JPH05259091A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH05259091A JPH05259091A JP5462992A JP5462992A JPH05259091A JP H05259091 A JPH05259091 A JP H05259091A JP 5462992 A JP5462992 A JP 5462992A JP 5462992 A JP5462992 A JP 5462992A JP H05259091 A JPH05259091 A JP H05259091A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- substrate
- oxide film
- concentration
- germane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体装置の製造方
法に関するもので、特にＳｉ（シリコン）及びＳｉ−Ｇ
ｅ（シリコン−ゲルマニウム）の気相成長に使用される
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and particularly to Si (silicon) and Si-G.
e (silicon-germanium) is used for vapor phase growth.
【０００２】[0002]
【従来の技術】一般に、シリコン（Ｓｉ）の基板にシリ
コンを気相成長させたエピタキシャル基板はＭＯＳデバ
イス等に用いられている。このエピタキシャル基板の製
造は、温度が約１１００〜１２００℃の水素（Ｈ2 ）の
雰囲気中にＳｉ基板をおいて、塩酸（ＨＣｌ）でエッチ
ング、あるいは水素雰囲気中での熱処理を行うことによ
り、シリコン基板の表面の自然酸化膜を除去し、その後
シリコン水素化合物（例えば、ＳｉＨ4 、Ｓｉ2 Ｈ6 ）
あるいは、シリコン塩化物（例えば、ＳｉＨ2 、Ｃ
ｌ2 、ＳｉＨＣｌ3 、ＳｉＣｌ4 ）等のエピタキシャル
ソ−スガスを用いてシリコン基板の表面に単結晶のシリ
コン膜を堆積させている。2. Description of the Related Art Generally, an epitaxial substrate in which silicon is vapor-deposited on a silicon (Si) substrate is used for MOS devices and the like. This epitaxial substrate is manufactured by placing the Si substrate in an atmosphere of hydrogen (H 2 ) at a temperature of about 1100 to 1200 ° C., etching with hydrochloric acid (HCl), or performing heat treatment in a hydrogen atmosphere to obtain silicon. The native oxide film on the surface of the substrate is removed, and then silicon hydride compounds (eg, SiH 4 , Si 2 H 6 )
Alternatively, silicon chlorides (eg SiH 2 , C
A single crystal silicon film is deposited on the surface of the silicon substrate by using an epitaxial source gas such as l 2 , SiHCl 3 , or SiCl 4 ).
【０００３】[0003]
【発明が解決しようとする課題】上述のように、従来の
製造方法においては、気相成長が約１１００〜１２００
℃と高温の状態で行われ、この高温状態において気相成
長層を形成する前に、自然酸化膜を除去している。とこ
ろが、デバイスの微細化に伴って、プロセスの温度が高
くなればなるほど気相成長中の雰囲気（例えば、反応室
の石英菅、サセプタ）からの汚染の影響、あるいは基板
から気相成長層への不純物の拡散の影響が顕著になる。
このため、気相成長プロセスを含む全プロセスの低温化
が必要となってきている。As described above, in the conventional manufacturing method, vapor phase growth is about 1100 to 1200.
It is performed at a temperature as high as 0 ° C., and the natural oxide film is removed before forming the vapor phase growth layer at this high temperature. However, with the miniaturization of devices, the higher the temperature of the process, the more the influence of contamination from the atmosphere during the vapor phase growth (eg, the quartz tube in the reaction chamber, the susceptor) or the growth of the substrate to the vapor phase growth layer. The influence of the diffusion of impurities becomes remarkable.
Therefore, it is necessary to lower the temperature of all processes including the vapor phase growth process.
【０００４】しかしながら、１０００℃以下の温度で
は、水素ガス（Ｈ2 ）による酸化膜（ＳｉＯ2 ）のエッ
チングレ−トが極めて低くなるという問題がある。（例
えば、３０Ｔｏｒｒ、９００℃で０．１３×１０-10 ｍ
／ｍｉｎ）。また、８００〜１０００℃の温度での自然
酸化膜の除去としては、高真空中で熱処理を行うことに
よって可能となるが、これを気相成長し応用する場合は
装置が複雑になるという問題があった。However, at a temperature of 1000 ° C. or lower, there is a problem that the etching rate of the oxide film (SiO 2 ) by hydrogen gas (H 2 ) becomes extremely low. (For example, 0.13 × 10 -10 m at 30 Torr and 900 ° C)
/ Min). Further, the natural oxide film can be removed at a temperature of 800 to 1000 ° C. by performing a heat treatment in a high vacuum, but when this is vapor-deposited and applied, the apparatus becomes complicated. there were.
【０００５】本発明は、上記事情を考慮してなされたも
のであって、可及的に簡単な装置を用いて低温で気相成
長層を形成することのできる、半導体装置の製造方法を
提供することを目的とする。The present invention has been made in consideration of the above circumstances, and provides a method for manufacturing a semiconductor device capable of forming a vapor phase growth layer at a low temperature using an apparatus as simple as possible. The purpose is to do.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、この発明では、シリコン又はゲルマニウムが堆積し
ない濃度の、ゲルマン及びシリコン水素化物、或いはゲ
ルマン及びシリコン塩化物、或いはゲルマンのみから成
るガスの雰囲気中にシリコン基板を置いて、シリコン基
板表面の酸化膜を除去する工程と、その後、所定濃度の
シリコン水素化物、或いはシリコン塩化物から成るエピ
タキシャルソ−スガス或いはゲルマンをを用いて前記シ
リコン基板表面にエピタキシャル成長させる工程とを具
備することを特徴としている。In order to achieve the above object, according to the present invention, a gas containing only germane and silicon hydride, germane and silicon chloride, or germane in a concentration that does not deposit silicon or germanium is used. A step of placing a silicon substrate in an atmosphere to remove an oxide film on the surface of the silicon substrate, and then using an epitaxial source gas or germane made of silicon hydride or silicon chloride having a predetermined concentration, the surface of the silicon substrate And a step of epitaxially growing.
【０００７】[0007]
【作用】このように構成された本発明の製造方法によれ
ば、シリコン基板表面の酸化膜の除去が、シリコン及び
ゲルマニウムが堆積しない濃度の酸化膜除去機能ガスの
雰囲気中で行われることにより、従来の気相成長装置を
用いることができるとともに、従来よりも低温で行うこ
とができる。According to the manufacturing method of the present invention thus configured, the oxide film on the surface of the silicon substrate is removed in the atmosphere of the oxide film removing functional gas having a concentration at which silicon and germanium are not deposited, A conventional vapor phase growth apparatus can be used, and it can be performed at a lower temperature than before.
【０００８】[0008]
（実施例１）本発明の第一の実施例を［図１］及び［図
２］を参照し、詳細に説明する。まず、例えば、ＣＺ法
により生成された鏡面仕上げのシリコン単結晶基板１１
を洗浄する（［図１］ステップＦ１参照）。この洗浄
は、フッ酸の水溶液（ＨＦ：Ｈ2 Ｏ＝１：２００）に、
上記シリコン単結晶基板１１を３分間浸した後、超純水
で１０分間水洗いし、リンサ−ドライヤを用いて乾燥さ
せることによって行われる。この時、［図２ａ］に示す
ように、シリコン単結晶基板１１表面上は、自然酸化膜
（ＳｉＯ2 ）１２によって覆われている。次に、この基
板を例えばコ−ルドウォ−ル型縦型気相成長装置内に置
き、水素ガス（Ｈ2 ）雰囲気中で１０００℃以下の所定
温度（例えば、８００℃）まで昇温する（［図１］ステ
ップＦ２参照）。次に、水素ガス雰囲気中で低濃度、す
なわちシリコン又はゲルマニウム（Ｇｅ）が堆積しない
程度の、ゲルマン及びシリコン水素化物、或いはゲルマ
ン及びシリコン塩化物、或いはゲルマンのみから成るガ
ス、例えば、濃度１５ｐｐｍのゲルマン（ＧｅＨ4 ）及
び濃度１５ｐｐｍのシラン（ＳｉＨ4 ）及び水素
（Ｈ2 ）から成る混合ガスを上記気相成長装置内に導入
し、所定の条件、例えば、温度８００℃、圧力１０Ｔｏ
ｒｒ下で熱処理を行う（［図１］ステップＦ３参照）。
［図２ｂ］に示すように、この熱処理によってシリコン
基板１１表面上の自然酸化膜１２が除去される。その
後、水素ガス雰囲気中で所定濃度のエピタキシャルソ−
スガス、例えば、濃度が０．２パ−セントのモノシラン
を含んだモノシラン及び水素から成るガスを上記気相成
長装置に導入し、所定の条件、例えば、温度８００℃、
圧力１０Ｔｏｒｒ下で気相成長を行う（［図１］ステッ
プＦ４参照）。すると、［図２ｃ］に示すように、シリ
コン単結晶基板１１表面上にシリコン単結晶膜１３をエ
ピタキシャル成長させることができる。その後、常温ま
で降温させることによって、エピタキシャル基板が完成
する（［図１］ステップＦ５参照）。(Embodiment 1) A first embodiment of the present invention will be described in detail with reference to FIG. 1 and FIG. First, for example, a mirror-finished silicon single crystal substrate 11 produced by the CZ method
Are washed (see step F1 in [FIG. 1]). This washing is performed with an aqueous solution of hydrofluoric acid (HF: H 2 O = 1: 200).
The silicon single crystal substrate 11 is dipped for 3 minutes, washed with ultrapure water for 10 minutes, and dried using a rinse dryer. At this time, as shown in FIG. 2A, the surface of the silicon single crystal substrate 11 is covered with a natural oxide film (SiO 2 ) 12. Next, this substrate is placed in, for example, a cold wall type vertical vapor deposition apparatus, and heated to a predetermined temperature of 1000 ° C. or lower (for example, 800 ° C.) in a hydrogen gas (H 2 ) atmosphere ([[ 1] See step F2). Next, a gas containing only germane and silicon hydride, germane and silicon chloride, or germane in a low concentration in a hydrogen gas atmosphere, that is, to the extent that silicon or germanium (Ge) is not deposited, for example, germane having a concentration of 15 ppm. (GeH 4 ) and a mixed gas of silane (SiH 4 ) and hydrogen (H 2 ) having a concentration of 15 ppm are introduced into the vapor phase growth apparatus, and a predetermined condition, for example, temperature 800 ° C., pressure 10 To.
Heat treatment is performed under rr (see step F3 in [FIG. 1]).
As shown in FIG. 2B, the natural oxide film 12 on the surface of the silicon substrate 11 is removed by this heat treatment. After that, the epitaxial solution with a predetermined concentration is formed in a hydrogen gas atmosphere.
Gas such as monosilane containing monosilane having a concentration of 0.2 percent and hydrogen is introduced into the vapor phase growth apparatus, and a predetermined condition, for example, a temperature of 800 ° C.,
Vapor growth is performed under a pressure of 10 Torr (see step F4 in [FIG. 1]). Then, as shown in FIG. 2c, the silicon single crystal film 13 can be epitaxially grown on the surface of the silicon single crystal substrate 11. After that, the temperature is lowered to room temperature to complete the epitaxial substrate (see step F5 in [FIG. 1]).
【０００９】低温下にて、従来の技術において形成され
た気相成長層と第一の実施例において形成された気相成
長層とを比較すると、前者では、多結晶シリコンが、後
者では、単結晶シリコンの成長が見られた。加えて、二
つの気相成長層の欠陥を観察すると、前者では、多数見
られたのに対し、後者では、１個／ｃｍ2 以下の欠陥密
度であった。これらの、気相成長層の結晶性の善し悪し
は、気相成長層工程前の前処理工程での自然酸化膜の除
去が完全に行われているか否かの違いである。従来の技
術においては、自然酸化膜はほとんど除去されず、第一
の実施例においては、完全に自然酸化膜が除去されてい
るのが明らかである。Comparing the vapor phase growth layer formed in the prior art with the vapor phase growth layer formed in the first embodiment at a low temperature, polycrystalline silicon is used in the former case and monocrystalline silicon is used in the latter case. Growth of crystalline silicon was observed. In addition, when observing defects in the two vapor phase growth layers, many defects were observed in the former, whereas the defect density was 1 defect / cm 2 or less in the latter. The goodness or badness of the crystallinity of the vapor phase growth layer depends on whether or not the native oxide film is completely removed in the pretreatment step before the vapor phase growth layer step. In the conventional technique, the natural oxide film is hardly removed, and in the first embodiment, it is apparent that the natural oxide film is completely removed.
【００１０】（実施例２）本発明の第二の実施例を［図
３］を参照し、詳細に説明する。第二の実施例は、シリ
コン表面にのみ気相成長させる選択気相成長に適用した
場合の例である。［図３ａ］に示すように、シリコン単
結晶基板２１の表面を熱酸化し、約０．２マイクロメ−
トルの厚さのシリコン酸化膜（ＳｉＯ2 ）２４を形成す
る。次に、［図３ｂ］に示すように、このシリコン酸化
膜２４を周知のフォトリソグラフィ技術によりパタ−ニ
ングを行い、直径が０．５〜２．０マイクロメ−トルの
開口部２５を形成する。次に、この基板に本発明を適用
する。すなわち、フッ酸の水溶液（ＨＦ：Ｈ2 Ｏ＝１：
２００）に、上記基板を３分間浸した後、超純水で１０
分間水洗いし、リンサ−ドライヤを用いて乾燥させる。
この時、［図３ｃ］に示すように、開口部のシリコンが
露出したシリコン単結晶基板２１の表面は、自然酸化膜
２２によって覆われている。そして、基板を気相成長装
置内に置き、水素ガス雰囲気中で約６５０℃まで昇温
し、以下、この温度を保つようにする。そして、例え
ば、シリコン又はゲルマニウム（Ｇｅ）が堆積しない程
度の、ゲルマン及びシリコン水素化物、或いはゲルマン
及びシリコン塩化物、或いはゲルマンのみから成るガ
ス、濃度１５ｐｐｍのゲルマン（ＧｅＨ4 ）及び濃度１
５ｐｐｍのシラン（ＳｉＨ4 ）及び水素（Ｈ2 ）から成
る混合ガスを上記気相成長装置内に導入し、温度６５０
℃、圧力５Ｔｏｒｒの条件下で２０分間熱処理を行う。
［図３ｄ］に示すように、この熱処理によって開口部の
底の自然酸化膜２２が除去される。その後、水素ガス雰
囲気中で所定濃度のエピタキシャルソ−スガス、例え
ば、濃度が０．１パ−セントのシラン及び０．０２パ−
セントのゲルマン及び水素から成るガスを上記気相成長
装置に導入する。［図３ｅ］に示すように、開口部のみ
にシリコン−ゲルマニウムを気相成長させて、シリコン
−ゲルマニウム単結晶膜２３をエピタキシャル成長させ
る。(Second Embodiment) A second embodiment of the present invention will be described in detail with reference to FIG. The second embodiment is an example applied to selective vapor phase growth in which vapor phase growth is performed only on the silicon surface. As shown in FIG. 3a, the surface of the silicon single crystal substrate 21 is thermally oxidized to about 0.2 μm.
A silicon oxide film (SiO 2 ) 24 having a thickness of torr is formed. Next, as shown in FIG. 3B, the silicon oxide film 24 is patterned by a well-known photolithography technique to form an opening 25 having a diameter of 0.5 to 2.0 micrometer. Next, the present invention is applied to this substrate. That is, an aqueous solution of hydrofluoric acid (HF: H 2 O = 1: 1)
200), soak the substrate for 3 minutes, and then use ultrapure water for 10 minutes.
Wash with water for a minute and dry with a rinse dryer.
At this time, as shown in FIG. 3C, the surface of the silicon single crystal substrate 21 where the silicon in the opening is exposed is covered with the natural oxide film 22. Then, the substrate is placed in a vapor phase growth apparatus, the temperature is raised to about 650 ° C. in a hydrogen gas atmosphere, and this temperature is maintained thereafter. Then, for example, a gas consisting of germane and silicon hydride, germane and silicon chloride, or germane only, to the extent that silicon or germanium (Ge) is not deposited, germane (GeH 4 ) at a concentration of 15 ppm, and a concentration of 1
A mixed gas of 5 ppm of silane (SiH 4 ) and hydrogen (H 2 ) was introduced into the vapor phase growth apparatus, and the temperature was raised to 650.
Heat treatment is performed for 20 minutes at a temperature of 5 ° C. and a pressure of 5 Torr.
As shown in FIG. 3d, this heat treatment removes the native oxide film 22 at the bottom of the opening. Thereafter, an epitaxial source gas having a predetermined concentration in a hydrogen gas atmosphere, for example, silane having a concentration of 0.1 percent and 0.02 percent is used.
A gas consisting of St. Germane and hydrogen is introduced into the vapor phase growth apparatus. As shown in FIG. 3e, silicon-germanium is vapor-grown only in the opening to epitaxially grow the silicon-germanium single crystal film 23.
【００１１】[0011]
【発明の効果】以上述べたように、本発明によれば、従
来の気相成長成長装置を用いて、低温でほぼ自然酸化膜
を除去できるとともに、気相成長層の結晶性及び膜厚の
均一性を大きく向上させることができる。As described above, according to the present invention, a conventional vapor phase growth apparatus can be used to remove almost a natural oxide film at a low temperature, and the crystallinity and film thickness of the vapor phase growth layer can be reduced. Uniformity can be greatly improved.
【図１】本発明の方法の（実施例１）を説明するフロ−
チャ−ト。FIG. 1 is a flow chart illustrating (Example 1) of the method of the present invention.
Chart.
【図２】本発明の方法の（実施例１）によって製造され
る半導体基板の工程断面図。FIG. 2 is a process sectional view of a semiconductor substrate manufactured by (Example 1) of the method of the present invention.
【図３】本発明の方法の（実施例２）によって製造され
る半導体基板の工程断面図。FIG. 3 is a process sectional view of a semiconductor substrate manufactured by (Example 2) of the method of the present invention.
１１、２１ シリコン単結晶基板（シリコン基板） １２、２２ 自然酸化膜（酸化膜） １３ 気相成長層（単結晶のシリコン膜） ２３ 気相成長層（単結晶のシリコン−ゲルマ
ニウム膜） ２４ シリコン酸化膜11, 21 Silicon single crystal substrate (silicon substrate) 12, 22 Natural oxide film (oxide film) 13 Vapor growth layer (single crystal silicon film) 23 Vapor growth layer (single crystal silicon-germanium film) 24 Silicon oxide film
Claims (1)
度の、ゲルマン及びシリコン水素化物、或いはゲルマン
及びシリコン塩化物、或いはゲルマンのみから成るガス
の雰囲気中にシリコン基板を置いて、シリコン基板表面
の酸化膜を除去する工程と、 その後、所定濃度のシリコン水素化物、或いはシリコン
塩化物から成るエピタキシャルソ−スガス或いはゲルマ
ンを用いて前記シリコン基板表面にエピタキシャル成長
させる工程とを具備することを特徴とする半導体装置の
製造方法。1. A silicon substrate is placed in an atmosphere of a gas containing only germane and silicon hydride, germane and silicon chloride, or germane in a concentration such that silicon or germanium is not deposited, and an oxide film on the surface of the silicon substrate is removed. A method of manufacturing a semiconductor device, which comprises a step of removing and a step of epitaxially growing on a surface of the silicon substrate by using an epitaxial source gas or germane made of silicon hydride or silicon chloride having a predetermined concentration. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5462992A JPH05259091A (en) | 1992-03-13 | 1992-03-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5462992A JPH05259091A (en) | 1992-03-13 | 1992-03-13 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05259091A true JPH05259091A (en) | 1993-10-08 |
Family
ID=12976054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5462992A Pending JPH05259091A (en) | 1992-03-13 | 1992-03-13 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05259091A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09190979A (en) * | 1996-01-10 | 1997-07-22 | Nec Corp | Selective silicon epitaxial growth method, and growth device |
| US5821158A (en) * | 1995-08-28 | 1998-10-13 | Nec Corporation | Substrate surface treatment method capable of removing a spontaneous oxide film at a relatively low temperature |
| JP2008085198A (en) * | 2006-09-28 | 2008-04-10 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device |
| JP2008538161A (en) * | 2005-03-31 | 2008-10-09 | 東京エレクトロン株式会社 | Method and system for removing oxide from a substrate |
| JP2009177202A (en) * | 2007-04-02 | 2009-08-06 | Hitachi Kokusai Electric Inc | Manufacturing method of semiconductor device, and substrate processing apparatus |
| JP2011023610A (en) * | 2009-07-16 | 2011-02-03 | Toshiba Corp | Method of fabricating semiconductor device |
| US8012885B2 (en) | 2007-04-02 | 2011-09-06 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device |
| JP2012094905A (en) * | 2007-03-09 | 2012-05-17 | Cree Inc | Thick nitride semiconductor structure with interlayer structure, and method of fabricating thick nitride semiconductor structure |
| JP2018093117A (en) * | 2016-12-06 | 2018-06-14 | 株式会社Sumco | Manufacturing method of epitaxial wafer |
| JP2020194899A (en) * | 2019-05-29 | 2020-12-03 | 信越半導体株式会社 | Manufacturing method for semiconductor silicon wafer |
-
1992
- 1992-03-13 JP JP5462992A patent/JPH05259091A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821158A (en) * | 1995-08-28 | 1998-10-13 | Nec Corporation | Substrate surface treatment method capable of removing a spontaneous oxide film at a relatively low temperature |
| JPH09190979A (en) * | 1996-01-10 | 1997-07-22 | Nec Corp | Selective silicon epitaxial growth method, and growth device |
| US6107197A (en) * | 1996-01-10 | 2000-08-22 | Nec Corporation | Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth |
| JP2008538161A (en) * | 2005-03-31 | 2008-10-09 | 東京エレクトロン株式会社 | Method and system for removing oxide from a substrate |
| JP2008085198A (en) * | 2006-09-28 | 2008-04-10 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device |
| JP2012094905A (en) * | 2007-03-09 | 2012-05-17 | Cree Inc | Thick nitride semiconductor structure with interlayer structure, and method of fabricating thick nitride semiconductor structure |
| US9054017B2 (en) | 2007-03-09 | 2015-06-09 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures |
| JP2009177202A (en) * | 2007-04-02 | 2009-08-06 | Hitachi Kokusai Electric Inc | Manufacturing method of semiconductor device, and substrate processing apparatus |
| US8012885B2 (en) | 2007-04-02 | 2011-09-06 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device |
| JP2011023610A (en) * | 2009-07-16 | 2011-02-03 | Toshiba Corp | Method of fabricating semiconductor device |
| JP2018093117A (en) * | 2016-12-06 | 2018-06-14 | 株式会社Sumco | Manufacturing method of epitaxial wafer |
| JP2020194899A (en) * | 2019-05-29 | 2020-12-03 | 信越半導体株式会社 | Manufacturing method for semiconductor silicon wafer |
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