TW201937730A - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
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- TW201937730A TW201937730A TW107114999A TW107114999A TW201937730A TW 201937730 A TW201937730 A TW 201937730A TW 107114999 A TW107114999 A TW 107114999A TW 107114999 A TW107114999 A TW 107114999A TW 201937730 A TW201937730 A TW 201937730A
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- Prior art keywords
- layer
- nitride semiconductor
- semiconductor layer
- semiconductor device
- source electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 150000004767 nitrides Chemical class 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052738 indium Inorganic materials 0.000 claims abstract description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 136
- 239000011241 protective layer Substances 0.000 claims description 11
- 229910002601 GaN Inorganic materials 0.000 description 25
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 24
- 229910002704 AlGaN Inorganic materials 0.000 description 23
- 238000000034 method Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000010030 laminating Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
一種半導體裝置,具備:基板、被形成於前述基板上的第1氮化物半導體層、被形成於前述第1氮化物半導體層上,含有鎵元素的第2氮化物半導體層、於前述第2氮化物半導體層上,與前述第2氮化物半導體層接觸而形成的源極電極及汲極電極,被形成於前述第2氮化物半導體層之上,含有銦元素與鋁元素的第3氮化物半導體層、以及於前述第3氮化物半導體層之上,被形成於前述源極電極及汲極電極之間的閘極電極。
Description
本發明之實施型態係關於半導體裝置。
於使用在通訊或雷達等的大電力用氮化鎵系半導體裝置,藉著於被形成在Si、SiC或藍寶石的基板上之GaN通道層以及AlGaN障壁層之上,形成被稱為InAlN帽蓋層或InAlGaN帽蓋層之層,可以使表面狀態安定,提高電流崩潰的抑制等元件特性。但是,有InAlN帽蓋層或InAlGaN帽蓋層的話,形成歐姆電極時要降低接觸電阻是困難的。
[發明所欲解決之課題]
本發明之實施型態,於使用在通訊或雷達等的大電力用氮化鎵系半導體裝置,提供高性能的元件。 [供解決課題之手段]
實施型態的半導體裝置,具備:基板、被形成於前述基板上的第1氮化物半導體層、被形成於前述第1氮化物半導體層上,含有鎵元素的第2氮化物半導體層、於前述第2氮化物半導體層上,與前述第2氮化物半導體層接觸而形成的源極電極及汲極電極,被形成於前述第2氮化物半導體層之上,含有銦元素與鋁元素的第3氮化物半導體層、以及於前述第3氮化物半導體層之上,被形成於前述源極電極及汲極電極之間的閘極電極。
根據前述半導體裝置,可以提供高性能的大電力用氮化鎵系半導體裝置。
(第1實施型態) 以下,參照圖式,說明相關於本實施型態之半導體裝置。
圖1係第1實施形態之半導體裝置100之剖面圖。於基板10上被形成作為通道層之氮化鎵層(GaN層、第1氮化物半導體層)20。於GaN層20上被形成作為障壁層之氮化鋁鎵層(AlGaN層、第2氮化物半導體層)30。進而於氮化鋁鎵層30上被形成作為帽蓋層之氮化銦鋁鎵層(InAlGaN層、第3氮化物半導體層)40。帽蓋層亦可為InAlN層。亦即,作為帽蓋層之第3氮化物半導體層40,為含有銦元素與鋁元素之氮化物半導體層。
於AlGaN層30上,源極電極50與汲極電極51隔著第1間隔而形成。此外,此源極電極50與汲極電極51之間,於InAlGaN層40上被形成閘極電極52。閘極電極52與源極電極50之間被形成第2間隔,此外,閘極電極52與汲極電極51之間被形成第3間隔。源極電極50的側面與InAlGaN層40相接,此外,汲極電極51的側面與InAlGaN層40相接。
進而,InAlGaN層40、源極電極50、汲極電極51、及閘極電極52之上,以覆蓋全體的方式形成保護層60。
基板10,使用矽(Si)、碳化矽(SiC)、藍寶石、氮化鎵(GaN)、鑽石等。但是於本實施型態,基板10的材料並不以這些為限。
GaN層20、AlGaN層30及InAlGaN層40為氮化物半導體。於本實施型態,這些層係組合鋁(Al)、鎵(Ga)、銦(In)等之III族元素與氮(N)之V族元素而成的III-V族半導體。
GaN與矽相比能帶間隙大,耐電壓性優異,所以用於可施加高電壓的大電力用功率元件。進而,GaN的飽和電子速度比矽還大,電子移動度與矽同等,所以GaN也作為微波用的高頻半導體裝置使用。
GaN層20(第1氮化物半導體層)與AlGaN層30(第2氮化物半導體層)係組合晶格間距離相近者而形成。
GaN層20與AlGaN層30分別的能帶間隙不相同。GaN層20與AlGaN層30接合時,接合面(異質界面)的附近被形成能態的量子阱,電子以高密度蓄積於量子阱,形成2次元電子氣體(2 Dimensional Electron Gas、2DEG)31。
InAlGaN層40,覆蓋AlGaN層30的上端,終結AlGaN層30表面的懸鍵(dangling bond)。亦即,InAlGaN層40,防止在AlGaN層30的表面形成阱能階(trap level),抑制半導體裝置100的特性劣化。
源極電極50與汲極電極51設於AlGaN層30之上,各電極50、51歐姆接觸於AlGaN層30。閘極電極52設於InAlGaN層40之上,閘極電極52肖特基 (Schottky)接觸於InAlGaN層40。形成歐姆電極之源極電極50與汲極電極51時,藉著蝕刻能帶間隙大的InAlGaN層40,於AlGaN層30上設源極電極50與汲極電極51,可以形成良好的歐姆接觸。
保護層60係以氮化膜等構成。氮化膜例如可以舉出氮化矽(SiN)等。保護層60,具有藉著覆蓋各電極而保護各電極不受水分等影響的任務。
使用圖2A~圖2D說明本實施型態之半導體裝置100的製造方法。在半導體裝置100,於基板10上藉由MOCVD(Metal Organic Chemical Vapor Deposition,金屬有機化學氣相沈積)法等使GaN結晶成長,於基板10上層積GaN層20。MOCVD法係把有機金屬與運載氣體供給至加熱的基板10上,藉由在基板10上使產生氣相的化學反應,於基板10上磊晶成長半導體層之方法。
於基板10上層積GaN層20後,藉由把有機金屬原料之三甲基鋁(TMA)、三甲基鎵(TMG)以及氨氣與運載氣體(氮或氫)一起供給,使其反應而在GaN層20上層積AlGaN層30。
於GaN層20上層積AlGaN層30後,同樣地藉由供給TMA、TMG、三甲基銦(TMI)與氨氣、運載氣體,使其反應而在AlGaN層30上層積InAlGaN層40(圖2A)。
但是,MOCVD法只是這些氮化物半導體層的層積方法之一例,於本實施型態,氮化物半導體層的層積方法不限於MOCVD法。
層積InAlGaN層40之後,藉由蝕刻處理除去一部分層積的InAlGaN層40(圖2B)。蝕刻方法例如使用感應耦合型反應性離子蝕刻(Inductivity Coupled Plasama ReactiveIon Etching:ICR-RIE)。在除去InAlGaN層40的部分於AlGaN層30上形成源極電極50與汲極電極51,此外,於InAlGaN層40上被形成閘極電極52。電極50、51、52,藉由熱處理(合金處理)供作成這些電極而設的金屬層而形成(圖2C)。
其後,於InAlGaN層40、各電極50、51、52之上以電漿化學氣相沉積(Plasma-enhanced Chemical Vapor Deposition)法等層積保護層60(圖2D)。但是,電漿CVD法只是這些保護層60的層積方法之一例,於本實施型態,保護層60的層積方法不限於電漿CVD法。
(第2實施形態) 圖3係第2實施型態之半導體裝置200之圖。
在第1實施型態,源極電極50及汲極電極51分別的側面與InAlGaN層40相接,但在第2實施形態,源極電極50與汲極電極51,不與InAlGaN層40接觸(非接觸)。總之,源極電極50與汲極電極51,係離開InAlGaN層40而配置的。
使用圖4A~圖4D說明第2實施型態之製造方法。首先,於基板10上層積GaN層20、AlGaN層30、InAlGaN層40。層積各層的步驟(圖4A)與第1實施型態相同,所以省略說明。
其次,為了形成源極電極50及汲極電極51藉由蝕刻處理把InAlGaN層除去一部分(圖4B)。
接著,形成源極電極50、汲極電極51、及閘極電極52。源極電極50與汲極電極51被形成於AlGaN層30上,閘極電極52被形成於InAlGaN層40上(圖4C)。源極電極50與汲極電極51以不與InAlGaN層40接觸的方式形成。
最後,以覆蓋InAlGaN40、AlGaN層30、源極電極50、汲極電極51、閘極電極52的方式,層積保護層60(圖4D)。又,蝕刻方法及層積保護層60的方法與第1實施型態相同。
在第2實施形態,源極電極50與汲極電極51亦可被形成在比對InAlGaN層40施以蝕刻的部分更窄的範圍,第2實施型態之半導體裝置200與第1實施型態之半導體裝置100相比為更容易製造的構造。亦即,第2實施形態與第1實施型態相比,具有提高製造性的優點。
又,在圖3及圖4C~圖4D,源極電極50與汲極電極51以不與InAlGaN層40相接的方式設置。但是,本實施型態之半導體裝置,不限定於這些完全不接觸的半導體裝置,也包含這些有一部分接觸的半導體裝置。例如,亦可以是源極電極50或汲極電極51的側面之至少一部分,與InAlGaN層40接觸的半導體裝置。
(第3實施形態) 圖5係第3實施型態之半導體裝置300之圖。
在第3實施型態,源極電極50與汲極電極51覆蓋InAlGaN層40的一部分。
使用圖6A~圖6D說明第3實施型態之製造方法。首先,於基板10上層積GaN層20、AlGaN層30、InAlGaN層40。層積各層的步驟(圖6A)與第1實施型態相同,所以省略說明。
其次,為了形成源極電極50及汲極電極51,僅形成源極電極50及汲極電極51的部分,藉由蝕刻處理把InAlGaN層40除去一部分(圖6B)。
接著,形成源極電極50、汲極電極51及閘極電極52。源極電極50與汲極電極51被形成於AlGaN層30上,閘極電極52被形成於InAlGaN層40上。此時,源極電極50與汲極電極51,以覆蓋InAlGaN層40的一部分的方式形成(圖6C)。
最後,以覆蓋InAlGaN40、源極電極50、汲極電極51、閘極電極52的方式,層積保護層60(圖6D)。
又,蝕刻處理的方法及層積保護層60的方法,與第1實施型態相同。
在第3實施形態,源極電極50與汲極電極51只要被形成在比對InAlGaN層40施以蝕刻的部分更寬的範圍即可,與第2實施型態同樣,第3實施型態之半導體裝置200與第1實施型態之半導體裝置相比為更容易製造的構造。此外,第3實施形態,源極電極50與汲極電極51與InAlGaN層40相接地形成,抑制電流崩潰的發生的緣故,可期待與第1實施型態同等的性能。
又,源極電極50與汲極電極51之分別的先端(覆蓋InAlGaN層40的部分)之形狀,沒有必要與圖5及圖6C~圖6D所示的形狀相同。
又,說明了數個實施型態,但對於InAlGaN層40之源極電極50與汲極電極51的位置或形狀並不以此為限,例如,源極電極50與汲極電極51為不同的實施型態亦可,也可以是一個電極為不同的實施型態的組合。
此外,說明了幾個實施形態,但這些實施形態只是提示作為例子之用,並未意圖限定發明的範圍。這些新穎的實施形態,能夠以其他種種形態來實施,在不逸脫發明要旨的範圍,可以進行種種的省略、置換、變更。這些實施形態或其變形,包含於發明的範圍或是要旨,而且包含於申請專利範圍所記載的發明以及其均等的範圍。
10‧‧‧基板
20‧‧‧GaN層(第1氮化物半導體層)
30‧‧‧AlGaN層(第2氮化物半導體層)
31‧‧‧2次元電子氣體(2 Dimensional Electron Gas、2DEG)
40‧‧‧InAlGaN層(第3氮化物半導體層)
50‧‧‧源極電極
51‧‧‧汲極電極
52‧‧‧閘極電極
100‧‧‧第1實施型態之半導體裝置
200‧‧‧第2實施型態之半導體裝置
300‧‧‧第3實施型態之半導體裝置
圖1係相關於第1實施型態的半導體裝置之剖面圖。 圖2A、圖2B、圖2C、圖2D係顯示相關於第1實施形態之半導體裝置之製造方法之圖。 圖3係例示相關於第2實施型態的半導體裝置之剖面圖。 圖4A、圖4B、圖4C、圖4D係顯示相關於第2實施形態之半導體裝置之製造方法之圖。 圖5係相關於第3實施型態的半導體裝置之剖面圖。 圖6A、圖6B、圖6C、圖6D係顯示相關於第3實施形態之半導體裝置之製造方法之圖。
Claims (10)
- 一種半導體裝置,其特徵為具備: 基板、 被形成於前述基板上的第1氮化物半導體層、 被形成於前述第1氮化物半導體層上,含有鎵元素的第2氮化物半導體層、 於前述第2氮化物半導體層上,與前述第2氮化物半導體層接觸而形成的源極電極及汲極電極, 被形成於前述第2氮化物半導體層之上,含有銦元素與鋁元素的第3氮化物半導體層、以及 於前述第3氮化物半導體層之上,被形成於前述源極電極及汲極電極之間的閘極電極。
- 如申請專利範圍第1項之半導體裝置,其中 前述源極電極或前述汲極電極之側面的至少一部分,與前述第3氮化物半導體層接觸。
- 如申請專利範圍第1項之半導體裝置,其中 前述源極電極或前述汲極電極之側面與前述第3氮化物半導體層為未接觸。
- 如申請專利範圍第1項之半導體裝置,其中 前述源極電極或前述汲極電極之一部分,覆蓋著前述第3氮化物半導體層之至少一部分。
- 如申請專利範圍第1項之半導體裝置,其中 前述源極電極與前述汲極電極之各個,與前述第3氮化物半導體層接觸。
- 如申請專利範圍第5項之半導體裝置,其中 前述源極電極與前述汲極電極之各個,其側面與前述第3氮化物半導體層接觸。
- 如申請專利範圍第1項之半導體裝置,其中 前述源極電極與前述汲極電極之各個,與前述第3氮化物半導體層為非接觸。
- 如申請專利範圍第5項之半導體裝置,其中 前述源極電極與前述汲極電極之各個,其一部分覆蓋著前述第3氮化物半導體層之至少一部分。
- 如申請專利範圍第1項之半導體裝置,其中 進而具備覆蓋前述第3氮化物半導體層、前述源極電極、前述汲極電極與前述閘極電極的保護層。
- 如申請專利範圍第1項之半導體裝置,其中 前述第1氮化物半導體層為通道層,前述第2氮化物半導體層為緩衝層,而且前述第3氮化物半導體層為帽蓋層。
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