CN109830455A - Micro element transfer equipment and micro element are integrated into system substrate - Google Patents

Micro element transfer equipment and micro element are integrated into system substrate Download PDF

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Publication number
CN109830455A
CN109830455A CN201811405946.0A CN201811405946A CN109830455A CN 109830455 A CN109830455 A CN 109830455A CN 201811405946 A CN201811405946 A CN 201811405946A CN 109830455 A CN109830455 A CN 109830455A
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China
Prior art keywords
substrate
micro element
box
layer
micro
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Granted
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CN201811405946.0A
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Chinese (zh)
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CN109830455B (en
Inventor
格拉姆雷扎·查济
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Vuereal Inc
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Vuereal Inc
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Priority to CN202310686145.0A priority Critical patent/CN116682777A/en
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Publication of CN109830455B publication Critical patent/CN109830455B/en
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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
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Abstract

This disclosure relates to which the micro element of pixelation is integrated into system substrate.

Description

Micro element transfer equipment and micro element are integrated into system substrate
Cross reference to related applications
It is described this application claims the priority for the 2nd, 986, No. 503 Canada's application submitted on November 23rd, 2017 Canada's application is hereby incorporated by reference in its entirety by reference.
Technical field
The present invention relates to micro element is integrated into system substrate.
Background technique
The purpose of the present invention is by providing a kind of system for micro element to be transferred to system substrate from donor substrate The shortcomings that with method to overcome the prior art.
Summary of the invention
Some embodiments of this specification are related to for micro element being integrated into system substrate.System substrate may include micro- hair Optical diode (LED), organic LED, sensor, solid-state devices, integrated circuit, (MEMS) MEMS and/or other electronics Component.Other embodiments be related to it is during local transfer, related with pixel array for optimize micro element use it is micro- The patterning of device and placement.Receiving substrate can be but be not limited to printed circuit board (PCB), thin film transistor backplane, integrated electricity Road substrate, or in a kind of situation of the optics micro element of such as LED, receiving substrate can be the component of display, for example, driving Dynamic circuit back panel.Micro element donor substrate and the patterning for receiving substrate can be used in combination from different transfer techniques, including But it is not limited to be picked up and place using different mechanism (for example, electrostatic transfer head, elastic transfer head), or utilizes and directly turn Shifter mechanism (such as, difunctional pad etc.).
According to one embodiment, a kind of method that multiple micro elements are transferred to and are received in substrate is provided.This method Including multiple micro elements are arranged in one or more boxes, by one or more boxes and with the mould of at least one alignment mark Template is aligned by plate alignment by one or more boxes in conjunction with template with substrate is received；And multiple micro elements are turned from template It moves to and receives in substrate.
Embodiment there is provided a kind of transfer equipments according to another.Transfer equipment includes accommodating equipped with micro element at least The template of one box；And coupling apparatus, the coupling apparatus are located in template to assist micro element from least one by metastatic capacity A box, which is transferred to, to be received in substrate.
Embodiment there is provided a kind of methods that multiple micro elements are transferred in system substrate according to another.This method Including multiple micro elements on one or more boxes are arranged in system substrate；Select one or more that can turn in each box The micro element group of shifting；Identify the number of the defective micro element in each transferable micro element group；And adjustment has simultaneously Transfer of the micro element of defect into system substrate.
Detailed description of the invention
Reference is represented the attached drawing of the preferred embodiment of the present invention, and the present invention will be described in more detail, in the accompanying drawings:
Figure 1A shows the cross-sectional view of the lateral functional structure in the donor substrate of embodiment according to the present invention；
Figure 1B shows the cross-sectional view of the transverse structure of Figure 1A, and wherein current distribution layer is deposited on the transverse structure；
Fig. 1 C shows the transverse structure of Figure 1B after pattern dielectric layer, top conductive layer and depositing second dielectric layer Cross-sectional view；
Fig. 1 D shows the cross-sectional view of the transverse structure after the second dielectric layer of patterning；
Fig. 1 E shows the cross-sectional view of the transverse structure after pad is deposited and patterned；
Fig. 1 F, which is shown, is bound to system substrate by bond area to form the transverse structure after integrated morphology Cross-sectional view；
Fig. 1 G shows the cross-sectional view for removing the integrated morphology after donor substrate and patterned bottom electrode；
Fig. 2A shows the cross-sectional view of another embodiment of the lateral functional structure in the donor substrate with pad layer；
Fig. 2 B shows cuing open for the transverse structure of Fig. 2A after patterning pad layer and contact layer and current distribution layer View；
Fig. 2 C shows the cross-sectional view of the transverse structure of Fig. 2A after the distance between pad of filling pattern；
Fig. 2 D shows the section view that the transverse structure of Fig. 2A of system substrate is directed at and be bound to by patterned pad Figure；
Fig. 2 E shows the cross-sectional view of the transverse structure of Fig. 2A of removal device substrate；
Fig. 3 A shows the cross-sectional view of the mesa structure on device (alms giver) substrate；
Fig. 3 B shows the cross-sectional view of the step of empty space between the mesa structure of blank map 3A；
Fig. 3 C shows the cross-sectional view for the step of device (mesa structure) of Fig. 3 B is transferred to temporary substrates；
Fig. 3 D shows the cross-sectional view for the step of being directed at and be bound to system substrate the device of Fig. 3 C；
Fig. 3 E shows the cross-sectional view for the step of device is transferred to system substrate；
Fig. 3 F shows the heat distribution of heat transfer step.
Fig. 4 A shows the cross-sectional view for having reeded temporary substrates and the device for being transferred to it；
Fig. 4 B shows the interim lining of Fig. 4 A after the filler of filler and groove between cleaning device space The cross-sectional view at bottom；
Fig. 4 C shows the cross-sectional view by destroying the step of device is transferred to system substrate by release surface；
Fig. 5 A shows the cross-sectional view of the embodiment of the micro element in filled layer with different anchor portions；
Fig. 5 B shows the exemplary cross-sectional view of the micro element after post-processing to filled layer；
Fig. 5 C shows the top view of the micro element of Fig. 5 B；
Fig. 5 D shows the cross-sectional view of the transfer step for micro element to be transferred to another substrate；And
Fig. 5 E shows the cross-sectional view that micro element is transferred to substrate.
Fig. 6 A shows the cross-sectional view of the mesa structure on device (alms giver) substrate according to another embodiment；
Fig. 6 B shows the cross-sectional view of the step of empty space between the mesa structure of blank map 3A；
Fig. 6 C shows the cross-sectional view for the step of device (mesa structure) of Fig. 6 B is transferred to temporary substrates；
Fig. 6 D shows the cross-sectional view of the step of part for removing the bottom conductive layer of Fig. 6 C；
Fig. 6 E shows the cross-sectional view of the embodiment of the micro element in filled layer with anchor portion；
Fig. 6 F shows the cross-sectional view of the embodiment of the micro element in filled layer with anchor portion；
Fig. 6 G shows the cross-sectional view of the embodiment of the micro element in filled layer with anchor portion；
Fig. 6 H shows the cross-sectional view of the preparation process in another embodiment of the present invention；
Fig. 6 I shows the cross-sectional view of the etching step in the embodiment of Fig. 6 H；
Fig. 6 J shows the cross-sectional view of the separating step in the embodiment of Fig. 6 H；
Fig. 6 K shows the top view of another embodiment of the present invention；
Fig. 6 L shows the cross-sectional view of the embodiment of Fig. 6 K；
Fig. 6 M shows the cross-sectional view of the embodiment of Fig. 6 K and Fig. 6 L with packing material；
Fig. 7 A to Fig. 7 C shows the example flow diagram to form micro element box；
Fig. 8 is the flow chart of micro element installation process of the invention；
Fig. 9 A to Fig. 9 B shows the exemplary process diagram of micro element installation process of the invention；
Figure 10 is the flow chart of micro element installation process of the invention；
Figure 11 A to Figure 11 B shows showing for alms giver with different types of pixelation micro element or interim (box) substrate Example；
Figure 12 A to Figure 12 B shows showing for alms giver with different types of pixelation micro element or interim (box) substrate Example；
Figure 13 shows the example of the donor substrate of the micro element of same type, but the spacing between micro element group is not Together；
Figure 14 A shows the example on micro element block with the donor substrate or temporary substrates that unevenly export；
Figure 14 B is shown has the example for receiving substrate or system substrate unevenly exported on multiple micro element blocks；
Figure 14 C shows the example of the system substrate of the micro element block with oblique；
Figure 14 D shows the example of the system substrate of the micro element block with overturning；
Figure 14 E shows the example of the system substrate with overturning and alternate micro element block；
Figure 15 A shows tool, and there are two the examples of the donor substrate of different micro element blocks；
Figure 15 B shows the example of the system substrate of the different micro element blocks with oblique；
Figure 16 A shows tool, and there are three the examples of the donor substrate of different type pixelation micro element block；
Figure 16 B shows the example of the system substrate of the single micro element with multiple and different types from each piece；
Figure 17 A shows the example of the box substrate with multiple and different classes of pixels micro element blocks；And
Figure 17 B shows the example of the box substrate of the offset blocks with multiple and different classes of pixels micro elements.
Figure 18 A to Figure 18 E shows the example flow diagram to form micro element box.
Figure 19, which is shown using template, shifts multiple boxes with the embodiment of micro element fill system substrate.
Figure 20 shows the example of template transfer system.
The disclosure can be changed and can realize such as to have passed through showing in attached drawing by various modifications and alternative forms The specific embodiment or implementation that exemplifies and will be described in detail herein.It is to be understood, however, that the disclosure is not It is intended to be limited to particular forms disclosed.On the contrary, the disclosure will cover fall into be defined by the following claims it is of the invention All modifications, equivalent and substitution in spirit and scope.
Specific embodiment
Although describing this introduction in conjunction with numerous embodiments and example, it is not intended that this introduction is limited to these realities Apply mode.On the contrary, as will will be understood by those skilled in the art, this introduction cover various substitutions with it is equivalent.
Figure 1A shows the embodiment including having the donor substrate 110 of lateral functional structure, the transverse direction functional structure Flat sheets of conductive layer 112, functional layer 114 (for example, luminescent quantum trap) and top pixel conductive layer including bottom 116.Conductive layer 112 and 116 may include the conductive layer of doped semiconductor material or other suitable types.Top conductive layer 116 may include multiple and different layers.In one embodiment, as shown in fig. 1b, current distribution layer 118 is deposited on conduction On the top of layer 116.Current distribution layer 118 can be patterned.In one embodiment, pattern can be completed by removing Change.In another situation, it can complete to pattern by photoetching.In embodiments, dielectric layer can be deposited and patterned first, so It is used as the hard exposure mask for patterned current distribution layer 118 afterwards.After patterned current distribution layer 118, top conductive Layer 116 can also be patterned, to form dot structure.As is shown in fig. 1C, it in patterned current distribution layer 118 and/or leads After electric layer 116, can above patterned conductive layer 116 and current distribution layer 118 and patterned conductive layer 116 and electricity Final dielectric layer 120 is deposited between flow point layer of cloth 118.Dielectric layer 120 can also be patterned to generate as shown in Figure 1 D Opening 130, lead to the access of patterned current distribution layer 118 to provide.As shown in fig. 1E, also settable additional Levelling blanket 128 so that upper surface is smooth.
As shown in fig. 1E, pad 132 is deposited on the top of the current distribution layer 118 in each opening 130.Such as figure Shown in 1F, the formation structure with pad 132 is bound to the system substrate 150 with pad 154.In system substrate 150 Pad 154 can be separated by dielectric layer 156.Such as circuit, planarization layer, conductive trace other layers 152 can be located at system serve as a contrast Between back welding disk 154 and system substrate 150.The combination of substrate system pad 154 and pad 132 can by fusion, anodization, Hot compression, congruent melting or adhesive bond are completed.Other one or more layers can also be deposited between system and transversal device.
As shown in figure iG, donor substrate 110 can be removed from lateral function element (for example, conductive layer 112).Conductive layer 112 can be thinning and/or partially or completely pattern.Reflecting layer or black matrix" 170 can be deposited and patterned with cover pixel it Between conductive layer 112 on region.After this period, other layers can be deposited and patterned according to the function of device.For example, can sink Color conversion layer is accumulated to adjust the color of the light generated by the pixel in transversal device and system substrate 150.It can also turn in color Change before layer or/and deposit after color conversion layer one or more colour filters.Dielectric layer in these devices is (for example, dielectric 120) layer can be organic (such as, polyamide) or inorganic (such as, SiN, SiO2、Al2O3Deng).Different technique can be passed through Deposition is completed, it is such as complete by plasma enhanced CVD (PECVD), atomic layer deposition (ALD) and other methods At deposition.The combination of different materials object that each layer can be deposited or be deposited together for a kind of deposition materials or separately.In conjunction with Material can only be deposited as the pad 132 of donor substrate 110 or a part of system substrate pad 154.It, can be with for some layers There are some annealing process.For example, can be annealed according to material to current distribution layer 118.In one example, current distribution Layer 118 can anneal 10 minutes at 500 DEG C.Annealing can be also completed after different steps.
Fig. 2A shows the illustrative embodiments of the donor substrate 210 with lateral functional structure, the transverse direction function knot Structure includes the first top flat or sheets of conductive layer 212, the 214, second bottom pixel conductive layer of functional layer (for example, luminescent layer) 216, current distribution layer 218 and/or bonding pad layer 232.Fig. 2 B is shown in the layer 216,218,232 to form dot structure Whole or one patterning.Conductive layer 212 and 216 can be by including that multiple layers of highly doped semiconductor's layer form.In Fig. 2 C It is shown, some layers 228 (for example, dielectric layer) can be used between patterned layer 216,218 and 232 so that lateral functional structure Upper surface it is smooth.Other function, such as black matrix" can also be performed in layer 228.As illustrated in fig. 2d, with pad 232 It forms structure and is bound to the system substrate 250 with substrate bonding pads 254.Pad 254 in system substrate can also pass through dielectric layer 256 separation.Such as circuit, planarization layer, conductive trace other layers 252 can be located at system substrate pad 254 and system substrate Between 250.It for example can complete to combine by fusion, anodization, hot compression, congruent melting or adhesive bond.Deposition also may be present Other layers between system and transversal device.
Donor substrate 210 can be removed from lateral function element.Conductive layer 212 can thinning and/or patterning.It can deposit and scheme Case reflecting layer or black matrix" 270 are to cover the region on the conductive layer 212 between pixel.It after this period, can be according to device Other layers are deposited and patterned in the function of part.For example, can deposited colors conversion layer to adjust by transversal device and system substrate 250 In pixel generate light color.One or more can be also deposited before color conversion layer or/and after color conversion layer Colour filter.Dielectric layer (for example, dielectric layer 228 and 256) in these devices can be organically (such as, polyamide) or inorganic (such as, SiN, SiO2、Al2O3Deng).It can complete to deposit by different technique, such as pass through plasma enhanced chemical gas Mutually deposit (PECVD), atomic layer deposition (ALD) and other methods complete deposition.Each layer can be a kind of deposition materials or divide The combination of different materials object opening deposition or being deposited together.The material of bonding pad 232 can be deposited as the weldering of donor substrate 210 A part of disk 232 or system substrate pad 254.For some layers, there may also be some annealing process.For example, can basis Material anneals to current distribution layer 218.In this example, current distribution layer 218 can anneal 10 minutes at 500 DEG C.May be used also Annealing is completed after different steps.
In another embodiment shown in fig. 3a, mesa structure is formed in donor substrate 310.Micro element structure is Shape and being etched through different layers (for example, the first bottom conductive layer 312, functional layer 314 and second top conductive layer 316) At.It can be before or after etching in the deposited on top top contact 332 of top conductive layer 316.In another situation, Multilayer contact portion 332 can be used.In this case, it is possible to a part of depositing contact layers 332 before etching, and losing The other parts of depositing contact layers 332 after quarter.Ohm is generated by annealing and top conductive layer 316 for example, can deposit first The initial contact layer of contact.In one example, initial contact layer can be gold and nickel.Also other can be used between mesa structure 372 (such as, dielectric layer or MIS (metal insulator structure)) of layer are to be isolated each structure and/or make each structural insulation.Such as Shown in Fig. 3 B, after forming micro element, filled layer 374, such as polyamide can be deposited.If the only institute during next step The micro element of selection is transferred to box (interim) substrate 376, then filled layer 374 can also be patterned.It can be also transferred in device Filled layer 374 is deposited after temporary substrates.Filled layer 374 may act as the shell of micro element.Filled layer is used before transfer 374, it may make that stripping process is more reliable.
Device is bound to temporary substrates (box) 376.It is alterable in conjunction with source, and can be for example including electrostatical binding, electromagnetism knot Conjunction, adhesive bond or one of Van der Waals for (Van-Der-Waals force) combination or thermal or a variety of. In the case where thermal, the substrate binder course 378 of the fusion temperature with T1 can be used.Binder course 378 can be conductive or It including conductive layer and can be the binder course of adhesive bond, thermal or light secondary combined.Conductive layer can be used for biasing on substrate 376 Device to identify defect and characterize performance.This structure can be used for other embodiments presented herein.In order to adapt to some tables Facial contour inhomogeneities can apply pressure in cohesive process.One of temporary substrates 376 or donor substrate 310 can be removed, and Device is stayed in any of which.Herein, this process be based on by device stay in temporary substrates 376 into Row explanation, however, similar step can be used when device is left in donor substrate 310.After this stage, may be used Additional processing is made to micro element, such as make device it is thinning, on bottom conductive layer 312 formed contact engaging portion 380 and Remove filled layer 374.As depicted in figs. 3 d and 3e, device can be transferred to system substrate 390.It can be used different technologies complete At transfer.In oneainstance, it is shifted using thermal.In the case, the contact on system substrate contact pad 382 Binder course 380 has the fusing point of T2, wherein T2 > T1.Herein, the temperature than T2 high by melted substrate binder course 378 and is welded Both contact binder courses 380 on disk 382.
In a subsequent step, temperature is reduced between T1 and T2.At this moment, it since contact binder course 380 solidifies, and serves as a contrast Bottom binder course 378 still melts, therefore device is bound to system substrate 390 by contacting binder course 380.As indicated in figure 3e, Therefore mobile temporary substrates 376 will be such that micro element stays in system substrate 390.This can be by applying part to selected pad 382 Heating is to select.In addition, can be used global temperature (for example, by the way that substrate 376 and 390 to be placed on other than local heating The process is carried out wherein in baking oven and by increasing integrated environment temperature therein) Lai Tigao transfer velocity.Herein, face When substrate 376 or system substrate 390 on global temperature can make temperature close to the fusing point of contact binder course 380 (for example, close to extremely Difference 5 DEG C to 10 DEG C), and can be used local temperature come melt contact binder course 380 corresponding with selected device and Substrate binder course 378.In another situation, temperature can increase the fusing point close to substrate binder course 378, such as close to difference 5 DEG C to 10 DEG C (higher than the fusing point of contact binder course 378), and for the device that the pad 382 with heating contacts, via device The selected areas of the temperature melting substrate binder course 378 shifted from pad 382.
The example of heat distribution is shown in Fig. 3 F, wherein fusion temperature Tr fusing contact binder course 380 and substrate binder course Both 378, and solidification temperature Ts makes contact binder course 380 be solidified togather with bonding pad 382, and substrate binder course 378 Still it melts.Fusing can for part or make binder course sufficiently flexible at least to discharge micro element or activation and form the mistake of alloy Journey.Herein, device can also be maintained on bonding pad 382 using combination or other independent power.In another situation In, Temperature Distribution can be generated by being applied across the electric current of device.Since contact resistance before bonding will be higher, The power consumed on bonding pad 382 and device will be very high, to melt both contact binder course 380 and substrate binder course 378. It is formed with combining, resistance will decline, and therefore power consumption will decline, to reduce local temperature.By pad 382 voltage or Electric current can be used as bond quality and when stop the instruction of the process.Donor substrate 310 and temporary substrates 376 can be identical Or it is different.After device is transferred to system substrate 390, achievable different processing step.These additional processing steps It can be for planarization, electrode deposition, color conversion is deposited and patterned, colour filter is deposited and patterned.
In another embodiment, with alloy is initially formed, the temperature for discharging micro element from box substrate 376 increases. In the case, when being formed in the landing pad 382 for receiving substrate 390 in conjunction with alloy, temperature can be kept constant, and be tied Layer solidification is closed, so that micro element to be maintained to the appropriate location received on substrate 390.Meanwhile it being connected on box substrate 376 selected The binder course 378 for the micro element selected melts (or sufficiently flexible) still with dispensing device.Herein, material needed for forming alloy A part can be located on micro element, and the other parts of material are deposited on bonding pad 382.
In another embodiment, filled layer 374, which can be deposited on, forms combined filled layer on the top of box substrate 376 374/ binder course 378.Then, the micro element from donor substrate 310 can be pushed into polymerization filling layer 374.Then, micro- device Part can locally or globally be separated with donor substrate 310.Polymerization binder course 378/378 can divide in device and donor substrate 310 Solidify from before or after.It can be a type of micro element if multiple and different devices is integrated into box substrate 374 Special patterned polymerization binder course 37/378 is generated, micro element is buried in this layer and makes the micro element and its alms giver 310 separation.Then, another polymerization binder course 378 is deposited and patterned for the micro element of next type.Then, second micro- device Part can be embedded in relevant layer 374.In all cases, polymerization binder course 374 can cover micro element a part or entire device Part.
The another method for increasing temperature can be to use microwave or light.Therefore, layer can be deposited on bonding pad 382, pad 382 A part, (or being deposited on the absorption microwave or light and the part of local heating micro element of box substrate 376) on micro element. Alternatively, box substrate 376 and/or reception substrate 390 may include the heating element of alternative and/or global heating micro element.
Also other methods can be used to separate micro element with temporary substrates 376, such as chemistry, optics or mechanical force.One In a example, micro element can be covered by sacrificial layer, sacrificial layer can by chemistry, light, thermally or mechanically power from temporary substrates 376 shell From.This stripping process can be selectivity or global.In the case where overall situation removing, the transfer to system substrate 390 is choosing Selecting property.If the stripping process of device and temporary substrates (box) 376 be it is local, can locally or globally be applied to and be The metastatic capacity of system substrate 390.
It can carry out being transferred to the process for receiving substrate 390 from box 376 based on different mechanism.In oneainstance, box 376 With bond material, the bond material in the presence of light dispensing device and the identical photocuring device to receiving substrate Combination.
In another embodiment, the temperature for the binder course 380 of device to be cured to reception substrate 390 makes device It is discharged from box 376.
In another situation, the binder course 380 of device is cured to donor substrate 310 by current or voltage.Identical electric current Or voltage can discharge device from box 376.Herein, release can be the function by the electric current piezoelectricity generated or temperature.
In another method, after the engaging portion of curing and reception substrate 390, combining device drawer element 376.Herein, it keeps the power to box 376 to be less than device and device is bound to the power for receiving substrate 390.
In another method, box 376 has through-hole, which can be used for from box 376 releasing device to reception substrate In 390.It can complete to push by different modes, such as be pushed using microbot array or pneumatically pushed.In pneumatic structure In the case where, selected device can be pushed to the pulling force for receiving substrate 390 or disconnecting selected device by aerodynamic force. In the case where micro- stick, by making micro- stick pass through through-hole relevant to selected device, make selected device towards reception Substrate 390 is mobile.Micro- stick can have different temperature to promote to shift.After the transfer for completing selected device, micro- stick is returned Contracting.The through-hole alignment of identical stick and another group of micro element, or the micro- stick group being aligned with the micro element group newly selected are used for Shift new device.
In one embodiment, box 376 can be stretched to increase the device spacing in box 376, to increase handling capacity.Example Such as, if the area of compartmentalized box for holding assorted fruits and candies 376 is 1x1cm2, and there are 5 micron devices spacing, and receive substrate 390 (for example, display) tool There is 50 microns of pel spacing, then box 376 can once fill 200x200 (40,000) a pixel.However, as compartmentalized box for holding assorted fruits and candies 376 is drawn It extends to 2x2cm2Area, and with 10 microns of device spacing, then box 376 can once fill 400x400 (160, 000) a pixel.In another situation, box 376 can be stretched, so that at least two devices on box 376 and reception substrate Two corresponding position alignments.It can complete to stretch in one or more directions.Box substrate 376 may include Stretchable polymeric or It is made of Stretchable polymeric.Micro element is also fixed in another layer or is fixed in layer identical with box substrate 376.
The combination of the above method can be used for micro element from box 376 to the transfer process for receiving substrate 390.
During the formation of box (temporary substrates) 376, device can be tested to identify different defect and device performance.One In a embodiment, before separation top electrode, it can bias and test device.In the case where device is emission type, can make Defect and device performance are extracted with camera (or sensor).In the case where device is sensor, device can be applied and be motivated To extract defect and performance.In another embodiment, top electrodes 332 can be patterned in groups to be patterned to independent device It is tested before part.In another example, between more than one device interim public electrode deposition or be attached to device with Extraction device performance and/or extraction defect.
It is described above it is related with Fig. 3 A to Fig. 3 D, include but is not limited to separate, the formation of filled layer, filled layer not The method of same-action, test and other structures can be used for include embodiments described hereinafter other structures.
What is be discussed herein can apply for micro element to be transferred to the method for receiving substrate 390 from box 376 (temporary substrates) In all configurations of box presented herein and reception substrate.
Device in donor substrate 310 is formed as having on the same side in direction for being directed away from donor substrate 310 Two contact portions 332 and 380.In the present embodiment, the conductive layer on box 376 can be patterned to independently bias device Two contact portions 332 and 380.In oneainstance, device can be directly transferred to receive substrate 390 from box substrate 376.At this In, contact portion 332 and 380 can not be bonded directly to receive substrate 390, that is, receive substrate 390 and do not need have specific weldering Disk.In the case, conductive layer is deposited and patterned appropriate in reception substrate 390 contact portion 332 and 380 to be connected to Interconnecting piece.In another embodiment, device can be transferred to temporarily from box 376 first before being transferred to reception substrate 390 Substrate.Herein, contact portion 332 and 380 can be bonded directly to receive substrate bonding pads 382.It can be in box 376 or in temporary substrates Middle test device.
In another embodiment shown in Figure 4 A, as described above, desk-top knot is formed in donor substrate Structure, wherein micro element structure is formed and being etched through different layers, all for example the first bottom conductive layer of different layers 412, functional layer (for example, luminescent layer) 414 and the second top conductive layer 416.Top contact 432 can be before or after etching It is deposited on the top of top conductive layer 416.
Temporary substrates 476 include being initially filled with packing material (for example, the flexible material of such as polymer or such as SiO2, SiN etc. solid material) multiple groove 476-2.Groove 476-2 be located at surface and/or substrate binder course 478 it Under.Device is transferred to the temporary substrates 476 on the top of groove 476-2, and device includes contact pad 432.In addition, every A micro element may include for other passivation layers and/or MIS layer 472 being isolated and/or protect, around each micro element.Device Space between part can be filled with packing material 474.After post-processing to device, another lower contact pad 480 can sink Product is on the apparent surface of device.Under deposition before contact pad 480, contact layer 412 can be thinning.Then, filling can be removed Material 474, and groove for example can be emptied by various suitable methods (such as chemical erosion or evaporation) so that or promoting The release of the surface of binder course 478 and/or selected section.It can be used as previously in similar technique as described above by device It is transferred to system (reception) substrate 490.In addition, in another embodiment, the power applied from pad 432 is (for example, thrust or drawing Power) surface and/or binder course 478 above the groove 476-2 of emptying can be made to be broken, while keeping non-selected mesa structure attached It is connected to temporary substrates.As shown in Fig. 4 B and Fig. 4 C, which can also be such that device discharges from temporary substrates 476.Groove 476-2's Depth may be selected to be some micro element differences in height of reply.For example, the depth of groove can be greater than H if difference in height is H.
Device on substrate 310 can be formed on the same side in direction for being directed away from substrate 310 there are two tools Contact portion 432 and 480.In the case, the conductive layer on box substrate 476 can be patterned to the two of independently bias device A contact portion.In oneainstance, device can be directly transferred to receive substrate from box substrate 476.Herein, 432 He of contact portion 480 will not be bonded directly to receive substrate (receive substrate and do not need have specific pad).In the case, conductive layer quilt It is deposited and patterned so that contact portion 432 and 380 is connected to the interconnecting piece appropriate received in substrate.In another situation, device Part can be transferred to temporary substrates from box 476 first before being transferred to reception substrate.Herein, contact portion 432 and 480 can be straight Binding is bonded to reception substrate bonding pads.Device can be tested in box or in temporary substrates.
In another embodiment shown in fig. 5, as described above, it is formed in donor substrate 510 desk-top Structure, wherein micro element structure is formed and being etched through different layers, all for example the first bottom conductive of different layers Layer 512, functional layer (for example, luminescent layer) 514 and the second top conductive layer 516.Top contact pad 532 can before etching or It is deposited on the top of top conductive layer 516 later.In addition, each micro element may include for it is being isolated and/or protect, surround Other passivation layers and/or MIS layer 572 of each micro element.In the present embodiment, device may be provided with different anchor portions, by After removing device, anchor portion keeps device to donor substrate 510 for this.It can complete to remove by laser.In this example, laser Only scanning device.In embodiments, covering with the opening for being only used for device can be used at the back side of donor substrate 510 Mould, to stop the laser from other regions.Mask can be individually or can be a part of donor substrate 510.? In another situation, another substrate can be connected to device before stripping process with retainer member.It, can be in device in another situation Filled layer 574 (for example, dielectric layer) is used between part.
In the first situation shown, layer 592 is arranged to keep device to donor substrate 510.Layer 592 can be individual A part that layer is not etched during the formation of mesa structure of layer or micro element.In another situation, layer 592 can be layer One continuity in 572.In the case, layer 592 can be metal layer or dielectric layer (SiN or SiO2Or other materials).? In another situation, anchor portion be formed include extension 594, gap/gap 596 and/or bridge portion 598 independent structure.At this In, sacrificial layer is deposited and patterned as with shape identical with gap/air gap 596.Then, anchor layer is deposited simultaneously pattern Change to form bridge portion 598 and/or extension 594.Expendable material can be removed later to generate gap/gap 596.Also it can be omitted Extension 594.Similar with previous anchor portion 592, another anchor portion can be made of different structure sheafs.In another situation, filling Layer 574 serves as anchor portion.In the case, filled layer 574 can be etched or pattern or keep intact.
Fig. 5 B, which is shown, is removing filled layer 574 and/or etching filled layer to generate the sample after anchor portion 574.Another In one situation, after lift-off, the bonding force of bridge layer 598 is enough that device is held in position in and is served as anchor portion.Most Whole device is located on the right side of Fig. 5 B；These devices are shown on a substrate 510 merely for the purpose shown.It can be Any one in them or combination are used on substrate.As shown in Figure 5 C, anchor portion 574 can covering device at least part or Entire periphery or anchor portion 574 can be patterned to form arm 594 and 592.For any anchor portion structure, it can be used and appoint It anticipates a kind of structure.Fig. 5 D shows an example for being transferred to device and receiving substrate 590.Herein, micro element is bound to weldering Disk 582 does not utilize any pad and places in predetermined areas.Pressure or separating force can discharge anchor portion by destroying anchor portion. In another situation, temperature can be used also to discharge anchor portion.It can make the removing of micro element Yu donor substrate 510 by controlling temperature Between layer viscosity increase to serve as anchor portion.Fig. 5 E shows the device being transferred to after receiving substrate 590 and shows Possible point of release 598-2 in anchor portion.Anchor portion also may be connected directly to donor substrate 510 or is indirectly connected with by other layers To donor substrate 510.
Device in donor substrate 510 can be formed to have on the same side in direction for being directed away from donor substrate 510 There are two contact portions 532 and 480.In oneainstance, device can be directly transferred to receive substrate 590 from donor substrate 510.? Here, contact portion 532 and 480 can be bonded directly to receive substrate bonding pads 582.It can be tested in alms giver 510 or in box substrate Device.In another embodiment, device can be transferred to box lining from alms giver's box 510 first before being transferred to reception substrate 590 Bottom.Herein, contact portion 532 will not be bonded directly to receive substrate 590, that is, receive substrate 590 and do not need have specific weldering Disk 582.In the case, conductive layer is deposited and patterned appropriate in reception substrate 590 contact portion 532 to be connected to Interconnecting piece.
System substrate or receive substrate 390,490 and 590 may include micro- light emitting diode (LED), organic LED, sensor, Solid-state devices, integrated circuit, (MEMS) MEMS and/or other electronic building bricks.Other embodiments are related to and pixel battle array It arranges the patterning of related micro element and places and used with the micro element in optimum choice transfer process.System substrate or reception Substrate 390,490 and 590 can be but be not limited to printed circuit board (PCB), thin film transistor backplane, IC substrate, or It can be the component of display, for example, driving circuit backboard in a kind of situation of the optics micro element of such as LED.Micro element is applied Main substrate and the patterning for receiving substrate can be used in combination from different transfer techniques, including but not limited to utilize different machines System (for example, electrostatic transfer head, elastic transfer head) is picked up and places, or utilizes (such as, the difunctional weldering of direct metastasis Disk etc.).
Fig. 6 A shows the alternate embodiments of the mesa structure of Fig. 3 A to Fig. 3 F, wherein when initial, mesa structure does not have It is etched through all layers.Herein, some parts of buffer layer 312 and/or contact layer 312 can retain during initial step. Mesa structure is formed in donor substrate 310.Micro element structure is by being etched through different layers (for example, the first bottom is led Electric layer 312, functional layer 314 and the second top conductive layer 316) and formed.Top contact 332 can before etching or it It is deposited on the top of top conductive layer 316 afterwards.Mesa structure may include other layers 372, other layers 372 will be desk-top in formation It is deposited and patterned before structure or after forming mesa structure.These layers can be dielectric, MIS layers, contact portion, sacrificial layer Deng.After mesa structure formation, filled layer (multiple filled layers) 374 (such as dielectric material) is used between micro element or micro- Micro element to be fixed together around device.Micro element is bound to by substrate binder course (multiple substrate binder courses) 378 to be faced When substrate 376.Binder course (multiple binder courses) 378 can provide one or more different power, such as electrostatic force, chemical force, object Manage power, heat etc..As described above, in device after the removal of donor substrate 310, the appendix of bottom conductive layer 312 Dividing can be etched or pattern with discrete device (Fig. 6 C).Other layers for such as contacting binder course 380 can be deposited simultaneously pattern Change.Herein, filled layer 374 can be etched to separate micro element or remove sacrificial layer with discrete device.In another embodiment In, temperature can be applied so that device separates with filled layer 374 and device is made to be ready to be transferred to reception substrate 390.Such as institute above Description, optionally complete separation.As is shown in figure 6e, in another embodiment, filled layer 374 can be etched away to It is formed at least partially surrounding the shell of each micro element, substrate or anchor portion 375 (for example, with frustoconical shape or truncated cone Shape).Another layer can be deposited on substrate 375 and for manufacturing anchor portion 598-2.After forming additional layer 598-2, Filling basal layer 375 can be left or be arranged from anchor portion and remove.Fig. 6 G shows the device with sacrificial layer 372-2.Sacrificial layer 372-2 can be removed by etching or can be removed by thermal deformation or heat.
In another embodiment, anchor portion it is identical as shell 375 and after micro element is transferred to box 376 by polymerizeing Object, organic matter or other layers are constituted.Shell 375 can have different shapes.In oneainstance, shell can be with device shape Match.Side wall of outer shell is short than micro element height.Side wall of outer shell can be connected to micro element before migration period to be come in box 376 The different post-processing of micro element and the encapsulation of micro element box provide bearing, for transporting and storing.Side wall of outer shell can be Separation, or different mode (such as, heat, etching or exposure can be passed through before migration period or during migration period Light) weaken and the connection of micro element from device.
Device in donor substrate 310 can be formed to have on the same side in direction for being directed away from donor substrate 310 There are two contact portions 332 and 380.In in the case, the conductive layer on box 376 can be patterned to independently bias device Two contact portions 332 and 380.In oneainstance, device can be directly transferred to receive substrate 390 from box substrate 376.At this In, contact portion 332 and 380 will not be bonded directly to receive substrate 390, that is, receive substrate 390 and do not need have specific weldering Disk.In the case, conductive layer is deposited and patterned appropriate in reception substrate 390 contact portion 332 and 380 to be connected to Interconnecting piece.In another embodiment, device can be transferred to temporarily from box 376 first before being transferred to reception substrate 390 Substrate.Therefore, contact portion 332 and 380 can be bonded directly to receive substrate bonding pads.It can be in box 376 or in temporary substrates Test device.
Due to the mismatch between substrate lattice and micro element layer, the growth of layer includes several defects, such as dislocation, sky Gap etc..In order to reduce defect, at least one first buffer layer 6114 and/or second slow can be deposited in donor substrate 6110 first Rush layer 6118, wherein separating layer 6116 is between first buffer layer 6114 and second buffer layer 6118 or and first buffer layer 6114 and second buffer layer 6118 it is adjacent, and then deposit active layer on buffer layer 6114 and/or buffer layer 6118 6112.The thickness of buffer layer 6114 and 6118 can be to be biggish, for example, thickness of donor substrate 6110.In micro element and alms giver During the separation (removing) of substrate 6110, buffer layer 6114/6118 can also be separated.Therefore, it is heavy that buffer layer should be repeated every time Product.Fig. 6 H shows the structure on substrate 6110, wherein separating layer 6116 is located at first buffer layer 6114 and practical devices layer Between 6112.Second buffer layer 6118 may be present between separating layer 6116 and device layer 6112.Second buffer layer 6118 may be used also Stop the contaminant infiltration from separating layer 6116 to device layer 6112.Two buffer layers 6114 and 6118 may include more than one A layer.Separating layer 6116 may also comprise the stacking of different materials.In one example, separating layer 6116 is not responding to other layers The wavelength of light react.This light source can be used for by practical devices 6112 and buffer layer (multiple buffer layers) 6114/6118 with And donor substrate 6110 separates.In another example, separating layer 6116 and chemical reaction, and the identical chemical substance is not Influence other layers.This chemical substance can be used for removing separating layer 6116 or change the property of separating layer 6116 with by device It is separated with buffer layer (multiple buffer layers) 6114/6118 and substrate 6110.This method makes first in donor substrate 6110 to delay It is complete for rushing layer 6114, and first buffer layer 6114 therefore can be reused in further device is formed.In further device Before deposition, the achievable some surface treatments such as cleaned or buffered.In another example, buffer layer (multiple buffer layers) 6114/6118 may include zinc oxide.
As shown in Figure 6 I, before separation process (removing), micro element can be separated by different etching processes.The erosion Quarter can lose some or all of 6118 (if present) of second buffer layer and separating layer 6116 and device layer 6112 It carves.In another example, second buffer layer 6118 or separating layer 6116 are not etched.After an etching step, micro element is interim (or for good and all) it is bound to another substrate 6150, and separating layer 6116 is removed or altered so that micro element is (multiple with buffer layer Buffer layer) 6114/6118 separation.As shown in fig. 6j, first buffer layer 6114 can be kept substantially complete in donor substrate 6110 It is whole.
In another embodiment shown in Fig. 6 K to Fig. 6 M, layer is (for example, the first bottom conductive layer 312, functional layer 314 and second top conductive layer 316) island portion 6212 can be formed as in donor substrate 6210.Fig. 6 K, which is shown, is formed as micro- device The top view of the island portion 6212 of the array of part.Island portion 6212 can be the box of identical size or the box of multiple sizes.Island portion 6212 can It initially forms from buffer layer 6114/6118 or is formed after buffer layer.Herein, surface treatment or gap 6262,6263 can It is formed on the surface with the growth of the film initially as island portion (Fig. 6 L).As Fig. 6 M, in order to handle micro element, it can pass through Filled layer 6220 fills gap.Filler 6220 may include polymer, metal or dielectric layer.It is removable after handling micro element Except filled layer 6220.
Fig. 7 A highlights the process to form micro element box.During first step 702, in donor substrate (for example, alms giver serves as a contrast Bottom 310 or 510) on prepare micro element.During this step, forms device and post-processing is executed to device.In second step 704 Period, device are ready to separate with donor substrate 310 or 510.This step may include by using (such as anchor portion, anchor portion 375,476-1,592,594,598 and 598-2) or filler (for example, filler 374,472 and 574) fix micro element. During third step 706, box substrate or temporarily is formed by pretreated micro element in first step 702 and second step 704 Substrate (for example, box substrate 376 or 476).In oneainstance, during this step, micro element is by binder course (for example, knot Close layer 378 or 478) directly or indirectly it is bound to box substrate 376 or 476.Then, micro element and micro element box substrate 376 or 476 Separation.In another embodiment, box is formed in micro element donor substrate (for example, donor substrate 510).It is fixed in device After on box substrate 376,476 or 510, other processing steps can be carried out, such as remove some layers (for example, layer 312,374, 472,574), increase the related layer (for example, contact portion 380 or 480) of electricity or optical layer (lens, reflector).Box 376 or 476 It is moved to and receives substrate (for example, receiving substrate 390,490 or 590) so that device is transferred to reception substrate 390,490 or 590. It can rearrange or merge some steps in these steps.Can micro element still box substrate (for example, box substrate 376 or 476) micro element is held when on or after micro element has been transferred to and has received substrate (for example, receiving substrate 390,490 or 590) Row testing procedure 707A, to determine whether micro element is defective.In 707B, defective micro element can be removed or be fixed on It is in situ.For example, the micro element group with predetermined number can be tested, and if the number of defect is more than predetermined threshold, it is removable Except entire micro element group, at least some of defective micro element can be removed and/or can repair in defective micro element It is at least some.
Fig. 7 B highlights the process to form micro element box.During first step 702, micro element is prepared on substrate.? During this step, forms device and post-processing is executed to device.During second step 704, device is ready to separate with substrate. This step may include by using anchor portion or the fixed micro element of filler.During third step 706, by first step 702 Box is formed with micro element pretreated in second step 704.It is related with the pixel in system substrate micro- during step 707A Device group be identified with more than threshold value defect, and during step 707B, remove and the micro element group phase The micro element of pass.In oneainstance, during this step, micro element is directly or indirectly bound to box substrate by binder course. Then, micro element is separated with micro element substrate.In another situation, box is formed on micro element substrate.It is fixed in device After on box substrate, other processing steps can be carried out, such as remove some layers, the related layer (for example, contact portion) of addition electricity Or optical layer (lens, reflector).Box, which is moved into, receives substrate so that device is transferred to reception substrate.Can rearrange or Merge some steps in these steps.
Fig. 7 C highlights the process to form micro element box.During first step 702, micro element is prepared on substrate.? During this step, forms device and post-processing is executed to device.During second step 704, device is ready to separate with substrate. This step may include by using anchor portion or the fixed micro element of filler.During third step 706, by first step 702 Box is formed with micro element pretreated in second step 704.During step 707, identify defective micro- in box Device, the and if number of defect is greater than threshold value, repaired during step 707B some in defective micro element or All.In oneainstance, during this step, micro element is directly or indirectly bound to box substrate by binder course.Then, will Micro element is separated with micro element substrate.In another situation, box is formed on micro element substrate.It is fixed on box substrate in device Later, other processing steps can be carried out, some layers, the related layer (for example, contact portion) of addition electricity or optical layer are such as removed (lens, reflector).Box, which is moved into, receives substrate so that device is transferred to reception substrate.It can rearrange or merge these Some steps in step.
Fig. 8, which is shown, is transferred to the step of receiving substrate 390,490 or 590 from box 376,476 or 510 for device.At this In, during first step 802, box 376,476 or 510 is loaded (or pickup), or in another embodiment, spare Equipment arm is pre-loaded with box 376,476 or 510.During second step 804, box 376,476 or 510 and reception substrate Partially (or all) alignment.It can be by using dedicated right on box 376,476 or 510 and reception substrate 390,490 or 590 Fiducial mark note is aligned using the landing portion on micro element and reception substrate 390,490 or 590.It is micro- during third step Device is transferred to selected touchdown area.If receiving substrate 390,490 or 590 to be completely filled, box substrate 376,476 Or 510 be moved to next step (for example, another reception substrate 390,490 or 590).Current if necessary to further filling Substrate 390,490 or 590 is received, then carries out further transfer step using one or more other boxes 376,476 or 510 Suddenly.Before new transfer cycle, if compartmentalized box for holding assorted fruits and candies 376,476 or 510 does not have enough devices, then circulation is opened from first step 802 Begin.It is if compartmentalized box for holding assorted fruits and candies 376,476 or 510 has enough devices, then in step 814 that the offset of box 376,476 or 510 is (or mobile And be aligned) to receive substrate 390,490 or 590 in new region, and newly circulation continue to 806.Can merge and/ Or rearrange some steps in these steps.
Fig. 9 A, which shows for device to be transferred to from box (for example, temporary substrates 376,476 or 510), receives substrate (for example, connecing Receive substrate 390,490 or 590) the step of.Herein, during first step 902, box 376 or 476 is loaded (or pickup), Or in another embodiment, stand-by equipment arm is pre-loaded with box.During second step 902-2, in box 376,476 Or select the number of the defects of micro element group less than the micro element group of threshold value in 510.During third step 904, box 376, 476 or 510 are aligned with the part (or whole) for receiving substrate.By using box 376,476 or 510 and/or substrate can be received 390, it the special aligned label on 490 or 590 or using micro element and receives the landing portion on substrate 390,490 or 590 and carries out Alignment.Then, during third step 906, micro element can be transferred to selected touchdown area.In optional step 906-2 In, it can be for example biased by reception substrate 390,490 or 590 and micro element is connected to test micro element and receive substrate Connection.If it find that a other micro element is defective or nonfunctional, then other set-up procedure 906-3 can be performed correcting or Repair some or all of non-functional micro element.
If receiving substrate to be completely filled, receives substrate 390,490 or 590 and be moved into next step.If needed It further to fill and receive substrate 390,490 or 590, then be carried out by one or more other boxes 376,476 or 510 further Transfer step.Before new transfer cycle, if compartmentalized box for holding assorted fruits and candies 376,476 or 510 does not have enough devices, then recycle from the first step Rapid 902 start.It is if compartmentalized box for holding assorted fruits and candies 376,476 or 510 has enough devices, then in step 902-2 that box 376,476 or 510 is inclined (or move and be aligned) is moved to the new region received in substrate 390,490 or 590.
Figure 10 shows the exemplary process step to form polymorphic type micro element box 376,476,510 or 1108.First During step 1002, at least two different micro- devices are prepared in different donor substrates (for example, donor substrate 310 or 510) Part.During this step, forms device and post-processing is executed to device.During second step 1004, device is ready to and applies Main substrate (for example, donor substrate 310 or 510) separation.This step may include by using anchor portion (for example, anchor portion 375, 476-1,592,594,598 and 598-2) or the fixed micro element of filler (for example, filler 374,472 and 574).In third During step 1006, the first device is moved to box 376,476,510 or 1108.It, will at least the during four steps 1008 Two micro elements are moved to box 376,476,510 or 1108.In oneainstance, during this step, micro element passes through binder course (for example, binder course 378 or 478) is directly or indirectly bound to box substrate 376,476,510 or 1108.Then, micro element with it is micro- Device donor substrate 310 or 510 separates.In the case where directly shifting, different types of micro element can have different height Degree is to assist directly shifting.For example, the micro element for being transferred to the Second Type of box 376,476,510 or 1108 can be than first The micro element of type is slightly high (alternatively, position of the micro element of Second Type on box 376,476,510 or 1108 can be slightly It is high).Herein, after box 376,476,510 or 1108 is completely filled, adjustable micro element height so that box 376, 476,510 or 1108 surface is flat.This can be by shorter micro element added material or by from higher micro element Material is removed to complete.In another case, receive substrate 390,490 or 590 on touchdown area can have with box 376, 476, the associated different height of difference in 510 or 1108.Filling box 376,476,510 or 1108 another method be Based on what is picked up and place.It can be by picking up and micro element is moved to box 376,476,510 or 1108 by placement process.At this In, picking up and placing the power element on head can be system for the micro element in a cluster in box 376,476,510 or 1108 One or the power element each micro element can be individually.It is moved in addition, micro element can use other modes Box 376,476,510 or 1108.In another embodiment, the first micro element or the second micro element (third micro element or other Micro element) in additional device removed from box substrate 376,476,510 or 1108, and other kinds of micro element is transferred In empty region on to box 376,476,510 or 1108.It is fixed on box substrate 376,476,510 or 1108 in device Afterwards, other processing steps can be carried out, such as addition filled layer 374,474 or 574 removes some layers, the related layer of addition electricity (for example, contact portion 380,480 or 580) or optical layer (lens, reflector).Substrate 390,490 is being received for filling every time Or before 590, device can be tested.The test can be electricity or optical or both combination.The test can identify The defect and/or performance of device on box.During last step 1010, box 376,476,510 or 1108 is moved to reception Substrate 390,490 or 590 receives substrate 390,490 or 590 so that device to be transferred to.It can rearrange or merge these steps Some steps in rapid.
Transfer process (such as Fig. 7, Fig. 8, Fig. 9 and Figure 10) described herein may include stretching step with increase box 376, 476, the spacing of the micro element on 510 or 1108.This step can be completed in position prior to alignment or as a part of complete of alignment procedures At.This step can increase the number for the micro element being aligned with the touchdown area (or pad) received on substrate 390,490 or 590 Mesh.In addition, it can will be between the micro element array including at least two micro elements on box 376,476,510,1108 Away from the pitch match with the touchdown area (or pad 382) on reception substrate 390,490 or 590.
Figure 11 A to Figure 11 B shows showing for the polymorphic type micro element box 1108 similar with temporary substrates 376,376 or 510 Example.In Figure 11 A, box 1108 includes three kinds of different types of micro elements 1102,1104,1106, for example, three kinds of colors (it is red, Green and blue) micro element.But more type of device may be present.The distance between micro element x1, x2, x3, y1 with connect The spacing for receiving the touchdown area in substrate 390,490 or 590 is related.Can with receive substrate 390,490 or 590 in pixel After the relevant several devices of spacing, different spacing x4, y2 may be present.This spacing is by compensation pixel spacing and micro element spacing Mismatch between (touchdown area spacing).In the case, if using picking up and placement forms box 1108, power element can be with It is the form of column corresponding with the column of each micro element type or power element can be individual member for each micro element Part.In Figure 11 B, box 1108 includes three kinds of different types of micro elements 1102,1104,1106, for example, three kinds of colors (it is red, Green and blue) micro element.Multiple micro elements 1102,1104,1106 of each color can be arranged in box.One device slightly Part can be arranged between the micro element 1102,1104,1106 of three kinds of different colours.The distance between micro element x1, x2, x3, Y1 is related to the spacing of touchdown area received in substrate 390,490 or 590.Donor substrate or interim (box) lining can be used These difference arrangements of pixelation micro element on bottom.
Figure 12 A to Figure 12 B shows showing for the polymorphic type micro element box 1208 similar with temporary substrates 376,476 or 510 Example.In fig. 12, box 1208 includes three kinds of different types of micro elements 1202,1204,1206, for example, three kinds of colors (it is red, Green and blue) micro element.Other regions 1206-2 can for it is empty, filled with spare micro element or including different types of 4th micro element.Between touchdown area in the distance between micro element x1, x2, y1, y2 and reception substrate 390,490 or 590 Away from correlation.It can may be present not to after the relevant several device arrays of pel spacing received in substrate 390,490 or 590 Same spacing x4, y4.This spacing is by the mismatch between compensation pixel spacing and micro element spacing (touchdown area spacing).Scheming In 12B, box 1208 includes three kinds of different types of micro elements 1202,1204,1206, for example, three kinds of colors (it is red, green and Blue) micro element.Multiple micro elements 1202,1204,1206 of each color can be arranged in box.Some micro elements can be with It is arranged between the micro element 202,1204,1206 of three kinds of different colours.The distance between micro element x1, x2, y1, y2 with connect The spacing for receiving the touchdown area in substrate 390,490 or 590 is related.The picture on donor substrate or interim (box) substrate can be used These difference arrangements of elementization micro element on bottom plate to map micro element.
Figure 13, which is shown, to be served as a contrast before being transferred to polymorphic type micro element box 376,476,510,1108,1208 with alms giver One example of the micro element 1302 prepared in the similar donor substrate 1304 in bottom 310 or 510.It herein, can be individual Device or device group use supporting course 1306 and 1308.Herein, spacing can in box 376,476,510,1108,1208 Pitch match or the spacing can be box spacing several times.
In above-mentioned all structures, before using micro element filling substrate, micro element can be moved to from the first box Second box.Additional processing step can be carried out after the transfer.Alternatively, can be between the first box structure and the second box structure It is some in allocation processing step.
Figure 14 A shows the embodiment of the micro element in the donor substrate 1480 similar with donor substrate 310 or 510. Since manufacture and fault in material, micro element may have the output work for gradually decreasing or gradually increasing in donor substrate 1480 Rate, that is, the inhomogeneities of output power, as in attached drawing with as being deep to shown in shallow color.Since device can be in a block (example Such as, block 1482) in be transferred to receive in substrate 390,490 or 590 together, or one or more be every time successively transferred to reception In substrate 390,490 or 590, the adjacent devices received in substrate 390,490 or 590 are gradually deteriorated.However, it is possible to one A block (for example, block 1482) or a series of adjacent block ends are with another piece (for example, block 1483) or at a series of pieces of beginnings More serious problem occurs for (for example, along intersecting lens 1484), this may cause the prominent of the output performance as shown in Figure 14 B So variation.The suddenly change can lead to the visual artifact of photoelectric device (such as display).
In order to solve the problems, such as inhomogeneities, an embodiment shown in Figure 14 C includes making in the display individually Block 1482 and 1483 and its top and block oblique below or interlock so that the edge or intersecting lens of block are not change dramaticallies Line, to eliminate intersecting lens 1484, and thus device blocks form the pattern of oblique over the display.Therefore, it drops significantly The low average influence of unexpected transformation.Oblique can be random and can have different sections.
Figure 14 D shows the micro element in adjacent block and is reversed so that adjacent to each other another of the device with similar performance Embodiment, for example, first piece 1482 of performance is reduced from the first outside A to the first inside B, and adjacent second piece 1483 Performance increase from the second inside B to second outside A adjacent with the first inside A, this may make change and transformation between block It keeps very smooth and eliminates long unexpected intersection 1484.
Figure 14 E shows overturning device (for example, high performance device and low performance device replace inside) and oblique side The example combinations of edge are further to improve average Uniformity.In the embodiment as shown, device performance is in two directions Replace between high and low, that is, between adjacent horizontal block and adjacent vertical block alternately.
In oneainstance, before being transferred to reception substrate 390,490 or 590, the property of the micro element of the edge of block It can be matched with adjacent transfer block (array).
Figure 15 A shows using two or more blocks 1580,1582 block filled and received in substrate 1590.Showing In embodiment out, the method for oblique as shown in Figure 15 B or overturning can be used for further improving average Uniformity.Respectively Higher (or lower) output power side B and C from block 1580 and 1582 can be positioned adjacent to each other, and make the company between block The interconnecting piece of block above socket part and block and below block interlocks or oblique.In addition, random pattern or limiting pattern can be used to fill out It fills the box substrate with more than one piece or receives substrate 1590.
Figure 16 A shows the sample with more than one piece 1680,1682 and 1684.Block 1680,1682 and 1684 can come From identical donor substrate 310 or 510 or from different donor substrates 310 or 510.Figure 16 B is shown by different blocks 1680, the example of 1682 and 1684 filling boxes 1690 is to eliminate the inhomogeneities found in any one block.
Figure 17 A and Figure 17 B show the structure with multiple boxes 1790.As described above, the position of box 1790 is With eliminate during different transfer cycles receive substrate 390,490,590 or 1590 in identical region with it is having the same What the mode that the box 1790 of micro element is overlapped selected.In one example, box 1790 can be independent, it means that individual arm Or controller is independently processed from each box.In another embodiment, it can oppositely complete to be aligned, but can synchronize and carry out other Behavior.In the present embodiment, after being aligned, it is removable to promote transfer to receive substrate 390,490,590 or 1590.? In another example, after being aligned, box 1790 is moved together to promote to shift.In another example, box 1790 and reception substrate 390, both 490,590 or 1590 is removable to promote transfer.In another situation, assembling box 1790 can be shifted to an earlier date.In this situation Under, frame or substrate can keep assembled box 1790.
The distance between box 1790 X3, Y3 can be the several times of width X1, X2 of box 1790 or the several times of length Y1, Y2.It should Distance can be the function of step number mobile on different directions.For example, X3=KX1+HX2, wherein K is to receive substrate for filling 390, the mobile step number of 490,590 or 1590 (direct or indirect) to the left, and H be for fill receive substrate 390, 490, the mobile step number of 590 or 1590 (direct or indirect) to the right.Identical functional relation can be used between box 1790 away from From Y3 and length Y1 and Y2.As shown in figure 17 a, box 1790 can be aligned in one or both directions.Show in Figure 17 B In another example out, box 1790 is misaligned at least one direction.Each box 1790 can have independent control, with to connecing It receives substrate 390,490,590 or 1590 and applies pressure and temperature.According to receive substrate 390,490,590 or 1590 and box 1790 it Between moving direction, there may also be other arrangements.
In another example, box 1790 can have different devices, and therefore receive substrate with different device fillings 390, the different zones in 490,590 or 1590.In the case, box 1790 and reception substrate 390,490,590 or 1590 Relative position changes different to be filled with all required micro elements from different boxes 1790 after each transfer cycle Region.
In another embodiment, the array of several boxes 1790 is prepared.Herein, it is shifted in device from the first array of box To after receiving substrate 390,490,590 or 1590, receives substrate 390,490,590 or 1590 and be moved to the next of micro element Array is to fill the remaining area received in substrate 390,490,590 or 1590 or receive different devices.
In another example, box 1790 can be located on curved surface, and therefore arc movement is provided for micro element to be transferred to Receive the contact in substrate 390,490,590 or 1590.
Figure 18 A to Figure 18 E highlights the process to form micro element box and reduce defective micro element.In Figure 18 A, During first step 1802, micro element group is prepared on substrate.During second step 1804, can find in system substrate Pixel is relevant, micro element group that number of wherein defective micro element is greater than threshold value.During third step 1806, Before the micro element group fill system substrate of box, some or all in defective micro element can be repaired.It can be again Arrange or merge some steps in these steps.
In Figure 18 B, during first step 1802, micro element group is prepared on substrate.During second step 1804, The micro element group that relevant to the pixel in system substrate, wherein defective micro element number is greater than threshold value can be found. During third step 1806, the micro element in the micro element group can be removed.
It, can be in the searching of each box and system substrate in box group during first step 1802 in Figure 18 C Pixel is relevant, defective micro element number is greater than the not transferable micro element group of threshold value.During second step 1804, It can choose the maximum subset of intersection of the wherein untransferable micro element of box.During third step 1806, box can be used The subset carry out fill system substrate.
In Figure 18 D, during first step 1802, it can find related to the pixel in system substrate in different boxes The defects of different micro element group.During second step 1804, it can choose in different boxes and in system substrate Relevant different the defects of the micro element group of pixel.During third step 1806, the subset of box can be used to carry out fill system Substrate.
In Figure 18 E, during first step 1802, it can find relevant to pixel in system substrate in different boxes The defects of different micro element groups.During second step 1804, can choose the subset of box, in the subset, higher than threshold value, The number of micro element group relevant to pixel in system substrate is optimised in selected box.It, can during third step 1806 Carry out fill system substrate using the subset of box.
Figure 19, which is shown using template, shifts multiple boxes with the embodiment of micro element fill system substrate.At this In, template has more than one box.During first step 1902, at least one box with some alignment marks to promote The template of alignment procedures is aligned.During second step 1906, at least one box is bound to template.Binding mechanism can be difference Form, hot, optics, vacuum, Van der Waals force, mechanical grip etc..There may be the loops for repeating step 1902,1906 1904 to be bound to template for more boxes.Then, template is aligned with substrate is received.
Figure 20 shows the example of template transfer system.Herein, template 2002, which has, can be loaded in structure 2002-2 On multiple boxes 2004.The structure 2002-2 can provide bigger rigidity, and can also provide high configurability.It can be with Level configurations are independently controlled for each structure 2002-2.Structure 2002-2 can ruler identical as the size of box, less than box Size very little or greater than box.This structure 2002-2 can also be that auxiliary micro element is transferred to from box 2004 and receive in substrate 2010 Coupling apparatus.Coupling apparatus can provide pressure, temperature, optics and other kinds of power with secondary transfer.In another situation, Coupling apparatus 2006 is located at the other side of template 2002.In addition, template can be maintained at appropriate by some supporting structures 2008 Position.Supporting structure 2008 can be located at the either side of template 2002.In oneainstance, supporting structure can be with combination Device is identical.In another situation, each box has individual coupling apparatus.In another situation, an at least more than box Coupling apparatus be identical.Receiving substrate 2010 also has supporting structure 2014,2016.Supporting structure, which can be located at, receives lining At the either side at bottom.In oneainstance, the coupling apparatus 2012 that can assist or start cohesive process can be had by receiving substrate. One of coupling apparatus 2006 or 2012 can be used for combining.Supporting structure 2014 can be identical as coupling apparatus 2012 is received.? In another situation, multiple template can be used to fill reception substrate.Herein, each template can independently with receive substrate Alignment.
Supporting structure can be suction unit, magnetic force, the pin of loading spring, by compressed gas systems such as air or nitrogen At air-bed.
The region between box 2004 and coupling apparatus 2006 in template 2002 can have different thermal propertys and/or machine Tool property.In oneainstance, which can be made of the different materials with high thermal conductivity.In another situation, lead to Hole may be formed in the different zones between in template, box 2004 and device 2006 or at least one region and other In region.The size of through-hole can be adjusted for each region to adjust engineering properties.In another situation, through-hole can be filled There is different materials to adjust the engineering properties and/or thermal property of the different zones of template 2002.
Vertical photovoltaic stack layer include substrate, active layer, at least one buffer layer between active layer and substrate with And at least one separating layer between buffer layer and active layer, wherein active layer can pass through the property of change separating layer From substrate physical removal, simultaneous buffering layer is kept on substrate.
In one embodiment, change separating layer (multiple separating layers) property process include chemical reaction etching or Deform separating layer.
In another embodiment, the process for changing the property of separating layer (multiple separating layers) includes being exposed to photoelectricity wave, To make separating layer deform.
In another embodiment, the process for changing the property of separating layer (multiple separating layers) includes change temperature, thus Deform separating layer.
In one embodiment, buffer layer is reused to form new photovoltaic stack layer and include surface treatment.
In one embodiment, surface treatment uses chemical etching or polishing or physical etch or polishing.
In another embodiment, surface treatment carries out resurfacing using the deposition of the additional thin layers of buffer layer.
In one embodiment, photoelectric device is light emitting diode.
In one embodiment, separating layer can be zinc oxide.
Embodiments of the present invention include continuous pixellated structure comprising completely or partially continuous active layer, as The contact portion and/or current-diffusion layer of elementization.
In the present embodiment, pad and/or binder course may be present in the contact portion and/or current-diffusion layer of pixelation Top on.
In embodiment of above, dielectric openings may be present in the contact portion and/or current-diffusion layer of each pixelation On top.
Another embodiment includes donor substrate, which includes having the micro element of bonding pad and filling micro- The filled layer in the space between device.
Another embodiment includes the temporary substrates with binder course, and the micro element from donor substrate is bound to the combination Layer.
Another embodiment includes heat transfer technology, the technology the following steps are included:
1) micro element on temporary substrates is aligned with the bonding pad of system substrate；
2) fusing point of the bonding pad in system substrate is higher than the fusing point of the binder course in temporary substrates；
3) heat distribution is generated, both the bonding pad and binder course are melted, binder course is then made to keep melting and is made Bonding pad solidification；And
4) temporary substrates are separated with system substrate；
In another embodiment in transfer techniques, heat distribution is by local heat source or global heat source or the rwo production It is raw.
Another embodiment includes micro element structure, wherein at least one anchor portion passes through stripping process from alms giver in device Micro element is kept to donor substrate after substrate release.
Another embodiment includes the transfer techniques of micro element structure, wherein by thrust or passes through pulling force in micro element It is bound to after the pad received in substrate or in the meantime, anchor portion discharges micro element.
In another embodiment, according to the anchor portion of micro element structure include extended to from the side of micro element substrate to A few layer.
In another embodiment, according to the anchor portion of micro element structure include gap and at the top of the gap at least one A layer.
In another embodiment, according to the filled layer that the anchor portion of micro element structure includes around device.
Another embodiment includes the structure according to micro element structure, wherein by control temperature make remove micro element with The viscosity of layer between donor substrate increases to serve as anchor portion.
Another embodiment includes the release process in the anchor portion in micro element structure, wherein adjusts temperature to reduce anchor portion Power between micro element.
Another embodiment includes that micro element is transferred to the process received in substrate, wherein micro element is formed in box； By box and receive the selected land regional alignment in substrate；And it will be relevant micro- to selected land region in box Device is transferred to reception substrate.
Another embodiment includes that micro element is transferred to the process received in substrate, wherein forms micro element to box In；Select the micro element group for the defective micro element for having less than threshold value；By the selected micro element group in box and receive Selected land regional alignment in substrate；And the micro element relevant to selected land region in box is transferred to Receive substrate.
A kind of embodiment including box, the box have the micro element from the multiple types wherein shifted.
A kind of embodiment including micro element box, wherein sacrificial layer is by at least side of micro element and filled layer or knot Close layer separation.
A kind of embodiment, wherein sacrificial layer is removed to discharge micro element from filled layer or binder course.
A kind of embodiment, wherein sacrificial layer discharges micro element from filler under some conditions (such as high temperature).
Micro element can be tested to extract information related with micro element, including but not limited to defect, uniformity, operating condition Deng.In one embodiment, micro element (multiple micro elements) interim combination to box, the box has one for testing micro element A or multiple electrodes.In one embodiment, another electrode is deposited after micro element is located in box.This electrode can be used for Micro element is tested before or after patterning.In one embodiment, box is placed in predetermined position that (predetermined position can To be receiving member).Box and/or reception substrate are moved to be aligned.At least one selected micro element, which is transferred to, to be connect Receive substrate.As on compartmentalized box for holding assorted fruits and candies/box in there are more micro elements, then move box or receive substrate with in identical reception substrate New region or the alignment of new reception substrate, and at least another selected device (multiple selected devices) is transferred to newly Position.This process can be continued until that box does not have enough micro elements, and at this moment, new box can be placed in predetermined position.One In a example, the transfer of selected device is controlled based on the information extracted from box.In one example, the defect extracted from box Information can be used for having the cumulative number of the defect more than the defect counts of threshold value or transfer will be micro- more than threshold value by eliminating The transfer of device group is restricted to below threshold number will transfer to the number for the defective device for receiving substrate.Show another In example, the parameter extracted based on one or more is subjected to branch mailbox to box, and each case will be used for different applications.Another In situation, based on one or more parameter and having close to the box of performance will be used in a reception substrate.Can combine here to Example out is to improve box transfer performance.
In embodiments, physical contact and pressure and/or temperature can be used for device being transferred to reception substrate from box In.Herein, pressure and/or temperature can produce binding force (chucking power) keeping micro element to reception substrate and/or temperature The contact force between micro element and box can also be reduced.Therefore, micro element can be transferred to reception substrate.In the case, with The rest part for receiving substrate is compared, and receives the position configurability with higher for distributing to micro element on substrate to reinforce turning Move past journey.In embodiments, box can not have micro element in some regions, and some regions can be with reception substrate not Desired region contacts (position of other kinds of micro element is such as distributed to during transfer process).The two examples can be into Row combination.In embodiments, the distribution position of the micro element on substrate is optionally soaked with adhesive, or is closed with combining Gold covering, or additional structure is placed on distribution position.In punching course, can be used individual box, printing or other Technique.In embodiments, selected micro element is removable closer to receiving substrate to reinforce local transfer on box.Another In one situation, receives substrate and apply pulling force to assist or start transfer of the micro element from box.Pulling force can be combined with other power.
In one embodiment, shell is by the micro element in supporting box.Shell can be in donor substrate or box substrate Micro element manufacture or separately made shell, then micro element is moved in shell and is bound to box.In an embodiment party In formula, at least one polymer (or another type of material) on the top for being deposited on box substrate may be present.It is served as a contrast from alms giver The micro element at bottom is pushed into polymeric layer.Micro element can locally or globally be separated with donor substrate.The layer can be in device Part solidifies before or after separating with donor substrate.If multiple and different devices are integrated into box, which can specially be schemed Case.In the case, a type of layer is produced, so that micro element to be buried in this layer to and be made micro element and its alms giver point From.Then, another layer is deposited and patterned for the micro element of next type.Then, the second micro element is embedded in relevant layer.? Under all situations, this layer can cover micro element a part or entire device.In another situation, micro element be transferred to box it Afterwards, by polymer, organic matter or other layer building shells.Shell can have different shapes.In oneainstance, shell can be with Device shape matching.Side wall of outer shell is short than micro element height.Side wall of outer shell can be connected to micro element before transfer cycle Bearing is provided for the different post-processing of the micro element in box and the encapsulation of micro element box, for transporting and storing.Shell Side wall can be separated, or can pass through different mode (such as, heat, erosion before transfer cycle or during transfer cycle Carve or exposure) weaken and the connection of micro element from device.It may be present and keep micro element to the contact point of box substrate.It is connect with box The contact point of touching can be the bottom side or top side of device.Contact point can pass through the not Tongfang of such as hot chemical treatment or exposure Formula dies down or eliminates before transfer or in the meantime.This process can be executed for some selected devices, or can be on box All micro elements globally execute this process.Contact portion can also to be conductive, with can by device at biasing contact point and Other electrodes of micro element are connected to test device.During transfer cycle, box can be located at micro- to prevent under reception substrate Device falls off when contact point is removed or weakened by the overall situation from shell.
In one embodiment, micro element box may include at least one anchor portion, which protects micro element It holds to box surface.Box and/or reception substrate are moved, to make some positions in some micro elements and reception substrate in box Alignment.This anchor portion can be during pushing box and reception substrate or during pulling device by reception substrate in pressure toward each other Lower fracture.Micro element, which can be stayed in for good and all, to be received on substrate.Anchor portion can be located on the side of micro element or positioned at the top of micro element At portion (or bottom).
Top side is side of the device towards box, and bottom is the opposite side of micro element.Other sides refer to side or Side wall.
In one embodiment, micro element can be tested to extract information related with micro element, including but not limited to lacked Sunken, uniformity, operating condition etc..Box can be placed in predetermined position (predetermined position can be receiving member).Box and/or reception Substrate can be moved to be aligned.At least one selected micro element can be transferred to reception substrate.As on compartmentalized box for holding assorted fruits and candies/box in There are more micro elements, then box or receives substrate and can be moved to and the identical new region or new reception received in substrate Substrate alignment, and at least another selected device (multiple selected devices) can be transferred to new position.This process can be after Continue until box does not have enough micro elements, at this moment, new box will be placed in predetermined position.In oneainstance, it can be based on The information extracted from box controls the transfer of selected device.In oneainstance, can be used for leading to from the defect information that box extracts Cross eliminate have more than threshold value defect counts or transfer defect cumulative number by be more than threshold value micro element group transfer Threshold number is restricted to below will transfer to the number for the defective device for receiving substrate.In another situation, it will be based on The parameter that one or more is extracted carries out branch mailbox to box, and each case can be used for different applications.In another situation, it is based on One or more parameters and having close to the box of performance will be used in a reception substrate.Example given here can be combined to change Kind box transfer performance.
One embodiment includes that micro element is transferred to the method for receiving substrate.This method comprises:
A) preparation has the box of substrate, wherein micro element is located at least one surface of box substrate, and box is at one With the more micro elements in micro element position in the corresponding region than identical size in reception substrate in region.
B) by extracting the device at least one parameter testing box.
C) box is picked or is transferred to micro element towards the position for receiving substrate.
D) test data be used to select the micro element group on box.
E) by selected position alignment in micro element group selected on box and reception substrate.Micro element group is turned from box Move to reception substrate.
F) process d and e can be continued to be completely filled until not having any effective device in box or receiving substrate.
One embodiment includes the box with the micro element of more than one type, the micro element of more than one type with The identical spacing of spacing received in substrate is located in box.
One embodiment includes the box with substrate, wherein and micro element is (direct or indirect) on the surface of box, And micro element oblique in row or column, so that the edge of at least one row or column not edge pair at least another row or column It is quasi-.
One embodiment is that micro element is transferred to the method for receiving substrate.This method includes shifting micro element array Into substrate, wherein the edge of at least one row or column of the micro element shifted is not at least another with the device that is shifted The edge of row or column is aligned.
One embodiment includes that micro element is transferred to the method for receiving substrate.This method includes by device array from applying Main substrate is transferred to reception substrate, wherein in any region similar with the transfer size of array received on substrate, at least There are a row or column, there is the micro element of two different zones from donor substrate corresponding with transfer array.
One embodiment includes that micro element array is transferred to the process received in substrate, wherein micro element is in array Edge oblique to eliminate suddenly change.
Another embodiment includes that micro element array is transferred to the process received in substrate, wherein before transfer, right The performance of micro element at the neighboring edge of two arrays of micro element is matched.
Another embodiment include micro element array is transferred to receive substrate in process, wherein micro element array by It is filled at least from the micro element of two different zones of micro element donor substrate.
Another embodiment includes that micro element is transferred to the process received in substrate from box, wherein multiple micro element boxes Positioned at receive in the corresponding different location of the different zones of substrate, then box is aligned with reception substrate, and by micro element from Box is transferred to reception substrate.
According to one embodiment, a kind of method that multiple micro elements are transferred to and are received in substrate is provided.This method Including multiple micro elements are arranged in one or more boxes, by one or more boxes and with the mould of at least one alignment mark Template is aligned by plate alignment by one or more boxes in conjunction with template with substrate is received；And multiple micro elements are turned from template It moves to and receives in substrate.
According to some embodiments, by template with receive substrate be directed at including by one of following item stretching template with And the combination of one or more boxes and template: thermal, optical bond, in conjunction with vacuum, Van der Waals force or mechanical grip.
Embodiment there is provided a kind of transfer equipments according to another.Transfer equipment includes template and coupling apparatus, wherein Template accommodates at least one box that micro element is housed, and coupling apparatus is located in template to assist micro element from least by metastatic capacity One box is transferred to reception substrate.
According to another embodiment, each box has individual coupling apparatus.Transfer equipment further includes for protecting template Hold supporting structure in position and the height adjuster between template and at least one box.Supporting structure packet Include one of following item: suction unit, the pin of loading spring and the air-bed made of compressed gas.
According to another embodiment, the region between at least one box and coupling apparatus in template has different hot Matter and engineering properties, and multiple through-holes are formed in the different zones between the box and coupling apparatus in template.For each Region adjusts the size of multiple through-holes to adjust thermal property and engineering properties.
Embodiment there is provided a kind of methods that multiple micro elements are transferred in system substrate according to another.This method Including multiple micro elements on one or more boxes are arranged in system substrate；Select one or more that can turn in each box The micro element group of shifting；Identify the number of the defective micro element in each transferable micro element group；And simultaneously adjustment have it is scarce Transfer of the sunken micro element into system substrate.
According to another embodiment, if wherein the transfer for adjusting defective micro element includes: defective micro element Number summation be greater than threshold value, then repair or remove the defective micro element in each box, select the son of one or more boxes Collection, wherein the intersection of not transferable micro element group is maximum, and turning for system substrate is adjusted to using the subset of box It moves；The subset of box is selected, wherein the number summation of defective micro element is less than threshold value, and is filled using the subset of box System substrate；The subset of box is selected, wherein it is optimised higher than the number summation of threshold value, defective micro element, and use The subset of box carrys out fill system substrate.
According to another embodiment, method further includes biasing micro element by system substrate to test shifted micro element With the connection received between substrate and the number for adjusting the defective micro element that incorporating parametric is identified with REPSH repair shop.
The above description of one or more embodiments of the invention has been presented for the purpose for showing and describing.Its It is not intended to the exhaustive present invention or limits the invention to disclosed precise forms.According to above teaching, there may be many Modifications and changes.It is intended to limit the scope of the present invention by this detailed description, but is limited by appended claims.

Claims (18)

1. a kind of be transferred to multiple micro elements the method received in substrate, which comprises
The multiple micro element is arranged in one or more boxes；
One or more of boxes are aligned with the template at least one alignment mark；
By one or more of boxes in conjunction with the template；
The template is aligned with the reception substrate；And
The multiple micro element is transferred in the reception substrate from the template.
2. according to the method described in claim 1, wherein, the template is aligned with the reception substrate including stretching the mould Plate.
3. according to the method described in claim 1, wherein, by one in following item by one or more of boxes with it is described Template combines: thermal, optical bond, vacuum combination, Van der Waals force or mechanical grip.
4. transfer equipment, comprising:
Template accommodates at least one box that micro element is housed；And
Coupling apparatus is located in the template, assists the micro element to be transferred to from least one described box by metastatic capacity and connect Receive substrate.
5. transfer equipment according to claim 4, wherein each box all has individual coupling apparatus.
6. transfer equipment according to claim 4, further includes:
Supporting structure, for the template to be held in position in.
7. transfer equipment according to claim 6, wherein the supporting structure includes one in following item: suction dress It sets, the pin of loading spring and the air-bed made of compressed gas.
8. transfer equipment according to claim 4, further includes:
Height adjuster, between the template and at least one described box.
9. transfer equipment according to claim 4, wherein at least one described box and the combination in the template fill Region between setting has different thermal property and engineering properties.
10. transfer equipment according to claim 4, wherein the box in the template and the coupling apparatus it Between different zones on be formed with multiple through-holes.
11. transfer equipment according to claim 10, wherein the size of the multiple through-hole is directed to each region quilt Adjustment is to adjust thermal property and engineering properties.
12. a kind of method being transferred to multiple micro elements in system substrate, which comprises
The multiple micro element on one or more boxes is arranged in the system substrate；
One or more micro element groups that can be shifted are selected in each box；
Identify the number of the defective micro element in the micro element group that can each shift；And
The defective micro element is adjusted to the transfer in the system substrate simultaneously.
13. according to the method for claim 12, wherein the transfer of the adjustment defective micro element includes: described In the case that the summation of the number of defective micro element is greater than threshold value, repairs or remove and is in each box described defective micro- Device.
14. according to the method for claim 12, wherein the transfer of the adjustment defective micro element further include:
The subset of one or more of boxes is selected, in the subset, the set that can not be shifted in micro element set Intersection is maximum, and
The system substrate is transferred to using the subset of the box.
15. according to the method for claim 12, wherein the transfer of the adjustment defective micro element further include:
The subset of box is selected, in the subset, the number summation of defective micro element is less than threshold value；And
The system substrate is filled using the subset of the box.
16. according to the method for claim 12, wherein the transfer of the adjustment defective micro element further include:
The subset of selection box optimizes the summation of the number of the defective micro element higher than threshold value in the subset； And
The system substrate is filled using the subset of the box.
17. according to the method for claim 12, further includes:
The micro element is biased by the system substrate to test shifted micro element and the company received between substrate It connects.
18. according to the method for claim 12, further includes:
The defective micro element for the number that adjustment incorporating parametric is recognized with REPSH repair shop.
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