TW201834050A - Method for manufacturing wafer - Google Patents
Method for manufacturing wafer Download PDFInfo
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- TW201834050A TW201834050A TW107105867A TW107105867A TW201834050A TW 201834050 A TW201834050 A TW 201834050A TW 107105867 A TW107105867 A TW 107105867A TW 107105867 A TW107105867 A TW 107105867A TW 201834050 A TW201834050 A TW 201834050A
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- Prior art keywords
- wafer
- single crystal
- workpiece
- semiconductor single
- crystal rod
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 26
- 235000012431 wafers Nutrition 0.000 claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 238000005520 cutting process Methods 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 229910000831 Steel Inorganic materials 0.000 description 29
- 239000010959 steel Substances 0.000 description 29
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005498 polishing Methods 0.000 description 9
- 239000006061 abrasive grain Substances 0.000 description 8
- 239000002002 slurry Substances 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 238000003698 laser cutting Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 238000002407 reforming Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000010330 laser marking Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
本發明係關於晶圓的製造方法。The invention relates to a method of manufacturing wafers.
習知，例如，作為自矽晶棒或化合物半導體晶棒等的半導體單晶棒切出晶圓的手段，線鋸為眾所皆知。此線鋸係藉由於複數個滾筒的周圍捲繞多數個切斷用線而形成線列，使該切斷用線於軸方向高速驅動，並且將拋光漿予以適當供給的同時，對線列將半導體單晶棒予以切入搬送，藉此使此半導體單晶棒在各線位置同時地切斷。Conventionally, for example, a wire saw is known as a method of cutting a wafer from a semiconductor single crystal rod such as a silicon ingot or a compound semiconductor ingot. This wire saw is formed by winding a plurality of cutting wires around a plurality of rollers to form a wire row, driving the cutting wire at high speed in the axial direction, and supplying polishing slurry appropriately, while The semiconductor single crystal rod is cut and transported, whereby the semiconductor single crystal rod is simultaneously cut at each wire position.
於此，第2圖顯示一般的線鋸的一範例的概要。如第2圖所示，此線鋸101主要以將半導體單晶棒W切斷用的鋼線102（高張力鋼線）、經捲繞鋼線102的附溝滾筒103、對鋼線102賦予張力用的機構104、104’、將待被切斷的半導體單晶棒W朝下方送出的機構105、及於切斷時將使GC（碳化矽）磨粒等分散於液體的漿液109予以供給的機構106。Here, FIG. 2 shows an outline of an example of a general wire saw. As shown in FIG. 2, this wire saw 101 is mainly composed of a steel wire 102 (high-tensile steel wire) for cutting a semiconductor single crystal rod W, a grooved roller 103 wound around the steel wire 102, and a steel wire 102 The mechanism 104, 104' for tension, the mechanism 105 which sends the semiconductor single crystal rod W to be cut downward, and the slurry 109 in which GC (silicon carbide) abrasive particles are dispersed in the liquid are supplied during cutting的机构106。 The agency 106.
鋼線102自其中一個捲線器107放出，經過張力賦予機構104，進入附溝滾筒103。鋼線102捲繞於此附溝滾筒103上300至400次左右後，經過另一個張力賦予機構104’而捲繞於捲線器107’。The steel wire 102 is discharged from one of the winders 107, passes through the tension imparting mechanism 104, and enters the grooved roller 103. After the steel wire 102 is wound around the grooved roller 103 for about 300 to 400 times, it passes through another tension imparting mechanism 104' and is wound on the winder 107'.
再者，附溝滾筒103係為於鐵鋼製圓筒的周圍壓入聚氨酯樹脂並於其表面以一定的間距切割出溝槽的滾筒，經捲繞的鋼線102係藉由驅動用馬達110而成為能以預定的週期於往復方向驅動。Furthermore, the grooved roller 103 is a roller in which polyurethane resin is pressed around an iron-steel cylinder and grooves are cut at regular intervals on the surface thereof. The wound steel wire 102 is driven by a driving motor 110 Instead, it can be driven in the reciprocating direction at a predetermined cycle.
另外，於半導體單晶棒W的切斷時，藉由工件給送機構105使半導體單晶棒W被支承的同時下推，而送出至捲繞在附溝滾筒103的鋼線102。使用如此的線鋸101，使用鋼線張力賦予機構104施加適當的張力於鋼線102，藉由驅動用馬達110使鋼線102於往復方向行進的同時透過噴嘴108供給漿液109，且以工件給送機構105將半導體單晶棒予以切入搬送而藉此切斷半導體單晶棒。In addition, when the semiconductor single crystal rod W is cut, the semiconductor single crystal rod W is pushed down while being supported by the workpiece feeding mechanism 105, and is sent out to the steel wire 102 wound around the grooved roller 103. Using such a wire saw 101, a steel wire tension imparting mechanism 104 is used to apply appropriate tension to the steel wire 102, and the slurry 102 is supplied through the nozzle 108 while the steel wire 102 travels in the reciprocating direction by the driving motor 110, and The sending mechanism 105 cuts and transports the semiconductor single crystal rod, thereby cutting the semiconductor single crystal rod.
再者，上述之中，並未使用含有磨粒的漿液，替代地使用經將鑽石磨粒等固定附著於鋼線的表面的固定磨粒鋼線，而切斷工件的方法亦為人所知。以此固定磨粒鋼線的切斷，藉由裝設固定磨粒鋼線代替第2圖所示的線鋸的鋼線線材，將漿液更換成未含磨粒的冷卻水，而能依原樣直接使用線鋸。In addition, among the above, a slurry containing abrasive grains is not used, and instead, a fixed abrasive grain steel wire to which diamond abrasive grains and the like are fixedly attached to the surface of the steel wire is used, and a method of cutting the workpiece is also known . In this way, the fixed abrasive grain steel wire is cut, and the fixed abrasive grain steel wire is replaced with the steel wire rod of the wire saw shown in Figure 2 to replace the slurry with the cooling water without abrasive grains. Use the wire saw directly.
如此一來，自半導體單晶棒切片出的晶圓，之後如第3圖所示的流程，經過倒角、研光或輪磨、硬雷射刻印（hard laser mark）、蝕刻、雙面拋光、鏡面倒角及CMP（化學機械拋光）等的步驟而成為製品。 ［先前技術文獻］ ［專利文獻］In this way, the wafer sliced from the semiconductor single crystal rod is then subjected to chamfering, polishing or wheel grinding, hard laser marking (hard laser mark), etching, and double-sided polishing as shown in the figure 3 , Mirror chamfering and CMP (chemical mechanical polishing) and other steps to become products. [Prior Art Literature] [Patent Literature]
［專利文獻1］日本特開2016-189498號公報[Patent Document 1] Japanese Patent Laid-Open No. 2016-189498
［發明所欲解決之問題］ 然而，如同上述的藉由線鋸的工件的切斷方法之中，有伴隨著切斷而成為切屑的矽的量，也就是所謂的鋸口加工量〔鋸口損失（kerf loss）〕會增大的問題。例如，使用直徑140μm的鋼線及平均粒徑為8μm的GC磨粒（GC#1500）的情況，鋸口加工量為約170μm。亦即，每一片晶圓就有170μm的厚度量的切屑產生。[Problems to be Solved by the Invention] However, as with the above-mentioned method of cutting a workpiece by a wire saw, there is an amount of silicon that becomes chips as a result of cutting, which is the so-called sawing amount Loss (kerf loss)] will increase the problem. For example, when a steel wire with a diameter of 140 μm and GC abrasive grains (GC#1500) with an average particle size of 8 μm are used, the sawing capacity is about 170 μm. In other words, each wafer has a chip thickness of 170 μm.
相對於此，作為能減少鋸口加工量的切斷方法，使用雷射的切斷方法被提出（例如專利文獻1）。藉由此方法，雖然能將鋸口加工量降低至使用線鋸的情況的1/10左右，但是由於係為自晶棒一次切出一片晶圓的加工方法的緣故，與以一次的切斷能得到數百片的晶圓的線鋸相比，每一片晶圓所花費的加工時間為極度地長。因此，藉由此方法會有生產性顯著地降低，而晶圓的製造成本會增大超過鋸口加工量的份的問題。On the other hand, as a cutting method that can reduce the amount of machining of the saw blade, a cutting method using laser has been proposed (for example, Patent Document 1). By this method, although the processing amount of the saw blade can be reduced to about 1/10 of the case where the wire saw is used, but because it is a processing method of cutting one wafer at a time from the ingot, it is different from the one-time cutting Compared with a wire saw that can obtain hundreds of wafers, the processing time per wafer is extremely long. Therefore, by this method, the productivity will be significantly reduced, and the manufacturing cost of the wafer will increase the problem of exceeding the processing amount of the saw blade.
本發明係鑑於如同前述的問題，其目的在於提供一種晶圓的製造方法，在將矽晶棒或化合物半導體晶棒等的半導體單晶棒切斷成晶圓狀的方法中，不會使生產性大幅度低下，能降低鋸口加工量。 ［解決問題之技術手段］In view of the above problems, the present invention aims to provide a method for manufacturing a wafer. In a method of cutting a semiconductor single crystal rod such as a silicon ingot or a compound semiconductor ingot into a wafer shape, it does not cause production The performance is greatly reduced, which can reduce the amount of sawing. [Technical means to solve problems]
為了達成上述目的，本發明提供一種晶圓的製造方法，係藉由將半導體單晶棒切斷而製造晶圓的方法，其中在使用線鋸將該半導體單晶棒予以切片而得到晶圓狀的工件之後，藉由使用雷射將該晶圓狀的工件予以於厚度方向分割，而自個別的該晶圓狀的工件得到複數個晶圓。In order to achieve the above object, the present invention provides a method of manufacturing a wafer, which is a method of manufacturing a wafer by cutting a semiconductor single crystal rod, wherein the semiconductor single crystal rod is sliced using a wire saw to obtain a wafer shape After the workpiece, the wafer-shaped workpiece is divided in the thickness direction by using a laser, and a plurality of wafers are obtained from the individual wafer-shaped workpiece.
如此一來，以線鋸將半導體單晶棒切片成晶圓狀的工件的情況，能比依往常般切出晶圓的情況增加鋼線列的鋼線間隔而厚厚地切割的緣故，切斷半導體單晶棒的鋼線的根數減少，而能削減鋸口加工量。再者，將如此得到的晶圓狀的工件，使用鋸口加工量少的雷射而分割，能更進一步降低鋸口加工量。再者，藉由將預先以線鋸將晶棒切短的晶圓狀的工件使用雷射分割，能降低藉由雷射的切斷次數的緣故，能防止加工時間的大幅度的增加。In this way, when a semiconductor single crystal rod is sliced into a wafer-like workpiece with a wire saw, the thickness of the steel wire row can be increased and the thickness of the steel wire row can be cut thicker than usual. The number of steel wires for semiconductor single crystal rods is reduced, and the amount of sawing can be reduced. Furthermore, the wafer-like workpiece thus obtained can be divided using a laser with a small amount of saw-edge machining, which can further reduce the amount of saw-edge machining. In addition, by dividing the wafer-shaped work piece which has been shortened by a wire saw into a wafer in advance using a laser, the number of times of cutting by the laser can be reduced, and a large increase in processing time can be prevented.
此時，在使用該線鋸的該半導體單晶棒的切片之中，以使該晶圓狀的工件的厚度成為超過作為製品的晶圓的厚度的二倍的厚度的方式將該半導體單晶棒予以切片為佳。At this time, in the slicing of the semiconductor single crystal rod using the wire saw, the semiconductor single crystal is so made that the thickness of the wafer-shaped workpiece becomes more than twice the thickness of the wafer as the product The rod is preferably sliced.
如此一來，將藉由使用雷射的分割所得的晶圓，用於使其製品化的如研光、輪磨、蝕刻、拋光等的厚度減少的處理中，能確保加工量，而能得到最終期望的厚度的製品晶圓。In this way, the wafers obtained by laser division can be used to reduce the thickness of processed products such as polishing, wheel grinding, etching, polishing, etc., which can ensure the processing amount and obtain The final desired thickness of the product wafer.
再者，在使用該雷射的該晶圓狀的工件的分割之中，將該晶圓狀的工件予以於厚度方向分割成二片或三片為佳。Furthermore, in the division of the wafer-shaped workpiece using the laser, it is preferable to divide the wafer-shaped workpiece into two or three pieces in the thickness direction.
如此一來，能削減鋸口加工量的同時，更進一步降低每一片晶圓的製造所花費的時間。In this way, it is possible to reduce the amount of processing of the sawing edge while further reducing the time it takes to manufacture each wafer.
再者，該半導體單晶棒的直徑能為300mm以上。Furthermore, the diameter of the semiconductor single crystal rod can be 300 mm or more.
本發明的晶圓的製造方法，對於半導體單晶棒的直徑為300mm以上特別有效。 〔對照先前技術之功效〕The method of manufacturing a wafer of the present invention is particularly effective for a semiconductor single crystal rod having a diameter of 300 mm or more. [Comparing the efficacy of the previous technology]
根據本發明的晶圓的製造方法，在將矽晶棒或化合物半導體晶棒等的半導體單晶棒切斷成晶圓的方法之中，能不使生產性大大地低落而消減鋸口加工量。According to the method of manufacturing a wafer of the present invention, in a method of cutting a semiconductor single crystal rod such as a silicon ingot or a compound semiconductor ingot into a wafer, it is possible to reduce the amount of sawing without reducing productivity greatly .
以下，說明本發明的實施例，但是本發明並非限定於此。Hereinafter, embodiments of the present invention will be described, but the present invention is not limited thereto.
第1圖顯示自半導體單晶棒製造晶圓的本發明的晶圓的製造方法的一範例的流程。首先，準備作為切斷對象的半導體單晶棒，藉由使用線鋸將半導體單晶棒切片而得到晶圓狀的工件（第1圖的步驟1）。此時，能自一根半導體單晶棒得到複數個晶圓狀的工件。再者，作為線鋸，能使用如第2圖所示的一般的線鋸。作為半導體單晶棒，能準備矽單晶棒或化合物半導體晶棒等。FIG. 1 shows an exemplary flow of the method for manufacturing a wafer of the present invention for manufacturing a wafer from a semiconductor single crystal rod. First, a semiconductor single crystal rod to be cut is prepared, and a wafer-like workpiece is obtained by slicing the semiconductor single crystal rod using a wire saw (Step 1 in FIG. 1 ). At this time, a plurality of wafer-shaped workpieces can be obtained from one semiconductor single crystal rod. In addition, as the wire saw, a general wire saw as shown in FIG. 2 can be used. As the semiconductor single crystal rod, a silicon single crystal rod or a compound semiconductor crystal rod can be prepared.
此時，根據本發明能藉由將半導體單晶棒以比習知的厚度為厚的方式切片而得到晶圓狀的工件。更具體而言，以晶圓狀的工件的厚度為超過成為製品的晶圓的厚度的二倍的厚度的方式將半導體單晶棒切片為佳。以如此的厚度切片，能確實地確保後續步驟的輪磨、蝕刻、拋光等之中的晶圓的加工量。晶圓狀的工件的厚度，雖然由於因應成為製品的晶圓的厚度或後續步驟中的加工量而改變的緣故，而並未特別限定，但是，例如，能在工件為直徑300mm的矽晶圓的情況為1600μm~1800μm，在工件為直徑450mm的矽晶圓的情況為1750μm~1950μm。再者，在後續步驟將晶圓狀的工件分割成三片的情況，當然，以超過切片中成為製品的晶圓的厚度的三倍的方式切片即可。At this time, according to the present invention, a wafer-shaped workpiece can be obtained by slicing a semiconductor single crystal rod to be thicker than a conventional thickness. More specifically, it is preferable that the semiconductor single crystal rod is sliced so that the thickness of the wafer-shaped workpiece is more than twice the thickness of the wafer to be the product. Slicing at such a thickness can surely secure the processing amount of the wafer in subsequent grinding, etching, polishing, and the like. The thickness of the wafer-shaped workpiece is not particularly limited because it changes depending on the thickness of the wafer to be the product or the processing amount in the subsequent steps, but, for example, the workpiece can be a silicon wafer with a diameter of 300 mm The case is 1600μm ~ 1800μm, when the workpiece is a silicon wafer with a diameter of 450mm is 1750μm ~ 1950μm. Furthermore, in the case where the wafer-like workpiece is divided into three pieces in the subsequent step, of course, it may be sliced so as to exceed three times the thickness of the wafer that becomes the product during dicing.
晶圓狀的工件的厚度，能例如在如第2圖的線鋸之中，藉由將以多數條鋼線102捲繞於複數個滾筒103的周圍而形成的鋼線列的鋼線彼此間的間隔（亦稱為鋼線間鋸）予以適當地設定而調整。The thickness of a wafer-like workpiece can be, for example, in a wire saw as shown in FIG. 2, by winding a plurality of steel wires 102 around a plurality of rollers 103, the steel wires of the steel wire row are between each other The interval (also known as the saw between steel wires) is appropriately set and adjusted.
再者，於藉由線鋸的切片步驟之後，將晶圓狀的工件的兩個端面輪磨而成為平滑的表面亦可（第1圖的步驟2）。Furthermore, after the slicing step by the wire saw, the two end faces of the wafer-shaped workpiece may be wheel-milled into a smooth surface (step 2 of FIG. 1).
接著，藉由使用雷射而將晶圓狀的工件於厚度方向分割，自個別的晶圓狀的工件得到複數個晶圓（第1圖的步驟3）。藉由雷射的晶圓狀的工件的分割，例如，藉由記載於專利文件1的方法而進行即可。更具體而言，如同專利文獻1的記載，能藉由雷射照射，於晶圓狀的工件的內部，於其主要表面平行的方向形成內部改質層之後，藉由沿著內部改質層剝離晶圓而得到晶圓。除此之外，也能以例如日本特開2009-269296號公報所記載的方式，藉由雷射光束直接切削晶圓狀的工件，將晶圓狀的工件於厚度方向分割而得到晶圓。Next, by using a laser, the wafer-shaped workpiece is divided in the thickness direction to obtain a plurality of wafers from the individual wafer-shaped workpieces (Step 3 in FIG. 1 ). The division of the wafer-like workpiece by laser may be performed, for example, by the method described in Patent Document 1. More specifically, as described in Patent Document 1, it is possible to form an internal reforming layer in a direction parallel to the main surface of the wafer-like workpiece by laser irradiation, and then by following the internal reforming layer The wafer is peeled off to obtain the wafer. In addition, for example, the wafer-shaped workpiece can be directly cut by a laser beam in the manner described in Japanese Patent Laid-Open No. 2009-269296, and the wafer-shaped workpiece can be divided in the thickness direction to obtain a wafer.
本發明，在此種使用雷射的晶圓狀的工件的分割之中，將晶圓狀的工件於厚度方向分割成二片或三片為佳。藉此，藉由雷射的切斷係每一片晶圓狀的工件以一至二次左右即完成的緣故，能在削減鋸口加工量的同時，更進一步降低每一片晶圓的製造所花費的時間。此情況，在藉由線鋸的切片之中，以自習知的半導體單晶棒切出的晶圓的二倍或三倍的厚度切出晶圓狀的工件即可。In the present invention, in the division of the wafer-shaped workpiece using laser, it is preferable to divide the wafer-shaped workpiece into two or three pieces in the thickness direction. In this way, the laser cutting is completed for each wafer-shaped workpiece in about one to two times, which can reduce the amount of sawing processing and further reduce the cost of manufacturing each wafer time. In this case, in the slicing by the wire saw, a wafer-like workpiece may be cut with a thickness twice or three times that of a wafer cut from a conventional semiconductor single crystal rod.
藉由依上述方式而切斷半導體單晶棒而製造晶圓，能不讓生產性大大地降低而消減鋸口加工量。By cutting a semiconductor single crystal rod in the above manner to manufacture a wafer, it is possible to reduce the amount of saw-edge processing without greatly reducing productivity.
再者，本發明係特別合適於半導體單晶棒的直徑為300mm以上的情況的方法。於使用線鋸而將工件切片時，作為減少鋸口加工量的習知的方法，雖然有將使用的線鋸的直徑變細的方法，但是此方法會隨著半導體單晶棒的直徑愈大而難度愈高。另一方面，本發明在直徑為300mm以上的矽晶圓之中也能容易地削減鋸口加工量。Furthermore, the present invention is particularly suitable for a method where the diameter of a semiconductor single crystal rod is 300 mm or more. When slicing a workpiece using a wire saw, as a conventional method for reducing the amount of machining of the sawing edge, although there is a method of narrowing the diameter of the wire saw used, this method will increase with the diameter of the semiconductor single crystal rod The higher the difficulty. On the other hand, the present invention can also easily reduce the amount of sawing processing even in silicon wafers with a diameter of 300 mm or more.
再者，對於如此製造的晶圓，實施第1圖所示的倒角（第1圖的步驟4）、研光或輪磨（第1圖的步驟5）、硬雷射標記（第1圖的步驟6）、蝕刻（第1圖的步驟7）、雙面拋光（第1圖的步驟8）、鏡面倒角（第1圖的步驟9）及CMP（第1圖的步驟10）等的處理而成為製品晶圓。 ［實施例］Furthermore, for the wafers manufactured in this way, chamfering (Step 4 in FIG. 1), polishing or wheel grinding (Step 5 in FIG. 1), and hard laser marking (Figure 1) shown in FIG. 1 are performed. Step 6), etching (Step 7 in Figure 1), double-sided polishing (Step 8 in Figure 1), mirror chamfering (Step 9 in Figure 1), CMP (Step 10 in Figure 1), etc. Processed to become product wafers. [Example]
以下，雖然表示本發明的實施例及比較例而更具體地說明本發明，但是本發明並非限定於這些實施例。Hereinafter, although Examples and Comparative Examples of the present invention are shown to more specifically explain the present invention, the present invention is not limited to these Examples.
［實施例一、實施例二、比較例］ 對於本發明的晶圓的製造方法（實施例一、二）及習知的方法（比較例），比較了個別切斷相同長度的單晶矽晶棒時的結果。在實施例一、二之中，以依照如第1圖的本發明的晶圓製造方法的流程，切斷單晶矽晶棒而製造了複數個矽晶圓。另一方面，在比較例之中，以依照如第3圖的習知的方法的流程切斷了單晶矽晶棒。再者，將第1圖、第3圖的步驟4及4’之中的矽晶圓的厚度，以實施例一、二及比較例全部皆成為880μm的方式切斷。再者，第1圖、第3圖的步驟5及5’以後的加工條件為相同條件。[Example 1, Example 2, Comparative Example] For the wafer manufacturing method of the present invention (Examples 1 and 2) and the conventional method (Comparative Example), single-crystal silicon crystals of the same length were cut individually Great results. In the first and second embodiments, according to the flow of the wafer manufacturing method of the present invention as shown in FIG. 1, a plurality of silicon wafers are manufactured by cutting a single crystal silicon ingot. On the other hand, in the comparative example, the single crystal silicon ingot was cut in the flow according to the conventional method as shown in FIG. 3. In addition, the thickness of the silicon wafer in steps 4 and 4'in FIGS. 1 and 3 was cut so that all of the first, second, and comparative examples became 880 m. In addition, the processing conditions after steps 5 and 5'in Figs. 1 and 3 are the same.
首先，對比較例進行說明。比較例中，使用如第2圖所示的線鋸，將直徑300mm、長度300mm的單晶矽晶棒切斷成厚度880μm的複數個晶圓狀。鋼線用直徑140μm者，賦予2.5kgf的張力，以600m/min的平均速度，以60s/c的循環使鋼線往復行進而切斷。再者，作為漿液，使用將GC#1500（平均粒徑8μm的碳化矽磨粒）與冷卻液以重量比50:50的比率混合者。如此所得到的切片晶圓的厚度如上述般為880μm，自一根單晶矽晶棒得到的晶圓的片數為282片。First, the comparative example will be described. In the comparative example, a wire saw as shown in FIG. 2 was used to cut a single crystal silicon ingot having a diameter of 300 mm and a length of 300 mm into a plurality of wafers with a thickness of 880 μm. For steel wire with a diameter of 140 μm, a tension of 2.5 kgf is applied, and the steel wire is reciprocated and cut at an average speed of 600 m/min at a cycle of 60 s/c. In addition, as the slurry, a mixture of GC#1500 (silicon carbide abrasive grains with an average particle diameter of 8 μm) and a cooling liquid in a weight ratio of 50:50 was used. The thickness of the sliced wafer thus obtained was 880 μm as described above, and the number of wafers obtained from a single crystal silicon ingot was 282.
接著，對於實施例一、二進行說明。使用線鋸的切斷（第1圖的步驟1）之中，使用如第2圖所示的類型的線鋸，將直徑300mm、長度300mm的單晶矽晶棒切片而得到晶圓狀的工件。但是，實施例一、二之中，切片後的晶圓狀的工件的厚度，以後續進行的藉由使用雷射的切斷的分割數為二片的情況為1790μm（實施例一），三片的情況為2680μm（實施例二）的方式，調整了切片時的鋼線間距。接著，實施例一、二之中，將如此得到的晶圓狀的工件的雙面個別輪磨10μm合計20μm而成為平滑的表面，接著藉由使用雷射的切斷而將晶圓分割成二片（實施例一）或三片（實施例三），而製造了厚度880μm的晶圓。以此方法得到的晶圓的片數，在藉由使用雷射的切斷的分割數為二片的情況的實施例一為300片，分割數為三片的情況的實施例二為306片。Next, Examples 1 and 2 will be described. In the cutting using a wire saw (Step 1 of FIG. 1), a wire saw of the type shown in FIG. 2 is used to slice a single crystal silicon ingot with a diameter of 300 mm and a length of 300 mm to obtain a wafer-like workpiece. . However, in Examples 1 and 2, the thickness of the wafer-shaped workpiece after slicing is 1790 μm in the case where the number of subsequent divisions by laser cutting is two pieces (Example 1), three In the case of the sheet, the distance between the steel wires during slicing was adjusted to 2680 μm (Example 2). Next, in Examples 1 and 2, the wafer-like workpieces thus obtained were individually wheel-milled 10 μm in total to 20 μm to form a smooth surface, and then the wafer was divided into two by laser cutting Wafer (Example 1) or three (Example 3), and a wafer with a thickness of 880 μm was manufactured. The number of wafers obtained by this method is 300 when the number of divisions by laser cutting is two, and the number two is three when the number of divisions is three. .
上述的實施例之中，作為藉由雷射的切斷方法，進行了以於藉由線鋸而切片之後，自輪磨加工的面的方向照射雷射，於晶圓狀的工件的內部，於平行於其主要平面的方向形成內部改質層，沿著內部改質層剝離晶圓的方法。形成內部改質層的位置，實施例一之中為雷射照射前的工件厚度的1/2的深度，實施例二之中為雷射照射前的工件厚度的1/3的深度。實施例一之中，對工件的任意的片側的面照射雷射，剝離一片晶圓而藉此將工件分割成二片。實施例二之中，藉由首先對工件的任意的片側的面照射雷射，剝離一片晶圓，接著，也以相同的條件對相反側的面照射雷射，剝離一片晶圓，而藉此將工件分割成三片。In the above-described embodiment, as a cutting method by laser, after slicing by wire saw, the laser is irradiated from the direction of the surface of the wheel-milling process to the inside of the wafer-shaped workpiece, A method of forming an internal reforming layer in a direction parallel to its main plane and peeling the wafer along the internal reforming layer. The position where the internal modified layer is formed is a depth of 1/2 of the thickness of the workpiece before laser irradiation in the first embodiment, and a depth of 1/3 of the thickness of the workpiece before laser irradiation in the second embodiment. In the first embodiment, a laser beam is irradiated on an arbitrary sheet-side surface of a workpiece, and one wafer is peeled to divide the workpiece into two pieces. In the second embodiment, by first irradiating a laser on an arbitrary side of the workpiece, a wafer is peeled off, and then, irradiating the laser on the opposite side of the surface under the same conditions to peel off a wafer. Divide the workpiece into three pieces.
於表1顯示經匯整的比較例、實施例一、二的結果。Table 1 shows the results of the comparative examples, examples 1 and 2 after being assembled.
【表1】
如自表1所知，自相同長度的晶棒所得的晶圓的片數，相對於比較例，實施例一增加了6.4%，實施例二增加了8.5%。再者，實施例一、二之中，加工所致的變成切屑的矽量，相對於比較例，個別消減了34.7%、45.4%。再者，實施例一、二之中，並未發現晶棒的切斷時間的大幅度的增加。As known from Table 1, the number of wafers obtained from ingots of the same length is increased by 6.4% in Example 1 and 8.5% in Example 2 relative to the comparative example. In addition, in Examples 1 and 2, the amount of silicon that became chips due to processing was reduced by 34.7% and 45.4% compared to the comparative example. Furthermore, in Examples 1 and 2, no significant increase in the cutting time of the ingot was found.
此外，本發明並不限定於上述的實施例。上述實施例為舉例說明，凡具有與本發明的申請專利範圍所記載之技術思想實質上同樣之構成，產生相同的功效者，不論為何物皆包含在本發明的技術範圍內。In addition, the present invention is not limited to the above-mentioned embodiments. The above-mentioned embodiments are examples, and anyone who has substantially the same structure as the technical idea described in the patent application scope of the present invention and produces the same effect, regardless of what is included in the technical scope of the present invention.
101‧‧‧線鋸101‧‧‧Wire saw
102‧‧‧鋼線102‧‧‧Steel wire
103‧‧‧附溝滾筒103‧‧‧Drum with roller
104‧‧‧機構104‧‧‧Institution
104’‧‧‧機構104’‧‧‧ Institution
105‧‧‧機構105‧‧‧Institution
106‧‧‧機構106‧‧‧Institution
107‧‧‧捲線器107‧‧‧Reel
107’‧‧‧捲線器107’‧‧‧Reel
108‧‧‧噴嘴108‧‧‧ nozzle
109‧‧‧漿液109‧‧‧Slurry
110‧‧‧驅動用馬達110‧‧‧Drive motor
W‧‧‧半導體單晶棒 W‧‧‧Semiconductor single crystal rod
第1圖係本發明的晶圓的製造方法的一範例的流程圖。 第2圖係一般的線鋸的一範例的示意圖。 第3圖係一般的晶圓的製造方法的一範例的流程圖。FIG. 1 is a flowchart of an example of the wafer manufacturing method of the present invention. FIG. 2 is a schematic diagram of an example of a general wire saw. FIG. 3 is a flowchart of an example of a general wafer manufacturing method.
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