TW202301674A - Cleaning method for normal-pressure epitaxial reaction chamber and epitaxial silicon wafer - Google Patents

Cleaning method for normal-pressure epitaxial reaction chamber and epitaxial silicon wafer Download PDF

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TW202301674A
TW202301674A TW111131069A TW111131069A TW202301674A TW 202301674 A TW202301674 A TW 202301674A TW 111131069 A TW111131069 A TW 111131069A TW 111131069 A TW111131069 A TW 111131069A TW 202301674 A TW202301674 A TW 202301674A
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reaction chamber
etching
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席勇
王力
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大陸商西安奕斯偉材料科技有限公司
大陸商西安奕斯偉矽片技術有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

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Abstract

The embodiment of the invention discloses a cleaning method for a normal-pressure epitaxial reaction chamber and an epitaxial silicon wafer. The cleaning method comprises the following steps: introducing a carrier gas into a reaction chamber at a first gas flow rate in a heating stage and a baking stage of an etching reaction; in the etching stage of the etching reaction, introducing the carrier gas and etching gas into the reaction chamber at a second gas flow rate; wherein the first gas flow rate is smaller than the second gas flow rate.

Description

用於常壓外延反應腔室的清潔方法及外延矽片Cleaning method for atmospheric pressure epitaxial reaction chamber and epitaxial silicon wafer

本發明為半導體製造技術領域，尤指一種常壓外延反應腔室的清潔方法及外延矽片。The invention belongs to the technical field of semiconductor manufacturing, in particular to a method for cleaning an epitaxial reaction chamber at normal pressure and an epitaxial silicon wafer.

作為當今半導體材料領域重要的組成部分，外延矽片可以採用真空外延沉積，減壓外延沉積和常壓外延沉積等方法在拋光矽片基板上沉積一層單晶矽外延層來製備。常壓外延沉積是目前使用最廣泛的一種外延層生長方式。As an important part of today's semiconductor material field, epitaxial silicon wafers can be prepared by depositing a single crystal silicon epitaxial layer on a polished silicon wafer substrate by vacuum epitaxial deposition, reduced pressure epitaxial deposition and atmospheric pressure epitaxial deposition. Atmospheric pressure epitaxial deposition is currently the most widely used epitaxial layer growth method.

在常壓外延沉積反應過程中，矽源反應氣體進入反應腔室後，不僅會在拋光矽片基板上生長一層單晶矽外延層，還會在反應腔室內壁上生長一層多晶矽。因此反應腔室在完成外延矽片生長後通常需要進行刻蝕反應，以使得反應腔室內壁上的多晶矽被充分地刻蝕掉從而確保外延矽片的品質穩定。During the atmospheric pressure epitaxial deposition reaction process, after the silicon source reaction gas enters the reaction chamber, not only a single crystal silicon epitaxial layer will be grown on the polished silicon wafer substrate, but also a layer of polycrystalline silicon will be grown on the inner wall of the reaction chamber. Therefore, after the growth of the epitaxial silicon wafer is completed in the reaction chamber, an etching reaction is generally required, so that the polysilicon on the inner wall of the reaction chamber is fully etched away to ensure the stable quality of the epitaxial silicon wafer.

有鑒於此，本發明提供一種常壓外延反應腔室的清潔方法及外延矽片；能夠充分刻蝕反應腔室內壁沉積的多晶矽，從而確保外延矽片的平坦度和降低外延矽片表面的粒汙染水準。In view of this, the present invention provides a method for cleaning an epitaxial reaction chamber at atmospheric pressure and an epitaxial silicon wafer; it can fully etch the polysilicon deposited on the inner wall of the reaction chamber, thereby ensuring the flatness of the epitaxial silicon wafer and reducing the particle size of the epitaxial silicon wafer surface. Pollution level.

本發明的技術方案是這樣實現的：第一方面，本發明提供了一種常壓外延反應腔室的清潔方法，該清潔方法包括：在刻蝕反應的升溫階段和烘烤階段，載氣以第一氣體流速通入至反應腔室中；在該刻蝕反應的刻蝕階段，該載氣以第二氣體流速與刻蝕氣體通入至該反應腔室中；其中，該第一氣體流速小於該第二氣體流速。The technical solution of the present invention is achieved in the following way: In the first aspect, the present invention provides a method for cleaning an atmospheric pressure epitaxial reaction chamber. A gas flow rate is passed into the reaction chamber; in the etching stage of the etching reaction, the carrier gas is passed into the reaction chamber at a second gas flow rate and the etching gas; wherein, the first gas flow rate is less than The second gas flow rate.

第二方面，本發明提供了一種外延矽片，該外延矽片在根據第一方面該的清潔方法清潔後的常壓外延反應腔室中製備而得。In a second aspect, the present invention provides an epitaxial silicon wafer, which is prepared in the atmospheric pressure epitaxial reaction chamber after cleaning according to the cleaning method of the first aspect.

本發明提供了一種常壓外延反應腔室的清潔方法及外延矽片；在刻蝕反應的升溫階段和烘烤階段，只在反應腔室中通入載氣，且減小載氣的注入速度，以使得載氣在高溫反應腔室中的溫度上升至更高的溫度並將熱量通過熱傳導的方式傳遞給上石英穹頂，在刻蝕階段，刻蝕氣體隨載氣一起進入反應腔室，且為保證反應腔室內有充足的刻蝕氣體，需要增大該刻蝕階段氣體注入速度。The invention provides a cleaning method of an atmospheric pressure epitaxial reaction chamber and an epitaxial silicon wafer; in the heating up stage and baking stage of the etching reaction, only the carrier gas is passed into the reaction chamber, and the injection speed of the carrier gas is reduced , so that the temperature of the carrier gas in the high-temperature reaction chamber rises to a higher temperature and the heat is transferred to the upper quartz dome by heat conduction. In the etching stage, the etching gas enters the reaction chamber together with the carrier gas, and In order to ensure that there is sufficient etching gas in the reaction chamber, it is necessary to increase the gas injection rate in this etching stage.

下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

參見圖1，其示出了能夠實施本發明實施例的常壓外延反應裝置1，該常壓外延反應裝置1可以包括：基座10，該基座10用於承載拋光矽片W；基座支撐架20，該基座支撐架20用於支撐基座10並在外延生長期間驅動基座10以一定速度繞中心軸線X旋轉，其中在基座10的旋轉過程中，拋光矽片W隨基座10一起繞中心軸線X旋轉，也就是說拋光矽片W相對於基座10是保持靜止的，由此，需要基座10的徑向邊緣與相鄰部件10A（通常為預熱環）之間具有較小的間隙G；上石英穹頂30A和下石英穹頂30B，該上石英穹頂30A和該下石英穹頂30B一起圍閉出將基座10以及基座支撐架20容納在其中的反應腔室RC，其中，基座10將反應腔室RC分隔成上反應腔室RC1和下反應腔室RC2，拋光矽片W放置在上反應腔室RC1中；通常，上反應腔室RC1中的氣壓略大於下反應腔室RC2中的氣壓使得上反應腔室RC1中的氣體會經由間隙G進入到下反應腔室RC2中；需要說明的是，反應腔室RC的內壁由側壁a、上石英穹頂30A和下石英穹頂30B組成；進氣口40，該進氣口40用於向上反應腔室RC1中輸送反應氣體，包括矽源氣體、氫氣、摻雜劑氣體，以便通過矽源氣體與氫氣反應生成矽原子並沉積在拋光矽片W上以在拋光矽片W上生長一層外延層，同時通過摻雜劑氣體對外延層進行摻雜以獲得所需的電阻率；排氣口50，該排氣口50用於將反應尾氣排出反應腔室RC；多個加熱燈泡60，該多個加熱燈泡60設置在上石英穹頂30A和下石英穹頂30B的週邊並用於透過上石英穹頂30A和下石英穹頂30B在反應腔室RC中提供用於氣相外延沉積反應的高溫環境，這也是上石英穹頂30A和下石英穹頂30B的材質為透明石英材質的原因；以及用於組裝常壓外延反應裝置1的各個元件的安裝部件70。Referring to FIG. 1 , it shows an atmospheric pressure epitaxial reaction device 1 capable of implementing an embodiment of the present invention. The atmospheric pressure epitaxial reaction device 1 may include: a base 10, which is used to carry a polished silicon wafer W; A support frame 20, the base support frame 20 is used to support the base 10 and drive the base 10 to rotate around the central axis X at a certain speed during epitaxial growth, wherein during the rotation of the base 10, the polished silicon wafer W follows the base The base 10 rotates together around the central axis X, that is to say, the polished silicon wafer W is kept stationary relative to the base 10, thereby requiring a gap between the radial edge of the base 10 and the adjacent part 10A (usually a preheating ring). There is a small gap G between them; an upper quartz dome 30A and a lower quartz dome 30B, the upper quartz dome 30A and the lower quartz dome 30B together enclose a reaction chamber in which the susceptor 10 and the susceptor support frame 20 are accommodated RC, wherein the base 10 divides the reaction chamber RC into an upper reaction chamber RC1 and a lower reaction chamber RC2, and the polished silicon wafer W is placed in the upper reaction chamber RC1; usually, the air pressure in the upper reaction chamber RC1 is slightly Greater than the air pressure in the lower reaction chamber RC2, the gas in the upper reaction chamber RC1 will enter the lower reaction chamber RC2 through the gap G; 30A and the lower quartz dome 30B; gas inlet 40, the gas inlet 40 is used to deliver reaction gas in the upper reaction chamber RC1, including silicon source gas, hydrogen gas, dopant gas, so that the silicon source gas reacts with hydrogen Silicon atoms are generated and deposited on the polished silicon wafer W to grow an epitaxial layer on the polished silicon wafer W, and at the same time, the epitaxial layer is doped with a dopant gas to obtain the required resistivity; the exhaust port 50, the row The gas port 50 is used to exhaust the reaction exhaust gas from the reaction chamber RC; a plurality of heating bulbs 60 are arranged on the periphery of the upper quartz dome 30A and the lower quartz dome 30B and are used to penetrate the upper quartz dome 30A and the lower quartz dome 30B provides a high-temperature environment for vapor phase epitaxial deposition reactions in the reaction chamber RC, which is why the upper quartz dome 30A and the lower quartz dome 30B are made of transparent quartz; and are used to assemble the atmospheric pressure epitaxy reaction device 1 Mounting parts 70 for each component.

基於該常壓外延反應裝置1中的反應腔室RC連續生產外延矽片的過程中，反應腔室RC每進行一次或多次的外延矽片生長，反應腔室RC需要進行刻蝕（也稱之為“自清潔”），在這個過程中，外延矽片的沉積反應和反應腔室RC的刻蝕反應在反應腔室RC中交替發生。In the process of continuously producing epitaxial silicon wafers based on the reaction chamber RC in the atmospheric pressure epitaxial reaction device 1, each time the reaction chamber RC performs one or more epitaxial silicon wafer growth, the reaction chamber RC needs to be etched (also called It is called "self-cleaning"). In this process, the deposition reaction of the epitaxial silicon wafer and the etching reaction of the reaction chamber RC occur alternately in the reaction chamber RC.

此外，在大批量生產過程中，發現更換新的石英穹頂後，石英穹頂使用的時間越久，反應腔室RC製備出的外延矽片的平坦度越差，外延矽片表面顆粒汙染水準越大，同時這也說明反應腔室RC內壁的刻蝕反應不夠充分，導致上石英穹頂30A上殘餘的多晶矽對外延矽片的平坦度產生惡化作用；並且上石英穹頂30A位於外延矽片的正上方，在進行外延生長反應過程中上石英穹頂30A上殘餘的多晶矽會脫落並掉落至外延矽片的表面以使得外延矽片表面的顆粒汙染水準增大。經研究發現，上石英穹頂30A上的多晶矽刻蝕不充分主要是由於在刻蝕反應過程中，當反應腔室RC內部的溫度上升至最高點時，上石英穹頂30A的溫度沒有上升至刻蝕反應的最佳溫度。參見圖2，其示出了相關刻蝕反應各階段上石英穹頂的溫度隨時間變化趨勢示意圖，其中橫座標表示刻蝕反應所用時間，縱座標表示刻蝕反應中上石英穹頂30A的溫度。由圖2可以看出，刻蝕反應包括升溫階段，烘烤階段，刻蝕階段和降溫階段，為了便於識別各階段所用時間，在圖2中採用黑色豎直虛線進行各階段之間的區分。由圖2可以看出，相關刻蝕反應中，升溫階段和烘烤階段的總用時約為145秒(s)；烘烤結束後，在刻蝕初始階段，上石英穹頂30A的溫度為577°C，由於該溫度並不是刻蝕反應的最佳溫度，因此在該溫度下不能夠對上石英穹頂30A進行充分刻蝕。需要說明的是，刻蝕反應的最佳溫度為590°C以上。因此，為了盡可能地刻蝕去除上石英穹頂30A沉積的多晶矽，只能延長刻蝕反應時間，如圖2所示，在整個刻蝕反應階段，以設定的氣體流速通入載氣和刻蝕氣體，刻蝕階段所用時間約為105秒(s)。In addition, in the process of mass production, it was found that after replacing the new quartz dome, the longer the quartz dome is used, the worse the flatness of the epitaxial silicon wafer prepared in the reaction chamber RC, and the greater the level of particle contamination on the surface of the epitaxial silicon wafer. At the same time, this also shows that the etching reaction on the inner wall of the reaction chamber RC is not sufficient, resulting in the deterioration of the flatness of the epitaxial silicon wafer by the residual polysilicon on the upper quartz dome 30A; and the upper quartz dome 30A is located directly above the epitaxial silicon wafer, During the epitaxial growth reaction, the residual polysilicon on the upper quartz dome 30A will fall off and fall to the surface of the epitaxial silicon wafer, so that the particle contamination level on the surface of the epitaxial silicon wafer increases. It has been found through research that the insufficient etching of polysilicon on the upper quartz dome 30A is mainly due to the fact that during the etching reaction process, when the temperature inside the reaction chamber RC rises to the highest point, the temperature of the upper quartz dome 30A does not rise to the etching level. the optimum temperature for the reaction. Referring to FIG. 2 , it shows a schematic diagram of the temperature variation trend of the upper quartz dome at each stage of the relevant etching reaction with time, wherein the abscissa indicates the time used for the etching reaction, and the ordinate indicates the temperature of the upper quartz dome 30A in the etching reaction. It can be seen from Figure 2 that the etching reaction includes a heating stage, a baking stage, an etching stage, and a cooling stage. In order to facilitate the identification of the time spent in each stage, black vertical dotted lines are used in Figure 2 to distinguish between stages. It can be seen from Fig. 2 that in the relevant etching reaction, the total time spent in the heating stage and the baking stage is about 145 seconds (s); after the baking is finished, in the initial stage of etching, the temperature of the upper quartz dome 30A is 577 °C, since this temperature is not the optimal temperature for the etching reaction, the upper quartz dome 30A cannot be sufficiently etched at this temperature. It should be noted that the optimum temperature of the etching reaction is above 590°C. Therefore, in order to etch and remove the polysilicon deposited on the upper quartz dome 30A as much as possible, the etching reaction time can only be prolonged. As shown in FIG. Gas, the time used in the etching phase is about 105 seconds (s).

需要說明的是，上石英穹頂30A溫度上升的熱量來源有兩種，一種是加熱燈泡60以熱輻射的形式傳遞熱量至上石英穹頂30A，一種是反應腔室RC內的氣體通過熱傳導的形式傳遞熱量至上石英穹頂30A。It should be noted that there are two heat sources for the temperature rise of the upper quartz dome 30A, one is that the heating bulb 60 transfers heat to the upper quartz dome 30A in the form of thermal radiation, and the other is that the gas in the reaction chamber RC transfers heat in the form of heat conduction Supreme Quartz Dome 30A.

如上所述，本發明實施例期望在刻蝕反應的不同階段，通過控制通入反應腔室RC載氣的氣體流速來增強氣體熱傳導的溫度，從而提高刻蝕階段初期上石英穹頂30A的溫度，且在該刻蝕反應的不同階段，該反應腔室RC中的壓力保持常壓不變。參見圖3，其示出了本發明實施例提供的一種常壓外延反應腔室的清潔方法，其能夠應用於圖1所示的常壓外延反應裝置1中，該方法包括：S301、在刻蝕反應的升溫階段和烘烤階段，載氣以第一氣體流速通入至反應腔室中；S302、在該刻蝕反應的刻蝕階段，該載氣以第二氣體流速與刻蝕氣體通入至該反應腔室中；其中，該第一氣體流速小於該第二氣體流速。As mentioned above, the embodiment of the present invention expects to increase the temperature of the heat conduction of the gas by controlling the gas flow rate of the carrier gas fed into the reaction chamber RC at different stages of the etching reaction, thereby increasing the temperature of the upper quartz dome 30A at the initial stage of the etching stage, And in different stages of the etching reaction, the pressure in the reaction chamber RC remains constant. Referring to FIG. 3 , it shows a method for cleaning an atmospheric pressure epitaxy reaction chamber provided by an embodiment of the present invention, which can be applied to the atmospheric pressure epitaxy reaction device 1 shown in FIG. 1 , and the method includes: S301. In the heating stage and baking stage of the etching reaction, the carrier gas is passed into the reaction chamber at the first gas flow rate; S302. In the etching stage of the etching reaction, the carrier gas is passed through the etching gas at the second gas flow rate into the reaction chamber; wherein, the first gas flow rate is less than the second gas flow rate.

對於圖3所示的技術方案，在刻蝕反應的升溫階段和烘烤階段，只在反應腔室RC中通入載氣，且減小載氣的注入速度，以使得載氣在高溫反應腔室RC中的溫度上升至更高的溫度並將熱量通過熱傳導的方式傳遞給上石英穹頂30A，在刻蝕階段，刻蝕氣體隨載氣一起進入反應腔室RC，且為保證反應腔室RC內有充足的刻蝕氣體，需要增大該階段氣體注入速度。For the technical scheme shown in Figure 3, during the heating up phase and baking phase of the etching reaction, only the carrier gas is introduced into the reaction chamber RC, and the injection speed of the carrier gas is reduced so that the carrier gas is in the high temperature reaction chamber. The temperature in the chamber RC rises to a higher temperature and heat is transferred to the upper quartz dome 30A by means of heat conduction. During the etching phase, the etching gas enters the reaction chamber RC together with the carrier gas, and in order to ensure that the reaction chamber RC There is sufficient etching gas inside, and it is necessary to increase the gas injection rate at this stage.

對於圖3所示的技術方案，在一些可能的實現方式中，該載氣為氫氣H 2，該刻蝕氣體為氯化氫HCl氣體。可以理解地，刻蝕氣體採用氯化氫氣體HCl，在刻蝕階段，刻蝕氣體HCl與上石英穹頂30A上沉積的多晶矽在高溫下發生化學反應，生成三氯氫矽SiHCl 3、氯化矽SiCl 4和氫氣H 2的混合物，具體化學反應方程式為：

Figure 02_image001
。這些化學反應生成的混合物會隨著載氣H 2排出反應腔室RC，且不會和載氣H 2發生化學反應。 For the technical solution shown in FIG. 3 , in some possible implementation manners, the carrier gas is hydrogen H 2 , and the etching gas is hydrogen chloride HCl gas. Understandably, the etching gas is hydrogen chloride gas HCl. During the etching stage, the etching gas HCl reacts with the polysilicon deposited on the upper quartz dome 30A at high temperature to generate trichlorosilane SiHCl 3 and silicon chloride SiCl 4 And the mixture of hydrogen H 2 , the specific chemical reaction equation is:
Figure 02_image001
. The mixture generated by these chemical reactions will exit the reaction chamber RC along with the carrier gas H 2 and will not chemically react with the carrier gas H 2 .

對於圖3所示的技術方案，在一些可能的實現方式中，在該刻蝕反應的升溫階段和烘烤階段，該載氣的第一氣體流速不大於40公升/每分鐘(L/min)；在該刻蝕反應的刻蝕階段，該載氣的第二氣體流速處於40~60公升/每分鐘(L/min)之間。可以理解地，在本發明實施例中，儘管在升溫階段和烘烤階段，減小了載氣的注入速度；在刻蝕階段，為了保證反應腔室RC內刻蝕氣體的濃度，因此需要加大載氣的注入速度。For the technical solution shown in Figure 3, in some possible implementations, during the heating up phase and baking phase of the etching reaction, the first gas flow rate of the carrier gas is not greater than 40 liters/minute (L/min) ; In the etching stage of the etching reaction, the second gas flow rate of the carrier gas is between 40-60 liters/minute (L/min). It can be understood that in the embodiment of the present invention, although the injection rate of the carrier gas is reduced during the heating up stage and the baking stage; in the etching stage, in order to ensure the concentration of the etching gas in the reaction chamber RC, it is necessary to Injection velocity of large carrier gas.

可以理解地，整個刻蝕反應包括升溫階段，烘烤階段，刻蝕階段和降溫階段，在本發明實施例中反應腔室RC為常壓反應腔室，也就是說無論如何設定載氣的氣體流速大小，反應腔室RC都要維持在常壓下。因此，若降低載氣的注入速度，為維持反應腔室RC的內部壓力不變，需要減小載氣的排氣速度。如此，載氣進入高溫的反應腔室RC後會停留更久，以使得反應腔室RC內部載氣的溫度會上升至更高。It can be understood that the entire etching reaction includes a heating stage, a baking stage, an etching stage and a cooling stage. In the embodiment of the present invention, the reaction chamber RC is a normal pressure reaction chamber, that is to say, no matter how the carrier gas is set Regardless of the flow rate, the reaction chamber RC must be maintained at normal pressure. Therefore, if the injection rate of the carrier gas is reduced, in order to keep the internal pressure of the reaction chamber RC constant, the exhaust rate of the carrier gas needs to be reduced. In this way, the carrier gas stays longer after entering the high-temperature reaction chamber RC, so that the temperature of the carrier gas inside the reaction chamber RC will rise to a higher level.

此外，在刻蝕階段採用第二流速向反應腔室RC中注入載氣和刻蝕氣體，能夠保證刻蝕階段中刻蝕氣體的濃度，進而保證刻蝕效果。In addition, injecting the carrier gas and the etching gas into the reaction chamber RC at the second flow rate in the etching stage can ensure the concentration of the etching gas in the etching stage, thereby ensuring the etching effect.

需要說明的是，在本發明實施例中，可選地，該第二氣體流速為相關刻蝕反應中設定的氣體流速。It should be noted that, in the embodiment of the present invention, optionally, the second gas flow rate is the gas flow rate set in the relevant etching reaction.

對於圖3所示的技術方案，在一些可能的實現方式中，在該刻蝕反應中，該升溫階段和該烘烤階段的總用時為142秒(s)；且在該刻蝕階段初期，上石英穹頂30A的溫度為596°C。For the technical solution shown in Figure 3, in some possible implementations, in the etching reaction, the total time spent on the heating stage and the baking stage is 142 seconds (s); and at the initial stage of the etching stage , the temperature of the upper quartz dome 30A is 596°C.

參見圖4，其示出本發明實施例刻蝕反應不同階段反應腔室RC溫度隨時間的變化趨勢示意圖，其中橫座標表示刻蝕反應所用時間，縱座標表示刻蝕反應中上石英穹頂30A的溫度，且在圖4中採用黑色豎直虛線進行各階段之間的區分。由圖4可以看出，在本發明實施例中，升溫階段和烘烤階段的總用時為142秒(s)，相比於圖2中相關刻蝕反應中升溫階段和烘烤階段的總用時145秒(s)可知，通過本發明實施例提供的清潔方法能夠降低升溫階段和烘烤階段的所用時間。其次，在本發明實施例中，烘烤結束後，在刻蝕階段初期上石英穹頂30A的溫度為596°C，達到了刻蝕反應的最佳溫度，且整個刻蝕階段的時間約為48秒(s)，與圖2中相關刻蝕反應中刻蝕階段所用時間為105秒(s)相比，極大地縮短了刻蝕反應時間，在充分去除上石英穹頂30A上沉積的多晶矽同時，節約了刻蝕時間，提高了刻蝕效率。Referring to FIG. 4, it shows a schematic diagram of the variation trend of the temperature of the reaction chamber RC with time in different stages of the etching reaction in the embodiment of the present invention, wherein the abscissa indicates the time used for the etching reaction, and the ordinate indicates the temperature of the upper quartz dome 30A in the etching reaction. temperature, and the black vertical dotted lines are used in Fig. 4 to distinguish between the stages. It can be seen from Fig. 4 that in the embodiment of the present invention, the total time of the heating stage and the baking stage is 142 seconds (s), which is compared with the total time of the heating stage and the baking stage in the relevant etching reaction in Fig. 2 It can be seen that the cleaning method provided by the embodiment of the present invention can reduce the time spent in the heating stage and the baking stage by taking 145 seconds (s). Secondly, in the embodiment of the present invention, after the baking is finished, the temperature of the upper quartz dome 30A is 596°C at the initial stage of the etching stage, reaching the optimal temperature of the etching reaction, and the time of the entire etching stage is about 48°C. second (s), compared with the time used for the etching stage in the relevant etching reaction in Fig. 2 being 105 seconds (s), the etching reaction time is greatly shortened, and while the polysilicon deposited on the upper quartz dome 30A is fully removed, The etching time is saved and the etching efficiency is improved.

最後，本發明實施例還提供了一種外延矽片，該外延矽片在由前述技術方案所述的清潔方法清潔後的常壓外延反應腔室中製備得到。Finally, the embodiment of the present invention also provides an epitaxial silicon wafer, which is prepared in the atmospheric pressure epitaxial reaction chamber cleaned by the cleaning method described in the foregoing technical solution.

需要說明的是：本發明實施例所記載的技術方案之間，在不衝突的情況下，可以任意組合。It should be noted that: the technical solutions described in the embodiments of the present invention can be combined arbitrarily if there is no conflict.

以上所述，僅為本發明的具體實施方式，但本發明的保護範圍並不局限於此，任何熟悉本技術領域具通常知識者在本發明揭露的技術範圍內，可輕易想到變化或替換，都應涵蓋在本發明的保護範圍之內。因此，本發明的保護範圍應以所述權利要求的保護範圍為準。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone familiar with the technical field with ordinary knowledge can easily think of changes or substitutions within the technical scope disclosed in the present invention. All should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.

1:常壓外延反應裝置 10:基座 10A:相鄰部件 20:基座支撐架 30A:上石英穹頂 30B:下石英穹頂 40:進氣口 50:排氣口 60:加熱燈泡 70:安裝部件 W:拋光矽片 X:中心軸線 G:間隙 RC:反應腔室 RC1:上反應腔室 RC2:下反應腔室 a:側壁 S301~S302:方法步驟 1: Atmospheric pressure epitaxy reaction device 10: Base 10A: Adjacent parts 20: Base support frame 30A: Upper Quartz Dome 30B: Lower Quartz Dome 40: air inlet 50: Exhaust port 60:Heating bulb 70:Installing components W: polished silicon wafer X: central axis G: Gap RC: reaction chamber RC1: upper reaction chamber RC2: Lower Reaction Chamber a: side wall S301~S302: method steps

圖1為本發明提供的一種常壓外延反應裝置結構示意圖； 圖2為本發明提供的相關刻蝕反應各階段上石英穹頂的溫度隨時間變化趨勢示意圖； 圖3為本發明提供的一種常壓外延反應腔室的清潔方法流程示意圖； 圖4為本發明提供的刻蝕反應各階段上石英穹頂的溫度隨時間變化趨勢示意圖。 Fig. 1 is a kind of atmospheric pressure epitaxial reaction apparatus structure schematic diagram provided by the present invention; Fig. 2 is a schematic diagram of the temperature variation trend of the quartz dome at each stage of the relevant etching reaction provided by the present invention with time; 3 is a schematic flow chart of a cleaning method for an atmospheric pressure epitaxy reaction chamber provided by the present invention; FIG. 4 is a schematic diagram showing the trend of temperature variation with time of the quartz dome at each stage of the etching reaction provided by the present invention.

S301~S302:方法步驟 S301~S302: method steps

Claims (7)

一種用於常壓外延反應腔室的清潔方法，其步驟包括： 在刻蝕反應的升溫階段和烘烤階段，載氣以第一氣體流速通入至反應腔室中； 在該刻蝕反應的刻蝕階段，該載氣以第二氣體流速與刻蝕氣體通入至該反應腔室中； 其中，該第一氣體流速小於該第二氣體流速。 A cleaning method for an atmospheric pressure epitaxial reaction chamber, the steps comprising: In the heating stage and baking stage of the etching reaction, the carrier gas is passed into the reaction chamber at the first gas flow rate; In the etching stage of the etching reaction, the carrier gas is passed into the reaction chamber with the etching gas at a second gas flow rate; Wherein, the first gas flow rate is smaller than the second gas flow rate. 如請求項1所述之用於常壓外延反應腔室的清潔方法，其中該載氣為氫氣H 2，該刻蝕氣體為氯化氫HCl氣體。 The cleaning method for an atmospheric pressure epitaxy reaction chamber as described in claim 1, wherein the carrier gas is hydrogen H 2 , and the etching gas is hydrogen chloride HCl gas. 如請求項1所述之用於常壓外延反應腔室的清潔方法，其中在該刻蝕反應的升溫階段和烘烤階段，該載氣的第一氣體流速不大於40公升/每分鐘(L/min)。The cleaning method for the atmospheric pressure epitaxial reaction chamber as described in claim 1, wherein in the heating up stage and baking stage of the etching reaction, the first gas flow rate of the carrier gas is not more than 40 liters/minute (L /min). 如請求項1所述之用於常壓外延反應腔室的清潔方法，其中在該刻蝕反應的刻蝕階段，該載氣的第二氣體流速處於40~60公升/每分鐘(L/min)之間。The cleaning method for the atmospheric pressure epitaxial reaction chamber as described in claim 1, wherein in the etching stage of the etching reaction, the second gas flow rate of the carrier gas is at 40~60 liters/minute (L/min )between. 如請求項1所述之用於常壓外延反應腔室的清潔方法，其中在該刻蝕反應中，該升溫階段和該烘烤階段的總用時為142秒(s)。The cleaning method for an atmospheric pressure epitaxy reaction chamber as described in claim 1, wherein in the etching reaction, the total time spent in the heating phase and the baking phase is 142 seconds (s). 如請求項1所述之用於常壓外延反應腔室的清潔方法，其中在該刻蝕階段初期，上石英穹頂的溫度為596°C。The method for cleaning an atmospheric pressure epitaxy reaction chamber as claimed in claim 1, wherein the temperature of the upper quartz dome is 596° C. at the beginning of the etching stage. 一種外延矽片，該外延矽片在如請求項1至6任一項所述之用於常壓外延反應腔室的清潔方法清潔後的常壓外延反應腔室中製備而得。An epitaxial silicon wafer, which is prepared in an atmospheric pressure epitaxial reaction chamber cleaned by the method for cleaning an atmospheric pressure epitaxial reaction chamber as described in any one of claims 1 to 6.
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