TW201913919A - 半導體元件及其製作方法 - Google Patents

半導體元件及其製作方法 Download PDF

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TW201913919A
TW201913919A TW106141668A TW106141668A TW201913919A TW 201913919 A TW201913919 A TW 201913919A TW 106141668 A TW106141668 A TW 106141668A TW 106141668 A TW106141668 A TW 106141668A TW 201913919 A TW201913919 A TW 201913919A
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Taiwan
Prior art keywords
conductor
substrate
conductors
width
semiconductor device
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TW106141668A
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English (en)
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TWI763747B (zh
Inventor
黃冠育
藍子凱
殷壽志
許書嘉
李百淵
黃松輝
李祥帆
韓英信
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台灣積體電路製造股份有限公司
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Publication of TWI763747B publication Critical patent/TWI763747B/zh

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Abstract

本發明實施例係關於一種半導體裝置，其包括基板、封裝、第一導體及第二導體。該基板包括第一表面及與該第一表面相對之第二表面。該封裝置放於該基板上方。該等第一導體置放於該基板上方。該等第二導體置放於該基板上方，其中該等第一導體及該等第二導體實質上處於同一層級，且該等第二導體之寬度大於該等第一導體之寬度。

Description

半導體元件及其製作方法
本揭露關於半導體裝置及其製造方法。
在積體電路之封裝中，半導體晶粒可藉由接合來堆疊，且可接合至例如介入層及封裝基板之其他封裝組件。所得封裝被稱作三維積體電路(3DIC)。然而，冷結問題及橋接問題為3DIC中之挑戰。
本發明之一個實施例係關於一種半導體裝置，該半導體裝置包含：基板，其包括第一表面及與該第一表面相對之第二表面；封裝，其在該基板上方；複數個第一導體，其在該基板上方；及複數個第二導體，其在該基板上方，其中該等複數個第一導體及該等複數個該等第二導體實質上處於同一層級，且該等第二導體之寬度大於該等第一導體之寬度。 本發明之另一實施例係關於一種半導體裝置，該半導體裝置包含：基板，其包括第一表面及與該第一表面相對之第二表面；封裝，其在該基板上方；複數個第一導體，其在該基板上方；及複數個第二導體，其在該基板上方，其中該等複數個第一導體及該等複數個該等第二導體實質上處於同一層級，且該等第二導體之體積大於該等第一導體之體積。 本發明之另一實施例係關於一種用於製造半導體裝置之方法，其包含：接收基板；在該基板上方形成第一導體及第二導體，其中該等第二導體之高度大於該等第一導體之高度；及藉由該等第一導體及該等第二導體將該基板接合至電子組件。
以下揭示內容提供用於實施所提供主題之不同特徵之許多不同實施例或實例。下文描述元件及配置之具體實例以簡化本揭露。當然，此等具體實例僅為實例且不意欲為限制性的。舉例而言，在以下說明中第一特徵形成於第二特徵上方或上可包括其中第一特徵及第二特徵直接接觸地形成之實施例，且亦可包括其中額外特徵可形成於第一特徵與第二特徵之間使得第一特徵及第二特徵可不直接接觸之實施例。另外，本揭露可在各種實例中重複元件符號及/或字母。此重複係出於簡單及清晰目的且本身不指示所論述之各種實施例及/或組態之間的關係。 進一步地，可為便於說明而在本文中使用空間相對術語(例如，「下方」、「下面」、「下部」、「上面」、「上部」、「上」及類似者)來描述一個元件或特徵與另一(些)元件或特徵的關係，如各圖中所圖解說明。該等空間相關術語意欲囊括除各圖中所描繪之定向之外的在使用或操作中之裝置之不同定向。設備可以其他方式定向(旋轉90度或處於其他定向)且因此可同樣地解釋本文中所使用之空間相對敘詞。 如本文中所使用，例如「第一」、「第二」及「第三」之術語描述各種元件、組件、區域、層及/或區段，此等元件、組件、區域、層及/或區段不應受此等術語限制。此等術語可僅用於將一個元件、組件、區域、層或區段與另一元件、組件、區域、層或區段區分開。例如「第一」、「第二」及「第三」之術語在用於本文中時不暗示順序或次序，除非上下文明確指示。 如本文中所使用，術語「大致」、「實質上(substantially)」、「實質上(substantial)」及「大約」用於描述且解釋小變化。當結合事件或情況使用時，該等術語可指代其中事件或情況精確地發生之實例以及其中事件或情況近似地發生之實例。舉例而言，當結合數值使用時，術語可指代該數值之小於或等於±10% (例如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%或小於或等於±0.05%)之變化範圍。舉例而言，若兩個數值之間的差小於或等於該等值之平均數之±10%，例如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%或小於或等於±0.05%，則該等值可被視為「實質上」相同或相等。舉例而言，「實質上」平行可指代相對於0°之角度變化範圍，該等角度變化範圍小於或等於±10°，例如小於或等於±5°、小於或等於±4°、小於或等於±3°、小於或等於±2°、小於或等於±1°、小於或等於±0.5°、小於或等於±0.1°或小於或等於±0.05°。舉例而言，「實質上」垂直可指代相對於90°之角度變化範圍，該等角度變化範圍小於或等於±10°，例如小於或等於±5°、小於或等於±4°、小於或等於±3°、小於或等於±2°、小於或等於±1°、小於或等於±0.5°、小於或等於±0.1°或小於或等於±0.05°。 亦可包括其他特徵及過程。舉例而言，可包括測試結構以輔助3D封裝或3DIC裝置之驗證測試。該測試結構可包括(舉例而言)形成於重佈層中或基板上之測試墊，此允許測試3D封裝或3DIC、使用探針及/或探針卡及類似者。可對中間結構以及最終結構執行驗證測試。另外，本文中所揭示之結構及方法可結合併入有已知良好晶粒之中間驗證之測試方法使用以增加合格率且降低成本。 在本揭露之一些實施例中，半導體裝置包括置放於同一層級處之兩個或多於兩個類型之導體，該等導體具有不同體積及/或寬度、形成於基板之不同區域處以分別緩解冷結問題及橋接問題。 圖1為圖解說明根據本揭露之一或多個實施例之各個態樣的製造半導體裝置之方法之流程圖。方法100以操作110開始，其中接收基板。方法以操作120繼續，其中在基板上方形成第一導體及第二導體。第二導體之高度大於第一導體之高度。方法以操作130繼續，其中基板藉由第一導體及第二導體接合至電子組件。 方法100僅僅為實例，且不意欲限制本揭露超出申請專利範圍中明確陳述之內容。可在方法100之前、期間及之後提供額外操作，且可針對方法之額外實施例替換、消除或移動所描述之一些操作。 圖2A、圖2B、圖2C及圖2D為在根據本揭露之一或多個實施例的製造半導體裝置之各種操作中之一者時的示意圖。如圖2A中所描繪，接收基板10。在一些實施例中，基板10可包括晶圓、半導體基板、介入層、封裝基板或類似者。基板10包括第一表面10A及與第一表面10A相對之第二表面10B。在一些實施例中，第一接合墊121及第二接合墊122形成於基板10上且自第一表面10A暴露。第一接合墊121及第二接合墊122可經組態以接收且電連接至將形成之導體。在一些替代實施例中，第一接合墊121及第二接合墊122可自第二表面10B暴露。在一些實施例中，基板10可進一步包括電連接至第一接合墊121及第二接合墊122之一或多個電路層14，例如重佈層(RDL)、導電通孔或類似者。 如圖2B中所描繪，鈍化層16形成於基板10上方。在一些實施例中，鈍化層16形成於基板10之第一表面10A上方。在一些實施例中，鈍化層16可包括焊料遮罩、絕緣層或類似者。鈍化層16包括分別暴露第一接合墊121及第二接合墊122之第一凹部161及第二凹部162。在一些實施例中，第一凹部161之寬度WA1大於第二凹部162之寬度WA2。在一些實施例中，第二凹部162暴露第二接合墊122之一部分，且第二接合墊122之另一部分被鈍化層16覆蓋。另一方面，第一凹部161可完全地暴露第一接合墊121，且第一接合墊121可與鈍化層16分開一間隙。 如圖2C中所描繪，導電材料形成於第一接合墊121及第二接合墊122上方以藉由第一凹部161形成第一導體18且藉由第二凹部162形成第二導體20。在一些實施例中，可在形成導電材料之後執行回焊操作。在一些實施例中，第一導體18及第二導體20可包括導電凸塊、導電球或類似者。在一些實施例中，第一導體18及第二導體20之材料可包括但不限於銀(Ag)、銅(Cu)、錫(Sn)、其組合或其他適合導電材料。在一些實施例中，第一導體18可為非焊料遮罩定義(NSMD)之導體，而第二導體20可為焊料遮罩定義(SMD)之導體。藉由實例之方式，覆蓋第二接合墊122之一部分之鈍化層16可幫助定義第二導體20之寬度W2，而第一導體18之寬度W1可由第一接合墊121之寬度定義。在一些實施例中，第一導體18與各別第一凹部161之邊緣161E分開，且第二導體20與各別第二凹部162之邊緣162E接觸。在一些實施例中，第一導體18之體積及第二導體20之體積實質上相同，第一導體18之高度H1由第一接合墊121之寬度定義，且第二導體20之高度H2由第二凹部162之寬度WA2定義。由於第二凹部162之寬度WA2小於第一接合墊121之寬度，因此第二導體20之寬度W2小於第一導體18之寬度W1，且第二導體20之高度H2大於第一導體18之高度H1。在一些實施例中，第二導體20之高度H2可比第一導體18之高度H1大大約5%至大約20%，例如大約10%，但不限於此。在一些實施例中，第一導體18及第二導體20實質上置放於同一層級處。 如圖2D中所描繪，基板10可藉由第一導體18及第二導體20接合至電子組件30以形成半導體裝置1。在一些實施例中，電子組件30可包括晶圓、半導體基板、介入層、封裝基板、印刷電路板(PCB)或類似者。在一些實施例中，電子組件30可進一步包括經組態以接收第一導體18及第二導體20之接合墊(未展示)。在一些實施例中，可執行回焊操作。在接合基板10及電子組件30之後，第二導體20之高度H2'及第一導體18之高度H1'可實質上相同，且第二導體20之寬度W2'可大於第一導體18之寬度W1'。在一些實施例中，具有較大高度之第二導體20可幫助避免由於扭曲或其他原因而出現冷結。在一些實施例中，具有較小高度之第一導體18可幫助避免由於扭曲或其他原因而出現橋接(亦即，鄰近導體之間的短路)。在一些實施例中，第二導體20可經組態以形成於其中趨向於發生冷結之冷結熱區中，而第一導體18可經組態以形成於其中趨向於發生橋接之橋接熱區中。在一些實施例中，半導體裝置1可為包括彼此堆疊之兩個或多於兩個電子組件或基板之三維封裝結構，且第一導體18及第二導體20可形成於鄰近電子組件或基板中之任何兩者中。 本揭露之半導體裝置及其製造方法不限於上文所提及之實施例，且可具有其他不同實施例。為簡化說明且為了便於在本揭露之實施例中之每一者之間進行比較，用等同編號標記以下實施例中之每一者中之等同組件。為了使將實施例之間的差異進行比較更容易，以下說明將詳述不同實施例之間的相異點且將不冗餘地描述等同特徵。 圖3A、圖3B及圖3C為在根據本揭露之一或多個實施例的製造半導體裝置之各種操作中之一者時的示意圖。如圖3A中所描繪，接收基板10。在一些實施例中，基板10可進一步包括自第一表面10A暴露且經組態以接收將形成之導體之第一接合墊121及第二接合墊122。在一些替代實施例中，第一接合墊121及第二接合墊122可自第二表面10B暴露。在一些實施例中，基板10可進一步包括電連接至第一接合墊121及第二接合墊122之一或多個電路層14，例如重佈層(RDL)、導電通孔或類似者。在一些實施例中，鈍化層16形成於基板10上方。在一些實施例中，鈍化層16形成於基板10之第一表面10A上方。在一些實施例中，鈍化層16可包括焊料遮罩或類似者。鈍化層16包括分別暴露第一接合墊121及第二接合墊122之第一凹部161及第二凹部162。在一些實施例中，第一凹部161之寬度WA1大於第二凹部162之寬度WA2。在一些實施例中，鈍化層16覆蓋第一接合墊121之一部分及第二接合墊122之一部分。 如圖3B中所描繪，導電材料形成於第一接合墊121及第二接合墊122上方以藉由第一凹部161形成第一導體18且藉由第二凹部162形成第二導體20。在一些實施例中，可在形成導電材料之後執行回焊操作。在一些實施例中，覆蓋第一接合墊121之一部分之鈍化層16可幫助定義第一導體18之寬度W1，且覆蓋第二接合墊122之一部分之鈍化層16可幫助定義第二導體20之寬度W2。在一些實施例中，第一導體18之體積及第二導體20之體積實質上相同，第一導體18之高度H1由第一凹部161之寬度WA1定義，且第二導體20之高度H2由第二凹部162之寬度WA2定義。由於第二凹部162之寬度WA2小於第一凹部161之寬度WA1，因此第二導體20之寬度W2小於第一導體18之寬度W1，且第二導體20之高度H2大於第一導體18之高度H1。在一些實施例中，第二導體20之高度H2可比第一導體18之高度H1大大約5%至大約20%，例如大約10%，但不限於此。 如圖3C中所描繪，基板10可藉由第一導體18及第二導體20接合至且電連接至電子組件30以形成半導體裝置2。在一些實施例中，可執行回焊操作。在接合基板10及電子組件30之後，第二導體20之高度H2'及第一導體18之高度H1'可實質上相同，且第二導體20之寬度W2'可大於第一導體18之寬度W1'。 圖4A、圖4B、圖4C、圖4D及圖4E為在根據本揭露之一或多個實施例的製造半導體裝置之各種操作中之一者時的示意圖。如圖4A中所描繪，接收基板10。在一些實施例中，基板10可進一步包括自第一表面10A暴露之第一接合墊121及第二接合墊122，以及電連接至第一接合墊121及第二接合墊122之一或多個電路層14。第一導電材料形成於第一接合墊121及第二接合墊122上方以形成具有相同高度之導體17。在一些實施例中，可對第一導電材料執行回焊操作以形成導體17。 如圖4B中所描繪，經圖案化遮罩層22形成於基板10上方。經圖案化遮罩層22可包括暴露導體17中之一者之凹部221。如圖4C中所描繪，第二導電材料24形成於凹部221中。在一些實施例中，第二導電材料24及第一導電材料可包括但不限於不同材料。在一些實施例中，第二導電材料24之熔點可低於第一導電材料之熔點。藉由實例之方式，第一導電材料可包括銀(Ag)、銅(Cu)、錫(Sn)、其組合或類似者，且第二導電材料24可包括鉛(Pb)、鉍(Bi)、其組合或類似者。 如圖4D中所描繪，可對第一導電材料及第二導電材料24執行回焊操作以形成具有高度H1之第一導體18及具有高度H2之第二導體20。第一導體18由第一導電材料形成，而第二導體20由第一導電材料及第二導電材料24形成。因此，第二導體20之高度H2大於第一導體18之高度H1。在一些實施例中，第二導體20之熔點低於第一導體18之熔點。在一些實施例中，第二導體20之高度H2可比第一導體18之高度H1大大約5%至大約20%，例如大約10%，但不限於此。在一些實施例中，第一導體18之寬度W1及第二導體20之寬度W2實質上相同。 如圖4E中所描繪，基板10可藉由第一導體18及第二導體20接合至且電連接至電子組件30以形成半導體裝置3。在一些實施例中，可執行回焊操作。在接合基板10與電子組件30之後，第二導體20之高度H2'及第一導體18之高度H1'可實質上相同，且第二導體20之寬度W2'可大於第一導體18之寬度W1'。 圖5A及圖5B為根據本揭露之一些實施例的半導體裝置之示意圖，其中圖5A為根據本揭露之一些實施例的半導體裝置之俯視圖，且圖5B為沿著圖5A之半導體裝置之線A-A之剖面圖。如圖5A及圖5B中所描繪，半導體裝置4包括基板10、封裝50、第一導體18及第二導體20。封裝50置放於基板10上方。第一導體18及第二導體20置放於基板10上方且電連接至封裝50。在一些實施例中，封裝50、第一導體18及第二導體20置放於基板10之第一表面10A上方，且第一導體18及第二導體20置放於封裝50與基板10之第一表面10A之間。在一些實施例中，第二導體20之寬度W2'大於第一導體18之寬度W1'。第二導體20之體積可實質上等於或大於第一導體18之體積。在一些實施例中，第一導體18及第二導體20可藉由(例如)前述實施例中所描述之方法來形成，但不限於此。 在一些實施例中，封裝50可包括但不限於晶圓上晶片(CoW)結構。在一些實施例中，封裝50可包括介入層52、至少一個第一半導體晶粒60、至少一個第二半導體晶粒70、第一模塑層62及第二模塑層72。第一半導體晶粒60置放於介入層52上方且電連接至介入層52。在一些實施例中，第一半導體晶粒60藉由導電結構64 (例如導電凸塊、導電球、導電膏或類似者)電連接至介入層52。第二半導體晶粒70置放於介入層52上方且電連接至介入層52，且第二半導體晶粒70鄰近於至少一個第一半導體晶粒60置放。在一些實施例中，第二半導體晶粒70藉由導電結構74 (例如導電凸塊、導電球、導電膏或類似者)電連接至介入層52。在一些實施例中，第一半導體晶粒60及第二半導體晶粒70包括具有不同特性之不同類型之晶粒。藉由實例之方式，第一半導體晶粒60可包括(若干)記憶體晶粒，且第二半導體晶粒70可包括(若干)系統單晶片(SOC)晶粒。在一些實施例中，第一半導體晶粒60在置放於介入層52上方之前用環繞第一半導體晶粒60之側壁60E之第一模塑層62封裝，而第二半導體晶粒70在置放於介入層52上方之後經封裝。第二模塑層72置放於介入層52上方且環繞第二半導體晶粒70之側壁70E及第一模塑層62之側壁62E。在一些實施例中，第一模塑層62及第二模塑層72之特性不同。藉由實例之方式，第一模塑層62及第二模塑層72可包括具有不同熱膨脹係數(CTE)之不同材料。 在一些實施例中，第二導體20形成於其中趨向於發生冷結之冷結熱區52R中。舉例而言，第二導體20實質上對準至至少一個第一半導體晶粒60與至少一個第二半導體晶粒70之間的邊界52C，且實質上對準至至少一個第二半導體晶粒70與介入層52之邊緣52E之間的邊界52D。在一些實施例中，第一導體18形成於其中趨向於發生橋接之橋接熱區52T中。舉例而言，第一導體18可對準至介入層52之角落。 圖6A及圖6B為根據本揭露之一些實施例的半導體裝置之示意圖，其中圖6A為根據本揭露之一些實施例的半導體裝置之俯視圖，且圖6B為沿著圖6A之半導體裝置之線B-B之剖面圖。如圖6A及圖6B中所描繪，半導體裝置5之第一半導體晶粒60及第二半導體晶粒70配置成不同組態。第二導體20可配置於不同於圖5A及圖5B中之冷結熱區52R的冷結熱區52R中以避免冷結。第一導體18可配置於不同於圖5A及圖5B中之橋接熱區52T的橋接熱區52T中以避免橋接。 圖7A及圖7B為根據本揭露之一些實施例的半導體裝置之示意圖，其中圖7A為根據本揭露之一些實施例的半導體裝置之俯視圖，且圖7B為沿著圖7A之半導體裝置之線C-C之剖面圖。如圖7A及圖7B中所描繪，半導體裝置6之第一半導體晶粒60及第二半導體晶粒70配置成不同組態。第二導體20可配置於不同於圖5A及圖5B中之冷結熱區52R或圖6A及圖6B中之冷結熱區52R的冷結熱區52R中以避免冷結。第一導體18可配置於不同於圖5A及圖5B中之橋接熱區52T或圖6A及圖6B中之橋接熱區52T的橋接熱區52T中以避免橋接。 圖8為根據本揭露之一些實施例的半導體裝置之示意圖。如圖8中所描繪，半導體裝置7可進一步包括置放於第一導體18與第二導體20之間的一或多個第三導體19，且第三導體19之寬度W3'介於第一導體18之寬度W1'與第二導體20之寬度W2'之間。在一些實施例中，第一導體18、第二導體20及第三導體19實質上置放於同一層級處，亦即同一水平處。在一些實施例中，半導體裝置7可包括具有不同寬度之三個或多於三個類型之導體。藉由實例之方式，導體之寬度可自冷結熱區至橋接熱區逐漸減小。 圖9A、圖9B、圖9C及圖9D為在根據本揭露之一或多個實施例的製造半導體裝置之各種操作中之一者時的示意圖。如圖9A及圖9B中所描繪，接收包括第一表面10A及與第一表面10A相對之第二表面10B之基板10。封裝80形成於基板10之第一表面10A上方。在一些實施例中，封裝80包括介入層82、在介入層82上方且藉由導電結構85電連接至介入層82之一或多個半導體晶粒84及覆蓋(若干)半導體晶粒84之模塑層86。封裝80可進一步包括在介入層82與基板10之間且電連接至介入層82及基板10之導電結構88。在一些實施例中，封裝80置放於基板10之第一表面10A上方。第一導體18及第二導體20形成於基板10上方且電連接至封裝80。在一些實施例中，第一導體18及第二導體20形成於基板10之第二表面10B上方。在一些實施例中，第二導體20之體積大於第一導體18之體積。在一些實施例中，第二導體20之寬度W2實質上等於第一導體18之寬度W1。在一些實施例中，第二導體20之高度H2大於第一導體18之高度H1。在一些實施例中，第一導體18及第二導體20可藉由(例如)前述實施例中所描述之方法來形成，但不限於此。在一些實施例中，第二導體20在封裝80下方，且第一導體18在基板之邊緣10E之近端。 如圖9C及圖9D中所描述，基板10藉由第一導體18及第二導體20接合至且電連接至電子組件30以形成半導體裝置8。在一些實施例中，電子組件30可包括印刷電路板(PCB)或類似者，且半導體裝置8可包括基板上覆晶圓上覆晶片(chip-on-wafer-on-substrate；CoWoS)結構。在接合基板10及電子組件30之後，第二導體20之高度H2'及第一導體18之高度H1'可實質上相同，且第二導體20之寬度W2'可大於第一導體18之寬度W1'。在一些實施例中，具有較大高度之第二導體20可幫助避免由於扭曲或其他原因而出現冷結。在一些實施例中，具有較小高度之第一導體18可幫助避免由於扭曲或其他原因而出現橋接(亦即，鄰近導體之間的短路)。在一些實施例中，第二導體20可經組態以形成於其中趨向於發生冷結之冷結熱區中，而第一導體18可經組態以形成於其中趨向於發生橋接之橋接熱區中。在一些實施例中，半導體裝置8可為包括彼此堆疊之兩個或多於兩個電子組件或基板之三維封裝結構，且第一導體18及第二導體20可形成於鄰近電子組件或基板中之任何兩者中。 圖10為根據本揭露之一些實施例的半導體裝置之示意圖。如圖10中所描繪，半導體裝置9可進一步包括置放於第一導體18與第二導體20之間的一或多個第三導體19，且第三導體19之寬度W3'介於第一導體18之寬度W1'與第二導體20之寬度W2'之間。在一些實施例中，第二導體20之高度H2'、第一導體18之高度H1'及第三導體19之高度H3'可實質上相同。在一些實施例中，半導體裝置9可包括具有不同寬度之三個或多於三個類型之導體。藉由實例之方式，導體之寬度可自基板10之中心至基板10之邊緣逐漸減小。 在本揭露之一些實施例中，具有不同體積及/或高度之兩個或多於兩個類型之導體形成於基板之不同區域處以分別緩解由於扭曲或其他原因而出現冷結問題及橋接問題。兩個或多於兩個類型之導體在基板接合至電子組件之後可具有實質上相同高度，但其可在半導體裝置之製造期間緩解冷結問題及橋接問題。導體之不同寬度可藉由修改各別導體之體積或組合物、使用具有不同寬度之凹部之焊料遮罩、修改各別接合墊之寬度或類似者來控制。 在一個例示性態樣中，一種半導體裝置包括基板、封裝、第一導體及第二導體。該基板包括第一表面及與該第一表面相對之第二表面。該封裝置放於該基板上方。該 第一導體置放於該基板上方。該等第二導體置放於該基板上方，其中該等第一導體及該等第二導體實質上處於同一層級，且該等第二導體之寬度大於該等第一導體之寬度。 在另一態樣中，一種半導體裝置包括基板、封裝、第一導體及第二導體。該基板包括第一表面及與該第一表面相對之第二表面。該封裝置放於該基板上方。該等第一導體置放於該基板上方。該等第二導體置放於該基板上方，其中該等第一導體及該等第二導體實質上處於同一層級，且該等第二導體之體積大於該等第一導體之體積。 在又一態樣中，一種用於製造半導體裝置之方法包括：接收基板；在該基板上方形成第一導體及第二導體，其中該等第二導體之高度大於該等第一導體之高度；且藉由該等第一導體及該等第二導體將該基板接合至電子組件。 前文概述數個實施例之結構使得熟習此項技術者可更好地理解本揭露之態樣。熟習此項技術者應瞭解，其可容易地使用本揭露作為設計或修改用於實施相同目的及/或實現本文中介紹之實施例之相同優點之其他過程及結構的基礎。熟習此項技術者亦應認識到，此類等效構造不背離本揭露之精神及範疇，且其可在不背離本揭露之精神及範疇之情況下在本文中做出各種改變、替代及變更。
1‧‧‧半導體裝置
2‧‧‧半導體裝置
3‧‧‧半導體裝置
4‧‧‧半導體裝置
5‧‧‧半導體裝置
6‧‧‧半導體裝置
7‧‧‧半導體裝置
8‧‧‧半導體裝置
9‧‧‧半導體裝置
10‧‧‧基板
10A‧‧‧第一表面
10B‧‧‧第二表面
10E‧‧‧邊緣
14‧‧‧電路層
16‧‧‧鈍化層
17‧‧‧導體
18‧‧‧第一導體
19‧‧‧第三導體
20‧‧‧第二導體
22‧‧‧經圖案化遮罩層
24‧‧‧第二導電材料
30‧‧‧電子組件
50‧‧‧封裝
52‧‧‧介入層
52C‧‧‧邊界
52D‧‧‧邊界
52E‧‧‧邊緣
52R‧‧‧冷結熱區
52T‧‧‧橋接熱區
60‧‧‧第一半導體晶粒
60E‧‧‧側壁
62‧‧‧第一模塑層
62E‧‧‧側壁
64‧‧‧導電結構
70‧‧‧第二半導體晶粒
70E‧‧‧側壁
72‧‧‧第二模塑層
74‧‧‧導電結構
80‧‧‧封裝
82‧‧‧介入層
84‧‧‧半導體晶粒
85‧‧‧導電結構
86‧‧‧模塑層
88‧‧‧導電結構
100‧‧‧方法
110‧‧‧操作
120‧‧‧操作
121‧‧‧第一接合墊
122‧‧‧第二接合墊
130‧‧‧操作
161‧‧‧第一凹部
161E‧‧‧邊緣
162‧‧‧第二凹部
162E‧‧‧邊緣
221‧‧‧凹部
H1‧‧‧高度
H1'‧‧‧高度
H2‧‧‧高度
H2'‧‧‧高度
H3'‧‧‧高度
W1‧‧‧寬度
W1'‧‧‧寬度
W2‧‧‧寬度
W2'‧‧‧寬度
W3'‧‧‧寬度
WA1‧‧‧寬度
WA2‧‧‧寬度
本揭露之實施例之態樣依據在藉助於附圖閱讀時進行的以下詳細說明得到最佳地理解。應注意，根據工業中之標準實踐，各種結構未按比例繪製。實際上，為論述清晰起見，可任意地增加或減小各種結構之尺寸。 圖1為圖解說明根據本揭露之一或多個實施例之各個態樣的製造半導體裝置之方法之流程圖。 圖2A、圖2B、圖2C及圖2D為在根據本揭露之一或多個實施例的製造半導體裝置之各種操作中之一者時的示意圖。 圖3A、圖3B及圖3C為在根據本揭露之一或多個實施例的製造半導體裝置之各種操作中之一者時的示意圖。 圖4A、圖4B、圖4C、圖4D及圖4E為在根據本揭露之一或多個實施例的製造半導體裝置之各種操作中之一者時的示意圖。 圖5A及圖5B為根據本揭露之一些實施例的半導體裝置之示意圖。 圖6A及圖6B為根據本揭露之一些實施例的半導體裝置之示意圖。 圖7A及圖7B為根據本揭露之一些實施例的半導體裝置之示意圖。 圖8為根據本揭露之一些實施例的半導體裝置之示意圖。 圖9A、圖9B、圖9C及圖9D為在根據本揭露之一或多個實施例的製造半導體裝置之各種操作中之一者時的示意圖。 圖10為根據本揭露之一些實施例的半導體裝置之示意圖。

Claims (1)

  1. 一種半導體裝置，其包含： 基板，其包括第一表面及與該第一表面相對之第二表面； 封裝，其在該基板上方； 複數個第一導體，其在該基板上方；及 複數個第二導體，其在該基板上方，其中該等複數個第一導體及該等複數個該等第二導體實質上處於同一層級，且該等第二導體之寬度大於該等第一導體之寬度。
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