JP3934476B2 - Cleaving method and apparatus using frozen chucking in laser cleaving - Google Patents
Cleaving method and apparatus using frozen chucking in laser cleaving Download PDFInfo
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- JP3934476B2 JP3934476B2 JP2002134884A JP2002134884A JP3934476B2 JP 3934476 B2 JP3934476 B2 JP 3934476B2 JP 2002134884 A JP2002134884 A JP 2002134884A JP 2002134884 A JP2002134884 A JP 2002134884A JP 3934476 B2 JP3934476 B2 JP 3934476B2
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- substrate
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Description
【0001】
【発明の属する技術分野】
本発明は、シリコンウエハや結晶ガラス等の硬脆性を有する被処理基板を切断加工する方法および装置に関するもので、特にレーザを使用して被処理基板を割断する際に被処理基板を氷で保持冷却する冷凍チャッキング装置を有するレーザ割断加工方法およびその装置に関するものである。
【0002】
【従来の技術】
従来より半導体デバイスの製造においては、ウエハ上にパターンを形成した後、ダイヤモンド砥粒を用いたブレードによる切断加工が行われている。この場合は、切断に際して使用される加工液、発生する切り屑や脱落した砥粒等がウエハ上のデバイスの汚染要因となっている。これに対して最近注目されているレーザ割断は、レーザ照射部の温度上昇による熱応力によって亀裂を進展させるものであり、切り屑を出さず、亀裂の進行が早い等のメリットがあることから歩留りの大幅な改善が期待されている。
【0003】
しかしながら、亀裂の進行をより早めるためには照射温度を上げる必要があり、エネルギを多く要すると同時に、切断面に熱損傷が発生する等の問題がある。この解決のために、研磨面を液体窒素や氷水によって冷却しつつ、非研磨面にYAGレーザを照射して良好な割断面を得る工夫もなされている。また冷却手段としてペルチェ素子を使用した物なども提案されている(特開平9−29472号)。
【0004】
上記公報に記載されている割断方法は、セラミック基板の裏面をペルチェ素子で冷却したエッジ治具を利用して冷却し、表面にレーザ光を照射することでセラミック基板を割断するものである。
【0005】
【発明が解決しようとする課題】
しかしながらこのものは、基板を保持するための固定機構が必要となり、そのための設備が複雑となり、装置全体が高価となる等の問題がある。
そこで、本発明は、ペルチェ素子などの冷却装置を利用して、材料とチャック間の微小な隙間にある液体を凍結させて、割断材料を保持すると同時に素子面を冷却するレーザ割断加工における冷凍チャッキング方法および装置を提供することにより、上記問題点を解決することを目的とする。
【0006】
本発明の方法によりレーザ照射面と反対側の温度差を大きくすることにより、レーザ出力を抑えることも可能にし、チャック保持も別の手段で行わなくてもよいため、非常に簡単で品位のよいレーザ割断を行うことが可能となる。またペルチェ素子に逆電圧を印加することで、凍結した液体を溶かすことができるので割断したチップを瞬時に取り出すことができる。
【0007】
このため、本発明が採用した技術手段は、
被処理基板の一方側の面を冷却し、他側の面にレーザ照射して被処理基板を割断するレーザ割断において、ペルチェ素子によって冷却される載置台上に被処理基板を載置し、さらに同載置台と被処理基板との間に水供給手段から水を供給し、前記ペルチェ素子によって前記水を凍らせ、この氷によって被処理基板を載置台上に保持した状態でレーザ割断することを特徴とする被処理基板の割断方法である。
また、被処理基板の一方側の面を冷却し、他側の面にレーザ照射して被処理基板を割断するレーザ割断加工に用いる割断装置であって、前記装置は、ペルチェ素子と、ペルチェ素子上に設けた載置台と、該載置台に水を供給する水供給手段と、前記載置台上に前記水供給手段によって供給される水により被処理基板を前記ペルチェ素子によって凍結させた氷によって保持冷却すべく構成した冷凍チャッキング装置とを備えたことを特徴とする割断装置である。
また、前記水は載置台と被処理基板との間に垂らす蒸留水であることを特徴とする割断装置である。
また、前記ペルチェ素子の下面には放熱部材が設けられていることを特徴とする割断装置である。
【0008】
【実施の形態】
以下、本発明の実施形態を説明すると、図1は本発明に係る冷凍チャッキング装置の概略図である。
【0009】
図において、1は冷却容器、2は容器1内に貯留した氷水、3は放熱部材、4はペルチェ素子などの冷却装置、5は被処理基板を保持するための載置台、6は被処理基板(シリコンウエハや結晶ガラス等)である。冷却容器1の上にはペルチェ素子などの冷却装置4を載せるための放熱部材3が載置されており、放熱部材3には多数のフィン3aが形成され、冷却容器1内に貯留してある氷水2と合わせて放熱部材を冷却できる構成となっている。この放熱部材3はペルチェ素子などの冷却装置4の加熱側からでる熱を放熱するためのものである。
【0010】
放熱部材3上にはペルチェ素子などの冷却装置4が配置されており、ペルチェ素子などの冷却装置4には直流電源(12ボルト)が接続され、電流の流す向きによりペルチェ素子などの冷却装置4上に載せた載置台5を冷却あるいは加熱できるようになっている。載置台5は熱伝導性に優れた材料(例えば銅等)で構成されており、載置台5上に載せた被処理基板6をペルチェ素子などの冷却装置4により冷却あるいは加熱する。また載置台5に載置された被処理基板との間には図示せぬ液体供給手段から液体を滴下できるようになっている。
【0011】
上記構成からなる冷凍チャッキングの使用法を説明する。
被処理基板6を載置台5上に載せ、被処理基板6と載置台5との間に前記液体供給手段から液体を供給しペルチェ素子などの冷却装置4に通電すると、ペルチェ素子などの冷却装置により被処理基板6と載置台5との間の液体が凍結する。この凍結によって載置台5上の被処理基板6は載置台5上に保持されると同時に冷却される。このように保持された被処理基板6にレーザ光7を照射することで、被処理基板をレーザ光7により割断することができる。またペルチェ素子などの冷却装置に逆電圧をかけることで非処理基板を保持していた凍結した液体を溶かすことができ、これにより被処理基板6を容易に載置台5から取り出すことができる。
【0012】
以上、本発明の実施の形態について説明してきたが、ペルチェ素子などの冷却装置は必ずしも図示のような放熱部材によって支持する必要はない。また、載置台の形状等も被処理基板との間で液体を凍らせ、被処理基板を固定できるものであれば、種々の形状のものを使用することができる。またレーザ光もYAGレーザに限定することなく他のレーザ光を使用することも可能である。
さらに、本発明はその精神または主要な特徴から逸脱することなく、他のいかなる形でも実施できる。そのため、前述の実施形態はあらゆる点で単なる例示にすぎず限定的に解釈してはならない。
【0013】
【発明の効果】
以上、詳細に説明したように、本発明によれば、半導体デバイス等の切断において、切り屑等の発生が無いため、クリーンルーム等を必要とせずに加工できる。さらに固定と冷却を兼ねているので設備が簡単という利点があり、広い分野で使用される可能性がある。またレーザ照射部の熱損傷を軽減できるため、レーザの出力を大きく設定できる。加工材料を冷却することで、より大きな熱応力を発生させることができる。クリーンルーム内で適用が可能であり、ダイシング工程の段取りを減少させることができる。等の優れた効果を奏することができる。
【図面の簡単な説明】
【図1】本発明に係る冷凍チャッキング装置の概略図である。
【符号の説明】
1 冷却容器
2 氷水
3 放熱部材
4 ペルチェ素子などの冷却装置
5 載置台
6 被処理基板
7 レーザ光[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method and apparatus for cutting a substrate to be processed having hard and brittleness, such as a silicon wafer or crystal glass, and particularly to hold the substrate to be processed with ice when cleaving the substrate to be processed using a laser. The present invention relates to a laser cleaving method having a refrigerated chucking device for cooling and a device therefor.
[0002]
[Prior art]
Conventionally, in the manufacture of semiconductor devices, after a pattern is formed on a wafer, cutting with a blade using diamond abrasive grains has been performed. In this case, the processing fluid used for cutting, the generated chips, the dropped abrasive grains, and the like are factors that contaminate the device on the wafer. On the other hand, the laser cleaving that has been attracting attention recently is a process that causes cracks to develop due to thermal stress due to the temperature rise of the laser irradiation part, and does not produce chips and has the advantage of rapid progress of cracks. A significant improvement is expected.
[0003]
However, in order to accelerate the progress of the crack, it is necessary to raise the irradiation temperature, which requires a lot of energy, and at the same time, there is a problem that thermal damage occurs on the cut surface. In order to solve this problem, a device has been devised in which a non-polished surface is irradiated with a YAG laser while a polished surface is cooled with liquid nitrogen or ice water to obtain a good fracture surface. A device using a Peltier element as a cooling means has also been proposed (Japanese Patent Laid-Open No. 9-29472).
[0004]
The cleaving method described in the above publication is a method of cleaving the ceramic substrate by cooling the back surface of the ceramic substrate using an edge jig cooled by a Peltier element and irradiating the surface with laser light.
[0005]
[Problems to be solved by the invention]
However, this requires a fixing mechanism for holding the substrate, and the equipment for that is complicated, and the entire apparatus is expensive.
Accordingly, the present invention utilizes a cooling device such as a Peltier device, material and frozen the minute gap near Ru liquid between the chuck, frozen in a laser breaking process for cooling at the same time the element surface when holding the fracture material An object of the present invention is to solve the above problems by providing a chucking method and apparatus.
[0006]
By increasing the temperature difference on the side opposite to the laser irradiation surface by the method of the present invention, it is possible to suppress the laser output, and the chuck holding may not be performed by another means, so it is very simple and high quality. Laser cleaving can be performed. Further, by applying a reverse voltage to the Peltier element , the frozen liquid can be melted, so that the cleaved chip can be taken out instantly.
[0007]
For this reason, the technical means adopted by the present invention are:
In laser cleaving in which one surface of the substrate to be processed is cooled and the other surface is irradiated with laser to cleave the substrate to be processed, the substrate to be processed is mounted on a mounting table cooled by a Peltier element, and supplying water from the water supply means between the same table and the substrate to be processed, frozen the water I by the Peltier element, the laser cleaving while holding onto mounting table target substrate by the ice A cleaving method for a substrate to be processed .
Further, the present invention is a cleaving apparatus used for laser cleaving that cools one surface of a substrate to be processed and cleaves the substrate to be processed by irradiating the other surface with a laser, the apparatus comprising: a Peltier element; a Peltier element; A mounting table provided above, water supply means for supplying water to the mounting table, and the substrate to be processed are held on the mounting table by ice frozen by the Peltier element by water supplied by the water supply means. that a configured to cool the refrigeration chucking device is a fracturing device according to claim.
The cleaving apparatus is characterized in that the water is distilled water hanging between the mounting table and the substrate to be processed.
Further, the cleaving apparatus is characterized in that a heat radiating member is provided on the lower surface of the Peltier element.
[0008]
[Embodiment]
Hereinafter, an embodiment of the present invention will be described. FIG. 1 is a schematic view of a freezing chucking apparatus according to the present invention.
[0009]
In the figure, 1 is a cooling container, 2 is ice water stored in the container 1, 3 is a heat radiating member, 4 is a cooling device such as a Peltier element, 5 is a mounting table for holding the substrate to be processed, and 6 is a substrate to be processed. (Silicon wafer, crystal glass, etc.). A heat radiating member 3 for placing a cooling device 4 such as a Peltier element is placed on the cooling container 1. A large number of
[0010]
On the heat dissipation member 3 is the cooling device 4 is arranged such as a Peltier element, the cooling device 4, such as a Peltier element DC power supply (12 volts) is connected, a cooling device such as a Peltier element depending on the direction of flow of current 4 The mounting table 5 placed thereon can be cooled or heated. The mounting table 5 is made of a material having excellent thermal conductivity (for example, copper or the like), and the substrate to be processed 6 placed on the mounting table 5 is cooled or heated by a cooling device 4 such as a Peltier element. Further, a liquid can be dropped from a liquid supply means (not shown) between the substrate to be processed placed on the placing table 5.
[0011]
A method of using the frozen chucking having the above configuration will be described.
Placed on the
[0012]
Although the embodiments of the present invention have been described above, a cooling device such as a Peltier element does not necessarily have to be supported by a heat radiating member as shown. In addition, the mounting table can have various shapes as long as the substrate can be fixed by freezing the liquid with the substrate to be processed. Further, the laser beam is not limited to the YAG laser, and other laser beams can be used.
In addition, the present invention can be implemented in any other form without departing from the spirit or main features thereof. Therefore, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner.
[0013]
【The invention's effect】
As described above in detail, according to the present invention, there is no generation of chips or the like in the cutting of a semiconductor device or the like, so that it can be processed without requiring a clean room or the like. Furthermore, since it combines fixing and cooling, there is an advantage that the equipment is simple, and there is a possibility that it will be used in a wide range of fields. Moreover, since the thermal damage of the laser irradiation part can be reduced, the laser output can be set large. By cooling the work material, a larger thermal stress can be generated. It can be applied in a clean room, and the setup of the dicing process can be reduced. And the like.
[Brief description of the drawings]
FIG. 1 is a schematic view of a freezing chucking device according to the present invention.
[Explanation of symbols]
1 the
Claims (4)
Priority Applications (1)
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JP2002134884A JP3934476B2 (en) | 2002-05-10 | 2002-05-10 | Cleaving method and apparatus using frozen chucking in laser cleaving |
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JP2002134884A JP3934476B2 (en) | 2002-05-10 | 2002-05-10 | Cleaving method and apparatus using frozen chucking in laser cleaving |
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KR100514995B1 (en) * | 2004-09-30 | 2005-09-15 | 주식회사 이오테크닉스 | Laser processing apparatus and method using tec module |
JP4809632B2 (en) | 2005-06-01 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
DE102005062230A1 (en) * | 2005-12-21 | 2007-06-28 | Jenoptik Automatisierungstechnik Gmbh | Method and device for separating slices of brittle material, in particular wafers |
JP4548381B2 (en) * | 2006-04-18 | 2010-09-22 | トヨタ自動車株式会社 | Insulator, rotating electric machine, manufacturing method thereof, and electric vehicle |
TWI409122B (en) * | 2007-07-13 | 2013-09-21 | Mitsuboshi Diamond Ind Co Ltd | A method for processing a brittle material substrate and a crack forming apparatus for the method |
JP5631160B2 (en) * | 2010-11-09 | 2014-11-26 | 株式会社東京精密 | Work dicing apparatus and work dicing method |
JP5887928B2 (en) * | 2011-12-28 | 2016-03-16 | 三星ダイヤモンド工業株式会社 | Method for dividing workpiece and method for dividing substrate with optical element pattern |
US9731381B2 (en) | 2013-11-22 | 2017-08-15 | Salvagnini Italia S.P.A. | Laser cutting head for machine tool |
CN103706957B (en) * | 2013-12-16 | 2015-07-22 | 中山大学 | Thermoelectric refrigerating device and laser processing method using same |
JP6573085B2 (en) * | 2018-01-17 | 2019-09-11 | 株式会社東京精密 | Laser dicing apparatus and laser dicing method |
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