TW202312291A - Manufacturing method of semiconductor products, workpiece integration devices, film laminate, and semiconductor products - Google Patents
Manufacturing method of semiconductor products, workpiece integration devices, film laminate, and semiconductor products Download PDFInfo
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本發明係有關一種用以製造在以基板為例的工件安裝有半導體元件而成的半導體裝置之半導體裝置的製造方法、工件一體化裝置、薄膜積層體、及半導體裝置。The present invention relates to a semiconductor device manufacturing method for manufacturing a semiconductor device in which a semiconductor element is mounted on a work such as a substrate, a work-integrated device, a thin film laminate, and a semiconductor device.
在使以使用有聚矽氧半導體的IC為例的半導體元件安裝(連接)於基板的方法方面，採用使基板的導體部分對應於半導體元件的電極位置並將兩者連接的方法(舉一例為覆晶接合法)。就該安裝方法而言，在多數個半導體元件各自形成焊料凸塊後，隔介焊料凸塊使基板與多數個半導體元件接觸。In terms of the method of mounting (connecting) a semiconductor element such as an IC using a polysilicon semiconductor on a substrate, a method of making the conductor portion of the substrate correspond to the electrode position of the semiconductor element and connecting the two (for example, flip-chip bonding method). In this mounting method, after the solder bumps are formed on each of the plurality of semiconductor elements, the substrate is brought into contact with the plurality of semiconductor elements through the solder bumps.
之後，透過使用回焊爐等進行加熱將焊料熔融，使半導體元件被裝設於基板。然後，透過將裝設於基板上的半導體元件以樹脂覆蓋並封裝以製造半導體裝置。作為封裝半導體元件的工序的一例，在將裝設在基板上的半導體元件配置於模具的內部後，於模具內填充樹脂，透過將該樹脂加熱熔融、硬化而將半導體元件以樹脂封裝。After that, the solder is melted by heating using a reflow furnace or the like, so that the semiconductor element is mounted on the substrate. Then, a semiconductor device is manufactured by covering and encapsulating the semiconductor element mounted on the substrate with a resin. As an example of the process of encapsulating a semiconductor element, after arranging a semiconductor element mounted on a substrate in a mold, a resin is filled in the mold, and the resin is heated to melt and harden to encapsulate the semiconductor element with a resin.
於製造此種半導體裝置的情況，在使焊料加熱熔融的工序或使樹脂加熱熔融、硬化的工序中，容易發生基板因熱而變形，在基板發生翹曲的問題。當在基板發生翹曲時，半導體元件與基板之間的尺寸會因為半導體元件的位置而不同，發生半導體元件與基板之接觸不良。又，當在基板發生翹曲的狀態下進行樹脂封裝時，因為基板的變形等使基板位置精度惡化，會導致成形時樹脂漏洩等之樹脂封裝不良。When manufacturing such a semiconductor device, in the process of heating and melting the solder or the process of heating and melting and hardening the resin, the substrate is easily deformed by heat and warpage occurs on the substrate. When the substrate is warped, the dimension between the semiconductor element and the substrate will vary depending on the position of the semiconductor element, and poor contact between the semiconductor element and the substrate will occur. In addition, when resin sealing is performed in a state where the substrate is warped, the positional accuracy of the substrate is deteriorated due to deformation of the substrate, etc., resulting in resin sealing defects such as resin leakage during molding.
在半導體裝置的製造過程中為了防止因熱所致之基板的翹曲，在習知技術中提案有如下的構成。作為第1習知方法，可舉出以使半導體元件接觸基板後包圍半導體元件的方式在基板上搭載翹曲矯正治具，再透過藉由翹曲矯正治具的自重來固定半導體元件周圍的基板以防止基板翹曲的方法(參照專利文獻1)。In order to prevent the warpage of the substrate due to heat in the manufacturing process of the semiconductor device, the following configurations have been conventionally proposed. As a first known method, a warpage correction jig is mounted on the substrate so that the semiconductor element touches the substrate and surrounds the semiconductor element, and then the substrate around the semiconductor element is fixed by the weight of the warpage correction jig. A method for preventing substrate warpage (refer to Patent Document 1).
而且該專利文獻1中提案有如下之構成，即在基板之下載置磁鐵，透過使用不鏽鋼材作為翹曲矯正治具，藉由在磁鐵與不鏽鋼製的治具之間發生的磁力來固定半導體元件周圍的基板。In addition, this
在防止因熱所致之基板的翹曲之第2習知方法方面，提案有如下之方法，即在使半導體元件接觸基板後，在將基板的左右兩端以夾爪夾持住並支持的狀態下，將基板朝基板伸長的方向拉伸(參照專利文獻2)。 [先前技術文獻] [專利文獻] In the second conventional method of preventing warping of the substrate due to heat, a method has been proposed in which the left and right ends of the substrate are held and supported by grippers after the semiconductor element is brought into contact with the substrate. state, the substrate is stretched in the direction in which the substrate is stretched (see Patent Document 2). [Prior Art Literature] [Patent Document]
[專利文獻1]日本特開2013-232582號公報 [專利文獻2]日本特開2017-087551號公報 [Patent Document 1] Japanese Unexamined Patent Publication No. 2013-232582 [Patent Document 2] Japanese Patent Laid-Open No. 2017-087551
[發明欲解決之課題][Problem to be solved by the invention]
然而，上述習知方法中有如下的問題。亦即，近年來基板的薄型化急速地進展。就習知的方法而言，在防止基板的翹曲時，會有較大的力作用於基板。因此，當將習知的方法應用於薄型基板時，擔心有薄型化的基板無法承受應力而在基板發生破裂、缺口或變形等之損傷的問題。However, the above conventional methods have the following problems. That is, in recent years, the thinning of the substrate has rapidly progressed. As far as the conventional method is concerned, when preventing the warping of the substrate, a relatively large force acts on the substrate. Therefore, when the conventional method is applied to a thin substrate, there is a concern that the thinned substrate cannot withstand the stress and damage such as cracks, cracks or deformation occurs on the substrate.
又，以習知的方法而言，需要配設翹曲矯正治具以對基板施加壓力，再將翹曲矯正治具除去之一連串的工序，或以夾具(clamp)把持基板並對基板施加拉力，然後解除利用夾具(clamp)把持基板之一連串的工序。由於該等一連串的工序需要時間，故習知的方法也會發生難以提升半導體裝置的製造效率之問題。Also, in the conventional method, it is necessary to configure a warpage correction jig to apply pressure to the substrate, and then remove the warpage correction jig for a series of processes, or use a clamp to hold the substrate and apply tension to the substrate. , and then release one of the series of steps of holding the substrate with a clamp. Since these series of processes take time, the conventional method also has the problem that it is difficult to improve the manufacturing efficiency of semiconductor devices.
本發明乃有鑒於此種情事而研創者，主要目的為：提供一種在將半導體元件安裝於基板以製造半導體裝置時，既可避免基板的損傷又可防止在基板發生翹曲，而且能提升半導體裝置的製造效率之半導體裝置的製造方法、工件一體化裝置、薄膜積層體、及半導體裝置。 [用以解決課題之手段] The present invention is developed in view of this situation, and its main purpose is to provide a method that can avoid damage to the substrate and prevent warping of the substrate when semiconductor devices are mounted on the substrate to manufacture semiconductor devices, and can improve the performance of the semiconductor device. A manufacturing method of a semiconductor device, a work-integrated device, a thin film laminate, and a semiconductor device for device manufacturing efficiency. [Means to solve the problem]
本發明為達成此種目的而採取如下的構成。 亦即，本發明係一種半導體裝置的製造方法，該半導體裝置具有以封裝用樹脂封裝被安裝在工件的半導體元件而成之構造，其特徵為， 具備：工件載置過程，其在薄膜積層體的保持薄膜側載置前述工件，該薄膜積層體積層有將前述工件保持在支持體之上的前述保持薄膜； 元件安裝過程，其在載置於前述薄膜積層體的前述工件安裝前述半導體元件； 封裝過程，其以前述封裝用樹脂封裝被安裝在前述工件的前述半導體元件；及 脫離過程，其使前述工件與以前述封裝用樹脂封裝的前述半導體元件從前述薄膜積層體脫離。 The present invention adopts the following configurations to achieve the above object. That is, the present invention is a method of manufacturing a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is encapsulated with a sealing resin, characterized in that, It has: a workpiece loading process, which places the aforementioned workpiece on the side of the holding film of the thin film laminated body, and the thin film stacked volume layer has the aforementioned holding film that holds the aforementioned workpiece on the support body; An element mounting process of mounting the aforementioned semiconductor element on the aforementioned work placed on the aforementioned thin film laminate; an encapsulation process of encapsulating the aforementioned semiconductor element mounted on the aforementioned workpiece with the aforementioned encapsulating resin; and A detachment process of detaching the aforementioned workpiece and the aforementioned semiconductor element encapsulated with the aforementioned encapsulating resin from the aforementioned thin film laminate.
(作用・效果)根據該構成，於工件載置過程中，於薄膜積層體的保持薄膜側載置工件，該薄膜積層體係保持工件的保持薄膜被積層在支持體之上而成。亦即作為將半導體元件安裝於工件的前階段，在薄膜積層體中的保持薄膜側載置工件。(Function and Effect) According to this configuration, the workpiece is placed on the holding film side of the thin-film laminated body during the workpiece loading process, and the holding film for holding the workpiece in this thin-film laminated system is laminated on the support. That is, as a pre-stage of mounting the semiconductor element on the workpiece, the workpiece is placed on the side of the holding film in the thin film laminate.
保持薄膜係保持工件者，透過在薄膜積層體中的保持薄膜側載置工件以擔保工件的平坦性。亦即在安裝半導體元件的工序及封裝半導體元件的工序等中，透過保持薄膜可防止因加熱等所致之工件變形而使工件的一部份從薄膜積層體浮起的情形。因此，可更確實地防止發生半導體元件的安裝不良或半導體元件的安裝位置偏移之情形。The holding film is used to hold the workpiece, and the flatness of the workpiece is ensured by placing the workpiece on the side of the holding film in the film laminate. That is, in the process of mounting semiconductor elements and the process of packaging semiconductor elements, etc., the holding film can prevent a part of the workpiece from floating from the thin film laminate due to deformation of the workpiece due to heating or the like. Therefore, it is possible to more reliably prevent the occurrence of defective mounting of the semiconductor element or misalignment of the mounting position of the semiconductor element.
又，保持薄膜係接觸工件的寬廣範圍而將工件保持。亦即保持薄膜係透過對工件的寬廣範圍均等地作用保持力以防止工件的變形。因此，可更確實地避免因使以推壓或把持為例之大的物理的壓力作用於工件的狹窄範圍，而在該物理的壓力所作用的部分等中發生工件破損的事態。Also, the holding film contacts a wide range of the workpiece to hold the workpiece. That is, the holding film prevents deformation of the workpiece by applying a holding force equally to a wide range of the workpiece. Therefore, it is possible to more reliably avoid a situation where a large physical pressure such as pushing or gripping is applied to a narrow range of the workpiece and the workpiece is damaged in the portion to which the physical pressure acts.
然後，透過在薄膜積層體的保持薄膜側載置工件之單純操作，使防止工件的變形之保持力對工件作用。亦即，可大幅縮短防止工件的變形之工序所需的時間。因此，既可提升半導體裝置的製造效率又能防止工件的變形。Then, by simply placing the workpiece on the side of the holding film of the film laminate, a holding force for preventing deformation of the workpiece acts on the workpiece. That is, the time required for the process of preventing deformation of the workpiece can be greatly shortened. Therefore, the manufacturing efficiency of the semiconductor device can be improved and the deformation of the workpiece can be prevented.
又，較佳為，上述的發明中，將於前述脫離過程中前述工件及前述半導體元件已脫離後之前述薄膜積層體，再利用於下次進行的前述工件載置過程。Furthermore, it is preferable that in the above invention, the thin film laminate from which the workpiece and the semiconductor element are detached during the detachment process is reused in the next workpiece mounting process.
(作用・效果)根據該構成，因為保持薄膜係薄膜狀，所以可避免在將半導體裝置中從薄膜積層體分離時保持薄膜的構成材料的一部份剝落成為殘渣而附著於工件的事態。因此，可將於第1次的半導體裝置的製造工序的脫離過程從半導體裝置分離的薄膜積層體，再度利用於在下次(第2次)進行的工件載置過程。亦即在第2次以後的半導體裝置的製造工序中無需製造薄膜積層體，因此可縮短大量生産半導體裝置所需的時間並可大幅減低成本。又，因為可減少支持體及保持薄膜之廢棄量，所以亦可減低對環境的負荷。(Function and Effect) According to this configuration, since the thin film is maintained in the form of a thin film, it is possible to avoid a situation where a part of the constituent material of the thin film is peeled off and becomes a residue and adheres to the workpiece when the semiconductor device is separated from the thin film laminate. Therefore, the thin film laminate separated from the semiconductor device in the detachment process of the first semiconductor device manufacturing process can be reused in the next (second) workpiece placement process. That is, since it is not necessary to manufacture a thin film laminate in the second and subsequent semiconductor device manufacturing steps, the time required for mass production of semiconductor devices can be shortened and the cost can be greatly reduced. In addition, since the amount of waste of the support body and the holding film can be reduced, the load on the environment can also be reduced.
又，較佳為，上述的發明中，前述保持薄膜係以含有聚矽氧或氟化合物的多孔質體構成。Also, preferably, in the above invention, the holding film is formed of a porous body containing polysiloxane or a fluorine compound.
(作用・效果)根據該構成，透過在保持薄膜載置工件，以在成為多孔質狀的保持薄膜的表面吸附工件之方式產生保持的力。亦即透過工件被載置於薄膜積層體，在從工件朝向保持薄膜的方向產生吸附力。工件變形使得工件的一部份試圖從薄膜積層體浮起的動作係被該吸附力所阻礙。因此，在用以製造半導體裝置之各工序中，因為可維持工件密接於保持薄膜的平坦形狀，所以可提升安裝半導體元件的位置之精度與半導體元件及工件的連接精度。(Function and Effect) According to this configuration, when the workpiece is placed on the holding film, the holding force is generated so that the workpiece is attracted to the surface of the porous holding film. That is, when the workpiece is placed on the thin film laminate, an adsorption force is generated in the direction from the workpiece toward the holding film. The workpiece deforms so that a part of the workpiece attempts to float from the thin film laminate is hindered by the suction force. Therefore, in each process for manufacturing a semiconductor device, since the workpiece can be maintained in a flat shape in close contact with the holding film, the accuracy of the position where the semiconductor element is mounted and the connection accuracy between the semiconductor element and the workpiece can be improved.
又，較佳為，上述的發明中，前述薄膜積層體構成為在俯視中比前述工件還小，前述工件載置過程係以前述工件的外周部突出於前述薄膜積層體的外側之方式將前述工件載置於前述薄膜積層體。Also, preferably, in the above-mentioned invention, the thin film laminate is configured to be smaller than the workpiece in plan view, and the workpiece mounting process is such that the outer peripheral portion of the workpiece protrudes from the outer side of the thin film laminate. The workpiece is placed on the aforementioned thin film laminate.
(作用・效果)根據該構成，以工件的外周部突出於薄膜積層體的外側之方式將該工件載置於薄膜積層體。因此，在將半導體元件以封裝材封裝之際，透過將工件的外周部從上下以模具等夾入，可將半導體元件的周圍設成密閉狀態。從該上下以模具夾入的壓力係設成高於樹脂封裝壓力，在薄膜積層體被以來自上下的模具夾入的情況，擔心會有保持薄膜一部分極度凹陷而難以再利用薄膜積層體的情形。使工件的外周部突出於薄膜積層體的外側，透過僅將突出的工件外周部以來自上下的模具夾入，可避免該擔心。(Function and Effect) According to this configuration, the workpiece is placed on the thin film laminate such that the outer peripheral portion of the workpiece protrudes outside the thin film laminate. Therefore, when sealing the semiconductor element with the encapsulating material, the periphery of the semiconductor element can be made into a sealed state by sandwiching the outer peripheral portion of the work from above and below with a mold or the like. The clamping pressure from the upper and lower molds is set higher than the resin sealing pressure. When the film laminate is sandwiched by the upper and lower molds, there is a concern that a part of the remaining film will be extremely depressed and it will be difficult to reuse the film laminate. . This problem can be avoided by making the outer peripheral portion of the workpiece protrude from the outside of the film laminate and sandwiching only the protruding outer peripheral portion of the workpiece with molds from up and down.
又，較佳為，上述的發明中，前述工件載置過程具備： 配置過程，其在具備上殼及下殼的腔室的內部空間配置前述工件及前述薄膜積層體； 減壓過程，其對前述腔室的內部空間進行減壓；及 加壓過程，其在前述腔室的內部空間被減壓的狀態下使前述工件對前述薄膜積層體加壓。 Also, preferably, in the above-mentioned invention, the aforementioned workpiece loading process has: an arranging process of arranging the aforementioned workpiece and the aforementioned thin-film laminate in an inner space of a chamber having an upper case and a lower case; a decompression process that decompresses the interior space of the aforementioned chamber; and The pressurization process pressurizes the film laminate by the workpiece in a state where the internal space of the chamber is decompressed.
(作用・效果)根據該構成，將工件加壓在薄膜積層體的加壓工序係使用腔室在減壓狀態下進行。亦即因為在將保持薄膜與工件之間的空間除氣的狀態下使工件密接於薄膜積層體，所以可避免因捲入於保持薄膜與工件之間的空氣而使保持薄膜對工件的保持力降低之情形。(Function and Effect) According to this configuration, the pressurizing step of pressurizing the workpiece on the film laminate is performed under reduced pressure using the chamber. That is, because the workpiece is in close contact with the film laminate in a state where the space between the holding film and the workpiece is degassed, the holding force of the holding film on the workpiece due to the air involved between the holding film and the workpiece can be avoided. situation of reduction.
又，較佳為，上述的發明中，前述工件載置過程更具備分離過程，其使配置在前述腔室的內部空間之前述工件及前述薄膜積層體分離而使間隙部形成於前述工件與前述薄膜積層體之間， 前述減壓過程係在透過前述分離過程於前述工件與前述薄膜積層體之間形成有前述間隙部的狀態下將前述腔室的內部空間減壓。 Furthermore, preferably, in the above invention, the workpiece loading process further includes a separation process for separating the workpiece and the thin film laminate placed in the inner space of the chamber so that a gap is formed between the workpiece and the aforementioned thin film laminate. between thin film laminates, In the decompression process, the internal space of the chamber is decompressed in a state where the gap portion is formed between the workpiece and the thin film laminate through the separation process.
(作用・效果)根據該構成，因為在工件與薄膜積層體之間確實地形成有間隙部之狀態下進行減壓，所以工件與薄膜積層體之間的空間被確實地除氣。亦即，可確實地防止在將工件接觸於薄膜積層體時空氣被捲入於工件與薄膜積層體之間。因此，可確實地避免保持薄膜對工件的保持力因空氣捲入而降低的事態。(Function and Effect) According to this configuration, since the pressure is reduced in a state where a gap is reliably formed between the workpiece and the thin film laminate, the space between the workpiece and the thin film laminate is surely degassed. That is, it is possible to reliably prevent air from being caught between the workpiece and the thin film laminate when the workpiece is brought into contact with the thin film laminate. Therefore, it is possible to reliably avoid a situation where the holding force of the holding film to the workpiece is lowered due to air entrapment.
又，較佳為，上述的發明中，前述封裝過程具備： 樹脂填充過程，其在由上部模具及下部模具構成的封裝用模具的內部空間配置著安裝在前述工件的前述半導體元件之狀態下，將前述封裝用樹脂以熔融的狀態填充於前述內部空間；及 樹脂硬化過程，其透過使所填充的前述封裝用樹脂硬化而將前述半導體元件以前述封裝用樹脂封裝， 前述脫離過程係使前述工件與以前述封裝用樹脂封裝的前述半導體元件從前述薄膜積層體脫離，並使前述上部模具從前述工件脫離。 Also, preferably, in the above-mentioned invention, the aforementioned encapsulation process has: A resin filling process of filling the encapsulating resin in a molten state in the internal space in a state where the semiconductor element mounted on the workpiece is placed in the internal space of the encapsulating mold composed of an upper mold and a lower mold; and a resin curing process of encapsulating the aforementioned semiconductor element with the aforementioned encapsulating resin by curing the filled aforementioned encapsulating resin, In the detachment process, the workpiece and the semiconductor element encapsulated with the encapsulating resin are detached from the film laminate, and the upper mold is detached from the workpiece.
(作用・效果)根據該構成，透過使用模具的樹脂填充過程及樹脂硬化過程，可精度佳地封裝半導體元件。又，因為同時進行使被封裝的半導體元件及工件的複合體從薄膜積層體脫離的工序及使上部模具從工件脫離的工序，所以可縮短製造半導體裝置所需的時間。(Function and Effect) According to this configuration, the semiconductor element can be packaged with high precision through the resin filling process using the mold and the resin curing process. Also, since the process of detaching the packaged semiconductor element and the workpiece from the thin film laminate and the process of detaching the upper mold from the workpiece are performed simultaneously, the time required for manufacturing the semiconductor device can be shortened.
又，較佳為，上述的發明中，前述封裝過程具備： 樹脂填充過程，其在由上部模具及下部模具構成的封裝用模具的內部空間配置著安裝在前述工件的前述半導體元件之狀態下，將前述封裝用樹脂以熔融的狀態填充於前述內部空間；及 樹脂硬化過程，其透過使所填充的前述封裝用樹脂硬化而將前述半導體元件以前述封裝用樹脂封裝， 前述脫離過程具備： 模具脫離過程，其使前述上部模具從前述工件脫離；及 積層體脫離過程，其在前述模具脫離過程之後，使前述工件與以前述封裝用樹脂封裝的前述半導體元件從前述薄膜積層體脫離。 Also, preferably, in the above-mentioned invention, the aforementioned encapsulation process has: A resin filling process of filling the encapsulating resin in a molten state in the internal space in a state where the semiconductor element mounted on the workpiece is placed in the internal space of the encapsulating mold composed of an upper mold and a lower mold; and a resin curing process of encapsulating the aforementioned semiconductor element with the aforementioned encapsulating resin by curing the filled aforementioned encapsulating resin, The aforementioned detachment process has: a die release process which releases said upper die from said workpiece; and A laminate release process of releasing the workpiece and the semiconductor element encapsulated with the encapsulating resin from the thin film laminate after the mold release process.
(作用・效果)根據該構成，透過使用模具的樹脂填充過程及樹脂硬化過程，可精度佳地封裝半導體元件。又，因為在完成使上部模具從工件脫離的工序後，進行使被封裝的半導體元件及工件的複合體從薄膜積層體脫離之工序，所以可避免因同時進行複數個過程而使半導體裝置的製造裝置之動作複雜化的情形。(Function and Effect) According to this configuration, the semiconductor element can be packaged with high precision through the resin filling process using the mold and the resin curing process. In addition, after the process of detaching the upper mold from the workpiece, the process of detaching the composite of the packaged semiconductor element and the workpiece from the thin film laminate is performed, so that the manufacturing of the semiconductor device can be avoided due to a plurality of processes performed at the same time. The operation of the device is complicated.
又，較佳為，上述的發明中，前述封裝過程具備： 樹脂填充過程，其在由上部模具及下部模具構成的封裝用模具的內部空間配置著安裝在前述工件的前述半導體元件之狀態下，將前述封裝用樹脂以熔融的狀態填充於前述內部空間；及 樹脂硬化過程，其透過使所填充的前述封裝用樹脂硬化而將前述半導體元件以前述封裝用樹脂封裝， 前述脫離過程具備： 模具脫離過程，其使前述上部模具從前述工件脫離； 追加固化過程，其在前述模具脫離過程之後，於前述薄膜積層體載置有前述工件的狀態下對前述工件及以前述封裝用樹脂封裝的前述半導體元件加熱，藉此使前述封裝用樹脂硬化；及 積層體脫離過程，其在前述追加固化過程之後，使前述工件與以前述封裝用樹脂封裝的前述半導體元件從前述薄膜積層體脫離。 Also, preferably, in the above-mentioned invention, the aforementioned encapsulation process has: A resin filling process of filling the encapsulating resin in a molten state in the internal space in a state where the semiconductor element mounted on the workpiece is placed in the internal space of the encapsulating mold composed of an upper mold and a lower mold; and a resin curing process of encapsulating the aforementioned semiconductor element with the aforementioned encapsulating resin by curing the filled aforementioned encapsulating resin, The aforementioned detachment process has: a mold release process that releases the aforementioned upper mold from the aforementioned workpiece; an additional curing process of heating the workpiece and the semiconductor element encapsulated with the encapsulating resin in a state in which the workpiece is placed on the film laminate after the mold release process, whereby the encapsulating resin is cured; and A laminate release process for releasing the workpiece and the semiconductor element encapsulated with the encapsulating resin from the thin film laminate after the additional curing process.
(作用・效果)根據該構成，透過使用模具的樹脂填充過程及樹脂硬化過程，可精度佳地封裝半導體元件。又，在封裝過程後需要利用爐等進行使封裝用樹脂再加熱硬化的追加固化之情況，於完成將上部模具從工件脫離的工序之後，在將被封裝的半導體元件及工件的複合體設置在薄膜積層體的狀態下進行追加固化。透過此種過程，因為透過保持薄膜可避免在進行追加固化的過程中在工件發生翹曲，所以可避免在對已完成追加固化的半導體元件及工件的複合體進行搬送時因工件的翹曲而使該搬送受阻礙的事態。(Function and Effect) According to this configuration, the semiconductor element can be packaged with high precision through the resin filling process using the mold and the resin curing process. Also, after the encapsulation process, if it is necessary to use a furnace to reheat and harden the encapsulation resin for additional curing, after the process of detaching the upper mold from the workpiece is completed, the packaged semiconductor element and the workpiece are placed on the Additional curing was performed in the state of the film laminate. Through this process, since the warping of the workpiece during the process of additional curing can be avoided through the holding film, it is possible to avoid the warping of the workpiece when transporting the composite of the semiconductor element and the workpiece that has completed the additional curing. The circumstances that hinder the conveyance.
本發明為達成此種目的，亦可採取如下的構成。 亦即，本發明係一種工件一體化裝置，係將工件與積層有將前述工件固定保持在支持體之上的保持薄膜之薄膜積層體一體化，其特徵為具備： 腔室，其具有上殼及下殼； 配置機構，其將前述工件及前述薄膜積層體配置在前述腔室的內部空間； 減壓機構，其使前述腔室的內部空間減壓；及 薄膜接觸機構，其在前述腔室的內部空間被減壓的狀態下使前述工件與前述薄膜積層體接觸。 In order to achieve such an object, the present invention may also take the following configurations. That is, the present invention is a workpiece integration device, which integrates the workpiece with a film laminate laminated with a holding film for fixing and holding the workpiece on the support, and is characterized in that it has: a chamber having an upper shell and a lower shell; an arrangement mechanism for arranging the workpiece and the thin film laminate in the inner space of the chamber; a decompression mechanism that decompresses the interior space of the aforementioned chamber; and and a thin film contact mechanism that brings the workpiece into contact with the thin film laminate in a state where the internal space of the chamber is decompressed.
(作用・效果)根據該構成，透過使工件接觸於薄膜積層體的保持薄膜側而將工件與薄膜積層體一體化，該薄膜積層體係保持工件的保持薄膜積層在支持體之上而成。(Function and Effect) According to this configuration, the workpiece and the thin film laminate are integrated by bringing the workpiece into contact with the holding film side of the thin film laminate, and the thin film laminate system is formed by laminating the holding film holding the workpiece on the support.
保持薄膜係保持工件者，透過使工件接觸於薄膜積層體中的保持薄膜側，以擔保在薄膜積層體上之工件的平坦性。亦即在使工件與薄膜積層體一體化後，再進行安裝半導體元件的工序及封裝半導體元件的工序等之情況，透過保持薄膜可防止因加熱等所致之工件變形而使工件的一部份從薄膜積層體浮起的情形。因此，可更確實地防止發生半導體元件的安裝不良或半導體元件的安裝位置偏移之情形。The holding film is used to hold the workpiece, and by making the workpiece contact the side of the holding film in the thin film laminate, the flatness of the workpiece on the thin film laminate is ensured. That is, after the workpiece and the thin film laminate are integrated, the process of mounting semiconductor elements and the process of packaging semiconductor elements, etc., can prevent part of the workpiece from being deformed due to heating, etc., by holding the film. The state of floating from the thin film laminate. Therefore, it is possible to more reliably prevent the occurrence of defective mounting of the semiconductor element or misalignment of the mounting position of the semiconductor element.
又，使工件接觸薄膜積層體的工序係使用腔室在減壓狀態下進行。亦即因為在將保持薄膜與工件之間的空間除氣的狀態下使工件密接於薄膜積層體，所以可避免因捲入於保持薄膜與工件之間的空氣而使保持薄膜對工件的保持力降低。In addition, the step of bringing the workpiece into contact with the thin film laminate was performed under reduced pressure using a chamber. That is, because the workpiece is in close contact with the film laminate in a state where the space between the holding film and the workpiece is degassed, the holding force of the holding film on the workpiece due to the air involved between the holding film and the workpiece can be avoided. reduce.
本發明為達成此種目的，亦可採取如下的構成。 亦即，本發明係一種薄膜積層體，其特徵為，積層有：金屬製的板狀支持體；及保持薄膜，其以含有聚矽氧或氟化合物的多孔質體構成且將工件加以保持。 In order to achieve such an object, the present invention may also take the following configurations. That is, the present invention is a film laminate characterized by laminating: a metal plate-like support; and a holding film made of a porous body containing polysiloxane or a fluorine compound and holding a workpiece.
(作用・效果)根據該構成，透過保持薄膜是以含有聚矽氧或氟化合物的多孔質體構成，使保持薄膜對工件的保持力提升。亦即，透過在保持薄膜載置工件，以在成為多孔質狀的保持薄膜的表面吸附工件之方式產生保持的力。亦即透過工件被載置於薄膜積層體，在從工件朝向保持薄膜的方向產生吸附力。工件變形使得工件的一部份試圖從薄膜積層體浮起的動作係被該吸附力所阻礙。因此，在載置於薄膜積層體之上的工件上安裝半導體元件的工序、及將所安裝的半導體元件以封裝用樹脂等封裝的工序中，工件可維持與保持薄膜密接的平坦形狀。其結果，透過使用該薄膜積層體，可提升安裝半導體元件的位置之精度與半導體元件及工件之連接精度。(Function and Effect) According to this configuration, the permeable holding film is made of a porous body containing polysiloxane or a fluorine compound, and the holding force of the holding film to the workpiece is improved. That is, by placing the workpiece on the holding film, a holding force is generated so that the workpiece is adsorbed on the surface of the porous holding film. That is, when the workpiece is placed on the thin film laminate, an adsorption force is generated in the direction from the workpiece toward the holding film. The workpiece deforms so that a part of the workpiece attempts to float from the thin film laminate is hindered by the suction force. Therefore, in the process of mounting the semiconductor element on the workpiece placed on the thin film laminate, and the process of sealing the mounted semiconductor element with sealing resin or the like, the workpiece can maintain a flat shape in close contact with the holding film. As a result, by using the thin film laminate, the accuracy of the position where the semiconductor element is mounted and the connection accuracy between the semiconductor element and the workpiece can be improved.
本發明為達成此種目的，亦可採取如下的構成。 亦即，本發明係一種半導體裝置，係具有被安裝在工件的半導體元件以封裝用樹脂封裝而成之構造，其特徵為藉由如下過程製造： 工件載置過程，其在薄膜積層體的保持薄膜側載置前述工件，該薄膜積層體積層有在支持體之上保持前述工件的前述保持薄膜； 元件安裝過程，其在載置於前述薄膜積層體的前述工件安裝前述半導體元件； 封裝過程，其將被安裝於前述工件的前述半導體元件以前述封裝用樹脂進行封裝；及 脫離過程，其使前述工件與以前述封裝用樹脂封裝的前述半導體元件從前述薄膜積層體脫離。 In order to achieve such an object, the present invention may also take the following configurations. That is, the present invention is a semiconductor device having a structure in which a semiconductor element mounted on a workpiece is encapsulated with an encapsulating resin, and is characterized in that it is manufactured by the following process: a workpiece loading process of placing the aforementioned workpiece on the holding film side of a thin film laminate having the aforementioned holding film holding the aforementioned workpiece on a support; An element mounting process of mounting the aforementioned semiconductor element on the aforementioned work placed on the aforementioned thin film laminate; an encapsulation process of encapsulating the aforementioned semiconductor element mounted on the aforementioned workpiece with the aforementioned encapsulating resin; and A detachment process of detaching the aforementioned workpiece and the aforementioned semiconductor element encapsulated with the aforementioned encapsulating resin from the aforementioned thin film laminate.
(作用・效果)根據該構成，於工件載置過程中，在薄膜積層體的保持薄膜側載置工件，該薄膜積層體係保持工件的保持薄膜被積層於支持體之上而成。亦即作為將半導體元件安裝於工件的前階段，在薄膜積層體中的保持薄膜側載置工件。(Function and Effect) According to this configuration, the workpiece is placed on the side of the holding film of the thin-film laminated body during the loading process of the workpiece, and the holding film for holding the workpiece in this thin-film laminated system is laminated on the support. That is, as a pre-stage of mounting the semiconductor element on the workpiece, the workpiece is placed on the side of the holding film in the thin film laminate.
保持薄膜係保持工件者，透過在薄膜積層體中的保持薄膜側載置工件以擔保工件的平坦性。亦即在安裝半導體元件的工序及封裝半導體元件的工序等中，透過保持薄膜可防止因加熱等所致之工件變形而使工件的一部份從薄膜積層體浮起的情形。因此，可更確實地防止發生半導體元件的安裝不良或半導體元件的安裝位置偏移之情形。The holding film is used to hold the workpiece, and the flatness of the workpiece is ensured by placing the workpiece on the side of the holding film in the film laminate. That is, in the process of mounting semiconductor elements and the process of packaging semiconductor elements, etc., the holding film can prevent a part of the workpiece from floating from the thin film laminate due to deformation of the workpiece due to heating or the like. Therefore, it is possible to more reliably prevent the occurrence of defective mounting of the semiconductor element or misalignment of the mounting position of the semiconductor element.
又，保持薄膜係接觸工件的寬廣範圍而將工件保持。亦即保持薄膜係透過對工件的寬廣範圍均等地作用保持力以防止工件的變形。因此，可更確實地避免因為使以推壓或把持為例之大的物理的壓力作用於工件的狹窄範圍，而在該物理的壓力所作用的部分等中發生工件破損之事態。Also, the holding film contacts a wide range of the workpiece to hold the workpiece. That is, the holding film prevents deformation of the workpiece by applying a holding force equally to a wide range of the workpiece. Therefore, it is possible to more reliably avoid a situation where a large physical pressure such as pushing or gripping is applied to a narrow range of the workpiece and damage to the workpiece occurs in the portion to which the physical pressure acts.
而且，透過在薄膜積層體的保持薄膜側載置工件之單純操作，使防止工件的變形之保持力對工件作用。亦即，可大幅縮短防止工件的變形之工序所需的時間。因此，既可提升半導體裝置的製造效率又可防止工件的變形。 [發明之效果] Furthermore, a holding force for preventing deformation of the workpiece acts on the workpiece by simply placing the workpiece on the holding film side of the film laminate. That is, the time required for the process of preventing deformation of the workpiece can be greatly shortened. Therefore, the manufacturing efficiency of the semiconductor device can be improved and the deformation of the workpiece can be prevented. [Effect of Invention]
根據本發明的半導體裝置的製造方法、工件一體化裝置、薄膜積層體、及半導體裝置，於工件載置過程中，在薄膜積層體的保持薄膜側載置工件，該薄膜積層體係保持工件的保持薄膜積層於支持體之上而成。亦即作為將半導體元件安裝於工件的前階段，在薄膜積層體中的保持薄膜側載置工件。According to the manufacturing method of the semiconductor device, the workpiece integrated device, the thin film laminate, and the semiconductor device of the present invention, the workpiece is placed on the side of the thin film laminate holding the thin film during the workpiece placement process, and the thin film laminate system holds the workpiece. The thin film is laminated on the support. That is, as a pre-stage of mounting the semiconductor element on the workpiece, the workpiece is placed on the side of the holding film in the thin film laminate.
保持薄膜係保持工件者，透過在薄膜積層體中的保持薄膜側載置工件以擔保工件的平坦性。亦即在安裝半導體元件的工序及封裝半導體元件的工序等中，透過保持薄膜可防止因加熱等所致之工件變形而使工件的一部份從薄膜積層體浮起的情形。因此，可更確實地防止發生半導體元件的安裝不良或半導體元件的安裝位置偏移之情形。The holding film is used to hold the workpiece, and the flatness of the workpiece is ensured by placing the workpiece on the side of the holding film in the film laminate. That is, in the process of mounting semiconductor elements and the process of packaging semiconductor elements, etc., the holding film can prevent a part of the workpiece from floating from the thin film laminate due to deformation of the workpiece due to heating or the like. Therefore, it is possible to more reliably prevent the occurrence of defective mounting of the semiconductor element or misalignment of the mounting position of the semiconductor element.
又，保持薄膜係接觸工件的寬廣範圍而將工件保持。亦即保持薄膜係透過對工件的寬廣範圍均等地作用保持力以防止工件的變形。因此，可更確實地避免因為使以推壓或把持為例之大的物理的壓力作用於工件的狹窄範圍，而在該物理的壓力所作用的部分等中發生工件破損的事態。Also, the holding film contacts a wide range of the workpiece to hold the workpiece. That is, the holding film prevents deformation of the workpiece by applying a holding force equally to a wide range of the workpiece. Therefore, it is possible to more reliably avoid a situation where a large physical pressure such as pushing or gripping is applied to a narrow range of the workpiece and damage to the workpiece occurs in the portion to which the physical pressure acts.
而且，透過在薄膜積層體的保持薄膜側載置工件之單純操作，使防止工件的變形之保持力對工件作用。亦即，可大幅縮短防止工件的變形之工序所需的時間。因此，既可提升半導體裝置的製造效率又可防止工件的變形。Furthermore, a holding force for preventing deformation of the workpiece acts on the workpiece by simply placing the workpiece on the holding film side of the film laminate. That is, the time required for the process of preventing deformation of the workpiece can be greatly shortened. Therefore, the manufacturing efficiency of the semiconductor device can be improved and the deformation of the workpiece can be prevented.
[用以實施發明的形態][Mode for Carrying Out the Invention]
以下，參照圖面以說明本發明的實施例。首先，使用圖1及圖2來說明本實施例的半導體裝置的製造方法之概要。圖1係本實施例的半導體裝置的製造方法之流程圖，圖2係顯示在製造方法的各步驟中之半導體裝置的構成的剖面圖。Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, an outline of a method of manufacturing a semiconductor device according to this embodiment will be described using FIGS. 1 and 2 . FIG. 1 is a flowchart of a method of manufacturing a semiconductor device according to this embodiment, and FIG. 2 is a cross-sectional view showing the structure of the semiconductor device in each step of the manufacturing method.
本發明的半導體裝置的製造方法為，首先透過在圖2(a)所示的托架1之上積層保持薄膜3，形成圖2(b)所示的薄膜積層體5(步驟S1)。其次，如圖2(c)所示般使工件W保持在保持薄膜3(步驟S2)。然後，將工件W的連接用導體部(未圖示)與半導體元件7的凸塊8連接，如圖2(d)所示般在工件W安裝半導體元件7(步驟S3)。The manufacturing method of the semiconductor device of the present invention firstly forms the
在安裝半導體元件7後，進行電漿處理(步驟S4)，如圖2(e)所示般將半導體元件7藉由封裝體9進行封裝(步驟S5)。在半導體元件7藉由封裝體9封裝後，透過使薄膜積層體5從工件W分離而製造如圖2(f)所示的半導體裝置11(步驟S6)。此外在本實施例中，半導體裝置11是指安裝在工件W之上的1或2以上的半導體元件7的每一者藉由封裝體9而封裝的構造體。After the
托架1係以金屬等所構成之板狀構件，對工件W進行支持。作為托架1的一例，可舉出矩形狀的不鏽鋼板或玻璃板。托架1的厚度，作為一例是100μm～1mm左右，更佳為500μm左右。
托架1的厚度亦可因應於以工件W的厚度為例的諸條件而適當變更。
The
保持薄膜3係形成於托架1之上的薄層狀的構件，對工件W以平坦的狀態進行保持。作為構成保持薄膜3的材料的一較佳例，可舉出含有聚矽氧的多孔質體或含有氟化合物的多孔質體。本發明中的聚矽氧為含有矽的高分子化合物。本發明中的氟化合物為含有氟的高分子化合物。作為氟化合物的一例，可舉出聚四氟乙烯(PTFE)。在保持薄膜3為多孔質體的情況，在形成氣泡的比例之較佳例方面是30%～70%左右。本實施例中設成將含有聚矽氧的多孔質體作為保持薄膜3的材料(薄膜材)使用。The holding
因為保持薄膜3為多孔質體，保持薄膜3係對配置在保持薄膜3的表面之工件W發揮高的吸附性。亦即因為保持薄膜3的吸附性而可提升保持薄膜3對工件W的保持力。特別在工件W形成微細的凹凸之情況，因為保持薄膜3為多孔質體，工件W的凹凸會進入形成在保持薄膜3的表面之孔部。因此，可更加提升保持薄膜3與工件W之密接性。Since the holding
半導體元件7乃係安裝於工件W並形成配線電路之元件。圖2(d)中雖在工件W安裝有2個半導體元件7，但安裝於工件W的半導體元件7之數量亦可適當變更。作為半導體元件7的例子，可舉出使用聚矽氧半導體的IC、使用有機半導體的有機EL元件、及集成有各種運算電路的處理器或記憶體等。在半導體元件7的下表面形成含有焊料球的凸塊8。半導體元件7係隔介凸塊8連接於工件W。The
作為工件W的一例，可舉出玻璃基板、有機基板、電路基板、矽晶圓等。本實施例中工件W形成大致矩形，但工件W的形狀亦可適當變更為以矩形、圓形、多角形等為例之任意的形狀。工件W的厚度可適當變更，舉一例為使用厚度100μm以下的基板。Examples of the workpiece W include glass substrates, organic substrates, circuit substrates, silicon wafers, and the like. In this embodiment, the workpiece W is formed in a substantially rectangular shape, but the shape of the workpiece W may be appropriately changed to any shape such as a rectangle, a circle, a polygon, and the like. The thickness of the workpiece W can be appropriately changed, and an example is to use a substrate with a thickness of 100 μm or less.
封裝材9係用以封裝半導體元件7，在構成材料的例子方面，雖可舉出環氧樹脂或酚樹脂等，但只要為可利用在半導體元件7的封裝之材料則未特別限定。本實施例中設成使用固態的熱硬化性樹脂作為封裝材9。封裝材9相當於本發中的封裝用樹脂。The
此處，針對構成製造半導體裝置11之裝置的各機構作說明。本發明的半導體裝置的製造裝置具備有：薄膜積層機構13、工件裝設機構15、半導體安裝機構17、及封裝機構19。又，半導體裝置的製造裝置係具備未圖示的電漿處理裝置。電漿處理裝置乃係透過電漿放電對工件W的上表面進行洗淨處理者，亦可使用公知的裝置。工件裝設機構15相當於本發明中的工件一體化裝置。Here, each mechanism constituting the apparatus for manufacturing the
薄膜積層機構13係如圖6所示，具備載置台21及塗布構件23。載置台21的一例為金屬製的夾盤台，將托架1以水平狀態保持。載置台21係與未圖示的真空裝置連接，在將托架1吸附保持的構成可更穩定地保持托架這點為較佳。塗布構件23係將液狀的薄膜材塗布於托架1以形成保持薄膜3的層。作為塗布構件23的一例，雖可使用接觸輥塗布機、繞線棒塗布機(Meyer bar coater)、模塗布機、凹版塗布機、刷子等，但只要為使保持薄膜3的層形成在托架1的上表面者則未特別限定。As shown in FIG. 6 , the thin
工件裝設機構15係如圖3所示，具備有：工件供給部25、工件搬送機構27、及腔室29。在工件供給部25的內部，將安裝半導體元件7的面設為朝上的狀態之工件W收納在多層。As shown in FIG. 3 , the
工件搬送機構27具備有馬蹄形的保持臂28。在保持臂28的保持面設有稍突出之複數個吸附墊，藉由該吸附墊將工件W吸附保持。又，保持臂28係藉由形成在其內部的流路與在該流路的基端側連接的連接流路而與空壓裝置連通連接。在本實施例中，保持臂28係下表面設有吸附墊，且設為對工件W的上表面周緣部吸附保持之構成。在工件搬送機構27配設有未圖示的移動可動台，構成為透過該移動可動台，工件搬送機構27係在保持著工件W的狀態下可水平移動及升降移動。上述的工件搬送機構27的構成係一例，只要是搬送工件W的構成則不受此所限。The
腔室29係由下殼29A和上殼29B所構成。在下殼29A的內部收納有保持台31。保持台31係將薄膜積層體5保持者，舉一例為金屬製的夾盤台。保持台31較佳為對薄膜積層體5吸附保持之構成。下殼29A係構成為連同保持台31一起沿著在y方向延伸的軌道30可在設置位置P1與裝設位置P2之間往復移動。在下殼29A的上表面形成有接合部33。The
上殼29B配置在裝設位置P2的上方，構成為透過未圖示的升降台而可升降移動。在上殼29B的下表面形成有接合部34。亦即透過在下殼29A朝裝設位置P2移動的狀態下使上殼29B下降，使下殼29A與上殼29B藉由接合部33與接合部34接合而形成腔室29。接合部33及接合部34的接合面較佳為，施加以氟加工作為一例的離型處理。透過接合部33及接合部34被接合，腔室29係構成為內部空間成為密閉狀態。The
在上殼29B的內部設有推壓構件35。在推壓構件35的上部連結有缸體37，透過缸體37的動作使推壓構件35可在腔室29的內部升降。推壓構件35的下表面係扁平狀，且構成為該下表面的尺寸大於工件W的尺寸。透過推壓構件35在腔室29的內部下降，使得被積層載置於保持台31的薄膜積層體5及工件W被推壓。藉由該推壓，工件W係密接於薄膜積層體5的保持薄膜3，利用保持薄膜3保持工件W。A pressing
腔室29係如圖5所示，隔介減壓用的流路38與真空裝置39連通連接。在流路38配設有電磁閥40。又，在腔室29連通連接有流路42，其具備大氣開放用的電磁閥41。透過真空裝置39作動使腔室29的內部空間被除氣而減壓。亦即，工件裝設機構15係構成為在腔室29的內部中以真空減壓狀態下將工件W朝薄膜積層體5推壓。此外，電磁閥40及電磁閥41的開閉操作、以及真空裝置39的動作係被控制部43所控制。The
半導體安裝機構17具備：載置台45、未圖示的助熔劑塗布機構、半導體搬送機構、及加熱機構。載置台45係載置被吸附保持於薄膜積層體5的工件W。助熔劑塗布機構係如圖13所示般在工件W塗布助熔劑FS。半導體搬送機構係搬送半導體元件7使之載置於塗布有助熔劑FS的工件W。加熱機構的一例為回焊爐，透過將載置有半導體元件7的工件W加熱而將半導體元件7安裝於工件W。The
封裝機構19係如圖5所示，具備有上部模具47和下部模具49。上部模具47係隔介流路51而和封裝材供給部53連通連接。封裝材供給部53係經由流路51對上部模具47的內部空間供給封裝材9。上部模具47係構成為透過未圖示的升降台而可升降移動。透過上部模具47下降，上部模具47及下部模具49係如圖18所示，將工件W中的從薄膜積層體5突出外側的部分(外周部WS)夾住而形成模具50。As shown in FIG. 5 , the
在下部模具49的內部形成有保持台55。保持台55係將安裝有半導體元件7的工件W連同薄膜積層體5一起載置保持，其一例為金屬製的夾盤台。保持台55係和貫通下部模具49的桿57連結。桿57的另一端係連結於具備馬達等之致動器59而被驅動。因此，保持台55成為可在下部模具49的內部升降移動。A holding table 55 is formed inside the
半導體裝置的製造裝置更具備裝置搬送機構61。裝置搬送機構61係與可動台63連接，且構成為可升降移動及水平移動。又，裝置搬送機構61係整體為扁平，且構成為：將半導體裝置11中封裝著半導體元件7的封裝材9的層吸附。亦即，裝置搬送機構61構成為透過吸附封裝材9的層而將半導體裝置11吸附保持，且將保持的半導體裝置11朝未圖示的半導體裝置收納部搬送。The semiconductor device manufacturing apparatus further includes a
＜動作的概要＞ 此處，針對實施例的半導體裝置的製造裝置之動作，按照圖1所示的流程圖作詳細說明。 ＜Outline of operation＞ Here, the operation of the semiconductor device manufacturing apparatus of the embodiment will be described in detail according to the flowchart shown in FIG. 1 .
步驟S1(薄膜積層體的製作)
當發出半導體裝置的製造指令時，首先在薄膜積層機構13中製作薄膜積層體5。亦即，托架1從未圖示的托架供給部被搬送到薄膜積層機構13，如圖6(a)所示般，使托架1被載置於載置台21。載置台21係透過使未圖示的真空裝置等作動而將托架1吸附保持。
Step S1 (production of thin film laminate)
When an order to manufacture a semiconductor device is issued, first, the
當托架1透過載置台21保持時，塗布構件23係如圖6(b)所示在托架1的上表面塗布液狀的薄膜材(本實施例中為液狀的聚矽氧多孔質體)。透過塗布液狀的薄膜材，在托架1的層之上形成保持薄膜3的層。在塗布液狀的薄膜材後，使該薄膜材乾燥。透過薄膜材乾燥而使該薄膜材成為固態的薄片狀，如圖6(c)所示，作成托架1的層與成為固態的薄片狀之保持薄膜3的層積層後的薄膜積層體5。將液狀的薄膜材乾燥的方法為自然乾燥或加熱乾燥等，亦可因應條件而適當變更。When the
步驟S2(將工件保持在薄膜)
在製成薄膜積層體5後，開始將工件W保持在保持薄膜3的工序。此時在工件裝設機構15中的下殼29A係預先移往設置位置P1。當開始步驟S2的工序時，透過未圖示的搬送機構將薄膜積層體5從載置台21搬出，朝工件裝設機構15搬送。然後薄膜積層體5透過該搬送機構而如圖7所示般被載置於保持台31。
Step S2 (holding the workpiece in the film)
After the
當薄膜積層體5載置於保持台31時，開始利用工件搬送機構27進行工件W的搬送。亦即，工件搬送機構27係將保持臂28***在工件供給部25的內部收納於多層的工件W彼此之間。保持臂28將工件W的上表面外周部吸附保持並搬出，工件搬送機構27朝保持台31的上方移動。之後，工件搬送機構27下降並解除保持臂28對工件W的吸附，如圖8所示，於薄膜積層體5中的保持薄膜3之側載置工件W。When the
當在保持薄膜3載置工件W時，下殼29A係如圖9所示沿著軌道30從設置位置P1朝裝設位置P2移動。當下殼29A朝裝設位置P2移動時，上殼29B開始下降。透過上殼29B下降使下殼29A與上殼29B接合而形成腔室29。When the workpiece W is placed on the holding
在形成腔室29後，關閉漏洩用的電磁閥41並開啓電磁閥40使真空裝置39作動，進行腔室29的內部空間的減壓。當腔室29的內部被減壓成既定的氣壓(舉一例，真空狀態或100Pa左右的減壓狀態)時，控制部43係關閉電磁閥40並停止真空裝置39的作動。透過腔室29的內部被減壓，存在於工件W與保持薄膜3之間的空氣係朝腔室29的外部被除氣。After the
在對腔室29的內部進行減壓後，控制部43係使缸體37作動以使推壓構件35下降。如圖11所示般，透過推壓構件35下降，使得工件W朝被支持在保持台31的薄膜積層體5推壓。After the inside of the
藉由工件W被朝薄膜積層體5推壓(加壓)，工件W與保持薄膜3之密接性變高而使工件W被裝設於薄膜積層體5。亦即，透過工件W被推壓於多孔質體、即保持薄膜3，而使保持薄膜3對工件W產生吸附力，藉該吸附力使工件W被保持薄膜3吸附保持。此外，關於藉由工件W被保持薄膜3吸附保持而使工件W裝設於薄膜積層體5而成的構造體係設為「工件裝設體WF」。When the workpiece W is pressed (pressurized) toward the
在減壓下透過推壓構件35進行推壓而製成工件裝設體WF後，解除腔室29的減壓。亦即控制部43係使真空裝置39停止作動並開啓漏洩用的電磁閥41使腔室29的內部的氣壓回到大氣壓。之後，如圖12所示般使上殼29B上升而將腔室29開放到大氣中。當腔室29被開放到大氣中時，下殼29A沿著軌道30A從裝設位置P2回歸到設置位置P1。透過下殼29A回歸到設置位置P1，工件裝設體WF係可搬出。After the workpiece mounting body WF is manufactured by pressing with the pressing
步驟S3(半導體元件的裝設)
在工件W裝設於保持薄膜3而製成工件裝設體WF後，開始裝設半導體元件7的工序。首先，透過未圖示的搬送機構使工件裝設體WF從保持台31被搬出，並朝半導體安裝機構17的載置台45搬送。工件裝設體WF被載置於載置台45，載置台45係將工件裝設體WF吸附保持。然後如圖13所示，透過未圖示的助熔劑塗布機構在工件W的上表面塗布助熔劑FS。
Step S3 (installation of semiconductor element)
After the workpiece W is mounted on the holding
在進行助熔劑FS之塗布的期間，半導體搬送機構將半導體元件7朝工件裝設體WF的上方搬送。接著，以未圖示的工件W的連接用導體部與半導體元件7的凸塊8對向之方式進行半導體元件7的對位。當對位完成時，半導體搬送機構使半導體元件7下降，如圖14所示般隔介助熔劑FS使半導體元件7與工件W接觸。While the application of the flux FS is performed, the semiconductor conveyance mechanism conveys the
在使半導體元件7與工件W接觸後，加熱機構係對工件W及半導體元件7加熱。藉由該加熱使凸塊8所含有的焊料球被加熱熔融，所以半導體元件7係隔介凸塊8固定於工件W。當加熱熔融完成時，半導體安裝機構17將溶劑供給到工件W的上表面，如圖15所示般將助熔劑FS除去。在助熔劑FS除去用的溶劑方面，舉一例為使用乙二醇醚系的溶劑。透過除去助熔劑FS而完成半導體元件7的安裝工序。After the
步驟S4(電漿處理)
當半導體元件7被安裝於工件W時，將安裝有半導體元件7的工件裝設體WF朝電漿處理裝置搬送。接著在電漿處理裝置所具備的電漿洗淨室的內部，對安裝著半導體元件7的工件W的上表面進行電漿放電。透過對工件W進行利用電漿放電的處理，除去在工件W的上表面之有機系污染物及助熔劑殘渣等。
Step S4 (plasma treatment)
When the
步驟S5(半導體元件的封裝)
當進行電漿處理時，開始進行對安裝在工件W的半導體元件7封裝的工序。首先，使配設在封裝機構19的保持台55上升，將安裝有半導體元件7的工件裝設體WF從載置台45搬送到保持台55。此時，如圖16所示般，保持台55係朝比下部模具49的上表面還高的位置上升移動。
Step S5 (packaging of semiconductor element)
When the plasma treatment is performed, the process of encapsulating the
在使安裝有半導體元件7的工件裝設體WF載置於保持台55後，控制部43使致動器59作動以使保持台55下降。此時如圖17所示，以保持薄膜3的上表面與下部模具49的上表面齊平的方式調整保持台55的高度。換言之，以工件W的下表面與下部模具49的上表面抵接或接近的程度調整保持台55的高度。After placing the workpiece mounting body WF on which the
在使保持台55下降而調整高度後，使上部模具47如圖18所示般下降。透過上部模具47的下降，工件W中的從薄膜積層體5突出外側的部分，亦即工件W的外周部WS被上部模具47與下部模具49夾住而形成模具50。亦即模具50的內部空間係以工件W為界而劃分成上部模具47側的上空間H1與下部模具49側的下空間H2。After lowering the holding table 55 to adjust the height, the
在使工件W的外周部WS從上下夾住而形成模具50後，控制部43作動封裝材供給部53，而如圖19所示，藉由配設在上部模具47的流路51將封裝材9供給到模具50的內部。由於模具50的內部空間是被工件W所劃分，故所供給之封裝材9被填充到配置有半導體元件7的上空間H1。After clamping the outer peripheral portion WS of the workpiece W from top to bottom to form the
當上空間H1被填充封裝材9時，未圖示的加熱機構作動而加熱封裝材9。透過加熱覆蓋半導體元件7的周圍的封裝材9，安裝在工件W的半導體元件7的每一者係藉由封裝材9而封裝。亦即，固態的封裝材9因加熱而加熱熔融成為流動性高的狀態。成為流動性高的狀態之封裝材9以跟隨安裝有半導體元件7的工件W之凹凸的方式變形，半導體元件7的周圍係精度佳地被封裝材9所填充。接著為熱硬化性樹脂的封裝材9係透過進一步加熱而硬化，藉該硬化使半導體元件7的周圍被封裝材9所封裝。透過將半導體元件7封裝，使具有安裝於工件W的半導體元件7被封裝材9封裝的構成之半導體裝置11形成在薄膜積層體5之上。透過加熱既定時間並使封裝材9熱硬化而完成步驟S5的過程。When the upper space H1 is filled with the sealing
步驟S6(薄膜積層體的分離)
在使半導體元件7封裝而完成半導體裝置11的製作後，開始將半導體裝置11從薄膜積層體5分離的工序。首先如圖20所示，使上部模具47上升並將上部模具47與下部模具49分離。透過使上部模具47上升，上部模具47從工件W分離，使得半導體裝置11中的封裝材9的層露出外部。
Step S6 (separation of thin film laminate)
After the
在使上部模具47上升後，使用裝置搬送機構61將半導體裝置11搬送。裝置搬送機構61係透過隔介設在其下部的吸附孔對封裝材9的上表面吸附而將半導體裝置11保持。After raising the
以裝置搬送機構61對半導體裝置11的保持力(吸附力GS)成為比保持薄膜3對工件W的保持力(吸附力F)還大之方式預先調整裝置搬送機構6的吸引力。因此，透過裝置搬送機構61在將半導體裝置11吸附保持的狀態下上升，半導體裝置11容易從薄膜積層體5分離且連同裝置搬送機構61一起上升。從薄膜積層體5分離的半導體裝置11被收納到未圖示的半導體裝置收納部。The suction force of the device transport mechanism 6 is adjusted in advance so that the holding force (attractive force GS) of the
此外，在步驟S5中的加熱中，封裝材9的熱硬化不充分時，進行追加固化。追加固化乃係使用爐等對半導體裝置11再加熱而使封裝材9充分地熱硬化的過程。在追加固化的加熱時間較佳為比在步驟S5中的加熱時間還長，作為加熱時間的較佳例為1小時到3小時左右。又，在追加固化的加熱溫度較佳為比步驟S5中的加熱溫度還高。In addition, in the heating in step S5, when thermal hardening of the sealing
追加固化亦可在使半導體裝置11從薄膜積層體5分離之前進行，亦可在分離之後進行。在前者的情況，於透過封裝材9的加熱熔融及硬化而在薄膜積層體5之上形成半導體裝置11後，透過在半導體裝置11被載置於薄膜積層體5之上的狀態下將半導體裝置11再加熱，使封裝材9充分被硬化以完成追加固化。在追加固化完成後，透過裝置搬送機構61將封裝材9的上表面吸附保持並上升，使半導體裝置11從薄膜積層體5分離。The additional curing may be performed before or after separating the
後者的情況，在使半導體裝置11從薄膜積層體5分離後，裝置搬送機構61將半導體裝置11搬送到追加固化用的裝置(一例為加熱用的爐)。透過在爐內將半導體裝置11加熱，封裝材9被充分硬化而完成追加固化。裝置搬送機構61係再度對已進行追加固化的半導體裝置11進行保持，並朝半導體裝置收納部搬送。In the latter case, after the
特別是在將薄膜積層體5從半導體裝置11分離的過程之前進行追加固化的情況，因為是在工件W藉由保持薄膜3保持的狀態下進行追加固化，所以可避免在進行追加固化時於工件W發生翹曲的情況。因此，在薄膜積層體5以外未使用防止翹曲機構的情況下，可於工件W為平坦的狀態下完成追加固化的過程。又，即便是進行關於追加固化的再加熱，工件W仍可維持高的平坦性，所以可避免在搬送半導體裝置11時發生因工件W的翹曲所致之搬送錯誤。Especially in the case of performing additional curing before the process of separating the
透過從步驟S1到步驟S6為止之一連串的工序而製作半導體裝置11。之後，依是否已製成規定片數的半導體裝置11而使工序分歧。在已製成規定片數的半導體裝置11的情況係完成半導體裝置的製造裝置之動作。另一方面，在有需要進一步製作半導體裝置11的情況，進到步驟S7。The
步驟S7(薄膜積層體的再利用)
要再製作半導體裝置11之情況，將步驟S6中所用的薄膜積層體5從封裝機構19朝工件裝設機構15搬送。亦即如圖22所示，被載置於封裝機構19的保持台55之薄膜積層體5，係透過未圖示的搬送機構被朝工件裝設機構15搬送，再度載置於保持台31。
Step S7 (reuse of thin film laminate)
When reproducing the
在薄膜積層體5再度載置於保持台31後，透過再次進行步驟S2至S6的工序而再次製作半導體裝置11。以下，透過經由步驟S7並將步驟S2至S6的工序反覆進行規定次數，製作既定的片數之半導體裝置11。亦即在本發明的半導體裝置的製造工序中，可在製作第2片以後的半導體裝置11時將在製作第1片的半導體裝置11時所形成的薄膜積層體5進行再利用。換言之，可將在製作半導體裝置11時所用的薄膜積層體5再利用於下一個進行的步驟S2的工序。After the
＜依據實施例的構成之效果＞ 在習知的半導體裝置的製造工序中，如圖23(a)所示，在以金屬板為例的支持體CA之上載置工件W，一邊以支持體CA將工件W從下方支持一邊在該工件W安裝具備凸塊BA的半導體元件SM。然後透過將被安裝的半導體元件SM以封裝用樹脂封裝而製造半導體裝置。 <Effects of the configuration according to the embodiment> In a conventional manufacturing process of a semiconductor device, as shown in FIG. 23(a), a workpiece W is placed on a support CA such as a metal plate, and the workpiece W is supported by the support CA from below while placing the workpiece W on the support CA. The workpiece W mounts the semiconductor element SM including the bump BA. Then, a semiconductor device is manufactured by encapsulating the mounted semiconductor element SM with an encapsulating resin.
但是在此種習知的製造方法中會發生因工件W的變形等致使半導體裝置的精度降低的問題。亦即在安裝半導體元件7的工序等中因工件W被加熱而發生工件W變形的事態。在工件W發生變形的例子方面，可舉出如工件W翹曲那樣的變形，或圖23(b)所示之工件W起伏那樣的變形等。因為在工件W產生變形，工件W的一部份從支持體CA浮起而使工件W的平坦性降低。其結果，發生以符號MS所示那樣的半導體元件SM與工件W之接觸不良。又，也擔心會有因工件W的變形的關係，而如符號Lb所示在半導體元件SM的安裝位置發生偏移的事態。However, in such a conventional manufacturing method, there is a problem that the accuracy of the semiconductor device decreases due to deformation of the workpiece W or the like. That is, a situation occurs in which the workpiece W is deformed due to the heating of the workpiece W during the process of mounting the
再者，也會擔心在習知的半導體裝置的製造工序中發生工件W的位置偏移之事態。亦即如圖23(c)所示，在安裝半導體元件SM之際因工件W相對於支持體CA的支持面(上表面)滑動，使得工件W朝水平方向偏移。藉由在工件W偏移的狀態下安裝半導體元件SM，半導體元件SM對工件W安裝的位置發生偏移，所以半導體裝置的精度會降低。In addition, there is also a concern that the position of the workpiece W may be displaced in a conventional manufacturing process of a semiconductor device. That is, as shown in FIG. 23( c ), when the semiconductor element SM is mounted, the workpiece W is displaced in the horizontal direction due to the sliding of the workpiece W on the supporting surface (upper surface) of the support body CA. Since the semiconductor element SM is mounted in a state where the workpiece W is shifted, the mounting position of the semiconductor element SM on the workpiece W is shifted, so that the accuracy of the semiconductor device is lowered.
在防止此種工件W的變形之習知的構成方面，可舉出專利文獻1所示那樣的構成。亦即如圖24所示，在將工件W載置於支持體CA的狀態下，於工件W中的安裝半導體元件SM的區域R1的外側部分配置錘構件V。在這情況，因為透過錘構件V的自重推壓工件W，所以可獲得防止因工件W變形使工件W的一部份從支持體CA浮起之一定的效果。As a conventional structure for preventing such deformation of the workpiece W, the structure shown in
然而在此種習知的構成中，擔心在工件W發生損傷的問題，而且難以充分獲得防止工件W的變形之效果。亦即，欲防止工件W之變形，需要加大基於錘構件V的推壓力(物理的壓力)。因此，工件W的應力無法承受增大的錘構件V的推壓力，會在工件W上產生以破裂或變形為例的破損。特別是在工件W中之配設錘構件V的位置R2，發生破損的頻度高。However, in such a conventional configuration, there is a fear of damage to the workpiece W, and it is difficult to obtain a sufficient effect of preventing deformation of the workpiece W. FIG. That is, in order to prevent deformation of the workpiece W, it is necessary to increase the pressing force (physical pressure) by the hammer member V. As shown in FIG. Therefore, the stress of the workpiece W cannot withstand the increased pressing force of the hammer member V, and damage such as cracking or deformation may occur on the workpiece W. Especially at the position R2 where the hammer member V is arranged in the workpiece W, the frequency of breakage is high.
又，在專利文獻1等的構成中，利用錘構件V產生的推壓力會在區域R2附近作用，另一方面在距離區域R2遠處的位置難以作用該推壓力。亦即，特別是在安裝半導體元件SM的區域R1的中央部，難以作用利用錘構件V產生的推壓力，所以在區域R1會有因加熱等而使工件W伸長變形的情況。其結果，在供安裝半導體元件SM的區域R1的內部等難以確實地防止工件W的變形。Also, in the configurations of
特別是近年來半導體裝置之薄型化進展，使用更薄型的工件W。因為工件W做得更薄型化而變得容易在工件W產生損傷，所以就習知的構成而言，既要避免工件W之損傷又要防止工件W之變形乃變得非常困難。又，近年來以半導體裝置低成本化為目的而將塑膠基板等作為工件W使用的趨勢變強。亦即近年來將更易於加熱變形的材料作為工件W使用的趨勢強，因此以習知的構成難以確實地防止工件W的變形。In particular, thinner semiconductor devices have progressed in recent years, and thinner workpieces W have been used. Since the workpiece W is made thinner and the workpiece W is easily damaged, it is very difficult to avoid damage to the workpiece W and prevent deformation of the workpiece W in the conventional configuration. In addition, in recent years, there has been a strong tendency to use a plastic substrate or the like as the workpiece W for the purpose of reducing the cost of semiconductor devices. That is, in recent years, there is a strong tendency to use a material that is more easily deformed by heating as the workpiece W, and therefore it is difficult to reliably prevent the deformation of the workpiece W with the conventional configuration.
另一方面，根據實施例的裝置，進行使用在支持體、即托架1之上積層有保持薄膜3而成的薄膜積層體5，在工件W安裝半導體元件7之工序(步驟S3)及以封裝材9封裝半導體元件7的工序(步驟S5)以製造半導體裝置11。亦即作為將半導體元件7安裝於工件W的前階段，在薄膜積層體5中的保持薄膜3之側載置工件W(步驟S2)。On the other hand, according to the apparatus of the embodiment, the process of mounting the
保持薄膜3係保持工件W者，透過使工件W載置於薄膜積層體5中的保持薄膜3之側並密接以擔保工件W的平坦性。亦即在安裝半導體元件7的工序等中加熱工件W時，透過保持薄膜3可防止工件W變形而使工件W的一部份從薄膜積層體5浮起的情形。The holding
又，保持薄膜3係與工件W的大致整面接觸。換言之，保持薄膜係將工件W的大致整面保持。藉此，保持薄膜3係對工件W的大致整面作用維持平坦性的力，故可更確實地防止工件W的變形。特別是工件W中的安裝半導體元件7的區域R1係確實與薄膜積層體5的保持薄膜3接觸並被保持。因此，在與工件W的中央部對應的區域R1亦會產生防止工件W的變形之效果，所以可更確實地防止發生半導體元件7的安裝不良或安裝位置偏移的情形。Also, the holding
本實施例中，透過在薄膜積層體5的保持薄膜3之側載置工件W之單純操作，使防止工件W的變形之保持力對工件作用。亦即不同於習知的構成，在實施例的半導體裝置11的製造工序中可大幅縮短防止工件W的變形之工序所需的時間。因此，既可提升半導體裝置11的製造效率又能防止工件W的變形。In the present embodiment, a holding force for preventing deformation of the workpiece W acts on the workpiece through a simple operation of placing the workpiece W on the side of the
而且在使用含有聚矽氧或氟化合物的多孔質體作為保持薄膜3的構成材料之情況，透過在保持薄膜3裝設工件W，以在成為多孔質狀的保持薄膜3的表面吸附工件W之方式產生保持的力。亦即透過工件W被載置於薄膜積層體5，如圖25所示，在從工件W朝向保持薄膜3的方向產生吸附力F。工件W變形使得工件W的一部份試圖浮起的動作係被該吸附力F所阻礙。因此，在用以製造半導體裝置11的各工序中，因為可維持工件W密接於保持薄膜3的平坦形狀，所以可提升供安裝半導體元件7的位置之精度和半導體元件7及工件W之連接精度。In addition, in the case of using a porous body containing polysiloxane or a fluorine compound as the constituent material of the holding
又，透過對工件W的外周部推壓或對工件W的外周部拉伸以防止工件W的翹曲，在專利文獻1或專利文獻2的習知構成中，使推壓或拉伸之較大的物理的壓力作用於工件W的一部份。另一方面，在本發明的構成中，透過使保持薄膜3所產生的吸附力F之較小的力作用於工件W整體以防止工件W的翹曲。因此，關於本發明中的半導體裝置的製造方法，可更確實地避免吸附力F超過工件W的應力使工件W破損之事態。In addition, the warping of the workpiece W is prevented by pressing or stretching the outer peripheral portion of the workpiece W. In the conventional configuration of
而且在使用多孔質體作為保持薄膜3的構成材料之情況，基於多孔質產生的吸附力F之保持薄膜3的保持力係大到可防止工件W的變形之程度。另一方面，與使用一般的真空吸引裝置之吸附保持中的吸引力(舉一例為吸附力GS)相比，保持薄膜3的吸附力F較小。因此，在搬送已製成的半導體裝置11之情況，透過將半導體裝置11以真空吸附予以保持，抵抗該吸附力F可容易使半導體裝置11從薄膜積層體5分離。亦即可確實地避免在將半導體裝置11從薄膜積層體5分離時在工件W或保持薄膜3等發生損傷的情形。Furthermore, when a porous body is used as the constituent material of the holding
再者，與使用接著材或黏著材接著或黏著於工件所產生的保持力相比，以多孔質體吸附工件的保持力較小。因此，透過使用多孔質體作為保持薄膜3的構成材料，可避免因為對工件的保持力太強而發生保持薄膜的材料成為殘渣附著於工件的背面(所謂的「殘膠」)之事態。Furthermore, compared with the holding force generated by bonding or adhering to the workpiece with an adhesive material or an adhesive material, the holding force of absorbing the workpiece with the porous body is relatively small. Therefore, by using a porous body as the constituent material of the holding
又，薄膜積層體5中，保持薄膜3係以固體狀的薄膜層形成在托架1之上。因此，可避免在將半導體裝置11從薄膜積層體5分離時使保持薄膜3的構成材料的一部份剝落成為殘渣而附著於工件W之事態。因此，可將於第1次的半導體裝置11的製造工序中使用的薄膜積層體5，再度利用於第2次以後的半導體裝置11的製造工序。亦即在第2次以後的半導體裝置11的製造工序中可省略步驟S1的薄膜積層體5的生成工序，所以可縮短大量生産半導體裝置11所需的時間並大幅減低成本。又，因為可削減托架1及保持薄膜3的廢棄量，所以亦能減低對環境的負荷。In addition, in the
使工件W密接於薄膜積層體5的工序係使用腔室29在減壓狀態下進行。亦即在使保持薄膜3與工件W之間的空間排氣的狀態下使工件W密接於薄膜積層體5，所以可避免因被捲入於保持薄膜3與工件W之間的空氣而使保持薄膜3對工件W的保持力降低之情形。The step of bringing the workpiece W into close contact with the
又，在本實施例中，薄膜積層體5係構成為在俯視中比工件W還小，且以工件W的外周部突出於薄膜積層體5的外側之方式使工件W載置於薄膜積層體5。在這情況，在步驟S5將半導體元件7以封裝材9封裝之際，將突出於薄膜積層體5的外側之工件W的外周部WS從上下以上部模具47及下部模具49等夾入，藉此可將半導體元件7的周圍設成密閉狀態。因此，可在未對半導體元件7或工件W的中央部施加壓力下於半導體元件7的周圍填充封裝材9。因此，在製造半導體裝置11時，可確實地避免在半導體元件7或工件W上的電路，因壓力的作用而發生損傷的情形。In addition, in this embodiment, the
又，透過將工件W的外周部WS把持，可在未對半導體元件7或工件上的電路施加壓力的情況下搬送半導體裝置11。因此，亦可避免在進行半導體裝置11的搬送之際在半導體元件7或工件W上的電路發生損傷的情形。Moreover, by gripping the outer peripheral portion WS of the workpiece W, the
＜其他的實施形態＞ 此外，本次揭示的實施形態所有內容為例示而非限制。本發明的範圍並非上述實施形態的說明，而是由申請專利範圍所示，且更包含與申請專利範圍均等的意味及在範圍內的所有變更(變形例)。例如，本發明可按如下那樣變形實施。 ＜Other Embodiments＞ In addition, all the content of the embodiment form disclosed this time is an illustration and is not restrictive. The scope of the present invention is shown not by the description of the above-mentioned embodiment but by the scope of claims, and includes the meaning equal to the scope of claims and all changes (modifications) within the range. For example, the present invention can be modified and implemented as follows.
(1)於實施例的步驟S2中，在腔室29的內部配置薄膜積層體5及工件W後，在使腔室29的內部減壓的狀態下使用推壓構件35將工件W朝薄膜積層體5推壓，藉此使工件W密接於保持薄膜3，但不受此所限。(1) In step S2 of the embodiment, after placing the
在使工件W密接於保持薄膜3的方法之第1變形例方面，可舉出以下所示那種在腔室29的內部產生差壓FA的構成。在此種第1變形例中，工件W係如圖26(a)所示，以既定的間距貼附保持在長條狀的搬送用薄片T。搬送用薄片T具備有非黏著性的基材與具有黏著性的黏著材積層而成的構造。作為構成基材的材料之例子，可舉出聚烯烴、聚乙烯等。作為構成黏著材的材料之例子，可舉出丙烯酸酯共聚物等。As the first modified example of the method of bringing the workpiece W into close contact with the holding
搬送用薄片T係在工件裝設機構15中的裝設位置P2的上方，沿著在x方向延伸的路徑陸續被放出。搬送用薄片T係透過未圖示的放出機構而陸續被放出。搬送用薄片T的寬度係設定成大於下殼29A的直徑。The sheet T for conveyance is fed out successively along a path extending in the x direction above the mounting position P2 in the
第1變形例係各步驟中之步驟S2中的工序與實施例相異。於是針對第1變形例中的步驟S2，使用圖26及圖27等各圖來說明。In the first modification, the process in step S2 among the steps is different from that in the embodiment. Then, step S2 in the first modified example will be described using various figures such as FIG. 26 and FIG. 27 .
在第1變形例中，於步驟S1製成薄膜積層體5後，在設置位置P1使薄膜積層體5載置於保持台31。之後，使下殼29A連同保持台31一起從設置位置P1朝裝設位置P2移動。如圖26(b)所示，於裝設位置P2，在下殼29A與上殼29B之間，保持工件W的搬送用薄片T朝x方向陸續被放出。In the first modification, after the
在下殼29A朝裝設位置P2移動後，以工件W位在薄膜積層體5的上方之方式陸續放出搬送用薄片T。當以工件W位在薄膜積層體5的上方之方式進行定位時，上殼29B會下降。透過上殼29B下降，如圖26(c)所示，搬送用薄片T係被上殼29B與下殼29A挾持而形成腔室29。所形成的腔室29的內部空間係被搬送用薄片T分割成2個空間。亦即，包夾著搬送用薄片T而分割成下殼29A側的下空間L1與上殼29B側的上空間L2。位在下殼29A內的薄膜積層體5係與工件W具有既定的間隙(clearance)而接近地對向著。After the
在形成腔室29後，以在上空間L2與下空間L1之間產生差壓FA之方式使兩空間減壓。首先，控制部43作動真空裝置39將下空間L1內的氣壓與上空間L2內的氣壓減壓到既定值。在既定值的例子方面，可舉出10Pa～100Pa。此時，控制部43係對配設在連接於下殼29A的流路之未圖示的電磁閥、與配設在連接於上殼29B的流路之未圖示的電磁閥之開度進行調整，俾使下空間L1及上空間L2以相同速度逐漸減壓。After the
當下空間L1及上空間L2的氣壓被減壓到既定值時，控制部43係關閉各個電磁閥，同時停止真空裝置39的作動。然後控制部43係以上空間L2的氣壓比下空間L1的氣壓還高的方式，調整每個電磁閥的開度使之漏洩。透過使上空間L2的氣壓比下空間L1的氣壓還高，如圖27(a)所示，在兩空間之間產生差壓FA。藉由產生差壓FA，工件W係連同搬送用薄片T從中心部分朝下殼29A之側逐漸被拉入，逐漸變形成凸狀。When the air pressure in the lower space L1 and the upper space L2 is decompressed to a predetermined value, the
因基於差壓FA所致的工件W的變形之關係，在被排氣的下空間L1的內部，工件W從中心部朝外周部呈放射狀與保持薄膜3的表面接觸，然後保持薄膜3與工件W逐漸密接。透過該接觸及密接，工件W被裝設於薄膜積層體5的保持薄膜3之側而完成步驟S2的工序。由於在步驟S3之後的動作與實施例相同，故可省略說明。Due to the deformation of the workpiece W due to the differential pressure FA, the workpiece W comes into contact with the surface of the holding
第1變形例中係與實施例相同，將工件W裝設於保持薄膜3的工序係在減壓狀態下進行。因此，可避免因氣泡捲入於保持薄膜3與工件W之間而使保持薄膜3對工件W的保持力降低之事態。由於第1變形例中係透過差壓將工件W推壓，故在腔室29中可省略推壓構件35及缸體37。In the first modification, as in the embodiment, the step of mounting the workpiece W on the holding
如此，在第1變形例中於減壓狀態下在腔室29的內部產生差壓FA。然後透過以該差壓FA推壓工件W而使工件W密接於保持薄膜3，形成保持薄膜3將工件W吸附保持的裝設狀態。In this way, in the first modified example, the differential pressure FA is generated inside the
在使工件W密接於保持薄膜3的方法的第2變形例方面，可舉出使用推壓構件35A來推壓搬送用薄片T及工件W之構成。如圖28所示，第2變形例中在上殼29B配設有推壓構件35A來取代推壓構件35。實施例中所配設的推壓構件35構成為下表面成為扁平狀，另一方面，第2變形例中所配設的推壓構件35A構成為下表面成為半球狀或圓頂狀。推壓構件35A係構成為藉由缸體37之動作而可在腔室29的內部升降移動。As a second modified example of the method of bringing the workpiece W into close contact with the holding
就第2變形例而言，係與第1變形例同樣，工件W被保持在長條狀的搬送用薄片T。然後在步驟S2中上殼29A與下殼29B將搬送用薄片T夾住而形成腔室29。此外，第2變形例與第1變形例不同，因為無需產生差壓，所以搬送用薄片T的寬度亦能小於下殼29A的直徑。亦即，第2變形例中無需透過搬送用薄片T來劃分腔室29的內部空間。In the second modified example, the workpiece W is held by the elongated conveyance sheet T as in the first modified example. Next, in step S2 , the
此處，針對第2變形例中的步驟S2之動作進行說明。於第2變形例的步驟S1中製成薄膜積層體5後，在設置位置P1使薄膜積層體5載置於保持台31。之後，將下殼29A連同保持台31一起從設置位置P1朝裝設位置P2移動。在裝設位置P2，與第1變形例同樣，在下殼29A與上殼29B之間，保持工件W的搬送用薄片T朝x方向陸續被放出。Here, the operation of step S2 in the second modified example will be described. After the
在下殼29A朝裝設位置P2移動後，透過適當使搬送用薄片T陸續放出，以工件W位於薄膜積層體5的上方之方式進行定位，然後上殼29B下降。透過上殼29B下降，搬送用薄片T係被上殼29B與下殼29A挾持而形成腔室29。After the
在將搬送用薄片T夾入並形成腔室29後，控制部43係作動真空裝置39使腔室29的內部空間減壓。在腔室29的內部被減壓後，作動缸體37使推壓構件35A下降。透過往成為半球狀或圓頂狀的推壓構件35A的下表面推壓，如圖29所示，工件W係連同搬送用薄片T一起從中心部分逐漸變形成凸狀。After the conveyance sheet T is sandwiched to form the
透過工件W被下降的推壓構件35A推壓而變形成凸狀，工件W係在腔室29的內部從中心部朝外周部呈放射狀地與保持薄膜3的表面接觸，然後保持薄膜3與工件W逐漸密接。透過該接觸及密接，工件W被裝設於薄膜積層體5的保持薄膜3之側而完成步驟S2的工序。由於步驟S3以後的動作與實施例及其他的變形例相同，故省略說明。When the workpiece W is pressed by the
如此，第2變形例中，透過在減壓狀態下以半球狀的推壓構件35A推壓工件W而使工件W密接於保持薄膜3，形成保持薄膜3將工件W吸附保持的裝設狀態。Thus, in the second modified example, the work W is brought into close contact with the holding
在使工件W密接於保持薄膜3的方法的第3變形例方面，可舉出圖30所示那樣的構成。在第3變形例中，於腔室29的內部配設有推壓輥36。推壓輥36係將工件W朝薄膜積層體5推壓者，構成為可透過未圖示的驅動部而升降移動及朝水平方向轉動。此外在第3變形例中，與實施例同樣不使用搬送用薄片T。As a third modified example of the method of bringing the workpiece W into close contact with the holding
此處，針對第3變形例中的步驟S2之動作進行說明。在第2變形例的步驟S1中製成薄膜積層體5後，在設置位置P1使薄膜積層體5載置於保持台31。然後與實施例同樣地在設置位置P1於薄膜積層體5之上載置工件W。之後，使下殼29A連同保持台31一起從設置位置P1朝裝設位置P2移動，使上殼29A下降並形成腔室29。Here, the operation of step S2 in the third modified example will be described. After the
在形成腔室29後，控制部43作動真空裝置39對腔室29的內部空間進行減壓。當腔室29的內部成為減壓狀態時，控制部43作動驅動部，適當調整推壓輥36的高度並使推壓輥36朝水平方向轉動。亦即推壓輥36係在載置於薄膜積層體5之上的工件W之上一邊轉動，一邊將工件W朝薄膜積層體5推壓。After the
透過工件W被推壓輥36推壓，工件W與保持薄膜3密接使工件W被裝設於薄膜積層體5。透過在薄膜積層體5的保持薄膜3之側裝設工件W，完成步驟S2的工序。由於步驟S3以後的動作與實施例及其他的變形例相同，故省略說明。When the workpiece W is pushed by the pressing
如此，在第3變形例中，透過於減壓狀態下藉由推壓輥36之轉動而推壓工件W，使工件W密接於保持薄膜3，形成保持薄膜3將工件W吸附保持的裝設狀態。In this way, in the third modified example, the workpiece W is pressed by the rotation of the
(2)實施例中，雖於步驟S2中以在薄膜積層體5之上載置著工件W的狀態下形成腔室29，再對腔室29的內部空間進行減壓之構成為例作說明，但不受此所限。亦即在實施例或各變形例的步驟S2中，亦可在使用既定的分離構件於薄膜積層體5與工件W之間形成間隙部HP的狀態下形成腔室29並對該腔室29的內部空間進行減壓。(2) In the embodiment, in step S2, the
針對在已形成間隙部HP的狀態下對腔室29的內部減壓之變形例，使用圖31及圖32作說明。該變形例中，如圖31所示，在保持台31的內部配設有支持銷65。支持銷65在俯視中，配置成將載置於保持台31的薄膜積層體5圍繞。支持銷65相當於本發明中的分離構件。A modified example of decompressing the inside of the
支持銷65係構成為透過缸體等之致動器(未圖示)而可在保持台31的保持面出退升降。又，以從保持台31突出的支持銷65可將工件W從下方支持之方式調整支持銷65的位置。亦即(2)的變形例中，構成為工件W的直徑大於托架1的直徑。The
(2)的變形例中，與其他的變形例同樣地，各步驟中之步驟S2中的工序是與實施例相異。於是針對(2)的變形例中的步驟S2作說明。In the modified example of (2), as in the other modified examples, the process in step S2 among the steps is different from the embodiment. Then, step S2 in the modified example of (2) will be described.
在藉由步驟S1的工序製成薄膜積層體5後，在設置位置P1使薄膜積層體5載置於保持台31，進一步使用工件搬送機構27將工件W載置於薄膜積層體5之上。之後，使下殼29A連同保持台31一起從設置位置P1朝裝設位置P2移動。After the
在下殼29A移到裝設位置P2後，使上殼29B下降並使接合部33及34接合，形成腔室29。在形成腔室29後，使支持銷65從保持台31突出。從保持台31突出的支持銷65每一者係如圖31所示，將載置於薄膜積層體5之上的工件W從下方往上推。透過支持銷65將工件W往上推，在工件W與保持薄膜3之間形成間隙部HP。After the
在形成間隙部HP後，控制部43作動真空裝置39使腔室29的內部減壓。透過腔室29的內部被減壓，存在於工件W與保持薄膜3之間隙部HP的空氣朝腔室29的外部除氣。After the gap portion HP is formed, the
在使腔室29的內部減壓後，控制部43使支持銷65下降。如圖32所示，透過支持銷65下降使工件W再度被載置於薄膜積層體5之上。此時，因為是在間隙部HP的空氣預先被除氣的狀態下使工件W載置於薄膜積層體5，所以可確實地防止空氣被捲入於正接觸中的工件W與薄膜積層體5之間。After depressurizing the inside of the
在減壓狀態下使工件W再度載置於薄膜積層體5之上後，控制部43作動缸體37使推壓構件35下降。透過推壓構件35下降，工件W朝被支持在保持台31的薄膜積層體5推壓。透過工件W朝薄膜積層體5推壓而使工件W與保持薄膜3密接，工件W被裝設於薄膜積層體5。After the workpiece W is placed on the
如此，本變形例中，在使用支持銷65等使工件W與薄膜積層體5分離，且在工件W與薄膜積層體5之間形成有間隙部HP的狀態下，將收納著工件W及薄膜積層體5的腔室29的內部空間設為減壓狀態。在工件W與薄膜積層體5接觸著的狀態下對腔室29的內部進行減壓之情況，可想到工件W與薄膜積層體5之間隙的一部份被工件W與薄膜積層體5覆蓋而成為密閉狀態的情況。In this way, in this modified example, the workpiece W and the
在這情況，該密閉的一部份的間隙未被充分除氣，空氣被捲入於工件W與薄膜積層體5之間。在工件W與薄膜積層體5之間有空氣捲入的狀態下，當使用推壓構件35等將工件W朝薄膜積層體5推壓時，擔心有因被捲入的空氣而使工件W與保持薄膜3之密接性降低的事態。本變形例中因為是在工件W與薄膜積層體5之間確實形成有間隙部HP的狀態下進行減壓，所以可確實地防止在將工件W往薄膜積層體5推壓時空氣捲入於工件W與薄膜積層體5之間。因此，可提升工件裝設體WF中的工件W與保持薄膜3之密接性。In this case, the closed part of the gap is not sufficiently degassed, and air is trapped between the workpiece W and the
此外，(2)的變形例中，使支持銷65突出並形成間隙部HP的時序只要為在使腔室29的內部減壓的時序之前則亦可適當變更。舉一例，亦可為在將薄膜積層體5載置於保持台31後使支持銷65突出，工件搬送機構27在薄膜積層體5的上方將工件W遞交到支持銷65的構成。在這情況，於設置位置P1，間隙部HP形成在工件W與薄膜積層體5之間。之後，一邊維持形成有間隙部HP的狀態一邊使下殼29A朝裝設位置P2移動，在讓上殼29B下降而形成腔室29後對腔室29的內部進行減壓。In addition, in the modified example of (2), the timing of protruding the
此外，(2)的變形例中，使工件W與薄膜積層體5分離的分離構件係未受限於支持銷65。舉一例，亦可為將工件W把持並待機於薄膜積層體5的上方之把持機構。在分離構件的其他例子方面，可舉出在對工件W吸附保持的狀態下待機於薄膜積層體5之上方的吸附保持機構等。In addition, in the modified example of (2), the separation means for separating the workpiece W from the
(3)實施例及各變形例的步驟S6中，雖在使模具50從半導體裝置11脫離後使半導體裝置11從薄膜積層體5脫離，但是使模具50從半導體裝置11脫離的時序與使半導體裝置11從薄膜積層體5脫離的時序亦可同時。作為一例，亦可為在使上部模具47從半導體裝置11脫離的同時，裝置搬送裝置61將封裝材9的層吸附保持並使之上升而將半導體裝置11從薄膜積層體5脫離。又，亦可為在使上部模具47從半導體裝置11脫離的同時，使保持著薄膜積層體5的保持台55下降而將薄膜積層體5從半導體裝置11分離。此外，在封裝材9的熱硬化不充分的情況，較佳為在使薄膜積層體5從半導體裝置11分離後對半導體裝置11進行追加固化。(3) In step S6 of the embodiment and each modified example, although the
(4)在實施例及各變形例中，亦可在步驟S2與步驟S3之間執行以電漿放電處理工件的工序。利用電漿放電所致的工件之處理係可使用公知的電漿洗淨裝置來進行。藉由進行電漿處理作為將步驟S3的半導體元件7安裝於工件W的工序之前階段，可將在工件W的表面露出的基板墊金屬表面等洗淨以除去有機系污染物等。(4) In the embodiment and various modifications, the process of treating the workpiece with plasma discharge may also be performed between step S2 and step S3. The treatment of workpieces caused by plasma discharge can be performed using known plasma cleaning devices. By performing the plasma treatment as a stage before the step of mounting the
(5)在實施例及各變形例中，亦可在步驟S4與步驟S5之間執行進行底填處理的工序。亦即透過在工件W安裝半導體元件7並進行電漿處理後再進行底填處理，尤其藉由環氧樹脂等使凸塊8的周邊封裝。透過該底填處理，在步驟S5中可精度更佳地封裝半導體元件7。(5) In the embodiment and each modified example, the process of performing underfill processing may be performed between step S4 and step S5. That is, after mounting the
(6)在實施例及各變形例的步驟S1中，亦可視需要在托架1塗布底漆液。亦即在將底漆液塗布於托架1後，再塗布保持薄膜3的薄膜材並進行乾燥。底漆液未特別限定，在底漆液的例子方面，可舉出丙烯酸樹脂、胺基甲酸酯樹脂、環氧樹脂、聚矽氧樹脂等。(6) In the step S1 of the embodiment and each modified example, a primer solution may be applied to the
1:托架 3:保持薄膜 5:薄膜積層體 7:半導體元件 8:凸塊 9:封裝材 11:半導體裝置 13:薄膜積層機構 15:工件裝設機構 17:半導體安裝機構 19:封裝機構 21:載置台 23:塗布構件 25:工件供給部 27:工件搬送機構 29:腔室 30:軌道 31:保持台 35:推壓構件 37:缸體 39:真空裝置 40:電磁閥 41:電磁閥 43:控制部 47:上部模具 49:上部模具 50:模具 53:封裝材供給部 55:保持台 59:致動器 61:裝置搬送機構 HP:間隙部 W:工件 1: Bracket 3: Keep the film 5: Thin film laminate 7: Semiconductor components 8: Bump 9: Encapsulation material 11:Semiconductor device 13: Thin film lamination mechanism 15: Workpiece installation mechanism 17: Semiconductor mounting mechanism 19: Encapsulation mechanism 21: Carrying table 23: Coating components 25: Workpiece supply department 27: Workpiece conveying mechanism 29: chamber 30: track 31: holding table 35: push member 37: Cylinder 39: Vacuum device 40:Solenoid valve 41: Solenoid valve 43: Control Department 47: Upper mold 49: Upper mold 50: Mold 53:Packaging material supply department 55: Holding table 59: Actuator 61: Device transfer mechanism HP: Gap W: Workpiece
圖1係說明在實施例的半導體裝置的製造方法中之工序的流程圖。
圖2係顯示在實施例的半導體裝置的製造方法的各步驟中之半導體裝置的構成之剖面圖；(a)係顯示在步驟S1開始以前的狀態，(b)係顯示在步驟S1完成後的狀態，(c)係顯示在步驟S2完成後的狀態，(d)係顯示在步驟S3完成後的狀態，(e)係顯示在步驟S5完成後的狀態，(f)係顯示在步驟S6完成後的狀態。
圖3係實施例的工件裝設機構的縱剖面圖。
圖4係實施例的腔室的縱剖面圖。
圖5係實施例的封裝機構的縱剖面圖。
圖6係說明實施例的步驟S1之圖；(a)係顯示在塗布薄膜材之前的托架之圖，(b)係顯示在托架塗布有薄膜材的狀態之圖，(c)係顯示在塗布薄膜材之後的托架之圖。
圖7係說明實施例的步驟S2之圖。
圖8係說明實施例的步驟S2之圖。
圖9係說明實施例的步驟S2之圖。
圖10係說明實施例的步驟S2之圖。
圖11係說明實施例的步驟S2之圖。
圖12係說明實施例的步驟S2之圖。
圖13係說明實施例的步驟S3之圖。
圖14係說明實施例的步驟S3之圖。
圖15係說明實施例的步驟S3之圖。
圖16係說明實施例的步驟S5之圖。
圖17係說明實施例的步驟S5之圖。
圖18係說明實施例的步驟S5之圖。
圖19係說明實施例的步驟S5之圖。
圖20係說明實施例的步驟S6之圖。
圖21係說明實施例的步驟S6之圖。
圖22係說明實施例的步驟S7之圖。
圖23係說明習知例的問題點之圖；(a)係顯示在未使用保持薄膜的習知構成中之半導體元件的安裝過程之圖，(b)係顯示工件變形而發生半導體元件的安裝不良及安裝位置的偏移的狀態之圖，(c)係顯示相對於托架在水平方向發生工件的偏移的狀態之圖。
圖24係說明習知例的問題點之圖；(a)係顯示專利文獻1的習知例的構成之圖，(b)係顯示專利文獻1的習知例中的工件變形的狀態之圖。
圖25係說明依據實施例的構成的效果之圖。
圖26係說明變形例的構成之圖；(a)係顯示搬送用薄片及工件之立體圖，(b)係說明在變形例的步驟S2中，陸續放出搬送用薄片並進行工件的定位的狀態之圖，(c)係顯示在變形例的步驟S2中形成腔室的狀態之圖。
圖27係說明變形例的構成之圖；(a)係顯示在變形例的步驟S2中藉由差壓使工件變形成凸狀的狀態之圖，(b)係顯示在變形例的步驟S2中藉由差壓使工件與保持薄膜推壓接觸的狀態之圖。
圖28係說明變形例的構成之圖。
圖29係說明變形例的步驟S2之圖。
圖30係說明變形例的步驟S2之圖。
圖31係說明變形例的步驟S2之圖。
圖32係說明變形例的步驟S2之圖。
FIG. 1 is a flowchart illustrating steps in a method of manufacturing a semiconductor device according to an embodiment.
2 is a sectional view showing the structure of the semiconductor device in each step of the manufacturing method of the semiconductor device of the embodiment; (a) shows the state before step S1 starts, and (b) shows the state after step S1 is completed. State, (c) shows the state after step S2 is completed, (d) shows the state after step S3 is completed, (e) shows the state after step S5 is completed, (f) shows the state after step S6 is completed after state.
Fig. 3 is a longitudinal sectional view of the workpiece mounting mechanism of the embodiment.
Fig. 4 is a longitudinal sectional view of the chamber of the embodiment.
Fig. 5 is a longitudinal sectional view of the packaging mechanism of the embodiment.
Figure 6 is a diagram illustrating step S1 of the embodiment; (a) is a diagram showing the carriage before coating the film material, (b) is a diagram showing the state in which the carriage is coated with the film material, and (c) is a diagram showing View of the bracket after coating the film material.
FIG. 7 is a diagram illustrating step S2 of the embodiment.
FIG. 8 is a diagram illustrating step S2 of the embodiment.
FIG. 9 is a diagram illustrating step S2 of the embodiment.
FIG. 10 is a diagram illustrating step S2 of the embodiment.
FIG. 11 is a diagram illustrating step S2 of the embodiment.
FIG. 12 is a diagram illustrating step S2 of the embodiment.
Fig. 13 is a diagram illustrating step S3 of the embodiment.
Fig. 14 is a diagram illustrating step S3 of the embodiment.
Fig. 15 is a diagram illustrating step S3 of the embodiment.
Fig. 16 is a diagram illustrating step S5 of the embodiment.
Fig. 17 is a diagram illustrating step S5 of the embodiment.
Fig. 18 is a diagram illustrating step S5 of the embodiment.
Fig. 19 is a diagram illustrating step S5 of the embodiment.
Fig. 20 is a diagram illustrating step S6 of the embodiment.
Fig. 21 is a diagram illustrating step S6 of the embodiment.
Fig. 22 is a diagram illustrating step S7 of the embodiment.
Fig. 23 is a diagram illustrating the problems of the conventional example; (a) is a diagram showing the mounting process of the semiconductor element in the conventional structure without using a holding film, and (b) is a diagram showing the mounting of the semiconductor element due to deformation of the workpiece The diagram of the status of defects and deviation of the mounting position, (c) is a diagram showing the status of deviation of the workpiece in the horizontal direction with respect to the bracket.
Fig. 24 is a diagram illustrating problems of the conventional example; (a) is a diagram showing the configuration of the conventional example of
Claims (12)
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