TW201903860A - Substrate processing device - Google Patents
Substrate processing device Download PDFInfo
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- TW201903860A TW201903860A TW107110402A TW107110402A TW201903860A TW 201903860 A TW201903860 A TW 201903860A TW 107110402 A TW107110402 A TW 107110402A TW 107110402 A TW107110402 A TW 107110402A TW 201903860 A TW201903860 A TW 201903860A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
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- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
本揭示,係關於基板處理裝置。This disclosure relates to a substrate processing apparatus.
在專利文獻1中,係揭示有如下述:在為了擴散塗佈液而使被塗佈了塗佈液(處理液)的基板旋轉之際,產生塗佈液固化成絲狀的絲狀物;恐有該絲狀物堵塞於排氣流路中之虞;及在排氣流路之上方設置捕捉該絲狀物的捕捉部。 [先前技術文獻] [專利文獻]Patent Document 1 discloses the following: when the substrate to which the coating liquid (treatment liquid) is applied is rotated in order to diffuse the coating liquid, the coating liquid is solidified into filaments; There is a fear that the filament may be blocked in the exhaust flow path; and a catching portion for catching the filament may be provided above the exhaust flow path. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本實用新案登錄第3175893號公報[Patent Document 1] Japanese Utility Model Registration No. 3175893
[本發明所欲解決之課題][Problems to be Solved by the Invention]
藉由上述專利文獻1所揭示的手段,可適當地控制絲狀物堵塞於排氣流路中。在此,有如下述之情形:因基板之旋轉而產生之絲狀物的一部分,係迴繞至基板之背面,而沈積於被配置在保持基板之保持部的下方之杯基座(回收處理液之回收部)等。由於在杯基座之周邊等、保持部之下方,係設置有較多配管,因此,回收所沈積之絲狀物的作業變得繁雜。By the means disclosed in the aforementioned Patent Document 1, clogging of the filaments in the exhaust flow path can be appropriately controlled. Here, there is a case where a part of the filaments generated by the rotation of the substrate is wound back to the rear surface of the substrate, and is deposited on a cup base (recycling processing liquid) disposed below the holding portion holding the substrate. Recycling Department) and so on. Since a large number of pipes are provided around the cup base and below the holding portion, the operation of recovering the deposited filaments becomes complicated.
本揭示,係有鑑於上述情事而進行研究者,其目的在於抑制「在對旋轉的基板供給了處理液之際而產生的絲狀物沈積於保持基板之保持部的下方」之情形。 [用以解決課題之手段]The present disclosure has been made in view of the above-mentioned circumstances, and the purpose of the research is to suppress the situation where "a filament formed when a processing liquid is supplied to a rotating substrate is deposited under the holding portion holding the substrate". [Means to solve the problem]
本揭示之一態樣的基板處理裝置,係具備有:保持部,保持基板;旋轉驅動部,使保持部旋轉;處理液供給部,對保持部所保持之基板供給處理液,該保持部,係藉由旋轉驅動部而旋轉;及第1捕捉部,被配置於前述保持部之下方,捕捉因處理液被供給至旋轉之基板而產生的絲狀物。A substrate processing apparatus according to one aspect of the present disclosure includes: a holding portion that holds a substrate; a rotation driving portion that rotates the holding portion; a processing liquid supply portion that supplies a processing liquid to a substrate held by the holding portion; It is rotated by a rotation driving section; and a first capture section is disposed below the holding section and captures a filament formed by the processing liquid being supplied to the rotating substrate.
在本揭示之基板處理裝置中,係藉由被配置於保持部之下方的第1捕捉部,捕捉因處理液被供給至旋轉之基板而產生的絲狀物。藉由在比絲狀物之產生部位即基板更下方配置第1捕捉部的方式,可有效地捕捉絲狀物。藉由以上,根據本揭示之基板處理裝置,可抑制「在對旋轉的基板供給了處理液之際而產生的絲狀物沈積於保持部之下方」的情形。In the substrate processing apparatus of the present disclosure, the filaments generated when the processing liquid is supplied to the rotating substrate are captured by the first capturing portion disposed below the holding portion. By arranging the first capturing portion below the substrate where the filament is generated, that is, the filament can be effectively captured. As described above, according to the substrate processing apparatus of the present disclosure, it is possible to suppress a situation where "a filament is generated under a holding portion when a processing liquid is supplied to a rotating substrate".
上述基板處理裝置,係更具備有:回收部,接取漏出至基板之背面側的處理液,第1捕捉部,係亦可被配置於保持部及回收部之間。藉由在比回收部更上方配置第1捕捉部的方式,可抑制絲狀物沈積於容易沈積絲狀物的回收部之情形。The above-mentioned substrate processing apparatus further includes a recovery unit for receiving the processing liquid leaked to the back surface side of the substrate, and the first capture unit may be disposed between the holding unit and the recovery unit. By arranging the first capture portion above the recovery portion, it is possible to suppress the deposition of the filaments in the recovery portion where the filaments are easily deposited.
上述基板處理裝置,係亦可更具備有:背面沖洗液供給部,朝向基板之背面供給背面沖洗液。藉由背面沖洗液被供給至基板之背面的方式,可抑制被供給至基板之表面的處理液迴繞至基板之背面。又,供給至基板之背面的背面沖洗液,係跳返於該背面,且亦被供給至第1捕捉部,該第1捕捉部,係被配置於比基板之背面更下方。藉此,可藉由背面沖洗液來沖洗第1捕捉部所捕捉的絲狀物。由於沖洗掉之捕捉物呈液化,因此,當為絲狀時,不會沈積於回收部。The above-mentioned substrate processing apparatus may further include a back-side rinsing liquid supply unit that supplies a back-side rinsing liquid to the back surface of the substrate. By supplying the back surface washing liquid to the back surface of the substrate, it is possible to suppress the processing liquid supplied to the surface of the substrate from being rewound to the back surface of the substrate. In addition, the back surface washing liquid supplied to the back surface of the substrate is returned to the back surface, and is also supplied to the first capture portion, and the first capture portion is disposed below the back surface of the substrate. Thereby, the filaments captured by the first capture unit can be washed with the back washing liquid. Since the washed-out catch is liquefied, it will not be deposited in the recovery section when it is in the form of a filament.
第1捕捉部,係亦可具有第1開口,背面沖洗液供給部,係亦可在第1開口之下方具有開口於上方的吐出口。藉此,從背面沖洗液供給部所供給之背面沖洗液會經由第1開口適當地到達基板的背面,並可適當地達成上述背面沖洗液所致之效果。亦即,在背面沖洗液從背面沖洗液供給部的吐出口朝向上方之際,係可使背面沖洗液通過第1開口而到達基板的背面,並可適當地洗淨背面。由於可充分對背面供給背面沖洗液,因此,從背面落下至第1捕捉部之背面沖洗液的量亦可充足。The first capture unit may have a first opening, and the back-side flushing liquid supply unit may have a discharge opening opened above the lower opening. Thereby, the back surface rinsing liquid supplied from the back surface rinsing liquid supply unit will appropriately reach the back surface of the substrate through the first opening, and the effect due to the back surface rinsing liquid can be appropriately achieved. That is, when the back-side washing liquid is directed upward from the discharge port of the back-side washing liquid supply unit, the back-side washing liquid can be passed through the first opening to reach the back of the substrate, and the back can be properly cleaned. Since the back surface rinsing liquid can be sufficiently supplied to the back surface, the amount of the back surface rinsing liquid dropped from the back surface to the first capturing portion can also be sufficient.
第1捕捉部,係亦可與保持部獨立個體地構成並固定。第1捕捉部被設成為相對於保持部為獨立個體之不旋轉(位置被固定)的構件,藉此,與旋轉的情形相比,可更有效地捕捉絲狀物。The first capture unit may be configured and fixed independently of the holding unit. The first capturing portion is provided as a non-rotating (fixed position) member which is an independent individual from the holding portion, and thereby, the wire can be captured more effectively than when rotating.
第1捕捉部,係與保持部一體設置,亦可與保持部一起旋轉。藉由第1捕捉部旋轉的方式,可使背面沖洗液流向第1捕捉部中之不同面。藉此,可藉由背面沖洗液更有效地沖洗第1捕捉部所捕捉的絲狀物。The first capturing portion is integrally provided with the holding portion, and may be rotated together with the holding portion. By rotating the first capturing portion, the back surface washing liquid can be caused to flow to a different surface of the first capturing portion. Thereby, the filaments captured by the 1st capture part can be rinsed more effectively with the back surface washing liquid.
第1捕捉部,係亦可被形成為板狀。藉此,即便在基板處理裝置內之有限的空間中,亦可藉由簡單之構成來回收絲狀物。The first capturing portion may be formed in a plate shape. Thereby, even in a limited space in the substrate processing apparatus, the filaments can be recovered with a simple configuration.
第1捕捉部,係亦可相對於與基板之背面平行的面而傾斜。藉此,可設成為容易流動背面沖洗液的構成(可使絲狀物適當地液化的構成)。The first capturing portion may be inclined with respect to a surface parallel to the back surface of the substrate. Thereby, it can be set as the structure (the structure which can liquefy a filament suitably) which can flow a back surface washing liquid easily.
上述基板處理裝置,係更具備有:排氣流路,在從外側包圍保持部之位置,沿上下方向延伸;及第2捕捉部,在排氣流路之上部,以覆蓋排氣流路的方式而配置,且捕捉絲狀物,第2捕捉部,係亦可具有:開口部,使流動於排氣流路的排氣通過。絲狀物,係因處理液從旋轉之基板的端部被甩離而產生。因此,絲狀物,係容易產生於基板之端部側亦即保持部的外側。亦即,在從外側包圍保持部之位置,沿上下方向延伸的排氣流路,係容易堵塞有絲狀物。該點,以覆蓋排氣流路的方式設置第2捕捉部,藉此,可抑制絲狀物堵塞於排氣流路。又,在第2捕捉部,係形成有使排氣通過的開口部。藉此,可捕捉絲狀物,並且適當地進行排氣流路中之排氣。 [發明之效果]The substrate processing apparatus further includes: an exhaust flow path extending in a vertical direction at a position that surrounds the holding portion from the outside; and a second catching portion that covers the exhaust flow path above the exhaust flow path. The second capturing portion may be arranged in a manner that captures the filament, and the second capturing portion may include an opening to allow the exhaust gas flowing through the exhaust gas flow path to pass through. The filaments are generated when the processing liquid is thrown away from the end of the rotating substrate. Therefore, the filaments are easily generated on the end portion side of the substrate, that is, outside the holding portion. In other words, at the position surrounding the holding portion from the outside, the exhaust flow path extending in the up-and-down direction is liable to block the filaments. At this point, the second catching portion is provided so as to cover the exhaust flow path, thereby preventing the filaments from clogging the exhaust flow path. Further, the second catching portion is formed with an opening through which exhaust gas passes. Thereby, the filaments can be captured, and the exhaust in the exhaust flow path can be appropriately performed. [Effect of the invention]
根據本揭示,可抑制「在對旋轉的基板供給了處理液之際而產生的絲狀物沈積於保持基板之保持部的下方」之情形。According to the present disclosure, it is possible to suppress a situation where "a filament formed when a processing liquid is supplied to a rotating substrate is deposited under a holding portion of a holding substrate".
[第1實施形態] 以下,參照圖面,詳細地說明關於第1實施形態。在說明中,對同一要素或具有同一功能的要素標記同一符號,並省略重複的說明。[First Embodiment] The following describes the first embodiment in detail with reference to the drawings. In the description, the same elements or elements having the same function are denoted by the same symbols, and repeated descriptions are omitted.
[基板處理系統] 基板處理系統1,係對基板施予感光性被膜之形成、該感光性被膜之曝光及該感光性被膜之顯像的系統。處理對象之基板,係例如半導體之晶圓W。感光性被膜,係例如光阻膜。[Substrate processing system] (1) The substrate processing system 1 is a system for applying a photosensitive film to a substrate, exposing the photosensitive film, and developing the photosensitive film. The substrate to be processed is, for example, a wafer W of a semiconductor. The photosensitive coating is, for example, a photoresist film.
基板處理系統1,係具備有塗佈・顯像裝置2與曝光裝置3。曝光裝置3,係進行被形成於晶圓W上之光阻膜的曝光處理。具體而言,係藉由液浸曝光等的方法,對光阻膜之曝光對象部分照射能量線。塗佈・顯像裝置2,係在藉由曝光裝置3進行曝光處理之前,進行在晶圓W之表面形成光阻膜的處理,並在曝光處理後,進行光阻膜之顯像處理。The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3. The exposure device 3 performs an exposure process of a photoresist film formed on the wafer W. Specifically, an energy ray is irradiated to the exposure target portion of the photoresist film by a method such as liquid immersion exposure. The coating and developing device 2 performs a process of forming a photoresist film on the surface of the wafer W before performing the exposure process by the exposure device 3, and performs a photoresist film development process after the exposure process.
(塗佈・顯像裝置) 以下,作為基板處理裝置之一例,說明塗佈・顯像裝置2的構成。如圖1~圖3所示,塗佈・顯像裝置2,係具備有載體區塊4、處理區塊5、介面區塊6及控制器100。(Coating and Developing Apparatus) The following describes the configuration of the coating and developing apparatus 2 as an example of a substrate processing apparatus. As shown in FIGS. 1 to 3, the coating and developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a controller 100.
載體區塊4,係進行晶圓W朝塗佈・顯像裝置2內之導入及晶圓W從塗佈・顯像裝置2內之導出。例如,載體區塊4,係可支撐晶圓W用之複數個載體11,且內藏有收授臂A1。載體11,係例如收容圓形之複數片晶圓W。收授臂A1,係從載體11取出晶圓W而傳遞至處理區塊5,並從處理區塊5接收晶圓W而返回到載體11內。The carrier block 4 is used to introduce the wafer W into the coating and developing device 2 and to carry out the wafer W from the coating and developing device 2. For example, the carrier block 4 can support a plurality of carriers 11 for the wafer W, and has a receiving arm A1 inside. The carrier 11 contains, for example, a plurality of wafers W in a circular shape. The receiving arm A1 takes out the wafer W from the carrier 11 and transfers it to the processing block 5, and receives the wafer W from the processing block 5 and returns it to the carrier 11.
處理區塊5,係具有複數個處理模組14,15,16,17。如圖2及圖3所示,處理模組14,15,16,17,係內建有:複數個液處理單元U1;複數個熱處理單元U2;及搬送臂A3,將晶圓W搬送至該些單元。處理模組17,係更內建有:直接搬送臂A6,不經由液處理單元U1及熱處理單元U2搬送晶圓W。液處理單元U1,係將處理液塗佈於晶圓W之表面。熱處理單元U2,係例如內建有熱板及冷卻板,藉由熱板來加熱晶圓W,並藉由冷卻板來冷卻加熱後的晶圓W而進行熱處理。The processing block 5 has a plurality of processing modules 14, 15, 16, and 17. As shown in FIG. 2 and FIG. 3, the processing modules 14, 15, 16, 17, and the system include: a plurality of liquid processing units U1; a plurality of heat treatment units U2; and a transfer arm A3, which transfers the wafer W to the Those units. The processing module 17 is further built-in: a direct transfer arm A6, and the wafer W is transferred without passing through the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 applies a processing liquid to the surface of the wafer W. The heat treatment unit U2 includes, for example, a built-in hot plate and a cooling plate, and the wafer W is heated by the hot plate, and the heated wafer W is cooled by the cooling plate to perform heat treatment.
處理模組14,係藉由液處理單元U1及熱處理單元U2,在晶圓W的表面上形成下層膜。處理模組14之液處理單元U1,係將下層膜形成用之處理液塗佈於晶圓W上。處理模組14之熱處理單元U2,係進行伴隨著下層膜的形成之各種熱處理。The processing module 14 forms a lower layer film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 14 applies a processing liquid for forming a lower layer film on the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments with the formation of an underlying film.
處理模組15,係藉由液處理單元U1及熱處理單元U2,在下層膜上形成光阻膜。處理模組15之液處理單元U1,係將光阻膜形成用之處理液(塗佈液)塗佈於下層膜上。處理模組15之熱處理單元U2,係進行伴隨著光阻膜的形成之各種熱處理。關於處理模組15之液處理單元U1的細節,係如後述。The processing module 15 forms a photoresist film on the lower film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 15 is a coating liquid (coating liquid) for forming a photoresist film on the lower layer film. The heat treatment unit U2 of the processing module 15 performs various heat treatments with the formation of a photoresist film. The details of the liquid processing unit U1 of the processing module 15 will be described later.
處理模組16,係藉由液處理單元U1及熱處理單元U2,在光阻膜上形成上層膜。處理模組16之液處理單元U1,係將上層膜形成用之處理液塗佈於光阻膜上。處理模組16之熱處理單元U2,係進行伴隨著上層膜的形成之各種熱處理。The processing module 16 forms an upper film on the photoresist film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 16 applies a processing liquid for forming an upper layer film on the photoresist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments with the formation of an upper film.
處理模組17,係藉由液處理單元U1及熱處理單元U2,進行曝光後之光阻膜的顯像處理。處理模組17之液處理單元U1,係在將顯像用之處理液(顯像液)塗佈於曝光完成的晶圓W之表面上後,藉由洗淨用之處理液(沖洗液)來將其沖洗掉,藉此,進行光阻膜之顯像處理。處理模組17之熱處理單元U2,係進行伴隨著顯像處理之各種熱處理。作為熱處理之具體例,係可列舉出顯像處理前的加熱處理(PEB:Post Exposure Bake)、顯像處理後的加熱處理(PB:Post Bake)等。The processing module 17 performs the development processing of the photoresist film after exposure by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 17 is coated with the processing liquid (developing liquid) for development on the surface of the wafer W after exposure, and then the processing liquid (rinsing liquid) for cleaning is applied. Then, it is washed away, and the development process of the photoresist film is performed. The heat treatment unit U2 of the processing module 17 performs various heat treatments accompanied by development processing. Specific examples of the heat treatment include heat treatment before development processing (PEB: Post Exposure Bake), heat treatment after development processing (PB: Post Bake), and the like.
在處理區塊5內之載體區塊4側,係設置有棚架單元U10。棚架單元U10,係被區劃成沿上下方向排列的複數個格室。在棚架單元U10的附近,係設置有升降臂A7。升降臂A7,係使晶圓W在棚架單元U10的格室彼此之間升降。在處理區塊5內之介面區塊6側,係設置有棚架單元U11。棚架單元U11,係被區劃成沿上下方向排列的複數個格室。On the carrier block 4 side in the processing block 5, a scaffold unit U10 is provided. The shelving unit U10 is divided into a plurality of cells arranged in the up-down direction. A lifting arm A7 is provided near the shelving unit U10. The lifting arm A7 lifts and lowers the wafer W between the cells of the shelf unit U10. On the side of the interface block 6 in the processing block 5, a scaffold unit U11 is provided. The shelving unit U11 is divided into a plurality of cells arranged in the up-down direction.
介面區塊6,係在與曝光裝置3之間進行晶圓W之收授。例如介面區塊6,係內建有收授臂A8,並被連接於曝光裝置3。收授臂A8,係將被配置於棚架單元U11之晶圓W傳遞至曝光裝置3,並從曝光裝置3接收晶圓W而返回到棚架單元U11。The interface block 6 is used for receiving and receiving wafers W from the exposure device 3. For example, the interface block 6 is provided with a receiving arm A8 and is connected to the exposure device 3. The receiving arm A8 transfers the wafer W arranged in the shelf unit U11 to the exposure device 3, receives the wafer W from the exposure device 3, and returns to the shelf unit U11.
控制器100,係例如以藉由以下之程序執行塗佈・顯像處理的方式,控制塗佈・顯像裝置2。The controller 100 controls the coating and developing device 2 by, for example, performing the coating and developing process using the following procedure.
首先,控制器100,係以將載體11內之晶圓W搬送至棚架單元U10的方式,控制收授臂A1,並以將該晶圓W配置於處理模組14用之格室的方式,控制升降臂A7。First, the controller 100 controls the receiving arm A1 so as to transfer the wafer W in the carrier 11 to the shelf unit U10, and arranges the wafer W in a compartment for the processing module 14. To control the lifting arm A7.
其次,控制器100,係以將棚架單元U10之晶圓W搬送至處理模組14內之液處理單元U1及熱處理單元U2的方式,控制搬送臂A3,並以在該晶圓W之表面形成下層膜的方式,控制液處理單元U1及熱處理單元U2。其後,控制器100,係以使形成有下層膜之晶圓W返回到棚架單元U10的方式,控制搬送臂A3,並以將該晶圓W配置於處理模組15用之格室的方式,控制升降臂A7。Secondly, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 14 so as to transfer the wafer W on the surface of the wafer W. The method of forming the lower layer film is to control the liquid processing unit U1 and the heat treatment unit U2. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W on which the lower-layer film is formed is returned to the shelf unit U10, and arranges the wafer W in the compartment of the processing module 15 Mode to control the lifting arm A7.
其次,控制器100,係以將棚架單元U10之晶圓W搬送至處理模組15內之液處理單元U1及熱處理單元U2的方式,控制搬送臂A3,並以在該晶圓W之下層膜上形成光阻膜的方式,控制液處理單元U1及熱處理單元U2。其後,控制器100,係以使晶圓W返回到棚架單元U10的方式,控制搬送臂A3,並以將該晶圓W配置於處理模組16用之格室的方式,控制升降臂A7。Secondly, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the scaffolding unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 15 so as to lower the wafer W The method of forming a photoresist film on the film controls the liquid processing unit U1 and the heat treatment unit U2. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W is returned to the shelf unit U10, and controls the lift arm so that the wafer W is arranged in the compartment for the processing module 16. A7.
其次,控制器100,係以將棚架單元U10之晶圓W搬送至處理模組16內之各單元的方式,控制搬送臂A3,並以在該晶圓W之光阻膜上形成上層膜的方式,控制液處理單元U1及熱處理單元U2。其後,控制器100,係以使晶圓W返回到棚架單元U10的方式,控制搬送臂A3,並以將該晶圓W配置於處理模組17用之格室的方式,控制升降臂A7。Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 16, and forms an upper film on the photoresist film of the wafer W In this manner, the liquid processing unit U1 and the heat treatment unit U2 are controlled. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W is returned to the shelf unit U10, and controls the lift arm so that the wafer W is disposed in the compartment for the processing module 17. A7.
其次,控制器100,係以將棚架單元U10之晶圓W搬送至棚架單元U11的方式,控制直接搬送臂A6,並以將該晶圓W送出至曝光裝置3的方式,控制收授臂A8。其後,控制器100,係以從曝光裝置3接收施予了曝光處理之晶圓W而返回到棚架單元U11的方式,控制收授臂A8。Next, the controller 100 controls the direct transfer arm A6 to transfer the wafer W of the gantry unit U10 to the gantry unit U11, and controls the receipt and delivery of the wafer W to the exposure device 3 Arm A8. Thereafter, the controller 100 controls the receiving arm A8 so as to receive the wafer W subjected to the exposure process from the exposure apparatus 3 and return to the shelf unit U11.
其次,控制器100,係以將棚架單元U11之晶圓W搬送至處理模組17內之各單元的方式,控制搬送臂A3,並以在該晶圓W之光阻膜施予顯像處理的方式,控制液處理單元U1及熱處理單元U2。其後,控制器100,係以使晶圓W返回到棚架單元U10的方式,控制搬送臂A3,並以使該晶圓W返回到載體11內的方式,控制升降臂A7及收授臂A1。以上,塗佈・顯像處理結束。Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U11 to each unit in the processing module 17, and applies imaging processing to a photoresist film on the wafer W. Mode, controlling the liquid processing unit U1 and the heat treatment unit U2. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W is returned to the shelf unit U10, and controls the lift arm A7 and the receiving arm so that the wafer W is returned to the carrier 11. A1. This completes the application and development processing.
另外,基板處理裝置的具體構成,係不限於以上所例示之塗佈・顯像裝置2的構成。基板處理裝置,係只要具備有被膜形成用之液處理單元U1(處理模組14,15,16之液處理單元U1)與可對其進行控制的控制器100,則亦可為任一種基板處理裝置。The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating and developing apparatus 2 exemplified above. The substrate processing apparatus may be any type of substrate processing as long as it includes a liquid processing unit U1 (liquid processing unit U1 for processing modules 14, 15, 16) for forming a film and a controller 100 capable of controlling the same. Device.
[液處理單元] 接著,詳細地說明關於處理模組15之液處理單元U1。如圖4所示,處理模組15之液處理單元U1,係具備有:旋轉卡盤61(保持部);塗佈液供給噴嘴62(處理液供給部);溶劑供給噴嘴63;旋轉驅動部64;杯基座65(回收部);背面沖洗液供給噴嘴77(背面沖洗液供給部);排出部70;及捕捉板30(第1捕捉部)。[Liquid Processing Unit] Next, the liquid processing unit U1 of the processing module 15 will be described in detail. As shown in FIG. 4, the liquid processing unit U1 of the processing module 15 includes: a spin chuck 61 (holding portion); a coating liquid supply nozzle 62 (processing liquid supply portion); a solvent supply nozzle 63; and a rotation driving portion. 64; a cup base 65 (recovery section); a backside rinse liquid supply nozzle 77 (backside rinse liquid supply section); a discharge section 70; and a capture plate 30 (first capture section).
(旋轉卡盤) 旋轉卡盤61,係水平地保持晶圓W(基板)。旋轉卡盤61,係經由延伸於上下方向(垂直方向)的軸桿66,被連結於旋轉驅動部64。旋轉卡盤61,係因應旋轉驅動部64使軸桿66旋轉的方式,繞垂直軸旋轉。旋轉卡盤61繞垂直軸旋轉,藉此,被保持於旋轉卡盤61之晶圓W繞垂直軸旋轉。又,旋轉卡盤61,係因應旋轉驅動部64使軸桿66升降的方式,沿上下方向升降。(Rotary chuck) The spin chuck 61 holds the wafer W (substrate) horizontally. The spin chuck 61 is connected to the rotation driving section 64 via a shaft 66 extending in the vertical direction (vertical direction). The spin chuck 61 rotates about the vertical axis in accordance with the manner in which the rotation drive unit 64 rotates the shaft 66. The spin chuck 61 is rotated about the vertical axis, and thereby the wafer W held by the spin chuck 61 is rotated about the vertical axis. The spin chuck 61 is moved up and down in accordance with the manner in which the shaft 66 is raised and lowered by the rotation driving unit 64.
(旋轉驅動部) 轉軸驅動部64,係使旋轉卡盤61繞垂直軸旋轉。旋轉驅動部64,係藉由使軸桿66旋轉的方式,使被連結於該軸桿66之上端的旋轉卡盤61旋轉。又,旋轉驅動部64,係藉由使軸桿66升降的方式,使被連結於該軸桿66之上端的旋轉卡盤61沿上下方向升降。(Rotary Drive Unit) The rotary shaft drive unit 64 rotates the spin chuck 61 about the vertical axis. The rotation driving unit 64 rotates the rotation chuck 61 connected to the upper end of the shaft 66 by rotating the shaft 66. In addition, the rotation driving unit 64 raises and lowers the rotary chuck 61 connected to the upper end of the shaft 66 in a vertical direction by raising and lowering the shaft 66.
旋轉驅動部64,係針對處理模組15之液處理單元U1中的各個工程,使旋轉卡盤61以適當的速度旋轉。在該工程中,係至少包含有預濕工程、塗佈液供給工程及塗佈液擴展工程。所謂預濕工程,係用以「在將塗佈液塗佈於晶圓W之前,在晶圓W上形成有機溶劑的液膜,藉此,使塗佈液在晶圓W上容易擴展,並且氣泡難以混入晶圓W與塗佈液之間」的工程。所謂塗佈液供給工程,係將高黏度光阻劑等之塗佈液供給至晶圓W的工程。塗佈液擴展工程,係將被塗佈於晶圓W上之塗佈液擴展至晶圓W之周緣部的工程。在塗佈膜擴展工程中,因晶圓W旋轉,一部分的塗佈膜從晶圓W的端部被甩離,高黏性(例如1000cp以上)之塗佈膜,係固化成絲狀而成為絲狀物。旋轉驅動部64,係在預濕工程中,例如使晶圓W以500~1500rpm旋轉。旋轉驅動部64,係在塗佈液供給工程中,例如使晶圓W以800~1500rpm旋轉。旋轉驅動部64,係在塗佈液擴展工程中,例如使晶圓W以500~1200rpm旋轉。The rotation driving unit 64 rotates the spin chuck 61 at an appropriate speed for each process in the liquid processing unit U1 of the processing module 15. This process includes at least a pre-wetting process, a coating liquid supply process, and a coating liquid expansion process. The so-called pre-wet process is used to "form a liquid film of an organic solvent on the wafer W before the coating solution is applied to the wafer W, thereby making the coating solution easily spread on the wafer W, It is difficult for air bubbles to mix between the wafer W and the coating solution. The coating liquid supply process is a process of supplying a coating liquid such as a high-viscosity photoresist to the wafer W. The coating liquid expansion process is a process of expanding the coating liquid applied on the wafer W to the peripheral portion of the wafer W. In the coating film expansion process, due to the rotation of the wafer W, a part of the coating film is thrown away from the end of the wafer W, and the coating film with high viscosity (for example, 1000 cp or more) is cured into a filament and becomes Filament. The rotation driving unit 64 is used in a pre-wetting process, and for example, the wafer W is rotated at 500 to 1500 rpm. The rotation driving unit 64 is used in a coating liquid supply process, for example, to rotate the wafer W at 800 to 1500 rpm. The rotation driving unit 64 is used in the coating liquid expansion process, for example, to rotate the wafer W at 500 to 1200 rpm.
(塗佈液供給噴嘴) 塗佈液供給噴嘴62,係在塗佈液供給工程中,將光阻劑等的塗佈液(處理液)供給至旋轉卡盤61所保持之晶圓W,該旋轉卡盤61,係藉由旋轉驅動部64而旋轉。塗佈液供給噴嘴62,係例如供給有機溶劑濃度為70%以下之高黏性(例如2000cp以上)的塗佈液。塗佈液供給噴嘴62,係從晶圓W之大致中心位置上方,對晶圓W的表面W1供給塗佈液。另外,塗佈液供給噴嘴62,係亦可從晶圓W的中心位置與周緣部之間的位置上方供給塗佈液,或亦可一面在晶圓W的中心位置與周緣部之間進行掃描,一面供給塗佈液。(Coating liquid supply nozzle) The coating liquid supply nozzle 62 supplies a coating liquid (treatment liquid) such as a photoresist to the wafer W held by the spin chuck 61 in the coating liquid supply process. The spin chuck 61 is rotated by a rotation driving section 64. The coating liquid supply nozzle 62 supplies, for example, a coating liquid having a high viscosity (for example, 2000 cp or more) with an organic solvent concentration of 70% or less. The coating liquid supply nozzle 62 supplies the coating liquid to the surface W1 of the wafer W from above the approximate center of the wafer W. In addition, the coating liquid supply nozzle 62 may supply the coating liquid from above the position between the center position of the wafer W and the peripheral edge portion, or may scan between the center position of the wafer W and the peripheral edge side. , While supplying the coating liquid.
(溶劑供給噴嘴) 溶劑供給噴嘴63,係在預濕工程中,將稀釋劑等的有機溶劑供給至旋轉卡盤61所保持之晶圓W,該旋轉卡盤61,係藉由旋轉驅動部64而旋轉。溶劑供給噴嘴63,係一面在晶圓W的中心位置與周緣部例如以10~200mm/sec的速度進行掃描,一面供給有機溶劑。另外,溶劑供給噴嘴63,係亦可在晶圓W之大致中心位置上方停止的狀態下,供給有機溶劑。(Solvent Supply Nozzle) The solvent supply nozzle 63 supplies organic solvents, such as thinner, to the wafer W held by the spin chuck 61 during the pre-wet process. While spinning. The solvent supply nozzle 63 supplies an organic solvent while scanning at a center position and a peripheral portion of the wafer W at a speed of, for example, 10 to 200 mm / sec. In addition, the solvent supply nozzle 63 may supply an organic solvent in a state where it is stopped above the approximate center position of the wafer W.
(杯基座) 杯基座65,係在旋轉卡盤61之下方,以包圍軸桿66的方式而配置。杯基座65,係接取並回收漏出至晶圓W之背面W2(晶圓W中之與供給有塗佈膜的表面W1相反側之面)側而落下的塗佈液。(Cup base) The cup base 65 is disposed below the spin chuck 61 and is arranged to surround the shaft 66. The cup base 65 receives and collects the coating liquid leaked to the back surface W2 (the surface of the wafer W opposite to the surface W1 to which the coating film is supplied) of the wafer W and dropped.
(背面沖洗液供給噴嘴) 背面沖洗液供給噴嘴77,係朝向晶圓W之背面W2供給稀釋劑等的有機溶劑即背面沖洗液。背面沖洗液供給噴嘴77,係被設置於杯基座65的例如2部位,並具有在後述之捕捉板30之通過口30b的下方,開口於上方之吐出口。在塗佈液擴展工程中,背面沖洗液被供給至晶圓W之背面W2,藉此,可抑制被供給至表面W1的塗佈膜迴繞至背面W2側。又,在塗佈膜擴展工程中,係伴隨著晶圓W之旋轉,在晶圓W之端部產生塗佈膜固化成絲狀的絲狀物,藉由背面沖洗液被供給至晶圓W之背面W2的方式,可溶解產生後當下的絲狀物。而且,供給至晶圓W之背面W2的背面沖洗液,係跳返於背面W2,且亦被供給至捕捉板30(後述),該捕捉板30,係被配置於背面W2的下方。(Backside rinse liquid supply nozzle) The backside rinse liquid supply nozzle 77 supplies a backside rinse liquid, which is an organic solvent such as a diluent, to the back surface W2 of the wafer W. The back-side rinsing liquid supply nozzle 77 is provided at, for example, two positions of the cup base 65, and has a below-mentioned catching plate 30 passing port 30b, which is described later, and is opened to an upper discharge port. In the coating liquid expansion process, the back surface flushing liquid is supplied to the back surface W2 of the wafer W, whereby the coating film supplied to the surface W1 can be prevented from being rewound to the back surface W2 side. In the coating film expansion process, the coating film is solidified into filaments at the end of the wafer W along with the rotation of the wafer W, and is supplied to the wafer W by a back-side washing solution. The back side W2 method can dissolve the filaments after the generation. In addition, the back surface washing liquid supplied to the back surface W2 of the wafer W is returned to the back surface W2 and is also supplied to a capture plate 30 (described later), which is disposed below the back surface W2.
(排出部) 排出部70,係被配置於從外側包圍旋轉卡盤61的位置,並為排氣及塗佈液之排出(廢液)的構成。排出部70,係作為包圍旋轉卡盤61之處理杯,具有:內側杯71;及外側杯72,被配置於從外側包圍該內側杯71的位置。在內側杯71與外側杯72之間形成有排氣流路80。(Discharge section) The discharge section 70 is configured to be disposed at a position that surrounds the spin chuck 61 from the outside, and is configured to exhaust and discharge (waste liquid) the coating liquid. The discharge unit 70 is a processing cup surrounding the spin chuck 61 and includes an inner cup 71 and an outer cup 72 disposed at positions surrounding the inner cup 71 from the outside. An exhaust flow path 80 is formed between the inner cup 71 and the outer cup 72.
內側杯71,係具有:環狀之傾斜壁79,從與晶圓W之背面W2側周緣部接近的位置朝向外側杯72方向且下方(外側下方)傾斜延伸;及環狀之垂直壁75,接續於傾斜壁79之下端並往垂直下方延伸。該傾斜壁79及垂直壁75,係用以引導從晶圓W之端部所甩離的塗佈液向下流落之構成。外側杯72,係底部被形成於凹部上,並被構成為環狀之液承接部。外側杯72,係在下部形成有廢液口73,並且在比廢液口73更靠近旋轉卡盤61(內側)形成有排氣口78。在廢液口73與排氣口78之間,係形成有從下方朝向上方延伸的隔離壁76。隔離壁76,係在比垂直壁75更內側,延伸至比垂直壁75之下端更上側。藉此,藉由隔離壁76與垂直壁75形成迷宮構造,氣體與液體被適當地分離,可從排氣口78適當地出氣體,並從廢液口73適當地排出液體。The inner cup 71 includes a ring-shaped inclined wall 79 extending obliquely from the position close to the back surface W2 side peripheral edge of the wafer W toward the outer cup 72 and downward (outside lower); and a ring-shaped vertical wall 75. It continues to the lower end of the inclined wall 79 and extends vertically downward. The inclined wall 79 and the vertical wall 75 are configured to guide the coating liquid thrown off from the end of the wafer W to flow downward. The outer cup 72 has a bottom portion formed in the recessed portion and is configured as a ring-shaped liquid receiving portion. The outer cup 72 has a waste liquid port 73 formed in the lower part, and an exhaust port 78 is formed closer to the spin chuck 61 (inside) than the waste liquid port 73. A partition wall 76 is formed between the waste liquid port 73 and the exhaust port 78 and extends from the bottom to the top. The partition wall 76 is located more inward than the vertical wall 75 and extends to an upper side than the lower end of the vertical wall 75. Thereby, by forming a labyrinth structure with the partition wall 76 and the vertical wall 75, the gas and the liquid are appropriately separated, the gas can be appropriately discharged from the exhaust port 78, and the liquid can be appropriately discharged from the waste liquid port 73.
(捕捉板) 捕捉板30,係被配置於旋轉卡盤61之下方,更詳細而言係被配置於旋轉卡盤61及杯基座65之間,為捕捉因塗佈液被供給至旋轉之晶圓W而產生的絲狀物。更詳細而言,捕捉板30,係以包圍軸桿66的方式,被配置於杯基座65之上面。捕捉板30,係與旋轉卡盤61獨立個體地構成並固定之板狀構件。捕捉板30,係被固定於杯基座65。(Capture plate) The capture plate 30 is disposed below the spin chuck 61, and more specifically, is disposed between the spin chuck 61 and the cup base 65 to capture the supply of the coating solution to the spin The filaments generated from the wafer W. More specifically, the capture plate 30 is arranged on the cup base 65 so as to surround the shaft 66. The capture plate 30 is a plate-like member that is configured and fixed independently of the spin chuck 61. The capture plate 30 is fixed to the cup base 65.
如圖5所示,捕捉板30,係被形成為圓盤狀。捕捉板30,係具有:軸孔30a,使軸桿66通過;通過口30b(第1開口),使從背面沖洗液供給噴嘴77朝向晶圓W之背面W2所供給的背面沖洗液通過;及銷孔30x,用以***固定於杯基座65用的定位銷。軸孔30a,係被形成於捕捉板30中之大致中央部分。通過口30b,係被形成於「在將捕捉板30固定於杯基座65上的狀態下,可使來自背面沖洗液供給噴嘴77之背面沖洗液通過」的位置。在本實施形態中,係由於背面沖洗液供給噴嘴77被設置於杯基座65的2部位,因此,對應地形成之通過口30b亦被形成於捕捉板30的2部位。銷孔30x,係例如被形成於夾持捕捉板30之中央部分而成為對稱的2部位。As shown in FIG. 5, the capture plate 30 is formed in a disc shape. The capture plate 30 includes: a shaft hole 30a through which the shaft 66 passes; and a port 30b (first opening) through which the back surface washing liquid supplied from the back surface washing liquid supply nozzle 77 toward the back surface W2 of the wafer W passes; and The pin hole 30x is used to insert a positioning pin for fixing to the cup base 65. The shaft hole 30 a is formed in a substantially central portion of the capture plate 30. The through-port 30b is formed at a position where the back-side flushing liquid from the back-side flushing liquid supply nozzle 77 can pass through while the capture plate 30 is fixed to the cup base 65. In this embodiment, since the back-side washing liquid supply nozzles 77 are provided at two positions of the cup base 65, correspondingly formed through ports 30 b are also formed at two positions of the capture plate 30. The pin holes 30x are formed at two positions that are symmetrical to each other, for example, by sandwiching the central portion of the capture plate 30.
捕捉板30,係亦可為施予了用以更適當地捕捉絲狀物的各種處理者。例如,捕捉板30,係亦可在表面具有凹凸部。又,捕捉板30,係亦可為其表面進行了噴粒處理者。又,捕捉板30,係亦可為「具有空氣噴嘴,並藉由空氣噴嘴來控制溫度及濕度或氣流而使絲狀物的狀態變化」者。The capture plate 30 may be a processor provided with various treatments for more appropriately capturing the filaments. For example, the capture plate 30 may have uneven portions on the surface. In addition, the capture plate 30 may be a particle-blasted surface. In addition, the capture plate 30 may be a device that "has an air nozzle and controls the temperature and humidity or the air flow by the air nozzle to change the state of the filament".
捕捉板30,係例如藉由對於不鏽鋼等的金屬、PTFE(Poly Tetra FluoroEthylene)、PTEFE(Poly Chloro Tri Furuoro Ethylene)或聚三氟氯乙烯等的塗佈液具有耐腐蝕性的材料所構成。The capture plate 30 is made of, for example, a material having corrosion resistance to a coating liquid such as a metal such as stainless steel, PTFE (Poly Tetra FluoroEthylene), PTEFE (Poly Chloro Tri Furuoro Ethylene), or polytrifluorochloroethylene.
[第1實施形態之作用效果] 第1實施形態之液處理單元U1,係具備有:旋轉卡盤61,保持晶圓W;旋轉驅動部64,使旋轉卡盤61旋轉;塗佈液供給噴嘴62,對旋轉卡盤61所保持之晶圓W供給塗佈液,該旋轉卡盤61,係藉由旋轉驅動部64而旋轉;杯基座65,回收從晶圓W中之供給有塗佈液的面(表面W1)之相反側的面即背面W2落下的塗佈液;及捕捉板30,被配置於背面W2及杯基座65之間,捕捉因塗佈液被供給至旋轉之晶圓W而產生的絲狀物。[Functions and Effects of the First Embodiment] 液 The liquid processing unit U1 of the first embodiment includes: a spin chuck 61 to hold a wafer W; a rotation driving unit 64 to rotate the spin chuck 61; and a coating liquid supply nozzle 62. The coating liquid is supplied to the wafer W held by the spin chuck 61, and the spin chuck 61 is rotated by the rotation driving portion 64. The cup base 65 recovers the coating supplied from the wafer W. The coating liquid dropped on the back surface W2 on the opposite side of the liquid surface (front surface W1); and the capture plate 30 is disposed between the back surface W2 and the cup base 65 to capture the crystals supplied by the coating liquid to the rotation The filaments produced by the circle W.
在液處理單元U1中,係藉由被配置於背面W2及杯基座65之間的捕捉板30,捕捉因塗佈液被供給至旋轉之晶圓W而產生的絲狀物。藉由在比絲狀物之產生部位即晶圓W更下方配置捕捉板30的方式,可有效地捕捉絲狀物。又,藉由在比杯基座65更上方配置捕捉板30的方式,可抑制絲狀物沈積於杯基座65的情形。藉由以上,根據液處理單元U1,可抑制「在對旋轉的晶圓W供給了塗佈液之際而產生的絲狀物沈積於旋轉卡盤61之下方的空間(例如杯基座65)」之情形。The liquid processing unit U1 captures the filaments generated when the coating liquid is supplied to the rotating wafer W through the capture plate 30 disposed between the back surface W2 and the cup base 65. By arranging the capture plate 30 below the wafer W where the filaments are generated, the filaments can be efficiently captured. In addition, by arranging the capture plate 30 above the cup base 65, it is possible to prevent the filaments from being deposited on the cup base 65. According to the above, the liquid processing unit U1 can suppress "the filaments generated when the coating liquid is supplied to the rotating wafer W from being deposited in the space below the spin chuck 61 (for example, the cup base 65). ".
液處理單元U1,係更具備有:背面沖洗液供給噴嘴77,朝向晶圓W之背面W2供給背面沖洗液。藉由背面沖洗液被供給至晶圓W之背面W2的方式,可抑制被供給至晶圓W之表面W1的塗佈液迴繞至晶圓W之背面W2。又,供給至背面W2的背面沖洗液,係跳返於背面W2,且亦被供給至捕捉板30,該捕捉板30,係被配置於比背面W2更下方。藉此,可藉由背面沖洗液來沖洗捕捉板30所捕捉的絲狀物。由於沖洗掉之捕捉物呈液化,因此,當為絲狀時,不會沈積於杯基座65。The liquid processing unit U1 further includes a back surface washing liquid supply nozzle 77 that supplies a back surface washing liquid toward the back surface W2 of the wafer W. By supplying the back surface washing liquid to the back surface W2 of the wafer W, it is possible to suppress the coating liquid supplied to the surface W1 of the wafer W from being rewound to the back surface W2 of the wafer W. In addition, the back surface washing liquid supplied to the back surface W2 is returned to the back surface W2 and is also supplied to the capture plate 30 which is disposed below the back surface W2. Thereby, the filaments captured by the capture plate 30 can be washed by the back washing liquid. Since the washed-out catch is liquefied, it will not be deposited on the cup base 65 when it is filamentous.
捕捉板30,係具有通過口30b,背面沖洗液供給噴嘴77,係在通過口30b之下方具有開口於上方的吐出口。藉此,從背面沖洗液供給噴嘴77所供給之背面沖洗液會經由通過口30b適當地到達晶圓W之背面W2,並可適當地達成上述背面沖洗液所致之效果。亦即,在背面沖洗液從背面沖洗液供給噴嘴77的吐出口朝向上方之際,係可使背面沖洗液通過通過口30b而到達晶圓W之背面W2,並可適當地洗淨背面W2。由於可充分對背面W2供給背面沖洗液,因此,從背面W2落下至捕捉板30之背面沖洗液的量亦可充足。The catching plate 30 has a passage opening 30b, and a back surface washing liquid supply nozzle 77, and has a discharge opening opened above the passage opening 30b. Thereby, the back surface washing liquid supplied from the back surface washing liquid supply nozzle 77 will appropriately reach the back surface W2 of the wafer W through the through port 30b, and the effect due to the above back washing liquid can be appropriately achieved. That is, when the back-side washing liquid is directed upward from the discharge port of the back-side washing liquid supply nozzle 77, the back-side washing liquid can be passed through the port 30b to reach the back surface W2 of the wafer W, and the back surface W2 can be appropriately cleaned. Since the back surface washing liquid can be sufficiently supplied to the back surface W2, the amount of the back surface washing liquid dropped from the back surface W2 to the back surface of the capture plate 30 can also be sufficient.
另外,在本實施形態中,雖係以「藉由背面沖洗液來沖洗捕捉板30所捕捉的絲狀物」作為說明,但即便捕捉板30所捕捉的絲狀物未被背面沖洗液沖洗掉,亦與以往般絲狀物沈積於杯基座的構成相比,液處理單元之運用變得較容易。亦即,在如以往般絲狀物沈積於杯基座的情況下,係必需直接洗淨設置有較多配管的杯基座等,液處理單元之運用比較繁雜。對此,在以捕捉板30捕捉絲狀物的構成中,係即便絲狀物未被背面沖洗液沖洗掉,亦可藉由將捕捉板30取出而洗淨的方式,輕易除掉絲狀物。藉此,與以往相比,可使液處理單元之運用容易化。In addition, in this embodiment, although the description was made of "rinsing the filaments captured by the capture plate 30 with the back surface washing solution", even if the filaments captured by the capture plate 30 are not rinsed by the back surface washing solution, Compared with the conventional structure in which filaments are deposited on the cup base, the application of the liquid processing unit becomes easier. That is, when the filaments are deposited on the cup base as in the past, it is necessary to directly wash the cup base provided with a large number of pipes, etc., and the use of the liquid processing unit is complicated. In contrast, in the configuration in which the filaments are captured by the capture plate 30, the filaments can be easily removed by taking out and washing the capture plate 30 even if the filaments are not rinsed off by the back washing liquid. . This makes it easier to use the liquid processing unit than in the past.
捕捉板30,係相對於旋轉卡盤61為獨立個體,並被固定於杯基座65上。捕捉板30相對於旋轉卡盤61為獨立個體並不旋轉(位置被固定),藉此,相較於旋轉的情形,可更有效地捕捉絲狀物。The capture plate 30 is an independent body with respect to the spin chuck 61 and is fixed to the cup base 65. The capture plate 30 is an independent individual and does not rotate (the position is fixed) with respect to the spin chuck 61, and thereby, the filament can be captured more effectively than when it is rotated.
捕捉板30,係被形成為板狀。藉此,即便在液處理單元U1內之有限的空間中,亦可藉由簡單之構成來回收絲狀物。The capture plate 30 is formed in a plate shape. Thereby, even in a limited space in the liquid processing unit U1, the filaments can be recovered with a simple configuration.
[第2實施形態] 其次,參閱圖6及圖7,說明關於第2實施形態之液處理單元U1A。另外,在本實施形態的說明中,係主要說明關於與上述第1實施形態相異的點。[Second Embodiment] Next, a liquid processing unit U1A according to a second embodiment will be described with reference to Figs. 6 and 7. It should be noted that in the description of this embodiment, the points that are different from the first embodiment will be mainly described.
如圖6所示,第2實施形態之液處理單元U1A,係具備有捕捉板40以代替第1實施形態中所說明的捕捉板30。捕捉板40,係與旋轉卡盤61一體設置,並與旋轉卡盤61一起旋轉。更詳細而言,捕捉板40,係被配置於旋轉卡盤61的下面,並與旋轉卡盤61一起旋轉。As shown in FIG. 6, the liquid processing unit U1A of the second embodiment is provided with a capturing plate 40 instead of the capturing plate 30 described in the first embodiment. The capture plate 40 is integrally provided with the spin chuck 61 and rotates together with the spin chuck 61. More specifically, the capture plate 40 is disposed below the spin chuck 61 and rotates together with the spin chuck 61.
如圖7所示,圓盤狀之捕捉板40,係沿著周方向,形成有複數個用以使背面沖洗液通過的通過口40b。在圖7所示的例子中,在捕捉板40形成有8處通過口40b。在捕捉板40中,係於供給有背面沖洗液的位置(徑方向之位置)中,至少通過口40b之區域比未成為通過口40b (使背面沖洗液不通過)之區域寬廣。藉此,即便在捕捉板40旋轉的構成中,亦可使背面沖洗液從通過口40b適當地通過。As shown in FIG. 7, the disc-shaped capture plate 40 is formed with a plurality of through-ports 40 b along the circumferential direction for allowing the back surface washing liquid to pass through. In the example shown in FIG. 7, eight passing ports 40 b are formed in the capture plate 40. The capture plate 40 is located at a position (position in the radial direction) where the back surface rinsing liquid is supplied, and at least the area passing through the port 40b is wider than the area that does not become the passage opening 40b (the back surface washing liquid is not allowed to pass). Thereby, even in the configuration in which the capture plate 40 is rotated, the back surface washing liquid can be appropriately passed through the passage port 40b.
如上述般,在第2實施形態之液處理單元U1A中,捕捉板40與旋轉卡盤61一體設置,並與旋轉卡盤61一起旋轉。藉由捕捉板40旋轉的方式,可使背面沖洗液流向捕捉板40中之不同面。藉此,可藉由背面沖洗液更有效地沖洗捕捉板40所捕捉的絲狀物。As described above, in the liquid processing unit U1A of the second embodiment, the capture plate 40 is provided integrally with the spin chuck 61 and rotates together with the spin chuck 61. By rotating the capture plate 40, the back-side washing liquid can flow to different surfaces in the capture plate 40. Thereby, the filaments captured by the capture plate 40 can be more effectively washed by the back washing liquid.
又,藉由捕捉板40被配置於旋轉卡盤61之下面的方式,可簡單地設成為上述之捕捉板40旋轉的構成,亦即藉由背面沖洗液來沖洗絲狀物的構成。In addition, the configuration in which the capture plate 40 is disposed below the spin chuck 61 can be simply configured as the structure in which the capture plate 40 is rotated, that is, the structure in which the filaments are rinsed by the back surface washing solution.
[第3實施形態] 其次,參閱圖8,說明關於第3實施形態之液處理單元U1B。另外,在本實施形態的說明中,係主要說明關於與上述第1及第2實施形態相異的點。[Third Embodiment] Next, a liquid processing unit U1B according to a third embodiment will be described with reference to Fig. 8. In the description of this embodiment, the points that are different from the first and second embodiments described above will be mainly described.
如圖8所示,第3實施形態之液處理單元U1B,係具備有捕捉板50以代替第1實施形態中所說明的捕捉板30及第2實施形態中所說明的捕捉板40。捕捉板50,係相對於與晶圓W之背面W2平行的面而傾斜。更詳細而言,捕捉板50,係接近軸桿66之側(內側)被設成為厚壁,並且隨著接近排出部70之側(外側)被設成薄壁,相對於與晶圓W之背面W2平行的面而傾斜。As shown in FIG. 8, the liquid processing unit U1B according to the third embodiment includes a capture plate 50 instead of the capture plate 30 described in the first embodiment and the capture plate 40 described in the second embodiment. The capture plate 50 is inclined with respect to a surface parallel to the back surface W2 of the wafer W. More specifically, the capture plate 50 is provided with a thick wall on the side (inside) close to the shaft 66 and is formed with a thin wall as the side (outside) near the discharge section 70 is formed. The back surface W2 is inclined parallel to the plane.
在像這樣傾斜的捕捉板50中,跳返於晶圓W之背面W2而到達捕捉板50的背面沖洗液BR容易在捕捉板50上流向排出部70側(參閱圖8)。亦即,可設成為容易流動背面沖洗液BR的構成。藉此,可有效地沖洗在捕捉板50所捕捉的絲狀物SI,並可使絲狀物SI適當地液化。In the capture plate 50 tilted as described above, the back-side washing liquid BR that jumps to the back surface W2 of the wafer W and reaches the capture plate 50 easily flows to the discharge portion 70 side on the capture plate 50 (see FIG. 8). That is, it can be set as the structure which flows the back surface washing | cleaning liquid BR easily. Accordingly, the filaments SI captured by the capture plate 50 can be effectively washed, and the filaments SI can be appropriately liquefied.
[第4實施形態] 其次,參閱圖9及圖10,說明關於第4實施形態之液處理單元U1C。另外,在本實施形態的說明中,係主要說明關於與上述第1~第3實施形態相異的點。[Fourth Embodiment] Next, a liquid processing unit U1C according to a fourth embodiment will be described with reference to Figs. 9 and 10. In the description of the present embodiment, points that are different from the first to third embodiments described above will be mainly described.
如圖9所示,第4實施形態之液處理單元U1C,係除了第1實施形態所說明的構成以外,另在從外側包圍旋轉卡盤61的位置,具備有:捕捉構件90(第2捕捉部),在沿上下方向延伸之排氣流路80的上部,以覆蓋排氣流路80的方式而配置,且捕捉絲狀物。捕捉構件90,係以堵塞排氣流路80的方式而設置。捕捉構件90,係被構成為具有使流動於排氣流路80的排氣通過之開口部90d(第2開口)(參閱圖10),可從開口部90d進行排氣,並且捕捉到達了排氣流路80側的絲狀物。As shown in FIG. 9, the liquid processing unit U1C according to the fourth embodiment is provided with a capture member 90 (second capture) at a position surrounding the spin chuck 61 from the outside in addition to the configuration described in the first embodiment. Section) is disposed on the upper part of the exhaust flow path 80 extending in the up-down direction so as to cover the exhaust flow path 80 and capture the filaments. The capture member 90 is provided so as to block the exhaust flow path 80. The catching member 90 is configured to have an opening 90d (second opening) (see FIG. 10) through which the exhaust gas flowing through the exhaust flow path 80 passes, and exhaust can be performed from the opening 90d, and the catching reaches the exhaust Filaments on the air flow path 80 side.
如圖10所示,捕捉構件90,係例如具有:不鏽鋼等的金屬製之內側環90a;外側環90b,較內側環90a更為大徑;及複數個例如三角形狀的連結構件90c,連接內側環90a及外側環90b之間。在捕捉構件90中,除了內側環90a及外側環90b之間的區域當中設置有三角形狀之連結構件90c的區域以外,係被設成為開口部90d。藉此,在捕捉構件90之上方與下方,可經由開口部90d連通,並可將處理室內部之氛圍排氣至排氣流路80。捕捉構件90,係藉由開口部90d,使排氣及排氣中之液體通過捕捉構件90的下方,並且藉由連結構件90c捕捉絲狀物。As shown in FIG. 10, the capture member 90 includes, for example, a metal inner ring 90a made of stainless steel or the like; an outer ring 90b having a larger diameter than the inner ring 90a; and a plurality of triangular-shaped connecting members 90c connected to the inner side Between the ring 90a and the outer ring 90b. The capture member 90 is provided as an opening portion 90d except for a region where a triangular-shaped connecting member 90c is provided in a region between the inner ring 90a and the outer ring 90b. Thereby, the upper and lower sides of the capturing member 90 can communicate with each other through the opening portion 90d, and the atmosphere inside the processing chamber can be exhausted to the exhaust flow path 80. The capturing member 90 passes the opening 90d to allow the exhaust gas and the liquid in the exhaust gas to pass under the capturing member 90, and captures the filaments by the connecting member 90c.
如上述般,絲狀物,係因塗佈液從旋轉之晶圓W的周緣部被甩離而產生。因此,絲狀物,係容易產生於晶圓W之周緣部側亦即旋轉卡盤61的外側。亦即,在從外側包圍旋轉卡盤61之位置,沿上下方向延伸的排氣流路80,係容易堵塞有絲狀物。該點,以覆蓋排氣流路80的方式設置捕捉構件90,藉此,可抑制絲狀物堵塞於排氣流路80。又,在捕捉構件90,係形成有使排氣通過的開口部90d。藉此,可捕捉絲狀物,並且適當地進行排氣流路80中之排氣。As described above, the filaments are generated when the coating liquid is thrown away from the peripheral edge portion of the rotating wafer W. Therefore, the filaments are easily generated on the peripheral portion side of the wafer W, that is, on the outside of the spin chuck 61. That is, at the position surrounding the spin chuck 61 from the outside, the exhaust flow path 80 extending in the up-down direction is likely to be clogged with filaments. At this point, the catching member 90 is provided so as to cover the exhaust flow path 80, and thereby it is possible to prevent the filaments from clogging the exhaust flow path 80. Moreover, the capture member 90 is formed with an opening portion 90d through which exhaust gas passes. Thereby, the filaments can be captured, and the exhaust in the exhaust flow path 80 can be performed appropriately.
以上,雖說明了關於本發明之第1~第4實施形態,但本發明並不限於上述實施形態者,亦可在不改變記載於各申請專利範圍之要旨的範圍下進行變形或應用於其他者。Although the first to fourth embodiments of the present invention have been described above, the present invention is not limited to those described above, and may be modified or applied without changing the scope of the gist of each patent application. By.
例如,雖說明了將本揭示之構成使用於處理模組15之液處理單元U1的例子,但並不限於此,本揭示之構成,係可使用於「因將高黏度的處理液供給至旋轉之基板而產生絲狀物」的各種裝置。For example, although the example in which the configuration of the present disclosure is applied to the liquid processing unit U1 of the processing module 15 has been described, it is not limited to this. Various devices that produce filaments ".
2‧‧‧塗佈・顯像裝置(基板處理裝置)2‧‧‧ Coating and developing device (substrate processing device)
30、40、50‧‧‧捕捉板(第1捕捉部)30, 40, 50‧‧‧ capture boards (the first capture section)
30b、40b‧‧‧通過口30b, 40b ‧‧‧ through mouth
61‧‧‧旋轉卡盤(保持部)61‧‧‧ Spin chuck (holding part)
62‧‧‧塗佈液供給噴嘴(處理液供給部)62‧‧‧ Coating liquid supply nozzle (processing liquid supply unit)
64‧‧‧旋轉驅動部64‧‧‧Rotary drive unit
65‧‧‧杯基座(回收部)65‧‧‧ cup base (recycling department)
70‧‧‧排出部70‧‧‧Exhaust
77‧‧‧背面沖洗液供給噴嘴(背面沖洗液供給部)77‧‧‧Backside rinse liquid supply nozzle (backside rinse liquid supply unit)
80‧‧‧排氣流路80‧‧‧Exhaust flow path
90‧‧‧捕捉構件(第2捕捉部)90‧‧‧ capture member (second capture section)
90d‧‧‧開口部90d‧‧‧ opening
W‧‧‧晶圓(基板)W‧‧‧ Wafer (substrate)
W2‧‧‧背面W2‧‧‧ back
[圖1]表示第1實施形態之基板處理系統之概略構成的立體圖。 [圖2]沿著圖1中之II-II線的剖面圖。 [圖3]沿著圖2中之III-III線的剖面圖。 [圖4]第1實施形態之液處理單元的示意圖。 [圖5]第1實施形態之捕捉構件的示意圖。 [圖6]第2實施形態之液處理單元的示意圖。 [圖7]第2實施形態之捕捉構件的示意圖。 [圖8]第3實施形態之液處理單元的示意圖。 [圖9]第4實施形態之液處理單元的示意圖。 [圖10]第4實施形態之捕捉構件的示意圖。[FIG. 1] A perspective view showing a schematic configuration of a substrate processing system according to a first embodiment.图 [Fig. 2] A sectional view taken along the line II-II in Fig. 1. [Fig. 3] A sectional view taken along the line III-III in Fig. 2. [Fig. 4] A schematic view of a liquid processing unit according to the first embodiment. [Fig. 5] A schematic view of a capture member according to the first embodiment. [Fig. 6] A schematic view of a liquid processing unit according to a second embodiment. [Fig. 7] A schematic view of a capture member according to a second embodiment. [Fig. 8] A schematic view of a liquid processing unit according to a third embodiment. [Fig. 9] A schematic view of a liquid processing unit according to a fourth embodiment. [Fig. 10] A schematic view of a capture member according to a fourth embodiment.
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JPH01140628A (en) * | 1987-11-26 | 1989-06-01 | Nec Corp | Resist coating equipment |
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