TW202209352A - Structure, method for manufacturing structure, method for manufacturing assembly, and method for manufacturing device - Google Patents
Structure, method for manufacturing structure, method for manufacturing assembly, and method for manufacturing device Download PDFInfo
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- TW202209352A TW202209352A TW110128957A TW110128957A TW202209352A TW 202209352 A TW202209352 A TW 202209352A TW 110128957 A TW110128957 A TW 110128957A TW 110128957 A TW110128957 A TW 110128957A TW 202209352 A TW202209352 A TW 202209352A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
Abstract
Description
本發明有關一種結構體、結構體的製造方法、接合體的製造方法及器件的製造方法，在該結構體中，沿陽極氧化膜的厚度方向貫通且以彼此電絕緣之狀態設置之複數個導體從陽極氧化膜的厚度方向上之至少一側表面突出，並且由樹脂層局部覆蓋陽極氧化膜的導體突出之表面。The present invention relates to a structure in which a plurality of conductors penetrate in the thickness direction of an anodic oxide film and are provided in a state of being electrically insulated from each other, a method for manufacturing a structure, a method for manufacturing a joint, and a method for manufacturing a device It protrudes from at least one surface in the thickness direction of the anodized film, and the surface of the conductor protrusion of the anodized film is partially covered with a resin layer.
在設置於絕緣性基材上之複數個貫通孔中填充金屬等導電性物質而成之結構體為近年來在奈米技術中亦受到注目之領域之一，例如作為各向異性導電性構件的用途備受期待。 各向異性導電性構件僅藉由***到半導體元件等電子組件與電路基板之間並進行加壓而獲得電子組件與電路基板之間的電連接，因此作為半導體元件等電子組件等的電連接構件及進行功能檢查時的檢查用連接器等被廣泛使用。 尤其，半導體元件等電子組件的小型化明顯。在如先前引線接合（wire bonding）那樣的直接連接配線基板之方式、倒裝焊接（flip chip bonding）及熱壓結合（thermo compression bonding）等中，有時無法充分保證電子組件的電連接的穩定性，因此作為電子連接構件，各向異性導電性構件受到注目。A structure in which a plurality of through-holes provided on an insulating substrate is filled with a conductive substance such as metal is one of the fields that has also attracted attention in nanotechnology in recent years. For example, it is used as an anisotropic conductive member. The use is highly anticipated. The anisotropic conductive member is used as an electrical connection member for electronic components such as semiconductor elements and the like to obtain electrical connection between the electronic component and the circuit board only by being inserted between the electronic component such as a semiconductor element and the circuit board and pressurized It is widely used as an inspection connector for functional inspection. In particular, the miniaturization of electronic components such as semiconductor elements is remarkable. In the conventional method of directly connecting wiring boards such as wire bonding, flip chip bonding, thermocompression bonding, etc., the stability of electrical connection of electronic components may not be sufficiently ensured. Therefore, anisotropic conductive members have attracted attention as electronic connection members.
作為各向異性導電性構件，例如，在專利文獻1中，記載有一種各向異性導電性接合構件，其具備絕緣性基材、由導電性構件形成之複數個導通路及設置於絕緣性基材表面的整個表面上之樹脂層。樹脂層含有熱硬化性樹脂。導通路以彼此絕緣之狀態沿厚度方向貫通絕緣性基材而設置。導通路具有從絕緣性基材的表面突出之突出部分，突出部分的端部埋設於樹脂層中。As an anisotropic conductive member, for example,
[專利文獻1]日本特開2018-37509號公報[Patent Document 1] Japanese Patent Laid-Open No. 2018-37509
如上述專利文獻1，在將樹脂層設置於絕緣性基材表面的整個表面上之結構中，無法釋放所產生之靜電。因此，在藉由帶電輸送各向異性導電性構件時，存在難以處理等問題點，如離不開輸送臂等。
又，在將樹脂層設置於絕緣性基材表面的整個表面上之結構中，在將各向異性導電性構件***到半導體元件等電子組件與電路基板之間並進行加壓接合時，需要從接合部排除設置於整個表面上之樹脂層的剩餘部分，存在加壓時需要很大的力等問題點。As in the above-mentioned
本發明的目的在於提供一種能夠抑制帶電並進一步減小接合時所需的力之結構體、結構體的製造方法、接合體的製造方法及器件的製造方法。An object of the present invention is to provide a structure capable of suppressing electrification and further reducing the force required for bonding, a method for producing the structure, a method for producing a bonding body, and a method for producing a device.
為了實現上述目的，本發明的一態樣提供一種結構體，其係具有絕緣膜及沿厚度方向貫通絕緣膜且以彼此電絕緣之狀態設置之複數個導體，導體從絕緣膜的厚度方向上之至少一側表面突出，並且結構體具有局部覆蓋絕緣膜的導體突出之表面之樹脂層。In order to achieve the above object, one aspect of the present invention provides a structure having an insulating film and a plurality of conductors penetrating the insulating film in a thickness direction and provided in a state of being electrically insulated from each other, the conductors extending from a distance in the thickness direction of the insulating film At least one side surface is protruded, and the structure has a resin layer partially covering the surface of the conductor protruding surface of the insulating film.
導體分別從絕緣膜的厚度方向上之兩面突出，樹脂層分別局部覆蓋絕緣膜的厚度方向上之兩面的各表面為較佳。 導體的平均突出長度小於樹脂層的平均厚度為較佳。 在將由樹脂層覆蓋之絕緣膜的面積設為Sa、將沒有設置樹脂層的絕緣膜的面積設為Sb、將導體的平均突出高度設為Hd、將樹脂層的平均厚度設為hm時，滿足0.7≤（Sb×2/3×Hd）/（Sa×（hr-Hd））≤1.5為較佳。 樹脂層由微細圖案形成為較佳。 設置於絕緣膜的厚度方向上之兩面上之樹脂層分別以相同的圖案形成為較佳。 絕緣膜由陽極氧化膜構成為較佳。It is preferable that the conductors protrude from both surfaces in the thickness direction of the insulating film, and the resin layers respectively partially cover the surfaces of the both surfaces in the thickness direction of the insulating film. The average protruding length of the conductor is preferably smaller than the average thickness of the resin layer. When Sa is the area of the insulating film covered with the resin layer, Sb is the area of the insulating film without the resin layer, Hd is the average protruding height of the conductor, and the average thickness of the resin layer is hm, the satisfaction 0.7≤(Sb×2/3×Hd)/(Sa×(hr-Hd))≤1.5 is preferable. The resin layer is preferably formed in a fine pattern. Preferably, the resin layers provided on both surfaces in the thickness direction of the insulating film are formed in the same pattern, respectively. The insulating film is preferably composed of an anodized film.
本發明的另一態樣提供一種結構體的製造方法，該方法具有：在具有沿厚度方向延伸之複數個細孔之絕緣膜中填充導電性物質而形成導體之步驟；突出步驟，使導體從絕緣膜的厚度方向上之至少一側表面突出；及形成步驟，在絕緣膜的導體突出之表面上局部形成樹脂層。 樹脂層的形成步驟使用噴墨法為較佳。 樹脂層的形成步驟在絕緣膜的導體突出之表面的整個表面上形成樹脂層之後，局部去除為較佳。 樹脂層的形成步驟在絕緣膜的導體突出之表面的整個表面上形成樹脂層之後，局部去除形成於絕緣膜的端部之樹脂層為較佳。 導體的突出步驟為使導體分別從絕緣膜的厚度方向上之兩面突出之步驟，樹脂層的形成步驟在絕緣膜的厚度方向上之兩面的各表面上分別局部形成樹脂層為較佳。 導體的平均突出長度小於樹脂層的平均厚度為較佳。Another aspect of the present invention provides a method of manufacturing a structure, the method comprising: a step of filling an insulating film having a plurality of pores extending in the thickness direction with a conductive substance to form a conductor; and a protruding step of making the conductor from At least one surface in the thickness direction of the insulating film protrudes; and in the forming step, a resin layer is partially formed on the surface of the insulating film where the conductor protrudes. The step of forming the resin layer preferably uses an ink jet method. In the step of forming the resin layer, it is preferable to partially remove the resin layer after forming the resin layer on the entire surface of the surface where the conductors of the insulating film protrude. In the step of forming the resin layer, it is preferable to partially remove the resin layer formed on the end of the insulating film after forming the resin layer on the entire surface of the surface where the conductors of the insulating film protrude. The conductor protruding step is a step of making the conductors protrude from both sides of the insulating film in the thickness direction, and the resin layer forming step is preferably a resin layer formed locally on each of the surfaces of the insulating film thickness direction. The average protruding length of the conductor is preferably smaller than the average thickness of the resin layer.
在將由樹脂層覆蓋之絕緣膜的面積設為Sa、將沒有設置樹脂層的絕緣膜的面積設為Sb、將導體的平均突出高度設為Hd、將樹脂層的平均厚度設為hm時，滿足0.7≤（Sb×2/3×Hd）/（Sa×（hr-Hd））≤1.5為較佳。 形成步驟在絕緣膜的厚度方向上之兩面上分別以相同的圖案形成樹脂層為較佳。 絕緣膜由陽極氧化膜構成為較佳。When Sa is the area of the insulating film covered with the resin layer, Sb is the area of the insulating film without the resin layer, Hd is the average protruding height of the conductor, and the average thickness of the resin layer is hm, the satisfaction 0.7≤(Sb×2/3×Hd)/(Sa×(hr-Hd))≤1.5 is preferable. In the forming step, it is preferable to form the resin layer in the same pattern on both surfaces in the thickness direction of the insulating film. The insulating film is preferably composed of an anodized film.
本發明的另一態樣提供一種接合體的製造方法，該方法具有接合步驟，該接合步驟藉由使結構體的導體與導電部接觸而接合具備具有導電性之導電部之導電構件與本發明的結構體。 本發明的另一態樣提供一種器件的製造方法，該方法具有接合步驟，該接合步驟藉由使結構體的導體與半導體元件的電極接觸而接合具有電極之半導體元件與本發明的結構體。 [發明效果]Another aspect of the present invention provides a manufacturing method of a joined body, the method having a joining step of joining a conductive member having a conductive portion having conductivity to the present invention by bringing a conductor of the structure into contact with the conductive portion 's structure. Another aspect of the present invention provides a method of manufacturing a device having a bonding step of bonding a semiconductor element having an electrode and the structure of the present invention by bringing a conductor of the structure into contact with an electrode of the semiconductor element. [Inventive effect]
依據本發明，能夠抑制帶電並進一步減小接合時所需的力。 又，依據本發明，能夠獲得能夠抑制帶電並進一步減小接合時所需的力之結構體。 又，依據本發明，能夠抑制帶電並進一步減小接合時所需的力而製造接合體。 又，依據本發明，能夠抑制帶電並進一步減小接合時所需的力而製造器件。According to the present invention, it is possible to suppress the electrification and further reduce the force required for bonding. Furthermore, according to the present invention, it is possible to obtain a structure capable of suppressing electrification and further reducing the force required for bonding. Furthermore, according to the present invention, it is possible to suppress electrification and further reduce the force required for bonding, thereby producing a bonded body. In addition, according to the present invention, a device can be manufactured by suppressing electrification and further reducing the force required for bonding.
以下，依據圖式所示之較佳實施形態，對本發明的結構體、結構體的製造方法、接合體的製造方法及器件的製造方法進行詳細說明。 再者，以下所說明之圖為用於說明本發明之例示性者，本發明並不限定於以下所示之圖。 再者，在以下中，表示數值範圍之“～”包含在兩側所記載之數值。例如，εa 為數值αb ～數值βc 是指εa 的範圍為包含數值αb 和數值βc 之範圍，若用數學記號表示，則αb ≤εa ≤βc 。 關於溫度及時間，除非另有記載，則包含在相應之技術領域中通常允許之誤差範圍。Hereinafter, the structure, the method for manufacturing the structure, the method for manufacturing the joined body, and the method for manufacturing the device of the present invention will be described in detail based on the preferred embodiments shown in the drawings. In addition, the drawings described below are exemplary ones for explaining the present invention, and the present invention is not limited to the drawings shown below. In addition, in the following, "-" which shows a numerical range includes the numerical value described on both sides. For example, ε a is a numerical value α b to a numerical value β c , which means that the range of ε a is a range including the numerical value α b and the numerical value β c , and when expressed in mathematical notation, α b ≤ ε a ≤ β c . Regarding the temperature and time, unless otherwise stated, the error range generally allowed in the corresponding technical field is included.
[結構體的一例]
圖1係表示本發明的實施形態的細結構體的一例之示意性剖面圖，圖2係表示本發明的實施形態的細結構體的一例之示意性俯視圖。圖2係從圖1的陽極氧化膜的表面側進行觀察之俯視圖，並且表示沒有樹脂層20的狀態。
圖1所示之結構體10具有：絕緣膜12，具有電絕緣性；及複數個導體14，沿厚度方向Dt貫通絕緣膜12且以彼此電絕緣之狀態設置。導體14從絕緣膜12的厚度方向Dt上之至少一側表面突出。在導體14從絕緣膜12的厚度方向Dt上之至少一側表面突出之情況下，在從單側的表面突出之結構中，從表面12a或背面12b突出為較佳。
結構體10具有樹脂層20，該樹脂層20局部覆蓋絕緣膜12的導體14突出之表面。亦即，樹脂層20沒有設置於絕緣膜12的表面12a的整個表面及背面12b的整個表面上，而是局部設置於絕緣膜12的表面12a上，並且局部設置於絕緣膜12的背面12b上。絕緣膜12例如由陽極氧化膜15構成。[An example of a structure]
FIG. 1 is a schematic cross-sectional view showing an example of the fine structure according to the embodiment of the present invention, and FIG. 2 is a schematic plan view showing an example of the fine structure according to the embodiment of the present invention. FIG. 2 is a plan view viewed from the surface side of the anodized film of FIG. 1 , and shows a state in which the
複數個導體14以彼此電絕緣之狀態配置於絕緣膜12上。此時，例如，絕緣膜12具有沿厚度方向Dt貫通之複數個細孔13。在複數個細孔13中設置有導體14。導體14從絕緣膜12的厚度方向Dt上之表面12a突出。
又，導體14從絕緣膜12的厚度方向Dt上之背面12b突出。結構體具有樹脂層20，該樹脂層20局部覆蓋絕緣膜12的導體14突出之表面。
樹脂層20具有樹脂層部20a和空間20b。樹脂層20在絕緣膜12的表面12a上隔開空間20b而局部配置有樹脂層部20a，樹脂層部20a覆蓋導體14的突出部14a。突出部14a埋設於樹脂層部20a中。
又，在絕緣膜12的背面12b上隔開空間20b而局部配置有樹脂層部20a，樹脂層部20a覆蓋導體14的突出部14b。突出部14b埋設於樹脂層部20a中。結構體10具有各向異性導電性，在厚度方向Dt上具有導電性，但是在與絕緣膜12的表面12a平行的方向上之導電性充分低。The plurality of
如圖2所示，例如結構體10的外形為矩形。再者，結構體10的外形並不限定於矩形，例如可以為圓形。結構體10的外形能夠設為與用途、製作容易度等對應之形狀。As shown in FIG. 2 , the external shape of the
藉由將結構體10設為如上所述具有局部覆蓋絕緣膜12的導體14突出之表面之樹脂層20之結構，在樹脂層20中存在空間20b，因此能夠釋放所產生之靜電，從而抑制帶電。藉此，在輸送結構體10等時抑制帶電，從而處理變得良好。
進而，樹脂層20局部設置於絕緣膜12的表面上，在將結構體10***到半導體元件等電子組件與電路基板之間並進行加壓接合時，能夠減少要排除之樹脂層20，加壓時不需要很大的力，從而能夠減小接合時所需之力。因此，例如能夠抑制接合裝置的大型化。By setting the
以下，對結構體的結構進行更具體的說明。
〔絕緣膜〕
絕緣膜12為將由導電體構成之複數個導體14以彼此電絕緣之狀態設置者，絕緣膜具有電絕緣性。又，絕緣膜12具有形成導體14之複數個細孔13。
絕緣膜例如由無機材料形成。關於絕緣膜，例如能夠使用具有1014
Ω・cm左右的電阻率者。
再者，“由無機材料形成”為用於與高分子材料區別之規定，其係將無機材料作為主成分（50質量%以上）之規定，而不是限定於僅由無機材料構成之絕緣性基材之規定。如上所述，例如絕緣膜由陽極氧化膜構成。
又，絕緣膜例如亦能夠由金屬氧化物、金屬氮化物、玻璃、碳化矽、氮化矽等陶瓷、類金剛石碳等碳基材、聚醯亞胺、該等的複合材料等構成。作為絕緣膜，除此以外，例如可以為在具有貫通孔之有機材料上由包含50質量%以上的陶瓷材料或碳材料之無機材料成膜者。Hereinafter, the structure of the structure will be described in more detail. [Insulating Film] The insulating
絕緣膜12的厚度方向Dt上之長度亦即絕緣膜12的厚度在1～1000μm的範圍內為較佳，在5～500μm的範圍內為更佳，在10～300μm的範圍內為進一步較佳。若絕緣膜12的厚度在該範圍內，則絕緣膜12的處理性變得良好。
從捲取容易度的觀點考慮，絕緣膜12的厚度ht為30μm以下為較佳，5～20μm為更佳。
再者，陽極氧化膜的厚度為如下值：藉由聚焦離子束（Focused Ion Beam：FIB）對陽極氧化膜在厚度方向Dt上進行切削加工，藉由場發射掃描式電子顯微鏡（FE-SEM）對其截面拍攝表面照片（倍率5万倍），並作為測定10個點而獲得之平均值計算出之值。
絕緣膜12中之各導體14的間隔為5nm～800nm為較佳，10nm～200nm為更佳，20nm～60nm為進一步較佳。若絕緣膜12中之各導體14的間隔在上述範圍內，則絕緣膜12作為導體14的電絕緣性的間隔壁而充分發揮功能。
其中，各導體的間隔是指相鄰之導體之間的寬度，並且是指藉由場發射掃描式電子顯微鏡以20万倍的倍率觀察結構體10的截面，在10個點上測定相鄰之導體之間的寬度而獲得之平均值。The length of the insulating
＜細孔的平均直徑＞
細孔的平均直徑為1μm以下為較佳，5～500nm為更佳，20～400nm為進一步較佳，40～200nm為更進一步較佳，50～100nm為最佳。細孔13的平均直徑d為1μm以下，若在上述範圍內，則能夠獲得具有上述平均直徑之導體14。
關於細孔13的平均直徑，使用掃描式電子顯微鏡從正上方以倍率100～10000倍拍攝絕緣膜12的表面而獲得攝影圖像。在攝影圖像中，抽取至少20個周圍連接成環狀之細孔，測定其直徑並設為開口直徑，計算出該等開口直徑的平均值作為細孔的平均直徑。
再者，關於倍率，能夠適當選擇上述範圍內的倍率，以獲得能夠抽取20個以上的細孔之攝影圖像。又，開口直徑測定細孔部分的端部之間的距離的最大值。亦即，細孔的開口部的形狀並不限定於大致圓形，因此在開口部的形狀為非圓形的情況下，將細孔部分的端部之間的距離的最大值設為開口直徑。因此，例如，即使在如使2個以上的細孔一體化的形狀的細孔的情況下，亦將其視為1個細孔，並將細孔部分的端部之間的距離的最大值設為開口直徑。<Average diameter of pores>
The average diameter of the pores is preferably 1 μm or less, more preferably 5 to 500 nm, more preferably 20 to 400 nm, still more preferably 40 to 200 nm, and most preferably 50 to 100 nm. The average diameter d of the
〔導體〕
如上所述，複數個導體14在陽極氧化膜上以彼此電絕緣之狀態設置。
複數個導體14具有導電性。導體由導電性物質構成。導電性物質並無特別限定，可以舉出金屬。作為金屬的具體例，可以較佳地例示出金（Au）、銀（Ag）、銅（Cu）、鋁（Al）、鎂（Mg）及鎳（Ni）等。從導電性的觀點考慮，銅、金、鋁及鎳為較佳，銅及金為更佳，銅為最佳。
除了金屬以外，還可以舉出氧化物導電物質。作為氧化物導電物質，例如可以例示出摻雜有銦之錫氧化物（ITO）等。然而，與氧化物導電體相比，金屬的延展性等優異而容易變形，即使在接合時的壓縮中亦容易變形，因此由金屬構成為較佳。
又，例如，亦能夠由Cu或Ag等含有奈米粒子之導電性樹脂構成導體。
厚度方向Dt上之導體14的高度H為10～300μm為較佳，20～30μm為更佳。〔conductor〕
As described above, the plurality of
＜導體的形狀＞
導體14的平均直徑d為1μm以下為較佳，5～500nm為更佳，20～400nm為進一步較佳，40～200nm為更進一步較佳，50～100nm為最佳。
導體14的密度為2万個/mm2
以上為較佳，200万個/mm2
以上為更佳，1000万個/mm2
以上為進一步較佳，5000万個/mm2
以上為特佳，1億個/mm2
以上為最佳。
進而，相鄰之各導體14的中心間距離p為20nm～500nm為較佳，40nm～200nm為更佳，50nm～140nm為進一步較佳。
關於導體的平均直徑，使用掃描式電子顯微鏡從正上方以倍率100～10000倍拍攝陽極氧化膜的表面而獲得攝影圖像。在攝影圖像中，抽取至少20個周圍連接成環狀之導體，測定其直徑並設為開口直徑，計算出該等開口直徑的平均值作為導體的平均直徑。
再者，關於倍率，能夠適當選擇上述範圍內的倍率，以獲得能夠抽取20個以上的導體之攝影圖像。又，開口直徑測定導體部分的端部之間的距離的最大值。亦即，導體的開口部的形狀並不限定於大致圓形，因此在開口部的形狀為非圓形的情況下，將導體部分的端部之間的距離的最大值設為開口直徑。因此，例如，即使在如使2個以上的導體一體化的形狀的導體的情況下，亦將其視為1個導體，並將導體部分的端部之間的距離的最大值設為開口直徑。<Conductor Shape> The average diameter d of the
＜突出部＞
突出部為導體的一部分，並且為柱狀。從能夠增加與接合對象的接觸面積之觀點考慮，突出部為圓柱狀為較佳。
突出部14a的平均突出長度ha及突出部14b的平均長度hb為30nm～500nm為較佳，作為上限值，100nm以下為更佳。
突出部14a的平均突出長度ha及突出部14b的平均長度hb為如下值：如上所述，使用場發射掃描式電子顯微鏡獲取突出部的截面圖像，依據截面圖像，分別測定10個點的突出部的高度而測定出之平均值。<Projection>
The protrusion is a part of the conductor and has a columnar shape. From the viewpoint of being able to increase the contact area with the bonding object, the protruding portion is preferably cylindrical.
The average protrusion length ha of the
〔樹脂層〕
如上所述，樹脂層局部設置於陽極氧化膜的表面及背面中的至少一側表面上，例如埋設導體的突出部者。亦即，樹脂層被覆從陽極氧化膜突出之導體的端部並保護突出部。
為了發揮上述功能，樹脂層例如為在50℃～200℃的溫度範圍內顯示出流動性且在200℃以上的溫度下硬化者為較佳。對樹脂層將在後面進行詳細說明。
如上所述，樹脂層為具有樹脂層部20a和空間20b之結構，並且樹脂層部20a以圖案狀設置。[Resin layer]
As described above, the resin layer is partially provided on at least one of the front and back surfaces of the anodized film, for example, where the protruding portion of the conductor is embedded. That is, the resin layer coats the end portion of the conductor protruding from the anodized film and protects the protruding portion.
In order to exhibit the above-mentioned function, it is preferable that the resin layer exhibits fluidity in a temperature range of, for example, 50°C to 200°C and is cured at a temperature of 200°C or higher. The resin layer will be described in detail later.
As described above, the resin layer has a structure having the
其中，圖3係表示本發明的實施形態的結構體的樹脂層的圖案的第1例之示意性俯視圖，圖4係表示本發明的實施形態的結構體的樹脂層的圖案的第2例之示意性俯視圖。圖5係表示本發明的實施形態的結構體的樹脂層的圖案的第3例之示意性俯視圖，圖6係表示本發明的實施形態的結構體的樹脂層的微細圖案的一例之示意性俯視圖。
圖3～圖6表示從絕緣膜12的表面12a側進行觀察之樹脂層20、21、22，並省略導體14的圖示。再者，將從絕緣膜12的表面12a側進行觀察之情況亦稱為俯視。再者，圖3～圖6所示之X方向與Y方向正交。3 is a schematic plan view showing a first example of the pattern of the resin layer of the structure according to the embodiment of the present invention, and FIG. 4 is a second example showing the pattern of the resin layer of the structure according to the embodiment of the present invention. Schematic top view. 5 is a schematic plan view showing a third example of the pattern of the resin layer of the structure according to the embodiment of the present invention, and FIG. 6 is a schematic plan view showing an example of the fine pattern of the resin layer of the structure according to the embodiment of the present invention .
3 to 6 show the resin layers 20 , 21 , and 22 viewed from the
關於樹脂層20，例如，如圖3所示，在俯視下，樹脂層部20a為矩形，空間20b亦為矩形。矩形的樹脂層部20a在X方向上隔開空間20b而配置複數個。在Y方向上相鄰而配置之樹脂層部20a與空間20b相鄰而配置，樹脂層部20a配置成在Y方向上不與空間20b直接接觸。圖3所示之樹脂層20的樹脂層部20a和空間20b的形狀及大小相同。在樹脂層20中，藉由樹脂層部20a和空間20b的數量來調整後述由樹脂層覆蓋之絕緣膜的面積Sa和沒有設置樹脂層的絕緣膜的面積Sb。再者，在將由樹脂層被覆之絕緣膜的區域Rs的面積設為S時，Sa/S為樹脂層的被覆率γc。亦即，Sa/S=γc。
又，例如，如圖4所示，在俯視下，樹脂層部20a為圓形，並且彼此隔開空間20b而配置。在圖4所示之樹脂層20中，藉由由樹脂層被覆之絕緣膜的區域Rs中之、圓形的樹脂層部20a的大小和數量來調整後述由樹脂層覆蓋之絕緣膜的面積Sa，從而調整被覆率γc。Regarding the
並不限定於上述圖3及圖4所示之樹脂層20，作為樹脂層的圖案，亦可以為如圖5所示之樹脂層21，在俯視下，在樹脂層部20a內將空間20b以開口部的方式設置之結構。在圖5所示之樹脂層21的結構中，能夠藉由由樹脂層被覆之絕緣膜的區域Rs中之空間20b的大小和空間20b的數量來調整俯視下之樹脂層部20a的面積。藉此，能夠調整被覆率γc。
再者，樹脂層部20a的形狀並不限定於上述矩形及圓形。又，樹脂層20的圖案可以為同心圓狀的圖案。The pattern of the resin layer is not limited to the
在樹脂層20中，為了提高被覆率γc，不是單純地減小沒有設置樹脂層的絕緣膜的面積亦即空間的總面積，而是如減小圖案本身亦即樹脂層部且縮小空間的圖案為較佳。
樹脂層20可以具有微細圖案。藉由將樹脂層20設為微細圖案，空間20b變小，在接合時，樹脂層部的流動距離變短，因此為較佳。其中，微細圖案是指上述樹脂層部小且空間窄的圖案。
作為微細圖案，例如存在各空間的面積小於樹脂層部的面積且在樹脂層部的周圍的至少一部分上配置有空間之圖案。In the
以圖6為例，對微細圖案進行更具體的說明。關於圖6所示之樹脂層22，在矩形的樹脂層部22a隔開空間22b而設置之、相鄰之樹脂層部22a之間存在空間22b，樹脂層部22a在周圍的至少一部分上存在空間22b。樹脂層22的空間22b的大小小於樹脂層部22a的大小。亦即，空間22b的面積小於樹脂層部22a。
又，樹脂層22的樹脂層部22a的大小小於上述圖3所示之樹脂層20的樹脂層部20a的大小，並且空間22b的大小亦小於空間20b的大小。
能夠藉由由樹脂層被覆之絕緣膜的區域Rs中之樹脂層部22a的大小和數量、空間22b的大小和數量來調整俯視下之樹脂層部22a的面積，藉此能夠調整被覆率γc。
微細圖案的樹脂層部22a的大小小且空間22b的大小亦小，因此使用噴墨法等直接製作樹脂層22之製作方法為較佳。藉由直接形成樹脂層22而不需要例如光微影法的曝光步驟等，能夠容易形成樹脂層。
樹脂層部22a並不限定於矩形，如上所述，可以為圓形。Taking FIG. 6 as an example, the fine pattern will be described in more detail. Regarding the
樹脂層部20a、22a及空間20b、22b的大小為20～200μm為較佳。若樹脂層部20a、22a及空間20b、22b的大小為20～200μm，則能夠效率良好地製作樹脂層部20a、22a及空間20b、22b。
再者，關於樹脂層部20a、22a及空間20b、22b的大小，若在俯視下為三角形及正方形等多邊形，則為外接圓的直徑，若在俯視下為圓形，則為直徑。The size of the
導體14的平均突出長度ha、hb小於樹脂層20的平均厚度hm為較佳。若導體14的突出部14a的平均突出長度ha及突出部14b的平均長度hb均小於樹脂層20的平均厚度hm，則突出部14a、14b均埋設於樹脂層20的樹脂層部20a中，導體14被樹脂層20保護。
樹脂層20的平均厚度hm為距絕緣膜12的表面12a的平均距離或距絕緣膜12的背面12b的平均距離。上述樹脂層20的平均厚度hm為如下值：將樹脂層沿結構體10的厚度方向Dt進行切割，使用場發射掃描式電子顯微鏡（FE-SEM）進行切割截面的截面觀察，在對應於樹脂層之10處測定距絕緣膜12的表面12a的距離而獲得之10個點的測定值的平均值。又，在對應於樹脂層之10處測定距絕緣膜12的背面12b的距離而獲得之10個點的測定值的平均值。
樹脂層的平均厚度為200～1000nm為較佳，更佳為400～600nm。若樹脂層的平均厚度為上述200～1000nm，則能夠充分發揮保護導體14的突出部之效果。The average protruding lengths ha and hb of the
又，在將由樹脂層20（參閱圖1）覆蓋之絕緣膜12（參閱圖1）的面積設為Sa、將沒有設置樹脂層20（參閱圖1）的絕緣膜12（參閱圖1）的面積設為Sb、將導體14的平均突出高度設為Hd（nm）、將樹脂層20的平均厚度設為hm（nm）時，滿足0.7≤（Sb×2/3×Hd）/（Sa×（hr-Hd））≤1.5為較佳。樹脂層部的總面積為由樹脂層覆蓋之絕緣膜的面積Sa，空間的總面積為沒有設置樹脂層的絕緣膜的面積Sb。
如上所述，若（Sb×2/3×Hd）/（Sa×（hr-Hd））在0.7～1.5的範圍內，則絕緣膜12的總面積的一半被樹脂層20覆蓋。樹脂層部20a（參閱圖1）在接合結構體10時以能夠抑制帶電並進一步減小接合時所需的力之狀態移動至樹脂層20沒有覆蓋的部分亦即空間20b（參閱圖1），從而絕緣膜12的表面12a（參閱圖1）、背面12b（參閱圖1）的整個區域被樹脂層20被覆。In addition, let the area of the insulating film 12 (see FIG. 1 ) covered by the resin layer 20 (see FIG. 1 ) be Sa, and let the area of the insulating film 12 (see FIG. 1 ) not provided with the resin layer 20 (see FIG. 1 ) be the area of the insulating film 12 (see FIG. 1 ) When Sb is used, the average protrusion height of the
Sb×2/3×Hd對應於在絕緣膜12上沒有設置樹脂層部的非被覆部的體積。又，Sb×2/3係基於合計在絕緣膜12的表面12a上形成之所有細孔13的面積而獲得之總面積相對於絕緣膜12的表面12a之比例約為66%者。
Sa×（hr-Hd）對應於在絕緣膜12上設置有樹脂層部之樹脂層部的體積。
由樹脂層20（參閱圖1）覆蓋之絕緣膜12（參閱圖1）的面積Sa為在俯視絕緣膜12時設置有樹脂層部20a（參閱圖1）之面積。
沒有設置樹脂層20（參閱圖1）的絕緣膜12（參閱圖1）的面積Sb為在俯視絕緣膜12時沒有設置樹脂層部20a（參閱圖1）的面積亦即空間20b（參閱圖1）的面積。
面積Sa及面積Sb均從絕緣膜12的表面12a側拍攝，在拍攝圖像中，藉由圖像解析來識別樹脂層部20a和空間20b。關於面積Sa及面積Sb，藉由分別求出所識別之樹脂層部20a和空間20b的面積而獲得。
導體14的平均突出高度Hd為上述平均突出長度ha或平均突出長度hb。
再者，0.7≤（Sb×2/3×Hd）/（Sa×（hr-Hd））≤1.5適用於絕緣膜的單側表面亦即適用於表面12a或背面12b的各表面為較佳。
又，上述（Sb×2/3×Hd）/（Sa×（hr-Hd））亦能夠使用上述被覆率γc如下表示。Sb×2/3×Hd corresponds to the volume of the non-coated portion where the resin layer portion is not provided on the insulating
[數式1]
又，設置於絕緣膜12的厚度方向Dt上之兩面上之樹脂層20可以分別以相同的圖案形成。亦即，在俯視下，設置於兩面上之樹脂層20可以為相同的圖案。若絕緣膜12的表面12a和背面12b中之樹脂層20的圖案相同，則在接合時，難以施加偏負載，因此為較佳。又，若絕緣膜12的表面12a和背面12b中之樹脂層20的圖案相同，則導體的至少一側端部沒有被被覆，因此容易充分釋放靜電，從而抑制帶電。
再者，設置於絕緣膜12的厚度方向Dt上之兩面上之樹脂層20的圖案相同是指樹脂層20的樹脂層部20a和空間20b的形狀及大小一致。
又，設置於絕緣膜12的厚度方向Dt上之兩面上之樹脂層20的圖案的配置位置相同為較佳。配置位置相同是指，俯視下之位置相同且在沒有絕緣膜12的狀態下絕緣膜12的表面12a的樹脂層20的圖案與絕緣膜12的背面12b的樹脂層20的圖案重疊。In addition, the resin layers 20 provided on both surfaces in the thickness direction Dt of the insulating
再者，關於結構體10的各部位的大小，除非另有說明，則為將結構體10沿厚度方向Dt進行切割，使用場發射掃描式電子顯微鏡（FE-SEM）進行切割截面的截面觀察，並測定10個點之對應於各尺寸之部位而獲得之平均值。In addition, regarding the size of each part of the
[結構體的製造方法的一例]
圖7～圖13係按步驟順序表示本發明的實施形態的結構體的製造方法的一例之示意性剖面圖。再者，在圖7～圖13中，對與圖1及圖2所示之結構相同的構成物標註相同符號，並省略其詳細說明。
在結構體的製造方法的一例中，在圖1所示之結構體10中，以絕緣膜12由鋁的陽極氧化膜構成者為例進行說明。為了形成鋁的陽極氧化膜，使用鋁基板。因此，在結構體的製造方法的一例中，首先，如圖7所示，準備鋁基板30。
鋁基板30依據最終獲得之結構體10（參閱圖1）的絕緣膜12的厚度、加工裝置等適當決定大小及厚度。鋁基板30例如為矩形板材。再者，並不限定於鋁基板，能夠使用能夠形成電絕緣的絕緣膜12之金屬基板。[An example of a method for manufacturing a structure]
7 to 13 are schematic cross-sectional views showing an example of a method for producing a structure according to an embodiment of the present invention in the order of steps. In addition, in FIGS. 7-13, the same code|symbol is attached|subjected to the structure which is the same as that shown in FIG. 1 and FIG. 2, and the detailed description is abbreviate|omitted.
As an example of a method for manufacturing a structure, in the
接著，對鋁基板30的單側的表面30a（參閱圖7）進行陽極氧化處理。藉此，鋁基板30的單側的表面30a（參閱圖7）被陽極氧化，從而如圖8所示形成具有沿鋁基板30的厚度方向Dt延伸之複數個細孔13之絕緣膜12亦即陽極氧化膜15。在各細孔13的底部存在阻層（barrier layer）31。將上述陽極氧化之步驟稱為陽極氧化處理步驟。
在具有複數個細孔13之絕緣膜12中，如上所述，在細孔13的底部分別存在阻層31，但是去除圖8所示之阻層31。藉此，獲得具有沒有阻層31的複數個細孔13之絕緣膜12（參閱圖9）。再者，將去除上述阻層31之步驟稱為阻層去除步驟。
在阻層去除步驟中，藉由使用包含氫過電壓（hydrogen overvoltage）高於鋁的金屬M1的離子之鹼水溶液，在去除絕緣膜12的阻層31的同時，在細孔13的底部32c（參閱圖9）的表面32d（參閱圖9）上形成由金屬（金屬M1）形成之金屬層35a（參閱圖9）。藉此，在細孔13中暴露之鋁基板30由金屬層35a被覆。藉此，在藉由電鍍向細孔13填充金屬時，容易進行電鍍，抑制金屬沒有充分填充到細孔中，抑制金屬向細孔的未填充等，從而抑制導體14的形成不良。
再者，包含上述金屬M1的離子之鹼水溶液還可以包含含鋁離子化合物（鋁酸鈉、氫氧化鋁、氧化鋁等）。含鋁離子化合物的含量換算成鋁離子的量為0.1～20g/L為較佳，0.3～12g/L為更佳，0.5～6g/L為進一步較佳。Next, anodizing treatment is performed on one
接著，從具有沿厚度方向Dt延伸之複數個細孔13之絕緣膜12的表面12a進行電鍍。此時，能夠使用金屬層35a作為電解電鍍的電極。在電鍍時使用金屬35b，以形成於細孔13的底部32c（參閱圖9）的表面32d（參閱圖9）上之金屬層35a為起點進行電鍍。藉此，如圖10所示，在絕緣膜12的細孔13的內部填充有構成導體14之金屬35b。藉由在細孔13的內部填充金屬35b而形成具有導電性之導體14。再者，稱為將金屬層35a和金屬35b一起填充之金屬35。
將在絕緣膜12的細孔13中填充金屬35b之步驟稱為金屬填充步驟。如上所述，導體14並不限定於由金屬構成，能夠使用導電性物質。在金屬填充步驟中，可以使用電解電鍍，對金屬填充步驟將在後面進行詳細說明。再者，絕緣膜12的表面12a相當於絕緣膜12的一側表面。
如圖11所示，在金屬填充步驟之後，將絕緣膜12的沒有設置鋁基板30的一側的表面12a沿厚度方向Dt去除一部分，以使在金屬填充步驟中所填充之金屬35比絕緣膜12的表面12a更突出。亦即，使導體14比絕緣膜12的表面12a更突出。藉此，可以獲得突出部14a。將使導體14比絕緣膜12的表面12a更突出之步驟稱為表面金屬突出步驟。
在表面金屬突出步驟之後，如圖12所示，去除鋁基板30。將去除鋁基板30之步驟稱為基板去除步驟。Next, electroplating is performed from the
接著，如圖13所示，在基板去除步驟之後，將絕緣膜12的設置有鋁基板30之一側的表面亦即背面12b沿厚度方向Dt去除一部分，以使在金屬填充步驟中所填充之金屬35亦即導體14比絕緣膜12的背面12b更突出。藉此，可以獲得突出部14b。
上述表面金屬突出步驟及背面金屬突出步驟可以為具有這兩個步驟之態樣，但是亦可以為具有表面金屬突出步驟及背面金屬突出步驟中的一個步驟之態樣。表面金屬突出步驟及背面金屬突出步驟對應於“突出步驟”，表面金屬突出步驟及背面金屬突出步驟均為突出步驟。
如圖13所示，導體14分別從絕緣膜12的表面12a及背面12b突出，並且具有突出部14a和突出部14b。
接著，在絕緣膜12的導體14突出之表面12a及背面12b上局部形成樹脂層20（參閱圖1）。藉此，能夠獲得圖1所示之結構體10。再者，作為樹脂層20，例如能夠設為上述圖3或圖4所示之圖案。對上述樹脂層20的形成步驟將在後面進行說明。
再者，在為使導體14不從絕緣膜12的背面12b突出的結構的情況下，將樹脂層20以圖12所示之狀態形成於絕緣膜12的表面12a上，從而獲得結構體10。Next, as shown in FIG. 13, after the step of removing the substrate, the surface of the insulating
在上述阻層去除步驟中，藉由使用包含氫過電壓高於鋁的金屬M1的離子之鹼水溶液來去除阻層，不僅去除阻層31，而且在細孔13的底部暴露之鋁基板30上形成比鋁更難產生氫氣的金屬M1的金屬層35a。其結果，金屬填充的面內均勻性變得良好。認為這是因為，抑制由電鍍液引起之氫氣的產生，從而容易進行藉由電解電鍍進行之金屬填充。
又，在阻層去除步驟中，設置保持步驟，該保持步驟以從小於陽極氧化處理步驟中之電壓的30%的範圍中選擇之電壓（保持電壓）的95%以上且105%以下的電壓保持合計5分鐘以上，並且發現藉由組合適用包含金屬M1的離子之鹼水溶液，大幅度改善電鍍處理時的金屬填充的均勻性。因此，具有保持步驟為較佳。
詳細的機制雖尚不明確，但是認為這是因為，在阻層去除步驟中，藉由使用包含金屬M1的離子之鹼水溶液而在阻層下方形成金屬M1的層，藉此能夠抑制鋁基板與陽極氧化膜的界面受到損傷，從而提高阻層的溶解的均勻性。In the above step of removing the resist layer, the resist layer is removed by using an alkaline aqueous solution containing ions of the metal M1 having a hydrogen overvoltage higher than that of aluminum, not only the resist
再者，在阻層去除步驟中，在細孔13的底部形成了由金屬（金屬M1）形成之金屬層35a，但是並不限定於此，僅去除阻層31而使鋁基板30在細孔13的底部暴露。在使鋁基板30暴露之狀態下，可以將鋁基板30用作電解電鍍的電極。Furthermore, in the step of removing the resist layer, the
〔陽極氧化膜〕
如上所述，從形成具有所期望的平均直徑之細孔且容易形成導體等理由考慮，陽極氧化膜例如可以使用鋁的陽極氧化膜。然而，並不限定於鋁的陽極氧化膜，能夠使用閥金屬的陽極氧化膜。因此，金屬基板可以使用閥金屬。
其中，作為閥金屬，具體而言，例如可以舉出上述鋁，除此以外，可以舉出鉭、鈮、鈦、鉿、鋯、鋅、鎢、鉍、銻等。在該等之中，從尺寸穩定性良好且比較廉價之觀點考慮，鋁的陽極氧化膜為較佳。因此，使用鋁基板來製造結構體為較佳。
陽極氧化膜的厚度與上述絕緣膜12的厚度ht相同。[anodized film]
As described above, for the anodic oxide film, for example, an anodic oxide film of aluminum can be used for the reasons of forming pores having a desired average diameter and facilitating the formation of conductors. However, it is not limited to an anodized film of aluminum, and an anodized film of valve metal can be used. Therefore, valve metal can be used as the metal substrate.
Among these, specific examples of the valve metal include the above-mentioned aluminum, and other examples thereof include tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, antimony, and the like. Among these, the anodic oxide film of aluminum is preferable from the viewpoint of good dimensional stability and relatively low cost. Therefore, it is preferable to use an aluminum substrate to manufacture the structure.
The thickness of the anodized film is the same as the thickness ht of the insulating
〔金屬基板〕 金屬基板為用於結構體的製造中者，並且為用於形成陽極氧化膜的基板。例如，如上所述，金屬基板可以使用能夠形成陽極氧化膜之金屬基板，並且能夠使用由上述閥金屬構成者。例如，如上所述，從容易形成陽極氧化膜作為陽極氧化膜等理由考慮，金屬基板可以使用鋁基板。[Metal substrate] The metal substrate is used in the manufacture of the structure, and is a substrate for forming an anodized film. For example, as described above, a metal substrate capable of forming an anodized film can be used, and a metal substrate made of the valve metal described above can be used. For example, as described above, an aluminum substrate can be used as the metal substrate from the viewpoint of easy formation of an anodized film as an anodized film.
〔鋁基板〕
用於形成絕緣膜12之鋁基板並無特別限定，作為其具體例，可以舉出純鋁板；以鋁為主成分且包含微量的雜元素之合金板；在低純度的鋁（例如再利用材料）上蒸鍍了高純度鋁之基板；藉由蒸鍍、濺射等方法在矽晶圓、石英、玻璃等的表面上被覆了高純度鋁之基板；將鋁層壓而獲得之樹脂基板；等。〔Aluminum plate〕
The aluminum substrate for forming the insulating
在鋁基板中，藉由陽極氧化處理而形成陽極氧化膜之單側的表面的鋁純度為99.5質量%以上為較佳，99.9質量%以上為更佳，99.99質量%以上為進一步較佳。若鋁純度在上述範圍內，則微孔排列的規則性變得充分。 關於鋁基板，只要能夠形成陽極氧化膜，則並無特別限定，例如可以使用JIS（Japanese Industrial Standards：日本工業標準）1050材。In the aluminum substrate, the aluminum purity of the surface on one side of the anodized film formed by the anodization treatment is preferably 99.5 mass % or more, more preferably 99.9 mass % or more, and even more preferably 99.99 mass % or more. When the aluminum purity is within the above range, the regularity of the micropore arrangement becomes sufficient. The aluminum substrate is not particularly limited as long as an anodic oxide film can be formed, and for example, JIS (Japanese Industrial Standards: Japanese Industrial Standards) 1050 material can be used.
對在鋁基板中進行陽極氧化處理之單側的表面預先實施熱處理、脫脂處理及鏡面精加工處理為較佳。 其中，關於熱處理、脫脂處理及鏡面精加工處理，能夠實施與日本特開2008-270158號公報的[0044]～[0054]段中所記載之各處理相同的處理。 陽極氧化處理之前的鏡面精加工處理例如為電解研磨，電解研磨例如可以使用含有磷酸之電解研磨液。It is preferable to preliminarily perform heat treatment, degreasing treatment, and mirror finishing treatment on the surface of one side of the anodized aluminum substrate. However, regarding the heat treatment, the degreasing treatment, and the mirror finishing treatment, the same treatments as those described in paragraphs [0044] to [0054] of JP-A No. 2008-270158 can be performed. The mirror surface finishing treatment before the anodizing treatment is, for example, electropolishing, and the electropolishing can use, for example, an electrolytic polishing liquid containing phosphoric acid.
〔陽極氧化處理步驟〕 陽極氧化處理能夠使用先前公知的方法，但是從提高微孔排列的規則性且擔保結構體的各向異性導電性之觀點考慮，使用自有序化法或恆壓處理為較佳。 其中，關於陽極氧化處理的自有序化法及恆壓處理，能夠實施與日本特開2008-270158號公報的[0056]～[0108]段及[圖3]中所記載之各處理相同的處理。[Anodizing step] The anodic oxidation treatment can be performed by a conventionally known method, but from the viewpoint of improving the regularity of the micropore arrangement and securing the anisotropic conductivity of the structure, it is preferable to use a self-ordering method or a constant pressure treatment. However, regarding the self-ordering method and constant voltage treatment of the anodizing treatment, the same processes as those described in paragraphs [0056] to [0108] and [ FIG. 3 ] of JP-A-2008-270158 can be performed. deal with.
〔保持步驟〕 結構體的製造方法可以具有保持步驟。保持步驟為如下步驟：在上述陽極氧化處理步驟之後，以從1V以上且小於上述陽極氧化處理步驟中之電壓的30%的範圍中選擇之保持電壓的95%以上且105%以下的電壓保持合計5分鐘以上之步驟。換言之，保持步驟為如下步驟：在上述陽極氧化處理步驟之後，以從1V以上且小於上述陽極氧化處理步驟中之電壓的30%的範圍中選擇之保持電壓的95%以上且105%以下的電壓實施合計5分鐘以上的電解處理之步驟。 其中，“陽極氧化處理中之電壓”為在鋁與對電極之間施加之電壓，例如若基於陽極氧化處理之電解時間為30分鐘，則是指保持在30分鐘之間之電壓的平均值。[holding steps] The manufacturing method of the structure may have a holding step. The holding step is a step of maintaining a total of 95% or more and 105% or less of the holding voltage selected from a range of 1 V or more and less than 30% of the voltage in the above-mentioned anodizing treatment step after the above-mentioned anodizing treatment step 5 minutes or more steps. In other words, the holding step is a step of, after the above-mentioned anodizing treatment step, at a voltage of 95% or more and 105% or less of the holding voltage selected from a range of 1 V or more and less than 30% of the voltage in the above-mentioned anodizing treatment step The step of carrying out the electrolytic treatment for a total of 5 minutes or more. The "voltage during anodization" is the voltage applied between the aluminum and the counter electrode. For example, if the electrolysis time based on anodization is 30 minutes, it refers to the average value of the voltages maintained for 30 minutes.
從相對於陽極氧化膜的側壁厚度亦即細孔的深度將阻層的厚度控制為適當的厚度之觀點考慮，保持步驟中之電壓為陽極氧化處理中之電壓的5%以上且25%以下為較佳，5%以上且20%以下為更佳。From the viewpoint of controlling the thickness of the resistive layer to an appropriate thickness with respect to the thickness of the sidewall of the anodized film, that is, the depth of the pores, the voltage in the holding step is 5% or more and 25% or less of the voltage in the anodizing treatment. Preferably, more than 5% and less than 20% are more preferable.
又，從更加提高面內均勻性之理由考慮，保持步驟中之保持時間的合計為5分鐘以上且20分鐘以下為較佳，5分鐘以上且15分鐘以下為更佳，5分鐘以上且10分鐘以下為進一步較佳。 又，保持步驟中之保持時間只要為合計5分鐘以上即可，但是連續5分鐘以上為較佳。In addition, from the viewpoint of further improving the in-plane uniformity, the total holding time in the holding step is preferably 5 minutes or more and 20 minutes or less, more preferably 5 minutes or more and 15 minutes or less, and 5 minutes or more and 10 minutes. The following are further preferred. In addition, the holding time in the holding step may be 5 minutes or more in total, but continuous 5 minutes or more is preferable.
進而，保持步驟中之電壓可以設定為從陽極氧化處理步驟中之電壓連續地或階段性地降低至保持步驟中之電壓，但是從進一步提高面內均勻性之理由考慮，在陽極氧化處理步驟結束之後的1秒以內設定為上述保持電壓的95%以上且105%以下的電壓為較佳。Furthermore, the voltage in the holding step can be set to decrease continuously or stepwise from the voltage in the anodizing treatment step to the voltage in the holding step, but in order to further improve the in-plane uniformity, the anodizing treatment step is terminated. It is preferable to set the voltage to 95% or more and 105% or less of the above-mentioned holding voltage within 1 second after that.
例如，藉由在上述陽極氧化處理步驟結束時降低電解電位，上述保持步驟亦能夠與上述陽極氧化處理步驟連續進行。 對於除了電解電位以外的條件，上述保持步驟能夠採用與上述先前公知的陽極氧化處理相同的電解液及處理條件。 尤其，在連續實施保持步驟和陽極氧化處理步驟之情況下，使用相同的電解液進行處理為較佳。For example, the above-mentioned holding step can also be performed continuously with the above-mentioned anodizing treatment step by lowering the electrolytic potential at the end of the above-mentioned anodizing treatment step. Regarding the conditions other than the electrolysis potential, the same electrolyte solution and treatment conditions as those of the previously known anodizing treatment described above can be used in the above-mentioned holding step. In particular, when the holding step and the anodizing treatment step are continuously performed, it is preferable to perform the treatment using the same electrolytic solution.
在具有複數個微孔之陽極氧化膜中，如上所述，在微孔的底部存在阻層（未圖示）。具有去除該阻層之阻層去除步驟。In an anodized film having a plurality of micropores, as described above, a barrier layer (not shown) is present at the bottom of the micropores. There is a resist layer removing step for removing the resist layer.
〔阻層去除步驟〕 阻層去除步驟例如為使用包含氫過電壓高於鋁的金屬M1的離子之鹼水溶液來去除陽極氧化膜的阻層之步驟。 藉由上述阻層去除步驟去除阻層，並且在微孔的底部形成由金屬M1形成之導電體層。 其中，氫過電壓是指產生氫時所需的電壓，例如鋁（Al）的氫過電壓為-1.66V（日本化學會誌，1982、（8），p1305-1313）。再者，將高於鋁的氫過電壓的金屬M1的例及其氫過電壓的值示於以下。 ＜金屬M1及氫（1N H2 SO4 ）過電壓＞ ・鉑（Pt）：0.00V ・金（Au）：0.02V ・銀（Ag）：0.08V ・鎳（Ni）：0.21V ・銅（Cu）：0.23V ・錫（Sn）：0.53V ・鋅（Zn）：0.70V[Removing Step of Resistant Layer] The step of removing the resistive layer is, for example, a step of removing the resistive layer of the anodic oxide film using an alkaline aqueous solution containing ions of metal M1 having a hydrogen overvoltage higher than that of aluminum. The resist layer is removed by the above step of removing the resist layer, and a conductor layer formed of metal M1 is formed at the bottom of the micro-hole. The hydrogen overvoltage refers to the voltage required to generate hydrogen. For example, the hydrogen overvoltage of aluminum (Al) is -1.66V (Journal of the Chemical Society of Japan, 1982, (8), p1305-1313). In addition, the example of the metal M1 which is higher than the hydrogen overvoltage of aluminum, and the value of the hydrogen overvoltage are shown below. <Overvoltage of metal M1 and hydrogen (1N H 2 SO 4 )> ・Platinum (Pt): 0.00V ・Gold (Au): 0.02V ・Silver (Ag): 0.08V ・Nickel (Ni): 0.21V ・Copper ( Cu): 0.23V ・Tin (Sn): 0.53V ・Zinc (Zn): 0.70V
細孔13亦能夠使微孔擴徑並去除阻層而形成。此時，可以使用擴孔（pore wide）處理進行微孔的擴徑。在藉由使陽極氧化膜浸漬於酸水溶液或鹼水溶液中以使陽極氧化膜溶解而擴大微孔的孔徑之處理的擴孔處理中，能夠使用硫酸、磷酸、硝酸、鹽酸等無機酸或該等的混合物的水溶液或氫氧化鈉、氫氧化鉀及氫氧化鋰等水溶液。
再者，在擴孔處理中，亦能夠去除微孔的底部的阻層，藉由在擴孔處理中使用氫氧化鈉水溶液，使微孔擴徑並去除阻層。The
〔金屬填充步驟〕
＜在金屬填充步驟中所使用之金屬＞
在金屬填充步驟中，為了形成導體而在上述細孔13的內部作為導電體填充之金屬及構成金屬層之金屬係電阻率為103
Ω・cm以下的材料為較佳。作為上述金屬的具體例，可以較佳地例示出金（Au）、銀（Ag）、銅（Cu）、鋁（Al）、鎂（Mg）、鎳（Ni）及鋅（Zn）。
再者，作為導電體，從導電性及基於電鍍法之形成的觀點考慮，銅（Cu）、金（Au）、鋁（Al）、鎳（Ni）為較佳，銅（Cu）、金（Au）為更佳，銅（Cu）為進一步較佳。[Metal Filling Step] <Metal Used in Metal Filling Step> In the metal filling step, in the metal filling step, the metal filled as a conductor inside the
＜電鍍法＞ 作為在細孔的內部填充金屬之電鍍法，例如能夠使用電解電鍍法或無電解電鍍法。 其中，在著色等中所使用之先前公知的電解電鍍法中，難以在孔中以高縱橫比選擇性地析出（生長）金屬。認為這是因為，析出金屬在孔內被消耗，即使進行一定時間以上的電解，電鍍亦不會生長。 因此，在藉由電解電鍍法填充金屬之情況下，在脈衝電解或恆電位電解時需要設置停止時間。停止時間需要為10秒以上，30～60秒為較佳。 又，為了促進電解液的攪拌，施加超音波亦較佳。＜Plating method＞ As a plating method for filling the inside of pores with metal, for example, an electrolytic plating method or an electroless plating method can be used. Among them, in the conventionally known electrolytic plating method used for coloring or the like, it is difficult to selectively deposit (grow) a metal in a hole with a high aspect ratio. This is considered to be because the precipitated metal is consumed in the hole, and the electroplating does not grow even if electrolysis is performed for a certain period of time or longer. Therefore, in the case of filling the metal by the electrolytic plating method, it is necessary to set a stop time at the time of pulse electrolysis or potentiostatic electrolysis. The stop time needs to be 10 seconds or more, preferably 30 to 60 seconds. In addition, in order to promote stirring of the electrolyte solution, it is also preferable to apply ultrasonic waves.
進而，電解電壓通常為20V以下，較佳為10V以下，但是預先測定所使用之電解液中之目標金屬的析出電位，在該電位+1V以內進行恆電位電解為較佳。再者，在進行恆電位電解時，能夠併用循環伏安法者為較佳，能夠使用Solartron公司、BAS Co.,Ltd.、HOKUTO DENKO CORPORATION、IVIUM公司等的恆電位裝置。Furthermore, the electrolysis voltage is usually 20 V or less, preferably 10 V or less, but the precipitation potential of the target metal in the electrolyte solution used is measured in advance, and potentiostatic electrolysis is preferably performed within this potential +1 V. In addition, when performing potentiostatic electrolysis, it is preferable that cyclic voltammetry can be used together, and potentiostatic apparatuses such as Solartron Corporation, BAS Co., Ltd., HOKUTO DENKO CORPORATION, and IVIUM Corporation can be used.
（電鍍液） 電鍍液能夠使用先前公知的電鍍液。 具體而言，在使銅析出之情況下，通常使用硫酸銅水溶液，但是硫酸銅的濃度為1～300g/L為較佳，100～200g/L為更佳。又，若在電解液中添加鹽酸，則能夠促進析出。此時，鹽酸濃度為10～20g/L為較佳。 又，在使金析出之情況下，使用四氯化金的硫酸溶液，藉由交流電解進行電鍍為較佳。(plating solution) As the plating solution, a conventionally known plating solution can be used. Specifically, in the case of precipitating copper, a copper sulfate aqueous solution is usually used, but the concentration of copper sulfate is preferably 1 to 300 g/L, and more preferably 100 to 200 g/L. In addition, if hydrochloric acid is added to the electrolytic solution, precipitation can be accelerated. In this case, the concentration of hydrochloric acid is preferably 10 to 20 g/L. In addition, in the case of depositing gold, it is preferable to perform electroplating by alternating current electrolysis using a sulfuric acid solution of gold tetrachloride.
電鍍液包含界面活性劑為較佳。 作為界面活性劑，能夠使用公知者。亦能夠直接使用先前作為添加到電鍍液中之界面活性劑已知之月桂基硫酸鈉。親水性部分能夠利用離子性（陽離子性/陰離子性/雙性）者、非離子性（非離子性）者中的任一種，但是在避免在電鍍對象物表面產生氣泡等觀點而言，陽離子線活性劑為較佳。電鍍液組成中之界面活性劑的濃度為1質量%以下為較佳。 再者，在無電解電鍍法中，在由縱橫比高的細孔形成之孔中完全填充金屬時需要長時間，因此使用電解電鍍法在細孔中填充金屬為較佳。Preferably, the electroplating solution contains a surfactant. As a surfactant, a well-known thing can be used. It is also possible to directly use sodium lauryl sulfate, previously known as a surfactant added to the electroplating bath. The hydrophilic part can utilize either ionic (cationic/anionic/ambivalent) or nonionic (nonionic), but from the viewpoint of avoiding generation of air bubbles on the surface of the plating object, the cationic line Active agents are preferred. The concentration of the surfactant in the composition of the plating solution is preferably 1 mass % or less. Furthermore, in the electroless plating method, it takes a long time to completely fill the pores formed by the pores with a high aspect ratio with metal, so it is preferable to use the electrolytic plating method to fill the pores with metal.
〔基板去除步驟〕 基板去除步驟為在金屬填充步驟之後去除上述鋁基板之步驟。去除鋁基板之方法並無特別限定，例如可以較佳地舉出藉由溶解去除之方法等。[Substrate removal step] The substrate removing step is a step of removing the above-mentioned aluminum substrate after the metal filling step. The method of removing an aluminum substrate is not specifically limited, For example, the method of removing by dissolution etc. can be mentioned preferably.
＜鋁基板的溶解＞ 上述鋁基板的溶解使用難以溶解陽極氧化膜且容易溶解鋁的處理液為較佳。 該種處理液對鋁之溶解速度為1μm/分鐘以上為較佳，3μm/分鐘以上為更佳，5μm/分鐘以上為進一步較佳。相同地，對陽極氧化膜之溶解速度成為0.1nm/分鐘以下為較佳，成為0.05nm/分鐘以下為更佳，成為0.01nm/分鐘以下為進一步較佳。 具體而言，包含至少1種離子化傾向低於鋁的金屬化合物且pH（氫離子指數）成為4以下或8以上之處理液為較佳，該pH為3以下或9以上為更佳，2以下或10以上為進一步較佳。<Dissolution of aluminum substrate> For the dissolution of the above-mentioned aluminum substrate, it is preferable to use a treatment liquid that is difficult to dissolve the anodic oxide film and that easily dissolves aluminum. Preferably, the dissolving rate of the treatment solution to aluminum is 1 μm/min or more, more preferably 3 μm/min or more, and even more preferably 5 μm/min or more. Similarly, the dissolution rate of the anodic oxide film is preferably 0.1 nm/min or less, more preferably 0.05 nm/min or less, and even more preferably 0.01 nm/min or less. Specifically, a treatment solution containing at least one metal compound having a lower ionization tendency than aluminum and having a pH (hydrogen ion index) of 4 or less or 8 or more is preferable, the pH is more preferably 3 or less or 9 or more, and 2 Less than or equal to 10 is more preferable.
作為溶解鋁之處理液，以酸水溶液或鹼水溶液為基質且例如調配錳、鋅、鉻、鐵、鎘、鈷、鎳、錫、鉛、銻、鉍、銅、汞、銀、鈀、鉑、金的化合物（例如，氯化鉑酸）、該等的氟化物、該等的氯化物等者為較佳。 其中，酸水溶液基質為較佳，並且摻混氯化物為較佳。 尤其，從處理寬容度的觀點考慮，在鹽酸水溶液中摻混有氯化汞之處理液（鹽酸/氯化汞）、在鹽酸水溶液中摻混有氯化銅之處理液（鹽酸/氯化銅）為較佳。 再者，溶解鋁之處理液的組成並無特別限定，例如能夠使用溴/甲醇混合物、溴/乙醇混合物及王水等。As a treatment solution for dissolving aluminum, an acid aqueous solution or an alkaline aqueous solution is used as a base and, for example, manganese, zinc, chromium, iron, cadmium, cobalt, nickel, tin, lead, antimony, bismuth, copper, mercury, silver, palladium, platinum, Compounds of gold (eg, chloroplatinic acid), these fluorides, these chlorides, and the like are preferred. Among them, the acid aqueous solution base is preferred, and the admixture of chloride is preferred. In particular, from the viewpoint of processing latitude, a treatment liquid (hydrochloric acid/mercuric chloride) mixed with a hydrochloric acid aqueous solution, a treatment liquid (hydrochloric acid/cupric chloride) mixed with a cupric chloride ) is better. In addition, the composition of the aluminum-dissolving treatment liquid is not particularly limited, and for example, a bromine/methanol mixture, a bromine/ethanol mixture, aqua regia, and the like can be used.
又，溶解鋁之處理液的酸或鹼濃度為0.01～10mol/L為較佳，0.05～5mol/L為更佳。 進而，使用了溶解鋁之處理液之處理溫度為-10℃～80℃為較佳，0℃～60℃為更佳。In addition, the acid or alkali concentration of the treatment solution for dissolving aluminum is preferably 0.01 to 10 mol/L, more preferably 0.05 to 5 mol/L. Furthermore, the treatment temperature using the treatment liquid for dissolving aluminum is preferably -10°C to 80°C, more preferably 0°C to 60°C.
又，關於上述鋁基板的溶解，藉由使上述電鍍步驟後的鋁基板與上述處理液接觸來進行。接觸方法並無特別限定，例如可以舉出浸漬法、噴塗法。其中，浸漬法為較佳。作為此時的接觸時間，10秒～5小時為較佳，1分鐘～3小時為更佳。Moreover, the dissolution of the said aluminum substrate is performed by making the aluminum substrate after the said electroplating process contact with the said processing liquid. The contact method is not particularly limited, and examples thereof include a dipping method and a spraying method. Among them, the dipping method is preferred. The contact time at this time is preferably 10 seconds to 5 hours, and more preferably 1 minute to 3 hours.
再者，在絕緣膜12上例如可以設置支撐體。支撐體為與絕緣膜12相同的外形為較佳。藉由安裝支撐體來提高處理性。In addition, a support body may be provided on the insulating
〔突出步驟〕
為了去除上述絕緣膜12的一部分，例如可以使用溶解絕緣膜12亦即氧化鋁（Al2
O3
）而不溶解構成導體14之金屬之酸水溶液或鹼水溶液。藉由使上述酸水溶液或鹼水溶液與具有填充有金屬之細孔13之絕緣膜12接觸，去除絕緣膜12的一部分。使上述酸水溶液或鹼水溶液與絕緣膜12接觸之方法並無特別限定，例如可以舉出浸漬法及噴塗法。其中，浸漬法為較佳。[Protrusion Step] To remove a part of the insulating
在使用酸水溶液之情況下，使用硫酸、磷酸、硝酸及鹽酸等無機酸或該等的混合物的水溶液為較佳。其中，在安全性優異之觀點而言，不含有鉻酸之水溶液為較佳。酸水溶液的濃度為1～10質量%為較佳。酸水溶液的溫度為25～60℃為較佳。 又，在使用鹼水溶液之情況下，使用選自包括氫氧化鈉、氫氧化鉀及氫氧化鋰之群組中的至少一個鹼的水溶液為較佳。鹼水溶液的濃度為0.1～5質量%為較佳。鹼水溶液的溫度為20～35℃為較佳。 具體而言，例如可以較佳地使用50g/L、40℃的磷酸水溶液、0.5g/L、30℃的氫氧化鈉水溶液或0.5g/L、30℃的氫氧化鉀水溶液。In the case of using an aqueous acid solution, it is preferable to use an aqueous solution of inorganic acids such as sulfuric acid, phosphoric acid, nitric acid, and hydrochloric acid, or a mixture thereof. Among them, an aqueous solution containing no chromic acid is preferable from the viewpoint of being excellent in safety. The concentration of the acid aqueous solution is preferably 1 to 10% by mass. The temperature of the acid aqueous solution is preferably 25 to 60°C. In addition, in the case of using an aqueous alkali solution, it is preferable to use an aqueous solution of at least one alkali selected from the group consisting of sodium hydroxide, potassium hydroxide, and lithium hydroxide. The concentration of the aqueous alkali solution is preferably 0.1 to 5% by mass. The temperature of the alkaline aqueous solution is preferably 20 to 35°C. Specifically, for example, a phosphoric acid aqueous solution of 50 g/L at 40°C, an aqueous sodium hydroxide solution of 0.5 g/L at 30°C, or an aqueous potassium hydroxide solution of 0.5 g/L at 30°C can be preferably used.
在酸水溶液或鹼水溶液中之浸漬時間為8～120分鐘為較佳，10～90分鐘為更佳，15～60分鐘為進一步較佳。在此，在反覆進行短時間的浸漬處理之情況下，浸漬時間是指各浸漬時間的合計。再者，在各浸漬處理之間可以實施清洗處理。The immersion time in the acid aqueous solution or the alkaline aqueous solution is preferably 8 to 120 minutes, more preferably 10 to 90 minutes, and even more preferably 15 to 60 minutes. Here, when the short-time immersion treatment is repeatedly performed, the immersion time refers to the total of each immersion time. In addition, a cleaning process may be performed between each dipping process.
又，為使金屬35亦即導體14比絕緣膜12的表面12a或背面12b更突出之程度，但是使導體14比絕緣膜12的表面12a或背面12b更突出10nm～1000nm為較佳，更突出50nm～500nm為更佳。亦即，從突出部14a的表面12a的突出量、從突出部14b的背面12b的導體14的突出量分別為10nm～1000nm為較佳，更佳為50nm～500nm。
導體14的突出部14a、14b的高度是指藉由場發射掃描式電子顯微鏡以2万倍的倍率觀察結構體10的截面，在10個點上測定導體的突出部的高度而獲得之平均值。In addition, in order to make the
在嚴格控制導體14的突出部的高度之情況下，在細孔13的內部填充金屬等導電性物質之後，將絕緣膜12與金屬等導電性物質的端部加工成同一平面狀之後，選擇性地去除陽極氧化膜為較佳。
又，在上述金屬的填充後或突出步驟之後，為了減少隨著金屬的填充而產生之導體14內的應變，能夠實施加熱處理。
從抑制金屬的氧化之觀點考慮，加熱處理在還元性環境中實施為較佳，具體而言，在氧濃度為20Pa以下的環境中進行為較佳，在真空下進行為更佳。其中，真空是指氣體密度及氣壓中的至少一個低於大氣的空間的狀態。
又，為了矯正，一邊對絕緣膜12施加應力一邊進行加熱處理為較佳。When the height of the protruding portion of the
〔樹脂層的形成步驟〕
在樹脂層20的形成步驟中，例如可以使用噴墨法、轉印法、噴塗法或網板印刷法等。噴墨法將樹脂層20直接形成於絕緣膜12上，因此能夠簡化樹脂層20的形成步驟，因此為較佳。
又，樹脂層的形成步驟可以在絕緣膜的導體突出之表面的整個表面上形成樹脂層之後，局部去除。此時，例如，在形成於整個表面上之樹脂層上以圖案狀形成抗蝕劑，並藉由濕蝕刻去除，從而以圖案狀形成樹脂層。
樹脂層的形成步驟可以在絕緣膜的導體突出之表面的整個表面上形成樹脂層之後，局部去除形成於絕緣膜的端部之樹脂層。此時，例如，在形成於整個表面上之樹脂層上以圖案狀形成抗蝕劑，並藉由濕蝕刻去除絕緣膜的端部，從而以圖案狀形成樹脂層。[Forming step of resin layer]
In the step of forming the
樹脂層亦能夠使用以下所示之組成。以下，對樹脂層的組成進行說明。例如，樹脂層含有高分子材料，亦可以包含抗氧化材料。The composition shown below can also be used for the resin layer. Hereinafter, the composition of the resin layer will be described. For example, the resin layer contains a polymer material, and may also contain an antioxidant material.
＜高分子材料＞ 作為樹脂層中所包含之高分子材料，並無特別限定，從能夠效率良好地填補半導體晶片或半導體晶圓等接合對象與結構體的間隙且更加提高結構體與半導體晶片或半導體晶圓的密接性之理由考慮，熱硬化性樹脂為較佳。 作為熱硬化性樹脂，具體而言，例如可以舉出環氧樹脂、酚樹脂、聚醯亞胺樹脂、聚酯樹脂、聚胺酯樹脂、雙順丁烯二醯亞胺樹脂、三聚氰胺樹脂、異氰酸酯系樹脂等。 其中，從更加提高絕緣可靠性且耐藥品性優異之理由考慮，使用聚醯亞胺樹脂和/或環氧樹脂為較佳。＜Polymer material＞ The polymer material contained in the resin layer is not particularly limited, but the gap between the bonding object such as a semiconductor wafer or semiconductor wafer and the structure can be efficiently filled, and the adhesion between the structure and the semiconductor chip or semiconductor wafer can be further improved. For reasons of properties, thermosetting resins are preferred. Specific examples of thermosetting resins include epoxy resins, phenol resins, polyimide resins, polyester resins, polyurethane resins, bismaleimide resins, melamine resins, and isocyanate-based resins. Wait. Among them, it is preferable to use a polyimide resin and/or an epoxy resin from the viewpoint of further improving the insulation reliability and being excellent in chemical resistance.
＜抗氧化材料＞ 作為樹脂層中所包含之抗氧化材料，具體而言，例如可以舉出1,2,3,4-四唑、5-胺基-1,2,3,4-四唑、5-甲基-1,2,3,4-四唑、1H-四唑-5-乙酸、1H-四唑-5-琥珀酸、1,2,3-***、4-胺基-1,2,3-***、4,5-二胺基-1,2,3-***、4-羧基-1H-1,2,3-***、4,5-二羧基-1H-1,2,3-***、1H-1,2,3-***-4-乙酸、4-羧基-5-羧基甲基-1H-1,2,3-***、1,2,4-***、3-胺基-1,2,4-***、3,5-二胺基-1,2,4-***、3-羧基-1,2,4-***、3,5-二羧基-1,2,4-***、1,2,4-***-3-乙酸、1H-苯并***、1H-苯并***-5-羧酸、苯并呋呫、2,1,3-苯并噻唑、鄰苯二胺、間苯二胺、兒茶酚、鄰胺基苯酚、2-巰基苯并噻唑、2-巰基苯并咪唑、2-巰基苯并㗁唑、三聚氰胺及該等的衍生物。 在該等之中，苯并***及其衍生物為較佳。 作為苯并***衍生物，可以舉出在苯并***的苯環上具有羥基、烷氧基（例如，甲氧基、乙氧基等）、胺基、硝基、烷基（例如,甲基、乙基、丁基等）、鹵素原子（例如，氟、氯、溴、碘等）等之取代苯并***。又，亦可以舉出與萘***、萘雙***相同地經取代之取代萘***、取代萘雙***等。＜Antioxidant material＞ Specific examples of the antioxidant material contained in the resin layer include 1,2,3,4-tetrazole, 5-amino-1,2,3,4-tetrazole, and 5-methyl tetrazole. -1,2,3,4-tetrazole, 1H-tetrazole-5-acetic acid, 1H-tetrazole-5-succinic acid, 1,2,3-triazole, 4-amino-1,2,3 -triazole, 4,5-diamino-1,2,3-triazole, 4-carboxy-1H-1,2,3-triazole, 4,5-dicarboxy-1H-1,2,3 - Triazole, 1H-1,2,3-triazole-4-acetic acid, 4-carboxy-5-carboxymethyl-1H-1,2,3-triazole, 1,2,4-triazole, 3 -Amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 3-carboxy-1,2,4-triazole, 3,5-dicarboxy- 1,2,4-triazole, 1,2,4-triazole-3-acetic acid, 1H-benzotriazole, 1H-benzotriazole-5-carboxylic acid, benzofuran, 2,1, 3-benzothiazole, o-phenylenediamine, m-phenylenediamine, catechol, o-aminophenol, 2-mercaptobenzothiazole, 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, melamine and the etc. derivatives. Among these, benzotriazole and its derivatives are preferred. Examples of the benzotriazole derivatives include those having a hydroxyl group, an alkoxy group (for example, a methoxy group, an ethoxy group, etc.), an amino group, a nitro group, an alkyl group (for example, substituted benzotriazoles such as methyl, ethyl, butyl, etc.), halogen atoms (eg, fluorine, chlorine, bromine, iodine, etc.). Moreover, similarly to naphthalene triazole and naphthalene bistriazole, the substituted naphthalene triazole, substituted naphthalene bistriazole, etc. are mentioned.
又，作為樹脂層中所包含之抗氧化材料的另一例，可以舉出作為通常的抗氧化劑之高級脂肪酸、高級脂肪酸銅、酚化合物、烷醇胺、對苯二酚類、銅螯合劑、有機胺、有機銨鹽等。Further, as another example of the antioxidant material contained in the resin layer, higher fatty acids, copper higher fatty acids, phenolic compounds, alkanolamines, hydroquinones, copper chelating agents, organic Amines, organic ammonium salts, etc.
樹脂層中所包含之抗氧化材料的含量並無特別限定，但是從防蝕效果的觀點考慮，相對於樹脂層的總質量為0.0001質量%以上為較佳，0.001質量%以上為更佳。又，從在正式接合製程中獲得適當的電阻之理由考慮，5.0質量%以下為較佳，2.5質量%以下為更佳。The content of the antioxidant material contained in the resin layer is not particularly limited, but is preferably 0.0001 mass % or more, more preferably 0.001 mass % or more, relative to the total mass of the resin layer, from the viewpoint of the anti-corrosion effect. In addition, from the viewpoint of obtaining an appropriate resistance in the main bonding process, 5.0 mass % or less is preferable, and 2.5 mass % or less is more preferable.
＜防遷移材料＞ 從藉由捕捉樹脂層中能夠含有之金屬離子、鹵素離子及來自於半導體晶片及半導體晶圓之金屬離子來更加提高絕緣可靠性之理由考慮，樹脂層含有防遷移材料為較佳。<Anti-migration material> The resin layer preferably contains an anti-migration material for the reason of further improving insulation reliability by capturing metal ions, halogen ions, and metal ions from semiconductor chips and semiconductor wafers that can be contained in the resin layer.
作為防遷移材料，例如能夠使用離子交換體，具體而言，能夠使用陽離子交換體與陰離子交換體的混合物或者僅使用陽離子交換體。 其中，陽離子交換體及陰離子交換體例如能夠分別從後述無機離子交換體及有機離子交換體中適當選擇。As the migration preventing material, for example, an ion exchanger can be used, and specifically, a mixture of a cation exchanger and an anion exchanger or only a cation exchanger can be used. Among them, the cation exchanger and the anion exchanger can be appropriately selected, for example, from inorganic ion exchangers and organic ion exchangers described later, respectively.
（無機離子交換體） 作為無機離子交換體，例如可以舉出以含水氧化鋯為代表之金屬的含水氧化物。 作為金屬的種類，例如除了鋯以外，已知有鐵、鋁、錫、鈦、銻、鎂、鈹、銦、鉻、鉍等。 在該等之中，鋯系者對陽離子的Cu2+ 、Al3+ 具有交換能力。又，關於鐵系者，亦對Ag+ 、Cu2+ 具有交換能力。相同地，錫系、鈦系、銻系者為陽離子交換體。 另一方面，鉍系者對陰離子的Cl- 具有交換能力。 又，鋯系者依據製造條件顯示出陰離子的交換能力。關於鋁系、錫系者亦相同。 作為除了該等以外的無機離子交換體，已知有以磷酸鋯為代表之多價金屬的酸性鹽、以磷鉬酸銨為代表之異種多重酸鹽、不溶性亞鐵氰化物等合成物。 該等的無機離子交換體的一部分已有市售，例如已知有TOAGOSEI CO.,LTD.的商品名稱“IXE”中之各種等級。 再者，除了合成品以外，亦能夠使用如天然物的沸石或蒙脫石的無機離子交換體的粉末。(Inorganic ion exchanger) As an inorganic ion exchanger, the hydrous oxide of a metal represented by hydrous zirconia is mentioned, for example. As the kind of metal, iron, aluminum, tin, titanium, antimony, magnesium, beryllium, indium, chromium, bismuth, etc. are known, for example, in addition to zirconium. Among these, zirconium-based ones have exchange ability for Cu 2+ and Al 3+ of cations. In addition, iron-based ones also have exchange ability for Ag + and Cu 2+ . Similarly, tin-based, titanium-based, and antimony-based ones are cation exchangers. On the other hand, bismuth-based ones have the ability to exchange Cl- for anions. In addition, zirconium-based ones exhibit anion exchange ability depending on the production conditions. The same applies to aluminum-based and tin-based ones. As inorganic ion exchangers other than these, compounds such as acid salts of polyvalent metals represented by zirconium phosphate, heterogeneous polyacid salts represented by ammonium phosphomolybdate, and insoluble ferrocyanide are known. Some of these inorganic ion exchangers are commercially available, for example, various grades under the trade name "IXE" of TOAGOSEI CO., LTD. are known. In addition to synthetic products, powders of inorganic ion exchangers such as natural zeolite or montmorillonite can also be used.
（有機離子交換體） 在有機離子交換體中，作為陽離子交換體，可以舉出具有磺酸基之交聯聚苯乙烯，除此以外，亦可以舉出具有羧酸基、膦酸基或次膦酸基者。 又，作為陰離子交換體，可以舉出具有四級銨基、四級鏻基或三級鋶基之交聯聚苯乙烯。(Organic ion exchanger) Among the organic ion exchangers, examples of the cation exchangers include cross-linked polystyrene having a sulfonic acid group, and, in addition to these, those having a carboxylic acid group, a phosphonic acid group, or a phosphinic acid group. Moreover, as an anion exchanger, the crosslinked polystyrene which has a quaternary ammonium group, a quaternary phosphonium group, or a tertiary perylene group is mentioned.
該等的無機離子交換體及有機離子交換體只要考慮欲捕捉之陽離子、陰離子的種類、對該離子之交換容量而適當選擇即可。當然，亦能夠混合使用無機離子交換體和有機離子交換體，這是毋庸置疑的。 在電子元件的製造步驟中包括加熱製程，因此無機離子交換體為較佳。These inorganic ion exchangers and organic ion exchangers may be appropriately selected in consideration of the types of cations and anions to be captured, and the exchange capacity of the ions. Of course, inorganic ion exchangers and organic ion exchangers can also be used in combination, of course. In the manufacturing steps of electronic components, a heating process is included, so inorganic ion exchangers are preferred.
又，關於離子交換體與上述高分子材料的混合比，例如，從機械強度的觀點考慮，將離子交換體設為10質量%以下為較佳，將離子交換體設為5質量%以下為更佳，將離子交換體設為2.5質量%以下為進一步較佳。又，從抑制將半導體晶片或半導體晶圓與結構體進行接合時的遷移之觀點考慮，將離子交換體設為0.01質量%以上為較佳。In addition, regarding the mixing ratio of the ion exchanger and the above-mentioned polymer material, for example, from the viewpoint of mechanical strength, the ion exchanger is preferably 10 mass % or less, and the ion exchanger is preferably 5 mass % or less. Preferably, the ion exchanger is more preferably 2.5 mass % or less. Moreover, from the viewpoint of suppressing migration when the semiconductor wafer or the semiconductor wafer and the structure are joined, the ion exchanger is preferably 0.01 mass % or more.
＜無機填充劑＞ 樹脂層含有無機填充劑為較佳。 作為無機填充劑，並無特別限制，能夠從公知者中適當選擇，例如可以舉出高嶺土、硫酸鋇、鈦酸鋇、氧化矽粉、微粉狀氧化矽、氣相法二氧化矽、非晶二氧化矽、結晶二氧化矽、熔融二氧化矽、球狀二氧化矽、滑石、黏土、碳酸鎂、碳酸鈣、氧化鋁、氫氧化鋁、雲母、氮化鋁、氧化鋯、氧化釔、碳化矽、氮化矽等。＜Inorganic fillers＞ It is preferable that the resin layer contains an inorganic filler. The inorganic filler is not particularly limited, and can be appropriately selected from known ones, for example, kaolin, barium sulfate, barium titanate, silicon oxide powder, fine powdered silicon oxide, fumed silicon dioxide, amorphous Silica, crystalline silica, fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, alumina, aluminum hydroxide, mica, aluminum nitride, zirconia, yttria, carbide Silicon, Silicon Nitride, etc.
從能夠防止無機填充劑進入導通路之間而更加提高導通可靠性之理由考慮，無機填充劑的平均粒徑大於各導通路的間隔為較佳。 無機填充劑的平均粒徑為30nm～10μm為較佳，80nm～1μm為更佳。 其中，關於平均粒徑，將藉由雷射衍射散射式粒徑測定裝置（Nikkiso Co.,Ltd.製造之Microtrac MT3300）進行測定之一次粒徑設為平均粒徑。It is preferable that the average particle diameter of the inorganic filler is larger than the interval between the conductive paths because the inorganic filler can be prevented from entering between the conductive paths and the reliability of the conductive paths can be further improved. The average particle diameter of the inorganic filler is preferably 30 nm to 10 μm, and more preferably 80 nm to 1 μm. Here, about the average particle size, the primary particle size measured by a laser diffraction scattering particle size measuring apparatus (Microtrac MT3300 manufactured by Nikkiso Co., Ltd.) was referred to as an average particle size.
＜硬化劑＞ 樹脂層可以含有硬化劑。 在含有硬化劑之情況下，從抑制與連接對象的半導體晶片或半導體晶圓的表面形狀的接合不良之觀點考慮，不使用在常溫下為固體的硬化劑而含有在常溫下為液體的硬化劑為更佳。 其中，“在常溫下為固體”是指在25℃下為固體，例如是指融點為高於25℃的溫度之物質。＜Hardener＞ The resin layer may contain a hardener. When a curing agent is contained, from the viewpoint of suppressing poor bonding with the semiconductor wafer to be connected or the surface shape of the semiconductor wafer, a curing agent that is liquid at room temperature is not used that is solid at room temperature for better. Here, "solid at normal temperature" means a solid at 25°C, for example, a substance whose melting point is higher than 25°C.
作為硬化劑，具體而言，例如可以舉出二胺基二苯基甲烷、二胺基二苯基碸那樣的芳香族胺、脂肪族胺、4-甲基咪唑等咪唑衍生物、雙氰胺、四甲基胍、硫脲加成胺、甲基六氫鄰苯二甲酸酐等羧酸酐、羧酸醯肼、羧酸醯胺、多酚化合物、酚醛清漆樹脂、多硫醇等，能夠從該等的硬化劑中適當選擇使用在25℃下為液體者。再者，硬化劑可以單獨使用1種，亦可以併用2種以上。Specific examples of the curing agent include aromatic amines such as diaminodiphenylmethane and diaminodiphenyl amine, aliphatic amines, imidazole derivatives such as 4-methylimidazole, and dicyandiamide. , tetramethylguanidine, thiourea addition amine, methylhexahydrophthalic anhydride and other carboxylic anhydrides, carboxylic acid hydrazides, carboxylic acid amides, polyphenol compounds, novolak resins, polythiols, etc., can be obtained from Among these hardeners, those that are liquid at 25°C are appropriately selected and used. In addition, a hardening agent may be used individually by 1 type, and may use 2 or more types together.
在樹脂層中，可以在不損害其特性之範圍內含有廣泛地通常添加到半導體封裝體的樹脂絕緣膜中之分散劑、緩衝劑、黏度調整劑等各種添加劑。In the resin layer, various additives such as dispersing agents, buffering agents, and viscosity modifiers, which are generally added to the resin insulating film of the semiconductor package, can be contained widely within the range that does not impair the properties thereof.
作為樹脂層，除了上述者以外，例如還能夠使用含有主要組成物者，該主要組成物包含以下所示之丙烯酸聚合物、丙烯酸單體及順丁烯二醯亞胺化合物。As the resin layer, in addition to the above, for example, one containing a main composition including an acrylic polymer, an acrylic monomer, and a maleimide compound shown below can be used.
＜丙烯酸聚合物＞ 丙烯酸聚合物為包含來自於（甲基）丙烯酸酯成分之構成單元之聚合物，樹脂層的黏性不會過強且在半導體的安裝步驟中損害作業性之憂慮少者為較佳。作為（甲基）丙烯酸酯成分，例如能夠使用（甲基）丙烯酸甲酯、（甲基）丙烯酸乙酯、（甲基）丙烯酸丁酯、（甲基）丙烯酸異丁酯、（甲基）丙烯酸第三丁酯、丁氧基乙基（甲基）丙烯酸酯、（甲基）丙烯酸異戊酯、（甲基）丙烯酸己酯、（甲基）丙烯酸2-乙基己酯、（甲基）丙烯酸庚酯、（甲基）丙烯酸辛基庚酯、（甲基）丙烯酸壬酯、（甲基）丙烯酸癸酯、（甲基）丙烯酸十一酯、（甲基）丙烯酸月桂酯等。＜Acrylic polymer＞ The acrylic polymer is a polymer containing a structural unit derived from a (meth)acrylate component, the resin layer is not too sticky, and there is less concern about impairing workability in the semiconductor mounting step. As the (meth)acrylate component, for example, methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, and (meth)acrylic acid can be used. Tert-butyl, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth)acrylate Heptyl acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, lauryl (meth)acrylate, etc.
丙烯酸聚合物除了上述（甲基）丙烯酸酯成分以外，還可以包含對應於能夠與上述（甲基）丙烯酸酯成分共聚的其他單體成分之構成單元。作為其他單體成分，例如能夠使用含羧基單體（例如，（甲基）丙烯酸）、含環氧基單體（例如，（甲基）丙烯酸縮水甘油酯）、含腈基單體（例如，丙烯腈等）。The acrylic polymer may contain, in addition to the above-mentioned (meth)acrylate component, a structural unit corresponding to other monomer components that can be copolymerized with the above-mentioned (meth)acrylate component. As other monomer components, for example, carboxyl group-containing monomers (for example, (meth)acrylic acid), epoxy group-containing monomers (for example, glycidyl (meth)acrylate), nitrile group-containing monomers (for example, acrylonitrile, etc.).
例如，作為丙烯酸聚合物，能夠使用包含對應於丙烯酸丁酯、丙烯酸甲酯、丙烯酸、甲基丙烯酸縮水甘油酯及丙烯腈之構成單元者。For example, as an acrylic polymer, what contains the structural unit corresponding to butyl acrylate, methyl acrylate, acrylic acid, glycidyl methacrylate, and acrylonitrile can be used.
關於丙烯酸聚合物，能夠藉由將上述（甲基）丙烯酸酯成分或其他單體成分進行聚合而獲得。關於聚合方法，可以舉出溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等。作為丙烯酸聚合物的聚合反應的種類，例如可以舉出自由基聚合、陽離子聚合、陰離子聚合、活性自由基聚合、活性陽離子聚合、活性陰離子聚合、配位聚合等。The acrylic polymer can be obtained by polymerizing the above-mentioned (meth)acrylate component or other monomer components. As a polymerization method, solution polymerization, emulsion polymerization, block polymerization, suspension polymerization, etc. are mentioned. Examples of the type of polymerization reaction of the acrylic polymer include radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, and coordination polymerization.
丙烯酸聚合物的重量平均分子量（Mw）並無特別限制，但是例如能夠設成包含在100000以上且1200000以下的範圍內，亦能夠設成包含在500000以上且1000000以下的範圍內。Although the weight average molecular weight (Mw) of an acrylic polymer is not specifically limited, For example, it can be contained in the range of 100,000 or more and 1,200,000 or less, and can also be contained in the range of 500,000 or more and 1,000,000 or less.
若將樹脂層中的丙烯酸聚合物、丙烯酸單體及順丁烯二醯亞胺化合物稱為主要組成物，則丙烯酸聚合物在100質量份的主要組成物中包含在10質量份以上且60質量份以下的範圍內，較佳為包含在10質量份以上且45質量份以下的範圍內，進一步較佳為包含在15質量份以上且40質量份以下的範圍內。若丙烯酸聚合物的含量小於10質量份，則存在難以排除空隙之傾向。又，若丙烯酸聚合物的含量超過60質量份，則存在難以實現低壓安裝之傾向，從而存在連接性亦變差之傾向。When the acrylic polymer, the acrylic monomer, and the maleimide compound in the resin layer are referred to as the main constituents, the acrylic polymer is contained in 10 parts by mass or more and 60 parts by mass in 100 parts by mass of the main constituent It is preferable to be contained in the range of 10 mass parts or more and 45 mass parts or less, and it is more preferable to contain in the range of 15 mass parts or more and 40 mass parts or less in the range of 1 part or less by mass. When the content of the acrylic polymer is less than 10 parts by mass, it tends to be difficult to remove voids. Moreover, when content of an acrylic polymer exceeds 60 mass parts, there exists a tendency for low-pressure mounting to become difficult, and there exists a tendency for connectivity to deteriorate.
關於丙烯酸聚合物，可以在主要組成物中單獨含有1種類的丙烯酸聚合物，亦可以同時含有2種類以上的丙烯酸聚合物。在併用2種類以上的丙烯酸聚合物之情況下，樹脂層中的丙烯酸聚合物的含量的合計在上述範圍內為較佳。Regarding the acrylic polymer, one type of acrylic polymer may be contained alone in the main composition, or two or more types of acrylic polymers may be contained simultaneously. When two or more types of acrylic polymers are used in combination, the total content of the acrylic polymers in the resin layer is preferably within the above range.
＜丙烯酸單體＞ 作為丙烯酸單體，能夠使用單官能的（甲基）丙烯酸酯、2官能以上的（甲基）丙烯酸酯。作為丙烯酸單體，例如可以舉出異三聚氰酸EO改質二丙烯酸酯（TOAGOSEI CO.,LTD.製）、異三聚氰酸EO改質三丙烯酸酯（TOAGOSEI CO.,LTD.製）、二新戊四醇及四丙烯酸酯（TOAGOSEI CO.,LTD.製）、丙烯酸2-羥基-3-苯氧基丙酯（TOAGOSEI CO.,LTD.製）、9,9-雙[4-（2-丙烯醯氧基乙氧基）苯基]茀（SHIN-NAKAMURA CHEMICAL CO, LTD.製）、三環癸烷二甲醇二丙烯酸酯（SHIN-NAKAMURA CHEMICAL CO, LTD.製）、乙氧化雙酚A二丙烯酸酯（SHIN-NAKAMURA CHEMICAL CO, LTD.製）、茀系丙烯酸酯（例如，產品名稱：Ogsol EA0200、EA0300、Osaka Gas Chemicals Co., Ltd.製）等。在該等的丙烯酸單體中，若考慮耐熱性等，則高耐熱性之茀系丙烯酸酯亦較佳。<Acrylic monomer> As the acrylic monomer, a monofunctional (meth)acrylate and a bifunctional or more (meth)acrylate can be used. Examples of the acrylic monomer include isocyanuric acid EO-modified diacrylate (manufactured by TOAGOSEI CO., LTD.) and isocyanuric acid EO-modified triacrylate (manufactured by TOAGOSEI CO., LTD.) , Dipionaerythritol and tetraacrylate (manufactured by TOAGOSEI CO., LTD.), 2-hydroxy-3-phenoxypropyl acrylate (manufactured by TOAGOSEI CO., LTD.), 9,9-bis[4- (2-Propenyloxyethoxy)phenyl]Fine (manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.), tricyclodecane dimethanol diacrylate (manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.), ethoxylated Bisphenol A diacrylate (manufactured by SHIN-NAKAMURA CHEMICAL CO, LTD.), perylene acrylate (eg, product name: Ogsol EA0200, EA0300, manufactured by Osaka Gas Chemicals Co., Ltd.), and the like. Among these acrylic monomers, in consideration of heat resistance, etc., a perylene acrylate with high heat resistance is also preferable.
樹脂層中的丙烯酸單體能夠設成如下：在100質量份的主要組成物中包含在10質量份以上且60質量份以下的範圍內，較佳為包含在10質量份以上且55質量份以下的範圍內，更佳為包含在10質量份以上且50質量份以下的範圍內。若丙烯酸單體的含量小於10質量份，則存在連接性變差之傾向。又，若丙烯酸單體的含量超過60質量份，則存在難以排除空隙之傾向。The acrylic monomer in the resin layer can be contained in the range of 10 parts by mass or more and 60 parts by mass or less, preferably 10 parts by mass or more and 55 parts by mass or less, in 100 parts by mass of the main component. within the range of , more preferably within the range of 10 parts by mass or more and 50 parts by mass or less. When content of an acrylic monomer is less than 10 mass parts, there exists a tendency for connectivity to deteriorate. Moreover, when content of an acrylic monomer exceeds 60 mass parts, there exists a tendency for it to become difficult to remove a void.
關於丙烯酸單體，可以單獨含有1種類的丙烯酸單體，亦可以同時含有2種類以上的丙烯酸單體。在併用2種類以上的丙烯酸單體之情況下，樹脂層中的丙烯酸單體的含量的合計在上述範圍內為較佳。As for the acrylic monomer, one type of acrylic monomer may be contained alone, or two or more types of acrylic monomers may be contained simultaneously. When two or more types of acrylic monomers are used in combination, the total content of the acrylic monomers in the resin layer is preferably within the above range.
＜順丁烯二醯亞胺化合物＞ 作為順丁烯二醯亞胺化合物，例如能夠使用在1分子中具有2個以上的順丁烯二醯亞胺基之化合物，雙順丁烯二醯亞胺為較佳。作為順丁烯二醯亞胺化合物，例如可以舉出4-甲基-1,3-伸苯基雙順丁烯二醯亞胺、4,4-雙順丁烯二醯亞胺二苯基甲烷、間-伸苯基雙順丁烯二醯亞胺、雙酚A二苯基醚雙順丁烯二醯亞胺、3,3’-二甲基-5,5’-二乙基-4,4’-二苯基甲烷雙順丁烯二醯亞胺等。在該等之中，芳香族雙順丁烯二醯亞胺亦較佳，尤其，若考慮樹脂層的製造步驟中之作業性，則溶劑溶解性或流動性良好的3,3’-二甲基-5,5’-二乙基-4,4’-二苯基甲烷雙順丁烯二醯亞胺為較佳。<Maleimide compound> As the maleimide compound, for example, a compound having two or more maleimide groups in one molecule can be used, and bismaleimide is preferable. Examples of the maleimide compound include 4-methyl-1,3-phenylene bismaleimide and 4,4-bismaleimidediphenyl Methane, m-phenylene bismaleimide, bisphenol A diphenyl ether bismaleimide, 3,3'-dimethyl-5,5'-diethyl- 4,4'-diphenylmethane bismaleimide, etc. Among these, aromatic bismaleimide is also preferable, and especially, considering the workability in the production step of the resin layer, 3,3'-dimethyl methacrylate having good solvent solubility and fluidity Base-5,5'-diethyl-4,4'-diphenylmethanebismaleimide is preferred.
樹脂層中的順丁烯二醯亞胺化合物在100質量份的主要組成物中包含在20質量份以上且70質量份以下的範圍內，較佳為包含在20質量份以上且60質量份以下的範圍內，更佳為包含在20質量份以上且55質量份以下的範圍內。若順丁烯二醯亞胺化合物的含量小於20質量份，則存在難以實現低壓安裝之傾向，從而存在連接性亦變差之傾向。又，若順丁烯二醯亞胺化合物的含量超過70質量份，則存在難以低壓安裝及無空隙安裝之傾向。The maleimide compound in the resin layer is contained in a range of 20 parts by mass or more and 70 parts by mass or less, preferably 20 parts by mass or more and 60 parts by mass or less, based on 100 parts by mass of the main component. In the range of , it is more preferable to be included in the range of 20 mass parts or more and 55 mass parts or less. When the content of the maleimide compound is less than 20 parts by mass, there is a tendency that low-pressure mounting is difficult to achieve, and the connectivity also tends to be poor. Moreover, when content of a maleimide compound exceeds 70 mass parts, there exists a tendency for a low-pressure installation and a void-free installation to become difficult.
樹脂層中所使用之組成物依據目的還可以含有除了構成上述主要組成物之成分以外的其他成分。作為其他成分，例如可以舉出酚化合物、填料等。The composition used for the resin layer may contain other components other than the components constituting the above-mentioned main composition depending on the purpose. As other components, a phenol compound, a filler, etc. are mentioned, for example.
＜酚化合物＞ 酚化合物能夠用作上述順丁烯二醯亞胺化合物用的硬化劑，但是即使不含有酚，亦能夠開始熱硬化反應。作為酚化合物，例如能夠使用烯丙基化雙酚，具體而言，能夠使用2,2’-二烯丙基雙酚A（產品名稱：DABPA）、4,4’-（二甲基亞甲基）雙[2-（2-丙烯基）酚]、4,4’-亞甲基雙[2-（2-丙烯基）酚]、4,4’-（二甲基亞甲基）雙[2-（2-丙烯基）-6-甲基酚]等。在該等之中，2,2’-二烯丙基雙酚A亦較佳。＜Phenolic compound＞ A phenolic compound can be used as a hardening agent for the above-mentioned maleimide compound, but even if phenol is not contained, a thermosetting reaction can be started. As the phenol compound, for example, allylated bisphenol can be used, and specifically, 2,2'-diallylbisphenol A (product name: DABPA), 4,4'-(dimethylmethylene) can be used. base) bis[2-(2-propenyl)phenol], 4,4'-methylenebis[2-(2-propenyl)phenol], 4,4'-(dimethylmethylene)bis [2-(2-propenyl)-6-methylphenol] and the like. Among these, 2,2'-diallylbisphenol A is also preferred.
含有酚化合物時的酚化合物的含量例如相對於丙烯酸聚合物、丙烯酸單體、順丁烯二醯亞胺化合物及酚化合物的合計100質量份能夠設為15質量份以下。關於酚化合物，可以單獨含有1種類的酚化合物，亦可以同時含有2種類以上的酚化合物。在併用2種類以上的酚化合物之情況下，樹脂層中的酚化合物的含量的合計在上述範圍內為較佳。When the phenol compound is contained, the content of the phenol compound can be, for example, 15 parts by mass or less with respect to 100 parts by mass in total of the acrylic polymer, the acrylic monomer, the maleimide compound, and the phenol compound. Regarding the phenolic compound, one type of phenolic compound may be contained alone, or two or more types of phenolic compounds may be contained simultaneously. When two or more types of phenolic compounds are used in combination, it is preferable that the total content of the phenolic compounds in the resin layer is within the above-mentioned range.
＜填料＞ 作為填料，能夠使用無機填充劑、有機填充劑、導電性粒子等。尤其，從降低線膨脹係數或提高可靠性的觀點考慮，使用無機填充劑（例如，二氧化矽填料）為較佳。＜Packing＞ As a filler, an inorganic filler, an organic filler, electroconductive particle, etc. can be used. In particular, it is preferable to use an inorganic filler (for example, a silica filler) from the viewpoint of reducing the coefficient of linear expansion or improving reliability.
在使用填料之情況下，填料的含量例如相對於丙烯酸聚合物、丙烯酸單體、順丁烯二醯亞胺化合物及填料的合計100質量份能夠設為30質量份以下。關於填料，可以單獨含有1種類的填料，亦可以同時含有2種類以上的填料。在併用2種類以上的填料之情況下，樹脂層中的填料的含量的合計在上述範圍內為較佳。When a filler is used, the content of the filler can be, for example, 30 parts by mass or less with respect to 100 parts by mass in total of the acrylic polymer, the acrylic monomer, the maleimide compound, and the filler. As for the filler, one type of filler may be contained alone, or two or more types of filler may be contained simultaneously. When two or more types of fillers are used in combination, it is preferable that the total content of the fillers in the resin layer is within the above range.
[接合體的一例]
圖14係表示本發明的實施形態的接合體的一例之示意圖，圖15係表示本發明的實施形態的接合體的另一例之示意圖。再者，圖14所示之積層器件40表示接合體的一例，圖15所示之積層器件40表示接合體的另一例。上述結構體10（參閱圖1）可以用作顯示出各向異性導電性之各向異性導電性構件45。積層器件具有導電構件和各向異性導電性構件，該導電構件具備具有導電性之導電部，並且積層器件使導電部與各向異性導電性構件的突出部接觸而接合。
圖14所示之積層器件40例如為半導體元件42、各向異性導電性構件45及半導體元件44沿積層方向Ds依序接合並電連接者。在各向異性導電性構件45中，導體14（參閱圖1）與積層方向Ds平行地配置，並且在積層方向Ds上具有導電性。
再者，由所積層之半導體元件42、各向異性導電性構件45及半導體元件44構成接合體41。
積層器件40為將1個半導體元件44接合到1個半導體元件42之形態，但是並不限定於此。如圖15所示之積層器件40，可以為將3個半導體元件42、44、46經由各向異性導電性構件45進行接合之形態。由3個半導體元件42、44、46和2個各向異性導電性構件45構成積層器件40。由所積層之半導體元件42、各向異性導電性構件45、半導體元件44、各向異性導電性構件45及半導體元件46構成接合體41。
半導體元件42、44、46為具備具有導電性之導電部之導電構件。具備具有導電性之導電部之導電構件並不限定於半導體元件，可以為具有電極之基板。具有電極之基板例如為配線基板及中介層等。
再者，積層器件的形態並無特別限定，例如可以舉出SoC（System on a chip：晶片系統）、SiP（System in Package：系統級封裝）、PoP（Package on Package：堆疊式封裝）、PiP（Package in Package：封裝內封裝）、CSP（Chip Scale Package：晶片尺寸封裝）、TSV（Through Silicon Via：矽穿孔）等。[An example of a joint body]
FIG. 14 is a schematic diagram showing an example of the joined body according to the embodiment of the present invention, and FIG. 15 is a schematic diagram showing another example of the joined body according to the embodiment of the present invention. In addition, the
積層器件40可以具有作為光學感測器而發揮功能之半導體元件。例如，半導體元件和感測器晶片（未圖示）沿積層方向Ds積層。在感測器晶片上可以設置有透鏡。
此時，半導體元件為形成有邏輯電路者，只要能夠處理由感測器晶片獲得之訊號，則其結構並無特別限定。
感測器晶片具有檢測光之光感測器。關於光感測器，只要能夠檢測光，則並無特別限定，例如可以使用CCD（Charge Coupled Device：電荷耦合元件）圖像感測器或CMOS（Complementary Metal Oxide Semiconducto：互補式金屬氧化物半導體）圖像感測器。
關於透鏡，只要能夠將光聚焦到感測器晶片上，則其結構並無特別限定，例如可以使用稱為微透鏡者。
再者，若將具備具有導電性之導電部之導電構件與結構體進行接合，則為接合體。然而，結構體的接合對象為具有電極之半導體元件，若將半導體元件與結構體進行接合，則接合者成為器件。The
[接合體的製造方法]
接著，作為接合體的製造方法，對具有圖14所示之各向異性導電性構件45之積層器件40的製造方法進行說明。
圖16及圖17係按步驟順序表示本發明的實施形態的接合體的製造方法的一例之示意性剖面圖。在圖16及圖17中，對與圖14及圖15所示之積層器件40及半導體元件42、44相同的構成物標註相同符號，並省略其詳細說明。
再者，圖16及圖17所示之積層器件40的製造方法與晶片上晶片相關。[Manufacturing method of joined body]
Next, as a method of manufacturing a bonded body, a method of manufacturing the
在製造具有各向異性導電性構件45之積層器件40時，首先，準備圖16所示之半導體元件42、半導體元件44及各向異性導電性構件45。半導體元件42例如在半導體元件部50上設置有複數個電極52，該電極52用於進行與外部的訊號的交換或者電壓或電流的交換。各電極52藉由絕緣層54電絕緣。電極52例如比絕緣層54的表面54a更突出。When manufacturing the
半導體元件44為與半導體元件42相同的結構。半導體元件44例如在中介層基板51上設置有複數個電極53，該電極53用於進行與外部的訊號的交換或者電壓或電流的交換。各電極53藉由絕緣層55電絕緣。電極53例如比絕緣層55的表面55a更突出。中介層基板51例如具有引出配線層，並且積層器件40藉由電極53與外部電連接。The
各向異性導電性構件45具備複數個導體14，導體14具有從絕緣膜12的表面12a突出之突出部14a和從背面12b突出之突出部14b。進而，樹脂層20分別局部設置於絕緣膜12的表面12a及背面12b上。再者，各向異性導電性構件45為與上述結構體10相同的結構，因此省略其詳細說明。The anisotropically
如圖16所示，半導體元件42和半導體元件44隔著各向異性導電性構件45與電極53和電極52對向配置。
此時，使用分別設置於半導體元件42、44和各向異性導電性構件45上之對準標記（未圖示）進行對準。
再者，關於使用了對準標記之對準，例如只要能夠獲取對準標記的圖像或反射像並求出對準標記的位置資訊，則並無特別限定，能夠適當利用公知的對準方法。As shown in FIG. 16 , the
接著，使半導體元件42、各向異性導電性構件45及半導體元件44接近，如圖17所示，積層半導體元件42、各向異性導電性構件45及半導體元件44，在使半導體元件42、各向異性導電性構件45及半導體元件44對準之狀態下，將半導體元件42、各向異性導電性構件45及半導體元件44進行接合。藉此，半導體元件42、各向異性導電性構件45及半導體元件44彼此接合，從而能夠獲得積層器件40。
如此，能夠經過接合步驟而獲得接合體，該接合步驟藉由使結構體的導體與導電部接觸而接合具備具有導電性之導電部之導電構件與結構體。
再者，在各向異性導電性構件45中，樹脂層20分別局部設置於絕緣膜12的表面12a及背面12b上。因此，在輸送各向異性導電性構件45時抑制帶電，操作變得容易，從而能夠容易地在半導體元件42與半導體元件44之間配置各向異性導電性構件45。
又，在接合時，局部設置有樹脂層20，因此能夠減小接合時所需之力。Next, the
[積層器件的製造方法的一例]
接著，關於使用了結構體之器件的製造方法的一例，以上述圖14所示之積層器件40為例進行說明。
使用了結構體之積層器件的製造方法的一例與晶片上晶圓相關。
圖18～圖20係按步驟順序表示使用了本發明的實施形態的結構體之積層器件的製造方法的一例之示意圖。
在使用了結構體之積層器件的製造方法的一例中，在第1半導體晶圓60的表面60a上有複數個元件區域（未圖示），並且在各元件區域上設置有各向異性導電性構件45。
接著，朝向第1半導體晶圓60的各向異性導電性構件45配置半導體元件44。半導體元件44具有電極（未圖示）。
接著，使用半導體元件44的對準標記和第1半導體晶圓60的對準標記，使半導體元件44相對於第1半導體晶圓60進行對準。
再者，關於對準，只要能夠獲得針對第1半導體晶圓60的對準標記的圖像或反射像和半導體元件44的對準標記的圖像或反射像的數位圖像資料，則其結構並無特別限定，能夠適當利用公知的攝像裝置。[An example of a method for manufacturing a multilayer device]
Next, an example of a method of manufacturing a device using a structure will be described by taking the above-described
接著，將半導體元件44載置於設置在第1半導體晶圓60的元件區域上之各向異性導電性構件45上，例如施加預先設定之壓力，加熱至預先設定之溫度，並保持預先設定之時間，從而進行臨時接合。將其針對所有半導體元件44進行，如圖19所示，將所有半導體元件44臨時接合到第1半導體晶圓60的元件區域上。
臨時接合例如利用局部設置之樹脂層20（參閱圖1）。然而，並不限定於使用樹脂層20（參閱圖1）。例如，可以藉由點膠機等將密封樹脂等供給至第1半導體晶圓60的各向異性導電性構件45上，從而將半導體元件44臨時接合到第1半導體晶圓60的元件區域上，亦可以在第1半導體晶圓60上，使用事先供給之絕緣性樹脂膜（NCF（Non-conductive Film：非導電膜）），將半導體元件44臨時接合到元件區域上。Next, the
接著，在將所有半導體元件44臨時接合到第1半導體晶圓60的元件區域上之狀態下，對半導體元件44施加預先設定之壓力，加熱至預先設定之溫度，並保持預先設定之時間，從而將複數個半導體元件44全部集中經由各向異性導電性構件45接合到第1半導體晶圓60的元件區域上。該接合稱為正式接合。藉此，半導體元件44的端子（未圖示）與第1半導體晶圓60的各向異性導電性構件45接合。在正式接合時，局部設置有樹脂層20（參閱圖1），因此能夠減小接合時所需之力。正式接合相當於接合步驟，該接合步驟藉由使結構體的導體與半導體元件44的電極接觸而接合半導體元件44的電極與各向異性導電性構件45亦即結構體10。
接著，如圖20所示，藉由切割或雷射劃線等將接合有半導體元件44之第1半導體晶圓60按每個元件區域形成為單片。藉此，能夠獲得半導體元件42和半導體元件44彼此接合而成之積層器件40。Next, in a state where all the
再者，在臨時接合時，若臨時接合強度弱，則在輸送步驟等及接合之前的步驟中產生偏移，因此臨時接合強度變得重要。 又，臨時接合步驟中之溫度條件及加壓條件並無特別限定，可以例示出後述溫度條件及加壓條件。Furthermore, in the case of temporary bonding, when the temporary bonding strength is weak, deviation occurs in the conveying step and the like and the steps before bonding, so the temporary bonding strength becomes important. In addition, the temperature conditions and pressure conditions in the temporary bonding step are not particularly limited, and the temperature conditions and pressure conditions to be described later can be exemplified.
正式接合中之溫度條件及加壓條件並無特別限定。藉由在適當的條件下進行正式接合，樹脂層在半導體元件44的電極之間流動而難以殘存於接合部中。如上所述，在正式接合中，藉由集中進行複數個半導體元件44的接合，能夠減少節拍時間，從而能夠提高生產率。
再者，圖15所示之結構的積層器件40亦能夠以上述方式進行製造。又，圖14及圖15所示之積層器件40均能夠藉由使用了晶圓上晶圓之製造方法進行製造。The temperature conditions and pressure conditions in the main joining are not particularly limited. By performing the main bonding under appropriate conditions, the resin layer flows between the electrodes of the
再者，上述半導體元件42、半導體元件44及半導體元件46具有元件區域（未圖示）。關於元件區域，如上所述。如上所述，在元件區域上形成有元件構成電路等，在半導體元件上例如設置有再配線層（未圖示）。
在積層器件中，例如能夠設為具有邏輯電路之半導體元件和具有記憶體電路之半導體元件的組合。又，半導體元件可以均具有記憶體電路，並且亦可以均具有邏輯電路。又，作為積層器件40中之半導體元件的組合，可以為感測器、致動器及天線等與記憶體電路和邏輯電路的組合，並且依據積層器件40的用途等適當決定。In addition, the
〔結構體的接合對象物〕 如上所述，結構體的接合對象物例示出半導體元件，但是例如為具有電極或元件區域者。作為具有電極者，例如可以例示出單獨發揮特定功能之半導體元件等，但是亦包含複數個元件聚集而發揮特定功能者。進而，亦包含僅傳遞配線構件等的電訊號者，並且印刷電路板（printed wiring board）等亦包含於具有電極者中。 元件區域為形成有用於作為電子元件而發揮功能的各種元件構成電路等之區域。元件區域例如為形成有如快閃記憶體等的記憶體電路、如微處理器及FPGA（field-programmable gate array：場可編程閘陣列）等的邏輯電路之區域、形成有無線標籤等通訊模組以及配線之區域。除此以外，在元件區域上還可以形成有MEMS（Micro Electro Mechanical Systems：微機電系統）。作為MEMS，例如可以舉出感測器、致動器及天線等。感測器例如包括加速度、聲音及光等各種感測器。 如上所述，在元件區域上形成有元件構成電路等，並且設置電極（未圖示）以將半導體晶片與外部電連接。元件區域具有形成有電極之電極區域。再者，元件區域的電極例如為Cu柱。電極區域基本上是指包含所形成之所有電極之區域。然而，若分開設置電極，則設置有各電極之區域亦稱為電極區域。 作為結構體的形態，可以為如半導體晶片那樣形成為單片者，亦可以為如半導體晶圓的形態，亦可以為配線層的形態。 又，結構體與接合對象物接合，但是接合對象物並不特別限定於上述半導體元件等，例如晶圓狀態的半導體元件、晶片狀態的半導體元件、印刷電路板及散熱器等成為接合對象物。[Structure object to be joined] As described above, the bonding object of the structure is an example of a semiconductor element, but it is, for example, one having an electrode or an element region. As those having electrodes, for example, a semiconductor element or the like that individually exhibits a specific function can be exemplified, but a plurality of elements are also included to exhibit a specific function in aggregate. Furthermore, those that transmit only electrical signals of wiring members and the like are also included, and those having electrodes are also included such as printed wiring boards. The element region is a region in which various element constituting circuits and the like for functioning as electronic elements are formed. The device area is, for example, an area where a memory circuit such as a flash memory is formed, a logic circuit such as a microprocessor and an FPGA (field-programmable gate array) is formed, and a communication module such as a wireless tag is formed and wiring area. In addition to this, MEMS (Micro Electro Mechanical Systems: Micro Electro Mechanical Systems) may be formed on the element region. As MEMS, a sensor, an actuator, an antenna, etc. are mentioned, for example. The sensor includes, for example, various sensors such as acceleration, sound, and light. As described above, an element constituting circuit and the like are formed on the element region, and electrodes (not shown) are provided to electrically connect the semiconductor wafer to the outside. The element region has an electrode region where electrodes are formed. In addition, the electrode of the element region is, for example, a Cu pillar. The electrode area basically refers to the area including all electrodes formed. However, if the electrodes are provided separately, the region where each electrode is provided is also referred to as an electrode region. As the form of the structure, it may be formed as a single piece like a semiconductor wafer, a form like a semiconductor wafer, or a form of a wiring layer may be used. In addition, although the structure is bonded to the bonding object, the bonding object is not particularly limited to the above-mentioned semiconductor elements, for example, wafer-state semiconductor elements, wafer-state semiconductor elements, printed circuit boards, and heat sinks are bonding objects.
〔半導體元件〕
關於上述半導體元件42、半導體元件44及半導體元件46，除了上述者以外，例如可以舉出邏輯LSI（Large Scale Integration：大型積體電路）（例如，ASIC（Application Specific Integrated Circuit：特殊應用積體電路）、FPGA（Field Programmable Gate Array：場域可程式閘陣列）、ASSP（Application Specific Standard Product：應用特定標準產品）等）、微處理器（例如，CPU（Central Processing Unit：中央處理單元）、GPU（Graphics Processing Unit：圖案處理單元）等）、記憶體（例如，DRAM（Dynamic Random Access Memory：動態隨機存取記憶體）、HMC（Hybrid Memory Cube：混合記憶體立方體）、MRAM（MagneticRAM：磁記憶體）和PCM（Phase-Change Memory：相變化記憶體）、ReRAM（Resistive RAM：可變電阻式記憶體）、FeRAM（Ferroelectric RAM：鐵電隨機存取記憶體）、快閃記憶體（NAND（Not AND）快閃）等）、LED（Light Emitting Diode：發光二極體）、（例如，攜式終端的微快閃、車載用、投影儀光源、LCD背光、普通照明等）、功率/器件、模擬IC（Integrated Circuit：積體電路）、（例如，DC（Direct Current：直流電）-DC（Direct Current：直流電）轉換器、絕緣閘雙極電晶體（IGBT）等）、MEMS（Micro Electro Mechanical Systems：微機電系統）、（例如，加速度感測器、壓力感測器、振子、陀螺儀感測器等）、無線（例如，GPS（Global Positioning System：全球定位系統）、FM（Frequency Modulation：調頻）、NFC（Nearfieldcommunication：近場通訊）、RFEM（RF Expansion Module：射頻擴展模組）、MMIC（Monolithic Microwave Integrated Circuit：單晶微波積體電路）、WLAN（WirelessLocalAreaNetwork：無線區域網路）等）、離散元件、BSI（Back Side Illumination：背面照度）、CIS（Contact Image Sensor：接觸式影像感測器）、相機模組、CMOS（Complementary Metal Oxide Semiconductor）、被動元件、SAW（Surface Acoustic Wave：表面聲波）濾波器、RF（Radio Frequency：射頻）濾波器、RFIPD（Radio Frequency Integrated Passive Devices：射頻整合式被動元件）、BB（Broadband：寬頻）等。
半導體元件例如為由1個完成者，並且為由半導體元件單獨發揮電路或感測器等的特定功能者。半導體元件可以具有中介層功能。又，例如，亦能夠在具有中介層功能之器件上積層具有邏輯電路之邏輯晶片及記憶體晶片等複數個器件。又，此時，即使每個器件的電極尺寸不同亦能夠進行接合。
再者，作為積層器件，並不限定於將複數個半導體元件接合到1個半導體元件上之形態亦即一對複數個的形態，亦可以為將複數個半導體元件與複數個半導體元件進行接合之形態亦即複數個對複數個的形態。[Semiconductor element]
As for the
本發明基本上如上述構成。以上，對本發明的結構體、結構體的製造方法、接合體的製造方法及器件的製造方法進行了詳細說明，但是本發明並不限定於上述實施形態，可以在不脫離本發明的主旨的範圍內進行各種改良或變更，這是不言而喻的。The present invention is basically constructed as described above. As mentioned above, the structure, the method for manufacturing the structure, the method for manufacturing the bonded body, and the method for manufacturing the device of the present invention have been described in detail, but the present invention is not limited to the above-described embodiments, and may be within a scope that does not deviate from the gist of the present invention. It is self-evident that various improvements or changes can be made within the product.
10:結構體
12:絕緣膜
12a:表面
12b:背面
13:細孔
14:導體
14a:突出部
14b:突出部
15:陽極氧化膜
20、21、22:樹脂層
20a、22a:樹脂層部
20b、22b:空間
30:鋁基板
30a:表面
31:阻層
32c:底部
32d:面
35:金屬
35a:金屬層
35b:金屬
40:積層器件
41:接合體
42、44、46:半導體元件
45:各向異性導電性構件
50:半導體元件
51:中介層基板
52、53:電極
54、55:絕緣層
54a、55a、60a:表面
60:第1半導體晶圓
d:平均直徑
Ds:積層方向
Dt:厚度方向
ha:平均突出長度
hb:平均長度
hm:平均厚度
ht:厚度
Rs:區域
p:中心間距離10: Structure
12: Insulating
圖1係表示本發明的實施形態的結構體的一例之示意性剖面圖。 圖2係表示本發明的實施形態的結構體的一例之示意性俯視圖。 圖3係表示本發明的實施形態的結構體的樹脂層的圖案的第1例之示意性俯視圖。 圖4係表示本發明的實施形態的結構體的樹脂層的圖案的第2例之示意性俯視圖。 圖5係表示本發明的實施形態的結構體的樹脂層的圖案的第3例之示意性俯視圖。 圖6係表示本發明的實施形態的結構體的樹脂層的微細圖案的一例之示意性俯視圖。 圖7係表示本發明的實施形態的結構體的製造方法的一例的一步驟之示意性剖面圖。 圖8係表示本發明的實施形態的結構體的製造方法的一例的一步驟之示意性剖面圖。 圖9係表示本發明的實施形態的結構體的製造方法的一例的一步驟之示意性剖面圖。 圖10係表示本發明的實施形態的結構體的製造方法的一例的一步驟之示意性剖面圖。 圖11係表示本發明的實施形態的結構體的製造方法的一例的一步驟之示意性剖面圖。 圖12係表示本發明的實施形態的結構體的製造方法的一例的一步驟之示意性剖面圖。 圖13係表示本發明的實施形態的結構體的製造方法的一例的一步驟之示意性剖面圖。 圖14係表示本發明的實施形態的接合體的一例之示意圖。 圖15係表示本發明的實施形態的接合體的另一例之示意圖。 圖16係表示本發明的實施形態的接合體的製造方法的一例的一步驟之示意性剖面圖。 圖17係表示本發明的實施形態的接合體的製造方法的一例的一步驟之示意性剖面圖。 圖18係表示使用了本發明的實施形態的結構體之積層器件的製造方法的一例的一步驟之示意圖。 圖19係表示使用了本發明的實施形態的結構體之積層器件的製造方法的一例的一步驟之示意圖。 圖20係表示使用了本發明的實施形態的結構體之積層器件的製造方法的一例的一步驟之示意圖。FIG. 1 is a schematic cross-sectional view showing an example of a structure according to an embodiment of the present invention. FIG. 2 is a schematic plan view showing an example of the structure according to the embodiment of the present invention. 3 is a schematic plan view showing a first example of the pattern of the resin layer of the structure according to the embodiment of the present invention. 4 is a schematic plan view showing a second example of the pattern of the resin layer of the structure according to the embodiment of the present invention. 5 is a schematic plan view showing a third example of the pattern of the resin layer of the structure according to the embodiment of the present invention. 6 is a schematic plan view showing an example of the fine pattern of the resin layer of the structure according to the embodiment of the present invention. 7 is a schematic cross-sectional view showing one step of an example of a method for producing a structure according to an embodiment of the present invention. 8 is a schematic cross-sectional view showing one step of an example of a method for producing a structure according to an embodiment of the present invention. 9 is a schematic cross-sectional view showing one step of an example of a method for producing a structure according to an embodiment of the present invention. 10 is a schematic cross-sectional view showing one step of an example of a method for producing a structure according to an embodiment of the present invention. 11 is a schematic cross-sectional view showing one step of an example of a method for producing a structure according to an embodiment of the present invention. 12 is a schematic cross-sectional view showing one step of an example of a method for producing a structure according to an embodiment of the present invention. 13 is a schematic cross-sectional view showing one step of an example of a method for producing a structure according to an embodiment of the present invention. FIG. 14 is a schematic diagram showing an example of a joined body according to an embodiment of the present invention. FIG. 15 is a schematic view showing another example of the joined body according to the embodiment of the present invention. 16 is a schematic cross-sectional view showing one step of an example of a method for producing a joined body according to an embodiment of the present invention. 17 is a schematic cross-sectional view showing one step of an example of a method for producing a joined body according to an embodiment of the present invention. FIG. 18 is a schematic diagram showing one step of an example of a method of manufacturing a multilayer device using the structure according to the embodiment of the present invention. FIG. 19 is a schematic diagram showing one step of an example of a method of manufacturing a multilayer device using the structure according to the embodiment of the present invention. FIG. 20 is a schematic diagram showing one step of an example of a method of manufacturing a multilayer device using the structure according to the embodiment of the present invention.
10:結構體 10: Structure
12:絕緣膜 12: Insulating film
12a:表面 12a: Surface
12b:背面 12b: Back
13:細孔 13: Pore
14:導體 14: Conductor
14a:突出部 14a: Protrusion
14b:突出部 14b: Protrusion
15:陽極氧化膜 15: Anodized film
20:樹脂層 20: Resin layer
20a:樹脂層部 20a: Resin layer part
20b:空間 20b: Space
d:平均直徑 d: average diameter
ha:平均突出長度 ha: average protrusion length
hb:平均長度 hb: average length
hm:平均厚度 hm: average thickness
ht:厚度 ht: thickness
p:中心間距離 p: distance between centers
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| TW202209352A true TW202209352A (en) | 2022-03-01 |
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| TW110128957A TW202209352A (en) | 2020-08-12 | 2021-08-05 | Structure, method for manufacturing structure, method for manufacturing assembly, and method for manufacturing device |
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| Country | Link |
|---|---|
| JP (1) | JPWO2022034769A1 (en) |
| CN (1) | CN116057681A (en) |
| TW (1) | TW202209352A (en) |
| WO (1) | WO2022034769A1 (en) |
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| WO2021033467A1 (en) * | 2019-08-16 | 2021-02-25 | 富士フイルム株式会社 | Method for producing structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010129407A (en) * | 2008-11-28 | 2010-06-10 | Japan Aviation Electronics Industry Ltd | Electric connecting member |
| JP5363377B2 (en) * | 2010-02-19 | 2013-12-11 | 新光電気工業株式会社 | Wiring board and manufacturing method thereof |
| JP6375249B2 (en) * | 2015-03-02 | 2018-08-15 | 新光電気工業株式会社 | Wiring substrate, manufacturing method thereof, and semiconductor package |
| JP6600285B2 (en) * | 2016-08-31 | 2019-10-30 | 富士フイルム株式会社 | Manufacturing method of multilayer wiring board |
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2021
- 2021-07-13 JP JP2022542607A patent/JPWO2022034769A1/ja active Pending
- 2021-07-13 WO PCT/JP2021/026279 patent/WO2022034769A1/en active Application Filing
- 2021-07-13 CN CN202180056490.5A patent/CN116057681A/en active Pending
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| WO2022034769A1 (en) | 2022-02-17 |
| JPWO2022034769A1 (en) | 2022-02-17 |
| CN116057681A (en) | 2023-05-02 |
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