TW202142659A - Dicing die-bonding film - Google Patents

Dicing die-bonding film Download PDF

Info

Publication number
TW202142659A
TW202142659A TW110112516A TW110112516A TW202142659A TW 202142659 A TW202142659 A TW 202142659A TW 110112516 A TW110112516 A TW 110112516A TW 110112516 A TW110112516 A TW 110112516A TW 202142659 A TW202142659 A TW 202142659A
Authority
TW
Taiwan
Prior art keywords
layer
adhesive layer
die
molecular weight
mass
Prior art date
Application number
TW110112516A
Other languages
Chinese (zh)
Inventor
福井章洋
大西謙司
木村雄大
田中俊平
Original Assignee
日商日東電工股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日東電工股份有限公司 filed Critical 日商日東電工股份有限公司
Publication of TW202142659A publication Critical patent/TW202142659A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)

Abstract

A dicing die bonding film according to the present invention includes: a dicing tape including a base layer and an adhesive layer laminated on the base layer; and a die bonding layer laminated on the adhesive layer of the dicing tape. The adhesive layer includes a photopolymerization initiator. A polydispersity Mw/Mn, which is a ratio of a peak mass average molecular weight Mw appearing on the highest molecular weight side of a molecular weight distribution curve obtained by GPC measurement of the adhesive layer before being cured to a peak number average molecular weight Mn appearing on the highest molecular weight side thereof, is 0.3 or more.

Description

切晶黏晶膜Diced wafer

本發明係關於一種切晶黏晶膜。The present invention relates to a diced chip mucous film.

先前，已知於半導體裝置之製造中，為了獲得黏晶用之半導體晶片而使用切晶黏晶膜(例如專利文獻1)。 上述切晶黏晶膜具備於基材層上積層有黏著劑層之切晶帶、以及於該切晶帶之黏著劑層上可剝離地積層之黏晶層。In the past, it is known that in the manufacture of semiconductor devices, a dicing die-bonding film is used in order to obtain a semiconductor wafer for die-bonding (for example, Patent Document 1). The dicing die film includes a die-cutting tape laminated with an adhesive layer on a substrate layer, and a die-cutting tape layered releasably on the adhesive layer of the die-cutting tape.

而且，作為使用上述切晶黏晶膜獲得黏晶用之半導體晶片(Die)之方法，已知採用具有下述步驟之方法：於將要藉由切斷處理將半導體晶圓加工成晶片(Die)之半導體晶圓上形成槽之半切割步驟；對半切割步驟後之半導體晶圓進行磨削而減薄厚度之背面研磨步驟；將背面研磨步驟後之半導體晶圓之一面(例如與電路面相反一側之面)貼附於黏晶層，將半導體晶圓固定於切晶帶之安裝步驟；擴大經半切割加工之半導體晶片彼此之間隔之擴展步驟；維持半導體晶片彼此之間隔之切口維持步驟；及將黏晶層與黏著劑層之間剝離，於貼附有黏晶層之狀態下取出半導體晶片之拾取步驟。 並且，於上述拾取步驟中，以貼附於黏晶層之狀態取出之半導體晶片(以下亦稱為帶黏晶層之半導體晶片)被接著於作為被接著體之佈線基板。Moreover, as a method for obtaining a semiconductor wafer (Die) for die bonding using the above-mentioned die-cutting die-bonding film, a method having the following steps is known: the semiconductor wafer will be processed into a die by a cutting process. The half-cutting step of forming grooves on the semiconductor wafer; the back grinding step of grinding the semiconductor wafer after the half-cutting step to reduce the thickness; One side surface) is attached to the die bonding layer to fix the semiconductor wafer to the dicing tape; the step of expanding the distance between the semi-cut semiconductor chips; the step of maintaining the gap between the semiconductor chips ; And peeling between the die bond layer and the adhesive layer, and take out the semiconductor chip in the state where the die bond layer is attached. In addition, in the above-mentioned pickup step, the semiconductor wafer taken out in a state of being attached to the die-bonding layer (hereinafter also referred to as a semiconductor wafer with a die-bonding layer) is attached to the wiring substrate as the bonded body.

又，上述黏著劑層通常包含：(甲基)丙烯酸系樹脂等樹脂、與該樹脂反應而使上述樹脂彼此聚合之交聯劑、及藉由照射紫外線等輻射線而產生能使上述樹脂彼此發生連鎖聚合之活性種之光聚合起始劑(例如專利文獻2)。於此種黏著劑層中，照射紫外線等輻射線時進行硬化反應，從而與上述黏晶層之間之剝離力降低，因此，能夠相對較容易地進行該黏著劑層自上述黏晶層之剝離。 [先前技術文獻] [專利文獻]In addition, the adhesive layer usually includes resins such as (meth)acrylic resins, a crosslinking agent that reacts with the resins to polymerize the resins with each other, and is generated by irradiating radiation such as ultraviolet rays to cause the resins to interact with each other. The photopolymerization initiator of the active species of chain polymerization (for example, Patent Document 2). In this type of adhesive layer, the curing reaction occurs when irradiated with radiation such as ultraviolet rays, thereby reducing the peeling force between the adhesive layer and the above-mentioned die-bonding layer. Therefore, the adhesive layer can be peeled from the above-mentioned die-bonding layer relatively easily. . [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2019-9203號公報 [專利文獻2]日本專利特開2019-67996號公報[Patent Document 1] Japanese Patent Laid-Open No. 2019-9203 [Patent Document 2] Japanese Patent Laid-Open No. 2019-67996

[發明所欲解決之問題][The problem to be solved by the invention]

但如上所述，上述黏晶層雖然在上述拾取步驟中從上述黏著劑層剝離(分離)，但是，於上述拾取步驟之前，上述黏晶層及上述黏著劑層為接觸之狀態。 因此，如上所述，於上述黏著劑層中包含上述光聚合起始劑時，有時上述光聚合起始劑會從上述黏著劑層向上述黏晶層轉移。 如此，於上述光聚合起始劑從上述黏著劑層向上述黏晶層轉移時，有時變得不滿足上述黏著劑層所要求之特性、或者不滿足上述黏晶層所要求之特性，故而欠佳。 但是，對於抑制上述光聚合起始劑從上述黏著劑層向上述黏晶層之轉移，難以說已經進行了充分之研究。However, as described above, although the die-bonding layer is peeled off (separated) from the adhesive layer in the pickup step, the die-bonding layer and the adhesive layer are in contact before the pickup step. Therefore, as described above, when the photopolymerization initiator is contained in the adhesive layer, the photopolymerization initiator may be transferred from the adhesive layer to the crystal bonding layer. As such, when the photopolymerization initiator is transferred from the adhesive layer to the die-sticking layer, it may not meet the characteristics required by the adhesive layer or the die-sticker layer. Suboptimal. However, it is hard to say that sufficient research has been conducted to suppress the transfer of the photopolymerization initiator from the adhesive layer to the die-sticking layer.

因此，本發明之課題在於，提供一種能夠相對地抑制光聚合起始劑從黏著劑層向黏晶層轉移之切晶黏晶膜。 [解決問題之技術手段]Therefore, the subject of the present invention is to provide a diced die sticking film capable of relatively suppressing the transfer of the photopolymerization initiator from the adhesive layer to the die sticking layer. [Technical means to solve the problem]

本發明之切晶黏晶膜具備： 於基材層上積層有黏著劑層之切晶帶，及 於上述切晶帶之黏著劑層上積層之黏晶層， 上述黏著劑層包含黏著劑及光聚合起始劑， 於對硬化前之上述黏著劑層進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之重量平均分子量Mw相對於在最高分子量側出現之峰之數平均分子量Mn之比、即多分散度Mw/Mn為1.3以上。 The diced chip adhesive film of the present invention has: Laminating a dicing tape with an adhesive layer on the substrate layer, and A die-bonding layer laminated on the adhesive layer of the above-mentioned die-cutting tape, The adhesive layer includes an adhesive and a photopolymerization initiator, In the molecular weight distribution curve obtained by GPC measurement of the adhesive layer before curing, the ratio of the weight average molecular weight Mw of the peak appearing on the highest molecular weight side to the number average molecular weight Mn of the peak appearing on the highest molecular weight side, that is, polydispersity The degree Mw/Mn is 1.3 or more.

於上述切晶黏晶膜中， 於對硬化前之上述黏著劑層進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之峰頂分子量之值較佳為33,000以下。In the above-mentioned diced chip mucous film, In the molecular weight distribution curve obtained by GPC measurement of the adhesive layer before curing, the peak top molecular weight of the peak appearing on the highest molecular weight side is preferably 33,000 or less.

於上述切晶黏晶膜中， 硬化前之上述黏著劑層較佳為包含未達32質量%之溶膠成分。In the above-mentioned diced chip mucous film, The adhesive layer before curing preferably contains less than 32% by mass of the sol component.

於上述切晶黏晶膜中， 於上述黏著劑層之硬化後，上述黏晶層相對於上述黏著劑層之剝離力較佳為未達0.18 N/20 mm。In the above-mentioned diced chip mucous film, After the adhesive layer is hardened, the peeling force of the crystal bonding layer relative to the adhesive layer is preferably less than 0.18 N/20 mm.

以下，針對本發明之一個實施方式進行說明。Hereinafter, an embodiment of the present invention will be described.

[切晶黏晶膜] 如圖1所示，本實施方式之切晶黏晶膜20具備於基材層1上積層有黏著劑層2之切晶帶10、以及於切晶帶10之黏著劑層2上積層之黏晶層3。 切晶黏晶膜20中，於黏晶層3上貼附半導體晶圓。 於使用了切晶黏晶膜20之半導體晶圓之切斷中，黏晶層3亦與半導體晶圓一同被切斷。黏晶層3被切斷成與單片化之複數個半導體晶片之尺寸相當之大小。藉此，能夠獲得帶黏晶層3之半導體晶片。[Cut crystal stick film] As shown in FIG. 1, the chip dicing die film 20 of this embodiment includes a dicing tape 10 on which an adhesive layer 2 is laminated on a substrate layer 1, and an adhesive laminated on the adhesive layer 2 of the dicing tape 10晶层3。 Crystal layer 3. In the die bonding film 20, a semiconductor wafer is attached to the die bonding layer 3. In the cutting of the semiconductor wafer using the dicing die bonding film 20, the die bonding layer 3 is also cut together with the semiconductor wafer. The die bonding layer 3 is cut into a size equivalent to the size of a plurality of singulated semiconductor chips. In this way, a semiconductor wafer with an adhesive layer 3 can be obtained.

於本實施方式之切晶黏晶膜20中，黏著劑層2包含黏著劑及光聚合起始劑。黏著劑層2藉由黏著來保持用於單片化為半導體晶片之半導體晶圓。In the chip adhesive film 20 of this embodiment, the adhesive layer 2 includes an adhesive and a photopolymerization initiator. The adhesive layer 2 holds the semiconductor wafer for singulation into semiconductor wafers by adhesion.

作為上述黏著劑，可列舉出在切晶帶10之使用過程中能夠藉由來自外部之作用使黏著力降低之黏著劑(以下亦稱為黏著降低型黏著劑)。As the above-mentioned adhesive, an adhesive capable of reducing the adhesive force by an external action during the use of the dicing tape 10 (hereinafter also referred to as an adhesive reduction type adhesive) can be cited.

於使用黏著降低型黏著劑作為黏著劑時，於切晶帶10之使用過程中，可以分開使用黏著劑層2顯示較高之黏著力之狀態(以下稱為高黏著狀態)及顯示較低之黏著力之狀態(以下稱為低黏著狀態)。 例如，於將貼附於切晶帶10之半導體晶圓供於切斷時，為了抑制藉由切斷半導體晶圓而單片化之複數個半導體晶片從黏著劑層2浮起或剝離而利用高黏著狀態。 與此相對，於切斷半導體晶圓後，為了拾取單片化之複數個半導體晶片而利用低黏著狀態，以便容易從黏著劑層2拾取複數個半導體晶片。When using an adhesive with reduced adhesion as an adhesive, during the use of the dicing tape 10, the adhesive layer 2 can be used separately to show a higher adhesion state (hereinafter referred to as a high adhesion state) and a lower state The state of adhesion (hereinafter referred to as low adhesion state). For example, when the semiconductor wafer attached to the dicing tape 10 is used for cutting, it is used in order to suppress the floating or peeling of a plurality of semiconductor wafers singulated by cutting the semiconductor wafer from the adhesive layer 2 High adhesion state. On the other hand, after cutting the semiconductor wafers, in order to pick up a plurality of singulated semiconductor wafers, a low adhesion state is used so that the plurality of semiconductor wafers can be easily picked up from the adhesive layer 2.

作為上述黏著降低型黏著劑，可列舉出例如：能夠在切晶帶10之使用過程中藉由輻射線而硬化之黏著劑(以下稱為輻射線硬化黏著劑)。As the above-mentioned adhesion reduction type adhesive, for example, an adhesive that can be cured by radiation during use of the dicing tape 10 (hereinafter referred to as a radiation curing adhesive).

作為上述輻射線硬化黏著劑，可列舉出例如：藉由照射電子束、紫外線、α射線、β射線、γ射線或X射線而硬化之類型之黏著劑。該等當中，較佳為使用藉由照射紫外線而硬化之黏著劑(紫外線硬化黏著劑)。Examples of the above-mentioned radiation-curable adhesive include adhesives that are cured by irradiation with electron beams, ultraviolet rays, α-rays, β-rays, γ-rays, or X-rays. Among them, it is preferable to use an adhesive that is cured by irradiating ultraviolet rays (ultraviolet curing adhesive).

作為上述輻射線硬化黏著劑，可列舉出例如添加型之輻射線硬化黏著劑，其包含作為主成分之基礎聚合物、以及具有輻射線聚合性之碳-碳雙鍵等官能基之輻射線聚合性單體成分、輻射線聚合性低聚物成分。 作為上述基礎聚合物，較佳為使用丙烯酸系聚合物。Examples of the above-mentioned radiation-curing adhesive include, for example, an additive type radiation-curing adhesive, which contains a basic polymer as a main component and a radiation polymerization of functional groups such as a carbon-carbon double bond with radiation polymerizability. Monomer components, radiation polymerizable oligomer components. As the above-mentioned base polymer, it is preferable to use an acrylic polymer.

作為上述丙烯酸系聚合物，可列舉包含來自(甲基)丙烯酸酯之單體單元者。作為(甲基)丙烯酸酯，可列舉出例如(甲基)丙烯酸烷基酯、(甲基)丙烯酸環烷基酯及(甲基)丙烯酸芳基酯等。 作為上述丙烯酸系聚合物，較佳為使用例如丙烯酸2-羥基乙酯(HEA)、丙烯酸乙酯(EA)、丙烯酸丁酯(BA)、丙烯酸2-乙基己酯(2EHA)、丙烯酸異壬酯(INA)、丙烯酸月桂酯(LA)、4-丙烯醯基嗎啉(AMCO)、甲基丙烯酸2-異氰酸根合乙酯(MOI)等。 該等丙烯酸系聚合物可僅使用1種，亦可組合使用2種以上。Examples of the acrylic polymer include those containing monomer units derived from (meth)acrylate. Examples of (meth)acrylates include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. As the acrylic polymer, it is preferable to use, for example, 2-hydroxyethyl acrylate (HEA), ethyl acrylate (EA), butyl acrylate (BA), 2-ethylhexyl acrylate (2EHA), and isonon acrylate. Esters (INA), lauryl acrylate (LA), 4-propenylmorpholine (AMCO), 2-isocyanatoethyl methacrylate (MOI), etc. Only one type of these acrylic polymers may be used, or two or more types may be used in combination.

作為上述輻射線聚合性單體成分，可列舉出例如：(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、以及1,4-丁二醇二(甲基)丙烯酸酯等。 作為上述輻射線聚合性低聚物成分，可列舉出例如胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物。 上述輻射線硬化黏著劑中之上述輻射線聚合性單體成分、上述輻射線聚合性低聚物成分之含有比率可在使黏著劑層2之黏著性適當下降之範圍內選擇。Examples of the above-mentioned radiation polymerizable monomer components include: (meth)acrylate urethane, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra (Meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and the like. As said radiation polymerizable oligomer component, various oligomers, such as a urethane type, a polyether type, a polyester type, a polycarbonate type, and a polybutadiene type, are mentioned, for example. The content ratio of the radiation polymerizable monomer component and the radiation polymerizable oligomer component in the radiation curable adhesive can be selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

作為黏著劑層2中包含之光聚合起始劑，可列舉出例如α-酮醇系化合物、苯乙酮系化合物、苯偶姻醚系化合物、縮酮系化合物、芳香族磺醯氯系化合物、光活性肟系化合物、二苯甲酮系化合物、9-氧硫𠮿

Figure 110112516-A0304-12-01
系化合物、樟腦醌、鹵代酮、醯基氧化膦、及醯基膦酸酯等。 作為上述光聚合起始劑，較佳為使用光自由基產生劑。光自由基產生劑藉由照射活性能量射線(例如電子束、紫外線、α射線、β射線、γ射線、或X射線)而產生自由基。 作為光自由基產生劑，可列舉出2-羥基-1-(4-(4-(2-羥基-2-甲基丙醯基)苯甲醯基)苯基)-2-甲基丙烷-1-酮(作為市售品，為IGM Resins公司製造之Omnirad 127)、2,2-二甲氧基-1,2-二苯基乙烷-1-酮(作為市售品，為IGM Resins公司製造之Omnirad 651)、1-羥基-環己基苯基酮(作為市售品，為IGM Resins公司製造之Omnirad 184)、1-[4-(2-羥基乙氧基)-苯基]-2-羥基-2-甲基-1-丙烷-1-酮(作為市售品，為IGM Resins公司製造之Omnirad 2959)、2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1(作為市售品，為IGM Resins公司製造之Omnirad 369E)、雙(2,4,6-三甲基苯甲醯基)-苯基氧化膦(作為市售品，為IGM Resins公司製造之Omnirad 819)、乙酮-1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-1-(O-乙醯基肟)(作為市售品，為Irgacure公司製造之OXE02)等。 該等之中，較佳為使用2-羥基-1-(4-(4-(2-羥基-2甲基丙醯基)苯甲醯基)苯基)-2-甲基丙烷-1-酮(作為市售品，為IGM Resins公司製造之Omnirad 127)。 黏著劑層2較佳為包含0.1質量份以上且10質量份以下之上述光聚合起始劑。Examples of the photopolymerization initiator contained in the adhesive layer 2 include α-keto alcohol-based compounds, acetophenone-based compounds, benzoin ether-based compounds, ketal-based compounds, and aromatic sulfonate-chlorine-based compounds. , Photoactive oxime compounds, benzophenone compounds, 9-oxysulfur 𠮿
Figure 110112516-A0304-12-01
Series compounds, camphorquinone, halogenated ketones, acyl phosphine oxide, and acyl phosphonate, etc. As the photopolymerization initiator, it is preferable to use a photoradical generator. The optical radical generator generates radicals by irradiating active energy rays (for example, electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays). As the photo-radical generator, 2-hydroxy-1-(4-(4-(2-hydroxy-2-methylpropanyl)benzyl)phenyl)-2-methylpropane- 1-ketone (as a commercial product, Omnirad 127 manufactured by IGM Resins), 2,2-dimethoxy-1,2-diphenylethane-1-one (as a commercial product, as IGM Resins Omnirad 651 manufactured by the company), 1-hydroxy-cyclohexyl phenyl ketone (as a commercially available product, Omnirad 184 manufactured by IGM Resins), 1-[4-(2-hydroxyethoxy)-phenyl]- 2-hydroxy-2-methyl-1-propan-1-one (as a commercially available product, Omnirad 2959 manufactured by IGM Resins), 2-benzyl-2-dimethylamino-1-(4- Morpholinylphenyl)-butanone-1 (as a commercially available product, Omnirad 369E manufactured by IGM Resins), bis(2,4,6-trimethylbenzyl)-phenylphosphine oxide (as Commercial products are Omnirad 819 manufactured by IGM Resins, ethyl ketone-1-[9-ethyl-6-(2-methylbenzyl)-9H-carbazol-3-yl]-1- (O-Acetyl oxime) (as a commercially available product, OXE02 manufactured by Irgacure) and the like. Among them, it is preferable to use 2-hydroxy-1-(4-(4-(2-hydroxy-2methylpropanyl)benzyl)phenyl)-2-methylpropane-1- Ketone (as a commercially available product, Omnirad 127 manufactured by IGM Resins). The adhesive layer 2 preferably contains 0.1 parts by mass or more and 10 parts by mass or less of the above-mentioned photopolymerization initiator.

本實施方式之切晶黏晶膜20中，於對硬化前之黏著劑層2進行GPC(凝膠滲透層析)測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之重量平均分子量Mw相對於在最高分子量側出現之峰之數平均分子量Mn之比、即多分散度Mw/Mn為1.3以上。 藉由使多分散度Mw/Mn為1.3以上，會變得在黏著劑層2中之高分子成分之間適度配混低分子成分，因此，能夠相對地抑制上述光聚合起始劑從黏著劑層2向黏晶層3轉移。 又，上述多分散度Mw/Mn較佳為2.0以上。藉由使上述多分散度Mw/Mn為2.0以上，能夠相對地抑制上述光聚合起始劑從黏著劑層2向黏晶層3轉移，並且，於後述之將黏晶層3與黏著劑層2之間剝離而以貼附有黏晶層3之狀態取出半導體晶片之拾取步驟中，能夠更容易地使黏晶層3從黏著劑層2剝離。 又，上述多分散度Mw/Mn較佳為10以下，更佳為5以下，進而較佳為3以下。 再者，於本說明書中，分子量分佈曲線係指微分分子量分佈曲線。In the diced wafer 20 of the present embodiment, in the molecular weight distribution curve obtained by GPC (gel permeation chromatography) measurement of the adhesive layer 2 before curing, the weight average molecular weight Mw of the peak appearing on the side of the highest molecular weight The ratio of the number average molecular weight Mn to the peak appearing on the highest molecular weight side, that is, the polydispersity Mw/Mn is 1.3 or more. By setting the polydispersity Mw/Mn to 1.3 or more, low-molecular components are appropriately blended between the high-molecular components in the adhesive layer 2. Therefore, it is possible to relatively suppress the photopolymerization initiator from being removed from the adhesive. The layer 2 is transferred to the sticky crystal layer 3. Moreover, it is preferable that the said polydispersity Mw/Mn is 2.0 or more. By setting the polydispersity Mw/Mn to be 2.0 or more, it is possible to relatively suppress the transfer of the photopolymerization initiator from the adhesive layer 2 to the adhesive layer 3, and the adhesive layer 3 and the adhesive layer will be described later. In the pick-up step of taking out the semiconductor wafer in a state where the die-bonding layer 3 is attached by peeling between the two, the die-bonding layer 3 can be peeled from the adhesive layer 2 more easily. In addition, the polydispersity Mw/Mn is preferably 10 or less, more preferably 5 or less, and still more preferably 3 or less. Furthermore, in this specification, the molecular weight distribution curve refers to the differential molecular weight distribution curve.

硬化前之黏著劑層2之GPC測定可藉由使用東曹公司製造之HLC-8220GPC作為分析裝置，對按照以下順序製備之測定試樣採用以下之測定條件來進行。The GPC measurement of the adhesive layer 2 before curing can be performed by using the HLC-8220GPC manufactured by Tosoh Corporation as the analysis device, and using the following measurement conditions for the measurement samples prepared in the following procedures.

[測定試樣之製備] (1)從硬化前之黏著劑層2取約0.2 g之樣品。 (2)利用網狀片材包裹上述樣品之後，於室溫(23±2℃)下在約30 mL之甲苯中浸漬1週。 (3)從甲苯中取出網狀片材，將網狀片材中包含之甲苯不溶成分去除，得到包含甲苯溶解成分之甲苯溶液。 (4)邊減壓邊在45℃以下之溫度下對上述甲苯溶液進行處理，從上述甲苯溶液中去除甲苯，得到甲苯溶解成分之固形物。 (5)使上述固形物以濃度成為0.2質量%之方式溶解於四氫呋喃(THF)中製成THF溶液之後，放置一晚。 (6)將放置了一晚之THF溶液用0.45 μm之膜濾器進行過濾，將得到之濾液作為測定試樣。[Preparation of test sample] (1) Take a sample of about 0.2 g from the adhesive layer 2 before hardening. (2) After wrapping the above sample with a mesh sheet, immerse it in about 30 mL of toluene at room temperature (23±2°C) for 1 week. (3) Take out the mesh sheet from the toluene, remove the toluene-insoluble components contained in the mesh sheet, and obtain a toluene solution containing toluene-soluble components. (4) The toluene solution is treated at a temperature of 45°C or lower while reducing pressure to remove the toluene from the toluene solution to obtain a solid substance of the toluene-soluble component. (5) After dissolving the solid substance in tetrahydrofuran (THF) so that the concentration becomes 0.2% by mass to prepare a THF solution, it is left overnight. (6) Filter the THF solution left overnight with a 0.45 μm membrane filter, and use the obtained filtrate as the measurement sample.

[測定條件] ・管柱：東曹公司製造之TSKgel quaudcolumn SuperHZ-L(以下稱為第1管柱)1根、及 東曹公司製造之TSKgel SuperHZM-M(以下稱為第2管柱)2根 上述各管柱以使2根上述第2管柱串聯連接於上述第1管柱之下游側，且後述之溶析液從上述第1管柱側流入之方式配置於上述分析裝置。 ・管柱溫度：40℃ ・溶析液：四氫呋喃(THF) ・流量：樣品泵流量 0.3 mL/分鐘 參比泵流量 1.0 mL/分鐘 ・注入量：10 μL ・檢測器：示差折射率檢測器(RI)[Measurement conditions] ・Tube column: 1 TSKgel quaudcolumn SuperHZ-L (hereinafter referred to as the first column) manufactured by Tosoh Corporation, and 2 TSKgel SuperHZM-M (hereinafter referred to as the second column) manufactured by Tosoh Corporation Each of the above-mentioned columns is arranged in the analysis device in such a manner that two of the above-mentioned second columns are connected in series on the downstream side of the above-mentioned first column, and the eluate described later flows in from the side of the above-mentioned first column. ・Column temperature: 40℃ ・Eluent: Tetrahydrofuran (THF) ・Flow rate: sample pump flow rate 0.3 mL/min Reference pump flow rate 1.0 mL/min ・Injection volume: 10 μL ・Detector: Differential refractive index detector (RI)

又，為了基於對上述測定試樣測得之結果得到分子量分佈曲線(微分分子量分佈曲線)，以成為以下之表1所示之配混質量之方式計量東曹公司製造之各標準聚苯乙烯，使計量之各標準聚苯乙烯溶解於100 mL之THF中，得到標準聚苯乙烯溶液STD1及標準聚苯乙烯溶液STD2，對其等亦使用上述測定裝置在上述測定條件下進行GPC測定。In addition, in order to obtain a molecular weight distribution curve (differential molecular weight distribution curve) based on the measurement results of the above-mentioned measurement samples, each standard polystyrene manufactured by Tosoh Corporation was measured so that the compounding quality shown in Table 1 below was obtained. The measured standard polystyrene was dissolved in 100 mL of THF to obtain a standard polystyrene solution STD1 and a standard polystyrene solution STD2, and the GPC measurement was carried out using the above-mentioned measuring device under the above-mentioned measuring conditions.

[表1] STD1 STD2 標準聚苯乙烯種類 重量平均分子量Mw 配混質量 標準聚苯乙烯種類 重量平均分子量Mw 配混質量 F380 3,840,000 10 mg F450 4,480,000 10 mg F128 1,110,000 10 mg F288 2,110,000 10 mg F40 397,000 10 mg F80 707,000 10 mg F10 96,900 10 mg F20 169,000 10 mg F2 17,400 10 mg F450 37,200 10 mg A5000 4,920 10 mg F1 9,490 10 mg A1000 1,013 14.8 mg A2500 2,500 10 mg    A500 589 19.7 mg [Table 1] STD1 STD2 Standard polystyrene type Weight average molecular weight Mw Compounding quality Standard polystyrene type Weight average molecular weight Mw Compounding quality F380 3,840,000 10 mg F450 4,480,000 10 mg F128 1,110,000 10 mg F288 2,110,000 10 mg F40 397,000 10 mg F80 707,000 10 mg F10 96,900 10 mg F20 169,000 10 mg F2 17,400 10 mg F450 37,200 10 mg A5000 4,920 10 mg F1 9,490 10 mg A1000 1,013 14.8 mg A2500 2,500 10 mg A500 589 19.7 mg

對於對上述測定試樣、上述STD1及上述STD2進行GPC測定而得到之結果，使用東曹公司製造之解析軟體GPC-8020 Model II(資料管理 Version 5.10)進行資料解析。 於使用上述解析軟體之資料解析中，首先，製作關於上述STD1及上述STD2之校準曲線(以橫軸為時間(分鐘)、以縱軸為重量平均分子量之對數之校準曲線)，以該等校準曲線為基準進行關於上述測定試樣之分子量之資料解析。關於上述測定試樣之分子量之資料解析係在得到關於在層析圖上最早檢測到之峰P1(最高分子量側之峰)之分子量分佈曲線之基礎上進行。藉由對關於峰P1之分子量分佈曲線進行資料解析，能夠得到關於峰P1之數平均分子量Mn及重量平均分子量Mw。 再者，於最早檢測到之峰P1之下降部分與繼峰P1之後檢測到之峰P2之上升部分觀察到重疊之情形時，以峰P1之上升開始部分為基點以沿水平方向延伸之方式畫基線，從上述基線向峰P1之下降部分與峰P2之上升部分之間產生之谷部分(最凹陷之部分)垂直畫線，對於由從峰P1之上升開始部分至上述谷部分為止、上述基線、及從上述基線向上述谷部分垂直畫出之線所分隔出之區域進行解析，藉此，可獲得關於峰P1之數平均分子量Mn及重量平均分子量Mw。For the results obtained by GPC measurement of the above-mentioned measurement sample, the above-mentioned STD1, and the above-mentioned STD2, analysis software GPC-8020 Model II (Data Management Version 5.10) manufactured by Tosoh was used for data analysis. In the data analysis using the above analysis software, firstly, create calibration curves for the above STD1 and the above STD2 (the horizontal axis is the time (minute), the vertical axis is the logarithm of the weight average molecular weight calibration curve), and these The curve is used as the basis for data analysis on the molecular weight of the above-mentioned measurement sample. The data analysis on the molecular weight of the above-mentioned measurement sample is performed on the basis of obtaining the molecular weight distribution curve on the peak P1 (the peak on the highest molecular weight side) detected earliest on the chromatogram. By analyzing the data on the molecular weight distribution curve of the peak P1, the number average molecular weight Mn and the weight average molecular weight Mw of the peak P1 can be obtained. Furthermore, when the falling part of the earliest detected peak P1 and the rising part of the peak P2 detected after the peak P1 overlap with each other, draw the horizontal direction with the beginning of the rising part of the peak P1 as the base point. The baseline is drawn vertically from the above-mentioned baseline to the valley part (the most depressed part) between the falling part of the peak P1 and the rising part of the peak P2. For the above-mentioned baseline from the rising part of the peak P1 to the above-mentioned valley part , And analyze the area separated by the line drawn vertically from the above-mentioned baseline to the above-mentioned valley part, by which the number average molecular weight Mn and the weight average molecular weight Mw of the peak P1 can be obtained.

於對硬化前之黏著劑層2進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之峰頂分子量之值較佳為33,000以下、更佳為25,000以下。藉由使在最高分子量側出現之峰之峰頂分子量之值在上述數值範圍內，能夠相對地減小黏著劑層2中所含之高分子成分之分子鏈附近之空間，因此，能夠進一步抑制上述光聚合起始劑從黏著劑層2向黏晶層3轉移。 此外，於對硬化前之黏著劑層2進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之峰頂分子量之值較佳為4,000以上、更佳為8,000以上。藉由使在最高分子量側出現之峰之峰頂分子量之值在上述數值範圍內，能夠相對地減少在黏著劑層2所含之高分子成分彼此之間產生之空間。藉此，能夠進一步抑制上述光聚合起始劑從黏著劑層2向黏晶層3轉移。In the molecular weight distribution curve obtained by GPC measurement of the adhesive layer 2 before curing, the peak top molecular weight of the peak appearing on the highest molecular weight side is preferably 33,000 or less, more preferably 25,000 or less. By making the value of the peak top molecular weight of the peak appearing on the highest molecular weight side within the above numerical range, the space near the molecular chain of the polymer component contained in the adhesive layer 2 can be relatively reduced. Therefore, the above can be further suppressed. The photopolymerization initiator is transferred from the adhesive layer 2 to the crystal bonding layer 3. In addition, in the molecular weight distribution curve obtained by GPC measurement of the adhesive layer 2 before curing, the peak top molecular weight of the peak appearing on the highest molecular weight side is preferably 4,000 or more, more preferably 8,000 or more. By making the value of the peak top molecular weight of the peak appearing on the highest molecular weight side within the above numerical range, the space generated between the polymer components contained in the adhesive layer 2 can be relatively reduced. Thereby, it is possible to further suppress the transfer of the photopolymerization initiator from the adhesive layer 2 to the crystal bonding layer 3.

硬化前之黏著劑層2較佳為包含未達32質量%之溶膠成分。 雖然認為上述光聚合起始劑會經由溶膠成分而從黏著劑層2向黏晶層3轉移，但是，藉由使溶膠成分為上述數值範圍，能夠進一步抑制上述光聚合起始劑從黏著劑層2向黏晶層3轉移。 又，上述硬化前之黏著劑層2較佳為包含23質量%以下之溶膠成分。 藉由設為溶膠成分之上述數值範圍，能夠進一步抑制上述光聚合起始劑從黏著劑層2向黏晶層3轉移，並且，於將黏晶層3及黏著劑層2之間剝離而以貼附有黏晶層3之狀態取出半導體晶片之拾取步驟中，能夠更容易地使黏晶層3從黏著劑層2剝離。 再者，於本說明書中，溶膠成分如在下述溶膠成分之質量比率之測定中所說明，係指從硬化前之黏著劑層2中取約0.2 g之樣品，使該樣品浸漬於約30 mL之甲苯中1週之後溶解於上述甲苯中之成分。 硬化前之黏著劑層2中之溶膠成分之質量比率可以如下方式求出。The adhesive layer 2 before curing preferably contains less than 32% by mass of the sol component. Although it is considered that the photopolymerization initiator is transferred from the adhesive layer 2 to the crystal bonding layer 3 via the sol component, by making the sol component within the above numerical range, it is possible to further suppress the photopolymerization initiator from moving from the adhesive layer 2 is transferred to the sticky crystal layer 3. In addition, the adhesive layer 2 before curing preferably contains 23% by mass or less of the sol component. By setting the above numerical range of the sol component, it is possible to further suppress the transfer of the photopolymerization initiator from the adhesive layer 2 to the adhesive layer 3, and to peel off between the adhesive layer 3 and the adhesive layer 2. In the pickup step of taking out the semiconductor wafer in the state where the die-bonding layer 3 is attached, the die-bonding layer 3 can be peeled from the adhesive layer 2 more easily. Furthermore, in this specification, the composition of the sol is described in the measurement of the mass ratio of the sol composition below, which means that about 0.2 g of a sample is taken from the adhesive layer 2 before hardening, and the sample is immersed in about 30 mL The components dissolved in the toluene mentioned above after 1 week in the toluene. The mass ratio of the sol component in the adhesive layer 2 before curing can be calculated as follows.

[溶膠成分之質量比率之測定] (1)從硬化前之黏著劑層2取約0.2 g之樣品。 (2)用網狀片材包裹上述樣品之後，於室溫下浸漬於約30 mL之甲苯中1週。 (3)從甲苯中取出網狀片材，將網狀片材中所含之甲苯不溶成分去除。 (4)使上述甲苯不溶成分在常壓下以130℃乾燥約2小時之後，稱量上述甲苯不溶成分。 (5)按照下述式(1)算出凝膠成分之質量比率，以凝膠分率之質量比率之算出值為基礎按照下述式(2)算出溶膠成分之質量比率。[Determination of the mass ratio of sol components] (1) Take a sample of about 0.2 g from the adhesive layer 2 before hardening. (2) After wrapping the above sample with a mesh sheet, immerse it in about 30 mL of toluene for 1 week at room temperature. (3) Take out the net-like sheet from the toluene, and remove the toluene-insoluble components contained in the net-like sheet. (4) After drying the toluene-insoluble component under normal pressure at 130°C for about 2 hours, the toluene-insoluble component is weighed. (5) Calculate the mass ratio of the gel component according to the following formula (1), and calculate the mass ratio of the sol component based on the calculated value of the mass ratio of the gel fraction according to the following formula (2).

[數1] 凝膠成分之質量比率(質量%)=[(甲苯不溶成分之稱量值)/所取樣品之質量]×100   ···(1)[Number 1] The mass ratio of gel components (mass%)=[(weighing value of toluene insoluble components)/mass of sample taken]×100 ···(1)

[數2] 溶膠成分之質量比率(質量%)=100－上述式(1)中求得之凝膠成分之質量比率   ···(2)[Number 2] The mass ratio of the sol component (mass%) = 100-the mass ratio of the gel component obtained in the above formula (1) ····(2)

黏晶層3相對於黏著劑層2之剝離力較佳為在黏著劑層2之硬化後未達0.18 N/20 mm、更佳為0.15 N/20 mm以下、進而較佳為0.07 N/20 mm以下。 藉由使黏著劑層2之硬化後之黏晶層3相對於黏著劑層2之剝離力為上述數值範圍，於上述拾取步驟中，能夠更容易地使黏晶層3從黏著劑層2剝離。 又，黏晶層3相對於黏著劑層2之剝離力較佳為在黏著劑層2之硬化後為0.01 N/20 mm以上。 又，藉由使黏著劑層2之硬化後之黏晶層3相對於黏著劑層2之剝離力為0.07 N/20 mm以下，於上述拾取步驟中，能夠特別容易地使黏晶層3從黏著劑層2剝離。 硬化之黏著劑層2可藉由自貼合有背襯帶之切晶黏晶膜20之切晶帶10照射規定強度之輻射線(例如150 J/cm2 之紫外線)來得到。 黏著劑層2之硬化後之黏晶層3相對於黏著劑層2之剝離力可藉由T型剝離試驗來測定。T型剝離試驗可以如下方式進行：對在黏晶層3之露出面貼合有背襯帶(例如日東電工公司製造之商品名「ELP BT315」)之切晶黏晶膜20照射規定強度之輻射線而使黏著劑層2硬化之後，從硬化之黏著劑層2切取寬50 mm×長120 mm之尺寸之黏著劑層2，作為測定用樣品，使用拉伸試驗器(例如商品名「TG-1kN」、MinebeaMitsumi Inc製造)在溫度25℃、拉伸速度300 mm/分鐘之條件下進行。The peeling force of the die bond layer 3 relative to the adhesive layer 2 is preferably less than 0.18 N/20 mm after the adhesive layer 2 is cured, more preferably 0.15 N/20 mm or less, and even more preferably 0.07 N/20 mm or less. By making the peeling force of the adhesive layer 3 after hardening of the adhesive layer 2 relative to the adhesive layer 2 within the above numerical range, in the above-mentioned pickup step, the adhesive layer 3 can be more easily peeled off from the adhesive layer 2 . In addition, the peeling force of the die-bonding layer 3 with respect to the adhesive layer 2 is preferably 0.01 N/20 mm or more after the adhesive layer 2 is cured. In addition, by making the peeling force of the adhesive layer 3 with respect to the adhesive layer 2 after the hardening of the adhesive layer 2 is 0.07 N/20 mm or less, in the above-mentioned picking step, it is particularly easy to remove the adhesive layer 3 from The adhesive layer 2 peels off. The hardened adhesive layer 2 can be obtained by irradiating a predetermined intensity of radiation (for example, 150 J/cm 2 of ultraviolet rays) from the dicing tape 10 of the dicing chip adhesive film 20 bonded with the backing tape. The peeling force of the adhesive layer 3 with respect to the adhesive layer 2 after hardening of the adhesive layer 2 can be measured by a T-type peel test. The T-type peeling test can be carried out as follows: the die-cut die-cut die film 20 with a backing tape (for example, the product name "ELP BT315" manufactured by Nitto Denko Corporation) attached to the exposed surface of the die-bond layer 3 is irradiated with radiation of a prescribed intensity After the adhesive layer 2 is hardened by threading, cut the adhesive layer 2 with a size of 50 mm in width x 120 mm in length from the hardened adhesive layer 2, and use a tensile tester (for example, a brand name "TG- 1kN", manufactured by MinebeaMitsumi Inc.) is performed under the conditions of a temperature of 25°C and a stretching speed of 300 mm/min.

黏晶層3相對於黏著劑層2之剝離力較佳為在黏著劑層2之硬化前為0.3 N/20 mm以上。 於硬化前之黏著劑層2中，藉由使黏晶層3相對於黏著劑層2之剝離力為上述數值範圍，能夠利用黏著劑層2適度地保持黏晶層3。藉此，能夠進一步抑制在黏晶層3單片化之後產生之晶片浮起。 又，黏晶層3相對於黏著劑層2之剝離力較佳為在黏著劑層2之硬化前為5.0 N/20 mm以下。 黏著劑層2之硬化前之黏晶層3相對於黏著劑層2之剝離力可藉由T型剝離試驗來測定。T型剝離試驗可以如下方式進行：從在黏晶層3之露出面貼合有背襯帶(例如日東電工公司製造之商品名「ELP BT315」)之切晶黏晶膜20切取寬20 mm×長120 mm之尺寸之膜，作為測定用樣品，使用拉伸試驗器(例如商品名「TG-1kN」、MinebeaMitsumi Inc製造)，於溫度25℃、拉伸速度300 mm/分鐘之條件下進行。The peeling force of the die-bonding layer 3 with respect to the adhesive layer 2 is preferably 0.3 N/20 mm or more before the adhesive layer 2 is hardened. In the adhesive layer 2 before hardening, by making the peeling force of the adhesive layer 3 with respect to the adhesive layer 2 within the above-mentioned numerical range, the adhesive layer 2 can appropriately hold the adhesive layer 3. Thereby, it is possible to further suppress the floating of the wafer generated after the die-bonding layer 3 is singulated. In addition, the peeling force of the die-bonding layer 3 with respect to the adhesive layer 2 is preferably 5.0 N/20 mm or less before the adhesive layer 2 is cured. The peeling force of the adhesive layer 3 before the hardening of the adhesive layer 2 with respect to the adhesive layer 2 can be measured by a T-type peel test. The T-type peel test can be carried out in the following way: cut the die-cut die-bonding film 20 with a backing tape (for example, the trade name "ELP BT315" manufactured by Nitto Denko) on the exposed surface of the die-bonding layer 3, and cut a width of 20 mm× A film with a size of 120 mm in length is used as a sample for measurement using a tensile tester (for example, trade name "TG-1kN", manufactured by Minebea Mitsumi Inc.) at a temperature of 25°C and a tensile speed of 300 mm/min.

黏著劑層2亦可包含外部交聯劑。作為外部交聯劑，只要能夠與基礎聚合物(例如丙烯酸系聚合物)反應而形成交聯結構便可使用任意之物質。作為此種外部交聯劑，可列舉出例如多異氰酸酯化合物、環氧化合物、多元醇化合物、氮丙啶化合物、及三聚氰胺系交聯劑等。 於黏著劑層2包含外部交聯劑之情形時，黏著劑層2較佳為包含0.1質量份以上且3質量份以下之上述外部交聯劑。The adhesive layer 2 may also include an external crosslinking agent. As the external crosslinking agent, any substance can be used as long as it can react with the base polymer (for example, an acrylic polymer) to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents. When the adhesive layer 2 contains an external crosslinking agent, the adhesive layer 2 preferably contains 0.1 parts by mass or more and 3 parts by mass or less of the above-mentioned external crosslinking agent.

黏著劑層2在上述成分之基礎上，還可包含黏著賦予劑(tackifier)、抗氧化劑、交聯促進劑、防老劑、顏料、或染料等著色劑等。In addition to the above-mentioned components, the adhesive layer 2 may also include coloring agents such as tackifiers, antioxidants, crosslinking accelerators, antioxidants, pigments, or dyes.

黏著劑層2之厚度較佳為1 μm以上且50 μm以下、更佳為2 μm以上且30 μm以下、進而較佳為5 μm以上且25 μm以下。 黏著劑層2之厚度例如可以藉由使用度盤規(PEACOCK公司製造、型號R-205)測定隨機選擇之任意5個點之厚度並將該等厚度進行算術平均來求出。The thickness of the adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 30 μm or less, and still more preferably 5 μm or more and 25 μm or less. The thickness of the adhesive layer 2 can be obtained by, for example, measuring the thickness of any five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and arithmetically averaging these thicknesses.

基材層1支持黏著劑層2。基材層1使用樹脂膜來製作。作為樹脂膜所包含之樹脂，可列舉聚烯烴、聚酯、聚胺基甲酸酯、聚碳酸酯、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚氯乙烯、聚偏二氯乙烯、聚苯硫醚、氟樹脂、纖維素系樹脂及聚矽氧樹脂等。The base layer 1 supports the adhesive layer 2. The base material layer 1 is produced using a resin film. Examples of the resin contained in the resin film include polyolefin, polyester, polyurethane, polycarbonate, polyether ether ketone, polyimide, polyether imide, polyamide, and wholly aromatic Polyamide, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, fluororesin, cellulose resin, polysiloxane resin, etc.

作為聚烯烴，可列舉出例如α-烯烴之均聚物、兩種以上之α-烯烴之共聚物、嵌段聚丙烯、無規聚丙烯、1種或2種以上之α-烯烴與其他乙烯基單體之共聚物等。Examples of polyolefins include homopolymers of α-olefins, copolymers of two or more kinds of α-olefins, block polypropylene, random polypropylene, one or more kinds of α-olefins, and other ethylene Copolymers of monomers, etc.

作為α-烯烴之均聚物，較佳為碳原子數2以上且12以下之α-烯烴之均聚物。作為此種均聚物，可列舉乙烯、丙烯、1-丁烯、4-甲基-1-戊烯等。The homopolymer of α-olefin is preferably a homopolymer of α-olefin having 2 or more and 12 or less carbon atoms. As such a homopolymer, ethylene, propylene, 1-butene, 4-methyl-1-pentene, etc. are mentioned.

作為兩種以上之α-烯烴之共聚物，可列舉乙烯/丙烯共聚物、乙烯/1-丁烯共聚物、乙烯/丙烯/1-丁烯共聚物、乙烯/碳原子數5以上且12以下之α-烯烴之共聚物、丙烯/乙烯共聚物、丙烯/1-丁烯共聚物、丙烯/碳原子數5以上且12以下之α-烯烴之共聚物等。Examples of copolymers of two or more α-olefins include ethylene/propylene copolymers, ethylene/1-butene copolymers, ethylene/propylene/1-butene copolymers, and ethylene/carbon atoms of 5 to 12 Α-olefin copolymer, propylene/ethylene copolymer, propylene/1-butene copolymer, propylene/α-olefin copolymer with 5 to 12 carbon atoms, etc.

作為1種或2種以上之α-烯烴與其他乙烯基單體之共聚物，可列舉乙烯-乙酸乙烯酯共聚物(EVA)等。Examples of copolymers of one or more types of α-olefins and other vinyl monomers include ethylene-vinyl acetate copolymer (EVA) and the like.

聚烯烴可為被稱為α-烯烴系熱塑性彈性體之物質。作為α-烯烴系熱塑性彈性體，可列舉將丙烯-乙烯共聚物與丙烯均聚物組合而得之物質、或者丙烯-乙烯-碳原子數4以上之α-烯烴三元共聚物。 作為α-烯烴系熱塑性彈性體之市售品，可列舉出例如作為丙烯系彈性體樹脂之Vistamaxx 3980(ExxonMobil Chemical company製)。The polyolefin may be what is called an α-olefin-based thermoplastic elastomer. Examples of the α-olefin-based thermoplastic elastomer include a combination of a propylene-ethylene copolymer and a propylene homopolymer, or a propylene-ethylene-α-olefin terpolymer having 4 or more carbon atoms. As a commercially available product of the α-olefin-based thermoplastic elastomer, for example, Vistamaxx 3980 (manufactured by ExxonMobil Chemical Company) which is a propylene-based elastomer resin can be cited.

樹脂膜可包含1種上述樹脂，亦可包含兩種以上之上述樹脂。 再者，黏著劑層2包含後述紫外線硬化黏著劑時，製作基材層1之樹脂膜較佳為以具有紫外線透射性之方式來構成。The resin film may contain one kind of the above-mentioned resin, or two or more kinds of the above-mentioned resin. Furthermore, when the adhesive layer 2 contains an ultraviolet-curing adhesive described later, the resin film for making the base layer 1 is preferably formed in a manner having ultraviolet light transmittance.

基材層1可為單層結構，亦可為積層結構。基材層1可藉由無拉伸成形來獲得，亦可以藉由拉伸成形來獲得，較佳為藉由拉伸成形來獲得。基材層1為積層結構時，基材層1較佳為具有包含彈性體之層(以下稱為彈性體層)及包含非彈性體之層(以下稱為非彈性體層)。 藉由使基材層1具有彈性體層及非彈性體層，能夠使彈性體層作為緩和拉伸應力之應力緩和層而發揮功能。即，由於能夠使基材層1中產生之拉伸應力相對較小，因此，能夠使基材層1具有適度之硬度且相對較容易拉伸。 藉此，能夠提高由半導體晶圓切割成複數個半導體晶片之切斷性。 此外，於擴展步驟中之切斷時，能夠抑制基材層1破裂而損壞。 再者，本說明書中，彈性體層係指在室溫下之拉伸儲存彈性模數比非彈性體層低之低彈性模數層。作為彈性體層，可列舉在室溫下之拉伸儲存彈性模數為10 MPa以上且200 MPa以下者，作為非彈性體層，可列舉在室溫下之拉伸儲存彈性模數為200 MPa以上且500 MPa以下者。The base material layer 1 may have a single-layer structure or a multilayer structure. The base material layer 1 may be obtained by non-stretch forming, or may be obtained by stretch forming, and is preferably obtained by stretch forming. When the base material layer 1 has a laminated structure, the base material layer 1 preferably has a layer containing an elastomer (hereinafter referred to as an elastomer layer) and a layer containing a non-elastomeric body (hereinafter referred to as a non-elastomeric layer). By providing the base layer 1 with an elastomer layer and a non-elastomeric layer, the elastomer layer can function as a stress relaxation layer that relaxes tensile stress. That is, since the tensile stress generated in the base layer 1 can be made relatively small, the base layer 1 can be made to have moderate hardness and be relatively easy to stretch. Thereby, it is possible to improve the cutting performance of dicing a semiconductor wafer into a plurality of semiconductor wafers. In addition, at the time of cutting in the expanding step, it is possible to prevent the base layer 1 from being broken and damaged. Furthermore, in this specification, the elastomer layer refers to a low elastic modulus layer that has a tensile storage elastic modulus at room temperature lower than that of the non-elastomeric layer. Examples of the elastomer layer include those having a tensile storage modulus of 10 MPa or more and 200 MPa or less at room temperature, and examples of the non-elastomeric layer include those having a tensile storage elastic modulus of 200 MPa or more at room temperature and Those below 500 MPa.

彈性體層可包含1種彈性體，亦可包含2種以上之彈性體，較佳為包含α-烯烴系熱塑性彈性體、EVA(乙烯-乙酸乙烯酯共聚物)。 非彈性體層可包含1種非彈性體，亦可包含2種以上之非彈性體，較佳為包含後述之茂金屬PP。 基材層1具有彈性體層及非彈性體層時，基材層1較佳為形成為以彈性體層作為中心層且在該中心層之彼此相對之兩面具有非彈性體層之三層結構(非彈性體層/彈性體層/非彈性體層)。The elastomer layer may include one type of elastomer or two or more types of elastomers, and preferably includes an α-olefin-based thermoplastic elastomer and EVA (ethylene-vinyl acetate copolymer). The non-elastomeric layer may include one type of non-elastomeric body, or two or more types of non-elastomeric body, and preferably contains the metallocene PP described later. When the base layer 1 has an elastomer layer and a non-elastomeric layer, the base layer 1 is preferably formed as a three-layer structure (non-elastomeric layer) with the elastomer layer as the central layer and non-elastomeric layers on opposite sides of the central layer. /Elastomer layer/Non-elastomeric layer).

又，如上所述，於切口維持步驟中，由於在室溫(例如23℃)下將熱風(例如100~130℃)吹向維持擴展狀態之上述切晶黏晶膜而使上述切晶黏晶膜發生熱收縮，然後進行冷卻固化，因此，基材層1之最外層較佳為包含具有與吹到切晶帶之熱風溫度相近之熔點之樹脂。藉此，能夠使藉由吹送熱風而熔融之最外層更迅速地固化。 其結果，於切口維持步驟中能夠更充分地維持切口。In addition, as described above, in the incision maintaining step, hot air (e.g., 100~130°C) is blown at room temperature (e.g., 23°C) to the die-cutting die film that is maintained in an expanded state, so that the die-cutting die The film undergoes thermal shrinkage and then cools and solidifies. Therefore, the outermost layer of the substrate layer 1 preferably contains a resin having a melting point close to the temperature of the hot air blown to the dicing belt. Thereby, the outermost layer melted by blowing hot air can be solidified more quickly. As a result, the incision can be maintained more sufficiently in the incision maintaining step.

基材層1係彈性體層與非彈性體層之積層結構，彈性體層包含α-烯烴系熱塑性彈性體且非彈性體層包含後述之茂金屬PP等聚烯烴之情形時，彈性體層較佳為包含相對於形成該彈性體層之彈性體總質量為50質量%以上且100質量%以下之α-烯烴系熱塑性彈性體，更佳為包含70質量%以上且100質量%以下，進而較佳為包含80質量%以上且100質量%以下，特佳為包含90質量%以上且100質量%以下，最佳為包含95質量%以上且100質量%以下。藉由以上述範圍包含α-烯烴系熱塑性彈性體，彈性體層與非彈性體層之親和性變高，因此，能夠比較容易地將基材層1擠出成形。又，能夠使彈性體層作為應力緩和層而發揮作用，因此，能夠高效率地切斷貼附於切晶帶之半導體晶圓。The base layer 1 is a laminated structure of an elastomer layer and a non-elastomeric layer. When the elastomer layer contains an α-olefin-based thermoplastic elastomer and the non-elastomeric layer contains polyolefins such as metallocene PP described later, the elastomer layer preferably contains relative to The total mass of the elastomer forming the elastomer layer is 50% by mass or more and 100% by mass or less of α-olefin-based thermoplastic elastomer, more preferably 70% by mass or more and 100% by mass or less, and more preferably 80% by mass More than and 100% by mass or less, particularly preferably 90% by mass or more and 100% by mass or less, and most preferably 95% by mass or more and 100% by mass or less. By including the α-olefin-based thermoplastic elastomer in the above-mentioned range, the affinity between the elastomer layer and the non-elastomeric layer becomes high, and therefore, the base material layer 1 can be extrusion-molded relatively easily. In addition, the elastomer layer can function as a stress relaxation layer, and therefore, the semiconductor wafer attached to the dicing tape can be cut efficiently.

基材層1為彈性體層與非彈性體層之積層結構時，基材層1較佳為藉由將彈性體與非彈性體進行共擠出而製成彈性體層與非彈性體層之積層結構之共擠出成形來獲得。作為共擠出成形，可採用在膜、片等之製造中通常進行之任意且適當之共擠出成形。於共擠出成形之中，從能夠高效率且便宜地獲得基材層1之觀點出發，較佳為採用吹脹法、共擠出T模法。When the base material layer 1 has a laminated structure of an elastomer layer and a non-elastomeric layer, the base material layer 1 is preferably made by co-extruding an elastomer and a non-elastomeric body to form a co-extruded structure of an elastomer layer and a non-elastomeric layer. Obtained by extrusion molding. As the co-extrusion molding, any and appropriate co-extrusion molding that is usually performed in the production of films, sheets, etc. can be adopted. In the co-extrusion molding, from the viewpoint that the base material layer 1 can be obtained efficiently and inexpensively, the inflation method or the co-extrusion T-die method is preferably used.

藉由共擠出成形來獲得形成積層結構之基材層1時，上述彈性體層與上述非彈性體層經加熱而在熔融狀態下接觸，因此，較佳為上述彈性體與上述非彈性體之熔點差小。藉由使熔點差小，從而抑制成為低熔點之上述彈性體或上述非彈性體中之任一者被過度加熱，因此，能夠抑制成為低熔點之上述彈性體或上述非彈性體中之任一者因熱劣化而生成副產物。又，亦能夠抑制因成為低熔點之上述彈性體或上述非彈性體中之任一者之黏度過度降低而導致上述彈性體層與上述非彈性體層之間發生積層不良。上述彈性體與上述非彈性體之熔點差較佳為0℃以上且70℃以下、更佳為0℃以上且55℃以下。 上述彈性體及上述非彈性體之熔點可利用示差掃描熱量(DSC)分析進行測定。例如，可藉由使用示差掃描熱量計裝置(TA INSTRUMENTS公司製、型號：DSC Q2000)，於氮氣氣流下以5℃/分鐘之升溫速度升溫至200℃，並求出吸熱峰之峰值溫度來測定。When the base material layer 1 forming the laminated structure is obtained by co-extrusion, the elastomer layer and the non-elastomeric layer are heated to contact in a molten state. Therefore, the melting point of the elastomer and the non-elastomeric is preferred The difference is small. By making the difference in melting point small, it is possible to prevent any one of the above-mentioned elastomer or the above-mentioned non-elastomeric body from becoming a low melting point from being overheated. Therefore, it is possible to prevent any one of the above-mentioned elastomer or the above-mentioned non-elastomeric body from becoming a low melting point. Those who generate by-products due to thermal degradation. In addition, it is also possible to suppress the occurrence of build-up failure between the elastomer layer and the non-elastomeric layer due to excessive decrease in the viscosity of either the elastomer or the non-elastomeric body, which has a low melting point. The difference in melting point between the elastomer and the non-elastomeric body is preferably 0°C or more and 70°C or less, more preferably 0°C or more and 55°C or less. The melting point of the above-mentioned elastomer and the above-mentioned non-elastomeric body can be measured by differential scanning calorimetry (DSC) analysis. For example, it can be measured by using a differential scanning calorimeter device (manufactured by TA INSTRUMENTS, model: DSC Q2000), heating up to 200°C at a heating rate of 5°C/min under nitrogen gas flow, and obtaining the peak temperature of the endothermic peak.

基材層1之厚度較佳為55 μm以上且195 μm以下、更佳為55 μm以上且190 μm以下、進而較佳為55 μm以上且170 μm以下、最佳為60 μm以上且160 μm以下。藉由使基材層1之厚度為上述範圍，能夠高效率地製造切晶帶，且能夠高效率地切斷貼附於切晶帶之半導體晶圓。 基材層1之厚度可藉由例如使用度盤規(PEACOCK公司製、型號：R-205)，測定隨機選擇之任意5個點之厚度，並對該等厚度進行算術平均來求出。The thickness of the substrate layer 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, still more preferably 55 μm or more and 170 μm or less, most preferably 60 μm or more and 160 μm or less . By setting the thickness of the base material layer 1 within the above-mentioned range, the dicing tape can be manufactured efficiently, and the semiconductor wafer attached to the dicing tape can be cut efficiently. The thickness of the base material layer 1 can be obtained by, for example, using a dial gauge (manufactured by PEACOCK, model: R-205), measuring the thickness of any five randomly selected points, and arithmetically averaging these thicknesses.

於將彈性體層及非彈性體層積層而成之基材層1中，非彈性體層之厚度相對於彈性體層之厚度之比較佳為1/25以上且1/3以下，更佳為1/25以上且1/3.5以下，進而較佳為1/25以上且1/4以下，特佳為1/22以上且1/4以下，最佳為1/20以上且1/4以下。藉由將非彈性體層之厚度相對於彈性體層之厚度之比設為上述範圍，能夠效率更良好地切斷貼附於切晶帶之半導體晶圓。In the base material layer 1 formed by laminating an elastomer layer and a non-elastomeric layer, the thickness of the non-elastomeric layer relative to the thickness of the elastomer layer is preferably 1/25 or more and 1/3 or less, more preferably 1/25 or more And 1/3.5 or less, more preferably 1/25 or more and 1/4 or less, particularly preferably 1/22 or more and 1/4 or less, most preferably 1/20 or more and 1/4 or less. By setting the ratio of the thickness of the non-elastomeric layer to the thickness of the elastomeric layer in the above-mentioned range, the semiconductor wafer attached to the dicing tape can be cut more efficiently.

彈性體層可為單層(1層)結構，亦可為積層結構。彈性體層較佳為1層~5層之結構，更佳為1層~3層之結構，進而較佳為1層~2層之結構，最佳為1層結構。於彈性體層為積層結構之情形時，既可為全部層包含相同之彈性體，亦可為至少2層包含不同之彈性體。The elastomer layer may have a single-layer (one-layer) structure or a multilayer structure. The elastomer layer is preferably a structure of 1 to 5 layers, more preferably a structure of 1 to 3 layers, more preferably a structure of 1 to 2 layers, and most preferably a structure of 1 layer. When the elastomer layer has a laminated structure, all layers may include the same elastomer, or at least two layers may include different elastomers.

非彈性體層可為單層(1層)結構，亦可為積層結構。非彈性體層較佳為1層~5層之結構，更佳為1層~3層之結構，進而較佳為1層~2層之結構，最佳為1層結構。於非彈性體層為積層結構之情形時，既可為全部之層包含相同之非彈性體，亦可為至少2層包含不同之非彈性體。The non-elastomeric layer may have a single-layer (one-layer) structure or a multilayer structure. The non-elastomeric layer is preferably a 1-layer to 5-layer structure, more preferably a 1-layer to 3-layer structure, further preferably a 1-layer to 2-layer structure, and most preferably a 1-layer structure. When the non-elastomeric layer has a laminated structure, all layers may contain the same non-elastomeric body, or at least two layers may contain different non-elastomeric bodies.

非彈性體層較佳為包含作為利用茂金屬觸媒得到之聚合產物之聚丙烯樹脂(以下稱為茂金屬PP)來作為非彈性體。作為茂金屬PP，可列舉作為茂金屬觸媒之聚合產物之丙烯/α-烯烴共聚物。藉由使非彈性體層包含茂金屬PP，從而能夠效率良好地製造切晶帶，並且能夠效率良好地切斷貼附於切晶帶之半導體晶圓。 再者，作為市售之茂金屬PP，可列舉WINTEC WFX4M(日本聚丙烯公司製)。The non-elastomeric layer preferably contains as a non-elastomeric polypropylene resin (hereinafter referred to as metallocene PP) as a polymerization product obtained by using a metallocene catalyst. As the metallocene PP, a propylene/α-olefin copolymer which is a polymerization product of a metallocene catalyst can be cited. By including the metallocene PP in the non-elastomeric layer, the dicing tape can be efficiently manufactured, and the semiconductor wafer attached to the dicing tape can be efficiently cut. In addition, as a commercially available metallocene PP, WINTEC WFX4M (manufactured by Nippon Polypropylene Co., Ltd.) can be cited.

此處，茂金屬觸媒係包含週期表第4族之過渡金屬化合物(所謂之茂金屬化合物)、以及可與茂金屬化合物反應而將該茂金屬化合物活化為穩定之離子態之助觸媒之觸媒，上述週期表第4族之過渡金屬化合物包含具有環戊二烯基骨架之配體，上述茂金屬觸媒根據需要而包含有機鋁化合物。茂金屬化合物為能夠進行丙烯之立體規則性聚合之交聯型茂金屬化合物。Here, the metallocene catalyst includes a transition metal compound of Group 4 of the Periodic Table (the so-called metallocene compound) and a co-catalyst that can react with the metallocene compound to activate the metallocene compound into a stable ionic state. As the catalyst, the transition metal compound of Group 4 of the periodic table includes a ligand having a cyclopentadienyl skeleton, and the metallocene catalyst includes an organoaluminum compound as necessary. The metallocene compound is a cross-linked metallocene compound capable of performing stereoregular polymerization of propylene.

於上述作為茂金屬觸媒之聚合產物之丙烯/α-烯烴共聚物中，較佳為作為茂金屬觸媒之聚合產物之丙烯/α-烯烴無規共聚物，於上述作為茂金屬觸媒之聚合產物之丙烯/α-烯烴無規共聚物中，較佳為選自作為茂金屬觸媒之聚合產物之丙烯/碳數2之α-烯烴無規共聚物、作為茂金屬觸媒之聚合產物之丙烯/碳數4之α-烯烴無規共聚物、以及作為茂金屬觸媒之聚合產物之丙烯/碳數5之α-烯烴無規共聚物中之共聚物，該等中，最佳為作為茂金屬觸媒之聚合產物之丙烯/乙烯無規共聚物。Among the above-mentioned propylene/α-olefin copolymers as the polymerization product of the metallocene catalyst, the propylene/α-olefin random copolymer as the polymerization product of the metallocene catalyst is preferred, and the above-mentioned as the metallocene catalyst Among the propylene/α-olefin random copolymers of the polymerization product, it is preferably selected from propylene/α-olefin random copolymers of carbon number 2 as the metallocene catalyst polymerization product, and the polymerization product as the metallocene catalyst The propylene/carbon number 4 α-olefin random copolymer, and the propylene/carbon number 5 α-olefin random copolymer as the polymerization product of the metallocene catalyst. Among them, the best is Propylene/ethylene random copolymer as the polymerization product of metallocene catalyst.

對於上述作為茂金屬觸媒之聚合產物之丙烯/α-烯烴無規共聚物，從與上述彈性體層之共擠出成膜性及貼附於切晶帶之半導體晶圓之切斷性之觀點出發，較佳為熔點為80℃以上且140℃以下、特別是100℃以上且130℃以下者。 上述作為茂金屬觸媒之聚合產物之丙烯/α-烯烴無規共聚物之熔點可利用上述方法來測定。Regarding the above-mentioned propylene/α-olefin random copolymer as the polymerization product of the metallocene catalyst, from the viewpoints of the co-extrusion film-forming property with the above-mentioned elastomer layer and the cutting property of the semiconductor wafer attached to the dicing tape From the point of view, those having a melting point of 80°C or higher and 140°C or lower, particularly 100°C or higher and 130°C or lower are preferred. The melting point of the above-mentioned propylene/α-olefin random copolymer as the polymerization product of the metallocene catalyst can be determined by the above-mentioned method.

此處，若將上述彈性體層配置在基材層1之最外層，則在將基材層1製成卷狀體時，被配置在最外層之上述彈性體層彼此容易黏連(容易黏在一起)。因此，變得難以將基材層1從卷狀體退卷。與此相對地，上述積層結構之基材層1之較佳態樣為非彈性體層/彈性體層/非彈性體層，即非彈性體層被配置在最外層，因此此種態樣之基材層1之耐黏連性變得優異。藉此，能夠抑制因黏連而導致使用切晶帶10之半導體裝置之製造產生延遲。Here, if the above-mentioned elastomer layer is arranged on the outermost layer of the base material layer 1, when the base material layer 1 is made into a roll, the above-mentioned elastomer layers arranged on the outermost layer tend to adhere to each other (easy to stick together). ). Therefore, it becomes difficult to unwind the base material layer 1 from the roll. In contrast, the preferred aspect of the substrate layer 1 of the above-mentioned laminated structure is a non-elastomeric layer/elastomeric layer/non-elastomeric layer, that is, the non-elastomeric layer is arranged on the outermost layer, so the substrate layer 1 of this aspect The blocking resistance becomes excellent. Thereby, it is possible to suppress the delay in the manufacture of the semiconductor device using the dicing tape 10 due to adhesion.

上述非彈性體層較佳為包含具有100℃以上且130℃以下之熔點、並且分子量分散度(重量平均分子量/數平均分子量)為5以下之樹脂。作為此種樹脂，可列舉茂金屬PP。 藉由使上述非彈性體層包含如上所述之樹脂，從而能夠在切口維持步驟中使非彈性體層更迅速地冷卻固化。因此，能夠更充分地抑制在使切晶帶熱收縮後基材層1發生收縮。 藉此，於切口維持步驟中，能夠更充分地維持切口。The non-elastomeric layer preferably contains a resin having a melting point of 100°C or more and 130°C or less and a molecular weight dispersion (weight average molecular weight/number average molecular weight) of 5 or less. As such resin, metallocene PP can be mentioned. By making the non-elastomeric layer contain the resin as described above, the non-elastomeric layer can be cooled and solidified more quickly in the incision maintaining step. Therefore, it is possible to more sufficiently suppress the shrinkage of the base material layer 1 after thermally shrinking the dicing tape. Thereby, in the incision maintaining step, the incision can be maintained more fully.

黏晶層3較佳為具有熱硬化性。藉由使黏晶層3包含熱硬化性樹脂及具有熱硬化性官能基之熱塑性樹脂中之至少一者，從而可對黏晶層3賦予熱硬化性。The die-bonding layer 3 preferably has thermosetting properties. By making the die-bonding layer 3 contain at least one of a thermosetting resin and a thermoplastic resin having a thermosetting functional group, the die-bonding layer 3 can be given thermosetting properties.

當黏晶層3包含熱硬化性樹脂時，作為此種熱硬化性樹脂，可列舉出例如環氧樹脂、酚樹脂、胺基樹脂、不飽和聚酯樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、及熱硬化性聚醯亞胺樹脂等。該等中，較佳為使用環氧樹脂。When the die-bonding layer 3 contains a thermosetting resin, examples of such thermosetting resins include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, and poly Silicone resin, and thermosetting polyimide resin, etc. Among them, epoxy resin is preferably used.

作為環氧樹脂，可列舉出例如雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、芴型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型、乙內醯脲型、異氰脲酸三縮水甘油酯型、及縮水甘油胺型之環氧樹脂。Examples of epoxy resins include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene Type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, hydantoin type, triglycidyl isocyanurate type, and glycidylamine type Epoxy resin.

對於作為環氧樹脂之硬化劑之酚樹脂，可列舉出例如酚醛清漆型酚樹脂、可溶酚醛型酚樹脂、及聚對羥基苯乙烯等聚羥基苯乙烯。Examples of phenol resins used as hardeners for epoxy resins include novolak-type phenol resins, resol-type phenol resins, and polyhydroxystyrenes such as poly(p-hydroxystyrene).

黏晶層3包含具有熱硬化性官能基之熱塑性樹脂時，作為此種熱塑性樹脂，可列舉出例如含有熱硬化性官能基之丙烯酸類樹脂。作為含有熱硬化性官能基之丙烯酸類樹脂中之丙烯酸類樹脂，可列舉包含來自(甲基)丙烯酸酯之單體單元者。 對於具有熱硬化性官能基之熱硬化性樹脂而言，可根據熱硬化性官能基之種類來選擇硬化劑。When the die-bonding layer 3 contains a thermoplastic resin having a thermosetting functional group, examples of such a thermoplastic resin include an acrylic resin containing a thermosetting functional group. As an acrylic resin in the acrylic resin containing a thermosetting functional group, the thing containing the monomer unit derived from (meth)acrylate is mentioned. For thermosetting resins having thermosetting functional groups, a curing agent can be selected according to the type of thermosetting functional group.

從使樹脂成分之硬化反應充分進行、或者提高硬化反應速度之觀點出發，黏晶層3亦可含有熱硬化觸媒(硬化促進劑)。作為熱硬化觸媒，可列舉出例如咪唑系化合物、三苯基膦系化合物、胺系化合物、及三鹵代硼烷系化合物。From the viewpoint of making the hardening reaction of the resin component proceed sufficiently or increasing the hardening reaction speed, the die-bonding layer 3 may contain a thermosetting catalyst (hardening accelerator). Examples of the thermosetting catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihaloborane-based compounds.

黏晶層3可包含熱塑性樹脂。熱塑性樹脂作為黏合劑起作用。作為熱塑性樹脂，可列舉出例如天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、聚醯胺6、聚醯胺6,6等聚醯胺樹脂、苯氧基樹脂、丙烯酸類樹脂、PET、PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂等。上述熱塑性樹脂可僅使用一種，亦可將兩種以上組合使用。作為上述熱塑性樹脂，從離子性雜質少且耐熱性高從而容易確保基於黏晶層之連接可靠性之觀點出發，較佳為丙烯酸類樹脂。The die bonding layer 3 may include a thermoplastic resin. The thermoplastic resin acts as a binder. Examples of thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutadiene. Resin, polycarbonate resin, thermoplastic polyimide resin, polyamide 6, polyamide 6, 6 and other polyamide resins, phenoxy resin, acrylic resin, PET, PBT and other saturated polyester resins, poly Amide resin, fluororesin, etc. Only one type of the above-mentioned thermoplastic resin may be used, or two or more types may be used in combination. As the above-mentioned thermoplastic resin, an acrylic resin is preferred from the standpoint of having less ionic impurities and high heat resistance so as to easily ensure the connection reliability by the die-bonding layer.

上述丙烯酸類樹脂較佳為包含來自(甲基)丙烯酸酯之單體單元來作為以質量比率計最多之單體單元之聚合物。作為(甲基)丙烯酸酯，可列舉出例如(甲基)丙烯酸烷基酯、(甲基)丙烯酸環烷基酯、及(甲基)丙烯酸芳基酯等。上述丙烯酸類樹脂可包含來自能夠與(甲基)丙烯酸酯共聚之其他成分之單體單元。作為上述其他成分，可列舉出例如含羧基單體、酸酐單體、含羥基單體、含縮水甘油基單體、含磺酸基單體、含磷酸基單體、丙烯醯胺、丙烯腈等含官能基單體、各種多官能性單體等。從在黏晶層中實現高凝聚力之觀點出發，上述丙烯酸類樹脂較佳為(甲基)丙烯酸酯(特別是烷基之碳數為4以下之(甲基)丙烯酸烷基酯)與含羧基單體、含氮原子單體、多官能性單體(特別是多縮水甘油基系多官能單體)之共聚物，更佳為丙烯酸乙酯與丙烯酸丁酯、丙烯酸、丙烯腈、聚(甲基)丙烯酸縮水甘油酯之共聚物。It is preferable that the said acrylic resin contains the monomer unit derived from (meth)acrylic acid ester as a polymer which has the most monomer unit by mass ratio. Examples of (meth)acrylates include alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates. The above-mentioned acrylic resin may contain monomer units derived from other components that can be copolymerized with (meth)acrylate. Examples of the above-mentioned other components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile, etc. Functional monomers, various multifunctional monomers, etc. From the viewpoint of achieving high cohesive force in the sticky layer, the above-mentioned acrylic resin is preferably (meth)acrylate (especially alkyl (meth)acrylate with an alkyl group of 4 or less carbon atoms) and a carboxyl group Copolymers of monomers, nitrogen-containing monomers, polyfunctional monomers (especially polyglycidyl-based polyfunctional monomers), more preferably ethyl acrylate and butyl acrylate, acrylic acid, acrylonitrile, poly(methyl) Base) Copolymer of glycidyl acrylate.

根據需要，黏晶層3可含有一種或兩種以上之其他成分。作為其他成分，可列舉出例如阻燃劑、矽烷偶合劑、及離子捕捉劑。According to requirements, the die-bonding layer 3 may contain one or more than two other components. Examples of other components include flame retardants, silane coupling agents, and ion scavengers.

黏晶層3之厚度沒有特別限定，例如為1 μm以上且200 μm以下。該厚度可為3 μm以上且150 μm以下，亦可為5 μm以上且100 μm以下。The thickness of the die-bonding layer 3 is not particularly limited, and is, for example, 1 μm or more and 200 μm or less. The thickness may be 3 μm or more and 150 μm or less, or 5 μm or more and 100 μm or less.

本實施方式之切晶黏晶膜20例如可作為用於製造半導體積體電路之輔助用具來使用。以下對使用切晶黏晶膜20之具體例進行說明。 以下，對使用基材層1為一層之切晶黏晶膜20之例子進行說明。The diced die bonding film 20 of this embodiment can be used as an auxiliary tool for manufacturing semiconductor integrated circuits, for example. Hereinafter, a specific example of using the diced die sticking film 20 will be described. Hereinafter, an example of using the dicing die attach film 20 with the base layer 1 as one layer will be described.

製造半導體積體電路之方法具有下述步驟：於要藉由切斷處理而將半導體晶圓加工成晶片(Die)之半導體晶圓上形成槽之半切割步驟；對半切割步驟後之半導體晶圓進行磨削而減薄厚度之背面研磨步驟；將背面研磨步驟後之半導體晶圓之一面(例如與電路面相反一側之面)貼附於黏晶層3，將半導體晶圓固定於切晶帶10之安裝步驟；擴大經半切割加工之半導體晶片彼此之間隔之擴展步驟；維持半導體晶片彼此之間隔之切口維持步驟；將黏晶層3與黏著劑層2之間剝離，於貼附有黏晶層3之狀態下取出半導體晶片(Die)之拾取步驟；以及使貼附有黏晶層3之狀態之半導體晶片(Die)接著於被接著體之黏晶步驟。實施該等步驟時，本實施方式之切晶帶(切晶黏晶膜)被用作製造輔助用具。The method of manufacturing a semiconductor integrated circuit has the following steps: a half-cutting step of forming grooves on the semiconductor wafer to be processed into a die by a cutting process; the semiconductor wafer after the half-cutting step Circular grinding to reduce the thickness of the back grinding step; after the back grinding step, one side of the semiconductor wafer (for example, the side opposite to the circuit surface) is attached to the die bonding layer 3, and the semiconductor wafer is fixed on the cut The mounting step of the wafer 10; the expanding step of expanding the distance between the semi-cut semiconductor chips; the incision maintaining step of maintaining the distance between the semiconductor chips; the peeling of the die bonding layer 3 and the adhesive layer 2 and attaching The pickup step of taking out the semiconductor chip (Die) in the state with the die bonding layer 3; and the die bonding step of making the semiconductor chip (Die) in the state where the die bonding layer 3 is attached to the bonded body. When performing these steps, the chip dicing tape (chip dicing film) of this embodiment is used as a manufacturing auxiliary tool.

於半切割步驟中，如圖2A及圖2B所示，實施用於將半導體積體電路切斷成小片(Die)之半切割加工。詳細而言，於半導體晶圓W之與電路面處於相反側之面貼附晶圓加工用帶T(參照圖2A)。又，將切晶環R安裝於晶圓加工用帶T(參照圖2A)。於貼附有晶圓加工用帶T之狀態下形成分割用之槽(參照圖2B)。於背面研磨步驟中，如圖2C及圖2D所示，對半導體晶圓進行磨削而使厚度變薄。詳細而言，於形成有槽之面上貼附背面研磨帶G，另一方面，將最初貼附之晶圓加工用帶T剝離(參照圖2C)。於貼附有背面研磨帶G之狀態下實施磨削加工，直至半導體晶圓W達到規定之厚度為止(參照圖2D)。 再者，於背面研磨步驟中，於半導體晶圓之厚度為20 μm以上且30 μm以下而特別薄之情形時，於後述之拾取步驟中使用銷構件P將半導體晶片頂起時，該半導體晶片容易發生變形、破裂，但是，本實施方式之切晶黏晶膜20由於具有上述構成，因此，能夠相對地抑制在拾取步驟中半導體晶片產生變形、破裂。In the half-cutting step, as shown in FIG. 2A and FIG. 2B, a half-cutting process for cutting the semiconductor integrated circuit into small pieces (Die) is performed. Specifically, the wafer processing tape T is attached to the surface of the semiconductor wafer W on the opposite side to the circuit surface (see FIG. 2A). In addition, the dicing ring R is attached to the wafer processing tape T (see FIG. 2A). In the state where the wafer processing tape T is attached, a groove for dividing is formed (refer to FIG. 2B). In the back grinding step, as shown in FIGS. 2C and 2D, the semiconductor wafer is ground to make the thickness thinner. Specifically, the back polishing tape G is attached to the surface where the grooves are formed, and on the other hand, the wafer processing tape T attached first is peeled off (see FIG. 2C). The grinding process is performed with the back grinding tape G attached until the semiconductor wafer W reaches a predetermined thickness (refer to FIG. 2D). Furthermore, in the back grinding step, when the thickness of the semiconductor wafer is 20 μm or more and 30 μm or less, and is particularly thin, when the semiconductor wafer is lifted up using the pin member P in the pickup step described later, the semiconductor wafer Deformation and cracking are easy to occur. However, since the dicing die attach film 20 of the present embodiment has the above-mentioned structure, it is possible to relatively suppress the occurrence of deformation and cracking of the semiconductor wafer during the pick-up step.

於安裝步驟中，如圖3A~圖3B所示，將切晶環R安裝於切晶帶10之黏著劑層2後，於露出之黏晶層3之面上貼附經半切割加工之半導體晶圓W(參照圖3A)。之後，從半導體晶圓W剝離背面研磨帶G(參照圖3B)。In the mounting step, as shown in FIGS. 3A to 3B, after the dicing ring R is mounted on the adhesive layer 2 of the dicing tape 10, a semi-cut semiconductor is attached to the exposed surface of the die bonding layer 3 Wafer W (refer to FIG. 3A). After that, the back polishing tape G is peeled from the semiconductor wafer W (see FIG. 3B).

於擴展步驟中，如圖4A~圖4C所示，將切晶環R固定於擴展裝置之保持件H。使用擴展裝置所具備之頂起構件U將切晶黏晶膜20從下側頂起，從而對切晶黏晶膜20進行拉伸而使其沿著面方向擴展(參照圖4B)。藉此，於特定之溫度條件下切斷經半切割加工之半導體晶圓W。上述溫度條件為例如-20~5℃，較佳為-15~0℃，更佳為-10~-5℃。藉由使頂起構件U下降而解除擴展狀態(參照圖4C)。 進而，於擴展步驟中，如圖5A~圖5B所示，於更高之溫度條件下(例如室溫(23±2℃))對切晶帶10進行拉伸而使面積擴大。藉此，使已切斷之相鄰之半導體晶片在膜面之面方向上分離，進一步擴大間隔。In the expansion step, as shown in FIGS. 4A to 4C, the crystal cutting ring R is fixed to the holder H of the expansion device. The dicing die attach film 20 is lifted up from the lower side using the elevating member U included in the expansion device, so that the dicing die attach film 20 is stretched to expand in the plane direction (see FIG. 4B). Thereby, the semi-cut semiconductor wafer W is cut under a specific temperature condition. The above-mentioned temperature conditions are, for example, -20 to 5°C, preferably -15 to 0°C, and more preferably -10 to -5°C. The extended state is released by lowering the lifting member U (refer to FIG. 4C). Furthermore, in the expansion step, as shown in FIGS. 5A to 5B, the dicing tape 10 is stretched under higher temperature conditions (for example, room temperature (23±2° C.)) to expand the area. Thereby, the cut adjacent semiconductor wafers are separated in the plane direction of the film surface, and the gap is further enlarged.

於切口維持步驟中，如圖6所示，對切晶帶10吹送熱風(例如100~130℃)而使切晶帶10熱收縮後，使其冷卻固化，維持所切斷之相鄰半導體晶片之間之距離(切口)。In the incision maintaining step, as shown in FIG. 6, hot air (for example, 100~130°C) is blown to the dicing tape 10 to heat shrink the dicing tape 10, and then it is cooled and solidified to maintain the cut adjacent semiconductor wafer The distance between (cut).

於拾取步驟中，如圖7所示，將貼附有黏晶層3之狀態之半導體晶片從切晶帶10之黏著劑層2剝離。詳細而言，使銷構件P上升，從而將拾取對象之半導體晶片隔著切晶帶10頂起。利用吸附夾具J來保持被頂起之半導體晶片。In the picking step, as shown in FIG. 7, the semiconductor wafer in the state where the die bonding layer 3 is attached is peeled off from the adhesive layer 2 of the dicing tape 10. Specifically, the pin member P is raised to lift up the semiconductor wafer to be picked up via the dicing tape 10. Use the suction jig J to hold the lifted semiconductor wafer.

於黏晶步驟中，使貼附有黏晶層3之狀態之半導體晶片接著於被接著體。In the die bonding step, the semiconductor chip in the state where the die bonding layer 3 is attached is attached to the adherend.

藉由本說明書而公開之事項包括以下內容。The matters disclosed in this manual include the following.

(1) 一種切晶黏晶膜，其具備： 於基材層上積層有黏著劑層之切晶帶，及 於上述切晶帶之黏著劑層上積層之黏晶層； 上述黏著劑層包含黏著劑及光聚合起始劑， 於對硬化前之上述黏著劑層進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之重量平均分子量Mw相對於在最高分子量側出現之峰之數平均分子量Mn之比、即多分散度Mw/Mn為1.3以上。(1) A diced chip adhesive film, which has: Laminating a dicing tape with an adhesive layer on the substrate layer, and A die-bonding layer laminated on the adhesive layer of the above-mentioned die-cutting tape; The adhesive layer includes an adhesive and a photopolymerization initiator, In the molecular weight distribution curve obtained by GPC measurement of the adhesive layer before curing, the ratio of the weight average molecular weight Mw of the peak appearing on the highest molecular weight side to the number average molecular weight Mn of the peak appearing on the highest molecular weight side, that is, polydispersity The degree Mw/Mn is 1.3 or more.

根據該構成，能夠相對地抑制上述光聚合起始劑從上述黏著劑層向上述黏晶層轉移。According to this configuration, it is possible to relatively suppress the transfer of the photopolymerization initiator from the adhesive layer to the crystal bonding layer.

(2) 如上述(1)所記載之切晶黏晶膜，其中上述多分散度Mw/Mn為2.0以上。(2) The diced wafer described in (1) above, wherein the polydispersity Mw/Mn is 2.0 or more.

根據該構成，能夠相對抑制上述光聚合起始劑從上述黏著劑層向上述黏晶層轉移，並且在將上述黏晶層及上述黏著劑層之間剝離而以貼附有上述黏晶層之狀態取出半導體晶片之拾取步驟中，能夠更容易地從上述黏著劑層剝離上述黏晶層。According to this configuration, it is possible to relatively suppress the transfer of the photopolymerization initiator from the adhesive layer to the die-bonding layer, and peel off between the die-bonding layer and the adhesive layer to attach the die-bonding layer. In the pick-up step of taking out the semiconductor wafer from the state, the die-bonding layer can be more easily peeled from the adhesive layer.

(3) 如上述(1)或(2)所記載之切晶黏晶膜，其中 上述多分散度Mw/Mn為10以下。 (4) 如上述(1)或(2)所記載之切晶黏晶膜，其中 上述多分散度Mw/Mn為5以下。 (5) 如上述(1)或(2)所記載之切晶黏晶膜，其中 上述多分散度Mw/Mn為3以下。(3) The diced wafer described in (1) or (2) above, wherein The above-mentioned polydispersity Mw/Mn is 10 or less. (4) The diced wafer described in (1) or (2) above, wherein The above-mentioned polydispersity Mw/Mn is 5 or less. (5) The diced wafer described in (1) or (2) above, wherein The above-mentioned polydispersity Mw/Mn is 3 or less.

(6) 如上述(1)至(5)中任一項所記載之切晶黏晶膜，其中 於對硬化前之上述黏著劑層進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之峰頂分子量之值為33,000以下。 (7) 如上述(1)至(6)中任一項所記載之切晶黏晶膜，其中 於對硬化前之上述黏著劑層進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之峰頂分子量之值為25,000以下。(6) The diced mucosal film as described in any one of (1) to (5) above, wherein In the molecular weight distribution curve obtained by GPC measurement of the adhesive layer before curing, the peak top molecular weight value of the peak appearing on the highest molecular weight side is 33,000 or less. (7) The diced mucosal film as described in any one of (1) to (6) above, wherein In the molecular weight distribution curve obtained by GPC measurement of the adhesive layer before curing, the peak top molecular weight value of the peak appearing on the highest molecular weight side is 25,000 or less.

根據該構成，能夠進一步抑制上述光聚合起始劑從上述黏著劑層向上述黏晶層轉移。According to this configuration, it is possible to further suppress the transfer of the photopolymerization initiator from the adhesive layer to the crystal bonding layer.

(8) 如上述(6)或(7)所記載之切晶黏晶膜，其中 於對硬化前之上述黏著劑層進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之峰頂分子量之值為4,000以上。 (9) 如上述(6)或(7)所記載之切晶黏晶膜，其中 於對硬化前之上述黏著劑層進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之峰頂分子量之值為8,000以上。(8) The diced wafer described in (6) or (7) above, wherein In the molecular weight distribution curve obtained by GPC measurement of the above-mentioned adhesive layer before curing, the peak top molecular weight of the peak appearing on the highest molecular weight side has a value of 4,000 or more. (9) The diced wafer described in (6) or (7) above, wherein In the molecular weight distribution curve obtained by GPC measurement of the adhesive layer before curing, the peak top molecular weight value of the peak appearing on the highest molecular weight side is 8,000 or more.

(10) 如上述(1)至(9)中任一項所記載之切晶黏晶膜，其中 硬化前之上述黏著劑層包含未達32質量%之溶膠成分。(10) The diced mucosal film as described in any one of (1) to (9) above, wherein The adhesive layer before curing contains less than 32% by mass of the sol component.

根據該構成，能夠進一步抑制上述光聚合起始劑從上述黏著劑層向上述黏晶層轉移。According to this configuration, it is possible to further suppress the transfer of the photopolymerization initiator from the adhesive layer to the crystal bonding layer.

(11) 如上述(1)至(10)中任一項所記載之切晶黏晶膜，其中 硬化前之上述黏著劑層包含23質量%以下之溶膠成分。(11) The diced mucosal film as described in any one of (1) to (10) above, wherein The adhesive layer before curing contains 23% by mass or less of sol component.

根據該構成，能夠進一步抑制上述光聚合起始劑從上述黏著劑層向上述黏晶層轉移，並且在將上述黏晶層及上述黏著劑層之間剝離而以貼附有上述黏晶層之狀態取出半導體晶片之拾取步驟中，能夠更容易地從上述黏著劑層剝離上述黏晶層。According to this configuration, it is possible to further suppress the transfer of the photopolymerization initiator from the adhesive layer to the die bonding layer, and to peel off between the die bonding layer and the adhesive layer to attach the die bonding layer. In the pick-up step of taking out the semiconductor wafer from the state, the die-bonding layer can be more easily peeled from the adhesive layer.

(12) 如上述(1)至(11)中任一項所記載之切晶黏晶膜，其中 上述黏晶層相對於上述黏著劑層之剝離力在上述黏著劑層硬化後未達0.18 N/20 mm。 (13) 如上述(1)至(12)中任一項所記載之切晶黏晶膜，其中 上述黏晶層相對於上述黏著劑層之剝離力在上述黏著劑層硬化後為0.15 N/20 mm以下。 (14) 如上述(1)至(13)中任一項所記載之切晶黏晶膜，其中 上述黏晶層相對於上述黏著劑層之剝離力在上述黏著劑層硬化後為0.07 N/20 mm以下。(12) The diced mucosal film as described in any one of (1) to (11) above, wherein The peeling force of the die-bonding layer relative to the adhesive layer does not reach 0.18 N/20 mm after the adhesive layer is hardened. (13) The diced mucosal film as described in any one of (1) to (12) above, wherein The peeling force of the die-bonding layer with respect to the adhesive layer is 0.15 N/20 mm or less after the adhesive layer is hardened. (14) The diced mucosal film as described in any one of (1) to (13) above, wherein The peeling force of the die-bonding layer with respect to the adhesive layer is 0.07 N/20 mm or less after the adhesive layer is hardened.

根據該構成，於將上述黏晶層與上述黏著劑層之間剝離而以貼附有上述黏晶層之狀態取出半導體晶片之拾取步驟中，能夠更容易地從上述黏著劑層剝離上述黏晶層。According to this configuration, in the pickup step of peeling off the bonding layer and the adhesive layer to take out the semiconductor wafer in the state where the bonding layer is attached, it is possible to more easily peel the bonding die from the adhesive layer Floor.

(15) 如上述(12)至(14)中任一項所記載之切晶黏晶膜，其中 上述黏晶層相對於上述黏著劑層之剝離力在上述黏著劑層硬化後為0.01 N/20 mm以上。(15) The diced mucosal film as described in any one of (12) to (14) above, wherein The peeling force of the die-bonding layer with respect to the adhesive layer is 0.01 N/20 mm or more after the adhesive layer is hardened.

(16) 如上述(1)至(15)中任一項所記載之切晶黏晶膜，其中 上述黏晶層相對於上述黏著劑層之剝離力在上述黏著劑層硬化前為0.3 N/20 mm以上。(16) The diced mucosal film as described in any one of (1) to (15) above, wherein The peeling force of the die-bonding layer with respect to the adhesive layer is 0.3 N/20 mm or more before the adhesive layer is hardened.

根據該構成，能夠藉由上述黏著劑層適度地保持上述黏晶層。藉此，能夠進一步抑制在上述黏晶層單片化之後產生之晶片浮起。According to this structure, the die-bonding layer can be appropriately held by the adhesive layer. Thereby, it is possible to further suppress the floating of the wafer generated after the singulation of the above-mentioned die-bonding layer.

(17) 如上述(16)所記載之切晶黏晶膜，其中 上述黏晶層相對於上述黏著劑層之剝離力在上述黏著劑層硬化前為5.0 N/20 mm以下。(17) As the diced wafer described in (16) above, where The peeling force of the die-bonding layer with respect to the adhesive layer is 5.0 N/20 mm or less before the adhesive layer is hardened.

再者，本發明之切晶黏晶膜不限定於上述實施方式。又，本發明之切晶黏晶膜不受上述作用效果限定。本發明之切晶黏晶膜可在不脫離本發明主旨之範圍內進行各種變更。 實施例In addition, the diced die attach film of the present invention is not limited to the above-mentioned embodiment. In addition, the diced chip mucous film of the present invention is not limited by the above-mentioned effects. The diced die attach film of the present invention can be variously modified without departing from the scope of the present invention. Example

接下來，列舉實施例對本發明進行進一步具體說明。以下之實施例係用於進一步詳細說明本發明之例子，並非對本發明之範圍進行限定。Next, examples are given to further specifically illustrate the present invention. The following examples are used to further illustrate the present invention in detail, and do not limit the scope of the present invention.

[實施例1] ＜切晶帶之製作＞ 向具備冷凝管、氮氣導入管、溫度計及攪拌裝置之反應容器內添加作為單體之丙烯酸2-羥基乙酯(以下稱為HEA)11質量份、丙烯酸異壬酯(以下稱為INA)89質量份、作為熱聚合起始劑之偶氮雙異丁腈(以下稱為AIBN)0.2質量份，進而，以上述單體之濃度達到38%之方式添加作為反應溶劑之乙酸丁酯後，於氮氣氣流下以62℃進行4小時聚合，以75℃進行2小時聚合處理，得到丙烯酸系聚合物A。 向該丙烯酸系聚合物A中添加2-甲基丙烯醯氧基乙基異氰酸酯(以下稱為MOI)12質量份、二月桂酸二丁基錫0.06質量份，於空氣氣流下在50℃下進行12小時之加成反應處理，得到丙烯酸系聚合物A'。 其次，相對於丙烯酸系聚合物A'100質量份，添加作為外部交聯劑之多異氰酸酯化合物(商品名「CORONATE L」、Nippon Polyurethane公司製)0.8質量份及光聚合起始劑(商品名「Omnirad127」、IGM Resins公司製造)2質量份，加入抗氧化劑(商品名「Irganox1010」、BASF JAPAN製造)0.01質量份，製作黏著劑溶液(以下有時亦稱為黏著劑溶液A)。 其次，使用塗抹器將黏著劑溶液A塗佈於具有實施了聚矽氧離型處理之面之PET隔離膜(厚度50 μm)之聚矽氧離型處理面上，於120℃下乾燥2分鐘，形成厚度10 μm之黏著劑層。其後，於該黏著劑層上貼合作為基材層之Gunze公司製之聚烯烴膜(商品名「FUNCRARE NED#125」、厚度125 μm)，於50℃下保存24小時，得到切晶帶A。 ＜黏晶層之製作＞ 相對於丙烯酸樹脂(商品名「TEISANRESIN SG-70L」、NAGASE CHEMTEX公司製、重量平均分子量為90萬)100質量份，將200質量份之環氧樹脂(商品名「KI-3000-4」、東都化成工業公司製)、200質量份之酚樹脂(商品名「MEHC-7851SS」、明和化成公司製)、350質量份(二氧化矽填料換算)之二氧化矽填料(商品名「SE2050-MCV」、ADMATECHS公司製、平均粒徑為500 nm)及2質量份之硬化促進劑(商品名「CUREZOL 2PHZ-PW」、四國化成工業公司製)添加至甲基乙基酮中，製備固體成分濃度為30質量%之接著劑組合物A。 其次，使用塗抹器在具有實施了聚矽氧離型處理之面之PET隔離膜(厚度50 μm)之聚矽氧離型處理面上塗佈接著劑組合物A，形成塗膜，針對該塗膜，於120℃下進行2分鐘之去溶劑處理。藉此，於PET隔離膜上製作厚度(平均厚度)10 μm之黏晶層。 ＜切晶黏晶膜之製作＞ 藉由將製作有黏晶層之PET隔離膜(以下稱為帶有黏晶層之PET隔離膜)沖切成330 mmϕ之圓形，從而得到330 mmϕ之帶有黏晶層之PET隔離膜。 其次，從切晶帶A去除PET隔離膜而使黏著劑層之一面露出後，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫(23±2℃)下將帶有黏晶層之PET隔離膜貼合於切晶帶A，藉此得到切晶黏晶膜A。 即，實施例1之切晶帶A係聚烯烴膜、黏著劑層、黏晶層及PET隔離膜依次積層而構成者。[Example 1] ＜Production of crystal cut ribbon＞ Add 11 parts by mass of 2-hydroxyethyl acrylate (hereafter referred to as HEA) and 89 mass parts of isononyl acrylate (hereafter referred to as INA) as a monomer into a reaction vessel equipped with a condenser, a nitrogen inlet tube, a thermometer, and a stirring device Parts, 0.2 parts by mass of azobisisobutyronitrile (hereinafter referred to as AIBN) as a thermal polymerization initiator, and then add butyl acetate as a reaction solvent so that the concentration of the above-mentioned monomers reaches 38%, and then in nitrogen Polymerization was carried out at 62°C for 4 hours under air flow, and polymerization treatment was carried out at 75°C for 2 hours to obtain acrylic polymer A. To this acrylic polymer A, 12 parts by mass of 2-methacryloxyethyl isocyanate (hereinafter referred to as MOI) and 0.06 parts by mass of dibutyltin dilaurate were added to the acrylic polymer A, and the process was carried out at 50°C for 12 hours under air flow The addition reaction treatment yields acrylic polymer A'. Next, with respect to 100 parts by mass of the acrylic polymer A', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane) as an external crosslinking agent and a photopolymerization initiator (trade name " "Omnirad 127", manufactured by IGM Resins) 2 parts by mass, 0.01 parts by mass of antioxidant (trade name "Irganox1010", manufactured by BASF JAPAN) are added to prepare an adhesive solution (hereinafter also referred to as adhesive solution A). Next, use an applicator to apply the adhesive solution A on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry at 120°C for 2 minutes , Form an adhesive layer with a thickness of 10 μm. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain a diced tape A. ＜Production of sticky layer＞ With respect to 100 parts by mass of acrylic resin (trade name "TEISANRESIN SG-70L", manufactured by NAGASE CHEMTEX, with a weight average molecular weight of 900,000), 200 parts by mass of epoxy resin (trade name "KI-3000-4", Toto Made by Kasei Kogyo Co., Ltd.), 200 parts by mass of phenol resin (trade name "MEHC-7851SS", produced by Meiwa Chemical Co., Ltd.), 350 parts by mass (calculated as silica filler) of silica filler (trade name "SE2050-MCV" , ADMATECHS Co., Ltd., with an average particle size of 500 nm) and 2 parts by mass of a hardening accelerator (trade name "CUREZOL 2PHZ-PW", manufactured by Shikoku Kasei Kogyo Co., Ltd.) are added to methyl ethyl ketone to prepare the solid content concentration It is 30% by mass of the adhesive composition A. Next, use an applicator to apply the adhesive composition A on the silicone release treatment surface of the PET release film (thickness 50 μm) with the silicone release treatment surface to form a coating film. The membrane is subjected to solvent removal treatment at 120°C for 2 minutes. In this way, a crystal bonding layer with a thickness (average thickness) of 10 μm was formed on the PET isolation film. ＜Production of slicing and sticking film＞ By punching the PET isolation film with the die-bonding layer (hereinafter referred to as the PET isolation film with the die-bonding layer) into a circle of 330 mmφ, a 330 mmφ PET isolation film with a die-sticking layer is obtained. Next, after removing the PET isolation film from the dicing tape A to expose one side of the adhesive layer, use a laminator to contact the exposed surface of the die-bonding layer with the exposed surface of the adhesive layer at room temperature (23 Attach the PET isolation film with the die-bonding layer to the dicing tape A at ±2°C, thereby obtaining the die-cutting die-bonding film A. That is, the dicing tape A of Example 1 is composed of a polyolefin film, an adhesive layer, a crystal bonding layer, and a PET isolation film laminated in this order.

[實施例2] ＜切晶帶之製作＞ 向與實施例1所記載之反應容器相同之反應容器內添加作為單體之HEA 16質量份、丙烯酸丁酯(以下稱為BA)84質量份、作為熱聚合起始劑之AIBN 0.2質量份，進而，以上述單體之濃度成為32%之方式添加作為反應溶劑之乙酸丁酯後，於氮氣氣流下以62℃進行4小時聚合，以75℃進行2小時聚合處理，得到丙烯酸系聚合物B。 向該丙烯酸系聚合物B中添加MOI 17質量份、二月桂酸二丁基錫0.09質量份，於空氣氣流下在50℃下進行12小時之加成反應處理，得到丙烯酸系聚合物B'。 其次，相對於丙烯酸系聚合物B' 100質量份，添加作為外部交聯劑之多異氰酸酯化合物(商品名「CORONATE L」、Nippon Polyurethane公司製造)0.8質量份及光聚合起始劑(商品名「Omnirad127」、IGM Resins公司製造)2質量份，加入抗氧化劑(商品名「Irganox1010」、BASF JAPAN製造)0.01質量份，製作黏著劑溶液(以下有時亦稱為黏著劑溶液B)。 其次，使用塗抹器將黏著劑溶液B塗佈於具有實施了聚矽氧離型處理之面之PET隔離膜(厚度50 μm)之聚矽氧離型處理面上，於120℃下乾燥2分鐘，形成厚度10 μm之黏著劑層。其後，於該黏著劑層上貼合作為基材層之Gunze公司製之聚烯烴膜(商品名「FUNCRARE NED#125」、厚度125 μm)，於50℃下保存24小時，得到切晶帶B。 ＜黏晶層之製作＞ 與實施例1同樣地製作。 ＜切晶黏晶膜之製作＞ 與實施例1同樣地獲得330 mmϕ之帶有黏晶層之PET隔離膜後，從切晶帶B去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將帶有黏晶層之PET隔離膜貼合於切晶帶B，藉此得到切晶黏晶膜B。[Example 2] ＜Production of crystal cut ribbon＞ Add 16 parts by mass of HEA as a monomer, 84 parts by mass of butyl acrylate (hereinafter referred to as BA), and 0.2 parts by mass of AIBN as a thermal polymerization initiator into the same reaction vessel as that described in Example 1. Furthermore, after adding butyl acetate as a reaction solvent so that the concentration of the above monomers became 32%, polymerization was carried out at 62°C for 4 hours under nitrogen gas flow, and polymerization treatment was carried out at 75°C for 2 hours to obtain acrylic polymer B . To this acrylic polymer B, 17 parts by mass of MOI and 0.09 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain acrylic polymer B'. Next, with respect to 100 parts by mass of the acrylic polymer B', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane) as an external crosslinking agent and a photopolymerization initiator (trade name " "Omnirad 127", manufactured by IGM Resins Corporation) 2 parts by mass, 0.01 parts by mass of antioxidant (trade name "Irganox1010", manufactured by BASF JAPAN) are added to prepare an adhesive solution (hereinafter also referred to as adhesive solution B). Next, use an applicator to apply the adhesive solution B on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry at 120°C for 2 minutes , Form an adhesive layer with a thickness of 10 μm. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain a diced tape B. ＜Production of sticky layer＞ It was produced in the same manner as in Example 1. ＜Production of slicing and sticking film＞ After obtaining a 330 mm ϕ PET isolation film with a die-attach layer in the same manner as in Example 1, remove the PET isolation film from the dicing tape B to expose one side of the adhesive layer, and use a laminator to expose the die-attach layer The surface is in contact with the exposed surface of the adhesive layer, and the PET isolation film with the die-bonding layer is attached to the dicing tape B at room temperature, thereby obtaining the die-cutting die-bonding film B.

[實施例3] ＜切晶帶之製作＞ 向與實施例1所記載之反應容器相同之反應容器內添加作為單體之HEA 11質量份、丙烯酸2-乙基己酯(以下稱為2EHA)89質量份、作為熱聚合起始劑之AIBN 0.2質量份，進而，以上述單體之濃度成為36%之方式添加作為反應溶劑之乙酸丁酯後，於氮氣氣流下以62℃進行4小時聚合，以75℃進行2小時聚合處理，得到丙烯酸系聚合物C。 向該丙烯酸系聚合物C中添加MOI 13質量份、二月桂酸二丁基錫0.07質量份，於空氣氣流下在50℃下進行12小時之加成反應處理，得到丙烯酸系聚合物C'。 其次，相對於丙烯酸系聚合物C'100質量份，添加作為外部交聯劑之多異氰酸酯化合物(商品名「CORONATE L」、Nippon Polyurethane公司製)0.8質量份及光聚合起始劑(商品名「Omnirad127」、IGM Resins公司製造)2質量份，加入抗氧化劑(商品名「Irganox1010」、BASF JAPAN製造)0.01質量份，製作黏著劑溶液(以下有時亦稱為黏著劑溶液C)。 其次，使用塗抹器將黏著劑溶液C塗佈於具有實施了聚矽氧離型處理之面之PET隔離膜(厚度50 μm)之聚矽氧離型處理面上，於120℃下乾燥2分鐘，形成厚度10 μm之黏著劑層。其後，於該黏著劑層上貼合作為基材層之Gunze公司製之聚烯烴膜(商品名「FUNCRARE NED#125」、厚度125 μm)，於50℃下保存24小時，得到切晶帶C。 ＜黏晶層之製作＞ 與實施例1同樣地製作。 ＜切晶黏晶膜之製作＞ 與實施例1同樣地獲得330 mmϕ之帶有黏晶層之PET隔離膜後，從切晶帶C去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面抵接於黏著劑層之露出面之方式，於室溫下將帶有黏晶層之PET隔離膜貼合於切晶帶C，藉此得到切晶黏晶膜C。[Example 3] ＜Production of crystal cut ribbon＞ Add 11 parts by mass of HEA as a monomer, 89 parts by mass of 2-ethylhexyl acrylate (hereinafter referred to as 2EHA), and AIBN as a thermal polymerization initiator into the same reaction vessel as that described in Example 1. 0.2 parts by mass, further, butyl acetate as a reaction solvent was added so that the concentration of the above monomers became 36%, polymerization was carried out at 62°C for 4 hours under nitrogen gas flow, and polymerization treatment was carried out at 75°C for 2 hours to obtain acrylic acid系polymer C. To the acrylic polymer C, 13 parts by mass of MOI and 0.07 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain an acrylic polymer C′. Next, with respect to 100 parts by mass of the acrylic polymer C', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane) as an external crosslinking agent and a photopolymerization initiator (trade name " "Omnirad 127", manufactured by IGM Resins) 2 parts by mass, 0.01 parts by mass of antioxidant (trade name "Irganox1010", manufactured by BASF JAPAN) was added to prepare an adhesive solution (hereinafter also referred to as adhesive solution C). Next, use an applicator to apply the adhesive solution C on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry at 120°C for 2 minutes , Form an adhesive layer with a thickness of 10 μm. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain a diced tape C. ＜Production of sticky layer＞ It was produced in the same manner as in Example 1. ＜Production of slicing and sticking film＞ After obtaining a 330 mm ϕ PET isolation film with a die-attach layer in the same manner as in Example 1, remove the PET isolation film from the dicing tape C to expose one side of the adhesive layer, and use a laminator to expose the die-attach layer With the surface abutting the exposed surface of the adhesive layer, the PET isolation film with the crystal bonding layer is attached to the dicing tape C at room temperature, thereby obtaining the dicing chip adhesive film C.

[實施例4] ＜切晶帶之製作＞ 於與實施例1記載之反應容器相同之反應容器內加入作為單體之HEA 16質量份、INA 84質量份、作為熱聚合起始劑之AIBN 0.2質量份，進而，以上述單體之濃度成為32%之方式添加作為反應溶劑之乙酸丁酯後，於氮氣氣流下以62℃進行4小時聚合，以75℃進行2小時聚合處理，得到丙烯酸系聚合物D。 於該丙烯酸系聚合物D中添加MOI 17質量份、二月桂酸二丁基錫0.12質量份，於空氣氣流下在50℃下進行12小時加成反應處理，得到丙烯酸系聚合物D'。 其次，相對於丙烯酸系聚合物D'100質量份，添加作為外部交聯劑之多異氰酸酯化合物(商品名「CORONATE L」、Nippon Polyurethane公司製)0.8質量份及光聚合起始劑(商品名「Omnirad127」、IGM Resins公司製造)2質量份，加入抗氧化劑(商品名「Irganox1010」、BASF JAPAN製造)0.01質量份，製作黏著劑溶液(以下有時亦稱為黏著劑溶液D)。 其次，使用塗抹器將黏著劑溶液D塗佈於具有實施了聚矽氧離型處理之面之PET隔離膜(厚度50 μm)之聚矽氧離型處理面上，於120℃下乾燥2分鐘，形成厚度10 μm之黏著劑層。其後，於該黏著劑層上貼合作為基材層之Gunze公司製之聚烯烴膜(商品名「FUNCRARE NED#125」、厚度125 μm)，於50℃下保存24小時，得到切晶帶D。 ＜黏晶層之製作＞ 與實施例1同樣地製作。 ＜切晶黏晶膜之製作＞ 與實施例1同樣地獲得330 mmϕ之帶有黏晶層之PET隔離膜後，從切晶帶D去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將帶有黏晶層之PET隔離膜貼合於切晶帶D，藉此得到切晶黏晶膜D。[Example 4] ＜Production of crystal cut ribbon＞ 16 parts by mass of HEA as monomers, 84 parts by mass of INA, and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added to the same reaction vessel as the reaction vessel described in Example 1, and the concentration of the above-mentioned monomers became After adding 32% of butyl acetate as a reaction solvent, polymerization was carried out at 62°C for 4 hours under nitrogen gas flow, and polymerization treatment was carried out at 75°C for 2 hours to obtain acrylic polymer D. To this acrylic polymer D, 17 parts by mass of MOI and 0.12 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50°C for 12 hours under an air stream to obtain an acrylic polymer D'. Next, with respect to 100 parts by mass of the acrylic polymer D', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane) as an external crosslinking agent and a photopolymerization initiator (trade name " "Omnirad 127", manufactured by IGM Resins) 2 parts by mass, 0.01 parts by mass of antioxidant (trade name "Irganox1010", manufactured by BASF JAPAN) are added to prepare an adhesive solution (hereinafter also referred to as adhesive solution D). Next, use an applicator to apply the adhesive solution D on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry at 120°C for 2 minutes , Form an adhesive layer with a thickness of 10 μm. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain a diced tape D. ＜Production of sticky layer＞ It was produced in the same manner as in Example 1. ＜Production of slicing and sticking film＞ After obtaining a PET isolation film with a die-bonding layer of 330 mmφ in the same manner as in Example 1, remove the PET isolation film from the dicing tape D to expose one side of the adhesive layer, and use a laminator to expose the die-bonding layer The surface is in contact with the exposed surface of the adhesive layer, and the PET isolation film with the crystal bonding layer is attached to the dicing tape D at room temperature, thereby obtaining the dicing chip adhesive film D.

[實施例5] ＜切晶帶之製作＞ 於與實施例1記載之反應容器相同之反應容器內加入作為單體之HEA 9質量份、丙烯酸月桂酯(以下稱為LA)91質量份、作為熱聚合起始劑之AIBN 0.2質量份，進而，以上述單體之濃度成為30%之方式加入作為反應溶劑之乙酸丁酯後，於氮氣氣流下在62℃下進行4小時聚合，於75℃下進行2小時聚合處理，得到丙烯酸系聚合物E。 於該丙烯酸系聚合物E中添加MOI 10質量份、二月桂酸二丁基錫0.21質量份，於空氣氣流下在50℃下進行12小時加成反應處理，得到丙烯酸系聚合物E'。 其次，相對於丙烯酸系聚合物E'100質量份，添加作為外部交聯劑之多異氰酸酯化合物(商品名「CORONATE L」、Nippon Polyurethane公司製造)0.8質量份及光聚合起始劑(商品名「Omnirad127」、IGM Resins公司製造)2質量份，加入抗氧化劑(商品名「Irganox1010」、BASF JAPAN製造)0.01質量份及作為黏著賦予劑之萜烯酚樹脂(商品名「YS PolystarS145」、Yasuhara Chemical Co., Ltd.製造)5質量份，製作黏著劑溶液(以下亦稱為黏著劑溶液E)。 其次，使用塗抹器將黏著劑溶液E塗佈於具有實施了聚矽氧離型處理之面之PET隔離膜(厚度50 μm)之聚矽氧離型處理面上，於120℃下乾燥2分鐘，形成厚度10 μm之黏著劑層。其後，於該黏著劑層上貼合作為基材層之Gunze公司製之聚烯烴膜(商品名「FUNCRARE NED#125」、厚度125 μm)，於50℃下保存24小時，得到切晶帶E。 ＜黏晶層之製作＞ 與實施例1同樣地製作。 ＜切晶黏晶膜之製作＞ 與實施例1同樣地獲得330 mmϕ之帶有黏晶層之PET隔離膜後，從切晶帶E去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將帶有黏晶層之PET隔離膜貼合於切晶帶E，藉此得到切晶黏晶膜E。[Example 5] ＜Production of crystal cut ribbon＞ In the same reaction vessel as that described in Example 1, 9 parts by mass of HEA as a monomer, 91 parts by mass of lauryl acrylate (hereinafter referred to as LA), and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added to the reaction vessel. After adding butyl acetate as the reaction solvent so that the concentration of the above-mentioned monomers becomes 30%, polymerization is carried out at 62°C for 4 hours under nitrogen gas flow, and polymerization treatment is carried out at 75°C for 2 hours to obtain acrylic polymer E. To the acrylic polymer E, 10 parts by mass of MOI and 0.21 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain an acrylic polymer E'. Next, with respect to 100 parts by mass of the acrylic polymer E', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane) as an external crosslinking agent and a photopolymerization initiator (trade name " Omnirad127", manufactured by IGM Resins Corporation) 2 parts by mass, 0.01 parts by mass of antioxidant (trade name "Irganox1010", manufactured by BASF JAPAN) and terpene phenol resin (trade name "YS Polystar S145", Yasuhara Chemical Co. ., Ltd.) 5 parts by mass to prepare an adhesive solution (hereinafter also referred to as adhesive solution E). Next, use an applicator to apply the adhesive solution E on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry at 120°C for 2 minutes , Form an adhesive layer with a thickness of 10 μm. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain a diced tape E. ＜Production of sticky layer＞ It was produced in the same manner as in Example 1. ＜Production of slicing and sticking film＞ After obtaining a 330 mm ϕ PET isolation film with a die-attach layer in the same manner as in Example 1, remove the PET isolation film from the dicing tape E to expose one side of the adhesive layer, and use a laminator to expose the die-attach layer The surface is in contact with the exposed surface of the adhesive layer, and the PET isolation film with the die-bonding layer is attached to the dicing tape E at room temperature, thereby obtaining the die-cutting die-bonding film E.

[實施例6] ＜切晶帶之製作＞ 於與實施例1記載之反應容器相同之反應容器內加入作為單體之HEA 9質量份、LA 91質量份、作為熱聚合起始劑之AIBN 0.2質量份，進而，以上述單體之濃度成為34%之方式加入作為反應溶劑之乙酸丁酯後，於氮氣氣流下在62℃下進行4小時聚合，於75℃下進行2小時聚合處理，得到丙烯酸系聚合物F。 於該丙烯酸系聚合物F中添加MOI 10質量份、二月桂酸二丁基錫0.08質量份，於空氣氣流下在50℃下進行12小時加成反應處理，得到丙烯酸系聚合物F'。 其次，相對於丙烯酸系聚合物F'100質量份，添加作為外部交聯劑之多異氰酸酯化合物(商品名「CORONATE L」、Nippon Polyurethane公司製)0.8質量份及光聚合起始劑(商品名「Omnirad127」IGM Resins公司製造)2質量份，加入抗氧化劑(商品名「Irganox1010」、BASF JAPAN製造)0.01質量份，製作黏著劑溶液(以下亦稱為黏著劑溶液F)。 其次，使用塗抹器將黏著劑溶液F塗佈於具有實施了聚矽氧離型處理之面之PET隔離膜(厚度50 μm)之聚矽氧離型處理面上，於120℃下乾燥2分鐘，形成厚度10 μm之黏著劑層。其後，於該黏著劑層上貼合作為基材層之Gunze公司製之聚烯烴膜(商品名「FUNCRARE NED#125」、厚度125 μm)，於50℃下保存24小時，得到切晶帶F。 ＜黏晶層之製作＞ 與實施例1同樣地製作。 ＜切晶黏晶膜之製作＞ 與實施例1同樣地獲得330 mmϕ之帶有黏晶層之PET隔離膜後，從切晶帶F去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將帶有黏晶層之PET隔離膜貼合於切晶帶F，藉此得到切晶黏晶膜F。[Example 6] ＜Production of crystal cut ribbon＞ 9 parts by mass of HEA as a monomer, 91 parts by mass of LA, and 0.2 part by mass of AIBN as a thermal polymerization initiator were added to the same reaction vessel as the reaction vessel described in Example 1, and the concentration of the above-mentioned monomer was After adding butyl acetate as the reaction solvent at 34%, polymerization was carried out at 62°C for 4 hours under nitrogen gas flow, and polymerization treatment was carried out at 75°C for 2 hours to obtain acrylic polymer F. To this acrylic polymer F, 10 parts by mass of MOI and 0.08 parts by mass of dibutyltin dilaurate were added, and addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain acrylic polymer F'. Next, with respect to 100 parts by mass of the acrylic polymer F', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane) as an external crosslinking agent and a photopolymerization initiator (trade name " 2 parts by mass of "Omnirad127" manufactured by IGM Resins), 0.01 parts by mass of antioxidant (trade name "Irganox1010", manufactured by BASF JAPAN) were added to prepare an adhesive solution (hereinafter also referred to as adhesive solution F). Next, use an applicator to apply the adhesive solution F on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry at 120°C for 2 minutes , Form an adhesive layer with a thickness of 10 μm. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain a diced tape F. ＜Production of sticky layer＞ It was produced in the same manner as in Example 1. ＜Production of slicing and sticking film＞ After obtaining a 330 mm ϕ PET isolation film with a die-bonding layer in the same manner as in Example 1, remove the PET isolation film from the dicing tape F to expose one side of the adhesive layer, and use a laminator to expose the die-bonding layer The surface is in contact with the exposed surface of the adhesive layer, and the PET isolation film with the die-bonding layer is attached to the dicing tape F at room temperature, thereby obtaining the die-cutting die-bonding film F.

[比較例1] ＜切晶帶之製作＞ 於與實施例1記載之反應容器相同之反應容器內加入作為單體之HEA19質量份、丙烯酸乙酯(以下稱為EA)81質量份、作為熱聚合起始劑之AIBN 0.2質量份，進而，以上述單體之濃度成為42%之方式加入作為反應溶劑之乙酸丁酯後，於氮氣氣流下在62℃下進行4小時聚合，於75℃下進行2小時聚合處理，得到丙烯酸系聚合物G。 於該丙烯酸系聚合物G中添加MOI 21質量份、二月桂酸二丁基錫0.03質量份，於空氣氣流下在50℃下進行12小時加成反應處理，得到丙烯酸系聚合物G'。 其次，相對於丙烯酸系聚合物G'100質量份，添加作為外部交聯劑之多異氰酸酯化合物(商品名「CORONATE L」、Nippon Polyurethane公司製)0.8質量份及光聚合起始劑(商品名「Omnirad127」IGM Resins公司製造)2質量份，加入抗氧化劑(商品名「Irganox1010」、BASF JAPAN製造)0.01質量份，製作黏著劑溶液(以下有時亦稱為黏著劑溶液G)。 其次，使用塗抹器將黏著劑溶液G塗佈於具有實施了聚矽氧離型處理之面之PET隔離膜(厚度50 μm)之聚矽氧離型處理面上，於120℃下乾燥2分鐘，形成厚度10 μm之黏著劑層。其後，於該黏著劑層上貼合作為基材層之Gunze公司製之聚烯烴膜(商品名「FUNCRARE NED#125」、厚度125 μm)，於50℃下保存24小時，得到切晶帶G。 ＜黏晶層之製作＞ 與實施例1同樣地製作。 ＜切晶黏晶膜之製作＞ 與實施例1同樣地獲得330 mmϕ之帶有黏晶層之PET隔離膜後，從切晶帶G去除PET隔離膜而使黏著劑層之一面露出，使用層壓機，以黏晶層之露出面與黏著劑層之露出面抵接之方式，於室溫下將帶有黏晶層之PET隔離膜貼合於切晶帶G，藉此得到切晶黏晶膜G。[Comparative Example 1] ＜Production of crystal cut ribbon＞ In the same reaction vessel as the reaction vessel described in Example 1, 19 parts by mass of HEA as a monomer, 81 parts by mass of ethyl acrylate (hereinafter referred to as EA), and 0.2 parts by mass of AIBN as a thermal polymerization initiator were added, and further, After adding butyl acetate as the reaction solvent so that the concentration of the above monomers became 42%, polymerization was performed at 62°C for 4 hours under nitrogen gas flow, and polymerization treatment was performed at 75°C for 2 hours to obtain acrylic polymer G . To this acrylic polymer G, 21 parts by mass of MOI and 0.03 parts by mass of dibutyltin dilaurate were added, and the addition reaction treatment was performed at 50° C. for 12 hours under an air stream to obtain acrylic polymer G′. Next, with respect to 100 parts by mass of the acrylic polymer G', 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Nippon Polyurethane) as an external crosslinking agent and a photopolymerization initiator (trade name " 2 parts by mass of "Omnirad 127" manufactured by IGM Resins), 0.01 parts by mass of antioxidant (trade name "Irganox1010", manufactured by BASF JAPAN) are added to prepare an adhesive solution (hereinafter also referred to as adhesive solution G). Next, use an applicator to apply the adhesive solution G on the silicone release treatment surface of the PET isolation film (thickness 50 μm) with the silicone release treatment surface, and dry at 120°C for 2 minutes , Form an adhesive layer with a thickness of 10 μm. After that, a polyolefin film (trade name "FUNCRARE NED#125", thickness 125 μm) made by Gunze Co., Ltd. (trade name "FUNCRARE NED#125", thickness 125 μm), which was a base layer, was pasted on the adhesive layer, and stored at 50°C for 24 hours to obtain a diced tape G. ＜Production of sticky layer＞ It was produced in the same manner as in Example 1. ＜Production of slicing and sticking film＞ After obtaining a 330 mm ϕ PET isolation film with a die-attach layer in the same manner as in Example 1, remove the PET isolation film from the dicing tape G to expose one side of the adhesive layer, and use a laminator to expose the die-attach layer The surface is in contact with the exposed surface of the adhesive layer, and the PET isolation film with the die-bonding layer is attached to the dicing tape G at room temperature, thereby obtaining the die-cutting die-bonding film G.

(溶膠成分之質量比率) 對於各例之切晶黏晶膜之硬化前之黏著劑層，按照以下之步驟求出溶膠成分之質量比率。 (1)從硬化前之黏著劑層取約0.2 g之樣品。 (2)用網狀片材包裹上述樣品之後，於室溫下浸漬於約30 mL之甲苯中1週。 (3)從甲苯中取出網狀片材，將網狀片材中所含之甲苯不溶成分去除。 (4)使上述甲苯不溶成分在大氣壓下以130℃乾燥約2小時之後，稱量上述甲苯不溶成分。 (5)按照下述式(1)算出凝膠成分之質量比率，以凝膠分率之質量比率之算出值為基礎按照下述式(2)算出溶膠成分之質量比率。 將其結果示於以下之表2。(Mass ratio of sol components) For the adhesive layer before hardening of the diced chip adhesive film of each example, the mass ratio of the sol component was calculated according to the following steps. (1) Take a sample of about 0.2 g from the adhesive layer before hardening. (2) After wrapping the above sample with a mesh sheet, immerse it in about 30 mL of toluene for 1 week at room temperature. (3) Take out the net-like sheet from the toluene, and remove the toluene-insoluble components contained in the net-like sheet. (4) After drying the toluene-insoluble component under atmospheric pressure at 130°C for about 2 hours, the toluene-insoluble component is weighed. (5) Calculate the mass ratio of the gel component according to the following formula (1), and calculate the mass ratio of the sol component based on the calculated value of the mass ratio of the gel fraction according to the following formula (2). The results are shown in Table 2 below.

[數3] 凝膠成分之質量比率(質量%)=[(甲苯不溶成分之稱量值)/所取樣品之質量]×100   ···(1)[Number 3] The mass ratio of gel components (mass%)=[(weighing value of toluene insoluble components)/mass of sample taken]×100 ···(1)

[數4] 溶膠成分之質量比率(質量%)=100－上述式(1)中求得之凝膠成分之質量比率   ···(2)[Number 4] The mass ratio of the sol component (mass%) = 100-the mass ratio of the gel component obtained in the above formula (1) ····(2)

(GPC測定) 對於各例之切晶黏晶膜之硬化前之黏著劑層，使用東曹公司製造之HLC-8220GPC作為分析裝置，按照以下之步驟進行GPC測定，對按照以下之步驟而得到之GPC測定之結果進行解析，得到關於分子量之資訊。(GPC measurement) For each example of the adhesive layer before hardening of the chip adhesive film, the HLC-8220GPC manufactured by Tosoh Corporation was used as the analysis device, and the GPC measurement was carried out according to the following steps. The results of the GPC measurement obtained according to the following steps Perform analysis to get information about molecular weight.

[測定試樣之製備] (1)由硬化前之黏著劑層2取約0.2 g之樣品。 (2)利用網狀片材包裹上述樣品之後，於室溫下在約30 mL之甲苯中浸漬1週。 (3)從甲苯中取出網狀片材，將網狀片材中包含之甲苯不溶成分去除，得到包含甲苯溶解成分之甲苯溶液。 (4)邊減壓邊在45℃以下之溫度下對上述甲苯溶液進行處理，從上述甲苯溶液中去除甲苯，得到甲苯溶解成分之固形物。 (5)使上述固形物以濃度成為0.2質量%之方式溶解於四氫呋喃(THF)中製成THF溶液之後，放置一晚。 (6)將放置了一晚之THF溶液用0.45 μm之膜濾器進行過濾，將得到之濾液作為測定試樣。[Preparation of test sample] (1) Take a sample of about 0.2 g from the adhesive layer 2 before hardening. (2) After wrapping the above sample with a mesh sheet, immerse it in about 30 mL of toluene at room temperature for 1 week. (3) Take out the mesh sheet from the toluene, remove the toluene-insoluble components contained in the mesh sheet, and obtain a toluene solution containing toluene-soluble components. (4) The toluene solution is treated at a temperature of 45°C or lower while reducing pressure to remove the toluene from the toluene solution to obtain a solid substance of the toluene-soluble component. (5) After dissolving the solid substance in tetrahydrofuran (THF) so that the concentration becomes 0.2% by mass to prepare a THF solution, it is left overnight. (6) Filter the THF solution left overnight with a 0.45 μm membrane filter, and use the obtained filtrate as the measurement sample.

[測定條件] ・管柱：東曹公司製造之TSKgel quaudcolumn SuperHZ-L(以下稱為第1管柱)1根、以及 東曹公司製造之TSKgel SuperHZM-M(以下稱為第2管柱)2根 上述各管柱以使2根上述第2管柱串聯連接於上述第1管柱之下游側、後述之溶析液從上述第1管柱側流入之方式配置於上述分析裝置。 ・管柱溫度：40℃ ・溶析液：四氫呋喃(THF) ・流量：樣品泵流量 0.3 mL/分鐘 參比泵流量 1.0 mL/分鐘 ・注入量：10 μL ・檢測器：示差折射率檢測器(RI)[Measurement conditions] ・Column: TSKgel quaudcolumn SuperHZ-L (hereinafter referred to as the first column) manufactured by Tosoh Corporation, and 2 TSKgel SuperHZM-M (hereinafter referred to as the second column) manufactured by Tosoh Corporation Each of the above-mentioned columns is arranged in the analysis device so that two of the above-mentioned second columns are connected in series on the downstream side of the above-mentioned first column, and the eluate described later flows in from the side of the above-mentioned first column. ・Column temperature: 40℃ ・Eluent: Tetrahydrofuran (THF) ・Flow rate: sample pump flow rate 0.3 mL/min Reference pump flow rate 1.0 mL/min ・Injection volume: 10 μL ・Detector: Differential refractive index detector (RI)

又，為了基於對上述測定試樣測定而得之結果得到分子量分佈曲線，以成為上述表1所示之配混質量之方式計量東曹公司製造之各標準聚苯乙烯，使計量之各標準聚苯乙烯溶解於100 mL之THF中，得到標準聚苯乙烯溶液STD1及標準聚苯乙烯溶液STD2，對其等亦使用上述測定裝置在上述測定條件下進行GPC測定。In addition, in order to obtain a molecular weight distribution curve based on the results obtained from the measurement of the above-mentioned measurement sample, each standard polystyrene manufactured by Tosoh Corporation was measured so that the compounding mass shown in Table 1 above was used, and the measured standard polystyrene Styrene was dissolved in 100 mL of THF to obtain a standard polystyrene solution STD1 and a standard polystyrene solution STD2, which were also measured by GPC using the above-mentioned measuring device under the above-mentioned measuring conditions.

對於對上述測定試樣、上述STD1、及上述STD2進行GPC測定而得到之結果，使用東曹公司製造之解析軟體GPC-8020 Model II(資料管理 Version 5.10)進行資料解析。 於使用上述解析軟體之資料解析中，首先，製作關於上述STD1及上述STD2之校準曲線(以橫軸為時間(分鐘)、以縱軸為重量平均分子量之對數之校準曲線)，以該等校準曲線為基準進行關於上述測定試樣之分子量之資料解析。關於上述測定試樣之分子量之資料解析係在得到關於在層析圖上最早檢測到之峰P1(最高分子量側之峰)之分子量分佈曲線之基礎上進行。藉由對關於峰P1之分子量分佈曲線進行資料解析，能夠得到關於峰P1之數平均分子量Mn及重量平均分子量Mw。 再者，由各例之切晶黏晶膜之黏著劑層得到之測定試樣均在最早檢測到之峰P1之下降部分及接著峰P1而檢測到之峰P2之上升部分觀察到重疊，因此，以峰P1之上升開始部分為基點以沿水平方向延伸之方式畫基線，從上述基線向在峰P1之下降部分及峰P2之上升部分之間產生之谷部分(最凹陷之部分)垂直畫線，對於由從峰P1之上升開始部分到上述谷部分為止、上述基線、及從上述基線向上述谷部分垂直畫出之線所分隔出之區域進行解析，藉此，可獲得關於峰P1之數平均分子量Mn及重量平均分子量Mw。 於以下之表2中示出峰P1之數平均分子量Mn、峰P1之重量平均分子量Mw、及峰P1之重量平均分子量Mw相對於峰P1之數平均分子量Mn之比。 此外，於以下之表2中還示出峰P1之峰頂分子量之值。For the results obtained by GPC measurement of the above-mentioned measurement sample, the above-mentioned STD1, and the above-mentioned STD2, analysis software GPC-8020 Model II (Data Management Version 5.10) manufactured by Tosoh Corporation was used for data analysis. In the data analysis using the above analysis software, firstly, create calibration curves for the above STD1 and the above STD2 (the horizontal axis is the time (minute), the vertical axis is the logarithm of the weight average molecular weight calibration curve), and these The curve is used as the basis for data analysis on the molecular weight of the above-mentioned measurement sample. The data analysis on the molecular weight of the above-mentioned measurement sample is performed on the basis of obtaining the molecular weight distribution curve on the peak P1 (the peak on the highest molecular weight side) detected earliest on the chromatogram. By analyzing the data on the molecular weight distribution curve of the peak P1, the number average molecular weight Mn and the weight average molecular weight Mw of the peak P1 can be obtained. Furthermore, the measurement samples obtained from the adhesive layer of the dicing chip adhesive film of each case are all observed to overlap in the descending part of the peak P1 detected earliest and the ascending part of the peak P2 detected following the peak P1. Therefore, , Using the starting part of peak P1 as the base point to draw a baseline extending in the horizontal direction, draw vertically from the above baseline to the valley part (the most depressed part) generated between the falling part of peak P1 and the rising part of peak P2 Analyze the area separated by the line from the rising part of the peak P1 to the valley part, the baseline, and the line drawn vertically from the baseline to the valley part, by which the information about the peak P1 can be obtained Number average molecular weight Mn and weight average molecular weight Mw. Table 2 below shows the ratio of the number average molecular weight Mn of the peak P1, the weight average molecular weight Mw of the peak P1, and the weight average molecular weight Mw of the peak P1 to the number average molecular weight Mn of the peak P1. In addition, the value of the peak top molecular weight of the peak P1 is also shown in Table 2 below.

(光聚合起始劑之轉移比率) 對各例之切晶黏晶膜測定光聚合起始劑從黏著劑層向黏晶層之轉移比率。 光聚合起始劑之轉移比率由從不與黏晶層重疊之黏著劑層部分採取之樣品中所含之光聚合起始劑之質量比率(第1質量比率)、及從與黏著劑層重疊之黏晶層部分採取之樣品中所含之光聚合起始劑之質量比率(第2質量比率)算出。(Transfer ratio of photopolymerization initiator) The transfer rate of the photopolymerization initiator from the adhesive layer to the die-bonding layer was measured for the diced die-bonding film of each case. The transfer ratio of the photopolymerization initiator is from the mass ratio of the photopolymerization initiator contained in the sample taken from the part of the adhesive layer that does not overlap with the adhesive layer (the first mass ratio), and from the overlap with the adhesive layer Calculate the mass ratio (the second mass ratio) of the photopolymerization initiator contained in the sample taken from the sticky layer part.

上述第1質量比率按照以下之步驟來求出。 (1)對於各例之切晶黏晶膜，取未積層有黏晶層、且距離黏晶層1 cm以上之黏著劑層部分約0.1 g。 (2)將所取之黏著劑層加入至4 mL之氯仿中後，於陰暗處振盪一晚(約16小時)，藉此，於氯仿中提取黏著劑層中之光聚合起始劑。 (3)於光聚合起始劑提取後之氯仿溶液中加入7 mL之甲醇，使光聚合起始劑以外之成分再沈澱，利用膜濾器濾取再沈澱之成分，得到光聚合起始劑之溶解液(氯仿與甲醇之混合溶液)。將其作為測定試樣。 (4)利用HPLC對上述測定試樣進行分析，測定上述測定試樣中之上述光聚合起始劑之濃度(單位為μg/mL)。 (5)將上述光聚合起始劑之濃度與溶解有上述光聚合起始劑之混合溶劑(氯仿與甲醇之混合溶劑)之容積11 mL相乘，算出上述測定試樣中之上述光聚合起始劑之質量(單位為μg)。 (6)藉由用上述測定試樣中之上述光聚合起始劑之質量除以所取之黏著劑層之質量，算出黏著劑層中之上述光聚合起始劑之質量比率，將其作為第1質量比率。The above-mentioned first mass ratio is calculated according to the following procedure. (1) For the die-cut die-bonding film of each example, take about 0.1 g of the adhesive layer that is not laminated with the die-bonding layer and is more than 1 cm away from the die-bonding layer. (2) After adding the taken adhesive layer to 4 mL of chloroform, shake in a dark place overnight (about 16 hours), thereby extracting the photopolymerization initiator in the adhesive layer from the chloroform. (3) Add 7 mL of methanol to the chloroform solution after the photopolymerization initiator is extracted to re-precipitate the components other than the photopolymerization initiator, and filter the re-precipitated components with a membrane filter to obtain the photopolymerization initiator Dissolving solution (mixed solution of chloroform and methanol). Use this as a measurement sample. (4) Analyze the measurement sample by HPLC, and measure the concentration (unit: μg/mL) of the photopolymerization initiator in the measurement sample. (5) Multiply the concentration of the above-mentioned photopolymerization initiator and the volume of 11 mL of the mixed solvent (mixed solvent of chloroform and methanol) in which the above-mentioned photopolymerization initiator is dissolved to calculate the above-mentioned photopolymerization effect in the measurement sample. The mass of the starting agent (unit: μg). (6) Calculate the mass ratio of the photopolymerization initiator in the adhesive layer by dividing the mass of the photopolymerization initiator in the measurement sample by the mass of the adhesive layer taken, and use it as The first mass ratio.

上述第2質量比率按照以下之步驟求出。再者，以下(1)~(4)均在暗處進行。 (1)從黏著劑層上剝取黏晶層約0.1 g。 (2)將剝取之黏晶層加入至4 mL之氯仿中後，於陰暗處振盪一晚(約16小時)，藉此，於氯仿中提取光聚合起始劑。 (3)於光聚合起始劑提取後之氯仿溶液中加入7 mL之甲醇，使光聚合起始劑以外之成分再沈澱，利用膜濾器濾取再沈澱之成分，得到光聚合起始劑之溶解液(氯仿與甲醇之混合溶液)。將其作為測定試樣。 (4)利用HPLC對上述測定試樣進行分析，測定上述測定試樣中之上述光聚合起始劑之濃度(單位為μg/mL)。 (5)將上述光聚合起始劑之濃度與溶解有上述光聚合起始劑之混合溶劑(氯仿與甲醇之混合溶劑)之容積11 mL相乘，算出上述測定試樣中之上述光聚合起始劑之質量(單位為μg)。 (6)藉由用上述測定試樣中之上述光聚合起始劑之質量除以所取之黏晶層之質量，算出上述黏晶層中之上述光聚合起始劑之質量比率，將其作為第2質量比率。The above-mentioned second mass ratio is calculated according to the following procedure. Furthermore, the following (1) ~ (4) are all carried out in a dark place. (1) Strip about 0.1 g of the sticky crystal layer from the adhesive layer. (2) After adding the stripped sticky crystal layer to 4 mL of chloroform, shake it overnight (about 16 hours) in a dark place to extract the photopolymerization initiator from the chloroform. (3) Add 7 mL of methanol to the chloroform solution after the photopolymerization initiator is extracted to re-precipitate the components other than the photopolymerization initiator, and filter the re-precipitated components with a membrane filter to obtain the photopolymerization initiator Dissolving solution (mixed solution of chloroform and methanol). Use this as a measurement sample. (4) Analyze the measurement sample by HPLC, and measure the concentration (unit: μg/mL) of the photopolymerization initiator in the measurement sample. (5) Multiply the concentration of the above-mentioned photopolymerization initiator and the volume of 11 mL of the mixed solvent (mixed solvent of chloroform and methanol) in which the above-mentioned photopolymerization initiator is dissolved to calculate the above-mentioned photopolymerization effect in the measurement sample. The mass of the starting agent (unit: μg). (6) Calculate the mass ratio of the photopolymerization initiator in the crystal bond layer by dividing the mass of the photopolymerization initiator in the test sample by the mass of the crystal bond layer taken, and divide it As the second mass ratio.

再者，利用HPLC之分析在以下條件下進行。 分析裝置 Waters，Acquity HPLC 測定條件 ・標準溶液：使Omnirad以濃度5.54 μg/mL溶解於氯仿與甲醇之混合溶液中而得到之溶液(第1標準溶液)、使Omnirad以濃度55.4 μg/mL溶解於氯仿與甲醇之混合溶液中而得到之溶液(第2標準溶液)、及使Omnirad以濃度166.2 μg/mL溶解於氯仿與甲醇之混合溶液中而得到之溶液(第3標準溶液)這3種 ・管柱：GL Science，Inertsil(註冊商標)(2.1 mmϕ×10 cm、載體之平均粒徑1.7 μm) ・管柱溫度：40℃ ・管柱流量：0.8 mL/分鐘 ・溶析液組成：超純水/乙腈之梯度條件 ・注射量：10 μL ・檢測器：PDA檢測器 ・檢測波長：260 nmIn addition, the analysis by HPLC was performed under the following conditions. Analysis device Waters, Acquity HPLC Measurement conditions ・Standard solution: a solution obtained by dissolving Omnirad in a mixed solution of chloroform and methanol at a concentration of 5.54 μg/mL (the first standard solution), and dissolving Omnirad in a mixed solution of chloroform and methanol at a concentration of 55.4 μg/mL. The obtained solution (the second standard solution) and the solution (the third standard solution) obtained by dissolving Omnirad in a mixed solution of chloroform and methanol at a concentration of 166.2 μg/mL ・Column: GL Science, Inertsil (registered trademark) (2.1 mmϕ×10 cm, the average particle size of the carrier is 1.7 μm) ・Column temperature: 40℃ ・Column flow rate: 0.8 mL/min ・Eluent composition: gradient conditions of ultrapure water/acetonitrile ・Injection volume: 10 μL ・Detector: PDA detector ・Detection wavelength: 260 nm

將上述第1質量比率之值與上述第2質量比率之值代入下述式(3)中，藉此算出光聚合起始劑之轉移比率。將其結果示於以下之表2。The value of the above-mentioned first mass ratio and the value of the above-mentioned second mass ratio are substituted into the following formula (3) to thereby calculate the transfer ratio of the photopolymerization initiator. The results are shown in Table 2 below.

[數5] 光聚合起始劑之轉移比率(質量%)=-第2質量比率/第1質量比率×100      (3)[Number 5] The transfer ratio of the photopolymerization initiator (mass%) =-the second mass ratio / the first mass ratio × 100 (3)

(剝離力) 對於各例之切晶黏晶膜，測定黏晶層相對於黏著劑層之剝離力。黏晶層相對於黏著劑層之剝離力在使黏著劑層硬化之後測定。 黏晶層相對於黏著劑層之剝離力利用T型剝離試驗來測定。 T型剝離試驗以如下方式進行：從黏晶層將PET隔離膜剝離，於黏晶層上形成露出面，對於在該露出面上貼合有背襯帶(商品名「ELP BT315」、日東電工公司製造)之切晶黏晶膜，使用日東精機製造之商品名「UM-810」(高壓汞燈、60 mW/cm2 )從切晶帶側照射強度150 J/cm2 之紫外線，使黏著劑層硬化之後，切成寬50 mm×長120 mm之尺寸，將其作為測定用樣品，使用拉伸試驗器(例如商品名「TG-1kN」、MinebeaMitsumi Inc製造)在溫度25℃、拉伸速度300 mm/分鐘之條件下進行。 對於如上操作測定之剝離力，示於以下之表2。(Peeling force) For the diced die attach film of each example, the peeling force of the die attach layer relative to the adhesive layer was measured. The peeling force of the adhesive crystal layer relative to the adhesive layer is measured after the adhesive layer is hardened. The peeling force of the die-bonding layer relative to the adhesive layer is measured by a T-type peeling test. The T-type peeling test was performed as follows: the PET separator was peeled from the die-bonding layer to form an exposed surface on the die-bonding layer, and a backing tape (trade name "ELP BT315", Nitto Denko The crystal-cut adhesive film manufactured by the company uses the brand name "UM-810" (high-pressure mercury lamp, 60 mW/cm 2 ) manufactured by Nitto Seiki to irradiate ultraviolet rays with an intensity of 150 J/cm 2 from the side of the crystal-cut tape to make adhesion After the agent layer is hardened, it is cut into a size of 50 mm wide x 120 mm long and used as a sample for measurement. A tensile tester (for example, trade name "TG-1kN", manufactured by MinebeaMitsumi Inc) is used at a temperature of 25°C. It is carried out at a speed of 300 mm/min. The peeling force measured as above is shown in Table 2 below.

(拾取性) 對於被切斷之狀態之帶黏晶層之半導體晶片，評價拾取性。被切斷之狀態之帶黏晶層之半導體晶片以如下方式得到：在藉由半切割形成有分割用之槽(10 mm×10 mm)之12英吋之裸晶圓(直徑300 mm、厚度55 μm)上，於形成有分割用之槽之面上貼附背面研磨帶之後，使用背面研磨機(DISCO公司製造、型號DGP8760)將上述12英吋之裸晶圓從與貼附有上述背面研磨帶之一側處於相反側之面起磨削直至厚度25 μm，得到進行了背面研磨之裸晶圓，於該進行了背面研磨之裸晶圓之與背面研磨帶之貼附面相反之一側貼附各例之切晶黏晶膜之黏晶層，得到帶切晶黏晶膜之裸晶圓，使用晶片分離裝置(商品名「Die separator DDS3200」，DISCO公司製造)對該帶切晶黏晶膜之裸晶圓進行擴展。 再者，使用晶片分離裝置之擴展係在將上述背面研磨帶從裸晶圓剝離之狀態下進行。 於使用了晶片分離裝置之擴展中，進行冷擴展之後，進行常溫擴展。(Pickup) For a semiconductor wafer with a die-bonding layer in a cut state, the pick-up is evaluated. The cut semiconductor wafer with the die-bonding layer is obtained as follows: a 12-inch bare wafer (diameter 300 mm, thickness 55 μm), after attaching the back polishing tape to the surface where the grooves for division are formed, use a back polishing machine (manufactured by DISCO, model DGP8760) to remove the 12-inch bare wafer from and attach the back surface The opposite side of the polishing tape is ground to a thickness of 25 μm to obtain a bare wafer that has undergone back grinding. The bare wafer that has undergone back grinding is the opposite of the attached surface of the back grinding tape. The die attach layer of the die-cut die-bonding film of each case was attached to the side to obtain a bare wafer with die-cut die-bonding film, and the wafer was diced using a chip separation device (trade name "Die separator DDS3200", manufactured by DISCO) The bare wafer of the die-bonding film is expanded. Furthermore, the expansion using the wafer separation device is performed in a state where the back polishing tape is peeled from the bare wafer. In the expansion using the wafer separation device, after performing the cold expansion, the room temperature expansion is performed.

冷擴展以如下方式進行：於貼附於裸晶圓之切晶黏晶膜之黏著劑層上之框貼合區域上，於室溫下貼附直徑12英吋之SUS製環框(DISCO公司製造)之後，將貼附有SUS製環框之裸晶圓安裝於晶片分離裝置，利用該晶片分離裝置之冷擴展單元對切晶黏晶膜之切晶帶進行擴展。冷擴展於擴展溫度-15℃、擴展速度100 mm/秒、擴展量7 mm之條件下進行。 再者，於冷擴展之後，於半導體晶圓被單片化為複數個半導體晶片之同時，黏晶層亦被單片化為相當於半導體晶片之尺寸，得到複數個帶黏晶層之半導體晶片。 常溫擴展係藉由在冷擴展之後使用上述晶片分離裝置之常溫擴展單元對切晶黏晶膜之切晶帶進行擴展來進行。常溫擴展於擴展溫度23±2℃、擴展速度1 mm/秒、擴展量10 mm之條件下進行。 對於常溫擴展後之切晶帶，實施加熱收縮處理。加熱收縮處理於溫度200℃、時間20秒之條件下進行。The cold expansion is carried out in the following manner: on the frame bonding area on the adhesive layer of the die-cut die film attached to the bare wafer, a 12-inch diameter SUS ring frame (DISCO Company) is attached at room temperature. After manufacturing), the bare wafer attached with the SUS ring frame is mounted on the chip separation device, and the dicing tape of the dicing die film is expanded by the cold expansion unit of the chip separation device. The cold expansion is carried out under the conditions of expansion temperature -15℃, expansion speed 100 mm/sec, and expansion amount 7 mm. Furthermore, after cold expansion, while the semiconductor wafer is singulated into a plurality of semiconductor chips, the die bonding layer is also singulated into a size equivalent to the semiconductor chip to obtain a plurality of semiconductor wafers with a die bonding layer . The room temperature expansion is carried out by using the room temperature expansion unit of the above-mentioned wafer separation device to expand the dicing tape of the dicing die film after the cold expansion. Normal temperature expansion is carried out under the conditions of expansion temperature 23±2℃, expansion speed 1 mm/sec, and expansion amount 10 mm. The dicing tape after expansion at room temperature is subjected to heat shrinkage treatment. The heat shrinkage treatment is performed under the conditions of a temperature of 200°C and a time of 20 seconds.

使切晶帶加熱收縮之後，使用具有拾取機構之裝置(商品名「Die bonder SPA-300」、新川製造)，進行經單片化之帶黏晶層之半導體晶片之拾取試驗。於具有上述拾取機構之裝置中，基於銷構件之頂起速度設為1 mm/秒、頂起量設為2000 μm。 上述拾取試驗於使用日東精機製造之商品名「UM-810」(高壓汞燈、60 mW/cm2 )從切晶帶側照射強度150 J/cm2 之紫外線，使黏著劑層硬化之後進行。 拾取試驗對5個帶黏晶層之半導體晶片進行，對於拾取性，按照以下之基準判斷。 ◎ 5個帶黏晶層之半導體晶片全部能夠拾取。 〇 5個帶黏晶層之半導體晶片中能夠拾取3個或4個。 × 5個帶黏晶層之半導體晶片全部無法拾取。After heating and shrinking the dicing tape, a device with a pick-up mechanism (trade name "Die bonder SPA-300", manufactured by Shinkawa) was used to conduct a pick-up test of the singulated semiconductor wafer with a bond layer. In the device with the above-mentioned pickup mechanism, the jacking speed based on the pin member is set to 1 mm/sec, and the jacking amount is set to 2000 μm. The above-mentioned pick-up test was carried out after irradiating 150 J/cm 2 of ultraviolet rays from the side of the dicing tape with the brand name "UM-810" (high pressure mercury lamp, 60 mW/cm 2 ) manufactured by Nitto Seiki to harden the adhesive layer. The pick-up test was performed on 5 semiconductor wafers with a bonding layer, and the pick-up performance was judged according to the following criteria. ◎ All 5 semiconductor wafers with adhesive layer can be picked up. 〇5 semiconductor wafers with a bonding layer can pick up 3 or 4. × All 5 semiconductor wafers with adhesive layers cannot be picked up.

[表2]    實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 比較例1 黏著劑層組成 丙烯酸系聚合物(質量份) 100 100 100 100 100 100 100 光聚合起始劑(質量份) 2 2 2 2 2 2 2 交聯劑(質量份) 0.8 0.8 0.8 0.8 0.8 0.8 0.8 黏著賦予劑(質量份) - - - - - - - 抗氧化劑(質量份) 0.01 0.01 0.01 0.01 0.01 0.01 0.01 溶膠成分之質量比率(wt%) 29 27 23 22 23 20 32 峰1之峰頂分子量 17998 21672 9588 14545 15878 15981 33104 峰1之重量平均分子量Mw 24882 24764 15451 23897 28761 26542 34548 峰1之數平均分子量Mn 14894 17324 8821 10587 12395 12491 26876 Mw/Mn 1.67 1.43 1.75 2,26 2.32 2.12 1.29 光聚合起始劑之轉移比率(wt%) -18 -22 -33 -12 -21 -12 -40 輻射線照射後之黏著力(N/20 mm) 0.14 0.15 0.12 0.07 0.07 0.06 0.18 拾取性 〇 〇 〇 ◎ ◎ ◎ × [Table 2] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Comparative example 1 Adhesive layer composition Acrylic polymer (parts by mass) 100 100 100 100 100 100 100 Photopolymerization initiator (parts by mass) 2 2 2 2 2 2 2 Crosslinking agent (parts by mass) 0.8 0.8 0.8 0.8 0.8 0.8 0.8 Adhesive imparting agent (parts by mass) - - - - - - - Antioxidant (parts by mass) 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Mass ratio of sol components (wt%) 29 27 twenty three twenty two twenty three 20 32 Peak top molecular weight of peak 1 17998 21672 9588 14545 15878 15981 33104 Peak 1 weight average molecular weight Mw 24882 24764 15451 23897 28761 26542 34548 Peak 1 number average molecular weight Mn 14,894 17324 8821 10587 12395 12491 26876 Mw/Mn 1.67 1.43 1.75 2,26 2.32 2.12 1.29 Transfer ratio of photopolymerization initiator (wt%) -18 -twenty two -33 -12 -twenty one -12 -40 Adhesion after radiation (N/20 mm) 0.14 0.15 0.12 0.07 0.07 0.06 0.18 Pickup 〇 〇 〇 ◎ ◎ ◎ ×

由表2可知，實施例1~6之切晶黏晶膜與比較例1之切晶黏晶膜相比，光聚合起始劑從黏著劑層向黏晶層轉移之比率低，又，輻射線照射後之黏著力亦充分降低。 進而可知，關於拾取性亦是如此，實施例1~6之切晶黏晶膜中為〇或◎，良好，而與此相對，比較例1之切晶黏晶膜中為×，不良。It can be seen from Table 2 that compared with the diced die-cut film of Examples 1 to 6, the transfer rate of the photopolymerization initiator from the adhesive layer to the die-cut film is lower than that of Comparative Example 1. In addition, radiation The adhesive force after irradiation is also fully reduced. Furthermore, it can be seen that the same is true for the pick-up property. The diced die-cutting films of Examples 1 to 6 are ○ or ⊚, which is good, while the die-cutting die-cutting films of Comparative Example 1 are X, which is poor.

1:基材層 2:黏著劑層 3:黏晶層 10:切晶帶 20:切晶黏晶膜 G:背面研磨帶 H:保持件 J:吸附夾具 P:銷構件 R:切晶環 T:晶圓加工用帶 U:頂起構件 W:半導體晶圓1: Substrate layer 2: Adhesive layer 3: Sticky crystal layer 10: Cut crystal belt 20: Slicing and sticking film G: Back grinding tape H: Holder J: Adsorption fixture P: Pin member R: Slicing ring T: Tape for wafer processing U: Jack up member W: semiconductor wafer

圖1係示出本發明之一個實施方式之切晶黏晶膜之構成之剖視圖。 圖2A係模式性地示出半導體積體電路之製造方法中之半切割加工之情況之剖視圖。 圖2B係模式性地示出半導體積體電路之製造方法中之半切割加工之情況之剖視圖。 圖2C係模式性地示出半導體積體電路之製造方法中之背面研磨加工之情況之剖視圖。 圖2D係模式性地示出半導體積體電路之製造方法中之背面研磨加工之情況之剖視圖。 圖3A係模式性地示出半導體積體電路之製造方法中之安裝步驟之情況之剖視圖。 圖3B係模式性地示出半導體積體電路之製造方法中之安裝步驟之情況之剖視圖。 圖4A係模式性地示出半導體積體電路之製造方法中之低溫下之擴展步驟之情況之剖視圖。 圖4B係模式性地示出半導體積體電路之製造方法中之低溫下之擴展步驟之情況之剖視圖。 圖4C係模式性地示出半導體積體電路之製造方法中之低溫下之擴展步驟之情況之剖視圖。 圖5A係模式性地示出半導體積體電路之製造方法中之常溫下之擴展步驟之情況之剖視圖。 圖5B係模式性地示出半導體積體電路之製造方法中之常溫下之擴展步驟之情況之剖視圖。 圖6係模式性地示出半導體積體電路之製造方法中之切口維持步驟之情況之剖視圖。 圖7係模式性地示出半導體積體電路之製造方法中之拾取步驟之情況之剖視圖。FIG. 1 is a cross-sectional view showing the structure of a dicing die bond film according to an embodiment of the present invention. FIG. 2A is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. FIG. 2B is a cross-sectional view schematically showing the half-cutting process in the manufacturing method of the semiconductor integrated circuit. FIG. 2C is a cross-sectional view schematically showing the back grinding process in the manufacturing method of the semiconductor integrated circuit. FIG. 2D is a cross-sectional view schematically showing the back grinding process in the manufacturing method of the semiconductor integrated circuit. FIG. 3A is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. FIG. 3B is a cross-sectional view schematically showing the state of the mounting step in the manufacturing method of the semiconductor integrated circuit. 4A is a cross-sectional view schematically showing the expansion step at low temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 4B is a cross-sectional view schematically showing the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 4C is a cross-sectional view schematically showing the expansion step at a low temperature in the manufacturing method of the semiconductor integrated circuit. FIG. 5A is a cross-sectional view schematically showing an expansion step at room temperature in the manufacturing method of a semiconductor integrated circuit. FIG. 5B is a cross-sectional view schematically showing an expansion step at room temperature in the manufacturing method of a semiconductor integrated circuit. FIG. 6 is a cross-sectional view schematically showing the state of the cut maintenance step in the manufacturing method of the semiconductor integrated circuit. FIG. 7 is a cross-sectional view schematically showing the pickup step in the manufacturing method of the semiconductor integrated circuit.

1:基材層 1: Substrate layer

2:黏著劑層 2: Adhesive layer

3:黏晶層 3: Sticky crystal layer

10:切晶帶 10: Cut crystal belt

20:切晶黏晶膜 20: slicing and sticking film

Claims (4)

一種切晶黏晶膜，其具備： 於基材層上積層有黏著劑層之切晶帶，及 於上述切晶帶之黏著劑層上積層之黏晶層； 上述黏著劑層包含黏著劑及光聚合起始劑， 於對硬化前之上述黏著劑層進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之重量平均分子量Mw相對於在最高分子量側出現之峰之數平均分子量Mn之比、即多分散度Mw/Mn為1.3以上。A diced chip adhesive film, which has: Laminating a dicing tape with an adhesive layer on the substrate layer, and A die-bonding layer laminated on the adhesive layer of the above-mentioned die-cutting tape; The adhesive layer includes an adhesive and a photopolymerization initiator, In the molecular weight distribution curve obtained by GPC measurement of the adhesive layer before curing, the ratio of the weight average molecular weight Mw of the peak appearing on the highest molecular weight side to the number average molecular weight Mn of the peak appearing on the highest molecular weight side, that is, polydispersity The degree Mw/Mn is 1.3 or more. 如請求項1之切晶黏晶膜，其中 於對硬化前之上述黏著劑層進行GPC測定而得到之分子量分佈曲線中，於最高分子量側出現之峰之峰頂分子量之值為33,000以下。Such as the diced wafer of claim 1, where In the molecular weight distribution curve obtained by GPC measurement of the adhesive layer before curing, the peak top molecular weight value of the peak appearing on the highest molecular weight side is 33,000 or less. 如請求項1或2之切晶黏晶膜，其中 硬化前之上述黏著劑層包含未達32質量%之溶膠成分。Such as the diced wafer of claim 1 or 2, where The adhesive layer before curing contains less than 32% by mass of the sol component. 如請求項1或2之切晶黏晶膜，其中 於上述黏著劑層之硬化後，上述黏晶層相對於上述黏著劑層之剝離力未達0.18 N/20 mm。Such as the diced wafer of claim 1 or 2, where After the adhesive layer is hardened, the peeling force of the crystal bonding layer relative to the adhesive layer does not reach 0.18 N/20 mm.
TW110112516A 2020-04-13 2021-04-07 Dicing die-bonding film TW202142659A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-071684 2020-04-13
JP2020071684A JP7510270B2 (en) 2020-04-13 2020-04-13 Dicing die bond film

Publications (1)

Publication Number Publication Date
TW202142659A true TW202142659A (en) 2021-11-16

Family

ID=78079962

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110112516A TW202142659A (en) 2020-04-13 2021-04-07 Dicing die-bonding film

Country Status (4)

Country Link
JP (1) JP7510270B2 (en)
KR (1) KR20210127093A (en)
CN (1) CN113539926A (en)
TW (1) TW202142659A (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4430085B2 (en) 2007-03-01 2010-03-10 日東電工株式会社 Dicing die bond film
WO2016151911A1 (en) 2015-03-23 2016-09-29 リンテック株式会社 Semiconductor processing sheet and method for manufacturing semiconductor device
JP2017203149A (en) 2017-02-28 2017-11-16 株式会社クラレ Resin composition containing acrylic block copolymer
JP6995505B2 (en) 2017-06-22 2022-01-14 日東電工株式会社 Dicing die bond film
WO2019044623A1 (en) 2017-08-29 2019-03-07 積水化学工業株式会社 Adhesive composition, adhesive tape, and method for protecting semiconductor device
JP7059553B2 (en) 2017-10-04 2022-04-26 昭和電工マテリアルズ株式会社 Adhesive tape for stealth dicing, dicing die bonding integrated tape, and method for manufacturing semiconductor devices

Also Published As

Publication number Publication date
JP2021168363A (en) 2021-10-21
CN113539926A (en) 2021-10-22
KR20210127093A (en) 2021-10-21
JP7510270B2 (en) 2024-07-03

Similar Documents

Publication Publication Date Title
KR101330128B1 (en) Adhesive composition, dicing tape for semiconductor wafer and method and device for producing the same
EP3125276A1 (en) Base film for dicing sheet, dicing sheet including said base film, and process for producing said base film
WO2015146856A1 (en) Adhesive tape for semiconductor wafer processing and method for processing semiconductor wafer
EP3073516A1 (en) Dicing-sheet base film, dicing sheet containing said base film, and method for manufacturing said base film
TWI759345B (en) Adhesive sheet for stealth dicing and manufacturing method of semiconductor device
JP7430056B2 (en) dicing die bond film
TW202142659A (en) Dicing die-bonding film
TWI827719B (en) Cutting discs for plasma cutting
TWI838536B (en) Dicing tape and dicing die-bonding film
JP7523956B2 (en) Dicing tape and dicing die bond film
TW202132500A (en) Dicing tape and dicing die-bonding film
JP6983200B2 (en) Die bond film and dicing die bond film
TW202111056A (en) Dicing tape and dicing die-bonding film
TW202132499A (en) Dicing tape and dicing die-bonding film
TWI846891B (en) Dicing tape and dicing die-bonding film
JP7430039B2 (en) Dicing tape and dicing die bond film
EP3073515A1 (en) Dicing-sheet base film and base-film manufacturing method
JP2024094818A (en) Dicing Tape
TW202231487A (en) Semiconductor wafer mounting substrate, dicing tape, and dicing die bond film
TW202338037A (en) Dicing die bonding film
KR20190038121A (en) Semiconductor wafer dicing film and dicing die bonding film