TW202100978A

TW202100978A - Automatic optical detection mechanism for detecting silicon wafer defects and method thereof

Info

Publication number: TW202100978A
Application number: TW108120920A
Authority: TW
Inventors: 黃冠豪; 駱玉盛
Original assignee: 華矽創新股份有限公司
Priority date: 2019-06-17
Filing date: 2019-06-17
Publication date: 2021-01-01
Also published as: TWI691715B

Abstract

An automatic optical detection mechanism for detecting silicon wafer defects and method thereof are provided. The detection mechanism includes a base, an illumination unit, an image capturing unit, and an image identification unit. A target silicon wafer is placed on the base. The illumination unit provides the light needed for illuminating the silicon wafer, and the image capturing unit captures a target image from the surface of the silicon wafer. The image identification unit receives the target image and identifies the abnormal parts in the image as defects. Therefore, the present invention automatically detects the defects of the silicon wafer.

Description

檢測矽晶圓缺陷的自動光學檢測機構及方法Automatic optical inspection mechanism and method for detecting defects of silicon wafer

本發明係關於一種檢測矽晶圓缺陷技術，尤指一種檢測矽晶圓缺陷的自動光學檢測機構及方法。The invention relates to a technology for detecting defects in silicon wafers, in particular to an automatic optical inspection mechanism and method for detecting defects in silicon wafers.

矽晶圓是由矽棒經過切割加工所製成的圓形晶片，而矽棒在切割加工為矽晶圓後，表面會有大量的殘留物，即便透過拋光和清洗的製程，仍不免會在矽晶圓表面有如是刮傷或水漬的缺陷(Defect)存在，因而必須對矽晶圓表面進行缺陷檢測，以確保矽晶圓的出貨品質。Silicon wafers are round wafers made by cutting silicon rods. After the silicon rods are cut into silicon wafers, there will be a lot of residues on the surface. Even through the polishing and cleaning processes, they will Defects such as scratches or water stains exist on the surface of the silicon wafer. Therefore, it is necessary to perform defect inspection on the surface of the silicon wafer to ensure the quality of the shipment of the silicon wafer.

不論是矽晶圓製造廠或是再生矽晶圓廠，目前針對矽晶圓表面檢測缺陷的方式仍為人工檢測，主要是藉由檢測人員的經驗對矽晶圓表面的缺陷進行檢測，然而利用人工檢測矽晶圓表面缺陷的方式容易誤判，矽晶圓出廠時因人工未發現缺陷而仍存在瑕疵的問題，導致出廠品質良莠不齊。Whether it is a silicon wafer manufacturing plant or a recycled silicon wafer plant, the current method of detecting defects on the surface of silicon wafers is still manual inspection, mainly based on the experience of inspectors to detect defects on the surface of silicon wafers. The method of manually detecting surface defects of silicon wafers is easy to be misjudged. When silicon wafers are shipped from the factory, there are still defects due to no defects found manually, resulting in uneven quality of the factory.

前述以人工檢測矽晶面表面缺陷的問題，特別是矽晶圓表面有刮傷時，即便檢測人員能發現刮傷之缺陷存在，然而也僅能量得刮傷長度，並無法判別刮傷的深度，如以研磨拋光的方式去除缺陷，也是以經驗預估移除量而有難以精準的問題，有可能發生研磨拋光的深度不夠，導致缺陷去除無法一次完成，因而產生矽晶圓製程之效率無法有效提昇的問題。除此之外，亦有可能因研磨拋光的深度太多，而削減了不必要的矽晶圓厚度，浪費矽晶圓材料。The aforementioned problem of manual inspection of silicon crystal surface defects, especially when there is a scratch on the surface of the silicon wafer, even if the inspector can find the defect of the scratch, but the energy is only the length of the scratch, and the depth of the scratch cannot be judged. If defects are removed by grinding and polishing, it is also difficult to accurately estimate the amount of removal based on experience. It may happen that the depth of grinding and polishing is not enough, resulting in defect removal that cannot be completed at one time, resulting in an inefficient silicon wafer process The problem of effective promotion. In addition, it is also possible that the depth of the grinding and polishing is too much, which reduces unnecessary silicon wafer thickness and wastes silicon wafer material.

為解決上述課題，本發明提供一種檢測矽晶圓缺陷的自動光學檢測機構及方法，主要係在矽晶圓表面以自動光學檢測技術檢測缺陷，有別於以人工檢測而具有較佳之準確性。To solve the above-mentioned problems, the present invention provides an automatic optical inspection mechanism and method for detecting silicon wafer defects. The automatic optical inspection technology detects defects on the surface of the silicon wafer, which has better accuracy than manual inspection.

本發明之一項實施例提供一種檢測矽晶圓缺陷的自動光學檢測機構，其包含一基座、一照光單元、一影像擷取單元，以及一影像判斷單元，基座可供待檢測缺陷之矽晶圓設置，照光單元對應於基座並提供矽晶圓之照光，影像擷取單元與照光單元設置於矽晶圓之同一面，以擷取矽晶圓之表面在有照光單元照光下之一待測影像；影像判斷單元電性連接影像擷取單元，以影像判斷單元接收待測影像後，判斷待測影像是否存在影像差異而有缺陷。An embodiment of the present invention provides an automatic optical inspection mechanism for detecting defects in silicon wafers, which includes a base, a lighting unit, an image capturing unit, and an image judging unit. The base can be used for detecting defects. The silicon wafer is arranged. The light unit corresponds to the base and provides light for the silicon wafer. The image capture unit and the light unit are arranged on the same surface of the silicon wafer to capture the surface of the silicon wafer under the light of the light unit. An image to be tested; the image determining unit is electrically connected to the image capturing unit, and after the image determining unit receives the image to be tested, it determines whether the image to be tested has an image difference and is defective.

其中，進一步包含一水平位移單元與基座連接，而控制基座於水平方向位移。Wherein, it further includes a horizontal displacement unit connected to the base, and the base is controlled to move in the horizontal direction.

其中，進一步包含一轉向單元，其與基座及水平位移單元連接，讓基座上之矽晶圓可傾斜至不同角度供影像擷取單元擷取待測矽晶圓的不同角度影像。Among them, a steering unit is further included, which is connected with the base and the horizontal displacement unit, so that the silicon wafer on the base can be tilted to different angles for the image capturing unit to capture images of different angles of the silicon wafer to be tested.

其中，照光單元照光時之光線亮度大於10000流明。Among them, the brightness of the light when the illuminating unit illuminates is greater than 10,000 lumens.

其中，進一步包括一缺陷影像資料庫，缺陷影像資料庫電性連接影像判斷單元，並儲存影像判斷單元複數對應矽晶圓的缺陷影像，以供影像判斷單元進行矽晶圓缺陷判斷。Among them, it further includes a defect image database, which is electrically connected to the image judgment unit, and stores a plurality of defect images corresponding to the silicon wafer by the image judgment unit for the image judgment unit to judge the silicon wafer defect.

其中，進一步包括一缺陷去除單元，以去除所述缺陷。Wherein, it further includes a defect removing unit to remove the defect.

本發明之一項實施例提供一種檢測矽晶圓缺陷的自動光學檢測方法，其步驟係將待檢測缺陷之矽晶圓設置在基座上，以照光單元在基座上方提供矽晶圓之照光，使矽晶圓表面具有足以突顯缺陷的亮度，而矽晶圓之表面在有照光下，以影像擷取單元在基座上方擷取矽晶圓表面之待測影像，以影像判斷單元接收待測影像，並以影像判斷單元判斷待測影像中有影像異常處為缺陷。An embodiment of the present invention provides an automatic optical inspection method for detecting defects of silicon wafers, the steps of which are to set the silicon wafers to be inspected defects on a susceptor, and an illumination unit to provide illumination of the silicon wafers above the susceptor , So that the surface of the silicon wafer has sufficient brightness to highlight defects, and the surface of the silicon wafer is exposed to light. The image capturing unit is used to capture the image to be measured on the surface of the silicon wafer above the base, and the image determining unit receives the The image is measured, and the image judging unit judges that an abnormal image in the image to be measured is a defect.

其中，影像擷取單元在基座上方的位置固定，基座可於水平方向沿一第一軸向和一第二軸向位移，第一軸向垂直於第二軸向，以基座帶動待測之矽晶圓沿第一軸向和第二軸向水平位移，並由影像擷取單元分段擷取待測之矽晶圓之局部影像後，由影像判斷單元整合並還原為待測影像。The position of the image capturing unit above the base is fixed, and the base can be displaced in a horizontal direction along a first axis and a second axis. The first axis is perpendicular to the second axis, and the base drives the standby The measured silicon wafer is displaced horizontally along the first axis and the second axis, and the image capturing unit captures the partial images of the silicon wafer to be tested in sections, and the image determining unit integrates and restores the image to be tested .

其中，基座具有一平行水平方向之轉動軸向，基座以轉動軸向為軸心而可傾斜至不同角度，於所述缺陷具有深度時，調整所述矽晶圓被該影像擷取單元擷取影像之角度，以擷取所述具有深度之缺陷在不同角度時之複數缺陷影像，且以該影像判斷單元依據該複數缺陷影像判斷所述缺陷之實際深度。Wherein, the base has a rotation axis parallel to the horizontal direction, and the base can be tilted to different angles with the rotation axis as the axis. When the defect has a depth, the silicon wafer is adjusted to be used by the image capturing unit The angle of the captured image is used to capture multiple defect images of the defect with depth at different angles, and the image determining unit determines the actual depth of the defect based on the multiple defect images.

其中，以缺陷影像資料庫電性連接影像判斷單元，以儲存待測影像在影像判斷單元判斷為有缺陷之缺陷影像，以供影像判斷單元進行矽晶圓缺陷判斷。Wherein, the defect image database is electrically connected to the image judging unit to store the defect images judged to be defective by the image judging unit for the image to be tested, so that the image judging unit can judge the silicon wafer defect.

其中，一前述缺陷影像產生時，該缺陷影像資料庫可對該缺陷影像分類儲存，該影像判斷單元依所述缺陷影像之分類而自動媒合並比對出所屬的缺陷類型。Wherein, when a defect image is generated, the defect image database can classify and store the defect image, and the image judging unit automatically mediates and compares the defect type according to the classification of the defect image.

其中，進一步以一缺陷去除單元依所述缺陷類型，缺陷去除單元是以研磨、拋光或蝕刻之至少一者去除所述缺陷。Wherein, a defect removal unit is further used according to the defect type, and the defect removal unit removes the defect by at least one of grinding, polishing or etching.

藉此，當矽晶圓表面有缺陷存在時，可透過本發明之自動光學檢測機構進行缺陷之檢測，是以影像判斷單元接收待測影像後，判斷待測影像是否存在影像差異，即可精準地判斷在矽晶圓表面是否有缺陷，藉以解決矽晶圓出廠時因人工未發現缺陷而仍存在瑕疵的問題，以確保矽晶圓出廠時無缺陷的品質一致。Thereby, when there is a defect on the surface of the silicon wafer, the defect can be detected by the automatic optical inspection mechanism of the present invention. After the image judging unit receives the image to be tested, it can be accurately judged whether there is an image difference in the image to be tested. To determine whether there are defects on the surface of the silicon wafers, so as to solve the problem that the silicon wafers still have defects due to no defects found manually when they leave the factory, so as to ensure the quality of the silicon wafers without defects.

此外，當矽晶圓表面有刮傷時，因待檢測缺陷之矽晶圓可隨基座傾斜至不同角度，而可調整擷取單元擷取影像之角度，進而依據所擷取不同角度的複數缺陷影像判斷所述缺陷之實際深度。並且，在刮傷的實際深度得知後，缺陷去除單元可依據所知深度而一次去除所述缺陷，藉以達到矽晶圓製程之效率能有效提昇之功效。In addition, when there is a scratch on the surface of the silicon wafer, the silicon wafer to be inspected can be tilted to different angles with the base, and the angle of the image captured by the capturing unit can be adjusted, and then according to the number of different angles captured The defect image determines the actual depth of the defect. Moreover, after the actual depth of the scratch is known, the defect removal unit can remove the defects at a time according to the known depth, so as to achieve the effect of effectively improving the efficiency of the silicon wafer process.

再者，藉由缺陷影像資料庫儲存被影像判斷單元判斷為有缺陷之缺陷影像，並且對所獲得的缺陷影像進行分類與儲存，待所獲得的缺陷影像足夠且完整時，影像判斷單元即可類似以人工智能的方式，依所述缺陷影像之分類而自動媒合並比對出所屬的缺陷類型，以達到精準地判斷出缺陷類型且建議較佳的去除方式的功效。Furthermore, the defect image database is used to store the defect images judged to be defective by the image judgment unit, and the obtained defect images are classified and stored. When the obtained defect images are sufficient and complete, the image judgment unit can Similar to the way of artificial intelligence, according to the classification of the defect images, the defect type is automatically merged and compared to achieve the effect of accurately determining the defect type and suggesting a better removal method.

為便於說明本發明於上述發明內容一欄中所表示的中心思想，茲以具體實施例表達。實施例中各種不同物件係按適於說明之比例、尺寸、變形量或位移量而描繪，而非按實際元件的比例予以繪製，合先敘明。In order to facilitate the description of the central idea of the present invention expressed in the column of the above-mentioned summary of the invention, specific embodiments are used to express it. The various objects in the embodiment are drawn according to the proportion, size, deformation or displacement suitable for explanation, rather than drawn according to the proportion of the actual element, which will be described first.

請參閱圖1至圖4所示，本發明提供一種檢測矽晶圓缺陷的自動光學檢測機構及方法，自動光學檢測機構100包含一基座10、一照光單元20、一影像擷取單元30，以及一影像判斷單元40，於本實施例中進一步包括一缺陷影像資料庫50以及一缺陷去除單元60，其中：1 to 4, the present invention provides an automatic optical inspection mechanism and method for detecting silicon wafer defects. The automatic optical inspection mechanism 100 includes a base 10, a lighting unit 20, and an image capturing unit 30. And an image judging unit 40, in this embodiment, further includes a defect image database 50 and a defect removal unit 60, wherein:

所述基座10，係供待檢測缺陷之矽晶圓200設置。於本實施例中，基座10是連接在一水平位移單元11，此水平位移單元11於本實施例中是設在一底座12上，且於水平方向沿一第一軸向X和一第二軸向Y位移，以水平位移單元11控制基座10於水平方向位移，其中的第一軸向X和第二軸向Y於水平方向是呈垂直(如圖3所示)。本實施例中並包含一轉向單元13，此轉向單元13是與基座10及水平位移單元11連接，基座10除了可由水平位移單元11而沿第一軸向X和第二軸向Y水平位移之外，也能藉由轉向單元13讓基座10上之矽晶圓200可傾斜至不同角度。The base 10 is provided for the silicon wafer 200 to be inspected for defects. In this embodiment, the base 10 is connected to a horizontal displacement unit 11. The horizontal displacement unit 11 is arranged on a base 12 in this embodiment and is horizontally along a first axis X and a first axis X and a second axis. The second axis Y is displaced, and the horizontal displacement unit 11 controls the displacement of the base 10 in the horizontal direction, wherein the first axis X and the second axis Y are vertical to the horizontal direction (as shown in FIG. 3). This embodiment also includes a steering unit 13, which is connected to the base 10 and the horizontal displacement unit 11. The base 10 can be horizontally horizontal along the first axis X and the second axis Y except for the horizontal displacement unit 11. In addition to displacement, the steering unit 13 can also allow the silicon wafer 200 on the base 10 to tilt to different angles.

所述照光單元20，其對應於基座10而設，以提供位在基座10上之矽晶圓200之照光。於本實施例中，所述照光單元20於照光時之光線L亮度大於10000流明，而以50000流明為較佳。照光單元20於較佳實施例中可為高功率發光二極體(High Power LED)。所述照光單元20於本實施例中的數量有二，二照光單元20是設置在基座10相對的兩側，且對基座10上之矽晶圓200照光的角度分別呈45度角。The illumination unit 20 is corresponding to the base 10 to provide light for the silicon wafer 200 on the base 10. In this embodiment, the brightness of the light L of the illumination unit 20 during illumination is greater than 10,000 lumens, and 50,000 lumens is preferred. The lighting unit 20 may be a high power light emitting diode (High Power LED) in a preferred embodiment. The number of the light-emitting units 20 in this embodiment is two. The two light-emitting units 20 are arranged on opposite sides of the susceptor 10, and the angles of illuminating the silicon wafer 200 on the susceptor 10 are respectively 45 degrees.

所述影像擷取單元30，其與照光單元20設置於矽晶圓200的同一面，矽晶圓200之表面在有照光單元20之照光下，可由影像擷取單元30擷取一待測影像31(以虛線C表示影像擷取方向)。所述影像擷取單元30，可為CCD攝像機、CMOS攝像機、或功能相似的影像擷取裝置，而於本實施例中係以CCD攝像機為較佳實施例。由於本實施例設有轉向單元13，當基座10上之矽晶圓200隨轉向單元13傾斜至不同角度時，影像擷取單元30可擷取矽晶圓200在不同角度下的影像。The image capturing unit 30 is disposed on the same surface of the silicon wafer 200 as the illumination unit 20. The surface of the silicon wafer 200 is illuminated by the illumination unit 20, and an image to be measured can be captured by the image capturing unit 30 31 (the dashed line C represents the image capturing direction). The image capturing unit 30 may be a CCD camera, a CMOS camera, or an image capturing device with similar functions. In this embodiment, a CCD camera is a preferred embodiment. Since the steering unit 13 is provided in this embodiment, when the silicon wafer 200 on the base 10 is tilted to different angles with the steering unit 13, the image capturing unit 30 can capture images of the silicon wafer 200 at different angles.

所述影像判斷單元40，其電性連接影像擷取單元30，在影像擷取單元30擷取到待測影像31後，由影像判斷單元40接收待測影像31，並且，由影像判斷單元40對該待測影像31判斷是否存在影像差異而有缺陷。所述影像判斷單元40，係由電腦裝置之中央處理單元所執行。The image determining unit 40 is electrically connected to the image capturing unit 30. After the image capturing unit 30 captures the image to be tested 31, the image determining unit 40 receives the image to be tested 31, and the image determining unit 40 The image to be tested 31 is judged whether there are image differences and defects. The image determination unit 40 is executed by the central processing unit of the computer device.

所述缺陷影像資料庫50，其連接影像判斷單元40，並儲存影像判斷單元40複數對應矽晶圓200的缺陷影像，此述的缺陷影像指的是待測影像31被影像判斷單元40判斷有缺陷之部位的影像，這些缺陷影像是被儲存在缺陷影像資料庫50，以供影像判斷單元40進行矽晶圓200缺陷判斷。The defect image database 50 is connected to the image judging unit 40, and stores a plurality of defect images corresponding to the silicon wafer 200 by the image judging unit 40. The defect image mentioned here refers to the image 31 to be tested as judged by the image judging unit 40. Images of defective parts are stored in the defect image database 50 for the image judging unit 40 to judge the defects of the silicon wafer 200.

所述缺陷去除單元60，係用以去除所述矽晶圓200上之缺陷，可為研磨機、拋光機以及蝕刻機中至少一者或兩者以上的組合(圖中未示)。其中，研磨機對矽晶圓200之表面進行研磨時的去除量較大，拋光機對矽晶圓200之表面進行研磨時的去除量較小，而蝕刻機則是對矽晶圓200之表面進行微量的去除。The defect removal unit 60 is used to remove defects on the silicon wafer 200, and can be at least one of a grinder, a polisher, and an etching machine or a combination of two or more (not shown in the figure). Among them, the polishing machine has a large amount of removal when polishing the surface of the silicon wafer 200, the polishing machine has a small amount of removal when polishing the surface of the silicon wafer 200, and the etching machine is used for the surface of the silicon wafer 200. Perform a small amount of removal.

就上述檢測矽晶圓缺陷的自動光學檢測機構100，於本實施例中並說明其檢測方法，在於檢測缺陷矽晶圓200之缺陷時，是將待檢測缺陷之矽晶圓200設置在基座10上，並以照光單元20在基座10上方提供矽晶圓200之照光，使矽晶圓200的表面具有足以突顯缺陷的亮度，矽晶圓200的表面在有照光單元20的照光之下，以影像擷取單元30在基座10上方擷取矽晶圓200表面之待測影像31，並以影像判斷單元40接收待測影像31之後，判斷待測影像31中有影像異常處為缺陷。而於本實施例中，照光單元20以50000流明之高亮度光線L對矽晶圓200表面進行照光。Regarding the above-mentioned automatic optical inspection mechanism 100 for detecting defects in silicon wafers, in this embodiment, the inspection method is described. When detecting defects in the defective silicon wafer 200, the silicon wafer 200 to be inspected is set on the base. 10, and the illuminating unit 20 is used to illuminate the silicon wafer 200 above the base 10, so that the surface of the silicon wafer 200 has sufficient brightness to highlight defects, and the surface of the silicon wafer 200 is under the illumination of the illuminating unit 20 , After the image capturing unit 30 captures the image to be tested 31 on the surface of the silicon wafer 200 above the base 10, and the image determining unit 40 receives the image 31 to be tested, it is determined that the image to be tested 31 has an abnormal image as a defect . In this embodiment, the illuminating unit 20 illuminates the surface of the silicon wafer 200 with a high-brightness light L of 50,000 lumens.

在本實施例中，矽晶圓200的尺寸比影像擷取單元30一次可擷取的影像範圍大，所以本實施例之影像擷取單元30，其在基座10上方的位置固定，所以在進行矽晶圓200之缺陷檢測時，本實施例之方法是由矽晶圓200隨基座10在水平位移單元11上依第一軸向X和第二軸向Y而沿一路徑P位移(如圖3所示)，當矽晶圓200沿路徑P位移的過程中，便由影像擷取單元30分段擷取矽晶圓200之局部影像，再由影像判斷單元40整合並還原為待測影像31。其中，待測影像31在經影像判斷單元40判斷之後，包含缺陷影像D1和缺陷影像D2，其中的缺陷影像D1為矽晶圓200上的刮傷201，而缺陷影像D2為矽晶圓200表面的水漬。In this embodiment, the size of the silicon wafer 200 is larger than the image range that the image capturing unit 30 can capture at a time. Therefore, the image capturing unit 30 of this embodiment is fixed in position above the base 10, so When performing defect detection of the silicon wafer 200, the method of this embodiment is that the silicon wafer 200 is displaced along a path P along the first axis X and the second axis Y on the horizontal displacement unit 11 along with the base 10 ( As shown in FIG. 3), when the silicon wafer 200 is displaced along the path P, the image capturing unit 30 captures the partial images of the silicon wafer 200 in segments, and the image determining unit 40 integrates and restores测影31。 31. The image to be tested 31, after being judged by the image judging unit 40, includes a defect image D1 and a defect image D2. The defect image D1 is the scratch 201 on the silicon wafer 200, and the defect image D2 is the surface of the silicon wafer 200 Water stains.

所述缺陷影像D1，其具有一定的深度，本實施例之檢測方法中，基座10是連接轉向單元13，而轉向單元13具有一平行該水平方向之轉動軸向A，基座10藉由轉向單元13以轉動軸向A為軸心而可傾斜至不同角度。如圖4所示，矽晶圓200上之刮傷201沿深度方向是往側向傾斜，如以影像擷取單元30正對以擷取刮傷201，必然無法測得真實的深度。於本實施例之檢測方法中，是由轉向單元13傾斜以調整矽晶圓200被影像擷取單元30擷取影像之角度藉此可在不同角度時(如圖4所示)擷取複數刮傷201之缺陷影像D1，並將此複數缺陷影像D1影像判斷單元40接收後，由影像判斷單元40依據複數缺陷影像D1進行運算，以判斷刮傷201之實際深度。The defect image D1 has a certain depth. In the detection method of this embodiment, the base 10 is connected to the steering unit 13, and the steering unit 13 has a rotation axis A parallel to the horizontal direction. The steering unit 13 can be tilted to different angles with the rotation axis A as the axis. As shown in FIG. 4, the scratch 201 on the silicon wafer 200 is inclined sideways along the depth direction. If the image capturing unit 30 is used to capture the scratch 201, the true depth cannot be measured. In the inspection method of this embodiment, the steering unit 13 is tilted to adjust the angle at which the silicon wafer 200 is captured by the image capturing unit 30 so that multiple scratches can be captured at different angles (as shown in FIG. 4). After the defect image D1 of the wound 201 is received, the image judging unit 40 receives the defect image D1, and the image judging unit 40 calculates the defect image D1 to judge the actual depth of the scratch 201.

承上，當獲知刮傷201之實際深度時，本實施例即可由缺陷去除單元60將刮傷201一次去除。如前所述，缺陷去除單元60可以是研磨機、拋光機或蝕刻機，若刮傷201的深度較深時，可依據刮傷201之深度而分別進行研磨、拋光以及蝕刻，可一次將刮傷201去除；若刮傷201的深度較淺時，仍可進行拋光或蝕刻，亦可一次將刮傷201去除。若為缺陷影像D2的水漬，可由蝕刻方式一次去除。In addition, when the actual depth of the scratch 201 is known, the defect removal unit 60 can remove the scratch 201 at one time in this embodiment. As mentioned above, the defect removal unit 60 can be a grinder, polisher or etching machine. If the depth of the scratch 201 is deep, it can be ground, polished and etched according to the depth of the scratch 201. The scratch 201 is removed; if the depth of the scratch 201 is shallow, polishing or etching can still be performed, or the scratch 201 can be removed at one time. If it is the water stain of the defect image D2, it can be removed by etching at one time.

於本實施例之檢測方法中，待測影像31被影像判斷單元40判斷有缺陷之缺陷影像，缺陷影像可透過缺陷影像資料庫50儲存，並對缺陷影像分類儲存。例如前述的缺陷影像D1，依其影像會被分類在刮傷的影像，而缺陷影像D2，依其影像會被分類在水漬的影像。當影像擷取單元30擷取下一待測影像31產生時，影像判斷單元40可依缺陷影像之分類，而自動媒合並比對出所屬的缺陷類型，若與缺陷影像D1相似則可直接判斷為刮傷，且若與缺陷影像D2相似則可直接判斷為水漬，此時便可由缺陷去除單元60以對應的缺陷去除方式對缺陷進行去除動作。In the detection method of the present embodiment, the image to be tested 31 is judged by the image judging unit 40 to be a defective defect image, and the defect image can be stored through the defect image database 50, and the defect image can be classified and stored. For example, the aforementioned defect image D1 is classified as a scratched image according to its image, and the defect image D2 is classified as a water stain image according to its image. When the image capturing unit 30 captures the next image to be tested 31 to be generated, the image determining unit 40 can classify the defect image, and automatically merge and compare the defect type. If it is similar to the defect image D1, it can be directly determined It is a scratch, and if it is similar to the defect image D2, it can be directly judged as a water stain. At this time, the defect removal unit 60 can remove the defect in a corresponding defect removal method.

由上述之說明不難發現本發明之特點，在於：From the above description, it is not difficult to find that the characteristics of the present invention are:

1.當矽晶圓200的表面有缺陷存在時，本發明之自動光學檢測機構100可自動檢測矽晶圓200之缺陷，即以影像判斷單元40接收待測影像31是否存在影像差異，即可相當精準地判斷矽晶圓200表面之缺陷有無，相較於習知以人工檢測者，可解決矽晶圓200出廠時因人工未發現缺陷而仍存在瑕疵的問題，使矽晶圓200出廠時無缺陷而能確保品質一致。1. When there is a defect on the surface of the silicon wafer 200, the automatic optical inspection mechanism 100 of the present invention can automatically detect the defect of the silicon wafer 200, that is, whether there is an image difference in the image 31 to be tested by the image determining unit 40 It can accurately determine the presence or absence of defects on the surface of the silicon wafer 200. Compared with the conventional manual inspection, it can solve the problem that the silicon wafer 200 does not find any defects when it is shipped from the factory. No defects and consistent quality.

2.當矽晶圓200之表面的缺陷為刮傷時，為檢測深度而可將矽晶圓200隨基座10傾斜，以擷取不同角度之複數缺陷影像而判斷缺陷之實際深度。而在缺陷的實際深度得知後，利於缺陷去除單元60依據所知深度而一次去除所述缺陷，以達到矽晶圓製程之效率能有效提昇之功效。2. When the defect on the surface of the silicon wafer 200 is scratched, the silicon wafer 200 can be tilted with the susceptor 10 in order to detect the depth to capture multiple defect images at different angles to determine the actual depth of the defect. After the actual depth of the defect is known, it is advantageous for the defect removal unit 60 to remove the defect at a time according to the known depth, so as to achieve the effect of effectively improving the efficiency of the silicon wafer process.

3.本發明中，被影像判斷單元40判斷為有缺陷之缺陷影像(如缺陷影像D1、D2)，可藉由缺陷影像資料庫50儲存並且進行分類，隨著檢測次數的增加而獲得的缺陷影像足夠且完整時，影像判斷單元40即可類似以人工智能的方式，依所述缺陷影像之分類而自動媒合並比對出所屬的缺陷類型，以達到精準地判斷出缺陷類型，且建議較佳去除方式的功效。3. In the present invention, the defect images (such as defect images D1 and D2) judged to be defective by the image judging unit 40 can be stored and classified by the defect image database 50, and the defects obtained as the number of inspections increase When the image is sufficient and complete, the image judging unit 40 can automatically mediate and compare the defect type according to the classification of the defect image in an artificial intelligence manner, so as to accurately judge the defect type and recommend comparison. Effective removal method.

以上所舉實施例僅用以說明本發明而已，非用以限制本發明之範圍。舉凡不違本發明精神所從事的種種修改或變化，俱屬本發明意欲保護之範疇。The above-mentioned embodiments are only used to illustrate the present invention, and are not used to limit the scope of the present invention. All modifications or changes made without violating the spirit of the present invention belong to the scope of the present invention.

100:自動光學檢測機構 200:矽晶圓 201:刮傷 10:基座 11:水平位移單元 12:底座 13:轉向單元 20:照光單元 30:影像擷取單元 31:待測影像 40:影像判斷單元 50:缺陷影像資料庫 60:缺陷去除單元 X:第一軸向 Y:第二軸向 L:光線 C:虛線 P:路徑 D1:缺陷影像 D2:缺陷影像 A:轉動軸向100: Automatic optical inspection mechanism 200: silicon wafer 201: Scratch 10: Pedestal 11: Horizontal displacement unit 12: Base 13: Steering unit 20: Illumination unit 30: Image capture unit 31: Image to be tested 40: Image judgment unit 50: Defect image database 60: Defect removal unit X: first axis Y: second axis L: light C: dotted line P: path D1: Defect image D2: Defect image A: Rotation axis

圖1係本發明之自動光學檢測機構之示意圖。圖2係本發明之自動光學檢測機構之方塊圖。圖3係本發明之基座水平位移而由影像擷取單元分段擷取影像之示意圖。圖4係本發明之自動光學檢測機構在矽晶圓傾斜至不同角度時擷取缺陷影像之示意圖。Figure 1 is a schematic diagram of the automatic optical inspection mechanism of the present invention. Figure 2 is a block diagram of the automatic optical inspection mechanism of the present invention. FIG. 3 is a schematic diagram of image capturing by the image capturing unit segmented by the horizontal displacement of the base of the present invention. 4 is a schematic diagram of the automatic optical inspection mechanism of the present invention capturing defect images when the silicon wafer is tilted to different angles.

100:自動光學檢測機構 100: Automatic optical inspection mechanism

200:矽晶圓 200: silicon wafer

10:基座 10: Pedestal

11:水平位移單元 11: Horizontal displacement unit

12:底座 12: Base

13:轉向單元 13: Steering unit

20:照光單元 20: Illumination unit

30:影像擷取單元 30: Image capture unit

X:第一軸向 X: first axis

L:光線 L: light

C:虛線 C: dotted line

A:轉動軸向 A: Rotation axis

Claims

一種檢測矽晶圓缺陷的自動光學檢測機構，其包含：一基座，供待檢測缺陷之矽晶圓設置；一照光單元，其對應於該基座，並提供所述矽晶圓之照光；一影像擷取單元，其與該照光單元設置於該矽晶圓之同一面，以擷取所述矽晶圓之表面在有該照光單元照光下之一待測影像；以及一影像判斷單元，其電性連接該影像擷取單元以接收該待測影像，且判斷該待測影像是否存在影像差異而有缺陷。An automatic optical inspection mechanism for detecting defects in silicon wafers, which includes: A base for the setting of silicon wafers with defects to be detected; A light unit corresponding to the base and provides light for the silicon wafer; An image capturing unit, which is disposed on the same surface of the silicon wafer as the illumination unit to capture an image to be measured on the surface of the silicon wafer under the illumination of the illumination unit; and An image determining unit is electrically connected to the image capturing unit to receive the image to be tested, and to determine whether the image to be tested has an image difference and is defective.

如請求項1所述之檢測矽晶圓缺陷的自動光學檢測機構，其中，進一步包含一水平位移單元與該基座連接，而控制該基座於水平方向位移。The automatic optical inspection mechanism for detecting silicon wafer defects according to claim 1, which further includes a horizontal displacement unit connected to the base to control the displacement of the base in the horizontal direction.

如請求項2所述之檢測矽晶圓缺陷的自動光學檢測機構，其中，進一步包含一轉向單元，其與該基座及該水平位移單元連接，讓該基座上之矽晶圓可傾斜至不同角度供該影像擷取單元擷取所述待測之矽晶圓的不同角度影像。The automatic optical inspection mechanism for detecting silicon wafer defects according to claim 2, which further includes a steering unit connected to the base and the horizontal displacement unit, so that the silicon wafer on the base can be tilted to Different angles are provided for the image capturing unit to capture images of different angles of the silicon wafer to be tested.

如請求項1所述之檢測矽晶圓缺陷的自動光學檢測機構，其中，該照光單元照光時之光線亮度大於10000流明。The automatic optical inspection mechanism for detecting defects in silicon wafers according to claim 1, wherein the light intensity of the illumination unit is greater than 10,000 lumens when illuminated.

如請求項1所述之檢測矽晶圓缺陷的自動光學檢測機構，其中，進一步包括一缺陷影像資料庫，該缺陷影像資料庫電性連接該影像判斷單元，並儲存影像判斷單元複數對應該矽晶圓的缺陷影像，以供該影像判斷單元進行矽晶圓缺陷判斷。The automatic optical inspection mechanism for detecting silicon wafer defects according to claim 1, which further includes a defect image database, the defect image database is electrically connected to the image judgment unit, and stores a plurality of image judgment units corresponding to the silicon wafer The defect image of the wafer is used by the image judging unit to judge the defect of the silicon wafer.

如請求項1所述之檢測矽晶圓缺陷的自動光學檢測機構，其中，進一步包括一缺陷去除單元，以去除所述缺陷。The automatic optical inspection mechanism for detecting defects in silicon wafers according to claim 1, which further includes a defect removal unit to remove the defects.

一種檢測矽晶圓缺陷的自動光學檢測方法，其包含以下步驟：將一待檢測缺陷之矽晶圓設置在一基座上；以一照光單元在該基座上方提供所述矽晶圓之照光，使所述矽晶圓表面具有足以突顯缺陷的亮度；所述矽晶圓之表面在有該照光單元之照光下，以一影像擷取單元在該基座上方擷取所述矽晶圓表面之一待測影像；以及以一電性連接該影像擷取單元之影像判斷單元接收該待測影像，並以該影像判斷單元判斷該待測影像中有影像異常處為缺陷。An automatic optical inspection method for detecting silicon wafer defects, which includes the following steps: Place a silicon wafer with defects to be detected on a base; A illuminating unit is used to provide illumination of the silicon wafer above the base, so that the surface of the silicon wafer has sufficient brightness to highlight defects; The surface of the silicon wafer is irradiated by the light unit, an image capturing unit is used to capture an image to be measured on the surface of the silicon wafer above the base; and An image determining unit electrically connected to the image capturing unit receives the image to be tested, and the image determining unit determines that an abnormal image in the image to be tested is a defect.

如請求項7所述之檢測矽晶圓缺陷的自動光學檢測方法，其中，該影像擷取單元在該基座上方的位置固定，該基座可於水平方向沿一第一軸向和一第二軸向位移，該第一軸向垂直於該第二軸向，以該基座帶動該待測之矽晶圓沿該第一軸向和該第二軸向水平位移，並由該影像擷取單元分段擷取該待測之矽晶圓之局部影像後，由該影像判斷單元整合並還原為該待測影像。The automatic optical inspection method for detecting silicon wafer defects according to claim 7, wherein the position of the image capturing unit is fixed above the base, and the base can be horizontally along a first axis and a first axis Two axial displacements, the first axial direction is perpendicular to the second axial direction, the silicon wafer under test is driven by the base to move horizontally along the first axial direction and the second axial direction, and the image is captured After the capturing unit captures the partial image of the silicon wafer to be tested, the image determining unit integrates and restores the image to be tested.

如請求項8所述之檢測矽晶圓缺陷的自動光學檢測方法，其中，該基座具有一平行該水平方向之轉動軸向，該基座以該轉動軸向為軸心而可傾斜至不同角度，於所述缺陷具有深度時，調整所述矽晶圓被該影像擷取單元擷取影像之角度，以擷取所述具有深度之缺陷在不同角度時之複數缺陷影像，且以該影像判斷單元依據該複數缺陷影像判斷所述缺陷之實際深度。The automatic optical inspection method for detecting silicon wafer defects according to claim 8, wherein the base has a rotation axis parallel to the horizontal direction, and the base uses the rotation axis as the axis and can be inclined to different Angle, when the defect has depth, adjust the angle at which the silicon wafer is captured by the image capturing unit to capture multiple defect images of the depth defect at different angles, and use the image The judging unit judges the actual depth of the defect according to the plural defect images.

如請求項7所述之檢測矽晶圓缺陷的自動光學檢測方法，其中，該照光單元照光時之光線亮度大於10000流明。The automatic optical inspection method for detecting silicon wafer defects according to claim 7, wherein the brightness of the light when the light is illuminated by the light unit is greater than 10,000 lumens.

如請求項7所述之檢測矽晶圓缺陷的自動光學檢測方法，其中，以一缺陷影像資料庫電性連接該影像判斷單元，以儲存該待測影像在所述影像判斷單元判斷為有缺陷之缺陷影像，以供該影像判斷單元進行矽晶圓缺陷判斷。The automatic optical inspection method for detecting silicon wafer defects according to claim 7, wherein a defect image database is electrically connected to the image determination unit to store the image to be tested as determined by the image determination unit to be defective The defect image is used by the image judging unit for silicon wafer defect judgment.

如請求項11所述之檢測矽晶圓缺陷的自動光學檢測方法，其中，一前述缺陷影像產生時，該缺陷影像資料庫對該缺陷影像分類儲存，該影像判斷單元可依所述缺陷影像之分類而自動媒合並比對出所屬的缺陷類型。The automatic optical inspection method for detecting silicon wafer defects according to claim 11, wherein, when a defect image is generated, the defect image database classifies and stores the defect image, and the image judgment unit can be based on the defect image Categorize and automatically merge and compare the defect type.

如請求項12所述之檢測矽晶圓缺陷的自動光學檢測方法，其中，進一步以一缺陷去除單元依所述缺陷類型，該缺陷去除單元是以研磨、拋光或蝕刻之至少一者去除所述缺陷。The automatic optical inspection method for detecting silicon wafer defects according to claim 12, wherein a defect removal unit is further used according to the defect type, and the defect removal unit removes the defect by at least one of grinding, polishing or etching defect.