TW202018108A - Three dimension revolution and rotation deposition turntable structure - Google Patents
Three dimension revolution and rotation deposition turntable structure Download PDFInfo
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本發明為一種3D蒸鍍之公自轉鍍鍋結構,特別為一種應用半導體晶圓片蒸鍍之3D蒸鍍之公自轉鍍鍋結構。The present invention is a 3D vaporization public rotation plating pot structure, in particular a 3D vaporization public rotation plating pot structure using semiconductor wafer evaporation.
中華民國專利公告第00470215號(以下簡稱215號專利),揭露了一種公自轉式晶圓承載器之固定結構,其主要揭露了公轉架及可旋轉的晶圓承載器P13,然而其存在著下列問題: 一、 僅僅只有2旋轉軸P110,P120之旋轉,蒸鍍時晶圓片無法自轉,將產生方向性造成陰影以致膜厚不一致的問題。 二、 晶圓承載器P13必須藉由軸桿AP131之驅動而旋轉,而軸桿AP131再加上必須隨之旋轉的驅動單元,將使的設備的體積增加。 三、 整個晶圓承載器P13必須藉由滾輪P112支撐,且滾輪P112兩側的配種完全不成比例,將造成旋轉結構不穩定及容易損壞。Republic of China Patent Announcement No. 00470215 (hereinafter referred to as Patent No. 215), discloses a fixed structure of a self-rotating wafer carrier, which mainly discloses a revolving frame and a rotatable wafer carrier P13, however, there are the following Questions: 1. There are only two rotation axes P110 and P120, and the wafers cannot rotate during evaporation, which will cause the problem of directivity causing shadows and inconsistent film thickness. 2. The wafer carrier P13 must be rotated by the shaft AP131, and the shaft AP131 plus the drive unit that must rotate with it will increase the volume of the equipment. 3. The entire wafer carrier P13 must be supported by the roller P112, and the two sides of the roller P112 are completely disproportionate, which will cause the rotating structure to be unstable and easily damaged.
中華民國專利公告第M316262號(以下簡稱262號專利),揭露了一種真空蒸鍍機的被鍍物承載裝置,其雖然揭露了3旋轉軸旋轉P120,P120,P130之旋轉架、可旋轉的承載盤及可旋轉的旋轉體,然而其存在著下列的問題: 一、 所有承載盤P14都藉由第一支桿P12提供懸吊支撐,將使得驅動軸B1要承受所有的結構支撐力,加上驅動軸B1還要經常性的旋轉,因此容易產生高故障率。 二、 承載盤P14僅以第一支桿P12採用懸吊支撐,使得承載盤P14旋轉時,容易搖晃抖動,因此影響鍍膜品質。 三、 旋轉體P15藉由突桿P152被延伸桿P131撥動而轉動,這樣的結構行為,將容易使旋轉體P15上的晶圓片被過度震動,除了容易造成晶圓片的損傷外,也容易讓晶圓片在突然震動的情況下而墜落。 四、 旋轉體P15轉動時,將使晶圓片由上面直接跳躍式翻轉至下面,並非線性轉動,因此將嚴重影響鍍膜均勻性。Republic of China Patent Announcement No. M316262 (hereinafter referred to as Patent No. 262), which discloses a plated object carrying device of a vacuum evaporation machine, although it discloses a three-axis rotary shaft rotating P120, P120, P130 rotating frame, rotatable bearing The disk and the rotatable rotating body, however, have the following problems: 1. All bearing disks P14 are provided with suspension support by the first supporting rod P12, which will make the drive shaft B1 bear all the structural support forces, plus The drive shaft B1 also rotates frequently, so it is prone to a high failure rate. 2. The bearing plate P14 is only suspended and supported by the first supporting rod P12, so that when the bearing plate P14 rotates, it is easy to shake and jitter, thus affecting the coating quality. 3. The rotating body P15 is rotated by the protruding rod P152 being pulled by the extension rod P131. Such a structural behavior will easily cause the wafer on the rotating body P15 to be excessively vibrated. In addition to easily causing damage to the wafer, It is easy for the wafer to fall under sudden vibration. 4. When the rotating body P15 rotates, it will make the wafer jump from the top to the bottom directly and rotate non-linearly, so it will seriously affect the uniformity of the coating.
此外、隨著半導體製程技術的不斷提升,目前製作在晶圓片上的電子元件,有許多已經具有更複雜的三維(3D)結構,因為三維結構將從不同角度都會產生許多不同的陰影,而上述的蒸鍍機,無法有效克服三維電子元件421蒸鍍製程上陰影的問題,也就是階梯覆蓋不佳的問題。In addition, with the continuous improvement of semiconductor process technology, many electronic components currently fabricated on wafers already have more complex three-dimensional (3D) structures, because three-dimensional structures will produce many different shadows from different angles. The vapor deposition machine cannot effectively overcome the shadow problem on the vapor deposition process of the three-dimensional
本發明為一種3D蒸鍍之公自轉鍍鍋結構,其主要係要解決鍍鍋對晶圓片進行蒸鍍時,鍍鍋結構支撐不穩、無法提供線性運作、蒸鍍角設計不佳導致鍍膜厚度均勻性不佳、階梯覆蓋(Step Coverage)差、及鍍膜結構不一致的問題。The present invention is a 3D vapor deposition public rotation plating pot structure, which mainly aims to solve the problem that when the plating pot performs vapor deposition on the wafer, the plating pot structure is not stable, cannot provide linear operation, and the design of the evaporation angle is poor, resulting in coating Poor thickness uniformity, poor step coverage, and inconsistent coating structure.
本發明提供一種3D蒸鍍之公自轉鍍鍋結構,其包括:一公轉底盤,其為一圓形環繞軌道;一公轉頂盤,其具有複數個支撐件,每一支撐件底部藉由一公轉轉輪,環繞運行於公轉底盤;複數個鍍鍋自轉模組,每一鍍鍋自轉模組包括:一懸臂,其以一傾斜角結合於公轉頂盤;一齒輪盤,其結合於懸臂之底側,齒輪盤形成有一內環狀齒牙;及一自轉鍍盤,其藉由一轉軸結合於懸臂,又自轉鍍盤之端部,係環繞線性運轉於公轉底盤;以及複數個晶圓載盤,每一晶圓載盤藉由一轉軸固設於一自轉鍍盤上,又藉由每一晶圓載盤之一外環狀齒牙與內環狀齒牙產生線性平穩轉動結合。The invention provides a 3D vaporization male rotation plating pot structure, which includes: a revolution bottom plate, which is a circular surrounding track; a revolution top plate, which has a plurality of support pieces, and the bottom of each support piece is rotated by a revolution The runner runs around the revolution chassis; a plurality of plating pan rotation modules, each plating pan rotation module includes: a cantilever, which is coupled to the revolving top plate at an inclined angle; and a gear plate, which is coupled to the bottom of the cantilever On the side, the gear plate is formed with an inner ring-shaped tooth; and a rotation plating plate, which is coupled to the cantilever by a rotating shaft, and the end of the rotation plating plate, runs linearly around the revolution chassis; and a plurality of wafer carrier plates, Each wafer carrier is fixed on a self-rotating plating disc by a rotating shaft, and a linear and stable rotation combination is generated by an outer ring tooth and an inner ring tooth of each wafer carrier.
藉由本發明之實施,至少可以達成下列之進步功效: 一、 可以提升鍍鍋對晶圓片進行蒸鍍時,因蒸鍍角設計導致鍍膜厚度均勻性更佳。 二、 所有公轉及自轉都能以線性平穩的方式運作,且晶圓載盤可線性自轉。 三、 藉由晶圓載盤線性平穩自轉,可提升階梯覆蓋狀態及使鍍膜結構一致。 四、 藉由上下支撐,提供穩固的結構支撐。Through the implementation of the present invention, at least the following improved effects can be achieved: 1. It can increase the thickness of the coating film due to the design of the evaporation angle when the plating pot is used for vapor deposition of the wafer. 2. All revolutions and rotations can operate in a linear and stable manner, and the wafer carrier can rotate linearly. 3. The linear and smooth rotation of the wafer carrier can improve the step coverage and make the coating structure consistent. Fourth, by supporting up and down, provide a solid structural support.
為了使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易的理解本發明相關之目的及優點,因此將在實施方式中詳細敘述本發明之詳細特徵以及優點。In order to let any person skilled in the art understand the technical content of the present invention and implement it accordingly, and according to the content, patent application scope and drawings disclosed in this specification, any person skilled in the art can easily understand the purpose and advantages related to the present invention Therefore, the detailed features and advantages of the present invention will be described in detail in the embodiments.
如第2圖至第4圖所示,本實施例為一種3D蒸鍍之公自轉鍍鍋結構100,其包括:一公轉底盤10;一公轉頂盤20;複數個鍍鍋自轉模組30;以及複數個晶圓載盤40。As shown in FIGS. 2 to 4, this embodiment is a 3D vaporized male rotation
公轉底盤10,作為整個公自轉鍍鍋結構100之底部支撐,又為了能達成旋轉之功效,公轉底盤10可以為一圓形環繞軌道。The revolving
公轉頂盤20,其具有複數個支撐件210使公轉頂盤20能架設在公轉底盤10上。又為了使公轉頂盤20有效的旋轉,因此在每一支撐件210底部可以設置一公轉轉輪220。藉由公轉轉輪220可以使公轉頂盤20順暢的環繞運行於公轉底盤10上。The revolving
為了使公轉頂盤20能以最簡單又最穩固的方式設置於公轉底盤10上,因此複數個支撐件210可以為三個支撐件210,又每一支撐件210彼此係以等間距方式排列,藉此可以形成三足鼎立之結構。In order to allow the revolving
又為了使3D蒸鍍之公自轉鍍鍋結構100能規律的運轉,因此公轉底盤10與公轉頂盤20彼此係為相互平行之結構,而且公轉底盤10與公轉頂盤20均以水平狀態設置。In addition, in order to enable the 3D vapor deposition revolution
如第5圖所示,複數個鍍鍋自轉模組30,每一鍍鍋自轉模組30包括: 一懸臂310;一齒輪盤320;及一自轉鍍盤330。上述之複數個鍍鍋自轉模組30,係可以為三個鍍鍋自轉模組30,且彼此以等間距相互對稱之方式排列。As shown in FIG. 5, a plurality of plating
如第6圖所示,懸臂310,係以一傾斜角結合於公轉頂盤20。懸臂310主要用以支撐齒輪盤320及自轉鍍盤330。為了因應蒸鍍時,不同的產品有不同傾斜角的需求,因此懸臂310係可設計成藉由一角度調整器50與公轉頂盤20結合。As shown in FIG. 6, the
上述之角度調整器50,可以包括一第一角度調整單元510及一第二角度調整單元520,藉由第一角度調整單元510及第二角度調整單元520的使用,可以對蒸鍍角θ產生不同角度的微調。The above-mentioned
本實施例係將自轉鍍盤330與公轉頂盤20所形的18度夾角定義為一基準角度X。上述之第一角度調整單元510之調整角度可以為基準角度之+3、+1、-1或-3度。又第二角度調整單元520之調整角度可以為基準角度之+2、0、或-2度。In this embodiment, the 18-degree angle formed by the
齒輪盤320,其係固定結合於懸臂310之底側,齒輪盤320內具有一圓形開口321,又圓形開口321形成有一內環狀齒牙322。齒輪盤320主要用以提供晶圓載盤40旋轉時之施力點。The
自轉鍍盤330,其為圓形盤狀結構。自轉鍍盤330之圓心係藉由一轉軸60結合於懸臂310,又自轉鍍盤330之端部,係環繞線性運轉於公轉底盤10上,此時公轉底盤10也分擔了公自轉鍍鍋結構100所需要的結構支撐力,將使得公自轉鍍鍋結構100在運作時能更為平穩。The
藉由上述之結構,當公轉頂盤20旋轉時,將帶動自轉鍍盤330移動。又自轉鍍盤330移動時,因為與公轉底盤10產生交互作用,所以在轉軸60的支撐下,自轉鍍盤330因此產生旋轉動作。With the above structure, when the revolving
複數個晶圓載盤40,每一晶圓載盤40用以承載待蒸鍍之晶圓片420或物件,又每一晶圓載盤40係藉由一轉軸60固設於自轉鍍盤330上。設置時、每一晶圓載盤40可以等間距的排列方式設置於自轉鍍盤330之同一個同心圓上,又藉由每一晶圓載盤40之一外環狀齒牙410與內環狀齒牙322產生線性平穩轉動式結合。A plurality of
藉由上述之結構,將使自轉鍍盤330旋轉時帶動每一晶圓載盤40移動。又晶圓載盤40移動時,晶圓載盤40之外環狀齒牙410將與內環狀齒牙322產生交互作用,因此在轉軸60的支撐下,將使得晶圓載盤40產生線性旋轉動作。With the above structure, each
本實施例係利用3個軸心,使鍍鍋進行公轉及自轉,藉此使晶圓片420與蒸鍍源70間產生更多位置及角度的變化,進而提升蒸鍍的均勻性、達成較佳的階梯覆蓋(Step Coverage)以及使鍍膜結構比較一致。In this embodiment, three axes are used to revolve and rotate the plating pot, thereby generating more position and angle changes between the
如第7圖及第8圖所示,關於第1軸910,其為公轉底盤10與公轉頂盤20中心點所形成的軸線;關於第2軸920,係指自轉鍍盤330其轉軸60之中心線;關於第3軸930,其係為晶圓載盤40其轉軸60之中心線。As shown in FIGS. 7 and 8, the
運作時,在馬達的驅動下,公自轉鍍鍋結構100沿著第1軸910進行公轉,此時自轉鍍盤330及晶圓載盤40也將隨著公轉;在自轉鍍盤33公轉的同時,自轉鍍盤33也會沿著第2軸920進行自轉;又自轉鍍盤330自轉時也將帶動晶圓載盤40沿著第3軸930自轉。During operation, under the drive of the motor, the autorotation and
由於上述的公、自轉都是以線性方式進行,晶圓載盤40自轉時又搭配自轉鍍盤330自轉,可以讓晶圓片420與蒸鍍源70的角度出現多樣的變化,除了可以改善晶圓片420中心與邊緣的蒸鍍角θ差異,使三維電子元件421蒸鍍的均勻性及階梯覆蓋(Step Coverage) 提升外,也能以動態的方式克服三維電子元件421因為立體圖案結構產生陰影,同時能增加鍍膜的均勻性進而使鍍膜結構更為一致。Since the above-mentioned male and female rotations are performed in a linear manner, the
當蒸鍍角θ不同,鍍膜厚度將使鍍膜的結構產生差異,因此在蒸鍍角θ度的設計,係可大於或等於70度,又有關蒸鍍角θ度的定義,係指晶圓載盤40表面與一蒸鍍角射線940所形成之夾角,又蒸鍍角射線940係蒸鍍源70與晶圓載盤40之一載盤邊緣所形成的直線。When the vapor deposition angle θ is different, the thickness of the coating will make the structure of the coating film different. Therefore, the design of the vapor deposition angle θ degree can be greater than or equal to 70 degrees, and the definition of the vapor deposition angle θ degree refers to the wafer carrier The angle formed by the surface of 40 and an
為了達成較佳的階梯覆蓋,任一晶圓載盤40其最大之蒸鍍角θ度與最小之蒸鍍角θ度之角度差,係可設計成大於或等於10度。有關上述的蒸鍍角θ又依照不同產品的需求,可以藉由第一角度調整單元510或第二角度調整單元520進行微調。In order to achieve better step coverage, the difference between the maximum vapor deposition angle θ degrees and the minimum vapor deposition angle θ degrees of any
惟上述各實施例係用以說明本發明之特點,其目的在使熟習該技術者能瞭解本發明之內容並據以實施,而非限定本創作之專利範圍,故凡其他未脫離本發明所揭示之精神而完成之等效修飾或修改,仍應包含在以下所述之申請專利範圍中。However, the above embodiments are used to illustrate the characteristics of the present invention, and its purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly, rather than limiting the scope of the patent of this creation, so any other The equivalent modification or modification done by the spirit of disclosure should still be included in the scope of the patent application described below.
B1:驅動軸P112:滾輪P12:第一支桿P120,P120:旋轉軸P130:旋轉軸P13:晶圓承載器AP131:軸桿P131:延伸桿P14:承載盤P15:旋轉體P152:突桿100:3D蒸鍍之公自轉鍍鍋結構10:公轉底盤20:公轉頂盤210:支撐件220:公轉轉輪30:鍍鍋自轉模組310:懸臂320:齒輪盤321:圓形開口322:內環狀齒牙330:自轉鍍盤40:晶圓載盤410:外環狀齒牙420:晶圓片421:三維電子元件50:角度調整器510:第一角度調整單元520:第二角度調整單元60:轉軸70:蒸鍍源910:第1軸920:第2軸930:第3軸940:蒸鍍角射線θ:蒸鍍角X:基準角度B1: Drive shaft P112: Roller P12: First supporting rod P120, P120: Rotating axis P130: Rotating axis P13: Wafer carrier AP131: Shaft P131: Extension rod P14: Carrier plate P15: Rotating body P152: Protruding rod 100 : 3D vaporization of the public rotation plating pot structure 10: revolution chassis 20: revolution top plate 210: support 220: revolution runner 30: plating pot rotation module 310: cantilever 320: gear plate 321: circular opening 322: inner Ring tooth 330: Rotary plating plate 40: Wafer carrier 410: Outer ring tooth 420: Wafer 421: Three-dimensional electronic component 50: Angle adjuster 510: First angle adjustment unit 520: Second angle adjustment unit 60: Rotation axis 70: Vapor deposition source 910: 1st axis 920: 2nd axis 930: 3rd axis 940: Vapor deposition angle θ: Vapor deposition angle X: Reference angle
[第1圖]為習知之一種公自轉式晶圓承載器之固定結構圖; [第2圖] 為習知之一種真空蒸鍍機的被鍍物承載裝置圖; [第3圖]為一種具有本發明3D蒸鍍之公自轉鍍鍋結構之蒸鍍機實施例圖; [第4圖]為本發明之一種3D蒸鍍之公自轉鍍鍋結構實施例圖; [第5圖]為本發明之一種鍍鍋自轉模組實施例圖; [第6圖]為本發明之一種角度調整器運作及局部放大實施例圖; [第7圖]為本發明之第1軸、第2軸、及第3軸位置實施例圖;以及 [第8圖]為三維電子元件在晶圓載盤及自轉鍍盤上之位置關係實施例圖。[Picture 1] is a fixed structure diagram of a conventional self-rotating wafer carrier; [Picture 2] is a diagram of a conventional object carrier device of a vacuum evaporation machine; [Picture 3] is a kind of The embodiment of the present invention is a 3D vapor deposition male rotation plating pot structure of the embodiment of the evaporation machine; [Figure 4] is a 3D vapor deposition male rotation plating pot structure embodiment of the invention; [Figure 5] is the invention A diagram of an embodiment of a plating pan rotation module; [Figure 6] is a diagram of an embodiment of the operation and partial enlargement of an angle adjuster of the present invention; [Figure 7] is the first axis, second axis, and Embodiment diagram of the third axis position; and [Figure 8] is an embodiment diagram of the positional relationship of the three-dimensional electronic components on the wafer carrier plate and the spin plating plate.
100:3D蒸鍍之公自轉鍍鍋結構 100: 3D vapor deposition male rotation plating pot structure
10:公轉底盤 10: Revolving chassis
20:公轉頂盤 20: Revolving top plate
210:支撐件 210: support
220:公轉轉輪 220: revolution runner
30:鍍鍋自轉模組 30: Rotating module for plating pan
310:懸臂 310: cantilever
320:齒輪盤 320: gear plate
321:圓形開口 321: round opening
322:內環狀齒牙 322: Internal ring teeth
330:自轉鍍盤 330: Rotating plated plate
40:晶圓載盤 40: Wafer carrier
410:外環狀齒牙 410: outer ring teeth
420:晶圓片 420: Wafer
60:轉軸 60: shaft
Claims (10)
Priority Applications (1)
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TW107140205A TWI664305B (en) | 2018-11-13 | 2018-11-13 | Three dimension revolution and rotation deposition turntable structure |
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TW107140205A TWI664305B (en) | 2018-11-13 | 2018-11-13 | Three dimension revolution and rotation deposition turntable structure |
Publications (2)
Publication Number | Publication Date |
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TWI664305B TWI664305B (en) | 2019-07-01 |
TW202018108A true TW202018108A (en) | 2020-05-16 |
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CN115110038B (en) * | 2022-06-29 | 2024-01-12 | 北海惠科半导体科技有限公司 | Evaporation coating device and coating method |
CN115449754A (en) * | 2022-09-02 | 2022-12-09 | 南通越亚半导体有限公司 | Evaporation rack and evaporation device |
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TW470215U (en) * | 2001-01-03 | 2001-12-21 | Mosel Vitelic Inc | Fixing structure of planetary-rotation type wafer carrier |
TWM316262U (en) * | 2007-01-29 | 2007-08-01 | Highlight Optoelectronics Inc | The loading device for plated article of Vacuum Evaporator |
KR20120065841A (en) * | 2010-12-13 | 2012-06-21 | 삼성전자주식회사 | Substrate support unit, and apparatus for depositing thin layer using the same |
TWM509808U (en) * | 2015-04-10 | 2015-10-01 | Junsun Tech Co Ltd | Angled-adjustable coating apparatus |
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