TW201842590A - 具有真空隔離和預處理環境的高壓退火腔室 - Google Patents

具有真空隔離和預處理環境的高壓退火腔室 Download PDF

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TW201842590A
TW201842590A TW107113314A TW107113314A TW201842590A TW 201842590 A TW201842590 A TW 201842590A TW 107113314 A TW107113314 A TW 107113314A TW 107113314 A TW107113314 A TW 107113314A TW 201842590 A TW201842590 A TW 201842590A
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chamber
lifting plate
shell
substrate
batch process
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提蒙西喬瑟夫 富蘭克林
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美商應用材料股份有限公司
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Abstract

揭露內容的實施例大致關於用於填充基板上的縫隙與溝槽的方法與設備以及用於批次退火基板的工具。在一個實施例中，揭露的批次製程腔室包括下殼、通過下殼形成的基板移送埠、配置於下殼上的上殼、配置於上殼中的內殼、操作用來加熱內殼的加熱器、可移動地配置於下殼中的升降板、配置於升降板上且設以固持複數個基板於內腔室中的匣以及注入埠。內殼與上殼界定外腔室，而內殼與下殼界定部分地由外腔室所包圍的內腔室。注入埠設以引導流體進入內腔室中。

Description

具有真空隔離和預處理環境的高壓退火腔室
揭露內容的實施例大致關於用於填充基板上的縫隙與溝槽的方法與設備以及用於批次退火基板的工具。
自從幾十年前推出以來，半導體元件的幾何尺寸已經大大地縮小。增加的元件密度已經導致結構性特徵具有減小的空間尺寸。形成現代半導體元件的結構性特徵的縫隙和溝槽的深寬比（深度比上寬度的比例）已經縮小到以材料填充縫隙變得非常具有挑戰性的程度。造成此一挑戰的一個重要因素是在縫隙完全填滿之前，沉積在縫隙中的材料傾向於容易堵塞縫隙的開口處。
因此，需要一種用於填充基板上高深寬比縫隙與溝槽的改良設備和方法。
揭露內容的實施例大致關於用於填充基板上的縫隙與溝槽的方法與設備以及用於批次退火基板的工具。在一個實施例中揭露批次製程腔室。批次製程腔室包括下殼、通過下殼形成的基板移送埠、配置於下殼上的上殼、配置於上殼中的內殼、操作用來加熱內殼的加熱器、可移動地配置於下殼中的升降板、配置於升降板上且設以固持複數個基板於內腔室中的匣以及注入埠。內殼與上殼界定外腔室，而內殼與下殼界定與外腔室隔離的內腔室。注入埠設以引導流體進入內腔室中。
在揭露內容的另一實施例中揭露批次製程腔室。批次製程腔室包括下殼、通過下殼形成的基板移送埠、耦接至下殼的底表面的底板、配置於下殼上的上殼、配置於上殼中的內殼、由內殼與上殼所界定的外腔室、配置於外腔室中的一個或多個加熱器、可移動地配置於下殼中的升降板、耦接至升降板的加熱元件、配置於升降板上且設以固持複數個基板的匣、可移除地耦接至內殼的底表面的注入環、配置於注入環中的注入埠、設以耦接注入環至升降板的高壓密封件、配置鄰近高壓密封件的冷卻通道、通過注入環形成的一個或多個出口埠以及遠端電漿源。內殼界定了具有高壓區與低壓區的內腔室的一部分。外腔室隔離於內腔室。配置於外腔室中的一個或多個加熱器操作用來加熱內殼。升降板設以升高以密封高壓區，並降低以允許高壓區與低壓區之間的流體連通。配置於注入環中的注入埠設以引導流體進入內腔室。高壓密封件設以耦接注入環至高壓區中的升降板。一個或多個出口埠橫跨內腔室面對注入埠。遠端電漿源耦接至內腔室。
在揭露內容的又一實施例中，揭露處理配置於批次製程腔室中複數個基板的方法。方法包括以複數個基板裝載配置於升降板上的匣，其中匣與升降板配置於批次製程腔室的內腔室中以致具有可流動材料的複數個基板的至少一第一基板暴露於基板的外表面上，將匣提升到處理位置，處理位置將內腔室的高壓區中的匣與內腔室的低壓區隔離；並流動第一基板的外表面上暴露的可流動材料。在加壓高壓區至大於約50巴的壓力、加熱第一基板至大於約攝氏450度的溫度並暴露第一基板至處理流體時執行可流動材料的流動。
揭露內容的實施例大致關於用於填充基板上的縫隙與溝槽的方法與設備以及用於批次退火基板的工具，特別適合用來以可流動材料填充高深寬比縫隙與溝槽。
圖1係批次製程腔室的簡化正面橫剖面圖。批次製程腔室100具有配置於下殼114上的上殼112。內殼113配置於上殼112中以致形成外腔室110與內腔室120。內殼113與上殼112界定外腔室110。內殼113與下殼114界定內腔室120。外腔室110隔離於內腔室120。底板170耦接至下殼114的底表面。內腔室120具有高壓區115與低壓區117。上殼112與下殼114的外部可由耐腐蝕鋼(CRS)(例如但不限於不鏽鋼)所製成。內殼113、上殼112與下殼114的內部以及底板170可由表現出高度耐腐蝕性的鎳基鋼合金(例如但不限於HASTELLOY® )所製成。
一個或多個加熱器122配置於外腔室110中。如下面進一步討論的，將外腔室110中的環境維持在真空下以改善加熱器122的效能。在圖1中所示的實施例中，加熱器122耦接至內殼113。在其他實施例中，加熱器122可耦接至上殼112。加熱器122可操作使得當加熱器122開啟時，加熱器122能夠加熱內殼113並因此也加熱內腔室120中的高壓區115。加熱器122可為電阻線圈、燈、陶瓷加熱器、石墨基碳纖維複合材料(CFC)加熱器、不鏽鋼加熱器或鋁加熱器。藉由控制器180通過自監控內腔室120的溫度的感測器(未圖示)接收的反饋來控制到達加熱器122的電力。
升降板140配置於內腔室120中。升降板140藉由內腔室120的底板170上的一個或多個桿142所支撐。底板170耦接至平臺176，平臺176連接至升降機構178。在某些實施例中，升降機構178可為升降馬達或其他適當線性致動器。在圖1中所示的實施例中，波紋管172用以密封平臺176至底板170。波紋管172藉由固定機構(例如但不限於夾子)附接至底板170。因此，升降板140耦接至升降機構178，升降機構178升高與降低內腔室120中的升降板140。升降機構178升高升降板140以密封高壓區115。升降板140與升降機構178設以在升降板140處於升高位置時用來抵抗高壓(例如，約50巴的壓力)，所述壓力典型地在內腔室120的高壓區115中向下作用。升降機構178降低升降板140以允許高壓區115與低壓區117之間的流體連通，並促進基板移送進入與離開批次製程腔室100。藉由控制器180來控制升降機構178的操作。
加熱元件145與升降板140接合。加熱元件145在處理以及預處理過程中操作用來加熱內腔室120中的高壓區115。加熱元件145可為電阻線圈、燈或陶瓷加熱器。在圖1中所示的實施例中，加熱元件145係耦接至升降板140或配置於升降板140中的電阻式加熱器。藉由控制器180通過自監控內腔室120的溫度的感測器(未圖示)接收的反饋來控制到達加熱元件145的電力。
高壓密封件135用以密封升降板140至內殼113以密封高壓區115以進行處理。高壓密封件135可由聚合物(例如但不限於全氟彈性體)所製成。冷卻通道337 (圖3)配置鄰近高壓密封件135以在處理過程中維持高壓密封件135低於高壓密封件135的最大安全操作溫度下。冷卻劑(例如但不限於惰性、介電性與高效能熱傳送流體)可循環於冷卻通道337中以維持高壓密封件135在例如約攝氏250-275度之間的溫度下以避免高壓密封件135的降解。藉由控制器180通過自溫度與/或流動感測器(未圖示)接收的反饋來控制冷卻通道337中冷卻劑的流動。
批次製程腔室100包括至少一個注入埠134與一個或多個出口埠136。注入埠134設以引導流體進入內腔室120，而一個或多個出口埠136設以自內腔室120移除流體。注入埠134與一個或多個出口埠136橫跨內腔室120彼此面對以引起橫跨高壓區115中的基板的橫流。
在某些實施例中，內殼113可耦接至圖3中所示的注入環130，注入環130具有圍繞內腔室120的圓柱型環狀外形。注入環130可移除地耦接至內殼113的底表面。在圖3中所示的實施例中，注入埠134與一個或多個出口埠136形成於注入環130中。注入埠134包括形成通過注入埠134而到達注入環130的通道333。配件331耦接至通道333以促進透過入口管132耦接注入埠134至流體源131。噴嘴339在注入環130的內側壁上耦接至通道333的末端以提供處理流體至內腔室120。一個或多個出口埠136設以透過出口管138移除內腔室120中的任何流體。
注入環130藉由固定件340附接至內殼113。在某些實施例中，固定件340是穿過間隙孔342且嚙合注入環130中形成的螺紋孔的螺栓，而間隙孔342穿過內殼113而形成。
在圖3中所示的實施例中，高壓密封件135如上所述配置於升降板140與注入環130之間，以在升降板140被推靠注入環130而壓縮密封件135時，密封高壓區115以進行處理。冷卻通道337如上所述配置於注入環130中且鄰近高壓密封件135以隔離密封件135免於加熱內殼113與上殼112的加熱器122所產生的熱量。由於注入環130可藉由固定件340附接至內殼113，注入環130是一種獨特的部件，可以在處理之前單獨採購並附接至批次製程腔室100。以這種方式，可用具有不同組的注入埠134與出口埠136的不同注入環130替換注入環130，使得批次製程腔室100可以容易地以最小的花費和停機時間重新配置用於不同的製程。
匣150配置於升降板140上。匣150具有頂表面152、底表面154與壁153。匣150的壁153具有複數個基板儲存插槽156。各個基板儲存插槽156設以固持基板155於基板儲存插槽156中。各個基板儲存插槽156沿著匣150的壁153均勻地分散。舉例而言，在圖4中所示的實施例中，匣150圖示各自分別地固持基板155的三個基板儲存插槽156。匣150可具有多到二十四個或更多的基板儲存插槽。
通過下殼114形成的基板移送埠116用以裝載基板155至匣150上。基板移送埠116具有門160。門160設以在裝載基板155之前與之後覆蓋基板移送埠116。門160可由表現高度耐腐蝕性的鎳基鋼合金(例如但不限於HASTELLOY® )所製成，且可為水冷式。提供真空密封件162以密封門160與基板移送埠116，並因而避免在門160處於關閉位置時空氣滲漏進入內腔室120中。
圖5與6圖示處理批次製程腔室100中的基板155之前與之後基板155的一部分的橫剖面圖。基板155具有多個溝槽557。在批次製程腔室100中的處理之前，基板155具有沉積在溝槽557的側壁和底部兩者上以及基板155的頂部上的可流動材料558。如圖5中所示，可流動材料558可能不會完全填充溝槽557。可流動材料558可為介電材料，諸如碳化矽(SiC)、氧化矽(SiO)、碳氮化矽(SiCN)、二氧化矽(SiO2 )、氧碳化矽(SiOC)、碳氧氮化矽(SiOCN)、氧氮化矽(SiON)與/或氮化矽(SiN)。可使用高密度電漿CVD系統、電漿增強CVD系統與/或次大氣壓CVD系統等等其他系統來沉積可流動材料558。能夠形成可流動層的CVD系統的實例包括ULTIMA HDP CVD®系統與PRODUCER®系統上的ETERNA CVD®，兩者皆可自Applied Materials, Inc.(Santa Clara, Calif)取得。亦可使用來自其他製造商的其他相似設置的CVD系統。
在批次製程腔室100中基板155的處理過程中，處理流體(如箭號658所示)流動橫跨基板155以致可流動材料558如圖6中所示流動進入並填充溝槽557。處理流體可包括含氧與/或含氮氣體，諸如氧、蒸氣、水、過氧化氫與/或氨。替代地或除了含氧與/或含氮氣體以外，處理流體可包括含矽氣體。蒸氣可為例如乾蒸氣。在一個實施例中，蒸氣為過熱蒸氣。含矽氣體的實例包括有機矽、正矽酸四烷基酯氣體與二矽氧烷。有機矽氣體包括具有至少一個碳-矽鍵結的有機化合物的氣體。正矽酸四烷基酯氣體包括由四個烷基基團附接至SiO4 4− 離子所構成的氣體。更明確地，一個或多個氣體可為(二甲基矽基)(三甲基矽基)甲烷((Me)3 SiCH2 SiH(Me)2 )、六甲基二矽烷((Me)3 SiSi(Me)3 )、三甲基矽烷((Me)3 SiH)、氯化三甲基矽((Me)3 SiCl)、四甲基矽烷((Me)4 Si)、四乙氧基矽烷((EtO)4 Si)、四甲氧基矽烷((MeO)4 Si)、四(三甲基矽基)矽烷((Me3 Si)4 Si)、(二甲胺)二甲基-矽烷((Me2 N)SiHMe2 )、二甲基二乙氧基矽烷((EtO)2 Si(Me)2 )、二甲基-二甲氧基矽烷((MeO)2 Si(Me)2 )、甲基三甲氧基矽烷((MeO)3 Si(Me))、二甲氧基四甲基-二矽氧烷(((Me)2 Si(OMe))2 O)、三(二甲胺)矽烷((Me2 N)3 SiH)、二(二甲胺)甲基矽烷((Me2 N)2 CH3 SiH)、二矽氧烷((SiH3 )2 O)與上述之組合。
回到圖1，遠端電漿源(RPS) 190藉由入口195連接至內腔室120並設以產生氣態自由基，在處理一個或多個批次的基板155之後，氣態自由基流動通過入口195進入內腔室120以清潔內腔室120的內部。遠端電漿源190可為射頻(RF)或特高射頻(VHRF)電容耦合電漿(CCP)源、電感耦合電漿(ICP)源、微波誘導(MW)電漿源、DC輝光放電源、電子迴旋共振(ECR)腔室或高密度電漿(HDP)腔室。遠端電漿源190可操作地耦接至一個或多個氣態自由基源，其中氣體可為二矽烷、氨、氫、氮或惰性氣體(如氬或氦)的至少一者。控制器180控制在遠端電漿源190中激活的氣態自由基的產生以及分佈。
如圖1中所示，真空泵125連接至批次製程腔室100。真空泵125設以透過排放管道111排空外腔室110、透過排放管道124排空內腔室120的高壓區115並透過排放管道119排空內腔室120的低壓區117。真空泵125亦連接至出口管138，出口管138連接至一個或多個出口埠136，以自內腔室120移除任何流體。排氣閥126連接至內腔室120的高壓區115。排氣閥126設以透過排氣管道127排空內腔室120，以致在降低升降板140與匣150之前釋放高壓區115中的壓力。藉由控制器180控制真空泵125與排氣閥126的操作。
控制器180控制批次製程腔室100以及遠端電漿源190的操作。控制器180分別藉由連接導線181和183而可連通地連接至流體源131與測量內腔室120的各種參數的感測器(未圖示)。控制器180分別藉由連接導線185和187而可連通地連接至泵125與排氣閥126。控制器180分別藉由連接器188和189而可連通地連接至升降機構178與遠端電漿源190。控制器180包括中央處理單元(CPU) 182、記憶體184與支援電路186。CPU 182可為可用於工業設定中的任何形式的通用電腦處理器。記憶體184可為隨機存取記憶體、唯讀記憶體、軟碟或硬碟驅動器、或其他形式的數位儲存器。支援電路186傳統上耦接至CPU 182，且可包括快取、時脈電路、輸入/輸出系統、電源供應器等等。
批次製程腔室100有利地在內腔室120中的高壓區115與低壓區117之間產生隔離，使得處理流體658可以流動橫跨置於高壓區115中的基板155，同時保持基板155處於高溫下。在處理過程中，高壓區115變成退火腔室，其中先前沉積在基板155上的可流動材料558重新分佈以填充形成在基板155中的溝槽557。
批次製程腔室100用於同時處理複數個基板155。在裝載複數個基板155之前，打開泵125並連續操作以分別通過排放管道111和119排空外腔室110和內腔室120。外腔室110和內腔室120兩者在整個製程中都被抽空到真空並保持在真空中。連接至真空泵125的排放管道124此時尚未運行。同時，配置於外腔室110中的加熱器122***作以加熱內腔室120。與升降板140接合的加熱元件145也至少在預處理階段期間***作以加熱匣150，使得裝載到匣150上的基板155在升高到高壓區115之前被預熱。然後打開基板移送埠116的門160，以通過基板移送埠116在匣150上裝載複數個基板155。如圖5中所示，基板155上沉積有可流動材料558。
在將複數個基板155裝載至匣150上之後，關閉基板移送埠116的門160。一旦門160關閉，真空密封件162確保沒有空氣洩漏到內腔室120中。在預處理階段過程中，可以通過注入埠134引導流體進入內腔室120中以潤濕基板155。潤濕劑可為界面活性劑。潤濕劑在處理過程中提供處理流體與設置在匣150中的基板155之間更好的交互作用。
在以基板155裝載匣150之後，利用升降機構178升高升降板140並將升降板140上設置的匣150移動至內殼113中的處理位置。抵靠內殼113密封升降板140以在內殼113中界定的內腔室120中封圍出高壓區115，藉此隔離高壓區115與位於升降板140下方的低壓區117。在基板155的處理過程中，高壓區115的環境維持在使高壓區中的處理流體保持在氣相的溫度和壓力下。根據處理流體的組成來選擇上述壓力與溫度。在一實例中，加壓高壓區115至大於大氣壓的壓力，例如大於約10巴。在另一實例中，加壓高壓區115至約10至約60巴(例如，約20至約50巴)的壓力。在另一實例中，加壓高壓區115至高達約200巴的壓力。在處理過程中，高壓區115亦藉由配置在外腔室110中的加熱器122而維持在高溫下，例如超過攝氏225度的溫度(受設置在匣150上的基板155的熱預算限制)，例如約攝氏300度與約攝氏450度之間。與升降板140接合的加熱元件145可以輔助基板155的加熱，但是可選擇性地關閉。基板155暴露於通過注入埠134引入的處理流體658。使用泵125通過一個或多個出口埠136移除處理流體658。在基板155保持在高溫的同時暴露至高壓下的處理流體658導致先前沉積於基板155上的可流動材料558重新分佈並變得牢固地裝填在基板155的溝槽557中。
在處理之後，排氣閥126首先***作以通過排氣管道127排空內腔室120，由此將高壓區115內的壓力逐漸降低至約1大氣壓的壓力。一旦高壓區115內的壓力達到1大氣壓的壓力，排氣閥126關閉且泵125運行以通過排放管道124排空高壓區115。配置於外腔室110中的加熱器122與/或與升降板140接合的加熱元件145可選擇性地關閉以降低高壓區115中的溫度，並且因此允許基板155開始冷卻以進行基板移送。同時，注入埠134關閉。在高壓區115被抽空到真空狀態之後，升降板140與設置在升降板140上的匣150被降低以允許基板移出批次製程腔室100。當升降板140下降時，高壓區115與低壓區117流體連通地放置。由於高壓區115與低壓區117兩者現在處於真空狀態，所以可以通過基板移送埠116從批次製程腔室100中移除處理過的基板155。
在移除基板155之後，操作遠端電漿源190以產生流經入口195進入內腔室120的氣態自由基。氣態自由基與存在於內腔室120中的雜質反應，並形成由真空泵125通過一個或多個出口埠136移除的揮發性產物和副產物，從而清洗內腔室120並為下一批次的基板155準備內腔室120。
圖7係根據本揭露內容的另一實施例處理配置於批次製程腔室中的複數個基板的方法的方塊圖。方法700從文字塊710開始，用複數個基板裝載配置於升降板上的匣。一個或多個基板具有暴露於基板的外表面上的可流動材料。匣與升降板設置在維持在真空的批次製程腔室的內腔室中。例如但不限於，在操作的所有階段過程中，配置在批次製程腔室中且部分地圍繞內腔室的高壓區的外腔室保持在真空狀態。在某些實施例中，透過連接至內腔室的基板移送埠裝載基板至匣上。匣具有複數個基板儲存插槽以容納複數個基板。匣上的各個基板儲存插槽經標示以與基板移送埠對齊好在基板儲存插槽上裝載基板。同時，可預熱升降板與匣以開始增加裝載至匣上的基板的溫度以減少處理時間。一旦匣裝載了基板，在高壓區中的處理之前，可通過注入埠選擇性地引導潤濕劑進入內腔室中以潤濕基板。
在文字塊720，一旦匣裝載了基板或以其他方式準備進行處理，則匣被升高到處理位置，處理位置將高壓區中的匣與位於內腔室中的低壓區隔離。升降機構用於將升降板與配置在升降板上的匣升高到處理位置，使得在內腔室中隔離高壓區。
在文字塊730，一旦高壓區與低壓區隔離，高壓區的真空環境被高壓環境所取代。藉由將基板暴露至處理流體並且加壓與加熱高壓區至將高壓區中的處理流體維持在氣相中的壓力和溫度，而將配置在基板上的可流動材料在基板上重新分佈。在一個實例中，加壓高壓區至約10與約60巴之間的壓力，加熱基板至大於約攝氏225度的溫度。藉由以配置在外腔室中的加熱器與選擇性的與支撐匣的升降板接合的加熱元件將內腔室中的高壓區維持在大於約攝氏250度(例如，約攝氏300度與約攝氏450度之間)的溫度下來加熱基板。透過注入埠引導處理流體進入批次製程腔室中。在某些實施例中，處理流體可為蒸氣或水。舉例而言，蒸氣可為乾蒸氣。在另一個實例中，在流入腔室中或在腔室中任一者之前，例如藉由加熱器使蒸汽過熱。透過內腔室的一個或多個出口埠移除處理流體。在處理基板時，暴露在基板的表面上的可流動材料重新分佈以填充形成在基板中的縫隙與溝槽。
在處理之後，高壓區內的壓力降低至真空。內腔室可選擇性地冷卻，且注入埠關閉。一旦高壓區被抽空至真空狀態，上方配置有匣的升降板被降低以允許高壓區與低壓區之間的流體連通。通過基板移送埠將現在處於真空的處理過基板自批次製程腔室移除。在移除基板之後，藉由自遠端電漿源流動自由基來清潔批次製程腔室，自由基與存在於內腔室中的雜質反應以形成後續自內腔室抽出與移除的揮發性產物與副產物。批次製程腔室因此準備處理下一批基板。
批次製程腔室與處理批次製程腔室中的複數個基板的方法使得複數個基板能夠在高壓和高溫下進行處理。本揭露內容的結構藉由在處理過程中分離高壓區與低壓區而有利地在批次製程腔室的內腔室中產生隔離，同時低壓區保持真空。在移除隔離時將基板裝載與卸載至匣上。隔離允許兩個不同環境之間的熱分離：一個用於高壓區中的處理，另一個用於在低壓區中裝載/卸載基板。藉由在處理過程中保持高壓區封閉，隔離還可以防止腔室的部件之間的熱不一致。
圍繞內腔室的高壓區配置且持續維持在真空下的外腔室額外地作為內腔室內高壓區的處理環境與批次製程腔室外的大氣之間的安全圍阻，以避免任何空氣洩漏至處理環境中或處理流體進入腔室外的大氣中的損失。再者，由於外腔室維持在真空中且與批次製程腔室外的大氣隔離，外腔室在安裝在外腔室中且設以加熱內腔室之加熱器的選擇上提供靈活性。因此，可以使用在真空環境下更有效工作的加熱器。
上述的批次製程腔室額外地提供了可運作為下列任一者的靈活性：獨立製程腔室；或者對接至群集工具中的工廠接口的製程腔室；或原位作為製程腔室的一部分。這確保了可維持用來處理基板的潔淨室級別的環境。
雖然上文針對本揭露內容的特定實施例，但可理解這些實施例僅僅是本發明的原理和應用的說明。因此可理解可在不悖離本發明的精神與範圍的情況下對說明性實施例進行多種修飾而達成其他實施例，且本發明的範圍由隨附的申請專利範圍所界定。
100‧‧‧批次製程腔室
110‧‧‧外腔室
111、119、124‧‧‧排放管道
112‧‧‧上殼
113‧‧‧內殼
114‧‧‧下殼
115‧‧‧高壓區
116‧‧‧基板移送埠
117‧‧‧低壓區
120‧‧‧內腔室
122‧‧‧加熱器
125‧‧‧真空泵
126‧‧‧排氣閥
127‧‧‧排氣管道
130‧‧‧注入環
131‧‧‧流體源
132‧‧‧入口管
134‧‧‧注入埠
135‧‧‧高壓密封件
136‧‧‧出口埠
138‧‧‧出口管
140‧‧‧升降板
142‧‧‧桿
145‧‧‧加熱元件
150‧‧‧匣
152‧‧‧頂表面
153‧‧‧壁
154‧‧‧底表面
155‧‧‧基板
156‧‧‧基板儲存插槽
160‧‧‧門
162‧‧‧真空密封件
170‧‧‧底板
172‧‧‧波紋管
176‧‧‧平臺
178‧‧‧升降機構
180‧‧‧控制器
181、183、185、187‧‧‧連接導線
182‧‧‧CPU
184‧‧‧記憶體
186‧‧‧支援電路
188、189‧‧‧連接器
190‧‧‧遠端電漿源
195‧‧‧入口
331‧‧‧配件
333‧‧‧通道
337‧‧‧冷卻通道
339‧‧‧噴嘴
340‧‧‧固定件
342‧‧‧間隙孔
557‧‧‧溝槽
558‧‧‧可流動材料
658‧‧‧箭號
700‧‧‧方法
710、720、730‧‧‧文字塊
為了可詳細地理解本揭露內容的上方記載特徵，可藉由參照實施例(某些描繪於附圖中)而取得揭露內容更特定的描述內容(簡短概述於上)。然而，值得注意的是附圖僅描繪示範性實施例並因此不被視為限制範圍，因為此揭露內容可允許其他等效性實施例。
圖1係匣在低壓區中的批次製程腔室的簡化正面橫剖面圖。
圖2係匣在高壓區中的批次製程腔室的簡化正面橫剖面圖。
圖3係連接至批次製程腔室的內殼的注入環的簡化正面橫剖面圖。
圖4係具有複數個基板配置於複數個基板儲存插槽上的匣的簡化正面橫剖面圖。
圖5係在批次製程腔室中的處理之前的基板的示意圖。
圖6係在批次製程腔室中的處理之後的基板的示意圖。
圖7係處理配置於圖1的批次製程腔室中的複數個基板的方法的方塊圖。
為了促進理解，已經儘可能利用相同的元件符號來標示圖式中共有的相同元件。預期一個實施例的元件與特徵可有利地併入其他實施例而毋需進一步列舉。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無

Claims (20)

  1. 一種批次製程腔室，包括： 一下殼； 一基板移送埠，通過該下殼形成； 一上殼，配置於該下殼上； 一內殼，配置於該上殼中，該內殼與該上殼界定一外腔室，該內殼與該下殼界定一隔離於該外腔室的內腔室； 一加熱器，操作用來加熱該內殼； 一升降板，可移動地配置於該下殼中，其中該升降板在一升高位置時將該內腔室密封地分成高壓區與低壓區，該高壓區由該升降板與該內殼所界定； 一匣，配置於該升降板上且設以固持複數個基板；及 一注入埠，設以引導一流體進入該內腔室中。
  2. 如請求項1所述之批次製程腔室，其中該外腔室流體地隔離於該內腔室。
  3. 如請求項2所述之批次製程腔室，其中該加熱器配置於該外腔室中。
  4. 如請求項1所述之批次製程腔室，其中該升降板在該升高位置時密封該匣於該高壓區中。
  5. 如請求項4所述之批次製程腔室，其中該升降板在一降低位置時允許該高壓區與該低壓區之間的流體連通。
  6. 如請求項1所述之批次製程腔室，其中該升降板在一升高位置時接觸一高壓密封件，該高壓密封件將該內腔室密封地分成高壓區與低壓區。
  7. 如請求項6所述之批次製程腔室，進一步包括： 一冷卻通道，配置鄰近該高壓密封件，該冷卻通道配置在該高壓密封件與該加熱器之間。
  8. 如請求項1所述之批次製程腔室，進一步包括： 一個或多個出口埠，橫跨該內腔室面對該注入埠。
  9. 如請求項1所述之批次製程腔室，進一步包括： 一注入環，可移除地耦接至該內殼的一底表面，該注入環具有配置在該注入環中的該注入埠。
  10. 如請求項9所述之批次製程腔室，進一步包括： 一高壓密封件，設以在該升降板處於一升高位置時密封該注入環至該升降板。
  11. 如請求項10所述之批次製程腔室，進一步包括： 一冷卻通道，配置於該注入環中且在該高壓密封件與該內殼之間。
  12. 如請求項9所述之批次製程腔室，進一步包括： 一個或多個出口埠，通過該注入環形成，橫跨該內腔室面對該注入埠。
  13. 如請求項1所述之批次製程腔室，進一步包括： 一遠端電漿源，流體地耦接至該內腔室。
  14. 如請求項1所述之批次製程腔室，進一步包括： 一加熱元件，接合於該升降板。
  15. 一種批次製程腔室，包括： 一下殼； 一基板移送埠，通過該下殼形成； 一底板，耦接至該下殼的一底表面； 一上殼，配置在該下殼上； 一內殼，配置在該上殼中，該內殼界定具有一高壓區與一低壓區的一內腔室的一部分； 一外腔室，由該內殼與該上殼所界定，該外腔室隔離於該內腔室； 一個或多個加熱器，配置於該外腔室中且操作用來加熱該內殼； 一升降板，可移動地配置於該下殼中，該升降板設以升高以密封該高壓區，並設以降低以允許該高壓區與該低壓區之間的流體連通； 一加熱元件，耦接至該升降板； 一匣，配置於該升降板上並設以固持複數個基板； 一注入環，可移除地耦接至該內殼的一底表面； 一注入埠，配置於該注入環中且設以引導一流體進入該內腔室中； 一高壓密封件，設以耦接該注入環至該高壓區中的該升降板； 一冷卻通道，配置鄰近該高壓密封件； 一個或多個出口埠，通過該注入環形成且橫跨該內腔室面對該注入埠；及 一遠端電漿源，耦接至該內腔室。
  16. 一種處理配置於一批次製程腔室中的複數個基板的方法，包括以下步驟： 以複數個基板裝載一配置於一升降板上的匣，該匣與該升降板配置於該批次製程腔室的一內腔室中，該複數個基板的至少一第一基板具有在該至少一第一基板之一外表面上暴露的一可流動材料； 提升該匣至一處理位置，該處理位置使該內腔室的一高壓區中的該匣與該內腔室的一低壓區隔離；及 流動該第一基板的該外表面上暴露的該可流動材料，其中流動步驟進一步包括以下步驟： 在位於該高壓區中時，在維持一處理流體於一氣相中的一溫度與壓力下暴露該第一基板至該處理流體。
  17. 如請求項16所述之方法，其中暴露該第一基板至該處理流體的步驟包括以下步驟： 暴露該第一基板至蒸氣或水。
  18. 如請求項16所述之方法，進一步包括以下步驟： 在提高該升降板之前在該內腔室中暴露該第一基板至一潤濕劑。
  19. 如請求項16所述之方法，進一步包括以下步驟： 在一部分地圍繞該內腔室的該高壓區的外腔室中維持一真空。
  20. 如請求項16所述之方法，進一步包括以下步驟： 藉由流動來自一遠端電漿源的數個自由基來清洗該內腔室。
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