TW201901744A - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 409
- 238000012545 processing Methods 0.000 title claims abstract description 171
- 238000003672 processing method Methods 0.000 title claims description 9
- 230000002093 peripheral effect Effects 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims description 97
- 230000001681 protective effect Effects 0.000 claims description 53
- 230000000694 effects Effects 0.000 abstract description 15
- 239000012530 fluid Substances 0.000 abstract description 12
- 230000001629 suppression Effects 0.000 abstract description 9
- 239000007789 gas Substances 0.000 description 338
- 230000002265 prevention Effects 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 14
- 230000003028 elevating effect Effects 0.000 description 11
- 239000011261 inert gas Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000003595 mist Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 2
- 229960001231 choline Drugs 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明係關於對半導體基板、液晶顯示用玻璃基板、光罩用玻璃基板、光碟用基板等之基板進行處理之基板處理裝置及基板處理方法。 The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate such as a semiconductor substrate, a glass substrate for a liquid crystal display, a glass substrate for a photomask, and a substrate for an optical disc.
習知之基板處理裝置具備有旋轉夾頭、旋轉機構、處理液噴嘴、及洗淨刷。旋轉夾頭具備有可旋轉之旋轉基座、及呈環狀地被立設於旋轉基座之外周側之複數個支撐構件。旋轉夾頭藉由複數個支撐構件而離開旋轉基座地將基板加以保持。旋轉機構使旋轉夾頭旋轉。處理液自處理液噴嘴被供給至由旋轉夾頭所保持而進行旋轉之基板之上表面。此時，使洗淨刷接觸於基板之上表面而對基板進行刷洗洗淨。 A conventional substrate processing apparatus includes a rotary chuck, a rotary mechanism, a processing liquid nozzle, and a cleaning brush. The rotary chuck includes a rotatable rotary base, and a plurality of support members that are erected on the outer peripheral side of the rotary base in a ring shape. The rotary chuck holds the substrate away from the rotary base by a plurality of support members. The rotating mechanism rotates the rotary chuck. The processing liquid is supplied from the processing liquid nozzle to the upper surface of the substrate held and rotated by the spin chuck. At this time, the substrate is brought into contact with the upper surface of the substrate, and the substrate is washed and washed.
又，亦存在有取代處理液噴嘴及洗淨刷而使用雙流體噴嘴，對基板之上表面噴灑處理液，從而對基板之上表面進行洗淨之情形。 In addition, there are cases where a two-fluid nozzle is used instead of the processing liquid nozzle and the cleaning brush to spray the processing liquid on the upper surface of the substrate, thereby cleaning the upper surface of the substrate.
於進行對基板之上表面供給處理液來進行刷洗洗淨等之基板處理之情形時，會產生處理液之霧氣。若處理液霧氣繞入基板之下表面，處理液便會附著於基板之下表面。因此，基板處理裝置具備有保護盤及氣體吐出部。保護盤係設置於由旋轉夾頭所保持之基板與旋轉基座之間，且可進行升降。又，保護盤於進行基板 處理時被配置於靠近基板之位置。於該狀態時，被設置於基板中心之下方之氣體吐出部，對由旋轉夾頭所保持之基板與保護盤之間吐出惰性氣體。藉此，抑制處理液朝向基板之下表面之繞入(例如參照專利文獻1)。 When the substrate processing is performed by supplying a processing liquid to the upper surface of the substrate to perform scrubbing and cleaning, a mist of the processing liquid is generated. If the mist of the processing liquid enters the lower surface of the substrate, the processing liquid will adhere to the lower surface of the substrate. Therefore, the substrate processing apparatus includes a protective disk and a gas discharge unit. The protection disc is arranged between the substrate held by the rotation chuck and the rotation base, and can be raised and lowered. In addition, the protection disk is disposed near the substrate during substrate processing. In this state, a gas discharge portion provided below the center of the substrate discharges an inert gas between the substrate held by the rotary chuck and the protective disk. This prevents the processing liquid from being drawn toward the lower surface of the substrate (for example, refer to Patent Document 1).
[專利文獻1]日本專利特開2015-002328號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2015-002328
然而，即便自被設置在基板中心之下方之氣體吐出部對基板與保護盤之間吐出惰性氣體，仍存在有無法充分地抑制處理液朝向基板之下表面繞入之問題。例如，於利用洗淨刷進行刷洗洗淨之情形時，會於支撐構件附近產生洗淨液霧氣朝向基板之下表面之繞入。其原因可能在於支撐構件會妨礙自氣體吐出部所吐出之惰性氣體朝向基板外周側之流動、或支撐構件與基板一起旋轉而產生負壓，而使繞入之抑制效果降低。若處理液之霧氣繞入基板之下表面而使處理液附著於基板之下表面(元件面)，便會成為產生微粒之原因。再者，微粒之產生會造成良率降低，因而不佳。 However, even if an inert gas is discharged between the substrate and the protective disk from a gas discharge portion provided below the center of the substrate, there is still a problem that the processing liquid cannot be sufficiently prevented from being drawn toward the lower surface of the substrate. For example, in the case of scrubbing and cleaning with a cleaning brush, a mist of the cleaning liquid is generated near the support member and is directed toward the lower surface of the substrate. This may be because the support member prevents the inert gas discharged from the gas discharge portion from flowing toward the outer peripheral side of the substrate, or the support member rotates together with the substrate to generate a negative pressure, thereby reducing the effect of suppressing the winding. If the mist of the processing liquid passes around the lower surface of the substrate and the processing liquid adheres to the lower surface (element surface) of the substrate, it will become a cause of generating particles. Furthermore, the generation of particles causes a reduction in yield and is not good.
圖13係顯示在支撐構件附近產生之微粒之狀況的圖。圖13係自上表面側觀察基板W之圖，斑點顯示於基板W之下表面所產生之微粒。微粒自支撐構件產生於基板W之內側。 FIG. 13 is a diagram showing the state of particles generated in the vicinity of the support member. FIG. 13 is a diagram of the substrate W viewed from the upper surface side, and the spots show particles generated on the lower surface of the substrate W. FIG. The particle self-supporting member is generated inside the substrate W.
本發明係鑒於如此之實情所完成者，其目的在於提供可改善處理液朝向基板之下表面繞入之抑制效果之基板處理裝置 及基板處理方法。 The present invention has been made in view of such facts, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of improving the suppression effect of the processing liquid from being drawn toward the lower surface of the substrate.
本發明為了達成如此之目的，採取如下之構成。亦即，本發明之基板處理裝置具備有：基板保持部，其係具有可繞鉛直方向之軸線旋轉之旋轉基座、及在上述旋轉基座之外周側且繞上述軸線被立設之複數個支撐構件者，且藉由上述複數個支撐構件，在將上述旋轉基座與基板分離之狀態下保持基板；旋轉驅動機構，其使上述基板保持部繞上述軸線旋轉；處理部，其對由上述基板保持部所保持而進行旋轉之基板之上表面供給處理液從而進行基板處理；第1氣體吐出部，其係設置於由上述基板保持部所保持之基板之中心之下方，而以氣流自基板之中心側朝向基板之外周側流動之方式對基板之下表面吐出氣體；以及第2氣體吐出部，於以俯視觀察由上述基板保持部所保持之基板時，被設置在較繞上述軸線所立設之上述複數個支撐構件更靠上述軸線側且基板之外周側，除了上述第1氣體吐出部之氣體之吐出以外，上述複數個支撐構件之各者與上述基板之邊端之接觸部分附近吐出上述氣體。 In order to achieve such an object, the present invention has the following configuration. That is, the substrate processing apparatus of the present invention includes a substrate holding portion having a rotation base rotatable around an axis in the vertical direction, and a plurality of erected on the outer peripheral side of the rotation base and around the axis. The support member holds the substrate in a state where the rotary base is separated from the substrate by the plurality of support members; the rotation driving mechanism rotates the substrate holding portion about the axis; the processing portion The upper surface of the substrate held and rotated by the substrate holding portion is supplied with a processing liquid to perform substrate processing. The first gas discharge portion is provided below the center of the substrate held by the substrate holding portion, and flows from the substrate by air current. The central side of the substrate flows toward the outer peripheral side of the substrate, and a second gas discharge portion is provided to stand relatively around the axis when the substrate held by the substrate holding portion is viewed from above. It is assumed that the plurality of support members are closer to the axis side and the outer peripheral side of the substrate, except for the gas discharge from the first gas discharge portion. Each of the complex by the support members in contact with the vicinity of the side end portion of the substrate of the gas discharge.
根據本發明之基板處理裝置，第2氣體吐出部於以俯視觀察由基板保持部所保持之基板時，被設置在較繞軸線所立設之複數個支撐構件更靠軸線側且基板之外周側。除了第1氣體吐出部之氣體之吐出以外，第2氣體吐出部對複數個支撐構件之各者與基板之邊端之接觸部分附近吐出氣體。亦即，第2氣體吐出部自支撐構件附近對繞入之抑制效果會降低而處理液可能會繞入基板之下表面之支撐構件與基板之邊端之接觸部分附近吐出氣體。因此，可準確地強化第1氣體吐出部所吐出之氣體之流動，藉此改善處理液 朝向基板之下表面繞入之抑制效果。 According to the substrate processing apparatus of the present invention, when the second gas ejection portion is viewed in a plan view of the substrate held by the substrate holding portion, the second gas discharge portion is disposed closer to the axis side and to the outer peripheral side of the substrate than the plurality of support members standing around the axis. . Except for the discharge of the gas from the first gas discharge portion, the second gas discharge portion discharges the gas from the vicinity of the contact portion between each of the plurality of support members and the edge of the substrate. That is, the suppression effect of the second gas discharge portion from the vicinity of the self-supporting member is reduced, and the processing liquid may be drawn into the vicinity of the contact portion between the support member on the lower surface of the substrate and the edge of the substrate to discharge the gas. Therefore, it is possible to accurately strengthen the flow of the gas discharged from the first gas discharge portion, thereby improving the effect of suppressing the treatment liquid from entering the lower surface of the substrate.
又，於上述之基板處理裝置中，較佳為上述第2氣體吐出部呈繞上述軸線之環狀，且具有被形成為沿著該環之外周呈長形之至少1個狹縫狀之吐出口。 In the above-mentioned substrate processing apparatus, it is preferable that the second gas discharge portion has a loop shape around the axis and has at least one slit-shaped discharge shape that is elongated along an outer periphery of the ring. Export.
例如，於利用雙流體噴嘴所進行之洗淨中，處理液繞入基板下表面之外周側之全周使處理液附著於基板下表面。藉此，於基板下表面之外周側之全周產生環狀之微粒。其原因可能不同於上述之支撐構件之影響而在於相較於利用刷子所進行之刷洗洗淨，處理液霧氣之量較多所導致。若根據本發明之狹縫狀吐出口，可對包含支撐構件與基板之邊端之接觸部分之基板之邊端附近廣範圍地吐出氣體。因此，可改善處理液朝基板下表面外周側之全周之繞入抑制效果。 For example, in a cleaning process using a two-fluid nozzle, the processing liquid is wound around the entire periphery of the outer peripheral side of the lower surface of the substrate, so that the processing liquid adheres to the lower surface of the substrate. Thereby, ring-shaped fine particles are generated on the entire periphery of the outer peripheral side of the lower surface of the substrate. The reason may be different from the influence of the above-mentioned support member and is caused by a larger amount of mist of the treatment liquid compared with the brush washing and washing performed by the brush. According to the slit-shaped discharge port of the present invention, a wide range of gas can be discharged near the edge end of the substrate including the contact portion between the support member and the edge end of the substrate. Therefore, it is possible to improve the effect of suppressing the entrapment of the processing liquid toward the outer periphery of the lower surface of the substrate.
又，於上述之基板處理裝置中，較佳為上述第2氣體吐出部呈繞上述軸線之環狀，且具有被形成為沿著該環之外周呈長形且遍及上述環之全周之1個狹縫狀吐出口。藉此，第2氣體吐出部可對包含支撐構件與基板之邊端之接觸部分之基板之邊端附近之全周吐出氣體。 In the above-mentioned substrate processing apparatus, it is preferable that the second gas discharge portion has a ring shape around the axis, and has a shape that is elongated along an outer periphery of the ring and extends throughout the entire circumference of the ring. Slot-shaped spout. Thereby, the second gas discharge portion can discharge gas over the entire periphery of the vicinity of the edge end of the substrate including the contact portion between the support member and the edge end of the substrate.
又，於上述之基板處理裝置中，較佳為上述狹縫狀之吐出口係構成為分別與上述複數個支撐構件對向之部分之狹縫寬度，較上述對向部分以外之部分之狹縫寬度更寬。藉此，狹縫狀之吐出口可在分別與複數個支撐構件對向之部分，吐出較對向部分以外之部分更多之氣體。 Further, in the above-mentioned substrate processing apparatus, it is preferable that the slit-shaped ejection outlet is configured such that a slit width of a portion facing each of the plurality of supporting members is larger than a slit of a portion other than the facing portion. Wider. Thereby, the slit-shaped ejection outlet can eject more gas in the portions opposed to the plurality of support members than in the portions other than the opposed portions.
又，於上述之基板處理裝置中，較佳為上述第2氣體吐出部具有繞上述軸線呈環狀之複數個吐出口，上述複數個吐出口 係構成為藉由上述旋轉驅動機構而與上述複數個支撐構件被一起地繞上述軸線旋轉。藉此，可維持複數個支撐構件與複數個吐出口之相對位置。 In the above-mentioned substrate processing apparatus, it is preferable that the second gas ejection section has a plurality of ejection ports that are annular in shape around the axis, and the plurality of ejection ports are configured to be connected to the plurality of numbers by the rotation driving mechanism. The support members are rotated together about the above axis. Thereby, the relative positions of the plurality of support members and the plurality of discharge ports can be maintained.
又，上述之基板處理裝置進一步具備有：板狀保護構件，其係設置為可於上述旋轉基座與基板之間進行升降；及升降機構，其於進行基板處理之情形時使上述板狀保護構件上升；上述第1氣體吐出部係以氣體自基板之中心側朝向基板之外周側而流動於基板與上述板狀保護構件之間之方式對基板之下表面吐出氣體，上述第2氣體吐出部係設置於上述板狀保護構件，且氣體通過被設在上述板狀保護構件之內部之空間而被供給至上述第2氣體吐出部。 The above-mentioned substrate processing apparatus further includes: a plate-shaped protective member provided to be capable of being raised and lowered between the rotary base and the substrate; and a lifting mechanism for protecting the plate-like protection when the substrate is processed. The component rises; the first gas discharge portion discharges gas to the lower surface of the substrate such that the gas flows from the center side of the substrate toward the outer peripheral side of the substrate and flows between the substrate and the plate-shaped protective member, and the second gas discharge portion It is provided in the plate-shaped protective member, and a gas is supplied to the second gas discharge portion through a space provided inside the plate-shaped protective member.
藉此，可通過被設在板狀保護構件之內部之空間，對被設在可進行升降之板狀保護構件之第2氣體吐出部吐出氣體。 Thereby, the space provided inside the plate-shaped protective member can discharge gas to the second gas discharge portion provided in the plate-shaped protective member that can be raised and lowered.
又，於上述之基板處理裝置中，較佳為上述板狀保護構件具備有：保護板，其係設置為可於上述旋轉基座與基板之間進行升降；及氣體導引板，其係設置為可於上述保護板與上述旋轉基座之間進行升降；上述第1氣體吐出部係以氣體自基板之中心側朝向基板之外周側而流動於基板與上述保護板之間之方式對基板之下表面吐出氣體，上述第2氣體吐出部具有由上述保護板與上述氣體導引板之間隙所形成之至少1個吐出口，且氣體通過在上述保護板與上述氣體導引板之間所形成之空間而被供給至上述第2氣體吐出部，上述升降機構於進行基板處理之情形時使上述保護板及氣體導引板上升。 In the above-mentioned substrate processing apparatus, it is preferable that the plate-shaped protective member is provided with: a protective plate provided to be capable of being raised and lowered between the rotary base and the substrate; and a gas guide plate provided to In order to be able to move up and down between the protective plate and the rotating base, the first gas discharge portion is configured to align the substrate with the gas flowing from the center side of the substrate toward the outer peripheral side of the substrate and between the substrate and the protective plate. Gas is discharged from the lower surface. The second gas discharge portion has at least one discharge port formed by a gap between the protective plate and the gas guide plate, and the gas is formed between the protective plate and the gas guide plate. The space is supplied to the second gas ejection unit, and the lifting mechanism raises the protective plate and the gas guide plate when the substrate is processed.
藉此，可通過在保護板與氣體導引板之間所形成之空間，對具有由可進行升降之保護板與氣體導引板之間隙所形成之吐 出口之第2氣體吐出部吐出氣體。 Thereby, the space formed between the protective plate and the gas guide plate can be used to discharge gas to the second gas discharge portion having the discharge port formed by the gap between the protective plate and the gas guide plate that can be raised and lowered.
又，於上述之基板處理裝置中，較佳為上述氣體導引板可相對於上述保護板獨立地進行升降，上述升降機構於進行基板處理之情形時個別地使上述保護板及氣體導引板上升，並且對形成上述吐出口之上述間隙之寬度進行調整。升降機構藉由對形成吐出口之間隙之寬度進行調整，例如可調整第2氣體吐出部所吐出之氣體之流速。 In the substrate processing apparatus described above, it is preferable that the gas guide plate can be lifted and lowered independently of the protection plate, and the lifting mechanism individually makes the protection plate and the gas guide plate when the substrate is processed. Raise and adjust the width of the gap forming the discharge port. The lifting mechanism adjusts the width of the gap forming the discharge port, for example, the flow velocity of the gas discharged from the second gas discharge unit can be adjusted.
又，於上述之基板處理裝置中，較佳為上述第2氣體吐出部係設在上述旋轉基座，且氣體通過被設在上述旋轉基座之內部之空間而被供給至上述第2氣體吐出部。藉此，可通過被設在旋轉基座之內部之空間，對被設在旋轉基座之第2氣體吐出部吐出氣體。 In the above-mentioned substrate processing apparatus, it is preferable that the second gas discharge unit is provided on the rotary base, and the gas is supplied to the second gas discharge through a space provided inside the rotary base. unit. Thereby, it is possible to discharge the gas to the second gas discharge portion provided on the rotating base through the space provided inside the rotating base.
又，本發明之基板處理裝置之特徵在於，其具備有：基板保持部，其係具有可繞鉛直方向之軸線旋轉之旋轉基座、及在上述旋轉基座之外周側且繞上述軸線被立設之複數個支撐構件者，且藉由上述複數個支撐構件，在將上述旋轉基座與基板分離之狀態下保持基板；旋轉驅動機構，其使上述基板保持部繞上述軸線旋轉；處理部，其對由上述基板保持部所保持而進行旋轉之基板之上表面供給處理液從而進行基板處理；以及氣體吐出部，其呈繞上述軸線之環狀，具有沿著該環之外周被形成為呈長形之至少1個狹縫狀之吐出口，且於以俯視觀察由上述基板保持部所保持之基板時，被設置在較繞上述軸線所立設之上述複數個支撐構件更靠上述軸線側且基板之外周側，而對包含上述複數個支撐構件之各者與上述基板之邊端之接觸部分附近之上述基板之邊端附近之全周吐出 上述氣體。 In addition, the substrate processing apparatus of the present invention includes a substrate holding portion having a rotary base rotatable about an axis in the vertical direction, and a substrate that is erected around the axis on the outer peripheral side of the rotary base. A plurality of support members are provided, and the substrate is held in a state where the rotary base is separated from the substrate by the plurality of support members; a rotation driving mechanism that rotates the substrate holding portion about the axis; It supplies a processing liquid to the upper surface of the substrate held and rotated by the substrate holding portion to perform substrate processing; and a gas discharge portion having a ring shape around the axis and having a shape along the outer periphery of the ring. At least one slit-shaped ejection port, and when viewed from above, the substrate held by the substrate holding portion is disposed closer to the axis than the plurality of support members standing around the axis. And the outer peripheral side of the substrate, and the vicinity of the edge end of the substrate near the contact portion including each of the plurality of support members and the edge end of the substrate The above-mentioned gas is exhaled throughout the week.
根據本發明之基板處理裝置，氣體吐出部呈繞軸線之環狀，且具有沿著該環之外周被形成為呈長形之至少1個狹縫狀之吐出口。又，氣體吐出部於以俯視觀察由基板保持部所保持之基板時，被設置在較繞軸線所立設之複數個支撐構件更靠軸線側且基板之外周側。氣體吐出部可對包含複數個支撐構件之各者與基板之邊端之接觸部分附近之基板之邊端附近廣範圍地吐出氣體。再者，複數個支撐構件之各者與基板之邊端之接觸部分附近，係處理液可能較容易繞入基板下表面之部分。亦即，氣體吐出部準確地自支撐構件附近對基板之邊端附近吐出氣體。因此，可改善處理液朝向基板下表面之外周側之全周繞入之抑制效果。 According to the substrate processing apparatus of the present invention, the gas discharge portion has a ring shape around the axis and has at least one slit-shaped discharge port formed along the outer periphery of the ring. In addition, when the substrate held by the substrate holding portion is viewed from above in a gas discharge portion, the gas discharge portion is provided closer to the axis side and to the outer peripheral side of the substrate than the plurality of support members standing around the axis. The gas discharge portion can discharge a wide range of gas near the edge end of the substrate near the portion where each of the plurality of supporting members is in contact with the edge end of the substrate. Furthermore, in the vicinity of the contact portion between each of the plurality of supporting members and the edge of the substrate, the processing liquid may easily enter the portion of the lower surface of the substrate. That is, the gas discharge portion accurately discharges gas from the vicinity of the support member to the vicinity of the edge end of the substrate. Therefore, it is possible to improve the effect of suppressing the whole-around winding of the processing liquid toward the outer peripheral side of the lower surface of the substrate.
又，本發明之基板處理方法係利用基板處理裝置所進行者，該基板處理裝置具備有：基板保持部，其係具有可繞鉛直方向之軸線旋轉之旋轉基座、及在上述旋轉基座之外周側且繞上述軸線被立設之複數個支撐構件者，且藉由上述複數個支撐構件，在將上述旋轉基座與基板分離之狀態下保持基板；旋轉驅動機構，其使上述基板保持部繞上述軸線旋轉；以及處理部，其對由上述基板保持部所保持而進行旋轉之基板之上表面供給處理液從而進行基板處理；如此之基板處理方法之特徵在於，其具備有：第1氣體吐出步驟，其藉由被設置於由上述基板保持部所保持之基板之中心之下方之第1氣體吐出部，而以氣流自基板之中心側朝向基板之外周側流動之方式對基板之下表面吐出氣體；及第2氣體吐出步驟，其藉由於以俯視觀察由上述基板保持部所保持之基板時，被設置在較上述複數個支撐構件更靠上述軸線側且基板之外周側之第2氣體吐出 部，除了上述第1氣體吐出部之氣體之吐出以外，對上述複數個支撐構件之各者與上述基板之邊端之接觸部分附近吐出氣體。 The substrate processing method of the present invention is performed by a substrate processing apparatus including a substrate holding unit having a rotary base rotatable about an axis in a vertical direction, and a rotary base on the rotary base. A plurality of support members that are erected around the axis on the outer peripheral side and hold the substrate in a state where the rotary base is separated from the substrate by the plurality of support members; a rotation drive mechanism that causes the substrate holding portion And a processing unit for processing the substrate by supplying a processing liquid to the upper surface of the substrate held and rotated by the substrate holding unit, and processing the substrate; such a substrate processing method is characterized by comprising: a first gas; In the ejecting step, the first surface of the substrate is held below the center of the substrate held by the substrate holding portion, and the lower surface of the substrate is caused to flow from the center side of the substrate toward the outer peripheral side of the substrate. Gas is discharged; and the second gas discharge step is performed when the substrate held by the substrate holding portion is viewed from above, The second gas discharge portion provided on the axis side and on the outer peripheral side of the substrate than the plurality of support members is provided with respect to each of the plurality of support members and the substrate except for the gas discharge from the first gas discharge portion. Gas is discharged near the contact portion of the edge.
根據本發明之基板處理方法，第2氣體吐出部於以俯視觀察由基板保持部所保持之基板時，被設置在較繞軸線所立設之複數個支撐構件更靠軸線側且基板之外周側。除了由第1氣體吐出部吐出氣體以外，第2氣體吐出部對複數個支撐構件之各者與基板之邊端之接觸部分附近吐出氣體。亦即，第2氣體吐出部自支撐構件附近對繞入之抑制效果會降低而處理液可能會繞入基板之下表面之支撐構件與基板之邊端之接觸部分附近吐出氣體。因此，可準確地強化第1氣體吐出部所吐出之氣體之流動，藉此改善處理液朝向基板之下表面繞入之抑制效果。 According to the substrate processing method of the present invention, when the second gas discharge portion is viewed in a plan view of the substrate held by the substrate holding portion, the second gas ejection portion is disposed closer to the axis side and to the outer peripheral side of the substrate than the plurality of support members standing around the axis. . Except for the gas discharged from the first gas discharge portion, the second gas discharge portion discharges gas from the vicinity of the contact portion between each of the plurality of support members and the edge of the substrate. That is, the suppression effect of the second gas discharge portion from the vicinity of the self-supporting member is reduced, and the processing liquid may be drawn into the vicinity of the contact portion between the support member on the lower surface of the substrate and the edge of the substrate to discharge the gas. Therefore, it is possible to accurately strengthen the flow of the gas discharged from the first gas discharge portion, thereby improving the suppression effect of the treatment liquid being drawn toward the lower surface of the substrate.
根據本發明之基板處理裝置及基板處理方法，第2氣體吐出部或氣體吐出部自支撐構件附近對繞入之抑制效果會降低而處理液可能會繞入基板之下表面之支撐構件與基板之邊端之接觸部分附近吐出氣體。因此，可改善處理液朝向基板之下表面繞入之抑制效果。 According to the substrate processing apparatus and the substrate processing method of the present invention, the suppression effect of the second gas discharge portion or the gas discharge portion from the vicinity of the support member is reduced, and the processing liquid may be wound into the support member and the substrate of the lower surface of the substrate. Gas comes out near the contact part of the edge. Therefore, it is possible to improve the effect of suppressing the treatment liquid from being drawn toward the lower surface of the substrate.
1‧‧‧基板處理裝置 1‧‧‧ substrate processing device
2‧‧‧旋轉夾頭 2‧‧‧ Rotating Chuck
3‧‧‧旋轉驅動機構 3‧‧‧Rotary drive mechanism
5‧‧‧飛散防止杯 5‧‧‧Scatter prevention cup
7‧‧‧處理機構 7‧‧‧ processing agency
9‧‧‧處理液供給機構 9‧‧‧ treatment liquid supply mechanism
11、153‧‧‧旋轉基座 11, 153‧‧‧ rotating base
13‧‧‧支撐銷 13‧‧‧ support pin
15‧‧‧支柱 15‧‧‧ pillar
17‧‧‧旋轉軸 17‧‧‧rotation axis
19‧‧‧軀幹部 19‧‧‧ torso
21‧‧‧傾斜部 21‧‧‧inclined
23‧‧‧抵接部 23‧‧‧ abutment department
25‧‧‧可動支撐銷 25‧‧‧ movable support pin
26、26A、26B‧‧‧固定支撐銷 26, 26A, 26B‧‧‧Fixed support pins
27‧‧‧旋轉軸 27‧‧‧rotation axis
29‧‧‧磁鐵保持部 29‧‧‧ Magnet holding section
31‧‧‧銷驅動用永久磁鐵 31‧‧‧pin drive permanent magnet
33、122‧‧‧保護盤 33, 122‧‧‧Protection disk
35‧‧‧中央開口部 35‧‧‧ central opening
37‧‧‧周邊缺口部 37‧‧‧peripheral notch
39、57、131、133‧‧‧開口部 39, 57, 131, 133‧‧‧ openings
41‧‧‧磁鐵保持下垂片 41‧‧‧Magnet keeps the sagging piece
43‧‧‧盤用永久磁鐵 43‧‧‧Disc permanent magnet
45‧‧‧移動導引部 45‧‧‧ Mobile guide
47‧‧‧線性軸承 47‧‧‧ linear bearings
49‧‧‧限制銷 49‧‧‧ restricted pin
51‧‧‧氣體供給內側管 51‧‧‧Gas supply inner tube
53‧‧‧氣體供給外側管 53‧‧‧Gas supply outer tube
55‧‧‧前端保持部 55‧‧‧Front end holding section
59‧‧‧軸承部 59‧‧‧bearing department
61‧‧‧密封 61‧‧‧sealed
63、64‧‧‧保持筒 63, 64‧‧‧ Holder
65‧‧‧第1氣體吐出部 65‧‧‧The first gas outlet
66‧‧‧上部吐出構件 66‧‧‧ Upper ejection member
67‧‧‧下部吐出構件 67‧‧‧ Lower ejection member
67A‧‧‧上限制部 67A‧‧‧ Upper Restricted Section
68‧‧‧腳部 68‧‧‧foot
69‧‧‧凹部 69‧‧‧ recess
71‧‧‧孔部 71‧‧‧ Hole
73‧‧‧第1吐出口 73‧‧‧The first exit
75‧‧‧第1氣體流路 75‧‧‧The first gas flow path
77A‧‧‧第1氣體供給源 77A‧‧‧The first gas supply source
77B‧‧‧第1氣體供給配管 77B‧‧‧The first gas supply piping
77C、92C、111C‧‧‧開閉閥 77C, 92C, 111C‧‧‧ On-off valve
79、141、155‧‧‧第2氣體流路 79, 141, 155‧‧‧ 2nd gas flow path
81、120、150‧‧‧第2氣體吐出部 81, 120, 150‧‧‧ 2nd gas outlet
83、126、151、160、162、164‧‧‧第2吐出口 83, 126, 151, 160, 162, 164‧‧‧ 2nd exit
83A、162A‧‧‧與支撐銷對向之部分 83A, 162A‧‧‧Parts facing the support pins
83B、162B‧‧‧對向之部分以外之部分 83B, 162B‧Parts other than those facing
85‧‧‧導引部 85‧‧‧Guide
87、143‧‧‧連通口 87, 143‧‧‧port
89‧‧‧導引溝 89‧‧‧Guide groove
92A‧‧‧第2氣體供給源 92A‧‧‧Second gas supply source
92B‧‧‧第2氣體供給配管 92B‧‧‧Second gas supply piping
93‧‧‧圓筒部 93‧‧‧Cylinder
95‧‧‧下導引部 95‧‧‧ lower guide
97‧‧‧上導引部 97‧‧‧ Upper Guide
98‧‧‧上緣部 98‧‧‧ Upper margin
101‧‧‧排液部 101‧‧‧Draining Department
103‧‧‧杯側永久磁鐵 103‧‧‧Cup side permanent magnet
105‧‧‧解除用永久磁鐵 105‧‧‧Releasing permanent magnet
107‧‧‧刷子 107‧‧‧ Brush
109‧‧‧擺動臂 109‧‧‧Swing arm
111A‧‧‧處理液供給源 111A‧‧‧ Treatment liquid supply source
111B‧‧‧處理液配管 111B‧‧‧Processing liquid piping
111D‧‧‧處理液噴嘴 111D‧‧‧treatment liquid nozzle
113‧‧‧控制部 113‧‧‧Control Department
124‧‧‧氣體導引板 124‧‧‧Gas guide plate
124A‧‧‧周緣部 124A‧‧‧periphery
128‧‧‧第2磁鐵保持下垂片 128‧‧‧ The second magnet keeps the pendant
129‧‧‧導引板用永久磁鐵 129‧‧‧Permanent magnet for guide plate
135‧‧‧升降構件 135‧‧‧Lifting member
136‧‧‧升降用永久磁鐵 136‧‧‧Permanent magnet for lifting
166‧‧‧導引構件 166‧‧‧Guide members
AM‧‧‧臂驅動機構 AM‧‧‧arm drive mechanism
BS‧‧‧底面 BS‧‧‧Underside
CM‧‧‧杯升降機構 CM‧‧‧ Cup Lifting Mechanism
CR‧‧‧環 CR‧‧‧Ring
EG‧‧‧邊端 EG‧‧‧Edge
GM‧‧‧導引板升降機構 GM‧‧‧Guide plate lifting mechanism
GP‧‧‧間隙 GP‧‧‧ Clearance
GS‧‧‧側面 GS‧‧‧side
HB1、HB2‧‧‧狹縫寬度 HB1, HB2‧‧‧‧Slit width
HD‧‧‧手 HD‧‧‧hand
P1、P3、P4‧‧‧軸線 P1, P3, P4‧‧‧ axis
P2‧‧‧鉛直軸 P2‧‧‧ plumb shaft
SP1~SP3‧‧‧空間 SP1 ~ SP3‧‧‧Space
TS‧‧‧側面 TS‧‧‧ side
US‧‧‧頂壁面 US‧‧‧Top wall surface
W‧‧‧基板 W‧‧‧ substrate
圖1係實施例1之基板處理裝置之概略構成圖。 FIG. 1 is a schematic configuration diagram of a substrate processing apparatus according to the first embodiment.
圖2係顯示旋轉夾頭之構成(除了第2吐出口)之俯視圖。 FIG. 2 is a plan view showing the structure of the rotary chuck (except the second outlet).
圖3係顯示實施例1之第2氣體吐出部與氣體流路之縱剖視圖。 3 is a longitudinal sectional view showing a second gas discharge portion and a gas flow path in the first embodiment.
圖4係顯示狹縫狀之第2吐出口與其周邊之構成之俯視圖。 FIG. 4 is a plan view showing the configuration of the slit-shaped second outlet and its periphery.
圖5係將狹縫狀之第2吐出口之一部分放大之圖。 Fig. 5 is an enlarged view of a part of the slit-shaped second outlet.
圖6係實施例2之基板處理裝置之旋轉夾頭與其周邊構成之概略構成圖。 FIG. 6 is a schematic configuration diagram of a rotary chuck and its surroundings of the substrate processing apparatus of Embodiment 2. FIG.
圖7係顯示實施例2之第2氣體吐出部與氣體流路之縱剖視圖。 Fig. 7 is a longitudinal sectional view showing a second gas discharge portion and a gas flow path in the second embodiment.
圖8係顯示實施例3之第2氣體吐出部與氣體流路之縱剖視圖。 8 is a longitudinal sectional view showing a second gas discharge portion and a gas flow path in the third embodiment.
圖9係顯示狹縫狀之第2吐出口之變形例之俯視圖。 FIG. 9 is a plan view showing a modified example of the slit-shaped second outlet.
圖10係顯示狹縫狀之第2吐出口之變形例之俯視圖。 FIG. 10 is a plan view showing a modified example of the slit-shaped second outlet.
圖11係顯示第2吐出口之變形例之俯視圖。 FIG. 11 is a plan view showing a modified example of the second outlet.
圖12係顯示第2氣體吐出部之變形例之縱剖視圖。 FIG. 12 is a longitudinal sectional view showing a modified example of the second gas discharge portion.
圖13係顯示自基板上表面所觀察之產生於基板之下表面之微粒之情況的俯視圖。 FIG. 13 is a plan view showing the state of particles generated on the lower surface of the substrate as viewed from the upper surface of the substrate.
以下，參照圖式對本發明之實施例1進行說明。圖1係基板處理裝置1之概略構成圖。圖2係顯示旋轉夾頭2之構成(除了第2吐出口83)之俯視圖。圖3係顯示第2氣體吐出部81與氣體流路之縱剖視圖。 Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram of a substrate processing apparatus 1. FIG. 2 is a plan view showing the structure of the rotary chuck 2 (except the second outlet 83). FIG. 3 is a longitudinal sectional view showing the second gas discharge portion 81 and a gas flow path.
基板處理裝置1係依序對1片基板W進行處理之單片式裝置。基板W係使用例如直徑300mm之圓形基板。基板處理裝置1具備有旋轉夾頭2、旋轉驅動機構3、飛散防止杯5、處理機構7、及處理液供給機構9。 The substrate processing apparatus 1 is a single-chip apparatus that sequentially processes one substrate W. The substrate W is, for example, a circular substrate having a diameter of 300 mm. The substrate processing apparatus 1 includes a rotation chuck 2, a rotation driving mechanism 3, a scattering prevention cup 5, a processing mechanism 7, and a processing liquid supply mechanism 9.
旋轉夾頭2係藉由後述之6根支撐銷13而在將旋轉 基座11與基板W分離之狀態下以水平姿勢保持基板W者。又，旋轉夾頭2係構成為可將基板W繞鉛直方向之軸線P1加以旋轉。旋轉夾頭2具備有直徑較基板W大之旋轉基座11、及支撐銷13。 The rotary chuck 2 holds the substrate W in a horizontal posture with the rotation base 11 separated from the substrate W by six support pins 13 described later. The rotary chuck 2 is configured to rotate the substrate W about the axis P1 in the vertical direction. The rotary chuck 2 includes a rotary base 11 having a larger diameter than the substrate W, and a support pin 13.
再者，旋轉夾頭2相當於本發明之基板保持部。處理機構7及處理液供給機構9相當於本發明之處理部。支撐銷13相當於本發明之支撐構件。 The rotary chuck 2 corresponds to the substrate holding portion of the present invention. The processing mechanism 7 and the processing liquid supply mechanism 9 correspond to a processing unit of the present invention. The support pin 13 corresponds to a support member of the present invention.
旋轉基座11係構成為可繞鉛直方向之軸線P1旋轉。於旋轉基座11之下方經由支柱(boss)15而連結有旋轉軸17。旋轉軸17受到來自旋轉驅動機構3之驅動力而繞軸線P1旋轉。亦即，旋轉驅動機構3係使保持基板W之旋轉夾頭2進行旋轉者。旋轉驅動機構3具備有電動馬達等。 The rotation base 11 is configured to be rotatable about an axis P1 in the vertical direction. A rotation shaft 17 is connected below the rotation base 11 via a boss 15. The rotation shaft 17 receives a driving force from the rotation driving mechanism 3 and rotates about the axis P1. That is, the rotation driving mechanism 3 rotates the rotation chuck 2 holding the substrate W. The rotation driving mechanism 3 includes an electric motor and the like.
6根支撐銷13如圖2般在旋轉基座11之外周側且繞軸線P1呈環狀地被立設。亦即，於俯視時，6根支撐銷13在旋轉基座11之外周(外緣)附近，沿著圓周方向被等間隔地配置。再者，支撐銷13雖以6根所構成，但只要至少以3根以上來構成即可。 As shown in FIG. 2, six support pins 13 are erected on the outer peripheral side of the rotation base 11 in a ring shape around the axis P1. That is, the six support pins 13 are arranged at equal intervals in the circumferential direction near the outer periphery (outer edge) of the rotation base 11 in a plan view. In addition, although the support pin 13 is comprised by 6 pieces, it should just be comprised by at least 3 pieces.
支撐銷13具備有軀幹部19、傾斜部21、及抵接部23。軀幹部19係形成為圓柱狀。傾斜部21係設置於軀幹部19之上端，且被形成為大致圓錐狀。傾斜部21係以旋轉基座11之旋轉中心(軸線P1)側之傾斜成為平緩之方式所形成。於6根支撐銷13之傾斜部21，以如架設橋樑之方式載置有基板W。抵接部23係設置於傾斜部21之上端，且被設置於在俯視時中心自支撐銷13朝外方向偏移之位置。又，抵接部23於保持基板W時，與基板W之邊端抵接。 The support pin 13 includes a trunk portion 19, an inclined portion 21, and a contact portion 23. The trunk portion 19 is formed in a cylindrical shape. The inclined portion 21 is provided at the upper end of the trunk portion 19 and is formed in a substantially conical shape. The inclined portion 21 is formed so that the inclination of the rotation center (axis P1) side of the rotation base 11 becomes gentle. A substrate W is placed on the inclined portion 21 of the six support pins 13 in the same manner as a bridge. The abutting portion 23 is provided at the upper end of the inclined portion 21 and is provided at a position where the center self-supporting pin 13 is shifted outward in a plan view. In addition, the abutting portion 23 comes into contact with the edge of the substrate W when the substrate W is held.
於圖1、圖2中，6根支撐銷13中相鄰接之2根支撐 銷13，係被構成為可繞鉛直軸P2旋轉之可動支撐銷25。其他之支撐銷13係固定支撐銷26A、26B。再者，於未區別固定支撐銷26A、26B之情形時，作為固定支撐銷26而進行說明。可動支撐銷25與貫通旋轉基座11之旋轉軸27連結。又，於旋轉軸27之下端形成有磁鐵保持部29。磁鐵保持部29埋設有銷驅動用永久磁鐵31。 In Figs. 1 and 2, two adjacent support pins 13 of the six support pins 13 are configured as movable support pins 25 that can rotate about the vertical axis P2. The other support pins 13 are fixed support pins 26A and 26B. When the fixed support pins 26A and 26B are not distinguished, the description will be made as the fixed support pins 26. The movable support pin 25 is connected to a rotation shaft 27 penetrating the rotation base 11. A magnet holding portion 29 is formed at the lower end of the rotation shaft 27. A permanent magnet 31 for pin driving is embedded in the magnet holding portion 29.
銷驅動用永久磁鐵31藉由後述之杯側永久磁鐵103或解除用永久磁鐵105之磁力而繞鉛直軸P2被旋轉。若可動支撐銷25藉由銷驅動用永久磁鐵31等而被旋轉，便可以可動支撐銷25與固定支撐銷26來夾住而加以保持、或解除該保持。 The pin driving permanent magnet 31 is rotated about the vertical axis P2 by the magnetic force of a cup-side permanent magnet 103 or a release permanent magnet 105 described later. When the movable support pin 25 is rotated by the pin driving permanent magnet 31 or the like, the movable support pin 25 and the fixed support pin 26 can be held by being clamped or released.
再者，於圖2中，實際藉由6根支撐銷13中之2根可動支撐銷25與2根固定支撐銷26A來保持基板W。亦即，其餘2根固定支撐銷26B僅用來載置基板W，而未參與基板W之夾持。然而，可動支撐銷25之根數可為任意。例如若可動支撐銷25為3根，則3根可動支撐銷25亦可與其他3根固定支撐銷26一起夾住基板W。因此，實際雖藉由4根支撐銷13來保持基板W，但仍以藉由6根支撐銷13保持基板W來進行說明。 Furthermore, in FIG. 2, the substrate W is actually held by two movable support pins 25 and two fixed support pins 26A of the six support pins 13. That is, the remaining two fixed support pins 26B are used only for placing the substrate W, and do not participate in the clamping of the substrate W. However, the number of the movable support pins 25 may be arbitrary. For example, if there are three movable support pins 25, the three movable support pins 25 may sandwich the substrate W together with the other three fixed support pins 26. Therefore, although the substrate W is actually held by the four support pins 13, the description will be made by holding the substrate W by the six support pins 13.
於圖1中，在旋轉基座11之上表面載置有與基板W大致相同直徑之保護盤33。再者，保護盤33亦可以較基板W大之直徑所構成。保護盤33係圓板狀之構件。保護盤33係設置為可於旋轉基座11之上表面與由旋轉夾頭2所保持之基板W之間沿著支撐銷13進行升降。如圖2所示，保護盤33形成有1個中央開口部35、及6個周邊缺口部37。於中央開口部35配置有後述之第1氣體吐出部65。於各周邊缺口部37配置有支撐銷13。關於保護盤33，將於後進行說明。保護盤33相當於本發明之板狀保護構件。 In FIG. 1, a protective disk 33 having a diameter substantially the same as that of the substrate W is placed on the upper surface of the rotating base 11. In addition, the protective disk 33 may be formed with a larger diameter than the substrate W. The protection plate 33 is a disc-shaped member. The protection plate 33 is provided to be able to be raised and lowered along the support pin 13 between the upper surface of the rotation base 11 and the substrate W held by the rotation chuck 2. As shown in FIG. 2, the protection disk 33 is formed with one central opening portion 35 and six peripheral notch portions 37. A first gas discharge portion 65 described later is arranged in the central opening portion 35. A support pin 13 is arranged in each peripheral notch portion 37. The protection disk 33 will be described later. The protective plate 33 corresponds to the plate-shaped protective member of the present invention.
於圖1所示之旋轉基座11，在支撐銷13與後述之第1氣體吐出部65之間且支撐銷13側，形成有6個開口部39。各開口部39係供在保護盤33之下表面所設置之磁鐵保持下垂片41通過。於磁鐵保持下垂片41係埋設有將磁極方向朝向上下方向之盤用永久磁鐵43。於圖2之俯視時，6個盤用永久磁鐵43係繞軸線P1呈環狀地被配置。 In the rotating base 11 shown in FIG. 1, six opening portions 39 are formed between the support pin 13 and a first gas outlet portion 65 described later on the support pin 13 side. Each opening 39 passes through a magnet holding pendant 41 provided on the lower surface of the protection plate 33. A permanent magnet 43 for a disk is provided in the magnet holding pendant piece 41 with the magnetic pole direction directed upward and downward. In a plan view in FIG. 2, the six disk permanent magnets 43 are arranged in a ring shape around the axis P1.
於旋轉基座11之下表面設置有移動導引部45。移動導引部45具備有線性軸承47與限制銷49。線性軸承47將限制銷49之軸部沿著鉛直方向升降自如地進行導引。限制銷49其軸部之上邊端貫通旋轉基座11而被連結於保護盤33之下表面。於限制銷49之軸部下端形成有凸緣。於圖2所示之俯視時，移動導引部45設置有3個。3個移動導引部45繞軸線P1被等間隔地配置為環狀。 A moving guide 45 is provided on the lower surface of the rotating base 11. The movement guide 45 includes a linear bearing 47 and a restriction pin 49. The linear bearing 47 guides the shaft portion of the restriction pin 49 in a vertical direction in a vertical direction. The upper end of the shaft portion of the restriction pin 49 penetrates the rotation base 11 and is connected to the lower surface of the protection plate 33. A flange is formed at the lower end of the shaft portion of the restriction pin 49. In a plan view shown in FIG. 2, three moving guides 45 are provided. The three movement guides 45 are arranged in a ring shape at equal intervals around the axis P1.
於圖1、圖3中，於旋轉軸17連結有支柱15。旋轉軸17係形成為中空。該中空之旋轉軸17之內部，供氣體供給內側管51與氣體供給外側管53通過。氣體供給外側管53係以氣體在氣體供給內側管51之外周通過之方式所構成。氣體供給內側管51及氣體供給外側管53並未抵接於旋轉軸17之內周面，而維持靜止之狀態。於支柱15之上表面安裝有前端保持部55。前端保持部55於其中央具備有開口部57。於開口部57經由軸承部59及密封61而安裝有保持筒63。保持筒63係安裝於氣體供給內側管51之前端側。保持筒64同樣地被安裝於氣體供給外側管53之前端側。 In FIGS. 1 and 3, a support post 15 is connected to a rotation shaft 17. The rotation shaft 17 is hollow. Inside the hollow rotating shaft 17, a gas supply inner pipe 51 and a gas supply outer pipe 53 are passed. The gas supply outer pipe 53 is configured such that gas passes through the outer periphery of the gas supply inner pipe 51. The gas supply inner pipe 51 and the gas supply outer pipe 53 are not in contact with the inner peripheral surface of the rotating shaft 17 and are maintained in a stationary state. A tip holding portion 55 is attached to the upper surface of the pillar 15. The tip holding portion 55 is provided with an opening portion 57 in the center thereof. A holding cylinder 63 is attached to the opening portion 57 via the bearing portion 59 and the seal 61. The holding tube 63 is attached to the front end side of the gas supply inner tube 51. Similarly, the holding cylinder 64 is attached to the front end side of the gas supply outer pipe 53.
第1氣體吐出部65係設置於由旋轉夾頭2所保持之基板W之中心(軸線P1)下方。第1氣體吐出部65係以氣體自基板 W中心側朝向基板W之外周側流動於基板W與保護盤33之間之方式，對基板W之下表面吐出(噴出)氣體。藉此，抑制如後述般被供給至基板W之上表面之處理液繞入基板W之下表面之情形。 The first gas discharge portion 65 is provided below the center (axis P1) of the substrate W held by the spin chuck 2. The first gas discharge portion 65 discharges (spouts) gas onto the lower surface of the substrate W such that the gas flows between the substrate W and the protective disk 33 from the center side of the substrate W toward the outer peripheral side of the substrate W. This prevents the processing liquid supplied to the upper surface of the substrate W from being entangled with the lower surface of the substrate W as described later.
第1氣體吐出部65具備有上部吐出構件66與下部吐出構件67。於前端保持部55之上表面安裝有下部吐出構件67。又，於下部吐出構件67之上表面經由複數個腳部68而安裝有上部吐出構件66。下部吐出構件67在與軸線P1相交之部分形成有凹部69及孔部71。上部吐出構件66與下部吐出構件67形成如包圍繞軸線P1之環之全周般之狹縫狀之第1吐出口73、及用以對第1吐出口73供給氣體之第1氣體流路75。在氣體供給內側管51被輸送之氣體，通過第1氣體流路75而自第1吐出口73朝俯視時之全方向被噴出。 The first gas discharge portion 65 includes an upper discharge member 66 and a lower discharge member 67. A lower discharge member 67 is attached to the upper surface of the tip holding portion 55. An upper ejection member 66 is attached to the upper surface of the lower ejection member 67 via a plurality of legs 68. The lower discharge member 67 is formed with a recess 69 and a hole 71 in a portion intersecting the axis P1. The upper discharge member 66 and the lower discharge member 67 form a first discharge port 73 having a slit shape like the entire circumference of a circle around the axis P1, and a first gas flow path 75 for supplying gas to the first discharge port 73. . The gas conveyed in the gas supply inner pipe 51 is ejected from the first outlet 73 through the first gas flow path 75 in all directions in a plan view.
再者，於圖3所示之第1氣體流路75中，腳部看起來腳部68無法供氣體通過。然而，複數個腳部68繞軸線P1被配置，氣體可通過鄰接之2個腳部68之間而自氣體供給內側管51被輸送至第1吐出口73。 Furthermore, in the first gas flow path 75 shown in FIG. 3, it appears that the leg portion 68 cannot pass gas through. However, the plurality of leg portions 68 are arranged around the axis P1, and gas can be transported from the gas supply inner tube 51 to the first outlet port 73 through the two adjacent leg portions 68.
於圖1中，基板處理裝置1具備有第1氣體供給源77A、第1氣體供給配管77B、及開閉閥77C。第1氣體供給配管77B之一端係連接於第1氣體供給源77A，第1氣體供給配管77B之另一端係連接於氣體供給內側管51。於第1氣體供給配管77B設置有進行氣體之供給及其之供給停止之開閉閥77C。所供給之氣體例如使用氮氣(N2)、氬氣(Ar)、復位氣體(homing gas)(N2+H2)等惰性氣體、或空氣。再者，所供給之氣體在後述之第2氣體供給源92A之情形時亦相同。 In FIG. 1, the substrate processing apparatus 1 includes a first gas supply source 77A, a first gas supply pipe 77B, and an on-off valve 77C. One end of the first gas supply pipe 77B is connected to the first gas supply source 77A, and the other end of the first gas supply pipe 77B is connected to the gas supply inner pipe 51. The first gas supply pipe 77B is provided with an on-off valve 77C for supplying gas and stopping the supply thereof. The supplied gas is, for example, an inert gas such as nitrogen (N 2 ), argon (Ar), or resetting gas (N 2 + H 2 ), or air. The supplied gas is also the same in the case of the second gas supply source 92A described later.
在上述第1氣體吐出部65所進行之氣體之吐出中，存在有處理液繞入之抑制效果不充分之情形。因此，除了第1氣體吐出部65以外，基板處理裝置1還具備有第2氣體吐出部81及其供給系統。 In the discharge of the gas performed by the first gas discharge unit 65, there is a case where the effect of suppressing the surrounding of the treatment liquid is insufficient. Therefore, in addition to the first gas discharge portion 65, the substrate processing apparatus 1 includes a second gas discharge portion 81 and a supply system thereof.
圖4係顯示第2氣體吐出部81之狹縫狀之第2吐出口83與其周邊之構成之俯視圖。第2氣體吐出部81具備有狹縫狀之第2吐出口83。如圖4所示，狹縫狀之第2吐出口83於以俯視觀察由旋轉夾頭2所保持之基板W時，被設置在較6根支撐銷13靠軸線P1側且基板W或旋轉基座11之外周側。亦即，第2吐出口83係設置於6根支撐銷13之內側且6根支撐銷13之附近。第2吐出口83係設置於較第1吐出口73更靠外周。如圖3所示，除了第1氣體吐出部65所進行之氣體之吐出，第2氣體吐出部81對6根支撐銷13之各者與基板W之邊端之接觸部分附近吐出氣體。再者，第2吐出口83相當於本發明之吐出口。 FIG. 4 is a plan view showing the configuration of the slit-shaped second outlet port 83 of the second gas outlet portion 81 and its surroundings. The second gas discharge portion 81 includes a slit-shaped second discharge port 83. As shown in FIG. 4, the slit-shaped second outlet port 83 is provided on the axis P1 side of the six support pins 13 and the substrate W or the rotating base when the substrate W held by the rotary chuck 2 is viewed from above. The outer periphery of the seat 11. That is, the second outlet 83 is provided inside the six support pins 13 and near the six support pins 13. The second discharge port 83 is provided closer to the outer periphery than the first discharge port 73. As shown in FIG. 3, in addition to the gas ejection performed by the first gas ejection portion 65, the second gas ejection portion 81 ejects gas near the contact portion between each of the six support pins 13 and the edge of the substrate W. The second outlet 83 corresponds to the outlet of the present invention.
狹縫狀之第2吐出口83係單一地構成，且被形成為環狀。亦即，1個狹縫狀之第2吐出口83呈繞軸線P1之環狀，沿著該環CR之外周呈長形且遍及環CR之大致全周被形成。藉此，狹縫狀之第2吐出口83可對包含支撐銷13與基板W之邊端之接觸部分之基板W下表面邊端附近之大致全周吐出氣體。因此，可改善處理液朝向基板W之下表面之外周側之全周繞入之抑制效果。再者，環CR較佳為正圓。 The slit-shaped second discharge port 83 is formed in a single shape and is formed in a ring shape. That is, the one slit-shaped second discharge port 83 has a ring shape around the axis P1, and is formed along the outer periphery of the ring CR and is formed over the entire circumference of the ring CR. Thereby, the slit-shaped second discharge port 83 can discharge the gas over substantially the entire periphery of the vicinity of the lower end of the substrate W including the contact portion between the support pin 13 and the end of the substrate W. Therefore, it is possible to improve the effect of suppressing the entrapment of the processing liquid toward the entire periphery of the outer peripheral side of the lower surface of the substrate W. The ring CR is preferably a perfect circle.
又，圖5係將狹縫狀之第2吐出口83之一部分放大之圖。如圖4、圖5所示，狹縫狀之第2吐出口83係構成為分別與6根支撐銷13對向之部分83A之狹縫寬度HB1，較對向之部分83A 以外之部分83B之狹縫寬度HB2更寬(狹縫寬度HB1>狹縫寬度HB2)。藉此，狹縫狀之第2吐出口83可利用分別與6根支撐銷13對向之部分83A，吐出較對向之部分83A以外之部分83B更多之氣體。 FIG. 5 is an enlarged view of a part of the slit-like second outlet 83. As shown in FIG. 4 and FIG. 5, the slit-shaped second outlet 83 is formed with a slit width HB1 of a portion 83A opposed to the six support pins 13, which is larger than a portion 83B other than the opposed portion 83A. The slit width HB2 is wider (slit width HB1> slit width HB2). Thereby, the slit-shaped second discharge port 83 can use a portion 83A opposed to the six support pins 13 to discharge more gas than a portion 83B other than the opposed portion 83A.
第2氣體吐出部81之第2吐出口83，以個別地通過6根支撐銷13之各者與基板W之邊端之接觸部分附近(例如基板W之下表面之邊端EG)之方式，於俯視時呈放射狀地吐出氣體。部分83A雖與支撐銷13對向，但部分83A以外之部分83B不與支撐銷13對向。因此，部分83B係形成為使自部分83B所吐出之氣體通過基板下表面之邊端EG附近(參照圖3)。亦即，部分83B係形成為若支撐銷13存在，自部分83B所吐出之氣體便通過與支撐銷13接觸之基板W之邊端EG附近。狹縫狀之第2吐出口83係形成為朝向基板W之外周側且斜上方。第2吐出口83例如被形成為朝向接觸部分(或基板W之下表面之邊端EG)附近。又，由於有第1氣體吐出部65所吐出之氣體之流動之影響，因此第2吐出口83亦可形成為朝向較接觸部分(或基板W之下表面之邊端EG)更靠基板W之中心側之位置。亦即，第2吐出口83亦可對較基板W之邊端EG更內側之基板W之下表面吐出。 The second outlet port 83 of the second gas outlet portion 81 passes through each of the six support pins 13 in the vicinity of the contact portion with the edge of the substrate W (for example, the edge EG on the lower surface of the substrate W). The gas is emitted radially in a plan view. Although the portion 83A is opposed to the support pin 13, the portion 83B other than the portion 83A is not opposed to the support pin 13. Therefore, the portion 83B is formed so that the gas discharged from the portion 83B passes near the edge EG of the lower surface of the substrate (see FIG. 3). That is, the portion 83B is formed such that if the support pin 13 is present, the gas discharged from the portion 83B passes near the edge EG of the substrate W that is in contact with the support pin 13. The slit-shaped second outlet port 83 is formed so as to face the outer peripheral side of the substrate W and diagonally upward. The second discharge port 83 is formed, for example, toward the vicinity of the contact portion (or the edge end EG on the lower surface of the substrate W). In addition, due to the influence of the flow of the gas discharged from the first gas discharge portion 65, the second discharge port 83 may be formed to be closer to the substrate W than the contact portion (or the edge EG on the lower surface of the substrate W). Position on the center side. That is, the second ejection opening 83 may be ejected to the lower surface of the substrate W which is more inward than the edge end EG of the substrate W.
如圖3所示，於保護盤33之內部設置有空間SP1。空間SP1係大致圓板狀之空間。保護盤33之軸線P1側之邊端，設置有朝下方延伸之導引部85。空間SP1係延伸至導引部85之內部為止。於導引部85設置有用以使空間SP1與第2氣體流路79連通之連通口87。於支柱15形成有可收容導引部85之導引溝89。於下部吐出構件67設置有上限制部67A。不包含導引部85之保護盤 33可在旋轉基座11上表面與上限制部67A之間進行升降。 As shown in FIG. 3, a space SP1 is provided inside the protection disk 33. The space SP1 is a substantially disk-shaped space. A guide portion 85 extending downward is provided on the side end of the protection plate 33 on the axis P1 side. The space SP1 extends to the inside of the guide portion 85. The guide portion 85 is provided with a communication port 87 for communicating the space SP1 with the second gas flow path 79. A guide groove 89 capable of accommodating the guide portion 85 is formed in the pillar 15. The lower discharge member 67 is provided with an upper restricting portion 67A. The protection plate 33 not including the guide portion 85 can be raised and lowered between the upper surface of the rotary base 11 and the upper restricting portion 67A.
又，支柱15與前端保持部55形成第2氣體流路79。第2氣體流路79係將由氣體供給外側管53所輸送之氣體送至空間SP1者。再者，於圖3中，支柱15與前端保持部55看起來分離。然而，例如，第2氣體流路79係形成為繞氣體供給內側管51而等間隔地朝8方向分歧，在未形成有第2氣體流路79之部分，支柱15與前端保持部55相連結。 Further, the pillar 15 and the tip holding portion 55 form a second gas flow path 79. The second gas flow path 79 is a person that sends the gas conveyed by the gas supply outer pipe 53 to the space SP1. Furthermore, in FIG. 3, the pillar 15 and the front-end holding portion 55 appear to be separated. However, for example, the second gas flow path 79 is formed so as to diverge at equal intervals around the gas supply inner pipe 51 in the 8 direction. In a portion where the second gas flow path 79 is not formed, the pillar 15 and the front-end holding portion 55 are connected. .
又，如圖1所示，基板處理裝置1具備有第2氣體供給源92A、第2氣體供給配管92B、及開閉閥92C。第2氣體供給配管92B之一端係連接於第2氣體供給源92A，第2氣體供給配管92B之另一端係連接於氣體供給外側管53。於第2氣體供給配管92B設置有進行氣體供給及其之供給停止之開閉閥92C。再者，於第2氣體供給配管92B亦可設置有流量調整閥。 As shown in FIG. 1, the substrate processing apparatus 1 includes a second gas supply source 92A, a second gas supply pipe 92B, and an on-off valve 92C. One end of the second gas supply pipe 92B is connected to the second gas supply source 92A, and the other end of the second gas supply pipe 92B is connected to the gas supply outer pipe 53. The second gas supply pipe 92B is provided with an on-off valve 92C for performing gas supply and stopping the supply thereof. In addition, a flow rate adjustment valve may be provided in the second gas supply pipe 92B.
飛散防止杯5係設置於旋轉夾頭2之周圍，防止處理液自旋轉夾頭2所支撐之基板W朝周圍飛散之情形。飛散防止杯5係構成為可藉由杯升降機構CM而沿著鉛直方向進行升降。杯升降機構CM使飛散防止杯5遍及交接基板W時之下位置、與處理基板W時之上位置而進行升降。杯升降機構CM具備有汽缸或電動馬達等。杯升降機構CM相當於本發明之升降機構。 The scattering prevention cup 5 is provided around the rotation chuck 2 to prevent the processing liquid from being scattered from the substrate W supported by the rotation chuck 2 to the surroundings. The scattering prevention cup 5 is configured to be vertically movable by the cup elevation mechanism CM. The cup elevating mechanism CM raises and lowers the scattering prevention cup 5 over the lower position when the substrate W is transferred and the upper position when the substrate W is processed. The cup lifting mechanism CM is provided with a cylinder, an electric motor, or the like. The cup lifting mechanism CM is equivalent to the lifting mechanism of the present invention.
具體而言，飛散防止杯5具備有圓筒部93、下導引部95、上導引部97、及上緣部98。由上導引部97與下導引部95所區隔之空間，形成對進行基板W之處理時朝周圍飛散之處理液進行回收之排液部101。下導引部95於內周側之前邊端埋設有杯側永久磁鐵103。 Specifically, the scattering prevention cup 5 includes a cylindrical portion 93, a lower guide portion 95, an upper guide portion 97, and an upper edge portion 98. A space separated by the upper guide portion 97 and the lower guide portion 95 forms a liquid discharge portion 101 that collects a processing liquid scattered around the substrate W when the substrate W is processed. A cup-side permanent magnet 103 is embedded in the lower guide portion 95 at the front end of the inner peripheral side.
如圖2所示，杯側永久磁鐵103係形成為於俯視時繞軸線P1之環狀。杯側永久磁鐵103之半徑方向之位置係較盤用永久磁鐵43更外側，且較銷驅動用永久磁鐵31更內側(靠軸線P1側)。杯側永久磁鐵103係以其磁極方向朝向半徑方向之方式被埋設。 As shown in FIG. 2, the cup-side permanent magnet 103 is formed in a ring shape around the axis P1 in a plan view. The position of the cup-side permanent magnet 103 in the radial direction is more outward than the disk permanent magnet 43 and more inward (on the axis P1 side) than the pin driving permanent magnet 31. The cup-side permanent magnet 103 is embedded so that the direction of the magnetic poles thereof faces the radial direction.
於上緣部98埋設有解除用永久磁鐵105。解除用永久磁鐵105係形成為於俯視時繞軸線P1之環狀。解除用永久磁鐵105之半徑方向之位置係較銷驅動用永久磁鐵31更外側。解除用永久磁鐵105係以其磁極方向朝向半徑方向之方式被埋設。又，解除用永久磁鐵105之半徑方向內側之磁極係以成為與杯側永久磁鐵103之半徑方向外側之磁極相同之磁極(例如N極)之方式所構成。 A permanent magnet 105 for release is embedded in the upper edge portion 98. The permanent magnet 105 for release is formed in a ring shape around the axis P1 in a plan view. The position in the radial direction of the permanent magnet 105 for release is further outside than the permanent magnet 31 for pin driving. The permanent magnet for release 105 is buried so that the direction of the magnetic poles thereof faces the radial direction. The magnetic pole on the inner side in the radial direction of the permanent magnet 105 for release is configured to have the same magnetic pole (for example, N pole) as the magnetic pole on the outer side in the radial direction of the cup-side permanent magnet 103.
杯側永久磁鐵103於接近可動支撐銷25之銷驅動用永久磁鐵31時，藉由磁力使可動支撐銷25在俯視時旋轉而朝向保持位置驅動，並使其維持該狀態。另一方面，解除用永久磁鐵105於靠近銷驅動用永久磁鐵31時，藉由磁力使可動支撐銷25在俯視時旋轉而驅動至開放位置，並使其維持該狀態。 When the cup-side permanent magnet 103 approaches the pin-driving permanent magnet 31 of the movable support pin 25, the movable support pin 25 is rotated toward the holding position by magnetic force in a plan view, and is maintained in this state. On the other hand, when the permanent magnet for release 105 approaches the permanent magnet 31 for pin driving, the movable support pin 25 is rotated to the open position by a magnetic force in a plan view, and is maintained in this state.
圖1所示之處理機構7及處理液供給機構9係構成為對由旋轉夾頭2所保持並藉由旋轉驅動機構3加以旋轉之基板W之上表面供給處理液，而進行利用刷子107之刷洗處理。 The processing mechanism 7 and the processing solution supply mechanism 9 shown in FIG. Brush treatment.
於本實施例中，處理機構7具備有刷子107、擺動臂109、及臂驅動機構AM。刷子107經由處理液對基板W之上表面進行刷洗洗淨。於擺動臂109之一端安裝有刷子107，擺動臂109係構成為可繞其另一端之軸線P3擺動(迴旋)。臂驅動機構AM使刷子107及擺動臂109繞軸線P3旋轉。臂驅動機構AM具備有電動 馬達等。再者，刷子107係藉由具有電動馬達等之驅動機構(未圖示)而繞鉛直方向之軸線P4被旋轉驅動。又，亦可被構成為可自刷子107供給處理液。 In this embodiment, the processing mechanism 7 includes a brush 107, a swing arm 109, and an arm drive mechanism AM. The brush 107 scrubs and cleans the upper surface of the substrate W through the processing liquid. A brush 107 is mounted on one end of the swing arm 109, and the swing arm 109 is configured to swing (rotate) about the axis P3 of the other end. The arm driving mechanism AM rotates the brush 107 and the swing arm 109 about the axis P3. The arm drive mechanism AM includes an electric motor and the like. The brush 107 is driven to rotate about an axis P4 in the vertical direction by a driving mechanism (not shown) such as an electric motor. Moreover, it can also be comprised so that the processing liquid can be supplied from the brush 107.
處理液供給機構9具備有處理液供給源111A、處理液配管111B、開閉閥111C、及處理液噴嘴111D。處理液供給源111A供給處理液。處理液例如可使用APM(氨過氧化氫水混合溶液)、純水(DIW)、碳酸水、氫水、氨水(NH4OH)、SC1(標準清潔液1)、SC2(標準清潔液2)、檸檬酸水溶液、FOM(氫氟酸/臭氧之混合藥液)、FPM(氫氟酸/過氧化氫水/純水之混合藥液)、氫氟酸(HF)、HCl(氫氯酸)、IPA(異丙醇)、TMAH(四甲基氫氧化銨)、三甲基-2-羥乙基氫氧化銨水溶液(CHOLINE；膽鹼)。 The processing liquid supply mechanism 9 includes a processing liquid supply source 111A, a processing liquid pipe 111B, an on-off valve 111C, and a processing liquid nozzle 111D. The processing liquid supply source 111A supplies a processing liquid. As the treatment liquid, for example, APM (ammonia hydrogen peroxide water mixed solution), pure water (DIW), carbonated water, hydrogen water, ammonia water (NH 4 OH), SC1 (standard cleaning solution 1), SC2 (standard cleaning solution 2) can be used. Citric acid aqueous solution, FOM (hydrofluoric acid / ozone mixed chemical solution), FPM (hydrofluoric acid / hydrogen peroxide water / pure water mixed chemical solution), hydrofluoric acid (HF), HCl (hydrochloric acid) , IPA (isopropanol), TMAH (tetramethylammonium hydroxide), trimethyl-2-hydroxyethylammonium hydroxide aqueous solution (CHOLINE; choline).
於處理液配管111B之一端連接有處理液供給源111A，於處理液配管111B之另一端連接有處理液噴嘴111D。於處理液配管111B設置有進行處理液之供給及其之供給停止之開閉閥111C。處理液噴嘴111D之前端若被朝向基板W之上表面之旋轉中心(軸線P1)，開閉閥111C被開啟，自處理液噴嘴111D所吐出之處理液便著液於基板W之上表面之旋轉中心附近。 A processing liquid supply source 111A is connected to one end of the processing liquid pipe 111B, and a processing liquid nozzle 111D is connected to the other end of the processing liquid pipe 111B. The processing liquid pipe 111B is provided with an on-off valve 111C for supplying and stopping the supply of the processing liquid. If the front end of the processing liquid nozzle 111D is directed toward the center of rotation of the upper surface of the substrate W (axis P1), the on-off valve 111C is opened, and the processing liquid discharged from the processing liquid nozzle 111D is deposited on the center of rotation of the upper surface of the substrate W nearby.
上述之基板處理裝置1之各構成係總括地由控制部113所控制。控制部113具備有CPU(中央運算處理裝置)與記憶體等。控制部113例如操作杯升降機構CM，使飛散防止杯5進行升降。又，控制部113操作臂驅動機構AM使刷子107進行擺動。又，控制部113操作開閉閥77C、92C、111C而對各配管進行開閉。又，控制部113操作旋轉驅動機構3，使由旋轉夾頭2所保持之基板W進行旋轉。 The respective components of the substrate processing apparatus 1 described above are controlled by the control unit 113 collectively. The control unit 113 includes a CPU (Central Processing Unit), a memory, and the like. The control unit 113 operates, for example, the cup elevating mechanism CM to raise and lower the scattering prevention cup 5. In addition, the control unit 113 operates the arm drive mechanism AM to swing the brush 107. The control unit 113 operates the on-off valves 77C, 92C, and 111C to open and close each of the pipes. The control unit 113 operates the rotation driving mechanism 3 to rotate the substrate W held by the spin chuck 2.
其次，對基板處理裝置1之動作進行說明。於圖1中，保護盤33位於旋轉基座11側、即旋轉基座11上。又，飛散防止杯5位於下位置。刷子107於俯視時位於旋轉夾頭2之外方向之待機位置。 Next, the operation of the substrate processing apparatus 1 will be described. In FIG. 1, the protection plate 33 is located on the rotation base 11 side, that is, on the rotation base 11. The scattering prevention cup 5 is located at the lower position. The brush 107 is located in a standby position in a direction other than the rotation chuck 2 in a plan view.
未圖示之基板搬送機構將基板W搬送至旋轉夾頭2。於圖1中，用以保持基板W之基板搬送機構之手係以符號HD來表示。基板W例如以形成有電子電路之元件面成為向下之方式，被載置於6根支撐銷13之傾斜部21。由於飛散防止杯5位於下位置，因此解除用永久磁鐵105與銷驅動用永久磁鐵31藉由各自之磁力而互斥或相吸，使可動支撐銷25被維持在開放位置。亦即，旋轉夾頭2係維持在將基板W之保持解除之狀態。 A substrate transfer mechanism (not shown) transfers the substrate W to the spin chuck 2. In FIG. 1, the hand of the substrate transfer mechanism for holding the substrate W is represented by the symbol HD. The substrate W is placed on the inclined portion 21 of the six support pins 13 such that the element surface on which the electronic circuit is formed faces downward, for example. Since the scattering prevention cup 5 is in the lower position, the permanent magnets 105 for release and the permanent magnets 31 for pin driving are mutually exclusive or attracted by their respective magnetic forces, and the movable support pin 25 is maintained in the open position. That is, the rotary chuck 2 is maintained in a state where the holding of the substrate W is released.
於將基板W載置於傾斜部21並使基板搬送機構之手HD退避之後，杯升降機構CM使飛散防止杯5上升。使飛散防止杯5位於基板處理時之上位置。藉此，杯側永久磁鐵103與銷驅動用永久磁鐵31互斥或相吸，使可動支撐銷25繞鉛直軸P2旋轉而被維持在保持位置。藉此，於圖2中，一邊以6根支撐銷13之抵接部23抵接基板W之邊端，一邊夾住基板W。亦即，旋轉夾頭2藉由6根支撐銷13，在旋轉基座11與基板W分離之狀態下，將基板W加 以保持。 After the substrate W is placed on the inclined portion 21 and the hand HD of the substrate transfer mechanism is retracted, the cup lifting mechanism CM raises the scattering prevention cup 5. The scattering prevention cup 5 is positioned above the substrate during processing. Thereby, the cup-side permanent magnet 103 and the pin driving permanent magnet 31 are mutually exclusive or attract each other, and the movable support pin 25 is rotated about the vertical axis P2 and is maintained in a holding position. As a result, in FIG. 2, the substrate W is sandwiched while the abutting portions 23 of the six support pins 13 abut against the edge ends of the substrate W. That is, the rotation chuck 2 holds the substrate W in a state where the rotation base 11 is separated from the substrate W by the six support pins 13.
又，若飛散防止杯5上升，杯側永久磁鐵103與保護盤33之盤用永久磁鐵43便會互斥，使保護盤33與飛散防止杯5一起上升。然後，若使飛散防止杯5位於上位置，保護盤33便一邊接觸於圖3所示之上限制部67A，一邊被維持在處理位置。 When the scattering prevention cup 5 rises, the cup-side permanent magnet 103 and the disk permanent magnet 43 of the protection plate 33 mutually repel, so that the protection plate 33 and the scattering prevention cup 5 rise together. When the scattering prevention cup 5 is positioned at the upper position, the protection plate 33 is maintained at the processing position while contacting the upper restricting portion 67A shown in FIG. 3.
第1氣體吐出部65及第2氣體吐出部81對由旋轉夾頭2所保持之基板W之下表面吐出氣體。具體地進行說明。 The first gas discharge portion 65 and the second gas discharge portion 81 discharge gas to the lower surface of the substrate W held by the spin chuck 2. Specific description will be made.
為了抑制繞入基板W之下表面之情形，第1氣體吐出部65以氣體自基板W中心側朝向基板W外周側流動於基板W與保護盤33之間之方式，對基板W之下表面吐出氣體。若開閉閥77C被開放，氣體便自第1氣體供給源77A通過第1氣體供給配管77B被輸送至氣體供給內側管51。被輸送至氣體供給內側管51之氣體，係輸送至由上部吐出構件66與下部吐出構件67所形成之第1氣體流路75，而自第1吐出口73被吐出。於俯視時，氣體自狹縫狀之第1吐出口73朝全方向被吐出。 In order to suppress the circumvention of the lower surface of the substrate W, the first gas discharge portion 65 ejects the lower surface of the substrate W such that a gas flows from the center side of the substrate W toward the outer peripheral side of the substrate W between the substrate W and the protective disk 33 gas. When the on-off valve 77C is opened, the gas is sent from the first gas supply source 77A to the gas supply inner pipe 51 through the first gas supply pipe 77B. The gas sent to the gas supply inner pipe 51 is sent to the first gas flow path 75 formed by the upper discharge member 66 and the lower discharge member 67 and is discharged from the first discharge port 73. In a plan view, the gas is discharged in all directions from the slit-shaped first discharge port 73.
被吐出之氣體自基板W之中心側朝向基板W之外側而流動於基板W之下表面與保護盤33之間。然後，氣體自基板W及保護盤33之邊端朝除了支撐銷13外之全方向被噴出。藉此，可抑制被供給至基板W之上表面之處理液繞入基板之下表面之情形。 The discharged gas flows from the center side of the substrate W to the outside of the substrate W, and flows between the lower surface of the substrate W and the protective disk 33. Then, the gas is ejected from the edge ends of the substrate W and the protection plate 33 in all directions except the support pin 13. Thereby, it is possible to suppress the processing liquid supplied to the upper surface of the substrate W from being wound around the lower surface of the substrate.
由第1氣體吐出部65所進行氣體之吐出，抑制處理液之繞入。然而，存在有利用由第1氣體吐出部65所進行之氣體吐出，處理液繞入之抑制效果會不充分之情形。因此，在藉由第1 氣體吐出部65吐出氣體時，亦自第2氣體吐出部81吐出氣體。 The discharge of the gas by the first gas discharge unit 65 suppresses the surrounding of the processing liquid. However, there may be a case where the effect of suppressing the treatment liquid from being entangled may be insufficient by using the gas discharge by the first gas discharge unit 65. Therefore, when the gas is discharged by the first gas discharge portion 65, the gas is also discharged from the second gas discharge portion 81.
於俯視觀察基板W時，第2氣體吐出部81係設置於較呈環狀被立設之6根支撐銷更靠軸線P1側且基板W之外周側。如此所構成之第2氣體吐出部81，對6根支撐銷13之各者與基板W之邊端之接觸部分附近吐出氣體。 When the substrate W is viewed in a plan view, the second gas discharge portion 81 is provided on the axis P1 side and the outer peripheral side of the substrate W than the six support pins that are erected in a ring shape. The second gas discharge portion 81 configured in this manner discharges gas to the vicinity of the contact portion between each of the six support pins 13 and the edge of the substrate W.
於圖1中，若開閉閥92C被開啟，氣體便自第2氣體供給源92A通過第2氣體供給配管92B被輸送至氣體供給外側管53。於圖3中，被輸送至氣體供給外側管53之氣體係依照由支柱15與前端保持部55所形成之第2氣體流路79、連通口87、空間SP1之順序被輸送，而自狹縫狀之第2吐出口83被吐出。又，於俯視時，氣體自狹縫狀之第2吐出口83朝全方向被吐出。此外，第2吐出口83係構成為分別與6根支撐銷13對向之部分83A之狹縫寬度HB1，較對向之部分83A以外之部分83B之狹縫寬度HB2更寬。因此，自第2吐出口83之對向之部分83A，可較對向之部分83A以外之部分83B吐出更多之氣體。又，由於被立設於旋轉基座11之支撐銷13與保護盤33一起旋轉，因此支撐銷13與狹縫寬度HB1(83A)之部分對向之狀態被維持。亦即，支撐銷13與部分HB1之相對位置被維持。 In FIG. 1, when the on-off valve 92C is opened, the gas is transferred from the second gas supply source 92A to the gas supply outer pipe 53 through the second gas supply pipe 92B. In FIG. 3, the gas system delivered to the gas supply outer pipe 53 is conveyed in the order of the second gas flow path 79, the communication port 87, and the space SP1 formed by the pillar 15 and the front-end holding portion 55, and passes from the slit. The second ejection opening 83 is ejected. Further, in a plan view, the gas is discharged in all directions from the slit-shaped second discharge port 83. In addition, the second discharge opening 83 is configured to have a slit width HB1 in a portion 83A facing the six support pins 13, which is wider than a slit width HB2 in a portion 83B other than the facing portion 83A. Therefore, the portion 83A opposite to the second outlet 83 can emit more gas than the portion 83B other than the portion 83A opposite to the opposite portion 83A. In addition, since the support pin 13 erected on the rotation base 11 rotates together with the protection plate 33, the state where the support pin 13 and the part of the slit width HB1 (83A) face each other is maintained. That is, the relative position of the support pin 13 and the part HB1 is maintained.
於圖1中，在朝向基板W之下表面繞入之抑制效果被強化之狀態下，對基板W之上表面實施利用刷子107之刷洗洗淨。旋轉驅動機構3使旋轉軸17及旋轉基座11等之旋轉夾頭2進行旋轉。藉此，基板W繞軸線P1進行旋轉。於基板W之旋轉後，藉由未 圖示之噴嘴，朝向進行旋轉之基板W之上表面之中心(軸線P1)實施供給純水之預沖洗處理。該處理係不進行刷子107之動作而進行。於預沖洗處理後，自處理液噴嘴111D朝向進行旋轉之基板W之上表面之中心(軸線P1)吐出處理液。若開啟開閉閥111C，處理液便自處理液供給源111A通過處理液配管111B被輸送至處理液噴嘴111D。 In FIG. 1, the upper surface of the substrate W is scrubbed and washed with the brush 107 in a state where the suppression effect of the winding toward the lower surface of the substrate W is strengthened. The rotation driving mechanism 3 rotates the rotation chuck 2 such as the rotation shaft 17 and the rotation base 11. Thereby, the substrate W is rotated around the axis P1. After the substrate W is rotated, a pre-rinsing process of supplying pure water is performed toward the center (axis P1) of the upper surface of the substrate W that is rotated through a nozzle (not shown). This processing is performed without performing the operation of the brush 107. After the pre-rinsing process, the processing liquid is discharged from the processing liquid nozzle 111D toward the center (axis line P1) of the upper surface of the substrate W that is rotating. When the on-off valve 111C is opened, the processing liquid is sent from the processing liquid supply source 111A to the processing liquid nozzle 111D through the processing liquid pipe 111B.
於處理液之吐出開始時，臂驅動機構AM使刷子107及擺動臂109繞飛散防止杯5之外側之軸線P3旋轉移動，而使刷子107預先移動至基板W之上表面之中心(軸線P1)附近之上方。於使刷子107下降至基板W之上表面後，一邊對基板W之上表面供給處理液，一邊實施利用刷子107之刷洗洗淨。於洗淨中，臂驅動機構AM使刷子107自基板W之中心移動至基板W之邊端為止。再者，該移動亦可為往返移動。基於刷子107之上升及處理液供給之停止(關閉開閉閥111C)，刷洗洗淨結束。臂驅動機構AM使刷子107移動至待機位置。 At the beginning of the discharge of the processing liquid, the arm driving mechanism AM rotates the brush 107 and the swing arm 109 about the axis P3 on the outer side of the scattering prevention cup 5 to advance the brush 107 to the center of the upper surface of the substrate W (axis P1). Near above. After the brush 107 is lowered to the upper surface of the substrate W, the processing liquid is supplied to the upper surface of the substrate W, and the brush 107 is washed and washed. During cleaning, the arm drive mechanism AM moves the brush 107 from the center of the substrate W to the edge of the substrate W. Furthermore, the movement may be a round trip. As the brush 107 is raised and the processing liquid supply is stopped (the on-off valve 111C is closed), the brush washing is completed. The arm drive mechanism AM moves the brush 107 to a standby position.
於進行利用刷子107之刷洗洗淨(基板處理)之情形時，除了第1氣體吐出部65所進行之氣體吐出以外，亦自第2氣體吐出部81吐出氣體。第2氣體吐出部81自支撐銷13之附近對繞入之抑制效果會降低而處理液可能會繞入基板W之下表面之支撐銷13與基板W之邊端之接觸部分附近直接吐出氣體。因此，藉由準確地強化第1氣體吐出部65所吐出之氣體之流動，可改善處理液朝向基板W之下表面繞入之抑制效果。 In the case of brush cleaning (substrate processing) by the brush 107, in addition to the gas discharge by the first gas discharge portion 65, the gas is also discharged from the second gas discharge portion 81. The suppression effect of the second gas discharge portion 81 from the vicinity of the support pin 13 will be reduced, and the processing liquid may wrap around the contact portion between the support pin 13 on the lower surface of the substrate W and the edge of the substrate W to directly spit out gas. Therefore, by accurately intensifying the flow of the gas discharged from the first gas discharge portion 65, the effect of suppressing the processing liquid from entering the lower surface of the substrate W can be improved.
於刷洗洗淨後，藉由未圖示之噴嘴，朝向進行旋轉之基板W之上表面之中心(軸線P1)實施供給純水之後沖洗處理。該 處理係不進行刷子107之動作而進行。於後沖洗處理後，旋轉驅動機構3使基板W以較刷洗洗淨時更快之旋轉速度進行旋轉，而使基板W乾燥。於乾燥後，旋轉驅動機構3使基板W之旋轉停止。其後，關閉開閉閥77C、92C，停止第1氣體吐出部65及第2氣體吐出部81所進行氣體之吐出。 After brushing and washing, a nozzle (not shown) is applied to the center (axis line P1) of the upper surface of the rotating substrate W to perform pure water supply, followed by rinsing. This processing is performed without the operation of the brush 107. After the post-rinsing process, the rotation driving mechanism 3 rotates the substrate W at a faster rotation speed than when the brush is washed, thereby drying the substrate W. After drying, the rotation driving mechanism 3 stops the rotation of the substrate W. After that, the on-off valves 77C and 92C are closed, and the discharge of the gas by the first gas discharge portion 65 and the second gas discharge portion 81 is stopped.
於氣體之吐出停止後，杯升降機構CM使飛散防止杯5自上位置下降至下位置。此時，杯側永久磁鐵103亦下降，一邊解除6根支撐銷13對基板W之保持，一邊使保護盤33下降至旋轉基座11上之待機位置。若飛散防止杯5位於下位置，銷驅動用永久磁鐵31便取代掉杯側永久磁鐵103，而承受解除用永久磁鐵105之磁力。然後，銷驅動用永久磁鐵31與解除用永久磁鐵105藉由各自之磁力互斥或相吸，使可動支撐銷25被維持在開放位置。其後，未圖示之基板搬送機構之手HD進入基板W與保護盤33之間，將基板W加以保持並搬送至其他裝置等。 After the gas discharge is stopped, the cup lifting mechanism CM lowers the scattering prevention cup 5 from the upper position to the lower position. At this time, the cup-side permanent magnet 103 is also lowered, and the protection disk 33 is lowered to the standby position on the rotary base 11 while the substrate W is held by the six support pins 13. When the scattering prevention cup 5 is located at the lower position, the pin-driving permanent magnet 31 replaces the cup-side permanent magnet 103 and receives the magnetic force of the releasing permanent magnet 105. Then, the permanent magnet 31 for driving the pin and the permanent magnet 105 for cancellation are mutually exclusive or attracted by their respective magnetic forces, so that the movable support pin 25 is maintained in the open position. Thereafter, the hand HD of a substrate transfer mechanism (not shown) enters between the substrate W and the protective disk 33, and holds and transfers the substrate W to another device or the like.
根據本實施例，於以俯視觀察由旋轉夾頭2所保持之基板W時，第2氣體吐出部81係設置於較繞軸線P1所立設之6根支撐銷13更靠軸線P1側且基板W外周側。除了第1氣體吐出部65所進行氣體之吐出以外，第2氣體吐出部81對6根支撐銷13之各者與基板W之邊端之接觸部分附近吐出氣體。亦即，第2氣體吐出部81自支撐銷13之附近對繞入之抑制效果會降低而處理液可能會繞入基板W之下表面之支撐銷13與基板W之邊端之接觸部分附近直接吐出直接吐出氣體。因此，藉由準確地強化第1氣體吐出部65所吐出之氣體之流動，可改善處理液朝向基板W之下表面繞入之抑制效果。 According to the present embodiment, when the substrate W held by the rotary chuck 2 is viewed in a plan view, the second gas discharge portion 81 is disposed closer to the axis P1 side than the six support pins 13 standing around the axis P1 and the substrate. W outer peripheral side. Except for the gas discharged by the first gas discharge portion 65, the second gas discharge portion 81 discharges gas near the contact portion between each of the six support pins 13 and the edge of the substrate W. That is, the suppression effect of the second gas discharge portion 81 from the vicinity of the support pin 13 is reduced, and the processing liquid may wrap around the contact portion between the support pin 13 on the lower surface of the substrate W and the edge of the substrate W directly. Spit out the gas directly. Therefore, by accurately intensifying the flow of the gas discharged from the first gas discharge portion 65, the effect of suppressing the processing liquid from entering the lower surface of the substrate W can be improved.
又，第2氣體吐出部81呈繞軸線P1之環狀，且具有被形成為沿著該環CR之外周呈長形且遍及環CR之大致全周之1個狹縫狀之第2吐出口83。藉此，第2氣體吐出部81可對包含支撐銷13與基板W之邊端之接觸部分之基板W下表面之邊端附近之大致全周吐出氣體。因此，可改善處理液朝向基板W之下表面之外周側之大致全周繞入之抑制效果。 In addition, the second gas discharge portion 81 has a ring shape around the axis P1, and has a slit-shaped second discharge port that is elongated along the outer periphery of the ring CR and extends substantially over the entire circumference of the ring CR. 83. Thereby, the second gas discharge portion 81 can discharge the gas over substantially the entire periphery of the vicinity of the edge end of the lower surface of the substrate W including the contact portion between the support pin 13 and the edge end of the substrate W. Therefore, it is possible to improve the effect of suppressing the winding of the processing liquid toward substantially the entire periphery of the outer peripheral side of the lower surface of the substrate W.
又，基板處理裝置1進一步而具備有被設置為可於旋轉基座11與基板W之間進行升降之保護盤33、及於進行基板處理之情形時使保護盤33上升之杯升降機構CM。第1氣體吐出部65以氣體自基板W之中心側朝向基板W之外周側而流動於基板W與保護盤33之間之方式對基板W之下表面吐出氣體。第2氣體吐出部81係設置於保護盤33，氣體通過在保護盤33之內部所設置之空間SP1被供給至第2氣體吐出部81。 Furthermore, the substrate processing apparatus 1 further includes a protection plate 33 provided to be able to be raised and lowered between the rotary base 11 and the substrate W, and a cup lifting mechanism CM to raise the protection plate 33 when the substrate is processed. The first gas discharge portion 65 discharges gas to the lower surface of the substrate W so that the gas flows from the center side of the substrate W toward the outer peripheral side of the substrate W between the substrate W and the protective disk 33. The second gas discharge portion 81 is provided in the protection plate 33, and the gas is supplied to the second gas discharge portion 81 through a space SP1 provided inside the protection plate 33.
藉此，可通過在保護盤33之內部所設置之空間SP1將空氣供給至被設置在可進行升降之保護盤33之第2氣體吐出部81。 Thereby, the space SP1 provided inside the protection plate 33 can supply air to the 2nd gas discharge part 81 provided in the protection plate 33 which can be raised and lowered.
其次，參照圖式對本發明之實施例2進行說明。再者，省略與實施例1重複之說明。圖6係基板處理裝置之旋轉夾頭與其周邊構成之概略構成圖。圖7係顯示第2氣體吐出部81與其流路之縱剖視圖。 Next, a second embodiment of the present invention will be described with reference to the drawings. It should be noted that the description overlapping with the first embodiment is omitted. FIG. 6 is a schematic configuration diagram of a rotation chuck and its surroundings of a substrate processing apparatus. FIG. 7 is a vertical sectional view showing the second gas discharge portion 81 and its flow path.
在實施例1中，氣體通過在保護盤33之內部所設置之空間SP1被供給至第2氣體吐出部81。此部分，氣體通過在保 護盤122與氣體導引板124之間所形成之空間SP2被供給至第2氣體吐出部120。具體地進行說明。 In the first embodiment, the gas is supplied to the second gas discharge portion 81 through a space SP1 provided inside the protective plate 33. In this portion, the gas is supplied to the second gas discharge portion 120 through a space SP2 formed between the protective plate 122 and the gas guide plate 124. Specific description will be made.
基板處理裝置1具備有保護盤122與氣體導引板124。保護盤122相當於本發明之保護板。保護盤122係圓板狀之構件。保護盤122係設置為可於旋轉基座11與由旋轉夾頭2所保持之基板W之間進行升降。再者，保護盤122不如實施例1般在內部具備用以輸送氣體之空間SP1。 The substrate processing apparatus 1 includes a protective disk 122 and a gas guide plate 124. The protective plate 122 corresponds to a protective plate of the present invention. The protection plate 122 is a disc-shaped member. The protection plate 122 is provided to be able to be raised and lowered between the rotation base 11 and the substrate W held by the rotation chuck 2. Furthermore, the protective disk 122 does not include a space SP1 for transporting gas therein, as in the first embodiment.
氣體導引板124係設置於保護盤122與旋轉基座11之間。氣體導引板124係設置為可獨立於保護盤122地進行升降。保護盤122與氣體導引板124於該等之間形成空間SP2。氣體導引板124係構成為直徑較保護盤122更大。保護盤122形成空間SP2之頂壁面US。氣體導引板124形成空間SP2之底面BS與基板W外周側之側面GS。又，後述之連通口143等形成基板W之中心側之側面TS。 The gas guide plate 124 is disposed between the protection plate 122 and the rotation base 11. The gas guide plate 124 is provided so as to be able to be raised and lowered independently of the protection plate 122. The protective disc 122 and the gas guide plate 124 form a space SP2 therebetween. The gas guide plate 124 is configured to have a larger diameter than the protective disc 122. The protection plate 122 forms a top wall surface US of the space SP2. The gas guide plate 124 forms a bottom surface BS of the space SP2 and a side surface GS on the outer peripheral side of the substrate W. Further, a communication port 143 and the like described later form a side surface TS on the center side of the substrate W.
再者，側面GS呈傾斜，且例如成為若將側面GS朝向基板W之下表面延長，便會通過基板W之邊端附近。又，氣體導引板124之周緣部124A係形成為沿著保護盤122之上表面水平地延伸。相對於此，周緣部124A亦可被構成為不水平地延伸，而於基板W之外周側朝斜上延伸。 Further, the side surface GS is inclined, and for example, if the side surface GS is extended toward the lower surface of the substrate W, it passes through the vicinity of the edge end of the substrate W. The peripheral edge portion 124A of the gas guide plate 124 is formed to extend horizontally along the upper surface of the protective plate 122. In contrast, the peripheral edge portion 124A may be configured not to extend horizontally, but to extend diagonally upward from the outer peripheral side of the substrate W.
與圖2所示之第2吐出口83同樣地，第2氣體吐出部120具備有狹縫狀之第2吐出口126。狹縫狀之第2吐出口126係由保護盤122與氣體導引板124之間隙GP所形成。 Similarly to the second discharge port 83 shown in FIG. 2, the second gas discharge unit 120 is provided with a slit-shaped second discharge port 126. The slit-shaped second outlet 126 is formed by a gap GP between the protective disk 122 and the gas guide plate 124.
其次，對氣體導引板124之升降驅動進行說明。氣體導引板124與保護盤122獨立地進行升降。如圖6所示，於氣體導 引板124之下表面設置有第2磁鐵保持下垂片128。於第2磁鐵保持下垂片128埋設有將磁極方向朝向上下方向之導引板用永久磁鐵129。於旋轉基座11設置有用以供第2磁鐵保持下垂片128通過之6個開口部131。又，於氣體導引板124設置有用以供被設在保護盤122之下表面之磁鐵保持下垂片41通過之6個開口部133。 Next, the lift driving of the gas guide plate 124 will be described. The gas guide plate 124 is raised and lowered independently of the protection plate 122. As shown in Fig. 6, a second magnet holding pendant piece 128 is provided on the lower surface of the gas guide plate 124. A permanent magnet 129 for a guide plate is provided in the second magnet holding pendant piece 128 so that the direction of the magnetic poles is directed upward and downward. The rotation base 11 is provided with six opening portions 131 through which the second magnet holds the pendant piece 128. The gas guide plate 124 is provided with six openings 133 through which the magnet holding pendant 41 provided on the lower surface of the protection plate 122 passes.
本實施例之基板處理裝置1具備有升降構件135與導引板升降機構GM。於升降構件135埋設有升降用永久磁鐵136。導引板升降機構GM具備有電動馬達等，藉由使升降用永久磁鐵136(升降構件135)升降，而將氣體導引板124加以驅動。導引板升降機構GM相當於本發明之升降機構。移動導引部45之限制銷49貫通旋轉基座11及氣體導引板124而被連結至保護盤122之下表面。再者，升降用永久磁鐵136亦可被形成為以軸線P1為中心之環狀。 The substrate processing apparatus 1 of this embodiment includes a lifting member 135 and a guide plate lifting mechanism GM. A permanent magnet 136 for lifting is buried in the lifting member 135. The guide plate elevating mechanism GM is provided with an electric motor or the like, and drives the gas guide plate 124 by elevating the elevating permanent magnet 136 (elevating member 135). The guide plate lifting mechanism GM is equivalent to the lifting mechanism of the present invention. The restriction pin 49 of the movement guide portion 45 passes through the rotation base 11 and the gas guide plate 124 and is connected to the lower surface of the protection plate 122. The permanent magnets 136 for lifting may be formed in a ring shape with the axis P1 as the center.
其次，對氣體朝向第2氣體吐出部120之供給路徑進行說明。如圖7所示，支柱15與前端保持部55形成第2氣體流路141及連通口143。通過氣體供給外側管53所輸送之氣體，係通過第2氣體流路141而自連通口143被輸送至空間SP2。 Next, a supply path of the gas to the second gas discharge unit 120 will be described. As shown in FIG. 7, the pillar 15 and the tip holding portion 55 form a second gas flow path 141 and a communication port 143. The gas sent through the gas supply outer pipe 53 is sent from the communication port 143 to the space SP2 through the second gas flow path 141.
其次，關於基板處理裝置1之動作，對與本實施例有關之部分進行說明。於圖6中，杯升降機構CM使飛散防止杯5自下位置上升至上位置。若飛散防止杯5上升，便藉由杯側永久磁鐵103之磁力，而由6根支撐銷13來保持基板W，而且，使保護盤122上升至處理位置。又，此時，導引板升降機構GM使升降用永久磁鐵136進行升降，而對氣體導引板124之上下方向之位置進行調整。 Next, the operation of the substrate processing apparatus 1 will be described in relation to this embodiment. In FIG. 6, the cup lifting mechanism CM raises the scattering prevention cup 5 from a lower position to an upper position. When the scattering prevention cup 5 is raised, the substrate W is held by the six support pins 13 by the magnetic force of the cup-side permanent magnet 103, and the protection disc 122 is raised to the processing position. At this time, the guide plate elevating mechanism GM raises and lowers the permanent magnet 136 for elevation, and adjusts the position of the gas guide plate 124 in the up-down direction.
亦即，若藉由導引板升降機構GM使升降用永久磁鐵136上升，升降用永久磁鐵136與氣體導引板124之導引板用永久磁鐵129會互斥，導引板用永久磁鐵129便會與升降用永久磁鐵136之上升也一起上升。狹縫狀之第2吐出口126係由保護盤122與氣體導引板124之間之間隙GP所形成。狹縫狀之第2吐出口126係藉由杯升降機構CM及導引板升降機構GM，而以間隙GP成為所預先設定之寬度之方式被調整。 That is, if the lifting permanent magnet 136 is raised by the guide plate lifting mechanism GM, the lifting permanent magnet 136 and the guide plate permanent magnet 129 of the gas guide plate 124 are mutually exclusive, and the guide plate permanent magnet 129 It rises with the rise of the lifting permanent magnet 136. The slit-shaped second outlet 126 is formed by a gap GP between the protective disk 122 and the gas guide plate 124. The slit-shaped second outlet 126 is adjusted by the cup elevating mechanism CM and the guide plate elevating mechanism GM so that the gap GP becomes a predetermined width.
於圖7中，第1氣體吐出部65吐出氣體。被輸送至氣體供給外側管53之氣體依照由支柱15、前端保持部55及下部吐出構件67所形成之第2氣體流路141、連通口143、空間SP2之順序被輸送，而自狹縫狀之第2吐出口126被吐出。 In FIG. 7, the first gas discharge unit 65 discharges a gas. The gas delivered to the gas supply outer pipe 53 is delivered in the order of the second gas flow path 141, the communication port 143, and the space SP2 formed by the pillar 15, the front-end holding portion 55, and the lower discharge member 67, and is formed in a slit shape The second outlet 126 is discharged.
根據本實施例，基板處理裝置1具備有被設為可於旋轉基座11與基板W之間進行升降之保護盤122、及被設為可於保護盤122與旋轉基座11之間進行升降之氣體導引板124。第1氣體吐出部65以氣體自基板W中心側朝向基板W之外周側而流動於基板W與保護盤122之間之方式對基板W之下表面吐出氣體。第2氣體吐出部120具有由保護盤122與氣體導引板124之間之間隙GP所形成之第2吐出口126，且氣體通過在保護盤122與氣體導引板124之間所形成之空間SP2被供給至第2氣體吐出部120。杯升降機構CM及導引板升降機構GM於進行基板處理之情形時使保護盤122及氣體導引板124上升。 According to the present embodiment, the substrate processing apparatus 1 includes a protection plate 122 provided to be capable of lifting between the rotation base 11 and the substrate W, and a protection plate 122 provided to be capable of lifting between the protection disk 122 and the rotation base 11.之 gas guide plate 124. The first gas discharge portion 65 discharges gas onto the lower surface of the substrate W so that the gas flows from the center side of the substrate W toward the outer peripheral side of the substrate W between the substrate W and the protective disk 122. The second gas discharge portion 120 has a second discharge port 126 formed by a gap GP between the protective plate 122 and the gas guide plate 124, and the gas passes through a space formed between the protective plate 122 and the gas guide plate 124 SP2 is supplied to the second gas discharge unit 120. The cup lifting mechanism CM and the guide plate lifting mechanism GM raise the protective disk 122 and the gas guide plate 124 when performing substrate processing.
藉此，可通過在保護盤122與氣體導引板124之間所形成之空間SP2，對具有由可進行升降之保護盤122與氣體導引板124之間之間隙GP所形成之第2吐出口126之第2氣體吐出部120 供給氣體。 Thereby, the space SP2 formed between the protection plate 122 and the gas guide plate 124 can be used for the second spit formed by the gap GP between the protection plate 122 and the gas guide plate 124 that can be raised and lowered The second gas outlet 120 of the outlet 126 supplies a gas.
又，氣體導引板124可相對於保護盤122獨立地進行升降。杯升降機構CM及導引板升降機構GM於進行基板處理之情形時個別地使保護盤122及氣體導引板124上升，並且對形成第2吐出口126之間隙GP之寬度進行調整(參照圖7以圓圈所包圍之圖)。杯升降機構CM及導引板升降機構GM藉由對形成第2吐出口126之間隙GP之寬度進行調整，例如可調整由第2氣體吐出部120所吐出氣體之流速。 In addition, the gas guide plate 124 can be raised and lowered independently from the protection plate 122. The cup lifting mechanism CM and the guide plate lifting mechanism GM individually raise the protective disk 122 and the gas guide plate 124 when performing substrate processing, and adjust the width of the gap GP forming the second discharge port 126 (refer to the figure) 7 The figure surrounded by circles). The cup elevating mechanism CM and the guide plate elevating mechanism GM can adjust the width of the gap GP forming the second outlet 126, for example, the flow velocity of the gas discharged from the second gas outlet 120 can be adjusted.
其次，參照圖式對本發明之實施例3進行說明。再者，省略與實施例1及2重複之說明。圖8係顯示第2氣體吐出部150與其流路之縱剖視圖。 Next, a third embodiment of the present invention will be described with reference to the drawings. Note that descriptions that overlap with the first and second embodiments are omitted. FIG. 8 is a longitudinal sectional view showing the second gas discharge portion 150 and its flow path.
於實施例1中，第2氣體吐出部81(第2吐出口83)係設置於保護盤33，且氣體通過在保護盤33之內部所設置之空間SP1被供給至第2氣體吐出部81。此部分，在實施例3中，並未設置保護盤33。第2氣體吐出部150(第2吐出口151)係設置於旋轉基座153，且氣體通過在旋轉基座153之內部所設置之空間SP3被供給至第2氣體吐出部150。 In the first embodiment, the second gas discharge portion 81 (the second discharge outlet 83) is provided on the protection plate 33, and the gas is supplied to the second gas discharge portion 81 through the space SP1 provided inside the protection plate 33. In this part, in Embodiment 3, the protection disk 33 is not provided. The second gas discharge portion 150 (the second discharge port 151) is provided on the rotation base 153, and the gas is supplied to the second gas discharge portion 150 through a space SP3 provided inside the rotation base 153.
參照圖8。第2氣體吐出部150具備有第2吐出口151。於本實施例之旋轉基座153之上表面設置有第2氣體吐出部150、即第2吐出口151。於旋轉基座153之內部設置有用以供氣體流動之空間SP3。與空間SP3連通之第2氣體流路155例如由支柱15、前端保持部55與下部吐出構件67所形成。自氣體供給外側管 53所輸送之氣體係通過第2氣體流路155被輸送至空間SP3，而自第2吐出口151被吐出。 Refer to Figure 8. The second gas discharge unit 150 includes a second discharge port 151. A second gas outlet 150, that is, a second outlet 151 is provided on the upper surface of the rotating base 153 in this embodiment. A space SP3 for gas flow is provided inside the rotating base 153. The second gas flow path 155 that communicates with the space SP3 is formed by, for example, the stay 15, the tip holding portion 55, and the lower discharge member 67. The gas system conveyed from the gas supply outer pipe 53 is conveyed to the space SP3 through the second gas flow path 155, and is discharged from the second discharge port 151.
根據本實施例，可通過在旋轉基座11之內部所設置之空間SP3，對被設置於旋轉基座153之第2氣體吐出部150供給氣體。 According to this embodiment, the space SP3 provided inside the rotary base 11 can supply the gas to the second gas outlet 150 provided in the rotary base 153.
本發明並不限定於上述實施形態，而可實施如下述之變形。 The present invention is not limited to the above-mentioned embodiment, but can be modified as described below.
(1)在上述之各實施例中，例如，狹縫狀之第2吐出口83係構成為分別與6根支撐銷13對向之部分83A之狹縫寬度HB1，較對向之部分83A以外之部分83B之狹縫寬度HB2更寬。此部分，如圖9所示，狹縫狀之第2吐出口160亦可遍及環CR之大致全周以相同之狹縫寬度所形成。藉此，可朝大致全方向均等地吐出氣體。再者，於圖9~圖11中，對保護盤33標示陰影線而加以表示，而保護盤33中之第2吐出口160等並未標示陰影線。 (1) In each of the above-mentioned embodiments, for example, the slit-shaped second outlet 83 is configured to have a slit width HB1 of a portion 83A facing the six support pins 13 respectively, which is larger than the portion 83A facing the other The slit width HB2 of the portion 83B is wider. In this part, as shown in FIG. 9, the slit-shaped second outlet 160 may be formed with the same slit width over the entire circumference of the ring CR. Thereby, gas can be discharged uniformly in almost all directions. In addition, in FIG. 9 to FIG. 11, the protection disk 33 is indicated by hatching, and the second outlet 160 and the like in the protection disk 33 are not indicated by hatching.
(2)於上述之各實施例及變形例(1)中，狹縫狀之1個第2吐出口83、126、151係形成為環狀。此部分，根據狹縫狀之複數個第2吐出口，亦可被形成為繞軸線P1之環狀。例如，亦可於圖10中，以支撐銷13與第2吐出口162成為1對1之關係之方式，而由狹縫狀之6個第2吐出口162來形成為環狀。藉此，狹縫狀之第2吐出口162可對包含支撐銷13與基板W之邊端之接觸部分之基板W之下表面之邊端附近廣範圍地吐出氣體。再者，與支撐銷13對應之部分以符號162A來表示，而以符號162B來表示對應之部分162A以外之部分。 (2) In each of the above-mentioned embodiments and modification examples (1), the slit-shaped second outlets 83, 126, and 151 are formed in a ring shape. This portion may be formed in a ring shape around the axis P1 according to the plurality of slit-shaped second discharge ports. For example, in FIG. 10, the support pin 13 and the second discharge port 162 may have a one-to-one relationship, and six second discharge ports 162 in a slit shape may be formed in a ring shape. Thereby, the slit-shaped second discharge port 162 can widely discharge gas near the edge end of the lower surface of the substrate W including the contact portion between the support pin 13 and the edge end of the substrate W. In addition, a portion corresponding to the support pin 13 is represented by a symbol 162A, and a portion other than the corresponding portion 162A is represented by a symbol 162B.
又，於圖10中，雖藉由狹縫狀之6個第2吐出口162 被形成為環狀，但亦可如以下來構成。亦即，亦可藉由大致半圓之狹縫狀之2個第2吐出口而被形成為環狀。又，亦可藉由大致1/4圓之狹縫狀之4個第2吐出口而被形成為環狀。再者，於該等情形時，各第2吐出口係配置為與支撐銷13對向。 In FIG. 10, the six second discharge ports 162 in the shape of slits are formed in a ring shape, but they may be configured as follows. That is, it may be formed in a ring shape by the two semi-circular slit-shaped two second discharge ports. Moreover, it may be formed in the shape of a ring by four slit-shaped second outlets having a substantially 1/4 circle shape. In these cases, the second outlets are arranged to face the support pin 13.
(3)上述之各實施例，第2吐出口83、126、151呈狹縫狀。此部分，亦可如圖11所示，第2吐出口164並非呈狹縫狀，而例如被形成為正方形、多邊形、圓形、及橢圓形。於該情形時，被構成為支撐銷與第2吐出口成為1對1之關係。再者，吐出口162(或上述之吐出口164)係構成為藉由旋轉驅動機構3而與支撐銷13一起繞軸線P1旋轉。藉此，可維持支撐銷13與第2吐出口164(或上述之吐出口164)之相對位置。 (3) In each of the above embodiments, the second outlets 83, 126, and 151 are slit-shaped. In this part, as shown in FIG. 11, the second discharge port 164 does not have a slit shape, but is formed into a square, a polygon, a circle, and an oval, for example. In this case, the support pin and the second outlet are configured to have a one-to-one relationship. The discharge port 162 (or the above-mentioned discharge port 164) is configured to rotate about the axis P1 together with the support pin 13 by the rotation driving mechanism 3. Thereby, the relative position of the support pin 13 and the 2nd discharge port 164 (or the said discharge port 164) can be maintained.
(4)於上述之各實施例及各變形例中，相當於本發明之處理部之處理機構7及處理液供給機構9，自處理液噴嘴111D對基板W之上表面供給處理液，而進行利用刷子107之刷洗處理。然而，基板處理並不限定於如此之處理。 (4) In each of the above-mentioned embodiments and modifications, the processing mechanism 7 and the processing liquid supply mechanism 9 corresponding to the processing unit of the present invention supply the processing liquid from the processing liquid nozzle 111D to the upper surface of the substrate W and perform The brush 107 is used for brushing. However, substrate processing is not limited to such processing.
於圖1中，在擺動臂109之前端安裝有刷子107。亦可取代該刷子107而安裝雙流體噴嘴。亦即，該變形例之處理機構(未圖示)具備有雙流體噴嘴(未圖示)、擺動臂109、及臂驅動機構AM。又，被構成為來自處理液供給機構9之處理液、及來自惰性氣體供給源(未圖示)之惰性氣體被供給至雙流體噴嘴。控制部113分別操縱用於處理液供給之開閉閥、及用於惰性氣體供給之開閉閥，而自雙流體噴嘴將處理液與惰性氣體一起噴射。亦即，將處理液與惰性氣體混合而生成氣液混合流體，並將所生成之氣液混合流體加以噴射(噴霧)。 In FIG. 1, a brush 107 is attached to the front end of the swing arm 109. Instead of the brush 107, a two-fluid nozzle may be attached. That is, the processing mechanism (not shown) of this modification includes a two-fluid nozzle (not shown), a swing arm 109, and an arm drive mechanism AM. In addition, a processing liquid from the processing liquid supply mechanism 9 and an inert gas from an inert gas supply source (not shown) are supplied to the two-fluid nozzle. The control unit 113 operates the on-off valve for supplying the processing liquid and the on-off valve for supplying the inert gas, and sprays the processing liquid together with the inert gas from the two-fluid nozzle. That is, the processing liquid and the inert gas are mixed to generate a gas-liquid mixed fluid, and the generated gas-liquid mixed fluid is sprayed (sprayed).
於使用雙流體噴嘴進行基板處理之情形時，較佳係如圖2、9、10所示，第2氣體吐出部81呈繞軸線P1之環狀，且具有被形成為沿著該環CR之外周呈長形之至少1個狹縫狀之第2吐出口83、126、151。 In the case of using a two-fluid nozzle for substrate processing, as shown in FIGS. 2, 9, and 10, the second gas discharge portion 81 preferably has a ring shape around the axis P1 and has a shape formed along the ring CR. At least one slit-shaped second discharge port 83, 126, 151 is formed on the outer periphery.
於利用雙流體噴嘴之洗淨中，處理液會繞入基板W之下表面之外周側之全周，使處理液附著於基板W之下表面。藉此，於基板W下表面之外周側之全周產生環狀之微粒。與上述之支撐銷13之影響不同地，其原因可能在於相較於利用刷子107之刷洗洗淨，處理液霧氣之量較多。本發明之狹縫狀之第2吐出口83等例如可對包含支撐銷13與基板W之邊端之接觸部分之基板W之下表面之邊端附近廣範圍地吐出氣體。因此，可改善處理液朝向基板W下表面之外周側之全周繞入之抑制效果。 In the cleaning using the two-fluid nozzle, the processing liquid is wound around the entire periphery of the outer peripheral side of the lower surface of the substrate W, so that the processing liquid adheres to the lower surface of the substrate W. Thereby, ring-shaped fine particles are generated on the entire periphery of the outer peripheral side of the lower surface of the substrate W. Different from the influence of the support pin 13 described above, the reason may be that the amount of the mist of the treatment liquid is larger than that of the cleaning and washing with the brush 107. The slit-shaped second discharge port 83 of the present invention can, for example, discharge a wide range of gas to the vicinity of the edge end of the lower surface of the substrate W including the portion where the support pin 13 contacts the edge end of the substrate W. Therefore, it is possible to improve the effect of suppressing the entrapment of the processing liquid toward the entire periphery of the outer peripheral side of the lower surface of the substrate W.
(5)在上述之各實施例及各變形例中，例如如圖3所示，第2氣體吐出部81之第2吐出口83係直接設置於保護盤33。此部分，亦可如圖12所示，為了導引氣體，第2吐出口83係經由自保護盤33突出之導引構件166被設置在保護盤33。於該情形時，第2氣體吐出部81具備有第2吐出口83與導引構件166。 (5) In each of the above embodiments and modifications, for example, as shown in FIG. 3, the second outlet 83 of the second gas outlet 81 is directly provided on the protection plate 33. In this part, as shown in FIG. 12, in order to guide the gas, the second outlet port 83 is provided on the protection plate 33 via a guide member 166 protruding from the protection plate 33. In this case, the second gas discharge portion 81 includes a second discharge port 83 and a guide member 166.
(6)在上述之實施例1中，於保護盤33設置有導引部85，於支柱15設置有導引溝89。此部分，亦可如圖7、圖8所示，為未設置有導引部85及導引溝89之構成。 (6) In the first embodiment described above, the protection disc 33 is provided with the guide portion 85, and the pillar 15 is provided with the guide groove 89. This part may have a configuration in which the guide portion 85 and the guide groove 89 are not provided, as shown in FIGS. 7 and 8.
(7)於上述之各實施例及各變形例中，圖1等所示之旋轉夾頭2亦可為上下顛倒者。於該情形時，在對基板W之下表面進行基板處理時，可抑制處理液繞入與保護盤33對向之基板W之上表面之情形。 (7) In each of the embodiments and modifications described above, the rotary chuck 2 shown in FIG. 1 and the like may be turned upside down. In this case, when substrate processing is performed on the lower surface of the substrate W, it is possible to prevent the processing liquid from entering the upper surface of the substrate W facing the protection disk 33.
(8)於上述之各實施例及各變形例中，如圖1等所示，雖設置有第1氣體吐出部65，但亦可省略第1氣體吐出部65及用於對第1氣體吐出部65輸送氣體之構成。於該情形時，第2氣體吐出部81相當於本發明之氣體吐出部。 (8) In each of the above embodiments and modifications, as shown in FIG. 1 and the like, although the first gas discharge portion 65 is provided, the first gas discharge portion 65 and the first gas discharge portion 65 may be omitted. The structure of the part 65 conveying gas. In this case, the second gas discharge portion 81 corresponds to the gas discharge portion of the present invention.
根據本變形例，第2氣體吐出部81、120、150呈繞軸線P1之環狀，且具有被形成為沿著該環CR之外周呈長形之至少1個狹縫狀之第2吐出口83、126、151、160、162。又，於以俯視觀察由旋轉夾頭2所保持之基板W時，第2氣體吐出部81、120、150係設置於較繞軸線P1被立設之6根支撐銷13更靠軸線P1側且基板W之外周側。第2氣體吐出部81等可對包含6根支撐銷13之各者與基板W之邊端之接觸部分附近之基板W之下表面之邊端附近廣範圍地吐出氣體。再者，6根支撐銷13之各者與基板W之邊端之接觸部分附近，係處理液可能容易繞入基板W之下表面之部分。亦即，第2氣體吐出部81等自支撐銷13之附近準確地對基板W之下表面之邊端附近吐出氣體。因此，可改善處理液朝向基板W之下表面之外周側之全周繞入之抑制效果。 According to this modification, the second gas discharge portions 81, 120, and 150 have a ring shape around the axis P1, and have a second discharge port formed in at least one slit shape elongated along the outer periphery of the ring CR. 83, 126, 151, 160, 162. In addition, when the substrate W held by the rotary chuck 2 is viewed in a plan view, the second gas discharge portions 81, 120, and 150 are provided closer to the axis P1 than the six support pins 13 which are erected around the axis P1. The outer peripheral side of the substrate W. The second gas discharge portion 81 and the like can widely discharge gas near the edge end of the lower surface of the substrate W in the vicinity of the contact portion between each of the six support pins 13 and the edge end of the substrate W. Furthermore, in the vicinity of the contact portion between each of the six support pins 13 and the edge of the substrate W, the processing liquid may easily enter the portion of the lower surface of the substrate W. That is, the vicinity of the self-supporting pin 13 such as the second gas discharge portion 81 accurately discharges gas near the edge end of the lower surface of the substrate W. Therefore, it is possible to improve the effect of suppressing the entrapment of the processing liquid toward the entire periphery of the outer peripheral side of the lower surface of the substrate W.
再者，設為存在有如下之情形：第2氣體吐出部81等呈繞軸線P1之環狀，且具有被形成為沿著該環之外周呈長形且遍及該環之全周之1個狹縫狀之第2吐出口83、126、151。於該情形時，第2氣體吐出部81等可對包含6根支撐銷13之各者與基板W之邊端之接觸部分附近之基板W之下表面之邊端附近之全周吐出氣體。 In addition, it is assumed that the second gas discharge portion 81 and the like have a ring shape around the axis P1, and have a shape that is elongated along the outer periphery of the ring and extends throughout the entire circumference of the ring. The slit-like second outlets 83, 126, and 151. In this case, the second gas discharge portion 81 and the like can discharge gas to the entire periphery of the vicinity of the lower end of the lower surface of the substrate W near the contact portion of each of the six support pins 13 and the end of the substrate W.
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| JP2017105630A JP6899703B2 (en) | 2017-05-29 | 2017-05-29 | Substrate processing equipment and substrate processing method |
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| TWI824210B (en) * | 2019-12-19 | 2023-12-01 | 日商斯庫林集團股份有限公司 | Slit nozzle and substrate processing device |
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| JPH11289002A (en) * | 1998-04-03 | 1999-10-19 | Toshiba Microelectronics Corp | Single wafer processing mechanism |
| JP4601341B2 (en) * | 2004-07-02 | 2010-12-22 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| JP2012195346A (en) * | 2011-03-15 | 2012-10-11 | Renesas Electronics Corp | Wet processing apparatus and manufacturing method for wet processing apparatus |
| US9385020B2 (en) * | 2011-12-19 | 2016-07-05 | SCREEN Holdings Co., Ltd. | Substrate holding and rotating device, substrate treatment apparatus including the device, and substrate treatment method |
| US9589818B2 (en) * | 2012-12-20 | 2017-03-07 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles and liquid control ring for use in same |
| JP6562507B2 (en) * | 2015-09-28 | 2019-08-21 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate holding device and substrate processing apparatus having the same |
| JP6674679B2 (en) * | 2015-09-29 | 2020-04-01 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate holding / rotating apparatus, substrate processing apparatus having the same, and substrate processing method |
| JP6660628B2 (en) * | 2015-09-29 | 2020-03-11 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate holding / rotating apparatus, substrate processing apparatus having the same, and substrate processing method |
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| JP2018200977A (en) | 2018-12-20 |
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