TW202032631A - 雷射退火方法及雷射退火裝置 - Google Patents

雷射退火方法及雷射退火裝置 Download PDF

Info

Publication number: TW202032631A
Authority: TW; Taiwan
Prior art keywords: laser; laser beam; beam spot; laser light; light
Prior art date: 2018-12-19

Application number

TW108145214A

Other languages

English (en)

Chinese (zh)

Inventor

水村通伸

Original Assignee

日商Ｖ科技股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-12-19

Filing date

2019-12-11

Publication date

2020-09-01

2019-12-11 Application filed by 日商Ｖ科技股份有限公司 filed Critical 日商Ｖ科技股份有限公司

2020-09-01 Publication of TW202032631A publication Critical patent/TW202032631A/zh

Links

238000005224 laser annealing Methods 0.000 title claims abstract description 92
238000000034 method Methods 0.000 title claims abstract description 57
229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 51
239000013078 crystal Substances 0.000 claims abstract description 33
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
229910052710 silicon Inorganic materials 0.000 claims abstract description 21
239000010703 silicon Substances 0.000 claims abstract description 21
230000015572 biosynthetic process Effects 0.000 claims abstract 3
239000000758 substrate Substances 0.000 claims description 58
239000004065 semiconductor Substances 0.000 claims description 18
229910021419 crystalline silicon Inorganic materials 0.000 claims description 12
230000009182 swimming Effects 0.000 claims 2
230000001678 irradiating effect Effects 0.000 abstract description 7
238000002844 melting Methods 0.000 abstract 1
230000008018 melting Effects 0.000 abstract 1
239000010408 film Substances 0.000 description 61
101100014509 Arabidopsis thaliana GDU3 gene Proteins 0.000 description 30
229910021421 monocrystalline silicon Inorganic materials 0.000 description 11
238000010586 diagram Methods 0.000 description 7
239000010409 thin film Substances 0.000 description 6
239000011521 glass Substances 0.000 description 5
230000012447 hatching Effects 0.000 description 5
210000004027 cell Anatomy 0.000 description 3
238000005516 engineering process Methods 0.000 description 3
238000003384 imaging method Methods 0.000 description 3
239000000155 melt Substances 0.000 description 3
230000003287 optical effect Effects 0.000 description 3
238000011144 upstream manufacturing Methods 0.000 description 3
238000000137 annealing Methods 0.000 description 2
238000002425 crystallisation Methods 0.000 description 2
230000008025 crystallization Effects 0.000 description 2
239000007789 gas Substances 0.000 description 2
229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
230000010355 oscillation Effects 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
239000007787 solid Substances 0.000 description 2
239000006096 absorbing agent Substances 0.000 description 1
239000003086 colorant Substances 0.000 description 1
210000002858 crystal cell Anatomy 0.000 description 1
238000006356 dehydrogenation reaction Methods 0.000 description 1
238000001514 detection method Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
230000001788 irregular Effects 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000013589 supplement Substances 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
High Energy & Nuclear Physics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Optics & Photonics (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Electromagnetism (AREA)
Recrystallisation Techniques (AREA)

TW108145214A 2018-12-19 2019-12-11 雷射退火方法及雷射退火裝置 TW202032631A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2018237457A JP2020098895A (ja)	2018-12-19	2018-12-19	レーザアニール方法およびレーザアニール装置
JP2018-237457		2018-12-19

Publications (1)

Publication Number	Publication Date
TW202032631A true TW202032631A (zh)	2020-09-01

Family

ID=71101556

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW108145214A TW202032631A (zh)	2018-12-19	2019-12-11	雷射退火方法及雷射退火裝置

Country Status (3)

Country	Link
JP (1)	JP2020098895A (ja)
TW (1)	TW202032631A (ja)
WO (1)	WO2020129601A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN112435920B (zh) *	2020-11-05	2024-02-23	北京华卓精科科技股份有限公司	一种长波长激光退火方法及装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2002057105A (ja) *	2000-08-14	2002-02-22	Nec Corp	半導体薄膜製造方法、半導体薄膜製造装置、およびマトリクス回路駆動装置
JP2003100628A (ja) *	2001-09-19	2003-04-04	Sharp Corp	半導体膜の形成方法及びその形成方法を用いて製造された半導体装置並びにディスプレイ装置
JP5073260B2 (ja) *	2006-09-29	2012-11-14	日立コンピュータ機器株式会社	レーザアニール装置及びレーザアニール方法
JP6544090B2 (ja) *	2015-07-06	2019-07-17	国立大学法人島根大学	結晶化方法、パターニング方法、および、薄膜トランジスタ作製方法

2018
- 2018-12-19 JP JP2018237457A patent/JP2020098895A/ja active Pending
2019
- 2019-12-03 WO PCT/JP2019/047137 patent/WO2020129601A1/ja active Application Filing
- 2019-12-11 TW TW108145214A patent/TW202032631A/zh unknown

Also Published As

Publication number	Publication date
WO2020129601A1 (ja)	2020-06-25
JP2020098895A (ja)	2020-06-25

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