TW201933459A - Wafer processing method for inhibiting defect generation and capable of dicing wafer within short period of time - Google Patents

Abstract

The present invention provides a wafer processing method, which may inhibit the generation of defects and may dice the wafer within a short period of time. The wafer processing method of the present invention is to dice a wafer along a plurality of preset lines to be cut set on the wafer, and includes a loading step and a dicing step, wherein the loading step is to load a wafer on a heating platform with an adhesive tape placed therebetween, wherein the wafer is attached with adhesive tape on one side and formed with a modifying layer as the starting point for dicing on the position inside the wafer corresponding to the preset lines to be cut; and, the dicing step is to dice the wafer along the preset lines to be cut with the modifying layer being used as the starting point after the wafer is loaded on the heating platform and heated by the heating platform, and using a cooling unit to cool the entire exposed surface of the wafer. During the dicing step, the thermal shock generated by temperature difference between heating and cooling is used to break the wafer.

Description

晶圓的加工方法Wafer processing method

發明領域 本發明是有關於一種可在沿著分割預定線分割晶圓時適用之晶圓的加工方法。FIELD OF THE INVENTION The present invention relates to a method of processing a wafer that can be applied when a wafer is divided along a predetermined line of division.

發明背景 在以行動電話及個人電腦為代表的電子機器中，具備有電子電路等的器件之器件晶片已成為必要的構成要素。器件晶片可以藉由例如下述作法來製造：將以矽或砷化鎵等之半導體材料所形成之晶圓的正面以複數條分割預定線(切割道(street))來區劃，且在各個區域中形成器件後，沿著此分割預定線來分割晶圓。Background of the Invention In an electronic device typified by a mobile phone and a personal computer, a device chip having a device such as an electronic circuit has become an essential component. The device wafer can be manufactured by, for example, a method of dividing a front surface of a wafer formed of a semiconductor material such as germanium or gallium arsenide by a plurality of predetermined lines (streets), and in various regions. After the device is formed, the wafer is divided along the dividing line.

分割晶圓的方法的其中一種，已知有讓穿透性之雷射光線聚光於晶圓的內部，且藉由多光子吸收而形成改質層(改質區域)之方法(SD：隱形切割，Stealth Dicing)(參照例如專利文獻1)。在沿著分割預定線來形成改質層後，是藉由利用例如刀狀的構件等來施加力學上的壓力，以使晶圓以改質層為起點而分割成複數個器件晶片(參照例如專利文獻2)。 先前技術文獻 專利文獻One of the methods of dividing a wafer is known as a method of concentrating penetrating laser light inside a wafer and forming a modified layer (modified region) by multiphoton absorption (SD: invisible) Cutting, Stealth Dicing) (refer to, for example, Patent Document 1). After the reforming layer is formed along the dividing line, the mechanical pressure is applied by using, for example, a blade-shaped member or the like, so that the wafer is divided into a plurality of device wafers starting from the modified layer (refer to, for example, Patent Document 2). Prior Technical Literature Patent Literature

專利文獻1：日本專利特開2002-192370號公報 專利文獻2：日本專利特開2016-40810號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2002-192370. Patent Document 2: Japanese Patent Laid-Open No. 2016-40810

發明概要 發明欲解決之課題 但是，由於如上述的晶圓一般是較脆的，因此在施加力學上的壓力之方法中，會容易使器件晶片之邊緣等缺損。又，由於必須對所有的分割預定線施加壓力，因此當器件晶片的尺寸變小時(例如，縱寬1mm×橫寬1mm等)，會導致於分割上所需要之時間也變長。SUMMARY OF THE INVENTION Problem to be Solved by the Invention However, since the wafer as described above is generally brittle, in the method of applying mechanical stress, the edge of the device wafer or the like is easily broken. Further, since it is necessary to apply pressure to all of the planned dividing lines, when the size of the device wafer becomes small (for example, 1 mm in length × 1 mm in width, etc.), the time required for the division becomes long.

本發明是有鑒於所述問題點而作成的發明，其目的在於提供一種抑制缺損之產生並且可以在短時間內分割晶圓之晶圓的加工方法。 用以解決課題之手段The present invention has been made in view of the above problems, and an object thereof is to provide a processing method for suppressing occurrence of defects and dividing a wafer of wafers in a short time. Means to solve the problem

根據本發明的一態樣，可提供一種晶圓的加工方法，該晶圓的加工方法是沿著設定於晶圓之複數條分割預定線來分割晶圓，並包含： 載置步驟，將於其中一面貼附膠帶且在晶圓的內部的對應於該分割預定線之位置上形成有成為分割的起點的改質層之晶圓，隔著該膠帶來載置於加熱台；及 分割步驟，在藉由該加熱台加熱已載置於該加熱台的晶圓之後，以冷卻單元冷卻晶圓的露出之另一面的整體，且以改質層為起點而沿著分割預定線來分割晶圓， 在該分割步驟中，是藉由相應於該加熱與該冷卻的溫度差所產生之熱衝擊來將晶圓破斷。According to an aspect of the present invention, a method of processing a wafer by dividing a plurality of wafers along a plurality of predetermined lines set on a wafer, and comprising: a loading step, a wafer having a modified layer formed on one side of the wafer corresponding to the predetermined dividing line at a position corresponding to the predetermined dividing line, placed on the heating stage via the tape; and a dividing step After the wafer that has been placed on the heating stage is heated by the heating stage, the entire exposed surface of the wafer is cooled by the cooling unit, and the wafer is divided along the dividing line by using the modified layer as a starting point. In the dividing step, the wafer is broken by a thermal shock corresponding to a temperature difference between the heating and the cooling.

在本發明的一態樣中，亦可為該冷卻單元是朝晶圓的另一面的整體噴射冷卻用的流體。又，亦可為該冷卻單元具備與晶圓的該另一面的整體相接之接觸面，並藉由帕耳帖(Peltier)效應來冷卻該接觸面。 發明效果In one aspect of the invention, the cooling unit may also spray a cooling fluid toward the entire surface of the wafer. Further, the cooling unit may have a contact surface that is in contact with the entire other surface of the wafer, and the contact surface may be cooled by a Peltier effect. Effect of the invention

在本發明的一態樣之晶圓的加工方法中，由於是利用相應於加熱與冷卻的溫度差所產生的熱衝擊(thermal shock)來分割晶圓，因此不需要對晶圓施加力學上之力。據此，可以防止起因於力學上之力的晶圓的缺損。又，由於是利用作用於晶圓的整體之熱衝擊，因此可在短時間內沿著所有的分割預定線來分割晶圓。In the method of processing a wafer according to an aspect of the present invention, since the wafer is divided by a thermal shock corresponding to a temperature difference between heating and cooling, it is not necessary to apply a mechanical force to the wafer. force. According to this, it is possible to prevent the wafer from being damaged due to the mechanical force. Further, since the thermal shock acting on the entire wafer is utilized, the wafer can be divided along all of the planned dividing lines in a short time.

用以實施發明之形態 參照附圖，說明本發明的一態樣之實施形態。本實施形態之晶圓的加工方法包含載置步驟(參照圖2(B))、及分割步驟(參照圖2(B)及圖2(C))。MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to the accompanying drawings. The wafer processing method of the present embodiment includes a mounting step (see FIG. 2(B)) and a dividing step (see FIGS. 2(B) and 2(C)).

在載置步驟中，是將形成有成為分割的起點之改質層的晶圓，載置於加熱用的加熱台。在分割步驟中，是將晶圓從接觸於加熱台之其中一面側進行加熱，之後，將露出之另一面的整體冷卻，並藉由相應於加熱與冷卻之溫度差而產生之熱衝擊(thermal shock)來將晶圓破斷。以下，針對本實施形態之晶圓的加工方法，進行詳細敘述。In the placing step, the wafer on which the modified layer which is the starting point of the division is formed is placed on the heating stage for heating. In the dividing step, the wafer is heated from one side contacting the heating stage, and then the entire exposed surface is cooled, and the thermal shock is generated by a temperature difference corresponding to heating and cooling (thermal Shock) to break the wafer. Hereinafter, the method of processing the wafer of the present embodiment will be described in detail.

圖1(A)是示意地顯示本實施形態之晶圓的構成例之立體圖。如圖1(A)所示，晶圓11是以例如矽(Si)、砷化鎵(GaAs)等的半導體材料而形成為圓盤狀，且將其正面11a區分成中央的器件區域、及包圍器件區域之外周剩餘區域。Fig. 1(A) is a perspective view schematically showing a configuration example of a wafer of the embodiment. As shown in FIG. 1(A), the wafer 11 is formed into a disk shape by a semiconductor material such as germanium (Si) or gallium arsenide (GaAs), and the front surface 11a is divided into a central device region, and Surrounds the remaining area of the periphery of the device area.

器件區域是以排列成格子狀的複數條分割預定線(切割道)13進一步區劃成複數個區域，且在各個區域中形成有IC、LSI等器件15。再者，對晶圓11的材質、形狀、構造等並未限制。例如，也可以將由陶瓷、樹脂、金屬等的材料所形成之基板作為晶圓11來使用。The device region is further divided into a plurality of regions by a plurality of predetermined dividing lines (cutting streets) 13 arranged in a lattice shape, and devices 15 such as ICs and LSIs are formed in the respective regions. Furthermore, the material, shape, structure, and the like of the wafer 11 are not limited. For example, a substrate made of a material such as ceramic, resin, or metal may be used as the wafer 11.

圖1(B)是示意地顯示被環狀的框架所支撐之狀態的晶圓11之立體圖。如圖1(B)所示，在上述之晶圓11的正面11a側，貼附有直徑比晶圓11大之膠帶21。於膠帶21的外周部分固定環狀的框架23。藉此，可透過膠帶21將晶圓11支撐於框架23。Fig. 1(B) is a perspective view schematically showing the wafer 11 in a state of being supported by a ring-shaped frame. As shown in FIG. 1(B), a tape 21 having a larger diameter than the wafer 11 is attached to the front surface 11a side of the wafer 11. An annular frame 23 is fixed to the outer peripheral portion of the tape 21. Thereby, the wafer 11 can be supported by the frame 23 via the tape 21.

於以框架23支撐晶圓11之後，是在晶圓11的內部形成成為分割的起點之改質層。圖2(A)是示意地顯示用於在晶圓11的內部形成改質層之改質層形成步驟之局部截面側視圖。改質層形成步驟是利用例如圖2(A)所示之雷射加工裝置2來實施。After the wafer 11 is supported by the frame 23, a modified layer which is a starting point of the division is formed inside the wafer 11. 2(A) is a partial cross-sectional side view schematically showing a reforming layer forming step for forming a modified layer inside the wafer 11. The reforming layer forming step is carried out using, for example, the laser processing apparatus 2 shown in Fig. 2(A).

雷射加工裝置2具備有吸引、保持晶圓11之圓盤狀的保持台4。保持台4被連結於馬達等的旋轉驅動源(圖未示)，並繞著與鉛直方向大致平行的旋轉軸旋轉。又，在保持台4的下方，設置有移動機構(圖未示)，保持台4是藉由此移動機構而在水平方向上移動。The laser processing apparatus 2 is provided with a holding table 4 having a disk shape that attracts and holds the wafer 11. The holding table 4 is coupled to a rotation driving source (not shown) such as a motor, and is rotated about a rotation axis substantially parallel to the vertical direction. Further, a moving mechanism (not shown) is provided below the holding table 4, and the holding table 4 is moved in the horizontal direction by the moving mechanism.

保持台4的上表面是成為隔著膠帶21來吸引、保持晶圓11之正面11a側之保持面4a。此保持面4a是通過形成於保持台4的內部之流路4b等而連接於吸引源(圖未示)。在保持台4的周圍，設置有用於將支撐晶圓11之框架23固定的夾具6。The upper surface of the holding table 4 is a holding surface 4a that sucks and holds the front surface 11a side of the wafer 11 via the tape 21. This holding surface 4a is connected to a suction source (not shown) through a flow path 4b or the like formed inside the holding table 4. Around the holding table 4, a jig 6 for fixing the frame 23 supporting the wafer 11 is provided.

保持台4的上方配置有雷射加工單元8。雷射加工單元8是使以雷射振盪器(圖未示)產生脈衝振盪而成的雷射光束L聚光在被保持台4所吸引、保持的晶圓11之內部。雷射振盪器是構成為能夠振盪產生對晶圓11具有穿透性之波長(難以被吸收的波長)的雷射光束L。A laser processing unit 8 is disposed above the holding table 4. The laser processing unit 8 condenses the laser beam L that has been pulse-oscillated by a laser oscillator (not shown) inside the wafer 11 that is attracted and held by the holding stage 4. The laser oscillator is a laser beam L that is configured to oscillate to generate a wavelength (a wavelength that is difficult to be absorbed) that is transparent to the wafer 11.

在改質層形成步驟中，首先，是隔著膠帶21將晶圓11載置於保持台4，以使貼附於晶圓11的正面11a側之膠帶21與保持台4的保持面4a相面對。又，以夾具6固定框架23。若在此狀態下使吸引源的負壓作用，即可將晶圓11以背面11b側露出於上方之狀態來吸引、保持於保持台4。In the reforming layer forming step, first, the wafer 11 is placed on the holding table 4 via the tape 21 so that the tape 21 attached to the front surface 11a side of the wafer 11 and the holding surface 4a of the holding table 4 are face. Further, the frame 23 is fixed by the jig 6. When the negative pressure of the suction source is applied in this state, the wafer 11 can be attracted and held by the holding table 4 with the back surface 11b side exposed upward.

接著，使保持台4移動、旋轉，以將雷射加工裝置8的位置於成為對象之分割預定線13的上方對準。之後，從雷射加工單元8朝向晶圓11照射雷射光束L，並且使保持台4在相對於對象之分割預定線13平行的方向上移動。Next, the holding table 4 is moved and rotated to align the position of the laser processing apparatus 8 above the target division line 13 to be formed. Thereafter, the laser beam L is irradiated from the laser processing unit 8 toward the wafer 11, and the holding table 4 is moved in a direction parallel to the planned dividing line 13 of the object.

藉此，可以使其在雷射光束L的聚光點附近產生多光子吸收，而在晶圓11的內部形成沿著分割預定線13之改質層17。可將雷射光束L之波長或功率密度、重覆頻率、保持台4的移動速度等的條件，設定在可以形成適合於晶圓11的分割之改質層17的範圍內。當重覆此動作，而沿著所有的分割預定線13在晶圓11的內部(對應於分割預定線17之位置)形成改質層17時，即結束改質層形成步驟。Thereby, multiphoton absorption can be caused in the vicinity of the light collecting point of the laser beam L, and the reforming layer 17 along the dividing line 13 can be formed inside the wafer 11. The conditions such as the wavelength or power density of the laser beam L, the repetition frequency, and the moving speed of the holding stage 4 can be set within a range in which the reforming layer 17 suitable for the division of the wafer 11 can be formed. When this action is repeated, and the reforming layer 17 is formed inside the wafer 11 (corresponding to the position of the planned dividing line 17) along all the dividing planned lines 13, the reforming layer forming step is ended.

將已經過改質層形成步驟後之晶圓11以本實施形態之晶圓的加工方法來分割。具體而言，首先是實施載置步驟，該載置步驟是將形成有成為分割的起點之改質層17之晶圓11載置於加熱台。圖2(B)為示意地顯示載置步驟等之局部截面側視圖。The wafer 11 which has undergone the reforming layer forming step is divided by the processing method of the wafer of this embodiment. Specifically, first, a mounting step of placing the wafer 11 on which the modified layer 17 serving as the starting point of the division is formed is placed on the heating stage. Fig. 2(B) is a partial cross-sectional side view schematically showing a placing step and the like.

如圖2(B)所示，在載置步驟中，是隔著膠帶21來將晶圓11載置於加熱台12的上表面12a，其中該加熱台12是形成為直徑比晶圓11大之圓盤狀。藉此，使晶圓11之背面11b側朝上方露出。在加熱台12的上表面12a側，設置有加熱用的加熱器14。可以藉由此加熱器14，加熱晶圓11的正面11a側的整體。As shown in FIG. 2(B), in the placing step, the wafer 11 is placed on the upper surface 12a of the heating stage 12 via the tape 21, wherein the heating stage 12 is formed to have a larger diameter than the wafer 11. Disc shape. Thereby, the side of the back surface 11b of the wafer 11 is exposed upward. A heater 14 for heating is provided on the upper surface 12a side of the heating stage 12. The entirety of the front surface 11a side of the wafer 11 can be heated by the heater 14.

在載置步驟之後，是實施藉由熱衝擊來將晶圓11破斷之分割步驟。在分割步驟中，首先，是以上述之加熱器14將晶圓11的正面11a側的整體加熱至規定的溫度。雖然加熱的條件是任意的，但在本實施形態中，是將加熱器14的溫度設定為95℃，並將晶圓11的正面11a側加熱至85℃以上。像這樣，藉由將晶圓11的正面11a側加熱至85℃以上，而變得容易形成熱衝擊的產生所必要的溫度差。After the placing step, a dividing step of breaking the wafer 11 by thermal shock is performed. In the dividing step, first, the entire heater 11 is used to heat the entire front side 11a side of the wafer 11 to a predetermined temperature. Although the heating conditions are arbitrary, in the present embodiment, the temperature of the heater 14 is set to 95 ° C, and the front surface 11 a side of the wafer 11 is heated to 85 ° C or higher. As described above, by heating the front surface 11a side of the wafer 11 to 85 ° C or higher, it is easy to form a temperature difference necessary for the generation of thermal shock.

再者，在本實施形態中，雖然是在載置步驟的完成後作動加熱器14，但亦可於載置步驟的完成之前(載置步驟的實施前或實施中)作動加熱器14。在此情況下，由於可在載置步驟中使晶圓11載置於加熱台12後隨即加熱晶圓11，因此可以進一步縮短晶圓11的分割所需要之時間並提升生產量(throughput)。Further, in the present embodiment, the heater 14 is actuated after the completion of the placing step, but the heater 14 may be actuated before the completion of the placing step (before or during the mounting step). In this case, since the wafer 11 can be heated after the wafer 11 is placed on the heating stage 12 in the placing step, the time required for the division of the wafer 11 can be further shortened and the throughput can be improved.

在加熱晶圓11之後，是將露出之背面11b的整體急速地冷卻，以在晶圓11的內部(正面11a與背面11b之間)形成大的溫度差。如圖2(B)所示，在本實施形態中，是以對晶圓11的背面11b側之整體噴附冷卻用的流體F之方法，來形成必要的溫度差。After the wafer 11 is heated, the entire exposed back surface 11b is rapidly cooled to form a large temperature difference inside the wafer 11 (between the front surface 11a and the back surface 11b). As shown in Fig. 2(B), in the present embodiment, a method of applying a cooling fluid F to the entire back surface 11b side of the wafer 11 is used to form a necessary temperature difference.

具體而言，是在加熱台12的上方配置噴射噴嘴(冷卻單元)22，並從此噴射嘴22對晶圓11的背面11b噴射冷卻用的流體F。作為冷卻用的流體F，可以使用例如已充分冷卻之空氣等的氣體、或水、溶液等之液體。在利用液體來作為流體F之情況下，較佳的是將此液體預先冷卻至不會凍結之程度的較低溫度(例如，比凝固點高0.1℃~10℃左右之溫度)。Specifically, an injection nozzle (cooling unit) 22 is disposed above the heating stage 12, and the cooling fluid F is sprayed from the injection nozzle 22 to the back surface 11b of the wafer 11. As the fluid F for cooling, for example, a gas such as air that has been sufficiently cooled, or a liquid such as water or a solution can be used. In the case where a liquid is used as the fluid F, it is preferred to preliminarily cool the liquid to a lower temperature (for example, a temperature higher by about 0.1 to 10 ° C than the freezing point).

又，亦可利用可以藉由氣化來奪取熱量之低溫的揮發性的液體等來作為流體F。在此情況下，由於可更快地冷卻晶圓11的背面11b側，因此變得容易形成必要的溫度差。在此，必要的溫度差是指可達到超過晶圓11的破斷應力之熱衝擊之溫度差。此溫度差可相應於例如晶圓11的材質或厚度、改質層17的狀態等來決定。流體F的種類或流量等的條件，是設定在可以實現必要的溫度差之範圍內。Further, as the fluid F, a volatile liquid or the like which can take heat at a low temperature by vaporization can be used. In this case, since the back surface 11b side of the wafer 11 can be cooled more quickly, it becomes easy to form a necessary temperature difference. Here, the necessary temperature difference means a temperature difference that can reach a thermal shock exceeding the breaking stress of the wafer 11. This temperature difference can be determined in accordance with, for example, the material or thickness of the wafer 11, the state of the reforming layer 17, and the like. Conditions such as the type and flow rate of the fluid F are set within a range in which a necessary temperature difference can be achieved.

當將冷卻用的流體F噴附於晶圓11的背面11b側的整體，而於晶圓11的內部形成充分的溫度差時，會藉由熱衝擊來將晶圓11以改質層17為起點而破斷。圖2(C)是示意地顯示已將晶圓11破斷之狀態的局部截面側視圖。當沿著分割預定線13將晶圓11分割成複數個器件晶片19時，分割步驟即結束。When the fluid F for cooling is sprayed onto the entire back surface 11b side of the wafer 11 to form a sufficient temperature difference inside the wafer 11, the wafer 11 is modified by the thermal impact. Broken from the starting point. Fig. 2(C) is a partial cross-sectional side view schematically showing a state in which the wafer 11 has been broken. When the wafer 11 is divided into a plurality of device wafers 19 along the division planned line 13, the dividing step is ended.

如以上，在本實施形態之晶圓的加工方法中，由於是利用相應於加熱與冷卻的溫度差所產生之熱衝擊(thermal shock)來分割晶圓11，因此不需要對晶圓11施加力學上的力。據此，可以防止起因於力學上的力之晶圓11的缺損。又，由於利用作用於晶圓11的整體之熱衝擊，因此可以在短時間內沿著所有的分割預定線13來分割晶圓11。As described above, in the wafer processing method of the present embodiment, since the wafer 11 is divided by the thermal shock generated by the temperature difference between heating and cooling, it is not necessary to apply the mechanics to the wafer 11. The force on it. According to this, it is possible to prevent the defect of the wafer 11 caused by the mechanical force. Moreover, since the thermal shock acting on the entire wafer 11 is utilized, the wafer 11 can be divided along all the division planned lines 13 in a short time.

再者，本發明並不限定於上述實施形態的記載，可作各種變更而實施。例如，在上述實施形態之晶圓的加工方法中，雖然是將膠帶21貼附於晶圓11的正面11a側，並使背面11b側露出，但亦可將膠帶21貼附於背面11b側，並使正面11a側露出。也就是說，也可以加熱晶圓11的背面11b側，並冷卻正面11a側。Furthermore, the present invention is not limited to the description of the above embodiments, and can be implemented in various modifications. For example, in the method of processing a wafer according to the above-described embodiment, the tape 21 is attached to the front surface 11a side of the wafer 11 and the back surface 11b side is exposed. However, the tape 21 may be attached to the back surface 11b side. The front side 11a side is exposed. That is, the side of the back surface 11b of the wafer 11 may be heated and the side of the front surface 11a may be cooled.

又，在上述實施形態之晶圓的加工方法中，雖然是以將冷卻用的流體F噴附至晶圓11的背面11b側之整體的方法來形成溫度差，但在溫度差的形成方法上並未限制。圖3(A)是示意地顯示變形例之分割步驟之局部截面側視圖，圖3(B)是示意地顯示已將晶圓破斷之狀態之局部截面側視圖。Further, in the method of processing a wafer according to the above-described embodiment, the temperature difference is formed by the method of spraying the cooling fluid F onto the entire back surface 11b side of the wafer 11, but the temperature difference is formed. There are no restrictions. Fig. 3(A) is a partial cross-sectional side view schematically showing a dividing step of a modification, and Fig. 3(B) is a partial cross-sectional side view schematically showing a state in which the wafer has been broken.

在變形例之分割步驟中，是利用圖3(A)所示之帕耳帖元件(冷卻單元)32而在晶圓11形成溫度差。帕耳帖元件32是例如藉由接合相異之2種金屬而形成，並具備有當供給電力(電壓)時會被冷卻之冷卻面(接觸面)32a。In the dividing step of the modification, a temperature difference is formed in the wafer 11 by using the Peltier element (cooling unit) 32 shown in FIG. 3(A). The Peltier element 32 is formed by, for example, joining two different metals, and is provided with a cooling surface (contact surface) 32a that is cooled when electric power (voltage) is supplied.

此冷卻面32a是形成為可以接觸於晶圓11的背面11b側的整體之大小。又，在帕耳帖元件32上，連接有用於供給電力(電壓)的配線34。The cooling surface 32a is formed to be in contact with the entire size of the back surface 11b side of the wafer 11. Further, a wiring 34 for supplying electric power (voltage) is connected to the Peltier element 32.

在變形例之分割步驟中，是藉由與上述實施形態之分割步驟相同的順序來加熱晶圓11的正面11a側的整體。當加熱晶圓11之後，是隔著熱傳導率較高的凝膠(gel)36等，來使上述之帕耳帖元件32的冷卻面32a接觸於晶圓11的背面11b側。但是，不一定要使用凝膠36。In the dividing step of the modification, the entire front side 11a side of the wafer 11 is heated in the same order as the dividing step of the above embodiment. After the wafer 11 is heated, the cooling surface 32a of the above-described Peltier element 32 is brought into contact with the back surface 11b side of the wafer 11 via a gel 36 or the like having a high thermal conductivity. However, it is not necessary to use the gel 36.

之後，透過配線34來對帕耳帖元件32供給電力(電壓)，並冷卻帕耳帖元件32的冷卻面32a。藉此，可急速地冷卻晶圓11的背面11b側的整體，並可以在晶圓11的內部(正面11a與背面11b之間)形成大的溫度差。Thereafter, electric power (voltage) is supplied to the Peltier element 32 through the wiring 34, and the cooling surface 32a of the Peltier element 32 is cooled. Thereby, the entirety of the back surface 11b side of the wafer 11 can be rapidly cooled, and a large temperature difference can be formed inside the wafer 11 (between the front surface 11a and the back surface 11b).

當於晶圓11的內部形成充分的溫度差時，會藉由熱衝擊將晶圓11以改質層17為起點來破斷。如圖3(B)所示，當沿著分割預定線13將晶圓11分割成複數個器件晶片19時，分割步驟即結束。When a sufficient temperature difference is formed inside the wafer 11, the wafer 11 is broken by the thermal shock by using the modified layer 17 as a starting point. As shown in FIG. 3(B), when the wafer 11 is divided into a plurality of device wafers 19 along the division planned line 13, the dividing step is ended.

再者，在此變形例中，雖然是在對晶圓11進行加熱之後，使帕耳帖元件32的冷卻面32a接觸於背面11b側，但亦可在加熱前使其接觸晶圓11。又，也可以在對晶圓11進行加熱之後，讓已預先冷卻之帕耳帖元件32的冷卻面32a接觸於背面11b側。在此情況下，由於可更快地冷卻晶圓11的背面11b側，因此變得容易形成必要的溫度差。Further, in this modification, after the wafer 11 is heated, the cooling surface 32a of the Peltier element 32 is brought into contact with the back surface 11b side, but it may be brought into contact with the wafer 11 before heating. Further, after the wafer 11 is heated, the cooling surface 32a of the pre-cooled Peltier element 32 may be brought into contact with the back surface 11b side. In this case, since the back surface 11b side of the wafer 11 can be cooled more quickly, it becomes easy to form a necessary temperature difference.

另外，上述實施形態之構造、方法等，只要在不脫離本發明的目的之範圍內，均可適當變更而實施。In addition, the structure, the method, and the like of the above-described embodiments can be appropriately modified and implemented without departing from the scope of the invention.

11‧‧‧晶圓11‧‧‧ wafer

11a‧‧‧正面11a‧‧‧ positive

11b‧‧‧背面11b‧‧‧Back

13‧‧‧分割預定線(切割道)13‧‧‧Spched line (cutting lane)

15‧‧‧器件15‧‧‧Device

17‧‧‧改質層17‧‧‧Modified layer

19‧‧‧器件晶片19‧‧‧Device Wafer

21‧‧‧膠帶21‧‧‧ Tape

23‧‧‧框架23‧‧‧Frame

2‧‧‧雷射加工裝置2‧‧‧ Laser processing equipment

4‧‧‧保持台4‧‧‧ Keeping the table

4a‧‧‧保持面4a‧‧‧ Keep face

4b‧‧‧流路4b‧‧‧flow path

6‧‧‧夾具6‧‧‧Clamp

8‧‧‧雷射加工單元8‧‧‧Laser processing unit

12‧‧‧加熱台12‧‧‧heating station

12a‧‧‧上表面12a‧‧‧Upper surface

14‧‧‧加熱器14‧‧‧heater

22‧‧‧噴射噴嘴(冷卻單元)22‧‧‧jet nozzle (cooling unit)

32‧‧‧帕耳帖元件(冷卻單元)32‧‧‧Paltier components (cooling unit)

32a‧‧‧冷卻面(接觸面)32a‧‧‧Cooling surface (contact surface)

34‧‧‧配線34‧‧‧Wiring

36‧‧‧凝膠36‧‧‧ gel

F‧‧‧流體F‧‧‧ fluid

L‧‧‧雷射光束L‧‧‧Laser beam

圖1(A)為示意地顯示晶圓的構成例之立體圖，圖1(B)為示意地顯示被環狀的框架所支撐之狀態的晶圓之立體圖。 圖2(A)為示意地顯示改質層形成步驟之局部截面側視圖，圖2(B)為示意地顯示載置步驟及分割步驟之局部截面側視圖，圖2(C)為示意地顯示已將晶圓破斷後之狀態之局部截面側視圖。 圖3(A)為示意地顯示變形例之分割步驟之局部截面側視圖，圖3(B)為示意地顯示已將晶圓破斷後之狀態之局部截面側視圖。1(A) is a perspective view schematically showing a configuration example of a wafer, and FIG. 1(B) is a perspective view schematically showing a wafer supported by a ring-shaped frame. 2(A) is a partial cross-sectional side view schematically showing a step of forming a modified layer, and FIG. 2(B) is a partial cross-sectional side view schematically showing a placing step and a dividing step, and FIG. 2(C) is a schematic view A partial cross-sectional side view of the state after the wafer has been broken. Fig. 3(A) is a partial cross-sectional side view schematically showing a dividing step of a modification, and Fig. 3(B) is a partial cross-sectional side view schematically showing a state in which the wafer has been broken.

Claims (3)

一種晶圓的加工方法，是沿著設定於晶圓之複數條分割預定線來分割晶圓，該晶圓的加工方法之特徵在於： 包含： 載置步驟，將於其中一面貼附膠帶且在晶圓的內部的對應於該分割預定線之位置上形成有成為分割的起點的改質層之晶圓，隔著該膠帶來載置於加熱台；及 分割步驟，在藉由該加熱台加熱已載置於該加熱台的晶圓之後，以冷卻單元冷卻晶圓的露出之另一面的整體，且以該改質層為起點而沿著該分割預定線來分割晶圓， 在該分割步驟中，是藉由相應於該加熱與該冷卻的溫度差所產生之熱衝擊來將晶圓破斷。A method for processing a wafer is to divide a wafer along a plurality of predetermined dividing lines set on a wafer. The processing method of the wafer is characterized by: comprising: placing a step, attaching a tape to one side and a wafer having a modified layer formed as a starting point of the division at a position corresponding to the predetermined dividing line in the interior of the wafer, placed on the heating stage via the tape; and a dividing step of heating by the heating stage After being placed on the wafer of the heating stage, the cooling unit cools the entirety of the exposed other side of the wafer, and the wafer is divided along the dividing line by using the modified layer as a starting point, in the dividing step. The wafer is broken by a thermal shock corresponding to the temperature difference between the heating and the cooling. 如請求項1之晶圓的加工方法，其中該冷卻單元是對晶圓的該另一面的整體噴射冷卻用的流體。A method of processing a wafer according to claim 1, wherein the cooling unit is a fluid for cooling the entire surface of the wafer. 如請求項1之晶圓的加工方法，其中該冷卻單元具備與晶圓的該另一面的整體相接之接觸面，並藉由帕耳帖效應來冷卻該接觸面。The method of processing a wafer according to claim 1, wherein the cooling unit has a contact surface that is in contact with the other side of the wafer, and the contact surface is cooled by a Peltier effect.