JP2017169081A - Quartz resonator and manufacturing method of the same - Google Patents

Quartz resonator and manufacturing method of the same Download PDF

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JP2017169081A
JP2017169081A JP2016053371A JP2016053371A JP2017169081A JP 2017169081 A JP2017169081 A JP 2017169081A JP 2016053371 A JP2016053371 A JP 2016053371A JP 2016053371 A JP2016053371 A JP 2016053371A JP 2017169081 A JP2017169081 A JP 2017169081A
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crystal
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大沢　和彦
Kazuhiko Osawa
和彦 大沢
翔平 武田
Shohei Takeda
翔平 武田
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Nihon Dempa Kogyo Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a structure for adjusting characteristics of a crystal resonator including an AT-cut quartz crystal piece in which the thickness of a central region 11a is a thickness corresponding to the frequency required for the crystal resonator, and the periphery of the central region 11a is a thinner region 11b thinner than the central region.SOLUTION: An end surface shape adjusting portion 11c is provided at least at a part of an end portion of a thin region 11b. The end surface shape adjusting portion 11c is provided at both ends along a crystal axis Z' of a crystal of a quartz piece 11 and along a crystal axis X axis. The thickness of the end face shape adjusting portion 11c is equal to or greater than the thickness of the thin region 11b and equal to or less than the thickness of the central region 11a.SELECTED DRAWING: Figure 1

Description

本発明は、フォトリソグラフィ技術およびウエットエッチング技術を用いて製造される水晶振動子及びその製造方法に関する。   The present invention relates to a crystal resonator manufactured using a photolithography technique and a wet etching technique, and a manufacturing method thereof.

ＡＴカット水晶振動子の小型化が進むに従い、機械式加工による製造方法では、水晶振動子用の水晶片の製造が困難になっている。そのため、フォトリソグラフィ技術及びウエットエッチング技術を用いて製造されるＡＴカット水晶片が開発されている。   As the AT-cut quartz crystal resonator is further miniaturized, it is difficult to manufacture a crystal piece for the quartz resonator by a manufacturing method using mechanical processing. Therefore, an AT-cut crystal piece manufactured using a photolithography technique and a wet etching technique has been developed.

例えば特許文献１、２各々には、上述の技術により製造されたＡＴカット水晶片及び水晶振動子が開示されている。具体的には、特許文献１には、水晶のＸ軸と交差する側面（Ｘ面）が少なくとも４つの面で構成されたＡＴカット水晶片と、それを用いた水晶振動子が開示されている。また、特許文献２には、水晶のＺ′軸と交差する側面（Ｚ′面）が少なくとも４つの面で構成されたＡＴカット水晶片と、それを用いた水晶振動子が開示されている。   For example, each of Patent Documents 1 and 2 discloses an AT-cut crystal piece and a crystal resonator manufactured by the above-described technique. Specifically, Patent Document 1 discloses an AT-cut crystal piece in which a side surface (X surface) intersecting the X axis of crystal is composed of at least four surfaces, and a crystal resonator using the AT cut crystal piece. . Further, Patent Document 2 discloses an AT-cut crystal piece having a side surface (Z ′ surface) intersecting the Z ′ axis of the crystal composed of at least four surfaces, and a crystal resonator using the AT cut crystal piece.

いずれの場合も、水晶基板に外形形成用の耐エッチング性マスクが形成され、この水晶基板のマスクで覆われていない部分がウエットエッチングにより溶解されて、水晶片の大まかな外形が形成される。次に、この水晶基板からマスクが除去された後、この水晶基板がウエットエッチングされる。そのため、この水晶基板に形成される水晶片では、その側面（上記のＸ面やＺ′面）がＸ軸に沿って又はＺ′軸に沿って凸状でかつ４つの面から成る側面となる。このように形成された水晶片によれば、振動漏れが少なく、特性が優れたＡＴカット水晶振動子が実現されるという。   In either case, an etching resistant mask for forming an outer shape is formed on the quartz substrate, and a portion of the quartz substrate not covered with the mask is dissolved by wet etching, so that a rough outer shape of the quartz piece is formed. Next, after the mask is removed from the quartz substrate, the quartz substrate is wet-etched. Therefore, in the crystal piece formed on this crystal substrate, the side surface (the X surface or the Z ′ surface described above) is a side surface that is convex along the X axis or along the Z ′ axis and is composed of four surfaces. . According to the crystal piece formed in this way, an AT-cut crystal resonator with less vibration leakage and excellent characteristics is realized.

特開２０１４−２７５０５号公報JP 2014-27505 A 特開２０１４−２７５０６号公報JP 2014-27506 A

しかしながら、水晶振動子に要求される特性を調整するため、水晶のＺ′軸と交差する側面又は水晶のＸ軸と交差する側面は上記のようにＺ′軸やＸ軸に沿って凸状かつ複数面の側面ではなく、別の形状としたい場合がある。例えば、水晶片の中央領域はその厚みが当該水晶振動子に要求される周波数に応じた厚みとなっていて、この中央領域の周辺は中央領域より厚さが薄い領域になっているいわゆるメサ構造の水晶振動子の場合が、それに該当する。すなわち、メサ構造の水晶振動子の場合、その特性は主として前記中央領域で律速できることが多く、厚さが薄くされた領域の端部の側面は上記のように凸状かつ複数面から成る側面でなく水晶振動子の特性を多少調整できるような任意の形状にしたい場合がある。この出願はこのような点に鑑みなされたものである。   However, in order to adjust the characteristics required for the crystal unit, the side surface intersecting the Z ′ axis of the crystal or the side surface intersecting the X axis of the crystal is convex along the Z ′ axis and the X axis as described above. There are cases where it is desired to use a different shape instead of a plurality of side surfaces. For example, the center region of the crystal piece has a thickness corresponding to the frequency required for the crystal resonator, and the periphery of the center region is a so-called mesa structure in which the thickness is thinner than the center region. This is the case for the quartz crystal resonator. In other words, in the case of a quartz crystal having a mesa structure, the characteristics can often be controlled mainly in the central region, and the side surface of the end of the thinned region is a side surface that is convex and has a plurality of surfaces as described above. In some cases, it may be desired to have an arbitrary shape that can slightly adjust the characteristics of the crystal unit. This application has been made in view of these points.

この目的を達成するため、この出願の水晶振動子の発明によれば、中央領域の厚みが当該水晶振動子に要求される周波数に応じた厚みとなっていて、この中央領域の周辺は前記中央領域より厚さが薄い領域（以下、周辺部領域ともいう）になっているＡＴカット水晶片を含む水晶振動子において、前記周辺部領域の端部の少なくとも一部に端面形状調整部を具えることを特徴とする。
この発明を実施するに当たり、前記端面形状調整部は、ＡＴカット水晶片のＺ′軸に沿った両端であってＸ軸に沿った領域に設けるのが好適である。このようにすると、ＡＴカット水晶片のＺ′軸に沿って生じる振動エネルギーをこの端面形状調整部により調整でき、水晶振動子の特性制御に寄与できるからである。また、この発明を実施するに当たり、前記端面形状調整部は、その厚さが前記周辺部領域の厚さ以上でかつ前記中央領域の厚さ以下の厚みを有したものとするのが良い。より好ましくは、前記端面形状調整部は、その厚さが前記周辺部領域の厚さより厚くかつ前記中央領域の厚さ以下の厚みを有したものとするのが良い。さらにより好ましくは、前記端面形状調整部は、その厚さが前記周辺部領域の厚さより厚くかつ前記中央領域の厚さ以下の厚みを有し、かつその端面が垂直又はほぼ垂直な面を有したものとするのが良い（図１（Ｂ）参照）。これら好適例によれば、中央領域を形成するためのフォトリソグラフィ工程を工夫することで任意の端面形状調整部を得られるからである。 In order to achieve this object, according to the crystal resonator invention of this application, the thickness of the central region is a thickness corresponding to the frequency required for the crystal resonator, and the periphery of the central region is the center region. In a crystal resonator including an AT-cut crystal piece which is a region thinner than the region (hereinafter also referred to as a peripheral region), at least a part of the end portion of the peripheral region includes an end face shape adjusting unit. It is characterized by that.
In practicing the present invention, it is preferable that the end face shape adjusting portion is provided at both ends along the Z ′ axis of the AT-cut crystal piece and along the X axis. This is because the vibration energy generated along the Z′-axis of the AT-cut crystal piece can be adjusted by this end face shape adjusting unit, and can contribute to the characteristic control of the crystal resonator. In carrying out the present invention, it is preferable that the end face shape adjusting portion has a thickness not less than the thickness of the peripheral region and not more than the thickness of the central region. More preferably, the end face shape adjusting portion has a thickness larger than that of the peripheral region and not more than a thickness of the central region. Even more preferably, the end face shape adjusting portion has a thickness greater than that of the peripheral region and not greater than the thickness of the central region, and the end surface has a vertical or substantially vertical surface. (See FIG. 1B). This is because according to these preferred examples, an arbitrary end face shape adjusting portion can be obtained by devising a photolithography process for forming the central region.

また、この出願の水晶振動子の製造方法の発明によれば、中央領域の厚みが当該水晶振動子に要求される周波数に応じた厚みとなっていて、前記中央領域の周辺は前記中央領域より厚さが薄い領域（以下、周辺部領域ともいう）になっている水晶振動子の製造方法であって、水晶基板の各水晶片を形成する予定領域をそれぞれ覆う第１マスクを水晶基板に形成する工程と、第１マスクを形成した水晶基板をウエットエッチングして水晶片の外形を形成する工程と、前記第１マスクを除去した後に前記水晶基板の前記中央領域形成予定領域をそれぞれ覆う第２マスクを形成する工程と、前記第２マスクを形成した水晶基板をウエットエッチングして前記中央領域及び周辺部領域を形成する工程と、を含む水晶振動子の製造方法において、
前記第２マスクとして、前記周辺部領域の端面に端面形状調整部を形成するため当端面調整部形成予定領域を覆う調整部用マスク部をさらに具えるマスクを用いることを特徴とする。この製造方法の発明を実施するに当たり、前記調整部用マスク部は、ＡＴカット水晶片のＺ′軸に沿った両端にＸ軸に沿って設けるのが良い。 Further, according to the crystal resonator manufacturing method invention of this application, the thickness of the central region is a thickness according to the frequency required for the crystal resonator, and the periphery of the central region is smaller than the central region. A method for manufacturing a crystal resonator having a thin region (hereinafter also referred to as a peripheral region), wherein a first mask is formed on the crystal substrate to cover each region of the crystal substrate on which each crystal piece is to be formed. A step of performing wet etching on the quartz substrate on which the first mask is formed to form the outer shape of the quartz piece, and a second step of covering the central region formation planned region of the quartz substrate after removing the first mask. In a method for manufacturing a crystal resonator, comprising: a step of forming a mask; and a step of wet etching the crystal substrate on which the second mask is formed to form the central region and the peripheral region.
As the second mask, a mask further including an adjustment portion mask portion that covers the region where the end face adjustment portion is to be formed is used to form an end face shape adjustment portion on the end face of the peripheral portion region. In carrying out the invention of the manufacturing method, the adjustment portion mask portion is preferably provided along the X axis at both ends along the Z ′ axis of the AT-cut crystal piece.

この発明によれば、水晶片の所定の縁部に設けた端面形状調整部によりいわゆるメサ構造の水晶振動子の特性を調整できる。   According to the present invention, the characteristics of the so-called mesa crystal resonator can be adjusted by the end face shape adjusting portion provided at the predetermined edge of the crystal piece.

（Ａ），（Ｂ）は実施形態の水晶振動子の特に水晶片１１を説明する図である。(A), (B) is a figure explaining especially the crystal piece 11 of the crystal oscillator of embodiment. （Ａ）〜（Ｄ）は、実施形態の水晶振動子２１の構造を説明する図である。(A)-(D) are the figures explaining the structure of the crystal oscillator 21 of embodiment. （Ａ），（Ｂ）は実施形態の水晶片１１の製法を説明する図である。(A), (B) is a figure explaining the manufacturing method of the crystal piece 11 of embodiment. （Ａ），（Ｂ）は、実施形態の水晶片１１の製法を説明する図３に続く工程図である。(A), (B) is process drawing following FIG. 3 explaining the manufacturing method of the crystal piece 11 of embodiment. （Ａ），（Ｂ）は、実施形態の水晶片１１の製法を説明する図４に続く工程図である。(A), (B) is process drawing following FIG. 4 explaining the manufacturing method of the crystal piece 11 of embodiment. （Ａ）〜（Ｃ）は、実施形態の水晶片１１の製法を説明する図５に続く工程図である。(A)-(C) are process drawings following FIG. 5 explaining the manufacturing method of the quartz piece 11 of embodiment. は、実施形態の水晶片１１の製法を説明する図６に続く工程図である。These are process drawings following FIG. 6 explaining the manufacturing method of the crystal blank 11 of the embodiment. （Ａ）〜（Ｃ）は、実施形態の水晶片１１の製法を説明する図７に続く工程図である。(A)-(C) are process drawings following FIG. 7 explaining the manufacturing method of the quartz piece 11 of embodiment. （Ａ），（Ｂ）は、水晶振動子の他の実施形態を説明する図である。(A), (B) is a figure explaining other embodiment of a crystal oscillator. （Ａ）〜（Ｃ）は、端面形状調整部を形成する際に用いるマスクの他の実施形態とそれに基づく効果を説明する図である。(A)-(C) is a figure explaining other embodiment of the mask used when forming an end surface shape adjustment part, and the effect based on it.

以下、図面を参照してこの出願に係る水晶振動子及びその製造方法の実施形態について説明する。なお、説明に用いる各図はこの発明を理解できる程度に概略的に示してあるにすぎない。また、説明に用いる各図において、同様な構成成分については同一の番号を付して示し、その説明を省略する場合もある。また、以下の実施例中で述べる形状、寸法、材質等はこの発明の範囲内の好適例に過ぎない。従って、本発明が以下の実施形態のみに限定されるものではない。   Hereinafter, an embodiment of a crystal resonator and a manufacturing method thereof according to this application will be described with reference to the drawings. It should be noted that the drawings used for the description are merely schematically shown to the extent that the present invention can be understood. Moreover, in each figure used for description, about the same component, it attaches | subjects and shows the same number, The description may be abbreviate | omitted. The shapes, dimensions, materials, and the like described in the following examples are only suitable examples within the scope of the present invention. Therefore, the present invention is not limited only to the following embodiments.

１． ＡＴカット水晶片と水晶振動子の構造
図１（Ａ）、（Ｂ）は、実施形態のＡＴカット水晶片１１の説明図である。特に、図１（Ａ）は水晶片１１の平面図、図１（Ｂ）は図１（Ａ）中のＭ−Ｍ線に沿った水晶片１１の断面図である。なお、この図１（Ｂ）の断面図は、試作した試料のＭ−Ｍ線に沿って切った断面のＳＥＭ写真を模写したものでもある。 1. Structure of AT-Cut Crystal Piece and Crystal Resonator FIGS. 1A and 1B are explanatory diagrams of the AT-cut crystal piece 11 of the embodiment. 1A is a plan view of the crystal piece 11, and FIG. 1B is a cross-sectional view of the crystal piece 11 taken along line MM in FIG. 1A. Note that the cross-sectional view of FIG. 1B is a copy of a SEM photograph of a cross section taken along line MM of the prototype sample.

なお、図１中に示した座標軸Ｘ，Ｙ′、Ｚ′は、それぞれＡＴカット水晶片での水晶の結晶軸を示す。なお、ＡＴカット水晶片自体の詳細は、例えば、文献：「水晶デバイスの解説と応用」。日本水晶デバイス工業会２００２年３月第４版第７頁等に記載されているので、ここではその説明を省略する。   Note that the coordinate axes X, Y ′, and Z ′ shown in FIG. 1 indicate crystal axes of quartz in the AT-cut crystal piece. The details of the AT-cut crystal piece itself are, for example, the document: “Explanation and application of crystal device”. Since it is described in Japan Quartz Device Association, March 2002, 4th edition, page 7, etc., its description is omitted here.

この発明に係るＡＴカット水晶片１１は、Ｘ方向に沿う辺を長辺とする平面形状が長方形状のものである。そして、この水晶片１１は、水晶片の中央を含む所定領域（これを中央領域１１ａと称する）と、この中央領域１１ａの周辺に設けた中央領域１１ａより厚さが薄い領域（これを周辺部領域１１ｂと称する）と、この周辺部領域１１ｂ内の水晶のＺ′軸に沿った両端であってＸ軸に沿う領域に設けた端面形状調整部１１ｃと、を具える。さらに、水晶片１１はその主面（Ｘ−Ｚ′面）両面に励振用電極１３ａおよび引出電極１３ｂを具える。
中央領域１１ａの厚みは当該水晶振動子に要求される発振周波数に応じ決められる。また、周辺部領域１１ｂの厚みは、中央領域１１ａの厚み対し、典型的には数〜１０数μｍ薄くされる。このような構造では、中央領域１１ａが凸状になるため、ここに水晶振動子の振動エネルギー閉じ込めが優位に起きるので、振動特性を良好なものとできる。 The AT-cut crystal piece 11 according to the present invention has a rectangular planar shape with a long side extending along the X direction. The crystal piece 11 includes a predetermined area including the center of the crystal piece (referred to as a central area 11a) and an area having a thickness smaller than that of the central area 11a provided in the periphery of the central area 11a. And an end face shape adjusting portion 11c provided at both ends along the Z′-axis of the crystal in the peripheral region 11b and along the X-axis. Further, the crystal piece 11 includes an excitation electrode 13a and an extraction electrode 13b on both main surfaces (XZ ′ surfaces).
The thickness of the central region 11a is determined according to the oscillation frequency required for the crystal resonator. Further, the thickness of the peripheral region 11b is typically reduced by several to several tens μm with respect to the thickness of the central region 11a. In such a structure, since the central region 11a has a convex shape, the vibration energy confinement of the crystal resonator occurs preferentially here, so that the vibration characteristics can be improved.

また、この実施形態の端面形状調整部１１ｃは、図１（Ｂ）からも理解できる通り、水晶片１１のＺ′軸と交差する面（Ｚ′面）が水晶片１１の主面（Ｙ′面）に対し垂直又は略垂直となる面を有したものである。然も、この実施形態の場合の端面形状調整部１１ｃは、その厚さが周辺部領域１１ｂより厚くかつ中央領域と実質的に同じ厚さのものとなっている。すなわち、上述の特許文献２に記載されているＺ′軸に沿って凸状かつ複数の面からなる側面とは異なる形状となっている。そのため、この端面形状調整部１１ｃによれば、特許文献２の場合とは違った目的での水晶振動子の特性の調整が行える。特にこの実施形態の場合では、Ｚ′方向に伝搬する振動がこの端面調整部１１ｃにより影響を受けるため、これに起因した水晶振動子の特性を調整することができる。
なお、端面形状調整部１１ｃの形状やＺ′方向の寸法、また、その厚さは、水晶振動子の設計に応じ決めることができ、後述する製法説明中の第２マスクの調整部用マスク部３３ｂ（図５参照）の形状を変えることで制御できる。 In addition, as can be understood from FIG. 1B, the end surface shape adjusting portion 11c of this embodiment has a surface (Z ′ surface) intersecting with the Z ′ axis of the crystal piece 11 as the main surface (Y ′). A surface that is perpendicular or substantially perpendicular to the surface. However, the end face shape adjusting portion 11c in this embodiment is thicker than the peripheral region 11b and substantially the same thickness as the central region. That is, it has a shape that is different from the side surface that is convex and has a plurality of surfaces along the Z ′ axis described in Patent Document 2. Therefore, according to the end face shape adjusting portion 11c, the characteristics of the crystal resonator can be adjusted for a purpose different from that in the case of Patent Document 2. In particular, in the case of this embodiment, the vibration propagating in the Z ′ direction is affected by the end face adjusting portion 11c, so that the characteristics of the crystal resonator due to this can be adjusted.
The shape of the end face shape adjusting portion 11c, the dimension in the Z ′ direction, and the thickness thereof can be determined according to the design of the crystal resonator, and the mask portion for the adjusting portion of the second mask in the manufacturing method described later. It can be controlled by changing the shape of 33b (see FIG. 5).

また、励振電極１３ａは、図１に示した例では、中央領域１１ａを含むこの中央領域より広い領域に設けてある。しかし、励振電極１１ａの大きさ及び位置は、水晶振動子の設計に応じ変更できる。従って、励振電極１３ａは、例えば中央領域１１ａより小さくかつ中央得領域１１ａ内に収まるように設けても良い。   Further, in the example shown in FIG. 1, the excitation electrode 13a is provided in a region wider than the central region including the central region 11a. However, the size and position of the excitation electrode 11a can be changed according to the design of the crystal resonator. Therefore, the excitation electrode 13a may be provided, for example, so as to be smaller than the central region 11a and within the central acquisition region 11a.

上記の水晶片１１によれば、例えば下記の様な表面実装型の水晶振動子２０を構成できる。図２はその説明図であり、特に（Ａ）図は実施形態の水晶振動子に具わる容器２１の平面図、（Ｂ）図は（Ａ）図中のＳ−Ｓ線に沿う容器２１の断面図、（Ｃ）図は容器２１に水晶片１１を実装した様子を示す平面図、（Ｄ）図は（Ｃ）図中のＳ−Ｓ線に沿う水晶振動子２０の断面図である。
容器として、例えばセラミックパッケージ２１を用意する。この場合のセラミックパッケージ２１は、水晶片１１を収納する凹部２１ａと、その凹部２１ａの底面に設けた水晶振動子固定用のバンプ２１ｂと、パッケージ２１の裏面に設けた実装端子２１ｃとを具えている。バンプ２１ｂと実装端子２１ｃとはビヤ配線（図示せず）により電気的に接続してある。 According to the above-described crystal piece 11, for example, the following surface-mount type crystal resonator 20 can be configured. 2A and 2B are explanatory diagrams thereof. In particular, FIG. 2A is a plan view of the container 21 included in the crystal resonator of the embodiment, and FIG. 2B is a plan view of the container 21 along the line S-S in FIG. A cross-sectional view, (C) is a plan view showing a state in which the crystal piece 11 is mounted on the container 21, and (D) is a cross-sectional view of the crystal resonator 20 along the line SS in FIG.
For example, a ceramic package 21 is prepared as a container. In this case, the ceramic package 21 includes a concave portion 21 a for accommodating the crystal piece 11, a crystal resonator fixing bump 21 b provided on the bottom surface of the concave portion 21 a, and a mounting terminal 21 c provided on the back surface of the package 21. Yes. The bump 21b and the mounting terminal 21c are electrically connected by via wiring (not shown).

このパッケージ２１の凹部２１ａ内に、水晶片１１を実装する。詳細には、バンプ２１ｂ上に導電性接着材２３(図２（Ｄ）)を塗布し、この接着材２３により、バンプ２１ｂに水晶片１１を引出電極１３ｂ(図１参照)の箇所で固定する。その後、水晶片１１の発振周波数調整を周知の方法により所定値に調整し、次に、パッケージ２１の凹部２１ａ内を適度な真空又は不活性ガス雰囲気等にした後、蓋２５(図２（Ｄ）参照)により凹部２１ａを周知の方法により封止する。   The crystal piece 11 is mounted in the recess 21 a of the package 21. More specifically, a conductive adhesive 23 (FIG. 2D) is applied onto the bump 21b, and the crystal piece 11 is fixed to the bump 21b at the position of the extraction electrode 13b (see FIG. 1) by this adhesive 23. . Thereafter, the adjustment of the oscillation frequency of the crystal piece 11 is adjusted to a predetermined value by a well-known method, and then the inside of the recess 21a of the package 21 is set to an appropriate vacuum or inert gas atmosphere, and then the lid 25 (FIG. 2D (D The recess 21a is sealed by a known method.

２． ＡＴカット水晶片１１の製法例
次に、図３〜図８を参照して、実施形態のＡＴカット水晶片１１の製法例について説明する。この水晶片１１は、フォトリソグラフィ技術およびウエットエッチング技術により水晶基板（以下、水晶ウエハともいう）から多数製造できる。そのため、図３〜図８では、水晶ウエハ１１ｗの平面図と、その一部分Ｐを拡大した平面図を示してある。さらに、図３〜図８中の一部の図面では、水晶ウエハ１１ｗの一部分ＰのＱ−Ｑ線に沿う断面図や、Ｒ部分(図６（Ｂ）、図８（Ｂ）参照)の拡大図も併用している。 2. Example of Manufacturing AT-Cut Crystal Piece 11 Next, an example of manufacturing the AT-cut crystal piece 11 according to the embodiment will be described with reference to FIGS. A large number of crystal pieces 11 can be manufactured from a crystal substrate (hereinafter also referred to as a crystal wafer) by photolithography technology and wet etching technology. Therefore, in FIGS. 3-8, the top view of the quartz wafer 11w and the top view which expanded the part P are shown. Further, in some of the drawings in FIGS. 3 to 8, a cross-sectional view taken along the line Q-Q of a portion P of the crystal wafer 11 w and an enlarged R portion (see FIGS. 6B and 8B). The figure is also used together.

この製法例では、先ず、水晶ウエハ１１ｗを用意する(図３（Ａ）)。ＡＴカット水晶片１１の発振周波数は、周知の通り、水晶片１１の主面（Ｘ−Ｚ′面）の厚みでほぼ決まるので、水晶ウエハ１１ｗは、最終的な水晶片１１の厚さｔを有するものとする。   In this manufacturing method example, first, a quartz wafer 11w is prepared (FIG. 3A). As is well known, the oscillation frequency of the AT-cut crystal piece 11 is almost determined by the thickness of the main surface (XZ ′ surface) of the crystal piece 11, so that the crystal wafer 11 w has a final thickness t of the crystal piece 11. Shall have.

次に、この水晶ウエハ１１ｗの表裏両面に、水晶片の外形を形成するための第１マスク３１を形成する(図３（Ｂ）)。この実施形態の第１マスク３１は、水晶ウエハ１１ｗの各水晶片を形成する予定領域を覆う部分３１ａ、各水晶片を保持するフレーム部分を覆う部分３１ｂ、および、水晶片とフレーム部分とを連結する部分を覆う部分３１ｃを含むものである。この第１マスク３１は、水晶ウエハ１１ｗの表裏で対向するように形成する。   Next, the first mask 31 for forming the outer shape of the crystal piece is formed on both the front and back surfaces of the crystal wafer 11w (FIG. 3B). In the first mask 31 of this embodiment, a portion 31a that covers a planned region for forming each crystal piece of the crystal wafer 11w, a portion 31b that covers a frame portion that holds each crystal piece, and a crystal piece and a frame portion are connected to each other. The portion 31c covering the portion to be covered is included. The first mask 31 is formed to face the front and back of the quartz wafer 11w.

第１マスク３１の形成が済んだ水晶ウエハ１１ｗを、フッ酸を主とするエッチング液中に所定の時間浸漬する。この処理により、水晶ウエハ１１ｗの第１マスク３１で覆われていない部分が溶解されて、水晶片１１の外形が得られる(図４（Ｂ）)。
次に、水晶ウエハ１１ｗから第１マスク３１を除去する。その後、この水晶ウエハ１１ｗの表裏に第２マスク３３を新たに形成する(図５)。この実施形態の第２マスク３３は、水晶片の中央領域１１ａを形成する予定領域を覆う部分３３ａ、端面形状調整部１１ｃ（図１参照）を形成する予定領域を覆う部分３３ｂ（すなわち調整部用マスク部３３ｂ）、フレーム部分を覆う部分３３ｃ、および、水晶片とフレーム部分とを連結する部分を覆う部分３３ｄを含むものとしてある。この第２マスク３３は、水晶ウエハ１１ｗの表裏で対向するように形成する。なお、この実施形態の調整部用マスク部３３ｂはＺ′方向の幅がある程度の寸法のものとする。ある程度の幅とは、この後に行われるウエットエッチング時に調整部用マスク部３３ｂと水晶片との界面にサイドエッチングが生じても、調整部用マスク部３３ｂが剥離されず残存できる程度の幅であり、かつ、水晶振動子の特性調整に要求される幅である。 The quartz crystal wafer 11w after the formation of the first mask 31 is immersed in an etching solution mainly containing hydrofluoric acid for a predetermined time. By this processing, the portion of the crystal wafer 11w that is not covered with the first mask 31 is melted, and the outer shape of the crystal piece 11 is obtained (FIG. 4B).
Next, the first mask 31 is removed from the crystal wafer 11w. Thereafter, a second mask 33 is newly formed on the front and back of the crystal wafer 11w (FIG. 5). The second mask 33 of this embodiment includes a portion 33a that covers the planned region for forming the central region 11a of the crystal piece, and a portion 33b that covers the planned region for forming the end surface shape adjusting portion 11c (see FIG. 1) (that is, for the adjusting portion). The mask portion 33b), a portion 33c covering the frame portion, and a portion 33d covering the portion connecting the crystal piece and the frame portion are included. The second mask 33 is formed so as to face the front and back of the quartz wafer 11w. Note that the adjustment portion mask portion 33b of this embodiment has a certain width in the Z ′ direction. The certain width is a width that allows the adjustment portion mask portion 33b to remain without being peeled even if side etching occurs at the interface between the adjustment portion mask portion 33b and the crystal piece during the subsequent wet etching. And the width required for adjusting the characteristics of the crystal resonator.

次に、この水晶ウエハ１１ｗを、フッ酸を主とするエッチング液中に、再度、浸漬する。この浸漬時間は、水晶片１１の中央領域１１ａの周囲に周辺部領域１１ｂが形成できる時間である。このエッチング処理においては、水晶ウエハ１１ｗの第２マスク３３で覆われていない部分がエッチングされるので、周辺部領域１１ｂが形成される（図６（Ｃ）)。また、この際、水晶ウエハ１１ｗの調整部用マスク部３３ｂで覆われている部分はほぼ残存するのでこの部分に端面形状調整部１１ｃが形成される（図６（Ｃ））。なお、図６（Ｃ）に示した部分は１つの水晶片の断面に当たる部分であり、図６（Ｂ）中のＲ部分を拡大したものに相当する。その後、第２マスクを除去して水晶面を露出させる（図７）。   Next, the crystal wafer 11w is immersed again in an etching solution mainly containing hydrofluoric acid. This immersion time is a time during which the peripheral region 11 b can be formed around the central region 11 a of the crystal piece 11. In this etching process, the portion of the crystal wafer 11w that is not covered with the second mask 33 is etched, so that the peripheral region 11b is formed (FIG. 6C). At this time, the portion covered with the adjustment portion mask portion 33b of the crystal wafer 11w remains substantially, and thus the end face shape adjustment portion 11c is formed in this portion (FIG. 6C). Note that the portion shown in FIG. 6C corresponds to a cross section of one crystal piece, and corresponds to an enlarged portion of the R portion in FIG. 6B. Thereafter, the second mask is removed to expose the crystal surface (FIG. 7).

次に、この水晶ウエハ全面に、周知の成膜方法により、水晶振動子の励振電極および引出電極形成用の金属膜(図示せず)を形成する。次に、この金属膜を、周知のフォトリソグラフィ技術およびメタルエッチング技術により、電極形状にパターニングして、励振電極１３ａおよび引出電極１３ｂを形成する（図８）。これにより、中央領域１１ａと、周辺部領域１１ｂと、端面調整部１１ｃと、励振電極１３ａと、引出電極１３ｂとを具える水晶片１１を得ることができる（図８）。   Next, a metal film (not shown) for forming the excitation electrode and the extraction electrode of the crystal resonator is formed on the entire surface of the crystal wafer by a known film forming method. Next, this metal film is patterned into an electrode shape by a known photolithography technique and metal etching technique to form the excitation electrode 13a and the extraction electrode 13b (FIG. 8). Thereby, the crystal piece 11 including the central region 11a, the peripheral region 11b, the end face adjusting portion 11c, the excitation electrode 13a, and the extraction electrode 13b can be obtained (FIG. 8).

なお、図８に示した状態では、各水晶片１１は水晶ウエハ１１ｗに連結部１１ｘを介して結合している状態である。そこで、先ず、連結部１１ｘに適当な外力を加えて、水晶片１１を水晶ウエハ１１ｗから分離し、個片化する。そしてこの個片化した水晶片１１を図２を用いて説明したように容器に実装することで、水晶振動子２０（図２参照）を得ることができる。   In the state shown in FIG. 8, each crystal piece 11 is connected to the crystal wafer 11w via the connecting portion 11x. Therefore, first, an appropriate external force is applied to the connecting portion 11x to separate the crystal piece 11 from the crystal wafer 11w and to separate it. The crystal unit 20 (see FIG. 2) can be obtained by mounting the separated crystal unit 11 on the container as described with reference to FIG.

３．他の実施形態
上述においては、この発明のＡＴカット水晶片およびこれを用いた水晶振動子の実施形態を説明したが、この発明は上述の実施形態に限られない。
例えば、ＡＴカット水晶片の構造は図１の例に限られず、例えば図９に示した構造のものでも良い。先ず、図９（Ａ）に示したように、端面形状調整部１１ｃを有する水晶片１１と、この水晶片１１と一体に形成されていてこの水晶片１１を貫通部１１ｙを隔てて全周囲で囲う枠部１１ｙと、同じく一体に形成されていてこれら水晶片１１と枠部１１ｙとを連結する１つの連結部１１ｘと、を具えた水晶片であっても良い。また、図９（Ｂ）に示したように、端面形状調整部１１ｃを有する水晶片１１と、この水晶片と一体に形成されていてこの水晶片１１を貫通部１１ｙを隔てて一部で囲う枠部１１ｙと、同じく一体に形成されていてこれら水晶片１１と枠部１１ｙとを連結する１つの連結部１１ｘと、を具えた水晶片であっても良い。また、連結部が２つ以上あっても良い。ただし、連結部が１つの方が、水晶片１１から枠部への振動漏れや、枠部から水晶片への応力の影響を軽減し易い。また、連結部１１ｘを設ける位置は図１０の例に限られず、設計に応じて変更できる。 3. Other Embodiments In the above description, embodiments of the AT-cut crystal piece of the present invention and a crystal resonator using the same have been described. However, the present invention is not limited to the above-described embodiment.
For example, the structure of the AT-cut crystal piece is not limited to the example shown in FIG. 1, and may be the structure shown in FIG. First, as shown in FIG. 9 (A), a crystal piece 11 having an end face shape adjusting portion 11c and the crystal piece 11 are formed integrally with the crystal piece 11, and the crystal piece 11 is separated from the penetrating portion 11y all around. It may be a crystal piece that includes a surrounding frame portion 11y and a single connecting portion 11x that is integrally formed and connects the crystal piece 11 and the frame portion 11y. Further, as shown in FIG. 9B, the crystal piece 11 having the end face shape adjusting portion 11c and the crystal piece 11 are formed integrally with the crystal piece, and the crystal piece 11 is partially surrounded by the penetrating portion 11y. It may be a crystal piece including the frame portion 11y and a single connection portion 11x that is integrally formed and connects the crystal piece 11 and the frame portion 11y. Further, there may be two or more connecting portions. However, the one connecting portion is easy to reduce the influence of vibration leakage from the crystal piece 11 to the frame portion and the stress from the frame portion to the crystal piece. Further, the position where the connecting portion 11x is provided is not limited to the example of FIG. 10 and can be changed according to the design.

また、端面形状調整部１１ｃの形状も水晶振動子に要求される特性に応じて変更することが出来る。例えば、図１０（Ａ）に示すように、第２マスク３３の調整部形成用マスク部３３ｂの幅Ｗｚを、周辺部領域１１ｂ（図６（Ｃ）参照）形成時のウエットエッチングの途中段階で調整部形成用マスク部３３ｂと水晶との界面でのサイドエッチングによりこのマスク３３ｂが除去されるような狭い寸法にしておくこともできる。こうした場合は、端面形状調整部１１ｃは、図１０（Ｃ）に示したように、図１に示した場合に比べ凸状の程度も小さい形状にできる。すなわち、端面形状調整部の厚さを周辺部領域１１ｂの厚さに近い厚さにできる。また、図１０（Ｂ）に示すように、第２マスク３３の調整部形成用マスク部３３ｂを、スペース部３３ｓを有したものとしても良い。この場合も、周辺部領域１１ｂ（図６（Ｃ）参照）形成時のウエットエッチングの途中段階で調整部形成用マスク部３３ｂと水晶との界面でのサイドエッチングによりこのマスク３３ｂが除去され易いので、端面形状調整部１１ｃは、図１に示した場合に比べ凸状の程度も小さい形状にできる。すなわち、端面形状調整部の厚さを周辺部領域１１ｂの厚さに近い厚さにできる。   Also, the shape of the end face shape adjusting portion 11c can be changed according to the characteristics required for the crystal resonator. For example, as shown in FIG. 10A, the width Wz of the adjustment portion forming mask portion 33b of the second mask 33 is set in the middle of the wet etching at the time of forming the peripheral region 11b (see FIG. 6C). It is also possible to make the dimensions so narrow that the mask 33b is removed by side etching at the interface between the adjustment portion forming mask portion 33b and the crystal. In such a case, as shown in FIG. 10C, the end surface shape adjusting portion 11c can be formed into a shape having a smaller convex shape than the case shown in FIG. That is, the thickness of the end face shape adjusting portion can be made close to the thickness of the peripheral region 11b. As shown in FIG. 10B, the adjustment portion forming mask portion 33b of the second mask 33 may have a space portion 33s. Also in this case, the mask 33b is easily removed by side etching at the interface between the adjustment portion forming mask portion 33b and the crystal in the middle of the wet etching in forming the peripheral region 11b (see FIG. 6C). The end face shape adjusting portion 11c can be formed in a shape having a smaller degree of convexity than the case shown in FIG. That is, the thickness of the end face shape adjusting portion can be made close to the thickness of the peripheral region 11b.

このように、調整部形成用マスク部３３ｂの寸法や形状を選択することにより端面形状調整部１１ｃの形状、大きさを変更でき、従って、水晶振動子の特性を調整することができる。なお、上述においては、端面形状調整部１１ｃは水晶片のＺ′軸に沿う両端であってＸ軸に沿う領域に設けたが、水晶片のＸ軸に沿う両端であってＺ′軸に沿う領域に設ける場合があっても良い。
また、上述の例では水晶のＸ軸に沿う辺を長辺とし、Ｚ′に沿う辺を短辺とする水晶片の例を示したが、水晶のＸ軸に沿う辺を短辺とし、Ｚ′に沿う辺を長辺とする水晶片にも本発明は適用できる。また、上述の例では平面形状が長方形状の水晶片の例を説明したが、角部がＲ加工やＣ加工されたような略長方形状の水晶片に対しても本発明は適用できる。 As described above, by selecting the size and shape of the adjustment portion forming mask portion 33b, the shape and size of the end face shape adjustment portion 11c can be changed, and thus the characteristics of the crystal resonator can be adjusted. In the above description, the end face shape adjusting portion 11c is provided at both ends along the Z′-axis of the crystal piece and in the region along the X-axis. However, it is at both ends along the X-axis of the crystal piece and along the Z′-axis. It may be provided in the region.
In the above-described example, an example of a crystal piece in which the side along the X axis of the crystal is the long side and the side along the Z ′ is the short side is shown. However, the side along the X axis of the crystal is the short side. The present invention can also be applied to a crystal piece having a long side extending along '. In the above example, an example of a crystal piece having a rectangular planar shape has been described. However, the present invention can also be applied to a substantially rectangular crystal piece whose corners are R-processed or C-processed.

１１:実施形態の水晶片
１１ａ：中央領域
１１ｂ：周辺部領域
１１ｃ：端面形状調整部
１１ｘ：連結部
１１ｗ：水晶基板（水晶ウエハ）
１３ａ：励振電極
１３ｂ：引出電極
２０：実施形態の水晶振動子
２１：容器
２１ａ：凹部
２１ｂ：バンプ
２３：導電性接着剤
２５：蓋
３１：第１マスク
３１ａ：第１マスクの各水晶片形成領域を覆う部分
３１ｂ：第１マスクのフレーム部を覆う部分
３１ｃ：第１マスクの連結部を覆う部分
３３:第２マスク
３３ａ：第２マスクの中央領域形成領域を覆う部分
３３ｂ：第２マスクの端部調整部形成領域を覆う部分（調整部形成用マスク部）
３３ｃ：第２マスクのフレーム部を覆う部分
３３ｄ：第２マスクの連結部を覆う部分
３３ｓ：スペース部 11: Crystal piece of embodiment 11a: Central region 11b: Peripheral region 11c: End face shape adjusting unit 11x: Connection unit 11w: Crystal substrate (crystal wafer)
13a: Excitation electrode 13b: Extraction electrode 20: Crystal resonator of embodiment 21: Container 21a: Recess 21b: Bump 23: Conductive adhesive 25: Lid 31: First mask 31a: Each crystal piece forming region of the first mask 31b: A portion covering the frame portion of the first mask 31c: A portion covering the connecting portion of the first mask 33: Second mask 33a: A portion covering the central region forming region of the second mask 33b: Edge of the second mask Part that covers the part adjustment part formation region (mask part for adjustment part formation)
33c: part covering the frame part of the second mask 33d: part covering the connecting part of the second mask 33s: space part

Claims (6)

中央領域の厚みが当該水晶振動子に要求される周波数に応じた厚みとなっていて、前記中央領域の周辺は前記中央領域より厚さが薄い領域になっているＡＴカット水晶片を含む水晶振動子において、前記厚さが薄い領域の端部の少なくとも一部に端面形状調整部を具えることを特徴とする水晶振動子。   Quartz vibration including an AT-cut crystal piece in which the thickness of the central region is a thickness corresponding to the frequency required for the crystal resonator, and the periphery of the central region is a region thinner than the central region The quartz resonator including an end face shape adjusting portion in at least a part of an end portion of the thin region in the child. 請求項１に記載の水晶振動子において、
前記端面形状調整部は、ＡＴカット水晶片のＺ′軸に沿った両端であってＸ軸に沿った領域に具えることを特徴とする水晶振動子。 The crystal resonator according to claim 1,
The crystal unit according to claim 1, wherein the end face shape adjusting portion is provided at both ends along the Z′-axis of the AT-cut crystal piece and along a region along the X-axis. 請求項１又は２に記載の水晶振動子において、
前記端面形状調整部は、その厚さが前記厚さの薄い領域の厚さ以上でかつ前記中央領域の厚さ以下の厚みを有したものであることを特徴とする水晶振動子。 In the crystal unit according to claim 1 or 2,
The crystal oscillator according to claim 1, wherein the end face shape adjusting portion has a thickness not less than a thickness of the thin region and not more than a thickness of the central region. 中央領域の厚みが当該水晶振動子に要求される周波数に応じた厚みとなっていて、前記中央領域の周辺は前記中央領域より厚さが薄い領域になっているＡＴカット水晶片を含む水晶振動子の製造方法であって、水晶基板の各水晶片を形成する予定領域をそれぞれ覆う第１マスクを水晶基板に形成する工程と、前記第１マスクを形成した水晶基板をウエットエッチングして水晶片の外形を形成する工程と、前記第１マスクを除去した後に前記中央領域をそれぞれ覆う第２マスクを形成する工程と、前記第２マスクを形成した水晶基板をウエットエッチングして前記中央領域及び周辺部領域を形成する工程と、を含む水晶振動子の製造方法において、
前記第２マスクとして、厚さが薄い領域を形成する予定領域の少なくとも一部に端面形状調整部を形成するため当該領域を覆う調整部用マスク部をさらに具えるマスクを用いることを特徴とする水晶振動子の製造方法。 Quartz vibration including an AT-cut crystal piece in which the thickness of the central region is a thickness corresponding to the frequency required for the crystal resonator, and the periphery of the central region is a region thinner than the central region A method of manufacturing a child, comprising: forming a first mask on a quartz substrate that covers a region where each quartz piece of the quartz substrate is to be formed; and wet-etching the quartz substrate on which the first mask is formed to obtain the quartz piece Forming the outer shape, forming a second mask covering each of the central regions after removing the first mask, and wet-etching the quartz substrate on which the second masks are formed to form the central region and the periphery Forming a partial region, and a manufacturing method of a crystal resonator including:
As the second mask, a mask further including an adjustment portion mask portion that covers the region in order to form an end face shape adjustment portion in at least a part of a region where a thin region is to be formed is used. A method for manufacturing a crystal unit. 請求項４に記載の水晶振動子の製造方法において、前記調整部用マスク部は、ＡＴカット水晶片のＺ′軸に沿った両端にＸ軸に沿って設けることを特徴とする水晶振動子の製造方法。   5. The method for manufacturing a crystal resonator according to claim 4, wherein the adjustment portion mask portion is provided along the X-axis at both ends along the Z′-axis of the AT-cut crystal piece. Production method. 請求項４又は５に記載の水晶振動子の製造方法において、
前記調整部用マスク部は、前記厚さが薄い領域を形成するエッチング途中において当該マスク部と水晶基板との界面に生じるサイドエッチングにより一部又は全部が除去できる幅及び又は形状のものであることを特徴とする水晶振動子の製造方法。 In the manufacturing method of the crystal oscillator according to claim 4 or 5,
The adjustment portion mask portion is of a width and / or shape that can be partially or entirely removed by side etching that occurs at the interface between the mask portion and the quartz substrate during the etching to form the thin region. A method for manufacturing a quartz crystal resonator.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019075735A (en) * 2017-10-18 2019-05-16 株式会社村田製作所 Method for manufacturing piezoelectric vibration element and aggregate substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019075735A (en) * 2017-10-18 2019-05-16 株式会社村田製作所 Method for manufacturing piezoelectric vibration element and aggregate substrate
JP7045637B2 (en) 2017-10-18 2022-04-01 株式会社村田製作所 Manufacturing method of piezoelectric vibration element and assembly board

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