TW201906042A - Detection system for adjustable/replaceable edge coupling loop - Google Patents

Detection system for adjustable/replaceable edge coupling loop

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Publication number
TW201906042A
TW201906042A TW107118101A TW107118101A TW201906042A TW 201906042 A TW201906042 A TW 201906042A TW 107118101 A TW107118101 A TW 107118101A TW 107118101 A TW107118101 A TW 107118101A TW 201906042 A TW201906042 A TW 201906042A
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Taiwan
Prior art keywords
coupling ring
edge coupling
edge
substrate
ring
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TW107118101A
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Chinese (zh)
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TWI788356B (en
Inventor
瓊 麥可卻斯尼
王雨后
達蒙 蒂龍 杰納堤
亞歷山大 派特森
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美商蘭姆研究公司
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Priority claimed from US15/609,570 external-priority patent/US20170263478A1/en
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201906042A publication Critical patent/TW201906042A/en
Application granted granted Critical
Publication of TWI788356B publication Critical patent/TWI788356B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

A substrate processing system includes a processing chamber. A pedestal is arranged in the processing chamber. An edge coupling ring is arranged adjacent to the pedestal and around a radially outer edge of the substrate. An actuator is configured to selectively move the edge coupling ring relative to the substrate to alter an edge coupling profile of the edge coupling ring. The substrate processing system includes a camera-based detection system that instructs the actuator to adjust a position of the edge coupling ring. The camera is configured to communicate with the controller, and the controller adjusts a position and/or focus of the camera. In response to edge coupling ring condition information from the camera, the controller operates the actuator to move the edge coupling ring vertically. In response to edge coupling ring position information from the camera, the controller operates the actuator to move the edge coupling ring horizontally.

Description

用於可調式∕可取代式邊緣耦合環之偵測系統Detection system for adjustable / replaceable edge coupling ring

本申請案為2015年5月6日所申請之美國專利申請案第14/705,430號之部分連續申請案。該申請案又為2015年1月16日所申請之美國專利申請案第14/598,943號之部分連續申請案。這些先前申請案之全部內容皆合併於本案中做為參考資料。This application is part of a serial application of US Patent Application No. 14 / 705,430, filed on May 6, 2015. This application is part of the serial application of US Patent Application No. 14 / 598,943 filed on January 16, 2015. The entire contents of these previous applications are incorporated in this case as reference material.

本揭示內容係關於基板處理系統，具體而言係關於基板處理系統之邊緣耦合環，更具體而言係關於基板處理系統之邊緣耦合環之偵測系統。再具體而言，本揭示內容係關於偵測系統，用於偵測基板處理系統之邊緣耦合環之位置及∕或狀況。This disclosure relates to a substrate processing system, specifically to an edge coupling loop of a substrate processing system, and more specifically to a detection system of an edge coupling loop of a substrate processing system. More specifically, the present disclosure relates to a detection system for detecting the position and / or condition of an edge coupling ring of a substrate processing system.

本文中所提出之先前技術大致上用於呈現本揭示內容之背景。在此先前技術部分中所述之成果之範圍內，本案發明人之成果以及不適格做為申請時之先前技術之實施態樣，皆非直接或間接地被承認為對抗本揭示內容之先前技術。The prior art presented in this article is generally used to present the background of this disclosure. Within the scope of the achievements described in this prior art section, neither the achievements of the inventor of this case nor the implementation of the prior art at the time of application are recognized directly or indirectly as prior art against this disclosure. .

基板處理系統可用以執行基板（例如半導體晶圓）之蝕刻及∕或其它處理。可將基板配置於基板處理系統之處理腔室中之基座上。例如，在電漿蝕刻器中之蝕刻期間，將包含一或更多前驅物之氣體混合物引入處理腔室中，並且觸發電漿以蝕刻基板。The substrate processing system can be used to perform etching and / or other processing of substrates (such as semiconductor wafers). The substrate can be arranged on a pedestal in a processing chamber of a substrate processing system. For example, during etching in a plasma etcher, a gas mixture containing one or more precursors is introduced into the processing chamber, and the plasma is triggered to etch the substrate.

邊緣耦合環已經用於調整在基板之徑向外邊緣附近之電漿之蝕刻速率及∕或蝕刻輪廓。邊緣耦合環通常位於基座上、圍繞著基板之徑向外邊緣。在基板之徑向外邊緣處之處理條件可藉由改變以下者而加以修改：邊緣耦合環之位置、邊緣耦合環之內邊緣之形狀或輪廓、邊緣耦合環相對於基板之上表面之高度、邊緣耦合環之材料等。Edge coupling rings have been used to adjust the etch rate and / or etch profile of the plasma near the radially outer edge of the substrate. The edge coupling ring is usually located on the base and surrounds the radially outer edge of the substrate. The processing conditions at the radially outer edge of the substrate can be modified by changing the position of the edge coupling ring, the shape or contour of the inner edge of the edge coupling ring, the height of the edge coupling ring relative to the upper surface of the substrate, Material of edge coupling ring, etc.

改變邊緣耦合環需要打開處理腔室，此為不想要的。換言之，不打開處理腔室無法改變邊緣耦合環之邊緣耦合效果。當邊緣耦合環在蝕刻期間受到電漿侵蝕時，邊緣耦合效果會改變。校正邊緣耦合環之侵蝕需要打開處理腔室，以更換邊緣耦合環。Changing the edge coupling ring requires opening the processing chamber, which is undesirable. In other words, the edge coupling effect of the edge coupling ring cannot be changed without opening the processing chamber. When the edge coupling ring is subjected to plasma erosion during etching, the edge coupling effect changes. Correcting the erosion of the edge coupling ring requires opening the processing chamber to replace the edge coupling ring.

現在參考圖1-2，基板處理系統可包含基座20及邊緣耦合環30。邊緣耦合環30可包含單一部件、或二或更多部分。在圖1-2之範例中，邊緣耦合環30包含配置於基板33之徑向外邊緣附近之第一環形部32。第二環形部34在徑向上由第一環形部向內、位於基板33下方。第三環形部36係配置於第一環形部32下方。在使用期間，電漿42被引導於基板33處，以蝕刻基板33之外露部分。邊緣耦合環30係配置成有助於塑造電漿，從而對基板33進行均勻的蝕刻。Referring now to FIGS. 1-2, the substrate processing system may include a base 20 and an edge coupling ring 30. The edge coupling ring 30 may include a single part, or two or more parts. In the example of FIGS. 1-2, the edge coupling ring 30 includes a first annular portion 32 disposed near a radially outer edge of the substrate 33. The second annular portion 34 is located inward from the first annular portion in the radial direction and is located below the base plate 33. The third annular portion 36 is disposed below the first annular portion 32. During use, the plasma 42 is guided at the substrate 33 to etch exposed portions of the substrate 33. The edge coupling ring 30 is configured to help shape the plasma so that the substrate 33 is uniformly etched.

在圖2中，在邊緣耦合環30已經被使用之後，邊緣耦合環30之徑向內部之上表面可能呈現侵蝕，如48所標示。結果，電漿42可能傾向於以比基板33之徑向內部之蝕刻更快的速率蝕刻基板33之徑向外邊緣，如44可見。In FIG. 2, after the edge coupling ring 30 has been used, the radially inner upper surface of the edge coupling ring 30 may exhibit erosion, as indicated by 48. As a result, the plasma 42 may tend to etch the radial outer edge of the substrate 33 at a faster rate than the radial inside of the substrate 33, as seen at 44.

在基板處理系統中，邊緣耦合環之一或更多部分可相對於基板或基座而在垂直及∕或水平方向上移動。該移動在無需打開處理腔室之情形下、在蝕刻或其它基板處理期間改變電漿相對於基板之邊緣耦合效果。In a substrate processing system, one or more portions of the edge coupling ring can be moved in vertical and horizontal or horizontal directions relative to the substrate or base. This movement changes the edge coupling effect of the plasma relative to the substrate during the etching or other substrate processing without opening the processing chamber.

現在參考圖3-5，基板處理系統包含基座20及邊緣耦合環60。邊緣耦合環60可由單一部分組成，或者可使用二或更多部分。在圖3-5之範例中，邊緣耦合環60包含配置於基板33之徑向外側之第一環形部72。第二環形部74在徑向上由第一環形部72向內、位於基板33下方。第三環形部76係配置於第一環形部72下方。Referring now to FIGS. 3-5, the substrate processing system includes a base 20 and an edge coupling ring 60. The edge coupling ring 60 may be composed of a single part, or two or more parts may be used. In the example of FIGS. 3-5, the edge coupling ring 60 includes a first annular portion 72 disposed radially outward of the substrate 33. The second annular portion 74 is located inward in the radial direction from the first annular portion 72 and is located below the base plate 33. The third annular portion 76 is disposed below the first annular portion 72.

如以下將進一步描述，致動器80可配置於各種位置，以相對於基板33移動邊緣耦合環60之一或更多部分。僅做為範例，在圖3中，致動器80設置於邊緣耦合環60之第一環形部72與邊緣耦合環60之第三環形部76之間。在一些範例中，致動器80可包含壓電致動器、步進馬達、氣壓驅動機、或其它適合的致動器。在一些範例中，使用一、二、三、或四、或更多的致動器。在一些範例中，複數致動器係均勻地配置在邊緣耦合環60周圍。致動器80可配置在處理腔室之內側或外側。As will be described further below, the actuator 80 may be configured in various positions to move one or more portions of the edge coupling ring 60 relative to the substrate 33. As an example only, in FIG. 3, the actuator 80 is disposed between the first annular portion 72 of the edge coupling ring 60 and the third annular portion 76 of the edge coupling ring 60. In some examples, the actuator 80 may include a piezo actuator, a stepper motor, a pneumatic drive, or other suitable actuator. In some examples, one, two, three, or four, or more actuators are used. In some examples, the plurality of actuators are uniformly disposed around the edge coupling ring 60. The actuator 80 may be disposed inside or outside the processing chamber.

在使用期間，電漿82被引導於基板33處，以蝕刻基板33之外露部分。邊緣耦合環60係設置成有助於塑造電漿電場，從而對基板33進行均勻的蝕刻。如圖4中84及86可見，邊緣耦合環60之一或更多部分可能受到電漿82之侵蝕。由於該侵蝕，在基板33之徑向外邊緣附近可能發生基板33之不均勻蝕刻。通常，需要停止該處理、打開處理腔室、以及更換邊緣耦合環。During use, the plasma 82 is guided at the substrate 33 to etch exposed portions of the substrate 33. The edge coupling ring 60 is provided to help shape the plasma electric field, so that the substrate 33 is uniformly etched. As can be seen from 84 and 86 in FIG. 4, one or more parts of the edge coupling ring 60 may be eroded by the plasma 82. Due to this erosion, uneven etching of the substrate 33 may occur near the radially outer edge of the substrate 33. Generally, it is necessary to stop the process, open the process chamber, and replace the edge coupling ring.

在圖5中，致動器80用於移動邊緣耦合環60之一或更多部分，以改變邊緣耦合環60之一或更多部分之位置。例如，致動器80可用於移動邊緣耦合環60之第一環形部72。在此範例中，致動器80使邊緣耦合環60之第一環形部72在朝上或垂直的方向上移動，俾使邊緣耦合環60之第一環形部72之邊緣86係高於基板33之徑向外邊緣。因此，在基板33之徑向外邊緣附近之蝕刻均勻性得以改善。In FIG. 5, the actuator 80 is used to move one or more parts of the edge coupling ring 60 to change the position of one or more parts of the edge coupling ring 60. For example, the actuator 80 may be used to move the first annular portion 72 of the edge coupling ring 60. In this example, the actuator 80 moves the first annular portion 72 of the edge coupling ring 60 in an upward or vertical direction, so that the edge 86 of the first annular portion 72 of the edge coupling ring 60 is higher than A radial outer edge of the base plate 33. Therefore, the etching uniformity near the radially outer edge of the substrate 33 is improved.

現在參考圖6， 如可理解，致動器可配置在一或更多其它位置中，並且可在其它方向上移動，例如水平方向、對角方向等。可執行邊緣耦合環之部分之水平移動，以相對基板而使邊緣耦接效果置中。在圖6中，致動器110係配置於邊緣耦合環60之徑向外側。此外，致動器110在垂直（或上∕下）方向上、以及在水平（或側邊至側邊）方向上移動。當基板之蝕刻顯示邊緣耦合環相對於基板係水平偏移時，可使用水平的再定位。水平偏移可在不打開處理腔室之情形下加以校正。同樣地，可藉由使一些致動器以不同於其它致動器之方式操作而執行邊緣耦合環之傾斜，以校正或產生側邊至側邊的不對稱。Referring now to FIG. 6, as can be understood, the actuator may be configured in one or more other positions and may be moved in other directions, such as a horizontal direction, a diagonal direction, and the like. Horizontal movement of part of the edge coupling ring can be performed to center the edge coupling effect relative to the substrate. In FIG. 6, the actuator 110 is disposed radially outward of the edge coupling ring 60. In addition, the actuator 110 moves in a vertical (or up / down) direction and in a horizontal (or side-to-side) direction. When the etching of the substrate shows that the edge coupling ring is horizontally offset relative to the substrate system, horizontal repositioning can be used. The horizontal offset can be corrected without opening the processing chamber. Likewise, tilting of the edge coupling ring may be performed by making some actuators operate differently from others to correct or create side-to-side asymmetry.

致動器110亦可附接至徑向外壁或標示為114之其它結構，而不是使致動器110位於邊緣耦合環之環形部分之間。或者，致動器110可從下方由壁或標示為116之其它結構加以支撐。The actuator 110 may also be attached to a radial outer wall or other structure designated 114, instead of having the actuator 110 between the annular portions of the edge coupling ring. Alternatively, the actuator 110 may be supported from below by a wall or other structure designated 116.

現在參考圖7-8，顯示邊緣耦合環150及壓電致動器154之另一範例。在此範例中，壓電致動器154使邊緣耦合環150移動。壓電致動器154係安裝於邊緣耦合環150之第一環形部72與第三環形部76中。在圖8中，壓電致動器154使邊緣耦合環150之第一環形部72移動，以調整第一環形部72之邊緣156之位置。Referring now to FIGS. 7-8, another example of an edge coupling ring 150 and a piezoelectric actuator 154 is shown. In this example, the piezoelectric actuator 154 moves the edge coupling ring 150. The piezoelectric actuator 154 is installed in the first annular portion 72 and the third annular portion 76 of the edge coupling ring 150. In FIG. 8, the piezoelectric actuator 154 moves the first annular portion 72 of the edge coupling ring 150 to adjust the position of the edge 156 of the first annular portion 72.

保持處理腔室關閉可能造成在觀察邊緣耦合環狀況時之困難，以及隨後在判斷何時調整環之位置以補償侵蝕及何時更換環時之困難。Keeping the processing chamber closed may cause difficulties in observing the condition of the edge coupling ring, and subsequently in determining when to adjust the position of the ring to compensate for erosion and when to replace the ring.

此外，在更換邊緣耦合環時，在適當地定位及∕對準邊緣耦合環上可能有困難。In addition, when replacing the edge coupling ring, it may be difficult to properly position and align the edge coupling ring.

一基板處理系統包括一處理腔室。該處理腔室具有一有蓋的開口，透過該開口可觀察及∕或量測該腔室中之狀況，包括一邊緣耦合環之狀況及∕或位置，該邊緣耦合環係配置在該處理腔室中之一基座附近，並且圍繞著該基板之徑向外邊緣。提出一偵測系統，偵測該邊緣耦合環之狀況及∕或位置。A substrate processing system includes a processing chamber. The processing chamber has a cover opening through which the conditions in the chamber can be observed and / or measured, including the condition and location of an edge coupling ring, which is arranged in the processing chamber. Near one of the pedestals and surrounds the radially outer edge of the substrate. A detection system is proposed to detect the condition and / or position of the edge coupling ring.

在一特徵中，該偵測系統包括一攝影機，具有適合在不打開該處理腔室之情形下能夠觀察該邊緣耦合環之狀況之光學元件。In one feature, the detection system includes a camera with optical elements adapted to be able to observe the condition of the edge coupling ring without opening the processing chamber.

在一特徵中，設備包括一雷射干涉儀，以在不打開該處理腔室之情形下量測該邊緣耦合環之輪廓。In a feature, the device includes a laser interferometer to measure the contour of the edge coupling ring without opening the processing chamber.

取決於被觀察的狀況及∕或測量，例如，回應於該邊緣耦合環之面向電漿表面之侵蝕，一致動器用以相對於基板而選擇性地移動該邊緣耦合環之一第一部分，以改變該邊緣耦合環之邊緣耦合輪廓，而不需要打開該處理腔室。Depending on the condition being observed and / or measurement, for example, in response to erosion of the edge coupling ring facing the plasma surface, the actuator is used to selectively move a first part of the edge coupling ring relative to the substrate to change The edge coupling contour of the edge coupling ring does not require opening the processing chamber.

在其它特徵中，該致動器係用以相對於該邊緣耦合環之一第二部分而移動該邊緣耦合環之該第一部分。In other features, the actuator is configured to move the first portion of the edge coupling ring relative to a second portion of the edge coupling ring.

在其它特徵中，一控制器用以回應於該邊緣耦合環之面向電漿表面之侵蝕而移動該邊緣耦合環。在該邊緣耦合環暴露至預定數目之蝕刻循環之後，該控制器自動地移動該邊緣耦合環。在該邊緣耦合環暴露至預定時間之蝕刻之後，該控制器自動地移動該邊緣耦合環。In other features, a controller is used to move the edge coupling ring in response to erosion of the plasma coupling surface of the edge coupling ring. After the edge coupling ring is exposed to a predetermined number of etch cycles, the controller automatically moves the edge coupling ring. After the edge coupling ring is exposed to etching for a predetermined time, the controller automatically moves the edge coupling ring.

在其它特徵中，該致動器使該邊緣耦合環之該第一部分相對於該基板而在垂直方向上移動。該致動器使該邊緣耦合環之該第一部分相對於該基板而在水平方向上移動。一感測器或偵測器用以與該控制器通訊，並且偵測該邊緣耦合環之侵蝕。In other features, the actuator moves the first portion of the edge coupling ring in a vertical direction relative to the substrate. The actuator moves the first portion of the edge coupling ring in a horizontal direction relative to the substrate. A sensor or detector is used to communicate with the controller and detect erosion of the edge coupling ring.

在其它特徵中，該偵測器為一攝影機，安裝在該處理腔室之外側，並且透過該腔室之一側視窗而瞄準於該邊緣耦合環上。In other features, the detector is a camera installed outside the processing chamber and aimed at the edge coupling ring through a side window of the chamber.

在其它特徵中，該攝影機可使用電漿照明、或使用外部照明而提供該邊緣耦合環之狀況及∕或位置之影像或其它資訊。在其它特徵中，外部照明可透過與攝影機瞄準用之相同的側視窗而提供，或可透過不同的側視窗而提供。In other features, the camera may use plasma lighting or external lighting to provide images or other information about the condition and location of the edge coupling ring. In other features, external lighting may be provided through the same side window as that used for camera aiming, or may be provided through a different side window.

在其它特徵中，該偵測系統包括一控制器，該控制器調整該攝影機之位置及∕或對焦。在其它特徵中，移動該致動器之該控制器也調整該攝影機之位置及∕或對焦。該攝影機用以與該控制器通訊，且該控制器調整該攝影機之位置及∕或對焦。回應來自於該攝影機之邊緣耦合環狀況資訊，該控制器操作該致動器，以調整該邊緣耦合環相對於該基板之位置。回應來自於該攝影機之邊緣耦合環狀況資訊，該控制器操作該致動器，以使該邊緣耦合環在垂直方向上移動。回應來自於該攝影機之邊緣耦合環位置資訊，該控制器操作該致動器，以使該邊緣耦合環在水平方向上移動。回應來自於該攝影機之邊緣耦合環方位資訊，該控制器操作該致動器，以使該邊緣耦合環之一側相對於另一側而移動。In other features, the detection system includes a controller that adjusts the position and / or focus of the camera. In other features, the controller that moves the actuator also adjusts the position and / or focus of the camera. The camera is used to communicate with the controller, and the controller adjusts the position and / or focus of the camera. In response to the edge coupling ring condition information from the camera, the controller operates the actuator to adjust the position of the edge coupling ring relative to the substrate. In response to information on the condition of the edge coupling ring from the camera, the controller operates the actuator to move the edge coupling ring in a vertical direction. In response to the position information of the edge coupling ring from the camera, the controller operates the actuator to move the edge coupling ring in a horizontal direction. In response to the edge coupling ring orientation information from the camera, the controller operates the actuator to move one side of the edge coupling ring relative to the other.

在其它特徵中，機器臂用以與該控制器通訊並且調整該感測器之位置。該感測器包括一深度計。該感測器包括一雷射干涉儀。該致動器選擇性地使該邊緣耦合環相對於該基板而傾斜。該致動器係位於該處理腔室之外側。一桿狀構件穿過該處理腔室之一壁而將該致動器連接至該邊緣耦合環。In other features, the robot arm is used to communicate with the controller and adjust the position of the sensor. The sensor includes a depth gauge. The sensor includes a laser interferometer. The actuator selectively tilts the edge coupling ring relative to the substrate. The actuator is located outside the processing chamber. A rod-like member passes through a wall of the processing chamber to connect the actuator to the edge coupling ring.

在其它特徵中，一密封件配置在該桿狀構件與該處理腔室之該壁之間。一控制器用以移動該邊緣耦合環至一第一位置以使用第一邊緣耦合效果進行該基板之一第一處理，並接著至一第二位置以使用第二邊緣耦合效果進行該基板之一第二處理。In other features, a seal is disposed between the rod-shaped member and the wall of the processing chamber. A controller is used to move the edge coupling ring to a first position to perform a first processing of the substrate using a first edge coupling effect, and then to a second position to perform a first processing of the substrate using a second edge coupling effect. Second treatment.

用於調整在一基板處理系統中之一邊緣耦合環之一邊緣耦合輪廓之方法包括，將一邊緣耦合環配置在一處理腔室中之一基座附近。該邊緣耦合環係配置為圍繞著該基板之徑向外邊緣。該方法包括，使用一致動器以相對於基板而選擇性地移動該邊緣耦合環之一第一部分，以改變該邊緣耦合環之邊緣耦合輪廓。A method for adjusting an edge coupling profile of an edge coupling ring in a substrate processing system includes disposing an edge coupling ring near a base in a processing chamber. The edge coupling ring is configured to surround a radially outer edge of the substrate. The method includes using an actuator to selectively move a first portion of the edge coupling ring relative to the substrate to change an edge coupling profile of the edge coupling ring.

在其它特徵中，該方法包括，傳送處理氣體及載氣至該處理腔室。該方法包括，在該處理腔室中產生電漿以蝕刻該基板。該方法包括，使用一致動器以相對於基板而移動該邊緣耦合環之該第一部分，而不需要打開該處理腔室。該邊緣耦合環更包括一第二部分。該致動器用以相對於該邊緣耦合環之該第二部分而移動該邊緣耦合環之該第一部分。該致動器係選自於由壓電致動器、步進馬達致動器、及氣壓驅動致動器所組成之群組。In other features, the method includes delivering a process gas and a carrier gas to the processing chamber. The method includes generating a plasma in the processing chamber to etch the substrate. The method includes using an actuator to move the first portion of the edge coupling ring relative to the substrate without opening the processing chamber. The edge coupling ring further includes a second part. The actuator is used to move the first portion of the edge coupling ring relative to the second portion of the edge coupling ring. The actuator is selected from the group consisting of a piezoelectric actuator, a stepping motor actuator, and a pneumatically driven actuator.

在其它特徵中，該方法包括，回應於該邊緣耦合環之面向電漿表面之侵蝕而移動該邊緣耦合環。該方法包括，在該邊緣耦合環暴露至預定數目之蝕刻循環之後，自動地移動該邊緣耦合環。該方法包括，在該邊緣耦合環暴露至預定時間之蝕刻之後，自動地移動該邊緣耦合環。該方法包括，使該邊緣耦合環之該第一部分相對於該基板而在垂直方向上移動。該方法包括，使該邊緣耦合環之該第一部分相對於該基板而在水平方向上移動。In other features, the method includes moving the edge coupling ring in response to erosion of the plasma coupling surface of the edge coupling ring. The method includes automatically moving the edge coupling ring after the edge coupling ring is exposed to a predetermined number of etch cycles. The method includes automatically moving the edge coupling ring after the edge coupling ring is exposed to etching for a predetermined time. The method includes moving the first portion of the edge coupling ring in a vertical direction relative to the substrate. The method includes moving the first portion of the edge coupling ring in a horizontal direction relative to the substrate.

在其它特徵中，該方法包括，使該邊緣耦合環之該第一部分相對於該基板而在垂直方向上移動。該方法包括，使該邊緣耦合環之該第一部分相對於該基板而在水平方向上移動。一感測器或偵測器用以與該控制器通訊，並且偵測該邊緣耦合環之侵蝕。In other features, the method includes moving the first portion of the edge coupling ring in a vertical direction relative to the substrate. The method includes moving the first portion of the edge coupling ring in a horizontal direction relative to the substrate. A sensor or detector is used to communicate with the controller and detect erosion of the edge coupling ring.

在其它特徵中，該方法包括，使用一攝影機以感測該邊緣耦合環之侵蝕。該方法包括，使用來自該攝影機之影像以調整該邊緣耦合環之位置。該方法包括，回應該攝影機所提供之位置資訊，操作該致動器以調整該邊緣耦合環相對於該基板之位置。該方法包括，回應該攝影機所提供之關於邊緣耦合環狀況之資訊，操作該致動器以使該邊緣耦合環在垂直方向上移動。該方法包括，回應該攝影機所提供之關於邊緣耦合環位置之資訊，操作該致動器以使該邊緣耦合環在水平方向上移動。該方法包括，回應該攝影機所提供之關於邊緣耦合環位置之資訊，操作該致動器，以使該邊緣耦合環之一側相對於另一側而移動。In other features, the method includes using a camera to sense erosion of the edge coupling ring. The method includes using an image from the camera to adjust the position of the edge coupling ring. The method includes responding to the position information provided by the camera, and operating the actuator to adjust the position of the edge coupling ring relative to the substrate. The method includes responding to information provided by the camera about the condition of the edge coupling ring, and operating the actuator to move the edge coupling ring in a vertical direction. The method includes responding to information provided by the camera on the position of the edge coupling ring, and operating the actuator to move the edge coupling ring in a horizontal direction. The method includes responding to information provided by the camera on the position of the edge coupling ring, and operating the actuator to move one side of the edge coupling ring relative to the other.

在其它特徵中，該方法包括，使用一感測器以感測該邊緣耦合環之侵蝕。該感測器係選自於由深度計及雷射干涉儀所組成之群組。該方法包括，選擇性地使該邊緣耦合環相對於該基板而傾斜。該致動器係位於該處理腔室之外側。In other features, the method includes using a sensor to sense erosion of the edge coupling ring. The sensor is selected from the group consisting of a depth gauge and a laser interferometer. The method includes selectively tilting the edge coupling ring relative to the substrate. The actuator is located outside the processing chamber.

在其它特徵中，該方法包括，移動該邊緣耦合環至一第一位置以使用第一邊緣耦合效果進行該基板之一第一處理，以及移動該邊緣耦合環至一第二位置以使用第二邊緣耦合效果進行該基板之一第二處理。In other features, the method includes moving the edge coupling ring to a first position to perform a first processing of the substrate using a first edge coupling effect, and moving the edge coupling ring to a second position to use a second The edge coupling effect performs a second process on one of the substrates.

根據實施方式、申請專利範圍及圖式，本揭示內容之進一步應用範圍將變得明顯。實施方式及具體範例僅僅是為了說明之目的，並非用於限制本揭示內容之範疇。According to the embodiment, the scope of patent application and the drawings, the further application scope of the present disclosure will become apparent. The embodiments and specific examples are for illustrative purposes only, and are not intended to limit the scope of the present disclosure.

現在參考圖9，顯示使用RF電漿以執行蝕刻之基板處理腔室500之範例。基板處理腔室500包含處理腔室502，其包圍基板處理腔室500之其它構件、並且容納RF電漿。基板處理腔室500包含上電極504及基座506，基座506包含下電極507。邊緣耦合環503受到基座506所支撐，且係配置為圍繞著基板508。可使用一或更多致動器505以移動邊緣耦合環503。在操作期間，基板508係配置於基座506上、在上電極504與下電極507之間。Referring now to FIG. 9, an example of a substrate processing chamber 500 using an RF plasma to perform etching is shown. The substrate processing chamber 500 includes a processing chamber 502 that surrounds other components of the substrate processing chamber 500 and houses an RF plasma. The substrate processing chamber 500 includes an upper electrode 504 and a susceptor 506, and the susceptor 506 includes a lower electrode 507. The edge coupling ring 503 is supported by the base 506 and is configured to surround the base plate 508. One or more actuators 505 may be used to move the edge coupling ring 503. During operation, the substrate 508 is disposed on the base 506 between the upper electrode 504 and the lower electrode 507.

僅做為範例，上電極504可包含噴淋頭509，其導入及分配處理氣體。噴淋頭509可包含柄部，其包含連接至處理腔室之頂表面之一端。基部大致為圓柱形，且在與處理腔室之頂表面分隔開之位置處、自柄部的一相反端徑向朝外延伸。噴淋頭之基部之面向基板的表面或面板包含複數孔，處理氣體或吹淨氣體（purge gas）流動通過該等孔。或者，上電極504可包含傳導板，且處理氣體可以另一方式導入。下電極507可配置於非傳導基座中。或者，基座506可包含靜電夾盤，靜電夾盤包含傳導板做為下電極507。For example only, the upper electrode 504 may include a shower head 509 that introduces and distributes processing gas. The shower head 509 may include a handle including one end connected to a top surface of the processing chamber. The base portion is substantially cylindrical and extends radially outward from an opposite end of the handle portion at a position separated from the top surface of the processing chamber. The surface or panel of the base of the showerhead that faces the substrate contains a plurality of holes through which a process gas or a purge gas flows. Alternatively, the upper electrode 504 may include a conductive plate, and the processing gas may be introduced in another manner. The lower electrode 507 may be disposed in a non-conductive base. Alternatively, the base 506 may include an electrostatic chuck including a conductive plate as the lower electrode 507.

RF產生系統510產生及輸出RF電壓至上電極504與下電極507 其中一者。上電極504與下電極507其中另一者可為DC接地、AC接地、或浮接。僅做為範例，RF產生系統510可包含RF電壓產生器511，其產生RF電壓，其藉由匹配及分佈網路512而供給至上電極504或下電極507。在其它範例中，電漿可感應式地、或遠端地產生。The RF generating system 510 generates and outputs an RF voltage to one of the upper electrode 504 and the lower electrode 507. The other of the upper electrode 504 and the lower electrode 507 may be DC ground, AC ground, or floating. For example only, the RF generation system 510 may include an RF voltage generator 511 that generates an RF voltage that is supplied to the upper electrode 504 or the lower electrode 507 through a matching and distribution network 512. In other examples, the plasma may be generated inductively, or remotely.

氣體傳送系統530包含一或更多氣體源532-1、532-2、…、及532-N（統稱為氣體源532），其中N係大於0之整數。氣體源供應一或更多前驅物及其混合物。氣體源亦可供應吹淨氣體。亦可使用汽化的前驅物。氣體源532藉由閥534-1、534-2、…、534-N（統稱為閥534）及質量流量控制器536-1、536-2、…、536-N（統稱為質量流量控制器536）而連接至歧管540。歧管540之輸出係供給至處理腔室502。僅做為範例，歧管540的輸出係供給至噴淋頭509。The gas delivery system 530 includes one or more gas sources 532-1, 532-2, ..., and 532-N (collectively referred to as a gas source 532), where N is an integer greater than zero. The gas source supplies one or more precursors and mixtures thereof. The gas source can also supply purge gas. Vaporized precursors can also be used. The gas source 532 is controlled by valves 534-1, 534-2, ..., 534-N (collectively referred to as valve 534) and mass flow controllers 530-1, 536-2, ..., 536-N (collectively referred to as mass flow controller 536) and connected to the manifold 540. The output of the manifold 540 is supplied to the processing chamber 502. For example only, the output of the manifold 540 is supplied to the shower head 509.

加熱器542可連接至加熱器線圈（未顯示），其配置於基座506中。加熱器542可用於控制基座506及基板508之溫度。閥550及泵552可用於從處理室502抽空反應物。控制器560可用以控制基板處理腔室500之構件。控制器560亦可用以控制致動器505，以調整邊緣耦合環503之一或更多部分之位置。The heater 542 may be connected to a heater coil (not shown), which is disposed in the base 506. The heater 542 can be used to control the temperature of the base 506 and the substrate 508. The valve 550 and the pump 552 may be used to evacuate the reactants from the processing chamber 502. The controller 560 may be used to control the components of the substrate processing chamber 500. The controller 560 can also be used to control the actuator 505 to adjust the position of one or more portions of the edge coupling ring 503.

機器臂570及感測器572可用於量測邊緣耦合環之侵蝕。在一些範例中，感測器572可包含深度計。機器臂570可移動深度計與邊緣耦合環相接觸以量測侵蝕。或者，雷射干涉儀（具有或不具有機器臂570）可用於量測侵蝕而沒有直接接觸。若雷射干涉儀可定位為與邊緣耦合環呈直視線，則可省略機器臂570。The robot arm 570 and the sensor 572 can be used to measure the erosion of the edge coupling ring. In some examples, the sensor 572 may include a depth gauge. The robotic arm 570 is in contact with the edge coupling ring to measure erosion. Alternatively, a laser interferometer (with or without a robot arm 570) can be used to measure erosion without direct contact. If the laser interferometer can be positioned in line of sight with the edge coupling ring, the robot arm 570 can be omitted.

現在參考圖10，其顯示用於操作致動器以移動邊緣耦合環之方法600之範例。在步驟610，邊緣耦合環之至少一部分係定位在相對於基板之第一位置中。在步驟614，操作基板處理系統。該操作可包含基板之蝕刻或其它處理。在步驟618，控制件判定是否已進行預定時間之蝕刻、或預定數目之蝕刻循環。如步驟618所判定，若未超過預定時間或循環數目，則控制件返回至步驟614。Referring now to FIG. 10, an example of a method 600 for operating an actuator to move an edge coupling ring is shown. At step 610, at least a portion of the edge coupling ring is positioned in a first position relative to the substrate. At step 614, the substrate processing system is operated. This operation may include etching or other processing of the substrate. In step 618, the control determines whether an etching has been performed for a predetermined time, or a predetermined number of etching cycles. As determined in step 618, if the predetermined time or number of cycles has not been exceeded, the control returns to step 614.

當達到預定時間或循環數目時，控制件在步驟624判定：是否達到最大預定蝕刻時間、是否已進行最大數目之蝕刻循環、及∕或是否致動器已進行最大的移動。When the predetermined time or the number of cycles is reached, the controller determines in step 624: whether the maximum predetermined etching time has been reached, whether the maximum number of etching cycles have been performed, and whether the actuator has performed the maximum movement.

若步驟624為「否」（false），則控制件利用制動器而移動邊緣耦合環之至少一部分。邊緣耦合環之移動可在不打開處理腔室之情況下自動地、手動地、或以其組合方式而執行。若步驟624為「是」（true），則控制件發送訊息或以其它方式指示應該維護∕更換該邊緣耦合環。If step 624 is false, the control uses the brake to move at least a part of the edge coupling ring. The movement of the edge coupling ring can be performed automatically, manually, or a combination thereof without opening the processing chamber. If step 624 is true, the control sends a message or otherwise indicates that the edge coupling ring should be maintained and replaced.

現在參考圖11，其顯示用於操作致動器以移動邊緣耦合環之方法700之範例。在步驟710，邊緣耦合環之至少一部分係定位在相對於基板之第一位置中。在步驟714，操作基板處理系統。該操作可包含基板之蝕刻或其它處理。在步驟718，控制件利用感測器（例如深度計或雷射干涉儀）以判定邊緣耦合環是否已發生預定量之侵蝕。若步驟718為否，則控制件返回至步驟714。Referring now to FIG. 11, an example of a method 700 for operating an actuator to move an edge coupling ring is shown. At step 710, at least a portion of the edge coupling ring is positioned in a first position relative to the substrate. At step 714, the substrate processing system is operated. This operation may include etching or other processing of the substrate. In step 718, the control utilizes a sensor (such as a depth gauge or laser interferometer) to determine if the edge coupling ring has eroded a predetermined amount. If NO in step 718, the control returns to step 714.

當已發生預定量之侵蝕時，控制件在步驟724判定是否已發生最大量之侵蝕。若步驟724為否，則控制件利用致動器而移動邊緣耦合環之至少一部分。邊緣耦合環之移動可在不打開處理腔室的情況下自動地、手動地、或以其組合方式而執行。若步驟724為是，則控制件發送訊息或以其它方式指示應該維護∕更換該邊緣耦合環。When a predetermined amount of erosion has occurred, the control determines whether a maximum amount of erosion has occurred in step 724. If step 724 is no, the control uses the actuator to move at least a portion of the edge coupling ring. The movement of the edge coupling ring may be performed automatically, manually, or a combination thereof without opening the processing chamber. If YES in step 724, the control sends a message or otherwise indicates that the edge coupling ring should be maintained and replaced.

除上述內容外，可基於處理後之基板之蝕刻圖案之檢視而判定是否需要移動邊緣耦合環。致動器可用於在不打開腔室之情形下調整邊緣耦合環之邊緣耦合輪廓。In addition to the above, it can be determined whether the edge coupling ring needs to be moved based on the inspection of the etched pattern of the substrate. The actuator can be used to adjust the edge coupling profile of the edge coupling ring without opening the chamber.

現在參考圖12，處理腔室800包含邊緣耦合環60，其配置在基座20上。邊緣耦合環60包含一或更多部分，該一或更多部分可藉由一或更多致動器804而移動，該一或更多制動器804係配置於處理腔室800外側。在此範例中，部分72係可移動的。致動器804可藉由機械連桿810而連接至邊緣耦合環60之部分72。例如，機械連桿810可包含桿狀構件。機械連桿810可穿過在處理腔室800之壁814中之孔811。可使用密封件812，例如O型環。機械連桿810可穿過在一或更多結構（例如，邊緣耦合環60之部分76）中之孔815。Referring now to FIG. 12, the processing chamber 800 includes an edge coupling ring 60 that is disposed on a base 20. The edge coupling ring 60 includes one or more parts that can be moved by one or more actuators 804 that are disposed outside the processing chamber 800. In this example, the portion 72 is removable. The actuator 804 may be connected to the portion 72 of the edge coupling ring 60 by a mechanical link 810. For example, the mechanical link 810 may include a rod-shaped member. The mechanical link 810 may pass through a hole 811 in the wall 814 of the processing chamber 800. A seal 812 may be used, such as an O-ring. The mechanical link 810 may pass through a hole 815 in one or more structures (eg, portion 76 of the edge coupling ring 60).

現在參考圖13A及13B，其顯示邊緣耦合環830之側邊至側邊的傾斜。側邊至側邊的傾斜可用於校正側邊至側邊的未對準（misalignment）。在圖13A中，邊緣耦合環830之部分830-1及830-2在基板之相反側上、並且配置於第一設置840中。一般而言，部分830-1及830-2可與邊緣耦合環830之部分832-1及832-2對準。致動器836-1及836-2係分別地配置於部分830-1與832-1之間、及830-2與832-2之間。Referring now to FIGS. 13A and 13B, the side-to-side tilt of the edge coupling ring 830 is shown. Side-to-side tilt can be used to correct side-to-side misalignment. In FIG. 13A, portions 830-1 and 830-2 of the edge coupling ring 830 are on the opposite sides of the substrate and are disposed in the first setting 840. In general, portions 830-1 and 830-2 may be aligned with portions 832-1 and 832-2 of edge coupling ring 830. The actuators 835-1 and 836-2 are respectively disposed between portions 830-1 and 832-1 and between 830-2 and 832-2.

在圖13B中，致動器836-1及836-2移動邊緣耦合環830之個別部分，俾使邊緣耦合環830移動至第二設置850，第二設置850與圖13A中所示之第一設置840不同。如可理解，在處理之後可檢視基板，且相對於基板之傾斜可在不打開處理腔室之情形下視需要而調整。In FIG. 13B, the actuators 836-1 and 836-2 move individual parts of the edge coupling ring 830 to move the edge coupling ring 830 to a second setting 850, which is in contrast to the first setting shown in FIG. 13A. The setting is 840 different. As can be understood, the substrate can be inspected after processing, and the tilt relative to the substrate can be adjusted as needed without opening the processing chamber.

現在參考圖14，其顯示在基板處理期間用於移動邊緣耦合環之方法900。換言之，在同一處理腔室中，在單一基板上可執行不同的處理。在繼續進行至後續基板之前，邊緣耦合環之邊緣耦合效果可在同一處理腔室中於基板上所執行之複數處理之間進行調整。在步驟910，使基板定位於基座上，且視需要而調整邊緣耦合環之位置。在步驟914，執行基板之處理。如步驟918所判定，若基板之處理已完成，則在步驟922自基座移除基板。在步驟924，控制件判定是否需要處理另一基板。如步驟924為「是」，則該方法返回至步驟910。否則，該方法終止。Reference is now made to FIG. 14, which illustrates a method 900 for moving an edge coupling ring during substrate processing. In other words, different processes can be performed on a single substrate in the same processing chamber. Before proceeding to the subsequent substrate, the edge coupling effect of the edge coupling ring can be adjusted between multiple processes performed on the substrate in the same processing chamber. In step 910, the substrate is positioned on the base, and the position of the edge coupling ring is adjusted as needed. In step 914, processing of the substrate is performed. As determined in step 918, if the processing of the substrate has been completed, the substrate is removed from the base in step 922. In step 924, the control determines whether another substrate needs to be processed. If YES in step 924, the method returns to step 910. Otherwise, the method terminates.

若步驟918為否，且基板需要額外的處理，則該方法在步驟930判定邊緣耦合環是否需要調整。若步驟930為否，則該方法返回至步驟914。若步驟930為是，則在步驟934使用一或更多致動器而移動邊緣耦合環之至少一部分，然後該方法返回至步驟914。如可理解，邊緣耦合環可在同一處理腔室中同一基板之複數處理之間進行調整。If no in step 918 and the substrate requires additional processing, the method determines in step 930 whether the edge coupling loop needs to be adjusted. If no at step 930, the method returns to step 914. If YES in step 930, at least a portion of the edge coupling ring is moved using one or more actuators in step 934, and the method returns to step 914. As can be appreciated, the edge coupling ring can be adjusted between multiple processes of the same substrate in the same processing chamber.

現在參考圖15，邊緣耦合環1014及抬升環1018係配置於基座1010之上表面附近及周圍。如上所述，邊緣耦合環1014包含徑向內邊緣，在蝕刻期間徑向內邊緣係配置於基板附近。抬升環1018係配置於邊緣耦合環1014之至少一部分下方。當使用機器手臂移除邊緣耦合環1014時，抬升環1018係用以抬升邊緣耦合環1014於基座1010表面之上。可在無需將處理腔室打開至大氣壓力之情形下移除邊緣耦合環1014。在一些範例中，可選地，抬升環1018可包含開放部1019在圓周方向上分隔開的末端1020之間，以提供間隙給機器手臂來移除邊緣耦合環1014，如下所述。Referring now to FIG. 15, the edge coupling ring 1014 and the lifting ring 1018 are disposed near and around the upper surface of the base 1010. As described above, the edge coupling ring 1014 includes a radially inner edge, which is disposed near the substrate during the etching. The lifting ring 1018 is disposed below at least a part of the edge coupling ring 1014. When the robotic arm is used to remove the edge coupling ring 1014, the lifting ring 1018 is used to lift the edge coupling ring 1014 above the surface of the base 1010. The edge coupling ring 1014 can be removed without opening the processing chamber to atmospheric pressure. In some examples, the lifting ring 1018 may optionally include open ends 1019 between the ends 1020 spaced apart in the circumferential direction to provide clearance for the robotic arm to remove the edge coupling ring 1014, as described below.

現在參考圖16-17，更詳細地顯示邊緣耦合環1014及抬升環1018之範例。在圖16所示之範例中，基座可包含靜電夾盤（ESC），其大致標示於1021處。ESC 1021可包含一或更多堆疊的板件，例如ESC板1022、1024、1030、及1032。ESC板1030可對應於中間ESC板，ESC板1032可對應於ESC基底板。在一些範例中，O型環1026可配置於ESC板1024與1030之間。儘管顯示了具體的基座1010，但可使用其它類型的基座。Referring now to FIGS. 16-17, examples of edge coupling rings 1014 and lifting rings 1018 are shown in more detail. In the example shown in FIG. 16, the base may include an electrostatic chuck (ESC), which is generally indicated at 1021. ESC 1021 may include one or more stacked boards, such as ESC boards 1022, 1024, 1030, and 1032. The ESC board 1030 may correspond to an intermediate ESC board, and the ESC board 1032 may correspond to an ESC base board. In some examples, the O-ring 1026 may be configured between the ESC boards 1024 and 1030. Although a specific base 1010 is shown, other types of bases may be used.

底部邊緣耦合環1034可配置於邊緣耦合環1014及抬升環1018下方。底部邊緣耦合環1034可配置於ESC板1024、1030、1032及O型環1026附近及其徑向外側。The bottom edge coupling ring 1034 may be disposed below the edge coupling ring 1014 and the lifting ring 1018. The bottom edge coupling ring 1034 can be disposed near the ESC board 1024, 1030, 1032, and the O-ring 1026 and radially outward thereof.

在一些範例中，邊緣耦合環1014可包含一或更多自我置中（self-centering）特徵部1040、1044、1046。僅做為範例，自我置中特徵部1040及1044可為三角形的、凹形的自我置中特徵部，然而可使用其它形狀。自我置中特徵部1046可為傾斜的表面。抬升環1018可包含一或更多自我置中特徵部1048、1050、1051。僅做為範例，自我置中特徵部1048及1050可為三角形的、凹形的自我置中特徵部，然而可使用其它形狀。自我置中特徵部1051可為傾斜的表面，具有與自我置中特徵部1046互補之形狀。抬升環1018上之自我置中特徵部1048可與邊緣耦合環1014上之自我置中特徵部1044相配合。抬升環1018上之自我置中特徵部1050可與底部邊緣耦合環1034上之自我置中特徵部1052相配合。In some examples, the edge coupling ring 1014 may include one or more self-centering features 1040, 1044, 1046. For example only, the self-centering features 1040 and 1044 may be triangular, concave self-centering features, but other shapes may be used. The self-centering feature 1046 may be an inclined surface. The lifting ring 1018 may include one or more self-centering features 1048, 1050, 1051. For example only, the self-centering features 1048 and 1050 may be triangular, concave self-centering features, but other shapes may be used. The self-centering feature 1051 may be an inclined surface having a shape complementary to the self-centering feature 1046. The self-centering feature 1048 on the lifting ring 1018 can cooperate with the self-centering feature 1044 on the edge coupling ring 1014. The self-centering feature 1050 on the lifting ring 1018 can cooperate with the self-centering feature 1052 on the bottom edge coupling ring 1034.

抬升環1018更包含在徑向上朝外延伸之凸出部1054。溝槽1056可配置在凸出部1054之面向底部的表面1057上。溝槽1056係配置成被支柱1060之一端偏移，支柱1060係連接至致動器1064，並且藉由致動器1064而在垂直方向上選擇性地移動。致動器1064可被控制器所控制。如可理解，儘管顯示單一溝槽、支柱、及致動器，但額外的溝槽、支柱、及致動器可在圓周方向上以分隔開的關係配置在抬升環1018周圍，以使抬升環1018在朝上方向上偏移。The lifting ring 1018 further includes a protrusion 1054 extending outward in the radial direction. The groove 1056 may be disposed on the bottom-facing surface 1057 of the protrusion 1054. The groove 1056 is configured to be offset by one end of a pillar 1060 which is connected to an actuator 1064 and is selectively moved in a vertical direction by the actuator 1064. The actuator 1064 may be controlled by a controller. As can be understood, although a single groove, pillar, and actuator are shown, additional grooves, pillars, and actuators may be arranged around the lifting ring 1018 in a spaced relationship in the circumferential direction to enable lifting The ring 1018 is offset in an upward direction.

在圖17中，邊緣耦合環1014係顯示為使用（複數）支柱1060及（複數）致動器1064、藉由抬升環1018而在朝上方向上抬升。邊緣耦合環1014可藉由機器手臂而從處理腔室移除。具體而言，機器手臂1102藉由支持器1104而連接至邊緣耦合環1014。支持器1104可包含自我置中特徵部1110，自我置中特徵部1110與邊緣耦合環1014上之自我置中特徵部1040相配合。如可理解，機器手臂1102及支持器1104可使邊緣耦合環朝上偏移，以清空在抬升環1018上之自我置中特徵部1048。然後，機器手臂1102、支持器1104、及邊緣耦合環1014可被移出處理腔室。機器手臂1102、支持器1104、及新的邊緣耦合環可返回、並且定位在抬升環1018上。然後，使抬升環1018降低。可使用相反的操作以將新的邊緣耦合環1014傳送至抬升環1018上。In FIG. 17, the edge coupling ring 1014 is shown as being lifted in the upward direction by using the (plural) post 1060 and the (plural) actuator 1064 by the lifting ring 1018. The edge coupling ring 1014 can be removed from the processing chamber by a robotic arm. Specifically, the robot arm 1102 is connected to the edge coupling ring 1014 by a holder 1104. The supporter 1104 may include a self-centering feature 1110 that cooperates with a self-centering feature 1040 on the edge coupling ring 1014. As can be understood, the robotic arm 1102 and the holder 1104 can offset the edge coupling ring upward to clear the self-centering feature 1048 on the lifting ring 1018. The robotic arm 1102, the holder 1104, and the edge coupling ring 1014 can then be removed from the processing chamber. The robotic arm 1102, the holder 1104, and the new edge coupling ring can be returned and positioned on the lifting ring 1018. Then, the lifting ring 1018 is lowered. The reverse operation can be used to transfer the new edge coupling ring 1014 onto the lifting ring 1018.

或者，機器手臂1102及支持器1104可定位在上升的邊緣耦合環1014下方並且與其接觸，而不是朝上抬起機器手臂1102及支持器1104以將邊緣耦合環1014抬離抬升環1018。然後，使抬升環1018降低，且邊緣耦合環1014維持在機器手臂1102及支持器1104上。機器手臂1102、支持器1104、及邊緣耦合環1014可從處理腔室移除。可使用相反的操作以將新的邊緣耦合環1014傳送至抬升環1018上。Alternatively, the robot arm 1102 and the holder 1104 may be positioned under and in contact with the rising edge coupling ring 1014 instead of lifting the robot arm 1102 and the holder 1104 upward to lift the edge coupling ring 1014 off the lifting ring 1018. Then, the lifting ring 1018 is lowered, and the edge coupling ring 1014 is maintained on the robot arm 1102 and the holder 1104. The robotic arm 1102, the holder 1104, and the edge coupling ring 1014 can be removed from the processing chamber. The reverse operation can be used to transfer the new edge coupling ring 1014 onto the lifting ring 1018.

現在參考圖18-20，顯示可移動式邊緣耦合環1238及抬升環1018。在圖18中，一或更多支柱1210藉由一或更多致動器1214透過孔1220、1224、1228而上下移動，孔1220、1224、1228分別位於ESC基底板1032、底部邊緣耦合環1034、及抬升環1018中。在此範例中，中間邊緣耦合環1240或間隔件係配置於可移動式邊緣耦合環1238與抬升環1018之間。中間邊緣耦合環1240可包含自我置中特徵部1244及1246。對應的自我置中特徵部1248可設置於可移動式邊緣耦合環1238上。自我置中特徵部1248與中間邊緣耦合環1240上之自我置中特徵部1246相配合。Referring now to FIGS. 18-20, a movable edge coupling ring 1238 and a lifting ring 1018 are shown. In FIG. 18, one or more pillars 1210 are moved up and down by one or more actuators 1214 through holes 1220, 1224, 1228. The holes 1220, 1224, and 1228 are respectively located on the ESC base plate 1032, the bottom edge coupling ring 1034 , And lifting ring 1018. In this example, the middle edge coupling ring 1240 or the spacer is disposed between the movable edge coupling ring 1238 and the lifting ring 1018. The middle edge coupling ring 1240 may include self-centering features 1244 and 1246. The corresponding self-centering feature 1248 can be disposed on the movable edge coupling ring 1238. The self-centering feature 1248 cooperates with the self-centering feature 1246 on the middle edge coupling ring 1240.

如以上所詳述，在使用期間，可移動式邊緣耦合環1238之朝上表面可能發生侵蝕。接著，這可能改變電漿之輪廓。使用支柱1210及致動器1214可使可移動式邊緣耦合環1238在朝上方向上選擇性地移動，以改變電漿之輪廓。在圖19中，圖18之可移動式邊緣耦合環1238係顯示於上升位置中。中間邊緣耦合環1240可保持不動。最後，可移動式邊緣耦合環1238可能被移動一或更多次，接著可更換邊緣耦合環1238及中間邊緣耦合環1240。As detailed above, during use, the upward facing surface of the movable edge coupling ring 1238 may erode. This, in turn, may change the profile of the plasma. The use of the pillar 1210 and the actuator 1214 can selectively move the movable edge coupling ring 1238 in an upward direction to change the contour of the plasma. In Fig. 19, the movable edge coupling ring 1238 of Fig. 18 is shown in the raised position. The middle edge coupling ring 1240 can remain stationary. Finally, the movable edge coupling ring 1238 may be moved one or more times, and then the edge coupling ring 1238 and the middle edge coupling ring 1240 may be replaced.

在圖20中，使致動器1214返回至降低的狀態，且使致動器1064移動至上升的狀態。邊緣耦合環1238及中間邊緣耦合環1240係藉由抬升環1018而抬升，並且可藉由機器手臂1102及支持器1104而移除可移動式邊緣耦合環1238。In FIG. 20, the actuator 1214 is returned to the lowered state, and the actuator 1064 is moved to the raised state. The edge coupling ring 1238 and the middle edge coupling ring 1240 are lifted by the lifting ring 1018, and the movable edge coupling ring 1238 can be removed by the robot arm 1102 and the holder 1104.

如可理解，致動器可設置於處理腔室中、或處理腔室外側。在一些範例中，邊緣耦合環可經由卡匣、裝載室、轉移腔室及類似物而提供至腔室。或者，邊緣耦合環可儲存於處理腔室之外側，但在基板處理工具之內側。As can be understood, the actuator may be disposed in the processing chamber or outside the processing chamber. In some examples, the edge coupling ring may be provided to the chamber via a cassette, a loading chamber, a transfer chamber, and the like. Alternatively, the edge coupling ring may be stored outside the processing chamber, but inside the substrate processing tool.

現在參考圖21-22，在一些範例中，可省略抬升環。邊緣耦合環1310係配置在底部邊緣耦合環1034及基座之徑向外邊緣上。邊緣耦合環1310可包含一或更多自我置中特徵部1316及1320。邊緣耦合環1310可更包含用以接收支柱1210頂表面之溝槽1324，支柱1210係藉由致動器1214而偏移。自我置中特徵部1320可配置為靠著底部邊緣耦合環1034之相對應的自我置中特徵部1326。在一些範例中，自我置中特徵部1320及1326為斜面。Referring now to FIGS. 21-22, in some examples, the lifting ring may be omitted. The edge coupling ring 1310 is disposed on the bottom edge coupling ring 1034 and the radial outer edge of the base. The edge coupling ring 1310 may include one or more self-centering features 1316 and 1320. The edge coupling ring 1310 may further include a groove 1324 for receiving the top surface of the pillar 1210, and the pillar 1210 is offset by the actuator 1214. The self-centering feature 1320 may be configured to correspond to the corresponding self-centering feature 1326 of the bottom edge coupling ring 1034. In some examples, the self-centering features 1320 and 1326 are beveled.

在圖22中，致動器1214及支柱1210使邊緣耦合環1310向上偏移，以在發生侵蝕之後移除邊緣耦合環1310或調整電漿輪廓。可使機器手臂1102及支持器1104移動至邊緣耦合環1310下方之位置。連接至機器手臂1102之支持器1104上之自我置中特徵部1110可接合自我置中特徵部1316。機器手臂1102在朝上方向上移動以提供溝槽1324與支柱1210之間之間隙，或者藉由致動器1214使支柱1210朝下移動以提供間隙給溝槽1324。In FIG. 22, the actuator 1214 and the pillar 1210 offset the edge coupling ring 1310 upward to remove the edge coupling ring 1310 or adjust the plasma profile after erosion occurs. The robot arm 1102 and the holder 1104 can be moved to a position below the edge coupling ring 1310. The self-centering feature 1110 on the holder 1104 connected to the robot arm 1102 can engage the self-centering feature 1316. The robot arm 1102 moves in an upward direction to provide a gap between the groove 1324 and the pillar 1210, or moves the pillar 1210 downward by an actuator 1214 to provide a gap to the groove 1324.

現在參考圖23，顯示在無需將處理腔室打開至大氣壓力之情形下更換邊緣耦合環之方法1400。在步驟1404，該方法判定邊緣耦合環是否位於抬升環上。若步驟1404為否，該方法在步驟1408使用機器手臂以將邊緣耦合環移動至在抬升環上之位置。在邊緣耦合環位於處理腔室中之抬升環上之後，在步驟1410執行處理。在步驟1412，該方法使用上述標準其中任一者來判定邊緣耦合環是否磨損。若步驟1412為否，該方法返回至步驟1410，並且可再次執行處理。若在步驟1412邊緣耦合環被判定為磨損，則在步驟1416更換邊緣耦合環，並且該方法於步驟1410繼續進行。Referring now to FIG. 23, a method 1400 for replacing an edge coupling ring without opening the processing chamber to atmospheric pressure is shown. At step 1404, the method determines whether the edge coupling ring is located on the lifting ring. If no at step 1404, the method uses a robotic arm at step 1408 to move the edge coupling ring to a position on the lifting ring. After the edge coupling ring is on the lifting ring in the processing chamber, processing is performed at step 1410. At step 1412, the method uses any of the above criteria to determine if the edge coupling ring is worn. If no at step 1412, the method returns to step 1410 and processing can be performed again. If the edge coupling ring is determined to be worn at step 1412, the edge coupling ring is replaced at step 1416, and the method continues at step 1410.

現在參考圖24，方法1500視需要而調整可移動式邊緣耦合環之位置以補償侵蝕，並且當可移動式邊緣耦合環被判定為磨損時，選擇性地更換可移動式邊緣耦合環。在步驟1502，該方法判定可移動式邊緣耦合環是否位於抬升環上。若步驟1502為否，則在步驟1504將邊緣耦合環移動至在抬升環上之位置，且該方法於步驟1502繼續進行。Referring now to FIG. 24, the method 1500 adjusts the position of the movable edge coupling ring as necessary to compensate for erosion, and selectively replaces the movable edge coupling ring when the movable edge coupling ring is determined to be worn. In step 1502, the method determines whether the movable edge coupling ring is located on the lifting ring. If no at step 1502, the edge coupling ring is moved to the position on the lifting ring at step 1504, and the method continues at step 1502.

若步驟1502為是，則該方法在步驟1506判定可移動式邊緣耦合環之位置是否需要調整。若步驟1506為是，則該方法使用致動器而調整可移動式邊緣耦合環之位置，然後該方法返回至步驟1506。當步驟1506為否，該方法在步驟1510執行處理。在步驟1512，該方法判定可移動式邊緣耦合環是否磨損。若否，則該方法返回至步驟1510。If YES in step 1502, the method determines in step 1506 whether the position of the movable edge coupling ring needs to be adjusted. If YES in step 1506, the method uses an actuator to adjust the position of the movable edge coupling ring, and then the method returns to step 1506. When No at step 1506, the method performs processing at step 1510. At step 1512, the method determines if the movable edge coupling ring is worn. If not, the method returns to step 1510.

若步驟1512為是，則該方法在步驟1520判定可移動式邊緣耦合環是否處於最高（或完全調整）位置中。若步驟1520為否，則該方法在步驟1524使用致動器1214而調整可移動式邊緣耦合環之位置，且該方法返回至步驟1510。若步驟1520為是，則該方法使用致動器1064、抬升環1018及機器手臂1102以更換可移動式邊緣耦合環。If YES in step 1512, the method determines in step 1520 whether the movable edge coupling ring is in the highest (or fully adjusted) position. If no at step 1520, the method uses the actuator 1214 to adjust the position of the movable edge coupling ring at step 1524, and the method returns to step 1510. If YES in step 1520, the method uses an actuator 1064, a lifting ring 1018, and a robot arm 1102 to replace the movable edge coupling ring.

現在參考圖25，顯示在無需將處理腔室打開至大氣壓力之情形下更換邊緣耦合環之方法1600。在步驟1610，使用致動器而使抬升環及邊緣耦合環向上偏移。在步驟1620，使機器手臂及支持器在邊緣耦合環下方移動。在步驟1624，使機器手臂朝上移動，以清空邊緣耦合環之自我置中特徵部，或者使抬升環朝下移動。在步驟1628，使具有邊緣耦合環之機器手臂移出處理腔室。在步驟1632，使邊緣耦合環從機器手臂分離。在步驟1636，機器手臂拿取更換邊緣耦合環。在步驟1638，將邊緣耦合環定位在抬升環上，並且使用一或更多自我置中特徵部而對準。在步驟1642，使機器手臂降低，以使自我置中特徵部具有足夠的間隙，並且從腔室移除機器手臂。在步驟1646，使抬升環及邊緣耦合環降低至位置中。Referring now to FIG. 25, a method 1600 of replacing an edge coupling ring without opening the processing chamber to atmospheric pressure is shown. At step 1610, the lift ring and edge coupling ring are offset upward using an actuator. At step 1620, the robot arm and the holder are moved below the edge coupling ring. In step 1624, the robot arm is moved upward to clear the self-centering feature of the edge coupling ring, or the lifting ring is moved downward. At step 1628, the robotic arm with the edge coupling ring is removed from the processing chamber. At step 1632, the edge coupling ring is detached from the robotic arm. At step 1636, the robotic arm takes the replacement edge coupling ring. At step 1638, the edge coupling ring is positioned on the lifting ring and aligned using one or more self-centering features. At step 1642, the robotic arm is lowered to provide sufficient clearance for the self-centering feature, and the robotic arm is removed from the chamber. At step 1646, the lifting ring and edge coupling ring are lowered into position.

現在參考圖26，將描述邊緣耦合環狀況及位置之偵測之特徵。此部分的描述聚焦於根據本發明之特徵之偵測器及偵測方法，能夠直接量測邊緣耦合環之高度及侵蝕。先前已經提出處理腔室之各種元件之細節，包括ESC、邊緣耦合環、控制器及致動器，為了簡潔及清楚之目的，此處將不再重複。Referring now to FIG. 26, the characteristics of the edge coupling loop condition and position detection will be described. The description in this section focuses on the detector and detection method according to the features of the present invention, which can directly measure the height and erosion of the edge coupling ring. Details of the various components of the processing chamber, including ESC, edge coupling ring, controller, and actuator, have previously been proposed, and for the sake of brevity and clarity, they will not be repeated here.

在圖26中，處理腔室1710具有窗口1715，窗口1715位於腔室頂部上方。在腔室1710中之基座1720具有靜電夾盤（ESC）1725安裝於其上。鄰近ESC 1725的是致動器機構1730, 1735，致動器機構1730, 1735使邊緣耦合環1740在水平及∕或垂直方向上移動，如先前所述。致動器機構1730, 1735其中一者或兩者可安裝如關於先前圖式之所述。晶圓1750係定位於ESC 1725上、在邊緣耦合環1740內。In FIG. 26, the processing chamber 1710 has a window 1715, which is located above the top of the chamber. The base 1720 in the chamber 1710 has an electrostatic chuck (ESC) 1725 mounted thereon. Adjacent to the ESC 1725 are actuator mechanisms 1730, 1735, which move the edge coupling ring 1740 in the horizontal and ∕ or vertical directions, as previously described. Either or both of the actuator mechanisms 1730, 1735 may be mounted as described in relation to the previous drawings. Wafer 1750 is positioned on ESC 1725 within edge coupling ring 1740.

攝影機1760係安裝在附接機構1765上，以透過在腔室1710中之側視窗1770而觀看邊緣耦合環1740。附接機構1765可為托架、對接機構、或其它使攝影機1760能夠相對於側視窗1770而在垂直及∕或水平方向上移動之合適的附接機構，並且使攝影機1760能夠適當對焦於邊緣耦合環1740之適當部分。在一特徵中，側視窗1770包含擋板1775，以在晶圓處理期間保護窗中之材料。在一特徵中，使用氣動閘閥以操作擋板1775。A camera 1760 is mounted on the attachment mechanism 1765 to view the edge coupling ring 1740 through a side window 1770 in the chamber 1710. The attachment mechanism 1765 may be a bracket, a docking mechanism, or other suitable attachment mechanism that enables the camera 1760 to move vertically and horizontally or horizontally relative to the side window 1770, and enables the camera 1760 to properly focus on the edge coupling. The appropriate part of the ring 1740. In one feature, the side window 1770 includes a baffle 1775 to protect the material in the window during wafer processing. In one feature, a pneumatic gate valve is used to operate the baffle 1775.

在一特徵中，如所示，附接機構1765將攝影機1760安裝在腔室1710上。在另一特徵中，附接機構1765將攝影機1760安裝在靠近腔室1710之結構上。In one feature, as shown, the attachment mechanism 1765 mounts a camera 1760 on the cavity 1710. In another feature, the attachment mechanism 1765 mounts the camera 1760 on a structure near the chamber 1710.

在一些特徵中，控制器（顯示在先前的圖式中）控制攝影機1760之致動、對焦及定位。在一些特徵中，不同的控制器1800提供攝影機之致動、對焦及定位其中一或多者。在一些特徵中，攝影機本身提供自己的對焦機構，但本文中所述之該等控制器其中一者基於所提供之影像之個別分析而補充攝影機自己的對焦。In some features, the controller (shown in the previous figure) controls the actuation, focus, and positioning of the camera 1760. In some features, different controllers 1800 provide one or more of camera activation, focusing, and positioning. In some features, the camera itself provides its own focus mechanism, but one of the controllers described herein supplements the camera's own focus based on individual analysis of the images provided.

在其它特徵中，攝影機1760係安裝而容許透過窗口1715觀看。在圖26中，攝影機1760係顯示為對焦在邊緣耦合環1740之內邊緣。邊緣耦合環1740係描繪為處於新的狀態，在安裝於腔室1710中的時候。Among other features, the camera 1760 is mounted to allow viewing through a window 1715. In FIG. 26, the camera 1760 is shown focused on the inner edge of the edge coupling ring 1740. The edge coupling ring 1740 is depicted in a new state when installed in the cavity 1710.

攝影機1760具有足夠的解析度（例如，像素數目）以產生具有合適大小之影像，而能夠判定邊緣耦合環1740之狀況及位置，並且提供環高度及環侵蝕之直接量測。在一些特徵中，攝影機操作於微距（特寫）模式，使用微距鏡頭。在其它特徵中，鏡頭可為提供適當倍率之光學變焦鏡頭。能夠產生足夠的資訊（例如，影像）以判定環狀況及位置之像素數目與倍率（微距、光學變焦或數位變焦，在一些特徵中）之任何組合將是可接受的。在一些特徵中，可使用高動態範圍（HDR）成像並結合微距及∕或變焦攝影以操作攝影機1760。The camera 1760 has sufficient resolution (eg, the number of pixels) to produce an image of a suitable size, can determine the condition and position of the edge coupling ring 1740, and provides a direct measurement of ring height and ring erosion. In some features, the camera operates in a macro (close-up) mode, using a macro lens. Among other features, the lens may be an optical zoom lens that provides an appropriate magnification. Any combination of number of pixels and magnification (macro, optical zoom, or digital zoom, among some features) capable of generating sufficient information (e.g., images) to determine the condition and location of the ring will be acceptable. In some features, high dynamic range (HDR) imaging can be used in conjunction with macro and pan or zoom photography to operate the camera 1760.

在一特徵中，為了有足夠的光在腔室1710中以照亮邊緣環1740，電漿光是足夠好的。在其它特徵中，提供外部光源，例如發光二極體（LED）光源。在圖27中，除了圖26所繪示之元件之外，在一些特徵中，外部照明設備1780提供光照於腔室1710內。在一特徵中，如所示，附接機構1785將照明設備1780安裝在腔室1710上。在另一特徵中，附接機構1785將照明設備1780安裝在靠近腔室1710之結構上。在一特徵中，照明設備1780係附接於攝影機1760。根據各種特徵，該附接為機械式、或電力式、或兩者。在一些特徵中，提供額外的側視窗1790，照明設備1780透過側視窗1790而將光照射至腔室1710中。附接機構1785可為托架、對接機構、或其它使照明設備1780能夠相對於側視窗1790而在垂直及∕或水平方向上移動之合適的附接機構。在一些特徵中，額外的側視窗1790與側視窗1770在腔室1710之相同側上。在其它特徵中，額外的側視窗1790與側視窗1770在腔室1710之不同側上。在一特徵中，側視窗1790包含擋板1795，以在晶圓處理期間保護窗中之材料。在一特徵中，使用氣動閘閥以操作擋板1795。在又一其它特徵中，照明設備1780透過與攝影機1760相同的側視窗1770而照射光，在此例子中不需要個別的側視窗1790。In one feature, in order to have enough light in the cavity 1710 to illuminate the edge ring 1740, the plasma light is good enough. In other features, an external light source is provided, such as a light emitting diode (LED) light source. In FIG. 27, in addition to the elements shown in FIG. 26, in some features, the external lighting device 1780 provides light inside the cavity 1710. In one feature, as shown, the attachment mechanism 1785 mounts the lighting device 1780 on the cavity 1710. In another feature, the attachment mechanism 1785 mounts the lighting device 1780 on a structure near the chamber 1710. In one feature, the lighting device 1780 is attached to the camera 1760. According to various features, the attachment is mechanical, or electric, or both. In some features, an additional side window 1790 is provided, and the lighting device 1780 shines light into the chamber 1710 through the side window 1790. The attachment mechanism 1785 may be a bracket, a docking mechanism, or other suitable attachment mechanism that enables the lighting device 1780 to move in vertical and horizontal or horizontal directions relative to the side window 1790. In some features, the additional side window 1790 is on the same side of the chamber 1710 as the side window 1770. In other features, additional side windows 1790 and side windows 1770 are on different sides of the cavity 1710. In one feature, the side window 1790 includes a baffle 1795 to protect the material in the window during wafer processing. In one feature, a pneumatic gate valve is used to operate the baffle 1795. In still other features, the lighting device 1780 illuminates light through the same side window 1770 as the camera 1760, and a separate side window 1790 is not required in this example.

為了容易分別繪示兩個側視窗1770, 1790，在圖27中之腔室1710被描繪為略高於在圖26中，但在一些特徵中，在兩個圖式中之腔室具有相同的大小。若使用電漿光做為光源，則不需要額外的側視窗1790。In order to easily show the two side windows 1770, 1790 separately, the cavity 1710 in FIG. 27 is depicted as slightly higher than in FIG. 26, but in some features, the cavity in the two drawings has the same size. If plasma light is used as the light source, no additional side window 1790 is required.

在操作中，攝影機1760之對焦及∕或定位可能漂移。在一特徵中，控制器1800監控攝影機1760之對焦及∕或定位，並且進行適當的調整。In operation, the focus and / or positioning of the camera 1760 may drift. In one feature, the controller 1800 monitors the focus and / or positioning of the camera 1760 and makes appropriate adjustments.

圖28具有所有與圖27相同的元件，除了邊緣耦合環1740’被顯示為受到侵蝕，而內徑短於外徑。如先前所述，當晶圓處理系統處理越來越多晶圓時，此侵蝕或蝕刻發生。亦如先前所述，若攝影機1760提供之影像顯示邊緣耦合環侵蝕太多而不能執行其控制在晶圓邊緣之蝕刻之功能時，控制器560控制致動器1730, 1735其中一者或兩者以適度地在垂直方向上移動邊緣耦合環1740’。在一特徵中，控制器560及1800彼此通訊，俾使控制器560回應來自控制器1800之影像資料而操作適當的致動器。Fig. 28 has all the same elements as Fig. 27 except that the edge coupling ring 1740 'is shown as eroded and the inside diameter is shorter than the outside diameter. As mentioned previously, this erosion or etch occurs as the wafer processing system processes more and more wafers. As also mentioned previously, if the image provided by the camera 1760 shows that the edge coupling ring has eroded too much to perform its function of controlling the etching on the wafer edge, the controller 560 controls one or both of the actuators 1730, 1735 The edge coupling ring 1740 'is moved moderately in the vertical direction. In one feature, the controllers 560 and 1800 communicate with each other, causing the controller 560 to operate the appropriate actuator in response to the image data from the controller 1800.

圖29A為圖15之俯視圖中所示之襯套1012中之開口1015之放大圖。開口出現在襯套之側視圖中。襯套1012做為固定參考物，攝影機可對焦於其上以拍攝邊緣耦合環之位置及狀況之影像。FIG. 29A is an enlarged view of the opening 1015 in the bushing 1012 shown in the top view of FIG. 15. The opening appears in the side view of the bushing. The bushing 1012 is used as a fixed reference, and the camera can focus on it to take an image of the position and condition of the edge coupling ring.

圖29B及29C分別顯示良好及不良的邊緣耦合環置放之影像，相對於在襯套1012中之開口1015。在這些圖式中，邊緣耦合環係在每一影像之底部。在每一圖式中之暗色部分是開口1015之部分。暗色部分之高度之一致性表示置放之品質。在一特徵中，藉由在暗色部分之中央處、沿著垂直軸而計算垂直暗色像素之數目，以判定暗色部分之高度。在圖29B中，暗色部分之高度及這些部分之大小是相對均等的，表示邊緣耦合環係適當地置放。在圖29C中，暗色部分之高度不一致，且在圖式之右手側之暗色部分之高度相對較矮，表示邊緣耦合環是傾斜的。Figures 29B and 29C show images of good and bad edge coupling ring placement, respectively, relative to the opening 1015 in the bushing 1012. In these drawings, the edge coupling ring is at the bottom of each image. The dark portion in each drawing is the portion of the opening 1015. The consistency of the height of the dark parts indicates the quality of placement. In one feature, the number of vertical dark pixels is calculated along the vertical axis at the center of the dark portion to determine the height of the dark portion. In FIG. 29B, the height of the dark portions and the sizes of these portions are relatively equal, indicating that the edge coupling ring system is properly placed. In FIG. 29C, the height of the dark portion is not consistent, and the height of the dark portion on the right-hand side of the drawing is relatively short, indicating that the edge coupling ring is inclined.

圖30A-C顯示在腔室中所拍攝之原始影像，具有邊緣耦合環1740之各種高度及狀況。圖30A顯示新的邊緣耦合環之狀況，具有3.0、3.2、3.4、3.6、3.8及4.0 mm之高度，如六個影像中所見，六個影像並排放置而形成圖30A。圖30B顯示磨損的邊緣耦合環在重新校正及上升之前之狀況，在如圖30A中之相同高度處。圖30C顯示磨損的邊緣耦合環在重新校正及上升之後之狀況，在如圖30A及30B中之相同高度處。Figures 30A-C show the original images taken in the chamber with various heights and conditions of the edge coupling ring 1740. Figure 30A shows the condition of the new edge coupling ring, with heights of 3.0, 3.2, 3.4, 3.6, 3.8, and 4.0 mm. As seen in the six images, the six images are placed side by side to form Figure 30A. Figure 30B shows the condition of the worn edge coupling ring before recalibration and ascent, at the same height as in Figure 30A. Figure 30C shows the condition of the worn edge coupling ring after recalibration and ascent, at the same height as in Figures 30A and 30B.

在一特徵中，例如圖30A-30C中所示之原始影像可在第一例子中用於校正攝影機，此係藉由查看數個不同的環高度及環狀況，再使用在圖15之襯套1012中之開口1015做為固定參考物。在一特徵中，校正之執行可如下。最初，當安裝了新的邊緣耦合環，可在數個不同的環高度拍攝影像，例如，使用一或更多致動器以抬升或降低該環。量測該環之不同高度（以像素）、並且比較那些量測結果與實體量測結果而提供估計方法，以使轉換邊緣感測器（transition edge sensor，TES）能夠校正，及藉此校正攝影機。校正可能有助於處理攝影機漂移，不論是在焦點、或在焦距（倍率程度）上。倍率之漂移，例如，可導致高度量測結果之改變，此係因為在像素數目與mm數目之間之關聯性之改變。In one feature, for example, the original images shown in FIGS. 30A-30C can be used to calibrate the camera in the first example. This is done by looking at several different ring heights and ring conditions, and then using the bushing in FIG. The opening 1015 in 1012 is used as a fixed reference. In one feature, the correction can be performed as follows. Initially, when a new edge coupling ring was installed, images could be taken at several different ring heights, for example, using one or more actuators to raise or lower the ring. Measure different heights (in pixels) of the ring and compare those measurements with physical measurements to provide an estimation method so that the transition edge sensor (TES) can be calibrated and the camera can be calibrated by this . Correction may help deal with camera drift, either in focus or in focus (magnification level). The drift of the magnification, for example, may cause a change in the height measurement result, because of the change in the correlation between the number of pixels and the number of mm.

圖31描繪直接量測邊緣耦合環之侵蝕之另一方式。在圖26-28中，攝影機1760係直接對準在邊緣耦合環之內邊緣。然而，以此觀看方式，攝影機可能傾向於提供邊緣耦合環之整個上表面之影像，因此可能隱藏或遮蔽實際的侵蝕量。邊緣耦合環內邊緣之高度變得難以量測，因為難以區分邊緣與環之上表面之其餘部分。影像可能呈現模糊。清楚地觀看前邊緣是令人期望的，以便量測其高度（以像素數目、轉換至高度單位，例如mm），並且藉此判定侵蝕之程度。Figure 31 depicts another way to directly measure the erosion of the edge coupling ring. In Figures 26-28, the camera 1760 is aligned directly on the inner edge of the edge coupling ring. However, in this viewing mode, the camera may tend to provide an image of the entire upper surface of the edge coupling ring, and therefore may hide or obscure the actual amount of erosion. The height of the inner edge of the edge coupling ring becomes difficult to measure because it is difficult to distinguish the edge from the rest of the surface above the ring. Images may appear blurry. It is desirable to see the leading edge clearly in order to measure its height (in number of pixels, converted to a height unit, such as mm), and use this to determine the extent of erosion.

為此目的，在圖31中，攝影機1760可獲得邊緣耦合環之內部之反射，而不是直接觀察邊緣耦合環之內部。反射可來自於ESC 1725之表面、或來自晶圓1750之表面。任一或兩表面可能具有反射特性。觀察該反射，接著，攝影機1760獲得邊緣耦合環1840之反射1840’。（虛線顯示受侵蝕的部分1845及其“反射＂1845”。）For this purpose, in FIG. 31, the camera 1760 can obtain the reflection inside the edge coupling ring, instead of looking directly at the inside of the edge coupling ring. The reflection can come from the surface of ESC 1725 or from the surface of wafer 1750. Either or both surfaces may have reflective properties. Observing the reflection, the camera 1760 obtains the reflection 1840 'of the edge coupling ring 1840. (The dashed line shows the eroded portion 1845 and its "reflection" 1845.)

藉由觀看邊緣耦合環之反射而不是觀看環本身，避免了透視的問題。邊緣耦合環之內邊緣之高度可直接量測，以便，在一些例子中，更清楚地判定邊緣耦合環之狀況。By looking at the reflection of the edge coupling ring rather than the ring itself, the problem of perspective is avoided. The height of the inner edge of the edge coupling ring can be directly measured so that, in some examples, the condition of the edge coupling ring can be more clearly determined.

環侵蝕之可偵測性可能具有限制，甚至是從觀察邊緣耦合環之反射亦然。因為侵蝕發生在邊緣耦合環之內側，所以侵蝕減少了環之內邊緣相對於外邊緣之高度。減少越多，環之上表面實際上傾斜之程度越大。在某些時候，“傾斜”之程度可能很大，以至於難以在反射中區分出環之內邊緣，從而難以量測該內邊緣之高度，且因此難以量測侵蝕之程度。無法判定侵蝕程度可能會導致在使用致動器調整環高度時太快或太慢，或甚至更換環。結果，邊緣耦合環將太快被更換，從而浪費環之使用壽命，或者環將被抬升或更換得太晚，導致在晶片之徑向外邊緣附近之蝕刻輪廓之變化。在一特徵中，隨著侵蝕之進行，增加攝影機1760觀看反射影像之角度可以進行補償。The detectability of ring erosion may be limited, even from the reflection of the coupling ring from the viewing edge. Since erosion occurs inside the edge coupling ring, erosion reduces the height of the inner edge of the ring relative to the outer edge. The more it decreases, the more the surface above the ring actually slopes. At some times, the degree of "tilt" may be so great that it is difficult to distinguish the inner edge of the ring in the reflection, making it difficult to measure the height of the inner edge, and therefore the degree of erosion. Failure to determine the extent of erosion may result in too fast or too slow ring adjustments with the actuator, or even ring replacement. As a result, the edge coupling ring will be replaced too quickly, thereby wasting the life of the ring, or the ring will be lifted or replaced too late, resulting in a change in the etch profile near the radially outer edge of the wafer. In one feature, as the erosion progresses, increasing the angle at which the camera 1760 views the reflected image can compensate.

圖32描繪使用來自攝影機之影像以安置邊緣耦合環之方法。 在方法開始於步驟1910之後，在步驟1920，機器臂將邊緣耦合環安裝在ESC上。 在步驟1930，攝影機對焦以辨識環之內邊緣。如先前所述，攝影機可對焦在邊緣耦合環之內邊緣上、或者對焦在ESC或晶圓上之環之反射上。Figure 32 depicts a method of using an image from a camera to place an edge coupling ring. After the method starts at step 1910, at step 1920, the robot arm mounts the edge coupling ring on the ESC. In step 1930, the camera focuses to identify the inner edge of the ring. As mentioned earlier, the camera can focus on the inner edge of the edge coupling ring, or on the reflection of the ring on the ESC or wafer.

在步驟1940，攝影機拍攝邊緣耦合環相對於固定參考物（例如，圖15之抬升環）之影像。 在步驟1950，對影像進行處理及分析，以判定環是否在垂直方向上對準，亦即，在邊緣耦合環中是否存在任何傾斜（例如，如圖29B中所示）。如果存在傾斜，則在步驟1955，控制器560控制一或更多致動器以補償傾斜，且該方法返回到步驟1940以獲得更多影像並且再次檢查（在步驟1950）是否仍然存在傾斜。In step 1940, the camera captures an image of the edge coupling ring relative to a fixed reference (eg, the lifting ring of FIG. 15). At step 1950, the image is processed and analyzed to determine whether the ring is aligned in the vertical direction, that is, if there is any tilt in the edge coupling ring (for example, as shown in Figure 29B). If there is a tilt, the controller 560 controls one or more actuators to compensate for the tilt at step 1955, and the method returns to step 1940 to obtain more images and checks again (at step 1950) if the tilt still exists.

若邊緣耦合環沒有傾斜，則在步驟1960再次使用所獲得之影像，以判定邊緣耦合環是否處於正確的高度。若環不處於正確的高度，則在步驟1965，控制器560控制一或更多垂直致動器以校正高度，且該方法返回到步驟1940以獲得更多影像並且再次檢查（在步驟1960）邊緣耦合環是否處於正確的高度。 在一特徵中，若已經調整了傾斜，則可以略過步驟1950，且該方法可以直接從步驟1940進行至步驟1960。在另一特徵中，藉由將步驟1950及步驟1960結合成單一分析，將步驟1955及步驟1965結合成單一處理，控制器560在單一動作中控制垂直致動器，可在單一步驟中量測及調整傾斜及高度。If the edge coupling ring is not tilted, the acquired image is used again in step 1960 to determine whether the edge coupling ring is at the correct height. If the ring is not at the correct height, in step 1965, the controller 560 controls one or more vertical actuators to correct the height, and the method returns to step 1940 to obtain more images and check (at step 1960) the edges again Whether the coupling ring is at the correct height. In one feature, if the tilt has been adjusted, step 1950 can be skipped, and the method can proceed directly from step 1940 to step 1960. In another feature, by combining steps 1950 and 1960 into a single analysis and combining steps 1955 and 1965 into a single process, the controller 560 controls the vertical actuator in a single action and can measure in a single step And adjust tilt and height.

一旦邊緣耦合環處於適當的高度及垂直對準，則在步驟1970判定邊緣耦合環是否在ESC上水平對準。如果它不是水平對準，則在步驟1975，控制器560使一或更多水平致動器移動邊緣耦合環，於是該方法返回到步驟1940以獲得更多影像並且再次檢查（在步驟1970）邊緣耦合環是否水平對準。在一特徵中，若已經調整了垂直對準，則可以略過步驟1950及1960，且該方法可以直接從步驟1940進行至步驟1970。Once the edge coupling ring is at an appropriate height and vertically aligned, it is determined at step 1970 whether the edge coupling ring is aligned horizontally on the ESC. If it is not horizontally aligned, the controller 560 moves one or more horizontal actuators to move the edge coupling ring in step 1975, so the method returns to step 1940 to obtain more images and check (at step 1970) the edge again Whether the coupling ring is aligned horizontally. In one feature, if the vertical alignment has been adjusted, steps 1950 and 1960 can be skipped, and the method can proceed directly from step 1940 to step 1970.

在圖32所繪示之方法中，垂直對準及水平對準不需要以所指出之順序加以判定。順序可以顛倒，而首先調整水平對準，接著進行垂直對準。在一特徵中，控制器560可接收關於邊緣耦合環之定位之所有資訊，並且立刻控制多個致動器以將邊緣耦合環對準。根據此特徵，步驟1950、1960及1970可結合成單一分析，步驟1955、1965及1975可結合成一處理。In the method shown in FIG. 32, vertical alignment and horizontal alignment need not be determined in the order indicated. The order can be reversed, with horizontal alignment adjusted first, followed by vertical alignment. In one feature, the controller 560 may receive all information regarding the positioning of the edge coupling ring and immediately control multiple actuators to align the edge coupling ring. Based on this feature, steps 1950, 1960, and 1970 can be combined into a single analysis, and steps 1955, 1965, and 1975 can be combined into a single process.

圖33描繪了使用來自攝影機之影像以調整邊緣耦合環之方法。在該方法開始於步驟2010之後，在步驟2020，判定自安裝環以及晶片處理開始以來是否已經經過了預定時間。若為否，則方法返回到步驟2020以查看是否已經經過了預定時間。Figure 33 depicts a method for adjusting the edge coupling ring using images from a camera. After the method starts at step 2010, at step 2020, it is determined whether a predetermined time has passed since the mounting of the ring and the start of the wafer processing. If not, the method returns to step 2020 to see if the predetermined time has elapsed.

在一特徵中，不是等待預定時間，而是在步驟2020判定是否已經發生預定數目之處理循環。若為否，則方法返回到步驟2020以再次檢查循環次數。In one feature, rather than waiting for a predetermined time, it is determined at step 2020 whether a predetermined number of processing cycles have occurred. If not, the method returns to step 2020 to check the number of cycles again.

如果已經經過了預定時間或已經發生預定數目之處理循環，則在步驟2030，攝影機對焦以辨識環之內邊緣。如上所述，攝影機可對焦在邊緣耦合環之內邊緣上、或對焦在ESC或晶圓上之環之反射上。在步驟2040，在對焦之後，拍攝邊緣耦合環相對於固定參考物之影像，並且測量環之內邊緣之高度。在步驟2050，如果判定內邊緣在晶圓表面上方具有至少一預定高度，則在步驟2055判定等待預定時間。在一特徵中，不是等待預定時間，而是判定等待預定數目之晶圓處理循環。在預定時間已經經過、或已經發生預定數目之循環之後，方法返回到步驟2030，其中攝影機重新對焦，接著到步驟2040，其中拍攝更多影像，並且重複步驟2050之判定。If a predetermined time has elapsed or a predetermined number of processing cycles have occurred, then in step 2030, the camera focuses to identify the inner edge of the ring. As mentioned above, the camera can focus on the inner edge of the edge coupling ring, or on the reflection of the ring on the ESC or wafer. In step 2040, after focusing, take an image of the edge coupling ring relative to the fixed reference, and measure the height of the inner edge of the ring. In step 2050, if it is determined that the inner edge has at least a predetermined height above the wafer surface, it is determined in step 2055 to wait for a predetermined time. In one feature, rather than waiting for a predetermined time, it is determined to wait for a predetermined number of wafer processing cycles. After the predetermined time has elapsed or a predetermined number of cycles have occurred, the method returns to step 2030, where the camera refocuses, and then to step 2040, where more images are taken, and the determination of step 2050 is repeated.

如果判定邊緣耦合環之內邊緣在晶圓表面上方不具有至少一預定高度，則在步驟2060，控制器560控制垂直致動器以抬升邊緣耦合環。在步驟2070，判定自安裝邊緣耦合環以來是否存在預定數目之循環。若為否，則方法返回到步驟2055並等待預定時間。在一特徵中，在步驟2055，該方法可等待預定數目之循環。If it is determined that the inner edge of the edge coupling ring does not have at least a predetermined height above the wafer surface, then in step 2060, the controller 560 controls the vertical actuator to lift the edge coupling ring. At step 2070, it is determined whether a predetermined number of cycles have existed since the edge coupling ring was installed. If not, the method returns to step 2055 and waits for a predetermined time. In a feature, at step 2055, the method may wait for a predetermined number of cycles.

如果在步驟2070判定已經經過預定數目之循環，則在步驟2080更換邊緣耦合環。在一特徵中，不是觀察是否已經經過了預定數目之循環，而是可以量測致動器之延伸量。如果致動器之延伸超過預定量，則可判定應該更換邊緣耦合環。在另一特徵中，可判定自安裝邊緣耦合環以來是否已經經過了預定時間期間，代替先前之任何一替代方案。如果已經經過了這樣的時間期間，則可判定應該更換邊緣耦合環。If it is determined in step 2070 that a predetermined number of cycles have elapsed, then the edge coupling ring is replaced in step 2080. In one feature, instead of observing whether a predetermined number of cycles have elapsed, the amount of extension of the actuator can be measured. If the extension of the actuator exceeds a predetermined amount, it can be determined that the edge coupling ring should be replaced. In another feature, it may be determined whether a predetermined time period has elapsed since the edge coupling ring was installed, replacing any of the previous alternatives. If such a time period has elapsed, it can be determined that the edge coupling ring should be replaced.

在更換邊緣耦合環之後，該方法可以在步驟2090結束，或者可以返回到開始。After the edge coupling ring is replaced, the method may end at step 2090 or may return to the beginning.

以上所述在本質上僅用於說明，並非用於限制本揭示內容、其應用、或使用。本揭示內容之廣泛教示可以各種形式加以實施。因此，雖然本揭示內容包含特定之範例，但本揭示內容之實際範圍不應如此受限，因為在研讀圖示、說明書及以下的申請專利範圍後，其它的變化將變得顯而易見。如本文中所使用，詞組「A、B及C其中至少一者」應解讀為表示使用非排除性邏輯OR之邏輯（A OR B OR C），且不應解讀為表示「A其中至少一者、B其中至少一者、及C其中至少一者」。應當了解，在方法中之一或更多步驟可以不同的順序（或同時）執行而不改變本揭示內容之原理。The above descriptions are merely used for explanation in essence, and are not intended to limit the present disclosure, its application, or use. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, although this disclosure contains specific examples, the actual scope of this disclosure should not be so limited, as other changes will become apparent after studying the illustrations, the description, and the scope of patent applications below. As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning logic using a non-exclusive logical OR (A OR B OR C), and should not be interpreted as meaning "at least one of A , At least one of B, and at least one of C. " It should be understood that one or more steps in the method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure.

在某些實行例中，控制器為系統之一部分，其可為上述範例之一部分。此類系統可包括半導體處理設備，半導體處理設備包括一處理工具或複數處理工具、一腔室或複數腔室、一處理平臺或複數處理平臺、及∕或複數的特定處理組件（晶圓基座、氣體流動系統等）。這些系統可與複數電子裝置整合，該等電子裝置係用以在半導體晶圓或基板處理之前、期間及之後控制這些系統之操作。該等電子裝置可被稱為「控制器」，其可控制該系統或該等系統之各種組件或子部分。取決於處理需求及∕或系統類型，控制器可被程式化，以控制本文中所揭示之任何處理，包括處理氣體之輸送、溫度設定（例如，加熱及∕或冷卻）、壓力設定、真空設定、功率設定、射頻（RF）產生器設定、RF匹配電路設定、頻率設定、流率設定、流體輸送設定、定位及操作設定、晶圓傳輸進入或離開一工具或其它傳輸工具及∕或連接至特定系統或與特定系統交界之裝載室。In some implementations, the controller is part of the system, which may be part of the above example. Such systems may include semiconductor processing equipment including a processing tool or a plurality of processing tools, a chamber or a plurality of chambers, a processing platform or a plurality of processing platforms, and / or a plurality of specific processing components (a wafer base , Gas flow systems, etc.). These systems can be integrated with multiple electronic devices that are used to control the operation of these systems before, during, and after semiconductor wafer or substrate processing. These electronic devices may be referred to as "controllers", which may control the system or various components or sub-parts of those systems. Depending on the processing needs and / or system type, the controller can be programmed to control any of the processes disclosed in this document, including process gas delivery, temperature settings (eg, heating and cooling or cooling), pressure settings, vacuum settings , Power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positioning and operation settings, wafer transfer into or out of a tool or other transfer tool, and / or connection to Loading room for a specific system or its interface.

概括地說，控制器可被定義為具有各種積體電路、邏輯、記憶體及∕或軟體之電子裝置，其接收指令、發佈指令、控制操作、啟動清理操作、啟動終點量測等。積體電路可包括儲存程式指令之具有韌體形式之晶片、數位訊號處理器（DSP）、被定義為特殊應用積體電路（ASIC）之晶片、及∕或執行程式指令（例如，軟體）之一或更多微處理器或微控制器。程式指令可為與控制器通訊之具有各種獨立設定（或程式檔案）形式之指令，其定義了在半導體晶圓上或針對半導體晶圓、或對一系統進行特定處理所用之操作參數。在某些實施例中，操作參數可為製程工程師所定義之配方之一部分，以在晶圓之一或更多膜層、材料、金屬、氧化物、矽、二氧化矽、表面、電路及∕或晶粒之製造期間完成一或更多處理步驟。In summary, a controller can be defined as an electronic device with various integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, initiates cleaning operations, initiates endpoint measurements, and the like. Integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip that is defined as a special application integrated circuit (ASIC), and a program that executes or executes program instructions (eg, software). One or more microprocessors or microcontrollers. The program instructions may be instructions in the form of various independent settings (or program files) that communicate with the controller, and define the operating parameters used on the semiconductor wafer or for the semiconductor wafer, or to perform a specific process on a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to apply one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits and Or one or more processing steps are completed during the fabrication of the die.

在某些實行例中，控制器可為電腦之一部分或耦接至電腦，該電腦與該系統整合、耦接至該系統、以其它方式網路連接至該系統、或其組合。例如，控制器可在「雲端」中或為晶圓廠主機電腦系統之全部或一部分，其使得晶圓處理之遠端控制得以進行。該電腦可使得對系統之遠端控制得以進行，以監視製造操作之當前處理、檢驗過去製造操作之歷史記錄、檢驗複數製造操作之趨勢或效能評量、改變當前處理之參數、設置在當前處理之後之處理步驟、或開始新的處理。在某些範例中，遠端電腦（例如，伺服器）可透過網路而將處理配方提供至系統，網路可包含區域網路或網際網路。遠端電腦可包括使用者界面，使用者介面使得參數及∕或設定之輸入或程式化得以進行，該參數及∕或設定接著從遠端電腦被傳遞至該系統。在某些範例中，控制器接收數據形式之指令，指令為待於一或更多操作期間內實施之處理步驟其中每一者指定了參數。應當了解，參數可針對待實施之處理類型、及控制器與其接合或對其進行控制之工具類型。因此，如上所述，控制器可為分散式的，例如藉由包括以網路連接在一起並朝著共同目標（例如本文中所述之處理及控制）工作之一或更多獨立控制器。用於此類目標之分散式控制器之範例將是腔室中之一或更多積體電路，該一或更多積體電路與位於遠端（例如，在平台等級或做為遠端電腦之一部分）之一或更多積體電路通訊相結合，以控制腔室中之處理。In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, networked to the system in other ways, or a combination thereof. For example, the controller can be in the "cloud" or be all or part of a fab host computer system, which enables remote control of wafer processing. The computer can enable remote control of the system to monitor the current processing of manufacturing operations, check the history of past manufacturing operations, check the trend or performance of multiple manufacturing operations, change the parameters of current processing, and set the current processing Subsequent processing steps, or start new processing. In some examples, a remote computer (for example, a server) can provide processing recipes to the system over a network, which can include a local area network or the Internet. The remote computer may include a user interface that enables the input or programming of parameters and / or settings, which are then passed from the remote computer to the system. In some examples, the controller receives instructions in the form of data, the instructions specifying parameters for each of the processing steps to be performed during one or more operation periods. It should be understood that the parameters may be specific to the type of processing to be implemented and the type of tool with which the controller engages or controls it. Thus, as described above, the controllers can be decentralized, for example by including one or more independent controllers connected together over a network and working towards a common goal, such as the processing and control described herein. An example of a decentralized controller for such a target would be one or more integrated circuits in a chamber that are remotely located (eg, at the platform level or as a remote computer) (One part) or one or more integrated circuit communications to control processing in the chamber.

不受限地，示例性系統可包括電漿蝕刻腔室或模組、沉積腔室或模組、旋轉沖洗腔室或模組、金屬鍍腔室或模組、清潔腔室或模組、斜角邊緣蝕刻腔室或模組、物理氣相沉積（PVD）腔室或模組、化學氣相沉積（CVD）腔室或模組、原子層沉積（ALD）腔室或模組、原子層蝕刻（ALE）腔室或模組、離子植入腔室或模組、軌道腔室或模組、以及與半導體晶圓之製造相關或用於製造半導體晶圓之任何其它半導體處理系統。Without limitation, exemplary systems may include a plasma etching chamber or module, a deposition chamber or module, a spin flushing chamber or module, a metal plating chamber or module, a cleaning chamber or module, a diagonal Corner edge etching chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, and any other semiconductor processing system related to or used in the manufacture of semiconductor wafers.

如上所述，取決於待由工具所實施之處理步驟，控制器可與下列之一或更多者通訊：其它工具電路或模組、其它工具組件、叢集工具、其它工具界面、相鄰工具、鄰近工具、位於工廠各處之工具、主電腦、另一控制器、或在半導體製造工廠中將晶圓容器移入及移出工具位置及∕或裝載埠之材料傳送用工具。As mentioned above, depending on the processing steps to be implemented by the tool, the controller can communicate with one or more of the following: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, Proximity tools, tools located throughout the factory, host computer, another controller, or material transfer tools for moving wafer containers into and out of tool locations and / or loading ports in semiconductor manufacturing plants.

20‧‧‧基座20‧‧‧ base

30‧‧‧邊緣耦合環30‧‧‧Edge coupling ring

32‧‧‧第一環形部32‧‧‧first ring

33‧‧‧基板33‧‧‧ substrate

34‧‧‧第二環形部34‧‧‧Second Ring Section

36‧‧‧第三環形部36‧‧‧ Third Ring

42‧‧‧電漿42‧‧‧ Plasma

44‧‧‧電漿44‧‧‧ Plasma

48‧‧‧邊緣48‧‧‧ edge

60‧‧‧邊緣耦合環60‧‧‧Edge coupling ring

72‧‧‧第一環形部72‧‧‧first ring

74‧‧‧第二環形部74‧‧‧Second Ring Section

76‧‧‧第三環形部76‧‧‧ Third Ring

80‧‧‧致動器80‧‧‧Actuator

82‧‧‧電漿82‧‧‧ Plasma

84‧‧‧電漿84‧‧‧ Plasma

86‧‧‧邊緣86‧‧‧Edge

110‧‧‧致動器110‧‧‧Actuator

114‧‧‧結構114‧‧‧ Structure

116‧‧‧結構116‧‧‧ Structure

150‧‧‧邊緣耦合環150‧‧‧Edge Coupling Ring

154‧‧‧壓電致動器154‧‧‧piezo actuator

156‧‧‧邊緣156‧‧‧Edge

500‧‧‧基板處理腔室500‧‧‧ substrate processing chamber

502‧‧‧處理腔室502‧‧‧Processing chamber

503‧‧‧邊緣耦合環503‧‧‧Edge coupling ring

504‧‧‧上電極504‧‧‧up electrode

505‧‧‧致動器505‧‧‧Actuator

506‧‧‧基座506‧‧‧ base

507‧‧‧下電極507‧‧‧lower electrode

508‧‧‧基板508‧‧‧ substrate

509‧‧‧噴淋頭509‧‧‧ sprinkler

510‧‧‧RF產生系統510‧‧‧RF generation system

512‧‧‧匹配及分佈網路512‧‧‧ matching and distribution network

530‧‧‧氣體傳送系統530‧‧‧Gas Delivery System

532-1, 532-2, 532-N‧‧‧氣體源532-1, 532-2, 532-N‧‧‧Gas source

534-1, 534-N‧‧‧閥534-1, 534-N‧‧‧ Valve

536-1, 536-N‧‧‧質量流量控制器536-1, 536-N‧‧‧mass flow controller

540‧‧‧歧管540‧‧‧ Manifold

542‧‧‧加熱器542‧‧‧heater

550‧‧‧閥550‧‧‧valve

552‧‧‧泵552‧‧‧ pump

560‧‧‧控制器560‧‧‧controller

570‧‧‧機器臂570‧‧‧ robot arm

572‧‧‧感測器572‧‧‧Sensor

573‧‧‧機器臂573‧‧‧ robot arm

600‧‧‧方法600‧‧‧ Method

610‧‧‧步驟610‧‧‧step

614‧‧‧步驟614‧‧‧step

618‧‧‧步驟618‧‧‧step

622‧‧‧步驟622‧‧‧step

624‧‧‧步驟624‧‧‧step

628‧‧‧步驟628‧‧‧step

700‧‧‧方法700‧‧‧ Method

710‧‧‧步驟710‧‧‧step

714‧‧‧步驟714‧‧‧step

718‧‧‧步驟718‧‧‧step

722‧‧‧步驟722‧‧‧step

724‧‧‧步驟724‧‧‧step

728‧‧‧步驟728‧‧‧step

800‧‧‧處理腔室800‧‧‧ treatment chamber

804‧‧‧致動器804‧‧‧Actuator

810‧‧‧機械連桿810‧‧‧ mechanical linkage

811‧‧‧孔811‧‧‧hole

812‧‧‧密封件812‧‧‧seal

814‧‧‧壁814‧‧‧wall

815‧‧‧孔815‧‧‧hole

830‧‧‧邊緣耦合環830‧‧‧Edge coupling ring

830-1, 830-2‧‧‧部分830-1, 830-2‧‧‧ parts

832-1, 832-2‧‧‧部分832-1, 832-2‧‧‧ parts

836-1, 836-2‧‧‧致動器836-1, 836-2‧‧‧Actuators

840‧‧‧第一設置840‧‧‧First setting

850‧‧‧第二設置850‧‧‧Second Setting

900‧‧‧方法900‧‧‧ Method

910‧‧‧步驟910‧‧‧step

914‧‧‧步驟914‧‧‧step

918‧‧‧步驟918‧‧‧step

922‧‧‧步驟922‧‧‧step

924‧‧‧步驟924‧‧‧step

930‧‧‧步驟930‧‧‧step

934‧‧‧步驟934‧‧‧step

1010‧‧‧基座1010‧‧‧Base

1012‧‧‧襯套1012‧‧‧ Bush

1014‧‧‧邊緣耦合環1014‧‧‧Edge Coupling Ring

1015‧‧‧開口1015‧‧‧ opening

1018‧‧‧抬升環1018‧‧‧Lifting ring

1019‧‧‧開放部1019‧‧‧ Open Department

1020‧‧‧末端1020‧‧‧End

1021‧‧‧靜電夾盤（ESC）1021‧‧‧ESC

1022‧‧‧ESC板1022‧‧‧ESC board

1024‧‧‧ESC板1024‧‧‧ESC board

1026‧‧‧O型環1026‧‧‧O-ring

1030‧‧‧ESC板1030‧‧‧ESC board

1032‧‧‧ESC板1032‧‧‧ESC board

1034‧‧‧底部邊緣耦合環1034‧‧‧ bottom edge coupling ring

1040‧‧‧自我置中特徵部1040‧‧‧Self-centering feature

1044‧‧‧自我置中特徵部1044‧‧‧Self-centered feature

1046‧‧‧自我置中特徵部1046‧‧‧Self-centered feature

1048‧‧‧自我置中特徵部1048‧‧‧Self-centered feature

1050‧‧‧自我置中特徵部1050‧‧‧Self-centering feature

1051‧‧‧自我置中特徵部1051‧‧‧Feature Center

1052‧‧‧自我置中特徵部1052‧‧‧Self-centered feature

1054‧‧‧凸出部1054‧‧‧ protrusion

1056‧‧‧溝槽1056‧‧‧Trench

1057‧‧‧表面1057‧‧‧ surface

1060‧‧‧支柱1060‧‧‧ Pillar

1064‧‧‧致動器1064‧‧‧Actuator

1102‧‧‧機器手臂1102‧‧‧ robotic arm

1104‧‧‧支持器1104‧‧‧Supporter

1110‧‧‧自我置中特徵部1110‧‧‧Self-centered feature

1210‧‧‧支柱1210‧‧‧ Pillar

1214‧‧‧致動器1214‧‧‧Actuator

1220‧‧‧孔1220‧‧‧hole

1224‧‧‧孔1224‧‧‧hole

1228‧‧‧孔1228‧‧‧hole

1238‧‧‧邊緣耦合環1238‧‧‧Edge Coupling Ring

1240‧‧‧中間邊緣耦合環1240‧‧‧Intermediate edge coupling ring

1244‧‧‧自我置中特徵部1244‧‧‧Self-centered feature

1246‧‧‧自我置中特徵部1246‧‧‧Self-centering feature

1248‧‧‧自我置中特徵部1248‧‧‧Self-centered feature

1310‧‧‧邊緣耦合環1310‧‧‧Edge Coupling Ring

1316‧‧‧自我置中特徵部1316‧‧‧Self-centered feature

1320‧‧‧自我置中特徵部1320‧‧‧Self-centered feature

1324‧‧‧溝槽1324‧‧‧Groove

1326‧‧‧自我置中特徵部1326‧‧‧Self-centered feature

1400‧‧‧方法1400‧‧‧Method

1404‧‧‧步驟1404‧‧‧step

1408‧‧‧步驟1408‧‧‧step

1410‧‧‧步驟1410‧‧‧step

1412‧‧‧步驟1412‧‧‧step

1416‧‧‧步驟1416‧‧‧step

1500‧‧‧方法1500‧‧‧Method

1502‧‧‧步驟1502‧‧‧step

1504‧‧‧步驟1504‧‧‧step

1506‧‧‧步驟1506‧‧‧step

1508‧‧‧步驟1508‧‧‧step

1510‧‧‧步驟1510‧‧‧step

1512‧‧‧步驟1512‧‧‧step

1520‧‧‧步驟1520‧‧‧step

1524‧‧‧步驟1524‧‧‧step

1528‧‧‧步驟1528‧‧‧step

1600‧‧‧方法1600‧‧‧Method

1610‧‧‧步驟1610‧‧‧step

1620‧‧‧步驟1620‧‧‧step

1624‧‧‧步驟1624‧‧‧step

1628‧‧‧步驟1628‧‧‧step

1632‧‧‧步驟1632‧‧‧step

1636‧‧‧步驟1636‧‧‧step

1638‧‧‧步驟1638‧‧‧step

1642‧‧‧步驟1642‧‧‧step

1646‧‧‧步驟1646‧‧‧step

1710‧‧‧處理腔室1710‧‧‧Processing chamber

1715‧‧‧窗口1715‧‧‧ window

1720‧‧‧基座1720‧‧‧Base

1725‧‧‧靜電夾盤（ESC）1725‧‧‧ESC

1730‧‧‧致動器機構1730‧‧‧Actuator mechanism

1735‧‧‧致動器機構1735‧‧‧Actuator mechanism

1740‧‧‧邊緣耦合環1740‧‧‧Edge Coupling Ring

1740’‧‧‧邊緣耦合環1740’‧‧‧Edge Coupling Ring

1750‧‧‧晶圓1750‧‧‧wafer

1760‧‧‧攝影機1760‧‧‧Camera

1765‧‧‧附接機構1765‧‧‧ Attachment

1770‧‧‧側視窗1770‧‧‧side window

1775‧‧‧擋板1775‧‧‧ Bezel

1780‧‧‧外部照明設備1780‧‧‧External lighting

1785‧‧‧附接機構1785‧‧‧ Attachment

1790‧‧‧側視窗1790‧‧‧side window

1795‧‧‧擋板1795‧‧‧ Bezel

1800‧‧‧控制器1800‧‧‧ Controller

1840‧‧‧邊緣耦合環1840‧‧‧Edge Coupling Ring

1840’‧‧‧反射1840’‧‧‧Reflection

1845‧‧‧受侵蝕的部分1845‧‧‧Eroded

1845’‧‧‧反射1845’‧‧‧Reflection

1910‧‧‧步驟1910‧‧‧step

1920‧‧‧步驟1920‧‧‧ steps

1930‧‧‧步驟1930‧‧‧ steps

1940‧‧‧步驟1940‧‧‧ steps

1950‧‧‧步驟1950‧‧‧ steps

1955‧‧‧步驟1955‧‧‧step

1960‧‧‧步驟1960‧‧‧step

1965‧‧‧步驟1965‧‧‧ steps

1970‧‧‧步驟1970‧‧‧step

1975‧‧‧步驟1975‧‧‧step

1980‧‧‧步驟1980‧‧‧ steps

2010‧‧‧步驟2010‧‧‧Steps

2020‧‧‧步驟2020‧‧‧step

2030‧‧‧步驟2030‧‧‧step

2040‧‧‧步驟2040‧‧‧step

2050‧‧‧步驟2050‧‧‧step

2055‧‧‧步驟2055‧‧‧step

2060‧‧‧步驟2060‧‧‧step

2070‧‧‧步驟2070‧‧‧step

2080‧‧‧步驟2080‧‧‧step

2090‧‧‧步驟2090‧‧‧step

根據實施方式及隨附圖式，將能更完整地理解本揭示內容，其中：According to the embodiments and accompanying drawings, the present disclosure can be more fully understood, in which:

圖1為根據先前技術之基座及邊緣耦合環之側視橫剖面圖；1 is a side cross-sectional view of a base and an edge coupling ring according to the prior art;

圖2為在邊緣耦合環之侵蝕發生之後，根據先前技術之基座及邊緣耦合環之側視橫剖面圖；2 is a side cross-sectional view of a base and an edge coupling ring according to the prior art after erosion of the edge coupling ring;

圖3為基座、邊緣耦合環、及致動器之範例之側視橫剖面圖；3 is a side cross-sectional view of an example of a base, an edge coupling ring, and an actuator;

圖4為在邊緣耦合環之侵蝕發生之後，圖3之基座、邊緣耦合環、及致動器之側視橫剖面圖；4 is a side cross-sectional view of the base, the edge coupling ring, and the actuator of FIG. 3 after the erosion of the edge coupling ring occurs;

圖5為在邊緣耦合環之侵蝕發生且移動致動器之後，圖3之基座、邊緣耦合環、及致動器之側視橫剖面圖；5 is a side cross-sectional view of the base, the edge coupling ring, and the actuator of FIG. 3 after erosion of the edge coupling ring occurs and the actuator is moved;

圖6為根據本揭示內容之基座、邊緣耦合環、及位於另一位置中之致動器之另一範例之側視橫剖面圖；6 is a side cross-sectional view of another example of a base, an edge coupling ring, and an actuator in another position according to the present disclosure;

圖7為根據本揭示內容之基座、邊緣耦合環、及壓電致動器之另一範例之側視橫剖面圖；7 is a side cross-sectional view of another example of a base, an edge coupling ring, and a piezoelectric actuator according to the present disclosure;

圖8為侵蝕發生且移動壓電致動器之後，圖7之基座、邊緣耦合環、及壓電致動器之側視橫剖面圖；8 is a side cross-sectional view of the base, the edge coupling ring, and the piezoelectric actuator of FIG. 7 after erosion occurs and the piezoelectric actuator is moved;

圖9為根據本揭示內容之包含基座、邊緣耦合環、及致動器之基板處理腔室之範例之功能方塊圖；9 is a functional block diagram of an example of a substrate processing chamber including a base, an edge coupling ring, and an actuator according to the present disclosure;

圖10為根據本揭示內容之流程圖，說明操作致動器以移動邊緣耦合環之方法之範例之步驟；10 is a flowchart illustrating an example of a method of operating an actuator to move an edge coupling ring according to a flowchart of the present disclosure;

圖11為根據本揭示內容之流程圖，說明操作致動器以移動邊緣耦合環之方法之另一範例之步驟；11 is a flowchart illustrating another example of a method of operating an actuator to move an edge coupling ring according to a flowchart of the present disclosure;

圖12為根據本揭示內容之處理腔室之範例之功能方塊圖，處理腔室包含可藉由配置於處理腔室外側之致動器而移動之邊緣耦合環；12 is a functional block diagram of an example of a processing chamber according to the present disclosure. The processing chamber includes an edge coupling ring that can be moved by an actuator disposed outside the processing chamber;

圖13A及13B說明根據本揭示內容之邊緣耦合環之側邊至側邊傾斜之範例；13A and 13B illustrate examples of side-to-side tilt of an edge coupling ring according to the present disclosure;

圖14說明在基板處理期間，移動邊緣耦合環之方法之範例；Figure 14 illustrates an example of a method of moving an edge coupling ring during substrate processing;

圖15為包含邊緣耦合環及抬升環之基座之範例之俯視圖；15 is a top view of an example of a base including an edge coupling ring and a lifting ring;

圖16為邊緣耦合環及抬升環之範例之側視橫剖面圖；16 is a side cross-sectional view of an example of an edge coupling ring and a lifting ring;

圖17為被抬升環抬起之邊緣耦合環之範例之側視橫剖面圖，且該邊緣耦合環係藉由機器手臂而移除；17 is a side cross-sectional view of an example of an edge coupling ring lifted by a lifting ring, and the edge coupling ring is removed by a robot arm;

圖18為可移動式邊緣耦合環及抬升環之範例之側視橫剖面圖；18 is a side cross-sectional view of an example of a movable edge coupling ring and a lifting ring;

圖19為處於上升位置之圖18之可移動式邊緣耦合環之側視橫剖面圖；19 is a side cross-sectional view of the movable edge coupling ring of FIG. 18 in a raised position;

圖20為被抬升環抬起之圖18之邊緣耦合環之側視橫剖面圖，且該邊緣耦合環係藉由機器手臂而移除；20 is a side cross-sectional view of the edge coupling ring of FIG. 18 lifted by the lifting ring, and the edge coupling ring is removed by a robot arm;

圖21為可移動式邊緣耦合環之範例之側視橫剖面圖；21 is a side cross-sectional view of an example of a movable edge coupling ring;

圖22為被致動器抬起之圖21之邊緣耦合環之側視橫剖面圖，且該邊緣耦合環係藉由機器手臂而移除；22 is a side cross-sectional view of the edge coupling ring of FIG. 21 lifted by an actuator, and the edge coupling ring is removed by a robot arm;

圖23為在不打開處理腔室之情形下更換邊緣耦合環之方法之範例；FIG. 23 is an example of a method of replacing an edge coupling ring without opening a processing chamber; FIG.

圖24為在不打開處理腔室之情形下由於侵蝕而移動邊緣耦合環、及更換邊緣耦合環之方法之範例；FIG. 24 is an example of a method for moving the edge coupling ring and replacing the edge coupling ring due to erosion without opening the processing chamber;

圖25為在不打開處理腔室之情形下由於侵蝕而抬升邊緣耦合環、及更換邊緣耦合環之方法之範例；FIG. 25 is an example of a method of lifting the edge coupling ring due to erosion without opening the processing chamber, and replacing the edge coupling ring;

圖26為處理腔室之側視橫剖面圖，具有安裝於腔室外側之偵測器之範例；26 is a side cross-sectional view of the processing chamber, with an example of a detector installed outside the chamber;

圖27為處理腔室之側視橫剖面圖，具有安裝於腔室外側之偵測器及照明裝置之範例；27 is a side cross-sectional view of a processing chamber, with an example of a detector and a lighting device installed outside the chamber;

圖28為處理腔室之側視橫剖面圖，具有受到蝕刻或侵蝕之邊緣耦合環；28 is a side cross-sectional view of a processing chamber with an edge coupling ring subjected to etching or erosion;

圖29A顯示襯套之放大側視圖，圖29B及29C顯示相對於襯套之良好及不良邊緣耦合環置放之範例；FIG. 29A shows an enlarged side view of the bushing, and FIGS. 29B and 29C show examples of good and poor edge coupling ring placement relative to the bushing;

圖30A-30C顯示邊緣耦合環之不同位置及狀態之影像之範例；30A-30C are examples of images showing different positions and states of the edge coupling ring;

圖31為顯示使用偵測器之邊緣耦合環之另一成像模式之側視橫剖面圖；31 is a side cross-sectional view showing another imaging mode using an edge coupling ring of a detector;

圖32為檢視邊緣耦合環以判定其在靜電夾盤上之對準之方法之範例；FIG. 32 is an example of a method of examining an edge coupling ring to determine its alignment on an electrostatic chuck; FIG.

圖33為檢視邊緣耦合環以判定其狀況之方法之範例。FIG. 33 is an example of a method for examining an edge coupling ring to determine its condition.

在圖式中，元件符號可能重複使用，以標示類似及∕或相同的元件。In the drawings, component symbols may be reused to indicate similar and / or identical components.

Claims (26)

一種基板處理系統，包括： 一處理腔室，具有一第一側視窗； 一基座，配置在該處理腔室中； 一襯套，圍繞該基座，該襯套具有至少一開口； 一邊緣耦合環，配置在該基座附近，該邊緣耦合環包括一第一部分，當一基板放置在該基座上時，該第一部分位於該基板之徑向外邊緣之外側並且圍繞著該基板之該徑向外邊緣； 一致動器，用以相對於 (i) 基板及 (ii) 該邊緣耦合環之一第二部分而選擇性地移動該邊緣耦合環之該第一部分，以改變該邊緣耦合環之一邊緣耦合輪廓，該第二部分位於該第一部分之徑向內側，其中該致動器係用以移動該第一部分至該第一部分之上表面在該基板之一上表面上方之至少一位置；及 一偵測系統，用以偵測該邊緣耦合環之狀況，該偵測系統包括： 一攝影機，用以透過該第一側視窗而獲得該邊緣耦合環之一面向電漿表面之影像資料；及 一第一控制器，用以接收該影像資料、並且判定該邊緣耦合環之該面向電漿表面之狀況及位置其中至少一者。A substrate processing system includes: a processing chamber having a first side window; a base disposed in the processing chamber; a bushing surrounding the base, the bushing having at least one opening; an edge A coupling ring is disposed near the base. The edge coupling ring includes a first portion. When a substrate is placed on the base, the first portion is located outside the radial outer edge of the substrate and surrounds the substrate. A radial outer edge; an actuator for selectively moving the first portion of the edge coupling ring relative to (i) the base plate and (ii) a second portion of the edge coupling ring to change the edge coupling ring An edge coupling profile, the second portion is located radially inward of the first portion, wherein the actuator is used to move the first portion to at least one position above the first surface above an upper surface of the substrate And a detection system for detecting the condition of the edge coupling ring, the detection system includes: a camera for obtaining one of the edge coupling rings facing the plasma surface through the first side window; Image data; and a first controller for receiving the image data, and determines the condition of the edge surface of the coupling ring facing the plasma and wherein the at least one position. 如申請專利範圍第1項之基板處理系統，其中該偵測系統更包括一照明設備，用以將光提供給該攝影機以獲得該邊緣耦合環之該影像資料。For example, the substrate processing system of item 1 of the patent application scope, wherein the detection system further includes a lighting device for supplying light to the camera to obtain the image data of the edge coupling ring. 如申請專利範圍第2項之基板處理系統，其中該照明設備透過該第一側視窗而提供光。For example, the substrate processing system of claim 2 in which the lighting device provides light through the first side window. 如申請專利範圍第2項之基板處理系統，其中該處理腔室包括一第二側視窗，其中該照明設備透過該第二側視窗而提供光。For example, the substrate processing system of the second patent application scope, wherein the processing chamber includes a second side window, and the lighting device provides light through the second side window. 如申請專利範圍第1項之基板處理系統，更包括： 一氣體傳送系統，用以傳送處理氣體及載氣至該處理腔室；及 一電漿產生器，用以在該處理腔室中產生電漿以蝕刻該基板。For example, the substrate processing system of the scope of application for patent further includes: a gas transfer system for transferring a processing gas and a carrier gas to the processing chamber; and a plasma generator for generating in the processing chamber Plasma to etch the substrate. 如申請專利範圍第5項之基板處理系統，其中該電漿產生器將光提供給該攝影機以獲得該邊緣耦合環之該影像資料。For example, the substrate processing system of claim 5 in which the plasma generator provides light to the camera to obtain the image data of the edge coupling ring. 如申請專利範圍第1項之基板處理系統，其中該致動器回應一狀況以使該邊緣耦合環相對於該基板而在垂直方向上移動，該狀況指出該邊緣耦合環之該面向電漿表面之侵蝕。For example, the substrate processing system of the scope of patent application, wherein the actuator responds to a condition to cause the edge coupling ring to move in a vertical direction relative to the substrate, and the condition indicates that the plasma coupling surface of the edge coupling ring faces Erosion. 如申請專利範圍第1項之基板處理系統，其中該致動器回應一狀況以使該邊緣耦合環相對於該基板而在水平方向上移動，該狀況指出該邊緣耦合環之未對準（misalignment）。For example, the substrate processing system of claim 1 in which the actuator responds to a condition to cause the edge coupling ring to move horizontally relative to the substrate, and the condition indicates misalignment of the edge coupling ring. ). 如申請專利範圍第1項之基板處理系統，其中該致動器回應一狀況以使該邊緣耦合環之該第一部分相對於該基板而在垂直方向上移動，該狀況指出該邊緣耦合環之未對準。For example, the substrate processing system of claim 1 in which the actuator responds to a condition to move the first portion of the edge coupling ring in a vertical direction relative to the substrate, and the condition indicates that the edge coupling ring is not alignment. 如申請專利範圍第1項之基板處理系統，更包括一第二控制器，用以回應該第一控制器，以控制該致動器而選擇性地移動該邊緣耦合環之該第一部分。For example, the substrate processing system in the first patent application scope further includes a second controller for responding to the first controller to control the actuator to selectively move the first part of the edge coupling ring. 如申請專利範圍第10項之基板處理系統，其中該第二控制器用以回應該邊緣耦合環之足夠侵蝕之判定，以實施該邊緣耦合環之更換。For example, the substrate processing system of claim 10, wherein the second controller is used to respond to the determination of sufficient erosion of the edge coupling ring to implement the replacement of the edge coupling ring. 如申請專利範圍第1項之基板處理系統，其中該攝影機係瞄準於該邊緣耦合環上以獲得該影像資料。For example, the substrate processing system of the first patent application scope, wherein the camera is aimed at the edge coupling ring to obtain the image data. 如申請專利範圍第1項之基板處理系統，更包括一靜電夾盤（ESC），該ESC係配置在該基座上，其中該攝影機係瞄準於該基板及該ESC其中至少一者上以獲得該影像資料。For example, the substrate processing system of the first patent application scope further includes an electrostatic chuck (ESC), which is arranged on the base, wherein the camera is aimed at at least one of the substrate and the ESC to obtain The image data. 如申請專利範圍第1項之基板處理系統，其中該影像資料包括該邊緣耦合環之一區段相對於在該襯套中之該至少一開口之影像資料，及其中該第一控制器計算在該邊緣耦合環之該區段與該至少一開口之頂部之間之高度，以判定該邊緣耦合環之狀況及位置其中至少一者。For example, the substrate processing system of the scope of patent application, wherein the image data includes image data of a segment of the edge coupling ring with respect to the at least one opening in the bush, and the first controller calculates the The height between the section of the edge coupling ring and the top of the at least one opening to determine at least one of the condition and position of the edge coupling ring. 如申請專利範圍第14項之基板處理系統，其中該襯套具有複數開口，其中該影像資料包括該邊緣耦合環之該區段相對於在該襯套中之該複數開口之影像資料，及其中該第一控制器計算在該邊緣耦合環之該區段與該複數開口之複數對應頂部之間之複數高度，以判定該邊緣耦合環之該狀況及該位置其中至少一者。For example, the substrate processing system of claim 14 in which the bushing has a plurality of openings, wherein the image data includes image data of the section of the edge coupling ring relative to the plurality of openings in the bushing, and The first controller calculates a complex height between the section of the edge coupling ring and a complex corresponding top of the plurality of openings to determine at least one of the condition of the edge coupling ring and the position. 如申請專利範圍第1項之基板處理系統，其中該第一控制器回應該邊緣耦合環之狀況之偵測，以調整該攝影機之位置。For example, the substrate processing system of the first scope of the patent application, wherein the first controller responds to the detection of the condition of the edge coupling ring to adjust the position of the camera. 在一基板處理系統中，該基板處理系統包括：一處理腔室，具有一第一側視窗；一基座，配置在該處理腔室中；一襯套，圍繞該基座，該襯套具有複數開口；及一邊緣耦合環，配置在該基座附近，該邊緣耦合環包括一第一部分，該第一部分位於在該基座上之一基板之徑向外邊緣之外側並且圍繞著該基板之該徑向外邊緣， 一偵測系統，用以偵測該邊緣耦合環之狀況及位置其中一或多者，該偵測系統包括： 一攝影機，透過該第一側視窗而獲得該邊緣耦合環之影像資料；及 一控制器，接收該影像資料、並且判定該邊緣耦合環之一面向電漿表面之該狀況及該位置其中至少一者， 其中該影像資料包括該邊緣耦合環之一區段相對於在該襯套中之該複數開口之影像資料，其中該控制器計算在該邊緣耦合環之該區段與該複數開口之複數不同頂部之間之複數高度，及其中該控制器比較該複數高度，以判定該邊緣耦合環之該狀況及該位置其中一者。In a substrate processing system, the substrate processing system includes: a processing chamber having a first side window; a base disposed in the processing chamber; a bushing surrounding the base, the bushing having A plurality of openings; and an edge coupling ring disposed near the base, the edge coupling ring including a first portion located on an outer side of a radial outer edge of a substrate on the base and surrounding the substrate The radial outer edge is a detection system for detecting one or more of the condition and position of the edge coupling ring. The detection system includes: a camera that obtains the edge coupling ring through the first side window. Image data; and a controller that receives the image data and determines at least one of the condition and the position of one of the edge coupling rings facing the plasma surface, wherein the image data includes a section of the edge coupling ring With respect to the image data of the plurality of openings in the bushing, wherein the controller calculates a complex height between the section of the edge coupling ring and a plurality of different tops of the plurality of openings, And the controller compares the complex height to determine one of the condition of the edge coupling ring and the position. 如申請專利範圍第17項之偵測系統，其中該基板處理系統更包括一靜電夾盤（ESC），該ESC係配置在該基座上，及其中該攝影機係瞄準於該基板及該ESC其中一者上以獲得該影像資料。For example, the detection system of the 17th patent application scope, wherein the substrate processing system further includes an electrostatic chuck (ESC), the ESC is arranged on the base, and the camera is aimed at the substrate and the ESC. One to get the image data. 一種判定邊緣耦合環之狀況及位置其中至少一者之方法，該邊緣耦合環在一基板處理系統中，該方法包括： 辨識該邊緣耦合環之一內邊緣； 獲得該邊緣耦合環相對於一固定參考物之影像資料； 處理該影像資料，以判定該邊緣耦合環是否在垂直方向上對準； 回應於該邊緣耦合環並非在垂直方向上對準之判定，在垂直方向上調整該邊緣耦合環； 判定該邊緣耦合環之該內邊緣是否處於一預定高度； 回應於該邊緣耦合環之該內邊緣並非處於該預定高度之判定，判定該邊緣耦合環是否可在垂直方向上調整；及 回應於該邊緣耦合環可在垂直方向上調整之判定，在垂直方向上調整該邊緣耦合環。A method for determining at least one of a status and a position of an edge coupling ring, the edge coupling ring in a substrate processing system, the method comprising: identifying an inner edge of the edge coupling ring; obtaining the edge coupling ring relative to a fixed The image data of the reference object; processing the image data to determine whether the edge coupling ring is aligned in the vertical direction; in response to the determination that the edge coupling ring is not aligned in the vertical direction, adjust the edge coupling ring in the vertical direction ; Determining whether the inner edge of the edge coupling ring is at a predetermined height; in response to a determination that the inner edge of the edge coupling ring is not at the predetermined height, determining whether the edge coupling ring can be adjusted in a vertical direction; and responding to The edge coupling ring can be adjusted in the vertical direction, and the edge coupling ring can be adjusted in the vertical direction. 如申請專利範圍第19項之判定邊緣耦合環之狀況及位置其中至少一者之方法，更包括： 回應於該邊緣耦合環不可在垂直方向上調整之判定，指示該邊緣耦合環之更換。If the method of determining at least one of the status and position of the edge coupling ring in the scope of the patent application item 19 further includes: in response to the determination that the edge coupling ring cannot be adjusted in the vertical direction, instructing the edge coupling ring to be replaced. 如申請專利範圍第19項之判定邊緣耦合環之狀況及位置其中至少一者之方法，其中判定該邊緣耦合環是否可在垂直方向上調整包括：判定自安裝該邊緣耦合環在該基板處理系統中以來，是否已經存在預定數目之半導體處理循環。For example, in the method for determining at least one of the status and position of an edge coupling ring in the scope of patent application, wherein determining whether the edge coupling ring can be adjusted in a vertical direction includes: determining whether the edge coupling ring has been installed in the substrate processing system Since mid-term, whether a predetermined number of semiconductor processing cycles already exist. 如申請專利範圍第19項之判定邊緣耦合環之狀況及位置其中至少一者之方法，其中判定該邊緣耦合環是否可在垂直方向上調整包括：判定自安裝該邊緣耦合環在該半導體處理系統中以來，是否已經經過了預定時間量。For example, the method for determining at least one of the status and position of an edge coupling ring in item 19 of the scope of patent application, wherein determining whether the edge coupling ring can be adjusted in a vertical direction includes: determining whether the edge coupling ring is installed in the semiconductor processing system Whether a predetermined amount of time has passed since China. 如申請專利範圍第19項之判定邊緣耦合環之狀況及位置其中至少一者之方法，其中判定該邊緣耦合環是否可在垂直方向上調整包括：判定該邊緣耦合環是否已經在垂直方向上抬升至其最大程度。For example, in the method for determining at least one of the status and position of an edge coupling ring in item 19 of the scope of patent application, wherein determining whether the edge coupling ring can be adjusted in a vertical direction includes: determining whether the edge coupling ring has been lifted in a vertical direction. To its fullest extent. 如申請專利範圍第19項之判定邊緣耦合環之狀況及位置其中至少一者之方法，其中在垂直方向上調整該邊緣耦合環包括：相對於該邊緣耦合環之另一部分，在垂直方向上調整該邊緣耦合環之一部分。For example, in the method for determining at least one of the status and position of an edge coupling ring in item 19 of the scope of patent application, wherein adjusting the edge coupling ring in a vertical direction includes: adjusting in a vertical direction with respect to another part of the edge coupling ring. The edge coupling part of the ring. 如申請專利範圍第19項之判定邊緣耦合環之狀況及位置其中至少一者之方法，更包括： 判定該邊緣耦合環是否在水平方向上對準；及 回應於該邊緣耦合環並非在水平方向上對準之判定，在水平方向上調整該邊緣耦合環。If the method of determining at least one of the status and position of the edge coupling ring in the scope of the patent application item 19 further includes: determining whether the edge coupling ring is aligned in the horizontal direction; and responding that the edge coupling ring is not in the horizontal direction To determine the alignment, adjust the edge coupling ring in the horizontal direction. 如申請專利範圍第25項之判定邊緣耦合環之狀況及位置其中至少一者之方法，其中在水平方向上調整該邊緣耦合環包括：相對於在該基板處理系統中之一基座，移動該邊緣耦合環，該基板係配置在該基座上。For example, in the method for determining at least one of the status and position of an edge coupling ring in the scope of application for a patent, wherein adjusting the edge coupling ring in a horizontal direction includes: moving the relative to a base in the substrate processing system. An edge coupling ring is disposed on the base.
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