TW202314929A - 具有控制熱隙之托架及蓋體限制配置的晶圓載具總成 - Google Patents
具有控制熱隙之托架及蓋體限制配置的晶圓載具總成 Download PDFInfo
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- TW202314929A TW202314929A TW111132899A TW111132899A TW202314929A TW 202314929 A TW202314929 A TW 202314929A TW 111132899 A TW111132899 A TW 111132899A TW 111132899 A TW111132899 A TW 111132899A TW 202314929 A TW202314929 A TW 202314929A
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title 1
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Abstract
本發明所揭示之晶圓載具總成改良跨其頂面之熱控制以維持高度受控之沈積位置及厚度。
Description
本發明大體上係關於半導體製造技術。更特定言之,本發明係關於一種用於化學氣相沈積(CVD)反應器之具有托架及蓋體限制之晶圓載具總成,該托架及蓋體限制具有控制熱間隙以改良對CVD程序期間之熱均勻性之管理之凸台配置。
特定半導體製造程序可能需要複雜程序來生長磊晶層以創建多層半導體結構用於製造高效能裝置,諸如發光二極體(LED)、雷射二極體、光學偵測器、電力電子器件及場效電晶體。在此程序中,磊晶層透過稱為化學氣相沈積(CVD)之一般程序生長。一種類型之CVD程序稱為金屬有機化學氣相沈積(MOCVD)。在MOCVD中,反應氣體經引入受控環境內之密封反應室,其使反應氣體能夠沈積在基板(通常稱為晶圓)上以生長薄磊晶層。此等製造設備之當前產品線之實例包含TurboDisc®、MaxBright®及EPIK®系列之MOCVD系統及PROPEL® Power GaN MOCVD系統,以上皆由Plainview, N.Y.之Veeco Instruments Inc.製造。
在磊晶層生長期間,控制許多程序參數(諸如溫度、壓力及氣體流速)以在磊晶層中達成所需品質。使用不同材料及程序參數生長不同層。例如,由化合物半導體(諸如III-V族半導體)形成之裝置通常藉由生長一系列不同層來形成。在此程序中,晶圓暴露於反應氣體之組合,通常包含使用烷基源形成之金屬有機化合物,該烷基源包含III族金屬,諸如鎵、銦、鋁及其組合,及氫化物源,其包含V族元素,諸如NH
3、AsH
3、PH
3,或Sb金屬有機物,諸如四甲基銻。一般而言,烷基及氫化物源與載具氣體(諸如N
2及/或H
2)組合,載具氣體不明顯參與反應。在此等程序中,烷基及氫化物源流過晶圓表面並彼此反應以形成通式In
XGa
YAl
ZNAAs
BP
CSb
D之III-V族化合物,其中x+y+z大致等於一,A+B+C+D大致等於一,且x、y、z、A、B、C及D之各者可在零與一之間。在通常稱為「鹵化」或「氯化」程序之其他程序中,III族金屬源係一或多種金屬之揮發性鹵化物,最常見係氯化物,諸如GaCl
2。在其他程序中,使用鉍代替一些或所有其他III族金屬。
用於反應之合適基板可呈具有金屬、半導體及/或絕緣性質之晶圓形式。在一些程序中,晶圓可由藍寶石、氧化鋁、矽(Si)、碳化矽(SiC)、砷化鎵(GaAs)、磷化銦(InP)、砷化銦(InAs)、磷化鎵(GaP)、氮化鋁(AlN)、二氧化矽(SiO
2)及其類似者形成。
在CVD程序腔室中,一或多個晶圓定位於通常稱為晶圓載具之托盤內,使得暴露各晶圓之頂面,藉此使晶圓之頂面在反應室內均勻地暴露於大氣用於半導體材料之沈積。晶圓載具通常以約50至1500 RPM或更高之轉速旋轉。當晶圓載具旋轉時,反應氣體自定位於晶圓載具上游之氣體分配裝置引入腔室。流動氣體向下游流向晶圓載具及晶圓,理想地以層流形式。CVD程序腔室之一個此實例在美國專利案第10,570,510號中揭示,其內容以引用的方式併入本文中。晶圓載具包含具有用於半導體晶圓之袋穴之載具元件,通常稱為基座或台板或基底,其通常由諸如石墨或碳化矽之單一塊狀材料形成。在各種實施例中,晶圓載具可包含定位於基座或台板或基底上方之蓋體限制,以幫助界定袋穴並將晶圓保持在袋穴內。已開發各種組態及形狀之基座/壓板/基底及蓋限制以改良處理,如(例如)美國專利案第8,888,919號中所展示。
在CVD程序期間,晶圓載具藉由通常定位於晶圓載具下方之加熱元件維持在所需高溫。因此,熱自加熱元件傳遞至晶圓載具之底面且透過晶圓載具向上流動至一或多個晶圓。取決於程序,晶圓載具之溫度維持於700°C至1200°C之間。然而,反應氣體由氣體分配裝置在低得多之溫度下引入腔室,通常為200°C,或更低,以抑制氣體之過早反應。
在此環境中,通常期望磊晶生長之一或多種材料維持高度均勻之沈積速率。晶圓或晶圓內之組成層之較均勻厚度導致較少浪費或不可用產品。在併入熱蓋之習知化學氣相沈積系統中,熱自基座/壓板/基底直接傳遞至晶圓基板,同時減少向蓋之熱傳遞。典型系統在晶圓與基板本身之間會有約30°C之溫差,且晶圓內之溫度可在約3°C至4°C之範圍內變化,但即使此等較小變化會影響晶圓均勻性並增加沈積時間。減少廢品伴隨著減少反應器操作時間來產生所需數量之晶圓材料,其可提供可觀經濟效益。另外,減少廢物降低材料成本且需要對廢物進行適當回收或處置。
除提高沈積均勻性之外,避免在基板以外之位置沈積通常係有益的,因為隨時間,堆積會導致晶圓表面之流動路徑發生變化,以及最終堆積至足以沈積材料之厚度會移動及干擾沈積在基底上之樣品。通常,CVD反應器中非設計用於沈積之表面在一定量之運行時間之後經過清潔,且清潔之間的時間越長越好以避免系統停機。
期望提供對晶圓載具之改良,其將提高沈積速率之均勻性,從而歸因於減小熱偏差而導致改良沈積層均勻性,同時亦減少過量沈積堆積。
根據第一實施例,描述用於藉由化學氣相沈積(CVD)在一或多個晶圓上生長磊晶層之系統中使用之晶圓載具總成。該晶圓載具總成包含基底,該基底包含垂直於中心軸線定位之大致平坦底面及大致平行於該底面之頂面。在實施例中,該基底包含複數個托架及自該頂面延伸之複數個平台。熱蓋界定複數個袋穴,各袋穴可含有晶圓基板且經配置成使得當該熱蓋耦合至該基底時該複數個袋穴之各袋穴相鄰於該複數個平台之平台。在實施例中,該熱蓋進一步在該複數個袋穴之各者處界定至少一個凸台。在實施例中,該熱蓋耦合至該基底且由一組蓋限制限制熱引起之運動。該基底之該等托架及該等平台及該熱蓋之該等凸台經配置及經定大小,使得晶圓基板經配置以界定一組熱間隙,該等熱間隙改良該CVD程序期間之熱均勻性管理。
在一些實施例中,該熱蓋經組態以在該凸台處比在該等托架處具有相對較大偏移量。該等托架可為該熱蓋與該基板之間的唯一實體連接。該晶圓載具總成可包含配置於該凸台上之基板。該熱蓋可包含遠離該基底延伸之徑向外部邊緣部分。該基底可包含自該頂面延伸之徑向外部邊緣部分。該晶圓載具總成可包含經組態以耦合該基底及該熱蓋之複數個銷。
以上概述並非旨在描述各繪示實施例或其標的物之每一實施方案。下面之附圖及詳細描述更具體地舉例各種實施例。
本文中所描述之實施例提供數個改良,其中一些或全部可個別或組合地應用於不同實施例,且下文將更詳細描述各者。首先,如本文中所描述之托架及平台及熱蓋凸台之使用提供對其組件之間熱耦合程度之目標設置,包含管理不同晶圓及/或沈積材料之熱耦合之能力。其次,本文中所描述之不同材料及緊固件之使用防止熱蓋在沈積期間(或在數個沈積程序中)之變形,其繼而提高由反應器製造之產品長期之均勻性。第三,本文中所描述之組件之特定配置提高晶圓厚度之均勻性且有助於產生具有薄、嚴格界定層之晶圓。第四,本文中所描述之熱控制結構提供跨基底及熱蓋之頂面之可微調溫度量變曲線,防止在不期望之區域中磊晶生長,且因此減少反應器停機時間及所需清潔時間之量。
在各種組合及組態中,此等改良可降低晶圓彎曲靈敏度。在實施例中,熱間隙及/或耦合之選擇性使用可降低晶圓溫度梯度,使得可將袋穴配置得彼此更靠近。
在整個申請案中,使用化學氣相沈積及類似系統領域之技術者已知之若干術語。在一些情況下,此等術語可能與通常用語中彼等術語之簡單及普通含義不同。如在本申請案中所使用,以下術語界定如下:
基底係配置於反應器中以接收前驅體氣體之結構。基底可具有在其中界定之各種袋穴,晶圓在其上生長。在實施例中,基板定位於袋穴之各者中且晶圓經由反應腔室中之磊晶生長在此等基板上生長。
在晶圓之生長期間,基底通常與晶圓載具總成之剩餘者一起經加熱及旋轉。加熱提供能量以促進入射至晶圓載具總成中之基板上之前驅體氣體之反應,同時旋轉晶圓載具總成促進整個晶圓之生長均勻性。
熱蓋係一種可連接至基底之結構。熱蓋通常覆蓋除袋穴之外之基底之彼等部分,使得前驅體氣體仍可進入彼等袋穴(及/或可定位於其中之晶圓及基底)。
托架及平台儘管在日常使用中具有類似含義,但在本文中經界定為指代不同結構。如本文中所使用,平台係指與托架相比相對較大之凸起部分。平台配置於晶圓或基板下方且界定相對於不在晶圓或基板下方之基底部分之高度。另一方面,托架為組件(例如,基板、熱蓋)提供支撐,但足夠小以提供足夠機械支撐,而不會促進任何顯著位準之熱傳遞。
在整個本申請案中,亦可參考方向。當一個組件被稱為「高於」或「低於」另一組件時,此係指使用此等系統之典型定向。在典型化學氣相沈積系統中,前驅體化學品之噴頭或其他噴灑頭配置於反應腔室之重力頂部。因此,晶圓載具總成在其最上部具有熱蓋。加熱器通常位於基底下方,或在一些實施例中位於晶圓載具總成之基底內。應理解,此方向性語言用於指代典型系統,但替代化學氣相沈積或其他磊晶生長系統可不同地配置。因此,此等方向用於簡化對附圖及常見實施方案之討論且不應解釋為對如本文中所描述之本發明之限制。
圖1及圖2分別係根據實施例之具有熱蓋102之晶圓載具總成100之透視圖及俯視圖。如圖1中所展示,晶圓載具總成100包含複數個袋穴104,其各者對應於由熱蓋102界定之孔。如圖1中最清楚展示,袋穴104之各者界定扁平部分106。扁平部分106可用於化學氣相沈積系統中以在磊晶生長期間將晶圓(未展示)鎖定於對應袋穴104內防止旋轉。
如圖2中所指示,熱蓋102之表面包含六個孔108。如下文更詳細描述,孔108係小開口,緊固銷可透過該等小開口鎖入。另外,圖1及圖2展示用於將熱蓋102緊固至晶圓載具總成100之多個螺絲110。
在本文中所展示之實施例中,銷可與螺絲組合使用以實現所需約束位準。本文中並未展示此概念之所有各種實施方案,但應理解,外部限制通常係螺絲,而徑向內部限制可為成角度之銷或螺絲,以達成所需結果。例如圖3展示使用背面螺絲將蓋從內部固定之「無銷」表現形式(並非如圖4之銷)。藉由在各種實施例中自背面進入,可使用螺絲或銷來最小化或消除頂面上之熱印記。使用銷及螺絲正確定位之任何限制組合可有效地防止導致溫度不均勻之蓋變形。
一般而言,在CVD系統中物質之磊晶生長期間,晶圓載具總成100定位於反應室中且自下方加熱,即自與袋穴104相對之一側加熱。腔室通常處於真空下,自一或多個源引入之一些氣體經引導朝向晶圓載具總成100,使得其流過其頂面。氣體可包含吹掃氣體及一或多個前驅體氣體,其等在加熱時會發生反應以將所需材料沈積在袋穴104中。
在典型CVD程序期間,期望以均勻、可預測及每次運行一致之方式在袋穴104處產生生長。亦可期望藉由提高運行速度或藉由減少系統停機時間來減少創建各晶圓所需之系統時間量。可需要系統停機時間以進行清潔,例如在不期望的情況下當非所要材料沈積發生時。
然而,熱蓋102可能會引入其他變量,該等變量對跨袋穴104產生均勻、可預測及一致之生長之能力產生負面影響。例如,若位於袋穴104上方之晶圓之表面比周圍熱蓋102更熱或更冷(如習知單件晶圓載具之情況),則流過晶圓載具總成100之表面之氣體會展現溫度梯度並導致不均勻沈積。相反地,如本文中所描述,熱蓋可防止此等溫度差異,或可用於藉由調整其組成部分之間的熱間隙來根據需要微調溫度差異。
同樣地,熱蓋102可對前驅體氣體之流動產生實體障礙,其影響袋穴104處之磊晶生長之品質。在沈積期間晶圓載具總成100之旋轉一般能提高均勻性並維持其中之各個袋穴之間的均勻性。然而,熱蓋之變形會影響晶圓載具總成各部分之間的空間,其繼而影響整個裝置之熱傳遞特性。由於此等特性受非所要變形影響,不同區域可更熱或更冷且沈積速率及圖案可受影響。此等圖案導致不均勻沈積及不均勻厚度,且因此通常係非所需(儘管其等可存在於外邊緣或其他選擇位置處,如(例如)在本文中關於圖7A及圖7B所描述)。為此,控制熱蓋102 (圖1至圖3、圖5)之變形以維持相對於代表理想平坦、均勻表面之不明顯呈碟形/碗形或弓形/山頂形之大致平坦、均勻表面係有益的。
圖3係圖1及圖2之晶圓載具總成100及熱蓋102之分解圖。在分解圖中,熱蓋102自晶圓載具總成100分離開以展示將熱蓋102固定至基底之各種螺絲110。應理解,在各種實施例中,螺絲110之數目及配置可變化。另外或替代地,緊固件之類型可在實施例之間變化,使得螺絲110可包含對應螺母或墊圈,或可為鉚釘、扣環或其他類似結構。
圖4A及圖4B展示根據實施例之可用於防止晶圓載具之熱蓋變形之結構。圖4A展示經組態以與熱蓋(未展示)接合之基底200。如圖4A中所展示,存在配置於基底之中心周圍之若干突起結構,由標註4B指示。
圖4B更詳細展示此區域。在區域4B內,存在對習知晶圓載具總成改良之兩種不同類型之結構。此等之第一者係托架202,且第二者係銷204。在整個晶圓載具總成100中存在複數個托架202及銷204兩者,如圖3中所展示。
使用晶圓載具總成時,托架202為對應於其熱蓋提供支撐。藉由將托架202配置於基底200之其中將配置熱蓋(未展示)之表面周圍,可最小化自基底200至熱蓋之傳導熱傳遞量。此提供顯著益處,因為熱蓋之溫度因此可保持顯著低於袋穴之溫度。因此,托架202降低熱蓋之溫度,且可選擇托架202之高度以在使用期間微調跨晶圓載具總成及熱蓋之頂面之溫度量變曲線。藉由使托架202相對較高,傳遞至熱蓋之熱量減少,使得較高托架202使得熱蓋之頂面更冷。下文將參考圖5更詳細描述使用托架之熱管理。
圖5中之整個晶圓載具總成可用作藉由CVD或類似磊晶生長系統在一或多個晶圓上生長磊晶層之系統。晶圓載具總成100圍繞中心軸線配置,如圖1至圖3中所展示且界定大致平坦底面,該底面垂直於中心軸線定位。大致平行於底面(圖1至圖3)之頂面跨整個晶圓載具總成100延伸,且複數個托架(例如202)及複數個平台(例如214)自其向上延伸。熱蓋102界定複數個袋穴(參閱圖1至圖3),且熱蓋102經組態以由緊固件(例如,圖1至圖3之110)耦合至基底。複數個袋穴經配置成使得當熱蓋耦合至基底時,複數個袋穴之各袋穴相鄰於複數個平台214之平台(參閱圖3)。熱蓋102進一步在可支撐基板112之複數個袋穴之各者處界定凸台L。托架202、熱蓋102之尺寸及平台114經定大小使得配置於凸台上L之基板112經配置成比熱蓋102距頂面(在尺寸A處)更靠近其對應平台114 (在尺寸C處)。銷204用於在使用期間將基底200固持至其對應熱蓋102。銷204以一定角度自基底200延伸以防止基底200與對應熱蓋102之間的相對運動,如關於圖6更詳細描述。
銷204可防止熱蓋在磊晶生長程序期間或之後變形。參考圖1至圖3,可見熱蓋102包含具有相對較薄截面之若干部分。在晶圓之生長期間,熱蓋102之旋轉導致沿熱蓋102之主體之向心力。另外,在熱蓋102上生長之任何材料堆積會增加此施加力。
此外,取決於正在生長之材料,材料本身會產生力,其產生熱蓋之平面變形。對於一些材料,由材料產生之力使熱蓋朝向凹形「碗」配置彎曲,其中中心最低,且徑向最外邊緣相對於蓋平面之剩餘者向上推動。對於其他材料,由材料產生之力使熱蓋向凸形「山頂」配置彎曲,其中中心升高,且徑向最外邊緣相對於蓋平面之剩餘者向下推動。此等「碗」及「山頂」平面變形形狀兩者係不期望的,因為其等影響中心與熱蓋相對於晶圓載具總成之加熱基底之邊緣之間的距離。另外,其等會影響前驅體氣體穿過由基板/晶圓、基座及熱蓋形成之表面之流動路徑,或其等會影響基板/晶圓、基座及熱蓋之間的間隙距離及對應熱梯度。
銷204與螺絲(例如,圖3之螺絲110)協作防止此平面變形。如圖3中所展示,螺絲110實質上朝向晶圓載具總成100及熱蓋102之徑向最外邊緣配置。如本文中所使用,「實質上」係指足夠靠近該徑向最外邊緣以防止在常規磊晶生長及旋轉條件下熱蓋102向上及遠離晶圓載具總成100之非所要彎曲。同樣地,銷204藉由限制熱蓋102遠離晶圓載具總成100之運動來防止「山頂」變形。
在實施例中,用於維持本文中所描述之組件之間的相對固定關係之銷204及螺絲、螺母或其他緊固件可由相似材料製成,以防止歸因於熱膨脹係數之差異之應力或移動。例如,在一個實施例中,螺絲(110,圖1至圖3)及銷(204,圖4B)由碳-碳製成,熱蓋102亦如此。在其他實施例中,銷204可由鉬或能夠承受化學氣相沈積系統內處理條件之任何材料製成。在一些實施例中,晶圓載具總成(例如100)可由具有類似熱膨脹係數之材料製成,諸如碳化矽。
如上文所描述,螺絲、銷及托架可用於維持本文中所描述之系統之各種組件之間的所需實體間距。圖5展示實施例之三個組件之簡化截面圖:晶圓載具總成100、熱蓋102及基板112。
如圖5中所展示,晶圓載具總成100包含機械支撐熱蓋102之托架202。在典型實施例中,可有支撐熱蓋102之複數個托架202。熱蓋102繼而機械支撐基板112,其上可生長晶圓。
除托架202之外,晶圓載具總成100亦界定平台214。在實施例中,平台214可經定大小且經成形以與基板112實質上相同。例如,如圖3中所展示,托架自晶圓載具總成100之剩餘者在朝向熱蓋102之方向上延伸。
圖5描繪三個不同尺寸,標記為A、B及C。此等尺寸之各者係可根據需要微調以產生熱量變曲線。藉由調整托架202之高度,可修改尺寸A。尺寸A影響自晶圓載具總成100至熱蓋102之傳導熱傳遞量。熱蓋102可經成形為在支撐基板112之部分處自基底200具有相對較大偏移,如尺寸B中所展示。藉由增加此距離,減少自晶圓載具總成100經由熱蓋102至基板112之熱傳遞。最後,藉由調整平台114之高度,可調整尺寸C。增加尺寸C導致自晶圓載具總成100至基板112之熱傳遞減少,而較低尺寸C將增加熱傳遞。
尺寸D對應於在熱蓋102與晶圓載具總成之基底200之間存在間隙B之切口部分。換言之,尺寸D係熱蓋102之支撐部分朝向平台214延伸之量。再換言之,尺寸D係熱蓋102之主體自平台214縮回之量。尺寸D及其對應尺寸B提供機械功能(即,支撐基板112),但亦決定整個系統之熱特性。如上文所描述,熱蓋102越靠近基底200,彼等兩個組件之間的熱耦合位準越高。藉由增加D或B,熱耦合位準降低。相反地,藉由減小尺寸B或尺寸D,基底200與熱蓋102之間的熱耦合位準增加。因此可調整、修改及微調此等尺寸以在基板112之邊緣處產生所需熱量變曲線。
應理解,代替具有線性尺寸B及D之方形切口,其他熱蓋102可具有斜切、倒角或其他形狀之底面以選擇性地增強或減少熱蓋102與基底200、基板112及平台214之間的熱傳遞。一般而言,期望跨頂面S維持恆定溫度,包含在基板112與熱蓋102之間的介面處,但在一些情況下可需要邊緣效應,使得基板112之熱邊緣或冷邊緣在特殊應用中提供優勢。
在許多系統中,較佳地使基板112比熱蓋102之頂面更熱,且亦期望基板112在頂面處具有非常均勻溫度。圖5中之配置依若干方式實現此目標。
首先,基板112與晶圓載具總成100之間沒有直接實體接觸。圖5之方案中唯一傳導熱傳遞係透過托架202將熱自晶圓載具總成100傳導至熱蓋102。歸因於托架之小大小及數目(參閱圖4A),即使此傳導熱傳遞亦非常有限。因此,圖5中所描繪之系統中之主要熱傳遞機構不是傳導,而是輻射及對流。另外,大多數化學氣相沈積系統在真空環境中運行,此亦減少對流熱傳遞。
在此環境中,兩個組件之間的距離對其等之間傳遞之熱量具有很大影響。因此,調整尺寸A、B、C及/或D之一或多者可確保熱蓋102之頂面處之溫度較基板112之頂面處之溫度相對較低,其通常係可期望。藉由調整晶圓載具總成100之加熱量、尺寸A、B、C及/或D及構成各部件之材料,可達成幾乎任何期望之頂面溫度量變曲線。
應注意,平台114與基板112之間不存在托架202,因此熱蓋102與基板112之間不會發生傳導熱傳遞。傳導熱傳遞會產生溫度變化,因此消除此模式熱接觸在基板112之頂面溫度均勻性方面提供一些益處。
在磊晶生長期間,晶圓載具總成100處之溫度足夠熱以引起前驅體氣體與對應磊晶生長之間的相互作用。然而,晶圓載具總成100與熱蓋102及/或基板112之間的流體流動量非常低。因此,此等組件之間的生長量亦很低,因為沒有足夠新鮮前驅體氣體來支持持續生長。此外,在典型循環中,首先將腔室帶入真空條件,此後將吹掃氣體引入腔室。因此,晶圓載具總成100與熱蓋102及/或基板112之間的大部分空間填充有吹掃氣體,而非能夠支撐沈積之前驅體材料。
圖6係將熱蓋102連接至基板100之銷204之詳細視圖。如圖6中所展示,銷204傾斜以防止熱蓋102被抬離基板100。如圖5明顯看出,此提升會影響尺寸A、B及C,使得此等尺寸之各者朝向晶圓載具總成100之中心較大且在其徑向外部部分處較小。
圖7A及圖7B展示用於在其徑向外部邊緣處磊晶生長之系統之兩個實施例。如美國專利案第8,888,919號中所描述,例如,凸起或傾斜徑向外部邊緣可為經引導穿過晶圓載具總成之前驅體氣體提供更層流流動路徑。如圖7A及圖7B中所展示,此特徵可藉由將此徑向外部邊緣構建為晶圓載具總成基底之部分或作為熱蓋之部分來利用上文所描述之實施例來實施。
如圖7A中所展示,晶圓載具總成300固持熱蓋302,該熱蓋302繼而固持基板304。晶圓載具總成300包含向上傾斜之徑向外部邊緣部分306。此成角度之部分可在沈積期間維持更佳前驅體氣體穿過基板304之層流。如圖7A中進一步所展示,相對較小托架308支撐熱蓋302,而較大平台310延伸至幾乎接觸基板304。
圖7B展示類似替代實施例。如圖7B中所展示,晶圓載具總成400固持熱蓋402,熱蓋402繼而固持基板404。熱蓋402包含向上傾斜之徑向外部邊緣部分406。此成角度之部分可在沈積期間維持更佳前驅體氣體穿過基板404之層流。如圖7B中進一步所展示,相對較小托架408支撐熱蓋402,而較大平台410延伸至幾乎接觸基板404。
如上文所描述,托架(例如202)及平台(例如114)可經定大小且經配置以設定整個系統中熱耦合之程度。依此方式,頂面(及發生顯著磊晶生長之唯一表面)可具有旨在導致均勻及有針對性生長之溫度量變曲線。即,各層可以高位準厚度均勻性生長且主要在基板(例如112)上而非在其他地方(諸如在熱蓋102上)生長。此外,本文中所描述之緊固件經配置及由材料製成,使得由熱膨脹及收縮引起之力或由沈積材料本身引起之力不會顯著影響各個組件之間的間隔距離。因為間隔距離沒有受顯著影響,所以熱傳遞亦沒有受顯著影響。
總而言之,此等改良對於經設計用於製造薄多層結構之系統特別有益。此等結構通常具有很高廢品率或報廢率,因為厚度不均勻性對於一些應用而言係不可接受的。維持均勻溫度(及因此厚度)可減少浪費或廢料且因此在商業上係有利的。
本文已描述系統、裝置及方法之各種實施例。此等實施例僅藉由實例給出並不旨在限制主張發明之範疇。此外,應瞭解,已描述之實施例之各種特徵可以各種方式組合以產生許多額外實施例。此外,儘管已描述各種材料、尺寸、形狀、組態及位置等等用於與所揭示之實施例一起使用,但在不超出主張發明之範疇之情況下,可使用除所揭示之彼等之外之其他材料。
相關領域之一般技術者將認識到,本文之標的物可包括比上述任何個別實施例中所繪示之更少特徵。本文中所描述之實施例並不意謂對可組合其標的物之各種特徵之方式之詳盡呈現。據此,實施例並非係相互排斥之特徵組合;相反地,如一般技術者所理解,各種實施例可包括選自不同個別實施例之不同個別特徵之組合。此外,關於一個實施例描述之元件可在其他實施例中實施,即使當沒有在此等實施例中描述時,除非另有說明。
儘管從屬請求項可在申請專利範圍中提及與一或多個其他請求項之特定組合,但其他實施例亦可包含從屬請求項與各其他從屬請求項之標的物之組合或一或多個特徵與其他從屬或獨立請求項之組合。在本文中提出此等組合,除非聲明不意欲使用特定組合。
藉由引用以上文檔之任何併入受限,使得不併入與本文之明確揭示內容相反之標的物。上述文檔之任何以引用方式併入進一步受限,使得該等文檔中包含之申請專利範圍不以引用的方式併入本文中。上述文檔之任何以引用方式併入進一步受限,使得文檔中提供之任何定義不以引用方式併入本文中,除非明確包含於本文中。
為解釋申請專利範圍,明確規定35 U.S.C.§112(f)除非在申請專利範圍中引用特定術語「方式」或「步驟」,否則不援引。
4B:區域
100:晶圓載具總成
102:熱蓋
104:袋穴
106:扁平部分
108:孔
110:螺絲
112:基板
114:平台
200:基底
202:托架
204:銷
214:平台
300:晶圓載具總成
302:熱蓋
304:基板
306:徑向外部邊緣部分
308:托架
310:平台
402:熱蓋
404:基板
406:徑向外部邊緣部分
408:托架
410:平台
A:尺寸
B:尺寸
C:尺寸
D:尺寸
L:凸台
S:頂面
考慮到以下結合附圖對各種實施例之詳細描述,可更全面地理解本發明之標的物,其中:
圖1係根據實施例之晶圓載具總成之透視圖。
圖2係圖1之晶圓載具總成之俯視圖。
圖3係圖1及圖2之晶圓載具總成之分解圖。
圖4A及圖4B係根據實施例之晶圓載具總成之詳細視圖。
圖5係根據實施例之晶圓載具總成之截面詳細視圖。
圖6係根據實施例之銷之截面圖。
圖7A及圖7B係根據兩個實施例之在晶圓載具總成之徑向外部邊緣處之袋穴之截面圖。
儘管各種實施例可經各種修改及替代形式,但其細節已在附圖中藉由實例展示且將詳細描述。然而,應理解,其意圖不在於將主張發明限制於所描述之特定實施例。相反地,其意圖係涵蓋落入由申請專利範圍界定之標的物之精神及範疇內之所有修改、等價物及替代物。
100:晶圓載具總成
102:熱蓋
104:袋穴
106:扁平部分
Claims (9)
- 一種用於藉由化學氣相沈積(CVD)在一或多個晶圓上生長磊晶層之系統中使用之晶圓載具總成,該晶圓載具總成包括: 基底,其包含大致平坦底面及大致平行於該底面之頂面,其中該頂面進一步包含複數個托架及在該頂面上方延伸之複數個平台;及 熱蓋,其界定複數個袋穴,其中該熱蓋經組態以由至少一個緊固件耦合至該基底且該複數個袋穴經配置成使得當該熱蓋由該基底之該複數個托架支撐時,該複數個袋穴之各袋穴與該複數個平台之對應平台對準,該熱蓋進一步界定靠近承載用於該袋穴之該晶圓之該複數個袋穴之各袋穴具有減小厚度之邊緣部分; 其中該晶圓載具之該等托架及該等平台及該熱蓋之該邊緣部分經定大小使得界定一組熱控制間隙,其沿該晶圓載具總成之該頂面維持所需熱量變曲線。
- 如請求項1之晶圓載具總成,其中定位於該複數個袋穴之袋穴中之晶圓以小於該等托架相對於該頂面之高度之距離經配置於該袋穴之該對應平台上方。
- 如請求項1之晶圓載具總成,其中該熱蓋之該邊緣部分經成形為具有矩形切口部分。
- 如請求項1之晶圓載具總成,其中該等托架係該熱蓋與該基板之間的唯一實體連接。
- 如請求項1之晶圓載具總成,其中該熱蓋包含遠離該基底延伸之徑向外部邊緣部分。
- 如請求項1之晶圓載具總成,其中該基底包含自該頂面延伸之徑向外部邊緣部分。
- 如請求項1之晶圓載具總成,其進一步包括經組態以耦合該基底及該熱蓋之複數個銷。
- 如請求項7之晶圓載具總成,其中該複數個銷以相對於該晶圓載具總成之該頂面之一角度***。
- 如請求項1之晶圓載具總成,其中該所需熱量變曲線係均勻的。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/462,990 | 2021-08-31 | ||
US17/462,990 US20230060609A1 (en) | 2021-08-31 | 2021-08-31 | Wafer carrier assembly with pedestal and cover restraint arrangements that control thermal gaps |
Publications (1)
Publication Number | Publication Date |
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TW202314929A true TW202314929A (zh) | 2023-04-01 |
Family
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TW111132899A TW202314929A (zh) | 2021-08-31 | 2022-08-31 | 具有控制熱隙之托架及蓋體限制配置的晶圓載具總成 |
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US (1) | US20230060609A1 (zh) |
EP (1) | EP4396397A1 (zh) |
KR (1) | KR20240056485A (zh) |
CN (1) | CN117881819A (zh) |
TW (1) | TW202314929A (zh) |
WO (1) | WO2023034226A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TW202414658A (zh) * | 2022-09-23 | 2024-04-01 | 美商維克儀器公司 | 具有改良之均溫性之晶圓載具總成 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101405299B1 (ko) * | 2007-10-10 | 2014-06-11 | 주성엔지니어링(주) | 기판 지지대 및 이를 구비하는 박막 증착 장치 |
US8486726B2 (en) * | 2009-12-02 | 2013-07-16 | Veeco Instruments Inc. | Method for improving performance of a substrate carrier |
US8562746B2 (en) * | 2010-12-15 | 2013-10-22 | Veeco Instruments Inc. | Sectional wafer carrier |
US20120234229A1 (en) * | 2011-03-16 | 2012-09-20 | Applied Materials, Inc. | Substrate support assembly for thin film deposition systems |
TWI650832B (zh) * | 2013-12-26 | 2019-02-11 | 維克儀器公司 | 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具 |
US20190295880A1 (en) * | 2018-03-26 | 2019-09-26 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
-
2021
- 2021-08-31 US US17/462,990 patent/US20230060609A1/en active Pending
-
2022
- 2022-08-29 WO PCT/US2022/041914 patent/WO2023034226A1/en active Application Filing
- 2022-08-29 EP EP22865387.9A patent/EP4396397A1/en active Pending
- 2022-08-29 CN CN202280058976.7A patent/CN117881819A/zh active Pending
- 2022-08-29 KR KR1020247002486A patent/KR20240056485A/ko unknown
- 2022-08-31 TW TW111132899A patent/TW202314929A/zh unknown
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WO2023034226A1 (en) | 2023-03-09 |
CN117881819A (zh) | 2024-04-12 |
US20230060609A1 (en) | 2023-03-02 |
KR20240056485A (ko) | 2024-04-30 |
EP4396397A1 (en) | 2024-07-10 |
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