TW201911744A - Crystal unit and manufacturing method thereof - Google Patents
Crystal unit and manufacturing method thereof Download PDFInfo
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- TW201911744A TW201911744A TW107127440A TW107127440A TW201911744A TW 201911744 A TW201911744 A TW 201911744A TW 107127440 A TW107127440 A TW 107127440A TW 107127440 A TW107127440 A TW 107127440A TW 201911744 A TW201911744 A TW 201911744A
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- 239000013078 crystal Substances 0.000 title claims abstract description 205
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 235000012431 wafers Nutrition 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 23
- 238000001039 wet etching Methods 0.000 claims description 10
- 230000000994 depressogenic effect Effects 0.000 abstract 8
- 238000000034 method Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 14
- 230000005284 excitation Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/177—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of the energy-trap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
- H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0014—Structural aspects of oscillators
- H03B2200/0018—Structural aspects of oscillators relating to the cutting angle of a crystal, e.g. AT cut quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
本發明是有關於一種使用AT切割晶體片的晶體振子及其製造方法。The present invention relates to a crystal oscillator using an AT-cut crystal piece and a method of manufacturing the same.
隨著AT切割晶體振子（AT-cut crystal unit）的小型化發展，在利用機械式加工的製造方法中，晶體振子（crystal unit）用的晶體片（crystal element）的製造變得困難。因此，已開發出利用光刻（photolithography）技術及濕式蝕刻（wet etching）技術來製造的AT切割晶體片（AT-cut crystal element）。With the miniaturization of the AT-cut crystal unit, in the manufacturing method using mechanical processing, the manufacture of a crystal element for a crystal unit becomes difficult. Therefore, an AT-cut crystal element manufactured by a photolithography technique and a wet etching technique has been developed.
例如在專利文獻1中，公開了一種使用通過所述技術而製造的AT切割晶體片的晶體振子。具體來說，在專利文獻1的段落0053及圖6中，公開了一種與晶體的X軸交叉的側面（X面）之中，+X側的側面由六個面構成，-X側的側面由兩個面構成，並且使所述晶體振子的一部分為厚壁部（台面（mesa）狀）的晶體振子。據說根據所述晶體振子，可以實現晶體阻抗（crystal impedance，CI）值低，頻率溫度特性經改善的晶體振子（專利文獻1的段落0008）。 [現有技術文獻] [專利文獻]For example, in Patent Document 1, a crystal resonator using an AT-cut crystal piece manufactured by the above technique is disclosed. Specifically, in paragraphs 0053 and 6 of Patent Document 1, among the side faces (X faces) that intersect the X axis of the crystal, the side faces on the +X side are composed of six faces, and the side faces on the -X side. It is composed of two faces, and a part of the crystal oscillator is a crystal resonator of a thick wall portion (mesa shape). According to the crystal resonator, it is said that a crystal oscillator having a low crystal impedance (CI) value and improved frequency-temperature characteristics can be realized (paragraph 0008 of Patent Document 1). [Prior Art Document] [Patent Literature]
專利文獻1：日本專利特開2014-27505號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2014-27505
[發明所要解決的問題] 專利文獻1的晶體振子是包括厚壁部、與所述厚壁部連接的傾斜部、及與所述傾斜部連接的薄壁部的台面構造的晶體振子。傾斜部有+X側的傾斜部（專利文獻1的圖6（b）的結晶面133）及-X側的傾斜部（所述圖6（b）的傾斜面23）兩個。 而且，+X側的傾斜部的傾斜面與厚壁部的主面的法線所成的角度記載為約27°（專利文獻1的段落57第4行～第5行）。因此，+X側的傾斜部朝向薄壁部以約63°的角度傾斜。並且，-X側的傾斜部的結晶面與厚壁部的主面的法線所成的角度記載為約55°（專利文獻1的段落55第2行～第3行）。因此，-X側的傾斜部朝向薄壁部以約35°的角度傾斜。並且，在專利文獻1的情況，如專利文獻1的圖8所述，使用形成厚壁部的專用的耐蝕刻性掩模（mask）。 針對所述現有技術，期望出現厚壁部與薄壁部的連接部分的其它優選構造。並且，期望出現能夠省略形成厚壁部的專用的耐蝕刻性掩模的製作方法。 本申請是鑒於如上所述的方面而完成的，因此，本申請的目的在於提供一種可使CI改善的具有新型台面構造的晶體振子及適合於其製造的方法。[Problems to be Solved by the Invention] The crystal resonator of Patent Document 1 is a crystal vibrator having a mesa structure including a thick portion, an inclined portion connected to the thick portion, and a thin portion connected to the inclined portion. The inclined portion has two inclined portions on the +X side (the crystal surface 133 of FIG. 6(b) of Patent Document 1) and inclined portions on the -X side (the inclined surface 23 in the above-described FIG. 6(b)). Moreover, the angle formed by the inclined surface of the inclined portion on the +X side and the normal line of the main surface of the thick portion is about 27° (the fourth row to the fifth row of the paragraph 57 of Patent Document 1). Therefore, the inclined portion on the +X side is inclined toward the thin portion at an angle of about 63°. Further, the angle formed by the crystal face of the inclined portion on the -X side and the normal line of the main surface of the thick portion is about 55° (the second row to the third row of the paragraph 55 of Patent Document 1). Therefore, the inclined portion on the -X side is inclined toward the thin portion at an angle of about 35°. Further, in the case of Patent Document 1, as described in FIG. 8 of Patent Document 1, a dedicated etching resist mask for forming a thick portion is used. With regard to the prior art, it is desirable to have other preferred configurations of the connecting portion of the thick portion and the thin portion. Further, it is desirable to produce a method for omitting a dedicated etching resist mask for forming a thick portion. The present application has been made in view of the above aspects, and it is therefore an object of the present invention to provide a crystal resonator having a novel mesa structure which can improve CI and a method suitable for the manufacture thereof.
[解決問題的技術手段] 為了達成所述目的，根據本申請的晶體振子的發明，是如下的晶體振子，其包括平面形狀為長方形狀並且一部分成為厚壁部的AT切割晶體片，所述晶體振子的特徵在於： 所述晶體片中，當觀察在其短邊的中央附近沿長邊方向切割的截面時，從一個短邊側起，依次具備第一端部、第一凹部、所述厚壁部、第二凹部及第二端部， 所述第一凹部是從所述厚壁部以規定角度θa下降至第一端部側然後上升而與所述第一端部連接的凹部， 所述第二凹部是從所述厚壁部以規定角度θb下降至第二端部側然後上升而與所述第二端部連接的凹部。[Means for Solving the Problem] In order to achieve the object, the invention of the crystal oscillator according to the present application is a crystal oscillator including an AT-cut crystal piece having a rectangular shape in plan view and a part of which is a thick portion, the crystal The vibrator is characterized in that, in the crystal piece, when a cross section cut along the longitudinal direction near the center of the short side is observed, the first end portion, the first concave portion, and the thick portion are sequentially provided from one short side a wall portion, a second recess portion, and a second end portion, wherein the first recess portion is a recess portion that is lowered from the thick portion at a predetermined angle θa to the first end portion side and then rises to be connected to the first end portion. The second recessed portion is a recessed portion that is lowered from the thick portion at a predetermined angle θb to the second end portion side and then rises to be connected to the second end portion.
並且，根據本申請的晶體振子的製造方法的發明，其特徵在於：晶體振子包括平面形狀為長方形狀並且一部分成為厚壁部的AT切割晶體片，當對所述晶體片觀察在其短邊的中央附近沿長邊方向切割的截面時，從一個短邊側起，依次具備第一端部、第一凹部、所述厚壁部、第二凹部及第二端部，所述第一凹部是從所述厚壁部以規定角度θa下降至第一端部側然後上升而與所述第一端部連接的凹部，所述第二凹部是從所述厚壁部以規定角度θb下降至第二端部側然後上升而與所述第二端部連接的凹部，當製造所述晶體振子時，包括如下的工序： 準備用於製造多個所述晶體片的晶體晶片； 在所述晶體晶片的表面與背面上，形成耐濕式蝕刻性掩模，所述耐濕式蝕刻性掩模是用於形成所述晶體片的外形，並且在與所述第一凹部及第二凹部分別相對應的一部分區域內形成具有開口的耐濕式蝕刻性掩模，所述開口不貫通所述晶體晶片，但是可以使濕式蝕刻液滲入至能夠對所述晶體晶片進行所需量蝕刻的程度；以及 將形成有所述耐濕式蝕刻性掩模的晶體晶片浸漬於濕式蝕刻液中規定時間。 再者，本申請中所謂的晶體振子，還包括一般的晶體振子、與振盪電路一同封裝在封裝體內而構成晶體振盪器的晶體振子、及帶有熱敏電阻（thermistor）或PN二極管等各種溫度傳感器的晶體振子等。Further, according to the invention of the method for manufacturing a crystal oscillator of the present invention, the crystal oscillator includes an AT-cut crystal piece having a rectangular shape in plan view and a part of which is a thick-walled portion, and the thin crystal piece is observed on the short side thereof. a cross section cut along the longitudinal direction near the center, and a first end portion, a first recess portion, the thick portion, the second recess portion, and the second end portion are sequentially provided from one short side, the first recess portion being a concave portion that is lowered from the thick portion at a predetermined angle θa to the first end side and then rises to be connected to the first end portion, and the second concave portion is lowered from the thick portion at a predetermined angle θb to the first portion a recess that is then raised to the second end portion and connected to the second end portion, when the crystal oscillator is manufactured, includes the steps of: preparing a crystal wafer for manufacturing a plurality of the crystal wafers; Forming a moisture-resistant etch mask on the surface and the back surface, the moisture-resistant etch mask is used to form an outer shape of the crystal piece, and corresponding to the first concave portion and the second concave portion, respectively Part of the area Forming a moisture resistant etch mask having an opening that does not penetrate the crystal wafer, but may allow the wet etchant to penetrate to the extent that the crystal wafer can be etched by a desired amount; The crystal wafer of the moisture-resistant etch mask is immersed in a wet etching solution for a predetermined period of time. Furthermore, the crystal oscillator according to the present application includes a general crystal oscillator, a crystal oscillator which is enclosed in a package together with an oscillation circuit to constitute a crystal oscillator, and various temperatures such as a thermistor or a PN diode. The crystal oscillator of the sensor, etc.
[發明的效果] 根據本發明的晶體振子，可獲得在從厚壁部沿晶體片的長邊方向的兩側，分別具有凹部的晶體振子。由於是凹部，所以可獲得晶體片的厚度從厚壁部向晶體片的端部一下變薄然後變厚的新型的台面構造。可認為這種台面構造與單純的台面構造相比，可以更好地將振動封入至厚壁部。因此，可認為能夠使晶體振子的特性改善。 並且，根據本發明的晶體振子的製造方法，通過在晶體片的外形加工用的掩模上設置規定的開口，可以在晶體片的外形加工時同時進行第一凹部及第二凹部的加工。因此，可以不使用厚壁部形成用的專用的掩模，而形成具有所需要的厚壁部的晶體振子。[Effects of the Invention] According to the crystal resonator of the present invention, crystal oscillators each having a concave portion on both sides in the longitudinal direction of the crystal piece from the thick portion can be obtained. Since it is a recessed part, a novel mesa structure in which the thickness of the crystal piece is thinned from the thick portion to the end portion of the crystal piece and then thickened can be obtained. It is considered that such a mesa structure can better seal the vibration to the thick portion as compared with a simple mesa structure. Therefore, it can be considered that the characteristics of the crystal oscillator can be improved. Further, according to the method for manufacturing a crystal resonator of the present invention, by providing a predetermined opening in the mask for the outer shape processing of the crystal piece, the processing of the first concave portion and the second concave portion can be simultaneously performed during the outer shape processing of the crystal piece. Therefore, it is possible to form a crystal resonator having a required thick portion without using a dedicated mask for forming a thick portion.
以下，參照附圖對本發明的晶體振子及晶體振子的製造方法的實施方式進行說明。再者，用於說明的各圖只是概略性地表示至能夠理解這些發明的程度。並且，在用於說明的各圖中，對同樣的構成成分標注相同的編號來表示，還存在省略其說明的情況。並且，在以下的說明中所述的形狀、尺寸、材質等只是本發明的範圍內的優選例。因此，本發明並不只限定於以下的實施方式。Hereinafter, embodiments of a method of manufacturing a crystal resonator and a crystal resonator of the present invention will be described with reference to the drawings. Furthermore, the drawings for the description are only schematically shown to the extent that the invention can be understood. In the respective drawings for explanation, the same components are denoted by the same reference numerals, and the description thereof will be omitted. Further, the shapes, dimensions, materials, and the like described in the following description are merely preferred examples within the scope of the invention. Therefore, the present invention is not limited to the following embodiments.
1.晶體振子的說明 1-1.構造 首先，參照圖1中的（A）～圖1中的（C）、圖2（A）及圖2（B），對實施方式的晶體振子所具有的AT切割晶體片10進行說明。再者，圖1中的（A）是晶體片10的俯視圖，圖1中的（B）是沿圖1中的（A）中的P-P線的晶體片10的截面圖，圖1中的（C）是沿圖1中的（A）中的Q-Q線的晶體片10的截面圖。再者，在圖1中的（B）中，為了使作為本發明的特徵的第一端部10a、第一凹部10b、第二凹部10c及第二端部10d易於理解，將這些部分加以放大表示，並且由於圖紙的關係，對厚壁部10e省略沿晶體片10的長邊方向的區域的一部分來表示。並且，圖2（A）是圖1中的（C）的放大圖，圖2（B）是放大表示圖2（A）中的N部分的圖。1. Description of Crystal Oscillator 1-1. Structure First, referring to (A) in FIG. 1 (C), FIG. 2 (A), and FIG. 2 (B), the crystal oscillator of the embodiment has The AT-cut crystal piece 10 will be described. Further, (A) in Fig. 1 is a plan view of the crystal piece 10, and (B) in Fig. 1 is a cross-sectional view of the crystal piece 10 along the PP line in (A) of Fig. 1, in Fig. 1 ( C) is a cross-sectional view of the crystal piece 10 along the QQ line in (A) of Fig. 1. Furthermore, in (B) of FIG. 1, in order to make the first end portion 10a, the first recess portion 10b, the second recess portion 10c, and the second end portion 10d which are features of the present invention easy to understand, these portions are enlarged. It is shown that the thick portion 10e is omitted from the portion along the longitudinal direction of the crystal piece 10 due to the relationship of the drawings. 2(A) is an enlarged view of (C) of FIG. 1, and FIG. 2(B) is an enlarged view of a portion N of FIG. 2(A).
並且，圖1中的（A）中所示的坐標軸X、Y'、Z'分別表示AT切割晶體片10中的晶體的晶軸。再者，關於AT切割晶體片自身的詳細情況，例如已記載在文獻《晶體裝置的解說及應用》日本晶體裝置工業會2002年3月第4版第7頁等之中，所以在這裡省略其說明。Further, the coordinate axes X, Y', and Z' shown in (A) of FIG. 1 respectively indicate the crystal axes of the crystals in the AT-cut crystal piece 10. In addition, the details of the AT-cut crystal piece itself are described, for example, in the document "Explanation and Application of Crystal Devices", Japanese Crystal Device Industry Association, March 2002, 4th edition, page 7, etc., so the description thereof is omitted here. Description.
本實施方式的晶體片10是平面形狀為長方形狀，使一部分為厚壁部10e，由規定的方向角的晶體片形成，其長邊與晶體的X軸平行，其短邊與晶體的Z'軸平行的AT切割的晶體片。 而且，所述晶體片10中，當觀察在其短邊的中央附近沿長邊方向切割的截面（即沿P-P切割的截面）時，從一個短邊側（在圖1的示例的情況，+X側短邊）起，依次具備第一端部10a、第一凹部10b、所述厚壁部10e、第二凹部10c及第二端部10d。 而且，特別是如圖1中的（B）所示，第一凹部10b是從厚壁部10e以規定角度θa下降至第一端部10a側然後上升，進而在本例的情況是稍微下降並且上升而與第一端部10a連接的凹部。 並且，第二凹部10c是從厚壁部10e以規定角度θb下降至第二端部10d側然後以緩於θb的角度下降後上升而與第二端部10d連接的凹部。 在這裡，角度θa是厚壁部10e的主面與第一凹部10b的厚壁部102e側的斜面所成的角度，具體來說是4°～8°，典型的是約6°。並且，角度θb是厚壁部10e的主面與第二凹部10c的厚壁部102e側的斜面所成的角度，具體來說是14°～18°，典型的是約16°。這些角度θa、角度θb顯示出稍許偏差，根據本申請的發明者的迄今為止的實驗得知，如上所述，角度θa表示6°±2°，角度θb表示16°±2°。 並且，如圖1中的（B）所示，第一端部10a由四個面構成，形成為朝向+X方向具有凸狀的形狀的構造，並且，第二端部10d由四個面構成，形成為朝向-X方向具有凸狀的形狀的構造。The crystal piece 10 of the present embodiment has a rectangular shape in plan view, and a part of the thick portion 10e is formed of a crystal piece having a predetermined direction angle, and the long side thereof is parallel to the X axis of the crystal, and the short side thereof and the Z' of the crystal. A parallel-cut AT-cut crystal piece. Further, in the crystal piece 10, when a section cut along the longitudinal direction near the center of the short side (i.e., a section cut along the PP) is observed, from one short side (in the case of the example of Fig. 1, + The X side short side is provided with a first end portion 10a, a first recess portion 10b, the thick portion 10e, the second recess portion 10c, and the second end portion 10d in this order. Further, in particular, as shown in FIG. 1(B), the first concave portion 10b is lowered from the thick portion 10e at a predetermined angle θa to the first end portion 10a side and then raised, and in the case of this example, is slightly lowered and A recess that rises and is connected to the first end portion 10a. In addition, the second recessed portion 10c is a recessed portion which is lowered from the thick portion 10e at a predetermined angle θb to the second end portion 10d side and then lowered at an angle lower than θb and then connected to the second end portion 10d. Here, the angle θa is an angle formed by the main surface of the thick portion 10e and the inclined surface on the thick portion 102e side of the first recess 10b, specifically, 4 to 8 degrees, and typically about 6 degrees. Further, the angle θb is an angle formed by the main surface of the thick portion 10e and the inclined surface on the thick portion 102e side of the second recess 10c, specifically, 14 to 18 degrees, and typically about 16 degrees. These angles θa and θb show slight deviations. According to the experiments of the inventors of the present application, as described above, the angle θa represents 6°±2°, and the angle θb represents 16°±2°. Further, as shown in FIG. 1(B), the first end portion 10a is constituted by four faces, and is formed to have a convex shape in the +X direction, and the second end portion 10d is constituted by four faces. It is formed into a structure having a convex shape toward the −X direction.
在這裡，晶體片10的長邊尺寸及短邊尺寸、以及第一端部10a、第一凹部10b、第二凹部10c、第二端部10d及厚壁部10e各自的沿晶體片10的長邊方向的尺寸可以根據晶體振子所要求的規格設為任意的尺寸。 在本實施方式的晶體片10的情況，第一端部10a、第一凹部10b、第二凹部10c及第二端部10d各自的沿晶體片10的長邊方向的尺寸依照以上的所述順序來說，設為約50 μm、約180 μm、約80 μm、約40 μm。因此，第一凹部10b的尺寸長達第二凹部10c的尺寸的兩倍以上。Here, the long side dimension and the short side dimension of the crystal piece 10, and the length of each of the first end portion 10a, the first recessed portion 10b, the second recessed portion 10c, the second end portion 10d, and the thick portion 10e along the crystal piece 10 The size in the side direction can be set to any size according to the specifications required for the crystal oscillator. In the case of the crystal piece 10 of the present embodiment, the dimensions of the first end portion 10a, the first recess portion 10b, the second recess portion 10c, and the second end portion 10d in the longitudinal direction of the crystal piece 10 are in accordance with the above order. For example, it is set to be about 50 μm, about 180 μm, about 80 μm, and about 40 μm. Therefore, the size of the first recess 10b is longer than twice the size of the second recess 10c.
並且，在所述晶體片10的情況，與其Z'軸交叉的側面（Z'面）分別特別地如圖2（B）所示，設為由第一面10f、第二面10g及第三面10h這三個面構成的側面。而且，第一面10f是與所述晶體片10的主面10i相交的面，而且，是相當於使主面10i以晶體的X軸為旋轉軸旋轉θ1而成的面的面。Further, in the case of the crystal piece 10, the side surface (Z' plane) intersecting with the Z' axis is specifically made of the first surface 10f, the second surface 10g, and the third, as shown in Fig. 2(B). The side of the face 10h is composed of three faces. Further, the first surface 10f is a surface that intersects the principal surface 10i of the crystal piece 10, and is a surface corresponding to a surface in which the principal surface 10i is rotated by θ1 with the X axis of the crystal as a rotation axis.
此外，在所述晶體片10中，第一面10f、第二面10g及第三面10h依此順序相交。而且，第二面10g是相當於使主面10i以晶體的X軸為旋轉軸旋轉θ2而成的面的面，第三面10h是使主面10i以晶體的X軸為旋轉軸旋轉θ3而成的面的面。從本申請人的實驗得知，這些角度θ1、角度θ2、角度θ3優選如下。θ1＝4°±3.5°，θ2＝-57°±5°，θ3＝-42°±5°，更優選的是θ1＝4°±3°，θ2＝-57°±3°，θ3＝-42°±3°。再者，關於θ1～θ3，已記載於本申請人的日本專利特開2016-197778號公報之中，所以在這裡省略其說明。 當如上所述由規定的三個面構成與Z'軸交叉的側面（Z'面）時，可以使短邊方向上的多餘振動得到抑制，從而優選。Further, in the crystal piece 10, the first surface 10f, the second surface 10g, and the third surface 10h intersect in this order. Further, the second surface 10g is a surface corresponding to a surface obtained by rotating the main surface 10i by the θ2 of the crystal X axis, and the third surface 10h is such that the main surface 10i is rotated by θ3 with the X axis of the crystal as a rotation axis. The face of the face. It is known from the applicant's experiment that these angles θ1, θ2, and θ3 are preferably as follows. Θ1=4°±3.5°, θ2=-57°±5°, θ3=-42°±5°, more preferably θ1=4°±3°, θ2=-57°±3°, θ3=- 42 ° ± 3 °. In addition, θ1 to θ3 are described in Japanese Laid-Open Patent Publication No. 2016-197778, the entire disclosure of which is hereby incorporated herein. When the side surface (Z' plane) intersecting the Z' axis is formed by the predetermined three surfaces as described above, it is preferable to suppress excessive vibration in the short side direction.
並且，所述晶體片10在厚壁部10e的表面與背面上，或者在包含所述厚壁部10e的表面與背面的更寬的規定區域內，具備激勵用電極11，進而具備從所述激勵用電極11引出至晶體片10的一個短邊側的引出電極13。激勵用電極11及引出電極13分別典型的是可以由鉻及金的層疊膜構成。 通過將如上所述形成的晶體片10如圖3所示，例如在眾所周知的陶瓷封裝體15內，例如利用矽酮系的導電性黏接劑17封裝在引出電極13的位置，然後，利用規定的蓋構件（未圖示）對所述陶瓷封裝體以真空密封或惰性氣體環境等的密封狀態進行密封，可以構成實施方式的晶體振子。再者，如果對晶體片10的固定位置進行詳細描述，則晶體片10在其第一端部10a附近，通過導電性黏接劑17而固定在陶瓷封裝體15的黏接墊15a上。Further, the crystal piece 10 includes the excitation electrode 11 on the front surface and the back surface of the thick portion 10e or in a wider predetermined region including the surface and the back surface of the thick portion 10e, and further includes the above-described excitation electrode 11 The excitation electrode 11 is taken out to the extraction electrode 13 on one short side of the crystal piece 10. Each of the excitation electrode 11 and the extraction electrode 13 is typically composed of a laminated film of chromium and gold. By forming the crystal piece 10 formed as described above, for example, in the well-known ceramic package 15, for example, the position of the extraction electrode 13 is encapsulated by the fluorenone-based conductive adhesive 17, and then the regulation is used. The cover member (not shown) seals the ceramic package in a sealed state such as a vacuum seal or an inert gas atmosphere, and can constitute the crystal resonator of the embodiment. Further, if the fixing position of the crystal piece 10 is described in detail, the crystal piece 10 is fixed to the bonding pad 15a of the ceramic package 15 by the conductive adhesive 17 in the vicinity of the first end portion 10a.
1-2.實驗結果 試製多個所述晶體片10，即，已將振盪頻率設為規定頻率的晶體片10。然後，利用這些晶體片10形成所述封裝構造及密封構造的實施例晶體振子。 另一方面，作為比較例的晶體片20，試製多個如下構造的晶體片20：如圖4中以與圖1中的（B）同樣的截面圖所示，未設置在實施例中所設置的第一凹部10b、第二凹部10c。然後，利用這些晶體片20形成所述封裝構造及密封構造的比較例的晶體振子。1-2. Experimental Results A plurality of the crystal pieces 10 were produced, that is, the crystal piece 10 having the oscillation frequency set to a predetermined frequency. Then, the crystal oscillator of the embodiment of the package structure and the sealing structure is formed using these crystal pieces 10. On the other hand, as the crystal piece 20 of the comparative example, a plurality of crystal pieces 20 having the following structures were experimentally produced: as shown in the same cross-sectional view as (B) of FIG. 1 in FIG. 4, which was not provided in the embodiment. The first recess 10b and the second recess 10c. Then, the crystal resonator of the comparative example of the package structure and the sealing structure is formed by these crystal pieces 20.
其次，對各40個所述實施例及比較例的晶體振子，分別測定-40℃～+100℃的溫度範圍內的頻率溫度特性及CI（晶體阻抗）溫度特性。在這裡，所謂CI溫度特性，是指表示相對於測定溫度的CI的變動情況的特性，相對於溫度的CI變動越小，作為晶體振子的特性越好。並且，除CI溫度特性以外，CI自身也是越小，作為晶體振子的特性越好。 因此，為了判斷本發明的構造的好壞，首先，將實施例及比較例各自的各40個晶體振子的25℃的溫度下的CI的平均值及標準偏差σ示於表1。再者，在表1中，將實施例的晶體振子中的結果表示為1.00，並以此為基準利用經標準化的值來表示比較例的值。從表1可知，相對於實施例，比較例以平均值計差1.23倍，以標準偏差σ計差1.76倍，因此實施例的構造優異。 表1：25℃下的CI比較
其次，針對CI的溫度特性中的CI的變動量ΔCI，比較實施例及比較例的結果。再者，圖5是用來加深所述CI的變動量ΔCI的理解的說明圖。在實施例及比較例的共計80個晶體振子的各自的溫度特性中，分別求出CI的最大值CImax與CI的最小值CImin的差的絕對值作為CI的變動量ΔCI。而且，將實施例及比較例的各40個的CI的變動量ΔCI的平均值及標準偏差σ示於表2。從表2可知，相對於實施例，比較例以平均值計差2.00倍，以標準偏差σ計差1.26倍，因此實施例的構造優異。 表2：CI溫度特性中的ΔCI比較
2.製造方法的說明 其次，參照圖6（A）～圖6（C）至圖8（A）～圖8（C），對晶體振子的製造方法的實施方式進行說明。 實施方式的晶體片10可以利用光刻技術及濕式蝕刻技術從晶體晶片（quartz-crystal wafer）中製造多個。因此，在以下的製作方法例的說明中所使用的圖的一部分圖中，表示了晶體晶片10w的俯視圖及將其一部分M加以放大的俯視圖。此外，在製作方法例的說明中所使用的圖的一部分圖中也同時使用了晶體片10的截面圖。所有截面圖都表示了相對應的俯視圖中的沿R-R線或S-S線的截面。2. Description of Manufacturing Method Next, an embodiment of a method of manufacturing a crystal resonator will be described with reference to FIGS. 6(A) to 6(C) to 8(A) to 8(C). The crystal piece 10 of the embodiment can be fabricated from a quartz-crystal wafer by a photolithography technique and a wet etching technique. Therefore, a part of the drawings used in the description of the production method examples below shows a plan view of the crystal wafer 10w and a plan view in which a part of the M is enlarged. Further, a cross-sectional view of the crystal piece 10 is also used in a part of the drawings used in the description of the production method example. All cross-sectional views show the cross-section along the R-R line or the S-S line in the corresponding top view.
首先，準備晶體晶片10w（圖6（A））。AT切割晶體片10的振盪頻率如眾所周知，大致取決於晶體片10的主面（X-Z'面）部分的厚度，所準備的晶體晶片10w設為大於最終的晶體片10的厚度的晶片。First, the crystal wafer 10w is prepared (Fig. 6(A)). The oscillation frequency of the AT-cut crystal piece 10 is, as is well known, roughly depending on the thickness of the main surface (X-Z' plane) portion of the crystal piece 10, and the prepared crystal wafer 10w is set to a wafer larger than the thickness of the final crystal piece 10.
其次，在所述晶體晶片10w的表面與背面兩面上，利用眾所周知的成膜技術及光刻技術，形成用於形成晶體片的外形的耐濕式蝕刻性掩模40。本實施方式的情況的耐濕式蝕刻性掩模40是設為包括與晶體片的外形相對應的部分、保持各晶體片的框架部分、及將晶體片與框架部分加以連結的連結部。但是，在本發明中，是在與所述第一凹部及第二凹部分別相對應的一部分區域內，形成具有開口40a的耐濕式蝕刻性掩模，所述開口40a不貫通晶體晶片，但是可以使濕式蝕刻液滲入至可對晶體晶片進行所需量蝕刻的程度。具體來說，例如，形成由鉻膜與金膜的層疊膜構成的耐濕式蝕刻性掩模40，即，形成對所述規定部分去除所述金屬膜而設為開口40a的耐濕式蝕刻性掩模40。Next, on the front and back surfaces of the crystal wafer 10w, a moisture-resistant etching mask 40 for forming an outer shape of the crystal piece is formed by a well-known film formation technique and photolithography technique. The moisture-resistant etching mask 40 in the case of the present embodiment is a portion including a portion corresponding to the outer shape of the crystal piece, a frame portion for holding each crystal piece, and a connecting portion for connecting the crystal piece to the frame portion. However, in the present invention, a moisture-resistant etching mask having an opening 40a is formed in a partial region corresponding to each of the first concave portion and the second concave portion, and the opening 40a does not penetrate the crystal wafer, but the opening 40a does not penetrate the crystal wafer, but The wet etchant can be allowed to penetrate to the extent that the crystal wafer can be etched to the desired amount. Specifically, for example, a moisture-resistant etching mask 40 composed of a laminated film of a chromium film and a gold film, that is, a wet etching method in which the metal film is removed to the predetermined portion and the opening 40a is formed is formed. Sex mask 40.
所述開口40a的沿晶體片10的厚度方向的尺寸如上所述，是不貫通晶體晶片，但可使濕式蝕刻液滲入至可對晶體晶片進行所需量蝕刻的程度的尺寸，典型的是數μm，例如2 μm。但是，所述值可以根據晶體晶片10w的厚度、第一凹部或第二凹部的深度及寬度等而變更。並且，所述開口40a的沿晶體片10的短邊方向的尺寸優選的是設為與晶體片的寬度尺寸相同程度的尺寸。但是，所述尺寸也可以根據晶體晶片10w的厚度、第一凹部或第二凹部的寬度，變寬或變窄。並且，在圖6（A）～圖6（C）的示例中，開口40a的數量是在晶體片的兩端區域各設為一個，但是並不限定於此，也可以設置多個，還可以在其中一個區域內設置一個，在另一個區域內設置多個。並且，在圖6（A）～圖6（C）的示例中，是將開口40a的平面形狀設為極細長的長方形狀，但是也可以變更所述形狀。The dimension of the opening 40a in the thickness direction of the crystal piece 10 is, as described above, a size that does not penetrate the crystal wafer, but allows the wet etching solution to penetrate to the extent that the crystal wafer can be etched by a desired amount, typically A few μm, for example 2 μm. However, the value may be changed depending on the thickness of the crystal wafer 10w, the depth and width of the first recess or the second recess, and the like. Further, the dimension of the opening 40a in the short-side direction of the crystal piece 10 is preferably set to be the same size as the width dimension of the crystal piece. However, the size may also be widened or narrowed depending on the thickness of the crystal wafer 10w, the width of the first recess or the second recess. Further, in the examples of FIGS. 6(A) to 6(C), the number of the openings 40a is one at each of the end regions of the crystal piece, but the number of the openings 40a is not limited thereto, and a plurality of the openings 40a may be provided. Set one in one area and multiple in one area. Further, in the examples of FIGS. 6(A) to 6(C), the planar shape of the opening 40a is an extremely elongated rectangular shape, but the shape may be changed.
其次，將形成有耐濕式蝕刻性掩模40的晶體晶片10w浸漬於濕式蝕刻液中規定時間。作為蝕刻液，是使用氫氟酸系蝕刻劑（etchant）。所謂規定時間，是指蝕刻液能夠貫通晶體晶片10w以獲得晶體片10的外形輪廓的時間＋α的時間。 在所述蝕刻中，在晶體晶片10w的晶體片10的形成預定區域的周圍的開口，蝕刻液良好地滲入擴散，因此蝕刻推進而充分貫通晶體晶片10w自身。另一方面，開口40a的部分的開口尺寸狹窄，所以濕式蝕刻液是一點點地滲入至開口40a下的晶體晶片10w部分，所以對開口40a的區域及其周圍的掩模下的晶體晶片10w部分進行蝕刻，而不會到貫通晶體晶片10w的程度。 圖7（A）～圖7（C）是表示已結束所述外形蝕刻的試樣的樣子的圖，是表示已去除耐濕式蝕刻性掩模40之中的框架部分以外的部分的狀態的圖。獲得了具有第一端部10a、第一凹部10b、厚壁部10e、第二凹部10c、第二端部10d各自的完成前的中間體的狀態的晶體晶片10w。Next, the crystal wafer 10w on which the moisture-resistant etching mask 40 is formed is immersed in the wet etching liquid for a predetermined period of time. As the etching liquid, a hydrofluoric acid type etchant is used. The predetermined time means the time when the etching liquid can pass through the crystal wafer 10w to obtain the outline of the crystal piece 10 + time. In the etching, the etching liquid penetrates well in the opening around the predetermined region where the crystal piece 10 of the crystal wafer 10w is formed. Therefore, the etching progresses and the crystal wafer 10w itself is sufficiently penetrated. On the other hand, the opening size of the portion of the opening 40a is narrow, so that the wet etching liquid penetrates a little into the portion of the crystal wafer 10w under the opening 40a, so the area of the opening 40a and the crystal wafer 10w under the mask therearound. Part of the etching is performed without going through the crystal wafer 10w. (A) to (C) of FIG. 7 are views showing a state in which the sample having the outer shape etching is completed, and a state in which a portion other than the frame portion of the moisture-resistant etching mask 40 has been removed. Figure. The crystal wafer 10w having the state of the intermediate body before completion of each of the first end portion 10a, the first recess portion 10b, the thick portion 10e, the second recess portion 10c, and the second end portion 10d is obtained.
其次，將所述中間體狀態的晶體晶片10w，再次浸漬於以氫氟酸為主的蝕刻液中規定的時間。在這裡，所謂規定的時間，是指晶體片10的厚壁部10e形成預定區域的厚度能夠滿足所述晶體片10所要求的振盪頻率的規格，並且，可以在與晶體片10的Z'軸交叉的側面上形成第一面10f～第三面10h的時間。當所述蝕刻完成後，如圖8（A）～圖8（C）所示，製作完成包括第一端部10a、第一凹部10b、厚壁部10e、第二凹部10c及第二端部10d的晶體片10的主要部分。Next, the crystal wafer 10w in the intermediate state is immersed again in a hydrofluoric acid-based etching solution for a predetermined period of time. Here, the predetermined time means that the thickness of the thick portion 10e of the crystal piece 10 is formed to a predetermined region to satisfy the oscillation frequency required for the crystal piece 10, and may be in the Z' axis with the crystal piece 10. The time from the first surface 10f to the third surface 10h is formed on the intersecting side faces. After the etching is completed, as shown in FIGS. 8(A) to 8(C), the fabrication includes the first end portion 10a, the first recess portion 10b, the thick portion 10e, the second recess portion 10c, and the second end portion. The main part of the 10d crystal piece 10.
其次，從所述蝕刻已結束的晶體晶片10w中，還去除耐濕式蝕刻性掩模40的殘留部分，而露出整個晶體面（未圖示）。然後，在所述晶體晶片的整個面上，利用眾所周知的成膜方法，形成晶體振子的激勵用電極及引出電極形成用的金屬膜（未圖示）。其次，利用眾所周知的光刻技術及金屬蝕刻（metal etching）技術，對所述金屬膜進行加工，從而製作完成具有多個圖1所示的晶體片10的晶體晶片10w。Next, from the crystal wafer 10w in which the etching has been completed, the remaining portion of the moisture-resistant etching mask 40 is also removed, and the entire crystal surface (not shown) is exposed. Then, on the entire surface of the crystal wafer, a excitation electrode for a crystal resonator and a metal film for forming an extraction electrode (not shown) are formed by a well-known film formation method. Next, the metal film is processed by a well-known photolithography technique and a metal etching technique to fabricate a crystal wafer 10w having a plurality of crystal wafers 10 shown in FIG.
其次，對晶體晶片10w的各晶體片10的連結部施加適當的外力，使晶體片10從晶體晶片10w分離，而單片化。通過將這樣形成的晶體片如上所述封裝至容器中，並進行密封，可以獲得如圖3所示的實施方式的晶體振子。 在所述製造方法中，在耐濕式蝕刻性掩模40上設置規定的開口40a而進行外形蝕刻，所以在外形蝕刻時也可以同時形成台面構造。因此，可以不使用台面構造形成用的專用掩模而形成新型的台面構造。Next, an appropriate external force is applied to the connection portion of each crystal piece 10 of the crystal wafer 10w, and the crystal piece 10 is separated from the crystal wafer 10w to be singulated. By encapsulating the thus formed crystal piece into a container as described above and sealing it, a crystal resonator of the embodiment shown in Fig. 3 can be obtained. In the above-described manufacturing method, since the predetermined opening 40a is provided in the moisture-resistant etching mask 40 and the outer shape is etched, the mesa structure can be simultaneously formed during the outer shape etching. Therefore, it is possible to form a novel mesa structure without using a dedicated mask for forming a mesa structure.
10‧‧‧實施方式的晶體片（晶體片）10‧‧‧The crystal piece of the embodiment (crystal piece)
10a‧‧‧第一端部10a‧‧‧First end
10b‧‧‧第一凹部10b‧‧‧First recess
10c‧‧‧第二凹部10c‧‧‧second recess
10d‧‧‧第二端部10d‧‧‧second end
10e‧‧‧厚壁部10e‧‧‧ thick wall
10f‧‧‧第一面10f‧‧‧ first side
10g‧‧‧第二面10g‧‧‧ second side
10h‧‧‧第三面10h‧‧‧ third side
10i‧‧‧主面10i‧‧‧ main face
10w‧‧‧晶體晶片10w‧‧‧crystal wafer
11‧‧‧激勵用電極11‧‧‧Excitation electrode
13‧‧‧引出電極13‧‧‧Extraction electrode
15‧‧‧陶瓷封裝體15‧‧‧Ceramic package
15a‧‧‧黏接墊15a‧‧‧bonding pad
17‧‧‧導電性黏接劑17‧‧‧ Conductive adhesive
20‧‧‧比較例的晶體片（晶體片）20‧‧‧Compact crystal piece (crystal piece)
40‧‧‧耐濕式蝕刻性掩模（掩模）40‧‧‧Heat-resistant etch mask (mask)
40a‧‧‧開口40a‧‧‧ openings
CImax‧‧‧CI的最大值Maximum value of CImax‧‧‧CI
CImin‧‧‧CI的最小值Minimum value of CImin‧‧‧CI
M‧‧‧晶體晶片的一部分Part of the M‧‧‧ crystal wafer
N‧‧‧部分Part N‧‧‧
P、Q、R、S‧‧‧線P, Q, R, S‧‧‧ lines
X、Y'、Z'‧‧‧晶體的晶軸Crystal axis of X, Y', Z'‧‧‧ crystal
θa、θb‧‧‧規定角度Θa, θb‧‧‧ specified angle
θ1、θ2、θ3‧‧‧角度Θ1, θ2, θ3‧‧‧ angle
ΔCI‧‧‧CI的變動量Variation of ΔCI‧‧‧CI
圖1中的（A）～圖1中的（C）是實施方式的晶體振子所具有的AT切割晶體片10的說明圖。 圖2（A）、圖2（B）是晶體片10的特別是與Z'軸交叉的側面的說明圖。 圖3是表示將晶體片10封裝於陶瓷封裝體內的狀態的俯視圖。 圖4是比較例的晶體片20的說明圖。 圖5是用於說明實施例及比較例的各試樣的CI特性的補充圖。 圖6（A）、圖6（B）、圖6（C）是晶體片10的製作方法例的說明圖。 圖7（A）、圖7（B）、圖7（C）是接在晶體片10的製作方法例的圖6（A）～圖6（C）之後的說明圖。 圖8（A）、圖8（B）、圖8（C）是接在晶體片10的製作方法例的圖7（A）～圖7（C）之後的說明圖。(A) to (C) of FIG. 1 are explanatory views of the AT-cut crystal piece 10 included in the crystal resonator of the embodiment. 2(A) and 2(B) are explanatory views of the side surface of the crystal piece 10, particularly intersecting the Z' axis. 3 is a plan view showing a state in which the crystal piece 10 is packaged in a ceramic package. 4 is an explanatory view of a crystal piece 20 of a comparative example. Fig. 5 is a supplementary diagram for explaining CI characteristics of each sample of the examples and the comparative examples. 6(A), 6(B), and 6(C) are explanatory views of an example of a method of fabricating the crystal piece 10. 7(A), 7(B), and 7(C) are explanatory views subsequent to Figs. 6(A) to 6(C) of the example of the method of fabricating the crystal piece 10. 8(A), 8(B), and 8(C) are explanatory views after FIG. 7(A) to FIG. 7(C) which are examples of the method of manufacturing the crystal piece 10.
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| JP2017153897A JP6797764B2 (en) | 2017-08-09 | 2017-08-09 | Crystal oscillator and its manufacturing method |
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