TW202133254A - Processing method of wafer to stably perform the so-called TAIKO grinding in which a circular concave portion corresponding to a device region and an annular convex portion corresponding to an outer peripheral surplus region are formed on the back surface of a wafer - Google Patents
Processing method of wafer to stably perform the so-called TAIKO grinding in which a circular concave portion corresponding to a device region and an annular convex portion corresponding to an outer peripheral surplus region are formed on the back surface of a wafer Download PDFInfo
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- 230000002093 peripheral effect Effects 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 5
- 239000006061 abrasive grain Substances 0.000 claims description 4
- 239000007767 bonding agent Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 229
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- 238000004140 cleaning Methods 0.000 description 13
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- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
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- 239000004065 semiconductor Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
- B24B19/02—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0069—Other grinding machines or devices with means for feeding the work-pieces to the grinding tool, e.g. turntables, transfer means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/02—Frames; Beds; Carriages
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/20—Drives or gearings; Equipment therefor relating to feed movement
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
本發明關於一種晶圓之加工方法,特別是進行所謂TAIKO(註冊商標)研削之晶圓之加工方法。The present invention relates to a wafer processing method, especially a wafer processing method for so-called TAIKO (registered trademark) grinding.
半導體晶圓朝輕薄短小化進展,形成有半導體元件的晶圓被研削加工至厚度100µm以下。研削後的晶圓會因發生在研削面的研削變形而發生翹曲。因在發生翹曲的晶圓背面非常難以進行金屬等的成膜,故僅研削排除晶圓的外周緣之區域,並使用所謂TAIKO研削技術(例如,參閱專利文獻1及專利文獻2),其在晶圓的背面形成對應於元件區域之圓形凹部、與對應於外周剩餘區域之環狀凸部。
[習知技術文獻]
[專利文獻]Semiconductor wafers are becoming lighter, thinner, shorter and smaller, and wafers on which semiconductor elements are formed are ground to a thickness of 100 µm or less. The wafer after grinding will warp due to the grinding deformation that occurs on the grinding surface. Since it is very difficult to form a film of metal or the like on the backside of the warped wafer, only the area excluding the outer periphery of the wafer is ground, and the so-called TAIKO grinding technology is used (for example, refer to
[專利文獻1]日本特許第5390740號公報 [專利文獻2]日本特許第4758222號公報[Patent Document 1] Japanese Patent No. 5390740 [Patent Document 2] Japanese Patent No. 4758222
[發明所欲解決的課題] 在TAIKO研削中,因使用直徑小於晶圓的研削輪,故相較於直徑與晶圓同等或大於晶圓之一般研削輪,每一個研削磨石的去除量相對地變大,有時無法穩定地實施TAIKO研削。又,即使以相同旋轉數旋轉,也會因直徑小而難以提升旋轉速度,此亦成為同樣傾向的原因。[The problem to be solved by the invention] In TAIKO grinding, because a grinding wheel with a diameter smaller than a wafer is used, compared to a general grinding wheel with a diameter equal to or larger than a wafer, the removal amount of each grinding stone is relatively large, and sometimes it is not stable. Implementation of TAIKO grinding. In addition, even if it is rotated at the same number of rotations, it is difficult to increase the rotation speed due to the small diameter, which also causes the same tendency.
尤其,形成於背面的氧化膜或氮化膜等係難以研削,有時主軸馬達的負荷電流值會超過規定值,而無法穩定地實施TAIKO研削。並且,所謂高度摻雜晶圓(high-doped wafer)亦有同樣的傾向。In particular, the oxide film or nitride film formed on the back surface is difficult to grind, and the load current value of the spindle motor may exceed a predetermined value, and TAIKO grinding cannot be stably performed. In addition, so-called high-doped wafers have the same tendency.
本發明之目的在於提供一種晶圓之加工方法,其能穩定地實施在晶圓的背面形成對應於元件區域之圓形凹部與對應於外周剩餘區域之環狀凸部的所謂TAIKO研削。The object of the present invention is to provide a wafer processing method that can stably perform the so-called TAIKO grinding of forming circular recesses corresponding to the element area and annular protrusions corresponding to the remaining area of the outer periphery on the back surface of the wafer.
[解決課題的技術手段] 為了解決上述課題並達成目的,本發明的晶圓之加工方法,其在所述晶圓的正面具有:元件區域,其在由互相交叉的多條分割預定線所劃分之各區域形成有元件;以及外周剩餘區域,其圍繞該元件區域,所述晶圓之加工方法的特徵在於,具備:加工準備步驟,其具有保持晶圓的保持面並以能旋轉的卡盤台保持晶圓,在垂直於該保持面的旋轉軸之主軸的下端固定研削輪,所述研削輪的直徑相當於晶圓的半徑;限定研削步驟,其以該研削輪研削該卡盤台所保持之晶圓中排除中央部分後對應於元件區域之晶圓的背面,形成環狀凹部且在晶圓的背面形成被該環狀凹部包圍的中央凸部;位置調整步驟,其在實施該限定研削步驟後,將該研削輪從該晶圓分離後,使該研削輪朝向晶圓的外周緣相對地移動;以及圓形研削步驟,其在實施該位置調整步驟後,使用該研削輪,研削包含該中央凸部之對應於該元件區域之晶圓的背面,去除該元件區域所對應之晶圓的背面的該中央凸部而形成圓形凹部,在對應於該外周剩餘區域之晶圓的背面形成環狀凸部。[Technical means to solve the problem] In order to solve the above-mentioned problems and achieve the objective, the wafer processing method of the present invention has on the front side of the wafer: a device area in which a device is formed in each area divided by a plurality of intersecting predetermined dividing lines; And the remaining area on the outer periphery, which surrounds the device area, and the method for processing the wafer is characterized by comprising: a processing preparation step having a holding surface for holding the wafer and holding the wafer with a rotatable chuck table. A grinding wheel is fixed at the lower end of the main shaft of the rotating shaft of the holding surface, the diameter of the grinding wheel is equivalent to the radius of the wafer; the grinding step is defined, and the center part of the wafer held by the chuck table is eliminated by the grinding wheel. Then, corresponding to the back surface of the wafer in the element area, a ring-shaped recess is formed and a central convex portion surrounded by the ring-shaped recess is formed on the back side of the wafer; After being separated from the wafer, the grinding wheel is relatively moved toward the outer periphery of the wafer; and a circular grinding step, which after performing the position adjustment step, uses the grinding wheel to grind the center convex portion corresponding to the On the backside of the wafer in the device area, the central convex portion of the backside of the wafer corresponding to the device area is removed to form a circular concave portion, and a ring-shaped convex portion is formed on the backside of the wafer corresponding to the peripheral remaining area.
在所述晶圓之加工方法中,亦可具備:精研削步驟,其在實施該圓形研削步驟後,以具有研削磨石的精研削輪更深地研削該圓形凹部,所述研削磨石係以結合劑固定比該研削輪更細的磨粒而成。The wafer processing method may also include: a fine grinding step, which after the circular grinding step is performed, the circular recessed portion is grind more deeply with a fine grinding wheel with a grinding stone, the grinding stone It is made by fixing abrasive grains finer than the grinding wheel with a bonding agent.
在所述晶圓之加工方法中,相較於在該限定研削步驟形成的該環狀凹部,在該圓形研削步驟形成的該圓形凹部被形成地更深。In the wafer processing method, the circular recess formed in the circular grinding step is formed deeper than the annular recess formed in the limited grinding step.
[發明功效] 本案發明的晶圓之加工方法,發揮以下效果:能穩定地實施在晶圓的背面形成對應於元件區域之圓形凹部與對應於外周剩餘區域之環狀凸部的所謂TAIKO研削。[Efficacy of invention] The wafer processing method of the present invention has the effect of stably performing so-called TAIKO grinding in which circular recesses corresponding to the element area and ring-shaped protrusions corresponding to the remaining area of the outer periphery can be formed on the back surface of the wafer.
參閱圖式詳細說明用於實施本發明的方式(實施方式)。本發明並不受限於以下的實施方式所記載的內容。並且,在以下所記載的構成要素中,包含本發明所屬技術領域中具有通常知識者可輕易思及者、實質上相同者。再者,能將以下所記載的構成進行適當組合。並且,在不脫離本發明要旨的範圍內可進行構成的各種省略、取代或變更。The mode (embodiment) for implementing the present invention will be described in detail with reference to the drawings. The present invention is not limited to the content described in the following embodiments. In addition, the constituent elements described below include those that can be easily thought of by those having ordinary knowledge in the technical field to which the present invention pertains, and those that are substantially the same. In addition, the configurations described below can be appropriately combined. In addition, various omissions, substitutions, or changes in the configuration can be made without departing from the scope of the present invention.
[實施方式1]
基於圖式說明本發明的實施方式1的晶圓之加工方法。圖1是實施方式1的晶圓之加工方法的加工對象的晶圓之立體圖。圖2是表示實施方式1的晶圓之加工方法所使用的研削裝置的構成例之立體圖。圖3是由下方表示圖2所示的研削裝置的粗研削單元及精研削單元之立體圖。圖4是表示實施方式1的晶圓之加工方法的流程之流程圖。[Embodiment 1]
The wafer processing method of
實施方式1的晶圓之加工方法是加工圖1所示的晶圓200之方法。實施方式1的晶圓之加工方法的加工對象亦即晶圓200,是以矽為母材之圓板狀的半導體晶圓或以藍寶石、SiC(碳化矽)等為母材之光學元件晶圓等晶圓。在實施方式1中,晶圓200的圓盤狀的母材是由矽所構成,並至少在背面201側形成有氧化膜或氮化膜等膜202。The wafer processing method of the first embodiment is a method of processing the
在實施方式1中,晶圓200的背面201側形成有膜202。晶圓200因比起未形成膜202的晶圓更多形成了膜202,故相較於母材係由矽所構成且較未形成膜202的晶圓,背面201側會更難研削(亦即,為難研削性的晶圓)。In the first embodiment, the
如圖1所示,晶圓200在正面205具有:元件區域203、與圍繞元件區域203的外周剩餘區域204。元件區域203在由互相正交的多條分割預定線206所劃分之各區域形成有元件207。元件207為IC(Integrated Circuit,積體電路)或LSI(Large Scale Integration,大型積體電路)等積體電路。此外,外周剩餘區域204係晶圓200的正面205中圍繞元件區域203且未形成元件207之區域。As shown in FIG. 1, the
接著,說明在實施方式1的晶圓之加工方法所使用的圖2所示的研削裝置1。研削裝置1為研削(相當於加工)晶圓200的背面201之加工裝置。如圖2所示,研削裝置1主要具備:裝置本體2;粗研削單元3(相當於研削單元);精研削單元4(相當於研削單元);研削進給單元5;轉台6;設置在轉台6上的多個(在實施方式1中為3個)卡盤台7;卡匣8、9;對位單元10;搬送單元11;清洗單元12;搬出搬入單元13;以及控制單元100。Next, the
轉台6為設於裝置本體2的上表面之圓盤狀的工作台,被設置成能在水平面內旋轉,並在預定的時間點被旋轉驅動。在此轉台6上,例如,以例如120度的相位角等間隔地配設3個卡盤台7。此等3個卡盤台7係在保持面71具備真空卡盤的卡盤台構造,晶圓200被載置於保持面71上,並吸引保持晶圓200。此等卡盤台7在研削時會繞著與鉛直方向亦即Z軸方向平行的軸心,並藉由旋轉驅動機構而在水平面內旋轉驅動。如此,卡盤台7具有保持晶圓200的保持面71,並能繞著軸心旋轉。The
卡盤台7藉由轉台6的旋轉,而依序被移動至搬入搬出區域301、粗研削區域302、精研削區域303、搬入搬出區域301。The chuck table 7 is moved to the carry-in/out
此外,搬入搬出區域301是將晶圓200搬入搬出卡盤台7的區域,粗研削區域302是以粗研削單元3將保持於卡盤台7之晶圓200進行粗研削(相當於研削)的區域,精研削區域303是以精研削單元4將保持於卡盤台7之晶圓200進行精研削(相當於研削)的區域。In addition, the carry-in and carry-out
粗研削單元3裝設具備粗研削用的研削磨石31之粗研削用的粗研削輪32,且是將粗研削區域302中保持於卡盤台7的保持面71之晶圓200的背面201進行粗研削之研削單元。精研削單元4裝設具備精研削用的研削磨石41之精研削用的精研削輪42,且是將精研削區域303中保持於卡盤台7的保持面71之晶圓200的背面201進行精研削之研削單元。此外,研削單元3、4因構成大致相同,故以下對於相同部分標示相同符號並進行說明。The
如圖3所示,粗研削單元3及精研削單元4是將研削輪32、42裝設於主軸33的下端。研削輪32、42具有:圓環狀的環狀基台34、以及固定於環狀基台34的下表面341之多個研削磨石31、41。研削磨石31、41係在環狀基台34的下表面341的外緣部被排列在周方向。多個研削磨石31、41的下表面311、411形成圓環狀。研削磨石31、41是以結合劑固定磨粒而成。精研削輪42的研削磨石41之磨粒比粗研削輪32的研削磨石31之磨粒更細。As shown in FIG. 3, the
在實施方式1中,研削輪32、42的多個研削磨石31、41的下表面311、411所形成之圓環狀的外徑35(相當於研削輪32、42的直徑)與晶圓200的半徑208相等。在本發明中,將研削輪32、42的多個研削磨石31、41的下表面311、411所形成之圓環狀的外徑35與晶圓200的半徑208相等一事,稱為研削輪32、42的直徑亦即外徑相當於晶圓200的半徑208。In the first embodiment, the annular outer diameter 35 (corresponding to the diameter of the
主軸33是繞著與垂直於保持面71的Z軸方向平行之旋轉軸38旋轉自如地被容納在主軸外殼36(圖2所示)內,並藉由已安裝在主軸外殼36的主軸馬達37(圖2所示)而繞著軸心旋轉。主軸33被形成為圓柱狀,在下端設有用於裝設研削輪32、42的輪架39。輪架39從主軸33的下端在外周方向遍及全周地突出,外周面的平面形狀被形成為圓形。輪架39在下表面391重疊環狀基台34的上表面,並藉由未圖示的螺栓固定研削輪32、42。主軸33與輪架39被配置在互相成為同軸的位置。The
研削單元3、4藉由主軸馬達37而使主軸33及研削輪32、42繞著旋轉軸38旋轉,且一邊將研削水供給至研削區域302、303中保持於卡盤台7之晶圓200的背面201,一邊藉由研削進給單元5將研削磨石31、41以預定的進給速度接近卡盤台7,藉此將晶圓200的背面201進行粗研削或精研削。The grinding
研削進給單元5是使研削單元3、4在Z軸方向移動之單元。在實施方式1中,研削進給單元5設有立設柱21,立設柱21是從裝置本體2之與水平方向平行的Y軸方向的一端部所立設。研削進給單元5具備:習知的滾珠螺桿,其被設為繞著軸心旋轉自如;習知的馬達,其使滾珠螺桿繞著軸心旋轉;及習知的導軌,其將各研削單元3、4的主軸外殼36支撐成在Z軸方向移動自如。The grinding
此外,在實施方式1中,粗研削單元3及精研削單元4的研削輪32、42的旋轉中心亦即旋轉軸38與卡盤台7的旋轉中心亦即軸心係互相在水平方向空開間隔並平行配置,且遍及研削磨石31、41通過保持於卡盤台7之晶圓200的背面201的中心210或中心210附近之位置、以及輪架39與研削區域302、303的卡盤台7成為同軸之位置,並藉由滑動移動機構16,每個研削進給單元5及每個立設柱21沿著水平方向移動。滑動移動單元16具備:習知的滾珠螺桿,其被設為繞著軸心旋轉自如;習知的馬達,其使滾珠螺桿繞著軸心旋轉;以及習知的導軌,其將支撐各研削單元3、4之立設柱21支撐成在水平方向移動自如。In addition, in the first embodiment, the rotation centers of the grinding
卡匣8、9是具有多個槽且用於容納晶圓200之容納容器。其中,卡匣8容納研削前的晶圓200,卡匣9容納研削後的晶圓200。並且,對位單元10是用於暫置從卡匣8取出的晶圓200並進行其中心對位之工作台。The
搬送單元11設有2個。2個搬送單元11具有吸附晶圓200之吸附墊。其中一個搬送單元11將已被對位單元10對位之研削前的晶圓200吸附保持並搬入位於搬入搬出區域301之卡盤台7上。另一個搬送單元11將位於搬入搬出區域301之保持於卡盤台7上之研削後的晶圓200吸附保持並搬出至清洗單元12。Two
搬出搬入單元13例如是具備U字型手部131的拾取機器人,藉由U字型手部131將晶圓200吸附保持並搬送。具體而言,搬出搬入單元13將研削前的晶圓200從卡匣8取出,並往對位單元10搬出,且將研削後的晶圓200從清洗單元12取出,並往卡匣9搬入。清洗單元12清洗研削後的晶圓200,去除附著在經研削的背面201之研削屑等污染物。The carry-out and carry-in
控制單元100是分別控制構成研削裝置1的上述各構成要素之單元。亦即,控制單元100是使研削裝置1執行對於晶圓200之研削動作的單元。控制單元100是具有下述裝置的電腦:運算處理裝置,其具有如CPU(central processing unit,中央處理器)般的微處理器;記憶裝置,其具有如ROM(read only memory,唯讀記憶體)或RAM(random access memory,隨機存取記憶體)般的記憶體;以及輸入輸出界面裝置。The
控制單元100的運算處理器依照記憶於記憶裝置的電腦程式而實施運算處理,並透過輸入輸出界面裝置,將用於控制研削裝置1的控制訊號輸出至研削裝置1的上述構成要素。並且,控制裝置100連接:顯示單元,其係藉由顯示加工動作的狀態或影像等的液晶顯示裝置等所構成;以及輸入單元,其在操作員登錄加工內容資訊等時使用。輸入單元係由設於顯示單元的觸控面板、與鍵盤等之中至少一個所構成。The arithmetic processor of the
實施方式1的晶圓之加工方法係使用研削輪32、42,研削對應於元件區域203之晶圓200的背面201,在元件區域203所對應之晶圓200的背面201形成圓形凹部211(圖15、16所示),在對應於外周剩餘區域204之晶圓200的背面201形成環狀凸部212(圖15、16所示),亦即對晶圓200實施所謂TAIKO研削之加工方法。此外,所謂對應於元件區域203之晶圓200的背面201,是指晶圓200的背面201中與元件區域203在晶圓200的厚度方向重疊之區域,所謂對應於外周剩餘區域204之晶圓200的背面201,是指晶圓200的背面201中與外周剩餘區域204在晶圓200的厚度方向重疊之區域。The wafer processing method of
如圖4所示,實施方式1的晶圓之加工方法具備:加工準備步驟1001、限定研削步驟1002、位置調整步驟1003、圓形研削步驟1004、精研削步驟1005、及清洗容納步驟1006。As shown in FIG. 4, the wafer processing method of the first embodiment includes a
(加工準備步驟) 圖5是表示在圖4所示的晶圓之加工方法的加工準備步驟中使晶圓的正面與保護構件相向的狀態之立體圖。圖6是表示在圖4所示的晶圓之加工方法的加工準備步驟中在晶圓正面黏貼保護構件的狀態之立體圖。(Processing preparation steps) 5 is a perspective view showing a state where the front surface of the wafer and the protective member are opposed to each other in the processing preparation step of the wafer processing method shown in FIG. 4. 6 is a perspective view showing a state in which a protective member is pasted on the front surface of the wafer in the processing preparation step of the wafer processing method shown in FIG. 4.
加工準備步驟1001是以下步驟:在研削裝置1的卡盤台7保持晶圓200,並在主軸33的下端固定研削輪32、42。在實施方式1中,在加工準備步驟1001中,如圖5所示,使保護構件213與晶圓200的正面205相向後,如圖6所示,在晶圓200的正面205黏貼保護構件213。在實施方式1中,保護構件213被形成為與晶圓200相同大小的圓板狀,且係藉由具有可撓性的合成樹脂或具有剛性的基板所構成。The
在實施方式1中,在加工準備步驟1001中,操作員將研削輪32、42固定在研削裝置1的各研削單元3、4的主軸33的下端,並將在正面205黏貼有保護構件213的晶圓200以保護構件213朝下的方式容納於卡匣8。在加工準備步驟1001中,藉由操作員,將加工條件登錄於控制單元100,並在裝置本體2設置已容納黏貼有研削前的保護構件213之晶圓200的卡匣8及未容納晶圓200的卡匣9。在加工準備步驟1001中,研削裝置1的控制單元100若從操作者接收加工動作開始指示,則開始加工動作。In the first embodiment, in the
在加工動作中,研削裝置1的控制單元100使各研削單元3、4的主軸33繞著旋轉軸38旋轉,在搬出搬入單元13從卡匣8取出1片晶圓200,並往對位單元10搬出。控制單元100在對位單元10進行晶圓200的中心對位,將已與搬送單元11對位之晶圓200的正面205側搬入位於搬入搬出區域301之卡盤台7上。此時,已被搬入卡盤台7的晶圓200被定位在與卡盤台7成為同軸的位置。During the processing operation, the
在加工準備步驟1001中,研削裝置1的控制單元100是透過保護構件213而將晶圓200的正面205側吸引保持於搬入搬出區域301的卡盤台7,並進入限定研削步驟1002。In the
(限定研削步驟) 圖7是示意地表示圖4所示的晶圓之加工方法的限定研削步驟剛開始後的粗研削輪與晶圓之俯視圖。圖8是以局部剖面示意地表示使圖7所示的粗研削輪與晶圓抵接的狀態之側視圖。圖9是示意地表示圖4所示的晶圓之加工方法的限定研削步驟結束時的粗研削輪與晶圓之剖面圖。圖10是示意地表示圖9所示的粗研削輪與晶圓之俯視圖。(Limited grinding steps) FIG. 7 is a plan view schematically showing the rough grinding wheel and the wafer immediately after the limited grinding step of the wafer processing method shown in FIG. 4 is started. Fig. 8 is a side view schematically showing a state in which the rough grinding wheel shown in Fig. 7 is brought into contact with the wafer in partial cross-section. 9 is a cross-sectional view schematically showing the rough grinding wheel and the wafer at the end of the limited grinding step of the wafer processing method shown in FIG. 4. Fig. 10 is a plan view schematically showing the rough grinding wheel and the wafer shown in Fig. 9.
限定研削步驟1002是以下步驟:以粗研削輪32研削卡盤台7所保持之晶圓200中排除中央部分後對應於元件區域203之晶圓200的背面201,形成環狀凹部214(圖9及圖10所示),且在晶圓200的背面201形成被環狀凹部214包圍的中央凸部215(圖9及圖10所示)。在限定研削步驟中1002中,研削裝置1的控制單元100會旋轉轉台6,將在搬入搬出區域301保持晶圓200的卡盤台7移動至粗研削區域302,使背面201露出並以轉台6將晶圓200搬送到粗研削區域302。The limiting grinding
在限定研削步驟1002中,研削裝置1的控制單元100在滑動移動機構16使粗研削單元3在水平方向移動,如圖7所示,將粗研削單元3的主軸33之旋轉軸38、與轉台6的軸心亦即保持於卡盤台7之晶圓200的中心210,在水平方向空開間隔而配置(亦即,將晶圓200與粗研削輪32定位於成為非同軸之位置)。並且,在限定研削步驟1002中,在俯視中,研削裝置1的控制單元100將保持於卡盤台7之晶圓200的中心210定位在粗研削輪32的研削磨石31的內周側,將卡盤台7繞著軸心旋轉。此外,在實施方式1中,在限定研削步驟1002中,在俯視中,研削裝置1的控制單元100將卡盤台7與粗研削單元3的粗研削輪32在同方向旋轉。In the
在限定研削步驟1002中,研削裝置1的控制單元100使粗研削單元3下降至研削進給單元5,如圖8所示,使粗研削單元3的粗研削輪32的研削磨石31的下表面311抵接晶圓200的背面201,並以加工內容資訊所訂定的研削進給速度使粗研削單元3下降。於是,研削磨石31研削排除背面201的中央部分後對應於元件區域203之晶圓200的背面201,並依序研削對應於元件區域203之晶圓200的背面201的膜202與母材。在限定研削步驟1002中,如圖9所示,若研削裝置1的控制單元100以粗研削單元3從背面201研削至加工內容資訊所訂定的深度216,則進入位置調整步驟1003。In the
此外,在限定研削步驟1002中,晶圓200與粗研削輪32被定位在成為非同軸的位置,因在俯視中,保持於卡盤台7之晶圓200的中心210被定位在粗研削輪32的研削磨石31的內周側,故在限定研削步驟1002後的晶圓200的背面201中,如圖9及圖10所示,對應元件區域203的晶圓200的背面201形成從背面201凹陷的環狀凹部214,且形成被環狀凹部214包圍的中央凸部215。環狀凹部214的平面形狀被形成為圓環狀,中央凸部215的平面形狀被形成為圓形。環狀凹部214與中央凸部215被形成在與晶圓200成為同軸的位置。並且,在本發明中,因晶圓200的母材是由矽所構成,故在限定研削步驟1002中,只要將粗研削輪32進行研削進給直到至少在環狀凹部214的底面露出母材的程度即可,亦即,只要至少去除接觸研削磨石31的下表面311之膜202即可。In addition, in the
(位置調整步驟) 圖11是以局部剖面表示在圖4所示的晶圓之加工方法的位置調整步驟中使粗研削單元上升並將粗研削輪從晶圓分離的狀態之側視圖。圖12是以局部剖面示意地表示使圖11所示的粗研削輪朝向晶圓的外周緣相對地移動的狀態之側視圖。圖13是示意地表示圖12所示的粗研削輪與晶圓之俯視圖。(Position adjustment steps) 11 is a partial cross-sectional side view showing a state in which the rough grinding unit is raised and the rough grinding wheel is separated from the wafer in the position adjustment step of the wafer processing method shown in FIG. 4. FIG. 12 is a side view schematically showing a state in which the rough grinding wheel shown in FIG. 11 is relatively moved toward the outer periphery of the wafer, with a partial cross-section. Fig. 13 is a plan view schematically showing the rough grinding wheel and the wafer shown in Fig. 12.
位置調整步驟1003是以下步驟:在實施限定研削步驟1002後,將粗研削輪32從晶圓200分離後,使粗研削輪32朝向晶圓200的外周緣相對地移動。在位置調整步驟1003中,如圖11所示,研削裝置1的控制單元100使粗研削單元3上升至研削進給單元5,將粗研削輪32的研削磨石31從保持於卡盤台7之晶圓200分離。The
在位置調整步驟1003中,研削裝置1的控制單元100在滑動移動機構16將粗研削單元3的粗研削輪32朝向粗研削區域302中保持於卡盤台7之晶圓200的外周緣移動。在實施方式1中,在位置調整步驟1003中,如圖12及圖13所示,研削裝置1的控制單元100將粗研削輪32的一部分的研削磨石31的外緣定位在晶圓200之元件區域203與外周剩餘區域204的邊界上,將另一部分的研削磨石31的下表面311定位在晶圓200的中心210上,並進入圓形研削步驟1004。In the
(圓形研削步驟) 圖14是以局部剖面示意地表示使圖4所示的晶圓之加工方法的圓形研削步驟剛開始後的粗研削輪與晶圓抵接的狀態之側視圖。圖15是以局部剖面示意地表示圖4所示的晶圓之加工方法的圓形研削步驟結束時的粗研削輪與晶圓之側視圖。圖16是示意地表示圖15所示的粗研削輪與晶圓之俯視圖。(Circular grinding step) 14 is a partial cross-sectional side view schematically showing a state in which the rough grinding wheel and the wafer just after the circular grinding step of the wafer processing method shown in FIG. 4 are brought into contact with the wafer. 15 is a partial cross-sectional view schematically showing a side view of the rough grinding wheel and the wafer at the end of the circular grinding step of the wafer processing method shown in FIG. 4. Fig. 16 is a plan view schematically showing the rough grinding wheel and the wafer shown in Fig. 15.
圓形研削步驟1004是以下步驟:在實施位置調整步驟1003後,使用粗研削輪32,研削包含中央凸部215之對應於元件區域203之晶圓200的背面201,去除元件區域203所對應之晶圓200的背面201的中央凸部215且形成圓形凹部211,在對應於外周剩餘區域204之晶圓200的背面201形成環狀凸部212。The
在圓形研削步驟1004中,研削裝置1的控制單元100使粗研削單元3下降至研削進給單元5,如圖14所示,使粗研削單元3的粗研削輪32的研削磨石31的下表面311抵接晶圓200的背面201的環狀凹部214的外周側區域與中央凸部215區域,並以加工內容資訊所訂定的研削進給速度使粗研削單元3下降。於是,研削磨石31將對應於元件區域203之晶圓200的背面201的環狀凹部214的外周側區域與中央凸部215區域進行研削並去除。In the
在圓形研削步驟1004中,研削開始時,研削磨石31抵接中央凸部215的角及環狀凹部214的角,將研削磨石31進行修整。在圓形研削步驟1004中,如圖15所示,若研削裝置1的控制單元100以粗研削單元3從背面201研削至比限定研削步驟1002的深度216更深之加工內容資訊所訂定的深度217,則進入精研削步驟1005。In the
此外,在位置調整步驟1003中,因粗研削輪32的一部分的研削磨石31的外緣被定位在晶圓200之元件區域203與外周剩餘區域204的邊界上,且另一部分的研削磨石31的下表面311被定位在晶圓200的中心210上,故在圓形研削步驟1004後的晶圓200的背面201中,如圖15及圖16所示,對應元件區域203的晶圓200的背面201整體形成圓形凹部211,並在對應於外周剩餘區域204之晶圓200的背面201形成因背面201未被研削而殘留的環狀凸部212。如此,在實施方式1的晶圓之加工方法中,相較於在限定研削步驟1002形成的環狀凹部214,在圓形研削步驟1004形成的圓形凹部211被形成地更深。並且,在實施方式1中,在限定研削步驟1002、位置調整步驟1003及圓形研削步驟1004的期間,定位於粗研削區域302之卡盤台7在同方向旋轉。In addition, in the
(精研削步驟)
精研削步驟1005是以下步驟:在實施圓形研削步驟1004後,以精研削輪42更深地研削圓形凹部211。在精研削步驟中1005中,研削裝置1的控制單元100會旋轉轉台6,將保持有在粗研削區域302已實施圓形研削步驟1004的晶圓200之卡盤台7移動至精研削區域303,使背面201露出並以轉台6將晶圓200搬送到精研削區域303。(Leaning steps)
The
在實施方式1中,在精研削步驟1005中,研削裝置1的控制單元100在滑動移動機構16使精研削單元4在水平方向移動,將精研削輪42的一部分的研削磨石41的外緣定位在晶圓200之元件區域203與外周剩餘區域204的邊界上,將另一部分的研削磨石41的下表面411定位在晶圓200的中心210上,一邊使定位於精研削區域303之卡盤台7在與研削輪42相同的方向旋轉,一邊使精研削單元4下降至研削進給單元5。In the first embodiment, in the
在精研削步驟1005中,研削裝置1的控制單元100以精研削單元4將圓形凹部211的底面研削至加工內容資訊所訂定的深度,之後,使研削單元4上升至研削進給單元5,並進入清洗容納步驟1006。In the
(清洗容納步驟)
清洗容納步驟1006是以下步驟:在實施精研削步驟1005後,將晶圓200進行清洗並容納至卡匣9。在清洗容納步驟中1006中,研削裝置1的控制單元100會旋轉轉台6,將保持有在精研削區域303已實施精研削步驟1005的晶圓200之卡盤台7移動至搬入搬出區域301,使背面201露出並以轉台6將晶圓200搬送到搬入搬出區域301。如此,晶圓之加工方法是將晶圓200依序搬送至粗研削區域302、精研削區域303、搬入搬出區域301,並依序實施限定研削步驟1002、位置調整步驟1003、圓形研削步驟1004及精研削步驟1005。此外,每當轉台6旋轉120度時,研削裝置1的控制單元100會將研削前的晶圓200搬入至搬入搬出區域301的卡盤台7。(Cleaning and containing steps)
The cleaning and
在清洗容納步驟1006中,研削裝置1的控制單元100藉由搬送單元11將研削後的晶圓200搬入清洗單元12,以清洗單元12進行清洗,以搬出搬入單元13的搬送手部從晶圓200的保護構件213側保持清洗後的晶圓200,並往卡匣9搬入。此外,在實施方式1中,每當轉台6旋轉120度時,研削裝置1的控制單元100會對定位於粗研削區域302之晶圓200依序實施限定研削步驟1002、位置調整步驟1003及圓形研削步驟1004,對定位於精研削區域303之晶圓200實施精研削步驟1005,將研削後的晶圓200從定位於搬入搬出區域301之卡盤台7搬送至清洗單元12,並將研削前的晶圓200搬送至卡盤台7。若研削裝置1的控制單元100對卡匣8內的全部晶圓200實施研削,則結束加工動作亦即晶圓之加工方法。In the cleaning and
如上所述,在實施方式1的晶圓之加工方法中,即使是難以研削之難研削性的晶圓200,亦在研削步驟1002中,將進行研削的面積限定成比以往的TAIKO研削更狹窄並進行在中央殘留中央凸部215的研削後,在圓形研削步驟1004中研削包含中央凸部215之對應於元件區域203整體之晶圓200的背面201。因此,可使晶圓之加工方法的限定研削步驟1002及圓形研削步驟1004各自的研削範圍比以往的TAIKO研削更狹窄,可減少對研削磨石31施加的負擔。其結果,晶圓之加工方法發揮以下效果:可抑制主軸馬達37的負荷電流值超出規定值,能穩定地實施在晶圓200的背面201形成對應於元件區域203之圓形凹部211與對應於外周剩餘區域204之環狀凸部212的所謂TAIKO研削。As described above, in the wafer processing method of the first embodiment, even if it is a difficult-to-
並且,晶圓之加工方法在圓形研削步驟1004中,在研削中央凸部215時,因研削磨石31碰撞中央凸部215的角及環狀凹部214的角,故亦能獲得修整效果,而亦發揮良好地保持研削狀態的效果。In addition, the wafer processing method in the
[變形例] 基於圖式說明本發明的實施方式1的變形例的晶圓之加工方法。圖17是示意地表示在實施方式1的變形例的晶圓之加工方法的限定研削步驟中最初形成環狀凹部及中央凸部的狀態之剖面圖。此外,圖17中對與實施方式1相同的部分標示相同的符號並省略說明。[Modifications] A method of processing a wafer according to a modification of the first embodiment of the present invention will be described based on the drawings. FIG. 17 is a cross-sectional view schematically showing a state in which the ring-shaped concave portion and the central convex portion are first formed in the limited grinding step of the wafer processing method of the modification of the first embodiment. In addition, in FIG. 17, the same parts as those in the first embodiment are designated by the same reference numerals, and the description thereof is omitted.
實施方式1的變形例的晶圓之加工方法,是一邊將粗研削輪32相對於晶圓200的相對位置從靠近中心210的位置緩緩變更到外周緣的位置,一邊實施多次的限定研削步驟1002,而在背面201形成環狀凹部214與中央凸部215。此外,圖17係表示在限定研削步驟1002中,將粗研削輪32與晶圓200定位在成為同軸的位置而最初形成環狀凹部214與中央凸部215的例子。此外,在本發明中,在最初形成環狀凹部214與中央凸部215時,並非如圖17所示般限定於將粗研削輪32與晶圓200定位在成為同軸的位置,只要一邊將粗研削輪32相對於晶圓200的相對位置從靠近中心210的位置緩緩變更到外周緣的位置,一邊實施多次的限定研削步驟1002即可。The wafer processing method of the modification of the first embodiment is to gradually change the relative position of the
圖17所示的變形例的晶圓之加工方法因是一邊將粗研削輪32相對於晶圓200的相對位置從靠近中心210的位置緩緩變更到外周緣的位置,一邊實施多次的限定研削步驟1002,故相較於實施方式,可更為減少對研削磨石31施加的負擔。The wafer processing method of the modified example shown in FIG. 17 is because the relative position of the
此外,本發明不限定於上述實施方式。亦即,在不脫離本發明的骨幹的範圍可進行各種變形並實施。在上述的實施方式1中,難研削性的晶圓200的母材係由矽所構成,且晶圓200在外表面形成有膜202,但本發明並不限定於此。例如,在本發明中,難研削性的晶圓200的母材亦可由藍寶石或玻璃等所構成,晶圓200亦可為所謂高度摻雜品的晶圓,其藉由混入摻雜材(例如,硼:B、磷:P、錫:Sn或砷:As)而將電阻率調整成例如0.001Ωcm以上且0.1Ωcm以下。在此等難研削性的晶圓200形成圓形凹部211與環狀凸部212時,本發明的晶圓之加工方法只要使用粗研削單元3與精研削單元4中至少一者並實施限定研削步驟1002、位置調整步驟1003及圓形研削步驟1004即可。In addition, the present invention is not limited to the above-mentioned embodiment. That is, various modifications and implementations can be made without departing from the backbone of the present invention. In the first embodiment described above, the base material of the difficult-to-
7:卡盤台 32:粗研削輪(研削輪) 33:主軸 35:外徑(直徑) 38:旋轉軸 41:精研削用的研削磨石(研削磨石) 42:精研削輪(研削輪) 71:保持面 200:晶圓 201:背面 203:元件區域 204:外周剩餘區域 205:正面 206:分割預定線 207:元件 208:半徑 211:圓形凹部 212:環狀凸部 214:環狀凹部 215:中央凸部 1001:加工準備步驟 1002:限定研削步驟 1003:位置調整步驟 1004:圓形研削步驟 1005:精研削步驟7: Chuck table 32: Rough grinding wheel (grinding wheel) 33: Spindle 35: Outer diameter (diameter) 38: Rotation axis 41: Grinding stone for fine grinding (grinding stone) 42: Precision grinding wheel (grinding wheel) 71: keep face 200: Wafer 201: Back 203: component area 204: Peripheral Remaining Area 205: front 206: Dividing planned line 207: Components 208: Radius 211: round recess 212: Ring convex 214: Ring recess 215: Central convex 1001: Processing preparation steps 1002: Limited grinding steps 1003: Position adjustment steps 1004: Circular grinding step 1005: Fine grinding steps
圖1是實施方式1的晶圓之加工方法的加工對象的晶圓之立體圖。
圖2是表示實施方式1的晶圓之加工方法所使用的研削裝置的構成例之立體圖。
圖3是由下方表示圖2所示的研削裝置的粗研削單元及精研削單元之立體圖。
圖4是表示實施方式1的晶圓之加工方法的流程之流程圖。
圖5是表示在圖4所示的晶圓之加工方法的加工準備步驟中使晶圓正面與保護構件相向的狀態之立體圖。
圖6是表示在圖4所示的晶圓之加工方法的加工準備步驟中在晶圓正面黏貼保護構件的狀態之立體圖。
圖7是示意地表示圖4所示的晶圓之加工方法的限定研削步驟剛開始後的粗研削輪與晶圓之俯視圖。
圖8是以局部剖面示意地表示使圖7所示的粗研削輪與晶圓抵接的狀態之側視圖。
圖9是示意地表示圖4所示的晶圓之加工方法的限定研削步驟結束時的粗研削輪與晶圓之剖面圖。
圖10是示意地表示圖9所示的粗研削輪與晶圓之俯視圖。
圖11是以局部剖面表示在圖4所示的晶圓之加工方法的位置調整步驟中使粗研削單元上升並將粗研削輪從晶圓分離的狀態之側視圖。
圖12是以局部剖面示意地表示使圖11所示的粗研削輪朝向晶圓的外周緣相對地移動的狀態之側視圖。
圖13是示意地表示圖12所示的粗研削輪與晶圓之俯視圖。
圖14是以局部剖面示意地表示使圖4所示的晶圓之加工方法的圓形研削步驟剛開始後的粗研削輪與晶圓抵接的狀態之側視圖。
圖15是以局部剖面示意地表示圖4所示的晶圓之加工方法的圓形研削步驟結束時的粗研削輪與晶圓之側視圖。
圖16是示意地表示圖15所示的粗研削輪與晶圓之俯視圖。
圖17是示意地表示在實施方式1的變形例的晶圓之加工方法的限定研削步驟中最初形成環狀凹部及中央凸部的狀態之剖面圖。FIG. 1 is a perspective view of a wafer to be processed in the wafer processing method of
1001:加工準備步驟 1001: Processing preparation steps
1002:限定研削步驟 1002: Limited grinding steps
1003:位置調整步驟 1003: Position adjustment steps
1004:圓形研削步驟 1004: Circular grinding step
1005:精研削步驟 1005: Fine grinding steps
1006:清洗容納步驟 1006: Washing and containing steps
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