TW201926633A - Microdevice transfer setup and integration of micro-devices into system substrate - Google Patents

Microdevice transfer setup and integration of micro-devices into system substrate Download PDF

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Publication number
TW201926633A
TW201926633A TW107141925A TW107141925A TW201926633A TW 201926633 A TW201926633 A TW 201926633A TW 107141925 A TW107141925 A TW 107141925A TW 107141925 A TW107141925 A TW 107141925A TW 201926633 A TW201926633 A TW 201926633A
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Taiwan
Prior art keywords
substrate
cassette
microdevice
layer
microdevices
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TW107141925A
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Chinese (zh)
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TWI686919B (en
Inventor
格拉姆瑞札 查吉
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加拿大商弗瑞爾公司
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Publication of TWI686919B publication Critical patent/TWI686919B/en

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Abstract

This disclosure is related to integrating pixelated micro devices into a system substrate.

Description

微裝置傳送設置及微裝置於系統基板中之整合Microdevice transmission settings and integration of microdevices in the system substrate

本發明係關於一種微裝置於一系統基板中之整合。The invention relates to the integration of a micro device in a system substrate.

本發明之一目的係藉由提供將微裝置自一施體基板傳送至一系統基板之一系統及方法而克服先前技術之缺點。An object of the present invention is to overcome the shortcomings of the prior art by providing a system and method for transferring a microdevice from a donor substrate to a system substrate.

此描述之若干實施例係關於微裝置於系統基板中之整合。該系統基板可包括微發光二極體(LED)、有機LED、感測器、固態裝置、積體電路、(微機電系統) MEMS及/或其他電子組件。其他實施例係關於相對於像素陣列圖案化且放置微裝置以最佳化選擇性傳送程序中之微裝置利用。接收基板可為但不限於一印刷電路板(PCB)、薄膜電晶體底板、積體電路基板或(在光學微裝置(諸如LED)之一個情況中)一顯示器之一組件(例如，一驅動電路底板)。微裝置施體基板及受體基板之該圖案化可與不同傳送技術(包含但不限於使用不同機構(例如，靜電傳送頭、彈性體傳送頭)取放或直接傳送機構(諸如雙重功能襯墊)及其他)組合使用。Several embodiments described herein relate to the integration of microdevices in a system substrate. The system substrate may include micro-light emitting diodes (LEDs), organic LEDs, sensors, solid-state devices, integrated circuits, (micro-electro-mechanical systems) MEMS, and / or other electronic components. Other embodiments are related to patterning and positioning microdevices relative to a pixel array to optimize microdevice utilization in a selective transfer process. The receiving substrate may be, but is not limited to, a printed circuit board (PCB), a thin film transistor substrate, an integrated circuit substrate, or (in the case of an optical microdevice such as an LED) a component of a display (e.g., a driving circuit Backplane). The patterning of the microdevice donor substrate and the acceptor substrate can be carried with different transfer technologies (including but not limited to using different mechanisms (e.g., electrostatic transfer head, elastomer transfer head) or direct transfer mechanisms (such as dual-function pad ) And others).

根據一項實施例，提供一種將複數個微裝置傳送至一受體基板中之方法。該方法包括：將該複數個微裝置配置於一或多個匣中；將該一或多個匣與具有至少一個對準標記之一模板對準；將該一或多個匣與該模板接合；將該模板與該受體基板對準；及將該複數個微裝置自該模板傳送至該受體基板中。According to one embodiment, a method is provided for transferring a plurality of microdevices into an acceptor substrate. The method includes: arranging the plurality of micro-devices in one or more cassettes; aligning the one or more cassettes with a template having at least one alignment mark; and engaging the one or more cassettes with the template ; Aligning the template with the acceptor substrate; and transferring the plurality of microdevices from the template into the acceptor substrate.

根據另一實施例，提供一種傳送設置。該傳送設置包括：一模板，其固持充填有微裝置之至少一個匣；及該模板上之一接合設備，其協助藉由一傳送力之該等微裝置自該至少一個匣至一受體基板之傳送。According to another embodiment, a transmission setting is provided. The transfer setup includes: a template holding at least one cassette filled with microdevices; and a bonding device on the template that assists the microdevices with a transfer force from the at least one cassette to a receiver substrate Its transmission.

根據又一實施例，提供一種將複數個微裝置傳送至一系統基板中之方法。該方法包括：將該複數個微裝置配置於該系統基板中之一或多個匣上；選擇各匣中之一或多個可傳送微裝置組；識別各可傳送微裝置組中之有缺陷微裝置之一數目；且同時調整該等有缺陷微裝置至該系統基板中之傳送。According to yet another embodiment, a method for transferring a plurality of micro-devices to a system substrate is provided. The method includes: disposing the plurality of micro-devices on one or more cassettes in the system substrate; selecting one or more transportable micro-device groups in each cassette; and identifying defects in each transportable micro-device group One of the number of micro-devices; and simultaneously adjusting the transmission of the defective micro-devices into the system substrate.

相關申請案之交叉參考Cross-reference to related applications

此申請案主張2017年11月23日申請之加拿大申請案第2,986,503號之優先權，該案之全部內容以引用的方式併入本文中。This application claims priority from Canadian Application No. 2,986,503, filed on November 23, 2017, the entire contents of which are incorporated herein by reference.

雖然結合各種實施例及實例描述本教示，但本教示不旨在限於此等實施例。相反，如熟習此項技術者將瞭解到，本教示涵蓋各種替代例及等效物。Although the teachings are described in connection with various embodiments and examples, the teachings are not intended to be limited to such embodiments. In contrast, as those skilled in the art will appreciate, this teaching covers various alternatives and equivalents.

圖1A繪示包含具有一側向功能結構之一施體基板110之一實施例，該側向功能結構包括一底部平坦或薄板導電層112、一功能層(例如，發光量子阱) 114及一頂部像素化導電層116。導電層112及116可包括摻雜半導體材料或其他適當類型之導電層。頂部導電層116可包括若干不同層。在一項實施例中，如在圖1B中展示，一電流散佈層118經沈積於導電層116之頂部上。電流散佈層118可經圖案化。在一項實施例中，可透過剝離實現圖案化。在另一情況中，可透過光微影實現圖案化。在一實施例中，一電介質層可首先沈積且圖案化且接著用作用於圖案化電流散佈層118之一硬遮罩。在圖案化電流散佈層118之後，頂部導電層116亦可經圖案化，從而形成一像素結構。在圖案化電流散佈層118及/或導電層116之後，一最終電介質層120可經沈積於經圖案化導電層116及電流散佈層118上方及之間，如在圖1C中展示。電介質層120亦可經圖案化以如圖1D中展示般產生開口130，從而提供對經圖案化電流散佈層118之接取。亦可提供額外整平層128以整平上表面，如在圖1E中展示。FIG. 1A illustrates an embodiment including a donor substrate 110 having a lateral functional structure. The lateral functional structure includes a flat or thin conductive layer 112 at the bottom, a functional layer (eg, a light-emitting quantum well) 114, and an Top pixelated conductive layer 116. The conductive layers 112 and 116 may include doped semiconductor materials or other suitable types of conductive layers. The top conductive layer 116 may include several different layers. In one embodiment, as shown in FIG. 1B, a current spreading layer 118 is deposited on top of the conductive layer 116. The current spreading layer 118 may be patterned. In one embodiment, patterning can be achieved by peeling. In another case, patterning can be achieved through light lithography. In one embodiment, a dielectric layer may be deposited and patterned first and then used as a hard mask for patterning the current spreading layer 118. After patterning the current spreading layer 118, the top conductive layer 116 may also be patterned to form a pixel structure. After patterning the current spreading layer 118 and / or the conductive layer 116, a final dielectric layer 120 may be deposited over and between the patterned conductive layer 116 and the current spreading layer 118, as shown in FIG. 1C. The dielectric layer 120 may also be patterned to create openings 130 as shown in FIG. 1D, thereby providing access to the patterned current spreading layer 118. An additional leveling layer 128 may also be provided to level the upper surface, as shown in FIG. 1E.

如在圖1E中展示，一襯墊132經沈積於各開口130中之電流散佈層118之頂部上。具有襯墊132之經開發結構經接合至具有襯墊154之系統基板150，如在圖1F中展示。系統基板150中之襯墊154可藉由一電介質層156分離。其他層152 (諸如電路、平坦化層、導電跡線)可在系統基板襯墊154與系統基板150之間。系統基板襯墊154至襯墊132之接合可透過熔合、陽極、熱壓、共晶或黏著接合實現。系統與側向裝置之間亦可沈積一或多個其他層。As shown in FIG. 1E, a pad 132 is deposited on top of the current spreading layer 118 in each opening 130. The developed structure with the pad 132 is bonded to the system substrate 150 with the pad 154, as shown in FIG. 1F. The pads 154 in the system substrate 150 can be separated by a dielectric layer 156. Other layers 152 (such as circuits, planarization layers, conductive traces) may be between the system substrate pad 154 and the system substrate 150. The bonding of the system substrate gasket 154 to the gasket 132 may be achieved by fusion, anode, hot pressing, eutectic, or adhesive bonding. One or more other layers may also be deposited between the system and the lateral device.

如在圖1G中展示，施體基板110可自側向功能裝置(例如，導電層112)移除。導電層112可經薄化及/或部分或完全圖案化。一反射層或黑色基質170可經沈積且圖案化以覆蓋像素之間的導電層112上之區域。在此階段之後，其他層可取決於裝置之功能沈積且圖案化。例如，一色彩轉換層可經沈積以便調整藉由側向裝置及系統基板150中之像素產生之光之色彩。一或多個彩色濾光片亦可在色彩轉換層之前及/或之後沈積。此等裝置中之電介質層(例如，電介質層120)可為有機的(諸如聚醯胺)或無機的(諸如SiN、SiO2 、Al2 O3 等等)。沈積可使用不同程序實現，諸如電漿增強型化學氣相沈積(PECVD)、原子層沈積(ALD)及其他方法。各層可為一個沈積材料或分開或一起沈積之不同材料之一組合物。接合材料可僅沈積為施體基板110之襯墊132或系統基板襯墊154之部分。針對一些層亦可存在一些退火程序。例如，電流散佈層118可取決於材料而退火。在一個實例中，電流散佈層118可在500°C下退火達10分鐘。退火亦可在不同步驟之後實現。As shown in FIG. 1G, the donor substrate 110 may be removed from a lateral functional device (eg, the conductive layer 112). The conductive layer 112 may be thinned and / or partially or fully patterned. A reflective layer or black matrix 170 may be deposited and patterned to cover areas on the conductive layer 112 between pixels. After this stage, other layers may be deposited and patterned depending on the function of the device. For example, a color conversion layer may be deposited to adjust the color of light generated by the lateral device and pixels in the system substrate 150. One or more color filters may also be deposited before and / or after the color conversion layer. In such devices the dielectric layer (e.g., dielectric layer 120) may be organic (such as polyamides) or inorganic (such as SiN, SiO 2, Al 2 O 3 , etc.). Deposition can be achieved using different procedures, such as plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and other methods. Each layer may be a deposited material or a combination of different materials deposited separately or together. The bonding material may be deposited only as part of the pad 132 or the system substrate pad 154 of the donor substrate 110. There may also be some annealing procedures for some layers. For example, the current spreading layer 118 may be annealed depending on the material. In one example, the current spreading layer 118 may be annealed at 500 ° C. for 10 minutes. Annealing can also be achieved after different steps.

圖2A繪示具有側向功能結構之一施體基板210之一例示性實施例，該側向功能結構包括一第一頂部平坦或薄板導電層212、功能層(例如，發光層) 214、一第二底部像素化導電層216、一電流散佈層218及/或一接合襯墊層232。圖2B繪示形成一像素結構之層216、218、232之所有或一者之圖案化。導電層212及216可包括包含一高度摻雜半導體層之複數個層。一些層228 (例如，電介質)可用於圖案化層216、218及232之間以整平側向功能結構之上表面，如在圖2C中展示。層228亦可進行其他功能，諸如黑色基質。具有襯墊232之經開發結構經接合至具有基板襯墊254之一系統基板250，如在圖2D中展示。系統基板中之襯墊254亦可藉由一電介質層256分離。其他層252 (諸如電路、平坦化層及導電跡線)可在系統基板襯墊254與系統基板250之間。(例如)可透過熔合、陽極、熱壓、共晶或黏著接合實現接合。系統與側向裝置之間亦可沈積其他層。FIG. 2A illustrates an exemplary embodiment of a donor substrate 210 having a lateral functional structure, which includes a first flat top or thin plate conductive layer 212, a functional layer (eg, a light emitting layer) 214, a The second bottom pixelated conductive layer 216, a current spreading layer 218, and / or a bonding pad layer 232. FIG. 2B illustrates the patterning of all or one of the layers 216, 218, 232 forming a pixel structure. The conductive layers 212 and 216 may include a plurality of layers including a highly doped semiconductor layer. Some layers 228 (eg, dielectric) can be used between the patterned layers 216, 218, and 232 to level the upper surface of the lateral functional structure, as shown in FIG. 2C. The layer 228 may also perform other functions, such as a black matrix. The developed structure with a pad 232 is bonded to one of the system substrates 250 with a substrate pad 254, as shown in FIG. 2D. The pad 254 in the system substrate can also be separated by a dielectric layer 256. Other layers 252, such as circuits, planarization layers, and conductive traces, may be between the system substrate pad 254 and the system substrate 250. Bonding can be achieved, for example, by fusion, anode, hot pressing, eutectic, or adhesive bonding. Other layers can also be deposited between the system and the lateral device.

施體基板210可自側向功能裝置移除。導電層212可經薄化及/或圖案化。一反射層或黑色基質270可經沈積且圖案化以覆蓋像素之間的導電層212上之區域。在此階段之後，其他層可取決於裝置之功能沈積且圖案化。例如，一色彩轉換層可經沈積以便調整藉由側向裝置及系統基板250中之像素產生之光之色彩。一或多個彩色濾光片亦可在色彩轉換層之前及/或之後沈積。此等裝置中之電介質層(例如，228及256)可為有機的(諸如聚醯胺)或無機的(諸如SiN、SiO2 、Al2 O3 等等)。沈積可使用不同程序實現，諸如電漿增強型化學氣相沈積(PECVD)、原子層沈積(ALD)及其他方法。各層可為一個沈積材料或分開或一起沈積之不同材料之一組合物。接合襯墊232之材料可沈積為施體基板210之襯墊232或系統基板襯墊254之部分。針對一些層亦可存在一些退火程序。例如，電流散佈層218可取決於材料而退火。在一實例中，其可在500℃下退火達10分鐘。退火亦可在不同步驟之後實現。The donor substrate 210 can be removed from the lateral functional device. The conductive layer 212 may be thinned and / or patterned. A reflective layer or black matrix 270 may be deposited and patterned to cover areas on the conductive layer 212 between pixels. After this stage, other layers may be deposited and patterned depending on the function of the device. For example, a color conversion layer may be deposited to adjust the color of light generated by the lateral device and pixels in the system substrate 250. One or more color filters may also be deposited before and / or after the color conversion layer. In such devices the dielectric layer (e.g., 228 and 256) may be organic (such as polyamides) or inorganic (such as SiN, SiO 2, Al 2 O 3 , etc.). Deposition can be achieved using different procedures, such as plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and other methods. Each layer may be a deposited material or a combination of different materials deposited separately or together. The material of the bonding pad 232 may be deposited as the pad 232 of the donor substrate 210 or as part of the system substrate pad 254. There may also be some annealing procedures for some layers. For example, the current spreading layer 218 may be annealed depending on the material. In one example, it can be annealed at 500 ° C for 10 minutes. Annealing can also be achieved after different steps.

在圖3A中展示之另一實施例中，在一施體基板310上開發一台面結構。微裝置結構藉由蝕刻穿過不同層(例如，一第一底部導電層312、功能層314及一第二頂部導電層316)形成。一頂部接觸件332可在頂部導電層316之頂部上之蝕刻之前或之後沈積。在另一情況中，可使用一多層接觸件332。在此情況中，接觸層332之部分可在蝕刻之前沈積，且其等之部分可在蝕刻之後沈積。例如，可首先沈積透過退火與頂部導電層316產生歐姆接觸之初始接觸層。在一個實例中，初始接觸層可為金及鎳。其他層372 (諸如電介質)或MIS (金屬絕緣體結構)亦可用於台面結構之間以隔離及/或絕緣各結構。在形成微裝置之後，可沈積一填料層374 (諸如聚醯胺)，如在圖3B中展示。若僅選定微裝置在接下來的步驟期間被傳送至匣(臨時)基板376，則亦可圖案化填料層374。填料層374亦可在傳送裝置至一臨時基板之後沈積。填料層374可充當微裝置之外殼。在傳送之前使用填料層374的情況下，剝離程序可為更可靠的。In another embodiment shown in FIG. 3A, a mesa structure is developed on a donor substrate 310. The microdevice structure is formed by etching through different layers (for example, a first bottom conductive layer 312, a functional layer 314, and a second top conductive layer 316). A top contact 332 may be deposited before or after etching on top of the top conductive layer 316. In another case, a multilayer contact 332 may be used. In this case, a portion of the contact layer 332 may be deposited before the etching, and a portion thereof may be deposited after the etching. For example, an initial contact layer that first makes an ohmic contact with the top conductive layer 316 through annealing can be deposited first. In one example, the initial contact layer may be gold and nickel. Other layers 372 (such as a dielectric) or MIS (Metal Insulator Structure) may also be used between the mesa structures to isolate and / or insulate the structures. After the microdevice is formed, a filler layer 374 (such as polyamide) can be deposited, as shown in FIG. 3B. The filler layer 374 can also be patterned if only selected microdevices are transferred to the cassette (temporary) substrate 376 during the next steps. The filler layer 374 may also be deposited after transferring the device to a temporary substrate. The filler layer 374 may serve as a housing for the microdevice. In the case where the filler layer 374 is used before transfer, the peeling procedure may be more reliable.

裝置經接合至一臨時基板(匣) 376。接合之源可變化且(例如)可包括以下之一或多者：靜電、電磁、黏著、或凡得瓦(Van Der Waals)力或熱接合。在熱接合的情況中，可使用一基板接合層378，其具有一熔化溫度T1。接合層378可為導電的或可包括一導電層及一接合層，該接合層可為黏著、熱或光輔助接合。導電層可用於對基板376上之裝置加偏壓以用於識別缺陷且特性化效能。此結構可用於本文呈現之其他實施例。為適應某些表面輪廓不均勻性，可在接合程序期間施加壓力。可移除臨時基板376或施體基板310且將裝置保留於其等之任一者上。本文中基於將裝置保留於臨時基板376中而解釋程序，然而，可在裝置保留於施體基板310上時使用類似步驟。在此階段之後，可對微裝置實現一額外程序(諸如使裝置薄化、在底部導電層312上產生一接觸接合380及移除填料層374)。裝置可被傳送至一系統基板390，如在圖3D及圖3E中展示。可使用不同技術實現傳送。在一個情況中，一熱接合用於傳送。在此情況中，系統基板接觸襯墊382上之接觸接合層380具有一熔點T2，其中T2＞T1。此處，高於T2之溫度將使襯墊382上之基板接合層378及接觸接合層380兩者熔化。The device is bonded to a temporary substrate (box) 376. The source of bonding may vary and may include, for example, one or more of the following: electrostatic, electromagnetic, adhesive, or Van Der Waals forces or thermal bonding. In the case of thermal bonding, a substrate bonding layer 378 may be used, which has a melting temperature T1. The bonding layer 378 may be conductive or may include a conductive layer and a bonding layer, and the bonding layer may be an adhesive, thermal or light assisted bonding. The conductive layer can be used to bias a device on the substrate 376 for identifying defects and characterizing performance. This structure can be used in other embodiments presented herein. To accommodate some surface profile inhomogeneities, pressure can be applied during the bonding procedure. The temporary substrate 376 or the donor substrate 310 may be removed and the device retained on any of them. The procedure is explained herein based on retaining the device in the temporary substrate 376, however, similar steps may be used when the device is retained on the donor substrate 310. After this stage, an additional procedure can be implemented for the microdevice (such as thinning the device, creating a contact bond 380 on the bottom conductive layer 312, and removing the filler layer 374). The device may be transferred to a system substrate 390, as shown in FIGS. 3D and 3E. Transmission can be achieved using different technologies. In one case, a thermal junction is used for transmission. In this case, the contact bonding layer 380 on the system substrate contact pad 382 has a melting point T2, where T2> T1. Here, a temperature higher than T2 will melt both the substrate bonding layer 378 and the contact bonding layer 380 on the pad 382.

在一後續步驟中，溫度下降至T1與T2之間。此時，在接觸接合層380固化，但基板接合層378仍熔化時，裝置與接觸接合層380接合至系統基板390。因此，移動臨時基板376將會將微裝置保留於系統基板390上，如在圖3E中展示。此可藉由應用局部加熱至選定襯墊382而係選擇性的。同樣地，一全域溫度(例如，藉由將基板376及390放置於一爐中且在其中藉由升高其中之整個氣氛而進行該程序)可除了局部加熱以外用於改良傳送速度。此處，臨時基板376或系統基板390上之全域溫度可使溫度接近(例如，5°C至10°C)接觸接合層380之熔點，且局部溫度可用於熔化對應於選定裝置之接觸接合層380及基板接合層378。在另一情況中，溫度可升高至接近(例如，5°C至10°C)基板接合層378之熔點(高於接觸接合層378之熔點)且自襯墊382通過裝置之溫度傳送熔化接觸加熱襯墊382之裝置之基板接合層380之選定區域。In a subsequent step, the temperature drops between T1 and T2. At this time, when the contact bonding layer 380 is cured but the substrate bonding layer 378 is still melted, the device and the contact bonding layer 380 are bonded to the system substrate 390. Therefore, moving the temporary substrate 376 will leave the microdevice on the system substrate 390, as shown in FIG. 3E. This can be selective by applying local heating to the selected pad 382. Likewise, a global temperature (for example, by placing the substrates 376 and 390 in a furnace and performing the procedure by raising the entire atmosphere therein) can be used to improve the transfer speed in addition to local heating. Here, the global temperature on the temporary substrate 376 or the system substrate 390 can bring the temperature close (for example, 5 ° C to 10 ° C) to the melting point of the contact bonding layer 380, and the local temperature can be used to melt the contact bonding layer corresponding to the selected device. 380 和 Substrate bonding layer 378. In another case, the temperature can be raised to near (e.g., 5 ° C to 10 ° C) the melting point of the substrate bonding layer 378 (above the melting point of the contact bonding layer 378) and the melting transfer from the pad 382 through the device's temperature Selected areas of the substrate bonding layer 380 of the device contacting the heating pad 382.

在圖3F中展示一熱分佈之一實例，其中熔化溫度Tr熔化接觸接合層380及基板接合層378兩者且固化溫度Ts固化與接合襯墊382之接觸接合層380，而基板接合層378仍熔化。熔化可為部分的或至少使接合層足夠柔軟以釋放微裝置或啟動形成一合金之程序。此處，組合或獨立之其他力亦可用於將裝置固持於接合襯墊382上。在另一情況中，溫度分佈可藉由施加通過裝置之電流而產生。由於接觸阻力在接合之前更高，故跨接合襯墊382及裝置消耗之電力將為高的，從而熔化接觸接合層380及基板接合層378兩者。隨著接合形成，阻力將下降且電力消耗亦將下降，藉此降低局部溫度。通過襯墊382之電壓或電流可用作接合品質及何時停止程序之指標。施體基板310及臨時基板376可係相同或不同的。在裝置被傳送至一系統基板390之後，可實現不同程序步驟。此等額外處理步驟可為平坦化、電極沈積、色彩轉換沈積及圖案化、彩色濾光片沈積及圖案化等。An example of a thermal profile is shown in FIG. 3F, in which the melting temperature Tr melts both the contact bonding layer 380 and the substrate bonding layer 378 and the curing temperature Ts solidifies the contact bonding layer 380 with the bonding pad 382, while the substrate bonding layer 378 remains melt. Melting can be partial or at least make the bonding layer sufficiently soft to release the microdevice or initiate the process of forming an alloy. Here, other forces, combined or independent, may also be used to hold the device on the bonding pad 382. In another case, the temperature distribution may be generated by applying a current through the device. Because the contact resistance is higher before bonding, the power consumed across the bonding pad 382 and the device will be high, melting both the contact bonding layer 380 and the substrate bonding layer 378. As the joint is formed, resistance will decrease and power consumption will decrease, thereby reducing local temperature. The voltage or current through the pad 382 can be used as an indicator of the quality of the joint and when to stop the process. The donor substrate 310 and the temporary substrate 376 may be the same or different. After the device is transferred to a system substrate 390, different program steps can be implemented. These additional processing steps can be planarization, electrode deposition, color conversion deposition and patterning, color filter deposition and patterning, and so on.

在另一實施例中，自匣基板376釋放微裝置之溫度在合金開始形成時增大。在此情況中，溫度可在接合合金形成於受體基板390之接合襯墊382上時保持恆定，且接合層固化，藉此將微裝置保持於受體基板390上之適當位置中。同時，經連接至選定微裝置之匣376上之接合層378仍熔化(或足夠柔軟)以釋放裝置。此處，形成合金所需之材料之部分可在微裝置上且其他部分沈積於接合襯墊382上。In another embodiment, the temperature at which the microdevice is released from the cassette substrate 376 increases as the alloy begins to form. In this case, the temperature may be kept constant when the bonding alloy is formed on the bonding pad 382 of the receptor substrate 390, and the bonding layer is cured, thereby holding the microdevice in place on the receptor substrate 390. At the same time, the bonding layer 378 on the cassette 376 connected to the selected microdevice is still melted (or soft enough) to release the device. Here, a portion of the material required to form the alloy may be on the microdevice and other portions are deposited on the bonding pad 382.

在另一實施例中，填料層374可沈積於匣基板376之頂部上以形成一組合填料/接合層374/378。來自施體基板310之微裝置可接著被推至聚合物填料層374中。微裝置可接著選擇性或大體與施體基板310分離。聚合物接合層378/378可在裝置與施體基板310分離之前或之後固化。可針對一個類型(經埋設於該層中且與其等之施體310分離之微裝置)產生尤其可在多個不同裝置整合於匣基板374中之情況下圖案化之聚合物接合層37/378。接著，針對下一類型之微裝置沈積且圖案化另一聚合物接合層378。接著，第二微裝置可經埋設於相關聯層374中。在所有情況中，聚合物接合層374可覆蓋微裝置之部分或整個裝置。In another embodiment, a filler layer 374 may be deposited on top of the cassette substrate 376 to form a combined filler / bond layer 374/378. The microdevice from the donor substrate 310 may then be pushed into the polymer filler layer 374. The microdevice may then be selectively or substantially separated from the donor substrate 310. The polymer bonding layer 378/378 may be cured before or after the device is separated from the donor substrate 310. A polymer bonding layer 37/378 that can be patterned for one type (via a microdevice buried in this layer and separated from its donor 310), can be patterned especially when multiple different devices are integrated in the cassette substrate 374 . Next, another polymer bonding layer 378 is deposited and patterned for the next type of microdevice. The second microdevice may then be buried in the associated layer 374. In all cases, the polymer bonding layer 374 may cover a portion or the entire device of the microdevice.

增加溫度之另一方法可為使用微波或光。因此，一層可經沈積於接合襯墊382上；襯墊382之部分上；微裝置上；或吸收微波或光且局部加熱微裝置之匣376之部分上。或者，匣376及/或受體基板390可包含一加熱元件，該加熱元件可選擇性地及/或全域地加熱微裝置。Another method of increasing the temperature may be using microwave or light. Thus, a layer may be deposited on the bonding pad 382; on a portion of the pad 382; on a microdevice; or on a portion of the cassette 376 that absorbs microwave or light and locally heats the microdevice. Alternatively, the cassette 376 and / or the receptor substrate 390 may include a heating element that can selectively and / or globally heat the microdevice.

其他方法亦可用於將微裝置與臨時基板376分離，諸如化學、光學或機械力。在一個實例中，微裝置可藉由一犧牲層覆蓋，該犧牲層可藉由化學、光學、熱或機械力與臨時基板376脫離。脫離程序可為選擇性的或全域的。在全域脫離之情況下，至系統基板390之傳送係選擇性的。若裝置與臨時基板(匣) 376之脫離程序係選擇性的，則至系統基板390之傳送力可選擇性或全域地施加。Other methods may also be used to separate the microdevice from the temporary substrate 376, such as chemical, optical, or mechanical forces. In one example, the microdevice may be covered by a sacrificial layer, which may be separated from the temporary substrate 376 by chemical, optical, thermal, or mechanical forces. Disengagement procedures can be selective or global. In the case of global disconnection, the transmission to the system substrate 390 is selective. If the disengagement procedure between the device and the temporary substrate (cassette) 376 is selective, the transmission force to the system substrate 390 can be applied selectively or globally.

自匣376至受體基板390之傳送之程序可基於不同機構。在一個情況中，匣376具有接合材料，該等接合材料在存在一光的情況下在同一光固化裝置至受體基板之接合的同時釋放裝置。The procedure for the transfer from the cassette 376 to the receiver substrate 390 may be based on different mechanisms. In one case, the cassette 376 has a bonding material that releases the device at the same time as the bonding of the same light curing device to the receptor substrate in the presence of a light.

在另一實施例中，用於固化裝置至受體基板390之接合層380之溫度將裝置自匣376釋放。In another embodiment, the temperature of the bonding layer 380 used to cure the device to the receptor substrate 390 releases the device from the cassette 376.

在另一情況中，電流或電壓將裝置至施體基板310之接合層380固化。同一電流或電壓可將裝置自匣376釋放。此處，釋放可依據由電流產生之壓電或溫度。In another case, the current or voltage cures the bonding layer 380 of the device to the donor substrate 310. The same current or voltage can release the device from the cassette 376. Here, the release can depend on the piezoelectricity or temperature generated by the current.

在另一方法中，在固化裝置至受體基板390之接合之後，接合裝置被拉出匣376。此處，將裝置固持至匣376之力小於將裝置接合至受體基板390之力。In another method, after the bonding of the curing device to the receptor substrate 390, the bonding device is pulled out of the cassette 376. Here, the force to hold the device to the cassette 376 is smaller than the force to bond the device to the receiver substrate 390.

在另一方法中，匣376具有通孔，該等通孔可用於將裝置推出匣376至受體基板390中。該推動可使用不同構件實現，諸如使用微棒陣列或氣動實現。在氣動結構的情況中，選定裝置可藉由氣動力推動至受體基板390或選定裝置之拉力斷開。在微棒之情況中，藉由使微棒穿過與選定裝置相關聯之通孔而將選定裝置移向受體基板390。微棒可具有不同溫度來促進傳送。在完成選定裝置之傳送之後，微棒縮回。相同棒與另一微裝置組之通孔對準或與新的選定微裝置對準之一組用於傳送新的裝置。In another approach, the cassette 376 has through holes that can be used to push the device out of the cassette 376 into the receiver substrate 390. This pushing can be achieved using different components, such as using a microrod array or pneumatically. In the case of a pneumatic structure, the selected device can be disconnected by the pulling force of the aerodynamic force to the receiver substrate 390 or the selected device. In the case of a microrod, the selected device is moved toward the receiver substrate 390 by passing the microrod through a through hole associated with the selected device. Microrods can have different temperatures to facilitate delivery. After completing the transfer of the selected device, the microrod retracts. The same rod is aligned with the through hole of another microdevice group or one of the newly selected microdevices is used to transfer a new device.

在一項實施例中，匣376可經拉伸以增加匣376中之裝置節距以便增加處理量。例如，若匣376為1x1 cm2 ，具有5微米裝置節距，且受體基板390 (例如，顯示器)具有50微米像素節距，則匣376可一次填充200x200 (40,000)個像素。然而，若匣376被拉伸至2x2 cm2 ，具有10微米裝置節距，則匣376可一次填充400x400 (160,000)個像素。在另一情況中，匣376可經拉伸使得匣376上之至少兩個微裝置變得與一受體基板中之兩個對應位置對準。可在一或多個方向上實現拉伸。匣基板376可包括一可拉伸聚合物或由一可拉伸聚合物構成。微裝置亦經緊固於另一層中或與匣基板376相同之層中。In one embodiment, the cassette 376 may be stretched to increase the pitch of the devices in the cassette 376 to increase throughput. For example, if the cassette 376 is 1x1 cm 2 with a 5 micron device pitch and the receiver substrate 390 (eg, a display) has a 50 micron pixel pitch, the cassette 376 can fill 200x200 (40,000) pixels at a time. However, if the cassette 376 is stretched to 2x2 cm 2 with a 10 micron device pitch, the cassette 376 can fill 400x400 (160,000) pixels at a time. In another case, the cassette 376 may be stretched such that at least two microdevices on the cassette 376 become aligned with two corresponding positions in a receptor substrate. Stretching can be achieved in one or more directions. The cassette substrate 376 may include or consist of a stretchable polymer. The microdevice is also fastened in another layer or the same layer as the cassette substrate 376.

上文描述之方法之一組合亦可用於微裝置自匣376至受體基板390之傳送程序。A combination of the methods described above can also be used for the transfer procedure of the microdevice from the cassette 376 to the receiver substrate 390.

在匣(臨時基板) 376之開發期間，可測試裝置以識別不同缺陷及裝置效能。在一項實施例中，在分離頂部電極之前，可加偏壓於該等裝置且測試該等裝置。在其中裝置係發射類型之情況中，一攝影機(或感測器)可用於提取缺陷及裝置效能。在其中裝置係感測器之情況中，可施加刺激至該等裝置以提取缺陷及效能。在另一實施例中，頂部電極332可經圖案化以分組用於測試，隨後圖案化至個別裝置。在另一實例中，超過一個裝置之間的一臨時共同電極經沈積或耦合至裝置以提取裝置效能及/或提取缺陷。During the development of the cassette (temporary substrate) 376, the device can be tested to identify different defects and device performance. In one embodiment, the devices can be biased and tested before separating the top electrode. In the case where the device is a transmission type, a camera (or sensor) can be used to extract defects and device performance. In the case where the devices are sensors, stimuli can be applied to these devices to extract defects and performance. In another embodiment, the top electrodes 332 may be patterned for grouping for testing, and then patterned to individual devices. In another example, a temporary common electrode between more than one device is deposited or coupled to the device to extract device performance and / or extract defects.

上文關於圖3A至圖3D描述之方法(包含但不限於分離、形成填料層、填料層之不同作用、測試及其他結構)可用於包含下文描述之方法之其他結構。The methods described above with respect to FIGS. 3A to 3D (including but not limited to separation, formation of filler layers, different functions of the filler layers, testing, and other structures) can be used for other structures including the methods described below.

此處論述用於將微裝置自匣376 (臨時基板)傳送至受體基板390之方法可應用於此處呈現之匣及受體基板之所有組態。The method discussed here for transferring a microdevice from cassette 376 (temp substrate) to receiver substrate 390 can be applied to all configurations of cassettes and receiver substrates presented here.

可開發施體基板310上之裝置以在背離施體基板310之同一側上具有兩個接觸件332及380。在此實施例中，匣376上之導電層可經圖案化以獨立加偏壓於裝置之兩個接觸件332及380。在一個情況中，裝置可直接自匣基板376傳送至受體基板390。此處，接觸件332及380可不直接接合至受體基板390，即，受體基板390不需要具有特殊襯墊。在此情況中，導電層經沈積且圖案化以將接觸件332及380連接至受體基板390中之恰當連接。在另一實施例中，在傳送至受體基板390之前，裝置可首先自匣376傳送至一臨時基板。此處，接觸件332及380可直接接合至受體基板襯墊382。可在匣376中或在臨時基板中測試裝置。The device on the donor substrate 310 can be developed to have two contacts 332 and 380 on the same side facing away from the donor substrate 310. In this embodiment, the conductive layer on the cassette 376 can be patterned to independently bias the two contacts 332 and 380 of the device. In one case, the device may be transferred directly from the cassette substrate 376 to the receiver substrate 390. Here, the contacts 332 and 380 may not be directly bonded to the receiver substrate 390, that is, the receiver substrate 390 does not need to have a special pad. In this case, the conductive layer is deposited and patterned to connect the contacts 332 and 380 to the proper connections in the acceptor substrate 390. In another embodiment, the device may first be transferred from the cassette 376 to a temporary substrate before being transferred to the receiver substrate 390. Here, the contacts 332 and 380 may be directly bonded to the receptor substrate pad 382. The device can be tested in the cassette 376 or in a temporary substrate.

在圖4A中展示之另一實施例中，在具有藉由蝕刻穿過不同層(例如，一第一底部導電層412、功能層(例如發光) 414及一第二頂部導電層416)形成之微裝置結構之一施體基板(如前文描述)上開發一台面結構。一頂部接觸件432可在頂部導電層416之頂部上之蝕刻之前或之後沈積。In another embodiment shown in FIG. 4A, the layer is formed by etching through different layers (for example, a first bottom conductive layer 412, a functional layer (for example, light emitting) 414, and a second top conductive layer 416). A mesa structure is developed on a donor substrate (as described above) of one of the microdevice structures. A top contact 432 may be deposited before or after etching on top of the top conductive layer 416.

一臨時基板476包含複數個溝槽476-2，該複數個溝槽476-2最初使用填料材料(例如，軟材料(諸如聚合物)或固體材料(諸如SiO2 、SiN等) )充填。溝槽476-2在表面及/或基板接合層478下方。裝置被傳送至溝槽476-2之頂部上之臨時基板476，且裝置包含一接觸襯墊432。同樣地，各微裝置可包含圍繞各微裝置用於隔離及/或保護之其他鈍化層及/或MIS層472。裝置之間的空間可使用充填材料474充填。在後處理裝置之後，另一下接觸襯墊480可經沈積於裝置之相對表面上。接觸層412可在下接觸襯墊480之沈積之前薄化。充填材料474可接著經移除且溝槽可藉由各種適當方法(諸如，例如化學蝕刻或蒸發)傾空以引起或促進接合層478之表面及/或選定區段之釋放。如上文之前描述之一類似程序可用於將裝置傳送至系統(受體)基板490。另外，在另一實施例中，自襯墊432施加之力(例如，一推力或一拉力)可使排空溝槽476-2上方之表面及/或接合層478破裂，同時使未選定台面結構維持附接至臨時基板。此力亦可將裝置自臨時基板476釋放裝置，如在圖4B及圖4C中展示。可選擇溝槽476-2之深度以管理一些微裝置高度差。例如，若高度差為H，則溝槽之深度可大於H。A temporary substrate 476 includes a plurality of grooves 476-2, 476-2 of the plurality of first grooves using filler material (e.g., soft material (such as polymers) or a solid material (such as SiO 2, SiN, etc.)) is filled. The trench 476-2 is under the surface and / or the substrate bonding layer 478. The device is transferred to a temporary substrate 476 on top of the trench 476-2, and the device includes a contact pad 432. As such, each microdevice may include other passivation layers and / or MIS layers 472 surrounding each microdevice for isolation and / or protection. The space between the devices may be filled with a filling material 474. After post-processing the device, another lower contact pad 480 may be deposited on the opposite surface of the device. The contact layer 412 may be thinned before the deposition of the lower contact pad 480. The filling material 474 may then be removed and the trenches may be emptied by various suitable methods, such as, for example, chemical etching or evaporation, to cause or facilitate the release of the surface and / or selected sections of the bonding layer 478. A similar procedure as previously described above can be used to transfer the device to the system (receiver) substrate 490. In addition, in another embodiment, a force (e.g., a push or a pull) applied from the pad 432 can rupture the surface above the drain groove 476-2 and / or the bonding layer 478, while causing an unselected mesa The structure remains attached to the temporary substrate. This force can also release the device from the temporary substrate 476, as shown in FIGS. 4B and 4C. The depth of the groove 476-2 can be selected to manage some microdevice height differences. For example, if the height difference is H, the depth of the trench may be greater than H.

可開發基板310上之裝置以在背離基板310之同一側上具有兩個接觸件432及480。在此情況中，476上之導電層可經圖案化以獨立加偏壓於裝置之兩個接觸件。在一個情況中，裝置可直接自匣基板476傳送至受體基板。此處，接觸件432及480不會直接接合至受體基板(受體基板不需要具有特殊襯墊)。在此情況中，導電層經沈積且圖案化以將接觸件432及380連接至受體基板中之恰當連接。在另一情況中，在傳送至受體基板之前，裝置可首先自匣476傳送至一臨時基板。此處，接觸件432及480可直接接合至受體基板襯墊482。可在匣中或在臨時基板中測試裝置。The device on the substrate 310 can be developed to have two contacts 432 and 480 on the same side facing away from the substrate 310. In this case, the conductive layer on 476 can be patterned to independently bias the two contacts of the device. In one case, the device can be transferred directly from the cassette substrate 476 to the receiver substrate. Here, the contacts 432 and 480 are not directly bonded to the receiver substrate (the receiver substrate does not need to have a special pad). In this case, the conductive layer is deposited and patterned to connect the contacts 432 and 380 to the proper connections in the acceptor substrate. In another case, the device may first be transferred from the cassette 476 to a temporary substrate before being transferred to the acceptor substrate. Here, the contacts 432 and 480 may be directly bonded to the receptor substrate pad 482. The device can be tested in a cassette or in a temporary substrate.

在圖5A中展示之另一實施例中，在具有藉由蝕刻穿過不同層(例如，一第一底部導電層512、功能層(例如發光) 514及一第二頂部導電層516)形成之微裝置結構之一施體基板510 (如前文描述)上開發一台面結構。一頂部接觸襯墊532可在頂部導電層516之頂部上之蝕刻之前或之後沈積。同樣地，各微裝置可包含圍繞各微裝置用於隔離及/或保護之其他鈍化層及/或MIS層572。在此實施例中，裝置可具備不同錨，藉此在裝置之剝離之後，錨將裝置固持於施體基板510。剝離可藉由雷射實現。在一實例中，僅藉由一雷射掃描該等裝置。在一實施例中，可使用一遮罩，其僅在施體基板510之背部處具有針對裝置之一開口以阻擋來自其他區域之雷射。遮罩可係單獨的或係施體基板510之部分。在另一情況中，在剝離程序之前，另一基板可經連接至裝置以固持裝置。在另一情況中，可在裝置之間使用一填料層574 (例如，電介質)。In another embodiment shown in FIG. 5A, the substrate is formed by etching through different layers (for example, a first bottom conductive layer 512, a functional layer (eg, light emitting) 514, and a second top conductive layer 516). A mesa structure is developed on a donor substrate 510 (as described above), one of the microdevice structures. A top contact pad 532 may be deposited before or after etching on top of the top conductive layer 516. As such, each microdevice may include other passivation layers and / or MIS layers 572 surrounding each microdevice for isolation and / or protection. In this embodiment, the device may be provided with different anchors, whereby the anchor holds the device to the donor substrate 510 after the device is peeled off. Peeling can be achieved by laser. In one example, the devices are scanned by only a laser. In one embodiment, a mask can be used that has an opening for one of the devices only at the back of the donor substrate 510 to block lasers from other areas. The mask may be separate or part of the donor substrate 510. In another case, prior to the stripping process, another substrate may be connected to the device to hold the device. In another case, a filler layer 574 (eg, a dielectric) may be used between devices.

在一第一繪示情況中，提供一層592以將裝置固持至施體基板510。層592可為一單獨層或在台面結構之開發期間未經蝕刻之微裝置之層之部分。在另一情況中，層592可為層572之一者之延續。在此情況中，層592可為一金屬或電介質層(SiN或SiO2 ，或其他材料)。在另一情況中，錨經開發為包括延伸部594、一空隙/間隙596及/或一橋部598之一單獨結構。此處，一犧牲層經沈積且圖案化為具有與間隙/空隙596相同之形狀。接著，錨層經沈積且圖案化以形成橋部598及/或延伸部594。可稍後移除犧牲材料以產生空隙/間隙596。吾人亦可避免延伸部594。類似於先前錨592，另一錨可由不同結構層製成。在另一情況中，充填層574充當錨。在此情況中，充填層574可經蝕刻或圖案化或保留其原貌。In a first illustrated case, a layer 592 is provided to hold the device to the donor substrate 510. The layer 592 may be a separate layer or part of a layer of a microdevice that has not been etched during the development of the mesa structure. In another case, layer 592 may be a continuation of one of layers 572. In this case, the layer 592 may be a metal or dielectric layer (SiN or SiO 2 , or other materials). In another case, the anchor was developed as a separate structure including an extension 594, a void / gap 596, and / or a bridge 598. Here, a sacrificial layer is deposited and patterned to have the same shape as the gap / void 596. The anchor layer is then deposited and patterned to form the bridge portion 598 and / or the extension portion 594. The sacrificial material may be removed later to create a void / gap 596. We can also avoid the extension 594. Similar to the previous anchor 592, another anchor may be made of a different structural layer. In another case, the filling layer 574 acts as an anchor. In this case, the filling layer 574 may be etched or patterned or retain its original appearance.

圖5B繪示在移除填料層574及/或蝕刻填料層以產生錨574之後之樣本。在另一情況中，剝離之後橋部層598之黏著力足以將裝置固持於適當位置中且充當一錨。圖5B之右側上之最終裝置；僅出於繪示目的，在一個基板510中展示此等裝置。吾人可在一基板中使用其等之一者或組合。如在圖5C中展示，錨574可覆蓋裝置之至少一部分或整個周邊或可經圖案化以形成臂594及592。結構之任一者可用於錨結構之任一者。圖5D繪示傳送裝置至一受體基板590之一個實例。此處，微裝置經接合至襯墊582且在沒有任何襯墊的情況下放置於一預定義區域中。壓力或分離力可藉由使其等破裂而釋放錨。在另一情況中，溫度亦可用於釋放錨。在微裝置與施體基板510之剝離之間的層之黏度可藉由控制溫度增加以充當一錨。圖5E繪示在被傳送至受體基板590之後之裝置且展示錨中之可能的釋放點598-2。錨亦可直接連接至施體基板510或透過其他層間接連接至施體基板510。FIG. 5B illustrates the sample after the filler layer 574 is removed and / or the filler layer is etched to generate the anchor 574. In another case, the adhesive force of the bridge layer 598 after peeling is sufficient to hold the device in place and act as an anchor. The final devices on the right side of FIG. 5B; these devices are shown in a substrate 510 for illustration purposes only. We can use one or a combination of them in a substrate. As shown in FIG. 5C, the anchor 574 may cover at least a portion or the entire perimeter of the device or may be patterned to form the arms 594 and 592. Any of the structures can be used for any of the anchor structures. FIG. 5D illustrates an example of the transfer device to a receiver substrate 590. Here, the microdevice is bonded to the pad 582 and placed in a predefined area without any pad. Pressure or separation force can release the anchor by causing it to rupture. In another case, temperature can also be used to release the anchor. The viscosity of the layer between the microdevice and the peeling of the donor substrate 510 can be increased by controlling the temperature to act as an anchor. FIG. 5E illustrates the device after being transferred to the receptor substrate 590 and shows a possible release point 598-2 in the anchor. The anchor can also be directly connected to the donor substrate 510 or indirectly connected to the donor substrate 510 through other layers.

可開發施體基板510上之裝置以在背離施體基板510之同一側上具有兩個接觸件532及480。在一個情況中，裝置可直接自施體基板510傳送至受體基板590。此處，接觸件532及480可直接接合至受體基板襯墊582。可在施體510中或在匣基板中測試裝置。在另一實施例中，在傳送至受體基板590之前，裝置可首先自施體匣510傳送至一匣基板。此處，接觸件532不會直接接合至受體基板590，即，受體基板590不需要具有特殊襯墊582。在此情況中，導電層經沈積且圖案化以將接觸件532連接至受體基板590中之恰當連接。The device on the donor substrate 510 can be developed to have two contacts 532 and 480 on the same side facing away from the donor substrate 510. In one case, the device can be transferred directly from the donor substrate 510 to the acceptor substrate 590. Here, the contacts 532 and 480 may be directly bonded to the receptor substrate pad 582. The device can be tested in the donor 510 or in the cassette substrate. In another embodiment, the device may first be transferred from the donor cassette 510 to a cassette substrate before being transferred to the acceptor substrate 590. Here, the contact 532 is not directly bonded to the acceptor substrate 590, that is, the acceptor substrate 590 does not need to have a special pad 582. In this case, the conductive layer is deposited and patterned to connect the contacts 532 to the proper connections in the acceptor substrate 590.

系統或受體基板390、490及590可包括微發光二極體(LED)、有機LED、感測器、固態裝置、積體電路、(微機電系統) MEMS及/或其他電子組件。其他實施例係關於相對於像素陣列圖案化且放置微裝置以最佳化選擇性傳送程序中之微裝置利用。系統或接收基板390、490及590可為但不限於一印刷電路板(PCB)、薄膜電晶體底板、積體電路基板或(在光學微裝置(諸如LED)之一個情況中)一顯示器之一組件(例如，一驅動電路底板)。微裝置施體基板及受體基板之該圖案化可與不同傳送技術(包含但不限於使用不同機構(例如，靜電傳送頭、彈性體傳送頭)取放或直接傳送機構(諸如雙重功能襯墊)及其他)組合使用。The system or acceptor substrates 390, 490, and 590 may include microluminescent diodes (LEDs), organic LEDs, sensors, solid state devices, integrated circuits, (microelectromechanical systems) MEMS, and / or other electronic components. Other embodiments are related to patterning and positioning microdevices relative to a pixel array to optimize microdevice utilization in a selective transfer process. The system or receiving substrates 390, 490, and 590 may be, but are not limited to, a printed circuit board (PCB), a thin-film transistor substrate, an integrated circuit substrate, or (in the case of an optical microdevice such as an LED) a display Components (for example, a driver circuit board). The patterning of the microdevice donor substrate and the acceptor substrate can be carried with different transfer technologies (including but not limited to using different mechanisms (e.g., electrostatic transfer head, elastomer transfer head) or direct transfer mechanisms (such as dual-function pad ) And others).

圖6A繪示圖3A至圖3G之台面結構之一替代性實施例，其中台面結構最初並不蝕刻穿過所有層。此處，緩衝層312及/或接觸層312之一些部分可在初始步驟期間保留。在施體基板310上開發台面結構。微裝置結構藉由蝕刻穿過不同層(例如，一第一底部導電層312、功能層314及第二頂部導電層316)形成。一頂部接觸件332可在頂部導電層316之頂部上之蝕刻之前或之後沈積。台面結構可包含將在形成台面結構之前或在形成台面結構之後沈積且圖案化之其他層372。此等層可為電介質、MIS層、接觸件、犧牲層等。在台面結構開發之後，一(若干)填料層(例如，電介質材料) 374用於微裝置之間且圍繞微裝置以將微裝置緊固在一起。微裝置藉由一(若干)基板接合層378接合至一臨時基板376。(若干)接合層378可提供不同力之一或多者，諸如靜電、化學、物理、熱等等。在自施體基板310移除裝置之後，如前文描述，底部導電層312之額外部分可經蝕刻掉或圖案化以分離裝置(圖6C)。其他層(諸如接觸接合層380)可經沈積且圖案化。此處，吾人可蝕刻填料層374以分離微裝置或移除犧牲層以分離裝置。在另一實施例中，可施加溫度以將裝置自填料層374分離且使其等備妥傳送至受體基板390。可選擇性地實現分離，如在前文描述。在另一實施例中，填料層374可經蝕刻以形成至少部分圍繞各微裝置之一外殼、基底或錨375 (例如，具有一錐台或平頭角錐(frusto-pyramidal)形狀)，如在圖6E中展示。另一層可沈積於基底375上方且用於製作錨598-2。在形成額外層598-2之後，填料基底層375可保留或自錨設置移除。圖6G展示具有一犧牲層372-2之一裝置。犧牲層372-2可藉由蝕刻移除或可熱變形或移除。FIG. 6A illustrates an alternative embodiment of the mesa structure of FIGS. 3A to 3G, wherein the mesa structure does not etch through all layers initially. Here, portions of the buffer layer 312 and / or the contact layer 312 may remain during the initial step. A mesa structure is developed on the donor substrate 310. The microdevice structure is formed by etching through different layers (for example, a first bottom conductive layer 312, a functional layer 314, and a second top conductive layer 316). A top contact 332 may be deposited before or after etching on top of the top conductive layer 316. The mesa structure may include other layers 372 that will be deposited and patterned before the mesa structure is formed or after the mesa structure is formed. These layers may be dielectric, MIS layers, contacts, sacrificial layers, and the like. After the development of the mesa structure, one (several) filler layers (eg, dielectric materials) 374 are used between and around the microdevices to secure the microdevices together. The microdevice is bonded to a temporary substrate 376 through a substrate bonding layer (s) 378. The bonding layer (s) 378 may provide one or more of different forces, such as electrostatic, chemical, physical, thermal, and the like. After the device is removed from the donor substrate 310, as previously described, additional portions of the bottom conductive layer 312 may be etched away or patterned to separate the device (FIG. 6C). Other layers, such as the contact bonding layer 380, may be deposited and patterned. Here, we can etch the filler layer 374 to separate the microdevice or remove the sacrificial layer to separate the device. In another embodiment, a temperature may be applied to separate the device from the packing layer 374 and prepare it for transfer to the receptor substrate 390. Separation can optionally be achieved, as described previously. In another embodiment, the filler layer 374 may be etched to form a housing, substrate, or anchor 375 (eg, having a frustum or frusto-pyramidal shape) that at least partially surrounds one of the microdevices, as shown in FIG. Shown in 6E. Another layer may be deposited over substrate 375 and used to make anchor 598-2. After forming the additional layer 598-2, the filler base layer 375 may remain or be removed from the anchor arrangement. FIG. 6G shows a device having a sacrificial layer 372-2. The sacrificial layer 372-2 may be removed by etching or may be thermally deformed or removed.

在另一實施例中，錨與外殼375相同且在微裝置被傳送至匣376之後藉由聚合物、有機或其他層建立。外殼375可具有不同形狀。在一個情況中，外殼可匹配裝置形狀。外殼側壁可比微裝置高度短。外殼側壁可在傳送週期之前連接至微裝置以提供對匣376中之微裝置之不同後處理及用於運輸及儲存之微裝置匣之封裝之支撐。外殼側壁可為分離的或至微裝置之連接可在傳送週期之前或期間藉由不同方法(諸如加熱、蝕刻或曝光)自裝置弱化。In another embodiment, the anchor is the same as the housing 375 and is established by a polymer, organic or other layer after the microdevice is transferred to the cassette 376. The housing 375 may have different shapes. In one case, the housing can match the shape of the device. The housing sidewalls can be shorter than the height of the microdevice. The housing sidewalls can be connected to the microdevices prior to the transfer cycle to provide different post-processing of the microdevices in the cassette 376 and support for the packaging of the microdevice cassettes for transportation and storage. The housing sidewalls can be separate or the connection to the microdevice can be weakened from the device by different methods, such as heating, etching or exposure, before or during the transfer cycle.

可開發施體基板310上之裝置以在背離施體基板310之同一側上具有兩個接觸件332及380。在此情況中，匣376上之導電層可經圖案化以獨立加偏壓於裝置之兩個接觸件332及380。在一個情況中，裝置可直接自匣基板376傳送至受體基板390。此處，接觸件332及380不會直接接合至受體基板390，即，受體基板390不需要具有特殊襯墊。在此情況中，導電層經沈積且圖案化以將接觸件332及380連接至受體基板390中之恰當連接。在另一實施例中，在傳送至受體基板390之前，裝置可首先自匣376傳送至一臨時基板。因此，接觸件332及380可直接接合至受體基板襯墊。可在匣376中或在臨時基板中測試裝置。The device on the donor substrate 310 can be developed to have two contacts 332 and 380 on the same side facing away from the donor substrate 310. In this case, the conductive layer on the cassette 376 may be patterned to independently bias the two contacts 332 and 380 of the device. In one case, the device may be transferred directly from the cassette substrate 376 to the receiver substrate 390. Here, the contacts 332 and 380 are not directly bonded to the receiver substrate 390, that is, the receiver substrate 390 does not need to have a special pad. In this case, the conductive layer is deposited and patterned to connect the contacts 332 and 380 to the proper connections in the acceptor substrate 390. In another embodiment, the device may first be transferred from the cassette 376 to a temporary substrate before being transferred to the receiver substrate 390. Therefore, the contacts 332 and 380 can be directly bonded to the receptor substrate pad. The device can be tested in the cassette 376 or in a temporary substrate.

歸因於基板晶格與微裝置層之間的一失配，層之生長含有若干缺陷，諸如差排、空隙等等。為減少該等缺陷，具有在其等之間或與其等相鄰之一分離層6116之至少一個第一緩衝層6114及/或第二緩衝層6118可首先沈積於一施體基板6110上，且作用層6112隨後沈積於緩衝層6114及/或6118上方。緩衝層6114及6118之厚度可為顯著的，例如，如施體基板6110一般厚。在微裝置自施體基板6110之分離(剝離)期間，亦可分離緩衝層6114/6118。因此，每次應重複緩衝層沈積。圖6H繪示基板6110上之一結構，其中分離層6116在第一緩衝層6114與實際裝置層6112之間。分離層6116與裝置層6112之間可存在一第二緩衝層6118。第二緩衝層6118亦可阻擋來自分離層6116之污染穿透至裝置層6112。緩衝層6114及6118兩者可包括超過一個層。分離層6116亦可包括不同材料之一堆疊。在一個實例中，分離層6116對其他層並不回應之光之一波長作出反應。此光源可用於將實際裝置6112與(若干)緩衝層6114/6118及施體基板6110分離。在另一實例中，分離層6116對化學品作出反應，而同一化學品不會影響其他層。此化學品可用於移除或改變分離層6116將裝置與(若干)緩衝層6114/6118及基板6110分離之性質。此方法使第一緩衝層6114在施體基板6110上保持完整且因此其可再用於下一裝置開發。在下一裝置沈積之前，可實現某一表面處理(諸如清洗或緩衝)。在另一實例中，(若干)緩衝層6114/6118可包括氧化鋅。Due to a mismatch between the substrate lattice and the microdevice layer, the growth of the layer contains several defects, such as differential rows, voids, and so on. To reduce these defects, at least one first buffer layer 6114 and / or second buffer layer 6118 having a separation layer 6116 between them or adjacent thereto may be deposited on a donor substrate 6110 first, and An active layer 6112 is then deposited over the buffer layers 6114 and / or 6118. The thickness of the buffer layers 6114 and 6118 may be significant, for example, as thick as the donor substrate 6110. During the separation (peeling) of the microdevice from the donor substrate 6110, the buffer layer 6114/6118 can also be separated. Therefore, the buffer layer deposition should be repeated each time. FIG. 6H illustrates a structure on the substrate 6110, wherein the separation layer 6116 is between the first buffer layer 6114 and the actual device layer 6112. A second buffer layer 6118 may exist between the separation layer 6116 and the device layer 6112. The second buffer layer 6118 can also prevent the pollution from the separation layer 6116 from penetrating to the device layer 6112. Both buffer layers 6114 and 6118 may include more than one layer. The separation layer 6116 may also include a stack of one of different materials. In one example, the separation layer 6116 responds to one wavelength of light that other layers do not respond to. This light source can be used to separate the actual device 6112 from the buffer layer (s) 6114/6118 and the donor substrate 6110. In another example, the separation layer 6116 reacts to chemicals without the same chemicals affecting other layers. This chemical can be used to remove or change the nature of the separation layer 6116 separating the device from the buffer layer (s) 6114/6118 and the substrate 6110. This method keeps the first buffer layer 6114 intact on the donor substrate 6110 and therefore it can be reused for the next device development. Before the next device is deposited, a certain surface treatment (such as cleaning or buffering) can be achieved. In another example, the buffer layer (s) 6114/6118 may include zinc oxide.

在分離程序(剝離)之前，微裝置可藉由不同蝕刻程序分離，如在圖6I中示範。蝕刻可蝕刻第二緩衝層(若存在) 6118及亦分離層6116之部分或全部，以及裝置層6112。在另一實例中，不蝕刻第二緩衝層6118或分離層6116。在蝕刻步驟之後，微裝置經臨時(或永久)接合至另一基板6150且移除或修改分離層6116以將微裝置與(若干)第一緩衝層6114及第二緩衝層6118分離。如在圖6J中示範，第一緩衝層6114可在施體基板6110上保持實質上完整。Prior to the separation procedure (stripping), the microdevice can be separated by different etching procedures, as demonstrated in FIG. 6I. Etching may etch part or all of the second buffer layer (if present) 6118 and also the separation layer 6116, and the device layer 6112. In another example, the second buffer layer 6118 or the separation layer 6116 is not etched. After the etching step, the microdevice is temporarily (or permanently) bonded to another substrate 6150 and the separation layer 6116 is removed or modified to separate the microdevice from the first buffer layer 6114 and the second buffer layer 6118. As demonstrated in FIG. 6J, the first buffer layer 6114 may remain substantially intact on the donor substrate 6110.

在圖6K至圖6M中繪示之另一實施例中，層(例如，第一底部導電層312、功能層314及第二頂部導電層316)可形成於施體基板6210上作為島狀區(island) 6212。圖6K繪示形成為一微裝置陣列之島狀區6212之一俯視圖。島狀區6212可具有與匣相同之大小或匣之多倍大小。島狀區6212可自緩衝層6114/6118開始或在緩衝層之後形成。此處，表面處理或間隙6262、6263可形成於表面上以起始將薄膜作為島狀區之生長(圖6L)。為了處理微裝置，如同圖6M可藉由填料層6220充填間隙。填料6220可包括聚合物、金屬或電介質層。在處理微裝置之後，可移除填料層6220。In another embodiment shown in FIGS. 6K to 6M, layers (for example, the first bottom conductive layer 312, the functional layer 314, and the second top conductive layer 316) may be formed on the donor substrate 6210 as island regions (island) 6212. FIG. 6K shows a top view of one of the island-like regions 6212 formed as a micro-device array. The island-like region 6212 may have the same size as the box or multiple times the size of the box. The island region 6212 may be formed from the buffer layers 6114/6118 or after the buffer layers. Here, a surface treatment or gap 6262, 6263 can be formed on the surface to initiate the growth of the film as an island region (FIG. 6L). To handle the microdevice, the gap can be filled by the filler layer 6220 as in FIG. 6M. Filler 6220 may include a polymer, metal, or dielectric layer. After processing the microdevice, the filler layer 6220 may be removed.

圖7A凸顯開發微裝置匣之程序。在第一步驟702期間，在一施體基板(例如，310或510)上製備微裝置。在此步驟期間，形成該等裝置且對該等裝置執行後處理。在第二步驟704期間，製備與施體基板310或510分離之裝置。此步驟可涉及藉由使用錨(例如375、476-1、592、594、598及598-2)或填料(例如374、472及574)緊固微裝置。在第三步驟706期間，匣或臨時基板(例如，376或476)自第一步驟702及第二步驟704中之經預處理微裝置形成。在一個情況中，在此步驟期間，微裝置透過一接合層(例如，378或478)直接或間接接合至匣基板376或476。接著，將微裝置與微裝置匣基板376或476分離。在另一實施例中，匣形成於微裝置施體基板(例如，510)上。在裝置緊固於匣基板376、476或510上之後，可實現其他處理步驟，諸如移除一些層(例如312、374、472、574)、添加電氣(例如，接觸件380或480)或光學(透鏡、反射器……)層。在第四步驟708期間，將匣376或476移動至受體基板(例如，390、490或590)以將裝置傳送至受體基板390、490或590。可重新配置或合併一些此等步驟。可對微裝置執行一測試步驟707A，同時其等仍在匣基板(例如，376或476)上，或在微裝置已被傳送至受體基板(例如，390、490或590)之後判定微裝置是否有缺陷。有缺陷微裝置可經移除或在原位修復707B。例如，可測試具有一預定數目之一組微裝置，且若缺陷之數目超過一預定臨限值，則可移除整個微裝置組，可移除至少一些有缺陷微裝置及/或可修復至少一些有缺陷微裝置。FIG. 7A highlights the process of developing a microdevice cassette. During a first step 702, a microdevice is prepared on a donor substrate (eg, 310 or 510). During this step, the devices are formed and post-processing is performed on the devices. During a second step 704, a device separate from the donor substrate 310 or 510 is prepared. This step may involve securing the microdevice by using anchors (eg, 375, 477-1, 592, 594, 598, and 598-2) or fillers (eg, 374, 472, and 574). During a third step 706, a cassette or temporary substrate (eg, 376 or 476) is formed from the pre-processed microdevices in the first step 702 and the second step 704. In one case, during this step, the microdevice is directly or indirectly bonded to the cassette substrate 376 or 476 through a bonding layer (eg, 378 or 478). Next, the microdevice is separated from the microdevice cassette substrate 376 or 476. In another embodiment, the cassette is formed on a microdevice donor substrate (eg, 510). After the device is secured to the cassette substrate 376, 476, or 510, other processing steps can be implemented, such as removing some layers (e.g., 312, 374, 472, 574), adding electrical (e.g., contacts 380 or 480), or optical (Lens, reflector ...) layer. During a fourth step 708, the cassette 376 or 476 is moved to a receiver substrate (eg, 390, 490, or 590) to transfer the device to the receiver substrate 390, 490, or 590. Some of these steps can be reconfigured or merged. A test step 707A may be performed on the microdevice while they are still on the cassette substrate (e.g., 376 or 476) or after the microdevice has been transferred to the receiver substrate (e.g., 390, 490, or 590) Whether there are defects. The defective microdevice can be removed or repaired in situ 707B. For example, a group of microdevices having a predetermined number can be tested, and if the number of defects exceeds a predetermined threshold, the entire group of microdevices can be removed, at least some defective microdevices can be removed, and / or at least can be repaired Some defective microdevices.

圖7B凸顯開發微裝置匣之程序。在第一步驟702期間，在一基板上製備微裝置。在此步驟期間，形成該等裝置且對該等裝置執行後處理。在第二步驟704期間，製備與基板分離之裝置。此步驟可涉及藉由使用錨或填料緊固微裝置。在第三步驟706期間，自第一步驟702及第二步驟704中之經預處理微裝置形成匣。在步驟707A期間，已經識別具有超過一臨限值之缺陷之與系統基板中之像素相關聯之微裝置之組，且在步驟707B期間移除與該微裝置組相關聯之微裝置。在一個情況中，在此步驟期間，微裝置透過一接合層直接或間接接合至匣基板。接著，將微裝置與微裝置基板分離。在另一情況中，在微裝置基板上形成匣。在裝置緊固於匣基板上之後，可實現其他處理步驟，諸如移除一些層、添加電氣(例如，接觸件)或光學(透鏡、反射器……)層。在第四步驟708期間，將匣移動至受體基板以將該等裝置傳送至受體基板。可重新配置或合併一些此等步驟。FIG. 7B highlights the process of developing a microdevice cassette. During a first step 702, a microdevice is prepared on a substrate. During this step, the devices are formed and post-processing is performed on the devices. During a second step 704, a device separate from the substrate is prepared. This step may involve securing the microdevice by using an anchor or filler. During a third step 706, a cassette is formed from the pre-processed microdevices in the first step 702 and the second step 704. During step 707A, a group of microdevices associated with pixels in the system substrate having defects exceeding a threshold has been identified, and the microdevices associated with the group of microdevices are removed during step 707B. In one case, the microdevice is directly or indirectly bonded to the cassette substrate through a bonding layer during this step. Next, the microdevice is separated from the microdevice substrate. In another case, a cassette is formed on a microdevice substrate. After the device is fastened to the cassette substrate, other processing steps can be implemented, such as removing some layers, adding electrical (eg, contacts) or optical (lens, reflector ...) layers. During a fourth step 708, the cassette is moved to the receiver substrate to transfer the devices to the receiver substrate. Some of these steps can be reconfigured or merged.

圖7C凸顯開發微裝置匣之程序。在第一步驟702期間，在一基板上製備微裝置。在此步驟期間，形成該等裝置且對該等裝置執行後處理。在第二步驟704期間，製備與基板分離之裝置。此步驟可涉及藉由使用錨或填料緊固微裝置。在第三步驟706期間，自第一步驟702及第二步驟704中之經預處理微裝置形成匣。在步驟707期間，已經識別匣中之有缺陷微裝置，且若缺陷之數目超過一臨限值，則在步驟707B期間修復一些或全部有缺陷微裝置。在一個情況中，在此步驟期間，微裝置透過一接合層直接或間接接合至匣基板。接著，將微裝置與微裝置基板分離。在另一情況中，在微裝置基板上形成匣。在裝置緊固於匣基板上之後，可實現其他處理步驟，諸如移除一些層、添加電氣(例如，接觸件)或光學(透鏡、反射器……)層。在第四步驟708期間，將匣移動至受體基板以將該等裝置傳送至受體基板。可重新配置或合併一些此等步驟。FIG. 7C highlights the process of developing a microdevice cassette. During a first step 702, a microdevice is prepared on a substrate. During this step, the devices are formed and post-processing is performed on the devices. During a second step 704, a device separate from the substrate is prepared. This step may involve securing the microdevice by using an anchor or filler. During a third step 706, a cassette is formed from the pre-processed microdevices in the first step 702 and the second step 704. During step 707, the defective microdevices in the cassette have been identified, and if the number of defects exceeds a threshold, some or all of the defective microdevices are repaired during step 707B. In one case, the microdevice is directly or indirectly bonded to the cassette substrate through a bonding layer during this step. Next, the microdevice is separated from the microdevice substrate. In another case, a cassette is formed on a microdevice substrate. After the device is fastened to the cassette substrate, other processing steps can be implemented, such as removing some layers, adding electrical (eg, contacts) or optical (lens, reflector ...) layers. During a fourth step 708, the cassette is moved to the receiver substrate to transfer the devices to the receiver substrate. Some of these steps can be reconfigured or merged.

圖8繪示將裝置自匣376、476或510傳送至受體基板390、490或590之步驟。此處，在第一步驟802期間，裝載(或拾取)一匣376、476或510，或在另一實施例中，使一備用設備臂預先裝載匣376、476或510。在第二步驟804期間，將匣376、476或510與受體基板之部分(或全部)對準。對準可透過使用匣376、476或510及受體基板390、490或590上之專用對準標記或使用受體基板390、490或590上之微裝置及著陸區域實現。在第三步驟期間，將微裝置傳送至選定著陸區域。在第四步驟808期間，若受體基板390、490或590經完全填充，則在步驟810中將匣基板376、476或510移動至接下來的步驟(例如，另一受體基板390、490或590)。若當前受體基板390、490或590需要進一步填充，則進行一或多個額外匣376、476或510之進一步傳送步驟。在一新的傳送週期之前，在步驟812中若匣376、476或510不具有足夠裝置，則週期自第一步驟802開始。若匣376、476或510具有足夠之裝置，則匣376、476或510在步驟814中偏移(或移動且對準)至受體基板390、490或590之一新的區域且新的週期繼續至步驟806。可合併及/或重新配置一些此等步驟。FIG. 8 illustrates the steps of transferring the device from the cassette 376, 476, or 510 to the receiver substrate 390, 490, or 590. Here, during the first step 802, a cassette 376, 476 or 510 is loaded (or picked up), or in another embodiment, a spare equipment arm is pre-loaded with the cassette 376, 476 or 510. During a second step 804, the cassette 376, 476, or 510 is aligned with a portion (or all) of the acceptor substrate. Alignment can be achieved by using dedicated alignment marks on the cassette 376, 476, or 510 and the receptor substrate 390, 490, or 590, or using the microdevice and landing area on the receptor substrate 390, 490, or 590. During the third step, the microdevice is transferred to the selected landing area. During the fourth step 808, if the receptor substrate 390, 490, or 590 is completely filled, the cassette substrate 376, 476, or 510 is moved to the next step in step 810 (e.g., another receptor substrate 390, 490 Or 590). If the current acceptor substrate 390, 490 or 590 needs to be further filled, a further transfer step of one or more additional cassettes 376, 476 or 510 is performed. Before a new transmission cycle, if the cassette 376, 476, or 510 does not have enough devices in step 812, the cycle starts from the first step 802. If cassette 376, 476, or 510 has sufficient devices, cassette 376, 476, or 510 is shifted (or moved and aligned) in step 814 to a new area of the receiver substrate 390, 490, or 590 and a new cycle Proceed to step 806. Some of these steps can be combined and / or reconfigured.

圖9A及圖9B繪示將裝置自匣(例如，臨時基板376、476或510)傳送至受體基板(例如390、490或590)之步驟。此處，在第一步驟902期間，裝載(或拾取)一匣376或476，或在另一實施例中，使一備用設備臂預先裝載匣。在第二步驟902-2期間，在匣376、476或510中選擇一組微裝置，該等微裝置中之缺陷數目低於一臨限值。在第三步驟904期間，匣376、476或510與受體基板之部分(或全部)對準。對準可透過使用匣376、476或510及/或受體基板390、490或590上之專用對準標記或使用受體基板390、490或590上之微裝置及著陸區域實現。接著，在第三步驟906期間，可將微裝置傳送至選定著陸區域。在另一實例中，如圖9B所示，在一可選步驟906-1中，在匣中所選擇的微裝置可連接至受體基板。在一可選步驟906-2中，可(例如)藉由透過受體基板390、490或590加偏壓而開啟微裝置以測試與受體基板之微裝置連接。若發現個別微裝置有缺陷或不作用，則可執行一額外調整步驟906-3以校正或修復一些或全部不作用微裝置。9A and 9B illustrate steps for transferring a device from a cassette (for example, a temporary substrate 376, 476, or 510) to a receiver substrate (for example, 390, 490, or 590). Here, during the first step 902, a cassette 376 or 476 is loaded (or picked up), or in another embodiment, a spare equipment arm is pre-loaded with the cassette. During the second step 902-2, a set of micro-devices is selected in the cassette 376, 476, or 510, and the number of defects in the micro-devices is below a threshold value. During a third step 904, the cassette 376, 476, or 510 is aligned with a portion (or all) of the acceptor substrate. Alignment can be achieved by using a dedicated alignment mark on the cassette 376, 476, or 510 and / or the receptor substrate 390, 490, or 590, or using a microdevice and landing area on the receptor substrate 390, 490, or 590. Then, during a third step 906, the microdevice may be transferred to a selected landing area. In another example, as shown in FIG. 9B, in an optional step 906-1, the selected microdevice in the cassette can be connected to the acceptor substrate. In an optional step 906-2, the microdevice can be turned on to test the microdevice connection to the acceptor substrate, for example, by biasing through the acceptor substrate 390, 490, or 590. If individual microdevices are found to be defective or non-functional, an additional adjustment step 906-3 may be performed to correct or repair some or all non-functional microdevices.

在第四步驟908期間，若受體基板經完全填充，則在步驟910中受體基板390、490或590移動至接下來的步驟。若受體基板390、490或590需要進一步填充，則進行一或多個額外匣376、476或510之進一步傳送步驟。在一新的傳送週期之前，若匣376、476或510不具有足夠裝置，則週期自第一步驟902開始。在步驟912中若匣376、476或510具有足夠之裝置，則匣376、476或510在步驟902-2中偏移(或移動且對準)至受體基板390、490或590之一新的區域。During the fourth step 908, if the acceptor substrate is completely filled, the acceptor substrate 390, 490, or 590 moves to the next step in step 910. If the acceptor substrate 390, 490 or 590 needs to be filled further, a further transfer step of one or more additional cassettes 376, 476 or 510 is performed. Before a new transmission cycle, if the cassette 376, 476, or 510 does not have enough devices, the cycle starts from the first step 902. If the cassette 376, 476, or 510 has sufficient devices in step 912, the cassette 376, 476, or 510 is shifted (or moved and aligned) to one of the acceptor substrates 390, 490, or 590 in step 902-2. Area.

圖10繪示用於開發多類型微裝置匣376、476、510或1108之例示性處理步驟。在第一步驟1002期間，在一不同施體基板(例如，310或510)上製備至少兩個不同微裝置。在此步驟期間，形成該等裝置且對該等裝置執行後處理。在第二步驟1004期間，製備與施體基板(例如310或510)分離之裝置。此步驟可涉及藉由使用錨(例如375、476-1、592、594、598及598-2)或填料(例如374、472及574)緊固微裝置。在第三步驟1006期間，將第一裝置移動至匣376、476、510或1108。在第四步驟1008期間，將至少第二微裝置移動至匣376、476、510或1108。在一個情況中，在此步驟期間，微裝置透過一接合層(例如，378或478)直接或間接接合至匣基板376、476、510或1108。接著，將微裝置與微裝置施體基板310或510分離。在直接傳送的情況中，不同類型之微裝置可具有不同高度來輔助直接傳送。例如，被傳送至匣376、476、510或1108之第二類型之微裝置可略高於第一類型微裝置(或匣376、476、510或1108上之位置對於第二微裝置類型可為略高的)。此處，在匣376、476、510或1108經完全填充之後，可調整微裝置高度以使匣376、476、510或1108之表面平坦。此可藉由添加材料至更短微裝置或藉由自更高微裝置移除材料實現。在另一情況中，受體基板390、490或590上之著陸區域可具有與匣376、476、510或1108中之差異相關聯之不同高度。填充匣376、476、510或1108之另一方法係基於取放。微裝置可藉由取放程序移動至匣376、476、510或1108。此處，取放頭上之力元件可聯合用於匣376、476、510或1108中之一個叢集中之微裝置或單個用於各微裝置。同樣地，其等可使用其他方法移動至匣376、476、510或1108。在另一實施例中，額外裝置自第一或第二(第三或其他)微裝置之匣基板376、476、510或1108移走，且其他類型之微裝置被傳送至匣376、476、510或1108上之空的區域中。在裝置緊固於匣基板376、476、510或1108上之後，可實現其他處理步驟，諸如添加填料層374、474或574、移除一些層、添加電氣(例如，接觸件380、480或580)或光學(透鏡、反射器……)層。裝置可在用於填充受體基板390、490或590之前依次進行測試。測試可為電氣的或光學的或兩者之組合。測試可識別匣上之裝置之缺陷及/或效能。在最後一步驟1010期間將匣376、476、510或1108移動至受體基板390、490或590以將裝置傳送至受體基板390、490或590。可重新配置或合併一些此等步驟。FIG. 10 illustrates exemplary process steps for developing a multi-type microdevice cassette 376, 476, 510, or 1108. During a first step 1002, at least two different microdevices are prepared on a different donor substrate (eg, 310 or 510). During this step, the devices are formed and post-processing is performed on the devices. During a second step 1004, a device separate from the donor substrate (eg, 310 or 510) is prepared. This step may involve securing the microdevice by using anchors (eg, 375, 477-1, 592, 594, 598, and 598-2) or fillers (eg, 374, 472, and 574). During a third step 1006, the first device is moved to a cassette 376, 476, 510 or 1108. During a fourth step 1008, at least the second micro-device is moved to the cassette 376, 476, 510 or 1108. In one case, the microdevice is directly or indirectly bonded to the cassette substrate 376, 476, 510, or 1108 through a bonding layer (eg, 378 or 478) during this step. Next, the microdevice is separated from the microdevice donor substrate 310 or 510. In the case of direct transmission, different types of micro-devices may have different heights to assist the direct transmission. For example, a second type of microdevice transmitted to the cassette 376, 476, 510 or 1108 may be slightly higher than the first type of microdevice (or the position on the cassette 376, 476, 510 or 1108 may be Slightly higher). Here, after the cassette 376, 476, 510, or 1108 is completely filled, the height of the micro-device can be adjusted to make the surface of the cassette 376, 476, 510, or 1108 flat. This can be achieved by adding material to a shorter microdevice or by removing material from a higher microdevice. In another case, the land areas on the acceptor substrate 390, 490, or 590 may have different heights associated with differences in the cassettes 376, 476, 510, or 1108. Another method of filling the cassettes 376, 476, 510, or 1108 is based on pick and place. The micro-device can be moved to the cassette 376, 476, 510 or 1108 by a pick-and-place procedure. Here, the force element on the pick-and-place head can be used in combination with a micro device in one of the cassettes 376, 476, 510, or 1108 or a single micro device. Likewise, they can be moved to the cassette 376, 476, 510, or 1108 using other methods. In another embodiment, the additional device is removed from the cassette substrate 376, 476, 510, or 1108 of the first or second (third or other) microdevice, and other types of microdevices are transferred to the cassette 376, 476, In the empty area on 510 or 1108. After the device is secured to the cassette substrate 376, 476, 510, or 1108, additional processing steps may be implemented, such as adding a filler layer 374, 474, or 574, removing some layers, adding electrical (e.g., contacts 380, 480, or 580 ) Or optical (lens, reflector ...) layer. The device may be tested sequentially before being used to fill the acceptor substrate 390, 490, or 590. The test can be electrical or optical or a combination of both. Testing identifies defects and / or performance of the device on the box. The cassette 376, 476, 510, or 1108 is moved to the receiver substrate 390, 490, or 590 during the last step 1010 to transfer the device to the receiver substrate 390, 490, or 590. Some of these steps can be reconfigured or merged.

此處描述之傳送程序(例如，圖7、圖8、圖9及圖10)可包含一拉伸步驟來增加匣376、476、510或1108上之微裝置之節距。可在對準或對準步驟之部分之前實現此步驟。此步驟可增加與受體基板390、490或590上之著陸區域(或襯墊)對準之微裝置之數目。再者，其可匹配包括至少兩個微裝置之匣376、476、510或1108上之微裝置陣列之間的節距以匹配受體基板390、490或590上之著陸區域(或襯墊382)之節距。The transfer procedures described herein (eg, FIGS. 7, 8, 9, and 10) may include a stretching step to increase the pitch of the microdevices on the cassettes 376, 476, 510, or 1108. This step can be implemented before the alignment or part of the alignment step. This step can increase the number of microdevices aligned with the landing area (or pad) on the acceptor substrate 390, 490, or 590. Furthermore, it can match the pitch between microdevice arrays on cassettes 376, 476, 510, or 1108 that includes at least two microdevices to match the land area (or pad 382) on the receiver substrate 390, 490, or 590. ).

圖11A至圖11B繪示類似於臨時基板376、476或510之多類型微裝置匣1108之實例。在圖11A中，匣1108包含三個不同類型(例如，色彩(紅、綠及藍) )之微裝置1102、1104、1106。不過可存在更多裝置類型。微裝置之間的距離x1、x2、x3、y1與受體基板390、490或590中之著陸區域之節距相關。在若干裝置(其等可與受體基板390、490或590中之像素節距相關)之後，可存在一不同節距x4、y2。此節距將補償像素節距與微裝置節距(著陸區域節距)之間的一失配。在此情況中，若取放用於開發匣1108，則力元件可呈對應於各微裝置類型之行之行之形式且其可為用於各微裝置之單獨元件。在圖11B中，匣1108包含三個不同類型(例如，色彩(紅、綠及藍) )之微裝置1102、1104、1106。各色彩之複數個微裝置1102、1104、1106可經配置於匣中。若干微裝置可經配置於三個不同色彩之微裝置1102、1104、1106之間。微裝置之間的距離x1、x2、x3、y1與受體基板390、490或590中之著陸區域之節距相關。可使用施體或臨時(匣)基板上之像素化微裝置之此等不同配置。11A-11B illustrate examples of multiple types of micro-device cassettes 1108 similar to the temporary substrate 376, 476, or 510. In FIG. 11A, the cassette 1108 includes three different types of microdevices 1102, 1104, 1106 (eg, colors (red, green, and blue)). However, there may be more device types. The distances x1, x2, x3, y1 between the microdevices are related to the pitches of the land areas in the acceptor substrate 390, 490 or 590. After several devices (which may be related to the pixel pitch in the receiver substrate 390, 490 or 590), there may be a different pitch x4, y2. This pitch will compensate for a mismatch between the pixel pitch and the microdevice pitch (landing area pitch). In this case, if the pick-and-place is used for the development cassette 1108, the force element may be in the form of a line corresponding to each type of microdevice and it may be a separate element for each microdevice. In FIG. 11B, the cassette 1108 includes three different types of microdevices 1102, 1104, 1106 (eg, colors (red, green, and blue)). A plurality of micro-devices 1102, 1104, 1106 of each color can be configured in the box. Several micro-devices can be configured between three micro-devices 1102, 1104, 1106 of different colors. The distances x1, x2, x3, y1 between the microdevices are related to the pitches of the land areas in the acceptor substrate 390, 490 or 590. These different configurations of pixelated microdevices on donor or temporary (cassette) substrates can be used.

圖12A至圖12B繪示類似於臨時基板376、476或510之一多類型微裝置匣1208之實例。在圖12A中，匣1208包含三個不同類型(例如，色彩(紅、綠及藍) )之微裝置1202、1204、1206。其他區域1206-2可為空的，使用備用微裝置填充或包含一第四不同類型之微裝置。微裝置之間的距離x1、x2、y1及y2與受體基板390、490或590中之著陸區域之節距相關。在若干裝置陣列(其等可與受體基板390、490或590中之像素節距相關)之後，可存在一不同節距x4、y4。此節距將補償像素節距與微裝置節距(著陸區域節距)之間的一失配。在圖12B中，匣1208包含三個不同類型(例如，色彩(紅、綠及藍) )之微裝置1202、1204、1206。各色彩之複數個微裝置1202、1204、1206可經配置於匣中。若干微裝置可經配置於三個不同色彩之微裝置1202、1204、1206之間。微裝置之間的距離x1、x2、y1及y2與受體基板390、490或590中之著陸區域之節距相關。可使用施體或臨時(匣)基板上之像素化微裝置之此等不同配置來映射一底板上之微裝置。12A-12B illustrate an example of a multi-type micro-device cassette 1208 similar to one of the temporary substrates 376, 476, or 510. In FIG. 12A, the cassette 1208 includes three different types of micro-devices 1202, 1204, 1206 (eg, colors (red, green, and blue)). The other area 1206-2 may be empty, filled with a spare microdevice or containing a fourth different type of microdevice. The distances x1, x2, y1, and y2 between the microdevices are related to the pitch of the land areas in the receiver substrate 390, 490, or 590. After several device arrays (which may be related to the pixel pitch in the receiver substrate 390, 490, or 590), there may be a different pitch x4, y4. This pitch will compensate for a mismatch between the pixel pitch and the microdevice pitch (landing area pitch). In FIG. 12B, the cassette 1208 includes three different types of micro-devices 1202, 1204, 1206 (eg, colors (red, green, and blue)). A plurality of micro-devices 1202, 1204, 1206 of each color can be configured in the box. Several micro-devices can be configured between three micro-devices 1202, 1204, 1206 of different colors. The distances x1, x2, y1, and y2 between the microdevices are related to the pitch of the land areas in the receiver substrate 390, 490, or 590. These different configurations of pixelated microdevices on donor or temporary (cassette) substrates can be used to map microdevices on a backplane.

圖13繪示在傳送至多類型微裝置匣376、476、510、1108、1208之前在類似於施體基板310或510之一施體基板1304上製備之微裝置1302之一個實例。此處，吾人可對個別裝置或一群組裝置使用支撐層1306及1308。此處，節距可匹配匣376、476、510、1108、1208中之節距或其可為匣節距之倍數。FIG. 13 illustrates an example of a microdevice 1302 prepared on a donor substrate 1304 similar to one of the donor substrate 310 or 510 before being transferred to the multi-type microdevice cassette 376, 476, 510, 1108, 1208. Here, we can use support layers 1306 and 1308 for individual devices or a group of devices. Here, the pitch may match the pitch in the boxes 376, 476, 510, 1108, 1208 or it may be a multiple of the box pitch.

在上述所有結構中，在將微裝置用於填充一基板中之前可將其等自第一匣移動至一第二匣。可在傳送之後實現額外處理步驟，或一些處理步驟可在第一及第二匣結構之間劃分。In all of the above structures, the microdevice can be moved from the first cassette to a second cassette before it is used to fill a substrate. Additional processing steps may be implemented after transfer, or some processing steps may be divided between the first and second cassette structures.

圖14A繪示類似於施體基板310或510之一施體基板1480中之微裝置之一實施例。由於製造及材料瑕疪，微裝置可具有跨施體基板1480之一逐漸減小或增大之輸出功率(即，不均勻)，如使用更深至更淺著色繪示。由於裝置可在一區塊(例如，區塊1482)中一起傳送或每次依序傳送一或多者至受體基板390、490或590中，故受體基板390、490或590中之相鄰裝置逐漸降級。然而，可出現一更糟糕問題，其中一個區塊(例如，1482)或一系列相鄰區塊結束且另一區塊(例如，區塊1483)或一系列區塊開始(例如，沿著一交叉線1484)，此可導致如圖14B中示範之輸出效能之陡變。陡變可導致光電裝置(諸如顯示器)之視覺假影。FIG. 14A illustrates an embodiment of a microdevice similar to one of the donor substrates 310 or 510 in the donor substrate 1480. Due to manufacturing and material flaws, the microdevice may have a gradually decreasing or increasing output power (ie, non-uniformity) across one of the donor substrates 1480, as shown using darker to lighter coloring. Since the device can transmit together in one block (e.g., block 1482) or sequentially transmit one or more to the receiver substrate 390, 490, or 590 each time, the phase in the receiver substrate 390, 490, or 590 Neighboring devices are gradually degraded. However, a worse problem can arise where one block (e.g., 1482) or a series of adjacent blocks ends and another block (e.g., block 1483) or a series of blocks starts (e.g., along a Cross line 1484), which can lead to a sharp change in output performance as exemplified in FIG. 14B. Abrupt changes can cause visual artifacts of optoelectronic devices, such as displays.

為了解決不均勻之問題，圖14C中繪示之一項實施例包含將個別區塊1482及1483與顯示器中其等下方及上方之區塊偏斜或交錯，使得區塊之邊緣或交叉線並非銳線，從而消除交叉線1484，且藉此裝置之區塊形成顯示器上之一偏斜圖案。因此，尖銳轉變之平均影響顯著降低。偏斜可為隨機的且可具有不同輪廓。In order to solve the problem of non-uniformity, one embodiment shown in FIG. 14C includes skewing or interlacing the individual blocks 1482 and 1483 with the blocks below and above them in the display, so that the edges or intersections of the blocks are A sharp line, thereby eliminating the crossing line 1484, and the block of the device forms a skewed pattern on the display. As a result, the average impact of sharp transitions is significantly reduced. Skew can be random and can have different contours.

圖14D繪示另一實施例，其中相鄰區塊中之微裝置翻轉，使得具有類似效能之裝置彼此相鄰，例如，一第一區塊1482中之效能自一第一外側A至一第一內側B減小，而一第二相鄰區塊1483中之效能自與第一內側A相鄰之一第二內側B至一第二外側A增大，此可使區塊之間的改變及轉變保持非常平滑且消除長陡然交叉1484。FIG. 14D illustrates another embodiment in which the micro-devices in adjacent blocks are flipped so that devices with similar performance are adjacent to each other. For example, the performance in a first block 1482 ranges from a first outer side A to a first An inner side B decreases, and the efficiency in a second adjacent block 1483 increases from a second inner side B adjacent to the first inner side A to a second outer side A, which can change between blocks. And the transition remained very smooth and eliminated the long abrupt crossover 1484.

圖14E繪示翻轉裝置之一例示性組合，例如，在內側交替高及低效能裝置，且使邊緣偏斜以進一步改良平均均勻性。在所繪示之實施例中，裝置效能在兩個方向上(即，在相鄰水平區塊中及在相鄰垂直區塊中)在高及低之間交替。FIG. 14E illustrates an exemplary combination of flipping devices, for example, alternating high and low performance devices on the inside, and skewing the edges to further improve average uniformity. In the illustrated embodiment, the device performance alternates between high and low in two directions (ie, in adjacent horizontal blocks and in adjacent vertical blocks).

在一個情況中，在傳送至受體基板390、490或590之前，在區塊之邊緣之微裝置之效能匹配相鄰經傳送區塊(陣列)。In one case, the performance of the microdevices at the edge of the block matches the adjacent transferred block (array) before being transferred to the acceptor substrate 390, 490, or 590.

圖15A繪示使用兩個或兩個以上區塊1580、1582來填充受體基板1590中之一區塊。在所繪示之實施例中，偏斜或翻轉之方法可用於進一步改良平均均勻性，如圖15B中示範。分別來自區塊1580及1582之更高(或更低)輸出功率側B及C可彼此相鄰定位，以及使區塊之間的連接與其上方及下方之區塊連接交錯或偏斜。同樣地，可使用一隨機或經界定圖案來使用超過一個區塊填充匣或受體基板1590。FIG. 15A illustrates filling one of the receiver substrates 1590 with two or more blocks 1580, 1582. In the illustrated embodiment, the method of skewing or flipping can be used to further improve the average uniformity, as exemplified in FIG. 15B. The higher (or lower) output power sides B and C from blocks 1580 and 1582, respectively, can be positioned adjacent to each other, and the connections between blocks can be staggered or skewed with the block connections above and below. Likewise, a random or defined pattern can be used to fill more than one block or acceptor substrate 1590 with a block.

圖16A繪示具有超過一個區塊1680、1682及1684之樣本。區塊1680、1682及1684可來自相同施體基板310或510或來自不同施體基板310或510。圖16B繪示填充來自不同區塊1680、1682及1684之一匣1690以消除任何一個區塊中發現之不均勻性之一實例。FIG. 16A shows a sample with more than one block 1680, 1682, and 1684. Blocks 1680, 1682, and 1684 may be from the same donor substrate 310 or 510 or from different donor substrates 310 or 510. FIG. 16B illustrates an example of filling a box 1690 from different blocks 1680, 1682, and 1684 to eliminate the unevenness found in any one block.

圖17A及圖17B繪示具有多個匣1790之結構。選擇如前文描述之匣1790之位置，使得在不同傳送週期期間消除使受體基板390、490、590或1590中之相同區域與具有相同微裝置之匣1790重疊。在一個實例中，匣1790可為獨立的，此意味著單獨臂，或控制器在獨立處置各匣。在另一實施例中，可獨立實現對準，但可同步化其他動作。在此實施例中，受體基板390、490、590或1590可移動以促進對準之後之傳送。在另一實例中，匣1790一起移動以促進對準之後之傳送。在另一實例中，匣1790及受體基板390、490、590或1590兩者可移動以促進傳送。在另一情況中，匣1790可預先組裝。在此情況中，一框架或基板可固持經組裝匣1790。17A and 17B illustrate a structure having a plurality of cassettes 1790. The position of the cassette 1790 as described above is selected so that the same area in the receiver substrate 390, 490, 590 or 1590 is overlapped with the cassette 1790 having the same microdevice during different transfer cycles. In one example, the cassette 1790 may be independent, which means that a separate arm, or controller, is handling each cassette independently. In another embodiment, alignment can be achieved independently, but other actions can be synchronized. In this embodiment, the acceptor substrate 390, 490, 590, or 1590 can be moved to facilitate transport after alignment. In another example, the cassettes 1790 are moved together to facilitate transfer after alignment. In another example, both the cassette 1790 and the receptor substrate 390, 490, 590, or 1590 can be moved to facilitate transport. In another case, the cassette 1790 may be pre-assembled. In this case, a frame or substrate may hold the assembled cassette 1790.

匣1790之間的距離X3、Y3可為匣1790之寬度X1、X2或長度Y1、Y2之一倍數。距離可為不同方向上之移動步數之一函數。例如，X3 = KX1+HX2，其中K係(直接或間接)向左之移動步數且H係(直接或間接)向右之移動步驟以用於填充一受體基板390、490、590或1590。其可用於匣1790之間的距離Y3與長度Y1及Y2。如在圖17A中展示，匣1790可在一個或兩個方向上對準。在圖17B中展示另一實例中，匣1790在至少一個方向上未對準。各匣1790可具有對朝受體基板390、490、590或1590施加壓力及溫度之獨立控制。取決於受體基板390、490、590或1590與匣1790之間的移動之方向，其他配置亦係可能的。The distances X3 and Y3 between the boxes 1790 may be multiples of the width X1, X2 or the length Y1, Y2 of the boxes 1790. Distance can be a function of the number of steps in different directions. For example, X3 = KX1 + HX2, where K is the number of steps (directly or indirectly) to the left and H is the number of steps (directly or indirectly) to the right for filling a receptor substrate 390, 490, 590, or 1590. . It can be used for the distance Y3 between the cassettes 1790 and the lengths Y1 and Y2. As shown in Figure 17A, the cassette 1790 can be aligned in one or both directions. In another example shown in FIG. 17B, the cassette 1790 is misaligned in at least one direction. Each cassette 1790 may have independent control of pressure and temperature applied to the receiver substrate 390, 490, 590, or 1590. Depending on the direction of movement between the receiver substrate 390, 490, 590, or 1590 and the cassette 1790, other configurations are possible.

在另一實例中，匣1790可具有不同裝置且因此使用不同裝置填充受體基板390、490、590或1590中之不同區域。在此情況中，匣1790與受體基板390、490、590或1590之間的相對位置在各傳送週期之後改變以使用來自不同匣1790之所有所需微裝置填充不同區域。In another example, the cassette 1790 may have different devices and therefore use different devices to fill different areas in the receptor substrate 390, 490, 590, or 1590. In this case, the relative position between the cassette 1790 and the receiver substrate 390, 490, 590, or 1590 is changed after each transfer cycle to fill different areas with all required microdevices from different cassettes 1790.

在另一實施例中，製備匣1790之若干陣列。此處，在裝置自第一匣陣列傳送至受體基板390、490、590或1590之後，受體基板390、490、590或1590移動至下一微裝置陣列以充填受體基板390、490、590或1590中之剩餘區域或接收不同裝置。In another embodiment, several arrays of cassettes 1790 are prepared. Here, after the device is transferred from the first cassette array to the receiver substrate 390, 490, 590, or 1590, the receiver substrate 390, 490, 590, or 1590 is moved to the next microdevice array to fill the receiver substrate 390, 490, The remaining area in the 590 or 1590 may receive a different device.

在另一實例中，匣1790可在一彎曲表面上且因此圓形移動提供用於將微裝置傳送至受體基板390、490、590或1590中之接觸。In another example, the cassette 1790 may be on a curved surface and thus circularly moved to provide contact for transferring the microdevice into the receptor substrate 390, 490, 590, or 1590.

圖18A至圖18E凸顯開發微裝置匣且減輕有缺陷微裝置之程序。在圖18A中，在第一步驟1802期間，在一基板上製備一組微裝置。在第二步驟1804期間，可發現與其中有缺陷微裝置之數目大於一臨限值之一系統基板中之像素相關聯之微裝置組。在第三步驟1806期間，可修復在使用匣之微組來填充一系統基板之前之一些或全部有缺陷微裝置。可重新配置或合併一些此等步驟。18A to 18E highlight the process of developing a microdevice cassette and mitigating a defective microdevice. In FIG. 18A, during a first step 1802, a set of microdevices is prepared on a substrate. During the second step 1804, a group of micro-devices associated with pixels in a system substrate where the number of defective micro-devices is greater than a threshold is found. During a third step 1806, some or all of the defective micro-devices can be repaired before using a micro-group of cassettes to fill a system substrate. Some of these steps can be reconfigured or merged.

在圖18B中，在第一步驟1802期間，在一基板上製備一組微裝置。在第二步驟1804期間，可發現與其中有缺陷微裝置之數目大於一臨限值之一系統基板中之像素相關聯之微裝置組。在第三步驟1806期間，可移除微裝置組中之微裝置。In FIG. 18B, during a first step 1802, a set of microdevices is prepared on a substrate. During the second step 1804, a group of micro-devices associated with pixels in a system substrate where the number of defective micro-devices is greater than a threshold is found. During a third step 1806, the microdevices in the microdevice group can be removed.

在圖18C中，在第一步驟1802期間，可發現與其中有缺陷微裝置之數目大於一組匣中之各匣之一臨限值之一系統基板中之像素相關聯之無法傳送微裝置組。在第二步驟1804期間，可選擇其中無法傳送微裝置組之交集最大化之一匣子組。在第三步驟1806期間，可使用用以填充一系統基板之匣子組。In FIG. 18C, during the first step 1802, a group of non-transportable micro devices that is associated with pixels in one of the system substrates where the number of defective micro devices is greater than a threshold of each of the boxes in a set can be found. . During the second step 1804, a box group may be selected in which the intersection of the transmission of the micro device groups is maximized. During a third step 1806, a set of boxes to fill a system substrate may be used.

在圖18D中，在第一步驟1802期間，可發現與不同匣中之系統基板中之像素相關聯之不同微裝置組中之缺陷。在第二步驟1804期間，可選擇與不同匣中之系統基板中之像素相關聯之不同微裝置組中之缺陷。在第三步驟1806期間，可使用用以填充一系統基板之匣子組。In FIG. 18D, during the first step 1802, defects in different microdevice groups associated with pixels in the system substrate in different cassettes can be found. During the second step 1804, defects in different microdevice groups associated with pixels in the system substrate in different cassettes can be selected. During a third step 1806, a set of boxes to fill a system substrate may be used.

在圖18E中，在第一步驟1802期間，可發現與不同匣中之系統基板中之像素相關聯之不同微裝置組中之缺陷。在第二步驟1804期間，可選擇其中最佳化高於一臨限值之與系統基板中之像素相關聯之選定匣中之微裝置組之數目之一匣子組。在第三步驟1806期間，可使用用以填充一系統基板之匣子組。In FIG. 18E, during the first step 1802, defects in different microdevice groups associated with pixels in the system substrate in different cassettes can be found. During the second step 1804, a box group may be selected in which the number of micro-device groups in a selected box associated with pixels in the system substrate that are optimized above a threshold is optimized. During a third step 1806, a set of boxes to fill a system substrate may be used.

圖19展示使用一模板傳送多個匣以使用微裝置填充一系統基板之一實施例。此處，模板具有超過一個匣。在第一步驟1902期間，至少一個匣與具有促進對準程序之某一對準標記之模板對準。在第二步驟1904期間，至少一個匣經接合至模板。接合機構可為不同形式，諸如熱、光學、真空、凡得瓦力、機械夾具等。可存在重複步驟1902、1904以將更多匣接合至模板之一循環1906。接著，在步驟1908中，模板與受體基板對準。在步驟1910中，微裝置從模板轉移至系統基板。FIG. 19 shows an embodiment of transferring a plurality of cassettes using a template to fill a system substrate with a microdevice. Here, the template has more than one cassette. During a first step 1902, at least one cassette is aligned with a template having an alignment mark that facilitates the alignment process. During a second step 1904, at least one cassette is joined to the template. The engagement mechanism can be in different forms, such as thermal, optical, vacuum, van der Waals, mechanical fixtures, and the like. There may be a loop 1906 of repeating steps 1902, 1904 to join more cassettes to the template. Next, in step 1908, the template is aligned with the acceptor substrate. In step 1910, the microdevice is transferred from the template to the system substrate.

圖20展示一模板傳送系統之一實例。此處，模板2002具有多個匣2004，該多個匣2004可裝載於一結構2002-2上。該結構2002-2可供應更大剛度以及一高輪廓。可針對各結構2002-2獨立控制高度輪廓。結構2002-2可具有與匣相同、小於匣或大於匣之大小。此結構2002-2亦可為一接合設備，其輔助微裝置自匣2004至受體基板2010中之傳送。接合設備可提供壓力、溫度、光學及其他類型之力以輔助傳送。在另一情況中，接合設備2006在模板2002之另一側處。同樣地，某一支撐結構2008可將模板固持於適當位置中。支撐件2008可在模板2002之任一側處。在一個情況中，支撐結構可與接合設備相同。在另一情況中，存在針對各匣之一單獨接合設備。在另一情況中，接合設備對至少超過一個匣係相同的。受體基板2010亦具有支撐結構2014、2016。支撐結構可在受體基板之任一側處。在一個情況中，受體基板可具有可輔助或起始接合程序之接合設備2012。接合設備2006或2012可用於結合。支撐結構2014可與受體接合設備2012相同。在另一情況中，多個模板可用於填充一受體基板。此處，各模板可與受體基板獨立對準。FIG. 20 shows an example of a template transfer system. Here, the template 2002 has a plurality of cassettes 2004 that can be loaded on a structure 2002-2. This structure 2002-2 can provide greater rigidity and a high profile. The height profile can be controlled independently for each structure 2002-2. The structure 2002-2 may have the same size as the box, smaller than the box, or larger than the box. This structure 2002-2 can also be a bonding device, which assists the transfer of the microdevice from the cassette 2004 to the receiver substrate 2010. Splicing equipment can provide pressure, temperature, optics, and other types of forces to assist in transmission. In another case, the joining device 2006 is at the other side of the formwork 2002. Similarly, a certain support structure 2008 may hold the formwork in place. The support 2008 may be on either side of the template 2002. In one case, the support structure may be the same as the joining device. In another case, there is a separate engagement device for one of the cassettes. In another case, the engagement device is the same for at least more than one cassette. The acceptor substrate 2010 also has supporting structures 2014 and 2016. The support structure may be on either side of the receptor substrate. In one case, the acceptor substrate may have a bonding device 2012 that can assist or initiate a bonding process. Bonding equipment 2006 or 2012 can be used for bonding. The support structure 2014 may be the same as the receptor engagement device 2012. In another case, multiple templates can be used to fill an acceptor substrate. Here, each template can be independently aligned with the acceptor substrate.

支撐結構可為一吸力設備、磁性、一彈簧加載銷、由加壓氣體(諸如空氣或氮氣)製成之一氣床等。The support structure may be a suction device, magnetic, a spring-loaded pin, an air bed made of a pressurized gas such as air or nitrogen, and the like.

模板2002上之匣2004與接合設備2006之間的區域可具有不同熱及/或機械性質。在一個情況中，其可由具有更高導熱性之不同材料製成。在另一情況中，通孔可在不同區域中或至少在匣2004與設備2006之間的區域及其他區域之一者中形成於模板上。通孔之大小可針對各區域進行調整以調整機械性質。在另一情況中，通孔可使用不同材料充填以調整模板2002之不同區域之機械及/或熱性質。The area between the cassette 2004 on the template 2002 and the bonding device 2006 may have different thermal and / or mechanical properties. In one case, it can be made of a different material with higher thermal conductivity. In another case, the through holes may be formed on the template in different regions or at least one of the region between the cassette 2004 and the device 2006 and one of the other regions. The size of the through hole can be adjusted for each area to adjust the mechanical properties. In another case, the through holes may be filled with different materials to adjust the mechanical and / or thermal properties of different areas of the template 2002.

一垂直光電堆疊層包含一基板、作用層、作用層與基板之間的至少一個緩衝層及緩衝層與作用層之間的至少一個分離層，其中作用層可藉由改變分離層之性質而自基板實體移除，而緩衝層保留在基板上。A vertical photovoltaic stack layer includes a substrate, an active layer, at least one buffer layer between the active layer and the substrate, and at least one separation layer between the buffer layer and the active layer. The active layer can be changed by changing the properties of the separation layer. The substrate is physically removed, while the buffer layer remains on the substrate.

在一項實施例中，改變(若干)分離層之性質之程序包含化學反應蝕刻或使分離層變形。In one embodiment, the procedure for changing the nature of the separation layer (s) includes chemically etching or deforming the separation layer.

在另一實施例中，改變(若干)分離層之性質之程序包含曝光於一光電波，從而使分離層變形。In another embodiment, the procedure of changing the properties of the separation layer (s) includes exposing to a photoelectric wave, thereby deforming the separation layer.

在另一實施例中，改變(若干)分離層之性質之程序包含一溫度改變，從而使分離層變形。In another embodiment, the procedure for changing the properties of the separation layer (s) includes a temperature change, thereby deforming the separation layer.

在一項實施例中，再使用緩衝層以開發新的光電堆疊層包含表面處理。In one embodiment, the reuse of the buffer layer to develop a new photovoltaic stack layer includes surface treatment.

在一項實施例中，表面處理使用化學或物理蝕刻或拋光。In one embodiment, the surface treatment uses chemical or physical etching or polishing.

在另一實施例中，表面處理使用緩衝層之一額外薄層之沈積以用於表面重塑。In another embodiment, the surface treatment uses the deposition of an additional thin layer of a buffer layer for surface remodeling.

在一項實施例中，光電裝置係一發光二極體。In one embodiment, the optoelectronic device is a light emitting diode.

在一項實施例中，分離層可為氧化鋅。In one embodiment, the separation layer may be zinc oxide.

本發明之一實施例包括一連續像素化結構，其包含完全或部分連續作用層、像素化接觸件及/或電流擴散層。An embodiment of the present invention includes a continuous pixelated structure including a fully or partially continuous active layer, a pixelated contact, and / or a current diffusion layer.

在此實施例中，一襯墊及/或接合層可存在於一像素化接觸件及/或電流擴散層之頂部上。In this embodiment, a pad and / or bonding layer may be present on top of a pixelated contact and / or a current diffusion layer.

在上述實施例中，一電介質開口可存在於各像素化接觸件及/或電流擴散層之頂部上。In the above embodiments, a dielectric opening may exist on top of each of the pixelated contacts and / or the current diffusion layer.

另一實施例包括包含微裝置之一施體基板，其中接合襯墊及填料層充填微裝置之間的空間。Another embodiment includes a donor substrate including a microdevice, wherein a bonding pad and a filler layer fill a space between the microdevices.

另一實施例包括包含一接合層之一臨時基板，來自施體基板之微裝置接合至該接合層。Another embodiment includes a temporary substrate including a bonding layer to which a microdevice from a donor substrate is bonded.

另一實施例包括一熱傳送技術，其包含下列步驟：Another embodiment includes a heat transfer technology, which includes the following steps:

1)將一臨時基板上之微裝置對準至一系統基板之接合襯墊；1) Align the micro device on a temporary substrate to the bonding pad of a system substrate;

2)系統基板上之接合襯墊之熔點高於臨時基板中之接合層之熔點；2) The melting point of the bonding pad on the system substrate is higher than the melting point of the bonding layer in the temporary substrate;

3)產生一熱分佈，其熔化該等接合襯墊及層兩者且在此後，保持接合層熔化且接合襯墊固化；及3) generating a heat distribution that melts both the bonding pads and layers and thereafter, keeps the bonding layer melted and the bonding pads solidifying; and

4)將臨時基板與系統基板分離；4) Separate the temporary substrate from the system substrate;

在傳送技術中之另一實施例中，藉由局部熱源或全域熱源或兩者產生熱分佈。In another embodiment of the transmission technology, the heat distribution is generated by a local heat source, a global heat source, or both.

另一實施例包括一微裝置結構，其中在藉由一形式之剝離程序自施體基板釋放微裝置之後，至少一個錨將微裝置固持至施體基板。Another embodiment includes a microdevice structure in which at least one anchor holds the microdevice to the donor substrate after the microdevice is released from the donor substrate by a form of stripping procedure.

另一實施例包括用於微裝置結構之一傳送技術，其中錨在微裝置藉由推力或藉由拉力接合至一受體基板中之一襯墊之後或期間釋放微裝置。Another embodiment includes a transfer technique for a microdevice structure, wherein the anchor releases the microdevice after or during the time when the microdevice is joined to a pad in a receptor substrate by pushing or pulling.

在另一實施例中，根據微裝置結構之錨包括自微裝置之側延伸至基板之至少一個層。In another embodiment, the anchor according to the microdevice structure includes at least one layer extending from a side of the microdevice to the substrate.

在另一實施例中，根據微裝置結構之錨包括一空隙及空隙頂部上之至少一個層。In another embodiment, the anchor according to the microdevice structure includes a void and at least one layer on top of the void.

在另一實施例中，根據微裝置結構之錨包括圍繞裝置之充填層。In another embodiment, the anchor according to the microdevice structure includes a filling layer surrounding the device.

另一實施例包括根據微裝置結構之一結構，其中剝離微裝置與施體基板之間的層之黏度藉由控制溫度而增大以充當一錨。Another embodiment includes a structure according to a microdevice structure, wherein the viscosity of the layer between the peeling microdevice and the donor substrate is increased by controlling the temperature to serve as an anchor.

另一實施例包括微裝置結構中之錨之一釋放程序，其中調整溫度以減小錨與微裝置之間的力。Another embodiment includes a release procedure for one of the anchors in the microdevice structure, wherein the temperature is adjusted to reduce the force between the anchor and the microdevice.

另一實施例包括將微裝置傳送至一受體基板之一程序，其中微裝置形成於一匣中；將匣與受體基板中之選定著陸區域對準；及將與選定著陸區域相關聯之匣中之微裝置傳送至受體基板。Another embodiment includes a procedure for transferring a microdevice to a receptor substrate, wherein the microdevice is formed in a cassette; aligning the cassette with a selected landing area in the receptor substrate; and associating the selected landing area with the selected landing area. The microdevice in the box is transferred to the receiver substrate.

另一實施例包括將微裝置傳送至一受體基板之一程序，其中微裝置形成於一匣中；選擇具有小於一臨限值之有缺陷微裝置之一組微裝置；將匣中之選定微裝置組與受體基板中之選定著陸區域對準；及將與選定著陸區域相關聯之匣中之微裝置傳送至受體基板。Another embodiment includes a procedure for transferring a microdevice to a receptor substrate, wherein the microdevice is formed in a box; selecting a group of microdevices with defective microdevices having a threshold value less than one; The microdevice set is aligned with a selected landing area in the acceptor substrate; and the microdevices in a cassette associated with the selected landing area are transferred to the acceptor substrate.

一實施例包含匣，其具有在其中傳送之多類型之微裝置。One embodiment includes a cassette with multiple types of microdevices transmitted therein.

一實施例包括一微裝置匣，其中一犧牲層將微裝置之至少一個側與填料層或接合層分離。An embodiment includes a microdevice cassette, wherein a sacrificial layer separates at least one side of the microdevice from a filler layer or a bonding layer.

一實施例，其中移除犧牲層以自填料層或接合層釋放微裝置。An embodiment, wherein the sacrificial layer is removed to release the microdevice from the filler layer or the bonding layer.

一實施例，其中犧牲層在一些條件(諸如高溫)下自填料釋放微裝置。An embodiment, wherein the sacrificial layer releases the microdevice from the filler under conditions such as high temperature.

可測試微裝置用於提取與微裝置相關之資訊(包含但不限於缺陷、均勻性、操作條件等)。在一項實施例中，(若干)微裝置臨時接合至一匣，該匣具有一或多個電極來測試微裝置。在一項實施例中，在微裝置定位於匣中之後，沈積另一電極。此電極可用於在圖案化之前或之後測試微裝置。在一項實施例中，匣經放置於一預定義位置(其可為一固持器)中。匣及/或受體基板移動以對準。將至少一個選定微裝置傳送至受體基板。若匣上/中可存在更多微裝置，則匣或受體基板移動以與相同受體基板中之一新的區域或一新的受體基板對準且至少另一(其他)選定裝置被傳送至新的位置。此程序可繼續直至匣不具有足夠之微裝置，此時，一新的匣可被放置於預定義位置中。在一個實例中，基於自匣提取之資訊控制選定裝置之傳送。在一個實例中，自匣提取之缺陷資訊可用於藉由消除具有大於一臨限值之一缺陷數之一組微裝置之傳送而將傳送至受體基板之有缺陷裝置之數目限制於低於一臨限數目或經傳送缺陷之累積數目將超過一臨限值。在另一實例中，匣將基於一或多個經提取參數分組且各分組將用於不同應用。在另一情況中，基於一或多個參數具有接近效能之匣將用於一個受體基板中。此處呈現之實例可經組合以改良匣傳送效能。Testable microdevices are used to extract information related to microdevices (including but not limited to defects, uniformity, operating conditions, etc.). In one embodiment, the microdevice (s) are temporarily bonded to a cassette having one or more electrodes to test the microdevice. In one embodiment, after the microdevice is positioned in the cassette, another electrode is deposited. This electrode can be used to test microdevices before or after patterning. In one embodiment, the cassette is placed in a predefined position (which may be a holder). The cassette and / or the receiver substrate are moved for alignment. Transfer at least one selected microdevice to the acceptor substrate. If more microdevices can be on / in the cassette, the cassette or receptor substrate is moved to align with a new area or a new receptor substrate in the same receptor substrate and at least another (other) selected device is Teleport to a new location. This process can continue until the cassette does not have enough microdevices, at which time a new cassette can be placed in a predefined location. In one example, the transmission of the selected device is controlled based on the information extracted from the cassette. In one example, the defect information extracted from the cassette can be used to limit the number of defective devices transmitted to the receiver substrate to less than one by removing transmission of a group of microdevices with a number of defects greater than a threshold. A threshold number or the cumulative number of transmitted defects will exceed a threshold. In another example, bins will be grouped based on one or more extracted parameters and each grouping will be used for a different application. In another case, a cartridge with near performance based on one or more parameters will be used in one acceptor substrate. The examples presented here can be combined to improve cassette delivery performance.

在一實施例中，實體接觸件及壓力及/或溫度可用於將裝置自匣傳送至受體基板中。此處，壓力及/或溫度可產生一接合力(或抓力)來將微裝置固持至受體基板及/或溫度亦可減小微裝置與匣之間的接觸力。因此，實現微裝置至受體基板之傳送。在此情況中，受體基板上分配給微裝置之位置相較於受體基板之剩餘部分具有一更高輪廓以增強傳送程序。在一實施例中，匣在可能接觸受體基板之非所要區域(諸如在傳送程序期間分配給其他類型之微裝置之位置)之區域中不具有微裝置。可組合此兩個實例。在一實施例中，基板上針對微裝置之分配位置可已經使用黏著劑選擇性地濕潤或使用接合合金覆蓋，或將一額外結構放置於分配位置上。在一衝壓程序中，可使用一單獨匣、印刷或其他程序。在一實施例中，匣上之選定微裝置可移動為更靠近受體基板以增強選擇性傳送。在另一情況中，受體基板施加一拉力以輔助或起始自匣之微裝置傳送。拉力可與其他力組合。In one embodiment, the physical contacts and pressure and / or temperature can be used to transfer the device from the cassette to the receiver substrate. Here, the pressure and / or temperature can generate a bonding force (or grasping force) to hold the microdevice to the receptor substrate and / or the temperature can also reduce the contact force between the microdevice and the cassette. Therefore, the transfer from the microdevice to the receiver substrate is realized. In this case, the position allocated to the microdevice on the acceptor substrate has a higher profile than the rest of the acceptor substrate to enhance the transfer process. In one embodiment, the cassette does not have microdevices in areas that may contact unintended areas of the receptor substrate, such as locations allocated to other types of microdevices during the transfer process. These two instances can be combined. In one embodiment, the dispensing position on the substrate for the microdevice may have been selectively wetted with an adhesive or covered with a bonding alloy, or an additional structure may be placed on the dispensing position. In a stamping process, a separate cassette, printing or other process can be used. In one embodiment, selected microdevices on the cassette can be moved closer to the receptor substrate to enhance selective delivery. In another case, the acceptor substrate applies a pulling force to assist or initiate transmission from the cassette's microdevice. The pulling force can be combined with other forces.

在一項實施例中，一外殼將支撐匣中之微裝置。外殼可經製造為圍繞施體基板或匣基板上之微裝置或單獨製造，且接著將微裝置移動至內側且接合至匣。在一項實施例中，可存在沈積於匣基板頂部上之至少一個聚合物(或另一類型之材料)。將來自施體基板之微裝置推至聚合物層中。微裝置與施體基板選擇性或大體分離。該層可在裝置與施體基板分離之前或之後固化。此層可尤其在多個不同裝置整合於匣中時圖案化。在此情況中，該層可針對一個類型(埋設於該層中且與其等施體分離之微裝置)產生。接著，針對下一類型之微裝置沈積且圖案化另一層。接著，第二微裝置埋設於相關聯層中。在所有情況中，此層可覆蓋微裝置之部分或整個裝置。在另一情況中，在微裝置被傳送至匣之後藉由聚合物、有機或其他層建立外殼。外殼可具有不同形狀。在一個情況中，外殼可匹配裝置形狀。外殼側壁可比微裝置高度短。外殼側壁可在傳送週期之前連接至微裝置以提供對匣中之微裝置之不同後處理及用於運輸及儲存之微裝置匣之封裝之支撐。外殼側壁可為分離的或至微裝置之連接可在傳送週期之前或期間藉由不同方法(諸如加熱、蝕刻或曝光)自裝置弱化。可存在將微裝置固持至匣基板之一接觸點。至匣之接觸點可為裝置之一底側或一頂側。接觸點可在傳送之前或期間藉由不同方法(諸如熱、化學程序或曝光)弱化或消除。此程序可對一些選定裝置執行或對匣上之所有微裝置全域地執行。接觸件亦可為導電的以藉由加偏壓於接觸點處之裝置及連接至微裝置之其他電極而實現測試微裝置。匣在傳送週期期間可在受體基板下方以在接觸點被全域地移除或弱化的情況下防止微裝置自外殼跌落。In one embodiment, a housing will support the microdevices in the cassette. The housing can be manufactured to surround the microdevice on the donor substrate or cassette substrate or separately, and then move the microdevice to the inside and engage the cassette. In one embodiment, there may be at least one polymer (or another type of material) deposited on top of the cassette substrate. The microdevice from the donor substrate is pushed into the polymer layer. The microdevice is selectively or substantially separated from the donor substrate. This layer can be cured before or after the device is separated from the donor substrate. This layer can be patterned especially when multiple different devices are integrated in the cassette. In this case, the layer may be generated for one type (a microdevice buried in the layer and separated from its donors). Next, another layer is deposited and patterned for the next type of microdevice. The second microdevice is then buried in the associated layer. In all cases, this layer can cover part or the entire device of the microdevice. In another case, the shell is created by a polymer, organic or other layer after the microdevice is transferred to the cassette. The housing can have different shapes. In one case, the housing can match the shape of the device. The housing sidewalls can be shorter than the height of the microdevice. The housing sidewalls can be connected to the microdevices prior to the transfer cycle to provide different post-processing of the microdevices in the cassette and support for the packaging of the microdevice cassettes for transportation and storage. The housing sidewalls can be separate or the connection to the microdevice can be weakened from the device by different methods, such as heating, etching or exposure, before or during the transfer cycle. There may be a contact point that holds the microdevice to one of the cassette substrates. The contact point to the box can be one of the bottom side or the top side of the device. Contact points can be weakened or eliminated by different methods, such as heat, chemical procedures, or exposure, before or during transmission. This procedure can be performed on some selected devices or globally on all microdevices on the box. The contact may also be conductive to enable testing of the microdevice by biasing the device at the contact point and other electrodes connected to the microdevice. The cassette can be under the receptor substrate during the transfer cycle to prevent the microdevice from falling from the housing if the contact point is globally removed or weakened.

在一項實施例中，微裝置匣可包含將微裝置固持至匣表面之至少一個錨。移動匣及/或受體基板，使得匣中之一些微裝置與受體基板中之一些位置對準。此錨可在將匣及受體基板推向彼此或藉由受體基板拉動裝置期間在壓力下破裂。微裝置可永久保留在受體基板上。錨可在微裝置之側上或微裝置之頂部(或底部)處。In one embodiment, the microdevice cassette may include at least one anchor that holds the microdevice to the surface of the cassette. The cassette and / or the receptor substrate are moved so that some microdevices in the cassette are aligned with some positions in the receptor substrate. This anchor can rupture under pressure during pushing the cassette and the receptor substrate towards each other or pulling the device through the receptor substrate. The microdevice can remain permanently on the acceptor substrate. The anchor may be on the side of the microdevice or at the top (or bottom) of the microdevice.

頂側係面向匣之裝置之側，且底部係微裝置之相對側。其他側被稱為側或側壁。The top side is the side of the device facing the cassette, and the bottom side is the opposite side of the microdevice. The other sides are called sides or side walls.

在一項實施例中，可測試微裝置用於提取與微裝置相關之資訊(包含但不限於缺陷、均勻性、操作條件等)。可將匣放置於一預定義位置(其可為一固持器)中。匣及/或受體基板可移動以對準。可將至少一個選定微裝置傳送至受體基板。若匣上/中可存在更多微裝置，則匣或受體基板可移動以與相同受體基板中之一新的區域或一新的受體基板對準且至少另一(其他)選定裝置可被傳送至新的位置。此程序可繼續直至匣不具有足夠之微裝置，此時，一新的匣將被放置於預定義位置中。在一個情況中，可基於自匣提取之資訊控制選定裝置之傳送。在一個情況中，自匣提取之缺陷資訊可用於藉由消除具有大於一臨限值之一缺陷數之一組微裝置之傳送而將被傳送至受體基板之有缺陷裝置之數目限制於低於一臨限數目或經傳送缺陷之累積數目超過一臨限值。在另一情況中，匣將基於一或多個經提取參數分組且各分組可用於不同應用。在另一情況中，基於一或多個參數具有接近效能之匣可用於一個受體基板中。此處呈現之實例可經組合以改良匣傳送效能。In one embodiment, the testable microdevice is used to extract information related to the microdevice (including but not limited to defects, uniformity, operating conditions, etc.). The cassette can be placed in a predefined position, which can be a holder. The cassette and / or the receiver substrate can be moved for alignment. At least one selected microdevice can be transferred to the acceptor substrate. If more microdevices can be on / in the cassette, the cassette or receptor substrate can be moved to align with a new area or a new receptor substrate in the same receptor substrate and at least another (other) selected device Can be teleported to a new location. This process can continue until the cassette does not have enough microdevices, at which time a new cassette will be placed in a predefined location. In one case, the transmission of the selected device may be controlled based on the information extracted from the cassette. In one case, the defect information extracted from the cassette can be used to limit the number of defective devices being transmitted to the receiver substrate to a low level by eliminating transmission of a group of microdevices having a number of defects greater than a threshold The cumulative number of defects in a threshold or transmitted exceeds a threshold. In another case, the bins will be grouped based on one or more extracted parameters and each grouping may be used for a different application. In another case, a cartridge with near performance based on one or more parameters can be used in one acceptor substrate. The examples presented here can be combined to improve cassette delivery performance.

一項實施例包括一種將微裝置傳送至一受體基板之方法。該方法包含：One embodiment includes a method of transferring a microdevice to a receptor substrate. The method contains:

a)製備具有一基板之一匣，其中微裝置經定位於該匣基板之至少一個表面上且在一區域中具有比在受體基板中之相同大小對應區域中之微裝置位置更多之微裝置。a) A cassette having a substrate is prepared, wherein a microdevice is positioned on at least one surface of the cassette substrate and has more micro-devices in a region than micro-device locations in a corresponding region of the same size in the receiver substrate Device.

b)藉由提取至少一個參數而測試匣上之裝置。b) Testing the device on the cassette by extracting at least one parameter.

c)將匣拾取或傳送至其中微裝置面向受體基板之一位置。c) Picking up or transferring the cassette to a position where the microdevice faces the receiver substrate.

d)使用測試資料來選擇匣上之一組微裝置。d) Use the test data to select a set of microdevices on the box.

e)對準匣上之該選定微裝置組與受體基板上之一選定位置。將微裝置組自匣傳送至受體基板。e) Align the selected microdevice group on the cassette with a selected position on the receiver substrate. The microdevice set is transferred from the cassette to the receiver substrate.

f)程序d及e可繼續直至匣不具有任何有用之裝置或受體基板被完全填充。f) Procedures d and e can continue until the cassette does not have any useful devices or the receiver substrate is completely filled.

一項實施例包括一種具有超過一個類型之微裝置之匣，該等微裝置按與受體基板中相同之節距定位於匣中。One embodiment includes a cassette having more than one type of microdevices positioned in the cassette at the same pitch as in the receiver substrate.

一項實施例包括一種具有一基板之匣，其中微裝置(直接或間接)定位於其表面上，且微裝置依列或行偏斜，使得至少任一個列或一行之邊緣不與至少另一列或一行之邊緣對準。An embodiment includes a cassette having a substrate, wherein the microdevices are positioned (directly or indirectly) on its surface, and the microdevices are skewed in columns or rows such that the edges of at least any one column or row are not aligned with at least another column Or the edges of a line are aligned.

一項實施例係一種將微裝置傳送至一受體基板之方法。方法包含將一微裝置陣列傳送至一基板中，其中傳送微裝置之至少任一個列或一行之邊緣不與經傳送微裝置之至少另一列或一行之邊緣對準。One embodiment is a method of transferring a microdevice to a receptor substrate. The method includes transferring an array of microdevices into a substrate, wherein edges of at least any one column or row of the transfer microdevices are not aligned with edges of at least another column or row of the transferred microdevices.

一項實施例包括一種將微裝置傳送至一受體基板之方法。該方法包含將一裝置陣列自一施體基板傳送至一受體基板，其中在類似於經傳送陣列之大小之受體基板上之任何區域中，至少存在具有來自與對應於經傳送陣列之施體基板不同之兩個區域之微裝置之一個列或行。One embodiment includes a method of transferring a microdevice to a receptor substrate. The method includes transferring an array of devices from a donor substrate to an acceptor substrate, wherein in any area on the acceptor substrate that is similar in size to the transferred array, there are at least One column or row of microdevices in two regions of the bulk substrate.

一項實施例包括一種將微裝置陣列傳送至一受體基板中之程序，其中微裝置在陣列之邊緣處偏斜以消除陡變。One embodiment includes a procedure for transferring an array of microdevices into a receiver substrate, wherein the microdevices are skewed at the edges of the array to eliminate sharp changes.

另一實施例包括一種將微裝置陣列傳送至一受體基板中之程序，其中在兩個微裝置陣列之相鄰邊緣處之微裝置之效能在傳送之前匹配。Another embodiment includes a procedure for transferring a micro-device array into an acceptor substrate, wherein the performance of the micro-devices at adjacent edges of two micro-device arrays are matched before transfer.

另一實施例包括一種將微裝置陣列傳送至一受體基板中之程序，其中至少自微裝置施體基板之兩個不同區域填充微裝置陣列。Another embodiment includes a procedure for transferring a microdevice array into a receiver substrate, wherein the microdevice array is filled from at least two different regions of the microdevice donor substrate.

另一實施例包括一種將微裝置陣列自匣傳送至一受體基板中之程序，其中若干微裝置匣經放置於對應於受體基板之不同區域之不同位置中，則匣與受體基板對準，且微裝置自匣傳送至受體基板。Another embodiment includes a procedure for transferring a microdevice array from a cassette to a receptor substrate, wherein a plurality of microdevice cassettes are placed in different positions corresponding to different regions of the receptor substrate, and the cassette and the receptor substrate pair And the microdevice is transferred from the cassette to the receiver substrate.

根據一項實施例，提供一種將複數個微裝置傳送至一受體基板中之方法。該方法包括：將該複數個微裝置配置於一或多個匣中；將該一或多個匣與具有至少一個對準標記之一模板對準；將該一或多個匣與該模板接合；將該模板與該受體基板對準；及將該複數個微裝置自該模板傳送至該受體基板中。According to one embodiment, a method is provided for transferring a plurality of microdevices into an acceptor substrate. The method includes: arranging the plurality of micro-devices in one or more cassettes; aligning the one or more cassettes with a template having at least one alignment mark; and engaging the one or more cassettes with the template ; Aligning the template with the acceptor substrate; and transferring the plurality of microdevices from the template into the acceptor substrate.

根據一些實施例，將模板與受體基板對準包括拉伸模板且藉由以下之一者接合一或多個匣與模板：一熱接合、一光學接合、一真空接合、凡得瓦力或一機械夾具。According to some embodiments, aligning the template with the receptor substrate includes stretching the template and joining one or more cassettes to the template by one of the following: a thermal bond, an optical bond, a vacuum bond, Van der Waals or A mechanical fixture.

根據另一實施例，提供一種傳送設置。該傳送設置包括：一模板，其固持充填有微裝置之至少一個匣；及該模板上之一接合設備，其協助藉由一傳送力之該等微裝置自該至少一個匣至一受體基板之一傳送。According to another embodiment, a transmission setting is provided. The transfer setup includes: a template holding at least one cassette filled with microdevices; and a bonding device on the template that assists the microdevices with a transfer force from the at least one cassette to a receiver substrate One of them.

根據又一實施例，各匣具有一單獨接合設備。傳送設置進一步包括用以將模板固持於適當位置中之一支撐結構及該模板與該至少一個匣之間的一高度調整設備。支撐結構包括以下之一者：一吸力設備、一彈簧加載銷及由加壓氣體製成之一氣床。According to yet another embodiment, each cassette has a separate engagement device. The transfer arrangement further includes a support structure for holding the template in place and a height adjustment device between the template and the at least one cassette. The support structure includes one of the following: a suction device, a spring-loaded pin, and an air bed made of pressurized gas.

根據進一步實施例，至少一個匣與模板上之接合設備之間的一區域具有不同熱及機械性質，且在匣與在模板上之接合設備之間的不同區域上形成複數個通孔。複數個通孔之一大小可針對各區域進行調整以調整熱及機械性質。According to a further embodiment, a region between the at least one cassette and the bonding device on the template has different thermal and mechanical properties, and a plurality of through holes are formed in different regions between the cassette and the bonding device on the template. The size of one of the plurality of through holes can be adjusted for each region to adjust the thermal and mechanical properties.

根據又一實施例，提供一種將複數個微裝置傳送至一系統基板中之方法。該方法包括：將該複數個微裝置配置於該系統基板中之一或多個匣上；選擇各匣中之一或多個可傳送微裝置組；識別各可傳送微裝置組中之有缺陷微裝置之一數目；且同時調整該等有缺陷微裝置至該系統基板中之傳送。According to yet another embodiment, a method for transferring a plurality of micro-devices to a system substrate is provided. The method includes: disposing the plurality of micro-devices on one or more cassettes in the system substrate; selecting one or more transportable micro-device groups in each cassette; and identifying defects in each transportable micro-device group One of the number of micro-devices; and simultaneously adjusting the transmission of the defective micro-devices into the system substrate.

根據另一實施例，其中調整有缺陷微裝置之傳送包括：若有缺陷微裝置之數目之一總和超過一臨限值，則修復或移除各匣中之有缺陷微裝置；選擇一或多個匣之一子組，其中微裝置組之無法傳送組之一交集係最大值；且使用匣子組來調整至系統基板之傳送；選擇一匣子組，其中有缺陷微裝置之數目之一總和小於一臨限值；且使用匣子組來填充系統基板；及選擇一匣子組，其中最佳化高於一臨限值之有缺陷微裝置之數目之總和；且使用匣子組來填充系統基板。According to another embodiment, adjusting the transmission of the defective micro-devices includes: if the sum of one of the number of defective micro-devices exceeds a threshold value, repairing or removing the defective micro-devices in each cassette; selecting one or more One subgroup of each box, where the maximum value of the intersection of the microdevice group's non-transmittable group; and use the box group to adjust the transmission to the system substrate; select a box group where the sum of one of the defective microdevices is less A threshold value; and a box group is used to fill the system substrate; and a box group is selected in which the sum of the number of defective micro-devices above a threshold value is optimized; and a box group is used to fill the system substrate.

根據又一實施例，方法進一步包括透過系統基板加偏壓於微裝置以測試經傳送微裝置與受體基板之間的一連接且調整接合參數以修復經識別數目個有缺陷微裝置。According to yet another embodiment, the method further includes biasing the microdevice through the system substrate to test a connection between the transmitted microdevice and the receiver substrate and adjusting the bonding parameters to repair the identified number of defective microdevices.

已為繪示及描述之目的呈現本發明之一或多個實施例之先前描述。其不意在具窮舉性或使本發明受限於所揭示之精確形式。鑑於上述教示，許多修改及變化係可能的。本發明之範疇不意在為此實施方式限制，而係藉由本發明隨附之發明申請專利範圍限制。The previous description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. In view of the above teachings, many modifications and variations are possible. The scope of the present invention is not intended to be limited to this embodiment, but is to be limited by the scope of patent application for the invention accompanying the present invention.

110‧‧‧施體基板110‧‧‧ donor substrate

112‧‧‧導電層 112‧‧‧ conductive layer

114‧‧‧功能層 114‧‧‧Functional layer

116‧‧‧導電層 116‧‧‧ conductive layer

118‧‧‧電流散佈層 118‧‧‧Current spreading layer

120‧‧‧電介質層 120‧‧‧Dielectric layer

128‧‧‧整平層 128‧‧‧leveling layer

130‧‧‧開口 130‧‧‧ opening

132‧‧‧襯墊 132‧‧‧ cushion

150‧‧‧系統基板 150‧‧‧system substrate

152‧‧‧層 152‧‧‧Floor

154‧‧‧系統基板襯墊 154‧‧‧System substrate gasket

156‧‧‧電介質層 156‧‧‧Dielectric layer

170‧‧‧反射層或黑色基質 170‧‧‧ reflective layer or black matrix

210‧‧‧施體基板 210‧‧‧ donor substrate

212‧‧‧導電層 212‧‧‧ conductive layer

214‧‧‧功能層 214‧‧‧Functional layer

216‧‧‧導電層 216‧‧‧ conductive layer

218‧‧‧電流散佈層 218‧‧‧Current spreading layer

228‧‧‧層 228‧‧‧Floor

232‧‧‧接合襯墊層 232‧‧‧Joint pad

250‧‧‧系統基板 250‧‧‧system substrate

252‧‧‧其他層 252‧‧‧Other floors

254‧‧‧襯墊 254‧‧‧pad

256‧‧‧電介質層 256‧‧‧Dielectric layer

270‧‧‧反射層或黑色基質 270‧‧‧ reflective layer or black matrix

310‧‧‧施體基板 310‧‧‧ donor substrate

312‧‧‧第一底部導電層 312‧‧‧First bottom conductive layer

314‧‧‧功能層 314‧‧‧Function layer

316‧‧‧第二頂部導電層 316‧‧‧Second top conductive layer

332‧‧‧頂部接觸件 332‧‧‧Top contact

372‧‧‧其他層 372‧‧‧Other levels

372-2‧‧‧犧牲層 372-2‧‧‧ sacrifices

374‧‧‧填料層 374‧‧‧filler layer

376‧‧‧臨時基板/匣 376‧‧‧Temporary substrate / box

378‧‧‧基板接合層 378‧‧‧Substrate bonding layer

380‧‧‧接觸接合層 380‧‧‧contact bonding layer

382‧‧‧襯墊 382‧‧‧pad

390‧‧‧系統基板 390‧‧‧system substrate

412‧‧‧第一底部導電層 412‧‧‧ the first bottom conductive layer

414‧‧‧功能層 414‧‧‧Functional layer

416‧‧‧第二頂部導電層 416‧‧‧Second top conductive layer

432‧‧‧接觸襯墊/接觸件 432‧‧‧contact pad / contact

472‧‧‧填料 472‧‧‧filler

474‧‧‧充填材料 474‧‧‧Filling material

476‧‧‧臨時基板 476‧‧‧Temporary substrate

476-1‧‧‧錨 476-1‧‧‧ Anchor

478‧‧‧接合層 478‧‧‧ bonding layer

480‧‧‧接觸襯墊 480‧‧‧contact pad

482‧‧‧受體基板襯墊 482‧‧‧Receptor substrate gasket

490‧‧‧系統(受體)基板 490‧‧‧system (receiver) substrate

510‧‧‧施體基板 510‧‧‧ donor substrate

512‧‧‧第一底部導電層 512‧‧‧ the first bottom conductive layer

514‧‧‧功能層 514‧‧‧functional layer

516‧‧‧第二頂部導電層 516‧‧‧Second top conductive layer

532‧‧‧頂部接觸襯墊 532‧‧‧Top contact pad

572‧‧‧鈍化層及/或MIS層 572‧‧‧ passivation layer and / or MIS layer

574‧‧‧填料層 574‧‧‧filler layer

582‧‧‧襯墊 582‧‧‧ cushion

590‧‧‧受體基板 590‧‧‧ receptor substrate

592‧‧‧層/錨 592‧‧‧floor / anchor

594‧‧‧延伸部/錨 594‧‧‧ extension / anchor

596‧‧‧空隙/間隙 596‧‧‧Gap

598‧‧‧橋部 598‧‧‧Bridge

598-2‧‧‧錨 598-2‧‧‧ Anchor

702‧‧‧第一步驟 702‧‧‧First Step

704‧‧‧第二步驟 704‧‧‧Second step

706‧‧‧第三步驟 706‧‧‧third step

707‧‧‧步驟 707‧‧‧step

707A‧‧‧測試步驟 707A‧‧‧Test steps

707B‧‧‧步驟 707B‧‧‧step

708‧‧‧第四步驟 708‧‧‧Fourth step

802‧‧‧第一步驟 802‧‧‧first step

804‧‧‧第二步驟 804‧‧‧Second step

806‧‧‧第三步驟 806‧‧‧The third step

808‧‧‧第四步驟 808‧‧‧Fourth step

810‧‧‧步驟 810‧‧‧step

812‧‧‧步驟 812‧‧‧step

814‧‧‧步驟 814‧‧‧step

902‧‧‧第一步驟 902‧‧‧First Step

902-2‧‧‧第二步驟 902-2‧‧‧Second step

904‧‧‧第三步驟 904‧‧‧third step

906‧‧‧第三步驟 906‧‧‧Third Step

906-1‧‧‧可選步驟 906-1‧‧‧Optional steps

906-2‧‧‧可選步驟 906-2‧‧‧Optional steps

906-3‧‧‧額外調整步驟 906-3‧‧‧ additional adjustment steps

908‧‧‧第四步驟 908‧‧‧Fourth step

910‧‧‧步驟 910‧‧‧step

912‧‧‧步驟 912‧‧‧step

1002‧‧‧第一步驟 1002‧‧‧First Step

1004‧‧‧第二步驟 1004‧‧‧Second step

1006‧‧‧第三步驟 1006‧‧‧Third Step

1008‧‧‧第四步驟 1008‧‧‧Fourth step

1010‧‧‧最後一步驟 1010‧‧‧The last step

1102‧‧‧微裝置 1102‧‧‧Microdevice

1104‧‧‧微裝置 1104‧‧‧Microdevice

1106‧‧‧微裝置 1106‧‧‧Microdevice

1108‧‧‧匣 1108‧‧‧box

1202‧‧‧微裝置 1202‧‧‧microdevice

1204‧‧‧微裝置 1204‧‧‧microdevice

1206‧‧‧微裝置 1206‧‧‧microdevice

1206-2‧‧‧區域 1206-2‧‧‧area

1208‧‧‧匣 1208‧‧‧box

1302‧‧‧微裝置 1302‧‧‧microdevice

1304‧‧‧施體基板 1304‧‧‧ donor substrate

1306‧‧‧支撐層 1306‧‧‧Support layer

1308‧‧‧支撐層 1308‧‧‧Support layer

1480‧‧‧施體基板 1480‧‧‧ donor substrate

1482‧‧‧區塊 1482‧‧‧block

1484‧‧‧交叉線 1484‧‧‧cross line

1580‧‧‧區塊 1580‧‧‧block

1582‧‧‧區塊 1582‧‧‧block

1590‧‧‧受體基板 1590‧‧‧Receptor substrate

1680‧‧‧區塊 1680‧‧‧block

1682‧‧‧區塊 1682‧‧‧block

1684‧‧‧區塊 1684‧‧‧block

1690‧‧‧匣 1690‧‧‧box

1790‧‧‧匣 1790‧‧‧box

1802‧‧‧第一步驟 1802‧‧‧First step

1804‧‧‧第二步驟 1804‧‧‧Second step

1806‧‧‧第三步驟 1806‧‧‧Third Step

1902‧‧‧第一步驟 1902‧‧‧First Step

1904‧‧‧第二步驟 1904‧‧‧Second step

1906‧‧‧循環 1906‧‧‧cycle

1908‧‧‧步驟 1908‧‧‧step

1910‧‧‧步驟 1910‧‧‧step

2002‧‧‧模板 2002‧‧‧Template

2004‧‧‧匣 2004‧‧‧box

2006‧‧‧接合設備 2006‧‧‧Joint Equipment

2008‧‧‧支撐結構 2008‧‧‧Support structure

2010‧‧‧受體基板 2010‧‧‧ Acceptor substrate

2012‧‧‧接合設備 2012‧‧‧Joint Equipment

2014‧‧‧支撐結構 2014‧‧‧Support Structure

2016‧‧‧支撐結構 2016‧‧‧Support Structure

6110‧‧‧施體基板 6110‧‧‧ donor substrate

6112‧‧‧作用層 6112‧‧‧Action layer

6114‧‧‧緩衝層 6114‧‧‧Buffer layer

6116‧‧‧分離層 6116‧‧‧ separation layer

6118‧‧‧緩衝層 6118‧‧‧Buffer layer

6150‧‧‧基板 6150‧‧‧ substrate

6210‧‧‧施體基板 6210‧‧‧ donor substrate

6212‧‧‧島狀區 6212‧‧‧island

6220‧‧‧填料層 6220‧‧‧Filling layer

6262‧‧‧間隙 6262‧‧‧Gap

6263‧‧‧間隙 6263‧‧‧Gap

x1‧‧‧距離 x1‧‧‧distance

x2‧‧‧距離 x2‧‧‧distance

x3‧‧‧距離 x3‧‧‧ distance

y1‧‧‧距離 y1‧‧‧distance

y2‧‧‧節距 y2‧‧‧ pitch

T1‧‧‧熔化溫度 T1‧‧‧melting temperature

T2‧‧‧點 T2‧‧‧point

Tr‧‧‧熔化溫度 Tr‧‧‧ melting temperature

Ts‧‧‧固化溫度 Ts‧‧‧curing temperature

X1‧‧‧寬度 X1‧‧‧Width

X2‧‧‧寬度 X2‧‧‧Width

X3‧‧‧距離 X3‧‧‧distance

Y1‧‧‧長度 Y1‧‧‧ length

Y2‧‧‧長度 Y2‧‧‧ length

Y3‧‧‧距離 Y3‧‧‧distance

將參考表示本發明之較佳實施例之附圖更詳細描述本發明，其中：The invention will be described in more detail with reference to the accompanying drawings which show a preferred embodiment of the invention, in which:

圖1A繪示根據本發明之一實施例之一施體基板上之一側向功能結構之一橫截面視圖；1A illustrates a cross-sectional view of a lateral functional structure on a donor substrate according to an embodiment of the present invention;

圖1B繪示具有沈積於其上之一電流散佈層之圖1A之側向結構之一橫截面視圖；1B illustrates a cross-sectional view of the lateral structure of FIG. 1A with a current spreading layer deposited thereon;

圖1C繪示在圖案化電介質、頂部導電層且沈積一第二電介質層之後之圖1B之側向結構之一橫截面視圖；1C illustrates a cross-sectional view of the lateral structure of FIG. 1B after patterning the dielectric, the top conductive layer, and depositing a second dielectric layer;

圖1D繪示在圖案化第二電介質層之後之側向結構之一橫截面視圖；1D illustrates a cross-sectional view of one of the lateral structures after patterning the second dielectric layer;

圖1E繪示在沈積且圖案化襯墊之後之側向結構之一橫截面視圖；FIG. 1E illustrates a cross-sectional view of one of the lateral structures after the sunken and patterned pad; FIG.

圖1F繪示在使用形成一整合結構之接合區域接合至一系統基板之後之側向結構之一橫截面視圖；FIG. 1F illustrates a cross-sectional view of a lateral structure after bonding to a system substrate using a bonding area forming an integrated structure; FIG.

圖1G繪示在移除施體基板且圖案化底部電極之後之整合結構之一橫截面視圖；1G illustrates a cross-sectional view of an integrated structure after the donor substrate is removed and the bottom electrode is patterned;

圖2A繪示具有襯墊層之一施體基板上之一側向功能結構之另一實施例之一橫截面視圖；2A illustrates a cross-sectional view of another embodiment of a lateral functional structure on a donor substrate having a cushion layer;

圖2B繪示在圖案化襯墊層及接觸及電流散佈層之後之圖2A之側向結構之一橫截面視圖；2B illustrates a cross-sectional view of one of the lateral structures of FIG. 2A after the patterned pad layer and the contact and current spreading layer;

圖2C繪示在充填經圖案化襯墊之間的距離之後之圖2A之側向結構之一橫截面視圖；2C illustrates a cross-sectional view of one of the lateral structures of FIG. 2A after filling the distance between the patterned pads;

圖2D繪示透過經圖案化襯墊對準且接合至系統基板之圖2A之側向結構之一橫截面視圖；2D illustrates a cross-sectional view of one of the lateral structures of FIG. 2A aligned through a patterned pad and bonded to a system substrate;

圖2E繪示其中移除裝置基板之圖2A之側向結構之一橫截面視圖；2E is a cross-sectional view of one of the lateral structures of FIG. 2A with the device substrate removed;

圖3A繪示一裝置(施體)基板上之一台面結構之一橫截面視圖；3A illustrates a cross-sectional view of a mesa structure on a substrate of a device (donor);

圖3B繪示充填圖3A之台面結構之間的空的空間之步驟之一橫截面視圖；3B illustrates a cross-sectional view of one of the steps of filling the empty space between the mesa structures of FIG. 3A;

圖3C繪示將圖3B之裝置(台面結構)傳送至一臨時基板之步驟之一橫截面視圖；3C is a cross-sectional view showing one of the steps of transferring the device (mesa structure) of FIG. 3B to a temporary substrate;

圖3D繪示將圖3C之裝置對準且接合至一系統基板之步驟之一橫截面視圖；3D is a cross-sectional view showing one of the steps of aligning and bonding the device of FIG. 3C to a system substrate;

圖3E繪示將裝置傳送至系統基板之步驟之一橫截面視圖；3E is a cross-sectional view showing one of the steps of transferring the device to the system substrate;

圖3F繪示熱傳送步驟之一熱分佈。FIG. 3F illustrates a heat distribution in one of the heat transfer steps.

圖4A繪示具有溝槽及傳送至其之裝置之一臨時基板之一橫截面視圖；4A illustrates a cross-sectional view of a temporary substrate having a groove and a device transferred thereto;

圖4B繪示在自裝置空間與溝槽之間清除充填物之後之圖4A之臨時基板之一橫截面視圖；4B illustrates a cross-sectional view of one of the temporary substrates of FIG. 4A after the filler is removed between the device space and the trench;

圖4C繪示藉由使釋放表面破裂將裝置傳送至一系統基板之步驟之一橫截面視圖；4C illustrates a cross-sectional view of one of the steps of transferring the device to a system substrate by breaking the release surface;

圖5A繪示在一充填層中具有不同錨之微裝置之實施例之一橫截面視圖；5A illustrates a cross-sectional view of one embodiment of a microdevice with different anchors in a filling layer;

圖5B繪示在後處理充填層之後之微裝置之實例之一橫截面視圖；5B illustrates a cross-sectional view of an example of a microdevice after a post-processing filling layer;

圖5C繪示圖5B之微裝置之一俯視圖；5C is a top view of one of the microdevices of FIG. 5B;

圖5D繪示用於將微裝置傳送至另一基板之傳送步驟之一橫截面視圖；及5D illustrates a cross-sectional view of one of the transfer steps for transferring the microdevice to another substrate; and

圖5E繪示至基板之經傳送微裝置之一橫截面視圖。5E illustrates a cross-sectional view of one of the transferred microdevices to the substrate.

圖6A繪示根據另一實施例之一裝置(施體)基板上之一台面結構之一橫截面視圖；6A illustrates a cross-sectional view of a mesa structure on a device (donor) substrate according to another embodiment;

圖6B繪示充填圖3A之台面結構之間的空的空間之步驟之一橫截面視圖；FIG. 6B is a cross-sectional view showing one of the steps of filling the empty space between the mesa structures of FIG. 3A; FIG.

圖6C繪示將圖6B之裝置(台面結構)傳送至一臨時基板之步驟之一橫截面視圖；6C is a cross-sectional view showing one of the steps of transferring the device (mesa structure) of FIG. 6B to a temporary substrate;

圖6D繪示移除圖6C之底部導電層之部分之步驟之一橫截面視圖；FIG. 6D illustrates a cross-sectional view of a step of removing a portion of the bottom conductive layer of FIG. 6C; FIG.

圖6E繪示在一充填層中具有錨之微裝置之實施例之一橫截面視圖；6E illustrates a cross-sectional view of one embodiment of a microdevice having an anchor in a filling layer;

圖6F繪示在一充填層中具有錨之微裝置之實施例之一橫截面視圖；6F illustrates a cross-sectional view of one embodiment of a microdevice having an anchor in a filling layer;

圖6G繪示在一充填層中具有錨之微裝置之實施例之一橫截面視圖；6G illustrates a cross-sectional view of one embodiment of a microdevice having an anchor in a filling layer;

圖6H繪示本發明之另一實施例中之一初期步驟之一橫截面視圖；6H illustrates a cross-sectional view of an initial step in another embodiment of the present invention;

圖6I繪示圖6H之實施例中之一蝕刻步驟之一橫截面視圖；6I is a cross-sectional view of an etching step in the embodiment of FIG. 6H;

圖6J繪示圖6H之實施例中之一分離步驟之一橫截面視圖；6J illustrates a cross-sectional view of a separation step in the embodiment of FIG. 6H;

圖6K繪示本發明之另一實施例中之一俯視圖；6K is a top view of another embodiment of the present invention;

圖6L繪示圖6K之實施例之一橫截面視圖；6L illustrates a cross-sectional view of one of the embodiments of FIG. 6K;

圖6M繪示具有填料材料之圖6K及圖6L之實施例之一橫截面視圖；6M illustrates a cross-sectional view of one of the embodiments of FIGS. 6K and 6L with a filler material;

圖7A至圖7C展示開發微裝置匣之例示性流程圖；7A to 7C show exemplary flowcharts of developing a micro-device cassette;

圖8係本發明之微裝置安裝程序之一流程圖；8 is a flowchart of a micro-device installation program of the present invention;

圖9A至圖9B展示本發明之微裝置安裝程序之例示性流程圖；9A to 9B show an exemplary flowchart of a micro-device installation program according to the present invention;

圖10係本發明之微裝置安裝程序之一流程圖；10 is a flowchart of a micro-device installation program of the present invention;

圖11A至圖11B繪示具有不同類型之像素化微裝置之一施體或臨時(匣)基板之實例；11A-11B illustrate examples of donors or temporary (cassette) substrates of different types of pixelated microdevices;

圖12A至圖12B繪示具有不同類型之像素化微裝置之一施體或臨時(匣)基板之實例；FIG. 12A to FIG. 12B illustrate examples of donors or temporary (cassette) substrates of different types of pixelated microdevices;

圖13繪示相同類型之微裝置之一施體基板之一實例，但在微裝置之組之間具有一不同節距；FIG. 13 illustrates an example of a donor substrate of a microdevice of the same type, but with different pitches between groups of microdevices;

圖14A繪示具有跨微裝置之一區塊之輸出之不均勻性之一施體或臨時基板之一實例；FIG. 14A illustrates an example of a donor or temporary substrate with non-uniformity of output across a block of a microdevice; FIG.

圖14B繪示具有跨微裝置之複數個區塊之輸出之不均勻性之一受體或系統基板之一實例；FIG. 14B illustrates an example of a receiver or a system substrate having a non-uniformity of output across a plurality of blocks of a microdevice; FIG.

圖14C繪示具有微裝置之偏斜區塊之一系統基板之一實例；FIG. 14C illustrates an example of a system substrate having a skewed block of a microdevice; FIG.

圖14D繪示具有微裝置之翻轉區塊之一系統基板之一實例。FIG. 14D illustrates an example of a system substrate with a flip block of a microdevice.

圖14E繪示具有微裝置之翻轉及交替區塊之一系統基板之一實例；FIG. 14E illustrates an example of a system substrate with a flip and alternating block of a microdevice; FIG.

圖15A繪示具有微裝置之兩個不同區塊之一施體基板之一實例；15A illustrates an example of a donor substrate in one of two different blocks with a microdevice;

圖15B繪示具有不同微裝置之偏斜區塊之一系統基板之一實例；FIG. 15B illustrates an example of a system substrate with skewed blocks having different microdevices; FIG.

圖16A繪示具有像素化微裝置之三個不同類型區塊之一施體基板之一實例；16A illustrates an example of a donor substrate of one of three different types of blocks with a pixelated microdevice;

圖16B繪示具有來自各區塊之複數個不同類型個別微裝置之一系統基板之一實例；16B illustrates an example of a system substrate having a plurality of different types of individual microdevices from each block;

圖17A繪示具有像素化微裝置之複數個不同類型區塊之一匣基板之一實例；及FIG. 17A illustrates an example of a cassette substrate with a plurality of different types of blocks having a pixelated microdevice; and

圖17B繪示具有像素化微裝置之複數個不同類型偏移區塊之一匣基板之一實例。FIG. 17B illustrates an example of a cassette substrate with a plurality of different types of offset blocks with a pixelated microdevice.

圖18A至圖18E展示開發微裝置匣之例示性流程圖。18A to 18E show exemplary flowcharts of developing a microdevice cassette.

圖19展示使用一模板傳送多個匣以用微裝置填充一系統基板之一實施例。FIG. 19 shows an embodiment of using a template to transfer multiple cassettes to fill a system substrate with a microdevice.

圖20展示一模板傳送系統之一實例。FIG. 20 shows an example of a template transfer system.

本發明易受各種修改及替代形式影響，特定實施例或實施方案已在圖式中藉由實例展示且將在本文中詳細描述。然而，應理解，本發明不旨在限於所揭示之特定形式。實情係，本發明將涵蓋落入由隨附發明申請專利範圍定義之本發明之精神及範疇內之所有修改、等效物及替代例。The invention is susceptible to various modifications and alternative forms. Specific embodiments or implementations have been shown by way of example in the drawings and will be described in detail herein. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed. In fact, the present invention will cover all modifications, equivalents, and alternatives falling within the spirit and scope of the present invention as defined by the scope of the accompanying invention application patent.

Claims (18)

一種將複數個微裝置傳送至一受體基板之方法，該方法包括： 將該複數個微裝置配置於一或多個匣中； 將該一或多個匣與具有至少一個對準標記之一模板對準； 將該一或多個匣與該模板接合； 將該模板與該受體基板對準；及 將該複數個微裝置自該模板傳送至該受體基板中。A method for transferring a plurality of microdevices to a receptor substrate, the method includes: Arranging the plurality of micro-devices in one or more cassettes; Aligning the one or more cassettes with a template having at least one alignment mark; Attaching the one or more cassettes to the template; Aligning the template with the acceptor substrate; and The plurality of microdevices are transferred from the template to the acceptor substrate. 如請求項1之方法，其中將該模板與受體基板對準包括拉伸該模板。The method of claim 1, wherein aligning the template with the acceptor substrate includes stretching the template. 如請求項1之方法，其中藉由以下之一者接合該一或多個匣與該模板：一熱接合、一光學接合、一真空接合、凡得瓦力或一機械夾具。The method of claim 1, wherein the one or more cassettes and the template are joined by one of: a thermal joint, an optical joint, a vacuum joint, Van der Waals, or a mechanical fixture. 一種傳送設置，其包括： 一模板，其固持使用微裝置充填之至少一個匣；及 該模板上之一接合設備，其輔助藉由一傳送力之該等微裝置自該至少一個匣至一受體基板之一傳送。A delivery setting including: A template holding at least one cassette filled with a microdevice; and A bonding device on the template assists the transfer of the microdevices by a transfer force from the at least one cassette to one of a receiver substrate. 如請求項4之傳送設置，其中各匣具有一單獨接合設備。As in the transfer setting of claim 4, each cassette has a separate engagement device. 如請求項4之傳送設置，其進一步包括： 一支撐結構，其將該模板固持於適當位置中。If the transmission setting of claim 4 further includes: A support structure that holds the template in place. 如請求項6之傳送設置，其中該支撐結構包括以下之一者：一吸力設備、一彈簧加載銷及由加壓氣體製成之一氣床。If the transmission arrangement of claim 6, wherein the support structure includes one of the following: a suction device, a spring-loaded pin and an air bed made of pressurized gas. 如請求項4之傳送設置，其進一步包括 一高度調整設備，其在該模板與該至少一個匣之間。If the transmission setting of item 4 is further included, A height adjustment device between the template and the at least one cassette. 如請求項4之傳送設置，其中該至少一個匣與該模板上之該接合設備之間的一區域具有不同熱及機械性質。As in the transfer setting of claim 4, wherein an area between the at least one cassette and the bonding device on the template has different thermal and mechanical properties. 如請求項4之傳送設置，其中在該匣與該模板上之該接合設備之間的不同區域上形成複數個通孔。As in the transmission setting of claim 4, a plurality of through holes are formed in different regions between the cassette and the bonding device on the template. 如請求項10之傳送設置，其中該複數個通孔之一大小針對各區域進行調整以調整該等熱及機械性質。If the transmission setting of item 10 is requested, the size of one of the plurality of through holes is adjusted for each region to adjust the thermal and mechanical properties. 一種將複數個微裝置傳送至一系統基板之方法，該方法包括： 將該複數個微裝置配置於該系統基板中之一或多個匣上； 選擇各匣中之一或多個可傳送微裝置組； 識別各可傳送微裝置組中之有缺陷微裝置之一數目；及 同時調整該等有缺陷微裝置至該系統基板中之傳送。A method for transferring a plurality of micro devices to a system substrate, the method includes: Arranging the plurality of micro-devices on one or more cassettes in the system substrate; Select one or more transmittable microdevice groups in each box; Identify one of the defective microdevices in each transmittable microdevice group; and At the same time, the transmission of the defective micro-devices to the system substrate is adjusted. 如請求項12之方法，其中調整該等有缺陷微裝置之傳送包括：在該等有缺陷微裝置之該數目之一總和超過一臨限值時修復或移除各匣中之該等有缺陷微裝置。The method of claim 12, wherein adjusting the transmission of the defective microdevices includes: repairing or removing the defective ones in each cassette when the sum of one of the number of the defective microdevices exceeds a threshold value Microdevice. 如請求項12之方法，其中調整該等有缺陷微裝置之傳送進一步包括： 選擇該一或多個匣之一子組，其中微裝置組之無法傳送組之一交集係最大值，及 使用該匣子組來傳送至該系統基板。The method of claim 12, wherein adjusting the transmission of the defective microdevices further includes: Selecting a subgroup of the one or more cassettes, wherein the maximum of the intersection of one of the non-transmittable groups of the microdevice group, and Use the box set to transfer to the system substrate. 如請求項12之方法，其中調整該等有缺陷微裝置之傳送進一步包括： 選擇一匣子組，其中有缺陷微裝置之該等數目之一總和小於一臨限值；及 使用該匣子組來填充該系統基板。The method of claim 12, wherein adjusting the transmission of the defective microdevices further includes: Select a box group where the sum of one of these numbers of defective microdevices is less than a threshold value; and Use the cassette set to fill the system substrate. 如請求項12之方法，其中調整該等有缺陷微裝置之傳送進一步包括： 選擇一匣子組，其中最佳化高於一臨限值之有缺陷微裝置之數目之該總和；及 使用該匣子組來填充該系統基板。The method of claim 12, wherein adjusting the transmission of the defective microdevices further includes: Select a box group in which the sum of the number of defective microdevices above a threshold is optimized; and Use the cassette set to fill the system substrate. 如請求項12之方法，其進一步包括： 透過該系統基板加偏壓於該等微裝置以測試該等經傳送微裝置與該受體基板之間的一連接。The method of claim 12, further comprising: The micro-devices are biased through the system substrate to test a connection between the transmitted micro-devices and the acceptor substrate. 如請求項12之方法，其進一步包括： 調整接合參數以修復經識別數目個該等有缺陷微裝置。The method of claim 12, further comprising: The bonding parameters are adjusted to repair the identified number of such defective microdevices.
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