TW202107671A - Method for manufacturing semiconductor device having dolmen structure, and method for manufacturing support piece - Google Patents

Method for manufacturing semiconductor device having dolmen structure, and method for manufacturing support piece Download PDF

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TW202107671A
TW202107671A TW109113938A TW109113938A TW202107671A TW 202107671 A TW202107671 A TW 202107671A TW 109113938 A TW109113938 A TW 109113938A TW 109113938 A TW109113938 A TW 109113938A TW 202107671 A TW202107671 A TW 202107671A
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film
support sheet
resin layer
forming
layer
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TWI830906B (en
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板垣圭
尾崎義信
谷口紘平
橋本慎太郎
矢羽田達也
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日商日立化成股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

One aspect of the present disclosure is a method for manufacturing a support piece to be used in the formation of a dolmen structure of a semiconductor device, the method comprising: (A) a step for preparing a layered film comprising, in the stated order, a base material film, an adhesive layer, and a support piece formation film made of a thermosetting resin layer, for example; (B) a step for forming a plurality of support pieces on the surface of the adhesive layer by solidifying the support piece formation film; and (C) a step for picking up the support pieces in a state where the support pieces are pushed up from the base material film side by a member having a plurality of needles or a flat distal end surface.

Description

具有支石墓結構的半導體裝置的製造方法及支持片的製造方法Manufacturing method of semiconductor device with dolmen structure and manufacturing method of supporting sheet

本揭示是有關於一種具有支石墓結構的半導體裝置的製造方法，所述支石墓結構包括：基板；第一晶片，配置在基板上；多個支持片，配置於基板上且為第一晶片周圍；以及第二晶片，由多個支持片支持並且配置成覆蓋第一晶片。另外，本揭示是有關於一種具有支石墓結構的半導體裝置的製造中所使用的支持片的製造方法。再者，支石墓（dolmen）是石墓的一種，具備多個支柱石及載置在其上的板狀的岩石。在具有支石墓結構的半導體裝置中，支持片相當於「支柱石」，第二晶片相當於「板狀的岩石」。The present disclosure relates to a method for manufacturing a semiconductor device with a dolmen structure. The dolmen structure includes: a substrate; a first chip arranged on the substrate; a plurality of supporting pieces arranged on the substrate and being the first Around the wafer; and the second wafer, supported by a plurality of support sheets and configured to cover the first wafer. In addition, the present disclosure relates to a method for manufacturing a support sheet used in the manufacture of a semiconductor device having a dolmen structure. Furthermore, a dolmen is a type of dolmen, which has a plurality of pillar stones and a slab-shaped rock placed on it. In a semiconductor device with a dolmen structure, the supporting piece is equivalent to a "pillar stone", and the second chip is equivalent to a "plate-shaped rock."

近年來，在半導體裝置的領域，要求高積體、小型化以及高速化。作為半導體裝置的一形態，在配置於基板上的控制器晶片上積層半導體晶片的結構受到關注。例如專利文獻1揭示了一種半導體晶粒組件，該半導體晶粒組件包括控制器晶粒、以及在控制器晶粒上由支持構件支持的記憶體晶粒。專利文獻1的圖1A所示的半導體組件100可謂是具有支石墓結構。即，半導體組件100包括封裝基板102、配置在封裝基板102表面上的控制器晶粒103、配置在控制器晶粒103上方的記憶體晶粒106a、記憶體晶粒106b、以及支持記憶體晶粒106a的支持構件130a、支持構件130b。 [現有技術文獻] [專利文獻]In recent years, in the field of semiconductor devices, high integration, miniaturization, and high speed are required. As one form of the semiconductor device, a structure in which a semiconductor wafer is laminated on a controller wafer arranged on a substrate has attracted attention. For example, Patent Document 1 discloses a semiconductor die assembly including a controller die and a memory die supported by a supporting member on the controller die. The semiconductor module 100 shown in FIG. 1A of Patent Document 1 can be said to have a dolmen structure. That is, the semiconductor device 100 includes a package substrate 102, a controller die 103 disposed on the surface of the package substrate 102, a memory die 106a, a memory die 106b, and a supporting memory die 103 disposed above the controller die 103. The support member 130a and the support member 130b of the pellet 106a. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特表2017-515306號公報[Patent Document 1] Japanese Patent Publication No. 2017-515306

[發明所欲解決之課題] 專利文獻1揭示了作為支持構件（支持片），能夠使用矽等半導體材料，更具體而言，能夠使用切割半導體晶圓而得到的半導體材料的斷片（參照專利文獻1的[0012]、[0014]及圖2）。就使用半導體晶圓製造支石墓結構用的支持片而言，與普通的半導體晶片的製造同樣，例如需要以下的各步驟。 （1）在半導體晶圓上貼附背面研磨帶（back grind tape）的步驟； （2）背面研磨半導體晶圓的步驟； （3）對切割環與配置在其中的背面研磨後的半導體晶圓貼附具有黏著層及接著劑層的膜（切割-黏晶一體型膜）的步驟； （4）自半導體晶圓剝離背面研磨帶的步驟； （5）將半導體晶圓單片化的步驟； （6）自黏著層拾取包含半導體晶片與接著劑片的積層體的支持片的步驟。[The problem to be solved by the invention] Patent Document 1 discloses that as a support member (support sheet), semiconductor materials such as silicon can be used, more specifically, fragments of semiconductor materials obtained by dicing a semiconductor wafer can be used (see [0012] and [0014 of Patent Document 1] ] And Figure 2). The use of a semiconductor wafer to manufacture a support sheet for a dolmen structure is the same as the manufacture of a normal semiconductor wafer, for example, the following steps are required. (1) The step of attaching back grind tape to the semiconductor wafer; (2) Steps of back grinding of semiconductor wafers; (3) A step of attaching a film with an adhesive layer and an adhesive layer (a dicing-bonding integrated film) to the dicing ring and the back-grinded semiconductor wafer disposed therein; (4) The step of peeling the back polishing tape from the semiconductor wafer; (5) The step of singulating semiconductor wafers; (6) A step of picking up a support sheet including a laminate of a semiconductor wafer and an adhesive sheet from the adhesive layer.

本揭示提供一種支持片的製造方法，其能夠有效率地製造具有支石墓結構的半導體裝置的製造中所使用的支持片，進而可有助於半導體裝置的生產效率的提高。另外，本揭示提供一種使用所述支持片來有效地製造具有支石墓結構的半導體裝置的方法。 [解決課題之手段]The present disclosure provides a method for manufacturing a support sheet, which can efficiently manufacture a support sheet used in the manufacture of a semiconductor device with a dolmen structure, and further contributes to the improvement of the production efficiency of the semiconductor device. In addition, the present disclosure provides a method for efficiently manufacturing a semiconductor device having a dolmen structure using the support sheet. [Means to solve the problem]

本揭示的一個方面是有關於一種具有支石墓結構的半導體裝置的製造中所使用的支持片的製造方法。One aspect of the present disclosure relates to a method for manufacturing a support sheet used in the manufacture of a semiconductor device with a dolmen structure.

本揭示的製造方法的第一形態包括以下的步驟。 （A）準備積層膜的步驟，所述積層膜依次具備：基材膜、黏著層、以及支持片形成用膜； （B）藉由將支持片形成用膜單片化，而在黏著層的表面上形成多個支持片的步驟； （C）在藉由多個針自基材膜側上推支持片的狀態下拾取支持片的步驟， 所述支持片形成用膜為以下的膜的任一種。 ·由熱硬化性樹脂層構成的膜； ·由使熱硬化性樹脂層中至少一部分硬化而成的層構成的膜； ·包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的樹脂層的多層膜； ·包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的金屬層的多層膜。The first aspect of the manufacturing method of the present disclosure includes the following steps. (A) The step of preparing a laminated film, the laminated film includes in this order: a base film, an adhesive layer, and a film for forming a support sheet; (B) A step of forming a plurality of supporting sheets on the surface of the adhesive layer by singulating the film for forming the supporting sheet; (C) The step of picking up the support sheet while pushing the support sheet from the side of the base film by a plurality of needles, The film for forming a support sheet is any of the following films. ·A film composed of a thermosetting resin layer; · A film composed of a layer formed by curing at least a part of the thermosetting resin layer; · A multilayer film comprising a thermosetting resin layer and a resin layer with higher rigidity than the thermosetting resin layer; · A multilayer film including a thermosetting resin layer and a metal layer having higher rigidity than the thermosetting resin layer.

本揭示的製造方法的第二形態包括以下的步驟。 （A）準備積層膜的步驟，所述積層膜依次具備：基材膜、黏著層、以及支持片形成用膜； （B）藉由將支持片形成用膜單片化，而在黏著層的表面上形成多個支持片的步驟； （C）在藉由具有平坦的前端面的構件自基材膜側上推支持片的狀態下拾取支持片的步驟， 所述支持片形成用膜為以下的膜的任一種。 ·由熱硬化性樹脂層構成的膜； ·由使熱硬化性樹脂層中至少一部分硬化而成的層構成的膜； ·包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的樹脂層的多層膜； ·包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的金屬層的多層膜。The second aspect of the manufacturing method of the present disclosure includes the following steps. (A) The step of preparing a laminated film, the laminated film includes in this order: a base film, an adhesive layer, and a film for forming a support sheet; (B) A step of forming a plurality of supporting sheets on the surface of the adhesive layer by singulating the film for forming the supporting sheet; (C) A step of picking up the support sheet in a state where the support sheet is pushed up from the base film side by a member having a flat front end surface, The film for forming a support sheet is any of the following films. ·A film composed of a thermosetting resin layer; · A film composed of a layer formed by curing at least a part of the thermosetting resin layer; · A multilayer film comprising a thermosetting resin layer and a resin layer with higher rigidity than the thermosetting resin layer; · A multilayer film including a thermosetting resin layer and a metal layer having higher rigidity than the thermosetting resin layer.

本揭示中，支持片形成用膜所具有的樹脂層例如為聚醯亞胺層。樹脂層例如由與熱硬化性樹脂層不同的材質構成。支持片形成用膜所具有的金屬層例如為銅層或鋁層。再者，上述熱硬化性樹脂層的熱硬化後的剛性可低於樹脂層或金屬層的剛性，亦可高於樹脂層或金屬層的剛性。 剛性是指物體對彎曲或扭曲能夠承受破壞的能力。In the present disclosure, the resin layer included in the film for forming a support sheet is, for example, a polyimide layer. The resin layer is made of, for example, a material different from the thermosetting resin layer. The metal layer included in the film for forming a support sheet is, for example, a copper layer or an aluminum layer. Furthermore, the rigidity of the thermosetting resin layer after thermosetting may be lower than the rigidity of the resin layer or the metal layer, or may be higher than the rigidity of the resin layer or the metal layer. Rigidity refers to the ability of an object to withstand damage to bending or twisting.

在本揭示的所述製造方法中，使用將支持片形成用膜單片化而獲得的支持片。藉此，與使用切割半導體晶圓而得到的半導體材料的斷片作為支持片的先前的製造方法相比，能夠簡化製作支持片的步驟。即，先前需要上述（1）～（6）的步驟，與此相對，支持片形成用膜不包含半導體晶圓，故能夠省略與半導體晶圓的背面研磨相關的（1）、（2）及（4）的步驟。另外，由於不使用較樹脂材料昂貴的半導體晶圓，故亦能夠削減成本。再者，由於熱硬化性樹脂層相對於其他構件（例如基板）具有接著性，因此可不在支持片上另外設置接著劑層等。In the manufacturing method of the present disclosure, a support sheet obtained by singulating the film for forming a support sheet is used. Thereby, compared with the conventional manufacturing method which uses the fragment of the semiconductor material obtained by dicing a semiconductor wafer as a support sheet, the process of manufacturing a support sheet can be simplified. That is, the steps (1) to (6) above were previously required. In contrast, the film for forming a support sheet does not include a semiconductor wafer, so it is possible to omit (1), (2) and (2) and related to the back grinding of semiconductor wafers. (4) Steps. In addition, since semiconductor wafers that are more expensive than resin materials are not used, costs can also be reduced. Furthermore, since the thermosetting resin layer has adhesiveness to other members (for example, a substrate), it is not necessary to separately provide an adhesive layer or the like on the support sheet.

根據本發明者等人的研究，支持片自黏著層的拾取性取決於支持片與黏著層的界面的剝離（以下稱為「界面剝離」）的容易度、及支持片的邊緣自黏著劑層的剝離（以下稱為「邊緣剝離」）的容易度。在所述第一形態的製造方法的（C）步驟中，藉由多個針上推支持片，而容易產生支持片與黏著層的界面剝離，能夠實現支持片自黏著層的優異的拾取性。According to research by the inventors, the pick-up of the self-adhesive layer of the support sheet depends on the ease of peeling of the interface between the support sheet and the adhesive layer (hereinafter referred to as "interface peeling"), and the edge self-adhesive layer of the support sheet The ease of peeling (hereinafter referred to as "edge peeling"). In the step (C) of the manufacturing method of the first aspect, the support sheet is pushed up by a plurality of needles, so that the interface between the support sheet and the adhesive layer is easily peeled, and excellent pick-up properties of the support sheet from the adhesive layer can be realized. .

所述第二形態的製造方法基於本發明者等人根據以下現象得到的見解。即，例如，在紫外線硬化型黏著層的表面上形成多個支持片之後，即使在藉由紫外線照射使黏著層的黏著力降低之後，在支持片的拾取步驟中亦會產生無法實現充分的拾取性的現象。為了改善此種情況，本發明者等人研究了在拾取步驟中使用的上推裝置的種類。其結果發現，具備具有平坦的前端面的構件的上推裝置對提高支持片的邊緣的剝離性有效。藉由用平坦的前端面自基材膜側上推支持片，與用多個針上推支持片的情況相比，能夠抑制在支持片上產生因上推而引起的痕跡，並且能夠有效率地將支持片的邊緣自黏著層剝離。再者，支持片的邊緣不易剝離的狀況不限於採用紫外線硬化型的黏著層的情況，即使在採用感壓型的黏著層的情況下，例如在將支持片形成用膜單片化時，超出支持片形成用膜及黏著層而將基材膜的一部分亦切斷的情況下亦會產生。The production method of the second aspect is based on the knowledge obtained by the inventors based on the following phenomenon. That is, for example, after a plurality of support sheets are formed on the surface of the ultraviolet-curable adhesive layer, even after the adhesive force of the adhesive layer is reduced by ultraviolet irradiation, it may not be possible to achieve sufficient pick-up in the pick-up step of the support sheet. The phenomenon of sex. In order to improve this situation, the inventors studied the types of push-up devices used in the picking step. As a result, it was found that the push-up device provided with a member having a flat front end surface is effective for improving the peelability of the edge of the support sheet. By pushing the support sheet up from the base film side with a flat front end surface, compared to the case where the support sheet is pushed up with a plurality of needles, it is possible to suppress marks caused by pushing up on the support sheet, and it is possible to efficiently Peel the edge of the support sheet from the adhesive layer. In addition, the situation where the edge of the support sheet is not easily peeled off is not limited to the case of using an ultraviolet curable adhesive layer. Even in the case of using a pressure sensitive adhesive layer, for example, when the support sheet forming film is singulated, it exceeds It also occurs when a part of the base film is also cut by supporting the film for sheet formation and the adhesive layer.

在支持片形成用膜為由熱硬化性樹脂層構成的膜、或為由使熱硬化性樹脂層中的至少一部分硬化而成的層構成的膜的情況下，自實現更優異的拾取性的觀點出發，（B）步驟可依次包括：將切口形成至支持片形成用膜的厚度方向的中途的步驟；及藉由擴展而將經冷卻的狀態的支持片形成用膜單片化的步驟。另一方面，在支持片形成用膜為包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的樹脂層或金屬層的多層膜的情況下，自同樣的觀點出發，在（A）步驟中準備的積層膜中，熱硬化性樹脂層位於樹脂層與黏著層之間、或金屬層與黏著層之間，（B）步驟亦可依次包括：切斷支持片形成用膜的樹脂層或金屬層並且將切口形成至熱硬化性樹脂層的厚度方向的中途的步驟；及藉由擴展將經冷卻的狀態的支持片形成用膜單片化的步驟。在（B）步驟中，將熱硬化性樹脂層半切割後，藉由冷卻擴展將熱硬化性樹脂層單片化，藉此接著劑片的邊緣不會進入黏著層，故能夠更高度地實現優異的拾取性。When the film for forming a support sheet is a film composed of a thermosetting resin layer, or a film composed of a layer formed by curing at least a part of the thermosetting resin layer, it is possible to realize more excellent pick-up properties. From a viewpoint, the step (B) may sequentially include a step of forming a cut to the middle of the thickness direction of the support sheet forming film; and a step of singulating the cooled support sheet forming film by expansion. On the other hand, when the film for forming a support sheet is a multilayer film including a thermosetting resin layer and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer, from the same viewpoint, In the laminated film prepared in the step (A), the thermosetting resin layer is located between the resin layer and the adhesive layer, or between the metal layer and the adhesive layer, and the step (B) can also sequentially include: cutting the film for forming the support sheet A step of forming a cut to the middle of the thickness direction of the thermosetting resin layer; and a step of singulating the film for forming a support sheet in a cooled state by expansion. In step (B), after the thermosetting resin layer is half-cut, the thermosetting resin layer is singulated by cooling and expanding, so that the edge of the adhesive sheet does not enter the adhesive layer, so it can be realized more highly Excellent pick-up.

本揭示的一個方面是有關於一種具有支石墓結構的半導體裝置的製造方法。該製造方法包括以下的步驟。 （D）在基板上配置第一晶片的步驟； （E）在基板上且為第一晶片的周圍或應配置第一晶片的區域的周圍，配置藉由本揭示的製造方法而製造的多個支持片的步驟； （F）準備帶接著劑片的晶片的步驟，所述帶接著劑片的晶片具備第二晶片、及設置在第二晶片的一個面上的接著劑片； （G）藉由在多個支持片的表面上配置帶接著劑片的晶片來構築支石墓結構的步驟。One aspect of the present disclosure relates to a method for manufacturing a semiconductor device with a dolmen structure. The manufacturing method includes the following steps. (D) The step of arranging the first wafer on the substrate; (E) A step of arranging a plurality of support sheets manufactured by the manufacturing method of the present disclosure on the substrate and around the first chip or around the area where the first chip should be arranged; (F) A step of preparing a wafer with an adhesive sheet, the wafer with an adhesive sheet including a second wafer and an adhesive sheet provided on one surface of the second wafer; (G) A step of constructing a dolmen structure by arranging wafers with adhesive sheets on the surfaces of a plurality of supporting sheets.

（D）步驟及（E）步驟可先實施任一項。在先實施（D）步驟的情況下，在（E）步驟中，只要在基板上且為第一晶片的周圍配置多個支持片即可。另一方面，在先實施（E）步驟的情況下，在（E）步驟中，在基板上且為應配置第一晶片的區域的周圍配置多個支持片，然後，在（D）步驟中，在該區域配置第一晶片即可。 [發明的效果]Either step (D) or (E) can be implemented first. In the case of performing step (D) first, in step (E), it is only necessary to arrange a plurality of support sheets on the substrate and around the first wafer. On the other hand, when step (E) is performed first, in step (E), a plurality of support sheets are placed on the substrate around the area where the first wafer should be placed, and then in step (D) Just place the first wafer in this area. [Effects of the invention]

根據本揭示，提供一種能夠有效率地製造具有支石墓結構的半導體裝置的製造中所使用的支持片，可有助於半導體裝置的生產效率的提高的支持片的製造方法。另外，根據本揭示，提供一種使用所述支持片來有效率地製造具有支石墓結構的半導體裝置的方法。According to the present disclosure, there is provided a support sheet manufacturing method that can efficiently manufacture a support sheet used in the manufacture of a semiconductor device having a dolmen structure and can contribute to the improvement of the production efficiency of the semiconductor device. In addition, according to the present disclosure, a method for efficiently manufacturing a semiconductor device having a dolmen structure using the support sheet is provided.

以下，參照圖式對本揭示的實施方式進行詳細說明。其中，本發明不限定於以下的實施方式。再者，本說明書中，所謂「(甲基)丙烯酸」是指丙烯酸或甲基丙烯酸，所謂「(甲基)丙烯酸酯」是指丙烯酸酯或與其對應的甲基丙烯酸酯。所謂「A或B」，只要包含A與B的任一者即可，亦可兩者均包含。Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments. In addition, in this specification, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylate" means acrylate or its corresponding methacrylate. The so-called "A or B" should just include any one of A and B, or both may be included.

於本說明書中，用語「層」於以平面圖的形式進行觀察時，除了於整個面形成的形狀的結構以外，亦包含部分地形成的形狀的結構。另外，於本說明書中，「步驟」這一用語不僅是指獨立的步驟，即便在無法與其他步驟明確地加以區分的情況下，只要達成該步驟的預期的作用，則亦包含於本用語中。另外，使用「～」所表示的數值範圍表示包含「～」的前後所記載的數值分別作為最小值及最大值的範圍。In this specification, when the term "layer" is viewed in the form of a plan view, in addition to the structure of the shape formed on the entire surface, it also includes the structure of the shape formed partially. In addition, in this specification, the term "step" not only refers to an independent step, even if it cannot be clearly distinguished from other steps, as long as the step achieves the expected effect, it is also included in this term. . In addition, the numerical range represented by "~" means a range that includes the numerical values described before and after "~" as the minimum value and the maximum value, respectively.

於本說明書中，關於組成物中的各成分的含量，於在組成物中存在多種相當於各成分的物質的情況下，只要無特別說明，則是指組成物中存在的所述多種物質的合計量。另外，例示材料只要無特別說明，則可單獨使用，亦可組合使用二種以上。另外，本說明書中階段性地記載的數值範圍中，某階段的數值範圍的上限值或下限值亦可替換為其他階段的數值範圍的上限值或下限值。另外，本說明書中所記載的數值範圍中，該數值範圍的上限值或下限值可替換為實施例中所示的值。In this specification, regarding the content of each component in the composition, when there are multiple substances corresponding to each component in the composition, unless otherwise specified, it means the content of the multiple substances present in the composition. Total amount. In addition, the exemplified materials may be used singly, or two or more of them may be used in combination, unless otherwise specified. In addition, in the numerical ranges described step by step in this specification, the upper limit or lower limit of the numerical range of a certain stage may be replaced with the upper limit or lower limit of the numerical range of another stage. In addition, in the numerical range described in this specification, the upper limit or the lower limit of the numerical range can be replaced with the values shown in the examples.

（半導體裝置） 圖1是示意性地表示具有支石墓結構的半導體裝置的一例的剖面圖。該圖所示的半導體裝置100包括：基板10、配置在基板10的表面上的晶片T1（第一晶片）、配置於基板10的表面上且為晶片T1的周圍的多個支持片Dc、配置於晶片T1的上方的晶片T2（第二晶片）、由晶片T2與多個支持片Dc夾持的接著劑片Tc、積層在晶片T2上的晶片T3、晶片T4、將基板10的表面上的電極（未圖示）與晶片T1～晶片T4分別電連接的多個導線w；以及填充在晶片T1與晶片T2的間隙等中的密封材50。(Semiconductor device) FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor device having a dolmen structure. The semiconductor device 100 shown in the figure includes: a substrate 10, a wafer T1 (first wafer) arranged on the surface of the substrate 10, a plurality of supporting sheets Dc arranged on the surface of the substrate 10 and surrounding the wafer T1, and arranged The wafer T2 (the second wafer) above the wafer T1, the adhesive sheet Tc sandwiched between the wafer T2 and the plurality of support sheets Dc, the wafer T3 and the wafer T4 laminated on the wafer T2, the wafers on the surface of the substrate 10 The electrode (not shown) is electrically connected to a plurality of wires w from the wafer T1 to the wafer T4, respectively; and the sealing material 50 filled in the gap between the wafer T1 and the wafer T2 or the like.

在本實施方式中，藉由多個支持片Dc、晶片T2、以及位於支持片Dc與晶片T2之間的接著劑片Tc而在基板10上構成支石墓結構。晶片T1與接著劑片Tc分離。藉由適當設定支持片Dc的厚度，能夠確保用於連接晶片T1的上表面與基板10的導線w的空間。藉由使晶片T1與接著劑片Tc分離，能夠防止與晶片T1連接的導線w的上部接觸晶片T2所導致的導線w的短路。另外，由於無需將導線埋入與晶片T2接觸的接著劑片Tc，故具有能夠減薄接著劑片Tc的優點。In this embodiment, a dolmen structure is formed on the substrate 10 by a plurality of supporting pieces Dc, wafers T2, and adhesive pieces Tc located between the supporting pieces Dc and the wafer T2. The wafer T1 is separated from the adhesive sheet Tc. By appropriately setting the thickness of the support sheet Dc, it is possible to ensure a space for connecting the upper surface of the chip T1 and the wire w of the substrate 10. By separating the chip T1 from the adhesive sheet Tc, it is possible to prevent the short circuit of the wire w caused by the upper portion of the wire w connected to the chip T1 contacting the chip T2. In addition, since there is no need to bury the wires in the adhesive sheet Tc in contact with the wafer T2, there is an advantage that the adhesive sheet Tc can be thinned.

如圖1所示，晶片T1與晶片T2之間的接著劑片Tc覆蓋晶片T2中的與晶片T1相對的區域，並且自區域連續地延伸至晶片T2的周緣側。即，一個接著劑片Tc覆蓋晶片T2的區域，並夾設在晶片T2與多個支持片之間而將該些接著。再者，圖1中示出了接著劑片Tc設置成覆蓋晶片T2的一個面（下表面）的整體的形態。然而，由於接著劑片Tc在半導體裝置100的製造過程中可能收縮，因此只要實質上覆蓋晶片T2的一個面（下表面）的整體即可，例如，於晶片T2的周緣的一部分亦可存在未被接著劑片Tc覆蓋的部位。圖1中的晶片T2的下表面相當於晶片的背面。近年來晶片的背面多形成有凹凸。藉由晶片T2背面的實質上的整體被接著劑片Tc覆蓋，能夠抑制晶片T2產生裂縫或破裂。As shown in FIG. 1, the adhesive sheet Tc between the wafer T1 and the wafer T2 covers an area of the wafer T2 opposite to the wafer T1, and continuously extends from the area to the peripheral edge side of the wafer T2. That is, one adhesive sheet Tc covers the area of the wafer T2, and is sandwiched between the wafer T2 and a plurality of support sheets to bond them. In addition, FIG. 1 shows a form in which the adhesive sheet Tc is provided so as to cover the entire one surface (lower surface) of the wafer T2. However, since the adhesive sheet Tc may shrink during the manufacturing process of the semiconductor device 100, it only needs to substantially cover the whole of one surface (lower surface) of the wafer T2. For example, there may be a portion of the peripheral edge of the wafer T2. The area covered by the adhesive sheet Tc. The lower surface of the wafer T2 in FIG. 1 corresponds to the back surface of the wafer. In recent years, irregularities are often formed on the back surface of the wafer. Since the substantially entire back surface of the chip T2 is covered with the adhesive sheet Tc, it is possible to suppress the occurrence of cracks or breaks in the chip T2.

基板10可以是有機基板，亦可以是引線框架等金屬基板。基板10中，自抑制半導體裝置100的翹曲的觀點來看，基板10的厚度例如為90 μm～300 μm，亦可為90 μm～210 μm。The substrate 10 may be an organic substrate or a metal substrate such as a lead frame. In the substrate 10, from the viewpoint of suppressing the warpage of the semiconductor device 100, the thickness of the substrate 10 is, for example, 90 μm to 300 μm, or may be 90 μm to 210 μm.

晶片T1例如是控制器晶片，藉由接著劑片T1c接著於基板10且藉由導線w與基板10電連接。俯視下的晶片T1的形狀例如為矩形（正方形或長方形）。晶片T1的一邊的長度例如為5 mm以下，亦可為2 mm～5 mm或1 mm～5 mm。晶片T1的厚度例如為10 μm～150 μm，亦可為20 μm～100 μm。The chip T1 is, for example, a controller chip, which is bonded to the substrate 10 by the adhesive sheet T1c and electrically connected to the substrate 10 by the wire w. The shape of the wafer T1 in a plan view is, for example, a rectangle (square or rectangle). The length of one side of the wafer T1 is, for example, 5 mm or less, and may also be 2 mm to 5 mm or 1 mm to 5 mm. The thickness of the wafer T1 is, for example, 10 μm to 150 μm, or 20 μm to 100 μm.

晶片T2例如是記憶體晶片，並經由接著劑片Tc而接著在支持片Dc上。俯視時，晶片T2具有大於晶片T1的尺寸。俯視下的晶片T2的形狀例如為矩形（正方形或長方形）。晶片T2的一邊的長度例如為20 mm以下，亦可為4 mm～20 mm或4 mm～12 mm。晶片T2的厚度例如是10 μm～170 μm，亦可為20 μm～120 μm。再者，晶片T3、晶片T4亦例如是記憶體晶片，經由接著劑片Tc接著在晶片T2上。晶片T3、晶片T4的一邊的長度只要與晶片T2相同即可，晶片T3、晶片T4的厚度亦與晶片T2相同即可。The chip T2 is, for example, a memory chip, and is attached to the support sheet Dc via the adhesive sheet Tc. When viewed from above, the wafer T2 has a size larger than that of the wafer T1. The shape of the wafer T2 in a plan view is, for example, a rectangle (square or rectangle). The length of one side of the wafer T2 is, for example, 20 mm or less, and may be 4 mm to 20 mm or 4 mm to 12 mm. The thickness of the wafer T2 is, for example, 10 μm to 170 μm, or 20 μm to 120 μm. Furthermore, the chip T3 and the chip T4 are also, for example, memory chips, which are attached to the chip T2 via the adhesive sheet Tc. The length of one side of the wafer T3 and the wafer T4 may be the same as the wafer T2, and the thickness of the wafer T3 and the wafer T4 may also be the same as the wafer T2.

支持片Dc發揮在晶片T1的周圍形成空間的間隔物的作用。支持片Dc為由熱硬化性樹脂組成物的硬化物構成。再者，如圖2的（a）所示，可在晶片T1的兩側的隔開的位置配置兩個支持片Dc（形狀：長方形），亦可如圖2的（b）所示，在與晶片T1的角部對應的位置分別配置一個支持片Dc（形狀：正方形，共計4個）。俯視下的支持片Dc的一邊的長度例如為20 mm以下，亦可為1 mm～20 mm或1 mm～12 mm。支持片Dc的厚度（高度）例如為10 μm～180 μm，亦可為20 μm～120 μm。The support sheet Dc functions as a spacer that forms a space around the wafer T1. The support sheet Dc is composed of a cured product of a thermosetting resin composition. Furthermore, as shown in Figure 2(a), two support pieces Dc (shape: rectangular) can be arranged at spaced positions on both sides of the wafer T1, or as shown in Figure 2(b), One support piece Dc (shape: square, four in total) is arranged at a position corresponding to the corner of the wafer T1. The length of one side of the support sheet Dc in a plan view is, for example, 20 mm or less, and may be 1 mm to 20 mm or 1 mm to 12 mm. The thickness (height) of the support sheet Dc is, for example, 10 μm to 180 μm, or 20 μm to 120 μm.

＜第一實施方式＞ （支持片的製造方法） 本實施方式的支持片的製造方法包括以下的步驟。 （A）準備支持片形成用積層膜20（以下，視情況而稱為「積層膜20」）的步驟，其依次具備：基材膜1；黏著層2，具有與基材膜1相對的第一面f1及其相反側的第二面f2；以及支持片形成用膜D，以覆蓋黏著層2的第二面f2的中央部的方式配置（參照圖3的（a）及圖3的（b））； （B）藉由將支持片形成用膜D單片化，而在黏著層2的第二面f2上形成多個支持片的步驟（參照圖5的（b））； （C）在用多個針N將支持片自基材膜側上推的狀態下拾取支持片Da的步驟（參照圖6的（b））。 再者，圖1所示的支持片Dc是熱硬化性樹脂組成物硬化後的支持片。另一方面，支持片Da是熱硬化性樹脂組成物完全硬化之前的狀態的支持片。<First Embodiment> (The manufacturing method of supporting film) The manufacturing method of the support sheet of this embodiment includes the following steps. (A) A step of preparing a laminated film 20 for forming a support sheet (hereinafter, referred to as "laminated film 20" as appropriate), which sequentially includes: a base film 1; an adhesive layer 2, which has a second layer opposite to the base film 1. One surface f1 and the second surface f2 on the opposite side; and the support sheet forming film D are arranged to cover the center of the second surface f2 of the adhesive layer 2 (see FIG. 3(a) and FIG. 3( b)); (B) A step of forming a plurality of supporting sheets on the second surface f2 of the adhesive layer 2 by singulating the film D for forming a supporting sheet (refer to FIG. 5(b)); (C) A step of picking up the supporting sheet Da in a state where the supporting sheet is pushed up from the base film side with a plurality of needles N (refer to FIG. 6(b)). In addition, the support sheet Dc shown in FIG. 1 is a support sheet after the thermosetting resin composition is cured. On the other hand, the support sheet Da is a support sheet in a state before the thermosetting resin composition is completely cured.

[（A）步驟] 積層膜20具備基材膜1、黏著層2、及支持片形成用膜D。基材膜1例如為聚對苯二甲酸乙二酯膜（PET（polyethylene terephthalate）膜）、聚烯烴膜。作為基材膜1，可使用具有熱收縮性的膜。黏著層2具有與基材膜1相對的第一面f1及其相反側的第二面f2。黏著層2藉由沖孔等形成為圓形（參照圖3的（a））。黏著層2為由感壓型的黏著劑構成。再者，黏著層2可含有具有光反應性的具有碳-碳雙鍵的樹脂，亦可不含有。例如，黏著層2可藉由對其規定區域照射紫外線而降低該區域的黏著性，例如，亦可殘存具有光反應性的具有碳-碳雙鍵的樹脂。[(A) Step] The laminated film 20 includes a base film 1, an adhesive layer 2, and a film D for forming a support sheet. The base film 1 is, for example, a polyethylene terephthalate film (PET (polyethylene terephthalate) film) or a polyolefin film. As the base film 1, a film having heat shrinkability can be used. The adhesive layer 2 has a first surface f1 facing the base film 1 and a second surface f2 on the opposite side thereof. The adhesive layer 2 is formed in a circular shape by punching or the like (refer to FIG. 3(a)). The adhesive layer 2 is composed of a pressure-sensitive adhesive. Furthermore, the adhesive layer 2 may or may not contain a photoreactive resin having a carbon-carbon double bond. For example, the adhesive layer 2 can be irradiated with ultraviolet rays to a predetermined area to reduce the adhesiveness of the area. For example, a photoreactive resin with a carbon-carbon double bond may remain.

支持片形成用膜D藉由沖孔等形成為圓形，具有較黏著層2小的直徑（參照圖3的（a））。支持片形成用膜D為由熱硬化性樹脂組成物構成。構成支持片形成用膜D的熱硬化性樹脂組成物經過半硬化（B階段）狀態，藉由之後的硬化處理能夠成為完全硬化物（C階段）狀態。熱硬化性樹脂組成物含有環氧樹脂、硬化劑、彈性體（例如丙烯酸樹脂），並根據需要進一步含有無機填料及硬化促進劑等。對於構成支持片形成用膜D的熱硬化性樹脂組成物的詳細情況將在後面敘述。The film D for supporting sheet formation is formed into a circular shape by punching or the like, and has a smaller diameter than the adhesive layer 2 (see FIG. 3(a)). The film D for forming a support sheet is composed of a thermosetting resin composition. The thermosetting resin composition constituting the film D for forming a support sheet undergoes a semi-cured (B-stage) state, and can become a fully cured (C-stage) state by subsequent curing treatment. The thermosetting resin composition contains an epoxy resin, a curing agent, an elastomer (for example, an acrylic resin), and further contains an inorganic filler, a curing accelerator, and the like as necessary. The details of the thermosetting resin composition constituting the film D for forming a support sheet will be described later.

積層膜20例如可藉由將第一積層膜與第二積層膜貼合來製造，所述第一積層膜具有基材膜1且在基材膜1的表面上具有黏著層2，所述第二積層膜具有覆蓋膜3且在覆蓋膜3的表面上具有支持片形成用膜D（參照圖4）。第一積層膜可經過如下步驟而獲得：在基材膜1的表面上藉由塗佈而形成黏著層的步驟、以及藉由沖孔等將黏著層加工成規定形狀（例如圓形）的步驟。第二積層膜可經過如下步驟而獲得：在覆蓋膜3（例如PET膜或聚乙烯膜）的表面上藉由塗佈而形成支持片形成用膜的步驟、及藉由沖孔等將支持片形成用膜加工成規定的形狀（例如、圓形）的步驟。當使用積層膜20時，覆蓋膜3在適當的時機被剝離。The laminated film 20 can be produced, for example, by laminating a first laminated film having a base film 1 and an adhesive layer 2 on the surface of the base film 1 and a second laminated film. The two-layered film has a cover film 3 and has a support sheet forming film D on the surface of the cover film 3 (see FIG. 4 ). The first laminated film can be obtained through the following steps: a step of forming an adhesive layer on the surface of the base film 1 by coating, and a step of processing the adhesive layer into a predetermined shape (for example, a circle) by punching, etc. . The second laminated film can be obtained through the following steps: a step of forming a film for forming a support sheet by coating on the surface of the cover film 3 (for example, a PET film or a polyethylene film), and a step of forming the support sheet by punching, etc. The step of processing the forming film into a predetermined shape (for example, a circular shape). When the laminated film 20 is used, the cover film 3 is peeled off at an appropriate timing.

[（B）步驟] 如圖5的（a）所示，將切割環DR貼附於積層膜20。即，將切割環DR貼附於黏著層2的周緣區域2a，成為在切割環DR的內側配置有支持片形成用膜D的狀態。藉由切割將支持片形成用膜D單片化（參照圖5的（b））。藉此，能夠自支持片形成用膜D得到多個支持片Da。之後，如圖5的（c）所示，藉由用環R將基材膜1中的切割環DR的內側區域1a上推，對基材膜1賦予張力。藉此，能夠擴大鄰接的支持片Da的間隔。再者，較佳為用以單片化的切口形成至支持片形成用膜D的外緣。支持片形成用膜D的直徑例如可為300 mm～310 mm或300 mm～305 mm。支持片形成用膜D的俯視下的形狀不限於圖3的（a）所示的圓形，亦可為矩形（正方形或長方形）。[(B) Step] As shown in FIG. 5( a ), the dicing ring DR is attached to the laminated film 20. That is, the dicing ring DR is attached to the peripheral region 2a of the adhesive layer 2, and the supporting sheet forming film D is arranged inside the dicing ring DR. The film D for supporting sheet formation is singulated by dicing (refer to FIG. 5(b)). Thereby, a plurality of support sheets Da can be obtained from the film D for forming a support sheet. After that, as shown in FIG. 5( c ), the inner region 1 a of the dicing ring DR in the base film 1 is pushed up with the ring R to apply tension to the base film 1. Thereby, the interval between adjacent support pieces Da can be enlarged. Furthermore, it is preferable to form the cut for singulation to the outer edge of the film D for supporting sheet formation. The diameter of the film D for supporting sheet formation may be 300 mm to 310 mm or 300 mm to 305 mm, for example. The shape of the film D for supporting sheet formation in plan view is not limited to the circular shape shown in FIG. 3(a), and may be rectangular (square or rectangular).

作為基材膜1而使用具有熱收縮性的膜的情況下，亦可在（B）步驟後，藉由對基材膜1中的切割環DR的內側區域1a加熱而使內側區域1a收縮。圖6的（a）是示意性地表示藉由加熱器H的吹風來加熱內側區域1a的狀態的剖面圖。使內側區域1a呈環狀收縮而對基材膜1賦予張力，藉此能夠維持鄰接的支持片Da的間隔變寬的狀態。藉此，能夠更進一步抑制拾取錯誤的發生，並且能夠提高拾取步驟中的支持片Da的視認性。When using a heat-shrinkable film as the base film 1, after the step (B), the inner area 1 a of the dicing ring DR in the base film 1 may be heated to shrink the inner area 1 a. FIG. 6( a) is a cross-sectional view schematically showing a state in which the inner region 1 a is heated by the blowing of the heater H. FIG. By shrinking the inner region 1a in a ring shape and applying tension to the base film 1, it is possible to maintain a state in which the interval between adjacent support sheets Da is widened. Thereby, the occurrence of pickup errors can be further suppressed, and the visibility of the supporting sheet Da in the pickup step can be improved.

[（C）步驟] 如圖6的（b）所示，用具備多個針N的上推裝置將支持片Da上推。作為上推裝置，例如，可使用法斯福德科技（FASFORD TECHNOLOGY）公司製造的DB-830普拉斯（plus）+（商品名）。藉由用多個針N將支持片Da自基材膜1側上推，能夠對黏著層2與支持片Da的界面局部地施加按壓力（參照圖7）。藉此，兩者的界面剝離有效率地進行，可實現優異的拾取性。再者，自抑制因上推而產生的痕跡殘留在支持片Da的觀點出發，針N的前端可帶有弧度，亦可以是平坦的。[(C) Step] As shown in (b) of FIG. 6, the support sheet Da is pushed up by a push-up device provided with a plurality of needles N. As shown in FIG. As the push-up device, for example, DB-830 plus (trade name) manufactured by FASFORD TECHNOLOGY can be used. By pushing the support sheet Da up from the base film 1 side with a plurality of needles N, a pressing force can be locally applied to the interface between the adhesive layer 2 and the support sheet Da (see FIG. 7). Thereby, the interface peeling between the two proceeds efficiently, and excellent pick-up properties can be realized. Furthermore, from the viewpoint of suppressing the traces generated by the push-up from remaining on the support sheet Da, the tip of the needle N may be curved or flat.

用吸附夾頭C抽引並拾取經上推的狀態的支持片Da。作為吸附夾頭C，例如可使用微機械（MICRO-MECHANICS）公司製造的橡膠吸頭（RUBBER TIP）RHAH-CA010005001（商品名）。再者，亦可藉由對切割前的支持片形成用膜D或上推前的支持片Da進行加熱，使熱硬化性樹脂的硬化反應進行。當拾取時，藉由使支持片Da適度的硬化，能夠實現更優異的拾取性。The suction chuck C draws and picks up the supporting sheet Da in the pushed up state. As the suction chuck C, for example, a rubber tip (RUBBER TIP) RHAH-CA010005001 (trade name) manufactured by MICRO-MECHANICS can be used. Furthermore, by heating the support sheet forming film D before dicing or the support sheet Da before pushing up, the curing reaction of the thermosetting resin may proceed. When picking up, by moderately hardening the support sheet Da, it is possible to achieve more excellent pick-up properties.

（半導體裝置的製造方法） 對半導體裝置100的製造方法進行說明。本實施方式的製造方法包括以下的步驟。 （D）在基板10上配置第一晶片T1的步驟； （E）在基板10上且為第一晶片T1的周圍配置多個支持片Da的步驟（參照圖8）； （F）準備帶接著劑片的晶片T2a的步驟，所述帶接著劑片的晶片T2a具備第二晶片T2、及設置在第二晶片T2的一個面上的接著劑片Ta（參照圖9）； （G）藉由在多個支持片Dc的表面上配置帶接著劑片的晶片T2a來構築支石墓結構的步驟（參照圖10）； （H）用密封材50密封晶片T1與晶片T2的間隙等的步驟（參照圖1）。(Method of manufacturing semiconductor device) The method of manufacturing the semiconductor device 100 will be described. The manufacturing method of this embodiment includes the following steps. (D) The step of arranging the first wafer T1 on the substrate 10; (E) A step of arranging a plurality of support pieces Da on the substrate 10 and around the first wafer T1 (refer to FIG. 8); (F) A step of preparing a wafer T2a with an adhesive sheet. The wafer T2a with an adhesive sheet includes a second wafer T2 and an adhesive sheet Ta provided on one surface of the second wafer T2 (see FIG. 9) ； (G) A step of constructing a dolmen structure by arranging wafers T2a with adhesive sheets on the surfaces of a plurality of supporting sheets Dc (refer to FIG. 10); (H) A step of sealing the gap between the wafer T1 and the wafer T2 with the sealing material 50 (refer to FIG. 1).

[（D）步驟] （D）步驟是在基板10上配置第一晶片T1的步驟。例如，首先，經由接著劑層T1c將晶片T1配置在基板10上的規定位置。然後，晶片T1藉由導線w與基板10電連接。（D）步驟可為在（E）步驟之前進行的步驟，亦可在（A）步驟之前、（A）步驟與（B）步驟之間、（B）步驟與（C）步驟之間、或（C）步驟與（E）步驟之間。[(D) Step] The step (D) is a step of arranging the first wafer T1 on the substrate 10. For example, first, the wafer T1 is arranged at a predetermined position on the substrate 10 via the adhesive layer T1c. Then, the chip T1 is electrically connected to the substrate 10 through the wire w. Step (D) can be performed before step (E), or before step (A), between step (A) and step (B), between step (B) and step (C), or Between (C) step and (E) step.

[（E）步驟] （E）步驟是在基板10上且為第一晶片T1的周圍配置多個支持片Da的步驟。經過所述步驟製作圖8所示的結構體30。結構體30包括基板10、配置在基板10的表面上的晶片T1、及多個支持片Da。支持片Da的配置藉由壓接處理進行即可。壓接處理例如較佳為在80℃～180℃、0.01 MPa～0.50 Mpa的條件下實施0.5秒～3.0秒。再者，支持片Da可在（E）步驟的時刻完全硬化而成為支持片Dc，亦可不在該時刻完全硬化。支持片Da較佳為在（G）步驟開始前的時刻完全硬化而成為支持片Dc。[(E) Step] The step (E) is a step of arranging a plurality of support pieces Da on the substrate 10 and around the first wafer T1. After the above steps, the structure 30 shown in FIG. 8 is produced. The structure 30 includes a substrate 10, a wafer T1 arranged on the surface of the substrate 10, and a plurality of support pieces Da. The disposition of the support piece Da can be performed by crimping processing. The pressure bonding treatment is preferably carried out under conditions of 80°C to 180°C and 0.01 MPa to 0.50 Mpa for 0.5 seconds to 3.0 seconds, for example. In addition, the support sheet Da may be completely cured at the time of step (E) to become the support sheet Dc, or it may not be completely cured at this time. It is preferable that the support sheet Da is completely cured before the start of the step (G) to become the support sheet Dc.

[（F）步驟] （F）步驟是準備圖9所示的帶接著劑片的晶片T2a的步驟。帶接著劑片的晶片T2a包括晶片T2、及設置在晶片T2的一個表面的接著劑片Ta。帶接著劑片的晶片T2a例如能夠使用半導體晶圓及切割-黏晶一體型膜，經過切割步驟及拾取步驟而獲得。[(F) Step] The step (F) is a step of preparing the wafer T2a with the adhesive sheet shown in FIG. 9. The wafer T2a with an adhesive sheet includes a wafer T2 and an adhesive sheet Ta provided on one surface of the wafer T2. The wafer T2a with the adhesive sheet can be obtained, for example, by using a semiconductor wafer and a dicing-bonding integrated film through a dicing step and a pickup step.

[（G）步驟] （G）步驟是以接著劑片Ta與多個支持片Dc的上表面接觸的方式，在晶片T1的上方配置帶接著劑片的晶片T2a的步驟。具體而言，經由接著劑片Ta將晶片T2壓接於支持片Dc的上表面。該壓接處理例如較佳為在80℃～180℃、0.01 MPa～0.50 MPa的條件下實施0.5秒～3.0秒。繼而，藉由加熱使接著劑片Ta硬化。該硬化處理例如較佳為在60℃～175℃、0.01 MPa～1.0 MPa的條件下實施5分鐘以上。藉此，接著劑片Ta硬化而成為接著劑片Tc。經過該步驟，在基板10上構築支石墓結構（參照圖10）。藉由使晶片T1與帶接著劑片的晶片T2a分離，能夠防止因導線w的上部與晶片T2接觸而引起的導線w的短路。另外，由於無需在與晶片T2接觸的接著劑片Ta中埋入導線，故具有能夠使接著劑片Ta變薄的優點。[(G) step] The step (G) is a step of arranging the wafer T2a with the adhesive sheet above the wafer T1 so that the adhesive sheet Ta is in contact with the upper surface of the plurality of support sheets Dc. Specifically, the wafer T2 is pressure-bonded to the upper surface of the support sheet Dc via the adhesive sheet Ta. The pressure bonding treatment is preferably carried out under conditions of 80°C to 180°C and 0.01 MPa to 0.50 MPa for 0.5 seconds to 3.0 seconds, for example. Then, the adhesive sheet Ta is hardened by heating. This hardening treatment is preferably carried out for 5 minutes or more under the conditions of 60°C to 175°C and 0.01 MPa to 1.0 MPa, for example. Thereby, the adhesive sheet Ta hardens and becomes an adhesive sheet Tc. After this step, a dolmen structure is constructed on the substrate 10 (refer to FIG. 10). By separating the chip T1 from the chip T2a with the adhesive sheet, it is possible to prevent the short circuit of the wire w caused by the contact between the upper portion of the wire w and the chip T2. In addition, since there is no need to embed wires in the adhesive sheet Ta in contact with the wafer T2, there is an advantage that the adhesive sheet Ta can be made thinner.

在（G）步驟後、（H）步驟前，經由接著劑片在晶片T2上配置晶片T3，進而，經由接著劑片在晶片T3上配置晶片T4。接著劑片只要是與上述接著劑片Ta同樣的熱硬化性樹脂組成物即可，藉由加熱硬化而成為接著劑片Tc（參照圖1）。另一方面，藉由導線w分別將晶片T2、晶片T3、晶片T4與基板10電連接。再者，積層在晶片T1上方的晶片的數量不限於本實施方式中的三個，適當設定即可。After the step (G) and before the step (H), the wafer T3 is placed on the wafer T2 via the adhesive sheet, and further, the wafer T4 is placed on the wafer T3 via the adhesive sheet. The adhesive sheet may be the same thermosetting resin composition as the above-mentioned adhesive sheet Ta, and is cured by heating to become the adhesive sheet Tc (see FIG. 1). On the other hand, the chip T2, the chip T3, and the chip T4 are electrically connected to the substrate 10 by wires w, respectively. In addition, the number of wafers stacked on the wafer T1 is not limited to three in this embodiment, and may be appropriately set.

[（H）步驟] （H）步驟是用密封材50將晶片T1與晶片T2之間的間隙等密封的步驟。經過該步驟，完成圖1所示的半導體裝置100。[(H) step] The step (H) is a step of sealing the gap or the like between the wafer T1 and the wafer T2 with the sealing material 50. After this step, the semiconductor device 100 shown in FIG. 1 is completed.

（構成支持片形成用膜的熱硬化性樹脂組成物） 如上所述，構成支持片形成用膜D的熱硬化性樹脂組成物含有環氧樹脂、硬化劑及彈性體，根據需要更含有無機填料及硬化促進劑等。根據本發明者等人的研究，較佳為支持片Da及硬化後的支持片Dc具有以下特性。 ·特性1：在基板10的規定位置熱壓接支持片Da時不易產生位置偏移（120℃下的支持片Da的熔融黏度例如為4300 Pa·s～50000 Pa·s或5000 Pa·s～40000 Pa·s）； ·特性2：在半導體裝置100內支持片Dc發揮應力緩和性（熱硬化性樹脂組成物含有彈性體（橡膠成分））； ·特性3：與帶接著劑片的晶片的接著劑片Tc的接著強度充分高（支持片Dc相對於接著劑片Tc的晶粒剪切（dieshear）強度例如為2.0 Mpa～7.0 Mpa或3.0 Mpa～6.0 Mpa）； ·特性4：伴隨硬化的收縮率充分小； ·特性5：在拾取步驟中基於照相機的支持片Da的視認性良好（熱硬化性樹脂組成物例如含有著色劑）； ·特性6：支持片Dc具有充分的機械強度。(The thermosetting resin composition constituting the film for forming the support sheet) As described above, the thermosetting resin composition constituting the film D for forming a support sheet contains an epoxy resin, a curing agent, and an elastomer, and further contains an inorganic filler, a curing accelerator, and the like as necessary. According to research conducted by the inventors of the present invention, it is preferable that the support sheet Da and the hardened support sheet Dc have the following characteristics. ·Characteristic 1: Position shift is not likely to occur when the support sheet Da is thermally compressed at a predetermined position on the substrate 10 (the melt viscosity of the support sheet Da at 120°C is, for example, 4300 Pa·s to 50000 Pa·s or 5000 Pa·s to 40000 Pa·s); ·Characteristic 2: In the semiconductor device 100, the support sheet Dc exerts stress relaxation properties (the thermosetting resin composition contains an elastomer (rubber component)); ·Characteristic 3: Adhesion strength of the adhesive sheet Tc to the wafer with adhesive sheet is sufficiently high (The dieshear strength of the support sheet Dc relative to the adhesive sheet Tc is, for example, 2.0 Mpa to 7.0 Mpa or 3.0 Mpa ～6.0 Mpa); ·Characteristic 4: The shrinkage rate accompanying hardening is sufficiently small; · Feature 5: The visibility of the support sheet Da by the camera in the pickup step is good (the thermosetting resin composition contains a colorant, for example); · Feature 6: The supporting sheet Dc has sufficient mechanical strength.

[環氧樹脂] 環氧樹脂若為進行硬化而具有接著作用者，則並無特別限定。可使用：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂等二官能環氧樹脂；苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂等。另外，可應用多官能環氧樹脂、縮水甘油胺型環氧樹脂、含雜環的環氧樹脂或脂環式環氧樹脂等普遍已知的樹脂。該些可單獨使用一種，亦可併用兩種以上。[Epoxy resin] The epoxy resin is not particularly limited as long as it has a function for curing. Can be used: Bifunctional epoxy resins such as bisphenol A epoxy resin, bisphenol F epoxy resin, and bisphenol S epoxy resin; phenol novolac epoxy resin, cresol novolac epoxy resin, etc. Novolac type epoxy resin, etc. In addition, commonly known resins such as polyfunctional epoxy resins, glycidylamine epoxy resins, heterocyclic epoxy resins, or alicyclic epoxy resins can be used. These may be used individually by 1 type, and may use 2 or more types together.

[硬化劑] 作為硬化劑，例如可列舉酚樹脂、酯化合物、芳香族胺、脂肪族胺及酸酐。其中，自實現高的晶粒剪切強度的觀點而言，較佳為酚樹脂。作為酚樹脂的市售品，例如可列舉：迪愛生（DIC）（股）製造的LF-4871（商品名，BPA酚醛清漆型酚樹脂）、愛沃特（AIR WATER）（股）製造的HE-100C-30（商品名，苯基芳烷基型酚樹脂）、迪愛生（DIC）（股）製造的菲諾萊特（Phenolite）KA及TD系列、三井化學股份有限公司製造的美萊克（Milex）XLC-系列及XL系列（例如美萊克（Milex）XLC-LL）、愛沃特（AIR WATER）（股）製造的HE系列（例如HE100C-30）、明和化成股份有限公司製造的MEHC-7800系列（例如MEHC-7800-4S）、JEF化學（JFE Chemical）股份有限公司製造的JDPP系列。該些可單獨使用一種，亦可併用兩種以上。[hardener] Examples of hardeners include phenol resins, ester compounds, aromatic amines, aliphatic amines, and acid anhydrides. Among them, from the viewpoint of achieving high grain shear strength, a phenol resin is preferred. Commercial products of phenol resins include, for example, LF-4871 (trade name, BPA novolac type phenol resin) manufactured by DIC (Stock) and HE manufactured by AIR WATER (Stock) -100C-30 (trade name, phenyl aralkyl phenol resin), Phenolite KA and TD series manufactured by DIC, and Milex manufactured by Mitsui Chemicals Co., Ltd. ) XLC-series and XL series (such as Milex XLC-LL), HE series (such as HE100C-30) manufactured by AIR WATER (stock), MEHC-7800 manufactured by Minghe Chemical Co., Ltd. Series (such as MEHC-7800-4S), JDPP series manufactured by JFE Chemical Co., Ltd. These may be used individually by 1 type, and may use 2 or more types together.

關於環氧樹脂與酚樹脂的調配量，自實現高的晶粒剪切強度的觀點而言，環氧當量與羥基當量的當量比分別較佳為0.6～1.5，更佳為0.7～1.4，進而佳為0.8～1.3。藉由使調配比在上述範圍內，容易將硬化性及流動性雙方達到充分高的水準。Regarding the blending amount of epoxy resin and phenol resin, from the viewpoint of achieving high grain shear strength, the equivalent ratio of epoxy equivalent to hydroxyl equivalent is preferably 0.6 to 1.5, more preferably 0.7 to 1.4, and further Preferably, it is 0.8 to 1.3. By setting the blending ratio within the above range, it is easy to achieve a sufficiently high level of both curability and fluidity.

[彈性體] 作為彈性體，例如可列舉：丙烯酸樹脂、聚酯樹脂、聚醯胺樹脂、聚醯亞胺樹脂、矽酮樹脂、聚丁二烯、丙烯腈、環氧改質聚丁二烯、順丁烯二酸酐改質聚丁二烯、酚改質聚丁二烯及羧基改質丙烯腈。[Elastomer] Examples of elastomers include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, and maleic resins. Diacid anhydride modified polybutadiene, phenol modified polybutadiene and carboxyl modified acrylonitrile.

自實現高的晶粒剪切強度的觀點而言，作為彈性體較佳為丙烯酸系樹脂，進而，更佳為將丙烯酸縮水甘油酯或甲基丙烯酸縮水甘油酯等具有環氧基或縮水甘油基作為交聯性官能基的官能性單體聚合而得到的含環氧基的(甲基)丙烯酸共聚物等丙烯酸系樹脂。在丙烯酸系樹脂中，較佳為含環氧基的(甲基)丙烯酸酯共聚物以及含環氧基的丙烯酸橡膠，更佳為含環氧基的丙烯酸橡膠。含環氧基的丙烯酸橡膠是以丙烯酸酯為主要成分，主要由丙烯酸丁酯與丙烯腈等共聚物、丙烯酸乙酯與丙烯腈等共聚物構成的具有環氧基的橡膠。再者，丙烯酸系樹脂不僅可具有環氧基，亦可具有醇性或酚性羥基、羧基等交聯性官能基。From the viewpoint of achieving high grain shear strength, the elastomer is preferably an acrylic resin, and more preferably, glycidyl acrylate, glycidyl methacrylate, etc. have epoxy groups or glycidyl groups. Acrylic resins such as epoxy group-containing (meth)acrylic copolymers obtained by polymerizing functional monomers that are crosslinkable functional groups. Among acrylic resins, epoxy group-containing (meth)acrylate copolymers and epoxy group-containing acrylic rubbers are preferable, and epoxy group-containing acrylic rubbers are more preferable. Epoxy group-containing acrylic rubber is a rubber with epoxy group mainly composed of copolymers of butyl acrylate and acrylonitrile, and copolymers of ethyl acrylate and acrylonitrile. In addition, the acrylic resin may not only have an epoxy group, but may also have a crosslinkable functional group such as an alcoholic or phenolic hydroxyl group and a carboxyl group.

作為丙烯酸樹脂的市售品，可列舉：長瀨化成（Nagase ChemteX）（股）製造的SG-70L、SG-708-6、WS-023 EK30、SG-280 EK23、SG-P3溶劑變更品（商品名，丙烯酸橡膠，重量平均分子量：80萬，Tg：12℃，溶劑為環己酮）等。Commercially available acrylic resins include: SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 solvent-modified products manufactured by Nagase ChemteX (stock) ( Trade name, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent is cyclohexanone) etc.

自實現高的晶粒剪切強度的觀點而言，丙烯酸樹脂的玻璃轉移溫度（Tg）較佳為-50℃～50℃，更佳為-30℃～30℃。自實現高的晶粒剪切強度的觀點而言，丙烯酸樹脂的重量平均分子量（Mw）較佳為10萬～300萬，更佳為50萬～200萬。此處，Mw是指藉由凝膠滲透層析法（Gel Permeation Chromatography，GPC）測定，使用基於標準聚苯乙烯的標準曲線進行換算而得到的值。再者，藉由使用分子量分佈窄的丙烯酸樹脂，具有能夠形成高彈性的接著劑片的傾向。From the viewpoint of achieving high grain shear strength, the glass transition temperature (Tg) of the acrylic resin is preferably -50°C to 50°C, more preferably -30°C to 30°C. From the viewpoint of achieving high grain shear strength, the weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3 million, more preferably 500,000 to 2 million. Here, Mw refers to a value measured by Gel Permeation Chromatography (GPC) and converted using a standard curve based on standard polystyrene. Furthermore, by using an acrylic resin with a narrow molecular weight distribution, there is a tendency that a highly elastic adhesive sheet can be formed.

自實現高的晶粒剪切強度的觀點而言，相對於環氧樹脂及環氧樹脂硬化劑的合計100質量份，熱硬化性樹脂組成物中所含的丙烯酸樹脂的量較佳為10質量份～200質量份，更佳為20質量份～100質量份。From the viewpoint of achieving high grain shear strength, the amount of acrylic resin contained in the thermosetting resin composition is preferably 10 parts by mass relative to the total of 100 parts by mass of epoxy resin and epoxy resin curing agent. Parts to 200 parts by mass, more preferably 20 parts by mass to 100 parts by mass.

[無機填料] 作為無機填料，例如可列舉：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶須、氮化硼及結晶性二氧化矽、非晶性二氧化矽。該些可單獨使用一種，亦可併用兩種以上。[Inorganic Filler] Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, and nitride Boron and crystalline silicon dioxide, amorphous silicon dioxide. These may be used individually by 1 type, and may use 2 or more types together.

就實現高的晶粒剪切強度的觀點而言，無機填料的平均粒徑較佳為0.005 μm～1.0 μm，更佳為0.05 μm～0.5 μm。就實現高的晶粒剪切強度的觀點而言，無機填料的表面較佳為經化學修飾。（已補充）適合作為對表面進行化學修飾的材料者可列舉矽烷偶合劑。作為矽烷偶合劑的官能基的種類，例如可列舉乙烯基、丙烯醯基、環氧基、巰基、胺基、二胺基、烷氧基、乙氧基。From the viewpoint of achieving high grain shear strength, the average particle size of the inorganic filler is preferably 0.005 μm to 1.0 μm, more preferably 0.05 μm to 0.5 μm. From the viewpoint of achieving high grain shear strength, the surface of the inorganic filler is preferably chemically modified. (Added) Silane coupling agent is suitable as a material for chemical modification of the surface. As the type of the functional group of the silane coupling agent, for example, a vinyl group, an acrylic group, an epoxy group, a mercapto group, an amino group, a diamine group, an alkoxy group, and an ethoxy group can be mentioned.

就實現高的晶粒剪切強度的觀點而言，相對於熱硬化性樹脂組成物的樹脂成分100質量份，無機填料的含量較佳為20質量份～200質量份，更佳為30質量份～100質量份。From the viewpoint of achieving high grain shear strength, the content of the inorganic filler is preferably 20 parts by mass to 200 parts by mass, more preferably 30 parts by mass relative to 100 parts by mass of the resin component of the thermosetting resin composition ~100 parts by mass.

[硬化促進劑] 作為硬化促進劑，例如可列舉：咪唑類及其衍生物、有機磷系化合物、二級胺類、三級胺類、及四級銨鹽。就實現高的晶粒剪切強度的觀點而言，較佳為咪唑系的化合物。作為咪唑類，可列舉2-甲基咪唑、1-苄基-2-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑等。該些可單獨使用一種，亦可併用兩種以上。[Hardening accelerator] Examples of hardening accelerators include imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of achieving high grain shear strength, an imidazole-based compound is preferred. Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like. These may be used individually by 1 type, and may use 2 or more types together.

就實現高的晶粒剪切強度的觀點而言，相對於環氧樹脂及環氧樹脂硬化劑的合計100質量份，熱硬化性樹脂組成物的硬化促進劑的含量較佳為0.04質量份～3質量份，更佳為0.04質量份～0.2質量份。From the viewpoint of achieving high grain shear strength, the content of the curing accelerator of the thermosetting resin composition is preferably 0.04 parts by mass to 100 parts by mass in total of the epoxy resin and the epoxy resin curing agent. 3 parts by mass, more preferably 0.04 parts by mass to 0.2 parts by mass.

＜第二實施方式＞ 對支持片Da的製造方法的第二實施方式進行說明。在第一實施方式中，例示了在（C）步驟中使用多個針的形態，但亦可代替多個針而使用具有平坦的前端面的構件。以下，主要對與第一實施方式的不同點進行說明。<Second Embodiment> The second embodiment of the method of manufacturing the support sheet Da will be described. In the first embodiment, a form in which a plurality of needles are used in the step (C) is exemplified, but a member having a flat front end surface may be used instead of the plurality of needles. Hereinafter, the difference from the first embodiment will be mainly described.

本實施方式中的黏著層2為由紫外線硬化型黏著劑構成。即，黏著層2具有藉由照射紫外線而黏著性降低的性質。此時，如圖5的（b）所示，藉由切割支持片形成用膜D而得到多個支持片Da之後，對黏著層2照射紫外線。藉此，使黏著層2與支持片Da之間的黏著力降低。紫外線照射後，使用環R以及加熱器H對基材膜1賦予張力，藉此擴大鄰接的支持片Da的間隔（參照圖5的（c）及圖6的（a））。The adhesive layer 2 in this embodiment is composed of an ultraviolet curable adhesive. That is, the adhesive layer 2 has a property that the adhesiveness decreases by irradiating ultraviolet rays. At this time, as shown in FIG. 5( b ), after obtaining a plurality of support sheets Da by cutting the film D for support sheet formation, the adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force between the adhesive layer 2 and the support sheet Da is reduced. After the ultraviolet irradiation, tension is applied to the base film 1 using the ring R and the heater H, thereby increasing the interval between the adjacent support sheets Da (see FIG. 5(c) and FIG. 6(a)).

在本實施方式的（C）步驟中，如圖11所示，利用具備具有平坦前端面F的構件P的上推裝置來上推支持片Da。作為上推裝置，例如，可使用法斯福德科技（FASFORD TECHNOLOGY）公司製造的DB-830普拉斯（plus）+（商品名）。再者，可使用圖12的（a）～圖12的（c）所示的三段式上推裝置來上推支持片Da。三段式上推裝置包括第一筒狀構件P1、收容在第一筒狀構件P1中的第二筒狀構件P2、以及收容在第二筒狀構件P2中的構件P。該些的前端面F1、前端面F2、前端面F均平坦，且在第一筒狀構件P1的前端面F1抵接於基材膜1的狀態下成為同一平面（參照圖12的（a））。之後，第二筒狀構件P2自第一筒狀構件P1突出，藉此進一步將支持片Da上推（參照圖12的（b））。接著，構件P自第二筒狀構件P2突出，藉此進一步將支持片Da的中央部上推（參照圖12的（c））。如此以平坦的面將支持片Da自基材膜1側上推，而能夠有效率地使支持片Da的邊緣自黏著層2剝離，藉此能夠實現優異的拾取性。In the step (C) of the present embodiment, as shown in FIG. 11, the support piece Da is pushed up by a push-up device provided with a member P having a flat front end surface F. As the push-up device, for example, DB-830 plus (trade name) manufactured by FASFORD TECHNOLOGY can be used. Furthermore, the three-stage push-up device shown in FIG. 12(a) to FIG. 12(c) can be used to push up the support piece Da. The three-stage push-up device includes a first cylindrical member P1, a second cylindrical member P2 housed in the first cylindrical member P1, and a member P housed in the second cylindrical member P2. The front end surface F1, the front end surface F2, and the front end surface F are all flat, and become the same plane when the front end surface F1 of the first cylindrical member P1 is in contact with the base film 1 (see FIG. 12(a)) ). After that, the second cylindrical member P2 protrudes from the first cylindrical member P1, thereby further pushing up the support piece Da (refer to FIG. 12(b)). Next, the member P protrudes from the second cylindrical member P2, thereby further pushing up the center part of the support piece Da (refer to FIG. 12(c)). In this way, the support sheet Da is pushed up from the base film 1 side with a flat surface, and the edge of the support sheet Da can be peeled off from the adhesive layer 2 efficiently, thereby achieving excellent pick-up properties.

藉由三段式上推裝置的支持片Da的上推方法並不限於所述方法。例如，首先，在前端面F1、前端面F2、前端面F為同一平面的狀態下，經由基材膜1上推支持片Da。然後，可在使第一筒狀構件P1下降之後，使第二筒狀構件P2下降。根據該方法，能夠用比較低的推力來拾取支持片Da。再者，上推裝置的段數並不限於三段，只要至少兩段即可。即，多段式上推裝置只要具備筒狀構件、及收容於筒狀構件中的柱狀的構件P，且該些獨立地沿上下方向驅動即可。The push-up method of the support piece Da by the three-stage push-up device is not limited to the above-mentioned method. For example, first, in a state where the front end surface F1, the front end surface F2, and the front end surface F are in the same plane, the support sheet Da is pushed up through the base film 1. Then, after the first cylindrical member P1 is lowered, the second cylindrical member P2 may be lowered. According to this method, the support sheet Da can be picked up with a relatively low thrust. Furthermore, the number of stages of the push-up device is not limited to three stages, as long as there are at least two stages. That is, the multi-stage push-up device only needs to include a cylindrical member and a columnar member P housed in the cylindrical member, and these are independently driven in the vertical direction.

＜第三實施方式＞ 以下，對支持片Da的製造方法的第三實施方式進行說明。在所述實施方式中，例示了藉由完全切斷支持片形成用膜D而形成支持片Da的情況，但是，亦可在（B）步驟中，對支持片形成用膜D進行半切割後，針對基材膜1藉由冷卻擴展而形成支持片Da。以下，主要說明與所述實施方式的不同點。<The third embodiment> Hereinafter, a third embodiment of the method of manufacturing the support sheet Da will be described. In the above embodiment, the case where the support sheet Da is formed by completely cutting the support sheet forming film D is illustrated. However, in step (B), the support sheet forming film D may be half-cut. , The base film 1 is expanded by cooling to form a support sheet Da. Hereinafter, the difference from the above-mentioned embodiment will be mainly explained.

在將切割環DR貼附於積層膜20後（參照圖5的（a）），如圖13的（a）所示，將切口G形成至支持片形成用膜D的厚度方向的中途。藉此，能夠得到具有被半切割的支持片形成用膜D的積層膜25。切口G例如藉由刀片或雷射來形成即可。將支持片形成用膜D的厚度設為100時，切口G的深度為25～50即可，亦可為30～40。切口G形成為格子狀（參照圖13的（b））。再者，切口G的圖案不限於格子狀，只要是與支持片Da的形狀對應的形態即可。After the dicing ring DR is attached to the laminated film 20 (see FIG. 5(a)), as shown in FIG. 13(a), the cut G is formed to the middle of the thickness direction of the support sheet forming film D. Thereby, the laminated film 25 which has the film D for supporting sheet formation half-cut can be obtained. The notch G may be formed by, for example, a blade or a laser. When the thickness of the film D for forming a support sheet is 100, the depth of the notch G may be 25-50, and may be 30-40. The notches G are formed in a lattice shape (refer to FIG. 13(b)). In addition, the pattern of the notch G is not limited to the grid shape, as long as it is a form corresponding to the shape of the support sheet Da.

其後，例如藉由在-15℃～0℃的溫度條件下的冷卻擴展，將支持片形成用膜D單片化。藉此，可自支持片形成用膜D獲得多個支持片Da。藉由用環R將基材膜1中的切割環DR的內側區域1a上推，對基材膜1賦予張力即可（參照圖5的（c））。在（B）步驟中，將支持片形成用膜D半切割後，藉由冷卻擴展將支持片形成用膜D單片化，藉此支持片Da的邊緣不進入黏著層2，因此能夠實現優異的拾取性。Thereafter, for example, by cooling and spreading under a temperature condition of -15°C to 0°C, the film D for supporting sheet formation is singulated. Thereby, a plurality of supporting sheets Da can be obtained from the film D for forming a supporting sheet. By pushing up the inner region 1a of the dicing ring DR in the base film 1 with the ring R, tension may be applied to the base film 1 (see FIG. 5(c)). In step (B), after the support sheet forming film D is half-cut, the support sheet forming film D is singulated by cooling and spreading, so that the edge of the support sheet Da does not enter the adhesive layer 2, so that excellent performance can be achieved. The pick-up.

以上，詳細地說明了本揭示的實施方式，但本發明並不限定於所述實施方式。例如，在所述第一實施方式中，例示了具有感壓型的黏著層2的積層膜20，但黏著層2亦可為紫外線硬化型。在第三實施方式的黏著層2為紫外線硬化型的情況下，如上所述，支持片Da的邊緣不進入黏著層2，因此即使藉由紫外線照射使黏著層2硬化，亦能夠實現優異的拾取性。Above, the embodiments of the present disclosure have been described in detail, but the present invention is not limited to the embodiments. For example, in the first embodiment, the laminated film 20 having the pressure-sensitive adhesive layer 2 is exemplified, but the adhesive layer 2 may be an ultraviolet curing type. In the case where the adhesive layer 2 of the third embodiment is an ultraviolet curing type, as described above, the edge of the support sheet Da does not enter the adhesive layer 2, so even if the adhesive layer 2 is cured by ultraviolet irradiation, excellent pickup can be achieved Sex.

在所述第二實施方式中，例示了具有紫外線硬化型的黏著層2的積層膜20，但黏著層2亦可為感壓型。再者，感壓型的黏著層可含有具有光反應性的具有碳-碳雙鍵的樹脂，亦可不含有。例如，黏著層可藉由對其規定區域照射紫外線而降低該區域的黏著性，例如，亦可殘存具有光反應性的具有碳-碳雙鍵的樹脂。In the second embodiment, the laminated film 20 having the ultraviolet-curable adhesive layer 2 is exemplified, but the adhesive layer 2 may be a pressure-sensitive type. Furthermore, the pressure-sensitive adhesive layer may or may not contain a photoreactive resin having carbon-carbon double bonds. For example, the adhesive layer can be irradiated with ultraviolet rays to a predetermined area to reduce the adhesiveness of the area. For example, a photoreactive resin with carbon-carbon double bonds may remain.

在所述實施方式中，如圖3的（b）所示，例示了具備由熱硬化性樹脂層構成的支持片形成用膜D的支持片形成用積層膜20，但支持片形成用積層膜亦可由使熱硬化性樹脂層中的至少一部分硬化而成的層構成。另外，支持片形成用積層膜亦可具備包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的樹脂層或金屬層的多層膜。圖14的（a）所示的支持片形成用積層膜20A具有雙層膜D2（支持片形成用膜），該雙層膜D2具有熱硬化性樹脂層5、及較熱硬化性樹脂層具有更高剛性的樹脂層6。即，在支持片形成用積層膜20A中，在黏著層2與最外面的樹脂層6之間配置有熱硬化性樹脂層5。再者，熱硬化性樹脂層5為由構成第一實施方式的支持片形成用膜D的熱硬化性樹脂組成物構成。樹脂層6的厚度例如為5 μm～100 μm，亦可為10 μm～90 μm或20 μm～80 μm。樹脂層6例如為聚醯亞胺層。In the above embodiment, as shown in FIG. 3(b), the laminated film 20 for forming a support sheet is exemplified with the film D for forming a support sheet composed of a thermosetting resin layer, but the laminated film for forming a support sheet It may also be composed of a layer formed by curing at least a part of the thermosetting resin layer. In addition, the laminated film for forming a support sheet may include a multilayer film including a thermosetting resin layer and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer. The laminated film 20A for forming a support sheet shown in FIG. 14(a) has a double-layer film D2 (a film for forming a support sheet), and the double-layer film D2 has a thermosetting resin layer 5 and a relatively thermosetting resin layer having Higher rigidity resin layer 6. That is, in the laminated film 20A for forming a support sheet, the thermosetting resin layer 5 is arranged between the adhesive layer 2 and the outermost resin layer 6. In addition, the thermosetting resin layer 5 is composed of the thermosetting resin composition constituting the support sheet forming film D of the first embodiment. The thickness of the resin layer 6 is, for example, 5 μm to 100 μm, and may also be 10 μm to 90 μm or 20 μm to 80 μm. The resin layer 6 is, for example, a polyimide layer.

圖14的（b）所示的支持片形成用積層膜20B具有三層膜D3（支持片形成用膜），該三層膜D3包括：較熱硬化性樹脂層具有更高剛性的樹脂層6、及夾持樹脂層6的二層的熱硬化性樹脂層5a、熱硬化性樹脂層5b。在支持片形成用積層膜20B中，在黏著層2的表面上配置有三層膜D3。The laminated film 20B for forming a support sheet shown in FIG. 14(b) has a three-layer film D3 (film for forming a support sheet), and the three-layer film D3 includes a resin layer 6 having higher rigidity than a thermosetting resin layer. , And two thermosetting resin layers 5a and 5b sandwiching the resin layer 6. In the laminated film 20B for forming a support sheet, a three-layer film D3 is arranged on the surface of the adhesive layer 2.

雙層膜D2可與第一實施方式同樣，例如，藉由刀片或雷射而被完全切斷，亦可與第三實施方式同樣，在半切割之後藉由冷卻擴展經單片化。圖15的（a）是示意性地表示將雙層膜D2半切割的狀態的剖面圖。如圖15的（a）所示，切斷雙層膜D2的樹脂層6並且將切口G形成至熱硬化性樹脂層5的厚度方向的中途即可。藉此，能夠得到具有經半切割的雙層膜D2的積層膜25A。藉由樹脂層6被單片化而形成多個樹脂片6p。將熱硬化性樹脂層5的厚度設為100時，切口G以10～75（更佳為25～50）的厚度切斷熱硬化性樹脂層5即可。The double-layer film D2 may be the same as the first embodiment, for example, it may be completely cut by a blade or a laser, or it may be singulated by cooling and expanding after half-cutting, as in the third embodiment. FIG. 15(a) is a cross-sectional view schematically showing a state where the double-layer film D2 is half-cut. As shown in (a) of FIG. 15, the resin layer 6 of the double-layer film D2 may be cut and the cut G may be formed to the middle of the thickness direction of the thermosetting resin layer 5. Thereby, it is possible to obtain the laminated film 25A having the half-cut double-layer film D2. The resin layer 6 is singulated to form a plurality of resin sheets 6p. When the thickness of the thermosetting resin layer 5 is 100, the notch G may cut the thermosetting resin layer 5 with a thickness of 10 to 75 (more preferably 25 to 50).

三層膜D3可與第一實施方式及第二實施方式同樣，例如，藉由刀片或雷射而被完全切斷，亦可與第三實施方式同樣，在半切割之後藉由冷卻擴展經單片化。圖15的（b）是示意性地表示將三層膜D3半切割的狀態的剖面圖。如圖15的（b）所示，切斷三層膜D3的熱硬化性樹脂層5a及樹脂層6並且將切口G形成至熱硬化性樹脂層5b的厚度方向的中途即可。藉此，能夠得到具有被半切割的三層膜D3的積層膜25B。熱硬化性樹脂層5a被單片化，藉此形成多個接著劑片5p，樹脂層6被單片化，藉此形成多個樹脂片6p。將熱硬化性樹脂層5b的厚度設為100時，切口G以10～75（更佳為25～50）的厚度切斷熱硬化性樹脂層5b即可。The three-layer film D3 can be the same as the first embodiment and the second embodiment, for example, it can be completely cut by a blade or a laser. It can also be the same as that of the third embodiment, and it can be expanded by cooling after half-cutting. Flake. FIG. 15(b) is a cross-sectional view schematically showing a state where the three-layer film D3 is half-cut. As shown in (b) of FIG. 15, the thermosetting resin layer 5 a and the resin layer 6 of the three-layer film D3 may be cut, and the cut G may be formed to the middle of the thickness direction of the thermosetting resin layer 5 b. Thereby, it is possible to obtain the laminated film 25B having the half-cut three-layer film D3. The thermosetting resin layer 5a is singulated to form a plurality of adhesive sheets 5p, and the resin layer 6 is singulated to form a plurality of resin sheets 6p. When the thickness of the thermosetting resin layer 5b is 100, the notch G may cut the thermosetting resin layer 5b with a thickness of 10 to 75 (more preferably 25 to 50).

支持片形成用積層膜20A、支持片形成用積層膜20B包含較熱硬化性樹脂層5具有更高剛性的樹脂層6，藉此即使在藉由切割而被單片化之後不實施熱硬化性樹脂層5的熱硬化處理，亦能夠實現優異的拾取性。The laminated film 20A for forming a support sheet and the laminated film 20B for forming a support sheet include a resin layer 6 having higher rigidity than the thermosetting resin layer 5, thereby not implementing thermosetting properties even after being singulated by dicing. The thermosetting treatment of the resin layer 5 can also achieve excellent pick-up properties.

在支持片形成用積層膜20A、支持片形成用積層膜20B中，可採用較熱硬化性樹脂層高的金屬層（例如、銅層或鋁層）來代替樹脂層6。金屬層的厚度例如為5 μm～100 μm，亦可為10 μm～90 μm或20 μm～80 μm。藉由使支持片形成用積層膜20A、支持片形成用積層膜20B包含金屬層，除了優異的拾取性以外，藉由樹脂材料與金屬材料的光學對比度，還能夠在拾取步驟中實現支持片的優異的視認性。再者，在支持片形成用積層膜20A、支持片形成用積層膜20B具有金屬層的情況下，由於金屬的延展性，金屬片（金屬層被單片化而成者）的邊緣容易進入黏著層2。在黏著層2為感壓型的情況下，在單片化步驟與拾取步驟之間不實施藉由紫外線照射使黏著層2硬化的步驟，因此即使是金屬片的邊緣暫時進入黏著層2的狀態下，亦能夠實現優異的拾取性。 [實施例]In the laminated film 20A for forming a support sheet and the laminated film 20B for forming a support sheet, a metal layer (for example, a copper layer or an aluminum layer) having a higher thermosetting resin layer may be used instead of the resin layer 6. The thickness of the metal layer is, for example, 5 μm-100 μm, and may also be 10 μm-90 μm or 20 μm-80 μm. By making the support sheet formation laminated film 20A and the support sheet formation laminated film 20B include a metal layer, in addition to excellent pick-up properties, the optical contrast between the resin material and the metal material can also realize the support sheet in the pick-up step. Excellent visibility. Furthermore, when the laminated film 20A for forming a support sheet and the laminated film 20B for forming a support sheet have a metal layer, due to the ductility of the metal, the edges of the metal sheet (where the metal layer is singulated) easily enter the adhesion Layer 2. When the adhesive layer 2 is a pressure-sensitive type, the step of curing the adhesive layer 2 by ultraviolet irradiation is not performed between the singulation step and the pick-up step, so even the edge of the metal sheet temporarily enters the state of the adhesive layer 2 Bottom, can also achieve excellent pick-up properties. [Example]

以下，藉由實施例對本揭示進行說明，但本發明並不限定於該些實施例。Hereinafter, the present disclosure will be described with examples, but the present invention is not limited to these examples.

（清漆A的製備） 使用以下材料製備了支持片形成用膜的清漆A。 ·環氧樹脂1：YDCN-700-10：（商品名、新日鐵住金化學（股）製造，甲酚酚醛清漆型環氧樹脂，25℃下為固體）5.4質量份 ·環氧樹脂2：YDF-8170C：（商品名、新日鐵住金化學（股）製造，液態雙酚F型環氧樹脂，25℃下為液態）16.2質量份 ·酚樹脂（硬化劑）：LF-4871：（商品名、迪愛生（DIC）（股）製造，BPA酚醛清漆型酚樹脂）13.3質量份 ·無機填料：SC2050-HLG：（商品名、（股）雅都瑪（ADMATECHS）製造，二氧化矽填料分散液、平均粒徑0.50 μm）49.8質量份 ·彈性體：SG-P3溶劑變更品（商品名，長瀨化成（Nagase ChemteX）（股）製造，丙烯酸橡膠，重量平均分子量：80萬、Tg：12℃，溶劑為環己酮）14.9質量份 ·偶合劑1：A-189：（商品名，通用電氣（General Electric，GE）東芝（股）製造，γ-巰基丙基三甲氧基矽烷）0.1質量份 ·偶合劑2：A-1160：（商品名，通用電氣（General Electric，GE）東芝（股）製造，γ-脲基丙基三乙氧基矽烷）0.3質量份 ·硬化促進劑：固唑（Curezol）2PZ-CN：（商品名，四國化成工業（股）製造，1-氰基乙基-2-苯基咪唑）0.05質量份 ·溶媒：環己烷(Preparation of Varnish A) The varnish A of the film for supporting sheet formation was prepared using the following materials. ·Epoxy resin 1: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolac type epoxy resin, solid at 25°C) 5.4 parts by mass ·Epoxy resin 2: YDF-8170C: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., liquid bisphenol F epoxy resin, liquid at 25°C) 16.2 parts by mass ·Phenolic resin (hardener): LF-4871: (trade name, manufactured by DIC (Stock), BPA novolac type phenol resin) 13.3 parts by mass ·Inorganic filler: SC2050-HLG: (trade name, (stock) manufactured by ADMATECHS, silica filler dispersion, average particle size 0.50 μm) 49.8 parts by mass ·Elastomer: SG-P3 solvent-modified product (trade name, manufactured by Nagase ChemteX (stock), acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent is cyclohexanone) 14.9 parts by mass ·Coupling agent 1: A-189: (trade name, manufactured by General Electric (GE) Toshiba Co., Ltd., γ-mercaptopropyl trimethoxysilane) 0.1 parts by mass ·Coupling agent 2: A-1160: (trade name, manufactured by General Electric (GE) Toshiba Co., Ltd., γ-ureidopropyltriethoxysilane) 0.3 parts by mass · Hardening accelerator: Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Co., Ltd., 1-cyanoethyl-2-phenylimidazole) 0.05 parts by mass ·Solvent: Cyclohexane

（清漆B的製備） 使用以下材料製備了支持片形成用膜的清漆B。 ·環氧樹脂：YDCN-700-10：（商品名，新日鐵住金化學（股）製造，甲酚酚醛清漆型環氧樹脂，25℃下為固體）13.2質量份 ·酚樹脂（硬化劑）：HE-100C-30：（商品名、愛沃特（AIR WATER）（股）製造、苯基芳烷基型酚樹脂）11.0質量份 ·無機填料：艾羅西爾（Aerosil）R972：（商品名、日本艾羅西爾（Aerosil）（股）製造、二氧化矽、平均粒徑0.016 μm）7.8質量份 ·彈性體：SG-P3溶劑變更品（商品名、長瀨化成（Nagase ChemteX）（股）製造、丙烯酸橡膠、重量平均分子量：80萬、Tg：12℃、溶劑為環己酮）66.4質量份 ·偶合劑1：A-189：（商品名，通用電氣（General Electric，GE）東芝（股）製造，γ-巰基丙基三甲氧基矽烷）0.4質量份 ·偶合劑2：A-1160：（商品名、通用電氣（General Electric，GE）東芝（股）製造，γ-脲基丙基三乙氧基矽烷）1.15質量份 ·硬化促進劑：固唑（Curezol）2PZ-CN：（商品名、四國化成工業（股）製造，1-氰基乙基-2-苯基咪唑）0.03質量份 ·溶媒：環己烷(Preparation of Varnish B) The varnish B of the film for supporting sheet formation was prepared using the following materials. ·Epoxy resin: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolac type epoxy resin, solid at 25°C) 13.2 parts by mass ·Phenol resin (hardener): HE-100C-30: (trade name, manufactured by AIR WATER (stock), phenyl aralkyl type phenol resin) 11.0 parts by mass ·Inorganic filler: Aerosil R972: (trade name, manufactured by Aerosil (stock), silicon dioxide, average particle size 0.016 μm) 7.8 parts by mass ·Elastomer: SG-P3 solvent-modified product (trade name, manufactured by Nagase ChemteX (stock), acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent is cyclohexanone) 66.4 parts by mass ·Coupling agent 1: A-189: (trade name, manufactured by General Electric (GE) Toshiba Co., Ltd., γ-mercaptopropyl trimethoxysilane) 0.4 parts by mass ·Coupling agent 2: A-1160: (trade name, manufactured by General Electric (GE) Toshiba Co., Ltd., γ-ureidopropyltriethoxysilane) 1.15 parts by mass · Hardening accelerator: Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Co., Ltd., 1-cyanoethyl-2-phenylimidazole) 0.03 parts by mass ·Solvent: Cyclohexane

＜實施例1A＞ 如上所述，使用環己酮作為溶媒，將清漆A的固體成分比例調整為40質量%。用100目的過濾器過濾清漆A的同時進行真空脫泡。作為塗佈清漆A的膜，準備實施有脫模處理的聚對苯二甲酸乙二酯（PET）膜（厚度38 μm）。將真空脫泡後的清漆A塗佈於PET膜的實施了脫模處理的面上。對塗佈的清漆A以90℃5分鐘、繼而140℃5分鐘的兩階段進行加熱乾燥。如此，在PET膜的表面上製作了B階段狀態（半硬化狀態）的熱硬化性樹脂層A。<Example 1A> As described above, cyclohexanone was used as a solvent, and the solid content ratio of varnish A was adjusted to 40% by mass. Vacuum deaeration was performed while filtering Varnish A with a 100 mesh filter. As a film coated with varnish A, a polyethylene terephthalate (PET) film (thickness 38 μm) subjected to mold release treatment was prepared. The varnish A after the vacuum degassing was applied to the surface of the PET film that was subjected to the mold release treatment. The applied varnish A was heated and dried at 90°C for 5 minutes and then at 140°C for 5 minutes in two stages. In this way, the thermosetting resin layer A in the B-stage state (semi-cured state) was produced on the surface of the PET film.

按照以下順序製作了具有感壓型黏著層的積層膜。對於黏著劑而言，可藉由溶液聚合法獲得丙烯酸共聚物，所述丙烯酸共聚物使用丙烯酸2-乙基己酯及甲基丙烯酸甲酯作為主要單體，使用丙烯酸羥基乙酯及丙烯酸作為官能基單體。該合成的丙烯酸共聚物的重量平均分子量為40萬，玻璃轉移溫度為-38℃。製備相對於該丙烯酸共聚物100質量份而調配有10質量份多官能異氰酸酯交聯劑（三菱化學股份有限公司製造，商品名麥騰（Mytech） NY730-T）的黏著劑溶液，且在表面脫模處理聚對苯二甲酸乙二酯（厚度25 μm）上以乾燥時的黏著劑厚度為10 μm的方式進行塗佈乾燥。進而，在黏著劑面上層壓由聚丙烯/乙酸乙烯酯/聚丙烯構成的100 μm的聚烯烴基材。將該黏著膜在室溫下放置2周，充分進行老化，藉此獲得切割帶。A laminated film with a pressure-sensitive adhesive layer was produced in the following procedure. For adhesives, acrylic copolymers can be obtained by solution polymerization. The acrylic copolymers use 2-ethylhexyl acrylate and methyl methacrylate as main monomers, and use hydroxyethyl acrylate and acrylic acid as functional Base monomer. The weight average molecular weight of the synthesized acrylic copolymer is 400,000, and the glass transition temperature is -38°C. An adhesive solution containing 10 parts by mass of a multifunctional isocyanate crosslinking agent (manufactured by Mitsubishi Chemical Co., Ltd., trade name Mytech NY730-T) was prepared with respect to 100 parts by mass of the acrylic copolymer, and the adhesive solution was removed on the surface. The molded polyethylene terephthalate (thickness 25 μm) is coated and dried so that the adhesive thickness is 10 μm when dried. Furthermore, a 100 μm polyolefin substrate made of polypropylene/vinyl acetate/polypropylene was laminated on the adhesive surface. The adhesive film was left at room temperature for 2 weeks and fully aged, thereby obtaining a dicing tape.

將厚度為50 μm的熱硬化性樹脂層A在110℃下加熱1小時後，在130℃下加熱3小時使其硬化，得到硬化樹脂層A。在70℃加熱板上使用橡膠輥將硬化樹脂層A貼合在所述切割帶的黏著層上。經過該步驟得到支持片形成用膜與切割帶的積層體。The thermosetting resin layer A having a thickness of 50 μm was heated at 110° C. for 1 hour, and then heated at 130° C. for 3 hours to be cured. Thus, a cured resin layer A was obtained. The hardened resin layer A was attached to the adhesive layer of the dicing tape using a rubber roller on a 70°C hot plate. Through this step, a laminate of the film for forming a support sheet and the dicing tape is obtained.

＜實施例2A＞ 代替將熱硬化性樹脂層A在110℃下加熱1小時後，在130℃下加熱3小時，而是藉由在110℃下加熱2小時使熱硬化性樹脂層A硬化，除此之外與實施例1A同樣地得到支持片形成用膜與切割帶的積層體。<Example 2A> Instead of heating the thermosetting resin layer A at 110°C for 1 hour and then heating it at 130°C for 3 hours, the thermosetting resin layer A is cured by heating at 110°C for 2 hours. In Example 1A, a laminate of a film for forming a support sheet and a dicing tape was obtained in the same manner.

＜實施例3A＞ 使用清漆B代替清漆A而在PET膜的表面上形成熱硬化性樹脂層B，並且在70℃的加熱板上，用橡膠輥將熱硬化性樹脂層B貼合於切割帶的黏著層之後，用橡膠輥將聚醯亞胺膜（厚度25 μm）貼合於熱硬化性樹脂層B。經過該步驟得到支持片形成用膜與切割帶的積層體。<Example 3A> Using varnish B instead of varnish A to form a thermosetting resin layer B on the surface of the PET film, and bonding the thermosetting resin layer B to the adhesive layer of the dicing tape with a rubber roller on a heating plate at 70°C, The polyimide film (thickness 25 μm) was bonded to the thermosetting resin layer B with a rubber roller. Through this step, a laminate of the film for forming a support sheet and the dicing tape is obtained.

對實施例1A～實施例3A的支持片形成用膜進行拾取性的評價。即，在70℃的條件下在實施例1A～實施例3A的積層體的切割帶上層壓切割環。使用切割機在高度55 μm的條件下將支持片形成用膜單片化。藉此，得到了尺寸為10 mm×10 mm的支持片。之後，用黏晶機在擴展（擴展量：3 mm）的狀態下拾取支持片。作為上推夾具，使用了具有9根針的上推裝置（法斯福德科技（FASFORD TECHNOLOGY）公司製造的DB-830普拉斯（plus）+（商品名）），條件為上推速度10 mm/秒及上推高度350 μm。當針對各實施例、對6個支持片嘗試拾取時，在實施例1A～實施例3A的任何一個中都能夠拾取6個支持片全部。The film for forming a support sheet of Example 1A to Example 3A was evaluated for pick-up properties. That is, the dicing ring was laminated on the dicing tape of the laminate of Example 1A to Example 3A under the condition of 70°C. The film for forming the support sheet was singulated under the condition of a height of 55 μm using a dicing machine. With this, a support sheet with a size of 10 mm×10 mm was obtained. After that, use the die bonder to pick up the support sheet in the expanded state (expansion amount: 3 mm). As a push-up jig, a push-up device with 9 needles (DB-830 Plus + (trade name) manufactured by FASFORD TECHNOLOGY) is used, and the condition is that the push-up speed is 10 mm/sec and the push-up height is 350 μm. When trying to pick up 6 support sheets for each example, all 6 support sheets can be picked up in any one of Example 1A to Example 3A.

＜實施例1B＞ 除了代替感壓型黏著層，使用具有紫外線硬化型黏著層的切割帶以外，與實施例1A同樣地得到支持片形成用膜與切割帶的積層體。<Example 1B> Except that instead of the pressure-sensitive adhesive layer, a dicing tape having an ultraviolet curable adhesive layer was used, a laminate of the film for forming a support sheet and the dicing tape was obtained in the same manner as in Example 1A.

按照以下順序製作了具有紫外線硬化型黏著層的切割帶。以丙烯酸2-乙基己酯83質量份、丙烯酸2-羥基乙酯15質量份、甲基丙烯酸2質量份為原料，溶媒使用乙酸乙酯，藉由溶液自由基聚合得到共聚物。使12質量份2-甲基丙烯醯氧基乙基異氰酸酯與該丙烯酸共聚物反應，合成了具有碳-碳雙鍵的紫外線反應型丙烯酸共聚物。在所述反應中，作為聚合抑制劑使用0.05份氫醌-單甲醚。用GPC測定合成的丙烯酸共聚物的重量平均分子量，結果為30萬～70萬。將如此得到的丙烯酸共聚物、以固體成分換算計為2.0份的作為硬化劑的聚異氰酸酯化合物（日本聚胺基甲酸酯股份有限公司製造，商品名：科羅耐特（Coronate）L）、作為光聚合起始劑的1-羥基環己基苯基酮0.5份混合，製備紫外線硬化型黏著劑溶液。將該紫外線硬化型黏著劑溶液以乾燥後的厚度為10 μm的方式在聚對苯二甲酸乙二酯製的剝離膜（厚度：38 μm）上，進行塗佈及乾燥。然後，在黏著劑層上貼合單面實施了電暈放電處理的聚烯烴製膜（厚度：90 μm）。將得到的積層膜在40℃的恆溫槽中進行72小時老化，得到切割帶。The dicing tape with the UV-curable adhesive layer was produced in the following procedure. Using 83 parts by mass of 2-ethylhexyl acrylate, 15 parts by mass of 2-hydroxyethyl acrylate, and 2 parts by mass of methacrylic acid as raw materials, using ethyl acetate as a solvent, a copolymer was obtained by solution radical polymerization. 12 parts by mass of 2-methacryloxyethyl isocyanate was reacted with the acrylic copolymer to synthesize an ultraviolet reactive acrylic copolymer having a carbon-carbon double bond. In the reaction, 0.05 parts of hydroquinone-monomethyl ether was used as a polymerization inhibitor. The weight average molecular weight of the synthesized acrylic copolymer was measured by GPC, and the result was 300,000 to 700,000. The acrylic copolymer obtained in this way, and 2.0 parts of polyisocyanate compound as a curing agent (manufactured by Japan Polyurethane Co., Ltd., trade name: Corona L) in terms of solid content, 0.5 parts of 1-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator was mixed to prepare an ultraviolet curable adhesive solution. This ultraviolet curable adhesive solution was applied and dried on a peeling film (thickness: 38 μm) made of polyethylene terephthalate so that the thickness after drying was 10 μm. Then, a polyolefin film (thickness: 90 μm) that was subjected to corona discharge treatment on one side was bonded to the adhesive layer. The obtained laminated film was aged in a constant temperature bath at 40°C for 72 hours to obtain a dicing tape.

＜實施例2B＞ 除了代替感壓型黏著層，使用具有紫外線硬化型黏著層的切割帶以外，與實施例2A同樣地得到支持片形成用膜與切割帶的積層體。<Example 2B> Except that instead of the pressure-sensitive adhesive layer, a dicing tape having an ultraviolet curable adhesive layer was used, a laminate of the film for forming a support sheet and the dicing tape was obtained in the same manner as in Example 2A.

＜實施例3B＞ 除了代替感壓型黏著層，使用具有紫外線硬化型黏著層的切割帶以外，與實施例3A同樣地得到支持片形成用膜與切割帶的積層體。<Example 3B> Except that instead of the pressure-sensitive adhesive layer, a dicing tape having an ultraviolet curable adhesive layer was used, a laminate of the film for forming a support sheet and the dicing tape was obtained in the same manner as in Example 3A.

對實施例1B～實施例3B的支持片形成用膜進行拾取性的評價。即，在70℃的條件下在實施例1B～實施例3B的積層體的切割帶上層壓切割環。使用切割機在高度55 μm的條件下將支持片形成用膜單片化。藉此，得到了尺寸為10 mm×10 mm的支持片。用鹵素燈在80 mW/cm2 、200 mJ/cm2 的條件下自切割帶側向支持片的黏著層照射紫外線。之後，用黏晶機在擴展（擴展量：3 mm）的狀態下拾取支持片。作為上推夾具，使用圖12的（a）～圖12的（c）所示構成（三段式）的具有前端部的上推裝置（法斯福德科技（FASFORD TECHNOLOGY）公司製造的DB-830普拉斯（plus）+（商品名）），條件為上推速度10 mm/秒及上推高度1200 μm。當針對各實施例、對6個支持片嘗試拾取時，在實施例1B～實施例3B的任何一個中都能夠拾取6個支持片全部。 [產業上之可利用性]The film for forming a support sheet of Example 1B to Example 3B was evaluated for pick-up properties. That is, the dicing ring was laminated on the dicing tape of the laminate of Example 1B to Example 3B under the condition of 70°C. The film for forming the support sheet was singulated under the condition of a height of 55 μm using a dicing machine. With this, a support sheet with a size of 10 mm×10 mm was obtained. A halogen lamp was used to irradiate ultraviolet rays from the side of the cutting tape to the adhesive layer of the support sheet under the conditions of 80 mW/cm 2 and 200 mJ/cm 2. After that, use the die bonder to pick up the support sheet in the expanded state (expansion amount: 3 mm). As the push-up jig, a push-up device (DB- manufactured by FASFORD TECHNOLOGY) with a configuration (three-stage) shown in Fig. 12(a) to Fig. 12(c) with a front end was used 830 plus (plus) + (trade name)), the condition is that the pushing speed is 10 mm/sec and the pushing height is 1200 μm. When trying to pick up 6 support sheets for each example, all the 6 support sheets can be picked up in any one of Example 1B to Example 3B. [Industrial availability]

根據本揭示，提供一種支持片的製造方法，其能夠有效率地製造具有支石墓結構的半導體裝置的製造中所使用的支持片，可有助於半導體裝置的生產效率的提高。另外，根據本揭示，提供一種使用所述支持片來有效率地製造具有支石墓結構的半導體裝置的方法。According to the present disclosure, a method for manufacturing a support sheet is provided, which can efficiently manufacture a support sheet used in the manufacture of a semiconductor device having a dolmen structure, which can contribute to the improvement of the production efficiency of the semiconductor device. In addition, according to the present disclosure, a method for efficiently manufacturing a semiconductor device having a dolmen structure using the support sheet is provided.

1:基材膜 1a:內側區域 2:黏著層 2a:周緣區域 3:覆蓋層 5、5a、5b:熱硬化性樹脂層 5p:接著劑片 6:樹脂層 6p:樹脂片 10:基板 20、20A、20B:支持片形成用積層膜（積層膜） 25、25A、25B:積層膜 30:結構體 50:密封材 100:半導體裝置 C:吸附夾頭 D:支持片形成用膜 D2:雙層膜（支持片形成用膜） D3:三層膜（支持片形成用膜） Da:支持片 Dc:支持片（硬化物） DR:切割環 F、F1、F2:前端面 f1:第一面 f2:第二面 G:切口 H:加熱器 P:構件 P1:第一筒狀構件 P2:第二筒狀構件 N:針 R:環 T1:第一晶片（晶片） T2:第二晶片（晶片） T3、T4:晶片 T1c:接著劑片/接著劑層 T2a:帶接著劑片的晶片 Ta:接著劑片 Tc:接著劑片（硬化物） w:導線1: Base film 1a: medial area 2: Adhesive layer 2a: Peripheral area 3: cover layer 5, 5a, 5b: Thermosetting resin layer 5p: Adhesive tablets 6: Resin layer 6p: resin sheet 10: substrate 20, 20A, 20B: Laminated film for supporting sheet formation (Laminated film) 25, 25A, 25B: laminated film 30: structure 50: Sealing material 100: Semiconductor device C: Adsorption Chuck D: Film for supporting sheet formation D2: Double-layer film (film for supporting sheet formation) D3: Three-layer film (film for supporting sheet formation) Da: Support film Dc: Support sheet (hardened material) DR: Cutting ring F, F1, F2: Front face f1: first side f2: second side G: Incision H: heater P: component P1: The first cylindrical member P2: The second cylindrical member N: Needle R: ring T1: First chip (chip) T2: Second chip (chip) T3, T4: chip T1c: Adhesive sheet/adhesive layer T2a: Chip with adhesive sheet Ta: Adhesive tablets Tc: Adhesive sheet (hardened material) w: wire

圖1是示意性地表示本揭示的半導體裝置的一例的剖面圖。 圖2的（a）及圖2的（b）是示意性地表示第一晶片與多個支持片的位置關係的例子的平面圖。 圖3的（a）是示意性地表示支持片形成用積層膜的一例的平面圖，圖3的（b）是圖3的（a）的b-b線處的剖面圖。 圖4是示意性地表示貼合黏著層與支持片形成用膜的步驟的剖面圖。 圖5的（a）是示意性地表示將切割環貼附到黏著層的周緣區域的狀態的的剖面圖，圖5的（b）是示意性地表示支持片形成用膜經單片化的狀態的剖面圖，圖5的（c）是示意性地表示藉由擴展而使鄰接的支持片的間隔變寬的狀態的剖面圖。 圖6的（a）是示意性地表示藉由加熱器的吹風來加熱基材膜的內側區域的情況的剖面圖，圖6的（b）是示意性地表示在用多個針將支持片上推的狀態下拾取支持片的情況的剖面圖。 圖7是示意性地表示用多個針自基材膜側上推支持片的情況的剖面圖。 圖8是示意性地表示在基板上且為第一晶片的周圍配置多個支持片的狀態的剖面圖。 圖9是示意性地表示帶接著劑片的晶片的一例的剖面圖。 圖10是示意性地表示形成在基板上的支石墓結構的剖面圖。 圖11是示意性地表示在用具有平坦的前端面的構件將支持片上推的狀態下拾取支持片的情況的剖面圖。 圖12的（a）～圖12的（c）是示意性地表示藉由多段式的上推裝置上推支持片，從而支持片的邊緣自黏著層剝離的情況的剖面圖。 圖13的（a）是示意性地表示將支持片形成用膜半切割的狀態的剖面圖，圖13的（b）是示意性地表示經半切割的支持片形成用膜的一例的平面圖。 圖14的（a）及圖14的（b）是分別示意性地表示支持片形成用積層膜的其他實施方式的剖面圖。 圖15的（a）是示意性地表示將圖14的（a）所示的雙層膜半切割的狀態的剖面圖，圖15的（b）是示意性地表示將圖14的（b）所示的三層膜半切割的狀態的剖面圖。FIG. 1 is a cross-sectional view schematically showing an example of the semiconductor device of the present disclosure. 2(a) and 2(b) are plan views schematically showing an example of the positional relationship between the first wafer and the plurality of support pieces. Fig. 3(a) is a plan view schematically showing an example of a laminated film for forming a support sheet, and Fig. 3(b) is a cross-sectional view taken along the line b-b of Fig. 3(a). Fig. 4 is a cross-sectional view schematically showing a step of bonding an adhesive layer and a film for forming a support sheet. Fig. 5(a) is a cross-sectional view schematically showing a state in which the dicing ring is attached to the peripheral region of the adhesive layer, and Fig. 5(b) is a schematic diagram showing that the film for forming a support sheet is singulated A cross-sectional view of the state. FIG. 5(c) is a cross-sectional view schematically showing a state where the interval between adjacent support pieces is widened by the expansion. Fig. 6(a) is a cross-sectional view schematically showing that the inner region of the base film is heated by the blowing of a heater, and Fig. 6(b) is a schematic diagram showing that a plurality of needles are used on the support sheet A cross-sectional view of the case where the support sheet is picked up in the pushed state. Fig. 7 is a cross-sectional view schematically showing a state in which a support sheet is pushed up from the base film side with a plurality of needles. Fig. 8 is a cross-sectional view schematically showing a state in which a plurality of support sheets are arranged on the substrate and around the first wafer. Fig. 9 is a cross-sectional view schematically showing an example of a wafer with an adhesive sheet. Fig. 10 is a cross-sectional view schematically showing the structure of a dolmen formed on a substrate. Fig. 11 is a cross-sectional view schematically showing a state in which the support sheet is picked up in a state where the support sheet is pushed up by a member having a flat front end surface. Figs. 12(a) to 12(c) are cross-sectional views schematically showing that the support sheet is pushed up by a multi-stage push-up device, and the edge of the support sheet is peeled from the adhesive layer. Fig. 13(a) is a cross-sectional view schematically showing a state where the film for forming a support sheet is half-cut, and Fig. 13(b) is a plan view schematically showing an example of a half-cut film for forming a support sheet. 14(a) and 14(b) are cross-sectional views schematically showing other embodiments of the laminated film for forming a support sheet, respectively. FIG. 15(a) is a cross-sectional view schematically showing a state in which the double-layer film shown in FIG. 14(a) is half-cut, and FIG. 15(b) is a schematic diagram showing that FIG. 14(b) A cross-sectional view of the half-cut state of the three-layer film shown.

1:基材膜 1: Base film

2:黏著層 2: Adhesive layer

C:吸附夾頭 C: Adsorption Chuck

Da:支持片 Da: Support film

N:針 N: Needle

Claims (9)

一種支持片的製造方法，其為具有支石墓結構的半導體裝置的製造中所使用的支持片的製造方法，所述支石墓結構包括：基板；第一晶片，配置於所述基板上；多個支持片，配置於所述基板上且為所述第一晶片的周圍；以及第二晶片，由所述多個支持片支持且配置成覆蓋所述第一晶片，且所述支持片的製造方法包括以下步驟： （A）準備積層膜的步驟，所述積層膜依次具備：基材膜、黏著層、以及支持片形成用膜； （B）藉由將所述支持片形成用膜單片化，而在所述黏著層的表面上形成多個支持片的步驟；以及 （C）在藉由多個針自所述基材膜側上推所述支持片的狀態下拾取所述支持片的步驟， 所述支持片形成用膜為由熱硬化性樹脂層構成的膜、或為由使熱硬化性樹脂層中的至少一部分硬化而成的層構成的膜、或者包括熱硬化性樹脂層、以及較所述熱硬化性樹脂層具有更高剛性的樹脂層或金屬層的多層膜。A manufacturing method of a support sheet, which is a manufacturing method of a support sheet used in the manufacture of a semiconductor device with a dolmen structure, the dolmen structure comprising: a substrate; a first wafer arranged on the substrate; A plurality of supporting sheets arranged on the substrate and surrounding the first chip; and a second chip supported by the plurality of supporting sheets and arranged to cover the first chip, and the supporting sheet The manufacturing method includes the following steps: (A) The step of preparing a laminated film, the laminated film includes in this order: a base film, an adhesive layer, and a film for forming a support sheet; (B) A step of forming a plurality of supporting sheets on the surface of the adhesive layer by singulating the film for forming the supporting sheet; and (C) a step of picking up the support sheet in a state of pushing the support sheet from the base film side by a plurality of needles, The film for forming the support sheet is a film composed of a thermosetting resin layer, or a film composed of a layer formed by curing at least a part of a thermosetting resin layer, or a thermosetting resin layer, and The thermosetting resin layer has a multilayer film of a resin layer or a metal layer with higher rigidity. 一種支持片的製造方法，其為具有支石墓結構的半導體裝置的製造中所使用的支持片的製造方法，所述支石墓結構包括：基板；第一晶片，配置於所述基板上；多個支持片，配置於所述基板上且為所述第一晶片的周圍；以及第二晶片，由所述多個支持片支持且配置成覆蓋所述第一晶片，且所述支持片的製造方法包括以下步驟： （A）準備積層膜的步驟，所述積層膜依次具備：基材膜、黏著層、以及支持片形成用膜； （B）藉由將所述支持片形成用膜單片化，而在所述黏著層的表面上形成多個支持片的步驟；以及 （C）在藉由具有平坦的前端面的構件自所述基材膜側上推所述支持片的狀態下拾取所述支持片的步驟， 所述支持片形成用膜為由熱硬化性樹脂層構成的膜、或為由使熱硬化性樹脂層中的至少一部分硬化而成的層構成的膜、或者包括熱硬化性樹脂層、以及較所述熱硬化性樹脂層具有更高剛性的樹脂層或金屬層的多層膜。A manufacturing method of a support sheet, which is a manufacturing method of a support sheet used in the manufacture of a semiconductor device with a dolmen structure, the dolmen structure comprising: a substrate; a first wafer arranged on the substrate; A plurality of supporting sheets arranged on the substrate and surrounding the first chip; and a second chip supported by the plurality of supporting sheets and arranged to cover the first chip, and the supporting sheet The manufacturing method includes the following steps: (A) The step of preparing a laminated film, the laminated film includes in this order: a base film, an adhesive layer, and a film for forming a support sheet; (B) A step of forming a plurality of supporting sheets on the surface of the adhesive layer by singulating the film for forming the supporting sheet; and (C) A step of picking up the support sheet in a state where the support sheet is pushed up from the base film side by a member having a flat front end surface, The film for forming the support sheet is a film composed of a thermosetting resin layer, or a film composed of a layer formed by curing at least a part of the thermosetting resin layer, or includes a thermosetting resin layer, and The thermosetting resin layer has a multilayer film of a resin layer or a metal layer with higher rigidity. 如請求項1或請求項2所述的支持片的製造方法，其中所述樹脂層為聚醯亞胺層。The manufacturing method of the support sheet according to claim 1 or claim 2, wherein the resin layer is a polyimide layer. 如請求項1或請求項2所述的支持片的製造方法，其中所述金屬層為銅層或鋁層。The manufacturing method of the support sheet according to claim 1 or claim 2, wherein the metal layer is a copper layer or an aluminum layer. 如請求項1或請求項2所述的支持片的製造方法，其中所述支持片形成用膜為由熱硬化性樹脂層構成的膜、或為由使熱硬化性樹脂層中的至少一部分硬化而成的層構成的膜，且 （B）步驟依次包括：將切口形成至所述支持片形成用膜的厚度方向的中途的步驟；及藉由擴展而將經冷卻的狀態的所述支持片形成用膜單片化的步驟。The method for manufacturing a support sheet according to claim 1 or claim 2, wherein the film for forming the support sheet is a film composed of a thermosetting resin layer, or is composed of hardening at least a part of the thermosetting resin layer A film made up of layers, and The step (B) sequentially includes a step of forming a cut to the middle of the thickness direction of the support sheet forming film; and a step of singulating the cooled state of the support sheet forming film by expansion. 如請求項1至請求項4中任一項所述的支持片的製造方法，其中所述支持片形成用膜是包括熱硬化性樹脂層、以及較所述熱硬化性樹脂層具有更高剛性的樹脂層或金屬層的多層膜，且在所述積層膜中，所述熱硬化性樹脂層位於所述樹脂層與所述黏著層之間、或所述金屬層與所述黏著層之間， （B）步驟依次包括：切斷所述支持片形成用膜的所述樹脂層或所述金屬層並且將切口形成至所述熱硬化性樹脂層的厚度方向的中途的步驟；及藉由擴展而將經冷卻的狀態的所述支持片形成用膜單片化的步驟。The method for manufacturing a support sheet according to any one of claims 1 to 4, wherein the film for forming the support sheet includes a thermosetting resin layer and has higher rigidity than the thermosetting resin layer A multilayer film of a resin layer or a metal layer, and in the laminated film, the thermosetting resin layer is located between the resin layer and the adhesive layer, or between the metal layer and the adhesive layer , The step (B) sequentially includes a step of cutting the resin layer or the metal layer of the film for forming a support sheet and forming a cut to the middle of the thickness direction of the thermosetting resin layer; and by expanding A step of singulating the film for forming the support sheet in a cooled state. 如請求項1至請求項6中任一項所述的支持片的製造方法，其中所述黏著層為感壓型。The manufacturing method of the support sheet according to any one of claims 1 to 6, wherein the adhesive layer is a pressure sensitive type. 如請求項1至請求項6中任一項所述的支持片的製造方法，其中所述黏著層為紫外線硬化型。The manufacturing method of the support sheet according to any one of claims 1 to 6, wherein the adhesive layer is an ultraviolet curing type. 一種半導體裝置的製造方法，其為製造具有支石墓結構的半導體裝置的方法，所述支石墓結構包括：基板；第一晶片，配置於所述基板上；多個支持片，配置於所述基板上且為所述第一晶片的周圍；以及第二晶片，由所述多個支持片支持且配置成覆蓋所述第一晶片，其中所述半導體裝置的製造方法包括以下步驟： （D）在基板上配置第一晶片的步驟； （E）在所述基板上且為所述第一晶片的周圍或應配置所述第一晶片的區域的周圍，配置藉由如請求項1至請求項8中任一項所述的支持片的製造方法而製造的多個所述支持片的步驟； （F）準備帶接著劑片的晶片的步驟，所述帶接著劑片的晶片具備第二晶片、及設置在所述第二晶片的一個面上的接著劑片；以及 （G）藉由在多個所述支持片的表面上配置所述帶接著劑片的晶片來構築支石墓結構的步驟。A method of manufacturing a semiconductor device, which is a method of manufacturing a semiconductor device with a dolmen structure, the dolmen structure comprising: a substrate; a first wafer arranged on the substrate; a plurality of supporting pieces arranged on the substrate; On the substrate and surrounding the first wafer; and a second wafer supported by the plurality of support sheets and configured to cover the first wafer, wherein the manufacturing method of the semiconductor device includes the following steps: (D) The step of arranging the first wafer on the substrate; (E) On the substrate and around the first chip or around the area where the first chip should be arranged, the support sheet described in any one of claim 1 to claim 8 is arranged The steps of manufacturing a plurality of the supporting sheets according to the manufacturing method; (F) a step of preparing a wafer with an adhesive sheet, the wafer with an adhesive sheet including a second wafer and an adhesive sheet provided on one surface of the second wafer; and (G) A step of constructing a dolmen structure by arranging the wafers with adhesive sheets on the surfaces of a plurality of the supporting sheets.
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