TW201932635A - 高蝕刻選擇性的非晶碳膜 - Google Patents
高蝕刻選擇性的非晶碳膜 Download PDFInfo
- Publication number
- TW201932635A TW201932635A TW107140950A TW107140950A TW201932635A TW 201932635 A TW201932635 A TW 201932635A TW 107140950 A TW107140950 A TW 107140950A TW 107140950 A TW107140950 A TW 107140950A TW 201932635 A TW201932635 A TW 201932635A
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- Prior art keywords
- amorphous carbon
- carbon film
- gpa
- hard mask
- dopant
- Prior art date
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- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 173
- 238000012545 processing Methods 0.000 claims abstract description 125
- 238000000034 method Methods 0.000 claims abstract description 103
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000002019 doping agent Substances 0.000 claims abstract description 40
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 39
- 238000000151 deposition Methods 0.000 claims abstract description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 229910052734 helium Inorganic materials 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052786 argon Inorganic materials 0.000 claims abstract description 13
- 239000001307 helium Substances 0.000 claims abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 229910052724 xenon Inorganic materials 0.000 claims abstract description 10
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052743 krypton Inorganic materials 0.000 claims abstract description 9
- 229910052754 neon Inorganic materials 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 72
- 239000007789 gas Substances 0.000 claims description 65
- 150000002500 ions Chemical class 0.000 claims description 47
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- 229930195733 hydrocarbon Natural products 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 53
- 230000008021 deposition Effects 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 125
- 239000000463 material Substances 0.000 description 44
- 238000005468 ion implantation Methods 0.000 description 23
- 239000001257 hydrogen Substances 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
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- 238000011282 treatment Methods 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 239000003085 diluting agent Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 3
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- 238000012546 transfer Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
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- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical compound CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 230000008878 coupling Effects 0.000 description 2
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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Abstract
於此描述的實施方案一般關於積體電路的製造。更具體地,於此描述的實施方案提供了用於在基板上沉積非晶碳膜的技術。在一個實施方案中,提供了一種形成非晶碳膜的方法。方法包含在第一處理區域中的位於基座上的底層上沉積非晶碳膜。方法進一步包含在第二處理區域中將摻雜劑或惰性物種植入到非晶碳膜中。摻雜劑或惰性物種選自碳、硼、氮、矽、磷、氬、氦、氖、氪、氙或其組合。方法進一步包含圖案化經摻雜的非晶碳膜。方法進一步包含蝕刻底層。
Description
於此描述的實施方案一般關於積體電路的製造。更具體地,於此描述的實施方案提供了用於在基板上沉積非晶碳膜的技術。
積體電路已經發展成可在單個晶片上包括數百萬個電晶體、電容和電阻的複雜裝置。晶片設計的發展不斷地涉及更快的電路和更大的電路密度。對具有更大電路密度的更快電路的需求對用以製造這種積體電路的材料提出了相應的要求。特別地,隨著積體電路部件的尺寸減小到次微米級,低電阻率的導電材料以及低介電常數的絕緣材料用以從這些部件獲得合適的電性能。
對更大積體電路密度的需求也對在積體電路部件的製造中使用的處理順序提出了要求。例如,在使用傳統光刻技術的處理順序中,在沉積在基板上的材料層的堆疊之上形成一層能量敏感抗蝕劑。將能量敏感抗蝕劑層曝露於圖案的圖像,以形成光阻劑遮罩。此後,使用蝕刻處理將遮罩圖案轉移到堆疊的材料層的一個或多個。選擇在蝕刻處理中使用的化學蝕刻劑以使堆疊的材料層具有比能量敏感抗蝕劑的遮罩更大的蝕刻選擇性。也就是說,化學蝕刻劑以比能量敏感抗蝕劑快得多的速率蝕刻材料堆疊的一個或多個層。在抗蝕劑之上對堆疊的一個或多個材料層的蝕刻選擇性防止能量敏感抗蝕劑在完成圖案轉移之前被消耗。
隨著圖案尺寸減小,能量敏感抗蝕劑的厚度相應地減小,以便控制圖案分辨率。由於化學蝕刻劑的侵蝕,這種薄的抗蝕劑層可能不足以在圖案轉移處理期間遮蔽下面的材料層。通常在能量敏感抗蝕劑層和下面的材料層之間使用稱為硬遮罩的中間層(如,氮氧化矽、矽卡賓或碳膜),以促進圖案轉移,因為對化學蝕刻劑具有更大的抵抗力。具有高蝕刻選擇性和高沉積速率的硬遮罩材料是可期望的。隨著臨界尺寸(CD)減小,當前的硬遮罩材料相對於下面的材料(如,氧化物和氮化物)缺乏目標蝕刻選擇性並且通常難以沉積。
因此,本領域存在有一種改進的硬遮罩層和用於沉積改進的硬遮罩層的方法的需求。
於此描述的實施方案一般關於積體電路的製造。更具體地,於此描述的實施方案提供了用於在基板上沉積非晶碳膜的技術。在一個實施方案中,提供了一種形成非晶碳膜的方法。方法包含在第一處理區域中的位於基座上的底層上沉積非晶碳膜。方法進一步包含藉由在第二處理區域中將摻雜劑或惰性物種植入到非晶碳膜中來形成摻雜的非晶碳膜。摻雜劑或惰性物種選自碳、硼、氮、氮二聚物、矽、磷、氬、氦、氖、氪、氙或其組合。方法進一步包含圖案化摻雜的非晶碳膜並蝕刻底層。
在另一個實施方案中,提供了一種形成非晶碳膜的方法。方法包含在第一處理區域中的位於基座上的底層上沉積非晶碳膜。方法進一步包含藉由在第二處理區域中將摻雜劑植入到非晶碳膜中來形成摻雜的非晶碳膜。摻雜劑或惰性物種選自碳、硼、氮、氮二聚物矽、磷、氬、氦、氖、氪、氙或其組合。方法進一步包含圖案化摻雜的非晶碳膜。方法進一步包含蝕刻底層,其中摻雜的非晶碳膜在633nm處具有從約2.1至約2.2的折射率。
在又一實施方案中,提供一種包含非晶碳膜的硬遮罩層。非晶碳膜藉由電漿增強化學氣相沉積處理隨後進行碳植入處理而形成。摻雜劑或惰性物種選自碳、硼、氮、氮二聚物、矽、磷、氬、氦、氖、氪、氙或其組合。非晶碳膜在用於半導體應用的蝕刻處理中用作硬遮罩層。
以下的揭露內容描述了用於在基板上沉積類金剛石碳膜的技術。某些細節在以下描述和第1-5B圖中闡述,以提供對本揭露書的各種實施方案的透徹理解。描述通常與電漿處理和離子植入相關聯的已知結構和系統的其他細節未在以下的揭露內容中闡述,以避免不必要地模糊對各種實施方案的描述。
圖式中所示的許多細節、尺寸、角度和其他特徵僅僅是對特定實施方案的說明。因此,在不背離本揭露書的精神或範圍的情況下,其他實施方案可具有其他細節、部件、尺寸、角度和特徵。另外,可在沒有下面描述的若干細節的情況下實施本揭露書的進一步實施方案。
下面將參考PECVD沉積處理和離子植入處理來描述於此所述的實施方案,PECVD沉積處理和離子植入處理可使用任何合適的薄膜沉積和植入系統來執行。合適系統的示例包括可使用DXZ®處理腔室的CENTURA®系統、PRECISION 5000®系統、PRODUCER®系統、PRODUCER® GTTM
系統、PRODUCER® XP PrecisionTM
系統、PRODUCER® SETM
系統、Sym3®處理腔室和MesaTM
處理腔室,所有這些都可從加州聖克拉拉市的應用材料公司商購獲得。離子植入處理可藉由束線或電漿植入工具執行。用以執行植入處理的示例性系統包括(例如)VARIAN VIISta ® TRIDENT系統、VIISta® 3000XP系統、VIISta® 900XP系統、VIISta® HCP系統、VIISta® Trident Crion™系統和VIISta® PLAD系統,可從加州聖克拉拉市的應用材料公司獲得。其他能夠執行PECVD及/或離子植入處理的工具也可適用於受益於於此所述的實施方案。另外,可使用能夠實現於此所述的PECVD及/或離子植入處理的任何系統而得利。於此描述的設備描述是說明性的,且不應該被理解或解釋為限制於此描述的實施方案的範圍。
縮小積體電路的物理限制導致了與平面晶圓表面正交的積體電路的擴展,亦即,高深寬比(HAR),裝置空間的三維利用。用以適應動態蝕刻選擇性和越來越嚴格的製造公差的奈米製造策略已經導致了硬遮罩(HM)材料庫,諸如摻雜有矽、鈦、鎢或硼的碳膜;以及介電氧化矽-氮化物(ON/OP)膜。以結合方式使用,這些材料在蝕刻選擇性和低到1X節點的圖案化中提供了優勢。非晶碳硬遮罩材料的創新對於在下一代裝置結構中實現高深寬比(HAR)基準是期望的。與金屬和介電質溶液相比,非晶碳是可清洗的,相對於下面的ON/OP硬遮罩膜提供高選擇性。非晶碳硬遮罩的另一個好處是非晶碳硬遮罩的相應光學性質,其可調諧以提供對準的圖案化特徵的透明度,因此消除了對部分硬遮罩開放處理的需要。然而,目前用於非晶碳硬遮罩的整合硬體和處理相對於金屬摻雜和介電質硬遮罩對應物表現出相對差的機械性質。對於具有高sp3
含量的膜而言,可看到當前生成的純碳膜(如,奈米晶金剛石、超奈米晶金剛石、類金剛石碳和物理氣相沉積碳)的最高蝕刻選擇性,類似於金剛石的混種。類金剛石碳硬遮罩中長期存在的高明暗度(value)問題是由於sp3
混種碳導致的> 1GPa的壓縮膜應力,由於微影覆蓋和靜電吸附限制,這限制了圖案化性能。
具有64x層堆疊應用和100:1深寬比的下一代3D NAND產品需要允許圖案化同時抵抗變形並同時展示改進的微影覆蓋的薄膜。類金剛石碳膜將碳物種特定的蝕刻選擇性和優異的結構完整性結合。這些類金剛石碳膜將只有在其機械性質(其預兆為楊氏模數)能夠在減小的應力和平面內變形(「IPD」)值下進一步改善時才能保持競爭力。
本揭露書的一些實施方案提供了使用現有硬體且對產出或實現成本的影響很小的處理。本揭露書的一些實施方案解決了微影覆蓋的高明暗度問題,以及與差的楊氏模數(E)關聯的高應力。本揭露書的一些實施方案提供了藉由調諧電漿沉積機制而將非晶碳的模數增加約2倍(如,從約64GPa增加到約138GPa)的一種獨特處理。通過離子植入實現關鍵膜性質的進一步改善,離子植入使非晶碳膜的楊氏模數增加額外30%(~180GPa),同時將壓縮應力降低75%(從約-1200降低到約-300MPa)。此外,與當前一代的純碳硬遮罩膜相比,PECVD加上離子植入的組合提供了實現顯著更低的面內畸變(<3奈米覆蓋誤差)的非晶碳膜。
在改善非晶碳硬遮罩膜的性能方面,本揭露書的第一態樣定義了新的處理窗口。這個新的處理窗口的目標是儘管存在高應力(如,約-1200GPa)但改善模數的低面內畸變。不受理論的束縛,但據信這些改進是藉由通過降低壓力而增加電漿的鞘尺寸和增加處理間隔導致電漿溫度降低來實現的。儘管合成溫度降低,但沉積速率顯著降低證實了更高的鞘勢和Bohm速度。這有利於更多地形成碳-碳鍵,同時降低膜中的氫含量。在一個實施方案中,沉積後在633nm處測量的消光係數值為0.72,表明更高的C=C,石墨特徵。此外,降低電漿的密度增加了平均自由路徑、轟擊能量並改善了晶圓表面上的離子能量分佈函數的均勻性。因為較弱的電漿(藉由轟擊使非晶化最小化)導致的膜內特質顯示楊氏模數(E)、硬度和密度的增加。不受理論束縛,但據信增加的平均自由路徑導致針對微影覆蓋的較低面內畸變(IPD)。
本揭露書的第二態樣(在線離子植入)用於將非晶碳膜的應力分量降低高達約75%(如,從約-1200降低到約-300MPa),進一步改善楊氏模數(如,從約138改善到約177GPa)並使面內畸變輪廓更中心對稱。離子植入可在一定溫度範圍(如,從約攝氏-100度至約攝氏500度)下進行。於此建立的是,降低非晶碳膜的離子植入溫度使植入的摻雜劑的重排最小化-證實了植入的有益效果,諸如緻密化、sp3
強化和氫還原。不受理論束縛,但據信離子植入重新分佈了局部應力並有助於將整個晶圓應力減小到(例如)膜後沉積值的約25%。基於進入的晶圓模數而發展用於植入的正確處理方案,以在減小應力的同時最佳地強化模數,以繞過膜改善的飽和度的HVP。
與當前可取得的純碳硬遮罩膜相比,所得到的非晶碳膜顯示30-50%的蝕刻選擇性的改善,同時還匹配先前的覆蓋要求。
在本揭露書的一些實施方案中,經由電漿增強化學氣相沉積將非晶碳膜沉積到裸矽覆蓋晶圓上。在一些實施方案中,碳前驅物為C3
H6
,其中電漿輪廓和均勻性由氬氣和氦氣維持。這項工作的範圍還包括使用C4
H8
、C2
H6
、C2
H4
、C2
H2
、CO2
和CF4
等。這個應用的高頻RF為13.56 MHz。單晶圓硬體可在高達攝氏650度的溫度下進行沉積,並使用氣體盒、帶有平面加熱器邊緣環配置的噴頭組合,從中心到邊緣保持電漿穩定性。電漿輪廓和與晶圓表面的耦合可藉由RF的分層而進一步調諧,以橫向和垂直於晶圓表面分佈。
在一些實施方案中,在單晶圓處理工具中執行離子植入。熱交換器使溫度控制和冷植入技術的發展能夠達到攝氏-100度。本揭露書中所示的產生高性能的物種是可清洗的離子,保持膜的純碳特性。
第1圖是根據本揭露書的各種實施方案而配置的電漿處理腔室100的示意性剖視圖。作為示例,第1圖中的電漿處理腔室100的實施方案是根據PECVD系統而描述的,但是任何其他電漿處理腔室可落入實施方案的範圍內,包括其他電漿沉積腔室或電漿蝕刻腔室。電漿處理腔室100包括壁102、底部104和腔室蓋124,它們一起包圍基座105和處理區域146。電漿處理腔室100進一步包括真空泵114、第一RF發生器151、第二RF發生器152、RF匹配器153、氣體源154、頂部RF電流調諧器155、底部RF電流調諧器157和系統控制器158,每個都在外部耦接到電漿處理腔室100,如圖所示。
壁102和底部104可包含導電材料,諸如鋁或不銹鋼。通過一個或多個壁102,可存在狹縫閥開口,狹縫閥開口被配置為促進將基板110***到電漿處理腔室100中並將基板110從電漿處理腔室100移除。配置成密封狹縫閥開口的狹縫閥可設置在電漿處理腔室100的內側或外側任一側。為清楚起見,第1圖中未顯示狹縫閥或狹縫閥開口。
真空泵114耦接到電漿處理腔室100且配置成調節其中的真空水平。如圖所示,閥116可耦接在電漿處理腔室100和真空泵114之間。真空泵114通過閥116在基板處理之前抽空電漿處理腔室100,並且在處理期間從電漿處理腔室100移除處理氣體。閥116可為可調節的,以促進調節電漿處理腔室100的抽空速率。通過閥116的抽空速率和來自氣體源154的進入氣體流速確定電漿處理腔室100中的腔室壓力和處理氣體駐留時間 。
氣體源154經由穿過腔室蓋124的管123而耦接到電漿處理腔室100。管123流體地耦接到在背板106和氣體分配噴頭128之間的氣室148,氣體分配噴頭128包括在腔室蓋124中。在操作期間,從氣體源154引入到電漿處理腔室100中的處理氣體填充氣室148,並接著穿過形成在氣體分配噴頭128中的氣體通道129,以均勻地進入處理區域146。在替代實施方案中,除了氣體分配噴頭128之外或代替氣體分配噴頭128,處理氣體可經由入口及/或噴嘴(未顯示)而引入到處理區域146中,入口及/或噴嘴附接到(多個)壁102。
基座105可包括用於在由電漿處理腔室100處理期間支撐基板的任何技術上可行的設備,諸如第1圖中的基板110。在一些實施方案中,基座105設置在軸112上,軸112配置成升高和降低基座105。在一個實施方案中,軸112和基座105可至少部分地由導電材料形成或含有導電材料,諸如鎢、銅、鉬、鋁或不銹鋼。替代地或另外地,基座105可至少部分地由陶瓷材料形成或含有陶瓷材料,諸如氧化鋁(Al2
O3
)、氮化鋁(AlN)、二氧化矽(SiO2
)及類似者。在電漿處理腔室100是電容耦合電漿腔室的實施方案中,基座105可配置成含有電極113。在這樣的實施方案中,金屬桿115或其他導體電耦合到電極113且配置成提供傳送到電漿處理腔室100的RF功率的接地路徑的一部分。即,金屬桿115使得傳送到電漿處理腔室100的RF功率能夠通過電極113並離開電漿處理腔室100以接地。
在一些實施方案中,電極113還配置成提供來自DC電源(未圖示)的電偏壓,以在電漿處理期間能夠將基板110靜電夾持到基座105上。在這樣的實施方案中,基座105通常包含主體,主體包括一種或多種陶瓷材料,諸如上述的陶瓷材料,或適用於靜電卡盤的任何其他陶瓷材料。在這樣的實施方案中,電極113可為網狀物,諸如RF網狀物,或由鉬(Mo)、鎢(W)或熱膨脹係數基本上類似於陶瓷材料或包括在基座105的主體中的材料的熱膨脹係數的其他材料所製成的多孔材料片。電極113和氣體分配噴頭128一起界定電漿形成在其中的處理區域146的邊界。例如,在處理期間,基座105和基板110可升高並定位在氣體分配噴頭128的下表面附近(如,在10-30mm內),以形成至少部分地封閉的處理區域146。
第一RF發生器151是射頻(RF)電源,配置成經由RF匹配器153向放電電極126提供第一RF頻率的高頻功率。類似地,第二RF發生器152是RF電源,配置成經由藉由RF匹配器153向放電電極126提供第二RF頻率的高頻功率。在一些實施方案中,第一RF發生器151包括能夠以高頻(HF)(例如,約13.56 MHz)產生RF電流的RF電源。替代地或另外地,第一RF發生器151包括能夠產生VHF功率的VHF發生器,諸如在約20MHz到200MHz或更高的頻率下的VHF功率。與之相比,第二RF發生器152包括能夠以所謂的低頻(LF)RF(例如,約350kHz)產生RF電流的RF電源。替代地或另外地,第二RF發生器152包括能夠以在約1kHz至約1MHz之間的頻率下產生RF功率的RF發生器。第一RF發生器151和第二RF發生器152配置成促進在放電電極126和基座105之間產生電漿。
放電電極126可包括處理氣體分配元件,諸如氣體分配噴頭128(如第1圖所示)及/或氣體注入噴嘴的陣列,處理氣體通過氣體注入噴嘴的陣列引入到處理區域146中。放電電極126,即氣體分配噴頭128,可基本上平行於基板110的表面取向,並且將電漿源功率電容耦合到處理區域146中,處理區域146設置在基板110和氣體分配噴頭128之間。
RF匹配器153可為任何技術上可行的阻抗匹配設備,其耦接在第一RF發生器151和電漿處理腔室100的供電電極(亦即,氣體分配噴頭128)之間。RF匹配器153也耦接在第二RF發生器152和電漿處理腔室100的供電電極之間。RF匹配器153配置成使負載阻抗(電漿處理腔室100)與源或驅動源(第一RF發生器151、第二RF發生器152)的內部阻抗相匹配,以實現從第一RF發生器151和第二RF發生器152到電漿處理腔室100的RF功率的最大傳輸。
形成壁102的一部分的是上隔離器107、調諧環108和下隔離器109。上隔離器107配置成電隔離調諧環108(由導電材料形成)與背板106,在一些實施方案中,背板106在操作期間以RF功率供能。因此,上隔離器107位於背板106和調諧環108之間,並防止調諧環108經由背板106而以RF功率供能。在一些實施方案中,上隔離器107配置為繞處理區域146同心地定位的陶瓷環或環形物(annulus)。類似地,下隔離器109配置為將調諧環108與壁102電隔離。壁102通常由導電材料形成,且因此可用作在處理期間傳送到電漿處理腔室100的一部分RF功率的接地路徑。因此,下隔離器109使得調諧環108能夠成為傳送到電漿處理腔室100的RF功率的不同接地路徑的一部分,除了壁102的接地路徑之外。在一些實施方案中,上隔離器107配置成陶瓷環,或配置成包括繞處理區域146同心地定位的陶瓷環。
調諧環108設置在上隔離器107和下隔離器109之間,由導電材料形成,且鄰近處理區域146設置。例如,在一些實施方案中,調諧環108由合適的金屬形成,諸如鋁、銅、鈦或不銹鋼。在一些實施方案中,調諧環108是在基板110的處理期間繞基座105和基板110同心地定位的金屬環或環形物(annulus)。此外,調諧環108經由導體156並經由頂部RF電流調諧器155而電耦合到接地,如圖所示。因此,調諧環108不是供電電極,且通常設置在處理區域146的外側和周圍。在一個示例中,調諧環108位於與基板110基本平行的平面中,且是用以在處理區域146中形成電漿的RF能量的接地路徑的一部分。結果,經由頂部RF電流調諧器155在氣體分配噴頭128和接地之間建立額外的RF接地路徑141。因此,藉由以特定頻率改變頂部RF電流調諧器155的阻抗,在那個特定頻率處的RF接地路徑141的阻抗改變,引起在那個頻率處耦合到調諧環108的RF場的變化。因此,處理區域146中的電漿的形狀可沿著+/- X和Y方向獨立地調製,用於與第一RF發生器151或第二RF發生器152相關聯的RF頻率。即,在處理區域146中形成的電漿的形狀、體積或均勻性可藉由使用(例如)調諧環108而在基板110的表面上,或使用電極113而垂直地在基板110和氣體分配噴頭128之間針對多個RF頻率獨立地調製。
系統控制器158配置成控制電漿處理腔室100的部件和功能,諸如真空泵114、第一RF發生器151、第二RF發生器152、RF匹配器153、氣體源154、頂部RF電流調諧器155和底部RF電流調諧器157。這樣,系統控制器158接收感測器輸入,如,來自頂部RF電流調諧器155和底部RF電流調諧器157的電壓-電流輸入,並傳輸用於電漿處理腔室100的操作的控制輸出。系統控制器158的功能可包括任何技術上可行的實現,包括經由軟體、硬體及/或韌體,且可在與電漿處理腔室100相關聯的多個單獨的控制器之間劃分。
不受理論束縛,但據信藉由在電漿增強沉積處理期間將不同頻率的RF功率輸送到電漿處理腔室的處理區域,可調節沉積膜的性質。例如,調節輸送到處理區域146的低頻RF電漿功率及/或頻率(亦即,以1kHz至1MHz的方式形成RF電漿)可有利於調節一些沉積膜性質(諸如膜應力),而調節輸送到處理區域146的高頻RF電漿功率及/或頻率(亦即,以1MHz至200MHz的方式形成RF電漿)可有利於調節其他沉積膜性質(諸如厚度均勻性)。根據本揭露書的各種實施方案,調諧設備能夠在多個RF頻率下獨立控制在電漿處理腔室100中的RF電流的流動。在一些實施方案中,在電漿處理腔室100中的多個位置處採用這種調諧設備,亦即,頂部RF電流調諧器155和底部RF電流調諧器157。
如上所述,頂部RF電流調諧器155電耦合到調諧環108並且端接到接地,從而為電漿處理腔室100提供可控的RF接地路徑141。類似地,底部RF電流調諧器157電耦合到金屬桿115並且端接到接地,從而為電漿處理腔室100提供不同的可控RF接地路徑142。如於此所述,頂部RF電流調諧器155和底部RF電流調諧器157每個都配置成控制多個RF頻率下的RF電流的流動到接地。因此,在調諧環108和金屬桿115之間處於第一RF頻率的RF電流的分佈可獨立於在調諧環108和金屬桿115之間處於第二RF頻率的RF電流的分佈而控制。
在電極113和放電電極126之間的處理區域146中形成電漿180。在電極113的底表面和基座105的頂表面之間的距離或「間隔」由「X」表示。
其他沉積腔室也可受益於本揭露書,且上面列出的參數可根據用以形成非晶碳層的特定沉積腔室而變化。例如,其他沉積腔室可具有更大或更小的體積,需要比可從應用材料公司獲得的沉積腔室所述的氣體流速更大或更小的氣體流速。在一個實施方案中,可使用可從加州聖克拉拉市的應用材料公司商購獲得的PRODUCER® XP PrecisionTM
處理系統沉積硼-碳膜。
摻雜劑或惰性物種摻入非晶碳膜中的原子百分比計算如下:(以cm-3
計的摻雜劑濃度除以預期用於特定密度的C膜的每cm-3
的C原子數。非晶碳膜可含有至少0.1、1或10原子百分比的摻雜劑或惰性物種。非晶碳膜可含有高達1、10或30原子百分比的摻雜劑或惰性物種。非晶碳膜可含有從約1至約30原子百分比的摻雜劑或惰性物種。非晶碳膜可含有從約10至約30原子百分比的摻雜劑或惰性物種。非晶碳膜可含有至少3、5或10原子百分比的氫。非晶碳膜可含有高達5、10或15原子百分比的氫。非晶碳膜可含有從約3至約15原子百分比的氫。
在摻雜劑是碳的一種實施方案中,碳摻入非晶碳膜中的原子百分比計算如下:((C/(H+C))%)。非晶碳膜可含有至少85、90或95原子百分比的碳。非晶碳膜可含有高達90、95或97原子百分比的碳。非晶碳膜可含有從約85至約97原子百分比的碳。非晶碳膜可含有從約90至約97原子百分比的碳。非晶碳膜可含有至少3、5或10原子百分比的氫。非晶碳膜可含有高達5、10或15原子百分比的氫。非晶碳膜可含有從約3至約15原子百分比的氫。
通常,以下的示例性沉積處理參數可用以於此所述的非晶碳膜沉積處理的PECVD部分。處理參數的範圍可從約攝氏100度到約攝氏700度(如,在約攝氏300度至約攝氏700度之間)的晶圓溫度。腔室壓力的範圍可從約1托到約20托(如,在約2托和約8托之間;或在約5托和約8托之間)的腔室壓力。含烴氣體的流速可為從約100sccm至約5,000sccm(如,在約100sccm和約2,000sccm之間;或在約160sccm和約500sccm之間)。稀釋氣體的流速的範圍可分別地從約0sccm至約5,000sccm(如,從約2,000sccm至約4,080sccm)。惰性氣體的流速的範圍可分別地從約0sccm至約10,000sccm(如,從約0sccm至約2,000sccm;從約200sccm至約2,000sccm)。RF功率可在1,000瓦至3,000瓦之間。在基板110的頂表面和氣體分配噴頭128之間的板間距可設定在約200密耳至約1,000密耳之間(如,在約200密耳和約600密耳之間;在約300密耳至約1,000密耳之間;或在約400密耳和約600密耳之間)。可沉積非晶碳膜以具有在約10Å和約50,000Å之間的厚度(如,在約300Å和約3,000Å之間;或在約500Å至約1,000Å之間)。上述處理參數為非晶碳膜提供了典型的沉積速率,其範圍為約100Å/分鐘至約5,000Å/分鐘(如,從約1,400Å/分鐘至約3,200Å/分鐘),且可在可從加州聖克拉拉市的應用材料公司獲得的沉積腔室中的300mm基板上實現。
在植入之前沉積的非晶碳膜可具有大於1.9的折射率(n
)(633nm),例如大約2.2(如,從約2.1至約2.5)。例如,沉積的非晶碳膜可具有小於1.0的k值(k(在633nm處))(如,從約0.6至約0.8)。沉積的非晶碳膜可具有從約50至約200GPa(如,從約60至約140GPa;或從約100至約140GPa)的楊氏模數(GPa)。沉積的非晶碳膜可具有從約10GPa至約22GPa(如,從約10GPa至約15GPa;或從約12GPa至約14GPa)的硬度(GPa)。沉積的非晶碳膜可具有從約-1300MPa至約0MPa(如,從約-1300MPa至約-250MPa;從約-1250MPa至約-1000MPa)的應力(MPa)。沉積的非晶碳膜可具有從約1.7g/cc至約1.87g/cc(如,從約1.74g/cc至約1.85g/cc)的密度(g/cc)。
在碳植入之後沉積的非晶碳膜可具有大於2.04的折射率(n
)(633nm),例如大約2.2(如,從約2.1至約2.2)。例如,沉積的非晶碳膜可具有小於1.0的k值(k(在633nm處))(如,從約0.5至約0.8;從約0.6至約0.7)。植入後沉積的非晶碳膜可具有從約70至約200GPa(如,從約120至約180GPa;或從約130至約170GPa)的楊氏模數(GPa)。植入後沉積的非晶碳膜可具有從約14GPa至約22GPa(如,從約15GPa至約20GPa;或從約16GPa至約19GPa)的硬度(GPa)。植入後沉積的非晶碳膜可具有從約-600MPa至約0MPa(如,從約-400MPa至約0Pa;從約-350MPa至約0MPa)的應力(MPa)。沉積的非晶碳膜可具有大於1.9g/cc,例如大約2.1g/cc(如,從約1.95g/cc至約2.1g/cc)的密度(g/cc)。
第2圖描繪了根據本揭露書的一個或多個實施方案的用於在設置在基板上的膜堆疊上形成非晶碳硬遮罩層的方法200的處理流程圖。第3A-3H圖描繪了基板結構的示意性剖視圖,顯示了根據方法200的硬遮罩形成順序。儘管下面參考可在用於三維半導體裝置的膜堆疊中製造類樓梯結構的膜堆疊上形成的硬遮罩層來描述方法200,方法200還可用以在其他裝置製造應用中得利。此外,還應該理解第2圖中描繪的操作可同時地執行及/或以與第2圖中所示的順序不同的順序執行。
方法200藉由將基板302定位到處理腔室(諸如第1圖中所示的電漿處理腔室100)中而在操作210處開始。基板302可為第1圖中所示的基板110。基板302可為在其上形成的膜堆疊300的一部分。
在一個實施方案中,基板110的表面(如第1圖所示)基本上是平面的。替代地,基板110可具有圖案化結構,例如,其中形成有溝槽、孔或通孔的表面。基板110還可具有基本平坦的表面,基本平坦的表面具有在其上或其中以目標高度形成的結構。雖然基板110被顯示為單個主體,但是應當理解基板110可含有在形成半導體裝置中使用的一種或多種材料,諸如金屬接點、溝槽隔離件、閘極、位線或任何其他互連特徵。基板110可包含用以製造半導體裝置的一個或多個金屬層、一個或多個介電材料、半導體材料及其組合。例如,取決於應用,基板110可包括氧化物材料、氮化物材料、多晶矽材料或類似者。在以記憶體應用為目標的一個實施方案中,基板110可包括矽基板材料、氧化物材料和氮化物材料,其中夾有或不夾有多晶矽。
在另一實施方案中,基板110可包括沉積在基板110的表面上的複數個交替的氧化物和氮化物材料(亦即,氧化物-氮化物-氧化物(ONO))(未顯示)。在各種實施方案中,基板110可包括複數個交替的氧化物和氮化物材料、一種或多種氧化物或氮化物材料、多晶矽或非晶矽材料、與非晶矽交替的氧化物、與多晶矽交替的氧化物、與摻雜矽交替的未摻雜矽、與摻雜多晶矽交替的未摻雜多晶矽或與摻雜的非晶矽交替的未摻雜的非晶矽。基板110可為在其上執行膜處理的任何基板或材料表面。例如,基板110可為諸如晶體矽、氧化矽、氮氧化矽、氮化矽、應變矽、矽鍺、鎢、氮化鈦、摻雜或未摻雜的多晶矽、摻雜或未摻雜的矽晶圓以及圖案化或非圖案化的晶圓、絕緣體上矽(SOI)、碳摻雜的氧化矽、氮化矽、摻雜矽、鍺、砷化鎵、玻璃、藍寶石、低k介電質以及它們的組合的材料。
膜堆疊300包括基板302和底層304。如於此所用,底層304包括設置在非晶碳硬遮罩下方的任何層。例如,非晶碳硬遮罩306可直接設置在底層304之上方,使得非晶碳硬遮罩306和底層304彼此實質接觸。在一個實施方案中,底層304包含單一層。在另一實施方案中,底層304包含介電質堆疊。
在操作220處,非晶碳硬遮罩306形成在設置在基板302上方的底層304上,如第3B圖所示。藉由在底層304上方毯式沉積處理而沉積非晶碳硬遮罩306。在一些實施方案中,根據第4圖的處理流程圖中描述的方法400而沉積非晶碳硬遮罩306。可將非晶碳硬遮罩306沉積到一定厚度,這對應於底層304的後續蝕刻要求。在一個示例中,非晶碳硬遮罩具有在約0.5μm和約1.5μm之間的厚度,諸如約1.0μm。
在操作230處,離子植入處理用摻雜劑摻雜非晶碳硬遮罩306,以形成摻雜有摻雜劑的摻雜非晶碳硬遮罩312,如第3C圖所示。可使用任何合適的摻雜技術。在一個實施方案中,採用電漿浸沒離子植入技術來植入摻雜劑或惰性物種。在一個實施方案中,採用束線植入技術來植入摻雜劑或惰性物種。在一個實施方案中,可採用共形摻雜技術(諸如電漿摻雜(PLAD)技術)來植入摻雜劑或惰性物種。
合適的離子物種可由各種前驅物材料產生,諸如含碳、硼、氮、矽、磷、氦、氬、氖、氪及氙材料。在一個實施方案中,摻雜劑或惰性物種選自碳、硼、氮、矽、磷、氬、氦、氖、氪、氙或其組合。含碳前驅物氣體的示例包括CH4
。在一個實施方案中,各種前驅物材料由前驅物材料的組合產生,包括(例如)CH4
/N2
、CH4
/He、N2
/He、CH4
/Ne、CH4
/Ar、CH4
/Ne、CH4
/Kr、CH4
/Xe 。
在示意圖中,離子310轟擊非晶碳硬遮罩306且通常穿透非晶碳硬遮罩306,以形成植入有摻雜劑或惰性物種的摻雜非晶碳硬遮罩312。離子310穿透非晶碳硬遮罩306到各種深度,這取決於離子的類型和尺寸以及用以賦能離子310的功率和偏壓。離子310的物種可被訂製以提供底層304的增加的蝕刻選擇性。因此,植入的物種可為適以增強非晶碳硬遮罩306的蝕刻選擇性的任何單體或分子離子。
可藉由束線或電漿植入工具執行離子植入處理。用以執行植入處理的示例性系統包括(例如)VARIAN VISISta® Trident系統、VIISta® 3000XP系統、VIISta® 900XP系統、VIISta® HCP系統和VIISta® PLAD系統,可從加州聖克拉拉市的應用材料公司獲得。儘管關於上述系統進行了描述,但是可預期來自其他製造商的系統也可用以執行離子植入處理。
在一個實施方案中,離子植入處理將摻雜劑或惰性物種植入非晶碳硬遮罩306中。摻雜劑或惰性物種選自碳、硼、氮、矽、磷、氬、氦、氖、氪、氙或其組合。在一個實施方案中,用以賦能摻雜劑的植入能量在約1keV和約60keV之間(如,在約5keV和約60keV之間;在約1keV和約15keV之間;在約10keV和約35keV之間;在約20keV和約30keV之間;或在約20keV和約25keV之間),取決於所用摻雜劑的類型、用作非晶碳硬遮罩306的材料的類型及目標的植入深度。在一種實施方案中,離子劑量(離子/ cm2
)在約5 x1013
離子/cm2
和約5x1017
離子/cm2
之間(如,在約1x1015
離子/cm2
和約3x1017
離子/cm2
之間;在約1x1014
離子/cm2
和約5x1016
離子/cm2
之間;在約1x1014
離子/cm2
和約2x1016
離子/cm2
之間;在約1x1015
離子/cm2
和約1x1016
離子/cm2
之間;在約5x1015
離子/cm2
和約1x1016
離子/cm2
之間),取決於所用摻雜劑的類型、用作非晶碳硬遮罩306的材料的類型和目標的植入深度。在使用PLAD植入技術的一種實施方案中,用以賦能摻雜劑或惰性物種的植入能量在約1kV和約60kV之間(如,在約5kV和約60kV之間;在約1kV和約15kV之間;在約10kV和約35kV之間;在約20kV和約30kV之間;或在約20kV和約25kV之間),離子劑量範圍在約5x1013
離子/cm2
和約5x1017
離子之間/cm2
之間(如,在約1x1015
離子/cm2
和約3x1017
離子/cm2
之間;在約1x1014
離子/cm2
和約5x1016
離子/cm2
之間;在約1x1014
離子/cm2
和約2x1016
離子/cm2
之間;在約1x1015
離子/cm2
和約1x1016
離子/cm2
之間;在約5x1015
離子/cm2
和約1x1016
離子/cm2
之間)。在在摻雜劑是氦的一種實施方案中,用以賦能摻雜劑的植入能量在約1kV至約15kV之間,離子劑量範圍在約1x1015
離子/cm2
和約3x1017
離子/cm2
之間。在一個實施方案中,目標溫度在約攝氏-100度和約攝氏500度之間(如,在約攝氏-100度和約攝氏200度之間;在約攝氏-100度和約攝氏0度之間;在約攝氏-100度和約攝氏50度之間;在約攝氏0度和約攝氏50度之間;或在約攝氏50度和約攝氏400度之間。)
通常,在非晶碳硬遮罩306打開之後,增加的非晶碳硬遮罩306的硬度提供了底層304中的高深寬比結構的線彎曲減少。據信植入的離子310從非晶碳硬遮罩306的懸空碳-氫鍵中提取殘留的氫原子,並在非晶碳硬遮罩306內形成碳化物結構。當與未摻雜的硬遮罩相比時,碳化物結構表現出增加的硬度。另外,據信植入的離子310佔據非晶碳硬遮罩306內存在的間隙空隙,這導致非晶碳硬遮罩306的密度增加。增加的密度進一步增加了非晶碳硬遮罩306的機械完整性。
在一個實施方案中,在離子植入處理之後,對膜堆疊300進行熱處理。合適的離子植入後熱處理技術包括UV處理、熱退火和雷射退火。摻雜非晶碳硬遮罩312的熱處理進一步將植入的離子310結合到摻雜非晶碳硬遮罩312的框架中。例如,植入的離子310可在摻雜非晶碳硬遮罩312內重新分佈,以形成更均勻的摻雜輪廓。據信熱處理可增加在摻雜非晶碳硬遮罩312的非晶碳與植入的離子310之間的相互作用和鍵合。植入的離子310的重新分佈和鍵合可用以進一步增加摻雜非晶碳硬遮罩312的硬度、密度和蝕刻選擇性。在一種實施方案中,退火處理在電漿處理腔室中執行,諸如電漿處理腔室100。在另一種實施方案中,退火處理在單獨的退火腔室中執行。
在操作240處,在摻雜有摻雜劑或惰性物種的摻雜非晶碳硬遮罩312之上形成圖案化的光阻劑層320,如第3D圖所示。可利用能量源(諸如光能)從光遮罩將特徵或圖案轉移到光阻劑層320。在一個實施方案中,光阻劑層320是聚合物材料,且圖案化處理藉由193奈米浸沒式光刻處理或其他類似的光刻處理來執行。類似地,雷射也可用以執行圖案化處理。
在操作250處,藉由(例如)電漿蝕刻處理打開摻雜非晶碳硬遮罩312,以形成圖案化的摻雜非晶碳硬遮罩322,如第3E圖所示。電漿蝕刻處理可在類似於關於第3C圖描述的腔室的腔室中執行。
在操作260處,移除光阻劑層320,如第3F圖所示。可藉由各種有利的光阻劑移除處理而移除光阻劑層320。
在操作270處,蝕刻底層304,如第3G圖所示。底層304蝕刻可在電漿處理腔室中進行,諸如關於第1B圖描述的腔室和系統。蝕刻劑(諸如碳氟化合物)移除底層304的曝露部分。蝕刻劑的活性物種基本上不與圖案化摻雜非晶碳硬遮罩322的材料(植入的離子310)反應。因此,蝕刻劑對於底層304的材料具有選擇性。蝕刻劑的合適示例包括CF4
、CHF3
、HBr、BCl3
和Cl2
等。可用惰性載氣提供蝕刻劑。
在操作280處,移除圖案化摻雜非晶碳硬遮罩322。可藉由任何有利的硬遮罩移除處理來移除圖案化摻雜非晶碳硬遮罩322。在一個示例中,利用氧電漿來移除圖案化摻雜非晶碳硬遮罩322。所得的膜堆疊300包括底層304,底層304具有形成在其中的特徵324(諸如高深寬比特徵)。膜堆疊300可接著經受進一步處理以形成功能半導體裝置。
第4圖是描繪根據於此描述的實施方案的用於沉積非晶碳膜的方法400的一個實施方案的處理流程圖。在一個實施方案中,方法400可用以沉積操作220的非晶碳膜。方法400在操作410處藉由在處理腔室的處理區域中提供基板而開始。處理腔室可為第1圖中所示的電漿處理腔室100。基板可為也在第1圖中顯示的基板110,或第3A-3H圖中所示的基板302。
在操作420處,將含烴氣體混合物流到處理區域146中。含烴氣體混合物可從氣體源154通過氣體分配噴頭128流到處理區域146中。氣體混合物可包括至少一個烴源及/或含碳源。氣體混合物可進一步包括惰性氣體、稀釋氣體、含氮氣體或其組合。烴源及/或含碳源可為任何液體或氣體,但優選的前驅物在室溫下將是蒸氣,以簡化材料計量、控制和輸送到腔室所需的硬體。
在一個實施方案中,烴源是氣態烴,諸如線性烴。在一個實施方案中,烴化合物具有通式Cx
Hy
,其中x具有在1和20之間的的範圍,y具有在1和20之間的範圍。在一個實施方案中,烴化合物為烷烴。合適的烴化合物包括(例如)甲烷(CH4
)、乙炔(C2
H2
)、乙烯(C2
H4
)、乙烷(C2
H6
)、丙烯(C3
H6
)和丁烯(C4
H8
)、環丁烷(C4
H8
)和甲基環丙烷(C4
H8
)。合適的丁烯包括1-丁烯、2-丁烯和異丁烯。其他合適的含碳氣體包括二氧化碳(CO2
)和四氟化碳(CF4
)。在一個示例中,由於形成更穩定的中間物種,C3
H6
是優選的,這允許更多的表面遷移率。
可將合適的稀釋氣體(諸如氦氣(He)、氬氣(Ar)、氫氣(H2
)、氮氣(N2
)、氨氣(NH3
)或其組合等)加入到氣體混合物中。 Ar、He和N2
用以控制非晶碳層的密度和沈積速率。在一些情況下,添加N2
及/或NH3
可用以控制非晶碳層的氫比例,如下所述。替代地,在沉積期間可不使用稀釋氣體。
含氮氣體可與含烴氣體混合物一起供應到電漿處理腔室100中。合適的含氮化合物包括(例如)吡啶、脂族胺、胺、腈、氨和類似化合物。
惰性氣體(諸如氬氣(Ar)及/或氦氣(He))可與含烴氣體混合物一起供應到電漿處理腔室100中。其他惰性氣體(諸如氮氣(N2
)和一氧化氮(NO))也可用以控制非晶碳層的密度和沈積速率。另外,可將各種其他處理氣體添加到氣體混合物,以改變非晶碳材料的性質。在一個實施方案中,處理氣體可為反應性氣體,諸如氫氣(H2
)、氨氣(NH3
)、氫氣(H2
)和氮氣(N2
)的混合物,或其組合。加入H2
及/或NH3
可用以控制沉積的非晶碳層的氫比例(如,碳與氫的比例)。存在於非晶碳膜中的氫比例提供對層性質(諸如反射率)的控制。
任選地,在操作430處,將處理區域中的壓力穩定於預定的RF接通延遲時間段。預定義的RF接通延遲時間段是固定的時間延遲,其定義為在操作430中在將含烴氣體混合物引入處理區域中和撞擊或產生電漿之間的時間段。可使用任何合適的固定時間延遲以達到目標條件。通常選擇RF接通延遲時間段的長度,使得含烴或含碳氣體混合物在處理區域中不開始熱分解或基本上熱分解。
在操作440處,在處理區域中產生RF電漿以沉積非晶碳膜,諸如非晶碳硬遮罩306。電漿可藉由電容或電感手段而形成,且可藉由將RF功率耦合到前驅物氣體混合物中而賦能。RF功率可為具有高頻分量和低頻分量的雙頻RF功率。RF功率通常以在約50W和約2,500W之間(如,在約2,000W至約2,500W之間)的功率水平施加,其可為全部高頻RF功率(例如在約13.56MHz的頻率下),或可為高頻功率和低頻功率(例如在約300kHz的頻率下)的混合。對於大多數應用而言,將電漿保持一定時間段以沉積具有厚度在約100Å至約5,000Å之間的非晶碳層。含烴氣體混合物的流動,達到非晶碳膜的目標厚度。操作440的處理可與操作420和操作430的處理同時執行、依序執行,或操作440的處理可與操作420和操作430的處理部分地重疊。
在於此所述的任何PECVD實施方案中,在沉積非晶碳膜期間,腔室、晶圓或兩者可維持在約攝氏200度至約攝氏700度之間的溫度(如,在約攝氏400度至約攝氏700度之間;或在約攝氏500度至約攝氏700度之間)。腔室壓力的範圍可從約1托到約10托的腔室壓力(如,在約2托和約8托之間;或在約4托和約8托之間)。在基座和氣體分配噴頭之間的距離(亦即,「間隔」)可設定在約200密耳至約1,000密耳之間(如,在約200密耳和約600密耳之間;在約300密耳至約1,000密耳之間;或在約400密耳和約600密耳之間)。
可沉積非晶碳膜以具有在約10Å和約50,000Å之間的厚度(如,在約300Å和約30,000Å之間;在約500Å至約1,000Å之間)
藉由執行任選的吹掃/抽空處理,可接著從處理區域移除任何過量的處理氣體和來自沉積調節層的副產物。
第5A圖描繪了與使用先前技術所形成非晶碳膜(510、512和514)相比,根據本揭露書的實施方案所形成的非晶碳膜(520、522和530、532)的面內畸變與膜應力(MPa)的關係圖500。應注意在碳摻雜劑植入之前描繪了根據本揭露書的實施方案所形成的非晶碳膜(520、522和530、532)。第5B圖描繪了第5A圖的非晶碳膜的楊氏模數(GPa)對膜應力(MPa)的關係圖550。如第5A-5B圖所示,根據於此所述的實施方案所形成的非晶碳膜(520、522和530、532)實現了儘管高應力(如,-1200MPa)但低的面內畸變和改進的模數。於此所述的後續碳摻雜劑植入處理將壓縮膜應力減小了大約4倍,同時將模數增加了大約1.4倍。
方法200和方法400對於在半導體裝置製造處理中的金屬化處理之前的前端產線處理(FEOL)中使用的處理是有用的。由於他們的高蝕刻選擇性,藉由方法200形成的非晶碳膜可在蝕刻處理期間用作硬遮罩層。合適的處理包括閘極製造應用、接點結構應用、淺溝槽隔離(STI)處理及類似者。在使用非晶碳膜用作蝕刻停止層或用作用於不同處理目的的不同膜的一些實施方案中,非晶碳膜的機械或光學性質也可調節以滿足特定的處理需要。
因此,根據於此所述的實施方案,藉由電漿沉積處理隨後進行碳植入處理來提供用於形成具有目標面內畸變和具低應力的楊氏模數的高蝕刻選擇性非晶碳膜的方法。方法有利地提供具有目標機械性質(諸如低應力和高楊氏模數)的非晶碳膜、碳-碳鍵合和氫結合的變化及高蝕刻選擇性。本揭露書的實施方案進一步提供了一種使用現存硬體而對產量或實現成本幾乎沒有影響的處理設計。本揭露書的一些實施方案提供了藉由調諧電漿沉積機制而將非晶碳膜的模數增加約2倍(如,從約64GPa增加到約138GPa)的一種獨特處理。通過離子植入實現關鍵膜性能的進一步改善,離子植入使非晶碳膜的楊氏模數增加30%(如,~180GPa),同時將壓縮應力降低約75%(如,從約-1200降低到約-300MPa)。此外,與當前一代的純碳硬遮罩膜相比,PECVD加上離子植入的組合提供了實現了顯著更低的面內畸變(<3奈米覆蓋誤差)的非晶碳膜。與當前生成的元素純的非晶碳硬遮罩膜相比,於此所述的所得膜已經證明蝕刻選擇性提高了大約30-50%,同時還符合先前的覆蓋要求。
當介紹本揭露書的元件或其示例性態樣或(多個)實施方案時,冠詞「一(a)」、「一(an)」、「該(the)」和「所述(said)」旨在表示存在一個或多個元件。
術語「包含(comprising)」、「包括(including)」和「具有(having)」旨在是包括性的,且意味著可能存在除所列元件之外的其他元件。
雖然前述內容涉及本揭露書的實施方案,但是可在不背離本揭露書的基本範圍的情況下設計本揭露書的其他和進一步的實施方案,且本揭露書的範圍由以下的申請專利範圍決定。
100‧‧‧電漿處理腔室
102‧‧‧壁
104‧‧‧底部
105‧‧‧基座
106‧‧‧背板
107‧‧‧上隔離器
108‧‧‧調諧環
109‧‧‧下隔離器
110‧‧‧基板
112‧‧‧軸
113‧‧‧電極
114‧‧‧真空泵
115‧‧‧金屬桿
116‧‧‧閥
123‧‧‧管
124‧‧‧腔室蓋
126‧‧‧放電電極
128‧‧‧氣體分配噴頭
129‧‧‧氣體通道
141‧‧‧RF接地路徑
142‧‧‧RF接地路徑
146‧‧‧處理區域
148‧‧‧氣室
151‧‧‧第一RF發生器
152‧‧‧第二RF發生器
153‧‧‧RF匹配器
154‧‧‧氣體源
155‧‧‧頂部RF電流調諧器
156‧‧‧導體
157‧‧‧底部RF電流調諧器
158‧‧‧系統控制器
180‧‧‧電漿
200‧‧‧方法
210‧‧‧操作
220‧‧‧操作
230‧‧‧操作
240‧‧‧操作
250‧‧‧操作
260‧‧‧操作
270‧‧‧操作
280‧‧‧操作
300‧‧‧膜堆疊
302‧‧‧基板
304‧‧‧底層
306‧‧‧非晶碳硬遮罩
310‧‧‧離子
312‧‧‧摻雜非晶碳硬遮罩
320‧‧‧光阻劑層
322‧‧‧圖案化摻雜非晶碳硬遮罩
324‧‧‧特徵
400‧‧‧方法
410‧‧‧操作
420‧‧‧操作
430‧‧‧操作
440‧‧‧操作
500‧‧‧關係圖
510‧‧‧非晶碳膜
512‧‧‧非晶碳膜
514‧‧‧非晶碳膜
520‧‧‧非晶碳膜
522‧‧‧非晶碳膜
530‧‧‧非晶碳膜
532‧‧‧非晶碳膜
550‧‧‧關係圖
因此,可詳細地理解本揭露書的上述特徵的方式,可藉由參考實施方案獲得對上面簡要概述的實施方案的更具體的描述,其中一些顯示在附隨的圖式中。然而,應注意附隨的圖式僅顯示了這份揭露書的典型實施方案,且因此不應視為限制本揭露書的範圍,因為本揭露書可允許其他等效的實施方案。
第1圖描繪了可用於實施於此描述的實施方案的設備的示意圖;
第2圖描繪了根據本揭露書的一個或多個實施方案的用於在設置在基板上的膜堆疊上形成非晶碳硬遮罩層的方法的處理流程圖;
第3A-3H圖描繪了基板結構的示意性剖視圖,顯示了根據本揭露書的一個或多個實施方案的硬遮罩形成順序;
第4圖描繪了根據本揭露書的一個或多個實施方案的用於在設置在基板上的膜堆疊上形成非晶碳硬遮罩層的方法的處理流程圖;
第5A圖描繪了與使用先前技術形成的非晶碳膜相比,根據本揭露書的實施方案形成的非晶碳膜的面內應變與膜應力(MPa)的關係圖;及
第5B圖描繪了第5A圖的非晶碳膜的楊氏模數(GPa)與膜應力(MPa)的關係圖。
為促進理解,在可能的情況下,使用相同的元件符號來表示圖式中共有的相同元件。可預期一個實施方案的元件和特徵可有利地併入其他實施方案中而無需進一步敘述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
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Claims (20)
- 一種形成一非晶碳膜的方法,包含以下步驟: 在一第一處理區域中的位於一基座上的一底層上沉積一非晶碳膜;藉由在一第二處理區域中將一摻雜劑或惰性物種植入到該非晶碳膜中而形成一摻雜的非晶碳膜,其中該摻雜劑或惰性物種選自碳、硼、氮、矽、磷、氬、氦、氖、氪、氙或其組合;圖案化該摻雜的非晶碳膜;及蝕刻該底層。
- 如請求項1所述之方法,其中該底層包含一單一層或一介電堆疊。
- 如請求項1所述之方法,其中在該底層上沉積該非晶碳膜包含以下步驟: 使一含烴氣體混合物流到該第一處理區域中;及在該第一處理區域中產生一RF電漿,以在該底層上形成該非晶碳膜。
- 如請求項3所述之方法,其中在該第一處理區域中的一氣體分配噴頭與該基座之間的一距離在約200密耳和約1,000密耳之間。
- 如請求項4所述之方法,其中該第一處理區域內的一壓力在約4托和約8托之間。
- 如請求項1所述之方法,其中用以賦能該摻雜劑或惰性物種的一植入能量在約5keV和約60keV之間。
- 如請求項6所述之方法,其中一離子劑量在約5x1013 離子/cm2 和約5x1016 離子/cm2 之間。
- 如請求項6所述之方法,其中在植入該摻雜劑或惰性物種期間的一目標溫度在約攝氏-100度和約攝氏500度之間。
- 一種形成一非晶碳膜的方法,包含以下步驟: 在一第一處理區域中的位於一基座上的一底層上沉積一非晶碳膜;藉由在一第二處理區域中將一摻雜劑或惰性物種植入到該非晶碳膜中來形成一摻雜的非晶碳膜,其中該摻雜劑或惰性物種選自碳、硼、氮、矽、磷、氬、氦、氖、氪、氙或其組合;圖案化該摻雜的非晶碳膜;及蝕刻該底層,其中該摻雜的非晶碳膜在633nm處具有從約2.1至約2.2的一折射率。
- 如請求項9所述之方法,其中該摻雜的非晶碳膜在633nm處的一k值小於1.0。
- 如請求項9所述之方法,其中該摻雜的非晶碳膜具有從約70至約200GPa的一楊氏模數(GPa)。
- 如請求項11所述之方法,其中該摻雜的非晶碳膜具有從約14GPa至約22GPa的一硬度(GPa)。
- 如請求項12所述之方法,其中該摻雜的非晶碳膜具有從約-600MPa至約0MPa的一應力(MPa)。
- 如請求項13所述之方法,其中該摻雜的非晶碳膜具有從約1.95g/cc至約2.1g/cc的一密度(g/cc)。
- 如請求項14所述之方法,其中該摻雜的非晶碳膜具有在約10Å和約50,000Å之間的一厚度。
- 一種硬遮罩層,包含藉由一電漿增強化學氣相沉積處理隨後進行一摻雜劑或惰性物種植入處理而形成的一非晶碳膜,其中該摻雜劑選自碳、硼、氮、矽、磷、氬、氦、氖、氪、氙或其組合且該非晶碳膜在用於半導體應用的一蝕刻處理中用作一硬遮罩層。
- 如請求項16所述之硬遮罩層,其中該非晶碳膜在633nm處具有從約2.1至約2.2的一折射率。
- 如請求項17所述之硬遮罩層,其中該非晶碳膜在633nm處具有小於1.0的一k值。
- 如請求項16所述之硬遮罩層,其中該非晶碳膜具有從約70至約200GPa的一楊氏模數(GPa)。
- 如請求項19所述之硬遮罩層,其中該非晶碳膜具有: 從約14GPa至約22GPa的一硬度(GPa);從約-600MPa至約0MPa的一應力(MPa);從約1.95g/cc至約2.1g/cc的一密度(g/cc);及在約10Å和約50,000Å之間的一厚度。
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US20190172714A1 (en) | 2019-06-06 |
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