CN106340434B - Plasma processing apparatus and spray head - Google Patents
Plasma processing apparatus and spray head Download PDFInfo
- Publication number
- CN106340434B CN106340434B CN201610537014.6A CN201610537014A CN106340434B CN 106340434 B CN106340434 B CN 106340434B CN 201610537014 A CN201610537014 A CN 201610537014A CN 106340434 B CN106340434 B CN 106340434B
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- plasma
- substrate
- gas discharge
- film
- spray head
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
Abstract
The present invention provides a kind of good spray head of durability of plasma corrosion.The spray head (22) being arranged in plasma processing apparatus (11) includes: substrate (60) comprising for the recess portion to the gas discharge hole (40) of discharge processing gas in chamber (20) and the gas discharge outlet side for being formed in gas discharge hole (40)；It is constituted with by ceramics or stainless steel, the cylindric casing being fixed in the recess portion of substrate (60), using the structure for being covered the face configured with casing on the surface of casing and substrate (60) by anti-plasma film (63).Using porcelain bushing (61), basilar memebrane (62) are set between the face and anti-plasma film (63) of side plasma generating space (S) of substrate (60).
Description
Technical field
The present invention relates to the plasma processing apparatus for implementing corona treatment to the substrate being placed in mounting table, and
Space supply plasma generation gas is generated across plasma generating space and substrate relative configuration, plasma
Spray head.
Background technique
In the panel manufacturing step of flat-panel monitor (FPD), by using plasma processing apparatus to glass base
The substrates such as plate are implemented to have used the microfabrications such as the film process of plasma or etching process, ashing processing, thus in substrate
The upper device for forming pixel and electrode, wiring etc..In plasma processing apparatus, such as in the inside for the process chamber that can be depressurized
Mounting table is configured, by substrate-placing in mounting table, for generating to the space handled above indoor substrate, that is, plasma
Space supplies the spray head of processing gas, is configured to opposite with substrate across plasma generating space.In this way, passing through on one side
Space is generated from spray head plasma and supplies processing gas, is generated high-frequency electric field in plasma generating space on one side, is come
Plasma is generated in plasma generating space.
In the plasma due to spray head exposure, the corruption there has been proposed various inhibition plasmas to spray head
The technology of erosion.For example, proposing such a structure (referring to patent document 1), that is, using aluminium as the gas of the spray head of base material
Aluminium oxide workpiece, and the table of the plasma generating space side using plating aluminium oxide film covering spray head are inserted into tap
Face.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 8-227874 bulletin
Summary of the invention
Invention technical problem to be solved
But, the technology recorded as above patent document 1, using configuring oxygen in the gas discharge hole of spray head
In the case where the structure for changing aluminium workpiece, there are problems that the serviceable bife of spray head shortens.Specifically, even if being arranged in gas
Aluminium oxide workpiece is configured in portalling, it is interior in gas discharge hole there are the short time with the diversification etc. of the processing gas used
Plasma generating space side opening portion occur aluminium oxide workpiece and plating aluminium oxide film corrosion, lead to the mother of spray head
The problem of material exposes.
As the method for coping with the problem, it may be considered that increase the method for the radial thickness of aluminium oxide workpiece.But, if oxygen
The radial thickness for changing aluminium workpiece increases, then the plating aluminium oxide film that high adhesion force is formed on the end face of aluminium oxide workpiece will become tired
It is difficult.This is because the surface smoothness of aluminium oxide workpiece is high, and being easily detected by blasting treatment etc. keeps surface roughening, and
And it is also not high for the wetability of plating aluminium oxide film.Accordingly, there exist plating aluminium oxide films to remove in a short time, leads to spray head
The problem of base material exposes.
The purpose of the present invention is to provide a kind of good spray heads of durability of plasma corrosion.Also, this hair
Bright purpose, which also resides in, provides a kind of plasma processing apparatus including the good spray head of durability.
For solving the technical solution of technical problem
To achieve the goals above, the present invention provides the spray head being arranged in a kind of plasma processing apparatus, feature
Be: above-mentioned spray head includes: substrate comprising for the gas discharge hole of processing gas to be discharged and is formed in above-mentioned gas row
The recess portion for the gas discharge outlet side portalled；It is made of ceramics or stainless steel, the cylindric casing being fixed in above-mentioned recess portion；
With the anti-plasma film for covering the face configured with above-mentioned casing on the surface of above-mentioned casing and above-mentioned substrate.
To achieve the goals above, the present invention provides a kind of corona treatment and sets characterized by comprising has and supplies
Load the mounting table in the substrate-placing face of substrate；Above-mentioned mounting table is accommodated in internal chamber；Be placed in above-mentioned mounting
It is that the opposite mode of substrate on platform configures, to the spray head for supplying processing gas in above-mentioned chamber；With in above-mentioned chamber
Portion generates the plasma generating mechanism of the plasma of above-mentioned processing gas, and above-mentioned plasma processing apparatus utilizes above-mentioned etc.
Gas ions handle the substrate implementation being placed in above-mentioned mounting table, and above-mentioned spray head includes: substrate comprising for above-mentioned
The gas discharge hole of above-mentioned processing gas is discharged in chamber and is formed in the recessed of the gas discharge outlet side of above-mentioned gas tap
Portion；It is made of ceramics or stainless steel, the cylindric casing being fixed in above-mentioned recess portion；With by the surface of above-mentioned casing and above-mentioned
The anti-plasma film of the face covering configured with above-mentioned casing of substrate.
Invention effect
According to the present invention, in the state that spray head is set in plasma processing apparatus, in being set to spray head
Gas discharge hole plasma generating space side be configured with certain altitude and wall thickness by ceramics or stainless steel structure
At casing, and be formed on the face of the plasma generating space side of spray head the substrate tool to casing and spray head
There is the anti-plasma film of high adhesion force.Thereby, it is possible to realize that plasma processing has the spray head of high-durability.
Detailed description of the invention
Fig. 1 be indicate include the base plate processing system of the plasma processing apparatus of embodiment of the present invention outline structure
Perspective view.
Fig. 2 is the sectional view for indicating the outline structure of plasma processing apparatus included by base plate processing system.
Fig. 3 is the first structure example for indicating the gas discharge hole being arranged in spray head included by plasma processing apparatus
Sectional view and close-up sectional view.
Fig. 4 is indicated based on the combination of porcelain bushing and basilar memebrane come to the attached of anti-plasma film included by spray head
Put forth effort the figure of result evaluated.
Fig. 5 is the sectional view for indicating to form the partial structurtes of the spray head of anti-plasma yittrium oxide film.
Fig. 6 is the second structural example of the gas discharge hole for indicating to be arranged in spray head included by plasma processing apparatus
With the sectional view of third structural example.
Fig. 7 is the 4th structural example of the gas discharge hole for indicating to be arranged in spray head included by plasma processing apparatus
With the sectional view of the 5th structural example.
Fig. 8 is the 6th structural example of the gas discharge hole for indicating to be arranged in spray head included by plasma processing apparatus
Sectional view.
Fig. 9 is the plasma-resistance indicated to anti-plasma film included by spray head when changing constituent material
The figure for the result evaluated.
Figure 10 is to indicate combining come to the spray being made of mixing material based on porcelain bushing, SUS casing and basilar memebrane
The figure for the result that the adhesive force of anti-plasma film included by head is evaluated.
Description of symbols
11 plasma processing apparatus
20 chambers
21 mounting tables
23 pedestals
28 DC power supplies
40 gas discharge holes
50 inductive coupling antennas
60 substrates
61,61A, 61B porcelain bushing
62 basilar memebranes
63 anti-plasma films
63A anti-plasma yittrium oxide film
71,71A, 71B SUS casing.
Specific embodiment
Embodiment of the present invention is described in detail referring to the drawings.
Fig. 1 be indicate include the base plate processing system 10 of the plasma processing apparatus 11 of present embodiment outline structure
Perspective view.
Base plate processing system 10 include 3 to the FPD such as glass substrate with substrate G implement corona treatment, for example etc. from
The plasma processing apparatus 11 of daughter etching.3 plasma processing apparatus 11 are respectively more through gate valve 13 and horizontal cross-section
The side connection of the carrying room 12 of side shape (such as horizontal cross-section is rectangle).Wherein, the knot about plasma processing apparatus 11
Structure will describe later referring to Fig. 2.
Carrying room 12 is also connect through gate valve 15 with interlocking room (load-lock) 14 is loaded.Load lock 14 is across gate valve
17 have been disposed adjacent substrate carrying-in/carrying-out mechanism 16.2 indexs 18 have been disposed adjacent in substrate carrying-in/carrying-out mechanism 16.Index
The cassette 19 of storage substrate G is placed in device 18.Multiple (such as 25) substrate G can be stored in cassette 19.
The not shown control device control of the whole movement of base plate processing system 10.It is right in base plate processing system 10
When substrate G implements plasma etching, firstly, the substrate G being accommodated in cassette 19 is removed using substrate carrying-in/carrying-out mechanism 16
Enter the inside of load lock 14.At this point, if the inside of load lock 14 has the substrate G for having been carried out plasma etching,
The substrate G for having been carried out plasma etching is moved out out of load lock 14 then, is replaced with substrate not etched G.Work as base
After plate G moves in the inside of load lock 14, closing gate valve 17.
Then, it by the inner pressure relief of load lock 14 to defined vacuum degree, then opens carrying room 12 and loads mutual
Lock the gate valve 15 between room 14.It then, will be inside load lock 14 using the carrying mechanism (not shown) inside carrying room 12
Substrate G move in the inside of carrying room 12, closing gate valve 15 later.
Then, the gate valve 13 between carrying room 12 and plasma processing apparatus 11 is opened, will not lost using carrying mechanism
The substrate G at quarter moves in the inside of plasma processing apparatus 11.At this point, being had been carried out if existing inside plasma processing apparatus 11
The substrate G of plasma etching then moves out the substrate G for having been carried out plasma etching, replaces with substrate not etched G.
Later, plasma etching is implemented to the substrate G moved in using plasma processing apparatus 11.
Fig. 2 is the sectional view for indicating the outline structure of plasma processing apparatus 11.As plasma processing apparatus 11,
Device for processing inductive coupling plasmas is indicated herein.Plasma processing apparatus 11 includes: substantially rectangular chamber 20 (place
Manage room)；The mounting table 21 that the mesa-shaped of substrate G is loaded on the lower section in chamber 20, the substrate-placing face at the top of it is configured, with
Match across the window component (not shown) being made of dielectric or metal top of the mode opposite with mounting table 21 in chamber 20
The inductive coupling antenna 50 being made of helical conductor set；With in the lower section of window component to supplying processing gas in chamber 20
Gas supply part, that is, spray head 22.In the inside of chamber 20, formed between mounting table 21 and spray head 22 for generating plasma
The plasma generating space S of body.
Mounting table 21 is built-in with the pedestal (susceptor) 23 being made of conductor, and the matched device 25 of pedestal 23 is used with bias
High frequency electric source 24 connects.In addition, being configured with the Electrostatic Absorption portion 26 formed by layered dielectric, electrostatic on the top of mounting table 21
Adsorption section 26, which has, is coated on Electrostatic Absorption therein in such a way that the dielectric layer by the dielectric layer on upper layer and lower layer clips
Electrode 27.
Electrode for electrostatic attraction 27 is connect with DC power supply 28, when being applied with directly from DC power supply 28 to electrode for electrostatic attraction 27
When galvanic electricity is pressed, the substrate G being placed in mounting table 21 is adsorbed using electrostatic force and is kept by Electrostatic Absorption portion 26.Bias high-frequency electrical
The RF power relatively low to 23 supply frequency of pedestal of source 24 generates substrate G of the Electrostatic Absorption in Electrostatic Absorption portion 26 straight
Flow bias.It is formed in addition, Electrostatic Absorption portion 26 can also be used as plate component, or can also be used as sputtered films of bismuth and be formed in load
It sets on platform 21.
Mounting table 21 is built-in with the refrigerant flow path 29 for cooling placed substrate G, refrigerant flow path 29 and supply
The heat-conducting gas supply mechanism 30 of heat-conducting gas connects.As heat-conducting gas for example using He gas.Heat-conducting gas supply mechanism
30 include heat-conducting gas supply source 31 and gas flow controller 32, and heat-conducting gas is supplied to mounting table 21.Mounting table 21 is wrapped
Include the multiple heat-conducting gas holes 33 opened up on top, and the biography for being connected to each heat-conducting gas hole 33 with heat-conducting gas supply mechanism 30
Hot gas feed path 34.The back side and mounting table 21 in mounting table 21, in the substrate G by 26 Electrostatic Absorption of Electrostatic Absorption portion
Top between produce small gap, but by using filling the gap from the heat-conducting gas that heat-conducting gas hole 33 supplies,
The heat transference efficiency that can be improved substrate G Yu mounting table 21 can be improved mounting table 21 to the cooling efficiency of substrate G.
Spray head 22 be configured to it is opposite with the entire surface for the substrate G being placed in mounting table 21, with processing gas supply machine
Structure 35 connects.Processing gas feed mechanism 35 includes processing gas supply source 36, gas flow controller 37 and pressure-control valve
38.Spray head 22 is built-in with the surge chamber 39 being connected to processing gas feed mechanism 35, and surge chamber 39 is discharged through a large amount of gas
Hole 40 is connected to plasma generating space S.
The processing gas for being supplied to surge chamber 39 from processing gas feed mechanism 35 is fed to from gas discharge hole 40
Gas ions generate space S.Multiple gas discharge holes 40 are in the mode opposite with the entire surface for the substrate G being placed in mounting table 21
It dispersedly configures, the plasma generating space S that thus, it is possible to equably be directed into processing gas on substrate G.In addition, about
The detailed construction of gas discharge hole 40 will be described in detail later.
The matched device 42 of inductive coupling antenna 50 is generated with plasma and is connect with high frequency electric source 41, and plasma, which generates, to be used
The RF power of the plasma generation relatively high to 50 supply frequency of inductive coupling antenna of high frequency electric source 41.It is supplied with
The inductive coupling antenna 50 of the RF power of gas ions generation generates electric field in plasma generating space S.In addition, wait from
Daughter processing unit 11 includes the exhaust pipe 43 being connected to inside chamber 20, can be discharged inside chamber 20 by exhaust pipe 43
Gas makes to become defined decompression state inside chamber 20.
The movement of each component of plasma processing apparatus 11, by Setup Controller 44 in base plate processing system 10
Regulated procedure is executed under being uniformly controlled of control device and is controlled.Real to substrate G using plasma processing apparatus 11
When applying plasma etching, plasma generating space S is depressurized, processing gas is directed into plasma generating space S, and
And the RF power of plasma generation is supplied to inductive coupling antenna 50.Electricity is generated in plasma generating space S as a result,
?.It is directed into the processing gas of plasma generating space S and plasma is generated by electric field excitation, due to existing through mounting table 21
The effect of the Dc bias current potential generated on substrate G, the cation in plasma, which is lured, leads to substrate G, substrate G is implemented etc.
Plasma.Also, the free radical in plasma reaches substrate G, implements plasma etching to substrate G.
In plasma processing apparatus 11, inductive coupling antenna 50 is configured in a manner of covering the entire surface of substrate G, by
This can generate plasma in a manner of covering the entire surface of substrate G, thus can the entire surface to substrate G equably implement
Plasma etching.
Then, the structure of the gas discharge hole 40 in spray head 22 is illustrated.
(a) of Fig. 3 is the sectional view for indicating the first structure example for the gas discharge hole 40 being arranged in spray head 22, Fig. 3's
(b) be region A shown in Fig. 3 (a) amplification sectional view.
The substrate 60 of spray head 22 is for example made of aluminium.In the side plasma generating space S of gas discharge hole 40, i.e.,
In the gas discharge outlet side of gas discharge hole 40, it is formed with the recess portion for configuring the porcelain bushing 61 with cylindrical shape.
On the wall surface for forming the recess portion and gas discharge hole 40, it is formed with acidproof aluminium film 65.
Porcelain bushing 61 is embedded in the recess portion for being set to substrate 60, so that the centre bore of porcelain bushing 61 constitutes gas
A part of tap 40.Porcelain bushing 61 is bonded using silica-based bonding agent 64 Deng, is fixed in recess portion.As ceramics
Casing 61 is for example using aluminium oxide (Al2O3) casing.
Porcelain bushing 61 is for example 1~2mm of φ with internal diameter, and outer diameter is 4~8mm of φ, and height (thickness) is 3mm~5mm
Shape.The radial thickness (=(outer diameter-internal diameter)/2) of porcelain bushing 61 is preferably 1mm or more, so as to obtain equity from
The desired durability of daughter.In addition, the height of porcelain bushing 61 according to plasma invade it is deep to gas discharge hole more than 40 and
Setting preferably increases height in the biggish situation of internal diameter.
62 (primary coat of basilar memebrane is formed on the surface of the side plasma generating space S of substrate 60 and porcelain bushing 61
Film).Basilar memebrane 62 is for example made of yttrium oxide (hereinafter referred to as " yttria-base counterdie ") or aluminium (hereinafter referred to as " aluminium base counterdie "), thick
Degree is 10 μm~50 μm, preferably 20 μm~30 μm.
Anti-plasma film 63 is formed on basilar memebrane 62.Anti-plasma film 63 is such as aluminium oxide (hereinafter referred to as " resistance to
Gas ions pellumina "), yttrium oxide (hereinafter referred to as " anti-plasma yittrium oxide film ") constitute.The thickness of anti-plasma film 63
It is 50 μm~400 μm, preferably 100 μm~200 μm.
The spray head 22 of gas discharge hole 40 with structure shown in Fig. 3 can for example be manufactured by following steps.Firstly,
For being formed with the substrate 60 of gas discharge hole 40 and recess portion, using the methods of common anodized substrate 60 table
Face forms acidproof aluminium film 65.Wherein, gas discharge hole 40 and recess portion can be added by using the machinery of drill bit or slotting cutter etc.
Work (machining) and be readily formed.
Then, porcelain bushing 61 is bonded in recess portion using silica-based bonding agent 64 is equal.At this point, porcelain bushing 61
It is positioned through according to dimensional accuracy in the recess portion that substrate 60 be machined etc. and is formed, therefore porcelain bushing 61 is viscous
It connects and does not need special jig, can easily be done bonding process.
Then, (become when being assembled into plasma processing apparatus 11 in the face configured with porcelain bushing 61 of substrate 60
The face of the side plasma generating space S, the surface (hereinafter referred to as " film forming face of substrate 60 ") including porcelain bushing 61) implement spray
Sand processing etc..Make the film forming face of substrate 60 coarse as a result, to improve its surface roughness.This is to be mentioned using anchoring effect
The adhesive force of high basilar memebrane 62 and carry out.
In addition, in the present embodiment, not forming acidproof aluminium film in the film forming face of substrate 60 as shown in (b) of Fig. 3
65.This is because the acidproof aluminium film 65 being formed in the film forming face of substrate 60 is removed because of blasting treatment.It is however also possible to
Blasting treatment is carried out in the way of in the film forming face for making acidproof aluminium film 65 remain in substrate 60.
For constituting the aluminium of substrate 60 and being formed in acidproof aluminium film and the porcelain bushing 61 on its surface, due to material
Difference, the process velocity of blasting treatment exist different.Therefore, even if the part of substrate 60 has reached defined surface roughness,
The surface of porcelain bushing 61 is generally also not up to the surface roughness being identical with this.In this case, if after blasting treatment
Anti-plasma film 63 is directly formed in the film forming face of substrate 60, even if then anti-plasma film 63 is in the part of substrate 60 because of anchor
Gu effect obtains high adhesion force, anchoring effect can not be also obtained in the part of porcelain bushing 61, adhesive force is lower.Therefore, exist
The all high basilar memebrane 62 of wetability for 63 both sides of porcelain bushing 61 and anti-plasma film is formed in the film forming face of substrate 60.
Thereby, it is possible to the anti-plasma film 63 of contiguity is formed on the surface of porcelain bushing 61.
Basilar memebrane 62 can for example be formed by APS (Atmospheric Plasma Spraying) spray coating method.Herein,
In the case where forming yttria-base counterdie as basilar memebrane 62, even if directly forming anti-plasma film on its surface later
63, also it is capable of forming the anti-plasma film 63 for showing high adhesion force.On the other hand, aluminium substrate is being formed as basilar memebrane 62
In the case where film, although also can directly form anti-plasma film 63 on its surface, preferably so that its surface becomes coarse
Degree implement blasting treatment, so as to using anchoring effect realize anti-plasma film 63 adhesive force raising.In addition,
Even if the blasting treatment for making its surface become coarse degree can also be carried out in the case where forming yttria-base counterdie.
Anti-plasma film 63 is formed on the basilar memebrane 62 formed in this way, such as through APS spray coating method etc..It is complete as a result,
At the manufacture of the spray head 22 of the gas discharge hole 40 with first structure example shown in Fig. 3.
Fig. 4 is to indicate to carry out based on the combination of porcelain bushing 61 and basilar memebrane 62 come the adhesive force to anti-plasma film 63
The figure of the result of evaluation.Wherein, porcelain bushing 61 is alumina sleeve.Basilar memebrane 62 is yttria-base counterdie and aluminium base counterdie,
But, in the case where aluminium base counterdie, blasting treatment has been carried out before forming anti-plasma film 63.
In addition, " SUS " in anti-plasma film shown in Fig. 4 be as anti-plasma film 63 SUS film it is (following
Claim " anti-plasma SUS film "), the film build method of anti-plasma SUS film is able to use APS spray coating method.In addition, about Fig. 4
Shown in " SUS casing " and its result be described further below.
In the evaluation of the adhesive force of anti-plasma film 63, controlled on anti-plasma film 63 using bonding agent installation
Tool determines the easy degree of the removing of anti-plasma film 63 when certain power being used to pull jig, the "○" in figure
Expression obtains high adhesion force.
It is attached in the case where directly forming anti-plasma pellumina on porcelain bushing 61 as anti-plasma film 63
Put forth effort lower, there are problems for durability.It but, can in the case where forming anti-plasma pellumina on basilar memebrane 62
Confirmation anti-plasma pellumina shows high adhesion force.
In addition, in the case where forming anti-plasma yittrium oxide film as anti-plasma film 63, even if not forming base
Counterdie 62 can also obtain high adhesion force.It is believed that this is because yttrium oxide is higher to the wetability of aluminium oxide.In this case, gas
The structure of body tap 40 as shown in cross- section in figure 5, becomes and does not form basilar memebrane 62 in the film forming face of substrate 60 but straight
Connect the structure to form anti-plasma yittrium oxide film 63A as anti-plasma film 63.In addition, as anti-plasma film 63
The anti-plasma SUS film of an example is not attached to porcelain bushing 61.
It as described above, can be in gas according to the first structure example for the gas discharge hole 40 being set in spray head 22
The side the plasma generating space S configuration of tap 40 has the porcelain bushing 61 of certain thickness and wall thickness, is formed to ceramics
Casing 61 has the anti-plasma film 63 of high adhesion force.Thereby, it is possible to realize that plasma processing has high-durability
Spray head 22.
(a) of Fig. 6 is the sectional view for indicating the second structural example of the gas discharge hole 40 being arranged in spray head 22.
As already explained, directly forming the high anti-plasma film 63 of adhesive force on the surface of porcelain bushing 61 is not
Readily.Therefore, in order to the surface of porcelain bushing 61 formed high adhesion force anti-plasma film 63, be preferably provided with basilar memebrane
62.But then, for the aluminium of substrate 60, by using making surface become coarse such as blasting treatment, being then not necessarily to
Setting basilar memebrane 62 also can directly form anti-plasma film 63.
Therefore, in the second structural example of gas discharge hole 40, prepare pre- on an end face in height (thickness) direction
It is initially formed the porcelain bushing 61 of basilar memebrane 62, the recess portion for being set to substrate 60 is adhered in the same manner as first structure example
In.Later, anti-plasma film 63 is formed on the face for being configured with porcelain bushing 61 of substrate 60.Thereby, it is possible to be formed to base
Material 60 and 61 both sides of porcelain bushing have the anti-plasma film 63 of high adhesion force.According to the second structure of gas discharge hole 40
Example is able to suppress cost required for forming basilar memebrane 62 due to not needing to form basilar memebrane 62 on substrate 60.
(b) of Fig. 6 is the sectional view for indicating the third structural example for the gas discharge hole 40 being arranged in spray head 22.Third knot
Structure example forms through hole the difference lies in that having with first structure example (Fig. 3's) in substrate 60, and porcelain bushing 61A is inserted
Enter and be fixed on the structure in the through hole using silica-based bonding agent etc., other structures are identical as first structure example.
In third structural example, the centre bore of porcelain bushing 61A becomes gas discharge hole 40.Porcelain bushing 61A has this
The shape of sample, that is, outer diameter is certain, and using the wall ratio of the gas discharge outlet side of gas discharge hole 40 as gas inflow entrance one
The mode of the wall thickness thickness of 39 side of surge chamber of side, is locally provided with difference in internal diameters.This is allowed for, gas discharge outlet side by
In exposure in the plasma so need to improve the durability of plasma, and 39 side of surge chamber due to be exposed to etc. from
Probability in daughter it is lower so wall thickness is relatively thin even.In the same manner as porcelain bushing 61, the gas discharge outlet of porcelain bushing 61A
The preferred 1mm or less of the wall thickness of side.
By using porcelain bushing 61A, other than the effect that can be obtained when using porcelain bushing 61, additionally it is possible to improve
The corrosion resistance of the inner wall plasma of gas discharge hole 40, and also can be improved to the corrosion-resistant of used gas
Property.In addition, not needing to be formed acidproof on the wall surface for the through hole being arranged in substrate 60 to be inserted into porcelain bushing 61A
Aluminium film.
In addition, can also alumina sleeve be replaced to use the yttrium oxide casing being made of yttrium oxide as porcelain bushing 61.
In this case, it is preferable to use the yttria-base counterdies that identical material is constituted if forming basilar memebrane 62.In addition, as it is resistance to it is equal from
Daughter film 63 can not also form basilar memebrane 62 using in the case where anti-plasma yittrium oxide film.
(a) of Fig. 7 is the sectional view for indicating the 4th structural example of the gas discharge hole 40 being arranged in spray head 22.With first
Structural example (Fig. 3) is compared, and the 4th structural example is with first structure example the difference lies in that instead of 61 use of porcelain bushing by stainless steel
The SUS casing 71 of composition, and be not provided with basilar memebrane 62 but directly form anti-plasma film in the film forming face of substrate 60
63.Their difference is illustrated below.
The shape of SUS casing 71 can be identical as the shape of porcelain bushing 61.SUS casing 71, which is embedded in, is set to substrate
In 60 recess portion, it is bonded using silica-based bonding agent etc..For SUS casing 71, make it by, for example, blasting treatment
Surface becomes defined surface roughness, can be improved using spray coating method formed in the case where anti-plasma film 63 with it is resistance to etc.
Adhesive force between gas ions film 63.Therefore, basilar memebrane 62 is not needed using SUS casing 71.In addition, stainless steel
Linear expansion coefficient is close with the linear expansion coefficient of aluminium.Therefore, even if increasing the outer diameter of SUS casing 71, in its connecing with substrate 60
It closes boundary to be also not easy to crack, for the thermal cycle generated because carrying out corona treatment to spray head 22, performance
Good durability out.
Anti-plasma film 63 is other than using anti-plasma pellumina, anti-plasma yittrium oxide film, moreover it is possible to
Enough use anti-plasma SUS film.In the same manner as anti-plasma pellumina and anti-plasma yittrium oxide film, resistant to plasma
Body SUS film can be formed using APS spray coating method, with a thickness of 50 μm~400 μm, preferably 100 μm~200 μm.
About the manufacturing step for the spray head 22 for being configured with SUS casing 71 in gas discharge hole 40, in addition to not forming substrate
Identical as the manufacturing step of spray head 22 illustrated for first structure example (Fig. 3) except 62 this point of film, description will be omitted.Make
Effect same as the spray head 22 of porcelain bushing 61 has been used can be played with the spray head 22 of SUS casing 71.In addition, making
Basilar memebrane 62 can not be formed with the spray head 22 of SUS casing 71, therefore has the advantages that manufacturing step can be shortened.
As shown in figure 4, for SUS casing 71, anti-plasma pellumina, anti-plasma yittrium oxide film and it is resistance to etc. from
Daughter SUS film all shows high adhesion force, therefore by using SUS casing 71, the selection of anti-plasma film 63 is free
Degree increases.
(b) of Fig. 7 is the sectional view for indicating the 5th structural example of the gas discharge hole 40 being arranged in spray head 22.5th knot
Structure example and the 4th structural example ((a) of Fig. 7) form through hole the difference lies in that having in substrate 60, and by SUS casing
71A insertion is simultaneously bonded in the structure in the through hole, other structures and the 4th structural example using silica-based bonding agent etc.
It is identical.
In the 5th structural example, in the same manner as above-mentioned third structural example ((b) of Fig. 6), the centre bore of SUS casing 71A
As gas discharge hole 40.By using SUS casing 71A, the resistance to of the inner wall plasma of gas discharge hole 40 can be improved
Corrosivity, and also can be improved the corrosion resistance to used gas.
(a), (b) of Fig. 8 is the sectional view for indicating the 6th structural example of the gas discharge hole 40 being arranged in spray head 22.?
Above-mentioned first structure example is into the 5th structural example, and by sleeve belt, come length direction, (processing gas flows in gas discharge hole 40
Direction) setting difference of height.For example, utilizing the difference of height band using the processing gas being made of multiple gases
The throttle effect come, can be improved the uniformity of processing gas.But, the difference of height in gas discharge hole 40 need not necessarily
It is orthogonal with the length direction of gas discharge hole 40.
(a) expression of Fig. 8, which has been used, is provided with the structural example of the porcelain bushing 61B of inclined surface (conical surface) in centre bore, removes
It is as the structure of first structure example (Fig. 3) identical using the structure except porcelain bushing 61B this point.And (b) expression of Fig. 8 makes
With being provided with the structural example of the SUS casing 71B of the conical surface in centre bore, the structure other than using SUS casing 71B this point
It is identical as the 5th structural example ((b) of Fig. 7).
In addition, can also similarly make the difference of height inclination that the inner circumferential of porcelain bushing 61A is arranged in, can also be covered in SUS
The conical surface is arranged in the centre bore of pipe 71.In addition, gas discharge hole 40 need not necessarily have difference of height inside it, but,
In the case where being not provided with difference of height, the radial thickness by the casing of the side plasma generating space S is needed to be set as to obtain
Obtain the desired durability of plasma.
The present invention will be described for above embodiment used above, but the present invention is not limited to above embodiment.
For example, in the above-described embodiment, anti-plasma film 63 is separately formed by yttrium oxide or aluminium oxide, but can also be by mixing material
Material is constituted.But, in the case where being separately formed anti-plasma film 63 by yttrium oxide, the anti-plasma film 63 is to plasma
The patience (hereinafter referred to as " plasma-resistance ") of body is improved, but yttrium oxide to acid patience (hereinafter referred to as " acid resistance ") compared with
It is low.Thus, when plasma processing apparatus 11 is safeguarded, chamber 20 moisture in atmosphere and remains in chamber to atmosphere opening
The chloride of deposit, gas in 20 reacts and generates the acid such as hydrochloric acid (HCl), and anti-plasma film 63 may be because of the acid
And it is damaged.Thus, it may be considered that there is acid proof aluminium oxide to improve anti-plasma film 63 for mixing in yttrium oxide
Acid resistance, but in this case, produced since aluminium oxide and yttrium oxide keep graininess to be present in anti-plasma film 63
Crystal boundary, so plasma-resistance reduces.But, if containing the silicon (Si) melted, the group of mixing material in mixing material
The nature of glass can be gone bad by knitting, and become densification to not allow to be also easy to produce crystal boundary.Therefore, sharp for acid proof purpose is improved
In the case where constituting anti-plasma film 63 with the mixing material containing aluminium oxide, it is added preferably in mixing material for inhibiting
The silicon compound that crystal boundary generates, such as silicon oxide or silicon nitride.
Fig. 9 is the knot for indicating the plasma-resistance to the anti-plasma film 63 when changing constituent material and being evaluated
The figure of fruit.Anti-plasma film 63 is formed using APS spray coating method etc. in the case where any constituent material, as composition material
Material is used alone aluminium oxide (hereinafter referred to as " oxidation sprayed aluminum "), is used alone yttrium oxide (hereinafter referred to as " yttrium oxide spraying "), uses
Aluminium oxide, yttrium oxide and silica (SiO2) mixing material (hereinafter referred to as " mixing spraying A "), and use aluminium oxide, oxidation
Yttrium, silica (SiO2) and silicon nitride (Si3N4) mixing material (hereinafter referred to as " mixing spraying B ").In addition, as plasma
Using from bromine chloride (BCl3) and chlorine (Cl2) the plasma that generates of mixed gas, evaluation is by each anti-plasma film 63 at this
The waste of exposure after a certain period of time in plasma.In addition, with the waste of the anti-plasma film 63 of yttrium oxide spraying for 1
The waste of each anti-plasma film 63 is standardized.
As shown in figure 9, the waste of the anti-plasma film 63 of oxidation sprayed aluminum is 9, mixing spraying A and mixing spraying B
Anti-plasma film 63 waste be 1.I.e., it is known that mixing spraying A and mixing spraying B have with yttrium oxide spraying on an equal basis
Plasma-resistance.In addition, the tissue of the anti-plasma film 63 of mixing spraying A and mixing spraying B is confirmed using SEM, it can be true
Recognize and do not generate crystal boundary, tissue goes bad into the nature of glass and becomes to densify.It follows that in the resistance to of mixing spraying A and mixing spraying B
In plasma membrane 63, the anti-plasma because of caused by the material other than mixed oxidization yttrium is compensated for by the densification of tissue
The reduction of property.
Figure 10 is to indicate combining come to the resistance to of mixing spraying A, B based on porcelain bushing 61, SUS casing 71 and basilar memebrane 62
The figure for the result that the adhesive force of plasma membrane 63 is evaluated.Wherein, porcelain bushing 61 herein is alumina sleeve or oxygen
Change yttrium casing, basilar memebrane 62 is yttria-base counterdie.
In the evaluation of the adhesive force of the anti-plasma film 63 of Figure 10, in the same manner as the evaluation of Fig. 4, in anti-plasma
Bonding agent assembling fixture is used on film 63, the easy journey removed to the anti-plasma film 63 when certain power being used to pull jig
Degree is determined that the "○" expression in figure obtains high adhesion force.
In the case where directly forming the anti-plasma film 63 of mixing spraying A, B on porcelain bushing 61, adhesive force is lower,
There are problems for durability.It but, can in the case where forming the anti-plasma film 63 of mixing spraying A, B on basilar memebrane 62
Confirmation anti-plasma film 63 shows high adhesion force.On the other hand, directly or across 62 shape of basilar memebrane on SUS casing 71
In the case where anti-plasma film 63 at mixing spraying A, B, it is able to confirm that anti-plasma film 63 shows high adhesion force.
From the above description, it can be seen that can not only be utilized if constituting anti-plasma film 63 by mixing spraying A, B
Contained aluminium oxide ensures acid resistance, additionally it is possible to using the densification because of contained silicon compound bring tissue resistance to ensure
Plasma.In addition, in the case where forming the anti-plasma film 63 of mixing spraying A, B on porcelain bushing 61, from resistance to etc.
From the perspective of the adhesive force of gas ions film 63, it is preferably formed as basilar memebrane 62.On the other hand, mixing is formed on SUS casing 71
In the case where the anti-plasma film 63 for spraying A, B, then basilar memebrane 62 can be formed or not formed.
Above-mentioned mixing spraying A contains silica, and mixing spraying B contains silica and silicon nitride, but, since silicon is to group
The contribution for the densification (going bad into the nature of glass) knitted is larger, so as long as anti-plasma film 63 is containing arbitrary silicon compound
Can make dense structure, such as even if anti-plasma film 63 not silicon oxide-containing but by aluminium oxide, yttrium oxide and silicon nitride
Mixing material constitute, can also make dense structure.
In addition, in the case where anti-plasma film 63 is made of mixing spraying A, B, in order to reliably carry out the cause of tissue
Densification does not preferably use the side of direct spraying after mixing aluminium oxide, yttrium oxide, silica and/or the respective powder of silicon nitride
Method, but spray granulation is utilized to mix aluminium oxide, yttrium oxide, silica and/or silicon nitride, use the granulation being mixed to get
Powder is sprayed.
In addition, in the above-described embodiment, as plasma processing apparatus 11 with inductive type corona treatment
It is illustrated for device, but not limited to this, plasma processing apparatus 11 is also possible to by supplying height to spray head 22
Frequency electric power to generate the capacitive coupling plasma processing apparatus of plasma in plasma generating space S.
In addition, being said for carrying out apparatus for plasma etching to substrate as plasma processing apparatus 11
It is bright, but not limited to this, it is also possible to other plasma processing apparatus such as film formation device, cineration device, ion implantation apparatus.
In addition, be illustrated for glass substrate as substrate G by FPD, even if being other substrates (such as semiconductor die
Circle) it also can be using the present invention.
Claims (12)
1. a kind of spray head being arranged in plasma processing apparatus, it is characterised in that:
The spray head includes:
Substrate is made of aluminium, including gas discharge hole, and the gas discharge hole, which has, is located at the plasma processing apparatus
Plasma generating space side gas discharge outlet, processing gas is discharged from the gas discharge outlet, the substrate further includes
It is formed in the recess portion of the gas discharge outlet side of the gas discharge hole；
It is made of stainless steel, the cylindric casing being fixed in the recess portion；With
By the anti-plasma film of the face covering configured with described sleeve pipe of the surface of described sleeve pipe and the substrate.
2. spray head as described in claim 1, it is characterised in that:
Acidproof aluminium film is formed on the wall surface for forming the gas discharge hole.
3. spray head as claimed in claim 1 or 2, it is characterised in that:
The anti-plasma film is pellumina, yittrium oxide film or stainless steel membrane.
4. spray head as claimed in claim 1 or 2, it is characterised in that:
The anti-plasma film is made of mixing sputtered films of bismuth, and the mixing sputtered films of bismuth also wraps other than aluminium oxide, yttrium oxide
At least one of silicon oxide-containing and silicon nitride.
5. spray head as claimed in claim 1 or 2, it is characterised in that:
The internal diameter of described sleeve pipe is φ 1mm~φ 2mm, and it is highly 3mm~5mm that outer diameter, which is 4mm~8mm,.
6. spray head as claimed in claim 5, it is characterised in that:
The radial thickness of described sleeve pipe is 1mm or more.
7. spray head as claimed in claim 1 or 2, it is characterised in that:
Diameter of the gas discharge hole in the substrate is greater than the internal diameter of described sleeve pipe and is less than the outer diameter of described sleeve pipe.
8. spray head as claimed in claim 1 or 2, it is characterised in that:
The outer diameter of described sleeve pipe is certain and internal diameter presence is poor, and described sleeve pipe is in the gas discharge outlet side of the gas discharge hole
The wall thickness of wall ratio gas inflow entrance side is thick.
9. a kind of plasma processing apparatus characterized by comprising
Mounting table with the substrate-placing face for loading substrate；
The mounting table is accommodated in internal chamber；
Spray being configured in the mode opposite with the substrate being placed in the mounting table, to processing gas is supplied in the chamber
Drench head；With
The plasma generating mechanism of the plasma of the processing gas is generated in the inside of the chamber,
The plasma processing apparatus is handled the substrate implementation being placed in the mounting table using the plasma,
The spray head includes:
Substrate is made of aluminium, including gas discharge hole, and the gas discharge hole, which has, is located at the plasma processing apparatus
Plasma generating space side gas discharge outlet, the processing gas is discharged into the chamber from the gas discharge outlet
Body, the substrate further include the recess portion for being formed in the gas discharge outlet side of the gas discharge hole；
It is made of stainless steel, the cylindric casing being fixed in the recess portion；With
By the anti-plasma film of the face covering configured with described sleeve pipe of the surface of described sleeve pipe and the substrate.
10. plasma processing apparatus as claimed in claim 9, it is characterised in that:
The anti-plasma film is pellumina, yittrium oxide film or stainless steel membrane.
11. plasma processing apparatus as claimed in claim 9, it is characterised in that:
The anti-plasma film is made of mixing sputtered films of bismuth, and the mixing sputtered films of bismuth also wraps other than aluminium oxide, yttrium oxide
At least one of silicon oxide-containing and silicon nitride.
12. the plasma processing apparatus as described in any one of claim 9~11, it is characterised in that:
The internal diameter of described sleeve pipe is φ 1mm~φ 2mm, and it is highly 3mm~5mm that outer diameter, which is 4mm~8mm,.
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| JP2015-138531 | 2015-07-10 | ||
| JP2015138531 | 2015-07-10 | ||
| JP2016-023548 | 2016-02-10 | ||
| JP2016023548A JP6670625B2 (en) | 2015-07-10 | 2016-02-10 | Plasma processing apparatus and shower head |
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| JP6984126B2 (en) * | 2016-12-27 | 2021-12-17 | 東京エレクトロン株式会社 | Manufacturing method of gas supply device, plasma processing device and gas supply device |
| JP6967944B2 (en) * | 2017-11-17 | 2021-11-17 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP7126431B2 (en) * | 2018-11-30 | 2022-08-26 | 東京エレクトロン株式会社 | shower head and gas treater |
| CN111243933A (en) * | 2020-02-18 | 2020-06-05 | 信利(仁寿)高端显示科技有限公司 | Upper electrode of dry etching equipment and dry etching equipment |
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| CN102779715A (en) * | 2011-05-10 | 2012-11-14 | 东京毅力科创株式会社 | Plasma generating electrode and plasma processing device |
| CN103866291A (en) * | 2012-12-18 | 2014-06-18 | 中微半导体设备(上海)有限公司 | Corrosion-resistant pneumatic spray head and manufacture method thereof |
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| JPH08227874A (en) * | 1995-02-21 | 1996-09-03 | Mitsubishi Electric Corp | Vacuum processing device and method |
| JP4364667B2 (en) * | 2004-02-13 | 2009-11-18 | 東京エレクトロン株式会社 | Thermal spray member, electrode, and plasma processing apparatus |
| KR101046902B1 (en) * | 2005-11-08 | 2011-07-06 | 도쿄엘렉트론가부시키가이샤 | Plasma treatment device using shower plate and shower plate |
| JP2012036487A (en) * | 2010-08-11 | 2012-02-23 | Toshiba Corp | Yttria-containing film and forming method thereof, and semiconductor manufacturing apparatus and plasma treatment apparatus |
| JP6097499B2 (en) * | 2012-07-20 | 2017-03-15 | 東京エレクトロン株式会社 | Parts for plasma processing apparatus and plasma processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102779715A (en) * | 2011-05-10 | 2012-11-14 | 东京毅力科创株式会社 | Plasma generating electrode and plasma processing device |
| CN103866291A (en) * | 2012-12-18 | 2014-06-18 | 中微半导体设备(上海)有限公司 | Corrosion-resistant pneumatic spray head and manufacture method thereof |
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