TW202420557A - Method for manufacturing semiconductor device having dolmen structure - Google Patents
Method for manufacturing semiconductor device having dolmen structure Download PDFInfo
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- TW202420557A TW202420557A TW113100313A TW113100313A TW202420557A TW 202420557 A TW202420557 A TW 202420557A TW 113100313 A TW113100313 A TW 113100313A TW 113100313 A TW113100313 A TW 113100313A TW 202420557 A TW202420557 A TW 202420557A
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Images
Abstract
本揭示的一個方面是一種半導體裝置的支石墓結構的形成中所使用的支持片的製造方法，其包括：（A）準備積層膜的步驟，所述積層膜依次具備：基材膜、黏著層、以及由例如熱硬化性樹脂層構成的支持片形成用膜；（B）藉由將支持片形成用膜單片化，而在黏著層的表面上形成多個支持片的步驟；以及（C）在利用多個針或具有平坦的前端面的構件自基材膜側上推支持片的狀態下拾取支持片的步驟。One aspect of the present disclosure is a method for manufacturing a support sheet used in forming a dolmen structure of a semiconductor device, comprising: (A) preparing a laminated film, the laminated film sequentially comprising: a base film, an adhesive layer, and a support sheet forming film composed of, for example, a thermosetting resin layer; (B) forming a plurality of support sheets on the surface of the adhesive layer by singulating the support sheet forming film; and (C) picking up the support sheet while pushing up the support sheet from the base film side using a plurality of needles or a member having a flat front end surface.
Description
本揭示是有關於一種具有支石墓結構的半導體裝置的製造方法，所述支石墓結構包括：基板；第一晶片，配置在基板上；多個支持片，配置於基板上且為第一晶片周圍；以及第二晶片，由多個支持片支持並且配置成覆蓋第一晶片。另外，本揭示是有關於一種具有支石墓結構的半導體裝置的製造中所使用的支持片的製造方法。再者，支石墓（dolmen）是石墓的一種，具備多個支柱石及載置在其上的板狀的岩石。在具有支石墓結構的半導體裝置中，支持片相當於「支柱石」，第二晶片相當於「板狀的岩石」。The present disclosure relates to a method for manufacturing a semiconductor device having a dolmen structure, wherein the dolmen structure includes: a substrate; a first chip disposed on the substrate; a plurality of support sheets disposed on the substrate and surrounding the first chip; and a second chip supported by the plurality of support sheets and disposed to cover the first chip. In addition, the present disclosure relates to a method for manufacturing a support sheet used in the manufacture of a semiconductor device having a dolmen structure. Furthermore, a dolmen is a type of stone tomb having a plurality of supporting stones and plate-like rocks placed thereon. In a semiconductor device having a dolmen structure, the support sheet is equivalent to a "supporting stone" and the second chip is equivalent to a "plate-like rock".
近年來，在半導體裝置的領域，要求高積體、小型化以及高速化。作為半導體裝置的一形態，在配置於基板上的控制器晶片上積層半導體晶片的結構受到關注。例如專利文獻1揭示了一種半導體晶粒組件，該半導體晶粒組件包括控制器晶粒、以及在控制器晶粒上由支持構件支持的記憶體晶粒。專利文獻1的圖1A所示的半導體組件100可謂是具有支石墓結構。即，半導體組件100包括封裝基板102、配置在封裝基板102表面上的控制器晶粒103、配置在控制器晶粒103上方的記憶體晶粒106a、記憶體晶粒106b、以及支持記憶體晶粒106a的支持構件130a、支持構件130b。 [現有技術文獻] [專利文獻] In recent years, in the field of semiconductor devices, high integration, miniaturization and high speed are required. As a form of semiconductor devices, the structure of stacking semiconductor chips on a controller chip arranged on a substrate has attracted attention. For example, Patent Document 1 discloses a semiconductor chip assembly, which includes a controller chip and a memory chip supported by a supporting member on the controller chip. The semiconductor assembly 100 shown in FIG. 1A of Patent Document 1 can be said to have a dolmen structure. That is, the semiconductor assembly 100 includes a packaging substrate 102, a controller chip 103 arranged on the surface of the packaging substrate 102, a memory chip 106a and a memory chip 106b arranged above the controller chip 103, and a supporting member 130a and a supporting member 130b supporting the memory chip 106a. [Prior art literature] [Patent literature]
[專利文獻1]日本專利特表2017-515306號公報[Patent Document 1] Japanese Patent List No. 2017-515306
[發明所欲解決之課題] 專利文獻1揭示了作為支持構件（支持片），能夠使用矽等半導體材料，更具體而言，能夠使用切割半導體晶圓而得到的半導體材料的斷片（參照專利文獻1的[0012]、[0014]及圖2）。就使用半導體晶圓製造支石墓結構用的支持片而言，與普通的半導體晶片的製造同樣，例如需要以下的各步驟。 （1）在半導體晶圓上貼附背面研磨帶（back grind tape）的步驟； （2）背面研磨半導體晶圓的步驟； （3）對切割環與配置在其中的背面研磨後的半導體晶圓貼附具有黏著層及接著劑層的膜（切割-黏晶一體型膜）的步驟； （4）自半導體晶圓剝離背面研磨帶的步驟； （5）將半導體晶圓單片化的步驟； （6）自黏著層拾取包含半導體晶片與接著劑片的積層體的支持片的步驟。 [Problems to be solved by the invention] Patent document 1 discloses that semiconductor materials such as silicon can be used as a supporting member (supporting sheet), and more specifically, a semiconductor material fragment obtained by cutting a semiconductor wafer can be used (see [0012], [0014] and FIG. 2 of Patent document 1). In terms of manufacturing a supporting sheet for a dolmen structure using a semiconductor wafer, the following steps are required, similar to the manufacturing of a general semiconductor chip. (1) A step of attaching a back grind tape to a semiconductor wafer; (2) A step of back grinding the semiconductor wafer; (3) A step of attaching a film having an adhesive layer and an adhesive layer (a dicing-bonding integrated film) to a dicing ring and a semiconductor wafer disposed therein after back grinding; (4) A step of peeling the back grind tape from the semiconductor wafer; (5) A step of singulating the semiconductor wafer; (6) A step of picking up a support sheet of a laminate including a semiconductor chip and an adhesive sheet from the adhesive layer.
本揭示提供一種支持片的製造方法，其能夠有效率地製造具有支石墓結構的半導體裝置的製造中所使用的支持片，進而可有助於半導體裝置的生產效率的提高。另外，本揭示提供一種使用所述支持片來有效地製造具有支石墓結構的半導體裝置的方法。 [解決課題之手段] The present disclosure provides a method for manufacturing a support sheet, which can efficiently manufacture a support sheet used in the manufacture of a semiconductor device having a dolmen structure, thereby contributing to improving the production efficiency of the semiconductor device. In addition, the present disclosure provides a method for efficiently manufacturing a semiconductor device having a dolmen structure using the support sheet. [Means for Solving the Problem]
本揭示的一個方面是有關於一種具有支石墓結構的半導體裝置的製造中所使用的支持片的製造方法。One aspect of the present disclosure is directed to a method for manufacturing a support sheet used in manufacturing a semiconductor device having a dolmen structure.
本揭示的製造方法的第一形態包括以下的步驟。 （A）準備積層膜的步驟，所述積層膜依次具備：基材膜、黏著層、以及支持片形成用膜； （B）藉由將支持片形成用膜單片化，而在黏著層的表面上形成多個支持片的步驟； （C）在藉由多個針自基材膜側上推支持片的狀態下拾取支持片的步驟， 所述支持片形成用膜為以下的膜的任一種。 ·由熱硬化性樹脂層構成的膜； ·由使熱硬化性樹脂層中至少一部分硬化而成的層構成的膜； ·包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的樹脂層的多層膜； ·包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的金屬層的多層膜。 The first form of the manufacturing method disclosed herein includes the following steps. (A) A step of preparing a laminated film, wherein the laminated film sequentially comprises: a substrate film, an adhesive layer, and a film for forming a support sheet; (B) A step of forming a plurality of support sheets on the surface of the adhesive layer by singulating the film for forming a support sheet; (C) A step of picking up the support sheet while the support sheet is pushed up from the substrate film side by a plurality of needles, wherein the film for forming a support sheet is any of the following films. · A film composed of a thermosetting resin layer; · A film composed of a layer formed by hardening at least a portion of a thermosetting resin layer; · A multilayer film including a thermosetting resin layer and a resin layer having higher rigidity than the thermosetting resin layer; · A multilayer film including a thermosetting resin layer and a metal layer having higher rigidity than the thermosetting resin layer.
本揭示的製造方法的第二形態包括以下的步驟。 （A）準備積層膜的步驟，所述積層膜依次具備：基材膜、黏著層、以及支持片形成用膜； （B）藉由將支持片形成用膜單片化，而在黏著層的表面上形成多個支持片的步驟； （C）在藉由具有平坦的前端面的構件自基材膜側上推支持片的狀態下拾取支持片的步驟， 所述支持片形成用膜為以下的膜的任一種。 ·由熱硬化性樹脂層構成的膜； ·由使熱硬化性樹脂層中至少一部分硬化而成的層構成的膜； ·包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的樹脂層的多層膜； ·包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的金屬層的多層膜。 The second form of the manufacturing method disclosed herein includes the following steps. (A) A step of preparing a laminated film, wherein the laminated film sequentially comprises: a substrate film, an adhesive layer, and a film for forming a support sheet; (B) A step of forming a plurality of support sheets on the surface of the adhesive layer by singulating the film for forming a support sheet; (C) A step of picking up the support sheet while the support sheet is pushed up from the substrate film side by a member having a flat front end surface, wherein the film for forming a support sheet is any of the following films. · A film composed of a thermosetting resin layer; · A film composed of a layer formed by hardening at least a portion of a thermosetting resin layer; · A multilayer film including a thermosetting resin layer and a resin layer having higher rigidity than the thermosetting resin layer; · A multilayer film including a thermosetting resin layer and a metal layer having higher rigidity than the thermosetting resin layer.
本揭示中，支持片形成用膜所具有的樹脂層例如為聚醯亞胺層。樹脂層例如由與熱硬化性樹脂層不同的材質構成。支持片形成用膜所具有的金屬層例如為銅層或鋁層。再者，上述熱硬化性樹脂層的熱硬化後的剛性可低於樹脂層或金屬層的剛性，亦可高於樹脂層或金屬層的剛性。 剛性是指物體對彎曲或扭曲能夠承受破壞的能力。 In the present disclosure, the resin layer of the support sheet forming film is, for example, a polyimide layer. The resin layer is, for example, made of a material different from that of the thermosetting resin layer. The metal layer of the support sheet forming film is, for example, a copper layer or an aluminum layer. Furthermore, the rigidity of the thermosetting resin layer after heat curing may be lower than the rigidity of the resin layer or the metal layer, or may be higher than the rigidity of the resin layer or the metal layer. Rigidity refers to the ability of an object to withstand damage due to bending or twisting.
在本揭示的所述製造方法中，使用將支持片形成用膜單片化而獲得的支持片。藉此，與使用切割半導體晶圓而得到的半導體材料的斷片作為支持片的先前的製造方法相比，能夠簡化製作支持片的步驟。即，先前需要上述（1）～（6）的步驟，與此相對，支持片形成用膜不包含半導體晶圓，故能夠省略與半導體晶圓的背面研磨相關的（1）、（2）及（4）的步驟。另外，由於不使用較樹脂材料昂貴的半導體晶圓，故亦能夠削減成本。再者，由於熱硬化性樹脂層相對於其他構件（例如基板）具有接著性，因此可不在支持片上另外設置接著劑層等。In the manufacturing method disclosed herein, a support sheet obtained by singulating a support sheet forming film is used. In this way, the steps of making the support sheet can be simplified compared to the previous manufacturing method that uses a broken piece of semiconductor material obtained by cutting a semiconductor wafer as the support sheet. That is, the above-mentioned steps (1) to (6) were previously required, while the support sheet forming film does not include a semiconductor wafer, so the steps (1), (2) and (4) related to the back grinding of the semiconductor wafer can be omitted. In addition, since semiconductor wafers that are more expensive than resin materials are not used, costs can also be reduced. Furthermore, since the thermosetting resin layer has adhesion to other components (such as a substrate), it is not necessary to set an adhesive layer on the support sheet.
根據本發明者等人的研究，支持片自黏著層的拾取性取決於支持片與黏著層的界面的剝離（以下稱為「界面剝離」）的容易度、及支持片的邊緣自黏著劑層的剝離（以下稱為「邊緣剝離」）的容易度。在所述第一形態的製造方法的（C）步驟中，藉由多個針上推支持片，而容易產生支持片與黏著層的界面剝離，能夠實現支持片自黏著層的優異的拾取性。According to the research of the inventors, the pick-up property of the support sheet from the adhesive layer depends on the ease of peeling off the interface between the support sheet and the adhesive layer (hereinafter referred to as "interface peeling") and the ease of peeling off the edge of the support sheet from the adhesive layer (hereinafter referred to as "edge peeling"). In step (C) of the manufacturing method of the first form, the interface between the support sheet and the adhesive layer is easily peeled off by pushing up the support sheet with multiple needles, so that the excellent pick-up property of the support sheet from the adhesive layer can be achieved.
所述第二形態的製造方法基於本發明者等人根據以下現象得到的見解。即，例如，在紫外線硬化型黏著層的表面上形成多個支持片之後，即使在藉由紫外線照射使黏著層的黏著力降低之後，在支持片的拾取步驟中亦會產生無法實現充分的拾取性的現象。為了改善此種情況，本發明者等人研究了在拾取步驟中使用的上推裝置的種類。其結果發現，具備具有平坦的前端面的構件的上推裝置對提高支持片的邊緣的剝離性有效。藉由用平坦的前端面自基材膜側上推支持片，與用多個針上推支持片的情況相比，能夠抑制在支持片上產生因上推而引起的痕跡，並且能夠有效率地將支持片的邊緣自黏著層剝離。再者，支持片的邊緣不易剝離的狀況不限於採用紫外線硬化型的黏著層的情況，即使在採用感壓型的黏著層的情況下，例如在將支持片形成用膜單片化時，超出支持片形成用膜及黏著層而將基材膜的一部分亦切斷的情況下亦會產生。The manufacturing method of the second form is based on the insights obtained by the inventors of the present invention based on the following phenomenon. That is, for example, after a plurality of support sheets are formed on the surface of a UV-curable adhesive layer, even after the adhesive force of the adhesive layer is reduced by UV irradiation, a phenomenon occurs in which sufficient pick-up performance cannot be achieved in the pick-up step of the support sheet. In order to improve this situation, the inventors of the present invention studied the types of push-up devices used in the pick-up step. As a result, it was found that a push-up device having a component with a flat front end surface is effective in improving the releasability of the edge of the support sheet. By pushing up the support sheet from the side of the base film with the flat front end surface, it is possible to suppress the occurrence of marks on the support sheet due to pushing up, compared with the case where the support sheet is pushed up with a plurality of needles, and the edge of the support sheet can be efficiently peeled off from the adhesive layer. Furthermore, the situation where the edge of the support sheet is not easy to peel off is not limited to the case where the UV curing adhesive layer is used, and even when the pressure-sensitive adhesive layer is used, for example, when the support sheet forming film is separated into individual pieces, it will also occur when a part of the base film is cut beyond the support sheet forming film and the adhesive layer.
在支持片形成用膜為由熱硬化性樹脂層構成的膜、或為由使熱硬化性樹脂層中的至少一部分硬化而成的層構成的膜的情況下，自實現更優異的拾取性的觀點出發，（B）步驟可依次包括：將切口形成至支持片形成用膜的厚度方向的中途的步驟；及藉由擴展而將經冷卻的狀態的支持片形成用膜單片化的步驟。另一方面，在支持片形成用膜為包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的樹脂層或金屬層的多層膜的情況下，自同樣的觀點出發，在（A）步驟中準備的積層膜中，熱硬化性樹脂層位於樹脂層與黏著層之間、或金屬層與黏著層之間，（B）步驟亦可依次包括：切斷支持片形成用膜的樹脂層或金屬層並且將切口形成至熱硬化性樹脂層的厚度方向的中途的步驟；及藉由擴展將經冷卻的狀態的支持片形成用膜單片化的步驟。在（B）步驟中，將熱硬化性樹脂層半切割後，藉由冷卻擴展將熱硬化性樹脂層單片化，藉此接著劑片的邊緣不會進入黏著層，故能夠更高度地實現優異的拾取性。In the case where the support sheet forming film is a film composed of a thermosetting resin layer or a film composed of a layer formed by hardening at least a portion of a thermosetting resin layer, from the perspective of achieving better pickup properties, the (B) step may sequentially include: a step of forming a cut halfway in the thickness direction of the support sheet forming film; and a step of singulating the support sheet forming film in a cooled state by expansion. On the other hand, in the case where the support sheet forming film is a multilayer film including a thermosetting resin layer and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer, from the same viewpoint, in the multilayer film prepared in step (A), the thermosetting resin layer is located between the resin layer and the adhesive layer, or between the metal layer and the adhesive layer, and step (B) may also sequentially include: a step of cutting the resin layer or the metal layer of the support sheet forming film and forming a cut to the middle of the thickness direction of the thermosetting resin layer; and a step of singulating the support sheet forming film in a cooled state by expansion. In step (B), after the thermosetting resin layer is cut in half, the thermosetting resin layer is separated into individual pieces by cooling and expansion, so that the edge of the adhesive sheet does not enter the adhesive layer, thereby achieving a higher level of excellent pickup performance.
本揭示的一個方面是有關於一種具有支石墓結構的半導體裝置的製造方法。該製造方法包括以下的步驟。 （D）在基板上配置第一晶片的步驟； （E）在基板上且為第一晶片的周圍或應配置第一晶片的區域的周圍，配置藉由本揭示的製造方法而製造的多個支持片的步驟； （F）準備帶接著劑片的晶片的步驟，所述帶接著劑片的晶片具備第二晶片、及設置在第二晶片的一個面上的接著劑片； （G）藉由在多個支持片的表面上配置帶接著劑片的晶片來構築支石墓結構的步驟。 One aspect of the present disclosure is a method for manufacturing a semiconductor device having a dolmen structure. The manufacturing method includes the following steps. (D) a step of configuring a first chip on a substrate; (E) a step of configuring a plurality of support sheets manufactured by the manufacturing method of the present disclosure on the substrate and around the first chip or around the area where the first chip is to be configured; (F) a step of preparing a chip with a bonding agent sheet, wherein the chip with a bonding agent sheet has a second chip and a bonding agent sheet disposed on one surface of the second chip; (G) a step of constructing a dolmen structure by configuring the chip with a bonding agent sheet on the surface of a plurality of support sheets.
（D）步驟及（E）步驟可先實施任一項。在先實施（D）步驟的情況下，在（E）步驟中，只要在基板上且為第一晶片的周圍配置多個支持片即可。另一方面，在先實施（E）步驟的情況下，在（E）步驟中，在基板上且為應配置第一晶片的區域的周圍配置多個支持片，然後，在（D）步驟中，在該區域配置第一晶片即可。 [發明的效果] Either step (D) or step (E) may be implemented first. When step (D) is implemented first, in step (E), it is sufficient to arrange multiple support sheets on the substrate and around the first chip. On the other hand, when step (E) is implemented first, in step (E), multiple support sheets are arranged on the substrate and around the area where the first chip is to be arranged, and then, in step (D), the first chip is arranged in the area. [Effect of the invention]
根據本揭示，提供一種能夠有效率地製造具有支石墓結構的半導體裝置的製造中所使用的支持片，可有助於半導體裝置的生產效率的提高的支持片的製造方法。另外，根據本揭示，提供一種使用所述支持片來有效率地製造具有支石墓結構的半導體裝置的方法。According to the present disclosure, a support sheet used in manufacturing a semiconductor device having a dolmen structure is provided, and a method for manufacturing the support sheet that can contribute to improving the production efficiency of the semiconductor device is provided. In addition, according to the present disclosure, a method for efficiently manufacturing a semiconductor device having a dolmen structure using the support sheet is provided.
以下，參照圖式對本揭示的實施方式進行詳細說明。其中，本發明不限定於以下的實施方式。再者，本說明書中，所謂「(甲基)丙烯酸」是指丙烯酸或甲基丙烯酸，所謂「(甲基)丙烯酸酯」是指丙烯酸酯或與其對應的甲基丙烯酸酯。所謂「A或B」，只要包含A與B的任一者即可，亦可兩者均包含。The following is a detailed description of the embodiments of the present disclosure with reference to the drawings. However, the present invention is not limited to the following embodiments. Furthermore, in this specification, "(meth)acrylic acid" refers to acrylic acid or methacrylic acid, and "(meth)acrylate" refers to acrylate or its corresponding methacrylate. The so-called "A or B" only needs to include either A or B, or both.
於本說明書中，用語「層」於以平面圖的形式進行觀察時，除了於整個面形成的形狀的結構以外，亦包含部分地形成的形狀的結構。另外，於本說明書中，「步驟」這一用語不僅是指獨立的步驟，即便在無法與其他步驟明確地加以區分的情況下，只要達成該步驟的預期的作用，則亦包含於本用語中。另外，使用「～」所表示的數值範圍表示包含「～」的前後所記載的數值分別作為最小值及最大值的範圍。In this specification, the term "layer" includes not only structures of shapes formed on the entire surface but also structures of shapes formed partially when viewed in a plan view. In addition, in this specification, the term "step" refers not only to independent steps, but also to steps that cannot be clearly distinguished from other steps as long as the intended effect of the step is achieved. In addition, a numerical range represented by "to" indicates a range that includes the numerical values before and after the "to" as the minimum and maximum values, respectively.
於本說明書中，關於組成物中的各成分的含量，於在組成物中存在多種相當於各成分的物質的情況下，只要無特別說明，則是指組成物中存在的所述多種物質的合計量。另外，例示材料只要無特別說明，則可單獨使用，亦可組合使用二種以上。另外，本說明書中階段性地記載的數值範圍中，某階段的數值範圍的上限值或下限值亦可替換為其他階段的數值範圍的上限值或下限值。另外，本說明書中所記載的數值範圍中，該數值範圍的上限值或下限值可替換為實施例中所示的值。In this specification, when there are multiple substances equivalent to each component in the composition, the content of each component in the composition refers to the total amount of the multiple substances present in the composition unless otherwise specified. In addition, the illustrative materials can be used alone or in combination of two or more unless otherwise specified. In addition, in the numerical ranges recorded in stages in this specification, the upper limit or lower limit of the numerical range of a certain stage can also be replaced by the upper limit or lower limit of the numerical range of other stages. In addition, in the numerical ranges recorded in this specification, the upper limit or lower limit of the numerical range can be replaced by the value shown in the embodiments.
（半導體裝置）
圖1是示意性地表示具有支石墓結構的半導體裝置的一例的剖面圖。該圖所示的半導體裝置100包括：基板10、配置在基板10的表面上的晶片T1（第一晶片）、配置於基板10的表面上且為晶片T1的周圍的多個支持片Dc、配置於晶片T1的上方的晶片T2（第二晶片）、由晶片T2與多個支持片Dc夾持的接著劑片Tc、積層在晶片T2上的晶片T3、晶片T4、將基板10的表面上的電極（未圖示）與晶片T1～晶片T4分別電連接的多個導線w；以及填充在晶片T1與晶片T2的間隙等中的密封材50。
(Semiconductor device)
FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor device having a dolmen structure. The semiconductor device 100 shown in the figure includes: a
在本實施方式中，藉由多個支持片Dc、晶片T2、以及位於支持片Dc與晶片T2之間的接著劑片Tc而在基板10上構成支石墓結構。晶片T1與接著劑片Tc分離。藉由適當設定支持片Dc的厚度，能夠確保用於連接晶片T1的上表面與基板10的導線w的空間。藉由使晶片T1與接著劑片Tc分離，能夠防止與晶片T1連接的導線w的上部接觸晶片T2所導致的導線w的短路。另外，由於無需將導線埋入與晶片T2接觸的接著劑片Tc，故具有能夠減薄接著劑片Tc的優點。In the present embodiment, a dolmen structure is formed on the
如圖1所示，晶片T1與晶片T2之間的接著劑片Tc覆蓋晶片T2中的與晶片T1相對的區域，並且自區域連續地延伸至晶片T2的周緣側。即，一個接著劑片Tc覆蓋晶片T2的區域，並夾設在晶片T2與多個支持片之間而將該些接著。再者，圖1中示出了接著劑片Tc設置成覆蓋晶片T2的一個面（下表面）的整體的形態。然而，由於接著劑片Tc在半導體裝置100的製造過程中可能收縮，因此只要實質上覆蓋晶片T2的一個面（下表面）的整體即可，例如，於晶片T2的周緣的一部分亦可存在未被接著劑片Tc覆蓋的部位。圖1中的晶片T2的下表面相當於晶片的背面。近年來晶片的背面多形成有凹凸。藉由晶片T2背面的實質上的整體被接著劑片Tc覆蓋，能夠抑制晶片T2產生裂縫或破裂。As shown in FIG1 , the bonding agent sheet Tc between the chip T1 and the chip T2 covers the area of the chip T2 opposite to the chip T1, and extends continuously from the area to the peripheral side of the chip T2. That is, one bonding agent sheet Tc covers the area of the chip T2, and is sandwiched between the chip T2 and a plurality of support sheets to bond them. Furthermore, FIG1 shows a configuration in which the bonding agent sheet Tc is arranged to cover the entirety of one surface (lower surface) of the chip T2. However, since the bonding agent sheet Tc may shrink during the manufacturing process of the semiconductor device 100, it is sufficient to substantially cover the entirety of one surface (lower surface) of the chip T2. For example, a portion of the periphery of the chip T2 may also exist that is not covered by the bonding agent sheet Tc. The lower surface of the chip T2 in FIG1 corresponds to the back of the chip. In recent years, the back of the chip has been formed with many bumps and depressions. By substantially covering the back of the chip T2 with the adhesive sheet Tc, cracks or breakage of the chip T2 can be suppressed.
基板10可以是有機基板，亦可以是引線框架等金屬基板。基板10中，自抑制半導體裝置100的翹曲的觀點來看，基板10的厚度例如為90 μm～300 μm，亦可為90 μm～210 μm。The
晶片T1例如是控制器晶片，藉由接著劑片T1c接著於基板10且藉由導線w與基板10電連接。俯視下的晶片T1的形狀例如為矩形（正方形或長方形）。晶片T1的一邊的長度例如為5 mm以下，亦可為2 mm～5 mm或1 mm～5 mm。晶片T1的厚度例如為10 μm～150 μm，亦可為20 μm～100 μm。The chip T1 is, for example, a controller chip, which is connected to the
晶片T2例如是記憶體晶片，並經由接著劑片Tc而接著在支持片Dc上。俯視時，晶片T2具有大於晶片T1的尺寸。俯視下的晶片T2的形狀例如為矩形（正方形或長方形）。晶片T2的一邊的長度例如為20 mm以下，亦可為4 mm～20 mm或4 mm～12 mm。晶片T2的厚度例如是10 μm～170 μm，亦可為20 μm～120 μm。再者，晶片T3、晶片T4亦例如是記憶體晶片，經由接著劑片Tc接著在晶片T2上。晶片T3、晶片T4的一邊的長度只要與晶片T2相同即可，晶片T3、晶片T4的厚度亦與晶片T2相同即可。Chip T2 is, for example, a memory chip, and is bonded to a support chip Dc via a bonding agent sheet Tc. When viewed from above, chip T2 has a size larger than chip T1. The shape of chip T2 when viewed from above is, for example, a rectangle (square or rectangular). The length of one side of chip T2 is, for example, less than 20 mm, and may also be 4 mm to 20 mm or 4 mm to 12 mm. The thickness of chip T2 is, for example, 10 μm to 170 μm, and may also be 20 μm to 120 μm. Furthermore, chip T3 and chip T4 are also, for example, memory chips, and are bonded to chip T2 via a bonding agent sheet Tc. The length of one side of chip T3 and chip T4 only needs to be the same as that of chip T2, and the thickness of chip T3 and chip T4 also needs to be the same as that of chip T2.
支持片Dc發揮在晶片T1的周圍形成空間的間隔物的作用。支持片Dc為由熱硬化性樹脂組成物的硬化物構成。再者，如圖2的（a）所示，可在晶片T1的兩側的隔開的位置配置兩個支持片Dc（形狀：長方形），亦可如圖2的（b）所示，在與晶片T1的角部對應的位置分別配置一個支持片Dc（形狀：正方形，共計4個）。俯視下的支持片Dc的一邊的長度例如為20 mm以下，亦可為1 mm～20 mm或1 mm～12 mm。支持片Dc的厚度（高度）例如為10 μm～180 μm，亦可為20 μm～120 μm。The support sheet Dc plays the role of a spacer that forms a space around the chip T1. The support sheet Dc is made of a hardened material of a thermosetting resin composition. Furthermore, as shown in FIG2 (a), two support sheets Dc (shape: rectangular) can be arranged at separated positions on both sides of the chip T1, or as shown in FIG2 (b), one support sheet Dc (shape: square, a total of 4) can be arranged at each position corresponding to the corner of the chip T1. The length of one side of the support sheet Dc in a top view is, for example, less than 20 mm, and can also be 1 mm to 20 mm or 1 mm to 12 mm. The thickness (height) of the support sheet Dc is, for example, 10 μm to 180 μm, and can also be 20 μm to 120 μm.
＜第一實施方式＞ （支持片的製造方法） 本實施方式的支持片的製造方法包括以下的步驟。 （A）準備支持片形成用積層膜20（以下，視情況而稱為「積層膜20」）的步驟，其依次具備：基材膜1；黏著層2，具有與基材膜1相對的第一面f1及其相反側的第二面f2；以及支持片形成用膜D，以覆蓋黏著層2的第二面f2的中央部的方式配置（參照圖3的（a）及圖3的（b））； （B）藉由將支持片形成用膜D單片化，而在黏著層2的第二面f2上形成多個支持片的步驟（參照圖5的（b））； （C）在用多個針N將支持片自基材膜側上推的狀態下拾取支持片Da的步驟（參照圖6的（b））。 再者，圖1所示的支持片Dc是熱硬化性樹脂組成物硬化後的支持片。另一方面，支持片Da是熱硬化性樹脂組成物完全硬化之前的狀態的支持片。 <First embodiment> (Method for manufacturing a support sheet) The method for manufacturing a support sheet of this embodiment includes the following steps. (A) A step of preparing a support sheet forming laminate film 20 (hereinafter referred to as "laminated film 20" as the case may be), which comprises, in order: a base film 1; an adhesive layer 2 having a first surface f1 opposite to the base film 1 and a second surface f2 opposite thereto; and a support sheet forming film D arranged so as to cover the central portion of the second surface f2 of the adhesive layer 2 (see (a) of FIG. 3 and (b) of FIG. 3); (B) A step of forming a plurality of support sheets on the second surface f2 of the adhesive layer 2 by singulating the support sheet forming film D (see (b) of FIG. 5); (C) A step of picking up a support sheet Da while the support sheet is pushed up from the base film side by a plurality of needles N (see (b) of FIG. 6). Furthermore, the support sheet Dc shown in FIG1 is a support sheet after the thermosetting resin composition is cured. On the other hand, the support sheet Da is a support sheet in a state before the thermosetting resin composition is completely cured.
[（A）步驟] 積層膜20具備基材膜1、黏著層2、及支持片形成用膜D。基材膜1例如為聚對苯二甲酸乙二酯膜（PET（polyethylene terephthalate）膜）、聚烯烴膜。作為基材膜1，可使用具有熱收縮性的膜。黏著層2具有與基材膜1相對的第一面f1及其相反側的第二面f2。黏著層2藉由沖孔等形成為圓形（參照圖3的（a））。黏著層2為由感壓型的黏著劑構成。再者，黏著層2可含有具有光反應性的具有碳-碳雙鍵的樹脂，亦可不含有。例如，黏著層2可藉由對其規定區域照射紫外線而降低該區域的黏著性，例如，亦可殘存具有光反應性的具有碳-碳雙鍵的樹脂。 [(A) Step] The laminate film 20 has a base film 1, an adhesive layer 2, and a film D for forming a support sheet. The base film 1 is, for example, a polyethylene terephthalate film (PET (polyethylene terephthalate) film) or a polyolefin film. As the base film 1, a film having heat shrinkability can be used. The adhesive layer 2 has a first surface f1 opposite to the base film 1 and a second surface f2 on the opposite side thereof. The adhesive layer 2 is formed into a circular shape by punching or the like (see (a) of FIG. 3 ). The adhesive layer 2 is composed of a pressure-sensitive adhesive. Furthermore, the adhesive layer 2 may or may not contain a photoreactive resin having a carbon-carbon double bond. For example, the adhesive layer 2 can reduce the adhesiveness of a specified area by irradiating the area with ultraviolet light, and for example, a photoreactive resin having a carbon-carbon double bond can remain.
支持片形成用膜D藉由沖孔等形成為圓形，具有較黏著層2小的直徑（參照圖3的（a））。支持片形成用膜D為由熱硬化性樹脂組成物構成。構成支持片形成用膜D的熱硬化性樹脂組成物經過半硬化（B階段）狀態，藉由之後的硬化處理能夠成為完全硬化物（C階段）狀態。熱硬化性樹脂組成物含有環氧樹脂、硬化劑、彈性體（例如丙烯酸樹脂），並根據需要進一步含有無機填料及硬化促進劑等。對於構成支持片形成用膜D的熱硬化性樹脂組成物的詳細情況將在後面敘述。The support sheet forming film D is formed into a circular shape by punching or the like, and has a smaller diameter than the adhesive layer 2 (refer to (a) in FIG. 3 ). The support sheet forming film D is composed of a thermosetting resin composition. The thermosetting resin composition constituting the support sheet forming film D is in a semi-cured (B stage) state, and can become a fully cured (C stage) state by a subsequent curing treatment. The thermosetting resin composition contains an epoxy resin, a curing agent, an elastomer (such as an acrylic resin), and further contains an inorganic filler and a curing accelerator, etc. as needed. The details of the thermosetting resin composition constituting the support sheet forming film D will be described later.
積層膜20例如可藉由將第一積層膜與第二積層膜貼合來製造，所述第一積層膜具有基材膜1且在基材膜1的表面上具有黏著層2，所述第二積層膜具有覆蓋膜3且在覆蓋膜3的表面上具有支持片形成用膜D（參照圖4）。第一積層膜可經過如下步驟而獲得：在基材膜1的表面上藉由塗佈而形成黏著層的步驟、以及藉由沖孔等將黏著層加工成規定形狀（例如圓形）的步驟。第二積層膜可經過如下步驟而獲得：在覆蓋膜3（例如PET膜或聚乙烯膜）的表面上藉由塗佈而形成支持片形成用膜的步驟、及藉由沖孔等將支持片形成用膜加工成規定的形狀（例如、圓形）的步驟。當使用積層膜20時，覆蓋膜3在適當的時機被剝離。The laminate film 20 can be manufactured, for example, by laminating a first laminate film having a base film 1 and an adhesive layer 2 on the surface of the base film 1, and a second laminate film having a cover film 3 and a support sheet forming film D on the surface of the cover film 3 (see FIG. 4 ). The first laminate film can be obtained by forming the adhesive layer on the surface of the base film 1 by coating, and processing the adhesive layer into a predetermined shape (e.g., a circular shape) by punching or the like. The second laminate film can be obtained by forming a support sheet forming film on the surface of the cover film 3 (e.g., PET film or polyethylene film) by coating, and processing the support sheet forming film into a predetermined shape (e.g., circular shape) by punching, etc. When the laminate film 20 is used, the cover film 3 is peeled off at an appropriate time.
[（B）步驟] 如圖5的（a）所示，將切割環DR貼附於積層膜20。即，將切割環DR貼附於黏著層2的周緣區域2a，成為在切割環DR的內側配置有支持片形成用膜D的狀態。藉由切割將支持片形成用膜D單片化（參照圖5的（b））。藉此，能夠自支持片形成用膜D得到多個支持片Da。之後，如圖5的（c）所示，藉由用環R將基材膜1中的切割環DR的內側區域1a上推，對基材膜1賦予張力。藉此，能夠擴大鄰接的支持片Da的間隔。再者，較佳為用以單片化的切口形成至支持片形成用膜D的外緣。支持片形成用膜D的直徑例如可為300 mm～310 mm或300 mm～305 mm。支持片形成用膜D的俯視下的形狀不限於圖3的（a）所示的圓形，亦可為矩形（正方形或長方形）。 [(B) Step] As shown in (a) of FIG. 5 , a cutting ring DR is attached to the laminated film 20. That is, the cutting ring DR is attached to the peripheral area 2a of the adhesive layer 2, so that the support sheet forming film D is arranged on the inner side of the cutting ring DR. The support sheet forming film D is singulated by cutting (refer to (b) of FIG. 5 ). Thereby, a plurality of support sheets Da can be obtained from the support sheet forming film D. Thereafter, as shown in (c) of FIG. 5 , the inner area 1a of the cutting ring DR in the base film 1 is pushed up by the ring R, so that tension is applied to the base film 1. Thereby, the interval between adjacent support sheets Da can be expanded. Furthermore, it is preferable that the cut for singulation is formed to the outer edge of the support sheet forming film D. The diameter of the support sheet forming film D can be, for example, 300 mm to 310 mm or 300 mm to 305 mm. The shape of the support sheet forming film D in a top view is not limited to the circular shape shown in FIG. 3 (a), but can also be a rectangle (square or rectangular).
作為基材膜1而使用具有熱收縮性的膜的情況下，亦可在（B）步驟後，藉由對基材膜1中的切割環DR的內側區域1a加熱而使內側區域1a收縮。圖6的（a）是示意性地表示藉由加熱器H的吹風來加熱內側區域1a的狀態的剖面圖。使內側區域1a呈環狀收縮而對基材膜1賦予張力，藉此能夠維持鄰接的支持片Da的間隔變寬的狀態。藉此，能夠更進一步抑制拾取錯誤的發生，並且能夠提高拾取步驟中的支持片Da的視認性。When a film having heat shrinkability is used as the base film 1, the inner region 1a of the cutting ring DR in the base film 1 can be shrunk by heating the inner region 1a after step (B). (a) of FIG6 is a cross-sectional view schematically showing a state in which the inner region 1a is heated by blowing air from a heater H. By shrinking the inner region 1a in a ring shape and applying tension to the base film 1, the gap between the adjacent support sheet Da can be maintained in a widened state. In this way, the occurrence of pick-up errors can be further suppressed, and the visibility of the support sheet Da in the pick-up step can be improved.
[（C）步驟] 如圖6的（b）所示，用具備多個針N的上推裝置將支持片Da上推。作為上推裝置，例如，可使用法斯福德科技（FASFORD TECHNOLOGY）公司製造的DB-830普拉斯（plus）+（商品名）。藉由用多個針N將支持片Da自基材膜1側上推，能夠對黏著層2與支持片Da的界面局部地施加按壓力（參照圖7）。藉此，兩者的界面剝離有效率地進行，可實現優異的拾取性。再者，自抑制因上推而產生的痕跡殘留在支持片Da的觀點出發，針N的前端可帶有弧度，亦可以是平坦的。 [Step (C)] As shown in (b) of FIG. 6 , the support sheet Da is pushed up by a push-up device equipped with a plurality of needles N. As the push-up device, for example, DB-830 Plus+ (trade name) manufactured by FASFORD TECHNOLOGY can be used. By using a plurality of needles N to push up the support sheet Da from the side of the substrate film 1, a pressing force can be locally applied to the interface between the adhesive layer 2 and the support sheet Da (see FIG. 7 ). In this way, the interface peeling of the two is carried out efficiently, and excellent pickup can be achieved. Furthermore, from the perspective of suppressing the trace residue generated by pushing up on the support sheet Da, the front end of the needle N can be curved or flat.
用吸附夾頭C抽引並拾取經上推的狀態的支持片Da。作為吸附夾頭C，例如可使用微機械（MICRO-MECHANICS）公司製造的橡膠吸頭（RUBBER TIP）RHAH-CA010005001（商品名）。再者，亦可藉由對切割前的支持片形成用膜D或上推前的支持片Da進行加熱，使熱硬化性樹脂的硬化反應進行。當拾取時，藉由使支持片Da適度的硬化，能夠實現更優異的拾取性。The support sheet Da in the pushed-up state is extracted and picked up by the suction chuck C. For example, the rubber suction tip (RUBBER TIP) RHAH-CA010005001 (trade name) manufactured by MICRO-MECHANICS can be used as the suction chuck C. Furthermore, the support sheet forming film D before cutting or the support sheet Da before being pushed up can be heated to allow the hardening reaction of the thermosetting resin to proceed. When picking up, by properly hardening the support sheet Da, better pick-up performance can be achieved.
（半導體裝置的製造方法）
對半導體裝置100的製造方法進行說明。本實施方式的製造方法包括以下的步驟。
（D）在基板10上配置第一晶片T1的步驟；
（E）在基板10上且為第一晶片T1的周圍配置多個支持片Da的步驟（參照圖8）；
（F）準備帶接著劑片的晶片T2a的步驟，所述帶接著劑片的晶片T2a具備第二晶片T2、及設置在第二晶片T2的一個面上的接著劑片Ta（參照圖9）；
（G）藉由在多個支持片Dc的表面上配置帶接著劑片的晶片T2a來構築支石墓結構的步驟（參照圖10）；
（H）用密封材50密封晶片T1與晶片T2的間隙等的步驟（參照圖1）。
(Manufacturing method of semiconductor device)
The manufacturing method of the semiconductor device 100 is described. The manufacturing method of this embodiment includes the following steps.
(D) a step of disposing a first chip T1 on a
[（D）步驟]
（D）步驟是在基板10上配置第一晶片T1的步驟。例如，首先，經由接著劑層T1c將晶片T1配置在基板10上的規定位置。然後，晶片T1藉由導線w與基板10電連接。（D）步驟可為在（E）步驟之前進行的步驟，亦可在（A）步驟之前、（A）步驟與（B）步驟之間、（B）步驟與（C）步驟之間、或（C）步驟與（E）步驟之間。
[Step (D)]
Step (D) is a step of configuring the first chip T1 on the
[（E）步驟]
（E）步驟是在基板10上且為第一晶片T1的周圍配置多個支持片Da的步驟。經過所述步驟製作圖8所示的結構體30。結構體30包括基板10、配置在基板10的表面上的晶片T1、及多個支持片Da。支持片Da的配置藉由壓接處理進行即可。壓接處理例如較佳為在80℃～180℃、0.01 MPa～0.50 Mpa的條件下實施0.5秒～3.0秒。再者，支持片Da可在（E）步驟的時刻完全硬化而成為支持片Dc，亦可不在該時刻完全硬化。支持片Da較佳為在（G）步驟開始前的時刻完全硬化而成為支持片Dc。
[Step (E)]
Step (E) is a step of configuring a plurality of support sheets Da on the
[（F）步驟] （F）步驟是準備圖9所示的帶接著劑片的晶片T2a的步驟。帶接著劑片的晶片T2a包括晶片T2、及設置在晶片T2的一個表面的接著劑片Ta。帶接著劑片的晶片T2a例如能夠使用半導體晶圓及切割-黏晶一體型膜，經過切割步驟及拾取步驟而獲得。 [Step (F)] Step (F) is a step of preparing a chip T2a with a bonding agent as shown in FIG. 9. The chip T2a with a bonding agent includes a chip T2 and a bonding agent Ta disposed on one surface of the chip T2. The chip T2a with a bonding agent can be obtained, for example, by using a semiconductor wafer and a dicing-bonding integrated film, through a dicing step and a picking step.
[（G）步驟] （G）步驟是以接著劑片Ta與多個支持片Dc的上表面接觸的方式，在晶片T1的上方配置帶接著劑片的晶片T2a的步驟。具體而言，經由接著劑片Ta將晶片T2壓接於支持片Dc的上表面。該壓接處理例如較佳為在80℃～180℃、0.01 MPa～0.50 MPa的條件下實施0.5秒～3.0秒。繼而，藉由加熱使接著劑片Ta硬化。該硬化處理例如較佳為在60℃～175℃、0.01 MPa～1.0 MPa的條件下實施5分鐘以上。藉此，接著劑片Ta硬化而成為接著劑片Tc。經過該步驟，在基板10上構築支石墓結構（參照圖10）。藉由使晶片T1與帶接著劑片的晶片T2a分離，能夠防止因導線w的上部與晶片T2接觸而引起的導線w的短路。另外，由於無需在與晶片T2接觸的接著劑片Ta中埋入導線，故具有能夠使接著劑片Ta變薄的優點。 [Step (G)] Step (G) is a step of arranging a chip T2a with a bonding agent sheet above the chip T1 in such a manner that the bonding agent sheet Ta contacts the upper surfaces of a plurality of support sheets Dc. Specifically, the chip T2 is pressed onto the upper surface of the support sheet Dc via the bonding agent sheet Ta. The pressing treatment is preferably performed at 80°C to 180°C and 0.01 MPa to 0.50 MPa for 0.5 seconds to 3.0 seconds. Then, the bonding agent sheet Ta is hardened by heating. The hardening treatment is preferably performed at 60°C to 175°C and 0.01 MPa to 1.0 MPa for more than 5 minutes. Thereby, the bonding agent sheet Ta is hardened to become the bonding agent sheet Tc. After this step, a dolmen structure is constructed on the substrate 10 (see FIG. 10 ). By separating the chip T1 from the chip T2a with the adhesive sheet, it is possible to prevent the short circuit of the wire w caused by the upper part of the wire w contacting the chip T2. In addition, since it is not necessary to bury the wire in the adhesive sheet Ta contacting the chip T2, it has the advantage of being able to make the adhesive sheet Ta thinner.
在（G）步驟後、（H）步驟前，經由接著劑片在晶片T2上配置晶片T3，進而，經由接著劑片在晶片T3上配置晶片T4。接著劑片只要是與上述接著劑片Ta同樣的熱硬化性樹脂組成物即可，藉由加熱硬化而成為接著劑片Tc（參照圖1）。另一方面，藉由導線w分別將晶片T2、晶片T3、晶片T4與基板10電連接。再者，積層在晶片T1上方的晶片的數量不限於本實施方式中的三個，適當設定即可。After step (G) and before step (H), chip T3 is arranged on chip T2 via a bonding agent, and chip T4 is arranged on chip T3 via a bonding agent. The bonding agent can be made of the same thermosetting resin composition as the bonding agent Ta, and is hardened by heat to form bonding agent Tc (see FIG. 1 ). On the other hand, chip T2, chip T3, and chip T4 are electrically connected to
[（H）步驟] （H）步驟是用密封材50將晶片T1與晶片T2之間的間隙等密封的步驟。經過該步驟，完成圖1所示的半導體裝置100。 [Step (H)] Step (H) is a step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50. After this step, the semiconductor device 100 shown in FIG. 1 is completed.
（構成支持片形成用膜的熱硬化性樹脂組成物） 如上所述，構成支持片形成用膜D的熱硬化性樹脂組成物含有環氧樹脂、硬化劑及彈性體，根據需要更含有無機填料及硬化促進劑等。根據本發明者等人的研究，較佳為支持片Da及硬化後的支持片Dc具有以下特性。 ·特性1：在基板10的規定位置熱壓接支持片Da時不易產生位置偏移（120℃下的支持片Da的熔融黏度例如為4300 Pa·s～50000 Pa·s或5000 Pa·s～40000 Pa·s）； ·特性2：在半導體裝置100內支持片Dc發揮應力緩和性（熱硬化性樹脂組成物含有彈性體（橡膠成分））； ·特性3：與帶接著劑片的晶片的接著劑片Tc的接著強度充分高（支持片Dc相對於接著劑片Tc的晶粒剪切（dieshear）強度例如為2.0 Mpa～7.0 Mpa或3.0 Mpa～6.0 Mpa）； ·特性4：伴隨硬化的收縮率充分小； ·特性5：在拾取步驟中基於照相機的支持片Da的視認性良好（熱硬化性樹脂組成物例如含有著色劑）； ·特性6：支持片Dc具有充分的機械強度。 (Thermosetting resin composition constituting the film for forming the support sheet) As described above, the thermosetting resin composition constituting the film D for forming the support sheet contains an epoxy resin, a hardener and an elastomer, and further contains an inorganic filler and a hardening accelerator as needed. According to the research of the inventors and others, it is preferred that the support sheet Da and the hardened support sheet Dc have the following characteristics. ·Characteristic 1: Positional deviation is not easy to occur when the support sheet Da is heat-pressed at a predetermined position of the substrate 10 (the melt viscosity of the support sheet Da at 120°C is, for example, 4300 Pa·s to 50000 Pa·s or 5000 Pa·s to 40000 Pa·s); ·Characteristic 2: The support sheet Dc in the semiconductor device 100 exerts stress relaxation (the thermosetting resin composition contains an elastomer (rubber component)); ·Characteristic 3: The bonding strength with the bonding agent sheet Tc of the wafer with the bonding agent sheet is sufficiently high (the grain shear strength of the support sheet Dc relative to the bonding agent sheet Tc is, for example, 2.0 Mpa to 7.0 Mpa or 3.0 Mpa to 6.0 Mpa); ·Characteristic 4: The shrinkage rate accompanying hardening is sufficiently small; ·Characteristic 5: The visibility of the support sheet Da based on the camera in the picking step is good (the thermosetting resin composition contains a colorant, for example); ·Characteristic 6: The support sheet Dc has sufficient mechanical strength.
[環氧樹脂] 環氧樹脂若為進行硬化而具有接著作用者，則並無特別限定。可使用：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂等二官能環氧樹脂；苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂等。另外，可應用多官能環氧樹脂、縮水甘油胺型環氧樹脂、含雜環的環氧樹脂或脂環式環氧樹脂等普遍已知的樹脂。該些可單獨使用一種，亦可併用兩種以上。 [Epoxy resin] Epoxy resins are not particularly limited as long as they have a bonding function after curing. Bifunctional epoxy resins such as bisphenol A epoxy resin, bisphenol F epoxy resin, and bisphenol S epoxy resin; phenol novolac epoxy resins, cresol novolac epoxy resins, and other novolac epoxy resins can be used. In addition, commonly known resins such as multifunctional epoxy resins, glycidylamine epoxy resins, heterocyclic epoxy resins, or alicyclic epoxy resins can be used. These can be used alone or in combination of two or more.
[硬化劑] 作為硬化劑，例如可列舉酚樹脂、酯化合物、芳香族胺、脂肪族胺及酸酐。其中，自實現高的晶粒剪切強度的觀點而言，較佳為酚樹脂。作為酚樹脂的市售品，例如可列舉：迪愛生（DIC）（股）製造的LF-4871（商品名，BPA酚醛清漆型酚樹脂）、愛沃特（AIR WATER）（股）製造的HE-100C-30（商品名，苯基芳烷基型酚樹脂）、迪愛生（DIC）（股）製造的菲諾萊特（Phenolite）KA及TD系列、三井化學股份有限公司製造的美萊克（Milex）XLC-系列及XL系列（例如美萊克（Milex）XLC-LL）、愛沃特（AIR WATER）（股）製造的HE系列（例如HE100C-30）、明和化成股份有限公司製造的MEHC-7800系列（例如MEHC-7800-4S）、JEF化學（JFE Chemical）股份有限公司製造的JDPP系列。該些可單獨使用一種，亦可併用兩種以上。 [Hardener] Examples of the hardener include phenolic resins, ester compounds, aromatic amines, aliphatic amines, and acid anhydrides. Among them, phenolic resins are preferred from the perspective of achieving high grain shear strength. Examples of commercially available phenolic resins include LF-4871 (trade name, BPA novolac type phenolic resin) manufactured by DIC Co., Ltd., HE-100C-30 (trade name, phenyl aralkyl type phenolic resin) manufactured by Air Water Co., Ltd., Phenolite KA and TD series manufactured by DIC Co., Ltd., Milex XLC-series and XL series (e.g., Milex XLC-LL) manufactured by Mitsui Chemicals, Inc., HE series (e.g., HE100C-30) manufactured by Air Water Co., Ltd., MEHC-7800 series (e.g., MEHC-7800-4S) manufactured by Meiwa Chemicals Co., Ltd., and JDPP series manufactured by JFE Chemical Co., Ltd. These can be used alone or in combination of two or more.
關於環氧樹脂與酚樹脂的調配量，自實現高的晶粒剪切強度的觀點而言，環氧當量與羥基當量的當量比分別較佳為0.6～1.5，更佳為0.7～1.4，進而佳為0.8～1.3。藉由使調配比在上述範圍內，容易將硬化性及流動性雙方達到充分高的水準。Regarding the mixing amount of the epoxy resin and the phenol resin, from the viewpoint of achieving high grain shear strength, the equivalent ratio of the epoxy equivalent to the hydroxyl equivalent is preferably 0.6 to 1.5, more preferably 0.7 to 1.4, and further preferably 0.8 to 1.3. By making the mixing ratio within the above range, it is easy to achieve sufficiently high levels of both hardenability and fluidity.
[彈性體] 作為彈性體，例如可列舉：丙烯酸樹脂、聚酯樹脂、聚醯胺樹脂、聚醯亞胺樹脂、矽酮樹脂、聚丁二烯、丙烯腈、環氧改質聚丁二烯、順丁烯二酸酐改質聚丁二烯、酚改質聚丁二烯及羧基改質丙烯腈。 [Elastomer] Examples of the elastomer include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene, and carboxyl-modified acrylonitrile.
自實現高的晶粒剪切強度的觀點而言，作為彈性體較佳為丙烯酸系樹脂，進而，更佳為將丙烯酸縮水甘油酯或甲基丙烯酸縮水甘油酯等具有環氧基或縮水甘油基作為交聯性官能基的官能性單體聚合而得到的含環氧基的(甲基)丙烯酸共聚物等丙烯酸系樹脂。在丙烯酸系樹脂中，較佳為含環氧基的(甲基)丙烯酸酯共聚物以及含環氧基的丙烯酸橡膠，更佳為含環氧基的丙烯酸橡膠。含環氧基的丙烯酸橡膠是以丙烯酸酯為主要成分，主要由丙烯酸丁酯與丙烯腈等共聚物、丙烯酸乙酯與丙烯腈等共聚物構成的具有環氧基的橡膠。再者，丙烯酸系樹脂不僅可具有環氧基，亦可具有醇性或酚性羥基、羧基等交聯性官能基。From the viewpoint of achieving high grain shear strength, acrylic resins are preferred as elastomers, and more preferred are acrylic resins such as epoxy-containing (meth)acrylic copolymers obtained by polymerizing functional monomers such as glycidyl acrylate or glycidyl methacrylate having epoxy groups or glycidyl groups as crosslinking functional groups. Among acrylic resins, epoxy-containing (meth)acrylate copolymers and epoxy-containing acrylic rubbers are preferred, and epoxy-containing acrylic rubbers are more preferred. Epoxy-containing acrylic rubbers are rubbers having epoxy groups, mainly composed of copolymers of butyl acrylate and acrylonitrile, and copolymers of ethyl acrylate and acrylonitrile, with acrylic esters as the main component. Furthermore, the acrylic resin may have not only an epoxy group but also a cross-linking functional group such as an alcoholic or phenolic hydroxyl group or a carboxyl group.
作為丙烯酸樹脂的市售品，可列舉：長瀨化成（Nagase ChemteX）（股）製造的SG-70L、SG-708-6、WS-023 EK30、SG-280 EK23、SG-P3溶劑變更品（商品名，丙烯酸橡膠，重量平均分子量：80萬，Tg：12℃，溶劑為環己酮）等。Commercially available products of acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 solvent-modified product (trade name, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone) manufactured by Nagase ChemteX Co., Ltd.
自實現高的晶粒剪切強度的觀點而言，丙烯酸樹脂的玻璃轉移溫度（Tg）較佳為-50℃～50℃，更佳為-30℃～30℃。自實現高的晶粒剪切強度的觀點而言，丙烯酸樹脂的重量平均分子量（Mw）較佳為10萬～300萬，更佳為50萬～200萬。此處，Mw是指藉由凝膠滲透層析法（Gel Permeation Chromatography，GPC）測定，使用基於標準聚苯乙烯的標準曲線進行換算而得到的值。再者，藉由使用分子量分佈窄的丙烯酸樹脂，具有能夠形成高彈性的接著劑片的傾向。From the viewpoint of achieving high grain shear strength, the glass transition temperature (Tg) of the acrylic resin is preferably -50°C to 50°C, more preferably -30°C to 30°C. From the viewpoint of achieving high grain shear strength, the weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3,000,000, more preferably 500,000 to 2,000,000. Here, Mw refers to the value obtained by conversion using a standard curve based on standard polystyrene measured by gel permeation chromatography (GPC). Furthermore, by using an acrylic resin with a narrow molecular weight distribution, there is a tendency to form a highly elastic adhesive sheet.
自實現高的晶粒剪切強度的觀點而言，相對於環氧樹脂及環氧樹脂硬化劑的合計100質量份，熱硬化性樹脂組成物中所含的丙烯酸樹脂的量較佳為10質量份～200質量份，更佳為20質量份～100質量份。From the viewpoint of achieving high grain shear strength, the amount of the acrylic resin contained in the thermosetting resin composition is preferably 10 to 200 parts by mass, more preferably 20 to 100 parts by mass, relative to 100 parts by mass of the total of the epoxy resin and the epoxy resin hardener.
[無機填料] 作為無機填料，例如可列舉：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶須、氮化硼及結晶性二氧化矽、非晶性二氧化矽。該些可單獨使用一種，亦可併用兩種以上。 [Inorganic fillers] Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silicon dioxide, and amorphous silicon dioxide. These may be used alone or in combination of two or more.
就實現高的晶粒剪切強度的觀點而言，無機填料的平均粒徑較佳為0.005 μm～1.0 μm，更佳為0.05 μm～0.5 μm。就實現高的晶粒剪切強度的觀點而言，無機填料的表面較佳為經化學修飾。（已補充）適合作為對表面進行化學修飾的材料者可列舉矽烷偶合劑。作為矽烷偶合劑的官能基的種類，例如可列舉乙烯基、丙烯醯基、環氧基、巰基、胺基、二胺基、烷氧基、乙氧基。From the viewpoint of achieving high grain shear strength, the average particle size of the inorganic filler is preferably 0.005 μm to 1.0 μm, and more preferably 0.05 μm to 0.5 μm. From the viewpoint of achieving high grain shear strength, the surface of the inorganic filler is preferably chemically modified. (Added) Suitable materials for chemically modifying the surface include silane coupling agents. Examples of the types of functional groups of the silane coupling agent include vinyl, acryl, epoxy, butyl, amino, diamino, alkoxy, and ethoxy.
就實現高的晶粒剪切強度的觀點而言，相對於熱硬化性樹脂組成物的樹脂成分100質量份，無機填料的含量較佳為20質量份～200質量份，更佳為30質量份～100質量份。From the viewpoint of achieving high grain shear strength, the content of the inorganic filler is preferably 20 to 200 parts by mass, more preferably 30 to 100 parts by mass, based on 100 parts by mass of the resin component of the thermosetting resin composition.
[硬化促進劑] 作為硬化促進劑，例如可列舉：咪唑類及其衍生物、有機磷系化合物、二級胺類、三級胺類、及四級銨鹽。就實現高的晶粒剪切強度的觀點而言，較佳為咪唑系的化合物。作為咪唑類，可列舉2-甲基咪唑、1-苄基-2-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑等。該些可單獨使用一種，亦可併用兩種以上。 [Hardening accelerator] Examples of hardening accelerators include imidazoles and their derivatives, organic phosphorus compounds, diamines, tertiary amines, and quaternary ammonium salts. From the perspective of achieving high grain shear strength, imidazole compounds are preferred. Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These may be used alone or in combination of two or more.
就實現高的晶粒剪切強度的觀點而言，相對於環氧樹脂及環氧樹脂硬化劑的合計100質量份，熱硬化性樹脂組成物的硬化促進劑的含量較佳為0.04質量份～3質量份，更佳為0.04質量份～0.2質量份。From the viewpoint of achieving high grain shear strength, the content of the curing accelerator in the thermosetting resin composition is preferably 0.04 to 3 parts by mass, more preferably 0.04 to 0.2 parts by mass, based on 100 parts by mass of the total of the epoxy resin and the epoxy resin hardener.
＜第二實施方式＞ 對支持片Da的製造方法的第二實施方式進行說明。在第一實施方式中，例示了在（C）步驟中使用多個針的形態，但亦可代替多個針而使用具有平坦的前端面的構件。以下，主要對與第一實施方式的不同點進行說明。 <Second embodiment> The second embodiment of the method for manufacturing the support sheet Da is described. In the first embodiment, a form in which a plurality of needles are used in step (C) is exemplified, but a component having a flat front end surface may be used instead of the plurality of needles. The following mainly describes the differences from the first embodiment.
本實施方式中的黏著層2為由紫外線硬化型黏著劑構成。即，黏著層2具有藉由照射紫外線而黏著性降低的性質。此時，如圖5的（b）所示，藉由切割支持片形成用膜D而得到多個支持片Da之後，對黏著層2照射紫外線。藉此，使黏著層2與支持片Da之間的黏著力降低。紫外線照射後，使用環R以及加熱器H對基材膜1賦予張力，藉此擴大鄰接的支持片Da的間隔（參照圖5的（c）及圖6的（a））。The adhesive layer 2 in this embodiment is composed of an ultraviolet curing adhesive. That is, the adhesive layer 2 has a property that the adhesiveness is reduced by irradiation with ultraviolet rays. At this time, as shown in FIG5 (b), after a plurality of support sheets Da are obtained by cutting the support sheet forming film D, the adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force between the adhesive layer 2 and the support sheet Da is reduced. After the ultraviolet irradiation, the ring R and the heater H are used to apply tension to the base film 1, thereby expanding the interval between the adjacent support sheets Da (refer to FIG5 (c) and FIG6 (a)).
在本實施方式的（C）步驟中，如圖11所示，利用具備具有平坦前端面F的構件P的上推裝置來上推支持片Da。作為上推裝置，例如，可使用法斯福德科技（FASFORD TECHNOLOGY）公司製造的DB-830普拉斯（plus）+（商品名）。再者，可使用圖12的（a）～圖12的（c）所示的三段式上推裝置來上推支持片Da。三段式上推裝置包括第一筒狀構件P1、收容在第一筒狀構件P1中的第二筒狀構件P2、以及收容在第二筒狀構件P2中的構件P。該些的前端面F1、前端面F2、前端面F均平坦，且在第一筒狀構件P1的前端面F1抵接於基材膜1的狀態下成為同一平面（參照圖12的（a））。之後，第二筒狀構件P2自第一筒狀構件P1突出，藉此進一步將支持片Da上推（參照圖12的（b））。接著，構件P自第二筒狀構件P2突出，藉此進一步將支持片Da的中央部上推（參照圖12的（c））。如此以平坦的面將支持片Da自基材膜1側上推，而能夠有效率地使支持片Da的邊緣自黏著層2剝離，藉此能夠實現優異的拾取性。In step (C) of the present embodiment, as shown in FIG11 , a push-up device having a member P having a flat front end face F is used to push up the support sheet Da. As the push-up device, for example, DB-830 plus + (trade name) manufactured by FASFORD TECHNOLOGY can be used. Furthermore, a three-stage push-up device shown in FIG12 (a) to FIG12 (c) can be used to push up the support sheet Da. The three-stage push-up device includes a first cylindrical member P1, a second cylindrical member P2 accommodated in the first cylindrical member P1, and a member P accommodated in the second cylindrical member P2. The front end face F1, the front end face F2, and the front end face F of these are all flat, and become the same plane when the front end face F1 of the first cylindrical member P1 abuts against the substrate film 1 (refer to FIG12 (a)). After that, the second cylindrical member P2 protrudes from the first cylindrical member P1, thereby further pushing up the support sheet Da (refer to (b) of FIG. 12 ). Next, the member P protrudes from the second cylindrical member P2, thereby further pushing up the central portion of the support sheet Da (refer to (c) of FIG. 12 ). In this way, by pushing up the support sheet Da from the side of the substrate film 1 with a flat surface, the edge of the support sheet Da can be efficiently peeled off from the adhesive layer 2, thereby achieving excellent pickup performance.
藉由三段式上推裝置的支持片Da的上推方法並不限於所述方法。例如，首先，在前端面F1、前端面F2、前端面F為同一平面的狀態下，經由基材膜1上推支持片Da。然後，可在使第一筒狀構件P1下降之後，使第二筒狀構件P2下降。根據該方法，能夠用比較低的推力來拾取支持片Da。再者，上推裝置的段數並不限於三段，只要至少兩段即可。即，多段式上推裝置只要具備筒狀構件、及收容於筒狀構件中的柱狀的構件P，且該些獨立地沿上下方向驅動即可。The method of pushing up the support sheet Da by the three-stage push-up device is not limited to the above method. For example, first, the support sheet Da is pushed up through the base film 1 in a state where the front end face F1, the front end face F2, and the front end face F are in the same plane. Then, after the first tubular component P1 is lowered, the second tubular component P2 can be lowered. According to this method, the support sheet Da can be picked up with a relatively low thrust. Furthermore, the number of stages of the push-up device is not limited to three stages, as long as there are at least two stages. That is, the multi-stage push-up device only needs to have a tubular component and a columnar component P housed in the tubular component, and these can be driven independently in the up and down directions.
＜第三實施方式＞ 以下，對支持片Da的製造方法的第三實施方式進行說明。在所述實施方式中，例示了藉由完全切斷支持片形成用膜D而形成支持片Da的情況，但是，亦可在（B）步驟中，對支持片形成用膜D進行半切割後，針對基材膜1藉由冷卻擴展而形成支持片Da。以下，主要說明與所述實施方式的不同點。 <Third embodiment> Hereinafter, a third embodiment of the method for manufacturing the support sheet Da is described. In the above embodiment, the case where the support sheet Da is formed by completely cutting the support sheet forming film D is exemplified, but in step (B), the support sheet forming film D is half-cut and then the support sheet Da is formed by cooling and expanding the base film 1. Hereinafter, the differences from the above embodiment are mainly described.
在將切割環DR貼附於積層膜20後（參照圖5的（a）），如圖13的（a）所示，將切口G形成至支持片形成用膜D的厚度方向的中途。藉此，能夠得到具有被半切割的支持片形成用膜D的積層膜25。切口G例如藉由刀片或雷射來形成即可。將支持片形成用膜D的厚度設為100時，切口G的深度為25～50即可，亦可為30～40。切口G形成為格子狀（參照圖13的（b））。再者，切口G的圖案不限於格子狀，只要是與支持片Da的形狀對應的形態即可。After the cutting ring DR is attached to the laminated film 20 (refer to (a) of FIG. 5 ), as shown in (a) of FIG. 13 , the cut G is formed to the middle of the thickness direction of the support sheet forming film D. In this way, a laminated film 25 having a half-cut support sheet forming film D can be obtained. The cut G can be formed, for example, by a blade or a laser. When the thickness of the support sheet forming film D is set to 100, the depth of the cut G can be 25 to 50, or 30 to 40. The cut G is formed in a grid shape (refer to (b) of FIG. 13 ). Furthermore, the pattern of the cut G is not limited to a grid shape, as long as it is a shape corresponding to the shape of the support sheet Da.
其後，例如藉由在-15℃～0℃的溫度條件下的冷卻擴展，將支持片形成用膜D單片化。藉此，可自支持片形成用膜D獲得多個支持片Da。藉由用環R將基材膜1中的切割環DR的內側區域1a上推，對基材膜1賦予張力即可（參照圖5的（c））。在（B）步驟中，將支持片形成用膜D半切割後，藉由冷卻擴展將支持片形成用膜D單片化，藉此支持片Da的邊緣不進入黏著層2，因此能夠實現優異的拾取性。Thereafter, the support sheet forming film D is singulated by cooling and expanding at a temperature of -15°C to 0°C, for example. In this way, a plurality of support sheets Da can be obtained from the support sheet forming film D. Tension can be applied to the base film 1 by pushing up the inner area 1a of the cutting ring DR in the base film 1 with the ring R (see (c) in FIG. 5 ). In step (B), after the support sheet forming film D is half-cut, the support sheet forming film D is singulated by cooling and expanding, whereby the edge of the support sheet Da does not enter the adhesive layer 2, thereby achieving excellent pickup properties.
以上，詳細地說明了本揭示的實施方式，但本發明並不限定於所述實施方式。例如，在所述第一實施方式中，例示了具有感壓型的黏著層2的積層膜20，但黏著層2亦可為紫外線硬化型。在第三實施方式的黏著層2為紫外線硬化型的情況下，如上所述，支持片Da的邊緣不進入黏著層2，因此即使藉由紫外線照射使黏著層2硬化，亦能夠實現優異的拾取性。The above detailed description of the embodiments of the present disclosure is provided, but the present invention is not limited to the embodiments. For example, in the first embodiment, a laminate film 20 having a pressure-sensitive adhesive layer 2 is exemplified, but the adhesive layer 2 may also be a UV-curable type. In the case where the adhesive layer 2 of the third embodiment is a UV-curable type, as described above, the edge of the support sheet Da does not enter the adhesive layer 2, so even if the adhesive layer 2 is cured by UV irradiation, excellent pickup properties can be achieved.
在所述第二實施方式中，例示了具有紫外線硬化型的黏著層2的積層膜20，但黏著層2亦可為感壓型。再者，感壓型的黏著層可含有具有光反應性的具有碳-碳雙鍵的樹脂，亦可不含有。例如，黏著層可藉由對其規定區域照射紫外線而降低該區域的黏著性，例如，亦可殘存具有光反應性的具有碳-碳雙鍵的樹脂。In the second embodiment, the laminate film 20 having the UV-curable adhesive layer 2 is exemplified, but the adhesive layer 2 may also be a pressure-sensitive adhesive layer. Furthermore, the pressure-sensitive adhesive layer may or may not contain a photoreactive resin having a carbon-carbon double bond. For example, the adhesive layer may reduce the adhesiveness of a predetermined area thereof by irradiating the predetermined area with UV rays, and for example, a photoreactive resin having a carbon-carbon double bond may remain.
在所述實施方式中，如圖3的（b）所示，例示了具備由熱硬化性樹脂層構成的支持片形成用膜D的支持片形成用積層膜20，但支持片形成用積層膜亦可由使熱硬化性樹脂層中的至少一部分硬化而成的層構成。另外，支持片形成用積層膜亦可具備包括熱硬化性樹脂層、及較該熱硬化性樹脂層具有更高剛性的樹脂層或金屬層的多層膜。圖14的（a）所示的支持片形成用積層膜20A具有雙層膜D2（支持片形成用膜），該雙層膜D2具有熱硬化性樹脂層5、及較熱硬化性樹脂層具有更高剛性的樹脂層6。即，在支持片形成用積層膜20A中，在黏著層2與最外面的樹脂層6之間配置有熱硬化性樹脂層5。再者，熱硬化性樹脂層5為由構成第一實施方式的支持片形成用膜D的熱硬化性樹脂組成物構成。樹脂層6的厚度例如為5 μm～100 μm，亦可為10 μm～90 μm或20 μm～80 μm。樹脂層6例如為聚醯亞胺層。In the above-described embodiment, as shown in FIG3(b), the support sheet forming laminated film 20 is exemplified as having a support sheet forming film D composed of a thermosetting resin layer, but the support sheet forming laminated film may be composed of a layer formed by hardening at least a portion of the thermosetting resin layer. In addition, the support sheet forming laminated film may be a multilayer film including a thermosetting resin layer and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer. The support sheet forming laminated film 20A shown in FIG. 14 (a) has a double-layer film D2 (support sheet forming film), and the double-layer film D2 has a thermosetting resin layer 5 and a resin layer 6 having higher rigidity than the thermosetting resin layer. That is, in the support sheet forming laminated film 20A, the thermosetting resin layer 5 is arranged between the adhesive layer 2 and the outermost resin layer 6. The thermosetting resin layer 5 is composed of the thermosetting resin composition constituting the support sheet forming film D of the first embodiment. The thickness of the resin layer 6 is, for example, 5 μm to 100 μm, and may also be 10 μm to 90 μm or 20 μm to 80 μm. The resin layer 6 is, for example, a polyimide layer.
圖14的（b）所示的支持片形成用積層膜20B具有三層膜D3（支持片形成用膜），該三層膜D3包括：較熱硬化性樹脂層具有更高剛性的樹脂層6、及夾持樹脂層6的二層的熱硬化性樹脂層5a、熱硬化性樹脂層5b。在支持片形成用積層膜20B中，在黏著層2的表面上配置有三層膜D3。The support sheet forming laminated film 20B shown in FIG. 14( b ) has a three-layer film D3 (support sheet forming film), which includes a resin layer 6 having higher rigidity than the thermosetting resin layer, and two thermosetting resin layers 5 a and 5 b sandwiching the resin layer 6. In the support sheet forming laminated film 20B, the three-layer film D3 is arranged on the surface of the adhesive layer 2.
雙層膜D2可與第一實施方式同樣，例如，藉由刀片或雷射而被完全切斷，亦可與第三實施方式同樣，在半切割之後藉由冷卻擴展經單片化。圖15的（a）是示意性地表示將雙層膜D2半切割的狀態的剖面圖。如圖15的（a）所示，切斷雙層膜D2的樹脂層6並且將切口G形成至熱硬化性樹脂層5的厚度方向的中途即可。藉此，能夠得到具有經半切割的雙層膜D2的積層膜25A。藉由樹脂層6被單片化而形成多個樹脂片6p。將熱硬化性樹脂層5的厚度設為100時，切口G以10～75（更佳為25～50）的厚度切斷熱硬化性樹脂層5即可。The double-layer film D2 can be completely cut by a blade or laser, as in the first embodiment, or can be singulated by cooling and expansion after half-cutting, as in the third embodiment. FIG. 15 (a) is a cross-sectional view schematically showing a state where the double-layer film D2 is half-cut. As shown in FIG. 15 (a), the resin layer 6 of the double-layer film D2 is cut and the cut G is formed to the middle of the thickness direction of the thermosetting resin layer 5. In this way, a laminated film 25A having a half-cut double-layer film D2 can be obtained. The resin layer 6 is singulated to form a plurality of resin sheets 6p. When the thickness of the thermosetting resin layer 5 is set to 100, the cut G may cut the thermosetting resin layer 5 at a thickness of 10 to 75 (more preferably 25 to 50).
三層膜D3可與第一實施方式及第二實施方式同樣，例如，藉由刀片或雷射而被完全切斷，亦可與第三實施方式同樣，在半切割之後藉由冷卻擴展經單片化。圖15的（b）是示意性地表示將三層膜D3半切割的狀態的剖面圖。如圖15的（b）所示，切斷三層膜D3的熱硬化性樹脂層5a及樹脂層6並且將切口G形成至熱硬化性樹脂層5b的厚度方向的中途即可。藉此，能夠得到具有被半切割的三層膜D3的積層膜25B。熱硬化性樹脂層5a被單片化，藉此形成多個接著劑片5p，樹脂層6被單片化，藉此形成多個樹脂片6p。將熱硬化性樹脂層5b的厚度設為100時，切口G以10～75（更佳為25～50）的厚度切斷熱硬化性樹脂層5b即可。The three-layer film D3 can be completely cut by a blade or laser, for example, in the same manner as in the first and second embodiments, or can be singulated by cooling and expansion after half-cutting, in the same manner as in the third embodiment. FIG15(b) is a cross-sectional view schematically showing a state where the three-layer film D3 is half-cut. As shown in FIG15(b), the thermosetting resin layer 5a and the resin layer 6 of the three-layer film D3 are cut and the cut G is formed to the middle of the thickness direction of the thermosetting resin layer 5b. In this way, a laminated film 25B having the three-layer film D3 that is half-cut can be obtained. The thermosetting resin layer 5a is singulated to form a plurality of adhesive sheets 5p, and the resin layer 6 is singulated to form a plurality of resin sheets 6p. When the thickness of the thermosetting resin layer 5b is set to 100, the cut G can cut the thermosetting resin layer 5b at a thickness of 10 to 75 (preferably 25 to 50).
支持片形成用積層膜20A、支持片形成用積層膜20B包含較熱硬化性樹脂層5具有更高剛性的樹脂層6，藉此即使在藉由切割而被單片化之後不實施熱硬化性樹脂層5的熱硬化處理，亦能夠實現優異的拾取性。The support sheet forming laminated film 20A and the support sheet forming laminated film 20B include the resin layer 6 having higher rigidity than the thermosetting resin layer 5, thereby achieving excellent pickup properties even if the thermosetting resin layer 5 is not subjected to a heat curing treatment after being separated into individual pieces by dicing.
在支持片形成用積層膜20A、支持片形成用積層膜20B中，可採用較熱硬化性樹脂層具有更高剛性的金屬層（例如、銅層或鋁層）來代替樹脂層6。金屬層的厚度例如為5 μm～100 μm，亦可為10 μm～90 μm或20 μm～80 μm。藉由使支持片形成用積層膜20A、支持片形成用積層膜20B包含金屬層，除了優異的拾取性以外，藉由樹脂材料與金屬材料的光學對比度，還能夠在拾取步驟中實現支持片的優異的視認性。再者，在支持片形成用積層膜20A、支持片形成用積層膜20B具有金屬層的情況下，由於金屬的延展性，金屬片（金屬層被單片化而成者）的邊緣容易進入黏著層2。在黏著層2為感壓型的情況下，在單片化步驟與拾取步驟之間不實施藉由紫外線照射使黏著層2硬化的步驟，因此即使是金屬片的邊緣暫時進入黏著層2的狀態下，亦能夠實現優異的拾取性。 [實施例] In the support sheet forming laminated film 20A and the support sheet forming laminated film 20B, a metal layer (for example, a copper layer or an aluminum layer) having higher rigidity than the thermosetting resin layer can be used instead of the resin layer 6. The thickness of the metal layer is, for example, 5 μm to 100 μm, or 10 μm to 90 μm or 20 μm to 80 μm. By making the support sheet forming laminated film 20A and the support sheet forming laminated film 20B include a metal layer, in addition to excellent pickup performance, excellent visibility of the support sheet can be achieved in the pickup step due to the optical contrast between the resin material and the metal material. Furthermore, when the support sheet forming laminated film 20A and the support sheet forming laminated film 20B have a metal layer, the edge of the metal sheet (the metal layer is singulated) easily enters the adhesive layer 2 due to the ductility of the metal. When the adhesive layer 2 is a pressure-sensitive type, the step of hardening the adhesive layer 2 by ultraviolet irradiation is not performed between the singulation step and the pickup step, so even if the edge of the metal sheet temporarily enters the adhesive layer 2, excellent pickup can be achieved. [Example]
以下，藉由實施例對本揭示進行說明，但本發明並不限定於該些實施例。The present disclosure is described below by way of embodiments, but the present invention is not limited to these embodiments.
（清漆A的製備） 使用以下材料製備了支持片形成用膜的清漆A。 ·環氧樹脂1：YDCN-700-10：（商品名、新日鐵住金化學（股）製造，甲酚酚醛清漆型環氧樹脂，25℃下為固體）5.4質量份 ·環氧樹脂2：YDF-8170C：（商品名、新日鐵住金化學（股）製造，液態雙酚F型環氧樹脂，25℃下為液態）16.2質量份 ·酚樹脂（硬化劑）：LF-4871：（商品名、迪愛生（DIC）（股）製造，BPA酚醛清漆型酚樹脂）13.3質量份 ·無機填料：SC2050-HLG：（商品名、（股）雅都瑪（ADMATECHS）製造，二氧化矽填料分散液、平均粒徑0.50 μm）49.8質量份 ·彈性體：SG-P3溶劑變更品（商品名，長瀨化成（Nagase ChemteX）（股）製造，丙烯酸橡膠，重量平均分子量：80萬、Tg：12℃，溶劑為環己酮）14.9質量份 ·偶合劑1：A-189：（商品名，通用電氣（General Electric，GE）東芝（股）製造，γ-巰基丙基三甲氧基矽烷）0.1質量份 ·偶合劑2：A-1160：（商品名，通用電氣（General Electric，GE）東芝（股）製造，γ-脲基丙基三乙氧基矽烷）0.3質量份 ·硬化促進劑：固唑（Curezol）2PZ-CN：（商品名，四國化成工業（股）製造，1-氰基乙基-2-苯基咪唑）0.05質量份 ·溶媒：環己烷 (Preparation of Varnish A) Varnish A for forming a support sheet was prepared using the following materials. ·Epoxy resin 1: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., cresol novolac type epoxy resin, solid at 25°C) 5.4 parts by mass ·Epoxy resin 2: YDF-8170C: (trade name, manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., liquid bisphenol F type epoxy resin, liquid at 25°C) 16.2 parts by mass ·Phenolic resin (hardener): LF-4871: (trade name, manufactured by DIC Co., Ltd., BPA novolac type phenolic resin) 13.3 parts by mass ·Inorganic filler: SC2050-HLG: (trade name, manufactured by ADMATECHS, silica filler dispersion, average particle size 0.50 μm) 49.8 parts by mass ·Elastomer: SG-P3 solvent variant (trade name, manufactured by Nagase ChemteX, acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone) 14.9 parts by mass ·Coupling agent 1: A-189: (trade name, manufactured by General Electric (GE) Toshiba Co., Ltd., γ-butylpropyltrimethoxysilane) 0.1 parts by mass ·Coupling agent 2: A-1160: (trade name, manufactured by General Electric (GE) Electric, GE) manufactured by Toshiba (Co., Ltd., γ-ureidopropyl triethoxysilane) 0.3 parts by mass · Curing accelerator: Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Industries, Ltd., 1-cyanoethyl-2-phenylimidazole) 0.05 parts by mass · Solvent: Cyclohexane
（清漆B的製備） 使用以下材料製備了支持片形成用膜的清漆B。 ·環氧樹脂：YDCN-700-10：（商品名，新日鐵住金化學（股）製造，甲酚酚醛清漆型環氧樹脂，25℃下為固體）13.2質量份 ·酚樹脂（硬化劑）：HE-100C-30：（商品名、愛沃特（AIR WATER）（股）製造、苯基芳烷基型酚樹脂）11.0質量份 ·無機填料：艾羅西爾（Aerosil）R972：（商品名、日本艾羅西爾（Aerosil）（股）製造、二氧化矽、平均粒徑0.016 μm）7.8質量份 ·彈性體：SG-P3溶劑變更品（商品名、長瀨化成（Nagase ChemteX）（股）製造、丙烯酸橡膠、重量平均分子量：80萬、Tg：12℃、溶劑為環己酮）66.4質量份 ·偶合劑1：A-189：（商品名，通用電氣（General Electric，GE）東芝（股）製造，γ-巰基丙基三甲氧基矽烷）0.4質量份 ·偶合劑2：A-1160：（商品名、通用電氣（General Electric，GE）東芝（股）製造，γ-脲基丙基三乙氧基矽烷）1.15質量份 ·硬化促進劑：固唑（Curezol）2PZ-CN：（商品名、四國化成工業（股）製造，1-氰基乙基-2-苯基咪唑）0.03質量份 ·溶媒：環己烷 (Preparation of varnish B) Varnish B for forming a film for a support sheet was prepared using the following materials. · Epoxy resin: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., cresol novolac type epoxy resin, solid at 25°C) 13.2 parts by mass · Phenol resin (hardener): HE-100C-30: (trade name, manufactured by Air Water Co., Ltd., phenyl aralkyl type phenol resin) 11.0 parts by mass · Inorganic filler: Aerosil R972: (trade name, manufactured by Nippon Aerosil Co., Ltd., silicon dioxide, average particle size 0.016 μm) 7.8 parts by mass · Elastomer: SG-P3 solvent variant (trade name, Nagase Chemical Co., Ltd. ChemteX (co., Ltd.), acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone) 66.4 parts by mass · Coupling agent 1: A-189: (trade name, manufactured by General Electric (GE) Toshiba (co., Ltd.), γ-butyl propyl trimethoxy silane) 0.4 parts by mass · Coupling agent 2: A-1160: (trade name, manufactured by General Electric (GE) Toshiba (co., Ltd.), γ-ureidopropyl triethoxy silane) 1.15 parts by mass · Curing accelerator: Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Industries (co., Ltd.), 1-cyanoethyl-2-phenylimidazole) 0.03 parts by mass · Solvent: cyclohexane
＜實施例1A＞ 如上所述，使用環己烷作為溶媒，將清漆A的固體成分比例調整為40質量%。用100目的過濾器過濾清漆A的同時進行真空脫泡。作為塗佈清漆A的膜，準備實施有脫模處理的聚對苯二甲酸乙二酯（PET）膜（厚度38 μm）。將真空脫泡後的清漆A塗佈於PET膜的實施了脫模處理的面上。對塗佈的清漆A以90℃5分鐘、繼而140℃5分鐘的兩階段進行加熱乾燥。如此，在PET膜的表面上製作了B階段狀態（半硬化狀態）的熱硬化性樹脂層A。 <Example 1A> As described above, cyclohexane was used as a solvent, and the solid content ratio of varnish A was adjusted to 40% by mass. The varnish A was filtered with a 100-mesh filter and vacuum degassing was performed. A polyethylene terephthalate (PET) film (thickness 38 μm) subjected to a release treatment was prepared as a film to be coated with the varnish A. The varnish A after vacuum degassing was applied to the surface of the PET film subjected to the release treatment. The coated varnish A was heat-dried in two stages at 90°C for 5 minutes and then at 140°C for 5 minutes. In this way, a thermosetting resin layer A in the B stage state (semi-cured state) was prepared on the surface of the PET film.
按照以下順序製作了具有感壓型黏著層的積層膜。對於黏著劑而言，可藉由溶液聚合法獲得丙烯酸共聚物，所述丙烯酸共聚物使用丙烯酸2-乙基己酯及甲基丙烯酸甲酯作為主要單體，使用丙烯酸羥基乙酯及丙烯酸作為官能基單體。該合成的丙烯酸共聚物的重量平均分子量為40萬，玻璃轉移溫度為-38℃。製備相對於該丙烯酸共聚物100質量份而調配有10質量份多官能異氰酸酯交聯劑（三菱化學股份有限公司製造，商品名麥騰（Mytech） NY730-T）的黏著劑溶液，且在表面脫模處理聚對苯二甲酸乙二酯（厚度25 μm）上以乾燥時的黏著劑厚度為10 μm的方式進行塗佈乾燥。進而，在黏著劑面上層壓由聚丙烯/乙酸乙烯酯/聚丙烯構成的100 μm的聚烯烴基材。將該黏著膜在室溫下放置2周，充分進行老化，藉此獲得切割帶。A laminate film having a pressure-sensitive adhesive layer was prepared in the following order. For the adhesive, an acrylic copolymer was obtained by a solution polymerization method, wherein the acrylic copolymer used 2-ethylhexyl acrylate and methyl methacrylate as main monomers and used hydroxyethyl acrylate and acrylic acid as functional monomers. The synthesized acrylic copolymer had a weight average molecular weight of 400,000 and a glass transition temperature of -38°C. An adhesive solution was prepared in which 10 parts by mass of a multifunctional isocyanate crosslinking agent (manufactured by Mitsubishi Chemical Co., Ltd., trade name Mytech NY730-T) was blended with respect to 100 parts by mass of the acrylic copolymer, and the adhesive solution was applied and dried on a surface release treated polyethylene terephthalate (thickness 25 μm) in such a manner that the adhesive thickness when dried was 10 μm. Furthermore, a 100 μm polyolefin substrate composed of polypropylene/vinyl acetate/polypropylene was laminated on the adhesive surface. The adhesive film was left at room temperature for 2 weeks to fully age, thereby obtaining a dicing tape.
將厚度為50 μm的熱硬化性樹脂層A在110℃下加熱1小時後，在130℃下加熱3小時使其硬化，得到硬化樹脂層A。在70℃加熱板上使用橡膠輥將硬化樹脂層A貼合在所述切割帶的黏著層上。經過該步驟得到支持片形成用膜與切割帶的積層體。The 50 μm thick thermosetting resin layer A was heated at 110°C for 1 hour and then heated at 130°C for 3 hours to cure, thereby obtaining a cured resin layer A. The cured resin layer A was bonded to the adhesive layer of the dicing tape using a rubber roller on a 70°C heating plate. Through this step, a laminate of the support sheet forming film and the dicing tape was obtained.
＜實施例2A＞ 代替將熱硬化性樹脂層A在110℃下加熱1小時後，在130℃下加熱3小時，而是藉由在110℃下加熱2小時使熱硬化性樹脂層A硬化，除此之外與實施例1A同樣地得到支持片形成用膜與切割帶的積層體。 <Example 2A> A laminate of a support sheet forming film and a dicing tape was obtained in the same manner as in Example 1A except that the thermosetting resin layer A was cured by heating at 110°C for 2 hours instead of heating at 130°C for 3 hours after heating at 110°C for 1 hour.
＜實施例3A＞ 使用清漆B代替清漆A而在PET膜的表面上形成熱硬化性樹脂層B，並且在70℃的加熱板上，用橡膠輥將熱硬化性樹脂層B貼合於切割帶的黏著層之後，用橡膠輥將聚醯亞胺膜（厚度25 μm）貼合於熱硬化性樹脂層B。經過該步驟得到支持片形成用膜與切割帶的積層體。 <Example 3A> A thermosetting resin layer B is formed on the surface of a PET film using varnish B instead of varnish A, and after the thermosetting resin layer B is bonded to the adhesive layer of a dicing tape using a rubber roller on a heating plate at 70°C, a polyimide film (thickness 25 μm) is bonded to the thermosetting resin layer B using a rubber roller. Through this step, a laminate of a support sheet forming film and a dicing tape is obtained.
對實施例1A～實施例3A的支持片形成用膜進行拾取性的評價。即，在70℃的條件下在實施例1A～實施例3A的積層體的切割帶上層壓切割環。使用切割機在高度55 μm的條件下將支持片形成用膜單片化。藉此，得到了尺寸為10 mm×10 mm的支持片。之後，用黏晶機在擴展（擴展量：3 mm）的狀態下拾取支持片。作為上推夾具，使用了具有9根針的上推裝置（法斯福德科技（FASFORD TECHNOLOGY）公司製造的DB-830普拉斯（plus）+（商品名）），條件為上推速度10 mm/秒及上推高度350 μm。當針對各實施例、對6個支持片嘗試拾取時，在實施例1A～實施例3A的任何一個中都能夠拾取6個支持片全部。The pick-up property of the support sheet forming film of Example 1A to Example 3A was evaluated. That is, a cutting ring was pressed on the cutting tape of the laminated body of Example 1A to Example 3A at 70°C. The support sheet forming film was singulated at a height of 55 μm using a cutting machine. In this way, a support sheet with a size of 10 mm×10 mm was obtained. After that, the support sheet was picked up in an expanded state (expansion amount: 3 mm) using a die bonding machine. As a push-up fixture, a push-up device with 9 needles (DB-830 Plus+ (trade name) manufactured by FASFORD TECHNOLOGY) was used, and the conditions were a push-up speed of 10 mm/sec and a push-up height of 350 μm. When the six support sheets were tried to be picked up in each embodiment, all the six support sheets were able to be picked up in any of the embodiments 1A to 3A.
＜實施例1B＞ 除了代替感壓型黏著層，使用具有紫外線硬化型黏著層的切割帶以外，與實施例1A同樣地得到支持片形成用膜與切割帶的積層體。 <Example 1B> A laminate of a support sheet forming film and a dicing tape was obtained in the same manner as in Example 1A, except that a dicing tape having a UV-curable adhesive layer was used instead of a pressure-sensitive adhesive layer.
按照以下順序製作了具有紫外線硬化型黏著層的切割帶。以丙烯酸2-乙基己酯83質量份、丙烯酸2-羥基乙酯15質量份、甲基丙烯酸2質量份為原料，溶媒使用乙酸乙酯，藉由溶液自由基聚合得到共聚物。使12質量份2-甲基丙烯醯氧基乙基異氰酸酯與該丙烯酸共聚物反應，合成了具有碳-碳雙鍵的紫外線反應型丙烯酸共聚物。在所述反應中，作為聚合抑制劑使用0.05份氫醌-單甲醚。用GPC測定合成的丙烯酸共聚物的重量平均分子量，結果為30萬～70萬。將如此得到的丙烯酸共聚物、以固體成分換算計為2.0份的作為硬化劑的聚異氰酸酯化合物（日本聚胺基甲酸酯股份有限公司製造，商品名：科羅耐特（Coronate）L）、作為光聚合起始劑的1-羥基環己基苯基酮0.5份混合，製備紫外線硬化型黏著劑溶液。將該紫外線硬化型黏著劑溶液以乾燥後的厚度為10 μm的方式在聚對苯二甲酸乙二酯製的剝離膜（厚度：38 μm）上，進行塗佈及乾燥。然後，在黏著劑層上貼合單面實施了電暈放電處理的聚烯烴製膜（厚度：90 μm）。將得到的積層膜在40℃的恆溫槽中進行72小時老化，得到切割帶。A dicing tape having a UV-curable adhesive layer was prepared in the following order. A copolymer was obtained by solution radical polymerization using 83 parts by mass of 2-ethylhexyl acrylate, 15 parts by mass of 2-hydroxyethyl acrylate, and 2 parts by mass of methacrylic acid as raw materials and ethyl acetate as a solvent. 12 parts by mass of 2-methacryloyloxyethyl isocyanate was reacted with the acrylic copolymer to synthesize a UV-reactive acrylic copolymer having a carbon-carbon double bond. In the reaction, 0.05 parts of hydroquinone-monomethyl ether was used as a polymerization inhibitor. The weight average molecular weight of the synthesized acrylic copolymer was measured by GPC and the result was 300,000 to 700,000. The acrylic copolymer thus obtained, 2.0 parts of a polyisocyanate compound as a curing agent (manufactured by Japan Polyurethane Co., Ltd., trade name: Coronate L) calculated as a solid component, and 0.5 parts of 1-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator were mixed to prepare a UV-curable adhesive solution. The UV-curable adhesive solution was applied and dried on a polyethylene terephthalate release film (thickness: 38 μm) in a manner such that the thickness after drying was 10 μm. Then, a polyolefin film (thickness: 90 μm) with a single side subjected to a corona discharge treatment was attached to the adhesive layer. The obtained laminated film was aged in a constant temperature bath at 40°C for 72 hours to obtain a dicing tape.
＜實施例2B＞ 除了代替感壓型黏著層，使用具有紫外線硬化型黏著層的切割帶以外，與實施例2A同樣地得到支持片形成用膜與切割帶的積層體。 <Example 2B> A laminate of a support sheet forming film and a dicing tape was obtained in the same manner as in Example 2A, except that a dicing tape having a UV-curable adhesive layer was used instead of a pressure-sensitive adhesive layer.
＜實施例3B＞ 除了代替感壓型黏著層，使用具有紫外線硬化型黏著層的切割帶以外，與實施例3A同樣地得到支持片形成用膜與切割帶的積層體。 <Example 3B> A laminate of a support sheet forming film and a dicing tape was obtained in the same manner as in Example 3A, except that a dicing tape having a UV-curable adhesive layer was used instead of a pressure-sensitive adhesive layer.
對實施例1B～實施例3B的支持片形成用膜進行拾取性的評價。即，在70℃的條件下在實施例1B～實施例3B的積層體的切割帶上層壓切割環。使用切割機在高度55 μm的條件下將支持片形成用膜單片化。藉此，得到了尺寸為10 mm×10 mm的支持片。用鹵素燈在80 mW/cm 2、200 mJ/cm 2的條件下自切割帶側向支持片的黏著層照射紫外線。之後，用黏晶機在擴展（擴展量：3 mm）的狀態下拾取支持片。作為上推夾具，使用圖12的（a）～圖12的（c）所示構成（三段式）的具有前端部的上推裝置（法斯福德科技（FASFORD TECHNOLOGY）公司製造的DB-830普拉斯（plus）+（商品名）），條件為上推速度10 mm/秒及上推高度1200 μm。當針對各實施例、對6個支持片嘗試拾取時，在實施例1B～實施例3B的任何一個中都能夠拾取6個支持片全部。 [產業上之可利用性] The pick-up property of the supporting sheet forming film of Examples 1B to 3B was evaluated. That is, a cutting ring was laminated on the dicing tape of the laminated body of Examples 1B to 3B at 70°C. The supporting sheet forming film was singulated at a height of 55 μm using a dicing machine. In this way, a supporting sheet with a size of 10 mm×10 mm was obtained. Ultraviolet rays were irradiated from the dicing tape side to the adhesive layer of the supporting sheet using a halogen lamp at 80 mW/ cm2 and 200 mJ/ cm2 . Thereafter, the supporting sheet was picked up in an expanded state (expansion amount: 3 mm) using a die bonding machine. As the push-up clamp, a push-up device (DB-830 Plus + (trade name) manufactured by FASFORD TECHNOLOGY) having a front end portion and a structure (three-stage) as shown in FIG. 12 (a) to FIG. 12 (c) was used, and the conditions were a push-up speed of 10 mm/sec and a push-up height of 1200 μm. When the six support sheets were tried to be picked up for each embodiment, all of the six support sheets could be picked up in any of Embodiments 1B to 3B. [Industrial Applicability]
根據本揭示，提供一種支持片的製造方法，其能夠有效率地製造具有支石墓結構的半導體裝置的製造中所使用的支持片，可有助於半導體裝置的生產效率的提高。另外，根據本揭示，提供一種使用所述支持片來有效率地製造具有支石墓結構的半導體裝置的方法。According to the present disclosure, a method for manufacturing a support sheet is provided, which can efficiently manufacture a support sheet used in manufacturing a semiconductor device having a dolmen structure, and can contribute to improving the production efficiency of the semiconductor device. In addition, according to the present disclosure, a method for efficiently manufacturing a semiconductor device having a dolmen structure using the support sheet is provided.
1:基材膜 1a:內側區域 2:黏著層 2a:周緣區域 3:覆蓋膜 5、5a、5b:熱硬化性樹脂層 5p:接著劑片 6:樹脂層 6p:樹脂片 10:基板 20、20A、20B:支持片形成用積層膜（積層膜） 25、25A、25B:積層膜 30:結構體 50:密封材 100:半導體裝置 C:吸附夾頭 D:支持片形成用膜 D2:雙層膜（支持片形成用膜） D3:三層膜（支持片形成用膜） Da:支持片 Dc:支持片（硬化物） DR:切割環 F、F1、F2:前端面 f1:第一面 f2:第二面 G:切口 H:加熱器 P:構件 P1:第一筒狀構件 P2:第二筒狀構件 N:針 R:環 T1:第一晶片（晶片） T2:第二晶片（晶片） T3、T4:晶片 T1c:接著劑片/接著劑層 T2a:帶接著劑片的晶片 Ta:接著劑片 Tc:接著劑片（硬化物） w:導線 1: Base film 1a: Inner area 2: Adhesive layer 2a: Peripheral area 3: Cover film 5, 5a, 5b: Thermosetting resin layer 5p: Adhesive sheet 6: Resin layer 6p: Resin sheet 10: Substrate 20, 20A, 20B: Laminated film for supporting sheet formation (laminated film) 25, 25A, 25B: Laminated film 30: Structure 50: Sealing material 100: Semiconductor device C: Adsorption chuck D: Supporting sheet forming film D2: Double-layer film (supporting sheet forming film) D3: Tri-layer film (supporting sheet forming film) Da: Supporting sheet Dc: Supporting sheet (hardened material) DR: cutting ring F, F1, F2: front end face f1: first face f2: second face G: cut H: heater P: component P1: first cylindrical component P2: second cylindrical component N: needle R: ring T1: first chip (chip) T2: second chip (chip) T3, T4: chip T1c: adhesive sheet/adhesive layer T2a: chip with adhesive sheet Ta: adhesive sheet Tc: adhesive sheet (hardened material) w: wire
圖1是示意性地表示本揭示的半導體裝置的一例的剖面圖。 圖2的（a）及圖2的（b）是示意性地表示第一晶片與多個支持片的位置關係的例子的平面圖。 圖3的（a）是示意性地表示支持片形成用積層膜的一例的平面圖，圖3的（b）是圖3的（a）的b-b線處的剖面圖。 圖4是示意性地表示貼合黏著層與支持片形成用膜的步驟的剖面圖。 圖5的（a）是示意性地表示將切割環貼附到黏著層的周緣區域的狀態的的剖面圖，圖5的（b）是示意性地表示支持片形成用膜經單片化的狀態的剖面圖，圖5的（c）是示意性地表示藉由擴展而使鄰接的支持片的間隔變寬的狀態的剖面圖。 圖6的（a）是示意性地表示藉由加熱器的吹風來加熱基材膜的內側區域的情況的剖面圖，圖6的（b）是示意性地表示在用多個針將支持片上推的狀態下拾取支持片的情況的剖面圖。 圖7是示意性地表示用多個針自基材膜側上推支持片的情況的剖面圖。 圖8是示意性地表示在基板上且為第一晶片的周圍配置多個支持片的狀態的剖面圖。 圖9是示意性地表示帶接著劑片的晶片的一例的剖面圖。 圖10是示意性地表示形成在基板上的支石墓結構的剖面圖。 圖11是示意性地表示在用具有平坦的前端面的構件將支持片上推的狀態下拾取支持片的情況的剖面圖。 圖12的（a）～圖12的（c）是示意性地表示藉由多段式的上推裝置上推支持片，從而支持片的邊緣自黏著層剝離的情況的剖面圖。 圖13的（a）是示意性地表示將支持片形成用膜半切割的狀態的剖面圖，圖13的（b）是示意性地表示經半切割的支持片形成用膜的一例的平面圖。 圖14的（a）及圖14的（b）是分別示意性地表示支持片形成用積層膜的其他實施方式的剖面圖。 圖15的（a）是示意性地表示將圖14的（a）所示的雙層膜半切割的狀態的剖面圖，圖15的（b）是示意性地表示將圖14的（b）所示的三層膜半切割的狀態的剖面圖。 FIG1 is a cross-sectional view schematically showing an example of a semiconductor device disclosed herein. FIG2 (a) and FIG2 (b) are plan views schematically showing an example of the positional relationship between a first chip and a plurality of support sheets. FIG3 (a) is a plan view schematically showing an example of a laminated film for forming a support sheet, and FIG3 (b) is a cross-sectional view taken along line b-b of FIG3 (a). FIG4 is a cross-sectional view schematically showing a step of bonding an adhesive layer and a film for forming a support sheet. FIG. 5 (a) is a cross-sectional view schematically showing a state where a dicing ring is attached to the peripheral area of an adhesive layer, FIG. 5 (b) is a cross-sectional view schematically showing a state where a film for forming a support sheet is singulated, and FIG. 5 (c) is a cross-sectional view schematically showing a state where the interval between adjacent support sheets is widened by expansion. FIG. 6 (a) is a cross-sectional view schematically showing a state where the inner area of a base film is heated by blowing air from a heater, and FIG. 6 (b) is a cross-sectional view schematically showing a state where a support sheet is picked up while being pushed up by a plurality of needles. FIG. 7 is a cross-sectional view schematically showing a state where a support sheet is pushed up from the side of a base film by a plurality of needles. FIG8 is a cross-sectional view schematically showing a state where a plurality of support sheets are arranged around a first chip on a substrate. FIG9 is a cross-sectional view schematically showing an example of a chip with a bonding agent sheet. FIG10 is a cross-sectional view schematically showing a dolmen structure formed on a substrate. FIG11 is a cross-sectional view schematically showing a state where a support sheet is picked up while being pushed up by a member having a flat front end surface. FIG12 (a) to FIG12 (c) are cross-sectional views schematically showing a state where a support sheet is pushed up by a multi-stage push-up device, thereby peeling off the edge of the support sheet from the adhesive layer. FIG13 (a) is a cross-sectional view schematically showing a state where a support sheet forming film is half-cut, and FIG13 (b) is a plan view schematically showing an example of a half-cut support sheet forming film. FIG. 14 (a) and FIG. 14 (b) are cross-sectional views schematically showing other embodiments of the laminated film for supporting sheet formation. FIG. 15 (a) is a cross-sectional view schematically showing a state where the double-layer film shown in FIG. 14 (a) is half-cut, and FIG. 15 (b) is a cross-sectional view schematically showing a state where the triple-layer film shown in FIG. 14 (b) is half-cut.
1:基材膜 1: Base film
2:黏著層 2: Adhesive layer
C:吸附夾頭 C: Suction chuck
Da:支持片 Da: Support film
N:針 N: Needle
Claims (8)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-084161 | 2019-04-25 | ||
| JP2019-084164 | 2019-04-25 |
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| TW202420557A true TW202420557A (en) | 2024-05-16 |
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