TW202133254A - Processing method of wafer to stably perform the so-called TAIKO grinding in which a circular concave portion corresponding to a device region and an annular convex portion corresponding to an outer peripheral surplus region are formed on the back surface of a wafer - Google Patents

Processing method of wafer to stably perform the so-called TAIKO grinding in which a circular concave portion corresponding to a device region and an annular convex portion corresponding to an outer peripheral surplus region are formed on the back surface of a wafer Download PDF

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TW202133254A
TW202133254A TW110104710A TW110104710A TW202133254A TW 202133254 A TW202133254 A TW 202133254A TW 110104710 A TW110104710 A TW 110104710A TW 110104710 A TW110104710 A TW 110104710A TW 202133254 A TW202133254 A TW 202133254A
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wafer
grinding
back surface
area
grinding wheel
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藤井祐介
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02035—Shaping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/02—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0069—Other grinding machines or devices with means for feeding the work-pieces to the grinding tool, e.g. turntables, transfer means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/02—Frames; Beds; Carriages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/04—Headstocks; Working-spindles; Features relating thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/20—Drives or gearings; Equipment therefor relating to feed movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

The object of the present invention is to stably perform the so-called TAIKO grinding in which a circular concave portion corresponding to a device region and an annular convex portion corresponding to an outer peripheral surplus region are formed on the back surface of a wafer. The solution of the wafer processing method includes a processing preparation step 1001, in which a wafer is held by a chuck table and a rough grinding wheel having a diameter equivalent to the radius of the wafer is fixed to the lower end of a spindle; a limited grinding step 1002, in which the back surface of the wafer corresponding to the device region excluding the central portion of the wafer held by the chuck table is ground with a rough grinding wheel to form an annular concave portion and a central convex portion; a position adjustment step 1003, in which the rough grinding wheel is separated from the wafer and moves towards the outer periphery of the wafer; and a circular grinding step 1004, in which the back surface of the wafer corresponding to the device region including the central convex portion is ground to remove the central convex portion and form a circular concave portion, and the annular convex portion is formed on the back surface of the wafer corresponding to the outer peripheral surplus region.

Description

晶圓之加工方法Wafer processing method

本發明關於一種晶圓之加工方法，特別是進行所謂TAIKO（註冊商標）研削之晶圓之加工方法。The present invention relates to a wafer processing method, especially a wafer processing method for so-called TAIKO (registered trademark) grinding.

半導體晶圓朝輕薄短小化進展，形成有半導體元件的晶圓被研削加工至厚度100µm以下。研削後的晶圓會因發生在研削面的研削變形而發生翹曲。因在發生翹曲的晶圓背面非常難以進行金屬等的成膜，故僅研削排除晶圓的外周緣之區域，並使用所謂TAIKO研削技術（例如，參閱專利文獻1及專利文獻2），其在晶圓的背面形成對應於元件區域之圓形凹部、與對應於外周剩餘區域之環狀凸部。 [習知技術文獻] [專利文獻]Semiconductor wafers are becoming lighter, thinner, shorter and smaller, and wafers on which semiconductor elements are formed are ground to a thickness of 100 µm or less. The wafer after grinding will warp due to the grinding deformation that occurs on the grinding surface. Since it is very difficult to form a film of metal or the like on the backside of the warped wafer, only the area excluding the outer periphery of the wafer is ground, and the so-called TAIKO grinding technology is used (for example, refer to Patent Document 1 and Patent Document 2). On the back surface of the wafer, a circular recess corresponding to the device area and a ring-shaped protrusion corresponding to the remaining area on the outer periphery are formed. [Literature Technical Literature] [Patent Literature]

[專利文獻1]日本特許第5390740號公報 [專利文獻2]日本特許第4758222號公報[Patent Document 1] Japanese Patent No. 5390740 [Patent Document 2] Japanese Patent No. 4758222

[發明所欲解決的課題] 在TAIKO研削中，因使用直徑小於晶圓的研削輪，故相較於直徑與晶圓同等或大於晶圓之一般研削輪，每一個研削磨石的去除量相對地變大，有時無法穩定地實施TAIKO研削。又，即使以相同旋轉數旋轉，也會因直徑小而難以提升旋轉速度，此亦成為同樣傾向的原因。[The problem to be solved by the invention] In TAIKO grinding, because a grinding wheel with a diameter smaller than a wafer is used, compared to a general grinding wheel with a diameter equal to or larger than a wafer, the removal amount of each grinding stone is relatively large, and sometimes it is not stable. Implementation of TAIKO grinding. In addition, even if it is rotated at the same number of rotations, it is difficult to increase the rotation speed due to the small diameter, which also causes the same tendency.

尤其，形成於背面的氧化膜或氮化膜等係難以研削，有時主軸馬達的負荷電流值會超過規定值，而無法穩定地實施TAIKO研削。並且，所謂高度摻雜晶圓（high-doped wafer）亦有同樣的傾向。In particular, the oxide film or nitride film formed on the back surface is difficult to grind, and the load current value of the spindle motor may exceed a predetermined value, and TAIKO grinding cannot be stably performed. In addition, so-called high-doped wafers have the same tendency.

本發明之目的在於提供一種晶圓之加工方法，其能穩定地實施在晶圓的背面形成對應於元件區域之圓形凹部與對應於外周剩餘區域之環狀凸部的所謂TAIKO研削。The object of the present invention is to provide a wafer processing method that can stably perform the so-called TAIKO grinding of forming circular recesses corresponding to the element area and annular protrusions corresponding to the remaining area of the outer periphery on the back surface of the wafer.

[解決課題的技術手段] 為了解決上述課題並達成目的，本發明的晶圓之加工方法，其在所述晶圓的正面具有：元件區域，其在由互相交叉的多條分割預定線所劃分之各區域形成有元件；以及外周剩餘區域，其圍繞該元件區域，所述晶圓之加工方法的特徵在於，具備：加工準備步驟，其具有保持晶圓的保持面並以能旋轉的卡盤台保持晶圓，在垂直於該保持面的旋轉軸之主軸的下端固定研削輪，所述研削輪的直徑相當於晶圓的半徑；限定研削步驟，其以該研削輪研削該卡盤台所保持之晶圓中排除中央部分後對應於元件區域之晶圓的背面，形成環狀凹部且在晶圓的背面形成被該環狀凹部包圍的中央凸部；位置調整步驟，其在實施該限定研削步驟後，將該研削輪從該晶圓分離後，使該研削輪朝向晶圓的外周緣相對地移動；以及圓形研削步驟，其在實施該位置調整步驟後，使用該研削輪，研削包含該中央凸部之對應於該元件區域之晶圓的背面，去除該元件區域所對應之晶圓的背面的該中央凸部而形成圓形凹部，在對應於該外周剩餘區域之晶圓的背面形成環狀凸部。[Technical means to solve the problem] In order to solve the above-mentioned problems and achieve the objective, the wafer processing method of the present invention has on the front side of the wafer: a device area in which a device is formed in each area divided by a plurality of intersecting predetermined dividing lines; And the remaining area on the outer periphery, which surrounds the device area, and the method for processing the wafer is characterized by comprising: a processing preparation step having a holding surface for holding the wafer and holding the wafer with a rotatable chuck table. A grinding wheel is fixed at the lower end of the main shaft of the rotating shaft of the holding surface, the diameter of the grinding wheel is equivalent to the radius of the wafer; the grinding step is defined, and the center part of the wafer held by the chuck table is eliminated by the grinding wheel. Then, corresponding to the back surface of the wafer in the element area, a ring-shaped recess is formed and a central convex portion surrounded by the ring-shaped recess is formed on the back side of the wafer; After being separated from the wafer, the grinding wheel is relatively moved toward the outer periphery of the wafer; and a circular grinding step, which after performing the position adjustment step, uses the grinding wheel to grind the center convex portion corresponding to the On the backside of the wafer in the device area, the central convex portion of the backside of the wafer corresponding to the device area is removed to form a circular concave portion, and a ring-shaped convex portion is formed on the backside of the wafer corresponding to the peripheral remaining area.

在所述晶圓之加工方法中，亦可具備：精研削步驟，其在實施該圓形研削步驟後，以具有研削磨石的精研削輪更深地研削該圓形凹部，所述研削磨石係以結合劑固定比該研削輪更細的磨粒而成。The wafer processing method may also include: a fine grinding step, which after the circular grinding step is performed, the circular recessed portion is grind more deeply with a fine grinding wheel with a grinding stone, the grinding stone It is made by fixing abrasive grains finer than the grinding wheel with a bonding agent.

在所述晶圓之加工方法中，相較於在該限定研削步驟形成的該環狀凹部，在該圓形研削步驟形成的該圓形凹部被形成地更深。In the wafer processing method, the circular recess formed in the circular grinding step is formed deeper than the annular recess formed in the limited grinding step.

[發明功效] 本案發明的晶圓之加工方法，發揮以下效果：能穩定地實施在晶圓的背面形成對應於元件區域之圓形凹部與對應於外周剩餘區域之環狀凸部的所謂TAIKO研削。[Efficacy of invention] The wafer processing method of the present invention has the effect of stably performing so-called TAIKO grinding in which circular recesses corresponding to the element area and ring-shaped protrusions corresponding to the remaining area of the outer periphery can be formed on the back surface of the wafer.

參閱圖式詳細說明用於實施本發明的方式（實施方式）。本發明並不受限於以下的實施方式所記載的內容。並且，在以下所記載的構成要素中，包含本發明所屬技術領域中具有通常知識者可輕易思及者、實質上相同者。再者，能將以下所記載的構成進行適當組合。並且，在不脫離本發明要旨的範圍內可進行構成的各種省略、取代或變更。The mode (embodiment) for implementing the present invention will be described in detail with reference to the drawings. The present invention is not limited to the content described in the following embodiments. In addition, the constituent elements described below include those that can be easily thought of by those having ordinary knowledge in the technical field to which the present invention pertains, and those that are substantially the same. In addition, the configurations described below can be appropriately combined. In addition, various omissions, substitutions, or changes in the configuration can be made without departing from the scope of the present invention.

[實施方式1] 基於圖式說明本發明的實施方式1的晶圓之加工方法。圖1是實施方式1的晶圓之加工方法的加工對象的晶圓之立體圖。圖2是表示實施方式1的晶圓之加工方法所使用的研削裝置的構成例之立體圖。圖3是由下方表示圖2所示的研削裝置的粗研削單元及精研削單元之立體圖。圖4是表示實施方式1的晶圓之加工方法的流程之流程圖。[Embodiment 1] The wafer processing method of Embodiment 1 of the present invention will be described based on the drawings. FIG. 1 is a perspective view of a wafer to be processed in the wafer processing method of Embodiment 1. FIG. 2 is a perspective view showing a configuration example of a grinding device used in the wafer processing method of Embodiment 1. FIG. 3 is a perspective view showing the rough grinding unit and the fine grinding unit of the grinding device shown in FIG. 2 from below. 4 is a flowchart showing the flow of the wafer processing method of the first embodiment.

實施方式1的晶圓之加工方法是加工圖1所示的晶圓200之方法。實施方式1的晶圓之加工方法的加工對象亦即晶圓200，是以矽為母材之圓板狀的半導體晶圓或以藍寶石、SiC（碳化矽）等為母材之光學元件晶圓等晶圓。在實施方式1中，晶圓200的圓盤狀的母材是由矽所構成，並至少在背面201側形成有氧化膜或氮化膜等膜202。The wafer processing method of the first embodiment is a method of processing the wafer 200 shown in FIG. 1. The wafer 200, which is the processing object of the wafer processing method of the first embodiment, is a disc-shaped semiconductor wafer with silicon as a base material, or an optical element wafer with sapphire, SiC (silicon carbide), etc., as a base material Wait for the wafer. In the first embodiment, the disc-shaped base material of the wafer 200 is made of silicon, and a film 202 such as an oxide film or a nitride film is formed at least on the back surface 201 side.

在實施方式1中，晶圓200的背面201側形成有膜202。晶圓200因比起未形成膜202的晶圓更多形成了膜202，故相較於母材係由矽所構成且較未形成膜202的晶圓，背面201側會更難研削（亦即，為難研削性的晶圓）。In the first embodiment, the film 202 is formed on the back surface 201 side of the wafer 200. Since wafer 200 has more film 202 formed than a wafer without film 202, it is more difficult to grind on the back side 201 than a wafer with a base material made of silicon and less film 202 is not formed. That is, it is a difficult-to-grind wafer).

如圖1所示，晶圓200在正面205具有：元件區域203、與圍繞元件區域203的外周剩餘區域204。元件區域203在由互相正交的多條分割預定線206所劃分之各區域形成有元件207。元件207為IC（Integrated Circuit，積體電路）或LSI（Large Scale Integration，大型積體電路）等積體電路。此外，外周剩餘區域204係晶圓200的正面205中圍繞元件區域203且未形成元件207之區域。As shown in FIG. 1, the wafer 200 has, on the front side 205, a device area 203 and a peripheral remaining area 204 surrounding the device area 203. In the element area 203, an element 207 is formed in each area divided by a plurality of predetermined dividing lines 206 orthogonal to each other. The element 207 is an integrated circuit such as IC (Integrated Circuit) or LSI (Large Scale Integration). In addition, the peripheral remaining area 204 is an area on the front side 205 of the wafer 200 that surrounds the device area 203 and does not form the device 207.

接著，說明在實施方式1的晶圓之加工方法所使用的圖2所示的研削裝置1。研削裝置1為研削（相當於加工）晶圓200的背面201之加工裝置。如圖2所示，研削裝置1主要具備：裝置本體2；粗研削單元3（相當於研削單元）；精研削單元4（相當於研削單元）；研削進給單元5；轉台6；設置在轉台6上的多個（在實施方式1中為3個）卡盤台7；卡匣8、9；對位單元10；搬送單元11；清洗單元12；搬出搬入單元13；以及控制單元100。Next, the grinding apparatus 1 shown in FIG. 2 used in the wafer processing method of the first embodiment will be described. The grinding device 1 is a processing device for grinding (equivalent to processing) the back surface 201 of the wafer 200. As shown in Figure 2, the grinding device 1 mainly includes: a device body 2; a rough grinding unit 3 (equivalent to a grinding unit); a fine grinding unit 4 (equivalent to a grinding unit); a grinding feed unit 5; a turntable 6; Multiple (three in Embodiment 1) chuck tables 7 on 6; cassettes 8, 9; alignment unit 10; conveying unit 11; cleaning unit 12; carry-out and carry-in unit 13; and control unit 100.

轉台6為設於裝置本體2的上表面之圓盤狀的工作台，被設置成能在水平面內旋轉，並在預定的時間點被旋轉驅動。在此轉台6上，例如，以例如120度的相位角等間隔地配設3個卡盤台7。此等3個卡盤台7係在保持面71具備真空卡盤的卡盤台構造，晶圓200被載置於保持面71上，並吸引保持晶圓200。此等卡盤台7在研削時會繞著與鉛直方向亦即Z軸方向平行的軸心，並藉由旋轉驅動機構而在水平面內旋轉驅動。如此，卡盤台7具有保持晶圓200的保持面71，並能繞著軸心旋轉。The turntable 6 is a disc-shaped worktable provided on the upper surface of the device body 2 and is set to be rotatable in a horizontal plane and to be rotationally driven at a predetermined point in time. On this turntable 6, for example, three chuck tables 7 are arranged at equal intervals at a phase angle of 120 degrees, for example. These three chuck tables 7 have a chuck table structure having a vacuum chuck on the holding surface 71, and the wafer 200 is placed on the holding surface 71, and the wafer 200 is sucked and held. These chuck tables 7 are rotated around an axis parallel to the vertical direction, that is, the Z-axis direction during grinding, and are driven to rotate in a horizontal plane by a rotary drive mechanism. In this way, the chuck table 7 has a holding surface 71 for holding the wafer 200 and can rotate around the axis.

卡盤台7藉由轉台6的旋轉，而依序被移動至搬入搬出區域301、粗研削區域302、精研削區域303、搬入搬出區域301。The chuck table 7 is moved to the carry-in/out area 301, the rough grinding area 302, the fine grinding area 303, and the carry-in/out area 301 by the rotation of the turntable 6 in this order.

此外，搬入搬出區域301是將晶圓200搬入搬出卡盤台7的區域，粗研削區域302是以粗研削單元3將保持於卡盤台7之晶圓200進行粗研削（相當於研削）的區域，精研削區域303是以精研削單元4將保持於卡盤台7之晶圓200進行精研削（相當於研削）的區域。In addition, the carry-in and carry-out area 301 is the area where the wafer 200 is carried in and out of the chuck table 7, and the rough grinding area 302 is used for rough grinding (equivalent to grinding) of the wafer 200 held by the chuck table 7 by the rough grinding unit 3 The area, the finishing area 303 is an area where the finishing unit 4 performs finishing (equivalent to grinding) the wafer 200 held on the chuck table 7.

粗研削單元3裝設具備粗研削用的研削磨石31之粗研削用的粗研削輪32，且是將粗研削區域302中保持於卡盤台7的保持面71之晶圓200的背面201進行粗研削之研削單元。精研削單元4裝設具備精研削用的研削磨石41之精研削用的精研削輪42，且是將精研削區域303中保持於卡盤台7的保持面71之晶圓200的背面201進行精研削之研削單元。此外，研削單元3、4因構成大致相同，故以下對於相同部分標示相同符號並進行說明。The rough grinding unit 3 is equipped with a rough grinding wheel 32 for rough grinding with a grinding grindstone 31 for rough grinding, and it holds the back surface 201 of the wafer 200 in the rough grinding area 302 on the holding surface 71 of the chuck table 7 Grinding unit for rough grinding. The lapping unit 4 is equipped with a lapping wheel 42 for lapping with a lapping grindstone 41 for lapping, and is the back 201 of the wafer 200 that holds the lapping area 303 on the holding surface 71 of the chuck table 7 The grinding unit for fine grinding. In addition, since the grinding units 3 and 4 have substantially the same structure, the same parts are denoted by the same symbols and described below.

如圖3所示，粗研削單元3及精研削單元4是將研削輪32、42裝設於主軸33的下端。研削輪32、42具有：圓環狀的環狀基台34、以及固定於環狀基台34的下表面341之多個研削磨石31、41。研削磨石31、41係在環狀基台34的下表面341的外緣部被排列在周方向。多個研削磨石31、41的下表面311、411形成圓環狀。研削磨石31、41是以結合劑固定磨粒而成。精研削輪42的研削磨石41之磨粒比粗研削輪32的研削磨石31之磨粒更細。As shown in FIG. 3, the rough grinding unit 3 and the fine grinding unit 4 are equipped with grinding wheels 32 and 42 on the lower end of the main shaft 33. The grinding wheels 32 and 42 have an annular ring base 34 and a plurality of grinding stones 31 and 41 fixed to the lower surface 341 of the ring base 34. The grinding stones 31 and 41 are arranged in the circumferential direction on the outer edge of the lower surface 341 of the ring base 34. The lower surfaces 311 and 411 of the plurality of grinding stones 31 and 41 form an annular shape. The grinding grindstones 31 and 41 are made by fixing abrasive grains with a bonding agent. The grinding grindstone 41 of the fine grinding wheel 42 has finer abrasive grains than the grinding grindstone 31 of the rough grinding wheel 32.

在實施方式1中，研削輪32、42的多個研削磨石31、41的下表面311、411所形成之圓環狀的外徑35（相當於研削輪32、42的直徑）與晶圓200的半徑208相等。在本發明中，將研削輪32、42的多個研削磨石31、41的下表面311、411所形成之圓環狀的外徑35與晶圓200的半徑208相等一事，稱為研削輪32、42的直徑亦即外徑相當於晶圓200的半徑208。In the first embodiment, the annular outer diameter 35 (corresponding to the diameter of the grinding wheels 32, 42) formed by the lower surfaces 311, 411 of the plurality of grinding stones 31, 41 of the grinding wheels 32, 42 and the wafer The radius 208 of 200 is equal. In the present invention, the fact that the outer diameter 35 of the ring formed by the lower surfaces 311, 411 of the plurality of grinding stones 31, 41 of the grinding wheels 32, 42 is equal to the radius 208 of the wafer 200 is called a grinding wheel The diameters of 32 and 42 are equivalent to the radius 208 of the wafer 200.

主軸33是繞著與垂直於保持面71的Z軸方向平行之旋轉軸38旋轉自如地被容納在主軸外殼36（圖2所示）內，並藉由已安裝在主軸外殼36的主軸馬達37（圖2所示）而繞著軸心旋轉。主軸33被形成為圓柱狀，在下端設有用於裝設研削輪32、42的輪架39。輪架39從主軸33的下端在外周方向遍及全周地突出，外周面的平面形狀被形成為圓形。輪架39在下表面391重疊環狀基台34的上表面，並藉由未圖示的螺栓固定研削輪32、42。主軸33與輪架39被配置在互相成為同軸的位置。The main shaft 33 is rotatably housed in the main shaft housing 36 (shown in FIG. 2) around a rotating shaft 38 parallel to the Z-axis direction perpendicular to the holding surface 71, and is driven by a main shaft motor 37 installed in the main shaft housing 36 (Shown in Figure 2) while rotating around the axis. The main shaft 33 is formed in a cylindrical shape, and a wheel frame 39 for mounting the grinding wheels 32 and 42 is provided at the lower end. The wheel carrier 39 protrudes from the lower end of the main shaft 33 over the entire circumference in the outer circumferential direction, and the planar shape of the outer circumferential surface is formed in a circular shape. The wheel frame 39 overlaps the upper surface of the ring base 34 on the lower surface 391, and the grinding wheels 32 and 42 are fixed by bolts (not shown). The main shaft 33 and the wheel carrier 39 are arranged at positions coaxial with each other.

研削單元3、4藉由主軸馬達37而使主軸33及研削輪32、42繞著旋轉軸38旋轉，且一邊將研削水供給至研削區域302、303中保持於卡盤台7之晶圓200的背面201，一邊藉由研削進給單元5將研削磨石31、41以預定的進給速度接近卡盤台7，藉此將晶圓200的背面201進行粗研削或精研削。The grinding units 3 and 4 use the spindle motor 37 to rotate the spindle 33 and the grinding wheels 32 and 42 around the rotating shaft 38, while supplying grinding water to the wafer 200 held in the chuck table 7 in the grinding areas 302 and 303 The back surface 201 of the wafer 200 is subjected to rough grinding or fine grinding to the back surface 201 of the wafer 200 while the grinding stones 31 and 41 are approached to the chuck table 7 at a predetermined feed speed by the grinding and feeding unit 5.

研削進給單元5是使研削單元3、4在Z軸方向移動之單元。在實施方式1中，研削進給單元5設有立設柱21，立設柱21是從裝置本體2之與水平方向平行的Y軸方向的一端部所立設。研削進給單元5具備：習知的滾珠螺桿，其被設為繞著軸心旋轉自如；習知的馬達，其使滾珠螺桿繞著軸心旋轉；及習知的導軌，其將各研削單元3、4的主軸外殼36支撐成在Z軸方向移動自如。The grinding feed unit 5 is a unit that moves the grinding units 3 and 4 in the Z-axis direction. In the first embodiment, the grinding and feeding unit 5 is provided with an upright post 21 that is erected from one end of the apparatus body 2 in the Y-axis direction parallel to the horizontal direction. The grinding and feeding unit 5 is provided with: a conventional ball screw, which is set to freely rotate around the axis; a conventional motor, which rotates the ball screw around the axis; and a conventional guide rail, which connects each grinding unit The spindle housings 36 of 3 and 4 are supported so as to move freely in the Z-axis direction.

此外，在實施方式1中，粗研削單元3及精研削單元4的研削輪32、42的旋轉中心亦即旋轉軸38與卡盤台7的旋轉中心亦即軸心係互相在水平方向空開間隔並平行配置，且遍及研削磨石31、41通過保持於卡盤台7之晶圓200的背面201的中心210或中心210附近之位置、以及輪架39與研削區域302、303的卡盤台7成為同軸之位置，並藉由滑動移動機構16，每個研削進給單元5及每個立設柱21沿著水平方向移動。滑動移動單元16具備：習知的滾珠螺桿，其被設為繞著軸心旋轉自如；習知的馬達，其使滾珠螺桿繞著軸心旋轉；以及習知的導軌，其將支撐各研削單元3、4之立設柱21支撐成在水平方向移動自如。In addition, in the first embodiment, the rotation centers of the grinding wheels 32 and 42 of the rough grinding unit 3 and the fine grinding unit 4, that is, the rotation center of the rotation shaft 38, and the rotation center of the chuck table 7, that is, the axis system are spaced apart from each other in the horizontal direction. The chucks are spaced apart and arranged in parallel, and pass through the center 210 or near the center 210 of the back 201 of the wafer 200 held on the chuck table 7 throughout the grinding stones 31, 41, as well as the wheel frame 39 and the chuck of the grinding areas 302, 303 The table 7 becomes a coaxial position, and by the sliding movement mechanism 16, each grinding and feeding unit 5 and each vertical column 21 move in the horizontal direction. The sliding movement unit 16 is provided with: a conventional ball screw, which is set to freely rotate around the axis; a conventional motor, which rotates the ball screw around the axis; and a conventional guide rail, which supports each grinding unit The upright columns 21 of 3 and 4 are supported so as to move freely in the horizontal direction.

卡匣8、9是具有多個槽且用於容納晶圓200之容納容器。其中，卡匣8容納研削前的晶圓200，卡匣9容納研削後的晶圓200。並且，對位單元10是用於暫置從卡匣8取出的晶圓200並進行其中心對位之工作台。The cassettes 8 and 9 are containers having a plurality of grooves and used for accommodating the wafer 200. Among them, the cassette 8 contains the wafer 200 before grinding, and the cassette 9 contains the wafer 200 after grinding. In addition, the alignment unit 10 is a workbench for temporarily placing the wafer 200 taken out from the cassette 8 and performing center alignment.

搬送單元11設有2個。2個搬送單元11具有吸附晶圓200之吸附墊。其中一個搬送單元11將已被對位單元10對位之研削前的晶圓200吸附保持並搬入位於搬入搬出區域301之卡盤台7上。另一個搬送單元11將位於搬入搬出區域301之保持於卡盤台7上之研削後的晶圓200吸附保持並搬出至清洗單元12。Two transport units 11 are provided. The two conveying units 11 have suction pads for sucking the wafer 200. One of the transfer units 11 sucks and holds the wafer 200 before grinding that has been aligned by the alignment unit 10 and carries it into the chuck table 7 located in the carry-in and carry-out area 301. The other transport unit 11 sucks and holds the ground wafer 200 held on the chuck table 7 in the carry-in and carry-out area 301 and carries it out to the cleaning unit 12.

搬出搬入單元13例如是具備U字型手部131的拾取機器人，藉由U字型手部131將晶圓200吸附保持並搬送。具體而言，搬出搬入單元13將研削前的晶圓200從卡匣8取出，並往對位單元10搬出，且將研削後的晶圓200從清洗單元12取出，並往卡匣9搬入。清洗單元12清洗研削後的晶圓200，去除附著在經研削的背面201之研削屑等污染物。The carry-out and carry-in unit 13 is, for example, a pick-up robot provided with a U-shaped hand 131, and the U-shaped hand 131 sucks and holds the wafer 200 and transports it. Specifically, the carry-out carry-in unit 13 takes out the wafer 200 before grinding from the cassette 8 and carries it out to the alignment unit 10, and takes out the wafer 200 after grinding from the cleaning unit 12 and loads it into the cassette 9. The cleaning unit 12 cleans the ground wafer 200 and removes contaminants such as grinding debris attached to the ground back surface 201.

控制單元100是分別控制構成研削裝置1的上述各構成要素之單元。亦即，控制單元100是使研削裝置1執行對於晶圓200之研削動作的單元。控制單元100是具有下述裝置的電腦：運算處理裝置，其具有如CPU（central processing unit，中央處理器）般的微處理器；記憶裝置，其具有如ROM（read only memory，唯讀記憶體）或RAM（random access memory，隨機存取記憶體）般的記憶體；以及輸入輸出界面裝置。The control unit 100 is a unit that controls each of the above-mentioned constituent elements constituting the grinding apparatus 1 respectively. That is, the control unit 100 is a unit that causes the grinding apparatus 1 to perform a grinding operation on the wafer 200. The control unit 100 is a computer with the following devices: an arithmetic processing device, which has a microprocessor such as a CPU (central processing unit, central processing unit); a memory device, which has a read only memory (ROM) ) Or RAM (random access memory, random access memory)-like memory; and input and output interface devices.

控制單元100的運算處理器依照記憶於記憶裝置的電腦程式而實施運算處理，並透過輸入輸出界面裝置，將用於控制研削裝置1的控制訊號輸出至研削裝置1的上述構成要素。並且，控制裝置100連接：顯示單元，其係藉由顯示加工動作的狀態或影像等的液晶顯示裝置等所構成；以及輸入單元，其在操作員登錄加工內容資訊等時使用。輸入單元係由設於顯示單元的觸控面板、與鍵盤等之中至少一個所構成。The arithmetic processor of the control unit 100 implements arithmetic processing in accordance with a computer program stored in the memory device, and outputs a control signal for controlling the grinding device 1 to the aforementioned constituent elements of the grinding device 1 through the input and output interface device. In addition, the control device 100 is connected to: a display unit, which is constituted by a liquid crystal display device that displays the state of processing operations or images, and the like; and an input unit, which is used when the operator registers processing content information and the like. The input unit is composed of at least one of a touch panel and a keyboard provided on the display unit.

實施方式1的晶圓之加工方法係使用研削輪32、42，研削對應於元件區域203之晶圓200的背面201，在元件區域203所對應之晶圓200的背面201形成圓形凹部211（圖15、16所示），在對應於外周剩餘區域204之晶圓200的背面201形成環狀凸部212（圖15、16所示），亦即對晶圓200實施所謂TAIKO研削之加工方法。此外，所謂對應於元件區域203之晶圓200的背面201，是指晶圓200的背面201中與元件區域203在晶圓200的厚度方向重疊之區域，所謂對應於外周剩餘區域204之晶圓200的背面201，是指晶圓200的背面201中與外周剩餘區域204在晶圓200的厚度方向重疊之區域。The wafer processing method of Embodiment 1 uses grinding wheels 32 and 42 to grind the back surface 201 of the wafer 200 corresponding to the element area 203, and a circular recess 211 is formed on the back surface 201 of the wafer 200 corresponding to the element area 203 ( 15 and 16), a ring-shaped protrusion 212 (shown in FIGS. 15 and 16) is formed on the back surface 201 of the wafer 200 corresponding to the peripheral remaining area 204, which is a processing method called TAIKO grinding is performed on the wafer 200 . In addition, the so-called backside 201 of the wafer 200 corresponding to the device area 203 refers to the area on the backside 201 of the wafer 200 that overlaps the device area 203 in the thickness direction of the wafer 200, and the so-called wafer corresponding to the peripheral remaining area 204 The back surface 201 of the wafer 200 refers to the area on the back surface 201 of the wafer 200 that overlaps with the outer peripheral remaining area 204 in the thickness direction of the wafer 200.

如圖4所示，實施方式1的晶圓之加工方法具備：加工準備步驟1001、限定研削步驟1002、位置調整步驟1003、圓形研削步驟1004、精研削步驟1005、及清洗容納步驟1006。As shown in FIG. 4, the wafer processing method of the first embodiment includes a processing preparation step 1001, a limited grinding step 1002, a position adjustment step 1003, a circular grinding step 1004, a finishing grinding step 1005, and a cleaning and containing step 1006.

（加工準備步驟） 圖5是表示在圖4所示的晶圓之加工方法的加工準備步驟中使晶圓的正面與保護構件相向的狀態之立體圖。圖6是表示在圖4所示的晶圓之加工方法的加工準備步驟中在晶圓正面黏貼保護構件的狀態之立體圖。(Processing preparation steps) 5 is a perspective view showing a state where the front surface of the wafer and the protective member are opposed to each other in the processing preparation step of the wafer processing method shown in FIG. 4. 6 is a perspective view showing a state in which a protective member is pasted on the front surface of the wafer in the processing preparation step of the wafer processing method shown in FIG. 4.

加工準備步驟1001是以下步驟：在研削裝置1的卡盤台7保持晶圓200，並在主軸33的下端固定研削輪32、42。在實施方式1中，在加工準備步驟1001中，如圖5所示，使保護構件213與晶圓200的正面205相向後，如圖6所示，在晶圓200的正面205黏貼保護構件213。在實施方式1中，保護構件213被形成為與晶圓200相同大小的圓板狀，且係藉由具有可撓性的合成樹脂或具有剛性的基板所構成。The processing preparation step 1001 is a step of holding the wafer 200 on the chuck table 7 of the grinding device 1 and fixing the grinding wheels 32 and 42 to the lower end of the spindle 33. In the first embodiment, in the processing preparation step 1001, as shown in FIG. 5, the protective member 213 and the front surface 205 of the wafer 200 are placed opposite to each other. As shown in FIG. 6, the protective member 213 is pasted on the front surface 205 of the wafer 200. . In the first embodiment, the protective member 213 is formed in a disc shape having the same size as the wafer 200, and is composed of a flexible synthetic resin or a rigid substrate.

在實施方式1中，在加工準備步驟1001中，操作員將研削輪32、42固定在研削裝置1的各研削單元3、4的主軸33的下端，並將在正面205黏貼有保護構件213的晶圓200以保護構件213朝下的方式容納於卡匣8。在加工準備步驟1001中，藉由操作員，將加工條件登錄於控制單元100，並在裝置本體2設置已容納黏貼有研削前的保護構件213之晶圓200的卡匣8及未容納晶圓200的卡匣9。在加工準備步驟1001中，研削裝置1的控制單元100若從操作者接收加工動作開始指示，則開始加工動作。In the first embodiment, in the processing preparation step 1001, the operator fixes the grinding wheels 32, 42 to the lower end of the spindle 33 of each grinding unit 3, 4 of the grinding device 1, and pastes the protective member 213 on the front surface 205 The wafer 200 is accommodated in the cassette 8 with the protective member 213 facing downward. In the processing preparation step 1001, the operator registers the processing conditions in the control unit 100, and installs the cassette 8 in which the wafer 200 to which the protective member 213 is pasted before grinding and the unaccommodating wafer in the device body 2 200's cassette 9. In the processing preparation step 1001, if the control unit 100 of the grinding apparatus 1 receives a processing operation start instruction from the operator, it starts the processing operation.

在加工動作中，研削裝置1的控制單元100使各研削單元3、4的主軸33繞著旋轉軸38旋轉，在搬出搬入單元13從卡匣8取出1片晶圓200，並往對位單元10搬出。控制單元100在對位單元10進行晶圓200的中心對位，將已與搬送單元11對位之晶圓200的正面205側搬入位於搬入搬出區域301之卡盤台7上。此時，已被搬入卡盤台7的晶圓200被定位在與卡盤台7成為同軸的位置。During the processing operation, the control unit 100 of the grinding device 1 rotates the spindle 33 of each grinding unit 3 and 4 around the rotating shaft 38, and takes out one wafer 200 from the cassette 8 in the unloading and loading unit 13, and moves it to the alignment unit 10 move out. The control unit 100 performs center alignment of the wafer 200 in the alignment unit 10, and carries the front 205 side of the wafer 200 aligned with the transport unit 11 onto the chuck table 7 located in the carry-in and carry-out area 301. At this time, the wafer 200 that has been carried into the chuck table 7 is positioned at a position that is coaxial with the chuck table 7.

在加工準備步驟1001中，研削裝置1的控制單元100是透過保護構件213而將晶圓200的正面205側吸引保持於搬入搬出區域301的卡盤台7，並進入限定研削步驟1002。In the processing preparation step 1001, the control unit 100 of the grinding apparatus 1 sucks and holds the front surface 205 side of the wafer 200 on the chuck table 7 in the carry-in/out area 301 through the protective member 213, and enters the limited grinding step 1002.

（限定研削步驟） 圖7是示意地表示圖4所示的晶圓之加工方法的限定研削步驟剛開始後的粗研削輪與晶圓之俯視圖。圖8是以局部剖面示意地表示使圖7所示的粗研削輪與晶圓抵接的狀態之側視圖。圖9是示意地表示圖4所示的晶圓之加工方法的限定研削步驟結束時的粗研削輪與晶圓之剖面圖。圖10是示意地表示圖9所示的粗研削輪與晶圓之俯視圖。(Limited grinding steps) FIG. 7 is a plan view schematically showing the rough grinding wheel and the wafer immediately after the limited grinding step of the wafer processing method shown in FIG. 4 is started. Fig. 8 is a side view schematically showing a state in which the rough grinding wheel shown in Fig. 7 is brought into contact with the wafer in partial cross-section. 9 is a cross-sectional view schematically showing the rough grinding wheel and the wafer at the end of the limited grinding step of the wafer processing method shown in FIG. 4. Fig. 10 is a plan view schematically showing the rough grinding wheel and the wafer shown in Fig. 9.

限定研削步驟1002是以下步驟：以粗研削輪32研削卡盤台7所保持之晶圓200中排除中央部分後對應於元件區域203之晶圓200的背面201，形成環狀凹部214（圖9及圖10所示），且在晶圓200的背面201形成被環狀凹部214包圍的中央凸部215（圖9及圖10所示）。在限定研削步驟中1002中，研削裝置1的控制單元100會旋轉轉台6，將在搬入搬出區域301保持晶圓200的卡盤台7移動至粗研削區域302，使背面201露出並以轉台6將晶圓200搬送到粗研削區域302。The limiting grinding step 1002 is the following step: grinding the wafer 200 held by the chuck table 7 with the rough grinding wheel 32 to grind the back surface 201 of the wafer 200 corresponding to the element area 203 after excluding the central part, forming a ring-shaped recess 214 (FIG. 9 And FIG. 10), and a central convex portion 215 surrounded by a ring-shaped concave portion 214 is formed on the back surface 201 of the wafer 200 (shown in FIGS. 9 and 10). In the limited grinding step 1002, the control unit 100 of the grinding device 1 rotates the turntable 6 to move the chuck table 7 holding the wafer 200 in the carry-in/unload area 301 to the rough grinding area 302 to expose the back surface 201 and use the turntable 6 The wafer 200 is transferred to the rough grinding area 302.

在限定研削步驟1002中，研削裝置1的控制單元100在滑動移動機構16使粗研削單元3在水平方向移動，如圖7所示，將粗研削單元3的主軸33之旋轉軸38、與轉台6的軸心亦即保持於卡盤台7之晶圓200的中心210，在水平方向空開間隔而配置（亦即，將晶圓200與粗研削輪32定位於成為非同軸之位置）。並且，在限定研削步驟1002中，在俯視中，研削裝置1的控制單元100將保持於卡盤台7之晶圓200的中心210定位在粗研削輪32的研削磨石31的內周側，將卡盤台7繞著軸心旋轉。此外，在實施方式1中，在限定研削步驟1002中，在俯視中，研削裝置1的控制單元100將卡盤台7與粗研削單元3的粗研削輪32在同方向旋轉。In the limited grinding step 1002, the control unit 100 of the grinding device 1 moves the rough grinding unit 3 in the horizontal direction on the sliding movement mechanism 16. As shown in FIG. 7, the rotation axis 38 of the main shaft 33 of the rough grinding unit 3 and the turntable The axis 6 is held at the center 210 of the wafer 200 of the chuck table 7, and is arranged at intervals in the horizontal direction (that is, the wafer 200 and the rough grinding wheel 32 are positioned at non-coaxial positions). In addition, in the limited grinding step 1002, in a plan view, the control unit 100 of the grinding device 1 positions the center 210 of the wafer 200 held by the chuck table 7 on the inner peripheral side of the grinding stone 31 of the rough grinding wheel 32, Rotate the chuck table 7 around the axis. In addition, in the first embodiment, in the limited grinding step 1002, in a plan view, the control unit 100 of the grinding device 1 rotates the chuck table 7 and the rough grinding wheel 32 of the rough grinding unit 3 in the same direction.

在限定研削步驟1002中，研削裝置1的控制單元100使粗研削單元3下降至研削進給單元5，如圖8所示，使粗研削單元3的粗研削輪32的研削磨石31的下表面311抵接晶圓200的背面201，並以加工內容資訊所訂定的研削進給速度使粗研削單元3下降。於是，研削磨石31研削排除背面201的中央部分後對應於元件區域203之晶圓200的背面201，並依序研削對應於元件區域203之晶圓200的背面201的膜202與母材。在限定研削步驟1002中，如圖9所示，若研削裝置1的控制單元100以粗研削單元3從背面201研削至加工內容資訊所訂定的深度216，則進入位置調整步驟1003。In the limited grinding step 1002, the control unit 100 of the grinding device 1 lowers the rough grinding unit 3 to the grinding feed unit 5, as shown in FIG. The surface 311 abuts the back surface 201 of the wafer 200, and the rough grinding unit 3 is lowered at the grinding feed rate set by the processing content information. Then, the grinding stone 31 grinds the back surface 201 of the wafer 200 corresponding to the device area 203 after excluding the center portion of the back surface 201, and sequentially grinds the film 202 and the base material of the back surface 201 of the wafer 200 corresponding to the device area 203. In the limited grinding step 1002, as shown in FIG. 9, if the control unit 100 of the grinding device 1 uses the rough grinding unit 3 to grind from the back surface 201 to the depth 216 set by the processing content information, then the position adjustment step 1003 is entered.

此外，在限定研削步驟1002中，晶圓200與粗研削輪32被定位在成為非同軸的位置，因在俯視中，保持於卡盤台7之晶圓200的中心210被定位在粗研削輪32的研削磨石31的內周側，故在限定研削步驟1002後的晶圓200的背面201中，如圖9及圖10所示，對應元件區域203的晶圓200的背面201形成從背面201凹陷的環狀凹部214，且形成被環狀凹部214包圍的中央凸部215。環狀凹部214的平面形狀被形成為圓環狀，中央凸部215的平面形狀被形成為圓形。環狀凹部214與中央凸部215被形成在與晶圓200成為同軸的位置。並且，在本發明中，因晶圓200的母材是由矽所構成，故在限定研削步驟1002中，只要將粗研削輪32進行研削進給直到至少在環狀凹部214的底面露出母材的程度即可，亦即，只要至少去除接觸研削磨石31的下表面311之膜202即可。In addition, in the limited grinding step 1002, the wafer 200 and the rough grinding wheel 32 are positioned at non-coaxial positions, because in a plan view, the center 210 of the wafer 200 held by the chuck table 7 is positioned on the rough grinding wheel. 32 is the inner peripheral side of the grinding stone 31, so in the back surface 201 of the wafer 200 after the grinding step 1002 is limited, as shown in FIGS. 9 and 10, the back surface 201 of the wafer 200 corresponding to the element area 203 is formed from the back surface The annular concave portion 214 is recessed in 201, and a central convex portion 215 surrounded by the annular concave portion 214 is formed. The planar shape of the annular recess 214 is formed in an annular shape, and the planar shape of the central convex portion 215 is formed in a circular shape. The ring-shaped concave portion 214 and the central convex portion 215 are formed at positions that are coaxial with the wafer 200. Furthermore, in the present invention, since the base material of the wafer 200 is made of silicon, in the limited grinding step 1002, only the rough grinding wheel 32 needs to be ground and fed until the base material is exposed at least on the bottom surface of the annular recess 214 That is, as long as the film 202 contacting the lower surface 311 of the grinding stone 31 is removed at least.

（位置調整步驟） 圖11是以局部剖面表示在圖4所示的晶圓之加工方法的位置調整步驟中使粗研削單元上升並將粗研削輪從晶圓分離的狀態之側視圖。圖12是以局部剖面示意地表示使圖11所示的粗研削輪朝向晶圓的外周緣相對地移動的狀態之側視圖。圖13是示意地表示圖12所示的粗研削輪與晶圓之俯視圖。(Position adjustment steps) 11 is a partial cross-sectional side view showing a state in which the rough grinding unit is raised and the rough grinding wheel is separated from the wafer in the position adjustment step of the wafer processing method shown in FIG. 4. FIG. 12 is a side view schematically showing a state in which the rough grinding wheel shown in FIG. 11 is relatively moved toward the outer periphery of the wafer, with a partial cross-section. Fig. 13 is a plan view schematically showing the rough grinding wheel and the wafer shown in Fig. 12.

位置調整步驟1003是以下步驟：在實施限定研削步驟1002後，將粗研削輪32從晶圓200分離後，使粗研削輪32朝向晶圓200的外周緣相對地移動。在位置調整步驟1003中，如圖11所示，研削裝置1的控制單元100使粗研削單元3上升至研削進給單元5，將粗研削輪32的研削磨石31從保持於卡盤台7之晶圓200分離。The position adjustment step 1003 is the following step: after the limited grinding step 1002 is performed, the rough grinding wheel 32 is separated from the wafer 200 and then the rough grinding wheel 32 is relatively moved toward the outer periphery of the wafer 200. In the position adjustment step 1003, as shown in FIG. 11, the control unit 100 of the grinding device 1 raises the rough grinding unit 3 to the grinding feed unit 5, and removes the grinding stone 31 of the rough grinding wheel 32 from the chuck table 7. The wafer 200 is separated.

在位置調整步驟1003中，研削裝置1的控制單元100在滑動移動機構16將粗研削單元3的粗研削輪32朝向粗研削區域302中保持於卡盤台7之晶圓200的外周緣移動。在實施方式1中，在位置調整步驟1003中，如圖12及圖13所示，研削裝置1的控制單元100將粗研削輪32的一部分的研削磨石31的外緣定位在晶圓200之元件區域203與外周剩餘區域204的邊界上，將另一部分的研削磨石31的下表面311定位在晶圓200的中心210上，並進入圓形研削步驟1004。In the position adjustment step 1003, the control unit 100 of the grinding apparatus 1 moves the rough grinding wheel 32 of the rough grinding unit 3 toward the outer periphery of the wafer 200 held by the chuck table 7 in the rough grinding area 302 in the sliding movement mechanism 16. In the first embodiment, in the position adjustment step 1003, as shown in FIGS. 12 and 13, the control unit 100 of the grinding device 1 positions the outer edge of the grinding stone 31, which is part of the rough grinding wheel 32, on the wafer 200 On the boundary between the device area 203 and the remaining peripheral area 204, the lower surface 311 of another part of the grinding stone 31 is positioned on the center 210 of the wafer 200, and the circular grinding step 1004 is entered.

（圓形研削步驟） 圖14是以局部剖面示意地表示使圖4所示的晶圓之加工方法的圓形研削步驟剛開始後的粗研削輪與晶圓抵接的狀態之側視圖。圖15是以局部剖面示意地表示圖4所示的晶圓之加工方法的圓形研削步驟結束時的粗研削輪與晶圓之側視圖。圖16是示意地表示圖15所示的粗研削輪與晶圓之俯視圖。(Circular grinding step) 14 is a partial cross-sectional side view schematically showing a state in which the rough grinding wheel and the wafer just after the circular grinding step of the wafer processing method shown in FIG. 4 are brought into contact with the wafer. 15 is a partial cross-sectional view schematically showing a side view of the rough grinding wheel and the wafer at the end of the circular grinding step of the wafer processing method shown in FIG. 4. Fig. 16 is a plan view schematically showing the rough grinding wheel and the wafer shown in Fig. 15.

圓形研削步驟1004是以下步驟：在實施位置調整步驟1003後，使用粗研削輪32，研削包含中央凸部215之對應於元件區域203之晶圓200的背面201，去除元件區域203所對應之晶圓200的背面201的中央凸部215且形成圓形凹部211，在對應於外周剩餘區域204之晶圓200的背面201形成環狀凸部212。The circular grinding step 1004 is the following step: after the position adjustment step 1003 is performed, the rough grinding wheel 32 is used to grind the back surface 201 of the wafer 200 corresponding to the element area 203 including the central protrusion 215, and remove the corresponding element area 203 The central convex portion 215 of the back surface 201 of the wafer 200 forms a circular concave portion 211, and an annular convex portion 212 is formed on the back surface 201 of the wafer 200 corresponding to the outer peripheral remaining area 204.

在圓形研削步驟1004中，研削裝置1的控制單元100使粗研削單元3下降至研削進給單元5，如圖14所示，使粗研削單元3的粗研削輪32的研削磨石31的下表面311抵接晶圓200的背面201的環狀凹部214的外周側區域與中央凸部215區域，並以加工內容資訊所訂定的研削進給速度使粗研削單元3下降。於是，研削磨石31將對應於元件區域203之晶圓200的背面201的環狀凹部214的外周側區域與中央凸部215區域進行研削並去除。In the circular grinding step 1004, the control unit 100 of the grinding device 1 lowers the rough grinding unit 3 to the grinding feed unit 5. As shown in FIG. 14, the grinding stone 31 of the rough grinding wheel 32 of the rough grinding unit 3 The lower surface 311 abuts the outer peripheral area of the annular recess 214 and the central convex 215 area of the back surface 201 of the wafer 200, and lowers the rough grinding unit 3 at the grinding feed rate specified by the processing content information. Then, the grinding stone 31 grinds and removes the outer peripheral side area and the central convex portion 215 area of the annular recess 214 on the back surface 201 of the wafer 200 corresponding to the element area 203.

在圓形研削步驟1004中，研削開始時，研削磨石31抵接中央凸部215的角及環狀凹部214的角，將研削磨石31進行修整。在圓形研削步驟1004中，如圖15所示，若研削裝置1的控制單元100以粗研削單元3從背面201研削至比限定研削步驟1002的深度216更深之加工內容資訊所訂定的深度217，則進入精研削步驟1005。In the circular grinding step 1004, at the start of grinding, the grinding grindstone 31 abuts the corners of the central convex portion 215 and the corners of the annular concave portion 214, and the grinding grindstone 31 is trimmed. In the circular grinding step 1004, as shown in FIG. 15, if the control unit 100 of the grinding device 1 uses the rough grinding unit 3 to grind from the back surface 201 to a depth defined by the processing content information that is deeper than the depth 216 that defines the grinding step 1002 217, then enter the step 1005 of fine grinding.

此外，在位置調整步驟1003中，因粗研削輪32的一部分的研削磨石31的外緣被定位在晶圓200之元件區域203與外周剩餘區域204的邊界上，且另一部分的研削磨石31的下表面311被定位在晶圓200的中心210上，故在圓形研削步驟1004後的晶圓200的背面201中，如圖15及圖16所示，對應元件區域203的晶圓200的背面201整體形成圓形凹部211，並在對應於外周剩餘區域204之晶圓200的背面201形成因背面201未被研削而殘留的環狀凸部212。如此，在實施方式1的晶圓之加工方法中，相較於在限定研削步驟1002形成的環狀凹部214，在圓形研削步驟1004形成的圓形凹部211被形成地更深。並且，在實施方式1中，在限定研削步驟1002、位置調整步驟1003及圓形研削步驟1004的期間，定位於粗研削區域302之卡盤台7在同方向旋轉。In addition, in the position adjustment step 1003, the outer edge of a part of the grinding stone 31 of the rough grinding wheel 32 is positioned on the boundary between the element area 203 and the peripheral remaining area 204 of the wafer 200, and the other part of the grinding stone The lower surface 311 of 31 is positioned on the center 210 of the wafer 200, so in the back 201 of the wafer 200 after the circular grinding step 1004, as shown in FIGS. 15 and 16, the wafer 200 corresponding to the device area 203 A circular concave portion 211 is formed on the entire back surface 201 of the wafer, and a ring-shaped convex portion 212 remaining because the back surface 201 has not been ground is formed on the back surface 201 of the wafer 200 corresponding to the outer peripheral remaining area 204. In this way, in the wafer processing method of Embodiment 1, the circular recess 211 formed in the circular grinding step 1004 is formed deeper than the annular recess 214 formed in the limited grinding step 1002. In addition, in the first embodiment, during the limited grinding step 1002, the position adjustment step 1003, and the circular grinding step 1004, the chuck table 7 positioned in the rough grinding area 302 rotates in the same direction.

（精研削步驟） 精研削步驟1005是以下步驟：在實施圓形研削步驟1004後，以精研削輪42更深地研削圓形凹部211。在精研削步驟中1005中，研削裝置1的控制單元100會旋轉轉台6，將保持有在粗研削區域302已實施圓形研削步驟1004的晶圓200之卡盤台7移動至精研削區域303，使背面201露出並以轉台6將晶圓200搬送到精研削區域303。(Leaning steps) The fine grinding step 1005 is the following step: after the circular grinding step 1004 is performed, the round recess 211 is ground deeper with the fine grinding wheel 42. In the fine grinding step 1005, the control unit 100 of the grinding device 1 rotates the turntable 6 to move the chuck table 7 holding the wafer 200 that has been subjected to the circular grinding step 1004 in the rough grinding area 302 to the fine grinding area 303 , The back surface 201 is exposed and the wafer 200 is transferred to the fine grinding area 303 by the turntable 6.

在實施方式1中，在精研削步驟1005中，研削裝置1的控制單元100在滑動移動機構16使精研削單元4在水平方向移動，將精研削輪42的一部分的研削磨石41的外緣定位在晶圓200之元件區域203與外周剩餘區域204的邊界上，將另一部分的研削磨石41的下表面411定位在晶圓200的中心210上，一邊使定位於精研削區域303之卡盤台7在與研削輪42相同的方向旋轉，一邊使精研削單元4下降至研削進給單元5。In the first embodiment, in the fine grinding step 1005, the control unit 100 of the grinding device 1 moves the fine grinding unit 4 in the horizontal direction on the sliding movement mechanism 16 to move a part of the grinding wheel 42 to the outer edge of the grinding stone 41 Positioned on the boundary between the device area 203 of the wafer 200 and the remaining peripheral area 204, and the lower surface 411 of the other part of the grinding stone 41 is positioned on the center 210 of the wafer 200, while positioning the card in the fine grinding area 303 The disk table 7 rotates in the same direction as the grinding wheel 42 while lowering the fine grinding unit 4 to the grinding feed unit 5.

在精研削步驟1005中，研削裝置1的控制單元100以精研削單元4將圓形凹部211的底面研削至加工內容資訊所訂定的深度，之後，使研削單元4上升至研削進給單元5，並進入清洗容納步驟1006。In the fine grinding step 1005, the control unit 100 of the grinding device 1 uses the fine grinding unit 4 to grind the bottom surface of the circular recess 211 to the depth specified by the processing content information, and then raises the grinding unit 4 to the grinding feed unit 5. , And enter the cleaning and containing step 1006.

（清洗容納步驟） 清洗容納步驟1006是以下步驟：在實施精研削步驟1005後，將晶圓200進行清洗並容納至卡匣9。在清洗容納步驟中1006中，研削裝置1的控制單元100會旋轉轉台6，將保持有在精研削區域303已實施精研削步驟1005的晶圓200之卡盤台7移動至搬入搬出區域301，使背面201露出並以轉台6將晶圓200搬送到搬入搬出區域301。如此，晶圓之加工方法是將晶圓200依序搬送至粗研削區域302、精研削區域303、搬入搬出區域301，並依序實施限定研削步驟1002、位置調整步驟1003、圓形研削步驟1004及精研削步驟1005。此外，每當轉台6旋轉120度時，研削裝置1的控制單元100會將研削前的晶圓200搬入至搬入搬出區域301的卡盤台7。(Cleaning and containing steps) The cleaning and storage step 1006 is the following step: after the fine grinding step 1005 is performed, the wafer 200 is cleaned and stored in the cassette 9. In the cleaning and storing step 1006, the control unit 100 of the grinding device 1 rotates the turntable 6 to move the chuck table 7 holding the wafer 200 that has been subjected to the finishing grinding step 1005 in the finishing grinding area 303 to the loading and unloading area 301. The back surface 201 is exposed, and the wafer 200 is transported to the carry-in/out area 301 by the turntable 6. In this way, the wafer processing method is to sequentially transport the wafer 200 to the rough grinding area 302, the fine grinding area 303, and the carry-in/out area 301, and sequentially implement the limited grinding step 1002, the position adjustment step 1003, and the circular grinding step 1004. And the lapping step 1005. In addition, every time the turntable 6 rotates by 120 degrees, the control unit 100 of the grinding apparatus 1 carries the wafer 200 before grinding into the chuck table 7 in the carry-in/out area 301.

在清洗容納步驟1006中，研削裝置1的控制單元100藉由搬送單元11將研削後的晶圓200搬入清洗單元12，以清洗單元12進行清洗，以搬出搬入單元13的搬送手部從晶圓200的保護構件213側保持清洗後的晶圓200，並往卡匣9搬入。此外，在實施方式1中，每當轉台6旋轉120度時，研削裝置1的控制單元100會對定位於粗研削區域302之晶圓200依序實施限定研削步驟1002、位置調整步驟1003及圓形研削步驟1004，對定位於精研削區域303之晶圓200實施精研削步驟1005，將研削後的晶圓200從定位於搬入搬出區域301之卡盤台7搬送至清洗單元12，並將研削前的晶圓200搬送至卡盤台7。若研削裝置1的控制單元100對卡匣8內的全部晶圓200實施研削，則結束加工動作亦即晶圓之加工方法。In the cleaning and accommodating step 1006, the control unit 100 of the grinding apparatus 1 carries the ground wafer 200 into the cleaning unit 12 through the transport unit 11, and cleans the wafer 200 in the cleaning unit 12, so that the transport hand of the transport unit 13 is removed from the wafer. The protective member 213 side of the 200 holds the cleaned wafer 200 and carries it into the cassette 9. In addition, in Embodiment 1, every time the turntable 6 rotates by 120 degrees, the control unit 100 of the grinding device 1 sequentially performs a limited grinding step 1002, a position adjustment step 1003, and a circle on the wafer 200 positioned in the rough grinding area 302. Shape grinding step 1004, perform the fine grinding step 1005 on the wafer 200 positioned in the fine grinding area 303, and transport the polished wafer 200 from the chuck table 7 positioned in the carry-in/out area 301 to the cleaning unit 12, and grind The previous wafer 200 is transported to the chuck table 7. If the control unit 100 of the grinding device 1 grinds all the wafers 200 in the cassette 8, the processing action, that is, the wafer processing method is ended.

如上所述，在實施方式1的晶圓之加工方法中，即使是難以研削之難研削性的晶圓200，亦在研削步驟1002中，將進行研削的面積限定成比以往的TAIKO研削更狹窄並進行在中央殘留中央凸部215的研削後，在圓形研削步驟1004中研削包含中央凸部215之對應於元件區域203整體之晶圓200的背面201。因此，可使晶圓之加工方法的限定研削步驟1002及圓形研削步驟1004各自的研削範圍比以往的TAIKO研削更狹窄，可減少對研削磨石31施加的負擔。其結果，晶圓之加工方法發揮以下效果：可抑制主軸馬達37的負荷電流值超出規定值，能穩定地實施在晶圓200的背面201形成對應於元件區域203之圓形凹部211與對應於外周剩餘區域204之環狀凸部212的所謂TAIKO研削。As described above, in the wafer processing method of the first embodiment, even if it is a difficult-to-grind wafer 200 that is difficult to grind, in the grinding step 1002, the area to be ground is limited to be narrower than the conventional TAIKO grinding. After grinding the center convex portion 215 remaining in the center, in a circular grinding step 1004, the back surface 201 of the wafer 200 including the center convex portion 215 corresponding to the entire device region 203 is ground. Therefore, the grinding range of the limited grinding step 1002 and the circular grinding step 1004 of the wafer processing method can be made narrower than the conventional TAIKO grinding, and the burden on the grinding stone 31 can be reduced. As a result, the wafer processing method exerts the following effects: the load current value of the spindle motor 37 can be suppressed from exceeding a predetermined value, and it can be stably implemented to form a circular recess 211 corresponding to the element region 203 on the back surface 201 of the wafer 200 and The so-called TAIKO grinding of the annular convex portion 212 of the outer peripheral remaining area 204.

並且，晶圓之加工方法在圓形研削步驟1004中，在研削中央凸部215時，因研削磨石31碰撞中央凸部215的角及環狀凹部214的角，故亦能獲得修整效果，而亦發揮良好地保持研削狀態的效果。In addition, the wafer processing method in the circular grinding step 1004, when grinding the central convex portion 215, because the grinding stone 31 collides with the corners of the central convex portion 215 and the corners of the annular concave portion 214, the dressing effect can also be obtained. It also exerts a good effect of maintaining the grinding state.

[變形例] 基於圖式說明本發明的實施方式1的變形例的晶圓之加工方法。圖17是示意地表示在實施方式1的變形例的晶圓之加工方法的限定研削步驟中最初形成環狀凹部及中央凸部的狀態之剖面圖。此外，圖17中對與實施方式1相同的部分標示相同的符號並省略說明。[Modifications] A method of processing a wafer according to a modification of the first embodiment of the present invention will be described based on the drawings. FIG. 17 is a cross-sectional view schematically showing a state in which the ring-shaped concave portion and the central convex portion are first formed in the limited grinding step of the wafer processing method of the modification of the first embodiment. In addition, in FIG. 17, the same parts as those in the first embodiment are designated by the same reference numerals, and the description thereof is omitted.

實施方式1的變形例的晶圓之加工方法，是一邊將粗研削輪32相對於晶圓200的相對位置從靠近中心210的位置緩緩變更到外周緣的位置，一邊實施多次的限定研削步驟1002，而在背面201形成環狀凹部214與中央凸部215。此外，圖17係表示在限定研削步驟1002中，將粗研削輪32與晶圓200定位在成為同軸的位置而最初形成環狀凹部214與中央凸部215的例子。此外，在本發明中，在最初形成環狀凹部214與中央凸部215時，並非如圖17所示般限定於將粗研削輪32與晶圓200定位在成為同軸的位置，只要一邊將粗研削輪32相對於晶圓200的相對位置從靠近中心210的位置緩緩變更到外周緣的位置，一邊實施多次的限定研削步驟1002即可。The wafer processing method of the modification of the first embodiment is to gradually change the relative position of the rough grinding wheel 32 with respect to the wafer 200 from a position close to the center 210 to a position on the outer periphery, while performing limited grinding multiple times. In step 1002, an annular concave portion 214 and a central convex portion 215 are formed on the back surface 201. In addition, FIG. 17 shows an example in which the rough grinding wheel 32 and the wafer 200 are positioned to be coaxial in the limited grinding step 1002 to form the ring-shaped concave portion 214 and the central convex portion 215 first. In addition, in the present invention, when initially forming the annular recess 214 and the central protrusion 215, it is not limited to positioning the rough grinding wheel 32 and the wafer 200 at a coaxial position as shown in FIG. The relative position of the grinding wheel 32 with respect to the wafer 200 is gradually changed from a position close to the center 210 to a position on the outer periphery, and the limited grinding step 1002 may be performed multiple times.

圖17所示的變形例的晶圓之加工方法因是一邊將粗研削輪32相對於晶圓200的相對位置從靠近中心210的位置緩緩變更到外周緣的位置，一邊實施多次的限定研削步驟1002，故相較於實施方式，可更為減少對研削磨石31施加的負擔。The wafer processing method of the modified example shown in FIG. 17 is because the relative position of the rough grinding wheel 32 with respect to the wafer 200 is gradually changed from a position close to the center 210 to a position on the outer periphery, and multiple restrictions are implemented. In the grinding step 1002, compared with the embodiment, the burden imposed on the grinding stone 31 can be further reduced.

此外，本發明不限定於上述實施方式。亦即，在不脫離本發明的骨幹的範圍可進行各種變形並實施。在上述的實施方式1中，難研削性的晶圓200的母材係由矽所構成，且晶圓200在外表面形成有膜202，但本發明並不限定於此。例如，在本發明中，難研削性的晶圓200的母材亦可由藍寶石或玻璃等所構成，晶圓200亦可為所謂高度摻雜品的晶圓，其藉由混入摻雜材（例如，硼：B、磷：P、錫：Sn或砷：As）而將電阻率調整成例如0.001Ωcm以上且0.1Ωcm以下。在此等難研削性的晶圓200形成圓形凹部211與環狀凸部212時，本發明的晶圓之加工方法只要使用粗研削單元3與精研削單元4中至少一者並實施限定研削步驟1002、位置調整步驟1003及圓形研削步驟1004即可。In addition, the present invention is not limited to the above-mentioned embodiment. That is, various modifications and implementations can be made without departing from the backbone of the present invention. In the first embodiment described above, the base material of the difficult-to-grind wafer 200 is made of silicon, and the film 202 is formed on the outer surface of the wafer 200, but the present invention is not limited to this. For example, in the present invention, the base material of the difficult-to-grind wafer 200 may also be composed of sapphire or glass, and the wafer 200 may also be a so-called highly doped wafer, which is mixed with dopant materials (such as , Boron: B, Phosphorus: P, Tin: Sn, or Arsenic: As) and the resistivity is adjusted to, for example, 0.001 Ωcm or more and 0.1 Ωcm or less. When the round concave portion 211 and the annular convex portion 212 are formed on the difficult-to-grind wafer 200, the wafer processing method of the present invention only needs to use at least one of the rough grinding unit 3 and the fine grinding unit 4 and perform limited grinding. Step 1002, position adjustment step 1003, and circular grinding step 1004 are sufficient.

7:卡盤台 32:粗研削輪（研削輪） 33:主軸 35:外徑（直徑） 38:旋轉軸 41:精研削用的研削磨石（研削磨石） 42:精研削輪（研削輪） 71:保持面 200:晶圓 201:背面 203:元件區域 204:外周剩餘區域 205:正面 206:分割預定線 207:元件 208:半徑 211:圓形凹部 212:環狀凸部 214:環狀凹部 215:中央凸部 1001:加工準備步驟 1002:限定研削步驟 1003:位置調整步驟 1004:圓形研削步驟 1005:精研削步驟7: Chuck table 32: Rough grinding wheel (grinding wheel) 33: Spindle 35: Outer diameter (diameter) 38: Rotation axis 41: Grinding stone for fine grinding (grinding stone) 42: Precision grinding wheel (grinding wheel) 71: keep face 200: Wafer 201: Back 203: component area 204: Peripheral Remaining Area 205: front 206: Dividing planned line 207: Components 208: Radius 211: round recess 212: Ring convex 214: Ring recess 215: Central convex 1001: Processing preparation steps 1002: Limited grinding steps 1003: Position adjustment steps 1004: Circular grinding step 1005: Fine grinding steps

圖1是實施方式1的晶圓之加工方法的加工對象的晶圓之立體圖。 圖2是表示實施方式1的晶圓之加工方法所使用的研削裝置的構成例之立體圖。 圖3是由下方表示圖2所示的研削裝置的粗研削單元及精研削單元之立體圖。 圖4是表示實施方式1的晶圓之加工方法的流程之流程圖。 圖5是表示在圖4所示的晶圓之加工方法的加工準備步驟中使晶圓正面與保護構件相向的狀態之立體圖。 圖6是表示在圖4所示的晶圓之加工方法的加工準備步驟中在晶圓正面黏貼保護構件的狀態之立體圖。 圖7是示意地表示圖4所示的晶圓之加工方法的限定研削步驟剛開始後的粗研削輪與晶圓之俯視圖。 圖8是以局部剖面示意地表示使圖7所示的粗研削輪與晶圓抵接的狀態之側視圖。 圖9是示意地表示圖4所示的晶圓之加工方法的限定研削步驟結束時的粗研削輪與晶圓之剖面圖。 圖10是示意地表示圖9所示的粗研削輪與晶圓之俯視圖。 圖11是以局部剖面表示在圖4所示的晶圓之加工方法的位置調整步驟中使粗研削單元上升並將粗研削輪從晶圓分離的狀態之側視圖。 圖12是以局部剖面示意地表示使圖11所示的粗研削輪朝向晶圓的外周緣相對地移動的狀態之側視圖。 圖13是示意地表示圖12所示的粗研削輪與晶圓之俯視圖。 圖14是以局部剖面示意地表示使圖4所示的晶圓之加工方法的圓形研削步驟剛開始後的粗研削輪與晶圓抵接的狀態之側視圖。 圖15是以局部剖面示意地表示圖4所示的晶圓之加工方法的圓形研削步驟結束時的粗研削輪與晶圓之側視圖。 圖16是示意地表示圖15所示的粗研削輪與晶圓之俯視圖。 圖17是示意地表示在實施方式1的變形例的晶圓之加工方法的限定研削步驟中最初形成環狀凹部及中央凸部的狀態之剖面圖。FIG. 1 is a perspective view of a wafer to be processed in the wafer processing method of Embodiment 1. FIG. 2 is a perspective view showing a configuration example of a grinding device used in the wafer processing method of Embodiment 1. FIG. 3 is a perspective view showing the rough grinding unit and the fine grinding unit of the grinding device shown in FIG. 2 from below. 4 is a flowchart showing the flow of the wafer processing method of the first embodiment. 5 is a perspective view showing a state where the front surface of the wafer and the protective member are opposed to each other in the processing preparation step of the wafer processing method shown in FIG. 4. 6 is a perspective view showing a state in which a protective member is pasted on the front surface of the wafer in the processing preparation step of the wafer processing method shown in FIG. 4. FIG. 7 is a plan view schematically showing the rough grinding wheel and the wafer immediately after the limited grinding step of the wafer processing method shown in FIG. 4 is started. Fig. 8 is a side view schematically showing a state in which the rough grinding wheel shown in Fig. 7 is brought into contact with the wafer in partial cross-section. 9 is a cross-sectional view schematically showing the rough grinding wheel and the wafer at the end of the limited grinding step of the wafer processing method shown in FIG. 4. Fig. 10 is a plan view schematically showing the rough grinding wheel and the wafer shown in Fig. 9. 11 is a partial cross-sectional side view showing a state in which the rough grinding unit is raised and the rough grinding wheel is separated from the wafer in the position adjustment step of the wafer processing method shown in FIG. 4. FIG. 12 is a side view schematically showing a state in which the rough grinding wheel shown in FIG. 11 is relatively moved toward the outer periphery of the wafer, with a partial cross-section. Fig. 13 is a plan view schematically showing the rough grinding wheel and the wafer shown in Fig. 12. 14 is a partial cross-sectional side view schematically showing a state in which the rough grinding wheel and the wafer just after the circular grinding step of the wafer processing method shown in FIG. 4 are brought into contact with the wafer. 15 is a partial cross-sectional view schematically showing a side view of the rough grinding wheel and the wafer at the end of the circular grinding step of the wafer processing method shown in FIG. 4. Fig. 16 is a plan view schematically showing the rough grinding wheel and the wafer shown in Fig. 15. FIG. 17 is a cross-sectional view schematically showing a state in which the ring-shaped concave portion and the central convex portion are first formed in the limited grinding step of the wafer processing method of the modification of the first embodiment.

1001:加工準備步驟 1001: Processing preparation steps

1002:限定研削步驟 1002: Limited grinding steps

1003:位置調整步驟 1003: Position adjustment steps

1004:圓形研削步驟 1004: Circular grinding step

1005:精研削步驟 1005: Fine grinding steps

1006:清洗容納步驟 1006: Washing and containing steps

Claims (3)

一種晶圓之加工方法，該晶圓在正面具有：元件區域，其在由互相交叉的多條分割預定線所劃分之各區域形成有元件；以及外周剩餘區域，其圍繞該元件區域， 該晶圓之加工方法具備： 加工準備步驟，其具有保持晶圓的保持面並以能旋轉的卡盤台保持晶圓，在垂直於該保持面的旋轉軸之主軸的下端固定研削輪，該研削輪的直徑相當於晶圓的半徑； 限定研削步驟，其以該研削輪研削該卡盤台所保持之晶圓中排除中央部分後對應於元件區域之晶圓的背面，形成環狀凹部且在晶圓的背面形成被該環狀凹部包圍的中央凸部； 位置調整步驟，其在實施該限定研削步驟後，將該研削輪從該晶圓分離後，使該研削輪朝向晶圓的外周緣相對地移動；以及 圓形研削步驟，其在實施該位置調整步驟後，使用該研削輪，研削包含該中央凸部之對應於該元件區域之晶圓的背面，去除該元件區域所對應之晶圓的背面的該中央凸部而形成圓形凹部，在對應於該外周剩餘區域之晶圓的背面形成環狀凸部。A method for processing a wafer, the wafer has on the front side: an element area in which elements are formed in each area divided by a plurality of intersecting predetermined dividing lines; and a peripheral remaining area that surrounds the element area, The wafer processing method includes: The processing preparation step has a holding surface for holding the wafer and holding the wafer with a rotatable chuck table. A grinding wheel is fixed at the lower end of the main shaft of the rotation axis perpendicular to the holding surface. The diameter of the grinding wheel is equivalent to that of the wafer Radius of A limited grinding step, which uses the grinding wheel to grind the back surface of the wafer corresponding to the element area after excluding the central part from the wafer held by the chuck table, forming a ring-shaped recess and forming a ring-shaped recess on the back side of the wafer to be surrounded by the ring-shaped recess The central convex part of A position adjustment step, which, after performing the limited grinding step, separates the grinding wheel from the wafer, and relatively moves the grinding wheel toward the outer periphery of the wafer; and A circular grinding step, which uses the grinding wheel after performing the position adjustment step to grind the back surface of the wafer corresponding to the device area including the central protrusion, and remove the back surface of the wafer corresponding to the device area The central convex portion forms a circular concave portion, and an annular convex portion is formed on the back surface of the wafer corresponding to the remaining area of the outer periphery. 如請求項1之晶圓之加工方法，其中，具備：精研削步驟，其在實施該圓形研削步驟後，以具有研削磨石的精研削輪更深地研削該圓形凹部，該研削磨石係以結合劑固定比該研削輪更細的磨粒而成。The wafer processing method of claim 1, wherein the method includes: a fine grinding step, which after the circular grinding step is performed, the circular concave portion is grind more deeply with a fine grinding wheel with a grinding grindstone, and the grinding grindstone It is made by fixing abrasive grains finer than the grinding wheel with a bonding agent. 如請求項1或2之晶圓之加工方法，其中，相較於在該限定研削步驟形成的該環狀凹部，在該圓形研削步驟形成的該圓形凹部被形成地更深。The wafer processing method of claim 1 or 2, wherein the circular recess formed in the circular grinding step is formed deeper than the annular recess formed in the limited grinding step.
TW110104710A 2020-02-20 2021-02-08 Processing method of wafer to stably perform the so-called TAIKO grinding in which a circular concave portion corresponding to a device region and an annular convex portion corresponding to an outer peripheral surplus region are formed on the back surface of a wafer TW202133254A (en)

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