TW202027201A - Mounting device and mounting method wherein the semiconductor chip temporarily fixed on the substrate via an adhesive material containing thermosetting resin is mounted by thermocompression bonding - Google Patents

Abstract

The invention provides a mounting device and a mounting method, which can suppress the generation of internal stress that warps or undulates a substrate when a semiconductor chip is bonded to the substrate by thermocompression, and prevent a brittle or cleavage substrate from being cracked or broken. The above-mentioned mounting device performs thermocompression bonding of the semiconductor chip temporarily fixed on the substrate via a thermosetting adhesive, and includes an outer edge holding portion for holding an outer edge of the substrate, a bonding head having a pressing surface for pressing an area containing more than one semiconductor chip as a pressing area, a bonding station for supporting the pressing area from a back of the substrate, and a peripheral holding portion closer to an inner side of the substrate than the outer edge and at an outer side of the pressing area for sucking and holding from the back side of the substrate. The mounting method includes the steps of performing a thermocompression bonding of a semiconductor chip temporarily fixed on the substrate via a thermosetting adhesive, holding a substrate holding area set on the outer edge of the substrate by an outer edge holding member, sequentially changing the area to be subjected to the above-mentioned thermocompression bonding, supporting the area to be subjected to the above-mentioned thermocompression bonding on a plane from the back of the substrate when the semiconductor chip is subjected to thermocompression bonding, only pressing and heating the semiconductor chip in the area to be subjected to the above-mentioned thermocompression bonding, and sucking and holding the periphery of the area to be subjected to the thermocompression bonding from the back surface of the substrate by a peripheral holding member. Thus, according to the invention, the semiconductor chip temporarily fixed on the substrate via an adhesive material containing thermosetting resin is mounted by thermocompression bonding.

Description

安裝裝置及安裝方法Installation device and installation method

本發明係關於一種安裝裝置及安裝方法。具體而言係關於一種將經由包含熱固性樹脂等之接著材料暫時固定於基板上之半導體晶片進行熱壓接合而安裝之安裝裝置及安裝方法。The invention relates to an installation device and an installation method. Specifically, it relates to a mounting device and a mounting method for mounting a semiconductor wafer temporarily fixed on a substrate via an adhesive material containing a thermosetting resin or the like by thermocompression bonding.

於半導體安裝領域中，由於要求高密度化，作為三維安裝之晶圓上晶片方法(以下，記為「COW工法」)引人注目。COW工法係於構建有進行分割而成為半導體晶片之電路零件的晶圓上接合並安裝半導體晶片之工法，且係以一片晶圓作為基板而積層安裝多個半導體晶片者。In the field of semiconductor mounting, due to the demand for higher density, the chip-on-wafer method for three-dimensional mounting (hereinafter referred to as "COW method") has attracted attention. The COW method is a method of bonding and mounting semiconductor chips on a wafer on which circuit components that are divided into semiconductor chips are constructed, and a wafer is used as a substrate to stack multiple semiconductor chips.

於積層安裝中，使用如下製程，即，經由未硬化之熱固性接著劑將半導體晶片暫時固定於基板上後進行加熱壓接，將半導體晶片之凸塊熔融而接合於基板之電極，並且將熱固性樹脂硬化之製程(以下，記為「暫時正式分割製程」)。於該暫時正式分割製程中，由於可同時熱壓接合複數個半導體晶片，故而與將半導體晶片逐個地配置於規定部位並進行熱壓接合之情形相比，具有可縮短整體之產距時間之優點。In multi-layer mounting, the following process is used, that is, the semiconductor chip is temporarily fixed on the substrate via an uncured thermosetting adhesive, and then heated and compressed, the bumps of the semiconductor chip are melted and bonded to the electrodes of the substrate, and the thermosetting resin Hardening process (hereinafter referred to as "temporary formal division process"). In this temporary formal division process, since a plurality of semiconductor chips can be thermocompression bonded at the same time, it has the advantage of shortening the overall lead time compared with the case where the semiconductor chips are arranged one by one in a predetermined position and thermocompression bonding is performed. .

再者，該暫時正式分割製程利用熱固性樹脂將所有應安裝於基板上之半導體晶片暫時固定後進行熱壓接合。具體而言，於熱壓接合中，利用具有同時按壓複數個半導體晶片之按壓面之接合工具進行熱壓接合。更具體而言，熱壓接合時，利用接合台支持基板之背面，並且使用接合頭，一面加熱半導體晶片，一面對基板側加壓而使樹脂硬化。(例如，專利文獻1)。Furthermore, this temporary formal division process uses thermosetting resin to temporarily fix all semiconductor chips that should be mounted on the substrate and then perform thermocompression bonding. Specifically, in thermocompression bonding, thermocompression bonding is performed using a bonding tool having a pressing surface that simultaneously presses a plurality of semiconductor wafers. More specifically, during thermocompression bonding, the back surface of the substrate is supported by the bonding stage, and the bonding head is used to heat the semiconductor wafer while pressing against the substrate side to harden the resin. (For example, Patent Document 1).

又，於該暫時正式分割製程中，揭示有如下構成：以經暫時壓接之半導體晶片之硬化性接著劑不被加熱且硬化之方式自基板之上表面或下表面進行鼓風之構成(例如，專利文獻1)、或具備自下表面冷卻基板之冷卻塊之構成(例如，專利文獻2)。 [先前技術文獻] [專利文獻]In addition, in the temporary formal division process, the following structure is disclosed: a structure in which air is blown from the upper or lower surface of the substrate in such a way that the curable adhesive of the temporarily crimped semiconductor wafer is not heated and hardened (for example, , Patent Document 1), or a configuration with a cooling block that cools the substrate from the bottom surface (for example, Patent Document 2). [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2017-183481號公報 [專利文獻2]日本專利特開11-274227號公報[Patent Document 1] Japanese Patent Laid-Open No. 2017-183481 [Patent Document 2] Japanese Patent Laid-Open No. 11-274227

[發明所欲解決之問題][The problem to be solved by the invention]

將半導體晶片熱壓接合於基板時，分別自半導體晶片之上表面及基板之下表面傳遞熱，但與加熱區域相比，於其周邊之非加熱區域之上表面與下表面，溫度分佈不同。因此，熱壓接合中之基板由於上表面與下表面之熱膨脹之程度之差異，而於基板之內部產生應力(所謂的使基板翹曲之力)。When the semiconductor wafer is thermocompression-bonded to the substrate, heat is transferred from the upper surface of the semiconductor wafer and the lower surface of the substrate, respectively. However, compared with the heated area, the temperature distribution of the upper surface and the lower surface of the non-heated area around it is different. Therefore, due to the difference in the degree of thermal expansion between the upper surface and the lower surface of the substrate in the thermocompression bonding, stress is generated inside the substrate (the so-called force to warp the substrate).

又，成為熱壓接合對象之基板大多使用單晶矽或經薄板化之單晶矽經由黏著層積層於玻璃基片而成者，已知單晶矽具有脆性或解理性。In addition, most of the substrates used for thermocompression bonding are made of monocrystalline silicon or thinned monocrystalline silicon laminated on a glass substrate through adhesive lamination. It is known that monocrystalline silicon is brittle or cleavable.

另一方面，基板之外緣部為了使基板進行定位移動而被保持(夾持或吸附等)，該保持部位不會上下顛倒，但未被保持之基板之外緣或中央部會由於熱壓接合而產生翹曲或起伏。因此，根據因熱壓接合而產生之內部應力之強度，有具有脆性或解理性之基板破裂或產生皸裂之虞。On the other hand, the outer edge of the substrate is held for positioning and movement of the substrate (clamping or suction, etc.). The holding part will not be upside down, but the outer edge or central part of the substrate that is not held will be hot pressed Warpage or undulation due to joining. Therefore, depending on the strength of the internal stress generated by the thermocompression bonding, there is a possibility that the substrate with brittleness or cleavage may crack or crack.

再者，於專利文獻2所揭示之技術中，於下表面配置有冷卻塊，但若基板隨著熱膨脹而變形並自冷卻塊浮升，則不會進行熱傳遞(即冷卻)，且內部應力進一步增強。Furthermore, in the technique disclosed in Patent Document 2, a cooling block is arranged on the lower surface, but if the substrate deforms due to thermal expansion and rises from the cooling block, heat transfer (ie, cooling) will not occur, and internal stress Further enhancement.

因此，本發明係鑒於上述問題點而成者，其目的在於： 提供一種安裝裝置及安裝方法，該安裝裝置及安裝方法於將半導體晶片熱壓接合於基板時，抑制如使基板翹曲或起伏之內部應力之產生，防止具有脆性或解理性之基板破裂或產生皸裂。 [解決問題之技術手段]Therefore, the present invention was made in view of the above-mentioned problems, and its purpose is to: Provided is a mounting device and a mounting method, which suppresses the generation of internal stress such as warping or undulation of the substrate when a semiconductor chip is thermocompression-bonded to a substrate, and prevents the substrate with brittleness or cleavage from cracking or generating Chapped. [Technical means to solve the problem]

為了解決以上之問題，本發明之一態樣係一種安裝裝置，其特徵在於： 其係將經由熱固性接著劑而暫時固定於基板上之半導體晶片進行熱壓接合者，且具備： 外緣保持部，其保持基板之外緣； 接合頭，其具有將包含1個以上之半導體晶片之區域作為加壓區域而進行按壓之按壓面； 接合台，其自基板之背面支持加壓區域；及 周邊保持部，其將基板之較外緣更靠內側且為加壓區域之外側，自該基板之背面側予以吸附保持。In order to solve the above problems, one aspect of the present invention is a mounting device characterized by: It is a thermal compression bonding of a semiconductor chip temporarily fixed on a substrate via a thermosetting adhesive, and has: The outer edge holding part, which holds the outer edge of the substrate; A bonding head having a pressing surface for pressing an area containing more than one semiconductor chip as a pressing area; The bonding station, which supports the pressing area from the back of the substrate; and The peripheral holding portion, which holds the substrate on the inner side of the outer edge and outside the pressurized area, is sucked and held from the back side of the substrate.

又，本發明之另一態樣係一種安裝方法，其特徵在於：其係將經由熱固性接著劑而暫時固定於基板上之半導體晶片進行熱壓接合者，且 以外緣保持構件保持設定於基板之外緣之基板保持區域，並且依序變更要進行熱壓接合之區域，將半導體晶片進行熱壓接合時， 將要進行熱壓接合之區域自基板之背面支持於平面上， 僅對要進行熱壓接合之區域之半導體晶片加壓並加熱，另一方面， 以周邊保持構件自基板之背面吸附保持要進行熱壓接合之區域之周邊。In addition, another aspect of the present invention is a mounting method characterized in that it is a method of thermocompression bonding a semiconductor chip temporarily fixed on a substrate via a thermosetting adhesive, and The outer edge holding member holds the substrate holding area set at the outer edge of the substrate, and sequentially changes the area to be thermocompression bonded. When the semiconductor wafer is thermocompression bonded, Support the area to be thermocompression bonded on the plane from the back of the substrate, Only the semiconductor chip in the area to be thermocompression bonded is pressurized and heated. On the other hand, The periphery of the area to be thermocompression bonded is sucked and held from the back surface of the substrate by the peripheral holding member.

根據上述安裝裝置及安裝方法，由於利用周邊保持部自下表面吸附保持基板，故而可防止基板之翹曲或起伏、浮升等，可於周邊保持部傳遞而釋放多餘之熱。 [發明之效果]According to the above-mentioned mounting device and mounting method, since the peripheral holding portion adsorbs and holds the substrate from the lower surface, the substrate can be prevented from warping, undulating, and floating, and can be transferred to the peripheral holding portion to release excess heat. [Effects of Invention]

將半導體晶片熱壓接合於基板時，可抑制如使基板翹曲或起伏之內部應力之產生，且防止具有脆性或解理性之基板破裂或產生皸裂。When the semiconductor chip is thermocompression-bonded to the substrate, the generation of internal stress such as warping or undulation of the substrate can be suppressed, and the brittle or cleavage substrate can be prevented from cracking or cracking.

以下，使用圖對用以實施本發明之形態進行說明。Hereinafter, a mode for carrying out the present invention will be described using figures.

再者，於以下之說明中，將正交座標系統之3軸設為X、Y、Z，將水平方向表示為X方向、Y方向，將與XY平面垂直之方向(即重力方向)表示為Z方向。又，X方向表示左/右，Y方向表示近前/裏側。又，Z方向係與重力相反之方向表示上，重力作用方向表示下。又，將以Z方向為中心軸進行旋轉之方向設為θ方向。Furthermore, in the following description, the three axes of the orthogonal coordinate system are X, Y, Z, the horizontal direction is expressed as the X direction and Y direction, and the direction perpendicular to the XY plane (ie, the direction of gravity) is expressed as Z direction. In addition, the X direction represents left/right, and the Y direction represents near/inside. In addition, the Z direction is the direction opposite to gravity means up, and the direction of gravity means down. In addition, let the direction of rotation with the Z direction as the central axis be the θ direction.

圖1係表示實現本發明之形態之一例之整體構成的概略圖。圖1中示出本發明之安裝裝置1之概略圖。Fig. 1 is a schematic diagram showing the overall structure of an example of the embodiment of the present invention. Fig. 1 shows a schematic view of the mounting device 1 of the present invention.

安裝裝置1係將經由熱固性接著劑B暫時固定於基板W上之半導體晶片D進行熱壓接合者。具體而言，安裝裝置1具備外緣保持部2、接合頭3、接合台4、周邊保持部5、加壓位置變更部6、控制部9等。The mounting device 1 is a device for thermocompression bonding of a semiconductor chip D temporarily fixed on a substrate W via a thermosetting adhesive B. Specifically, the mounting device 1 includes an outer edge holding part 2, a bonding head 3, a bonding table 4, a peripheral holding part 5, a pressure position changing part 6, a control part 9, and the like.

再者，基板W係將安裝半導體晶片側之面稱為上表面或正面，將其相反側稱為下表面或背面。In addition, the surface of the substrate W on which the semiconductor wafer is mounted is called the upper surface or the front surface, and the opposite side is called the lower surface or the back surface.

外緣保持部2係保持基板W之外緣者。 具體而言，外緣保持部2係自背面保持基板W之外緣中預先設定之保持區域E1者。更具體而言，外緣保持部2具備保持板21，於保持板21設置有開口部22。該開口部22呈短邊比基板W之外形短、長邊比基板W之外形長之長方形之形狀，於配置基板W之部分(即，與保持區域E1重疊處)設置有凹部23。The outer edge holding portion 2 holds the outer edge of the substrate W. Specifically, the outer edge holding portion 2 holds a holding area E1 set in advance in the outer edge of the substrate W from the back surface. More specifically, the outer edge holding portion 2 includes a holding plate 21, and the holding plate 21 is provided with an opening 22. The opening 22 has a rectangular shape with a short side shorter than the outside of the substrate W and a long side longer than the outside of the substrate W. A recess 23 is provided in the portion where the substrate W is arranged (that is, overlapping with the holding area E1).

凹部23係於上表面形成有細孔或槽部，該等細孔或槽部經由電磁閥等與負壓吸引構件(真空泵、噴射器、負壓罐等)連接。再者，凹部23由於具有規定厚度，故而保持板21之下表面較基板W之下表面而言位於下方。The recess 23 is formed with pores or grooves on the upper surface, and the pores or grooves are connected to a negative pressure suction member (a vacuum pump, an ejector, a negative pressure tank, etc.) via a solenoid valve or the like. Furthermore, since the recess 23 has a predetermined thickness, the lower surface of the holding plate 21 is located below the lower surface of the substrate W.

外緣保持部2由於為此種構成，故而使基板W移動且將半導體晶片進行熱壓接合時，可不錯位地保持基板W。Since the outer edge holding portion 2 has such a structure, when the substrate W is moved and the semiconductor wafer is thermocompression-bonded, the substrate W can be held correctly.

接合頭3係將包含1個或複數個半導體晶片D之區域作為加壓區域Rp而進行按壓者。具體而言，接合頭3具備按壓面31、升降機構32、加熱器33等。The bonding head 3 is one that presses a region including one or more semiconductor wafers D as a pressurized region Rp. Specifically, the bonding head 3 includes a pressing surface 31, an elevating mechanism 32, a heater 33, and the like.

按壓面31係將成為熱壓接合對象之半導體晶片D加熱至所需溫度，或向基板W側按壓者。具體而言，按壓面31配置於與成為熱壓接合對象之半導體晶片D分開而相對向之位置。更具體而言，按壓面31較佳為與半導體晶片D相對向之面(即，下表面)包含銅或鋁或其合金等導熱性較高之金屬，平行度設為5 μm以下。The pressing surface 31 is one that heats the semiconductor wafer D to be the target of thermocompression bonding to a desired temperature, or presses the substrate W side. Specifically, the pressing surface 31 is arranged at a position facing away from and facing the semiconductor wafer D to be a thermocompression bonding target. More specifically, the pressing surface 31 is preferably a surface facing the semiconductor wafer D (ie, the lower surface) that contains a metal with high thermal conductivity such as copper, aluminum or an alloy thereof, and the parallelism is set to 5 μm or less.

升降機構32係使按壓面31與加熱器33於上下方向上移動者。具體而言，升降機構32具備氣壓式或油壓式缸、滾珠螺桿及伺服馬達或脈衝馬達、線性馬達等，可例示如下構成：基於來自控制部9之控制信號使按壓面31向基板W側移動(即，下降)，或向遠離基板W之方向移動(即，上升)。The lifting mechanism 32 is a person who moves the pressing surface 31 and the heater 33 in the vertical direction. Specifically, the lifting mechanism 32 includes a pneumatic or hydraulic cylinder, a ball screw, a servo motor, or a pulse motor, a linear motor, etc., and the following configuration can be exemplified: the pressing surface 31 is directed toward the substrate W based on a control signal from the control unit 9 Move (ie, descend), or move in a direction away from the substrate W (ie, rise).

加熱器33係加熱按壓面31者。具體而言，加熱器33可例示陶瓷加熱器，可例示如下構成：基於來自控制部9之控制信號加熱按壓面31而使其升溫，或停止加熱。再者，升降機構32經由安裝金屬件(未圖示)固定於裝置框架10f。The heater 33 heats the pressing surface 31. Specifically, the heater 33 may exemplify a ceramic heater, and may exemplify a configuration in which the pressing surface 31 is heated based on a control signal from the control unit 9 to increase the temperature thereof, or the heating is stopped. Furthermore, the elevating mechanism 32 is fixed to the device frame 10f via mounting hardware (not shown).

接合台4係自基板W之背面支持加壓區域Rp者。具體而言，接合台4配置於如與接合頭3之按壓面31相對向且夾著基板W之位置。更具體而言，接合台4具備支持面與支持面加熱器(未圖示)。The bonding stage 4 supports the pressing area Rp from the back surface of the substrate W. Specifically, the bonding stage 4 is arranged at a position facing the pressing surface 31 of the bonding head 3 and sandwiching the substrate W. More specifically, the bonding table 4 includes a support surface and a support surface heater (not shown).

支持面較佳為與基板W之背面相接之上表面包含銅或鋁或其合金等導熱性較高之金屬，平行度設為5 μm以下。The supporting surface is preferably in contact with the back surface of the substrate W and the upper surface includes a metal with high thermal conductivity such as copper, aluminum or its alloy, and the parallelism is set to 5 μm or less.

支持面加熱器係加熱支持面者。支持面加熱器可例示陶瓷加熱器，可例示如下構成：基於來自控制部9之控制信號加熱支持面而使其升溫，或停止加熱。The support surface heater is for heating the support surface. The support surface heater can be exemplified by a ceramic heater, and can be exemplified by a configuration in which the support surface is heated based on a control signal from the control unit 9 to increase the temperature, or the heating is stopped.

周邊保持部5係以與接合台4相同之保持高度對基板W自背面吸附而保持基板之較外緣而言之內側且加壓區域Rp之外側者。具體而言，周邊保持部5由與基板W之背面相接之上表面平坦之構件構成。更具體而言，周邊保持部5之上表面較佳為包含銅或鋁或其合金等導熱性較高之金屬，平行度設為5 μm以下。並且，於該上表面形成有細孔或槽部，該細孔或槽部經由電磁閥等與負壓吸引構件(真空泵、噴射器、負壓罐等)連接。再者，該細孔或槽部較佳為增大與接合台4相反之外緣側(即，基板W之外緣側)之孔徑或槽寬，或增加數量等，以設為增強負壓吸引力之構成。The peripheral holding portion 5 sucks the substrate W from the back surface at the same holding height as the bonding stage 4, and holds the inner side of the substrate from the outer edge and the outer side of the pressing area Rp. Specifically, the peripheral holding portion 5 is formed of a member having a flat upper surface in contact with the back surface of the substrate W. More specifically, the upper surface of the peripheral holding portion 5 preferably contains a metal with high thermal conductivity such as copper, aluminum or an alloy thereof, and the parallelism is set to 5 μm or less. In addition, a pore or groove is formed on the upper surface, and the pore or groove is connected to a negative pressure suction member (a vacuum pump, an ejector, a negative pressure tank, etc.) via a solenoid valve or the like. Furthermore, the pores or grooves are preferably to increase the hole diameter or groove width on the outer edge side (that is, the outer edge side of the substrate W) opposite to the bonding table 4, or increase the number, etc., to increase the negative pressure The composition of attraction.

再者，接合台4與周邊保持部5以各自之上表面能夠以相同保持高度自背面支持並保持基板W之方式隔著基座部45固定於裝置框架10f。In addition, the bonding table 4 and the peripheral holding portion 5 are fixed to the device frame 10f via the base portion 45 so that the upper surface of each can support and hold the substrate W from the back surface at the same holding height.

加壓位置變更部6係使外緣保持部2相對於接合頭3、接合台4及周邊保持部5進行相對移動，而依序變更加壓區域Rp者。具體而言，加壓位置變更部6具備X軸滑塊61與未圖示之Y軸滑塊。The pressurizing position changing unit 6 moves the outer edge holding unit 2 relative to the bonding head 3, the bonding table 4, and the peripheral holding unit 5 to sequentially change the pressurizing area Rp. Specifically, the pressing position changing unit 6 includes an X-axis slider 61 and a Y-axis slider (not shown).

X軸滑塊61係使外緣保持部2之保持板21於X方向上以規定速度移動或於規定位置靜止者。X軸滑塊61具備向X方向延伸之導軌62及沿導軌62以規定速度移動或於規定位置靜止之可動部63。進而，X軸滑塊61可例示利用組合未圖示之線性馬達或旋轉馬達與滾珠螺桿而成之構成使可動部63移動之構成，具備被稱為線性光學尺之編碼器(未圖示)。可動部63基於自控制部9輸出之控制信號而控制移動或靜止。並且，外緣保持部2之保持板21安裝於可動部63。The X-axis slider 61 is the one that makes the holding plate 21 of the outer edge holding portion 2 move at a predetermined speed in the X direction or stand still at a predetermined position. The X-axis slider 61 includes a guide rail 62 extending in the X direction and a movable portion 63 that moves along the guide rail 62 at a predetermined speed or is stationary at a predetermined position. Furthermore, the X-axis slider 61 can exemplify a structure in which the movable portion 63 is moved by a combination of a linear motor or a rotary motor and a ball screw, not shown, and includes an encoder called a linear scale (not shown) . The movable part 63 controls movement or stationary based on the control signal output from the control part 9. In addition, the holding plate 21 of the outer edge holding portion 2 is attached to the movable portion 63.

Y軸滑塊係使外緣保持部2之保持板21於Y方向上以規定速度移動或於規定位置靜止者。具體而言，將Y軸滑塊設為依照X軸滑塊61之構成。更具體而言，Y軸滑塊可配置於裝置框架10f與X軸滑塊61之間，亦可配置於X軸滑塊61與外緣保持部2之間。The Y-axis slider is the one that makes the holding plate 21 of the outer edge holding portion 2 move at a predetermined speed in the Y direction or stand still at a predetermined position. Specifically, the Y-axis slider is configured to conform to the configuration of the X-axis slider 61. More specifically, the Y-axis slider may be arranged between the device frame 10f and the X-axis slider 61, or between the X-axis slider 61 and the outer edge holding portion 2.

控制部9係當自所連接之外部機器輸入信號或資料，則按照預先登錄之程式或設定進行處理，且將處理結果輸出至外部機器者，且具有如下功能。 ・藉由外緣保持部2對基板W保持/解除保持 ・接合頭3之位置控制或按壓強度之控制 ・接合頭3或接合台4之溫度調節 ・以周邊保持部5對基板W吸附保持/解除保持 ・加壓區域Rp之依序變更。The control unit 9 is a device that inputs signals or data from a connected external device, processes it in accordance with pre-registered programs or settings, and outputs the processing result to the external device, and has the following functions. ・The substrate W is held/released by the outer edge holding part 2 ・Position control of bonding head 3 or control of pressing strength ・Temperature adjustment of bonding head 3 or bonding table 4 ・Suck and hold/release the substrate W with the peripheral holding part 5 ・Sequential change of pressure area Rp.

具體而言，控制部9係控制外緣保持部2之負壓吸引構件或電磁閥等、接合頭3之升降機構32或加熱器33、接合台4之支持面加熱器、周邊保持部5之負壓吸引構件或電磁閥等、加壓位置變更部6之X軸滑塊61、以及各部分之機器者。Specifically, the control section 9 controls the negative pressure suction member or solenoid valve of the outer edge holding section 2, the lifting mechanism 32 or heater 33 of the bonding head 3, the support surface heater of the bonding table 4, and the peripheral holding section 5. Negative pressure suction members, solenoid valves, etc., the X-axis slider 61 of the pressurizing position changing part 6, and the equipment of each part.

更具體而言，電腦部CN包括電腦或可程式化邏輯控制器等(即硬體)、及執行規定程序(詳情後述)之執行程式等(即軟體)。More specifically, the computer unit CN includes a computer or a programmable logic controller, etc. (ie, hardware), and an execution program, etc. (ie, software) that executes prescribed procedures (details will be described later).

圖2係表示實現本發明之形態之一例之主要部分的剖視圖。圖2中示出本發明之安裝裝置1之各部分之剖視圖。Fig. 2 is a cross-sectional view showing the main part of an example of the embodiment of the present invention. Fig. 2 shows a cross-sectional view of various parts of the mounting device 1 of the present invention.

如欲將暫時固定於基板W之最外周(圖中最左方)之半導體晶片D進行熱壓接合，則外緣保持部2之保持板21於X方向(圖中右方)移動，開口部22之左方內緣25移動至實線所示之位置。並且，開口部22之左方內緣25與周邊保持部5之左方外端部55最接近之距離成為間隙C1。並且，開口部22之左方內緣25與周邊保持部5之左方外端部55接觸之位置及其外側(圖中左方)成為基板保持部2之可動干涉區域H1。To perform thermocompression bonding of the semiconductor chip D temporarily fixed to the outermost periphery of the substrate W (the leftmost in the figure), the holding plate 21 of the outer edge holding portion 2 moves in the X direction (right in the figure), and the opening The left inner edge 25 of 22 moves to the position shown by the solid line. In addition, the closest distance between the left inner edge 25 of the opening 22 and the left outer end 55 of the peripheral holding portion 5 is the gap C1. In addition, the position where the left inner edge 25 of the opening 22 contacts the left outer end 55 of the peripheral holding portion 5 and the outside (left in the figure) become the movable interference region H1 of the substrate holding portion 2.

另一方面，如欲將暫時固定於基板W之相反側之最外周(圖中最右方)之半導體晶片D進行熱壓接合，則外緣保持部2之保持板21於X方向(圖中左方)移動，開口部22之右方內緣27移動至虛線所示之位置。並且，開口部22之右方內緣27與周邊保持部5之右方外端部57最接近之距離成為間隙C2。並且，開口部22之右方內緣27與周邊保持部5之右方外端部57接觸之位置及其外側(圖中右方)成為基板保持部2之可動干涉區域H1。On the other hand, if the semiconductor wafer D temporarily fixed to the outermost periphery (the rightmost in the figure) on the opposite side of the substrate W is to be thermocompression bonded, the holding plate 21 of the outer edge holding portion 2 is in the X direction (in the figure The left) moves, and the right inner edge 27 of the opening 22 moves to the position shown by the dotted line. In addition, the closest distance between the right inner edge 27 of the opening 22 and the right outer end 57 of the peripheral holding portion 5 becomes the gap C2. In addition, the position where the right inner edge 27 of the opening 22 contacts the right outer end 57 of the peripheral holding portion 5 and the outside (right in the figure) become the movable interference area H1 of the substrate holding portion 2.

即，依序變更成為熱壓接合對象之半導體晶片D之加壓區域Rp時，即便於欲將暫時固定於最外周之半導體晶片D進行熱壓接合時，亦以上述間隙C1、C2不成為零之方式，將外緣保持部2之保持板21之可動干涉區域H1設定在較周邊保持部5之左方外端部55及右方外端部57更靠外側。再者，為了不使該間隙C1、C2成為零，而於X軸滑塊61安裝未圖示之機械止動部或感測器，或將可移動範圍等預先登錄於控制部9等。That is, when sequentially changing the pressurized area Rp of the semiconductor wafer D to be the object of thermocompression bonding, even when the semiconductor wafer D temporarily fixed to the outermost periphery is to be thermocompressed, the gaps C1 and C2 do not become zero. In this way, the movable interference area H1 of the holding plate 21 of the outer edge holding portion 2 is set to be more outside than the left outer end 55 and the right outer end 57 of the peripheral holding portion 5. Furthermore, in order not to make the gaps C1 and C2 zero, a mechanical stopper or a sensor (not shown) is attached to the X-axis slider 61, or the movable range is registered in the control unit 9 and the like in advance.

另一方面，關於Y方向，亦以外緣保持部2之保持板21與周邊保持部5之端部不接觸之方式，於Y軸滑塊安裝機械止動部或感測器，並將可移動範圍等登錄至控制部9等。On the other hand, regarding the Y direction, the holding plate 21 of the outer edge holding portion 2 does not contact the end of the peripheral holding portion 5, and a mechanical stop or sensor is installed on the Y-axis slider to move The range and the like are registered in the control unit 9 and the like.

[動作流程] 以下，對使用上述安裝裝置1，將經由熱固性接著劑暫時固定於基板W上之半導體晶片D進行熱壓接合之安裝方法進行詳細說明。[Operation Flow] Hereinafter, a mounting method for thermocompression bonding of the semiconductor wafer D temporarily fixed on the substrate W via a thermosetting adhesive using the above-mentioned mounting device 1 will be described in detail.

圖3係實現本發明之形態之一例之流程圖。Fig. 3 is a flow chart of an example of a mode for realizing the present invention.

首先，預先使外緣保持部2之保持板21成為第1保持姿勢，藉由人手或基板搬送機械手等，將基板W載置於保持板21之凹部23(步驟s11)。繼而，向凹部23作用負壓，保持基板W之外緣之保持區域E1(步驟s12)。First, the holding plate 21 of the outer edge holding portion 2 is set in the first holding posture in advance, and the substrate W is placed in the recess 23 of the holding plate 21 by a human hand or a substrate transport robot or the like (step s11). Next, a negative pressure is applied to the recess 23 to hold the holding area E1 at the outer edge of the substrate W (step s12).

其次，控制加壓位置變更部6之X軸載台61，而定位移動至加壓區域Rp(步驟s13)。繼而，利用周邊保持部5吸附保持基板W之背面(步驟s14)，並進行熱壓接合(步驟s15)。若該位置之熱壓接合結束，則解除利用周邊保持部5之吸附保持(步驟s16)。Next, the X-axis stage 61 of the pressurization position changing unit 6 is controlled to position and move to the pressurization area Rp (step s13). Then, the back surface of the substrate W is sucked and held by the peripheral holding portion 5 (step s14), and thermocompression bonding is performed (step s15). When the thermocompression bonding at this position is completed, the suction holding by the peripheral holding portion 5 is released (step s16).

繼而，判斷是否存在應進行熱壓接合之下一半導體晶片D(步驟s21)，若存在下一半導體晶片D，則重複上述步驟s13以後。另一方面，若不存在應進行熱壓接合之下一半導體晶片D，則移動至基板之交接位置，解除基板之外緣之保持(步驟s22)，抽出熱壓接合結束之基板W(步驟s23)。Then, it is judged whether there is a semiconductor wafer D under thermocompression bonding (step s21), and if there is a next semiconductor wafer D, the above step s13 and beyond are repeated. On the other hand, if there is no semiconductor chip D under thermocompression bonding, move to the transfer position of the substrate, release the holding of the outer edge of the substrate (step s22), and extract the substrate W after thermocompression bonding (step s23) ).

繼而，判斷是否存在應進行熱壓接合之下一基板W(步驟s24)，若存在下一基板W，則重複上述步驟s11～s23。另一方面，若不存在下一基板W，則結束一系列動作。Then, it is determined whether there is a substrate W under thermocompression bonding (step s24), and if there is a next substrate W, the above steps s11 to s23 are repeated. On the other hand, if the next substrate W does not exist, the series of operations ends.

如此，若使用本發明之安裝裝置，則於使用接合頭3及接合台4將半導體晶片D熱壓接合於基板W時，利用周邊保持部5自下表面吸附保持基板W，故而可防止基板W浮升。此時，自基板W之加熱區域Rp傳遞至周邊部之多餘之熱可於周邊保持部2傳遞而釋放，故而在基板W未作用有過度之內部應力，可防止具有脆性或解理性之基板破裂或產生皸裂。In this way, if the mounting device of the present invention is used, when the semiconductor wafer D is thermocompression-bonded to the substrate W using the bonding head 3 and the bonding stage 4, the peripheral holding portion 5 is used to suck and hold the substrate W from the lower surface, thereby preventing the substrate W Float. At this time, the excess heat transferred from the heating region Rp of the substrate W to the peripheral portion can be transferred and released at the peripheral holding portion 2, so that excessive internal stress is not applied to the substrate W, which can prevent the brittle or cleavage substrate from cracking Or cracked.

[關於加壓位置變更部] 再者，安裝裝置1就實現本發明而言，加壓位置變更部6並非必需構成，只要具備外緣保持部2、接合頭3、接合台4及周邊保持部5即可，發揮上述作用、效果。[About the pressurization position change section] Furthermore, for the mounting device 1 to realize the present invention, the pressurizing position changing portion 6 is not necessarily constituted, as long as it has the outer edge holding portion 2, the bonding head 3, the bonding table 4, and the peripheral holding portion 5, which can perform the above-mentioned functions, effect.

另一方面，本發明之安裝裝置1較佳為設為如下構成：具備加壓位置變更部6，且依序變更作為熱壓接合對象之半導體晶片D之加壓區域Rp時所產生之外緣保持部2之可動干涉區域H1較周邊保持部5而言設定於外側。On the other hand, it is preferable that the mounting device 1 of the present invention has a configuration that includes a pressurizing position changing portion 6 and sequentially changes the outer edge generated when the pressurized region Rp of the semiconductor wafer D to be thermocompression bonded The movable interference region H1 of the holding portion 2 is set outside the peripheral holding portion 5.

例如，在參考如專利文獻2之圖1所揭示之機器配置之情形時，存在如下問題：若為了將暫時壓接於基板之外周部之半導體晶片進行熱壓接合而使基板支持塊移動，則基板支持塊與冷卻塊干涉，無法將該半導體晶片進行熱壓接合。For example, when referring to the configuration of the machine as disclosed in FIG. 1 of Patent Document 2, there is a problem as follows: If the substrate support block is moved in order to perform thermocompression bonding of a semiconductor wafer temporarily crimped to the outer periphery of the substrate, The substrate support block interferes with the cooling block, and the semiconductor wafer cannot be thermocompression bonded.

但，若使用本發明之安裝裝置1，則即便移動至基板W之最外周之加壓區域Rp之按壓位置，周邊保持部5亦不幹涉外緣保持部2。進而，利用周邊保持部5自背面吸附保持基板W，故而可傳導/釋放施加於基板W之熱。However, if the mounting device 1 of the present invention is used, even if it moves to the pressing position of the pressing area Rp of the outermost periphery of the substrate W, the peripheral holding portion 5 does not interfere with the outer edge holding portion 2. Furthermore, the substrate W is sucked and held from the back surface by the peripheral holding portion 5, so that the heat applied to the substrate W can be conducted/released.

再者，上文中，作為實現本發明之形態之一例，例示一種安裝裝置1，該安裝裝置1具備構成為接合頭3、接合台4及周邊保持部5固定於裝置框架10f且X軸滑塊61與Y軸滑塊於X方向或Y方向上使保持板21定位移動之加壓位置變更部6。Furthermore, in the foregoing, as an example of the implementation of the present invention, a mounting device 1 is exemplified. The mounting device 1 includes a bonding head 3, a bonding table 4, and a peripheral holding portion 5 fixed to the device frame 10f and an X-axis slider 61 and the Y-axis slider block the pressing position changing portion 6 that moves the holding plate 21 in the X direction or the Y direction.

但，加壓位置變更部6並不限定於此種構成，可設為如下構成：X軸滑塊61與Y軸滑塊之兩者或一者使接合頭3、接合台4及周邊保持部5於X方向或Y方向上定位移動。再者，即便於該情形時，依序變更作為熱壓接合對象之半導體晶片D之加壓區域Rp時所產生之外緣保持部2之可動干涉區域H1亦較周邊保持部5而言設定於外側。However, the pressurizing position changing portion 6 is not limited to such a configuration, and may be configured as follows: both or one of the X-axis slider 61 and the Y-axis slider uses the bonding head 3, the bonding table 4, and the peripheral holding portion 5 Positioning and moving in the X direction or Y direction. Furthermore, even in this case, the movable interference region H1 of the outer edge holding portion 2 generated when the pressurized area Rp of the semiconductor wafer D to be thermocompression bonding is sequentially changed is set to be higher than that of the peripheral holding portion 5. Outside.

若為此種構成，則可使用安裝裝置1，一面依序變更暫時固定於基板W上之作為熱壓接合對象之半導體晶片D之加壓區域Rp，一面進行熱壓接合。With such a configuration, the mounting device 1 can be used to sequentially change the pressure region Rp of the semiconductor wafer D temporarily fixed on the substrate W, which is the target of thermocompression bonding, and perform thermocompression bonding.

[關於外緣保持部] 再者，上文中描述了如下構成：具備X軸滑塊61與Y軸滑塊，且外緣保持部2之可動干涉區域H1較周邊保持部5而言設定於外側，確保XY方向之間隙。於該情形時，基板W之保持區域E1設定於如圖1、2所示之Y方向之兩端部。[About the outer edge holding part] Furthermore, the above described the configuration in which the X-axis slider 61 and the Y-axis slider are provided, and the movable interference region H1 of the outer edge holding portion 2 is set outside of the peripheral holding portion 5 to ensure a gap in the XY direction. In this case, the holding area E1 of the substrate W is set at both ends in the Y direction as shown in FIGS. 1 and 2.

再者，若作為熱壓接合對象之半導體晶片D並未暫時壓接於保持區域E1之附近，則保持板21一面以該姿勢(稱為第1保持姿勢)依序變更全部加熱區域，一面進行熱壓接合。Furthermore, if the semiconductor wafer D to be thermocompression-bonded is not temporarily crimped in the vicinity of the holding area E1, the holding plate 21 will sequentially change all the heating areas in this posture (referred to as the first holding posture). Compression bonding.

另一方面，於成為熱壓接合對象之半導體晶片D以第1保持姿勢暫時壓接於基板W之保持區域E1之上方或附近之情形時，殘留無法進行熱壓接合之部位，故而將保持板21保持為第1保持姿勢，且暫時解除基板W之吸附後，使基板W旋轉90度並進行再吸附，將剩餘之半導體晶片D進行熱壓接合即可。On the other hand, when the semiconductor wafer D to be the subject of thermocompression bonding is temporarily crimped above or near the holding area E1 of the substrate W in the first holding position, a portion where thermocompression bonding cannot be performed remains, so the holding plate After 21 is maintained in the first holding posture and the adsorption of the substrate W is temporarily released, the substrate W is rotated 90 degrees and re-adsorbed, and the remaining semiconductor wafer D can be thermocompression bonded.

或者，暫時於利用頂起銷等支持基板W之狀態下解除保持板21之吸附，使保持板21旋轉90度(將該姿勢稱為第2保持姿勢)，利用保持板21之凹部23吸附保持基板W之保持區域E2即可。Alternatively, temporarily release the suction of the holding plate 21 while supporting the substrate W with a jack-up pin or the like, rotate the holding plate 21 by 90 degrees (this posture is referred to as the second holding posture), and suction and hold the holding plate 21 by the recess 23 The holding area E2 of the substrate W is sufficient.

於該情形時，外緣保持部2具備保持姿勢切換部，該保持姿勢切換部切換保持基板W之外緣中預先設定之第1保持區域E1之第1保持姿勢與保持預先設定之第2保持區域E2之第2保持姿勢， 以第1保持姿勢依序變更加壓區域Rp時所產生之外緣保持部2之可動干涉區域H1較周邊保持部5而言設定於外側，且 以第2保持姿勢依序變更加壓區域Rp時所產生之外緣保持部2之可動干涉區域H2較周邊保持部2而言設定於外側。In this case, the outer edge holding portion 2 includes a holding posture switching portion that switches between holding the first holding posture of the first holding area E1 set in advance on the outer edge of the substrate W and holding the pre-set second holding The second hold posture in area E2, The movable interference area H1 of the outer edge holding portion 2 generated when the pressurizing area Rp is sequentially changed in the first holding posture is set to the outside than the peripheral holding portion 5, and The movable interference area H2 of the outer edge holding portion 2 that is generated when the pressurizing area Rp is sequentially changed in the second holding posture is set outside the peripheral holding portion 2.

具體而言，保持姿勢切換部可例示如下構成：組合旋轉馬達與齒輪等，且以基板W之中心為旋轉中心進行旋轉。或者，保持姿勢切換部可設為具備DD(direct drive，直接驅動)馬達或分度器之構成即可。Specifically, the holding posture switching unit can be exemplified by a configuration in which a rotation motor, gears, etc. are combined, and the substrate W is rotated with the center of the substrate W as the rotation center. Alternatively, the holding position switching unit may be configured to include a DD (direct drive) motor or an indexer.

圖4係表示實現本發明之形態之一例之第1保持姿勢及第2保持姿勢的俯視圖。Fig. 4 is a plan view showing a first holding posture and a second holding posture of an example of the embodiment of the present invention.

圖4(a)中示出外緣保持部2之保持板21處於第1保持姿勢之狀態，且示出以保持板21之凹部23吸附保持基板W之保持區域E1之情況。圖中，第1保持姿勢下之外緣保持部2之可動干涉區域H1以影線表示。具體而言，可動干涉區域H1設定在較保持板21之開口部22之內緣更靠內側，且為與周邊保持部5於左側、右側、近前側、裏側隔開規定間隙C1～C4之以虛線所示之區域之外側。FIG. 4(a) shows the state where the holding plate 21 of the outer edge holding portion 2 is in the first holding posture, and shows a state where the holding area E1 of the substrate W is sucked and held by the recess 23 of the holding plate 21. In the figure, the movable interference area H1 of the outer edge holding portion 2 in the first holding posture is indicated by hatching. Specifically, the movable interference area H1 is set to be more inside than the inner edge of the opening 22 of the retaining plate 21, and is separated from the peripheral retaining portion 5 by predetermined gaps C1 to C4 on the left, right, front, and back sides Outside the area shown by the dashed line.

圖4(b)中示出外緣保持部2之保持板21處於第2保持姿勢之狀態，且示出以保持板21之凹部23吸附保持基板W之保持區域E2之情況。圖中，第2保持姿勢下之外緣保持部2之可動干涉區域H2以影線表示。具體而言，可動干涉區域H2設定在較保持板21之開口部22之內緣更靠內側，且為與周邊保持部5於左側、右側、近前側、裏側隔開規定間隙C1～C4之以虛線所示之區域之外側。Fig. 4(b) shows a state where the holding plate 21 of the outer edge holding portion 2 is in the second holding posture, and shows a state in which the recess 23 of the holding plate 21 sucks and holds the holding area E2 of the substrate W. In the figure, the movable interference area H2 of the outer edge holding portion 2 in the second holding posture is indicated by hatching. Specifically, the movable interference region H2 is set to be more inside than the inner edge of the opening 22 of the retaining plate 21, and is separated from the peripheral retaining portion 5 by predetermined gaps C1 to C4 on the left, right, front, and back sides Outside the area shown by the dashed line.

又，於圖4(a)(b)中改變視點，以虛線表示接合台4與周邊保持部5以保持板21為基準而相對移動時最接近之位置。如圖所示，即便使接合台4與周邊保持部5相對於外緣保持部2相對移動而變更加壓區域，周邊保持部5之左側、右側、近前側、裏側之外緣仍與保持板21之開口部22之內緣保持規定間隙C1～C4。In addition, in FIG. 4(a)(b), the point of view is changed, and the dotted line indicates the closest position when the joining table 4 and the peripheral holding portion 5 move relatively with the holding plate 21 as a reference. As shown in the figure, even if the joining table 4 and the peripheral holding portion 5 are moved relative to the outer edge holding portion 2 to change the pressure area, the outer edges of the left, right, front, and back sides of the peripheral holding portion 5 are still connected to the holding plate The inner edge of the opening 22 of 21 maintains predetermined gaps C1 to C4.

即，藉由切換第1保持姿勢及第2保持姿勢，不僅基板W之中央部或X方向之最外周，於Y方向上亦可遍及最外周將半導體晶片D進行熱壓接合，並且可防止熱壓接合時之基板W翹曲。That is, by switching between the first holding posture and the second holding posture, not only the center portion of the substrate W or the outermost periphery in the X direction, but also the semiconductor chip D can be thermocompression bonded throughout the outermost periphery in the Y direction, and heat can be prevented. The substrate W warped during press bonding.

再者，是否要對保持板21切換第1保持姿勢及第2保持姿勢，在圖3所例示之一系列流程中，於步驟s16之後進行判斷。並且，若需變更姿勢，則將保持板21自第1保持姿勢切換成第2保持姿勢。另一方面，若無需變更姿勢，則保持板21維持第1保持姿勢。Furthermore, whether to switch between the first holding posture and the second holding posture of the holding plate 21 is determined after step s16 in a series of processes illustrated in FIG. 3. In addition, if the posture needs to be changed, the holding plate 21 is switched from the first holding posture to the second holding posture. On the other hand, if there is no need to change the posture, the holding plate 21 maintains the first holding posture.

再者，就實現本發明而言，外緣保持部2不限於具備上述之長方形狀之外形及開口外緣之形狀之保持板21之構成，亦可設為具備如下所述之形狀之保持板21B之構成。Furthermore, in terms of realizing the present invention, the outer edge holding portion 2 is not limited to the structure of the holding plate 21 having the above-mentioned rectangular shape and the shape of the opening outer edge, and may be a holding plate having the following shape The composition of 21B.

圖5係表示實現本發明之形態之另一例之第1保持姿勢及第2保持姿勢的俯視圖。圖5(a)中示出外緣保持部2之保持板21B處於第1保持姿勢之狀態。圖5(b)中示出外緣保持部2之保持板21B處於第2保持姿勢之狀態。Fig. 5 is a plan view showing the first holding posture and the second holding posture of another example of the form of realizing the present invention. Fig. 5(a) shows a state where the holding plate 21B of the outer edge holding portion 2 is in the first holding posture. Fig. 5(b) shows a state where the holding plate 21B of the outer edge holding portion 2 is in the second holding posture.

保持板21B設置有開口部22B，但該開口部22B呈組合平行之直線與圓弧而成之大致長孔狀之形狀，於配置基板W之部分(即，與保持區域E1重疊處)設置有凹部23B。圖中，第1保持姿勢、第2保持姿勢下之外緣保持部2之可動干涉區域H1、H2以影線表示。具體而言，可動干涉區域H1、H2設定於較保持板21B之開口部22B之內緣更靠內側，且為與周邊保持部5於左側、右側、近前側、裏側隔開規定間隙C1～C4之以虛線所示之區域之外側。The holding plate 21B is provided with an opening 22B, but the opening 22B is in the shape of a substantially long hole formed by combining parallel straight lines and arcs, and is provided at the portion where the substrate W is arranged (that is, where it overlaps the holding area E1) Recess 23B. In the figure, the movable interference regions H1 and H2 of the outer edge holding portion 2 in the first holding posture and the second holding posture are indicated by hatching. Specifically, the movable interference regions H1 and H2 are set to be more inside than the inner edge of the opening 22B of the holding plate 21B, and are separated from the peripheral holding portion 5 by predetermined gaps C1 to C4 on the left, right, front, and back sides It is outside the area shown by the dotted line.

又，於圖5(a)(b)中，改變視點，以保持板21B為基準而讓接合台4與周邊保持部5進行相對移動時最接近之位置以虛線表示。如圖所示，即便使接合台4與周邊保持部5相對於外緣保持部2進行相對移動而變更加壓區域，周邊保持部5之左側、右側、近前側、裏側之外緣亦與保持板21B之開口部22B之內緣保持規定間隙C1～C4。In addition, in FIG. 5(a)(b), the point of view is changed, and the closest position when the bonding table 4 and the peripheral holding portion 5 are moved relative to each other with the holding plate 21B as a reference is indicated by a broken line. As shown in the figure, even if the joining table 4 and the peripheral holding portion 5 are moved relative to the outer edge holding portion 2 to change the pressure area, the outer edges of the left, right, front, and back sides of the peripheral holding portion 5 are also consistent with the holding The inner edge of the opening 22B of the plate 21B maintains predetermined gaps C1 to C4.

由於成為此種構成，故而外緣保持部2藉由切換第1保持姿勢及第2保持姿勢，不僅基板W之中央部或X方向之最外周，於Y方向上亦可遍及最外周將半導體晶片D進行熱壓接合，並且可防止熱壓接合時之基板W之翹曲。With this structure, the outer edge holding portion 2 switches between the first holding posture and the second holding posture, so that not only the center part of the substrate W or the outermost periphery in the X direction, but also the semiconductor wafer can be placed all over the outermost periphery in the Y direction. D performs thermocompression bonding, and can prevent warpage of the substrate W during thermocompression bonding.

再者，上文中示出如下構成：外緣保持部2自背面負壓吸引並保持基板W之外緣中預先設定之保持區域E1、E2。若為此種構成，除可發揮必需之保持力以外，亦可利用電磁閥等容易且迅速地進行負壓吸引與吸引解除(由大氣釋放或壓空導入所導致之吸附破壞)之切換，故而較佳。In addition, the configuration described above is that the outer edge holding portion 2 sucks and holds the holding areas E1 and E2 set in advance in the outer edge of the substrate W from the negative pressure on the back surface. With this structure, in addition to the necessary holding power, a solenoid valve can also be used to easily and quickly switch between negative pressure suction and suction release (absorption destruction caused by atmospheric release or pressure air introduction). Better.

但，外緣保持部2並不限定於此種構成，亦可設為如下之構成。 (1)自正面吸附或夾持而保持基板W之外緣之構成 (2)自側方夾持而保持基板W之外緣之構成 即，為如下構成即可：外緣保持部2之可動干涉區域較周邊保持部5而言設定於外側(即，上方)，即便使基板W於XY方向(水平方向)上移動，外緣保持部2與周邊保持部5亦不相互接觸。However, the outer edge holding portion 2 is not limited to such a configuration, and may be the following configuration. (1) The structure to hold the outer edge of the substrate W by sucking or clamping from the front (2) The structure to hold the outer edge of the substrate W by clamping from the side That is, the following configuration is sufficient: the movable interference area of the outer edge holding portion 2 is set to the outside (that is, above) than the peripheral holding portion 5, even if the substrate W is moved in the XY direction (horizontal direction), the outer edge remains The part 2 and the peripheral holding part 5 are also not in contact with each other.

[關於周邊保持部] 再者，上文中，周邊保持部5例示藉由負壓吸引吸附保持基板W之構成。若為此種構成，則除可發揮必需之保持力以外，亦可利用電磁閥等容易且迅速地進行負壓吸引與吸引解除(由大氣釋放或壓空導入所導致之吸附破壞)之切換，故而較佳。[About Peripheral Holding Department] In addition, in the above, the peripheral holding portion 5 exemplifies a structure in which the substrate W is sucked and held by negative pressure. With this structure, in addition to exerting the necessary holding force, a solenoid valve or the like can be used to easily and quickly switch between negative pressure suction and suction release (absorption failure caused by atmospheric release or pressure air introduction). Therefore it is better.

但，周邊保持部5不限於負壓吸引方式，亦可為藉由靜電吸附方式吸附保持基板W之構成。即便為此種構成，亦可防止基板之翹曲或起伏、浮升等，可於周邊保持部傳遞而釋放多餘之熱。However, the peripheral holding portion 5 is not limited to the negative pressure suction method, and may be a structure in which the substrate W is adsorbed and held by an electrostatic suction method. Even with this structure, warping, undulation, and floating of the substrate can be prevented, and excess heat can be transferred to the peripheral holding portion to release excess heat.

再者，周邊保持部5可於常溫或環境溫度下使用，但於伴隨著熱壓接合之加熱量較大之情形時，可為具備將周邊保持部5冷卻至低於環境溫度之溫度之冷卻構件之構成。藉此，即便於伴隨著熱壓接合之加熱量較大之情形時，亦可確實地防止由傳遞至基板W之加熱區域Rp之周邊之熱所導致之基板W之翹曲。Furthermore, the peripheral holding part 5 can be used at room temperature or ambient temperature, but when the heating amount accompanying the thermocompression bonding is large, it can be equipped with cooling that cools the peripheral holding part 5 to a temperature lower than the ambient temperature The composition of the component. Thereby, even when the heating amount accompanying thermocompression bonding is large, the warpage of the substrate W caused by the heat transferred to the periphery of the heating region Rp of the substrate W can be reliably prevented.

再者，上文中，接合台4與周邊保持部5例示各自之上表面以相同保持高度固定，且自背面支持並保持基板W之構成。若為該構成，則可簡化構造，適合於避免在熱壓接合時使基板W產生翹曲或起伏。但，就實現本發明而言，關於接合台4與周邊保持部5，各自之上表面以相同保持高度固定並非必需構成。即，周邊保持部5為以利用外緣保持部2所保持之基板W之姿勢於熱壓接合前後不發生變化之方式，自背面保持基板W之構成即可。例如，可設為如下構成：預先使周邊保持部5之上表面較接合台4之上表面而言退避至下方，於即將進行熱壓接合前以靠近作為保持對象之基板W之背面之方式使周邊保持部5之上表面上升，而自背面吸附保持周邊保持部5基板W之構成。Furthermore, in the above, the bonding table 4 and the peripheral holding portion 5 exemplify the structure in which the upper surface of each is fixed at the same holding height, and the substrate W is supported and held from the back surface. With this structure, the structure can be simplified, and it is suitable for avoiding warping or undulation of the substrate W during thermocompression bonding. However, in terms of realizing the present invention, it is not necessary that the upper surfaces of the joining table 4 and the peripheral holding portion 5 are fixed at the same holding height. That is, the peripheral holding portion 5 may be configured to hold the substrate W from the back surface so that the posture of the substrate W held by the outer edge holding portion 2 does not change before and after thermocompression bonding. For example, it may be configured as follows: the upper surface of the peripheral holding portion 5 is retracted below the upper surface of the bonding table 4 in advance, and immediately before the thermocompression bonding is performed, it is placed close to the back surface of the substrate W to be held. The upper surface of the peripheral holding portion 5 rises, and the substrate W of the peripheral holding portion 5 is sucked and held from the back surface.

1:安裝裝置 2:外緣保持部 3:接合頭 4:接合台 5:周邊保持部 6:加壓位置變更部 9:控制部 10f:框架 21:保持板 21B:保持板 22:開口部 22B:開口部 23:凹部 23B:凹部 25:左方內緣 26:右方內緣 27:右方內緣 31:按壓面 32:升降機構 33:加熱器 45:基座部 55:左方外端部 56:右方外端部 61:X軸滑塊 62:導軌 63:可動部 C1～C4:間隙 D:半導體晶片 E1:保持區域 E2:保持區域 H1:可動干涉區域 H2:可動干涉區域 Rp:加壓區域 W:基板1: Install the device 2: Outer edge holding part 3: Joint head 4: Bonding table 5: Peripheral holding part 6: Pressing position change part 9: Control Department 10f: frame 21: Keep the board 21B: Holding board 22: Opening 22B: Opening 23: recess 23B: recess 25: Left inner edge 26: Right inner edge 27: Right inner edge 31: pressing surface 32: Lifting mechanism 33: heater 45: Base 55: Left outer end 56: Right outer end 61: X-axis slider 62: Rail 63: movable part C1～C4: gap D: Semiconductor wafer E1: hold area E2: hold area H1: movable interference area H2: movable interference area Rp: pressurized area W: substrate

圖1係表示實現本發明之形態之一例之整體構成的概略圖。 圖2係表示實現本發明之形態之一例之主要部分的剖視圖。 圖3係實現本發明之形態之一例之流程圖。 圖4(a)、(b)係表示實現本發明之形態之一例之第1保持姿勢及第2保持姿勢的俯視圖。 圖5(a)、(b)係表示實現本發明之形態之另一例之第1保持姿勢及第2保持姿勢的俯視圖。Fig. 1 is a schematic diagram showing the overall structure of an example of the embodiment of the present invention. Fig. 2 is a cross-sectional view showing the main part of an example of the embodiment of the present invention. Fig. 3 is a flow chart of an example of a mode for realizing the present invention. 4(a) and (b) are plan views showing a first holding posture and a second holding posture of an example of the embodiment of the present invention. 5(a) and (b) are plan views showing the first holding posture and the second holding posture of another example of the form of realizing the present invention.

1:安裝裝置 1: Install the device

2:外緣保持部 2: Outer edge holding part

3:接合頭 3: Joint head

4:接合台 4: Bonding table

5:周邊保持部 5: Peripheral holding part

6:加壓位置變更部 6: Pressing position change part

9:控制部 9: Control Department

10f:框架 10f: frame

21:保持板 21: Keep the board

22:開口部 22: Opening

23:凹部 23: recess

31:按壓面 31: pressing surface

32:升降機構 32: Lifting mechanism

33:加熱器 33: heater

45:基座部 45: Base

61:X軸滑塊 61: X-axis slider

62:導軌 62: Rail

63:可動部 63: movable part

E1:保持區域 E1: hold area

Rp:加壓區域 Rp: pressurized area

W:基板 W: substrate

Claims (6)

一種安裝裝置，其特徵在於：其係將經由熱固性接著劑而暫時固定於基板上之半導體晶片進行熱壓接合者，且具備： 外緣保持部，其保持上述基板之外緣； 接合頭，其具有將包含上述半導體晶片之區域作為加壓區域而進行按壓之按壓面； 接合台，其自上述基板之背面支持上述加壓區域；及 周邊保持部，其將上述基板之較外緣更靠內側且為上述加壓區域之外側，自該基板之背面側予以吸附保持。A mounting device, characterized in that it is used for thermocompression bonding of a semiconductor wafer temporarily fixed on a substrate via a thermosetting adhesive, and is provided with: An outer edge holding portion, which holds the outer edge of the substrate; A bonding head having a pressing surface for pressing the area containing the above-mentioned semiconductor wafer as a pressing area; A bonding station, which supports the pressure area from the back of the substrate; and The peripheral holding part sucks and holds the substrate on the inner side of the outer edge and outside the pressurized region from the back side of the substrate. 如請求項1之安裝裝置，其具備加壓位置變更部，該加壓位置變更部使上述外緣保持部相對於上述接合頭、上述接合台及上述周邊保持部進行相對移動，而依序變更上述加壓區域，且 將依序變更成為熱壓接合對象之上述半導體晶片之上述加壓區域時所產生之上述外緣保持部之可動干涉區域，設定在較上述周邊保持部更靠外側。Such as the mounting device of claim 1, which includes a pressurizing position changing portion that allows the outer edge holding portion to move relative to the bonding head, the bonding table, and the peripheral holding portion to sequentially change The above pressurized area, and The movable interference area of the outer edge holding portion that is generated when the pressure area of the semiconductor wafer to be thermocompression bonded is sequentially changed is set to be more outside than the peripheral holding portion. 如請求項2之安裝裝置，其中上述外緣保持部具備保持姿勢切換部，該保持姿勢切換部切換保持上述基板之外緣中預先設定之第1保持區域之第1保持姿勢、與保持預先設定之第2保持區域之第2保持姿勢， 將以上述第1保持姿勢依序變更上述加壓區域時所產生之上述外緣保持部之可動干涉區域，設定在較上述周邊保持部更靠外側，且 將以上述第2保持姿勢依序變更上述加壓區域時所產生之上述外緣保持部之可動干涉區域，設定在較上述周邊保持部更靠外側。Such as the mounting device of claim 2, wherein the outer edge holding portion is provided with a holding posture switching portion that switches between holding the first holding posture of the first holding area preset in the outer edge of the substrate and holding the preset The second holding position of the second holding area, Set the movable interference area of the outer edge holding portion that is generated when the pressure area is sequentially changed in the first holding posture to be more outside than the peripheral holding portion, and The movable interference area of the outer edge holding portion that is generated when the pressure area is sequentially changed in the second holding posture is set to be more outside than the peripheral holding portion. 如請求項1至3中任一項之安裝裝置，其中上述周邊保持部具備藉由負壓而自背面吸引上述基板之吸引構件。The mounting device according to any one of claims 1 to 3, wherein the peripheral holding portion is provided with a suction member that sucks the substrate from the back surface by a negative pressure. 如請求項1至4中任一項之安裝裝置，其中上述周邊保持部具備冷卻至低於環境溫度的溫度之冷卻構件。The mounting device according to any one of claims 1 to 4, wherein the peripheral holding portion is provided with a cooling member that is cooled to a temperature lower than the ambient temperature. 一種安裝方法，其特徵在於：其係將經由熱固性接著劑而暫時固定於基板上之半導體晶片進行熱壓接合者，且 以外緣保持構件保持設定於上述基板之外緣之基板保持區域，並且依序變更要進行上述熱壓接合之區域，將半導體晶片進行熱壓接合時， 將要進行上述熱壓接合之區域自上述基板之背面支持於平面上， 僅加壓並加熱上述要進行熱壓接合之區域之半導體晶片，另一方面， 以周邊保持構件自上述基板之背面吸附保持要進行上述熱壓接合之區域之周邊。A mounting method, characterized in that it is a method of thermocompression bonding a semiconductor wafer temporarily fixed on a substrate via a thermosetting adhesive, and When the outer edge holding member holds the substrate holding area set at the outer edge of the substrate, and sequentially changes the area to be subjected to the thermal compression bonding, when the semiconductor wafer is thermally compressed The area to be subjected to the above-mentioned thermal compression bonding is supported on a plane from the back surface of the above-mentioned substrate, Only press and heat the semiconductor wafer in the above-mentioned area to be thermocompression bonded, on the other hand, The periphery of the region to be subjected to the thermocompression bonding is sucked and held from the back surface of the substrate by a peripheral holding member.

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