TW201923808A - Electron beam apparatus and exposure method, and device manufacturing method - Google Patents

Electron beam apparatus and exposure method, and device manufacturing method Download PDF

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Publication number
TW201923808A
TW201923808A TW107134439A TW107134439A TW201923808A TW 201923808 A TW201923808 A TW 201923808A TW 107134439 A TW107134439 A TW 107134439A TW 107134439 A TW107134439 A TW 107134439A TW 201923808 A TW201923808 A TW 201923808A
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light
electron beam
optical system
electron
optical
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TW107134439A
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Chinese (zh)
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佐藤真路
柴崎祐一
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日商尼康股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

An electron beam apparatus comprises: an optical device (184) that can supply a plurality of optical beams; a condensing member (187) that is positioned such that the plurality of optical beams from a plurality of locations of the optical device (184) are condensed to a first location of a photoelectric element (54); and an electron optical system that makes electrons emitted from the photoelectric element into an electron beam and uses this to bombard a target.

Description

電子束裝置及曝光方法、以及元件製造方法    Electron beam device, exposure method, and element manufacturing method   

本發明係關於電子束裝置及曝光方法、以及元件製造方法，尤其是對光電元件照射光並以從光電元件產生之電子作為電子束照射於標的物之電子束裝置及對光電元件照射光並以從光電元件產生之電子作為電子束照射於標的物之曝光方法、以及使用電子束裝置或曝光方法之元件製造方法。 The present invention relates to an electron beam device, an exposure method, and an element manufacturing method. In particular, the present invention relates to an electron beam device that irradiates light to a photoelectric element and irradiates electrons generated from the photoelectric element as an electron beam to a target object, and irradiates light to the photoelectric element and uses the An exposure method in which electrons generated from a photovoltaic element are irradiated to an object as an electron beam, and an element manufacturing method using an electron beam device or an exposure method.

近年來，提出了一種將例如使用ArF光源之液浸曝光技術與帶電粒子束曝光技術(例如電子束曝光技術)互補的加以利用之互補(Complementary)微影。於互補性微影，係藉由例如在使用ArF光源之液浸曝光中利用雙層布局(double patterning)，形成單純的線與空間圖案(以下，適當的稱L/S圖案)。接著，通過使用電子束之曝光，進行線圖案之切斷、或通孔之形成。 In recent years, a complementary lithography has been proposed in which a liquid immersion exposure technique using an ArF light source and a charged particle beam exposure technique (such as an electron beam exposure technique) are complementary and utilized. For complementary lithography, a simple line and space pattern (hereinafter, referred to as an L / S pattern as appropriate) is formed by using double patterning in liquid immersion exposure using an ArF light source, for example. Next, by using exposure using an electron beam, cutting of a line pattern or formation of a through hole is performed.

於互補性微影技術，可使用具備例如使用複數個遮蔽孔徑以進行光束之on、off之多光束光學系統的電子束曝光裝置(例如，參照專利文獻1)。然而，不限於孔徑方式，電子束曝光裝置之情形，仍有待改善之點。此外，不僅是曝光裝置，使用電子束對標的物進行加工或處理、或加工及處理之裝置、或者是檢査裝置等，亦存在待改善之點。 For the complementary lithography technology, for example, an electron beam exposure apparatus having a multi-beam optical system that uses a plurality of shielding apertures to perform on and off of a light beam can be used (for example, refer to Patent Document 1). However, it is not limited to the aperture method, and the situation of the electron beam exposure device still needs to be improved. In addition, not only the exposure device, but also the device for processing or processing the target using an electron beam, or the device for processing and processing, or an inspection device, etc., there are also points for improvement.

先行技術文獻Advance technical literature

[專利文獻1]美國專利申請公開第2015/0200074號說明書 [Patent Document 1] US Patent Application Publication No. 2015/0200074

本發明第1態樣，提供一種電子束裝置，係對光電元件照射光並以從該光電元件產生之電子作為電子束照射於標的物，其具備：光學元件，其能提供複數條光束；聚光構件，係配置成使來自該光學元件之複數位置之複數條光束聚光於該光電元件之第1位置；以及電子光學系統，係以從該光電元件放射出之電子作為電子束照射於該標的物。 According to a first aspect of the present invention, there is provided an electron beam device that irradiates light to a photoelectric element and irradiates electrons generated from the photoelectric element as an electron beam to an object. The optical element includes: an optical element capable of providing a plurality of light beams; The optical member is configured to condense a plurality of light beams from a plurality of positions of the optical element at a first position of the photoelectric element; and an electro-optical system uses electrons emitted from the photoelectric element to irradiate the electron as an electron beam Subject matter.

本發明第2態樣，提供一種電子束裝置，係對光電元件照射光，並以從該光電元件產生之電子作為電子束照射於標的物，其具備：光學元件，其能提供可個別控制之複數條光束；聚光構件，係配置成來自該光學元件之複數條光束聚光於該光電元件之第1位置；以及電子光學系統，係以從該光電元件放射出之電子作為電子束照射於該標的物。 According to a second aspect of the present invention, an electron beam device is provided, which irradiates light to a photoelectric element and irradiates electrons generated from the photoelectric element as an electron beam to a target. The optical element includes: an optical element, which can provide individually controlled A plurality of light beams; a condensing member configured to condense the plurality of light beams from the optical element at the first position of the photoelectric element; and an electron optical system irradiating electrons emitted from the photoelectric element as electron beams The subject matter.

本發明第3態樣，提供一種包含微影製程之元件製造方法：該微影製程，包含在標的物上形成線與空間圖案的動作、與使用第1態樣及第2態樣中任一態樣之電子束裝置進行構成該線與空間圖案之線圖案之切斷的動作。 According to a third aspect of the present invention, a method for manufacturing a component including a lithography process is provided. The lithography process includes an action of forming a line and a space pattern on a target, and the use of any of the first aspect and the second aspect. The aspect of the electron beam device performs a cutting operation of a line pattern constituting the line and the space pattern.

本發明第4態樣，提供一種曝光方法，係對光電元件照射光，並以從該光電元件產生之電子作為電子束照射於標的物，其包含：使來自可提供複數條光束之光學元件之複數個位置的複數條光束聚光於該光電元件之第1位置之方式以聚光構件加以聚光的動作；以及以從該光電元件放射出之電子作為電子束使用電子光學系統照射於該標的物的動作。 According to a fourth aspect of the present invention, there is provided an exposure method for irradiating light to a photovoltaic element and irradiating electrons generated from the photovoltaic element as an electron beam to an object, the method comprising: irradiating light from an optical element capable of providing a plurality of light beams; A plurality of beams at a plurality of positions are focused on the first position of the optoelectronic element to condense the light with a focusing member; and the electrons emitted from the optoelectronic element are used as electron beams to irradiate the target with an electron optical system Things.

本發明第5態樣，提供一種包含微影製程之元件製造方法：該微影製程，包含在標的物上形成線與空間圖案的動作、與使用第4態樣之曝光方法 進行構成該線與空間圖案之線圖案之切斷的動作。 According to a fifth aspect of the present invention, there is provided a device manufacturing method including a lithography process: the lithography process includes an action of forming a line and a space pattern on a target object, and the exposure method of the fourth aspect is used to constitute the line and The cutting action of the space pattern line pattern.

12‧‧‧曝光室 12‧‧‧Exposure Room

34‧‧‧第1真空室 34‧‧‧The first vacuum chamber

54‧‧‧光電元件 54‧‧‧Photoelectric element

58a‧‧‧孔徑 58a‧‧‧ aperture

58b‧‧‧孔徑 58b‧‧‧Aperture

60‧‧‧光電層 60‧‧‧Photoelectric layer

70‧‧‧電子束光學系統 70‧‧‧ electron beam optical system

70c‧‧‧靜電多極 70c‧‧‧electrostatic multipole

72‧‧‧第2真空室 72‧‧‧ 2nd vacuum chamber

82b‧‧‧成形光學系統 82b‧‧‧forming optical system

88‧‧‧雷射二極體 88‧‧‧laser diode

90‧‧‧AO偏向器 90‧‧‧AO deflector

92‧‧‧DOE 92‧‧‧DOE

142‧‧‧孔徑板 142‧‧‧Aperture plate

182‧‧‧照明系統 182‧‧‧lighting system

184‧‧‧圖案產生器 184‧‧‧Pattern generator

185p,q‧‧‧反射鏡 185 p, q ‧‧‧mirror

186‧‧‧投影光學系統 186‧‧‧Projection Optical System

187‧‧‧微透鏡陣列 187‧‧‧Micro lens array

188i，j‧‧‧微透鏡 188 i, j ‧‧‧ microlenses

1000‧‧‧曝光裝置 1000‧‧‧ exposure device

EB‧‧‧電子束 EB‧‧‧ Electron Beam

RF‧‧‧曝光場 RF‧‧‧Exposure Field

W‧‧‧晶圓 W‧‧‧ Wafer

圖1係概略顯示第1實施形態之曝光裝置之構成的圖。 FIG. 1 is a diagram schematically showing a configuration of an exposure apparatus according to a first embodiment.

圖2(A)係將從+X方向觀察之電子束光學系統之一構成例、與包含對應之光電元件之第1真空室內部之構成部分一起加以顯示的圖，圖2(B)係顯示從一Y方向觀察圖2(A)之構成的圖。 FIG. 2 (A) is a diagram showing an example of a configuration of an electron beam optical system viewed from the + X direction, and is shown together with components of a first vacuum chamber including corresponding photoelectric elements, and FIG. 2 (B) is a diagram showing FIG. 2 (A) is a view of the structure viewed from a Y direction.

圖3(A)係設於光電膠囊之光電元件之部分省略加以顯示的縱剖面圖，圖3(B)係顯示光電元件之部分省略的俯視圖。 FIG. 3 (A) is a longitudinal sectional view showing a part of the photovoltaic element provided in the photoelectric capsule omitted and shown, and FIG. 3 (B) is a plan view showing a part of the photovoltaic element omitted.

圖4係顯示第1實施形態之曝光裝置所具備之光照射裝置之一構成例的圖。 FIG. 4 is a diagram showing a configuration example of a light irradiation device included in the exposure device of the first embodiment.

圖5用以說明使用第1靜電透鏡之於X軸方向及Y軸方向之縮小倍率之修正的圖。 FIG. 5 is a diagram for explaining correction of reduction magnifications in the X-axis direction and the Y-axis direction using the first electrostatic lens.

圖6係顯示以懸吊於底板之狀態支承之45個電子束光學系統之外觀的立體圖。 FIG. 6 is a perspective view showing the appearance of 45 electron beam optical systems supported in a state of being suspended from a bottom plate.

圖7係顯示在圖案產生器之受光面上之雷射光束之照射區域、與在光電元件之面上之雷射光束之照射區域、與在像面(晶圓面)上之電子束之照射區域(曝光區域)之對應關係的圖。 FIG. 7 shows the irradiation area of the laser beam on the light receiving surface of the pattern generator, the irradiation area of the laser beam on the surface of the photovoltaic element, and the irradiation of the electron beam on the image surface (wafer surface). Map of the correspondence between regions (exposure regions).

圖8係顯示以第1實施形態之曝光裝置之控制系統為主構成之主控制裝置之輸出入關係的方塊圖。 FIG. 8 is a block diagram showing the input-output relationship of the main control device mainly composed of the control system of the exposure device of the first embodiment.

圖9係用以說明矩形場相較於正方形場之優點的圖。 FIG. 9 is a diagram for explaining the advantages of a rectangular field compared to a square field.

圖10(A)及圖10(B)係用以說明因光學系統引起之模糊及抗蝕劑模糊而產生之切割圖案之形狀變化(4角之圓弧)之修正的圖。 FIG. 10 (A) and FIG. 10 (B) are diagrams for explaining the correction of the shape change (the arc of the four corners) of the cutting pattern caused by the blur caused by the optical system and the resist.

圖11(A)及圖11(B)係用以說明複數個電子束光學系統共通之畸變之修 正的圖。 11 (A) and 11 (B) are diagrams for explaining correction of distortion common to a plurality of electron beam optical systems.

圖12(A)~圖12(D)係顯示光學圖案形成單元之各種型式之構成例的圖。 12 (A) to 12 (D) are diagrams showing configuration examples of various types of optical pattern forming units.

圖13(A)係顯示不使用孔徑之方式的說明圖、圖13(B)係顯示使用孔徑之方式的說明圖。 FIG. 13 (A) is an explanatory diagram showing a method using no aperture, and FIG. 13 (B) is an explanatory diagram showing a method using an aperture.

圖14係用以說明補償電子束光學系統作為像差所具有之像面彎曲之方法的圖。 FIG. 14 is a diagram for explaining a method of compensating the curvature of field of an electron beam optical system as an aberration.

圖15係顯示形成具有每隔1列之節距相異之孔徑列之多節距型之孔徑一體型光電元件之一例的圖。 FIG. 15 is a diagram showing an example of a multi-pitch type aperture-integrated photovoltaic element having aperture rows having pitches different in pitch from every other row.

圖16(A)~圖16(C)係顯示使用圖15之孔徑一體型光電元件，形成節距相異之線圖案之切斷用切割圖案之順序的圖。 16 (A) to 16 (C) are diagrams showing the order of cutting patterns for cutting using the aperture-integrated photoelectric element of FIG. 15 to form line patterns with different pitches.

圖17(A)係用以說明孔徑別體型光電元件之一構成例的圖、圖17(B)~圖17(E)係顯示孔徑板之各種構成例的圖。 FIG. 17 (A) is a diagram for explaining a configuration example of an aperture type photoelectric element, and FIGS. 17 (B) to 17 (E) are diagrams showing various configuration examples of an aperture plate.

圖18(A)~圖18(E)係顯示孔徑一體型光電元件之各種構成例的圖。 18 (A) to 18 (E) are diagrams showing various configuration examples of an aperture-integrated photovoltaic element.

圖19係概略顯示第2實施形態之曝光裝置之構成的圖。 FIG. 19 is a diagram schematically showing a configuration of an exposure apparatus according to a second embodiment.

圖20係將圖19之電子束光學單元加以剖開顯示的立體圖。 FIG. 20 is a perspective view showing the electron beam optical unit of FIG. 19 in a cutaway manner.

圖21係顯示圖19之電子束光學單元的縱剖面。 FIG. 21 is a longitudinal section showing the electron beam optical unit of FIG. 19. FIG.

圖22係顯示蓋收納板之部分省略的俯視圖。 Fig. 22 is a plan view showing a part of the lid storage plate omitted.

圖23(A)~(C)係用以說明光電膠囊之構成及在光電膠囊製造商之工廠內蓋構件對本體部之裝著順序的圖(其1~其3)。 FIGS. 23 (A) to (C) are diagrams (1 to 3) for explaining the structure of the photovoltaic capsule and the mounting order of the lid member to the body portion in the photovoltaic capsule manufacturer's factory.

圖24係將第2實施形態之曝光裝置之光學單元內之複數個光照射裝置與電子束光學單元一起加以顯示的圖。 24 is a diagram showing a plurality of light irradiation devices in an optical unit of an exposure device according to a second embodiment together with an electron beam optical unit.

圖25(A)係顯示從+X方向觀察圖24之光照射裝置之構成的圖、圖25(B)係顯示從-Y方向觀察圖24之光照射裝置之構成的圖。 FIG. 25 (A) is a diagram showing the structure of the light irradiation device of FIG. 24 as viewed from the + X direction, and FIG. 25 (B) is a diagram showing the structure of the light irradiation device of FIG. 24 as viewed from the -Y direction.

圖26(A)係顯示光繞射型光閥的立體圖、圖26(B)係顯示光繞射型光閥 的側視圖。 Fig. 26 (A) is a perspective view showing a light diffraction type light valve, and Fig. 26 (B) is a side view showing a light diffraction type light valve.

圖27係顯示第2實施形態之曝光裝置所具備之圖案產生器的俯視圖。 FIG. 27 is a plan view showing a pattern generator provided in the exposure apparatus according to the second embodiment.

圖28(A)係顯示從+X方向觀察圖24之電子束光學系統之構成的圖、圖28(B)係顯示從-Y方向觀察圖24之電子束光學系統之構成的圖。 FIG. 28 (A) is a diagram showing the configuration of the electron beam optical system of FIG. 24 as viewed from the + X direction, and FIG. 28 (B) is a diagram showing the configuration of the electron beam optical system of FIG. 24 as viewed from the -Y direction.

圖29係用以說明圖19之電子束光學單元之部分組裝順序的圖(其1)。 FIG. 29 is a diagram (No. 1) for explaining a partial assembling sequence of the electron beam optical unit of FIG. 19.

圖30係用以說明圖19之電子束光學單元之部分組裝順序的圖(其2)。 FIG. 30 is a diagram (No. 2) for explaining a partial assembling sequence of the electron beam optical unit of FIG. 19.

圖31係用以說明圖19之電子束光學單元之部分組裝順序的圖(其3)。 FIG. 31 is a diagram (No. 3) for explaining a partial assembling sequence of the electron beam optical unit of FIG. 19.

圖32係顯示具有備用扁帶列之圖案產生器之一例的俯視圖。 Fig. 32 is a plan view showing an example of a pattern generator having a spare flat band array.

圖33(A)及圖33(B)係用以說明修正用扁帶列的圖。 FIG. 33 (A) and FIG. 33 (B) are diagrams for explaining the flattened strip line for correction.

圖34係用以說明元件製造方法之一實施形態的圖。 FIG. 34 is a diagram for explaining an embodiment of a device manufacturing method.

《第1實施形態》     "First Embodiment"    

以下，根據圖1~圖18(E)說明第1實施形態。圖1中概略顯示了第1實施形態之曝光裝置1000之構成。曝光裝置1000，如後述般具備複數個電子束光學系統，以下，以和電子束光學系統之光軸平行的取Z軸、以在與Z軸垂直之平面內於後述曝光時晶圓W移動之掃描方向為Y軸方向、以和Z軸及Y軸正交之方向為X軸方向，以繞X軸、Y軸及Z軸之旋轉(傾斜)方向分別為θx、θy及θz方向，進行說明。 Hereinafter, the first embodiment will be described with reference to FIGS. 1 to 18 (E). FIG. 1 schematically shows the configuration of an exposure apparatus 1000 according to the first embodiment. The exposure apparatus 1000 is provided with a plurality of electron beam optical systems as described later. Hereinafter, the Z axis is taken parallel to the optical axis of the electron beam optical system, and the wafer W is moved during exposure to be described later in a plane perpendicular to the Z axis. The scanning direction is the Y-axis direction, the direction orthogonal to the Z-axis and the Y-axis is the X-axis direction, and the directions of rotation (tilt) about the X-axis, Y-axis, and Z-axis are θx, θy, and θz directions, respectively. .

曝光裝置1000，具備設置在無塵室地面F上的載台室10、配置在載台室10內部之曝光室12內的載台系統14、以及在地面F上被支承於框架16且配置在載台系統14上方的光學系統18。 The exposure apparatus 1000 includes a stage chamber 10 provided on the clean room floor F, a stage system 14 disposed in the exposure chamber 12 inside the stage chamber 10, and a frame 16 supported on the floor F and disposed on Optical system 18 above stage system 14.

載台室10，於圖1中雖省略了X軸方向兩端部之圖示，但其係可將其內部抽為真空之真空室。載台室10，具備配置在地面F上與XY平面平行的 底壁10a、兼作為載台室10之上壁(頂壁)的前述框架16、以及圍繞底壁10a之周圍並將框架16從下方支承為水平的周壁10b(圖1中，僅顯示其中之+Y側部分之一部分)。框架16及底壁10a皆由俯視矩形之板構件構成，於框架16在其中央部近旁形成有俯視圓形之開口16a。於開口16a內，配置有構成光學系統18之一部分之外觀具有梯狀之圓柱狀電子束光學單元18A之箱體19。箱體19，具有低高度之圓柱狀第1部分19a、與直徑相較於其下方之第1部分較小之第2部分19b，第2部分19b從上方***開口16a內，箱體19之直徑較大之第1部分19a從下方被支承在該開口16a周圍之框架16上面。開口16a之內周面與箱體19之第2部分19b之間，可以密封構件加以密封。於載台室10之底壁10a上配置有載台系統14。又，電子束光學單元18A之支承方法限於此方法，箱體19可以不具有直徑相異之第1部分與第2部分。此外，電子束光學單元18A可以不是具梯狀之圓柱形狀，例如可以是具梯部之角柱狀。 Although the illustration of both ends of the stage chamber 10 in the X-axis direction is omitted in FIG. 1, the stage chamber 10 is a vacuum chamber capable of evacuating the inside of the stage chamber 10. The stage chamber 10 includes a bottom wall 10a disposed on the floor F and parallel to the XY plane, the aforementioned frame 16 which also serves as an upper wall (top wall) of the stage chamber 10, and a frame 16 surrounding the bottom wall 10a from The lower support is a horizontal peripheral wall 10b (only a part of the + Y side part is shown in FIG. 1). Both the frame 16 and the bottom wall 10 a are composed of a rectangular plate member in plan view, and a circular opening 16 a in plan view is formed near the central portion of the frame 16. Inside the opening 16a, a case 19 having a ladder-shaped cylindrical electron beam optical unit 18A, which constitutes a part of the optical system 18, is arranged. Box 19, a cylindrical first part 19a with a low height, a second part 19b which is smaller than the first part below the diameter, and the second part 19b is inserted into the opening 16a from above. The diameter of the box 19 The larger first portion 19a is supported from above on the frame 16 around the opening 16a. The inner peripheral surface of the opening 16a and the second portion 19b of the case 19 can be sealed by a sealing member. A stage system 14 is disposed on the bottom wall 10 a of the stage chamber 10. In addition, the method of supporting the electron beam optical unit 18A is limited to this method, and the case 19 may not have the first portion and the second portion having different diameters. In addition, the electron beam optical unit 18A may not be a cylindrical shape having a ladder shape, and may be an angular pillar shape having a ladder portion, for example.

載台系統14，具備於底壁10a上透過複數個防振構件20被支承的平台22、於平台22上被重量抵消裝置24支承而能於X軸方向及Y軸方向分別以既定行程、例如50mm移動可能且能於其餘4自由度方向(Z軸、θx、θy及θz方向)微動的晶圓載台WST、移動晶圓載台WST的載台驅動系統26(圖1中僅顯示其中之一部分，參照圖8)、以及測量晶圓載台WST之6自由度方向之位置資訊的位置測量系統28(圖1中未圖示，參照圖18)。晶圓載台WST，係透過設置在其上面之未圖示之靜電夾頭吸附、保持晶圓。 The stage system 14 includes a platform 22 supported on the bottom wall 10a through a plurality of vibration-proof members 20, and supported on the platform 22 by a weight canceling device 24 so as to have a predetermined stroke in the X-axis direction and the Y-axis direction, for example. 50mm movement is possible and the wafer stage WST that can move in the remaining 4 degrees of freedom directions (Z-axis, θx, θy, and θz directions), and the stage drive system 26 of the mobile wafer stage WST (only one part is shown in FIG. 1, 8) and a position measurement system 28 (not shown in FIG. 1 and FIG. 18) for measuring position information in the 6-degree-of-freedom direction of the wafer stage WST. The wafer stage WST sucks and holds wafers through an electrostatic chuck (not shown) provided on the wafer stage WST.

晶圓載台WST，如圖1所示，XZ剖面為矩形框狀之構件構成，於其內部(中空部)之底面上一體的固定有具有XZ剖面為矩形框狀之軛部與磁石(未圖示)之馬達30的可動子30a，於該可動子30a之內部(中空部)***由延伸於Y軸方向之線圈單元構成之馬達30的固定子30b。固定子30b，其長邊方向之兩端連接於在平台22上移動於X軸方向之未圖示的X載台。X載台，被不會產生磁 漏之單軸驅動機構、例如使用滾珠螺桿之進給螺桿機構構成之X載台驅動系統32(參照圖8)，與晶圓載台WST一體於X軸方向以既定行程移動。又，亦可將X載台驅動系統32以具備超音波馬達作為驅動源之單軸驅動機構構成。無論何者，起因於磁漏之磁場變動對電子束之定位造成之影響是可忽視之程度。 As shown in FIG. 1, the wafer stage WST is composed of a rectangular frame-shaped member with an XZ cross section, and a yoke portion having a rectangular frame with a XZ cross section and a magnet (not shown) are integrally fixed to the bottom surface of the inside (hollow portion). The movable element 30a of the motor 30 is inserted into the movable element 30a (hollow portion). The fixed element 30b of the motor 30 is formed by a coil unit extending in the Y-axis direction. Both ends of the holder 30b in the longitudinal direction are connected to an X stage (not shown) that moves on the platform 22 in the X axis direction. The X stage is a single-axis drive mechanism that does not generate magnetic leakage, such as an X-stage drive system 32 (see FIG. 8) composed of a feed screw mechanism using a ball screw, which is integrated with the wafer stage WST in the X-axis direction to Move at a given stroke. The X stage driving system 32 may be configured as a single-axis driving mechanism including an ultrasonic motor as a driving source. In any case, the influence of the magnetic field fluctuation due to magnetic leakage on the positioning of the electron beam is negligible.

馬達30，係可相對固定子30b使可動子30a於Y軸方向以既定行程、例如以50mm移動，並能於X軸方向、Z軸方向、θx方向、θy方向及θz方向微幅移動之閉磁場型且動磁型的馬達。於本實施形態，以馬達30構成使晶圓載台WST移動於6自由度方向之晶圓載台驅動系統。以下，將晶圓載台驅動系統與馬達30使用同一符號，稱之為晶圓載台驅動系統30。 The motor 30 is capable of moving the movable element 30a with a predetermined stroke in the Y-axis direction, for example, 50 mm relative to the fixed element 30b, and closing the micro-movement in the X-axis direction, Z-axis direction, θx direction, θy direction, and θz direction. Magnetic field type and moving magnet type motor. In this embodiment, a motor 30 is used to construct a wafer stage driving system that moves the wafer stage WST in the 6-degree-of-freedom direction. Hereinafter, the wafer stage driving system and the motor 30 are designated by the same reference, and are referred to as a wafer stage driving system 30.

藉由X載台驅動系統32與晶圓載台驅動系統30，構成使晶圓載台WST分別以既定行程、例如50mm移動於X軸方向及Y軸方向，並微幅移動於其餘4自由度方向(Z軸、θx、θy及θz方向)的前述載台驅動系統26。X載台驅動系統32及晶圓載台驅動系統30，係由主控制裝置110加以控制(參照圖8)。 The X stage driving system 32 and the wafer stage driving system 30 are configured to move the wafer stage WST in the X-axis direction and the Y-axis direction with a predetermined stroke, for example, 50 mm, and slightly move in the remaining 4 degrees of freedom ( Z-axis, θx, θy, and θz directions). The X stage driving system 32 and the wafer stage driving system 30 are controlled by the main control device 110 (see FIG. 8).

XZ剖面倒逆U字狀之磁密封構件(未圖示)以將馬達30之上面及X軸方向之兩側面覆蓋的狀態，架設在設於未圖示之X載台之Y軸方向兩端部的一對凸部間。此磁密封構件，係以不會妨礙可動子30a對固定子30b之移動之狀態，***晶圓載台WST之中空部內。磁密封構件，由於係將馬達30之上面及側面於可動子30a之移動行程之全長加以覆蓋、且固定於X載台，因此在晶圓載台WST及X載台之移動範圍之全區域，可大致確實地防止磁通往上方(後述電子束光學系統側)之洩漏。 The U-shaped magnetic seal member (not shown) in the XZ cross section covers the upper surface of the motor 30 and both sides in the X-axis direction, and is installed at both ends in the Y-axis direction of the X stage that is not shown. Between a pair of convex parts. This magnetic sealing member is inserted into the hollow portion of the wafer stage WST in a state that it does not hinder the movement of the movable member 30a to the fixed member 30b. The magnetic sealing member covers the entire length of the moving stroke of the movable member 30a above and on the side of the motor 30 and is fixed to the X stage. Therefore, the entire range of the movement range of the wafer stage WST and the X stage can be Leakage from the magnetic field to the upper side (to be described later on the electron beam optical system side) is substantially prevented.

重量抵消裝置24，具有上端連接在晶圓載台WST下面之金屬製伸縮盒型空氣彈簧(以下，稱空氣彈簧)24a、與連接在空氣彈簧24a下端之由平板狀板構件構成之底板滑件24b。於底板滑件24b，設有將空氣彈簧24a內部之空氣噴出至平台22上面之軸承部(未圖示)，藉由從軸承部噴出之加壓空氣之軸承 面與平台22上面之間之靜壓(間隙內壓力)，支承重量抵消裝置24、晶圓載台WST(含可動子30a)及晶圓W之自重。此外，於空氣彈簧24a透過連接在晶圓載台WST之未圖示之配管供應壓縮空氣。底板滑件24b，透過一種差動排氣型之空氣靜壓軸承以非接觸方式被支承在平台22上，防止從軸承部噴出向平台22之空氣漏出至周圍(曝光室內)。又，實際上，於晶圓載台WST之底面設有於Y軸方向夾持空氣彈簧24a之一對支柱，設在支柱下端之板彈簧連接於空氣彈簧24a。 The weight canceling device 24 includes a metal telescopic box-type air spring (hereinafter, referred to as an air spring) 24a connected to the lower end of the wafer stage WST and a bottom plate slider 24b made of a flat plate member connected to the lower end of the air spring 24a. . A bearing portion (not shown) that sprays the air inside the air spring 24a onto the platform 22 is provided on the bottom plate sliding member 24b. The static pressure between the bearing surface of the pressurized air sprayed from the bearing portion and the upper surface of the platform 22 is provided. Pressure (pressure in the gap), the weight of the supporting weight offset device 24, the wafer stage WST (including the mover 30a), and the wafer W. The air spring 24a supplies compressed air through a pipe (not shown) connected to the wafer stage WST. The bottom plate slide 24b is supported on the platform 22 in a non-contact manner through a differential exhaust type air static pressure bearing to prevent air ejected from the bearing portion toward the platform 22 from leaking to the surroundings (exposure chamber). Actually, a pair of pillars sandwiching the air spring 24a in the Y-axis direction are provided on the bottom surface of the wafer stage WST, and a plate spring provided at the lower end of the pillar is connected to the air spring 24a.

光學系統18，具備被保持於前述框架16之電子束光學單元18A、與搭載在電子束光學單元18A上之光學單元18B。 The optical system 18 includes an electron beam optical unit 18A held by the frame 16 and an optical unit 18B mounted on the electron beam optical unit 18A.

電子束光學單元18A，如圖1所示，具備具有前述第1部分19a與第2部分19b之箱體19。第1部分19a，其外觀係低高度之圓柱狀。於第1部分19a之內部，例如圖1所示，形成有第1真空室34。第1真空室34，被構成上壁(頂壁)之由俯視圓形板構件構成之第1板36、由與第1板36相同直徑之板構件構成之構成為底壁之第2板(以下，稱底板)38、及圍繞第1板36與底板38周圍之圓筒狀之側壁部40等區劃。 As shown in FIG. 1, the electron beam optical unit 18A includes a case 19 having the first portion 19 a and the second portion 19 b. The first part 19a has a cylindrical shape with a low height. Inside the first portion 19a, for example, as shown in FIG. 1, a first vacuum chamber 34 is formed. The first vacuum chamber 34 is composed of a first plate 36 composed of a circular plate member in plan view constituting an upper wall (top wall), and a second plate constituted as a bottom wall composed of a plate member having the same diameter as the first plate 36 ( Hereinafter, it is referred to as a bottom plate 38, and a cylindrical side wall portion 40 surrounding the first plate 36 and the periphery of the bottom plate 38.

於第1板36，如圖1等所示，於XY2維方向以既定間隔形成有複數個、此處，例如以7行7列不含4角之矩陣狀配置，形成有45(=7×7-4)個俯視圓形之上下方向貫通孔36a。於此等45個貫通孔36a中，如圖2(A)及圖2(B)所示，以無間隙之狀態設置有區劃第1真空室34、由石英玻璃等構成之間隔壁構件(真空間隔壁)132，使用此真空間隔壁132將第1真空室34相對外部隔離成氣密狀態。又，構成間隔壁構件132之光穿透構件之材料不限於石英玻璃，只要是對光學單元18B所使用之光之波長具有穿透性之材料即可。 As shown in FIG. 1 and the like, a plurality of plates are formed on the first plate 36 at a predetermined interval in the XY 2-dimensional direction. Here, for example, a matrix arrangement of 7 rows and 7 columns without 4 corners is formed, and 45 (= 7 × 7-4) circular through holes 36a in a vertical direction in a plan view. Of these 45 through-holes 36a, as shown in FIG. 2 (A) and FIG. 2 (B), a partition wall member (really a first vacuum chamber 34, made of quartz glass, etc.) is provided in a gap-free state (true An empty partition wall 132, and the vacuum partition wall 132 is used to isolate the first vacuum chamber 34 from the outside into an airtight state. The material of the light transmitting member constituting the partition wall member 132 is not limited to quartz glass, and any material may be used as long as it is transparent to the wavelength of light used by the optical unit 18B.

圖2(A)及圖2(B)中一起顯示了本第1實施形態之曝光裝置1000所使用之電子束光學系統70之一構成例，與第1真空室34內之對應的光電元件54等。其中，圖2(A)係顯示從+X方向所見之構成、圖2(B)顯示從-Y方向所 見之構成。如圖2(A)及圖2(B)所示，在真空間隔壁132之既定距離下方配置有光電元件54。 2 (A) and 2 (B) show a configuration example of an electron beam optical system 70 used in the exposure apparatus 1000 according to the first embodiment, and a corresponding photoelectric element 54 in the first vacuum chamber 34. Wait. Among them, Fig. 2 (A) shows the structure seen from the + X direction, and Fig. 2 (B) shows the structure seen from the -Y direction. As shown in FIGS. 2 (A) and 2 (B), a photovoltaic element 54 is disposed below a predetermined distance of the vacuum partition wall 132.

光電元件54，如顯示光電元件54之一部分之圖3(A)的縱剖面圖所示，包含例如由石英玻璃(SiO2)構成之基材(透明板構件)56、在基材56下面以例如蒸鍍之鉻等構成之遮光膜(孔徑膜)58、以及在基材56及遮光膜58之下面側成膜(例如蒸鍍)之鹼光電膜(光電轉換膜)之層(鹼光電轉換層(鹼光電層))60。於遮光膜58形成有多數個孔徑58a。圖3(A)中雖僅顯示了光電元件54之一部分，但實際上，於遮光膜58以既定之位置關係形成有多數個孔徑58a(參照圖3(B))。孔徑58a之數量，可與後述多光束之數量相同、亦可較多光束之數量多。鹼光電層60亦配置在孔徑58a之內部，於孔徑58a中板構件56與鹼光電層60接觸。於本實施形態，板構件56、遮光膜58及鹼光電層60形成為一體，形成光電元件54之至少一部分。此外，基材56之材料不限於石英玻璃，只要是例如藍寶石等對光學單元18B所使用之光之波長具有穿透性之材料即可。 The photovoltaic element 54 includes a substrate (transparent plate member) 56 made of, for example, quartz glass (S i O 2 ), and a substrate 56 as shown in the longitudinal sectional view of FIG. Next, a layer (alkali) of a light-shielding film (aperture film) 58 made of, for example, vapor-deposited chromium, and an alkali photoelectric film (photoelectric conversion film) formed on the lower side of the substrate 56 and the light-shielding film 58 (for example, vapor deposition) Photoelectric conversion layer (alkali photoelectric layer)) 60. A plurality of apertures 58 a are formed in the light shielding film 58. Although only a part of the photovoltaic element 54 is shown in FIG. 3 (A), a plurality of apertures 58a are actually formed in the light shielding film 58 in a predetermined positional relationship (see FIG. 3 (B)). The number of the apertures 58a may be the same as the number of the multi-beams described later, or the number of the larger beams may be larger. The alkali photovoltaic layer 60 is also disposed inside the aperture 58a, and the plate member 56 is in contact with the alkali photovoltaic layer 60 in the aperture 58a. In this embodiment, the plate member 56, the light-shielding film 58, and the alkali photovoltaic layer 60 are integrally formed to form at least a part of the photovoltaic element 54. In addition, the material of the base material 56 is not limited to quartz glass, as long as it is a material that is transparent to the wavelength of light used by the optical unit 18B, such as sapphire.

鹼光電層60，係使用2種類以上之鹼金屬的多鹼光電陰極。多鹼光電陰極，係耐久性高、波長在500nm區域之綠色光且能產生電子，光電效果之量子效率QE高達10%程度為特長之光電陰極。於本實施形態，鹼光電層60係用作為藉由以雷射光(亦稱雷射束或光束)之光電效果生成電子束的一種電子鎗，因此使用轉換效率為10[mA/W]之高效率者。又，於光電元件54，鹼光電層60之電子放射面係圖3(A)中之下面、亦即與基材56之上面維相反側之面。於光電元件54之遮光膜58，以Y軸方向及X軸方向分別為行方向(行變化之方向)及列方向(列變化之方向)的矩陣狀配置，形成有m×n個孔徑58a。以下，作為一例，設m=12、n=6000。 The alkali photovoltaic layer 60 is a multi-alkali photocathode using two or more types of alkali metals. Multi-alkali photocathode is a kind of photocathode with high durability, green light in the wavelength of 500nm and can generate electrons. The quantum efficiency QE of the photoelectric effect is as high as 10%. In this embodiment, the alkali photoelectric layer 60 is used as an electron gun that generates an electron beam by using the photoelectric effect of laser light (also called a laser beam or a light beam). Therefore, a high conversion efficiency of 10 [mA / W] is used. By. In addition, in the photovoltaic element 54, the electron emission surface of the alkali photovoltaic layer 60 is the lower surface in FIG. 3 (A), that is, the surface opposite to the upper surface dimension of the base material 56. The light-shielding film 58 of the photoelectric element 54 is arranged in a matrix shape in which the Y-axis direction and the X-axis direction are the row direction (the direction of the row change) and the column direction (the direction of the column change), respectively, and m × n apertures 58a are formed. In the following, as an example, m = 112 and n = 6000.

於第1真空室34內部之光電元件54下方，如圖2(A)及圖2(B)所示，配置有引出電極112a。 Below the photoelectric element 54 inside the first vacuum chamber 34, as shown in FIG. 2 (A) and FIG. 2 (B), an extraction electrode 112a is arranged.

於底板38，如圖1等所示，形成有其中心位於複數個(本實施形態中為45個)電子束光學系統70之光軸AXe上的複數個(本實施形態中為45個)凹部38a。凹部38a，如圖2(A)及圖2(B)所示，從底板38上面具有既定深度，其內部底面形成有具縮孔部功能之貫通孔38b。以下，亦將貫通孔38b稱為縮孔部38b。關於縮孔部38b，進一步留待後敘。 As shown in FIG. 1 and the like, the bottom plate 38 is formed with a plurality of (45 in this embodiment) recesses whose centers are located on the optical axis AXe of a plurality of (45 in this embodiment) electron beam optical system 70. 38a. As shown in FIG. 2 (A) and FIG. 2 (B), the concave portion 38a has a predetermined depth from the upper surface of the bottom plate 38, and a through hole 38b having a function of a shrinkage portion is formed on the inner bottom surface. Hereinafter, the through-hole 38b is also referred to as a constricted portion 38b. The shrinkage hole portion 38b will be described later.

於底板38下面，以懸吊狀態固定有45個電子束光學系統70。圖6，係以懸吊狀態支承於底板38之45個電子束光學系統70之外觀的立體圖。又，電子束光學系統70之支承方式不限於此，例如可將45個電子束光學系統70以和底板38不同之支承構件加以支承，將該支承構件以箱體19之第2部分19b加以支承。關於電子束光學系統70，進一步留待後敘。 Below the bottom plate 38, 45 electron beam optical systems 70 are fixed in a suspended state. FIG. 6 is a perspective view of the appearance of the 45 electron beam optical systems 70 supported on the bottom plate 38 in a suspended state. The supporting method of the electron beam optical system 70 is not limited to this. For example, 45 electron beam optical systems 70 may be supported by a supporting member different from the bottom plate 38, and the supporting member may be supported by the second portion 19b of the case 19 . The electron beam optical system 70 will be described later.

箱體19之第2部分19b，如圖1所示，其外觀與第1部分相較係直徑較小、高度略高之圓柱狀。於第2部分19b之內部，形成有將45個電子束光學系統70收容於其內部之第2真空室72。第2真空室72，如圖1所示，被構成上壁(頂壁)的前述底板38、構成底壁之俯視圓形薄板狀的冷卻板74、以及具有與冷卻板74之直徑大致相同之外徑而冷卻板74固定在其下端面的圓筒狀周壁部76區劃而成。因周壁部76之上面被固定在底板38之下面，因此第1部分19a與第2部分19b一體化，據此構成箱體19。冷卻板74，除冷却功能外亦具備後述抑制成霧(fogging)的功能。 The second part 19b of the box body 19, as shown in FIG. 1, has a cylindrical shape with a smaller diameter and a slightly higher height than the first part. Inside the second portion 19b, a second vacuum chamber 72 is formed, in which 45 electron beam optical systems 70 are housed. As shown in FIG. 1, the second vacuum chamber 72 includes the bottom plate 38 constituting the upper wall (top wall), a circular thin plate-like cooling plate 74 in plan view constituting the bottom wall, and a substantially same diameter as the cooling plate 74. A cylindrical peripheral wall portion 76 having an outer diameter and a cooling plate 74 fixed to a lower end surface thereof is divided. Since the upper surface of the peripheral wall portion 76 is fixed to the lower surface of the bottom plate 38, the first portion 19a and the second portion 19b are integrated to form the cabinet 19 accordingly. In addition to the cooling function, the cooling plate 74 also has a function of suppressing fogging described later.

第1真空室34與第2真空室72，可分別將內部抽成真空。又，可設置與將第1真空室34抽成真空之第1真空泵不同之將第2真空室72抽成真空之第2真空泵，或者亦可使用共通之真空泵將第1真空室34與第2真空室72抽成真空。此外，第1真空室34之真空度與第2真空室72之真空度可以不同。再者，為進行維修保養等，可使第1真空室34與第2真空室72中之一方為大氣壓空間，另一方為真空空間。於本實施形態，雖可設置縮孔部38b以使第1真空室34之真空度與 第2真空室72之真空度相異，但亦可不設置縮孔部38b等，而使第1真空室34與第2真空室72實質為1個真空室。 Each of the first vacuum chamber 34 and the second vacuum chamber 72 can be evacuated to the inside. In addition, a second vacuum pump for evacuating the second vacuum chamber 72 may be provided instead of the first vacuum pump for evacuating the first vacuum chamber 34, or the first vacuum chamber 34 and the second vacuum pump may be connected using a common vacuum pump. The vacuum chamber 72 is evacuated. The degree of vacuum of the first vacuum chamber 34 and the degree of vacuum of the second vacuum chamber 72 may be different. For maintenance and the like, one of the first vacuum chamber 34 and the second vacuum chamber 72 may be an atmospheric pressure space, and the other may be a vacuum space. In this embodiment, although the shrinkage hole portion 38b may be provided to make the vacuum degree of the first vacuum chamber 34 different from the vacuum degree of the second vacuum chamber 72, the shrinkage hole portion 38b or the like may be omitted to provide the first vacuum chamber. 34 and the second vacuum chamber 72 are substantially one vacuum chamber.

光學單元18B，如圖1所示，具備搭載在電子束光學單元18A上之鏡筒(箱體)78、與收納在鏡筒78內之複數個(本實施形態中為45個)光照射裝置(亦可稱光學系統)180。45個光照射裝置180，在鏡筒78之內部，係以和45個真空間隔壁132及貫通孔36a、以及45個電子束光學系統70分別對應之配置，配置在XY平面內。鏡筒78內部之壓力為大氣壓、或較大氣壓略為正壓。 The optical unit 18B, as shown in FIG. 1, includes a lens barrel (box) 78 mounted on the electron beam optical unit 18A, and a plurality of (45 in this embodiment) light irradiation devices housed in the lens barrel 78. (Also referred to as an optical system) 180. 45 light irradiating devices 180 are arranged inside the lens barrel 78 corresponding to 45 vacuum partition walls 132 and through holes 36a, and 45 electron beam optical systems 70, respectively. Arranged in the XY plane. The pressure inside the lens barrel 78 is atmospheric pressure, or a relatively large pressure is slightly positive.

45個光照射裝置180之各個係與45個光電元件54對應設置，來自光照射裝置180之至少1條光束(以下，適當的稱雷射光束或射束)透過光電元件54之孔徑58a照射於鹼光電層(以下，簡稱為光電層)60。又，光照射裝置180之數量與光電元件54之數量可以不相等。例如光照射裝置180之數量可多於光電元件54之數量。 Each of the 45 light irradiation devices 180 is provided correspondingly to the 45 photoelectric elements 54. At least one light beam (hereinafter, appropriately referred to as a laser beam or beam) from the light irradiation device 180 is irradiated through the aperture 58a of the photoelectric element 54 An alkali photovoltaic layer (hereinafter, simply referred to as a photovoltaic layer) 60. In addition, the number of light irradiation devices 180 and the number of photoelectric elements 54 may be different. For example, the number of the light irradiation devices 180 may be more than the number of the photoelectric elements 54.

圖4中一起顯示了光照射裝置180之一構成例與對應之光電元件54等。圖4顯示從+X方向所見之構成。 An example of the configuration of the light irradiation device 180 and the corresponding photoelectric element 54 and the like are shown together in FIG. 4. Figure 4 shows the structure seen from the + X direction.

光照射裝置180，如圖4所示，具有照明系統182、產生複數條光束之圖案產生器184、以及投影光學系統186。圖案產生器184可產生經圖案化之光。圖案產生器184，亦可稱之為是將往既定方向行進之光的振幅、相位及偏光狀態空間上加以調變後射出之空間光調變器。此外，亦可將圖案產生器稱為光學元件。 As shown in FIG. 4, the light irradiation device 180 includes an illumination system 182, a pattern generator 184 that generates a plurality of light beams, and a projection optical system 186. The pattern generator 184 may generate a patterned light. The pattern generator 184 can also be referred to as a spatial light modulator that modulates the amplitude, phase, and polarization state of light traveling in a predetermined direction and emits it. In addition, the pattern generator may be referred to as an optical element.

照明系統182，具備光源部182a與照明光學系統182b。光源部182a，包含：連續振盪出作為光源之可見光或可見光附近之波長、例如波長365nm之雷射光的雷射二極體88、與配置在此雷射光之光路上的AO偏向器(亦稱為AOD或光偏向元件)90。AO偏向器90，此處其功能係作為切換元件，用於使雷射光間歇發光。亦即，光源部182a係一可使波長365nm之雷射光(雷射射束)LB 間歇性發光的光源部。又，光源部82a之發光工作比(duty ratio)可藉由例如控制AO偏向器90來加以變更。作為切換元件，不限於AO偏向器，亦可以是AOM(聲光調變元件)。此外，亦可使雷射二極體88本身間歇性發光。此外，照明系統182可以不具備光源部182a，亦可在裝置外部配置光源部。 The illumination system 182 includes a light source unit 182a and an illumination optical system 182b. The light source unit 182a includes a laser diode 88 that continuously oscillates visible light as a light source or a wavelength near the visible light, such as laser light having a wavelength of 365 nm, and an AO deflector (also referred to as AOD or light deflection element) 90. The AO deflector 90 functions here as a switching element for intermittently emitting laser light. That is, the light source section 182a is a light source section that can intermittently emit laser light (laser beam) LB having a wavelength of 365 nm. The duty ratio of the light source unit 82a can be changed by, for example, controlling the AO deflector 90. The switching element is not limited to an AO deflector, and may be an AOM (Acousto-Optic Modulation Element). In addition, the laser diode 88 itself may be caused to emit light intermittently. The lighting system 182 may not include the light source section 182a, and the light source section may be disposed outside the device.

照明光學系統182b，具有：使雷射光束LB之剖面形狀成為正方形(或X軸方向長度較Y軸方向長度略長之矩形)剖面之方式使雷射光束LB之剖面形狀變形的擴束器181、以及反射來自擴束器181之雷射光束以使其行進方向變化為-X方向、亦即使雷射光束之光路彎折90度之彎折鏡(mirror)183。彎折鏡183具有相對XY平面及XZ平面成45度(π/4)之反射面。 The illumination optical system 182b includes a beam expander 181 that deforms the cross-sectional shape of the laser beam LB so that the cross-sectional shape of the laser beam LB becomes a square (or a rectangular shape with a length longer in the X-axis direction than the Y-axis direction). And a mirror 183 that reflects the laser beam from the beam expander 181 so that its traveling direction changes to the -X direction, even if the optical path of the laser beam is bent by 90 degrees. The bending mirror 183 has a reflecting surface formed at 45 degrees (π / 4) with respect to the XY plane and the XZ plane.

本實施形態中，作為圖案產生器184，係使用與彎折鏡183之反射面大致平行配置之作為反射鏡陣列之一種的數位微反射鏡元件(DMD)。作為圖案產生器184，不限於DMD，亦可使用其他反射鏡陣列、或具有柵狀光閥(Grating Light Valve，GLA)等其他複數個可動反射元件之空間光調變器。圖案產生器184，可產生例如由明暗圖案構成之光學圖案。以下，使用與圖案產生器相同符號，記載為DMD184。 In this embodiment, as the pattern generator 184, a digital micromirror element (DMD), which is a type of mirror array, which is arranged substantially parallel to the reflecting surface of the bending mirror 183, is used. The pattern generator 184 is not limited to the DMD, and it is also possible to use other reflector arrays or a spatial light modulator having a plurality of movable reflective elements such as a Grating Light Valve (GLA). The pattern generator 184 can generate an optical pattern composed of, for example, a light and dark pattern. Hereinafter, the same symbol as that of the pattern generator will be used and described as DMD184.

DMD184，具有K=P×Q=αi×βi個反射鏡185p，q。圖4中雖顯示了DMD184，例如為α=β=4、且i=i=4之情形，亦即具有K=16×16=256個反射鏡185p，q(p=1~16、q=1~16)之情形，但DMD184，實際上具有多數個反射鏡185p，q。 DMD184 has K = P × Q = αi × βi mirrors 185 p, q . Although DMD184 is shown in FIG. 4, for example, α = β = 4 and i = i = 4, that is, K = 16 × 16 = 256 mirrors 185 p, q (p = 1 ~ 16, q = 1 ~ 16), but DMD184 actually has a majority of mirrors 185 p, q .

DMD184，於本實施形態中，具有：具有相對XY平面及XZ平面成45度(π/4)之面(以下，為方便起見，稱基準面)的基座構件184A、在基座構件184A之基準面上配置成例如P行Q列之矩陣狀的例如K(=P×Q)個反射鏡185p,q(p=1~P、q=1~Q)、以及包含將各反射鏡185p,q個別驅動的K個致動器的驅動部(圖示省略)。DMD184，可藉由調整複數個反射鏡185p,q相對基準面之 傾斜，而實質形成與基準面平行之大的反射面。又，基座構件184A之基準面，可以不是相對XY平面及XZ平面成45度，只要配合其角度決定照明系統182、後述之投影光學系統186、及後述之聚光構件(微透鏡陣列)等之構成、配置即可。 DMD184, in this embodiment, has a base member 184A having a surface (hereinafter, referred to as a reference plane for convenience) at 45 degrees (π / 4) with respect to the XY plane and the XZ plane, and the base member 184A For example, K (= P × Q) mirrors 185 p, q (p = 1 ~ P, q = 1 ~ Q) are arranged in a matrix form such as P rows and Q columns on the reference plane, and each mirror is included. 185 p, q drive unit for K actuators (not shown). DMD184, by adjusting the tilt of the plurality of mirrors 185 p, q relative to the reference plane, a large reflecting surface substantially parallel to the reference plane can be formed. In addition, the reference plane of the base member 184A may not be 45 degrees with respect to the XY plane and the XZ plane, as long as the illumination system 182, the projection optical system 186 described below, and the light collecting member (microlens array) described later, etc. are determined in accordance with the angle. It can be configured and configured.

DMD184之各反射鏡185p,q，例如可繞旋轉軸旋動，並可將其反射面相對基準面之傾斜角度，在以各反射鏡反射之光束射入投影光學系統186之第1狀態(on狀態)、與以各反射鏡反射之光束不射入投影光學系統186之第2狀態(of)狀態)之間，透過驅動部進行切換設定。驅動部，包含例如壓電元件等之致動器，各個反射鏡185p,q被致動器驅動而能以非常高之回應動作。驅動部係根據來自主控制裝置110(參照圖8)之指示以控制部11(參照圖8)加以控制。 Each mirror 185 p, q of DMD184 can be rotated around a rotation axis, for example, and the inclination angle of its reflection surface with respect to the reference plane can enter the projection optical system 186 in the first state of the light beam reflected by each mirror ( On state), and the second state (of) state in which the light beam reflected by each mirror does not enter the projection optical system 186, is switched and set by the driving unit. The driving unit includes an actuator such as a piezoelectric element. Each of the mirrors 185 p and q is driven by the actuator and can operate with a very high response. The drive unit is controlled by the control unit 11 (see FIG. 8) in accordance with an instruction from the main control device 110 (see FIG. 8).

於本實施形態之曝光裝置1000，在從DMD184朝向投影光學系統186之光束之光路上配置有聚光構件之一種的微透鏡陣列187。微透鏡陣列187，具有對應光電元件54之m×n個孔徑58a，分別以Y軸方向及X軸方向為行方向(行變化之方向)、列方向(列變化之方向)，配置成m行n列矩陣狀之m×n個聚光元件之一種的微透鏡188i，j(i=1~m、j=1~n)。又，微透鏡陣列187不限於複數個微透鏡188i，j蓄積構成之形態，亦可以是於1個光穿透性基板藉由蝕刻等形成複數個透鏡面之單體(Monolithic)形態者。此外，各微透鏡188i，j之透鏡面可以是球面、亦可以是非球面。於本實施形態，係配置成將各個微透鏡188i，j之光軸AXci，j相對投影光學系統186之物體面(第1面)成垂直。換言之，各個微透鏡188i，j之光軸AXci，j與投影光學系統186之光軸AXo平行。又，亦可以是微透鏡188i，j之光軸AXci，j之1條與投影光學系統186之光軸AXo一致。 In the exposure apparatus 1000 of this embodiment, a microlens array 187, which is a light-condensing member, is arranged on the light path of the light beam from the DMD 184 toward the projection optical system 186. The microlens array 187 has m × n apertures 58a corresponding to the photoelectric elements 54 and is arranged in m rows with the Y-axis direction and the X-axis direction as the row direction (the direction of the row change) and the column direction (the direction of the column change). A microlens 188 i, j (i = 1 ~ m, j = 1 ~ n) of a matrix of n columns in a matrix of m × n focusing elements. In addition, the microlens array 187 is not limited to a configuration in which a plurality of microlenses 188 i, j are accumulated, and may be a monolithic configuration in which a plurality of lens surfaces are formed on a light-transmitting substrate by etching or the like. In addition, the lens surfaces of the microlenses 188 i, j may be spherical or aspherical. In this embodiment, the optical axes AXc i, j of the microlenses 188 i, j are arranged so as to be perpendicular to the object surface (first surface) of the projection optical system 186. In other words, the optical axis AXc i, j of each micro lens 188 i, j is parallel to the optical axis AXo of the projection optical system 186. Alternatively , one of the optical axes AXc i, j of the microlenses 188 i, j may coincide with the optical axis AXo of the projection optical system 186.

DMD184之K個反射鏡185p,q，與微透鏡陣列187之複數個(m×n個)微透鏡188i，j之配置對應，以和Y軸方向及X軸方向分別對應之方向分別為行方向(行變化之方向)、列方向(列變化之方向)配置。於本實施形態，DMD184之K個反射鏡185p,q，被分為與m×n個微透鏡188i，j對應、分別由α×β個反射鏡185p,q 構成之m×n群，可就每一群在on狀態與off狀態間切換。來自1個群所屬之α×β個反射鏡185p,q之光束(來自DMD184之複數位置之光束)，射入對應之1個微透鏡188i，j而聚光。於本實施形態中，微透鏡陣列187係配置在DMD184與投影光學系統186之間，來自DMD184之光，藉由微透鏡陣列187而聚光於第1面、此處為投影光學系統186之物體面內。例如，來自設定為on狀態之第1群所屬之α×β個反射鏡185p,q之複數條光束，藉由對應之第1微透鏡188i，j而聚光於第1面、此處為投影光學系統186之物體面中之1個位置(第1中間位置)。又，與第1群不同之第2群為on狀態之情形時，來自第2群所屬之複數個反射鏡185p,q之複數條光束藉由對應之第2微透鏡188i，j，聚光在投影光學系統186之物體面中與第1中間位置不同之位置(第2中間位置)。此外，如後所述，on狀態之群所屬之複數個反射鏡185p,q之至少1個可以是off狀態。亦即，來自on狀態之群所屬之複數個反射鏡185p,q之至少1個之反射光可以不射入對應之微透鏡。 The K mirrors 185 p, q of DMD184 correspond to the configuration of a plurality of (m × n) microlenses 188 i, j of the microlens array 187, and the directions corresponding to the Y-axis direction and the X-axis direction are respectively The row direction (the direction in which the rows change) and the column direction (the direction in which the columns change) are arranged. In this embodiment, the K mirrors 185 p, q of the DMD184 are divided into m × n groups corresponding to m × n microlenses 188 i, j , which are respectively composed of α × β mirrors 185 p, q . , You can switch between the on state and the off state for each group. The light beams from the α × β mirrors 185 p, q to which a group belongs (beams from a plurality of positions of the DMD 184) are incident on a corresponding one of the microlenses 188 i, j and condensed. In this embodiment, the micro lens array 187 is disposed between the DMD 184 and the projection optical system 186. The light from the DMD 184 is focused by the micro lens array 187 on the first surface, which is the object of the projection optical system 186. Inside. For example, a plurality of light beams from the α × β mirrors 185 p, q to which the first group set to the on state is focused on the first surface through the corresponding first microlens 188 i, j This is one position (first intermediate position) on the object plane of the projection optical system 186. When the second group different from the first group is on , the plurality of light beams from the plurality of mirrors 185 p and q to which the second group belongs are focused by the corresponding second microlens 188 i, j . The position of the light on the object plane of the projection optical system 186 is different from the first intermediate position (the second intermediate position). In addition, as described later, at least one of the plurality of mirrors 185 p and q to which the group in the on state belongs may be in the off state. That is, the reflected light from at least one of the plurality of reflectors 185 p, q to which the on-state group belongs may not enter the corresponding microlenses.

另一方面，來自off狀態之群所屬之α×β個反射鏡185p,q之光束，不會射入微透鏡陣列187及投影光學系統186之任一方。因此，在投影光學系統186之物體面，可形成因微透鏡而使光束聚光之區域(以下，為方便起見，稱明區域)、與光束不聚光之區域(以下，為方便起見，稱暗區域)，其分布可藉由DMD184之控制而任意變更。在投影光學系統186之物體面上之明區域與暗區域之分布，亦可稱為在投影光學系統186之物體面上由明區域與暗區域構成之明暗圖案。此外，亦可設置吸收從off狀態之群所屬之α×β個反射鏡185p,q而來之光束的光束阻尼器。 On the other hand, the light beam from the α × β mirrors 185 p, q to which the group in the off state belongs does not enter either of the microlens array 187 and the projection optical system 186. Therefore, on the object surface of the projection optical system 186, an area where the light beam is condensed by the micro lens (hereinafter, referred to as a region for convenience), and an area where the light beam is not condensed (hereinafter, for convenience) may be formed. , Called dark area), its distribution can be arbitrarily changed by the control of DMD184. The distribution of light and dark areas on the object surface of the projection optical system 186 can also be referred to as a light and dark pattern composed of light and dark areas on the object surface of the projection optical system 186. In addition, a beam damper may be provided that absorbs the light beams from the α × β mirrors 185 p, q to which the group in the off state belongs.

本實施形態中，投影光學系統186包含具有沿光軸AXo配置之透鏡186a、186b之複數個透鏡，例如係具有投影倍率1/4之縮小光學系統。投影光學系統186，使第1面(物體面)與光電層60之光射入面(例如，圖3之基材56下面)或其近旁之面共軛。亦即，聚光在第1面之光束，藉由投影光學系統186 透過真空間隔壁132投影(聚光)於光電層60之光射入面(例如，圖3之基材56下面)或其近旁之面，通過形成在基材56下面之複數個孔徑58a中至少1個之光束射入光電層60。例如，來自被設定為on狀態之第1群所屬之α×β個反射鏡185p,q之複數條光束，藉由對應之第1微透鏡188i，j聚光在第1面上之第1中間位置，來自第1中間位置之光束藉由投影光學系統186投影(聚光)於光電層60之光射入面或其近旁之面之第1位置。又，在與第1群不同之第2群被設定為on狀態之情形時，來自第2群所屬之α×β個反射鏡185p,q之光束藉由對應之第2微透鏡188i，j而聚光於第1面上之第2中間位置，來自第2中間位置之光束藉由投影光學系統186而投影(聚光)於光電層60之光射入面、或其近旁之面內之與第1位置不同之第2位置。本實施形態中，係以光電層60之射入面或其近旁之面與微透鏡188i，j之光軸AXci，j垂直之方式，配置光電元件54。此外，投影光學系統不限於折射型光學系統，可以是反射型光學系統、亦可以是折返射型光學系統。又，以下之說明中，孔徑58a雖係於X軸方向長之矩形，但亦可以是於Y軸方向長之矩形、或正方形，亦可以是多角形、橢圓等其他形狀。 In this embodiment, the projection optical system 186 includes a plurality of lenses having lenses 186a and 186b arranged along the optical axis AXo, and is, for example, a reduction optical system having a projection magnification of 1/4. The projection optical system 186 conjugates the first surface (object surface) with the light incident surface of the photovoltaic layer 60 (for example, below the base material 56 in FIG. 3) or a surface adjacent thereto. That is, the light beam condensed on the first surface is projected (condensed) by the projection optical system 186 through the vacuum partition wall 132 onto the light incident surface of the photoelectric layer 60 (for example, under the substrate 56 in FIG. 3) or A light beam passing through at least one of the plurality of apertures 58 a formed below the base material 56 enters the photovoltaic layer 60 on the nearby surface. For example, a plurality of light beams from the α × β mirrors 185 p, q to which the first group set to the on state belongs are focused on the first surface by the corresponding first microlens 188 i, j The 1 intermediate position is the first position where the light beam from the first intermediate position is projected (condensed) by the projection optical system 186 onto the light incident surface of the photoelectric layer 60 or a surface adjacent thereto. When the second group different from the first group is set to the on state , the light beams from the α × β mirrors 185 p, q to which the second group belongs are transmitted through the corresponding second microlens 188 i, j and focused on the second intermediate position on the first surface, and the light beam from the second intermediate position is projected (condensed) by the projection optical system 186 on the light incident surface of the photoelectric layer 60, or in a nearby surface thereof The second position is different from the first position. In this embodiment, the photoelectric element 54 is arranged such that the incident surface of the photoelectric layer 60 or a surface adjacent thereto is perpendicular to the optical axes AXc i, j of the microlenses 188 i, j . In addition, the projection optical system is not limited to a refractive optical system, and may be a reflective optical system or a retroreflective optical system. In the following description, although the aperture 58a is a rectangle that is long in the X-axis direction, it may be a rectangle or a square that is long in the Y-axis direction, or other shapes such as a polygon and an ellipse.

又，本實施形態中，投影光學系統186亦可以說是將形成在其物體面、亦即形成在來自微透鏡188i，j(i=1~m、j=1~n)之光束聚光之面(第1面)的明暗圖案，透過真空間隔壁132以例如1/4之投影倍率，縮小投影於光電元件54。此處，投影光學系統186之投影倍率不限於1/4之縮小倍率，例如可以是等倍、或放大倍率。 In addition, in this embodiment, the projection optical system 186 can be said to condense the light beam formed on the object surface, that is, formed from the micro lens 188 i, j (i = 1 ~ m, j = 1 ~ n) The light-dark pattern on the first surface (the first surface) is reduced to be projected onto the photovoltaic element 54 through the vacuum partition wall 132 at a projection magnification of, for example, 1/4. Here, the projection magnification of the projection optical system 186 is not limited to a reduction magnification of 1/4, and may be, for example, equal magnification or magnification.

45個光照射裝置180之各個，具備可調整投影光學系統186之光學特性的光學特性調整裝置87。如圖4所示，於投影光學系統186並設有光學特性調整裝置87。光學特性調整裝置87，於本實施形態，可藉由移動構成投影光學系統186之一部分之光學元件、例如移動透鏡186a，變更投影光學系統186之光學特性。本實施形態中，藉由移動透鏡186a可至少變更X軸方向之影倍率(倍 率)。作為光學特性調整裝置87，可使用例如變更在構成投影光學系統16之複數個透鏡間形成之氣密空間之氣壓的裝置。此外，作為光學特性調整裝置87，亦可使用使構成投影光學系統16之光學構件變形的裝置、或對構成投影光學系統16之光學構件賦予熱分布的裝置。又，圖4中，雖僅顯示圖中之1個光照射裝置180所具備之光學特性調整裝置87，但實際上，於所有的光照射裝置180設有光學特性調整裝置87，光學特性調整裝置87之各個根據主控制裝置110之指示，由控制部11加以控制(參照圖8)。又，複數個光照射裝置180之至少1個可不具備光學特性調整裝置87。 Each of the 45 light irradiation devices 180 includes an optical characteristic adjustment device 87 capable of adjusting the optical characteristics of the projection optical system 186. As shown in FIG. 4, an optical characteristic adjustment device 87 is provided on the projection optical system 186. In the present embodiment, the optical characteristic adjusting device 87 can change the optical characteristics of the projection optical system 186 by moving an optical element constituting a part of the projection optical system 186, such as moving the lens 186a. In this embodiment, at least the shadow magnification (magnification) in the X-axis direction can be changed by moving the lens 186a. As the optical characteristic adjusting device 87, for example, a device that changes the air pressure of an airtight space formed between a plurality of lenses constituting the projection optical system 16 can be used. In addition, as the optical characteristic adjustment device 87, a device that deforms an optical member constituting the projection optical system 16 or a device that imparts heat distribution to the optical member constituting the projection optical system 16 may be used. In FIG. 4, although only the optical characteristic adjustment device 87 included in one light irradiation device 180 in the figure is shown, in fact, all the light irradiation devices 180 are provided with the optical characteristic adjustment device 87 and the optical characteristic adjustment device. Each of 87 is controlled by the control unit 11 according to an instruction from the main control device 110 (see FIG. 8). In addition, at least one of the plurality of light irradiation devices 180 may not include the optical characteristic adjustment device 87.

從光電元件54，因通過複數個孔徑58a之至少1個之光束之照射而產生電子，藉由具有縮小倍率1/50之電子束光學系統70而作為電子束照射於像面(對齊於像面之晶圓面)上之曝光場。 From the photoelectric element 54, electrons are generated by irradiation of at least one light beam with a plurality of apertures 58a, and an electron beam is irradiated onto the image plane (aligned to the image plane) by an electron beam optical system 70 having a reduction magnification of 1/50. Wafer surface).

本實施形態之曝光裝置1000，係以步進掃描(step & scan)方式進行對晶圓之曝光。 The exposure apparatus 1000 of this embodiment performs exposure on a wafer in a step & scan method.

於本實施形態之曝光裝置1000，係將照射於光電元件54之複數條光束之各個，從來自同一群中所含之α×β個反射鏡185p，q之光加以生成。關於此點，於以上說明中，係設定為與m×n個微透鏡188i，j對應之分為m×n群之各群所屬之α×β個反射鏡185p,q，同時為on狀態或off狀態。然而，各群所屬之α×β個反射鏡185p,q之各個，可個別的在on狀態與off狀態間切換。因此，藉由個別控制同一群中所含之a×b個反射鏡185p，q，使α×β個反射鏡185p，q中之一部分為off狀態、亦即藉由調整on狀態之反射鏡185p，q之數量，即能控制射入與該群對應之微透鏡188i，j之光束數量，據此，即能進行以該微透鏡聚光、透過對應之孔徑照射於光電層60之光束強度(例如，照射於前述第1位置之光束強度、聚光於第1位置之複數條光束之累積強度)之調整(變更)。如此，即能在不使用後述照度分布調整元件等之情形下，調整聚光於前述第1位置之複數條光束之累積強度，而獲得 與使用照度分布調整元件等來將圖案產生器184之受光面分割為複數個之情形時同等以上之效果。亦即，可對複數條光束之至少1個個別的進行強度調整，因此與使用照度分布調整元件等來進行圖案產生器184之受光面之每一分割區域之照度分布的情形相較，能進行更細微之光束之強度分布調整。此外，藉由對複數條、例如對m×n條光束個別的進行強度調整，即能將因該複數條光束之照射而以來自光電元件54之光電層60之電子生成之複數條電子束之強度，就每一電子束進行調整。 In the exposure apparatus 1000 of this embodiment, each of the plurality of light beams irradiated on the photoelectric element 54 is generated from light from the α × β mirrors 185 p, q included in the same group. In this regard, in the above description, it is set to the α × β mirrors 185 p, q to which m × n groups corresponding to m × n microlenses 188 i, j are divided into m × n groups, and at Status or off status. However, each of the α × β mirrors 185 p, q to which each group belongs can be individually switched between the on state and the off state. Therefore, by individually controlling the a × b mirrors 185 p, q included in the same group, one of the α × β mirrors 185 p, q is in the off state, that is, by adjusting the reflection in the on state. The number of mirrors 185 p, q , that is , the number of light beams entering the corresponding micro lens 188 i, j can be controlled. Based on this, the micro lens can be focused and irradiated to the photoelectric layer 60 through the corresponding aperture. Adjustment (change) of the beam intensity (for example, the intensity of the beam irradiated at the first position and the cumulative intensity of the plurality of beams condensed at the first position). In this way, it is possible to adjust the cumulative intensity of the plurality of light beams condensed at the aforementioned first position without using an illumination distribution adjustment element and the like described later, and obtain and use the illumination distribution adjustment element and the like to receive light from the pattern generator 184. In the case where the surface is divided into a plurality of areas, the same effect or more can be obtained. That is, since intensity adjustment can be performed on at least one of the plurality of light beams individually, it is possible to perform the illuminance distribution of each divided area of the light-receiving surface of the pattern generator 184 using an illuminance distribution adjustment element or the like. Finer adjustment of the intensity distribution of the beam. In addition, by individually adjusting the intensity of a plurality of beams, for example, m × n beams, it is possible to convert the plurality of electron beams generated by the electrons from the photoelectric layer 60 of the photoelectric element 54 due to the irradiation of the plurality of beams. Intensity is adjusted for each electron beam.

本實施形態中，投影光學系統186，係藉由將來自圖案產生器184之光投射於光電元件54，而將通過複數個、例如通過m×n=12×6000=72000個孔徑58a之至少1個之光束照射於光電層60。亦即，為照射光電層60而從圖案產生器184射出之光束，透過對應之微透鏡188i，j及孔徑58a照射於光電層60，未照射於光電層60之光束不照射於對應之微透鏡，當然亦不會照射於投影光學系統186。 In this embodiment, the projection optical system 186 projects the light from the pattern generator 184 onto the photoelectric element 54 and passes at least one of the plurality of apertures 58a through, for example, m × n = 12 × 6000 = 72000 apertures. Each of the light beams irradiates the photoelectric layer 60. That is, the light beam emitted from the pattern generator 184 for illuminating the photoelectric layer 60 is irradiated to the photoelectric layer 60 through the corresponding micro lens 188 i, j and the aperture 58 a. The light beam not irradiated to the photoelectric layer 60 is not irradiated to the corresponding micro lens. Of course, the lens does not illuminate the projection optical system 186.

又，亦可在微透鏡陣列187與真空間隔壁132之間(例如，投影光學系統186之內部)，設置可變更被微透鏡陣列187聚光、透過孔徑58a照射於光電層60之複數條光束中至少1個之強度的強度調變元件。照射於光電層60之複數條光束之強度變更，包含使複數條光束中之部分光束之強度為零的變更。此外，亦可在微透鏡陣列187與真空間隔壁132之間，裝備可變更照射於光電層60之複數條光束之至少1個之相位的相位調變元件、或可變更偏光狀態的偏光調變元件等。 In addition, a plurality of light beams that can be condensed by the microlens array 187 and irradiated to the photoelectric layer 60 through the aperture 58a may be provided between the microlens array 187 and the vacuum partition wall 132 (for example, inside the projection optical system 186). An intensity modulation element having an intensity of at least one of them. The change in the intensity of the plurality of light beams irradiated to the photoelectric layer 60 includes a change in which the intensity of a part of the plurality of light beams becomes zero. In addition, between the microlens array 187 and the vacuum partition wall 132, a phase modulation element that can change the phase of at least one of the plurality of light beams irradiated to the photoelectric layer 60 or a polarization modulation that can change the polarization state can be provided. Components, etc.

由圖4清楚可知，於本實施形態，照明系統182所具有之光學系統之光軸AXi與投影光學系統186之光軸(與最終光學元件透鏡186b之光軸一致)AXo，雖皆與Z軸平行，但於Y軸方向錯開既定距離(偏置、offset)。又，照明系統182所具有之光學系統之光軸AXi與投影光學系統之光軸AXo可以不是平 行。 It is clear from FIG. 4 that in this embodiment, the optical axis AXi of the optical system of the illumination system 182 and the optical axis of the projection optical system 186 (which is the same as the optical axis of the final optical element lens 186b) AXo, although they are both in the Z axis Parallel but offset by a predetermined distance (offset, offset) in the Y-axis direction. The optical axis AXi of the optical system included in the illumination system 182 and the optical axis AXo of the projection optical system may not be parallel.

電子束光學系統70，如圖2(A)及圖2(B)所示，具有鏡筒104、由被保持於鏡筒104之一對電磁透鏡70a、70b構成之物鏡、以及靜電多極70c。電子束光學系統70之物鏡與靜電多極70c，係配置在將複數個光束LB照射於光電元件54而藉由光電轉換從光電層60放射(射出)之電子(電子束EB)之射束路上。一對電磁透鏡70a、70b，分別配置在鏡筒104內之上端部近旁及下端部近旁，於上下方向兩者分離。於此一對電磁透鏡70a、70b彼此間配置有靜電多極70c。靜電多極70c，係配置在被物鏡縮小之電子束EB之射束路上之束腰部分。因此，通過靜電多極70c之複數條射束EB，會有因作用於彼此間之庫倫力而互斥，使得倍率變化之情形。又，亦可將電磁透鏡70a、70b配置在鏡筒104之外。 As shown in FIGS. 2 (A) and 2 (B), the electron beam optical system 70 includes a lens barrel 104, an objective lens composed of a pair of electromagnetic lenses 70a and 70b held by the lens barrel 104, and an electrostatic multipole 70c. . The objective lens and electrostatic multipole 70c of the electron beam optical system 70 are arranged on a beam path that irradiates a plurality of light beams LB to the photoelectric element 54 and emits (emits) electrons (electron beams EB) from the photoelectric layer 60 by photoelectric conversion. . The pair of electromagnetic lenses 70 a and 70 b are respectively disposed near the upper end portion and the lower end portion in the lens barrel 104, and are separated from each other in the vertical direction. An electrostatic multipole 70c is disposed between the pair of electromagnetic lenses 70a and 70b. The electrostatic multipole 70c is a waist portion arranged on the beam path of the electron beam EB which is reduced by the objective lens. Therefore, the multiple beams EB passing through the electrostatic multipole 70c may be mutually exclusive due to the Coulomb force acting on each other and the magnification may be changed. The electromagnetic lenses 70 a and 70 b may be disposed outside the lens barrel 104.

因此，於本實施形態，具有XY倍率修正用之第1靜電透鏡70c1、與電子束之照射位置控制(及照射位置偏移修正)、亦即光學圖案之投影位置調整(及投影位置偏移修正)用之第2靜電透鏡70c2的靜電多極70c，係配置在電子束光學系統70之內部。第1靜電透鏡70c1，例如圖5之示意圖所示，以高速且個別的修正於X軸方向及Y軸方向之縮小倍率。又，亦可由第1靜電透鏡70c1與第2靜電透鏡70c2之各個，進行XY倍率修正與電子束之照射位置控制(及照射位置偏移修正)。此外，亦可作成能由第1靜電透鏡70c1進行與X軸方向及Y軸方向不同之軸方向之倍率調整。再者，亦可不設置第1靜電透鏡70c1與第2靜電透鏡70c2中之任一方，靜電多極70c可具有追加之靜電透鏡。 Therefore, in this embodiment, the first electrostatic lens 70c 1 for XY magnification correction and the irradiation position control (and irradiation position offset correction) with the electron beam, that is, the projection position adjustment of the optical pattern (and the projection position deviation) correction) with the second electrostatic lens 2 multipole electrostatic 70c 70c, lines disposed inside of the electron beam optical system 70. The first electrostatic lens 70c 1 , as shown in the schematic diagram of FIG. 5, corrects the reduction magnifications in the X-axis direction and the Y-axis direction individually and at high speed. Further, each of the first or by the electrostatic lens 70c 1 and 70c 2 of the second electrostatic lens, the XY magnification correction for controlling the irradiation position of the electron beam (and the irradiation position shift correction). Further, the magnification adjustment can also be made different from the X-axis direction and the Y-axis direction of the axis of the first electrostatic lens 70c 1. In addition, either of the first electrostatic lens 70c 1 and the second electrostatic lens 70c 2 may not be provided, and the electrostatic multipole 70c may have an additional electrostatic lens.

又，第2靜電透鏡70c2，將因各種振動等引起之射束之照射位置偏移(後述之切割圖案之投影位置偏移)一起加以修正。第2靜電透鏡70c2，亦用於曝光時進行射束對晶圓W之循跡控制時之射束之偏向控制、亦即亦被用於射束之照射位置控制。又，在使用電子束光學系統70以外之部分、例如使用前述投影光學系統186等來進行縮小倍率之修正之情形時等，亦可取代靜電多極 70c，而使用由可進行電子束之偏向控制之靜電透鏡構成的靜電偏向透鏡。 In addition, the second electrostatic lens 70c 2 corrects a shift in the irradiation position of the beam due to various vibrations and the like (a shift in the projection position of a cutting pattern described later). The second electrostatic lens 70c 2 is also used to control the deflection of the beam when the beam is tracked to the wafer W during exposure, that is, to control the irradiation position of the beam. In addition, when using a part other than the electron beam optical system 70, for example, when the reduction magnification is corrected using the projection optical system 186, etc., instead of the electrostatic multipole 70c, the electron beam deflection control can be used. The electrostatic deflection lens constituted by an electrostatic lens.

電子束光學系統70之縮小倍率，在不進行倍率修正之狀態下，設計上為例如1/50，當然亦可以是1/30、1/20等其他倍率。 The reduction magnification of the electron beam optical system 70 is designed to be, for example, 1/50 without magnification correction, and of course, other magnifications such as 1/30, 1/20, etc. may be used.

於鏡筒104之射出端，如圖2(A)及圖2(B)所示，形成有電子束之出口104a，於此出口104a部分之下方配置有反射電子檢測裝置106。反射電子檢測裝置106，係配置在於冷卻板74和前述出口104a對向形成之圓形(或矩形)之開口74a內部。具體而言，就電子束光學系統70之光軸AXe(與投影光學系統186之光軸AXo(參照圖4)一致)在X軸方向兩側設有一對反射電子檢測裝置106x1、106x2。又，就光軸AXe在Y軸方向之兩側設有一對反射電子檢測裝置106y1、106y2。上述2對反射電子檢測裝置106之各個，係由例如半導體檢測器構成，檢測從晶圓上之對準標記、或基準標記等之檢測對象標記產生之反射成分，此處係檢測反射電子，將與檢測到之反射電子對應之檢測訊號送至訊號處理裝置108(參照圖8)。訊號處理裝置108，將複數個反射電子檢測裝置106之檢測訊號以未圖示之擴大機加以增幅後進行訊號處理，將該處理結果送至主控制裝置110(參照圖8)。又，反射電子檢測裝置106，可僅設於45個電子束光學系統70之一部分(至少1個)、亦可不設置。又，曝光裝置1000亦可不具備反射電子檢測裝置106。 As shown in FIG. 2 (A) and FIG. 2 (B), at the exit end of the lens barrel 104, an electron beam exit 104a is formed, and a reflective electron detection device 106 is arranged below the exit 104a portion. The reflection electron detection device 106 is disposed inside the circular (or rectangular) opening 74a formed by the cooling plate 74 and the outlet 104a facing each other. Specifically, the electron beam on the optical axis of the optical system of AXe 70 (the projection optical system optical axis AXO (see FIG. 4) of the same 186) on both sides in the X-axis direction is provided with a reflection electron detector means 106x 1, 106x 2. Further, a pair of reflection electron detection devices 106y 1 and 106y 2 are provided on both sides of the optical axis AXe in the Y-axis direction. Each of the above-mentioned two pairs of reflected electron detection devices 106 is composed of, for example, a semiconductor detector, and detects a reflection component generated from a detection target mark such as an alignment mark or a reference mark on a wafer. Here, the reflected electrons are detected. A detection signal corresponding to the detected reflected electrons is sent to a signal processing device 108 (see FIG. 8). The signal processing device 108 performs signal processing after amplifying the detection signals of the plurality of reflected electronic detection devices 106 by an amplifier (not shown), and sends the processing result to the main control device 110 (see FIG. 8). In addition, the reflection electron detection device 106 may be provided only in a part (at least one) of the 45 electron beam optical systems 70 or may not be provided. The exposure device 1000 may not include the reflection electron detection device 106.

反射電子檢測裝置106x1、106x2、106y1、106y2可固定於鏡筒104、亦可安裝於冷卻板74。 The reflection electronic detection devices 106 x1 , 106 x2 , 106 y1 , and 106 y2 can be fixed to the lens barrel 104 or can be mounted to the cooling plate 74.

於冷卻板74，與45個電子束光學系統70之鏡筒104之出口104a個別對向形成有45個開口74a，於該開口74a內配置有2對反射電子檢測裝置106。又，亦可不設置冷卻板。 On the cooling plate 74, 45 openings 74a are formed opposite to the outlets 104a of the lens barrels 104 of the 45 electron beam optical systems 70, and two pairs of reflection electron detection devices 106 are arranged in the openings 74a. It is not necessary to provide a cooling plate.

如圖2(A)及圖2(B)所示，於底板38，在光軸AXe上形成有前述縮孔部38b。縮孔部38b，形成在於底板38上面以既定深度形成之俯視圓形 (或矩形)之凹部38a的內部底面，由在X軸方向長之矩形孔構成。又，於光軸AXe上，設置在光電層60上側之多數個孔徑58a之配置區域之中心(此處，與真空間隔壁132(貫通孔36a)之中心軸一致)是大致一致的。縮孔部38b，以和45個電子束光學系統70之光軸AXe個別對向形成於底板38。 As shown in FIG. 2 (A) and FIG. 2 (B), the aforementioned shrinkage hole portion 38b is formed on the bottom plate 38 on the optical axis AXe. The shrinkage hole portion 38b is formed on the bottom surface of the bottom surface of the inner surface of the circular (or rectangular) concave portion 38a formed in a predetermined depth on the bottom plate 38, and is formed of a rectangular hole long in the X-axis direction. In addition, on the optical axis AXe, the centers of the arrangement regions of the plurality of apertures 58a provided on the upper side of the photovoltaic layer 60 (here, the center axis of the vacuum partition wall 132 (through-hole 36a) coincides) are substantially the same. Shrinkage portions 38b are formed in the bottom plate 38 so as to face the optical axes AXe of the 45 electron beam optical systems 70 individually.

曝光裝置1000中，於前述鏡筒78、箱體19之第1部分19a、第2部分19b及載台室10，設有維修保養用之開關部。 In the exposure apparatus 1000, a switch section for maintenance is provided in the lens barrel 78, the first portion 19a, the second portion 19b, and the stage chamber 10 of the case 19.

由以上之說明清楚可知，本實施形態之曝光裝置1000，如圖7所示，於曝光時，在圖案產生器184之受光面上光束照射於X軸方向之長度為Smm、Y軸方向之長度為Tmm(S>T)之矩形區域內部，藉由此照射，來自圖案產生器184之光即藉由具有縮小倍率1/4之投影光學系統186照射於光電元件54，進一步的，藉由此照射而生成之電子束透過具有縮小倍率1/50之電子束光學系統70，照射於像面(對齊於像面之晶圓面)上之X軸方向長度s=(S/200)mm、Y軸方向長度t=(T/200)mm之矩形區域(曝光場)。亦即，於本實施形態置之曝光裝置1000，包含光照射裝置180(投影光學系統186)、與此對應之光電元件54、及與此對應之電子束光學系統70，構成縮小倍率1/200之直筒型多光束光學系統200(參照圖8)，在XY平面內以前述矩陣狀配置具有45個此多光束光學系統200。因此，本實施形態曝光裝置1000之光學系統係具有45個縮小倍率1/200之縮小光學系統的多列(multi-column)電子束光學系統。 As is clear from the above description, as shown in FIG. 7, during the exposure, the length of the light beam irradiated on the light receiving surface of the pattern generator 184 in the X-axis direction is the length in the Smm and Y-axis directions. Inside the rectangular area of Tmm (S> T), by this irradiation, the light from the pattern generator 184 is irradiated on the photoelectric element 54 by the projection optical system 186 having a reduction ratio of 1/4, and further, by this The electron beam generated by irradiation passes through the electron beam optical system 70 having a reduction ratio of 1/50, and is irradiated on the image plane (wafer surface aligned with the image plane) in the X-axis direction length s = (S / 200) mm, Y Rectangular area (exposure field) with axial length t = (T / 200) mm. That is, the exposure device 1000 provided in this embodiment includes a light irradiation device 180 (projection optical system 186), a corresponding photoelectric element 54, and a corresponding electron beam optical system 70, and constitutes a reduction ratio of 1/200. The straight multi-beam optical system 200 (see FIG. 8) has 45 such multi-beam optical systems 200 arranged in a matrix in the aforementioned XY plane. Therefore, this embodiment The optical system of the exposure apparatus 1000 is a multi-column electron beam optical system having 45 reduction optical systems with a reduction magnification of 1/200.

又，於曝光裝置100，係以直徑300厘米之晶圓為曝光對象，與晶圓對向配置45個電子束光學系統70，因此電子束光學系統70之光軸Axe之配置間隔，舉一例而言，係設為43mm。如此一來，1個電子束光學系統70所負責之曝光區域，最大為43mm×43mm之矩形區域，因此如前所述，晶圓載台WST之X軸方向及Y軸方向之移動行程只要有50mm即足夠。又，電子束光學系統70之數量不限於45個，可依據晶圓直徑、晶圓載台WST之行程等來決定。 In the exposure device 100, a wafer having a diameter of 300 cm is used as an exposure target, and 45 electron beam optical systems 70 are arranged opposite to the wafer. Therefore, the arrangement interval of the optical axis Axe of the electron beam optical system 70 is taken as an example. In other words, it is set to 43mm. In this way, the exposure area that an electron beam optical system 70 is responsible for is a maximum rectangular area of 43mm × 43mm. Therefore, as mentioned above, the travel distance of the X-axis and Y-axis directions of the wafer stage WST is only 50mm. That is enough. In addition, the number of the electron beam optical systems 70 is not limited to 45, and can be determined according to the wafer diameter, the stroke of the wafer stage WST, and the like.

圖8係顯示以曝光裝置1000之控制系統為主構成之主控制裝置110之輸出入關係的方塊圖。主控制裝置110包含微電腦等，統籌控制包含圖8所示各部分之曝光裝置1000之各構成部分。圖8中，連接於控制部11之光照射裝置180，包含根據來自主控制裝置110之指示以控制部11控制之雷射二極體88、AO偏向器90、及光學特性調整裝置87等。又，連接於控制部11之電子束光學系統70，包含根據來自主控制裝置110之指示，以控制部11控制之一對電磁透鏡70a、70b及靜電多極70c(第1靜電透鏡70c1及第2靜電透鏡70c2)。此外，圖8中，符號500係表示包含前述多光束光學系統200、控制部11、訊號處理裝置108、以及2對反射電子檢測裝置106所構成之曝光單元。於曝光裝置1000，設有45個曝光單元500。 FIG. 8 is a block diagram showing the input-output relationship of the main control device 110 mainly composed of the control system of the exposure device 1000. The main control device 110 includes a microcomputer and the like, and collectively controls each component of the exposure device 1000 including each portion shown in FIG. 8. In FIG. 8, the light irradiation device 180 connected to the control section 11 includes a laser diode 88 controlled by the control section 11 according to an instruction from the main control device 110, an AO deflector 90, and an optical characteristic adjustment device 87. The electron beam optical system 70 connected to the control unit 11 includes one pair of electromagnetic lenses 70a, 70b and electrostatic multipole 70c (the first electrostatic lens 70c 1 and The second electrostatic lens 70c 2 ). In addition, in FIG. 8, reference numeral 500 denotes an exposure unit including the aforementioned multi-beam optical system 200, the control unit 11, the signal processing device 108, and two pairs of reflected electron detection devices 106. The exposure apparatus 1000 is provided with 45 exposure units 500.

又，於曝光裝置1000，因下述理由，採用非正方形、而是矩形(長方形)之曝光場。 Further, in the exposure apparatus 1000, a non-square but rectangular (rectangular) exposure field is used for the following reasons.

圖9中，在表示電子束光學系統之直徑D之有效區域(像差有效區域)的圓內，顯示了正方形之曝光場(正方形場)SF與矩形之曝光場(矩形場)RF。由此圖9清楚可知，欲最大限度使用電子束光學系統之有效區域，則正方形場SF較佳。不過，正方形場SF之場合，如圖9所示，作為場寬會有30%(1/2)程度之損失。例如，若係具有60：11之長寬比的矩形場RF的話，有效區域大致為場寬。此點，在多列時會是非常大的優點。除此之外，亦有能提升檢測對準標記時之標記檢測感度的優點。不論場之形狀為何，因照射於場內之電子之總量相同，故矩形場與正方形場相較電流密度大，因此，將標記配置在晶圓上之較小面積亦能以充分的檢測感度進行檢測。又，矩形場在像差管理上較正方形場容易。 In FIG. 9, a square exposure field (square field) SF and a rectangular exposure field (rectangular field) RF are shown in a circle representing an effective area (aberration effective area) of the diameter D of the electron beam optical system. It is clear from FIG. 9 that, to maximize the effective area of the electron beam optical system, a square field SF is preferred. However, in the case of a square field SF, as shown in Fig. 9, the field width will be 30% (1 / 2) Loss of degree. For example, if the rectangular field RF has an aspect ratio of 60:11, the effective area is approximately the field width. This is a great advantage when there are multiple columns. In addition, it has the advantage of improving the mark detection sensitivity when detecting alignment marks. Regardless of the shape of the field, since the total amount of electrons irradiated into the field is the same, the rectangular and square fields have a higher current density than the square field. Therefore, the smaller area where the mark is arranged on the wafer can also be detected with sufficient sensitivity. Check it out. Also, the rectangular field is easier to manage aberrations than the square field.

圖9中，無論正方形場SF及矩形場RF任一者之曝光場皆是設定為包含電子束光學系統之光軸AXe。然而，不限於此，亦可將曝光場以不包含光軸 AXe之方式，設定在像差有效區域內。又，亦可將曝光場設定為矩形(含正方形)以外之形狀、例如圓弧狀、或六角形、平行四邊形、梯形等之多角形狀。 In FIG. 9, the exposure field of either the square field SF or the rectangular field RF is set to include the optical axis AXe of the electron beam optical system. However, the present invention is not limited to this, and the exposure field may be set within the aberration effective region so as not to include the optical axis AXe. Moreover, the exposure field may be set to a shape other than a rectangle (including a square), for example, an arc shape, or a polygonal shape such as a hexagon, a parallelogram, or a trapezoid.

接著，針對以本實施形態之曝光裝置1000，在晶圓W之曝光中進行之劑量(doze)控制進行說明。 Next, the doze control performed in the exposure of the wafer W by the exposure apparatus 1000 of this embodiment will be described.

曝光場內之照度不均，係由主控制裝置110在後述曝光時，藉由對照射於微透鏡陣列187之複數個微透鏡188i，j之複數條光束進行前述on/off控制，進行以各微透鏡188i，j聚光之光之強度調整，具以進行與各個微透鏡188i，j對應之每一光束每之強度(照度)控制，就結果而言，進行在光電層60之電子放射面上之面內之照度分布、及在與此對應之晶圓面上之曝光場RF內之照度分布之調整。亦即，正確的調整照射於曝光場RF之複數條電子束各個之強度。 The uneven illumination in the exposure field is controlled by the main control device 110 during the later-described exposure by performing the aforementioned on / off control on the plurality of light beams 188 i, j of the plurality of microlenses 188 i, j irradiating the microlens array 187 to each microlens 188 i, j converging the intensity of light adjusted for having the respective microlenses 188 i, j corresponding to each beam of each of the intensity (illuminance) controls, on the results, the photovoltaic layer 60 in the Adjustment of the illuminance distribution in the plane on the electron emission surface and the illuminance distribution in the exposure field RF on the corresponding wafer surface. That is, the intensity of each of the plurality of electron beams irradiated to the exposure field RF is accurately adjusted.

又，作為在光電層60之電子放射面上之面內照度分布之調整的前提，係以藉由光電轉換而從光電層60之電子放射面生成之複數條電子束之強度(電子束之照度、射束電流量)大致相同之方式，進行照射於光電層60之複數條光束之強度調整。此光束強度之調整，可在照明系統182內進行、亦可以圖案產生器184進行、或在投影光學系統186內進行。不過，亦可使藉由光電轉換而從光電層60之電子放射面生成之複數條電子束中至少一部分之射束強度(電子束之照度、射束電流量)，與其他射束之強度不同之方式，進行照射於光電層60之複數條光束之強度調整。 In addition, as a premise of adjusting the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60, the intensity of a plurality of electron beams (irradiance of the electron beam) generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion is used. , Beam current amount), the intensity of a plurality of light beams irradiated to the photoelectric layer 60 is adjusted in substantially the same manner. The adjustment of the beam intensity may be performed in the illumination system 182, the pattern generator 184, or the projection optical system 186. However, the intensity of at least a part of the plurality of electron beams generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion (irradiance of the electron beam and the amount of beam current) may be made different from the intensity of other beams In this way, the intensity adjustment of a plurality of light beams irradiated to the photoelectric layer 60 is performed.

又，形成在晶圓之抗蝕劑層，不單會受到在光電層60之電子放射面上之面內照度分布之影響，亦會受其他原因、例如電子之前方散射、後方散射、或起霧(fogging)模糊等之影響。 In addition, the resist layer formed on the wafer is not only affected by the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60, but also by other reasons, such as front scattering of electrons, back scattering, or fogging. (fogging) the effect of blurring and so on.

此處，前方散射係指在射入晶圓表面之抗蝕劑層內之電子到達晶圓表面為止之期間於抗蝕劑層內散射的現象，後方散射係指透過抗蝕劑層到達晶圓表面之電子在晶圓表面或其內部散射而再度射入抗蝕劑層內、散射至周圍 的現象。又，起霧係指來自抗蝕劑層表面之反射電子，在例如冷卻板74之底面再反射，而對周圍增加劑量的現象。 Here, forward scattering refers to a phenomenon in which electrons in the resist layer incident on the wafer surface reach the wafer surface while being scattered in the resist layer, and backward scattering refers to reaching the wafer through the resist layer. The phenomenon that surface electrons are scattered on the wafer surface or inside, and are again injected into the resist layer and scattered to the surroundings. The fogging is a phenomenon in which the reflected electrons from the surface of the resist layer are reflected again on the bottom surface of the cooling plate 74 to increase the dose to the surroundings.

由上述說明清楚可知，受前方散射影響之範圍，較後方散射及起霧窄，因此於曝光裝置1000，對前方散射、後方散射及起霧係採用不同之修正方法。 It is clear from the above description that the range affected by forward scattering is narrower than that of rear scattering and fogging. Therefore, in the exposure device 1000, different correction methods are used for forward scattering, rear scattering, and fogging.

於用以減輕前方散射成分之影響的PEC(近接效應修正，Proximity Effect Correction)，主控制裝置110係預期前方散射成分之影響，透過控制部11進行使用發光元件184之面內照度分布之調整。 In PEC (Proximity Effect Correction) to reduce the influence of the forward scattering component, the main control device 110 anticipates the influence of the forward scattering component and adjusts the in-plane illumination distribution using the light-emitting element 184 through the control unit 11.

另一方面，於用以減輕後方散射成分之影響的PEC、及用以減輕起霧之影響的FEC(起霧效應修正，Fogging Effect Correction)，主控制裝置110透過控制部11，使用圖案產生器184以某種程度之空間頻率進行面內照度分布之調整。 On the other hand, in the PEC to reduce the influence of the back scattering component and the FEC (Fogging Effect Correction) to reduce the influence of fogging, the main control device 110 uses the pattern generator through the control unit 11 184 adjusts the in-plane illumination distribution with a certain degree of spatial frequency.

又，本實施形態之曝光裝置1000，例如係用於互補性微影。此場合，以例如在使用ArF光源之液浸曝光中藉由利用雙層布局等而形成有L/S圖案之晶圓為曝光對象，用於為進行該線圖案之切斷之切割圖案之形成。於曝光裝置1000，可形成與形成在光電元件54之遮光膜58之72000個孔徑58a之各個對應的切割圖案。 The exposure apparatus 1000 of this embodiment is used for complementary lithography, for example. In this case, for example, in a liquid immersion exposure using an ArF light source, a wafer having an L / S pattern formed by using a double-layer layout or the like is used as an exposure object for forming a cutting pattern for cutting the line pattern. . In the exposure device 1000, a cutting pattern corresponding to each of the 72,000 apertures 58a of the light-shielding film 58 formed on the photovoltaic element 54 can be formed.

本實施形態中，對晶圓之處理流程如下。 In this embodiment, the processing flow for the wafer is as follows.

首先，將塗布有電子線抗蝕劑之曝光前晶圓W，在載台室10內，載置於晶圓載台WST上並以靜電夾頭加以吸附。 First, the pre-exposure wafer W coated with the electron beam resist is placed on the wafer stage WST in the stage chamber 10 and is adsorbed by an electrostatic chuck.

對應晶圓載台WST上之晶圓W上形成之例如45個照射(shot)區域之各個，對形成在刻劃線(street line)之至少各1個對準標記從各電子束光學系統70照射電子束，以反射電子檢測裝置106x1、106x2、106y1、106y2之至少1個檢測來自至少各1個對準標記之反射電子，進行晶圓W之全點對準測量，根據此 全點對準測量之結果，對晶圓W上之45個照射區域，開始使用45個曝光單元500(多光束光學系統200)之曝光。例如若係互補性微影之情形，在對晶圓W上形成之以X軸方向為週期方向之L/S圖案之切割圖案，使用從各多光束光學系統200射出之多數射束(電子束)形成時，一邊於Y軸方向掃描晶圓W(晶圓載台WST)、一邊控制各射束之照射時序(on/off)。又，亦可不進行全點對準測量，而進行對應晶圓W之部分照射區域形成之對準標記之檢測，根據其結果來實施45個照射區域之曝光。此外，本實施形態中，曝光單元500之數量與照射區域之數量雖相同，但亦可不同。例如，曝光單元500之數量可較照射區域之數量少。又，亦可在載台室10之外進行對準標記之檢測。此場合，可不進行在載台室10內之對準標記之檢測。 Corresponding to each of, for example, 45 shot areas formed on the wafer W on the wafer stage WST, at least one alignment mark formed on a street line is irradiated from each electron beam optical system 70 Electron beam, using reflected electron detection devices 106 x1 , 106 x2 , 106 y1 , 106 y2 to detect at least one reflected electron from at least one alignment mark, and perform an all-point alignment measurement of the wafer W. As a result of the point alignment measurement, the 45 exposure areas on the wafer W were exposed using 45 exposure units 500 (multi-beam optical system 200). For example, in the case of complementary lithography, the cutting pattern of the L / S pattern with the X-axis direction as the periodic direction formed on the wafer W uses a plurality of beams (electron beams) emitted from each of the multi-beam optical systems 200 During the formation, the wafer W (wafer stage WST) is scanned in the Y-axis direction, and the irradiation timing (on / off) of each beam is controlled. In addition, instead of performing full-point alignment measurement, detection of alignment marks formed in a part of the irradiated area of the wafer W may be performed, and exposure of 45 irradiated areas may be performed based on the results. In addition, in this embodiment, although the number of exposure units 500 and the number of irradiation areas are the same, they may be different. For example, the number of exposure units 500 may be smaller than the number of irradiation areas. It is also possible to detect the alignment mark outside the stage chamber 10. In this case, the detection of the alignment mark in the stage chamber 10 may not be performed.

又，由於曝光裝置1000係用於互補性微影，用於對晶圓W上形成之例如以X軸方向為週期方向之L/S圖案之切割圖案的形成，因此可使圖案產生器、亦即DMD184所具有之K個(α×β×m×n個)反射鏡185p,q中、與微透鏡陣列187之m×n個微透鏡188i，j對應之反射鏡185p,q之m×n群中之任意群之反射鏡185p,q為on狀態，來形成切割圖案。於此場合，與微透鏡之數量對應之m×n條(例如12×6000=72000條)光束可同時照射於晶圓W上、亦可不照射於晶圓上。 In addition, since the exposure device 1000 is used for complementary lithography, it is used to form a cutting pattern of the L / S pattern formed on the wafer W with the X-axis direction as a periodic direction, for example. i.e. DMD184 possessed of the K (α × β × m × n number) mirrors 185 p, q, the microlens array m 187 of × n microlenses 188 i, j corresponding to the mirror 185 p, q of Any of the mirrors 185 p, q of the m × n group are in the on state to form a cutting pattern. In this case, m × n beams (for example, 12 × 6000 = 72000 beams) corresponding to the number of microlenses may be irradiated on the wafer W at the same time or not on the wafer.

本實施形態之曝光裝置1000，係在依據既定曝光順序對晶圓W之掃描曝光中，以主控制裝置110根據位置測量系統28之測量值，控制載台驅動系統26並透過各曝光單元500之控制部11控制光束照射裝置80及電子束光學系統70。此時，根據主控制裝置110之指示，視需要由控制部11進行前述之劑量控制。 The exposure device 1000 of this embodiment is based on the scanning exposure of the wafer W according to a predetermined exposure sequence, and the main control device 110 controls the stage driving system 26 according to the measurement value of the position measurement system 28 and passes through each of the exposure units 500. The control unit 11 controls the beam irradiation device 80 and the electron beam optical system 70. At this time, according to the instruction of the main control device 110, the aforementioned dose control is performed by the control unit 11 as necessary.

以上說明之劑量控制，由於係藉由控制圖案產生器(DMD)184來進行之劑量控制，因可以說是動態的劑量控制。 The dose control described above is a dynamic dose control because the dose control is performed by the control pattern generator (DMD) 184.

然而，於曝光裝置1000，不限於此，亦可採用以下之劑量控制。 However, the exposure device 1000 is not limited to this, and the following dose control can also be adopted.

例如會有因光學系統引起之模糊(blur)及/或因抗蝕劑模糊， 而如圖10(A)所示，在晶圓上原本應是正方形(或矩形)之切割圖案(抗蝕劑圖案)CP，例如成為4角(corner)成圓弧之切割圖案CP’的情形。於本實施形態，亦可如圖10(B)所示，透過在形成在遮光膜58之孔徑58a之4角設有輔助圖案58c的非矩形孔徑58a’將光束照射於光電層60，將藉由光電轉換產生之電子束透過電子束光學系統70照射於晶圓上，據以將與非矩形孔徑58a’之形狀相異形狀之電子束之照射區域形成在晶圓上。此場合，電子束之照射區域之形狀與待形成於晶圓之切割圖案CP之形狀，可相同、亦可不同。例如，在可幾乎忽視抗蝕劑模糊之影響之情形時，以電子束之照射區域之形狀與所欲之切割圖案CP之形狀(例如矩形或正方形)大致相同之方式，決定孔徑58a’之形狀即可。此場合之孔徑58a’之使用可不視為是劑量控制。 For example, there may be a blur caused by an optical system and / or a resist blur, and as shown in FIG. 10 (A), a square (or rectangular) cutting pattern (resist) should be originally on the wafer. The pattern) CP is, for example, a case where the corners have a circular cutting pattern CP ′. In this embodiment, as shown in FIG. 10 (B), the light beam may be irradiated to the photoelectric layer 60 through a non-rectangular aperture 58a ′ provided with auxiliary patterns 58c at the four corners of the aperture 58a of the light-shielding film 58. The electron beam generated by the photoelectric conversion is irradiated on the wafer through the electron beam optical system 70, and an irradiation region of the electron beam having a shape different from the shape of the non-rectangular aperture 58a 'is formed on the wafer. In this case, the shape of the irradiation area of the electron beam and the shape of the cutting pattern CP to be formed on the wafer may be the same or different. For example, when the influence of the resist blur can be almost ignored, the shape of the aperture 58a 'is determined in such a manner that the shape of the irradiation area of the electron beam is substantially the same as the shape of the desired cutting pattern CP (for example, rectangular or square). Just fine. The use of the aperture 58a 'in this case is not considered to be dose control.

此處，於孔徑58a’，無需於矩形孔徑58a之全部4角設置輔助圖案58c，可僅於孔徑58a之4角中之至少一部分設置輔助圖案58c。又，亦可僅在形成於遮光膜58之複數個孔徑58a’之一部分於矩形孔徑58a之全部4角設置輔助圖案58c。又，亦可以形成在遮光膜58之複數個孔徑之一部分為孔徑58a’，而其餘則為孔徑58a。亦即，無需使形成在遮光膜58之複數個孔徑58a’之全部形狀相同。此外，孔徑之形狀、大小等雖然可根據模擬結果加以設計，但最好是能根據實際曝光結果，例如根據電子束光學系統70之特性來使之最佳化。無論如何，係以抑制在晶圓(標的物)上之照射區域之角部變成圓弧之方式，決定孔徑各個之形狀。又，前方散射成分之影響亦能以孔徑形狀加以減輕。 Here, the auxiliary pattern 58c need not be provided on all the four corners of the rectangular aperture 58a, and the auxiliary pattern 58c may be provided only on at least a part of the four corners of the aperture 58a. Further, the auxiliary pattern 58c may be provided only on a part of the plurality of apertures 58a 'formed in the light-shielding film 58 at all four corners of the rectangular aperture 58a. In addition, a part of the plurality of apertures formed in the light-shielding film 58 may be an aperture 58a ', and the rest may be an aperture 58a. That is, it is not necessary to make all the shapes of the plurality of apertures 58a 'formed in the light-shielding film 58 the same. In addition, although the shape, size, etc. of the aperture can be designed based on simulation results, it is desirable to optimize them based on actual exposure results, such as the characteristics of the electron beam optical system 70. In any case, the shape of each aperture is determined in such a manner that the corners of the irradiated area on the wafer (target object) are prevented from becoming arcs. In addition, the influence of the forward scattering component can also be reduced by the shape of the aperture.

又，例如，在可幾乎忽視光學系統起因之模糊的情形時，孔徑58a’之形狀與電子束之照射區域之形狀可相同。此外，亦可以電子束照射區域之形狀成為所欲之切割圖案CP之形狀(例如，矩形或正方形)之方式，調整照射於各個孔徑58a、58a’之光束之剖面強度分布。 In addition, for example, when the blur caused by the optical system can be almost ignored, the shape of the aperture 58a 'and the shape of the irradiation area of the electron beam may be the same. In addition, the cross-sectional intensity distribution of the light beam irradiated to each of the apertures 58a, 58a 'may be adjusted in such a manner that the shape of the electron beam irradiation area becomes the shape (for example, rectangular or square) of the desired cutting pattern CP.

於曝光裝置1000，雖具有複數個、例如具有45個電子束光學系統 70，但由於該45個電子束光學系統70係為滿足相同規格而經相同製程製造，因此例如圖11(A)之示意圖所示，會有曝光場歪斜之固有畸變(distortion)於45個電子束光學系統70共通產生之情形。此種複數個電子束光學系統70共通之變形，如圖11(B)之示意圖所示，可藉由將位於光電層60上之遮光膜58上之孔徑58a之配置，以抵消或降低上述畸變之方式配置，來加以修正。此外，圖11(A)之圓係顯示電子束光學系統70之像差有效區域。 Although the exposure device 1000 has a plurality of, for example, 45 electron beam optical systems 70, the 45 electron beam optical systems 70 are manufactured by the same process to meet the same specifications, so for example, the schematic diagram of FIG. 11 (A) As shown, there may be a case where the inherent distortion of the exposure field distortion is common to the 45 electron beam optical systems 70. Such a common deformation of the plurality of electron beam optical systems 70, as shown in the schematic diagram of FIG. 11 (B), can dispose or reduce the above-mentioned distortion by arranging the aperture 58a on the light shielding film 58 on the photoelectric layer 60. Configuration to modify it. In addition, the circle system in FIG. 11 (A) shows the aberration effective area of the electron beam optical system 70.

圖11(B)中，為易於理解，各孔徑58a係顯示成平行四邊形等而非矩形，實際上，遮光膜58上之孔徑58a係以矩形或正方形形成。此例，係顯示將電子束光學系統70固有之桶形畸變(barrel distortion)，藉由將複數個孔徑58a沿著枕形畸變(pincushion distortion)形狀配置在光電層60上，來加以抵消或降低之情形。又，電子束光學系統70之畸變不限於桶形畸變，在例如電子束光學系統70之畸變係枕形畸變之情形，可以抵消或降低其影響之方式，將複數個孔徑58a配置成桶形畸變形狀。此外，亦可配合各孔徑58a之配置調整來自投影光學系統186之複數條光束之位置，亦可不進行調整。 In FIG. 11 (B), for ease of understanding, the apertures 58a are shown as parallelograms instead of rectangles. In fact, the apertures 58a on the light shielding film 58 are formed as rectangles or squares. This example shows that the barrel distortion inherent in the electron beam optical system 70 is offset or reduced by arranging a plurality of apertures 58a along the pincushion distortion shape on the photoelectric layer 60. Situation. In addition, the distortion of the electron beam optical system 70 is not limited to barrel distortion. In the case of the pincushion distortion of the electron beam optical system 70, for example, the influence can be counteracted or reduced, and the plurality of apertures 58a are configured as barrel distortion. shape. In addition, the positions of the plurality of light beams from the projection optical system 186 can also be adjusted in accordance with the configuration of each of the apertures 58a, and no adjustment is required.

如以上之說明，本實施形態之曝光裝置1000，具備45個包含多光束光學系統200、控制部11以及訊號處理裝置108構成之曝光單元500(參照圖8)。多光束光學系統200包含光束照射裝置180與電子束光學系統70。光照射裝置180，包含可提供能個別控制之複數條光束的圖案產生器184、對圖案產生器184照射照明光的照明系統182、以及將來自圖案產生器184之複數條光束透過微透鏡陣列187照射光電元件54的投影光學系統186，電子束光學系統70藉由將複數條光束照射於光電元件54據以將從光電元件54放射出之電子作為複數條電子束照射於晶圓W。因此，由於曝光裝置1000不具有遮蔽孔徑，因此根本上不存在因充電或磁化導致之複雜畸變的產生源，且無助於標的物曝光之多餘電子(反射電子)變少，從而能排除長期性的不安定原因。 As described above, the exposure apparatus 1000 according to this embodiment includes 45 exposure units 500 (see FIG. 8) including a multi-beam optical system 200, a control unit 11, and a signal processing device 108. The multi-beam optical system 200 includes a beam irradiation device 180 and an electron beam optical system 70. The light irradiation device 180 includes a pattern generator 184 capable of providing a plurality of light beams that can be individually controlled, an illumination system 182 that irradiates the pattern generator 184 with illumination light, and transmits the plurality of light beams from the pattern generator 184 through the microlens array 187 The projection optical system 186 which irradiates the photoelectric element 54 and the electron beam optical system 70 irradiate the plurality of light beams to the photoelectric element 54 so that the electrons emitted from the photoelectric element 54 are irradiated to the wafer W as a plurality of electron beams. Therefore, since the exposure device 1000 does not have a shielding aperture, there is basically no source of complex distortion due to charging or magnetization, and there are fewer excess electrons (reflected electrons) that do not help the exposure of the target, thereby eliminating long-term Cause of instability.

又，根據本實施形態之曝光裝置1000，於實際之晶圓曝光時，主控制裝置110係透過載台驅動系統26控制保持晶圓W之晶圓載台WST於Y軸方向之掃描(移動)。與此並行的，主控制裝置110針對曝光單元500之m個(例如45個)多光束光學系統200之各個，使分別通過光電元件54之m×n個(例如72000個)微透鏡及對應之孔徑58a的m×n條光束之照射狀態(on狀態與off狀態)就每一孔徑58a分別變，並使用圖案產生器184就每一光束進行光束之強度調整。據此，即能將因通過各孔徑58a之光束(on狀態之光束)照射光電層60而產生之電子束之強度，就每一電子束進行調整，進而能抑制在標的物之晶圓面上之電子束之每一射束之強度不均。亦能抑制在晶圓面上之電子束照射區域內之強度不均之產生。 Furthermore, according to the exposure apparatus 1000 of this embodiment, during actual wafer exposure, the main control device 110 controls the scanning (moving) of the wafer stage WST holding the wafer W in the Y-axis direction through the stage driving system 26. In parallel with this, the main control device 110 passes m × n (for example, 72,000) microlenses of the photoelectric element 54 to each of the m (for example, 45) multi-beam optical systems 200 of the exposure unit 500 and correspondingly The irradiation state (on state and off state) of the m × n beams of the aperture 58a is changed for each aperture 58a, and the intensity of each beam is adjusted using the pattern generator 184. According to this, the intensity of the electron beam generated by the light beam (on-state light beam) passing through each aperture 58a can be adjusted for each electron beam, so that it can be suppressed on the wafer surface of the target. The intensity of each beam of the electron beam is uneven. It is also possible to suppress the occurrence of uneven intensity in the area irradiated with the electron beam on the wafer surface.

又，於曝光裝置1000，係藉由靜電多極70c之第1靜電透鏡70c1，高速且個別地修正因總電流量之變化而產生之起因於庫侖效果之於X軸方向及Y軸方向的縮小倍率(之變化)。又，於曝光裝置1000，係藉由第2靜電透鏡70c2，一次修正因各種振動等引起之射束之照射位置偏差(光學圖案中之明像素、亦即後述切割圖案之投影位置偏差)。 In the exposure device 1000, the first electrostatic lens 70c 1 of the electrostatic multipole 70c is used to quickly and individually correct the effects of the Coulomb effect on the X-axis direction and the Y-axis direction due to changes in the total current amount. Reduce the magnification (change). In the exposure device 1000, the second electrostatic lens 70c 2 is used to correct the irradiation position deviation (the bright pixel in the optical pattern, that is, the projection position deviation of the cutting pattern described later) caused by various vibrations and the like at one time.

據此，例如能在以使用ArF液浸曝光裝置之雙層佈局等於晶圓上之例如45個照射區域之各個預先形成之以X軸方向為週期方向之微細線與空間圖案之所欲線上之所欲位置形成切割圖案，而能進行高精度且高產量之曝光。 According to this, for example, a two-layer layout using an ArF liquid immersion exposure device can be equal to a predetermined line of each of the 45 irradiated areas on a wafer, for example, a microline and a space pattern on a desired line formed in the X-axis direction as a periodic direction. A cutting pattern is formed at a desired position, and high-precision and high-yield exposure can be performed.

因此，使用本實施形態之曝光裝置1000進行前述之互補性微影，進行L/S圖案之切斷之情形時，即使是在各多光束光學系統200，通過複數個孔徑58a中任一孔徑58a之射束成為on狀態之情形時，換言之，無論成on狀態之射束之組合為何，皆能在於晶圓上之例如45個照射區域之各個預先形成之以X軸方向為週期方向之微細線與空間圖案中之所欲線上之所欲位置形成切割圖案。 Therefore, when using the exposure apparatus 1000 of this embodiment to perform the aforementioned complementary lithography and cut the L / S pattern, even in each of the multi-beam optical systems 200, any one of the plurality of apertures 58a passes through the apertures 58a. When the beam becomes the on state, in other words, regardless of the combination of the beams that are in the on state, each of the 45 irradiated areas on the wafer can be formed in advance with fine lines with the X-axis direction as the periodic direction. Form a cutting pattern with a desired position on a desired line in the space pattern.

又，上述實施形態中，DMD184之K個反射鏡185p,q，係被分為由 與m×n個微透鏡188i，j對應之分別由α×β個反射鏡185p,q構成之m×n群，就每一群，使所需數量之光束射入對應之微透鏡，並使來自各微透鏡之各個光束照射於1個孔徑58a，但不限定於此。例如，可僅使照射於部分孔徑58a之複數條光束、例如僅使照射於2個孔徑58a之光束，由來自DMD184之(2以上之反射鏡)2以上之光束生成(以微透鏡聚光而生成)。此外，上述實施形態中，雖係使相鄰之α×β個反射鏡185p,q為1個群，但不限於此，各個群所屬之複數個反射鏡185p,q可以不相鄰，各個群所屬之反射鏡185p,q之數量亦可不同。群之分法可以變更。重要的是，只要能使因光束照射於光電元件54而產生之複數條電子束之各個成為所欲強度之方式，控制來自DMD184(K個反射鏡185p,q)、射入微透鏡188i，j之各個之光束即可。 Further, the above-described embodiment, DMD184 K of mirrors 185 p, q, respectively, by the system is divided into α × β by the reflecting mirrors 185 p and the m × n microlenses 188 i, j corresponding to, q composed of For each group of m × n, a desired number of light beams are incident on the corresponding microlenses, and each light beam from each microlens is irradiated to one aperture 58a, but it is not limited to this. For example, only a plurality of light beams irradiated to a part of the aperture 58a, for example, only a plurality of light beams irradiated to two apertures 58a, may be generated from a light beam of 2 or more (mirror 2 or more) from the DMD 184 (condensed by a micro lens) generate). In addition, in the above-mentioned embodiment, although the adjacent α × β mirrors 185 p, q are a group, the present invention is not limited to this, and the plurality of mirrors 185 p, q to which each group belongs may not be adjacent. The number of mirrors 185 p, q to which each group belongs can also be different. Group division method can be changed. It is important that, as long as each of the plurality of electron beams generated by the light beam irradiating the photoelectric element 54 is made into a desired intensity, the light from the DMD 184 (K mirrors 185 p, q ) and the microlens 188 i are controlled. , Each beam of j is sufficient.

又，上述實施形態中，雖係說明作為聚光構件，使用具有m行n列之矩陣狀配置之m×n個微透鏡188i，j(i=1~m、j=1~n)之一體的微透鏡陣列187之情形，但不限於此，聚光構件可分為若干部分。 In the above-mentioned embodiment, it is explained that as the light-concentrating member, m × n microlenses 188 i, j (i = 1 ~ m, j = 1 ~ n) having a matrix arrangement of m rows and n columns are used. In the case of the integrated micro-lens array 187, but is not limited thereto, the light-condensing member may be divided into several parts.

又，上述實施形態中，雖係針對將圖案產生器184以控制各反射鏡(可動反射元件)之傾斜角度的數位微反射鏡元件(Digital Micromirror Device)構成之情形做了例示，但不限於此，亦可將各反射鏡(可動反射元件)可在與基準面(或反射面)正交之方向變位之元件用作為圖案產生器。此場合，可變更來自2以上之可動反射元件中之1個之光、與來自2以上之可動反射元件中之另1個之光間之相位差，藉由控制來自各反射鏡之光之相位，即能控制從圖案產生器射出之光束(射入聚光構件之光束之強度)。 In the above-mentioned embodiment, the case where the pattern generator 184 is configured with a digital micromirror device (Digital Micromirror Device) that controls the inclination angle of each mirror (movable reflective element) is illustrated, but it is not limited to this. It is also possible to use an element in which each mirror (movable reflecting element) can be displaced in a direction orthogonal to the reference plane (or reflecting plane) as a pattern generator. In this case, the phase difference between the light from one of the two or more movable reflective elements and the light from the other one of the two or more movable reflective elements can be changed, and the phase of the light from each mirror can be controlled. That is, it can control the light beam emitted from the pattern generator (the intensity of the light beam incident on the condensing member).

又，亦可使用具有反射型液晶顯示元件或GLV(註冊商標、Grating Light Valve)、PLV(Planer Light Valve)等之複數個可動反射元件的反射型空間光調變器來構成圖案產生器184。或者，根據光照射裝置180內部之光學系統之構成，亦可以各種穿透型空間光調變器來構成圖案產生器。在使用與上述數位 微反射鏡元件不同之圖案產生器之情形時，亦可將來自圖案產生器之複數位置(在XY平面內互異之位置)之複數條光束以1個微透鏡加以聚光後，照射於光電元件54之聚光位置(例如，前述第1位置)，亦可調整射入各個微透鏡之光束之數量，以調整照射於光電元件54之聚光位置(例如，前述第1位置)之光束之強度。又，圖案產生器184，只要是可提供能個別控制之複數條光束之圖案產生器的話，不限於空間光調變器，除射束之on/off是必須外，亦可使用可進行強度調整、尺寸變更之圖案產生器。此外，圖案產生器184之射束控制(on/off、強度調整、尺寸變更等)不一定是可就各個光束進行，可以是僅針對部分射束、或針對每複數條射束進行。 In addition, the pattern generator 184 may be configured using a reflective spatial light modulator having a reflective liquid crystal display element, a plurality of movable reflective elements such as GLV (registered trademark, Grating Light Valve), and PLV (Planer Light Valve). Alternatively, depending on the configuration of the optical system inside the light irradiating device 180, the pattern generator may be constituted by various transmissive spatial light modulators. In the case of using a pattern generator different from the above-mentioned digital micro-mirror element, a plurality of light beams from a plurality of positions (positions different from each other in the XY plane) of the pattern generator can also be focused by one micro lens Then, the light condensing position (for example, the aforementioned first position) of the photovoltaic element 54 may be adjusted, and the number of light beams entering each microlens may also be adjusted to adjust the light condensing position (for example, the aforementioned first Position) of the beam. The pattern generator 184 is not limited to a spatial light modulator as long as it is a pattern generator capable of providing a plurality of beams that can be individually controlled. In addition to the on / off of the beam, it is also possible to use intensity adjustment. , Size change pattern generator. In addition, the beam control (on / off, intensity adjustment, size change, etc.) of the pattern generator 184 may not necessarily be performed for each beam, but may be performed only for a partial beam or for each plural beams.

相當於上述實施形態之光學單元18B之光學單元之構成，可有各種型式。圖12中顯示了各種型式之光學單元之構成例。圖12(A)所示之光學單元可稱之為L型反射式，具備：包含在XZ平面上以既定位置關係2維配置之複數個照明系統的照明系統單元IU、在相對XY平面傾斜45度之底座BS之一面以和複數個照明系統個別對應之位置關係二維配置的複數個圖案產生器84、以及包含以和複數個圖案產生器184及對應之光電元件個別對應之位置關係在XY平面上二維配置之複數個投影光學系統的光學單元IMU。複數個投影光學系統各個之光軸，雖省略圖示，但係與對應之電子束光學系統之光軸一致。此場合，圖案產生器184係與上述實施形態相同的以反射型空間光調變器構成。此L型反射式，具有對圖案產生器之存取容易、對圖案產生器受光面尺寸之限制較前述實施形態等緩和等之優點。 The configuration of the optical unit corresponding to the optical unit 18B of the above embodiment can be various types. Fig. 12 shows a configuration example of various types of optical units. The optical unit shown in FIG. 12 (A) can be referred to as an L-type reflection type, and includes an illumination system unit IU including a plurality of illumination systems arranged in a two-dimensional arrangement in a predetermined positional relationship on the XZ plane, and inclined at 45 relative to the XY plane. One side of the base BS of the degree is arranged in a two-dimensional manner with a plurality of pattern generators 84 respectively corresponding in positional relationship with each of the plurality of lighting systems, and includes a plurality of pattern generators 184 and a corresponding positional relationship with the corresponding photoelectric elements in XY. Optical unit IMU of a plurality of projection optical systems arranged two-dimensionally on a plane. Although not shown, the optical axes of the plurality of projection optical systems are the same as those of the corresponding electron beam optical systems. In this case, the pattern generator 184 is configured as a reflective spatial light modulator similar to the embodiment described above. This L-type reflection type has the advantages of easy access to the pattern generator and restrictions on the size of the light-receiving surface of the pattern generator compared to the aforementioned embodiments.

圖12(B)所示之光學單元，可稱為U型反射式，具備：包含在XY平面上以既定位置關係二維配置之複數個照明系統的照明系統單元IU、在相對XY平面傾斜-45度之底座BS1之一面以和複數個照明系統個別對應之位置關係二維配置的複數個反射型空間光調變器1841、在相對XY平面傾斜45度之底座 BS2之一面以和複數個空間光調變器1841對應之位置關係二維配置的複數個反射型空間光調變器1842、以及包含以和複數個空間光調變器1842及對應之光電元件個別對應之位置關係在XY平面上二維配置之複數個投影光學系統的光學單元IMU。複數個投影光學系統各個之光軸雖省略圖示，但係與對應之電子束光學系統之光軸一致。此場合，例如當將其中一方之反射型空間光調變器1842用作為圖案產生器時，即能將另一方之空間光調變器1841用作為具有高解析能力的照度分布調整裝置。 The optical unit shown in FIG. 12 (B) can be called a U-type reflection type, and includes an illumination system unit IU including a plurality of illumination systems arranged two-dimensionally in a predetermined positional relationship on the XY plane, and inclined relative to the XY plane- One surface of the 45-degree base BS 1 is two-dimensionally arranged in a two-dimensional arrangement with a plurality of reflection-type spatial light modulators 184 1 , and one surface of the base BS 2 inclined at a 45-degree angle with respect to the XY plane. The positional relationships corresponding to the plurality of spatial light modulators 184 1 are two-dimensionally arranged, a plurality of reflective spatial light modulators 184 2 , and a plurality of spatial light modulators 184 2 and corresponding optical elements are individually corresponding to each other. An optical unit IMU of a plurality of projection optical systems arranged in a two-dimensional position on the XY plane. Although the optical axis of each of the plurality of projection optical systems is omitted, it is consistent with the optical axis of the corresponding electron beam optical system. In this case, for example, when one of the reflection type spatial light modulators 184 2 is used as a pattern generator, the other spatial light modulator 184 1 can be used as an illuminance distribution adjustment device having a high resolution capability.

圖12(C)所示之光學單元，可稱為直筒穿透型式，係照明系統與圖案產生器184與投影光學系統配置在同一光軸上而構成之複數個光學系統(光照射裝置180A)，以和複數個光電元件對應之既定位置關係在同一箱體(鏡筒)78內XY2維配置者。複數個光照射裝置180A之光軸與對應之電子束光學系統之光軸一致。於此直筒穿透型式，圖案產生器184須使用穿透型之空間光調變器、例如穿透型之液晶顯示元件等。直筒穿透型式，具有易保障各軸之精度、鏡筒尺寸小巧、以及能因應分別使用圖13(A)及圖13(B)後述之2方式之兩者的優點。 The optical unit shown in FIG. 12 (C) can be called a straight-through type, which is a plurality of optical systems (light irradiation device 180A) formed by arranging the illumination system, the pattern generator 184, and the projection optical system on the same optical axis. XY 2-dimensionally arranged in the same box (lens barrel) 78 with a predetermined positional relationship corresponding to a plurality of photoelectric elements. The optical axes of the plurality of light irradiation devices 180A are consistent with the optical axes of the corresponding electron beam optical systems. In this straight-through type, the pattern generator 184 must use a transmissive spatial light modulator, such as a transmissive liquid crystal display element. The straight-through type has the advantages of easily ensuring the accuracy of each axis, the compact size of the lens barrel, and the ability to use the two methods described later in Fig. 13 (A) and Fig. 13 (B) respectively.

圖12(D)中簡略顯示了與上述實施形態之曝光裝置1000所採用之光學單元18B同樣型式之光學單元。此圖12(D)所示之光學單元，可稱之為直筒反射型式，具有與直筒穿透型式相同之優點。 FIG. 12 (D) schematically shows an optical unit of the same type as the optical unit 18B used in the exposure apparatus 1000 of the above embodiment. The optical unit shown in FIG. 12 (D) can be called a straight reflection type and has the same advantages as the straight transmission type.

上述實施形態中，雖係透過孔徑58a將光照射於光電層60，但亦可不使用孔徑。 In the above-mentioned embodiment, although the light is irradiated to the photovoltaic layer 60 through the aperture 58a, the aperture may not be used.

亦可例如圖13(A)所示，將以圖案產生器形成之光圖案像投影於光電元件上，進一步以光電元件轉換為電子像縮小成像於晶圓面上。亦即，即使沒有孔徑，只要是能將具有所欲剖面形狀(含大小)之光束照射於光電元件54，則亦可不配置孔徑。 For example, as shown in FIG. 13 (A), a light pattern image formed by a pattern generator may be projected on a photoelectric element, and the photoelectric element may be converted into an electronic image to be reduced and imaged on a wafer surface. That is, even if there is no aperture, as long as a light beam having a desired cross-sectional shape (including a size) can be irradiated to the photovoltaic element 54, the aperture may not be arranged.

上述實施形態中，如圖13(B)所示，係透過複數個孔徑將光照射於光電層。如上所述，藉由孔徑之使用，即能不受圖案產生器與光電元件間之投影光學系統之像差等之影響，使具有所欲剖面形狀之光束射入光電層。又，孔徑與光電層(光電元件)可如前述實施形態般形成為一體，亦可透過既定間隙對向配置。 In the above embodiment, as shown in FIG. 13 (B), light is irradiated to the photovoltaic layer through a plurality of apertures. As described above, by using the aperture, a beam having a desired cross-sectional shape can be incident on the photoelectric layer without being affected by the aberration of the projection optical system between the pattern generator and the photoelectric element. In addition, the aperture and the photovoltaic layer (optical element) may be formed as one body as in the aforementioned embodiment, or they may be arranged to face each other through a predetermined gap.

於本實施形態之曝光裝置1000，由於係在真空間隔壁132之外另設有光電元件54，因此亦可具有以下之功能。 In the exposure apparatus 1000 of this embodiment, since the photoelectric element 54 is provided in addition to the vacuum partition wall 132, it can also have the following functions.

若為了增加電子束光學系統之數量而縮小鏡筒之直徑的時，電子束光學系統之像面彎曲成分將變得明顯。例如電子束光學系統作為像差具有圖14中以式亦方式所示之像面彎曲之情形時，如圖14之示意，會使光電層60(正確地說，應是光電元件54全體)撓曲，而在光電層60產生與像面之彎曲成分相反相位之彎曲，亦即使光電層60之電子射出面彎曲(變成非平面)。藉此，補償電子束光學系統70之像面彎曲之至少一部分，抑制因像面彎曲引起之電子束像之位置偏移、模糊(散焦)等。又，亦可將光電層60之電子射出面之彎曲量做成可變。例如，可根據電子束光學系統70之光學特性(像差、例如像面彎曲)之變化，改變電子射出面之彎曲量。因此，可分別視對應之電子束光學系統之光學特性，在複數個光電元件54彼此間使電子射出面之彎曲量相異。此外，圖14中，雖係例示了使光電層60產生往+Z方向(朝向投影光學系統60)凸之彎曲的情形，此係因為假設電子束光學系統作為像差而具有往-Z方向凸之像面彎曲的情形，而對光電層60賦予抵消或降低此像面彎曲之影響的彎曲之故。因此，在電子束光學系統作為其像差而具有往+Z方向凸之像面彎曲之情形，必須使光電層60產生往-Z方向凸之彎曲。 If the diameter of the lens barrel is reduced in order to increase the number of electron beam optical systems, the image surface bending component of the electron beam optical system becomes obvious. For example, when the electron beam optical system has an aberration as shown in FIG. 14 and the image plane is curved, as shown in FIG. 14, the photovoltaic layer 60 (to be precise, the entire photovoltaic element 54) will be scratched. Even when the electron emitting surface of the photoelectric layer 60 is bent (becomes non-planar), a curvature is generated in the photoelectric layer 60 in a phase opposite to the curvature component of the image plane. Thereby, at least a part of the image plane curvature of the electron beam optical system 70 is compensated, and the position shift, blurring (defocusing), etc. of the electron beam image caused by the image plane curvature are suppressed. Moreover, the amount of curvature of the electron emission surface of the photoelectric layer 60 may be made variable. For example, the amount of curvature of the electron emission surface can be changed in accordance with changes in the optical characteristics (aberrations, such as curvature of the image plane) of the electron beam optical system 70. Therefore, depending on the optical characteristics of the corresponding electron beam optical system, the amount of bending of the electron exit surface can be different between the plurality of photoelectric elements 54. In addition, in FIG. 14, although the case where the photoelectric layer 60 is convexly curved toward the + Z direction (toward the projection optical system 60) is illustrated, it is assumed that the electron beam optical system has convexity toward the -Z direction as aberration. In the case where the image plane is curved, the photoelectric layer 60 is given a curvature that cancels or reduces the influence of the image plane curvature. Therefore, in the case where the electron beam optical system has a curvature of the image plane convex in the + Z direction as its aberration, it is necessary to cause the photoelectric layer 60 to be curved convex in the -Z direction.

又，於本實施形態之曝光裝置1000，係採用於X軸方向長之矩形曝光場，因此如圖14中以短雙箭頭所示，即使是1方向之彎曲(繞一軸之彎曲、 亦即於X軸方向之彎曲、在XZ剖面內之彎曲)效果亦高。此外，不僅是使光電元件54(光電層60)往1方向彎曲，當然亦可使4角往下方撓曲等之3維變形。藉由改變光電元件54之變形方式，即能有效抑制因球面像差引起之光學圖案像之位置偏移、變形等。當使光電層60之電子放射面彎曲時，該電子放射面之一部分(例如中央部)與其他部分(例如周邊部)之間，於電子束光學系統70之光軸Axe之方向，位置將互異。 In addition, in the exposure device 1000 of this embodiment, a rectangular exposure field that is long in the X-axis direction is used. Therefore, as shown by a short double arrow in FIG. 14, even a bend in one direction (a bend around one axis, that is, Bending in the X-axis direction and bending in the XZ section are also effective. In addition, not only the photovoltaic element 54 (photoelectric layer 60) is bent in one direction, but of course, three-dimensional deformation such as bending the four corners downward is also possible. By changing the deformation mode of the photoelectric element 54, it is possible to effectively suppress the positional shift and deformation of the optical pattern image caused by the spherical aberration. When the electron emission surface of the photoelectric layer 60 is bent, a part of the electron emission surface (for example, the central part) and other parts (for example, the peripheral part) are positioned in the direction of the optical axis Axe of the electron beam optical system 70. different.

又，亦可使光電層60之厚度具有分布，以使電子放射面之一部分(例如中央部)與另一部分(例如周邊部)於光軸AXe之方向之位置相異。亦可使形成光電層60之面(例如，圖3之基材56之下面)彎曲、或於該面(例如，圖3之基材56之下面)設置段差。 In addition, the thickness of the photoelectric layer 60 may be distributed so that the position of one part (for example, the central part) and the other part (for example, the peripheral part) of the electron emission surface are different from each other in the direction of the optical axis AXe. The surface on which the photovoltaic layer 60 is formed (for example, below the substrate 56 in FIG. 3) may be bent, or a step may be provided on the surface (for example, below the substrate 56 in FIG. 3).

又，在使用如光電元件54般之孔徑與光電層一體設置之所謂的孔徑一體型光電元件情形時，可將該孔徑一體型光電元件設置成可在XY平面內移動之致動器。於此場合，例如，作為孔徑一體型光電元件，可使用如圖15所示之每隔1列形成有節距a之孔徑58a之列、與節距b之孔徑58b之列的多節距型孔徑一體型光電元件54a。不過，於此場合，會並用使用前述光學特性調整裝置87來變更X軸方向之投影倍率(倍率)的縮放(zoom)功能。於此場合，如圖16(A)所示，從對孔徑一體型光電元件54a之孔徑58a之列照射光束之狀態，使用光學特性調整裝置87放大投影光學系統186之X軸方向之倍率，如圖16(B)中之雙箭頭所示，將複數射束整體於X軸方向放大後，如圖16(C)中之塗白箭頭所示，於+Y方向移動孔徑一體型光電元件54a，即能將光束照射於孔徑58b之列。據此，即能形成節距相異之線圖案切斷用之切割圖案。不過，視射束之尺寸、形狀，不一定必須使用投影光學系統186之縮放功能，僅移動孔徑一體型光電元件54a，即能將光束切換照射於節距為a之孔徑58a之列與節距為b之孔徑58b之列。重要的是，無論在切換前後之任一狀態下，複數射束(雷射射束)之各個照射 到包含對應之孔徑58a或58b之光電元件54a上之區域即可。亦即，只要光電元件54a上之複數個孔徑58a或58b各個之尺寸，較對應之射束之剖面尺寸小即可。 In the case of using a so-called aperture-integrated photovoltaic element in which the aperture and the photovoltaic layer are integrally provided like the photovoltaic element 54, the aperture-integrated photovoltaic element may be provided as an actuator that can move in the XY plane. In this case, for example, as the aperture-integrated photovoltaic element, a multi-pitch type having a pitch 58 a with a pitch a and a pitch 58 b with a pitch b can be used as shown in FIG. 15. Aperture-integrated photovoltaic element 54a. However, in this case, a zoom function using the aforementioned optical characteristic adjustment device 87 to change the projection magnification (magnification) in the X-axis direction is used. In this case, as shown in FIG. 16 (A), the state of irradiating the beam from the aperture 58a of the aperture-integrated photoelectric element 54a is used, and the optical characteristic adjustment device 87 is used to enlarge the magnification in the X-axis direction of the projection optical system 186, such as As shown by the double arrows in FIG. 16 (B), the entire complex beam is enlarged in the X-axis direction, and as shown by the white arrows in FIG. 16 (C), the aperture-integrated photovoltaic element 54a is moved in the + Y direction. That is, the light beam can be irradiated to the column of the aperture 58b. Accordingly, a cutting pattern for cutting line patterns having different pitches can be formed. However, depending on the size and shape of the beam, it is not necessary to use the zoom function of the projection optical system 186. By moving only the aperture-integrated photoelectric element 54a, the beam can be switched to irradiate the array and pitch of the aperture 58a with a pitch of a. It is the column of the aperture 58b of b. It is important that each of the plurality of beams (laser beams) is irradiated to the area on the photoelectric element 54a including the corresponding aperture 58a or 58b in any state before and after switching. That is, as long as the size of each of the plurality of apertures 58a or 58b on the photoelectric element 54a is smaller than the cross-sectional size of the corresponding beam.

又，亦可做成將節距互異之3種類以上之孔徑之列形成在光電元件之遮光膜58上，並以和上述同樣之順序進行曝光，以能因應3個以上節距之切割圖案之形成。 In addition, it is also possible to form a column of three or more apertures with different pitches on the light-shielding film 58 of the photovoltaic element, and perform exposure in the same order as described above, so that it can respond to cutting patterns with three or more pitches. Formation.

如上所述，當變更投影光學系統186之倍率時，光束(雷射光束)在被照射面內之每單位面積之光束強度即會改變，因此亦可預先以模擬等方式求出倍率變化與光束強度變化之關係，根據該關係來變更(調整)光束之強度。或者，亦可以感測器檢測變更倍率時之部分光束之強度，根據該檢測之強度資訊變更(調整)光束之強度。後者之情形，可如圖2(A)及圖2(B)所示，在光電元件54之基材上面之一端部設置感測器135，藉由上述致動器驅動光電元件54來使感測器135能移動至XY平面內之所欲位置。此外，亦可將光電元件54做成不僅僅是能在XY平面內移動，亦能在與光軸AXe平行之Z軸方向移動、或相對XY平面傾斜、或繞與光軸Axe平行之Z軸旋轉。 As mentioned above, when the magnification of the projection optical system 186 is changed, the intensity of the light beam (laser beam) per unit area in the illuminated surface will change. Therefore, the magnification change and the beam can also be obtained in advance by simulation and other methods. The relationship of the intensity change is to change (adjust) the intensity of the light beam based on the relationship. Alternatively, the sensor may detect the intensity of a part of the light beam when the magnification is changed, and change (adjust) the intensity of the light beam based on the detected intensity information. In the latter case, as shown in FIG. 2 (A) and FIG. 2 (B), a sensor 135 may be provided at one end of the upper surface of the substrate of the photovoltaic element 54 and the photoelectric element 54 is driven by the actuator to make the sensor The measuring device 135 can be moved to a desired position in the XY plane. In addition, the optoelectronic element 54 can also be made to move not only in the XY plane, but also in the Z-axis direction parallel to the optical axis AXe, or inclined relative to the XY plane, or about the Z-axis parallel to the optical axis Axe. Spin.

又，以上雖未特別說明，但由於光電層60具有某程度之面積，因此無法保證其面內之光電轉換效率均勻，光電層60具有光電轉換效率之面內分布的想法是較實際的。因此，可根據光電層60之光電轉換效率之面內分布，進行照射於光電元件之光束之強度調整。亦即，若假設光電層60具有第1光電轉換效率之第1部分與第2光電轉換效率之第2部分時，可分別根據第1光電轉換效率及第2光電轉換效率，調整照射於第1部分之光束之強度及照射於第2部分之光束之強度。或者，亦可以補償第1光電轉換效率與第2光電轉換效率之差異的方式，調整照射於第1部分之光束之強度與照射於第2部分之光束之強度。此外，亦有複數個光電元件54之各個具有相異之光電轉換效率之情形。此場合，亦可調整照射於各光電元件之至少1光束之強度，以將從各個光電元件生成之電子束之強 度以所欲狀態加以設定。 Although not specifically described above, since the photoelectric layer 60 has a certain area, the in-plane photoelectric conversion efficiency cannot be guaranteed to be uniform, and the idea that the photoelectric layer 60 has in-plane distribution of the photoelectric conversion efficiency is more practical. Therefore, according to the in-plane distribution of the photoelectric conversion efficiency of the photoelectric layer 60, the intensity adjustment of the light beam irradiated to the photoelectric element can be performed. That is, if it is assumed that the photoelectric layer 60 has the first part of the first photoelectric conversion efficiency and the second part of the second photoelectric conversion efficiency, the irradiation on the first layer can be adjusted according to the first photoelectric conversion efficiency and the second photoelectric conversion efficiency, respectively. The intensity of the part of the beam and the intensity of the beam irradiated on part 2. Alternatively, the difference between the first photoelectric conversion efficiency and the second photoelectric conversion efficiency may be compensated, and the intensity of the light beam irradiated on the first portion and the intensity of the light beam irradiated on the second portion may be adjusted. In addition, each of the plurality of photoelectric elements 54 may have different photoelectric conversion efficiency. In this case, the intensity of at least one light beam irradiated to each photoelectric element may be adjusted to set the intensity of the electron beam generated from each photoelectric element in a desired state.

又，上述實施形態雖係針對光電元件54之基材56與形成有孔徑58a之遮光膜58與光電層60係一體之情形、亦即使用孔徑一體型光電元件54之情形做了說明，但基材、遮光膜(孔徑膜)、以及光電層，可有各種配置。 In addition, although the above embodiment has described the case where the base material 56 of the photovoltaic element 54 and the light-shielding film 58 formed with the aperture 58a and the photovoltaic layer 60 are integrated, that is, the case where the aperture-integrated photovoltaic element 54 is used, Materials, light-shielding films (aperture films), and photovoltaic layers are available in various configurations.

本實施形態之曝光裝置1000中，例如可取代孔徑一體型光電元件54，使用孔徑板(孔徑構件)與光電元件非為一體之所謂的孔徑非一體型光電元件。圖17(A)所示之孔徑非一體型光電元件138，包含在基材56之下面(光射出面)形成光電層60而構成的光電元件140、與在光電元件140之基材56上方(光射入面側)形成有以相距例如1μ以下之既定間隙配置之多數個孔徑58a之遮光構件構成的孔徑板142。 In the exposure apparatus 1000 of this embodiment, for example, instead of the aperture-integrated photoelectric element 54, a so-called aperture non-integrated photovoltaic element in which the aperture plate (aperture member) is not integral with the photovoltaic element can be used. The aperture non-integrated photovoltaic element 138 shown in FIG. 17 (A) includes a photovoltaic element 140 formed by forming a photovoltaic layer 60 under the substrate 56 (light exit surface), and above the substrate 56 of the photovoltaic element 140 ( The light-incident surface side) is formed with an aperture plate 142 having a plurality of apertures 58a arranged with a predetermined gap, for example, a predetermined gap of 1 μ or less.

孔徑非一體型光電元件之情形，照射於光電層60之光束之形狀，與孔徑一體型光電元件會略為惡化(欠缺鮮明度)但可使孔徑板相對光電元件移動。因此，使用孔徑非一體型光電元件之情形，可設置能使孔徑板142在XY平面內移動之驅動機構。於此場合，將與前述孔徑一體型光電元件54a相同之多節距型孔徑形成在孔徑板142，並藉由使用投影光學系統186之倍率之放大功能、以及使光電元件140與孔徑板142在維持兩者之位置關係之狀態下移動之功能，即能以和前述同樣之順序，形成節距相異之線圖案之切斷用切割圖案。除此之外，亦可再設置能使光電元件140在XY平面內移動之驅動機構。此場合，可取代移動孔徑板142，而使光電元件140與孔徑板142在維持兩者之位置關係之狀態下移動。又，於此場合，例如，可藉由僅驅動光電元件140及孔徑板142中之一方，以使孔徑板142與光電元件140在XY平面內之相對位置錯開，據以謀求光電層60之長壽命。又，亦可以是相對孔徑板142使投影光學系統186能在XY平面內移動之構成。此外，孔徑板142不僅僅是能在XY平面內移動，亦可以是能往與光軸AXe平行之Z軸方向移動、或可相對XY平面傾斜、或可繞與光軸AXe 平行之Z軸旋轉之構成，再者，亦可將光電元件140與孔徑板142之間隙做成可調整。 In the case of a non-integrated aperture type photovoltaic element, the shape of the light beam irradiated on the photovoltaic layer 60 is slightly deteriorated (lack of sharpness), but the aperture plate can be moved relative to the photovoltaic element. Therefore, when a non-integrated aperture type photovoltaic element is used, a driving mechanism capable of moving the aperture plate 142 in the XY plane can be provided. In this case, the same multi-pitch aperture as the aperture-integrated photoelectric element 54a is formed in the aperture plate 142, and the magnification function using the magnification of the projection optical system 186 is used, and the photoelectric element 140 and the aperture plate 142 are formed in The function of moving while maintaining the positional relationship between the two can form cutting patterns for cutting line patterns with different pitches in the same order as described above. In addition, a driving mechanism capable of moving the photoelectric element 140 in the XY plane may be further provided. In this case, instead of moving the aperture plate 142, the photoelectric element 140 and the aperture plate 142 can be moved while maintaining the positional relationship between them. In this case, for example, by driving only one of the photovoltaic element 140 and the aperture plate 142, the relative position of the aperture plate 142 and the photovoltaic element 140 in the XY plane can be staggered, thereby obtaining the length of the photovoltaic layer 60. life. It is also possible to adopt a configuration in which the projection optical system 186 can be moved in the XY plane with respect to the aperture plate 142. In addition, the aperture plate 142 can move not only in the XY plane, but also in a Z-axis direction parallel to the optical axis AXe, or can be tilted relative to the XY plane, or can be rotated about a Z-axis parallel to the optical axis AXe. In addition, the gap between the photoelectric element 140 and the aperture plate 142 can be adjusted.

又，使用孔徑非一體型光電元件之情形時，可僅設置使光電元件140移動之驅動機構。於此場合，亦可藉由使光電元件140在XY平面內移動，據以謀求光電層60之長壽命。 When a non-integrated aperture type photovoltaic element is used, only a driving mechanism for moving the photovoltaic element 140 may be provided. In this case, by moving the photoelectric element 140 in the XY plane, a long life of the photovoltaic layer 60 can be achieved.

於本實施形態之曝光裝置1000，使用孔徑非一體型光電元件138之情形時，可做成使光電元件140以致動器相對孔徑板142及光照射裝置180在XY平面內移動之構成。據此，即可視需要透過孔徑58a變更照射於光電層60之光束在光電層60上之照射位置，延長光電層60之壽命。又，亦可做成相對於被固定之光電元件140，使孔徑板142及光照射裝置180能在XY平面內移動之構成。或者，亦可做成相對被固定之光電元件140，使DMD184、微透鏡陣列187及投影光學系統186之全體、以及孔徑板142，分別能於Y軸方向移動之構成。 In the case of using the non-integrated aperture-type photoelectric element 138 in the exposure device 1000 of this embodiment, a configuration can be adopted in which the photoelectric element 140 is moved by an actuator relative to the aperture plate 142 and the light irradiation device 180 in the XY plane. According to this, the irradiation position of the light beam irradiated on the photovoltaic layer 60 on the photovoltaic layer 60 can be changed through the aperture 58 a as necessary, thereby extending the life of the photovoltaic layer 60. In addition, a configuration in which the aperture plate 142 and the light irradiation device 180 can be moved in the XY plane with respect to the fixed photoelectric element 140 may be adopted. Alternatively, a relatively fixed optoelectronic element 140 may be formed so that the entire DMD 184, the micro lens array 187 and the projection optical system 186, and the aperture plate 142 can be moved in the Y-axis direction, respectively.

又，亦可對孔徑板142施加例如在XY平面內既定方向之拉伸力，以使孔徑板142在XY平面內伸縮變形，據以動態的修正電子束光學系統70之倍率、及低次畸變。 Also, for example, a tensile force in a predetermined direction in the XY plane may be applied to the aperture plate 142 to cause the aperture plate 142 to expand and contract in the XY plane to dynamically correct the magnification of the electron beam optical system 70 and low-order distortion. .

又，在使用上述實施形態所說明之孔徑一體型光電元件之情形時，亦可設置移動光電元件54之驅動機構。此場合，若例如在光電元件追加預備之孔徑的話，則亦能藉由使光電元件54在XY平面內移動，據以謀求光電層60之長壽命。 When the aperture-integrated photovoltaic element described in the above embodiment is used, a driving mechanism for moving the photovoltaic element 54 may be provided. In this case, if a prepared aperture is added to the photovoltaic element, for example, the photovoltaic element 60 can be moved in the XY plane to achieve a long life of the photovoltaic layer 60.

此外，亦可並用上述孔徑板之孔徑與光電元件之孔徑。亦即，可在前述孔徑一體型光電元件之光束射入側配置孔徑板，使透過孔徑板之孔徑之光束透過孔徑一體型光電元件之孔徑射入光電層。 In addition, the pore diameter of the aperture plate and the pore diameter of the photovoltaic element may be used in combination. That is, an aperture plate may be arranged on the light incident side of the aforementioned aperture-integrated photoelectric element, so that a beam passing through the aperture of the aperture plate passes through the aperture of the aperture-integrated photoelectric element and enters the photovoltaic layer.

又，在節距相異之線圖案切斷用之切割圖案形成時，使用上述孔徑非一體型光電元件之場合，可更換孔徑板。 When forming a cutting pattern for cutting line patterns with different pitches, when the above-mentioned aperture non-integrated photovoltaic element is used, the aperture plate can be replaced.

又，使用上述孔徑非一體型光電元件之情形時，可取代孔徑板，使用穿透型液晶元件等之空間光調變器來形成複數個孔徑。 When the above-mentioned aperture non-integrated photovoltaic element is used, a plurality of apertures may be formed by using a spatial light modulator such as a transmissive liquid crystal element instead of the aperture plate.

又，以上雖係針對形成節距相異之線圖案之切斷用切割圖案之際，使用投影光學系統186之倍率放大功能之情形做了說明，但亦可取代倍率之變更，設置變更從投影光學系統186分別照射於孔徑一體型光電元件54或孔徑板142之同一孔徑列之複數個孔徑之複數條光束之節距的裝置。例如，可在投影光學系統186與光電元件之間之光路中，配置複數個平行平板，藉由改變其傾斜角來變更複數條光束之節距。 In addition, although the above has described the case of using the magnification function of the projection optical system 186 when forming cutting patterns for cutting line patterns with different pitches, it is possible to replace the setting change from projection The optical system 186 is a device that irradiates a plurality of light beams with a plurality of apertures in the same aperture row of the aperture-integrated photoelectric element 54 or the aperture plate 142, respectively. For example, a plurality of parallel flat plates may be arranged in the optical path between the projection optical system 186 and the photoelectric element, and the pitch of the plurality of light beams may be changed by changing the tilt angle thereof.

又，作為孔徑一體型光電元件，不限於圖18(A)所示之型式，亦可如圖18(B)所示，於圖18(A)之光電元件54，使用孔徑58a內之空間被透明膜148填埋之型式的光電元件54b。於光電元件54b，可取代透明膜148，以基材56之一部分填埋孔徑58a內之空間。 In addition, as the aperture-integrated photoelectric element, it is not limited to the type shown in FIG. 18 (A), but as shown in FIG. 18 (B), in the photovoltaic element 54 of FIG. 18 (A), the space within the aperture 58a is used. Photoelectric element 54b of the type in which the transparent film 148 is buried. In the optoelectronic element 54b, instead of the transparent film 148, a part of the substrate 56 is used to fill the space in the aperture 58a.

除此之外，亦可使用如圖18(C)所示，在基材56之上面(光射入面)藉由鉻蒸鍍形成具有孔徑58a之遮光膜58，於基材56之下面(光射出面)形成有光電層60之型式的光電元件54c，或如圖18(D)所示，於圖18(C)之光電元件54c，使用孔徑58a內之空間被透明膜148填埋之型式的光電元件54d。 In addition, as shown in FIG. 18 (C), a light-shielding film 58 having an aperture 58a can be formed on the upper surface (light incident surface) of the base material 56 (light incident surface) by chromium evaporation, and under the base material 56 ( The light emitting surface) is formed by a photovoltaic element 54c of the type having a photovoltaic layer 60, or as shown in FIG. 18 (D), the photovoltaic element 54c in FIG. 18 (C) is filled with a space within the aperture 58a by a transparent film 148. Photoelectric element 54d.

除此之外，亦有如圖18(E)所示之在基材56之下面形成有光電層60，於光電層60之下面形成有具有孔徑58a之鉻膜58之型式的光電元件54e。又，圖18(E)之鉻膜58，具有非遮蔽光而是遮蔽電子之功能。 In addition, as shown in FIG. 18 (E), a photovoltaic layer 60 is formed under the substrate 56, and a photovoltaic element 54e having a chromium film 58 having an aperture 58a is formed below the photovoltaic layer 60. The chromium film 58 in FIG. 18 (E) has a function of shielding electrons instead of shielding light.

以上所說明之孔徑一體型光電元件54、54a、54b、54c、54d、54e之任一者，皆可不僅以石英玻璃，而是以石英玻璃等之光穿透性構件與光穿透性之透明膜(單層、或多層)之積層體構成基材56。 Any of the aperture-integrated photovoltaic elements 54, 54a, 54b, 54c, 54d, and 54e described above may be made of not only quartz glass but also light-transmitting members such as quartz glass and light-transmitting members. A laminated body of a transparent film (single layer or multiple layers) constitutes the base material 56.

又，為了與例如圖17(A)所示之光電元件140一起構成孔徑非一體型光電元件，不限於如孔徑板142之僅由具有孔徑之遮光構件構成之型式 者，亦可使用基材與遮光膜一體之孔徑板。作為此種型式之孔徑板，可使用如圖17(B)所示之在例如由石英構成之基材144之下面(光射出面)藉由鉻蒸鍍形成具有孔徑58a之遮光膜58的孔徑板142a，或使用如圖17(C)所示之由以石英構成之板構件146與透明膜148構成之基材150及在此基材150之下面(光射出面)藉由鉻蒸鍍形成具有孔徑58a之遮光膜58的孔徑板142b，或使用如圖17(D)所示之於孔徑板142a、孔徑58a內之空間被透明膜148填埋的孔徑板142c，或使用如圖17(E)所示之於孔徑板142a、孔徑58a內之空間被基材144之一部分填埋的孔徑板142d。又，無論孔徑板142、142a、142b、142c、142d之任一種，皆能上下反轉使用。此外，基材144、板構件146之材料不限於石英玻璃，只要是例如藍寶石等對用於光學單元18B之光之波長具有穿透性之材料即可。 In addition, in order to form a non-integrated aperture type photovoltaic element together with the photovoltaic element 140 shown in FIG. 17 (A), for example, the aperture plate 142 is not limited to a type composed only of a light shielding member having an aperture. Aperture plate with integrated light-shielding film. As the aperture plate of this type, as shown in FIG. 17 (B), the aperture of the light-shielding film 58 having an aperture 58a can be formed by chromium evaporation under the substrate 144 (light exit surface) made of, for example, quartz. The plate 142a, or a base material 150 made of a plate member 146 made of quartz and a transparent film 148 as shown in FIG. 17 (C), and a lower surface (light emitting surface) of the base material 150 is formed by chromium evaporation. An aperture plate 142b having a light shielding film 58 having an aperture 58a, or an aperture plate 142c in which the space within the aperture plate 142a and the aperture 58a is filled with a transparent film 148 as shown in FIG. 17 (D), or as shown in FIG. 17 ( E) The aperture plate 142d in which the space in the aperture plate 142a and the aperture 58a is partially filled with a part of the substrate 144 is shown. In addition, any of the aperture plates 142, 142a, 142b, 142c, and 142d can be used upside down. In addition, the material of the base material 144 and the plate member 146 is not limited to quartz glass, as long as it is a material that is transparent to the wavelength of light used for the optical unit 18B, such as sapphire.

又，上述實施形態之曝光裝置1000中，亦可取代孔徑一體型光電元件54而使用光電元件140。亦即，可不使用孔徑非一體型光電元件138之孔徑板142。此場合，亦與前述同樣的，晶圓W係一邊往Y軸方向移動一邊藉由被電子束照射之掃描曝光而曝光。此場合，藉由從下述狀態，亦即能於X軸方向以第1節距(例如節距(間隔)a)將複數條光束透過光電元件140之基材56照射於光電層60的第1狀態、與能於X軸方向以第2節距(例如節距(間隔)b)將複數條光束透過光電元件140之基材56照射於光電層60的第2狀態中之一方切換為另一方，即能形成節距相異之線圖案之切斷用切割圖案。此場合，亦可並用投影光學系統186之倍率變更功能。此場合，亦可取代倍率變更，而設置變更從投影光學系統186照射於光電元件140之複數條光束之節距(間隔)的裝置。例如，可在投影光學系統186與光電元件間之光路中，配置複數個平行平板，藉由改變其傾斜角來變更複數條光束之節距(間隔)。此場合，亦可做成可因應3個以上之節距之切割圖案之形成。 Further, in the exposure apparatus 1000 of the above embodiment, the photoelectric element 140 may be used instead of the aperture-integrated photoelectric element 54. That is, the aperture plate 142 of the non-integrated aperture type photovoltaic element 138 may not be used. In this case, as described above, the wafer W is exposed by scanning exposure with an electron beam while moving in the Y-axis direction. In this case, a plurality of light beams can be irradiated to the first layer of the photovoltaic layer 60 through the substrate 56 of the photovoltaic element 140 at a first pitch (for example, the pitch (interval) a) in the X-axis direction from the following state. 1 state, and the second state in which a plurality of light beams can be irradiated to the photoelectric layer 60 through the substrate 56 of the photovoltaic element 140 at a second pitch (for example, pitch (interval) b) in the X-axis direction is switched to another On one side, a cutting pattern capable of forming line patterns with different pitches can be formed. In this case, the magnification changing function of the projection optical system 186 may be used in combination. In this case, instead of changing the magnification, a device for changing the pitch (interval) of a plurality of light beams irradiated from the projection optical system 186 to the photoelectric element 140 may be provided. For example, in the optical path between the projection optical system 186 and the photoelectric element, a plurality of parallel flat plates may be arranged, and the pitch (interval) of the plurality of light beams may be changed by changing the tilt angle thereof. In this case, it is also possible to form a cutting pattern that can respond to three or more pitches.

又，上述實施形態，係針對DMD184之K個反射鏡185p,q係對應微 透鏡陣列187之複數個微透鏡188i，j之配置，將分別對應X軸方向及Y軸方向之方向，分別作為行方向(行變化之方向)、列方向(列變化之方向)配置之情形做了說明。然而，不限於此，例如DMD184之K個反射鏡185p,q，可在晶圓W之掃描曝光時、與晶圓W移動之Y軸方向正交之X軸方向對應之方向配置成一列。此場合，微透鏡陣列187之微透鏡188亦可於X軸方向排列成一列配置。 In addition, the above-mentioned embodiment is for the K mirrors 185 p, q of DMD 184 , and the arrangement of a plurality of micro lenses 188 i, j corresponding to the micro lens array 187 will correspond to the directions of the X-axis direction and the Y-axis direction, respectively A case where the row direction (the direction in which the row changes) and the column direction (the direction in which the column changes) is arranged has been described. However, it is not limited to this. For example, the K mirrors 185 p, q of the DMD 184 may be arranged in a row corresponding to the X-axis direction orthogonal to the Y-axis direction of the movement of the wafer W when the wafer W is scanned and exposed. In this case, the microlenses 188 of the microlens array 187 may be arranged in a row in the X-axis direction.

又，上述實施形態，雖係針對來自圖案產生器184之複數條光束經由微透鏡陣列187(聚光構件)後，透過投影光學系統186(第1光學系統)照射於光電元件54之情形做了說明，但第1光學系統與聚光構件之關係並不限於此。亦可以是例如來自圖案產生器184之複數條光束射入投影光學系統186，透過該投影光學系統186之光束透過微透鏡陣列後照射於光電元件54。此場合，可以是經過投影光學系統186而來自圖案產生器184之複數位置(XY平面內之相異位置)之2以上之光束，以微透鏡陣列之1個微透鏡聚光在光電元件54之光電層60之光射入面或其近旁之面上(例如上述第1位置)的構成。例如，可將投影光學系統186配置成圖案產生器(DMD之反射面)184與微透鏡陣列187之射入面共軛，使射入微透鏡陣列187之複數條光束聚光在光電層60之光射入面(例如圖3之基材56之下面)或其近旁之面。此場合，可將光電層60之光射入面或其近旁之面，視為是微透鏡陣列(聚光構件)187使複數條光束聚光之第1面。重要得的是，只要光照射裝置具備以來自圖案產生器之複數位置之複數條光束能聚光在光電元件54之所欲位置(例如前述第1位置)之方式配置的聚光構件即可。此外，在使射入微透鏡陣列187之複數條光束聚光在光電層60之光射入面(例如圖3之基材56之下面)或其近旁之面之情形時，可在基材56之上面設置微透鏡陣列187。亦即，光電元件54可具有微透鏡陣列187。 In the above-mentioned embodiment, the case where a plurality of light beams from the pattern generator 184 pass through the microlens array 187 (condensing member) and then are irradiated to the photoelectric element 54 through the projection optical system 186 (first optical system) is described. Explanation, but the relationship between the first optical system and the light-concentrating member is not limited to this. Alternatively, for example, a plurality of light beams from the pattern generator 184 may enter the projection optical system 186, and the light beams passing through the projection optical system 186 may pass through the micro lens array and then be irradiated to the photoelectric element 54. In this case, two or more light beams from a plurality of positions (different positions in the XY plane) of the pattern generator 184 through the projection optical system 186 may be focused by one micro lens of the micro lens array on the photoelectric element 54. The light incident surface of the photovoltaic layer 60 or a surface adjacent thereto (for example, the first position described above). For example, the projection optical system 186 may be configured as a pattern generator (the reflecting surface of the DMD) 184 and the incident surface of the microlens array 187 to be conjugated, so that a plurality of light beams incident on the microlens array 187 are focused on the photoelectric layer 60. The light incident surface (for example, the lower surface of the base material 56 in FIG. 3) or a surface adjacent thereto. In this case, the light incident surface of the photoelectric layer 60 or a surface adjacent thereto can be regarded as the first surface of the microlens array (light condensing member) 187 for condensing a plurality of light beams. What is important is that the light irradiation device only needs to have a light condensing member arranged so that a plurality of light beams from a plurality of positions of the pattern generator can condense the light at a desired position (for example, the first position) of the photovoltaic element 54. In addition, when a plurality of light beams incident on the microlens array 187 are condensed on the light incident surface of the photoelectric layer 60 (for example, below the base material 56 in FIG. 3) or a nearby surface, the base material 56 may be used. A microlens array 187 is provided thereon. That is, the photovoltaic element 54 may have a microlens array 187.

又，與上述實施形態同樣的使用微透鏡陣列等之聚光構件之情形時，可將來自圖案產生器之複數位置之2以上之光束藉由微透鏡等之聚光元件， 聚光在光電元件之光電層之光射入面或其近旁之面上(例如前述第1位置)。在此場合，不一定需設置投影光學系統。此外，作為聚光元件，不限於折射型之微透鏡陣列，亦可使用具有複數個繞射部分以使射入光以聚光之方式繞射的繞射光學元件、或具有可分別使射入光聚光之複數個反射面的反射鏡陣列等。 When a light-concentrating member such as a microlens array is used in the same manner as the above-mentioned embodiment, a light beam from a plurality of positions of the pattern generator may be focused by a light-condensing element such as a microlens, and the light may be condensed on a photoelectric element The light-incident surface of the photovoltaic layer or a surface adjacent thereto (for example, the aforementioned first position). In this case, it is not necessary to provide a projection optical system. In addition, as the light condensing element, it is not limited to a refractive microlens array, and a diffractive optical element having a plurality of diffractive portions so that incident light is diffracted in a condensed manner, or having a diffractive light element An array of mirrors and the like for condensing a plurality of reflecting surfaces.

《第2實施形態》     "Second Embodiment"    

接著，根據圖19~圖33說明第2實施形態。圖19中概略顯示了第2實施形態之曝光裝置100之構成。此處，針對與前述第1實施形態之曝光裝置1000相同或同等之構成部分係賦予相同符號，並簡化或省略其說明。 Next, a second embodiment will be described with reference to FIGS. 19 to 33. FIG. 19 schematically shows the configuration of the exposure apparatus 100 according to the second embodiment. Here, the same reference numerals are given to the same or equivalent components as those of the exposure apparatus 1000 according to the first embodiment, and descriptions thereof are simplified or omitted.

曝光裝置100，於前述第1實施形態之曝光裝置1000中，在原本是區劃第1真空室34、由石英玻璃等之光穿透構件構成之真空間隔壁132相對外部封閉成氣密狀態之第1板36之貫通孔36a中，以大致無間隙之狀態從上方***後述光電膠囊(capsule)50之本體部52之點，以及形成第1真空室34之箱體19之第1部分19a之內部構成、以及光照射裝置之構成等，與前述第1實施形態之曝光裝置1000相異。以下，以相異點為中心進行說明。 In the exposure apparatus 100, in the exposure apparatus 1000 according to the first embodiment described above, the vacuum partition wall 132, which was originally defined as the first vacuum chamber 34, and made of a light-transmitting member such as quartz glass, is closed to the outside in an airtight state. In the through-hole 36a of the first plate 36, a point at which the body portion 52 of the capsule 50 described later is inserted from above, and the inside of the first portion 19a of the case 19 forming the first vacuum chamber 34 is inserted from above. The configuration and the configuration of the light irradiation device are different from those of the exposure device 1000 according to the first embodiment. The following description focuses on the differences.

圖20係以剖面顯示曝光裝置100所具備之電子束光學單元18A的立體圖。又，圖21係顯示電子束光學單元18A的縱剖面圖。如此等圖20、圖21所示，電子束光學單元18A具備：具有上側之第1部分19a與下側之第2部分19b的前述箱體19。 FIG. 20 is a perspective view showing an electron beam optical unit 18A included in the exposure apparatus 100 in a cross section. 21 is a longitudinal sectional view of the electron beam optical unit 18A. As shown in FIG. 20 and FIG. 21 as described above, the electron beam optical unit 18A includes the box 19 having the first portion 19a on the upper side and the second portion 19b on the lower side.

於箱體19之第1部分內部，區劃出第1真空室34，於第1真空室34內部，如圖19及圖29等所示，收納有藉由一對真空對應之致動器66被驅動於X軸、Y軸及Z軸方向之3方向的蓋收納板(plate)68。於蓋收納板68，如圖29所示，以和45個光電膠囊50之配置對應之配置，於上面形成有45個既定深度之圓孔68a，於各圓孔68a之內部底面形成有圓形的貫通孔68b。當然，圓孔68a之數量可與光電膠囊50之數量不同。此外，亦可不設置圓孔68a而以蓋收納板68支承後述 之蓋構件64。 Inside the first part of the casing 19, a first vacuum chamber 34 is defined. Inside the first vacuum chamber 34, as shown in Figs. 19 and 29, a pair of actuators 66 corresponding to a vacuum are housed. A lid storage plate 68 driven in three directions of the X-axis, Y-axis, and Z-axis directions. On the lid storage plate 68, as shown in FIG. 29, 45 circular holes 68a of a predetermined depth are formed on the cover storage plate 68, and a circular shape is formed on the inner bottom surface of each circular hole 68a. Through-hole 68b. Of course, the number of the circular holes 68 a may be different from the number of the photoelectric capsules 50. Alternatively, a cover member 64 which will be described later may be supported by the cover storage plate 68 without providing the circular hole 68a.

於蓋收納板68，進一步的，如省略蓋收納板68之一部分之俯視圖圖22所示，在圓孔68a與圓孔68a之間另形成有最終作為電子束之光路(亦可稱為電子束之通路)之圓形開口68c。又，若蓋收納板68可從電子束之通路退避的話，亦可不設置開口68c。 Further, as shown in FIG. 22 in which a plan view of a part of the lid storage plate 68 is omitted from the lid storage plate 68, an optical path (also referred to as an electron beam) which is finally used as an electron beam is formed between the round holes 68a and 68a. Opening) 68c. If the lid storage plate 68 can be retracted from the path of the electron beam, the opening 68c may not be provided.

回到電子束光學單元18A之說明，於底板38，如圖19等所示，形成有其中心位於45個光電膠囊50之本體部52各個之中心軸上的45個既定深度之凹部38a。此等凹部38a，如圖21所示，離底板38之上面有既定深度，於其內部底面形成有貫通孔(縮孔部)38b。 Returning to the description of the electron beam optical unit 18A, as shown in FIG. 19 and the like, the bottom plate 38 is formed with 45 recesses 38 a having a predetermined depth on the central axis of each of the body portions 52 of the 45 photoelectric capsules 50. As shown in FIG. 21, these recessed portions 38a have a predetermined depth from the upper surface of the bottom plate 38, and a through hole (reduction hole portion) 38b is formed on the inner bottom surface thereof.

於底板38之下面，以懸吊狀態固定有其光軸AXe位於45個光電膠囊50之本體部52各個之中心軸上的45個電子束光學系統70。 Below the bottom plate 38, 45 electron beam optical systems 70 whose optical axes AXe are located on the central axis of each of the body portions 52 of the 45 photoelectric capsules 50 are fixed in a suspended state.

光電膠囊50，如圖23(A)、圖29所示，具備：一端面(圖23(A)中之下端面)側形成有開口52c、於內部具有中空部52b之圓柱狀、另一端(圖23(A)中之上端)設有凸緣部52a的本體部52、與能封閉開口52c的蓋構件64。中空部52b，係一從本體部52之下端面以既定深度形成圓孔，並進而於該圓孔底面形成略圓錐狀凹部所得之形狀的中空部。包含凸緣部52a之本體部52上面，俯視為正方形，該正方形之中心與中空部52b之中心軸一致。在本體部52之上面，於其中心部設有光電元件54。 As shown in FIGS. 23 (A) and 29, the photoelectric capsule 50 is provided with an opening 52c formed on one end surface (lower end surface in FIG. 23 (A)), a cylindrical shape having a hollow portion 52b inside, and the other end ( The upper end in FIG. 23 (A) is provided with a body portion 52 of a flange portion 52a and a cover member 64 capable of closing the opening 52c. The hollow portion 52b is a hollow portion formed by forming a circular hole at a predetermined depth from the lower end surface of the main body portion 52, and further forming a slightly conical concave portion on the bottom surface of the circular hole. The upper surface of the main body portion 52 including the flange portion 52a is a square in plan view, and the center of the square coincides with the central axis of the hollow portion 52b. A photovoltaic element 54 is provided on the center portion of the main body portion 52.

於本體部52之俯視圓環狀之下端面，如圖23(A)等所示，形成有既定深度之俯視圓環狀之凹槽，於該凹槽內以其一部分被收納在凹槽內之狀態安裝有密封構件之一種的O形環62。 As shown in FIG. 23 (A) and the like, a ring-shaped lower groove of a predetermined depth is formed on the lower end surface of the ring portion of the body portion 52 in a plan view, and a part of the groove is received in the groove. In this state, an O-ring 62, which is one of the sealing members, is attached.

蓋構件64，係由與本體部52下端面之外周緣(輪廓)同樣之俯視圓形板構件構成，如後所述的係於真空中取下，但之前之狀態，則係安裝在本體部52，將本體部52之開口端封閉(參照圖29)。亦即，由於被蓋構件64封閉之 本體部52內部之閉空間(中空部52b)係成真空空間，因此蓋構件64係因作用於蓋構件64之大氣壓而被壓接於本體部52。 The cover member 64 is a circular plate member in plan view similar to the outer periphery (contour) of the lower end surface of the main body portion 52. The cover member 64 is removed in a vacuum as described later, but in the previous state, it is attached to the main body portion. 52. The open end of the main body portion 52 is closed (see FIG. 29). That is, since the closed space (hollow portion 52b) inside the body portion 52 closed by the cover member 64 is a vacuum space, the cover member 64 is crimped to the body portion 52 by the atmospheric pressure acting on the cover member 64.

又，從包含在光電膠囊製造商製造之光電膠囊之搬送中、到在曝光裝置製造商將蓋構件開放為止之一連串過程，待後詳述。 In addition, a series of processes from the transfer of the photovoltaic capsules manufactured by the photovoltaic capsule manufacturer to the opening of the lid member by the exposure device manufacturer will be described in detail later.

本第2實施形態之曝光裝置100，在光學單元18B內係取代前述45個光照射裝置180而設有45個光照射裝置80。45個光照射裝置80之各個，例如圖24所示，具有：照明系統82、產生經圖案化之光的圖案產生器(光學元件)84、以及投影光學系統86。圖案產生器84，亦可稱之為係將往既定方向行進之光之振幅、相位及偏光之至少1種之狀態空間性的調變後射出之空間光調變器。圖案產生器84，可產生例如由明暗圖案構成之光學圖案。 The exposure device 100 according to the second embodiment is provided with 45 light irradiation devices 80 instead of the 45 light irradiation devices 180 in the optical unit 18B. Each of the 45 light irradiation devices 80 has, for example, as shown in FIG. 24. : An illumination system 82, a pattern generator (optical element) 84 that generates patterned light, and a projection optical system 86. The pattern generator 84 can also be referred to as a spatial light modulator that emits after modulating at least one of the state, amplitude, phase, and polarization of light traveling in a predetermined direction. The pattern generator 84 can generate an optical pattern composed of, for example, a light and dark pattern.

圖25(A)及圖25(B)中，與對應之光電膠囊50之本體部52一起顯示了光照射裝置80之一構成例。其中，圖25(A)顯示從+X方向所見之構成，圖25(B)則顯示從-Y方向所見之構成。如圖25(A)及圖25(B)所示，照明系統82，具有產生照明光(雷射光)LB之光源部82a、以及使該照明光LB成為1或2以上之X軸方向長剖面矩形狀之光束的成形光學系統82b。 In FIG. 25 (A) and FIG. 25 (B), a configuration example of the light irradiation device 80 is shown together with the body portion 52 of the corresponding photoelectric capsule 50. Among them, Fig. 25 (A) shows the structure seen from the + X direction, and Fig. 25 (B) shows the structure seen from the -Y direction. As shown in FIGS. 25 (A) and 25 (B), the lighting system 82 includes a light source section 82a that generates illumination light (laser light) LB, and an X-axis long section that makes the illumination light LB 1 or 2 or more. A rectangular shaped beam optical system 82b.

光源部82a，包含連續振盪出作為光源之可見光或可見光附近之波長、例如波長365nm之雷射光的雷射二極體88、與配置在此雷射光之光路上的AO偏向器(亦稱為AOD或光偏向元件)90。AO偏向器90，此處其功能係作為切換元件，用於使雷射光間歇發光。 The light source unit 82a includes a laser diode 88 that continuously oscillates visible light as a light source or a wavelength near the visible light, such as laser light having a wavelength of 365 nm, and an AO deflector (also referred to as AOD) arranged on the optical path of the laser light. Or light deflection element) 90. The AO deflector 90 functions here as a switching element for intermittently emitting laser light.

成形光學系統82b，包含依序配置在來自光源部82a之雷射光束LB之光路上的繞射光學元件(亦稱DOE)92、與照度分布調整元件94及聚光透鏡96。 The molding optical system 82b includes a diffractive optical element (also referred to as DOE) 92, an illuminance distribution adjusting element 94, and a condenser lens 96, which are sequentially arranged on the optical path of the laser beam LB from the light source unit 82a.

繞射光學元件92，係當來自AO偏向器90之雷射光束射入時，即以該雷射光束在繞射光學元件92之射出面側之既定面，於Y軸方向以既定間隔排 列之於X軸方向長的複數個矩形狀(本實施形態中為細長狹縫狀)之區域具有大光強度分布之方式，轉換雷射光束之面內強度分布。於本實施形態，繞射光學元件92，藉由來自AO偏向器90之雷射光束之射入，生成於Y軸方向以既定間隔排列之於X軸方向長的複數個剖面矩形狀之射束(狹縫狀射束)。本實施形態中，係生成與圖案產生器84之構成相符數量之狹縫狀光束，詳情留待後敘。又，作為轉換雷射光束之面內強度分布之元件，不限於繞射光學元件，可以是折射光學元件或反射光學元件，亦可以是空間光調變器。 The diffractive optical element 92 is when a laser beam from the AO deflector 90 is incident, that is, the laser beam is arranged on a predetermined surface side of the diffractive optical element 92 on the exit surface side, and is arranged at a predetermined interval in the Y-axis direction. A plurality of rectangular (long and narrow slit-shaped) regions that are long in the X-axis direction have a large light intensity distribution method to convert the in-plane intensity distribution of the laser beam. In this embodiment, the diffractive optical element 92 generates a plurality of rectangular cross-section beams that are long in the X-axis direction and arranged at predetermined intervals in the Y-axis direction by the laser beam from the AO deflector 90. (Slit beam). In this embodiment, a slit-shaped light beam is generated in a number corresponding to the configuration of the pattern generator 84, and details will be described later. In addition, the element that converts the in-plane intensity distribution of the laser beam is not limited to a diffractive optical element, and may be a refractive optical element or a reflective optical element, or a spatial light modulator.

照度分布調整元件94，係一可在複數光束照射於圖案產生器84時，於將圖案產生器84之受光面分割為複數之各個分割區域，就各分割區域個別調整照度之物。於本實施形態，作為照度分布調整元件94，係使用將結晶、例如將複數個鉭酸鋰(lithium tantalate(簡稱：LT)單結晶)排列於與XY平面平行之面內，於其射入側與射出側配置偏光子所構成之元件，此結晶具有折射率可視施加電壓而變化之非線性光學效果。本實施形態中，如圖25(A)圓內之示意圖所示，舉一例而言，係使用以1mm之節距於XY平面內例如將24個鉭酸鋰之結晶94a配置成2行12列之矩陣狀的照度分布調整元件94。符號94b係表示電極。根據此構成之照度分布調整元件94，由於射出側之偏光子僅使既定偏光成分通過，因此藉由使透過射入側之偏光子射入結晶之光之偏光狀態變化，例如從直線偏光變化為圓偏光，即能使從射出側之偏光子射出之光之強度變化。於此場合，偏向狀態之變化，可藉由控制對結晶之施加電壓使之可變。因此，藉由控制對各個結晶之施加電壓，即能調整對應各個結晶之各區域(圖27之以二點鏈線圍繞之區域)之照度之調整(參照圖25(A))。照度分布調整元件94，不限於使用鉭酸鋰，亦可使用鈮酸鋰(lithium niobate(簡稱：LN)單結晶)等其他光強度調變結晶(電氣光學元件)來構成。又，在使用圖案產生器84、或配置在圖案產生器84與光電元件54之間之光學構件，而能調整照射於光電元件54 之至少1個光束之強度之情形時，可不設置照度分布調整元件94。又，作為照度分布調整元件94，亦可使用空間性調變射出之光之振幅、相位及偏光狀態之空間光調變器，例如穿透型液晶元件或反射型液晶元件等。 The illuminance distribution adjusting element 94 is an object that can adjust the illuminance individually for each divided area when a plurality of light beams are irradiated to the pattern generator 84, and the light receiving surface of the pattern generator 84 is divided into a plurality of divided areas. In this embodiment, as the illuminance distribution adjusting element 94, crystals, for example, a plurality of lithium tantalate (LT) single crystals are arranged in a plane parallel to the XY plane, and on the incident side thereof This crystal has a non-linear optical effect in which the refractive index changes depending on the applied voltage. In this embodiment, as shown in the schematic diagram in the circle of FIG. 25 (A), for example, 24 lithium lithium tantalate crystals 94a are arranged in 2 rows and 12 columns in the XY plane with a pitch of 1 mm. The matrix-like illuminance distribution adjusting element 94. Reference numeral 94b denotes an electrode. According to the illuminance distribution adjusting element 94 configured in this way, since the polarizer on the exit side passes only a predetermined polarization component, the polarization state of the light entering the crystal is changed by the polarizer on the entrance side, for example, from linear polarization to Circularly polarized light can change the intensity of the light emitted from the polarized photons on the emission side. In this case, the change in the bias state can be made variable by controlling the voltage applied to the crystal. Therefore, by controlling the voltage applied to each crystal, it is possible to adjust the illumination of each region corresponding to each crystal (the region surrounded by the two-point chain line in FIG. 27) (see FIG. 25 (A)). The illuminance distribution adjusting element 94 is not limited to using lithium tantalate, and may be configured using other light intensity modulation crystals (electrical optical elements) such as lithium niobate (abbreviation: LN) single crystal. In addition, when the pattern generator 84 or an optical member disposed between the pattern generator 84 and the photoelectric element 54 can be used to adjust the intensity of at least one light beam irradiated to the photoelectric element 54, the illumination distribution adjustment may not be set. Element 94. Also, as the illuminance distribution adjusting element 94, a spatial light modulator that spatially adjusts the amplitude, phase, and polarization state of the emitted light can be used, such as a transmissive liquid crystal element or a reflective liquid crystal element.

於本第2實施形態，如後所述，由於係使用反射型之空間光調變器作為圖案產生器84，因此在聚光透鏡96下方之光射出側配置有光路彎折用之反射鏡98。聚光透鏡96將以繞射光學元件92生成之複數個剖面矩形狀(狹縫狀)之光束於Y軸方向加以聚光，照射於反射鏡98。作為聚光透鏡96，亦可使用例如於X軸方向長的圓柱狀透鏡等。又，聚光透鏡96可以是由複數個透鏡構成。亦可取代聚光透鏡，使用聚光反射鏡等之反射光學構件或繞射光學元件。此外，反射鏡98不限於平面鏡，可以是具有曲率之形狀。反射鏡98具有曲率之情形時(具有有限之焦距)，亦可兼用作為聚光透鏡96之功能。 In this second embodiment, as described later, since a reflective spatial light modulator is used as the pattern generator 84, a light reflecting mirror 98 for light path bending is arranged on the light exit side under the condenser lens 96. . The condenser lens 96 focuses a plurality of rectangular (slit-shaped) light beams generated by the diffractive optical element 92 in the Y-axis direction and irradiates the reflector 98. As the condenser lens 96, for example, a cylindrical lens that is long in the X-axis direction can be used. The condenser lens 96 may be composed of a plurality of lenses. Instead of a condenser lens, a reflective optical member such as a condenser mirror or a diffractive optical element may be used. In addition, the reflecting mirror 98 is not limited to a flat mirror, and may have a shape having a curvature. When the reflecting mirror 98 has a curvature (having a limited focal length), it can also function as a condenser lens 96.

反射鏡98係相對XY平面以既定角度配置，將照射而來之複數個狹縫狀光束反射向圖25(A)中之左斜上方。 The reflecting mirror 98 is arranged at a predetermined angle with respect to the XY plane, and reflects a plurality of slit-shaped light beams irradiated toward the upper left diagonally in FIG. 25 (A).

圖案產生器84，被配置在經反射鏡98反射之複數個狹縫狀光束之反射光路上。詳言之，圖案產生器84係於Z軸方向配置在電路基板102之-Z側之面，此電路基板102配置在聚光透鏡96與反射鏡98之間。此處，於電路基板102，如圖25(A)所示，形成有作為從聚光透鏡96朝向反射鏡98之複數個狹縫狀光束之光路的開口102a。 The pattern generator 84 is arranged on the reflected light path of a plurality of slit-shaped light beams reflected by the reflecting mirror 98. Specifically, the pattern generator 84 is a surface arranged on the -Z side of the circuit substrate 102 in the Z-axis direction, and the circuit substrate 102 is arranged between the condenser lens 96 and the reflector 98. Here, as shown in FIG. 25 (A), on the circuit substrate 102, an opening 102a is formed as an optical path of a plurality of slit-shaped light beams from the condenser lens 96 to the reflector 98.

又，由圖25(A)清楚可知，本實施形態中，照明系統82所具有之光學系統之光軸AXi與投影光學系統86之光軸(與最終光學元件透鏡86b之光軸一致)AXo，雖皆與Z軸平行，但於Y軸方向錯開既定距離(偏位(offset))。本實施形態中，照明系統82係將於X軸方向長之剖面矩形狀之光(光束)照射於圖案產生器，因此可縮小Y軸方向之offset量。據此，可使射入圖案產生器之光之射入角接近垂直，即使不加大投影光學系統86之射入側孔徑數亦能使來自圖 案產生器之光束以良好效率射入投影光學系統86。因此，在使用複數個電子束光學系統之情形時，亦能以良好效率配置照明系統及投影光學系統。此外，照明系統82所具有之光學系統之光軸AXi與投影光學系統之光軸AXo可以是非平行。 As is clear from FIG. 25 (A), in this embodiment, the optical axis AXi of the optical system of the illumination system 82 and the optical axis of the projection optical system 86 (the same as the optical axis of the final optical element lens 86b) AXo, Although they are all parallel to the Z axis, they are staggered by a predetermined distance (offset) in the Y axis direction. In this embodiment, the illumination system 82 irradiates the pattern generator with light (beam) with a rectangular cross section that is long in the X-axis direction, so that the offset amount in the Y-axis direction can be reduced. According to this, the incident angle of the light entering the pattern generator can be made close to vertical, and even if the number of the aperture side of the projection optical system 86 is not increased, the light beam from the pattern generator can enter the projection optical system with good efficiency. 86. Therefore, when a plurality of electron beam optical systems are used, the illumination system and the projection optical system can be configured with good efficiency. In addition, the optical axis AXi of the optical system included in the illumination system 82 and the optical axis AXo of the projection optical system may be non-parallel.

本第2實施形態中，圖案產生器84係以可程式化之空間光調變器之一種的光繞射型光閥(GLV(註冊商標))構成。光繞射型光閥GLV，如圖26(A)及圖26(B)所示，係在矽基板(chip)84a上以數千個之規模形成被稱為「扁帶」(ribbon)之矽氮化膜之微細構造體(以下，稱為扁帶)84b的空間光調變器。 In the second embodiment, the pattern generator 84 is constituted by a light-diffraction type light valve (GLV (registered trademark)), which is a type of programmable spatial light modulator. As shown in FIGS. 26 (A) and 26 (B), the light-diffraction light valve GLV is formed on a silicon substrate 84a at a scale of thousands, called a "ribbon". Spatial light modulator for a fine structure (hereinafter referred to as a flat belt) of a silicon nitride film 84b.

GLV之驅動原理如下。 The driving principle of GLV is as follows.

藉由以電性方式控制扁帶84b之撓曲，GLV即能發揮作為可程式化繞射格子之功能，以高解析度、高速(應答性250Hz~1MHz)、高正確性，進行調光、調變、雷射光之切換。GLV被分類為微電子機械系統(MEMS)。扁帶84b係由在硬度、耐久性、化學安定性上具有強固特性之高溫陶瓷之一種的非晶質矽窒化膜(Si3N4)作成。各扁帶之寬度為2~4μm，長度為100~300μm。扁帶84b被鋁薄膜覆蓋，兼具有反射板與電極兩方之功能。扁帶係跨於共通電極84c設置，當來自驅動器(圖26(A)及圖26(B)中未圖示)之控制電壓被供應至扁帶84b時，因靜電而向基板84a方向撓曲。當控制電壓消失時，扁帶84b即因矽氮化膜固有之高張力恢復原來狀態。亦即，扁帶84b是可動反射元件之一種。 By controlling the deflection of the flat belt 84b electrically, the GLV can function as a programmable diffraction grid, with high resolution, high speed (response 250Hz ~ 1MHz), high accuracy, dimming, Modulation, laser light switching. GLV is classified as a microelectromechanical system (MEMS). The flat belt 84b is made of an amorphous silicon suffocated film (Si 3 N 4 ), which is one of high-temperature ceramics having strong characteristics in hardness, durability, and chemical stability. Each flat belt has a width of 2 to 4 μm and a length of 100 to 300 μm. The flat belt 84b is covered with an aluminum thin film, and functions as both a reflecting plate and an electrode. The flat belt is provided across the common electrode 84c. When a control voltage from a driver (not shown in FIG. 26 (A) and FIG. 26 (B)) is supplied to the flat belt 84b, it is deflected toward the substrate 84a due to static electricity. . When the control voltage disappears, the flat belt 84b returns to its original state due to the high tension inherent in the silicon nitride film. That is, the flat belt 84b is one of the movable reflecting elements.

於GLV，有藉由電壓施加而位置變化之主動(active)扁帶與處於接地而位置不變之偏壓(bias)扁帶交互排列之型式、與全部皆為主動扁帶之型式，本第2實施形態係使用後者。 In the GLV, there are a type in which an active flat belt whose position is changed by voltage application and a bias flat belt which is in the ground but not in a fixed position are alternately arranged, and all of which are active flat belts. The second embodiment uses the latter.

本實施形態中，在扁帶84b位於-Z側、矽基板84a位於+Z側之狀態下，於圖25(A)等所示之電路基板102之-Z側之面安裝有由GLV構成之圖 案產生器84。於電路基板102，設有用以對扁帶84b供應控制電壓之CMOS驅動器(未圖示)。以下之說明中，為方便起見，包含CMOS驅動器稱為圖案產生器84。 In this embodiment, in a state where the flat belt 84b is located on the -Z side and the silicon substrate 84a is located on the + Z side, a surface made of GLV is mounted on the surface of the -Z side of the circuit board 102 shown in Fig. 25 (A) and the like. Pattern generator 84. The circuit substrate 102 is provided with a CMOS driver (not shown) for supplying a control voltage to the ribbon 84b. In the following description, a CMOS driver is referred to as a pattern generator 84 for convenience.

本第2實施形態所使用之圖案產生器84，如圖27所示，係將扁帶84b，例如具有6000個之扁帶列85以其長邊方向(扁帶84b之排列方向)為X軸方向，於Y軸方向以既定間隔在矽基板上例如形成12列。各扁帶列85之扁帶84b，設在共通電極之上。於本實施形態，藉由固定位準之電壓施加與施加之解除，主要為進行雷射光之切換(on/off)而驅動各扁帶84b。不過，由於GLV可視施加電壓進行繞射光強度之調節，因此如後述般在來自圖案產生器84之複數條光束之至少一部分之強度需要調整之情形時等，進行施加電壓之微調整。例如，在各扁帶射入相同強度之光之情形時，可從圖案產生器84產生具有不同強度之複數條光束。 As shown in FIG. 27, the pattern generator 84 used in the second embodiment is a flat belt 84b, for example, a flat belt row 85 having 6000 pieces, with the long side direction (the arrangement direction of the flat belt 84b) being the X axis. Direction, for example, 12 rows are formed on the silicon substrate at a predetermined interval in the Y-axis direction. The flat belts 84b of each flat belt array 85 are provided on the common electrode. In this embodiment, each of the flat belts 84b is driven by switching on / off the laser light by applying and releasing the voltage at a fixed level. However, since the GLV can adjust the intensity of the diffracted light depending on the applied voltage, as described later, when the intensity of at least a part of the plurality of light beams from the pattern generator 84 needs to be adjusted, the applied voltage is finely adjusted. For example, in the case where the flat ribbons emit light of the same intensity, a plurality of light beams having different intensities may be generated from the pattern generator 84.

於本實施形態，以繞射光學元件92生成12條狹縫狀之光束，此12條光束透過照度分布調整元件94、聚光透鏡96及反射鏡98，在各扁帶列85中央照射出於X軸方向長之狹縫狀光束LB。本第2實施形態中，光束LB對各扁帶84b之照射區域，為正方形區域。又，光束LB對各扁帶84b之照射區域亦可以不是正方形區域。可以是於X軸方向長或於Y軸方向長之矩形區域。本第2實施形態中，12條光束在圖案產生器84之受光面上之照射區域(照明系統82之照射區域)，亦可以說是在X軸方向之長度為Smm、Y軸方向之長度為Tmm之矩形區域(參照圖7、圖27)。 In this embodiment, twelve slit-shaped light beams are generated by the diffractive optical element 92. The twelve light beams pass through the illuminance distribution adjusting element 94, the condenser lens 96, and the reflection mirror 98, and are irradiated at the center of each flat band row 85. A long slit-shaped light beam LB in the X-axis direction. In the second embodiment, the irradiation region of the light beam LB to each flat belt 84b is a square region. The irradiation area of the light beam LB to each of the flat ribbons 84b may not be a square area. It can be a rectangular region that is longer in the X-axis direction or longer in the Y-axis direction. In the second embodiment, the irradiation area of the 12 light beams on the light receiving surface of the pattern generator 84 (the irradiation area of the illumination system 82) can also be said to be Smm in the X-axis direction, and S-length in the Y-axis direction. Tmm rectangular area (see Fig. 7 and Fig. 27).

由於各扁帶84b可獨立控制，因此以圖案產生器84產生之剖面正方形光束之數量為6000×12=72000條，可進行72000條光束之切換(on/off)。於本實施形態，在光電膠囊50之光電元件54之遮光膜58形成有72000個之孔徑58a，以使圖案產生器84產生之72000條之射束能個別照射。又，孔徑58a之數量可不與例如圖案產生器84可照射之射束之數量相同，只要是照射在包含72000條 射束(雷射射束)之各個所對應之孔徑58a之光電元件54(遮光膜58)上之區域即可。亦即，只要光電元件54上之複數個孔徑58a各個之尺寸較對應之射束之剖面尺寸小即可。又，圖案產生器84所具有之可動反射元件(扁帶84b)之數量與以圖案產生器84產生之光束之數量可以不同。亦可以是來自複數(例如數個)可動元件(扁帶84b)之光照射於1個孔徑58a。例如，亦可使用藉由電壓施加而位置變化之主動扁帶與落於接地而位置不變之偏壓扁帶交互排列形式之GLV作為圖案產生器，以複數(2個)可動元件(扁帶)來進行1條光束之切換。此形式之GLV，在電壓未施加於主動扁帶時，兩扁帶位於同一平面，在此狀態下GLV具有反射鏡之功能，射入GLV之光被正反射。當主動扁帶被施加電壓時即較偏壓扁帶撓曲向基板側，而形成矩形繞射格子。此狀態下，射入光被以一定角度繞射。正反射光及繞射光之光量可藉由控制對主動扁帶之電壓來使其連續變化。藉由使主動扁帶相對偏壓扁帶變位至1/4波長之位置，即能完全消除正反射光。因此，此GLV，藉由變更相鄰之複數個可動反射元件之主動扁帶與偏壓扁帶的相對位置，換言之藉由變更來自2以上之可動反射元件中之1個(主動扁帶)之光、與來自2以上之可動反射元件中之另1個(偏壓扁帶)之光間的相位差，即能使之產生照射於光電元件之複數條光束中至少1個之1以上的繞射光束。此外，圖案產生器84之數量與光電膠囊50之數量可以不是相等的。 Since each flat belt 84b can be controlled independently, the number of cross-section square beams generated by the pattern generator 84 is 6000 × 12 = 72000, and 72,000 beams can be switched on / off. In this embodiment, 72,000 apertures 58a are formed in the light shielding film 58 of the photoelectric element 54 of the photoelectric capsule 50 so that the 72,000 beams generated by the pattern generator 84 can be individually irradiated. In addition, the number of apertures 58a may not be the same as, for example, the number of beams that the pattern generator 84 can irradiate, as long as they are irradiated to the photoelectric elements 54 (light-shielding) of the apertures 58a corresponding to each of the 72,000 beams (laser beams). The area on the film 58) is sufficient. That is, as long as the size of each of the plurality of apertures 58a on the photovoltaic element 54 is smaller than the cross-sectional size of the corresponding beam. The number of movable reflective elements (ribbons 84b) in the pattern generator 84 and the number of light beams generated by the pattern generator 84 may be different. Alternatively, light from a plurality (for example, a plurality of) movable elements (strips 84b) may be irradiated to one aperture 58a. For example, it is also possible to use a GLV in the form of an alternate arrangement of an active webbing whose position changes by voltage application and a biased webbing which is grounded but does not change its position as a pattern generator, with a plurality (2) of movable elements (belt webbing) ) To switch one beam. In this form of GLV, when the voltage is not applied to the active flat belt, the two flat belts are located on the same plane. In this state, the GLV has the function of a mirror, and the light entering the GLV is reflected normally. When the active flat belt is applied with a voltage, it is flexed toward the substrate side than the biased flat belt to form a rectangular diffraction grid. In this state, the incident light is diffracted at a certain angle. The amount of regular reflected light and diffracted light can be continuously changed by controlling the voltage to the active flat belt. By displacing the active flat belt with a biased flat belt to a position of 1/4 wavelength, the specular reflection light can be completely eliminated. Therefore, in this GLV, the relative positions of the active flat belt and the bias flat belt of a plurality of adjacent movable reflective elements are changed, in other words, by changing one of the active reflective belts (active flat belts) from two or more The phase difference between the light and the light from the other one (biased flat ribbon) of the movable reflection element of two or more can cause it to generate at least one or more of the plurality of light beams irradiating the photoelectric element.射 光束。 Beam. In addition, the number of the pattern generators 84 and the number of the photocapsules 50 may not be equal.

又，亦可在配置反射鏡98之位置配置圖案產生器84，在配置圖案產生器84之位置配置反射鏡98。或者，亦可在基板102之上面配置圖案產生器84，將因照明光之照射而從圖案產生器產生之複數條光束以配置在基板102之+Z側之反射鏡98加以反射，透過基板102之開口102a導向投影光學系統86。 The pattern generator 84 may be disposed at a position where the reflector 98 is disposed, and the mirror 98 may be disposed at a position where the pattern generator 84 is disposed. Alternatively, a pattern generator 84 may be disposed on the substrate 102, and a plurality of light beams generated from the pattern generator due to illumination light irradiation may be reflected by a reflecting mirror 98 disposed on the + Z side of the substrate 102 and transmitted through the substrate 102. The opening 102a guides the projection optical system 86.

投影光學系統86，如圖25(A)及圖25(B)所示，具有包含依序配置在來自圖案產生器84之光束之光路上之透鏡86a、86b的物鏡。在透鏡86a與透鏡86b之間，配置有例如具有圓形狀開口、使來自圖案產生器84之複數條光 束中on之光束通過且將off之光束加以遮蔽之空間濾鏡86c。投影光學系統86之投影倍率例如約為1/4。以下，孔徑58a雖係設定為於X軸方向長之矩形，但可以是正方形，亦可以是多角形、橢圓等其他形狀。此處，各透鏡86a、86b之各個可以是由複數個透鏡構成。又，投影光學系統不限定於是折射型光學系統，亦可以是反射型光學系統或折反射型光學系統。 As shown in FIG. 25 (A) and FIG. 25 (B), the projection optical system 86 has an objective lens including lenses 86a and 86b sequentially arranged on the light path of the light beam from the pattern generator 84. Between the lens 86a and the lens 86b, for example, a space filter 86c having a circular opening and passing a beam of on from a plurality of beams from the pattern generator 84 and shielding the beam of off is arranged. The projection magnification of the projection optical system 86 is, for example, about 1/4. Hereinafter, although the aperture 58a is set as a rectangle long in the X-axis direction, it may be a square, or other shapes such as a polygon and an ellipse. Here, each of the lenses 86a and 86b may be composed of a plurality of lenses. The projection optical system is not limited to a refractive optical system, and may be a reflective optical system or a refracting optical system.

本第2實施形態中，投影光學系統86藉由將來自圖案產生器84之光投射於光電元件54，使通過複數個、此處係通過72000個孔徑58a之至少1個之光束照射於光電層60。亦即，來自圖案產生器84之on的光束透過對應之孔徑58a照射於光電層60，off的光束則不照射於對應之孔徑58a及光電層60。又，來自圖案產生器之光束之像，例如成像在光電層60上(基材56之下面、或其近旁之面)之情形時，亦可將投影光學系統86稱為成像光學系統。 In the second embodiment, the projection optical system 86 projects the light from the pattern generator 84 onto the photoelectric element 54 so that at least one light beam passing through a plurality of beams, here through 72000 apertures 58a, is irradiated on the photoelectric layer. 60. That is, the light beam from on of the pattern generator 84 is irradiated to the photoelectric layer 60 through the corresponding aperture 58a, and the light beam from off is not irradiated to the corresponding aperture 58a and the photoelectric layer 60. In addition, when the image of the light beam from the pattern generator is formed on the photoelectric layer 60 (below the substrate 56 or the surface near the substrate 56), the projection optical system 86 may be referred to as an imaging optical system.

如圖24所示，於投影光學系統86，與前述第1實施形態同樣的，設有可調整投影光學系統86之光學特性的光學特性調整裝置87。又，圖24中，雖顯示成好像僅於圖中之1個光照射裝置80設有光學特性調整裝置87，但實際上，於所有45個光照射裝置80之全部皆設有光學特性調整裝置87。45個光學特性調整裝置87根據來自主控制裝置110之指示，由控制部11加以控制。 As shown in FIG. 24, the projection optical system 86 is provided with an optical characteristic adjustment device 87 capable of adjusting the optical characteristics of the projection optical system 86, as in the first embodiment. In addition, although it is shown in FIG. 24 that the optical characteristic adjustment device 87 is provided only in one light irradiation device 80 in the figure, in fact, all 45 light irradiation devices 80 are provided with optical characteristic adjustment devices. 87. Forty-five optical characteristic adjustment devices 87 are controlled by the control unit 11 in accordance with an instruction from the main control device 110.

於圖28(A)及圖28(B)中，一起顯示了本第2實施形態之曝光裝置100所使用之電子束光學系統70之一構成例，與對應之光電膠囊50之本體部52。其中，圖28(A)顯示從+X方向所見之構成、圖28(B)顯示從-Y方向所見之構成。比較圖28(A)及圖28(B)與圖2(A)及圖2(B)可知，電子束光學系統70與第1實施形態之電子束光學系統為相同構成。如以上所述，於本第2實施形態之曝光裝置100，電子束光學單元18A包含底板38，其下方之構成包含第2真空室72內部之電子束光學系統70，與前述第1實施形態之曝光裝置1000相同。 FIGS. 28 (A) and 28 (B) show a configuration example of the electron beam optical system 70 used in the exposure apparatus 100 according to the second embodiment, and the corresponding body portion 52 of the photoelectric capsule 50. Among them, FIG. 28 (A) shows a structure seen from the + X direction, and FIG. 28 (B) shows a structure seen from the -Y direction. Comparing FIGS. 28 (A) and 28 (B) with FIGS. 2 (A) and 2 (B), it can be seen that the electron beam optical system 70 has the same configuration as the electron beam optical system of the first embodiment. As described above, in the exposure apparatus 100 according to the second embodiment, the electron beam optical unit 18A includes a bottom plate 38, and the structure below it includes the electron beam optical system 70 inside the second vacuum chamber 72, as in the first embodiment. The exposure device 1000 is the same.

不過，於本第2實施形態，在第1真空室34之內部，具體而言，在底板38與光電元件54之間，取代引出電極112a而配置有引出電極112。又，於圖28(A)及圖28(B)中，雖省略圖示，但引出電極112可設在例如蓋收納板68之圓形開口68c周圍。當然，亦可將引出電極112設置在與蓋收納板68不同之其他構件。 However, in the second embodiment, the lead-out electrode 112 is arranged inside the first vacuum chamber 34, specifically, between the base plate 38 and the photovoltaic element 54, instead of the lead-out electrode 112a. In addition, in FIGS. 28 (A) and 28 (B), although the illustration is omitted, the lead-out electrode 112 may be provided around, for example, the circular opening 68c of the lid storage plate 68. Of course, the lead-out electrode 112 may be provided on another member different from the lid storage plate 68.

於本第2實施形態之曝光裝置100，其他部分之構成與第1實施形態之曝光裝置1000相同。 In the exposure apparatus 100 according to the second embodiment, the configuration of other parts is the same as that of the exposure apparatus 1000 according to the first embodiment.

接著，將曝光裝置100之組裝流程之一例，以在光電膠囊製造商製造之光電膠囊之搬送、及到在曝光裝置製造商開放蓋構件為止之一連串之流程為中心進行說明。 Next, an example of the assembling process of the exposure apparatus 100 will be described focusing on a series of processes from the transfer of the photovoltaic capsule manufactured by the photovoltaic capsule manufacturer to the opening of the lid member by the exposure equipment manufacturer.

首先，在光電膠囊製造商之工廠之真空室120內，如圖23(A)中向上之塗白箭頭所示，將蓋構件64移動至上方，以封閉開口52c之方式，使蓋構件64接觸光電膠囊50之本體部52。接著，如圖23(B)所示，在真空室120內使用彈簧或其他賦力構件122，對蓋構件64施加(施壓)向上之力。此時，因施壓之作用，設在本體部52下端面之O形環62被完全壓潰。然後，在對蓋構件64施壓之狀態下，將真空室120內開放於大氣時，由於光電膠囊50內部為真空，因大氣壓使得蓋構件64被壓接於本體部52，而解除賦力構件122之施壓。圖23(C)中，顯示了此施壓被解除之狀態。於此圖23(C)之狀態下，本體部52與蓋構件64成為一體而構成光電膠囊50(於大氣壓下光電膠囊50被密封)。以上述方式，複數個(至少45個)光電膠囊50，在維持圖23(C)之狀態下，被輸送至曝光裝置製造商之工廠。又，亦可在蓋構件64之與本體部52對向之面形成環狀凹槽，以於該凹槽埋入O形環62之一部分之狀態安裝。此外，在使蓋構件64接觸本體部52之狀態下，於大氣空間亦能維持光電膠囊內部空間之真空狀態的話，亦可不設置O形環62等之密封構件。 First, in the vacuum chamber 120 of the photovoltaic capsule manufacturer's factory, as shown by a white arrow pointing upward in FIG. 23 (A), the cover member 64 is moved upward to close the opening 52c so that the cover member 64 contacts The body portion 52 of the photoelectric capsule 50. Next, as shown in FIG. 23 (B), a spring or other biasing member 122 is used in the vacuum chamber 120 to apply (press) an upward force to the cover member 64. At this time, the O-ring 62 provided on the lower end face of the main body portion 52 is completely crushed due to the pressure. Then, when the inside of the vacuum chamber 120 is opened to the atmosphere in a state in which the cover member 64 is under pressure, the inside of the photocapsule 50 is vacuumed, and the cover member 64 is crimped to the main body portion 52 due to atmospheric pressure, and the energizing member is released. The pressure of 122. FIG. 23 (C) shows a state where this pressure is released. In the state of FIG. 23 (C), the main body portion 52 and the cover member 64 are integrated to constitute the photovoltaic capsule 50 (the photovoltaic capsule 50 is sealed under atmospheric pressure). In the manner described above, the plurality (at least 45) of the photocapsules 50 are transported to the factory of the exposure device manufacturer while maintaining the state of FIG. 23 (C). Further, an annular groove may be formed on a surface of the cover member 64 facing the main body portion 52, and the groove may be embedded in a part of the O-ring 62. In addition, when the cover member 64 is brought into contact with the main body portion 52 and the vacuum state of the internal space of the photoelectric capsule can be maintained in the atmospheric space, a sealing member such as an O-ring 62 may not be provided.

曝光裝置製造商之工廠內，45個光電膠囊50被搬送至無塵室內，如圖29中之向下箭頭所示，從上方***已組裝在框架16之電子束光學單元18A之第1板36所形成之45個貫通孔36a之各個中，安裝於第1板36。此安組狀態下，於45個貫通孔36a中，光電膠囊50之本體部52以幾乎無間隙之狀態***。又，此時，於蓋收納板68，45個既定深度之圓孔68a係分別位在45個光電膠囊50之下方，位於蓋構件64與蓋收納板68之上面之間存在既定間隙的高度位置。 In the factory of the exposure device manufacturer, 45 photoelectric capsules 50 are transported to the clean room, as shown by the downward arrow in FIG. 29, and the first plate 36 of the electron beam optical unit 18A assembled in the frame 16 is inserted from above. Each of the 45 through holes 36 a formed is attached to the first plate 36. In this set state, the body portion 52 of the photoelectric capsule 50 is inserted into the 45 through-holes 36a with almost no gap. At this time, in the cover storage plate 68, 45 circular holes 68a of a predetermined depth are located below the 45 photoelectric capsules 50, respectively, at a height position where a predetermined gap exists between the cover member 64 and the upper surface of the cover storage plate 68. .

又，在電子束光學單元18A對框架16之組裝前，已先進行載台系統14之組裝、組裝妥之載台系統14往載台室10內之搬入、以及與載台系統14相關之必要的調整等。 In addition, before the assembly of the frame 16 by the electron beam optical unit 18A, the stage system 14 has been assembled, the assembled stage system 14 has been moved into the stage chamber 10, and the stage system 14 is necessary. Adjustments, etc.

光電膠囊50對第1板36之組裝後，藉由真空對應致動器66，如圖30所示，將蓋收納板68往上方驅動，直到蓋構件64之一部分進入蓋收納板68之45個既定深度之圓孔68a內部之位置為止。 After assembling the photoelectric capsule 50 to the first plate 36, the vacuum corresponding actuator 66 is used to drive the lid storage plate 68 upward as shown in FIG. 30 until a portion of the lid member 64 enters the 45 of the lid storage plate 68. Up to the position inside the circular hole 68a of a predetermined depth.

其次，同時進行將箱體19之第1部分19a內部與第2部分19b內部抽成真空(參照圖20)。又，與此並行的將載台室10內部之抽成真空。 Next, the inside of the first portion 19a and the inside of the second portion 19b of the case 19 are simultaneously evacuated (see FIG. 20). In addition, the inside of the stage chamber 10 is evacuated in parallel with this.

此時，箱體19之第1部分19a內部之抽成真空，係進行到與光電膠囊50內部相同之位準之高真空狀態為止，第1部分19a之內部成為第1真空室34(參照圖31)。此時，由於光電膠囊50內部之氣壓與外部(第1部分19a之內部)之氣壓相當，因此如圖31所示，蓋構件64藉由自重而從本體部52分離，完全被收納在圓孔68a之內部。又，在箱體19之第1部分19a內部之抽真空完成之狀態下，複數個光電膠囊50分別具有之光電元件54，即發揮作為分隔第1真空室34與其外側(箱體19之外部)空間之間隔壁(真空間隔壁)的功能。第1真空室34之外側為大氣壓、或較大氣壓為略正壓。 At this time, the vacuum inside the first portion 19a of the cabinet 19 is advanced to a high vacuum state at the same level as the inside of the photoelectric capsule 50, and the inside of the first portion 19a becomes the first vacuum chamber 34 (see FIG. 31). At this time, since the air pressure inside the photoelectric capsule 50 is equal to the air pressure inside (the inside of the first part 19a), as shown in FIG. 31, the cover member 64 is separated from the main body portion 52 by its own weight, and is completely accommodated in the round hole. 68a inside. In addition, in the state where the inside of the first portion 19a of the casing 19 is completed, the photoelectric elements 54 respectively provided in the plurality of photoelectric capsules 50 function as a partition between the first vacuum chamber 34 and the outside thereof (outside of the casing 19). The function of the partition wall (vacuum partition wall) of space. The outside of the first vacuum chamber 34 is at atmospheric pressure, or the atmospheric pressure is slightly positive.

另一方面，雖可將箱體19之第2部分19b之內部抽成真空至與第1部分19a相同位準之高真空狀態，但亦可抽成真空至真空度較第1部分19a低(壓 力高)之位準的中真空狀態。本第2實施形態中，由於第1部分19a內部與第2部分19b內部係藉由縮孔部38b而實質被隔離，因此這種狀態是可能的。第2部分19b內部之抽真空完成後，第2部分19a之內部成為第2真空室72。將第2部分19b之內部抽至中真空狀態之情形時，可縮短抽成真空所需之時間。載台室10之內部，係進行與第2部分19b之內部相位準之抽真空。 On the other hand, although the inside of the second part 19b of the cabinet 19 can be evacuated to a high vacuum state at the same level as the first part 19a, it can also be evacuated to a degree of vacuum lower than that of the first part 19a ( High pressure). In the second embodiment, the inside of the first portion 19a and the inside of the second portion 19b are substantially isolated by the shrinkage portion 38b, so this state is possible. After the evacuation inside the second portion 19b is completed, the inside of the second portion 19a becomes the second vacuum chamber 72. When the inside of the second part 19b is evacuated to a medium vacuum state, the time required to evacuate can be shortened. The inside of the stage chamber 10 is evacuated in the same phase as the inside of the second part 19b.

第1部分19a之抽真空完成後，藉由真空對應致動器66將蓋收納板68移動於X軸方向及Y軸方向(以及Z軸方向)，將形成在蓋收納板68之45個圓形開口68c分別定位於45個電子束光學系統70之光軸AXe上。圖21中顯示了以此方式將圓形開口68c定位於光軸AXe上之狀態。之後，進行必要之調整，結束電子束光學單元18A之組裝。 After the vacuuming of the first part 19a is completed, the lid storage plate 68 is moved in the X-axis direction and the Y-axis direction (and the Z-axis direction) by the vacuum corresponding actuator 66, and 45 circles formed on the lid storage plate 68 will be formed. The shaped openings 68 c are respectively positioned on the optical axes AXe of the 45 electron beam optical systems 70. FIG. 21 shows a state where the circular opening 68c is positioned on the optical axis AXe in this manner. After that, necessary adjustments are made to complete the assembly of the electron beam optical unit 18A.

接著，如圖19所示，於組裝妥之電子束光學單元18A(第1板36)上搭載預先另行組裝之光學單元18B。此時，光學單元18B，係以鏡筒78內部之45個光照射裝置80之各個以和45個光電元件54之各個成對應配置之方式，亦即，以投影光學系統86之光軸AXo與電子束光學系統70之光軸AXe大致一致之狀態被搭載。接著，進行與光學單元18B相關之必要調整及電子束光學單元18A與光學單元18B間之必要調整、以及光學單元18B與電子束光學單元18A彼此之機械性連接、電路配線之連接、氣壓迴路之配管連接等，完成曝光裝置100之組裝。 Next, as shown in FIG. 19, a separately assembled optical unit 18B is mounted on the assembled electron beam optical unit 18A (the first plate 36). At this time, the optical unit 18B is arranged in such a manner that each of the 45 light irradiation devices 80 inside the lens barrel 78 corresponds to each of the 45 photoelectric elements 54, that is, the optical axis AXo of the projection optical system 86 and The electron beam optical system 70 is mounted in a state in which the optical axes AXe thereof are substantially the same. Next, the necessary adjustments related to the optical unit 18B and the necessary adjustments between the electron beam optical unit 18A and the optical unit 18B, and the mechanical connection between the optical unit 18B and the electron beam optical unit 18A, the connection of circuit wiring, and the pressure circuit Piping connection and the like complete assembly of the exposure apparatus 100.

又，上述各部分之必要調整，包含針對各種光學系統之用以達成光學精度之調整、針對各種機械系統之用以達成機械精度之調整、以及針對各種電氣系統之用以達成電氣精度之調整。 In addition, the necessary adjustments of the above sections include adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and adjustments to achieve electrical accuracy for various electrical systems.

其次，說明於本第2實施形態之曝光裝置100，於晶圓W之曝光中進行之劑量控制。 Next, the dose control performed by the exposure apparatus 100 of the second embodiment in the exposure of the wafer W will be described.

曝光場內之照度不均，係由主控制裝置110在後述曝光時使用照度分布調整元件94，就每一結晶進行以前述施加電壓之控制對偏光狀態之可變 控制，藉由在對應各個結晶之每一區域(對應各個結晶之圖案產生器84之受光面上之區域)進行光強度(照度)之控制，就結果而言，進行在光電層60之電子射出面上之面內照度分布、及在與此對應之晶圓面上之曝光場RF內照度分布的調整。亦即，適當正確地調整照射於曝光場RF之複數條電子束各個之強度。又，於本實施形態之曝光裝置100，由於圖案產生器84係以GLV構成，因此能以圖案產生器84本身產生半色調(halftone)。因此，主控制裝置110，亦可藉由照射於光電層60之各個光束之強度調整，進行在光電層60之電子射出面上之面內照度分布、及在與此對應之晶圓面上之曝光場RF內照度分布的調整、亦即進行劑量控制。當然，主控制裝置110可併用照度分布調整元件94與圖案產生器84，來進行光電層60在電子射出面上之面內照度分布的調整。 The illuminance unevenness in the exposure field is controlled by the main control device 110 using the illuminance distribution adjusting element 94 during the exposure described below, and the crystallized state is controlled by the aforementioned applied voltage control for each crystal. The light intensity (illumination) is controlled in each area (corresponding to the area on the light-receiving surface of each crystal pattern generator 84). As a result, the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60 is performed. And the adjustment of the illuminance distribution in the exposure field RF on the corresponding wafer surface. That is, the intensity of each of the plurality of electron beams irradiated to the exposure field RF is adjusted appropriately and correctly. Moreover, in the exposure apparatus 100 of this embodiment, since the pattern generator 84 is constituted by GLV, the pattern generator 84 itself can generate a halftone. Therefore, the main control device 110 can also perform in-plane illuminance distribution on the electron exit surface of the photoelectric layer 60 and the corresponding wafer surface by adjusting the intensity of each light beam irradiated to the photoelectric layer 60. The adjustment of the illuminance distribution in the exposure field RF, that is, the dose control. Of course, the main control device 110 may use the illuminance distribution adjusting element 94 and the pattern generator 84 together to adjust the in-plane illuminance distribution of the photoelectric layer 60 on the electron emission surface.

此外，於曝光裝置100，為減輕前方散射成分之影響的PEC(Proximity Effect Correction，鄰近效應修正)，主控制裝置110係預測前方散射成分之影響，透過控制部11[進行使用圖案產生器84(及/或照度分布調整元件94)之面內照度分布之調整。 In addition, in the exposure device 100, in order to reduce the effect of the forward scattering component on the PEC (Proximity Effect Correction, Proximity Effect Correction), the main control device 110 predicts the effect of the forward scattering component, and the control unit 11 [proceeds using the pattern generator 84 ( And / or adjustment of the in-plane illuminance distribution of the illuminance distribution adjusting element 94).

另一方面，為減輕後方散射成分之影響的PEC、及為減輕成霧之影響的FEC(Fogging Effect Correction)，主控制裝置110係透過控制部11，使用照度分布調整元件94以某一程度之空間頻率進行面內照度分布之調整。 On the other hand, in order to reduce the influence of the backscattering component and FEC (Fogging Effect Correction) to reduce the effect of fogging, the main control device 110 passes through the control unit 11 and uses the illumination distribution adjustment element 94 to a certain extent. The spatial frequency adjusts the in-plane illumination distribution.

接著，說明使用圖案產生器84之曝光順序。此處，假設性的設定在晶圓上某一區域內彼此相鄰XY2維配置之多數個10nm方形(與透過孔徑58a之光束之照射區域一致)之像素區域，針對使所有像素曝光之情形進行說明。又，此處，作為扁帶列，係假設有A、B、C、......、K、L之12列。 Next, the exposure sequence using the pattern generator 84 will be described. Here, a plurality of 10-nm square pixel regions (consistent with the irradiation area of the light beam passing through the aperture 58a) arranged in an XY 2-dimensional arrangement adjacent to each other in a certain area on the wafer are assumed to be performed for the case where all pixels are exposed. Instructions. In addition, here, as a flat belt line, 12 lines of A, B, C, ..., K, and L are assumed.

著眼於扁帶列A加以說明如後。針對晶圓上排列於X軸方向之某一行(假設為第K行)之連續的6000像素區域開始使用扁帶列A之曝光。在此曝光開始之時間點，被扁帶列A反射之光束，假設係在起始點(home position)。在 曝光開始後追循晶圓W之+Y方向(或-Y方向)之掃描一邊使光束往+Y方向(或-Y方向)偏向、一邊續行對同一6000像素區域之曝光。接著，例如假設在時間Ta〔s〕該6000像素區域之曝光結束時，在該期間，晶圓載台WST以速度V〔nm/s〕、例如前進Ta×V〔nm〕。此處，為方便起見，設為Ta×V=96〔nm〕。 The description will be focused on the zonal band A as follows. For a continuous 6000-pixel area of a row (assuming the K-th row) arranged in the X-axis direction on the wafer, the exposure of the flat band A is started. At this point in time when the exposure starts, the light beam reflected by the strip line A is assumed to be at the home position. After the exposure starts, the scan following the + Y direction (or -Y direction) of the wafer W is continued while exposing the light beam to the + Y direction (or -Y direction) while continuously exposing the same 6000 pixel area. Next, for example, when the exposure of the 6000-pixel region at time Ta [s] ends, during this period, the wafer stage WST advances at a speed V [nm / s], for example, Ta × V [nm]. Here, for convenience, it is set to Ta × V = 96 [nm].

接著，在晶圓載台WST以速度V、往+Y方向掃描24nm之期間，使光束回到起始點。此時，使光束off以避免實際上晶圓上之抗蝕劑感光。此射束之off，使用AO偏向器90進行。 Next, while the wafer stage WST is scanning at a speed V in the + Y direction for 24 nm, the beam is returned to the starting point. At this time, the light beam is turned off to avoid photoresist exposure on the wafer. This beam is turned off using the AO deflector 90.

此時，由於晶圓載台WST從上述曝光開始時間點往+Y方向前進了120nm，因此第(K+12)行之連續的6000像素區域與在曝光開始時間點之第K行之6000像素區域位在相同位置。 At this time, since the wafer stage WST advances 120 nm from the exposure start time point to the + Y direction, the continuous 6000 pixel area at the (K + 12) th row and the 6000 pixel area at the Kth row at the exposure start time Located in the same position.

因此，以同樣方式，一邊使射束偏向追循晶圓載台WST、一邊使第(K+12)行之連續的6000像素區域曝光。 Therefore, in the same manner, while deflecting the beam toward the wafer stage WST, the continuous 6000-pixel area of the (K + 12) th line is exposed.

實際上，係與第K行之6000像素區域之曝光並行，第(K+1)行~第(K+11)行各個之6000像素，藉由扁帶列B、C、......、K、L而曝光。 In fact, it is parallel to the exposure of the 6000-pixel area in the K-th row, and the 6000-pixels in each of the (K + 1) -th row (K + 11), with the flat band columns B, C, ..... ., K, L and exposure.

以此方式，針對晶圓上之X軸方向之長度60μm之寬度之區域，可一邊於Y軸方向掃描晶圓載台WST一邊進行曝光(掃描曝光)，若使晶圓載台WST於X軸方向步進60μm來進行同樣的掃描曝光的話，即能使於該X軸方向相鄰之長度60μm之寬度區域曝光。因此，藉由交互的重複上述掃描曝光與晶圓載台往X軸方向之步進，即能將晶圓上之1個照射區域之曝光以1個曝光單元500來進行。又，實際上，由於能使用45個曝光單元500並行晶圓上互異之照射區域之曝光，因此可進行晶圓全面之曝光。此外，上述第1實施形態之曝光裝置1000中，作為前述既定曝光順序，可採用與使用上述圖案產生器84之曝光順序相同之順序。 In this way, for a region with a width of 60 μm in the X-axis direction on the wafer, the wafer stage WST can be scanned while scanning in the Y-axis direction (scanning exposure). If the wafer stage WST is stepped in the X-axis direction, When the same scanning exposure is performed at 60 μm, a width region with a length of 60 μm adjacent to the X-axis direction can be exposed. Therefore, by repeatedly repeating the scanning exposure and the step of the wafer stage in the X-axis direction, the exposure of one illuminated area on the wafer can be performed with one exposure unit 500. In addition, in fact, since 45 exposure units 500 can be used for parallel exposure of mutually different irradiated areas on a wafer, a full wafer exposure can be performed. In the exposure apparatus 1000 according to the first embodiment, as the predetermined exposure order, the same order as the exposure order using the pattern generator 84 may be adopted.

附帶一提的，本第2實施形態之曝光裝置100係用於例如互補的微 影。此場合，係以例如在使用ArF準分子雷射光源之液浸曝光中藉由雙層佈局(double patterning)等之利用而形成有L/S圖案之晶圓為曝光對象，而用於為進行該線圖案之切斷之切割圖案的形成。於曝光裝置100，可以圖案產生器84使被72000之扁帶84b中任意之扁帶84b反射之光束成為on，以形成與形成在光電元件54之遮光膜58之72000個孔徑58a之各個對應之切割圖案。此場合，72000條光束可同時為on狀態、亦可不如此。 Incidentally, the exposure apparatus 100 according to the second embodiment is used for, for example, complementary lithography. In this case, for example, a wafer in which an L / S pattern is formed by using a double patterning or the like in liquid immersion exposure using an ArF excimer laser light source is used as an exposure target, and is used for Formation of the cut pattern of the line pattern. In the exposure device 100, the pattern generator 84 can turn on the light beam reflected by any of the 72000 flat strips 84b to form on to correspond to each of the 72000 apertures 58a formed in the light-shielding film 58 of the photovoltaic element 54. Cutting pattern. In this case, 72,000 beams may be on at the same time or not.

於本第2實施形態之曝光裝置100，可獲得與前述第1實施形態之曝光裝置1000同等之效果。不過，由於曝光裝置100中光電元件54兼作為真空間隔壁，因此雖不具有以設置不同於真空間隔壁之光電元件為前提之、上述電子束光學系統70之像面彎曲等之修正功能，但如本第2實施形態般，在光電元件兼作為真空間隔壁之情形時，亦可使光電層60之電子放射面彎曲(可做成非平面)。 In the exposure apparatus 100 of the second embodiment, the same effects as those of the exposure apparatus 1000 of the first embodiment can be obtained. However, since the photoelectric element 54 in the exposure apparatus 100 also serves as a vacuum partition wall, it does not have a correction function for image surface curvature of the above-mentioned electron beam optical system 70 on the premise that a photoelectric element different from the vacuum partition wall is provided, but As in the second embodiment, in a case where the photovoltaic element also functions as a vacuum partition wall, the electron emission surface of the photovoltaic layer 60 may be curved (can be made non-planar).

又，於本第2實施形態之曝光裝置100，由於採用了前述光電膠囊50，因此光電元件54之搬送容易、且易於將光電元件54安裝於電子束光學單元18A之箱體19。此外，僅需將第1真空室34內抽成真空，即能使複數個光電膠囊50各個之蓋構件64以其自重從本體部52離開，以被真空對應致動器66移動之蓋收納板68同時的加以承接，收納至圓孔68a內，因此能以短時間進行複數個光電膠囊50之蓋構件64之卸除。又，在電子束光學單元18A之維修保養時等，僅需將被個別收納在蓋收納板68之複數個圓孔68a內的複數個蓋構件64，同時在壓接於對應之光電膠囊50之本體部52之狀態下，將第1真空室34內開放於大氣，即能藉由光電膠囊50內部(真空)與外部(大氣壓)之壓力差，使各個蓋構件64與對應之本體部52一體化。據此，即能確實的阻止光電層60接觸空氣。再者，在此本體部52裝著蓋構件64之狀態下，可從以可釋放之方式支承本體部52之第1板36釋放本體部52。 In the exposure device 100 according to the second embodiment, since the photoelectric capsule 50 is used, the photoelectric element 54 can be easily transported and the photoelectric element 54 can be easily mounted on the case 19 of the electron beam optical unit 18A. In addition, only the first vacuum chamber 34 needs to be evacuated, that is, the lid member 64 of each of the plurality of photoelectric capsules 50 can be separated from the main body portion 52 by its own weight, and the lid storage plate moved by the vacuum corresponding to the actuator 66 68 is simultaneously received and stored in the circular hole 68a, so the cover members 64 of the plurality of photoelectric capsules 50 can be removed in a short time. In addition, during the maintenance of the electron beam optical unit 18A, etc., it is only necessary to store a plurality of cover members 64 individually in a plurality of circular holes 68a of the cover storage plate 68, and press-contact the corresponding photocapsules 50 at the same time. In the state of the body portion 52, the first vacuum chamber 34 is opened to the atmosphere, that is, each cover member 64 can be integrated with the corresponding body portion 52 by the pressure difference between the inside (vacuum) and the outside (atmospheric pressure) of the photoelectric capsule 50. Into. Accordingly, the photovoltaic layer 60 can be reliably prevented from contacting the air. Further, in a state where the cover member 64 is attached to the main body portion 52, the main body portion 52 can be released from the first plate 36 that detachably supports the main body portion 52.

又，於上述第2實施形態之曝光裝置100，可取代圖27所示之具有 12列扁帶列85之圖案產生器84，使用如圖32所示之具有13列扁帶列85之圖案產生器184。於圖案產生器184，位於圖32中最上部之扁帶列(圖32中為便於識別，記載為85a)係在通常使用之12列之扁帶列(主扁帶列)85中之任一者產生損壞時，取代該損壞之扁帶列85所使用之後備(backup)用扁帶列。後備用扁帶列85a可設置複數個。 Further, in the exposure apparatus 100 of the second embodiment described above, instead of the pattern generator 84 having 12 rows of flat band rows 85 shown in FIG. 27, the pattern generator 84 having 13 rows of flat band rows 85 shown in FIG. 32 can be used to generate器 184。 184. In the pattern generator 184, the uppermost belt band in FIG. 32 (shown as 85a in FIG. 32 for easy identification) is any of the 12 commonly used belt bands (main belt bands) 85. In the event of damage, the backup straps used in place of the damaged straps 85 are used. A plurality of rear spare belt bands 85a may be provided.

又，於曝光裝置100，由於係藉由照度分布調整元件94將圖案產生器84之受光面實質分割為2×12=24之部分區域(參照圖27)，因此亦可就分割之每一部分區域每設置後備用的扁帶列。 In the exposure device 100, since the light receiving surface of the pattern generator 84 is substantially divided into partial regions of 2 × 12 = 24 by the illuminance distribution adjusting element 94 (see FIG. 27), each of the divided partial regions can also be divided. Spare sling rows after each setting.

又，以上之說明中，係將圖案產生器之各扁帶84b與光電元件54之孔徑58a以1：1對應、亦即各扁帶84b與照射於晶圓上之電子束係設定為1：1對應。但不限於此，亦可做成將藉由來自主扁帶列85中之1個扁帶列、例如與後備用扁帶列85a相鄰之扁帶列中所含之1個扁帶84b之光束照射於光電元件54而生成之電子束，照射於標的物晶圓上之一標的物區域(稱為第1標的物區域)，將藉由來自例如扁帶列85a中所含之1個扁帶84b或主扁帶列85中其他扁帶列中所含之1個扁帶84b之光束照射於光電元件54而生成之電子束，可照射於晶圓上之第1標的物區域的構成。亦即，可做成將因來自不同扁帶列分別所含之2個扁帶84b之光束之照射而於光電元件54生成之電子束，可重疊照射於晶圓上之同一標的物區域。據此，構成為例如使該標的物區域之劑量達到所欲狀態。亦即，可將藉由投影光學系統而照射於光電元件54之複數條光束中之1條，從來自圖案產生器84之複數條光束中之一部分之2以上之光束生成。於本第2實施形態，可藉由對圖案產生器84之複數個扁帶84b(可動反射元件)之施加電壓之控制，來變更用以生成藉由投影光學系統而照射於光電元件54之複數條光束中之1條所使用之光束數量，或調整各光束之強度，據此，即能在不使用微透鏡陣列等之聚光構件之情形下，變更從來自圖案產生器84之複數條光束中之一部分之2以上 之光束生成之1條光束之強度。 In addition, in the above description, each of the ribbons 84b of the pattern generator and the aperture 58a of the photoelectric element 54 correspond to 1: 1, that is, each ribbon 84b and the electron beam irradiated on the wafer are set to 1: 1 correspondence. However, it is not limited to this, and it may be made such that a light beam from one of the main strips 85, for example, one strip 84b included in a strip that is adjacent to the backup spare strip 85a, is used. The electron beam generated by irradiating the photoelectric element 54 is irradiated on a target region (referred to as a first target region) on the target wafer. The electron beam generated by irradiating the photoelectric element 54 with the light beam of one flat belt 84b included in 84b or the other flat belt array in the main flat belt array 85 can be irradiated to the structure of the first target region on the wafer. That is, the electron beam generated by the photoelectric element 54 due to the irradiation of the light beams from the two flat belts 84b included in the different flat belt arrays can be made to overlap and irradiate the same target area on the wafer. According to this, for example, it is comprised so that the dose of the said target object area | region may become a desired state. That is, one of the plurality of light beams irradiated to the photoelectric element 54 by the projection optical system can be generated from two or more light beams which are a part of the plurality of light beams from the pattern generator 84. In the second embodiment, by controlling the voltage applied to the plurality of flat ribbons 84b (movable reflective elements) of the pattern generator 84, it is possible to change the plurality of numbers used to generate the light emitted to the photoelectric element 54 by the projection optical system. The number of light beams used by one of the light beams, or the intensity of each light beam can be adjusted, whereby the plurality of light beams from the pattern generator 84 can be changed without using a light collecting member such as a micro lens array. The intensity of one light beam generated by two or more light beams in one part.

本第2實施形態中，亦可採用圖案產生器84之複數個扁帶84b與上述第1實施形態同樣的，被氛圍與微透鏡陣列187所具有之m×n個微透鏡188i，j對應、分別由α×β個扁帶84b構成之m×n群，就每一群，使光束射入對應之微透鏡，而從各微透鏡生成1個光束之構成。此場合，亦可將微透鏡陣列187被置在圖案產生器84與投影光學系統86之間、或投影光學系統86與光電元件之間。或者，取代投影光學系統而設置微透鏡陣列，將來自各群所屬之α×β個扁帶84b之至少一部分之2以上之扁帶84b的光束，以對應之微透鏡聚光在光電元件之光射入面或其近旁之面。如以上所述，在使用微透鏡陣列之構成之情形時，可不設置照度分布調整元件94。藉由調整各群所屬之扁帶84b中之為on之扁帶84b之數量及該扁帶產生之光束之強度至少一方，即能個別的調整以各個微透鏡聚光之光束之強度。 In the second embodiment, a plurality of flat belts 84b of the pattern generator 84 may be used. As in the first embodiment, the atmosphere corresponds to the m × n microlenses 188 i, j of the microlens array 187. An m × n group consisting of α × β flat bands 84b, each of which makes a light beam enter a corresponding microlens, and generates a light beam from each microlens. In this case, the microlens array 187 may be placed between the pattern generator 84 and the projection optical system 86, or between the projection optical system 86 and the photoelectric element. Alternatively, instead of a projection optical system, a microlens array is provided, and the light beams from at least a part of two or more flat bands 84b of the α × β flat bands 84b to which each group belongs are focused by the corresponding microlenses on the light of the photoelectric element. The incident side or its immediate side. As described above, when the configuration of the microlens array is used, the illuminance distribution adjusting element 94 may not be provided. By adjusting the number of on-strips 84b in the strips 84b to which each group belongs and the intensity of the light beam generated by the strips At least one of them can individually adjust the intensity of the light beam focused by each micro lens.

除此之外，亦可取代圖27所示之圖案產生器84，如圖33(A)所示，使用追加了相對主扁帶列85以未達扁帶84b之寬度(扁帶84b之排列節距)1倍距離錯開配置之修正用扁帶列85b的圖案產生器。圖33(A)所示之修正用扁帶列85b，如將圖33(A)之圓B內附近放大顯示之圖33(B)所示，係錯開扁帶84b之一半寬度(扁帶84b之排列節距的一半(1μm))配置。可使用此修正用扁帶列85b，實施PEC(Proximity Effect Correction)等之微小劑量調整。雖能以GLV本身製作半色調，但在進一步欲錯開像素進行修正之情形時是有效的。圖案產生器，可在扁帶列85之外具備後備用扁帶列85a與修正用扁帶列85b。 In addition, instead of the pattern generator 84 shown in FIG. 27, as shown in FIG. 33 (A), the width of the flat belt 84b is less than the width of the flat belt 84b (the arrangement of the flat belt 84b) Pitch) Pattern generator for correction of the stripe line 85b arranged at a distance of 1 time. The correction strip line 85b shown in FIG. 33 (A) is staggered by one and a half width of the flat belt 84b as shown in FIG. 33 (B) in which the vicinity of the circle B in FIG. 33 (A) is enlarged. The arrangement pitch is half (1 μm)). This correction tape 85b can be used to perform small dose adjustments such as PEC (Proximity Effect Correction). Although halftone can be produced with GLV itself, it is effective in the case of further staggering pixels for correction. The pattern generator may include a back-up spare belt line 85a and a correction belt line 85b in addition to the flat belt line 85.

又，上述第2實施形態，雖係針對在蓋收納板68之圓形開口68c周圍設有引出電極112之情形做了例示，但亦可取代或再加上在蓋收納板68設置測量電子束位置之測量構件及檢測電子束之感測器的至少一方。作為前者之測量射束位置之測量構件，可使用具有開口之反射面與檢測來自該反射面之反射 電子之檢測裝置的組合、或表面形成有標記之反射面與檢測從該標記產生之反射電子之檢測裝置的組合等。 In the second embodiment described above, although the case where the lead-out electrode 112 is provided around the circular opening 68c of the cover storage plate 68 has been exemplified, a measurement electron beam may be provided instead of or in addition to the cover storage plate 68. At least one of a position measuring member and a sensor for detecting an electron beam. As the former measurement member that measures the position of the beam, a combination of a reflective surface having an opening and a detection device that detects the reflected electrons from the reflective surface, or a reflective surface with a mark formed on the surface, and detection of the reflected electrons generated from the mark can be used. Combination of detection devices.

又，上述第2實施形態中，可取代兼作為光電膠囊50之本體部52之真空間隔壁的光電元件54，而在本體部52設置真空間隔壁，於該真空間隔壁之下透過既定間隙配置前述各種型式之孔徑一體型光電元件、或孔徑非一體型光電元件，將之收納於本體部52之內部。亦可設置孔徑一體型光電元件54(54a~54d)的驅動機構、或移動光電元件140與孔徑板142(142a~142d)之至少一方的驅動機構。 In the second embodiment described above, instead of the photovoltaic element 54 which also serves as the vacuum partition wall of the main body portion 52 of the photoelectric capsule 50, a vacuum partition wall is provided in the main body portion 52, and a predetermined gap is arranged below the vacuum partition wall. The aforementioned various types of aperture-integrated photovoltaic elements or aperture-non-integrated photovoltaic elements are housed inside the body portion 52. A drive mechanism for the aperture-integrated photoelectric element 54 (54a to 54d) or a drive mechanism for moving at least one of the photoelectric element 140 and the aperture plate 142 (142a to 142d) may be provided.

又，以上說明之光電元件54、54a~54e及孔徑板142、142a~142d之複數個孔徑58a，全部皆為相同尺寸、相同形狀，但複數個孔徑58a無需全部之尺寸皆相同、或全部之形狀皆相同。重要的是，孔徑58a之尺寸，只要是對應之射束能照射於其全域，較對應之射束之尺寸小即可。 In addition, the plurality of apertures 58a of the photovoltaic elements 54, 54a to 54e and the aperture plates 142, 142a to 142d described above are all the same size and the same shape, but the plurality of apertures 58a need not all have the same size or all of them. The shapes are all the same. It is important that the size of the aperture 58a is smaller than the size of the corresponding beam as long as the corresponding beam can irradiate the entire area.

又，前述第1實施形態之曝光裝置1000、及第2實施形態之曝光裝置100中，將圖案產生器以前述主動扁帶與偏壓扁帶交互排列形式之GLV構成之情形時，可將照射於光電元件之複數條光束之至少1條，以來自相鄰之複數扁帶之光生成。 In the exposure apparatus 1000 of the first embodiment and the exposure apparatus 100 of the second embodiment, when the pattern generator is constituted by the GLV in the form of the alternating arrangement of the active webbing and the biased webbing, the irradiation can be performed. At least one of the plurality of light beams on the photovoltaic element is generated by light from an adjacent plurality of flat ribbons.

又，在前述第2實施形態之曝光裝置100中，亦係使用孔徑非一體型之光電元件作為光電元件之情形時，可藉由使孔徑構件在XY平面內伸縮變，據以動態的修正電子束光學系統70之倍率、及低次畸變。 In the exposure device 100 according to the second embodiment, when a non-integrated aperture type photovoltaic element is used as the photovoltaic element, the aperture member can be expanded and contracted in the XY plane to dynamically correct the electrons. Magnification of the beam optical system 70 and low-order distortion.

又，上述第1、第2實施形態(以下，稱各實施形態)，雖係針對曝光裝置所具備之複數個光照射裝置之各個，是具備照明光學系統182b或照明光學系統(82b、98)之情形做了說明，但不限於此，光照射裝置，可使用將由具有複數個發光部之自發光型對比元件陣列所提供之複數條光束照射於圖案產生器之型式的光照射裝置。例如，作為自發光型對比元件陣列，可使用具有複 數個對半導體基板於垂直方向射出光的發光部、例如微LED等之放射二極體、VCSEL或VECSEL等的自發光型對比元件陣列，或具有複數個對半導體基板平行地射出光的發光部、例如光子結晶雷射等的自發光型對比元件陣列。使用自發光型對比元件陣列之情形時，照明光學系統並不一定需要設置。使用自發光型對比元件陣列之情形時，亦能使用微透鏡陣列等之聚光構件，以微透鏡將來自2以上之發光部之光束加以聚光後，使之射入投影光學系統，據以生成照射於光電元件之1條光束。來自自發光型對比元件陣列之複數個發光部之光束可個別的進行on/off。當然，使用自發光型對比元件陣列之情形時，可使用微透鏡陣列等之聚光構件，以微透鏡在不透過投影光學系統之情形下，使來自2以上之發光部之光束，聚光於光電元件之光電層之光射入面或其近旁之面上。 The first and second embodiments (hereinafter referred to as the respective embodiments) are each provided with an illumination optical system 182b or an illumination optical system (82b, 98), although each of the plurality of light irradiation devices provided in the exposure device. The case has been described, but is not limited to this. As the light irradiation device, a light irradiation device of a type that irradiates a plurality of light beams provided by a self-emission type contrast element array having a plurality of light emitting portions to a pattern generator can be used. For example, as the self-luminous type contrast element array, a self-luminous type contrast element array having a plurality of light-emitting portions emitting light to a semiconductor substrate in a vertical direction, a radiation diode such as a micro LED, a VCSEL or VECSEL, or the like can be used, or A self-luminous type contrast element array including a plurality of light-emitting portions that emit light in parallel to a semiconductor substrate, such as a photonic crystal laser. When a self-luminous type contrast element array is used, the illumination optical system does not necessarily need to be installed. When using a self-luminous type contrast element array, it is also possible to use a light-concentrating member such as a micro-lens array to condense the light beams from two or more light-emitting parts with a micro-lens, and then make it incident on the projection optical system. Generates a light beam that irradiates the photovoltaic element. The light beams from the plurality of light emitting portions of the self-emission type contrast element array can be individually turned on / off. Of course, when using a self-luminous type contrast element array, a light-concentrating member such as a microlens array can be used to focus the light beams from two or more light-emitting parts on the microlens without transmitting the projection optical system. The light incident surface of the photoelectric layer of the photovoltaic element or a surface adjacent thereto.

又，與上述第1及第2實施形態同樣的，於具有光電元件與電子束光學系統之曝光裝置中，作為光學單元18B採用例如前述U型反射形式之光學單元(參照圖12(B))之情形時，可將例如做為圖案產生器所使用之一方之空間光調變器1842，做成可動反射構件(例如反射鏡)之數量較另一方之空間光調變器1841少之空間光調變器，將來自空間光調變器1841之複數個可動反射構件(例如反射鏡)之複數條光束透過透鏡(或不透過透鏡)照射於構成對應之空間光調變器1842之1個可動反射構件，將來自該可動反射構件之複數條反射光作為1條光束透過同一孔徑照射於光電層。此場合，可將來自構成空間光調變器1842之複數個可動反射構件各個之複數條反射光，透過同一孔徑照射於光電層。在此場合，與作為圖案產生器使用同一DMD之上述第1實施形態相較，可進行更細微之各個光束之強度調整。 In the same manner as in the first and second embodiments, in the exposure apparatus having a photoelectric element and an electron beam optical system, the optical unit 18B is, for example, an optical unit of the aforementioned U-shaped reflection type (see FIG. 12 (B)). In this case, one of the spatial light modulators 184 2 used as one of the pattern generators can be made into a smaller number of movable reflecting members (such as mirrors) than the other spatial light modulator 184 1 . A spatial light modulator that irradiates a plurality of light beams from a plurality of movable reflecting members (such as mirrors) from the spatial light modulator 184 1 through a lens (or does not transmit a lens) to a corresponding spatial light modulator 184 2 One of the movable reflection members irradiates the plurality of reflected light from the movable reflection member as a light beam and irradiates the photovoltaic layer through the same aperture. In this case, a plurality of reflected lights from each of the plurality of movable reflection members constituting the spatial light modulator 184 2 may be irradiated to the photoelectric layer through the same aperture. In this case, as compared with the first embodiment in which the same DMD is used as the pattern generator, the intensity of each light beam can be adjusted more finely.

又，上述各實施形態，雖係針對曝光裝置所具備之光學系統係具備複數個多光束光學系統200之多列(multi-column)型式之情形做了說明，但不限於此，光學系統亦可以是單列(single-column)型式之多光束光學系統。即 使是此種單列形式之多光束光學系統，亦能適用以上說明之劑量控制、倍率控制、圖案之成像位置偏移之修正、畸變等各種像差之修正、以及使用光電元件或孔徑板之各種要素之修正、光電層之長壽命化等。亦能適用於將單一光束照射於標的物之單列型式之裝置。 In addition, although the embodiments described above have been described with respect to a case where the optical system provided in the exposure apparatus is a multi-column type having a plurality of multi-beam optical systems 200, the invention is not limited to this, and the optical system may be It is a single-column multi-beam optical system. Even this single-row multi-beam optical system can be applied to the dose control, magnification control, pattern position correction, pattern distortion, and other aberration corrections described above, as well as the use of photoelectric elements or aperture plates. Correction of elements, long life of photovoltaic layer, etc. It can also be applied to a single-row type device that irradiates a single beam to the target.

又，上述各實施形態中，可於周壁部76設置開口，將第2真空室72與載台室10之內部做成1個真空室。或者，僅留下周壁部76上端部之一部分並拿掉冷卻板74，將第2真空室72與載台室10之內部做成1個真空室。 In each of the above embodiments, an opening may be provided in the peripheral wall portion 76, and the inside of the second vacuum chamber 72 and the stage chamber 10 may be made into a single vacuum chamber. Alternatively, only a part of the upper end portion of the peripheral wall portion 76 is left, and the cooling plate 74 is removed, and the inside of the second vacuum chamber 72 and the stage chamber 10 is made into a vacuum chamber.

此外，若能將具有所欲剖面形狀(含大小)之光束照射於光電元件54的話，可不使用投影光學系統86。此場合，亦可使用或不使用孔徑。 In addition, if a light beam having a desired cross-sectional shape (including a size) can be irradiated to the photoelectric element 54, the projection optical system 86 may not be used. In this case, the aperture may be used or not.

又，上述各實施形態，雖係針對晶圓W被單獨搬送至晶圓載台WST上，一邊使該晶圓載台WST移動於掃描方向、一邊從多光束光學系統200對晶圓W照射射束以進行曝光的曝光裝置1000、100做了說明，但不限於此，在晶圓W可與被稱為搬運梭(shuttle)之晶圓一體搬送之桌台(保持具)一體在載台上被更換之型式之曝光裝置，亦能適用上述各實施形態(除晶圓載台WST外)。 In each of the embodiments described above, the wafer W is individually transferred to the wafer stage WST, and while the wafer stage WST is moved in the scanning direction, the wafer W is irradiated with a beam from the multi-beam optical system 200 to The exposure apparatuses 1000 and 100 for performing the exposure are described, but are not limited to this. The table W (holding device) which can carry the wafer W together with the wafer called a shuttle is integrally replaced on the stage. This type of exposure device can also be applied to the above-mentioned embodiments (except for the wafer stage WST).

又，於上述各實施形態，雖係針對晶圓載台WST可相對X載台於6自由度方向移動之情形做了說明，但不限於此，晶圓載台WST可以是僅能在XY平面內移動。此場合，測量晶圓載台WST之位置資訊的位置測量系統28，亦可以是能測量在XY平面內之3自由度方向之位置資訊者。 In each of the above embodiments, the case where the wafer stage WST can be moved in the direction of 6 degrees of freedom with respect to the X stage has been described, but it is not limited to this. The wafer stage WST can be moved only in the XY plane. . In this case, the position measurement system 28 that measures the position information of the wafer stage WST may also be a person who can measure position information in a 3 degree of freedom direction in the XY plane.

上述各實施形態，雖係針對光學系統18透過構成載台室10之頂部之框架16被支承於地面上之情形做了說明，但不限於此，亦可以是在無塵室之頂面或真空室之頂面，藉由具備防振功能之懸吊支承機構以例如3點懸吊支承。 Each of the above-mentioned embodiments has described the case where the optical system 18 is supported on the ground through the frame 16 constituting the top of the stage chamber 10, but it is not limited to this, and may be on the top surface of a clean room or a vacuum The ceiling surface of the room is supported by a suspension support mechanism having an anti-vibration function at, for example, a 3-point suspension.

又，構成互補性微影之曝光技術，不限於使用ArF準分子雷射光源之液浸曝光技術與帶電粒子束曝光技術的組合，亦可以是例如將線與空間圖案以使用ArF準分子雷射光源、或KrF準分子雷射光源等其他光源之乾式曝光技 術形成。 In addition, the exposure technique constituting the complementary lithography is not limited to the combination of the liquid immersion exposure technique using the ArF excimer laser light source and the charged particle beam exposure technique, but may also be a pattern of lines and spaces to use the ArF excimer laser. The light source, or other light sources such as KrF excimer laser light source, is formed by dry exposure technology.

又，上述各實施形態，雖係針對標的物為半導體元件製造用之晶圓之情形做了說明，但上述各實施形態之曝光裝置1000、100亦非常適合應用於製造在玻璃基板上形成微細圖案之光罩。 In addition, although each of the above-mentioned embodiments has been described with respect to the case where the target is a wafer for semiconductor device manufacturing, the exposure apparatuses 1000 and 100 of the above-mentioned embodiments are also very suitable for manufacturing fine patterns on a glass substrate Mask.

半導體元件等之電子元件(微元件)，如圖34所示，係經由進行元件之功能性能設計的步驟、從矽材料製作晶圓的步驟、藉由微影技術等於晶圓上形成實際之電路等的晶圓處理步驟、元件組裝步驟(包含切割製程、接合製程、封裝製程)、檢査步驟等加以製造。晶圓處理步驟，包含微影步驟(包含在晶圓上塗布抗蝕劑(感應材)之製程、以前述實施形態之電子束曝光裝置及其曝光方法進行對晶圓之曝光(依據設計之圖案資料的圖案描繪)之製程、以及使曝光後之晶圓顯影之製程)、將殘存有抗蝕劑之部分以外之部分之露出構件以蝕刻加以去除之蝕刻步驟、將蝕刻完成後無需之抗蝕劑去除之抗蝕劑除去步驟等。晶圓處理步驟，可在微影步驟之前，進一步包含前製程之處理(氧化步驟、CVD步驟、電極形成步驟、離子植入步驟等)。此場合，於微影步驟中，係藉由使用上述各實施形態之曝光裝置1000、100實施前述曝光方法，以在晶圓上形成元件圖案，因此能以良好的生產性(高良率)製造高積體度之微元件。特別是在微影步驟(進行曝光之製程)中，進行前述互補性微影，此時藉由使用上述各實施形態之曝光裝置1000、100實施前述曝光方法，能製造積體度更高之微元件。 Electronic components (micro-components) such as semiconductor components are shown in FIG. 34 through the steps of designing the functional performance of the components, the steps of making wafers from silicon materials, and the formation of actual circuits on the wafer by lithography technology. And other wafer processing steps, component assembly steps (including dicing processes, bonding processes, packaging processes), inspection steps, and so on. The wafer processing step includes a lithography step (including a process of coating a resist (inductive material) on the wafer, and exposing the wafer with the electron beam exposure device and the exposure method of the foregoing embodiment (based on the design pattern) The process of drawing the pattern of data), and the process of developing the wafer after exposure), the etching step of removing exposed parts other than the part where the resist remains, and removing the resist after the etching is completed Resist removal step, etc. The wafer processing step may further include pre-processing (oxidation step, CVD step, electrode formation step, ion implantation step, etc.) before the lithography step. In this case, in the lithography step, the aforementioned exposure method is performed by using the exposure apparatuses 1000 and 100 of the above-mentioned embodiments to form element patterns on the wafer, so that it can be manufactured with good productivity (high yield). Integrated micro-components. Especially in the lithography step (the process of performing exposure), the aforementioned complementary lithography is performed. At this time, by using the exposure methods 1000 and 100 of the above-mentioned embodiments to implement the above-mentioned exposure method, it is possible to produce microchips with a higher degree of integration. element.

又，上述各實施形態，雖係針對使用電子束之曝光裝置做了說明，但不限於曝光裝置，熔接等使用電子束對標的物進行既定加工及既定處理之至少一方的裝置、或使用電子束之檢査裝置等，亦能適用上述實施形態之電子束裝置。 In addition, although the above embodiments are described with respect to an exposure apparatus using an electron beam, they are not limited to an exposure apparatus, an apparatus that performs at least one of predetermined processing and predetermined processing using an electron beam, such as welding, or an electron beam The inspection device and the like can also be applied to the electron beam device of the above embodiment.

又，上述各實施形態，雖係針對光電層60以鹼光電轉換膜形成之 情形做了說明，但視電子束裝置之種類、用途，作為光電層不限於鹼光電轉換膜，亦可使用其他種類之光電轉換膜來構成光電元件。 In addition, although the above embodiments have been described in the case where the photoelectric layer 60 is formed of an alkali photoelectric conversion film, depending on the type and application of the electron beam device, the photoelectric layer is not limited to the alkali photoelectric conversion film, and other types may be used. The photoelectric conversion film constitutes a photoelectric element.

又，上述各實施形態，雖有以圓形、矩形等來說明構件、開口、孔等之形狀，但當然不限於此等形狀。 In addition, although the shapes of the members, openings, holes, and the like have been described in each of the embodiments described above, the shapes are not limited to these shapes.

又，上述各實施形態之複數個構成要件可適當的加以組合。因此，上述複數個構成要件中之一部分可以不使用。 In addition, a plurality of constituent elements of each of the above embodiments can be appropriately combined. Therefore, one of the above-mentioned constituent elements may not be used.

又，援用於上述實施形態所引用之關於曝光裝置等之所有公報、國際公開、美國專利申請公開說明書及美國專利說明書等之揭示，作為本說明書記載之一部分。 In addition, all publications concerning exposure devices and the like cited in the above embodiments, international publications, U.S. patent application publication specifications, and U.S. patent specification disclosures are incorporated as part of the description of this specification.

Claims (49)

一種電子束裝置，係對光電元件照射光並以從該光電元件產生之電子作為電子束照射於標的物，其具備：光學元件，其能提供複數條光束；聚光構件，係配置成使來自該光學元件之複數位置之複數條光束聚光於該光電元件之第1位置；以及電子光學系統，係以從該光電元件放射出之電子作為電子束照射於該標的物。     An electron beam device irradiates light to a photoelectric element and irradiates electrons generated from the photoelectric element as an electron beam to a target. The electron beam device includes: an optical element capable of providing a plurality of light beams; A plurality of light beams at a plurality of positions of the optical element are condensed at a first position of the photoelectric element; and an electro-optical system uses electrons emitted from the photoelectric element to irradiate the target object as electron beams.     如請求項1所述之電子束裝置，其中，該聚光構件係配置成使來自該光學元件之與該複數位置不同之複數位置之複數條光束聚光於該光電元件之第2位置。     The electron beam device according to claim 1, wherein the light condensing member is configured to condense a plurality of light beams from the optical element at a plurality of positions different from the plurality of positions at the second position of the photoelectric element.     如請求項2所述之電子束裝置，其中，該聚光構件，具有用以使該複數條光束聚光於該第1位置的第1聚光元件、與用以使該複數條光束聚光於該第2位置的第2聚光元件。     The electron beam device according to claim 2, wherein the light condensing member has a first light concentrating element for condensing the plurality of light beams at the first position and a light condensing for the plurality of light beams A second light collecting element at the second position.     如請求項3所述之電子束裝置，其中，該光電元件之來自該光學元件之複數條光束聚光之面，相對該第1聚光元件及該第2聚光元件之光軸垂直；該光電元件之該面包含該第1位置與該第2位置。     The electron beam device according to claim 3, wherein a surface of the photoelectric element on which the plurality of light beams from the optical element condenses is perpendicular to the optical axes of the first condensing element and the second condensing element; The surface of the photoelectric element includes the first position and the second position.     如請求項1至4中任一項所述之電子束裝置，其中，該聚光構件使來自該光學元件之複數條光束聚光於第1面。     The electron beam device according to any one of claims 1 to 4, wherein the light condensing member focuses a plurality of light beams from the optical element on the first surface.     如請求項5所述之電子束裝置，其中，該聚光構件使該複數條光束聚光於該第1面內之第1中間位置；來自該第1中間位置之複數條光束照射於該第1位置。     The electron beam device according to claim 5, wherein the focusing member focuses the plurality of light beams at a first intermediate position in the first surface; the plurality of light beams from the first intermediate position irradiate the first light beam. 1 position.     如請求項6所述之電子束裝置，其具備：配置在來自該光學元件之複數條光束之光路上的第1光學系統；以及 作為第2光學系統的該電子光學系統；該第1光學系統，將來自該第1面內之該第1中間位置之光束聚光於該光電元件。     The electron beam device according to claim 6, comprising: a first optical system arranged on an optical path of a plurality of light beams from the optical element; and the electron optical system as a second optical system; the first optical system , Condensing the light beam from the first intermediate position in the first surface to the photoelectric element.     如請求項7所述之電子束裝置，其中，該第1光學系統使該第1面與該光電元件之該第1位置在光學上共軛、或大致共軛。     The electron beam device according to claim 7, wherein the first optical system optically conjugates or substantially conjugates the first surface to the first position of the photovoltaic element.     如請求項5所述之電子束裝置，其具備配置在來自該光學元件之複數條光束之光路上的第1光學系統；以及作為第2光學系統之該電子光學系統；該聚光構件，使來自該光學元件之複數位置之複數條光束透過該第1光學系統聚光於該第1面。     The electron beam device according to claim 5, comprising: a first optical system arranged on a light path of a plurality of light beams from the optical element; and the electron optical system as a second optical system; the light condensing member, A plurality of light beams from a plurality of positions of the optical element are condensed on the first surface through the first optical system.     如請求項9所述之電子束裝置，其中，該第1面包含該第1位置。     The electron beam device according to claim 9, wherein the first surface includes the first position.     如請求項7至10中任一項所述之電子束裝置，其中，該第1光學系統包含縮小投影光學系統。     The electron beam device according to any one of claims 7 to 10, wherein the first optical system includes a reduction projection optical system.     如請求項7至11中任一項所述之電子束裝置，其中，該聚光構件之至少1個光軸與該第1光學系統之光軸一致或與該第1光學系統之光軸平行。     The electron beam device according to any one of claims 7 to 11, wherein at least one optical axis of the light-concentrating member coincides with the optical axis of the first optical system or is parallel to the optical axis of the first optical system .     如請求項1至12中任一項所述之電子束裝置，其中，該光學元件包含複數個可動反射元件；從該光學元件之該複數位置而來之複數條光束，包含從該光學元件之複數個可動反射元件中之一部分之2以上之可動反射元件而來之複數條光束。     The electron beam device according to any one of claims 1 to 12, wherein the optical element includes a plurality of movable reflective elements; and the plurality of light beams from the plurality of positions of the optical element include the light beams from the optical element. A plurality of light beams from two or more of the plurality of movable reflection elements from the movable reflection element.     如請求項13所述之電子束裝置，其中，該光學元件包含反射鏡陣列或光繞射型光閥。     The electron beam device according to claim 13, wherein the optical element includes a mirror array or a light diffraction type light valve.     如請求項13或14所述之電子束裝置，其中，該2以上之可動反射元件之各個，可控制成使來自反射面之光束射入該聚光構件之第1狀態、與使來自該反射面之光束不射入該聚光構件之第2狀態中之任一方。     The electron beam device according to claim 13 or 14, wherein each of the two or more movable reflecting elements can be controlled to cause the light beam from the reflecting surface to enter the first state of the light condensing member and to cause the light beam from the reflection The surface light beam does not enter any one of the second states of the light-concentrating member.     如請求項13至15中任一項所述之電子束裝置，其中，該光學元件，係變更該2以上之該可動反射元件之相對位置以產生射入該聚光構件之該複數條光束之至少1條。     The electron beam device according to any one of claims 13 to 15, wherein the optical element is to change the relative position of the movable reflection element of two or more to generate the plurality of light beams that are incident on the light condensing member. At least one.     如請求項13至16中任一項所述之電子束裝置，其中，該2以上之可動反射元件，係以變更來自該2以上之可動反射元件中之1個之光、與來自該2以上之可動反射元件中另1個之光之間之相位差的方式加以控制。     The electron beam device according to any one of claims 13 to 16, wherein the two or more movable reflecting elements change the light from one of the two or more movable reflecting elements and the light from one of the two or more movable reflecting elements. The phase difference between the other light in the movable reflection element is controlled.     如請求項13至17中任一項所述之電子束裝置，其中，該標的物係一邊往與該電子光學系統之光軸正交之第1方向移動、一邊被該電子束照射；該複數個可動反射元件係在與該電子光學系統之光軸正交、且與該第1方向正交之第2方向對應之方向排列配置。     The electron beam device according to any one of claims 13 to 17, wherein the subject is irradiated with the electron beam while moving in the first direction orthogonal to the optical axis of the electron optical system; The movable reflection elements are arranged in a direction orthogonal to the optical axis of the electron optical system and corresponding to a second direction orthogonal to the first direction.     如請求項1至18中任一項所述之電子束裝置，其中，該光學元件具有光電轉換層。     The electron beam device according to any one of claims 1 to 18, wherein the optical element has a photoelectric conversion layer.     如請求項19所述之電子束裝置，其中，通過複數個孔徑之複數條光束射入該光電轉換層。     The electron beam device according to claim 19, wherein a plurality of light beams passing through a plurality of apertures are incident on the photoelectric conversion layer.     如請求項20所述之電子束裝置，其中，聚光於該第1位置之該複數條光束透過該複數個孔徑中之1個射入該光電轉換層。     The electron beam device according to claim 20, wherein the plurality of light beams condensed at the first position pass through one of the plurality of apertures and enter the photoelectric conversion layer.     如請求項20或21所述之電子束裝置，其具備具有該複數個孔徑之孔徑構件。     The electron beam device according to claim 20 or 21, comprising an aperture member having the plurality of apertures.     如請求項20至22中任一項所述之電子束裝置，其中，該光電元件具有該複數個孔徑。     The electron beam device according to any one of claims 20 to 22, wherein the photovoltaic element has the plurality of apertures.     如請求項20至23中任一項所述之電子束裝置，其中，該複數個孔徑能在與該電子光學系統之光軸正交之方向移動。     The electron beam device according to any one of claims 20 to 23, wherein the plurality of apertures are movable in a direction orthogonal to an optical axis of the electron optical system.     如請求項20至24中任一項所述之電子束裝置，其中，該複數個孔徑中至少1個之形狀，與通過該複數個孔徑之各個的複數條光束因射入該光電 轉換層而生成之該複數條電子束在該標的物上之照射區域之形狀相異。     The electron beam device according to any one of claims 20 to 24, wherein a shape of at least one of the plurality of apertures and a plurality of light beams passing through each of the plurality of apertures are incident on the photoelectric conversion layer. The shape of the irradiation area of the generated plurality of electron beams on the target is different.     如請求項25所述之電子束裝置，其中，係以該複數條電子束之各個在該標的物上之照射區域成矩形之方式，決定該至少1個孔徑之形狀。     The electron beam device according to claim 25, wherein the shape of the at least one aperture is determined in such a manner that the irradiation area of each of the plurality of electron beams on the target is rectangular.     如請求項20至26中任一項所述之電子束裝置，其中，該複數個孔徑之配置係根據該電子光學系統之光學特性加以決定。     The electron beam device according to any one of claims 20 to 26, wherein the arrangement of the plurality of apertures is determined according to the optical characteristics of the electron optical system.     如請求項20至27中任一項所述之電子束裝置，其中，該標的物係一邊往與該電子光學系統之光軸正交之第1方向移動、一邊被該電子束照射；該複數個孔徑，包含：包含在與該電子光學系統之光軸正交、且與該第1方向正交之第2方向對應之方向以第1節距配置之複數個孔徑的第1群、與包含在與該第2方向對應之方向以第2節距配置之複數個孔徑的第2群；該第1群與該第2群在與該第1方向對應之方向分離。     The electron beam device according to any one of claims 20 to 27, wherein the target object is irradiated with the electron beam while moving in the first direction orthogonal to the optical axis of the electron optical system; Apertures include: a first group including a plurality of apertures arranged at a first pitch in a direction orthogonal to the optical axis of the electron optical system and corresponding to a second direction orthogonal to the first direction, and including A second group of a plurality of apertures arranged at a second pitch in a direction corresponding to the second direction; the first group and the second group are separated in a direction corresponding to the first direction.     如請求項28所述之電子束裝置，其能在該複數條光束之光路上配置該第1群中所含之該複數個孔徑的第1狀態、與在該複數條光束之光路上配置該第2群中所含之該複數個孔徑的第2狀態中之一方切換為另一方。     The electron beam device according to claim 28, wherein the first state of the plurality of apertures included in the first group can be arranged on the optical path of the plurality of beams, and the first state of the plurality of beams can be disposed on the optical path of the plurality of beams. One of the second states of the plurality of apertures included in the second group is switched to the other.     如請求項19至29中任一項所述之電子束裝置，其中，該光電轉換層之電子放射面具有第1部分與第2部分；於該第2光學系統之光軸方向，該第1部分之位置與該第2部分之位置相異。     The electron beam device according to any one of claims 19 to 29, wherein the electron emission surface of the photoelectric conversion layer has a first part and a second part; and in the direction of the optical axis of the second optical system, the first The position of the part is different from the position of the second part.     如請求項1至30中任一項所述之電子束裝置，其進一步具備對該光學元件照射1個或2以上之照明光的照明系統。     The electron beam device according to any one of claims 1 to 30, further comprising an illumination system that irradiates the optical element with one or more illumination lights.     如請求項31所述之電子束裝置，其中，該照明系統具有從來自光源之光，生成具有既定剖面形狀之該照明光的成形光學系統。     The electron beam device according to claim 31, wherein the illumination system includes a shaping optical system that generates the illumination light having a predetermined cross-sectional shape from the light from the light source.     如請求項31或32所述之電子束裝置，其中，該標的物係一邊往與該電子光學系統之光軸正交之第1方向移動、一邊被該複數條電子束照射；為了將該複數條電子束照射於標的物，照射於該光電元件之複數條光束之 各個，具有在和與該第2光學系統之光軸正交且與該第1方向正交之第2方向對應之方向長的剖面形狀。     The electron beam device according to claim 31 or 32, wherein the target object is irradiated with the plurality of electron beams while moving in the first direction orthogonal to the optical axis of the electron optical system; Each of the plurality of electron beams is irradiated on the target, and each of the plurality of beams irradiated on the photoelectric element has a length corresponding to a second direction orthogonal to the optical axis of the second optical system and orthogonal to the first direction. Profile shape.     如請求項31至33中任一項所述之電子束裝置，其中，該照明系統具有間歇點亮功能。     The electron beam device according to any one of claims 31 to 33, wherein the lighting system has an intermittent lighting function.     如請求項1至34中任一項所述之電子束裝置，其中，該電子光學系統具有靜電偏向透鏡。     The electron beam device according to any one of claims 1 to 34, wherein the electron optical system has an electrostatic deflection lens.     如請求項1至35中任一項所述之電子束裝置，其中，該標的物係一邊往與該電子光學系統之光軸正交之第1方向移動、一邊被該電子束照射；該電子光學系統，具有該第1方向之長度為t、與該第2光學系統之光軸大致正交且與該第1方向正交之第2方向之長度為s之矩形曝光場；來自該電子光學系統之複數條電子束，照射於該曝光場內。     The electron beam device according to any one of claims 1 to 35, wherein the target object is irradiated by the electron beam while moving in the first direction orthogonal to the optical axis of the electron optical system; An optical system having a rectangular exposure field with a length of t in the first direction, a length of s substantially orthogonal to the optical axis of the second optical system, and a length of s in the second direction orthogonal to the first direction; from the electron optics A plurality of electron beams of the system are irradiated in the exposure field.     如請求項36所述之電子束裝置，其中，該曝光場被設定為包含該電子光學系統之光軸。     The electron beam apparatus according to claim 36, wherein the exposure field is set to include an optical axis of the electron optical system.     如請求項36或37所述之電子束裝置，其中，該電子光學系統係縮小電子光學系統；該曝光場被設定在該電子光學系統之像差有效區域內。     The electron beam device according to claim 36 or 37, wherein the electron optical system is a reduced electron optical system; and the exposure field is set within an aberration effective area of the electron optical system.     如請求項1至38中任一項所述之電子束裝置，其中，該光電元件具有電子放射面；並進一步具備配置該電子放射面之真空室；於該真空室內，該複數條電子束照射於該標的物。     The electron beam device according to any one of claims 1 to 38, wherein the photoelectric element has an electron emission surface; and further includes a vacuum chamber configured with the electron emission surface; and in the vacuum chamber, the plurality of electron beams are irradiated On the subject matter.     如請求項39所述之電子束裝置，其中，該真空室包含配置該電子放射面之第1室、與來自該第1室之電子束通過之第2室。     The electron beam apparatus according to claim 39, wherein the vacuum chamber includes a first chamber in which the electron emission surface is arranged, and a second chamber passing through the electron beam from the first chamber.     如請求項1至40中任一項所述之電子束裝置，其分別具備複數個該光學元件與該電子光學系統。     The electron beam device according to any one of claims 1 to 40, each including a plurality of the optical elements and the electron optical system.     一種電子束裝置，係對光電元件照射光，並以從該光電元件產生之電子作為電子束照射於標的物，其具備：光學元件，其能提供可個別控制之複數條光束；聚光構件，係配置成來自該光學元件之複數條光束聚光於該光電元件之第1位置；以及電子光學系統，係以從該光電元件放射出之電子作為電子束照射於該標的物。     An electron beam device that irradiates light to a photoelectric element and irradiates electrons generated from the photoelectric element as an electron beam to a target. The electron beam device includes: an optical element that can provide a plurality of light beams that can be individually controlled; a light collecting member, Is arranged so that a plurality of light beams from the optical element are condensed at the first position of the photoelectric element; and an electron optical system is that the electrons emitted from the photoelectric element are irradiated to the target object as electron beams.     如請求項42所述之電子束裝置，其中，來自該光學元件之複數位置之複數條光束，係以聚光於該第1位置之方式被該聚光構件聚光。     The electron beam device according to claim 42, wherein the plurality of light beams from the plurality of positions of the optical element are condensed by the condensing member in a manner of condensing at the first position.     如請求項43所述之電子束裝置，其中，來自該光學元件之其他複數位置之複數條光束，係以聚光於該光電元件之第2位置之方式被該聚光構件聚光。     The electron beam device according to claim 43, wherein the plurality of light beams from other plural positions of the optical element are condensed by the light condensing member so as to be condensed at the second position of the optoelectronic element.     如請求項42所述之電子束裝置，其中，該光電元件具有光電轉換層；該光學元件具有複數個可動反射元件；可使來自該複數個可動反射元件之複數條光束，透過1個孔徑照射於該光電轉換層。     The electron beam device according to claim 42, wherein the photoelectric element has a photoelectric conversion layer; the optical element has a plurality of movable reflection elements; and a plurality of light beams from the plurality of movable reflection elements can be irradiated through one aperture On the photoelectric conversion layer.     一種包含微影製程之元件製造方法：該微影製程，包含在標的物上形成線與空間圖案的動作、與使用請求項1至45中任一項之電子束裝置進行構成該線與空間圖案之線圖案之切斷的動作。     A method for manufacturing a component including a lithography process: the lithography process includes an action of forming a line and a space pattern on an object, and the use of the electron beam device of any one of claims 1 to 45 to constitute the line and space pattern The cutting action of the line pattern.     一種曝光方法，係對光電元件照射光，並以從該光電元件產生之電子作為電子束照射於標的物，其包含：使來自可提供複數條光束之光學元件之複數個位置之複數條光束聚光於該光電元件之第1位置之方式以聚光構件加以聚光的動作；以及 以從該光電元件放射出之電子作為電子束使用電子光學系統照射於該標的物的動作。     An exposure method is to irradiate light to a photoelectric element and irradiate electrons generated from the photoelectric element as an electron beam to a target. The method includes: focusing a plurality of light beams from a plurality of positions of an optical element capable of providing a plurality of light beams An operation of condensing light with a condensing member so as to illuminate the first position of the photovoltaic element; and an operation of irradiating the target with an electron optical system using electrons emitted from the photovoltaic element as an electron beam.     如請求項47所述之曝光方法，其中，該標的物係一邊往與該第2光學系統之光軸正交之第1方向移動、一邊被該電子束照射。     The exposure method according to claim 47, wherein the target object is irradiated with the electron beam while moving in the first direction orthogonal to the optical axis of the second optical system.     一種包含微影製程之元件製造方法：該微影製程，包含在標的物上形成線與空間圖案的動作、與使用請求項47或48之曝光方法進行構成該線與空間圖案之線圖案之切斷的動作。     A method for manufacturing a component including a lithography process: the lithography process includes an action of forming a line and a space pattern on an object, and cutting the line pattern constituting the line and the space pattern using an exposure method of claim 47 or 48 Breaking action.    
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