TW201933471A - Plasma treating apparatus which increases the tolerance of a loading table to plasma even when dry cleaning is performed - Google Patents

Plasma treating apparatus which increases the tolerance of a loading table to plasma even when dry cleaning is performed Download PDF

Info

Publication number
TW201933471A
TW201933471A TW107139129A TW107139129A TW201933471A TW 201933471 A TW201933471 A TW 201933471A TW 107139129 A TW107139129 A TW 107139129A TW 107139129 A TW107139129 A TW 107139129A TW 201933471 A TW201933471 A TW 201933471A
Authority
TW
Taiwan
Prior art keywords
gas
plasma
substrate
insulating layer
chamber
Prior art date
Application number
TW107139129A
Other languages
Chinese (zh)
Other versions
TWI789450B (en
Inventor
佐佐木芳彦
南雅人
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201933471A publication Critical patent/TW201933471A/en
Application granted granted Critical
Publication of TWI789450B publication Critical patent/TWI789450B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Providing a plasma treating apparatus which increases the tolerance of a loading table to plasma even when dry cleaning is performed. The plasma etching apparatus comprises: an insulating layer (145) of an electrostatic chuck (132) configuring a loading surface of a substrate loading table (130) on which a substrate for plasma treatment is loaded. The insulating layer (145) is formed by alumina, yttria, and a silicide. In addition, the plasma etching apparatus (30) comprises an adsorption electrode (146) provided in the insulating layer (145) for adsorbing the substrate by a predetermined voltage applied thereto. The adsorption electrode (146) is formed of nickel-containing metal or chromium-containing metal.

Description

電漿處理裝置Plasma processing device

本發明的各種側面及實施形態係有關於電漿處理裝置。Various aspects and embodiments of the present invention relate to a plasma processing apparatus.

從前已知有進行蝕刻及成膜等電漿處理的電漿處理裝置。電漿處理裝置設置載置玻璃基板等被處理體的載置台。載置台，在載置被處理體的上面，設置由氧化鋁的溶射膜、及電極層、密封劑等構成的靜電夾盤，在電漿處理時藉由靜電夾盤來吸附被處理體。A plasma processing apparatus for performing plasma treatment such as etching and film formation has been known. The plasma processing apparatus is provided with a mounting table on which a target object such as a glass substrate is placed. The mounting table is provided with an electrostatic chuck composed of an aluminum oxide film, an electrode layer, a sealant or the like on the upper surface on which the object to be processed is placed, and the object to be processed is adsorbed by the electrostatic chuck during the plasma treatment.

而且，電漿處理裝置為了除去因電漿處理而附著於載置台上的生成物，進行供應清理用的氣體並清理的乾式清理。

[先前技術文獻]
[專利文獻]Further, in order to remove the product adhering to the mounting table by the plasma treatment, the plasma processing apparatus performs dry cleaning for supplying the cleaning gas and cleaning.

[Previous Technical Literature]
[Patent Literature]

[專利文獻1] 特開2008-066707號公報[Patent Document 1] JP-A-2008-066707

[發明所欲解決的問題][Problems to be solved by the invention]

不過，電漿處理裝置因乾式清理而載置台會消耗。例如，因乾式清理，構成靜電夾盤的材料會消耗。

[解決問題的手段]However, the plasma processing apparatus will be consumed by the mounting table due to dry cleaning. For example, due to dry cleaning, the materials that make up the electrostatic chuck are consumed.

[Means for solving problems]

揭示的電漿處理裝置，在1個實施態樣中，具有：構成載置成為電漿處理的對象的被處理體的載置台的載置面的絕緣層。絕緣層藉由氧化鋁、氧化釔及矽化合物形成。又，電漿處理裝置具有：設於絕緣層內，藉由施加預定的電壓來吸附被處理體的吸附電極。吸附電極以含鎳金屬或含鉻金屬形成。

[發明的效果]In one embodiment, the plasma processing apparatus disclosed above has an insulating layer that constitutes a mounting surface on which a mounting table of a target object to be subjected to plasma processing is placed. The insulating layer is formed of aluminum oxide, cerium oxide, and cerium compound. Further, the plasma processing apparatus includes an adsorption electrode that is provided in the insulating layer and that adsorbs the object to be processed by applying a predetermined voltage. The adsorption electrode is formed of a nickel-containing metal or a chromium-containing metal.

[Effects of the Invention]

根據揭示的電漿處理裝置的1個態樣，即便是進行乾式清理的情形，也能夠發揮提高對載置台的電漿的耐性的效果。According to one aspect of the disclosed plasma processing apparatus, even in the case of dry cleaning, the effect of improving the resistance to the plasma of the mounting table can be exhibited.

以下，參照圖式詳細說明有關本案揭示的電漿處理裝置的實施形態。此外，於各圖式中對於相同或是相當的部分附上相同符號。又，本實施形態揭示的發明並非限定者。各實施形態可以在不使處理內容矛盾的範圍內進行適宜組合。Hereinafter, embodiments of the plasma processing apparatus disclosed in the present application will be described in detail with reference to the drawings. In addition, the same symbols are attached to the same or corresponding parts in the drawings. Further, the invention disclosed in the embodiment is not limited. Each embodiment can be appropriately combined within a range that does not contradict the processing contents.

＜適用本發明的實施形態的電漿處理方法的基板的構造＞
圖1為表示適用本發明的實施形態的電漿處理方法的被處理體的構造的剖面圖。在本實施形態中，以將被處理體作為基板S的情形為例說明。<Configuration of Substrate to which the plasma processing method according to the embodiment of the present invention is applied>
Fig. 1 is a cross-sectional view showing the structure of a target object to which a plasma processing method according to an embodiment of the present invention is applied. In the present embodiment, a case where the object to be processed is used as the substrate S will be described as an example.

該基板S具有在玻璃基板上形成頂閘極型TFT的構造。具體來說，如圖1所示，在玻璃基板1上形成由Mo系材料(Mo、MoW)構成的遮光層2，在其上隔介著絕緣膜3形成由半導體層即多晶矽構成的多晶矽膜(p－Si膜)4，在其上隔介著閘極絕緣膜5形成由Mo系材料(Mo、MoW)構成的閘極電極6，並在其上形成層間絕緣膜7。在層間絕緣膜7形成接觸孔，在層間絕緣膜7之上形成通過接觸孔連接至p－Si膜4的源極電極8a及汲極電極8b。源極電極8a及汲極電極8b，例如，由依序將鈦膜、鋁膜、鈦膜層積而成的Ti/Al/Ti構造的含Al金屬膜構成。在源極電極8a及汲極電極8b之上，形成例如由SiN膜構成的保護膜(圖未示)，在保護膜之上形成連接至源極電極8a及汲極電極8b的透明電極(圖未示)。This substrate S has a structure in which a top gate type TFT is formed on a glass substrate. Specifically, as shown in FIG. 1, a light shielding layer 2 made of a Mo-based material (Mo, MoW) is formed on the glass substrate 1, and a polycrystalline germanium film composed of a semiconductor layer, that is, a polycrystalline silicon, is formed thereon via the insulating film 3. The (p-Si film) 4 is formed with a gate electrode 6 made of a Mo-based material (Mo, MoW) via a gate insulating film 5, and an interlayer insulating film 7 is formed thereon. A contact hole is formed in the interlayer insulating film 7, and a source electrode 8a and a drain electrode 8b which are connected to the p-Si film 4 through a contact hole are formed on the interlayer insulating film 7. The source electrode 8a and the drain electrode 8b are composed of, for example, an Al-containing metal film of a Ti/Al/Ti structure in which a titanium film, an aluminum film, and a titanium film are laminated in this order. On the source electrode 8a and the drain electrode 8b, a protective film (not shown) made of, for example, a SiN film is formed, and a transparent electrode connected to the source electrode 8a and the drain electrode 8b is formed on the protective film (Fig. Not shown).

＜第1實施形態＞
首先，說明關於第1實施形態。第1實施形態中，以圖1所示的形成基板S的源極電極8a及汲極電極8b時的含Al金屬膜的蝕刻處理為例說明。此外，用來形成源極電極8a及汲極電極8b的含Al金屬膜的蝕刻時，在其上形成具有預定圖案的光阻膜(圖未示)，並將其作為遮罩進行電漿蝕刻。<First embodiment>
First, the first embodiment will be described. In the first embodiment, the etching treatment of the Al-containing metal film when the source electrode 8a and the drain electrode 8b of the substrate S are formed as shown in FIG. 1 will be described as an example. Further, in the etching of the Al-containing metal film for forming the source electrode 8a and the drain electrode 8b, a photoresist film (not shown) having a predetermined pattern is formed thereon, and plasma etching is performed as a mask. .

[用於第1實施形態的處理系統及電漿蝕刻裝置等的裝置構成]
最先說明關於用於第1實施形態的處理系統及電漿蝕刻裝置等的裝置構成。[Device configuration of the processing system and the plasma etching apparatus used in the first embodiment]
First, the configuration of the apparatus used in the processing system, the plasma etching apparatus, and the like according to the first embodiment will be described.

圖2為表示用來實施第1實施形態的處理方法的處理系統的概略平面圖。圖3為表示搭載於圖2的處理系統的電漿蝕刻裝置的剖面圖。圖6為表示搭載於圖2的處理系統的後處理裝置的概略圖。Fig. 2 is a schematic plan view showing a processing system for carrying out the processing method of the first embodiment. Fig. 3 is a cross-sectional view showing a plasma etching apparatus mounted in the processing system of Fig. 2; Fig. 6 is a schematic view showing a post-processing device mounted in the processing system of Fig. 2;

如圖2所示，處理系統100為多腔室型的處理系統，具有：真空搬送室10、裝載鎖定室20、2個電漿蝕刻裝置30、後處理裝置40。電漿蝕刻裝置30及後處理裝置40在預定的減壓氛圍下進行處理。真空搬送室10的平面形狀形成矩形狀。裝載鎖定室20、2個電漿蝕刻裝置30及後處理裝置40在真空搬送室10的各壁部通過閘閥G連接。在裝載鎖定室20的外側，配置收容矩形狀基板S的載體50。As shown in FIG. 2, the processing system 100 is a multi-chamber type processing system having a vacuum transfer chamber 10, a load lock chamber 20, two plasma etching apparatuses 30, and a post-processing apparatus 40. The plasma etching apparatus 30 and the post-processing apparatus 40 are processed under a predetermined reduced pressure atmosphere. The planar shape of the vacuum transfer chamber 10 is formed in a rectangular shape. The load lock chamber 20, the two plasma etching apparatuses 30, and the post-processing apparatus 40 are connected to each wall portion of the vacuum transfer chamber 10 via a gate valve G. A carrier 50 that accommodates the rectangular substrate S is disposed outside the load lock chamber 20.

在該等2個載體50之間，設置搬送機構60，該搬送機構60具有：設於上下2段的夾具61(僅圖示1個)、及能使其等一體進出退避及旋轉支持的基底62。Between the two carriers 50, a transport mechanism 60 is provided. The transport mechanism 60 includes a jig 61 (only one of which is shown in the upper and lower stages) and a base that can be integrated into and out of the retraction and rotation support. 62.

真空搬送室10能保持於預定的減壓氛圍，其中，如圖2所示，設有真空搬送機構70。接著，藉由該真空搬送機構70，在裝載鎖定室20、2個電漿蝕刻裝置30、及後處理裝置40之間搬送基板S。真空搬送機構70在可旋轉及上下移動的基底71上以可前後動的方式設置2個基板搬送臂72(僅圖示1個)。The vacuum transfer chamber 10 can be maintained in a predetermined reduced pressure atmosphere, and as shown in FIG. 2, a vacuum transfer mechanism 70 is provided. Next, the vacuum transfer mechanism 70 transports the substrate S between the load lock chamber 20, the two plasma etching apparatuses 30, and the post-processing apparatus 40. The vacuum transfer mechanism 70 is provided with two substrate transfer arms 72 (only one shown) on the base 71 that can be rotated and moved up and down.

裝載鎖定室20因為是用以在處於大氣氛圍的載體50與減壓氛圍的真空搬送室10之間進行基板S的收授者，能在短時間切換真空氛圍與大氣氛圍。裝載鎖定室20設置上下2段的基板收容部(圖未示)，在各基板收容部內基板S藉由***(圖未示)來對位。The load lock chamber 20 is a receiver for carrying out the substrate S between the carrier 50 in an atmospheric atmosphere and the vacuum transfer chamber 10 in a reduced pressure atmosphere, and can switch the vacuum atmosphere and the atmospheric atmosphere in a short time. The load lock chamber 20 is provided with a substrate accommodating portion (not shown) in two stages, and the substrate S is aligned by a positioner (not shown) in each of the substrate accommodating portions.

電漿蝕刻裝置30為用來將基板S的含Al金屬膜進行蝕刻者，如圖3所示，例如，具有內壁面由經陽極氧化處理的鋁所構成的角筒形狀的氣密本體容器101。該本體容器101接地。本體容器101藉由介電體壁102上下畫分，上側成為畫定成天線室的天線容器103、下側成為畫定成處理室的腔室(處理容器)104。介電體壁102構成腔室104的頂壁，由Al2 O3 等陶瓷、石英等構成。The plasma etching apparatus 30 is for etching an Al-containing metal film of the substrate S. As shown in FIG. 3, for example, a gas-tight body container 101 having a rectangular tube shape in which an inner wall surface is made of anodized aluminum is used. . The body container 101 is grounded. The main body container 101 is vertically divided by the dielectric body wall 102, and the upper side is an antenna container 103 which is defined as an antenna room, and the lower side is a chamber (processing container) 104 which is defined as a processing chamber. The dielectric body wall 102 constitutes the top wall of the chamber 104, and is made of ceramic such as Al 2 O 3 , quartz or the like.

在本體容器101中的天線容器103的側壁103a與腔室104的側壁104a之間，設有向內側突出的支持棚105。在支持棚105之上載置介電體壁102。Between the side wall 103a of the antenna container 103 in the main body container 101 and the side wall 104a of the chamber 104, a support shed 105 projecting inward is provided. A dielectric body wall 102 is placed on the support shed 105.

在介電體壁102的下側部分嵌入處理氣體供應用的噴淋框體111。噴淋框體111設為十字狀，成為將介電體壁102從下支持的樑構造。噴淋框體111成為藉由複數條吊桿(圖未示)吊於本體容器101的頂部的狀態。A shower frame 111 for supplying a processing gas is embedded in a lower portion of the dielectric body wall 102. The shower frame 111 has a cross shape and is a beam structure that supports the dielectric body wall 102 from below. The shower frame 111 is in a state of being suspended from the top of the main body container 101 by a plurality of hangers (not shown).

該噴淋框體111以導電性材料，例如其內面或外面經陽極氧化處理的鋁構成。該噴淋框體111形成以水平延伸的氣體流路112，在該氣體流路112連通向下方延伸的複數氣體吐出孔112a。The shower frame 111 is made of a conductive material such as anodized aluminum on its inner or outer surface. The shower frame 111 is formed with a gas flow path 112 extending horizontally, and the gas flow path 112 communicates with a plurality of gas discharge holes 112a extending downward.

另一方面，在介電體壁102的上面中央，設有連通至該氣體流路112的氣體供應管121。氣體供應管121從本體容器101的頂部向其外側貫通，分岐成分岐管121a、121b。在分岐管121a連接供應含氯氣體，例如，Cl2 氣體的含氯氣體供應源122。又，分岐管121b連接至供應作為淨化氣體及稀釋氣體使用的Ar氣體、N2 氣體等不活性氣體的不活性氣體供應源123。含氯氣體作為蝕刻氣體及乾式清理氣體使用。分岐管121a、121b設有質量流量控制器等流量控制器及閥門系統。On the other hand, a gas supply pipe 121 that communicates with the gas flow path 112 is provided at the center of the upper surface of the dielectric body wall 102. The gas supply pipe 121 penetrates from the top of the main body container 101 to the outside thereof, and branches the component manifolds 121a and 121b. A chlorine-containing gas supply source 122 that supplies a chlorine-containing gas, for example, a Cl 2 gas, is connected to the branching pipe 121a. Further, the branching pipe 121b is connected to an inert gas supply source 123 that supplies an inert gas such as Ar gas or N 2 gas used as a purge gas and a diluent gas. The chlorine-containing gas is used as an etching gas and a dry cleaning gas. The branch pipes 121a and 121b are provided with a flow controller such as a mass flow controller and a valve system.

氣體供應管121、分岐管121a、121b、含氯氣體供應源122、不活性氣體供應源123、以及流量控制器及閥門系統構成處理氣體供應機構120。The gas supply pipe 121, the branch pipes 121a and 121b, the chlorine-containing gas supply source 122, the inert gas supply source 123, and the flow rate controller and the valve system constitute the process gas supply mechanism 120.

在電漿蝕刻裝置30中，從處理氣體供應機構120供應的含氯氣體被供應至噴淋框體111內，從其下面的氣體吐出孔112a向腔室104內吐出，進行基板S的含Al金屬膜的蝕刻或腔室104的乾式清理。乾式清理為藉由供應清理用的氣體，不開放腔室104而將附著於腔室104內的反應生成物除去的處理。作為含氯氣體，較佳為氯(Cl2 )氣體，但也可以使用三氯化硼(BCl3 )氣體、四氯化碳(CCl4 )氣體等。In the plasma etching apparatus 30, the chlorine-containing gas supplied from the processing gas supply mechanism 120 is supplied into the shower housing 111, and is discharged from the lower gas discharge hole 112a into the chamber 104 to perform Al-containing substrate S. Etching of the metal film or dry cleaning of the chamber 104. The dry cleaning is a process of removing the reaction product adhering to the chamber 104 without opening the chamber 104 by supplying the gas for cleaning. As the chlorine-containing gas, chlorine (Cl 2 ) gas is preferable, but boron trichloride (BCl 3 ) gas, carbon tetrachloride (CCl 4 ) gas or the like can also be used.

在天線容器103內中配設高頻(RF)天線113。高頻天線113將由銅及鋁等良導電性金屬構成的天線113a配置成環狀或渦卷狀等從前使用的任意形狀而構成。高頻天線113也可以是具有複數天線部的多重天線。高頻天線113藉由以絕緣構件構成的間隙物117從介電體壁102離間。A high frequency (RF) antenna 113 is disposed in the antenna container 103. In the high-frequency antenna 113, the antenna 113a made of a good conductive metal such as copper or aluminum is placed in an arbitrary shape such as a ring shape or a spiral shape. The high frequency antenna 113 may also be a multiple antenna having a plurality of antenna portions. The high frequency antenna 113 is separated from the dielectric body wall 102 by a spacer 117 made of an insulating member.

在天線113a的端子118連接向天線容器103的上方延伸的供電構件116。在供電構件116的上端連接供電線119，在供電線119連接整合器114及高頻電源115。接著，藉由對高頻天線113從高頻電源115供應頻率例如為13.56MHz的高頻電力，在腔室104內形成感應電場，因為該感應電場從噴淋框體111供應的處理氣體被電漿化，生成感應耦合電漿。A power supply member 116 that extends above the antenna container 103 is connected to the terminal 118 of the antenna 113a. A power supply line 119 is connected to the upper end of the power supply member 116, and an integrator 114 and a high frequency power supply 115 are connected to the power supply line 119. Next, by supplying the high-frequency power of the high-frequency power source 115 to the high-frequency power source 115, for example, a high-frequency power of 13.56 MHz, an induced electric field is formed in the chamber 104 because the processing gas supplied from the shower frame 111 by the induced electric field is electrically charged. Slurry to generate inductively coupled plasma.

在腔室104內的底壁，隔介著由形成框架形狀的絕緣體構成的間隙物134，設置載置基板S的基板載置台130。基板載置台130具有：設於上述間隙物134之上的基材131、設於基材131之上的靜電夾盤132、覆蓋基材131及靜電夾盤132的側壁的側壁絕緣構件133。基材131及靜電夾盤132形成對應基板S形狀的矩形狀，基板載置台130的全體形成四角板狀或柱狀。間隙物134及側壁絕緣構件133以氧化鋁等絕緣性陶瓷構成。The substrate mounting table 130 on which the substrate S is placed is provided on the bottom wall in the chamber 104 with the spacer 134 formed of an insulator forming a frame shape interposed therebetween. The substrate stage 130 includes a substrate 131 provided on the spacer 134, an electrostatic chuck 132 provided on the substrate 131, and a sidewall insulating member 133 covering the substrate 131 and the sidewall of the electrostatic chuck 132. The base material 131 and the electrostatic chuck 132 are formed in a rectangular shape corresponding to the shape of the substrate S, and the entire substrate mounting table 130 is formed in a square plate shape or a columnar shape. The spacer 134 and the sidewall insulating member 133 are made of an insulating ceramic such as alumina.

靜電夾盤132具有：由形成於基材131的表面的陶瓷溶射膜等介電體構成的絕緣層145、設於絕緣層145的內部的吸附電極146。The electrostatic chuck 132 has an insulating layer 145 made of a dielectric material such as a ceramic spray film formed on the surface of the substrate 131, and an adsorption electrode 146 provided inside the insulating layer 145.

在此，利用圖4說明關於基材131及靜電夾盤132的構成。圖4為表示第1實施形態的基材及靜電夾盤的構成的剖面圖。Here, the configuration of the base material 131 and the electrostatic chuck 132 will be described with reference to FIG. 4 . Fig. 4 is a cross-sectional view showing the structure of a substrate and an electrostatic chuck according to the first embodiment.

靜電夾盤132配置於基材131之上。基材131例如由不銹鋼形成。基材131藉由使用不銹鋼，也能夠作為高溫電極使用，也能夠在含氯氣體的電漿環境、後述的含氟氣體的電漿環境中使用。The electrostatic chuck 132 is disposed on the substrate 131. The base material 131 is formed of, for example, stainless steel. The base material 131 can also be used as a high-temperature electrode by using stainless steel, and can also be used in a plasma environment containing a chlorine gas or a plasma environment of a fluorine-containing gas to be described later.

靜電夾盤132具有：絕緣層145、設於絕緣層145內部的吸附電極146。絕緣層145具有：在上下方向重疊的2層上部絕緣層145a、下部絕緣層145b。在本實施形態中，絕緣層145具有：相對於吸附電極146成為基板S側的上部絕緣層145a、相對於吸附電極146成為基板S的相反側的下部絕緣層145b。The electrostatic chuck 132 has an insulating layer 145 and an adsorption electrode 146 provided inside the insulating layer 145. The insulating layer 145 has two upper insulating layers 145a and a lower insulating layer 145b which are stacked in the vertical direction. In the present embodiment, the insulating layer 145 has an upper insulating layer 145a on the substrate S side with respect to the adsorption electrode 146, and a lower insulating layer 145b on the opposite side of the substrate S with respect to the adsorption electrode 146.

上部絕緣層145a及下部絕緣層145b以混合溶射膜構成。混合溶射膜為將氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、矽化合物的混合物溶射形成者。Y2 O3 材質上電漿耐性高。又，Al2 O3 對含氯氣體的化學耐性高。再來，矽化合物因為有成為玻璃質埋入Y2 O3 及Al2 O3 之粒界而緻密化的作用，混合溶射膜對Cl2 氣體等含氯氣體的電漿具有高耐性。作為混合溶射膜，較佳為作為矽化合物使用氧化矽(SiO2 )的Al2 O3 ・Y2 O3 ・SiO2 膜。又，也可以使用作為矽化合物使用氮化矽(Si3 N4 )的Al2 O3 ・Y2 O3 ・SiO2 ・Si3 N4 膜。The upper insulating layer 145a and the lower insulating layer 145b are formed by a mixed spray film. The mixed spray film is formed by dissolving a mixture of alumina (Al 2 O 3 ), yttrium oxide (Y 2 O 3 ), and ruthenium compound. The plasma resistance of the Y 2 O 3 material is high. Further, Al 2 O 3 has high chemical resistance to chlorine-containing gas. Further, the ruthenium compound has a function of densifying the grain boundary of the grain boundary of Y 2 O 3 and Al 2 O 3 , and the mixed solvent film has high resistance to a plasma containing a chlorine gas such as a Cl 2 gas. As the mixed spray film, an Al 2 O 3 , Y 2 O 3 , SiO 2 film of ruthenium oxide (SiO 2 ) is preferably used as the ruthenium compound. Further, an Al 2 O 3 , Y 2 O 3 , SiO 2 , Si 3 N 4 film using tantalum nitride (Si 3 N 4 ) as the antimony compound may be used.

從前，為了在絕緣層145提高絕緣性，進行封孔構件所致的封孔處理。不過，封孔構件在進行乾式清理時，會有從絕緣層145脫離成為粒子的原因的情形。其中，在本實施形態中，上部絕緣層145a與下部絕緣層145b之中，僅在下部絕緣層145b進行封孔構件所致的封孔處理。亦即，上部絕緣層145a不進行封孔處理。藉此，在上部絕緣層145a不進行封孔處理，能夠抑制進行乾式清理時的粒子的產生。In the past, in order to improve the insulation property of the insulating layer 145, the sealing treatment by the plugging member was performed. However, when the plugging member is subjected to dry cleaning, there is a case where it is separated from the insulating layer 145 into particles. In the present embodiment, among the upper insulating layer 145a and the lower insulating layer 145b, the sealing treatment by the plugging member is performed only on the lower insulating layer 145b. That is, the upper insulating layer 145a is not subjected to the sealing treatment. Thereby, the upper insulating layer 145a is not subjected to the sealing treatment, and generation of particles during dry cleaning can be suppressed.

因為未對上部絕緣層145a進行封孔處理，吸附電極146有使用對氯系氣體腐蝕少的金屬的必要。在此，吸附電極146以含鎳金屬構成。例如，吸附電極146藉由Ni－5Al、SUS316L、哈氏合金(Hastelloy)的任一者形成。該等含鎳金屬對含氯氣體的電漿耐性高。此外，純鎳因為是強磁性體，作為吸附電極146不佳。吸附電極146較佳為使用磁性少的含鎳金屬。Since the upper insulating layer 145a is not subjected to the sealing treatment, the adsorption electrode 146 is required to use a metal which is less corrosive to the chlorine-based gas. Here, the adsorption electrode 146 is made of a nickel-containing metal. For example, the adsorption electrode 146 is formed by any of Ni-5Al, SUS316L, and Hastelloy. These nickel-containing metals have high plasma resistance to chlorine-containing gases. Further, since pure nickel is a ferromagnetic body, it is not preferable as the adsorption electrode 146. The adsorption electrode 146 is preferably a nickel-containing metal having little magnetic properties.

圖5為表示對金屬的氯系氣體的耐性的一例的圖。圖5中，表示關於Cr、Ni－5Al、SUS316L及哈氏合金、從前用於吸附電極146的鎢(W)及鉬(Mo)，作為氯系氣體相對於Cl氣體系的切削量。此外，圖5所示的切削量，為將Ni－5Al的切削量作為基準規格化的值，將小數點以下四捨五入。如圖5所示，Ni－5Al、SUS316L及哈氏合金相對於對氯系氣體，切削量少、耐性高。FIG. 5 is a view showing an example of resistance to a metal chlorine-based gas. Fig. 5 shows the amounts of cutting of the chlorine gas and the Cl gas system with respect to Cr, Ni-5Al, SUS316L, and Hastelloy, and tungsten (W) and molybdenum (Mo) used for the adsorption electrode 146. In addition, the cutting amount shown in FIG. 5 is a value which normalizes the cutting amount of Ni-5Al as a standard, and rounds off the decimal point. As shown in FIG. 5, Ni-5Al, SUS316L, and Hastelloy have a small amount of cut and high resistance with respect to a chlorine-based gas.

又，上部絕緣層145a因為不進行封孔處理，緻密地溶射較佳。又，上部絕緣層145a對靜電夾盤132設有加熱機能、或從基材131使熱傳熱等，有升溫的可能性時，因為過於緻密耐熱性會降低，需要某種程度的空孔。在此，上部絕緣層145a藉由準緻密混合溶射形成。上部絕緣層145a的氣孔率設為1.5％～4％的範圍較佳。氣孔率設為2.1％～3.1％的範圍更佳。藉此，上部絕緣層145a抑制了向內部的氣體的進入，能夠抑制氣體到達吸附電極146。下部絕緣層145b也與上部絕緣層145a一樣，藉由準緻密混合溶射形成也可以。Further, since the upper insulating layer 145a is not subjected to the sealing treatment, it is preferably densely dispersed. Further, when the upper insulating layer 145a is provided with a heating function for the electrostatic chuck 132 or heat transfer from the substrate 131, there is a possibility that the temperature rises, and the excessive heat resistance is lowered, and a certain degree of voids is required. Here, the upper insulating layer 145a is formed by quasi-dense mixed spraying. The porosity of the upper insulating layer 145a is preferably in the range of 1.5% to 4%. The range in which the porosity is set to 2.1% to 3.1% is more preferable. Thereby, the upper insulating layer 145a suppresses the entry of gas into the inside, and it is possible to suppress the gas from reaching the adsorption electrode 146. Similarly to the upper insulating layer 145a, the lower insulating layer 145b may be formed by quasi-dense mixing and spraying.

吸附電極146能夠取板狀、膜狀、格子狀、網狀等各種形態。如圖3所示，吸附電極146通過供電線147連接直流電源148，對吸附電極146施加直流電壓。向吸附電極146的供電以開關(圖未示)進行開啟關閉。藉由對吸附電極146施加直流電壓，產生庫倫力造成的靜電吸附力吸附基板S。The adsorption electrode 146 can take various forms such as a plate shape, a film shape, a lattice shape, and a mesh shape. As shown in FIG. 3, the adsorption electrode 146 is connected to the DC power source 148 via a power supply line 147, and a DC voltage is applied to the adsorption electrode 146. The power supply to the adsorption electrode 146 is turned on and off by a switch (not shown). The substrate S is adsorbed by the electrostatic adsorption force caused by the Coulomb force by applying a DC voltage to the adsorption electrode 146.

基材131通過供電線151連接偏壓施加用的高頻電源153。又，在供電線151的基材131與高頻電源153之間設置整合器152。高頻電源153為用於在基材131上的基板S吸引離子者，使用50kHz～10MHz的範圍的頻率，例如3.2MHz。The substrate 131 is connected to the high frequency power source 153 for bias application via the power supply line 151. Further, an integrator 152 is provided between the substrate 131 of the power supply line 151 and the high-frequency power source 153. The high-frequency power source 153 is a source for attracting ions on the substrate S on the substrate 131, and a frequency in the range of 50 kHz to 10 MHz, for example, 3.2 MHz is used.

此外，在基板載置台130的基材131內，為了控制基板S的溫度，設有加熱器及冷媒流路等調溫機構及溫度感測器(都未圖示)。又，以在基板載置台130載置基板S的狀態，設有在基板S與基板載置台130之間供應熱傳達用的傳熱氣體、例如、He氣體的傳熱氣體供應機構(圖未示)。再來，在基板載置台130，將用來進行基板S的收授的複數升降銷(圖未示)以相對於靜電夾盤132的上面可進行突陷動作的方式設置，基板S的收授相對於從靜電夾盤132的上面向上方突出的狀態的升降銷進行。Further, in the base material 131 of the substrate stage 130, in order to control the temperature of the substrate S, a temperature adjustment mechanism such as a heater and a refrigerant flow path, and a temperature sensor (none of which are shown) are provided. In addition, a heat transfer gas supply mechanism for supplying a heat transfer gas for heat transfer, for example, He gas, between the substrate S and the substrate stage 130 is provided in a state in which the substrate S is placed on the substrate stage 130 (not shown). ). Further, on the substrate stage 130, a plurality of lift pins (not shown) for carrying out the substrate S are provided so as to be able to perform a sag operation with respect to the upper surface of the electrostatic chuck 132, and the substrate S is received. The lift pin is in a state of protruding upward from the upper surface of the electrostatic chuck 132.

在腔室104的側壁104a，設用來將基板S對腔室104搬入搬出的搬入出口155，搬入出口155能藉由閘閥G開關。藉由將閘閥G設為開，藉由設於真空搬送室10內的真空搬送機構70能通過搬入出口155將基板S搬入搬出。In the side wall 104a of the chamber 104, a carry-in port 155 for loading and unloading the substrate S into the chamber 104 is provided, and the carry-in port 155 can be opened and closed by the gate valve G. By opening the gate valve G, the vacuum transfer mechanism 70 provided in the vacuum transfer chamber 10 can carry in and out the substrate S through the carry-in port 155.

腔室104的底壁的緣部或角部，形成有複數排氣口159(僅圖示2個)。在各排氣口159設有排氣部160。排氣部160具有：連接至排氣口159的排氣配管161、藉由調整排氣配管161的開度控制腔室104內的壓力的自動壓力控制閥門(APC)162、用來將腔室104內通過排氣配管161排氣的真空泵163。接著，腔室104內藉由真空泵163排氣，在電漿蝕刻處理中，藉由調整自動壓力控制閥門(APC)162的開度，將腔室104內設定、維持在預定的真空氛圍。A plurality of exhaust ports 159 (only two are shown) are formed at the edge or corner of the bottom wall of the chamber 104. An exhaust unit 160 is provided at each exhaust port 159. The exhaust unit 160 has an exhaust pipe 161 connected to the exhaust port 159, and an automatic pressure control valve (APC) 162 for controlling the pressure in the chamber 104 by adjusting the opening degree of the exhaust pipe 161, for the chamber A vacuum pump 163 that is exhausted through the exhaust pipe 161 in 104. Next, the chamber 104 is evacuated by a vacuum pump 163, and the chamber 104 is set and maintained in a predetermined vacuum atmosphere by adjusting the opening degree of the automatic pressure control valve (APC) 162 in the plasma etching process.

後處理裝置40為在將基板S的含Al金屬膜蝕刻後，用以進行腐蝕抑制的後處理者。後處理裝置40，如圖6所示，具有供應與電漿蝕刻裝置30不同的氣體的處理氣體供應機構120’來取代處理氣體供應機構120。在圖6中雖省略除此之外的構成，與電漿蝕刻裝置30有一樣的構成。此外，在以下的說明中，有關與上述電漿蝕刻裝置30相同的構件，附加相同符號說明。The post-processing device 40 is a post-processor for etching corrosion after etching the Al-containing metal film of the substrate S. The post-processing device 40, as shown in Fig. 6, has a process gas supply mechanism 120' that supplies a gas different from the plasma etching device 30 in place of the process gas supply mechanism 120. In FIG. 6, the other configuration is omitted, and the plasma etching apparatus 30 has the same configuration. In the following description, the same members as those of the plasma etching apparatus 30 will be denoted by the same reference numerals.

後處理裝置40的處理氣體供應機構120’具有：氣體供應管121’、在本體容器101的上方外側從氣體供應管121’分岐的分岐管121a’、121b’、121c’、連接至分岐管121a’，供應O2 氣體的O2 氣體供應源124、連接至分岐管121b’，供應含氟氣體的含氟氣體供應源125、連接至分岐管121c’，作為淨化氣體及稀釋氣體供應Ar氣體、N2 氣體等不活性氣體的不活性氣體供應源126。氣體供應管121’與電漿蝕刻裝置30的氣體供應管121一樣，連接至噴淋框體111的氣體流路112(參照圖3)。分岐管121a’、121b’、121c’設有質量流量控制器等流量控制器及閥門系統。The processing gas supply mechanism 120' of the post-processing device 40 has a gas supply pipe 121', branching pipes 121a', 121b', 121c' branched from the gas supply pipe 121' on the upper side of the main body container 101, and connected to the branching pipe 121a ', an O 2 gas supply source 124 supplying O 2 gas, connected to the branching pipe 121 b ′, a fluorine-containing gas supply source 125 supplying a fluorine-containing gas, connected to the branching pipe 121 c ′, supplying Ar gas as a purge gas and a diluent gas, An inert gas supply source 126 of an inert gas such as N 2 gas. The gas supply pipe 121' is connected to the gas flow path 112 of the shower frame 111 (see Fig. 3) like the gas supply pipe 121 of the plasma etching apparatus 30. The branch pipes 121a', 121b', 121c' are provided with a flow controller such as a mass flow controller and a valve system.

在後處理裝置40中，將從處理氣體供應機構120’供應的O2 氣體、或O2 氣體及含氟氣體通過噴淋框體111向腔室104內吐出，進行基板S的蝕刻後的含Al金屬膜的腐蝕抑制處理。作為含氟氣體，較佳為四氟化碳(CF4 )，但也可以使用六氟化硫(SF6 )等。In the post-processing apparatus 40, the O 2 gas or the O 2 gas and the fluorine-containing gas supplied from the processing gas supply mechanism 120' are discharged into the chamber 104 through the shower housing 111, and the etching of the substrate S is performed. Corrosion inhibition treatment of Al metal film. As the fluorine-containing gas, carbon tetrafluoride (CF 4 ) is preferred, but sulfur hexafluoride (SF 6 ) or the like may also be used.

此外，在後處理裝置40中，因為在靜電夾盤132的絕緣層145沒有要求要對含氯氣體的電漿的耐性，使絕緣層145與從前一樣以由Al2 O3 或Y2 O3 構成的溶射膜來構成。又，後處理裝置40因為僅進行腐蝕抑制處理，不設置靜電夾盤132也可以。Further, in the post-processing apparatus 40, since the insulating layer 145 of the electrostatic chuck 132 is not required to be resistant to the plasma of the chlorine-containing gas, the insulating layer 145 is made of Al 2 O 3 or Y 2 O 3 as before. It is composed of a spray film. Further, since the post-processing apparatus 40 performs only the corrosion suppression processing, the electrostatic chuck 132 may not be provided.

處理系統100更具有控制部80。控制部80，以具備CPU及記憶部的電腦構成，以處理系統100的各構成部(真空搬送室10、裝載鎖定室20、電漿蝕刻裝置30、後處理裝置40、搬送機構60、真空搬送機構70的各構成部)基於記憶於記憶部中的處理配方(程式)進行預定的處理的方式來控制。處理配方儲存於硬碟、光碟、半導體記憶體等記憶媒體中。The processing system 100 further has a control unit 80. The control unit 80 is configured by a computer including a CPU and a memory unit, and each component of the processing system 100 (vacuum transfer chamber 10, load lock chamber 20, plasma etching device 30, post-processing device 40, transport mechanism 60, vacuum transfer) Each component of the mechanism 70 is controlled such that predetermined processing is performed based on a processing recipe (program) stored in the storage unit. The processing recipe is stored in a memory medium such as a hard disk, a compact disk, or a semiconductor memory.

[第1實施形態的電漿處理方法]
接著，參照圖7的流程圖說明關於以上的處理系統100進行的第1實施形態的電漿處理方法。圖7為表示第1實施形態的電漿處理方法的流程圖。[The plasma processing method of the first embodiment]
Next, a plasma processing method according to the first embodiment performed by the above processing system 100 will be described with reference to a flowchart of FIG. 7. Fig. 7 is a flow chart showing a plasma processing method according to the first embodiment.

其中，藉由處理系統100，進行用來形成在基板S形成的源極電極8a及汲極電極8b的含AL金屬膜即Ti/Al/Ti膜的電漿蝕刻處理。Here, by the processing system 100, a plasma etching process for forming a Ti/Al/Ti film containing an AL metal film formed on the source electrode 8a and the drain electrode 8b formed on the substrate S is performed.

最先，在電漿蝕刻裝置30的電漿蝕刻處理中，以使生成的反應生成物成為可乾式清理之物的方式，選定處理氣體(步驟1)。First, in the plasma etching treatment of the plasma etching apparatus 30, the processing gas is selected so that the generated reaction product becomes a dry-cleanable material (step 1).

具體來說，在本實施形態中作為處理氣體選定含氯氣體，例如，Cl2 氣體。圖8為表示作為處理氣體使用Cl2 氣體將含Al金屬膜蝕刻時的在腔室內生成的反應生成物的概略圖。使用含氯氣體將Ti/Al/Ti膜進行電漿蝕刻的情形，如圖8所示，作為反應生成物主要生成AlClx，該等的一部分附著於腔室壁成為沉積物(堆積物)。該AlClx能以高蒸氣壓乾式清理除去。Specifically, in the present embodiment, a chlorine-containing gas, for example, a Cl 2 gas, is selected as the processing gas. FIG. 8 is a schematic view showing a reaction product generated in a chamber when an Al-containing metal film is etched using a Cl 2 gas as a processing gas. When the Ti/Al/Ti film is plasma-etched using a chlorine-containing gas, as shown in Fig. 8, AlClx is mainly generated as a reaction product, and a part of these adheres to the chamber wall to form a deposit (a deposit). The AlClx can be removed by high vapor pressure dry cleaning.

圖9為表示作為處理氣體使用Cl2 氣體將含Al金屬膜蝕刻後，利用O2 氣體、或O2 氣體及CF4 氣體進行後處理時的在腔室內生成的反應生成物的概略圖。另一方面，像從前一樣，將Ti/Al/Ti膜以Cl2 氣體進行蝕刻後，在相同腔室內進行腐蝕抑制的後處理時，如圖9所示，作為後處理氣體供應O2 氣體進行電漿處理後，附著的AlClx與O2 氣體發生反應而在腔室內生成蒸氣壓低的AlOx。又，為了再將腐蝕抑制效果提高，除了O2 氣體以外也供應含氟氣體，例如，CF4 氣體，在腔室內除了AlOx以外，也還是生成蒸氣壓低的AlFx。該等AlOx及AlFx因為蒸氣壓而不揮發，容易附著於腔室壁而成為堆積物(堆積)。接著，其剝離後成為粒子的原因，對製品造成壞影響。又，因為該等安定性高，難以在乾式清理中除去。FIG. 9 is a schematic view showing a reaction product generated in a chamber when the Al-containing metal film is etched using a Cl 2 gas as a processing gas, and then post-treated by O 2 gas or O 2 gas and CF 4 gas. On the other hand, as in the prior art, after the Ti/Al/Ti film is etched with Cl 2 gas and subjected to post-treatment for corrosion suppression in the same chamber, as shown in FIG. 9, O 2 gas is supplied as a post-treatment gas. After the plasma treatment, the adhered AlClx reacts with the O 2 gas to generate AlOx having a low vapor pressure in the chamber. Further, in order to further improve the corrosion suppressing effect, a fluorine-containing gas, for example, CF 4 gas, is supplied in addition to the O 2 gas, and in addition to AlOx in the chamber, AlFx having a low vapor pressure is also generated. These AlOx and AlFx are not volatilized by vapor pressure, and are likely to adhere to the chamber wall to become deposits (stacking). Then, it peels off and becomes a particle, and it has a bad influence on a product. Moreover, since these stability are high, it is difficult to remove them in dry cleaning.

在此，於本實施形態中，為了在腔室內作為反應生成物生成能乾式清理的AlClx，而不生成成為粒子的原因在乾式清理中難以除去的AlOx及AlFx，將電漿蝕刻裝置30中的基板S的處理氣體設為僅有蝕刻氣體即含氯氣體(Cl2 氣體)。Here, in the present embodiment, in order to generate dry cleaned AlClx as a reaction product in the chamber, it is not necessary to generate AlOx and AlFx which are difficult to remove in the dry cleaning due to the particles, and the plasma etching apparatus 30 The processing gas of the substrate S is a chlorine-containing gas (Cl 2 gas) which is only an etching gas.

藉此選定電漿蝕刻時的處理氣體後，對形成於基板S的含Al金屬膜即Ti/Al/Ti膜，藉由電漿蝕刻裝置30，利用預先選定的處理氣體即含氯氣體，例如，Cl2 氣體施予電漿蝕刻處理(步驟2)。After the processing gas at the time of plasma etching is selected, the Ti/Al/Ti film which is an Al-containing metal film formed on the substrate S is used, and the plasma etching apparatus 30 uses a chlorine gas which is a predetermined processing gas, for example, The Cl 2 gas is subjected to a plasma etching treatment (step 2).

以下，具體說明關於步驟2的電漿蝕刻處理。Hereinafter, the plasma etching treatment with respect to step 2 will be specifically described.

從載體50藉由搬送機構60將基板S取出，並搬送至裝載鎖定室20，真空搬送室10內的真空搬送機構70從裝載鎖定室20接收基板S並向電漿蝕刻裝置30搬送。The substrate S is taken out from the carrier 50 by the transport mechanism 60 and transported to the load lock chamber 20, and the vacuum transfer mechanism 70 in the vacuum transfer chamber 10 receives the substrate S from the load lock chamber 20 and transports it to the plasma etching apparatus 30.

在電漿蝕刻裝置30中，首先，藉由真空泵163將腔室104內調整成適合真空搬送室10的壓力，將閘閥G開放從搬入出口155藉由真空搬送機構70將基板S搬入腔室104內，在基板載置台130上使基板S載置。使真空搬送機構70從腔室104退避後，將閘閥G關閉。In the plasma etching apparatus 30, first, the inside of the chamber 104 is adjusted to a pressure suitable for the vacuum transfer chamber 10 by the vacuum pump 163, and the gate valve G is opened from the carry-in port 155, and the substrate S is carried into the chamber 104 by the vacuum transfer mechanism 70. Inside, the substrate S is placed on the substrate stage 130. After the vacuum transfer mechanism 70 is retracted from the chamber 104, the gate valve G is closed.

在該狀態下，藉由自動壓力控制閥門(APC)162將腔室104內的壓力調整成預定的真空度，同時從處理氣體供應機構120通過噴淋框體111，作為處理氣體供應蝕刻氣體即含氯氣體，例如，Cl2 氣體至腔室104內。除了含氯氣體以外，作為稀釋氣體供應Ar氣體等不活性氣體也可以。In this state, the pressure in the chamber 104 is adjusted to a predetermined degree of vacuum by the automatic pressure control valve (APC) 162, and the etching gas is supplied as a processing gas from the processing gas supply mechanism 120 through the shower frame 111. A chlorine-containing gas, for example, Cl 2 gas, is introduced into the chamber 104. In addition to the chlorine-containing gas, an inert gas such as an Ar gas may be supplied as the diluent gas.

此時，基板S藉由靜電夾盤132吸附，藉由調溫機構(圖未示)調溫。At this time, the substrate S is adsorbed by the electrostatic chuck 132, and is tempered by a temperature adjustment mechanism (not shown).

接著，從高頻電源115將例如13.56MHz的高頻施加至高頻天線113，藉此通過介電體壁102在腔室104內形成均勻的感應電場。藉由以此形成的感應電場，生成含氯氣體的電漿。藉由以此生成的高密度感應耦合電漿，蝕刻基板S的含Al金屬膜即Ti/Al/Ti膜。Next, a high frequency such as 13.56 MHz is applied from the high frequency power source 115 to the high frequency antenna 113, whereby a uniform induced electric field is formed in the chamber 104 through the dielectric body wall 102. A plasma containing a chlorine gas is generated by the induced electric field formed thereby. The Ti-Al/Ti film containing the Al metal film of the substrate S is etched by the high-density inductively coupled plasma thus formed.

此時，在電漿蝕刻裝置30中，如同上述作為反應生成物生成AlClx，其一部分附著於腔室104內的壁部等。另一方面，幾乎不生成AlOx及AlFx。At this time, in the plasma etching apparatus 30, as described above, AlClx is generated as a reaction product, and a part thereof adheres to a wall portion or the like in the chamber 104. On the other hand, AlOx and AlFx are hardly generated.

接著，對電漿蝕刻後的基板S的含Al金屬膜即Ti/Al/Ti膜，藉由後處理裝置40，利用O2 氣體、或O2 氣體及含氟氣體，例如，CF4 氣體進行用來腐蝕抑制的後處理(步驟3)。Next, the Ti/Al/Ti film, which is an Al-containing metal film of the substrate S after plasma etching, is processed by the post-treatment device 40 using O 2 gas or O 2 gas and a fluorine-containing gas such as CF 4 gas. Post-treatment for corrosion inhibition (step 3).

以下，具體說明關於步驟3的後處理。Hereinafter, the post-processing with respect to step 3 will be specifically described.

藉由真空搬送機構70，從電漿蝕刻裝置30將蝕刻處理後的基板S取出，搬送至後處理裝置40。The substrate S after the etching process is taken out from the plasma etching apparatus 30 by the vacuum transfer mechanism 70, and is transported to the post-processing apparatus 40.

在後處理裝置40中，與電漿蝕刻裝置30一樣，將基板S搬入腔室104內，載置於基板載置台130上，將腔室104內的壓力調整成預定的真空度，同時從處理氣體供應機構120’通過噴淋框體111，作為後處理氣體，將O2 氣體、或O2 氣體及含氟氣體，例如，CF4 氣體供應至腔室104內。而且，作為稀釋氣體，供應Ar等不活性氣體也可以。In the post-processing apparatus 40, as in the plasma etching apparatus 30, the substrate S is carried into the chamber 104, placed on the substrate stage 130, and the pressure in the chamber 104 is adjusted to a predetermined degree of vacuum while being processed. The gas supply mechanism 120' supplies the O 2 gas, or the O 2 gas, and the fluorine-containing gas, for example, CF 4 gas, into the chamber 104 as a post-treatment gas through the shower frame 111. Further, as the diluent gas, an inert gas such as Ar may be supplied.

接著，與電漿蝕刻裝置30一同樣，藉由感應電場，生成後處理氣體O2 氣體、或O2 氣體及含氟氣體的電漿，藉由以此生成的感應耦合電漿，進行被蝕刻的含Al金屬膜即Ti/Al/Ti膜的腐蝕抑制處理。Then, similarly to the plasma etching apparatus 30, a post-process gas O 2 gas, or an O 2 gas and a fluorine-containing gas plasma are generated by an induced electric field, and the inductively coupled plasma generated thereby is etched. Corrosion suppression treatment of an Al-containing metal film, that is, a Ti/Al/Ti film.

此時，在後處理裝置40中，因為沒進行蝕刻處理，反應生成物的產生量少。At this time, in the post-processing apparatus 40, since the etching process is not performed, the amount of generation of the reaction product is small.

將在後處理裝置40的後處理之後的基板S，藉由真空搬送機構70，從後處理裝置40的腔室104取出，搬送至裝載鎖定室20，藉由搬送機構60返回至載體50。The substrate S after the post-processing of the post-processing apparatus 40 is taken out from the chamber 104 of the post-processing apparatus 40 by the vacuum transfer mechanism 70, transported to the load lock chamber 20, and returned to the carrier 50 by the transport mechanism 60.

將以上那種電漿蝕刻處理(步驟2)及後處理(步驟3)進行1次或2次以上的預定次數後，進行電漿蝕刻裝置30的腔室104內的乾式清理處理(步驟4)。After the above-described plasma etching treatment (step 2) and post-treatment (step 3) are performed once or twice or more, a dry cleaning process in the chamber 104 of the plasma etching apparatus 30 is performed (step 4). .

乾式清理為在基板載置台130上未載置基板S的狀態下，在腔室104內作為乾式清理氣體與電漿蝕刻時的蝕刻氣體一樣，供應含氯氣體，例如，Cl2 氣體，藉由與電漿蝕刻時同樣的感應耦合電漿來進行。The dry cleaning is such that, in a state where the substrate S is not placed on the substrate mounting table 130, a chlorine-containing gas such as Cl 2 gas is supplied as a dry cleaning gas in the chamber 104 like an etching gas during plasma etching. The same inductively coupled plasma as in plasma etching is performed.

藉由該乾式清理，能夠將附著於電漿蝕刻裝置30的腔室104的AlClx除去。亦即，在電漿蝕刻裝置30中，因為不進行從前那種O2 氣體、或O2 氣體及含氟氣體所致的腐蝕抑制處理，作為反應生成物不會生成難以藉由乾式清理除去的AlOx及AlFx，能進行乾式清理。By this dry cleaning, AlClx adhering to the chamber 104 of the plasma etching apparatus 30 can be removed. In other words, in the plasma etching apparatus 30, since the corrosion suppression treatment by the O 2 gas or the O 2 gas and the fluorine-containing gas is not performed, the reaction product is not generated and is difficult to be removed by dry cleaning. AlOx and AlFx for dry cleaning.

又，乾式清理時，因為在基板載置台130上未載置基板S，在靜電夾盤132不存在基板S，乾式清理氣體即含氯氣體的電漿會直接對靜電夾盤132作用。Further, in the dry cleaning, since the substrate S is not placed on the substrate stage 130, the substrate S is not present in the electrostatic chuck 132, and the dry cleaning gas, that is, the plasma containing chlorine gas acts directly on the electrostatic chuck 132.

從前，因為電漿蝕刻裝置不進行乾式清理，不會在靜電夾盤不載置基板S的狀態下進行電漿處理，靜電夾盤的絕緣層以Y2 O3 及Al2 O3 的溶射膜就充足了。不過，乾式清理時含氯氣體的電漿若直接作用，判明絕緣層為Y2 O3 及Al2 O3 的溶射膜會被破壞，會有壽命縮短之虞。為了解消該問題，雖考慮到在乾式清理時，以在基板載置台130上載置測試基板即素玻璃的狀態下進行乾式清理，但此時發生將素玻璃對電漿蝕刻裝置30進行搬入/搬出的工程，生產性會降低。In the past, since the plasma etching apparatus was not subjected to dry cleaning, plasma treatment was not performed in a state where the electrostatic chuck was not placed on the substrate S, and the insulating layer of the electrostatic chuck was a film of Y 2 O 3 and Al 2 O 3 . It is sufficient. However, if the plasma containing chlorine gas in the dry cleaning directly acts, it is found that the insulating film of the insulating layer of Y 2 O 3 and Al 2 O 3 is destroyed, and the life is shortened. In order to solve this problem, it is considered that dry cleaning is performed in a state where the test substrate, that is, plain glass, is placed on the substrate mounting table 130 during dry cleaning, but in this case, the plasma etching device 30 is carried in and out. Engineering, production will be reduced.

在這裡，在本實施形態中，作為靜電夾盤132的絕緣層145，使用將Al2 O3 、Y2 O3 、矽化合物的混合物溶射形成的混合溶射膜。Y2 O3 在材質上電漿耐性高，又Al2 O3 對含氯氣體化學耐性高，再來矽化合物具有成為玻璃質埋入Y2 O3 及Al2 O3 的粒界而緻密化的作用，混合溶射膜對Cl2 氣體等含氯氣體的電漿耐性變高，不在乾式清理時載置素玻璃，能夠保持所期望的壽命。又，絕緣層145具有：相對於吸附電極146成為基板S側的上部絕緣層145a、相對於吸附電極146成為基板S的相反側的下部絕緣層145b。在下部絕緣層145b進行封孔構件所致的封孔處理。在上部絕緣層145a不進行封孔處理。藉此，因為在上部絕緣層145a不進行封孔處理，能夠抑制乾式清理時從封孔構件的粒子的產生。Here, in the present embodiment, as the insulating layer 145 of the electrostatic chuck 132, a mixed solvent film formed by spraying a mixture of Al 2 O 3 , Y 2 O 3 , and a ruthenium compound is used. Y 2 O 3 has high plasma resistance to the material, and Al 2 O 3 has high chemical resistance to chlorine-containing gas, and the bismuth compound has a grain boundary embedded in Y 2 O 3 and Al 2 O 3 to be densified. The effect of the mixed spray film on the plasma resistance of a chlorine-containing gas such as a Cl 2 gas is high, and the glass is not placed in the dry cleaning, and the desired life can be maintained. Further, the insulating layer 145 has an upper insulating layer 145a on the substrate S side with respect to the adsorption electrode 146 and a lower insulating layer 145b on the opposite side of the substrate S with respect to the adsorption electrode 146. The sealing treatment by the sealing member is performed on the lower insulating layer 145b. The sealing treatment is not performed on the upper insulating layer 145a. Thereby, since the sealing treatment is not performed on the upper insulating layer 145a, generation of particles from the plugging member at the time of dry cleaning can be suppressed.

如同上述，作為混合溶射膜，較佳為Al2 O3 、Y2 O3 、SiO2 的混合溶射膜。又，也能夠適用Al2 O3 ・Y2 O3 ・SiO2 ・Si3 N4 的混合溶射膜。又，靜電夾盤132的吸附電極146藉由使用Ni－5Al、SUS316L、哈氏合金，對含氯氣體的電漿表現出高耐性。As described above, as the mixed spray film, a mixed spray film of Al 2 O 3 , Y 2 O 3 , and SiO 2 is preferable. Further, a mixed spray film of Al 2 O 3 , Y 2 O 3 , SiO 2 , and Si 3 N 4 can also be applied. Further, the adsorption electrode 146 of the electrostatic chuck 132 exhibits high resistance to a plasma containing a chlorine gas by using Ni-5Al, SUS316L, and Hastelloy.

如此，將電漿蝕刻處理(步驟2)及後處理(步驟3)進行預定次數後，重複進行乾式清理處理(步驟4)的循環後，附著於電漿蝕刻裝置30的腔室104內的沉積物(堆積物)開始產生剝離。因此，將這種循環重複預定次數後，開放腔室104進行腔室濕式清理(步驟5)。腔室濕式清理，藉由將沉積物以酒精擦拭、或以特殊藥液來洗淨等進行。Thus, after the plasma etching process (step 2) and the post-treatment (step 3) are performed a predetermined number of times, the deposition in the chamber 104 of the plasma etching apparatus 30 is repeated after repeating the cycle of the dry cleaning process (step 4). The substance (stack) begins to peel off. Therefore, after repeating this cycle for a predetermined number of times, the chamber 104 is opened for wet cleaning of the chamber (step 5). The chamber is wet-cleaned by wiping the deposit with alcohol or washing with a special chemical solution.

如同以上，電漿蝕刻裝置30具有：構成載置成為電漿處理的對象的基板S的基板載置台130的載置面的靜電夾盤132的絕緣層145。絕緣層145藉由氧化鋁、氧化釔及矽化合物形成。又，電漿蝕刻裝置30具有：設於絕緣層145內，藉由施加預定的電壓來吸附基板S的吸附電極146。吸附電極146以含鎳金屬形成。藉此，電漿蝕刻裝置30，即便是進行乾式清理的情形，也能夠發揮提高對基板載置台130的電漿的耐性的效果。其結果，電漿蝕刻裝置30，其腔室內的沉積物(堆積物)能藉由乾式清理除去，能夠顯著地延長開放腔室進行的腔室清理的週期(亦即維護循環)。As described above, the plasma etching apparatus 30 has the insulating layer 145 which comprises the electrostatic chuck 132 which mounts the mounting surface of the board|substrate mounting base 130 of the board|substrate S which is the object of a plasma processing. The insulating layer 145 is formed of aluminum oxide, cerium oxide, and cerium compound. Further, the plasma etching apparatus 30 has an adsorption electrode 146 which is provided in the insulating layer 145 and adsorbs the substrate S by applying a predetermined voltage. The adsorption electrode 146 is formed of a nickel-containing metal. Thereby, the plasma etching apparatus 30 can exhibit the effect of improving the resistance to the plasma of the substrate mounting table 130 even in the case of dry cleaning. As a result, the plasma etching apparatus 30, in which deposits (stacks) in the chamber can be removed by dry cleaning, can significantly prolong the period of chamber cleaning (i.e., maintenance cycle) performed by the open chamber.

又，電漿蝕刻裝置30，進行含氯氣體的電漿所致的電漿蝕刻處理。吸附電極146以含鎳金屬形成。例如，吸附電極146藉由Ni－5Al、SUS316L、哈氏合金(Hastelloy)的任一者形成。藉此，吸附電極146因為乾式清理時的對含氯氣體的電漿具有耐性，即便進行乾式清理也能夠保靜電夾盤的壽命。Further, the plasma etching apparatus 30 performs a plasma etching treatment by a plasma containing a chlorine gas. The adsorption electrode 146 is formed of a nickel-containing metal. For example, the adsorption electrode 146 is formed by any of Ni-5Al, SUS316L, and Hastelloy. Thereby, the adsorption electrode 146 is resistant to the plasma containing chlorine gas during dry cleaning, and the life of the electrostatic chuck can be maintained even by dry cleaning.

又，電漿蝕刻裝置30，其絕緣層145藉由相對於吸附電極146成為基板S側的上部絕緣層145a、及相對於吸附電極146成為基板S的相反側的下部絕緣層145b形成。接著，電漿蝕刻裝置30僅在下部絕緣層145b進行封孔構件所致的封孔處理。藉此，電漿蝕刻裝置30，能夠抑制乾式清理時從封孔構件的粒子的產生。Further, in the plasma etching apparatus 30, the insulating layer 145 is formed by the upper insulating layer 145a on the substrate S side with respect to the adsorption electrode 146 and the lower insulating layer 145b on the opposite side of the substrate S with respect to the adsorption electrode 146. Next, the plasma etching apparatus 30 performs the sealing treatment by the sealing member only on the lower insulating layer 145b. Thereby, the plasma etching apparatus 30 can suppress the generation of the particles from the plugging member at the time of dry cleaning.

又，處理系統100，在電漿蝕刻裝置30的蝕刻處理中，以生成的反應生成物能夠進行乾式清理的方式，將處理基板S的處理氣體，僅設為蝕刻氣體的含氯氣體，例如Cl2 氣體。接著，處理系統100，從前，在分別設置的後處理裝置40進行在蝕刻後於相同腔室內用以進行的腐蝕抑制的O2 氣體或O2 氣體及含氟氣體的電漿處理。因此，在電漿蝕刻裝置30中，於電漿蝕刻處理時不產生蒸氣壓低的AlOx及AlFx，在腔室產生的堆積物(堆積物)僅成為蒸氣壓高的AlClx。因此，電漿蝕刻裝置30，其腔室內的堆積物(堆積物)自體比從前還要減少，同時腔室內的堆積物(堆積物)能藉由乾式清理除去。其結果，處理系統100，能夠顯著地延長開放電漿蝕刻裝置30的腔室而進行的腔室清理的週期(亦即維護循環)。Further, in the etching process of the plasma etching apparatus 30, the processing system 100 can perform the dry cleaning of the generated reaction product, and the processing gas of the processing substrate S is only a chlorine-containing gas of an etching gas, such as Cl. 2 gas. Next, the processing system 100 previously performs plasma treatment of O 2 gas or O 2 gas and fluorine-containing gas for corrosion suppression performed in the same chamber after etching in the separately disposed after-treatment device 40. Therefore, in the plasma etching apparatus 30, AlOx and AlFx having a low vapor pressure are not generated during the plasma etching treatment, and deposits (deposits) generated in the chamber are only AlClx having a high vapor pressure. Therefore, in the plasma etching apparatus 30, the deposit (deposit) in the chamber is reduced from the previous body, and the deposit (deposit) in the chamber can be removed by dry cleaning. As a result, the processing system 100 can significantly extend the period of chamber cleaning (i.e., maintenance cycle) performed by opening the chamber of the plasma etching apparatus 30.

＜第2實施形態＞
接著，說明有關第2實施形態。在本實施形態中，以圖1所示的形成基板S的閘極電極6或遮光層2時的Mo系材料膜的蝕刻處理為例說明。此外，用來形成閘極電極6或遮光層2的Mo系材料膜的蝕刻時，在其上形成具有預定圖案的光阻膜(圖未示)，並將其作為遮罩進行電漿蝕刻。<Second embodiment>
Next, a second embodiment will be described. In the present embodiment, an etching process of the Mo-based material film when the gate electrode 6 or the light-shielding layer 2 of the substrate S is formed as shown in FIG. 1 will be described as an example. Further, in the etching of the Mo-based material film for forming the gate electrode 6 or the light shielding layer 2, a photoresist film (not shown) having a predetermined pattern is formed thereon, and plasma etching is performed as a mask.

[用於第2實施形態的處理系統及電漿蝕刻裝置的裝置構成]
最先說明關於用於第2實施形態的處理系統及電漿蝕刻裝置等的裝置構成。圖10為表示用來實施本實施形態的處理方法的處理系統的概略平面圖。圖11為表示搭載於圖10的處理系統的電漿蝕刻裝置的剖面圖。[Device configuration of the processing system and plasma etching apparatus used in the second embodiment]
First, the configuration of the apparatus used in the processing system, the plasma etching apparatus, and the like according to the second embodiment will be described. Fig. 10 is a schematic plan view showing a processing system for carrying out the processing method of the embodiment. Fig. 11 is a cross-sectional view showing a plasma etching apparatus mounted in the processing system of Fig. 10;

如圖10所示，處理系統200基本上作為與圖2的處理系統100一樣的多腔室型的處理系統而構成。本實施形態的處理系統200除了取代2個電漿蝕刻裝置30、及後處理裝置40，設置3個電漿蝕刻裝置90以外，與圖2的處理系統100具有一樣的構成。因為其他的構成與圖2一樣，附加相同符號省略說明。As shown in FIG. 10, processing system 200 is constructed substantially as a multi-chamber type processing system as processing system 100 of FIG. The processing system 200 of the present embodiment has the same configuration as the processing system 100 of FIG. 2 except that two plasma etching apparatuses 30 and a post-processing apparatus 40 are provided instead of the three plasma etching apparatuses 90. The other configurations are the same as in FIG. 2, and the same reference numerals are attached to omit the description.

電漿蝕刻裝置90為用來將基板S的Mo系材料膜蝕刻者，如圖11所示，除了取代處理氣體供應機構120而設置處理氣體供應機構220、取代靜電夾盤132而設置靜電夾盤232以外，具有與圖3的電漿蝕刻裝置30相同的構成。接著，與圖3相同者附加相同符號省略說明。The plasma etching apparatus 90 is an etcher for the Mo-based material film of the substrate S, and as shown in FIG. 11, a processing gas supply mechanism 220 is provided instead of the processing gas supply mechanism 120, and an electrostatic chuck is provided instead of the electrostatic chuck 132. Other than 232, it has the same configuration as the plasma etching apparatus 30 of Fig. 3 . The same components as those in FIG. 3 will be denoted by the same reference numerals and will not be described.

處理氣體供應機構220具有：氣體供應管221、在本體容器101的上方外側從氣體供應管221分岐的分岐管221a、221b、連接至分岐管221a，供應含氟氣體即SF6 氣體的SF6 氣體供應源222、連接至分岐管221b，作為淨化氣體及稀釋氣體供應Ar氣體、N2 氣體等不活性氣體的不活性氣體供應源223。氣體供應管221與圖3的電漿蝕刻裝置30的氣體供應管121一樣，連接至噴淋框體111的氣體流路112。含氟氣體作為蝕刻氣體及乾式清理氣體使用。此外，作為含氟氣體，除了SF6 氣體以外，也可以使用CF4 或NF3 。The processing gas supply mechanism 220 has a gas supply pipe 221, branching pipes 221a and 221b branched from the gas supply pipe 221 outside the main body container 101, and SF 6 gas connected to the branching pipe 221a to supply a fluorine-containing gas, that is, SF 6 gas. The supply source 222 is connected to the branching pipe 221b, and supplies an inert gas supply source 223 which is an inert gas such as Ar gas or N 2 gas as a purge gas and a diluent gas. The gas supply pipe 221 is connected to the gas flow path 112 of the shower frame 111 like the gas supply pipe 121 of the plasma etching apparatus 30 of FIG. The fluorine-containing gas is used as an etching gas and a dry cleaning gas. Further, as the fluorine-containing gas, in addition to the SF 6 gas, CF 4 or NF 3 may be used.

靜電夾盤232具有：由形成於基材131的表面的陶瓷溶射膜等介電體構成的絕緣層245、設於絕緣層245的內部的吸附電極246。The electrostatic chuck 232 has an insulating layer 245 made of a dielectric material such as a ceramic spray film formed on the surface of the substrate 131, and an adsorption electrode 246 provided inside the insulating layer 245.

在此，利用圖12說明關於基材131及靜電夾盤232的構成。圖12為表示第2實施形態的基材及靜電夾盤的構成的剖面圖。Here, the configuration of the base material 131 and the electrostatic chuck 232 will be described with reference to FIG. Fig. 12 is a cross-sectional view showing the structure of a substrate and an electrostatic chuck according to a second embodiment.

靜電夾盤232配置於基材131之上。基材131例如由不銹鋼形成。基材131藉由使用不銹鋼，也能夠作為高溫電極使用，也能夠在含氯氣體的電漿環境、含氟氣體的電漿環境中使用。The electrostatic chuck 232 is disposed on the substrate 131. The base material 131 is formed of, for example, stainless steel. The base material 131 can also be used as a high temperature electrode by using stainless steel, and can also be used in a plasma environment containing a chlorine gas or a plasma environment containing a fluorine gas.

靜電夾盤232具有：絕緣層245、設於絕緣層245內部的吸附電極246。絕緣層245具有：在上下方向重疊的2層上部絕緣層245a、下部絕緣層245b。在本實施形態中，絕緣層245具有：相對於吸附電極246成為基板S側的上部絕緣層245a、相對於吸附電極246成為基板S的相反側的下部絕緣層245b。The electrostatic chuck 232 has an insulating layer 245 and an adsorption electrode 246 provided inside the insulating layer 245. The insulating layer 245 has two upper insulating layers 245a and a lower insulating layer 245b that are stacked in the vertical direction. In the present embodiment, the insulating layer 245 has an upper insulating layer 245a on the substrate S side with respect to the adsorption electrode 246, and a lower insulating layer 245b on the opposite side of the substrate S with respect to the adsorption electrode 246.

上部絕緣層245a及下部絕緣層245b以混合溶射膜構成。混合溶射膜為將氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、矽化合物的混合物溶射形成者。Y2 O3 材質上電漿耐性高。再來，矽化合物因為有成為玻璃質埋入Y2 O3 及Al2 O3 之粒界而緻密化的作用，混合溶射膜對SF6 氣體等含氟氣體的電漿具有高耐性。作為混合溶射膜，較佳為作為矽化合物使用氧化矽(SiO2 )的Al2 O3 ・Y2 O3 ・SiO2 膜。又，也可以使用作為矽化合物使用氮化矽(Si3 N4 )的Al2 O3 ・Y2 O3 ・SiO2 ・Si3 N4 膜。The upper insulating layer 245a and the lower insulating layer 245b are formed by a mixed spray film. The mixed spray film is formed by dissolving a mixture of alumina (Al 2 O 3 ), yttrium oxide (Y 2 O 3 ), and ruthenium compound. The plasma resistance of the Y 2 O 3 material is high. Further, the ruthenium compound has a function of densifying the grain boundary of the grain boundary of Y 2 O 3 and Al 2 O 3 , and the mixed solution film has high resistance to a plasma of a fluorine-containing gas such as SF 6 gas. As the mixed spray film, an Al 2 O 3 , Y 2 O 3 , SiO 2 film of ruthenium oxide (SiO 2 ) is preferably used as the ruthenium compound. Further, an Al 2 O 3 , Y 2 O 3 , SiO 2 , Si 3 N 4 film using tantalum nitride (Si 3 N 4 ) as the antimony compound may be used.

其中，在本實施形態中，上部絕緣層245a與下部絕緣層245b之中，僅在下部絕緣層245b進行封孔構件所致的封孔處理。亦即，上部絕緣層245a不進行封孔處理。藉此，在上部絕緣層245a不進行封孔處理，能夠抑制進行乾式清理時的粒子的產生。In the present embodiment, among the upper insulating layer 245a and the lower insulating layer 245b, the sealing treatment by the plugging member is performed only on the lower insulating layer 245b. That is, the upper insulating layer 245a is not subjected to the sealing treatment. Thereby, the upper insulating layer 245a is not subjected to the sealing treatment, and generation of particles during dry cleaning can be suppressed.

因為未對上部絕緣層245a進行封孔處理，吸附電極246有使用對氯系氣體腐蝕少的金屬的必要。在此，吸附電極246以含鉻金屬構成。例如，吸附電極246由鉻(Cr)形成。該等鉻(Cr)相較於從前用於吸附電極的鎢(W)及鉬(Mo)，氯化物、氟化物的蒸氣壓低。Since the upper insulating layer 245a is not subjected to the sealing treatment, the adsorption electrode 246 is required to use a metal which is less corrosive to the chlorine-based gas. Here, the adsorption electrode 246 is composed of a chromium-containing metal. For example, the adsorption electrode 246 is formed of chromium (Cr). These chromium (Cr) phases have lower vapor pressures of chlorides and fluorides than tungsten (W) and molybdenum (Mo) which were previously used for adsorption electrodes.

圖13為表示蒸氣壓的一例的剖面圖。圖13表示每個鉻(Cr)、鎢(W)、鉬(Mo)的氯化物、氟化物的溫度的蒸氣壓。該等鉻(Cr)相較於鎢(W)及鉬(Mo)，氯化物、氟化物的蒸氣壓低。因此，鉻(Cr)相較於鎢(W)及鉬(Mo)，對含氟氣體的耐性高。Fig. 13 is a cross-sectional view showing an example of a vapor pressure. Fig. 13 shows the vapor pressure of the temperature of each of chromium (Cr), tungsten (W), molybdenum (Mo) chloride, and fluoride. These chromium (Cr) phases have lower vapor pressures of chlorides and fluorides than tungsten (W) and molybdenum (Mo). Therefore, chromium (Cr) has higher resistance to fluorine-containing gases than tungsten (W) and molybdenum (Mo).

又，鉻(Cr)相較於鎢(W)及鉬(Mo)，線膨脹係數接近氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )。Further, the chromium (Cr) phase has a linear expansion coefficient close to that of alumina (Al 2 O 3 ) or yttrium oxide (Y 2 O 3 ) as compared with tungsten (W) and molybdenum (Mo).

圖14為表示線膨脹係數的一例的剖面圖。圖14表示鉻(Cr)、鎢(W)、鉬(Mo)、氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )的線膨脹係數(a)。又，在鉻(Cr)、鎢(W)、鉬(Mo)表示與氧化鋁(Al2 O3 )及氧化釔(Y2 O3 )的線膨脹係數之差(Δa)。如圖14所示，鉻(Cr)相較於鎢(W)及鉬(Mo)，線膨脹係數接近氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )。藉此，靜電夾盤232藉由將吸附電極246以鉻(Cr)形成，即便成為高溫時，也難以產生絕緣層245的溶射破裂。Fig. 14 is a cross-sectional view showing an example of a linear expansion coefficient. Fig. 14 shows linear expansion coefficients (a) of chromium (Cr), tungsten (W), molybdenum (Mo), alumina (Al 2 O 3 ), and yttrium oxide (Y 2 O 3 ). Further, chromium (Cr), tungsten (W), and molybdenum (Mo) represent a difference (Δa) between linear expansion coefficients of alumina (Al 2 O 3 ) and yttrium oxide (Y 2 O 3 ). As shown in FIG. 14, the chromium (Cr) phase has a linear expansion coefficient close to that of aluminum oxide (Al 2 O 3 ) or yttrium oxide (Y 2 O 3 ) as compared with tungsten (W) and molybdenum (Mo). Thereby, the electrostatic chuck 232 is formed of chromium (Cr) by the adsorption electrode 246, and even when it is at a high temperature, it is difficult to cause the dissolution crack of the insulating layer 245.

上部絕緣層245a因為不進行封孔處理，與第1實施形態的上部絕緣層145a同樣，藉由準緻密混合溶射來緻密地溶射較佳。Since the upper insulating layer 245a is not subjected to the sealing treatment, it is preferably densely dispersed by quasi-dense mixing and spraying as in the upper insulating layer 145a of the first embodiment.

吸附電極246能夠取板狀、膜狀、格子狀、網狀等各種形態。吸附電極246通過供電線147連接直流電源148，對吸附電極246施加直流電壓。向吸附電極246的供電以開關(圖未示)進行開啟關閉。藉由對吸附電極246施加直流電壓，產生庫倫力造成的靜電吸附力吸附基板S。The adsorption electrode 246 can take various forms such as a plate shape, a film shape, a lattice shape, and a mesh shape. The adsorption electrode 246 is connected to the DC power source 148 via a power supply line 147, and a DC voltage is applied to the adsorption electrode 246. The power supply to the adsorption electrode 246 is turned on and off by a switch (not shown). The substrate S is adsorbed by the electrostatic adsorption force caused by the Coulomb force by applying a DC voltage to the adsorption electrode 246.

靜電夾盤232的絕緣層245以將氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、及矽化合物的混合物溶射形成的混合溶射膜、或Y2 O3 構成。又，靜電夾盤232的吸附電極246以鉻(Cr)構成。構成絕緣層245的氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、與矽化合物的混合物、及Y2 O3 、還有構成吸附電極246的Al，對氟系氣體SF6 的電漿具有高耐性。The insulating layer 245 of the electrostatic chuck 232 is composed of a mixed solvent film formed by spraying a mixture of alumina (Al 2 O 3 ), yttrium oxide (Y 2 O 3 ), and a ruthenium compound, or Y 2 O 3 . Further, the adsorption electrode 246 of the electrostatic chuck 232 is made of chromium (Cr). Alumina (Al 2 O 3 ), yttrium oxide (Y 2 O 3 ), a mixture with a ruthenium compound, and Y 2 O 3 , and also Al constituting the adsorption electrode 246, and a fluorine-based gas SF 6 The plasma has high resistance.

[第2實施形態的電漿處理方法]
接著，參照圖15的流程圖說明關於以上的處理系統200進行的第2實施形態的電漿處理方法。圖15為表示第2實施形態的電漿處理方法的流程圖。[The plasma processing method of the second embodiment]
Next, a plasma processing method according to a second embodiment performed by the above processing system 200 will be described with reference to a flowchart of Fig. 15 . Fig. 15 is a flow chart showing a plasma processing method according to a second embodiment.

其中，藉由處理系統200，進行在基板S形成Mo系材料膜，例如Mo膜或MoW膜的電漿蝕刻處理。Among them, the plasma etching process of forming a Mo-based material film, for example, a Mo film or a MoW film, on the substrate S is performed by the processing system 200.

最先，在電漿蝕刻裝置90的電漿蝕刻處理中，以使生成的反應生成物為可乾式清理之物的方式，選定處理氣體(步驟11)。First, in the plasma etching treatment of the plasma etching apparatus 90, the processing gas is selected so that the generated reaction product is a dry-cleanable material (step 11).

具體來說，在本實施形態中作為處理氣體選定含氟氣體即SF6 氣體。圖16為表示作為處理氣體使用SF6 氣體將Mo系材料膜蝕刻時的在腔室內生成的反應生成物的概略圖。使用SF6 氣體將Mo膜及MoW膜這種Mo系材料膜進行電漿蝕刻時，如圖16所示，作為反應生成物主要生成MoFx，雖該等的一部分附著於腔室壁成為沉積物(堆積物)，但MoFx蒸氣壓高能以乾式清理除去。Specifically, in the present embodiment, SF 6 gas which is a fluorine-containing gas is selected as the processing gas. FIG. 16 is a schematic view showing a reaction product generated in a chamber when a Mo-based material film is etched using SF 6 gas as a processing gas. When a Mo-based material film such as a Mo film or a MoW film is plasma-etched using SF 6 gas, as shown in FIG. 16 , MoFx is mainly generated as a reaction product, and some of these adhere to the chamber wall to form a deposit ( Deposit), but the MoFx vapor pressure can be removed by dry cleaning.

圖17為表示作為處理氣體使用SF6 氣體及O2 氣體將Mo系材料膜蝕刻時的在腔室內生成的反應生成物的概略圖。另一方面，如同從前，將Mo系材料膜利用SF6 氣體及O2 氣體進行蝕刻時，如圖17所示，作為反應生成物除了MoFx以外，也生成MoFxOy及MoOx。在該等之中，因為MoOx蒸氣壓低不會揮發，容易附著於腔室壁而成為堆積物(堆積)。接著，堆積物即MoOx剝離後成為粒子的原因，對製品造成壞影響。又，因為MoOx安定性高，難以在乾式清理中除去。FIG. 17 is a schematic view showing a reaction product generated in a chamber when a Mo-based material film is etched using SF 6 gas and O 2 gas as a processing gas. On the other hand, when the Mo-based material film is etched by SF 6 gas or O 2 gas, as shown in FIG. 17 , MoFxOy and MoOx are generated as a reaction product in addition to MoFx. Among these, since the MoOx vapor pressure is low, it does not volatilize, and it is easy to adhere to the chamber wall and become a deposit (stacking). Next, the deposit, that is, the cause of the separation of MoOx into particles, causes a bad influence on the product. Also, since MoOx has high stability, it is difficult to remove it in dry cleaning.

在此，於本實施形態中，為了在腔室內作為反應生成物生成能乾式清理的MoFx，而不生成成為粒子的原因在乾式清理中難以除去的MoOx，將電漿蝕刻裝置90中的基板S的處理氣體設為僅有含氟氣體即SF6 氣體。Here, in the present embodiment, in order to generate the dry-cleanable MoFx as a reaction product in the chamber, and not to generate MoOx which is difficult to remove in the dry cleaning due to the particles, the substrate S in the plasma etching apparatus 90 is used. The treatment gas is set to be a fluorine-containing gas, that is, SF 6 gas.

藉此選定電漿蝕刻時的處理氣體後，對形成於基板S的Mo材料膜，藉由電漿蝕刻裝置90，利用預先選定的處理氣體即SF6 氣體施予電漿蝕刻處理(步驟12)。After the processing gas at the time of plasma etching is selected, the Mo material film formed on the substrate S is subjected to plasma etching treatment by the plasma etching apparatus 90 using SF 6 gas which is a predetermined processing gas (step 12). .

以下，具體說明關於步驟12的電漿蝕刻處理。
從載體50藉由搬送機構60將基板S取出，並搬送至裝載鎖定室20，真空搬送室10內的真空搬送機構70從裝載鎖定室20接收基板S並向電漿蝕刻裝置90搬送。Hereinafter, the plasma etching treatment with respect to step 12 will be specifically described.
The substrate S is taken out from the carrier 50 by the transport mechanism 60 and transported to the load lock chamber 20, and the vacuum transfer mechanism 70 in the vacuum transfer chamber 10 receives the substrate S from the load lock chamber 20 and transports it to the plasma etching apparatus 90.

在電漿蝕刻裝置90中，首先，將腔室104內調整成適合真空搬送室10的壓力，將閘閥G開放從搬入出口155藉由真空搬送機構70將基板S搬入腔室104內，在基板載置台130上使基板S載置。使真空搬送機構70從腔室104退避後，將閘閥G關閉。In the plasma etching apparatus 90, first, the inside of the chamber 104 is adjusted to a pressure suitable for the vacuum transfer chamber 10, and the gate valve G is opened from the carry-in port 155, and the substrate S is carried into the chamber 104 by the vacuum transfer mechanism 70. The substrate S is placed on the mounting table 130. After the vacuum transfer mechanism 70 is retracted from the chamber 104, the gate valve G is closed.

在該狀態下，藉由自動壓力控制閥門(APC)162將腔室104內的壓力調整成預定的真空度，同時從處理氣體供應機構220通過噴淋框體111，作為處理氣體供應含氟氣體即SF6 氣體至腔室104內。除了SF6 氣體以外，作為稀釋氣體供應Ar氣體等不活性氣體也可以。In this state, the pressure in the chamber 104 is adjusted to a predetermined degree of vacuum by the automatic pressure control valve (APC) 162, while the fluorine gas is supplied as a processing gas from the processing gas supply mechanism 220 through the shower frame 111. That is, SF 6 gas is introduced into the chamber 104. In addition to the SF 6 gas, an inert gas such as an Ar gas may be supplied as a diluent gas.

此時，基板S藉由靜電夾盤232吸附，藉由調溫機構(圖未示)調溫。At this time, the substrate S is adsorbed by the electrostatic chuck 232, and is tempered by a temperature adjustment mechanism (not shown).

接著，從高頻電源115將例如13.56MHz的高頻施加至高頻天線113，藉此通過介電體壁102在腔室104內形成均勻的感應電場。藉由以此形成的感應電場，生成含氟氣體即SF6 氣體的電漿。藉由以此生成的高密度感應耦合電漿，蝕刻基板S的Mo系材料膜。Next, a high frequency such as 13.56 MHz is applied from the high frequency power source 115 to the high frequency antenna 113, whereby a uniform induced electric field is formed in the chamber 104 through the dielectric body wall 102. A plasma of a fluorine-containing gas, that is, SF 6 gas, is generated by the induced electric field formed thereby. The Mo-based material film of the substrate S is etched by the high-density inductively coupled plasma generated thereby.

此時，在電漿蝕刻裝置90中，如同上述作為反應生成物生成MoFx，附著於腔室104內的壁部等。另一方面，幾乎不生成MoOx。At this time, in the plasma etching apparatus 90, as described above, MoFx is generated as a reaction product, and adheres to a wall portion or the like in the chamber 104. On the other hand, almost no MoOx is generated.

在電漿蝕刻裝置90進行步驟12的電漿蝕刻處理後，將基板S藉由真空搬送機構70取出，搬送至裝載鎖定室20，藉由搬送機構60返回至載體50。After the plasma etching apparatus 90 performs the plasma etching process of step 12, the substrate S is taken out by the vacuum transfer mechanism 70, transferred to the load lock chamber 20, and returned to the carrier 50 by the transfer mechanism 60.

將以上那種步驟12的電漿蝕刻處理進行1次或2次以上的預定次數後，進行電漿蝕刻裝置90的腔室104內的乾式清理處理(步驟13)。After the plasma etching treatment of the above step 12 is performed once or twice or more, a dry cleaning process in the chamber 104 of the plasma etching apparatus 90 is performed (step 13).

乾式清理，在基板載置台130上未載置基板S的狀態下，在腔室104內作為乾式清理氣體與電漿蝕刻時的蝕刻氣體一樣，供應含氟氣體即SF6 氣體，藉由與電漿蝕刻時同樣的感應耦合電漿進行。In the dry cleaning, in the state where the substrate S is not placed on the substrate mounting table 130, the dry cleaning gas in the chamber 104 is supplied with the fluorine gas, that is, the SF 6 gas, as the etching gas during the plasma etching. The same inductively coupled plasma is used during slurry etching.

藉由該乾式清理，能夠將附著於電漿蝕刻裝置90的腔室104的MoFx除去。亦即，在電漿蝕刻裝置90中，作為蝕刻氣體因為未含有從前使用的O2 氣體，作為反應生成物不會生成難以藉由乾式清理除去的MoOx，能進行乾式清理。By this dry cleaning, MoFx adhering to the chamber 104 of the plasma etching apparatus 90 can be removed. In other words, in the plasma etching apparatus 90, since the etching gas does not contain the O 2 gas used in the past, it is possible to perform dry cleaning without generating MoOx which is difficult to remove by dry cleaning as a reaction product.

又，乾式清理時，因為在基板載置台130上未載置基板S，在靜電夾盤232不存在基板S，乾式清理氣體即SF6 氣體的電漿會直接對靜電夾盤232作用。Further, in the dry cleaning, since the substrate S is not placed on the substrate stage 130, and the substrate S is not present in the electrostatic chuck 232, the plasma of the dry cleaning gas, that is, the SF 6 gas, directly acts on the electrostatic chuck 232.

從前，因為在電漿蝕刻裝置不進行乾式清理，不會在靜電夾盤不載置基板S的狀態下進行電漿處理，靜電夾盤作為絕緣層以Y2 O3 及Al2 O3 的溶射膜，作為吸附電極使用W及Mo就足夠了。但是，乾式清理時即便含氟氣體即SF6 氣體電漿對靜電夾盤直接作用，絕緣層即Y2 O3 及Al2 O3 的溶射膜具有耐性，但溶射膜的封孔處理材被電漿除去，電漿及含氟氣體到達吸附面後，吸附電極的W及Mo被破壞，判明靜電夾盤的壽命會有縮短之虞。為了解消該問題，雖考慮到在乾式清理時，以在基板載置台130上載置測試基板即素玻璃的狀態下進行乾式清理，但此時發生將素玻璃對電漿蝕刻裝置90進行搬入/搬出的工程，生產性會降低。In the past, since the plasma etching apparatus was not subjected to dry cleaning, plasma treatment was not performed in a state where the electrostatic chuck was not placed on the substrate S, and the electrostatic chuck was used as an insulating layer to dissolve Y 2 O 3 and Al 2 O 3 . It is sufficient to use W and Mo as the adsorption electrode. However, in the dry cleaning, even if the fluorine-containing gas, that is, the SF 6 gas plasma acts directly on the electrostatic chuck, the insulating layer, that is, the spray film of Y 2 O 3 and Al 2 O 3 , has resistance, but the sealing film of the spray film is electrically charged. After the slurry is removed, the plasma and the fluorine-containing gas reach the adsorption surface, and the W and Mo of the adsorption electrode are destroyed, and it is found that the life of the electrostatic chuck is shortened. In order to solve this problem, it is considered that dry cleaning is performed in a state in which the test substrate, that is, plain glass, is placed on the substrate mounting table 130 during dry cleaning, but in this case, the plasma etching device 90 is carried in and out. Engineering, production will be reduced.

在這裡，在本實施形態中，作為靜電夾盤232的吸附電極246，使用含鉻金屬。例如，在本實施形態中，作為吸附電極246，使用鉻(Cr)。因為Cr相較於W及Mo，對含氟氣體即SF6 氣體的電漿的耐性高，不在乾式清理時載置素玻璃，能夠保持所期望的壽命。Here, in the present embodiment, a chromium-containing metal is used as the adsorption electrode 246 of the electrostatic chuck 232. For example, in the present embodiment, chromium (Cr) is used as the adsorption electrode 246. Since the Cr phase is more resistant to the plasma of the fluorine-containing gas, that is, the SF 6 gas than the W and Mo, it does not mount the glass at the time of dry cleaning, and the desired life can be maintained.

又，溶射氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、及矽化合物的混合物形成的混合溶射膜、及Y2 O3 ，因為對含氟氣體即SF6 氣體的電漿耐性高，除了作為吸附電極246使用Cr以外，藉由作為絕緣層245使用混合溶射膜或Y2 O3 ，能夠更加提高對SF6 氣體的電漿的耐性。Further, a mixed spray film of a mixture of molten alumina (Al 2 O 3 ), yttrium oxide (Y 2 O 3 ), and a ruthenium compound, and Y 2 O 3 , because of a plasma of a fluorine-containing gas, that is, SF 6 gas The resistance is high. In addition to the use of Cr as the adsorption electrode 246, by using a mixed spray film or Y 2 O 3 as the insulating layer 245, the resistance to the plasma of the SF 6 gas can be further improved.

如此，將電漿蝕刻處理(步驟12)進行預定次數後，重複進行乾式清理(步驟13)的循環後，附著於電漿蝕刻裝置90的腔室104內的沉積物(堆積物)開始產生剝離。因此，將這種循環重複預定次數後，開放腔室104進行腔室濕式清理(步驟14)。腔室濕式清理，藉由將沉積物以酒精擦拭、或以特殊藥液來洗淨等進行。After the plasma etching treatment (step 12) is performed for a predetermined number of times, the cycle of the dry cleaning (step 13) is repeated, and the deposit (deposit) adhering to the chamber 104 of the plasma etching apparatus 90 starts to peel off. . Therefore, after repeating this cycle for a predetermined number of times, the chamber 104 is opened for wet cleaning of the chamber (step 14). The chamber is wet-cleaned by wiping the deposit with alcohol or washing with a special chemical solution.

如同以上，電漿蝕刻裝置30，進行含氟氣體的電漿進行的電漿蝕刻處理。吸附電極246以含鉻金屬形成。例如，吸附電極246由鉻(Cr)形成。藉此，吸附電極246因為乾式清理時的對含氟氣體的電漿具有耐性，即便進行乾式清理也能夠保靜電夾盤132的壽命。又，因為作為靜電夾盤232的絕緣層245使用混合溶射膜，能夠更加提高對含氟氣體即SF6 氣體的電漿的耐性。As described above, the plasma etching apparatus 30 performs a plasma etching treatment of a plasma of a fluorine-containing gas. The adsorption electrode 246 is formed of a chromium-containing metal. For example, the adsorption electrode 246 is formed of chromium (Cr). Thereby, the adsorption electrode 246 is resistant to the fluorine-containing gas plasma during dry cleaning, and the life of the electrostatic chuck 132 can be maintained even by dry cleaning. Moreover, since the mixed solvent film is used as the insulating layer 245 of the electrostatic chuck 232, the resistance to the plasma of the fluorine-containing gas SF 6 gas can be further improved.

又，處理系統100，在電漿蝕刻裝置90的蝕刻處理中，以生成的反應生成物能夠進行乾式清理的方式，將基板S蝕刻的氣體，僅設為含氟氣體即SF6 氣體，而不使用從前與SF6 氣體一同使用的O2 氣體。因此，在電漿蝕刻裝置90中，於電漿蝕刻處理時不產生蒸氣壓低的MoOx，在腔室產生的堆積物(堆積物)僅成為蒸氣壓高的MoFx。因此，電漿蝕刻裝置90，其腔室內的堆積物(堆積物)自體比從前還要減少，同腔室內的堆積物(堆積物)能藉由乾式清理除去。其結果，處理系統100，能夠顯著地延長開放電漿蝕刻裝置90的腔室而進行的腔室清理的週期，亦即維護循環。Further, in the etching process of the plasma etching apparatus 90, in the etching process in which the generated reaction product can be dry-cleaned, the gas etched by the substrate S is only SF 6 gas which is a fluorine-containing gas, and is not O 2 gas used previously with SF 6 gas was used. Therefore, in the plasma etching apparatus 90, MoOx having a low vapor pressure is not generated during the plasma etching treatment, and deposits (deposits) generated in the chamber are only MoFx having a high vapor pressure. Therefore, in the plasma etching apparatus 90, the deposit (deposit) in the chamber is reduced from the previous body, and the deposit (deposit) in the same chamber can be removed by dry cleaning. As a result, the processing system 100 can significantly extend the period of chamber cleaning performed by opening the chamber of the plasma etching apparatus 90, that is, the maintenance cycle.

＜其他適用＞
此外，本發明並不限定於上述實施形態，在本發明的思想範圍內可有各種變形。例如，在上述實施形態中，雖說明關於用於形成TFT的源極電極及汲極電極的適用含Al金屬膜的蝕刻、及用於形成遮光膜或閘極電極的適用Mo系材料膜的蝕刻之例，但不限於此，在電漿蝕刻裝置的電漿蝕刻處理中，生成的反應生成物能夠使用可乾式清理的處理氣體即可。<Other applicable>
Further, the present invention is not limited to the above embodiment, and various modifications are possible within the scope of the inventive concept. For example, in the above embodiment, the etching of the Al-containing metal film for forming the source electrode and the drain electrode of the TFT, and the etching of the applicable Mo-based material film for forming the light-shielding film or the gate electrode will be described. For example, the present invention is not limited thereto, and in the plasma etching treatment of the plasma etching apparatus, the generated reaction product may be a dry-processable processing gas.

又，在上述實施形態中，作為清理氣體雖示出使用與電漿蝕刻時的蝕刻氣體相同之例，但清理氣體為與蝕刻氣體不同者也可以。Further, in the above embodiment, the cleaning gas is the same as the etching gas used in the plasma etching, but the cleaning gas may be different from the etching gas.

再來，上述實施形態中，作為電漿蝕刻裝置雖示出使用感應耦合電漿蝕刻裝置之例，但不限於此，是電容耦合電漿蝕刻裝置及微波電漿蝕刻裝置等其他電漿蝕刻裝置也可以。In the above embodiment, the plasma etching apparatus is an example of using an inductively coupled plasma etching apparatus. However, the present invention is not limited thereto, and is another plasma etching apparatus such as a capacitive coupling plasma etching apparatus and a microwave plasma etching apparatus. Also.

1‧‧‧玻璃基板1‧‧‧ glass substrate

2‧‧‧遮光層 2‧‧‧ shading layer

4‧‧‧多晶矽膜 4‧‧‧Polysilicon film

5‧‧‧閘門絕緣膜 5‧‧‧gate insulation film

6‧‧‧閘極電極 6‧‧‧Gate electrode

7‧‧‧層間絕緣膜 7‧‧‧Interlayer insulating film

8a‧‧‧源極電極 8a‧‧‧Source electrode

8b‧‧‧汲極電極 8b‧‧‧汲electrode

10‧‧‧真空搬送室 10‧‧‧vacuum transfer room

20‧‧‧裝載鎖定室 20‧‧‧Load lock room

30、90‧‧‧電漿蝕刻裝置 30, 90‧‧‧ Plasma etching equipment

40‧‧‧後處理裝置 40‧‧‧Reprocessing device

50‧‧‧載體 50‧‧‧ Carrier

60‧‧‧搬送機構 60‧‧‧Transportation agency

70‧‧‧真空搬送機構 70‧‧‧Vacuum transport mechanism

80‧‧‧控制部 80‧‧‧Control Department

100、200‧‧‧處理系統 100, 200‧‧‧ processing system

101‧‧‧本體容器 101‧‧‧ body container

102‧‧‧介電體壁 102‧‧‧ dielectric wall

104‧‧‧腔室 104‧‧‧ chamber

111‧‧‧噴淋框體 111‧‧‧Spray frame

113‧‧‧高頻天線 113‧‧‧High frequency antenna

115、153‧‧‧高頻電源 115, 153‧‧‧ high frequency power supply

120、120’、220‧‧‧處理氣體供應機構 120, 120', 220‧‧‧ process gas supply

130‧‧‧基板載置台 130‧‧‧Substrate mounting table

130‧‧‧‧‧‧基材 130‧‧‧‧‧‧Substrate

132、232‧‧‧靜電夾盤 132, 232‧‧‧Electrical chuck

145、245‧‧‧絕緣層 145, 245‧‧‧ insulation

145a、245a‧‧‧上部絕緣層 145a, 245a‧‧‧ upper insulation

145b、245b‧‧‧下部絕緣層 145b, 245b‧‧‧ lower insulation layer

146、246‧‧‧吸附電極 146, 246‧‧ ‧ adsorption electrode

160‧‧‧排氣部 160‧‧‧Exhaust Department

S‧‧‧基板 S‧‧‧Substrate

[圖1] 圖1為表示適用本發明的實施形態的電漿處理方法的被處理體的構造的剖面圖。Fig. 1 is a cross-sectional view showing the structure of a target object to which a plasma processing method according to an embodiment of the present invention is applied.

[圖2] 圖2為表示用來實施第1實施形態的處理方法的處理系統的概略平面圖。 Fig. 2 is a schematic plan view showing a processing system for carrying out the processing method of the first embodiment.

[圖3] 圖3為表示搭載於圖2的處理系統的電漿蝕刻裝置的剖面圖。 Fig. 3 is a cross-sectional view showing a plasma etching apparatus mounted in the processing system of Fig. 2;

[圖4] 圖4為表示第1實施形態的基材及靜電夾盤的構成的剖面圖。 Fig. 4 is a cross-sectional view showing the configuration of a substrate and an electrostatic chuck according to the first embodiment.

[圖5] 圖5為表示對金屬的氯系氣體的耐性的一例的圖。 FIG. 5 is a view showing an example of resistance to a metal chlorine-based gas.

[圖6] 圖6為表示搭載於圖2的處理系統的後處理裝置的概略圖。 Fig. 6 is a schematic view showing a post-processing apparatus mounted in the processing system of Fig. 2;

[圖7] 圖7為表示第1實施形態的電漿處理方法的流程圖。 Fig. 7 is a flow chart showing a plasma processing method according to a first embodiment.

[圖8] 圖8為表示作為處理氣體使用Cl2 氣體將含Al金屬膜蝕刻時的在腔室內生成的反應生成物的概略圖。[Fig. 8] Fig. 8 is a schematic view showing a reaction product generated in a chamber when an Al-containing metal film is etched using a Cl 2 gas as a processing gas.

[圖9] 圖9為表示作為處理氣體使用Cl2 氣體將含Al金屬膜蝕刻後，利用O2 氣體、或O2 氣體及CF4 氣體進行後處理時的在腔室內生成的反應生成物的概略圖。[Fig. 9] Fig. 9 is a view showing a reaction product formed in a chamber when an Al-containing metal film is etched using a Cl 2 gas as a processing gas, and then post-treated by O 2 gas or O 2 gas and CF 4 gas. Schematic diagram.

[圖10] 圖10為表示用來實施第2實施形態的處理方法的處理系統的概略平面圖。 Fig. 10 is a schematic plan view showing a processing system for carrying out the processing method of the second embodiment.

[圖11] 圖11為表示搭載於圖11的處理系統的電漿蝕刻裝置的剖面圖。 Fig. 11 is a cross-sectional view showing a plasma etching apparatus mounted in the processing system of Fig. 11 .

[圖12] 圖12為表示第2實施形態的基材及靜電夾盤的構成的剖面圖。 Fig. 12 is a cross-sectional view showing the configuration of a substrate and an electrostatic chuck according to a second embodiment.

[圖13] 圖13為表示蒸氣壓的一例的剖面圖。 Fig. 13 is a cross-sectional view showing an example of a vapor pressure.

[圖14] 圖14為表示線膨脹係數的一例的剖面圖。 Fig. 14 is a cross-sectional view showing an example of a linear expansion coefficient.

[圖15] 圖15為表示第2實施形態的電漿處理方法的流程圖。 Fig. 15 is a flow chart showing a plasma processing method according to a second embodiment.

[圖16] 圖16為表示作為處理氣體使用SF6 氣體將Mo系材料膜蝕刻時的在腔室內生成的反應生成物的概略圖。[Fig. 16] Fig. 16 is a schematic view showing a reaction product generated in a chamber when a Mo-based material film is etched using SF 6 gas as a processing gas.

[圖17] 圖17為表示作為處理氣體使用SF6 氣體及O2 氣體將Mo系材料膜蝕刻時的在腔室內生成的反應生成物的概略圖。[FIG. 17] FIG. 17 is a schematic view showing a reaction product generated in a chamber when a Mo-based material film is etched using SF 6 gas and O 2 gas as a processing gas.

Claims (6)

一種電漿處理裝置，具有：構成載置成為電漿處理的對象的被處理體的載置台的載置面，並由氧化鋁、氧化釔及矽化合物形成的絕緣層； 設於前述絕緣層內，由含鎳金屬或含鉻金屬形成，藉由施加預定的電壓來吸附被處理體的吸附電極。A plasma processing apparatus comprising: an insulating layer formed of a surface on which a substrate to be processed which is a target of plasma processing is placed, and which is formed of alumina, yttria and a ytterbium compound; The insulating layer is formed of a nickel-containing metal or a chromium-containing metal, and a predetermined voltage is applied to adsorb the adsorption electrode of the object to be processed. 如請求項1記載的電漿處理裝置，其中，前述電漿處理為藉由含氯氣體的電漿進行的電漿蝕刻處理，前述吸附電極由含鎳金屬形成。The plasma processing apparatus according to claim 1, wherein the plasma treatment is a plasma etching treatment by a plasma containing a chlorine gas, and the adsorption electrode is formed of a nickel-containing metal. 如請求項1記載的電漿處理裝置，其中，前述電漿處理為藉由含氟氣體的電漿進行的電漿蝕刻處理，前述吸附電極由含鉻金屬形成。The plasma processing apparatus according to claim 1, wherein the plasma treatment is a plasma etching treatment by a plasma of a fluorine-containing gas, and the adsorption electrode is formed of a chromium-containing metal. 如請求項2記載的電漿處理裝置，其中，前述吸附電極藉由Ni－5Al、SUS316L、哈氏合金(Hastelloy)的任一者形成。The plasma processing apparatus according to claim 2, wherein the adsorption electrode is formed of any one of Ni-5Al, SUS316L, and Hastelloy. 如請求項1至4中任1項記載的電漿處理裝置，其中，前述絕緣層藉由：相對於前述吸附電極成為前述被處理體側的上部絕緣層、及相對於前述吸附電極成為前述被處理體的相反側的下部絕緣層形成，僅在下部絕緣層進行封孔構件所致的封孔處理。The plasma processing apparatus according to any one of claims 1 to 4, wherein the insulating layer is an upper insulating layer on the side of the object to be processed with respect to the adsorption electrode, and is formed on the adsorption electrode with respect to the adsorption electrode. The lower insulating layer on the opposite side of the processing body is formed, and the sealing treatment by the sealing member is performed only on the lower insulating layer. 如請求項1至4中任1項記載的電漿處理裝置，更具有：支持前述絕緣層，藉由不銹鋼形成的基材。The plasma processing apparatus according to any one of claims 1 to 4, further comprising: a substrate formed of stainless steel that supports the insulating layer.
TW107139129A 2017-11-17 2018-11-05 Plasma treatment device TWI789450B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017222282A JP6967944B2 (en) 2017-11-17 2017-11-17 Plasma processing equipment
JP2017-222282 2017-11-17

Publications (2)

Publication Number Publication Date
TW201933471A true TW201933471A (en) 2019-08-16
TWI789450B TWI789450B (en) 2023-01-11

Family

ID=66556286

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107139129A TWI789450B (en) 2017-11-17 2018-11-05 Plasma treatment device

Country Status (4)

Country Link
JP (1) JP6967944B2 (en)
KR (1) KR102165704B1 (en)
CN (1) CN109801827B (en)
TW (1) TWI789450B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7228539B2 (en) * 2019-06-28 2023-02-24 株式会社東芝 switch device
JP2022024265A (en) * 2020-07-13 2022-02-09 東京エレクトロン株式会社 Substrate detachment method and plasma processing device
KR20240031248A (en) * 2021-07-05 2024-03-07 샌트랄 글래스 컴퍼니 리미티드 Method for removing pentafluoride from monofluoride of molybdenum and method for manufacturing semiconductor devices

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08507196A (en) * 1994-01-31 1996-07-30 アプライド マテリアルズ インコーポレイテッド Electrostatic chuck with conformal insulator film
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
JPH1161448A (en) * 1997-08-18 1999-03-05 Sony Corp Dry etching
JP4529690B2 (en) * 2000-01-20 2010-08-25 住友電気工業株式会社 Wafer holder for semiconductor manufacturing apparatus, manufacturing method thereof, and semiconductor manufacturing apparatus
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
WO2004003968A2 (en) * 2002-06-28 2004-01-08 Tokyo Electron Limited Method and system for arc suppression in a plasma processing system
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
JP2008016795A (en) * 2006-07-06 2008-01-24 Momentive Performance Materials Inc Corrosion resistant wafer process device and manufacturing method therefor
CN101101887A (en) * 2006-07-06 2008-01-09 通用电气公司 Corrosion resistant wafer processing apparatus and method for making thereof
JP4994121B2 (en) 2006-08-10 2012-08-08 東京エレクトロン株式会社 Electrostatic chucking electrode, substrate processing apparatus, and method of manufacturing electrostatic chucking electrode
KR20100101641A (en) * 2007-12-20 2010-09-17 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Electrostatic chuck and method of forming
KR100997374B1 (en) * 2009-08-21 2010-11-30 주식회사 코미코 Electrode static chuck and method of manufacturing the same
WO2012056807A1 (en) * 2010-10-25 2012-05-03 日本碍子株式会社 Ceramic material, laminated body, member for semiconductor manufacturing device, and sputtering target member
US9666466B2 (en) * 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
WO2015132694A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
CN106340434B (en) * 2015-07-10 2018-12-14 东京毅力科创株式会社 Plasma processing apparatus and spray head
JP6670625B2 (en) * 2015-07-10 2020-03-25 東京エレクトロン株式会社 Plasma processing apparatus and shower head
JP6026620B2 (en) * 2015-10-22 2016-11-16 東京エレクトロン株式会社 Mounting table, plasma processing apparatus, and manufacturing method of mounting table
JP2017147278A (en) * 2016-02-15 2017-08-24 東京エレクトロン株式会社 Substrate mounting table and substrate processing apparatus

Also Published As

Publication number Publication date
CN109801827B (en) 2021-06-15
TWI789450B (en) 2023-01-11
CN109801827A (en) 2019-05-24
KR102165704B1 (en) 2020-10-14
JP2019096650A (en) 2019-06-20
KR20190056973A (en) 2019-05-27
JP6967944B2 (en) 2021-11-17

Similar Documents

Publication Publication Date Title
CN107622945B (en) Plasma etching method, plasma etching apparatus, and substrate mounting table
TW201719712A (en) Ale smoothness: in and outside semiconductor industry
JP2014086500A (en) Method of etching copper layer, and mask
JP6422262B2 (en) Plasma processing method and plasma processing apparatus
TWI606509B (en) Metal layer etching method
TW201933471A (en) Plasma treating apparatus which increases the tolerance of a loading table to plasma even when dry cleaning is performed
JP2014183184A (en) Method for etching film containing cobalt and palladium
TW201721713A (en) Method of processing object to be processed
KR102538188B1 (en) Plasma processing apparatus cleaning method
TWI743155B (en) Plasma etching method and plasma etching system
TW201727695A (en) Method of processing workpiece
WO2022138655A1 (en) Substrate processing method and substrate processing apparatus
CN115172163A (en) Plasma etching method
JP2006012940A (en) Plasma processing method and post-treating method
KR20220011582A (en) Plasma processing method and plasma processing apparatus
US20180350571A1 (en) Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor
CN111066121A (en) Selective in-situ cleaning of high dielectric constant films from processing chambers using reactive gas precursors