TWI814821B

TWI814821B - Chip-cut die-bonding film and semiconductor device manufacturing method

Info

Publication number: TWI814821B
Application number: TW108115408A
Authority: TW
Inventors: 大西謙司; 宍戶雄一郎; 木村雄大; 杉村敏正; 福井章洋
Original assignee: 日商日東電工股份有限公司
Priority date: 2018-05-24
Filing date: 2019-05-03
Publication date: 2023-09-11
Also published as: KR20190134478A; TW202004887A; CN110527444A; KR102650499B1; JP7033004B2; JP2019204886A

Abstract

本發明之課題在於提供一種切晶黏晶膜(DDAF)及半導體裝置製造方法，該切晶黏晶膜具備作為適於抑制黏晶步驟中或其後晶片之浮升之黏晶膜的接著劑層。本發明之DDAF具備切晶帶10及接著劑層20。接著劑層20與切晶帶10之黏著劑層12密接。接著劑層20於第1剝離試驗(100℃、剝離角度180°、剝離速度30 mm/分鐘)中對Si平面表現出0.5～5 N/10 mm之180°剝離黏著力。並且，接著劑層20於第2剝離試驗(23℃、剝離角度180°、剝離速度30 mm/分鐘)中對Si平面表現出3～15 N/10 mm之180°剝離黏著力。本發明之半導體裝置製造方法包括對經過使用此種DDAF進行之擴張步驟所獲得之附接著劑層之半導體晶片的黏晶步驟。The subject of the present invention is to provide a die die attach film (DDAF) and a semiconductor device manufacturing method. The die die attach film is provided with an adhesive as a die adhesion film suitable for inhibiting the lifting of the wafer during or after the die attach step. layer. The DDAF of the present invention includes a dicing belt 10 and an adhesive layer 20 . The adhesive layer 20 is in close contact with the adhesive layer 12 of the dicing belt 10 . The adhesive layer 20 showed a 180° peeling adhesion force of 0.5 to 5 N/10 mm to the Si plane in the first peeling test (100°C, peeling angle 180°, peeling speed 30 mm/min). Furthermore, the adhesive layer 20 showed a 180° peeling adhesion force of 3 to 15 N/10 mm to the Si plane in the second peeling test (23°C, peeling angle 180°, peeling speed 30 mm/min). The semiconductor device manufacturing method of the present invention includes a die bonding step for a semiconductor wafer with an adhesive layer attached thereto obtained through an expansion step using such DDAF.

Description

切晶黏晶膜及半導體裝置製造方法Chip-cut die-bonding film and semiconductor device manufacturing method

本發明係關於一種可於半導體裝置之製造過程中使用之切晶黏晶膜及半導體裝置製造方法。 The present invention relates to a die-cut die-bonding film that can be used in the manufacturing process of semiconductor devices and a semiconductor device manufacturing method.

於半導體裝置之製造過程中，為了獲得伴隨有黏晶用晶片相當尺寸之接著膜之半導體晶片、即附黏晶膜之半導體晶片，有使用切晶黏晶膜之情形。切晶黏晶膜具有與作為加工對象之半導體晶圓對應之尺寸，例如具有包含基材及黏著劑層之切晶帶、及與該黏著劑層側可剝離地密接之黏晶膜(接著劑層)。 In the manufacturing process of semiconductor devices, in order to obtain a semiconductor wafer with an adhesive film having a size equivalent to that of a die-bonding wafer, that is, a semiconductor wafer with a die-bonding film, a die-cut die-bonding film is sometimes used. The die-cut die-attach film has a size corresponding to the semiconductor wafer to be processed, and has, for example, a die-cut tape including a base material and an adhesive layer, and a die-attach film (adhesive) that is releasably and tightly connected to the adhesive layer side. layer).

作為使用切晶黏晶膜獲得附黏晶膜之半導體晶片之一種方法，已知有一種經過用以擴張切晶黏晶膜或該切晶帶而將黏晶膜割斷之步驟之方法。於該方法中，首先，於切晶黏晶膜之黏晶膜上貼合半導體晶圓。該半導體晶圓例如為以之後可與黏晶膜一起被割斷而單片化為複數個半導體晶片之方式進行加工而成者。其次，為了以各者與半導體晶片密接之複數個黏晶膜小片自切晶帶上之黏晶膜產生之方式割斷該黏晶膜，使用擴張裝置擴張切晶黏晶膜或該切晶帶。於該擴張步驟中，於黏晶膜中之相當於割斷部位之部位，於黏晶膜上之半導體晶圓中亦產生割斷，於切晶黏晶膜或切晶帶上半導體晶圓單片化為複數個半導體晶片。其次，例如經過清洗步驟後，各半導體晶片與和其密接之晶片相當尺寸之黏晶膜一起自切晶帶之下側由拾取機構之銷構件頂起，然後自切晶帶上拾取。如此，獲得伴隨有黏晶膜之半導體晶片。該附黏晶膜之半導體晶片經由其黏晶膜，藉由黏晶而固著於安裝基板等被黏著體(黏晶步驟)。例如關於與以如上方式使用之切晶黏晶膜相關之技術，例如記載於下述專利文獻1~3中。 As a method of obtaining a semiconductor wafer with a die attach film using a die attach film, there is known a method of cutting the die attach film through a step of expanding the die attach film or the die die tape. In this method, first, the semiconductor wafer is bonded on the die-bonding film of the cut die-bonding film. For example, the semiconductor wafer is processed in such a manner that it can be cut together with the die-bonding film to be singulated into a plurality of semiconductor wafers. Secondly, in order to cut off the die-bonding film in a manner that the plurality of die-bonding film flakes each closely connected with the semiconductor chip are generated from the die-bonding film on the dicing tape, an expansion device is used to expand the die-cutting die-bonding film or the die-cutting tape. In this expansion step, a portion of the die bonding film equivalent to the cutting portion also causes a cut in the semiconductor wafer on the die bonding film, and the cutting die bonding film or the cutting die is cut. The semiconductor wafer is singulated into a plurality of semiconductor wafers on the wafer belt. Secondly, for example, after the cleaning step, each semiconductor wafer, together with the die-adhesive film of the same size as the wafer in close contact with it, is lifted up from the lower side of the dicing belt by the pin member of the pick-up mechanism, and then picked up from the dicing belt. In this way, a semiconductor wafer accompanied by a die attach film is obtained. The semiconductor chip with the die-adhesive film is fixed to an adherend such as a mounting substrate through die-adhesive film (die-adhesive step). For example, technologies related to the die-cut die-bonding film used in the above manner are described in the following Patent Documents 1 to 3, for example.

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Document]

[專利文獻1]日本專利特開2007-2173號公報 [Patent Document 1] Japanese Patent Application Publication No. 2007-2173

[專利文獻2]日本專利特開2010-177401號公報 [Patent Document 2] Japanese Patent Application Laid-Open No. 2010-177401

[專利文獻3]日本專利特開2012-23161號公報 [Patent Document 3] Japanese Patent Application Publication No. 2012-23161

半導體晶片有越薄則越容易翹曲之傾向。其原因在於半導體晶片包含熱膨脹率顯著不同之複數種材料，且經過各種熱製程而製作。例如於黏晶步驟中，半導體晶片越薄，則用以進行黏晶之高溫加熱過程中之半導體晶片中之由熱膨脹所引起之尺寸變化容易誘導該晶片於厚度方向上之彎曲變形。因此，越進行貼合於切晶黏晶膜之半導體晶圓之薄型化，則藉由上述方法所獲得之附黏晶膜之較薄之半導體晶片越容易於黏晶步驟中產生翹曲。 Semiconductor wafers tend to warp more easily as they become thinner. The reason is that semiconductor wafers contain multiple materials with significantly different thermal expansion rates and are produced through various thermal processes. For example, in the die bonding step, the thinner the semiconductor wafer is, the dimensional changes in the semiconductor wafer caused by thermal expansion during the high-temperature heating process used for die bonding will easily induce bending deformation of the wafer in the thickness direction. Therefore, the thinner the semiconductor wafer bonded to the die-cut die-attach film is, the easier it is for the thinner semiconductor wafer with the die-adhering film obtained by the above method to warp during the die-bonding step.

又，越進行貼合於切晶黏晶膜之半導體晶圓之薄型化，則藉由上述方法所獲得之附黏晶膜之較薄之半導體晶片即便於不產生翹曲而經過黏晶步驟之情形時，亦於該步驟後例如於降溫至室溫之狀態下，越容易產生翹曲。認為半導體晶片越薄，則黏晶步驟後之降溫過程中之半導體晶片中之由收縮所引起之尺寸變化越容易誘導該晶片於厚度方向上之彎曲變形。 Furthermore, as the semiconductor wafer adhered to the die-cut die-attach film becomes thinner, the thinner semiconductor wafer with the die-adhered film obtained by the above method can pass through the die-attachment step without warping. In this case, warping is more likely to occur after this step, for example, when the temperature is cooled to room temperature. It is believed that the thinner the semiconductor wafer, the easier it is for the dimensional changes caused by shrinkage in the semiconductor wafer to induce bending deformation in the thickness direction during the cooling process after the die bonding step.

本發明係基於如上所述之情況所想出者，其目的在於提供一種切晶黏晶膜，其具備作為適於抑制黏晶步驟中半導體晶片之浮升，並且適於抑制黏晶步驟後半導體晶片之浮升之黏晶膜的接著劑層。本發明之另一目的在於提供一種使用此種切晶黏晶膜之半導體裝置製造方法。 The present invention was conceived based on the above situation, and its object is to provide a die-cut die-bonding film that is suitable for suppressing the lifting of the semiconductor wafer during the die-bonding step, and is suitable for suppressing the lifting of the semiconductor wafer after the die-bonding step. The adhesive layer of the floating die-stick film on the wafer. Another object of the present invention is to provide a method for manufacturing a semiconductor device using such a die-cut die-bonding film.

根據本發明之第1態樣，提供一種切晶黏晶膜。該切晶黏晶膜具備切晶帶、及作為黏晶膜之接著劑層。切晶帶具有包含基材及黏著劑層之積層構造。接著劑層與切晶帶中之黏著劑層可剝離地密接。接著劑層對矽平面於100℃、剝離角度180°及剝離速度30mm/分鐘之條件下之剝離試驗(第1剝離試驗)中表現出0.5~5N/10mm之180°剝離黏著力。該黏著力較佳為0.6~3N/10mm，更佳為0.7~2N/10mm。與此同時，接著劑層對矽平面於23℃、剝離角度180°及剝離速度30mm/分鐘之條件下之剝離試驗(第2剝離試驗)中表現出3~15N/10mm之180°剝離黏著力。該黏著力較佳為3.2~12N/10mm，更佳為3.4~10N/10mm。該等黏著力係藉由對硬化前之接著劑層進行之剝離試驗所測定者。此種構成之切晶黏晶膜可用於在半導體裝置之製造過程中經過如上所述之擴張步驟而獲得附黏晶膜(接著劑層)之半導體晶片。 According to a first aspect of the present invention, a die-cut die-bonding film is provided. The die-cutting die-bonding film includes a die-cutting tape and an adhesive layer serving as the die-cutting die-bonding film. The dicing tape has a laminated structure including a base material and an adhesive layer. The adhesive layer and the adhesive layer in the dicing tape are releasably and tightly connected. The adhesive layer showed a 180° peeling adhesion of 0.5~5N/10mm in the peeling test (first peeling test) under the conditions of 100℃, peeling angle 180° and peeling speed 30mm/min. The adhesion force is preferably 0.6~3N/10mm, and more preferably 0.7~2N/10mm. At the same time, the adhesive layer showed a 180° peeling adhesion force of 3~15N/10mm in the peeling test (second peeling test) under the conditions of 23℃, peeling angle 180° and peeling speed 30mm/min. . The adhesion force is preferably 3.2~12N/10mm, more preferably 3.4~10N/10mm. The adhesion force is measured by peeling off the adhesive layer before hardening. The die-cut die-adhesive film with such a composition can be used to obtain a die-adherent film through the above-mentioned expansion steps in the manufacturing process of semiconductor devices (and then agent layer) semiconductor wafer.

如上所述，作為本切晶黏晶膜之黏晶膜之接著劑層於第1剝離試驗(100℃、剝離角度180°、剝離速度30mm/分鐘)中對矽平面表現出之180°剝離黏著力(第1黏著力)為0.5~5N/10mm，較佳為0.6~3N/10mm，更佳為0.7~2N/10mm。此種構成例如適於確保對經過如上所述之擴張步驟所獲得之附接著劑層之半導體晶片進行之黏晶步驟中高溫條件下之接著劑層及半導體晶片之間之接合狀態而抑制該半導體晶片之浮升。例如如以下述實施例及比較例表示。 As mentioned above, the adhesive layer of the die-bonding film used as the die-cut die-bonding film showed 180° peel adhesion to the silicon plane in the first peeling test (100°C, peeling angle 180°, peeling speed 30mm/min) The force (first adhesive force) is 0.5~5N/10mm, preferably 0.6~3N/10mm, more preferably 0.7~2N/10mm. This structure is suitable, for example, for ensuring the bonding state between the adhesive layer and the semiconductor wafer under high-temperature conditions in the bonding step of a semiconductor wafer with an adhesive layer attached obtained through the expansion step as described above, thereby suppressing the semiconductor wafer. The rise of the chip. For example, the following examples and comparative examples are shown.

如上所述，作為本切晶黏晶膜之黏晶膜之接著劑層於第2剝離試驗(23℃、剝離角度180°、剝離速度30mm/分鐘)中對矽平面表現出之180°剝離黏著力(第2黏著力)為3~15N/10mm，較佳為3.2~12N/10mm，更佳為3.4~10N/10mm。此種構成適於確保於黏晶步驟中維持接合狀態之接著劑層與半導體晶片之間切晶步驟後之降溫過程或室溫條件下之接合狀態，抑制該半導體晶片之浮升。例如如以下述實施例及比較例表示。 As mentioned above, the adhesive layer of the die-cut die-adhesive film used in this die-cut die-adhesive film showed 180° peel adhesion to the silicon plane in the second peel test (23°C, peel angle 180°, peel speed 30 mm/min) The force (second adhesive force) is 3~15N/10mm, preferably 3.2~12N/10mm, more preferably 3.4~10N/10mm. This structure is suitable for ensuring the bonding state between the adhesive layer and the semiconductor wafer that maintains the bonding state during the die bonding step during the cooling process after the chip cutting step or at room temperature, and suppresses the lifting of the semiconductor wafer. For example, the following examples and comparative examples are shown.

如上所述，本切晶黏晶膜適於抑制對附接著劑層之半導體晶片之黏晶步驟中半導體晶片之浮升，並且適於抑制黏晶步驟後半導體晶片之浮升。 As described above, the present die-cut die attaching film is suitable for suppressing the lifting of the semiconductor wafer during the step of attaching the semiconductor wafer to which the adhesive layer is attached, and is suitable for suppressing the lifting of the semiconductor wafer after the step of attaching the die.

本切晶黏晶膜之接著劑層對寬度10mm及厚度200μm之接著劑層試片於初始夾頭間距離22.5mm、頻率1Hz、動態應變0.005%及升溫速度 10℃/分鐘之條件下所測定之100℃下之損耗彈性模數較佳為0.1~0.5MPa，更佳為0.12~0.45MPa。此種構成係就於接著劑層中確保100℃及其附近之潤濕性而實現上述第1黏著力之方面而言較佳。關於損耗彈性模數，可基於使用動態黏彈性測定裝置進行之動態黏彈性測定而求出。 The adhesive layer of this die-cut die-bonding film is applied to an adhesive layer test piece with a width of 10mm and a thickness of 200μm. The distance between the initial chucks is 22.5mm, the frequency is 1Hz, the dynamic strain is 0.005%, and the temperature rise rate The loss elastic modulus at 100°C measured under the condition of 10°C/min is preferably 0.1~0.5MPa, more preferably 0.12~0.45MPa. This configuration is preferable in terms of ensuring wettability at and near 100° C. in the adhesive layer to achieve the above-mentioned first adhesive force. The loss elastic modulus can be determined based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device.

本切晶黏晶膜之接著劑層對寬度10mm及厚度200μm之接著劑層試片於初始夾頭間距離22.5mm、頻率1Hz、動態應變0.005%及升溫速度10℃/分鐘之條件下所測定之損耗正切於25~50℃之範圍內的最大值為0.8以上。此種構成係就於接著劑層中確保25~50℃及其附近之潤濕性而實現上述第2黏著力之方面而言較佳。關於損耗正切，可基於使用動態黏彈性測定裝置進行之動態黏彈性測定而求出。 The adhesive layer of this die-cut die-bonding film was measured on an adhesive layer specimen with a width of 10 mm and a thickness of 200 μm under the conditions of initial distance between chucks of 22.5 mm, frequency of 1 Hz, dynamic strain of 0.005%, and heating rate of 10°C/min. The maximum value of the loss tangent in the range of 25~50℃ is above 0.8. This structure is preferable in terms of ensuring the wettability at or near 25 to 50°C in the adhesive layer to achieve the above-mentioned second adhesive force. The loss tangent can be determined based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device.

本切晶黏晶膜之接著劑層對矽平面於-15℃、剝離角度180°及剝離速度30mm/分鐘之條件下之剝離試驗(第3剝離試驗)中表現出5N/10mm以上之180°剝離黏著力。該黏著力較佳為5.5N/10mm以上，更佳為6N/10mm以上。此種構成係就於例如於-10℃以下之低溫下實施伴隨有作為黏晶膜之接著劑層之割斷之上述擴張步驟之情形時，抑制該步驟中於接著劑層與半導體晶片之間產生剝離的方面而言較佳。 The adhesive layer of this die-cut die-bonding film exhibits a peeling test (third peeling test) of 5N/10mm or more on the silicon plane at -15°C, a peeling angle of 180°, and a peeling speed of 30mm/min. Peel adhesion. The adhesion force is preferably 5.5N/10mm or more, more preferably 6N/10mm or more. This structure is to suppress the occurrence between the adhesive layer and the semiconductor wafer during the step when the above-mentioned expansion step accompanied by cutting of the adhesive layer as the die bonding film is performed at a low temperature of -10°C or lower, for example. Better in terms of stripping.

本切晶黏晶膜之接著劑層於氮氣氛圍、基準重量溫度23℃±2℃及升溫速度10℃/分鐘之條件下之重量減少測定中之100℃下之重量減少率為0.8%以下，較佳為0.6%以下，更佳為0.5%以下。此種構成係就抑制起因於由來自接著劑層之釋氣成分所引起之半導體晶片之污染之接著劑層之密接力降低的觀點而言較佳。接著劑層之重量減少率例如可使用示差熱-熱重量同步測定裝置進行測定。 In the weight loss measurement of the adhesive layer of this die-cut die-bonding film under the conditions of nitrogen atmosphere, reference weight temperature of 23°C ± 2°C, and heating rate of 10°C/min, the weight loss rate at 100°C is less than 0.8%. It is preferably 0.6% or less, more preferably 0.5% or less. This structure suppresses the density of the adhesive layer that causes contamination of the semiconductor wafer caused by outgassing components from the adhesive layer. Better from the perspective of relay reduction. The weight reduction rate of the adhesive layer can be measured, for example, using a differential thermal-thermogravimetric simultaneous measuring device.

較佳為本切晶黏晶膜之接著劑層包含樹脂及填料，且該樹脂包含其50~95質量%之丙烯酸系樹脂及熱硬化性樹脂。此種構成係就例如100℃左右之高溫下之製程中之接著劑層對半導體晶片之潤濕性與保持力之平衡性的觀點而言較佳。丙烯酸系樹脂之重量平均分子量較佳為500000以下，更佳為480000以下，更佳為450000以下。此種構成係就例如100℃左右之高溫下之製程中之接著劑層對半導體晶片之潤濕性與保持力之平衡性的觀點而言較佳。又，接著劑層之填料含有比率較佳為35~60質量%，更佳為40~55質量%，更佳為42~52質量%。此種構成係就於接著劑層中謀求擴張步驟中之割斷性與凝聚力之平衡性之方面而言較佳。 Preferably, the adhesive layer of the die-cut die-bonding film includes resin and filler, and the resin includes 50 to 95% by mass of acrylic resin and thermosetting resin. This structure is preferable from the viewpoint of the balance between the wettability and the holding power of the adhesive layer on the semiconductor wafer during the process at a high temperature of about 100° C., for example. The weight average molecular weight of the acrylic resin is preferably 500,000 or less, more preferably 480,000 or less, still more preferably 450,000 or less. This structure is preferable from the viewpoint of the balance between the wettability and the holding power of the adhesive layer on the semiconductor wafer during the process at a high temperature of about 100° C., for example. Moreover, the filler content ratio of the adhesive layer is preferably 35 to 60 mass %, more preferably 40 to 55 mass %, and more preferably 42 to 52 mass %. This configuration is preferable in terms of achieving a balance between cutting properties and cohesion in the expansion step in the adhesive layer.

根據本發明之第2態樣，提供一種半導體裝置製造方法。該半導體裝置製造方法至少包括如下所述之第1步驟、第2步驟及第3步驟。於第1步驟中，於本發明之第1態樣之上述切晶黏晶膜中之接著劑層之側貼合能夠單片化為複數個半導體晶片之半導體晶圓、或包含複數個半導體晶片之半導體晶圓分割體。於第2步驟中，藉由擴張切晶黏晶膜，將接著劑層割斷而獲得附接著劑層之半導體晶片。第2步驟中之溫度條件較佳為0℃以下。於第3步驟(黏晶步驟)中，將附接著劑層之半導體晶片黏晶於基板或其他半導體晶片之上。使用本發明之第1態樣之上述切晶黏晶膜之此種構成之半導體裝置製造方法適於抑制黏晶步驟中半導體晶片之浮升，並且適於抑制黏晶步驟後半導體晶片之浮升。 According to a second aspect of the present invention, a semiconductor device manufacturing method is provided. The semiconductor device manufacturing method includes at least the following first step, second step and third step. In the first step, a semiconductor wafer that can be singulated into a plurality of semiconductor wafers or a semiconductor wafer containing a plurality of semiconductor wafers is bonded to the side of the adhesive layer in the die-cut die-attach film according to the first aspect of the present invention. Semiconductor wafer segmentation body. In the second step, the adhesive layer is cut by expanding the die-cutting die-bonding film to obtain a semiconductor wafer with the adhesive layer attached. The temperature condition in the second step is preferably below 0°C. In the third step (die bonding step), the semiconductor chip with the adhesive layer is adhered to the substrate or other semiconductor wafers. The manufacturing method of a semiconductor device using the above-described die-bonding film of the first aspect of the present invention is suitable for suppressing the lifting of the semiconductor wafer during the die-bonding step, and is suitable for suppressing the lifting of the semiconductor wafer after the die-bonding step. .

10:切晶帶 10: Cutting strip

11:基材 11:Substrate

12:黏著劑層 12: Adhesive layer

12a:黏著面 12a: Adhesive surface

20:接著劑層 20: Adhesive layer

21:接著劑層 21: Adhesive layer

30A:半導體晶圓 30A: Semiconductor wafer

30B:半導體晶圓分割體 30B: Semiconductor wafer split body

30C:半導體晶圓 30C: Semiconductor wafer

30a:分割槽 30a: Split slot

30b:改質區域 30b: Modified area

31:半導體晶片 31:Semiconductor wafer

41:環形框 41: Ring frame

42:保持器 42:Retainer

43:頂起構件 43: Jacking up components

44:銷構件 44: Pin member

45:吸附治具 45: Adsorption fixture

51:被黏著體 51: Adhered body

52:接合線 52:Joining wire

53:密封樹脂 53:Sealing resin

R:照射區域 R: irradiation area

T1:晶圓加工用膠帶 T1: Tape for wafer processing

T1a:黏著面 T1a: Adhesive surface

T2:晶圓加工用膠帶 T2: Tape for wafer processing

T2a:黏著面 T2a: Adhesive surface

T3:晶圓加工用膠帶 T3: Tape for wafer processing

T3a:黏著面 T3a: Adhesive surface

W:半導體晶圓 W: semiconductor wafer

Wa:第1面 Wa: Side 1

Wb:第2面 Wb: Side 2

X:切晶黏晶膜 X: Cut crystal adhesive film

圖1係本發明之一實施形態之切晶黏晶膜之剖面模式圖。 FIG. 1 is a schematic cross-sectional view of a die-cut die-bonding film according to an embodiment of the present invention.

圖2(a)~(d)係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法中之一部分步驟。 FIGS. 2(a) to 2(d) illustrate some steps of a semiconductor device manufacturing method using the die-cut die-bonding film shown in FIG. 1 .

圖3(a)、(b)係表示繼圖2所示之步驟之後之步驟。 Figures 3(a) and (b) show steps following the steps shown in Figure 2.

圖4(a)~(c)係表示繼圖3所示之步驟之後之步驟。 Figures 4(a) to (c) show steps following the steps shown in Figure 3.

圖5(a)、(b)係表示繼圖4所示之步驟之後之步驟。 Figures 5(a) and (b) show steps subsequent to the steps shown in Figure 4.

圖6係表示繼圖5所示之步驟之後之步驟。 Figure 6 shows steps subsequent to those shown in Figure 5.

圖7(a)~(c)係表示繼圖6所示之步驟之後之步驟。 Figures 7(a) to (c) show steps following the steps shown in Figure 6.

圖8係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法之變化例中的一部分步驟。 FIG. 8 shows some steps in a variation of the method of manufacturing a semiconductor device using the die-cut die-bonding film shown in FIG. 1 .

圖9(a)、(b)係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法之變化例中的一部分步驟。 9(a) and (b) show some steps in a modified example of a semiconductor device manufacturing method using the die-cut die-bonding film shown in FIG. 1.

圖10(a)~(c)係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法之變化例中的一部分步驟。 FIGS. 10(a) to 10(c) show some steps in a modified example of a semiconductor device manufacturing method using the die-cut die-bonding film shown in FIG. 1 .

圖11(a)、(b)係表示使用圖1所示之切晶黏晶膜之半導體裝置製造方法之變化例中的一部分步驟。 11(a) and (b) show some steps in a modified example of a semiconductor device manufacturing method using the die-cut die-bonding film shown in FIG. 1 .

圖1係本發明之一實施形態之切晶黏晶膜X之剖面模式圖。切晶黏晶膜X具有包含切晶帶10、及作為黏晶膜之接著劑層20之積層構造。切晶帶10具有包含基材11及黏著劑層12之積層構造。黏著劑層12係於接著劑層 20側具有黏著面12a。接著劑層20包含工件貼合用區域，且與切晶帶10之黏著劑層12或其黏著面12a可剝離地密接。切晶黏晶膜X可用於在製造半導體裝置時獲得附黏晶膜之半導體晶片之過程中的例如如下所述之擴張步驟。又，切晶黏晶膜X具有與半導體裝置之製造過程中之加工對象之半導體晶圓對應之尺寸的圓盤形狀，其直徑例如處於345~380mm之範圍內(12英吋晶圓對應型)、245~280mm之範圍內(8英吋晶圓對應型)、195~230mm之範圍內(6英吋晶圓對應型)或495~530mm之範圍內(18英吋晶圓對應型)。 FIG. 1 is a schematic cross-sectional view of a die-cut die-bonding film X according to an embodiment of the present invention. The die-cut die attach film X has a laminated structure including the die-cut tape 10 and the adhesive layer 20 as the die-attach film. The dicing belt 10 has a laminated structure including a base material 11 and an adhesive layer 12 . The adhesive layer 12 is attached to the adhesive layer The 20 side has an adhesive surface 12a. The adhesive layer 20 includes a workpiece bonding area, and is releasably tightly connected to the adhesive layer 12 of the dicing belt 10 or its adhesive surface 12a. The die-cut die-bonding film In addition, the die-cut die-attach film , within the range of 245~280mm (8-inch wafer compatible type), 195~230mm (6-inch wafer compatible type) or 495~530mm (18-inch wafer compatible type).

切晶帶10之基材11係於切晶帶10或切晶黏晶膜X中作為支持體發揮作用之元件。基材11例如為塑膠基材，作為該塑膠基材，可較佳地使用塑膠膜。作為該塑膠基材之構成材料，例如可列舉：聚氯乙烯、聚偏二氯乙烯、聚烯烴、聚酯、聚胺基甲酸酯、聚碳酸酯、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳香族聚醯胺、氟樹脂、纖維素系樹脂及聚矽氧樹脂。作為聚烯烴，例如可列舉：低密度聚乙烯、直鏈狀低密度聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚合聚丙烯、嵌段共聚合聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物(EVA)、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-丁烯共聚物及乙烯-己烯共聚物。作為聚酯，例如可列舉：聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯及聚對苯二甲酸丁二酯(PBT)。基材11可包含一種材料，亦可包含兩種以上之材料。基材11可具有單層構造，亦可具有多層構造。又，於基材11包含塑膠膜之情形時，可為無延伸膜，可為單軸延伸膜，亦可為雙軸延伸膜。於基材11上之黏著劑層12如下所述具有紫外線硬化性之情形時，較佳為基材11具有紫外線透過性。 The base material 11 of the dicing belt 10 is an element that functions as a support in the dicing belt 10 or the dicing adhesive film X. The base material 11 is, for example, a plastic base material. As the plastic base material, a plastic film can be preferably used. Examples of the constituent materials of the plastic base material include: polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, Polyetherimide, polyamide, fully aromatic polyamide, polyphenylene sulfide, aromatic polyamide, fluororesin, cellulose resin and polysiloxy resin. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, and block copolymerized polypropylene. , homopolypropylene, polybutylene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer materials, ethylene-butene copolymers and ethylene-hexene copolymers. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The base material 11 may include one kind of material, or may include two or more materials. The base material 11 may have a single-layer structure or a multi-layer structure. In addition, when the base material 11 includes a plastic film, it may be a non-stretched film, a uniaxially stretched film, or a double-stretched film. Shaft extension membrane. When the adhesive layer 12 on the base material 11 has ultraviolet curability as described below, it is preferable that the base material 11 has ultraviolet light transmittance.

於在切晶黏晶膜X之使用過程中例如藉由部分加熱使切晶帶10或基材11收縮之情形時，較佳為基材11具有熱收縮性。就於基材11中確保良好之熱收縮性之觀點而言，較佳為基材11包含乙烯-乙酸乙烯酯共聚物作為主成分。基材11之主成分設為於基材構成成分中占最大之質量比率之成分。又，於基材11包含塑膠膜之情形時，為了對切晶帶10或基材11實現各向同性之熱收縮性，基材11較佳為雙軸延伸膜。切晶帶10或基材11於加熱溫度100℃及加熱處理時間60秒之條件下進行之加熱處理試驗中之熱收縮率例如為2~30%。 In the case where the die cutting belt 10 or the base material 11 is shrunk during use of the die bonding film X, for example by partial heating, it is preferred that the base material 11 has heat shrinkability. From the viewpoint of ensuring good heat shrinkability in the base material 11, it is preferable that the base material 11 contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is the component that accounts for the largest mass ratio among the constituent components of the base material. In addition, when the base material 11 includes a plastic film, in order to achieve isotropic thermal shrinkage of the diced ribbon 10 or the base material 11, the base material 11 is preferably a biaxially stretched film. The heat shrinkage rate in the heat treatment test performed on the dicing belt 10 or the base material 11 under the conditions of a heating temperature of 100° C. and a heat treatment time of 60 seconds is, for example, 2 to 30%.

基材11中之黏著劑層12側之表面可實施用以提高與黏著劑層12之密接性之物理處理、化學處理或底塗處理。作為物理處理，例如可列舉：電暈處理、電漿處理、砂墊層加工處理、臭氧暴露處理、火焰暴露處理、高壓電擊暴露處理及離子化放射線處理。作為化學處理，例如可列舉鉻酸處理。用以提高密接性之該處理較佳為於基材11中之黏著劑層12側之整個表面實施。 The surface on the adhesive layer 12 side of the base material 11 may be subjected to physical treatment, chemical treatment or primer treatment to improve the adhesion with the adhesive layer 12 . Examples of physical treatments include corona treatment, plasma treatment, sand cushion treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, and ionizing radiation treatment. Examples of chemical treatment include chromic acid treatment. This treatment for improving adhesion is preferably performed on the entire surface of the base material 11 on the adhesive layer 12 side.

就確保用以使基材11作為切晶帶10或切晶黏晶膜X中之支持體發揮作用之強度之觀點而言，基材11之厚度較佳為40μm以上，更佳為50μm以上，更佳為55μm以上，更佳為60μm以上。又，就於切晶帶10或切晶黏晶膜X中實現適度之可撓性之觀點而言，基材11之厚度較佳為200μm以下，更佳為180μm以下，更佳為150μm以下。 From the viewpoint of ensuring the strength for the base material 11 to function as a support in the die tape 10 or the die bonding film X, the thickness of the base material 11 is preferably 40 μm or more, more preferably 50 μm or more. More preferably, it is 55 micrometer or more, More preferably, it is 60 micrometer or more. Furthermore, from the viewpoint of achieving appropriate flexibility in the die tape 10 or the die bonding film X, the thickness of the base material 11 is preferably 200 μm or more. below, more preferably 180 μm or less, more preferably 150 μm or less.

切晶帶10之黏著劑層12含有黏著劑。黏著劑可為黏著力能夠藉由放射線照射或加熱等來自外部之作用而有意地降低之黏著劑(黏著力降低型黏著劑)，亦可為黏著力幾乎或完全不會因來自外部之作用而降低之黏著劑(黏著力非降低型黏著劑)。關於使用黏著力降低型黏著劑抑或使用黏著力非降低型黏著劑作為黏著劑層12中之黏著劑，可根據使用切晶黏晶膜X而單片化之半導體晶片之單片化之方法或條件等切晶黏晶膜X之使用態樣適當地選擇。 The adhesive layer 12 of the dicing belt 10 contains adhesive. The adhesive may be an adhesive whose adhesive force can be intentionally reduced by external effects such as radiation or heating (adhesion-reducing adhesive), or an adhesive whose adhesive force is almost or completely not reduced by external effects. Reduced adhesive (non-reduced adhesive strength). Regarding the use of an adhesion-reducing adhesive or a non-adhesion-reducing adhesive as the adhesive in the adhesive layer 12, a method of singulating semiconductor wafers singulated using the die-cut die adhesive film X or The conditions are appropriately selected according to the usage pattern of the die-cut die-bonding film X.

於使用黏著力降低型黏著劑作為黏著劑層12中之黏著劑之情形時，於切晶黏晶膜X之使用過程中，可將黏著劑層12表現出相對較高之黏著力之狀態、及表現出相對較低之黏著力之狀態區分使用。例如於切晶黏晶膜X用於下述擴張步驟時，可為了抑制、防止接著劑層20自黏著劑層12之***或剝離而利用黏著劑層12之高黏著力狀態，另一方面，其後，於用以自切晶黏晶膜X之切晶帶10拾取附接著劑層之半導體晶片之下述拾取步驟中，為了容易自黏著劑層12拾取附接著劑層之半導體晶片而利用黏著劑層12之低黏著力狀態。 When an adhesive with reduced adhesion is used as the adhesive in the adhesive layer 12, the adhesive layer 12 can exhibit a relatively high adhesion state during the use of the die-cut die-bonding film X. And it is used to distinguish between states showing relatively low adhesion. For example, when the die-cut die-bonding film Thereafter, in the following pickup step for picking up the semiconductor wafer with the adhesive layer attached from the dicing tape 10 of the die bonding film X, it is used to easily pick up the semiconductor wafer with the adhesive layer attached from the adhesive layer 12 The adhesive layer 12 is in a low adhesion state.

作為此種黏著力降低型黏著劑，例如可列舉具有放射線硬化性之黏著劑(放射線硬化性黏著劑)或加熱發泡型黏著劑等。於本實施形態之黏著劑層12中，可使用一種黏著力降低型黏著劑，亦可使用兩種以上之黏著力降低型黏著劑。又，可黏著劑層12之整體由黏著力降低型黏著劑形成，亦可黏著劑層12之一部分由黏著力降低型黏著劑形成。例如於黏著劑層12具有單層構造之情形時，可黏著劑層12之整體由黏著力降低型黏著劑形成，亦可黏著劑層12中之特定之部位由黏著力降低型黏著劑形成，其他部位由黏著力非降低型黏著劑形成。又，於黏著劑層12具有積層構造之情形時，可形成積層構造之所有層均由黏著力降低型黏著劑形成，亦可積層構造中之一部分層由黏著力降低型黏著劑形成。 Examples of such adhesive force-reducing adhesives include radiation-curable adhesives (radiation-curable adhesives) and heat-foaming adhesives. In the adhesive layer 12 of this embodiment, one type of adhesive with reduced adhesive force can be used, or two or more types of adhesive with reduced adhesive force can be used. In addition, the entire adhesive layer 12 is formed of an adhesive force-reducing adhesive. A portion of the adhesive layer 12 is formed of an adhesive force-reducing adhesive. For example, when the adhesive layer 12 has a single-layer structure, the entire adhesive layer 12 may be formed of a reduced adhesive force adhesive, or a specific portion of the adhesive layer 12 may be formed of a reduced adhesive force adhesive. Other parts are formed by non-adhesion-reducing adhesive. In addition, when the adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of a reduced-adhesion adhesive, or some of the layers in the laminated structure may be formed of a reduced-adhesive adhesive.

作為黏著劑層12中之放射線硬化性黏著劑，例如可使用藉由電子束、紫外線、α射線、β射線、γ射線或X射線之照射進行硬化之類型之黏著劑，可尤佳地使用藉由紫外線照射進行硬化之類型之黏著劑(紫外線硬化性黏著劑)。 As the radiation-curable adhesive in the adhesive layer 12, for example, an adhesive that is cured by irradiation with electron beams, ultraviolet rays, alpha rays, beta rays, gamma rays or A type of adhesive that is hardened by ultraviolet irradiation (ultraviolet curable adhesive).

作為黏著劑層12中之放射線硬化性黏著劑，例如可列舉添加型放射線硬化性黏著劑，其含有作為丙烯酸系黏著劑之丙烯酸系聚合物等基礎聚合物、及具有放射線聚合性之碳-碳雙鍵等官能基之放射線聚合性之單體成分或低聚物成分。 Examples of the radiation-curable adhesive in the adhesive layer 12 include an additive-type radiation-curable adhesive, which contains a base polymer such as an acrylic polymer as an acrylic adhesive, and carbon-carbon having radiation polymerizability. Radiation polymerizable monomer component or oligomer component with functional groups such as double bonds.

上述丙烯酸系聚合物較佳為包含源自丙烯酸酯及/或甲基丙烯酸酯之單體單元作為以質量比率計最多之單體單元。以下，以「(甲基)丙烯酸」表示「丙烯酸」及/或「甲基丙烯酸」，以「(甲基)丙烯酸酯」表示「丙烯酸酯」及/或「甲基丙烯酸酯」。 The acrylic polymer preferably contains monomer units derived from acrylic acid ester and/or methacrylic acid ester as the largest number of monomer units in terms of mass ratio. Hereinafter, "(meth)acrylic acid" represents "acrylic acid" and/or "methacrylic acid", and "(meth)acrylate" represents "acrylate" and/or "methacrylate".

作為用以形成丙烯酸系聚合物之單體單元之(甲基)丙烯酸酯，例如可列舉：(甲基)丙烯酸烷基酯、(甲基)丙烯酸環烷基酯、(甲基)丙烯酸芳酯等含烴基(甲基)丙烯酸酯。作為(甲基)丙烯酸烷基酯，例如可列舉：(甲基)丙烯酸之甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯及二十烷基酯。作為(甲基)丙烯酸環烷基酯，例如可列舉(甲基)丙烯酸之環戊酯及環己酯。作為(甲基)丙烯酸芳酯，例如可列舉：(甲基)丙烯酸苯酯及(甲基)丙烯酸苄酯。作為用以形成丙烯酸系聚合物之單體單元之單體成分，可使用一種(甲基)丙烯酸酯，亦可使用兩種以上之(甲基)丙烯酸酯。作為用以形成丙烯酸系聚合物之單體單元之(甲基)丙烯酸酯，較佳為烷基之碳數為8以上之(甲基)丙烯酸烷基酯，更佳為丙烯酸2-乙基己酯及丙烯酸十二烷基酯。又，為了於黏著劑層12適當地表現由(甲基)丙烯酸酯所帶來之黏著性等基本特性，用以形成丙烯酸系聚合物之所有單體成分中之(甲基)丙烯酸酯之比率較佳為40質量%以上，更佳為60質量%以上。 As the (meth)acrylic acid ester used to form the monomer unit of the acrylic polymer, for example, Examples include hydrocarbon group-containing (meth)acrylates such as (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, and (meth)acrylic acid aryl ester. Examples of (meth)acrylic acid alkyl esters include: (meth)acrylic acid methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, second butyl ester, third butyl ester, Pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, ten Trialkyl esters, tetradecyl esters, cetyl esters, octadecyl esters and eicosyl esters. Examples of the (meth)acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl (meth)acrylic acid. Examples of the aryl (meth)acrylate include phenyl (meth)acrylate and benzyl (meth)acrylate. As the monomer component used to form the monomer unit of the acrylic polymer, one (meth)acrylic acid ester may be used, or two or more (meth)acrylic acid esters may be used. As the (meth)acrylate used to form the monomer unit of the acrylic polymer, a (meth)acrylic acid alkyl ester in which the carbon number of the alkyl group is 8 or more is preferred, and 2-ethylhexyl acrylate is more preferred. ester and dodecyl acrylate. In addition, in order to appropriately express the basic characteristics such as adhesiveness brought by (meth)acrylate in the adhesive layer 12, the ratio of (meth)acrylate among all the monomer components used to form the acrylic polymer is Preferably it is 40 mass % or more, More preferably, it is 60 mass % or more.

丙烯酸系聚合物為了將其凝聚力或耐熱性等進行改質，亦可包含源自可與(甲基)丙烯酸酯進行共聚合之其他單體之單體單元。作為此種其他單體，例如可列舉：含羧基單體、酸酐單體、含羥基單體、含縮水甘油基單體、含磺酸基單體、含磷酸基單體、丙烯醯胺及丙烯腈等含官能基單體。作為含羧基單體，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸2-羧基乙酯、(甲基)丙烯酸5-羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸及丁烯酸。作為酸酐單體，例如可列舉：順丁烯二酸酐及伊康酸酐。作為含羥基單體，例如可列舉：(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基十二烷基酯及(甲基)丙烯酸(4-羥基甲基環己基)甲酯。作為含縮水甘油基單體，例如可列舉：(甲基)丙烯酸縮水甘油酯及(甲基)丙烯酸甲基縮水甘油酯。作為含磺酸基單體，例如可列舉：苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸及(甲基)丙烯酸磺丙酯。作為含磷酸基單體，例如可列舉2-羥基乙基丙烯醯基磷酸酯。作為用於丙烯酸系聚合物之該其他共聚合性單體，可使用一種單體，亦可使用兩種以上之單體。 The acrylic polymer may contain monomer units derived from other monomers copolymerizable with (meth)acrylate in order to modify its cohesive force, heat resistance, etc. Examples of such other monomers include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and propylene. Nitriles and other functional group-containing monomers. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, 2-carboxyethyl (meth)acrylate, 5-carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and fumaric acid. enedioic acid and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. do Examples of hydroxyl-containing monomers include: (meth)acrylic acid 2-hydroxyethyl ester, (meth)acrylic acid 2-hydroxypropyl ester, (meth)acrylic acid 4-hydroxybutyl ester, (meth)acrylic acid 6- Hydroxyhexyl ester, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxydodecyl (meth)acrylate and (4-hydroxymethyl)acrylate cyclohexyl) methyl ester. Examples of the glycidyl group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, and (meth)acrylamidepropanesulfonate. acid and sulfopropyl (meth)acrylate. Examples of the phosphoric acid group-containing monomer include 2-hydroxyethylacrylyl phosphate. As the other copolymerizable monomer used for the acrylic polymer, one monomer may be used, or two or more monomers may be used.

丙烯酸系聚合物為了於其聚合物骨架中形成交聯結構，亦可包含源自可與(甲基)丙烯酸酯等單體成分進行共聚合之多官能性單體之單體單元。作為此種多官能性單體，例如可列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、聚(甲基)丙烯酸縮水甘油酯、聚酯(甲基)丙烯酸酯及(甲基)丙烯酸胺基甲酸酯。作為用於丙烯酸系聚合物之單體成分，可使用一種多官能性單體，亦可使用兩種以上之多官能性單體。為了於黏著劑層12適當地表現由(甲基)丙烯酸酯所帶來之黏著性等基本特性，用以形成丙烯酸系聚合物之所有單體成分中之多官能性單體之比率較佳為40質量%以下，更佳為30質量%以下。 In order to form a crosslinked structure in the polymer skeleton, the acrylic polymer may contain monomer units derived from a polyfunctional monomer copolymerizable with monomer components such as (meth)acrylate. Examples of such polyfunctional monomers include: hexylene glycol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate Acrylates, polyglycidyl(meth)acrylate, polyester(meth)acrylate and (meth)acrylic urethane. As the monomer component used in the acrylic polymer, one type of polyfunctional monomer can be used, or two or more types of polyfunctional monomers can be used. In order to appropriately express the basic characteristics such as adhesiveness brought by (meth)acrylate in the adhesive layer 12, the ratio of the polyfunctional monomer among all the monomer components used to form the acrylic polymer is preferably: 40% by mass or less, more preferably 30% by mass or less.

丙烯酸系聚合物可使用以形成其之原料單體進行聚合而獲得。作為聚合方法，例如可列舉：溶液聚合、乳化聚合、塊狀聚合及懸浮聚合。就使用切晶帶10或切晶黏晶膜X之半導體裝置製造方法中之高程度之清潔性的觀點而言，較佳為切晶帶10或切晶黏晶膜X中之黏著劑層12中之低分子量物質較少，丙烯酸系聚合物之重量平均分子量較佳為100000以上，更佳為200000~3000000。 The acrylic polymer can be obtained by polymerizing the raw material monomers used to form it. Examples of the polymerization method include solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. From the viewpoint of a high degree of cleanliness in a semiconductor device manufacturing method using the die tape 10 or the die die attach film X, the adhesive layer 12 in the die tape 10 or the die die attach film X is preferred. There are few low molecular weight substances in the polymer, and the weight average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000~3,000,000.

黏著劑層12或用以形成其之黏著劑為了提高丙烯酸系聚合物等基礎聚合物之重量平均分子量，例如可含有外部交聯劑。作為用以與丙烯酸系聚合物等基礎聚合物進行反應而形成交聯結構之外部交聯劑，可列舉：多異氰酸酯化合物、環氧化合物、多元醇化合物(多酚系化合物等)、氮丙啶化合物及三聚氰胺系交聯劑。黏著劑層12或用以形成其之黏著劑中之外部交聯劑之含量相對於基礎聚合物100質量份，較佳為6質量份以下，更佳為0.1~5質量份。 The adhesive layer 12 or the adhesive used to form it may contain, for example, an external cross-linking agent in order to increase the weight average molecular weight of a base polymer such as an acrylic polymer. Examples of the external crosslinking agent used to react with a base polymer such as an acrylic polymer to form a crosslinked structure include polyisocyanate compounds, epoxy compounds, polyol compounds (polyphenol compounds, etc.), and aziridines. Compounds and melamine cross-linking agents. The content of the external cross-linking agent in the adhesive layer 12 or the adhesive used to form it is preferably 6 parts by mass or less, and more preferably 0.1 to 5 parts by mass relative to 100 parts by mass of the base polymer.

作為用以形成放射線硬化性黏著劑之上述放射線聚合性單體成分，例如可列舉：(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯及1,4-丁二醇二(甲基)丙烯酸酯。作為用以形成放射線硬化性黏著劑之上述放射線聚合性低聚物成分，例如可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，適當為分子量100~30000左右者。放射線硬化性黏著劑中之放射線聚合性之單體成分或低聚物成分之總含量係於可藉由放射線照射而適當地降低所形成之黏著劑層12之黏著力之範圍內決定，相對於丙烯酸系聚合物等基礎聚合物100質量份，例如為5~500質量份，較佳為40~150質量份。又，作為添加型放射線硬化性黏著劑，例如亦可使用日本專利特開昭60-196956號公報中所揭示者。 Examples of the radiation-polymerizable monomer component used to form the radiation-curable adhesive include: (meth)acrylic urethane, trimethylolpropane tri(meth)acrylate, and pentaerythritol tri(meth)acrylate. hydroxy) acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate and 1,4-butanediol di(meth)acrylate . Examples of the radiation-polymerizable oligomer component used to form the radiation-curable adhesive include urethane-based, polyether-based, polyester-based, polycarbonate-based, polybutadiene-based, and the like. The oligomer preferably has a molecular weight of about 100 to 30,000. radiation The total content of the radiation-polymerizable monomer components or oligomer components in the line-hardening adhesive is determined within a range that can appropriately reduce the adhesive force of the adhesive layer 12 formed by radiation irradiation. 100 parts by mass of a base polymer such as an acrylic polymer, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass. In addition, as an additive type radiation curable adhesive, for example, what is disclosed in Japanese Patent Application Laid-Open No. Sho 60-196956 can also be used.

作為黏著劑層12中之放射線硬化性黏著劑，例如亦可列舉含有於聚合物側鏈、或聚合物主鏈中、聚合物主鏈末端具有放射線聚合性之碳-碳雙鍵等官能基之基礎聚合物之內在型放射線硬化性黏著劑。此種內在型放射線硬化性黏著劑係就抑制由形成之黏著劑層12內之低分子量成分之轉移所引起之黏著特性之無意之經時變化的方面而言較佳。 Examples of the radiation-curable adhesive in the adhesive layer 12 include functional groups such as carbon-carbon double bonds having radiation polymerizability in polymer side chains or in the polymer main chain. Radiation-hardening adhesive built into the base polymer. This type of intrinsic radiation-curable adhesive is preferable in terms of suppressing unintentional changes over time in adhesive properties caused by transfer of low molecular weight components in the formed adhesive layer 12 .

作為內在型放射線硬化性黏著劑中所含有之基礎聚合物，較佳為以丙烯酸系聚合物作為基本骨架。作為形成此種基本骨架之丙烯酸系聚合物，可採用作為添加型放射線硬化性黏著劑中之丙烯酸系聚合物於上文敍述者。作為對丙烯酸系聚合物導入放射線聚合性之碳-碳雙鍵之方法，例如可列舉如下方法：使包含具有特定之官能基(第1官能基)之單體之原料單體進行共聚合而獲得丙烯酸系聚合物後，於維持碳-碳雙鍵之放射線聚合性之狀態下使具有可於與第1官能基之間產生反應而進行鍵結之特定之官能基(第2官能基)及放射線聚合性碳-碳雙鍵之化合物與丙烯酸系聚合物進行縮合反應或加成反應。 As the base polymer contained in the intrinsic radiation-curable adhesive, an acrylic polymer is preferably used as the basic skeleton. As the acrylic polymer forming such a basic skeleton, the acrylic polymers described above as additive-type radiation curable adhesives can be used. An example of a method for introducing radiation-polymerizable carbon-carbon double bonds into an acrylic polymer is obtained by copolymerizing raw material monomers containing a monomer having a specific functional group (first functional group). After the acrylic polymer is formed, it has a specific functional group (second functional group) and radiation that can react with the first functional group to form a bond while maintaining the radiation polymerizability of the carbon-carbon double bond. Polymerizable carbon-carbon double bond compounds undergo condensation or addition reactions with acrylic polymers.

作為第1官能基與第2官能基之組合，例如可列舉：羧基與環氧基、環氧基與羧基、羧基與氮丙啶基、氮丙啶基與羧基、羥基與異氰酸基、異氰酸基與羥基。於該等組合中，就容易進行反應追蹤之觀點而言，較佳為羥基與異氰酸基之組合、或異氰酸基與羥基之組合。又，製作具有反應性較高之異氰酸基之聚合物由於技術難易度較高，故而就容易製作或獲取丙烯酸系聚合物之方面而言，更佳為丙烯酸系聚合物側之上述第1官能基為羥基且上述第2官能基為異氰酸基之情形。於此情形時，作為併有放射線聚合性碳-碳雙鍵、及作為第2官能基之異氰酸基之異氰酸酯化合物、即含有放射線聚合性之不飽和官能基之異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、異氰酸2-甲基丙烯醯氧基乙酯(MOI)及異氰酸間異丙烯基-α,α-二甲基苄酯。 Examples of the combination of the first functional group and the second functional group include: carboxyl group and epoxy group, Epoxy and carboxyl, carboxyl and aziridinyl, aziridinyl and carboxyl, hydroxyl and isocyanate, isocyanate and hydroxyl. Among these combinations, from the viewpoint of easy reaction tracking, a combination of a hydroxyl group and an isocyanate group, or a combination of an isocyanate group and a hydroxyl group is preferred. In addition, since it is technically difficult to produce a polymer having a highly reactive isocyanate group, in terms of easy production or acquisition of an acrylic polymer, the above-mentioned first step on the acrylic polymer side is more preferable. The functional group is a hydroxyl group and the second functional group is an isocyanato group. In this case, examples of isocyanate compounds having a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, an isocyanate compound containing a radiation-polymerizable unsaturated functional group, include: Methacrylyl isocyanate, 2-methacryloyloxyethyl isocyanate (MOI) and m-isopropenyl-α,α-dimethylbenzyl isocyanate.

黏著劑層12中之放射線硬化性黏著劑較佳為含有光聚合起始劑。作為光聚合起始劑，例如可列舉：α-酮醇系化合物、苯乙酮系化合物、安息香醚系化合物、縮酮系化合物、芳香族磺醯氯系化合物、光活性肟系化合物、二苯甲酮系化合物、9-氧硫

系化合物、樟腦醌、鹵化酮、醯基氧化膦及醯基磷酸酯。作為α-酮醇系化合物，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮及1-羥基環己基苯基酮。作為苯乙酮系化合物，例如可列舉：甲氧基苯乙酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮、2,2-二乙氧基苯乙酮及2-甲基-1-[4-(甲硫基)-苯基]-2-

啉基丙烷-1。作為安息香醚系化合物，例如可列舉：安息香***、安息香異丙醚及大茴香偶姻甲醚。作為縮酮系化合物，例如可列舉苄基二甲基縮酮。作為芳香族磺醯氯系化合物，例如可列舉2-萘磺醯氯。作為光活性肟系化合物，例如可列舉1-苯基-1,2-丙二酮- 2-(O-乙氧基羰基)肟。作為二苯甲酮系化合物，例如可列舉：二苯甲酮、苯甲醯基苯甲酸及3,3'-二甲基-4-甲氧基二苯甲酮。作為9-氧硫

系化合物，例如可列舉：9-氧硫

、2-氯9-氧硫

、2-甲基9-氧硫

、2,4-二甲基9-氧硫

、異丙基9-氧硫

、2,4-二氯9-氧硫

、2,4-二乙基9-氧硫

及2,4-二異丙基9-氧硫

。黏著劑層12中之放射線硬化性黏著劑中之光聚合起始劑之含量相對於丙烯酸系聚合物等基礎聚合物100質量份，例如為0.05~20質量份。 The radiation curable adhesive in the adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketool compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, and diphenyl Methyl ketone compounds, 9-oxysulfur

Compounds, camphorquinone, halogenated ketones, acylphosphine oxides and acylphosphates. Examples of α-ketool compounds include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one and α-hydroxy-α,α'-dimethylphenyl Ketone, 2-methyl-2-hydroxypropiophenone and 1-hydroxycyclohexylphenylketone. Examples of acetophenone-based compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethan-1-one, and 2,2-diethoxybenzene. Ethyl ketone and 2-methyl-1-[4-(methylthio)-phenyl]-2-

Phinopropane-1. Examples of benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of ketal compounds include benzyldimethyl ketal. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalene sulfonyl chloride. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime. Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. as 9-oxysulfide

Compounds, for example: 9-oxysulfur

, 2-Chloro-9-oxysulfide

, 2-Methyl 9-oxosulfide

, 2,4-dimethyl 9-oxosulfide

, isopropyl 9-oxosulfide

,2,4-Dichloro9-oxosulfide

, 2,4-diethyl 9-oxosulfide

and 2,4-diisopropyl 9-oxosulfide

. The content of the photopolymerization initiator in the radiation curable adhesive in the adhesive layer 12 is, for example, 0.05 to 20 parts by mass relative to 100 parts by mass of a base polymer such as an acrylic polymer.

黏著劑層12中之上述加熱發泡型黏著劑係含有藉由加熱進行發泡或膨脹之成分之黏著劑。作為藉由加熱進行發泡或膨脹之成分，例如可列舉發泡劑及熱膨脹性微球。 The above-mentioned heat-foaming adhesive in the adhesive layer 12 is an adhesive containing a component that foams or expands by heating. Examples of components that foam or expand by heating include foaming agents and heat-expandable microspheres.

作為加熱發泡型黏著劑用發泡劑，可列舉各種無機系發泡劑及有機系發泡劑。作為無機系發泡劑，例如可列舉：碳酸銨、碳酸氫銨、碳酸氫鈉、亞硝酸銨、氫化硼鈉及疊氮類。作為有機系發泡劑，例如可列舉：三氯單氟甲烷或二氯單氟甲烷等氯氟化烷烴；偶氮二異丁腈或偶氮二甲醯胺、偶氮二甲酸鋇等偶氮系化合物；對甲苯磺醯肼或二苯基碸-3,3'-二磺醯肼、4,4'-氧基雙(苯磺醯肼)、烯丙基雙(磺醯肼)等肼系化合物；ρ-甲苯基磺醯基胺脲或4,4'-氧基雙(苯磺醯基胺脲)等胺脲系化合物；5-

啉基-1,2,3,4-噻***等***系化合物；以及N,N'-二亞硝基五亞甲基四胺或N,N'-二甲基-N,N'-二亞硝基對苯二甲醯胺等N-亞硝基系化合物。 Examples of the foaming agent for heat-foaming adhesives include various inorganic foaming agents and organic foaming agents. Examples of inorganic foaming agents include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium boron hydride, and azides. Examples of organic foaming agents include chlorofluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo bisisobutyronitrile, azodimethamide, barium azodicarboxylate, and the like; Compounds; p-toluenesulfonyl hydrazine or diphenyl-3,3'-disulfonyl hydrazine, 4,4'-oxybis(benzenesulfonylhydrazine), allylbis(sulfonylhydrazine) and other hydrazines Aminocarbazide compounds; ρ-tolylsulfonylcarbazone or 4,4'-oxybis(benzenesulfonylcarbazone) and other aminocarbazide compounds; 5-

Triazole compounds such as pholinyl-1,2,3,4-thitriazole; and N,N'-dinitrosopentamethylenetetramine or N,N'-dimethyl-N,N' - N-nitroso compounds such as dinitrosoterephthalamide.

作為加熱發泡型黏著劑用熱膨脹性微球，例如可列舉將藉由加熱容易氣體化而膨脹之物質封入至殼內而成之構成之微球。作為藉由加熱容易氣體化而膨脹之物質，例如可列舉：異丁烷、丙烷及戊烷。將藉由加熱容易氣體化而膨脹之物質利用凝聚法或界面聚合法等封入至殼形成物質內，藉此可製作熱膨脹性微球。作為殼形成物質，可使用表現出熱熔融性之物質、或可藉由封入物質之熱膨脹之作用而破裂之物質。作為此種物質，例如可列舉：偏二氯乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯醇縮丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏二氯乙烯及聚碸。 Examples of heat-expandable microspheres for use in heat-expandable adhesives include those that can be heated by heating a container. Microspheres are composed of substances that easily gasify and expand and are sealed into the shell. Examples of substances that are easily gasified and expanded by heating include isobutane, propane, and pentane. Thermal-expandable microspheres can be produced by sealing a substance that is easily gasified and expanded by heating into a shell-forming substance using a condensation method or an interfacial polymerization method. As the shell-forming material, a material that exhibits thermal meltability or a material that can be ruptured by thermal expansion of a sealed material can be used. Examples of such substances include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethylmethacrylate, polyacrylonitrile, polyvinylidene chloride and polystyrene.

作為黏著劑層12中之上述黏著力非降低型黏著劑，例如可列舉感壓性黏著劑。作為該感壓性黏著劑，例如可使用以丙烯酸系聚合物作為基礎聚合物之丙烯酸系黏著劑或橡膠系黏著劑。於黏著劑層12含有丙烯酸系黏著劑作為感壓性黏著劑之情形時，作為該丙烯酸系黏著劑之基礎聚合物之丙烯酸系聚合物較佳為包含源自(甲基)丙烯酸酯之單體單元作為以質量比率計最多之單體單元。作為此種丙烯酸系聚合物，例如可列舉關於放射線硬化性黏著劑於上文敍述之丙烯酸系聚合物。 Examples of the non-reducing adhesive force in the adhesive layer 12 include pressure-sensitive adhesives. As the pressure-sensitive adhesive, for example, an acrylic adhesive or a rubber adhesive using an acrylic polymer as a base polymer can be used. When the adhesive layer 12 contains an acrylic adhesive as a pressure-sensitive adhesive, the acrylic polymer serving as the base polymer of the acrylic adhesive preferably contains a monomer derived from (meth)acrylate. unit as the largest monomer unit in terms of mass ratio. Examples of such acrylic polymers include the acrylic polymers described above regarding the radiation curable adhesive.

作為黏著劑層12中之感壓性黏著劑，亦可利用藉由放射線照射使關於黏著力降低型黏著劑於上文敍述之放射線硬化性黏著劑硬化而成之形態之黏著劑。此種經硬化之放射線硬化類型之黏著劑即便黏著力因放射線照射而降低，根據聚合物成分之含量，亦可表現出由該聚合物成分所帶來之黏著性，於特定之使用態樣中可發揮能夠用於黏著保持被黏著體之黏著力。 As the pressure-sensitive adhesive in the adhesive layer 12, it is also possible to use an adhesive in a form in which the adhesive force-reducing adhesive is hardened by radiation irradiation, such as the radiation-hardening adhesive described above. Even if the adhesive force of this hardened radiation-hardened type adhesive is reduced due to radiation exposure, depending on the content of the polymer component, it can still exhibit the adhesiveness brought by the polymer component in a specific use situation. It can exert adhesive force that can be used to adhere and hold adherends.

於本實施形態之黏著劑層12中，可使用一種黏著力非降低型黏著劑，亦可使用兩種以上之黏著力非降低型黏著劑。又，可黏著劑層12之整體由黏著力非降低型黏著劑形成，亦可黏著劑層12之一部分由黏著力非降低型黏著劑形成。例如於黏著劑層12具有單層構造之情形時，可黏著劑層12之整體由黏著力非降低型黏著劑形成，亦可黏著劑層12中之特定之部位由黏著力非降低型黏著劑形成，其他部位由黏著力降低型黏著劑形成。又，於黏著劑層12具有積層構造之情形時，可形成積層構造之所有層均由黏著力非降低型黏著劑形成，亦可積層構造中之一部分層由黏著力非降低型黏著劑形成。 In the adhesive layer 12 of this embodiment, one type of non-reducing adhesive force may be used, or two or more types of non-reducing adhesive force may be used. In addition, the entire adhesive layer 12 may be formed of a non-reducing adhesive force adhesive, or a part of the adhesive layer 12 may be formed of a non-reducing adhesive force adhesive. For example, when the adhesive layer 12 has a single-layer structure, the entire adhesive layer 12 may be formed of a non-reducing adhesive force, or a specific portion of the adhesive layer 12 may be formed of a non-reducing adhesive force. Formed, other parts are formed by adhesives with reduced adhesion. In addition, when the adhesive layer 12 has a laminated structure, all the layers forming the laminated structure may be formed of a non-reducing adhesive force, or some of the layers in the laminated structure may be formed of a non-reducing adhesive force.

於黏著劑層12或用以形成其之黏著劑中，除上述各成分以外，亦可含有交聯促進劑、或黏著賦予劑、防老化劑、著色劑等。作為著色劑，可列舉顏料及染料。又，著色劑亦可為受到放射線照射而著色之化合物。作為此種化合物，例如可列舉隱色染料。 In addition to the above-mentioned components, the adhesive layer 12 or the adhesive used to form it may also contain a cross-linking accelerator, an adhesion-imparting agent, an anti-aging agent, a colorant, etc. Examples of colorants include pigments and dyes. Furthermore, the coloring agent may be a compound that is colored by irradiation with radiation. Examples of such compounds include leuco dyes.

黏著劑層12之厚度較佳為1~50μm，更佳為2~30μm，更佳為5~25μm。此種構成例如就於黏著劑層12包含放射線硬化性黏著劑之情形時保持該黏著劑層12於放射線硬化前後對接著劑層20之黏著力之平衡性的方面而言較佳。 The thickness of the adhesive layer 12 is preferably 1~50 μm, more preferably 2~30 μm, and more preferably 5~25 μm. This configuration is preferable, for example, in the case where the adhesive layer 12 contains a radiation curable adhesive, in order to maintain the balance of the adhesive force of the adhesive layer 12 to the adhesive layer 20 before and after radiation curing.

切晶黏晶膜X之接著劑層20具有作為表現出黏晶用熱硬化性之接著劑之功能。於本實施形態中，用以形成接著劑層20之接著劑可具有包含熱硬化性樹脂、及例如作為黏合劑成分之熱塑性樹脂之組成，亦可具有包含伴隨有能夠與硬化劑進行反應而產生鍵之熱硬化性官能基之熱塑性樹脂之組成。於用以形成接著劑層20之接著劑具有包含伴隨有熱硬化性官能基之熱塑性樹脂之組成的情形時，該接著劑無須進而包含熱硬化性樹脂(環氧樹脂等)。此種接著劑層20可具有單層構造，亦可具有多層構造。 The adhesive layer 20 of the die-cut die-bonding film X functions as an adhesive exhibiting thermosetting properties for die-bonding. In this embodiment, the adhesive used to form the adhesive layer 20 may have a composition including a thermosetting resin and, for example, a thermoplastic resin as an adhesive component, or may have a composition including a thermosetting resin. A composition of thermoplastic resin with thermosetting functional groups capable of reacting with a hardener to create bonds. When the adhesive used to form the adhesive layer 20 has a composition including a thermoplastic resin with a thermosetting functional group, the adhesive does not need to further include a thermosetting resin (epoxy resin, etc.). The adhesive layer 20 may have a single-layer structure or a multi-layer structure.

於接著劑層20包含熱硬化性樹脂以及熱塑性樹脂之情形時，作為該熱硬化性樹脂，例如可列舉：環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂及熱硬化性聚醯亞胺樹脂。作為接著劑層20中之熱硬化性樹脂，可使用一種樹脂，亦可使用兩種以上之樹脂。出於有可能會成為黏晶對象之半導體晶片之腐蝕原因之離子性雜質等之含量較少之傾向的原因，作為接著劑層20中所包含之熱硬化性樹脂，較佳為環氧樹脂。又，作為環氧樹脂之硬化劑，較佳為酚樹脂。 When the adhesive layer 20 contains a thermosetting resin and a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, and polyurethane resin. Ester resin, polysilicone resin and thermosetting polyimide resin. As the thermosetting resin in the adhesive layer 20, one resin may be used, or two or more resins may be used. The thermosetting resin contained in the adhesive layer 20 is preferably an epoxy resin because the content of ionic impurities and the like that may cause corrosion of the semiconductor wafer to be bonded tends to be small. In addition, as the hardener of the epoxy resin, a phenol resin is preferred.

作為環氧樹脂，例如可列舉：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型、乙內醯脲型、異氰尿酸三縮水甘油酯型及縮水甘油胺型環氧樹脂。酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型環氧樹脂及四酚基乙烷型環氧樹脂由於富有與作為硬化劑之酚樹脂之反應性且耐熱性優異，故而作為接著劑層20中所包含之環氧樹脂較佳。 Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and fluorine type. Type, phenol novolak type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenolethane type, hydantoin type, triglycidyl isocyanurate type and glycidylamine type epoxy resin . Novolak-type epoxy resin, biphenyl-type epoxy resin, trihydroxyphenylmethane-type epoxy resin, and tetraphenolethane-type epoxy resin are highly reactive with phenol resin as a hardener and have excellent heat resistance. Therefore, the epoxy resin contained in the adhesive layer 20 is preferred.

作為能夠作為環氧樹脂之硬化劑發揮作用之酚樹脂，例如可列舉：酚醛清漆型酚樹脂、可溶酚醛型酚樹脂及聚對羥基苯乙烯等聚羥基苯乙烯。作為酚醛清漆型酚樹脂，例如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂及壬基苯酚酚醛清漆樹脂。作為能夠作為環氧樹脂之硬化劑發揮作用之酚樹脂，可使用一種酚樹脂，亦可使用兩種以上之酚樹脂。苯酚酚醛清漆樹脂或苯酚芳烷基樹脂係於用作作為黏晶用接著劑之環氧樹脂之硬化劑之情形時，有可提昇該接著劑之連接可靠性之傾向，故而作為接著劑層20中所包含之環氧樹脂之硬化劑較佳。 Examples of phenol resins that can function as a hardener for epoxy resins include novolac-type phenol resins, resol-type phenol resins, and polyhydroxystyrenes such as polyparahydroxystyrene. ene. Examples of the novolak-type phenol resin include phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, and nonylphenol novolac resin. As the phenol resin that functions as a hardener for the epoxy resin, one type of phenol resin may be used, or two or more types of phenol resins may be used. When phenol novolak resin or phenol aralkyl resin is used as a hardener for an epoxy resin used as a die-bonding adhesive, it tends to improve the connection reliability of the adhesive, so it is used as the adhesive layer 20 The hardener contained in the epoxy resin is better.

就充分地進行接著劑層20中之環氧樹脂與酚樹脂之硬化反應之觀點而言，酚樹脂係以相對於環氧樹脂成分中之環氧基1當量，該酚樹脂中之羥基成為較佳為0.5~2.0當量、更佳為0.8~1.2當量之量包含於接著劑層20中。 From the viewpoint of fully advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin is used in an amount of 1 equivalent of the epoxy group in the epoxy resin component, and the hydroxyl group in the phenol resin becomes a relatively large amount. Preferably, it is contained in the adhesive layer 20 in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

就於接著劑層20中適當地表現作為熱硬化型接著劑之功能之觀點而言，接著劑層20中之熱硬化性樹脂之含有比率較佳為5~60質量%，更佳為10~50質量%。 From the viewpoint of appropriately expressing the function of the thermosetting adhesive in the adhesive layer 20 , the content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, and more preferably 10 to 60% by mass. 50% by mass.

作為接著劑層20中所包含之熱塑性樹脂，例如可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET或PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂及氟樹脂。作為接著劑層20中之熱塑性樹脂，可使用一種樹脂，亦可使用兩種以上之樹脂。作為接著劑層20中所包含之熱塑性樹脂，出於為了使離子性雜質較少且耐熱性較高而容易確保由接著劑層20所帶來之接合可靠性之原因，較佳為丙烯酸系樹脂。 Examples of the thermoplastic resin contained in the adhesive layer 20 include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene -Acrylate copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET or PBT and other saturated polyester resins, polyamide imine resins and fluorine resins. As the thermoplastic resin in the adhesive layer 20, one kind of resin can be used, or two kinds of resin can be used. The above resin. The thermoplastic resin contained in the adhesive layer 20 is preferably an acrylic resin in order to have less ionic impurities and to have high heat resistance and to easily ensure joint reliability by the adhesive layer 20 . .

作為熱塑性樹脂包含於接著劑層20中之丙烯酸系樹脂較佳為包含源自(甲基)丙烯酸酯之單體單元作為以質量比率計最多之主要之單體單元。作為此種(甲基)丙烯酸酯，例如可使用與關於作為黏著劑層12形成用放射線硬化性黏著劑之一成分之丙烯酸系聚合物於上文敍述者相同之(甲基)丙烯酸酯。作為熱塑性樹脂包含於接著劑層20中之丙烯酸系樹脂亦可包含源自能夠與(甲基)丙烯酸酯進行共聚合之其他單體之單體單元。作為此種其他單體成分，例如可列舉：含羧基單體、酸酐單體、含羥基單體、含縮水甘油基單體、含磺酸基單體、含磷酸基單體、丙烯醯胺、丙烯腈等含官能基單體、或各種多官能性單體，具體而言，可使用與關於作為黏著劑層12形成用放射線硬化性黏著劑之一成分之丙烯酸系聚合物作為能夠與(甲基)丙烯酸酯進行共聚合之其他單體於上文敍述者相同者。就於接著劑層20中實現較高之凝聚力之觀點而言，接著劑層20中所包含之該丙烯酸系樹脂較佳為(甲基)丙烯酸酯、含羧基單體、含氮原子單體及多官能性單體之共聚物。作為該(甲基)丙烯酸酯，較佳為烷基之碳數為4以下之(甲基)丙烯酸烷基酯。作為該多官能性單體，較佳為聚縮水甘油基系多官能單體。接著劑層20中所包含之該丙烯酸系樹脂更佳為丙烯酸乙酯、丙烯酸丁酯、丙烯酸、丙烯腈及聚(甲基)丙烯酸縮水甘油酯之共聚物。 The acrylic resin contained in the adhesive layer 20 as the thermoplastic resin preferably contains monomer units derived from (meth)acrylic acid ester as the main monomer unit that is the largest in terms of mass ratio. As such a (meth)acrylate, for example, the same (meth)acrylate as described above regarding the acrylic polymer that is a component of the radiation-curable adhesive for forming the adhesive layer 12 can be used. The acrylic resin included in the adhesive layer 20 as the thermoplastic resin may also include monomer units derived from other monomers that can be copolymerized with (meth)acrylate. Examples of such other monomer components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, Functional group-containing monomers such as acrylonitrile, or various polyfunctional monomers. Specifically, an acrylic polymer that is a component of the radiation-curable adhesive for forming the adhesive layer 12 can be used. The other monomers used for copolymerization with acrylic acid ester are the same as those described above. From the viewpoint of achieving higher cohesion in the adhesive layer 20, the acrylic resin contained in the adhesive layer 20 is preferably (meth)acrylate, a carboxyl group-containing monomer, a nitrogen atom-containing monomer, and Copolymer of multifunctional monomers. The (meth)acrylate is preferably an alkyl (meth)acrylate in which the number of carbon atoms in the alkyl group is 4 or less. As the polyfunctional monomer, a polyglycidyl-based polyfunctional monomer is preferred. The acrylic resin contained in the adhesive layer 20 is preferably a copolymer of ethyl acrylate, butyl acrylate, acrylic acid, acrylonitrile and polyglycidyl (meth)acrylate.

接著劑層20中之例如為丙烯酸系樹脂之熱塑性樹脂之重量平均分子量較佳為500000以下，更佳為480000以下，更佳為450000以下。同分子量例如為50000以上。 The weight average molecules of the thermoplastic resin, such as acrylic resin, in the adhesive layer 20 The quantity is preferably 500,000 or less, more preferably 480,000 or less, and more preferably 450,000 or less. The same molecular weight is, for example, 50,000 or more.

接著劑層20中之例如為丙烯酸系樹脂之熱塑性樹脂之玻璃轉移溫度較佳為25~50℃。關於聚合物之玻璃轉移溫度，可使用基於下述Fox之式所求出之玻璃轉移溫度(理論值)。Fox之式係聚合物之玻璃轉移溫度Tg與該聚合物中之每一構成單體之均聚物之玻璃轉移溫度Tgi的關係式。於下述Fox之式中，Tg表示聚合物之玻璃轉移溫度(℃)，Wi表示構成該聚合物之單體i之重量分率，Tgi表示單體i之均聚物之玻璃轉移溫度(℃)。關於均聚物之玻璃轉移溫度，可使用文獻值。例如於「新高分子文庫7塗料用合成樹脂入門」(北岡協三著，高分子刊行會，1995年)或「丙烯酸酯目錄(1997年度版)」(三菱麗陽股份有限公司)中列舉出各種均聚物之玻璃轉移溫度。另一方面，關於單體之均聚物之玻璃轉移溫度，亦可藉由日本專利特開2007-51271號公報中具體記載之方法求出。 The glass transition temperature of the thermoplastic resin, such as acrylic resin, in the adhesive layer 20 is preferably 25°C to 50°C. Regarding the glass transition temperature of the polymer, the glass transition temperature (theoretical value) calculated based on the following Fox equation can be used. Fox's formula is the relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of the homopolymer of each constituent monomer in the polymer. In the following Fox formula, Tg represents the glass transition temperature (℃) of the polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (℃) of the homopolymer of the monomer i ). Regarding the glass transition temperature of homopolymers, literature values can be used. For example, "New Polymer Library 7 Introduction to Synthetic Resins for Coatings" (written by Kyozo Kyozo, Polymer Press, 1995) or "Acrylic Ester Catalog (1997 Edition)" (Mitsubishi Rayon Co., Ltd.) lists various Glass transition temperature of homopolymer. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be determined by the method specifically described in Japanese Patent Application Laid-Open No. 2007-51271.

Fox之式 1/(273+Tg)=Σ[Wi/(273+Tgi)] Fox's formula 1/(273+Tg)=Σ[Wi/(273+Tgi)]

於接著劑層20包含伴隨有熱硬化性官能基之熱塑性樹脂之情形時，作為該熱塑性樹脂，例如可使用含熱硬化性官能基丙烯酸系樹脂。用以形成該含熱硬化性官能基丙烯酸系樹脂之丙烯酸系樹脂較佳為包含源自(甲基)丙烯酸酯之單體單元作為以質量比率計最多之主要之單體單元。作為此種(甲基)丙烯酸酯，例如可使用與關於作為黏著劑層12形成用放射線硬化性黏著劑之一成分之丙烯酸系聚合物於上文敍述者相同之(甲基)丙烯酸酯。另一方面，作為用以形成含熱硬化性官能基丙烯酸系樹脂之熱硬化性官能基，例如可列舉：縮水甘油基、羧基、羥基及異氰酸基。於該等中，可較佳地使用縮水甘油基及羧基。即，作為含熱硬化性官能基丙烯酸系樹脂，可較佳地使用含縮水甘油基丙烯酸系樹脂或含羧基丙烯酸系樹脂。又，作為含熱硬化性官能基丙烯酸系樹脂之硬化劑，例如可使用作為有設為黏著劑層12形成用放射線硬化性黏著劑之一成分之情形之外部交聯劑於上文敍述者。於含熱硬化性官能基丙烯酸系樹脂中之熱硬化性官能基為縮水甘油基之情形時，作為硬化劑，可較佳地使用多酚系化合物，例如可使用上述各種酚樹脂。 When the adhesive layer 20 contains a thermoplastic resin with a thermosetting functional group, for example, an acrylic resin containing a thermosetting functional group can be used as the thermoplastic resin. The acrylic resin used to form the thermosetting functional group-containing acrylic resin preferably contains monomer units derived from (meth)acrylic acid esters as the largest major monomer unit in terms of mass ratio. As such a (meth)acrylate, for example, the same (meth)acrylic acid as described above regarding the acrylic polymer that is a component of the radiation curable adhesive for forming the adhesive layer 12 can be used. ester. On the other hand, examples of the thermosetting functional group used to form the thermosetting functional group-containing acrylic resin include a glycidyl group, a carboxyl group, a hydroxyl group and an isocyanate group. Among these, glycidyl group and carboxyl group can be preferably used. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin or a carboxyl group-containing acrylic resin can be preferably used. In addition, as the curing agent of the thermosetting functional group-containing acrylic resin, for example, the external crosslinking agent described above as a component of the radiation curable adhesive for forming the adhesive layer 12 can be used. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, a polyphenol compound can be preferably used as the hardener. For example, the above-mentioned various phenol resins can be used.

接著劑層20中之如上所述之高分子量成分或樹脂成分之含有比率較佳為50~95質量%，更佳為50~90質量%。 The content ratio of the above-mentioned high molecular weight component or resin component in the adhesive layer 20 is preferably 50 to 95 mass %, more preferably 50 to 90 mass %.

接著劑層20亦可含有填料。藉由於接著劑層20中調配填料，可調整接著劑層20之拉伸儲存彈性模數等彈性模數、或導電性、導熱性等物性。作為填料，可列舉無機填料及有機填料，尤佳為無機填料。作為無機填料，例如可列舉：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶質二氧化矽、非晶質二氧化矽，除此以外，亦可列舉：鋁、金、銀、銅、鎳等金屬單質、或合金、非晶質碳黑、石墨。填料可具有球狀、針狀、片狀等各種形狀。於接著劑層20中，可調配一種填料，亦可調配兩種以上之填料。接著劑層20之填料含有比率較佳為35~60質量%，更佳為40~55質量%，更佳為42~52質量%。 The adhesive layer 20 may also contain fillers. By blending fillers into the adhesive layer 20, the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20, or physical properties such as electrical conductivity and thermal conductivity can be adjusted. Examples of fillers include inorganic fillers and organic fillers, and inorganic fillers are particularly preferred. Examples of the inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitride In addition to boron, crystalline silica, and amorphous silica, metal elements such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon black, and graphite are also included. Fillers can have various shapes such as spheres, needles, and flakes. In the adhesive layer 20, one type of filler, or two or more fillers can be prepared. The filler content ratio of the adhesive layer 20 is preferably 35 to 60 mass %, more preferably 40 to 55 mass %, and more preferably 42 to 52 mass %.

接著劑層20含有填料之情形時之該填料之平均粒徑較佳為0.005~10μm，更佳為0.005~1μm。該填料之平均粒徑為0.005μm以上之構成係就於接著劑層20中實現對半導體晶圓等被黏著體之較高之潤濕性或接著性的方面而言較佳。該填料之平均粒徑為10μm以下之構成係就於接著劑層20中享有充分之填料添加效果，並且確保耐熱性之方面而言較佳。填料之平均粒徑例如可使用光度式粒度分佈計(商品名「LA-910」，堀場製作所股份有限公司製造)求出。 When the adhesive layer 20 contains a filler, the average particle size of the filler is preferably 0.005~10 μm, more preferably 0.005~1 μm. The filler having an average particle diameter of 0.005 μm or more is preferable in terms of achieving high wettability or adhesion to adherends such as semiconductor wafers in the adhesive layer 20 . The filler having an average particle diameter of 10 μm or less is preferable in terms of achieving a sufficient filler addition effect in the adhesive layer 20 and ensuring heat resistance. The average particle diameter of the filler can be determined, for example, using a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba Manufacturing Co., Ltd.).

接著劑層20亦可視需要包含一種或兩種以上之其他成分。作為該其他成分，例如可列舉：阻燃劑、矽烷偶合劑及離子捕捉劑。作為阻燃劑，例如可列舉：三氧化二銻、五氧化二銻及溴化環氧樹脂。作為矽烷偶合劑，例如可列舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷及γ-縮水甘油氧基丙基甲基二乙氧基矽烷。作為離子捕捉劑，例如可列舉：鋁碳酸鎂類、氫氧化鉍、含水氧化銻(例如東亞合成股份有限公司製造之「IXE-300」)、特定結構之磷酸鋯(例如東亞合成股份有限公司製造之「IXE-100」)、矽酸鎂(例如協和化學工業股份有限公司製造之「KYOWAAD 600」)及矽酸鋁(例如協和化學工業股份有限公司製造之「KYOWAAD 700」)。能夠於與金屬離子之間形成錯合物之化合物亦可用作離子捕捉劑。作為此種化合物，例如可列舉：***系化合物、四唑系化合物及聯吡啶系化合物。於該等中，就於與金屬離子之間形成之錯合物之穩定性的觀點而言，較佳為***系化合物。作為此種***系化合物，例如可列舉：1,2,3-苯并***、1-{N,N-雙(2-乙基己基)胺基甲基}苯并***、羧基苯并***、2-(2-羥基-5-甲基苯基)苯并***、2-(2-羥基-3,5-二-第三丁基苯基)-5-氯苯并***、2-(2-羥基-3-第三丁基-5-甲基苯基)-5-氯苯并***、2-(2-羥基-3,5-二-第三戊基苯基)苯并***、2-(2-羥基-5-第三辛基苯基)苯并***、6-(2-苯并***基)-4-第三辛基-6'-第三丁基-4'-甲基-2,2'-亞甲基雙酚、1-(2,3-二羥基丙基)苯并***、1-(1,2-二羧基二乙基)苯并***、1-(2-乙基己基胺基甲基)苯并***、2,4-二-第三戊基-6-{(H-苯并***-1-基)甲基}苯酚、2-(2-羥基-5-第三丁基苯基)-2H-苯并***、辛基-3-[3-第三丁基-4-羥基-5-(5-氯-2H-苯并***-2-基)苯基]丙酸酯、2-乙基己基-3-[3-第三丁基-4-羥基-5-(5-氯-2H-苯并***-2-基)苯基]丙酸酯、2-(2H-苯并***-2-基)-6-(1-甲基-1-苯基乙基)-4-(1,1,3,3-四甲基丁基)苯酚、2-(2H-苯并***-2-基)-4-第三丁基苯酚、2-(2-羥基-5-甲基苯基)苯并***、2-(2-羥基-5-第三辛基苯基)-苯并***、2-(3-第三丁基-2-羥基-5-甲基苯基)-5-氯苯并***、2-(2-羥基-3,5-二-第三戊基苯基)苯并***、2-(2-羥基-3,5-二-第三丁基苯基)-5-氯-苯并***、2-[2-羥基-3,5-二(1,1-二甲基苄基)苯基]-2H-苯并***、2,2'-亞甲基雙[6-(2H-苯并***-2-基]-4-(1,1,3,3-四甲基丁基)苯酚]、2-[2-羥基-3,5-雙(α,α-二甲基苄基)苯基]-2H-苯并***及甲基-3-[3-(2H-苯并***-2-基)-5-第三丁基-4-羥基苯基]丙酸酯。又，對苯二酚化合物、或羥基蒽醌化合物、多酚化合物等特定之含羥基化合物亦可用作離子捕捉劑。作為此種含羥基化合物，例如可列舉：1,2-苯二酚、茜素、蒽絳酚、單寧、沒食子酸、沒食子酸甲酯及鄰苯三酚。 The adhesive layer 20 may also contain one or more other components if necessary. Examples of the other components include flame retardants, silane coupling agents, and ion trapping agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethane. diethoxysilane. Examples of the ion trapping agent include aluminum magnesium carbonates, bismuth hydroxide, hydrous antimony oxide (such as "IXE-300" manufactured by Toagosei Co., Ltd.), and zirconium phosphate with a specific structure (such as "IXE-300" manufactured by Toagosei Co., Ltd.). "IXE-100"), magnesium silicate (such as "KYOWAAD 600" manufactured by Kyowa Chemical Industry Co., Ltd.) and aluminum silicate (such as "KYOWAAD 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds capable of forming complexes with metal ions can also be used as ion trapping agents. Examples of such compounds include triazole compounds, tetrazole compounds, and bipyridine compounds. Among these, from the viewpoint of the stability of the complex formed with the metal ion, a triazole compound is preferred. Examples of such triazole compounds include: 1,2,3-benzotriazole, 1-{N,N-bis(2-ethylhexyl)aminomethyl Base}benzotriazole, carboxybenzotriazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-tertiary butylbenzene base)-5-chlorobenzotriazole, 2-(2-hydroxy-3-tert-butyl-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3, 5-Di-tertiary pentylphenyl)benzotriazole, 2-(2-hydroxy-5-tertiary octylphenyl)benzotriazole, 6-(2-benzotriazolyl)-4 -Tertioctyl-6'-tert-butyl-4'-methyl-2,2'-methylenebisphenol, 1-(2,3-dihydroxypropyl)benzotriazole, 1- (1,2-dicarboxydiethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-tertiary pentyl-6-{(H -Benzotriazole-1-yl)methyl}phenol, 2-(2-hydroxy-5-tert-butylphenyl)-2H-benzotriazole, octyl-3-[3-tert-butyl Hydroxy-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-ethylhexyl-3-[3-tert-butyl-4-hydroxy -5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionate, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1 -Phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-tert-butylphenol, 2 -(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-tert-octylphenyl)-benzotriazole, 2-(3-tert-butyl- 2-Hydroxy-5-methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-tert-pentylphenyl)benzotriazole, 2-(2- Hydroxy-3,5-di-tert-butylphenyl)-5-chloro-benzotriazole, 2-[2-hydroxy-3,5-di(1,1-dimethylbenzyl)phenyl ]-2H-benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl]-4-(1,1,3,3-tetramethylbutyl )phenol], 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzotriazole and methyl-3-[3-(2H-benzene Triazol-2-yl)-5-tert-butyl-4-hydroxyphenyl]propionate. Also, specific hydroxyl-containing compounds such as hydroquinone compounds, hydroxyanthraquinone compounds, and polyphenol compounds. It can be used as an ion trapping agent. Examples of such hydroxyl-containing compounds include: 1,2-benzenediol, alizarin, anthracinol, tannin, gallic acid, methyl gallate and o-phenylene glycol. triphenols.

接著劑層20之厚度例如處於1~200μm之範圍，較佳為5~40μm。接著劑層20之厚度為5μm以上之構成係就貼附有框架構件之接著劑層20追隨於該框架構件表面之微細凹凸而發揮良好之框架構件貼合性的方面而言較佳。接著劑層20之厚度為40μm以下之構成係就於接著劑層20中確保下述擴張步驟中之割斷性之方面而言較佳。 The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm, preferably 5 to 40 μm. The thickness of the adhesive layer 20 is preferably 5 μm or more in that the adhesive layer 20 to which the frame member is attached follows the fine irregularities on the surface of the frame member and exhibits good adhesion to the frame member. A configuration in which the thickness of the adhesive layer 20 is 40 μm or less is preferable in order to ensure the cutability of the adhesive layer 20 in the following expansion step.

接著劑層20對矽平面於100℃、剝離角度180°及剝離速度30mm/分鐘之條件下之剝離試驗(第1剝離試驗)中表現出0.5~5N/10mm之180°剝離黏著力。該黏著力較佳為0.6~3N/10mm，更佳為0.7~2N/10mm。與此同時，接著劑層20對矽平面於23℃、剝離角度180°及剝離速度30mm/分鐘之條件下之剝離試驗(第2剝離試驗)中表現出3~15N/10mm之180°剝離黏著力。該黏著力較佳為3.2~12N/10mm，更佳為3.4~10N/10mm。該等黏著力係藉由對硬化前之接著劑層20進行之剝離試驗所測定者。又，接著劑層20對矽平面於-15℃、剝離角度180°及剝離速度30mm/分鐘之條件下之剝離試驗(第3剝離試驗)中表現出5N/10mm以上之180°剝離黏著力。該黏著力較佳為5.5N/10mm以上，更佳為6N/10mm以上。 The adhesive layer 20 showed a 180° peeling adhesion of 0.5~5N/10mm to the silicon plane in a peeling test (first peeling test) under the conditions of 100°C, a peeling angle of 180° and a peeling speed of 30mm/minute. The adhesion force is preferably 0.6~3N/10mm, and more preferably 0.7~2N/10mm. At the same time, the adhesive layer 20 showed a 180° peeling adhesion of 3~15N/10mm in a peeling test (second peeling test) under the conditions of 23°C, peeling angle 180° and peeling speed 30mm/min. force. The adhesion force is preferably 3.2~12N/10mm, more preferably 3.4~10N/10mm. The adhesion force is measured by performing a peeling test on the adhesive layer 20 before hardening. In addition, the adhesive layer 20 showed a 180° peeling adhesion of more than 5N/10mm to the silicon plane in a peeling test (third peeling test) under the conditions of -15°C, a peeling angle of 180°, and a peeling speed of 30mm/min. The adhesion force is preferably 5.5N/10mm or more, more preferably 6N/10mm or more.

接著劑層20對寬度10mm及厚度200μm之接著劑層20試片於初始夾頭間距離22.5mm、頻率1Hz、動態應變0.005%及升溫速度10℃/分鐘之條件下所測定之100℃下之損耗彈性模數較佳為0.1~0.5MPa，更佳為0.12~0.45MPa。又，接著劑層20對寬度10mm及厚度200μm之接著劑層20試片於初始夾頭間距離22.5mm、頻率1Hz、動態應變0.005%及升溫速度10℃/分鐘之條件下所測定之損耗正切於25~50℃之範圍內的最大值為0.8以上。關於該等損耗彈性模數及損耗正切，可基於使用動態黏彈性測定裝置進行之動態黏彈性測定而求出。 Adhesive layer 20 measured at 100°C on a test piece of adhesive layer 20 with a width of 10 mm and a thickness of 200 μm under the conditions of initial distance between clamps of 22.5 mm, frequency of 1 Hz, dynamic strain of 0.005%, and heating rate of 10°C/min. The loss elastic modulus is preferably 0.1~0.5MPa, more preferably 0.12~0.45MPa. In addition, the loss tangent of the adhesive layer 20 on the adhesive layer 20 test piece with a width of 10 mm and a thickness of 200 μm was measured under the conditions of an initial inter-chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10°C/min. Maximum in the range of 25~50℃ The value is above 0.8. The loss elastic modulus and loss tangent can be obtained based on dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device.

接著劑層20於氮氣氛圍、基準重量溫度23℃±2℃及升溫速度10℃/分鐘之條件下之重量減少測定中之100℃下之重量減少率為0.8%以下，較佳為0.6%以下，更佳為0.5%以下。緩衝材料片材之重量減少率可使用示差熱-熱重量同步測定裝置進行測定。作為同裝置，例如可列舉Rigaku股份有限公司製造之示差熱天平Thermo plus TG8120。 In the weight loss measurement of the adhesive layer 20 under the conditions of a nitrogen atmosphere, a reference weight temperature of 23°C ± 2°C, and a heating rate of 10°C/min, the weight reduction rate at 100°C is 0.8% or less, preferably 0.6% or less. , preferably less than 0.5%. The weight reduction rate of the cushioning material sheet can be measured using a differential thermal-thermogravimetric simultaneous measuring device. An example of the same device is a differential thermal balance Thermo plus TG8120 manufactured by Rigaku Co., Ltd.

具有如上所述之構成之切晶黏晶膜X例如可以如下方式製作。 The die-cut die-bonding film X having the above-mentioned structure can be produced in the following manner, for example.

關於切晶黏晶膜X之切晶帶10，可藉由於所準備之基材11上設置黏著劑層12而製作。例如樹脂製基材11可藉由壓延製膜法、有機溶劑中之澆鑄法、密閉系統中之吹脹擠出法、T型模頭擠出法、共擠出法、乾式層壓法等製膜方法製作。黏著劑層12可藉由製備黏著劑層12形成用黏著劑組合物後，於基材11上或特定之隔離膜(即剝離襯墊)上塗佈該黏著劑組合物形成黏著劑組合物層，視需要使該黏著劑組合物層進行乾燥而形成。作為黏著劑組合物之塗佈方法，例如可列舉：輥式塗敷、網版塗敷及凹版塗敷。用於黏著劑組合物層之乾燥之溫度例如為80~150℃，時間例如為0.5~5分鐘。於黏著劑層12形成於隔離膜上之情形時，將伴隨有該隔離膜之黏著劑層12貼合於基材11。以如上方式，可製作切晶帶10。 The die cutting tape 10 of the die die bonding film X can be produced by providing the adhesive layer 12 on the prepared base material 11 . For example, the resin substrate 11 can be produced by calendering, casting in organic solvents, blow extrusion in a closed system, T-die extrusion, co-extrusion, dry lamination, etc. Membrane method. The adhesive layer 12 can be formed by preparing an adhesive composition for forming the adhesive layer 12 and then coating the adhesive composition on the base material 11 or a specific release film (ie, a release liner). , if necessary, the adhesive composition layer is dried to form. Examples of coating methods for the adhesive composition include roll coating, screen coating, and gravure coating. The temperature used for drying the adhesive composition layer is, for example, 80 to 150°C, and the time is, for example, 0.5 to 5 minutes. When the adhesive layer 12 is formed on the isolation film, the adhesive layer 12 accompanied by the isolation film is bonded to the base material 11 . In the above manner, the crystal cutting belt 10 can be produced.

關於切晶黏晶膜X之接著劑層20，可藉由製備接著劑層20形成用接著劑組合物後，於特定之隔離膜上塗佈該接著劑組合物形成接著劑組合物層，視需要使該接著劑組合物層進行乾燥而製作。作為接著劑組合物之塗佈方法，例如可列舉：輥式塗敷、網版塗敷及凹版塗敷。用於接著劑組合物層之乾燥之溫度例如為70~160℃，時間例如為1~5分鐘。 Regarding the adhesive layer 20 of the die-cut die-bonding film X, the adhesive layer 20 can be prepared to form an adhesive layer. After applying the adhesive composition, the adhesive composition is applied on a specific isolation film to form an adhesive composition layer, and the adhesive composition layer is dried if necessary to produce the adhesive composition. Examples of coating methods for the adhesive composition include roll coating, screen coating, and gravure coating. The temperature used for drying the adhesive composition layer is, for example, 70 to 160°C, and the time is, for example, 1 to 5 minutes.

於切晶黏晶膜X之製作中，其次，於切晶帶10之黏著劑層12側例如壓接貼合接著劑層20。貼合溫度例如為30~50℃，較佳為35~45℃。貼合壓力(線壓)例如為0.1~20kgf/cm，較佳為1~10kgf/cm。於黏著劑層12為如上所述之放射線硬化性黏著劑層之情形時，於貼合接著劑層20後對黏著劑層12照射紫外線等放射線時，例如自基材11之側對黏著劑層12進行放射線照射，其照射量例如為50~500mJ/cm²。切晶黏晶膜X中進行作為黏著劑層12之黏著力降低措施之照射之區域(照射區域R)通常為黏著劑層12中之接著劑層20貼合區域內之除其周緣部以外的區域。 During the production of the die-cutting die-bonding film X, secondly, the adhesive layer 20 is bonded to the adhesive layer 12 side of the die-cutting tape 10, for example, by pressure bonding. The bonding temperature is, for example, 30 to 50°C, preferably 35 to 45°C. The bonding pressure (line pressure) is, for example, 0.1 to 20 kgf/cm, preferably 1 to 10 kgf/cm. When the adhesive layer 12 is a radiation-curable adhesive layer as described above, when the adhesive layer 12 is irradiated with radiation such as ultraviolet rays after the adhesive layer 20 is bonded, for example, the adhesive layer is irradiated from the side of the base material 11 12. Perform radiation irradiation, and the irradiation dose is, for example, 50 to 500 mJ/cm ² . The area of the die-cut die-bonding film X that is irradiated as a measure to reduce the adhesive force of the adhesive layer 12 (irradiation area R) is usually the area within the bonding area of the adhesive layer 20 in the adhesive layer 12 except for its peripheral portion. area.

例如可以如上方式製作圖1所示之切晶黏晶膜X。 For example, the die-cut die-bonding film X shown in Figure 1 can be produced in the above manner.

如上所述，作為切晶黏晶膜X之黏晶膜之接著劑層20於第1剝離試驗(100℃、剝離角度180°、剝離速度30mm/分鐘)中對矽平面表現出之180°剝離黏著力(第1黏著力)為0.5~5N/10mm，較佳為0.6~3N/10mm，更佳為0.7~2N/10mm。此種構成適於確保對經過如下所述之擴張步驟所獲得之附接著劑層之半導體晶片之黏晶步驟中高溫條件下之接著劑層20與半導體晶片之間之接合狀態而抑制該半導體晶片之浮升。 As described above, the adhesive layer 20 of the die-bonding film used as the die-cut die-bonding film The adhesive force (first adhesive force) is 0.5~5N/10mm, preferably 0.6~3N/10mm, more preferably 0.7~2N/10mm. This structure is suitable for ensuring the bonding state between the adhesive layer 20 and the semiconductor wafer under high-temperature conditions in the bonding step of the semiconductor wafer with the adhesive layer attached obtained through the expansion step described below, and suppressing the semiconductor wafer. The rise.

如上所述，作為切晶黏晶膜X之黏晶膜之接著劑層20於第2剝離試驗(23℃、剝離角度180°、剝離速度30mm/分鐘)中對矽平面表現出之180°剝離黏著力(第2黏著力)為3~15N/10mm，較佳為3.2~12N/10mm，更佳為3.4~10N/10mm。此種構成適於確保於黏晶步驟中維持接合狀態之接著劑層20與半導體晶片之間切晶步驟後之降溫過程或室溫條件下之接合狀態，抑制該半導體晶片之浮升。 As described above, the adhesive layer 20 of the die-bonding film used as the die-cut die-bonding film The adhesive force (second adhesive force) is 3~15N/10mm, preferably 3.2~12N/10mm, more preferably 3.4~10N/10mm. This structure is suitable for ensuring the bonding state between the adhesive layer 20 and the semiconductor wafer that maintains the bonding state during the die bonding step during the cooling process after the dicing step or under room temperature conditions, and suppresses the lifting of the semiconductor wafer.

如此，切晶黏晶膜X適於抑制對附接著劑層20之半導體晶片之黏晶步驟中半導體晶片之浮升，並且適於抑制黏晶步驟後半導體晶片之浮升。 In this way, the die die attach film

如上所述，切晶黏晶膜X之接著劑層20對寬度10mm及厚度200μm之接著劑層20試片於初始夾頭間距離22.5mm、頻率1Hz、動態應變0.005%及升溫速度10℃/分鐘之條件下所測定之100℃下之損耗彈性模數較佳為0.1~0.5MPa，更佳為0.12~0.45MPa。此種構成係就於接著劑層20中確保100℃及其附近之潤濕性而實現上述第1黏著力之方面而言較佳。 As mentioned above, the adhesive layer 20 of the die-cut die-bonding film The loss elastic modulus at 100°C measured under conditions of 0.1 to 0.5 MPa is preferably 0.12 to 0.45 MPa, and is more preferably 0.12 to 0.45 MPa. This configuration is preferable in terms of ensuring wettability at and near 100° C. in the adhesive layer 20 to achieve the above-mentioned first adhesive force.

如上所述，切晶黏晶膜X之接著劑層20對寬度10mm及厚度200μm之接著劑層20試片於初始夾頭間距離22.5mm、頻率1Hz、動態應變0.005%及升溫速度10℃/分鐘之條件下所測定之損耗正切於25~50℃之範圍內的最大值為0.8以上。此種構成係就於接著劑層20中確保25~50℃及其附近之潤濕性而實現上述第2黏著力之方面而言較佳。 As mentioned above, the adhesive layer 20 of the die-cut die-bonding film The maximum value of the loss tangent measured under the condition of 25~50℃ is above 0.8. This structure is preferable in order to ensure the wettability of 25-50 degreeC and its vicinity in the adhesive layer 20, and to realize the said 2nd adhesive force.

切晶黏晶膜X之接著劑層20於第3剝離試驗(-15℃、剝離角度180°、剝離速度30mm/分鐘)中對矽平面表現出之180°剝離黏著力為5N/10mm以上，較佳為5.5N/10mm以上，更佳為6N/10mm以上。此種構成係就於例如於-10℃以下之低溫下實施伴隨有作為黏晶膜之接著劑層20之割斷之上述擴張步驟之情形時，抑制該步驟中於接著劑層20與半導體晶片之間產生剝離的方面而言較佳。 In the third peel test (-15°C, peeling angle 180°, peeling speed 30mm/min), the adhesive layer 20 of the die-cut die-bonding film Preferably it is 5.5N/10mm or more, more preferably 6N/10mm or more. This configuration is to suppress the contact between the adhesive layer 20 and the semiconductor wafer during the step when the above-mentioned expansion step accompanied by cutting the adhesive layer 20 as the die bonding film is performed at a low temperature of -10° C. or lower, for example. It is better in terms of causing peeling.

如上所述，切晶黏晶膜X之接著劑層20於氮氣氛圍、基準重量溫度23℃±2℃及升溫速度10℃/分鐘之條件下之重量減少測定中之100℃下之重量減少率為0.8%以下，較佳為0.6%以下，更佳為0.5%以下。此種構成係就抑制起因於由來自接著劑層20之釋氣成分所引起之半導體晶片之污染之接著劑層20之密接力降低的觀點而言較佳。 As mentioned above, the weight loss rate at 100°C in the weight loss measurement of the adhesive layer 20 of the die-cut die-bonding film It is 0.8% or less, preferably 0.6% or less, more preferably 0.5% or less. This configuration is preferable from the viewpoint of suppressing a decrease in the adhesive force of the adhesive layer 20 due to contamination of the semiconductor wafer caused by outgassing components from the adhesive layer 20 .

較佳為切晶黏晶膜X之接著劑層20包含樹脂及填料，且該樹脂包含其50~95質量%之丙烯酸系樹脂及熱硬化性樹脂。此種構成係就例如100℃左右之高溫下之製程中之接著劑層20對半導體晶片之潤濕性與保持力之平衡性的觀點而言較佳。該丙烯酸系樹脂之重量平均分子量較佳為500000以下，更佳為480000以下，更佳為450000以下。此種構成係就例如100℃左右之高溫下之製程中之接著劑層20對半導體晶片之潤濕性與保持力之平衡性的觀點而言較佳。又，接著劑層20之填料含有比率較佳為35~60質量%，更佳為40~55質量%，更佳為42~52質量%。此種構成係就於接著劑層20中謀求擴張步驟中之割斷性與凝聚力之平衡性之方面而言較佳。 Preferably, the adhesive layer 20 of the die-cut die-bonding film X includes resin and filler, and the resin includes 50 to 95% by mass of acrylic resin and thermosetting resin. This structure is preferable from the viewpoint of the balance between the wettability and the holding power of the adhesive layer 20 to the semiconductor wafer during the process at a high temperature of about 100° C., for example. The weight average molecular weight of the acrylic resin is preferably 500,000 or less, more preferably 480,000 or less, still more preferably 450,000 or less. This structure is preferable from the viewpoint of the balance between the wettability and the holding power of the adhesive layer 20 to the semiconductor wafer during the process at a high temperature of about 100° C., for example. In addition, the filler content ratio of the adhesive layer 20 is preferably 35 to 60 mass %, more preferably 40 to 55 mass %, and more preferably 42 to 52 mass %. This configuration is preferable in terms of achieving a balance between cutting properties and cohesive force in the expansion step of the adhesive layer 20 .

圖2至圖7係表示本發明之一實施形態之半導體裝置製造方法。 2 to 7 illustrate a semiconductor device manufacturing method according to an embodiment of the present invention.

於本半導體裝置製造方法中，首先，如圖2(a)及圖2(b)所示，於半導體晶圓W形成分割槽30a(分割槽形成步驟)。半導體晶圓W具有第1面Wa及第2面Wb。於半導體晶圓W中之第1面Wa之側已製作有各種半導體元件(省略圖示)，且該半導體元件所需之配線構造等(省略圖示)已形成於第1面Wa上。於本步驟中，於具有黏著面T1a之晶圓加工用膠帶T1貼合於半導體晶圓W之第2面Wb側後，於半導體晶圓W保持於晶圓加工用膠帶T1之狀態下，於半導體晶圓W之第1面Wa側使用切晶裝置等之旋轉刀片形成特定深度之分割槽30a。分割槽30a係用以使半導體晶圓W分離為半導體晶片單位之空隙(於圖2至圖4中，以粗實線模式性地表示分割槽30a)。 In this semiconductor device manufacturing method, first, as shown in FIGS. 2(a) and 2(b) , dividing trenches 30a are formed in the semiconductor wafer W (dividing trench forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and the wiring structures required for the semiconductor elements (not shown) have been formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is attached to the second surface Wb side of the semiconductor wafer W, while the semiconductor wafer W is held on the wafer processing tape T1, A dividing groove 30a of a specific depth is formed on the first surface Wa side of the semiconductor wafer W using a rotating blade of a dicing device or the like. The dividing grooves 30a are gaps for separating the semiconductor wafer W into semiconductor wafer units (the dividing grooves 30a are schematically represented by thick solid lines in FIGS. 2 to 4 ).

其次，如圖2(c)所示，進行具有黏著面T2a之晶圓加工用膠帶T2向半導體晶圓W之第1面Wa側之貼合、及晶圓加工用膠帶T1自半導體晶圓W之剝離。 Next, as shown in FIG. 2(c) , the wafer processing tape T2 having the adhesive surface T2a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is removed from the semiconductor wafer W. of peeling off.

其次，如圖2(d)所示，於半導體晶圓W保持於晶圓加工用膠帶T2之狀態下，將半導體晶圓W藉由自第2面Wb之研削加工而薄化至特定之厚度(晶圓薄化步驟)。研削加工可使用具備研削磨石之研削加工裝置進行。藉由該晶圓薄化步驟，於本實施形態中，形成能夠單片化為複數個半導體晶片31之半導體晶圓30A。具體而言，半導體晶圓30A具有將該晶圓中將要單片化為複數個半導體晶片31之部位於第2面Wb側連結之部位(連結部)。半導體晶圓30A中之連結部之厚度、即半導體晶圓30A之第2面Wb與分割槽30a之第2面Wb側前端之間之距離例如為1~30μm，較佳為3~20μm。 Next, as shown in FIG. 2(d) , while the semiconductor wafer W is held on the wafer processing tape T2, the semiconductor wafer W is thinned to a specific thickness by grinding from the second surface Wb. (wafer thinning step). Grinding can be performed using a grinding device equipped with a grinding stone. Through this wafer thinning step, in this embodiment, a semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed. Specifically, the semiconductor wafer 30A has a portion (connection portion) that connects portions of the wafer to be diced into a plurality of semiconductor wafers 31 on the second surface Wb side. The thickness of the connection portion in the semiconductor wafer 30A, that is, the second surface Wb and the division of the semiconductor wafer 30A The distance between the front ends of the groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm.

其次，如圖3(a)所示，對切晶黏晶膜X之接著劑層20貼合保持於晶圓加工用膠帶T2之半導體晶圓30A。其後，如圖3(b)所示，自半導體晶圓30A剝離晶圓加工用膠帶T2。於切晶黏晶膜X中之黏著劑層12為放射線硬化性黏著劑層之情形時，可於半導體晶圓30A貼合於接著劑層20後，自基材11之側對黏著劑層12照射紫外線等放射線，以代替切晶黏晶膜X之製造過程中之上述放射線照射。照射量例如為50~500mJ/cm²。切晶黏晶膜X中進行作為黏著劑層12之黏著力降低措施之照射之區域(圖1所示之照射區域R)例如為黏著劑層12中之接著劑層20貼合區域內之除其周緣部以外的區域。 Next, as shown in FIG. 3(a) , the adhesive layer 20 of the bisection die attach film X is bonded to the semiconductor wafer 30A held by the wafer processing tape T2. Thereafter, as shown in FIG. 3(b) , the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the adhesive layer 12 in the die-cut die-bonding film Radiation rays such as ultraviolet rays are irradiated to replace the above-mentioned irradiation of radiation in the manufacturing process of the die-cut die-bonding film X. The irradiation dose is, for example, 50 to 500 mJ/cm ² . The area of the die-cut die-bonding film The area outside its peripheral edge.

其次，於切晶黏晶膜X中之切晶帶10之黏著劑層12上貼附環形框41後，如圖4(a)所示，伴隨有半導體晶圓30A之該切晶黏晶膜X固定於擴張裝置之保持器42。 Next, after the annular frame 41 is attached to the adhesive layer 12 of the die tape 10 in the die attach film X is fixed to the holder 42 of the expansion device.

其次，如圖4(b)所示進行相對低溫之條件下之第1擴張步驟(冷擴張步驟)，將半導體晶圓30A單片化為複數個半導體晶片31，並且將切晶黏晶膜X之接著劑層20割斷為小片之接著劑層21，獲得附接著劑層之半導體晶片31。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43係於切晶黏晶膜X之圖中下側抵接於切晶帶10並上升，而將貼合有半導體晶圓30A之切晶黏晶膜X之切晶帶10以沿包含半導體晶圓30A之徑向及圓周方向之二維方向伸展的方式進行擴張。該擴張係於使切晶帶10中產生較佳為 15~32MPa、更佳為20~32MPa之範圍內之拉伸應力之條件下進行。冷擴張步驟中之溫度條件較佳為0℃以下，更佳為-20~-5℃，更佳為-15~-5℃，更佳為-15℃。冷擴張步驟中之擴張速度(頂起構件43上升之速度)較佳為0.1~100mm/秒。又，冷擴張步驟中之擴張量較佳為3~16mm。 Next, as shown in FIG. 4(b) , the first expansion step (cold expansion step) is performed under relatively low temperature conditions, the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the die-bonding film X is cut The adhesive layer 20 is cut into small pieces of the adhesive layer 21 to obtain the semiconductor wafer 31 with the adhesive layer attached. In this step, the hollow cylindrical lifting member 43 of the expansion device is in contact with the dicing belt 10 on the lower side of the dicing die bonding film The die tape 10 of the die attach film X expands in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expansion is preferably caused in the cutting zone 10 by It is carried out under the condition of tensile stress in the range of 15~32MPa, preferably 20~32MPa. The temperature condition in the cold expansion step is preferably below 0°C, more preferably -20~-5°C, more preferably -15~-5°C, more preferably -15°C. The expansion speed in the cold expansion step (the speed at which the lifting member 43 rises) is preferably 0.1~100 mm/second. In addition, the expansion amount in the cold expansion step is preferably 3 to 16 mm.

於本步驟中，於半導體晶圓30A中因薄壁容易破裂之部位產生割斷而產生向半導體晶片31之單片化。與此同時，於本步驟中，於與被擴張之切晶帶10之黏著劑層12密接之接著劑層20中各半導體晶片31所密接之各區域抑制變形，另一方面，於不產生此種變形抑制作用之狀態下，切晶帶10產生之拉伸應力作用於與半導體晶片31間之分割槽對向之部位。其結果為接著劑層20中與半導體晶片31間之分割槽對向之部位被割斷。於本步驟後，如圖4(c)所示，頂起構件43下降，解除切晶帶10中之擴張狀態。 In this step, parts of the semiconductor wafer 30A that are easily cracked due to thin walls are cut, thereby causing the semiconductor wafer 31 to be singulated. At the same time, in this step, deformation is suppressed in each region of the adhesive layer 20 that is in close contact with the adhesive layer 12 of the expanded dicing belt 10 and where each semiconductor wafer 31 is in close contact. On the other hand, this does not occur. In this state of deformation suppression, the tensile stress generated by the dicing belt 10 acts on the portion facing the dividing groove between the semiconductor wafers 31 . As a result, the portion of the adhesive layer 20 facing the dividing groove between the semiconductor wafers 31 is cut. After this step, as shown in FIG. 4(c) , the lifting member 43 descends to release the expansion state in the dicing belt 10 .

其次，如圖5(a)所示進行相對高溫之條件下之第2擴張步驟，擴大附接著劑層之半導體晶片31間之距離(間隔距離)。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43再次上升，擴張切晶黏晶膜X之切晶帶10。第2擴張步驟中之溫度條件例如為10℃以上，較佳為15~30℃。第2擴張步驟中之擴張速度(頂起構件43上升之速度)例如為0.1~10mm/秒，較佳為0.3~1mm/秒。又，第2擴張步驟中之擴張量例如為3~16mm。以藉由下述拾取步驟能夠自切晶帶10適當地拾取附接著劑層之半導體晶片31之程度，於本步驟中擴大附接著劑層之半導體晶片31之間隔距離。於本步驟後，如圖5(b)所示，頂起構件43下降，解除切晶帶10中之擴張狀態。為了抑制擴張狀態解除後切晶帶10上之附接著劑層之半導體晶片31 之間隔距離變窄，較佳為於解除擴張狀態之前，對切晶帶10中之較半導體晶片31保持區域更外側之部分進行加熱而使之收縮。 Next, as shown in FIG. 5(a) , a second expansion step is performed under relatively high temperature conditions to expand the distance (spacing distance) between the semiconductor wafers 31 with the adhesive layer attached. In this step, the hollow cylindrical lifting member 43 of the expansion device is raised again to expand the die cutting belt 10 of the die adhesion film X. The temperature condition in the second expansion step is, for example, 10°C or higher, preferably 15 to 30°C. The expansion speed in the second expansion step (the speed at which the lifting member 43 rises) is, for example, 0.1 to 10 mm/second, preferably 0.3 to 1 mm/second. Moreover, the expansion amount in the second expansion step is, for example, 3 to 16 mm. In this step, the separation distance between the semiconductor wafers 31 with the adhesive layer attached is enlarged to the extent that the semiconductor wafers 31 with the adhesive layer attached can be appropriately picked up from the dicing tape 10 by the following pickup step. After this step, as shown in FIG. 5(b) , the lifting member 43 descends to release the expanded state of the dicing belt 10 . In order to suppress the expansion state, the semiconductor wafer 31 is released from the adhesive layer on the rear dicing belt 10 To narrow the distance between them, it is preferable to heat and shrink the portion of the dicing belt 10 that is outside the semiconductor wafer 31 holding area before releasing the expanded state.

其次，視需要經過使用水等清洗液清洗伴隨有附接著劑層之半導體晶片31之切晶帶10中之半導體晶片31側的清潔步驟後，如圖6所示，自切晶帶10拾取附接著劑層之半導體晶片31(拾取步驟)。例如使位於切晶帶10之圖中下側之拾取機構之銷構件44上升，而隔著切晶帶10將拾取對象之附接著劑層之半導體晶片31頂起後，利用吸附治具45進行吸附保持。於拾取步驟中，銷構件44之頂起速度例如為1~100mm/秒，銷構件44之頂起量例如為50~3000μm。 Next, if necessary, after the cleaning step of using a cleaning solution such as water to clean the semiconductor wafer 31 side of the dicing belt 10 with the adhesive layer attached thereto, the attached wafer is picked up from the dicing belt 10 as shown in FIG. 6 The semiconductor wafer 31 is adhered to the adhesive layer (picking up step). For example, the pin member 44 of the pickup mechanism located on the lower side of the dicing belt 10 in the figure is raised, and the semiconductor wafer 31 with the adhesive layer to be picked up is lifted through the dicing belt 10 , and then the adsorption jig 45 is used. Adsorption and retention. In the picking step, the lifting speed of the pin member 44 is, for example, 1 to 100 mm/second, and the lifting amount of the pin member 44 is, for example, 50 to 3000 μm.

其次，如圖7(a)所示，拾取之附接著劑層之半導體晶片31經由接著劑層21預固著於特定之被黏著體51(黏晶步驟)。作為被黏著體51，例如可列舉：引線框架、TAB(Tape Automated Bonding，卷膠帶式自動接合)膜、配線基板、及另外製作之半導體晶片。於本步驟中，於經由接著劑層21黏晶於基板上之半導體晶片31之上，依序多段積層與製造目標之半導體裝置之構成對應之特定數量之附接著劑層之半導體晶片31。 Next, as shown in FIG. 7(a) , the picked-up semiconductor wafer 31 with the adhesive layer attached is pre-fixed to the specific adherend 51 via the adhesive layer 21 (wafer bonding step). Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately produced semiconductor wafer. In this step, on the semiconductor wafer 31 adhered to the substrate via the adhesive layer 21, the semiconductor wafer 31 with a specific number of adhesive layers corresponding to the composition of the semiconductor device to be manufactured is sequentially stacked in multiple stages.

其次，如圖7(b)所示，經由接合線52將半導體晶片31之電極墊(省略圖示)與被黏著體51所具有之端子部(省略圖示)電性連接(打線接合步驟)。半導體晶片31之電極墊或被黏著體51之端子部與接合線52之接線係藉由伴隨有加熱之超音波焊接而實現，以不使接著劑層21熱硬化之方式進行。作為接合線52，例如可使用金線、鋁線或銅線。打線接合中之導線加熱溫度例如為80~250℃。 Next, as shown in FIG. 7( b ), the electrode pad (not shown) of the semiconductor chip 31 is electrically connected to the terminal portion (not shown) of the adherend 51 via the bonding wire 52 (wire bonding step) . The connection between the electrode pads of the semiconductor chip 31 or the terminal portion of the adherend 51 and the bonding wires 52 is achieved by ultrasonic welding accompanied by heating, without thermally hardening the adhesive layer 21 . As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. Wire heating temperature during wire bonding The temperature is, for example, 80~250°C.

其次，如圖7(c)所示，藉由用以保護被黏著體51上之半導體晶片31或接合線52之密封樹脂53密封半導體晶片31(密封步驟)。於本步驟中，進行接著劑層21之熱硬化。於本步驟中，例如藉由使用模具進行之轉注成形技術形成密封樹脂53。作為密封樹脂53之構成材料，例如可使用環氧系樹脂。於本步驟中，用以形成密封樹脂53之加熱溫度例如為165~185℃，加熱時間例如為60秒~數分鐘。於在本步驟(密封步驟)中未充分地進行密封樹脂53之硬化之情形時，於本步驟後進行用以使密封樹脂53完全硬化之後硬化步驟。即便於密封步驟中接著劑層21未完全熱硬化之情形時，亦可於後硬化步驟中與密封樹脂53一起進行接著劑層21之完全之熱硬化。於後硬化步驟中，加熱溫度例如為165~185℃，加熱時間例如為0.5~8小時。 Next, as shown in FIG. 7(c) , the semiconductor chip 31 is sealed with the sealing resin 53 for protecting the semiconductor chip 31 or the bonding wire 52 on the adherend 51 (sealing step). In this step, the adhesive layer 21 is thermally hardened. In this step, the sealing resin 53 is formed, for example, by transfer molding using a mold. As a constituent material of the sealing resin 53, for example, epoxy resin can be used. In this step, the heating temperature used to form the sealing resin 53 is, for example, 165°C to 185°C, and the heating time is, for example, 60 seconds to several minutes. When the sealing resin 53 is not sufficiently hardened in this step (sealing step), a post-hardening step for completely hardening the sealing resin 53 is performed after this step. Even if the adhesive layer 21 is not completely thermally cured in the sealing step, the adhesive layer 21 can be completely thermally cured together with the sealing resin 53 in the post-curing step. In the post-hardening step, the heating temperature is, for example, 165~185°C, and the heating time is, for example, 0.5~8 hours.

以如上方式，可製造半導體裝置。 In the above manner, a semiconductor device can be manufactured.

於本實施形態中，如上所述，於附接著劑層之半導體晶片31預固著於被黏著體51後，於接著劑層21不達到完全之熱硬化之情況下進行打線接合步驟。亦可於附接著劑層之半導體晶片31預固著於被黏著體51後，使接著劑層21熱硬化後進行打線接合步驟，以代替此種構成。 In this embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is pre-fixed to the adherend 51 , the wire bonding step is performed without the adhesive layer 21 being completely thermally cured. Instead of this structure, the semiconductor chip 31 with the adhesive layer attached can be pre-fixed to the adherend 51 , the adhesive layer 21 can be thermally hardened, and then the wire bonding step can be performed.

於半導體裝置製造方法中，亦可經過上文參照圖2(c)所敍述之過程後，進行圖8所示之晶圓薄化步驟，以代替上文參照圖2(d)所敍述之晶圓薄化步驟。於圖8所示之晶圓薄化步驟中，於半導體晶圓W保持於晶圓加工用膠帶T2之狀態下，將該晶圓藉由自第2面Wb之研削加工而薄化至特定之厚度，形成包含複數個半導體晶片31且保持於晶圓加工用膠帶T2之半導體晶圓分割體30B。於本步驟中，可採用研削晶圓直至分割槽30a其本身露出於第2面Wb側為止之方法(第1方法)，亦可採用於自第2面Wb側到達至分割槽30a之前研削晶圓，其後，藉由自旋轉磨石向晶圓之按壓力之作用，於分割槽30a與第2面Wb之間產生裂痕而形成半導體晶圓分割體30B的方法(第2方法)。根據採用之方法，適當地確定如上文參照圖2(a)及圖2(b)所敍述般形成之分割槽30a距第1面Wa之深度。於圖8中，對經過第1方法之分割槽30a、或經過第2方法之分割槽30a及與其連接之裂痕，模式性地以粗實線表示。於本實施形態中，亦可對切晶黏晶膜X貼合如此製作之半導體晶圓分割體30B代替上述半導體晶圓30A後，進行上文參照圖3至圖7所敍述之各步驟。 In the semiconductor device manufacturing method, the wafer thinning step shown in Figure 8 can also be performed after the process described above with reference to Figure 2(c), instead of the wafer thinning step described above with reference to Figure 2(d). round Thinning step. In the wafer thinning step shown in FIG. 8 , while the semiconductor wafer W is held on the wafer processing tape T2, the wafer is thinned to a specific thickness by grinding the second surface Wb. thickness, a semiconductor wafer divided body 30B including a plurality of semiconductor wafers 31 and held by the wafer processing tape T2 is formed. In this step, the method of grinding the wafer until the dividing groove 30a itself is exposed on the second surface Wb side (first method) can be used, or the wafer can be ground before reaching the dividing groove 30a from the second surface Wb side. Then, a crack is generated between the dividing groove 30a and the second surface Wb by the pressing force of the rotating grindstone on the wafer, thereby forming the semiconductor wafer divided body 30B (second method). The depth of the dividing groove 30a formed as described above with reference to FIGS. 2(a) and 2(b) from the first surface Wa is appropriately determined according to the method used. In FIG. 8 , the dividing groove 30 a passing through the first method or the dividing groove 30 a passing the second method and the cracks connected thereto are schematically represented by thick solid lines. In this embodiment, the semiconductor wafer divided body 30B produced in this manner can also be bonded to the cut die attach film X instead of the semiconductor wafer 30A, and then the steps described above with reference to FIGS. 3 to 7 can be performed.

圖9(a)及圖9(b)係表示於切晶黏晶膜X貼合半導體晶圓分割體30B後進行之第1擴張步驟(冷擴張步驟)。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43係於切晶黏晶膜X之圖中下側抵接於切晶帶10並上升，而將貼合有半導體晶圓分割體30B之切晶黏晶膜X之切晶帶10以沿包含半導體晶圓分割體30B之徑向及圓周方向之二維方向伸展的方式進行擴張。該擴張係於使切晶帶10中產生例如1~100MPa、較佳為5~40MPa之範圍內之拉伸應力之條件下進行。本步驟中之溫度條件較佳為0℃以下，更佳為-20~-5℃，更佳為-15~-5℃，更佳為-15℃。本步驟中之擴張速度(頂起構件43上升之速度)較佳為1~500mm/秒。又，本步驟中之擴張量較佳為50~200mm。藉由此種冷擴張步驟，將切晶黏晶膜X之接著劑層20割斷為小片之接著劑層21而獲得附接著劑層之半導體晶片31。具體而言，於本步驟中，於與被擴張之切晶帶10之黏著劑層12密接之接著劑層20中半導體晶圓分割體30B之各半導體晶片31所密接之各區域抑制變形，另一方面，於不產生此種變形抑制作用之狀態下，切晶帶10產生之拉伸應力作用於與半導體晶片31間之分割槽30a對向之部位。其結果為將接著劑層20中與半導體晶片31間之分割槽30a對向之部位割斷。 9(a) and 9(b) show the first expansion step (cold expansion step) performed after the semiconductor wafer divided body 30B is bonded to the die attach film X. In this step, the hollow cylindrical lifting member 43 of the expansion device is in contact with the dicing belt 10 on the lower side of the dicing die-adhesive film X in the figure and rises, thereby dividing the bonded semiconductor wafer. The die tape 10 of the die attach film X of the body 30B expands in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B. This expansion is performed under conditions that generate a tensile stress in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa, in the dicing belt 10 . The temperature condition in this step is preferably below 0°C, more preferably -20~-5°C, more preferably -15~-5°C, more preferably -15°C. The expansion speed in this step (the speed at which the lifting member 43 rises) is preferably 1~500 mm/second. Also, in this step The optimal expansion amount is 50~200mm. Through this cold expansion step, the adhesive layer 20 of the die-cut die attach film X is cut into small pieces of adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer attached. Specifically, in this step, deformation is suppressed in each region of the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing belt 10 and in which each semiconductor wafer 31 of the semiconductor wafer divided body 30B is in close contact. On the other hand, in a state where such a deformation suppressing effect does not occur, the tensile stress generated by the dicing belt 10 acts on the portion facing the dividing groove 30 a between the semiconductor wafers 31 . As a result, the portion of the adhesive layer 20 facing the dividing groove 30 a between the semiconductor wafers 31 is cut.

於本實施形態之半導體裝置製造方法中，亦可對切晶黏晶膜X貼合以如下方式製作之半導體晶圓30C，以代替對切晶黏晶膜X貼合半導體晶圓30A或半導體晶圓分割體30B之上述構成。 In the semiconductor device manufacturing method of this embodiment, instead of laminating the semiconductor wafer 30A or the semiconductor wafer 30A with the bisected die-attach film The above-mentioned structure of the circular divided body 30B.

如圖10(a)及圖10(b)所示，首先，於半導體晶圓W形成改質區域30b。半導體晶圓W具有第1面Wa及第2面Wb。於半導體晶圓W中之第1面Wa之側已製作有各種半導體元件(省略圖示)，且該半導體元件所需之配線構造等(省略圖示)已形成於第1面Wa上。於本步驟中，於具有黏著面T3a之晶圓加工用膠帶T3貼合於半導體晶圓W之第1面Wa側後，於半導體晶圓W保持於晶圓加工用膠帶T3之狀態下，自與晶圓加工用膠帶T3相反之側對半導體晶圓W沿其分割預定線照射使聚光點對準晶圓內部之雷射光，利用由多光子吸收所引起之剝蝕而於半導體晶圓W內形成改質區域30b。改質區域30b係用以將半導體晶圓W分離為半導體晶片單位之脆化區域。關於在半導體晶圓中藉由雷射光照射於分割預定線上形成改質區域30b之方法，例如於日本專利特開2002-192370號公報中有詳細敍述。於該方法中，本實施形態中之雷射光照射條件例如於以下之條件之範圍內適當地調整。 As shown in FIG. 10(a) and FIG. 10(b) , first, a modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the side of the first surface Wa in the semiconductor wafer W, and the wiring structures required for the semiconductor elements (not shown) have been formed on the first surface Wa. In this step, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, and the semiconductor wafer W is held on the wafer processing tape T3, the wafer processing tape T3 is automatically The semiconductor wafer W is irradiated on the side opposite to the wafer processing tape T3 along the planned division line so that the light-concentrating point is aligned with the inside of the wafer, and the ablation caused by multi-photon absorption is used to penetrate the semiconductor wafer W. A modified region 30b is formed. The modified region 30b is an embrittlement region used to separate the semiconductor wafer W into semiconductor wafer units. A method of forming the modified region 30b in a semiconductor wafer by irradiating laser light onto a line to be divided is described in detail in, for example, Japanese Patent Application Laid-Open No. 2002-192370. in this method , the laser light irradiation conditions in this embodiment are appropriately adjusted within the range of the following conditions, for example.

<雷射光照射條件> <Laser light irradiation conditions>

(A)雷射光 (A)Laser light

(B)聚光用透鏡 (B) Focusing lens

其次，於半導體晶圓W保持於晶圓加工用膠帶T3之狀態下，將半導體晶圓W藉由自第2面Wb之研削加工而薄化至特定之厚度，如圖10(c)所示，形成能夠單片化為複數個半導體晶片31之半導體晶圓30C(晶圓薄化步驟)。於本實施形態中，可對切晶黏晶膜X貼合以如上方式製作之半導體晶圓30C代替半導體晶圓30A後，進行上文參照圖3至圖7所敍述之各步驟。 Next, while the semiconductor wafer W is held on the wafer processing tape T3, the semiconductor wafer W is thinned to a specific thickness by grinding from the second surface Wb, as shown in FIG. 10(c) , forming a semiconductor wafer 30C that can be singulated into a plurality of semiconductor wafers 31 (wafer thinning steps). In this embodiment, after the semiconductor wafer 30C produced in the above manner is bonded to the halved die-attach film X instead of the semiconductor wafer 30A, the steps described above with reference to FIGS. 3 to 7 can be performed.

圖11(a)及圖11(b)係表示對切晶黏晶膜X貼合半導體晶圓30C後進行之第1擴張步驟(冷擴張步驟)。於本步驟中，擴張裝置所具備之中空圓柱形狀之頂起構件43係於切晶黏晶膜X之圖中下側抵接於切晶帶10並上升，而將貼合有半導體晶圓30C之切晶黏晶膜X之切晶帶10以沿包含半導體晶圓30C之徑向及圓周方向之二維方向伸展的方式進行擴張。該擴張係於使切晶帶10中產生例如1~100MPa、較佳為5~40MPa之範圍內之拉伸應力之條件下進行。本步驟中之溫度條件較佳為0℃以下，更佳為-20~-5℃，更佳為-15~-5℃，更佳為-15℃。本步驟中之擴張速度(頂起構件43上升之速度)較佳為1~500mm/秒。又，本步驟中之擴張量較佳為50~200mm。藉由此種冷擴張步驟，將切晶黏晶膜X之接著劑層20割斷為小片之接著劑層21而獲得附接著劑層之半導體晶片31。具體而言，於本步驟中，於半導體晶圓30C中脆性之改質區域30b形成裂痕而產生向半導體晶片31之單片化。與此同時，於本步驟中，於與被擴張之切晶帶10之黏著劑層12密接之接著劑層20中半導體晶圓30C之各半導體晶片31所密接之各區域抑制變形，另一方面，於不產生此種變形抑制作用之狀態下，切晶帶10產生之拉伸應力作用於與晶圓之裂痕形成部位對向之部位。其結果為將接著劑層20中與半導體晶片31間之裂痕形成部位對向之部位割斷。 11(a) and 11(b) illustrate the first expansion step (cold expansion step) performed after the diced die-attach film X is bonded to the semiconductor wafer 30C. In this step, the hollow cylindrical lifting member 43 of the expansion device is in contact with the dicing belt 10 on the lower side of the dicing die bonding film The die tape 10 of the die attach film X expands in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expansion is performed under conditions that generate a tensile stress in the range of, for example, 1 to 100 MPa, preferably 5 to 40 MPa, in the dicing belt 10 . The temperature condition in this step is preferably below 0°C, more preferably -20~-5°C, more preferably -15~-5°C, more preferably -15°C. The expansion speed in this step (the speed at which the lifting member 43 rises) is preferably 1~500 mm/second. In addition, the expansion amount in this step is preferably 50~200mm. Through this cold expansion step, the adhesive layer 20 of the die-cut die attach film X is cut into small pieces of adhesive layer 21 to obtain a semiconductor wafer 31 with an adhesive layer attached. Specifically, in this step, cracks are formed in the brittle modified region 30b of the semiconductor wafer 30C to cause singulation of the semiconductor wafer 31. At the same time, in this step, deformation is suppressed in each region of the adhesive layer 20 in close contact with the adhesive layer 12 of the expanded dicing belt 10 in which each semiconductor chip 31 of the semiconductor wafer 30C is in close contact. , in a state where such a deformation-inhibiting effect does not occur, the tensile stress generated by the dicing belt 10 acts on the portion opposite to the crack formation portion of the wafer. As a result, the portion of the adhesive layer 20 facing the crack formation portion between the semiconductor wafers 31 is cut.

[實施例] [Example] [實施例1] [Example 1] 〈切晶帶之製作〉〈Preparation of crystal cutting tape〉

於具備冷卻管、氮氣導入管、溫度計及攪拌裝置之反應容器內，將包含丙烯酸2-乙基己酯(2EHA)100質量份、丙烯酸2-羥基乙酯(HEA)19質量份、作為聚合起始劑之過氧化苯甲醯0.4質量份及作為聚合溶劑之甲苯80質量份之混合物於60℃下於氮氣氛圍下攪拌10小時(聚合反應)。藉此，獲得含有丙烯酸系聚合物P₁之聚合物溶液。其次，將包含該含有丙烯酸系聚合物P₁之聚合物溶液、異氰酸2-甲基丙烯醯氧基乙酯(MOI)及作為加成反應觸媒之二月桂酸二丁基錫之混合物於50℃下於空氣氛圍下攪拌60小時(加成反應)。於該反應溶液中，MOI之調配量相對於丙烯酸系聚合物P₁ 100質量份為1.2質量份。又，於該反應溶液中，二月桂酸二丁基錫之調配量相對於丙烯酸系聚合物P₁ 100質量份為0.1質量份。藉由該加成反應，獲得含有側鏈具有甲基丙烯醯基之丙烯酸系聚合物P₂之聚合物溶液。其次，於該聚合物溶液中加入相對於丙烯酸系聚合物P₂ 100質量份為1.3質量份之多異氰酸酯化合物(商品名「Coronate L」，東曹股份有限公司製造)、及3質量份之光聚合起始劑(商品名「Irgacure 184」，BASF公司製造)進行混合，且以該混合物於室溫下之黏度成為500mPa‧s之方式對該混合物加入甲苯進行稀釋，獲得黏著劑溶液。其次，於具有經實施聚矽氧脫模處理之面之PET隔離膜之聚矽氧脫模處理面上使用敷料器塗佈黏著劑溶液而形成塗膜，對該塗膜於120℃下進行2分鐘之加熱乾燥，於PET隔離膜上形成厚度10μm之黏著劑層。其次，使用貼合機，於該黏著劑層之露出面於室溫下貼合乙烯-乙酸乙烯酯共聚物(EVA)製基材(厚度115μm)。以如上方式製作切晶帶。 In a reaction vessel equipped with a cooling pipe, a nitrogen introduction pipe, a thermometer and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate (2EHA) and 19 parts by mass of 2-hydroxyethyl acrylate (HEA) were placed as a starting material for polymerization. A mixture of 0.4 parts by mass of benzoyl peroxide as the starting agent and 80 parts by mass of toluene as the polymerization solvent was stirred at 60° C. in a nitrogen atmosphere for 10 hours (polymerization reaction). Thereby, a polymer solution containing acrylic polymer _P1 was obtained. Next, a mixture containing the polymer solution containing acrylic polymer P ₁ , 2-methacryloyloxyethyl isocyanate (MOI) and dibutyltin dilaurate as an addition reaction catalyst was heated at 50 °C in air atmosphere for 60 hours (addition reaction). In this reaction solution, the compounding amount of MOI was 1.2 parts by mass relative to 100 parts by mass of acrylic polymer P ₁ . Moreover, the compounding amount of dibutyltin dilaurate in this reaction solution was 0.1 part by mass with respect to 100 parts by mass of acrylic polymer _P1 . By this addition reaction, a polymer solution containing the acrylic polymer _P2 having a methacrylic group in the side chain is obtained. Next, 1.3 parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) and 3 parts by mass of light were added to the polymer solution based on 100 parts by mass of the acrylic polymer _P2 . A polymerization initiator (trade name "Irgacure 184", manufactured by BASF) was mixed, and toluene was added to the mixture to dilute it so that the viscosity of the mixture at room temperature became 500 mPa‧s, to obtain a binder solution. Next, use an applicator to apply the adhesive solution on the polysilicone release-treated surface of the PET isolation film having the polysilicone release-treated surface to form a coating film, and conduct 2 tests on the coating film at 120°C. After minutes of heating and drying, an adhesive layer with a thickness of 10 μm is formed on the PET isolation film. Next, a laminating machine was used to laminate an ethylene-vinyl acetate copolymer (EVA) base material (thickness: 115 μm) on the exposed surface of the adhesive layer at room temperature. Cut crystal strips are made as above.

〈接著劑層之形成〉〈Formation of adhesive layer〉

將丙烯酸系樹脂A₁(商品名「TEISANRESIN SG-80H」，重量平均分子量為350000，玻璃轉移溫度Tg為11℃，Nagase chemteX股份有限公司製造)100質量份、酚樹脂(商品名「MEHC-7851SS」，於23℃下為固體，明和化成股份有限公司製造)14質量份及二氧化矽填料(商品名「SO-25R」，Admatechs股份有限公司製造)69質量份加入至特定量之甲基乙基酮中進行混合，製備固形物成分總濃度20質量%之接著劑組合物C₁。其次，於具有經實施聚矽氧脫模處理之面之PET隔離膜之聚矽氧脫模處理面上使用敷料器塗佈接著劑組合物C₁而形成塗膜，對該塗膜於130℃下進行2分鐘之加熱乾燥，於PET隔離膜上形成厚度10μm之作為黏晶膜之接著劑層。 100 parts by mass of acrylic resin A ₁ (trade name "TEISANRESIN SG-80H", weight average molecular weight: 350000, glass transition temperature Tg: 11°C, manufactured by Nagase chemteX Co., Ltd.) and phenol resin (trade name "MEHC-7851SS"", solid at 23°C, manufactured by Meiwa Kasei Co., Ltd.) and 69 parts by mass of silica filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) were added to a specific amount of methyl ethyl The mixture was mixed in a base ketone to prepare an adhesive composition C ₁ with a total solid content concentration of 20% by mass. Next, use an applicator to apply the adhesive composition C ₁ on the polysilicone release-treated surface of the PET release film having the polysilicone release-treated surface to form a coating film. The coating film is heated at 130°C. Heat and dry for 2 minutes to form an adhesive layer with a thickness of 10 μm as an adhesive film on the PET isolation film.

〈切晶黏晶膜之製作〉〈Preparation of crystal-cut crystal adhesive film〉

自上述切晶帶剝離PET隔離膜後，一面將切晶帶中露出之黏著劑層與伴隨有PET隔離膜之上述接著劑層對準，一面使用貼合機於室溫下貼合。以如上方式製作具有包含切晶帶及作為黏晶膜之接著劑層之積層構造的實施例1之切晶黏晶膜。 After peeling off the PET isolation film from the dicing tape, align the adhesive layer exposed in the dicing tape with the adhesive layer accompanying the PET isolation film and laminate them together at room temperature using a laminating machine. The die-cut die-bonding film of Example 1 having a laminated structure including a die-cut tape and an adhesive layer serving as a die-bonding film was produced in the above manner.

[實施例2] [Example 2]

於形成接著劑層(厚度10μm)時使用接著劑組合物C₂代替上述接著劑組合物C₁，除此以外，以與實施例1之切晶黏晶膜相同之方式製作實施例2之切晶黏晶膜。接著劑組合物C₂係將丙烯酸系樹脂A₁(商品名「TEISANRESIN SG-80H」，Nagase chemteX股份有限公司製造)100質量份、環氧樹脂(商品名「JER1001」，三菱化學股份有限公司製造)53質量份、酚樹脂(商品名「MEHC-7851SS」，明和化成股份有限公司製造)45質量份及二氧化矽填料(商品名「SO-25R」，Admatechs股份有限公司製造)193質量份加入至特定量之甲基乙基酮中進行混合，製備為固形物成分總濃度20質量%者。 When forming the adhesive layer (thickness: 10 μm), the adhesive composition C ₂ was used instead of the above-mentioned adhesive composition C ₁ . Except for this, the die-cut die-bonding film of Example 2 was produced in the same manner as the die-cut die-bonding film of Example 1. Crystal-adhesive crystal film. Adhesive composition _C2 is a mixture of 100 parts by mass of acrylic resin _A1 (trade name "TEISANRESIN SG-80H", manufactured by Nagase ChemteX Co., Ltd.) and epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Co., Ltd. ), 45 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.) and 193 parts by mass of silica filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) were added Mix it with a specific amount of methyl ethyl ketone to prepare a total solid content concentration of 20% by mass.

[比較例1] [Comparative example 1]

於形成接著劑層(厚度10μm)時使用接著劑組合物C₃代替上述接著劑組合物C₁，除此以外，以與實施例1之切晶黏晶膜相同之方式製作比較例1之切晶黏晶膜。接著劑組合物C₃係將丙烯酸系樹脂A₂(商品名「TEISANRESIN SG-P3」，重量平均分子量為850000，玻璃轉移溫度Tg為12℃，Nagase chemteX股份有限公司製造)100質量份、環氧樹脂(商品名「JER1001」，三菱化學股份有限公司製造)58質量份、酚樹脂(商品名「MEHC-7851SS」，明和化成股份有限公司製造)55質量份及二氧化矽填料(商品名「SO-25R」，Admatechs股份有限公司製造)69質量份加入至特定量之甲基乙基酮中進行混合，製備為固形物成分總濃度20質量%者。 The die-cut die-bonding film of Comparative Example 1 was produced in the same manner as the die-cut die-bonding film of Example 1, except that the adhesive composition C ₃ was used instead of the above-mentioned adhesive composition C ₁ when forming the adhesive layer (thickness: 10 μm). Crystal-adhesive crystal film. Adhesive composition C ₃ is a mixture of 100 parts by mass of acrylic resin A ₂ (trade name "TEISANRESIN SG-P3", weight average molecular weight: 850000, glass transition temperature Tg: 12°C, manufactured by Nagase chemteX Co., Ltd.) and epoxy resin 58 parts by mass of resin (trade name "JER1001", manufactured by Mitsubishi Chemical Co., Ltd.), 55 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.) and silica filler (trade name "SO -25R", manufactured by Admatechs Co., Ltd.) was added to a specific amount of methyl ethyl ketone and mixed to prepare a total solid content concentration of 20 mass %.

[比較例2] [Comparative example 2]

於形成接著劑層(厚度10μm)時使用接著劑組合物C₄代替上述接著劑組合物C₁，除此以外，以與實施例1之切晶黏晶膜相同之方式製作比較例2之切晶黏晶膜。接著劑組合物C₄係將丙烯酸系樹脂A₂(商品名「TEISANRESIN SG-P3」，Nagase chemteX股份有限公司製造)100質量份、環氧樹脂(商品名「JER1001」，三菱化學股份有限公司製造)73質量份、酚樹脂(商品名「MEHC-7851SS」，明和化成股份有限公司製造)89質量份及二氧化矽填料(商品名「SO-25R」，Admatechs股份有限公司製造)69質量份加入至特定量之甲基乙基酮中進行混合，製備為固形物成分總濃度20質量%者。 The die-cut die-bonding film of Comparative Example 2 was produced in the same manner as the die-cut die-bonding film of Example 1 except that the adhesive composition C ₄ was used instead of the above-mentioned adhesive composition C ₁ when forming the adhesive layer (thickness: 10 μm). Crystal-adhesive crystal film. Adhesive composition C ₄ is a mixture of 100 parts by mass of acrylic resin A ₂ (trade name "TEISANRESIN SG-P3", manufactured by Nagase ChemteX Co., Ltd.) and epoxy resin (trade name "JER1001", manufactured by Mitsubishi Chemical Co., Ltd. ), 73 parts by mass of phenol resin (trade name "MEHC-7851SS", manufactured by Meiwa Chemical Co., Ltd.), and 69 parts by mass of silica filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) were added Mix it with a specific amount of methyl ethyl ketone to prepare a total solid content concentration of 20% by mass.

[接著劑層之180°剝離黏著力] [180° Peeling Adhesion of Adhesive Layer]

對實施例1、2及比較例1、2之各切晶黏晶膜中之接著劑層調查180°剝離黏著力。首先，自切晶帶剝離接著劑層，於該接著劑層中貼合於切晶帶之側之面貼合襯底膠帶(商品名「BT-315」，日東電工股份有限公司製造)，自該襯底接著劑層切割出試片(寬度10mm×長度60mm)。其次，對載置於設定溫度60℃之加熱板上之矽晶圓確認其表面溫度為60℃後，將該矽晶圓表面(Si平面)與試片中之接著劑層之露出面貼合。該貼合係藉由使2kg之手壓輥往復1次之壓接作業而進行。然後，使用拉伸試驗機(商品名「Autograph AGS-J」，島津製作所股份有限公司製造)，於100℃、剝離角度180°及剝離速度30mm/分鐘之條件下進行自矽晶圓剝離試片之剝離試驗，測定接著劑層對矽晶圓於100℃下之180°剝離黏著力(N/10mm)(第1黏著力之測定)。又，對實施例1、2及比較例1、2之各切晶黏晶膜中之接著劑層，將測定溫度設為23℃代替100℃，除此以外，以與100℃下之180°剝離黏著力測定相同之方式，測定接著劑層對矽晶圓之180°剝離黏著力(N/10mm)(第2黏著力之測定)。對實施例1、2及比較例1、2之各切晶黏晶膜中之接著劑層，將測定溫度設為-15℃代替100℃，除此以外，以與100℃下之180°剝離黏著力測定相同之方式，測定接著劑層對矽晶圓之180°剝離黏著力(N/10mm)(第3黏著力之測定)。將該等測定結果記載於表1。 The adhesive layer in each of the die-cut die-bonding films of Examples 1 and 2 and Comparative Examples 1 and 2 was investigated for 180° peeling adhesion. First, the adhesive layer is peeled off from the dicing tape, and a backing tape (trade name "BT-315", manufactured by Nitto Denko Co., Ltd.) is attached to the side of the dicing tape in the adhesive layer. A test piece (width 10 mm × length 60 mm) was cut out from the substrate adhesive layer. Next, after confirming that the surface temperature of the silicon wafer placed on a hot plate with a set temperature of 60°C is 60°C, the surface of the silicon wafer (Si plane) is bonded to the exposed surface of the adhesive layer in the test piece. . This lamination is performed by a pressure bonding operation in which a 2kg hand pressure roller is reciprocated once. Then, a tensile testing machine (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation) was used to peel the test piece from the silicon wafer at 100°C, a peeling angle of 180°, and a peeling speed of 30mm/min. Peel test to measure the 180° peeling adhesion (N/10mm) of the adhesive layer to the silicon wafer at 100°C (first measurement of adhesion). In addition, for the adhesive layer in each of the die-cut die-bonding films of Examples 1 and 2 and Comparative Examples 1 and 2, the measurement temperature was set to 23°C instead of 100°C. Otherwise, the measurement temperature was 180° at 100°C. Peel adhesion measurement In the same way, measure the 180° peel adhesion (N/10mm) of the adhesive layer to the silicon wafer (second measurement of adhesion). For the adhesive layer in each of the die-cut die-bonding films of Examples 1 and 2 and Comparative Examples 1 and 2, the measurement temperature was set to -15°C instead of 100°C. Otherwise, the adhesive layer was peeled at 180° at 100°C. The adhesion force is measured in the same way as the adhesion layer to silicon. 180° peeling adhesion of wafer (N/10mm) (3rd measurement of adhesion). These measurement results are listed in Table 1.

[接著劑層之動態黏彈性測定] [Measurement of dynamic viscoelasticity of adhesive layer]

對實施例1、2及比較例1、2之各切晶黏晶膜之接著劑層，基於使用動態黏彈性測定裝置(商品名「RSAIII」，TA Instruments公司製造)進行之動態黏彈性測定，調查100℃下之損耗彈性模數及25~50℃下之損耗正切之波峰之值。供於動態黏彈性測定之試片係形成將各接著劑層積層為厚度200μm之積層體後，自該積層體以寬度10mm×長度40mm之尺寸進行切割所準備者。又，於本測定中，將試片保持用夾頭之初始夾頭間距離設為22.5mm，將測定模式設為拉伸模式，將測定溫度範圍設為-40℃~285℃，將頻率設為1Hz，將動態應變設為0.005%，將升溫速度設為10℃/分鐘。將所求出之100℃下之損耗彈性模數(MPa)及25~50℃下之損耗正切之波峰之值記載於表1(關於比較例1中之接著劑層，於25~50℃之範圍內未出現損耗正切之波峰)。 Based on the dynamic viscoelasticity measurement using a dynamic viscoelasticity measuring device (trade name "RSAIII", manufactured by TA Instruments), the adhesive layer of each die-cut die-bonding film of Examples 1 and 2 and Comparative Examples 1 and 2 was measured. Investigate the loss elastic modulus at 100°C and the peak value of the loss tangent at 25~50°C. The test piece used for the dynamic viscoelasticity measurement was prepared by laminating each adhesive layer into a laminated body with a thickness of 200 μm and then cutting the laminated body into a size of 10 mm width × 40 mm length. In addition, in this measurement, the initial distance between the chucks of the specimen holding chuck was set to 22.5 mm, the measurement mode was set to the tensile mode, the measurement temperature range was set to -40°C to 285°C, and the frequency was set to 22.5 mm. is 1Hz, the dynamic strain is set to 0.005%, and the temperature rise rate is set to 10°C/min. The calculated peak values of the loss elastic modulus (MPa) at 100°C and the loss tangent at 25 to 50°C are recorded in Table 1 (for the adhesive layer in Comparative Example 1, at 25 to 50°C, There is no peak of loss tangent within the range).

[接著劑層之重量減少率] [Weight reduction rate of adhesive layer]

對實施例1、2及比較例1、2之各切晶黏晶膜之接著劑層調查100℃下之重量減少率。自接著劑層切割出約10mg之試樣，對該試樣使用示差熱-熱重量同步測定裝置(商品名「示差熱天平TG-DTA TG8120」，Rigaku股份有限公司製造)，測定升溫過程中之重量減少。本測定係於氮氣氛圍下，自作為基準重量溫度之23℃至300℃以升溫速度10℃/分鐘進行升溫。將試樣中之自23℃下之重量(基準重量)向100℃下之重量之減少率(%)記載於表1。 The weight loss rate at 100°C was investigated for the adhesive layer of each of the die-cut die-bonding films of Examples 1 and 2 and Comparative Examples 1 and 2. A sample of about 10 mg was cut out from the adhesive layer, and a differential thermogravimetric simultaneous measurement device (trade name "differential thermobalance TG-DTA TG8120", manufactured by Rigaku Co., Ltd.) was used on the sample to measure the temperature during the temperature rise process. Weight reduction. This measurement is carried out in a nitrogen atmosphere from 23°C to 300°C, which is the reference weight temperature, at a heating rate of 10°C/min. Record the reduction rate (%) from the weight at 23°C (basic weight) to the weight at 100°C in the sample. in Table 1.

[剝離抑制之評價] [Evaluation of peeling inhibition]

使用實施例1、2及比較例1、2之各切晶黏晶膜，進行如下所述之貼合步驟、用以進行割斷之第1擴張步驟(冷擴張步驟)、用以進行間隔之第2擴張步驟(常溫擴張步驟)及黏晶步驟。 Using each of the die-cut die-bonding films of Examples 1 and 2 and Comparative Examples 1 and 2, the following lamination steps, the first expansion step (cold expansion step) for cutting, and the second step for spacing were performed. 2. Expansion step (room temperature expansion step) and crystal bonding step.

於貼合步驟中，對切晶黏晶膜之接著劑層貼合保持於晶圓加工用膠帶(商品名「UB-3083D」，日東電工股份有限公司製造)之半導體晶圓，其後，自半導體晶圓剝離晶圓加工用膠帶。半導體晶圓係經過半切切晶及薄化者，形成單片化用分割槽(形成寬度25μm、一區間10mm×10mm之格子狀)且具有50μm之厚度。於貼合中，使用貼合機，將貼合速度設為10mm/秒，將溫度條件設為60℃，將壓力條件設為0.15MPa。又，於本步驟中，對切晶黏晶膜中之接著劑層貼合半導體晶圓中與分割槽形成面相反之側之面。 In the bonding step, the adhesive layer of the diced die-attach film is bonded to the semiconductor wafer held on the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Co., Ltd.). Thereafter, it is Semiconductor wafer peeling tape for wafer processing. The semiconductor wafer is half-cut and thinned to form dividing grooves for singulation (forming a grid shape with a width of 25 μm and a section of 10 mm × 10 mm) and a thickness of 50 μm. During lamination, a laminating machine was used, the laminating speed was set to 10mm/second, the temperature condition was set to 60°C, and the pressure condition was set to 0.15MPa. Furthermore, in this step, the adhesive layer in the bisection die attach film is bonded to the surface of the semiconductor wafer opposite to the surface where the dividing groove is formed.

冷擴張步驟係使用模具隔離裝置(商品名「模具隔離膜DDS2300」，Disco股份有限公司製造)，藉由其冷擴張單元進行。具體而言，於伴隨有半導體晶圓之上述切晶黏晶膜或其黏著劑層貼附環形框後，將該切晶黏晶膜安裝於裝置內，藉由同裝置之冷擴張單元，擴張伴隨有半導體晶圓之切晶黏晶膜之切晶帶。於該冷擴張步驟中，溫度為-15℃，擴張速度為200mm/秒，擴張量為12mm。藉由本步驟，於切晶帶上半導體晶圓單片化而獲得複數個附接著劑層之半導體晶片。 The cold expansion step is performed by using a mold isolation device (trade name "Mold Isolation Film DDS2300", manufactured by Disco Co., Ltd.) and using its cold expansion unit. Specifically, after the above-mentioned die-cut die-adhesive film or its adhesive layer accompanying the semiconductor wafer is attached to the annular frame, the die-cut die-adhesive film is installed in the device and expanded by the cold expansion unit of the same device. A dicing tape accompanying the dicing die bonding film of the semiconductor wafer. In this cold expansion step, the temperature is -15°C, the expansion speed is 200mm/second, and the expansion amount is 12mm. Through this step, the semiconductor wafer is singulated on the dicing belt to obtain a plurality of semiconductor wafers with adhesive layers attached.

將經過此種冷擴張步驟時所有半導體晶片中均未產生半導體晶片自切晶帶上之接著劑層之浮升之情形評價為冷擴張步驟中之剝離抑制為「良」，將1個以上之半導體晶片中產生半導體晶片自切晶帶上之接著劑層之浮升之情形評價為冷擴張步驟中之剝離抑制「不良」。 When all the semiconductor wafers undergo such a cold expansion step, the phenomenon that the semiconductor wafer does not rise from the adhesive layer on the dicing tape is evaluated as "good" for the suppression of peeling in the cold expansion step, and one or more The situation in which the semiconductor wafer rises from the adhesive layer on the dicing tape is evaluated as "poor" peeling inhibition in the cold expansion step.

常溫擴張步驟係使用模具隔離裝置(商品名「模具隔離膜DDS2300」，Disco股份有限公司製造)，藉由其常溫擴張單元進行。具體而言，藉由同裝置之常溫擴張單元擴張經過上述冷擴張步驟之伴隨有半導體晶圓之切晶黏晶膜之切晶帶。於該常溫擴張步驟中，溫度為23℃，擴張速度為1mm/秒，擴張量為10mm。其後，對經過常溫擴張之切晶黏晶膜實施加熱收縮處理。其處理溫度為220℃，處理時間為20秒。 The normal temperature expansion step is performed using a mold isolation device (trade name "Mold Isolation Film DDS2300", manufactured by Disco Co., Ltd.) and its normal temperature expansion unit. Specifically, the dicing zone accompanied by the dicing die bonding film of the semiconductor wafer is expanded through the above-mentioned cold expansion step by a normal temperature expansion unit of the same device. In this normal temperature expansion step, the temperature is 23°C, the expansion speed is 1 mm/second, and the expansion amount is 10 mm. Thereafter, the cut die-bonded film expanded at room temperature is subjected to heat shrinkage treatment. The processing temperature is 220°C and the processing time is 20 seconds.

於黏晶步驟中進行經過上述擴張步驟所獲得之附接著劑層之半導體晶片之7段黏晶。具體而言，首先，自切晶帶拾取經過上述擴張步驟所獲得之一附接著劑層之半導體晶片後，經由其接著劑層黏晶於引線框架。其次，自切晶帶拾取經過上述擴張步驟所獲得之另一附接著劑層之半導體晶片後，經由其接著劑層黏晶於引線框架上之半導體晶片。此時，以使上段半導體晶片自如下半導體晶片(俯視正方形之上段半導體晶片)之四邊位於俯視正方形之下段半導體晶片之四邊之正上方之正上方位置偏移的配置而進行黏晶。自正上方位置之位置偏移方向係上段半導體晶片中之一對平行之邊之分離方向，其位置偏移長度為200μm。其後，將經過上述擴張步驟所獲得之另一附接著劑層之半導體晶片經由接著劑層對於引線框架上已經過黏晶之半導體晶片進行黏晶，將該操作進而重複5次。本步驟中之各黏晶係於同一方向上伴隨有上段半導體晶片相對於下段半導體晶片之上述位置偏移(位置偏移長度200μm)。又，本步驟中之各黏晶係於100℃、加壓力0.2MPa及加壓時間2秒之條件下進行。 In the die-bonding step, seven-stage die-bonding of the semiconductor wafer with the adhesive layer obtained through the above-mentioned expansion step is performed. Specifically, first, a semiconductor wafer with an adhesive layer attached thereto obtained through the above-mentioned expansion step is picked up from a dicing tape, and then the semiconductor wafer is bonded to the lead frame via its adhesive layer. Secondly, after picking up another semiconductor wafer with an adhesive layer obtained through the above expansion step from the dicing tape, the semiconductor wafer is bonded to the lead frame through its adhesive layer. At this time, die bonding is performed in an arrangement such that the four sides of the upper semiconductor wafer (the upper semiconductor wafer that is a square in plan view) are shifted from a position directly above the four sides of the lower semiconductor wafer that is a square in plan view. The positional shift direction from the directly above position is the separation direction of a pair of parallel sides in the upper semiconductor chip, and the positional shift length is 200 μm. Thereafter, another semiconductor wafer with an adhesive layer obtained through the above expansion step is attached to the lead frame through the adhesive layer. The semiconductor wafer that has been bonded is bonded, and the operation is repeated five times. Each bonding system in this step is accompanied by the above-mentioned positional shift of the upper semiconductor wafer relative to the lower semiconductor wafer in the same direction (the positional shift length is 200 μm). In addition, each crystal bonding in this step was performed under the conditions of 100°C, a pressure of 0.2MPa, and a pressure time of 2 seconds.

將所有半導體晶片中均未產生第7段黏晶時半導體晶片自接著劑層之浮升之情形評價為黏晶(DB)步驟中之剝離抑制為「良」，將1個以上之半導體晶片中產生半導體晶片自接著劑層之浮升之情形評價為DB步驟中之剝離抑制「不良」。又，將於黏晶步驟後於室溫下放置1小時時所有半導體晶片中均未產生半導體晶片自接著劑層之浮升之情形評價為DB步驟後之室溫下之剝離抑制為「良」，將1個以上之半導體晶片中產生半導體晶片自接著劑層之浮升之情形評價為DB步驟後之室溫下之剝離抑制「不良」。將該等結果記載於表1。 The lifting of the semiconductor wafer from the adhesive layer when no stage 7 die-bonding occurs in all semiconductor wafers is evaluated as "good" for the peeling suppression in the die-bonding (DB) step. The occurrence of lifting of the semiconductor wafer from the adhesive layer was evaluated as "poor" in terms of peeling inhibition in the DB step. In addition, when all the semiconductor wafers were left at room temperature for 1 hour after the die bonding step, the lifting of the semiconductor wafer from the adhesive layer did not occur, and the peeling inhibition at room temperature after the DB step was evaluated as "good". , the occurrence of lifting of the semiconductor wafer from the adhesive layer in one or more semiconductor wafers was evaluated as "poor" in terms of peeling inhibition at room temperature after the DB step. The results are listed in Table 1.

[評價] [evaluation]

實施例1、2之各切晶黏晶膜具備100℃下之對Si平面180°剝離黏著力處於0.5~5N/10mm之範圍內且23℃下之對Si平面180°剝離黏著力處於3~15N/10mm之範圍內的接著劑層。於經過使用此種切晶黏晶膜進行之擴張步驟所獲得之附接著劑層之半導體晶片中，於黏晶步驟中未產生半導體晶片自接著劑層之浮升，且於黏晶步驟後降溫至室溫之階段亦未產生半導體晶片自接著劑層之浮升。相對於此，於經過使用比較例1、2之各切晶黏晶膜進行之擴張步驟所獲得之附接著劑層之半導體晶片中，有於黏晶步驟或其後之室溫下降狀態下產生半導體晶片自接著劑層之浮升者。 Each of the die-cut die-bonding films of Examples 1 and 2 has a 180° peeling adhesion to the Si plane at 100°C in the range of 0.5~5N/10mm and a 180° peeling adhesion to the Si plane at 23°C in the range of 3~ Adhesive layer within the range of 15N/10mm. In the semiconductor wafer with the adhesive layer obtained through the expansion step using this die-cut die-bonding film, the semiconductor wafer does not rise from the adhesive layer during the die-bonding step, and the temperature decreases after the die-bonding step. The semiconductor chip does not rise from the adhesive layer even when it reaches room temperature. On the other hand, in the semiconductor wafer with the adhesive layer obtained through the expansion step using each of the die-cut die-bonding films of Comparative Examples 1 and 2, there is a problem that occurs during the die-bonding step or when the room temperature is lowered thereafter. The semiconductor chip is lifted from the adhesive layer.

又，實施例1、2之各切晶黏晶膜具備-15℃下之對Si平面180°剝離黏著力為5N/10mm以上之接著劑層。於使用此種切晶黏晶膜進行之冷擴張步驟中，未產生半導體晶片自接著劑層之浮升。相對於此，於使用比較例1、2之各切晶黏晶膜進行之冷擴張步驟中，可見產生自接著劑層之浮升之半導體晶片。 In addition, each of the die-cut die-bonding films of Examples 1 and 2 has an adhesive layer with a 180° peeling adhesion to the Si plane at -15°C of 5 N/10 mm or more. In the cold expansion step using this die-cut die-bonding film, the semiconductor chip does not rise from the adhesive layer. On the other hand, in the cold expansion step using each of the die bonding films of Comparative Examples 1 and 2, the semiconductor wafer was seen to be lifted from the adhesive layer.

10‧‧‧切晶帶 10‧‧‧Cutting ribbon

11‧‧‧基材 11‧‧‧Substrate

12‧‧‧黏著劑層 12‧‧‧Adhesive layer

12a‧‧‧黏著面 12a‧‧‧Adhesive surface

20‧‧‧接著劑層 20‧‧‧Adhesive layer

R‧‧‧照射區域 R‧‧‧Irradiated area

X‧‧‧切晶黏晶膜 X‧‧‧Cut crystal bonding film

Claims

一種切晶黏晶膜，其具備：切晶帶，其具有包含基材及黏著劑層之積層構造；及接著劑層，其與上述切晶帶中之上述黏著劑層可剝離地密接；上述接著劑層具有單層構造，且上述接著劑層對矽平面於100℃、剝離角度180°及剝離速度30mm/分鐘之條件下之第1剝離試驗中表現出0.5~5N/10mm之180°剝離黏著力，且上述接著劑層對矽平面於23℃、剝離角度180°及剝離速度30mm/分鐘之條件下之第2剝離試驗中表現出3~15N/10mm之180°剝離黏著力，且上述接著劑層對寬度10mm及厚度200μm之接著劑層試片於初始夾頭間距離22.5mm、頻率1Hz、動態應變0.005%及升溫速度10℃/分鐘之條件下所測定之損耗正切於25~50℃之範圍內的最大值為0.8以上。 A die-cut die-adhesive film, which is provided with: a die-cut tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer that is releasably and tightly connected to the adhesive layer in the die-cut tape; the above-mentioned The adhesive layer has a single-layer structure, and the adhesive layer exhibits a 180° peeling of 0.5~5N/10mm in the first peeling test under the conditions of 100°C, a peeling angle of 180°, and a peeling speed of 30mm/min. Adhesion, and the above adhesive layer showed a 180° peel adhesion of 3~15N/10mm in the second peel test under the conditions of 23℃, peeling angle 180° and peeling speed 30mm/min, and the above The loss tangent of the adhesive layer measured on an adhesive layer specimen with a width of 10 mm and a thickness of 200 μm under the conditions of an initial distance between clamps of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a heating rate of 10°C/min is between 25 and 50 The maximum value within the range of ℃ is above 0.8.

如請求項1之切晶黏晶膜，其中上述接著劑層對寬度10mm及厚度200μm之接著劑層試片於初始夾頭間距離22.5mm、頻率1Hz、動態應變0.005%及升溫速度10℃/分鐘之條件下所測定之100℃下之損耗彈性模數為0.1~0.5MPa。 For example, the die-cut die-bonding film of claim 1, wherein the above-mentioned adhesive layer is applied to an adhesive layer test piece with a width of 10 mm and a thickness of 200 μm, with an initial inter-chuck distance of 22.5 mm, a frequency of 1 Hz, a dynamic strain of 0.005%, and a temperature rise rate of 10°C/ The loss elastic modulus at 100℃ measured under the conditions of 0.1~0.5MPa.

如請求項1或2之切晶黏晶膜，其中上述接著劑層對矽平面於-15℃、剝離角度180°及剝離速度30mm/分鐘之條件下之第3剝離試驗中表現出5 N/10mm以上之180°剝離黏著力。 Such as the die-cut die-bonding film of claim 1 or 2, wherein the above-mentioned adhesive layer exhibits 5 180° peel adhesion above N/10mm.

如請求項1或2之切晶黏晶膜，其中上述接著劑層於氮氣氛圍、基準重量溫度23℃±2℃及升溫速度10℃/分鐘之條件下之重量減少測定中之100℃下之重量減少率為0.8%以下。 Such as the die-cut die-bonding film of claim 1 or 2, wherein the weight loss of the above-mentioned adhesive layer is measured at 100°C in a nitrogen atmosphere, a basis weight temperature of 23°C ± 2°C, and a heating rate of 10°C/min. The weight reduction rate is less than 0.8%.

如請求項1或2之切晶黏晶膜，其中上述接著劑層包含樹脂及填料，且上述樹脂包含合計50~95質量%之丙烯酸系樹脂及熱硬化性樹脂。 The die-cut die-bonding film of claim 1 or 2, wherein the adhesive layer includes a resin and a filler, and the resin includes a total of 50 to 95% by mass of acrylic resin and thermosetting resin.

如請求項5之切晶黏晶膜，其中上述接著劑層之填料含有比率為35~60質量%。 For example, the die-cut die-bonding film of claim 5, wherein the filler content of the adhesive layer is 35 to 60% by mass.

如請求項5之切晶黏晶膜，其中上述丙烯酸系樹脂之重量平均分子量為500000以下。 For example, the die-cut die-bonding film of claim 5, wherein the weight average molecular weight of the acrylic resin is less than 500,000.

一種半導體裝置製造方法，其包括：第1步驟，其係於如請求項1至7中任一項之切晶黏晶膜中之上述接著劑層之側貼合能夠單片化為複數個半導體晶片之半導體晶圓、或包含複數個半導體晶片之半導體晶圓分割體；第2步驟，其係藉由擴張上述切晶黏晶膜而將上述接著劑層割斷，獲得附接著劑層之半導體晶片；及第3步驟，其係將上述附接著劑層之半導體晶片黏晶於基板或其他半導體晶片之上。 A method for manufacturing a semiconductor device, which includes: a first step of laminating the side of the above-mentioned adhesive layer in the die-cut die-bonding film according to any one of claims 1 to 7 to be able to be singulated into a plurality of semiconductors A semiconductor wafer of a chip, or a semiconductor wafer divided body including a plurality of semiconductor wafers; the second step is to cut the adhesive layer by expanding the die-cutting die-bonding film to obtain a semiconductor wafer with an adhesive layer attached ; and the third step is to adhere the semiconductor wafer with the above-mentioned adhesive layer to the substrate or other semiconductor wafers.

如請求項8之半導體裝置製造方法，其中上述第2步驟中之溫度條件為0℃以下。 The semiconductor device manufacturing method of claim 8, wherein the temperature condition in the second step is below 0°C.