TW202029855A - Pattern forming apparatus, pattern forming method and ejection data generation method - Google Patents
Pattern forming apparatus, pattern forming method and ejection data generation method Download PDFInfo
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- TW202029855A TW202029855A TW108139893A TW108139893A TW202029855A TW 202029855 A TW202029855 A TW 202029855A TW 108139893 A TW108139893 A TW 108139893A TW 108139893 A TW108139893 A TW 108139893A TW 202029855 A TW202029855 A TW 202029855A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/2018—Masking pattern obtained by selective application of an ink or a toner, e.g. ink jet printing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67138—Apparatus for wiring semiconductor or solid state device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
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- Manufacturing Of Printed Wiring (AREA)
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Abstract
Description
本發明係關於一種在配線基板上形成阻劑膜(resist film)之圖案(pattern)的技術。The present invention relates to a technique for forming a pattern of a resist film on a wiring substrate.
習知以來在配線基板上形成有阻劑膜的目的係在於保護配線基板上的導體圖案。阻劑膜亦具有在進行後製程(post‐process)之焊錫塗布時用以防止焊錫附著於導體配線等之區域的任務,亦被稱為「阻焊劑(solder resist)」。作為形成阻劑膜的一手法係已知有一種以噴墨(ink jet)方式將阻焊劑之墨料(ink)的液滴向配線基板噴出的方法。如此的技術例如已揭示於日本特開平9-283893號公報及特開2008-4820號公報。Conventionally, the purpose of forming a resist film on a wiring board is to protect the conductor pattern on the wiring board. The resist film also has the task of preventing the solder from adhering to areas such as conductor wiring during post-process solder coating, and is also called "solder resist". As a method of forming a resist film, there is known a method of ejecting droplets of solder resist ink to the wiring substrate by an ink jet method. Such a technique has been disclosed in Japanese Patent Application Publication No. 9-283893 and Japanese Patent Application Publication No. 2008-4820, for example.
可是,在配線基板上,導體配線以及焊盤(land)等的導體圖案係從玻璃環氧樹脂(glass epoxy resin)等的基材之表面些微地突出。因此,當對配線基板賦予每一單位面積固定量的墨料時,會有阻劑膜不成為按理想的厚度之情形。例如在基材之表面與導體圖案之表面之間的段差中,會有墨料從導體圖案上向基材之表面流動而無法在導體圖案之邊緣(edge)上形成足夠厚度的阻劑膜之虞。However, on the wiring board, conductor patterns such as conductor wiring and lands slightly protrude from the surface of a base material such as glass epoxy resin. Therefore, when a fixed amount of ink per unit area is applied to the wiring board, the resist film may not have the desired thickness. For example, in the step difference between the surface of the substrate and the surface of the conductive pattern, ink may flow from the conductive pattern to the surface of the substrate, and it is impossible to form a resist film of sufficient thickness on the edge of the conductive pattern. Yu.
更且,在已對配線基板賦予每一單位面積固定量的墨料的情況下,也有導體圖案之厚度在該狀態下會影響到阻劑膜之表面的凹凸且阻劑膜之表面的凹凸超過容許範圍之虞。在此情況下,例如有在後製程中使用金屬遮罩(metal mask)塗布焊錫膏(solder paste)時無法正確地塗布焊錫之虞。Moreover, when a fixed amount of ink per unit area has been applied to the wiring board, the thickness of the conductor pattern in this state may affect the unevenness of the resist film surface and the unevenness of the resist film surface exceeds The allowable range. In this case, for example, the solder paste may not be applied correctly when a metal mask is used in the subsequent process to apply solder paste.
本發明係關於一種圖案形成裝置,係以阻焊劑之墨料在配線基板上形成阻劑膜之圖案。The present invention relates to a pattern forming device which uses solder resist ink to form a resist film pattern on a wiring substrate.
本發明之目的係能夠在配線基板上形成具有適當之厚度的阻劑膜之圖案。The object of the present invention is to be able to form a pattern of a resist film having an appropriate thickness on a wiring board.
本發明之一較佳的圖案形成裝置係具備:保持部,係保持配線基板;頭部,係以噴墨方式將阻焊劑之墨料的液滴向前述配線基板噴出;移動機構,係將前述頭部相對於前述保持部向與前述配線基板平行的方向相對地移動;以及控制部,係控制前述頭部及前述移動機構,藉此將前述配線基板上的導電圖案之邊緣附近區域中的每一單位面積之墨料的噴出量設為比未形成有導電圖案之區域中的每一單位面積之墨料的噴出量更多並且在前述配線基板上形成阻劑膜之圖案。A preferred pattern forming apparatus of the present invention is provided with: a holding portion for holding a wiring board; a head portion for ejecting droplets of solder resist ink onto the wiring board by an inkjet method; and a moving mechanism for holding the wiring board The head portion relatively moves in a direction parallel to the wiring board with respect to the holding portion; and the control portion controls the head and the moving mechanism, whereby each area near the edge of the conductive pattern on the wiring board The ejection amount of ink per unit area is set to be greater than the ejection amount of ink per unit area in the area where the conductive pattern is not formed, and a pattern of resist film is formed on the aforementioned wiring substrate.
較佳為藉由前述控制部之控制,將前述配線基板上的導電圖案之區域當中遠離邊緣之圖案中央區域中的每一單位面積之墨料的噴出量設為比未形成有導電圖案之區域中的每一單位面積之墨料的噴出量更少並且在前述配線基板上形成有阻劑膜之圖案。Preferably, the amount of ink ejected per unit area in the central area of the pattern far from the edge in the area of the conductive pattern on the wiring board is set to be higher than that of the area where the conductive pattern is not formed. The ejection amount of ink per unit area is smaller and a resist film pattern is formed on the aforementioned wiring substrate.
更佳為,藉由前述控制部之控制,將前述邊緣附近區域與前述圖案中央區域之間的每一單位面積之墨料的噴出量設為前述邊緣附近區域中的每一單位面積之墨料的噴出量與前述圖案中央區域中的每一單位面積之墨料的噴出量之間的噴出量並且在前述配線基板上形成阻劑膜之圖案。More preferably, the ejection amount of ink per unit area between the area near the edge and the central area of the pattern is set to the amount of ink per unit area in the area near the edge under the control of the control unit. The ejection amount between the ejection amount of the ink and the ejection amount of the ink per unit area in the central area of the pattern and the pattern of the resist film is formed on the wiring substrate.
本發明之另一較佳形態的圖案形成裝置係以阻焊劑之墨料在配線基板上形成阻劑膜之圖案,前述圖案形成裝置具備:保持部,係保持配線基板;頭部,係以噴墨方式將阻焊劑之墨料的液滴向前述配線基板噴出;移動機構,係將前述頭部相對於前述保持部向與前述配線基板平行的方向相對地移動;以及控制部,係控制前述頭部及前述移動機構,藉此將前述配線基板上的導電圖案之區域當中遠離邊緣之圖案中央區域中的每一單位面積之墨料的噴出量設為比未形成有導電圖案之區域中的每一單位面積之墨料的噴出量更少並且在前述配線基板上形成阻劑膜之圖案。Another preferred form of the pattern forming device of the present invention is to use solder resist ink to form a pattern of resist film on the wiring substrate. The pattern forming device includes: a holding portion for holding the wiring substrate; a head portion for spraying The ink method ejects droplets of solder resist ink to the wiring board; a moving mechanism that relatively moves the head relative to the holding portion in a direction parallel to the wiring board; and a control portion that controls the head Section and the moving mechanism, whereby the ejection amount of ink per unit area in the central area of the pattern far from the edge in the area of the conductive pattern on the wiring board is set to be higher than that per unit area in the area where the conductive pattern is not formed. The ejection amount of ink per unit area is smaller and a resist film pattern is formed on the aforementioned wiring substrate.
無論是在上述哪個較佳的形態中,較佳為前述控制部係包含:記憶部,係保存導電圖案資料及阻劑圖案資料(resist pattern data),前述導電圖案資料係表示前述導電圖案,前述阻劑圖案資料係表示前述阻劑膜之圖案;以及噴出資料生成部,係基於前述導電圖案資料及前述阻劑圖案資料而生成噴出資料,前述噴出資料係表示從前述頭部向前述配線基板上之各個位置噴出的墨料之量。In either of the above-mentioned preferred forms, it is preferable that the aforementioned control unit includes: a memory unit for storing conductive pattern data and resist pattern data, the aforementioned conductive pattern data represents the aforementioned conductive pattern, and the aforementioned The resist pattern data represents the pattern of the aforementioned resist film; and the ejection data generating unit generates ejection data based on the aforementioned conductive pattern data and the aforementioned resist pattern data, and the aforementioned ejection data represents the direction from the head to the wiring board The amount of ink ejected from each position.
本發明亦關於一種圖案形成方法,係以阻焊劑之墨料在配線基板上形成阻劑膜之圖案。本發明之一較佳形態的圖案形成方法,係具備: a)工序,係以噴墨方式將阻焊劑之墨料的液滴從頭部向配線基板噴出;以及b)工序,係與前述a)工序並行,將前述頭部相對於前述配線基板向與前述配線基板平行的方向相對地移動;藉由前述a)工序及前述b)工序,將前述配線基板上的導電圖案之邊緣附近區域中的每一單位面積之墨料的噴出量設成比未形成有導電圖案之區域中的每一單位面積之墨料的噴出量更多並且在前述配線基板上形成阻劑膜之圖案。The present invention also relates to a pattern forming method, which uses solder resist ink to form a resist film pattern on a wiring substrate. A preferred aspect of the pattern forming method of the present invention includes: a) a step of ejecting droplets of solder resist ink from the head to the wiring board by an inkjet method; and b) the step, which is the same as the aforementioned a) The process is parallel, the head is relatively moved relative to the wiring substrate in a direction parallel to the wiring substrate; through the a) process and the b) process, the area near the edge of the conductive pattern on the wiring substrate The ejection amount of ink per unit area is set to be greater than the ejection amount of ink per unit area in the area where the conductive pattern is not formed, and a resist film pattern is formed on the aforementioned wiring substrate.
本發明之另一較佳形態的圖案形成方法,係具備:a)工序,係以噴墨方式將阻焊劑之墨料的液滴從頭部向配線基板噴出;以及b)工序,係與前述a)工序並行,將前述頭部相對於前述配線基板向與前述配線基板平行的方向相對地移動;藉由前述a)工序及b)工序,將前述配線基板上的導電圖案之區域當中遠離邊緣之圖案中央區域中的每一單位面積之墨料的噴出量設為比未形成有導電圖案之區域中的每一單位面積之墨料的噴出量更少並且在前述配線基板上形成有阻劑膜之圖案。The pattern forming method of another preferred aspect of the present invention includes: a) step of ejecting droplets of solder resist ink from the head to the wiring board by an inkjet method; and b) step, which is the same as the aforementioned a ) The process is parallel, the head is relatively moved relative to the wiring substrate in a direction parallel to the wiring substrate; through the a) process and b) process, the conductive pattern on the wiring substrate is moved away from the edge The ejection amount of ink per unit area in the central area of the pattern is set to be less than the ejection amount of ink per unit area in the area where the conductive pattern is not formed, and a resist film is formed on the aforementioned wiring substrate The pattern.
本發明亦關於一種噴出資料生成方法,係生成噴出資料,前述噴出資料係在以噴墨方式將阻焊劑之墨料的液滴從頭部向配線基板噴出時所使用。本發明之一較佳形態的噴出資料生成方法,係具備:準備導電圖案資料及阻劑圖案資料的工序,前述導電圖案資料係表示配線基板上之導電圖案,前述阻劑圖案資料係表示阻劑膜之圖案;以及基於前述導電圖案資料及前述阻劑圖案資料而生成噴出資料的工序,前述噴出資料係將前述導電圖案之邊緣附近區域中的每一單位面積之墨料的噴出量設為比未形成有導電圖案之區域中的每一單位面積之墨料的噴出量更多。The present invention also relates to a method for generating ejection data. The ejection data is used when spraying droplets of solder resist ink from the head to the wiring board by an inkjet method. A preferred form of the ejection data generation method of the present invention includes the steps of preparing conductive pattern data and resist pattern data. The conductive pattern data represents the conductive pattern on the wiring substrate, and the resist pattern data represents the resist The pattern of the film; and the process of generating ejection data based on the conductive pattern data and the resist pattern data. The ejection data is based on the ejection amount of ink per unit area in the area near the edge of the conductive pattern as the ratio The ejection amount of ink per unit area in the area where the conductive pattern is not formed is more.
本發明之另一較佳形態的噴出資料生成方法,係具備:準備導電圖案資料及阻劑圖案資料的工序,前述導電圖案資料係表示配線基板上之導電圖案,前述阻劑圖案資料係表示阻劑膜之圖案;以及基於前述導電圖案資料及前述阻劑圖案資料而生成噴出資料的工序,前述噴出資料係將前述配線基板上的導電圖案之區域當中遠離邊緣之圖案中央區域中的每一單位面積之墨料的噴出量設為比未形成有導電圖案之區域中的每一單位面積之墨料的噴出量更少。Another preferred form of the ejection data generation method of the present invention includes the steps of preparing conductive pattern data and resist pattern data. The conductive pattern data represents the conductive pattern on the wiring substrate, and the resist pattern data represents the resist The pattern of the agent film; and the process of generating ejection data based on the conductive pattern data and the resist pattern data. The ejection data is the area of the conductive pattern on the wiring substrate for each unit in the central area of the pattern far from the edge The ejection amount of ink per area is set to be smaller than the ejection amount of ink per unit area in the area where the conductive pattern is not formed.
上述之目的及其他之目的、特徵、態樣及優點係參照所附圖式並藉由以下所進行的本發明之詳細說明而明白。The above-mentioned objects and other objects, features, aspects and advantages are understood with reference to the accompanying drawings and the following detailed description of the present invention.
圖1係顯示圖案形成裝置1之外觀的立體圖。圖案形成裝置1係以阻焊劑之墨料在印刷配線基板(以下簡稱為「配線基板」)9上形成阻劑膜之圖案。圖案形成裝置1係以噴墨方式形成圖案。配線基板9雖然較佳是板狀之構件但是亦可為具有可撓性的片(sheet)狀之構件。阻劑膜係保護配線基板9上的導體圖案。在導體圖案係包含有配線、焊盤及其他的圖案。阻劑膜係不形成於:在後製程中供焊錫膏塗布的區域、或非應供阻劑膜設置的其他區域。FIG. 1 is a perspective view showing the appearance of the
圖案形成裝置1係具備本體11及控制部12。本體11係具備:Y方向移動機構2a,係將配線基板9向與配線基板9平行的Y方向移動;頭部3,係向移動途中的配線基板9噴出阻焊劑之墨料(以下簡稱為「墨料」)的微小液滴;X方向移動機構2b,係將頭部3向與Y方向垂直且與配線基板9平行的X方向移動;以及槽(tank)4,係貯存供給至頭部3的墨料。以下,將Y方向移動機構2a及X方向移動機構2b統稱為「移動機構2」。作為Y方向移動機構2a及X方向移動機構2b係可利用複數種機構。例如可採用安裝有馬達的滾珠螺桿(ball screw)機構,亦可採用線性馬達(linear motor)。控制部12係控制移動機構2及頭部3。墨料係從槽4經由管件(tube)41供給至頭部3。The
Y方向移動機構2a係具有保持部21,該保持部21係保持配線基板9。在本實施形態中,保持部21為載置台(stage),以下將保持部21稱為「載置台21」。配線基板9係保持於載置台21上。在本實施形態中,在載置台21之表面係形成有複數個孔,孔係連接於未圖示的吸引裝置。從孔進行空氣之吸引,藉此配線基板9能保持於載置台21上。配線基板9之保持亦可藉由其他的複數種手法所進行。例如亦可在載置台21之表面形成有從孔向水平方向延伸的溝槽而將吸引吸附配線基板9的面積擴展。載置台21亦可由多孔質材料所形成且從多孔質材料進行吸引。載置台21亦可藉由機械式的機構來保持配線基板9。The Y-direction moving mechanism 2a has a
在頭部3係設置有噴出單元,該噴出單元係具有等間隔地排列於X方向的複數個噴出口。從各個噴出口以噴墨方式噴出墨料之液滴。墨料係向配線基板9並向圖1之(-Z)方向噴出。作為噴墨方式係可利用複數種的構造,而可利用的構造係有利用壓電(piezo)的構造或利用加熱器(heater)的構造。The
一邊從複數個噴出口噴出墨料之液滴一邊使載置台21藉由Y方向移動機構2a向與配線基板9平行的Y方向移動,藉此可對向Y方向延伸的區域賦予墨料。以下,亦將配線基板9之Y方向的移動稱為「主掃描」。實際上在配線基板9之一次主掃描中會在配線基板9上形成有與複數個噴出口對應的複數個墨料之線。當一次主掃描完成時,頭部3會藉由X方向移動機構2b向與配線基板9平行的X方向些微地移動,配線基板9會藉由Y方向移動機構2a向(-Y)方向移動。藉此,可進行第二次的主掃描且與以前次的主掃描所形成的墨料之各條線鄰接而形成有墨料之線。While ejecting ink droplets from a plurality of ejection ports, the mounting table 21 is moved in the Y direction parallel to the
反覆進行主掃描預定次數,藉此在與複數個噴出口的X方向之排列寬度大致相等的寬度之區域形成有阻劑膜。由於阻劑膜係僅形成於必要的區域故而能正確地形成阻劑膜之圖案。以下,將與複數個噴出口的X方向之排列寬度大致相等的寬度稱為「單元寬度」,將以該寬度來形成阻劑膜的區域稱為「單元區域」。當在一個單元區域形成有阻劑膜時,頭部3會藉由X方向移動機構2b向X方向移動達至單元寬度,且藉由反覆進行上述的主掃描而在與前次的單元區域鄰接的單元區域形成有阻劑膜。The main scan is repeatedly performed a predetermined number of times, whereby a resist film is formed in an area having a width substantially equal to the arrangement width of the plurality of ejection ports in the X direction. Since the resist film is formed only in the necessary area, the pattern of the resist film can be formed accurately. Hereinafter, the width substantially equal to the arrangement width of the plurality of ejection ports in the X direction is referred to as "cell width", and the area where the resist film is formed with this width is referred to as "cell area". When a resist film is formed in a unit area, the
反覆進行單元區域上的阻劑膜之形成以及頭部3往X方向之移動,藉此在配線基板9之必要的區域整體形成有阻劑膜之圖案。The formation of the resist film on the cell area and the movement of the
圖2係顯示控制部12所具有的電腦5之構成的圖。電腦5係成為包含CPU(Central Processing Unit;中央處理單元)51、ROM(Read Only Memory;唯讀記憶體)52及RAM(Random Access Memory;隨機存取記憶體)53的一般電腦系統之構成,該CPU51係進行各種運算處理,該ROM52係記憶基本程式(basic program),該RAM53係記憶各種資訊。電腦5係更包含:固定磁碟(fixed disk)54,係進行資訊記憶;顯示器(display)55,係進行影像等的各種資訊之顯示;作為輸入部56的鍵盤(keyboard)56a及滑鼠(mouse)56b,係受理來自操作員的輸入;讀取裝置57,係從光碟、磁碟、磁光碟、記憶卡(memory card)等之電腦可讀取的記錄媒體8進行資訊之讀取;以及通信部58,係在與本體11之間收發信號。FIG. 2 is a diagram showing the configuration of the
在電腦5中係事前經由讀取裝置57從記錄媒體8讀取程式80並記憶於固定磁碟54。程式80亦可經由網路(network)記憶於固定磁碟54。CPU51係按照程式80一邊利用RAM53或固定磁碟54一邊執行運算處理。CPU51係在電腦5中具有作為運算部的功能。亦可採用CPU51以外具有作為運算部的功能之其他的構成。The
圖3係顯示藉由電腦5按照程式80執行運算處理所實現之功能構成的圖。在此等的功能構成中係包含有噴出資料生成部61及記憶部62。記憶部62係對應於RAM53以及固定磁碟54等。噴出資料生成部61係包含邊緣提取(edge extraction)部611、修正部612及轉換部613。此等的功能之全部或一部分亦可藉由專用的電子電路所實現。又,亦可藉由複數個電腦來實現此等的功能。FIG. 3 is a diagram showing the functional structure realized by the
圖4係顯示圖案形成裝置1的動作之流程的圖。圖4之步驟S12至S14是藉由控制部12所為的運算處理,步驟S15是藉由控制部12之控制所為的本體11之動作。在記憶部62係經由通信部58以及讀取裝置57等事先保存並準備有導電圖案資料71及阻劑圖案資料72(步驟S11)。導電圖案資料71是表示配線基板9上之導電圖案的資訊。阻劑圖案資料72是表示形成於配線基板9上之預定的阻劑膜之圖案的資訊。再者,導電圖案資料71及阻劑圖案資料72在已保存於記憶部62的階段亦可為向量資料(vector data)。FIG. 4 is a diagram showing the flow of the operation of the
圖5係例示配線基板9上之導電圖案91的圖。在圖5中係於導電圖案91附加平行斜線。導電圖案91在典型上是已形成於基材90上之較薄的銅的圖案。雖然基材90例如藉由玻璃環氧樹脂所形成但是亦可藉由其他的材料所形成。導電圖案91之從基材90之表面起算的高度例如是35μm。作為導電圖案91之高度係有複數種高度。圖6係例示在配線基板9上形成有作為絕緣層的阻劑膜92之樣態的圖。於阻劑膜92附加平行斜線。區域931、932是不存在阻劑膜92的區域。FIG. 5 is a diagram illustrating the
圖3之邊緣提取部611係對導電圖案資料71施予邊緣提取處理,藉此生成表示導電圖案91之邊緣的影像。正確來說是生成作為表示邊緣的影像之資料的邊緣資料(步驟S12)。邊緣資料係輸入至修正部612。在修正部612亦輸入有導電圖案資料71及阻劑圖案資料72。阻劑圖案資料72是表示阻劑膜之圖案的影像之資料,且在各個像素設定有表示墨料之「有賦予」的值「1」或表示「沒有賦予」的值「0」。以下,將表示墨料的賦予之有無的值稱為「賦予值」。The
修正部612係將阻劑圖案資料72之各個像素的賦予值轉換成與阻劑膜之設計上的厚度對應的每一單位面積之墨料量。亦即,在修正部612中係對「有賦予」的像素設定事先所決定的每一單位面積之墨料量。以下,將每一單位面積之墨料量簡稱為「墨料量」。對「沒有賦予」的像素係將墨料量設定成「0」。墨料量亦可為表示與單位建立關聯關係之具體的墨料量的值,又可為與墨料量建立關聯關係之單純的值。The
其次,修正部612係基於邊緣資料而修正各個像素之墨料量以便導電圖案91之邊緣附近區域中的阻劑膜之厚度變厚(步驟S13之一部分)。亦即,修正部612係為了在形成預定的阻劑膜之圖案與導電圖案91之邊緣重疊的位置附近增大所賦予的墨料之量而修正阻劑圖案資料72。Next, the
修正部612係更進一步藉由參照導電圖案資料71及邊緣資料來修正各個像素之墨料量,以便導電圖案91之區域當中遠離邊緣之配線中央區域中的阻劑膜之厚度變薄(步驟S13之一部分)。亦即,修正部612係為了在形成預定的阻劑膜之圖案與比導電圖案91之邊緣更靠內側的區域重疊的區域中減少所賦予的墨料之量而修正阻劑圖案資料72。The
參照圖6至圖10更進一步說明步驟S12與步驟S13之具體例。圖7係顯示在阻劑膜92形成之前的階段中的圖6中之VII-VII之位置上的配線基板9之剖面的圖。圖8係顯示在阻劑膜92形成之前的階段中的VII-VII之位置附近的配線基板9之俯視圖。導電圖案91係形成於基材90上且具有某程度的厚度。修正部612係從導電圖案資料71中取得圖7及圖8附記元件符號94的導電圖案91之邊緣(步驟S12)。Specific examples of step S12 and step S13 are further described with reference to FIGS. 6 to 10. FIG. 7 is a diagram showing a cross-section of the
在此,在阻劑膜92形成之前的階段中,圖6之VII-VII的範圍係成為整體形成有阻劑膜92的預定。亦即,在全範圍中賦予值為「1」。因此,修正部612係遍及於全範圍將墨料量設定成既定值。在本實施形態中係將既定值之墨料表現為「100%」。該值係比頭部3所能夠噴出的墨料量之上限值更低。圖9之下層係與圖7同樣地顯示VII-VII之位置中的配線基板9之剖面,上層則顯示在VII-VII之範圍中墨料量被設定成100%。Here, in the stage before the formation of the resist
其次,修正部612係基於邊緣資料而修正墨料量,亦即修正像素值,以便導電圖案91之邊緣附近區域(在圖7及圖8中為附記元件符號951的區域,在圖8中為附記平行斜線的區域)中的阻劑膜之厚度變厚(步驟S13之一部分)。在圖10之上層係在與邊緣附近區域951對應的位置附記元件符號951,且顯示在邊緣附近區域951的墨料量超過100%並比預定值還多。Secondly, the
更且,修正部612係參照導體圖案資料71及邊緣資料,藉此如圖7及圖8所示地特定導電圖案91之區域當中遠離邊緣94的圖案中央區域952。在圖8中係於圖案中央區域952附記平行斜線。然後,以圖案中央區域952中的阻劑膜之厚度變薄的方式來修正墨料量,亦即修正像素值(步驟S13之一部分)。在圖10之上層係於與圖案中央區域952對應的位置附記元件符號952,且在圖案中央區域952來表示墨料量低於100%且墨料量比既定值還少。Furthermore, the
圖11係顯示假設圖案形成裝置1在圖6之VII-VII的全範圍中以墨料量100%進行了墨料之賦予的情況的阻劑膜92的圖。由於阻焊劑之墨料係在導電圖案91之邊緣94附近從導電圖案91向基材90流失某程度,故而阻劑膜92之厚度會在邊緣附近區域951中變薄。結果,會有在邊緣附近發生絕緣不良之虞。阻劑膜92之厚度例如需要十幾μm。阻劑膜92之必要厚度係相應於配線基板9之種類而各有不同。FIG. 11 is a diagram showing the resist
另一方面,在圖案中央區域952中,阻劑膜92之厚度係成為與墨料量100%對應的厚度。在此,將比邊緣附近區域951更靠外側的區域稱為基材區域953(參照圖7及圖8),當圖案中央區域952與基材區域953的阻劑膜92之高度差大幅不同時,會有在進行後製程的焊錫膏之塗布時發生不良情形之虞。具體而言,在將形成有與塗布焊錫膏之區域對應的開口的金屬板配置於阻劑膜92上並使用刮板(squeegee)來印刷(即塗布)焊錫膏時,會有在金屬板與阻劑膜92之間局部地發生較大的間隙而無法適當的進行塗布之虞。On the other hand, in the
在圖案形成裝置1中,為了解決邊緣附近區域951及圖案中央區域952中的上述問題,可如上述般地以邊緣附近區域951中的墨料量成為比基材區域953之墨料量更多的方式來設定,且以圖案中央區域952中的墨料量成為比基材區域953之墨料量更少的方式來設定。以下,藉由修正部612來轉換成表示每一單位面積的墨料之賦予量的資料,進而將已被修正過的阻劑圖案資料72稱為「修正完畢阻劑圖案資料」。In the
修正完畢阻劑圖案資料係輸入至圖3之轉換部613且轉換成噴出資料75,該噴出資料75係表示頭部3之各個噴出口在各個位置噴出的墨料量(步驟S14)。換言之,噴出資料75係表示從頭部3向配線基板9上之各個位置噴出的墨料之量。噴出資料75係保存於記憶部62。噴出資料75例如被當作表示墨料之液滴的尺寸的資料來生成,該墨料之液滴係被賦予至以10μm間距(pitch)呈格子狀地設定於配線基板9上的各個位置。The corrected resist pattern data is input to the
如以上說明,噴出資料生成部61係基於導電圖案71及阻劑圖案資料72而生成噴出資料75。修正完畢阻劑圖案資料與噴出資料75係僅有資訊之形式不同,實質上都是表示每一單位面積之墨料的噴出量。As described above, the ejection
本體11係從控制部12接收噴出資料75且按照噴出資料75來控制頭部3及移動機構2。具體而言,並行地進行:將墨料之液滴從頭部3向配線基板9噴出的工序;以及將頭部3相對於配線基板9向與配線基板9平行的方向相對地移動的工序。藉此,在配線基板9上賦予墨料且形成阻劑膜92之圖案(步驟S15)。The
圖12係顯示在圖6之VII-VII的位置按照從修正完畢阻劑圖案資料所導出之噴出資料75所形成的阻劑膜92的圖。在圖12中係以二點鏈線顯示圖11之阻劑膜92的形狀。藉由控制部12的控制將邊緣附近區域951中的每一單位面積之墨料的噴出量形成比基材區域953亦即未形成有導電圖案91之區域中的每一單位面積之墨料的噴出量更多並且在配線基板9上形成有阻劑膜92之圖案。藉此,在邊緣附近區域951中可確保阻劑膜92之足夠的厚度。FIG. 12 is a diagram showing the resist
另一方面,圖案中央區域952中的每一單位面積之墨料的噴出量係一邊形成比基材區域953,亦即未形成有導電圖案91之區域中的每一單位面積之墨料的噴出量更少一邊在配線基板9上形成有阻劑膜92之圖案。藉此,可在圖案中央區域952中抑制阻劑膜92成為不必要的厚度,且可緩和阻劑膜92之表面的凹凸。結果,能夠抑制焊錫膏之塗布等後製程中的不良情形之發生。此外,亦能夠削減墨料之消耗量。On the other hand, the ejection amount of ink per unit area in the central area of the
只要邊緣附近區域951之墨料量能超過基材區域953之墨料量即可故亦可進行複數種的設定。將基材區域953之普通的墨料量設為100%,邊緣附近區域951之墨料量設為超過100%且為300%以下。較佳為110%以上200%以下。圖案中央區域952之墨料量係只要低於基材區域953之墨料量即可故亦可進行複數種的設定。將基材區域953之普通的墨料量設為100%,圖案中央區域952之墨料量設為20%以上未滿100%。較佳為30%以上80%以下。邊緣附近區域951及圖案中央區域952之墨料量係可相應於墨料之黏度而進行複數種的變更。墨料之黏度較佳是在50℃之溫度中為10mPa˙s以上30mPa˙s以下。As long as the amount of ink in the
與邊緣附近區域951之邊緣94垂直的方向之寬度係從邊緣94向兩側為0.3mm以下(寬度整體為0.6mm以下)。較佳為從邊緣94向兩側為0.05mm以上0.15mm以下(寬度整體為0.1mm以上0.3mm以下)。但是,由於可賦予墨料之液滴的位置係在配線基板9上離散地存在,且墨料之液滴係在配線基板9上擴展,故而在邊緣附近區域951較細的情況下,亦有僅有形成於配線基板9上的點(dot)之一行是由液量較多之液滴所形成的情況。The width in the direction perpendicular to the
在修正完畢阻劑圖案資料中會在邊緣附近區域951增加墨料量的概念,係意指在噴出資料75中,被噴出的液滴之中心位於邊緣附近區域951內的液滴之液量較多。作為增大液滴之液量的手法係可採用複數種的手法。例如有增大一個液滴之大小、或者增多實質上能夠視為一個液滴的複數個微小液滴之數目等的手法。The concept of increasing the ink volume in the
又,由於可賦予墨料之液滴的位置係僅離散地存在於配線基板9上,所以修正完畢阻劑圖案資料所應用的導電圖案91之寬度較佳為100μm以上,更佳為150μm以上,最佳為200μm以上。配線基板9上的墨料之液滴所可賦予的位置較佳是以20μm間距以下存在,更佳是以10μm間距以下存在。In addition, since the positions of the droplets that can be applied to the ink are only discretely present on the
圖13係圖6之VII-VII的位置上的墨料量之另一例的圖。在圖13中,如元件符號954所示,與圖10相較,在邊緣附近區域951與圖案中央區域952之間設定有比邊緣附近區域951之墨料量更少且比圖案中央區域952之墨料量更多的墨料量。墨料量為中間的區域例如是在修正部612輸入有導電圖案資料71及邊緣資料並設定有邊緣附近區域951與圖案中央區域952時,被設定在邊緣附近區域951與圖案中央區域952之間,或者被設定在圖案中央區域952與邊緣附近區域951相接觸的部分。以下,將邊緣附近區域951與圖案中央區域952之間的墨料量為中間的區域稱為「中間區域954」。中間區域954之墨料量亦可與基材區域953之墨料量相等。Fig. 13 is a diagram showing another example of the amount of ink at positions VII-VII in Fig. 6. In FIG. 13, as shown by the
從圖13所示的修正完畢阻劑圖案資料生成噴出資料並進行墨料之賦予,藉此在圖案形成裝置1中藉由控制部12之控制,將邊緣附近區域951與圖案中央區域952之間的中間區域954中的每一單位面積之墨料的噴出量設為邊緣附近區域951中的每一單位面積之墨料的噴出量與圖案中央區域952中的每一單位面積之墨料的噴出量之間的噴出量並且在配線基板9上形成阻劑膜92之圖案。藉此,可緩和邊緣附近區域951與圖案中央區域952之間的墨料量之差異,且可抑制在導電圖案91上於阻劑膜92產生不自然的凹凸。The ejection data is generated from the corrected resist pattern data shown in FIG. 13 and the ink is applied, whereby the
圖案形成裝置1中係可有複數種的變化。There may be multiple variations in the
邊緣94係沒有必要位於邊緣附近區域951之中央,邊緣附近區域951亦可存在達至從邊緣94向左右不同的寬度。邊緣附近區域951中的墨料量亦可隨著遠離邊緣94而平穩地減少。The
在上述實施形態中,雖進行邊緣附近區域951中的墨料量之增加、與圖案中央區域952中的墨料量之減少,但此等的處理亦可僅有其中一方在圖案形成裝置1中被執行。即便是在僅進行一方之處理的情況下,仍比無論是哪個處理都不被進行的情況更能夠在配線基板9上形成具有適當之厚度的阻劑膜92之圖案。In the above embodiment, although the increase in the amount of ink in the area near the
邊緣附近區域951係配合邊緣94之形狀而變化。從而,邊緣附近區域951之形狀係不限定於直線或折線而是具有複數種的形狀。圖案中央區域952亦成為與導電圖案91之形狀一致的複數種的形狀。The
在圖案形成裝置1中,只要頭部3係相對於載置台21相對地移動,就可採用複數種的構造作為移動機構2。例如亦可載置台21被固定而頭部3向X方向及Y方向移動。亦可頭部3向Y方向移動而載置台21向X方向移動。In the
頭部3中的噴出口之排列係可做複數種的變更,液滴之大小與噴出口之X方向的間距之關係亦可做複數種的變更。亦可藉由頭部3對於配線基板9的一次相對移動而在頭部3之下方的區域形成阻劑膜之圖案。The arrangement of the ejection ports in the
上述實施形態及各個變化例中的構成係只要不相互矛盾就可做適當組合。The configurations in the above-mentioned embodiment and each modification example can be appropriately combined as long as they do not contradict each other.
雖然已詳細描述並說明發明但是已述的說明為例示而非為限定。從而,可謂只要不脫離本發明之範圍就可有複數的變化或態樣。Although the invention has been described and illustrated in detail, the description that has been described is illustrative rather than limiting. Therefore, it can be said that a plurality of changes or aspects can be made without departing from the scope of the present invention.
1:圖案形成裝置
2:移動機構
2a:Y方向移動機構
2b:X方向移動機構
3:頭部
4:槽
5:電腦
8:記錄媒體
9:配線基板(印刷配線基板)
11:本體
12:控制部
21:載置台(保持部)
41:管件
51:中央處理單元
52:ROM
53:RAM
54:固定磁碟
55:顯示器
56:輸入部
56a:鍵盤
56b:滑鼠
57:讀取裝置
58:通信部
61:噴出資料生成部
611:邊緣提取部
612:修正部
613:轉換部
62:記憶部
71:導電圖案資料
72:阻劑圖案資料
75:噴出資料
80:程式
90:基材
91:導電圖案
92:阻劑膜
611:邊緣提取部
612:修正部
613:轉換部
931,932:區域
94:邊緣
951:邊緣附近區域
952:圖案中央區域
953:基材區域
954:中間區域1: Pattern forming device
2: mobile agency
2a: Y
[圖1]係顯示圖案形成裝置之外觀的立體圖。 [圖2]係顯示電腦之構成的圖。 [圖3]係顯示藉由電腦所實現之功能構成的圖。 [圖4]係顯示圖案形成裝置的動作之流程的圖。 [圖5]係例示導電圖案的圖。 [圖6]係例示在配線基板上形成有阻劑膜之樣態的圖。 [圖7]係顯示圖6中之VII-VII之位置上的配線基板之剖面的圖。 [圖8]係顯示圖6中之VII-VII之位置附近的配線基板之俯視圖。 [圖9]係顯示修正前之墨料量與配線基板之剖面的圖。 [圖10]係顯示修正後之墨料量與配線基板之剖面的圖。 [圖11]係顯示以修正前之墨料量進行墨料之賦予後的配線基板之剖面的圖。 [圖12]係顯示以修正後之墨料量進行墨料之賦予後的配線基板之剖面的圖。 [圖13]係顯示修正後的墨料量之另一例的圖。[Figure 1] is a perspective view showing the appearance of the pattern forming device. [Figure 2] is a diagram showing the structure of a computer. [Figure 3] is a diagram showing the functional composition realized by a computer. [Fig. 4] A diagram showing the flow of the operation of the pattern forming apparatus. [Fig. 5] A diagram illustrating a conductive pattern. [FIG. 6] A diagram illustrating a state in which a resist film is formed on a wiring board. [FIG. 7] A diagram showing the cross section of the wiring board at the position VII-VII in FIG. 6. [FIG. 8] A plan view showing the wiring board near the position of VII-VII in FIG. 6. [Figure 9] is a diagram showing the amount of ink and the cross section of the wiring board before correction. [Figure 10] is a diagram showing the corrected ink volume and the cross-section of the wiring board. [Fig. 11] is a diagram showing a cross section of the wiring board after applying ink with the amount of ink before correction. [Fig. 12] is a diagram showing a cross section of the wiring board after ink application is performed with the corrected ink amount. [Figure 13] is a diagram showing another example of the corrected ink amount.
90:基材 90: Substrate
91:導電圖案 91: Conductive pattern
92:阻劑膜 92: Resist film
951:邊緣附近區域 951: Area near the edge
952:圖案中央區域 952: Pattern Central Area
953:基材區域 953: substrate area
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