TW202245023A - 基板之加工方法 - Google Patents
基板之加工方法 Download PDFInfo
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- TW202245023A TW202245023A TW111115407A TW111115407A TW202245023A TW 202245023 A TW202245023 A TW 202245023A TW 111115407 A TW111115407 A TW 111115407A TW 111115407 A TW111115407 A TW 111115407A TW 202245023 A TW202245023 A TW 202245023A
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Abstract
[課題]在將於分割預定線形成有金屬之基板沿著分割預定線來加工的情況下,從基板的加工溝周邊適當地去除毛邊,並且使毛邊去除的作業效率提升。
[解決手段]一種將於分割預定線形成有金屬之基板沿著分割預定線來加工之方法,包含以下步驟:加工溝形成步驟,沿著分割預定線在基板形成加工溝;及毛邊去除步驟,在實施加工溝形成步驟後,讓至少包含氧化劑且已被賦與超音波振動之蝕刻液接觸到基板,而將產生在已形成之加工溝的周邊之金屬的毛邊,藉由包含於蝕刻液之氧化劑來改質並抑制延性而使其脆弱化,並且藉由超音波振動來去除。
Description
本發明是有關於一種將於分割預定線形成有金屬之基板沿著分割預定線來加工之基板之加工方法。
要在包含金屬零件、金屬膜、或以金屬構成之配線等之基板形成加工溝時,會產生以下問題:在金屬部分產生毛邊,且因為所產生之毛邊而造成晶片的端子之間短路、或毛邊在被加工物的操作處理中掉落至接合墊上等而產生接合不良等。因此,已有一種從噴嘴對毛邊噴射高壓水來進行毛邊去除之裝置的方案被提出(參照例如專利文獻1)。
先前技術文獻
專利文獻
專利文獻1:日本特開2007-125667號公報
發明欲解決之課題
但是,即使是使用已揭示於專利文獻1之技術,要適當地去除加工溝周邊的毛邊仍是困難的,且在加工溝的形成後,要先進行讓人檢查加工溝來去除毛邊之作業,因而效率低下。
據此,本發明之目的在於提供一種基板之加工方法,其可以在將於分割預定線形成有金屬之基板沿著分割預定線來加工的情況下,從已進行全切或半切之基板適當地去除毛邊,並且使毛邊去除的作業效率提升。
用以解決課題之手段
根據本發明,可提供一種基板之加工方法,將於分割預定線形成有金屬之基板沿著該分割預定線來加工,前述基板的加工方法具備以下步驟:
加工溝形成步驟,沿著該分割預定線在基板形成加工溝;以及
毛邊去除步驟,在實施該加工溝形成步驟後,讓至少包含氧化劑且已被賦與超音波振動之蝕刻液接觸到基板,而將產生在已形成之該加工溝的周邊之金屬的毛邊,藉由包含於該蝕刻液中之該氧化劑來改質並抑制延性而使其脆弱化,並且藉由該超音波振動來去除。
較佳的是,前述蝕刻液更包含有機酸。
較佳的是,前述蝕刻液更包含防蝕劑。
較佳的是,前述毛邊去除步驟是使形成有前述加工溝之基板、或已藉由該加工溝而被個片化之複數個晶片,在貯留有前述蝕刻液且具有可賦與前述超音波振動之超音波振盪部的水槽浸漬。
較佳的是,前述毛邊被蝕刻之速率是以包含前述氧化劑、與前述有機酸或前述防蝕劑之至少一者之前述蝕刻液的組成比來控制。
發明效果
根據本發明,變得可良好地去除毛邊,並且使毛邊去除的作業效率提升。
藉由將在毛邊去除步驟中所使用之蝕刻液設成除了包含氧化劑以外還包含有機酸之蝕刻液,變得可讓用於毛邊去除之蝕刻的效果增大。
藉由將在毛邊去除步驟中所使用之蝕刻液設成除了包含氧化劑以外還包含防蝕劑之蝕刻液,變得可讓對晶片的器件表面之不需要的蝕刻延遲。
毛邊去除步驟是藉由使形成有加工溝之基板、或已藉由加工溝而被個片化之複數個晶片,在貯留有蝕刻液且具有可賦與超音波振動之超音波振盪部的水槽浸漬,而變得可在短時間內良好地進行毛邊的去除。
用以實施發明之形態
可被施行分割加工之圖1所示之基板90可為例如QFN(方形扁平無引線封裝,Quad Flat Non-leaded package)基板。基板90具有外形為矩形狀之框架板900。在圖1所示之基板90的正面901上,是在基板90的長邊方向上排列而形成有複數個(在圖示的例子中為3個)器件區域902,前述器件區域902會藉由被分割而成為具備器件之一個個的晶片909。各器件區域902已被端材部分903包圍其周圍,前述端材部分903會被小片化並廢棄。
器件區域902是以相互正交之複數條分割預定線904來區劃,且在分割預定線904上配設有與未圖示之各器件相連之構成複數個電極墊等的金屬905。各金屬905彼此在框架板900上已藉由未圖示之塑模樹脂而被絕緣。並且,基板90藉由沿著分割預定線904在中央切斷複數個金屬905而被分割成晶片909,前述晶片909具備有密封有未圖示的器件之塑模樹脂、與複數個已被切斷之金屬905。再者,在器件區域902亦可形成有例如厚度μm單位之SiO
2等的氧化膜、或樹脂膜來作為器件保護膜。
例如,如圖2所示,已將基板90的背面907(參照圖2)貼附於切割膠帶91的貼附面(正面)。切割膠帶91的外周部已貼附於圖1、圖2所示之環狀框架92,藉此,基板90透過切割膠帶91而被環狀框架92所支撐,且成為使用了環狀框架92之可進行操作處理的框架單元9。並且,環狀框架92的中心與基板90的中心會成為大致一致之狀態。
再者,被施行加工之基板90亦可不成為框架單元9,而是成為基板單體之狀態。又,基板90亦可例如在分割預定線904上保持預定的間隔而形成有以鋁或銅等金屬所構成且組合電晶體(transistor)或電阻等而構成之TEG(測試元件群,Test Element Group)。並且,TEG是透過由金屬等所構成之未圖示的配線層來和被分割且具備器件之晶片909導通。再者,已形成在基板90的分割預定線904上之金屬除了上述例子以外,亦可為配線,且基板90亦可為在QFN基板以外之金屬基板的正面積層有器件且被樹脂密封之封裝基板、或作為散熱板而在形成有分割預定線之基板的正面被覆有金屬膜之封裝基板。
(1-1)加工溝形成步驟之第1實施形態
圖2所示之切削裝置1是可以對基板90施行切削加工之裝置,且至少具備有保持基板90之保持單元15、與以可旋轉的切削刀片112來切削基板90之切削單元11。再者,在圖2中,是將框架單元9的構造作部分簡化來顯示。
保持單元15具備有例如保持基板90之平坦的保持面150,且以鉛直方向(Z軸方向)的旋轉軸為軸而可旋轉,並且藉由未圖示之切削進給機構而變得可在X軸方向(紙面前後方向)上往返移動。保持單元15亦可為:保持面150為以多孔素材所構成之多孔夾頭,亦可為:在保持面150具備退刀溝之治具夾頭。又,在如本實施形態地使基板90成為框架單元9的情況下,在圖2所示之保持單元15的周圍會在例如圓周方向上隔著等間隔而均等地配設有可以夾持固定環狀框架92之4個固定夾具153。
切削單元11形成為可進行往Y軸方向之分度進給、以及往Z軸方向(鉛直方向)之切入進給,且至少具備有例如一邊旋轉一邊切入基板90之切削刀片112、支撐已裝設於前端之切削刀片112之可旋轉的主軸113、與未圖示之馬達。切削刀片112亦可為環狀的墊圈型刀片,亦可為輪轂型刀片。
例如,在切削單元11之附近配設有檢測已保持在保持單元15之基板90的分割預定線904(參照圖1)之未圖示的校準機構。校準機構可以依據基板90的正面901之拍攝圖像,並藉由型樣匹配等的圖像處理來檢測正面901的分割預定線904的位置。
在進行刀片切割之加工溝形成步驟中,首先是將已成為框架單元9之基板90載置在保持單元15的保持面150,並且將藉由未圖示之吸引源所產生之吸引力傳達到保持面150,而在保持面150上吸引保持基板90。基板90的中心與保持面150的中心是大致一致。又,框架單元9的環狀框架92可被固定夾具153夾持固定。
例如,旋轉保持基板90之保持單元15,以讓基板90的長邊方向成為X軸方向,接著,將保持基板90之保持單元15朝-X方向(紙面後側)進給,並且藉由未圖示之校準機構檢測使切削刀片112切入之在X軸方向上延伸之目標的分割預定線904的Y軸方向上的座標位置。
接著,進行目標的分割預定線904與切削刀片112的Y軸方向上的對位,並且切削刀片112從例如+Y方向側來觀看為朝逆時針方向高速旋轉。此外,將切削單元11朝向-Z方向切入進給,且將切削刀片112的最下端定位於將基板90全切而稍微切入切割膠帶91之高度位置。再者,亦可設成將基板90半切。
藉由將圖2所示之基板90以預定的切削進給速度進一步朝-X方向(紙面後側)送出,切削刀片112會沿著分割預定線904切入基板90,而一面形成圖2所示之加工溝95一面將基板90切斷。因為在圖1所示之分割預定線904上配設有電極墊等的金屬905,所以該金屬905會因為其延性而成為圖2所示之例如鬍鬚狀的毛邊96,且形成在加工溝95的周邊,亦即加工溝95的內側面或加工溝95的上端部分。
當將框架單元9進給至圖2所示之切削刀片112將一條分割預定線904切削結束之-X方向側的預定的位置時,會暫時停止基板90的切削進給,並使切削刀片112從基板90分開,接著使基板90朝+X方向移動而返回到原點位置。然後,藉由將切削刀片112朝-Y方向按相鄰的分割預定線904的間隔分度進給並且依序進行同樣的切削,而將基板90沿著X軸方向之全部的分割預定線904來切斷。
此外,可藉由將保持單元15旋轉90度來進行同樣的切削,而將全部的分割預定線904縱橫地全部切斷並將基板90分割成具備器件之晶片909。
(1-2)加工溝形成步驟之第2實施形態
亦可取代藉由上述切削所進行之對基板90的加工溝95的形成,而使用例如圖3所示之雷射加工裝置2來實施加工溝形成步驟。雷射加工裝置2至少具備有吸引保持基板90之工作夾台20、與可照射對已保持在工作夾台20之基板90例如具有吸收性之波長的雷射光束之雷射光束照射單元22。
連通於未圖示之吸引源且具備平坦的保持面200之工作夾台20為可旋轉,並且藉由未圖示之移動機構而形成為可在加工進給方向即X軸方向以及分度進給方向即Y軸方向上往返移動。
雷射光束照射單元22是藉由將從雷射振盪器229射出之雷射光束透過傳送光學系統入射至聚光器221的內部之未圖示的聚光透鏡,而可以將雷射光束正確地聚光並照射在以工作夾台20所保持之基板90的目標之處。雷射光束的聚光點的高度位置形成為可藉由未圖示之聚光點位置調整機構而在Z軸方向上調整。
在雷射加工裝置2中,基板90是以正面901朝向上側之狀態在工作夾台20的保持面200上被吸引保持。又,環狀框架92被配設在工作夾台20之固定夾具204所夾持固定。接著,藉由未圖示之校準機構來檢測成為用於照射雷射光束之基準的分割預定線904的位置。然後,將工作夾台20在Y軸方向上分度進給,且進行照射雷射光束之分割預定線904與聚光器221之Y軸方向上的對位。
此外,將藉由未圖示之聚光透鏡所聚光之雷射光束的聚光點的高度位置對準於例如基板90的正面901的高度位置。然後,雷射振盪器229將對基板90具有吸收性之波長的雷射光束射出,且將雷射光束聚光於分割預定線904來照射。
又,將基板90以預定的加工進給速度朝往方向即-X方向(紙面後側)進給,而將雷射光束沿著分割預定線904朝基板90的正面901持續照射,而將基板90從正面901朝向背面907燒蝕,並形成沿著分割預定線904例如切斷基板90之加工溝97。再者,加工溝97亦可為半切溝。與此同時,因為在圖1所示之分割預定線904上配設有電極墊等金屬905,所以會作為該金屬905熔融後之毛邊98而形成於加工溝97的周邊,亦即加工溝97的內側面或加工溝97的上端部分。
當基板90朝-X方向行進到結束沿著分割預定線904照射雷射光束之預定的位置時,雷射光束的照射即停止。此外,可將工作夾台20朝+Y方向分度進給預定的距離,而將聚光器221的聚光點正下方定位在下一個目標之分割預定線904上。然後,將基板90朝向返方向即+X方向(紙面近前側)加工進給,並和在往方向上的雷射光束照射同樣地沿著分割預定線904對基板90進行燒蝕,而沿著分割預定線904形成加工溝97。然後,藉由將工作夾台20朝+Y方向按相鄰的分割預定線904的間隔分度進給並且依序進行同樣的雷射加工,而將基板90沿著在X軸方向上延伸之全部的分割預定線904來切斷。再者,對1條分割預定線904之雷射照射亦可進行2道次(pass)以上。
此外,可藉由將工作夾台20旋轉90度來進行同樣的雷射加工,而將全部的分割預定線904縱橫地全部切斷並將基板90分割成具備器件之晶片909。
(2)毛邊去除步驟
在第1實施形態之加工溝形成步驟、或第2實施形態之加工溝形成步驟的實施後,將框架單元9搬送至圖4所示之水槽5。例如可以供已被環狀框架92所支撐之基板90整體浸漬之水槽5是由側壁51、與一體地連接於側壁51的下部之底板50所構成,且積存有蝕刻液500。
在底板50上配設有載置工作台52。載置工作台52具有平行於X軸Y軸平面之載置面521。框架單元9是載置於載置面521。對於水槽5,會由未圖示之蝕刻液供給源來供給蝕刻液500。水槽5在例如側壁51具有用於將蝕刻液500排出之排液口511。排液口511是在比載置工作台52的載置面521更高之位置,且配置在比載置於載置面521之框架單元9的上側之面更高之位置。藉此,已載置於載置面521之框架單元9整體會浸漬於已貯留於水槽5之蝕刻液500。對於水槽5,會由未圖示之蝕刻液供給源來供給新的蝕刻液500,並將舊的蝕刻液500從排液口511逐步排出。
在載置面521的下側(-Z方向側)之面配設有例如將複數個壓電元件排列而形成為圓板狀之超音波振盪部53。於超音波振盪部53連接有未圖示之端子,且連接有透過此端子及配線來施加交流電壓之電壓施加部55。再者,超音波振盪部53的形狀及配設處等,並不限定於本例。藉由超音波振盪部53所產生之超音波會讓載置面521振動,而從下側作用於已載置在載置面521之框架單元9。因為在水槽5內產生框架單元9直接接觸到超音波振盪部53之情形是不宜的,所以會成為讓載置面521進入其間之構成。
蝕刻液500至少含有氧化劑,且在本實施形態中會更包含有有機酸與防蝕劑。
作為有機酸,可以使用例如分子內具有至少1個羧基與至少1個胺基之化合物。此時,胺基中的至少1個宜為2級或3級之胺基。又,作為有機酸而使用之化合物亦可具有取代基。
可以作為有機酸而使用之胺基酸,可列舉:甘胺酸、二羥乙基甘胺酸、甘胺醯甘胺酸、羥乙基甘胺酸、N-甲基甘胺酸、β-丙胺酸、L-丙胺酸、L-2-胺基丁酸、L-正纈胺酸、L-纈胺酸、L-白胺酸、L-正白胺酸、L-別異白胺酸、L-異白胺酸、L-***酸、L-脯胺酸、肌胺酸、L-鳥胺酸、L-離胺酸、牛磺酸、L-絲胺酸、L-蘇胺酸、L-別蘇胺酸、L-高絲胺酸、L-甲狀腺素、L-酪胺酸、3,5-二碘-L-酪胺酸、β-(3,4-二羥基苯基)-L-丙胺酸、4-羥基-L-脯胺酸、L-半胱胺酸、L-甲硫胺酸、L-乙硫胺酸、L-羊毛硫胺酸、L-胱硫醚、L-胱胺酸、L-氧化半胱胺酸、L-麩胺酸、L-天冬胺酸、S-(羧甲基)-L-半胱胺酸、4-胺基丁酸、L-天冬醯胺酸、L-麩醯胺酸、氮絲胺酸、L-刀豆胺酸、L-瓜胺酸、L-精胺酸、δ-羥基-L-離胺酸、肌酸、L-犬尿胺酸、L-組胺酸、1-甲基-L-組胺酸、3-甲基-L-組胺酸、L-色胺酸、放線菌黴素C1、麥角硫鹼(ergothioneine)、蜂毒明肽(apamin)、第一型血管收縮素(angiotensin I)、第二型血管收縮素(angiotensin II)及抗痛素(antipain)等。其中,尤以甘胺酸、L-丙胺酸、L-脯胺酸、L-組胺酸、L-離胺酸、二羥乙基甘胺酸為較佳。
又,可以作為有機酸而使用的胺基多元酸(amino polyacid),可列舉:亞胺二乙酸、氮基三乙酸、二乙三胺五乙酸、乙二胺四乙酸、羥乙基亞胺二乙酸、氮基三亞甲基膦酸(nitrilotris(methylene)phosphonic acid)、乙二胺-N,N,N’,N’-四亞甲基磺酸、1,2-二胺丙烷四乙酸、二醇醚二胺四乙酸、反式環己烷二胺四乙酸、乙二胺鄰羥基苯基乙酸、乙二胺二琥珀酸(SS體)、β-丙胺酸二乙酸、N-(2-羧酸根合乙基)-L-天冬胺酸、N,N’-雙(2-羥基芐基)乙二胺N,N’-二乙酸等。
此外,可以作為有機酸而使用之羧酸,可列舉:甲酸、乙醇酸、丙酸、乙酸、丁酸、戊酸、己酸、草酸、丙二酸、戊二酸、己二酸、蘋果酸、琥珀酸、庚二酸、氫硫乙酸、乙醛酸、氯乙酸、丙酮酸、乙醯乙酸、戊二酸等之飽和羧酸,或丙烯酸、甲基丙烯酸、巴豆酸、反丁烯二酸、順丁烯二酸、中康酸、檸康酸、烏頭酸等之不飽和羧酸、安息香酸類、甲苯甲酸、鄰苯二甲酸類、萘甲酸類、焦蜜石酸、萘二甲酸等之環狀不飽和羧酸等。
作為氧化劑,可以使用例如:過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、臭氧水及銀(II)鹽、鐵(III)鹽、或其有機錯鹽等。
又,作為防蝕劑,較佳的是使用例如:分子內具有3個以上的氮原子,且具有稠環構造之芳香雜環化合物、或分子內具有4個以上的氮原子之芳香雜環化合物。此外,芳環化合物宜包含羧基、磺酸基、羥基、烷氧基。具體而言,宜為四唑衍生物、1,2,3-***衍生物、以及1,2,4-***衍生物。
可以作為防蝕劑而使用之四唑衍生物,可列舉在形成四唑環之氮原子上不具有取代基,且在四唑的第5位置上導入以下之基的四唑衍生物:選自於由磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是已被選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代之烷基。
又,可以作為防蝕劑而使用之1,2,3-***衍生物,可列舉在形成1,2,3-***環之氮原子上不具有取代基,且在1,2,3-***的第4位置及/或第5位置上導入以下之基的***衍生物:選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
又,可以作為防蝕劑而使用之1,2,4-***衍生物,可列舉在形成1,2,4-***環之氮原子上不具有取代基,且在1,2,4-***的第2位置及/或第5位置上導入以下之基的***衍生物:選自於由磺酸基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
在本實施形態中的毛邊去除步驟中,是例如,如圖4所示,設成基板90朝向上側來使框架單元9浸漬於水槽5的蝕刻液500,且將框架單元9載置於載置工作台52的載置面521。並且,從電壓施加部55對超音波振盪部53施加預定的電壓,且讓超音波振盪部53主要在上下方向上進行機械振動,藉此振盪產生預定的頻率的超音波。然後,所振盪產生之超音波會透過蝕刻液500傳播至已被分割成晶片909之基板90。
形成於基板90的加工溝95(或圖3所示之加工溝97)的周圍之由金屬所構成的毛邊96(或者圖3所示之毛邊98),會被包含於蝕刻液500之氧化劑改質(氧化)而降低金屬的延性。亦即,對超音波振動會變得脆弱。並且,在本實施形態中是藉由包含有機酸之蝕刻液500而以和進行脆弱化並行來進一步變細之方式來進行蝕刻。其結果,可藉由從蝕刻液500所傳播之超音波振動,來將毛邊96(毛邊98)從晶片909去除。
再者,在毛邊去除步驟中,毛邊96被蝕刻之速率是以例如包含氧化劑、有機酸與防蝕劑之蝕刻液500的組成比來控制。亦即,雖然有構成器件晶片909之製品部分的金屬零件或金屬配線也會被蝕刻液500蝕刻而被施加破壞之可能性,但是藉由控制包含氧化劑、有機酸與防蝕劑之蝕刻液500的組成比,又,控制使基板90浸漬於蝕刻液500之時間,可以防止器件晶片909的損傷,並且效率良好地從晶片909去除毛邊96(毛邊98)。這是因為以金屬所構成之毛邊96大部分形成為從晶片909朝向前端細長地突出,所以會比晶片909的製品部分更快地進行由包含於蝕刻液500之氧化劑所造成之延性的降低與脆弱化,此外,藉由被賦與超音波振動,變得可易於使較細的毛邊96(毛邊98)振動而折斷,而在破壞入侵到器件晶片909的製品部分之前的階段,即效率良好地完成毛邊96(毛邊98)的去除。又,例如,一般而言,因為在器件晶片909的正面大多事先形成有氧化膜等的器件保護膜,所以相較於毛邊96(毛邊98)部分,會變得難以受到蝕刻液500破壞。
例如,在將基板90接著固定在以玻璃或矽等所構成之高剛性的基板(載體基板),且實施上述第1實施形態的加工溝形成步驟、或第2實施形態的加工溝形成步驟的情況下,亦可在毛邊去除步驟中,在水槽5浸漬已按每個載體基板分割成晶片909之基板90。
又,在上述第1實施形態的加工溝形成步驟、或第2實施形態的加工溝形成步驟中,在不將基板90完全地切斷而形成有半切溝的情況下,亦可在水槽5浸漬未被分割之基板90單體。又,亦可將例如已將QFN基板90個片化而成之複數個晶片909解除膠帶支撐並直接在水槽5浸漬。
配設於水槽5之超音波振盪部53並不限定於圖4所示之圓板狀的構成。例如,作為將超音波振盪部朝Z軸方向伸縮之超音波喇叭,亦可用在水槽5的上方浸漬之方式來配設,且一邊使該超音波喇叭沿著已載置在載置工作台52之基板90的加工溝95(加工溝97)縱橫地移動,一邊使超音波振動傳播到蝕刻液500,且將產生在加工溝95(加工溝97)的周邊之金屬的毛邊96(毛邊98)藉由包含於蝕刻液500之氧化劑來改質並抑制延性而使其脆弱化,並且藉由超音波振動來去除。再者,已傳播至蝕刻液500之超音波振動會朝向-Z方向前進,並在到達水槽5的底板50後,在底板50反射而朝液面側返回。藉此,朝向底板50之超音波(入射波)與從底板50反射而朝液面側返回之超音波(反射波)會重疊,且在蝕刻液500中形成聲壓較強之深度與較弱之深度。並且,在蝕刻液500中聲壓最高之深度會因應於超音波的頻率而在Z軸方向上距離液面一定間隔處存在。從而,可測定在將液面設為位置0的情況下之在自液面起算的蝕刻液500中的Z軸方向上聲壓會變得最大之深度。並且,亦可將已載置於載置工作台52之基板90的高度位置對準蝕刻液500中的Z軸方向上之聲壓變得最高之深度,來進行上述超音波振動的賦與。
再者,亦可例如,將超音波振盪部53配設在底板50上表面,並將載置框架單元9的環狀框架92之框架載置台於圓周方向上隔著預定間隔而均等地配設在比已配設有該超音波振盪部53之底板50的上表面的區域更外側的區域。然後,使框架單元9朝讓超音波振盪部53與基板90的正面901相面對之方向來浸漬於水槽5的蝕刻液500中,並將環狀框架92載置於框架載置台的上表面。並且,從電壓施加部55對超音波振盪部53進行電壓的施加,而從超音波振盪部53對蝕刻液500賦與超音波振動。
在此情況下,變得可做到例如可以將金屬的毛邊96(毛邊98)藉由包含於蝕刻液500之氧化劑來改質並抑制延性而使其脆弱化且藉由超音波振動來去除,並且以超音波振動在蝕刻液500中產生之氣泡(空蝕氣泡(cavitation bubbles))會於基板90的加工溝95(加工溝97)上升並碰到毛邊96(毛邊98)而被破壞,並以被破壞時之衝擊波來良好地去除毛邊96(毛邊98)。
又,毛邊去除步驟中的蝕刻液對基板90之接觸,並不限定於將基板90在貯留有蝕刻液500之水槽5浸漬的形態。例如,亦可在將框架單元9載置於水槽5的載置工作台52之後,從配設於水槽5的上方之超音波振動噴嘴將蝕刻液500沿著基板90的加工溝95(加工溝97)縱橫地噴射。在此情況下,變得可例如減少蝕刻液500的使用量,又,可以將毛邊96(毛邊98)藉由包含於蝕刻液500之氧化劑來改質並抑制延性而使其脆弱化,並且也藉由在被賦與超音波振動時噴射出之蝕刻液500衝撞於毛邊96之時的衝擊來從晶片909去除毛邊96。
如上述,將在分割預定線904形成有金屬905之基板90沿著分割預定線904來加工之本發明的基板之加工方法具備:加工溝形成步驟,沿著分割預定線904在基板90形成例如由切割所造成之加工溝95;及毛邊去除步驟,在實施加工溝形成步驟後,接觸至少包含氧化劑且已被賦與超音波振動之蝕刻液500,而將產生在已形成之加工溝95的周邊之金屬905的毛邊96藉由包含於蝕刻液500之氧化劑來改質並抑制延性而使其脆弱化,並且藉由超音波振動來去除,藉此,因為可以良好地去除毛邊96,並且作業人員亦可不用將加工溝95一條一條地檢查毛邊96的有無,所以變得可使毛邊去除的作業效率提升。
又,藉由設成讓在毛邊去除步驟中所使用之蝕刻液500除了氧化劑以外還包含有機酸之構成,而變得可使對毛邊96之蝕刻的效果增大。
又,藉由設成讓在毛邊去除步驟中所使用之蝕刻液500除了氧化劑以外還進一步包含防蝕劑之構成,而變得可讓對成為晶片909的製品部分之器件表面之不需要的蝕刻延遲。
毛邊去除步驟是藉由使形成有加工溝95的基板90、或已藉由加工溝95而被個片化之複數個晶片909在貯留有蝕刻液500並具有可賦與超音波振動之超音波振盪部53的水槽5浸漬,而變得可在短時間內良好地進行毛邊96的去除。
本發明之基板之加工方法並不限定於上述實施形態,且當然可在其技術思想的範圍內以各種不同的形態來實施。又,關於在實施加工方法時所使用之各裝置的構成等,也可在可以發揮本發明的效果的範圍內合宜變更。
1:切削裝置
2:雷射加工裝置
5:水槽
9:框架單元
11:切削單元
15:保持單元
20:工作夾台
22:雷射光束照射單元
50:底板
51:側壁
52:載置工作台
53:超音波振盪部
55:電壓施加部
90:基板
91:切割膠帶
92:環狀框架
95,97:加工溝
96,98:毛邊
112:切削刀片
113:主軸
150,200:保持面
153:固定夾具
204:固定夾具
221:聚光器
229:雷射振盪器
500:蝕刻液
511:排液口
521:載置面
900:框架板
901:基板的正面
902:器件區域
903:端材部分
904:分割預定線
905:金屬
907:基板的背面
909:晶片
X,+X,-X,Y,+Y,-Y,Z,+Z,-Z:方向
圖1是顯示施行加工之基板之一例的平面圖。
圖2是說明藉由刀片切割而在基板形成沿著分割預定線之加工溝的加工溝形成步驟之一例的側面圖。
圖3是說明藉由雷射切割而在基板形成沿著分割預定線之加工溝的加工溝形成步驟之其他例的側面圖。
圖4是說明使用了貯留有蝕刻液之水槽的毛邊去除步驟之一例的剖面圖。
5:水槽
9:框架單元
50:底板
51:側壁
52:載置工作台
53:超音波振盪部
55:電壓施加部
90:基板
91:切割膠帶
92:環狀框架
95:加工溝
96:毛邊
500:蝕刻液
511:排液口
521:載置面
901:基板的正面
907:基板的背面
909:晶片
+X,-X,Y,+Z,-Z:方向
Claims (5)
- 一種基板之加工方法,將於分割預定線形成有金屬之基板沿著該分割預定線來加工,前述基板之加工方法具備以下步驟: 加工溝形成步驟,沿著該分割預定線在該基板形成加工溝;及 毛邊去除步驟,在實施該加工溝形成步驟後,讓至少包含氧化劑且已被賦與超音波振動之蝕刻液接觸到該基板,而將產生在已形成之該加工溝的周邊之金屬的毛邊,藉由包含於該蝕刻液之該氧化劑來改質並抑制延性而使其脆弱化,並且藉由該超音波振動來去除。
- 如請求項1之基板之加工方法,其中前述蝕刻液更包含有機酸。
- 如請求項1或2之基板之加工方法,其中前述蝕刻液更包含防蝕劑。
- 如請求項1至3中任一項之基板之加工方法,其中前述毛邊去除步驟是使形成有前述加工溝之該基板、或已藉由該加工溝而被個片化之複數個晶片,在貯留前述蝕刻液且具有可賦與前述超音波振動之超音波振盪部的水槽浸漬。
- 如請求項3或4之基板之加工方法,其中在前述毛邊去除步驟中,前述毛邊被蝕刻之速率是以包含前述氧化劑、與前述有機酸或前述防蝕劑之至少一者之前述蝕刻液之組成比來控制。
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