TW202237786A - Adhesive agent composition, film-form adhesive agent, dicing/die-bonding integrated film, semiconductor device, and method for manufacturing same - Google Patents
Adhesive agent composition, film-form adhesive agent, dicing/die-bonding integrated film, semiconductor device, and method for manufacturing same Download PDFInfo
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- TW202237786A TW202237786A TW111100544A TW111100544A TW202237786A TW 202237786 A TW202237786 A TW 202237786A TW 111100544 A TW111100544 A TW 111100544A TW 111100544 A TW111100544 A TW 111100544A TW 202237786 A TW202237786 A TW 202237786A
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- adhesive
- film
- semiconductor element
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- adhesive composition
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C09J7/10—Adhesives in the form of films or foils without carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J7/00—Adhesives in the form of films or foils
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Abstract
Description
本揭示係有關一種接著劑組成物、膜狀接著劑、切割晶粒接合（dicing/die-bonding）一體型膜、以及半導體裝置及其製造方法。The present disclosure relates to an adhesive composition, a film-like adhesive, a dicing/die-bonding integrated film, a semiconductor device, and a manufacturing method thereof.
近年來，已普及將半導體元件（半導體晶片）積層為多層而成之層疊式MCP（Multi Chip Package：多晶片封裝），作為行動電話、可攜式音頻設備用記憶體半導體封裝等而搭載。又，伴隨行動電話等的多功能化，亦推進半導體封裝的高速化、高密度化、高積體化等。In recent years, stacked MCPs (Multi Chip Packages) in which semiconductor elements (semiconductor chips) are stacked in multiple layers have become popular, and are mounted as memory semiconductor packages for mobile phones and portable audio equipment. In addition, along with the multifunctionalization of mobile phones and the like, the speed-up, high-density, and high-integration of semiconductor packages are also advancing.
目前，作為半導體裝置之製造方法，通常使用半導體晶圓背面貼附方式，該半導體晶圓背面貼附方式在半導體晶圓的背面貼附具備接著劑層及黏著劑層之切割晶粒接合一體型膜，然後切斷半導體晶圓、接著劑層及黏著劑層的一部分而使其單片化。例如，在專利文獻1、2中揭示了用於這樣的方式的接著劑層之膜狀接著劑。At present, as a method of manufacturing semiconductor devices, a semiconductor wafer back-attaching method is generally used. In this semiconductor wafer back-attaching method, a diced die-bonding integrated type that includes an adhesive layer and an adhesive layer is attached to the back surface of a semiconductor wafer. film, and then cut the semiconductor wafer, the adhesive layer, and a part of the adhesive layer to separate them into pieces. For example,
[專利文獻1]國際公開第2013/133275號 [專利文獻2]國際公開第2020/013250號 [Patent Document 1] International Publication No. 2013/133275 [Patent Document 2] International Publication No. 2020/013250
然而，在層疊式MCP中，由於半導體元件積層為多層，因此要求所使用之膜狀接著劑薄膜化（例如，厚度30μm以下或10μm以下）。然而，若將以往的膜狀接著劑薄膜化，則膜狀接著劑的支撐構件的表面或半導體元件的表面的凹凸埋入性有時不充分，尚有改善的餘地。藉由改善膜狀接著劑的凹凸埋入性，能夠提高所得到之半導體裝置的連接可靠性，進而能夠期待提高半導體裝置的製造製程中的產率。However, in the stacked MCP, since the semiconductor element is stacked in multiple layers, the film adhesive used is required to be thinner (for example, the thickness is 30 μm or less or 10 μm or less). However, when the conventional film-like adhesive is thinned, the surface of the support member of the film-like adhesive or the embedding property of the surface of the semiconductor element may not be sufficient, and there is room for improvement. By improving the concave-convex embedding property of the film adhesive, the connection reliability of the obtained semiconductor device can be improved, and further, the improvement of the yield in the manufacturing process of the semiconductor device can be expected.
膜狀接著劑的凹凸埋入性能夠藉由使膜狀接著劑低黏度化來提高。然而，若使用這樣的低黏度的膜狀接著劑，則固化後的儲存彈性模數不充分，在無法設置接合導線這樣的導線接合性方面具有不充分的傾向。因此，要求膜狀接著劑能夠實現薄膜化（薄膜塗佈性優異），並且能夠兼顧凹凸埋入性與導線接合性（換言之，能夠兼顧固化前的低黏度化與固化後的高彈性化）。The uneven embedding property of the film adhesive can be improved by lowering the viscosity of the film adhesive. However, when such a low-viscosity film-like adhesive is used, the storage elastic modulus after curing is insufficient, and there is a tendency that the wire bondability such that bonding wires cannot be provided is insufficient. Therefore, film adhesives are required to be thinner (excellent film coatability), and to be able to achieve both uneven embedding and wire bonding properties (in other words, low viscosity before curing and high elasticity after curing).
因此，本揭示的主要目的為提供一種能夠形成薄膜塗佈性優異且凹凸埋入性及導線接合性優異的膜狀接著劑之接著劑組成物。Therefore, the main object of the present disclosure is to provide an adhesive composition capable of forming a film-like adhesive having excellent thin-film applicability, unevenness embedding property, and wire bonding property.
本揭示的一方面係有關一種接著劑組成物。該接著劑組成物含有環氧樹脂、軟化點為90℃以上之第1固化劑、軟化點小於90℃之第2固化劑及彈性體。以接著劑組成物的總質量為基準，彈性體的含量為22～45質量%。依據這樣的接著劑組成物，能夠形成薄膜塗佈性優異且凹凸埋入性及導線接合性優異的膜狀接著劑。第1固化劑的軟化點與第2固化劑的軟化點之差可以為10℃以上。One aspect of the present disclosure relates to an adhesive composition. The adhesive composition contains epoxy resin, a first curing agent with a softening point of 90°C or higher, a second curing agent with a softening point of less than 90°C, and an elastomer. Based on the total mass of the adhesive composition, the content of the elastomer is 22-45% by mass. According to such an adhesive composition, it is possible to form a film-like adhesive that is excellent in thin film applicability, embedding of unevenness, and wire bonding. The difference between the softening point of the first curing agent and the softening point of the second curing agent may be 10° C. or more.
環氧樹脂亦可以含有軟化點為40℃以下之環氧樹脂。The epoxy resin may contain an epoxy resin whose softening point is 40° C. or lower.
以接著劑組成物的總質量為基準，環氧樹脂、第1固化劑及第2固化劑的合計含量可以為20質量%以上。Based on the total mass of the adhesive composition, the total content of the epoxy resin, the first curing agent, and the second curing agent may be 20% by mass or more.
接著劑組成物亦可以還含有無機填料。在該情況下，無機填料的平均粒徑可以為0.7μm以下。以接著劑組成物的總質量為基準，無機填料的含量可以小於50質量%。The adhesive composition may further contain an inorganic filler. In this case, the average particle diameter of the inorganic filler may be 0.7 μm or less. Based on the total mass of the adhesive composition, the content of the inorganic filler may be less than 50% by mass.
以170℃、1小時的條件固化後的150℃下的儲存彈性模數可以為23MPa以上。The storage elastic modulus at 150° C. after curing under the conditions of 170° C. and 1 hour may be 23 MPa or more.
接著劑組成物可以用於將複數個半導體元件積層而成之半導體裝置的製造製程。在該情況下，半導體裝置可以為層疊式MCP，亦可以為三維NAND型記憶體。The adhesive composition can be used in the manufacturing process of a semiconductor device formed by laminating a plurality of semiconductor elements. In this case, the semiconductor device may be a stacked MCP or a three-dimensional NAND memory.
本揭示的另一方面係有關一種膜狀接著劑。該膜狀接著劑係將上述接著劑組成物成形為膜狀而成。膜狀接著劑的厚度可以為30μm以下或10μm以下。Another aspect of the disclosure relates to a film adhesive. The film adhesive is obtained by molding the above adhesive composition into a film. The thickness of the film adhesive may be 30 μm or less or 10 μm or less.
本揭示的另一方面係有關一種切割晶粒接合一體型膜。該切割晶粒接合一體型膜依序具備基材層、黏著劑層及由上述接著劑組成物形成之接著劑層。Another aspect of the present disclosure relates to a diced die bonding integrated film. This dicing die bonding integrated film sequentially includes a base material layer, an adhesive layer, and an adhesive layer formed of the above-mentioned adhesive composition.
本揭示的另一方面係有關一種半導體裝置。該半導體裝置具備：半導體元件；支撐構件，搭載半導體元件；及接著構件，設置於半導體元件與支撐構件之間，接著半導體元件與支撐構件。接著構件為上述接著劑組成物的固化物。半導體裝置亦可以還具備積層在半導體元件的表面上之其他半導體元件。Another aspect of the disclosure relates to a semiconductor device. The semiconductor device includes: a semiconductor element; a supporting member on which the semiconductor element is mounted; and a bonding member provided between the semiconductor element and the supporting member, and bonding the semiconductor element and the supporting member. The adhesive member is a cured product of the above-mentioned adhesive composition. The semiconductor device may further include another semiconductor element stacked on the surface of the semiconductor element.
本揭示的另一方面係有關一種半導體裝置之製造方法。該半導體裝置之製造方法的一態樣包括：使上述接著劑組成物介在於半導體元件與支撐構件之間或第1半導體元件與第2半導體元件之間，將半導體元件與支撐構件、或將第1半導體元件與第2半導體元件接著之步驟。Another aspect of the disclosure relates to a method of manufacturing a semiconductor device. One aspect of the manufacturing method of the semiconductor device includes: interposing the above-mentioned adhesive composition between the semiconductor element and the support member or between the first semiconductor element and the second semiconductor element, and placing the semiconductor element and the support member, or the first semiconductor element The step of connecting the 1st semiconductor element and the 2nd semiconductor element.
該半導體裝置之製造方法的另一態樣包括：在上述切割晶粒接合一體型膜的接著劑層上貼附半導體晶圓之步驟；藉由切斷貼附有接著劑層之半導體晶圓，製作複數個單片化之附有接著劑片之半導體元件之步驟；及經由接著劑片將附有接著劑片之半導體元件接著於支撐構件上之步驟。半導體裝置之製造方法亦可以還包括經由接著劑片將其他附有接著劑片之半導體元件接著於與支撐構件接著之半導體元件的表面上之步驟。 [發明效果] Another aspect of the manufacturing method of the semiconductor device includes: a step of attaching a semiconductor wafer on the adhesive layer of the above-mentioned diced die-bonding integrated film; cutting the semiconductor wafer attached with the adhesive layer, A step of manufacturing a plurality of singulated semiconductor elements with an adhesive sheet; and a step of adhering the semiconductor element with an adhesive sheet on a support member via the adhesive sheet. The method of manufacturing a semiconductor device may further include a step of bonding other semiconductor elements with an adhesive sheet on the surface of the semiconductor element bonded to the support member via the adhesive sheet. [Invention effect]
依據本揭示，提供一種能夠形成薄膜塗佈性優異且凹凸埋入性及導線接合性優異的膜狀接著劑之接著劑組成物。又，依據本揭示，提供一種使用這樣的接著劑組成物之膜狀接著劑、切割晶粒接合一體型膜、以及半導體裝置及其製造方法。進而，依據本揭示，提供一種使用這樣的切晶黏晶一體型膜之半導體裝置之製造方法。According to the present disclosure, there is provided an adhesive composition capable of forming a film-like adhesive having excellent thin-film applicability, concave-convex embedding property, and wire bonding property. Also, according to the present disclosure, there are provided a film adhesive using such an adhesive composition, a dicing die bonding integrated film, a semiconductor device, and a method of manufacturing the same. Furthermore, according to the present disclosure, there is provided a method of manufacturing a semiconductor device using such a die-bonding integrated film.
以下，適當參閱圖式對本揭示的實施形態進行說明。然而，本揭示並不限定於以下的實施形態。在以下的實施形態中，除了特別明示之情況以外，其構成要素（亦包括步驟等）不是必須的。各圖中的構成要素的大小為概念性的大小，構成要素之間的大小的相對關係並不限定於各圖所示之關係。Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, this indication is not limited to the following embodiment. In the following embodiments, the constituent elements (including steps and the like) are not essential unless otherwise specified. The size of the components in each figure is a conceptual size, and the relative size relationship between the components is not limited to the relationship shown in each figure.
關於本揭示中的數值及其範圍亦相同，並不限制本揭示。在本說明書中，使用“～”表示之數值範圍表示將記載於“～”前後之數值分別作為最小值及最大值包含之範圍。在本說明書中階段性地記載之數值範圍內，一個數值範圍所記載之上限值或下限值亦可以替換成其他階段性地記載之數值範圍的上限值或下限值。又，在本說明書中記載之數值範圍內，該數值範圍的上限值或下限值亦可以替換成實施例中所示之值。又，個別地記載之上限值及下限值能夠任意地進行組合。又，“A或B”只要包含A及B中的任一者即可，亦可以包含兩者。又，只要沒有特別說明，以下例示之材料可以單獨使用一種，亦可以組合兩種以上來使用。在組成物中存在複數個符合各成分之物質之情況下，只要沒有特別說明，組成物中的各成分的含量係指組成物中存在之該複數個物質的合計量。The same applies to numerical values and their ranges in the present disclosure, and do not limit the present disclosure. In this specification, the numerical range represented by "-" means the range which includes the numerical value described before and after "-" as a minimum value and a maximum value, respectively. Within the numerical ranges described step by step in this specification, the upper limit or lower limit described in one numerical range may also be replaced with the upper limit or lower limit of other numerical ranges described stepwise. Moreover, within the numerical range described in this specification, the upper limit or the lower limit of the numerical range may be replaced with the value shown in an Example. In addition, the upper limit and lower limit described individually can be combined arbitrarily. Moreover, "A or B" should just include any one of A and B, and may include both. In addition, unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more. When a plurality of substances corresponding to each component exist in the composition, unless otherwise specified, the content of each component in the composition refers to the total amount of the plurality of substances present in the composition.
在本說明書中，（甲基）丙烯酸酯係指丙烯酸酯或與其對應之甲基丙烯酸酯。關於（甲基）丙烯醯基、（甲基）丙烯酸共聚物等其他類似表述亦相同。In this specification, (meth)acrylate means acrylate or its corresponding methacrylate. The same applies to other similar expressions such as (meth)acryl group and (meth)acrylic acid copolymer.
[接著劑組成物] 一實施形態之接著劑組成物含有環氧樹脂（以下，有時稱為“（A）成分”。）、軟化點為90℃以上之第1固化劑（以下，有時稱為“（B1）成分”。）、軟化點小於90℃之第2固化劑（以下，有時稱為“（B2）成分”。）及彈性體（以下，有時稱為“（C）成分”。）。接著劑組成物除了含有（A）成分、（B1）成分、（B2）成分及（C）成分以外，亦可以還含有無機填料（以下，有時稱為“（D）成分”。）、偶合劑（以下，有時稱為“（E）成分”。）、固化促進劑（以下，有時稱為“（F）成分”。）及其他成分等。接著劑組成物可以具有熱固性，亦可以經過半固化（B階段）狀態，在固化處理後能夠成為完全固化（C階段）狀態。 [adhesive composition] An adhesive composition according to one embodiment contains an epoxy resin (hereinafter, sometimes referred to as "component (A)"), and a first curing agent (hereinafter, sometimes referred to as "(B1) component") having a softening point of 90°C or higher. Component."), a second curing agent with a softening point of less than 90°C (hereinafter, sometimes referred to as "(B2) component"), and an elastomer (hereinafter, sometimes referred to as "(C) component"). The adhesive composition may contain an inorganic filler (hereinafter sometimes referred to as "(D) component"), an occasional Compounding agent (hereinafter, may be referred to as "component (E)"), curing accelerator (hereinafter, may be referred to as "component (F)"), and other components. The adhesive composition may be thermosetting, or may be in a semi-cured (B-stage) state, and can be fully cured (C-stage) after curing.
（A）成分：環氧樹脂 （A）成分只要係在分子內具有環氧基之樹脂，則能夠並無特別限制地使用。作為（A）成分，例如可舉出雙酚A型環氧樹脂；雙酚F型環氧樹脂；雙酚S型環氧樹脂；苯酚酚醛清漆型環氧樹脂；甲酚酚醛清漆型環氧樹脂；雙酚A酚醛清漆型環氧樹脂；雙酚F酚醛清漆型環氧樹脂；茋型環氧樹脂；三𠯤骨架含有環氧樹脂；茀骨架含有環氧樹脂；三酚甲烷型環氧樹脂；聯苯型環氧樹脂；伸茬基（xylylene）型環氧樹脂；聯苯芳烷基（biphenyl aralkyl）型環氧樹脂；萘型環氧樹脂；多官能酚類；蒽等多環芳香族類的二環氧丙基醚化合物等。該等亦可以單獨使用一種或組合兩種以上來使用。該等之中，從薄膜的黏性、柔軟性等的觀點而言，（A）成分亦可以含有甲酚酚醛清漆型環氧樹脂、雙酚F型環氧樹脂或雙酚A型環氧樹脂。 (A) Component: epoxy resin The component (A) can be used without particular limitation as long as it is a resin having an epoxy group in the molecule. Examples of the component (A) include bisphenol A type epoxy resin; bisphenol F type epoxy resin; bisphenol S type epoxy resin; phenol novolak type epoxy resin; cresol novolak type epoxy resin ; Bisphenol A novolak type epoxy resin; Bisphenol F novolak type epoxy resin; Stilbene type epoxy resin; Three 𠯤 skeleton contains epoxy resin; Biphenyl type epoxy resin; xylylene type epoxy resin; biphenyl aralkyl type epoxy resin; naphthalene type epoxy resin; multifunctional phenols; anthracene and other polycyclic aromatics Diglycidyl ether compounds, etc. These can also be used individually by 1 type or in combination of 2 or more types. Among them, the component (A) may contain a cresol novolak type epoxy resin, a bisphenol F type epoxy resin, or a bisphenol A type epoxy resin from the viewpoint of film viscosity, flexibility, etc. .
（A）成分可以含有軟化點為40℃以下之環氧樹脂（或在30℃下為液狀之環氧樹脂，以下，有時稱為“（A1）成分”。）。亦即，（A）成分可以為（A1）成分與軟化點超過40℃之環氧樹脂（或在30℃下為固體狀之環氧樹脂，以下，有時稱為“（A2）成分”。）的組合。藉由（A）成分含有（A1）成分，具有能夠提高固化後的儲存彈性模數，從而提高導線接合性之傾向。又，藉由（A）成分為（A1）成分與（A2）成分的組合，具有薄膜塗佈性更優異的傾向。The component (A) may contain an epoxy resin having a softening point of 40° C. or lower (or a liquid epoxy resin at 30° C., hereinafter, may be referred to as “component (A1)”). That is, component (A) may be component (A1) and an epoxy resin having a softening point exceeding 40°C (or an epoxy resin that is solid at 30°C, hereinafter, may be referred to as "component (A2)"). )The combination. When (A) component contains (A1) component, it exists in the tendency which can improve the storage elastic modulus after hardening, and can improve wire bonding property. Moreover, since (A) component is a combination of (A1) component and (A2) component, it exists in the tendency which becomes more excellent in film applicability.
另外，在本說明書中，軟化點係指按照JIS K7234，藉由環球法測量之值。In addition, in this specification, a softening point means the value measured by the ring and ball method based on JISK7234.
作為（A1）成分的市售品，例如可舉出EXA-830CRP（商品名，DIC Corporation製造，在30℃下為液狀）、YDF-8170C（商品名，NIPPON STEEL Chemical & Material Co., Ltd.製造，在30℃下為液狀）、EP-4088S（商品名，ADEKA CORPORATION製造，在30℃下為液狀）等。Examples of commercially available components of (A1) include EXA-830CRP (trade name, manufactured by DIC Corporation, liquid at 30° C.), YDF-8170C (trade name, NIPPON STEEL Chemical & Material Co., Ltd. .manufactured, liquid at 30°C), EP-4088S (trade name, manufactured by ADEKA CORPORATION, liquid at 30°C), etc.
在（A）成分為（A1）成分與（A2）成分的組合之情況下，以（A）成分的總質量為基準，（A1）成分的含量可以為5質量%以上、10質量%以上或15質量%以上，且可以為80質量%以下、70質量%以下或65質量%以下。另外，膜狀接著劑中的（A）成分中的（A1）成分的含量可以與上述範圍相同。When component (A) is a combination of component (A1) and component (A2), the content of component (A1) may be 5% by mass or more, 10% by mass or more, based on the total mass of component (A) 15% by mass or more, and may be 80% by mass or less, 70% by mass or less, or 65% by mass or less. Moreover, content of (A1) component in (A) component in a film adhesive agent may be the same as the said range.
在（A）成分為（A1）成分與（A2）成分的組合之情況下，以（A）成分的總質量為基準，（A2）成分的含量可以為20質量%以上、30質量%以上或35質量%以上，且可以為95質量%以下、90質量%以下或85質量%以下。另外，膜狀接著劑中的（A）成分中的（A2）成分的含量可以與上述範圍相同。When component (A) is a combination of component (A1) and component (A2), the content of component (A2) may be 20% by mass or more, 30% by mass or more, based on the total mass of component (A) 35 mass % or more, and may be 95 mass % or less, 90 mass % or less, or 85 mass % or less. Moreover, content of (A2) component in (A) component in a film adhesive agent may be the same as the said range.
（A）成分的環氧當量沒有特別限制，可以為90～300g/eq或110～290g/eq。當（A）成分的環氧當量在這樣的範圍內時，具有維持膜狀接著劑的體積強度的同時容易確保形成膜狀接著劑時的接著劑組成物的流動性之傾向。(A) The epoxy equivalent of the component is not particularly limited, and may be 90 to 300 g/eq or 110 to 290 g/eq. When the epoxy equivalent of the component (A) is within such a range, the fluidity of the adhesive composition when the film adhesive is formed tends to be easily ensured while maintaining the bulk strength of the film adhesive.
（B1）成分：軟化點為90℃以上之第1固化劑 （B2）成分：軟化點小於90℃之第2固化劑 （B1）成分及（B2）成分可以為作為（A）成分的固化劑發揮作用之成分，亦即環氧樹脂固化劑。藉由接著劑組成物含有（B1）成分，接著劑組成物高交聯化，能夠提高固化後的儲存彈性模數，從而提高導線接合性。另一方面，藉由接著劑組成物含有（B2）成分，在形成膜狀接著劑時能夠賦予柔軟性，並且能夠提高支撐構件的表面或半導體元件的表面的凹凸埋入性。又，藉由接著劑組成物含有（B2）成分，與（A）成分的反應率提高，因此減少固化收縮，能夠提高半導體裝置的可靠性。 (B1) Component: The first curing agent with a softening point of 90°C or higher (B2) Component: The second curing agent with a softening point of less than 90°C (B1) component and (B2) component may be a component functioning as a curing agent of (A) component, that is, an epoxy resin curing agent. When the adhesive composition contains the component (B1), the adhesive composition becomes highly cross-linked, the storage elastic modulus after curing can be increased, and the wire bonding property can be improved. On the other hand, when the adhesive composition contains the component (B2), flexibility can be imparted when forming a film-like adhesive, and the embedding property of irregularities on the surface of the support member or the surface of the semiconductor element can be improved. Moreover, since the reaction rate with (A) component improves by containing (B2) component in an adhesive composition, curing shrinkage can be reduced and the reliability of a semiconductor device can be improved.
（B1）成分及（B2）成分可以均為酚醛樹脂。只要在分子內具有酚性羥基，則酚醛樹脂能夠依據軟化點，用作（B1）成分或（B2）成分。作為酚醛樹脂，例如可舉出將苯酚、甲酚、間苯二酚、鄰苯二酚、雙酚A、雙酚F、苯基苯酚、胺基苯酚等酚類及/或α-萘酚、β-萘酚、二羥基萘等萘酚類與甲醛等具有醛基之化合物在酸性觸媒下進行縮合或共縮合而得到之酚醛清漆型酚醛樹脂、由烯丙基化雙酚A、烯丙基化雙酚F、烯丙基化萘二醇、苯酚酚醛清漆、苯酚等酚類及/或萘酚類與二甲氧基對二甲苯或雙（甲氧基甲基）聯苯合成之苯酚芳烷基樹脂、萘酚芳烷基樹脂、聯苯芳烷基型酚醛樹脂、苯基芳烷基型酚醛樹脂等。該等亦可以單獨使用一種或組合兩種以上來使用。該等之中，酚醛樹脂亦可以含有酚醛清漆型酚醛樹脂或苯基芳烷基型酚醛樹脂。Both (B1) component and (B2) component may be a phenolic resin. As long as it has a phenolic hydroxyl group in a molecule|numerator, a phenolic resin can be used as (B1) component or (B2) component according to a softening point. Examples of the phenolic resin include phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol, and/or α-naphthol, Novolac type phenolic resin obtained by condensation or co-condensation of naphthols such as β-naphthol and dihydroxynaphthalene and compounds with aldehyde groups such as formaldehyde under an acidic catalyst, and allylated bisphenol A, allyl Phenol synthesized from alkylated bisphenol F, allylated naphthalene diol, phenol novolak, phenol and/or naphthols and dimethoxy-p-xylene or bis(methoxymethyl)biphenyl Aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl-type phenolic resins, phenylaralkyl-type phenolic resins, etc. These can also be used individually by 1 type or in combination of 2 or more types. Among these, the phenolic resin may contain a novolak type phenolic resin or a phenylaralkyl type phenolic resin.
酚醛樹脂的羥基當量亦可以為70g/eq以上或70～300g/eq。當酚醛樹脂的羥基當量為70g/eq以上時，具有儲存彈性模數進一步提高之傾向，當其為300g/eq以下時，能夠防止由發泡、釋氣等的產生引起之不良情況。The hydroxyl equivalent of the phenol resin may be 70 g/eq or more or 70 to 300 g/eq. When the hydroxyl equivalent of the phenolic resin is 70 g/eq or more, the storage elastic modulus tends to be further increased, and when it is 300 g/eq or less, defects caused by foaming, outgassing, etc. can be prevented.
（B1）成分可以為軟化點為90℃以上之酚醛樹脂，亦可以將這樣的酚醛樹脂單獨使用一種或組合兩種以上來使用。（B1）成分的軟化點為90℃以上，亦可以為95℃以上、100℃以上、105℃以上、110℃以上或115℃以上。（B1）成分的軟化點的上限例如可以為200℃以下。The component (B1) may be a phenol resin having a softening point of 90° C. or higher, and such phenol resins may be used alone or in combination of two or more. The softening point of the component (B1) is 90°C or higher, and may be 95°C or higher, 100°C or higher, 105°C or higher, 110°C or higher, or 115°C or higher. (B1) The upper limit of the softening point of a component may be 200 degreeC or less, for example.
作為（B1）成分的市售品，例如可舉出PSM-4326（商品名，Gunei Chemical Industry Co., Ltd.製造，軟化點：120℃）、J-DPP-140（商品名，JFE Chemical Corporation製造，軟化點：140℃）、GPH-103（商品名，Nippon Kayaku Co., Ltd.製造，軟化點：99～106℃）等。Examples of commercially available products of the component (B1) include PSM-4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., softening point: 120° C.), J-DPP-140 (trade name, JFE Chemical Corporation manufactured, softening point: 140°C), GPH-103 (trade name, manufactured by Nippon Kayaku Co., Ltd., softening point: 99 to 106°C), etc.
以（B1）成分及（B2）成分的總質量為基準，（B1）成分的含量可以為20質量%以上、30質量%以上或40質量%以上，且可以為80質量%以下、70質量%以下或60質量%以下。另外，膜狀接著劑中的（B1）成分及（B2）成分中的（B1）成分的含量可以與上述範圍相同。Based on the total mass of (B1) component and (B2) component, the content of (B1) component may be 20 mass % or more, 30 mass % or more, or 40 mass % or more, and may be 80 mass % or less, 70 mass % or less than 60% by mass. In addition, the content of the (B1) component in the film adhesive and the (B1) component in the (B2) component may be the same as the above-mentioned range.
（B2）成分可以為軟化點小於90℃之酚醛樹脂，亦可以將這樣的酚醛樹脂單獨使用一種或組合兩種以上來使用。（B2）成分的軟化點小於90℃，亦可以為85℃以下或80℃以下。（B2）成分的軟化點的下限例如可以為20℃以上。The component (B2) may be a phenolic resin having a softening point of less than 90° C., and such phenolic resins may be used alone or in combination of two or more. (B2) The softening point of a component is less than 90 degreeC, and may be 85 degreeC or less or 80 degreeC or less. The lower limit of the softening point of the component (B2) may be, for example, 20° C. or higher.
（B1）成分的軟化點與（B2）成分的軟化點之差可以為10℃以上。藉由使用這樣的（B1）成分及（B2）成分的組合，具有能夠兼顧固化前的低黏度化與固化後的高彈性化之傾向。（B1）成分的軟化點與（B2）成分的軟化點之差亦可以為15℃以上、20℃以上或25℃以上。The difference between the softening point of the component (B1) and the softening point of the component (B2) may be 10° C. or more. By using the combination of such (B1) component and (B2) component, it exists in the tendency for both low viscosity before hardening and high elasticity after hardening to be compatible. The difference between the softening point of the component (B1) and the softening point of the component (B2) may be 15° C. or higher, 20° C. or higher, or 25° C. or higher.
作為（B2）成分的市售品，例如可舉出MEH-7800M（商品名，MEIWA PLASTIC INDUSTRIES,LTD.製造，軟化點：80℃）、J-DPP-85（商品名，JFE Chemical Corporation製造，軟化點：85℃）、MEH-5100-5S（商品名，MEIWA PLASTIC INDUSTRIES,LTD.製造，軟化點：65℃）等。Examples of commercially available products of the component (B2) include MEH-7800M (trade name, manufactured by MEIWA PLASTIC INDUSTRIES, LTD., softening point: 80° C.), J-DPP-85 (trade name, manufactured by JFE Chemical Corporation, Softening point: 85°C), MEH-5100-5S (trade name, manufactured by MEIWA PLASTIC INDUSTRIES, LTD., softening point: 65°C), etc.
以（B1）成分及（B2）成分的總質量為基準，（B2）成分的含量可以為20質量%以上、30質量%以上或40質量%以上，且可以為80質量%以下、70質量%以下或60質量%以下。另外，膜狀接著劑中的（B1）成分及（B2）成分中的（B2）成分的含量可以與上述範圍相同。Based on the total mass of components (B1) and (B2), the content of component (B2) may be 20 mass % or more, 30 mass % or more, or 40 mass % or more, and may be 80 mass % or less, 70 mass % or less than 60% by mass. Moreover, content of the (B1) component in a film adhesive agent and (B2) component in (B2) component may be the same as the said range.
在（B1）成分及（B2）成分為酚醛樹脂之情況下，從固化性的觀點而言，（A）成分的環氧當量與（B1）成分及（B2）成分的羥基當量之比（（A）成分的環氧當量/（B1）成分及（B2）成分的羥基當量）可以為0.30/0.70～0.70/0.30、0.35/0.65～0.65/0.35、0.40/0.60～0.60/0.40、或0.45/0.55～0.55/0.45。當該當量比為0.30/0.70以上時，具有得到更充分的固化性之傾向。當該當量比為0.70/0.30以下時，能夠防止黏度變得過高，能夠得到更充分的流動性。When the components (B1) and (B2) are phenolic resins, from the viewpoint of curability, the ratio of the epoxy equivalent of the component (A) to the hydroxyl equivalent of the components (B1) and (B2) (( The epoxy equivalent of component A/the hydroxyl equivalent of component (B1) and component (B2)) can be 0.30/0.70～0.70/0.30, 0.35/0.65～0.65/0.35, 0.40/0.60～0.60/0.40, or 0.45/ 0.55～0.55/0.45. When this equivalent ratio is 0.30/0.70 or more, it exists in the tendency to obtain more sufficient curability. When the equivalent ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.
以接著劑組成物的總質量為基準，（A）成分、（B1）成分及（B2）成分的合計含量可以為20質量%以上，亦可以為25質量%以上或30質量%以上。當（A）成分、（B1）成分及（B2）成分的合計含量在這樣的範圍內時，具有能夠兼顧固化前的低黏度化與固化後的高彈性化之傾向。從操作性的觀點而言，以接著劑組成物的總質量為基準，（A）成分、（B1）成分及（B2）成分的合計含量可以為80質量%以下、70質量%以下、60質量%以下、55質量%以下或50質量%以下。另外，膜狀接著劑中的（A）成分、（B1）成分及（B2）成分的合計含量可以與上述範圍相同。Based on the total mass of the adhesive composition, the total content of the (A) component, (B1) component, and (B2) component may be 20% by mass or more, 25% by mass or more, or 30% by mass or more. When the total content of (A) component, (B1) component, and (B2) component is in such a range, it exists in the tendency for both low viscosity before hardening and high elasticity after hardening to be compatible. From the viewpoint of workability, the total content of (A) component, (B1) component, and (B2) component may be 80% by mass or less, 70% by mass or less, or 60% by mass based on the total mass of the adhesive composition. % or less, 55 mass % or less, or 50 mass % or less. Moreover, the total content of (A) component, (B1) component, and (B2) component in a film adhesive agent may be the same as the said range.
（C）成分：彈性體 作為（C）成分，例如可舉出丙烯酸樹脂、聚酯樹脂、聚醯胺樹脂、聚醯亞胺樹脂、矽酮樹脂、丁二烯樹脂；該等樹脂的改質體等。該等亦可以單獨使用一種或組合兩種以上來使用。該等之中，（C）成分由於離子性雜質少且耐熱性更優異，更容易確保半導體裝置的連接可靠性，流動性更優異，因此亦可以為具有來自於（甲基）丙烯酸酯之構成單元作為主成分的丙烯酸樹脂（丙烯酸橡膠）。以構成單元總量為基準，（C）成分中的來自於（甲基）丙烯酸酯之構成單元的含量例如可以為70質量%以上、80質量%以上或90質量%以上。丙烯酸樹脂（丙烯酸橡膠）可以含有來自於具有環氧基、醇性羥基或酚性羥基、羧基等交聯性官能基之（甲基）丙烯酸酯之構成單元。 (C) Component: Elastomer Examples of the component (C) include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins; modified products of these resins, and the like. These can also be used individually by 1 type or in combination of 2 or more types. Among these, component (C) may have a composition derived from (meth)acrylate because it has less ionic impurities and is more excellent in heat resistance, which makes it easier to ensure connection reliability of semiconductor devices and has better fluidity. The unit is an acrylic resin (acrylic rubber) as the main component. Based on the total amount of the structural units, the content of the structural units derived from (meth)acrylate in the component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more. The acrylic resin (acrylic rubber) may contain a structural unit derived from a (meth)acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.
（C）成分的玻璃轉移溫度（Tg）可以為5℃以上，亦可以為10℃以上。當（C）成分的Tg為5℃以上時，能夠進一步提高接著劑組成物的接著強度，進而具有能夠防止膜狀接著劑的柔軟性變得過高之傾向。藉此，在晶圓切割時容易切斷膜狀接著劑，能夠防止產生毛邊。（C）成分的Tg的上限沒有特別限制，例如可以為55℃以下、50℃以下、45℃以下、40℃以下、35℃以下、30℃以下或25℃以下。當（C）成分的Tg為55℃以下時，具有能夠抑制膜狀接著劑的柔軟性下降之傾向。藉此，在將膜狀接著劑貼附於半導體晶圓上時，具有容易充分地埋入空隙之傾向。又，能夠防止由於與半導體晶圓的密接性下降而導致的切割時的崩裂。在此，玻璃轉移溫度（Tg）係指使用DSC（熱示差掃描量熱儀）（例如，Rigaku Corporation製造，Thermo Plus 2）進行測量而得之值。藉由調整構成（C）成分之構成單元（在（C）成分為丙烯酸樹脂（丙烯酸橡膠）之情況下，來自於（甲基）丙烯酸酯之構成單元）的種類及含量，能夠將（C）成分的Tg調整到所期望的範圍。(C) The glass transition temperature (Tg) of a component may be 5 degreeC or more, and may be 10 degreeC or more. When the Tg of the component (C) is 5° C. or higher, the adhesive strength of the adhesive composition can be further increased, and it tends to prevent the flexibility of the film adhesive from becoming too high. This makes it easy to cut the film-like adhesive at the time of wafer dicing, and prevents the generation of burrs. The upper limit of Tg of the component (C) is not particularly limited, and may be, for example, 55°C or lower, 50°C or lower, 45°C or lower, 40°C or lower, 35°C or lower, 30°C or lower, or 25°C or lower. When Tg of (C) component is 55 degreeC or less, there exists a tendency for the flexibility fall of a film-form adhesive agent to be suppressed. Thereby, when attaching a film-form adhesive agent to a semiconductor wafer, it exists in the tendency which fully fills a void easily. In addition, it is possible to prevent chipping during dicing due to a decrease in adhesion to the semiconductor wafer. Here, the glass transition temperature (Tg) refers to a value measured using a DSC (Differential Scanning Calorimeter) (for example, manufactured by Rigaku Corporation, Thermo Plus 2). By adjusting the type and content of the structural unit constituting the (C) component (in the case of the (C) component being an acrylic resin (acrylic rubber), a structural unit derived from (meth)acrylate), the (C) can be The Tg of the ingredients are adjusted to the desired range.
（C）成分的重量平均分子量（Mw）可以為10萬以上、30萬以上或50萬以上，並且可以為300萬以下、200萬以下或100萬以下。當（C）成分的Mw在這樣的範圍內時，能夠適當地控制薄膜形成性、薄膜強度、撓性、黏性等，並且迴焊（reflow）性優異，能夠提高埋入性。在此，Mw係指利用凝膠滲透層析法（GPC）進行測量，使用基於標準聚苯乙烯之校準曲線換算而得之值。另外，在GPC中觀測到複數個峰之情況下，將起因於峰強度最高的峰之重量平均分子量定義為本說明書中的重量平均分子量。(C) The weight average molecular weight (Mw) of a component may be 100,000 or more, 300,000 or more, or 500,000 or more, and may be 3 million or less, 2 million or less, or 1 million or less. When Mw of the component (C) is within such a range, film formability, film strength, flexibility, viscosity, etc. can be appropriately controlled, reflow property is excellent, and embedding property can be improved. Here, Mw is measured by gel permeation chromatography (GPC), and is a value converted using a calibration curve based on standard polystyrene. Moreover, when several peaks are observed by GPC, the weight average molecular weight attributable to the peak with the highest peak intensity is defined as the weight average molecular weight in this specification.
作為（C）成分的市售品，可舉出SG-P3、SG-80H（均為Nagase ChemteX Corporation製造）、KH-CT-865（Showa Denko Materials co., Ltd.製造）等。As a commercial item of (C)component, SG-P3, SG-80H (all are manufactured by Nagase ChemteX Corporation), KH-CT-865 (made by Showa Denko Materials Co., Ltd.) etc. are mentioned.
以接著劑組成物的總質量為基準，（C）成分的含量為22～45質量%。以接著劑組成物的總質量為基準，當（C）成分的含量為22質量%以上時，具有薄膜塗佈性優異，並且凹凸埋入性優異的傾向。以接著劑組成物的總質量為基準，（C）成分的含量亦可以為25質量%以上或28質量%以上。以接著劑組成物的總質量為基準，當（C）成分的含量為45質量%以下時，具有能夠兼顧凹凸埋入性與導線接合性（能夠兼顧固化前的低黏度化與固化後的高彈性化）之傾向，進而具有能夠充分地確保（A）成分的含量且能夠與其他特性兼顧之傾向。以接著劑組成物的總質量為基準，（C）成分的含量亦可以為44質量%以下、42質量%以下、40質量%以下、38質量%以下、35質量%以下或32質量%以下。另外，膜狀接著劑中的（C）成分的含量可以與上述範圍相同。Based on the total mass of the adhesive composition, the content of the component (C) is 22 to 45% by mass. When the content of the component (C) is 22% by mass or more based on the total mass of the adhesive composition, it tends to be excellent in thin film applicability and embedding of unevenness. Based on the total mass of the adhesive composition, the content of the component (C) may be 25 mass % or more or 28 mass % or more. Based on the total mass of the adhesive composition, when the content of the component (C) is 45% by mass or less, it is possible to achieve both uneven embedding and wire bonding properties (low viscosity before curing and high viscosity after curing). Elasticity), and furthermore, there is a tendency that the content of (A) component can be sufficiently ensured and can be balanced with other properties. Based on the total mass of the adhesive composition, the content of component (C) may be 44% by mass or less, 42% by mass or less, 40% by mass or less, 38% by mass or less, 35% by mass or less, or 32% by mass or less. In addition, content of the (C)component in a film adhesive agent may be the same as the said range.
（D）成分：無機填料 作為（D）成分，例如可舉出氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、二氧化矽等。該等亦可以單獨使用一種或組合兩種以上來使用。該等之中，從調整熔融黏度的觀點而言，（D）成分亦可以為二氧化矽。（D）成分的形狀沒有特別限制，可以為球狀。 (D) Component: Inorganic filler Examples of the component (D) include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, Boron nitride, silicon dioxide, etc. These can also be used individually by 1 type or in combination of 2 or more types. Among them, the component (D) may be silica from the viewpoint of adjusting the melt viscosity. (D) The shape of the component is not particularly limited, and may be spherical.
從流動性及儲存彈性模數的觀點而言，（D）成分的平均粒徑可以為0.7μm以下，亦可以為0.6μm以下、0.5μm以下、0.4μm以下或0.3μm以下。（D）成分的平均粒徑例如可以為0.01μm以上。在此，平均粒徑係指藉由依據BET比表面積換算而求出之值。The average particle size of the component (D) may be 0.7 μm or less, 0.6 μm or less, 0.5 μm or less, 0.4 μm or less, or 0.3 μm or less from the viewpoint of fluidity and storage elastic modulus. (D) The average particle diameter of a component may be 0.01 micrometer or more, for example. Here, the average particle diameter refers to a value obtained by conversion based on the BET specific surface area.
以接著劑組成物的總質量為基準，（D）成分的含量可以小於50質量%，亦可以為45質量%以下或40質量%以下。當（D）成分的含量在這樣的範圍內時，具有薄膜塗佈性更優異的傾向。以接著劑組成物的總質量為基準，（D）成分的含量可以為1質量%以上、5質量%以上、10質量%以上、15質量%以上或20質量%以上。另外，膜狀接著劑中的（D）成分的含量可以與上述範圍相同。Based on the total mass of the adhesive composition, the content of the component (D) may be less than 50% by mass, or may be 45% by mass or less or less than 40% by mass. When the content of the component (D) is within such a range, it tends to be more excellent in film applicability. Based on the total mass of the adhesive composition, the content of the component (D) may be 1% by mass or more, 5% by mass or more, 10% by mass or more, 15% by mass or more, or 20% by mass or more. Moreover, content of (D)component in a film-form adhesive agent may be the same as the said range.
（E）成分：偶合劑 （E）成分亦可以為矽烷偶合劑。作為矽烷偶合劑，例如可舉出γ-脲基丙基三乙氧基矽烷、γ-巰基丙基三甲氧基矽烷、3-苯基胺基丙基三甲氧基矽烷、3-（2-胺乙基）胺基丙基三甲氧基矽烷等。該等亦可以單獨使用一種或組合兩種以上來使用。 (E) Component: coupling agent (E) The component may be a silane coupling agent. Examples of silane coupling agents include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-amine Ethyl) aminopropyl trimethoxysilane, etc. These can also be used individually by 1 type or in combination of 2 or more types.
（F）成分：固化促進劑 作為（F）成分，例如可舉出咪唑類及其衍生物、有機磷系化合物、二級胺類、三級胺類、四級銨鹽等。該等亦可以單獨使用一種或組合兩種以上來使用。該等之中，從反應性的觀點而言，（F）成分亦可以為咪唑類及其衍生物。 (F) Component: curing accelerator As (F) component, imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. are mentioned, for example. These can also be used individually by 1 type or in combination of 2 or more types. Among these, the (F) component may be imidazoles and derivatives thereof from the viewpoint of reactivity.
作為咪唑類，例如可舉出2-甲基咪唑、1-芐基-2-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑等。該等亦可以單獨使用一種或組合兩種以上來使用。Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole Wait. These can also be used individually by 1 type or in combination of 2 or more types.
接著劑組成物還可以含有其他成分。作為其他成分，例如可舉出顏料、離子捕捉劑、抗氧化劑等。The adhesive composition may further contain other components. As other components, a pigment, an ion scavenger, an antioxidant, etc. are mentioned, for example.
以接著劑組成物的總質量為基準，（E）成分、（F）成分及其他成分的合計含量可以為0.1質量%以上、0.3質量%以上或0.5質量%以上，亦可以為30質量%以下、20質量%以下、10質量%以下或5質量%以下。另外，膜狀接著劑中的（E）成分、（F）成分及其他成分的合計含量可以與上述範圍相同。Based on the total mass of the adhesive composition, the total content of (E) component, (F) component and other components may be 0.1 mass % or more, 0.3 mass % or more, or 0.5 mass % or more, or 30 mass % or less , 20% by mass or less, 10% by mass or less, or 5% by mass or less. Moreover, the total content of (E) component, (F) component, and other components in a film adhesive agent may be the same as the said range.
接著劑組成物（膜狀接著劑）的120℃下的剪切黏度可以為20000Pa・s以下、18000Pa・s以下、17000Pa・s以下、15000Pa・s以下、13000Pa・s以下、12000Pa・s以下、10000Pa・s以下、8000Pa・s以下或8000Pa・s以下。當該剪切黏度為20000Pa・s以下時，具有支撐構件的表面或半導體元件的表面的凹凸埋入性更優異的傾向。接著劑組成物（膜狀接著劑）的120℃下的剪切黏度的下限沒有特別限制，例如，可以為500Pa・s以上、1000Pa・s以上、1200Pa・s以上或1500Pa・s以上。當該剪切黏度為500Pa・s以上時，在將半導體元件壓接於支撐構件時，具有能夠更充分地防止膜狀接著劑被壓壞而損傷半導體元件之傾向。另外，在本說明書中，接著劑組成物（膜狀接著劑）的120℃下的剪切黏度能夠藉由例如實施例中記載之方法來測量。The shear viscosity at 120°C of the adhesive composition (film adhesive) may be 20000Pa·s or less, 18000Pa·s or less, 17000Pa·s or less, 15000Pa·s or less, 13000Pa·s or less, 12000Pa·s or less, 10000Pa・s or less, 8000Pa・s or less or 8000Pa・s or less. When the shear viscosity is 20000 Pa·s or less, there is a tendency for the surface of the support member or the surface of the semiconductor element to be more excellent in embedding of unevenness. The lower limit of the shear viscosity at 120° C. of the adhesive composition (film adhesive) is not particularly limited, and may be, for example, 500 Pa·s or higher, 1000 Pa·s or higher, 1200 Pa·s or higher, or 1500 Pa·s or higher. When the shear viscosity is 500 Pa·s or more, when the semiconductor element is pressure-bonded to the supporting member, it tends to be able to more sufficiently prevent the film adhesive from being crushed and damaging the semiconductor element. In addition, in this specification, the shear viscosity at 120 degreeC of an adhesive composition (film adhesive) can be measured by the method as described in an Example, for example.
接著劑組成物（膜狀接著劑）在以170℃、1小時的條件固化後的150℃下的儲存彈性模數可以為23MPa以上。當該儲存彈性模數為23MPa以上時，能夠抑制在導線接合時產生不良情況，具有導線接合性更優異的傾向。該儲存彈性模數亦可以為25MPa以上、30MPa以上、35MPa以上、40MPa以上、45MPa以上或50MPa以上。接著劑組成物（膜狀接著劑）在以170℃、1小時的條件固化後的150℃下的儲存彈性模數的上限沒有特別限制，例如，可以為2000MPa以下、1500MPa以下、1000MPa以下、700MPa以下、500MPa以下、300MPa以下、150MPa以下或100MPa以下。當該儲存彈性模數為2000MPa以下時，薄膜塗佈性進一步提高，具有在膜狀接著劑的固化物中能夠更充分地抑制變得過硬之傾向。另外，在本說明書中，接著劑組成物（膜狀接著劑）的固化後的150℃下的儲存彈性模數能夠藉由例如實施例中記載之方法來測量。The storage elastic modulus of the adhesive composition (film adhesive) at 150° C. after being cured at 170° C. for 1 hour may be 23 MPa or more. When the storage elastic modulus is 23 MPa or more, it is possible to suppress occurrence of problems during wire bonding, and the wire bonding property tends to be more excellent. The storage elastic modulus may be 25 MPa or more, 30 MPa or more, 35 MPa or more, 40 MPa or more, 45 MPa or more, or 50 MPa or more. The upper limit of the storage elastic modulus of the adhesive composition (film adhesive) at 150°C after being cured at 170°C for 1 hour is not particularly limited, for example, it can be 2000MPa or less, 1500MPa or less, 1000MPa or less, 700MPa Below, below 500MPa, below 300MPa, below 150MPa or below 100MPa. When this storage elastic modulus is 2000 MPa or less, film applicability improves further, and it exists in the tendency which becomes more fully suppressed in the hardened|cured material of a film adhesive agent. In addition, in this specification, the storage elastic modulus in 150 degreeC after hardening of an adhesive composition (film adhesive agent) can be measured by the method as described in an Example, for example.
[膜狀接著劑]
圖1係表示膜狀接著劑的一實施形態之示意剖面圖。圖1所示之膜狀接著劑1（接著劑膜）係將上述接著劑組成物成形為膜狀而成。膜狀接著劑1亦可以為半固化（B階段）狀態，在固化處理後能夠成為完全固化（C階段）狀態。這樣的膜狀接著劑1能夠藉由將接著劑組成物塗佈於支撐膜上而形成。在膜狀接著劑1的形成中，亦可以使用接著劑組成物的清漆（接著劑清漆）。在使用接著劑清漆之情況下，將（A）成分、（B1）成分、（B2）成分及（C）成分、以及依據需要添加之成分在溶劑中混合或混煉而製備接著劑清漆，將所得到之接著劑清漆塗佈於支撐膜上，加熱乾燥而去除溶劑，藉此能夠得到膜狀接著劑1。
[film adhesive]
Fig. 1 is a schematic cross-sectional view showing one embodiment of a film adhesive. The film-like adhesive 1 (adhesive film) shown in FIG. 1 is obtained by molding the above-mentioned adhesive composition into a film. The
支撐膜只要是能夠經受上述加熱乾燥之膜，則沒有特別限定，例如可以為聚酯膜、聚丙烯膜、聚對苯二甲酸乙二酯膜、聚醯亞胺膜、聚醚醯亞胺膜、聚萘二甲酸乙二酯膜、聚甲基戊烯膜等。支撐膜可以為組合兩種以上而成之多層膜，亦可以為表面被矽酮系、二氧化矽系等脫模劑等處理而成之基材。支撐膜的厚度例如可以為10～200μm或20～170μm。The support film is not particularly limited as long as it can withstand the above-mentioned heat drying, for example, polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film , polyethylene naphthalate film, polymethylpentene film, etc. The support film can be a multi-layer film formed by combining two or more types, or it can be a base material whose surface is treated with a silicone-based, silicon dioxide-based or other release agent. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.
混合或混煉使用通常的攪拌機、擂潰機、三輥機、球磨機等分散機，能夠適當組合它們來進行。Mixing or kneading can be carried out using a usual dispersing machine such as a mixer, a grinder, a three-roll mill, or a ball mill, which can be appropriately combined.
用於製備接著劑清漆之溶劑只要是能夠均勻地溶解、混煉或分散各成分者，則沒有限制，能夠使用以往公知的溶劑。作為這樣的溶劑，例如可舉出丙酮、甲基乙基酮、甲基異丁基酮、環己酮等酮系溶劑、二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、甲苯、二甲苯等。從乾燥速度及價格的觀點而言，溶劑可以為甲基乙基酮或環己酮。The solvent used to prepare the adhesive varnish is not limited as long as it can dissolve, knead or disperse the components uniformly, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methyl Pyrrolidone, toluene, xylene, etc. From the viewpoint of drying speed and price, the solvent may be methyl ethyl ketone or cyclohexanone.
作為將接著劑清漆塗佈於支撐膜之方法，能夠使用公知的方法，例如能夠使用刮刀塗佈法、輥塗法、噴塗法、凹版塗佈法、棒塗法及簾式塗佈法等。加熱乾燥條件只要係所使用之溶劑充分地揮發之條件，則沒有特別限制，可以為在50～150℃下1～30分鐘。As a method of applying the adhesive varnish to the support film, known methods can be used, for example, a knife coater, a roll coater, a spray coater, a gravure coater, a bar coater, and a curtain coater can be used. The heating and drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized, and may be at 50 to 150° C. for 1 to 30 minutes.
由於上述接著劑組成物的薄膜塗佈性優異，因此能夠形成薄膜的膜狀接著劑。膜狀接著劑的厚度可以為30μm以下、25μm以下、20μm以下、18μm以下、15μm以下、12μm以下、10μm以下、8μm以下或7μm以下。膜狀接著劑的厚度的下限沒有特別限制，例如可以為1μm以上。Since the above-mentioned adhesive composition is excellent in thin-film applicability, it can form a film-like adhesive of a thin film. The thickness of the film adhesive may be 30 μm or less, 25 μm or less, 20 μm or less, 18 μm or less, 15 μm or less, 12 μm or less, 10 μm or less, 8 μm or less, or 7 μm or less. The lower limit of the thickness of the film adhesive is not particularly limited, and may be, for example, 1 μm or more.
從防止損傷或污染之觀點而言，在支撐膜上製作之膜狀接著劑亦可以在膜狀接著劑的與支撐膜相反的一側的面具備覆蓋膜。作為覆蓋膜，例如可舉出聚乙烯膜、聚丙烯膜、表面剝離劑處理膜等。覆蓋膜的厚度例如可以為15～200μm或30～170μm。From the viewpoint of preventing damage or contamination, the film adhesive formed on the support film may be provided with a cover film on the surface of the film adhesive opposite to the support film. As a cover film, a polyethylene film, a polypropylene film, a surface release agent-treated film, etc. are mentioned, for example. The thickness of the cover film may be, for example, 15 to 200 μm or 30 to 170 μm.
由於膜狀接著劑能夠實現薄膜化，因此能夠較佳地用於將複數個半導體元件積層而成之半導體裝置的製造製程。在該情況下，半導體裝置可以為層疊式MCP，亦可以為三維NAND型記憶體。Since the film-like adhesive can be thinned, it can be preferably used in the manufacturing process of a semiconductor device in which a plurality of semiconductor elements are laminated. In this case, the semiconductor device may be a stacked MCP or a three-dimensional NAND memory.
[切割晶粒接合一體型膜]
圖2係表示切割晶粒接合一體型膜的一實施形態之示意剖面圖。圖2所示之切割晶粒接合一體型膜10依序具備基材層2、黏著劑層3及由上述接著劑組成物形成之接著劑層1A。接著劑層1A可以為膜狀接著劑1。基材層2及黏著劑層3可以為切割帶4。當使用這樣的切割晶粒接合一體型膜10時，對半導體晶圓的層壓步驟為1次，因此能夠實現作業的效率化。切割晶粒接合一體型膜亦可以為膜狀、片狀、帶狀等。
[Saw Die Bonding Integrated Film]
FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing die-bonding integrated film. The dicing die bonding integrated
切割帶4具備基材層2及設置於基材層2上之黏著劑層3。The dicing
作為基材層2，例如可舉出聚四氟乙烯膜、聚對苯二甲酸乙二酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚醯亞胺膜等塑膠膜等。該等基材層2亦可以依據需要已進行底漆塗佈、UV處理、電暈放電處理、研磨處理、蝕刻處理等表面處理。Examples of the
黏著劑層3為由黏著劑形成之層。黏著劑只要在切割時具有半導體元件不飛散之充分的黏著力，在其後半導體元件的拾取步驟中具有不損傷半導體元件之程度的低黏著力，則沒有特別限制，能夠在切晶帶的領域中使用以往公知的黏著劑層。黏著劑亦可以為感壓型或放射線固化型中的任一種。感壓型黏著劑為在短時間的加壓下顯示恆定的黏著性之黏著劑。另一方面，放射線固化型黏著劑為具有藉由放射線（例如，紫外線）的照射而黏著性下降之性質之黏著劑。The
從經濟性及膜的操作性的觀點而言，切割帶4（基材層2及黏著劑層3）的厚度可以為60～150μm或70～130μm。The thickness of the dicing tape 4 (
切割晶粒接合一體型膜10例如能夠藉由準備膜狀接著劑1及切割帶4，將膜狀接著劑1與切割帶4的黏著劑層3貼合而得到。又，切割晶粒接合一體型膜10例如亦能夠藉由準備切割帶4，與形成上述膜狀接著劑1之方法同樣地，在切割帶4的黏著劑層3上塗佈接著劑組成物（接著劑清漆）而得到。The dicing die bonding integrated
在將膜狀接著劑1與切割帶4的黏著劑層3貼合之情況下，切割晶粒接合一體型膜10能夠藉由使用輥層合機、真空層合機等在特定條件（例如，室溫（20℃）或加熱狀態）下將膜狀接著劑1層合於切割帶4上而形成。切割晶粒接合一體型膜10能夠連續地製造，效率優異，因此亦可以在加熱狀態下使用輥層合機來形成。In the case where the
膜狀接著劑及切割晶粒接合一體型膜可以用於半導體裝置的製造製程，亦可以用於將複數個半導體元件積層而成之半導體裝置的製造製程。Film-like adhesives and dicing die-bonding integrated films can be used in the manufacturing process of semiconductor devices, and can also be used in the manufacturing process of semiconductor devices formed by laminating a plurality of semiconductor elements.
膜狀接著劑在作為將複數個半導體元件積層而成之半導體裝置之層疊式MCP（例如，三維NAND型記憶體）中，亦能夠較佳地用作用於接著半導體元件彼此的接著劑。The film adhesive can also be suitably used as an adhesive for bonding semiconductor elements in a stacked MCP (for example, a three-dimensional NAND memory) which is a semiconductor device in which a plurality of semiconductor elements are laminated.
膜狀接著劑例如亦能夠用作保護倒裝晶片型半導體裝置之半導體元件背面之保護片、密封倒裝晶片型半導體裝置之半導體元件表面與被接著體之間的密封片等。The film adhesive can also be used, for example, as a protective sheet for protecting the back surface of a semiconductor element of a flip-chip semiconductor device, a sealing sheet for sealing between the surface of a semiconductor element of a flip-chip semiconductor device and an adherend, and the like.
以下，使用圖式對使用膜狀接著劑及切割晶粒接合一體型膜製造之半導體裝置具體地進行說明。另外，近年來提出了各種結構的半導體裝置，本實施形態的膜狀接著劑及切割晶粒接合一體型膜的用途並不限定於以下說明之結構的半導體裝置。Hereinafter, a semiconductor device manufactured using a film-like adhesive and a dicing die-bonding integrated film will be specifically described using the drawings. In addition, semiconductor devices of various structures have been proposed in recent years, and the application of the film adhesive and dicing die bonding integrated film of the present embodiment is not limited to the semiconductor devices of the structures described below.
[半導體裝置]
圖3係表示半導體裝置的一實施形態之示意剖面圖。圖3所示之半導體裝置100具備半導體元件11、搭載半導體元件11之支撐構件12及接著構件15。接著構件15設置於半導體元件11與支撐構件12之間，接著半導體元件11與支撐構件12。接著構件15為接著劑組成物的固化物（膜狀接著劑的固化物）。半導體元件11的連接端子（未圖示）經由導線13與外部連接端子（未圖示）電連接，並藉由密封材料14密封。
[semiconductor device]
Fig. 3 is a schematic cross-sectional view showing an embodiment of a semiconductor device. The
圖4係表示半導體裝置的另一實施形態之示意剖面圖。在圖4所示之半導體裝置110中，第一層半導體元件11a藉由接著構件15a（接著劑組成物的固化物（膜狀接著劑的固化物））接著於形成有端子16之支撐構件12上，在第一層半導體元件11a上，進而藉由接著構件15b（接著劑組成物的固化物（膜狀接著劑的固化物））接著有第二層半導體元件11b。第一層半導體元件11a及第二層半導體元件11b的連接端子（未圖示）經由導線13與外部連接端子電連接，並藉由密封材料14密封。亦可以說，圖4所示之半導體裝置110在圖3所示之半導體裝置100中還具備積層於半導體元件（11a）的表面上之其他半導體元件（11b）。Fig. 4 is a schematic cross-sectional view showing another embodiment of a semiconductor device. In the
圖5係表示半導體裝置的另一實施形態之示意剖面圖。圖5所示之半導體裝置120具備支撐構件12及積層於支撐構件12上之半導體元件11a、11b、11c、11d。為了與形成於支撐構件12的表面之連接端子（未圖示）的連接，四個半導體元件11a、11b、11c、11d積層於沿橫向（與積層方向正交之方向）彼此錯開之位置（參閱圖5）。半導體元件11a藉由接著構件15a（接著劑組成物的固化物（膜狀接著劑的固化物））接著於支撐構件12上，三個半導體元件11b、11c、11d之間亦分別存在接著構件15b、15c、15d（接著劑組成物的固化物（膜狀接著劑的固化物））。亦可以說，圖5所示之半導體裝置120在圖3所示之半導體裝置100中還具備積層於半導體元件（11a）的表面上之其他半導體元件（11b、11c、11d）。Fig. 5 is a schematic cross-sectional view showing another embodiment of a semiconductor device. A
以上，對本揭示的實施形態詳細地說明了半導體裝置（封裝），但本揭示並不限定於上述實施形態。例如，在圖5中，例示了積層有四個半導體元件之態樣的半導體裝置，但積層之半導體元件的數量並不限定於此。又，在圖5中，例示了半導體元件積層於沿橫向（與積層方向正交之方向）彼此錯開之位置之態樣的半導體裝置，但亦可以為半導體元件積層於沿橫向（與積層方向正交之方向）彼此不錯開之位置之態樣的半導體裝置。As mentioned above, although the semiconductor device (package) was demonstrated in detail about the embodiment of this indication, this indication is not limited to the said embodiment. For example, in FIG. 5 , a semiconductor device in which four semiconductor elements are stacked is illustrated, but the number of stacked semiconductor elements is not limited to this. Also, in FIG. 5 , a semiconductor device in which the semiconductor elements are stacked at positions staggered from each other in the lateral direction (the direction perpendicular to the stacking direction) is illustrated, but the semiconductor elements may also be stacked in the lateral direction (the direction perpendicular to the stacking direction). Intersecting direction) semiconductor devices in the form of positions that are not separated from each other.
[半導體裝置之製造方法] 圖3、圖4及圖5所示之半導體裝置（半導體封裝）能夠藉由以下方法而得到，該方法包括：使上述接著劑組成物介在於半導體元件與支撐構件之間、或半導體元件（第1半導體元件）與半導體元件（第2半導體元件）之間，將半導體元件與支撐構件、或將半導體元件（第1半導體元件）與半導體元件（第2半導體元件）接著之步驟。接著劑組成物例如可以為膜狀接著劑。更具體而言，能夠藉由使上述膜狀接著劑介在於半導體元件與支撐構件之間、或半導體元件（第1半導體元件）與半導體元件（第2半導體元件）之間，將該等加熱壓接將兩者接著，然後依據需要經過導線接合步驟、基於密封材料的密封步驟、包括基於焊接的迴焊之加熱熔融步驟等而得到。 [Manufacturing method of semiconductor device] The semiconductor device (semiconductor package) shown in FIG. 3, FIG. 4 and FIG. 5 can be obtained by the following method, which includes: interposing the above-mentioned adhesive composition between the semiconductor element and the support member, or the semiconductor element (the first 1) between the semiconductor element (second semiconductor element) and the semiconductor element (second semiconductor element), the step of joining the semiconductor element and the support member, or the semiconductor element (the first semiconductor element) and the semiconductor element (the second semiconductor element). The adhesive composition may be, for example, a film-like adhesive. More specifically, by interposing the above-mentioned film-like adhesive between the semiconductor element and the support member, or between the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element), these can be heated and pressed. The two are connected together, and then, if necessary, go through a wire bonding step, a sealing step based on a sealing material, a heating and melting step including reflow based on soldering, and the like.
作為使膜狀接著劑介在於半導體元件與支撐構件之間、或半導體元件（第1半導體元件）與半導體元件（第2半導體元件）之間之方法，如後所述，可以為在預先製作附有接著劑片之半導體元件後，貼附於支撐構件或半導體元件上之方法。As a method of interposing a film-like adhesive between a semiconductor element and a supporting member, or between a semiconductor element (first semiconductor element) and a semiconductor element (second semiconductor element), as described later, it can be made in advance. A method of attaching a semiconductor element with an adhesive tablet to a support member or semiconductor element.
接著，使用圖2所示之切割晶粒接合一體型膜對半導體裝置之製造方法的一實施形態進行說明。另外，基於切割晶粒接合一體型膜的半導體裝置之製造方法並不限定於以下說明之半導體裝置之製造方法。Next, an embodiment of a method of manufacturing a semiconductor device using the dicing die-bonding integrated film shown in FIG. 2 will be described. In addition, the manufacturing method of the semiconductor device by dicing the die-bonding integrated film is not limited to the manufacturing method of the semiconductor device described below.
半導體裝置例如能夠藉由以下方法得到，該方法包括：在上述切割晶粒接合一體型膜的接著劑層上貼附半導體晶圓之步驟（層合步驟）；藉由切斷貼附有接著劑層之半導體晶圓，製作複數個單片化之附有接著劑片之半導體元件之步驟（切割步驟）；及經由接著劑片將附有接著劑片之半導體元件接著於支撐構件上之步驟（第1接著步驟）。半導體裝置之製造方法亦可以還包括經由接著劑片將其他附有接著劑片之半導體元件接著於與支撐構件接著之半導體元件的表面上之步驟（第2接著步驟）。A semiconductor device can be obtained, for example, by a method including: a step of attaching a semiconductor wafer on the adhesive layer of the above-mentioned diced die-bonding integrated film (laminating step); layer semiconductor wafer, the step of manufacturing a plurality of semiconductor elements with adhesive sheets attached to them (dicing step);
層合步驟為將半導體晶圓壓接於切割晶粒接合一體型膜10的接著劑層1A上，將其接著保持並貼附之步驟。本步驟亦可以在利用壓接輥等按壓機構按壓的同時進行。The lamination step is a step of press-bonding the semiconductor wafer onto the
作為半導體晶圓，例如可舉出單晶矽、多晶矽、各種陶瓷、砷化鎵等化合物半導體等。Examples of the semiconductor wafer include single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide, and the like.
切割步驟為進行半導體晶圓的切割之步驟。藉此，能夠將半導體晶圓切斷為特定尺寸，製造複數個單片化之附有接著劑片之半導體元件。切割例如能夠從半導體晶圓的電路面側按照常規方法進行。又，在本步驟中，例如能夠採用到切割帶為止設置切槽之稱為全切割之方式、在半導體晶圓上設置一半切槽，藉由冷卻並拉伸來分割之方式、及藉由雷射分割之方式等。作為在本步驟中使用之切割裝置，沒有特別限定，能夠使用以往公知的裝置。The cutting step is a step of cutting the semiconductor wafer. Thereby, the semiconductor wafer can be cut into a specific size, and a plurality of singulated semiconductor elements with adhesive sheets can be manufactured. Dicing can be performed by a conventional method, for example, from the circuit side of the semiconductor wafer. In addition, in this step, for example, a method called full dicing in which grooves are provided up to the dicing tape, a method in which half grooves are provided on the semiconductor wafer, and the method of dividing by cooling and stretching, and laser cutting can be used. The method of shot division, etc. The cutting device used in this step is not particularly limited, and conventionally known devices can be used.
作為半導體元件（半導體晶片），例如可舉出IC（積體電路）等。作為支撐構件，例如可舉出42合金引線框、銅引線框等引線框；聚醯亞胺樹脂、環氧樹脂等塑膠膜；在玻璃不織布等基材中含浸、固化聚醯亞胺樹脂、環氧樹脂等塑膠而成之改質塑膠膜；氧化鋁等陶瓷等。As a semiconductor element (semiconductor wafer), IC (Integrated Circuit) etc. are mentioned, for example. Examples of supporting members include lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resins and epoxy resins; Modified plastic films made of plastics such as epoxy resins; ceramics such as alumina, etc.
半導體裝置之製造方法依據需要亦可以包括拾取步驟。拾取步驟係為了剝離接著固定於切割晶粒接合一體型膜上之附有接著劑片之半導體元件而進行附有接著劑片之半導體元件的拾取之步驟。作為拾取的方法沒有特別限定，能夠採用以往公知的各種方法。作為這樣的方法，例如可舉出藉由針從切割晶粒接合一體型膜側將各個附有接著劑片之半導體元件頂起，藉由拾取裝置拾取被頂起之附有接著劑片之半導體元件之方法等。The method of manufacturing a semiconductor device may also include a pick-up step as needed. The pick-up step is a step of picking up the semiconductor element with the adhesive sheet in order to peel off and then fix the semiconductor element with the adhesive sheet attached to the dicing die-bonding integrated film. The method of picking up is not particularly limited, and various conventionally known methods can be employed. As such a method, for example, each semiconductor element with an adhesive sheet is lifted up from the dicing die bonding integrated film side by a needle, and the lifted semiconductor with an adhesive sheet is picked up by a pick-up device. Component methods, etc.
在此，在黏著劑層為放射線（例如，紫外線）固化型之情況下，能夠在對該黏著劑層照射放射線後進行拾取。藉此，黏著劑層對接著劑片的黏著力下降，附有接著劑片之半導體元件的剝離變得容易。其結果，能夠不損傷附有接著劑片之半導體元件而進行拾取。Here, when the adhesive layer is a radiation (for example, ultraviolet) curing type, it is possible to pick up after irradiating the adhesive layer with radiation. Thereby, the adhesive force of an adhesive layer to an adhesive sheet falls, and peeling of the semiconductor element with which an adhesive sheet was attached becomes easy. As a result, it is possible to pick up without damaging the semiconductor element with the adhesive sheet attached.
第1接著步驟為經由接著劑片將藉由切割形成之附有接著劑片之半導體元件接著於用於搭載半導體元件的支撐構件上之步驟。半導體裝置之製造方法依據需要還可以包括經由接著劑片將其他附有接著劑片之半導體元件接著於與支撐構件接著之半導體元件的表面上之步驟（第2接著步驟）。接著均能夠藉由壓接進行。作為壓接條件，沒有特別限定，能夠依據需要適當設定。壓接條件例如可以為80～160℃的溫度、5～15N的荷重、1～10秒的時間。另外，作為支撐構件，能夠例示與上述相同的支撐構件。The first bonding step is a step of bonding the semiconductor element with the adhesive sheet formed by dicing on the support member for mounting the semiconductor element via the adhesive sheet. The method of manufacturing a semiconductor device may further include a step of bonding other semiconductor elements with an adhesive sheet on the surface of the semiconductor element bonded to the support member via an adhesive sheet (second bonding step). Both can then be carried out by crimping. The pressure-bonding conditions are not particularly limited, and can be appropriately set as necessary. The pressure-bonding conditions may be, for example, a temperature of 80 to 160° C., a load of 5 to 15 N, and a time of 1 to 10 seconds. In addition, as a support member, the same support member as mentioned above can be illustrated.
半導體裝置之製造方法依據需要亦可以包括使接著劑片進一步熱固化之步驟（熱固化步驟）。藉由使將半導體元件與支撐構件、或將半導體元件（第1半導體元件）與半導體元件（第2半導體元件）接著之接著劑片進一步熱固化，能夠更牢固地接著固定。在使接著劑片進一步熱固化之情況下，還可以同時施加壓力而使其固化。本步驟中的加熱溫度能夠依據構成成分適當變更接著劑片。加熱溫度例如可以為60～200℃。另外，關於溫度或壓力，亦可以一邊階段性地變更一邊施加。The method of manufacturing a semiconductor device may include a step of further thermally curing the adhesive sheet (thermal curing step) as needed. By further thermally curing the adhesive sheet bonding the semiconductor element and the supporting member, or the semiconductor element (first semiconductor element) and the semiconductor element (second semiconductor element), it is possible to adhere and fix more firmly. When further thermally curing the adhesive sheet, it may also be cured by applying pressure at the same time. The heating temperature in this step can be appropriately changed according to the constituent components of the adhesive sheet. The heating temperature may be, for example, 60 to 200°C. In addition, temperature and pressure may be applied while being changed stepwise.
半導體裝置之製造方法亦可以依據需要包括將支撐構件的端子部（內部引線）的末端與半導體元件上的電極墊（electrode pad）用接合導線電連接之步驟（導線接合步驟）。作為接合導線，例如使用金線、鋁線、銅線等。進行導線接合（設置接合導線）時的溫度可以在80～250℃或80～220℃的範圍內。加熱時間可以為數秒～數分鐘。設置接合導線時，亦可以在上述溫度範圍內加熱之狀態下，藉由併用基於超聲波的振動能量和基於施加加壓的壓接能量來進行。The method of manufacturing a semiconductor device may include a step of electrically connecting the end of the terminal portion (inner lead) of the support member and the electrode pad on the semiconductor element with a bonding wire (wire bonding step) as needed. As the bonding wire, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature at the time of performing wire bonding (setting a bonding wire) may be within a range of 80 to 250° C. or 80 to 220° C. The heating time may be several seconds to several minutes. When installing the bonding wire, it can also be carried out by using both vibration energy by ultrasonic waves and crimping energy by applying pressure while heating within the above-mentioned temperature range.
半導體裝置之製造方法亦可以依據需要包括利用密封材料來密封半導體元件之步驟（密封步驟）。本步驟係為了保護搭載於支撐構件上之半導體元件或接合導線而進行。本步驟能夠藉由用模具成型密封用樹脂（密封樹脂）來進行。作為密封樹脂，例如可以為環氧系樹脂。藉由密封時的熱及壓力埋入支撐構件及殘渣，能夠防止由接著界面中的氣泡引起之剝離。The method of manufacturing a semiconductor device may include a step of sealing the semiconductor element with a sealing material (sealing step) as needed. This step is performed to protect the semiconductor element or the bonding wire mounted on the supporting member. This step can be performed by molding the resin for sealing (sealing resin) with a mold. As the sealing resin, for example, an epoxy-based resin may be used. By embedding the supporting member and residue by the heat and pressure at the time of sealing, it is possible to prevent peeling due to air bubbles in the bonding interface.
半導體裝置之製造方法亦可以依據需要包括使在密封步驟中固化不充分的密封樹脂完全固化之步驟（後固化步驟）。在密封步驟中，即使在接著劑片未熱固化之情況下，在本步驟中，亦能夠在固化密封樹脂的同時使接著劑片熱固化來接著固定。本步驟中的加熱溫度能夠依據密封樹脂的種類而適當設定，例如可以在165～185℃的範圍內，加熱時間可以為0.5～8小時左右。The method of manufacturing a semiconductor device may include a step of completely curing the sealing resin that was insufficiently cured in the sealing step (post-curing step) as needed. In the sealing step, even if the adhesive sheet is not thermally cured, in this step, the adhesive sheet can be thermally cured and fixed while curing the sealing resin. The heating temperature in this step can be appropriately set according to the type of sealing resin, for example, it can be in the range of 165-185° C., and the heating time can be about 0.5-8 hours.
半導體裝置之製造方法亦可以依據需要包括使用迴焊爐對接著於支撐構件上之附有接著劑片之半導體元件進行加熱之步驟（加熱熔融步驟）。在本步驟中，亦可以將樹脂密封之半導體裝置表面安裝於支撐構件上。作為表面安裝的方法，例如可舉出預先將焊料供給到印刷配線板上後，利用溫風等加熱熔融，進行焊接之迴焊等。作為加熱方法，例如可舉出熱風迴焊、紅外線迴焊等。又，加熱方法可以對整體進行加熱，亦可以對局部進行加熱。加熱溫度例如可以在240～280℃的範圍內。 [實施例] The method of manufacturing a semiconductor device may also include a step of heating the semiconductor element with the adhesive sheet attached to the support member using a reflow furnace (heating and melting step) as needed. In this step, the resin-sealed semiconductor device may also be surface-mounted on the supporting member. As a method of surface mounting, reflow etc. which heat-melt with warm air etc. after supplying solder to a printed wiring board in advance, and perform soldering are mentioned, for example. As a heating method, a hot-air reflow, an infrared reflow, etc. are mentioned, for example. In addition, as the heating method, the whole body may be heated, or local heating may be used. The heating temperature can be, for example, within the range of 240 to 280°C. [Example]
以下，基於實施例對本揭示具體地進行說明，但本揭示並不限定於該等。Hereinafter, although this indication is demonstrated concretely based on an Example, this indication is not limited to these.
[接著劑組成物的製備及膜狀接著劑的製作] （實施例1～9及比較例1～7） ＜接著劑清漆的製備＞ 以表1及表2所示之成分及含量（單位：質量份），在由（A）成分（（A1）成分及/或（A2））、（B1）成分及/或（B2）、以及（D）成分構成之混合物中加入環己酮，進行了攪拌混合。向其中以表1及表2所示之成分及含量（單位：質量份）加入（C）成分並攪拌，進而加入（E）成分及（F）成分，攪拌至各成分變得均勻，製備出接著劑清漆。另外，表1及表2所示之各成分係指下述成分，表1及表2所示之數值係指固體成分的質量份。 [Preparation of Adhesive Composition and Production of Film Adhesive] (Examples 1-9 and Comparative Examples 1-7) ＜Preparation of Adhesive Varnish＞ Based on the ingredients and contents (unit: parts by mass) shown in Table 1 and Table 2, in (A) ingredient ((A1) ingredient and/or (A2)), (B1) ingredient and/or (B2), and (D) Cyclohexanone was added to the mixture composed of the components, and stirred and mixed. Add (C) component to it with the components and content (unit: parts by mass) shown in Table 1 and Table 2 and stir, then add (E) component and (F) component, and stir until each component becomes uniform to prepare Adhesive varnish. In addition, each component shown in Table 1 and Table 2 means the following components, and the numerical value shown in Table 1 and Table 2 means the mass part of solid content.
（A）成分：環氧樹脂 （A1）成分：軟化點為40℃以下之環氧樹脂（在30℃下為液狀之環氧樹脂） （A1-1）YDF-8170C（商品名，NIPPON STEEL Chemical & Material Co., Ltd.，雙酚F型環氧樹脂，環氧當量：159g/eq，在30℃下為液狀） （A2）成分：軟化點超過40℃之環氧樹脂 （A2-1）N-500P-10（商品名，DIC Corporation製造，鄰甲酚酚醛清漆型環氧樹脂，環氧當量：204g/eq，軟化點：75～85℃） (A) Component: epoxy resin (A1) Ingredients: Epoxy resin with softening point below 40°C (liquid epoxy resin at 30°C) (A1-1) YDF-8170C (trade name, NIPPON STEEL Chemical & Material Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent: 159g/eq, liquid at 30°C) (A2) Composition: Epoxy resin with a softening point exceeding 40°C (A2-1) N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolak type epoxy resin, epoxy equivalent: 204g/eq, softening point: 75 to 85°C)
（B1）成分：軟化點為90℃以上之第1固化劑 （B1-1）PSM-4326（商品名，Gunei Chemical Industry Co., Ltd.製造，苯酚酚醛清漆型酚醛樹脂，羥基當量：105g/eq，軟化點：120℃） (B1) Component: The first curing agent with a softening point of 90°C or higher (B1-1) PSM-4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., phenol novolac type phenolic resin, hydroxyl equivalent: 105 g/eq, softening point: 120° C.)
（B2）成分：軟化點小於90℃之第2固化劑 （B2-1）MEH-7800M（商品名，Meiwa Chemical Industry Co.,Ltd.製造，苯基芳烷基型酚醛樹脂，羥基當量：174g/eq，軟化點：80℃） (B2) Component: The second curing agent with a softening point of less than 90°C (B2-1) MEH-7800M (trade name, manufactured by Meiwa Chemical Industry Co., Ltd., phenylaralkyl type phenolic resin, hydroxyl equivalent: 174g/eq, softening point: 80°C)
（C）成分：彈性體 （C-1）SG-P3（商品名，Nagase ChemteX Corporation製造，丙烯酸橡膠，重量平均分子量：80萬，Tg：12℃） (C) Component: Elastomer (C-1) SG-P3 (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C)
（D）成分：無機填料 （D-1）SC2050-HLG（商品名，Admatechs Co.,Ltd.製造，二氧化矽填料分散液，平均粒徑：0.50μm） （D-2）SC1030-HJA（商品名，Admatechs Co.,Ltd.製造，二氧化矽填料分散液，平均粒徑：0.30μm） （D-3）R972（商品名，NIPPON AEROSIL CO., LTD.製造，二氧化矽粒子，平均粒徑：0.016μm） (D) Component: Inorganic filler (D-1) SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle diameter: 0.50 μm) (D-2) SC1030-HJA (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle diameter: 0.30 μm) (D-3) R972 (trade name, manufactured by NIPPON AEROSIL CO., LTD., silica particles, average particle size: 0.016 μm)
（E）成分：偶合劑 （E-1）A-189（商品名，Nippon Unicar Company Limited製造，γ-巰基丙基三甲氧基矽烷） （E-2）A-1160（商品名，Nippon Unicar Company Limited製造，γ-脲基丙基三乙氧基矽烷） (E) Component: Coupler (E-1) A-189 (trade name, manufactured by Nippon Unicar Company Limited, γ-mercaptopropyltrimethoxysilane) (E-2) A-1160 (trade name, manufactured by Nippon Unicar Company Limited, γ-ureidopropyltriethoxysilane)
（F）成分：固化促進劑 （F-1）2PZ-CN（商品名，SHIKOKU CHEMICALS CORPORATION製造，1-氰基乙基-2-苯基咪唑） (F) Component: curing accelerator (F-1) 2PZ-CN (trade name, manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole)
＜膜狀接著劑的製作＞ 將所製作之接著劑清漆用100篩目的過濾器過濾，並進行真空消泡。作為支撐膜，準備厚度38μm的實施了脫模處理之聚對苯二甲酸乙二酯膜（PET）膜，將真空消泡後的接著劑清漆塗佈於PET膜上。將所塗佈之接著劑清漆以在90℃下加熱乾燥5分鐘，接著，在140℃下加熱乾燥5分鐘這分兩階段進行加熱乾燥，得到了B階段狀態的實施例1～9及比較例1～7的膜狀接著劑。在膜狀接著劑中，依據接著劑清漆的塗佈量，將膜狀接著劑的厚度調整為7μm。 ＜Production of film adhesive＞ Filter the prepared adhesive varnish with a 100-mesh filter, and perform vacuum defoaming. As a support film, a polyethylene terephthalate film (PET) film having a thickness of 38 μm and subjected to mold release treatment was prepared, and an adhesive varnish after vacuum defoaming was applied on the PET film. The applied adhesive varnish was heat-dried at 90°C for 5 minutes, and then heat-dried at 140°C for 5 minutes in two stages. Examples 1-9 and Comparative Example in the B-stage state were obtained. 1-7 film adhesives. In the film adhesive, the thickness of the film adhesive was adjusted to 7 μm in accordance with the coating amount of the adhesive varnish.
[膜狀接著劑的評價] ＜薄膜塗佈性的評價＞ 薄膜塗佈性的評價係目視確認所製作之薄膜（厚度：7μm）的膜狀接著劑的塗佈面，依據有無異物、脫落、條紋等不良情況來進行了評價。將沒有確認到不良情況者評價為“A”，將確認到不良情況者評價為“B”。將結果示於表1及表2中。 [Evaluation of film adhesives] ＜Evaluation of film coatability＞ Evaluation of film applicability was performed by visually checking the coated surface of the film-like adhesive of the produced film (thickness: 7 μm), and evaluating by the presence or absence of defects such as foreign matter, peeling, and streaks. The evaluation of "A" was made for the case where no defect was confirmed, and the evaluation was "B" for the case where a defect was confirmed. The results are shown in Table 1 and Table 2.
＜凹凸埋入性的評價＞ （半導體裝置的製作） 使用實施例1～9及比較例1～7的膜狀接著劑進行了埋入性的評價。準備切割帶（Showa Denko Materials co., Ltd.製造，厚度：110μm），貼附所製作之膜狀接著劑（厚度：7μm），製作出具備切割帶及膜狀接著劑之切割晶粒接合一體型膜。在階段溫度70℃下，將半導體晶圓（厚度：75μm）層合於由切割晶粒接合一體型膜的膜狀接著劑形成之接著劑層側，製作出切割樣品。 ＜Evaluation of uneven embedding property＞ (manufacturing of semiconductor devices) Embedding properties were evaluated using the film adhesives of Examples 1-9 and Comparative Examples 1-7. Prepare a dicing tape (manufactured by Showa Denko Materials co., Ltd., thickness: 110 μm), attach the prepared film adhesive (thickness: 7 μm), and make a dicing die bonded with a dicing tape and a film adhesive. body film. At a stage temperature of 70°C, a semiconductor wafer (thickness: 75 μm) was laminated on the side of the adhesive layer formed of a film-like adhesive of the dicing die-bonding integrated film, and a diced sample was produced.
使用全自動切割機DFD-6361（DISCO Corporation製造），切斷所得到之切割樣品。切斷以使用2片刀片之階梯切割方式進行，使用了切割刀片ZH05-SD3500-N1-xx-DD及ZH05-SD4000-N1-xx-BB（均為DISCO Corporation製造）。切斷條件設為刀片轉數4000旋轉/分、切斷速度50mm/秒、晶片尺寸7.5mm×7.5mm。關於切斷，在厚度方向上，以半導體晶圓殘留30μm左右之方式進行第1階段的切斷，接著，以在切割帶上形成20μm左右的切槽之方式進行第2階段的切斷。The resulting cut sample was cut using a fully automatic cutting machine DFD-6361 (manufactured by DISCO Corporation). Cutting was performed by step cutting using two blades, and cutting blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by DISCO Corporation) were used. Cutting conditions were set at 4000 revolutions/minute of the blade, a cutting speed of 50 mm/sec, and a wafer size of 7.5 mm×7.5 mm. Regarding dicing, the first step of dicing is performed so that about 30 μm of the semiconductor wafer remains in the thickness direction, and then the second step of dicing is performed so that about 20 μm of grooves are formed in the dicing tape.
接著，使用拾取用夾頭拾取應拾取的半導體元件（半導體晶片）。在拾取中，使用中央的1根銷（pin）來頂起。作為拾取條件，將頂起速度設定為20mm/s，將頂起高度設定為450μm。以這種方式，得到了附有接著劑片之半導體元件。Next, the semiconductor element (semiconductor wafer) to be picked up is picked up using the pickup chuck. In picking up, use the central 1 pin (pin) to jack up. As pick-up conditions, the jacking speed was set to 20 mm/s, and the jacking height was set to 450 μm. In this way, an adhesive chip-attached semiconductor element was obtained.
接著，使用晶粒接合機BESTEM-D02（Canon Machinery Inc.製造），將附有接著劑片之半導體元件（半導體晶片）壓接於具有作為支撐構件的虛設電路之玻璃環氧基板上。此時，調整位置以使半導體元件位於虛設電路的中央。以這種方式，得到了具備支撐構件及配置於支撐構件上之半導體元件之半導體裝置。Next, using a die bonder BESTEM-D02 (manufactured by Canon Machinery Inc.), the semiconductor element (semiconductor wafer) with the adhesive sheet was crimped onto the glass epoxy substrate having the dummy circuit as a supporting member. At this time, adjust the position so that the semiconductor element is located at the center of the dummy circuit. In this way, a semiconductor device including a support member and a semiconductor element arranged on the support member is obtained.
（凹凸埋入性的評價） 用超聲波影像裝置（SAT）（Hitachi Construction Machinery Fine Tech Co., Ltd.製造，HYE-FOCUS）分析所得到之半導體裝置，將有無產生空隙作為凹凸埋入性進行評價。將沒有確認到產生空隙者作為凹凸埋入性良好而評價為“A”，將即使一部分確認到產生空隙者評價為“B”。將結果示於表1及表2中。 (Evaluation of concave-convex embedding properties) The obtained semiconductor device was analyzed with an ultrasonic imaging device (SAT) (manufactured by Hitachi Construction Machinery Fine Tech Co., Ltd., HYE-FOCUS), and the presence or absence of voids was evaluated as uneven embedding property. Those in which voids were not observed were evaluated as "A" because the unevenness embedding property was good, and those in which voids were partially observed were evaluated as "B". The results are shown in Table 1 and Table 2.
＜導線接合性的評價＞ 導線接合性的評價藉由測量實施例1～9及比較例1～7的膜狀接著劑（接著劑組成物）固化後的150℃下的儲存彈性模數來進行。利用以下方法測量了該儲存彈性模數。亦即，藉由積層複數個厚度7μm的膜狀接著劑，將厚度設為約300μm，藉由將其切出4mm×50mm來製作出測量用試樣。使所製作之試樣以170℃、1小時的條件固化，使用動態黏彈性測量裝置DVE-V4（商品名，RHEOLOGY公司製造）在以下測量條件下進行測量，將150℃時的儲存彈性模數值作為150℃下的儲存彈性模數。例如，若150℃下的儲存彈性模數為23MPa以上，則可以說導線接合性優異。將結果示於表1及表2中。 （測量條件） ・夾頭間距離：20mm ・升溫速度：5℃/min ・測量治具：拉伸測量治具 ・頻率：10Hz ・荷重：自動靜荷重 ＜Evaluation of Wire Bondability＞ The evaluation of the wire bonding property was performed by measuring the storage elastic modulus at 150° C. after curing of the film adhesives (adhesive compositions) of Examples 1 to 9 and Comparative Examples 1 to 7. The storage elastic modulus was measured by the following method. That is, a measurement sample was produced by laminating a plurality of film-like adhesives with a thickness of 7 μm to a thickness of about 300 μm, and cutting it out at 4 mm×50 mm. The prepared sample was cured at 170°C for 1 hour, and the dynamic viscoelasticity measuring device DVE-V4 (trade name, manufactured by RHEOLOGY Co., Ltd.) was used to measure under the following measurement conditions, and the storage elastic modulus value at 150°C As the storage elastic modulus at 150°C. For example, if the storage elastic modulus at 150° C. is 23 MPa or more, it can be said that the wire bonding property is excellent. The results are shown in Table 1 and Table 2. (measurement conditions) ・Distance between chucks: 20mm ・Heating rate: 5°C/min ・Measuring jig: Tensile measuring jig ・Frequency: 10Hz ・Load: Automatic static load
【表1】
【表2】
如表1及表2所示，實施例1～9的膜狀接著劑（接著劑組成物）與比較例1～7的膜狀接著劑（接著劑組成物）相比，在薄膜塗佈性、凹凸埋入性及導線接合性的所有方面優異。由該等結果確認到，本揭示的接著劑組成物能夠形成薄膜塗佈性優異且凹凸埋入性及導線接合性優異的膜狀接著劑。As shown in Table 1 and Table 2, the film-like adhesives (adhesive compositions) of Examples 1 to 9 were better than the film-like adhesives (adhesive compositions) of Comparative Examples 1-7 in film coatability. It is excellent in all aspects of embedding of unevenness, embedding property and wire bonding property. From these results, it was confirmed that the adhesive composition of the present disclosure can form a film-like adhesive having excellent thin-film applicability, uneven embedding property, and wire bonding property.
1:膜狀接著劑
1A:接著劑層
2:基材層
3:黏著劑層
4:切割帶
10:切割晶粒接合一體型膜
11,11a,11b,11c,11d:半導體元件
12:支撐構件
13:導線
14:密封材料
15,15a,15b,15c,15d:接著構件
16:端子
100,110,120:半導體裝置
1: Film adhesive
1A: Adhesive layer
2: Substrate layer
3: Adhesive layer
4: Cutting tape
10: Cutting Die
圖1係表示膜狀接著劑的一實施形態之示意剖面圖。 圖2係表示切割晶粒接合一體型膜的一實施形態之示意剖面圖。 圖3係表示半導體裝置的一實施形態之示意剖面圖。 圖4係表示半導體裝置的另一實施形態之示意剖面圖。 圖5係表示半導體裝置的另一實施形態之示意剖面圖。 Fig. 1 is a schematic cross-sectional view showing one embodiment of a film adhesive. FIG. 2 is a schematic cross-sectional view showing an embodiment of a dicing die-bonding integrated film. Fig. 3 is a schematic cross-sectional view showing an embodiment of a semiconductor device. Fig. 4 is a schematic cross-sectional view showing another embodiment of a semiconductor device. Fig. 5 is a schematic cross-sectional view showing another embodiment of a semiconductor device.
Claims (19)
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| PCT/JP2021/000553 WO2022149277A1 (en) | 2021-01-08 | 2021-01-08 | Adhesive composition, film adhesive, dicing/die-bonding all-in-one film, semiconductor device, and production method for semiconductor device |
| WOPCT/JP2021/000553 | 2021-01-08 |
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| TW202237786A true TW202237786A (en) | 2022-10-01 |
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| JP (1) | JPWO2022149581A1 (en) |
| KR (1) | KR20230129234A (en) |
| CN (1) | CN116848208A (en) |
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| JP5532575B2 (en) * | 2007-10-22 | 2014-06-25 | 日立化成株式会社 | Adhesive sheet |
| JP2009231469A (en) * | 2008-03-21 | 2009-10-08 | Hitachi Chem Co Ltd | Die bond film |
| JP5454018B2 (en) * | 2009-09-01 | 2014-03-26 | 日立化成株式会社 | Film adhesive, adhesive sheet and semiconductor device |
| KR20160139043A (en) | 2012-03-08 | 2016-12-06 | 히타치가세이가부시끼가이샤 | Adhesive sheet and method for manufacturing semiconductor device |
| JP5924145B2 (en) * | 2012-06-12 | 2016-05-25 | 日立化成株式会社 | Film adhesive, adhesive sheet, and method for manufacturing semiconductor device |
| JP6135202B2 (en) * | 2013-03-08 | 2017-05-31 | 日立化成株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| JP6676884B2 (en) * | 2015-06-02 | 2020-04-08 | 日立化成株式会社 | Thermosetting resin composition, prepreg, laminated board and printed wiring board |
| CN106715631B (en) * | 2015-07-10 | 2019-07-30 | 株式会社Lg化学 | Semiconductor adhesive composition and dicing die adhesive film |
| KR20210030931A (en) | 2018-07-11 | 2021-03-18 | 쇼와덴코머티리얼즈가부시끼가이샤 | Semiconductor device manufacturing method, thermosetting resin composition and dicing/die-bonding integrated film |
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2021
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