TW202238896A - 用於銲線接合應用之封裝結構中的中介層設計 - Google Patents
用於銲線接合應用之封裝結構中的中介層設計 Download PDFInfo
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- TW202238896A TW202238896A TW111123027A TW111123027A TW202238896A TW 202238896 A TW202238896 A TW 202238896A TW 111123027 A TW111123027 A TW 111123027A TW 111123027 A TW111123027 A TW 111123027A TW 202238896 A TW202238896 A TW 202238896A
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- Combinations Of Printed Boards (AREA)
Abstract
本發明描述形成微電子封裝結構之方法及藉此形成之結構。這些方法/結構可包含將第一晶粒附接在板上;將中介層附接在該第一晶粒之頂部表面上;以及將第二晶粒附接在該第一晶粒之該頂部表面上,其鄰近該中介層,其中,該第二晶粒係從該第一晶粒之中心區域偏移。第一銲線導電結構可被附接至該第二晶粒,其從該第二晶粒延伸至該中介層之頂部表面。第二銲線導電結構被附接至該中介層且從該中介層延伸至該板。
Description
本發明係關於用於銲線接合應用之封裝結構中的中介層設計。
微電子封裝結構可例如被使用於支撐各種晶粒/裝置,諸如計算裝置及/或記憶體裝置。可被使用於裝納晶粒的封裝結構可包含混合式封裝,其可包括安裝在較大的底部晶粒上之較小的頂部晶粒。
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在以下詳細說明中,參照附圖,附圖以繪示的方式來展示其中可實施方法及結構的特定實施例。這些實施例被足夠詳細地描述以使那些熟習本領域之技術者能夠實施這些實施例。應瞭解的是,各種實施例雖然不同,但並不一定是相互排斥的。例如,結合一個實施例而在本文中所描述之特定特徵、結構或特性係可在其他實施例中實施而不脫離實施例的精神及範圍。此外,應瞭解的是,在不脫離實施例的精神及範圍的情況下,可修改每個所揭示實施例中之個別元件的位置或佈置。
因此,以下的詳細說明不應被視為具有限制意義,且實施例之範圍僅由所附之申請專利範圍來界定,並且被適當地解釋,連同申請專利範圍所賦予權利之等效件的全部範圍。在圖式中,貫穿數個視圖,相同的元件符號可以指相同或相似的功能性。在本文中所用之術語「在其之上」、「至」、「在其之間」及「在其上」可以指一層相對於其他層的相對位置。一層在另一層「之上」或在另一層「上」或是「結合至」另一層可以係直接地與另一層接觸,或係可具有一或多個中間層。位於層「之間」的一層可直接地與該層接觸,或可具有一或多個中間層。彼此「鄰近」的層及/或結構可具有或不具有介於其等之間的中間結構/層。直接地位於其他層/結構上/直接地與其他層/結構接觸之層/結構係可在其等之間不具有任何中間層/結構。
在本文中之實施例的各種實施方案可在諸如封裝基板之基板上形成或執行。封裝基板可包括能夠在電子組件(諸如積體電路(IC)晶粒)與可將IC封裝耦合至其上之下一級組件(例如,電路板)之間提供電通信的任何適當的類型之基板。在另一實施例中,基板可包括能夠在IC晶粒與耦合有下部IC/晶粒封裝之上部IC封裝之間提供電通信的任何適當的類型之基板,且在進一步之實施例中,基板可包括能夠在上部IC封裝與可將IC封裝耦合至其上之下一級組件之間提供電通信的任何適當的類型之基板。
基板亦可為晶粒提供結構性支撐。舉例而言,在一實施例中,基板可包括多層基板,其包含環繞核心層(介電質或金屬核心)而堆疊之介電質材料及金屬之交替層。在另一實施例中,基板可包括無核心多層基板。其他類型的基板及基板材料亦可發現使用於所揭示之實施例(例如,陶瓷、藍寶石、玻璃等等)。此外,依照一實施例,基板可包括介電質材料及金屬之交替層,這些介電質材料及金屬交替層係堆疊於晶粒本身之上,此程序有時被稱之為「無凸塊堆疊程序」。在利用此種方法的情況下,可能需要或可能不需要導電互連件(因為在某些情況下可將堆疊層直接地安置在晶粒上)。
晶粒可包含前側及相對的後側。在某些實施例中,前側可被稱之為晶粒之「作用表面」。若干互連件可從晶粒之前側延伸至下面的基板,且這些互連件可將晶粒與基板電耦合。在某些情況下,晶粒可直接地耦合至板,諸如母板。互連件/跡線可包括能夠在晶粒與基板/板之間提供電通信之任何類型的結構及材料。在某一實施例中,晶粒可以覆晶配置被安置於基板上。在一實施例中,互連件係包括位於晶粒上之導電端子(例如,焊墊、凸塊、柱形凸塊、圓柱、焊柱或其他合適之結構或結構之組合)以及位於基板上之相對應的導電端子(例如,焊墊、凸塊、柱形凸塊、圓柱、焊柱或其他合適之結構或結構之組合)。
焊料(例如,以球或凸塊之形式)可被安置在基板及/或晶粒之端子上,且接著可使用焊料回焊程序來連接這些端子。當然,應瞭解的是,許多其他類型的互連件及材料係可能的(例如,在晶粒與基板之間延伸的銲線結合)。在本文中之某些實施例中,晶粒可以覆晶配置藉由多個互連件與基板耦合。然而,在其他實施例中,可使用替代的結構及/或方法來將晶粒與基板耦合。
描述了形成封裝結構之方法的實施例,其包含在混合封裝結構上形成銲線結合的方法。那些方法/結構可包含將第一晶粒附接在板上;將中介層附接在第一晶粒之頂部表面上;將鄰近中介層之第二晶粒附接在第一晶粒之頂部表面上,其中,第二晶粒係從第一晶粒之中心區域偏移。從第二晶粒延伸至中介層之頂部表面的第一銲線導電結構可被附接至第二晶粒。第二銲線導電結構係被附接至從中介層延伸至板之中介層。在本文中之實施例係使在混合式封裝中的銲線偏移效能及晶粒邊緣間隙增加。
圖1a至1d係繪示製造封裝結構之實施例的橫截面圖,封裝結構係例如包括改善在混合微電子封裝中的銲線偏移之中介層。在圖1a(橫截面圖)中,係展示例如封裝結構100之一部分,諸如混合封裝100。在一實施例中,基板102可包括例如係阻燃(FR4)的板,諸如玻璃纖維增強環氧層壓板。在另一實施例中,封裝基板102可包括例如諸如印刷電路板(PCB板)之板的一部分,且在其他實施例中,基板102可包括母板。
在一實施例中,晶粒106(諸如微電子晶粒)可被安置在基板102的頂部表面上。在一實施例中,晶粒106 (其可包括第一晶粒106)可包括覆晶晶粒。在其他實施例中,晶粒106可包括任何類型的微電子裝置,諸如但不限於微處理器、圖形處理器、信號處理器、網路處理器、晶片組等等。在一實施例中,晶粒106係包括具有多個功能單元(例如,一或多個處理單元、一或多個圖形單元、一或多個通信單元、一或多個信號處理單元、一或多個安全單元等等)的系統單晶片(SOC)。然而,應瞭解的是,揭示之實施例係不被限制於任何特定類型或類別的晶粒/裝置。裝置/晶粒106之底部表面107可藉由焊球/導電結構104而與基板/板102電性及實體耦合。第一晶粒106可包括長度134。
焊球108可被安置在基板/板之底部表面上。中介層112可被安置在晶粒106之頂部表面109上。中介層112可包括例如用於路由信號之任何適當的類型之板/基板,例如諸如PCB板。在一實施例中,中介層112可包括位於頂部表面上的至少一個結合墊。在一實施例中,中介層112可從晶粒106的中心區域/位置122偏移。第二晶粒110可被安置在晶粒106的頂部表面109上,且可在頂部表面上鄰近中介層112。在一實施例中,第二晶粒110可包括記憶體晶粒。
在其他實施例中,根據特定的應用,第二晶粒110可包括任何類型的適合的晶粒/裝置。在一實施例中,第二晶粒110之佔據面積124可從第一晶粒106之中心位置122偏移。第二晶粒110之外圍邊緣可被定位於距晶粒106之端部部分距離126處。第二晶粒110可包括長度136。在一實施例中,第一晶粒106可包括長度134,該長度大於約兩倍的第二晶粒110之長度136。
第一銲線導電結構116可被安置/附接至第二晶粒110。在一實施例中,第一銲線導電結構116可包括銲線結構,且在一實施例中,可藉由諸如球形結合之結合方式而結合至第二晶粒110之頂部表面。在一實施例中,球形結合可包括金、銅或銀,且在本文中之銲線結構可包括類似的材料。在一實施例中,第一銲線導電結構116之第一端115可被附接至第二晶粒110之頂部表面。第一銲線導電結構116之第二端117可被附接/結合至中介層112。在一實施例中,第一銲線導電結構116可包括導電銲線,其中導電銲線之第一端115及第二端117可分別地被結合至第二晶粒110上及中介層112上。在一實施例中,第一銲線導電結構116可從第二晶粒110延伸至中介層112之頂部表面。
在一實施例中,第二銲線導電結構114可從中介層112之頂部表面延伸至板102之頂部表面。在一實施例中,第二銲線導電結構114之第一端119可被安置在中介層112之頂部表面上,且第二銲線導電結構114之第二端121可被安置在板102之頂部表面上。在一實施例中,第二銲線導電結構114之第一端119可鄰近於位於第二晶粒110之頂部表面上的第一銲線導電結構116之第二端117。在一實施例中,第三銲線導電結構118可從頂部晶粒112之頂部表面延伸至板102之頂部表面。在一實施例中,第三銲線導電結構118可被安置在第二晶粒110之頂部表面上,其中,第一銲線116之第一端115係被安置在第二晶粒110之頂部表面的相對側上。
在一實施例中,第二晶粒110之邊緣可從第一晶粒106之邊緣偏移達距離126。在一實施例中,第二銲線導電結構114可被安置在距第一晶粒106之邊緣距離128處,而第三銲線導電結構118可被安置在距第一晶粒106之相對邊緣距離129處。在一實施例中,由於第二晶粒110可小於大約第一晶粒106之長度的一半,所以形成/附接被耦合至中介層112的兩段較短的結合銲線導電結構114、116(而不是將一個較長的銲線從第二晶粒110延伸至板102)係增加銲線導電結構114至第一晶粒106的邊緣間隙128。此外,由於第二晶粒110從第一晶粒106之中心122移位/偏移,所以提高了第三銲線導電結構118的邊緣間隙129。在一實施例中,封裝結構100係包括混合封裝,其中,底部/第一晶粒106係包括覆晶晶粒及頂部/第二晶粒110,其可包括銲線結合晶粒。在一實施例中,在第二晶粒110與板102之間增加了銲線偏移,且降低了板102與第二晶粒110之間的銲線短路及低間隙的發生。
圖1b係描繪封裝基板100之另一實施例,其中,板102係包括兩個第一晶粒106、106’。在一實施例中,第一晶粒106、106’中之至少一者可包括覆晶晶粒,但是可包括根據特定應用之其他類型的裝置。兩個覆晶晶粒106、106’中之各者係分別地在第一晶粒106、106’中之各者的頂部表面上包括中介層112、112’及鄰近的第二晶粒110、110’。在一實施例中,板102可包括被安置於其上之第一及第二模組130、132。第一模組130可包括第一晶粒106,具有中介層112及第二晶粒102,係彼此鄰近地被安置在第一晶粒106之表面上。第二模組132可包括第一晶粒106’,具有中介層112’及第二晶粒102’,係彼此鄰近地被安置在第一晶粒106’之表面上。
第一銲線導電結構116可被安置/附接至第一模組之第二晶粒110。在一實施例中,第一銲線導電結構116可從第二晶粒110延伸至中介層112之頂部表面。在一實施例中,第二銲線導電結構114可從中介層112之頂部表面延伸至板102之頂部表面,其中,第二銲線導電結構114可鄰近於位於中介層之頂部表面上之第一銲線導電結構。在一實施例中,第三銲線導電結構118可從第二晶粒110之頂部表面延伸至板102之頂部表面。在一實施例中,第三銲線導電結構118可鄰近於位於第二晶粒110之頂部表面上之第一銲線導電結構116。
在一實施例中,第一模組130之第二銲線導電結構114可被安置在距第一晶粒106之邊緣距離128處,而第三銲線導電結構118可被安置在距第一晶粒106之相對邊緣距離129處。第二模組132可包括安置/附接至第一模組之第二晶粒110’且從第二晶粒110’延伸至中介層112’之頂部表面的第一銲線導電結構116’。在一實施例中,第二銲線導電結構114’可從中介層112’之頂部表面延伸至板102’之頂部表面,其中,第二銲線導電結構114’可鄰近於位於中介層之頂部表面上之第一銲線導電結構116’。
在一實施例中,第三銲線導電結構118’可從第二晶粒110’之頂部表面延伸至板102之頂部表面。在一實施例中,第三銲線導電結構118’可被安置在第二晶粒110’之頂部表面上,其中,第一銲線導電結構116’之第一端115’係被安置在第二晶粒110’之頂部表面的相對側上。在一實施例中,第二銲線導電結構114’可被安置在距第一晶粒106’之邊緣高度128’處,而第三銲線導電結構118’可被安置在距第一晶粒106’之邊緣高度129’處。在一實施例中,第二晶粒110、110’之佔據面積(諸如圖1a之佔據面積124)可分別地從第一晶粒106、106’之中心位置122、122’偏移達距離125、125’。在一實施例中,第一晶粒106’可被描述為被安置於板102上之第三晶粒,其中,第二中介層112’及第四晶粒(第二晶粒110’)係彼此鄰近地被安置在第三晶粒之頂部表面上。
圖1c係描繪封裝結構100之一部分。第一晶粒106可被安置在板102上,而中介層112及第二晶粒110係被安置在第一晶粒106之頂部表面上。第一銲線導電結構116係從第二晶粒110延伸至中介層112之頂部表面,其中,第一銲線導電結構116之第一端115可被耦合至第二晶粒110之頂部表面(其中,第一端115可在第二晶粒110之頂部表面上被結合至結合墊),而第一銲線導電結構116之第二端117可被耦合至被安置在中介層112上的結合結構113。第二銲線導電結構114之第一端119可被耦合至結合結構113,其中,在一實施例中,第一及第二銲線導電結構116、114係藉由串聯結合結構113而彼此耦合。根據特定的應用,可使用其他適當類型的結合來實體地且電性地耦合位於中介層112上的第一及第二銲線結構116、114。
在一實施例中,兩個正向結合結構113可包括在中介層112之頂部表面上安置/堆疊於彼此之頂部上的兩個結合結構。第二銲線導電結構114之第二端121可從中介層112延伸至板102,且可實體地且電性地耦合至板102。第三銲線導電結構118可從第二晶粒110之頂部表面延伸且可被耦合至板102。邊緣間隙128、129可分別地將第二及第三銲線導電結構114、118從第一晶粒106之邊緣分開。
圖1d係描繪封裝結構100之一部分。第一晶粒106係被安置在板102上,而中介層112及第二晶粒110係被安置在第一晶粒106之頂部表面上。第一銲線導電結構116係從第二晶粒110延伸至中介層112之頂部表面。在一實施例中,第一銲線導電結構116之第一端115可被耦合至第二晶粒110之頂部表面,而第一銲線導電結構116之第二端117可被耦合至被安置於中介層112上的結合結構123。第二銲線導電結構114之第一端119可被耦合至結合結構123,其中,在一實施例中,第一及第二銲線導電結構116、114係藉由兩個正向銲線結合結構123而彼此耦合。
在一實施例中,兩個正向結合結構123可包括彼此鄰近地被安置於中介層112之頂部表面上的兩個結合結構。第二銲線導電結構114之第二端121可從中介層112延伸至板102,且可例如藉由結合墊而被實體地且電性地耦合至板102。第三銲線導電結構118可從第二晶粒110之頂部表面延伸且可被耦合至板102。
圖2係描繪例如依照實施例之用於製造封裝結構(諸如圖1之封裝結構100)的程序流程200。在步驟202,諸如矽晶圓之晶圓可被曝露於背磨程序。在步驟204至206,可安裝晶圓且將晶圓切割成單獨的晶粒。在步驟208至210,該分離的晶粒可被光學檢查且覆晶結合至基板上,諸如至板上。在步驟212至214,晶粒可進行焊料凸塊回焊及助焊劑清洗。在步驟216至218,晶粒可被光學檢查且第二晶粒可被銲線結合及晶粒附接至覆晶之頂部表面上。中介層亦可有晶粒附接及銲線結合至覆晶之頂部表面上。在步驟220至224,可施加預銲線結合電漿,且可進行額外的銲線結合及第三光學檢查。在一實施例中,步驟202至224可包括前段製程(FOL)程序步驟。
在步驟226至228,可在將封膠施加至封裝之前在封裝結構上執行封膠電漿清洗。在步驟230至232,可執行PMC(封膠後固化)及雷射標記。在步驟234至236,可執行預清洗及焊球附接以及焊料回焊。在步驟238至240,可執行封裝切割及球掃描,且在步驟242至246,可執行最終的視覺檢查及封裝以及運輸。
在本文中所述之封裝組件/結構之各種實施例係由於附接至中介層的每段的較短的銲線長度而實現了改進的銲線偏移效能。從添加的中介層結構附接至底部/覆晶晶粒之銲線係包括更大的邊緣間隙,其使漏電的風險最小化。因此,例如,由於短路及漏電之故障減少而使組裝良率及測試良率將得到改善。藉由將封裝結構之較小的頂部晶粒從較大的底部晶粒之中心區域移開,而將從頂部晶粒至板之銲線長度減小。改善產品設計之組裝及測試良率兩者。
圖3係描繪依照在本文中之實施例之形成封裝結構的方法300。在步驟302,可將第一晶粒附接在板上。在一實施例中,該第一晶粒可包括覆晶晶粒,而該板可包括母板。在步驟304,可將中介層附接在第一晶粒之頂部表面上。在一實施例中,中介層可包括矽中介層,且可從第一晶粒之中心部分偏移。
在步驟306,可將鄰近中介層之第二晶粒附接在第一晶粒之頂部表面上。在一實施例中,第一晶粒可包括大於約兩倍的第二晶粒長度的長度。在一實施例中,第二晶粒可從第一晶粒之中心部分/點偏移。在步驟308,將從板延伸出之第一銲線導電結構附接至中介層之頂部表面。在步驟310,將從中介層延伸出之第二銲線導電結構附接至第二晶粒。在一實施例中,第一及第二銲線導電結構可被實體地且電性地耦合至被安置在中介層之頂部表面上的結合結構/結合墊上。在一實施例中,第三銲線可被附接至中介層,且可包括從板引線/墊至中介層結合墊之銲線結合。
在本文中之實施例之結構可與能夠提供安置在封裝結構中之微電子裝置(諸如晶粒)與可將封裝結構耦合至其上的下一級組件(例如,電路板)之間的電通信之任何適當的類型的結構耦合。例如,在本文中之實施例之裝置/封裝結構及其之組件可包括電路元件,諸如用於使用在處理器晶粒中的邏輯電路。金屬化層及絕緣材料可被包括在本文中之結構中,以及可將金屬層/互連件耦合至外部裝置/層的導電接點/凸塊中。在某些實施例中,取決於特定的實施例,該結構可進一步包括可堆疊於彼此上之複數個晶粒。在一實施例中,該晶粒可被部分地或完全地埋設在封裝結構中。
在本文中所包括之封裝結構之各種實施例可被使用於系統單晶片(SOC)產品,且可在諸如智慧型電話、筆記型電腦、平板電腦、可穿戴裝置及其他電子行動裝置的裝置中找到應用。在各種實施方案中,封裝結構可被包括在膝上型電腦、小型筆記型電腦、筆記型電腦、超輕薄筆記型電腦、智慧型電話、平板電腦、個人數位助理(PDA)、超行動PC、行動電話、桌上型電腦、伺服器、印表機、掃描器、監視器、機上盒、娛樂控制單元、數位相機、可攜式音樂播放器或數位視訊記錄器及可穿戴裝置。在進一步的實施方案中,在本文中之封裝裝置可被包括在處理資料的任何其他電子裝置中。
圖4係可結合在本文中所述之封裝結構之實施例來實施之計算裝置400的示意圖。例如,計算裝置400之組件中之任何適當者可包含或被包括在封裝結構(諸如圖1a之封裝結構100)中,例如,依照在本文中所揭示之實施例中之任一者。例如,在一實施例中,計算裝置400係容納板402(諸如母板402)。板402可包含多個組件,其包含但不限於處理器404、晶粒上記憶體406及至少一個通信晶片408。處理器404可被實體地且電性地耦合至板402。在某些實施方案中,至少一個通信晶片408可被實體地且電性地耦合至板402。在進一步的實施方案中,通信晶片408係處理器404之一部分。
取決於其之應用,計算裝置400可包含可或可不被實體地且電性地耦合至板402之其他組件,且可或可不彼此通信地耦合。這些其他組件係包含但不限於揮發性記憶體(例如,DRAM)409、非揮發性記憶體(例如,ROM) 410、快閃記憶體411、圖形處理器單元(GPU)412、晶片組414、天線416、顯示器418(諸如觸控螢幕顯示器)、觸控螢幕控制器420、電池422、音訊編解碼器(未圖示)、視訊編解碼器(未圖示)、全球定位系統(GPS)裝置426、揚聲器430、相機432、光碟(CD)(未圖示)、數位多功能光碟(DVD)(未圖示),等等。這些組件可被連接至系統板402、被安裝至系統板或與其他組件中之任一者組合。
通信晶片408使得無線及/或有線通信能夠將資料轉移至計算裝置400及從計算裝置400來轉移資料。術語「無線」及其之衍生詞可被使用以描述其可藉由使用通過非固態媒體之調變電磁輻射來通信資料之電路、裝置、系統、方法、技術、通信通道等等。術語不意味著相關裝置不含有任何電線,儘管在某些實施例中其等可能不包含電線。通信晶片408可實施多種無線或有線標準或協定中之任一種,其包含但不限於Wi-Fi(IEEE 802.11系列)、WiMAX(IEEE 802.16系列)、IEEE 802.20、長期演進(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍牙、其之乙太網衍生物以及被指稱為3G、4G、5G及更先進之任何其他無線及有線協定。計算裝置400可包括複數個通信晶片408。例如,第一通信晶片可專用於較短距離的無線通信,諸如Wi-Fi及藍牙,而第二通信晶片可專用於較長距離的無線通信,諸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO等等。術語「處理器」可指處理來自於暫存器及/或記憶體之電子資料以將電子資料轉換成可被儲存在暫存器及/或記憶體中的其他電子資料之任何裝置或裝置的一部分。
在各種實施方案中,計算裝置400可以係膝上型電腦、小型筆記型電腦、筆記型電腦、超輕薄筆記型電腦、智慧型電話、平板電腦、個人數位助理(PDA)、超行動PC、可穿戴裝置、行動電話、桌上型電腦、伺服器、印表機、掃描器、監視器、機上盒、娛樂控制單元、數位相機、可攜式音樂播放器或數位視訊記錄器。在進一步之實施方案中,計算裝置600可以係處理資料之任何其他電子裝置。
在本文中所述之封裝結構的實施例可被實施為使用母板互連的一或多個記憶體晶片、控制器、CPU (中央處理單元)、微晶片或積體電路的一部分、專用積體電路(ASIC)及/或場可程式化閘極陣列(FPGA)。
實例
實例1係一種微電子封裝結構,其包括:第一晶粒,其在基板之第一側上;中介層,其在該第一晶粒之第二側上;第二晶粒,其在該第一晶粒之該第二側上,其中,該第二晶粒係鄰近該中介層;第一銲線導電結構,其中,該第一銲線之第一端係被安置在該第二晶粒上,而該第一銲線導電結構之第二端係被安置在該中介層上;及第二銲線導電結構,其中,該第二銲線導電結構之第一端係被安置在該中介層上且係鄰近該第一銲線導電結構之該第二端,其中,該第二銲線導電結構之第二端係被安置在該基板上。
實例2係包含實例1之微電子封裝結構,其中,該第二銲線導電結構之該第一端與該第一銲線導電結構之該第二端係實體耦合至被安置在該中介層之該頂側上的接合連接結構。
實例3係包含實例1之微電子封裝結構,其中,該中介層之佔據面積係從該第一晶粒之中心點偏移一距離。
實例4係包含實例1之微電子封裝結構,其中,該第一晶粒包括覆晶晶粒。
實例5係包含實例1之微電子封裝結構,其中,該第二晶粒包括記憶體晶粒。
實例6係包含實例1之微電子封裝結構,其中,該第一記憶體裝置之佔據面積係大致上不從該微電子裝置之佔據面積偏移。
實例7係包含實例1之微電子封裝結構,其中,該第一晶粒長度大於約兩倍的該第二晶粒長度。
實例8係包含實例1之微電子封裝結構,其中,該第二晶粒之佔據面積係從該第一晶粒之中心點偏移一距離。
實例9係一種微電子封裝結構,其包括:板;在該板上之第一晶粒;中介層,其在該第一晶粒之頂部表面上;第二晶粒,其在該第一晶粒之該頂部表面上,其係鄰近該中介層,其中,該第二晶粒之佔據面積係從該第一晶粒之中心區域偏移。第一銲線導電結構,其從該第二晶粒延伸出且附接至該中介層之頂部表面;及第二銲線導電結構,其從該中介層延伸出且附接至該板。
實例10係包含實例9之微電子封裝結構,其中,該第一及第二銲線導電結構係彼此實體地且電性地耦合在該中介層上。
實例11係包含實例10之微電子封裝結構,其中,該第一銲線導電結構之第一端係結合至被安置在該第二晶粒之頂部表面之周邊區域上的結合墊。
實例12係包含實例9之微電子封裝結構,其中,第三銲線導電結構係從該第二晶粒延伸至該板。
實例13係包含實例9之微電子封裝結構,其中,第三晶粒被安置在該板上,其中,第二中介層及第四晶粒係彼此鄰近安置在該第三晶粒之頂部表面上。
實例14係包含實例13之微電子封裝結構,其中,第四銲線導電結構係從該第四晶粒延伸出且被附接至該第二中介層之頂部表面。
實例15係包含實例14之微電子封裝結構,其中,第五銲線導電結構係從該第二中介層延伸出且被附接至該板。
實例16係包含實例9之微電子封裝結構,其中,該中介層之佔據面積係從其中該中介層之該第一晶粒之中心區域偏移。
實例17係一種形成微電子封裝結構之方法,其包括:將第一晶粒附接在板上;將中介層附接在該第一晶粒之頂部表面上;將鄰近該中介層之第二晶粒附接在該第一晶粒之該頂部表面上;將從該板延伸出之第一銲線導電結構附接至該中介層之頂部表面;及將從該中介層之該頂部表面延伸出之第二銲線導電結構附接至該第二晶粒之頂部表面。
實例18係包含形成實例17之微電子封裝結構之方法,其中,該第一導電銲線結構及該第二銲線導電結構係實體地且電性地結合至該中介層之頂部表面上的結合墊。
實例19係包含形成實例17之微電子封裝結構之方法,其中,該第二晶粒係包括從該第一晶粒之中心部分偏移的佔據面積。
實例20係包含形成實例17之微電子封裝結構之方法,其中,該第一晶粒係包括覆晶晶粒。
實例21係包含形成實例20之微電子封裝結構之方法,其進一步包括,其中,該第一晶粒包括大於約兩倍的該第二晶粒長度的長度。
實例22係包含形成實例17之微電子封裝結構之方法,其進一步包括,將第三銲線導電結構從該第二晶粒附接至該板。
實例23係包含形成實例17之微電子封裝結構之方法,其進一步包括,將第四銲線導電結構從該第二晶粒附接至該板。
實例24係包含形成實例17之微電子封裝結構之方法,其中,該微電子封裝係包括混合式封裝結構。
實例25係包含形成實例17之微電子封裝結構之方法,其中,該微電子封裝結構係包括行動裝置之一部分。
儘管前面的描述已經詳述可在實施例方法中使用的某些步驟及材料,但是熟習本領域之技術者將會理解,可進行許多修改及替換。因此,所有此種的修改、變更、替換及添加係旨在被認為是落入由所附之申請專利範圍所界定之實施例的精神及範圍內。此外,在本文中所提供之附圖僅繪示與實施例之實施有關的例示性微電子裝置及相關的封裝結構之部分。因此,實施例不被限制於在本文中所述之結構。
100:封裝結構
102:基板
104:焊球/導電結構
106:第一晶粒
107:底部表面
108:焊球
109:頂部表面
110:第二晶粒
112:中介層
113:結合結構
114:第二銲線導電結構
115:第一端
116:第一銲線導電結構
117:第二端
118:第三銲線導電結構
119:第一端
121:第二端
122:中心區域/位置
123:結合結構
124:佔據面積
125:距離
126:距離
128:距離
129:距離
130:第一模組
132:第二模組
134:長度
136:長度
200:程序流程
202:步驟
204:步驟
206:步驟
208:步驟
210:步驟
212:步驟
214:步驟
216:步驟
218:步驟
220:步驟
224:步驟
226:步驟
228:步驟
230:步驟
232:步驟
234:步驟
236:步驟
238:步驟
240:步驟
242:步驟
246:步驟
300:方法
302:步驟
304:步驟
306:步驟
308:步驟
310:步驟
400:計算裝置
402:母板
404:處理器
406:晶粒上記憶體
408:通信晶片
409:揮發性記憶體
410:非揮發性記憶體
411:快閃記憶體
412:圖形處理器單元(GPU)
414:晶片組
416:天線
418:顯示器
420:觸控螢幕控制器
422:電池
426:全球定位系統(GPS)裝置
430:揚聲器
432:相機
600:計算裝置
儘管本說明書係以特別地指出且明確地主張某些實施例之申請專利範圍作為結論,但是當結合附圖來閱讀時,可從以下對本發明之描述中更容易地確定這些實施例的優點,在附圖中:
[圖1a至1d]係表示依照實施例之結構的橫截面圖。
[圖2]係表示依照實施例之程序流程。
[圖3]係表示依照實施例之方法的流程圖。
[圖4]係表示依照實施例之計算裝置的示意圖。
100:封裝結構
102:基板
104:焊球/導電結構
106:第一晶粒
107:底部表面
108:焊球
109:頂部表面
110:第二晶粒
112:中介層
114:第二銲線導電結構
115:第一端
116:第一銲線導電結構
117:第二端
118:第三銲線導電結構
119:第一端
121:第二端
122:中心區域/位置
124:佔據面積
126:距離
128:距離
129:距離
136:長度
Claims (7)
- 一種封裝結構,包括: 具有頂部表面和底部表面的印刷電路板; 在該印刷電路板的該頂部表面上方並電耦合到該印刷電路板的該頂部表面的第一晶粒,該第一晶粒具有頂部表面、長度和中心位置; 在該第一晶粒的該頂部表面上的第二晶粒,該第二晶粒的長度小於該第一晶粒的長度,並且該第二晶粒具有從該第一晶粒的該中心位置偏移的佔據面積; 在該第一晶粒的該頂部表面上的中介層,該中介層的長度小於該第一晶粒的長度; 電耦合到該第二晶粒和該中介層的第一銲線導電結構; 將該中介層電耦合到該印刷電路板的該頂部表面的第二銲線導電結構; 將該第二晶粒電耦合到該印刷電路板的該頂部表面的第三銲線導電結構;和 在該印刷電路板的該底部表面上的複數個焊球。
- 如請求項1之封裝結構,其中該第一晶粒在該印刷電路板的該頂部表面上。
- 如請求項1之封裝結構,其中該第一晶粒被包括在晶粒的堆疊中。
- 如請求項1之封裝結構,其中該第一銲線導電結構在該第二晶粒的頂部表面上和該中介層的頂部表面上。
- 如請求項1之封裝結構,其中該第二銲線導電結構在該中介層的頂部表面上和該印刷電路板的該頂部表面上。
- 如請求項1之封裝結構,其中該第三銲線導電結構在該第二晶粒的頂部表面上和該印刷電路板的該頂部表面上。
- 如請求項1之封裝結構,其中該第二晶粒是記憶體控制器晶粒。
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PCT/CN2016/113597 WO2018120060A1 (en) | 2016-12-30 | 2016-12-30 | Interposer design in package structures for wire bonding applications |
WOPCT/CN2016/113597 | 2016-12-30 |
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KR (1) | KR20190098132A (zh) |
CN (1) | CN110419101A (zh) |
DE (1) | DE112016007556T5 (zh) |
TW (2) | TWI802446B (zh) |
WO (1) | WO2018120060A1 (zh) |
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US20210028140A1 (en) * | 2019-07-25 | 2021-01-28 | Samtec, Inc. | Wirebondable interposer for flip chip packaged integrated circuit die |
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US5168368A (en) * | 1991-05-09 | 1992-12-01 | International Business Machines Corporation | Lead frame-chip package with improved configuration |
JPH0621134A (ja) * | 1992-07-01 | 1994-01-28 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP3304672B2 (ja) * | 1995-03-28 | 2002-07-22 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
DE10205563B4 (de) * | 2002-02-11 | 2009-06-10 | Advanced Micro Devices, Inc., Sunnyvale | Gehäustes Halbleiterbauelement mit zwei Die-Paddles sowie zugehöriges Herstellungsverfahren |
JP4615189B2 (ja) * | 2003-01-29 | 2011-01-19 | シャープ株式会社 | 半導体装置およびインターポーザチップ |
JP2007019415A (ja) * | 2005-07-11 | 2007-01-25 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7732930B2 (en) | 2006-09-06 | 2010-06-08 | Kabushiki Kaisha Toshiba | Semiconductor device, relay chip, and method for producing relay chip |
JP5205867B2 (ja) | 2007-08-27 | 2013-06-05 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
CN201311930Y (zh) * | 2007-12-07 | 2009-09-16 | 利顺精密科技股份有限公司 | 改进的晶体管构装结构 |
KR101024748B1 (ko) * | 2008-12-15 | 2011-03-24 | 하나 마이크론(주) | 서포터 칩을 갖는 반도체 패키지 및 그 제조 방법 |
US20120286409A1 (en) * | 2011-05-10 | 2012-11-15 | Jitesh Shah | Utilizing a jumper chip in packages with long bonding wires |
WO2013007029A1 (en) * | 2011-07-14 | 2013-01-17 | Sandisk Semiconductor (Shanghai) Co., Ltd. | Chip-on-package structure for multiple die stacks |
KR102064870B1 (ko) * | 2013-08-16 | 2020-02-11 | 삼성전자주식회사 | 반도체 패키지 |
US9842831B2 (en) | 2015-05-14 | 2017-12-12 | Mediatek Inc. | Semiconductor package and fabrication method thereof |
CN204946895U (zh) * | 2015-08-12 | 2016-01-06 | 深圳市兴森快捷电路科技股份有限公司 | 一种多芯片的封装结构 |
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2016
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- 2016-12-30 DE DE112016007556.1T patent/DE112016007556T5/de not_active Withdrawn
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- 2016-12-30 WO PCT/CN2016/113597 patent/WO2018120060A1/en active Application Filing
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- 2017-11-14 TW TW106139288A patent/TWI767957B/zh active
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2021
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DE112016007556T5 (de) | 2019-09-12 |
US20210183819A1 (en) | 2021-06-17 |
CN110419101A (zh) | 2019-11-05 |
TWI802446B (zh) | 2023-05-11 |
US10971478B2 (en) | 2021-04-06 |
TW201841319A (zh) | 2018-11-16 |
KR20190098132A (ko) | 2019-08-21 |
WO2018120060A1 (en) | 2018-07-05 |
US20190371767A1 (en) | 2019-12-05 |
TWI767957B (zh) | 2022-06-21 |
US11652087B2 (en) | 2023-05-16 |
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