TW202036978A - High frequency transmission device and high frequency signal transmission method - Google Patents
High frequency transmission device and high frequency signal transmission method Download PDFInfo
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- H—ELECTRICITY
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- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
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- H—ELECTRICITY
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- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/081—Microstriplines
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- H—ELECTRICITY
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- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/30—Insulated conductors or cables characterised by their form with arrangements for reducing conductor losses when carrying alternating current, e.g. due to skin effect
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- H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
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- H01P3/026—Coplanar striplines [CPS]
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- H—ELECTRICITY
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- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
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- H—ELECTRICITY
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- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
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- H01R24/00—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure
- H01R24/38—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts
- H01R24/40—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts specially adapted for high frequency
- H01R24/50—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts specially adapted for high frequency mounted on a PCB [Printed Circuit Board]
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Abstract
Description
本發明係關於高頻傳輸裝置及高頻訊號傳輸方法。The present invention relates to a high-frequency transmission device and a high-frequency signal transmission method.
一般,於金屬流通交流電流的話,因為表皮效應,交流電流會流通於接近該金屬的表面,另一方面,幾乎不流通於該金屬的中心部,該金屬的交流電阻值會變高。此因在金屬的中心部產生反電動勢,電流難以流通之故。高頻訊號也與交流電流相同,故於以金屬所構成的傳輸路徑流通高頻訊號的話,該傳輸路徑的交流電阻值會上升,容易發生高頻訊號的傳輸損失(減衰)。Generally, when an alternating current flows through a metal, the alternating current flows through the surface close to the metal due to the skin effect. On the other hand, it hardly flows through the center of the metal, and the alternating resistance value of the metal increases. This is because a back electromotive force is generated in the center of the metal, making it difficult for current to flow. The high-frequency signal is also the same as the AC current. Therefore, if a high-frequency signal flows through a transmission path made of metal, the AC resistance value of the transmission path will increase, and the transmission loss (attenuation) of the high-frequency signal is likely to occur.
於後述非專利文獻1,記載以鐵奈米粒子或冶金級矽奈米粒子所構成的多晶體。以鐵奈米粒子構成的多晶體,係將高純度的氧化鐵細粉末,藉由液相雷射剝蝕法,還原‧奈米粒子化之後,膠狀化,使用電加熱板以250度燒成其鐵奈米膠所得。
[先前技術文獻]
[專利文獻]Non-Patent
[非專利文獻1]日本關西大學 系統理工學部 電氣電子資訊工學科 准教授 佐伯拓 ”燒成奈米構造金屬的特殊行為 -MHz帶高頻之電阻的喪失-”[online]、2018年6月25日發表 2018年10月29日檢索、網際網路(URL:http://www.microwave.densi.kansai-u.ac.jp/face/%E3%83%97%E3%83%AC%E3%82%B9%E3%83%AA%E3%83%AA%E3%83%BC%E3%82%B920180625v2.pdf)[Non-Patent Document 1] Taku Saeki, Associate Professor, Department of Electrical, Electronic and Information Engineering, Faculty of Systems Science and Engineering, Kansai University, Japan "Special Behavior of Burning Nanostructured Metal-Loss of High Frequency Resistance in MHz Band -" [online], June 2018 Published on the 25th. Retrieved on October 29, 2018. Internet (URL: http://www.microwave.densi.kansai-u.ac.jp/face/%E3%83%97%E3%83%AC% E3%82%B9%E3%83%AA%E3%83%AA%E3%83%BC%E3%82%B920180625v2.pdf)
[發明所欲解決之課題][The problem to be solved by the invention]
對以前述之鐵奈米粒子構成的多晶體流通頻率3MHz~5MHz的交流電流的時候,可得該多晶體的交流電阻值實質上為0mΩ的計測結果。也就是說,該多晶體係具有流通頻率3MHz~5MHz的交流電流時,交流電阻值實質上為0mΩ的物理性質。再者,以冶金級矽奈米微粒構成的多晶體也利用與前述相同的製造方法取得,具有相同物理性質。When an alternating current with a frequency of 3 MHz to 5 MHz is passed to a polycrystal composed of the aforementioned iron nanoparticle, the measurement result of the alternating resistance value of the polycrystal is substantially 0 mΩ. That is, this polycrystalline system has the physical property that the AC resistance value is substantially 0 mΩ when an AC current with a frequency of 3 MHz to 5 MHz is passed. Furthermore, polycrystals composed of metallurgical-grade silicon nano-particles are also obtained by the same manufacturing method as described above, and have the same physical properties.
本發明係提供使用具有傳輸高頻訊號時,交流電阻值會急遽降低之物理性質的多晶體等之電阻降低材料,可減低高頻訊號的傳輸損失之高頻傳輸裝置及高頻訊號傳輸方法。 [用以解決課題之手段]The present invention provides a high-frequency transmission device and a high-frequency signal transmission method that can reduce the transmission loss of high-frequency signals by using resistance-reducing materials such as polycrystals, which have physical properties such that the AC resistance value decreases sharply when transmitting high-frequency signals. [Means to solve the problem]
為了解決前述課題,本發明之一樣態的高頻傳輸裝置係具備介電體,與可傳輸高頻訊號的傳輸路徑。傳輸路徑的至少一部分,係位於介電體上或介電體內。傳輸路徑的至少一部分利用以導體微粒子構成的電阻降低材料所構成。該電阻降低材料係具有傳輸於傳輸路徑之高頻訊號的頻率在一或複數特定頻率帶域時,交流電阻值急遽降低的物理性質,或傳輸於傳輸路徑之高頻訊號的頻率在一或複數特定頻率帶域時,藉由高頻訊號產生磁場,藉由該磁場所產生於電阻降低材料的中心部中的感應電動勢(反電動勢)的方向為相反的物理性質。 再者,傳輸路徑之設置於介電體的至少一部分,與傳輸路徑之以電阻降低材料所構成的至少一部分,作為相同部分亦可,作為不同部分亦可。In order to solve the aforementioned problems, the same high-frequency transmission device of the present invention includes a dielectric and a transmission path capable of transmitting high-frequency signals. At least a part of the transmission path is located on or within the dielectric body. At least a part of the transmission path is made of a resistance reducing material made of conductive fine particles. The resistance reduction material has the physical property that the frequency of the high-frequency signal transmitted in the transmission path is one or more specific frequency bands, the AC resistance value is rapidly reduced, or the frequency of the high-frequency signal transmitted in the transmission path is one or more In a specific frequency band, a magnetic field is generated by a high-frequency signal, and the direction of the induced electromotive force (back electromotive force) in the center of the resistance reducing material generated by the magnetic field is opposite physical properties. Furthermore, at least a part of the transmission path provided in the dielectric body and at least a part of the transmission path made of the resistance reducing material may be the same part or different parts.
此種樣態的高頻傳輸裝置之狀況中,傳輸於傳輸路徑之高頻訊號的頻率在一或複數特定頻率帶域時,傳輸路徑的至少一部分即電阻降低材料的交流電阻值會急遽降低,故可減輕其高頻訊號的傳輸損失。In this type of high-frequency transmission device, when the frequency of the high-frequency signal transmitted in the transmission path is one or more specific frequency bands, the AC resistance value of at least part of the transmission path, that is, the resistance-reducing material, will drop sharply. Therefore, the transmission loss of the high-frequency signal can be reduced.
微粒子可設為導體微粒子或半導體微粒子。前者的狀況中,電阻降低材料係利用以導體微粒子構成的多晶體所構成亦可。後者的狀況中,電阻降低材料係以半導體微粒子構成亦可。The fine particles may be conductive fine particles or semiconductor fine particles. In the former case, the resistance-reducing material may be made of polycrystal made of conductive fine particles. In the latter case, the resistance reducing material may be composed of semiconductor fine particles.
可作為傳輸路徑係具備至少一部分設置於介電體的至少一個訊號導體,與沿著至少一個訊號導體的至少一部分延伸的第1接地導體的構造。The transmission path may be a structure including at least one signal conductor at least partly provided in the dielectric body, and a first ground conductor extending along at least a part of the at least one signal conductor.
可作為至少一個訊號導體及第1接地導體中至少一方的導體具有比電阻降低材料的直流電阻值還小之直流電阻值的第1導體部,與以電阻降低材料構成的第2導體部的構造。It can be used as at least one of the signal conductor and the first grounding conductor. The first conductor has a DC resistance value smaller than that of the resistance reducing material, and the second conductor is made of the resistance reducing material. .
可作為至少一個訊號導體具有第1導體部及第2導體部時,至少一個訊號導體的第2導體部,係相對於第1導體部,配置於第1接地導體(另一方的導體)側的構造。此時,在至少一個訊號導體側可減輕高頻訊號的傳輸損失。又,可於至少一個訊號導體的直流電阻值低的第1導體部連接電子零件、連接器、纜線或銷等,所以,可提升至少一個訊號導體的連接信賴性。When at least one signal conductor has a first conductor part and a second conductor part, the second conductor part of the at least one signal conductor is arranged on the first ground conductor (the other conductor) side relative to the first conductor part structure. At this time, the transmission loss of high-frequency signals can be reduced on the side of at least one signal conductor. In addition, electronic components, connectors, cables, pins, etc. can be connected to the first conductor portion with a low DC resistance of at least one signal conductor, so that the reliability of the connection of at least one signal conductor can be improved.
可作為第1接地導體具有第1導體部及第2導體部時,第1接地導體的第2導體部,係相對於第1導體部,配置於至少一個訊號導體(另一方的導體)側的構造。此時,在第1接地導體側可減輕高頻訊號的傳輸損失。又,可對第1接地導體的直流電阻值低的第1導體部進行接地連接,所以,可提升第1接地導體的連接信賴性。When it can be used as a first ground conductor with a first conductor part and a second conductor part, the second conductor part of the first ground conductor is arranged on the side of at least one signal conductor (the other conductor) with respect to the first conductor part structure. In this case, the transmission loss of high-frequency signals can be reduced on the side of the first ground conductor. In addition, the first conductor portion having a low DC resistance value of the first ground conductor can be grounded. Therefore, the reliability of the connection of the first ground conductor can be improved.
可作為傳輸路徑係更具備第2接地導體的構造。可作為第2接地導體係沿著至少一個訊號導體的至少一部分延伸的構造。此時,作為第1接地導體係配置於至少一個訊號導體的一方側,第2接地導體係配置於至少一個訊號導體的另一方側的構造亦可。It can be used as a transmission path with a second ground conductor structure. It can be used as a structure in which the second ground conductor system extends along at least a part of at least one signal conductor. In this case, a structure in which the first ground conductor system is arranged on one side of at least one signal conductor and the second ground conductor system is arranged on the other side of at least one signal conductor may be adopted.
可作為至少一個訊號導體更具有以電阻降低材料構成的第3導體部的構造。可作為至少一個訊號導體的第2導體部,係相對於該訊號導體的第1導體部,配置於第1接地導體側;該訊號導體的第3導體部,係相對於該訊號導體的第1導體部,配置於第2接地導體側的構造。此時也在至少一個訊號導體側可減輕高頻訊號的傳輸損失。It can be used as at least one signal conductor and has a structure of a third conductor part made of a resistance reducing material. The second conductor part that can be used as at least one signal conductor is arranged on the side of the first ground conductor relative to the first conductor part of the signal conductor; the third conductor part of the signal conductor is relative to the first conductor part of the signal conductor. The conductor part is arranged on the side of the second ground conductor. At this time, the transmission loss of the high-frequency signal can be reduced on the side of at least one signal conductor.
可作為第2接地導體係具有比電阻降低材料的直流電阻值還小之直流電阻值的第1導體部,與以電阻降低材料構成的第2導體部的構造。可作為該第2接地導體的第2導體部,係相對於第2接地導體的第1導體部,配置於至少一個訊號導體側的構造。此時,在第2接地導體側可減輕高頻訊號的傳輸損失。又,可對第2接地導體的直流電阻值低的第1導體部進行接地連接,所以,可提升第2接地導體的連接信賴性。It can be used as a second ground conductor system having a first conductor part having a DC resistance value smaller than the DC resistance value of the resistance reducing material, and a second conductor part made of the resistance reducing material. The second conductor portion that can be used as the second ground conductor is a structure in which the first conductor portion of the second ground conductor is arranged on the side of at least one signal conductor. In this case, the transmission loss of high-frequency signals can be reduced on the side of the second ground conductor. In addition, the first conductor portion having a low DC resistance value of the second ground conductor can be grounded. Therefore, the reliability of the connection of the second ground conductor can be improved.
前述任一樣態的第2導體部,係固定於對應之第1導體部的至少一部分上亦可。至少一個訊號導體的前述第3導體部,係固定於該訊號導體的前述第1導體部的至少一部分上亦可。The second conductor part in any of the aforementioned states may be fixed to at least a part of the corresponding first conductor part. The third conductor portion of at least one signal conductor may be fixed to at least a part of the first conductor portion of the signal conductor.
可作為第1接地導體,係於與其長度方向正交的正交方向中剖面圖為大略環狀,配置於至少一個訊號導體的周圍的構造。此時,可作為至少一個訊號導體的第2導體部,係於正交方向中剖面圖為大略環狀,設置於該訊號導體的第1導體部的至少一部分的外周面上的構造。It can be used as the first grounding conductor, which has a roughly ring-shaped cross-sectional view in an orthogonal direction orthogonal to its longitudinal direction and is arranged around at least one signal conductor. At this time, the second conductor part which can be used as at least one signal conductor has a substantially ring-shaped cross-sectional view in the orthogonal direction and is provided on the outer peripheral surface of at least a part of the first conductor part of the signal conductor.
可作為第1接地導體的第1導體部,係於與其長度方向正交的正交方向中剖面圖為大略環狀,配置於至少一個訊號導體的周圍的構造。此時,可作為第1接地導體的第2導體部,係於正交方向中剖面圖為大略環狀,設置於第1接地導體的第1導體部的至少一部分的內周面上的構造。The first conductor part, which can be used as the first ground conductor, has a roughly ring-shaped cross-sectional view in an orthogonal direction orthogonal to its longitudinal direction and is arranged around at least one signal conductor. At this time, the second conductor part that can be used as the first ground conductor has a substantially ring-shaped cross-sectional view in the orthogonal direction, and is provided on the inner peripheral surface of at least a part of the first conductor part of the first ground conductor.
可作為前述至少一個訊號導體的第1導體部,係具有未被該訊號導體的第2導體部覆蓋的連接部的構造。可作為連接部根據連接對象,彈性接觸或滑動接觸的構造。此時,至少一個訊號導體的第1導體部的連接部根據連接對象而彈性接觸或滑動接觸,但至少一個訊號導體的第1導體部的連接部,係如上所述,未被第2導體部覆蓋,故可防止以電阻降低材料構成的第2導體部磨耗或破損。或者,也可作為連接部可對於連接對象彈性接觸的構造。此時,連接部對於連接對象彈性接觸時,可防止以電阻降低材料構成的第2導體部磨耗或破損。The first conductor part that can be used as the aforementioned at least one signal conductor has a structure that is not covered by the second conductor part of the signal conductor. It can be used as the connection part according to the connection object, elastic contact or sliding contact structure. At this time, the connecting portion of the first conductor portion of at least one signal conductor is in elastic contact or sliding contact depending on the connection object, but the connecting portion of the first conductor portion of at least one signal conductor is not the second conductor portion as described above. By covering, it is possible to prevent abrasion or breakage of the second conductor part made of resistance reducing material. Alternatively, it may be a structure in which the connection portion can elastically contact the connection object. At this time, when the connection part is in elastic contact with the connection object, it is possible to prevent abrasion or damage of the second conductor part made of the resistance reducing material.
可作為至少一個訊號導體,係包含為一對,以相互鄰接之方式配置的第1訊號導體及第2訊號導體的構造。此時,是否省略前述第1接地導體及/或第2接地導體可任意決定。It can be used as at least one signal conductor and includes a pair of first signal conductors and second signal conductors arranged adjacent to each other. At this time, whether to omit the aforementioned first ground conductor and/or second ground conductor can be arbitrarily determined.
可作為第1訊號導體及第2訊號導體的至少一方的導體,係更具有以電阻降低材料構成的第4導體部的構造。或者,可作為第1訊號導體及第2訊號導體的至少一方的導體,係不具有第2導體部,具有第1導體部及第4導體部的構造。The conductor, which can be used as at least one of the first signal conductor and the second signal conductor, further has a structure of a fourth conductor portion made of a resistance reducing material. Alternatively, the conductor that may be at least one of the first signal conductor and the second signal conductor does not have the second conductor part but has a structure of the first conductor part and the fourth conductor part.
可作為第1訊號導體具有第1導體部及第4導體部時,第1訊號導體的第4導體部,係相對於第1訊號導體的第1導體部,配置於第2訊號導體側的構造。此時,在第1訊號導體側可減輕高頻訊號的傳輸損失。又,可於第1訊號導體的直流電阻值低的第1導體部連接電子零件、連接器、纜線或銷等,所以,可提升第1訊號導體的連接信賴性。 可作為第2訊號導體具有第1導體部及第4導體部時,第2訊號導體的第4導體部,係相對於第2訊號導體的第1導體部,配置於第1訊號導體側的構造。此時,在第2訊號導體側可減輕高頻訊號的傳輸損失。又,可於第2訊號導體的直流電阻值低的第1導體部連接電子零件、連接器、纜線或銷等,所以,可提升第2訊號導體的連接信賴性。When the first signal conductor has the first conductor part and the fourth conductor part, the fourth conductor part of the first signal conductor is arranged on the second signal conductor side relative to the first conductor part of the first signal conductor . At this time, the transmission loss of high-frequency signals can be reduced on the side of the first signal conductor. In addition, electronic components, connectors, cables, pins, etc. can be connected to the first conductor portion with a low DC resistance value of the first signal conductor, so that the reliability of the connection of the first signal conductor can be improved. When the second signal conductor has the first conductor part and the fourth conductor part, the fourth conductor part of the second signal conductor is arranged on the side of the first signal conductor relative to the first conductor part of the second signal conductor . At this time, the transmission loss of high-frequency signals can be reduced on the side of the second signal conductor. In addition, electronic components, connectors, cables, pins, etc. can be connected to the first conductor portion where the DC resistance of the second signal conductor is low. Therefore, the reliability of the connection of the second signal conductor can be improved.
可作為前述任一樣態的第4導體部,係固定於對應之第1導體部的至少一部分上的構造。The fourth conductor part that can be used as any of the foregoing is a structure that is fixed to at least a part of the corresponding first conductor part.
本發明之一樣態的高頻訊號傳輸方法,係具備使前述任一樣態的高頻傳輸裝置的傳輸路徑,傳輸具有前述一或複數特定頻率帶域的頻率的高頻訊號。該高頻訊號的傳輸,係包含藉由傳輸路徑之電阻降低材料的交流電阻值急遽降低及/或高頻訊號來產生磁場,藉由該磁場所產生於電阻降低材料的中心部中的感應電動勢(反電動勢)的方向為相反的物理性質。The homogeneous high-frequency signal transmission method of the present invention is provided with a transmission path of any of the aforementioned high-frequency transmission devices to transmit high-frequency signals having frequencies in the aforementioned one or more specific frequency bands. The transmission of the high-frequency signal includes the rapid decrease of the AC resistance value of the resistance-reducing material of the transmission path and/or the high-frequency signal to generate a magnetic field, and the induced electromotive force in the center of the resistance-reducing material is generated by the magnetic field The direction of (back electromotive force) is the opposite physical property.
以下,針對本發明的複數實施例進行說明。 [實施例1]Hereinafter, a plurality of embodiments of the present invention will be described. [Example 1]
以下,針對包含本發明之實施例1的複數實施例相關的高頻傳輸裝置D1,一邊參照圖1A及圖1B一邊進行說明。高頻傳輸裝置D1是高頻傳輸用的基板。以下,也將高頻傳輸裝置D1稱為傳輸用基板D1。於圖1A及圖1B,揭示實施例1的傳輸用基板D1。Hereinafter, the high-frequency transmission device D1 related to a plurality of embodiments including the
傳輸用基板D1具備介電體100。於圖1B,揭示介電體100的厚度方向即Z-Z’方向,Z-Z’方向係Z方向及其相反側的Z’方向。介電體100具有Z方向側的第1面101,與Z’方向側的第2面102。The transmission substrate D1 includes a dielectric 100. In Fig. 1B, the thickness direction of the dielectric 100 is disclosed, that is, the Z-Z' direction. The Z-Z' direction is the Z direction and the Z'direction on the opposite side. The
傳輸用基板D1更具備可傳輸高頻訊號的傳輸路徑200。傳輸路徑200具備訊號導體S與接地導體G(第1接地導體)。傳輸路徑200係如下所述,位於介電體100上。訊號導體S係設置於介電體100的第1面101上,且從該第1面101的任意第1位置延伸至不同於前述第1位置的第2位置。接地導體G係設置於介電體100的第2面102上,沿著訊號導體S延伸,且於Z-Z’方向中挾持介電體100對向於訊號導體S。訊號導體S及接地導體G構成可傳輸高頻訊號的微帶線。The transmission substrate D1 further has a
訊號導體S係其一部分或全部能以多晶體(電阻降低材料)構成。此時,接地導體G係其一部分或全部能以多晶體構成,或其全部以不包含多晶體的導體構成亦可。或者,訊號導體S的全部能以不包含多晶體的導體構成。此時,接地導體G係其一部分或全部能以多晶體構成,或其全部以不包含多晶體的導體構成亦可。A part or all of the signal conductor S can be made of polycrystalline (resistance reducing material). In this case, part or all of the ground conductor G may be formed of polycrystals, or all of them may be formed of conductors that do not include polycrystals. Alternatively, all of the signal conductor S can be formed of a conductor that does not include polycrystalline. In this case, part or all of the ground conductor G may be formed of polycrystals, or all of them may be formed of conductors that do not include polycrystals.
該多晶體係以導體微粒子構成。導體微粒子係平均粒子徑為數nm~數十nm的導體奈米粒子,例如鐵奈米粒子、冶金級矽奈米粒子、銅奈米粒子或鎳奈米粒子等。該導體奈米粒子係利用以下方法所得。藉由將成為導體奈米粒子的原料之高純度的氧化導體細粉配置於溶媒內,對於該氧化導體細粉進行液相雷射剝蝕,還原該氧化導體細粉,進行奈米粒子化。 再者,導體奈米粒子也可藉由前述的液相雷射剝蝕以外之公知的液相法,或公知的氣相法作成。作為液相法,有共沉澱法、溶膠凝膠法、液相還原法或水熱合成法等,作為氣相法,有電爐法、化學火焰法、雷射法或熱電漿法等。 以前述任一方法所得知導體奈米粒子被混入黏結劑,進行膠狀化。燒成以該導體奈米粒子作為主成分的導電膠。藉由該燒成,去除黏結劑,故前述多晶體以導體奈米粒子構成。The polycrystalline system is composed of conductive fine particles. The conductive fine particles are conductive nanoparticles with an average particle diameter of several nm to several tens of nm, such as iron nanoparticles, metallurgical grade silicon nanoparticles, copper nanoparticles, or nickel nanoparticles. The conductor nanoparticle was obtained by the following method. By arranging high-purity oxidized conductor fine powder as a raw material of conductor nanoparticle in a solvent, liquid phase laser ablation is performed on the oxidized conductor fine powder, and the oxidized conductor fine powder is reduced and nanoparticleized. Furthermore, conductive nanoparticles can also be produced by a known liquid phase method other than the aforementioned liquid phase laser ablation, or a known gas phase method. As the liquid phase method, there are coprecipitation method, sol-gel method, liquid phase reduction method, or hydrothermal synthesis method, and as the gas phase method, there are electric furnace method, chemical flame method, laser method, or thermoplasma method. According to any of the aforementioned methods, the conductive nano particles are mixed with a binder and gelled. A conductive paste containing the conductor nano particles as the main component is fired. By this firing, the binder is removed, so the aforementioned polycrystal is composed of conductive nanoparticles.
該多晶體係具有傳輸於傳輸路徑200之高頻訊號的頻率在MHz~GHz帶域(例如1MHz~20GH附近的帶域等)中之一或複數特定頻率帶域時,多晶體的交流電阻值會急遽降低的物理性質亦可,但並不限定於此。該多晶體的物理性質係即使傳輸於傳輸路徑200之高頻訊號的頻率在THz以上的範圍中之一或複數特定頻率帶域的狀況中也可顯現。該多晶體的物理性質並不是藉由超導現象所產生者,而是在環境溫度下產生者。該多晶體的物理性質更具體來說,如下所述般顯現。
在環境溫度下,流動於多晶體之高頻訊號(高頻電流)的頻率在前述一或複數特定頻率帶域以外的頻率帶域時,藉由其高頻訊號產生磁場,藉由該磁場,於多晶體中心部中,於妨礙高頻訊號的流向的方向會產生感應電動勢(反電動勢)。此時,多晶體的磁透率的實部為正。另一方面,流動於多晶體之高頻訊號的頻率在前述一或複數特定頻率帶域時,藉由其高頻訊號產生磁場,藉由該磁場,藉由該磁場所產生於多晶體的中心部中的感應電動勢(反電動勢)的方向成為相反。此時,多晶體的磁透率的實部為負。如此,藉由產生於多晶體的中心部中的感應電動勢(反電動勢)的方向相對於妨礙高頻訊號的流向的方向成為相反,發揮促進高頻訊號的流向的作用,故流動於多晶體之高頻訊號的頻率在前述一或複數特定頻率帶域的狀況,相較於流動於多晶體之高頻訊號的頻率在前述一或複數特定頻率帶域以外的狀況,多晶體的交流電阻值會急遽降低,實質上成為0Ω或負電阻。高頻訊號的一或複數特定頻率帶域,係藉由利用高頻訊號所產生之磁場的作用,成為多晶體產生磁性共振的頻率帶域。
再者,多晶體的直流電阻值,係比多晶化前的原料(也就是說,前述導體奈米粒子的原料)還高。以下,將使傳輸路徑200傳輸一或複數特定頻率帶域的高頻訊號時稱為「高頻訊號的傳輸時」。The polycrystalline system has the frequency of the high-frequency signal transmitted through the
訊號導體S及接地導體G的至少一方的導體的一部分以多晶體構成時,該至少一方的導體可作為具有第1導體部與以前述多晶體構成的第2導體部的構造。 第1導體部係以具有比前述多晶體(第2導體部)的直流電阻值還小之直流電阻值的素材及具有抗氧化性等之耐腐蝕性的素材的至少一方的素材所構成。第1導體部係例如以鍍銅或銅箔等構成為佳。第1導體部的直流電阻值可因應第1導體部的長度及剖面面積來適當設定。 以下,為了方便說明,對訊號導體S的第1導體部附加符號S1,對訊號導體S的第2導體部附加符號S2,對接地導體G的第1導體部附加符號G1,對接地導體G的第2導體部附加符號G2來區別。When a part of the conductor of at least one of the signal conductor S and the ground conductor G is made of polycrystal, the at least one conductor may have a structure having a first conductor part and a second conductor part made of the aforementioned polycrystal. The first conductor part is composed of at least one of a material having a DC resistance value smaller than the DC resistance value of the aforementioned polycrystal (second conductor part) and a material having corrosion resistance such as oxidation resistance. The first conductor part is preferably composed of, for example, copper plating or copper foil. The DC resistance value of the first conductor portion can be appropriately set according to the length and cross-sectional area of the first conductor portion. Hereinafter, for the convenience of description, the first conductor part of the signal conductor S is assigned the symbol S1, the second conductor part of the signal conductor S is assigned the symbol S2, the first conductor part of the ground conductor G is assigned the symbol G1, and the ground conductor G The second conductor part is identified by adding the symbol G2.
然而,高頻訊號的傳輸時,藉由表皮效應,高頻訊號的電流密度係訊號導體S中之接地導體G側的部分(訊號導體S中之與接地導體G的電性耦合強的部分)及接地導體G中之訊號導體S側的部分(接地導體G中之與訊號導體S的電性耦合強的部分)會變高。However, during the transmission of high-frequency signals, due to the skin effect, the current density of the high-frequency signals is the part of the signal conductor S on the ground conductor G side (the part of the signal conductor S that has a strong electrical coupling with the ground conductor G) And the portion of the ground conductor G on the signal conductor S side (the portion of the ground conductor G that has a strong electrical coupling with the signal conductor S) will become higher.
訊號導體S具有第1導體部S1及第2導體部S2時,第1導體部S1及第2導體部S2更可設為以下的構造。第2導體部S2係設置於介電體100的第1面101上,且從第1位置延伸至第2位置亦可,但是,在一或複數處斷裂亦可。第1導體部S1係設置於第2導體部S2之Z方向側的面上,且於Z方向的俯視中從第1位置延伸至第2位置。如此,第2導體部S2係固定於第1導體部S1的Z’方向側之面的至少一部分上,且相對於第1導體部S1配置於接地導體G側。換句話說,第2導體部S2構成高頻訊號的傳輸時,訊號導體S中之與接地導體G的電性耦合強的部分(高頻訊號的電流密度高的部分。再者,第1導體部S1係具有第1位置上的第1連接部,與第2位置上的第2連接部。When the signal conductor S has the first conductor portion S1 and the second conductor portion S2, the first conductor portion S1 and the second conductor portion S2 can be more configured as follows. The second conductor portion S2 is provided on the
接地導體G具有第1導體部G1及第2導體部G2時,第1導體部G1及第2導體部G2更可設為以下的構造。第2導體部G2係設置於介電體100的第2面102上,且沿著訊號導體S延伸。第2導體部G2係在一或複數處有缺口亦可。第1導體部G1係設置於第2導體部G2之Z’方向側的面上。如此,第2導體部G2係固定於第1導體部G1的Z方向側之面的至少一部分上,且相對於第1導體部G1配置於訊號導體S側。換句話說,第2導體部G2構成高頻訊號的傳輸時,接地導體G中之與訊號導體S的電性耦合強的部分(高頻訊號的電流密度高的部分。When the ground conductor G has the first conductor part G1 and the second conductor part G2, the first conductor part G1 and the second conductor part G2 can be more configured as follows. The second conductor portion G2 is provided on the
傳輸用基板D1更具備發送部300亦可。發送部300係以藉由可對傳輸路徑200發送高頻訊號的IC等之邏輯電路,或以處理器等處理的軟體所實現。發送部300係安裝於介電體100的第1面101的第1位置上,電性且機械連接於訊號導體S。訊號導體S具有第1導體部S1時,發送部300係電性且機械連接於第1導體部S1的第1連接部。例如,發送部300係焊接於第1導體部S1或第1導體部S1的第1連接部。再者,可省略發送部300。此時,在傳輸用基板D1搭載於電子機器的狀態下,為了電性連接於電子機器的發送部,訊號導體S或訊號導體S的第1導體部S1可連接於連接器,或纜線及銷等的連接手段為佳。The transmission board D1 may further include the
於訊號導體S的第2位置上的部分,可連接於連接器、纜線及銷等的連接手段,或接收高頻訊號的接收部等的電子零件為佳。訊號導體S具有第1導體部S1時,於第1導體部S1的第2連接部(也就是說第2位置上的部分),可電性且機械連接連接器、連接手段、或電子零件。 再者,第1導體部S1的第1連接部及第2連接部,係於Z方向中並未被第2導體部S2覆蓋。第1導體部S1的第1連接部及第2連接部的至少一方的連接部係相當於申請專利範圍的訊號導體之第1導體部的連接部。該至少一方的連接部的Z方向側之面,藉由連接器的端子(連接對象)彈性接觸或滑動接觸時,於至少一方的連接部之Z方向側的面上,並未設置第2導體部S2,所以,可防止連接器的端子的彈性接觸或滑動接觸所導致之第2導體部S2的磨耗及破損。The portion at the second position of the signal conductor S may be connected to connectors, cables, pins, and other connecting means, or electronic parts such as a receiver that receives high-frequency signals. When the signal conductor S has the first conductor portion S1, the second connection portion (that is, the portion at the second position) of the first conductor portion S1 can be electrically and mechanically connected to a connector, a connection means, or an electronic component. In addition, the first connection portion and the second connection portion of the first conductor portion S1 are not covered by the second conductor portion S2 in the Z direction. The connection portion of at least one of the first connection portion and the second connection portion of the first conductor portion S1 corresponds to the connection portion of the first conductor portion of the signal conductor in the scope of the patent application. When the surface on the Z direction side of the at least one connecting portion is in elastic contact or sliding contact with the terminal (connection object) of the connector, the second conductor is not provided on the surface on the Z direction side of the at least one connecting portion Therefore, it is possible to prevent abrasion and damage of the second conductor portion S2 caused by elastic contact or sliding contact of the terminal of the connector.
以下,針對前述之傳輸用基板D1的製造方法進行說明。先準備介電體100。之後,如以下(1)~(3)的任一所述般,於介電體100的第1面101上形成訊號導體S或訊號導體S的一部分,如以下(4)~(6)的任一所述般,於介電體100的第2面102上形成接地導體G或接地導體G的一部分。
(1)訊號導體S僅以多晶體構成時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用公知的印刷法(例如網版印刷法、噴墨印刷法或噴霧印刷法)來印刷導電膠。
(2)訊號導體S具有第1導體部S1及第2導體部S2時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用前述公知的印刷法來印刷導電膠。
(3)訊號導體S是不包含多晶體的構造時,則於介電體100的第1面101上,使用前述公知的印刷法來印刷不包含多晶體的導體。
(4)接地導體G僅以多晶體構成時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第2面102上,使用前述公知的印刷法來印刷導電膠。
(5)接地導體G具有第1導體部G1及第2導體部G2時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第2面102上,使用前述公知的印刷法來印刷導電膠。
(6)接地導體G是不包含多晶體的構造時,則於介電體100的第2面102上,使用前述公知的印刷法來印刷不包含多晶體的導體。Hereinafter, the manufacturing method of the aforementioned transmission substrate D1 will be described. First, the
之後,將附有訊號導體S及接地導體G的一部分或全部的介電體100,放入電烤箱等的電氣式加熱調理器具或電爐內,在大氣壓下以低溫(例如250℃)數分鐘~數十分鐘,燒成導電膠。前述(1)的狀況中,所燒成的導電膠成為前述多晶體(訊號導體S)。前述(2)的狀況中,所燒成的導電膠成為前述多晶體(第2導體部S2)。前述(4)的狀況中,所燒成的導電膠成為前述多晶體(接地導體G)。前述(5)的狀況中,所燒成的導電膠成為前述多晶體(第2導體部G2)。再者,燒成時間可因應黏結劑的種類等任意變更。After that, the dielectric 100 with part or all of the signal conductor S and the ground conductor G is placed in an electric heating and conditioning appliance such as an electric oven or an electric furnace, and kept at a low temperature (for example, 250°C) under atmospheric pressure for several minutes~ After tens of minutes, the conductive adhesive is fired. In the aforementioned situation (1), the fired conductive paste becomes the aforementioned polycrystalline (signal conductor S). In the aforementioned situation (2), the fired conductive paste becomes the aforementioned polycrystal (the second conductor portion S2). In the aforementioned situation (4), the fired conductive paste becomes the aforementioned polycrystal (ground conductor G). In the aforementioned situation (5), the fired conductive paste becomes the aforementioned polycrystalline (second conductor portion G2). Furthermore, the firing time can be arbitrarily changed according to the type of adhesive, etc.
前述(2)的狀況中,於所燒成的第2導體部S2上,使用前述公知的印刷法來印刷成為第1導體部S1的導體。前述(5)的狀況中,於所燒成的第2導體部G2上,使用前述公知的印刷法來印刷成為第1導體部G1的導體。如上所述,於介電體100形成前述之任一樣態的訊號導體S及接地導體G。傳輸用基板D1具備發送部300時,將發送部300安裝於介電體100的第1面101上,電性且機械連接於訊號導體S。如上所述,製造出傳輸用基板D1。In the situation of (2) described above, the fired second conductor portion S2 is printed using the known printing method described above to become the conductor of the first conductor portion S1. In the situation of (5) above, the fired second conductor part G2 is printed using the above-mentioned known printing method to become a conductor of the first conductor part G1. As described above, the signal conductor S and the ground conductor G in any of the aforementioned states are formed on the
如上所述的傳輸用基板D1係發揮以下的技術特徵及效果。
(A)使傳輸路徑200傳輸之高頻訊號的頻率為一或複數特定頻率帶域時,可減輕該高頻訊號的傳輸損失(衰減)。其理由如下所述。
構成傳輸路徑200的訊號導體S及接地導體G的至少一方之導體的至少一部分之多晶體的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故可減輕高頻訊號的傳輸損失。
又,訊號導體S具有以多晶體構成的第2導體部S2的狀況中,高頻訊號的傳輸時,於訊號導體S中高頻訊號的電流密度變高的部分(接地導體G側的部分)以第2導體部S2構成。第2導體部S2的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在訊號導體S側可減輕高頻訊號的傳輸損失。接地導體G具有以多晶體構成的第2導體部G2的狀況中,高頻訊號的傳輸時,於接地導體G中高頻訊號的電流密度變高的部分(訊號導體S側的部分)以第2導體部G2構成。第2導體部G2的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在接地導體G側可減輕高頻訊號的傳輸損失。The above-mentioned transmission substrate D1 exerts the following technical features and effects.
(A) When the frequency of the high-frequency signal transmitted by the
(B)訊號導體S具有第1導體部S1及第2導體部S2時,可提升對於傳輸用基板D1的發送部300、前述之連接器、電子零件或連接手段的連接信賴性。其理由如下所述。
第1導體部S1係以具有比前述多晶體的直流電阻值還小之直流電阻值的素材及具有抗氧化性等之耐腐蝕性的素材的至少一方的素材所構成。因為於第1導體部S1,可電性且機械連接發送部300、連接器、電子零件或連接手段,所以,可提升發送部300、連接器、電子零件或連接手段與傳輸用基板D1的連接信賴性。
接地導體G具有第1導體部G1及第2導體部G2時,可提升傳輸用基板D1對於接地的連接信賴性。其理由如下所述。
第1導體部G1係以具有比前述多晶體的直流電阻值還小之直流電阻值的素材及具有抗氧化性等之耐腐蝕性的素材的至少一方的素材所構成。因為可使第1導體部G1接地,所以,可提升傳輸用基板D1對於接地的連接信賴性。
[實施例2](B) When the signal conductor S has the first conductor portion S1 and the second conductor portion S2, the reliability of connection with the
以下,針對包含本發明之實施例2的複數實施例相關的高頻傳輸裝置D2,一邊參照圖2A及圖2B一邊進行說明。高頻傳輸裝置D2是高頻傳輸用的基板。以下,也將高頻傳輸裝置D2稱為傳輸用基板D2。於圖2A及圖2B,揭示實施例2的傳輸用基板D2。傳輸用基板D2係傳輸路徑200’除了訊號導體S’及接地導體G(第1接地導體)之外,具備接地導體G’(第2接地導體),且訊號導體S’設置於介電體100’的內部之處不同以外,與傳輸用基板D1相同的構造。以下,針對其相異點詳細進行說明,省略與傳輸用基板D1重複的說明。再者,於圖2B也揭示Z-Z’方向。Hereinafter, the high-frequency transmission device D2 related to a plurality of embodiments including the second embodiment of the present invention will be described with reference to FIGS. 2A and 2B. The high-frequency transmission device D2 is a substrate for high-frequency transmission. Hereinafter, the high-frequency transmission device D2 is also referred to as a transmission substrate D2. 2A and 2B, the transmission substrate D2 of the second embodiment is disclosed. The transmission substrate D2 is a transmission path 200' that includes a ground conductor G'(second ground conductor) in addition to the signal conductor S'and the ground conductor G (first ground conductor), and the signal conductor S'is provided on the
傳輸用基板D2的介電體100’係多層基板,具有Z方向側的第1面101’,與Z’方向側的第2面102’。再者,為了便利說明,對於介電體100’的訊號導體S’將Z方向側的部分稱為上層部,對於介電體100’的訊號導體S’將Z’方向側的部分稱為下層部。The dielectric 100' of the transmission substrate D2 is a multilayer substrate and has a first surface 101' on the Z direction side and a second surface 102' on the Z'direction side. In addition, for convenience of description, the signal conductor S'of the dielectric body 100' is referred to as the upper layer portion in the Z direction side, and the signal conductor S'of the dielectric body 100' is referred to as the lower layer portion on the Z'direction side. unit.
傳輸用基板D2之傳輸路徑200’的訊號導體S’、接地導體G及接地導體G’構成可傳輸高頻訊號的帶狀線。以下,將使傳輸路徑200’傳輸一或複數特定頻率帶域的高頻訊號時稱為「高頻訊號的傳輸時」。傳輸路徑200’係如下所述,位於介電體100’上及介電體100’內。訊號導體S’係設置於介電體100’的內部,且從該內部的任意第1位置延伸至不同於前述第1位置的第2位置。接地導體G係設置於介電體100’的第2面102’上,沿著訊號導體S’延伸,且挾持介電體100’的下層部配置於訊號導體S’的Z’方向側(一方側)。接地導體G’係設置於介電體100’的第1面101’上,沿著訊號導體S’延伸,且挾持介電體100’的上層部配置於訊號導體S’的Z方向側(另一方側)。The signal conductor S', the ground conductor G, and the ground conductor G'of the transmission path 200' of the transmission substrate D2 constitute a strip line capable of transmitting high frequency signals. Hereinafter, when the transmission path 200' transmits a high-frequency signal of one or more specific frequency bands, it is referred to as "the transmission time of a high-frequency signal". The transmission path 200' is located on and in the dielectric body 100' as described below. The signal conductor S'is provided inside the dielectric body 100' and extends from any first position in the inside to a second position different from the aforementioned first position. The ground conductor G is provided on the second surface 102' of the dielectric body 100', extends along the signal conductor S', and the lower part of the dielectric body 100' sandwiching the dielectric body 100' is arranged on the Z'direction side (one side) of the signal conductor S' side). The ground conductor G'is disposed on the first surface 101' of the dielectric body 100', extends along the signal conductor S', and the upper layer of the dielectric body 100' is sandwiched and arranged on the Z direction side of the signal conductor S'(other One side).
訊號導體S’係其一部分或全部能以前述多晶體構成。此時,接地導體G及接地導體G’可設為以下(a)~(c)的構造。 (a)接地導體G及接地導體G’係其一部分或全部以多晶體構成。 (b)接地導體G係其一部分或全部以多晶體構成,且接地導體G’係其全部以不包含多晶體的導體構成。或者,作為相反亦可。 (c)接地導體G及接地導體G’係其全部以不包含多晶體的導體構成。 或者,訊號導體S’係其全部能以不包含多晶體的導體構成。此時,接地導體G及接地導體G’可設為以下(d)或(e)的構造。 (d)接地導體G及接地導體G’係其一部分或全部以多晶體構成。 (e)接地導體G係其一部分或全部以多晶體構成,且接地導體G’係其全部以不包含多晶體的導體構成。或者,作為相反亦可。A part or all of the signal conductor S'can be made of the aforementioned polycrystal. At this time, the ground conductor G and the ground conductor G'can be configured as the following (a) to (c). (a) Part or all of the ground conductor G and the ground conductor G'are made of polycrystalline. (b) A part or all of the ground conductor G is made of polycrystalline, and the ground conductor G'is all made of a conductor that does not contain polycrystalline. Or, the opposite is also possible. (c) The ground conductor G and the ground conductor G'are all composed of conductors that do not contain polycrystalline. Alternatively, the signal conductor S'can all be composed of conductors that do not contain polycrystals. At this time, the ground conductor G and the ground conductor G'can be configured as the following (d) or (e). (d) Part or all of the ground conductor G and the ground conductor G'are made of polycrystalline. (e) A part or all of the ground conductor G is made of polycrystalline, and the ground conductor G'is all made of a conductor that does not contain polycrystalline. Or, the opposite is also possible.
然而,高頻訊號的傳輸時,藉由表皮效應,高頻訊號的電流密度係訊號導體S’中之接地導體G側(訊號導體S’中之與接地導體G的電性耦合強)的部分、訊號導體S’中之接地導體G’側(訊號導體S’中之與接地導體G’的電性耦合強)的部分、接地導體G中之訊號導體S’側(接地導體G中之與訊號導體S’的電性耦合強)的部分及接地導體G’中之訊號導體S’側的部分(接地導體G’中之與訊號導體S’的電性耦合強的部分)變高。However, during the transmission of high-frequency signals, due to the skin effect, the current density of the high-frequency signals is the part of the signal conductor S'on the ground conductor G side (the signal conductor S'has a strong electrical coupling with the ground conductor G) , The part of the ground conductor G'side of the signal conductor S'(the strong electrical coupling between the signal conductor S'and the ground conductor G'), the signal conductor S'side of the ground conductor G (and the ground conductor G) The signal conductor S'has a strong electrical coupling) and the ground conductor G'on the signal conductor S'side (the ground conductor G'has a strong electrical coupling with the signal conductor S') becomes higher.
訊號導體S’的一部分是以多晶體構成時,訊號導體S’可設為具有第1導體部S1’及第2導體部S2’的構造、具有第1導體部S1’及第3導體部S3’的構造、或具有第1導體部S1’、第2導體部S2’及第3導體部S3’的構造。 第1導體部S1’及第2導體部S2’係除了以下之處,與傳輸用基板D1之訊號導體S的第1導體部S1、第2導體部S2相同的構造。第1導體部S1’係於Z方向的俯視中從介電體100’內部的第1位置延伸至第2位置。 第2導體部S2’係設置於第1導體部S1’的Z’方向側之面上,且於Z方向的俯視中從介電體100’內部的第1位置延伸至第2位置為佳,但是,在一或複數處斷裂亦可。也就是說,第2導體部S2’係固定於第1導體部S1’的Z’方向側之面的至少一部分上,且相對於第1導體部S1’配置於接地導體G側。 第3導體部S3’係以多晶體構成,設置於第1導體部S1’的Z方向側之面上,且於Z方向的俯視中從介電體100’內部的第1位置延伸至第2位置為佳,但是,在一或複數處斷裂亦可。也就是說,第3導體部S3’係固定於第1導體部S1’的Z方向側之面的至少一部分上,且相對於第1導體部S1’配置於接地導體G’側。 如上所述,傳輸路徑200’係設置於介電體100’的內部,故前述之「Z方向的俯視」係其對象必須注意不是藉由觀察者從傳輸用基板S2的Z方向側可現實視認。 再者,於第1導體部S1’的第1位置上的第1連接部及第2位置上的第2連接部,並未設置第2導體部S2’及/或第3導體部S3’。When a part of the signal conductor S'is made of polycrystalline, the signal conductor S'can be a structure having a first conductor part S1' and a second conductor part S2', and a first conductor part S1' and a third conductor part S3 'Structure or a structure having a first conductor portion S1', a second conductor portion S2', and a third conductor portion S3'. The first conductor portion S1' and the second conductor portion S2' have the same structure as the first conductor portion S1 and the second conductor portion S2 of the signal conductor S of the transmission substrate D1 except for the following points. The first conductor portion S1' extends from the first position to the second position inside the dielectric body 100' in a plan view in the Z direction. The second conductor portion S2' is provided on the surface on the Z'direction side of the first conductor portion S1', and preferably extends from the first position to the second position inside the dielectric body 100' in a plan view of the Z direction. However, it may be broken at one or more places. That is, the second conductor portion S2' is fixed to at least a part of the surface on the Z'direction side of the first conductor portion S1', and is arranged on the ground conductor G side with respect to the first conductor portion S1'. The third conductor portion S3' is made of polycrystalline and is provided on the surface on the Z direction side of the first conductor portion S1' and extends from the first position inside the dielectric 100' to the second position in the Z direction in a plan view. The location is good, but it can be broken at one or more places. That is, the third conductor portion S3' is fixed to at least a part of the surface on the Z direction side of the first conductor portion S1', and is arranged on the ground conductor G'side with respect to the first conductor portion S1'. As described above, the transmission path 200' is provided inside the dielectric 100', so the aforementioned "top view in the Z direction" refers to the object. It must be noted that the observer is not actually visible from the Z direction side of the transmission substrate S2 . Furthermore, the first connection portion at the first position of the first conductor portion S1' and the second connection portion at the second position are not provided with the second conductor portion S2' and/or the third conductor portion S3'.
接地導體G的一部分以多晶體構成時,可設為接地導體G具有第1導體部G1及第2導體部G2的構造。第1導體部G1、第2導體部G2係與傳輸用基板D1之接地導體G的第1導體部G1、第2導體部G2相同的構造。When a part of the ground conductor G is made of polycrystalline, the ground conductor G may have a first conductor portion G1 and a second conductor portion G2. The first conductor portion G1 and the second conductor portion G2 have the same structure as the first conductor portion G1 and the second conductor portion G2 of the ground conductor G of the transmission substrate D1.
接地導體G’的一部分以多晶體構成時,可設為接地導體G’具有第1導體部G1’及第2導體部G2’的構造。第2導體部G2’係設置於介電體100’的第1面101’上以外,與第2導體部G2相同的構造。第1導體部G1’係除了設置於第2導體部G2’之Z方向側的面上以外,與第1導體部G1相同的構造。如此,第2導體部G2’係固定於第1導體部G1’的Z’方向側之面的至少一部分上,且相對於第1導體部G1’配置於訊號導體S’側。When a part of the ground conductor G'is made of polycrystalline, the ground conductor G'may have a first conductor part G1' and a second conductor part G2'. The second conductor part G2' has the same structure as the second conductor part G2 except that it is provided on the first surface 101' of the dielectric body 100'. The first conductor portion G1' has the same structure as the first conductor portion G1 except that it is provided on the surface on the Z direction side of the second conductor portion G2'. In this way, the second conductor portion G2' is fixed to at least a part of the surface on the Z'direction side of the first conductor portion G1', and is arranged on the signal conductor S'side with respect to the first conductor portion G1'.
傳輸用基板D2更具備發送部300時,發送部300係安裝於介電體100’的第1面101’上,電性且機械連接於訊號導體S’的第1位置上的部分。訊號導體S’具有第1導體部S1’時,發送部300係電性且機械連接於第1導體部S1’的第1連接部。再者,發送部300與傳輸用基板D1相同,可省略。When the transmission substrate D2 further includes a
以下,針對前述之傳輸用基板D2的製造方法進行說明。先準備介電體100’的下層部。之後,如前述(1)~(3)及後述(7)的任一所述般,於介電體100’之下層部的Z方向側之面上形成訊號導體S,如前述(4)~(6)的任一所述般,於介電體100’之下層部的第2面102’上形成接地導體G。
(7)訊號導體S具有第1導體部S1’及第3導體部S3’時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100’之下層部的Z方向之面上,使用前述公知的印刷法來印刷成為第1導體部S1’的導體,於第1導體部S1’上,使用前述公知的印刷法來印刷導電膠。Hereinafter, the manufacturing method of the aforementioned transmission substrate D2 will be described. First, the lower part of the dielectric 100' is prepared. After that, as in any one of the aforementioned (1) to (3) and the following (7), the signal conductor S is formed on the surface on the Z direction side of the lower layer portion of the dielectric 100', as in the aforementioned (4) to As in any one of (6), the ground conductor G is formed on the second surface 102' of the lower layer portion of the
之後,將附有經(1)~(3)及(7)的任一工程及(4)~(6)的任一工程所得之訊號導體S’及接地導體G的一部分或全部的介電體100’的下層部,放入前述電氣式加熱調理器具或前述電爐內,如上所述般燒成導電膠。前述(1)的狀況中,所燒成的導電膠成為前述多晶體(訊號導體S’)。前述(2)的狀況中,所燒成的導電膠成為前述多晶體(第2導體部S2’)。前述(7)的狀況中,所燒成的導電膠成為前述多晶體(第3導體部S3’)。前述(4)的狀況中,所燒成的導電膠成為前述多晶體(接地導體G)。前述(5)的狀況中,所燒成的導電膠成為前述多晶體(第2導體部G2)。After that, a part or all of the dielectric of the signal conductor S'and the ground conductor G obtained through any of the processes of (1) to (3) and (7) and any of the processes of (4) to (6) will be attached. The lower part of the body 100' is placed in the aforementioned electric heating and conditioning appliance or the aforementioned electric furnace, and the conductive glue is fired as described above. In the aforementioned situation (1), the fired conductive paste becomes the aforementioned polycrystalline (signal conductor S'). In the aforementioned situation (2), the fired conductive paste becomes the aforementioned polycrystalline (second conductor portion S2'). In the aforementioned situation (7), the fired conductive paste becomes the aforementioned polycrystalline (third conductor portion S3'). In the aforementioned situation (4), the fired conductive paste becomes the aforementioned polycrystal (ground conductor G). In the aforementioned situation (5), the fired conductive paste becomes the aforementioned polycrystalline (second conductor portion G2).
前述(2)的狀況中,於所燒成的導電膠(第2導體部S2’)上,使用前述公知的印刷法來印刷成為第1導體部S1’的導體。於前述(2)的狀況中,訊號導體S’具有第3導體部S3’時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於第1導體部S1’上,使用前述公知的印刷法來印刷導電膠,如上所述般燒成該導電膠。所燒成的導電膠成為前述多晶體(第3導體部S3’)。前述(5)的狀況中,於所燒成的第2導體部G2上,使用前述公知的印刷法來印刷成為第1導體部G1的導體。In the aforementioned situation (2), the fired conductive paste (second conductor portion S2') is printed using the aforementioned well-known printing method to become a conductor of the first conductor portion S1'. In the situation described in (2) above, when the signal conductor S'has the third conductor portion S3', as described above, prepare a conductive paste with conductor nanoparticles as the main component, and use the aforementioned conductive paste on the first conductor portion S1' The conductive paste is printed by a known printing method, and the conductive paste is fired as described above. The fired conductive paste becomes the aforementioned polycrystalline (third conductor portion S3'). In the situation of (5) above, the fired second conductor part G2 is printed using the above-mentioned known printing method to become a conductor of the first conductor part G1.
之後,於介電體100’的下層部上形成上層部。藉此,訊號導體S’配置於介電體100’的內部。之後,如厚度(8)~(10)的任一所述般,於介電體100’的第1面101’上形成接地導體G’或接地導體G’的一部分。
(8)接地導體G’僅以多晶體構成時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100’的第1面101’上,使用前述公知的印刷法來印刷導電膠。
(9)接地導體G’具有第1導體部G1’及第2導體部G2’時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100’的第1面101’上,使用前述公知的印刷法來印刷導電膠。
(10)接地導體G’是不包含多晶體的構造時,則於介電體100’的第1面101’上,使用前述公知的印刷法來印刷不包含多晶體的導體。After that, an upper layer portion is formed on the lower layer portion of the dielectric body 100'. Thereby, the signal conductor S'is arranged inside the dielectric body 100'. Thereafter, as described in any of the thicknesses (8) to (10), the ground conductor G'or a part of the ground conductor G'is formed on the first surface 101' of the
前述(8)或(9)的工程之後,將附有接地導體G’的一部分或全部的介電體100’,放入前述電氣式加熱調理器具或前述電爐內,如上所述般燒成導電膠。前述(8)的狀況中,所燒成的導電膠成為前述多晶體(接地導體G’)。前述(9)的狀況中,所燒成的導電膠成為前述多晶體(第2導體部G2’)。於該燒成的第2導體部G2’上,使用前述公知的印刷法來印刷成為第1導體部G1’的導體。如上所述,於介電體100’形成前述之任一樣態的訊號導體S’、接地導體G及接地導體G’。傳輸用基板D2具備發送部300時,將發送部300安裝於介電體100’的第1面101’上,電性且機械連接於訊號導體S’。如上所述,製造出傳輸用基板D2。After the process of (8) or (9) above, put a part or all of the dielectric body 100' with the grounding conductor G'into the electric heating and conditioning appliance or the electric furnace, and fire it to conduct electricity as described above glue. In the aforementioned situation (8), the fired conductive paste becomes the aforementioned polycrystal (ground conductor G'). In the aforementioned situation (9), the fired conductive paste becomes the aforementioned polycrystalline (second conductor portion G2'). On the fired second conductor part G2', a conductor that becomes the first conductor part G1' is printed using the aforementioned known printing method. As described above, any of the aforementioned signal conductor S', ground conductor G, and ground conductor G'are formed in the dielectric body 100'. When the transmission substrate D2 includes the
如上所述的傳輸用基板D2係在使傳輸路徑200’傳輸之高頻訊號的頻率為一或複數特定頻率帶域時,可減輕該高頻訊號的傳輸損失(衰減)。其理由如下所述。 構成傳輸路徑200’的訊號導體S’、接地導體G及接地導體G’中的至少一個導體的至少一部分之多晶體的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故可減輕高頻訊號的傳輸損失。 又,訊號導體S’具有以多晶體構成的第2導體部S2’及/或第3導體部S3’的狀況中,高頻訊號的傳輸時,於訊號導體S’中高頻訊號的電流密度變高的部分(接地導體G側的部分及/或接地導體G’側的部分)以第2導體部S2’及/或第3導體部S3’構成。第2導體部S2’及/或第3導體部S3’的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在訊號導體S’側可減輕高頻訊號的傳輸損失。 接地導體G具有以多晶體構成的第2導體部G2的狀況中,高頻訊號的傳輸時,於接地導體G中高頻訊號的電流密度變高的部分(訊號導體S’側的部分)以第2導體部G2構成。第2導體部G2的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在接地導體G側可減輕高頻訊號的傳輸損失。 接地導體G’具有以多晶體構成的第2導體部G2’的狀況中,高頻訊號的傳輸時,於接地導體G’中高頻訊號的電流密度變高的部分(訊號導體S’側的部分)以第2導體部G2’構成。第2導體部G2’的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在接地導體G’側可減輕高頻訊號的傳輸損失。 再者,傳輸用基板D2也發揮與傳輸用基板D1的前述(B)相同的技術特徵及效果。 [實施例3]The above-mentioned transmission substrate D2 can reduce the transmission loss (attenuation) of the high-frequency signal when the frequency of the high-frequency signal transmitted by the transmission path 200' is in one or more specific frequency bands. The reason is as follows. The AC resistance value of the polycrystalline at least a part of at least one of the signal conductor S', the ground conductor G, and the ground conductor G'constituting the transmission path 200' is one or more specific frequency bands at the frequency of the transmitted high-frequency signal The domain time will be rapidly reduced, so the transmission loss of high-frequency signals can be reduced. In addition, when the signal conductor S'has the second conductor portion S2' and/or the third conductor portion S3' made of polycrystal, the current density of the high-frequency signal in the signal conductor S'changes during the transmission of the high-frequency signal. The high part (the part on the side of the ground conductor G and/or the part on the side of the ground conductor G') is constituted by the second conductor portion S2' and/or the third conductor portion S3'. The AC resistance of the second conductor portion S2' and/or the third conductor portion S3' will decrease sharply when the frequency of the transmitted high-frequency signal is one or more specific frequency bands, so it can be reduced on the signal conductor S'side Transmission loss of high-frequency signals. In a situation where the ground conductor G has a second conductor portion G2 made of polycrystal, during transmission of a high-frequency signal, the portion of the ground conductor G where the current density of the high-frequency signal increases (the portion on the signal conductor S'side) is 2 conductor part G2 structure. The AC resistance value of the second conductor part G2 decreases sharply when the frequency of the transmitted high-frequency signal is one or more specific frequency bands, so the transmission loss of the high-frequency signal can be reduced on the ground conductor G side. In a situation where the ground conductor G'has a second conductor portion G2' made of polycrystal, during the transmission of high-frequency signals, the current density of the high-frequency signal in the ground conductor G'increases (the portion on the signal conductor S'side) ) Is constituted by the second conductor part G2'. The AC resistance value of the second conductor part G2' decreases sharply when the frequency of the transmitted high-frequency signal is one or a plurality of specific frequency bands, so the transmission loss of the high-frequency signal can be reduced on the ground conductor G'side. Furthermore, the transfer substrate D2 also exhibits the same technical features and effects as the aforementioned (B) of the transfer substrate D1. [Example 3]
以下,針對包含本發明之實施例3的複數實施例相關的高頻傳輸裝置D3,一邊參照圖3A及圖3B一邊進行說明。高頻傳輸裝置D3是高頻傳輸用的基板。以下,也將高頻傳輸裝置D3稱為傳輸用基板D3。於圖3A及圖3B,揭示實施例3的傳輸用基板D3。傳輸用基板D3係除了傳輸路徑200”具備訊號導體S”及一對接地導體G”之處以外,與傳輸用基板D1相同的構造。以下,針對其相異點詳細進行說明,省略與傳輸用基板D1重複的說明。再者,於圖3B除了Z-Z’方向,也揭示訊號導體S”的短邊方向即X-X’方向。Hereinafter, the high-frequency transmission device D3 related to a plurality of embodiments including Embodiment 3 of the present invention will be described with reference to FIGS. 3A and 3B. The high-frequency transmission device D3 is a substrate for high-frequency transmission. Hereinafter, the high-frequency transmission device D3 is also referred to as a transmission substrate D3. 3A and 3B, the transmission substrate D3 of the third embodiment is disclosed. The transmission substrate D3 has the same structure as the transmission substrate D1 except that the
傳輸路徑200”的訊號導體S”及一對接地導體G”構成可傳輸高頻訊號的共平面線。以下,將使傳輸路徑200”傳輸一或複數特定頻率帶域的高頻訊號時稱為「高頻訊號的傳輸時」。傳輸路徑200”係如下所述,位於介電體100上。訊號導體S”係設置於介電體100的第1面101上,從第1位置延伸至第2位置。一對接地導體G”係包含第1接地導體G”及第2接地導體G”。第1接地導體G”係設置於介電體100的第1面101上,沿著訊號導體S”延伸,且隔開間隔配置於訊號導體S”的X方向側(一方側)。第2接地導體G”係設置於介電體100的第1面101上,沿著訊號導體S”延伸,且於訊號導體S”的X’方向側(另一方側)隔開間隔配置。The signal conductor S" of the
訊號導體S”係其一部分或全部能以多晶體構成。此時,第1接地導體G”及第2接地導體G”設為以下(a)~(c)的構造為佳。 (a)第1接地導體G”及第2接地導體G”係其一部分或全部以多晶體構成。 (b)第1接地導體G”係其一部分或全部以多晶體構成,且第2接地導體G”係其全部以不包含多晶體的導體構成。或者,作為相反亦可。 (c)第1接地導體G”及第2接地導體G”係其全部以不包含多晶體的導體構成。 或者,訊號導體S”係其全部能以不包含多晶體的導體構成。此時,第1接地導體G”及第2接地導體G”可設為以下(d)或(e)的構造。 (d)第1接地導體G”及第2接地導體G”係其一部分或全部以多晶體構成。 (e)第1接地導體G”係其一部分或全部以多晶體構成,且第2接地導體G”係其全部以不包含多晶體的導體構成。或者,作為相反亦可。A part or all of the signal conductor S" can be formed of polycrystalline. In this case, the first ground conductor G" and the second ground conductor G" should preferably have the following structures (a) to (c). (a) Part or all of the first ground conductor G" and the second ground conductor G" are made of polycrystals. (b) The first ground conductor G" is partially or entirely made of polycrystalline, and the second ground conductor G" is all made of a conductor that does not include polycrystalline. Or, the opposite is also possible. (c) The first ground conductor G" and the second ground conductor G" are all composed of conductors that do not include polycrystalline. Alternatively, all of the signal conductor S" can be constituted by a conductor that does not include polycrystalline. In this case, the first ground conductor G" and the second ground conductor G" can have the following structure (d) or (e). (d) Part or all of the first ground conductor G" and the second ground conductor G" are made of polycrystals. (e) The first ground conductor G" is partially or entirely made of polycrystalline, and the second ground conductor G" is all made of a conductor that does not include polycrystalline. Or, the opposite is also possible.
然而,高頻訊號的傳輸時,藉由表皮效應,高頻訊號的電流密度係訊號導體S”中之第1接地導體G”側的部分(訊號導體S”中之與第1接地導體G”的電性耦合強的部分)、訊號導體S”中之第2接地導體G”側的部分(訊號導體S”中之與第2接地導體G”的電性耦合強的部分)、及第1、第2接地導體G”中之訊號導體S”側的部分(第1、第2接地導體G”中之與訊號導體S”的電性耦合強的部分)會變高。However, during the transmission of high-frequency signals, due to the skin effect, the current density of the high-frequency signals is the part of the signal conductor S" on the side of the first ground conductor G" (the signal conductor S" and the first ground conductor G" The part with strong electrical coupling), the part on the side of the second ground conductor G” of the signal conductor S” (the part of the signal conductor S” that has strong electrical coupling with the second ground conductor G”), and the first The part on the signal conductor S" side of the second ground conductor G" (the part of the first and second ground conductors G" that has a strong electrical coupling with the signal conductor S") will increase.
訊號導體S”的一部分是以多晶體構成時,訊號導體S”可設為具有第1導體部S1”及第2導體部S2”的構造、具有第1導體部S1”及第3導體部S3”的構造、或具有第1導體部S1”、第2導體部S2”及第3導體部S3”的構造。
第1導體部S1”係設置於介電體100的第1面101上,且從第1位置延伸至第2位置以外,與傳輸用基板D1的第1導體部S1相同的構造。
第2導體部S2”係以多晶體構成。第2導體部S2”係設置於介電體100的第1面101上,固定於第1導體部S1”的X方向側之面的至少一部分上,且相對於第1導體部S1”配置於第1接地導體G”側。第2導體部S2”係沿著第1導體部S1”的X方向側之面,從第1位置延伸至第2位置為佳,但是,在一或複數處斷裂亦可。也就是說,第2導體部S2”構成高頻訊號的傳輸時,訊號導體S”中之與第1接地導體G”的電性耦合強的部分(高頻訊號的電流密度高的部分)。
第3導體部S3”係以多晶體構成。第3導體部S3”係設置於介電體100的第1面101上,固定於第1導體部S1”的X’方向側之面的至少一部分上,且相對於第1導體部S1”配置於第2接地導體G”側。第3導體部S3”係沿著第1導體部S1”的X’方向側之面,從第1位置延伸至第2位置為佳,但是,在一或複數處斷裂亦可。也就是說,第3導體部S3”構成高頻訊號的傳輸時,訊號導體S”中之與第2接地導體G”的電性耦合強的部分(高頻訊號的電流密度高的部分)。
再者,第1導體部S1”的第1連接部及第2連接部,係於Z方向中並未被第2導體部S2”及第3導體部S3”覆蓋。因此,第1導體部S1”的第1連接部及第2連接部的至少一方的連接部係相當於申請專利範圍的訊號導體之第1導體部的連接部。該至少一方的連接部的Z方向側之面,藉由連接器的端子(連接對象)彈性接觸或滑動接觸時,於至少一方的連接部之Z方向側的面上,並未設置第2導體部S2”及第3導體部S3”,所以,可防止連接器的端子的彈性接觸或滑動接觸所導致之第2導體部S2”及第3導體部S3”的磨耗及破損。When a part of the signal conductor S" is made of polycrystalline, the signal conductor S" can be configured to have a first conductor part S1" and a second conductor part S2", and a first conductor part S1" and a third conductor part S3 "Or a structure having a first conductor part S1", a second conductor part S2", and a third conductor part S3".
The first conductor part S1" is provided on the
一對接地導體G”的至少一方之導體的一部分以多晶體構成時,可設為至少一方的導體具有第1導體部G1”及第2導體部G2”的構造。
第1、第2接地導體G”的第1導體部G1”係在介電體100的第1面101上,沿著訊號導體S”延伸,且於訊號導體S”的X方向側、X’方向側,隔開間隔配置。第1、第2接地導體G”的第2導體部G2”係設置於介電體100的第1面101上,固定於第1、第2接地導體G”的第1導體部G1”的X’方向側之面、X方向側之面的至少一部分上,且配置成比第1導體部G1”更靠訊號導體S”側。第1、第2接地導體G”的第2導體部G2”係於訊號導體S”的X方向側、X’方向側,隔開間隔配置。第1、第2接地導體G”的第2導體部G2”係沿著第1導體部G1”的X’方向側之面、X方向側之面,從第1位置延伸至第2位置為佳,但是,在一或複數處斷裂亦可。也就是說,第1、第2接地導體G”的第2導體部G2”構成高頻訊號的傳輸時,第1、第2接地導體G”的第2導體部G2”中之與訊號導體S”的電性耦合強的部分(高頻訊號的電流密度高的部分。When a part of at least one conductor of the pair of ground conductors G" is formed of polycrystalline, it can be configured that at least one conductor has a first conductor part G1" and a second conductor part G2".
The first conductor portion G1" of the first and second ground conductors G" is on the
以下,針對前述之傳輸用基板D3的製造方法進行說明。先準備介電體100。之後,如以下(1)~(5)的任一所述般,於介電體100的第1面101上形成訊號導體S”,如以下(6)~(8)的任一所述般,於介電體100的第2面102上形成接地導體G”。
(1)訊號導體S”僅以多晶體構成時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用公知的印刷法(例如網版印刷法、噴墨印刷法或噴霧印刷法)來印刷導電膠。
(2)訊號導體S”具有第1導體部S1”及第2導體部S2”時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用前述公知的印刷法,印刷成為第1導體部S1”的導體,及於其X方向側印刷成為第2導體部S2”的導電膠。
(3)訊號導體S”具有第1導體部S1”及第3導體部S3”時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用前述公知的印刷法,印刷成為第1導體部S1”的導體,及於其X’方向側印刷成為第3導體部S3”的導電膠。
(4)訊號導體S”具有第1導體部S1”、第2導體部S2”及第3導體部S3”時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用前述公知的印刷法,印刷成為第1導體部S1”的導體,於其X方向側印刷成為第2導體部S2”的導電膠,及於其X’方向側印刷成為第3導體部S3”的導電膠。
(5)訊號導體S”是不包含多晶體的構造時,則於介電體100的第1面101上,使用前述公知的印刷法來印刷不包含多晶體的導體。
(6)第1接地導體G”及/或第2接地導體G”僅以多晶體構成時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用前述公知的印刷法來印刷導電膠。
(7)第1接地導體G”及/或第2接地導體G”具有第1導體部G1”及第2導體部G2”時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用前述公知的印刷法,印刷成為第1導體部G1”的導體,及於其X’方向側及/或X方向側印刷成為第2導體部G2”的導電膠。
(8)第1接地導體G”及/或第2接地導體G”是不包含多晶體的構造時,則於介電體100的第2面102上,使用前述公知的印刷法來印刷不包含多晶體的導體。Hereinafter, the manufacturing method of the aforementioned transmission substrate D3 will be described. First, the
之後,將附有訊號導體S”及接地導體G”的介電體100,放入前述電氣式加熱調理器具或前述電爐內,如上所述般燒成導電膠。前述(1)的狀況中,所燒成的導電膠成為前述多晶體(訊號導體S”)。前述(2)的狀況中,所燒成的導電膠成為前述多晶體(第2導體部S2”)。前述(3)的狀況中,所燒成的導電膠成為前述多晶體(第3導體部S3”)。前述(4)的狀況中,所燒成之X方向側、X’方向側的導電膠成為前述多晶體(第2導體部S2”、第3導體部S3”)。前述(6)的狀況中,所燒成的導電膠成為前述多晶體(第1接地導體G”及/或第2接地導體G”)。前述(7)的狀況中,所燒成的導電膠成為前述多晶體(第1接地導體G”及/或第2接地導體G”的第2導體部G2”)。如上所述,於介電體100形成前述之任一樣態的訊號導體S”及一對接地導體G”。傳輸用基板D3具備發送部300時,將發送部300安裝於介電體100的第1面101上,電性且機械連接於訊號導體S”。如上所述,製造出傳輸用基板D3。After that, the
如上所述的傳輸用基板D3係在傳輸於傳輸路徑200”之高頻訊號的頻率為一或複數特定頻率帶域時,可減輕該高頻訊號的傳輸損失(衰減)。其理由如下所述。
構成傳輸路徑200”的訊號導體S”、第1接地導體G”及第2接地導體G”中的至少一個導體的至少一部分之多晶體的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故可減輕高頻訊號的傳輸損失。
又,訊號導體S”具有以多晶體構成的第2導體部S2”及/或第3導體部S3”的狀況中,高頻訊號的傳輸時,於訊號導體S”中高頻訊號的電流密度變高的部分(第1接地導體G”側的部分及/或第2接地導體G”側的部分)以第2導體部S2”及/或第3導體部S3”構成。第2導體部S2”及/或第3導體部S3”的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在訊號導體S”側可減輕高頻訊號的傳輸損失。
第1接地導體G”及/或第2接地導體G”具有以多晶體構成的第2導體部G2”的狀況中,高頻訊號的傳輸時,於第1接地導體G”及/或第2接地導體G”中高頻訊號的電流密度變高的部分(訊號導體S”側的部分)以第2導體部G2”構成。第2導體部G2”的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在第1接地導體G”及/或第2接地導體G”側可減輕高頻訊號的傳輸損失。
再者,傳輸用基板D3也發揮與傳輸用基板D1的前述(B)相同的技術特徵及效果。
[實施例4]The above-mentioned transmission substrate D3 can reduce the transmission loss (attenuation) of the high-frequency signal when the frequency of the high-frequency signal transmitted on the
以下,針對包含本發明之實施例4的複數實施例相關的高頻傳輸裝置D4,一邊參照圖4A及圖4B一邊進行說明。高頻傳輸裝置D4是高頻傳輸用的基板。以下,也將高頻傳輸裝置D4稱為傳輸用基板D4。於圖4A及圖4B,揭示實施例4的傳輸用基板D4。傳輸用基板D4係除了傳輸路徑200”’具備一對訊號導體S”’之處以外,與傳輸用基板D1相同的構造。以下,針對其相異點詳細進行說明,省略與傳輸用基板D1重複的說明。再者,於圖4B除了Z-Z’方向,也揭示訊號導體S”’的短邊方向即X-X’方向。Hereinafter, the high-frequency transmission device D4 related to plural embodiments including the fourth embodiment of the present invention will be described with reference to FIGS. 4A and 4B. The high-frequency transmission device D4 is a substrate for high-frequency transmission. Hereinafter, the high-frequency transmission device D4 is also referred to as a transmission substrate D4. 4A and 4B, the transmission substrate D4 of the fourth embodiment is disclosed. The transmission substrate D4 has the same structure as the transmission substrate D1 except that the
傳輸路徑200”’係如下所述,位於介電體100上。傳輸路徑200”’的一對訊號導體S”’係設置於介電體100的第1面101上,從介電體100的第1面101的第1位置延伸至第2位置,且隔開間隔配置於X-X’方向。一對訊號導體S”’係包含可傳輸高頻訊號之成為差動對(Differential pair)的第1訊號導體S”’及第2訊號導體S”’。第1訊號導體S”’係其一部分或全部能以多晶體構成。此時,第2訊號導體S”’係其一部分或全部以多晶體構成,或其全部以不包含多晶體的導體構成為佳。或者,第1訊號導體S”’係其全部能以不包含多晶體的導體構成。此時,第2訊號導體S”’係其一部分或全部以多晶體構成為佳。以下,將使第1訊號導體S”’及第2訊號導體S”’傳輸一或複數特定頻率帶域的高頻訊號時稱為「高頻訊號的傳輸時」。The
然而,高頻訊號的傳輸時,藉由表皮效應,高頻訊號的電流密度係第1訊號導體S”’中之第2訊號導體S”’側的部分(第1訊號導體S”’中之與第2訊號導體S”’的電性耦合強的部分)及第2訊號導體S”’中之第1訊號導體S”’側的部分(第2訊號導體S”’中之與第1訊號導體S”’的電性耦合強的部分)會變高。However, during the transmission of high-frequency signals, due to the skin effect, the current density of the high-frequency signals is the part of the first signal conductor S”' on the second signal conductor S”' side (the first signal conductor S”' The part with strong electrical coupling with the second signal conductor S”') and the part on the side of the first signal conductor S”' of the second signal conductor S”' (the part of the second signal conductor S”' and the first signal The portion of the conductor S"' with strong electrical coupling) will become higher.
第1訊號導體S”’及/或第2訊號導體S”’的一部分以多晶體構成時,可設為具有第1導體部S1”’及第4導體部S4”’的構造。
第1訊號導體S”’及/或第2訊號導體S”’的第1導體部S1”’係設置於介電體100的第1面101上,且從第1位置延伸至第2位置以外,與傳輸用基板D1的第1導體部S1相同的構造。
第1訊號導體S”’及/或第2訊號導體S”’的第4導體部S4”’係以多晶體構成。
第1訊號導體S”’的第4導體部S4”’係設置於介電體100的第1面101上,固定於第1訊號導體S”’的第1導體部S1”’的X’方向側之面的至少一部分上,且相對於該第1導體部S1”’配置於第2訊號導體S”’側。如此,第1訊號導體S”’的第4導體部S4”’構成高頻訊號的傳輸時,第1訊號導體S”’中之與第2訊號導體S”’的電性耦合強的部分(高頻訊號的電流密度高的部分)。第1訊號導體S”’的第4導體部S4”’係沿著第1訊號導體S”’的第1導體部S1”’的X’方向側之面,從第1位置延伸至第2位置為佳,但是,在一或複數處斷裂亦可。
第2訊號導體S”’的第4導體部S4”’係設置於介電體100的第1面101上,固定於第2訊號導體S”’的第1導體部S1”’的X方向側之面的至少一部分上,且相對於該第1導體部S1”’配置於第1訊號導體S”’側。如此,第2訊號導體S”’的第4導體部S4”’構成高頻訊號的傳輸時,第2訊號導體S”’中之與第1訊號導體S”’的電性耦合強的部分(高頻訊號的電流密度高的部分。第2訊號導體S”’的第4導體部S4”’係沿著第2訊號導體S”’的第1導體部S1”’的X方向側之面,從第1位置延伸至第2位置為佳,但是,在一或複數處斷裂亦可。
再者,第1導體部S1”’的第1連接部及第2連接部,係於Z方向中並未被第4導體部S4”’覆蓋。因此,第1導體部S1”’的第1連接部及第2連接部的至少一方的連接部係相當於申請專利範圍的訊號導體之第1導體部的連接部。該至少一方的連接部的Z方向側之面,藉由連接器的端子(連接對象)彈性接觸或滑動接觸時,於至少一方的連接部之Z方向側的面上,並未設置第4導體部S4”’,所以,可防止連接器的端子的彈性接觸或滑動接觸所導致之第4導體部S4”’的磨耗及破損。When a part of the first signal conductor S"' and/or the second signal conductor S"' is made of polycrystalline, it may have a structure having a first conductor portion S1"' and a fourth conductor portion S4"'.
The first conductor portion S1"' of the first signal conductor S"' and/or the second signal conductor S"' is provided on the
以下,針對前述之傳輸用基板D4的製造方法進行說明。先準備介電體100。之後,如以下(1)或(2)所述般,於介電體100的第1面101上形成第1訊號導體S”’,如以下(3)或(4)所述般,於介電體100的第1面101上形成第2訊號導體S”’。
(1)第1訊號導體S”’僅以多晶體構成時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用公知的印刷法(例如網版印刷法、噴墨印刷法或噴霧印刷法)來印刷導電膠。
(2)第1訊號導體S”’具有第1導體部S1”’及第4導體部S4”’時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用前述公知的印刷法,印刷成為第1導體部S1”’的導體,及於其X’方向側印刷成為第4導體部S4”’的導電膠。
(3)第2訊號導體S”’僅以多晶體構成時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用公知的印刷法(例如網版印刷法、噴墨印刷法或噴霧印刷法)來印刷導電膠。
(4)第2訊號導體S”’具有第1導體部S1”’及第4導體部S4”’時,如上所述,準備以導體奈米粒子作為主成分的導電膠,於介電體100的第1面101上,使用前述公知的印刷法,印刷成為第1導體部S1”’的導體,及於其X方向側印刷成為第4導體部S4”’的導電膠。Hereinafter, the manufacturing method of the aforementioned transmission substrate D4 will be described. First, the
之後,將附有一對訊號導體S”’的介電體100,放入前述電氣式加熱調理器具或前述電爐內,如上所述般燒成導電膠。前述(1)的狀況中,所燒成的導電膠成為前述多晶體(第1訊號導體S”’)。前述(2)的狀況中,所燒成的導電膠成為前述多晶體(第1訊號導體S”’的第4導體部S4”’)。前述(3)的狀況中,所燒成的導電膠成為前述多晶體(第2訊號導體S”’)。前述(4)的狀況中,所燒成的導電膠成為前述多晶體(第2訊號導體S”’的第4導體部S4”’)。如上所述,於介電體100形成前述之任一樣態的一對訊號導體S”’。傳輸用基板D4具備發送部300時,將發送部300安裝於介電體100的第1面101上,電性且機械連接於一對訊號導體S”’。如上所述,製造出傳輸用基板D4。After that, the
如上所述的傳輸用基板D4係在傳輸於傳輸路徑200”’之高頻訊號的頻率為一或複數特定頻率帶域時,可減輕該高頻訊號的傳輸損失(衰減)。其理由如下所述。
構成傳輸路徑200”’的一對訊號導體S”’中的至少一方之導體的至少一部分之多晶體的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故可減輕高頻訊號的傳輸損失。
又,第1訊號導體S”’及/或第2訊號導體S”’具有以多晶體構成的第4導體部S4”’的狀況中,高頻訊號的傳輸時,於第1訊號導體S”’及/或第2訊號導體S”’中高頻訊號的電流密度變高的部分(第2訊號導體S”’及/或第1訊號導體S”’側的部分)以第4導體部S4”’構成。第1訊號導體S”’及/或第2訊號導體S”’的第4導體部S4”’的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在第1訊號導體S”’及/或第2訊號導體S”’側可減輕高頻訊號的傳輸損失。
再者,傳輸用基板D4也發揮與傳輸用基板D1的前述(B)相同的技術特徵及效果。
[實施例5]The above-mentioned transmission substrate D4 can reduce the transmission loss (attenuation) of the high-frequency signal when the frequency of the high-frequency signal transmitted on the
以下,針對包含本發明之實施例5的複數實施例相關的高頻傳輸裝置D5,一邊參照圖5、圖6A及圖6B一邊進行說明。高頻傳輸裝置D5是高頻傳輸用的連接器。以下,也將高頻傳輸裝置D5稱為連接器D5。於圖5揭示實施例5的連接器D5的概略圖,於圖6A及圖6B揭示實施例5的連接器D5是同軸連接器時的其他實施例。再者,於圖5及圖6A,揭示Z-Z’方向及Y-Y’方向,於圖6B揭示Z-Z’方向及X-X’方向。Z-Z’方向係相當於連接器D5的高度方向,Y-Y’方向係大略正交於Z-Z’方向,X-X’方向係大略正交於Z-Z’方向及Y-Y’方向。Hereinafter, the high-frequency transmission device D5 related to a plurality of embodiments including Embodiment 5 of the present invention will be described with reference to FIGS. 5, 6A, and 6B. The high-frequency transmission device D5 is a connector for high-frequency transmission. Hereinafter, the high-frequency transmission device D5 is also referred to as a connector D5. Fig. 5 shows a schematic diagram of the connector D5 of the embodiment 5, and Figs. 6A and 6B show other embodiments when the connector D5 of the embodiment 5 is a coaxial connector. Furthermore, in FIGS. 5 and 6A, the Z-Z' direction and the Y-Y' direction are disclosed, and in FIG. 6B, the Z-Z' direction and the X-X' direction are disclosed. The Z-Z' direction is equivalent to the height direction of the connector D5, the Y-Y' direction is roughly perpendicular to the Z-Z' direction, and the X-X' direction is roughly perpendicular to the Z-Z' direction and Y-Y 'direction.
連接器D5係具備絕緣樹脂製的體部即介電體400,與可傳輸高頻訊號的傳輸路徑500。以下,將使傳輸路徑500傳輸一或複數特定頻率帶域的高頻訊號時稱為「高頻訊號的傳輸時」。傳輸路徑500具備可傳輸高頻訊號的訊號導體500S與接地導體500G(第1接地導體)。傳輸路徑500的訊號導體500S係其至少一部分被介電體400保持之連接器D5的端子。也就是說,訊號導體500S的至少一部分位於介電體400內。傳輸路徑500的接地導體500G係收容保持保持了訊號導體500S之介電體400的連接器D5的外殼。接地導體500G係沿著所收容之訊號導體500S的至少一部分延伸。The connector D5 includes a
訊號導體500S係其一部分或全部能以前述多晶體構成。此時,接地導體500G係其一部分或全部以多晶體構成,或其全部以不包含前述多晶體的導體構成為佳。或者,訊號導體500S係其全部能以不包含前述多晶體的導體構成。此時,接地導體500G係其一部分或全部以前述多晶體構成為佳。A part or all of the
訊號導體500S的一部分以多晶體構成時,可設為訊號導體500S具有第1導體部510S及第2導體部520S的構造。第1導體部510S係端子本體,以具有比前述多晶體的直流電阻值還小之直流電阻值的素材及具有抗氧化性等之耐腐蝕性的素材的至少一方的素材所構成。第1導體部510S係例如以金屬板等構成。When a part of the
第1導體部510S係具有前端部511S、中間部512S、尾端部513S。中間部512S係延伸於Y-Y’方向,且其至少一部分被介電體400保持為佳。前端部511S係從中間部512S延伸於Y方向,且從介電體400突出或露出即可。前端部511S係第1導體部510S的第1連接部,可接觸於未圖示之對方連接器的端子。尾端部513S係從中間部512S延伸包含Y’方向及Z’方向的至少一方的方向成分的方向,且從介電體400突出或露出即可。尾端部513S係第1導體部510S的第2連接部,可電性且機械連接於未圖示之基板或纜線的訊號導體。
第2導體部520S係以前述多晶體構成,且設置於第1導體部510S的至少一部分之外周面上,並且相對於第1導體部510S配置於接地導體500G側。例如,第2導體部520S係如圖5所示,設置於第1導體部510S之中間部512S的外周面,且於Z-Z’方向中剖面圖呈大略環狀體亦可。The
接地導體500G的一部分以多晶體構成時,可設為接地導體500G具有第1導體部510G及第2導體部520G的構造。
第1導體部510G係外殼本體,以具有比前述多晶體的直流電阻值還小之直流電阻值的素材及具有抗氧化性等之耐腐蝕性的素材的至少一方的素材所構成。第1導體部510G係例如以金屬板等構成。
第2導體部520G係以前述多晶體構成,且設置於第1導體部510G的至少一部分之內周面上,並且相對於第1導體部510G配置於訊號導體500S側。例如如圖5所示,第1導體部510G具有延伸於Y-Y’方向的筒部時,第2導體部520G係設置於第1導體部510G之筒部的內周面,且於Z-Z’方向中剖面圖呈大略環狀體亦可。
第1導體部510G係更具有未被第2導體部520G覆蓋的連接部亦可。該第1導體部510G的連接部係例如外殼本體的腳部或外殼本體之Y’方向的端部等,可連接於前述基板或纜線的接地導體為佳。When a part of the
連接器D5係如圖6A及圖6B所示,作為同軸連接器亦可。此時,訊號導體500S及接地導體500G構成可傳輸高頻訊號的同軸線。The connector D5 is shown in Fig. 6A and Fig. 6B, and can also be used as a coaxial connector. At this time, the
訊號導體500S係被介電體400保持之連接器D5的端子,與介電體400一起被收容於接地導體500G內,成為同軸線的中心導體。具體來說,該訊號導體500S的第1導體部510S可設為以下的(a)~(b)的任一構造。
(a)如圖6A及圖6B所示,中間部512S係延伸於Y-Y’方向的筒狀。前端部511S係具有從中間部512S延伸於Y方向的一對臂部(圖示為一個)。尾端部513S係從中間部512S延伸於Y’方向的大略L字狀的板子。此時,前端部511S之臂部的內面為第1導體部510S的第1連接部,尾端部513S的後端部為第1導體部510S的第2連接部。第1導體部510S的第1連接部係可彈性接觸於***臂部之間的未圖示之對方連接器的端子之前端部的部分,第1導體部510S的第2連接部係可電性且機械連接未圖示之基板的部分。
(b)第1導體部510S的前端部511S及中間部512S係延伸於Y-Y’方向之直線狀的棒子或平板,第1導體部510S的尾端部513S係從中間部512S延伸於Y’方向之大略L字狀的棒子或板子。此時,前端部511S的外周面為第1導體部510S的第1連接部,尾端部513S的後端部為第1導體部510S的第2連接部。
(c)除了尾端部513S不是大略L字狀的板子,是延伸於Y’方向的直線狀以外,第1導體部510S係與前述(a)的構造相同的構造。
(d)除了尾端部513S不是大略L字狀的板子,是延伸於Y’方向的直線狀以外,第1導體部510S係與前述(b)的構造相同的構造。
再者,(c)及(d)的狀況中,第1導體部510S的第2連接部並不是連接於基板,而是可連接於纜線等的部分。The
第1導體部510S是前述(a)或(c)的構造時,第2導體部520S係設置於前端部511S之臂部的外面、中間部512S的外周面及尾端部513S的第2連接部以外之部分的外周面上,或中間部512S的外周面及尾端部513S的第2連接部以外之部分的外周面上。前者的狀況中,前端部511S之臂部的內面及中間部512S的內周面,並未被第2導體部520S覆蓋。後者的狀況中,前端部511S之臂部的內面、前端部511S之臂部的外面及中間部512S的內周面,並未被第2導體部520S覆蓋。
任一樣態的狀況中,訊號導體500S的前端部511S之臂部的第1連接部都未被第2導體部520S覆蓋。該訊號導體500S之前端部511S的第1連接部係相當於申請專利範圍的訊號導體之第1導體部的連接部。藉由訊號導體500S之前端部511S的臂部係在其之間***對方連接器的端子的前端部,彈性接觸於該端子的前端部,但是,於訊號導體500S的前端部511S之臂部的第1連接部上,並未設置第2導體部520S,所以,可防止對方連接器的端子的前端部所導致之第2導體部520S的磨耗及破損。訊號導體500S的前端部511S之臂部的外面也未被第2導體部520S覆蓋時,藉由訊號導體500S的前端部511S的臂部彈性變形,第2導體部520S不會破損。When the
第1導體部510S是前述(b)或(d)的構造時,第2導體部520S係設置於前端部511S之除了第1連接部以外之部分的外周面、中間部512S的外周面及尾端部513S之除了第2連接部以外之部分的外周面上。
此時,訊號導體500S的前端部511S的第1連接部未被第2導體部520S覆蓋。也就是說,該訊號導體500S之前端部511S的第1連接部係相當於申請專利範圍的訊號導體之第1導體部的連接部。訊號導體500S之前端部511S的第1連接部,藉由對方連接器的端子而彈性接觸或滑動接觸,但是,於訊號導體500S的前端部511S的第1連接部上,並未設置第2導體部520S,所以,可防止對方連接器的端子的彈性接觸或滑動接觸所導致之第2導體部520S的磨耗及破損。When the
接地導體500G係收容保持介電體400的連接器D5之筒狀的外殼,沿著同軸線的中心導體的至少一部分延伸,成為該同軸線的外側導體。接地導體500G的第1導體部510S是前述(a)或(c)的構造時,第1導體部510G作為側視圖為大略L字狀的筒管為佳(參照圖6A及圖6B)。第1導體部510S是前述(b)或(d)的構造時,第1導體部510G作為延伸於Y-Y’方向之直線狀的筒管為佳。任一狀況中,第1導體部510G係至少於Z-Z’方向中為大略環狀為佳。Z-Z’方向係相當於申請專利範圍的正交方向。The
接地導體500G的第2導體部520G係設置於前述任一樣態的第1導體部510G之一部分的內周面的筒管,或設置於前述任一樣態的第1導體部510G之內周面的大略全區域的筒管。任一樣態中,第2導體部520G也至少於Z-Z’方向中為大略環狀,相對於第1導體部510G位於訊號導體500S側。The
以下,針對前述之連接器D5的製造方法進行說明。首先,如以下(1)~(3)的任一所述般取得訊號導體500S。
(1)訊號導體500S僅以多晶體構成時,如上所述,準備以導體奈米粒子作為主成分的導電膠,將導電膠填充於未圖示的模具,將該模具以前述電氣式加熱調理器具或前述電爐如上所述般進行加熱,燒成導電膠。之後,從模具卸除所燒成的導電膠。該燒成的導電膠成為前述多晶體(訊號導體500S)。
(2)訊號導體500S具有第1導體部510S及第2導體部520S時,準備第1導體部510S。然後,如上所述,準備以導體奈米粒子作為主成分的導電膠,於第1導體部510S的至少一部分的外周面上,塗布、噴吹或印刷印刷導電膠。之後,將附有導電膠的第1導體部510S,放入前述電氣式加熱調理器具或前述電爐內,如上所述般加熱以燒成導電膠。所燒成的導電膠成為前述多晶體(第2導體部520S)。
(3)訊號導體500S是不包含多晶體的構造時,則使用公知的端子的製造方法來取得訊號導體500S。Hereinafter, the manufacturing method of the aforementioned connector D5 will be described. First, the
接著,如以下(4)~(6)的任一所述般取得接地導體500G。
(4)接地導體500G僅以多晶體構成時,如上所述,準備以導體奈米粒子作為主成分的導電膠,將導電膠填充於未圖示的模具,將該模具以前述電氣式加熱調理器具或前述電爐如上所述般進行加熱,燒成導電膠。之後,從模具卸除所燒成的導電膠。該燒成的導電膠成為前述多晶體(接地導體500G)。
(5)接地導體500G具有第1導體部510G及第2導體部520G時,準備第1導體部510G。然後,如上所述,準備以導體奈米粒子作為主成分的導電膠,於第1導體部510G的至少一部分的內周面上,塗布、噴吹或印刷印刷導電膠。之後,將附有導電膠的第1導體部510G,放入前述電氣式加熱調理器具或前述電爐內,如上所述般加熱以燒成導電膠。所燒成的導電膠成為前述多晶體(第2導體部520G)。
(6)接地導體500G是不包含多晶體的構造時,則使用公知的外殼的製造方法來取得接地導體500G。Next, the
之後,將訊號導體500S***介電體400的孔部,使介電體400保持訊號導體500S。或者,將訊號導體500S***成形於樹脂,使介電體400保持訊號導體500S。之後,使接地導體500G內收容、保持介電體400。如此,製造出連接器D5。After that, the
如上所述的連接器D5係發揮以下的技術特徵及效果。
(A)使傳輸路徑500傳輸之高頻訊號的頻率為一或複數特定頻率帶域時,可減輕該高頻訊號的傳輸損失(衰減)。其理由如下所述。
構成傳輸路徑500的訊號導體500S及接地導體500G的至少一方之導體的至少一部分之多晶體的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故可減輕高頻訊號的傳輸損失。
又,訊號導體500S具有以多晶體構成的第2導體部520S的狀況中,高頻訊號的傳輸時,於訊號導體500S中高頻訊號的電流密度變高的部分(接地導體500G側的部分)以第2導體部520S構成。第2導體部520S的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在訊號導體500S側可減輕高頻訊號的傳輸損失。
又,接地導體500G具有以多晶體構成的第2導體部520G的狀況中,高頻訊號的傳輸時,於接地導體500G中高頻訊號的電流密度變高的部分(訊號導體500S側的部分)以第2導體部520G構成。第2導體部520G的交流電阻值在所傳輸之高頻訊號的頻率為一或複數特定頻率帶域時會急遽降低,故在接地導體500G側可減輕高頻訊號的傳輸損失。The connector D5 described above exerts the following technical features and effects.
(A) When the frequency of the high-frequency signal transmitted by the
(B)訊號導體500S具有第1導體部510S及第2導體部520S時,可提升連接器D5與對方連接器的連接信賴性。其理由如下所述。第1導體部510S係以具有比前述多晶體的直流電阻值還小之直流電阻值的素材及具有抗氧化性等之耐腐蝕性的素材的至少一方的素材所構成。可使第1導體部510S的第1連接部接觸且電性連接對方連接器的端子,且可使第1導體部510S的第2連接部電性且機械連接基板或纜線。
接地導體500G具有第1導體部510G及第2導體部520G時,可提升連接器D5對於接地的連接信賴性。其理由如下所述。
第1導體部510G係以具有比前述多晶體的直流電阻值還小之直流電阻值的素材及具有抗氧化性等之耐腐蝕性的素材的至少一方的素材所構成。可使第1導體部510G接地。(B) When the
再者,前述之高頻傳輸裝置並不限定於前述實施例者,於申請專利範圍的記載範圍中,可任意變更設計。以下,詳細說明。Furthermore, the aforementioned high-frequency transmission device is not limited to the aforementioned embodiments, and the design can be changed arbitrarily within the scope of the description of the patent application. The following is a detailed description.
可設為於前述任一樣態的傳輸用基板D1中,於介電體100的第1面101上設置傳輸用基板D3的前述任一樣態的一對接地導體G”,且在接地導體G”之間配置訊號導體S的構造。此時,訊號導體S係除了第1導體部S1及第2導體部S2之外,又具有第2導體部S2”及/或第3導體部S3”亦可A pair of ground conductors G" of any of the aforementioned states of the transmission substrate D3 can be provided on the
可設為於前述任一樣態的傳輸用基板D2中,於介電體100’的內部設置傳輸用基板D3的前述任一樣態的一對接地導體G”,且在接地導體G”之間配置訊號導體S’的構造。此時,訊號導體S’係除了第1導體部S1’、第2導體部S2’及第3導體部S3’之外,又具有第2導體部S2”及/或第3導體部S3”亦可A pair of ground conductors G" in any of the aforementioned states of the transmission substrate D3 can be set in any of the aforementioned transmission substrates D2 in the dielectric body 100', and are arranged between the ground conductors G" The structure of the signal conductor S'. At this time, the signal conductor S'has a second conductor portion S2" and/or a third conductor portion S3" in addition to the first conductor portion S1', the second conductor portion S2', and the third conductor portion S3' can
前述任一樣態的傳輸用基板D1~D2中,前述任一樣態的訊號導體設置複數個於介電體亦可。該訊號導體係包含相互隔開間隔配置於其短邊方向的第1訊號導體及第2訊號導體亦可。例如,傳輸用基板D1係可如圖7所示之傳輸用基板D1’般變更設計。傳輸用基板D1’係具備介電體100”及傳輸路徑。介電體100”具有第1面101”及其相反側的第2面102”。傳輸路徑係具備可傳輸高頻訊號的第1訊號導體S””、第2訊號導體S””及接地導體G”’第1訊號導體S””及第2訊號導體S””係設置於介電體100”的第1面101”上,且相對於接地導體G”’位於Z方向側。第1訊號導體S””及第2訊號導體S””係分別具有第1導體部S1””、第2導體部S2””及第4導體部S4””。第1訊號導體S””及第2訊號導體S””的第2導體部S2””係設置於介電體100”的第1面101”上,且相對於第1導體部S1””,配置於接地導體G”’側。第1訊號導體S””及第2訊號導體S””的第1導體部S1””係固定於第2導體部S2””上。第1訊號導體S””的第4導體部S4””係相對於該第1訊號導體S””的第1導體部S1””,配置於第2訊號導體S””側,第2訊號導體S””的第4導體部S4””係相對於該第2訊號導體S””的第1導體部S1””,配置於第1訊號導體S””側。接地導體G”’係設置於介電體100”的內部亦可,設置於介電體100”的第2面102上亦可。接地導體G”’具有第1導體部G1”’及第2導體部G2”’。第2導體部G2”’係相對於第1導體部G1”’,配置於第1訊號導體S””及第2訊號導體S””側。第1導體部G1”’係固定於第2導體部G2”’上。In any of the aforementioned transmission substrates D1 to D2, any of the aforementioned signal conductors may be provided in a plurality of dielectrics. The signal conductor system may include a first signal conductor and a second signal conductor that are arranged in the short-side direction with an interval from each other. For example, the transmission substrate D1 can be changed in design like the transmission substrate D1' shown in FIG. The transmission substrate D1' includes a dielectric 100" and a transmission path. The dielectric 100" has a
前述任一樣態的傳輸用基板中,介電體上的訊號導體及/或介電體上的接地導體,係設置於介電體內亦可(借助參照圖7)。訊號導體及接地導體設置於介電體內時,傳輸路徑全部位於介電體內。In any of the aforementioned transmission substrates, the signal conductor on the dielectric body and/or the ground conductor on the dielectric body may be provided in the dielectric body (refer to FIG. 7). When the signal conductor and the ground conductor are arranged in the dielectric body, all the transmission paths are located in the dielectric body.
本發明的傳輸用基板,可設為具備具有複數層的多層基板即介電體,與可傳輸高頻訊號的傳輸路徑;傳輸路徑具有複數接地導體,與訊號導體;複數接地導體係設置於介電體的複數層的實心導體,分別具有開口;訊號導體係以位於複數接地導體的開口內之方式,設置於介電體內的導通孔的構造。可作為該訊號導體具有第1導體部及第2導體部時,第1導體部為筒狀,第2導體部係設置於第1導體部之至少一部分的外周面上的筒狀,且相對於第1導體部,配置於複數接地導體側的構造。可作為各接地導體具有第1導體部及第2導體部時,第1導體部係對應之接地導體的開口的緣部以外的部分,第2導體部係開口之環狀的緣部,相對於第1導體部,配置於訊號導體側的構造。The transmission substrate of the present invention can be provided with a multilayer substrate with multiple layers, that is, a dielectric body, and a transmission path capable of transmitting high-frequency signals; the transmission path has a plurality of ground conductors and signal conductors; and the plural ground conductor systems are arranged in the medium. The solid conductors of the plural layers of the electric body have openings; the signal conductor system is arranged in the openings of the plurality of ground conductors, and the structure of the through holes in the dielectric body. When the signal conductor has a first conductor part and a second conductor part, the first conductor part is cylindrical, and the second conductor part is a cylindrical part provided on at least a part of the outer peripheral surface of the first conductor part, and is opposite to The first conductor is a structure in which the plural ground conductors are arranged. When each ground conductor has a first conductor part and a second conductor part, the first conductor part is the part other than the edge of the opening of the corresponding ground conductor, and the second conductor part is the ring-shaped edge of the opening, opposite to The structure where the first conductor part is arranged on the signal conductor side.
於前述任一樣態的連接器D5中,可設為更具備板狀的接地導體的構造。此時,連接器可設為對應傳輸用基板D1~D3的構造。以下,將對應傳輸用基板D1、D2、D3的連接器,稱為第1、第2、第3變更設計連接器。In the connector D5 of any of the aforementioned aspects, it can be a structure further provided with a plate-shaped ground conductor. In this case, the connector can be configured to correspond to the transmission substrates D1 to D3. Hereinafter, the connectors corresponding to the transmission boards D1, D2, and D3 are referred to as the first, second, and third modified design connectors.
於第1變更設計連接器中,如圖8A所示,傳輸路徑500’之板狀的接地導體500G’設置於介電體400內,相對於訊號導體500S’,配置於Z’方向側,且沿著訊號導體500S’的至少一部分延伸。接地導體500G’及訊號導體500S’構成微帶線。訊號導體500S’具有第1導體部510S及第2導體部520S時,第2導體部520S設置於第1導體部510S的Z’方向側(板狀的接地導體側)為佳。接地導體500G’可設為具有第1導體部510G’及第2導體部520G’的構造。第2導體部520G’係設置於第1導體部510G’之的Z’方向側(訊號導體500S’)為佳。In the first modified design connector, as shown in FIG. 8A, the plate-shaped
於第1變更設計連接器中,於介電體400內更設置第1、第2接地導體,且第1、第2接地導體配置於前述任一樣態的訊號導體500S’的X方向側、X’方向側亦可。該第1、第2接地導體也沿著訊號導體500S’的至少一部分延伸。訊號導體500S’係除了第1導體部510S及第2導體部520S之外,與傳輸用基板D3相同,又具有第2導體部S2”及/或第3導體部S3”亦可第2導體部S2”係設置於第1導體部510S的X方向側(第1接地導體側),第3導體部S3”係設置於第1導體部510S的X’方向側(第2接地導體側)為佳。第1、第2接地導體中的至少一方之導體係與傳輸用基板D3相同,可設為具有第1導體部G1”及第2導體部G2”的構造。In the first modified design connector, the first and second grounding conductors are further provided in the dielectric 400, and the first and second grounding conductors are arranged on the X direction side of the
於第2變更設計連接器中,如圖8B所示,傳輸路徑500”之板狀的接地導體500G’為一對,該一對接地導體500G’設置於介電體400內。一對接地導體500G’包含第1、第2接地導體500G’。第1接地導體500G’係相對於訊號導體500S”,配置於Z’方向側,且沿著訊號導體500S”的至少一部分延伸,第2接地導體500G’係相對於訊號導體500S”,配置於Z方向側,且沿著訊號導體500S”的至少一部分延伸。一對接地導體500G’與訊號導體500S”構成帶狀線。訊號導體500S”可設為具有第1導體部510S、第2導體部520S及第3導體部530S的構造。第2導體部520S設置於第1導體部510S的Z’方向側(第1接地導體500G’側),第3導體部530S設置於第1導體部510S的Z方向側(第2接地導體500G’側)為佳。第1接地導體500G’及/或第2接地導體500G’可設為具有第1導體部510G’及第2導體部520G’的構造。第1接地導體500G’的第2導體部520G’係設置於第1接地導體500G’的第1導體部510G’之的Z方向側(訊號導體500S”)為佳。第2接地導體500G’的第2導體部520G’係設置於第2接地導體500G’的第1導體部510G’之的Z’方向側(訊號導體500S”)為佳。In the second modified design connector, as shown in FIG. 8B, the plate-shaped
於第2變更設計連接器中,於介電體400’內更設置第3、第4接地導體,且第3、第4接地導體配置於前述任一樣態的訊號導體500S”的X方向側、X’方向側亦可。該第3、第4接地導體也沿著訊號導體500S”的至少一部分延伸。訊號導體500S”係除了第1導體部510S、第2導體部520S及第3導體部530S之外,與傳輸用基板D3相同,又具有第2導體部S2”及/或第3導體部S3”亦可第2導體部S2”係設置於第1導體部510S的X方向側(第3接地導體側),第3導體部S3”係設置於第1導體部510S的X’方向側(第4接地導體側)為佳。第3接地導體及第4接地導體中的至少一方之導體係與傳輸用基板D3相同,可設為具有第1導體部G1”及第2導體部G2”的構造。In the second modified design connector, the third and fourth ground conductors are further arranged in the dielectric body 400', and the third and fourth ground conductors are arranged on the X direction side of the
於第3變更設計連接器中,如圖8C所示,傳輸路徑500”’之板狀的接地導體500G”為一對,該一對接地導體500G”設置於介電體400的內部。一對接地導體500G”係包含第1接地導體500G”及第2接地導體500G”。第1接地導體500G”係相對於訊號導體500S”’,配置於X方向側,且沿著訊號導體500S”’的至少一部分延伸,第2接地導體500G”係相對於訊號導體500S”’,配置於X’方向側,且沿著訊號導體500S”’的至少一部分延伸。一對接地導體500G”與訊號導體500S”’構成共平面線。訊號導體500S”’可設為具有第1導體部510S、第2導體部520S及第3導體部530S的構造。第2導體部520S設置於第1導體部510S的X方向側(第1接地導體500G”側),第3導體部530S設置於第1導體部510S的X’方向側(第2接地導體500G”側)為佳。第1接地導體500G”及/或第2接地導體500G”可設為具有第1導體部510G”及第2導體部520G”的構造。第1接地導體500G”的第2導體部520G”係設置於第1接地導體500G”的第1導體部510G”之的X’方向側(訊號導體500S”’)為佳。第2接地導體500G”的第2導體部520G”係設置於第2接地導體500G”的第1導體部510G”之的X方向側(訊號導體500S”’)為佳。In the third modified design connector, as shown in FIG. 8C, the plate-shaped
前述任一樣態的連接器中,前述任一樣態的訊號導體設為複數個亦可。此時,複數訊號導體係被介電體保持,收容於接地導體500G內。該複數訊號導體係包含於X-X’方向隔開間隔配置的第1訊號導體及第2訊號導體亦可。接地導體500G係沿著所收容之複數訊號導體的至少一部分延伸。再者,也可將至少一個接地導體500G’設置於介電體來代替該接地導體500G。In any of the aforementioned connectors, the signal conductors of any of the aforementioned states may be plural. At this time, the plural signal conductor system is held by the dielectric body and contained in the
本發明的連接器係與傳輸用基板D4相同,可設為具備介電體400及成為傳輸路徑500””的差動對之第1、第2訊號導體500S””的構造(參照圖8D)。第1、第2訊號導體500S””係至少一部分設置於介電體400內,且隔開間隔配置於X-X’方向。第1、第2訊號導體500S””的至少一方的導體可設為具有第1導體部510S及第4導體部540S的構造。第1訊號導體500S可設為第4導體部540S設置於第1導體部510S的第2訊號導體500S””側的構造。第2訊號導體500S””可設為第4導體部540S設置於第1導體部510S的第1訊號導體500S””側的構造。
該第4變更設計連接器,係如圖8E所示,可設為傳輸路徑500””’更具備配置於第1、第2訊號導體500S””的Z’方向側的前述接地導體500G’,第1、第2訊號導體500S””個別更具備前述第2導體部520S的構造。The connector of the present invention is the same as the transmission substrate D4, and can be configured to include a dielectric 400 and a differential pair of the first and
前述任一樣態的第1訊號導體及第2訊號導體構成差動對亦可,但並不限定於此。前述任一的變更設計例的訊號導體的第1導體部,係更具有前述第1連接部及/或前述第2連接部亦可。The first signal conductor and the second signal conductor in any of the foregoing states may form a differential pair, but it is not limited to this. The first conductor portion of the signal conductor of any of the foregoing modified design examples may further include the first connection portion and/or the second connection portion.
本發明之一樣態的連接構造係如圖9所示,可設為具備具有前述(a)或前述(c)的構造之訊號導體500S的連接器(圖示左側的連接器(以下,稱為第1連接器)),與具有前述(b)或前述(d)的構造之訊號導體500S的連接器(圖示右側的連接器(以下,稱為第2連接器))的構造。此時,在第1連接器的訊號導體500S之前端部511S的一對臂部之間,***第2連接器的訊號導體500S的前端部511S。藉此,在第1連接器的訊號導體500S之前端部511S的一對臂部以分離開之方式彈性變形。藉此,第1連接器的訊號導體500S之前端部511S的一對臂部的內面(第1連接部),彈性接觸於第2連接器的訊號導體500S之前端部511S的外周面(第1連接部)。
第1連接器的訊號導體500S之前端部511S的一對臂部,係其內面未被第2導體部520S覆蓋。第2連接器的訊號導體500S之前端部511S也是其外周面未被第2導體部520S覆蓋。因此,即使第1連接器的訊號導體500S之前端部511S的一對臂部的內面,彈性接觸於第2連接器的訊號導體500S之前端部511S的外周面,第2導體部520S也不會磨耗或破損。
進而,第1連接器的訊號導體500S之前端部511S的一對臂部係其外面也未被第2導體部520S覆蓋時,即使該臂部彈性變形,第2導體部520S也不會破損。The connection structure in the same state of the present invention is shown in FIG. 9, and it can be set as a connector with a
本發明之其他樣態的連接構造係可設為具備具有前述(b)或前述(d)的構造之訊號導體500S的連接器(以下,稱為第3連接器),與具有前述(b)或前述(d)的構造之訊號導體500S的連接器(以下,稱為第4連接器)的構造。此時,第3連接器的訊號導體500S的前端部511S滑動接觸或彈性接觸於第4連接器的訊號導體500S的前端部511S。第3、第4連接器的訊號導體500S之前端部511S的至少接觸面(第1連接部)未被第2導體部520S覆蓋。因此,即使第3連接器的訊號導體500S的前端部511S,滑動接觸或彈性接觸於第4連接器的訊號導體500S的前端部511S,第3、第4連接器的訊號導體500S的第2導體部520S也不會磨耗或破損。Another aspect of the connection structure of the present invention may be a connector having a
於本發明中,前述任一樣態的訊號導體及接地導體的至少一方的導體,係設置於第2導體部與介電體之間,且更具備不包含前述多晶體的第5導體部亦可。於本發明中,前述任一樣態的訊號導體及接地導體的至少一方的導體,係更具備設置於第1、第2導體部之間的第6導體部亦可。In the present invention, the conductor of at least one of the signal conductor and the ground conductor in any of the foregoing states is provided between the second conductor portion and the dielectric body, and may further include a fifth conductor portion that does not include the aforementioned polycrystal . In the present invention, the conductor of at least one of the signal conductor and the ground conductor in any of the aforementioned states may further include a sixth conductor portion provided between the first and second conductor portions.
本發明的導體微粒子係設為平均粒子徑為數nm~數十nm的導體奈米粒子,但只要是例如平均粒子徑為數μm以下的導體微粒子即可。本發明的導體奈米粒子的平均粒子徑作為亞nm~100nm亦可。The conductive fine particles of the present invention are conductive nano particles having an average particle diameter of several nm to several tens of nm, but they may be, for example, conductive fine particles having an average particle diameter of several μm or less. The average particle diameter of the conductor nanoparticle of the present invention may be sub-nm to 100 nm.
本發明的電阻降低材料,係以微粒子構成,且具有傳輸於傳輸路徑之高頻訊號的頻率在一或複數特定頻率帶域時,交流電阻值會急遽降低的物理性質即可。換句話說,電阻降低材料係可設為具有流動於該電阻降低材料的高頻訊號(高頻訊號)的頻率在前述一或複數特定頻率帶域以外的頻率帶域時(前者的狀況),藉由其高頻訊號產生磁場,而藉由該磁場於電阻降低材料的中心部中於妨礙高頻訊號的流向的方向產生感應電動勢(反電動勢),另一方面,流動於該電阻降低材料的高頻訊號的頻率在前述一或複數特定頻率帶域(電阻降低材料產生磁性共振的頻率帶域)時(後者的狀況),藉由其高頻訊號產生磁場,藉由該磁場所產生於電阻降低材料的中心部中的感應電動勢(反電動勢)的方向為相反的物理性質的構造。在此,前者的狀況中,電阻降低材料的磁透率的實部也為正。後者的狀況中,電阻降低材料的磁透率的實部為負。高頻訊號的一或複數特定頻率帶域,係藉由利用高頻訊號所產生之磁場的作用,成為電阻降低材料產生磁性共振的頻率帶域即可。The resistance-reducing material of the present invention is composed of fine particles and has the physical property that the AC resistance value drops sharply when the frequency of the high-frequency signal transmitted in the transmission path is one or more specific frequency bands. In other words, the resistance-reducing material can be set to have a high-frequency signal (high-frequency signal) flowing through the resistance-reducing material when the frequency is outside the aforementioned one or more specific frequency bands (the former situation), The high-frequency signal generates a magnetic field, and the magnetic field generates an induced electromotive force (back electromotive force) in the center of the resistance-reducing material in a direction that hinders the flow of the high-frequency signal. On the other hand, the flow of the resistance-reducing material When the frequency of the high-frequency signal is in the aforementioned one or more specific frequency bands (the frequency band where the resistance reducing material generates magnetic resonance) (the latter condition), the high-frequency signal generates a magnetic field, and the magnetic field generates a resistance The direction of reducing the induced electromotive force (back electromotive force) in the center of the material is a structure with opposite physical properties. Here, in the former situation, the real part of the magnetic permeability of the resistance reducing material is also positive. In the latter case, the real part of the magnetic permeability of the resistance reducing material is negative. One or more specific frequency bands of the high-frequency signal can be the frequency band where the resistance-reducing material generates magnetic resonance by using the action of the magnetic field generated by the high-frequency signal.
例如,本發明的電阻降低材料係可利用在環境溫度下,可顯現前述之物理性質的半導體微粒子構成。該半導體微粒子係平均粒子徑為1mm~100nm為佳,但並不限定於此。該半導體微粒子作為本質半導體微粒子亦可。本質半導體微粒子係例如矽微粒子、鍺微粒子、鑽石微粒子、矽鍺微粒子或化合物半導體微粒子等,但並不限定於此。再者,本質導體微粒子作為單晶亦可,作為多晶亦可,作為非晶質亦可。又,半導體微粒子作為將不純物摻雜於前述本質半導體的不純物半導體亦可。For example, the resistance-reducing material of the present invention can be composed of semiconductor particles that can exhibit the aforementioned physical properties at ambient temperature. The average particle diameter of the semiconductor fine particle system is preferably 1 mm to 100 nm, but it is not limited to this. The semiconductor fine particles may be used as essential semiconductor fine particles. The essential semiconductor particles are, for example, silicon particles, germanium particles, diamond particles, silicon germanium particles, or compound semiconductor particles, but are not limited to these. Furthermore, the intrinsic conductive particles may be single crystals, polycrystalline, or amorphous. In addition, the semiconductor fine particles may be an impurity semiconductor in which an impurity is doped in the aforementioned intrinsic semiconductor.
以半導體微粒子構成的電阻降低材料可使用來代替前述任一樣態的多晶體。以半導體微粒子構成的電阻降低材料可利用與前述任一樣態的多晶體相同的方法來作成。此時,將半導體微粒子置換成導體奈米粒子為佳。前述任一導樣態的第2導體部可利用以半導體微粒子構成的電阻降低材料所構成。此時,前述任一樣態的第1導體部係以具有比前述第2導體部的直流電阻值還小之直流電阻值的素材及具有抗氧化性等之耐腐蝕性的素材的至少一方的素材所構成為佳。本發明的任何樣態的電阻降低材料的交流電阻值,並不限定於傳輸於傳輸路徑之高頻訊號的頻率在一或複數特定頻率帶域時,實質上成為0Ω或負電阻者。本發明的第1導體部,係僅設置於第1連接部及/或第2連接部亦可。A resistance reducing material composed of semiconductor fine particles can be used instead of any of the aforementioned polycrystals. The resistance reducing material composed of semiconductor fine particles can be produced by the same method as any of the aforementioned polycrystals. In this case, it is better to replace the semiconductor fine particles with conductive nano particles. The second conductor portion of any of the aforementioned conductive modes may be formed of a resistance reducing material formed of semiconductor fine particles. At this time, the first conductor part in any of the aforementioned states is made of at least one of a material having a DC resistance value smaller than that of the second conductor part and a material having corrosion resistance such as oxidation resistance. The composition is good. The AC resistance value of any type of resistance reducing material of the present invention is not limited to those where the frequency of the high-frequency signal transmitted through the transmission path becomes substantially 0Ω or negative resistance when the frequency of the high-frequency signal transmitted through the transmission path is one or more specific frequency bands. The first conductor part of the present invention may be provided only in the first connection part and/or the second connection part.
再者,構成前述實施例的各樣態及設計變形例之高頻傳輸裝置的各構成要素的素材、形狀、尺寸、數量、數值及配置等係說明該一例者,只要是可實現相同功能的話,可任意變更設計。前述之實施例的各樣態及變更設計例,只要不互相矛盾,可相互組合。本發明之「大略環狀」係包含圓環狀、多角環狀、圓環狀的一部分缺口者、及多角環狀的一部分缺口者的概念。Furthermore, the materials, shapes, sizes, numbers, values, and arrangements of the constituent elements constituting the high-frequency transmission device in the various aspects of the foregoing embodiments and design modifications are illustrative of this example, as long as the same functions can be achieved , The design can be changed arbitrarily. The various aspects and modified design examples of the foregoing embodiments can be combined with each other as long as they do not contradict each other. The "substantially ring shape" of the present invention is a concept that includes a circular ring shape, a polygonal ring shape, a part of a circular ring shape that is notched, and a polygonal ring shape that is partially notched.
D1~D4:高頻傳輸裝置(傳輸用基板)
100,100’:介電體
101,101’:第1面
102,102’:第2面
200,200’,200”,200”’:傳輸路徑
S,S’,S”,S”’:訊號導體
S1,S1’,S1”,S1”’:訊號導體的第1導體部
S2,S2’,S2”:訊號導體的第2導體部
S3’,S3”:訊號導體的第3導體部
S4”’:訊號導體的第4導體部
G:接地導體(第1接地導體)
G’:接地導體(第2接地導體)
G”:接地導體(第1、第2接地導體)
G1,G1’,G1”:接地導體的第1導體部
G2,G2’,G2”:接地導體的第2導體部
300:發送部
D5:高頻傳輸裝置(連接器)
400:介電體
500:傳輸路徑
500S:訊號導體
510S:訊號導體的第1導體部
520S:訊號導體的第2導體部
500G:接地導體
510G:接地導體的第1導體部
520G:接地導體的第2導體部D1~D4: High-frequency transmission device (substrate for transmission)
100,100’: Dielectric
101,101’:
[圖1A]本發明的實施例1之高頻傳輸裝置的概略俯視圖。 [圖1B]前述高頻傳輸裝置之圖1A中的1B-1B部分剖面圖。 [圖2A]本發明的實施例2之高頻傳輸裝置的概略俯視圖。 [圖2B]前述高頻傳輸裝置之圖2A中的2B-2B部分剖面圖。 [圖3A]本發明的實施例3之高頻傳輸裝置的概略俯視圖。 [圖3B]前述高頻傳輸裝置之圖3A中的3B-3B部分剖面圖。 [圖4A]本發明的實施例4之高頻傳輸裝置的概略俯視圖。 [圖4B]前述高頻傳輸裝置之圖4A中的4B-4B部分剖面圖。 [圖5]本發明的實施例5之高頻傳輸裝置的概略剖面圖。 [圖6A]前述高頻傳輸裝置是同軸連接器時之其他實施例的剖面圖。 [圖6B]前述高頻傳輸裝置之圖6A中的6B-6B部分剖面圖。 [圖7]揭示實施例1的高頻傳輸裝置之設計變形例的概略剖面圖。 [圖8A]揭示實施例5的高頻傳輸裝置之第1設計變形例的概略剖面圖。 [圖8B]揭示實施例5的高頻傳輸裝置之第2設計變形例的概略剖面圖。 [圖8C]揭示實施例5的高頻傳輸裝置之第3設計變形例的概略剖面圖。 [圖8D]揭示實施例5的高頻傳輸裝置之第4設計變形例的概略剖面圖。 [圖8E]揭示第4設計變更例的高頻傳輸裝置之設計變形例的概略剖面圖。 [圖9]用以說明連接本發明之兩個高頻傳輸裝置的構造的說明圖。[Fig. 1A] A schematic plan view of the high-frequency transmission device of the first embodiment of the present invention. [Fig. 1B] A partial cross-sectional view of 1B-1B in Fig. 1A of the aforementioned high-frequency transmission device. [FIG. 2A] A schematic plan view of the high-frequency transmission device of Embodiment 2 of the present invention. [Fig. 2B] A partial cross-sectional view of 2B-2B in Fig. 2A of the aforementioned high-frequency transmission device. [FIG. 3A] A schematic plan view of the high-frequency transmission device of Embodiment 3 of the present invention. [Fig. 3B] A partial cross-sectional view of 3B-3B in Fig. 3A of the aforementioned high-frequency transmission device. [Fig. 4A] A schematic plan view of the high-frequency transmission device of the fourth embodiment of the present invention. [Fig. 4B] A partial cross-sectional view of 4B-4B in Fig. 4A of the aforementioned high-frequency transmission device. [Fig. 5] A schematic cross-sectional view of a high-frequency transmission device of Embodiment 5 of the present invention. [Fig. 6A] A cross-sectional view of another embodiment when the aforementioned high-frequency transmission device is a coaxial connector. [Fig. 6B] A partial cross-sectional view of 6B-6B in Fig. 6A of the aforementioned high-frequency transmission device. [FIG. 7] A schematic cross-sectional view showing a design modification of the high-frequency transmission device of the first embodiment. [FIG. 8A] A schematic cross-sectional view showing a first design modification of the high-frequency transmission device of the fifth embodiment. [FIG. 8B] A schematic cross-sectional view showing a second design modification of the high-frequency transmission device of the fifth embodiment. [FIG. 8C] A schematic cross-sectional view showing a third design modification of the high-frequency transmission device of the fifth embodiment. [FIG. 8D] A schematic cross-sectional view showing a fourth design modification of the high-frequency transmission device of the fifth embodiment. [FIG. 8E] A schematic cross-sectional view showing a design modification example of the high-frequency transmission device of the fourth design modification example. [Fig. 9] An explanatory diagram for explaining the structure of connecting two high-frequency transmission devices of the present invention.
100:介電體 100: Dielectric
101:第1面
101:
102:第2面 102: Side 2
200:傳輸路徑 200: Transmission path
S:訊號導體 S: signal conductor
S1:訊號導體的第1導體部 S1: The first conductor part of the signal conductor
S2:訊號導體的第2導體部 S2: The second conductor part of the signal conductor
G:接地導體 G: Grounding conductor
G1:接地導體的第1導體部 G1: The first conductor part of the ground conductor
G2:接地導體的第2導體部 G2: The second conductor part of the ground conductor
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EP (1) | EP3890105B1 (en) |
JP (1) | JP7304366B2 (en) |
KR (1) | KR20210093929A (en) |
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US5160906A (en) * | 1991-06-24 | 1992-11-03 | Motorola, Inc. | Microstripe filter having edge flared structures |
US5534830A (en) * | 1995-01-03 | 1996-07-09 | R F Prime Corporation | Thick film balanced line structure, and microwave baluns, resonators, mixers, splitters, and filters constructed therefrom |
JP3125618B2 (en) * | 1995-03-27 | 2001-01-22 | 株式会社村田製作所 | Superconducting multilayer electrode, high-frequency transmission line using superconducting multilayer electrode, high-frequency resonator, high-frequency filter, high-frequency device, and method for designing superconducting multilayer electrode |
US6774741B2 (en) * | 2002-05-28 | 2004-08-10 | Decorp Americas, Inc. | Non-uniform transmission line and method of fabricating the same |
CN1326286C (en) * | 2002-08-01 | 2007-07-11 | 松下电器产业株式会社 | Transmission line and semiconductor integrated circuit device |
JP4182016B2 (en) * | 2004-03-11 | 2008-11-19 | 日本電気株式会社 | Transmission line type element and manufacturing method thereof |
CA2605348A1 (en) * | 2005-04-22 | 2006-11-02 | The Regents Of The University Of California | Nanotubes as microwave frequency interconnects |
JP2007221713A (en) | 2006-02-20 | 2007-08-30 | Seiji Kagawa | High frequency transmission line |
JP4468464B2 (en) * | 2008-03-28 | 2010-05-26 | 株式会社東芝 | Flexible printed wiring board and electronic device |
JP4993037B2 (en) * | 2009-08-11 | 2012-08-08 | 株式会社村田製作所 | Signal line |
JP2013229851A (en) | 2012-03-30 | 2013-11-07 | Tdk Corp | High frequency transmission line, antenna and electronic circuit board |
JP6080020B2 (en) | 2012-03-31 | 2017-02-15 | 独立行政法人国立高等専門学校機構 | Transmission line, wiring board, and high-frequency device using them |
US8865604B2 (en) * | 2012-09-17 | 2014-10-21 | The Boeing Company | Bulk carbon nanotube and metallic composites and method of fabricating |
JP5700187B2 (en) * | 2013-02-13 | 2015-04-15 | 株式会社村田製作所 | High frequency signal transmission line, electronic device, and method for manufacturing high frequency signal transmission line |
JP6693655B2 (en) * | 2015-03-31 | 2020-05-13 | 独立行政法人国立高等専門学校機構 | Transmission line, wiring board, high-frequency device using these, and transmission line design method |
US10897068B2 (en) * | 2017-09-19 | 2021-01-19 | D-Wave Systems Inc. | Systems and devices for filtering electrical signals |
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EP3890105B1 (en) | 2023-09-27 |
CN113169431A (en) | 2021-07-23 |
WO2020110491A1 (en) | 2020-06-04 |
JPWO2020110491A1 (en) | 2021-10-14 |
CN113169431B (en) | 2022-06-07 |
US20220029264A1 (en) | 2022-01-27 |
EP3890105A1 (en) | 2021-10-06 |
JP7304366B2 (en) | 2023-07-06 |
EP3890105A4 (en) | 2022-01-05 |
KR20210093929A (en) | 2021-07-28 |
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