TW202134346A - 樹脂組成物及附樹脂銅箔 - Google Patents

樹脂組成物及附樹脂銅箔 Download PDF

Info

Publication number
TW202134346A
TW202134346A TW109138175A TW109138175A TW202134346A TW 202134346 A TW202134346 A TW 202134346A TW 109138175 A TW109138175 A TW 109138175A TW 109138175 A TW109138175 A TW 109138175A TW 202134346 A TW202134346 A TW 202134346A
Authority
TW
Taiwan
Prior art keywords
component
weight
resin
copper foil
parts
Prior art date
Application number
TW109138175A
Other languages
English (en)
Inventor
大澤和弘
小川国春
牧野�
Original Assignee
日商三井金屬鑛業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商三井金屬鑛業股份有限公司 filed Critical 日商三井金屬鑛業股份有限公司
Publication of TW202134346A publication Critical patent/TW202134346A/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/02Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/02Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
    • C08L53/025Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes modified
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/48Polymers modified by chemical after-treatment
    • C08G65/485Polyphenylene oxides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06Hydrocarbons
    • C08F212/08Styrene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F236/00Copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds
    • C08F236/02Copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds
    • C08F236/04Copolymers of compounds having one or more unsaturated aliphatic radicals, at least one having two or more carbon-to-carbon double bonds the radical having only two carbon-to-carbon double bonds conjugated
    • C08F236/06Butadiene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F255/00Macromolecular compounds obtained by polymerising monomers on to polymers of hydrocarbons as defined in group C08F10/00
    • C08F255/08Macromolecular compounds obtained by polymerising monomers on to polymers of hydrocarbons as defined in group C08F10/00 on to polymers of olefins having four or more carbon atoms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F279/00Macromolecular compounds obtained by polymerising monomers on to polymers of monomers having two or more carbon-to-carbon double bonds as defined in group C08F36/00
    • C08F279/02Macromolecular compounds obtained by polymerising monomers on to polymers of monomers having two or more carbon-to-carbon double bonds as defined in group C08F36/00 on to polymers of conjugated dienes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/04Polymers provided for in subclasses C08C or C08F
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/01Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013Fillers, pigments or reinforcing additives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/01Hydrocarbons
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/54Silicon-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/54Silicon-containing compounds
    • C08K5/541Silicon-containing compounds containing oxygen
    • C08K5/5415Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C08K5/5419Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L51/00Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L51/04Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to rubbers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L51/00Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L51/08Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • C08L71/08Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08L71/10Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C08L71/12Polyphenylene oxides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • C08L71/08Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08L71/10Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C08L71/12Polyphenylene oxides
    • C08L71/126Polyphenylene oxides modified by chemical after-treatment
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/204Di-electric
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/30Properties of the layers or laminate having particular thermal properties
    • B32B2307/306Resistant to heat
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00Metals, their alloys or their compounds
    • B32B2311/12Copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/38Boron-containing compounds
    • C08K2003/382Boron-containing compounds and nitrogen
    • C08K2003/385Binary compounds of nitrogen with boron
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/002Physical properties
    • C08K2201/003Additives being defined by their diameter
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04Homopolymers or copolymers of esters
    • C08L33/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10Homopolymers or copolymers of methacrylic acid esters
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0183Dielectric layers
    • H05K2201/0195Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0358Resin coated copper [RCC]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)

Abstract

本發明提供呈現優異的介電特性、對低粗糙度表面的高密著性、耐熱性及優異的耐水性之樹脂組成物。該樹脂組成物包含(a)一分子中具有聚苯醚骨架及丁二烯骨架,且具有選自由乙烯基、苯乙烯基、烯丙基、乙炔基及(甲基)丙烯醯基所成之群中之至少1種的聚合物,與(b)含有苯乙烯丁二烯骨架之聚合物及(c)含有環烯烴骨架之聚合物之至少一者,相對於成分(a)、成分(b)及成分(c)之合計含量100重量份,成分(a)之含量為15重量份以上60重量份以下,且成分(b)及成分(c)之合計含量為40重量份以上85重量份以下。

Description

樹脂組成物及附樹脂銅箔
本發明有關樹脂組成物及附樹脂銅箔。
印刷配線板已廣泛使用於攜帶用電子機器等之電子機器。尤其隨著近幾年來之攜帶用電子機器等之高機能化而進展信號之高頻化,而要求是於此等高頻用途之印刷配線板。該高頻用印刷配線板為了不使高頻信號之品質劣化而可傳送,期望傳送損失較低者。印刷配線板係具備經加工為配線圖型之銅箔與絕緣樹脂基材者,但傳送損失主要包含起因於銅箔之導體損失與起因於絕緣樹脂基材之介電體損失。因此,適用於高頻用途之附樹脂層之銅箔中,期望抑制起因於樹脂層之介電體損失。為此,對樹脂層要求優異之介電特性,尤其要求低的介電正切。
另一方面,介電特性等優異之各種樹脂組成物已提案用於印刷配線板等之用途。例如專利文獻1(日本特開2008-181909號公報)中,揭示包含熱硬化性樹脂基材、玻璃纖維布、無機粒子填充料、金屬性輔劑(metallic coagents)及溴難燃劑之電路基板組成物。該熱硬化性樹脂基材包含(a)高分子量聚丁二烯熱硬化性樹脂與低分子量聚丁二烯熱硬化性樹脂之混合物,(b)兩個以上之乙烯基雙鍵之環烯烴化合物,及/或丙烯酸、丙烯腈及丁二烯之高分子聚合物。又,專利文獻2(日本特開2005-502192號公報)係有關形成低介電常數及低熱發散常數之電路構件之方法,係於銅箔與電路基板材之間配置接著促進彈性體層,將銅箔、接著促進彈性體層及電路基板材予以積層而製作電路構件。又,作為彈性體之例,列舉為乙烯-丙烯彈性體、乙烯-丙烯-二烯單體彈性體、苯乙烯-丁二烯彈性體、苯乙烯丁二烯嵌段共聚物等之多種彈性體或共聚物。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2008-181909號公報 [專利文獻2]日本特開2005-502192號公報
本發明人等對作為介電特性等優異之樹脂組成物,而檢討了貼附於預浸片等之基材者作為底塗層(接著層)。因此,該樹脂組成物之層以附樹脂銅箔之形態提供,該銅箔使用作為電路形成用銅箔。有利於上述用途之樹脂組成物,被期望不僅具有優異之介電特性,且對於低粗度表面(例如低粗度銅箔之表面)之密著性亦優異,具有耐熱性,具有優異耐水性之各種特性。尤其,於有利高頻之電路形成中,低粗度銅箔係基於傳送損失減低之觀點而被期望,此種銅箔為低粗度故而有與樹脂組成物之密著性變低之傾向。因此,如何實現兼具優異之介電特性與對於低粗度銅箔之高密著性並且確保其他諸特性成為問題。
本發明人等如今發現藉由將一分子中具有聚苯醚骨架及丁二烯骨架之特定聚合物與含有苯乙烯丁二烯骨架之聚合物及/或含有環烯烴之聚合物以特定調配比摻合,可提供呈現優異介電特性(例如於10GHz之低介電正切)、對低粗度表面(例如低粗度銅箔之表面)之高密著性、耐熱性及優異耐水性(低吸水率)之樹脂組成物。
因此,本發明之目的在於提供呈現優異的介電特性、對低粗糙度表面的高密著性、耐熱性及優異的耐水性之樹脂組成物。
依據本發明之一態樣,提供一種樹脂組成物,其包含下述成分: (a)一分子中具有聚苯醚骨架及丁二烯骨架,且具有選自由乙烯基、苯乙烯基、烯丙基、乙炔基及(甲基)丙烯醯基所成之群中之至少1種的聚合物,與 (b)含有苯乙烯丁二烯骨架之聚合物及(c)含有環烯烴骨架之聚合物之至少一者, 相對於前述成分(a)、前述成分(b)及前述成分(c)之合計含量100重量份,前述成分(a)之含量為15重量份以上60重量份以下,且前述成分(b)及前述成分(c)之合計含量為40重量份以上85重量份以下。
依據本發明之一態樣,提供一種附樹脂銅箔,其包含銅箔與設於前述銅箔之至少一面之由前述樹脂組成物所構成的樹脂層。
樹脂組成物
本發明之樹脂組成物包含下述成分:(a)一分子中具有聚苯醚骨架及丁二烯骨架,且具有選自由乙烯基、苯乙烯基、烯丙基、乙炔基及(甲基)丙烯醯基所成之群中之至少1種的聚合物(以下稱為成分(a))。該樹脂組成物進而包含(b)含有苯乙烯丁二烯骨架之聚合物(以下稱為成分(b))及(c)含有環烯烴骨架之聚合物(以下稱為成分(c))之至少一者。相對於成分(a)、成分(b)及成分(c)之合計含量100重量份,成分(a)之含量為15重量份以上60重量份以下,且成分(b)及成分(c)之合計含量為40重量份以上85重量份以下。藉由如此將一分子中具有聚苯醚骨架及丁二烯骨架之特定聚合物與含有苯乙烯丁二烯骨架之聚合物及/或含有環烯烴之聚合物以特定調配比摻合,可提供呈現優異介電特性(例如於10GHz之低介電正切)、對低粗度表面(例如低粗度銅箔之表面)之高密著性、耐熱性及優異耐水性(低吸水率)之樹脂組成物。又,該樹脂組成物亦具有良好加工性,例如不易龜裂,且呈現良好觸黏性者。
如前述,本發明人等對作為介電特性等優異之樹脂組成物,而檢討了貼附於預浸片等之基材者作為底塗層(接著層)。因此,該樹脂組成物之層以附樹脂銅箔之形態提供,該銅箔使用作為電路形成用銅箔。有利於上述用途之樹脂組成物,被期望不僅具有優異之介電特性,且對於低粗度表面(例如低粗度銅箔之表面)之密著性亦優異,具有耐熱性,具有優異耐水性之各種特性。尤其,於有利高頻之電路形成中,低粗度銅箔係基於傳送損失減低之觀點而被期望,此種銅箔為低粗度故而有與樹脂組成物之密著性變低之傾向。亦即,具有低粗度表面之材料(例如低粗鍍銅箔)使用樹脂組成物之底塗層(接著層)(例如以附樹脂銅箔之形式)與基材等之被接著體進行接著之情況,大多情況於成為更平坦界面之低粗度表面與樹脂組成物層之界面產生剝離。此認為係因為界面之凹凸極小(存在界面之區域的厚度極薄),且因為拉伸應力二維地集中於密著強度最弱之平坦界面之故。
若該拉伸應力並非於二維界面被接收,而可更被三維之樹脂組成物層(以下稱樹脂層)接收(亦即應力分散至樹脂層內部),則有可防止於界面之剝離,提高密著強度之可能性。作為提高密著強度之策略考慮為降低接收應力的樹脂層之彈性模數、提高樹脂層之伸長率、增厚樹脂層厚度、或於樹脂層內部形成填料等不同之相。然而,降低彈性率或提高伸長率等之於樹脂層具有柔軟性之方法,雖可提高附樹脂銅箔於常溫下之剝離強度(密著性),但有依存於具有柔軟性之樹脂而樹脂層之耐熱性等的熱特性容易劣化之傾向。且,增厚樹脂層厚度之情況,由於犧牲了樹脂之薄度,故基板積層時之基板厚度變厚。又,於樹脂層內形成填料等不同之相之情況,需要確保相界面之密著性、相界面之比表面積之最適化、製造步驟上之相的分散性等之相的界面控制,只要未達成該等複雜相之界面控制,則無法獲得剝離強度之提高效果。該方面,若依據本發明之樹脂組成物,則可有利地消解上述問題。其原因認為係藉由以特定調配比摻合聚合物成分(a)、聚合物成分(b)及/或(c),而於樹脂組成物中作出聚合物合金所成之連續聚合物彼此之界面(經微控制之相分離構造)之故。亦即,認為於附樹脂銅箔等之形態中於剝離強度試驗等施加拉伸應力之際,首先於引起銅箔層與樹脂組成物層之界面剝離之前,樹脂層變形,藉由通過聚合物彼此之連續界面而將拉伸應力遍及樹脂層厚度方向全域分散,而可由樹脂層全體吸收拉伸應力。亦即,依據本發明之樹脂組成物,由於可形成不僅具有優異介電特性亦具有耐熱性或吸水性,同時可三維地接收拉伸應力之樹脂層,故認為可實現對於低粗度表面的高密著性(高剝離強度)。因此,依據本發明,提供呈現優異的介電特性、對低粗糙度表面的高密著性、耐熱性及優異的耐水性之樹脂組成物。
具體而言,本發明之樹脂組成物較佳硬化後於頻率10GHz下之介電正切未達0.0030,更佳未達0.0020,又更佳未達0.0015。介電正切較低較佳,下限值並未特別限定,但典型上為0.0001以上。又,本發明之樹脂組物較佳硬化後依據JIS C 6481-1996測定之吸水率未達0.5%,更佳未達0.3%,又更佳未達0.1%。吸水率越低越佳,下限值並未特別限定,但典型上為0.01%以上。
本發明之樹脂組成物包含成分(a)。成分(a)係主要有助於熱硬化性或耐熱性之成分,係一分子中具有聚苯醚骨架及丁二烯骨架且具有特定之反應性官能基之聚合物。特定之反應性官能基係選自由乙烯基、苯乙烯基、烯丙基、乙炔基及(甲基)丙烯醯基所成之群中之至少1種,只要根據反應性具有何種程度而選擇最適者即可,但基於廣泛利用性之觀點,較佳為乙烯基。又,聚苯醚骨架與丁二烯骨架可為任何聚合形態,但基於耐熱性之觀點,較佳經由酯縮合而聚合。成分(a)中所佔之聚苯醚骨架之比例並未特別限定,但基於耐熱性之觀點,較佳為高比例,具體而言為30重量%以上80重量%以下,更佳為50重量%以上70重量%以下。成分(a)中所佔之丁二烯骨架中之乙烯基可採用之形態有1,2-乙烯基與1,4-乙烯基。基於耐熱性或耐候性之觀點,較佳極力減少1,4-乙烯基,極限上亦可進行氫化(氫化處理)。1,4-乙烯基相對於1,2-乙烯基與1,4-乙烯基之合計的莫耳比率較佳為30%以下,更佳為20%以下,又更佳為15%以下。作為成分(a)之較佳例,舉例為日本化藥股份有限公司製之BX-660T。
成分(a)之含量,相對於成分(a)、成分(b)及成分(c)之合計含量100重量份,為15重量份以上60重量份以下,較佳為20重量份以上55重量份以下,更佳為20重量份以上40重量份以下,又更佳為25重量份以上35重量份以下。藉由為該等範圍內,可更有效實現上述諸特性。
本發明之樹脂組成物進而包含成分(b)及成分(c)之至少一者。成分(b)主要係有助於剝離強度及介電特性之成分,係包含苯乙烯丁二烯骨架之聚合物(典型上為苯乙烯及丁二烯之嵌段共聚物)。該聚合物可為氫化及非氫化之任一者,但基於耐候性之觀點,較佳為氫化。基於取得介電特性與柔軟性及剝離強度之均衡之觀點,成分(b)係苯乙烯/乙烯・丁烯比(S/EB比)較佳為10/90至60/40之範圍,更佳為20/80至40/60,又更佳為25/75至35/65之範圍。作為成分(b)之較佳例舉例為旭化成股份有限公司製之TUFLEC(R) MP-10。另一方面,成分(c)主要係有助於介電特性與耐熱性或熱後剝離之成分,係包含環烯烴骨架之聚合物,可使用一般稱為環烯烴聚合物(COP)者。作為成分(c)之較佳例舉例為日本ZEON股份有限公司製之L-3PS。
成分(b)及成分(c)之合計含量,相對於成分(a)、成分(b)及成分(c)之合計含量100重量份,為40重量份以上85重量份以下,較佳為45重量份以上80重量份以下,更佳為60重量份以上80重量份以下,又更佳為65重量份以上75重量份以下。藉由為該等範圍內,可更有效實現上述諸特性。
本發明之樹脂組成物包含成分(b)及成分(c)之兩者。該情況下,成分(b)相對於成分(c)之重量比b/c較佳為0.8以上10.0以下,更佳為1.0以上8.0以下,又更佳為1.2以上6.0以下,特佳為1.2以上4.5以下。藉由併用成分(b)及成分(c),尤其藉由將該等之重量比b/c設為上述範圍內,可更提高對於低粗度表面(例如低粗度銅箔表面)之密著性。其原因認為係成分(b)之苯乙烯丁二烯骨架及成分(c)之環烯烴骨架係完全不同之骨架,係一般不易混合者,但以本發明之樹脂組成物,可於樹脂層中更有效作出由聚合物合金而微控制之相分離構造之故。亦即,於附樹脂銅箔等之形態中,於剝離強度試驗等而施加拉伸應力之際,通過成分(b)與成分(c)之微細且連續之界面而將拉伸應力更高度分散於樹脂層厚度方向全域,而可藉由樹脂層全體更有效吸收拉伸應力之故。如此可以更有效之形態實現可三維地接收拉伸應力之樹脂層。
本發明之樹脂組成物較佳進而包含矽烷偶合劑作為成分(d)。矽烷偶合劑有助於密著性。作為矽烷偶合劑,可使用胺基官能性矽烷偶合劑、丙烯酸官能性矽烷偶合劑、甲基丙烯酸官能性矽烷偶合劑、環氧官能性矽烷偶合劑、烯烴官能性矽烷偶合劑、巰基官能性矽烷偶合劑、乙烯基官能性矽烷偶合劑等之各種矽烷偶合劑。尤其,較佳為由分子中具有合計3個甲氧基及/或乙氧基之矽烷化合物所成之矽烷偶合劑,作為此等矽烷偶合劑之具體例舉例為8-甲基丙烯醯氧基辛基三甲氧基矽烷、8-縮水甘油氧基辛基三甲氧基矽烷、N-2-(胺基乙基)-8-胺基辛基三甲氧基矽烷、對-苯乙烯基三甲氧基矽烷、7-辛烯基三甲氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷等。成分(d),亦即矽烷偶合劑之含量,相對於成分(a)、成分(b)及成分(c)之合計含量100重量份,較佳為0.10重量份以上10.0重量份以下,但基於抑制因添加偶合劑所致之對介電特性等之不良影響之觀點,更佳為0.10重量份以上5.0重量份以下,又更佳為0.10重量份以上3.0重量份以下,特佳為0.10重量份以上2.0重量份以下,最佳為0.1重量份以上1.5重量份以下。
本發明之樹脂組成物較佳進而包含無機填料作為成分(e)。作為無機填料之例舉例為氧化矽、滑石、氮化硼(BN)等。無機填料若為可分散於樹脂組成物中,則未特別限定,但基於分散性及介電特性之觀點,較佳為氧化矽。無機填料之平均粒徑D50較佳為0.1~3.0μm,更佳為0.3~2.0μm。若為此等範圍內之平均粒徑D50,則因界面(亦即比表面積)變少故可減低對介電特性之不良影響,同時帶來層間絕緣性之提高或樹脂層中無粗大粒子等之作為電子材料的較佳諸特性。無機填料可為粉碎粒子、球狀粒子、芯殼粒子、中空粒子等之任一形態。成分(e)亦即無機填料之含量,相對於成分(a)、成分(b)及成分(c)之合計含量100重量份,較佳為50重量份以上400重量份以下,更佳為50重量份以上250重量份以下,又更佳為50重量份以上200重量份以下,特佳為50重量份以上150重量份以下。
附樹脂銅箔 本發明之樹脂組成物較佳作為附樹脂銅箔使用。亦即依據本發明之較佳態樣,提供附樹脂銅箔,其包含銅箔與設於該銅箔之至少一面之由樹脂組成物所構成的樹脂層。典型上樹脂組成物為樹脂層之形態,係將樹脂組成物於銅箔上以乾燥後之樹脂層厚度成為特定值之方式使用凹版塗佈方式予以塗佈並乾燥,而獲得附樹脂銅箔。關於此塗佈方式可為任意,但除了凹版塗佈方式以外,可採用模嘴塗佈方式、刮刀塗佈方式等。此外,亦可使用刮板或棒塗佈器等進行塗佈。
如前述,本發明之樹脂組成物呈現優異的介電特性(例如於10GHz之低介電正切)、對低粗糙度表面(例如低粗度銅箔之表面)的高密著性、耐熱性及優異的耐水性(低吸水率)。因此,附樹脂銅箔具有由此等樹脂組成物所帶來之各種優點。例如附樹脂銅箔於樹脂層經硬化之狀態下,依據JIS C 6481-1996測定之樹脂層與銅箔間之剝離強度(亦即常態剝離強度)之下限值較佳為0.6kgf/cm以上,更佳為0.7kgf/cm以上,特佳為0.8kgf/cm以上。剝離強度越高越佳,其上限值並未特別限定,但典型上為2.0kgf/cm以下。
又,附樹脂銅箔即使加熱後亦呈現高的剝離強度。具體而言,附樹脂銅箔於樹脂層硬化且於260℃加熱60分鐘後之依據JIS C 6481-1996測定之樹脂層與銅箔間之剝離強度(亦即加熱後剝離強度)之下限值較佳為0.5kgf/cm以上,更佳為0.6kgf/cm以上,又更佳為0.7 kgf/cm以上,特佳為0.8kgf/cm以上。加熱後之剝離強度越高越佳,其上限值並未特別限定,但典型上為2.0kgf/cm以下。
樹脂層厚度並未特別限定,但為了確保剝離強度則較厚較佳,由於積層基板厚度較薄較佳,故存在有適當厚度。樹脂層厚度較佳為1μm以上50μm以下,更佳為2μm以上20μm以下,特佳為3μm以上10μm以下,最佳為3 μm以上5μm以下。藉由設為該等範圍內,可更有效實現上述本發明之諸特性,容易藉由樹脂組成物之塗佈而形成樹脂層。
銅箔可為電解銅箔或壓延製箔後之直接金屬箔(所謂生箔),亦可為於至少一面上實施表面處理之表面處理箔之形態。表面處理係為了提高乃至於賦與金屬箔表面之任何性質(例如防鏽性、耐濕性、耐藥品性、耐酸性、耐熱性及與基板之密著性)而進行之各種表面處理。表面處理可對金屬箔單面進行,亦可對金屬箔之兩面進行。作為對銅箔進行之表面處理之例舉例為防鏽處理、矽烷處理、粗化處理、障壁形成處理等。
銅箔之樹脂層側的表面之依據JIS B0601-2001測定之十點平均粗糙度Rzjis較佳為0.5μm以下,更佳為0.4μm以下,又更佳為0.3μm以下,特佳為0.2μm以下。若為此等範圍內,則可期望地減低高頻用途下之傳送損失。亦即,可減低因越為高頻越顯著顯現之銅箔的表皮效果而增大之起因於銅箔之導體損失,可實現更為減低之傳送損失。銅箔之樹脂層側的表面之十點平均粗糙度Rzjis之下限值並未特別限定,但基於與樹脂層之密著性提高及耐熱性之觀點,Rzjis較佳為0.01μm以上,更佳為0.03μm以上,又更佳為0.05μm以上。
銅箔之厚度並未特別限定,但較佳為0.1μm以上100μm以下,更佳為0.5μm以上70μm以下,又更佳為1 μm以上50μm以下,特佳為1.5μm以上30μm以下,最佳為2 μm以上20μm以下。若為該等範圍內之厚度,則具有可形成微細電路之優點。尤其,銅箔厚度例如為10μm以下之情況,本發明之附樹脂銅箔為了提高處理性,亦可於具備剝離層及載體之附載體銅箔之銅箔表面形成樹脂層。 [實施例]
本發明藉由以下例更具體加以說明。
例1~11 (1)樹脂清漆之調製 首先,準備以下所示之成分(a)~(e)作為樹脂清漆用原料成分。 -成分(a):一分子中具有聚苯醚骨架及丁二烯骨架,且具有乙烯基作為反應性官能基之熱硬化性聚合物(日本化藥股份有限公司製,BX-660T) -成分(b):氫化苯乙烯丁二烯聚合物(熱塑性聚合物)(旭化成股份有限公司製,TUFLEC(R) ,品號MP-10,苯乙烯/乙烯・丁烯比(S/EB比)=30/70) -成分(c):環烯烴聚合物(熱塑性聚合物)(日本ZEON股份有限公司製,L-3PS) -成分(d):矽烷偶合劑(信越化學工業股份有限公司製,KBM-1403,對-苯乙烯基三甲氧基矽烷) -成分(e):氧化矽粒子(ADMATECHS股份有限公司製,ADMAFINE,品號:SC4050-MOT,平均粒徑D50:1.0μm)
以表1所示之調配比(重量比),將上述原料成分量取於圓形燒瓶中,以使原料成分濃度成為28重量%或40重量%之方式添加混合溶劑。該混合溶劑係構成為樹脂清漆中之有機溶劑之比率為85重量%之甲苯及15重量%之甲基乙基酮。對已放入原料成分與混合溶劑之圓形燒瓶中,設置加熱器、攪拌翼及附回流冷卻管之燒瓶蓋,邊攪拌邊升溫至60℃後,於60℃繼續攪拌2小時,使原料成分溶解乃至分散。將攪拌後所得之混合溶液放冷。如此,分別獲得原料成分濃度為28重量%之樹脂清漆與原料成分濃度為40重量%之樹脂清漆。
(2)電解銅箔之製作 藉以下方法製作電解銅箔(厚度18μm)。於硫酸銅溶液中,陰極使用鈦製之旋轉電極(表面粗糙度Ra:0.20μm),陽極使用尺寸安定性陽極(DSA),於溶液溫度45℃、電流密度55A/dm2 下電解,製作作為原箔之電解銅箔。該硫酸銅溶液之組成係銅濃度80g/L,游離硫酸濃度140g/L,雙(3-磺丙基)二硫醚濃度30mg/L,氯化二烯丙基二甲基銨聚合物濃度50mg/L,氯濃度40mg/L。於原箔之電解液面側之表面,形成粒子狀突起。粒子狀突起之形成係於硫酸銅溶液(銅濃度:13g/L,游離硫酸濃度55g/L,9-苯基胍濃度140mg/L,氯濃度:35mg/L)中,於溶液溫度30℃、電流密度50A/dm2 之條件下電解而進行。
對於如此所得之原箔之電解液面側,藉以下所示之條件,依序進行鋅-鎳被膜形成、鉻酸層形成及矽烷層形成。 <鋅-鎳被膜形成> ・焦磷酸鉀濃度:80g/L ・鋅濃度:0.2g/L ・鎳濃度:2g/L ・液溫:40℃ ・電流密度:0.5A/dm2 <鉻酸層形成> ・鉻酸濃度:1g/L,pH11 ・溶液溫度:25℃ ・電流密度:1A/dm2 <矽烷層形成> ・矽烷偶合劑:3-胺基丙基三甲氧基矽烷(3g/L之水溶液) ・液處理方法:淋洗處理
該電解銅箔之表面處理面係十點平均粗糙度Rzjis為0.5μm(依據JIS B0601-2001),粒子狀突起以掃描型電子顯微鏡畫像測得之平均粒徑為100nm,粒子密度為205個/μm2
(3)樹脂膜之製作 所得之原料成分濃度為40重量%之樹脂清漆以缺角輪塗佈機於上述電解銅箔表面,塗佈為乾燥後之樹脂厚度為50μm,以150℃烘箱乾燥3分鐘,獲得附樹脂銅箔。所得附樹脂銅箔2片以該等樹脂彼此抵接之方式貼合,於190℃、90分鐘、20kgf/cm2 之條件下實施真空加壓成形,製作兩面覆銅積層板。所得之兩面覆銅積層板之兩面的銅全部藉由蝕刻去除,獲得厚度100μm之樹脂薄膜。
(4)厚膜薄膜之製作 所得之原料成分濃度為40重量%之樹脂清漆使用缺角輪塗佈機,以乾燥後之樹脂厚度為50μm之方式塗佈於脫模薄膜(AGC製AFREX(R) )之表面,以150℃烘箱乾燥3分鐘,獲得B-階段樹脂。自所得B-階段樹脂剝下上述脫模薄膜,將僅B-階段薄膜20片予以積層,以190℃、90分鐘、20kgf/cm2 之條件下實施真空加壓成形,獲得厚度1000μm之厚膜薄膜。
(5)單面積層基板之製作 所得之原料成分濃度為28重量%之樹脂清漆使用凹版塗佈機,以乾燥後之樹脂厚度為4μm之方式塗佈於上述電解銅箔之表面,以150℃烘箱乾燥2分鐘,獲附樹脂銅箔。重疊複數片預浸片(Panasonic製「R-5680」)成為0.2mm厚,於其上以樹脂抵接於預浸片之方式積層上述附樹脂銅箔,以190℃、90分鐘、30kgf/cm2 之條件下實施真空加壓成形,獲得單面積層基板。
(6)兩面積層基板之製作 所得之原料成分濃度為28重量%之樹脂清漆使用凹版塗佈機,以乾燥後之樹脂厚度為4μm之方式塗佈於上述電解銅箔之表面,以150℃烘箱乾燥2分鐘,獲附樹脂銅箔。重疊預浸片(Panasonic製「R-5680」)成為0.2mm厚,於其上下兩面,以樹脂抵接於預浸片之方式積層上述附樹脂銅箔,以190℃、90分鐘、30kgf/cm2 之條件下實施真空加壓成形,獲得兩面積層基板。
(7)各種評價 針對所製作之樹脂薄膜、厚膜薄膜、單面積層基板及兩面積層基板進行以下評價。
<評價1:常態剝離強度> 藉由減去工法於單面積層基板上形成配線寬10mm、配線厚18μm之銅配線,依據JIS C 6481-1996於常溫(例如25℃)測定剝離強度。測定實施5次,將其平均值設為常態剝離強度之值,依據以下基準進行評價。又,此處所測定之剝離強度係反映預浸片/樹脂間之界面剝離、樹脂之凝集破壞、樹脂層內之相界面剝離及樹脂/銅薄間之界面剝離的4種剝離模式之值,其值越高意指對於預浸片基材之密著性、樹脂層之強度及樹脂對低粗度箔之密著性越優異。結果如表1所示。 -評價A:0.8kgf/cm以上 -評價B:0.7kgf/cm以上且未達0.8kgf/cm -評價C:0.6kgf/cm以上且未達0.7kgf/cm -評價D:未達0.6kgf/cm
<評價2:加熱後剝離強度> 藉由減去工法於單面積層基板上形成配線寬10mm、配線厚18μm之銅配線,以260℃之烘箱加熱處理60分鐘後,依據JIS C 6481-1996測定剝離強度。又,剝離強度之測定並非於260℃,而是自其冷卻至常溫(例如25℃)後進行(依據JIS C 6481-1996之測定係於15~35℃之標準溫度進行者)。測定實施5次,將其平均值設為加熱後剝離強度之值,依據以下基準進行評價。結果如表1所示。 -評價A:0.7kgf/cm以上 -評價B:0.6kgf/cm以上且未達0.7gf/cm -評價C:0.5kgf/cm以上且未達0.6kgf/cm -評價D:未達0.5kgf/cm
<評價3:耐熱性> 將兩面積層基板切成0.7cm見方之尺寸,使用熱機械分析裝置(TMA)(日立高科技股份有限公司製,TMA7100),依據IPC-TM-650,評價T-288耐熱性。該評價係於氮氣環境下以10℃/分鐘自常溫升溫至288℃,於288℃保持120分鐘,於其間持續施加壓縮荷重10mN,藉由監視探針位移而進行。亦即引起熱分解等之氣體產生之情況,兩面積層基板鼓起,感測到位移。將如此測定之120分鐘間之中最大位移套用以下基準,而將耐熱性分級評價。結果如表1所示。 -評價A:120分鐘間之中最大位移未達50μm(無鼓起或鼓起較小) -評價D:120分鐘間之中最大位移50μm以上(鼓起較大)
<評價4:介電正切> 針對樹脂薄膜單體,藉由攝動式空洞共振器法,測定10GHz下之介電正切。該測定係將樹脂薄膜單體切斷為符合共振器之樣品尺寸後,使用測定裝置(KEYCOM製共振器及KEYSIGHT製網絡分析儀),依據JIS R 1641進行。所測定之介電正切藉以下基準分級評價。結果如表1所示。 -評價A:10GHz下之介電正切未達0.0015 -評價B:10GHz下之介電正切為0.0015以上且未達0.0020 -評價C:10GHz下之介電正切為0.0020以上且未達0.0030 -評價D:10GHz下之介電正切為0.0030以上
<評價5:吸水率> 自厚膜薄膜切出5片50mm×50mm尺寸之試驗片。針對該等試驗片,依據JIS C 6481-1996測定吸水率,將該等之平均值設為吸水率之代表值,依據以下基準進行評價。結果如表1所示。 -評價A:吸水率之值未達0.1% -評價B:吸水率之值為0.1%以上且未達0.3% -評價C:吸水率之值為0.3%以上且未達0.5% -評價D:吸水率之值為0.5%以上
Figure 02_image001

Claims (12)

  1. 一種樹脂組成物,其包含下述成分: (a)一分子中具有聚苯醚骨架及丁二烯骨架,且具有選自由乙烯基、苯乙烯基、烯丙基、乙炔基及(甲基)丙烯醯基所成之群中之至少1種的聚合物,與 (b)含有苯乙烯丁二烯骨架之聚合物及(c)含有環烯烴骨架之聚合物之至少一者, 相對於前述成分(a)、前述成分(b)及前述成分(c)之合計含量100重量份,前述成分(a)之含量為15重量份以上60重量份以下,且前述成分(b)及前述成分(c)之合計含量為40重量份以上85重量份以下。
  2. 如請求項1之樹脂組成物,其中前述成分(a)之含量為20重量份以上55重量份以下。
  3. 如請求項1或2之樹脂組成物,其中包含前述成分(b)及前述成分(c)之兩者。
  4. 如請求項3之樹脂組成物,其中前述成分(b)相對於前述成分(c)之重量比b/c為0.8以上10.0以下。
  5. 如請求項1或2之樹脂組成物,其中前述樹脂組成物進而含有(d)矽烷偶合劑, 相對於前述成分(a)、前述成分(b)及前述成分(c)之合計含量100重量份,前述成分(d)之含量為0.10重量份以上10.0重量份以下。
  6. 如請求項1或2之樹脂組成物,其中前述樹脂組成物進而含有(e)無機填料, 相對於前述成分(a)、前述成分(b)及前述成分(c)之合計含量100重量份,前述成分(e)之含量為50重量份以上400重量份以下。
  7. 如請求項1或2之樹脂組成物,其硬化後於頻率10GHz下之介電正切未達0.0030。
  8. 如請求項1或2之樹脂組成物,其硬化後依據JIS C 6481-1996測定之吸水率未達0.5%。
  9. 一種附樹脂銅箔,其包含銅箔與設於該銅箔之至少一面之由請求項1至8中任一項之樹脂組成物所構成的樹脂層。
  10. 如請求項9之附樹脂銅箔,其中前述銅箔之前述樹脂層側之表面的依據JIS B0601-2001測定之十點平均粗糙度Rzjis為0.5μm以下。
  11. 如請求項9或10之附樹脂銅箔,其中於前述樹脂層經硬化之狀態下,依據JIS C 6481-1996測定之前述樹脂層與前述銅箔間之常態剝離強度為0.6kgf/cm以上。
  12. 如請求項9或10之附樹脂銅箔,其中使前述樹脂層硬化且於260℃加熱60分鐘後之依據JIS C 6481-1996測定之前述樹脂層與前述銅箔間之剝離強度為0.5kgf/cm以上。
TW109138175A 2019-11-05 2020-11-03 樹脂組成物及附樹脂銅箔 TW202134346A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019200483 2019-11-05
JP2019-200483 2019-11-05

Publications (1)

Publication Number Publication Date
TW202134346A true TW202134346A (zh) 2021-09-16

Family

ID=75848364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109138175A TW202134346A (zh) 2019-11-05 2020-11-03 樹脂組成物及附樹脂銅箔

Country Status (6)

Country Link
US (1) US20220389162A1 (zh)
JP (1) JPWO2021090730A1 (zh)
KR (1) KR20220098127A (zh)
CN (1) CN114641531A (zh)
TW (1) TW202134346A (zh)
WO (1) WO2021090730A1 (zh)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5167354A (ja) * 1974-12-10 1976-06-10 Asahi Dow Ltd Nannenjushisoseibutsu
JPS5898359A (ja) * 1981-12-07 1983-06-11 Mitsubishi Petrochem Co Ltd ポリフエニレンエ−テル樹脂組成物の製造方法
JPS6053554A (ja) * 1983-09-02 1985-03-27 Japan Synthetic Rubber Co Ltd ポリフエニレンエ−テル樹脂組成物
WO2003020000A1 (en) 2001-08-22 2003-03-06 World Properties Inc. Method for improving bonding of circuit substrates to metal and articles formed thereby
DE102006012879A1 (de) * 2006-03-21 2007-09-27 Clariant International Limited Phosphorhaltige Mischungen, ein Verfahren zu ihrer Herstellung und ihre Verwendung
JP4310471B2 (ja) 2007-01-23 2009-08-12 ナン ヤ プラスティクス コーポレーション ポリブタジエン熱硬化性樹脂プリント回路基板組成物およびその製造方法
JP5549055B2 (ja) * 2007-07-11 2014-07-16 日立化成株式会社 熱硬化性樹脂組成物、これを用いたプリント配線板用樹脂ワニス、プリプレグ及び金属張積層板
JP5724503B2 (ja) * 2010-11-15 2015-05-27 日立化成株式会社 印刷配線板用樹脂フィルム及びその製造方法
JP6504386B2 (ja) * 2014-12-16 2019-04-24 パナソニックIpマネジメント株式会社 ポリフェニレンエーテル樹脂組成物、プリプレグ、金属張積層板及びプリント配線板
JP7137950B2 (ja) * 2018-03-28 2022-09-15 三井金属鉱業株式会社 樹脂組成物、樹脂付銅箔、プリント配線板、及び樹脂付銅箔の処理方法

Also Published As

Publication number Publication date
JPWO2021090730A1 (zh) 2021-05-14
US20220389162A1 (en) 2022-12-08
CN114641531A (zh) 2022-06-17
KR20220098127A (ko) 2022-07-11
WO2021090730A1 (ja) 2021-05-14

Similar Documents

Publication Publication Date Title
JP7166334B2 (ja) 銅張積層板
US11166383B2 (en) Resin-clad copper foil, copper-clad laminated plate, and printed wiring board
TWI589628B (zh) 樹脂組合物
TWI780176B (zh) 銅箔基板和包含它的印刷電路板
JP5130698B2 (ja) 多層プリント配線板用絶縁樹脂組成物、基材付き絶縁シート、多層プリント配線板及び半導体装置
KR20200012762A (ko) 수지 조성물
JP7212626B2 (ja) プリント配線板用樹脂組成物、樹脂付銅箔、銅張積層板、及びプリント配線板
TW202134346A (zh) 樹脂組成物及附樹脂銅箔
TW202242025A (zh) 樹脂組成物、附有樹脂銅箔及印刷配線板
JP2012064952A (ja) 多層プリント配線板用絶縁樹脂組成物、基材付き絶縁シート、多層プリント配線板及び半導体装置
TW202130504A (zh) 低介電疊層體
JP2017035843A (ja) 接着層付き金属箔、これを用いた金属張積層板および多層プリント配線板
TWI819735B (zh) 預浸體、覆金屬箔疊層板及印刷配線板
WO2024009861A1 (ja) 銅張積層板、プリント配線板及び半導体パッケージ
TW202411348A (zh) 樹脂組成物、附有樹脂之銅箔及印刷配線板
JP2013033994A (ja) 多層プリント配線板用絶縁樹脂組成物、基材付き絶縁シート、多層プリント配線板及び半導体装置
JP2010083072A (ja) 銅張積層板およびプリント配線板