TW201927469A - Substrate processing system, substrate processing method, program, and computer storage medium - Google Patents
Substrate processing system, substrate processing method, program, and computer storage medium Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 123
- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 238000003672 processing method Methods 0.000 title claims description 13
- 230000002093 peripheral effect Effects 0.000 claims abstract description 210
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 22
- 238000005498 polishing Methods 0.000 claims description 52
- 239000004575 stone Substances 0.000 claims description 27
- 239000006061 abrasive grain Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 22
- 230000007246 mechanism Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 208
- 238000012546 transfer Methods 0.000 description 59
- 238000004140 cleaning Methods 0.000 description 36
- 238000009966 trimming Methods 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
本發明係有關於用以處理基板之基板處理系統、使用該基板處理系統之基板處理方法、程式及電腦記錄媒體。The present invention relates to a substrate processing system for processing a substrate, a substrate processing method, a program, and a computer recording medium using the substrate processing system.
近年，在半導體元件之製造製程中，對表面形成有複數之電子電路等元件之半導體晶圓(以下稱為晶圓)進行將該晶圓之背面研磨及拋光而使晶圓薄化之技術。再者，當將此薄化之晶圓直接搬送或進行後續之處理時，有晶圓產生翹曲或破裂之虞。因此，為補強晶圓，進行例如將晶圓貼附於支撐基板之技術。In recent years, in a semiconductor device manufacturing process, a semiconductor wafer (hereinafter referred to as a wafer) having a plurality of electronic circuits and other elements formed on its surface is subjected to a technique of grinding and polishing the back surface of the wafer to thin the wafer. Furthermore, when this thin wafer is directly transported or subjected to subsequent processing, the wafer may be warped or cracked. Therefore, in order to reinforce the wafer, for example, a technique of attaching the wafer to a support substrate is performed.
然而，雖然通常晶圓之周緣部進行了去角，但如上述，當將晶圓進行研磨及拋光處理時，晶圓之周緣部形成尖銳之形狀。如此一來，在晶圓之周緣部產生碎裂，有晶圓受到損傷之虞。是故，於研磨處理前，預先進行削除晶圓之周緣部的所謂修邊。However, although the peripheral edge portion of the wafer is generally chamfered, as described above, when the wafer is subjected to grinding and polishing, the peripheral edge portion of the wafer has a sharp shape. As a result, chipping may occur at the peripheral portion of the wafer, and the wafer may be damaged. Therefore, before the polishing process, a so-called trimming of the peripheral portion of the wafer is performed in advance.
於例如專利文獻1揭示有縱軸型平面研磨裝置作為進行修邊之裝置。使用此縱軸型平面研磨裝置，研磨晶圓之周緣部時，首先，將晶圓固定於台，使台繞與鉛直軸平行之軸旋轉。接著，使心軸旋轉，對杯形磨輪施予旋轉後，使心軸於鉛直方向移動，藉此，使杯形磨輪之研磨面抵接晶圓，而研磨晶圓之周緣部。
[先前技術文獻]
[專利文獻]For example, Patent Document 1 discloses a vertical-axis-type plane polishing device as a device for trimming. When using this vertical axis type planar polishing device, when polishing the peripheral edge portion of a wafer, first, the wafer is fixed to a stage, and the stage is rotated about an axis parallel to the vertical axis. Next, the mandrel is rotated and the cup-shaped grinding wheel is rotated, and then the mandrel is moved in the vertical direction, so that the polishing surface of the cup-shaped grinding wheel abuts the wafer, and the peripheral portion of the wafer is polished.
[Prior technical literature]
[Patent Literature]
[專利文獻1]日本專利公開公報平9-216152號[Patent Document 1] Japanese Patent Laid-Open Publication No. 9-216152
[發明欲解決之問題][Invention to solve the problem]
如上述，在專利文獻1所記載之平面研磨裝置中，使用杯形磨輪，研磨晶圓之周緣部。在此，欲使例如周緣部之研磨速度大時，需使杯形磨輪之研磨粒的粒徑大。然而，此時，有因研磨周緣部而露出之晶圓表面(以下稱為露出面)變粗糙，而無法滿足預定品質之情形。As described above, in the planar polishing apparatus described in Patent Document 1, a cup-shaped grinding wheel is used to polish the peripheral edge portion of the wafer. Here, if it is desired to increase the polishing speed of the peripheral portion, for example, the particle size of the abrasive grains of the cup-shaped grinding wheel needs to be large. However, at this time, the surface of the wafer (hereinafter referred to as an exposed surface) exposed by polishing the peripheral portion may become rough, and the predetermined quality may not be satisfied.
另一方面，當欲使例如晶圓之露出面的表面性質提高時，需使杯形磨輪之研磨粒的粒徑小。然而，此時，周緣部之研磨耗時，而無法使晶圓處理全體之生產量提高。因而，如以往使用杯形磨輪之修邊有改善之餘地。On the other hand, when it is desired to improve the surface properties of the exposed surface of the wafer, for example, the particle size of the abrasive grains of the cup-shaped grinding wheel needs to be made small. However, at this time, the polishing of the peripheral portion takes time, and the throughput of the entire wafer processing cannot be increased. Therefore, there is room for improvement in the trimming of cup-shaped grinding wheels as in the past.
本發明鑑於上述情況而作成，其目的在於將基板之周緣部研磨去除時，縮短去除周緣部所耗費之時間，並且使因研磨周緣部而露出之基板表面的表面性質提高。
[解決問題之手段]The present invention has been made in view of the above circumstances, and an object thereof is to shorten the time taken to remove a peripheral portion when polishing and removing the peripheral portion of the substrate, and to improve the surface properties of the surface of the substrate exposed by polishing the peripheral portion.
[Means for solving problems]
解決上述問題之本發明一態樣係用以處理基板之基板處理系統，其包含有第1周緣去除部及第2周緣去除部，該第1周緣去除部具有抵接該基板之周緣部的第1磨石，而將該周緣部研磨去除至第1深度；該第2周緣去除部具有抵接該基板之周緣部的第2磨石，而在以該第1周緣去除部去除該周緣部後，進一步將該周緣部研磨去除至比該第1深度深之第2深度；該第2磨石具有之研磨粒的粒度小於該第1磨石所具有之研磨粒的粒度。One aspect of the present invention that solves the above problems is a substrate processing system for processing a substrate, which includes a first peripheral edge removal portion and a second peripheral edge removal portion. The first peripheral edge removal portion has a first peripheral edge portion abutting the peripheral edge portion of the substrate. 1 grinding stone, and grinding and removing the peripheral edge portion to a first depth; the second peripheral edge removing portion has a second grinding stone abutting the peripheral edge portion of the substrate, and after removing the peripheral edge portion by the first peripheral edge removing portion; Further grinding and removing the peripheral edge portion to a second depth deeper than the first depth; the grain size of the abrasive grains of the second millstone is smaller than the grain size of the abrasive grains of the first millstone.
另一觀點之本發明一態樣係用以處理基板之基板處理方法，其包含有第1周緣去除製程及第2周緣去除製程，該第1周緣去除製程使第1磨石抵接該基板之周緣部，而將該周緣部研磨去除至第1深度；該第2周緣去除製程於該第1周緣去除製程之後，使第2磨石抵接該基板之周緣部，而將該周緣部研磨去除至比該第1深度深之第2深度；該第2磨石具有之研磨粒的粒度小於該第1磨石所具有之研磨粒的粒度。Another aspect of the present invention is a substrate processing method for processing a substrate, which includes a first peripheral edge removal process and a second peripheral edge removal process. The first peripheral edge removal process causes the first grinding stone to abut the substrate. The peripheral edge portion, and the peripheral edge portion is ground and removed to a first depth; the second peripheral edge removal process is followed by the first peripheral edge removal process, the second grinding stone is brought into contact with the peripheral edge portion of the substrate, and the peripheral edge portion is ground and removed; To a second depth deeper than the first depth; the grain size of the abrasive grains of the second millstone is smaller than the grain size of the abrasive grains of the first millstone.
根據又另一觀點之本發明一態樣，提供一種程式，其係在控制基板處理系統之控制部的電腦上運作而使該基板處理系統執行該基板處理方法。According to yet another aspect of the present invention, a program is provided that operates on a computer that controls a control section of a substrate processing system to cause the substrate processing system to execute the substrate processing method.
根據再另一觀點之本發明一態樣，提供一種儲存有該程式之可讀取的電腦記錄媒體。
[發明之功效]According to another aspect of the present invention, a readable computer recording medium storing the program is provided.
[Effect of the invention]
根據本發明，藉在將基板之周緣部研磨去除時，使用第1磨石，可縮短去除周緣部所耗費之時間，而使基板處理之生產量提高。又，還可藉使用第2磨石，使因研磨周緣部而露出之基板表面的表面性質提高。According to the present invention, when the peripheral portion of the substrate is polished and removed, the first grinding stone can be used to reduce the time taken to remove the peripheral portion and increase the throughput of substrate processing. In addition, by using a second grinding stone, the surface properties of the substrate surface exposed by polishing the peripheral portion can be improved.
[用以實施發明之形態][Forms for Implementing Invention]
以下，就本發明之實施形態，一面參照圖式，一面說明。此外，在本說明書及圖式中，藉在實質上具有同一功能結構之要件附上同一符號而省略重複說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in this specification and drawings, elements having substantially the same functional structure are denoted by the same reference numerals, and redundant descriptions are omitted.
＜基板處理系統＞
首先，就本實施形態之基板處理系統的結構作說明。圖1係示意顯示基板處理系統1之結構的概略之平面圖。此外，在以下，為使位置關係明確，而規定相互垂直相交之X軸方向、Y軸方向及Z軸方向，令Z軸正方向為鉛直向上方向。＜ Substrate processing system ＞
First, the configuration of the substrate processing system according to this embodiment will be described. FIG. 1 is a plan view schematically showing the configuration of the substrate processing system 1. In the following, in order to clarify the positional relationship, the X-axis direction, Y-axis direction, and Z-axis direction that intersect each other perpendicularly are defined, and the positive direction of the Z-axis is the vertical upward direction.
在本實施形態之基板處理系統1中，將如圖2所示作為基板之被處理晶圓W與支撐晶圓S藉由例如接著劑G接合之疊合晶圓T進行處理，而使被處理晶圓W薄化。以下，在被處理晶圓W，將加工(研磨)之面(接著接著劑G之面的反面)稱為「加工面W1」，將加工面W1之反面稱為「非加工面W2」。又，在支撐晶圓S，將藉由接著劑G與被處理晶圓W接合之面稱為「接合面S1」，將接合面S1之反面稱為「非接合面S2」。此外，在本實施形態中，被處理晶圓W與支撐晶圓S藉由接著劑G接合，接合方法並不限於此。In the substrate processing system 1 of the present embodiment, the processed wafer W and the support wafer S, which are substrates as shown in FIG. Wafer W is thin. Hereinafter, in the wafer W to be processed, the processed (polished) surface (the reverse surface of the surface following the adhesive G) is referred to as "processed surface W1", and the opposite surface of the processed surface W1 is referred to as "non-processed surface W2". In the support wafer S, the surface to be bonded to the wafer W to be processed by the adhesive G is referred to as a "joint surface S1", and the opposite surface of the joint surface S1 is referred to as a "non-joint surface S2". In addition, in this embodiment, the processing wafer W and the support wafer S are bonded by the adhesive G, and the bonding method is not limited to this.
被處理晶圓W係例如矽晶圓或化合物半導體晶圓等半導體晶圓，於非加工面W2形成有複數之元件。此外，被處理晶圓W之周緣部為去角，周緣部之截面的厚度往前端縮小。The processed wafer W is a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer, and a plurality of elements are formed on the non-processed surface W2. In addition, the peripheral edge portion of the wafer W to be processed is chamfered, and the thickness of the cross section of the peripheral edge portion is reduced toward the front end.
支撐晶圓S係支撐被處理晶圓W之晶圓。又，支撐晶圓S具有將被處理晶圓W之非加工面W2的元件與接著劑G一同保護之保護材的功能。此外，在本實施形態中，就使用晶圓作為支撐基板之情形作說明，亦可使用例如玻璃基板等其他基板。The support wafer S is a wafer that supports the wafer W to be processed. The support wafer S has a function of a protective material that protects the elements on the non-processed surface W2 of the wafer W to be processed together with the adhesive G. In addition, in this embodiment, a case where a wafer is used as a support substrate is described, and other substrates such as a glass substrate may be used.
如圖1所示，基板處理系統1具有下述結構，前述結構係在與例如外部之間搬入搬出可收容複數之疊合晶圓T的晶匣C之搬入搬出站2與具有對疊合晶圓T施行預定處理之各種處理裝置的處理站3連接。As shown in FIG. 1, the substrate processing system 1 has a structure in which the structure for carrying in and out of a cassette C that can accommodate a plurality of stacked wafers T from and to the outside, for example, The processing stations 3 of various processing apparatuses that perform predetermined processing are connected to the circle T.
於搬入搬出站2設有晶匣載置台10。在圖示之例中，在晶匣載置台10，複數、例如4個晶匣C於X軸方向自由載置成一列。A cassette mounting table 10 is provided at the loading / unloading station 2. In the example shown in the figure, a plurality of, for example, four cassettes C are freely placed in a row on the cassette mounting table 10 in the X-axis direction.
在搬入搬出站2，晶圓搬送區域20與晶匣載置台10相鄰而設。於晶圓搬送區域20設有在於X軸方向延伸之搬送路徑21上移動自如的晶圓搬送裝置22。晶圓搬送裝置22具有將疊合晶圓T保持搬送之例如2條搬送臂23、23。各搬送臂23構造成於水平方向、鉛直方向、繞水平軸及繞鉛直軸移動自如。此外，搬送臂23之結構不限本實施形態，可採用任意結構。In the loading / unloading station 2, a wafer transfer region 20 is provided adjacent to the cassette mounting table 10. A wafer transfer device 22 is provided in the wafer transfer area 20 to move freely on a transfer path 21 extending in the X-axis direction. The wafer transfer device 22 includes, for example, two transfer arms 23 and 23 that hold and transfer the stacked wafer T. Each of the transfer arms 23 is configured to move freely in a horizontal direction, a vertical direction, about a horizontal axis, and about a vertical axis. In addition, the structure of the transfer arm 23 is not limited to this embodiment, and any structure can be adopted.
於處理站3設有晶圓搬送區域30。於晶圓搬送區域30設有在於Y軸方向延伸之搬送路徑31上移動自如的晶圓搬送裝置32。晶圓搬送裝置32具有將疊合晶圓T保持搬送之例如2條搬送臂33、33。各搬送臂33構造成於水平方向、鉛直方向、繞水平軸及繞鉛直軸移動自如。此外，搬送臂33之結構不限本實施形態，可採用任意結構。A wafer transfer area 30 is provided in the processing station 3. A wafer transfer device 32 is provided in the wafer transfer area 30 so as to be freely movable on a transfer path 31 extending in the Y-axis direction. The wafer transfer device 32 includes, for example, two transfer arms 33 and 33 that hold and transfer the stacked wafer T. Each of the transfer arms 33 is configured to move freely in a horizontal direction, a vertical direction, about a horizontal axis, and about a vertical axis. In addition, the structure of the transfer arm 33 is not limited to this embodiment, and any structure can be adopted.
在處理站3，於晶圓搬送區域30之周圍設有加工裝置40、CMP裝置41(CMP：Chemical Mechanical Polishing，化學機械拋光)、第1周緣去除裝置42、第2周緣去除裝置43、第1清洗裝置44、及第2清洗裝置45。在晶圓搬送區域30之X軸負方向側，加工裝置40與CMP裝置41從Y軸正方向往負方向排列配置。在晶圓搬送區域30之X軸正方向側，第1周緣去除裝置42與第2周緣去除裝置43從Y軸正方向往負方向排列配置。在晶圓搬區域30之上方且為Y軸負方向側，第1清洗裝置44與第2清洗裝置45從Y軸正方向往負方向排列配置。此外，於第2清洗裝置45之下方設有用以在晶圓搬送裝置22與晶圓搬送裝置32之間交接疊合晶圓T之過渡裝置(圖中未示)。In the processing station 3, a processing device 40, a CMP device 41 (CMP: Chemical Mechanical Polishing), a first peripheral edge removal device 42, a second peripheral edge removal device 43, and a first CMP device are provided around the wafer transfer area 30. The cleaning device 44 and the second cleaning device 45. On the negative X-axis side of the wafer transfer region 30, the processing device 40 and the CMP device 41 are arranged in a row from the positive Y-axis direction to the negative direction. On the X-axis positive direction side of the wafer transfer region 30, the first peripheral edge removing device 42 and the second peripheral edge removing device 43 are arranged in a line from the positive direction of the Y-axis to the negative direction. Above the wafer transfer area 30 and on the negative Y-axis side, the first cleaning device 44 and the second cleaning device 45 are arranged in a line from the positive Y-axis direction to the negative direction. In addition, a transition device (not shown) is provided below the second cleaning device 45 to transfer and overlap the wafer T between the wafer transfer device 22 and the wafer transfer device 32.
在以上之基板處理系統1設有控制部50。控制部50係例如電腦，具有程式儲存部(圖中未示)。於程式儲存部儲存有控制基板處理系統1之疊合晶圓T的處理之程式。又，於程式儲存部亦儲存有用以控制上述各種處理裝置及搬送裝置等之驅動系統的動作而使基板處理系統1之後述晶圓處理實現的程式。此外，該程式可記錄於例如電腦可讀取之硬碟(HD)、軟碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等可為電腦讀取之記錄媒體H，亦可從該記錄媒體H安裝於控制部50。The above-mentioned substrate processing system 1 is provided with a control unit 50. The control unit 50 is, for example, a computer, and has a program storage unit (not shown). A program for controlling the processing of the stacked wafer T of the substrate processing system 1 is stored in the program storage section. The program storage unit also stores programs for realizing the wafer processing described later on the substrate processing system 1 to control the operations of the drive systems of the various processing apparatuses and transport apparatuses described above. In addition, the program can be recorded on a computer-readable recording medium H, such as a hard disk (HD), a flexible disk (FD), a compact disc (CD), a magneto-optical disc (MO), a memory card, etc. The recording medium H can be mounted on the control unit 50.
(加工裝置)
如圖3所示，加工裝置40具有旋轉台100、搬送單元110、校準單元120、清洗單元130、粗研磨單元140、中研磨單元150及精研磨單元160。(Processing device)
As shown in FIG. 3, the processing device 40 includes a rotary table 100, a conveying unit 110, a calibration unit 120, a cleaning unit 130, a rough grinding unit 140, a middle grinding unit 150, and a fine grinding unit 160.
旋轉台100藉旋轉機構(圖中未示)構造成旋轉自如。於旋轉台100上設有吸附保持疊合晶圓T之4個吸盤101。吸盤101在與旋轉台100相同之圓周上均等、即每隔90度配置。4個吸盤101藉旋轉台100旋轉，而可移動至交接位置A0及加工位置A1~A3。The rotary table 100 is rotatably configured by a rotation mechanism (not shown). Four turntables 101 are provided on the turntable 100 for holding and holding the stacked wafer T. The suction cups 101 are arranged on the same circumference as the turntable 100, that is, every 90 degrees. The four suction cups 101 can be moved to the transfer position A0 and the processing positions A1 to A3 by rotating the rotary table 100.
在本實施形態中，交接位置A0係旋轉台100之X軸正方向側且為Y軸負方向側之位置，於交接位置A0之Y軸負方向側配置校準單元120與清洗單元130。第1加工位置A1係旋轉台100之X軸正方向側且為Y軸正方向側之位置，配置粗研磨單元140。第2加工位置A2係旋轉台100之X軸負方向側且為Y軸正方向側之位置，配置中研磨單元150。第3加工位置A3係旋轉台100之X軸負方向側且為Y軸負方向側之位置，配置精研磨單元160。In this embodiment, the transfer position A0 is a position on the positive X-axis side and a negative Y-axis side of the turntable 100, and a calibration unit 120 and a cleaning unit 130 are arranged on the negative Y-axis side of the transfer position A0. The first processing position A1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the turntable 100, and a rough grinding unit 140 is arranged. The second processing position A2 is a position on the negative side of the X axis of the turntable 100 and on the positive side of the Y axis, and the middle grinding unit 150 is arranged. The third processing position A3 is a position on the negative side of the X axis and the negative side of the Y axis of the turntable 100, and a fine grinding unit 160 is arranged.
吸盤101保持於吸盤基座102。吸盤101及吸盤基座102以旋轉機構(圖中未示)構造成可旋轉。The chuck 101 is held on a chuck base 102. The chuck 101 and the chuck base 102 are configured to be rotatable by a rotation mechanism (not shown).
搬送單元110係具有複數個、例如3個臂111~113之多關節型機器人。3個臂111~113以關節部(圖中未示)連接，藉該等關節部，第1臂111與第2臂112分別構造成以基端部為中心旋繞自如。於3個臂111~113中前端之第1臂111安裝有吸附保持疊合晶圓T之搬送墊114。又，3個臂111~113中基端之第3臂113安裝於使臂111~113於鉛直方向移動之鉛直移動機構115。再者，具有此結構之搬送單元110可對交接位置A0、校準單元120及清淨單元130搬送疊合晶圓T。The transfer unit 110 is a multi-joint robot having a plurality of, for example, three arms 111 to 113. The three arms 111 to 113 are connected by joints (not shown). By virtue of these joints, the first arm 111 and the second arm 112 are respectively configured to freely rotate around the base end. The first arm 111 at the front end of the three arms 111 to 113 is provided with a transfer pad 114 that sucks and holds the stacked wafer T. In addition, the third arm 113 at the base end of the three arms 111 to 113 is attached to a vertical moving mechanism 115 that moves the arms 111 to 113 in the vertical direction. Furthermore, the transfer unit 110 having this structure can transfer the stacked wafer T to the transfer position A0, the calibration unit 120, and the cleaning unit 130.
在校準單元120，調節研磨處理前之疊合晶圓T的水平方向之方位。舉例而言，藉一面使保持於旋轉吸盤(圖中未示)之疊合晶圓T旋轉，一面以檢測部(圖中未示)檢測疊合晶圓T之標記部的位置，而調節該標記部之位置來調節疊合晶圓T之水平方向的方位。In the calibration unit 120, the horizontal orientation of the stacked wafer T before the polishing process is adjusted. For example, by rotating the stacked wafer T held on a rotating chuck (not shown), the detection portion (not shown) detects the position of the mark portion of the stacked wafer T and adjusts the position. The position of the marking portion adjusts the horizontal orientation of the stacked wafer T.
在清洗單元130，清洗呈研磨處理後之疊合晶圓T保持於搬送墊114之狀態的支撐晶圓S之非接合面S2，並且清洗搬送墊114。In the cleaning unit 130, the non-joint surface S2 of the supporting wafer S in a state where the stacked wafer T after being polished is held on the transfer pad 114 is cleaned, and the transfer pad 114 is cleaned.
在粗研磨單元140，粗研磨被處理晶圓W之加工面W1。粗研磨單元140具有具呈環狀且旋轉自如之粗研磨磨石(圖中未示)的粗研磨部141。又，粗研磨部141構造成可沿著支柱142於鉛直方向及水平方向移動自如。再者，藉在使保持於吸盤101之被處理晶圓W抵接粗研磨磨石的狀態下，使吸盤101與粗研磨磨石各自旋轉，而粗研磨被處理晶圓W之加工面W1。In the rough polishing unit 140, the processed surface W1 of the wafer W to be processed is roughly polished. The rough grinding unit 140 has a rough grinding portion 141 having a ring-shaped and rotatable rough grinding grindstone (not shown). In addition, the rough polishing section 141 is structured to be movable in the vertical direction and the horizontal direction along the pillar 142. In addition, the processing surface W1 of the processed wafer W is roughly ground by rotating the chuck 101 and the rough grinding stone while the wafer to be processed W held on the chuck 101 abuts the rough grinding stone.
在中研磨單元150，中研磨被處理晶圓W之加工面W1。中研磨單元150具有具呈環狀且旋轉自如之中研磨磨石(圖中未示)的中研磨部151。又，中研磨部151構造成可沿著支柱152於鉛直方向及水平方向移動。此外，中研磨磨石之研磨粒的粒度小於粗研磨磨石之研磨粒的粒度。再者，藉在使保持於吸盤101之被處理晶圓W的加工面W1抵接中研磨磨石之狀態下，使吸盤101與中研磨磨石分別旋轉，而中研磨加工面W1。In the intermediate polishing unit 150, the processing surface W1 of the wafer W to be processed is intermediate polished. The middle grinding unit 150 has a middle grinding portion 151 having a ring shape and a rotatable middle grinding stone (not shown). In addition, the intermediate polishing portion 151 is configured to be movable along the pillar 152 in the vertical direction and the horizontal direction. In addition, the particle size of the abrasive grains of the medium grinding stone is smaller than the particle size of the abrasive grains of the coarse grinding stone. In addition, in a state where the processing surface W1 of the wafer W to be processed held on the chuck 101 abuts against the intermediate polishing grindstone, the chuck 101 and the intermediate polishing grindstone are respectively rotated to rotate the intermediate polishing processing surface W1.
在精研磨部160，精研磨被處理晶圓W之加工面W1。精研磨單元160具有具呈環狀且旋轉自如之精研磨磨石(圖中未示)的精研磨部161。又，精研磨部161構造成可沿著支柱162於鉛直方向及水平方向移動。此外，精研磨磨石之研磨粒的粒度小於中研磨磨石之研磨粒的粒度。再者，藉在使保持於吸盤101之被處理晶圓W的加工面W1抵接精研磨磨石之狀態下，使吸盤101與精研磨磨石分別旋轉，而精研磨加工面W1。In the fine polishing section 160, the processed surface W1 of the wafer W to be processed is finely polished. The fine grinding unit 160 has a fine grinding unit 161 having a ring-shaped and finely rotating grinding stone (not shown) that can rotate freely. In addition, the fine polishing section 161 is configured to be movable in the vertical direction and the horizontal direction along the pillar 162. In addition, the particle size of the abrasive particles of the fine grinding stone is smaller than the particle size of the abrasive particles of the medium grinding stone. Further, the processing surface W1 of the wafer W to be processed held on the chuck 101 is brought into contact with the fine grinding stone, and the chuck 101 and the fine grinding stone are respectively rotated to finish the processed surface W1.
(CMP裝置)
圖1所示之CMP裝置41具有例如2個將被處理晶圓W之加工面W1拋光的拋光部(圖中未示)。在第1拋光部使用之研磨粒的粒度大於在第2拋光部使用之研磨粒的粒度。又，在第1拋光部將加工面W1粗拋光，在第2拋光部將加工面W1精拋光。此外，CMP裝置41之結構可採用進行化學拋光處理之一般結構。舉例而言，可將被處理晶圓W之加工面W1朝上，以所謂之面朝上狀態進行處理，亦可將加工面W1朝下，以所謂之面朝下狀態進行處理。(CMP device)
The CMP apparatus 41 shown in FIG. 1 includes, for example, two polishing portions (not shown) that polish the processing surface W1 of the wafer W to be processed. The particle size of the abrasive grains used in the first polishing section is larger than the particle size of the abrasive grains used in the second polishing section. In addition, the processed surface W1 is roughly polished in the first polishing section, and the processed surface W1 is finely polished in the second polishing section. In addition, the structure of the CMP device 41 may be a general structure that is subjected to a chemical polishing treatment. For example, the processed surface W1 of the wafer W to be processed may be processed in a so-called face-up state, or the processed surface W1 may be processed in a so-called face-down state.
(周緣去除裝置)
第1周緣去除裝置42與第2周緣去除裝置43分別去除被處理晶圓W之周緣部。即，在基板處理系統1，以2階段去除被處理晶圓W之周緣部。(Peripheral removal device)
The first peripheral edge removing device 42 and the second peripheral edge removing device 43 each remove a peripheral edge portion of the wafer W to be processed. That is, in the substrate processing system 1, the peripheral portion of the wafer W to be processed is removed in two steps.
第1周緣去除裝置42具有作為保持疊合晶圓T(被處理晶圓W)之基板保持部的吸盤200。吸盤200支撐於吸盤台201，並構造成在於X軸方向延伸之搬送路徑202上移動自如。又，吸盤200以旋轉機構(圖中未示)構造成可旋轉。此外，在本實施形態中，吸盤台201與搬送路徑202構成本發明之移動機構。又，本發明之移動機構只要使吸盤200與後述第1磨輪211相對地於水平方移動即可，可使第1磨輪211於水平方向移動，抑或亦可使吸盤200與第1磨輪211兩者於水平方向移動。The first peripheral edge removing device 42 includes a chuck 200 as a substrate holding portion that holds the stacked wafer T (wafer W). The chuck 200 is supported on the chuck table 201 and is configured to move freely on a transport path 202 extending in the X-axis direction. The suction cup 200 is configured to be rotatable by a rotation mechanism (not shown). In the present embodiment, the chuck table 201 and the conveyance path 202 constitute the moving mechanism of the present invention. In addition, the moving mechanism of the present invention only needs to move the suction cup 200 and the first grinding wheel 211 described later relatively horizontally, and the first grinding wheel 211 can be moved horizontally, or both the suction cup 200 and the first grinding wheel 211 can be moved. Move in the horizontal direction.
又，第1周緣去除裝置42具有配置於吸盤200之上方而去除保持於吸盤200之被處理晶圓W的周緣部之第1周緣去除部210。如圖4所示，第1周緣去除部210具有第1磨輪211、支撐輪212、心軸213及驅動部214。The first peripheral edge removing device 42 includes a first peripheral edge removing portion 210 that is disposed above the chuck 200 and removes the peripheral edge portion of the wafer W to be processed and held by the chuck 200. As shown in FIG. 4, the first peripheral edge removal portion 210 includes a first grinding wheel 211, a support wheel 212, a spindle 213, and a driving portion 214.
固定了第1磨輪211之支撐輪212支撐於心軸213之心軸凸緣213a，於心軸213設有驅動部214。驅動部214內部裝設例如馬達(圖中未示)，藉由心軸213使第1磨輪211與支撐輪212旋轉。又，心軸213與驅動部214藉升降機構215構造成升降自如。The support wheel 212 to which the first grinding wheel 211 is fixed is supported by a mandrel flange 213 a of the mandrel 213, and a driving portion 214 is provided on the mandrel 213. A motor (not shown) is installed inside the driving portion 214, and the first grinding wheel 211 and the support wheel 212 are rotated by the spindle 213. In addition, the mandrel 213 and the driving portion 214 are configured to be freely raised and lowered by a lifting mechanism 215.
如圖5所示，第1磨輪211與支撐輪212分別俯視時呈圓環狀(環形)。第1磨輪211含有研磨粒，抵接被處理晶圓W之周緣部We，而將該周緣部We研磨去除。此外，在本實施形態中，第1磨輪211設為圓環狀，但不限於此，亦可沿著例如支撐輪212分割設置。As shown in FIG. 5, each of the first grinding wheel 211 and the support wheel 212 has a ring shape (annular shape) in a plan view. The first grinding wheel 211 contains abrasive particles, and abuts against the peripheral edge portion We of the wafer W to be processed, and polishes and removes the peripheral edge portion We. In addition, in the present embodiment, the first grinding wheel 211 is formed in a ring shape, but is not limited thereto, and may be provided separately along the support wheel 212, for example.
在第1周緣去除裝置42，首先，使被處理晶圓W於水平方向移動，並將第1磨輪211配置成第1磨輪211抵接被處理晶圓W之範圍與預先訂定之預定寬度一致。In the first peripheral edge removing device 42, first, the wafer to be processed W is moved in the horizontal direction, and the first grinding wheel 211 is arranged so that the range where the first grinding wheel 211 abuts the wafer W to be processed coincides with a predetermined predetermined width.
接著，藉在使第1磨輪211下降而抵接被處理晶圓W之周緣部We的狀態下，使第1磨輪211與疊合晶圓T(被處理晶圓W)分別旋轉，而研磨去除周緣部We。又，此時，藉從使第1磨輪211抵接被處理晶圓W之加工面W1的狀態，使該第1磨輪211移動至鉛直下方，而將周緣部We從上方至下方研磨去除。Next, in a state where the first grinding wheel 211 is lowered to abut the peripheral edge portion We of the wafer W to be processed, the first grinding wheel 211 and the stacked wafer T (the wafer to be processed W) are respectively rotated to be polished and removed. Periphery We. At this time, in a state where the first grinding wheel 211 is brought into contact with the processing surface W1 of the wafer W to be processed, the first grinding wheel 211 is moved vertically below, and the peripheral edge We is polished and removed from above to below.
此外，第2周緣去除裝置43亦具有與第1周緣去除裝置42相同之結構。即，如圖1及圖4所示，第2周緣去除裝置43具有吸盤220、吸盤台221、搬送路徑222、及第2周緣去除部230(第2磨輪231、支撐輪232、心軸233、驅動部234及升降機構235)。惟，第2磨輪231之研磨粒的粒度小於第1磨輪211之研磨粒的粒度。The second peripheral edge removing device 43 also has the same structure as the first peripheral edge removing device 42. That is, as shown in FIGS. 1 and 4, the second peripheral edge removal device 43 includes a suction cup 220, a suction table 221, a conveying path 222, and a second peripheral edge removal portion 230 (a second grinding wheel 231, a support wheel 232, a spindle 233, Drive unit 234 and lifting mechanism 235). However, the particle size of the abrasive grains of the second grinding wheel 231 is smaller than the particle size of the abrasive grains of the first grinding wheel 211.
(清洗裝置)
如圖1所示，在第1清洗裝置44，將被處理晶圓W之加工面W1粗清洗，在第2清洗裝置45將被處理晶圓W之加工面W1精清洗。(Cleaning device)
As shown in FIG. 1, the processing surface W1 of the wafer W to be processed is roughly cleaned in the first cleaning device 44, and the processing surface W1 of the wafer W to be processed is finely cleaned in the second cleaning device 45.
第1清洗裝置44具有保持疊合晶圓T並使其旋轉之旋轉吸盤300、及具有例如刷子之刷洗具301。又，藉一面使保持於旋轉吸盤300之疊合晶圓T旋轉，一面使刷洗具301抵接被處理晶圓W之加工面W1，而清洗加工面W1。The first cleaning device 44 includes a rotary chuck 300 that holds and rotates the stacked wafer T, and a brush cleaning tool 301 that includes, for example, a brush. In addition, the superimposed wafer T held by the rotary chuck 300 is rotated while the scrubbing tool 301 is brought into contact with the processing surface W1 of the wafer W to be processed, and the processing surface W1 is cleaned.
第2清洗裝置45具有保持疊合晶圓T並使其旋轉之旋轉吸盤310、將清洗液、例如純水供至被處理晶圓W之加工面W1的噴嘴311。再者，一面使保持於旋轉吸盤310之疊合晶圓T旋轉，一面從噴嘴311將清洗液供至被處理晶圓W之加工面W1。如此一來，所供給之清洗液在加工面W1上擴散，而清洗該加工面W1。The second cleaning device 45 includes a spin chuck 310 that holds and rotates the stacked wafer T, and a nozzle 311 that supplies a cleaning liquid, for example, pure water, to the processing surface W1 of the wafer W to be processed. Further, while the stacked wafer T held by the spin chuck 310 is rotated, the cleaning liquid is supplied from the nozzle 311 to the processing surface W1 of the wafer W to be processed. In this way, the supplied cleaning liquid is diffused on the processing surface W1, and the processing surface W1 is cleaned.
＜晶圓處理＞
接著，就使用如以上構成之基板處理系統1而進行之晶圓處理作說明。＜ Wafer Handling ＞
Next, wafer processing performed using the substrate processing system 1 configured as described above will be described.
首先，將收納有複數之疊合晶圓T的晶匣C載置於搬入搬出站2之晶匣載置台10。疊合晶圓T以被處理晶圓W之加工面W1朝向上側之狀態收納於晶匣C。First, the cassette C containing the plurality of stacked wafers T is placed on the cassette mounting table 10 of the carry-in / out station 2. The stacked wafer T is stored in the cassette C with the processed surface W1 of the wafer to be processed W facing upward.
接著，以晶圓搬送裝置22取出晶匣C內之疊合晶圓T，再將疊合晶圓T藉由過渡裝置(圖中未示)交接至晶圓搬送裝置32，搬送至處理站3之第1周緣去除裝置42。在第1周緣去除裝置42，去除被處理晶圓W之周緣部We，在以下之說明中，有將以第1周緣去除裝置42去除之周緣部We稱為第1周緣部We1之情形。Next, the stacked wafer T in the cassette C is taken out by the wafer transfer device 22, and then the stacked wafer T is transferred to the wafer transfer device 32 through a transition device (not shown) and transferred to the processing station 3 Of the first peripheral edge removal device 42. The peripheral edge portion We of the processed wafer W is removed by the first peripheral edge removal device 42. In the following description, the peripheral edge portion We removed by the first peripheral edge removal device 42 may be referred to as a first peripheral edge portion We1.
將搬送至第1周緣去除裝置42之疊合晶圓T保持於吸盤200。接著，如圖7(a)所示，使第1磨輪211移動至鉛直下方，使該第1磨輪211一面旋轉，一面抵接被處理晶圓W之第1周緣部We1。此時，將第1磨輪211配置成抵接被處理晶圓W之範圍與預先訂定之周向的第1寬度L1(自被處理晶圓W之端部起的距離)一致。The stacked wafer T transferred to the first peripheral removal device 42 is held on the chuck 200. Next, as shown in FIG. 7 (a), the first grinding wheel 211 is moved vertically below, and the first grinding wheel 211 is rotated while abutting against the first peripheral edge portion We1 of the wafer W to be processed. At this time, the range where the first grinding wheel 211 is arranged to abut the wafer W to be processed coincides with a predetermined first width L1 (distance from the end of the wafer W to be processed) in a predetermined circumferential direction.
之後，在使第1磨輪211抵接第1周緣部We1的狀態下，使第1磨輪211與疊合晶圓T(被處理晶圓W)分別旋轉，而如圖7(b)所示，進一步使第1磨輪211移動至鉛直下方。如此一來，可研磨第1周緣部We1。此時，第1磨輪211移動至預先訂定之第1深度H1(自被處理晶圓W之加工面W1起的距離)。此第1深度H1係第1磨輪211之下面不致到達接著劑G之深度。Thereafter, in a state where the first grinding wheel 211 is in contact with the first peripheral edge portion We1, the first grinding wheel 211 and the stacked wafer T (the wafer to be processed W) are respectively rotated, as shown in FIG. 7 (b), The first grinding wheel 211 is further moved vertically downward. In this way, the first peripheral edge portion We1 can be polished. At this time, the first grinding wheel 211 moves to a predetermined first depth H1 (a distance from the processing surface W1 of the wafer W to be processed). This first depth H1 is a depth under which the first grinding wheel 211 does not reach the adhesive G.
如此，於研磨第1周緣部We1之際，由於第1磨輪211之研磨粒的粒度大，故可使該第1磨輪211之研磨第1周緣部We1的速度(下降速度)大。結果，可在短時間進行第1周緣部We1之研磨。In this way, when the first peripheral edge portion We1 is polished, since the grain size of the abrasive grains of the first grinding wheel 211 is large, the speed (falling speed) of polishing the first peripheral edge portion We1 of the first grinding wheel 211 can be made large. As a result, the first peripheral edge portion We1 can be polished in a short time.
之後，如圖7(c)所示，使第1磨輪211一面旋轉，一面上升。此時，使疊合晶圓T於水平方向移動成與第1磨輪211拉開間隔。在此，第1磨輪211與被處理晶圓W分離之際，即，第1磨輪211之下端與被處理晶圓W之上端在相同的高度之際，當第1磨輪211之下端與被處理晶圓W之上端接觸，該等便鉤住，而有於被處理晶圓W的上端產生裂痕之虞。相對於此，如本實施形態般，藉使疊合晶圓T於水平方向移動，可於第1磨輪211之下端與被處理晶圓W之上端在相同高度之際，使該等拉開間隔，而可抑制裂痕之產生。After that, as shown in FIG. 7 (c), the first grinding wheel 211 is rotated while being raised. At this time, the stacked wafer T is moved in the horizontal direction so as to be spaced apart from the first grinding wheel 211. Here, when the first grinding wheel 211 is separated from the processed wafer W, that is, when the lower end of the first grinding wheel 211 and the upper end of the processed wafer W are at the same height, when the lower end of the first grinding wheel 211 is separated from the processed wafer W If the upper end of the wafer W comes into contact with each other, the hooks may be caught, and a crack may be generated at the upper end of the wafer W to be processed. On the other hand, as in this embodiment, if the stacked wafer T is moved in the horizontal direction, the lower end of the first grinding wheel 211 and the upper end of the processed wafer W can be at the same height, so that these gaps can be opened apart. , And can suppress the generation of cracks.
如此進行，如圖7(d)所示，在被處理晶圓W，去除在第1寬度L1及第1深度H1之範圍的第1周緣部We1，第1次周緣部去除處理結束(圖6之步驟P1)。In this way, as shown in FIG. 7 (d), the first peripheral edge portion We1 in the range of the first width L1 and the first depth H1 is removed from the wafer W to be processed, and the first peripheral edge portion removal processing is completed (FIG. 6). Step P1).
接著，以晶圓搬送裝置32將疊合晶圓T搬送至第2周緣去除裝置43。也以第2周緣去除裝置43去除被處理晶圓W之周緣部We，在以下之說明中，有將以第2周緣去除裝置43去除之周緣部We稱為第2周緣部We2之情形。Next, the stacked wafer T is transferred to the second peripheral edge removing device 43 by the wafer transfer device 32. The peripheral edge portion We of the processed wafer W is also removed by the second peripheral edge removal device 43. In the following description, the peripheral edge portion We removed by the second peripheral edge removal device 43 may be referred to as a second peripheral edge portion We2.
將搬送至第2周緣去除裝置43之疊合晶圓T保持於吸盤220。接著，如圖7(e)所示，使第2磨輪231移動至鉛直下方，使該第2磨輪231一面旋轉，一面抵接被處理晶圓W之第2周緣部We2。此時，第2磨輪231配置成抵接被處理晶圓W之範圍與預先訂定之周向的第2寬度L2(自被處理晶圓W之端部起的距離)一致。The stacked wafer T transferred to the second peripheral edge removing device 43 is held on the chuck 220. Next, as shown in FIG. 7 (e), the second grinding wheel 231 is moved vertically below, and the second grinding wheel 231 is rotated while abutting against the second peripheral edge portion We2 of the wafer W to be processed. At this time, the range in which the second grinding wheel 231 abuts the wafer W to be processed coincides with a predetermined second width L2 (distance from the end of the wafer W to be processed) in the circumferential direction.
之後，在使第2磨輪231抵接第2周緣部We2之狀態下，使第2磨輪231與疊合晶圓T(被處理晶圓W)分別旋轉，而如圖7(f)所示，進一步使第2磨輪231移動至鉛直下方。如此一來，可研磨第2周緣部We2。此時，第2磨輪231移動至預先訂定之第2深度H2(自被處理晶圓W之加工面W1起的距離)。此第2深度H2係第2磨輪231之下面到達支撐晶圓S之接合面S1的深度。此外，第2深度H2可任意設定。舉例而言，亦可將第2深度H2設定為接著劑G之高度，而不削除支撐晶圓S之接合面S1。Thereafter, in a state where the second grinding wheel 231 is in contact with the second peripheral edge portion We2, the second grinding wheel 231 and the stacked wafer T (processed wafer W) are respectively rotated, as shown in FIG. 7 (f), The second grinding wheel 231 is further moved vertically downward. In this way, the second peripheral edge portion We2 can be polished. At this time, the second grinding wheel 231 moves to a predetermined second depth H2 (a distance from the processing surface W1 of the wafer W to be processed). This second depth H2 is a depth from the lower surface of the second grinding wheel 231 to the bonding surface S1 of the supporting wafer S. The second depth H2 can be arbitrarily set. For example, the second depth H2 may be set to the height of the adhesive G without removing the bonding surface S1 that supports the wafer S.
如此，研磨第2周緣部We2之際，由於第2磨輪231之研磨粒的粒度小，故可使所研磨之第2周緣部We2的處理面之表面粗糙度小，而可使因研磨第2周緣部We2而露出之被處理晶圓W的表面之表面性質提高。再者，露出之被處理晶圓W的側面We3亦處理得宜(表面粗糙度小)。In this way, when the second peripheral edge portion We2 is polished, since the grain size of the abrasive grains of the second grinding wheel 231 is small, the surface roughness of the processed surface of the second peripheral edge portion We2 to be polished can be made small, and the second abrasive portion can be polished by The surface properties of the surface of the wafer W to be processed exposed at the peripheral edge portion We2 are improved. In addition, the exposed side We3 of the processed wafer W is also processed appropriately (the surface roughness is small).
在此，第2次研磨之第2周緣部We2的第2寬度L2小於第1次研磨之第1周緣部We1的第1寬度L1。即，對被處理晶圓W之周緣部We，第2磨輪231配置於比第1磨輪211外側。又，在周向外側，周緣部We殘留深度(H2-H1)、寬度(L1-L2)之範圍量。如上述，由於第2磨輪231之研磨粒的粒度小於第1磨輪211之研磨粒的粒度，故第2磨輪231之研磨速度小於第1磨輪211之研磨速度。因此，第1周緣部We1之研磨比起以第2磨輪231進行，以第1磨輪211進行效率較佳。又，因去除此第1周緣部We1而露出之被處理晶圓W的側面(以下稱為露出側面)如後述在以加工裝置40研磨加工面W1之際，一併去除。因此，由於即使被處理晶圓W之露出側面的表面性質差，最終仍會去除，故對被處理晶圓W之品質沒有影響。Here, the second width L2 of the second peripheral edge portion We2 in the second polishing is smaller than the first width L1 of the first peripheral edge portion We1 in the first polishing. In other words, the second grinding wheel 231 is disposed outside the first grinding wheel 211 of the peripheral edge portion We of the wafer W to be processed. In addition, on the outside in the circumferential direction, the peripheral edge portion We has a range of depth (H2-H1) and width (L1-L2). As described above, since the particle size of the abrasive grains of the second grinding wheel 231 is smaller than the particle size of the abrasive grains of the first grinding wheel 211, the grinding speed of the second grinding wheel 231 is smaller than that of the first grinding wheel 211. Therefore, the polishing of the first peripheral edge portion We1 is more efficient than that performed by the second grinding wheel 231 and the first grinding wheel 211. In addition, the side surface (hereinafter referred to as the exposed side surface) of the processed wafer W that is exposed by removing the first peripheral edge portion We1 is removed as described later when the processed surface W1 is polished by the processing device 40. Therefore, even if the surface properties of the exposed side surface of the processed wafer W are poor, they will eventually be removed, so there is no effect on the quality of the processed wafer W.
之後，如圖7(g)所示，使第2磨輪231一面旋轉，一面上升。此時，使疊合晶圓T於水平方向移動成與第2磨輪231拉開間隔。結果，如使用圖7(c)所說明，可抑制被處理晶圓W產生裂痕。After that, as shown in FIG. 7 (g), the second grinding wheel 231 is raised while being rotated. At this time, the stacked wafer T is moved in the horizontal direction so as to be spaced apart from the second grinding wheel 231. As a result, as described with reference to FIG. 7 (c), cracks can be prevented from occurring in the wafer W to be processed.
如此進行，如圖7(h)所示，在被處理晶圓W去除在第2寬度L2及第2深度H2之範圍的第2周緣部We2，第2次周緣去除處理結束(圖6之步驟P2)。In this way, as shown in FIG. 7 (h), the second peripheral edge portion We2 in the range of the second width L2 and the second depth H2 is removed from the wafer W to be processed, and the second peripheral edge removal processing is completed (step in FIG. 6) P2).
接著，以晶圓搬送裝置32將疊合晶圓T搬送至加工裝置40。將搬送至加工裝置40之疊合晶圓T交接至校準單元120。然後，在校準單元120，調節疊合晶圓T之水平方向的方位(圖6之步驟P3)。Next, the stacked wafer T is transferred to the processing device 40 by the wafer transfer device 32. The stacked wafer T transferred to the processing apparatus 40 is transferred to the calibration unit 120. Then, in the alignment unit 120, the horizontal orientation of the stacked wafer T is adjusted (step P3 in FIG. 6).
接著，以搬送單元110將疊合晶圓T從校準單元120搬送至交接位置A0，交接至該交接位置A0之吸盤101。之後，使旋轉台100逆時鐘旋轉90度，而使吸盤101移動至第1加工位置A1。接著，以粗研磨單元140將被處理晶圓W之加工面W1粗研磨(圖6之步驟P4)。Next, the stacked wafer T is transferred from the calibration unit 120 to the transfer position A0 by the transfer unit 110 and transferred to the chuck 101 at the transfer position A0. Thereafter, the turntable 100 is rotated 90 degrees counterclockwise, and the suction pad 101 is moved to the first processing position A1. Next, the processing surface W1 of the wafer W to be processed is roughly ground by the rough grinding unit 140 (step P4 in FIG. 6).
然後，使旋轉台100逆時鐘旋轉90度，使吸盤101移動至第2加工位置A2。接著，以中研磨單元150將被處理晶圓W之加工面W1中研磨(圖6之步驟P5)。Then, the turntable 100 is rotated 90 degrees counterclockwise to move the chuck 101 to the second processing position A2. Next, the processing surface W1 of the wafer W to be processed is polished by the intermediate polishing unit 150 (step P5 in FIG. 6).
之後，使旋轉台100逆時鐘旋轉90度，而使吸盤101移動至第3加工位置A3。接著，以精研磨單元160將被處理晶圓W之加工面W1精研磨(圖6之步驟P6)。然後，如圖7(i)所示，研磨被處理晶圓W之加工面W1。此外，圖7(i)所示之虛線的範圍係以該等研磨單元140、150、160研磨被處理晶圓W之加工面W1的範圍，亦包含對應上述第1周緣部We1之露出側面。又，研磨被處理晶圓W之加工面W1的深度係第1深度H1與第2深度H2之間。Thereafter, the turntable 100 is rotated 90 degrees counterclockwise, and the suction pad 101 is moved to the third processing position A3. Next, the processing surface W1 of the wafer W to be processed is finely ground by the fine grinding unit 160 (step P6 in FIG. 6). Then, as shown in FIG. 7 (i), the processed surface W1 of the wafer W to be processed is polished. In addition, the range of the dotted line shown in FIG. 7 (i) is the range where the processing surface W1 of the processed wafer W is polished by the polishing units 140, 150, and 160, and also includes the exposed side surface corresponding to the first peripheral edge portion We1. The depth of the processed surface W1 of the wafer W to be processed is between the first depth H1 and the second depth H2.
接著，使旋轉台100逆時鐘旋轉90度，或使旋轉台100順時鐘旋轉270度，而使吸盤101移動至交接位置A0。在此，以從清洗液噴嘴(圖中未示)噴吐之清洗液清洗被處理晶圓W之加工面W1(圖6之步驟P7)。Next, the turntable 100 is rotated 90 degrees counterclockwise, or the turntable 100 is rotated 270 degrees clockwise, so that the suction cup 101 is moved to the transfer position A0. Here, the processing surface W1 of the wafer W to be processed is cleaned with a cleaning liquid sprayed from a cleaning liquid nozzle (not shown) (step P7 in FIG. 6).
然後，以搬送單元110將疊合晶圓T從交接位置A0搬送至清洗單元130。接著，在清洗單元130，在疊合晶圓T保持於搬送墊114之狀態下，清洗支撐晶圓S之非接合面S2並使其乾燥(圖6之步驟P8)。Then, the stacked wafer T is transferred from the transfer position A0 to the cleaning unit 130 by the transfer unit 110. Next, in the cleaning unit 130, the non-joint surface S2 supporting the wafer S is cleaned and dried while the stacked wafer T is held on the transfer pad 114 (step P8 in FIG. 6).
之後，以晶圓搬送裝置32將疊合晶圓T搬送至CMP裝置41。在CMP裝置41，以第1拋光部(圖中未示)將被處理晶圓W之加工面W1拋光(粗CMP)，再以第2拋光部(圖中未示)將被處理晶圓W之加工面W1拋光(精CMP)(圖6之步驟P9)。Thereafter, the stacked wafer T is transferred to the CMP device 41 by the wafer transfer device 32. In the CMP apparatus 41, the processing surface W1 of the wafer W to be processed is polished (rough CMP) with a first polishing section (not shown), and then the wafer W to be processed is polished with a second polishing section (not shown). The machined surface W1 is polished (fine CMP) (step P9 in FIG. 6).
接著，以晶圓搬送裝置32將疊合晶圓T搬送至第1清洗裝置44。將搬送至第1清洗裝置44之疊合晶圓T保持於旋轉吸盤300。然後，一面使保持於旋轉吸盤300之疊合晶圓T旋轉，一面使刷洗具301抵接被處理晶圓W之加工面W1，而清洗加工面W1(圖6之P10)。此步驟P10之清洗係物理性去除加工面W1上之顆粒等，為粗清洗。Next, the stacked wafer T is transferred to the first cleaning device 44 by the wafer transfer device 32. The stacked wafer T transferred to the first cleaning device 44 is held on the spin chuck 300. Then, while the superimposed wafer T held by the rotary chuck 300 is rotated, the scrubbing tool 301 is brought into contact with the processing surface W1 of the wafer W to be processed, and the processing surface W1 is cleaned (P10 in FIG. 6). The cleaning in this step P10 is to physically remove particles and the like on the processing surface W1, and is rough cleaning.
之後，以晶圓搬送裝置32將疊合晶圓T搬送至第2清洗裝置45。將搬送至第2清洗裝置45之疊合晶圓T保持於旋轉吸盤310。然後，一面使保持於旋轉吸盤310之疊合晶圓T旋轉，一面從噴嘴將清洗液供至被處理晶圓W之加工面W1，而清洗加工面W1(圖6之步驟P11)。此步驟P11之清洗係最後之精清洗。Thereafter, the stacked wafer T is transferred to the second cleaning device 45 by the wafer transfer device 32. The stacked wafer T transferred to the second cleaning device 45 is held on the spin chuck 310. Then, while the stacked wafer T held by the spin chuck 310 is rotated, the cleaning liquid is supplied from the nozzle to the processing surface W1 of the processed wafer W, and the processing surface W1 is cleaned (step P11 in FIG. 6). The cleaning in this step P11 is the final fine cleaning.
然後，將已施行所有處理之疊合晶圓T從晶圓搬送裝置32交接至晶圓搬送裝置22，搬送至晶匣載置台10之晶匣C。如此進行，基板處理系統1之一連串晶圓處理結束。Then, the stacked wafer T having undergone all the processes is transferred from the wafer transfer device 32 to the wafer transfer device 22, and is transferred to the cassette C of the cassette mounting table 10. In this manner, a series of wafer processes of the substrate processing system 1 is completed.
根據以上之實施形態，以步驟P1與步驟P2之2階段，去除了被處理晶圓W之周緣部We。在步驟P1，由於第1磨輪211之研磨粒的粒度大，故可縮短第1周緣部We1之去除時間，而可使晶圓處理之生產量提高。又，在之後的步驟P2，由於第2磨輪231之研磨粒的粒度小，故可使所去除之第2周緣部We2的處理面之表面粗糙度小。藉如此使用粒度不同之2個磨輪211、231，可縮短去除周緣部We所耗費的時間，並且可使因研磨第2周緣部We2而露出之被處理晶圓W的表面之表面性質提高。According to the above embodiment, the peripheral edge portion We of the wafer W to be processed is removed in two stages of step P1 and step P2. In step P1, since the grain size of the abrasive grains of the first grinding wheel 211 is large, the removal time of the first peripheral edge portion We1 can be shortened, and the throughput of wafer processing can be increased. In the subsequent step P2, since the particle size of the abrasive grains of the second grinding wheel 231 is small, the surface roughness of the treated surface of the removed second peripheral edge portion We2 can be made small. By using the two grinding wheels 211 and 231 having different particle sizes in this manner, the time taken to remove the peripheral edge portion We can be shortened, and the surface properties of the surface of the processed wafer W exposed by polishing the second peripheral edge portion We2 can be improved.
又，根據本實施形態，在一基板處理系統1中，可對複數之被處理晶圓W進行一連串之處理，而可使生產量提高。In addition, according to this embodiment, in a substrate processing system 1, a plurality of processed wafers W can be processed in series, and the throughput can be increased.
＜磨輪之修整＞
在以上之實施形態的步驟P2，使用第2磨輪231去除被處理晶圓W之第2周緣部We2之際，如圖8所示，有第2周緣部We2之底面的角部N(以圖中之虛線包圍的部分)彎曲之情形。此時，由於從被處理晶圓W剝離支撐晶圓S後，被處理晶圓W之端面殘留彎曲部分，被處理晶圓W之周緣部We形成尖銳之形狀，故在被處理晶圓W之周緣部We產生碎裂，有被處理晶圓W受到損傷之虞。＜ Trimming of grinding wheel ＞
In step P2 of the above embodiment, when the second grinding wheel 231 is used to remove the second peripheral edge portion We2 of the wafer W to be processed, as shown in FIG. The part enclosed by a dotted line in the middle) is bent. At this time, since the support wafer S is peeled off from the processed wafer W, a curved portion remains on the end surface of the processed wafer W, and the peripheral edge portion We of the processed wafer W has a sharp shape. Fragmentation of the peripheral edge We may cause damage to the processed wafer W.
此點，藉在例如步驟P2，控制第2磨輪231之研磨速度或第2磨輪231之旋轉速度等，可將圖8所示之第2周緣部We2的角部N之彎曲抑制在某程度。然而，當反覆使用第2磨輪231時，該第2磨輪231之研磨面磨損，第2周緣部We2之角部N易彎曲。In this regard, for example, by controlling the grinding speed of the second grinding wheel 231 or the rotation speed of the second grinding wheel 231 in step P2, the bending of the corner portion N of the second peripheral edge portion We2 shown in FIG. 8 can be suppressed to a certain degree. However, when the second grinding wheel 231 is repeatedly used, the polishing surface of the second grinding wheel 231 is worn, and the corner portion N of the second peripheral edge portion We2 is easily bent.
是故，宜進行調整第2磨輪231之研磨面的所謂修整。在修整第2磨輪231之際，如圖1及圖9所示，使用作為調整部之修整板400。修整板400俯視時呈圓形，其周緣部具段部401。Therefore, it is desirable to perform a so-called trimming to adjust the polishing surface of the second grinding wheel 231. When dressing the second grinding wheel 231, as shown in FIGS. 1 and 9, a dressing plate 400 serving as an adjustment portion is used. The trimming plate 400 is circular in plan view, and has a peripheral portion with a segment 401.
修整板400在例如第2周緣去除裝置43之內部，設於第2周緣去除部230之X軸正方向側。於修整板400之下面側設有使該修整板400於水平方向及鉛直方向移動並且旋轉之移動機構410。移動機構410具有例如軸411、2條臂412、413及驅動部414。軸411設於修整板400之下面與第1臂412的前端部之間。於第1臂412之前端部設有旋轉部(圖中未示)，藉此旋轉部透過軸411修整板400構造成旋轉自如。第1臂412與第2臂413以關節部(圖中未示)連接，藉此關節部，第1臂412構造成以基端部為中心旋繞自如。第2臂413安裝於驅動部414，藉驅動部414，第2臂413構造成以基端部為中心旋繞自如，並且於鉛直方向移動自如。再者，藉具有此結構之移動機構410，修整板400可對第2周緣去除部230進退自如地移動。The trimming plate 400 is provided, for example, inside the second peripheral edge removing device 43 on the X-axis positive direction side of the second peripheral edge removing portion 230. A moving mechanism 410 is provided on the lower side of the dressing plate 400 to move and rotate the dressing plate 400 in the horizontal and vertical directions. The moving mechanism 410 includes, for example, a shaft 411, two arms 412, 413, and a driving unit 414. The shaft 411 is provided between the lower surface of the dressing plate 400 and the front end portion of the first arm 412. A rotating portion (not shown) is provided at the front end of the first arm 412, whereby the rotating portion passes through the shaft 411 and the trimming plate 400 is configured to rotate freely. The first arm 412 and the second arm 413 are connected by a joint portion (not shown), whereby the first arm 412 is structured to be rotatable around the base end portion. The second arm 413 is mounted on the driving portion 414. By the driving portion 414, the second arm 413 is configured to be rotatable around the base end portion and move freely in the vertical direction. Furthermore, with the moving mechanism 410 having this structure, the trimming plate 400 can move the second peripheral edge removing portion 230 freely.
此外，修整板400不限上述第2周緣去除裝置43之內部，可設置於任意之位置。舉例而言，修整板400亦可載置於設在第2周緣去除裝置43外部的例如架等之設置處(圖中未示)，在保持於吸盤200之狀態下進行修整。In addition, the trimming plate 400 is not limited to the inside of the second peripheral edge removing device 43 described above, and may be provided at any position. For example, the trimming plate 400 may be placed on a place (not shown) such as a rack or the like provided outside the second peripheral edge removing device 43 and trimmed while being held by the suction cup 200.
此時，一面使第2磨輪231與修整板400分別旋轉，一面使修整板400之段部401抵接第2磨輪231之周緣部。如此一來，在第2磨輪231之周緣部，分別研磨下面231a與外側面231b(第2周緣部We2之研磨面)而使之平坦化。即，在第2磨輪231，抵接圖8所示之第2周緣部We2的角部N之下端形成直角。接著，當使用如此施行了修整之第2磨輪231，研磨第2周緣部We2時，可將該第2周緣部We2之角部N形成直角，而可抑制彎曲。At this time, while rotating the second grinding wheel 231 and the dressing plate 400 respectively, the segment portion 401 of the dressing plate 400 is brought into contact with the peripheral edge portion of the second grinding wheel 231. In this way, the lower surface 231a and the outer surface 231b (the polishing surface of the second peripheral edge portion We2) are polished on the peripheral edge portion of the second grinding wheel 231 to flatten them, respectively. That is, the second grinding wheel 231 forms a right angle at the lower end of the corner portion N that abuts the second peripheral edge portion We2 shown in FIG. 8. Next, when the second grinding wheel 231 subjected to the trimming is used to polish the second peripheral edge portion We2, the corner portion N of the second peripheral edge portion We2 can be formed at a right angle, thereby suppressing bending.
此外，在第2磨輪231之修整時，亦可事先使用例如雷射位移計，檢查第2磨輪231之周緣部的下面231a與外側面231b之表面狀態。具體而言，測定例如下面231a與外側面231b之高度。接著，檢查之結果，於下面231a與外側面231b任一者或兩者發現磨損或異常突起時，亦可進行第2磨輪231之修整。In addition, during the dressing of the second grinding wheel 231, the surface conditions of the lower surface 231a and the outer side surface 231b of the peripheral edge portion of the second grinding wheel 231 may be checked in advance using, for example, a laser displacement meter. Specifically, for example, the height of the lower surface 231a and the outer surface 231b is measured. Next, as a result of the inspection, when any or both of the lower surface 231a and the outer side surface 231b are found to be worn or abnormally protruded, the second grinding wheel 231 can be trimmed.
又，從抑制第2周緣部We2之角部N的彎曲之觀點而言，第2磨輪231亦可側視時呈錐狀。使第2磨輪231之下面的徑大於上面的徑，即，使下面伸出至外側。此時，即使第2磨輪231磨損，該第2磨輪231之下端俯視時仍呈銳角，第2周緣部We2之角部N不易彎曲。Moreover, from the viewpoint of suppressing the bending of the corner portion N of the second peripheral edge portion We2, the second grinding wheel 231 may be tapered when viewed from the side. The diameter of the lower surface of the second grinding wheel 231 is made larger than the diameter of the upper surface, that is, the lower surface is extended to the outside. At this time, even if the second grinding wheel 231 is worn, the lower end of the second grinding wheel 231 has an acute angle in plan view, and the corner portion N of the second peripheral edge portion We2 is not easily bent.
再者，在上述之例中，就第2磨輪231之修整作了說明，對第1磨輪211也宜使用同樣之修整板400，進行修整。Furthermore, in the above example, the trimming of the second grinding wheel 231 has been described, and the same dressing plate 400 for the first grinding wheel 211 should also be used for trimming.
＜其他實施形態＞
基板處理系統1之結構不限上述實施形態。舉例而言，在上述實施形態之基板處理系統1，第2周緣去除部230設於加工裝置40之外部的第2周緣去除裝置43，亦可如圖10所示，設於加工裝置40之內部。此時，第2周緣去除部230配置於第1加工位置A1，於第2加工位置A2與第3加工位置A3分別配置粗研磨單元140與精研磨單元160。此外，此時，省略中研磨單元150。＜ Other embodiments ＞
The structure of the substrate processing system 1 is not limited to the above embodiment. For example, in the substrate processing system 1 of the above embodiment, the second peripheral edge removal unit 230 is provided outside the processing device 40 and the second peripheral edge removal device 43 may be provided inside the processing device 40 as shown in FIG. 10. . At this time, the second peripheral edge removing portion 230 is disposed at the first processing position A1, and the rough polishing unit 140 and the fine polishing unit 160 are disposed at the second processing position A2 and the third processing position A3, respectively. In addition, at this time, the intermediate polishing unit 150 is omitted.
在第1周緣去除裝置42，去除被處理晶圓W之第1周緣部We1，其範圍(第1寬度L1與第1深度H1)通常大。因此，即使使用粒度大之第1磨輪211，仍有第1周緣部We1的去除耗費某程度時間之情形。The first peripheral edge portion We1 of the wafer W to be processed is removed by the first peripheral edge removal device 42, and its range (first width L1 and first depth H1) is usually large. Therefore, even if the first grinding wheel 211 having a large grain size is used, the removal of the first peripheral edge portion We1 may take some time.
另一方面，以第2周緣去除裝置43去除之第2周緣部We2的範圍(第2寬度L2與第2深度H2)通常小。因此，即使將第2周緣去除部230設於加工裝置40之內部，加工裝置40內之生產量亦不致降低。因而，藉如本實施形態般將第2周緣去除部230設於加工裝置40之內部，亦可使晶圓處理全體之生產量提高。On the other hand, the range of the second peripheral edge portion We2 (the second width L2 and the second depth H2) removed by the second peripheral edge removing device 43 is usually small. Therefore, even if the second peripheral edge removal portion 230 is provided inside the processing device 40, the production amount in the processing device 40 is not reduced. Therefore, by providing the second peripheral edge removal portion 230 inside the processing device 40 as in this embodiment, the throughput of the entire wafer processing can be increased.
又，在上述實施形態之基板處理系統1，加工裝置40、CMP裝置41、第1周緣去除裝置42、第2周緣去除裝置43、第1清洗裝置44、第2清洗裝置45之數量及配置可任意設計。Moreover, in the substrate processing system 1 of the above embodiment, the number and arrangement of the processing apparatus 40, the CMP apparatus 41, the first peripheral edge removal device 42, the second peripheral edge removal device 43, the first cleaning device 44, and the second cleaning device 45 are possible. Arbitrary design.
在上述實施形態之基板處理系統1中，第1周緣去除部210與第2周緣去除部230分開設置，亦可使該等合為一體。舉例而言，對共通之支撐輪(圖中未示)將第1磨輪211與第2磨輪231安裝成雙圈同心圓狀。當使例如第1磨輪211之徑大，使第2磨輪231之徑小時，於第1磨輪211之內側配置第2磨輪231。In the substrate processing system 1 of the above-mentioned embodiment, the first peripheral edge removal portion 210 and the second peripheral edge removal portion 230 are provided separately, and these may be integrated into one. For example, for a common support wheel (not shown), the first grinding wheel 211 and the second grinding wheel 231 are installed in a double-circle concentric circle. For example, when the diameter of the first grinding wheel 211 is made large and the diameter of the second grinding wheel 231 is made small, the second grinding wheel 231 is arranged inside the first grinding wheel 211.
此時，在1個周緣去除裝置之內部，可使用2個第1周緣去除部210與第2周緣去除部230，以2階段去除被處理晶圓W之周緣部We。因而，可使晶圓處理之生產量提高。At this time, inside the one peripheral edge removal device, two first peripheral edge removal portions 210 and the second peripheral edge removal portion 230 can be used to remove the peripheral edge portion We of the wafer W to be processed in two stages. Therefore, the throughput of wafer processing can be increased.
在上述實施形態之基板處理系統1中，被處理晶圓W與支撐晶圓S藉由接著劑G接合，亦可使用例如雙面膠帶取代此接著劑G來接合被處理晶圓W與支撐晶圓S。In the substrate processing system 1 of the above-mentioned embodiment, the processed wafer W and the supporting wafer S are bonded by the adhesive G, and for example, a double-sided tape may be used instead of the adhesive G to bond the processed wafer W and the supporting wafer. Circle S.
以上，就本發明之實施形態作了說明，本發明不限於此例。只要是該業者，在記載於申請專利範圍之技術性思想的範疇內，可想到各種變更例或修正例是顯而易見的，應了解該等當然也屬於本發明之技術性範圍。As mentioned above, although embodiment of this invention was described, this invention is not limited to this example. As long as it is a person skilled in the art, it is obvious that various modifications or amendments are conceivable within the scope of the technical ideas described in the scope of patent application, and it should be understood that these certainly belong to the technical scope of the present invention.
1‧‧‧基板處理系統1‧‧‧ substrate processing system
2‧‧‧搬入搬出站 2‧‧‧ moved in and out
3‧‧‧處理站 3‧‧‧processing station
10‧‧‧晶匣載置台 10‧‧‧Crystal Mounting Stage
20‧‧‧晶圓搬送區域 20‧‧‧ Wafer transfer area
21‧‧‧搬送路徑 21‧‧‧ transport route
22‧‧‧晶圓搬送裝置 22‧‧‧ Wafer Transfer Device
23‧‧‧搬送臂 23‧‧‧ transfer arm
30‧‧‧晶圓搬送區域 30‧‧‧ Wafer Transfer Area
31‧‧‧搬送路徑 31‧‧‧ transport route
32‧‧‧晶圓搬送裝置 32‧‧‧ Wafer Transfer Device
33‧‧‧搬送臂 33‧‧‧ transfer arm
40‧‧‧加工裝置 40‧‧‧Processing equipment
41‧‧‧CMP裝置 41‧‧‧CMP device
42‧‧‧第1周緣去除裝置 42‧‧‧1st perimeter removal device
43‧‧‧第2周緣去除裝置 43‧‧‧ 2nd peripheral edge removal device
44‧‧‧第1清洗裝置 44‧‧‧The first cleaning device
45‧‧‧第2清洗裝置 45‧‧‧Second cleaning device
50‧‧‧控制部 50‧‧‧Control Department
100‧‧‧旋轉台 100‧‧‧ Rotary Stage
101‧‧‧吸盤 101‧‧‧ Suction cup
102‧‧‧吸盤基座 102‧‧‧ Suction base
110‧‧‧搬送單元 110‧‧‧Transportation unit
111‧‧‧第1臂 111‧‧‧ 1st arm
112‧‧‧第2臂 112‧‧‧ 2nd arm
113‧‧‧第3臂 113‧‧‧ 3rd arm
114‧‧‧搬送墊 114‧‧‧ transfer pad
115‧‧‧鉛直移動機構 115‧‧‧Vertical moving mechanism
120‧‧‧校準單元 120‧‧‧calibration unit
130‧‧‧清洗單元 130‧‧‧cleaning unit
140‧‧‧粗研磨單元 140‧‧‧Coarse grinding unit
141‧‧‧粗研磨部 141‧‧‧Coarse grinding section
142‧‧‧支柱 142‧‧‧ Pillar
150‧‧‧中研磨單元 150‧‧‧ medium grinding unit
151‧‧‧中研磨部 151‧‧‧Middle grinding department
152‧‧‧支柱 152‧‧‧ Pillar
160‧‧‧精研磨單元 160‧‧‧Fine grinding unit
161‧‧‧精研磨部 161‧‧‧Fine grinding department
162‧‧‧支柱 162‧‧‧ Pillar
200‧‧‧吸盤 200‧‧‧ Suction cup
201‧‧‧吸盤台 201‧‧‧ Suction table
202‧‧‧搬送路徑 202‧‧‧Transport route
210‧‧‧第1周緣去除部 210‧‧‧ 1st perimeter removal section
211‧‧‧第1磨輪 211‧‧‧The first grinding wheel
212‧‧‧支撐輪 212‧‧‧Support Wheel
213‧‧‧心軸 213‧‧‧ mandrel
213a‧‧‧心軸凸緣 213a‧‧‧mandrel flange
214‧‧‧驅動部 214‧‧‧Driver
215‧‧‧升降機構 215‧‧‧Lifting mechanism
220‧‧‧吸盤 220‧‧‧ Suction cup
221‧‧‧吸盤台 221‧‧‧ Suction table
222‧‧‧搬送路徑 222‧‧‧Transport route
230‧‧‧第2周緣去除部 230‧‧‧ 2nd peripheral edge removal section
231‧‧‧第2磨輪 231‧‧‧ 2nd grinding wheel
231a‧‧‧下面 Below 231a‧‧‧
231b‧‧‧外側面 231b‧‧‧ outside
232‧‧‧支撐輪 232‧‧‧Support Wheel
233‧‧‧心軸 233‧‧‧ mandrel
234‧‧‧驅動部 234‧‧‧Driver
235‧‧‧升降機構 235‧‧‧Lifting mechanism
300‧‧‧旋轉吸盤 300‧‧‧Rotary suction cup
301‧‧‧刷洗具 301‧‧‧Brushes
310‧‧‧旋轉吸盤 310‧‧‧Rotating suction cup
311‧‧‧噴嘴 311‧‧‧Nozzle
400‧‧‧修整板 400‧‧‧Finishing board
401‧‧‧段部 401‧‧‧section
410‧‧‧移動機構 410‧‧‧mobile agency
411‧‧‧軸 411‧‧‧axis
412‧‧‧第1臂 412‧‧‧1st arm
413‧‧‧第2臂 413‧‧‧ 2nd arm
414‧‧‧驅動部 414‧‧‧Driver
A0‧‧‧交接位置 A0‧‧‧Transfer position
A1‧‧‧加工位置 A1‧‧‧Processing position
A2‧‧‧加工位置 A2‧‧‧Processing position
A3‧‧‧加工位置 A3‧‧‧Processing position
C‧‧‧晶匣 C‧‧‧Crystal Box
G‧‧‧ 接著劑 G‧‧‧ Adhesive
H1‧‧‧第1深度 H1‧‧‧ first depth
H2‧‧‧第2深度 H2‧‧‧ 2nd Depth
L1‧‧‧第1寬度 L1‧‧‧1st width
L2‧‧‧第2寬度 L2‧‧‧ 2nd width
N‧‧‧ 角部 N‧‧‧ Corner
P1‧‧‧步驟 P1‧‧‧step
P2‧‧‧步驟 P2‧‧‧step
P3‧‧‧步驟 P3‧‧‧step
P4‧‧‧步驟 P4‧‧‧step
P5‧‧‧步驟 P5‧‧‧step
P6‧‧‧步驟 P6‧‧‧step
P7‧‧‧步驟 P7‧‧‧step
P8‧‧‧步驟 P8‧‧‧step
P9‧‧‧步驟 P9‧‧‧step
P10‧‧‧步驟 P10‧‧‧step
P11‧‧‧步驟 P11‧‧‧step
S‧‧‧支撐晶圓 S‧‧‧Support wafer
S1‧‧‧接合面 S1‧‧‧Joint surface
S2‧‧‧非接合面 S2‧‧‧ non-joint surface
T‧‧‧疊合晶圓 T‧‧‧ stacked wafer
W‧‧‧被處理晶圓 W‧‧‧ Wafer Processed
W1‧‧‧加工面 W1‧‧‧Working surface
W2‧‧‧非加工面 W2‧‧‧Non-machined surface
We‧‧‧周緣部 We‧‧‧ Peripheral
We1‧‧‧第1周緣部 We1‧‧‧ the first peripheral edge
We2‧‧‧第2周緣部 We2‧‧‧ 2nd peripheral edge
We3‧‧‧側面 We3‧‧‧ side
X‧‧‧方向 X‧‧‧ direction
Y‧‧‧方向 Y‧‧‧ direction
Z‧‧‧方向 Z‧‧‧ direction
圖1係示意顯示本實施形態之基板處理系統的結構之概略的平面圖。FIG. 1 is a plan view schematically showing the configuration of a substrate processing system according to this embodiment.
圖2係顯示疊合晶圓之結構的概略之側視圖。 FIG. 2 is a schematic side view showing the structure of a stacked wafer.
圖3係顯示加工裝置之結構的概略之平面圖。 Fig. 3 is a plan view showing the outline of the structure of the processing apparatus.
圖4(a)、(b)係顯示第1周緣去除部(第2周緣去除部)之結構的概略之側視圖。 4 (a) and 4 (b) are side views showing the outline of the structure of the first peripheral edge removal portion (second peripheral edge removal portion).
圖5(a)~(c)係顯示第1周緣去除部(第2周緣去除部)之結構的概略之說明圖。 5 (a) to 5 (c) are explanatory diagrams showing the outline of the configuration of the first peripheral edge removal portion (second peripheral edge removal portion).
圖6係顯示晶圓處理之主要製程的流程圖。 FIG. 6 is a flowchart showing a main process of wafer processing.
圖7(a)~(i)係顯示在晶圓處理之主要製程中研磨被處理晶圓之樣態的說明圖。 7 (a) ~ (i) are explanatory diagrams showing a state in which a wafer to be processed is polished in a main process of wafer processing.
圖8係顯示去除被處理晶圓的第2周緣部之際第2周緣部之底面的角部彎曲之樣態的說明圖。 FIG. 8 is an explanatory view showing a state where a corner portion of a bottom surface of a second peripheral edge portion is bent when a second peripheral edge portion of a wafer to be processed is removed.
圖9(a)、(b)係顯示以修整板調整第2磨輪之研磨面的樣態之說明圖。 9 (a) and 9 (b) are explanatory diagrams showing a state in which the polishing surface of the second grinding wheel is adjusted by a dressing plate.
圖10係示意顯示另一實施形態之基板處理系統的結構之概略的平面圖。 FIG. 10 is a plan view schematically showing the configuration of a substrate processing system according to another embodiment.
Claims (18)
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| JP2017-243303 | 2017-12-19 | ||
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| TWI768827B (en) * | 2020-04-28 | 2022-06-21 | 大陸商北京爍科精微電子裝備有限公司 | chemical mechanical planarization equipment |
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| JP7237557B2 (en) * | 2018-12-14 | 2023-03-13 | 株式会社東京精密 | Edge trimming method for bonded wafer |
| JP7262903B2 (en) * | 2019-08-26 | 2023-04-24 | 株式会社ディスコ | Carrier plate removal method |
| JP7262904B2 (en) * | 2019-08-26 | 2023-04-24 | 株式会社ディスコ | Carrier plate removal method |
| JP2022092769A (en) * | 2020-12-11 | 2022-06-23 | 株式会社ディスコ | Edge trimming method |
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| JPH09216152A (en) | 1996-02-09 | 1997-08-19 | Okamoto Kosaku Kikai Seisakusho:Kk | End face grinding device and end face grinding method |
| JPH10209408A (en) * | 1997-01-27 | 1998-08-07 | Mitsubishi Materials Shilicon Corp | Manufacture of soi substrate |
| JP3515917B2 (en) * | 1998-12-01 | 2004-04-05 | シャープ株式会社 | Method for manufacturing semiconductor device |
| JP2001157959A (en) * | 1999-11-30 | 2001-06-12 | Tokyo Seimitsu Co Ltd | Surface grinding apparatus |
| JP4918229B2 (en) * | 2005-05-31 | 2012-04-18 | 信越半導体株式会社 | Manufacturing method of bonded wafer |
| JP4839818B2 (en) * | 2005-12-16 | 2011-12-21 | 信越半導体株式会社 | Manufacturing method of bonded substrate |
| JP5119614B2 (en) * | 2006-06-13 | 2013-01-16 | 株式会社東京精密 | Wafer outer periphery grinding method |
| JP2009088244A (en) * | 2007-09-28 | 2009-04-23 | Tokyo Electron Ltd | Substrate cleaning device, substrate treatment device, substrate cleaning method, substrate treatment method, and storage medium |
| JP5422907B2 (en) * | 2008-04-11 | 2014-02-19 | 富士電機株式会社 | Manufacturing method of semiconductor device |
| JP5268599B2 (en) * | 2008-12-03 | 2013-08-21 | 株式会社ディスコ | Grinding apparatus and grinding method |
| FR2957190B1 (en) * | 2010-03-02 | 2012-04-27 | Soitec Silicon On Insulator | PROCESS FOR PRODUCING A MULTILAYER STRUCTURE WITH THERMOMECHANICAL EFFECT DETOURAGE |
| JP5922342B2 (en) * | 2011-05-10 | 2016-05-24 | 株式会社ディスコ | Wafer chamfer removal device |
| JP6016473B2 (en) * | 2012-06-20 | 2016-10-26 | 株式会社ディスコ | Wafer processing method |
| KR102104430B1 (en) * | 2012-09-24 | 2020-04-24 | 가부시키가이샤 에바라 세이사꾸쇼 | Polishing method |
| JP6100541B2 (en) * | 2013-01-30 | 2017-03-22 | 株式会社荏原製作所 | Polishing method |
| JP6093328B2 (en) * | 2013-06-13 | 2017-03-08 | 東京エレクトロン株式会社 | Substrate processing system, substrate processing method, program, and computer storage medium |
| JP6254929B2 (en) * | 2014-11-26 | 2017-12-27 | 東京エレクトロン株式会社 | Measurement processing apparatus, substrate processing system, measurement jig, measurement processing method, and storage medium thereof |
| JP2016127232A (en) * | 2015-01-08 | 2016-07-11 | 株式会社ディスコ | Processing method of wafer |
| JP2018147908A (en) * | 2015-07-27 | 2018-09-20 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing device |
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| TWI768827B (en) * | 2020-04-28 | 2022-06-21 | 大陸商北京爍科精微電子裝備有限公司 | chemical mechanical planarization equipment |
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| JP6877585B2 (en) | 2021-05-26 |
| JPWO2019124031A1 (en) | 2020-12-10 |
| KR102607483B1 (en) | 2023-11-29 |
| TWI790319B (en) | 2023-01-21 |
| KR20200095564A (en) | 2020-08-10 |
| CN111480216B (en) | 2023-09-29 |
| WO2019124031A1 (en) | 2019-06-27 |
| CN111480216A (en) | 2020-07-31 |
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