TW201824968A - Manufacturing method for combining metal with ceramic substrate - Google Patents
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Abstract
Description
本發明是有關一種製造方法，尤指一種結合金屬與陶瓷基板的製造方法。The present invention relates to a manufacturing method, and more particularly to a method of manufacturing a combined metal and ceramic substrate.
隨著功率元件逐漸縮小單體尺寸以及提升功率下，為達到高散熱性能對於銅層厚度要求逐漸提高。相同的微小化設計下對於微小化的線距要求也越來越高。因此如何達到高厚度銅層以及較小線距的基板變得相當重要。As the power components are gradually reduced in size and power is increased, the thickness of the copper layer is gradually increased in order to achieve high heat dissipation performance. Under the same miniaturization design, the line spacing requirement for miniaturization is also getting higher and higher. Therefore, how to achieve a high-thickness copper layer and a small pitch substrate becomes quite important.
如圖1所示，為習知結合金屬與陶瓷基板的流程方塊圖。現有複合基板的製造方法之步驟包括：步驟a，提供一陶瓷基板；步驟b，提供形成有一氧化層的一金屬載板；步驟c，將形成有該氧化層的該金屬載板貼附該陶瓷基板的一表面並進行高溫燒結，使兩者結合為一複合基板；以及步驟d，蝕刻該金屬載板的另一表面，使該金屬載板與該氧化層形成複數線路，如此使上述複合基板作為例如微小化高效能功率模組的主要散熱基板，並作為線路的導通使用。As shown in FIG. 1, it is a flow block diagram of a conventional combination of a metal and a ceramic substrate. The steps of the method for manufacturing a conventional composite substrate include: step a, providing a ceramic substrate; step b, providing a metal carrier plate forming an oxide layer; and step c, attaching the metal carrier plate on which the oxide layer is formed to the ceramic substrate a surface of the substrate is sintered at a high temperature to combine the two into a composite substrate; and in step d, the other surface of the metal carrier is etched to form a plurality of lines between the metal carrier and the oxide layer, so that the composite substrate is As a main heat sink substrate for miniaturizing high-efficiency power modules, for example, it is used as a line.
然而上述的製造方法中，由於陶瓷基板與金屬載板彼此的熱膨脹係數（Coefficient of thermal expansion；CTE）差異大(若金屬載板為銅片，CTE為16.5；陶瓷基板的CTE則為3)。當經過上述步驟c時，金屬載板容易產生熱變形的內應力，進一步地在步驟d製作線路時，複合基板會產生不規則的板翹、彎曲等基板品質異常的問題。再者，若所述銅片厚度過高的情況下，於蝕刻製成程時銅厚與線距依舊被限制在1:1，因此製程上會隨著銅厚越厚之關係導致線距隨之越大，因此無法製作較小的線距，無法滿足市場需求。However, in the above manufacturing method, the difference in coefficient of thermal expansion (CTE) between the ceramic substrate and the metal carrier is large (if the metal carrier is a copper sheet, the CTE is 16.5; the CTE of the ceramic substrate is 3). When the above step c is passed, the metal carrier is liable to generate internal stress of thermal deformation, and further, when the wiring is produced in the step d, the composite substrate may have an problem of abnormal substrate quality such as irregular warpage or bending. Moreover, if the thickness of the copper sheet is too high, the copper thickness and the line pitch are still limited to 1:1 during the etching process, so the process will follow the relationship of the thicker copper thickness. The larger the size, the smaller the line spacing cannot be made and the market demand cannot be met.
有鑒於此，本發明人遂針對上述現有技術，特潛心研究並配合學理的運用，盡力解決上述之問題點，即成為本發明人改良之目標。In view of the above, the inventors of the present invention have made great efforts to solve the above problems in view of the above-mentioned prior art, and have made great efforts to solve the above problems, which has become the object of improvement of the present inventors.
本發明目的之一，在於提供一種解決高溫燒結產生不規則板翹、彎曲問題的結合金屬與陶瓷基板的製造方法。One of the objects of the present invention is to provide a method for manufacturing a bonded metal and ceramic substrate which solves the problem of irregular plate warpage and bending caused by high temperature sintering.
為達上述目的，本發明提供一種結合金屬與陶瓷基板的製造方法，包括下列步驟：提供一陶瓷基板；提供一金屬載板；金屬載板經一機械加工形成一線路段，線路段包含間隔的複數凹槽線路及連接各凹槽線路的複數連接段；將金屬載板的一表面形成一氧化層；將形成氧化層的金屬載板貼合陶瓷基板，並經高溫共燒以接合成一金屬陶瓷複合基材；以及清除該些連接段，以形成線路段。To achieve the above object, the present invention provides a method for fabricating a combined metal and ceramic substrate, comprising the steps of: providing a ceramic substrate; providing a metal carrier; the metal carrier is mechanically formed to form a line segment, and the line segment includes a plurality of intervals a groove line and a plurality of connecting segments connecting the groove lines; forming an oxide layer on one surface of the metal carrier; bonding the metal carrier plate forming the oxide layer to the ceramic substrate, and co-firing at high temperature to join into a cermet a composite substrate; and removing the connecting segments to form a line segment.
在清除該些連接段的方式中包含以該機械加工或蝕刻方式清除，其中機械加工製成或清除該些連接段的方法包含洗削、放電加工、沖壓、裁切、磨削或刨削。機械加工製成該些線路的線距係介於0.15至0.3公釐，且該些凹槽線路的內壁面具有平整的切削痕跡。此製程所使用的金屬載板(銅片)厚度可達介於0.15至1公釐。也就是說，此製程的金屬載板厚度與線距比，最大可達1比0.2(即1公釐的銅片厚度比0.2公釐的線距)。In the manner of removing the connecting segments, the machining or etching is removed, wherein the method of machining or cleaning the connecting segments comprises washing, electrical discharge machining, stamping, cutting, grinding or planing. The line spacing of the wires made by the machine is between 0.15 and 0.3 mm, and the inner wall faces of the groove lines have flat cutting marks. The metal carrier (copper) used in this process can be as thick as 0.15 to 1 mm. That is to say, the metal carrier thickness and the line pitch ratio of the process can be up to 1 to 0.2 (i.e., the thickness of the 1 mm copper sheet is 0.2 mm).
在一較佳實施例中，將金屬載板的表面形成一氧化層的步驟中，係在不具有該些連接段的金屬載板的表面上形成，其中該些凹槽線路底端的該些連接段並未形成氧化層。也就是說，各連接段是相對位於陶瓷基板的上端。In a preferred embodiment, the step of forming the surface of the metal carrier into an oxide layer is formed on the surface of the metal carrier that does not have the connection segments, wherein the connections at the bottom ends of the recess lines The oxide layer was not formed in the segment. That is to say, each connecting segment is located opposite the upper end of the ceramic substrate.
在另一不同的實施例中，將金屬載板的表面形成一氧化層的步驟中，係在具有該些連接段的金屬載板的表面上形成。也就是說，各連接段是間隔著氧化層而分別間接接觸陶瓷基板的表面。不論各連接段位於金屬載板的上端或下端，各凹槽線路的內壁面均具有平整的切削痕跡。In a different embodiment, the step of forming the surface of the metal carrier into an oxide layer is formed on the surface of the metal carrier having the connecting segments. That is, each of the connection segments is a surface that is indirectly in contact with the ceramic substrate with an oxide layer interposed therebetween. Regardless of whether each connecting section is located at the upper or lower end of the metal carrier, the inner wall surface of each grooved line has a flat cutting mark.
由於陶瓷基板與金屬載板係經機械加工製成具有該些凹槽線路的該些連接段，即使經過高溫共燒以接合成金屬陶瓷複合基材，金屬載板可能產生的熱變形內應力也能夠有效透過該些凹槽線路的線距釋放其內應力或膨脹抵消，而大幅降低或解決不規則板翹、彎曲或其他金屬陶瓷複合基材品質不佳等問題。Since the ceramic substrate and the metal carrier are mechanically processed to form the connecting portions having the groove lines, even after high-temperature co-firing to join into the cermet composite substrate, the thermal deformation internal stress that the metal carrier can generate can also Effectively transmitting the internal stress or expansion offset through the line spacing of the groove lines, and greatly reducing or solving the problems of irregular plate warping, bending or other cermet composite substrate quality.
有關本發明之詳細說明及技術內容，配合圖式說明如下，然而所附圖式僅提供參考與說明用，並非用來對本發明加以限制者。The detailed description and technical content of the present invention are set forth in the accompanying drawings.
如圖2A至2E及圖3所示，本發明提供一種結合金屬與陶瓷基板的製造方法，包括下列步驟：步驟160，提供一陶瓷基板100；步驟170，提供一金屬載板110；步驟180，該金屬載板110經一機械加工形成一線路段120，該線路段120包含間隔的複數凹槽線路122及連接各該凹槽線路122的複數連接段124；步驟190，將金屬載板110的一表面形成一氧化層140；步驟200，將形成該氧化層140的該金屬載板110貼合陶瓷基板100表面，並經高溫共燒以接合成一金屬陶瓷複合基材150；以及步驟210，清除該些連接段120，以形成該線路段120。As shown in FIGS. 2A to 2E and FIG. 3, the present invention provides a method of fabricating a combined metal and ceramic substrate, comprising the steps of: step 160, providing a ceramic substrate 100; step 170, providing a metal carrier 110; The metal carrier 110 is mechanically processed to form a line segment 120. The line segment 120 includes a plurality of spaced groove lines 122 and a plurality of connecting segments 124 connecting the groove lines 122. Step 190, a metal carrier 110 Forming an oxide layer 140 on the surface; step 200, bonding the metal carrier 110 forming the oxide layer 140 to the surface of the ceramic substrate 100, and co-firing at a high temperature to bond into a cermet composite substrate 150; and step 210, removing The connecting segments 120 form the line segment 120.
在步驟210中，清除線路段120的該些連接段124的方式包含以機械加工或蝕刻方式清除。此外，在步驟180中，以機械加工製成該些連接段124的方法，或是在步驟210中的清除該些連接段124的方法同樣包含洗削、放電加工、沖壓、裁切、磨削、刨削、噴砂、雷射或其他適合方式，並不限定。機械加工製成該些線路130的線距較佳可介於0.15至0.3公釐，且該些凹槽線路122的內壁面具有平整的切削痕跡。此製程所使用的金屬載板(銅片)厚度可達介於0.15至1公釐。也就是說，此製程的金屬載板厚度與線距比，最大可達1比0.2(即1公釐的銅片厚度比0.2公釐的線距)。In step 210, the manner in which the plurality of connection segments 124 of the line segment 120 are removed includes machining or etching. In addition, in step 180, the method of machining the connecting segments 124 is performed, or the method of clearing the connecting segments 124 in step 210 also includes washing, electric discharge machining, stamping, cutting, grinding. , planing, sand blasting, laser or other suitable means are not limited. The line spacing for machining the lines 130 is preferably between 0.15 and 0.3 mm, and the inner wall faces of the groove lines 122 have flat cutting marks. The metal carrier (copper) used in this process can be as thick as 0.15 to 1 mm. That is to say, the metal carrier thickness and the line pitch ratio of the process can be up to 1 to 0.2 (i.e., the thickness of the 1 mm copper sheet is 0.2 mm).
在如圖2A至圖2E的實施例中，在此所述的金屬載板110的材料較佳包含銅片或其合金。在本具體實施例中，將金屬載板110的表面形成一氧化層的步驟190中，較佳係以在不具有該些連接段124的金屬載板110的表面上形成，其中該些凹槽線路122底端的該些連接段124並未形成氧化層140。也就是說，暴露各線距(圖略)的各連接段124並未形成氧化層140，故當在清除各連接段124的步驟210中，並不需要進一步清除氧化層140，而使本實施例具有省時、省工的優點。In the embodiment of Figures 2A through 2E, the material of the metal carrier 110 described herein preferably comprises a copper sheet or alloy thereof. In the embodiment, the step 190 of forming the surface of the metal carrier 110 into an oxide layer is preferably formed on the surface of the metal carrier 110 having the connecting segments 124, wherein the grooves are formed. The connecting segments 124 at the bottom end of the line 122 do not form an oxide layer 140. That is to say, each of the connection segments 124 exposing the respective line pitches (not shown) does not form the oxide layer 140. Therefore, in the step 210 of removing the connection segments 124, the oxide layer 140 is not required to be further removed, so that the embodiment is It has the advantages of saving time and labor.
此外，線路段120的各凹槽線路122彼此間隔的佈設於金屬載板110上，且各連接段124分別位於各凹槽線路120的底端。在本實施例中，各連接段124較佳分別位於相對陶瓷基板100上方，並以上述的機械加工方式清除即可完成線路段120。In addition, the groove lines 122 of the line segment 120 are spaced apart from each other on the metal carrier 110, and the connection segments 124 are respectively located at the bottom ends of the groove lines 120. In this embodiment, each of the connecting segments 124 is preferably located above the opposite ceramic substrate 100, and is removed by the above-mentioned mechanical processing to complete the line segment 120.
然而在如圖4A至圖4C所示的實施例中，將金屬載板110的表面形成一氧化層的步驟190中，亦可在具有該些連接段124的金屬載板110的表面上形成，也就是以具有該些連接段124的金屬載板110表面貼合陶瓷基板100的表面。因此在本實施例中，步驟210中，清除該些連接段124，則可形成/完成線路段120。However, in the embodiment shown in FIG. 4A to FIG. 4C, in the step 190 of forming the surface of the metal carrier 110 into an oxide layer, it may also be formed on the surface of the metal carrier 110 having the connecting segments 124. That is, the surface of the ceramic substrate 100 is bonded to the surface of the metal carrier 110 having the connecting segments 124. Therefore, in this embodiment, in step 210, the connection segments 124 are cleared, and the line segment 120 can be formed/completed.
在本實施例中，各連接段124較佳間隔著氧化層140而分別間接接觸陶瓷基板100的表面，故須深入各凹槽線路124並以上述的機械加工方式清除即可完成線路段120。然而不論各連接段124位於金屬載板110的上端或下端，各凹槽線路124的內壁面均具有平整的切削痕跡130。In the present embodiment, each of the connecting segments 124 is preferably indirectly in contact with the surface of the ceramic substrate 100 via the oxide layer 140. Therefore, the line segments 120 must be completed by deepening the respective groove lines 124 and being removed by the above-described mechanical processing. However, regardless of whether each connecting section 124 is located at the upper or lower end of the metal carrier 110, the inner wall surface of each groove line 124 has a flat cutting mark 130.
在此須說明的是，由於陶瓷基板100與金屬載板110係經機械加工製成具有該些凹槽線路122及的該些連接段124(即線路段120)，即使經過步驟200的高溫共燒以接合成金屬陶瓷複合基材150，金屬載板110可能產生的熱變形內應力也能夠有效透過該些凹槽線路122的線距釋放其內應力或膨脹抵消，而大幅降低或解決不規則板翹、彎曲或其他金屬陶瓷複合基材150品質不佳等問題。It should be noted that, since the ceramic substrate 100 and the metal carrier 110 are mechanically processed to form the connecting lines 124 and the connecting segments 124 (ie, the line segments 120), even after the high temperature of step 200 After firing to join into the cermet composite substrate 150, the thermal deformation internal stress that may be generated by the metal carrier 110 can also effectively cancel the internal stress or expansion of the groove lines 122 to cancel the internal stress or expansion, thereby greatly reducing or solving the irregular plate. Problems such as poor quality of warp, bend or other cermet composite substrate 150.
綜上所述，本文於此所揭示的實施例應被視為用以說明本發明，而非用以限制本發明。本發明的範圍應由後附申請專利範圍所界定，並涵蓋其合法均等物，並不限於先前的描述。In the above, the embodiments disclosed herein are to be considered as illustrative of the invention and not to limit the invention. The scope of the present invention is defined by the scope of the appended claims, and the legal equivalents thereof are not limited to the foregoing description.
100‧‧‧陶瓷基板100‧‧‧Ceramic substrate
110‧‧‧金屬載板110‧‧‧Metal carrier
120‧‧‧線路段120‧‧‧ line segment
122‧‧‧凹槽線路122‧‧‧ Groove line
124‧‧‧連接段124‧‧‧Connection section
130‧‧‧切削痕跡130‧‧‧ cutting marks
140‧‧‧氧化層140‧‧‧Oxide layer
150‧‧‧金屬陶瓷複合基材150‧‧‧ceramic composite substrate
160~210‧‧‧步驟160~210‧‧‧Steps
圖1為繪示習知結合金屬與陶瓷基板的流程方塊圖。FIG. 1 is a block diagram showing the flow of a conventional bonded metal and ceramic substrate.
圖2A-2E為繪示本發明結合金屬與陶瓷基板的製造方法的結構剖視圖。2A-2E are cross-sectional views showing the structure of a method of manufacturing a bonded metal and ceramic substrate of the present invention.
圖3為繪示本發明結合金屬與陶瓷基板的製造方法的流程方塊圖。3 is a flow block diagram showing a method of fabricating a metal and ceramic substrate in accordance with the present invention.
圖4A-4C為繪示本發明另一結合金屬與陶瓷基板的製造方法的結構剖視圖。4A-4C are cross-sectional views showing the structure of another method of manufacturing a metal and ceramic substrate according to the present invention.
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| TWI749928B (en) * | 2020-12-01 | 2021-12-11 | 合晶科技股份有限公司 | Composite substrate structure and method for manufacturing the same |
| TWI795012B (en) * | 2021-10-05 | 2023-03-01 | 艾姆勒科技股份有限公司 | Substrate structure having thick conductive layer and method for etching the same |
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| TWI335792B (en) * | 2007-02-09 | 2011-01-01 | Univ Nat Taiwan | Method of manufacturing ceramic/metal composite structure |
| TW201729654A (en) * | 2011-11-28 | 2017-08-16 | 綠點高新科技股份有限公司 | Fabricating a conductive trace structure and substrate having the structure |
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| TWI749928B (en) * | 2020-12-01 | 2021-12-11 | 合晶科技股份有限公司 | Composite substrate structure and method for manufacturing the same |
| TWI795012B (en) * | 2021-10-05 | 2023-03-01 | 艾姆勒科技股份有限公司 | Substrate structure having thick conductive layer and method for etching the same |
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