TW202023327A - Plasma processing apparatus, monitoring method, and monitoring program - Google Patents
Plasma processing apparatus, monitoring method, and monitoring program Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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Abstract
Description
本發明係關於一種電漿處理裝置、監視方法及監視程式。The invention relates to a plasma processing device, a monitoring method and a monitoring program.
於專利文獻1中提出有如下技術,即,求出自高頻電源經由匹配器供給至處理室之高頻電力之匹配器中之輸入電力之值與電力設定值之差,以匹配器之輸入電力之值成為電力設定值之方式控制高頻電源之輸出電力。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2008-251462號公報[Patent Document 1] Japanese Patent Laid-Open No. 2008-251462
[發明所欲解決之問題][Problems to be solved by the invention]
本發明係提供一種不配置感測器便可檢測異常之產生之技術。 [解決問題之技術手段]The present invention provides a technology that can detect the occurrence of abnormalities without disposing a sensor. [Technical means to solve the problem]
本發明之一態樣之電漿處理裝置具有:記憶部、獲取部、及監視部。記憶部記憶表示對載置於載置台之被處理體之電漿處理之處理條件變化之情形時之有關載置台之溫度之值之變化之變化資訊。獲取部以特定之週期獲取有關載置台之溫度之值。監視部基於變化資訊,根據由獲取部獲取之有關載置台之溫度之值之變化,監視電漿處理之處理條件之變化。 [發明之效果]A plasma processing device of one aspect of the present invention has a memory unit, an acquisition unit, and a monitoring unit. The memory unit stores the change information about the change in the value of the temperature of the mounting table when the processing conditions of the plasma processing of the object placed on the mounting table change. The acquiring part acquires the value of the temperature of the mounting table in a specific cycle. Based on the change information, the monitoring unit monitors the changes in the processing conditions of the plasma processing based on the changes in the value of the temperature of the mounting table acquired by the acquisition unit. [Effect of invention]
根據本發明,不配置感測器便可檢測異常之產生。According to the present invention, the occurrence of an abnormality can be detected without disposing a sensor.
以下,參照圖式,對本案揭示之電漿處理裝置、監視方法及監視程式之實施形態詳細地進行說明。於本發明中,作為電漿處理裝置之具體例,列舉進行電漿蝕刻之裝置為例詳細地進行說明。再者,所揭示之電漿處理裝置、監視方法及監視程式不被本實施形態限定。Hereinafter, with reference to the drawings, embodiments of the plasma processing device, monitoring method, and monitoring program disclosed in this application will be described in detail. In the present invention, as a specific example of a plasma processing apparatus, an example of an apparatus that performs plasma etching will be described in detail. Furthermore, the disclosed plasma processing device, monitoring method, and monitoring program are not limited by this embodiment.
且說,例如,電漿處理裝置中存在如下者,即,於處理容器內配置各種探針或各種電性感測器等感測器,利用感測器檢測電漿之狀態,根據電漿之狀態之變化檢測異常之產生。然而,電漿處理裝置若於處理容器內配置感測器,則製造成本上升。又,電漿處理裝置若於處理容器內配置感測器,則感測器成為特異點,於特異點之周圍,電漿處理之均一性降低。因此,於電漿處理裝置中,期待不配置感測器而檢測異常之產生。In addition, for example, plasma processing apparatuses include the following. That is, sensors such as various probes or various electro-sensors are arranged in the processing container, and the sensors are used to detect the state of plasma. The occurrence of abnormal change detection. However, in the plasma processing apparatus, if the sensor is arranged in the processing container, the manufacturing cost increases. In addition, if the plasma processing device is equipped with a sensor in the processing container, the sensor becomes a peculiar point, and the uniformity of plasma processing decreases around the peculiar point. Therefore, in the plasma processing device, it is expected that no sensor is provided to detect the occurrence of abnormality.
[電漿處理裝置之構成]
首先,對實施形態之電漿處理裝置10之構成進行說明。圖1係概略性地表示實施形態之電漿處理裝置之圖。於圖1中概略性地示出實施形態之電漿處理裝置10之縱剖面中之構造。圖1所示之電漿處理裝置10係電容耦合型平行板電漿蝕刻裝置。電漿處理裝置10具備大致圓筒狀之處理容器12。處理容器12例如包含鋁。又,處理容器12之正面被實施陽極氧化處理。[Constitution of Plasma Processing Device]
First, the configuration of the
於處理容器12內設置有載置台16。載置台16具有靜電吸盤18及基台20。靜電吸盤18之上表面設為載置成為電漿處理之對象之被處理體之載置面。於本實施形態中,將晶圓W作為被處理體載置於靜電吸盤18之上表面。基台20具有大致圓盤形狀,且主部包含例如鋁之類導電性之金屬。基台20構成下部電極。基台20由支持部14支持。支持部14係自處理容器12之底部延伸之圓筒狀之構件。A mounting table 16 is provided in the
於基台20經由匹配器MU1電性連接有第1高頻電源HFS。第1高頻電源HFS係產生電漿產生用高頻電力之電源,產生27~100 MHz之頻率、於一例中為40 MHz之高頻電力。藉此,於基台20正上方產生電漿。匹配器MU1具有用以使第1高頻電源HFS之輸出阻抗與負載側(基台20側)之輸入阻抗匹配之電路。The
又,於基台20,經由匹配器MU2電性連接有第2高頻電源LFS。第2高頻電源LFS產生用以將離子吸入至晶圓W之高頻電力(高頻偏壓電力),並將該高頻偏壓電力供給至基台20。藉此,於基台20產生偏壓電位。高頻偏壓電力之頻率為400 kHz~13.56 MHz之範圍內之頻率,於一例中,為3 MHz。匹配器MU2具有用以使第2高頻電源LFS之輸出阻抗與負載側(基台20側)之輸入阻抗匹配之電路。Furthermore, a second high frequency power supply LFS is electrically connected to the
於基台20上設置有靜電吸盤18。靜電吸盤18藉由庫倫力等靜電力而吸附晶圓W,並保持該晶圓W。靜電吸盤18於陶瓷製之本體部內設置有靜電吸附用之電極E1。於電極E1經由開關SW1電性連接有直流電源22。保持晶圓W之吸附力依存於自直流電源22施加之直流電壓之值。An
又,於靜電吸盤18上之晶圓W之周圍配置聚焦環FR。聚焦環FR係為了提昇電漿處理之均一性而設置。聚焦環FR包含根據應執行之電漿處理適當選擇之材料。例如,聚焦環FR包含矽或石英。In addition, a focus ring FR is arranged around the wafer W on the
於基台20之內部形成有冷媒流路24。對冷媒流路24,自設置於處理容器12之外部之冷卻器單元經由配管26a供給冷媒。供給至冷媒流路24之冷媒經由配管26b返回冷卻器單元。A
於處理容器12內設置有上部電極30。上部電極30於載置台16之上方,與基台20對向配置。基台20與上部電極30相互大致平行地設置。An
上部電極30介隔絕緣性屏蔽構件32支持於處理容器12之上部。上部電極30具有電極板34及電極支持體36。電極板34面向處理空間S,且形成有複數個氣體噴出孔34a。電極板34包含焦耳熱較少之低電阻之導電體或半導體。上部電極30設為能夠進行溫度之控制。例如,上部電極30設置未圖示之加熱器等調溫機構,能夠進行溫度之控制。The
電極支持體36裝卸自如地支持電極板34。電極支持體36包含例如鋁之類導電性材料。於電極支持體36之內部設置有氣體擴散室36a。於電極支持體36中,與氣體噴出孔34a連通之複數個氣流通孔36b自氣體擴散室36a向下方延伸。又,於電極支持體36形成有對氣體擴散室36a導入處理氣體之氣體導入口36c。於氣體導入口36c連接有氣體供給管38。The
於氣體供給管38經由閥群42及流量控制器群44連接有氣源群40。閥群42具有複數個開閉閥。流量控制器群44具有質量流量控制器之類複數個流量控制器。又,氣源群40具有電漿處理所需之複數種氣體用之氣源。氣源群40之複數個氣源經由對應之開閉閥及對應之質量流量控制器連接於氣體供給管38。A
於電漿處理裝置10中,來自氣源群40之複數個氣源中選擇之一個以上之氣源之一個以上之氣體供給至氣體供給管38。供給至氣體供給管38之氣體到達至氣體擴散室36a,經由氣流通孔36b及氣體噴出孔34a噴出至處理空間S。In the
又,如圖1所示,電漿處理裝置10更具有接地導體12a。
接地導體12a係大致圓筒狀之接地導體,以自處理容器12之側壁延伸至較上部電極30之高度位置更靠上方之方式設置。Moreover, as shown in FIG. 1, the
又,於電漿處理裝置10中,沿著處理容器12之內壁裝卸自如地設置有積存物遮罩46。又,積存物遮罩46亦設置於支持部14之外周。積存物遮罩46係防止蝕刻副產物(積存物)附著於處理容器12者,藉由於鋁材上被覆Y2O3等陶瓷而構成。積存物遮罩46設為能夠進行溫度之控制。例如,積存物遮罩46設置未圖示之加熱器等調溫機構,能夠進行溫度之控制。In addition, in the
於處理容器12之底部側,於支持部14與處理容器12之內壁之間設置有排氣板48。排氣板48係例如藉由於鋁材被覆Y2O3等陶瓷而構成。處理容器12係於排氣板48之下方設置有排氣口12e。於排氣口12e經由排氣管52連接有排氣裝置50。排氣裝置50具有渦輪分子泵等真空泵。排氣裝置50於實施電漿處理時,將處理容器12內減壓至所需之真空度。又,於處理容器12之側壁設置有晶圓W之搬入搬出口12g。搬入搬出口12g能夠藉由閘閥54而開閉。On the bottom side of the
如上所述構成之電漿處理裝置10係由控制部100綜合地控制其動作。控制部100係例如電腦,且控制電漿處理裝置10之各部。電漿處理裝置10由控制部100綜合地控制動作。In the
[載置台之構成]
其次,對載置台16詳細地進行說明。圖2係表示實施形態之載置台之俯視圖。如上所述,載置台16具有靜電吸盤18及基台20。靜電吸盤18由陶瓷形成,且上表面設為載置晶圓W及聚焦環FR之載置區域18a。載置區域18a於俯視下設為大致圓形之區域。如圖1所示,靜電吸盤18於配置晶圓W之區域設置有靜電吸附用之電極E1。電極E1經由開關SW1連接於直流電源22。[Composition of the mounting table]
Next, the mounting table 16 will be described in detail. Fig. 2 is a plan view showing the mounting table of the embodiment. As described above, the mounting table 16 has the
又,如圖1所示,於載置區域18a內且電極E1之下方設置有複數個加熱器HT。載置區域18a分割為複數個分割區域75,於各個分割區域75設置有加熱器HT。例如,載置區域18a如圖2所示分割為中央之圓狀之分割區域75a(中央部)及3個環狀之分割區域75b~75d(中間部、邊緣部、聚焦環部)。於分割區域75a~75d分別設置有加熱器HT。於分割區域75a~75c配置晶圓W。於分割區域75d配置聚焦環FR。於本實施形態中,以將載置台16之面內分為4個分割區域75a~75d進行溫度控制之情形為例進行說明,但分割區域75之個數不限於4個,可為2個或3個,亦可為5個以上。In addition, as shown in FIG. 1, a plurality of heaters HT are provided in the
加熱器HT經由未圖示之配線而個別地連接於圖1所示之加熱器電源HP。加熱器電源HP自控制部100,基於控制對各加熱器HT供給經個別調整之電力。藉此,個別地控制各加熱器HT發出之熱,從而個別地調整載置區域18a內之複數個分割區域之溫度。The heaters HT are individually connected to the heater power supply HP shown in FIG. 1 via wiring not shown. The heater power source HP is supplied from the
於加熱器電源HP設置有檢測對各加熱器HT供給之供給電力之電力檢測部PD。再者,電力檢測部PD亦可不同於加熱器電源HP而設置於電力自加熱器電源HP向各加熱器HT流動之配線。電力檢測部PD檢測對各加熱器HT供給之供給電力。例如,電力檢測部PD檢測電力量[W]作為對各加熱器HT供給之供給電力。加熱器HT根據電力量發熱。因此,對加熱器HT供給之電力量表示加熱功率。電力檢測部PD將檢測所得之表示對各加熱器HT之供給電力之電力資料通知給控制部100。The heater power supply HP is provided with a power detection unit PD that detects the power supplied to each heater HT. Furthermore, the electric power detection part PD may be different from the heater power supply HP, and may be provided in the wiring which electric power flows from the heater power supply HP to each heater HT. The power detection unit PD detects the power supplied to each heater HT. For example, the power detection unit PD detects the amount of power [W] as the supply power to each heater HT. The heater HT generates heat according to the amount of electric power. Therefore, the amount of electric power supplied to the heater HT represents the heating power. The power detection unit PD notifies the
又,載置台16於載置區域18a之各分割區域75分別設置有能夠檢測加熱器HT之溫度之未圖示之溫度感測器。溫度感測器亦可為與加熱器HT分開而測定溫度之元件。又,溫度感測器亦可為配置於對於加熱器HT之電力流動之配線,利用電阻根據溫度上升而增大之性質,檢測溫度之元件。由各溫度感測器檢測所得之感測值發送至溫度測定器TD。溫度測定器TD根據各感測值測定載置區域18a之各分割區域75之溫度。溫度測定器TD將表示載置區域18a之各分割區域75之溫度之溫度資料通知給控制部100。In addition, the mounting table 16 is respectively provided with a temperature sensor (not shown) capable of detecting the temperature of the heater HT in each divided
進而,亦可藉由未圖示之傳熱氣體供給機構及氣體供給管線將傳熱氣體、例如氦氣供給至靜電吸盤18之上表面與晶圓W之背面之間。Furthermore, a heat transfer gas, such as helium gas, may be supplied between the upper surface of the
[控制部之構成]
繼而,對控制部100詳細地進行說明。圖3係表示控制實施形態之電漿處理裝置之控制部之概略構成之方塊圖。控制部100設置有外部介面101、程序控制器102、使用者介面103、及記憶部104。[Composition of Control Department]
Next, the
外部介面101設為能夠與電漿處理裝置10之各部進行通信,且被輸入輸出各種資料。例如,自電力檢測部PD將表示對於各加熱器HT之供給電力之電力資料輸入至外部介面101。又,自溫度測定器TD將表示載置區域18a之各分割區域75之溫度之溫度資料輸入至外部介面101。又,外部介面101將控制對各加熱器HT供給之供給電力之控制資料向加熱器電源HP輸出。The
程序控制器102具備CPU(Central Processing Unit,中央處理單元),控制電漿處理裝置10之各部。The
使用者介面103包含工程管理者為管理電漿處理裝置10而進行指令之輸入操作之鍵盤或將電漿處理裝置10之運轉情況可視化地顯示之顯示器等。The user interface 103 includes a keyboard for the project manager to input instructions for managing the
於記憶部104儲存有用以藉由程序控制器102之控制而實現由電漿處理裝置10執行之各種處理之控制程式(軟體)或記憶有處理條件資料等之配方。又,於記憶部104儲存有與進行電漿處理方面之裝置或程序相關之參數等。再者,控制程式或配方、參數亦可記憶於電腦可讀取之電腦記錄媒體(例如硬碟、DVD等光碟、軟碟、半導體記憶體等)。又,控制程式或配方、參數亦可記憶於其他裝置,且例如經由專用線路線上讀出進行利用。The storage unit 104 stores a control program (software) for various processing executed by the
程序控制器102具有用以儲存程式或資料之內部記憶體,讀出記憶於記憶部104之控制程式,執行所讀出之控制程式之處理。程序控制器102藉由控制程式進行動作而作為各種處理部發揮功能。例如,程序控制器102具有加熱器控制部102a、第1獲取部102b、第2獲取部102c、設定溫度運算部102d、監視部102e、警報部102f、及修正部102g之功能。再者,於本實施形態中,以程序控制器102作為各種處理部發揮功能之情形為例進行說明,但不限於此。例如,亦可利用複數個控制器分散地實現加熱器控制部102a、第1獲取部102b、第2獲取部102c、設定溫度運算部102d、監視部102e、警報部102f、及修正部102g之功能。The
然而,於電漿處理中,處理之進行因晶圓W之溫度而變化。例如,於電漿蝕刻中,蝕刻之進行速度因晶圓W之溫度而變化。因此,於電漿處理裝置10中,考慮藉由各加熱器HT而將晶圓W之溫度控制為目標溫度。However, in plasma processing, the progress of the processing varies with the temperature of the wafer W. For example, in plasma etching, the etching speed varies with the temperature of the wafer W. Therefore, in the
然而,於電漿處理中,自電漿朝向晶圓W存在熱輸入。因此,存在電漿處理裝置10無法將電漿處理中之晶圓W之溫度高精度地控制為目標溫度之情形。However, in plasma processing, there is heat input from the plasma toward the wafer W. Therefore, there are cases where the
對於對晶圓W之溫度造成影響之能量之流動進行說明。圖4係模式性地表示對晶圓之溫度造成影響之能量之流動之圖。於圖4中,將包含晶圓W及靜電吸盤(ESC)18之載置台16簡化表示。圖4之例係示出於靜電吸盤18之載置區域18a之1個分割區域75中對晶圓W之溫度造成影響之能量之流動。載置台16具有靜電吸盤18及基台20。靜電吸盤18與基台20藉由接著層19而接著。於靜電吸盤18之載置區域18a之內部設置有加熱器HT。於基台20之內部形成有冷媒流動之冷媒流路24。The flow of energy that affects the temperature of the wafer W will be described. Fig. 4 is a diagram schematically showing the flow of energy that affects the temperature of the wafer. In FIG. 4, the mounting table 16 including the wafer W and the electrostatic chuck (ESC) 18 is simplified. The example of FIG. 4 shows the flow of energy that affects the temperature of the wafer W in one
加熱器HT根據自加熱器電源HP供給之供給電力而發熱,溫度上升。於圖4中,將對加熱器HT供給之供給電力表示為加熱功率Ph
。於加熱器HT中,產生加熱功率Ph
除以靜電吸盤18之設置有加熱器HT之區域之面積A所得之每一單位面積之發熱量(熱通量)qh
。The heater HT generates heat based on the power supplied from the heater power source HP, and the temperature rises. In FIG. 4, the supply power supplied to the heater HT is represented as heating power Ph . In the heater HT, the generated heating power P h is divided by the area A of the area where the heater HT of the
於電漿處理裝置10中,上部電極30或積存物遮罩46等處理容器12之內部部分之溫度控制之情形時,自內部部分產生輻射熱。例如,於為了抑制積存物之附著而將上部電極30或積存物遮罩46之溫度控制為高溫之情形時,輻射熱自上部電極30或積存物遮罩46熱輸入至晶圓W。於圖4中,以自上部電極30或積存物遮罩46向晶圓W之輻射熱qr
示出。In the
又,於進行電漿處理之情形時,晶圓W自電漿進行熱輸入。於圖4中,以自電漿向晶圓W之熱輸入量除以晶圓W之面積所得之每一單位面積之來自電漿之熱通量qp 示出。晶圓W藉由來自電漿之熱通量qp 之熱輸入或輻射熱qr 之熱輸入而溫度上升。Moreover, in the case of plasma processing, the wafer W receives heat from the plasma. In FIG. 4, in a self-plasma per unit area by dividing the area obtained from the wafer W from the plasma heat flux q p shows the heat input to the wafer W. The temperature of the wafer W is increased by the heat input of the heat flux q p from the plasma or the heat input of the radiant heat q r .
輻射熱之熱輸入與處理容器12之內部部分之溫度成正比。例如,輻射熱之熱輸入與上部電極30或積存物遮罩46之溫度成正比。已知來自電漿之熱輸入主要與對晶圓W照射之電漿中之離子之量與用以將電漿中之離子吸入至晶圓W之偏壓電位之積成正比。對晶圓W照射之電漿中之離子之量與電漿之電子密度成正比。電漿之電子密度與電漿之產生中施加之來自第1高頻電源HFS之高頻電力HFS之功率成正比。又,電漿之電子密度依存於處理容器12內之壓力。用以將電漿中之離子吸入至晶圓W之偏壓電位與偏壓電位之產生中施加之來自第2高頻電源LFS之高頻電力LFS之功率成正比。又,用以將電漿中之離子吸入至晶圓W之偏壓電位依存於處理容器12內之壓力。再者,於未將高頻電力LFS施加至載置台16之情形時,藉由電漿產生時所產生之電漿之電位(電漿電位)與載置台16之電位差,而將離子吸入至載置台。The heat input of the radiant heat is proportional to the temperature of the inner part of the
又,來自電漿之熱輸入包含電漿之發光產生之加熱或電漿中之電子或自由基產生之對晶圓W之照射、離子及自由基產生之晶圓W上之表面反應等。該等成分亦依存於高頻電源之功率或處理容器12內之壓力。來自電漿之熱輸入另外依存於與電漿產生相關之裝置參數、例如載置台16與上部電極30之間隔距離或供給至處理空間S之氣體種類。In addition, the heat input from the plasma includes heating generated by the luminescence of the plasma, irradiation of the wafer W generated by electrons or radicals in the plasma, and surface reaction on the wafer W generated by ions and free radicals. These components also depend on the power of the high-frequency power source or the pressure in the
傳遞至晶圓W之熱傳遞至靜電吸盤18。此處,晶圓W之熱並非全部傳遞至靜電吸盤18,而是根據晶圓W與靜電吸盤18之接觸程度等熱之傳遞難度,熱傳遞至靜電吸盤18。熱之傳遞難度即熱阻與對於熱之傳熱方向之截面面積成反比。因此,於圖4中,將熱自晶圓W向靜電吸盤18之正面之傳遞難度以晶圓W與靜電吸盤18之正面間之每一單位面積之熱阻Rth
・A示出。再者,A係設置有加熱器HT之區域(分割區域75)之面積。Rth
係設置有加熱器HT之區域整體中之熱阻。又,於圖4中,將自晶圓W向靜電吸盤18正面之熱輸入量以自晶圓W向靜電吸盤18正面之每一單位面積之熱通量q示出。再者,熱阻Rth
・A依存於靜電吸盤18之正面狀態、於晶圓W之保持下自直流電源22施加之直流電壓之值、及供給至靜電吸盤18之上表面與晶圓W之背面之間之傳熱氣體之壓力。又,熱阻Rth
・A除此以外亦依存於與熱阻或熱傳導率相關之裝置參數。The heat transferred to the wafer W is transferred to the
傳遞至靜電吸盤18之正面之熱使靜電吸盤18之溫度上升,進而,傳遞至加熱器HT。於圖4中,將自靜電吸盤18正面向加熱器HT之熱輸入量以自靜電吸盤18正面向加熱器HT之每一單位面積之熱通量qc
示出。The heat transferred to the front surface of the
另一方面,基台20藉由冷媒流路24中流動之冷媒而冷卻,且將接觸之靜電吸盤18冷卻。此時,於圖4中,將通過接著層19自靜電吸盤18之背面向基台20之熱移除量以自靜電吸盤18之背面向基台20之每一單位面積之熱通量qsus
示出。藉此,加熱器HT藉由熱移除而冷卻,溫度降低。On the other hand, the
於以加熱器HT之溫度成為固定之方式進行控制之情形時,於加熱器HT之位置成為熱輸入至加熱器HT之熱量及由加熱器HT產生之發熱量之總和等於自加熱器HT熱移除之熱移除量之狀態。例如,於未將電漿點火之未點火狀態下,成為輻射熱qr
之熱量及由加熱器HT產生之發熱量之總和等於自加熱器HT熱移除之熱移除量之狀態。圖5A係模式性地表示未點火狀態之能量之流動之圖。於圖5A之例中,自基台20藉由冷卻而自加熱器HT將「100」之熱量進行熱移除。藉由輻射熱,「1」熱量傳遞至晶圓W。於晶圓W或靜電吸盤18之溫度大致固定地穩定之狀態之情形時,傳遞至晶圓W之熱直接傳遞至靜電吸盤18。熱輸入至晶圓W之「1」熱量經由靜電吸盤18,熱輸入至加熱器HT。於以加熱器HT之溫度成為固定之方式進行控制之情形時,加熱器HT中,自加熱器電源HP藉由加熱功率Ph
而產生「99」之熱量。When the temperature of the heater HT is fixed, the position of the heater HT becomes the sum of the heat input to the heater HT and the heat generated by the heater HT equal to the heat transfer from the heater HT The status of the heat removal amount. For example, in the unignited state where the plasma is not ignited, the sum of the heat of radiant heat q r and the heat generated by the heater HT is equal to the amount of heat removed from the heater HT. Fig. 5A is a diagram schematically showing the flow of energy in the unfired state. In the example of FIG. 5A, the heat of "100" is thermally removed from the heater HT from the base 20 by cooling. By radiant heat, "1" heat is transferred to the wafer W. When the temperature of the wafer W or the
另一方面,例如,於將電漿點火之點火狀態下,亦自電漿經由靜電吸盤18對加熱器HT進行熱輸入。圖5B係模式性地表示點火狀態之能量之流動之圖。此處,於點火狀態中存在過度狀態及恆定狀態。過度狀態係例如對晶圓W或靜電吸盤18之熱輸入量多於熱移除量,且晶圓W或靜電吸盤18之溫度經時地成為上升傾向之狀態。恆定狀態係晶圓W或靜電吸盤18之熱輸入量與熱移除量相等,且晶圓W或靜電吸盤18之溫度無經時性上升傾向,溫度成為大致固定之狀態。On the other hand, for example, in the ignition state where the plasma is ignited, heat is also input from the plasma to the heater HT via the
於圖5B之例中,亦自基台20藉由冷卻,而自加熱器HT熱移除「100」之熱量。於點火狀態之情形時,晶圓W藉由來自電漿之熱輸入而溫度上升,直至成為恆定狀態為止。自晶圓W經由靜電吸盤18將熱傳遞至加熱器HT。如上所述,於以加熱器HT之溫度成為固定之方式進行控制之情形時,熱輸入至加熱器HT之熱量與自加熱器HT熱移除之熱量成為相等之狀態。加熱器HT係加熱器HT之溫度維持固定所需之熱量下降。因此,對加熱器HT之供給電力下降。In the example of FIG. 5B, the heat of "100" is also removed from the heater HT by cooling from the
例如,於圖5B中,於設為「過度狀態」之例中,「80」之熱量自電漿向晶圓W傳遞。又,藉由輻射熱而對晶圓W傳遞「1」熱量。傳遞至晶圓W之熱傳遞至靜電吸盤18。又,於晶圓W之溫度非恆定狀態之情形時,傳遞至晶圓W之熱係一部分對晶圓W之溫度上升發揮作用。對晶圓W之溫度上升發揮作用之熱量依存於晶圓W之熱容量。因此,傳遞至晶圓W之「81」之熱量中之「61」之熱量自晶圓W向靜電吸盤18之正面傳遞。傳遞至靜電吸盤18之正面之熱傳遞至加熱器HT。又,於靜電吸盤18之溫度非恆定狀態之情形時,傳遞至靜電吸盤18之正面之熱係一部分對靜電吸盤18之溫度上升發揮作用。對靜電吸盤18之溫度上升發揮作用之熱量依存於靜電吸盤18之熱容量。因此,傳遞至靜電吸盤18之正面之「61」之熱量中之「41」之熱量傳遞至加熱器HT。因此,於以加熱器HT之溫度成為固定之方式進行控制之情形時,自加熱器電源HP藉由加熱功率Ph
而將「59」之熱量供給至加熱器HT。For example, in FIG. 5B, in the example set as the "over state", the heat of "80" is transferred from the plasma to the wafer W. In addition, “1” heat is transferred to the wafer W by radiant heat. The heat transferred to the wafer W is transferred to the
再者,於圖5B中,於設為「恆定狀態」之例中,「80」之熱量自電漿向晶圓W傳遞。又,藉由輻射熱而對晶圓W傳遞「1」熱量。傳遞至晶圓W之熱傳遞至靜電吸盤18。又,於晶圓W之溫度為恆定狀態之情形時,晶圓W成為熱輸入量與熱輸出量相等之狀態。因此,自電漿傳遞至晶圓W之「81」之熱量自晶圓W向靜電吸盤18之正面傳遞。傳遞至靜電吸盤18之正面之熱傳遞至加熱器HT。於靜電吸盤18之溫度為恆定狀態之情形時,靜電吸盤18係熱輸入量與熱輸出量相等。因此,傳遞至靜電吸盤18之正面之「81」之熱量傳遞至加熱器HT。因此,於以加熱器HT之溫度成為固定之方式進行控制之情形時,自加熱器電源HP藉由加熱功率Ph
而對加熱器HT供給「19」之熱量。Furthermore, in FIG. 5B, in the example set as the "constant state", the heat of "80" is transferred from the plasma to the wafer W. In addition, “1” heat is transferred to the wafer W by radiant heat. The heat transferred to the wafer W is transferred to the
如圖5A及圖5B所示,對加熱器HT之供給電力係較未點火狀態,點火狀態更低。又,於點火狀態下,對加熱器HT之供給電力下降直至變為恆定狀態為止。As shown in FIG. 5A and FIG. 5B, the power supply system to the heater HT is lower than the unignited state and the ignition state is lower. In addition, in the ignition state, the power supply to the heater HT decreases until it becomes a constant state.
再者,如圖5A及圖5B所示,於以加熱器HT之溫度成為固定之方式進行控制之情形時,無論「未點火狀態」、「過度狀態」、「恆定狀態」之任一狀態,均自基台20藉由冷卻而自加熱器HT熱移除「100」之熱量。即,自加熱器HT朝向供給至形成於基台20之內部之冷媒流路24之冷媒之每一單位面積之熱通量qsus
成為始終固定,自加熱器HT至冷媒之溫度梯度亦始終固定。因此,用於以加熱器HT之溫度成為固定之方式進行控制之溫度感測器無需直接安裝於加熱器HT。例如,若為靜電吸盤18之背面、接著層19之中、基台20之內部等加熱器HT與冷媒之間,則加熱器HT與溫度感測器間之溫度差亦始終固定,可藉由使用存在於加熱器HT與溫度感測器之間之材質所具有之熱傳導率、熱阻等,運算溫度感測器與加熱器HT之間之溫度差(ΔT),將由溫度感測器檢測所得之溫度之值加上溫度差(ΔT),而作為加熱器HT之溫度輸出,從而能夠以實際之加熱器HT之溫度成為固定之方式進行控制。Furthermore, as shown in Fig. 5A and Fig. 5B, when the temperature of the heater HT is controlled in such a way that the temperature of the heater HT is fixed, regardless of any of the "unignited state", "over state", and "constant state", All of them remove "100" of heat from the heater HT by cooling from the
圖6係表示晶圓之溫度及對加熱器之供給電力之變化之一例之圖。圖6(A)表示晶圓W之溫度之變化。圖6(B)表示對加熱器HT之供給電力之變化。圖6之例表示以加熱器HT之溫度成為固定之方式進行控制,自未將電漿點火之未點火狀態將電漿點火,測定晶圓W之溫度及對加熱器HT之供給電力所得之結果之一例。晶圓W之溫度係使用KLA-Tencor公司出售之Etch Temp等溫度計測用晶圓進行計測。該溫度計測用晶圓係價格較高。因此,於量產現場,若於電漿處理裝置10之各加熱器HT之溫度之調整中使用溫度計測用晶圓,則成本增高。又,於量產現場,若於電漿處理裝置10之各加熱器HT之溫度調整中使用溫度計測用晶圓,則生產性降低。Fig. 6 is a diagram showing an example of changes in the temperature of the wafer and the power supply to the heater. FIG. 6(A) shows the change in the temperature of the wafer W. Fig. 6(B) shows the change of the power supply to the heater HT. The example in Fig. 6 shows the result of controlling the temperature of the heater HT to be fixed, igniting the plasma from the unignited state without igniting the plasma, and measuring the temperature of the wafer W and the power supplied to the heater HT An example. The temperature of the wafer W is measured using a temperature measurement wafer such as Etch Temp sold by KLA-Tencor. The wafer system for thermometer measurement is relatively expensive. Therefore, at the mass production site, if the temperature measurement wafer is used in the adjustment of the temperature of each heater HT of the
圖6之期間T1係未將電漿點火之未點火狀態。於期間T1,對加熱器HT之供給電力成為固定。圖6之期間T2係將電漿點火之點火狀態,且為過渡狀態。於期間T2,對加熱器HT之供給電力降低。又,於期間T2,晶圓W之溫度上升至固定之溫度。圖6之期間T3係將電漿點火之點火狀態。於期間T3,晶圓W之溫度固定,成為恆定狀態。若靜電吸盤18亦變為恆定狀態,則對加熱器HT之供給電力大致固定,降低之傾向之變動穩定。圖6之期間T4係將電漿熄滅之未點火狀態。於期間T4,不再自電漿對晶圓W進行熱輸入,因此,晶圓W之溫度降低,對加熱器HT之供給電力增加。The period T1 in Fig. 6 is the unignited state in which the plasma is not ignited. During the period T1, the power supply to the heater HT becomes constant. The period T2 in Fig. 6 is the ignition state in which the plasma is ignited, and is the transition state. During the period T2, the power supply to the heater HT decreases. In addition, during the period T2, the temperature of the wafer W rises to a fixed temperature. The period T3 in Fig. 6 is the ignition state when the plasma is ignited. During the period T3, the temperature of the wafer W is fixed and becomes a constant state. If the
圖6之期間T2所示之過度狀態下之對加熱器HT之供給電力降低之傾向係因自電漿向晶圓W之熱輸入量、或晶圓W與靜電吸盤18之正面間之熱阻等而變化。The tendency of the power supply to the heater HT in the excessive state shown in the period T2 of FIG. 6 to decrease is due to the amount of heat input from the plasma to the wafer W, or the thermal resistance between the wafer W and the front surface of the
圖7係模式性地表示點火狀態之能量之流動之圖。再者,圖7均為過度狀態之例。又,輻射熱之熱輸入因影響較小而省略。例如,於圖7中設為「熱輸入量:小、熱阻:小」之例中,「80」之熱量自電漿向晶圓W傳遞。自電漿傳遞至晶圓W之「80」之熱量中之「60」之熱量自晶圓W向靜電吸盤18之正面傳遞。繼之,傳遞至靜電吸盤18之正面之「60」之熱量中之「40」之熱量傳遞至加熱器HT。例如,於以加熱器HT之溫度成為固定之方式進行控制之情形時,自加熱器電源HP藉由加熱功率Ph
對加熱器HT供給「60」之熱量。Fig. 7 is a diagram schematically showing the flow of energy in the ignition state. In addition, Fig. 7 is an example of an excessive state. In addition, the heat input of radiant heat is omitted due to its small influence. For example, in the example set as "heat input: small, thermal resistance: small" in FIG. 7, the heat of "80" is transferred from the plasma to the wafer W. The heat of “60” of the heat of “80” transferred from the plasma to the wafer W is transferred from the wafer W to the front surface of the
又,於圖7中設為「熱輸入量:大、熱阻:小」之例中,「100」之熱量自電漿向晶圓W傳遞。自電漿傳遞至晶圓W之「100」之熱量中之「80」之熱量自晶圓W向靜電吸盤18之正面傳遞。繼之,傳遞至靜電吸盤18之正面之「80」之熱量中之「60」之熱量傳遞至加熱器HT。例如,於以加熱器HT之溫度成為固定之方式進行控制之情形時,自加熱器電源HP藉由加熱功率Ph
對加熱器HT供給「40」之熱量。In addition, in the example of "heat input: large, thermal resistance: small" in FIG. 7, the heat of "100" is transferred to the wafer W from the plasma. The "80" of the "100" heat transferred from the plasma to the wafer W is transferred from the wafer W to the front surface of the
又,於圖7中設為「熱輸入量:小、熱阻:大」之例中,「80」之熱量自電漿向晶圓W傳遞。自電漿傳遞至晶圓W之「80」之熱量中之「40」之熱量自晶圓W向靜電吸盤18之正面傳遞。傳遞至靜電吸盤18之正面之「40」之熱量中之「20」之熱量傳遞至加熱器HT。例如,於以加熱器HT之溫度成為固定之方式進行控制之情形時,自加熱器電源HP藉由加熱功率Ph
對加熱器HT供給「80」之熱量。In addition, in the example of "heat input amount: small, thermal resistance: large" in FIG. 7, the heat of "80" is transferred to the wafer W from the plasma. The heat of “40” of the heat of “80” transferred from the plasma to the wafer W is transferred from the wafer W to the front surface of the
如此,於將加熱器HT之溫度控制為固定之情形時,加熱功率Ph
因自電漿向晶圓W之熱輸入量或晶圓W與靜電吸盤18之正面間之熱阻而變化。由此,圖6(B)所示之期間T2之對加熱器HT之供給電力降低之傾向因自電漿向晶圓W之熱輸入量或晶圓W與靜電吸盤18之正面間之熱阻等而變化。因此,期間T2之對加熱器HT之供給電力之曲線圖可將自電漿向晶圓W之熱輸入量或晶圓W與靜電吸盤18之正面間之熱阻作為參數而模型化。即,期間T2之對加熱器HT之供給電力之變化可將自電漿向晶圓W之熱輸入量或晶圓W與靜電吸盤18之正面間之熱阻作為參數,藉由運算式而模型化。In this way, when the temperature of the heater HT is controlled to be constant, the heating power Ph varies due to the amount of heat input from the plasma to the wafer W or the thermal resistance between the wafer W and the front surface of the
於本實施形態中,將圖6(B)所示之期間T2之對加熱器HT之供給電力之變化以每一單位面積之式而模型化。例如,存在來自電漿之熱通量時之來自每一單位面積之加熱器HT之發熱量qh
可如以下之式(2)般表示。不存在來自電漿之熱通量時之恆定狀態下之來自每一單位面積之加熱器HT之發熱量qh0
可如以下之式(3)般表示。靜電吸盤18之正面與加熱器間之每一單位面積之熱阻Rthc
・A可如以下之式(4)般表示。於將熱通量qp
及熱阻Rth
・A設為參數,如以下之式(5)-(11)般表示a1
、a2
、a3
、λ1
、λ2
、τ1
、τ2
之情形時,發熱量qh
可如以下之式(1)般表示。In this embodiment, the change in the power supply to the heater HT in the period T2 shown in FIG. 6(B) is modeled in terms of a unit area. For example, the calorific value q h from the heater HT per unit area when there is heat flux from the plasma can be expressed as the following formula (2). The calorific value q h0 from the heater HT per unit area in a constant state when there is no heat flux from the plasma can be expressed as the following formula (3). The thermal resistance R thc ·A per unit area between the front surface of the
[數1] [Number 1]
此處,
Ph
係存在來自電漿之熱通量時之加熱功率[W]。
Ph0
係不存在來自電漿之熱通量時之恆定狀態下之加熱功率[W]。
qh
係存在來自電漿之熱通量時之來自每一單位面積之加熱器HT之發熱量[W/m2
]。
qh0
係不存在來自電漿之熱通量時之恆定狀態下之來自每一單位面積之加熱器HT之發熱量[W/m2
]。
qp
係自電漿向晶圓W之每一單位面積之熱通量[W/m2
]。
Rth
・A係晶圓W與靜電吸盤18之正面間之每一單位面積之熱阻[K・m2
/W]。
Rthc
・A係靜電吸盤18之正面與加熱器間之每一單位面積之熱阻[K・m2
/W]。
A係設置有加熱器HT之分割區域75之面積[m2
]。
ρw
係晶圓W之密度[kg/m3
]。
Cw
係晶圓W之每一單位面積之熱容量[J/K・m2
]。
zw
係晶圓W之厚度[m]。
ρc
係構成靜電吸盤18之陶瓷之密度[kg/m3
]。
Cc
係構成靜電吸盤18之陶瓷之每一單位面積之熱容量[J/K・m2
]。
zc
係自靜電吸盤18之正面至加熱器HT之距離[m]。
κc
係構成靜電吸盤18之陶瓷之熱傳導率[W/K・m]。
t係將電漿點火後之經過時間[sec]。Here, P h is the heating power [W] when the heat flux from the plasma exists. P h0 is the heating power [W] in a constant state when there is no heat flux from the plasma. q h is the calorific value [W/m 2 ] from the heater HT per unit area when the heat flux from the plasma exists. q h0 is the heating value [W/m 2 ] from the heater HT per unit area in a constant state when there is no heat flux from the plasma. q p is the heat flux per unit area from plasma to wafer W [W/m 2 ]. R th ·A is the thermal resistance per unit area between the wafer W and the front surface of the electrostatic chuck 18 [K·m 2 /W]. R thc ·A is the thermal resistance per unit area between the front of the
對於式(5)所示之a1
,1/a1
成為表示晶圓W之加熱難度之時間常數。又,對於式(6)所示之a2
,1/a2
成為表示靜電吸盤18之熱之輸入難度、加熱難度之時間常數。又,對於式(7)所示之a3
,1/a3
成為表示靜電吸盤18之熱之穿透難度、加熱難度之時間常數。For a 1 shown in formula (5), 1/a 1 becomes a time constant representing the difficulty of heating the wafer W. Furthermore, for a 2 shown in formula (6), 1/a 2 becomes a time constant representing the difficulty of heat input and heating of the
晶圓W之密度ρw
、晶圓W之每一單位面積之熱容量Cw
及晶圓W之厚度zw
分別根據晶圓W之實際之構成預先規定。加熱器HT之面積A、構成靜電吸盤18之陶瓷之密度ρc
、及構成靜電吸盤18之陶瓷之每一單位面積之熱容量Cc
分別根據電漿處理裝置10之實際之構成預先規定。自靜電吸盤18之正面至加熱器HT之距離zc
、及構成靜電吸盤18之陶瓷之熱傳導κc
亦根據電漿處理裝置10之實際之構成分別預先規定。Rthc
・A係根據熱傳導κc
、距離zc
利用式(4)預先規定。The density ρ w of the wafer W, the heat capacity C w per unit area of the wafer W, and the thickness z w of the wafer W are respectively predetermined according to the actual composition of the wafer W. The area A of the heater HT, the density ρ c of the ceramic constituting the
存在電漿點火後每一經過時間t之來自電漿之熱通量時之加熱功率Ph
、及不存在來自電漿之熱通量時之恆定狀態下之加熱功率Ph0
可使用電漿處理裝置10藉由計測而求出。而且,如式(2)所示,藉由將求得之加熱功率Ph
除以加熱器HT之面積A,可求出存在來自電漿之熱通量時之來自每一單位面積之加熱器HT之發熱量qh
。又,如式(3)所示,藉由將求得之加熱功率Ph0
除以加熱器HT之面積A,可求出不存在來自電漿之熱通量時之恆定狀態下之來自每一單位面積之加熱器HT之發熱量qh0
。After the presence of the ignition of each plasma through the heating power under the heating power when the time t of the heat flux from the plasma P h, and the absence of a steady state when the heat flux from the plasma in plasma processing using P h0 The
繼之,自電漿向晶圓W之每一單位面積之熱通量qp
、及晶圓W與靜電吸盤18之正面間之每一單位面積之熱阻Rth
・A可藉由使用計測結果進行(1)式之擬合而求出。Then, the heat flux q p per unit area from the plasma to the wafer W and the heat resistance R th ·A per unit area between the wafer W and the front surface of the
再者,圖5B之恆定狀態係自圖5A所示之未點火狀態,自電漿向晶圓W之熱輸入量直接於加熱器HT中作為熱輸入增加。因此,自電漿向晶圓W之熱輸入量亦可根據圖6之期間T1所示之未點火狀態之供給電力與期間T3所示之恆定狀態之供給電力之值之差運算。例如,自電漿向晶圓W之每一單位面積之熱通量qp 可如以下之(12)式般,根據將不存在來自電漿之熱通量時(未點火狀態)之加熱功率Ph0 與期間T3所示之恆定狀態之加熱功率Ph 之差換算為每一單位面積所得之值運算。又,自電漿向晶圓W之每一單位面積之熱通量qp 可如以下之(12)式般,根據自不存在來自電漿之熱通量時(未點火狀態)之加熱功率Ph0 求出之來自每一單位面積之加熱器HT之發熱量qh0 與自期間T3所示之恆定狀態之加熱功率Ph 求出之來自每一單位面積之加熱器HT之發熱量qh 之差運算。Furthermore, the constant state in FIG. 5B is from the unfired state shown in FIG. 5A, and the heat input from the plasma to the wafer W is directly increased in the heater HT as the heat input. Therefore, the amount of heat input from the plasma to the wafer W can also be calculated based on the difference between the power supply in the unfired state shown in the period T1 of FIG. 6 and the power supply in the constant state shown in the period T3. For example, the heat flux q p per unit area from the plasma to the wafer W can be as in the following formula (12), according to the heating power when there will be no heat flux from the plasma (unignited state) The difference between P h0 and the heating power P h in the constant state shown in the period T3 is converted to the value obtained per unit area. Moreover, the heat flux q p per unit area from the plasma to the wafer W can be as in the following formula (12), according to the heating power when there is no heat flux from the plasma (unignited state) P h0 of heat obtained from the heat of the heater HT q per unit area of the heat output from the steady state of the period T3 shown h0 P h of the heater HT is obtained from the sum of q per unit area H The difference calculation.
又,圖6(A)所示之期間T2之晶圓W之溫度之曲線圖亦可將自電漿向晶圓W之熱輸入量或晶圓W與靜電吸盤18之正面間之熱阻作為參數而模型化。於本實施形態中,將期間T2之晶圓W之溫度之變化作為每一單位面積之式而模型化。例如,於將熱通量qp
、及熱阻Rth
・A作為參數,使用式(5)-(11)所示之a1
、a2
、a3
、λ1
、λ2
、τ1
、τ2
之情形時,晶圓W之溫度TW
[℃]可如以下之式(13)般表示。In addition, the graph of the temperature of the wafer W during the period T2 shown in FIG. 6(A) can also take the heat input from the plasma to the wafer W or the thermal resistance between the wafer W and the front surface of the
[數2] [Number 2]
此處, TW 係晶圓W之溫度[℃]。 Th 係控制為固定之加熱器HT之溫度[℃]。Here, T W is the temperature [°C] of the wafer W. T h is the temperature of the fixed heater HT [℃].
加熱器之溫度Th 實際上可根據將晶圓W之溫度控制為固定時之條件求出。The heater temperature Th can actually be obtained based on the conditions when the temperature of the wafer W is controlled to be constant.
於藉由使用計測結果進行(1)式之擬合而求出熱通量qp 、及熱阻Rth ・A之情形時,晶圓W之溫度TW 可根據式(13)運算。When the heat flux q p and the thermal resistance R th ·A are obtained by fitting the equation (1) using the measurement result, the temperature T W of the wafer W can be calculated according to the equation (13).
於經過時間t充分長於式(10)、(11)所示之時間常數τ1 、τ2 之情形時,式(13)可如以下之式(14)所示地省略。即,於運算移行至作為圖6之期間T3之恆定狀態之後之晶圓W之溫度TW 成為目標溫度之加熱器HT之溫度Th 之情形時,式(13)可如式(14)般表示。When the elapsed time t is sufficiently longer than the time constants τ 1 and τ 2 shown in equations (10) and (11), equation (13) can be omitted as shown in equation (14) below. That is, when the calculation moves to the case where the temperature T W of the wafer W after the constant state as the period T3 of FIG. 6 becomes the temperature T h of the heater HT of the target temperature, the formula (13) can be as the formula (14) Said.
[數3] [Number 3]
例如,可利用式(14),根據加熱器之溫度Th 、熱通量qp 、熱阻Rth ・A、Rthc ・A,求出晶圓W之溫度TW 。For example, equation (14) can be used to obtain the temperature T W of the wafer W based on the heater temperature Th , heat flux q p , thermal resistance R th ·A, R thc ·A.
然而,電漿處理裝置10存在因異常或故障之產生或經時變化等導致電漿處理之處理條件變化之情形。例如,電漿處理裝置10存在因異常或故障之產生或經時變化等導致處理容器12內之壓力或電漿處理中施加之電力等變化之情形。此種電漿處理之處理條件可列舉來自第1高頻電源HFS之高頻電力HFS之功率、來自第2高頻電源LFS之高頻電力LFS之功率。又,此種電漿處理之處理條件可列舉處理容器12內之壓力、載置台16之表面粗糙度、傳熱氣體之壓力、晶圓W之背面膜厚、晶圓W之翹曲、上部電極30之溫度、積存物遮罩46之溫度。再者,此種電漿處理之處理條件不限於該等,若為因異常或故障之產生或經時變化等而變化者則可為任一處理條件。However, the
於電漿處理裝置10中,於電漿處理之處理條件變化之情形時,來自電漿之熱輸入量或因輻射熱而產生之熱輸入量、晶圓W與靜電吸盤18之正面間之熱阻等變化,且有關載置台16之溫度之值變化。作為該有關載置台16之溫度之值,例如,可列舉未點火狀態下用以將載置台16之溫度維持為特定之溫度之加熱器HT中之發熱量、晶圓W與載置台16之間之熱阻、點火狀態下自電漿流入載置台16之熱輸入量。再者,有關載置台16之溫度之值不限於該等,若為有關載置台16之溫度之值且因電漿處理之處理條件之變化而產生變化者,則可為任一值。In the
例如,電漿處理裝置10於上部電極30之溫度或積存物遮罩46之溫度變化之情形時,對晶圓W之輻射熱之熱輸入量變化。藉此,於未點火狀態下供給至各加熱器HT之加熱功率Ph0
變化,來自每一單位面積之加熱器HT之發熱量qh0
變化。發熱量qh0
係藉由將加熱功率Ph0
除以每個加熱器HT之面積而求出。圖8A係表示上部電極、積存物遮罩之溫度變化之情形時來自加熱器之發熱量之變化之一例之圖。於圖8A表示於電漿未點火狀態下來自供給至設置於中央部(Center)、中間部(Middle)、邊緣部(Edge)、聚焦環部(F/R)之各分割區域75之加熱器HT之加熱功率Ph0
之加熱器HT之發熱量qh0
之變化。實線表示使上部電極30之溫度自40℃變化為120℃之情形時來自加熱器HT之發熱量qh0
之變化。虛線表示使積存物遮罩46之溫度自40℃變化為120℃之情形時來自加熱器HT之發熱量qh0
之變化。如此,於上部電極30之溫度或積存物遮罩46之溫度上升之情形時,對晶圓W之輻射熱之熱輸入量增加,因此,來自加熱器HT之發熱量qh0
減少。又,如實線及虛線所示,於上部電極30及積存物遮罩46中,溫度變化之情形時之各分割區域75中溫度之變化存在不同。例如,來自上部電極30之輻射熱係自載置台16之上部進行熱輸入。因此,於上部電極30之溫度變化之情形時,中央部、中間部等載置台16之面內越靠近中央附近之區域來自加熱器HT之發熱量qh0
越大幅地變化。另一方面,來自積存物遮罩46之輻射熱係自載置台16之側面進行熱輸入。因此,於積存物遮罩46之溫度變化之情形時,邊緣部、聚焦環部等載置台16之面內越靠近周邊附近之區域來自加熱器HT之發熱量qh0
越大幅地變化。由此,可根據來自各分割區域75之加熱器HT之發熱量qh0
之變化模式,確定上部電極30與積存物遮罩46之何者之溫度已變化。For example, when the temperature of the
又,例如,電漿處理裝置10於來自第1高頻電源HFS之高頻電力HFS之功率或來自第2高頻電源LFS之高頻電力LFS之功率變化之情形時,來自電漿之熱輸入量變化。藉此,於將電漿點火之恆定狀態下供給至各加熱器HT之加熱功率Ph
變化,來自每一單位面積之加熱器HT之發熱量qh
變化。發熱量qh
藉由將加熱功率Ph
除以每個加熱器HT之面積而求出。圖8B係表示高頻電力HFS、高頻電力LFS變化之情形時來自加熱器之發熱量之變化之一例之圖。於圖8B表示於將電漿點火之恆定狀態下來自供給至設置於中央部(Center)、中間部(Middle)、邊緣部(Edge)、聚焦環部(F/R)之各分割區域75之加熱器HT之加熱功率Ph
之加熱器HT之發熱量qh
之變化。實線表示使高頻電力HFS之功率自500 W變化為1000 W之情形時來自加熱器HT之發熱量qh
之變化。虛線表示使高頻電力LFS之功率自500 W變化為1000 W之情形時來自加熱器HT之發熱量qh
之變化。如此,於高頻電力HFS之功率或高頻電力LFS之功率上升之情形時,來自電漿之熱輸入量增加,因此,來自加熱器HT之發熱量qh
下降。又,如實線及虛線所示,於高頻電力HFS及高頻電力LFS中,於功率之變化下之各分割區域75中溫度存在不同。例如,於高頻電力HFS之功率變化之情形時,於聚焦環部等載置台16之面內之周邊附近之區域來自加熱器HT之發熱量qh
大幅地變化。另一方面,於高頻電力LFS變化之情形時,邊緣部等載置台16之面內之中央附近及聚焦環部等載置台16之面內之周邊附近之區域之來自加熱器HT之發熱量qh
大幅變化。由此,可根據來自各分割區域75之加熱器HT之發熱量qh
之變化模式,確定高頻電力HFS及高頻電力LFS之何者之功率已變化。Also, for example, the
又,例如,電漿處理裝置10於處理容器12內之壓力變化之情形時,來自電漿之熱輸入量變化。藉此,於將電漿點火之恆定狀態下供給至各加熱器HT之加熱功率Ph
變化,來自每一單位面積之加熱器HT之發熱量qh
變化。發熱量qh
藉由將加熱功率Ph
除以每個加熱器HT之面積而求出。圖8C係表示處理容器內之壓力變化之情形時來自加熱器之發熱量之變化之一例之圖。於圖8C表示於將電漿點火之恆定狀態下供給至設置於中央部(Center)、中間部(Middle)、邊緣部(Edge)、聚焦環部(F/R)之各分割區域75之加熱器HT之來自加熱器HT之發熱量qh
之變化。實線表示使處理容器12內之壓力自30 mTorr變化為50 mTorr之情形時來自加熱器HT之發熱量qh
之變化。如此,於處理容器12內之壓力增加之情形時,來自電漿之熱輸入量降低,因此,來自加熱器HT之發熱量qh
增加。又,於處理容器12內之壓力增加之情形時,來自聚焦環部等載置台16之面內之周邊附近之區域之加熱器HT之發熱量qh
大幅地變化。由此,可根據來自各分割區域75之加熱器HT之發熱量qh
之變化模式,確定處理容器12內之壓力是否變化。Also, for example, when the
又,例如,電漿處理裝置10於供給至靜電吸盤18之上表面與晶圓W之背面之間之傳熱氣體之壓力變化之情形時,晶圓W與靜電吸盤18之正面間之熱阻變化。又,電漿處理裝置10於晶圓W之背面膜厚變化之情形時,晶圓W與靜電吸盤18之正面間之熱阻變化。圖8D係表示傳熱氣體之壓力、晶圓W之背面膜厚變化之情形時之熱阻之變化之一例之圖。於圖8D表示中央部(Center)、中間部(Middle)、邊緣部(Edge)、聚焦環部(F/R)之各分割區域75之熱阻Rth
・A之變化。實線表示使供給至靜電吸盤18之上表面與晶圓W之背面之間之傳熱氣體之壓力自10 Torr變化為30 Torr之情形時之熱阻之變化。虛線表示使晶圓W之背面之SiO2
層之膜厚自0 nm變化為1000 nm之情形時之熱阻之變化。如此,於傳熱氣體之壓力或晶圓W之背面之膜厚上升之情形時,熱阻變化,來自電漿之熱輸入量變化。又,如實線及虛線所示,於傳熱氣體之壓力及晶圓W之背面之膜厚中,熱阻之變化中存在不同。例如,於傳熱氣體之壓力變化之情形時,中央部等晶圓W之中央附近之區域之熱阻大幅地變化。另一方面,於晶圓W之背面之膜厚變化之情形時,於晶圓W之區域整體,熱阻大幅地變化。由此,可根據各分割區域75之熱阻之變化模式,確定傳熱氣體之壓力或晶圓W之背面之膜厚是否變化。Also, for example, when the
返回圖3。加熱器控制部102a控制各加熱器HT之溫度。例如,加熱器控制部102a將指示對各加熱器HT之供給電力之控制資料向加熱器電源HP輸出,控制自加熱器電源HP對各加熱器HT供給之供給電力,藉此,控制各加熱器HT之溫度。Return to Figure 3. The
於電漿處理時,於加熱器控制部102a設定設為各加熱器HT之目標之設定溫度。例如,於加熱器控制部102a中,對於載置區域18a之每一分割區域75,將設為目標之晶圓W之溫度設定為該分割區域75之加熱器HT之設定溫度。該設為目標之晶圓W之溫度係例如對於晶圓W之電漿蝕刻之精度成為最佳之溫度。During plasma processing, the
加熱器控制部102a於電漿處理時,以各加熱器HT成為已設定之設定溫度之方式,控制對各加熱器HT之供給電力。例如,加熱器控制部102a將輸入至外部介面101之溫度資料所示之載置區域18a之各分割區域75之溫度於每個分割區域75中與該分割區域75之設定溫度進行比較。加熱器控制部102a使用比較結果,確定溫度相對於設定溫度較低之分割區域75、及溫度相對於設定溫度較高之分割區域75。加熱器控制部102a對加熱器電源HP輸出使對溫度相對於設定溫度較低之分割區域75之供給電力增加且使對溫度相對於設定溫度較高之分割區域75之供給電力減少之控制資料。During the plasma processing, the
第1獲取部102b獲取表示電漿處理之處理條件變化之情形時之有關載置台16之溫度之值之變化之變化資訊104a。The first acquiring
首先,第1獲取部102b將晶圓W配置於載置台16,將設為電漿處理之處理條件之處理參數作為標準條件,實施電漿處理,獲取有關載置台16之溫度之值。標準條件例如設為於生產半導體之生產程序中對晶圓W實施實際之電漿處理之處理條件。第1獲取部102b將處理條件作為標準條件,實施電漿處理。First, the first acquiring
於電漿處理時,於加熱器控制部102a中設定設為各加熱器HT之目標之設定溫度。加熱器控制部102a於電漿處理時,以各加熱器HT成為已設定之設定溫度之方式,控制對各加熱器HT之供給電力。During plasma processing, the
第1獲取部102b於利用加熱器控制部102a以各加熱器HT之溫度成為固定之方式,控制對各加熱器HT之供給電力之狀態下,實施電漿處理,獲取有關載置台16之溫度之值。例如,第1獲取部102b計測電漿處理開始前之電漿為未點火狀態下之對各加熱器HT之供給電力。又,第1獲取部102b計測自將電漿點火起至對各加熱器HT之供給電力降低之傾向之變動穩定為止之過渡狀態下之對各加熱器HT之供給電力。又,第1獲取部102b計測於將電漿點火後對各加熱器HT之供給電力不再降低而穩定之恆定狀態下對各加熱器HT之供給電力。未點火狀態下對各加熱器HT之供給電力於各加熱器HT中計測至少一個即可,亦可計測複數次將平均值作為未點火狀態之供給電力。過渡狀態及恆定狀態下對各加熱器HT之供給電力計測2次以上即可。計測供給電力之計測時間較佳為包含供給電力降低之傾向較大之時間。又,計測時間於計測次數較少之情形時,較佳為隔開特定期間以上。於本實施形態中,第1獲取部102b於電漿處理之期間,以特定週期(例如0.1秒週期)計測對各加熱器HT之供給電力。藉此,多次計測過渡狀態及恆定狀態下之對各加熱器HT之供給電力。The
第1獲取部102b以特定之週期計測未點火狀態、過渡狀態及恆定狀態之對各加熱器HT之供給電力。The
第1獲取部102b對於每個加熱器HT,運算未點火狀態下用以將溫度維持為特定之溫度之加熱器HT中之發熱量。例如,第1獲取部102b對於每個加熱器HT,根據未點火狀態下之對加熱器HT之供給電力,運算未點火狀態之加熱功率Ph0
。The first acquiring
又,第1獲取部102b對於每個加熱器HT運算晶圓W與載置台16之間之熱阻、及點火狀態下自電漿流入載置台16之熱輸入量。例如,第1獲取部102b相對於對於每個加熱器HT,將來自電漿之熱輸入量及晶圓W與加熱器HT間之熱阻設為參數,運算過渡狀態之供給電力之運算模型,使用計測所得之未點火狀態及過渡狀態之供給電力進行擬合,對於每個加熱器HT運算熱輸入量及熱阻。In addition, the
例如,第1獲取部102b對於每個加熱器HT,求出每一經過時間t之未點火狀態之加熱功率Ph0
。又,第1獲取部102b對於每個加熱器HT,求出每一經過時間t之過渡狀態之加熱功率Ph
。第1獲取部102b藉由將所求出之加熱功率Ph0
除以每個加熱器HT之面積而求出每一經過時間t之未點火狀態之來自每一單位面積之加熱器HT之發熱量qh0
。又,第1獲取部102b藉由將所求出之加熱功率Ph
除以每個加熱器HT之面積,而求出每一經過時間t之過渡狀態之來自每一單位面積之加熱器HT之發熱量qh
。For example, the first acquiring
繼之,第1獲取部102b將上述式(1)-(11)用作運算模型,對於每個加熱器HT,進行每一經過時間t之發熱量qh
及發熱量qh0
之擬合,運算誤差變為最小之熱通量qp
、及熱阻Rth
・A。Subsequently, the first acquiring
再者,第1獲取部102b亦可根據未點火狀態之供給電力與恆定狀態之供給電力之差,運算自電漿向晶圓W之熱輸入量。例如,第1獲取部102b亦可使用(12)式,根據將未點火狀態之加熱功率Ph0
與恆定狀態之加熱功率Ph
之差除以每個加熱器HT之面積,運算熱通量qp
。Furthermore, the
繼而,第1獲取部102b使設為電漿處理之處理條件之處理參數變化。例如,第1獲取部102b作為處理參數使高頻電力HFS之功率、高頻電力LFS之功率、傳熱氣體之壓力、晶圓W之背面膜厚、上部電極30之溫度、積存物遮罩46之溫度之任一者變化。再者,處理參數較佳為逐一變化,但亦可使複數個同時變化。Then, the
第1獲取部102b於載置台16配置新的晶圓W,於已變化之處理條件下實施電漿處理,獲取有關載置台16之溫度之值。例如,第1獲取部102b於加熱器控制部102a以各加熱器HT之溫度成為固定之設定溫度之方式控制對各加熱器HT之供給電力之狀態下,計測電漿處理之未點火狀態、過渡狀態及恆定狀態下之對各加熱器HT之供給電力。The first acquiring
第1獲取部102b對於每個加熱器HT,根據未點火狀態下之對加熱器HT之供給電力,運算未點火狀態之加熱功率Ph0
作為未點火狀態下用以將溫度維持為特定之溫度之加熱器HT中之發熱量。又,第1獲取部102b對上述運算模型,使用所計測之未點火狀態及過渡狀態之供給電力進行擬合,對於每個加熱器HT運算對晶圓W之熱輸入量及熱阻。再者,第1獲取部102b亦可根據未點火狀態之供給電力與恆定狀態之供給電力之差運算自電漿向晶圓W之熱輸入量。For each heater HT, the
第1獲取部102b使設為電漿處理之處理條件之處理參數分別於特定之範圍內變化,獲取有關載置台16之溫度之值。例如,第1獲取部102b使設為電漿處理之處理條件之處理參數分別於特定之範圍內變化,運算加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A。繼之,第1獲取部102b產生表示電漿處理之處理條件變化之情形時之有關載置台16之溫度之值之變化之變化資訊104a。例如,第1獲取部102b對於設為電漿處理之處理條件之已變化之每個處理參數,產生記錄有各分割區域75之有關載置台16之溫度之值之變化模式之變化資訊104a。例如,第1獲取部102b產生記錄有表示高頻電力HFS之功率、高頻電力LFS之功率、傳熱氣體之壓力、晶圓W之背面膜厚、上部電極30之溫度、積存物遮罩46之溫度變化之情形時之各分割區域75之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A之變化之變化模式之變化資訊104a。變化資訊104a亦可為對於每個處理條件記憶加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A者。又,變化資訊104a亦可將任一處理條件下之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A設為基準,記憶處理條件、加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A與基準之差。第1獲取部102b使記憶部104記憶所產生之變化資訊104a。The first acquiring
藉此,於記憶部104記憶變化資訊104a。再者,於本實施形態中,以第1獲取部102b實施已改變處理條件之電漿處理,獲取變化資訊104a之情形為例進行說明,但不限於此。於記憶部104中亦可記憶事先準備之變化資訊104a或於其他裝置中產生之變化資訊104a。Thereby, the change information 104a is stored in the storage unit 104. Furthermore, in the present embodiment, a case where the first acquiring
然而,如上所述,電漿處理裝置10存在因異常或故障之產生或經時變化等導致電漿處理之處理條件變化之情形。因此,實施形態之電漿處理裝置10於生產半導體之生產程序中對晶圓W進行電漿處理時,基於記憶於記憶部104之變化資訊104a,監視電漿處理之處理條件之變化。However, as described above, the
於電漿處理時,於加熱器控制部102a設定設為各加熱器HT之目標之設定溫度。加熱器控制部102a於電漿處理時,以各加熱器HT成為已設定之設定溫度之方式,控制對各加熱器HT之供給電力。During plasma processing, the
第2獲取部102c於加熱器控制部102a以各加熱器HT之溫度成為固定之設定溫度之方式,控制對各加熱器HT之供給電力之狀態下,實施電漿處理,獲取有關載置台16之溫度之值。例如,第2獲取部102c計測電漿處理開始前之電漿未點火狀態下之對各加熱器HT之供給電力。又,第2獲取部102c計測自將電漿點火起至對各加熱器HT之供給電力降低之傾向之變動穩定為止之過渡狀態下之對各加熱器HT之供給電力。又,第2獲取部102c計測將電漿點火後對各加熱器HT之供給電力不再降低而穩定之恆定狀態下之對各加熱器HT之供給電力。未點火狀態下之對各加熱器HT之供給電力於各加熱器HT中計測至少1個即可,亦可計測複數次,將平均值設為未點火狀態之供給電力。過渡狀態及恆定狀態下之對各加熱器HT之供給電力計測2次以上即可。較佳為,計測供給電力之計測時間包含供給電力降低之傾向較大之時間。又,計測時間於計測次數較少之情形時,較佳為隔開特定期間以上。於本實施形態中,第2獲取部102c於電漿處理之期間,以特定週期(例如0.1秒週期)計測對各加熱器HT之供給電力。藉此,多次計測過渡狀態及恆定狀態下之對各加熱器HT之供給電力。The second acquisition unit 102c performs plasma processing in a state where the
第2獲取部102c以特定之週期計測未點火狀態、過渡狀態、及恆定狀態之對各加熱器HT之供給電力。例如,第2獲取部102c於更換晶圓W且將經更換之晶圓W載置於載置台16進行電漿處理時,每次計測未點火狀態、過渡狀態、及恆定狀態之對各加熱器HT之供給電力。再者,例如第2獲取部102c亦可對於每次電漿處理計測未點火狀態、過渡狀態、恆定狀態之對各加熱器HT之供給電力。The second acquisition unit 102c measures the power supplied to each heater HT in the unfired state, the transient state, and the steady state in a specific cycle. For example, when the second acquisition unit 102c replaces the wafer W and places the replaced wafer W on the mounting table 16 for plasma processing, each time the unfired state, the transient state, and the constant state are measured for each heater Power supply of HT. Furthermore, for example, the second acquisition unit 102c may measure the power supplied to each heater HT in the unfired state, the transient state, and the steady state for each plasma treatment.
第2獲取部102c對於每個加熱器HT,運算未點火狀態下用以將溫度維持為特定之溫度之加熱器HT中之發熱量。例如,第2獲取部102c對於每個加熱器HT,根據未點火狀態下之對加熱器HT之供給電力,運算未點火狀態之加熱功率Ph0 。The second acquiring unit 102c calculates the heating value of the heater HT for maintaining the temperature at a specific temperature in the unfired state for each heater HT. For example, for each heater HT, the second acquisition unit 102c calculates the heating power P h0 in the unfired state based on the power supplied to the heater HT in the unfired state.
又,第2獲取部102c對於每個加熱器HT,運算晶圓W與載置台16之間之熱阻、及點火狀態下自電漿流入載置台16之熱輸入量。例如,第2獲取部102c對於每個加熱器HT,相對於上述運算模型,使用所計測之未點火狀態及過渡狀態之供給電力進行擬合,運算熱輸入量及熱阻。In addition, the second acquisition unit 102c calculates the thermal resistance between the wafer W and the mounting table 16 and the amount of heat input from the plasma into the mounting table 16 in the ignition state for each heater HT. For example, for each heater HT, the second acquisition unit 102c uses the measured unfired state and transient state power supply to perform fitting with respect to the aforementioned calculation model, and calculates the heat input amount and the thermal resistance.
例如,第2獲取部102c對於每個加熱器HT,求出每一經過時間t之未點火狀態之加熱功率Ph0 。又,第2獲取部102c對於每個加熱器HT,求出每一經過時間t之過渡狀態之加熱功率Ph 。第2獲取部102c藉由將所求出之加熱功率Ph0 除以每個加熱器HT之面積,而求出每一經過時間t之未點火狀態之來自每一單位面積之加熱器HT之發熱量qh0 。又,第2獲取部102c藉由將所求出之加熱功率Ph 除以每個加熱器HT之面積,求出每一經過時間t之過渡狀態之來自每一單位面積之加熱器HT之發熱量qh 。For example, the second acquisition unit 102c obtains the heating power P h0 in the unfired state for each elapsed time t for each heater HT. In addition, the second acquisition unit 102c obtains the heating power P h in the transient state for each elapsed time t for each heater HT. The second acquisition unit 102c calculates the heat generated by the heater HT per unit area in the unfired state for each elapsed time t by dividing the calculated heating power P h0 by the area of each heater HT The quantity q h0 . In addition, the second acquiring unit 102c calculates the heating power from each heater HT per unit area in the transitional state for each elapsed time t by dividing the calculated heating power Ph by the area of each heater HT The quantity q h .
繼之,第2獲取部102c將上述式(1)-(11)用作運算模型,對於每個加熱器HT,進行每一經過時間t之發熱量qh 及發熱量qh0 之擬合,運算誤差變為最小之熱通量qp 、及熱阻Rth ・A。Subsequently, the second acquisition unit 102c uses the above-mentioned equations (1)-(11) as a calculation model, and performs fitting of the heating value q h and the heating value q h0 for each elapsed time t for each heater HT, The calculation error becomes the minimum heat flux q p and the thermal resistance R th ·A.
再者,第2獲取部102c亦可根據未點火狀態之供給電力與恆定狀態之供給電力之差,運算自電漿向晶圓W之熱輸入量。例如,第1獲取部102b亦可使用(12)式,將未點火狀態之加熱功率Ph0
與恆定狀態之加熱功率Ph
之差除以每個加熱器HT之面積,由此運算熱通量qp
。Furthermore, the second acquisition unit 102c may also calculate the amount of heat input from the plasma to the wafer W based on the difference between the power supply in the unfired state and the power supply in the steady state. For example, the first acquiring
第2獲取部102c以特定之週期運算未點火狀態之加熱功率Ph0 、熱通量qp 、及熱阻Rth ・A。例如,第2獲取部102c每當更換晶圓W時,使用於將該晶圓W載置於載置台16之狀態下測定之未點火狀態、過渡狀態及恆定狀態之供給電力,運算未點火狀態之加熱功率Ph0 、熱通量qp 、及熱阻Rth ・A。The second acquisition unit 102c calculates the heating power P h0 in the unfired state, the heat flux q p , and the thermal resistance R th ·A in a specific cycle. For example, each time the second acquisition unit 102c replaces the wafer W, it calculates the unfired state by using the supply power for the unfired state, the transient state, and the steady state measured while the wafer W is placed on the mounting table 16 The heating power P h0 , the heat flux q p , and the thermal resistance R th ·A.
設定溫度運算部102d對於每個加熱器HT,使用運算所得之熱輸入量及熱阻,運算晶圓W成為目標溫度之加熱器HT之設定溫度。例如,設定溫度運算部102d對於每個加熱器HT,將運算所得之熱通量qp 、及熱阻Rth ・A帶入式(5)、(6)、(13),使用式(5)-(11)所示之a1 、a2 、a3 、λ1 、λ2 、τ1 、τ2 ,根據式(13)運算加熱器HT之溫度Th 。例如,設定溫度運算部102d將經過時間t設為可視為恆定狀態之程度之較大之特定值,運算加熱器HT之溫度Th 。運算之加熱器HT之溫度Th 係晶圓W之溫度成為目標溫度之加熱器HT之溫度。再者,加熱器HT之溫度Th亦可根據式(14)求出。The set temperature calculation unit 102d uses the calculated heat input and thermal resistance for each heater HT to calculate the set temperature of the heater HT at which the wafer W becomes the target temperature. For example, for each heater HT, the set temperature calculation unit 102d takes the calculated heat flux q p and the thermal resistance R th ·A into equations (5), (6), (13), and uses equations (5) )-A 1 , a 2 , a 3 , λ 1 , λ 2 , τ 1 , τ 2 shown in (11), calculate the temperature T h of the heater HT according to formula (13). For example, the set temperature calculation unit 102d sets the elapsed time t to a large specific value that can be regarded as a constant state, and calculates the temperature Th of the heater HT. The calculated temperature T h of the heater HT is the temperature of the heater HT at which the temperature of the wafer W becomes the target temperature. Furthermore, the temperature Th of the heater HT can also be calculated according to equation (14).
再者,設定溫度運算部102d亦可根據式(13)運算當前之加熱器HT之溫度T下之晶圓W之溫度TW 。例如,設定溫度運算部102d運算於當前之加熱器HT之溫度T下,將經過時間t設為可視為恆定狀態之程度之較大之特定之值之情形時之晶圓W之溫度TW 。繼而,設定溫度運算部102d運算所運算之溫度TW 與目標溫度之差值ΔTW 。繼之,設定溫度運算部102d亦可運算自當前之加熱器HT之溫度T進行差值ΔTW 之減法運算所得之溫度作為晶圓W之溫度成為目標溫度之加熱器HT之溫度Th 。Furthermore, the set temperature calculation unit 102d can also calculate the temperature T W of the wafer W at the current temperature T of the heater HT according to formula (13). For example, the set temperature calculation unit 102d calculates the temperature T W of the wafer W when the elapsed time t is set to a larger specific value that can be regarded as a constant state under the current temperature T of the heater HT. Then, the set temperature calculation unit 102d calculates the difference ΔT W between the calculated temperature T W and the target temperature. Subsequently, the set temperature calculation unit 102d may also calculate the temperature obtained by subtracting the difference ΔT W from the current temperature T of the heater HT as the temperature T h of the heater HT at which the temperature of the wafer W becomes the target temperature.
設定溫度運算部102d將加熱器控制部102a之各加熱器HT之設定溫度修正為晶圓W之溫度成為目標溫度之加熱器HT之溫度。The set temperature calculation unit 102d corrects the set temperature of each heater HT of the
設定溫度運算部102d以特定之週期運算晶圓W之溫度成為目標溫度之加熱器HT之溫度,並修正各加熱器HT之設定溫度。例如,設定溫度運算部102d每當更換晶圓W時,運算晶圓W之溫度成為目標溫度之加熱器HT之溫度,且修正各加熱器HT之設定溫度。再者,例如設定溫度運算部102d亦可每當進行電漿處理時,運算晶圓W之溫度成為目標溫度之加熱器HT之溫度,且修正各加熱器HT之設定溫度。The set temperature calculation unit 102d calculates the temperature of the heater HT at which the temperature of the wafer W becomes the target temperature in a specific cycle, and corrects the set temperature of each heater HT. For example, whenever the wafer W is replaced, the set temperature calculation unit 102d calculates the temperature of the heater HT whose temperature becomes the target temperature, and corrects the set temperature of each heater HT. Furthermore, for example, the set temperature calculation unit 102d may calculate the temperature of the heater HT at which the temperature of the wafer W becomes the target temperature and correct the set temperature of each heater HT every time the plasma processing is performed.
藉此,本實施形態之電漿處理裝置10可將電漿處理中之晶圓W之溫度高精度地控制為目標溫度。Thereby, the
然而,如上所述,電漿處理裝置10存在因異常或故障之產生或經時變化等導致電漿處理之處理條件變化之情形。However, as described above, the
因此,監視部102e基於變化資訊104a,根據利用第2獲取部獲取之有關載置台16之溫度之值之變化,監視電漿處理之處理條件之變化。例如,監視部102e以特定之週期記憶利用第2獲取部運算之各加熱器HT之未點火狀態之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A。繼之,監視部102e監視各加熱器HT之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A中產生了記憶於變化資訊104a之何種變化模式之變化。例如,監視部102e將最初之晶圓W與最近之晶圓W中分別運算所得之各加熱器HT之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A進行比較。繼之,監視部102e求出最初之晶圓W與最近之晶圓W之每個加熱器HT之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A之變化。監視部102e判定每個加熱器HT之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A之變化相當於記憶於變化資訊104a之何種變化模式之變化。例如,監視部102e判定每個加熱器HT之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A之何者中產生了特定之容許值以上之變化。監視部102e於產生了特定之容許值以上之變化之情形時,將每個加熱器HT之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A之變化模式與記憶於變化資訊104a之變化模式進行比較,確定特定以上類似之變化模式。例如,監視部102e比較之結果確定加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A之某一個中各分割區域75之差分別為容許值以內之變化模式。再者,監視部102e亦可確定複數種變化模式。又,監視部102e於確定複數種變化模式之情形時,亦可確定一個差最小之變化模式。監視部102e將以確定之變化模式不斷變化之處理參數確定為變化之電漿處理之處理條件。Therefore, based on the change information 104a, the
警報部102f於監視部102e之監視之結果於電漿處理之處理條件中檢測到特定以上之變化之情形時,進行警報。例如,警報部102f於監視部102e之監視之結果,每個加熱器HT之加熱功率Ph0
、熱通量qp
、及熱阻Rth
・A之某一個已產生特定之容許值以上之變化之情形時,進行警報。又,警報部102f進行將由監視部102e確定之處理參數作為變化之電漿處理之處理條件報知之警報。警報部102f於確定複數種變化模式之情形時,進行將於各種變化模式中不斷變化之處理參數作為已變化之電漿處理之處理條件報知之警報。警報只要可將異常報知工程管理者或電漿處理裝置10之管理者等,則可為任何方式。例如,警報部102f於使用者介面103顯示報知異常之訊息。The alarm unit 102f issues an alarm when the result of monitoring by the
藉此,本實施形態之電漿處理裝置10於因異常或故障之產生或經時變化等導致電漿處理之處理條件變化之情形時,可報知異常之產生。又,電漿處理裝置10可報知成為異常之處理參數。藉此,工程管理者或電漿處理裝置10之管理者可獲知異常或故障之產生或經時變化之產生。又,工程管理者或電漿處理裝置10之管理者可根據所報知之處理參數推定應維護之部分,從而可使電漿處理裝置10儘早恢復。Thereby, the
修正部102g於監視部102e之監視之結果,電漿處理之處理條件中檢測到特定以上之變化之情形時,以消除檢測所得之處理條件之變化之方式,修正電漿處理之處理條件。例如,修正部102g將利用監視部102e確定之處理參數之值修正已變化之量。As a result of monitoring by the
藉此,本實施形態之電漿處理裝置10於因異常或故障之產生或經時變化等導致電漿處理之處理條件變化之情形時,可自動地將已變化之處理條件修正為原來之狀態。Thereby, the
[處理之流程]
繼而,對本實施形態之電漿處理裝置10實施之處理之流程進行說明。首先,對電漿處理裝置10產生變化資訊104a之產生處理之流程進行說明。圖9係表示實施形態之產生處理之流程之一例之流程圖。該產生處理於特定之時間、例如進行由使用者介面103指示產生處理開始之特定操作之時間執行。[Processing process]
Next, the flow of processing performed by the
加熱器控制部102a以各加熱器HT成為設定溫度之方式,控制對各加熱器HT之供給電力(步驟S10)。The
第1獲取部102b將設為電漿處理之處理條件之處理參數作為標準條件實施電漿處理,獲取有關載置台16之溫度之值(步驟S11)。The first acquiring
第1獲取部102b判定是否已於使處理參數分別於特定之範圍內變化之所有處理條件下實施了電漿處理(步驟S12)。於所有處理條件下實施了電漿處理之情形時(步驟S12:是),向下述步驟S15移行。The first acquiring
另一方面,於未在所有處理條件下實施電漿處理之情形時(步驟S12:否),第1獲取部102b將處理條件變更為尚未實施之處理條件(步驟S13)。第1獲取部102b於已變更之處理條件下實施電漿處理,獲取有關載置台16之溫度之值(步驟S14),並向上述步驟S12移行。On the other hand, when the plasma treatment has not been performed under all treatment conditions (step S12: No), the first acquiring
第1獲取部102b根據所獲取之各處理條件下之有關載置台16之溫度之值,產生表示處理條件已變化之情形時有關載置台16之溫度之值之變化之變化資訊104a(步驟S15)。第1獲取部102b將所產生之變化資訊104a儲存於記憶部104(步驟S16),並結束處理。The first acquiring
繼而,對電漿處理裝置10監視異常之產生之監視處理之流程進行說明。圖10係表示實施形態之監視處理之流程之一例之流程圖。該監視處理於特定之時間、例如開始生產半導體之生產程序之電漿處理之時間執行。Next, the flow of the monitoring process for the
加熱器控制部102a以各加熱器HT成為設定溫度之方式,控制對各加熱器HT之供給電力(步驟S20)。The
第2獲取部102c於電漿處理時,以特定之週期獲取有關載置台16之溫度之值(步驟S21)。The second acquiring unit 102c acquires the value of the temperature of the mounting table 16 in a specific cycle during plasma processing (step S21).
監視部102e基於變化資訊104a,根據由第2獲取部獲取之有關載置台16之溫度之值之變化,監視電漿處理之處理條件之變化(步驟S22)。Based on the change information 104a, the
警報部102f判定監視部102e之監視之結果是否於電漿處理之處理條件中檢測到特定以上之變化(步驟S23)。於未檢測到變化之情形時(步驟S23:否),向下述步驟S26移行。The alarm unit 102f determines whether or not the result of the monitoring by the
另一方面,於檢測到變化之情形時(步驟S23:是),警報部102f進行警報(步驟S24)。修正部102g以消除檢測所得之處理條件之變化之方式,修正電漿處理之處理條件(步驟S25)。On the other hand, when a changed situation is detected (step S23: Yes), the alarm unit 102f issues an alarm (step S24). The correcting unit 102g corrects the processing conditions of the plasma processing in a manner to eliminate the changes in the processing conditions obtained by the detection (step S25).
監視部102e判定生產程序之電漿處理是否全部完成(步驟S26)。於生產程序之電漿處理未全部完成之情形時(步驟S26:否),向上述步驟S21移行。The
另一方面,於生產程序之電漿處理全部完成之情形時(步驟S26:是),結束處理。On the other hand, when the plasma processing of the production process is all completed (step S26: Yes), the processing is ended.
如此,本實施形態之電漿處理裝置10具有記憶部104、第2獲取部102c、及監視部102e。記憶部104記憶表示對載置於載置台16之晶圓W之電漿處理之處理條件變化之情形時有關載置台16之溫度之值之變化之變化資訊104a。第2獲取部102c以特定之週期獲取有關載置台16之溫度之值。監視部102e基於變化資訊104a,根據由第2獲取部102c獲取之有關載置台16之溫度之值之變化,監視電漿處理之處理條件之變化。藉此,電漿處理裝置10不配置感測器便可檢測異常之產生。In this way, the
又,本實施形態之電漿處理裝置10於載置台16設置有能夠調整載置晶圓W之載置面之溫度之加熱器HT。有關載置台之溫度之值設為未點火狀態下用以將載置台16之溫度維持為特定之溫度之加熱器HT中之發熱量、晶圓W與載置台16之間之熱阻、及點火狀態下自電漿流入載置台16之熱輸入量之至少一者。藉此,電漿處理裝置10不配置感測器便可檢測異常之產生。In the
又,載置台16設置有能夠調整載置晶圓W之載置面之溫度之加熱器HT。有關載置台16之溫度之值設為未點火狀態下用以將載置台16之溫度維持為特定之溫度之加熱器HT中之發熱量、晶圓W與載置台16之間之熱阻、及點火狀態下自電漿流入載置台16之熱輸入量之至少一者。藉此,電漿處理裝置10不配置感測器便可檢測異常之產生。In addition, the mounting table 16 is provided with a heater HT capable of adjusting the temperature of the mounting surface on which the wafer W is mounted. The value of the temperature of the mounting table 16 is set to the heating value of the heater HT used to maintain the temperature of the mounting table 16 at a specific temperature in the unfired state, the thermal resistance between the wafer W and the mounting table 16, and At least one amount of heat input from the plasma into the mounting table 16 in the ignition state. In this way, the
又,第2獲取部102c於以加熱器HT之溫度成為固定之方式控制對加熱器HT之供給電力之狀態下,計測未將電漿點火之未點火狀態、及自將電漿點火起對加熱器HT之供給電力降低之過渡狀態下之供給電力。繼之,第2獲取部102c將自電漿流入載置台16之熱輸入量及晶圓W與載置台16之間之熱阻設為參數,相對於運算過渡狀態之供給電力之運算模型,使用計測所得之未點火狀態及過渡狀態之供給電力進行擬合,運算熱輸入量及熱阻。藉此,電漿處理裝置10不配置感測器便可獲取熱輸入量及熱阻。In addition, the second acquisition unit 102c measures the unignited state in which the plasma is not ignited, and heats up since the plasma is ignited in a state where the power supply to the heater HT is controlled so that the temperature of the heater HT becomes constant. The power supply in the transient state where the power supply of the device HT decreases. Next, the second acquisition unit 102c sets the heat input amount from the plasma flowing into the mounting table 16 and the thermal resistance between the wafer W and the mounting table 16 as parameters, and uses the calculation model for calculating the power supply in the transient state. The measured power supply in the unfired state and the transient state is fitted to calculate the heat input and thermal resistance. In this way, the
又,第2獲取部102c於以加熱器HT之溫度成為固定之方式控制對加熱器HT之供給電力之狀態下,計測未將電漿點火之未點火狀態、及將電漿點火且對加熱器HT之供給電力穩定之恆定狀態下之供給電力。第2獲取部102c根據計測所得之未點火狀態及恆定狀態之供給電力之差,運算熱輸入量。藉此,電漿處理裝置10不配置感測器便可獲取熱輸入量。In addition, the second acquisition unit 102c measures the unignited state in which the plasma is not ignited, and the plasma is ignited and the heater is ignited while controlling the power supply to the heater HT so that the temperature of the heater HT is fixed. The power supply of HT is stable and the power supply is in a constant state. The second acquisition unit 102c calculates the amount of heat input based on the difference between the measured unfired state and the steady state power supply. In this way, the
又,第2獲取部102c於以加熱器HT之溫度成為固定之方式控制對加熱器HT之供給電力之狀態下,計測未將電漿點火之未點火狀態之供給電力。繼之,第2獲取部102c根據計測所得之未點火狀態之供給電力,運算未點火狀態下用以將載置台16之溫度維持為特定之溫度之加熱器HT中之發熱量。藉此,電漿處理裝置10不配置感測器便可獲取加熱器HT中之發熱量。In addition, the second acquisition unit 102c measures the supply power in the unignited state where the plasma is not ignited in a state where the power supply to the heater HT is controlled so that the temperature of the heater HT becomes constant. Then, the second acquisition unit 102c calculates the heating value of the heater HT for maintaining the temperature of the mounting table 16 at a specific temperature in the unfired state based on the measured supply power in the unfired state. Thereby, the
又,載置台16將載置晶圓W之載置面分割為複數個分割區域75,於各分割區域75設置有加熱器HT。變化資訊104a記憶有每次設為電漿處理之處理條件之處理參數變化時各分割區域75之有關載置台16之溫度之值之變化模式。第2獲取部102c獲取各分割區域75之有關載置台16之溫度之值。監視部102e基於變化資訊104a,根據由第2獲取部102c獲取之各分割區域75之有關載置台16之溫度之值之變化模式,確定已變化之處理參數。藉此,電漿處理裝置10不配置感測器便可確定已變化之處理參數。In addition, the mounting table 16 divides the mounting surface on which the wafer W is mounted into a plurality of divided
又,電漿處理裝置10更具有警報部102f。警報部102f於監視部102e之監視之結果,電漿處理之處理條件中檢測到特定以上之變化之情形時,進行警報。藉此,電漿處理裝置10於電漿處理之處理條件變化特定以上之情形時,可進行警報。In addition, the
又,電漿處理裝置10更具有修正部102g。修正部102g於監視部102e之監視之結果,電漿處理之處理條件中檢測到特定以上之變化之情形時,以消除該處理條件之變化之方式修正電漿處理之處理條件。藉此,電漿處理裝置10可自動地修正已變化之電漿處理之處理條件。In addition, the
以上,對實施形態進行了說明,但因認為本次揭示之實施形態於所有方面均為例示而並非限制性者。實際上,上述實施形態能夠以多種形態實現。又,上述實施形態亦可不脫離申請範圍及其主旨而以多種形態進行省略、置換、變更。As mentioned above, although the embodiment was described, it is considered that the embodiment disclosed this time is an illustration in all respects, and is not restrictive. Actually, the above-mentioned embodiment can be realized in various forms. In addition, the above-mentioned embodiment may be omitted, replaced, and changed in various forms without departing from the scope of the application and its gist.
例如,於上述實施形態中,以作為被處理體對半導體晶圓進行電漿處理之情形為例進行了說明,但不限於此。被處理體若為因溫度而對電漿處理之進行存在影響者則可為任一者。For example, in the above-mentioned embodiment, the case where the semiconductor wafer is subjected to plasma processing as the object to be processed has been described as an example, but it is not limited to this. The object to be processed can be any one that has an influence on the progress of the plasma treatment due to temperature.
又,於上述實施形態中,以進行警報部102f之警報、及修正部102g之處理條件之修正之兩者之情形為例進行了說明,但不限於此。例如,電漿處理裝置10亦可僅進行警報部102f之警報、及修正部102g之處理條件之修正之任一者。In addition, in the above-mentioned embodiment, the case of performing both the alarm of the alarm unit 102f and the correction of the processing condition of the correction unit 102g has been described as an example, but it is not limited to this. For example, the
又,於上述實施形態中,如圖2所示,以將靜電吸盤18之載置區域18a於徑向上以大致均等之間隔分割為4個分割區域75之情形為例進行了說明,但不限於此。例如,靜電吸盤18之載置區域18a亦可分割為於晶圓W之中心側間隔較大且於外周側間隔較小之分割區域75。圖11A係表示另一實施形態之載置台之俯視圖。於圖11A中,靜電吸盤18之載置區域18a分割為中央圓形之分割區域75a及4個環狀之分割區域75b~75e。於分割區域75a~75d配置晶圓W。於分割區域75e配置聚焦環FR。又,成為晶圓W之中心側之分割區域75a分割為寬度較大。成為晶圓W之外周側之分割區域75b~75d分割為寬度較小。又,靜電吸盤18之載置區域18a亦可於圓周方向進行分割。圖11B係表示另一實施形態之載置台之俯視圖。於圖11B中,載置區域18a分割為中央圓形之分割區域75、及包圍該圓形之分割區域75之同心狀之複數個環狀之分割區域。又,環狀之分割區域於圓周方向分割為複數個分割區域75。又,分割區域75之形狀亦可為圓狀或環狀以外之形狀。圖11C係表示另一實施形態之載置台之俯視圖。於圖11C中,載置區域18a係格子狀分割為分割區域75。In addition, in the above-mentioned embodiment, as shown in FIG. 2, a case where the mounting
又,於上述實施形態中,以對將靜電吸盤18之載置區域18a分割所得之各分割區域75獲取有關載置台16之溫度之值,監視電漿處理之處理條件之變化之情形為例進行了說明,但不限於此。例如,電漿處理裝置10亦可於靜電吸盤18之載置區域18a整體獲取一個有關載置台16之溫度之值,且根據獲取之值之變化監視電漿處理之處理條件之變化。又,電漿處理裝置10亦可對任一分割區域75獲取有關載置台16之溫度之值,且根據獲取之值之變化,監視電漿處理之處理條件之變化。Furthermore, in the above-mentioned embodiment, the case where the temperature value of the mounting table 16 is obtained for each divided
又,於上述實施形態中,作為電漿處理以進行電漿蝕刻之情形為例進行了說明,但不限於此。電漿處理若為使用電漿且因溫度而對處理之進行存在影響者,則可為任何電漿處理。In addition, in the above-mentioned embodiment, the case where plasma etching is performed as the plasma treatment is described as an example, but it is not limited to this. Plasma treatment can be any plasma treatment if it uses plasma and has an influence on the progress of the treatment due to temperature.
10:電漿處理裝置 12:處理容器 12a:接地導體 12e:排氣口 12g:搬入搬出口 14:支持部 16:載置台 18:靜電吸盤 18a:載置區域 19:接著層 20:基台 22:直流電源 24:冷媒流路 26a:配管 30:上部電極 32:絕緣性屏蔽構件 34:電極板 34a:氣體噴出孔 36:電極支持體 36a:氣體擴散室 36b:氣流通孔 36c:氣體導入口 38:氣體供給管 40:氣源群 42:閥群 44:流量控制器群 46:積存物遮罩 48:排氣板 50:排氣裝置 52:排氣管 54:閘閥 75:分割區域 75a:分割區域 75b:分割區域 75c:分割區域 75d:分割區域 75e:分割區域 100:控制部 101:外部介面 102:程序控制器 102a:加熱器控制部 102b:第1獲取部 102c:第2獲取部 102d:設定溫度運算部 102e:監視部 102f:警報部 102g:修正部 103:使用者介面 104:記憶部 104a:變化資訊 E1:電極 FR:聚焦環 HFS:第1高頻電源 HP:加熱器電源 HT:加熱器 LFS:第2高頻電源 MU1:匹配器 MU2:匹配器 PD:電力檢測部 S:處理空間 S10~S16:步驟 S20~S26:步驟 SW1:開關 TD:溫度測定器 W:晶圓10: Plasma processing device 12: Disposal of the container 12a: Ground conductor 12e: exhaust port 12g: Move in and out 14: Support Department 16: Mounting table 18: Electrostatic chuck 18a: Placement area 19: Next layer 20: Abutment 22: DC power supply 24: refrigerant flow path 26a: Piping 30: Upper electrode 32: insulating shielding member 34: Electrode plate 34a: Gas ejection hole 36: Electrode support 36a: Gas diffusion chamber 36b: Air flow through hole 36c: Gas inlet 38: Gas supply pipe 40: Air Source Group 42: valve group 44: Flow Controller Group 46: accumulation mask 48: exhaust plate 50: Exhaust device 52: exhaust pipe 54: Gate valve 75: Split area 75a: segmentation area 75b: segmentation area 75c: segmentation area 75d: segmentation area 75e: split area 100: Control Department 101: External interface 102: Program Controller 102a: Heater control unit 102b: The first acquisition part 102c: The second acquisition part 102d: Set temperature calculation unit 102e: Monitoring Department 102f: Alarm Department 102g: correction part 103: User Interface 104: Memory Department 104a: Change information E1: Electrode FR: Focus ring HFS: 1st high frequency power supply HP: heater power supply HT: heater LFS: 2nd high frequency power supply MU1: matcher MU2: matcher PD: Power Detection Department S: processing space S10~S16: steps S20~S26: steps SW1: switch TD: Thermometer W: Wafer
圖1係概略性地表示實施形態之電漿處理裝置之圖。 圖2係表示實施形態之載置台之俯視圖。 圖3係表示控制實施形態之電漿處理裝置之控制部之概略構成之方塊圖。 圖4係模式性地表示對晶圓之溫度造成影響之能量之流動之圖。 圖5A係模式性地表示未點火狀態之能量之流動之圖。 圖5B係模式性地表示點火狀態之能量之流動之圖。 圖6(A)、(B)係表示晶圓之溫度及對加熱器之供給電力之變化之一例之圖。 圖7係模式性地表示點火狀態之能量之流動之圖。 圖8A係表示上部電極、及積存物遮罩之溫度變化之情形時來自加熱器之發熱量之變化之一例之圖。 圖8B係表示高頻電力HFS、高頻電力LFS變化之情形時來自加熱器之發熱量之變化之一例之圖。 圖8C係表示處理容器內之壓力變化之情形時來自加熱器之發熱量之變化之一例之圖。 圖8D係表示傳熱氣體之壓力、晶圓W之背面膜厚變化之情形時之熱阻之變化之一例之圖。 圖9係表示實施形態之產生處理之流程之一例之流程圖。 圖10係表示實施形態之監視處理之流程之一例之流程圖。 圖11A係表示另一實施形態之載置台之俯視圖。 圖11B係表示另一實施形態之載置台之俯視圖。 圖11C係表示另一實施形態之載置台之俯視圖。Fig. 1 is a diagram schematically showing the plasma processing apparatus of the embodiment. Fig. 2 is a plan view showing the mounting table of the embodiment. Fig. 3 is a block diagram showing a schematic configuration of a control section of the plasma processing apparatus of the control embodiment. Fig. 4 is a diagram schematically showing the flow of energy that affects the temperature of the wafer. Fig. 5A is a diagram schematically showing the flow of energy in the unfired state. Fig. 5B is a diagram schematically showing the flow of energy in the ignition state. 6(A) and (B) are diagrams showing an example of changes in the temperature of the wafer and the power supply to the heater. Fig. 7 is a diagram schematically showing the flow of energy in the ignition state. Fig. 8A is a diagram showing an example of the change in the amount of heat generated from the heater when the temperature of the upper electrode and the deposit mask changes. FIG. 8B is a diagram showing an example of the change in the amount of heat from the heater when the high-frequency power HFS and the high-frequency power LFS change. Fig. 8C is a diagram showing an example of the change in the amount of heat from the heater when the pressure in the processing container changes. FIG. 8D is a diagram showing an example of the change of the thermal resistance when the pressure of the heat transfer gas and the film thickness of the back surface of the wafer W change. Fig. 9 is a flowchart showing an example of the flow of generation processing in the embodiment. Fig. 10 is a flowchart showing an example of the flow of monitoring processing in the embodiment. Fig. 11A is a plan view showing another embodiment of the mounting table. Fig. 11B is a plan view showing a mounting table of another embodiment. Fig. 11C is a plan view showing a mounting table of another embodiment.
100:控制部 100: Control Department
101:外部介面 101: External interface
102:程序控制器 102: Program Controller
102a:加熱器控制部 102a: Heater control unit
102b:第1獲取部 102b: The first acquisition part
102c:第2獲取部 102c: The second acquisition part
102d:設定溫度運算部 102d: Set temperature calculation unit
102e:監視部 102e: Monitoring Department
102f:警報部 102f: Alarm Department
102g:修正部 102g: correction part
103:使用者介面 103: User Interface
104:記憶部 104: Memory Department
104a:變化資訊 104a: Change information
HP:加熱器電源 HP: heater power supply
PD:電力檢測部 PD: Power Detection Department
TD:溫度測定器 TD: Thermometer
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