TW201933410A

TW201933410A - Photoelectric element, electron beam apparatus and device manufacturing method

Info

Publication number: TW201933410A
Application number: TW107134434A
Authority: TW
Inventors: 佐藤真路
Original assignee: 日商尼康股份有限公司
Priority date: 2017-09-29
Filing date: 2018-09-28
Publication date: 2019-08-16
Also published as: WO2019064530A1

Abstract

An electron beam apparatus comprises: a plurality of light emitting units (84a); and an electron beam optical system that makes electrons into a plurality of electron beams (EB) and can bombard a target therewith, said electrons being emitted from a photoelectric conversion layer (60) by the photoelectric conversion layer (60) being irradiated with a plurality of light beams (LB) due to the light emission of the plurality of light emitting units, wherein the lights from each of the plurality of light emitting units are incident on the photoelectric conversion layer (60) without passing through a space.

Description

光電元件、電子束裝置及元件製造方法 Photoelectric element, electron beam device, and device manufacturing method

本發明係關於光電元件、電子束裝置及元件製造方法，特別是關於具有因光之照射而放射電子之光電轉換層的光電元件、將光照射於光電元件之光電轉換層並將從該光電元件產生之電子作為電子束照射於標的物的電子束裝置、及使用電子束裝置的元件製造方法。 The present invention relates to a photovoltaic element, an electron beam apparatus, and a device manufacturing method, and more particularly to a photovoltaic element having a photoelectric conversion layer that emits electrons due to irradiation of light, and a light-converting layer that irradiates light to the photovoltaic element and from the photovoltaic element The generated electrons serve as an electron beam device that irradiates the target with an electron beam, and a device manufacturing method using the electron beam device.

近年來，提出了一種將例如使用ArF光源之液浸曝光技術與帶電粒子束曝光技術(例如電子束曝光技術)互補的加以利用之互補(Complementary)微影。於互補性微影，係藉由例如在使用ArF光源之液浸曝光中利用雙層布局(double patterning)，形成單純的線與空間圖案(以下，適當的稱L/S圖案)。接著，通過使用電子束之曝光，進行線圖案之切斷、或通孔之形成。 In recent years, a complementary lithography that utilizes, for example, a liquid immersion exposure technique using an ArF light source and a charged particle beam exposure technique (e.g., electron beam exposure technique) has been proposed. In the complementary lithography, a simple line and space pattern (hereinafter, appropriately referred to as an L/S pattern) is formed by, for example, double patterning in immersion exposure using an ArF light source. Next, the line pattern is cut or the through holes are formed by exposure using an electron beam.

於互補性微影技術，可使用具備例如使用複數個遮蔽孔徑以進行光束之on、off之多光束光學系統的電子束曝光裝置(例如，參照專利文獻1)。然而，在使用切換電子束之on、off的切換功能時，卻存在裝置構成複雜等待改善之處。此外，不限於曝光裝置，使用電子束對標的物進行加工或處理、或是加工及處理之裝置、或檢査裝置等，亦可能產生同樣問題。 In the complementary lithography technique, an electron beam exposure apparatus having, for example, a multi-beam optical system that uses a plurality of occlusion apertures to perform on-off of a light beam can be used (for example, refer to Patent Document 1). However, when switching between the on and off switching of the electron beam is used, there is a situation in which the device configuration is complicated to wait for improvement. Further, the same problem may occur even if it is not limited to an exposure apparatus, a device for processing or processing an object by an electron beam, or a device for processing and processing, or an inspection device.

先行技術文獻Advanced technical literature

[專利文獻1]美國專利申請公開第2015/0200074號說明書 [Patent Document 1] US Patent Application Publication No. 2015/0200074

本發明第1態樣，提供一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；來自該複數個發光部之各個之光，不透過空間射入該光電轉換層。 According to a first aspect of the present invention, an electron beam apparatus is provided for irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a plurality of light emitting portions; and an electron beam An optical system that irradiates a plurality of light beams generated by light emission of at least a portion of the plurality of light-emitting portions onto the photoelectric conversion layer, and emits electrons from the photoelectric conversion layer as a plurality of electron beams; Light from each of the plurality of light-emitting portions is incident on the photoelectric conversion layer without a space.

本發明第2態樣，提供一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；來自該複數個發光部之各個之光，不透過氣體空間射入該光電轉換層。 According to a second aspect of the present invention, an electron beam apparatus is provided which irradiates light to a photoelectric conversion layer, and irradiates electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a plurality of light emitting sections; and an electron beam An optical system that irradiates a plurality of light beams generated by light emission of at least a portion of the plurality of light-emitting portions onto the photoelectric conversion layer, and emits electrons from the photoelectric conversion layer as a plurality of electron beams; Light from each of the plurality of light-emitting portions is incident on the photoelectric conversion layer without passing through a gas space.

本發明第3態樣，提供一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；來自該複數個發光部之各個之光，不透過真空空間射入該光電轉換層。 According to a third aspect of the present invention, there is provided an electron beam apparatus for irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a plurality of light emitting portions; and an electron beam An optical system that irradiates a plurality of light beams generated by light emission of at least a portion of the plurality of light-emitting portions onto the photoelectric conversion layer, and emits electrons from the photoelectric conversion layer as a plurality of electron beams; Light from each of the plurality of light-emitting portions is incident on the photoelectric conversion layer without passing through a vacuum space.

本發明第4態樣，提供一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：發光元件，其具有複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；該發光元件之至少一部分係兼作為配置該光電轉換層之電子放射面之真空室的間隔壁。 According to a fourth aspect of the present invention, there is provided an electron beam apparatus for irradiating light to a photoelectric conversion layer and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a light-emitting element having a plurality of light-emitting elements And an electron beam optical system that can be illuminated by the plurality of a plurality of light beams generated by at least a portion of the light emitted from the photoelectric conversion layer and emitted from the photoelectric conversion layer are irradiated to the target as a plurality of electron beams; at least a part of the light-emitting element also serves as the light-emitting device a partition wall of the vacuum chamber of the electron emitting surface of the conversion layer.

本發明第5態樣，提供一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：發光元件，其具有複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；該發光元件包含自發光型對比元件陣列。 According to a fifth aspect of the present invention, there is provided an electron beam apparatus for irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a light-emitting element having a plurality of light-emitting elements And an electron beam optical system that irradiates electrons emitted from the photoelectric conversion layer by a plurality of light beams generated by light emission of at least a part of the plurality of light-emitting portions as a plurality of electron beam irradiation In the subject matter; the illuminating element comprises an array of self-illuminating contrast elements.

本發明第6態樣，提供一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：複數個發光部；電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；以及複數個光學構件，係配置在該複數個發光部與該光電轉換層間之光路上；該複數個光學構件係在與該電子束光學系統之光軸交叉之方向並置；該複數個光學構件之各個，可將來自該複數個發光部中至少1個發光部之光聚光，並射出該複數條光束中之1條。 According to a sixth aspect of the present invention, an electron beam apparatus is provided for irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a plurality of light emitting sections; and electron beam optics a system for irradiating electrons emitted from the photoelectric conversion layer by a plurality of light beams generated by light emission of at least a part of the plurality of light-emitting portions, and irradiating the target object as a plurality of electron beams; a plurality of optical members disposed on an optical path between the plurality of light emitting portions and the photoelectric conversion layer; the plurality of optical members being juxtaposed in a direction crossing an optical axis of the electron beam optical system; each of the plurality of optical members The light from at least one of the plurality of light-emitting portions may be condensed and one of the plurality of light beams may be emitted.

本發明第7態樣，提供一種包含微影製程之元件製造方法：該微影製程，包含在標的物上形成線與空間圖案的動作、與使用第1至第6態樣中任一態樣之電子束裝置進行構成該線與空間圖案之線圖案之切斷的動作。 According to a seventh aspect of the present invention, there is provided a method of manufacturing a component including a lithography process, the lithography process comprising the act of forming a line and space pattern on a target object, and using any of the first to sixth aspects The electron beam device performs an operation of cutting the line pattern of the line and space pattern.

本發明第8態樣，提供一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：藉由光學元件之複數個發光部之至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作；來自該複數個發光部各個之光，不透過空間射入該光電轉換層。 According to an eighth aspect of the present invention, an exposure method is provided for irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a plurality of light emitting portions by an optical element Illuminating at least a portion of the light beam, irradiating the plurality of light beams to the photoelectric conversion layer; and radiating the plurality of light beams from the photoelectric conversion layer to emit radiation from the photoelectric conversion layer The electrons are transmitted through the electron beam optical system as a plurality of electron beams to the target object; and light from each of the plurality of light-emitting portions is incident on the photoelectric conversion layer without a space.

本發明第9態樣，提供一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：藉由光學元件之複數個發光部之至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作；來自該複數個發光部各個之光，不透過氣體空間射入該光電轉換層。 According to a ninth aspect of the present invention, there is provided an exposure method of irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a plurality of light emitting portions by an optical element Illuminating at least a portion of the light beam, irradiating the plurality of light beams to the photoelectric conversion layer; and irradiating the electrons emitted from the photoelectric conversion layer by the plurality of light beams through the photoelectric conversion layer as a plurality of electron beams The action of the electron beam on the target object; the light from each of the plurality of light-emitting portions is incident on the photoelectric conversion layer without passing through the gas space.

本發明第10態樣，提供一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：藉由光學元件之複數個發光部之至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作；來自該複數個發光部各個之光，不透過真空空間射入該光電轉換層。 According to a tenth aspect of the present invention, an exposure method is provided for irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a plurality of light emitting portions by an optical element Illuminating at least a portion of the light beam, irradiating the plurality of light beams to the photoelectric conversion layer; and irradiating the electrons emitted from the photoelectric conversion layer by the plurality of light beams through the photoelectric conversion layer as a plurality of electron beams The action of the electron beam on the target object; the light from each of the plurality of light-emitting portions is incident on the photoelectric conversion layer without passing through the vacuum space.

本發明第11態樣，提供一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：具有複數個發光部，藉由至少一部分係兼作為配置該光電轉換層之電子放射面之真空室之間隔壁的發光元件之該複數個發光部中至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作。 According to an eleventh aspect of the present invention, there is provided an exposure method of irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: having a plurality of light emitting portions, at least And a part of the plurality of light-emitting elements that are the light-emitting elements of the partition wall of the electron-emitting surface of the photoelectric conversion layer; and the plurality of light-emitting elements that emit light, and the plurality of light beams are irradiated to the photoelectric conversion layer; and The electrons emitted from the photoelectric conversion layer by the plurality of light beams are transmitted through the electron beam optical system as a plurality of electron beams to be irradiated onto the target object.

本發明第12態樣，提供一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：藉由包含具有複數個發光部之自發光型對比元件陣列之發光元件之該複數個發光部中至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作。 According to a twelfth aspect of the present invention, there is provided an exposure method of irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: comprising a plurality of light emitting portions The plurality of light emitting units of the light emitting elements of the self-luminous type contrast element array Illuminating at least a portion of the light, irradiating the plurality of light beams to the photoelectric conversion layer; and irradiating the electrons emitted from the photoelectric conversion layer by the plurality of light beams through the electron beam optical system as a plurality of stripes The action of the electron beam on the target.

本發明第13態樣，提供一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：將因複數個發光部中至少一部分之發光產生之複數條光束，透過配置在該複數個發光部與該光電轉換層間之光路上之複數個光學構件之至少一部分，照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作；該複數個光學構件係在與該電子束光學系統之光軸交叉之方向並置；該複數個光學構件之各個，可將來自該複數個發光部中至少1個發光部之光聚光，並射出該複數條光束中之1條。 According to a thirteenth aspect of the present invention, there is provided an exposure method of irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target, comprising: at least a part of a plurality of light-emitting portions And a plurality of optical beams generated by the illuminating light passing through at least a portion of the plurality of optical members disposed on the optical path between the plurality of light emitting portions and the photoelectric conversion layer, and irradiating the photoelectric conversion layer; and the plurality of light beams An electron emitted from the photoelectric conversion layer and transmitted through the photoelectric conversion layer is transmitted as an electron beam to the target as a plurality of electron beams; the plurality of optical members are intersected with an optical axis of the electron beam optical system The directions are juxtaposed; each of the plurality of optical members condenses light from at least one of the plurality of light-emitting portions and emits one of the plurality of light beams.

本發明第14態樣，提供一種包含微影製程之元件製造方法：該微影製程，包含在標的物上形成線與空間圖案的動作、與使用第8至第13態樣中任一態樣之曝光方法進行構成該線與空間圖案之線圖案之切斷的動作。 According to a fourteenth aspect of the present invention, there is provided a method of manufacturing a component including a lithography process, the lithography process comprising the act of forming a line and space pattern on a target object, and using any of the eighth to thirteenth aspects The exposure method performs an operation of cutting the line pattern of the line and the space pattern.

本發明第15態樣，提供一種光電元件，其具有因光之照射而放射電子之光電轉換層，其具備：複數個發光部；光穿透構件；以及該光電轉換層，係形成在該光穿透構件之光射出側；將來自該複數個發光部中至少1個之光，不透過氣體空間照射於該光電轉換層。 According to a fifteenth aspect of the invention, there is provided a photovoltaic element having a photoelectric conversion layer that emits electrons by irradiation of light, comprising: a plurality of light emitting portions; a light penetrating member; and the photoelectric conversion layer formed on the light The light emitting side of the penetrating member; the light from at least one of the plurality of light emitting portions is irradiated to the photoelectric conversion layer without passing through the gas space.

本發明第16態樣，提供一種光電元件，其具有因光之照射而放射電子之光電轉換層，其具備：複數個發光部；光穿透構件；以及該光電轉換層，係形成在該光穿透構件之光射出側；將來自該複數個發光部中至少1個之光，不透過真空空間照射於該光電轉換層。 According to a sixteenth aspect of the present invention, there is provided a photovoltaic element having a photoelectric conversion layer that emits electrons by irradiation of light, comprising: a plurality of light emitting portions; a light penetrating member; and the photoelectric conversion layer formed on the light The light emitting side of the penetrating member; the light from at least one of the plurality of light emitting portions is irradiated to the photoelectric conversion layer without passing through a vacuum space.

10‧‧‧載台室 10‧‧‧station room

54‧‧‧光電元件 54‧‧‧Optoelectronic components

56‧‧‧板構件 56‧‧‧Board components

58‧‧‧遮光膜 58‧‧‧Shade film

58a‧‧‧孔徑 58a‧‧‧Aperture

58b‧‧‧孔徑 58b‧‧‧Aperture

60‧‧‧光電層 60‧‧‧Photoelectric layer

70‧‧‧電子束光學系統 70‧‧‧Electron beam optical system

80‧‧‧光束照射裝置 80‧‧‧beam irradiation device

82‧‧‧真空間隔壁 82‧‧‧vacuum partition

84‧‧‧發光元件(自發光型對比元件陣列) 84‧‧‧Light-emitting elements (self-illuminating contrast element array)

84a‧‧‧發光部(微型LED) 84a‧‧‧Lighting section (micro LED)

84b‧‧‧CMOS驅動電路 84b‧‧‧CMOS driver circuit

85‧‧‧配線 85‧‧‧ wiring

100‧‧‧曝光裝置 100‧‧‧Exposure device

110‧‧‧主控制裝置 110‧‧‧Main control unit

112‧‧‧引出電極 112‧‧‧Extraction electrode

134‧‧‧基材 134‧‧‧Substrate

136‧‧‧光電元件 136‧‧‧Optoelectronic components

140‧‧‧光電元件 140‧‧‧Optoelectronic components

142‧‧‧孔徑構件 142‧‧‧Aperture member

144‧‧‧基材 144‧‧‧Substrate

184‧‧‧自發光型對比元件陣列(發光元件) 184‧‧‧ Self-illuminating contrast element array (light-emitting element)

284a‧‧‧光子結晶雷射 284a‧‧‧Photon Crystallized Laser

EB‧‧‧電子束 EB‧‧‧electron beam

LB‧‧‧雷射束 LB‧‧‧Laser beam

W‧‧‧晶圓 W‧‧‧ wafer

WST‧‧‧晶圓載台 WST‧‧‧ Wafer Stage

圖1係概略顯示第1實施形態之曝光裝置之構成的圖。 Fig. 1 is a view schematically showing the configuration of an exposure apparatus according to a first embodiment.

圖2係取出圖1之曝光裝置具備之複數個光電光學單元之1個並與晶圓之一部分加以顯示的圖。 Fig. 2 is a view showing one of a plurality of photoelectron units provided in the exposure apparatus of Fig. 1 and displayed on one of the wafers.

圖3(A)係簡化光束照射裝置之構成並省略部分的縱剖面圖、圖3(B)係圖3(A)所示之光束照射裝置之仰視圖。 Fig. 3(A) is a vertical cross-sectional view showing a configuration of a simplified beam irradiation device, and a part of the beam irradiation device shown in Fig. 3(A) is omitted.

圖4係用以說明藉由第1靜電透鏡進行於X軸方向及Y軸方向之縮小倍率之修正的圖。 FIG. 4 is a view for explaining correction of the reduction magnification in the X-axis direction and the Y-axis direction by the first electrostatic lens.

圖5係顯示在光電元件之受光面上之雷射束之照射區域、與在像面(晶圓面)上之電子束之照射區域(曝光區域)之對應關係的圖。 Fig. 5 is a view showing a correspondence relationship between an irradiation region of a laser beam on a light receiving surface of a photovoltaic element and an irradiation region (exposure region) of an electron beam on an image surface (wafer surface).

圖6係顯示以曝光裝置之控制系統為主構成之主控制裝置之輸出入關係的方塊圖。 Fig. 6 is a block diagram showing the input/output relationship of the main control device mainly composed of the control system of the exposure device.

圖7係用以說明與正方形場相較之矩形場之優點的圖。 Figure 7 is a diagram for explaining the advantages of a rectangular field compared to a square field.

圖8(A)及圖8(B)係用以說明因光學系統引起之模糊及抗蝕劑模糊而產生之切割圖案之形狀變化(4角之圓弧)之修正的圖。 8(A) and 8(B) are diagrams for explaining the correction of the shape change (the arc of four corners) of the cut pattern caused by the blur caused by the optical system and the blur of the resist.

圖9(A)及圖9(B)係用以說明複數條電子束光學系統共通之畸變之修正的圖。 9(A) and 9(B) are diagrams for explaining correction of distortion common to a plurality of electron beam optical systems.

圖10係用以說明包含發光元件、與發光元件不同之光電元件之分離型光束照射裝置之一構成例的圖。 Fig. 10 is a view for explaining an example of a configuration of a separate beam irradiation device including a light-emitting element and a photovoltaic element different from the light-emitting element.

圖11係將構成第1實施形態之變形例1之曝光裝置所具備之光學系統之45個光電光學單元中之1個加以取出顯示的圖。 FIG. 11 is a view showing one of 45 photoelectron units constituting the optical system included in the exposure apparatus according to the first modification of the first embodiment.

圖12係用以說明於遮光膜形成有較主孔徑列行程有更多數之備用孔徑列之一光電元件例的圖。 Fig. 12 is a view for explaining an example of a photovoltaic element in which a light-shielding film is formed with a larger number of spare aperture columns than a main aperture column stroke.

圖13係用以說明補償電子束光學系統作為像差所具有之像面彎曲之方法的圖。 Figure 13 is a diagram for explaining a method of compensating an electron beam optical system as a field curvature of an aberration Figure.

圖14係顯示每隔1列形成有節距相異之孔徑列之多節距型孔徑一體型光電元件之一例的圖。 Fig. 14 is a view showing an example of a multi-pitch type aperture-integrated photovoltaic element in which an aperture row having a different pitch is formed in one column.

圖15係將構成第1實施形態之變形例2之曝光裝置所具備之光學系統之45個光電光學單元中之1個加以取出顯示的圖。 FIG. 15 is a view showing one of 45 photoelectron units constituting the optical system included in the exposure apparatus according to the second modification of the first embodiment.

圖16係將構成第1實施形態之變形例3之曝光裝置所具備之光學系統之45個光電光學單元中之1個加以取出顯示的圖。 FIG. 16 is a view showing one of 45 photoelectric optical units constituting the optical system included in the exposure apparatus according to the third modification of the first embodiment.

圖17(A)係顯示不使用孔徑之方式的說明圖、圖17(B)係顯示使用孔徑之方式的說明圖。 Fig. 17(A) is an explanatory view showing a mode in which no aperture is used, and Fig. 17(B) is an explanatory view showing a mode in which an aperture is used.

圖18(A)係用以說明孔徑不同體型光電元件之一構成例的圖、圖18(B)~圖18(E)係顯示孔徑板之各種構成例的圖。 18(A) is a view for explaining a configuration example of one of the aperture-shaped different-type photovoltaic elements, and FIGS. 18(B) to 18(E) are diagrams showing various configuration examples of the aperture plate.

圖19(A)~圖19(D)係顯示孔徑一體型光電元件之各種構成例的圖。 19(A) to 19(D) are views showing various configuration examples of the aperture-integrated photoelectric element.

圖20係將構成第1實施形態之變形例4之曝光裝置所具備之光學系統之45個光電光學單元中之1個加以取出顯示的圖。 FIG. 20 is a view showing one of 45 photoelectron units constituting the optical system included in the exposure apparatus according to the fourth modification of the first embodiment.

圖21係用以說明構成變形例4之光電光學單元之一部分之光束照射裝置之構成的圖。 Fig. 21 is a view for explaining the configuration of a light beam irradiation device which constitutes a part of the photoelectric optical unit of Modification 4.

圖22係用以說明元件製造方法之一實施形態的圖。 Fig. 22 is a view for explaining an embodiment of a method of manufacturing a component.

《第1實施形態》 "First Embodiment"

以下，根據圖1~圖9說明第1實施形態。圖1中概略顯示了第1實施形態之曝光裝置100之構成。曝光裝置100，如後述般具備複數個電子束光學系統，以下，以和電子束光學系統之光軸平行的取Z軸、以在與Z軸垂直之平面內於後述曝光時晶圓W移動之掃描方向為Y軸方向、以和Z軸及Y軸正交之方向為X軸方向，以繞X軸、Y軸及Z軸之旋轉(傾斜)方向分別為θx、θy及θz方向，進行說明。 Hereinafter, a first embodiment will be described with reference to Figs. 1 to 9 . Fig. 1 schematically shows the configuration of an exposure apparatus 100 according to the first embodiment. The exposure apparatus 100 includes a plurality of electron beam optical systems as will be described later. Hereinafter, the Z axis is parallel to the optical axis of the electron beam optical system, and the wafer W is moved during exposure in a plane perpendicular to the Z axis. The scanning direction is the Y-axis direction, the direction orthogonal to the Z-axis and the Y-axis is the X-axis direction, and the directions of rotation (tilting) around the X-axis, the Y-axis, and the Z-axis are θx, θy, and θz directions, respectively. Bright.

曝光裝置100，具備設置在無塵室地面F上的載台室10、配置在載台室10內部之曝光室12內的載台系統14、以及被支承於框架16且配置在載台系統14上方的光學系統18。 The exposure apparatus 100 includes a stage chamber 10 provided on the clean room floor F, a stage system 14 disposed in the exposure chamber 12 inside the stage chamber 10, and a frame system 16 supported by the frame 16 and disposed in the stage system 14 Upper optical system 18.

載台室10，於圖1中雖省略了X軸方向兩端部之圖示，但其係可將其內部抽為真空之真空室。載台室10，具備配置在地面F上與XY平面平行的底壁10a、兼作為載台室10之上壁(頂壁)的前述框架16、以及圍繞底壁10a之周圍並將框架16從下方支承為水平的周壁10b(圖1中，僅顯示其中之+Y側部分之一部分)。於框架16形成有開口16a。於開口16a內配置有光學系統18之箱體19。箱體19，於上端部設有較其他部分突出於外側之凸緣部19c。於開口16a內從上方***之箱體19之凸緣部19c，從下方被支承於開口16a周圍之框架16之上面。據此，光學系統18被框架16支承。開口16a之內周面與箱體19之外周面之間，可藉由密封構件加以密封。載台室10之底壁10a上配置有載台系統14。 Although the stage chamber 10 is not shown in the X-axis direction in FIG. 1, it is a vacuum chamber in which the inside of the stage chamber 10 is evacuated. The stage chamber 10 includes a bottom wall 10a disposed on the floor surface F in parallel with the XY plane, the frame 16 which also serves as the upper wall (top wall) of the stage chamber 10, and the periphery around the bottom wall 10a and the frame 16 is The lower support is a horizontal peripheral wall 10b (in Fig. 1, only one of the +Y side portions is shown). An opening 16a is formed in the frame 16. A casing 19 of the optical system 18 is disposed in the opening 16a. The casing 19 is provided with a flange portion 19c that protrudes from the other portion at the upper end portion. The flange portion 19c of the casing 19 inserted from above in the opening 16a is supported from the lower surface of the frame 16 around the opening 16a. Accordingly, the optical system 18 is supported by the frame 16. The inner circumferential surface of the opening 16a and the outer circumferential surface of the casing 19 can be sealed by a sealing member. A stage system 14 is disposed on the bottom wall 10a of the stage chamber 10.

載台系統14，具備於底壁10a上透過複數個防振構件20被支承的平台22、於平台22上被重量抵消裝置24支承而能於X軸方向及Y軸方向分別以既定行程、例如50mm移動且能於其餘4自由度方向(Z軸、θx、θy及θz方向)微動的晶圓載台WST、驅動晶圓載台WST的載台驅動系統統26(圖1中僅顯示其中之一部分，參照圖6)、以及測量晶圓載台WST之6自由度方向之位置資訊的位置測量系統28(圖1中未圖示，參照圖6)。晶圓載台WST，係透過設置在其上面之未圖示之靜電夾頭吸附、保持晶圓W。 The stage system 14 includes a stage 22 that is supported by the plurality of vibration-proof members 20 on the bottom wall 10a, and is supported by the weight canceling device 24 on the stage 22 so as to be capable of a predetermined stroke in the X-axis direction and the Y-axis direction, for example. a wafer stage WST that moves 50 mm and can be jogged in the remaining four degrees of freedom directions (Z axis, θx, θy, and θz directions), and a stage driving system 26 that drives the wafer stage WST (only one of which is shown in FIG. 1 Referring to Fig. 6) and a position measuring system 28 (not shown in Fig. 1, see Fig. 6) for measuring position information in the six-degree-of-freedom direction of the wafer stage WST. The wafer stage WST adsorbs and holds the wafer W through an electrostatic chuck (not shown) provided thereon.

晶圓載台WST，如圖1所示，具有XZ剖面框狀之構件，於其內部(中空部)一體的固定有軛部與磁石(未圖示)之馬達30的可動子30a，於該可動子30a之內部(中空部)***由延伸於Y軸方向之線圈單元構成之馬達30的固定子30b。固定子30b，其長邊方向(Y軸方向)之兩端連接於在平台22上移動於X軸方向之未圖示的X載台。X載台，被不會產生磁漏之單軸驅動機構、例如使用滾珠螺桿之進給螺桿機構構成之X載台驅動系統32(參照圖6)，與晶圓載台WST一體於X軸方向以既定行程移動。又，亦可將X載台驅動系統32以具備超音波馬達作為驅動源之單軸驅動機構構成。無論何者，起因於磁漏之磁場變動對電子束之定位造成之影響是可忽視之程度。 As shown in FIG. 1, the wafer stage WST has a frame having a frame shape of XZ, and a movable portion 30a of a motor 30 of a yoke and a magnet (not shown) is integrally fixed to the inside (hollow portion). The inside (hollow portion) of the sub- 30a is inserted into the stator 30b of the motor 30 constituted by the coil unit extending in the Y-axis direction. The stator 30b is connected to the platform 22 at both ends of the longitudinal direction (Y-axis direction) An X stage (not shown) that moves in the X-axis direction. The X stage is a single stage drive mechanism that does not generate a magnetic leakage, for example, an X stage drive system 32 (see FIG. 6) that uses a feed screw mechanism of a ball screw, and is integrated with the wafer stage WST in the X-axis direction. The scheduled trip moves. Further, the X stage drive system 32 may be configured as a single-axis drive mechanism including an ultrasonic motor as a drive source. Either way, the influence of the magnetic field fluctuation caused by the magnetic leakage on the positioning of the electron beam is negligible.

馬達30，係可相對固定子30b使可動子30a於Y軸方向以既定行程、例如以50mm移動，並能於X軸方向、Z軸方向、θx方向、θy方向及θz方向微幅驅動之閉磁場型且動磁型的馬達。於本實施形態，以馬達30構成將晶圓載台WST驅動於6自由度方向之晶圓載台驅動系統。以下，將晶圓載台驅動系統與馬達30使用同一符號，稱之為晶圓載台驅動系統30。 The motor 30 is capable of moving the movable member 30a in the Y-axis direction with a predetermined stroke, for example, at 50 mm, with respect to the stator 30b, and is capable of being slightly driven in the X-axis direction, the Z-axis direction, the θx direction, the θy direction, and the θz direction. Magnetic field type and moving magnetic type motor. In the present embodiment, the motor 30 constitutes a wafer stage drive system that drives the wafer stage WST in a six-degree-of-freedom direction. Hereinafter, the wafer stage drive system and the motor 30 are denoted by the same reference numerals and are referred to as a wafer stage drive system 30.

由X載台驅動系統32與晶圓載台驅動系統30，構成將晶圓載台WST分別以既定行程、例如50mm驅動於X軸方向及Y軸方向，並微幅驅動於其餘4自由度方向(Z軸、θx、θy及θz方向)的前述載台驅動系統26。X載台驅動系統32及晶圓載台驅動系統30，係由主控制裝置110加以控制(參照圖6)。 The X stage driving system 32 and the wafer stage driving system 30 are configured to drive the wafer stage WST in the X-axis direction and the Y-axis direction with a predetermined stroke, for example, 50 mm, and drive the micro-frame in the remaining 4 degrees of freedom (Z). The stage drive system 26 of the axis, θx, θy, and θz directions). The X stage drive system 32 and the wafer stage drive system 30 are controlled by the main control unit 110 (see Fig. 6).

重量抵消裝置24，具有上端連接在晶圓載台WST下面之金屬製伸縮盒型空氣彈簧(以下，簡稱空氣彈簧)24a、與連接在空氣彈簧24a下端由平板狀板構件構成之底板滑件24b。於底板滑件24b，設有將空氣彈簧24a內部之空氣噴出至平台22上面之軸承部(未圖示)，藉由從軸承部噴出之加壓空氣之軸承面與平台22上面之間之靜壓(間隙內壓力)，支承重量抵消裝置24、晶圓載台WST(含可動子30a)及晶圓W之自重。此外，對空氣彈簧24a，透過連接在晶圓載台WST之未圖示之配管供應壓縮空氣。底板滑件24b，透過一種差動排氣型之空氣靜壓軸承以非接觸方式被支承在平台22上，防止從軸承部噴出向平台22之空氣漏出至周圍(曝光室內)。又，實際上，於晶圓載台WST之底面，於Y軸方向隔著空氣彈簧24a設有一對支柱，設在支柱下端之板彈簧連接於空氣彈簧24a。 The weight canceling device 24 has a metal bellows type air spring (hereinafter, abbreviated as an air spring) 24a whose upper end is connected to the lower surface of the wafer stage WST, and a bottom plate slider 24b which is connected to the lower end of the air spring 24a by a flat plate member. The bottom plate slider 24b is provided with a bearing portion (not shown) for ejecting air inside the air spring 24a onto the upper surface of the platform 22, and the static bearing surface between the pressurized air and the upper surface of the platform 22 is ejected from the bearing portion. The pressure (pressure in the gap) supports the weight canceling device 24, the wafer stage WST (including the movable member 30a), and the weight of the wafer W. Further, the air spring 24a is supplied with compressed air through a pipe (not shown) connected to the wafer stage WST. The bottom plate slider 24b is supported on the stage 22 in a non-contact manner by a differential exhaust type aerostatic bearing to prevent air blown from the bearing portion to the stage 22 from leaking to the surroundings (exposure chamber). Further, actually, a pair of pillars are provided on the bottom surface of the wafer stage WST via the air spring 24a in the Y-axis direction, and a leaf spring provided at the lower end of the pillar is connected to Air spring 24a.

光學系統18，如圖1所示，具備箱體19、與安裝在箱體19之複數個、例如45個光電光學單元17。 As shown in FIG. 1, the optical system 18 includes a casing 19 and a plurality of, for example, 45 photoelectric optical units 17 mounted on the casing 19.

於箱體19內部，例如圖1所示，形成有真空室33。真空室33，如圖1所示，被構成上壁(頂壁)之底板38、構成底壁之冷卻板74、以及冷卻板74固定在其下端之筒狀周壁部76區劃。因周壁部76之上端被固定在底板38之下面，構成箱體19。本實施型態之冷卻板74，雖具備冷卻功能，但除冷卻功能外亦可具備後述抑制成霧(fogging)的功能。此外，冷卻板74亦可不具備冷卻功能。 Inside the casing 19, for example, as shown in Fig. 1, a vacuum chamber 33 is formed. As shown in Fig. 1, the vacuum chamber 33 is partitioned by a bottom plate 38 constituting an upper wall (top wall), a cooling plate 74 constituting a bottom wall, and a cylindrical peripheral wall portion 76 to which a cooling plate 74 is fixed at a lower end thereof. Since the upper end of the peripheral wall portion 76 is fixed to the lower surface of the bottom plate 38, the casing 19 is formed. The cooling plate 74 of the present embodiment has a cooling function, but may have a function of suppressing fogging, which will be described later, in addition to the cooling function. Further, the cooling plate 74 may not have a cooling function.

於底板38，延伸於Z軸方向之貫通孔38a，於XY2維方向以既定間隔形成有複數，此處，例如以扣除7行7列之矩陣之4角的配置，形成有45(=7×7-4)個。於此等45個貫通孔38a之各個中，以幾乎無間隙之狀態配置有後述光束照射裝置80。亦可在光束照射裝置80與貫通孔38a之間配置密封構件。又，亦可不在底板38設置貫通孔，而在底板38下面設置光束照射裝置80。 In the bottom plate 38, the through holes 38a extending in the Z-axis direction are formed at a predetermined interval in the XY two-dimensional direction. Here, for example, 45 (=7×) is formed by delimiting four corners of a matrix of seven rows and seven columns. 7-4). In each of the 45 through holes 38a, the beam irradiation device 80 to be described later is disposed in a state where there is almost no gap. A sealing member may be disposed between the beam irradiation device 80 and the through hole 38a. Further, the through hole may not be provided in the bottom plate 38, and the light beam irradiation device 80 may be disposed under the bottom plate 38.

圖2中，與晶圓W之一部分一起顯示了1個光電光學單元17。圖2顯示從+X方向所見之光電光學單元17。光電光學單元17，如圖2所示，具備安裝在底板38之光束照射裝置80、與電子束光學系統70。 In Fig. 2, one optoelectronic unit 17 is shown together with a portion of the wafer W. Figure 2 shows the optoelectronic unit 17 seen from the +X direction. As shown in FIG. 2, the optoelectronic unit 17 includes a light beam irradiation device 80 attached to the bottom plate 38 and an electron beam optical system 70.

圖3(A)中簡化顯示了光束照射裝置80之構成。光束照射裝置80，係將產生光之發光元件84與光電元件54加以一體化者。光束照射裝置，如後述第1至第3變形例所示，由於亦存在包含發光元件、與和發光元件分離之光電元件的型式，因此如光束照射裝置80般，可將發光元件84與光電元件54一體型式之光束照射裝置，廣義上稱為光電元件。於本實施形態，作為發光元件84，係使用以自發光型對比元件陣列為主體之發光元件，因此，以下，使用與發光元件84相同符號，亦稱之為自發光型對比元件陣列84。 The configuration of the beam irradiation device 80 is simplified in Fig. 3(A). The light beam irradiation device 80 integrates the light-emitting element 84 that generates light with the photovoltaic element 54. In the light beam irradiation device, as shown in the first to third modifications described later, since the light-emitting element and the photoelectric element separated from the light-emitting element are also present, the light-emitting element 84 and the photovoltaic element can be used as the light beam irradiation device 80. The 54-integrated beam irradiation device is broadly referred to as a photovoltaic element. In the present embodiment, as the light-emitting element 84, a light-emitting element mainly composed of a self-luminous type contrast element array is used. Therefore, the same reference numerals as those of the light-emitting element 84 are used hereinafter, which are also referred to as a self-luminous type contrast element array 84.

發光元件84、亦即自發光型對比元件陣列84，組裝在半導體基板上，配置成1維陣列狀或2維陣列狀，係具有可個別控制之複數個發光部的可程式圖案化元件。自發光型對比元件陣列84，例如在基板上積層複數個化合物半導體構成材料層而形成後，藉由濕式蝕刻選擇性的除去各化合物半導體構成材料層，將各發光元件(發光部)之半導體層成形為平台式結構、或將發光元件間加以元件分離等之方法來製造。於本實施形態，作為發光元件84，具有例如由雙異質接合(構造)形成之半導體之pn接合，具有在半導體基板上配置成XY2維陣列狀之複數個發光部84a、與個別驅動複數個發光部84a之複數個CMOS驅動電路84b。此處，於發光元件84，作為複數個發光部84a之各個，係使用自發光型對比元件之一種的微型LED，因此，以下係與發光部使用相同符號，稱之為微型LED84a。又，於圖3(A)中，係將CMOS驅動電路84b簡化而僅顯示成電晶體。圖3(A)中，符號85係簡化顯示連接於複數個CMOS驅動電路84b之配線。此外，亦可將預先製造之複數個微型LED排列配置在基板上，作為發光元件84使用。 The light-emitting elements 84, that is, the self-luminous type contrast element arrays 84 are assembled on a semiconductor substrate and arranged in a one-dimensional array or a two-dimensional array, and are programmable pattern elements having a plurality of light-emitting portions that can be individually controlled. The self-luminous type contrast element array 84 is formed by, for example, laminating a plurality of compound semiconductor constituent material layers on a substrate, and then selectively removing each compound semiconductor constituent material layer by wet etching to form a semiconductor of each light-emitting element (light-emitting portion). The layer is formed into a flat structure or a method of separating elements between light-emitting elements. In the present embodiment, the light-emitting element 84 has, for example, a pn junction of a semiconductor formed by a double heterojunction (structure), and has a plurality of light-emitting portions 84a arranged in an XY two-dimensional array on the semiconductor substrate, and individually driving a plurality of light-emitting portions. A plurality of CMOS drive circuits 84b of the portion 84a. Here, in the light-emitting element 84, since each of the plurality of light-emitting portions 84a is a micro-LED which is one of the self-luminous type contrast elements, the same reference numerals are used for the light-emitting portion, and the micro LEDs 84a are referred to. Further, in Fig. 3(A), the CMOS drive circuit 84b is simplified and shown only as a transistor. In Fig. 3(A), reference numeral 85 simplifies the display of wiring connected to a plurality of CMOS drive circuits 84b. Further, a plurality of pre-manufactured plural micro LEDs may be arranged on the substrate and used as the light-emitting element 84.

發光元件84，可藉由對各個之施加電壓以個別控制來自複數個微型LED84a各個之光束LB之強度，強度控制包含使強度為零，亦即停止光束LB之發光之停止。發光元件84，亦可稱之為產生例如由明暗圖案構成之光學圖案。 The light-emitting element 84 can individually control the intensity of the light beam LB from each of the plurality of micro-LEDs 84a by applying a voltage to each of them, and the intensity control includes zeroing the intensity, that is, stopping the light emission of the light beam LB. The light-emitting element 84 may also be referred to as an optical pattern that is formed, for example, of a light-dark pattern.

光電元件54，包含：配置在發光元件84之複數個微型LED84a之射出面側且可使從微型LED84a發出之複數條光束LB不透過空間而能穿透之板狀光穿透構件、例如由石英玻璃構成的板構件56、於該板構件56下面以例如蒸鍍之鉻等構成的遮光膜(孔徑膜)58、以及成膜在板構件56及遮光膜58下面側的鹼光電膜(光電轉換膜)之層(鹼光電轉換層(鹼光電層))60。又，板構件56之材料不限於石英玻璃，只要是對例如由藍寶石等之微型LED84a所發出之光(beam)之波長具有穿透性之材料即可。 The photovoltaic element 54 includes a plate-shaped light penetrating member that is disposed on the emitting surface side of the plurality of micro LEDs 84a of the light emitting element 84 and that can pass through the plurality of light beams LB emitted from the micro LEDs 84a without passing through the space, for example, quartz. A plate member 56 made of glass, a light-shielding film (aperture film) 58 made of, for example, vapor-deposited chromium under the plate member 56, and an alkali photoelectric film (photoelectric conversion) formed on the lower surface side of the plate member 56 and the light-shielding film 58 A layer of a film (alkali photoelectric conversion layer (alkali photoelectric layer)) 60. Further, the material of the plate member 56 is not limited to quartz glass as long as it is issued to the micro LED 84a such as sapphire or the like. The wavelength of the beam may be a material having a penetrating property.

圖3(A)中雖僅顯示了光束照射裝置80之一部分，但實際上，於遮光膜58以既定之位置關係形成有多數個孔徑58a(參照圖3(B))。鹼光電層60亦配置在孔徑58a之內部，於孔徑58a中板構件56與鹼光電層60接觸。於本實施形態，板構件56、遮光膜58及鹼光電層60形成為一體，形成光電元件54之至少一部分。 Although only one part of the light beam irradiation device 80 is shown in Fig. 3(A), actually, a plurality of apertures 58a are formed in the light shielding film 58 in a predetermined positional relationship (see Fig. 3(B)). The alkali photo-electric layer 60 is also disposed inside the aperture 58a, and the plate member 56 is in contact with the alkali photo-electric layer 60 in the aperture 58a. In the present embodiment, the plate member 56, the light shielding film 58, and the alkali photoelectric layer 60 are integrally formed to form at least a part of the photovoltaic element 54.

本實施形態中，進一步的，發光元件84之複數個發光部微型LED84a與複數個CMOS驅動電路84b，藉由半導體製程與光電元件54形成為一體。CMOS驅動電路84b係做在矽基板上，微型LED具有例如氮化鎵(GaN)之PN接合構造。又，亦可將發光元件84與光電元件54分開形成後，將發光元件84與光電元件54加以接合。此場合，亦可在發光元件84與光電元件54之間，配置可使來自發光元件84之光束穿透之構件或膜。 In the present embodiment, a plurality of light-emitting portion micro LEDs 84a and a plurality of CMOS drive circuits 84b of the light-emitting element 84 are integrally formed with the photovoltaic element 54 by a semiconductor process. The CMOS driving circuit 84b is formed on a germanium substrate having a PN junction structure such as gallium nitride (GaN). Further, after the light-emitting element 84 is formed separately from the photovoltaic element 54, the light-emitting element 84 and the photovoltaic element 54 may be joined. In this case, a member or film that can penetrate the light beam from the light-emitting element 84 may be disposed between the light-emitting element 84 and the photovoltaic element 54.

於本實施形態，複數個微型LED84a與孔徑58a，係設為1對1對應。亦即，在板構件56之一面(光射出面)上之孔徑58a之配置、與板構件56之另一面(光射入面)上之微型LED84a之配置係對應。 In the present embodiment, the plurality of micro LEDs 84a and the aperture 58a are provided in a one-to-one correspondence. That is, the arrangement of the apertures 58a on one surface (light exit surface) of the plate member 56 corresponds to the arrangement of the micro LEDs 84a on the other surface (light incident surface) of the plate member 56.

作為發光部，不限於微型LED，亦可使用其他之放射二極體、例如發光二極體、有機LED、高分子LED、雷射二極體等。又，作為發光部，不限於放射二極體，亦可使用垂直共振腔面射型雷射(VCSEL)或垂直外部共振腔面射型雷射(VECSEL)等其他自發光型對比元件。此等發光部，由於係相對半導體基板之垂直方向、亦即相對板構件56之面之垂直方向射出光束，因此做為圖3(A)之發光部(自發光型對比元件)84a，可取代微型LED使用此等發光部。 The light-emitting portion is not limited to a micro LED, and other radiation diodes such as a light-emitting diode, an organic LED, a polymer LED, a laser diode, or the like may be used. Further, the light-emitting portion is not limited to a radiation diode, and other self-luminous type contrast elements such as a vertical cavity surface-emitting laser (VCSEL) or a vertical external cavity surface-emitting laser (VECSEL) may be used. Since the light-emitting portions emit light beams in a direction perpendicular to the vertical direction of the semiconductor substrate, that is, in a direction perpendicular to the surface of the plate member 56, the light-emitting portion (self-luminous type contrast element) 84a of Fig. 3(A) can be replaced. Micro LEDs use these light emitting sections.

鹼光電層60，係使用2種類以上之鹼金屬的多鹼光電陰極。多鹼光電陰極，係耐久性高、波長在500nm區域之綠色光且能產生電子，光電效果之量子效率QE高達10%程度為特長之光電陰極。於本實施形態，鹼光電層60係用作為藉由以雷射光(亦稱雷射束或光束)之光電效果生成電子束的一種電子鎗，因此使用轉換效率為10[mA/W]之高效率者。又，於光電元件54，鹼光電層60之電子放射面，係圖3(A)中之下面、亦即係與板構件56對向側之面相反側之面。 The alkali photoelectrode layer 60 is a polybasic photocathode using two or more kinds of alkali metals. Multi-alkali photocathode, which is green light with high durability and wavelength in the region of 500 nm and can generate electrons, photoelectric effect The quantum efficiency QE is up to 10% to the extent of a photocathode. In the present embodiment, the alkali photoelectric layer 60 is used as an electron gun for generating an electron beam by a photoelectric effect of laser light (also referred to as a laser beam or a light beam), so that a conversion efficiency of 10 [mA/W] is used. By. Further, in the photovoltaic element 54, the electron emission surface of the alkali photoelectric layer 60 is the lower side in Fig. 3(A), that is, the surface opposite to the surface on the opposite side of the plate member 56.

從複數個微型LED84a之各個，可將具有較對應之孔徑58a大一圈之剖面的光束LB(以下，適當的稱光束LB)，透過板構件56照射於對應之孔徑58a。光束LB，透過孔徑58a照射於鹼光電層(以下，簡稱為光電層)60，藉由光電轉換，具有與孔徑58a之形狀對應之剖面的電子束EB從光電層60往-Z方向射出。於本實施形態，光電元件54係配置在發光元件陣列84之複數個微型LED84a之射出面側、且孔徑58a內部亦有配置光電層60，因此從複數個微型LED84a之各個，可將光束LB不透過氣體空間(氣體存在之空間)、及真空空間而透過對應之孔徑58a照射於光電層60。又，本實施形態之光電元件54，可將來自複數個微型LED84a各個之光束LB，不透過真空空間而透過對應之孔徑58a照射於光電層60。但不限於此，亦可在複數個微型LED84a之各個與光電層60之間，形成光束LB可通過之空間(氣體空間與真空空間中之任一方或兩方)。 Each of the plurality of micro LEDs 84a can emit a light beam LB having a cross section larger than the corresponding aperture 58a (hereinafter, a suitable light beam LB) through the plate member 56 to the corresponding aperture 58a. The light beam LB is irradiated to the alkali photoelectric layer (hereinafter simply referred to as the photovoltaic layer) 60 through the aperture 58a, and the electron beam EB having a cross section corresponding to the shape of the aperture 58a is emitted from the photovoltaic layer 60 in the -Z direction by photoelectric conversion. In the present embodiment, the photovoltaic element 54 is disposed on the emission surface side of the plurality of micro LEDs 84a of the light-emitting element array 84, and the photovoltaic layer 60 is disposed inside the aperture 58a. Therefore, the light beam LB can be removed from each of the plurality of micro LEDs 84a. The photovoltaic layer 60 is irradiated through the corresponding aperture 58a through a gas space (a space in which gas exists) and a vacuum space. Further, in the photovoltaic device 54 of the present embodiment, the light beams LB from the plurality of micro LEDs 84a can be irradiated to the photovoltaic layer 60 through the corresponding apertures 58a without passing through the vacuum space. However, the present invention is not limited thereto, and a space through which the light beam LB can pass (either one or both of the gas space and the vacuum space) may be formed between each of the plurality of micro LEDs 84a and the photovoltaic layer 60.

本實施形態，係藉由使來自發光元件84之光束照射於光電元件54，通過複數個、此處係例如6000×12=72000個孔徑58a中之至少1個之光束照射於光電層60。亦即，來自on之微型LED84a之光束透過對應之孔徑58a照射於光電層60，而從off之微型LED84a則無光束照射於對應之孔徑58a及光電層60。 In the present embodiment, a light beam from the light-emitting element 84 is applied to the photovoltaic element 54, and a plurality of light beams of at least one of, for example, 6000 × 12 = 72,000 apertures 58a are irradiated onto the photovoltaic layer 60. That is, the light beam from the on-chip micro LED 84a is incident on the photovoltaic layer 60 through the corresponding aperture 58a, and the off-micro LED 84a is not irradiated onto the corresponding aperture 58a and the photovoltaic layer 60.

於發光元件84，由於各微型LED84a可獨立控制，因此於發光元件84產生之光束數量為例如6000×12=72000條，72000條光束可切換(on/off)。於本實施形態，為使於發光元件84產生之72000條光束可個別的照射，於光電元件54之遮光膜58形成有72000個孔徑58a。又，孔徑58a之數量，亦可例如不與發光元件84可照射之光束數量相同，只要72000條光束(雷射束)之各個能照射到包含對應之孔徑58a之光電元件54(遮光膜58)上之區域即可。亦即，光電元件54上複數個孔徑58a各個之尺寸只要是較對應之光束之剖面尺寸小即可。於本實施形態，72000條光束係照射在光電元件54之受光面(形成有多數個孔徑58a之面)上，X軸方向長度為Smm、Y軸方向長度為Tmm之矩形區域。此外，亦可是以1條光束(例如，來自1個微型LED之光束)照射於複數個孔徑。此場合，射入光電層60之光束之切換係就每複數個孔徑進行。又，孔徑58a之數量可與後述多電子束之數量相同、亦可較多電子束之數量多。 In the light-emitting element 84, since each of the micro-LEDs 84a can be independently controlled, the number of light beams generated by the light-emitting elements 84 is, for example, 6000 × 12 = 72,000, and 72,000 light beams can be switched on/off. In this embodiment, in order to allow 72,000 beams generated by the light-emitting element 84 to be individually irradiated, The light shielding film 58 of the photovoltaic element 54 is formed with 72000 apertures 58a. Further, the number of apertures 58a may be, for example, not the same as the number of beams that can be illuminated by the light-emitting element 84, as long as each of the 72,000 beams (laser beams) can illuminate the photo-electric element 54 (light-shielding film 58) including the corresponding aperture 58a. The area above can be. That is, the size of each of the plurality of apertures 58a on the photo-electric element 54 may be smaller than the cross-sectional size of the corresponding beam. In the present embodiment, 72,000 beams are irradiated onto the light receiving surface of the photovoltaic element 54 (the surface on which the plurality of apertures 58a are formed), and the length in the X-axis direction is Smm, and the length in the Y-axis direction is Tmm. Alternatively, a plurality of light beams (for example, a light beam from one micro LED) may be irradiated to the plurality of apertures. In this case, the switching of the light beam incident on the photovoltaic layer 60 is performed for every plurality of apertures. Further, the number of the apertures 58a may be the same as the number of the multi-electron beams described later, and the number of the plurality of electron beams may be large.

電子束光學系統70，如圖2所示，具有：其上端連接在底板38下面之鏡筒104、由保持於鏡筒104之一對電磁透鏡70a、70b構成之物鏡、以及靜電多極70c。電子束光學系統70之物鏡與靜電多極70c，係配置在將複數個光束LB照射於光電元件54而藉由光電轉換從光電層60放射(射出)之電子(電子束EB)之射束路上。一對電磁透鏡70a、70b分別配置在鏡筒104內之高度方向大致中央及下端部近旁，於上下方向兩者分離。於鏡筒104內之電磁透鏡70a上方之位置，配置有有用以使從光電層60放射之電子加速的引出電極112。又，亦可將電磁透鏡70a、70b配置在鏡筒104外。 As shown in FIG. 2, the electron beam optical system 70 has a lens barrel 104 whose upper end is connected to the lower surface of the bottom plate 38, an objective lens which is held by one of the lens barrels 104 for the electromagnetic lenses 70a and 70b, and an electrostatic multipole 70c. The objective lens and the electrostatic multipole 70c of the electron beam optical system 70 are disposed on a beam path of electrons (electron beams EB) radiated (ejected) from the photovoltaic layer 60 by photoelectric conversion of a plurality of light beams LB to the photovoltaic element 54 by photoelectric conversion. . Each of the pair of electromagnetic lenses 70a and 70b is disposed substantially in the center in the height direction of the lens barrel 104 and in the vicinity of the lower end portion, and is separated in the vertical direction. An extraction electrode 112 for accelerating electrons radiated from the photovoltaic layer 60 is disposed at a position above the electromagnetic lens 70a in the lens barrel 104. Further, the electromagnetic lenses 70a and 70b may be disposed outside the lens barrel 104.

在一對電磁透鏡70a、70b彼此之間配置有靜電多極70c。靜電多極70c係配置在被物鏡收束之電子束(以下，適當的簡稱為射束)EB之射束路上之射束腰部近旁。因此，會有通過靜電多極70c之複數個射束EB受作用於彼此間之庫侖力而互斥，使電子束光學系統之倍率變化之情形。 The electrostatic multipole 70c is disposed between the pair of electromagnetic lenses 70a and 70b. The electrostatic multipole 70c is disposed in the vicinity of the beam waist on the beam path of the electron beam (hereinafter, simply referred to as a beam) EB that is converged by the objective lens. Therefore, a plurality of beams EB passing through the electrostatic multipole 70c are mutually exclusive by the Coulomb force acting between them, and the magnification of the electron beam optical system is changed.

因此，於本實施形態，將具有XY倍率修正用之第1靜電透鏡70c₁、與射束之照射位置控制(及照射位置偏移修正)、亦即因發光元件84生成之光學圖案之投影位置調整(及投影位置偏移修正)用之第2靜電透鏡70c₂的靜電多極70c，設置在電子束光學系統70內部。第1靜電透鏡70c₁，例如圖4之示意，係將於X軸方向及Y軸方向之縮小倍率，以高速且個別的加以修正。又，亦可由第1靜電透鏡70c₁與第2靜電透鏡70c₂之各個，進行XY倍率修正與電子束之照射位置控制(及照射位置偏移修正)。此外，亦可作成能由第1靜電透鏡70c₁進行與X軸方向及Y軸方向不同之軸方向之倍率調整。再者，亦可不設置第1靜電透鏡70c₁與第2靜電透鏡70c₂中之任一方，靜電多極70c可具有追加之靜電透鏡。 Therefore, in the present embodiment, the first electrostatic lens 70c _{1 for} XY magnification correction and the irradiation position control (and the irradiation position offset correction) of the beam, that is, the projection position of the optical pattern generated by the light-emitting element 84 are provided. The electrostatic multipole 70c of the second electrostatic lens 70c ₂ for adjustment (and projection position offset correction) is provided inside the electron beam optical system 70. The first electrostatic lens 70c ₁ , for example, as shown in FIG. 4 , is corrected at a high speed and individually by a reduction ratio in the X-axis direction and the Y-axis direction. Further, each of the first or by the electrostatic lens 70c ₁ and 70c ₂ of the second electrostatic lens, the XY magnification correction for controlling the irradiation position of the electron beam (and the irradiation position shift correction). Further, it is also possible to adjust the magnification in the axial direction different from the X-axis direction and the Y-axis direction by the first electrostatic lens 70c ₁ . Further, either one of the first electrostatic lens 70c ₁ and the second electrostatic lens 70c ₂ may not be provided, and the electrostatic multipole 70c may have an additional electrostatic lens.

又，第2靜電透鏡70c₂，將因各種振動等引起之射束之照射位置偏移(後述之切割圖案(cut pattern)之投影位置偏移)一起修正。第2靜電透鏡70c₂，亦用於曝光時進行之射束相對晶圓W之循跡控制時之射束偏向控制、亦即射束之照射位置控制。 Further, the second electrostatic lens 70c ₂ corrects the irradiation position shift of the beam due to various vibrations or the like (the projection position of the cut pattern to be described later is shifted). The second electrostatic lens 70c _{2 is} also used for beam deflection control when the beam is subjected to tracking control with respect to the wafer W during exposure, that is, irradiation position control of the beam.

電子束光學系統70之縮小倍率，在不進行倍率修正之狀態下，設計上例如為1/200、1/120、1/80等，亦可是其他倍率。 The reduction ratio of the electron beam optical system 70 is designed to be, for example, 1/200, 1/120, 1/80, etc., in the state where the magnification correction is not performed, and may be other magnifications.

本實施形態，於底板38以懸吊狀態支承有複數個、此處為45個電子束光學系統70。 In the present embodiment, a plurality of 45 electron beam optical systems 70 are supported by the bottom plate 38 in a suspended state.

於鏡筒104之射出端，如圖2所示形成電子束之出口104a，在此出口104a部分之下方配置有反射電子檢測裝置106。反射電子檢測裝置106，係配置在於冷卻板74和前述出口104a對向形成之圓形(或矩形)之開口74a內部。具體而言，就電子束光學系統70之光軸Axe在Y軸方向之兩側設有一對反射電子檢測裝置106y₁、106y₂。又，圖2中，雖省略圖示，但就光軸Axe，在X軸方向之兩側設有一對反射電子檢測裝置106x₁、106x₂(參照圖6)。上述2對反射電子檢測裝置106之各個，係由例如半導體檢測器構成，檢測從晶圓上之對準標記、或基準標記等之檢測對象標記產生之反射成分，此處係檢測反射電子，將與檢測到之反射電子對應之檢測訊號送至訊號處理裝置108(參照圖6)。訊號處理裝置108，將複數個反射電子檢測裝置106之檢測訊號以未圖示之擴大機加以増幅後進行訊號處理，將該處理結果送至主控制裝置110(參照圖6)。又，反射電子檢測裝置106，可僅設於45個電子束光學系統70之一部分(至少1個)、亦可不設置。 At the exit end of the lens barrel 104, an electron beam outlet 104a is formed as shown in Fig. 2, and a reflected electron detecting means 106 is disposed below the outlet 104a portion. The reflected electron detecting device 106 is disposed inside the circular (or rectangular) opening 74a in which the cooling plate 74 and the outlet 104a are opposed to each other. Specifically, a pair of reflected electron detecting devices 106y ₁ and 106y _{2 are} provided on both sides of the optical axis Axe of the electron beam optical system 70 in the Y-axis direction. In FIG. 2, although not shown, a pair of reflected electron detecting devices 106x ₁ and 106x _{2 are} provided on both sides of the optical axis Axe in the X-axis direction (see FIG. 6). Each of the two pairs of reflected electron detecting devices 106 is composed of, for example, a semiconductor detector, and detects a reflection component generated from an alignment mark on a wafer or a detection target mark such as a reference mark. Here, the reflected electrons are detected. The detection signal corresponding to the detected reflected electrons is sent to the signal processing device 108 (see Fig. 6). The signal processing device 108 performs signal processing on the detection signals of the plurality of reflected electron detecting devices 106 by an amplifier (not shown), and sends the processing result to the main control device 110 (see FIG. 6). Further, the reflected electron detecting device 106 may be provided only in one (at least one) of the 45 electron beam optical systems 70, or may not be provided.

反射電子檢測裝置106_x1、106_x2、106_y1、106_y2可固定於鏡筒104，亦可安裝於冷卻板74。 The reflected electron detecting devices 106 _x1 , 106 _x2 , 106 _y1 , 106 _y2 may be fixed to the lens barrel 104 or may be attached to the cooling plate 74.

於冷卻板74，與45個電子束光學系統70之鏡筒104之出口104a個別對向形成有45個開口74a，於該開口74a內配置有2對反射電子檢測裝置106。又，曝光裝置100可以不具備反射電子檢測裝置106。此外，亦可不在曝光裝置100設置冷卻板。 In the cooling plate 74, 45 openings 74a are formed integrally with the outlet 104a of the lens barrel 104 of the 45 electron beam optical systems 70, and two pairs of reflected electron detecting devices 106 are disposed in the opening 74a. Further, the exposure device 100 may not include the reflected electron detecting device 106. Further, the cooling plate may not be provided in the exposure device 100.

於本實施形態，由於在鏡筒104之內部空間露出光電層60之電子放射面，因此為避免光電層60曝露於大氣，鏡筒104之內部空間亦為真空空間。此場合，鏡筒104之內部空間與其外部之真空室33相較，可以是高度的真空空間。此場合，真空室33之抽真空與鏡筒104內之抽真空可分別進行。 In the present embodiment, since the electron emission surface of the photovoltaic layer 60 is exposed in the internal space of the lens barrel 104, the internal space of the lens barrel 104 is also a vacuum space in order to prevent the photovoltaic layer 60 from being exposed to the atmosphere. In this case, the inner space of the lens barrel 104 may be a high vacuum space as compared with the vacuum chamber 33 outside thereof. In this case, the evacuation of the vacuum chamber 33 and the evacuation in the lens barrel 104 can be performed separately.

接著，簡單說明曝光裝置100之一組裝例。在曝光裝置製造商工廠內之無塵室內部所設置之高真空狀態之真空室內，組裝光學系統18。此時，除了光學系統18之光束照射裝置80外之構成部分，係在預先組裝妥之狀態下搬入真空室內，將45個光束照射裝置80***底板38之貫通孔38a內部，並進行位置之微調整後，將貫通孔38a與光束照射裝置80間之間隙加以密封，如此即完成光學系統18之組裝。在此組裝完成之狀態下，45個鏡筒104各個之內部相對外部為氣密狀態，成為可維持內部之高真空狀態的狀態。此時，由於真空室33內部亦為高真空狀態，因此最好是將形成在冷卻板74之45個開口74a以密封構件加以貼合等，暫時的堵塞較佳。 Next, an example of assembly of the exposure apparatus 100 will be briefly described. The optical system 18 is assembled in a vacuum chamber in a high vacuum state provided in the clean room interior of the exposure apparatus manufacturer's factory. At this time, the components other than the light beam irradiation device 80 of the optical system 18 are carried into the vacuum chamber in a pre-assembled state, and the 45 light beam irradiation devices 80 are inserted into the through holes 38a of the bottom plate 38, and the position is slightly After the adjustment, the gap between the through hole 38a and the beam irradiation device 80 is sealed, thus completing the assembly of the optical system 18. In the state in which the assembly is completed, the inside of each of the 45 lens barrels 104 is in an airtight state with respect to the outside, and is in a state in which the internal high vacuum state can be maintained. At this time, since the inside of the vacuum chamber 33 is also in a high vacuum state, it is preferable that the 45 openings 74a formed in the cooling plate 74 are bonded together by a sealing member, and temporary clogging is preferable.

接著，將組裝之光學系統18從真空室搬出至外部(無塵室內) 後，於無塵室內，從上方***框架16之開口16a內，組裝於框架16。在此組裝妥之狀態下，箱體19與框架16之開口16a之間幾乎不存在間隙。 Next, the assembled optical system 18 is carried out from the vacuum chamber to the outside (clean room) Thereafter, it is inserted into the opening 16a of the frame 16 from above in the clean room, and assembled to the frame 16. In this assembled state, there is almost no gap between the casing 19 and the opening 16a of the frame 16.

又，在光學系統18對框架16之組裝前，先進行載台系統14之組裝，並將組裝成之載台系統14搬入載台室10內，以及與載台系統14相關之必要的調整等。 Further, before the optical system 18 assembles the frame 16, the assembly of the stage system 14 is performed, and the assembled stage system 14 is carried into the stage chamber 10, and the necessary adjustments associated with the stage system 14 are performed. .

光學系統18對框架16之組裝後，將形成在冷卻板74之45個開口74a暫時的封閉，將密封構件拆除後，同時進行箱體19內部之抽真空與載台室10內部之抽真空。 After the optical system 18 is assembled to the frame 16, the 45 openings 74a formed in the cooling plate 74 are temporarily closed, and after the sealing member is removed, the vacuum inside the casing 19 and the vacuum inside the stage 10 are simultaneously performed.

此時，於箱體19內部之真空室33，係以維持此時之真空狀態、或更高之真空狀態得方式進行抽真空。又，複數個條光束照射裝置80之各個，其分別具有之發光元件84之至少一部分，其功能係作為將真空室33與其外側(箱體19之外部)空間加以分隔之間隔壁(真空間隔壁)。真空室33之外側為大氣壓、或較大氣壓略為正壓。載台室10內部之抽真空，係進行至與真空室33相較其真空度低(氣壓高)之中真空狀態。之後，進行與光學系統18相關之必要調整。 At this time, the vacuum chamber 33 inside the casing 19 is evacuated in such a manner as to maintain the vacuum state at this time or a higher vacuum state. Further, each of the plurality of beam irradiation devices 80 has at least a part of the light-emitting elements 84, and functions as a partition wall separating the vacuum chamber 33 from the outside thereof (the outside of the casing 19) (vacuum partition wall) ). The outer side of the vacuum chamber 33 is at atmospheric pressure, or the upper air pressure is slightly positive pressure. The evacuation inside the stage chamber 10 is carried out to a vacuum state in which the degree of vacuum (high pressure) is lower than that of the vacuum chamber 33. Thereafter, the necessary adjustments associated with the optical system 18 are performed.

接著，進行作為次系統構成之各部間之所需的機械連接、電氣電路之配線連接、氣壓電路之配管連接等，完成曝光裝置100之組裝。 Next, the required mechanical connection between the respective components of the sub-system, the wiring connection of the electric circuit, the piping connection of the pneumatic circuit, and the like are performed, and the assembly of the exposure apparatus 100 is completed.

又，針對上述各部所需之調整中，包含針對各種光學系統為達成光學精度之調整、針對各種機械系統為達成機械精度之調整、以及針對各種電氣系統為達成電氣精度之調整。 In addition, adjustments required for each of the above-described components include adjustment of optical precision for various optical systems, adjustment of mechanical precision for various mechanical systems, and adjustment of electrical accuracy for various electrical systems.

由以上說明可知，於本實施形態之曝光裝置100，如圖5所示，曝光時，從發光元件84對光電元件54之受光面上之X軸方向長度Smm、Y軸方向長度Tmm之矩形區域內部射光束，因此照射而生成之電子束透過具有縮小倍率1/200之電子束光學系統70，照射於像面(位置對準於像面之晶圓面)上之矩形區域(曝光場(field))。亦即，於本實施形態之曝光裝置100，包含光束照射裝置80(包含發光元件84及與此一體之光電元件54)與對應光束照射裝置80之電子束光學系統70，構成縮小倍率1/200之直筒型多光束光學系統200(參照圖6)，在XY平面內以前述矩陣狀之配置具有45個此多光束光學系統200。因此，本實施形態之曝光裝置100之光學系統，係具有45個縮小倍率1/200之縮小光學系統的多列(multi-column)電子束光學系統。 As described above, in the exposure apparatus 100 of the present embodiment, as shown in FIG. 5, a rectangular region in the X-axis direction length Smm and the Y-axis direction length Tmm from the light-emitting element 84 on the light-receiving surface of the photovoltaic element 54 is exposed. The internal beam is irradiated, and the electron beam generated by the irradiation is transmitted through the electron beam optical system 70 having a reduction ratio of 1/200, and is irradiated onto the image plane (positioned on the wafer surface of the image plane). Rectangular area (field). That is, the exposure apparatus 100 of the present embodiment includes the light beam irradiation device 80 (including the light-emitting element 84 and the photoelectric element 54 integrated therewith) and the electron beam optical system 70 of the corresponding light beam irradiation device 80, and constitutes a reduction ratio of 1/200. The straight multi-beam optical system 200 (see FIG. 6) has 45 such multi-beam optical systems 200 arranged in the matrix in the XY plane. Therefore, the optical system of the exposure apparatus 100 of the present embodiment is a multi-column electron beam optical system having 45 reduction optical systems of a reduction ratio of 1/200.

又，於曝光裝置100，舉一例而言，以直徑300mm之晶圓為曝光對象，為了與晶圓對向配置45個電子束光學系統70，係將電子束光學系統70之光軸Axe之配置間隔設為例如43mm。如此一來，由於1個電子束光學系統70負責的曝光區域最大為43mm×43mm之矩形區域，如前所述的，晶圓載台WST於X軸方向及Y軸方向之移動行程只要有50mm即足夠。又，電子束光學系統70之數量不限於45個，可根據晶圓之直徑、晶圓載台WST之行程等加以決定。 Further, in the exposure apparatus 100, for example, a wafer having a diameter of 300 mm is used as an exposure target, and in order to arrange 45 electron beam optical systems 70 opposite to the wafer, the optical axis Axe of the electron beam optical system 70 is disposed. The interval is set to, for example, 43 mm. In this way, since the exposure area of one electron beam optical system 70 is at most a rectangular area of 43 mm × 43 mm, as described above, the movement distance of the wafer stage WST in the X-axis direction and the Y-axis direction is 50 mm. enough. Further, the number of the electron beam optical systems 70 is not limited to 45, and can be determined according to the diameter of the wafer, the stroke of the wafer stage WST, and the like.

圖6中，以方塊圖顯示了以曝光裝置100之控制系統為主構成之主控制裝置110之輸出入關係。主控制裝置110包含微電腦等，統籌控制包含圖6所示各部分之曝光裝置100之構成各部分。圖6中，連接於控制部11之光束照射裝置80，包含根據來自主控制裝置110之指示由控制部11加以控制之發光元件、亦即自發光型對比元件陣列84。又，連接於控制部11之電子束光學系統70，包含根據來自主控制裝置110之指示由控制部11加以控制之一對電磁透鏡70a、70b及靜電多極70c(第1靜電透鏡70c₁及第2靜電透鏡70c₂)。此外，圖6中，符號500係顯示包含前述多光束光學系統200、控制部11、訊號處理裝置108所構成之曝光單元。於曝光裝置100，設有45個曝光單元500。 In Fig. 6, the input/output relationship of the main control unit 110 mainly composed of the control system of the exposure apparatus 100 is shown in a block diagram. The main control device 110 includes a microcomputer or the like, and collectively controls the components of the exposure device 100 including the respective portions shown in FIG. In Fig. 6, the light beam irradiation device 80 connected to the control unit 11 includes a light-emitting element, that is, a self-light-emitting type contrast element array 84, which is controlled by the control unit 11 in accordance with an instruction from the main control unit 110. In turn, connected to the control unit 11 of the electron beam optical system 70, comprising one to be controlled by the control unit 11 according to an instruction from the main controller 110 of the electromagnetic lenses 70a, 70b and electrostatic multipole 70c (70c ₁ of the first electrostatic lens and The second electrostatic lens 70c ₂ ). In addition, in FIG. 6, reference numeral 500 denotes an exposure unit including the multi-beam optical system 200, the control unit 11, and the signal processing device 108. In the exposure apparatus 100, 45 exposure units 500 are provided.

又，於曝光裝置100，因以下理由，不是正方形而是採用矩形(長方形)曝光場。 Further, in the exposure apparatus 100, a rectangular (rectangular) exposure field is used instead of a square for the following reason.

圖7中，在表示電子束光學系統之直徑D之有效區域(像差有效區域)的圓內，顯示了正方形之曝光場(正方形場)SF與矩形之曝光場(矩形場)RF。由此圖7清楚可知，欲最大限度使用電子束光學系統之有效區域的正方形場SF較佳。不過，正方形場SF之場合，如圖7所示，作為場寬會有30%(1/2)程度之損失。例如，設短邊長度為a、長邊長度為b，若係具有a/b=11/60之長寬比的矩形場RF的話，有效區域大致為場寬。此點，在多列時會是非常大的優點。除此之外，亦有能提升檢測對準標記時之標記檢測感度的優點。不論場之形狀為何，照射於場內之電子之總量相同，因此矩形場與正方形場相較電流密度大，因此，將標記配置在晶圓上之較小面積亦能以充分的檢測感度進行檢測。又，矩形場在像差管理上較正方形場容易。此外，實用的長寬比a/b為1/12~1/4。 In Fig. 7, in a circle indicating the effective area (aberration effective area) of the diameter D of the electron beam optical system, a square exposure field (square field) SF and a rectangular exposure field (rectangular field) RF are displayed. As is clear from Fig. 7, it is preferable to use the square field SF of the effective region of the electron beam optical system to the utmost. However, in the case of the square field SF, as shown in Fig. 7, there will be 30% as the field width (1/ 2) Loss of degree. For example, if the short side length is a and the long side length is b, if the rectangular field RF having an aspect ratio of a/b = 1/60 is used, the effective area is substantially the field width. This point is a very big advantage in multiple columns. In addition to this, there is an advantage that the sensitivity of the mark detection when detecting the alignment mark can be improved. Regardless of the shape of the field, the total amount of electrons that illuminate the field is the same, so the rectangular field has a larger current density than the square field. Therefore, the smaller area of the mark disposed on the wafer can also be performed with sufficient detection sensitivity. Detection. Also, the rectangular field is easier to manage than the square field in aberration management. In addition, the practical aspect ratio a/b is 1/12 to 1/4.

圖7中，無論正方形場SF及矩形場RF任一者之曝光場皆是設定為包含電子束光學系統之光軸AXe。然而，不限於此，亦可將曝光場以不包含光軸AXe之方式，設定在像差有效區域內。又，將曝光場設定為矩形(含正方形)以外之形狀、例如圓弧狀亦可。 In Fig. 7, the exposure fields of either the square field SF and the rectangular field RF are set to include the optical axis AXe of the electron beam optical system. However, the present invention is not limited thereto, and the exposure field may be set in the aberration effective region so as not to include the optical axis AXe. Further, the exposure field may be set to a shape other than a rectangle (including a square), for example, an arc shape.

其次，針對以本實施形態之曝光裝置100，在晶圓W之曝光中進行之劑量(doze)控制進行說明。 Next, the doze control performed in the exposure of the wafer W by the exposure apparatus 100 of this embodiment is demonstrated.

曝光場內之照度不均，係由主控制裝置110在後述曝光時，藉由就每一微型LED84a進行透過施加電壓之控制以進行之光束強度控制，就結果而言，進行在光電層60之電子放射面上之面內照度分布、及在與此對應之晶圓面上之曝光場RF內之照度分布的調整、亦即進行劑量控制。換言之，正確的調整照射於曝光場RF之複數條電子束各個之強度。 The illuminance unevenness in the exposure field is controlled by the main control device 110 during the exposure described later by the control of the transmission voltage applied to each of the micro LEDs 84a, and as a result, the photo-electric layer 60 is performed. The in-plane illuminance distribution on the electron emission surface and the adjustment of the illuminance distribution in the exposure field RF on the wafer surface corresponding thereto, that is, dose control. In other words, the intensity of each of the plurality of electron beams that are incident on the exposure field RF is correctly adjusted.

又，作為在光電層60之電子放射面上之面內照度分布之調整的前提，係以藉由光電轉換而從光電層60之電子放射面生成之複數條電子束之強度(電子束之照度、射束電流量)大致相同之方式，進行以發光元件84產生照射於光電層60之複數個光束之強度調整。不過，亦可使藉由光電轉換而從光電層60之電子放射面生成之複數條電子束中至少一部分之射束強度(電子束之照度、射束電流量)，與其他射束之強度不同之方式，進行照射於光電層60之複數條光束之強度調整。 Further, as an adjustment of the in-plane illuminance distribution on the electron emission surface of the photovoltaic layer 60, the intensity of the electron beams generated from the electron emission surface of the photovoltaic layer 60 by photoelectric conversion (the illuminance of the electron beam) And the amount of beam current is substantially the same, and the light-emitting element 84 is used to generate a photo The intensity of the plurality of beams incident on the photovoltaic layer 60 is adjusted. However, the beam intensity (the illuminance of the electron beam, the beam current amount) of at least a part of the plurality of electron beams generated from the electron emission surface of the photovoltaic layer 60 by photoelectric conversion may be different from the intensity of the other beams. In this manner, the intensity adjustment of the plurality of beams irradiated to the photovoltaic layer 60 is performed.

又，形成在晶圓之抗蝕劑層，不單會受到在光電層60之電子放射面上之面內照度分布之影響，亦會受其他原因、例如電子之前方散射、後方散射、或起霧(fogging)模糊等之影響。 Moreover, the resist layer formed on the wafer is not only affected by the in-plane illuminance distribution on the electron-emitting surface of the photovoltaic layer 60, but also by other causes such as electron scattering, back scattering, or fogging. (fogging) the effects of blurring, etc.

此處，前方散射係指在射入晶圓表面之抗蝕劑層內之電子到達晶圓表面為止之期間於抗蝕劑層內散射的現象，後方散射係指透過抗蝕劑層到達晶圓表面之電子在晶圓表面或其內部散射而再度射入抗蝕劑層內、散射至周圍的現象。又，起霧係指來自抗蝕劑層表面之反射電子，在例如冷卻板74之底面再反射，而對周圍增加劑量的現象。 Here, the front scattering refers to a phenomenon in which the electrons in the resist layer incident on the surface of the wafer reach the surface of the wafer, and the back scattering means that the wafer reaches the wafer through the resist layer. The electrons on the surface are scattered on the surface of the wafer or inside and are again incident on the resist layer and scattered to the surroundings. Further, fogging refers to a phenomenon in which reflected electrons from the surface of the resist layer are reflected again on the bottom surface of the cooling plate 74 to increase the dose around the surface.

由上述說明可知，受前方散射影響之範圍，較後方散射及起霧窄，因此於曝光裝置100，對前方散射、後方散射及起霧係採用不同之修正方法。 As can be seen from the above description, since the range affected by the forward scattering is narrower than the back scattering and the fogging, the exposure apparatus 100 employs different correction methods for forward scattering, back scattering, and fogging.

於用以減輕前方散射成分之影響的PEC(近接效應修正，Proximity Effect Correction)，主控制裝置110預期前方散射成分之影響，透過控制部11進行使用發光元件84之面內照度分布之調整。 In the PEC (Proximity Effect Correction) for reducing the influence of the forward scattering component, the main control device 110 predicts the influence of the forward scattering component, and the control unit 11 performs adjustment of the in-plane illuminance distribution using the light-emitting element 84.

另一方面，於用以減輕後方散射成分之影響的PEC、及用以減輕起霧之影響的FEC(起霧效應修正，Fogging Effect Correction)，主控制裝置110透過控制部11，必須以某種程度之空間頻率進行面內照度分布之調整。 On the other hand, in the PEC for reducing the influence of the backscattering component and the FEC (Fogging Effect Correction) for reducing the influence of fogging, the main control device 110 must pass through the control unit 11 and must The spatial frequency of the degree is adjusted for the in-plane illumination distribution.

又，本實施形態之曝光裝置100，例如係用於互補性微影。此場合，以例如在使用ArF光源之液浸曝光中藉由利用雙層布局等而形成有L/S圖案之晶圓為曝光對象，用於為進行該線圖案之切斷之切割圖案之形成。於曝光裝置100，可形成與形成在光電元件54之遮光膜58之72000個孔徑58a之各個對應的切割圖案。 Further, the exposure apparatus 100 of the present embodiment is used, for example, for complementary lithography. In this case, for example, in a immersion exposure using an ArF light source, a wafer having an L/S pattern formed by using a two-layer layout or the like is used as an exposure target, and is used for forming a cut pattern for cutting the line pattern. . Exposure The device 100 can form a cutting pattern corresponding to each of the 72000 apertures 58a formed in the light shielding film 58 of the photovoltaic element 54.

本實施形態中，對晶圓之處理之流程如下。 In the present embodiment, the flow of processing the wafer is as follows.

首先，將塗布有電子線抗蝕劑之曝光前晶圓W，在載台室10內，載置於晶圓載台WST上並以靜電夾頭加以吸附。 First, the pre-exposed wafer W coated with the electron beam resist is placed on the wafer stage WST in the stage chamber 10 and adsorbed by an electrostatic chuck.

對應晶圓載台WST上之晶圓W上形成之例如45個照射(shot)區域之各個，對形成在刻劃線(street line)之至少各1個對準標記從各電子束光學系統70照射電子束，以反射電子檢測裝置106_x1、106_x2、106_y1、106_y2之至少1個檢測來自至少各1個對準標記之反射電子，進行晶圓W之全點對準測量，根據此全點對準測量之結果，對晶圓W上之45個照射區域，開始使用45個曝光單元500(多光束光學系統200)之曝光。例如若係互補性微影之情形，在對晶圓W上形成之以X軸方向為週期方向之L/S圖案之切割圖案，使用從各多光束光學系統200射出之多數射束(電子束)形成時，一邊於Y軸方向掃描晶圓W(晶圓載台WST)、一邊控制各射束之照射時序(on/off)。又，亦可不進行全點對準測量，而進行對應晶圓W之部分照射區域形成之對準標記之檢測，根據其結果來實施45個照射區域之曝光。此外，本實施形態中，曝光單元500之數量與照射區域之數量雖相同，但亦可不同。例如，曝光單元500之數量可較照射區域之數量少。又，亦可在載台室10之外進行對準標記之檢測。此場合，可不進行在載台室10內之對準標記之檢測。 Corresponding to each of, for example, 45 shot regions formed on the wafer W on the wafer stage WST, at least one alignment mark formed on the street line is irradiated from each electron beam optical system 70 In the electron beam, at least one of the reflected electron detecting devices 106 _x1 , 106 _x2 , 106 _y1 , and 106 _y2 detects reflected electrons from at least one of the alignment marks, and performs full-point alignment measurement of the wafer W. As a result of the dot alignment measurement, exposure of 45 exposure units 500 (multi-beam optical system 200) was started for 45 illumination areas on the wafer W. For example, in the case of complementary lithography, a plurality of beams (electron beams) emitted from the respective multi-beam optical systems 200 are used in a cutting pattern formed on the wafer W in an L/S pattern having a periodic direction in the X-axis direction. At the time of formation, the irradiation timing (on/off) of each beam is controlled while scanning the wafer W (wafer stage WST) in the Y-axis direction. Further, the alignment mark corresponding to the partial irradiation region of the wafer W may be detected without performing the full-point alignment measurement, and the exposure of the 45 irradiation regions may be performed based on the result. Further, in the present embodiment, the number of the exposure units 500 is the same as the number of the irradiation regions, but may be different. For example, the number of exposure units 500 can be less than the number of illumination areas. Further, the detection of the alignment mark can be performed outside the stage chamber 10. In this case, the detection of the alignment mark in the stage chamber 10 may not be performed.

接著，針對使用光束照射裝置80(自發光型對比元件陣列84)之曝光順序，進行說明。此處，假設性的設定在晶圓上某一區域內彼此相鄰XY2維配置之多數個10nm方形(與由透過孔徑58a之光束而來之電子束之照射區域之形狀及大小一致)之像素區域，針對使所有像素曝光之情形進行說明。又，此處，係設在自發光型對比元件陣列(發光元件)84，設有包含於X軸方向以既定節距排列之6000個微型LED、於Y軸方向以既定節距排列的A、B、C、......、K、L之12個微型LED列(LED列)。 Next, the exposure sequence using the beam irradiation device 80 (self-luminous type contrast element array 84) will be described. Here, it is assumed that pixels of a plurality of 10 nm squares (the shape and size of the irradiation region of the electron beam which is transmitted from the light beam transmitted through the aperture 58a) are adjacent to each other in a certain region on the wafer. The area is described for the case where all pixels are exposed. Here, it is provided in a self-luminous type contrast element array (light-emitting element) 84, and is provided on the X-axis side. 12 micro LED rows (LED columns) of A, B, C, ..., K, L arranged at a predetermined pitch in 6000 micro LEDs arranged at a predetermined pitch.

著眼於LED列A進行說明。對晶圓上排列於X軸方向之某一行(假設為第P行)之連續的6000像素區域開始使用LED列A之曝光。在此曝光開始之時間點，來自LED列A之光束(正確而言，係與從LED列A發出之光束對應之電子束)，係假設在起始點。接著，在曝光開始後追循晶圓W之+Y方向(或-Y方向)之掃描一邊使射束往+Y方向(或-Y方向)偏向、一邊續行對同一6000像素區域之曝光。接著，例如假設在時間Ta〔s〕該6000像素區域之曝光結束時，在該期間，晶圓載台WST以速度V〔nm/s〕、例如前進Ta×V〔nm〕。此處，為方便起見，設為Ta×V=96〔nm〕。 Focus on LED column A for explanation. The exposure of the LED column A is started using a continuous 6000 pixel region of a row (assuming the P row) arranged on the wafer in the X-axis direction. At the point in time when the exposure starts, the light beam from the LED column A (correctly, the electron beam corresponding to the light beam emitted from the LED column A) is assumed to be at the starting point. Next, after the start of the exposure, the scanning of the +W direction (or the -Y direction) of the wafer W is followed, and the beam is deflected in the +Y direction (or the -Y direction) while continuing exposure to the same 6000 pixel region. Next, for example, when the exposure of the 6000 pixel region is completed at time Ta[s], the wafer stage WST is advanced at a speed of V [nm/s], for example, by Ta x V [nm]. Here, for the sake of convenience, it is assumed that Ta × V = 96 [nm].

接著，在晶圓載台WST以速度V、往+Y方向掃描24nm之期間，使射束回到起始點。此時，使射束off(使強度為零)以避免實際上晶圓上之抗蝕劑感光。 Next, the beam is returned to the starting point while the wafer stage WST is scanning at a speed V for 24 nm in the +Y direction. At this point, the beam is off (the intensity is zero) to avoid the actual exposure of the resist on the wafer.

此時，由於晶圓載台WST從上述曝光開始時間點往+Y方向前進了120nm，因此第(P+12)行之連續的6000像素區域與在曝光開始時間點之第P行之6000像素區域位在相同位置。 At this time, since the wafer stage WST advances 120 nm from the exposure start time point to the +Y direction, the continuous 6000 pixel area of the (P+12)th row and the 6000 pixel area of the Pth line of the exposure start time point. In the same position.

因此，以同樣方式，一邊使射束偏向追循晶圓載台WST、一邊使第(P+12)行之連續的6000像素區域曝光。 Therefore, in the same manner, the 6,000 pixel regions of the (P+12)th row are exposed while the beam is biased toward the wafer stage WST.

實際上，係與第P行之6000像素區域之曝光並行，第(P+1)行~第(P+11)行各個之6000像素，即因LED列B、C、......、K、L而曝光。 In fact, in parallel with the exposure of the 6000 pixel region of the Pth row, the 6000 pixels of the (P+1)th to the (P+11)th rows, that is, because of the LED columns B, C, ... , K, L and exposure.

以此方式，針對晶圓上之X軸方向之長度60μm之寬度之區域，可一邊於Y軸方向掃描晶圓載台WST一邊進行曝光(掃描曝光)，若使晶圓載台WST於X軸方向步進60μm來進行同樣的掃描曝光的話，即能使於該X軸方向相鄰之長度60μm之寬度區域曝光。因此，藉由交互的重複上述掃描曝光與晶圓載台往X軸方向之步進，即能將晶圓上之1個照射區域之曝光以1個曝光單元500來進行。又，實際上，由於能使用45個曝光單元500並行晶圓上互異之照射區域之曝光，因此可進行晶圓全面之曝光。 In this manner, for a region having a width of 60 μm in the X-axis direction on the wafer, exposure (scanning exposure) can be performed while scanning the wafer stage WST in the Y-axis direction, and if the wafer stage WST is oriented in the X-axis direction When the same scanning exposure is performed at 60 μm, the width region of the length of 60 μm adjacent in the X-axis direction can be exposed. Therefore, by repeating the above scanning exposure and wafer by interaction By stepping the stage in the X-axis direction, exposure of one irradiation area on the wafer can be performed by one exposure unit 500. Further, in practice, since 45 exposure units 500 can be used to expose the exposure of the different irradiation regions on the wafer in parallel, the entire exposure of the wafer can be performed.

又，由於曝光裝置100係用於互補性微影，用於對晶圓W上形成之例如以X軸方向為週期方向之L/S圖案的切割圖案之形成，因此可使自發光型對比元件陣列84之72000個微型LED中之任意微型LED為on來形成切割圖案。此場合，可使72000條射束同時成on的狀態、亦可不如此。 Moreover, since the exposure apparatus 100 is used for complementary lithography for forming a dicing pattern formed on the wafer W, for example, an L/S pattern having a periodic direction in the X-axis direction, the self-luminous type contrast element can be made. Any of the 72,000 micro LEDs of array 84 is on to form a cut pattern. In this case, 72,000 beams can be simultaneously turned on, or not.

於本實施形態之曝光裝置100，係在依據上述曝光順序對晶圓W之掃描曝光中，以主控制裝置110根據位置測量系統28之測量值，控制載台驅動系統26並透過各曝光單元500之控制部11控制光束照射裝置80及電子束光學系統70。此時，根據主控制裝置110之指示，視需要由控制部11進行前述之劑量控制。 In the exposure apparatus 100 of the present embodiment, in the scanning exposure of the wafer W in accordance with the exposure sequence, the main control unit 110 controls the stage driving system 26 and transmits the exposure unit 500 based on the measured value of the position measuring system 28. The control unit 11 controls the light beam irradiation device 80 and the electron beam optical system 70. At this time, according to the instruction of the main control device 110, the above-described dose control is performed by the control unit 11 as needed.

以上說明之劑量控制，由於係藉由控制發光元件、亦即控制自發光型對比元件陣列84來進行之劑量控制，因此可以說是動態的劑量控制 The dose control described above is a dynamic dose control because the dose control is performed by controlling the light-emitting elements, that is, controlling the self-luminous type contrast element array 84.

然而，於曝光裝置100，並不限於此，亦可採用以下之劑量控制。 However, the exposure apparatus 100 is not limited thereto, and the following dose control may be employed.

例如會有因光學系統引起之模糊(blur)及/或因抗蝕劑模糊，而如圖8(A)所示，在晶圓上原本應是正方形(或矩形)之切割圖案(抗蝕劑圖案)CP，例如成為4角(corner)成圓弧之切割圖案CP’的情形。於本實施形態，亦可如圖8(B)所示，透過在形成在遮光膜58之孔徑58a之4角設有輔助圖案58c的非矩形孔徑58a’將光束照射於光電層60，將藉由光電轉換產生之電子束透過電子束光學系統70照射於晶圓上，據以將與非矩形孔徑58a’之形狀相異形狀之電子束之照射區域形成在晶圓上。此場合，電子束之照射區域之形狀與待形成於晶圓之切割圖案CP之形狀，可相同、亦可不同。例如，在可幾乎忽視抗蝕劑模糊之影響之情形時，以電子束之照射區域之形狀與所欲之切割圖案CP之形狀(例如矩形或正方形)大致相同之方式，決定孔徑58a’之形狀即可。此場合之孔徑58a’之使用可不視為是劑量控制。 For example, there may be blur caused by the optical system and/or due to resist blur, and as shown in FIG. 8(A), the square (or rectangular) cutting pattern should be originally formed on the wafer (resist The pattern CP is, for example, a case where a corner is cut into a circular arc pattern CP'. In the present embodiment, as shown in FIG. 8(B), the light beam may be irradiated onto the photovoltaic layer 60 by the non-rectangular aperture 58a' provided with the auxiliary pattern 58c at the four corners of the aperture 58a of the light shielding film 58. The electron beam generated by the photoelectric conversion is irradiated onto the wafer through the electron beam optical system 70, whereby an irradiation region of the electron beam having a shape different from that of the non-rectangular aperture 58a' is formed on the wafer. In this case, the shape of the irradiation region of the electron beam may be the same as or different from the shape of the cutting pattern CP to be formed on the wafer. For example, it can be almost In the case of the influence of the blur of the resist, the shape of the aperture 58a' may be determined such that the shape of the irradiation region of the electron beam is substantially the same as the shape of the desired cutting pattern CP (for example, a rectangle or a square). The use of aperture 58a' in this case may not be considered a dose control.

此處，於孔徑58a’，無需於矩形孔徑58a之全部4角設置輔助圖案58c，可僅於孔徑58a之4角中之至少一部分設置輔助圖案58c。又，亦可僅在形成於遮光膜58之複數個孔徑58a’之一部分於矩形孔徑58a之全部4角設置輔助圖案58c。又，亦可以形成在遮光膜58之複數個孔徑之一部分為孔徑58a’，而其餘則為孔徑58a。亦即，無需使形成在遮光膜58之複數個孔徑58a’之全部形狀相同。此外，孔徑之形狀、大小等雖然可根據模擬結果加以設計，但最好是能根據實際曝光結果，例如根據電子束光學系統70之特性來使之最佳化。無論如何，係以抑制在晶圓(標的物)上之照射區域之角部變成圓弧之方式，決定孔徑各個之形狀。又，前方散射成分之影響亦能以孔徑形狀加以減輕。 Here, in the aperture 58a', it is not necessary to provide the auxiliary pattern 58c at all four corners of the rectangular aperture 58a, and the auxiliary pattern 58c may be provided only at at least a part of the four corners of the aperture 58a. Further, the auxiliary pattern 58c may be provided only at all four corners of the rectangular aperture 58a at a portion of the plurality of apertures 58a' formed in the light shielding film 58. Further, one of the plurality of apertures formed in the light shielding film 58 may be the aperture 58a', and the rest may be the aperture 58a. That is, it is not necessary to make all the shapes of the plurality of apertures 58a' formed in the light shielding film 58 the same. Further, although the shape, size, and the like of the aperture can be designed based on the simulation results, it is preferable to optimize them according to actual exposure results, for example, according to the characteristics of the electron beam optical system 70. In any case, the shape of each of the apertures is determined such that the corner portion of the irradiation region on the wafer (target object) is prevented from becoming an arc. Further, the influence of the forward scattering component can be alleviated by the aperture shape.

又，例如，在可幾乎忽視光學系統起因之模糊的情形時，孔徑58a’之形狀與電子束之照射區域之形狀可相同。 Further, for example, in the case where the blurring of the cause of the optical system can be almost ignored, the shape of the aperture 58a' and the shape of the irradiation region of the electron beam can be the same.

於曝光裝置100，雖具有複數個、例如具有45個電子束光學系統70，但由於該45個電子束光學系統70係為滿足相同規格而經相同製程製造，因此如圖9(A)之示意圖所示，會有曝光場歪斜之固有畸變(distortion)於45個電子束光學系統70共通產生之情形。此種複數個電子束光學系統70共通之變形，如圖9(B)之示意圖所示，可藉由將位於光電層60上之遮光膜58上之孔徑58a之配置，以抵消或降低上述畸變之方式配置，來加以修正。此外，圖9(A)之圓係顯示電子束光學系統70之像差有效區域。 In the exposure apparatus 100, although there are a plurality of, for example, 45 electron beam optical systems 70, since the 45 electron beam optical systems 70 are manufactured by the same process to satisfy the same specifications, the schematic diagram of FIG. 9(A) is used. As shown, there is a case where the inherent distortion of the exposure field is common to the 45 electron beam optical systems 70. The common electron beam optical system 70 is deformed in common, as shown in the schematic diagram of Fig. 9(B), by offsetting or reducing the distortion by arranging the aperture 58a on the light shielding film 58 on the photovoltaic layer 60. The way it is configured to be corrected. Further, the circle of Fig. 9(A) shows the aberration effective area of the electron beam optical system 70.

圖9(B)中，為易於理解，各孔徑58a係顯示成平行四邊形等而非矩形，實際上，遮光膜58上之孔徑58a係以矩形或正方形形成。此例，係顯示將電子束光學系統70固有之桶形畸變(barrel distortion)，藉由將複數個孔徑58a沿著枕形畸變(pincushion distortion)形狀配置在光電層60上，來加以抵消或降低之情形。又，電子束光學系統70之畸變不限於桶形畸變，在例如電子束光學系統70之畸變係枕形畸變之情形，可以抵消或降低其影響之方式，將複數個孔徑58a配置成桶形畸變形狀。此外，雖以配合各孔徑58a之配置調整對應之作為發光部(亦可稱之為照射源、放射源)之微型LED84a之XY位置，據以調整複數條光束之位置較佳，但在可將光束照射於包含各孔徑58a之區域之情形時等，亦可不進行調整。 In Fig. 9(B), for easy understanding, each of the apertures 58a is shown as a parallelogram or the like instead of a rectangle. Actually, the aperture 58a of the light shielding film 58 is formed in a rectangular or square shape. In this case, the barrel distortion inherent to the electron beam optical system 70 is shown by using a plurality of holes. The diameter 58a is disposed on the photovoltaic layer 60 along the pincushion distortion shape to cancel or reduce it. Further, the distortion of the electron beam optical system 70 is not limited to the barrel distortion, and in the case of, for example, the distortion of the electron beam optical system 70, the shape of the pincushion may cancel or reduce the influence thereof, and the plurality of apertures 58a may be arranged in a barrel distortion. shape. Further, although the XY position of the micro LED 84a corresponding to the light emitting portion (which may be referred to as an irradiation source or a radiation source) is adjusted in accordance with the arrangement of the respective apertures 58a, it is preferable to adjust the positions of the plurality of light beams. When the light beam is irradiated to the region including the respective apertures 58a, the adjustment may not be performed.

如以上之說明，本實施形態之曝光裝置100，具備45個包含多光束光學系統200、控制部11以及訊號處理裝置108構成之曝光單元500(參照圖6)。多光束光學系統200包含光束照射裝置80與電子束光學系統70。光束照射裝置80，包含具有可個別控制之複數個發光部、例如微型LED84a而能提供複數條光束之發光元件84、以及具有來自發光元件84之光束不透過空間(氣體空間、或真空空間、或其兩方)照射之光電層60的光電元件54，電子束光學系統70將因複數條光束照射於光電元件54而從光電元件54放射之電子作為複數條電子束照射於晶圓W。因此，由於曝光裝置100不具有遮蔽孔徑，因此根本上不存在因充電或磁化導致之複雜畸變的產生源，且無助於標的物曝光之多餘電子(反射電子)變少，從而能排除長期性的不安定原因。除此之外，由於對標的物上之電子束之照射狀態與非照射狀態之切換、亦即切換電子束之on/off的切換功能，可在不使用必然伴隨經時劣化之可動部的情形下實現，因此優點相當大。再者，與使用可動部來實現射束切換功能之情形不同的，無需電子束光學系統以外之照明光學系統、投影光學系統等，因此可使裝置構成非常單純，可期待成本降低效果。又，將來，亦可期待與各發光部(自發光型對比元件)84a之現況相較，能藉由高速切換之PEC(近接效果修正)等之實現。 As described above, the exposure apparatus 100 of the present embodiment includes 45 exposure units 500 including a multi-beam optical system 200, a control unit 11, and a signal processing device 108 (see FIG. 6). The multi-beam optical system 200 includes a beam illumination device 80 and an electron beam optical system 70. The beam irradiation device 80 includes a light-emitting element 84 having a plurality of individually controllable light-emitting portions, such as a micro LED 84a, capable of providing a plurality of light beams, and a light-transmissive space (gas space, or vacuum space, or The photo-electric element 54 of the photo-electric layer 60 irradiated by both of them emits electrons emitted from the photo-electric element 54 by the plurality of light beams on the photo-electric element 54 as a plurality of electron beams. Therefore, since the exposure apparatus 100 does not have the shielding aperture, there is no source of complicated distortion due to charging or magnetization, and the amount of excess electrons (reflected electrons) which does not contribute to the exposure of the target is reduced, thereby eliminating long-termity. The cause of instability. In addition, due to the switching between the irradiation state of the electron beam on the target object and the non-irradiation state, that is, the switching function of switching the on/off of the electron beam, it is possible to eliminate the use of the movable portion which is necessarily accompanied by deterioration over time. The next implementation, so the advantages are quite large. Further, unlike the case where the movable portion is used to realize the beam switching function, the illumination optical system, the projection optical system, and the like other than the electron beam optical system are not required, so that the device configuration can be made very simple, and the cost reduction effect can be expected. Further, in the future, it is expected to be realized by a PEC (proximity effect correction) or the like which is switched at a high speed as compared with the current state of each light-emitting portion (self-luminous type contrast element) 84a.

又，根據本實施形態之曝光裝置100，具備：可分別提供光束 (雷射束)LB的複數個發光部(微型LED)84a、與藉由複數個發光部84a之發光將複數個雷射束LB照射於光電層60而從光電層60放射之電子作為複數條電子束EB照射於標的物晶圓W的電子束光學系統70，來自複數個發光部84a之雷射束之各個，不透過空間射入光電層60。因此，由於無需考慮雷射束被氣體分子吸收或散射導致之衰減，因此作為發光部84a，不僅是被氣體分子吸收少之波長(存在於可見~紅外線帶之一部分，被稱為大氣窗)，亦可使用發出其他波長之雷射光之放射源、亦即使用自發光型對比元件。藉由適切地進行波長之選擇，即能以良好效率使用雷射束LB進行光電轉換，將高能量之電子束EB照射於晶圓W上。 Moreover, according to the exposure apparatus 100 of this embodiment, it is provided that the light beam can be separately provided. a plurality of light-emitting portions (micro LEDs) 84a of the (laser beam) LB, and electrons radiated from the photovoltaic layer 60 by the plurality of laser beams LB by the light emission of the plurality of light-emitting portions 84a as a plurality of electrons The electron beam EB is irradiated onto the electron beam optical system 70 of the target wafer W, and each of the laser beams from the plurality of light-emitting portions 84a is incident on the photovoltaic layer 60 without a space. Therefore, since it is not necessary to consider the attenuation caused by the absorption or scattering of the laser beam by the gas molecules, the light-emitting portion 84a is not only a wavelength that is absorbed by the gas molecules but is present in a portion of the visible-infrared band, which is called an atmospheric window. It is also possible to use a radiation source that emits laser light of other wavelengths, that is, a self-luminous type contrast element. By appropriately selecting the wavelength, the laser beam LB can be photoelectrically converted with good efficiency, and the high-energy electron beam EB is irradiated onto the wafer W.

又，根據本實施形態之曝光裝置100，於實際之晶圓曝光時，主控制裝置110係透過載台驅動系統26控制保持晶圓W之晶圓載台WST之Y軸方向之掃描(移動)。與此並行的，主控制裝置110針對曝光單元500之m個(例如45個)多光束光學系統200之各個，使分別通過光電元件54之n個(例如72000個)孔徑58a之n條射束之照射狀態(on狀態與off狀態)就每一孔徑58a分別變化，並使用自發光型對比元件陣列(發光元件)84就每一光束進行光束之強度調整。 Further, according to the exposure apparatus 100 of the present embodiment, the main control unit 110 controls the scanning (movement) of the wafer stage WST holding the wafer W in the Y-axis direction by the stage driving system 26 during actual wafer exposure. In parallel with this, the master control device 110, for each of the m (e.g., 45) multi-beam optical systems 200 of the exposure unit 500, passes n beams of n (e.g., 72,000) apertures 58a of the photocells 54, respectively. The illumination state (on state and off state) is changed for each aperture 58a, and the intensity adjustment of the beam is performed for each beam using a self-luminous type contrast element array (light-emitting element) 84.

又，於曝光裝置100，係藉由靜電多極70c之第1靜電透鏡70c₁，高速且個別地修正因總電流量之變化而產生之起因於庫侖效果之於X軸方向及Y軸方向的縮小倍率(之變化)。又，於曝光裝置100，係藉由第2靜電透鏡70c₂，一次修正因各種振動等引起之射束之照射位置偏差(光學圖案中之明像素、亦即後述切割圖案之投影位置偏差)。 Further, in exposure apparatus 100, based electrostatic multipole 70c by the first electrostatic lens 70c _1, and a high speed due to a change individually correcting the total current amount generated due to the Coulomb effect of the X-axis direction and the Y-axis direction Reduce the magnification (change). Further, in the exposure apparatus 100, the irradiation position deviation of the beam due to various vibrations or the like is corrected by the second electrostatic lens 70c ₂ (the projection position of the cut pattern in the optical pattern, that is, the projection position of the cut pattern described later).

據此，例如能在以使用ArF液浸曝光裝置之雙層佈局等於晶圓上之例如45個照射區域之各個預先形成之以X軸方向為週期方向之微細線與空間圖案之所欲線上之所欲位置形成切割圖案，而能進行高精度且高產量之曝光。 According to this, for example, the two-layer layout using the ArF immersion exposure apparatus can be equal to the pre-formed line of the fine line and the space pattern in which the X-axis direction is the periodic direction, for example, each of the 45 irradiation areas on the wafer. The desired position forms a cutting pattern, and can be exposed to high precision and high yield. Light.

因此，使用本實施形態之曝光裝置100進行前述之互補性微影，進行L/S圖案之切斷之情形時，即使是在各多光束光學系統200，通過複數個孔徑58a中任一孔徑58a之射束成為on狀態之情形時，換言之，無論成on狀態之射束之組合為何，皆能在於晶圓上之例如45個照射區域之各個預先形成之以X軸方向為週期方向之微細線與空間圖案中之所欲線上之所欲位置形成切割圖案。 Therefore, when the above-described complementary lithography is performed by the exposure apparatus 100 of the present embodiment and the L/S pattern is cut, even in each of the multi-beam optical systems 200, any one of the plurality of apertures 58a is passed through the aperture 58a. When the beam is in the on state, in other words, regardless of the combination of the beams in the on state, each of the 45 illumination regions on the wafer, which is formed in advance, is a microwire having a periodic direction in the X-axis direction. A cut pattern is formed with a desired position on a desired line in the space pattern.

又，上述實施形態之曝光裝置100中，可取代具有12列之LED列的自發光型對比元件陣列84，而使用具有13列之LED列的自發光型對比元件陣列。此場合，與此對應的，光電元件54上之孔徑58a之列亦以設置13列較佳。第13列之LED列，係在通常使用之12列之LED列(主LED列)中任一列產生不良時，取代該產生不良之LED列而使用之備用LED列。備用LED列可設置複數個。此外，以可將自發光型對比元件陣列之72000個微型LED之配置區域，分割為複數個、例如分割為2×12=24之部分區域，於分割之每一部分區域設置備用LED列及與此對應之孔徑列。 Further, in the exposure apparatus 100 of the above-described embodiment, a self-luminous type contrast element array having 13 columns of LED rows can be used instead of the self-luminous type contrast element array 84 having 12 columns of LED columns. In this case, correspondingly, the array of apertures 58a on the photovoltaic element 54 is preferably arranged in 13 rows. The LED array of the thirteenth column is a spare LED array used in place of the defective LED array when a failure occurs in any of the 12 columns of LED columns (main LED columns) that are generally used. A plurality of spare LED columns can be set. In addition, the arrangement area of 72000 micro LEDs of the self-luminous type contrast element array can be divided into a plurality of partial regions, for example, divided into 2×12=24, and spare LED columns are arranged in each of the divided regions. Corresponding aperture column.

又，上述實施形態係針對光束照射裝置80由發光元件(自發光型對比元件陣列)84與光電元件54藉由半導體製程一體成形之情形做了說明，但不限於此，亦可使用如圖10所示之包含發光元件184、與和發光元件184不同體且與發光元件分離配置之光電元件136的分離型光束照射裝置180。發光元件184，係在前述自發光型對比元件陣列84之光射出側之面，設置光學元件之一種微透鏡陣列84c者。微透鏡陣列84c，包含與複數個發光部對應、此處係與自發光型對比元件之一種的微型LED84a分別對應設置，與複數個微型LED84a之配置對應在XY平面內彼此交叉之2方向(例如X軸方向及Y軸方向)配置成2維陣列狀之一體化的複數個微透鏡(光學構件、光學元件)。微透鏡陣列84c，將對應之微型LED84a產生之發散光加以聚光後轉換成平行光。又，設在發光元件184之光學元件，不限於折射光學元件，可以是繞射光學元件、或反射光學元件，亦可以是此等之組合。 Further, the above embodiment has been described with respect to the case where the light-emitting device 80 is formed by integrally forming a light-emitting element (self-luminous type contrast element array) 84 and the photovoltaic element 54 by a semiconductor process, but is not limited thereto, and it is also possible to use FIG. The illustrated light-emitting element 184 includes a separate beam illumination device 180 that is different from the light-emitting element 184 and that is separate from the light-emitting element. The light-emitting element 184 is a microlens array 84c of an optical element provided on the light-emitting side of the self-luminous type contrast element array 84. The microlens array 84c includes a plurality of micro LEDs 84a corresponding to a plurality of light emitting portions, and is one of the self-luminous type contrast elements, respectively, and corresponding to the arrangement of the plurality of micro LEDs 84a in two directions intersecting each other in the XY plane (for example, The X-axis direction and the Y-axis direction are arranged in a plurality of microlenses (optical members, optical elements) integrated in a two-dimensional array. Microlens array 84c, The divergent light generated by the corresponding micro LED 84a is condensed and converted into parallel light. Further, the optical element provided in the light-emitting element 184 is not limited to the refractive optical element, and may be a diffractive optical element or a reflective optical element, or a combination thereof.

《第1實施形態之變形例1》 "Modification 1 of First Embodiment"

接著，說明使用圖10所示之分離型光束照射裝置180之變形例1的曝光裝置。 Next, an exposure apparatus using Modification 1 of the separation type beam irradiation device 180 shown in Fig. 10 will be described.

圖11中，顯示了構成變形例1之曝光裝置所具備之光學系統18之45個光電光學單元117中之1個。 In Fig. 11, one of the 45 photoelectric optical units 117 of the optical system 18 included in the exposure apparatus of the first modification is shown.

光電光學單元117，取代前述光束照射裝置80而將發光元件184***底板38之貫通孔38a之點，與前述光電光學單元17不同。於光電光學單元117，發光元件184係兼作為將鏡筒104內部與外部加以隔離之真空間隔壁。於鏡筒104內部之上端部近旁，在發光元件184之微透鏡陣列84c下方透過既定間隙(gap)配置有光電元件136。此變形例1中，亦可不在底板38設置貫通孔38a，而在底板38之下面等配置發光元件184。 The photoelectric optical unit 117 is different from the photoelectric optical unit 17 in that the light-emitting element 184 is inserted into the through hole 38a of the bottom plate 38 instead of the light beam irradiation device 80. In the optoelectronic unit 117, the light-emitting element 184 serves as a vacuum partition that isolates the inside and the outside of the lens barrel 104. In the vicinity of the upper end portion inside the lens barrel 104, a photovoltaic element 136 is disposed under a microlens array 84c of the light-emitting element 184 through a predetermined gap. In the first modification, the through hole 38a may not be provided in the bottom plate 38, and the light emitting element 184 may be disposed under the bottom plate 38 or the like.

光電元件136，如圖10所示，具有由光穿透構件構成的基材134、具有形成在其下面(光射出面)之多數個孔徑58a的遮光膜58、以及形成在基材134及遮光膜58下面的光電層60，與前述光電元件54同樣的構成。 As shown in FIG. 10, the photovoltaic element 136 has a substrate 134 composed of a light-transmitting member, a light-shielding film 58 having a plurality of apertures 58a formed on the lower surface (light-emitting surface), and a substrate 134 and a light-shielding layer. The photovoltaic layer 60 under the film 58 has the same configuration as the above-described photovoltaic element 54.

變形例1之曝光裝置，除光電光學單元117之其他部分之構成、及光電光學單元117以外之構成，與前述第1實施形態之曝光裝置相同。 The exposure apparatus of the first modification is the same as the exposure apparatus of the first embodiment except for the configuration of the other portions of the optoelectronic unit 117 and the configuration of the photo-optical unit 117.

光電元件136，可以未圖示之支承構件，在鏡筒104之內部被支承於既定位置，但亦可採用藉由未圖示之真空對應致動器，而能在XY平面內移動之構成。後者之情形時，發光元件184之各微型LED84a與光電元件136之孔徑58a可以是以1：1對應，但不限於此，亦可使微型LED84a之數量與孔徑58a之數量相異。亦即，可將較微型LED84a多之孔徑58a形成於遮光膜58，亦可將較微型LED84a少之數量之孔徑58a形成於遮光膜58。 The photovoltaic element 136 may be supported at a predetermined position inside the lens barrel 104 by a support member (not shown), but may be configured to be movable in the XY plane by a vacuum-corresponding actuator (not shown). In the latter case, the micro LEDs 84a of the light-emitting elements 184 and the apertures 58a of the photovoltaic elements 136 may correspond to 1:1, but are not limited thereto, and the number of the micro-LEDs 84a may be different from the number of the apertures 58a. That is, the aperture 58a of the micro LED 84a can be formed on the light shielding film 58 or A small number of apertures 58a of the micro LEDs 84a are formed in the light shielding film 58.

例如，可將較微型LED84a之列數少之孔徑58a之列形成於光電元件136之遮光膜58。此場合，微型LED84a之列中至少1列，可以作為備用之LED列。此場合，可構成為將來自LED列中之1個LED列、例如與備用LED列相鄰接之LED列中所含之1個微型LED84a之光束照射於光電元件54而生成之電子束，照射於標的物晶圓上之某一標的物區域(稱第1標的物區域)，例如將從備用LED列中所含之1個微型LED84a或主LED列中之其他LED列中所含之1個微型LED84a之光束照射於光電元件136而生成之電子束，可照射於晶圓上之第1標的物區域。亦即，可做成因來自不同LED列中分別所含之2個微型LED84a之光束之照射而於光電元件136生成之電子束重疊照射於晶圓上之同一標的物區域。據此，可使例如該標的物區域之劑量達到所欲狀態。 For example, a column of the apertures 58a having a smaller number of rows than the micro LEDs 84a can be formed on the light shielding film 58 of the photovoltaic element 136. In this case, at least one of the columns of the micro LEDs 84a can be used as a spare LED array. In this case, an electron beam generated by irradiating a light beam from one of the LED arrays, for example, one of the micro LEDs 84a included in the LED array adjacent to the standby LED array, to the photovoltaic element 54 may be used. A target area (referred to as the first target area) on the target wafer, for example, one micro LED 84a included in the standby LED array or one of the other LED columns in the main LED array The electron beam generated by the light beam of the micro LED 84a on the photovoltaic element 136 can be irradiated onto the first target region on the wafer. In other words, the electron beam generated by the photovoltaic element 136 due to the irradiation of the light beams from the two micro LEDs 84a included in the different LED columns can be overlapped and irradiated onto the same target region on the wafer. Accordingly, for example, the dose of the target region can be brought to a desired state.

例如，可將較微型LED84a之列數多之數量之孔徑58a之列形成於光電元件136之遮光膜58。此場合，孔徑58a之列中之至少1列，可作為備用孔徑列。在與通常使用之主孔徑列之孔徑58a對應之光電層60之一部分與其他部分相較產生經時惡化時等，可透過備用孔徑列於光電層60照射光束。此場合，可例如圖12所示，在光電元件136之遮光膜形成較主孔徑AP_j(j=1~J)之列多之數量之備用孔徑BP_i-j(i=1~4、j=1~J)之列。如此一來，在與主孔徑列AP_j之孔徑對應之光電層60之部分因壽命而無法使用之情形時等，可藉由使用備用孔徑BP_i-j之列，實質的延長光電層60之壽命。 For example, a column of a larger number of apertures 58a than the number of columns of the micro LEDs 84a can be formed on the light shielding film 58 of the photovoltaic element 136. In this case, at least one of the columns of the apertures 58a can be used as the spare aperture array. When a portion of the photovoltaic layer 60 corresponding to the aperture 58a of the main aperture row which is generally used is deteriorated with time by other portions, the light beam can be irradiated to the photovoltaic layer 60 through the spare aperture. In this case, for example, as shown in FIG. 12, the light-shielding film of the photovoltaic element 136 forms a plurality of spare apertures BP _ij (i=1~4, j=1) which are larger than the main aperture AP _j (j=1~J). ~J). As a result, when the portion of the photovoltaic layer 60 corresponding to the aperture of the main aperture row AP _j cannot be used due to the lifetime, the lifetime of the photovoltaic layer 60 can be substantially extended by using the spare aperture BP _ij .

無論如何，變形例1之曝光裝置，於發光元件184之複數個發光部84a產生之光束LB不透過空間射入對應之微透鏡，被轉換為平行光透過真空空間照射於光電元件136之基材134，並透過任一孔徑58a照射於光電層60。亦即，變形例1之曝光裝置，於發光元件184之複數個發光部84a產生之光束LB不透過氣體空間照射於光電層60。 In any case, in the exposure apparatus of the first modification, the light beam LB generated by the plurality of light-emitting portions 84a of the light-emitting element 184 is not transmitted through the space into the corresponding microlens, and is converted into a substrate through which the parallel light is transmitted through the vacuum space to the photovoltaic element 136. 134 is irradiated to the photovoltaic layer 60 through any of the apertures 58a. In other words, in the exposure apparatus according to the first modification, the light beam LB generated by the plurality of light-emitting portions 84a of the light-emitting element 184 is irradiated to the photovoltaic layer 60 without passing through the gas space.

又，當為了增加電子束光學系統之數量，而縮小鏡筒之直徑時，電子束光學系統之像面彎曲成分將變得顯著。例如電子束光學系統作為其像差而具有如圖13中以示意方式所示之像面彎曲的情形時，如圖13之示意，可使光電層60(正確而言，係光電元件136之整體)撓曲，以使和像面之彎曲成分成相反相為之彎曲產生於光電層60，亦即可使光電層60之電子放射面彎曲(可使之成為非平面)。如此，即能補償電子束光學系統70之像面彎曲之至少一部分，抑制因像面彎曲引起之電子束像之位置偏移、模糊(散焦)等。此外，亦可使光電層60之電子放射面之彎曲量為可變。例如，可視電子束光學系統70之光學特性(像差、例如像面彎曲)之變化，改變電子放射面之彎曲量。因此，可分別視對應之電子束光學系統70之光學特性，在複數個光電元件136彼此間使電子放射面之彎曲量相異。又，圖13中，雖係顯示使光電層60產生往+Z方向(朝向發光元件84)凸之彎曲時之例，但此係由於假設電子束光學系統作為其像差具有往-Z方向凸之像面彎曲，而對光電層60賦予為了抵消或降低此像面彎曲之影響的彎曲。因此，若電子束光學系統作為其像差具有往+Z方向凸之像面彎曲之情形時，必須使光電層60產生往-Z方向凸之彎曲。 Further, when the diameter of the lens barrel is reduced in order to increase the number of electron beam optical systems, the curvature of field of the electron beam optical system becomes remarkable. For example, when the electron beam optical system has its image aberration as shown in Fig. 13 as its aberration, as shown in Fig. 13, the photovoltaic layer 60 can be made (correctly, the entirety of the photovoltaic element 136). The deflection is such that the curved component of the image plane is bent in the opposite phase to be generated in the photovoltaic layer 60, and the electron emission surface of the photovoltaic layer 60 can be bent (making it non-planar). Thus, at least a part of the curvature of field of the electron beam optical system 70 can be compensated for, and positional shift, blur (defocus), and the like of the electron beam image due to curvature of the image plane can be suppressed. Further, the amount of warpage of the electron emission surface of the photovoltaic layer 60 can be made variable. For example, the change in optical characteristics (aberration, for example, curvature of field) of the visible electron beam optical system 70 changes the amount of bending of the electron emitting surface. Therefore, depending on the optical characteristics of the corresponding electron beam optical system 70, the amount of bending of the electron emitting surface can be made different between the plurality of photovoltaic elements 136. Further, in Fig. 13, although the case where the photovoltaic layer 60 is bent in the +Z direction (toward the light-emitting element 84) is shown, it is assumed that the electron beam optical system has a convexity toward the -Z direction as its aberration. The image plane is curved, and the photovoltaic layer 60 is given a curvature for canceling or reducing the influence of the curvature of field. Therefore, if the electron beam optical system has a case where the aberration has an image plane convex in the +Z direction, it is necessary to cause the photovoltaic layer 60 to be convexly curved in the -Z direction.

又，本變形例之曝光裝置與前述曝光裝置100同樣的，亦是採用於X軸方向長之矩形曝光場，因此如圖13中以短雙箭頭所示，即使是1方向之彎曲(繞一軸之彎曲、亦即於X軸方向之彎曲、在XZ剖面內之彎曲)效果亦高。此外，不僅是使光電元件136(光電層60)往1方向彎曲，當然亦可使4角往下方撓曲等之3維變形。藉由改變光電元件136之變形方式，即能有效抑制因球面像差引起之光學圖案像之位置偏移、變形等。當使光電層60之電子放射面彎曲時，該電子放射面之一部分(例如中央部)與其他部分(例如周邊部)之間，於電子束光學系統70之光軸Axe之方向，位置將互異。 Further, the exposure apparatus of the present modification is similar to the exposure apparatus 100 described above, and is also a rectangular exposure field that is long in the X-axis direction. Therefore, as shown by short double arrows in FIG. 13, even a one-direction bending (around one axis) The bending, that is, the bending in the X-axis direction and the bending in the XZ cross section, is also effective. Further, not only the photoelectric element 136 (photoelectric layer 60) is bent in one direction, but also three-dimensional deformation such as bending of the four corners downward may be performed. By changing the deformation mode of the photovoltaic element 136, positional shift, deformation, and the like of the optical pattern image due to spherical aberration can be effectively suppressed. When the electron emission surface of the photovoltaic layer 60 is bent, a position (for example, a central portion) of the electron emission surface and another portion (for example, a peripheral portion) are in the direction of the optical axis Axe of the electron beam optical system 70, and the positions are mutually different.

此外，亦可使光電層60之厚度具有分布，以使電子放射面之一部分(例如中央部)與其他部分(例如周邊部)之光軸AXe之方向之位置相異。又，在發光元件84與光電元件54係一體形成之情形時，亦可使電子放射面彎曲。 In addition, the thickness of the photovoltaic layer 60 can also be distributed so that one of the electron emitting surfaces The position of the portion (for example, the central portion) is different from the position of the optical axis AXe of other portions (for example, the peripheral portion). Further, when the light-emitting element 84 and the photovoltaic element 54 are integrally formed, the electron emission surface can be curved.

又，光電元件136，與光電元件54同樣的，在孔徑是與光電層一體設置、亦即是所謂的孔徑一體型之光電元件可藉由致動器在XY平面內移動之情形時，例如，作為孔徑一體型光電元件，可使用如圖14所示之每隔1列形成有節距a之孔徑58a之列、與節距b之孔徑58b之列的多節距型孔徑一體型光電元件136a。不過，此場合，最好是設定為能將從發光元件184射出之光束之尺寸、形狀，藉由使孔徑一體型光電元件136a例如僅移動於Y軸方向，即能將光束切換照射於節距為a之孔徑58a之列與節距為b之孔徑58b之列。又，無需使微型LED(發光部)84a之配置與孔徑58a及孔徑58b之配置一定要對應，重要的是在切換前後之任一狀態下，複數個光束(雷射束)之各個能照射在包含對應之孔徑58a或孔徑58b之光電元件136a上之區域即可。圖14之例中，例如使用同圖中所示配置之複數個光束LB即可。 Further, the photovoltaic element 136 is similar to the photovoltaic element 54 in that the aperture is formed integrally with the photoelectric layer, that is, the so-called aperture-integrated photoelectric element can be moved by the actuator in the XY plane, for example, As the aperture-integrated photoelectric element, a multi-pitch type aperture-integrated photoelectric element 136a in which a column of the apertures 58a of the pitch a and a diameter of the apertures 58b of the pitch b are formed in every other row as shown in FIG. 14 can be used. . However, in this case, it is preferable to set the size and shape of the light beam emitted from the light-emitting element 184, and to switch the light beam to the pitch by moving the aperture-integrated photoelectric element 136a, for example, only in the Y-axis direction. It is a column of aperture 58a of a and a diameter 58b of pitch b. Further, it is not necessary to make the arrangement of the micro LEDs (light emitting portions) 84a correspond to the arrangement of the apertures 58a and the apertures 58b. It is important that each of the plurality of light beams (laser beams) can be irradiated in any of the states before and after the switching. The area on the photovoltaic element 136a including the corresponding aperture 58a or aperture 58b may be included. In the example of Fig. 14, for example, a plurality of light beams LB arranged as shown in the figure may be used.

又，亦可將節距互異之3種類以上孔徑之列形成在光電元件136a之遮光膜58上，藉由和上述相同順序進行曝光，而能對應3個以上節距之切割圖案之形成。 Further, three or more types of apertures having different pitches may be formed on the light-shielding film 58 of the photovoltaic element 136a, and exposure may be performed in the same order as described above, so that the formation of a cut pattern of three or more pitches can be performed.

又，前述第1實施形態之曝光裝置100之情形時，不僅是構成光束照射裝置80之光電元件54之孔徑，藉由將發光元件84之微型LED84a與圖14中之複數個孔徑(58a或58b)同樣的、且以1對1之對應配置，即能對應多節距之切割圖案之形成。此場合，藉由切換為on之微型LED84a，可形成多節距之切割圖案。 Further, in the case of the exposure apparatus 100 of the first embodiment, not only the aperture of the photo-electric element 54 constituting the beam irradiation device 80 but also the plurality of apertures (58a or 58b) of the micro-LED 84a of the light-emitting element 84 and FIG. The same, and configured in a one-to-one correspondence, can form a multi-pitch cutting pattern. In this case, a multi-pitch cutting pattern can be formed by switching to the on-micro LED 84a.

《第1實施形態之變形例2》 "Modification 2 of the first embodiment"

接著，說明使用圖10所示之分離型光束照射裝置180之變形例2之曝光裝置。 Next, an exposure apparatus using Modification 2 of the separation type beam irradiation device 180 shown in FIG. 10 will be described. Set.

圖15中顯示了構成變形例2之曝光裝置所具備之光學系統18之45個光電光學單元217中之1個。 Fig. 15 shows one of the 45 photoelectron units 217 constituting the optical system 18 included in the exposure apparatus of the second modification.

光電光學單元217，於底板38取代前述各貫通孔38a而形成具有如圖15所示之梯部的貫通孔38b，於該貫通孔38b從上方將光穿透構件82以其上端面與底板38成同一面之狀態加以安裝。此場合，光穿透構件82之底面及側面與梯部之上面及內面實質接觸，藉由光穿透構件82構成真空間隔壁。亦即，藉由光穿透構件(以下，稱真空間隔壁)82將貫通孔38b加以封閉。發光元件184係配置在真空間隔壁82外部之大氣壓環境下(或較大氣壓略為陽壓之環境下)、亦即配置在氣體空間內。於鏡筒104內部之上端部近旁，在真空間隔壁82之下方透過既定間隙配置有光電元件136。 The photoelectric optical unit 217 forms a through hole 38b having a step portion as shown in FIG. 15 in place of the above-described through holes 38a in the bottom plate 38, and the light penetrating member 82 is provided with the upper end surface and the bottom plate 38 from above through the through hole 38b. Installed in the same state. In this case, the bottom surface and the side surface of the light-transmitting member 82 are in substantial contact with the upper surface and the inner surface of the ladder portion, and the light-permeable member 82 constitutes a vacuum partition wall. That is, the through hole 38b is closed by a light penetrating member (hereinafter referred to as a vacuum partition wall) 82. The light-emitting element 184 is disposed in an atmospheric pressure environment outside the vacuum partition wall 82 (or an environment in which the atmospheric pressure is slightly positive), that is, in the gas space. In the vicinity of the upper end portion inside the lens barrel 104, a photovoltaic element 136 is disposed below a vacuum partition wall 82 through a predetermined gap.

本變形例2之曝光裝置，除光電光學單元217之其他部分之構成、及光電光學單元217以外之構成，與前述第1實施形態之曝光裝置相同。 The exposure apparatus of the second modification is the same as the exposure apparatus of the first embodiment except for the configuration of the other portions of the photoelectric optical unit 217 and the configuration of the photoelectric optical unit 217.

本變形例2之曝光裝置，在真空環境下之光電元件136係藉由未圖示之支承構件在鏡筒104內部被支承於既定位置。 In the exposure apparatus according to the second modification, the photovoltaic element 136 in a vacuum environment is supported at a predetermined position inside the lens barrel 104 by a support member (not shown).

本變形例2之曝光裝置，以發光元件184之複數個發光部84a產生之光束LB不透過空間射入對應之微透鏡，被轉換成平行光後依序透過氣體空間、真空間隔壁82及真空空間照射於光電元件136之基材134，透過任一孔徑58a照射於光電層60。 In the exposure apparatus according to the second modification, the light beam LB generated by the plurality of light-emitting portions 84a of the light-emitting element 184 is incident on the corresponding microlens without being transmitted through the space, converted into parallel light, and sequentially transmitted through the gas space, the vacuum partition wall 82, and the vacuum. The space is irradiated onto the substrate 134 of the photovoltaic element 136, and is irradiated to the photovoltaic layer 60 through any of the apertures 58a.

本變形例2之曝光裝置，基本上，可獲得與變形例1之曝光裝置同等之效果。 In the exposure apparatus of the second modification, basically, the same effects as those of the exposure apparatus of the first modification can be obtained.

本變形例2之曝光裝置，可將處於大氣壓環境下之發光元件184構成為可動。在需要多節距之切割圖案之情形時，例如使用孔徑一體型光電元件136a，並藉由使發光元件184往Y軸方向移動，將光束切換照射於節距為a之孔徑58a之列與節距為b之孔徑58b之列。又，光電元件136a可以是能移動的。 In the exposure apparatus of the second modification, the light-emitting element 184 in an atmospheric pressure environment can be configured to be movable. In the case where a multi-pitch cutting pattern is required, for example, the aperture-integrated photoelectric element 136a is used, and by moving the light-emitting element 184 in the Y-axis direction, the beam is switched to be irradiated to a pitch of a. The array of apertures 58a and the aperture 58b of pitch b are listed. Also, the optoelectronic component 136a can be movable.

《第1實施形態之變形例3》 "Modification 3 of First Embodiment"

接著，說明使用圖10所示之分離型光束照射裝置180之變形例3之曝光裝置。 Next, an exposure apparatus using Modification 3 of the separation type beam irradiation device 180 shown in Fig. 10 will be described.

圖16中，顯示了構成變形例3之曝光裝置所具備之光學系統18之45個光電光學單元317中之1個。 In Fig. 16, one of the 45 photoelectric optical units 317 of the optical system 18 included in the exposure apparatus of the third modification is shown.

光電光學單元317，於底板38取代前述各貫通孔38a形成有貫通孔38c，於該貫通孔38c安裝有光電元件136。此場合，光電元件136兼作為真空間隔壁。發光元件184係配置在真空間隔壁、亦即光電元件136外部之大氣壓環境下(或較大氣壓略為陽壓之環境下)，亦即配置在氣體空間內。 In the optoelectronic unit 317, a through hole 38c is formed in the bottom plate 38 instead of the through holes 38a, and the photoelectric element 136 is attached to the through hole 38c. In this case, the photovoltaic element 136 also serves as a vacuum partition . The light-emitting element 184 is disposed in a vacuum barrier, that is, in an atmospheric environment outside the photovoltaic element 136 (or an environment in which the atmospheric pressure is slightly positive), that is, disposed in the gas space.

本變形例3之曝光裝置，除光電光學單元317之其他部分之構成、及光電光學單元317以外之構成，與前述變形例2之曝光裝置相同。 The exposure apparatus of the third modification is the same as the exposure apparatus of the second modification except for the configuration of the other portions of the photoelectric optical unit 317 and the configuration of the photoelectric optical unit 317.

本變形例3之曝光裝置，以發光元件184之複數個發光部84a產生之光束LB不透過空間射入對應之微透鏡，被轉換成平行光後透過氣體空間照射於光電元件136之基材134，透過任一孔徑58a且不透過空間照射於光電層60。亦即，於本變形例3之曝光裝置，以發光元件184之複數個發光部84a產生之光束LB僅透過氣體空間、換言之不透過真空空間照射於光電層60。 In the exposure apparatus according to the third modification, the light beam LB generated by the plurality of light-emitting portions 84a of the light-emitting element 184 is incident on the corresponding microlens without being transmitted through the space, converted into parallel light, and then transmitted through the gas space to the substrate 134 of the photovoltaic element 136. The photovoltaic layer 60 is irradiated through any of the apertures 58a and without a transmission space. That is, in the exposure apparatus according to the third modification, the light beam LB generated by the plurality of light-emitting portions 84a of the light-emitting element 184 is transmitted only through the gas space, in other words, through the vacuum space, to the photovoltaic layer 60.

本變形例3之曝光裝置，可獲得與變形例2之曝光裝置同等之效果。又，如本變形例3般，在光電元件兼作為真空間隔壁之情形時，亦可使光電層60之電子放射面彎曲(可做成非平面)。 In the exposure apparatus of the third modification, the same effects as those of the exposure apparatus of the second modification can be obtained. Further, as in the case of the third modification, when the photovoltaic element is also used as the vacuum partition wall, the electron emission surface of the photovoltaic layer 60 may be curved (non-planar).

於上述第1實施形態及其變形例1、2、3，雖係透過孔徑(58、58a、58b)對光電層60照射光，但亦可不使用孔徑。 In the above-described first embodiment and its modifications 1, 2, and 3, the photovoltaic layer 60 is irradiated with light through the apertures (58, 58a, 58b), but the aperture may not be used.

例如圖17(A)所示，若能以發光元件產生具有所欲剖面形狀之光束之情形時，以可將來自發光元件之光束不透過孔徑照射於光電元件，以光電元件轉換為電子像縮小成像於晶圓面上。 For example, as shown in FIG. 17(A), when a light beam having a desired cross-sectional shape can be generated by the light-emitting element, the light beam from the light-emitting element can be irradiated to the photovoltaic element without the aperture. The photoelectric element is converted into an electronic image to be imaged on the wafer surface.

於上述第1實施形態及其變形例1、2、3，如圖17(B)所示，係透過複數個孔徑將光照射於光電層。如以上所述藉由孔徑之使用，可使具有所欲剖面形狀之光束射入光電層。 In the above-described first embodiment and its modifications 1, 2, and 3, as shown in Fig. 17(B), light is irradiated onto the photovoltaic layer through a plurality of apertures. By using the aperture as described above, a light beam having a desired cross-sectional shape can be incident on the photovoltaic layer.

又，於上述分離型光束照射裝置180，在複數個發光部(微型LED)84a與包含光電層60之光電元件136間之光路上配置之複數個光學構件(光學元件)係微透鏡陣列84c之構成元件的微透鏡。然而，在複數個發光部(微型LED)84a與光電層60間之光路上配置之複數個光學元件，不限於此。亦即，在複數個發光部(微型LED)84a與光電層60間之光路上，可以配置彼此在物理上分離之複數個光學構件、例如透鏡。此外，發光部之數量(發光之發光部數量)與射入光電元件之光束數量可以不同。 Further, in the separation type beam irradiation device 180, a plurality of optical members (optical elements) disposed on an optical path between a plurality of light-emitting portions (micro LEDs) 84a and a photovoltaic element 136 including the photovoltaic layer 60 are microlens arrays 84c. A microlens that constitutes an element. However, the plurality of optical elements disposed on the optical path between the plurality of light-emitting portions (micro LEDs) 84a and the photovoltaic layer 60 are not limited thereto. That is, a plurality of optical members, such as lenses, physically separated from each other, may be disposed on an optical path between the plurality of light-emitting portions (micro LEDs) 84a and the photovoltaic layer 60. Further, the number of light-emitting portions (the number of light-emitting portions that emit light) may be different from the number of light beams that are incident on the photovoltaic element.

又，於光束照射裝置180，係由微透鏡陣列84c構成發光元件184之一部分，但不限於此，前述自發光型對比元件陣列84與複數個光學構件(光學元件)，可以是在光軸AXe之方向(Z軸方向)分離。 Further, in the beam irradiation device 180, the microlens array 84c constitutes a part of the light-emitting element 184, but is not limited thereto, and the self-luminous type contrast element array 84 and the plurality of optical members (optical elements) may be on the optical axis AXe. The direction (Z-axis direction) is separated.

又，如前述第1實施形態之曝光裝置100所使用之光束照射裝置80般，於複數個發光部84a(發光元件84)與光電層60一體之一體型光束照射裝置、亦即廣義的光電元件，亦可具有配置在複數個發光部(微型LED)84a與光電層60間之光路上，在與電子束光學系統之光軸交叉之方向、例如正交之方向並置之複數個光學構件(光學元件)。此場合，於複數個光學構件之各個，來自複數個發光部中至少1個發光部之光束不透過空間射入。 In the same manner as the light beam irradiation device 80 used in the exposure apparatus 100 of the first embodiment, the plurality of light-emitting portions 84a (light-emitting elements 84) and the photovoltaic layer 60 are integrated as a single-body beam irradiation device, that is, a generalized photoelectric device. Or a plurality of optical members (optical) disposed on an optical path between the plurality of light-emitting portions (micro LEDs) 84a and the photoelectric layer 60 in a direction intersecting with an optical axis of the electron beam optical system, for example, an orthogonal direction (optical) element). In this case, light beams from at least one of the plurality of light-emitting portions are not transmitted through the space in each of the plurality of optical members.

以上之敘述中雖未特別說明，但因光電層60具有某種程度之面積，因此無法保證其面內之光電轉換效率均勻，光電層60具有光電轉換效率之面內分布是較實際的。因此，可視光電層60之光電轉換效率之面內分布，進行照射於光電元件之光束強度之調整。亦即，假設光電層60具有第1光電轉換效率之第1部分與第2光電轉換效率之第2部分時，可根據第1光電轉換效率及第2光電轉換效率之各個，調整設於第1部分之光束之強度及照射於第2部分之光束之強度。或者，以補償第1光電轉換效率與第2光電轉換效率之差異之方式，調整照射於第1部分之光束強度與照射於第2部分之光束強度。 Although not described in the above description, since the photovoltaic layer 60 has a certain area, it is not possible to ensure uniform photoelectric conversion efficiency in the plane, and it is practical to have the in-plane distribution of the photoelectric conversion efficiency of the photovoltaic layer 60. Therefore, the in-plane distribution of the photoelectric conversion efficiency of the photovoltaic layer 60 is adjusted to adjust the intensity of the light beam irradiated to the photovoltaic element. That is, it is assumed that the photovoltaic layer 60 has the first photoelectric conversion effect. When the first part of the first part and the second part of the second photoelectric conversion efficiency are used, the intensity of the light beam provided in the first portion and the second portion can be adjusted according to the first photoelectric conversion efficiency and the second photoelectric conversion efficiency. The intensity of the beam. Alternatively, the beam intensity irradiated to the first portion and the intensity of the beam irradiated to the second portion are adjusted so as to compensate for the difference between the first photoelectric conversion efficiency and the second photoelectric conversion efficiency.

上述第1實施形態及其變形例1、2、3中，可將設於發光元件之光學元件(例如微透鏡陣列)設於光電元件。此外，於第1實施形態之變形例1、變形例2或變形例3之曝光裝置中，可取代孔徑一體型光電元件136，使用孔徑板(孔徑構件)與光電元件不同體、亦即所謂的孔徑不同體型光電元件。圖18(A)所示之孔徑不同體型光電元件138，包含：在基材134下面(光射出面)形成光電層60所構成的光電元件140、與在光電元件140之基材134上方(光射入面側)由形成有以例如1μ以下之既定間隙(clearance、gap)配置之多數個孔徑58a之遮光構件構成的孔徑板142。 In the above-described first embodiment and its modifications 1, 2, and 3, an optical element (for example, a microlens array) provided in the light-emitting element can be provided in the photovoltaic element. Further, in the exposure apparatus according to the first modification, the second modification, or the third modification of the first embodiment, instead of the aperture-integrated photoelectric element 136, an aperture plate (aperture member) and a photoelectric element are different, that is, a so-called Optoelectronic components with different apertures. The aperture-shaped different-type photovoltaic element 138 shown in FIG. 18(A) includes a photovoltaic element 140 formed by forming a photovoltaic layer 60 under the substrate 134 (light exit surface), and a substrate 134 above the photovoltaic element 140 (light) The entrance surface side is an aperture plate 142 formed of a light shielding member having a plurality of apertures 58a arranged at a predetermined clearance (gap) of, for example, 1 μ or less.

使用孔徑不同體型光電元件之情形時，可設置能使孔徑板142在XY平面內移動之驅動機構。此場合，將與前述孔徑一體型光電元件136a相同之多節距型之孔徑形成於孔徑板142，並使用將孔徑板142在不脫離光電元件140之範圍移動之功能，即能以和前述相同順序，形成節距相異之線圖案之切斷用切割圖案。亦可再加上能使光電元件140在XY平面內移動之驅動機構。此場合，可取代使孔徑板142移動，而使光電元件140與孔徑板142在維持兩者之位置關係之狀態下移動。又，此場合，亦可例如僅移動光電元件140及孔徑板142中之一方，以錯開孔徑板142與光電元件140在XY平面內之相對位置。如此，能謀求光電層60之長壽命化。此外，亦可做成相對孔徑板142使發光元件184能在XY平面內移動。再者，孔徑板142不僅是在XY平面內移動，亦可做成能在與光軸AXe平行之Z軸方向移動、或相對XY平面傾斜、或能繞與光軸AXe平行之Z軸旋轉，此外，光電元件140與孔徑板142間之間隙可做成能調整。 In the case where a different aperture type photovoltaic element is used, a drive mechanism capable of moving the aperture plate 142 in the XY plane can be provided. In this case, a multi-pitch type aperture similar to the above-described aperture-integrated photoelectric element 136a is formed in the aperture plate 142, and the function of moving the aperture plate 142 without departing from the range of the photoelectric element 140 can be the same as described above. In the order, a cutting pattern for cutting a line pattern having different pitches is formed. A drive mechanism that can move the photovoltaic element 140 in the XY plane can also be added. In this case, instead of moving the aperture plate 142, the photoelectric element 140 and the aperture plate 142 are moved in a state in which the positional relationship therebetween is maintained. Further, in this case, for example, only one of the photovoltaic element 140 and the aperture plate 142 may be moved to shift the relative position of the aperture plate 142 and the photoelectric element 140 in the XY plane. In this way, the long life of the photovoltaic layer 60 can be achieved. In addition, the relative aperture plate 142 can also be configured to move the light-emitting element 184 in the XY plane. Furthermore, the aperture plate 142 is not only moved in the XY plane, but also can be moved in the Z-axis direction parallel to the optical axis AXe, or inclined with respect to the XY plane, or can be rotated about the Z-axis parallel to the optical axis AXe. In addition, the gap between the photovoltaic element 140 and the aperture plate 142 can be adjusted.

又，使用孔徑不同體型光電元件之情形時，可僅設置使光電元件140移動之驅動機構。此場合，亦可藉由使光電元件140在XY平面內移動，據以謀求光電層60之長壽命化。 Further, in the case of using a different type of photovoltaic element having a different aperture, only a driving mechanism for moving the photoelectric element 140 can be provided. In this case, it is also possible to increase the life of the photovoltaic layer 60 by moving the photovoltaic element 140 in the XY plane.

又，亦可並用上述孔徑板之孔徑與光電元件之孔徑。亦即，可在前述孔徑一體型光電元件之光束射入側配置孔徑板，使透過孔徑板之孔徑之光束透過孔徑一體型光電元件之孔徑射入光電層。 Further, the aperture of the aperture plate and the aperture of the photoelectric element may be used in combination. In other words, the aperture plate can be disposed on the beam incident side of the aperture-integrated photoelectric element, and the beam passing through the aperture of the aperture plate can be incident on the photovoltaic layer through the aperture of the aperture-integrated photoelectric element.

又，在節距相異之線圖案切斷用之切割圖案之形成時，若是使用上述孔徑不同體型光電元件，可更換孔徑板。 Further, when the cutting pattern for cutting the line pattern having different pitches is formed, the aperture plate can be replaced by using the above-described aperture type different type of photovoltaic element.

又，使用上述孔徑不同體型光電元件之情形時，可取代孔徑板，使用穿透型液晶元件等之空間光調變器來形成複數個孔徑。 Further, when the above-described aperture type different type of photovoltaic element is used, a plurality of apertures can be formed by using a spatial light modulator such as a transmissive liquid crystal element instead of the aperture plate.

又，作為孔徑一體型光電元件，不限於圖10所示之型式，亦可例如圖19(A)所示，於圖10之光電元件136中，使用孔徑58a內之空間被光穿透膜148填埋之型式的光電元件136b。光電元件136b中，可取代光穿透膜148，而由基材134之一部分填埋孔徑58a內之空間。 Further, the aperture-integrated photoelectric element is not limited to the type shown in Fig. 10. For example, as shown in Fig. 19(A), in the photovoltaic element 136 of Fig. 10, the space in the aperture 58a is used to penetrate the film 148. A buried type of photovoltaic element 136b. In the photovoltaic element 136b, instead of the light penetrating film 148, a space in the aperture 58a is partially filled by one of the substrates 134.

除此之外，如圖19(B)所示，亦可使用在基材134上面(光射入面)藉由鉻之蒸鍍形成具有孔徑58a之遮光膜58、在基材134下面(光射出面)形成有光電層60之型式的光電元件136c，或如圖19(C)所示，使用於圖19(B)之光電元件136c中，孔徑58a內之空間被光穿透膜148填埋之型式的光電元件136d。 In addition, as shown in FIG. 19(B), a light-shielding film 58 having an aperture 58a may be formed on the substrate 134 (light incident surface) by evaporation of chromium, under the substrate 134 (light) The exit surface is formed of a photovoltaic element 136c of the type of the photovoltaic layer 60, or as shown in Fig. 19(C), used in the photovoltaic element 136c of Fig. 19(B), and the space in the aperture 58a is filled by the light transmissive film 148. A buried type of photovoltaic element 136d.

除此之外，亦有一種如圖19(D)所示，在基材134下面形成光電層60、於光電層60下面形成有具孔徑58a之鉻膜58之型式的光電元件136e。又，圖19(D)之鉻膜58，亦具有非遮蔽光、而是遮蔽電子之功能。 In addition to this, as shown in Fig. 19(D), a photovoltaic element 60 having a photovoltaic layer 60 formed under the substrate 134 and a chromium film 58 having a hole diameter 58a formed under the photovoltaic layer 60 is also formed. Further, the chrome film 58 of Fig. 19(D) also has a function of shielding electrons without shielding light.

以上所說明之孔徑一體型光電元件136、136a、136b、136c、136d、136e之任一種中，亦可將基材134非僅以石英、而是由石英與光穿透膜 (單層或多層)之積層體構成。 In any of the aperture-integrated photovoltaic elements 136, 136a, 136b, 136c, 136d, and 136e described above, the substrate 134 may be made of quartz and light-transmissive film instead of only quartz. A laminate of (single or multiple layers).

又，為了將孔徑不同體型光電元件與例如圖18(A)所示之光電元件140一起構成，可與光電元件140一起使用之孔徑板，不限於如孔徑板142般僅由具有孔徑之遮光構件構成者，亦可使用基材與遮光膜一體之孔徑板。作為此種型式之孔徑板，可使用例如圖18(B)所示之例如在由石英構成之基材144下面(光射出面)藉由鉻之蒸鍍形成具有孔徑58a之遮光膜58的孔徑板142a、或如圖18(C)所示之以由石英構成之板構件146與光穿透膜148構成之基材150與在此基材150下面(光射出面)藉由鉻之蒸鍍形成有孔徑58a之遮光膜58的孔徑板142b、或如圖18(D)所示之於孔徑板142a中孔徑58a內之空間被光穿透膜148填埋的孔徑板142c、或如圖18(E)所示之於孔徑板142a中孔徑58a內之空間被基材144之一部分填埋的孔徑板142d。又，孔徑板142、142a、142b、142c、142d皆可上下反轉使用。 Further, in order to form a photovoltaic element having a different aperture diameter together with, for example, the photovoltaic element 140 shown in FIG. 18(A), the aperture plate which can be used together with the photovoltaic element 140 is not limited to the light-shielding member having the aperture only as the aperture plate 142. As the constituent, an aperture plate in which the base material and the light shielding film are integrated may be used. As the aperture plate of this type, for example, the aperture of the light-shielding film 58 having the aperture 58a formed by evaporation of chromium, for example, under the substrate 144 made of quartz (light exit surface) as shown in Fig. 18(B) can be used. The plate 142a, or the substrate 150 composed of a plate member 146 and a light-transmissive film 148 made of quartz as shown in FIG. 18(C) and the vapor-deposited surface of the substrate 150 (light exit surface) by chromium The aperture plate 142b formed with the light shielding film 58 of the aperture 58a, or the aperture plate 142c which is filled in the aperture 58a of the aperture plate 142a by the light transmission film 148 as shown in Fig. 18(D), or as shown in Fig. 18 (E) is shown in the aperture plate 142d in which the space in the aperture 58a of the aperture plate 142a is partially filled by one of the substrates 144. Further, the aperture plates 142, 142a, 142b, 142c, and 142d can be used upside down.

又，以上所說明之光電元件54、136、136a~136e及孔徑板142、142a~142d之複數個孔徑58a，可以是全部為相同尺寸、相同形狀，但複數個孔徑58a所有之尺寸可以不同、所有孔徑58a之形狀亦可不同。重要的是，孔徑58a之尺寸較其對應之光束之尺寸小至對應之光束可照射到其全域即可。 Further, the plurality of apertures 58a of the photovoltaic elements 54, 136, 136a to 136e and the aperture plates 142 and 142a to 142d described above may all be the same size and the same shape, but the plurality of apertures 58a may have different sizes. The shape of all apertures 58a can also vary. What is important is that the size of the aperture 58a is smaller than the size of its corresponding beam so that the corresponding beam can illuminate its entirety.

又，在上述第1實施形態之變形例1或變形例2之孔徑一體型光電元件是能在XY平面內移動之情形時，可在該孔徑一體型光電元件安裝接受來自發光元件之光束以檢測其強度之感測器。例如圖11及圖15所示，可構成為在光電元件136之基材上面之一端部設置感測器135，藉由以致動器使光電元件136移動，據以使感測器135能移動至XY平面內之所欲位置。此外，例如在具備能於XY平面內移動之前述孔徑板142之情形時，可於該孔徑板安裝感測器。 Further, when the aperture-integrated photoelectric element according to the first modification or the second modification of the first embodiment is movable in the XY plane, the light beam from the light-emitting element can be mounted and received by the aperture-integrated photoelectric element to be detected. Its intensity sensor. For example, as shown in FIG. 11 and FIG. 15, a sensor 135 may be disposed at one end of the substrate of the photovoltaic element 136, and the photoelectric element 136 is moved by an actuator, so that the sensor 135 can be moved to The desired position in the XY plane. Further, for example, in the case where the aforementioned aperture plate 142 capable of moving in the XY plane is provided, the sensor can be mounted on the aperture plate.

又，以上，雖係針對光束照射裝置(80或180)，將具有複數個對半導體基板於垂直方向射出光之發光部、例如放射二極體、VCSEL或 VECSEL等之自發光型對比元件陣列，作為發光元件裝備之情形做了說明，但不限於此，亦可如下述變形例4般，將具有複數個對半導體基板平行的射出光之發光部之自發光型對比元件陣列，用作為發光元件來構成光束照射裝置。 Further, in the above, the light beam irradiation device (80 or 180) has a plurality of light-emitting portions that emit light to the semiconductor substrate in the vertical direction, for example, a radiation diode, a VCSEL, or The self-luminous type contrast element array of VECSEL or the like is described as a case where the light-emitting element is equipped. However, the present invention is not limited thereto, and a light-emitting portion having a plurality of light beams that are parallel to the semiconductor substrate may be used as in the fourth modification described below. The light-emitting contrast element array is used as a light-emitting element to constitute a light beam irradiation device.

《第1實施形態之變形例4》 "Modification 4 of the first embodiment"

圖20中顯示了構成變形例4之曝光裝置所具備之光學系統18之45個光電光學單元417中之1個。 FIG. 20 shows one of the 45 photo-optical units 417 constituting the optical system 18 included in the exposure apparatus of the fourth modification.

光電光學單元417，取代前述光束照射裝置80，而將光束照射裝置280***底板38之貫通孔38a。於光電光學單元417，光束照射裝置280亦兼作為將鏡筒104內部與外部加以隔離之真空間隔壁。 The photoelectric optical unit 417 is inserted into the through hole 38a of the bottom plate 38 instead of the light beam irradiation device 80 described above. In the optoelectronic unit 417, the beam irradiation device 280 also serves as a vacuum partition that isolates the inside and the outside of the barrel 104.

光束照射裝置280，如圖21中放大所示，係將以自發光型對比元件陣列為主體之發光元件284與光電元件54加以一體化之物。以下，使用與發光元件284相同之符號，適當的稱為自發光型對比元件陣列284。自發光型對比元件陣列284，作為發光部，具有：製作在半導體基板上、具有配置成XY2維陣列狀之雙異質構造的複數個光子結晶雷射(以下，適當的稱光子雷射)284a、與個別驅動複數個光子雷射284a的複數個CMOS驅動電路284b。 The light beam irradiation device 280, as shown enlarged in Fig. 21, integrates the light-emitting element 284 and the photovoltaic element 54 mainly composed of the self-luminous type contrast element array. Hereinafter, the same reference numerals as those of the light-emitting element 284 are used, which are appropriately referred to as a self-luminous type contrast element array 284. The self-luminous type contrast element array 284 includes, as a light-emitting portion, a plurality of photon crystal lasers (hereinafter, appropriately referred to as photon lasers) 284a having a double heterostructure arranged in an XY two-dimensional array on a semiconductor substrate. And a plurality of CMOS driving circuits 284b that individually drive a plurality of photon lasers 284a.

光子雷射，由於係在半導體基板內部在與基板之面平行之方向射出光束LB之端面發光雷射，因此為了用於自發光型對比元件陣列284，需將該光束LB取出至面外。作為此取出方法，較為人知的有在光導波路之末端部形成平面繞射光柵型結合器的方法(為方便起見，稱方法1)、於光導波路末端部之前端形成斜向反射鏡以將光反射至與基板之面垂直之方向的方法(為方便起見，稱方法2)、以及例如使矽細線光導波路本身往上方彎曲成立體的方法(為方便起見，稱方法3)等。 Since the photon laser emits laser light from the end face of the light beam LB in a direction parallel to the surface of the substrate inside the semiconductor substrate, the light beam LB needs to be taken out of the surface for use in the self-luminous type contrast element array 284. As a method of extracting, a method of forming a planar diffraction grating type combiner at a distal end portion of an optical waveguide (refer to method 1 for convenience) is formed, and a diagonal mirror is formed at a front end of an end portion of the optical waveguide to A method in which light is reflected to a direction perpendicular to a surface of a substrate (refer to Method 2 for convenience), and a method of bending a thin-line optical waveguide itself upward, for example, for convenience (refer to Method 3 for convenience) .

可採用上述3個方法中之任一種方法。於本實施形態，係採用方法3。其理由在於，方法3，不會有方法1之波長頻帶之限制、亦不會有方法2之因光導波路端與反射鏡間之空間引起之結合損失之増大的問題，是非常佳的方法。 Any of the above three methods can be employed. In the present embodiment, method 3 is employed. The reason is that, in method 3, there is no limitation of the wavelength band of method 1, and there is no method 2 It is a very good method because of the large coupling loss caused by the space between the optical waveguide and the mirror.

作為方法3，雖然亦有在矽細線光導波路之上部以電漿CVD形成矽氧化膜，利用與矽細線光導波路底層之熱氧化矽氧化膜之残留應力的差，使其自發性彎曲之方法，但此處，係採取使用半導體製造製程，形成矽細線光導波路之一端從形成光導波路之平面端呈懸臂樑狀伸長至自由空間中的構造，對形成為懸臂樑構造之矽基板(矽細線光導波路)，從基板上方之特定方位照射離子束，以使懸臂樑構造往上方(朝向面外)彎曲之方法。關於此方法之詳細情形，已揭示於例如特開2013-178333號公報。此方法與前述將矽細線光導波路以上下之氧化膜加以夾持之方法不同，由於係利用矽細線本身之內部應變應力，因此有無需上下氧化膜等之優點。 As a method 3, a method of forming a tantalum oxide film by plasma CVD in the upper portion of the thin-line optical waveguide, and causing spontaneous bending by using a difference in residual stress of the thermal oxide film of the tantalum thin-film optical waveguide. However, here, a semiconductor manufacturing process is adopted to form a structure in which the one end of the thin-line optical waveguide is elongated in a cantilever shape from the plane end forming the optical waveguide to the free space, and the crucible is formed into a cantilever beam structure (矽 thin line light guide) Wave path) A method of illuminating an ion beam from a particular orientation above the substrate to bend the cantilever beam structure upward (toward the out-of-plane). The details of this method are disclosed in, for example, Japanese Laid-Open Patent Publication No. 2013-178333. This method differs from the above-described method of sandwiching the oxide film above and below the thin-line optical waveguide. Since the internal strain stress of the thin wire itself is utilized, there is an advantage that an upper and lower oxide film is not required.

圖21中，符號285係代表以上述方法加工之矽細線光導波路(稱光導波路)。光導波路285之彎曲的末端部，係埋設於基板上形成之低折射材料層。 In Fig. 21, reference numeral 285 denotes a thin-line optical waveguide (referred to as an optical waveguide) processed by the above method. The curved end portion of the optical waveguide 285 is a low refractive material layer formed on the substrate.

變形例4之曝光裝置，除光電光學單元417之其他部分之構成、及光電光學單元417以外之構成，與前述第1實施形態之曝光裝置100相同。 The exposure apparatus of the fourth modification is the same as the exposure apparatus 100 of the first embodiment except for the configuration of the other portions of the photoelectric optical unit 417 and the configuration of the photoelectric optical unit 417.

因此，變形例4之曝光裝置，可獲得與前述第1實施形態之曝光裝置100同等之效果。 Therefore, in the exposure apparatus of the fourth modification, the same effects as those of the exposure apparatus 100 of the first embodiment described above can be obtained.

又，具備作為發光部而使用光子雷射之光束照射裝置的變形例4之曝光裝置中，亦係藉由將自發光型對比元件陣列284與光電元件54以不同體加以製作，而能採用與前述變形例1、變形例2或變形例3同樣之光電光學單元之構成。藉由此種構成之採用，可獲得與變形例1、變形例2或變形例3之曝光裝置同等之效果。 Further, in the exposure apparatus of the fourth modification including the light beam irradiation apparatus using the photon laser as the light-emitting portion, the self-luminous type contrast element array 284 and the photovoltaic element 54 can be formed in different bodies. The configuration of the photoelectric optical unit similar to the first modification, the second modification, or the third modification. With the adoption of such a configuration, the same effects as those of the exposure apparatus of Modification 1, Modification 2, and Modification 3 can be obtained.

又，變形例4之曝光裝置中，亦可取代兼作為鏡筒104內部(及真空室33)之真空間隔壁之光束照射裝置280，而設置兼作為真空間隔壁之自發光型對比元件陣列284，於該自發光型對比元件陣列284之下透過既定間隙配置前述各種型式之孔徑一體型光電元件、或孔徑不同體型光電元件，將之收納於鏡筒104內部。此場合，可設置孔徑一體型光電元件136(136a~136d)之驅動機構、或使光電元件140與孔徑板142(142a~142d)中至少一方移動之驅動機構。亦可取代兼作為真空間隔壁之光束照射裝置280，將底板38之貫通孔38a以由光穿透構件構成之真空間隔壁加以封閉，於真空間隔壁之下透過既定間隙配置前述各種型式之孔徑一體型光電元件、或孔徑不同體型光電元件，將之收納於鏡筒104之內部。此場合，可將前述自發光型對比元件陣列284配置在該真空間隔壁之外部，並設置使自發光型對比元件陣列284移動之驅動機構。或者，取代使自發光型對比元件陣列284移動之驅動機構、或與此一起，設置孔徑一體型光電元件136(136a~136d)之驅動機構、或使光電元件140與孔徑板142(142a~142d)中至少一方移動之驅動機構。 Further, in the exposure apparatus of the fourth modification, the inside of the lens barrel 104 may be used instead of The vacuum partition wall beam irradiation device 280 of the vacuum chamber 33) is provided with a self-luminous type contrast element array 284 which also serves as a vacuum partition wall, and the apertures of the above various types are disposed under the self-light-emitting type contrast element array 284 through a predetermined gap. An integrated photovoltaic element or a different aperture type photovoltaic element is housed inside the lens barrel 104. In this case, a driving mechanism of the aperture-integrated photoelectric element 136 (136a to 136d) or a driving mechanism for moving at least one of the photovoltaic element 140 and the aperture plate 142 (142a to 142d) may be provided. Alternatively, instead of the light beam irradiation device 280 serving as a vacuum partition, the through hole 38a of the bottom plate 38 may be closed by a vacuum partition wall composed of a light-transmitting member, and the above-mentioned various types of apertures may be disposed under a vacuum partition wall through a predetermined gap. The integrated photovoltaic element or the optical element having a different aperture diameter is housed inside the lens barrel 104. In this case, the self-luminous type contrast element array 284 may be disposed outside the vacuum partition wall, and a driving mechanism for moving the self-luminous type contrast element array 284 may be provided. Alternatively, instead of or in conjunction with the driving mechanism for moving the self-luminous type contrast element array 284, the driving mechanism of the aperture-integrated photoelectric element 136 (136a to 136d) or the photoelectric element 140 and the aperture plate 142 (142a to 142d) may be provided. A drive mechanism in which at least one of the parties moves.

又，於包含變形例之上述第1實施形態(以下，稱各實施形態)，雖係針對曝光裝置100所具備之光學系統為具備複數個多光束光學系統之多列(multi-column)型式之情形做了說明，但不限於此，光學系統亦可以是單列(single-column)型式之多射束光學系統。即使是此種單列形式之多光束光學系統，亦能適用以上說明之劑量控制、倍率控制、圖案之成像位置偏移之修正、畸變等各種像差之修正、以及使用光電元件或孔徑板之各種要素之修正、光電層之長壽命化等。亦能適用於將單一光束照射於標的物之單列型式之裝置。此外，亦可於圖15、圖16之曝光裝置中，在發光元件與光電元件之間配置縮小光學系統(投影光學系統、成像光學系統)。 Further, in the above-described first embodiment including the modified example (hereinafter, referred to as each embodiment), the optical system included in the exposure apparatus 100 is a multi-column type having a plurality of multi-beam optical systems. The case has been described, but is not limited thereto, and the optical system may also be a single-column type multi-beam optical system. Even in the multi-beam optical system of the single-column type, the above-described dose control, magnification control, correction of the image positional shift of the pattern, correction of various aberrations such as distortion, and various types of photoelectric elements or aperture plates can be applied. Correction of elements, long life of photovoltaic layers, etc. It can also be applied to a single-row type device that illuminates a single beam of light. Further, in the exposure apparatus of FIGS. 15 and 16, a reduction optical system (projection optical system, imaging optical system) may be disposed between the light-emitting element and the photoelectric element.

又，上述各實施形態中，可於周壁部76設置開口，將真空室33與載台室10之內部做成1個真空室。或者，僅留下周壁部76上端部之一部分並拿掉冷卻板74，將真空室33與載台室10之內部做成1個真空室。 Further, in each of the above embodiments, an opening may be provided in the peripheral wall portion 76, and the inside of the vacuum chamber 33 and the stage chamber 10 may be a single vacuum chamber. Or, leaving only a part of the upper end portion of the peripheral wall portion 76 and The cooling plate 74 is removed, and the inside of the vacuum chamber 33 and the stage chamber 10 is made into one vacuum chamber.

又，上述各實施形態，雖係針對晶圓W被單獨搬送至晶圓載台WST上，一邊使該晶圓載台WST移動於掃描方向、一邊從多光束光學系統對晶圓W照射射束以進行曝光的曝光裝置100做了說明，但不限於此，在晶圓W可與被稱為搬運梭(shuttle)之晶圓一體搬送之桌台(保持具)一體在載台上被更換之型式之曝光裝置，亦能適用上述各實施形態(除晶圓載台WST外)。 Further, in each of the above-described embodiments, the wafer W is individually transported onto the wafer stage WST, and the wafer stage W is irradiated in the scanning direction while the wafer W is irradiated from the multi-beam optical system. Although the exposure apparatus 100 of the exposure was demonstrated, it is not limited to this, and the type which the wafer W can be mutually integrated on the stage which can be conveyed integrally with the wafer called a shuttle is carried out on the stage. The above embodiments (except for the wafer stage WST) can also be applied to the exposure apparatus.

又，於上述各實施形態，雖係針對晶圓載台WST可相對X載台於6自由度方向移動之情形做了說明，但不限於此，晶圓載台WST可以是僅能在XY平面內移動。此場合，測量晶圓載台WST之位置資訊的位置測量系統28，可以是能測量在XY平面內之3自由度方向之位置資訊者。 Further, in each of the above embodiments, the wafer stage WST is movable in the six-degree-of-freedom direction with respect to the X stage. However, the present invention is not limited thereto, and the wafer stage WST can be moved only in the XY plane. . In this case, the position measuring system 28 that measures the position information of the wafer stage WST may be one that can measure the position information in the three-degree-of-freedom direction in the XY plane.

上述各實施形態，雖係針對光學系統18透過構成載台室10之頂部之框架16被支承於地面上之情形做了說明，但不限於此，亦可以是在無塵室之頂面或真空室之頂面，藉由具備防振功能之懸吊支承機構以例如3點懸吊支承。 In each of the above embodiments, the optical system 18 is supported by the frame 16 constituting the top of the stage chamber 10 on the floor. However, the present invention is not limited thereto, and may be on the top surface of the clean room or vacuum. The top surface of the chamber is suspended by, for example, three points by a suspension support mechanism having an anti-vibration function.

又，構成互補性微影之曝光技術，不限於使用ArF準分子雷射光源之液浸曝光技術與帶電粒子束曝光技術的組合，亦可以是例如將線與空間圖案以使用ArF準分子雷射光源、或KrF準分子雷射光源等其他光源之乾式曝光技術形成。 Moreover, the exposure technique constituting the complementary lithography is not limited to the combination of the immersion exposure technique using the ArF excimer laser source and the charged particle beam exposure technique, and may be, for example, a line and space pattern using an ArF excimer laser. A dry exposure technique is used for light sources, or other light sources such as KrF excimer laser sources.

又，上述各實施形態，雖係針對標的物為半導體元件製造用之晶圓之情形做了說明，但上述各實施形態之曝光裝置100亦非常適合應用於製造在玻璃基板上形成微細圖案之光罩。 Further, in each of the above embodiments, the case where the target object is a wafer for manufacturing a semiconductor element has been described. However, the exposure apparatus 100 of each of the above embodiments is also suitably applied to manufacture light having a fine pattern formed on a glass substrate. cover.

半導體元件等之電子元件(微元件)，如圖22所示，係經由進行元件之功能性能設計的步驟、從矽材料製作晶圓的步驟、藉由微影技術等於晶圓上形成實際之電路等的晶圓處理步驟、元件組裝步驟(包含切割製程、接合製程、封裝製程)、檢査步驟等加以製造。晶圓處理步驟，包含微影步驟(包含在晶圓上塗布抗蝕劑(感應材)之製程、以前述實施形態之電子束曝光裝置及其曝光方法進行對晶圓之曝光(依據設計之圖案資料的圖案描繪)之製程、以及使曝光後之晶圓顯影之製程)、將殘存有抗蝕劑之部分以外之部分之露出構件以蝕刻加以去除之蝕刻步驟、將蝕刻完成後無需之抗蝕劑去除之抗蝕劑除去步驟等。晶圓處理步驟，可在微影步驟之前，進一步包含前製程之處理(氧化步驟、CVD步驟、電極形成步驟、離子植入步驟等)。此場合，於微影步驟中，係藉由使用上述各實施形態之曝光裝置100實施前述曝光方法，以在晶圓上形成元件圖案，因此能以良好的生產性(高良率)製造高積體度之微元件。特別是在微影步驟(進行曝光之製程)中，進行前述互補性微影，此時藉由使用上述各實施形態之曝光裝置100實施前述曝光方法，能製造積體度更高之微元件。 An electronic component (micro component) such as a semiconductor element, as shown in FIG. 22, is a step of fabricating a wafer from a germanium material by a step of performing functional design of the component, and a practical circuit is formed on the wafer by lithography. Wafer processing steps, component assembly steps (including cutting process, connection) Manufacturing process, packaging process, inspection steps, etc. are manufactured. The wafer processing step includes a lithography step (including a process of applying a resist (inductive material) on the wafer, and exposing the wafer to the wafer by the electron beam exposure apparatus of the foregoing embodiment and an exposure method thereof (in accordance with a design pattern) The process of patterning the data and the process of developing the exposed wafer), the etching step of removing the exposed portion of the portion other than the portion where the resist remains, and the etching which is not required after the etching is completed The resist removal step of the agent removal, and the like. The wafer processing step may further include a pre-process (oxidation step, CVD step, electrode formation step, ion implantation step, etc.) before the lithography step. In this case, in the lithography step, by performing the exposure method by using the exposure apparatus 100 of each of the above embodiments, the element pattern is formed on the wafer, so that a high productivity can be produced with good productivity (high yield). Micro-components. In particular, in the lithography step (process for performing exposure), the complementary lithography is performed. In this case, by performing the exposure method using the exposure apparatus 100 of each of the above embodiments, it is possible to manufacture a micro-component having a higher degree of integration.

又，上述各實施形態，雖係針對使用電子束之曝光裝置做了說明，但不限於曝光裝置，熔接等使用電子束對標的物進行既定加工及既定處理之至少一方的裝置、或使用電子束之檢査裝置等，亦能適用上述實施形態之電子束裝置。 In addition, although the above-mentioned embodiment has been described with respect to an exposure apparatus using an electron beam, it is not limited to an exposure apparatus, a device for performing at least one of predetermined processing and predetermined processing using an electron beam-targeted object such as welding, or an electron beam. The electron beam apparatus of the above embodiment can also be applied to an inspection apparatus or the like.

又，上述各實施形態，雖係針對光電層60以鹼光電轉換膜形成之情形做了說明，但視電子束裝置之種類、用途，作為光電層不限於鹼光電轉換膜，亦可使用其他種類之光電轉換膜來構成光電元件。 In addition, although the above-mentioned embodiment has been described with respect to the case where the photoelectric layer 60 is formed of an alkali photoelectric conversion film, the type of the electron beam device and the use thereof are not limited to the alkali photoelectric conversion film, and other types may be used. The photoelectric conversion film constitutes a photovoltaic element.

又，上述各實施形態，雖有以圓形、矩形等來說明構件、開口、孔等之形狀，但當然不限於此等形狀。 Further, in each of the above embodiments, the shape of the member, the opening, the hole, and the like are described in a circular shape, a rectangular shape, or the like, but it is of course not limited to such a shape.

又，上述各實施形態之複數個構成要件可適當的加以組合。因此，上述複數個構成要件中之一部分可以不使用。 Further, a plurality of constituent elements of the above embodiments may be combined as appropriate. Therefore, one of the above plurality of constituent elements may not be used.

又，援用於上述實施形態所引用之關於曝光裝置等之所有公報、國際公開、美國專利申請公開說明書及美國專利說明書等之揭示，作為本說明書記載之一部分。 Further, it is applied to all the public parts of the exposure apparatus and the like cited in the above embodiments. The disclosures of the newspapers, the International Publications, the U.S. Patent Application Publications, and the U.S. Patent Specification are incorporated herein by reference.

Claims

一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；來自該複數個發光部之各個之光，不透過空間射入該光電轉換層。 An electron beam device that irradiates light to a photoelectric conversion layer and irradiates electrons generated from the photoelectric conversion layer as an electron beam to a target, which includes: a plurality of light emitting portions; and an electron beam optical system a plurality of light beams generated by at least a part of the plurality of light-emitting portions are irradiated onto the photoelectric conversion layer, and electrons emitted from the photoelectric conversion layer are irradiated to the target as a plurality of electron beams; and each of the plurality of light-emitting portions is emitted The light is incident on the photoelectric conversion layer without a space.

一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；來自該複數個發光部之各個之光，不透過氣體空間射入該光電轉換層。 An electron beam device that irradiates light to a photoelectric conversion layer and irradiates electrons generated from the photoelectric conversion layer as an electron beam to a target, which includes: a plurality of light emitting portions; and an electron beam optical system a plurality of light beams generated by at least a part of the plurality of light-emitting portions are irradiated onto the photoelectric conversion layer, and electrons emitted from the photoelectric conversion layer are irradiated to the target as a plurality of electron beams; and each of the plurality of light-emitting portions is emitted The light is incident on the photoelectric conversion layer without passing through the gas space.

如請求項2之電子束裝置，來自該複數個發光部之各個之光，不透過真空空間射入該光電轉換層。 In the electron beam apparatus of claim 2, light from each of the plurality of light-emitting portions is incident on the photoelectric conversion layer without passing through a vacuum space.

一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；來自該複數個發光部之各個之光，不透過真空空間射入該光電轉換層。 An electron beam device that irradiates light to a photoelectric conversion layer and irradiates electrons generated from the photoelectric conversion layer as an electron beam to a target, which includes: a plurality of light emitting portions; and an electron beam optical system a plurality of light beams generated by at least a part of the plurality of light-emitting portions are irradiated onto the photoelectric conversion layer, and electrons emitted from the photoelectric conversion layer are irradiated to the target as a plurality of electron beams; and each of the plurality of light-emitting portions is emitted The light is incident on the photoelectric conversion layer without passing through a vacuum space.

如請求項1至4中任一項之電子束裝置，其中，該複數個發光部係發光元件之一部分。 The electron beam apparatus of any one of claims 1 to 4, wherein the plurality of light emitting portions are part of a light emitting element.

如請求項5之電子束裝置，其中，該發光元件之至少一部分係兼作為配置該光電轉換層之電子放射面之真空室的間隔壁。 An electron beam apparatus according to claim 5, wherein at least a part of the light-emitting element serves as a partition wall of a vacuum chamber in which an electron-emitting surface of the photoelectric conversion layer is disposed.

一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：發光元件，其具有複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；該發光元件之至少一部分係兼作為配置該光電轉換層之電子放射面之真空室的間隔壁。 An electron beam device that irradiates light to a photoelectric conversion layer and irradiates electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a light-emitting element having a plurality of light-emitting portions; and an electron beam optical system; The plurality of light beams generated by the light emission of at least a part of the plurality of light-emitting portions are irradiated onto the photoelectric conversion layer to emit electrons from the photoelectric conversion layer, and the plurality of electron beams are irradiated to the target object; the light-emitting element At least a part of the partition walls serve as a vacuum chamber in which the electron emission surface of the photoelectric conversion layer is disposed.

如請求項5至7中任一項之電子束裝置，其中，在該複數個發光部與該光電轉換層間之光路上配置有複數個光學構件；該複數個光學構件係在與該電子束光學系統之光軸交叉之方向並置；該複數個光學構件之各個，將來自該複數個發光部中至少1個發光部之光聚光，並射出射入該光電轉換層之該複數條光束中之1條。 The electron beam apparatus according to any one of claims 5 to 7, wherein a plurality of optical members are disposed on an optical path between the plurality of light emitting portions and the photoelectric conversion layer; the plurality of optical members are optically coupled to the electron beam The optical axes of the system are juxtaposed in a direction intersecting each other; each of the plurality of optical members condenses light from at least one of the plurality of light emitting portions, and emits the plurality of light beams incident on the photoelectric conversion layer 1 article.

如請求項8之電子束裝置，其中，該發光元件與該複數個光學構件一體。 The electron beam apparatus of claim 8, wherein the light emitting element is integral with the plurality of optical members.

如請求項8或9之電子束裝置，其中，於該複數個光學構件之各個，來自該複數個發光部中至少1個發光部之光不透過空間射入。 The electron beam apparatus according to claim 8 or 9, wherein, in each of the plurality of optical members, light from at least one of the plurality of light-emitting portions is incident through a space.

如請求項5至10中任一項之電子束裝置，其具備具有該光電轉換層之光電元件。 An electron beam apparatus according to any one of claims 5 to 10, comprising a photovoltaic element having the photoelectric conversion layer.

如請求項11之電子束裝置，其中，該發光元件係在該光電元件之光射入面側，與該光電元件一體成形。 An electron beam apparatus according to claim 11, wherein the light emitting element is attached to the photovoltaic element The light is incident on the surface side, and is integrally formed with the photovoltaic element.

如請求項11之電子束裝置，其中，該發光元件係在該光電元件之光射入面側，於該電子束光學系統之光軸方向與該光電元件分離配置。 The electron beam apparatus according to claim 11, wherein the light-emitting element is disposed on a light incident surface side of the photovoltaic element, and is disposed apart from the photovoltaic element in an optical axis direction of the electron beam optical system.

如請求項13之電子束裝置，其中，該光電元件係於該電子束光學系統之光軸方向，相對配置該光電轉換層之電子放射面之真空室的真空間隔壁，配置在該發光元件之相反側。 The electron beam apparatus of claim 13, wherein the photovoltaic element is disposed in an optical axis direction of the electron beam optical system, and a vacuum partition wall of a vacuum chamber opposite to an electron emission surface of the photoelectric conversion layer is disposed in the light emitting element Opposite side.

如請求項13之電子束裝置，其中，該光電元件之至少一部分係兼作為配置該光電轉換層之電子放射面之真空室的真空間隔壁。 The electron beam apparatus of claim 13, wherein at least a portion of the photovoltaic element serves as a vacuum partition wall of a vacuum chamber in which an electron emitting surface of the photoelectric conversion layer is disposed.

如請求項13至15中任一項之電子束裝置，其中，該發光元件與該光電元件在與該電子束光學系統之光軸正交之面內之至少1方向，可相對移動。 The electron beam apparatus according to any one of claims 13 to 15, wherein the light-emitting element and the photovoltaic element are relatively movable in at least one direction in a plane orthogonal to an optical axis of the electron beam optical system.

如請求項16之電子束裝置，其進一步具備將該光電元件移動於該至少1方向之致動器。 The electron beam apparatus of claim 16, further comprising an actuator that moves the photovoltaic element in the at least one direction.

如請求項5至17中任一項之電子束裝置，其中，該發光元件包含自發光型對比元件陣列。 The electron beam apparatus according to any one of claims 5 to 17, wherein the light-emitting element comprises an array of self-luminous type contrast elements.

一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：發光元件，其具有複數個發光部；以及電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；該發光元件包含自發光型對比元件陣列。 An electron beam device that irradiates light to a photoelectric conversion layer and irradiates electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a light-emitting element having a plurality of light-emitting portions; and an electron beam optical system; The plurality of light beams generated by the light emission of at least a part of the plurality of light-emitting portions are irradiated onto the photoelectric conversion layer to emit electrons from the photoelectric conversion layer, and the plurality of electron beams are irradiated to the target object; the light-emitting element A self-illuminating contrast element array is included.

如請求項1至4中任一項之電子束裝置，其具備具有該光電轉換層之光電元件。 The electron beam apparatus according to any one of claims 1 to 4, comprising a photovoltaic element having the photoelectric conversion layer.

如請求項20之電子束裝置，其中，該光電元件之至少一部分兼作為配置該光電轉換層之電子放射面之真空室的間隔壁。 The electron beam apparatus of claim 20, wherein at least a portion of the photovoltaic element serves as a partition wall of a vacuum chamber in which an electron emitting surface of the photoelectric conversion layer is disposed.

如請求項20或21之電子束裝置，其具備配置在該複數個發光部與該光電轉換層間之光路上的複數個光學構件；該複數個光學構件係在與該電子束光學系統之光軸交叉之方向並置；該複數個光學構件之各個，將來自該複數個發光部中至少1個發光部之光聚光，並射出射入該光電轉換層之該複數條光束中之1條。 An electron beam apparatus according to claim 20 or 21, comprising: a plurality of optical members disposed on an optical path between the plurality of light emitting portions and the photoelectric conversion layer; the plurality of optical members being coupled to an optical axis of the electron beam optical system The intersecting directions are juxtaposed; each of the plurality of optical members condenses light from at least one of the plurality of light emitting portions, and emits one of the plurality of light beams incident on the photoelectric conversion layer.

如請求項22之電子束裝置，其中，於該複數個光學構件之各個，來自該複數個發光部中至少1個發光部之光不透過空間射入。 The electron beam apparatus according to claim 22, wherein, in each of the plurality of optical members, light from at least one of the plurality of light-emitting portions is incident through a space.

如請求項11至23中任一項之電子束裝置，其中，該光電元件具有可使該光束穿透的光穿透構件、與形成在該光穿透構件之光射出側之面的該光電轉換層。 The electron beam apparatus according to any one of claims 11 to 23, wherein the photovoltaic element has a light penetrating member that can penetrate the light beam, and the photoelectric layer formed on a light emitting side of the light penetrating member Conversion layer.

如請求項24之電子束裝置，其中，於該光穿透構件之一側配置有遮光層；於該遮光層形成有複數個孔徑；通過該複數個孔徑之至少一部分之複數條光束射入該光電轉換層。 The electron beam apparatus of claim 24, wherein a light shielding layer is disposed on one side of the light penetrating member; a plurality of apertures are formed in the light shielding layer; and a plurality of light beams passing through at least a part of the plurality of apertures are incident on the light beam Photoelectric conversion layer.

如請求項25之電子束裝置，其中，該遮光層配置在該光穿透構件之光射出面側。 The electron beam apparatus of claim 25, wherein the light shielding layer is disposed on a light exit surface side of the light penetrating member.

如請求項25或26之電子束裝置，其中，於形成在該遮光層之複數個孔徑配置有該光電轉換層。 The electron beam apparatus of claim 25 or 26, wherein the photoelectric conversion layer is disposed in a plurality of apertures formed in the light shielding layer.

如請求項25之電子束裝置，其中，該遮光層配置在該光穿透構件之光射入面側。 The electron beam apparatus of claim 25, wherein the light shielding layer is disposed on a light incident surface side of the light penetrating member.

如請求項11至24中任一項之電子束裝置，其中，通過孔徑構件之複數個孔徑之至少一部分之複數條光束照射於該光電轉換層。 The electron beam apparatus according to any one of claims 11 to 24, wherein the plurality of light beams passing through at least a part of the plurality of apertures of the aperture member are irradiated to the photoelectric conversion layer.

如請求項29之電子束裝置，其具備該孔徑構件。 An electron beam apparatus according to claim 29, which is provided with the aperture member.

如請求項29或30之電子束裝置，其中，該孔徑構件具有可使該光束穿透之光穿透構件、與配置在該光穿透構件之一側之遮光層；該複數個孔徑形成於該遮光層。 The electron beam apparatus of claim 29 or 30, wherein the aperture member has a light penetrating member that allows the light beam to penetrate, and a light shielding layer disposed on one side of the light penetrating member; the plurality of apertures are formed in The light shielding layer.

如請求項31之電子束裝置，其中，該遮光層配置在該光穿透構件之光射出面側。 The electron beam apparatus of claim 31, wherein the light shielding layer is disposed on a light exit surface side of the light penetrating member.

如請求項29至32中任一項之電子束裝置，其中，該孔徑構件可往與該電子束光學系統之光軸正交之方向移動。 The electron beam apparatus of any one of claims 29 to 32, wherein the aperture member is movable in a direction orthogonal to an optical axis of the electron beam optical system.

如請求項29至33中任一項之電子束裝置，其中，該孔徑構件與該複數個發光部，可在與該電子束光學系統之光軸正交之方向相對移動。 The electron beam apparatus according to any one of claims 29 to 33, wherein the aperture member and the plurality of light emitting portions are relatively movable in a direction orthogonal to an optical axis of the electron beam optical system.

如請求項29至34中任一項之電子束裝置，其中，該孔徑構件與該光電元件，可在與該電子束光學系統之光軸正交之方向相對移動。 The electron beam apparatus according to any one of claims 29 to 34, wherein the aperture member and the photovoltaic element are relatively movable in a direction orthogonal to an optical axis of the electron beam optical system.

如請求項29至35中任一項之電子束裝置，其中，該孔徑構件與該光電元件，可一邊維持該孔徑構件與該光電元件之位置關係、一邊往與該電子束光學系統之光軸正交之方向移動。 The electron beam apparatus according to any one of claims 29 to 35, wherein the aperture member and the photoelectric element are movable to an optical axis of the electron beam optical system while maintaining a positional relationship between the aperture member and the photoelectric element Move in the direction of the orthogonal direction.

如請求項1至10中任一項之電子束裝置，其中，該光電轉換層配置在可使該光束穿透之光穿透構件之光射出面側；於該光穿透構件之一側配置有遮光層；於該遮光層形成有複數個孔徑；通過該複數個孔徑之複數條光束射入該光電轉換層。 The electron beam apparatus according to any one of claims 1 to 10, wherein the photoelectric conversion layer is disposed on a light exit surface side of the light penetrating member through which the light beam can pass; and is disposed on one side of the light penetrating member a light shielding layer; a plurality of apertures are formed in the light shielding layer; and the plurality of light beams passing through the plurality of apertures are incident on the photoelectric conversion layer.

如請求項37之電子束裝置，其中，該遮光層配置在該光穿透構件之光射出面側。 The electron beam apparatus of claim 37, wherein the light shielding layer is disposed on a light exit surface side of the light penetrating member.

如請求項38之電子束裝置，其中，在形成於該遮光層之複數個孔徑配置有光電轉換層。 The electron beam apparatus of claim 38, wherein the plurality of apertures formed in the light shielding layer are provided with a photoelectric conversion layer.

如請求項37之電子束裝置，其中，該遮光層配置在該光穿透構件之光射入面側。 The electron beam apparatus of claim 37, wherein the light shielding layer is disposed on a light incident surface side of the light penetrating member.

如請求項25至40中任一項之電子束裝置，其中，該標的物係一邊往與該電子束光學系統之光軸正交之第1方向移動、一邊被該電子束照射；該複數個孔徑包含第1群與第2群，該第1群包含在與該電子束光學系統之光軸正交、且與該第1方向正交之第2方向對應之方向以第1節距配置之複數個孔徑，該第2群包含在與該第2方向相對之方向以第2節距配置之複數個孔徑；該第1群與該第2群在與該第1方向對應之方向分離。 The electron beam apparatus according to any one of claims 25 to 40, wherein the target object is irradiated by the electron beam while moving in a first direction orthogonal to an optical axis of the electron beam optical system; The aperture includes a first group and a second group, and the first group is disposed at a first pitch in a direction orthogonal to an optical axis of the electron beam optical system and orthogonal to the first direction. a plurality of apertures, the second group including a plurality of apertures arranged at a second pitch in a direction opposite to the second direction; and the first group and the second group are separated in a direction corresponding to the first direction.

如請求項41之電子束裝置，其中，該複數個發光部包含第1群與第2群，該第1群包含在與該第2方向對應之方向以該第1節距配置之複數個發光部，該第2群包含在相對該第2方向之方向以該第2節距配置之複數個發光部；該第1群發光部與該第2群發光部在與該第1方向對應之方向分離。 The electron beam apparatus according to claim 41, wherein the plurality of light emitting units include a first group and a second group, and the first group includes a plurality of light beams arranged at the first pitch in a direction corresponding to the second direction The second group includes a plurality of light emitting portions arranged at the second pitch in a direction opposite to the second direction; the first group light emitting portion and the second group light emitting portion are in a direction corresponding to the first direction Separation.

如請求項41或42之電子束裝置，其中，可在通過該第1群中所含之該複數個孔徑中至少1個之光束照射於該光電轉換層的第1狀態、與通過該第2群中所含之該複數個孔徑中至少1個之光束照射於該光電轉換層的第2狀態中之一方切換至另一方。 The electron beam apparatus according to claim 41 or 42, wherein at least one of the plurality of apertures included in the first group is irradiated to the first state of the photoelectric conversion layer, and the second state is passed A light beam of at least one of the plurality of apertures included in the group is switched to one of the second states of the photoelectric conversion layer to be switched to the other.

如請求項25至43中任一項之電子束裝置，其中，該複數個孔徑配置在與該電子束光學系統之光軸正交之面內。 The electron beam apparatus of any one of claims 25 to 43, wherein the plurality of apertures are disposed in a plane orthogonal to an optical axis of the electron beam optical system.

如請求項25至44中任一項之電子束裝置，其中，該複數個孔徑各個之尺寸較對應之光束剖面尺寸小。 The electron beam apparatus of any one of claims 25 to 44, wherein the plurality of apertures each have a smaller size than the corresponding beam profile size.

如請求項25至45中任一項之電子束裝置，其中，該複數個孔徑之各個，限制對應之光束；通過該複數個孔徑之各個之複數條光束，射入該光電轉換層。 The electron beam apparatus of any one of claims 25 to 45, wherein each of the plurality of apertures limits a corresponding beam; and the plurality of beams passing through the plurality of apertures are incident on the photoelectric conversion layer.

如請求項25至46中任一項之電子束裝置，其中，該複數個孔徑中至少1個之形狀，與通過該複數個孔徑之各個之複數條光束射入該光電轉換層而生成之該複數條電子束在該標的物上之照射區域之形狀相異。 The electron beam apparatus according to any one of claims 25 to 46, wherein the shape of at least one of the plurality of apertures is generated by injecting a plurality of beams passing through the plurality of apertures into the photoelectric conversion layer The shape of the illumination area of the plurality of electron beams on the target object is different.

如請求項47之電子束裝置，其中，係以該複數條電子束之各個在該標的物上之照射區域成矩形之方式，決定該至少1個孔徑之形狀。 The electron beam apparatus of claim 47, wherein the shape of the at least one aperture is determined such that each of the plurality of electron beams has a rectangular area on the target.

如請求項48之電子束裝置，其中，係以抑制在該標的物上之照射區域之角部之圓弧之方式，決定該至少1個孔徑各個之形狀。 The electron beam apparatus according to claim 48, wherein the shape of each of the at least one aperture is determined so as to suppress an arc of a corner of the irradiation area on the target.

如請求項47至49中任一項之電子束裝置，其中，該至少1個孔徑之形狀，係考慮該複數條電子束照射於該標的物時所產生之電子之前方散射加以決定。 The electron beam apparatus according to any one of claims 47 to 49, wherein the shape of the at least one aperture is determined in consideration of scattering of electrons generated when the plurality of electron beams are irradiated onto the target.

如請求項25至50中任一項之電子束裝置，其中，該複數個孔徑之配置係根據該電子束光學系統之光學特性加以決定。 The electron beam apparatus of any one of claims 25 to 50, wherein the configuration of the plurality of apertures is determined according to optical characteristics of the electron beam optical system.

如請求項25至51中任一項之電子束裝置，其中，該複數個孔徑之配置係根據該電子束光學系統之畸變加以決定。 The electron beam apparatus of any one of claims 25 to 51, wherein the configuration of the plurality of apertures is determined according to distortion of the electron beam optical system.

如請求項25至52中任一項之電子束裝置，其中，該複數個孔徑之配置係以抵消或降低該電子束光學系統之像差對該複數條電子束之影響之方式加以決定。 The electron beam apparatus of any one of claims 25 to 52, wherein the plurality of aperture configurations are determined in such a manner as to cancel or reduce the influence of the aberration of the electron beam optical system on the plurality of electron beams.

如請求項1至4中任一項之電子束裝置，其具備配置在該複數個發光部與該光電轉換層間之光路上的複數個光學構件；該複數個光學構件係在與該電子束光學系統之光軸交叉之方向並置；該複數個光學構件之各個，將來自該複數個發光部中至少1個發光部之光束聚光，並射出該複數條光束中之1條。 An electron beam apparatus according to any one of claims 1 to 4, comprising: a plurality of optical members disposed on an optical path between the plurality of light emitting portions and the photoelectric conversion layer; the plurality of optical members being optically coupled to the electron beam The optical axes of the system are juxtaposed in a direction intersecting each other; each of the plurality of optical members condenses a light beam from at least one of the plurality of light emitting portions, and emits one of the plurality of light beams.

如請求項54之電子束裝置，其中，於該複數個光學構件之各個，來自該複數個發光部中至少1個發光部之光束不透過空間射入。 The electron beam apparatus according to claim 54, wherein, in each of the plurality of optical members, a light beam from at least one of the plurality of light-emitting portions is incident through a space.

如請求項1至24中任一項之電子束裝置，其中，該標的物係一邊往與該電子束光學系統之光軸正交之第1方向移動、一邊被該電子束照射；該複數個發光部，包含第1群與第2群，該第1群包含在與該電子束光學系統之光軸正交、且與該第1方向正交之第2方向對應之方向以第1節距配置的複數個發光部，該第2群包含在與該第2方向對應之方向以第2節距配置之複數個發光部；該第1群與該第2群在與該第1方向對應之方向分離配置。 The electron beam apparatus according to any one of claims 1 to 24, wherein the target object is irradiated by the electron beam while moving in a first direction orthogonal to an optical axis of the electron beam optical system; The light-emitting unit includes a first group and a second group, and the first group includes a first pitch in a direction orthogonal to an optical axis of the electron beam optical system and a second direction orthogonal to the first direction. a plurality of light emitting units arranged, wherein the second group includes a plurality of light emitting portions arranged at a second pitch in a direction corresponding to the second direction; and the first group and the second group correspond to the first direction Directional separation configuration.

如請求項1至56中任一項之電子束裝置，其中，該光電轉換層是彎曲的。 The electron beam apparatus of any one of claims 1 to 56, wherein the photoelectric conversion layer is curved.

如請求項57之電子束裝置，其中，該光電轉換層係朝向該電子束光學系統彎曲成凹狀。 The electron beam apparatus of claim 57, wherein the photoelectric conversion layer is curved in a concave shape toward the electron beam optical system.

如請求項57或58之電子束裝置，其中，該光電轉換層係彎曲成可抵消或降低該電子束光學系統之像差對該複數條電子束之影響。 The electron beam apparatus of claim 57 or 58, wherein the photoelectric conversion layer is curved to cancel or reduce the influence of the aberration of the electron beam optical system on the plurality of electron beams.

如請求項57至59中任一項之電子束裝置，其中，係藉由使該光電轉換層彎曲，據以補償該電子束光學系統之像面彎曲之至少一部分。 The electron beam apparatus of any one of claims 57 to 59, wherein at least a portion of the curvature of field of the electron beam optical system is compensated by bending the photoelectric conversion layer.

如請求項57~60中任一項之電子束裝置，其中，該標的物係一邊往與該電子束光學系統之光軸正交之第1方向移動、一邊被該複數條射束照射；該光電轉換層係在與該電子束光學系統之光軸正交、且與該第1方向正交之第2方向對應之方向彎曲。 The electron beam apparatus according to any one of claims 57 to 60, wherein the target object is irradiated by the plurality of beams while moving in a first direction orthogonal to an optical axis of the electron beam optical system; The photoelectric conversion layer is curved in a direction orthogonal to the optical axis of the electron beam optical system and in a direction corresponding to the second direction orthogonal to the first direction.

如請求項1至61中任一項之電子束裝置，其中，該光電轉換層之電子放射面具有第1部分與第2部分；於該第2光學系統之光軸方向，該第1部分之位置與該第2部分之位置相異。 The electron beam apparatus according to any one of claims 1 to 61, wherein the electron-emitting surface of the photoelectric conversion layer has a first portion and a second portion; and in the optical axis direction of the second optical system, the first portion The position is different from the position of the second part.

如請求項1至62中任一項之電子束裝置，其中，該光電轉換層具有光電轉換效率之分布；根據該光電轉換效率之分布進行該光束之強度之調整。 The electron beam apparatus according to any one of claims 1 to 62, wherein the photoelectric conversion layer has a distribution of photoelectric conversion efficiency; and the intensity of the light beam is adjusted according to the distribution of the photoelectric conversion efficiency.

如請求項1至63中任一項之電子束裝置，其中，該光電轉換層具有：具第1光電轉換效率之第1部分、與具第2光電轉換效率之第2部分；為補償該第1及第2光電轉換效率之差異，調整照射於該第1部分之光束之強度與照射於該第2部分之光束之強度。 The electron beam apparatus according to any one of claims 1 to 3, wherein the photoelectric conversion layer has a first portion having a first photoelectric conversion efficiency and a second portion having a second photoelectric conversion efficiency; The difference between the first and second photoelectric conversion efficiencies adjusts the intensity of the light beam that is incident on the first portion and the intensity of the light beam that is incident on the second portion.

如請求項1至64中任一項之電子束裝置，其中，該標的物係一邊往與該電子束光學系統之光軸正交之第1方向移動、一邊被該電子束照射；可在從與該電子束光學系統之光軸正交並在與該第1方向正交之第2方向對應之方向能以第1節距將該複數條光束照射於該光電轉換層的第1狀態、與在與該第2方向對應之方向能以第2節距將該複數條光束照射於該光電轉換層的第2狀態中之一方切換為另一方。 The electron beam apparatus according to any one of claims 1 to 6, wherein the target object is irradiated by the electron beam while moving in a first direction orthogonal to an optical axis of the electron beam optical system; a plurality of light beams orthogonal to the optical axis of the electron beam optical system and corresponding to the second direction orthogonal to the first direction, the plurality of light beams can be irradiated to the first state of the photoelectric conversion layer at a first pitch, and In the direction corresponding to the second direction, one of the second states in which the plurality of light beams are irradiated to the photoelectric conversion layer at the second pitch can be switched to the other.

如請求項65之電子束裝置，其中，該複數個發光部包含第1列與第2列，該第1列包含排列於該第2方向之複數個發光部，該第2列包含排列於該第2方向之複數個發光部；該第1列與該第2列在與該第1方向對應之方向分離。 The electron beam apparatus according to claim 65, wherein the plurality of light emitting sections include a first column and a second column, wherein the first column includes a plurality of light emitting sections arranged in the second direction, and the second column includes the plurality of light emitting sections a plurality of light emitting portions in the second direction; the first column and the second column are separated in a direction corresponding to the first direction.

如請求項66之電子束裝置，其中，該第2列之功能係作為該第1列之備用。 The electron beam apparatus of claim 66, wherein the function of the second column is used as a backup for the first column.

如請求項1至67中任一項之電子束裝置，其中，可變更照射於該光電轉換層之該複數條光束中至少1條之強度。 The electron beam apparatus according to any one of claims 1 to 6, wherein the intensity of at least one of the plurality of light beams irradiated to the photoelectric conversion layer can be changed.

如請求項68之電子束裝置，其中，該強度之變更，包含該1個或2以上之照明光之強度與強度分布中至少一方之變更。 The electron beam apparatus of claim 68, wherein the change in intensity includes at least one of a strength and an intensity distribution of the one or more illumination lights.

如請求項1至69中任一項之電子束裝置，其中，係以藉由該複數條光束照射於該光電轉換層而生成之複數條電子束之強度大致成相同之方式，進行該強度之調整。 The electron beam apparatus of any one of claims 1 to 69, wherein The intensity is adjusted in such a manner that the intensity of the plurality of electron beams generated by the plurality of light beams irradiated to the photoelectric conversion layer is substantially the same.

如請求項68至70中任一項之電子束裝置，其中，考慮該複數條電子束照射到該標的物時所產生之電子之前方散射與後方散射之至少一方，調整該複數條光束中至少1條光束之強度。 The electron beam apparatus according to any one of claims 68 to 70, wherein at least one of the front side scattering and the back side scattering of the electrons generated when the plurality of electron beams are irradiated onto the target object is adjusted, and at least one of the plurality of light beams is adjusted The intensity of one beam.

如請求項1至71中任一項之電子束裝置，其中，該複數個發光部可提供在與該電子束光學系統之光軸正交之面內配置成陣列狀之複數條射束。 The electron beam apparatus according to any one of claims 1 to 7, wherein the plurality of light emitting sections are provided with a plurality of beams arranged in an array in a plane orthogonal to an optical axis of the electron beam optical system.

如請求項72之電子束裝置，其中，該複數條光束係在與該電子束光學系統之光軸正交之面內配置成2維陣列狀。 The electron beam apparatus of claim 72, wherein the plurality of beams are arranged in a two-dimensional array in a plane orthogonal to an optical axis of the electron beam optical system.

如請求項1至73中任一項之電子束裝置，其中，該電子束光學系統具有靜電偏向透鏡。 The electron beam apparatus of any one of claims 1 to 73, wherein the electron beam optical system has an electrostatic deflection lens.

如請求項74之電子束裝置，其中，該靜電偏向透鏡係用於該電子束光學系統之縮小倍率調整、與照射於該標的物之該複數條電子束之位置調整之至少一方。 The electron beam apparatus of claim 74, wherein the electrostatic deflection lens is used for at least one of a reduction ratio adjustment of the electron beam optical system and a position adjustment of the plurality of electron beams irradiated to the target object.

如請求項74或75之電子束裝置，其中，該標的物係一邊往與該電子束光學系統之光軸正交之第1方向移動、一邊被該電子束照射；該電子束光學系統，具有該第1方向之長度為a、與該電子束光學系統之光軸大致正交且與該第1方向正交之第2方向之長度為b之矩形曝光場；來自該電子束光學系統之複數條電子束照射於該曝光場內。 The electron beam apparatus of claim 74 or 75, wherein the target object is irradiated by the electron beam while moving in a first direction orthogonal to an optical axis of the electron beam optical system; the electron beam optical system having The length in the first direction is a, a rectangular exposure field having a length orthogonal to the optical axis of the electron beam optical system and a length in the second direction orthogonal to the first direction, and b; a plurality from the electron beam optical system An electron beam is irradiated into the exposure field.

如請求項76之電子束裝置，其中，該矩形曝光場之長寬比a/b為1/12~1/4。 The electron beam apparatus of claim 76, wherein the rectangular exposure field has an aspect ratio a/b of 1/12 to 1/4.

如請求項76或77之電子束裝置，其中，該曝光場係設定成包含該電子束光學系統之光軸。 The electron beam apparatus of claim 76 or 77, wherein the exposure field is set to include an optical axis of the electron beam optical system.

如請求項76至78中任一項之電子束裝置，其中，該電子束光學系統為縮小光學系統；該曝光場係設定在該電子束光學系統之像差有效區域內。 The electron beam apparatus of any one of claims 76 to 78, wherein the electron beam optical system is a reduction optical system; the exposure field is set in an aberration effective area of the electron beam optical system.

如請求項1至79中任一項之電子束裝置，其進一步具備配置該光電轉換層之電子放射面、及該電子束光學系統之真空室；於該真空室內，該複數條電子束照射於該標的物。 The electron beam apparatus according to any one of claims 1 to 79, further comprising: an electron emission surface on which the photoelectric conversion layer is disposed, and a vacuum chamber of the electron beam optical system; wherein the plurality of electron beams are irradiated in the vacuum chamber The subject matter.

如請求項80之電子束裝置，其中，該真空室包含配置該電子放射面之第1室、與配置該電子束光學系統之第2室。 The electron beam apparatus of claim 80, wherein the vacuum chamber includes a first chamber in which the electron emission surface is disposed, and a second chamber in which the electron beam optical system is disposed.

如請求項1至81中任一項之電子束裝置，其中，該複數個發光部與該電子束光學系統，分別具備複數個。 The electron beam apparatus according to any one of claims 1 to 8, wherein the plurality of light emitting sections and the electron beam optical system each have a plurality of.

如請求項1至82中任一項之電子束裝置，其進一步具備支承該標的物之可動載台；另具備控制該載台之移動、並調整照射於該標的物之該電子束之照射狀態的控制裝置。 The electron beam apparatus according to any one of claims 1 to 82, further comprising: a movable stage supporting the target; and further comprising controlling the movement of the stage and adjusting an irradiation state of the electron beam irradiated to the target Control device.

一種電子束裝置，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其具備：複數個發光部；電子束光學系統，其可將藉由該複數個發光部中至少一部分之發光產生之複數條光束照射於該光電轉換層而從該光電轉換層放射之電子，作為複數條電子束照射於該標的物；以及複數個光學構件，係配置在該複數個發光部與該光電轉換層間之光路上；該複數個光學構件係在與該電子束光學系統之光軸交叉之方向並置；該複數個光學構件之各個，可將來自該複數個發光部中至少1個發光部之光聚光，並射出該複數條光束中之1條。 An electron beam device that irradiates light to a photoelectric conversion layer and irradiates electrons generated from the photoelectric conversion layer as an electron beam to a target object, and includes: a plurality of light emitting portions; and an electron beam optical system a plurality of light beams generated by at least a part of the plurality of light-emitting portions are irradiated onto the photoelectric conversion layer, and electrons emitted from the photoelectric conversion layer are irradiated to the target as a plurality of electron beams; and a plurality of optical members are disposed in the plurality of optical members An optical path between the plurality of light emitting portions and the photoelectric conversion layer; the plurality of optical members being juxtaposed in a direction crossing an optical axis of the electron beam optical system; each of the plurality of optical members may be derived from the plurality of light The light of at least one of the light-emitting portions of the portion is concentrated, and one of the plurality of light beams is emitted.

如請求項84之電子束裝置，其中，於該複數個光學構件之各個，來自該複數個發光部中至少1個發光部之光束不透過空間射入。 The electron beam apparatus according to claim 84, wherein, in each of the plurality of optical members, a light beam from at least one of the plurality of light-emitting portions is incident through a space.

一種包含微影製程之元件製造方法：該微影製程，包含在標的物上形成線與空間圖案的動作、與使用請求項1至85中任一項之電子束裝置進行構成該線與空間圖案之線圖案之切斷的動作。 A method of manufacturing a component including a lithography process, the lithography process comprising the step of forming a line and space pattern on a target object, and the electron beam device of any one of claims 1 to 85 to form the line and space pattern The action of cutting the line pattern.

一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：藉由光學元件之複數個發光部之至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作；來自該複數個發光部各個之光，不透過空間射入該光電轉換層。 An exposure method for irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: emitting light by at least a part of a plurality of light-emitting portions of the optical element An operation of irradiating the light beam to the photoelectric conversion layer; and irradiating the electrons emitted from the photoelectric conversion layer by the plurality of light beams through the electron beam optical system as a plurality of electron beams to illuminate the target object The light from each of the plurality of light-emitting portions is incident on the photoelectric conversion layer without a space.

一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：藉由光學元件之複數個發光部之至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作；來自該複數個發光部各個之光，不透過氣體空間射入該光電轉換層。 An exposure method for irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: emitting light by at least a part of a plurality of light-emitting portions of the optical element An operation of irradiating the light beam to the photoelectric conversion layer; and irradiating the electrons emitted from the photoelectric conversion layer by the plurality of light beams through the electron beam optical system as a plurality of electron beams to illuminate the target object The light from each of the plurality of light-emitting portions is incident on the photoelectric conversion layer without passing through the gas space.

一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：藉由光學元件之複數個發光部之至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作；來自該複數個發光部各個之光，不透過真空空間射入該光電轉換層。 An exposure method for irradiating light to a photoelectric conversion layer, and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: emitting light by at least a part of a plurality of light-emitting portions of the optical element An action of the strip light irradiating the photoelectric conversion layer; and electrons emitted from the photoelectric conversion layer by the plurality of light beams being irradiated to the photoelectric conversion layer The electron beam optical system acts as a plurality of electron beams on the target object; light from each of the plurality of light emitting portions is incident on the photoelectric conversion layer without passing through a vacuum space.

一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：具有複數個發光部，藉由至少一部分兼作為配置該光電轉換層之電子放射面之真空室之間隔壁的發光元件之該複數個發光部中至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作。 An exposure method of irradiating light to a photoelectric conversion layer and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a plurality of light-emitting portions, wherein at least a portion also serves as the photoelectric conversion layer Illuminating at least a portion of the plurality of light-emitting portions of the light-emitting elements of the partition walls of the electron-emitting surface of the vacuum chamber, irradiating the plurality of light beams to the photoelectric conversion layer; and irradiating the plurality of light beams with the light-emitting layer The electrons radiated from the photoelectric conversion layer by the conversion layer are transmitted through the electron beam optical system as a plurality of electron beams to be irradiated onto the target.

一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：藉由包含具有複數個發光部之自發光型對比元件陣列之發光元件之該複數個發光部中至少一部分之發光，將複數條光束照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作。 An exposure method of irradiating light to a photoelectric conversion layer and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target, comprising: emitting light by comprising a self-luminous type contrast element array having a plurality of light emitting portions Illuminating at least a portion of the plurality of light-emitting portions of the device, irradiating a plurality of light beams to the photoelectric conversion layer, and transmitting electrons emitted from the photoelectric conversion layer by the plurality of light beams to the photoelectric conversion layer The electron beam optical system acts as a plurality of electron beams to illuminate the target.

一種曝光方法，係對光電轉換層照射光，並將從該光電轉換層產生之電子作為電子束照射於標的物，其包含：將因複數個發光部中至少一部分之發光產生之複數條光束，透過配置在該複數個發光部與該光電轉換層間之光路上之複數個光學構件之至少一部分，照射於該光電轉換層的動作；以及將藉由該複數條光束照射於該光電轉換層而從該光電轉換層放射之電子透過電子束光學系統作為複數條電子束照射於該標的物的動作；該複數個光學構件係在與該電子束光學系統之光軸交叉之方向並置；該複數個光學構件之各個，可將來自該複數個發光部中至少1個發光部之光聚光，並射出該複數條光束中之1條。 An exposure method of irradiating light to a photoelectric conversion layer and irradiating electrons generated from the photoelectric conversion layer as an electron beam to a target object, comprising: a plurality of light beams generated by light emission of at least a part of the plurality of light emitting portions, And illuminating the photoelectric conversion layer by at least a part of a plurality of optical members disposed on the optical path between the plurality of light-emitting portions and the photoelectric conversion layer; and irradiating the photoelectric conversion layer by the plurality of light beams The electrons emitted by the photoelectric conversion layer are transmitted through the electron beam optical system as a plurality of electron beams to the target object; the plurality of optical members are juxtaposed in a direction crossing the optical axis of the electron beam optical system; Each of the plurality of optical members may condense light from at least one of the plurality of light-emitting portions and emit one of the plurality of light beams.

如請求項87至92中任一項之曝光方法，其中，該標的物係一邊往與該電子束光學系統之光軸正交之第1方向移動、一邊被該電子束照射。 The exposure method according to any one of claims 87 to 92, wherein the target object is irradiated with the electron beam while moving in a first direction orthogonal to an optical axis of the electron beam optical system.

一種包含微影製程之元件製造方法：該微影製程，包含在標的物上形成線與空間圖案的動作、與使用請求項87至93中任一項之曝光方法進行構成該線與空間圖案之線圖案之切斷的動作。 A component manufacturing method including a lithography process: the lithography process includes an operation of forming a line and space pattern on a target object, and an exposure method using any one of claims 87 to 93 to form the line and space pattern The action of cutting the line pattern.

一種光電元件，其具有因光之照射而放射電子之光電轉換層，其具備：複數個發光部；光穿透構件；以及該光電轉換層，係形成在該光穿透構件之光射出側；將來自該複數個發光部中至少1個之光，不透過氣體空間照射於該光電轉換層。 A photoelectric element having a photoelectric conversion layer that emits electrons by irradiation of light, comprising: a plurality of light-emitting portions; a light-transmitting member; and the photoelectric conversion layer formed on a light-emitting side of the light-transmitting member; Light from at least one of the plurality of light-emitting portions is irradiated onto the photoelectric conversion layer without passing through a gas space.

一種光電元件，其具有因光之照射而放射電子之光電轉換層，其具備：複數個發光部；光穿透構件；以及該光電轉換層，係形成在該光穿透構件之光射出側；將來自該複數個發光部中至少1個之光，不透過真空空間照射於該光電轉換層。 A photoelectric element having a photoelectric conversion layer that emits electrons by irradiation of light, comprising: a plurality of light-emitting portions; a light-transmitting member; and the photoelectric conversion layer formed on a light-emitting side of the light-transmitting member; Light from at least one of the plurality of light-emitting portions is irradiated onto the photoelectric conversion layer without passing through a vacuum space.

如請求項95或96之光電元件，其進一步具備複數個孔徑；從該複數個發光部中之至少1個發出而通過該複數個孔徑中至少1個之光射入該光電轉換層。 The photovoltaic element according to claim 95 or 96, further comprising a plurality of apertures; and emitting light from at least one of the plurality of light-emitting portions and passing through at least one of the plurality of apertures into the photoelectric conversion layer.

如請求項97之光電元件，其具有形成該複數個孔徑之遮光層。 A photovoltaic element according to claim 97, having a light-shielding layer forming the plurality of apertures.