TW202127518A - Apparatus and method for depositing multiple layers - Google Patents
Apparatus and method for depositing multiple layers Download PDFInfo
- Publication number
- TW202127518A TW202127518A TW109142166A TW109142166A TW202127518A TW 202127518 A TW202127518 A TW 202127518A TW 109142166 A TW109142166 A TW 109142166A TW 109142166 A TW109142166 A TW 109142166A TW 202127518 A TW202127518 A TW 202127518A
- Authority
- TW
- Taiwan
- Prior art keywords
- layers
- reaction chamber
- substrate
- reaction
- transmission module
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
本發明是關於一種半導體處理裝置及方法，尤其是關於在一基板上形成多層沉積薄膜的沉積裝置及方法。The present invention relates to a semiconductor processing device and method, in particular to a deposition device and method for forming a multilayer deposition film on a substrate.
在3D-NAND或其他領域中，如需要在基板材料上沉積多層堆疊薄膜的垂直堆疊結構，先進制程已可達獲得兩百層已上的堆疊。在已知的技術中，一般使用原位的方法來進行沉積鍍膜。意即，在同一個腔體完成整個堆疊層的沉積。然而，隨著堆疊層數越來越多，反應物質在反應腔體的內表面的附著能力降低，此會引起在腔體中不希望沉積的物質在沉積薄膜上形成顆粒，導致污染。In 3D-NAND or other fields, if it is necessary to deposit a vertical stack structure of multiple stacked thin films on a substrate material, the advanced manufacturing process can achieve a stack of two hundred layers. In the known technology, an in-situ method is generally used for deposition and coating. This means that the entire stacked layer is deposited in the same cavity. However, as the number of stacked layers increases, the ability of reacting substances to adhere to the inner surface of the reaction chamber decreases, which may cause undesired substances deposited in the chamber to form particles on the deposited film, resulting in pollution.
因此，有必要發展針對多層沉積薄膜（尤其是沉積層具有相當的數量）發展一種防止腔內污染的解決手段，確保多層沉積薄膜堆疊的品質。Therefore, it is necessary to develop a solution for preventing contamination in the cavity for the multilayer deposited film (especially the deposition layer has a considerable number) to ensure the quality of the multilayer deposited film stack.
本發明的目的在於提供一種沉積裝置，包含：一反應總成，配置成執行形成一第一數量的層於一基板上、形成一第二數量的層於該基板上及執行一清潔程式；及一傳輸模組，與該反應總成連接且配置成選擇性與該反應總成流體連通，並將形成有該第一數量的層的基板移除至該反應總成之外，經過一預定時間將形成有該第一數量的層的基板回傳至該反應總成中，以繼續形成該第二數量的層於該基板的第一數量的層上。The object of the present invention is to provide a deposition apparatus including: a reaction assembly configured to perform forming a first number of layers on a substrate, forming a second number of layers on the substrate, and performing a cleaning process; and A transmission module connected to the reaction assembly and configured to selectively fluidly communicate with the reaction assembly, and remove the substrate formed with the first number of layers to the outside of the reaction assembly, after a predetermined time The substrate formed with the first number of layers is returned to the reaction assembly to continue to form the second number of layers on the first number of layers of the substrate.
在一具體實施例中，該反應總成包含一第一反應腔體，該第一反應腔體配置成執行形成該第一數量的層於該基板上、形成該第二數量的層於該基板上及執行所述清潔程式。In a specific embodiment, the reaction assembly includes a first reaction chamber configured to perform forming the first number of layers on the substrate and forming the second number of layers on the substrate And execute the cleaning program.
在一具體實施例中，該反應總成包含一第一反應腔體及一第二反應腔體，該第一反應腔體的操作系獨立於該第二反應腔體的操作，該第一反應腔體配置成執行形成該第一數量的層於該基板上及執行所述清潔程式，該第二反應腔體配置成形成該第二數量的層於該基板上。In a specific embodiment, the reaction assembly includes a first reaction chamber and a second reaction chamber. The operation of the first reaction chamber is independent of the operation of the second reaction chamber. The first reaction chamber The cavity is configured to form the first number of layers on the substrate and perform the cleaning program, and the second reaction chamber is configured to form the second number of layers on the substrate.
在一具體實施例中，該傳輸模組配置成與該第一反應腔體連接且配置成選擇性與該第一反應腔體流體連通，並將形成有該第一數量的層的基板移除至該第一反應腔體之外，經過該預定時間將形成有該第一數量的層的基板回傳至該第一反應腔體中，以繼續形成該第二數量的層於該基板的第一數量的層上，其中該預定時間大於或等於執行所述清潔程式所需的一時間。In a specific embodiment, the transmission module is configured to be connected to the first reaction chamber and configured to selectively fluidly communicate with the first reaction chamber, and remove the substrate formed with the first number of layers Outside the first reaction chamber, after the predetermined time, the substrate formed with the first number of layers is returned to the first reaction chamber to continue to form the second number of layers on the second substrate of the substrate. On a number of layers, the predetermined time is greater than or equal to a time required to execute the cleaning program.
在一具體實施例中，該傳輸模組配置成與該第一反應腔體及該第二反應腔體連接且配置成選擇性與該第一反應腔體及該第二反應腔體流體連通，並將形成有該第一數量的層的基板移除至該第一反應腔體之外，經過該預定時間將形成有該第一數量的層的基板傳輸至該第二反應腔體中，以繼續形成該第二數量的層於該基板的第一數量的層上。In a specific embodiment, the transmission module is configured to be connected to the first reaction cavity and the second reaction cavity and configured to selectively fluidly communicate with the first reaction cavity and the second reaction cavity, And remove the substrate formed with the first number of layers out of the first reaction chamber, and transfer the substrate formed with the first number of layers to the second reaction chamber after the predetermined time Continue to form the second number of layers on the first number of layers of the substrate.
在一具體實施例中，在完成形成該第一數量的層於該基板上之後，該第一反應腔體執行所述清潔程式以去除在形成該第一數量的層的期間的腔體內殘存物以接續處理下一基板。In a specific embodiment, after forming the first number of layers on the substrate, the first reaction chamber performs the cleaning process to remove residues in the cavity during the formation of the first number of layers Process the next substrate in succession.
本發明的另一目的在於提供一種沉積方法，由一沉積裝置執行，其中該沉積裝置包含一反應總成及與該反應總成可流體連通的一傳輸模組，該方法包含：由該反應總成，形成一第一數量的層於一基板上；由該傳輸模組，將形成有該第一數量的層的基板移除至該反應總成之外；由該反應總成的至少一部分，執行一清潔程式；由該傳輸模組，經過一預定時間將形成有該第一數量的層的基板回傳至該反應總成中；及由該反應總成，形成一第二數量的層於該基板的第一數量的層上。Another object of the present invention is to provide a deposition method performed by a deposition device, wherein the deposition device includes a reaction assembly and a transmission module fluidly communicated with the reaction assembly, and the method includes: To form a first number of layers on a substrate; from the transmission module, remove the substrate formed with the first number of layers to the outside of the reaction assembly; from at least a part of the reaction assembly, Perform a cleaning process; from the transmission module, after a predetermined time, the substrate formed with the first number of layers is returned to the reaction assembly; and from the reaction assembly, a second number of layers are formed on the The first number of layers of the substrate.
在一具體實施例中，其中該反應總成包含一第一反應腔體，該方法包含：由該第一反應腔體，形成該第一數量的層於該基板上；由該第一反應腔體，執行所述清潔程式；及由該第一反應腔體，形成該第二數量的層於該基板上。In a specific embodiment, the reaction assembly includes a first reaction chamber, and the method includes: forming the first number of layers on the substrate from the first reaction chamber; and from the first reaction chamber Body, executing the cleaning program; and forming the second number of layers on the substrate from the first reaction chamber.
在一具體實施例中，該反應總成包含一第一反應腔體及一第二反應腔體，該第一反應腔體的操作系獨立於該第二反應腔體的操作，該方法包含：由該第一反應腔體，形成該第一數量的層於該基板上；由該第二反應腔體，形成該第二數量的層於該基板的第一數量的層上；及由該第一反應腔體，執行所述清潔程式。In a specific embodiment, the reaction assembly includes a first reaction chamber and a second reaction chamber. The operation of the first reaction chamber is independent of the operation of the second reaction chamber. The method includes: The first reaction chamber forms the first number of layers on the substrate; the second reaction chamber forms the second number of layers on the first number of layers on the substrate; and A reaction chamber to execute the cleaning program.
在一具體實施例中，該傳輸模組與該第一反應腔體連接且選擇性與該第一反應腔體流體連通，該方法包含：由該傳輸模組，將形成有該第一數量的層的基板移除至該第一反應腔體之外；由該傳輸模組，經過該預定時間將形成有該第一數量的層的基板回傳至該第一反應腔體中，其中該預定時間大於或等於執行所述清潔程式所需的一時間；及由該第一反應腔體，形成該第二數量的層於該基板的第一數量的層上。In a specific embodiment, the transmission module is connected to the first reaction chamber and is selectively in fluid communication with the first reaction chamber, and the method includes: forming the transmission module with the first amount of The substrate of the layer is removed outside the first reaction chamber; the transfer module returns the substrate formed with the first number of layers to the first reaction chamber after the predetermined time, wherein the predetermined The time is greater than or equal to a time required to execute the cleaning program; and the first reaction chamber forms the second number of layers on the first number of layers of the substrate.
在一具體實施例中，該傳輸模組與該第一反應腔體及該第二反應腔體連接且選擇性與該第一反應腔體及該第二反應腔體流體連通，該方法包含：由該傳輸模組，將形成有該第一數量的層的基板移除至該第一反應腔體之外；由該傳輸模組，經過該預定時間將形成有該第一數量的層的基板傳輸至該第二反應腔體中；及由該第二反應腔體，形成該第二數量的層於該基板的第一數量的層上。In a specific embodiment, the transmission module is connected to the first reaction chamber and the second reaction chamber and is selectively in fluid communication with the first reaction chamber and the second reaction chamber, and the method includes: The substrate with the first number of layers is removed from the first reaction chamber by the transfer module; the substrate with the first number of layers is formed by the transfer module after the predetermined time Transferred to the second reaction chamber; and from the second reaction chamber, the second number of layers are formed on the first number of layers of the substrate.
在一具體實施例中，由該第一反應腔體，在完成形成該第一數量的層於該基板上之後，執行所述清潔程式以去除在形成該第一數量的層的期間的腔體內殘存物以接續處理下一基板。In a specific embodiment, after the first reaction chamber is used to form the first number of layers on the substrate, the cleaning process is performed to remove the cavity during the formation of the first number of layers The remaining material will continue to process the next substrate.
在以下本發明的說明書以及藉由本發明原理所例示的圖式當中，將更詳細呈現本發明的這些與其他特色和優點。These and other features and advantages of the present invention will be presented in more detail in the following description of the present invention and the drawings exemplified by the principles of the present invention.
底下將參考圖式更完整說明本發明，並且藉由例示顯示特定範例具體實施例。不過，本主張主題可具體實施於許多不同形式，因此所涵蓋或申請主張主題的建構並不受限於本說明書所揭示的任何範例具體實施例；範例具體實施例僅為例示。同樣，本發明在於提供合理寬闊的範疇給所申請或涵蓋之主張主題。除此之外，例如主張主題可具體實施為方法、裝置或系統。因此，具體實施例可採用例如硬體、軟體、韌體或這些的任意組合(已知並非軟體)之形式。Hereinafter, the present invention will be explained more fully with reference to the drawings, and specific examples and specific embodiments will be shown by exemplification. However, the claimed subject matter can be implemented in many different forms. Therefore, the construction of the claimed subject matter covered or applied for is not limited to any exemplary specific embodiments disclosed in this specification; the exemplary specific embodiments are only examples. Likewise, the present invention aims to provide a reasonably broad category for the claimed subject matter that is applied for or covered. In addition, for example, the claimed subject matter can be embodied as a method, device, or system. Therefore, the specific embodiments may take the form of, for example, hardware, software, firmware, or any combination of these (not known as software).
本說明書內使用的詞彙「一實施例」並不必要參照相同具體實施例，且本說明書內使用的「其他（一些/某些）實施例」並不必要參照不同的具體實施例。其目的在於例如主張的主題包括全部或部分範例具體實施例的組合。The term "an embodiment" used in this specification does not necessarily refer to the same specific embodiment, and the "other (some/some) embodiments" used in this specification does not necessarily refer to different specific embodiments. The purpose is, for example, that the claimed subject matter includes all or part of a combination of exemplary embodiments.
第一圖顯示本發明沉積裝置（100）的一方塊示意圖。沉積裝置（100）包含一反應總成（101）及一傳輸模組（102）。反應總成（101）主要配置成執行形成一第一數量的層（如N個層）於一基板上（如一晶圓）、形成一第二數量的層（如M個層）於該基板上及執行一清潔程式。傳輸模組（102）與反應總成（101）連接且配置成選擇性與反應總成（101）流體連通，並將形成有第一數量（N）的層的基板移除至反應總成（101）之外，經過一預定時間將形成有第一數量（N）的層的基板回傳至反應總成（101）中，以繼續形成第二數量（M）的層於該基板的第一數量（N）的層上。The first figure shows a block diagram of the deposition apparatus (100) of the present invention. The deposition device (100) includes a reaction assembly (101) and a transmission module (102). The reaction assembly (101) is mainly configured to form a first number of layers (such as N layers) on a substrate (such as a wafer), and form a second number of layers (such as M layers) on the substrate And execute a cleaning program. The transmission module (102) is connected to the reaction assembly (101) and is configured to selectively fluidly communicate with the reaction assembly (101), and remove the substrate on which the first number (N) of layers are formed to the reaction assembly ( 101), after a predetermined time, the substrate with the first number (N) of layers is returned to the reaction assembly (101) to continue to form the second number (M) of layers on the first The number (N) of the layer.
所述反應總成（101）可包含一或多個反應腔體，例如專用於電漿處理的反應腔體。所述傳輸模組（102）配置成用於傳輸一或多個基板。傳輸模組（102）可提供一或多個機械手指抓持基板。The reaction assembly (101) may include one or more reaction chambers, for example, a reaction chamber dedicated to plasma processing. The transmission module (102) is configured to transmit one or more substrates. The transmission module (102) can provide one or more mechanical fingers to grasp the substrate.
反應總成（101）與傳輸模組（102）之間經由一閥門元件（103）連接。閥門元件（103）具有多個閥門，其使反應總成（101）的至少一部分可選擇性與傳輸模組（102）流體連通。傳輸模組（102）可維持與反應總成（101）接近或相同的真空環境，使基板於傳輸的過程中減少環境氣壓的平衡時間。The reaction assembly (101) and the transmission module (102) are connected via a valve element (103). The valve element (103) has a plurality of valves, which enable at least a part of the reaction assembly (101) to selectively fluidly communicate with the transmission module (102). The transfer module (102) can maintain a vacuum environment close to or the same as that of the reaction assembly (101), so that the substrate can reduce the equilibrium time of the ambient air pressure during the transfer process.
第二圖顯示本發明沉積方法的流程圖，尤其本發明方法適用於具有相當沉積層數需求的半導體製造。該方法使於步驟S200，一待處理基板由傳輸模組（102）傳送至反應總成（101），並由反應總成（101）形成一第一數量的層（如N個層）於所述基板上。待處理基板可以是未包含任何薄膜的基板或者已經形成有特定數量的薄膜。完成第一數量的層的形成後，結束步驟S200。The second figure shows the flow chart of the deposition method of the present invention, especially the method of the present invention is suitable for semiconductor manufacturing with a considerable number of deposition layers. In this method, in step S200, a substrate to be processed is transferred from the transfer module (102) to the reaction assembly (101), and a first number of layers (such as N layers) are formed by the reaction assembly (101). Mentioned on the substrate. The substrate to be processed may be a substrate that does not contain any thin films or a certain number of thin films have been formed. After the formation of the first number of layers is completed, step S200 is ended.
步驟S201，傳輸模組（102）將形成有第一數量的層的基板移除至反應總成（101）之外。由於在第一數量的沉積過程中，已有相當量的反應物質累積在處理總成（101）的腔體中，以至於導致後續的沉積受到污染的可能性也增加。傳輸模組（102）將形成有第一數量的層的基板自反應總成（101）取出並停放於傳輸模組（102）的環境中。傳輸模組（102）應提供有類似或相當於反應總成（101）的環境，使顆粒污染停放基板的機率降低。In step S201, the transmission module (102) removes the substrate on which the first number of layers are formed out of the reaction assembly (101). Since during the first amount of deposition, a considerable amount of reactant has accumulated in the cavity of the processing assembly (101), so that the possibility of subsequent deposition being contaminated also increases. The transmission module (102) takes out the substrate formed with the first number of layers from the reaction assembly (101) and parks it in the environment of the transmission module (102). The transmission module (102) should provide an environment similar or equivalent to the reaction assembly (101) to reduce the probability of particle contamination of the parked substrate.
步驟S202，由反應總成（101）執行一清潔程式，以去除在形成第一數量的層的期間的殘留物（通常附著在腔體內壁），直到反應總成（101）恢復可進行沉積薄膜的較佳條件，結數步驟S202。In step S202, the reaction assembly (101) executes a cleaning procedure to remove residues (usually attached to the inner wall of the cavity) during the formation of the first number of layers, until the reaction assembly (101) is restored and the film can be deposited The better condition is the counting step S202.
在步驟S203，傳輸模組（102）經過一預定時間將形成有第一數量的層的基板回傳至反應總成（101）中。所述預定時間大於或等於反應總成（101）執行所述清潔程式的一時間。傳輸模組（102）可將形成有第一數量的層的基板放回反應總成（101）的原位（即原處理位置），或者傳輸模組（102）可將形成有第一數量的層的基板放置在反應總成（101）中新的或另一個處理位置，結束步驟S203。In step S203, the transmission module (102) returns the substrate formed with the first number of layers to the reaction assembly (101) after a predetermined time. The predetermined time is greater than or equal to a time for the reaction assembly (101) to execute the cleaning program. The transmission module (102) can return the substrate formed with the first number of layers to the original position (ie the original processing position) of the reaction assembly (101), or the transmission module (102) can form the first number of layers. The substrate of the layer is placed in a new or another processing position in the reaction assembly (101), and step S203 is ended.
在步驟S204，反應總成（S204）形成一第二數量的層（如M個層）於該基板的第一數量的層上，以獲得第一數量及第二數量加總的層。In step S204, the reaction assembly (S204) forms a second number of layers (such as M layers) on the first number of layers of the substrate to obtain the first number and the second number of layers added together.
上述流程並非限制一個步驟接著一個。在某些可能中，前後步驟的執行可有部分的重迭。例如，步驟S202可與步驟S203和S204至少部分重迭。所述清潔程式將薄膜的沉積分為第一階段和第二階段。在可能的實施例中，所述方法可包含更多次的清潔程式及沉積階段。The above process is not limited to one step after another. In some possibilities, the execution of the previous steps may be partially overlapped. For example, step S202 may at least partially overlap with steps S203 and S204. The cleaning program divides the deposition of the thin film into a first stage and a second stage. In a possible embodiment, the method may include more cleaning procedures and deposition stages.
所述薄膜沉積可由多種製造方法實現，像是已知的電漿處理。反應總成（101）中的待執行腔體可以適當的流速通入多種反應氣體（視沉積物質而定）。腔體溫度及壓力可維持在特定的範圍。位於腔體上部的上電極和位於基板支撐座（pedestal）的下電極可給予適當的電力以在腔體中使所述反應氣體轉變成電漿氣體。The thin film deposition can be achieved by a variety of manufacturing methods, such as the known plasma treatment. The chamber to be executed in the reaction assembly (101) can be filled with a variety of reaction gases (depending on the deposition material) at an appropriate flow rate. The cavity temperature and pressure can be maintained within a specific range. The upper electrode located on the upper part of the cavity and the lower electrode located on the pedestal can be given appropriate power to convert the reaction gas into plasma gas in the cavity.
所述清潔程式可由多種方法實現，像是電漿清潔及/或氣體清潔。舉例而言，反應總成（101）中的待清潔腔體可以適當的流速通入清潔氣體，如一氧化二氮（N2 O）。腔體的溫度及壓力可維持在特定的範圍。位於腔體上部的上電極和位於基板支撐座的下電極可給予適當的電力以在腔體中產生電漿氣體，以清潔腔體內壁殘存物。The cleaning process can be implemented by various methods, such as plasma cleaning and/or gas cleaning. For example, the chamber to be cleaned in the reaction assembly (101) can be fed with a cleaning gas, such as nitrous oxide (N 2 O), at an appropriate flow rate. The temperature and pressure of the cavity can be maintained within a specific range. The upper electrode located on the upper part of the cavity and the lower electrode located on the substrate support base can be given appropriate power to generate plasma gas in the cavity to clean the remnants on the inner wall of the cavity.
第三A圖及第三B圖分別顯示本發明沉積裝置的第一實施例和第二實施例。兩者可以具有相同或不同的硬體設定。The third diagram A and the third diagram B respectively show the first embodiment and the second embodiment of the deposition apparatus of the present invention. Both can have the same or different hardware settings.
第三A圖的沉積裝置（300）包含多個傳送盒（301）、一大氣傳輸模組（302）、一負載鎖腔體（303）、一低壓傳輸模組（304）及具有一第一反應腔體（305）的反應總成。此處低壓傳輸模組（304）與第一圖所述傳輸模組（102）具有相同或類似的配置。此處反應總成與第一圖所述反應總成具有相同或類似的配置。The deposition device (300) of Figure 3A includes multiple transport boxes (301), an atmospheric transmission module (302), a load lock chamber (303), a low-voltage transmission module (304), and a first The reaction assembly of the reaction chamber (305). Here, the low-voltage transmission module (304) has the same or similar configuration as the transmission module (102) described in the first figure. The reaction assembly here has the same or similar configuration as the reaction assembly described in the first figure.
傳送盒（301）容置有複數個基板或晶圓並與大氣傳輸模組（302）的一側流體連接。大氣傳輸模組（302）的另一側與負載鎖腔體（303）流體連接且提供有一或多個機械手指將基板自傳送盒（301）轉移至負載鎖腔體（303）內。負載鎖腔體（303）與一真空系統連接，使負載鎖腔體（303）在大氣環境和真空環境之間轉換。低壓傳輸模組（304）與負載鎖腔體（303）及第一反應腔體（305）流體連接。低壓傳輸模組（304）以一或多個機械手指（306）將基板自負載鎖腔體（303）轉移至第一反應腔體（305），或將基板自第一反應腔體（305）移除。The transfer box (301) contains a plurality of substrates or wafers and is fluidly connected to one side of the atmospheric transmission module (302). The other side of the atmospheric transmission module (302) is fluidly connected to the load lock cavity (303), and one or more mechanical fingers are provided to transfer the substrate from the transfer box (301) to the load lock cavity (303). The load lock cavity (303) is connected with a vacuum system, so that the load lock cavity (303) is switched between an atmospheric environment and a vacuum environment. The low-pressure transmission module (304) is in fluid connection with the load lock cavity (303) and the first reaction cavity (305). The low-voltage transmission module (304) uses one or more robotic fingers (306) to transfer the substrate from the load lock chamber (303) to the first reaction chamber (305), or transfer the substrate from the first reaction chamber (305) Remove.
在一實施例中，低壓傳輸模組可包含一儲存腔體（未顯示），其不同於反應腔體，主要用於暫時存放即將進入或離開反應腔的基板。所述儲存腔體與低壓傳輸模組維持著相同的壓力。或者，所述儲存腔體可與一額外的真空系統連接，使儲存腔體可維持在比低壓傳輸模組相對低的壓力環境。In one embodiment, the low-pressure transmission module may include a storage chamber (not shown), which is different from the reaction chamber and is mainly used to temporarily store the substrate that is about to enter or leave the reaction chamber. The storage cavity and the low-pressure transmission module maintain the same pressure. Alternatively, the storage cavity can be connected to an additional vacuum system, so that the storage cavity can be maintained in a relatively lower pressure environment than the low pressure transmission module.
第一反應腔體（305）可為一電漿反應腔體，其一般包含一腔體、一氣體供應元件、一基板支撐座、一氣體源、一RF源及一排氣通道等。氣體源可供應各種氣體，如惰性氣體、反應氣體及其他處理氣體。RF源連接氣體供應元件的一上電極和支撐座的一下電極，並可配置成提供高頻或低頻的RF訊號。電漿形成於上下電極之間。依據沉積物質的差異，電漿的狀態也應對應調整。例如，一第一薄膜的形成使用一第一電漿氣體，一第二薄膜的形成使用一第二電漿氣體。較佳地，不同電漿狀態之間可相互切換，且切換的過程不執行任何薄膜的形成。The first reaction chamber (305) may be a plasma reaction chamber, which generally includes a chamber, a gas supply element, a substrate support seat, a gas source, an RF source, and an exhaust channel. The gas source can supply various gases, such as inert gases, reactive gases and other processing gases. The RF source is connected to an upper electrode of the gas supply element and a lower electrode of the support base, and can be configured to provide high-frequency or low-frequency RF signals. Plasma is formed between the upper and lower electrodes. According to the difference of the deposited material, the state of the plasma should be adjusted accordingly. For example, a first plasma gas is used for the formation of a first thin film, and a second plasma gas is used for the formation of a second thin film. Preferably, different plasma states can be switched mutually, and the switching process does not perform any thin film formation.
第一反應腔體（305）配置成執行形成一第一數量的層（如N個層）於基板上、形成一第二數量的層（如M個層）於基板上及執行一清潔程式。第一數量的形成和第二數量的形成並非連續的步驟，兩者之間以至少一預定時間隔開，尤其所述預定時間大於或等於執行清潔程式的時間。The first reaction chamber (305) is configured to form a first number of layers (such as N layers) on the substrate, form a second number of layers (such as M layers) on the substrate, and perform a cleaning process. The formation of the first number and the formation of the second number are not consecutive steps, and are separated by at least a predetermined time between them, especially the predetermined time is greater than or equal to the time for executing the cleaning program.
低壓傳輸模組（304）配置成與第一反應腔體（305）連接且配置成經由閥門選擇性與第一反應腔體（305）流體連通，並配置成將在第一反應腔體（305）中形成有第一數量（N）的層的基板移除至第一反應腔體（305）之外。低壓傳輸模組（304）還配置成經過所述預定時間而將形成有第一數量（N）的層的基板回傳至第一反應腔體（305）中，以繼續形成第二數量（M）的層於基板的第一數量（N）的層上。藉此，第一反應腔體（305）便有空檔執行所述清潔程式，將在第一數量的層的形成期間所殘留的物質去除，恢復形成薄膜的較佳條件。The low-pressure transmission module (304) is configured to be connected to the first reaction chamber (305) and configured to selectively fluidly communicate with the first reaction chamber (305) via a valve, and is configured to be connected to the first reaction chamber (305) The substrate in which the first number (N) of layers are formed in) is removed to the outside of the first reaction chamber (305). The low-voltage transmission module (304) is also configured to pass the predetermined time back to the first number (N) of the substrate formed with the layer to the first reaction chamber (305), so as to continue to form the second number (M). ) Is on the first number (N) of layers of the substrate. In this way, the first reaction chamber (305) has a free time to perform the cleaning process, which removes the remaining substances during the formation of the first number of layers and restores the optimal conditions for forming the thin film.
所述預定時間大於或等於執行所述清潔程式所需的一時間。所述第一數量與第二數量的總和為基板的目標沉積層數。低壓傳輸模組（304）可維持與第一反應腔體（305）接近或相當的壓力，使兩者之間的閥門啟閉較為容易。The predetermined time is greater than or equal to a time required to execute the cleaning program. The sum of the first number and the second number is the target deposition layer number of the substrate. The low pressure transmission module (304) can maintain a pressure close to or equivalent to that of the first reaction chamber (305), making it easier to open and close the valve between the two.
所述第一數量和第二數量並非為一定的順序。可替代地，低壓傳輸模組（304）配置成經過所述預定時間而將形成有第二數量（M）的層的基板回傳至第一反應腔體（305）中，以繼續形成第一數量（N）的層於基板的第二數量（M）的層上。The first number and the second number are not in a certain order. Alternatively, the low-voltage transmission module (304) is configured to return the substrate formed with the second number (M) of layers to the first reaction chamber (305) after the predetermined time to continue to form the first reaction chamber (305). The number (N) of layers is on the second number (M) of layers of the substrate.
所述第一數量的層和第二數量的層的形成可以利用相同或不同的製造方法實現。在一例子中，第一數量的或第二數量的層，其中的相鄰兩層分別為不同物質的沉積薄膜。例如，氮化物層（nitride film）與氧化層（oxide film）的堆疊。在其他例子中，第一數量的層和第二數量的層分別有相同或不同的物質組成或排列順序。如前所述，兩種不同物質的層可在相同的第一反應腔體（305）中由不同的電漿狀態分別形成。意即，第一反應腔體（305）可配置成具有切換電漿狀態的能力，相異電漿之間的轉換使第一反應腔體（305）可提供至少兩種薄膜的形成。在某些實施例中，所述電漿轉換的過程中可包含產生用於清潔腔體的電漿，使在沉積其他薄膜之前殘存於腔體內的物質可被去除。The formation of the first number of layers and the second number of layers can be achieved using the same or different manufacturing methods. In one example, the first number or the second number of layers, two adjacent layers of which are deposited films of different substances. For example, a stack of nitride film and oxide film. In other examples, the first number of layers and the second number of layers have the same or different material composition or arrangement order, respectively. As mentioned above, two layers of different substances can be formed by different plasma states in the same first reaction chamber (305). That is, the first reaction chamber (305) can be configured to have the ability to switch plasma states, and the conversion between different plasmas allows the first reaction chamber (305) to provide at least two kinds of thin film formation. In some embodiments, the plasma conversion process may include generating plasma for cleaning the cavity, so that substances remaining in the cavity before depositing other films can be removed.
第三B圖的沉積裝置（300）如第三A圖具有相同或類似的配置。差異在於第三B圖的沉積裝置（300）多了反應總成的一第二反應腔體（307）的使用。第一反應腔體（305）的操作獨立於第二反應腔體（307）的操作。第一和第二反應腔體（305、307）可具有類似或相同的配置。The deposition apparatus (300) of the third figure B has the same or similar configuration as that of the third figure A. The difference is that the deposition device (300) of the third figure B uses an additional second reaction chamber (307) of the reaction assembly. The operation of the first reaction chamber (305) is independent of the operation of the second reaction chamber (307). The first and second reaction chambers (305, 307) may have similar or identical configurations.
第一反應腔體（305）配置成執行形成一第一數量的層（如N個層）於基板上及執行一清潔程式，第二反應腔體（307）配置成形成一第二數量的層（M個層）於基板上。當第一數量的層與第二數量的層為相同的薄膜型態，則第一反應腔體（305）與第二反應腔體（307）使用相同的配置以及控制。所述第一數量的層的形成與第二數量的層的形成可至少部分同步執行，意即第一反應腔體（305）和第二反應腔體（307）可在某些時間區間同時執行所述沉積。當然，第一數量的層的形成和第二數量的層的形成亦可為不重迭，且具有特定先後順序。這些變化，必須視目標沉積數量及製造手段等因素所決定。The first reaction chamber (305) is configured to form a first number of layers (such as N layers) on the substrate and perform a cleaning program, and the second reaction chamber (307) is configured to form a second number of layers (M layers) on the substrate. When the first number of layers and the second number of layers are of the same film type, the first reaction chamber (305) and the second reaction chamber (307) use the same configuration and control. The formation of the first number of layers and the formation of the second number of layers can be performed at least partially simultaneously, meaning that the first reaction chamber (305) and the second reaction chamber (307) can be performed simultaneously in certain time intervals The deposition. Of course, the formation of the first number of layers and the formation of the second number of layers can also be non-overlapping and have a specific sequence. These changes must be determined by factors such as the target deposition quantity and manufacturing methods.
低壓傳輸模組（304）配置成與第一反應腔體（305）及第二反應腔體（307）連接且配置成經由閥門選擇性與第一反應腔體（305）及第二反應腔體（307）流體連通，並配置成將在第一反應腔體（305）中形成有第一數量的層的基板移除至第一反應腔體（305）之外，以及經過一預定時間將形成有第一數量的層的基板傳輸至第二反應腔體（307）中，以繼續形成第二數量的層於基板的第一數量的層上。The low-pressure transmission module (304) is configured to be connected to the first reaction chamber (305) and the second reaction chamber (307) and is configured to selectively communicate with the first reaction chamber (305) and the second reaction chamber through a valve (307) is in fluid communication and is configured to remove the substrate with the first number of layers formed in the first reaction chamber (305) out of the first reaction chamber (305), and after a predetermined time, the substrate will be formed The substrate with the first number of layers is transferred to the second reaction chamber (307) to continue to form the second number of layers on the first number of layers of the substrate.
應注意，前述第一實施例所提到的預定時間與此處第二實施例所提到的預定時間有不同的意義。此處的預定時間是指形成有第一數量的層的基板在低壓傳輸模組（304）所停留的時間。或者，此處的預定時間是指形成有第一數量的層的基板在低壓傳輸模組（304）中等待被傳送至第二反應腔體（307）所等待的時間。在可能的實施例中，此處的預定時間包含基板在低壓傳輸模組（304）中等待第二反應腔體（307）執行一清潔程式所需的時間。換言之，前述的預定時間是關於第一反應腔體（305）執行清潔程式的關聯時間；此處的預定時間是關於基板從第一反應腔體（305）轉移至第二反應腔體（307）所關聯的時間。所述第一數量與第二數量的總和為基板的目標沉積層數。低壓傳輸模組（304）可維持與第一反應腔體（305）及第二反應腔體（307）接近或相當的壓力，使兩者之間的閥門啟閉較為容易。It should be noted that the predetermined time mentioned in the foregoing first embodiment has a different meaning from the predetermined time mentioned in the second embodiment herein. The predetermined time here refers to the time during which the substrate with the first number of layers stays in the low-voltage transmission module (304). Or, the predetermined time here refers to the waiting time for the substrate formed with the first number of layers in the low-voltage transmission module (304) to be transferred to the second reaction chamber (307). In a possible embodiment, the predetermined time here includes the time required for the substrate to wait for the second reaction chamber (307) to perform a cleaning process in the low-pressure transmission module (304). In other words, the aforementioned predetermined time is related to the time associated with the cleaning process performed by the first reaction chamber (305); the predetermined time here refers to the transfer of the substrate from the first reaction chamber (305) to the second reaction chamber (307) The associated time. The sum of the first number and the second number is the target deposition layer number of the substrate. The low pressure transmission module (304) can maintain a pressure close to or equivalent to the first reaction chamber (305) and the second reaction chamber (307), making it easier to open and close the valve between the two.
第二反應腔體（307）可採用如前述的製造方法繼續形成第二數量的層於基板的第一數量的層上。The second reaction chamber (307) can continue to form the second number of layers on the first number of layers of the substrate by using the aforementioned manufacturing method.
在完成形成第一數量的層於基板上之後且基板被移出第一反應腔體（305）之外，第一反應腔體執行如前述清潔程式以去除在形成第一數量的層的期間的腔體內殘存物以接續處理來自負載鎖腔體的下一基板。在第二實施例中，低壓傳輸模組（304）單向地將基板從負載鎖腔體傳送至第一反應腔體，接著將基板從第一反應腔體（305）傳送至第二反應腔體（307）。然而，本發明不以此為限。在可能的變化中，低壓傳輸模組（304）可將基板反向地從第二反應腔體（307）回傳至第一反應腔體（305），以獲得最終數量大於第一數量和第二數量總和的層。After the formation of the first number of layers on the substrate is completed and the substrate is removed from the first reaction chamber (305), the first reaction chamber performs a cleaning procedure as described above to remove the cavity during the formation of the first number of layers Residues in the body continue to process the next substrate from the load lock cavity. In the second embodiment, the low-voltage transfer module (304) unidirectionally transfers the substrate from the load lock chamber to the first reaction chamber, and then transfers the substrate from the first reaction chamber (305) to the second reaction chamber. Body (307). However, the present invention is not limited to this. In a possible change, the low-pressure transmission module (304) can reversely transfer the substrate from the second reaction chamber (307) to the first reaction chamber (305) to obtain a final quantity greater than the first quantity and the first quantity. Two layers of the sum of the numbers.
第四圖顯示本發明沉積方法流程的一第一實施例。並參第三A圖，該方法始於步驟S400，由第一反應腔體（305）形成一第一數量的層（如N個層）於基板上。例如，第一數量的層可包含如前述的氮化物層和氧化層，其由已知的原位製造方法所獲得。當基板上已形成預定的第一數量的層，第一反應腔體（305）停止形成其他的層，結束步驟S400。The fourth figure shows a first embodiment of the flow of the deposition method of the present invention. Referring to the third figure A, the method starts in step S400, and a first number of layers (such as N layers) are formed on the substrate from the first reaction chamber (305). For example, the first number of layers may include nitride layers and oxide layers as previously described, which are obtained by known in-situ manufacturing methods. When the predetermined first number of layers have been formed on the substrate, the first reaction chamber (305) stops forming other layers, and step S400 is ended.
步驟S401，由低壓傳輸模組（304）將形成有第一數量的層的基板移除至第一反應腔體（305）之外。第一反應腔體（305）首先可調整腔內環境條件直到接近或等於低壓傳輸模組（304）的環境條件。之後，機械手指（306）自第一反應腔體（305）取出形成有第一數量的層的基板，並將基板停放在低壓傳輸模組（304）中，如前述儲存腔體，結束步驟S401。低壓傳輸模組（304）可提供有適當的抗污染措施，使暫時停放的基板受到污染的機率有效減少。In step S401, the low-voltage transmission module (304) removes the substrate formed with the first number of layers out of the first reaction chamber (305). The first reaction chamber (305) can first adjust the environmental conditions in the chamber until it is close to or equal to the environmental conditions of the low-pressure transmission module (304). After that, the robot finger (306) takes out the substrate formed with the first number of layers from the first reaction chamber (305), and parks the substrate in the low-voltage transmission module (304), as in the aforementioned storage chamber, and ends step S401 . The low-voltage transmission module (304) can be provided with appropriate anti-pollution measures to effectively reduce the probability of temporarily parked substrates being contaminated.
步驟S402，由第一反應腔體（305）執行一清潔程式，以去除附著在腔體內壁等的殘留物。可使用已知的去除方法，如前述使用電漿氣體的方式。所述清潔程式持續一時間，直到第一反應腔體（305）恢復可再次形成薄膜的較佳條件，即停止清潔程式，結束步驟S402。In step S402, a cleaning program is executed by the first reaction chamber (305) to remove residues attached to the inner wall of the chamber. A known removal method can be used, such as the aforementioned method of using plasma gas. The cleaning process lasts for a period of time until the first reaction chamber (305) recovers the better conditions for forming a thin film again, that is, the cleaning process is stopped, and step S402 is ended.
步驟S403，由低壓傳輸模組（304）經過一預定時間將形成有第一數量的層的基板回傳至第一反應腔體中。當第一反應腔體和低壓傳輸模組的環境平衡後，機械手指（306）將形成有第一數量的層的基板回傳至第一反應腔體（305），結束步驟S403。所述預定時間大於或等於所述清潔程式的所需時間。In step S403, the low-voltage transmission module (304) returns the substrate formed with the first number of layers to the first reaction chamber after a predetermined time. When the environment of the first reaction chamber and the low-voltage transmission module is balanced, the robot finger (306) returns the substrate formed with the first number of layers to the first reaction chamber (305), and step S403 is ended. The predetermined time is greater than or equal to the required time of the cleaning program.
步驟S404，由第一反應腔體（305）形成一第二數量的層（如M個層）於基板上。第二數量的層被依序地以相同或相似的製造方法形成於基板的第一數量的層的上方。即第二數量的層堆疊於第一數量的層上。在形成所述第二數量的層之前，第一反應腔體（305）可執行其他清潔程式以去除基板的第一數量的層上的污染且使其利於後續的沉積。當基板上已形成預定的第一數量和第二數量總和的層（N+M個層），第一反應腔體（305）停止形成其他的層，結束步驟S404。In step S404, a second number of layers (such as M layers) are formed on the substrate from the first reaction chamber (305). The second number of layers are sequentially formed on the first number of layers of the substrate by the same or similar manufacturing method. That is, the second number of layers are stacked on the first number of layers. Before forming the second number of layers, the first reaction chamber (305) may perform other cleaning procedures to remove contamination on the first number of layers of the substrate and make it convenient for subsequent deposition. When the predetermined sum of the first number and the second number of layers (N+M layers) has been formed on the substrate, the first reaction chamber (305) stops forming other layers, and step S404 is ended.
第五圖顯示本發明沉積方法流程的一第二實施例。並參第三B圖，該方法始於步驟S500，由第一反應腔體（305）形成第一數量的層（如N個層）於基板上。此步驟與前述步驟S400相似或相同。The fifth figure shows a second embodiment of the flow of the deposition method of the present invention. Referring to the third figure B, the method starts at step S500, and a first number of layers (such as N layers) are formed from the first reaction chamber (305) on the substrate. This step is similar or the same as the aforementioned step S400.
步驟S501，由低壓傳輸模組（304）將形成有第一數量的層的基板移除至第一反應腔體（305）之外。此步驟與前述步驟S401相同或相似。In step S501, the low-voltage transmission module (304) removes the substrate formed with the first number of layers to the outside of the first reaction chamber (305). This step is the same as or similar to the aforementioned step S401.
步驟S502，由低壓傳輸模組（304）經過一預定時間將形成有第一數量的層的基板傳輸至第二反應腔體（307）中。根據第二反應腔體（307）的處理條件，低壓傳輸模組（304）可采不同的傳送策略。當第二反應腔體（307）沒有空檔或者正在執行其它處理時，機械手指（306）將基板暫時停放在低壓傳輸模組（304），接著傳送至第二反應腔體（307）。當反應腔體（307）處於可反應的條件時，機械手指（306）可將自第一反應腔體（305）移出的基板直接傳送前往第二反應腔體（307）。因此，所述預定時間可包含基板存放在低壓傳輸模組（304）中的一時間、等待第二反應腔體（307）或下一站執行處理所需要的一時間或基板從第一反應腔體（305）移動至第二反應腔體（307）所需的一時間。由此可知，所述預定時間是指基板從第一反應腔體（305）移動至第二反應腔體（307）所需時間的至少一部分。In step S502, the low-voltage transmission module (304) transmits the substrate formed with the first number of layers to the second reaction chamber (307) after a predetermined time. According to the processing conditions of the second reaction chamber (307), the low-pressure transmission module (304) can adopt different transmission strategies. When the second reaction chamber (307) has no idle position or other processing is being performed, the robot finger (306) temporarily parks the substrate in the low-pressure transmission module (304), and then transfers it to the second reaction chamber (307). When the reaction chamber (307) is in a reactive condition, the robot finger (306) can directly transfer the substrate removed from the first reaction chamber (305) to the second reaction chamber (307). Therefore, the predetermined time may include a time for the substrate to be stored in the low-pressure transmission module (304), a time for waiting for the second reaction chamber (307) or the next station to perform processing, or the substrate from the first reaction chamber. The time required for the body (305) to move to the second reaction chamber (307). It can be seen that the predetermined time refers to at least a part of the time required for the substrate to move from the first reaction chamber (305) to the second reaction chamber (307).
步驟S503，由第二反應腔體（307）形成一第二數量的層（如M個層）於基板的第一數量的層上。此步驟與前述步驟S404大致相同，差別主要在於所述第二數量的層的形成是在有別於第一反應腔體（305）的第二反應腔體（307）所執行。第二反應腔體（307）可配置成在執行所述第二數量的層的形成前執行一清潔程式，以將清潔第二反應腔體（307）或其自低壓傳輸模組（304）載入的基板，達到可反應的條件。最終，第二反應腔體（307）執行第二數量的堆疊後，結束沉積，獲得第一數量和第二數量總和的層（N+M個層）形成於基板上，結束步驟S503。Step S503, forming a second number of layers (such as M layers) on the first number of layers of the substrate from the second reaction chamber (307). This step is roughly the same as the aforementioned step S404, and the difference is mainly that the formation of the second number of layers is performed in a second reaction chamber (307) that is different from the first reaction chamber (305). The second reaction chamber (307) can be configured to perform a cleaning program before performing the formation of the second number of layers, so as to clean the second reaction chamber (307) or carry it from the low-pressure transmission module (304). The imported substrate reaches the conditions that can be reacted. Finally, after the second reaction chamber (307) performs the second number of stacks, the deposition is ended, and the layers (N+M layers) obtained by the sum of the first number and the second number are formed on the substrate, and step S503 is ended.
步驟S504，第一反應腔體（305）執行一清潔程式以去除在形成第一數量的層的期間的腔體內殘存物以接續處理下一基板。此步驟與前述S402相似或相同，即主要差異在於此處的清潔程式是為了第一反應腔體（305）處理下一個新的基板或非第一反應腔體前一次處理的基板。所述清潔套裝程式含使用已知的方法將第一反應腔體（305）在形成第一數量的層之後能再次恢復可進行反應的較佳條件。In step S504, the first reaction chamber (305) performs a cleaning procedure to remove the residues in the chamber during the formation of the first number of layers to continue processing the next substrate. This step is similar or the same as the aforementioned S402, that is, the main difference is that the cleaning program here is for the first reaction chamber (305) to process the next new substrate or the substrate that was not processed previously by the first reaction chamber. The cleaning kit includes using a known method to restore the first reaction chamber (305) to a better condition for reaction after forming the first number of layers.
步驟S503和步驟S504並非僅限於圖示的順序關係。在某些情況中，兩者順序可互換或至少部分同時進行。Step S503 and step S504 are not limited to the sequence relationship shown in the figure. In some cases, the order of the two can be interchanged or performed at least partially simultaneously.
綜上所述，本發明用於多層堆疊薄膜的沉積裝置及方法可解決多層薄膜製造時所遇到的腔內污染問題，藉由將基板暫時移出反應腔體的空擋執行腔體清潔，以便獲得較佳的反應條件，令反應腔體有能力持續堆疊至預定的層數並維持薄膜品質。In summary, the deposition device and method for multilayer stacked films of the present invention can solve the problem of contamination in the cavity encountered during the manufacture of multilayer films. The cavity is cleaned by temporarily removing the substrate from the neutral position of the reaction chamber to obtain The better reaction conditions enable the reaction chamber to be continuously stacked to a predetermined number of layers and maintain the quality of the film.
雖然為了清楚瞭解已經用某些細節來描述前述本發明，吾人將瞭解在申請專利範圍內可實施特定變更與修改。因此，以上實施例僅用於說明，並不設限，並且本發明並不受限於此處說明的細節，但是可在附加之申請專利範圍的領域及等同者下進行修改。Although certain details have been used to describe the foregoing invention for a clear understanding, we will understand that specific changes and modifications can be implemented within the scope of the patent application. Therefore, the above embodiments are only for illustration and are not limited, and the present invention is not limited to the details described here, but can be modified under the scope of the additional patent application and equivalents.
101:反應總成 102:傳輸模組 103:閥門組件 300:沉積裝置 301:傳送盒 302:大氣傳輸模組 303:負載鎖腔體 304:低壓傳輸模組 305:第一反應腔體 306:機械手指 307:第二反應腔體 S200至S204:步驟 S400至S404:步驟 S500至S504:步驟101: reaction assembly 102: Transmission module 103: valve assembly 300: Deposition device 301: Transport Box 302: Atmospheric Transmission Module 303: Load lock cavity 304: Low-voltage transmission module 305: First Reaction Chamber 306: Mechanical Finger 307: Second Reaction Chamber S200 to S204: steps S400 to S404: steps S500 to S504: steps
參照下列圖式與說明，可更進一步理解本發明。非限制性與非窮舉性實例系參照下列圖式而描述。在圖式中的構件並非必須為實際尺寸；重點在於說明結構及原理。With reference to the following drawings and descriptions, the present invention can be further understood. Non-limiting and non-exhaustive examples are described with reference to the following drawings. The components in the drawings do not have to be actual sizes; the focus is on explaining the structure and principles.
第一圖顯示本發明沉積裝置的方塊示意圖。The first figure shows a block diagram of the deposition apparatus of the present invention.
第二圖顯示本發明沉積方法的流程圖。The second figure shows a flow chart of the deposition method of the present invention.
第三A圖顯示本發明沉積裝置的第一實施例方塊示意圖。Fig. 3A shows a block diagram of the first embodiment of the deposition apparatus of the present invention.
第三B圖顯示本發明沉積裝置的第二實施例方塊示意圖。Fig. 3B shows a schematic block diagram of the second embodiment of the deposition apparatus of the present invention.
第四圖顯示本發明沉積方法的第一實施例流程圖。The fourth figure shows a flow chart of the first embodiment of the deposition method of the present invention.
第五圖顯示本發明沉積方法的第二實施例流程圖。The fifth figure shows a flow chart of the second embodiment of the deposition method of the present invention.
S200至S204:步驟S200 to S204: steps
Claims (12)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911414646.3A CN111128809A (en) | 2019-12-31 | 2019-12-31 | Deposition device and method for multilayer stack film |
| CN201911414646.3 | 2019-12-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202127518A true TW202127518A (en) | 2021-07-16 |
Family
ID=70506644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109142166A TW202127518A (en) | 2019-12-31 | 2020-12-01 | Apparatus and method for depositing multiple layers |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111128809A (en) |
| TW (1) | TW202127518A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112813415A (en) * | 2020-12-31 | 2021-05-18 | 拓荆科技股份有限公司 | Method for cleaning inside of cavity |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101801351B1 (en) * | 2010-04-28 | 2017-11-27 | 삼성디스플레이 주식회사 | Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same and organic light emitting display apparatus using the same |
| CN103805958A (en) * | 2012-11-14 | 2014-05-21 | 理想能源设备(上海)有限公司 | Chemical vapor deposition device and cleaning method thereof |
| JP6742265B2 (en) * | 2017-03-28 | 2020-08-19 | 東京エレクトロン株式会社 | Method for suppressing adhesion of cleaning by-product, method for cleaning reaction chamber using the same, and room temperature film forming apparatus |
-
2019
- 2019-12-31 CN CN201911414646.3A patent/CN111128809A/en active Pending
-
2020
- 2020-12-01 TW TW109142166A patent/TW202127518A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN111128809A (en) | 2020-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI518823B (en) | Apparatus and mothod for treating substrate | |
| US9169553B2 (en) | Semiconductor device producing method | |
| US20170069462A1 (en) | Ale smoothness: in and outside semiconductor industry | |
| US8801950B2 (en) | Reduction of a process volume of a processing chamber using a nested dynamic inert volume | |
| KR102316179B1 (en) | Substrate processing method and storage medium | |
| TWI427729B (en) | The method of exchanging the substrate and a substrate processing apparatus | |
| WO1994028578A1 (en) | Plasma processing method | |
| KR20160115794A (en) | Substrate transfer method and substrate processing apparatus | |
| CN110942985A (en) | Etching method, etching apparatus, and storage medium | |
| TW202036755A (en) | Systems and methods for workpiece processing | |
| CN112530800B (en) | Etching method and substrate processing system | |
| WO2020251696A1 (en) | Processing system for forming layers | |
| TW202127518A (en) | Apparatus and method for depositing multiple layers | |
| TW201933395A (en) | Capacitor, manufacturing method of capacitor, and semiconductor equipment | |
| US20140196746A1 (en) | In situ chamber clean with inert hydrogen helium mixture during wafer process | |
| JP4745099B2 (en) | Substrate processing apparatus, transport pick cleaning method, control program, and computer-readable storage medium | |
| KR20200045872A (en) | System For Processing Semiconductor substrate and Method of Depositing Thin Film Using The Same | |
| KR101626467B1 (en) | Substrate tretment apparatus | |
| JP3025811B2 (en) | Substrate processing equipment | |
| US20240258085A1 (en) | Shared exhaust unit and substrate processing apparatus including shared exhaust unit | |
| JP2024088612A (en) | End effector and substrate processing apparatus including end effector | |
| CN110527981B (en) | Atomic layer deposition equipment and method | |
| JPH0786170A (en) | Single wafer hot wall processing system and cleaning method therefor | |
| JPH07288238A (en) | Multi-chamber processor | |
| TW202335205A (en) | Substrate processing apparatus |