TW202249106A - 晶圓的加工方法 - Google Patents
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Abstract
[課題]提供一種晶圓的加工方法,其可以將貼合晶圓的圍繞器件區域之外周剩餘區域的部分於脫離時的不良影響予以抑制。
[解決手段]一種晶圓的加工方法,包含以下步驟:將外周緣已被倒角之第一晶圓的具備器件區域以及外周剩餘區域之一面,貼合於第二晶圓的一面而形成貼合晶圓;將雷射光束沿著第一晶圓的外周緣來照射而形成環狀的改質區域來斷開成第一外周環狀部與中央區域;在第一晶圓的另一面貼附擴展膠帶;藉由擴張擴展膠帶,而以改質區域為起點來分割成外周環狀部與中央區域,使外周環狀部從貼合晶圓脫離;及對第一晶圓從另一面側進行磨削來薄化至成品厚度。
Description
本發明是有關於一種晶圓的加工方法。
在半導體器件的製造程序中,進行有如下的程序之貼合2片晶圓之加工:如TSV(矽穿孔,Through-Silicon Via)之3維積層晶片的程序、或將形成有像素的積體電路之2片晶圓貼合之BSI(背面照光,Back Side Illumination)型CMOS(互補式金屬氧化物半導體,Complementary Metal Oxide Semiconductor)影像感測器的程序等。
像這樣的貼合晶圓,雖然一般為了對應於器件晶片的低高度化而進行磨削並薄化,但因為將外周緣倒角而形成為R形狀,所以會因為磨削使外周緣成為銳角(所謂的刀緣),而容易產生邊緣的缺損。若此邊緣的缺損擴展,恐有導致器件的破損之疑慮,因此已提出有以下技術:在晶圓的磨削前,進行將外周部的一部分去除之處理(邊緣修整)(參照專利文獻1)。又,已提出有以下技術:沿著器件區域的外周緣照射雷射光束來形成改質層,而防止磨削中產生之邊緣的缺損擴展至器件(參照專利文獻2)。
先前技術文獻
專利文獻
專利文獻1:日本特開2000-173961號公報
專利文獻2:日本特開2006-108532號公報
發明欲解決之課題
然而,在專利文獻1所記載之方法中,有以下課題:有器件被切削時產生之切削屑污染,且即使進行洗淨也無法完全去除之情況。又,在專利文獻2所記載之方法中,有以下不同的課題:由於在磨削中外周剩餘區域部分呈環狀或圓弧狀地脫離,而損傷磨削磨石並對加工結果造成不良影響、或堆積在磨削裝置內而變得必須進行頻繁的清掃。
據此,本發明的目的是提供一種晶圓的加工方法,其可以將貼合晶圓的圍繞器件區域之外周剩餘區域的部分於脫離時的不良影響予以抑制。
用以解決課題之手段
根據本發明,可提供一種晶圓的加工方法,其具備有以下步驟:
貼合晶圓形成步驟,將第一晶圓的一面貼合於第二晶圓的一面而形成貼合晶圓,前述第一晶圓於該一面具備形成有器件之器件區域、與包圍該器件區域之外周剩餘區域,且外周緣已被倒角;
斷開步驟,將對該第一晶圓具有穿透性之波長的雷射光束,沿著距離該第一晶圓的外周緣預定距離內側的位置來照射,而形成環狀的改質區域,將該第一晶圓斷開成對應於該外周剩餘區域之外周環狀部、與對應於該器件區域之中央區域;
擴展膠帶貼附步驟,在該斷開步驟的實施前或實施後,對該第一晶圓的另一面貼附具有擴展性之擴展膠帶;
外周環狀部脫離步驟,在該貼合晶圓形成步驟、該斷開步驟以及該擴展膠帶貼附步驟的實施後,藉由擴張該擴展膠帶,而以該環狀的改質區域為起點將該第一晶圓分割成該外周環狀部與該中央區域,使該外周環狀部從該貼合晶圓脫離;及
磨削步驟,在該外周環狀部脫離步驟的實施後,對貼合晶圓的該第一晶圓從另一面側進行磨削來薄化至成品厚度。
較佳的是,該斷開步驟包含預備斷開步驟,前述預備斷開步驟是在該外周環狀部與該中央區域的斷開後,對該外周環狀部照射該雷射光束,而在放射方向上形成改質區域,將該外周環狀部斷開成複數個圓弧狀部。
較佳的是,該外周環狀部脫離步驟包含將該擴展膠帶一邊冷卻一邊擴張之冷卻擴展步驟。
較佳的是,該外周環狀部脫離步驟更包含加熱收縮步驟,前述加熱收縮步驟是在該冷卻擴展步驟的實施後,對該擴展膠帶被擴張而形成的該擴展膠帶的鬆弛部分進行加熱而使其收縮。
發明效果
本申請之發明可以將貼合晶圓的圍繞器件區域之外周剩餘區域的部分於脫離時的不良影響予以抑制。
用以實施發明之形態
以下,針對本發明的實施形態,一面參照圖式一面詳細地說明。本發明並非因以下的實施形態所記載之內容而受到限定之發明。又,在以下所記載之構成要素中,包含所屬技術領域中具有通常知識者可以容易地設想得到的構成要素、實質上相同的構成要素。此外,以下所記載之構成是可適當組合的。又,只要在不脫離本發明之要旨的範圍內,可進行構成的各種省略、置換或變更。
依據圖式來說明本發明的實施形態之晶圓10(參照圖2等)的加工方法。實施形態之晶圓10的加工方法是將一對晶圓10的一面側相互貼合,並將其中一個晶圓10(第一晶圓10-1)薄化至預定的成品厚度之方法。
又,在以後的說明中,在區別一對晶圓10之晶圓10彼此時,是將其中一個晶圓10標記為第一晶圓10-1,並將另一個晶圓10標記為第二晶圓10-2,在不區別時則簡記為晶圓10。未進行薄化之另一個的第二晶圓10-2雖然設為在實施形態中為和第一晶圓10-1同樣的TSV晶圓之晶圓來說明,但是在本發明中,亦可為沒有型樣之單純的基板晶圓(substrate wafer)。
圖1是顯示實施形態之晶圓10的加工方法之流程的流程圖。如圖1所示,實施形態之晶圓10的加工方法具備貼合晶圓形成步驟1、斷開步驟2、擴展膠帶貼附步驟3、外周環狀部脫離步驟4與磨削步驟5。
(貼合晶圓形成步驟1)
圖2是顯示圖1所示之貼合晶圓形成步驟1之一狀態的立體圖。圖3是顯示圖1所示之貼合晶圓形成步驟1的圖2之後的一狀態的立體圖。貼合晶圓形成步驟1是將第一晶圓10-1的一面貼合於第二晶圓10-2的一面而形成貼合晶圓之步驟。
首先,針對加工對象之晶圓10(第一晶圓10-1以及第二晶圓10-2)之構成來說明。晶圓10是將矽(Si)、藍寶石(Al
2O
3)、砷化鎵(GaAs)或碳化矽(SiC)等作為基板11之圓板狀的半導體晶圓、光器件晶圓等之晶圓。晶圓10的外周緣12已被倒角。在實施形態中,晶圓10的外周緣12是形成為從基板11的正面13至背面14之截面圓弧狀,以使得厚度方向的中央最朝外周側突出。在實施形態中,晶圓10是直徑為300mm,且厚度為700μm。
晶圓10在基板11的正面13側具備器件區域15、與圍繞器件區域15之外周剩餘區域16。器件區域15具有在基板11的正面13設定成格子狀之複數條分割預定線17、與形成於被分割預定線17所區劃出的各區域之器件18。外周剩餘區域16是涵蓋全周地圍繞器件區域15且未形成有器件18之區域。
在實施形態中,器件18構成3DNAND快閃記憶體,且具備電極墊、與連接於電極墊之貫通電極。貫通電極在薄化基板11且從晶圓10一個個地分割器件18時,是貫通到基板11的背面14側。亦即,實施形態之晶圓10是可被分割成一個個的器件18具有貫通電極之所謂TSV晶圓。再者,本發明之晶圓10不限定於如實施形態之具有貫通電極之TSV晶圓,亦可為沒有貫通電極之器件晶圓。
在貼合晶圓形成步驟1中,是將第一晶圓10-1的具備器件區域15以及外周剩餘區域16之一面貼合於第二晶圓10-2的一面。亦即,在實施形態的貼合晶圓形成步驟1中,是將第一晶圓10-1的正面13貼合於第二晶圓10-2的正面13。
在貼合晶圓形成步驟1中,是在第一晶圓10-1的正面13與第二晶圓10-2的正面13當中的其中一個面積層接著層20。在實施形態中,是在第二晶圓10-2的正面13積層接著層20。又,接著層20在實施形態中是在基材層的正面、背面積層有黏著材層之雙面膠帶,但在本發明中並不限定為雙面膠帶,亦可為例如氧化膜,亦可為藉由塗佈包含樹脂等的接著劑而形成之構成。
在貼合晶圓形成步驟1中,首先是如圖2所示,使第一晶圓10-1的正面13與第二晶圓10-2的正面13隔著間隔而相向。接著,如圖3所示,透過接著層20將第一晶圓10-1的正面13與第二晶圓10-2的正面13貼合。藉此,形成貼合晶圓。
(斷開步驟2)
圖4是示意地顯示圖1所示之斷開步驟2之一狀態的剖面圖。圖5是示意地顯示圖1所示之斷開步驟2後之晶圓10的平面圖。斷開步驟2是將第一晶圓10-1斷開成對應於器件區域15之中央區域22與對應於外周剩餘區域16之外周環狀部23之步驟。
在斷開步驟2中,是對距離第一晶圓10-1的外周緣12預定距離內側的位置照射雷射光束30,來形成作為分離起點之改質區域21。第一晶圓10-1的距離外周緣12預定距離內側的位置,是表示將第一晶圓10-1的中央區域22與外周環狀部23斷開之位置,亦即器件區域15的外周緣。雷射光束30是對第一晶圓10-1具有穿透性之波長的雷射光束,可為例如紅外線(Infrared rays,IR)。
改質區域21意指密度、折射率、機械強度或其他物理特性已變得與周圍的該特性不同的狀態之區域。改質區域21可為例如熔融處理區域、裂隙(crack)區域、絕緣破壞區域、折射率變化區域、及混合了這些區域之區域等。改質區域21的機械性強度等會比第一晶圓10-1的其他部分更低。
在斷開步驟2中,藉由以雷射加工裝置35所進行之隱形切割,而在第一晶圓10-1形成改質區域21。雷射加工裝置35包含:工作夾台36;雷射光束照射單元37,朝向已保持在工作夾台36的保持面之晶圓10照射雷射光束30;及移動單元,使工作夾台36與雷射光束照射單元37相對地移動。
在斷開步驟2中,首先在將第二晶圓10-2的背面14側吸引保持在工作夾台36的保持面後,藉由移動單元使工作夾台36移動至加工位置。其次,讓雷射光束照射單元37從第一晶圓10-1的背面14側朝向器件區域15的外周緣並呈在鉛直方向上相向後,將雷射光束30的聚光點31設定在第一晶圓10-1的內部。
在斷開步驟2中,其次是一邊使工作夾台36繞著和鉛直方向平行的軸心旋轉一邊從雷射光束照射單元37朝第一晶圓10-1照射雷射光束30。亦即,將雷射光束30沿著第一晶圓10-1的器件區域15的外周緣照射,而形成沿著外周緣之呈環狀地連續的改質區域21。
此時,在斷開步驟2中,是藉由變更雷射光束30的聚光點31的高度來照射複數次雷射光束30、或是照射具有在第一晶圓10-1的厚度方向上分開之複數個聚光點之雷射光束,而在第一晶圓10-1的厚度方向上形成複數個改質區域21。裂隙會從改質區域21擴展,並藉由改質區域21與裂隙之連結,來將第一晶圓10-1斷開成對應於器件區域15之中央區域22、與對應於外周剩餘區域16之外周環狀部23。
再者,在實施形態中,斷開步驟2中的由雷射加工裝置35所進行之加工條件是設定成:雷射光束30的波長為IR,頻率為90kHz,厚度方向的道次數是6個道次,且平均輸出為6W。
(預備斷開步驟)
在實施形態的斷開步驟2中,會進一步實施以下所示之預備斷開步驟。圖6是示意地顯示圖1所示之斷開步驟2中的預備斷開步驟之一狀態的剖面圖。圖7是示意地顯示預備斷開步驟後的晶圓10之平面圖。預備斷開步驟是在中央區域22與外周環狀部23的斷開後,將外周環狀部23斷開成複數個圓弧狀部25之步驟。
在預備斷開步驟中,是在第一晶圓10-1的外周環狀部23中的圓周方向的預定位置上,在外周環狀部23的內周緣與外周緣之間照射雷射光束30,而在放射方向上形成作為分離起點之改質區域24。
在預備斷開步驟中,首先讓雷射光束照射單元37從第一晶圓10-1的背面14側朝向器件區域15的外周緣的預定的位置並呈在鉛直方向上相向後,將雷射光束30的聚光點31設定在第一晶圓10-1的內部。
在預備斷開步驟中,其次藉由移動單元來一邊使工作夾台36與雷射光束照射單元37相對地移動,一邊從雷射光束照射單元37將雷射光束30朝第一晶圓10-1照射。此時,以使雷射光束30的聚光點31朝向第一晶圓10-1的徑方向外側移動的方式來讓工作夾台36移動。亦即,藉由在對應於外周剩餘區域16之外周環狀部23朝放射方向照射雷射光束30,而形成在放射方向上連續的改質區域24。
此時,在預備斷開步驟中,是藉由變更雷射光束30的聚光點31的高度來照射複數次雷射光束30、或是照射具有在第一晶圓10-1的厚度方向上分開之複數個聚光點之雷射光束,而在第一晶圓10-1的厚度方向上形成複數個改質區域24。裂隙會從改質區域24擴展,並藉由改質區域24與裂隙之連結,來將第一晶圓10-1的對應於外周剩餘區域16之外周環狀部23斷開成複數個圓弧狀部25。
再者,在圖7所示之實施形態的預備斷開步驟中,雖然是將外周環狀部23分割成8個圓弧狀部25,但在本發明中亦可進一步分割為成倍的16個,且亦可因應於第一晶圓10-1的直徑或外周環狀部23的寬度的尺寸來適當設定分割數。又,在實施形態中,雖然是以聚光點31從第一晶圓10-1的徑方向內側往徑方向外側移動的方式來一邊使工作夾台36移動一邊照射雷射光束30,但在本發明中,亦可用聚光點31從第一晶圓10-1的徑方向外側往徑方向內側移動的方式來一邊使工作夾台36移動一邊照射雷射光束30。這種情況下,在聚光點31到達環狀的改質區域21的時間點會使雷射光束30的照射停止。在實施形態中,預備斷開步驟中的由雷射加工裝置35所進行之加工條件會設定成和改質區域21的形成時相同條件。
(擴展膠帶貼附步驟3)
圖8是示意地顯示圖1所示之擴展膠帶貼附步驟3之一狀態的剖面圖。擴展膠帶貼附步驟3是以下之步驟:對第一晶圓10-1的和貼附第二晶圓10-2之一面為相反側的另一面貼附具有擴展性之擴展膠帶40。
也就是說,在實施形態的擴展膠帶貼附步驟3中,是對第一晶圓10-1的背面14來貼附擴展膠帶40。擴展膠帶貼附步驟3可在斷開步驟2的實施前或實施後實施。擴展膠帶貼附步驟3在斷開步驟2的實施前實施的情況下,在斷開步驟2中,會將雷射光束30以隔著擴展膠帶40的方式照射到第一晶圓10-1。
擴展膠帶40具有例如藉由合成樹脂所構成之基材層、與積層於基材層之黏著層。在擴展膠帶貼附步驟3中,是例如藉由貼片機(mounter)45將擴展膠帶40貼附到第一晶圓10-1的背面14。貼片機45包含保持台46、與在平行於保持台46的保持面的方向上滾動之輥47。
在擴展膠帶貼附步驟3中,首先是將內徑比第二晶圓10-2的外徑更大之環狀的框架41的一面、與第二晶圓10-2的背面14側保持在保持台46的保持面。此時,貼片機45是使第二晶圓10-2在框架41的開口的內側保持在和框架41成為同軸之位置。
在擴展膠帶貼附步驟3中,其次是將擴展膠帶40貼附到框架41以及第一晶圓10-1的背面14側,並且以沿著第一晶圓10-1的背面14移動之輥47來按壓擴展膠帶40而使其密合並貼附到框架41以及第一晶圓10-1的背面14側。
(外周環狀部脫離步驟4)
圖9是示意地顯示圖1所示之外周環狀部脫離步驟4之一狀態的剖面圖。外周環狀部脫離步驟4是以環狀的改質區域21為起點,將第一晶圓10-1分割成外周環狀部23與中央區域22,使外周環狀部23從貼合晶圓脫離之步驟。
外周環狀部脫離步驟4可在貼合晶圓形成步驟1、斷開步驟2以及擴展膠帶貼附步驟3的實施後實施。在外周環狀部脫離步驟4中,是擴張裝置50對擴展膠帶40朝放射方向賦與外力,而在面方向上擴張擴展膠帶40,藉此將第一晶圓10-1分割成外周環狀部23與中央區域22。擴張裝置50包含工作夾台51、夾持構件52、升降單元53、頂推構件54、滾輪構件55與加熱單元56。又,擴張裝置50設置在可密封且可將內部冷卻之腔室57內。
在外周環狀部脫離步驟4中,首先隔著擴展膠帶40將第一晶圓10-1的背面14側載置於工作夾台51的保持面,並以夾持構件52固定框架41的外周部。此時,滾輪構件55會抵接於框架41的內周緣與第一晶圓10-1的外周緣12之間的擴展膠帶40。在外周環狀部脫離步驟4中,依序實施冷卻擴展步驟與加熱收縮步驟。
<冷卻擴展步驟>
圖10是示意地顯示圖1所示之外周環狀部脫離步驟4中的冷卻擴展步驟之一狀態的剖面圖。冷卻擴展步驟是將擴展膠帶40一邊冷卻一邊擴張之步驟。
在冷卻擴展步驟中,是冷卻擴展膠帶40來使其硬化。在實施形態的冷卻擴展步驟中,容置擴張裝置50之腔室57內整體是始終被冷卻。擴展膠帶40被搬入到可和保持在框架41之貼合晶圓(第一晶圓10-1、第二晶圓10-2)一起被冷卻之腔室57內,並在開始擴張之前充分地被冷卻。腔室57內的冷卻溫度為例如0℃左右。再者,在本發明之冷卻擴展步驟中,亦可藉由冷卻工作夾台51來冷卻擴展膠帶40。
在冷卻擴展步驟中,是一邊在已被冷卻之腔室57內冷卻擴展膠帶40,一邊藉由升降單元53使工作夾台51以及頂推構件54一體地上升。擴展膠帶40因為外周部已隔著框架41被夾持構件52所固定,所以框架41的內周緣與第一晶圓10-1的中央區域22的外周緣之間的部分會在面方向上擴張。此時,由於設置於頂推構件54的上端之滾輪構件55會緩和和擴展膠帶40之摩擦,因此擴展膠帶40整體會在面方向上擴張。
在冷卻擴展步驟中,擴展膠帶40之擴張的結果,拉伸力會放射狀地作用於擴展膠帶40。如圖10所示,當放射狀的拉伸力作用於擴展膠帶40時,會以形成於第一晶圓10-1的中央區域22與外周環狀部23之間的改質區域21以及呈放射狀地形成於外周環狀部23之改質區域24作為分離起點,而從中央區域22分割出外周環狀部23的每一個圓弧狀部25。此時,因為擴展膠帶40已藉由冷卻而硬化,所以在中央區域22與外周環狀部23的每一個圓弧狀部25之分割上所需要之外力,可有效率地被傳達。
(加熱收縮步驟)
圖11是示意地顯示圖1所示之外周環狀部脫離步驟4中的加熱收縮步驟之一狀態的剖面圖。加熱收縮步驟可在冷卻擴展步驟的實施後實施。加熱收縮步驟是對擴展膠帶40被擴張而形成的擴展膠帶40的鬆弛部分加熱來使其收縮之步驟。
在冷卻擴展步驟之後,在擴展膠帶40已在面方向上擴張之狀態下,框架41的內周緣與第一晶圓10-1的中央區域22的外周緣之間的部分之擴展膠帶40的剖面為從框架41的下表面朝向滾輪構件55的上表面形成為直線狀。在加熱收縮步驟中,首先是在此狀態下,以工作夾台51隔著擴展膠帶40吸引第一晶圓10-1的背面14側。藉此,維持中央區域22與外周環狀部23的每一個圓弧狀部25之間的寬度已被擴張之狀態。
在加熱收縮步驟中,其次是使工作夾台51以及頂推構件54一體地下降。此時,擴展膠帶40是外周部隔著框架41被夾持構件52固定,且中心部受到工作夾台51吸引。因此,藉由讓框架41的內周緣與第一晶圓10-1的中央區域22的外周緣之間接近,作用於擴展膠帶40之放射狀的拉伸力會降低,且在框架41的內周緣與第一晶圓10-1的中央區域22的外周緣之間的部分的擴展膠帶40會產生鬆弛。
於是,在實施形態的加熱收縮步驟中,會隨著使工作夾台51以及頂推構件54一體地下降,藉由加熱單元56來加熱擴展膠帶40的鬆弛部分而使其收縮。藉由加熱單元56所形成之加熱溫度為例如600℃左右。
加熱單元56的熱源部是例如一邊沿著框架41的內周緣與第一晶圓10-1的外周緣12之間的部分的圓周方向移動一邊對擴展膠帶40加熱。藉此,擴展膠帶40的框架41的內周緣與第一晶圓10-1的外周緣12之間的部分即可收縮。再者,在實施形態中,雖然是設成將加熱單元56設置於腔室57內之構成來說明,但亦可在冷卻擴展步驟之後,搬送至具有加熱單元之不同的加工單元來實施加熱收縮步驟。
在實施冷卻擴展步驟以及加熱收縮步驟之後,利用紫外線照射裝置將貼合晶圓從擴展膠帶40剝離時,宜使用限制照射區域之治具等,以不對外周環狀部23照射紫外線(ultra-violet,UV)。藉此,僅第一晶圓10-1的對應於中央區域22之背面14會從擴展膠帶40剝離,且外周環狀部23會被留在擴展膠帶40。
(磨削步驟5)
圖12是示意地顯示圖1所示之磨削步驟5之一狀態的剖面圖。磨削步驟5是將第一晶圓10-1從另一面磨削並薄化至預定的成品厚度之步驟。磨削步驟5是在外周環狀部脫離步驟4的實施後實施。在實施形態的磨削步驟5中,是從第一晶圓10-1的背面14進行磨削。
在磨削步驟5中,是藉由磨削裝置60對已保持在工作夾台61的保持面之第一晶圓10-1的背面14進行磨削。磨削裝置60具備工作夾台61、旋轉軸構件即主軸62、安裝在主軸62的下端之磨削輪63、與裝設在磨削輪63的下表面之磨削磨石64。磨削輪63以和工作夾台61的軸心平行的旋轉軸來旋轉。
在磨削步驟5中,首先是將第二晶圓10-2的背面14側吸引保持在工作夾台61的保持面。其次,在已使工作夾台61繞著軸心旋轉的狀態下,使磨削輪63繞著軸心來旋轉。藉由將磨削水供給至加工點,並且以預定的進給速度使磨削輪63的磨削磨石64接近於工作夾台61,而以磨削磨石64磨削第一晶圓10-1的背面14,並薄化至預定的成品厚度。
如以上所說明的,各實施形態之晶圓10的加工方法是在形成貼合晶圓之後,且在由磨削所進行之薄化之前,以雷射光束30沿著器件區域15的外周緣來形成作為分離起點之改質區域21、24,並藉由對已貼附於形成有改質區域21、24之晶圓10(第一晶圓10-1)之擴展膠帶40進行擴張,而去除對應於外周剩餘區域16之外周環狀部23。
從而,因為不會有在磨削時外周環狀部23脫離之情形,所以變得不會有已脫離之外周環狀部23損傷磨削磨石64而對加工結果造成不良影響之疑慮。又,因為不會有在磨削中外周剩餘區域16部分脫離而堆積在加工室內之情形,所以變得可大幅減低清掃頻率。因為外周環狀部23的每一個圓弧狀部25是在已附著於擴展膠帶40之狀態下從中央區域22脫離,所以不會有非所預期地脫離之情形,而可以抑制外周環狀部23在脫離時之不良影響。
再者,本發明並非限定於上述實施形態之發明。亦即,在不脫離本發明之要點的範圍內,可以進行各種變形來實施。例如,在冷卻擴展步驟中,雖然在實施形態中使工作夾台51上升來讓擴展膠帶40擴張,但也可以使夾持構件52下降,簡而言之,只要使工作夾台51對夾持構件52相對地上升,且使夾持構件52對工作夾台51相對地下降即可。又,亦可在使頂推構件54抵接於擴展膠帶40的上表面側之狀態下,藉由使工作夾台51對夾持構件52相對地下降,並使夾持構件52對工作夾台51相對地上升來讓擴展膠帶40擴張。
1:貼合晶圓形成步驟
2:斷開步驟
3:擴展膠帶貼附步驟
4:外周環狀部脫離步驟
5:磨削步驟
10:晶圓
10-1:第一晶圓
10-2:第二晶圓
11:基板
12:外周緣
13:正面
14:背面
15:器件區域
16:外周剩餘區域
17:分割預定線
18:器件
20:接著層
21,24:改質區域
22:中央區域
23:外周環狀部
25:圓弧狀部
30:雷射光束
31:聚光點
35:雷射加工裝置
36,51,61:工作夾台
37:雷射光束照射單元
40:擴展膠帶
41:框架
45:貼片機
46:保持台
47:輥
50:擴張裝置
52:夾持構件
53:升降單元
54:頂推構件
55:滾輪構件
56:加熱單元
57:腔室
60:磨削裝置
62:主軸
63:磨削輪
64:磨削磨石
圖1是顯示實施形態之晶圓的加工方法之流程的流程圖。
圖2是顯示圖1所示之貼合晶圓形成步驟之一狀態的立體圖。
圖3是顯示圖1所示之貼合晶圓形成步驟的圖2之後的一狀態的立體圖。
圖4是示意地顯示圖1所示之斷開步驟之一狀態的剖面圖。
圖5是示意地顯示圖1所示之斷開步驟後之晶圓的平面圖。
圖6是示意地顯示圖1所示之斷開步驟中的預備斷開步驟之一狀態的剖面圖。
圖7是示意地顯示預備斷開步驟後之晶圓的平面圖。
圖8是示意地顯示圖1所示之擴展膠帶貼附步驟之一狀態的剖面圖。
圖9是示意地顯示圖1所示之外周環狀部脫離步驟之一狀態的剖面圖。
圖10是示意地顯示圖1所示之外周環狀部脫離步驟中的冷卻擴展步驟之一狀態的剖面圖。
圖11是示意地顯示圖1所示之外周環狀部脫離步驟中的加熱收縮步驟之一狀態的剖面圖。
圖12是示意地顯示圖1所示之磨削步驟之一狀態的剖面圖。
1:貼合晶圓形成步驟
2:斷開步驟
3:擴展膠帶貼附步驟
4:外周環狀部脫離步驟
5:磨削步驟
Claims (4)
- 一種晶圓的加工方法,具備有以下步驟: 貼合晶圓形成步驟,將第一晶圓的一面貼合於第二晶圓的一面而形成貼合晶圓,前述第一晶圓於該一面具備形成有器件之器件區域、與包圍該器件區域之外周剩餘區域,且外周緣已被倒角; 斷開步驟,將對該第一晶圓具有穿透性之波長的雷射光束,沿著距離該第一晶圓的外周緣預定距離內側的位置來照射,而形成環狀的改質區域,將該第一晶圓斷開成對應於該外周剩餘區域之外周環狀部、與對應於該器件區域之中央區域; 擴展膠帶貼附步驟,在該斷開步驟的實施前或實施後,對該第一晶圓的另一面貼附具有擴展性之擴展膠帶; 外周環狀部脫離步驟,在該貼合晶圓形成步驟、該斷開步驟以及該擴展膠帶貼附步驟的實施後,藉由擴張該擴展膠帶,而以該環狀的改質區域為起點將該第一晶圓分割成該外周環狀部與該中央區域,使該外周環狀部從該貼合晶圓脫離;及 磨削步驟,在該外周環狀部脫離步驟的實施後,對貼合晶圓的該第一晶圓從另一面側進行磨削來薄化至成品厚度。
- 如請求項1之晶圓的加工方法,其中該斷開步驟包含預備斷開步驟,前述預備斷開步驟是在該外周環狀部與該中央區域的斷開後,對該外周環狀部照射該雷射光束,而在放射方向上形成改質區域,將該外周環狀部斷開成複數個圓弧狀部。
- 如請求項1或2之晶圓的加工方法,其中該外周環狀部脫離步驟包含將該擴展膠帶一邊冷卻一邊擴張之冷卻擴展步驟。
- 如請求項3之晶圓的加工方法,其中該外周環狀部脫離步驟更包含加熱收縮步驟,前述加熱收縮步驟是在該冷卻擴展步驟的實施後,對該擴展膠帶被擴張而形成的該擴展膠帶的鬆弛部分進行加熱來使其收縮。
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