TW202230565A

TW202230565A - Chip-transferring method, chip-transferring device and image display

Info

Publication number: TW202230565A
Application number: TW110103568A
Authority: TW
Inventors: 廖建碩
Original assignee: 台灣愛司帝科技股份有限公司
Priority date: 2021-01-29
Filing date: 2021-01-29
Publication date: 2022-08-01
Also published as: TWI811625B

Abstract

A chip-transferring method, a chip-transferring device using the chip-transferring method and an image display produced by the chip-transferring method are provided. The chip-transferring method includes providing a circuit substrate and a chip structure, and the chip structure including a chip carrier and a plurality of chips disposed on the chip carrier; providing an insulating material between the circuit substrate and the chip carrier; curing a plurality of conductive solder layers so as to bonding the chips on the circuit substrate; and curing the insulating material. Therefore, a structural-strengthening layer can be formed between the circuit substrate and the chip carrier.

Description

晶片移轉方法、晶片移轉裝置以及影像顯示器Wafer transfer method, wafer transfer apparatus, and image display

本發明涉及一種移轉方法，特別是涉及一種晶片移轉方法、一種使用晶片移轉方法的晶片移轉裝置以及一種由晶片移轉方法所製作而成的影像顯示器。The present invention relates to a transfer method, in particular to a wafer transfer method, a wafer transfer device using the wafer transfer method, and an image display manufactured by the wafer transfer method.

現有技術中，發光二極體晶片可以透過吸嘴的取放動作或是頂針的頂抵動作，以從一承載體移轉到另一承載體上，然後再透過外部加熱方式（例如回焊爐）將發光二極體晶片安裝在電路基板上。In the prior art, the light-emitting diode chip can be transferred from one carrier to another carrier through the pick-and-place action of the suction nozzle or the pushing action of the thimble, and then through an external heating method (such as a reflow oven). ) to mount the light-emitting diode chip on the circuit board.

本發明所要解決的技術問題在於，針對現有技術的不足提供一種晶片移轉方法、晶片移轉裝置以及影像顯示器。The technical problem to be solved by the present invention is to provide a wafer transfer method, a wafer transfer device and an image display device in view of the deficiencies of the prior art.

為了解決上述的技術問題，本發明所採用的其中一技術方案是提供一種晶片移轉方法，其包括：提供一電路基板以及一晶片結構，晶片結構包括一晶片載體以及設置在晶片載體上的多個晶片；提供一絕緣材料於電路基板與晶片載體之間；固化多個導電焊接層，以將多個晶片固定在電路基板上；以及，固化絕緣材料，以形成一結構強化層於電路基板與晶片載體之間。In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a wafer transfer method, which includes: providing a circuit substrate and a wafer structure, wherein the wafer structure includes a wafer carrier and a plurality of a plurality of chips; providing an insulating material between the circuit substrate and the chip carrier; curing a plurality of conductive solder layers to fix the plurality of chips on the circuit substrate; and curing the insulating material to form a structural reinforcement layer between the circuit substrate and the circuit substrate between wafer carriers.

為了解決上述的技術問題，本發明所採用的另外一技術方案是提供一種影像顯示器，並且影像顯示器是由晶片移轉方法所製作而成。In order to solve the above-mentioned technical problem, another technical solution adopted by the present invention is to provide an image display, and the image display is manufactured by a wafer transfer method.

為了解決上述的技術問題，本發明所採用的另外再一技術方案是提供一種晶片移轉裝置，並且晶片移轉裝置使用晶片移轉方法。晶片移轉裝置包括：一基板承載模組、一晶片承載模組、一材料提供模組、一材料固化模組、一材料移除模組以及一訊號控制模組。基板承載模組用於承載或者移動電路基板。晶片承載模組用於承載或者移動晶片結構。材料提供模組用於提供填充於電路基板與晶片載體之間的絕緣材料。材料固化模組用於固化絕緣材料。材料移除模組用於移除晶片載體。訊號控制模組電性連接於基板承載模組、晶片承載模組、材料提供模組、材料固化模組以及材料移除模組。In order to solve the above-mentioned technical problem, another technical solution adopted by the present invention is to provide a wafer transfer apparatus, and the wafer transfer apparatus uses a wafer transfer method. The chip transfer device includes: a substrate carrying module, a chip carrying module, a material supplying module, a material curing module, a material removing module and a signal control module. The substrate carrying module is used to carry or move the circuit substrate. The wafer carrier module is used to carry or move the wafer structure. The material providing module is used for providing insulating material filled between the circuit substrate and the chip carrier. The material curing module is used to cure insulating materials. The material removal module is used to remove the wafer carrier. The signal control module is electrically connected to the substrate carrying module, the chip carrying module, the material supplying module, the material curing module and the material removing module.

為了解決上述的技術問題，本發明所採用的另外又一技術方案是提供一種晶片移轉裝置，並且晶片移轉裝置使用晶片移轉方法。晶片移轉裝置包括：一基板承載模組、一晶片承載模組、一材料提供模組、一晶片固晶模組、一材料固化模組、一材料移除模組以及一訊號控制模組。基板承載模組用於承載或者移動電路基板。晶片承載模組用於承載或者移動晶片結構。材料提供模組用於提供形成於電路基板與晶片載體之間的絕緣材料。晶片固晶模組用於將多個晶片固定在電路基板上。材料固化模組用於固化絕緣材料。材料移除模組用於移除晶片載體。訊號控制模組電性連接於基板承載模組、晶片承載模組、材料提供模組、晶片固晶模組、材料固化模組以及材料移除模組。In order to solve the above-mentioned technical problem, another technical solution adopted by the present invention is to provide a wafer transfer apparatus, and the wafer transfer apparatus uses a wafer transfer method. The chip transfer device includes: a substrate carrying module, a chip carrying module, a material supply module, a chip die bonding module, a material curing module, a material removal module and a signal control module. The substrate carrying module is used to carry or move the circuit substrate. The wafer carrier module is used to carry or move the wafer structure. The material supply module is used to supply the insulating material formed between the circuit substrate and the chip carrier. The wafer bonding module is used for fixing a plurality of wafers on the circuit substrate. The material curing module is used to cure insulating materials. The material removal module is used to remove the wafer carrier. The signal control module is electrically connected to the substrate carrying module, the chip carrying module, the material supplying module, the chip die bonding module, the material curing module and the material removing module.

本發明的其中一有益效果在於，本發明所提供的一種晶片移轉方法，其能通過“提供一電路基板以及一晶片結構，晶片結構包括一晶片載體以及設置在晶片載體上的多個晶片”、“提供一絕緣材料於電路基板與晶片載體之間”、“固化多個導電焊接層，以將多個晶片固定在電路基板上”以及“固化絕緣材料”的技術方案，以形成一結構強化層於電路基板與晶片載體之間。One of the beneficial effects of the present invention is that a wafer transfer method provided by the present invention can provide a circuit substrate and a wafer structure, and the wafer structure includes a wafer carrier and a plurality of wafers arranged on the wafer carrier. , "provide an insulating material between the circuit substrate and the chip carrier", "curing a plurality of conductive solder layers to fix a plurality of chips on the circuit substrate" and "curing the insulating material" to form a structural reinforcement layered between the circuit substrate and the chip carrier.

為使能進一步瞭解本發明的特徵及技術內容，請參閱以下有關本發明的詳細說明與圖式，然而所提供的圖式僅用於提供參考與說明，並非用來對本發明加以限制。To further understand the features and technical content of the present invention, please refer to the following detailed descriptions and drawings related to the present invention, however, the drawings provided are only for reference and description, not for limiting the present invention.

以下是通過特定的具體實施例來說明本發明所公開有關“晶片移轉方法、晶片移轉裝置以及影像顯示器”的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以實行或應用，本說明書中的各項細節也可基於不同觀點與應用，在不背離本發明的構思下進行各種修改與變更。另外，本發明的圖式僅為簡單示意說明，並非依實際尺寸的描繪，事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容，但所公開的內容並非用以限制本發明的保護範圍。另外，本文中所使用的術語“或”，應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。The following are specific embodiments to illustrate the embodiments of the "wafer transfer method, wafer transfer apparatus and image display" disclosed in the present invention. Those skilled in the art can understand the advantages and disadvantages of the present invention from the content disclosed in this specification. Effect. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple schematic illustration, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical contents of the present invention in detail, but the disclosed contents are not intended to limit the protection scope of the present invention. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.

配合圖1至圖15所示，本發明提供一種晶片移轉方法，其包括：首先，提供一電路基板1以及一晶片結構2，晶片結構2包括一晶片載體20以及設置在晶片載體20上的多個晶片21；然後，提供一絕緣材料S於電路基板1與晶片載體20之間；接著，固化絕緣材料S，以形成一結構強化層3於電路基板1與晶片載體20之間。值得注意的是，本發明進一步提供一種由晶片移轉方法所製作而成的影像顯示器以及一種使用晶片移轉方法的晶片移轉裝置。1 to 15 , the present invention provides a wafer transfer method, which includes: first, providing a circuit substrate 1 and a wafer structure 2 . The wafer structure 2 includes a wafer carrier 20 and a wafer A plurality of chips 21 ; then, an insulating material S is provided between the circuit substrate 1 and the chip carrier 20 ; then, the insulating material S is cured to form a structural reinforcement layer 3 between the circuit substrate 1 and the chip carrier 20 . It is worth noting that the present invention further provides an image display manufactured by the wafer transfer method and a wafer transfer apparatus using the wafer transfer method.

[第一實施例][First Embodiment]

參閱圖1至圖8所示，本發明第一實施例提供一種晶片移轉方法，其包括：首先，配合圖1與圖2所示，提供一電路基板1以及一晶片結構2，晶片結構2包括一晶片載體20以及設置在晶片載體20上的多個晶片21（步驟S100）；接著，配合圖1、圖2與圖3所示，使晶片結構2與電路基板1彼此靠近，以將多個晶片21放置在電路基板1上（步驟S102）；然後，配合圖1與圖3所示，將絕緣材料S填充於電路基板1與晶片載體20之間（步驟S104）；接下來，配合圖1、圖3與圖4（或者配合圖1、圖3與圖5）所示，同時固定多個晶片21以及固化絕緣材料S，絕緣材料S被固化而形成一結構強化層3於電路基板1與晶片載體20之間（步驟S106）；緊接著，配合圖1、圖7與圖8所示，移除晶片載體20，而將多個晶片21留在電路基板1上（步驟S108）。值得注意的是，由於結構強化層3可以預先被形成在電路基板1與晶片載體20之間，所以在移除晶片載體20的步驟S108中，多個晶片21可以透過結構強化層3而被穩固地固定在電路基板1上。Referring to FIGS. 1 to 8 , a first embodiment of the present invention provides a wafer transfer method, which includes: first, as shown in FIGS. 1 and 2 , a circuit substrate 1 and a chip structure 2 are provided, and the chip structure 2 including a wafer carrier 20 and a plurality of wafers 21 disposed on the wafer carrier 20 (step S100 ); then, as shown in FIG. 1 , FIG. 2 and FIG. The chips 21 are placed on the circuit substrate 1 (step S102 ); then, as shown in FIG. 1 and FIG. 3 , the insulating material S is filled between the circuit substrate 1 and the chip carrier 20 (step S104 ); 1. As shown in FIG. 3 and FIG. 4 (or in conjunction with FIG. 1 , FIG. 3 and FIG. 5 ), a plurality of wafers 21 are fixed and the insulating material S is cured at the same time, and the insulating material S is cured to form a structural reinforcement layer 3 on the circuit substrate 1 and the wafer carrier 20 (step S106 ); then, as shown in FIGS. 1 , 7 and 8 , the wafer carrier 20 is removed, and the plurality of wafers 21 are left on the circuit substrate 1 (step S108 ). It should be noted that since the structural strengthening layer 3 can be formed between the circuit substrate 1 and the chip carrier 20 in advance, in the step S108 of removing the chip carrier 20 , the plurality of chips 21 can be stabilized through the structural strengthening layer 3 fixed on the circuit board 1.

舉例來說，如圖8所示，當多個晶片21為發光二極體晶片時，多個晶片21可以分別配合多個波長轉換層的使用而提供一影像資訊，所以本發明第一實施例能夠進一步提供一種由晶片移轉方法所製作而成的影像顯示器。另外，當影像顯示器所使用的絕緣材料S為不透光材料時，結構強化層3能夠做為一不透光的隔離層（例如做為黑色矩陣的結構強化層3）來使用。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 8, when the plurality of chips 21 are light-emitting diode chips, the plurality of chips 21 can be used with a plurality of wavelength conversion layers to provide an image information, so the first embodiment of the present invention It is possible to further provide an image display manufactured by the wafer transfer method. In addition, when the insulating material S used in the image display is an opaque material, the structural reinforcement layer 3 can be used as an opaque isolation layer (eg, the structural reinforcement layer 3 of a black matrix). However, the present invention is not limited to the above-mentioned examples.

舉例來說，配合圖2至圖7所示，本發明第一實施例提供一種使用晶片移轉方法的晶片移轉裝置，其包括：一基板承載模組M1、一晶片承載模組M2、一材料提供模組M3、一材料固化模組M5、一材料移除模組M6以及一訊號控制模組M7。更進一步來說，配合圖2、圖3與圖6所示，基板承載模組M1能夠用於承載或者移動電路基板1，並且晶片承載模組M2能夠用於承載或者移動晶片結構2。如圖3所示，材料提供模組M3能夠用於提供填充於電路基板1與晶片載體20之間的絕緣材料S。如圖4或者圖5所示，材料固化模組M5能夠用於固化絕緣材料S。配合圖7與圖8所示，材料移除模組M6能夠用於移除晶片載體20。配合圖2至圖7所示，訊號控制模組M7能夠電性連接於基板承載模組M1、晶片承載模組M2、材料提供模組M3、材料固化模組M5以及材料移除模組M6。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 2 to FIG. 7 , the first embodiment of the present invention provides a wafer transfer apparatus using a wafer transfer method, which includes: a substrate carrier module M1 , a wafer carrier module M2 , and a The material supplying module M3, a material curing module M5, a material removing module M6 and a signal control module M7. Furthermore, as shown in FIG. 2 , FIG. 3 and FIG. 6 , the substrate carrying module M1 can be used to carry or move the circuit substrate 1 , and the chip carrying module M2 can be used to carry or move the chip structure 2 . As shown in FIG. 3 , the material providing module M3 can be used to provide the insulating material S filled between the circuit substrate 1 and the wafer carrier 20 . As shown in FIG. 4 or FIG. 5 , the material curing module M5 can be used to cure the insulating material S. As shown in FIGS. 7 and 8 , the material removal module M6 can be used to remove the wafer carrier 20 . As shown in FIGS. 2 to 7 , the signal control module M7 can be electrically connected to the substrate carrying module M1 , the chip carrying module M2 , the material supplying module M3 , the material curing module M5 and the material removing module M6 . However, the present invention is not limited to the above-mentioned examples.

舉例來說，配合圖2與圖3所示，在提供電路基板1與晶片結構2的步驟S100以及在使晶片結構2與電路基板1彼此靠近的步驟S102中，電路基板1可以是透過一基板承載模組M1而被承載或者移動，並且晶片結構2可以是透過一晶片承載模組M2而被承載或者移動。再者，如圖3所示，在將絕緣材料S填充於電路基板1與晶片載體20之間的步驟S104中，絕緣材料S可以是透過一材料提供模組M3而被提供且填充於電路基板1與晶片載體20之間，並且絕緣材料S可為半固化材料或者完全未固化材料。此外，配合圖3與圖4（或者圖3與圖5）所示，在固化絕緣材料S的步驟S106中，絕緣材料S可以是透過一材料固化模組M5而被固化。另外，配合圖7與圖8所示，在移除晶片載體20的步驟S108中，晶片載體20可以是透過一材料移除模組M6而被移除，並且晶片載體20的移除方式可以是被溶解或者是被剝離(peeling)。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 2 and FIG. 3 , in the step S100 of providing the circuit substrate 1 and the chip structure 2 and the step S102 of bringing the chip structure 2 and the circuit substrate 1 close to each other, the circuit substrate 1 may pass through a substrate The carrier module M1 is carried or moved, and the wafer structure 2 may be carried or moved through a wafer carrier module M2. Furthermore, as shown in FIG. 3 , in the step S104 of filling the insulating material S between the circuit substrate 1 and the chip carrier 20 , the insulating material S may be provided through a material supplying module M3 and filled in the circuit substrate. 1 and the wafer carrier 20, and the insulating material S may be a semi-cured material or a completely uncured material. In addition, as shown in FIG. 3 and FIG. 4 (or FIG. 3 and FIG. 5 ), in the step S106 of curing the insulating material S, the insulating material S may be cured through a material curing module M5 . In addition, as shown in FIGS. 7 and 8 , in the step S108 of removing the wafer carrier 20 , the wafer carrier 20 may be removed by a material removal module M6 , and the removal method of the wafer carrier 20 may be Dissolved or peeled. However, the present invention is not limited to the above-mentioned examples.

舉例來說，如圖3所示，將絕緣材料S填充於電路基板1與晶片載體20之間的步驟S104進一步包括：將絕緣材料S填充於多個晶片21之間，以使得每一晶片21的一周圍表面2101被絕緣材料S所覆蓋。再者，配合圖3、圖4與圖5所示，固化絕緣材料S的步驟S106進一步包括：透過材料固化模組M5所產生的投射光源的照射以固化絕緣材料S，材料固化模組M5可為用於產生紅外線光源的一紅外線產生模組R（如圖4所示）或者是用於產生雷射光源的一雷射光產生模組L（如圖5所示），並且絕緣材料S可為一光固化材料或者一熱固化材料。另外，配合圖3與圖4（或者圖3與圖5）所示，固化絕緣材料S的步驟S106進一步包括：固化多個導電焊接層B，以將多個晶片21固定在電路基板1上，並且每一導電焊接層B位於相對應的晶片21的一導電接點211與電路基板1的一導電焊墊100之間。此外，配合圖6與圖7所示，在移除晶片載體20的步驟S108之前，晶片移轉方法進一步包括：將晶片承載模組M2與晶片結構2分離，以使得晶片載體20被裸露而出。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 3 , the step S104 of filling the insulating material S between the circuit substrate 1 and the chip carrier 20 further includes: filling the insulating material S between the plurality of chips 21 , so that each chip 21 A surrounding surface 2101 of the 2101 is covered with an insulating material S. Furthermore, as shown in FIG. 3 , FIG. 4 and FIG. 5 , the step S106 of curing the insulating material S further includes: curing the insulating material S through the irradiation of the projection light source generated by the material curing module M5 , and the material curing module M5 may is an infrared generating module R (as shown in FIG. 4 ) for generating an infrared light source or a laser light generating module L (as shown in FIG. 5 ) for generating a laser light source, and the insulating material S can be A photocurable material or a thermally curable material. In addition, as shown in FIG. 3 and FIG. 4 (or FIG. 3 and FIG. 5 ), the step S106 of curing the insulating material S further includes: curing the plurality of conductive solder layers B to fix the plurality of chips 21 on the circuit substrate 1 , And each conductive bonding layer B is located between a corresponding conductive contact 211 of the chip 21 and a conductive bonding pad 100 of the circuit substrate 1 . In addition, as shown in FIGS. 6 and 7 , before the step S108 of removing the wafer carrier 20 , the wafer transfer method further includes: separating the wafer carrier module M2 from the wafer structure 2 , so that the wafer carrier 20 is exposed. . However, the present invention is not limited to the above-mentioned examples.

舉例來說，配合圖3與圖8所示，當絕緣材料S為不透光材料時，結構強化層3能夠做為一不透光的隔離層（例如做為白色矩陣的結構強化層3）來使用，以使得透過晶片移轉方法所製作出來的發光二極體封裝結構可以做為能夠應用於影像顯示器的一“背光模組”來使用。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 3 and FIG. 8 , when the insulating material S is an opaque material, the structural reinforcement layer 3 can be used as an opaque isolation layer (for example, as the structural reinforcement layer 3 of the white matrix) so that the light emitting diode package structure fabricated by the wafer transfer method can be used as a "backlight module" which can be applied to an image display. However, the present invention is not limited to the above-mentioned examples.

舉例來說，配合圖2、圖3與圖8所示，電路基板1包括多個導電焊墊100，並且每一晶片21包括一發光本體210、設置在發光本體210的底端上的兩個導電接點211以及分別設置在兩個導電接點211上的兩個導電焊接層B。也就是說，如圖2所示，在將多個晶片21放置在電路基板1上的步驟S102之前，兩個導電焊接層B會預先分別形成在兩個導電接點211上。另外，如圖3所示，在將多個晶片21放置在電路基板1上的步驟S102之後，每一晶片21的兩個導電焊接層B會分別電性接觸相對應的兩個導電焊墊100。值得注意的是，如圖8所示，每一晶片21的一周圍表面2101會被結構強化層3所覆蓋，並且每一晶片21的一上表面2102與結構強化層3的一上表面3000會相互齊平。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 2 , FIG. 3 and FIG. 8 , the circuit substrate 1 includes a plurality of conductive pads 100 , and each chip 21 includes a light-emitting body 210 , two on the bottom of the light-emitting body 210 . The conductive contacts 211 and the two conductive solder layers B respectively disposed on the two conductive contacts 211 . That is, as shown in FIG. 2 , before the step S102 of placing the plurality of chips 21 on the circuit substrate 1 , two conductive solder layers B are formed on the two conductive contacts 211 in advance. In addition, as shown in FIG. 3 , after the step S102 of placing the plurality of chips 21 on the circuit substrate 1 , the two conductive bonding layers B of each chip 21 will electrically contact the corresponding two conductive bonding pads 100 respectively. . It should be noted that, as shown in FIG. 8 , a peripheral surface 2101 of each wafer 21 is covered by the structural strengthening layer 3 , and an upper surface 2102 of each wafer 21 and an upper surface 3000 of the structural strengthening layer 3 are flush with each other. However, the present invention is not limited to the above-mentioned examples.

舉例來說，如圖8所示，電路基板1包括多個導電焊墊100，並且每一晶片21包括一發光本體210以及設置在發光本體210的底端上的兩個導電接點211（但是沒有包括兩個導電焊接層B）。也就是說，在將多個晶片21放置在電路基板1上的步驟S102之前，兩個導電焊接層B會預先分別形成在相對應的兩個導電焊墊100上（圖未示）。另外，在將多個晶片21放置在電路基板1上的步驟S102之後，每一晶片21的兩個導電接點211會分別透過兩個導電焊接層B而分別電性連接於相對應的兩個導電焊墊100。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 8 , the circuit substrate 1 includes a plurality of conductive pads 100 , and each chip 21 includes a light-emitting body 210 and two conductive contacts 211 disposed on the bottom of the light-emitting body 210 (but The two conductive solder layers B) are not included. That is, before the step S102 of placing the plurality of chips 21 on the circuit substrate 1 , the two conductive bonding layers B are respectively formed on the corresponding two conductive bonding pads 100 in advance (not shown). In addition, after the step S102 of placing the plurality of chips 21 on the circuit substrate 1 , the two conductive contacts 211 of each chip 21 are electrically connected to the corresponding two through the two conductive solder layers B, respectively. Conductive pads 100 . However, the present invention is not limited to the above-mentioned examples.

[第二實施例][Second Embodiment]

參閱圖1以及圖9至圖15所示，本發明第二實施例提供一種晶片移轉方法，其包括：首先，配合圖1與圖9所示，提供一電路基板1以及一晶片結構2，晶片結構2包括一晶片載體20以及設置在晶片載體20上的多個晶片21（步驟S200）；接著，配合圖1與圖9所示，將絕緣材料S形成在電路基板1上（步驟S202）；然後，配合圖1與圖10所示，使晶片結構2與電路基板1彼此靠近，以將多個晶片21放置在電路基板1上，而使得絕緣材料S位於電路基板1與晶片載體20之間（步驟S204）；接下來，配合圖1與圖11所示，將多個晶片21固定在電路基板1上（步驟S206）；緊接著，配合圖1與圖12所示，固化絕緣材料S，以形成一結構強化層3於電路基板1與晶片載體20之間（步驟S208）；然後，配合圖1、圖14與圖15所示，移除晶片載體20，而將多個晶片21留在電路基板1上（步驟S210）。值得注意的是，由於結構強化層3可以預先被形成在電路基板1與晶片載體20之間，所以在移除晶片載體20的步驟S210中，多個晶片21可以透過結構強化層3而被穩固地固定在電路基板1上。Referring to FIG. 1 and FIG. 9 to FIG. 15 , a second embodiment of the present invention provides a wafer transfer method, which includes: first, as shown in FIG. 1 and FIG. 9 , a circuit substrate 1 and a chip structure 2 are provided, The wafer structure 2 includes a wafer carrier 20 and a plurality of wafers 21 disposed on the wafer carrier 20 (step S200 ); then, as shown in FIG. 1 and FIG. 9 , an insulating material S is formed on the circuit substrate 1 (step S202 ) 1 and 10, the chip structure 2 and the circuit substrate 1 are brought close to each other to place a plurality of chips 21 on the circuit substrate 1, and the insulating material S is located between the circuit substrate 1 and the chip carrier 20. time (step S204 ); next, as shown in FIGS. 1 and 11 , the plurality of chips 21 are fixed on the circuit substrate 1 (step S206 ); then, as shown in FIGS. 1 and 12 , the insulating material S is cured , to form a structural strengthening layer 3 between the circuit substrate 1 and the chip carrier 20 (step S208 ); then, as shown in FIG. 1 , FIG. 14 and FIG. 15 , remove the chip carrier 20 and leave the plurality of chips 21 behind. on the circuit board 1 (step S210 ). It should be noted that since the structural strengthening layer 3 can be formed between the circuit substrate 1 and the chip carrier 20 in advance, in the step S210 of removing the chip carrier 20 , the plurality of chips 21 can be stabilized through the structural strengthening layer 3 fixed on the circuit board 1.

舉例來說，如圖15所示，當多個晶片21為發光二極體晶片時，多個晶片21可以分別配合多個波長轉換層的使用而提供一影像資訊，所以本發明第二實施例能夠進一步提供一種由晶片移轉方法所製作而成的影像顯示器。另外，當影像顯示器所使用的絕緣材料S為不透光材料時，結構強化層3能夠做為一不透光的隔離層（例如做為黑色矩陣的結構強化層3）來使用。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 15 , when the plurality of chips 21 are light-emitting diode chips, the plurality of chips 21 can be used with a plurality of wavelength conversion layers to provide an image information, so the second embodiment of the present invention It is possible to further provide an image display manufactured by the wafer transfer method. In addition, when the insulating material S used in the image display is an opaque material, the structural reinforcement layer 3 can be used as an opaque isolation layer (eg, the structural reinforcement layer 3 of a black matrix). However, the present invention is not limited to the above-mentioned examples.

舉例來說，配合圖9至圖14所示，本發明第二實施例提供一種使用晶片移轉方法的晶片移轉裝置，其包括：一基板承載模組M1、一晶片承載模組M2、一材料提供模組M3、一晶片固晶模組M4、一材料固化模組M5、一材料移除模組M6以及一訊號控制模組M7。由圖2至圖7與圖9至圖14的比較可知，對於晶片移轉裝置而言，本發明第二實施例與第一實施例最大的差別在於：首先，如圖10所示，由於材料提供模組M3能夠用於提供形成於電路基板1與晶片載體20之間的絕緣材料S，所以在將絕緣材料S形成在電路基板1上的步驟S202中，絕緣材料S可以是透過一材料提供模組M3而被提供且形成在電路基板1上，並且絕緣材料S可為半固化材料或者完全未固化材料。再者，如圖11所示，由於晶片固晶模組M4能夠用於將多個晶片21固定在電路基板1上，所以在將多個晶片21固定在電路基板1上的步驟S206中，多個晶片21可以是透過一晶片固晶模組M4而被固定在電路基板1上。此外，如圖12所示，由於材料固化模組M5能夠用於固化絕緣材料S，所以在固化絕緣材料S的步驟S208中，絕緣材料S可以是透過一材料固化模組M5而被固化。另外，配合圖9至圖14所示，訊號控制模組M7能夠電性連接於基板承載模組M1、晶片承載模組M2、材料提供模組M3、晶片固晶模組M4、材料固化模組M5以及材料移除模組M6。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 9 to FIG. 14 , the second embodiment of the present invention provides a wafer transfer apparatus using a wafer transfer method, which includes: a substrate carrier module M1 , a wafer carrier module M2 , a The material supplying module M3, a chip bonding module M4, a material curing module M5, a material removing module M6 and a signal control module M7. From the comparison of FIGS. 2 to 7 and FIGS. 9 to 14, it can be seen that, for the wafer transfer device, the biggest difference between the second embodiment of the present invention and the first embodiment is: first, as shown in FIG. 10, due to the material The providing module M3 can be used to provide the insulating material S formed between the circuit substrate 1 and the chip carrier 20, so in the step S202 of forming the insulating material S on the circuit substrate 1, the insulating material S may be provided through a material The module M3 is provided and formed on the circuit substrate 1, and the insulating material S may be a semi-cured material or a completely uncured material. Furthermore, as shown in FIG. 11 , since the die bonding module M4 can be used to fix the plurality of chips 21 on the circuit substrate 1 , in step S206 of fixing the plurality of chips 21 on the circuit substrate 1 , many Each of the chips 21 can be fixed on the circuit substrate 1 through a chip bonding module M4. In addition, as shown in FIG. 12 , since the material curing module M5 can be used to cure the insulating material S, in the step S208 of curing the insulating material S, the insulating material S may be cured through a material curing module M5. In addition, as shown in FIG. 9 to FIG. 14 , the signal control module M7 can be electrically connected to the substrate carrying module M1 , the chip carrying module M2 , the material supplying module M3 , the chip bonding module M4 , and the material curing module M5 and material removal module M6. However, the present invention is not limited to the above-mentioned examples.

舉例來說，如圖11所示，將多個晶片21固定在電路基板1上的步驟S206進一步包括：透過晶片固晶模組M4所產生的投射光源照射多個導電焊接層B，以將多個晶片21固定在電路基板1上。更進一步來說，晶片固晶模組M4可為用於產生雷射光源的一雷射光產生模組L或者是用於產生紅外線光源的一紅外線產生模組R，並且每一導電焊接層B位於相對應的晶片21的一導電接點211與電路基板1的一導電焊墊100之間。另外，如圖12所示，固化絕緣材料S的步驟S208進一步包括：透過材料固化模組M5所產生的投射光源的照射以固化絕緣材料S。更進一步來說，材料固化模組M5可為用於產生紅外線光源的一紅外線產生模組R或者是用於產生紫外光源的一紫外光產生模組U，並且絕緣材料S可為一光固化材料或者一熱固化材料。值得注意的是，材料固化模組M5也可以是用於產生雷射光源的一雷射光產生模組L。此外，如圖13所示，在移除晶片載體20的步驟S210之前，晶片移轉方法進一步包括：將晶片承載模組M2與晶片結構2分離，以使得晶片載體20被裸露而出。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 11 , the step S206 of fixing the plurality of chips 21 on the circuit substrate 1 further includes: irradiating the plurality of conductive soldering layers B through the projection light source generated by the chip bonding module M4, so that the plurality of The individual wafers 21 are fixed on the circuit substrate 1 . More specifically, the die bonding module M4 can be a laser light generating module L for generating a laser light source or an infrared generating module R for generating an infrared light source, and each conductive solder layer B is located on the Correspondingly between a conductive contact 211 of the chip 21 and a conductive pad 100 of the circuit substrate 1 . In addition, as shown in FIG. 12 , the step S208 of curing the insulating material S further includes: curing the insulating material S by irradiating the projection light source generated by the material curing module M5 . Furthermore, the material curing module M5 can be an infrared generating module R for generating an infrared light source or an ultraviolet generating module U for generating an ultraviolet light source, and the insulating material S can be a photocurable material. Or a thermally cured material. It should be noted that the material curing module M5 can also be a laser light generating module L for generating a laser light source. In addition, as shown in FIG. 13 , before the step S210 of removing the wafer carrier 20 , the wafer transfer method further includes: separating the wafer carrier module M2 from the wafer structure 2 , so that the wafer carrier 20 is exposed. However, the present invention is not limited to the above-mentioned examples.

舉例來說，配合圖9與圖15所示，當絕緣材料S為不透光材料時，結構強化層3能夠做為一不透光的隔離層（例如做為白色矩陣的結構強化層3）來使用，以使得透過晶片移轉方法所製作出來的發光二極體封裝結構可以做為能夠應用於影像顯示器的一“背光模組”來使用。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 9 and FIG. 15 , when the insulating material S is an opaque material, the structural reinforcement layer 3 can be used as an opaque isolation layer (for example, as the structural reinforcement layer 3 of the white matrix) so that the light emitting diode package structure fabricated by the wafer transfer method can be used as a "backlight module" which can be applied to an image display. However, the present invention is not limited to the above-mentioned examples.

舉例來說，配合圖9、圖10與圖15所示，電路基板1包括多個導電焊墊100，並且每一晶片21包括一發光本體210、設置在發光本體210的底端上的兩個導電接點211以及分別設置在兩個導電接點211上的兩個導電焊接層B。也就是說，如圖9所示，在將多個晶片21放置在電路基板1上的步驟S204之前，兩個導電焊接層B會預先分別形成在兩個導電接點211上。另外，如圖10所示，在將多個晶片21放置在電路基板1上的步驟S204之後，每一晶片21的兩個導電焊接層B會分別電性接觸相對應的兩個導電焊墊100。值得注意的是，如圖15所示，每一晶片21的一周圍表面2101會被結構強化層3所覆蓋，並且每一晶片21的一上表面2102與結構強化層3的一上表面3000會相互齊平。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 9 , FIG. 10 and FIG. 15 , the circuit substrate 1 includes a plurality of conductive pads 100 , and each chip 21 includes a light-emitting body 210 , two light-emitting body 210 disposed on the bottom of the light-emitting body 210 . The conductive contacts 211 and the two conductive solder layers B respectively disposed on the two conductive contacts 211 . That is, as shown in FIG. 9 , before the step S204 of placing the plurality of chips 21 on the circuit substrate 1 , the two conductive solder layers B are respectively formed on the two conductive contacts 211 in advance. In addition, as shown in FIG. 10 , after the step S204 of placing the plurality of chips 21 on the circuit substrate 1 , the two conductive bonding layers B of each chip 21 will electrically contact the corresponding two conductive bonding pads 100 respectively. . It should be noted that, as shown in FIG. 15 , a peripheral surface 2101 of each wafer 21 is covered by the structural strengthening layer 3 , and an upper surface 2102 of each wafer 21 and an upper surface 3000 of the structural strengthening layer 3 are flush with each other. However, the present invention is not limited to the above-mentioned examples.

舉例來說，如圖15所示，電路基板1包括多個導電焊墊100，並且每一晶片21包括一發光本體210以及設置在發光本體210的底端上的兩個導電接點211（但是沒有包括兩個導電焊接層B）。也就是說，在將多個晶片21放置在電路基板1上的步驟S102之前，兩個導電焊接層B會預先分別形成在相對應的兩個導電焊墊100上（圖未示）。另外，在將多個晶片21放置在電路基板1上的步驟S204之後，每一晶片21的兩個導電接點211會分別透過兩個導電焊接層B而分別電性連接於相對應的兩個導電焊墊100。然而，本發明不以上述所舉的例子為限。For example, as shown in FIG. 15 , the circuit substrate 1 includes a plurality of conductive pads 100 , and each chip 21 includes a light-emitting body 210 and two conductive contacts 211 disposed on the bottom of the light-emitting body 210 (but The two conductive solder layers B) are not included. That is, before the step S102 of placing the plurality of chips 21 on the circuit substrate 1 , the two conductive bonding layers B are respectively formed on the corresponding two conductive bonding pads 100 in advance (not shown). In addition, after the step S204 of placing the plurality of chips 21 on the circuit substrate 1 , the two conductive contacts 211 of each chip 21 are electrically connected to the corresponding two through the two conductive solder layers B, respectively. Conductive pads 100 . However, the present invention is not limited to the above-mentioned examples.

[實施例的有益效果][Advantageous effects of the embodiment]

本發明的其中一有益效果在於，本發明所提供的一種晶片移轉方法，其能通過“提供一電路基板1以及一晶片結構2，晶片結構2包括一晶片載體20以及設置在晶片載體20上的多個晶片21”、“提供一絕緣材料S於電路基板1與晶片載體20之間” 、“固化多個導電焊接層B，以將多個晶片21固定在電路基板1上”以及“固化絕緣材料S”的技術方案，以形成一結構強化層3於電路基板1與晶片載體20之間。One of the beneficial effects of the present invention is that a wafer transfer method provided by the present invention can provide a circuit substrate 1 and a wafer structure 2 by "providing a circuit substrate 1 and a wafer structure 2. The wafer structure 2 includes a wafer carrier 20 and is disposed on the wafer carrier 20." multiple chips 21 ”, “provide an insulating material S between the circuit substrate 1 and the chip carrier 20”, “curing multiple conductive solder layers B to fix multiple chips 21 on the circuit substrate 1” and “curing The technical solution of the insulating material S” is to form a structural reinforcement layer 3 between the circuit substrate 1 and the chip carrier 20 .

以上所公開的內容僅為本發明的優選可行實施例，並非因此侷限本發明的申請專利範圍，所以凡是運用本發明說明書及圖式內容所做的等效技術變化，均包含於本發明的申請專利範圍內。The contents disclosed above are only preferred feasible embodiments of the present invention, and are not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.

M1:基板承載模組 M2:晶片承載模組 M3:材料提供模組 M4:晶片固晶模組 M5:材料固化模組 M6:材料移除模組 M7:訊號控制模組 R:紅外線產生模組 L:雷射光產生模組 U:紫外光產生模組 1:電路基板 100:導電焊墊 2:晶片結構 20:晶片載體 21:晶片 2101:周圍表面 2102:上表面 210:發光本體 211:導電接點 B:導電焊接層 3:結構強化層 3000:上表面 S:絕緣材料 M1: Substrate carrier module M2: Chip carrier module M3: Material supply module M4: Chip die-bonding module M5: Material curing module M6: Material Removal Module M7: Signal Control Module R: Infrared generation module L: Laser light generation module U: Ultraviolet light generating module 1: circuit board 100: Conductive pads 2: Chip structure 20: Wafer carrier 21: Wafer 2101: Surrounding Surfaces 2102: Upper surface 210: Luminous body 211: Conductive contacts B: Conductive soldering layer 3: Structural strengthening layer 3000: Top surface S: insulating material

圖1為本發明第一實施例與第二實施例所提供的晶片移轉方法的流程圖。FIG. 1 is a flowchart of the wafer transfer method provided by the first embodiment and the second embodiment of the present invention.

圖2為本發明第一實施例所提供的晶片移轉方法的步驟S100的示意圖。FIG. 2 is a schematic diagram of step S100 of the wafer transfer method provided by the first embodiment of the present invention.

圖3為本發明第一實施例所提供的晶片移轉方法的步驟S102與步驟S104的示意圖。FIG. 3 is a schematic diagram of step S102 and step S104 of the wafer transfer method provided by the first embodiment of the present invention.

圖4為本發明第一實施例所提供的晶片移轉方法的步驟S106使用紅外線產生模組或者紫外光產生模組的示意圖。4 is a schematic diagram of using an infrared generating module or an ultraviolet generating module in step S106 of the wafer transfer method provided by the first embodiment of the present invention.

圖5為本發明第一實施例所提供的晶片移轉方法的步驟S106使用雷射光產生模組的示意圖。5 is a schematic diagram of using a laser light generating module in step S106 of the wafer transfer method provided by the first embodiment of the present invention.

圖6為本發明第一實施例所提供的晶片移轉方法中，將晶片承載模組與晶片結構分離的示意圖。6 is a schematic diagram of separating the wafer carrier module from the wafer structure in the wafer transfer method according to the first embodiment of the present invention.

圖7為本發明第一實施例所提供的晶片移轉方法的步驟S108執行前的示意圖。FIG. 7 is a schematic diagram before step S108 of the wafer transfer method provided by the first embodiment of the present invention is executed.

圖8為本發明第一實施例所提供的晶片移轉方法的步驟S108執行後的示意圖。FIG. 8 is a schematic diagram after step S108 of the wafer transfer method provided by the first embodiment of the present invention is executed.

圖9為本發明第二實施例所提供的晶片移轉方法的步驟S200與步驟S202的示意圖。FIG. 9 is a schematic diagram of step S200 and step S202 of the wafer transfer method provided by the second embodiment of the present invention.

圖10為本發明第二實施例所提供的晶片移轉方法的步驟S204的示意圖。FIG. 10 is a schematic diagram of step S204 of the wafer transfer method provided by the second embodiment of the present invention.

圖11為本發明第二實施例所提供的晶片移轉方法的步驟S206的示意圖。FIG. 11 is a schematic diagram of step S206 of the wafer transfer method provided by the second embodiment of the present invention.

圖12為本發明第二實施例所提供的晶片移轉方法的步驟S208的示意圖。FIG. 12 is a schematic diagram of step S208 of the wafer transfer method provided by the second embodiment of the present invention.

圖13為本發明第二實施例所提供的晶片移轉方法中，將晶片承載模組與晶片結構分離的示意圖。13 is a schematic diagram of separating the wafer carrier module from the wafer structure in the wafer transfer method according to the second embodiment of the present invention.

圖14為本發明第二實施例所提供的晶片移轉方法的步驟S210執行前的示意圖。FIG. 14 is a schematic diagram before step S210 of the wafer transfer method provided by the second embodiment of the present invention is performed.

圖15為本發明第二實施例所提供的晶片移轉方法的步驟S210執行後的示意圖。FIG. 15 is a schematic diagram after step S210 of the wafer transfer method provided by the second embodiment of the present invention is executed.

Claims

一種晶片移轉方法，其包括：提供一電路基板以及一晶片結構，所述晶片結構包括一晶片載體以及設置在所述晶片載體上的多個晶片；提供一絕緣材料於所述電路基板與所述晶片載體之間；固化多個導電焊接層，以將多個所述晶片固定在所述電路基板上；以及固化所述絕緣材料，以形成一結構強化層於所述電路基板與所述晶片載體之間。 A wafer transfer method, comprising: A circuit substrate and a chip structure are provided, the chip structure includes a chip carrier and a plurality of chips arranged on the chip carrier; providing an insulating material between the circuit substrate and the chip carrier; curing a plurality of conductive solder layers to secure a plurality of the wafers on the circuit substrate; and The insulating material is cured to form a structural reinforcement layer between the circuit substrate and the chip carrier.

如請求項1所述的晶片移轉方法，其中，提供所述絕緣材料於所述電路基板與所述晶片載體之間的步驟進一步包括：使所述晶片結構與所述電路基板彼此靠近，以將多個所述晶片放置在所述電路基板上；以及將所述絕緣材料填充於所述電路基板與所述晶片載體之間。 The wafer transfer method of claim 1, wherein the step of providing the insulating material between the circuit substrate and the wafer carrier further comprises: bringing the wafer structure and the circuit substrate into close proximity to each other to place a plurality of the wafers on the circuit substrate; and The insulating material is filled between the circuit substrate and the wafer carrier.

如請求項1所述的晶片移轉方法，其中，提供所述絕緣材料於所述電路基板與所述晶片載體之間的步驟進一步包括：將所述絕緣材料形成在所述電路基板上；以及使所述晶片結構與所述電路基板彼此靠近，以將多個所述晶片放置在所述電路基板上，而使得所述絕緣材料位於所述電路基板與所述晶片載體之間。 The wafer transfer method of claim 1, wherein the step of providing the insulating material between the circuit substrate and the wafer carrier further comprises: forming the insulating material on the circuit substrate; and The wafer structure and the circuit substrate are brought close to each other to place a plurality of the wafers on the circuit substrate with the insulating material between the circuit substrate and the wafer carrier.

如請求項1所述的晶片移轉方法，其中，在固化所述絕緣材料的步驟之後，所述晶片移轉方法進一步包括：移除所述晶片載體，而將多個所述晶片留在所述電路基板上。The wafer transfer method of claim 1, wherein, after the step of curing the insulating material, the wafer transfer method further comprises: removing the wafer carrier while leaving a plurality of the wafers in place on the circuit board.

如請求項1所述的晶片移轉方法，其中，將多個所述晶片固定在所述電路基板上的步驟進一步包括：透過一晶片固晶模組所產生的投射光源照射多個所述導電焊接層，以將多個所述晶片固定在所述電路基板上；其中，所述晶片固晶模組為用於產生雷射光源的一雷射光產生模組或者用於產生紅外線光源的一紅外線產生模組。The wafer transfer method according to claim 1, wherein the step of fixing a plurality of the wafers on the circuit substrate further comprises: irradiating the plurality of the conductive wafers through a projection light source generated by a wafer bonding module a soldering layer to fix a plurality of the chips on the circuit substrate; wherein the chip bonding module is a laser light generating module for generating a laser light source or an infrared light generating module for generating an infrared light source Generate modules.

如請求項1所述的晶片移轉方法，其中，固化所述絕緣材料的步驟進一步包括：透過一材料固化模組所產生的投射光源的照射以固化所述絕緣材料；其中，所述材料固化模組為用於產生紅外線光源的一紅外線產生模組、用於產生雷射光源的一雷射光產生模組或者用於產生紫外光源的一紫外光產生模組，且所述絕緣材料為一光固化材料或者一熱固化材料。The wafer transfer method of claim 1, wherein the step of curing the insulating material further comprises: curing the insulating material by irradiating a projection light source generated by a material curing module; wherein the material is cured The module is an infrared generating module for generating an infrared light source, a laser light generating module for generating a laser light source, or an ultraviolet light generating module for generating an ultraviolet light source, and the insulating material is a light Cured material or a thermally cured material.

如請求項1所述的晶片移轉方法，其中，所述絕緣材料為半固化材料或者完全未固化材料；其中，所述絕緣材料為透光材料或者不透光材料，且所述不透光材料為黑色材料或者白色材料。The wafer transfer method according to claim 1, wherein the insulating material is a semi-cured material or a completely uncured material; wherein the insulating material is a light-transmitting material or an opaque material, and the opaque material is The material is black material or white material.

一種影像顯示器，所述影像顯示器是由如請求項1所述的晶片移轉方法所製作而成。An image display, the image display is manufactured by the wafer transfer method according to claim 1.

一種晶片移轉裝置，所述晶片移轉裝置使用如請求項1所述的晶片移轉方法，所述晶片移轉裝置包括：一基板承載模組，所述基板承載模組用於承載或者移動所述電路基板；一晶片承載模組，所述晶片承載模組用於承載或者移動所述晶片結構；一材料提供模組，所述材料提供模組用於提供填充於所述電路基板與所述晶片載體之間的所述絕緣材料；一材料固化模組，所述材料固化模組用於固化所述絕緣材料；以及一訊號控制模組，所述訊號控制模組電性連接於所述基板承載模組、所述晶片承載模組、所述材料提供模組以及所述材料固化模組。 A wafer transfer device using the wafer transfer method according to claim 1, the wafer transfer device comprising: a substrate carrying module, the substrate carrying module is used for carrying or moving the circuit substrate; a wafer carrying module, the wafer carrying module is used for carrying or moving the wafer structure; a material providing module for providing the insulating material filled between the circuit substrate and the chip carrier; a material curing module for curing the insulating material; and a signal control module, the signal control module is electrically connected to the substrate carrying module, the chip carrying module, the material supplying module and the material curing module.

如請求項9所述的晶片移轉裝置，進一步包括：一晶片固晶模組，所述晶片固晶模組用於將多個所述晶片固定在所述電路基板上；以及一材料移除模組，所述材料移除模組用於移除所述晶片載體。 The wafer transfer device of claim 9, further comprising: a die-bonding module for chips, the die-bonding module for fixing a plurality of the chips on the circuit substrate; and a material removal module for removing the wafer carrier.