TW201824219A - Display device and electronic device include a signal generation circuit, a first gate driver, a second gate driver, and a second display section stopping the first scanning signal outputted by the first gate driver and the second scanning signal outputted by the second gate driver, etc. - Google Patents

Abstract

The present invention provides a novel display device and electronic device. The display device includes a signal generation circuit, a first gate driver, a second gate driver, and a display section having pixels. The configuration of pixel includes a liquid crystal element, a light-emitting element, a first pixel circuit which controls the display of the liquid crystal element, and a second pixel circuit which controls the display of the light-emitting element. The display section comprises a first display section and a second display section. The first gate driver has a function of outputting a first scanning signal to the first pixel circuit. The second gate driver has a function of outputting the second scanning signal to the second pixel circuit. The first display section has a function of outputting a first scan signal and a second scan signal from the first gate driver and the second gate driver respectively for proceeding display. The second display section has a function of stopping the first scanning signal outputted by the first gate driver and the second scanning signal outputted by the second gate driver for proceeding display.

Description

顯示裝置及電子裝置  Display device and electronic device  

本發明的一個實施方式係關於一種顯示裝置及電子裝置。 One embodiment of the present invention relates to a display device and an electronic device.

具備顯示裝置的電子裝置已經普及。該電子裝置在攜帶地使用時，作為電源使用二次電池。為了延長二次電池可以供應電源的時間，顯示裝置的低功耗化是有效的。 Electronic devices equipped with display devices have become popular. When the electronic device is used in a portable manner, a secondary battery is used as a power source. In order to extend the time during which the secondary battery can supply power, the power consumption of the display device is effective.

為了實現示裝置的低功耗化，在專利文獻1中提出了組合反射型元件與發光型元件的顯示裝置(專利文獻1)。藉由在明亮環境下使用反射型元件並在昏暗環境下使用發光型元件，可以提供一種實現不依賴於外光環境的良好的顯示品質及低功耗化的顯示裝置。 In order to achieve a reduction in power consumption of the display device, Patent Document 1 proposes a display device in which a reflective element and an illuminating element are combined (Patent Document 1). By using a reflective element in a bright environment and using an illuminating element in a dim environment, it is possible to provide a display device that achieves good display quality and low power consumption without depending on the external light environment.

已提出將氧化物半導體電晶體(Oxide Semiconductor電晶體，下面稱為“OS電晶體”)用於液晶顯示裝置及有機EL(電致發光)顯示裝置等顯示裝置的技術。OS電晶體的關態電流(off-state current)非常小，因此公開了利用該特徵的如下技術：藉由減少顯示靜態影像時的更新頻率，降低液晶顯示裝置及有機EL顯示裝置的功耗(專利文獻2、專利文獻3)。注意，在本說明書中，將上述降低顯示裝置的功耗的技術稱為“Idling stop”或“IDS驅動”。 A technique of using an oxide semiconductor transistor (Oxide Semiconductor transistor, hereinafter referred to as "OS transistor") for a display device such as a liquid crystal display device or an organic EL (electroluminescence) display device has been proposed. Since the off-state current of the OS transistor is very small, a technique using the feature is disclosed in which the power consumption of the liquid crystal display device and the organic EL display device is reduced by reducing the update frequency when the still image is displayed ( Patent Document 2 and Patent Document 3). Note that in the present specification, the above-described technique of reducing the power consumption of the display device is referred to as "Idling stop" or "IDS drive".

[專利文獻1]日本專利申請公開第2003-157026號公報 [Patent Document 1] Japanese Patent Application Publication No. 2003-157026

[專利文獻2]日本專利申請公開第2011-141522號公報 [Patent Document 2] Japanese Patent Application Laid-Open No. 2011-141522

[專利文獻3]日本專利申請公開第2011-141524號公報 [Patent Document 3] Japanese Patent Application Laid-Open No. 2011-141524

IDS驅動由於間歇性地更新資料，所以在實現低功耗化上是有效的。然而，減少資料更新的頻率，因此方便性有可能會不高。為了提高方便性，對需要更新資料的部分的顯示進行更新的結構是重要的。 Since the IDS driver intermittently updates the data, it is effective in achieving low power consumption. However, the frequency of data updates is reduced, so the convenience may not be high. In order to improve convenience, it is important to update the structure of the display of the portion where the data needs to be updated.

本發明的一個實施方式的目的之一是提供一種功耗低且方便性優異的顯示裝置及電子裝置。本發明的一個實施方式的目的之一是提供一種即使使用在屋外或屋內也可見性優異的顯示裝置及電子裝置。 One of the objects of one embodiment of the present invention is to provide a display device and an electronic device which are low in power consumption and excellent in convenience. One of the objects of one embodiment of the present invention is to provide a display device and an electronic device which are excellent in visibility even when used outdoors or indoors.

上述目的的記載不妨礙其他目的的存在。本發明的一個實施方式並不需要實現所有上述目的。另外，可以從說明書、圖式、申請專利範圍等的記載得知並衍生上述以外的目的。 The above description of the purpose does not prevent the existence of other purposes. One embodiment of the present invention does not need to achieve all of the above objects. In addition, the above objects can be known and derived from the descriptions of the specification, drawings, and patent claims.

本發明的一個實施方式是一種顯示裝置，包括信號生成電路、第一閘極驅動器、第二閘極驅動器以及具有像素的顯示部，其中，像素包括液晶元件、發光元件、控制液晶元件的顯示的第一像素電路以及控制發光元件的顯示的第二像素電路，顯示部包括第一顯示部及第二顯示部，第一閘極驅動器具有對第一像素電路輸出第一掃描信號的功能，第二閘極驅動器具有對第二像素電路輸出第二掃描信號的功能，第一顯示部具有分別從第一閘極驅動器及第二閘極驅動器輸出第一掃描信號及第二掃描信號而進行顯示的功能，第二顯示部具有停止第一閘極驅動器所輸出的第一掃描信號及第二閘極驅動器所輸出的第二掃描信號而進行顯示的功能。 One embodiment of the present invention is a display device including a signal generating circuit, a first gate driver, a second gate driver, and a display portion having pixels, wherein the pixel includes a liquid crystal element, a light emitting element, and a display for controlling the liquid crystal element a first pixel circuit and a second pixel circuit for controlling display of the light emitting element, the display portion includes a first display portion and a second display portion, the first gate driver having a function of outputting a first scan signal to the first pixel circuit, and second The gate driver has a function of outputting a second scan signal to the second pixel circuit, and the first display portion has a function of outputting the first scan signal and the second scan signal from the first gate driver and the second gate driver for display. The second display unit has a function of stopping display of the first scan signal output by the first gate driver and the second scan signal output by the second gate driver.

在本發明的一個實施方式的顯示裝置中，較佳的是，信號生成電 路具有輸出對從第一閘極驅動器向顯示部的第一掃描信號的輸出或停止進行控制的信號的功能以及輸出對從第二閘極驅動器向任意行的像素的第二掃描信號的輸出或停止進行控制的信號的功能。 In the display device according to the embodiment of the present invention, preferably, the signal generating circuit has a function of outputting a signal for controlling output or stop of the first scan signal from the first gate driver to the display portion, and an output pair. The function of outputting or stopping the control of the second scan signal from the second gate driver to the pixels of any row.

本發明的一個實施方式是一種顯示裝置，其中較佳的是；第一像素電路及第二像素電路包括電晶體，該電晶體在半導體層中具有金屬氧化物。 One embodiment of the present invention is a display device, wherein preferably, the first pixel circuit and the second pixel circuit include a transistor having a metal oxide in the semiconductor layer.

本發明的一個實施方式是一種顯示裝置，其中較佳的是：第一像素電路所包括的電晶體與第二像素電路所包括的電晶體設置在同一層中。 One embodiment of the present invention is a display device in which it is preferable that a transistor included in the first pixel circuit is disposed in the same layer as a transistor included in the second pixel circuit.

本發明的一個實施方式是一種顯示裝置，其中較佳的是：液晶元件包括設置有開口的反射電極，並具有由反射電極反射外光進行顯示的功能，發光元件具有經過開口發射光而進行顯示的功能。 One embodiment of the present invention is a display device, wherein preferably, the liquid crystal element includes a reflective electrode provided with an opening, and has a function of reflecting external light for reflection by the reflective electrode, and the light emitting element has a function of emitting light through the opening for display. The function.

本發明的一個實施方式是一種電子裝置，包括顯示裝置以及外殼，該顯示裝置包括信號生成電路、第一閘極驅動器、第二閘極驅動器以及具有像素的顯示部，該像素包括液晶元件、發光元件、控制液晶元件的顯示的第一像素電路以及控制發光元件的顯示的第二像素電路，顯示部包括第一顯示部、第二顯示部以及第三顯示部，第一閘極驅動器具有對第一顯示部至第三顯示部所包括的像素的第一像素電路輸出第一掃描信號的功能，第二閘極驅動器具有對第一顯示部至第三顯示部所包括的像素的第二像素電路輸出第二掃描信號的功能，第一顯示部是在平面上顯示影像的區域，第二顯示部是與第一顯示部相鄰且在曲面上顯示影像的區域，第三顯示部是與第二顯示部相鄰且在平面上顯示影像的區域，第一顯示部及第二顯示部具有分別從第一閘極驅動器及第二閘極驅動器輸出第一掃描信號及第二掃描信號而進行顯示的功能，第三顯示部具有停止第一閘極驅動器所輸出的第一掃描信號及 第二閘極驅動器所輸出的第二掃描信號而進行顯示的功能。 One embodiment of the present invention is an electronic device including a display device and a housing, the display device including a signal generation circuit, a first gate driver, a second gate driver, and a display portion having pixels including a liquid crystal element and illumination a first pixel circuit for controlling display of the liquid crystal element and a second pixel circuit for controlling display of the light emitting element, the display portion including a first display portion, a second display portion, and a third display portion, the first gate driver having a pair a first pixel circuit of a pixel included in the display portion to the third display portion outputs a function of the first scan signal, and the second gate driver has a second pixel circuit for pixels included in the first to third display portions a function of outputting a second scan signal, the first display portion is an area for displaying an image on a plane, and the second display portion is an area adjacent to the first display portion and displaying an image on a curved surface, and the third display portion is a second An area in which the display portion is adjacent to the image and the image is displayed on the plane, and the first display portion and the second display portion have the first gate driver and the second The pole driver outputs a first scan signal and a second scan signal for display, and the third display unit has a first scan signal outputted by the first gate driver and a second scan signal output by the second gate driver. The function of displaying.

在本發明的一個實施方式中，較佳為如下顯示裝置：其中，信號生成電路具有輸出對從第一閘極驅動器向顯示部的第一掃描信號的輸出或停止進行控制的信號的功能以及輸出對從第二閘極驅動器向任意行的像素的第二掃描信號的輸出或停止進行控制的信號的功能。 In one embodiment of the present invention, preferably, the display device has a function of outputting a signal for outputting a signal for controlling output or stop of a first scan signal from the first gate driver to the display portion, and an output. A function of a signal for controlling the output or stop of the second scan signal from the second gate driver to the pixels of an arbitrary row.

在本發明的一個實施方式中，較佳的是，外殼包括第一外殼、第二外殼以及第三外殼，第一顯示部設置於第一外殼中，第二顯示部設置於第二外殼中，第三顯示部設置於第三外殼中，第二外殼具有比第一外殼及第三外殼薄的結構。 In an embodiment of the present invention, the housing includes a first housing, a second housing, and a third housing. The first display portion is disposed in the first housing, and the second display portion is disposed in the second housing. The third display portion is disposed in the third outer casing, and the second outer casing has a thinner structure than the first outer casing and the third outer casing.

注意，本發明的其他實施方式記載於下面所述的實施方式中的說明及圖式中。 Note that other embodiments of the present invention are described in the description and drawings of the embodiments described below.

根據本發明的一個實施方式，可以提供一種功耗低且方便性優異的顯示裝置及電子裝置。根據本發明的一個實施方式，可以提供一種即使使用在屋外或屋內也可見性優異的顯示裝置及電子裝置。 According to an embodiment of the present invention, it is possible to provide a display device and an electronic device which are low in power consumption and excellent in convenience. According to an embodiment of the present invention, it is possible to provide a display device and an electronic device which are excellent in visibility even when used outdoors or indoors.

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PWC3‧‧‧脈衝寬度控制信號 PWC3‧‧‧ pulse width control signal

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10‧‧‧顯示裝置 10‧‧‧ display device

11‧‧‧像素電路 11‧‧‧Pixel Circuit

12‧‧‧反射光 12‧‧‧ Reflected light

13‧‧‧顯示部 13‧‧‧Display Department

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15‧‧‧像素電路 15‧‧‧pixel circuit

16‧‧‧光 16‧‧‧Light

17‧‧‧像素電路 17‧‧‧Pixel circuit

18‧‧‧顯示部 18‧‧‧Display Department

19‧‧‧像素 19‧‧ ‧ pixels

20‧‧‧閘極驅動器 20‧‧‧gate driver

21‧‧‧開口 21‧‧‧ openings

22‧‧‧閘極驅動器 22‧‧‧ gate driver

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24‧‧‧源極驅動器 24‧‧‧Source Driver

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26‧‧‧信號生成電路 26‧‧‧Signal generation circuit

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30‧‧‧圖框記憶體 30‧‧‧ Frame memory

31‧‧‧源極驅動器IC 31‧‧‧Source Driver IC

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34‧‧‧控制電路 34‧‧‧Control circuit

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40‧‧‧電子裝置 40‧‧‧Electronic devices

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231‧‧‧半導體層 231‧‧‧Semiconductor layer

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312‧‧‧液晶 312‧‧‧LCD

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340‧‧‧液晶元件 340‧‧‧Liquid crystal components

351‧‧‧基板 351‧‧‧Substrate

360‧‧‧發光元件 360‧‧‧Lighting elements

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364‧‧‧電路 364‧‧‧ Circuitry

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372‧‧‧FPC 372‧‧‧FPC

400‧‧‧顯示裝置 400‧‧‧ display device

410‧‧‧像素 410‧‧ ‧ pixels

451‧‧‧開口 451‧‧‧ openings

501C‧‧‧絕緣膜 501C‧‧‧Insulation film

505‧‧‧接合層 505‧‧‧ joint layer

512B‧‧‧導電膜 512B‧‧‧Electrical film

520‧‧‧功能層 520‧‧‧ functional layer

521‧‧‧絕緣膜 521‧‧‧Insulation film

521A‧‧‧絕緣膜 521A‧‧‧Insulation film

521B‧‧‧絕緣膜 521B‧‧‧Insulation film

522‧‧‧連接部 522‧‧‧Connecting Department

528‧‧‧絕緣膜 528‧‧‧Insulation film

530‧‧‧像素電路 530‧‧‧pixel circuit

550‧‧‧顯示元件 550‧‧‧ display components

551‧‧‧電極 551‧‧‧electrode

552‧‧‧電極 552‧‧‧electrode

553‧‧‧層 553‧‧ ‧

560‧‧‧光學元件 560‧‧‧Optical components

565‧‧‧覆蓋膜 565‧‧ Cover film

570‧‧‧基板 570‧‧‧Substrate

580‧‧‧透鏡 580‧‧‧ lens

591A‧‧‧開口 591A‧‧‧ openings

700‧‧‧電路 700‧‧‧ circuits

700TP3‧‧‧輸入輸出面板 700TP3‧‧‧I/O panel

701‧‧‧電晶體 701‧‧‧Optoelectronics

702‧‧‧像素 702‧‧ ‧ pixels

709‧‧‧電晶體 709‧‧‧Optoelectronics

710‧‧‧電路 710‧‧‧ Circuit

711‧‧‧電晶體 711‧‧‧Optoelectronics

713‧‧‧電晶體 713‧‧‧Optoelectronics

720‧‧‧功能層 720‧‧‧ functional layer

721‧‧‧電晶體 721‧‧‧Optoelectronics

723‧‧‧電晶體 723‧‧‧Optoelectronics

730‧‧‧電路 730‧‧‧ Circuitry

750‧‧‧顯示元件 750‧‧‧ display components

751‧‧‧電極 751‧‧‧electrode

751H‧‧‧區域 751H‧‧‧Area

752‧‧‧電極 752‧‧‧electrode

753‧‧‧層 753‧‧ layers

770‧‧‧基板 770‧‧‧Substrate

770D‧‧‧功能膜 770D‧‧‧ functional film

770P‧‧‧功能膜 770P‧‧‧ functional film

770PA‧‧‧相位差薄膜 770PA‧‧‧ phase difference film

770PB‧‧‧偏振層 770PB‧‧‧ polarizing layer

771‧‧‧絕緣膜 771‧‧‧Insulation film

5001‧‧‧外殼 5001‧‧‧shell

5002‧‧‧外殼 5002‧‧‧ Shell

5003‧‧‧顯示裝置 5003‧‧‧ display device

5005‧‧‧麥克風 5005‧‧‧ microphone

5006‧‧‧揚聲器 5006‧‧‧Speakers

5007‧‧‧操作鍵 5007‧‧‧ operation keys

5008‧‧‧觸控筆 5008‧‧‧ stylus

5201‧‧‧外殼 5201‧‧‧Shell

5202‧‧‧顯示裝置 5202‧‧‧Display device

5203‧‧‧手錶帶 5203‧‧‧ watch band

5204‧‧‧光感測器 5204‧‧‧Light sensor

5205‧‧‧開關 5205‧‧‧Switch

5301‧‧‧外殼 5301‧‧‧Shell

5302‧‧‧外殼 5302‧‧‧Shell

5303‧‧‧顯示裝置 5303‧‧‧Display device

5304‧‧‧光感測器 5304‧‧‧Photosensor

5305‧‧‧光感測器 5305‧‧‧Photosensor

5306‧‧‧開關 5306‧‧‧Switch

5307‧‧‧鉸鏈 5307‧‧‧Hinges

5701‧‧‧外殼 5701‧‧‧Shell

5702‧‧‧顯示裝置 5702‧‧‧Display device

5801‧‧‧方向盤 5801‧‧‧Steering wheel

5802‧‧‧支柱 5802‧‧‧ pillar

5803‧‧‧門 5803‧‧‧

5804‧‧‧前擋風玻璃 5804‧‧‧Front windshield

5805‧‧‧顯示裝置 5805‧‧‧Display device

5901‧‧‧外殼 5901‧‧‧Shell

5902‧‧‧顯示裝置 5902‧‧‧Display device

5903‧‧‧相機 5903‧‧‧ camera

5904‧‧‧揚聲器 5904‧‧‧Speakers

5905‧‧‧按鈕 5905‧‧‧ button

5906‧‧‧外部連接部 5906‧‧‧External connection

5907‧‧‧麥克風 5907‧‧‧Microphone

6000‧‧‧顯示模組 6000‧‧‧Display Module

6001‧‧‧上蓋 6001‧‧‧Upper cover

6002‧‧‧下蓋 6002‧‧‧Undercover

6005‧‧‧FPC 6005‧‧‧FPC

6006‧‧‧顯示面板 6006‧‧‧ display panel

6009‧‧‧框架 6009‧‧‧Frame

6010‧‧‧印刷電路板 6010‧‧‧Printed circuit board

6011‧‧‧電池 6011‧‧‧Battery

6015‧‧‧發光部 6015‧‧‧Lighting Department

6016‧‧‧受光部 6016‧‧‧Receiving Department

6017a‧‧‧導光部 6017a‧‧‧Light Guide

6017b‧‧‧導光部 6017b‧‧‧Light Guide

6018‧‧‧光 6018‧‧‧Light

在圖式中：圖1是示出顯示裝置的結構實例的圖；圖2是示出顯示裝置的結構實例的圖；圖3A和圖3B是示出顯示裝置的像素的結構實例的圖；圖4A和圖4B是說明顯示裝置的結構實例的圖；圖5A和圖5B是說明顯示裝置的工作例子的圖；圖6A和圖6B是說明顯示裝置的工作例子的圖；圖7A和圖7B是說明顯示裝置的工作例子的圖； 圖8A至圖8F是說明顯示裝置的結構實例的示意圖及狀態遷移圖；圖9A至圖9D是示出顯示裝置的工作例子的圖；圖10A至圖10E是示出顯示裝置的工作例子的圖；圖11A至圖11C是說明顯示裝置的結構實例的電路圖；圖12A和圖12B是說明顯示裝置的結構實例的電路圖；圖13是示出顯示裝置的驅動電路的工作例子的圖；圖14A、圖14B1及圖14B2是說明顯示裝置的結構實例的圖；圖15是顯示裝置的電路圖；圖16是說明顯示裝置的結構實例的圖；圖17是說明顯示裝置的結構實例的圖；圖18是說明顯示裝置的結構實例的圖；圖19是說明輸入輸出面板的結構實例的圖；圖20A至圖20D是說明輸入輸出面板的結構實例的圖；圖21是說明樣本的XRD譜的測量結果的圖；圖22A至圖22L是說明樣本的TEM影像及電子繞射圖案的圖；圖23A至圖23C是說明樣本的EDX面分析影像的圖；圖24A和圖24B是說明顯示模組的結構實例的圖；圖25A至圖25F是說明電子裝置的結構實例的圖。 In the drawings: FIG. 1 is a view showing a structural example of a display device; FIG. 2 is a view showing a structural example of a display device; and FIGS. 3A and 3B are diagrams showing a structural example of a pixel of the display device; 4A and FIG. 4B are diagrams illustrating a configuration example of the display device; FIGS. 5A and 5B are diagrams illustrating an operation example of the display device; FIGS. 6A and 6B are diagrams illustrating an operation example of the display device; FIGS. 7A and 7B are diagrams A diagram illustrating a working example of the display device; FIGS. 8A to 8F are schematic diagrams and state transition diagrams illustrating a structural example of the display device; FIGS. 9A to 9D are diagrams showing a working example of the display device; FIGS. 10A to 10E are diagrams A diagram showing a working example of the display device; FIGS. 11A to 11C are circuit diagrams illustrating a configuration example of the display device; FIGS. 12A and 12B are circuit diagrams illustrating a configuration example of the display device; and FIG. 13 is a driving circuit showing the display device. FIG. 14A, FIG. 14B1 and FIG. 14B2 are diagrams illustrating a configuration example of a display device; FIG. 15 is a circuit diagram of the display device; FIG. 16 is a diagram illustrating a configuration example of the display device; Knot FIG. 18 is a diagram illustrating a structural example of a display device; FIG. 19 is a diagram illustrating a configuration example of an input/output panel; FIGS. 20A to 20D are diagrams illustrating a configuration example of an input/output panel; FIG. 22A to FIG. 22L are diagrams illustrating a TEM image and an electronic diffraction pattern of a sample; FIGS. 23A to 23C are diagrams illustrating an EDX surface analysis image of a sample; FIGS. 24A and 24B are diagrams A diagram illustrating a structural example of a display module; and FIGS. 25A to 25F are diagrams illustrating a configuration example of an electronic device.

下面參照圖式對本發明的實施方式進行詳細說明。注意，本發明不侷限於以下說明，所屬技術領域的通常知識者可以很容易地理解一個事實就是其方式及詳細內容在不脫離本發明的精神及其範圍的情況下可以被變換為各種各樣的形式。因此，本發明不應該被解釋為僅限定在以下所示的實施方式所記載的內容中。 Embodiments of the present invention will be described in detail below with reference to the drawings. It is to be noted that the present invention is not limited to the following description, and one of ordinary skill in the art can easily understand the fact that the manner and details can be changed into various kinds without departing from the spirit and scope of the present invention. form. Therefore, the present invention should not be construed as being limited to the contents described in the embodiments shown below.

實施方式1 Embodiment 1

〈顯示裝置的結構〉 <Structure of display device>

圖1是說明顯示裝置的結構的方塊圖。顯示裝置10包括源極驅動器IC31、閘極驅動器20、閘極驅動器22以及顯示部13。 Fig. 1 is a block diagram showing the structure of a display device. The display device 10 includes a source driver IC 31, a gate driver 20, a gate driver 22, and a display portion 13.

顯示部13包括像素19(或子像素)。像素19包括反射型顯示元件的液晶元件LC以及發光型顯示元件的發光元件EL。液晶元件LC具有重疊於發光元件EL的區域。在上述重疊的區域中，具有發光元件EL所發射的光穿過液晶元件LC的結構。發光元件EL及液晶元件LC設置在每一個像素19中。 The display section 13 includes pixels 19 (or sub-pixels). The pixel 19 includes a liquid crystal element LC of a reflective display element and a light emitting element EL of the light emitting type display element. The liquid crystal element LC has a region overlapping the light emitting element EL. In the above overlapping region, there is a structure in which light emitted from the light-emitting element EL passes through the liquid crystal element LC. The light emitting element EL and the liquid crystal element LC are disposed in each of the pixels 19.

在本說明書等中，像素指的是例如能夠控制明亮度的一個單元。因此，作為一個例子，一個像素指的是一個色彩單元，並用該一個色彩單元來顯示明亮度。因此，在採用由R(紅色)、G(綠色)和B(藍色)這些色彩單元構成的彩色顯示裝置的情況下，像素的最小單位由R的像素、G的像素以及B的像素這三個像素構成。在此情況下，將RGB的每一個像素稱為子像素，將RGB的子像素總稱為像素。 In the present specification and the like, a pixel refers to, for example, one unit capable of controlling brightness. Thus, as an example, a pixel refers to a color unit and uses that one color unit to display brightness. Therefore, in the case of using a color display device composed of color units such as R (red), G (green), and B (blue), the minimum unit of the pixel is the pixel of R, the pixel of G, and the pixel of B. Pixel composition. In this case, each pixel of RGB is referred to as a sub-pixel, and sub-pixels of RGB are collectively referred to as a pixel.

源極驅動器IC31包括源極驅動器24、信號生成電路26、信號生成電路28、圖框記憶體30、圖框記憶體32、控制電路34以及介面36。 The source driver IC 31 includes a source driver 24, a signal generating circuit 26, a signal generating circuit 28, a frame memory 30, a frame memory 32, a control circuit 34, and an interface 36.

源極驅動器IC31從應用處理器99接收用來顯示影像的信號(影像資料)等。應用處理器99具有將影像資料轉換為規定形式的信號而輸出到介面36的功能。作為介面36，可以舉出轉換為適合於LVDS(Low voltage differential signaling：低壓差分信號)、MIPI(Mobile Industry Processor Interface：移動產業處理器介面)等的信號的電路。 The source driver IC 31 receives a signal (image material) or the like for displaying an image from the application processor 99. The application processor 99 has a function of converting image data into a predetermined format and outputting it to the interface 36. The interface 36 is a circuit that is converted into a signal suitable for LVDS (Low Voltage Differential Signaling), MIPI (Mobile Industry Processor Interface), or the like.

圖框記憶體30及圖框記憶體32是用來暫時儲存經過介面36從控 制電路34輸入的一個幀的影像資料的電路。圖1示出多個圖框記憶體，但是也可以為一個圖框記憶體。另外，也可以使用線記憶體。圖框記憶體的記憶單元可以使用SRAM(Static RAM：靜態隨機存取記憶體)或DRAM(Dynamic RAM：動態隨機存取記憶體)。藉由使用關態電流小的電晶體作為DRAM的電晶體，可以減少更新頻率，從而在實現低功耗化上是較佳的。 The frame memory 30 and the frame memory 32 are circuits for temporarily storing image data of one frame input from the control circuit 34 via the interface 36. Fig. 1 shows a plurality of frame memories, but may also be a frame memory. In addition, line memory can also be used. The memory unit of the frame memory can use SRAM (Static RAM: Static Random Access Memory) or DRAM (Dynamic RAM: Dynamic Random Access Memory). By using a transistor having a small off-state current as a transistor of a DRAM, the update frequency can be reduced, which is preferable in achieving low power consumption.

信號生成電路26是生成用來控制閘極驅動器20所輸出的掃描信號的信號的電路。信號生成電路28是生成用來控制閘極驅動器22所輸出的掃描信號的信號的電路。信號生成電路26及信號生成電路28對閘極驅動器20及閘極驅動器22輸出時脈信號CLK、脈衝寬度控制信號PWC、重設信號RES以及起動脈衝等信號，控制掃描信號的輸出。 The signal generating circuit 26 is a circuit that generates a signal for controlling a scan signal output from the gate driver 20. The signal generating circuit 28 is a circuit that generates a signal for controlling the scanning signal output from the gate driver 22. The signal generating circuit 26 and the signal generating circuit 28 output signals such as the clock signal CLK, the pulse width control signal PWC, the reset signal RES, and the start pulse to the gate driver 20 and the gate driver 22, and control the output of the scan signal.

例如，在信號生成電路26或信號生成電路28中，藉由將脈衝寬度控制信號PWC及時脈信號CLK固定為L位準，可以設置將從閘極驅動器20或閘極驅動器22輸出的掃描信號設定為L位準的期間，可以減少寫入到像素的影像資料的更新速率。另外，在閘極驅動器20或閘極驅動器22中，將作為掃描信號輸出的脈衝信號設定為L位準的信號也是指“停止掃描信號的輸出”。 For example, in the signal generating circuit 26 or the signal generating circuit 28, the scan signal output from the gate driver 20 or the gate driver 22 can be set by fixing the pulse width control signal PWC and the pulse signal CLK to the L level. The period of the L level can reduce the update rate of the image data written to the pixel. Further, in the gate driver 20 or the gate driver 22, the signal for setting the pulse signal output as the scan signal to the L level also means "stopping the output of the scan signal".

另外，在信號生成電路26或信號生成電路28中，藉由將對應於任意行的脈衝寬度控制信號PWC固定為L位準，可以設置將從閘極驅動器20或閘極驅動器22的任意行輸出的掃描信號設定為L位準的期間，可以將掃描信號輸出到一部分的行，並且將輸出到其他行的掃描信號設定為L位準的信號。另外，在閘極驅動器20或閘極驅動器22中，將作為掃描信號輸出到任意行的脈衝信號設定為L位準的信號也是指“停止輸出到任意行的像素的掃描信號的輸出”。 Further, in the signal generating circuit 26 or the signal generating circuit 28, by fixing the pulse width control signal PWC corresponding to an arbitrary line to the L level, it is possible to set an arbitrary line output from the gate driver 20 or the gate driver 22. While the scan signal is set to the L level, the scan signal can be output to a part of the line, and the scan signal output to the other line can be set to the L level signal. Further, in the gate driver 20 or the gate driver 22, a signal in which a pulse signal output as an arbitrary signal to a scanning signal is set to an L level is also referred to as "output of a scanning signal that stops outputting to a pixel of an arbitrary line".

源極驅動器24是用來對各列的源極線供應基於影像資料的電壓 (視頻電壓)的電路。閘極驅動器20是在選擇的行的像素中輸出掃描信號的電路，該掃描信號是對用來驅動液晶元件LC的像素電路寫入施加到源極線的視頻電壓的信號。閘極驅動器22是在選擇的行的像素中輸出掃描信號的電路，該掃描信號是對用來驅動發光元件EL的像素電路寫入施加到源極線的視頻電壓的信號。藉由對用來驅動液晶元件LC的像素電路寫入視頻電壓，顯示部13可以顯示影像。另外，藉由對用來驅動發光元件EL的像素電路寫入視頻電壓，顯示部13可以顯示影像。注意，像素電路是指在像素中藉由寫入視頻電壓來控制液晶元件或發光元件等顯示元件的灰階的電路。 The source driver 24 is a circuit for supplying a voltage (video voltage) based on image data to the source lines of the respective columns. The gate driver 20 is a circuit that outputs a scan signal in a pixel of a selected row, which is a signal for writing a video voltage applied to a source line to a pixel circuit for driving the liquid crystal element LC. The gate driver 22 is a circuit that outputs a scan signal in a pixel of a selected row, which is a signal for writing a video voltage applied to a source line to a pixel circuit for driving the light-emitting element EL. The display unit 13 can display an image by writing a video voltage to the pixel circuit for driving the liquid crystal element LC. Further, the display portion 13 can display an image by writing a video voltage to the pixel circuit for driving the light-emitting element EL. Note that the pixel circuit refers to a circuit that controls the gray scale of a display element such as a liquid crystal element or a light-emitting element by writing a video voltage in a pixel.

在圖1所示的顯示裝置10中，可以根據顯示部13的每個顯示部選擇性地切換向閘極線的掃描信號的輸出和停止，來顯示影像。例如，當顯示部13具有與m行(m為2以上的自然數)的閘極線連接的像素時，以對與第1行至第k行(k為小於m的自然數)的閘極線連接的顯示部(也稱為第一顯示部)中的像素輸出掃描信號，而對與第(k+1)行至第m行的閘極線連接的顯示部(也稱為第二顯示部)中的像素停止掃描信號的輸出的方式控制從信號生成電路26或信號生成電路28輸出的信號。如此，可以根據閘極驅動器20或閘極驅動器22的任意行的每個閘極線控制掃描信號的輸出或停止。就是說，可以根據控制顯示元件的灰階的每個像素電路控制掃描信號的輸出或停止，來進行顯示。 In the display device 10 shown in FIG. 1, an image can be displayed by selectively switching the output and stop of the scanning signal to the gate line in accordance with each display portion of the display unit 13. For example, when the display unit 13 has pixels connected to the gate lines of m rows (m is a natural number of 2 or more), the gates of the first row to the kth row (k is a natural number smaller than m) a pixel in the display portion (also referred to as a first display portion) connected to the line outputs a scan signal, and a display portion (also referred to as a second display) connected to the gate line of the (k+1)th to mthth rows The signal output from the signal generating circuit 26 or the signal generating circuit 28 is controlled in such a manner that the pixel in the portion) stops the output of the scanning signal. As such, the output or stop of the scan signal can be controlled according to each of the gate lines of the gate driver 20 or any of the gate drivers 22. That is, display can be performed by controlling the output or stop of the scan signal in accordance with each pixel circuit that controls the gray scale of the display element.

明確而言，可以在圖1所示的顯示裝置10的第一顯示部中，以使用發光元件EL及液晶元件LC的兩者進行顯示的方式從閘極驅動器20及閘極驅動器22的兩者輸出掃描信號，而在第二顯示部中，以只使用液晶元件LC進行顯示的方式從閘極驅動器20輸出掃描信號，並以不使用發光元件EL進行顯示的方式停止來自閘極驅動器22的掃描信號而進行顯示。就是說，藉由切換從信號生成電路26及信號生成電路28輸出的脈衝寬度控制信號PWC及時脈信號CLK等控制信號，來使閘極 驅動器20對所有行的閘極線輸出掃描信號，並使閘極驅動器22對第一顯示部的閘極線輸出掃描信號，並且對第二顯示部的閘極線停止掃描信號的供應。 Specifically, both of the gate driver 20 and the gate driver 22 can be displayed in the first display portion of the display device 10 shown in FIG. 1 by using both of the light-emitting element EL and the liquid crystal element LC for display. The scanning signal is output, and in the second display portion, the scanning signal is output from the gate driver 20 so as to be displayed using only the liquid crystal element LC, and the scanning from the gate driver 22 is stopped in such a manner that the display is not performed using the light-emitting element EL. The signal is displayed. That is, by switching the control signals such as the pulse width control signal PWC and the pulse signal CLK outputted from the signal generating circuit 26 and the signal generating circuit 28, the gate driver 20 outputs a scanning signal to the gate lines of all the rows, and The gate driver 22 outputs a scan signal to the gate line of the first display portion, and stops the supply of the scan signal to the gate line of the second display portion.

在上述使用反射型顯示元件的液晶元件LC進行顯示的第二顯示部中，較佳為進行更新資料的頻率低的顯示。當使用液晶元件LC進行顯示時，藉由利用IDS驅動可以間歇性地更新資料，因此可以減少資料的更新所需要的功耗。另外，反射型顯示元件的液晶元件LC可以在顯示影像時利用外光作為光源，因此不需要另外設置的光源，因此這是在進一步減少功耗時有效的。 In the second display unit that displays the liquid crystal element LC using the reflective display element described above, it is preferable to display the frequency at which the update data is low. When the display is performed using the liquid crystal element LC, the data can be intermittently updated by the IDS driving, so that the power consumption required for updating the data can be reduced. Further, since the liquid crystal element LC of the reflective display element can use external light as a light source when displaying an image, a separate light source is not required, which is effective in further reducing power consumption.

注意，上述資料是指在像素所具有的各顯示部上顯示的資料。就是說，相當於輸入到各顯示部的影像資料。另外，資料更新是指對像素所具有的各顯示部上顯示的資料進行更新。就是說，相當於輸入到各顯示部的影像資料的改寫(更新)頻率。 Note that the above information refers to data displayed on each display portion of the pixel. That is, it corresponds to the image data input to each display unit. Further, the data update means updating the data displayed on each display unit of the pixel. In other words, it corresponds to the rewriting (update) frequency of the video material input to each display unit.

另外，上述使用發光元件EL及/或液晶元件LC進行顯示的第一顯示部較佳為進行更新資料的頻率高的顯示。當使用發光元件EL及/或液晶元件LC進行顯示時，即使在外光的強度低或者昏暗的情況下，也可以切換為可見性高的顯示狀態更新資料，因此可以實現低功耗化及方便性優異的顯示裝置。 Further, it is preferable that the first display unit that performs display using the light-emitting element EL and/or the liquid crystal element LC has a high frequency of displaying the updated data. When the display is performed using the light-emitting element EL and/or the liquid crystal element LC, even when the intensity of the external light is low or dim, it is possible to switch to the display state update data with high visibility, thereby achieving low power consumption and convenience. Excellent display device.

〈顯示部的結構〉 <Structure of display unit>

圖2是說明顯示裝置10的顯示部13的結構的方塊圖。顯示部13包括多個像素19。像素19包括像素電路15及像素電路17。另外，圖2示出圖1所示的源極驅動器24、閘極驅動器20及閘極驅動器22。 FIG. 2 is a block diagram showing the configuration of the display unit 13 of the display device 10. The display section 13 includes a plurality of pixels 19. The pixel 19 includes a pixel circuit 15 and a pixel circuit 17. In addition, FIG. 2 shows the source driver 24, the gate driver 20, and the gate driver 22 shown in FIG. 1.

像素電路15是藉由被寫入視頻電壓控制液晶元件LC(未圖示)的灰階的電路。像素電路15包括電晶體及電容器。藉由源極線SL_LC被供 應寫入到像素電路15的視頻電壓。從閘極驅動器20藉由閘極線GL_LC被供應用來對像素電路15寫入視頻電壓的掃描信號。 The pixel circuit 15 is a circuit that controls the gray scale of the liquid crystal element LC (not shown) by being written into a video voltage. The pixel circuit 15 includes a transistor and a capacitor. The video voltage written to the pixel circuit 15 is supplied by the source line SL _LC . A scan signal for writing a video voltage to the pixel circuit 15 is supplied from the gate driver 20 via the gate line GL _LC .

像素電路17是藉由被寫入視頻電壓控制發光元件EL(未圖示)的灰階的電路。像素電路17包括電晶體及電容器。藉由源極線SL_EL被供應寫入到像素電路17的視頻電壓。從閘極驅動器22藉由閘極線GL_EL被供應用來對像素電路17寫入視頻電壓的掃描信號。 The pixel circuit 17 is a circuit that controls the gray scale of the light-emitting element EL (not shown) by being written into a video voltage. The pixel circuit 17 includes a transistor and a capacitor. The video voltage written to the pixel circuit 17 is supplied by the source line SL _EL . A scan signal for writing a video voltage to the pixel circuit 17 is supplied from the gate driver 22 via the gate line GL _EL .

另外，在圖式等中，作為源極線SL_EL、源極線SL_LC、閘極線GL_LC及閘極線GL_EL示出源極線SL_EL[1]、源極線SL_LC[1]、閘極線GL_LC[1]及閘極線GL_EL[1]，這些佈線表示第一行或第一列。另外，在以m行n列(m、n都是自然數)表示像素19時，顯示部13所包括的像素連接到源極線SL_EL[1]至[n]中的任一列、源極線SL_LC[1]至[n]中的任一列、閘極線GL_LC[1]至[m]中的任一行及閘極線GL_EL[1]至[m]中的任一行。 Further, in the drawing or the like, the source line SL _EL [1] and the source line SL _LC [1] are shown as the source line SL _EL , the source line SL _LC , the gate line GL _{LC ,} and the gate line GL _{EL .} ], the gate line GL _LC [1] and the gate line GL _EL [1], these wirings represent the first row or the first column. Further, when the pixel 19 is represented by m rows and n columns (m and n are natural numbers), the pixels included in the display portion 13 are connected to any one of the source lines SL _EL [1] to [n], the source. Any one of the lines SL _LC [1] to [n], any of the gate lines GL _LC [1] to [m], and any one of the gate lines GL _EL [1] to [m].

接著，說明像素19的電路。圖3A是像素19的電路圖的一個例子。像素19包括像素電路15、像素電路17、液晶元件LC及發光元件EL。 Next, the circuit of the pixel 19 will be described. FIG. 3A is an example of a circuit diagram of the pixel 19. The pixel 19 includes a pixel circuit 15, a pixel circuit 17, a liquid crystal element LC, and a light-emitting element EL.

在圖3A中，像素電路15包括電晶體M1及電容器Cs_LC。像素電路17包括電晶體M2、M3及電容器Cs_EL。如圖3A所示，像素19所包括的各元件連接到閘極線GL_LC[1]、閘極線GL_EL[1]、信號線SL_LC[1]、信號線SL_EC[1]、電容線L_CS、電流供應線L_ano以及共用電位線L_cas。 In FIG. 3A, the pixel circuit 15 includes a transistor M1 and a capacitor Cs _LC . The pixel circuit 17 includes transistors M2, M3 and a capacitor Cs _EL . As shown in FIG. 3A, the elements included in the pixel 19 are connected to the gate line GL _LC [1], the gate line GL _EL [1], the signal line SL _LC [1], the signal line SL _EC [1], and the capacitor. Line L _CS , current supply line L _{ano ,} and common potential line L _cas .

另外，電容器Cs_EL是為了將用來驅動發光元件EL的灰階電壓儲存在電晶體M3的閘極中而設置的。藉由採用該結構，可以更確實地保持用來驅動發光元件EL的灰階電壓。 Further, the capacitor Cs _EL is provided to store the gray scale voltage for driving the light emitting element EL in the gate of the transistor M3. By adopting this configuration, the gray scale voltage for driving the light emitting element EL can be more surely maintained.

另外，電晶體M3是具有背閘極的電晶體。藉由採用該結構，可以提高流過電晶體的電流量。另外，施加到背閘極的電壓也可以從其他 佈線供應。藉由採用該結構，可以控制電晶體的臨界電壓。 In addition, the transistor M3 is a transistor having a back gate. By adopting this structure, the amount of current flowing through the transistor can be increased. In addition, the voltage applied to the back gate can also be supplied from other wiring. By adopting this structure, the threshold voltage of the transistor can be controlled.

藉由控制電晶體M1的導通狀態，將用來驅動液晶元件LC的灰階電壓供應給電容器Cs_LC。藉由控制電晶體M2的導通狀態，將用來驅動發光元件EL的灰階電壓供應給電晶體M3的閘極。電晶體M3根據閘極電壓使電流流過電流供應線L_ano與共用電位線L_cas之間以驅動發光元件EL。 The gray scale voltage for driving the liquid crystal element LC is supplied to the capacitor Cs _LC by controlling the on state of the transistor M1. The gray scale voltage for driving the light emitting element EL is supplied to the gate of the transistor M3 by controlling the conduction state of the transistor M2. The transistor M3 causes a current to flow between the current supply line _Lan and the common potential line L _cas according to the gate voltage to drive the light-emitting element EL.

電晶體M1至M3可以使用n通道型電晶體。藉由改變各佈線的電壓的大小關係，也可以使用p通道型電晶體代替n通道型電晶體。電晶體M1至M3的半導體材料可以使用矽。作為矽，可以適當地選擇單晶矽、多晶矽、微晶矽或非晶矽等。 The transistors M1 to M3 can use an n-channel type transistor. Instead of the n-channel type transistor, a p-channel type transistor can also be used by changing the magnitude relationship of the voltages of the respective wirings. The semiconductor material of the transistors M1 to M3 may use germanium. As the ruthenium, a single crystal germanium, a polycrystalline germanium, a microcrystalline germanium or an amorphous germanium can be appropriately selected.

或者，電晶體M1至M3的半導體材料可以使用氧化物半導體。作為氧化物半導體，可以使用包含銦的氧化物半導體或包含銦、鎵以及鋅的氧化物半導體等。 Alternatively, an oxide semiconductor may be used as the semiconductor material of the transistors M1 to M3. As the oxide semiconductor, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used.

另外，像素19所具有的電晶體M1至M3可以使用底閘極型電晶體或頂閘極型電晶體等各種形態的電晶體來製造。 Further, the transistors M1 to M3 included in the pixel 19 can be fabricated using various types of transistors such as a bottom gate type transistor or a top gate type transistor.

另外，像素19所具有的電晶體M1至M3也可以為具有背閘極的電晶體。供應給背閘極的電壓也可以從與閘極線GL_LC[j]或閘極線GL_EL[j]不同的其他佈線供應。另外，也可以只有電晶體M3具有背閘極。藉由採用該結構，可以控制電晶體的臨界電壓或者提高流過電晶體的電流量。 In addition, the transistors M1 to M3 of the pixel 19 may also be a transistor having a back gate. The voltage supplied to the back gate can also be supplied from other wirings different from the gate line GL _LC [j] or the gate line GL _EL [j]. Alternatively, only the transistor M3 may have a back gate. By adopting this structure, it is possible to control the threshold voltage of the transistor or to increase the amount of current flowing through the transistor.

另外，在液晶元件LC中，可以利用IPS(In-Plane-Switching：平面內切換)模式、TN(Twisted Nematic：扭曲向列)模式、FFS(Fringe Field Switching：邊緣電場切換)模式、ASM(Axially Symmetric aligned Micro-cell：軸對稱排列微單元)模式、OCB(Optically Compensated Birefringence：光學補償彎曲)模式、FLC(Ferroelectric Liquid Crystal：鐵電性液晶)模式以及AFLC(Anti Ferroelectric Liquid Crystal：反鐵電性液晶)模式等。或者，可以利用垂直配向(VA)模式、ECB(Electrically Controlled Birefringence：電控雙折射)模式、賓主模式等。 Further, in the liquid crystal element LC, an IPS (In-Plane-Switching) mode, a TN (Twisted Nematic) mode, an FFS (Fringe Field Switching) mode, and ASM (Axially) can be used. Symmetric aligned Micro-cell: Axially Symmetrical Array (OCB) mode, OCB (Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, and AFLC (Anti Ferroelectric Liquid Crystal) LCD) mode, etc. Alternatively, a vertical alignment (VA) mode, an ECB (Electrically Controlled Birefringence) mode, an guest master mode, or the like can be utilized.

作為液晶元件所具有的液晶材料，例如，可以使用熱致液晶、低分子液晶、高分子液晶、高分子分散型液晶、鐵電液晶、反鐵電液晶等。或者，可以使用呈現膽固醇相、層列相、立方相、手性向列相、各向同性相等的液晶材料。或者，可以使用呈現藍相的液晶材料。 As the liquid crystal material of the liquid crystal element, for example, a thermotropic liquid crystal, a low molecular liquid crystal, a polymer liquid crystal, a polymer dispersed liquid crystal, a ferroelectric liquid crystal, an antiferroelectric liquid crystal, or the like can be used. Alternatively, a liquid crystal material exhibiting a cholesterol phase, a smectic phase, a cubic phase, a chiral nematic phase, and an isotropic phase may be used. Alternatively, a liquid crystal material exhibiting a blue phase can be used.

作為發光元件EL，可以使用有機電致發光元件、無機電致發光元件等EL元件或發光二極體等。 As the light-emitting element EL, an EL element such as an organic electroluminescence element or an inorganic electroluminescence element, a light-emitting diode, or the like can be used.

EL元件可以使用以發射白色光的方式層疊的疊層體。明確而言，可以使用層疊有使用包含發射藍色光的螢光材料的發光有機化合物的層及使用包含發射綠色光及紅色光的螢光材料以外的材料的層或使用包含發射黃色光的螢光材料以外的材料的層的疊層體。 The EL element can use a laminate in which white light is emitted to be laminated. Specifically, a layer laminated with a light-emitting organic compound containing a fluorescent material emitting blue light and a layer using a material other than a fluorescent material emitting green light and red light or a fluorescent light containing yellow-emitting light may be used. A laminate of layers of material other than the material.

接著，說明像素19的層結構的示意圖。在圖3B所示的像素19中，示出像素電路15、像素電路17、液晶元件LC及發光元件EL的配置。圖3B所示的液晶元件LC具有開口21。該開口21表示設置於反射電極中的開口。圖3B所示的發光元件EL與液晶元件LC所具有的開口21重疊地設置。圖3B所示的像素電路15及像素電路17設置於設置有液晶元件LC的層與設置有發光元件EL的層之間。另外，圖3B所示的像素電路15及像素電路17也可以設置在不同的層中。 Next, a schematic diagram of the layer structure of the pixel 19 will be described. In the pixel 19 shown in FIG. 3B, the arrangement of the pixel circuit 15, the pixel circuit 17, the liquid crystal element LC, and the light-emitting element EL is shown. The liquid crystal element LC shown in FIG. 3B has an opening 21. This opening 21 represents an opening provided in the reflective electrode. The light-emitting element EL shown in FIG. 3B is provided to overlap the opening 21 of the liquid crystal element LC. The pixel circuit 15 and the pixel circuit 17 shown in FIG. 3B are disposed between a layer in which the liquid crystal element LC is provided and a layer in which the light emitting element EL is provided. In addition, the pixel circuit 15 and the pixel circuit 17 shown in FIG. 3B may be disposed in different layers.

藉由採用圖3B所示的結構，可以控制由液晶元件LC的反射光12 的強度以及經過開口21的發光元件EL所發射的光16的強度來控制像素19的灰階。另外，發射反射光12的方向及發射發光元件EL所發射的光16的方向成為顯示裝置10的顯示面。另外，為了射出發光元件EL所發射的光16，開口21形成在液晶元件LC的反射電極中，該開口21採用射出光16的結構即可，其形狀不侷限於開口而也可以具有形成在反射電極中的槽口或狹縫狀的形狀。 By employing the structure shown in FIG. 3B, the gray scale of the pixel 19 can be controlled by controlling the intensity of the reflected light 12 of the liquid crystal element LC and the intensity of the light 16 emitted by the light emitting element EL of the opening 21. Further, the direction in which the reflected light 12 is emitted and the direction in which the light 16 emitted from the light-emitting element EL is emitted become the display surface of the display device 10. Further, in order to emit the light 16 emitted from the light-emitting element EL, the opening 21 is formed in the reflective electrode of the liquid crystal element LC, and the opening 21 may have a structure in which the light 16 is emitted, and the shape thereof is not limited to the opening but may also be formed in the reflection. A notch or slit-like shape in the electrode.

在圖3B所示的結構中，可以將用來驅動像素的電路諸如像素電路15及像素電路17等配置於液晶元件LC所包括的反射電極下。由此，可以抑制由於用來驅動發光元件EL的像素電路17的增加所導致的開口率的降低。 In the configuration shown in FIG. 3B, a circuit for driving a pixel such as the pixel circuit 15 and the pixel circuit 17 can be disposed under the reflective electrode included in the liquid crystal element LC. Thereby, it is possible to suppress a decrease in the aperture ratio due to an increase in the pixel circuit 17 for driving the light emitting element EL.

另外，圖3B所示的結構包括能夠按像素19控制液晶元件LC的像素電路15及能夠按像素19控制發光元件EL的像素電路17。就是說，可以按像素19分別控制液晶元件LC及發光元件EL的灰階顯示。在上述結構中，與使多個像素的全部都發射光的背光源的控制不同，可以以像素的最小單位控制對應於顯示的影像的發光元件EL的發光，因此可以抑制剩餘的發光。由此，包括圖3B所示的像素的顯示裝置可以實現低功耗化。 Further, the structure shown in FIG. 3B includes a pixel circuit 15 capable of controlling the liquid crystal element LC by the pixel 19 and a pixel circuit 17 capable of controlling the light-emitting element EL by the pixel 19. That is, the gray scale display of the liquid crystal element LC and the light emitting element EL can be controlled by the pixels 19, respectively. In the above configuration, unlike the control of the backlight that causes all of the plurality of pixels to emit light, the light emission of the light-emitting element EL corresponding to the displayed image can be controlled in the minimum unit of the pixel, so that the remaining light emission can be suppressed. Thereby, the display device including the pixel shown in FIG. 3B can achieve low power consumption.

另外，像素電路15及像素電路17都包括用來控制灰階顯示的電晶體。作為該電晶體，較佳為採用在通道形成區域中具有金屬氧化物的電晶體。金屬氧化物被用作氧化物半導體，在通道形成區域中具有該氧化物半導體的OS電晶體的關態電流極小。由此，當使用顯示裝置顯示靜態影像時，可以在像素電路中長時間保持對應於視頻電壓的電荷。藉由採用在像素電路中長時間保持對應於視頻電壓的電荷的結構，可以減少像素的改寫頻率(更新速率)(例如，圖框頻率為30Hz以下)，因此可以實現低功耗化。 In addition, the pixel circuit 15 and the pixel circuit 17 each include a transistor for controlling gray scale display. As the transistor, a transistor having a metal oxide in a channel formation region is preferably used. A metal oxide is used as an oxide semiconductor, and an off-state current of an OS transistor having the oxide semiconductor in a channel formation region is extremely small. Thereby, when a still image is displayed using the display device, the electric charge corresponding to the video voltage can be held for a long time in the pixel circuit. By adopting a configuration in which the charge corresponding to the video voltage is held for a long time in the pixel circuit, the rewriting frequency (update rate) of the pixel can be reduced (for example, the frame frequency is 30 Hz or less), so that power consumption can be reduced.

〈顯示裝置的工作例子〉 <Working example of display device>

接著，關於圖1所示的顯示裝置的工作，舉出具備該顯示裝置的電子裝置進行說明。圖4A及圖4B示出具備圖1所示的顯示裝置的電子裝置40。圖4A及圖4B所示的電子裝置如圖4A所示的蛤殼式設計(clamshell)筆記型電腦那樣具有可以使顯示部折疊(foldable)的結構。 Next, an operation of the display device shown in FIG. 1 will be described with reference to an electronic device including the display device. 4A and 4B show an electronic device 40 including the display device shown in Fig. 1. The electronic device shown in FIGS. 4A and 4B has a structure in which the display portion can be folded as in the clamshell notebook computer shown in FIG. 4A.

另外，在圖4A所示的折疊狀態下，彎折部的曲率半徑不是0(R=0)，較佳為以折疊狀態下的彎折部具有平緩的曲面的方式將曲率半徑設定較佳為5mm以上且30mm以下。藉由採用該結構，可以抑制由顯示裝置的彎折所導致的破壞。另外，較佳為具有防止鎖定功能，以可以抑制由外力所導致的彎折部的想不到的變形。 In addition, in the folded state shown in FIG. 4A, the radius of curvature of the bent portion is not 0 (R = 0), and it is preferable to set the radius of curvature in a manner that the bent portion in the folded state has a gentle curved surface. 5 mm or more and 30 mm or less. By adopting this configuration, it is possible to suppress the damage caused by the bending of the display device. Further, it is preferable to have a function of preventing the locking so as to suppress an unexpected deformation of the bent portion caused by the external force.

圖4B所示的電子裝置40在外殼內具備圖1的顯示裝置10，可以看到顯示部。另外，在圖5B中，將顯示部分為顯示部13A、顯示部13B以及顯示部13C。在圖5B中，將電子裝置40的外殼分為外殼42A、外殼42B以及外殼42C。作為其它結構，在電子裝置40中示出光感測器44。 The electronic device 40 shown in FIG. 4B is provided with the display device 10 of FIG. 1 in the casing, and the display portion can be seen. In addition, in FIG. 5B, the display part is the display part 13A, the display part 13B, and the display part 13C. In FIG. 5B, the outer casing of the electronic device 40 is divided into a casing 42A, a casing 42B, and a casing 42C. As another structure, the photo sensor 44 is shown in the electronic device 40.

外殼42A與外殼42C藉由外殼42B連接。在组合外殼42A至42C時的長軸方向上的兩邊上配置有圖1的閘極驅動器20、22。外殼42B被用作電子裝置40中的鉸鏈，可以具有藉由重疊顯示部13A和顯示部13C可折疊的結構。由此，可以實現攜帶時可移動性好且使用時利用大顯示部而可見性優異的電子裝置。 The outer casing 42A and the outer casing 42C are connected by a casing 42B. The gate drivers 20, 22 of Fig. 1 are disposed on both sides in the long axis direction when the outer casings 42A to 42C are combined. The outer casing 42B is used as a hinge in the electronic device 40, and may have a structure foldable by overlapping the display portion 13A and the display portion 13C. Thereby, it is possible to realize an electronic device which is excellent in portability during carrying and which is excellent in visibility by using a large display portion at the time of use.

被用作鉸鏈的外殼42B較佳為具有在打開外殼42A及外殼42C時防止上述外殼42A與外殼42C之間的角度比規定的角度大的鎖定機構。例如，發揮鎖定功能(不能進一步打開外殼)的角度較佳為90度以上且小於180度，可以典型地是90度、120度、135度或150度等。由 此，可以提高方便性、安全性以及可靠性。另外，對外殼42A至42C的結構實例將後面進行說明。 The outer casing 42B used as a hinge preferably has a locking mechanism that prevents the angle between the outer casing 42A and the outer casing 42C from being larger than a predetermined angle when the outer casing 42A and the outer casing 42C are opened. For example, the angle at which the locking function (which cannot further open the outer casing) is exerted is preferably 90 degrees or more and less than 180 degrees, and may be typically 90 degrees, 120 degrees, 135 degrees, or 150 degrees. This improves convenience, safety, and reliability. In addition, a structural example of the outer casings 42A to 42C will be described later.

被用作顯示部的顯示部13A、顯示部13B及顯示部13C具有觸控面板的功能，可以利用手指或觸控筆等進行操作。 The display unit 13A, the display unit 13B, and the display unit 13C, which are used as the display unit, have a function as a touch panel, and can be operated by a finger or a stylus pen.

作為一個撓性顯示器，組裝有被用作顯示部的顯示部13A、顯示部13B及顯示部13C。由此，可以在顯示部13A、顯示部13B及顯示部13C中進行流暢的連續顯示。另外，在顯示部13B中，可以使其至少一部分彎曲而具有曲面。 As one flexible display, a display portion 13A serving as a display portion, a display portion 13B, and a display portion 13C are assembled. Thereby, smooth continuous display can be performed on the display unit 13A, the display unit 13B, and the display unit 13C. Further, in the display portion 13B, at least a part thereof may be curved to have a curved surface.

具有曲面的顯示部13B以沒有間隙的方式設置於具有平面的顯示部13A與顯示部13C之間。藉由採用該結構，可以顯示更立體的顯示影像。 The display portion 13B having a curved surface is provided between the display portion 13A having the flat surface and the display portion 13C without a gap. By adopting this configuration, a more stereoscopic display image can be displayed.

圖5A是用來說明圖4A和圖4B所示的電子裝置40的使用例子的圖。在圖5A中，示出分別使顯示部13A、顯示部13B及顯示部13C顯示不同的影像的例子。在具有平面的顯示部13A上顯示文字43A。在具有曲面的顯示部13B上顯示圖示43B等。在具有平面的顯示部13C上顯示輸入鍵43C。 FIG. 5A is a view for explaining an example of use of the electronic device 40 illustrated in FIGS. 4A and 4B. FIG. 5A shows an example in which the display unit 13A, the display unit 13B, and the display unit 13C display different images. The character 43A is displayed on the display unit 13A having a flat surface. The illustration 43B or the like is displayed on the display portion 13B having a curved surface. The input key 43C is displayed on the display unit 13C having a flat surface.

在圖5A中例示出在顯示部13A上顯示文字43A的情況，但是較佳為進行動態影像等需要資料的更新的顯示的區域。另外，在圖5A中例示出在顯示部13B上顯示圖示43B的情況，但是與顯示部13A同樣，也可以為進行動態影像等需要資料的更新的顯示的區域。另外，圖5A例示出在顯示部13C上顯示輸入鍵43C的情況，但是較佳為進行更新速率低的靜態影像等的顯示的區域。另外，可以將顯示部13C成為進行動態影像等需要資料的更新的顯示的區域。根據顯示的影像及周圍環境下的外光的有無，在顯示部13A、顯示部13B及顯示部13C中進行 更新速率及顯示模式的切換，這在方便性及低功耗上是較佳的。 Although the case where the character 43A is displayed on the display unit 13A is exemplified in FIG. 5A, it is preferable to perform an area for displaying a display requiring updating of a moving image or the like. In addition, the case where the illustration 43B is displayed on the display unit 13B is exemplified in FIG. 5A. However, similarly to the display unit 13A, an area for displaying an update of the required information such as a moving image may be used. In addition, FIG. 5A illustrates a case where the input key 43C is displayed on the display unit 13C, but it is preferable to display an area of a still image or the like having a low update rate. In addition, the display unit 13C can be an area for displaying a display requiring updating of a moving image or the like. It is preferable to switch the update rate and the display mode on the display unit 13A, the display unit 13B, and the display unit 13C based on the displayed image and the presence or absence of external light in the surrounding environment, which is preferable in terms of convenience and low power consumption.

圖5B示出圖5A所示的電子裝置40。可以將圖5A所示的電子裝置40中的顯示部13A、顯示部13B以及顯示部13C分為需要資料的更新的區域及需要繼續的資料的更新的區域。例如，在圖5A所示的分別顯示文字43A及圖示43B的顯示部13A及顯示部13B中，如圖5B所示，採用利用液晶元件LC的反射光12及發光元件EL的光16進行顯示的結構。另外，如圖5B所示，將圖5A所示的顯示輸入鍵43C的顯示部13C成為不需要繼續的資料的更新的區域，間歇性地進行利用液晶元件LC的顯示的更新，亦即，在更新速率低的情況下進行顯示。就是說，如圖5B所示，採用進行利用由液晶元件LC的反射光12的顯示的結構。 FIG. 5B shows the electronic device 40 shown in FIG. 5A. The display unit 13A, the display unit 13B, and the display unit 13C in the electronic device 40 shown in FIG. 5A can be divided into an area in which an update of the material is required and an area in which the material to be continued is updated. For example, as shown in FIG. 5B, the display unit 13A and the display unit 13B which respectively display the characters 43A and 43B shown in FIG. 5A are displayed by using the reflected light 12 of the liquid crystal element LC and the light 16 of the light-emitting element EL. Structure. In addition, as shown in FIG. 5B, the display unit 13C of the display input key 43C shown in FIG. 5A is an area in which updating of the material that does not need to be continued, and the display of the liquid crystal element LC is intermittently updated, that is, Displayed when the update rate is low. That is, as shown in FIG. 5B, a configuration for performing display using the reflected light 12 by the liquid crystal element LC is employed.

圖6A所示的電子裝置40是以具有顯示部13A、顯示部13B以及顯示部13C的顯示部成為平面的方式變形的電子裝置。另外，在圖6A所示的電子裝置40中，顯示裝置10所包括的閘極驅動器20及22配置在平行於箭頭X的方向上的顯示部的兩個邊，依次向顯示部13A中的像素、顯示部13B中的像素及顯示部13C中的像素輸出掃描信號。如圖6A所示那樣，可以將圖4A、圖4B以及圖5A、圖5B所示的電子裝置40變形為平板型電子裝置的形狀。 The electronic device 40 shown in FIG. 6A is an electronic device that is deformed such that the display portion of the display portion 13A, the display portion 13B, and the display portion 13C is flat. Further, in the electronic device 40 shown in FIG. 6A, the gate drivers 20 and 22 included in the display device 10 are disposed on both sides of the display portion in the direction parallel to the arrow X, sequentially to the pixels in the display portion 13A. The pixels in the display unit 13B and the pixels in the display unit 13C output scan signals. As shown in FIG. 6A, the electronic device 40 shown in FIGS. 4A, 4B, and 5A and 5B can be deformed into the shape of a flat-panel electronic device.

圖6B示出顯示部13及周邊的驅動電路的方塊圖。圖6B所示的顯示部13包括多個像素19。像素19包括像素電路15及像素電路17。另外，圖6B示出源極驅動器24、閘極驅動器20及閘極驅動器22。 FIG. 6B is a block diagram showing the display unit 13 and the drive circuit in the periphery. The display portion 13 shown in FIG. 6B includes a plurality of pixels 19. The pixel 19 includes a pixel circuit 15 and a pixel circuit 17. In addition, FIG. 6B shows the source driver 24, the gate driver 20, and the gate driver 22.

在圖6B中，與圖2同樣，示出第一列的源極線SL_EL[1]及源極線SL_LC[1]以及第一行的閘極線GL_LC[1]及閘極線GL_EL[1]。另外，在圖6B中示出第二行的閘極線GL_LC[2]及閘極線GL_EL[2]、第j行(j為3以上且(m-1)以下(m為5以上的自然數)的自然數)的閘極線GL_LC[j]及閘極線GL_EL[j]、第j+1行的閘極線GL_LC[j+1]以及閘極線GL_EL[j+1]、第 m-1行的閘極線GL_LC[m-1]以及閘極線GL_EL[m-1]、第m行的閘極線GL_LC[m]及閘極線GL_EL[m]。 In FIG. 6B, as in FIG. 2, the source line SL _EL [1] and the source line SL _LC [1] of the first column and the gate line GL _LC [1] of the first row and the gate line are shown. GL _EL [1]. In addition, FIG. 6B shows the gate line GL _LC [2] and the gate line GL _EL [2] and the jth row of the second row (j is 3 or more and (m-1) or less (m is 5 or more). The gate number GL _LC [j] of the natural number) and the gate line GL _EL [j], the gate line GL _LC [j+1] of the j+1th row, and the gate line GL _EL [ j+1], the gate line GL _LC [m-1] of the m-1th row, and the gate line GL _EL [m-1], the gate line GL _LC [m] of the mth row, and the gate line GL _EL [m].

另外，在下面說明中，圖6B所示的第一行的閘極線GL_LC[1]及閘極線GL_EL[1]以及第二行的閘極線GL_LC[2]及閘極線GL_EL[2]為對圖6A的顯示部13A的像素供應掃描信號的閘極線。另外，圖6B所示的第j行的閘極線GL_LC[j]及閘極線GL_EL[j]以及第j+1行的閘極線GL_LC[j+1]及閘極線GL_EL[j+1]為對圖6A的顯示部13B的像素供應掃描信號的閘極線。另外，圖6B所示的第m-1行的閘極線GL_LC[m-1]及閘極線GL_EL[m-1]以及第m行的閘極線GL_LC[m]及閘極線GL_EL[m]為對圖6A的顯示部13C的像素供應掃描信號的閘極線。 In addition, in the following description, the gate line GL _LC [1] and the gate line GL _EL [1] of the first row and the gate line GL _LC [2] of the second row and the gate line of the second row shown in FIG. 6B are shown. GL _EL [2] is a gate line that supplies a scan signal to the pixels of the display portion 13A of FIG. 6A. Further, the gate line of the j-th row in FIG illustrated 6B GL _LC [j] and _{the EL} gate line GL [j] and the second gate line j + 1 _{the LC} line GL [j + 1] and the gate line GL _EL [j+1] is a gate line that supplies a scan signal to the pixels of the display portion 13B of FIG. 6A. In addition, the gate line GL _LC [m-1] and the gate line GL _EL [m-1] of the m-1th row and the gate line GL _LC [m] of the mth row and the gate of the mth row shown in FIG. 6B The line GL _EL [m] is a gate line that supplies a scan signal to the pixels of the display portion 13C of FIG. 6A.

在圖7A和圖7B中，使用圖6B所示的方塊圖說明進行圖6A和圖6B所示的工作時的圖1的顯示裝置的工作。 In Figs. 7A and 7B, the operation of the display device of Fig. 1 when the operations shown in Figs. 6A and 6B are performed will be described using the block diagram shown in Fig. 6B.

在圖7A中，虛線箭頭23是使閘極驅動器20依次輸出掃描信號的掃描方向視覺化的箭頭。另外，在圖7A中，虛線箭頭25是使閘極驅動器22依次輸出掃描信號的掃描方向視覺化的箭頭。 In FIG. 7A, the dotted arrow 23 is an arrow that visualizes the scanning direction in which the gate driver 20 sequentially outputs the scanning signal. In addition, in FIG. 7A, the dotted arrow 25 is an arrow which visualizes the scanning direction which the gate driver 22 sequentially outputs a scanning signal.

本發明的一個實施方式的顯示裝置的工作為如下工作：如圖7A所示那樣，在進行圖6A和圖6B所示的工作時，在需要更新資料的區域中，以進行寫入到發光元件EL的視頻電壓的更新的方式輸出掃描信號。就是說，在閘極驅動器20如虛線箭頭23所示那樣對所有行輸出掃描信號時，在閘極驅動器22中從第一行的閘極線GL_EL[1]、第二行的閘極線GL_EL[2]輸出掃描信號，第j行的閘極線GL_EL[j]、第j+1行的閘極線GL_EL[j+1]輸出掃描信號，不從第m-1行的閘極線GL_EL[m-1]、第m行的閘極線GL_EL[m]輸出掃描信號的方式進行工作。以從閘極驅動器22選擇性地輸出掃描信號的方式切換由圖1所示的信號生成電路26生成的各控制信號，而實現該掃描信號的輸出及停止的切換。 The operation of the display device of one embodiment of the present invention works as follows: as shown in FIG. 7A, in the operation of the operations shown in FIGS. 6A and 6B, in the area where the material needs to be updated, writing to the light-emitting element is performed. The scanning signal is output in such a manner that the EL video voltage is updated. That is, when the gate driver 20 outputs a scan signal to all the rows as indicated by the dotted arrow 23, the gate line GL _EL [1] of the first row and the gate line of the second row are in the gate driver 22. GL _EL [2] outputs the scan signal, the gate line GL _EL [j] of the jth line, the gate line GL _EL [j+1] of the j+1th line outputs the scan signal, not from the m-1th line The gate line GL _EL [m-1] and the gate line GL _EL [m] of the mth row operate in such a manner as to output a scan signal. The control signals generated by the signal generating circuit 26 shown in FIG. 1 are switched so that the scanning signals are selectively outputted from the gate driver 22, thereby switching between the output and the stop of the scanning signals.

另外，在圖7B中說明與圖7A不同的本發明的一個實施方式的顯示裝置的工作。在圖7B中的工作中，與閘極驅動器22同樣，藉由由閘極驅動器20選擇性地進行掃描信號的輸出，在規定的期間停止對顯示部13C中的像素的掃描信號的供應，間歇性地進行顯示部13C的顯示的更新。在圖7B中，藉由未圖示圖7A所示的虛線箭頭23的一部分(虛線箭頭23A)，表示週期性地停止對顯示部13C中的像素的掃描信號的輸出。就是說，在閘極驅動器20中以從第一行的閘極線GL_LC[1]、第二行的閘極線GL_LC[2]、第j行的閘極線GL_LC[j]、第j+1行的閘極線GL_LC[j+1]輸出掃描信號而不從第m-1行的閘極線GL_LC[m-1]及第m行的閘極線GL_LC[m]輸出掃描信號的方式進行工作，同時在閘極驅動器22中以從第一行的閘極線GL_EL[1]、第二行的閘極線GL_EL[2]、第j行的閘極線GL_EL[j]、第j+1行的閘極線GL_EL[j+1]輸出掃描信號而不從第m-1行的閘極線GL_EL[m-1]、第m行的閘極線GL_EL[m]輸出掃描信號的方式進行工作。 In addition, the operation of the display device of one embodiment of the present invention which is different from that of FIG. 7A will be described with reference to FIG. 7B. In the operation of FIG. 7B, similarly to the gate driver 22, by selectively outputting the scan signal by the gate driver 20, the supply of the scan signal to the pixels in the display portion 13C is stopped for a predetermined period of time, intermittently. The display of the display unit 13C is updated. In FIG. 7B, the output of the scanning signal to the pixels in the display portion 13C is periodically stopped by a portion (dashed arrow 23A) of the broken line arrow 23 shown in FIG. 7A. That is, the gate driver 20 to the first row from the gate line GL _LC [1], the second row gate line GL _LC [2], the j-th gate line line GL _LC [j], The gate line GL _LC [j+1] of the j+1th row outputs the scan signal without the gate line GL _LC [m-1] of the m-1th row and the gate line GL _{LC of the} mth row [m way] work output scanning signals, while gate 22 to the gate line from the first line GL _EL [1], the second row gate line GL _EL gate drive [2], j-th row electrode The gate line GL _EL [j], the gate line GL _EL [j+1] of the j+1th line outputs a scan signal without the gate line GL _EL [m-1] of the m-1th row, the mth row The gate line GL _EL [m] outputs a scanning signal to operate.

藉由切換由圖1的信號生成電路26的各控制信號，實現控制上述來自閘極驅動器20的掃描信號的輸出或停止。與此同樣，藉由切換由圖1的信號生成電路28的各控制信號，實現控制上述來自閘極驅動器22的掃描信號的輸出及停止。 The output or the stop of the scanning signal from the gate driver 20 is controlled by switching the respective control signals of the signal generating circuit 26 of FIG. Similarly, by switching the respective control signals of the signal generating circuit 28 of Fig. 1, the output and the stop of the scanning signal from the gate driver 22 are controlled.

在根據本發明的一個實施方式的顯示裝置10中，在需要資料的更新的顯示部中，即使在外光的強度低或者昏暗的環境下，可以切換為可見性高的顯示狀態而進行顯示，由此，可以實現功耗低且方便性優異的顯示裝置。並且，在不需要資料的更新的顯示部中，在抑制發光元件EL的發光的同時減少視頻電壓的改寫頻率。由此，可以實現功耗低且方便性優異的顯示裝置。 In the display device 10 according to an embodiment of the present invention, in a display portion requiring updating of data, even in an environment where the intensity of external light is low or dim, it is possible to switch to a display state with high visibility for display. Thus, a display device with low power consumption and excellent convenience can be realized. Further, in the display portion that does not require updating of the material, the rewriting frequency of the video voltage is reduced while suppressing the light emission of the light-emitting element EL. Thereby, it is possible to realize a display device which is low in power consumption and excellent in convenience.

〈外殼的結構實例〉 <Example of the structure of the outer casing>

圖8A至圖8F示出外殼42A至42C的連接部的側面圖，並對圖4B等所示的被用作鉸鏈的外殼42B的結構進行說明。 8A to 8F are side views showing the connection portions of the outer casings 42A to 42C, and the structure of the outer casing 42B used as the hinge shown in Fig. 4B and the like will be described.

作為外殼42B，例如可以單體使用彈簧或橡膠等彈性體或者組合上述彈性體。將如圖4B或圖8A所示那樣將電子裝置40折疊時的外殼42B的尺寸設定為自然長度，而在如圖4A或圖8B所示那樣將電子裝置40折疊時，外殼42B自身延伸而能夠維持其他部分的形狀。另外，將如圖4B或圖8A所示那樣將電子裝置40折疊時的外殼42B的尺寸設定為自然長度，而在如圖6A或圖8C所示那樣使顯示部成為平坦時，外殼42B自身收縮而能夠維持其他部分的形狀。 As the outer casing 42B, for example, an elastic body such as a spring or a rubber or a combination of the above elastic bodies may be used alone. The size of the outer casing 42B when the electronic device 40 is folded as shown in FIG. 4B or FIG. 8A is set to a natural length, and when the electronic device 40 is folded as shown in FIG. 4A or FIG. 8B, the outer casing 42B itself is extended to enable Maintain the shape of the other parts. Further, the size of the outer casing 42B when the electronic device 40 is folded as shown in FIG. 4B or FIG. 8A is set to a natural length, and when the display portion is flat as shown in FIG. 6A or FIG. 8C, the outer casing 42B is contracted by itself. It is able to maintain the shape of other parts.

或者，作為外殼42B，例如可以使用使多個間隔物連接的結構體。另外，使多個間隔物連接的結構體也可以與上述彈性體組合而使用。將如圖4B或圖8D所示那樣使電子裝置40的顯示部的一部分彎曲時的外殼42B所具有的間隔物43的間隔設定為規定的間隔，而在如圖4A或圖8E所示那樣將電子裝置40折疊時，具有以比上述間隔寬的間隔配置間隔物43的形狀。另外，將如圖4B或圖8D所示那樣使電子裝置40的顯示部的一部分彎曲時的外殼42B所具有的間隔物43的間隔設定為規定的間隔，而在如圖6A或圖8F所示那樣成為平坦時，具有以比上述間隔窄的間隔配置間隔物43的形狀。 Alternatively, as the outer casing 42B, for example, a structure in which a plurality of spacers are connected may be used. Further, a structure in which a plurality of spacers are connected may be used in combination with the above-described elastomer. As shown in FIG. 4B or FIG. 8D, the interval of the spacers 43 provided in the outer casing 42B when a part of the display portion of the electronic device 40 is bent is set to a predetermined interval, as shown in FIG. 4A or FIG. 8E. When the electronic device 40 is folded, it has a shape in which the spacers 43 are arranged at a wider interval than the above-described interval. Further, as shown in FIG. 4B or FIG. 8D, the interval of the spacers 43 provided in the outer casing 42B when a part of the display portion of the electronic device 40 is bent is set to a predetermined interval, as shown in FIG. 6A or FIG. 8F. When it is flat as such, it has a shape in which the spacers 43 are arranged at a narrower interval than the above-described interval.

另外，外殼42B較佳為具有比其他地方，例如外殼42A及42C薄的結構。藉由採用該結構，可以在使用時容易使顯示部13B彎曲的同時，提高顯示部13A及13C的表面的平坦性及耐衝擊性。外殼42A及42C較佳為具有施加人力等外力時也不變形的程度的強度。藉由採用該結構，可以實現充分確保顯示部13A及13C的平坦性的電子裝置。 Further, the outer casing 42B preferably has a structure thinner than other places such as the outer casings 42A and 42C. According to this configuration, the display portion 13B can be easily bent during use, and the flatness and impact resistance of the surfaces of the display portions 13A and 13C can be improved. The outer casings 42A and 42C preferably have a strength that does not deform when an external force such as a human force is applied. By adopting this configuration, an electronic device that sufficiently ensures the flatness of the display portions 13A and 13C can be realized.

〈顯示裝置的顯示模式〉 <Display mode of display device>

使用圖9A至圖9D說明上述顯示裝置的工作例子所說明的降低更 新速率的顯示模式。另外，使用圖10A至圖10E說明利用圖4B所說明的光感測器44的顯示模式的切換。 The display mode for lowering the update rate explained in the operation example of the above display device will be described with reference to Figs. 9A to 9D. In addition, switching of the display mode of the photo sensor 44 explained using FIG. 4B will be described using FIGS. 10A to 10E.

下面，將上述顯示裝置的工作例子所說明的降低更新速率的顯示模式稱為空轉停止(IDS)驅動模式，而進行說明。另外，作為顯示裝置10可能會進行的顯示模式，舉出以通常的圖框頻率進行工作的通常驅動模式(Normal mode)及空轉停止(IDS)驅動模式進行說明。 Hereinafter, the display mode in which the update rate is reduced as described in the operation example of the display device will be referred to as an idle stop (IDS) drive mode. Further, as a display mode that the display device 10 may perform, a normal drive mode (Normal mode) and an idle stop (IDS) drive mode that operate at a normal frame frequency will be described.

另外，IDS驅動是指在執行影像資料的寫入處理之後停止影像資料的改寫的驅動方法。藉由延長從影像資料的寫入起下一次的影像資料的寫入為止的間隔時間，可以減少該間隔時間中的影像資料的寫入所需要的功耗。 Further, the IDS drive is a drive method for stopping the rewriting of the image data after the execution of the writing process of the image data. By extending the interval from the writing of the image data to the next writing of the image data, the power consumption required for writing the image data during the interval can be reduced.

在圖9A至圖9D中舉出一個例子說明上述通常驅動模式及IDS驅動。另外，在圖9A至圖9D中說明對液晶元件LC及像素電路15適用通常驅動模式及IDS驅動的情況，但是也可以對發光元件EL及像素電路17適用通常驅動模式及IDS驅動。 An example of the above-described normal drive mode and IDS drive will be described with reference to an example in FIGS. 9A to 9D. 9A to 9D, the case where the normal driving mode and the IDS driving are applied to the liquid crystal element LC and the pixel circuit 15 is described. However, the normal driving mode and the IDS driving may be applied to the light emitting element EL and the pixel circuit 17.

圖9A示出由液晶元件LC及像素電路15構成的像素的電路圖。圖9A示出連接於源極線SL及閘極線GL的電晶體M1、電容器Cs_LC及液晶元件LC。源極線SL及閘極線GL相當於圖3A和圖3B等所示的源極線SL_LC及閘極線GL_LC。 FIG. 9A shows a circuit diagram of a pixel composed of the liquid crystal element LC and the pixel circuit 15. FIG. 9A shows a transistor M1, a capacitor Cs _LC, and a liquid crystal element LC connected to the source line SL and the gate line GL. The source line SL and the gate line GL correspond to the source line SL _LC and the gate line GL _LC shown in FIGS. 3A and 3B.

圖9B是示出分別對通常驅動模式下的源極線SL及閘極線GL供應的信號的波形的時序圖。在通常驅動模式下以通常的圖框頻率(例如60Hz)工作。一個圖框期間以期間T₁至T₃表示，在各圖框期間中進行對閘極線供應掃描信號並且將源極線的視頻電壓D₁寫入到像素中的工作。該工作在期間T₁至T₃中寫入相同的視頻電壓D₁時或寫入不同的視頻電壓時都一樣。 FIG. 9B is a timing chart showing waveforms of signals supplied to the source line SL and the gate line GL in the normal driving mode, respectively. It operates at the normal frame frequency (for example, 60 Hz) in the normal drive mode. During one frame period T ₁ to T ₃ to represent, a scan signal is supplied to the gate line and the source line is written into the video voltage D ₁ during the operation of the pixel in each block of FIG. This operation is the same when the same video voltage D ₁ is written in the period T ₁ to T ₃ or when a different video voltage is written.

另一方面，圖9C是示出分別對IDS驅動下的源極線SL及閘極線GL供應的信號的波形的時序圖。在IDS驅動中以低速的圖框頻率(例如1Hz)工作。一個圖框期間用期間T₁表示，其中將寫入視頻電壓的期間表示為期間T_W，將視頻電壓的保持期間表示為期間T_RET。在IDS驅動中，在期間T_W中對閘極線供應掃描信號，將源極線的視頻電壓D₁寫入到像素，在期間T_RET中將閘極線固定為L位準的電壓，使電晶體M1成為非導通狀態而將暫時寫入到的視頻電壓D₁保持在像素中。另外，低圖框頻率例如可以為0.1Hz以上且低於60Hz。 On the other hand, FIG. 9C is a timing chart showing waveforms of signals supplied to the source line SL and the gate line GL driven by the IDS, respectively. It operates at a low frame frequency (eg 1 Hz) in the IDS drive. One frame period is represented by a period T ₁ in which a period in which a video voltage is written is expressed as a period T _W , and a period in which a video voltage is held is represented as a period T _RET . In the IDS driving, a scan signal is supplied to the gate line during the period T _W , the video voltage D _{1 of the} source line is written to the pixel, and the gate line is fixed to the L level voltage during the period T _RET . The transistor M1 is rendered non-conductive and the video voltage D ₁ temporarily written is held in the pixel. In addition, the low frame frequency may be, for example, 0.1 Hz or more and less than 60 Hz.

圖9D示出切換上述通常驅動模式與IDS驅動時的狀態遷移圖。狀態C1表示IDS驅動模式，狀態C2表示通常驅動模式。 Fig. 9D shows a state transition diagram when the above-described normal driving mode and IDS driving are switched. State C1 represents the IDS drive mode and state C2 represents the normal drive mode.

狀態C1及C2對應於顯示內容而不同。例如，在進行圖5A和圖5B所示的鐘錶的顯示時，在液晶元件LC及發光元件EL的兩者中進行IDS驅動是有效的。另外，例如，驅動液晶元件LC及發光元件EL在畫面的整體上顯示動態影像時，進行通常驅動模式是有效的。 The states C1 and C2 differ depending on the display content. For example, when the display of the timepiece shown in FIGS. 5A and 5B is performed, it is effective to perform IDS driving in both of the liquid crystal element LC and the light-emitting element EL. Further, for example, when the liquid crystal element LC and the light-emitting element EL are driven to display a moving image on the entire screen, it is effective to perform the normal driving mode.

另外，使用圖10A至圖10E說明利用圖4B所說明的光感測器44的電子裝置40中的顯示裝置的顯示模式的切換。 In addition, switching of the display mode of the display device in the electronic device 40 using the photo sensor 44 illustrated in FIG. 4B will be described using FIGS. 10A to 10E.

電子裝置40可以根據包含藉由光感測器44取得的照度資訊的信號切換工作模式。在圖10A的方塊圖中示出光感測器44及應用處理器99。 The electronic device 40 can switch the operating mode according to a signal including the illuminance information obtained by the photo sensor 44. Photosensor 44 and application processor 99 are shown in the block diagram of FIG. 10A.

在圖10A中，光感測器44例如具有生成對應於照度的信號S_ILL的功能。應用處理器99具有根據信號S_ILL切換顯示模式的功能。 In FIG. 10A, the photo sensor 44 has, for example, a function of generating a signal S _ILL corresponding to illuminance. The application processor 99 has a function of switching the display mode in accordance with the signal S _ILL .

另外，圖10B至圖10D是用來說明顯示裝置根據照度可能會採用 的顯示模式的像素的示意圖。在圖10B至圖10D中，與圖3B同樣地，示出像素電路15、像素電路17、液晶元件LC、發光元件EL、開口21、液晶元件LC所具有的反射電極所反射的反射光12以及從開口21射出的發光元件EL所發射的光16。 In addition, Figs. 10B to 10D are schematic views for explaining pixels of a display mode in which the display device may adopt according to illuminance. 10B to 10D, similarly to FIG. 3B, the pixel circuit 15, the pixel circuit 17, the liquid crystal element LC, the light-emitting element EL, the opening 21, and the reflected light 12 reflected by the reflective electrode of the liquid crystal element LC are shown. The light 16 emitted from the light-emitting element EL emitted from the opening 21.

作為顯示裝置10可取的顯示模式舉出圖10B至圖10D所示的反射顯示模式(R mode)、反射+發光顯示模式(ER mode)以及發光顯示模式(E mode)來進行說明。 The display mode that can be taken as the display device 10 will be described with reference to the reflective display mode (R mode), the reflective + light-emitting display mode (ER mode), and the light-emitting display mode (E mode) shown in FIGS. 10B to 10D.

反射顯示模式是指藉由驅動像素所具有的液晶元件調節反射光的強度來控制灰階的顯示模式。明確而言，如圖10B所示的像素的示意圖那樣，利用液晶元件LC所具有的反射電極調節反射光12的強度來控制灰階。 The reflective display mode refers to a display mode in which the gray scale is controlled by adjusting the intensity of the reflected light by the liquid crystal element of the driving pixel. Specifically, as shown in the schematic diagram of the pixel shown in FIG. 10B, the intensity of the reflected light 12 is adjusted by the reflective electrode of the liquid crystal element LC to control the gray scale.

反射+發光顯示模式(ER mode)是指藉由利用液晶元件的驅動及發光元件的驅動調節反射光及發光元件的光的強度的兩者來控制灰階的顯示模式。明確而言，如圖10C所示的像素的示意圖那樣，利用液晶元件LC所具有的反射電極調節反射光12的強度，並且調節發光元件EL從開口21射出的光16的強度，來控制灰階。藉由將上述圖7A和圖7B所示的顯示裝置的工作適用於圖10C中的反射+發光顯示模式下的工作，可以實現顯示品質的提高及功耗的減少。 The ER mode refers to a display mode in which the gray scale is controlled by both the driving of the liquid crystal element and the driving of the light emitting element to adjust the intensity of the reflected light and the light of the light emitting element. Specifically, as shown in the schematic diagram of the pixel shown in FIG. 10C, the intensity of the reflected light 12 is adjusted by the reflective electrode of the liquid crystal element LC, and the intensity of the light 16 emitted from the opening 21 by the light-emitting element EL is adjusted to control the gray scale. . By applying the operation of the display device shown in FIGS. 7A and 7B described above to the operation in the reflection + illumination display mode of FIG. 10C, it is possible to achieve an improvement in display quality and a reduction in power consumption.

注意，在本說明書中，將像上述反射+發光顯示模式(ER mode)那樣的組合發光元件EL(第一顯示元件)和液晶元件LC(第二顯示元件)的顯示稱為混合型顯示。 Note that in the present specification, the display of the combined light-emitting element EL (first display element) and the liquid crystal element LC (second display element) such as the above-described reflection + light-emitting display mode (ER mode) is referred to as a hybrid display.

混合型顯示是指：在一個面板中，同時使用反射光和自發光，彼此補充色調或光強度，來顯示文字和/或影像的方法。此外，混合型顯示是指：在一個像素或一個子像素中，使用來自多個顯示元件的光， 來顯示文字和/或影像的方法。但是，當局部性地觀察進行混合型顯示的混合型顯示器時，有時包括：使用多個顯示元件中的任一個進行顯示的像素或子像素；以及使用多個顯示元件中的兩個以上進行顯示的像素或子像素。 The hybrid display refers to a method of displaying text and/or images by using both reflected light and self-illumination in one panel, complementing each other with hue or light intensity. Further, the hybrid display refers to a method of displaying characters and/or images using light from a plurality of display elements in one pixel or one sub-pixel. However, when a hybrid display that performs hybrid display is observed locally, it may include: a pixel or a sub-pixel that is displayed using any one of a plurality of display elements; and two or more of a plurality of display elements are used. The pixel or subpixel displayed.

注意，在本說明書等中，混合型顯示滿足上述表現中的任一個或多個。 Note that in the present specification and the like, the hybrid display satisfies any one or more of the above expressions.

此外，混合型顯示器在一個像素或一個子像素中包括多個顯示元件。另外，作為多個顯示元件，例如可以舉出使光反射的反射型元件和發射光的自發光元件。注意，反射型元件和自發光元件可以分別獨立地被控制。混合型顯示器具有在顯示部中使用反射光和自發光中的任一個或兩個來顯示文字和/或影像的功能。 Further, the hybrid display includes a plurality of display elements in one pixel or one sub-pixel. Further, examples of the plurality of display elements include a reflective element that reflects light and a self-luminous element that emits light. Note that the reflective element and the self-illuminating element can be independently controlled, respectively. The hybrid display has a function of displaying characters and/or images using either or both of reflected light and self-luminous light in the display portion.

發光顯示模式(E mode)是驅動發光元件調節光的強度來控制灰階的顯示模式。明確而言，如圖10D所示的像素的示意圖那樣，發光元件EL調節從開口21發射的光16的強度控制灰階。藉由將上述圖7A和圖7B所示的顯示裝置的工作適用於圖10D中的發光顯示模式下的工作，可以實現功耗的減少。 The light mode (E mode) is a display mode in which the light-emitting element is driven to adjust the intensity of light to control the gray scale. Specifically, as in the schematic diagram of the pixel shown in FIG. 10D, the light-emitting element EL adjusts the intensity of the light 16 emitted from the opening 21 to control the gray scale. By applying the operation of the display device shown in FIGS. 7A and 7B described above to the operation in the light-emitting display mode in FIG. 10D, reduction in power consumption can be achieved.

圖10E示出上述三種模式(反射顯示模式、反射+發光顯示模式、發光顯示模式)的狀態遷移圖。狀態C3示出反射顯示模式，狀態C4示出反射+發光顯示模式，狀態C5示出發光顯示模式。 FIG. 10E shows a state transition diagram of the above three modes (reflective display mode, reflective + light emitting display mode, and light emitting display mode). State C3 shows a reflective display mode, state C4 shows a reflective + illuminated display mode, and state C5 shows a lighted display mode.

如圖10E所示，根據照度可取處於狀態C3至狀態C5中的任一個狀態的顯示模式。例如，在如室外等照度高的情況下，可取狀態C3。另外，在如從室外移動到室內時等照度變低的情況下，從狀態C3轉移到狀態C5。另外，在即使在室內照度也高且能夠進行利用反射光的灰階顯示的情況下，從狀態C5轉移到狀態C4。 As shown in FIG. 10E, a display mode in any of the states C3 to C5 can be taken according to the illuminance. For example, in the case where the illuminance such as outdoor is high, the state C3 is preferable. Further, when the illuminance is low when moving from the outdoor to the indoor, the state transitions from the state C3 to the state C5. Further, even when the indoor illuminance is high and the gray scale display using the reflected light can be performed, the state transitions from the state C5 to the state C4.

如上所述，藉由採用根據照度切換顯示模式的結構，可以減少利用發光元件的光的強度的灰階顯示的頻率，該發光元件的功耗較大。由此，可以降低顯示裝置的功耗。 As described above, by adopting a configuration in which the display mode is switched in accordance with the illuminance, the frequency of the gray scale display using the intensity of the light of the light-emitting element can be reduced, and the power consumption of the light-emitting element is large. Thereby, the power consumption of the display device can be reduced.

〈閘極驅動器的結構實例〉 <Structural example of gate driver>

接著，對可用於上述圖1等所說明的閘極驅動器20、22的移位暫存器的具體例子進行說明。 Next, a specific example of a shift register which can be used for the gate drivers 20 and 22 described above with reference to FIG. 1 and the like will be described.

圖11A示出可以輸出m+2級脈衝的移位暫存器的電路結構的一個例子。圖11A的移位暫存器可以藉由來自外部的起動脈衝SP、時脈信號CLK1至CLK4、脈衝寬度控制信號PWC1至PWC4、重設信號RES對輸出端子OUT_1至OUT_m+2輸出脈衝。雖然未圖示，但是重設信號RES、控制信號Φ及控制信號ΦB是分別供應到不同佈線的信號。另外，輸出端子OUT_1至OUT_m相當於上述閘極線GL_EL[1]至[m]、GL_LC[1]至[m]，脈衝相當於掃描信號。 Fig. 11A shows an example of a circuit configuration of a shift register which can output m+2 stage pulses. The shift register of FIG. 11A can output pulses to the output terminals OUT_1 to OUT_m+2 by the start pulse SP, the clock signals CLK1 to CLK4, the pulse width control signals PWC1 to PWC4, and the reset signal RES from the outside. Although not shown, the reset signal RES, the control signal Φ, and the control signal ΦB are signals respectively supplied to different wirings. Further, the output terminals OUT_1 to OUT_m correspond to the above-described gate lines GL _EL [1] to [m], GL _LC [1] to [m], and the pulses correspond to scan signals.

電路SR被供應圖11B所示的各信號。電路SR_DUM被供應圖11C所示的各信號。供應到電路SR及電路SR_DUM的時脈信號CLK1至CLK4、脈衝寬度控制信號PWC1至PWC4根據級而不同。LIN是從移位暫存器的移位方向的上級一側供應的信號。RIN是從移位暫存器的移位方向的下級一側供應的信號。SROUT是供應到下一級移位暫存器的信號。OUT是供應到成為負載的閘極線的信號。 The circuit SR is supplied with the signals shown in Fig. 11B. The circuit SR _DUM is supplied with the signals shown in Fig. 11C. The clock signals CLK1 to CLK4 supplied to the circuit SR and the circuit SR _DUM and the pulse width control signals PWC1 to PWC4 differ depending on the stages. LIN is a signal supplied from the upper side of the shift direction of the shift register. RIN is a signal supplied from the lower side of the shift register of the shift register. SROUT is the signal supplied to the next stage shift register. OUT is the signal supplied to the gate line that becomes the load.

圖12A示出電路SR的電路結構的一個例子。圖12A所示的電路700包括電晶體701至電晶體709。圖12A所示的電路710包括電晶體711至電晶體713。圖12A所示的電路730包括電晶體721至電晶體723。在圖式中，電晶體701至電晶體709、電晶體711至電晶體713以及電晶體721至電晶體723是單閘極電晶體，但是也可以是具有背閘極的 雙閘極電晶體。同樣地，圖12B示出電路SR_DUM的電路結構的一個例子。 Fig. 12A shows an example of the circuit configuration of the circuit SR. The circuit 700 shown in FIG. 12A includes a transistor 701 to a transistor 709. The circuit 710 shown in FIG. 12A includes a transistor 711 to a transistor 713. The circuit 730 shown in FIG. 12A includes a transistor 721 to a transistor 723. In the drawings, the transistors 701 to 709, the transistors 711 to 713, and the transistors 721 to 723 are single gate transistors, but may also be double gate transistors having back gates. Similarly, Fig. 12B shows an example of the circuit configuration of the circuit SR _DUM .

圖13為示出脈衝寬度控制信號PWC1至PWC4、時脈信號CLK1至CLK4、起動脈衝SP及輸出端子OUT_1至OUT_m的波形的時序圖。在圖13所示的時序圖中，上半期間相當於圖7A所示的以虛線箭頭23表示的依次對各行輸出掃描信號的期間P1。另外，下半期間相當於圖7A所示的以虛線箭頭25表示的只對規定的行輸出掃描信號的期間P2。 FIG. 13 is a timing chart showing waveforms of the pulse width control signals PWC1 to PWC4, the clock signals CLK1 to CLK4, the start pulse SP, and the output terminals OUT_1 to OUT_m. In the timing chart shown in FIG. 13, the upper half period corresponds to the period P1 in which the scanning signals are sequentially output to the respective lines indicated by the broken line arrow 23 shown in FIG. 7A. Further, the lower half period corresponds to the period P2 in which the scanning signal is output only to the predetermined line indicated by the broken line arrow 25 shown in FIG. 7A.

在期間P1中，根據起動脈衝SP、脈衝寬度控制信號PWC1至PWC4、時脈信號CLK1至CLK4，依次輸出脈衝。 In the period P1, pulses are sequentially output in accordance with the start pulse SP, the pulse width control signals PWC1 to PWC4, and the clock signals CLK1 to CLK4.

另一方面，在第二期間P2中，為了只對規定的行輸出脈衝，在一定期間將脈衝寬度控制信號PWC1至PWC4固定為L位準。例如，在圖13中，對輸出端子OUT_1、輸出端子OUT_2、輸出端子OUT_m-1及OUT_m輸出脈衝，而不對輸出端子OUT_j及OUT_j+1輸出脈衝。在此情況下，在期間Pa、期間Pc與期間P1同樣地進行利用脈衝寬度控制信號PWC1至PWC4的觸發式操作(toggle operation)，在期間Pb將脈衝寬度控制信號PWC1至PWC4固定為L位準。藉由將脈衝寬度控制信號PWC1至PWC4固定為L位準，輸出端子OUT_j及OUT_j+1成為L位準，因此不輸出脈衝。 On the other hand, in the second period P2, in order to output a pulse only to a predetermined line, the pulse width control signals PWC1 to PWC4 are fixed to the L level for a certain period of time. For example, in FIG. 13, pulses are output to the output terminal OUT_1, the output terminal OUT_2, the output terminals OUT_m-1, and OUT_m, and the output terminals OUT_j and OUT_j+1 are not output. In this case, the trigger operation using the pulse width control signals PWC1 to PWC4 is performed in the period Pa and the period Pc in the same manner as the period P1, and the pulse width control signals PWC1 to PWC4 are fixed to the L level during the period Pb. . By fixing the pulse width control signals PWC1 to PWC4 to the L level, the output terminals OUT_j and OUT_j+1 become the L level, and therefore no pulse is output.

如上所述，可以在不按區域分割閘極驅動器的情況下停止對規定的行的掃描信號的輸出。 As described above, the output of the scan signal for the prescribed line can be stopped without dividing the gate driver by the area.

實施方式2 Embodiment 2

在本實施方式中，關於本發明的一個實施方式的顯示裝置，對補充上述實施方式1中說明的結構實例及電路結構實例進行說明。 In the present embodiment, a configuration example and a circuit configuration example described in the above-described first embodiment will be described with respect to a display device according to an embodiment of the present invention.

[結構例子] [Structural example]

圖14A是示出顯示裝置400的結構的一個例子的方塊圖。顯示裝置400包括在顯示部362中排列為矩陣狀的多個像素410。另外，顯示裝置400包括電路GD及電路SD。另外，包括與在方向R上排列的多個像素410及電路GD電連接的多個佈線G1、多個佈線G2、多個佈線ANO及多個佈線CSCOM。另外，包括與在方向C上排列的多個像素410及電路SD電連接的多個佈線S1及多個佈線S2。 FIG. 14A is a block diagram showing an example of the configuration of the display device 400. The display device 400 includes a plurality of pixels 410 arranged in a matrix in the display portion 362. In addition, the display device 400 includes a circuit GD and a circuit SD. Further, a plurality of wirings G1, a plurality of wirings G2, a plurality of wirings ANO, and a plurality of wirings CSCOM electrically connected to the plurality of pixels 410 and the circuits GD arranged in the direction R are included. Further, a plurality of wirings S1 and a plurality of wirings S2 electrically connected to the plurality of pixels 410 and the circuit SD arranged in the direction C are included.

注意，雖然為了簡化在此示出了包括一個電路GD和一個電路SD的結構，但是也可以分別設置用來驅動液晶元件的電路GD和電路SD以及用來驅動發光元件的電路GD和電路SD。 Note that although a structure including one circuit GD and one circuit SD is shown here for the sake of simplicity, the circuit GD and the circuit SD for driving the liquid crystal element and the circuit GD and the circuit SD for driving the light-emitting elements may be separately provided.

像素410包括反射型液晶元件及發光元件。在像素410中，液晶元件及發光元件具有彼此重疊的部分。 The pixel 410 includes a reflective liquid crystal element and a light emitting element. In the pixel 410, the liquid crystal element and the light emitting element have portions overlapping each other.

圖14B1示出像素410所包括的導電層311b的結構例子。導電層311b被用作像素410中的液晶元件的反射電極。另外，在導電層311b中設置有開口451。 FIG. 14B1 shows a structural example of the conductive layer 311b included in the pixel 410. The conductive layer 311b is used as a reflective electrode of the liquid crystal element in the pixel 410. In addition, an opening 451 is provided in the conductive layer 311b.

在圖14B1中，以虛線示出位於與導電層311b重疊的區域中的發光元件360。發光元件360與導電層311b所包括的開口451重疊。由此，發光元件360所發射出的光藉由開口451射出到顯示面一側。 In FIG. 14B1, the light-emitting element 360 located in a region overlapping the conductive layer 311b is shown by a broken line. The light emitting element 360 overlaps with the opening 451 included in the conductive layer 311b. Thereby, the light emitted from the light-emitting element 360 is emitted to the display surface side through the opening 451.

在圖14B1中，在方向R上相鄰的像素410是對應於不同的顏色的像素。此時，如圖14B1所示，較佳為在方向R上排列的多個像素中開口451以不設置在一直線上的方式分別設置於導電層311b的不同位置上。由此，可以將相鄰的兩個發光元件360分開地配置，從而可以抑制發光元件360所發射出的光入射到相鄰的像素410所包括的彩色層的現象(也稱為串擾)。另外，由於可以將相鄰的兩個發光元件360分 開地配置，因此即使利用陰影遮罩等分別製造發光元件360的EL層，也可以實現高解析度的顯示裝置。 In FIG. 14B1, adjacent pixels 410 in the direction R are pixels corresponding to different colors. At this time, as shown in FIG. 14B1, it is preferable that the plurality of pixels arranged in the direction R are provided at different positions of the conductive layer 311b so as not to be disposed on the straight line. Thereby, the adjacent two light-emitting elements 360 can be separately disposed, so that the phenomenon that light emitted from the light-emitting element 360 is incident on the color layer included in the adjacent pixel 410 (also referred to as crosstalk) can be suppressed. Further, since the adjacent two light-emitting elements 360 can be disposed separately, even if the EL layer of the light-emitting element 360 is separately manufactured by a shadow mask or the like, a high-resolution display device can be realized.

另外，也可以採用圖14B2所示的排列。 Alternatively, the arrangement shown in Fig. 14B2 can be employed.

當開口451的總面積相對於非開口部的總面積的比例過大時，使用液晶元件的顯示會變暗。另外，當開口451的總面積相對於非開口部的總面積的比例過小時，使用發光元件360的顯示會變暗。 When the ratio of the total area of the opening 451 to the total area of the non-opening portion is excessively large, the display using the liquid crystal element becomes dark. Further, when the ratio of the total area of the opening 451 to the total area of the non-opening portion is too small, the display using the light-emitting element 360 becomes dark.

另外，當設置於被用作反射電極的導電層311b中的開口451的面積過小時，發光元件360所發射的光的提取效率變低。 In addition, when the area of the opening 451 provided in the conductive layer 311b used as the reflective electrode is too small, the extraction efficiency of light emitted from the light-emitting element 360 becomes low.

開口451的形狀例如可以為多角形、四角形、橢圓形、圓形或十字狀等的形狀。另外，也可以為細長的條狀、狹縫狀、方格狀的形狀。另外，也可以以靠近相鄰的像素的方式配置開口451。較佳的是，將開口451配置為靠近顯示相同的顏色的其他像素。由此，可以抑制產生串擾。 The shape of the opening 451 may be, for example, a polygonal shape, a quadrangular shape, an elliptical shape, a circular shape, or a cross shape. Further, it may have an elongated strip shape, a slit shape, or a square shape. Alternatively, the opening 451 may be disposed in close proximity to adjacent pixels. Preferably, the opening 451 is configured to be close to other pixels displaying the same color. Thereby, crosstalk can be suppressed from occurring.

[電路結構例子] [circuit structure example]

圖15是示出像素410的結構例子的電路圖。圖15示出相鄰的兩個像素410。 FIG. 15 is a circuit diagram showing a structural example of the pixel 410. FIG. 15 shows two adjacent pixels 410.

像素410包括開關SW1、電容器C1、液晶元件340、開關SW2、電晶體M、電容器C2以及發光元件360等。另外，佈線G1、佈線G2、佈線ANO、佈線CSCOM、佈線S1及佈線S2與像素410電連接。另外，圖15示出與液晶元件340電連接的佈線VCOM1以及與發光元件360電連接的佈線VCOM2。 The pixel 410 includes a switch SW1, a capacitor C1, a liquid crystal element 340, a switch SW2, a transistor M, a capacitor C2, a light-emitting element 360, and the like. Further, the wiring G1, the wiring G2, the wiring ANO, the wiring CSCOM, the wiring S1, and the wiring S2 are electrically connected to the pixel 410. In addition, FIG. 15 shows a wiring VCOM1 electrically connected to the liquid crystal element 340 and a wiring VCOM2 electrically connected to the light emitting element 360.

圖15示出將電晶體用於開關SW1及開關SW2時的例子。 FIG. 15 shows an example in which a transistor is used for the switch SW1 and the switch SW2.

在開關SW1中，閘極與佈線G1連接，源極和汲極中的一個與佈線S1連接，源極和汲極中的另一個與電容器C1的一個電極及液晶元件340的一個電極連接。在電容器C1中，另一個電極與佈線CSCOM連接。在液晶元件340中，另一個電極與佈線VCOM1連接。 In the switch SW1, the gate is connected to the wiring G1, one of the source and the drain is connected to the wiring S1, and the other of the source and the drain is connected to one electrode of the capacitor C1 and one electrode of the liquid crystal element 340. In the capacitor C1, the other electrode is connected to the wiring CSCOM. In the liquid crystal element 340, the other electrode is connected to the wiring VCOM1.

在開關SW2中，閘極與佈線G2連接，源極和汲極中的一個與佈線S2連接，源極和汲極中的另一個與電容器C2的一個電極及電晶體M的閘極連接。在電容器C2中，另一個電極與電晶體M的源極和汲極中的一個及佈線ANO連接。在電晶體M中，源極和汲極中的另一個與發光元件360的一個電極連接。在發光元件360中，另一個電極與佈線VCOM2連接。 In the switch SW2, the gate is connected to the wiring G2, one of the source and the drain is connected to the wiring S2, and the other of the source and the drain is connected to one electrode of the capacitor C2 and the gate of the transistor M. In the capacitor C2, the other electrode is connected to one of the source and the drain of the transistor M and the wiring ANO. In the transistor M, the other of the source and the drain is connected to one electrode of the light-emitting element 360. In the light-emitting element 360, the other electrode is connected to the wiring VCOM2.

圖15示出電晶體M包括夾著半導體的兩個互相連接著的閘極的例子。由此，可以提高電晶體M能夠流過的電流量。 Fig. 15 shows an example in which the transistor M includes two interconnected gates sandwiching a semiconductor. Thereby, the amount of current that the transistor M can flow can be increased.

可以對佈線G1供應將開關SW1控制為導通狀態或非導通狀態的信號。可以對佈線VCOM1供應規定的電位。可以對佈線S1供應控制液晶元件340所具有的液晶的配向狀態的信號。可以對佈線CSCOM供應規定的電位。 The wiring G1 can be supplied with a signal that controls the switch SW1 to be in an on state or a non-conduction state. A predetermined potential can be supplied to the wiring VCOM1. A signal for controlling the alignment state of the liquid crystal of the liquid crystal element 340 can be supplied to the wiring S1. The prescribed potential can be supplied to the wiring CSCOM.

可以對佈線G2供應將開關SW2控制為導通狀態或非導通狀態的信號。可以對佈線VCOM2及佈線ANO分別供應產生用來使發光元件360發光的電位差的電位。可以對佈線S2供應控制電晶體M的導通狀態的信號。 A signal for controlling the switch SW2 to be in an on state or a non-conduction state may be supplied to the wiring G2. A potential at which a potential difference for causing the light-emitting element 360 to emit light can be supplied to the wiring VCOM2 and the wiring ANO, respectively. The wiring S2 can be supplied with a signal for controlling the conduction state of the transistor M.

圖15所示的像素410例如在以反射模式進行顯示時，可以利用供應給佈線G1及佈線S1的信號驅動，並利用液晶元件340的光學調變而進行顯示。另外，在以發光模式進行顯示時，可以利用供應給佈線 G2及佈線S2的信號驅動，並使發光元件360發光而進行顯示。另外，在以兩個模式驅動時，可以利用分別供應給佈線G1、佈線G2、佈線S1及佈線S2的信號而驅動。 For example, when the pixel 410 shown in FIG. 15 is displayed in the reflection mode, it can be driven by a signal supplied to the wiring G1 and the wiring S1, and displayed by optical modulation of the liquid crystal element 340. Further, when displaying in the light-emitting mode, it is possible to drive by the signal supplied to the wiring G2 and the wiring S2, and to cause the light-emitting element 360 to emit light for display. Further, when driving in two modes, it is possible to drive by signals supplied to the wiring G1, the wiring G2, the wiring S1, and the wiring S2, respectively.

實施方式3 Embodiment 3

在本實施方式中，說明本發明的一個實施方式的顯示裝置的剖面結構的例子。 In the present embodiment, an example of a cross-sectional structure of a display device according to an embodiment of the present invention will be described.

[剖面結構實例1] [Profile structure example 1]

圖16示出截斷包括FPC372的區域的一部分、包括電路364的區域的一部分及包括顯示部362的區域的一部分時的剖面的一個例子。 16 shows an example of a cross section when a part of a region including the FPC 372, a portion of the region including the circuit 364, and a portion of the region including the display portion 362 are cut off.

顯示面板在基板351與基板361之間包括絕緣層220。另外，在基板351與絕緣層220之間包括發光元件360、電晶體201、電晶體205、電晶體206及彩色層134等。另外，在絕緣層220與基板361之間包括液晶元件340、彩色層135等。另外，基板361隔著黏合層161與絕緣層220黏合，基板351隔著黏合層162與絕緣層220黏合。 The display panel includes an insulating layer 220 between the substrate 351 and the substrate 361. Further, a light-emitting element 360, a transistor 201, a transistor 205, a transistor 206, a color layer 134, and the like are included between the substrate 351 and the insulating layer 220. Further, a liquid crystal element 340, a color layer 135, and the like are included between the insulating layer 220 and the substrate 361. Further, the substrate 361 is bonded to the insulating layer 220 via the adhesive layer 161, and the substrate 351 is bonded to the insulating layer 220 via the adhesive layer 162.

作為彩色層134，可以使用透過紅色(R)、綠色(G)或藍色(B)等的原色濾色片。另一方面，作為彩色層135，可以使用透過青色(cyan)、洋紅色(magenta)、黃色(yellow)等的補充色濾色片。 As the color layer 134, a primary color filter that transmits red (R), green (G), or blue (B) can be used. On the other hand, as the color layer 135, a complementary color filter that transmits cyan, magenta, yellow, or the like can be used.

電晶體206與液晶元件340電連接，而電晶體205與發光元件360電連接。因為電晶體205和電晶體206都形成在絕緣層220的基板351一側的面上，所以它們可以藉由同一製程製造。 The transistor 206 is electrically connected to the liquid crystal element 340, and the transistor 205 is electrically connected to the light emitting element 360. Since the transistor 205 and the transistor 206 are both formed on the surface of the insulating layer 220 on the side of the substrate 351, they can be fabricated by the same process.

在基板361上設置有彩色層135、遮光層136、絕緣層218及被用作液晶元件340的共用電極的導電層313、配向膜133b、絕緣層117 等。絕緣層117被用作用來保持液晶元件340的單元間隙的間隔物。 A color layer 135, a light shielding layer 136, an insulating layer 218, a conductive layer 313 serving as a common electrode of the liquid crystal element 340, an alignment film 133b, an insulating layer 117, and the like are provided on the substrate 361. The insulating layer 117 is used as a spacer for holding the cell gap of the liquid crystal element 340.

在絕緣層220的基板351一側設置有絕緣層211、絕緣層212、絕緣層213、絕緣層214、絕緣層215等絕緣層。絕緣層211的一部分被用作各電晶體的閘極絕緣層。絕緣層212、絕緣層213及絕緣層214以覆蓋各電晶體等的方式設置。此外，絕緣層215以覆蓋絕緣層214的方式設置。絕緣層214及絕緣層215具有平坦化層的功能。此外，這裡示出作為覆蓋電晶體等的絕緣層包括絕緣層212、絕緣層213及絕緣層214的三層的情況，但是絕緣層不侷限於此，也可以為四層以上、單層或兩層。如果不需要，則可以不設置用作平坦化層的絕緣層214。 An insulating layer such as an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, and an insulating layer 215 is provided on the substrate 351 side of the insulating layer 220. A portion of the insulating layer 211 is used as a gate insulating layer of each of the transistors. The insulating layer 212, the insulating layer 213, and the insulating layer 214 are provided to cover the respective transistors and the like. Further, the insulating layer 215 is disposed to cover the insulating layer 214. The insulating layer 214 and the insulating layer 215 have a function of a planarization layer. In addition, the case where the insulating layer covering the transistor or the like includes the insulating layer 212, the insulating layer 213, and the insulating layer 214 is shown here, but the insulating layer is not limited thereto, and may be four or more layers, a single layer, or two. Floor. If not required, the insulating layer 214 serving as a planarization layer may not be provided.

另外，電晶體201、電晶體205及電晶體206包括其一部分用作閘極的導電層221、其一部分用作源極或汲極的導電層222、半導體層231。在此，對經過同一導電膜的加工而得到的多個層附有相同的陰影圖案。 Further, the transistor 201, the transistor 205, and the transistor 206 include a conductive layer 221 whose portion serves as a gate, a conductive layer 222 which serves as a source or a drain, and a semiconductor layer 231. Here, a plurality of layers obtained by processing the same conductive film are attached with the same hatching pattern.

液晶元件340是反射型液晶元件。液晶元件340包括層疊有導電層311a、液晶312及導電層313的疊層結構。另外，設置有與導電層311a的基板351一側接觸的反射可見光的導電層311b。導電層311b包括開口251。另外，導電層311a及導電層313包含使可見光透過的材料。此外，在液晶312和導電層311a之間設置有配向膜133a，並且在液晶312和導電層313之間設置有配向膜133b。此外，在基板361的外側的面上設置有偏光板130。 The liquid crystal element 340 is a reflective liquid crystal element. The liquid crystal element 340 includes a laminated structure in which a conductive layer 311a, a liquid crystal 312, and a conductive layer 313 are laminated. Further, a conductive layer 311b that reflects visible light that is in contact with the substrate 351 side of the conductive layer 311a is provided. The conductive layer 311b includes an opening 251. Further, the conductive layer 311a and the conductive layer 313 include a material that transmits visible light. Further, an alignment film 133a is provided between the liquid crystal 312 and the conductive layer 311a, and an alignment film 133b is provided between the liquid crystal 312 and the conductive layer 313. Further, a polarizing plate 130 is provided on the outer surface of the substrate 361.

在液晶元件340中，導電層311b具有反射可見光的功能，導電層313具有透過可見光的功能。從基板361一側入射的光被偏光板130偏振，透過導電層313、液晶312，且被導電層311b反射。而且，再次透過液晶312及導電層313而到達偏光板130。此時，由施加到導電層311b和導電層313之間的電壓控制液晶的配向，從而可以控制光的 光學調變。也就是說，可以控制經過偏光板130發射的光的強度。此外，由於特定的波長區域之外的光被彩色層135吸收，因此被提取的光例如呈現紅色。 In the liquid crystal element 340, the conductive layer 311b has a function of reflecting visible light, and the conductive layer 313 has a function of transmitting visible light. The light incident from the side of the substrate 361 is polarized by the polarizing plate 130, transmitted through the conductive layer 313, the liquid crystal 312, and reflected by the conductive layer 311b. Then, the liquid crystal 312 and the conductive layer 313 are again transmitted to the polarizing plate 130. At this time, the alignment of the liquid crystal is controlled by the voltage applied between the conductive layer 311b and the conductive layer 313, whereby the optical modulation of the light can be controlled. That is, the intensity of light emitted through the polarizing plate 130 can be controlled. Further, since light outside a specific wavelength region is absorbed by the color layer 135, the extracted light appears, for example, in red.

發光元件360是底部發射型發光元件。發光元件360具有從絕緣層220一側依次層疊有導電層191、EL層192及導電層193b的結構。另外，設置有覆蓋導電層193b的導電層193a。導電層193b包含反射可見光的材料，導電層191及導電層193a包含使可見光透過的材料。發光元件360所發射的光經過彩色層134、絕緣層220、開口251及導電層313等射出到基板361一側。 The light emitting element 360 is a bottom emission type light emitting element. The light-emitting element 360 has a structure in which a conductive layer 191, an EL layer 192, and a conductive layer 193b are laminated in this order from the insulating layer 220 side. In addition, a conductive layer 193a covering the conductive layer 193b is provided. The conductive layer 193b includes a material that reflects visible light, and the conductive layer 191 and the conductive layer 193a contain a material that transmits visible light. The light emitted from the light-emitting element 360 is emitted to the side of the substrate 361 through the color layer 134, the insulating layer 220, the opening 251, the conductive layer 313, and the like.

在此，如圖16所示，開口251較佳為設置有透過可見光的導電層311a。由此，液晶312在與開口251重疊的區域中也與其他區域同樣地配向，從而可以抑制因在該區域的境界部產生液晶的配向不良而產生非意圖的漏光。 Here, as shown in FIG. 16, the opening 251 is preferably provided with a conductive layer 311a that transmits visible light. Thereby, the liquid crystal 312 is also aligned in the same region as the other regions in the region overlapping the opening 251, and it is possible to suppress unintentional light leakage due to alignment failure of the liquid crystal generated in the boundary portion of the region.

在此，作為設置在基板361外側的面的偏光板130，既可以使用直線偏光板，也可以使用圓偏光板。作為圓偏光板，例如可以使用將直線偏光板和四分之一波相位差板層疊而成的偏光板。由此，可以抑制外光反射。另外，為了抑制外光反射，可以設置光擴散板。此外，藉由根據偏光板的種類調整用於液晶元件340的液晶元件的單元間隙、配向、驅動電壓等來實現所希望的對比度，即可。 Here, as the polarizing plate 130 provided on the surface outside the substrate 361, a linear polarizing plate or a circular polarizing plate may be used. As the circularly polarizing plate, for example, a polarizing plate in which a linear polarizing plate and a quarter-wave phase difference plate are laminated can be used. Thereby, external light reflection can be suppressed. Further, in order to suppress external light reflection, a light diffusion plate may be provided. Further, the desired contrast can be achieved by adjusting the cell gap, the alignment, the driving voltage, and the like of the liquid crystal element for the liquid crystal element 340 according to the type of the polarizing plate.

在覆蓋導電層191的端部的絕緣層216上設置有絕緣層217。絕緣層217具有抑制絕緣層220與基板351之間的距離過近的間隙物的功能。另外，當使用陰影遮罩(金屬遮罩)形成EL層192及導電層193a時，絕緣層217可以具有抑制該陰影遮罩接觸於被形成面的功能。另外，如果不需要則可以不設置絕緣層217。 An insulating layer 217 is provided on the insulating layer 216 covering the end of the conductive layer 191. The insulating layer 217 has a function of suppressing a spacer whose distance between the insulating layer 220 and the substrate 351 is too close. In addition, when the EL layer 192 and the conductive layer 193a are formed using a shadow mask (metal mask), the insulating layer 217 may have a function of suppressing the shadow mask from contacting the surface to be formed. In addition, the insulating layer 217 may not be provided if it is not required.

電晶體205的源極和汲極中的一個藉由導電層224與發光元件360的導電層191電連接。 One of the source and the drain of the transistor 205 is electrically connected to the conductive layer 191 of the light-emitting element 360 by the conductive layer 224.

電晶體206的源極和汲極中的另一個藉由連接部207與導電層311b電連接。導電層311a與導電層311b接觸，它們彼此電連接。在此，連接部207是使設置在絕緣層220的雙面上的導電層藉由形成在絕緣層220中的開口彼此連接的部分。 The other of the source and the drain of the transistor 206 is electrically connected to the conductive layer 311b by the connection portion 207. The conductive layer 311a is in contact with the conductive layer 311b, and they are electrically connected to each other. Here, the connection portion 207 is a portion that connects the conductive layers provided on both sides of the insulating layer 220 to each other by an opening formed in the insulating layer 220.

在基板351的不與基板361重疊的區域中設置有連接部204。連接部204藉由連接層242與FPC372電連接。連接部204具有與連接部207相同的結構。在連接部204的頂面上露出對與導電層311a同一的導電膜進行加工來獲得的導電層。因此，藉由連接層242可以使連接部204與FPC372電連接。 A connection portion 204 is provided in a region of the substrate 351 that does not overlap the substrate 361. The connection portion 204 is electrically connected to the FPC 372 via the connection layer 242. The connecting portion 204 has the same structure as the connecting portion 207. A conductive layer obtained by processing the same conductive film as the conductive layer 311a is exposed on the top surface of the connection portion 204. Therefore, the connection portion 204 can be electrically connected to the FPC 372 by the connection layer 242.

在設置有黏合層161的一部分的區域中設置有連接部252。在連接部252中，藉由連接器243使對與導電層311a同一的導電膜進行加工來獲得的導電層和導電層313的一部分電連接。由此，可以將從連接於基板351一側的FPC372輸入的信號或電位藉由連接部252供應到形成在基板361一側的導電層313。 A connecting portion 252 is provided in a region where a part of the adhesive layer 161 is provided. In the connection portion 252, the conductive layer obtained by processing the same conductive film as the conductive layer 311a by the connector 243 is electrically connected to a portion of the conductive layer 313. Thereby, a signal or a potential input from the FPC 372 connected to the substrate 351 side can be supplied to the conductive layer 313 formed on the side of the substrate 361 via the connection portion 252.

例如，連接器243可以使用導電粒子。作為導電粒子，可以採用表面覆蓋有金屬材料的有機樹脂或二氧化矽等的粒子。作為金屬材料，較佳為使用鎳或金，因為其可以降低接觸電阻。另外，較佳為使用如在鎳上還覆蓋有金等以層狀覆蓋有兩種以上的金屬材料的粒子。另外，連接器243較佳為採用能夠彈性變形或塑性變形的材料。此時，有時導電粒子的連接器243成為圖16所示那樣的在縱向上被壓扁的形狀。藉由具有該形狀，可以增大連接器243與電連接於該連接器的導電層的接觸面積，從而可以降低接觸電阻並抑制接觸不良等問題發生。 For example, the connector 243 can use conductive particles. As the conductive particles, an organic resin having a surface coated with a metal material or particles such as cerium oxide can be used. As the metal material, nickel or gold is preferably used because it can lower the contact resistance. Further, it is preferable to use particles in which two or more kinds of metal materials are layer-covered with gold or the like. Further, the connector 243 is preferably made of a material that is elastically deformable or plastically deformable. At this time, the connector 243 of the conductive particles may have a shape that is flattened in the longitudinal direction as shown in FIG. 16 . By having such a shape, the contact area of the connector 243 and the conductive layer electrically connected to the connector can be increased, so that contact resistance can be reduced and problems such as contact failure can be suppressed.

連接器243較佳為以由黏合層161覆蓋的方式配置。例如，可以將連接器243預先分散在被固化之前的黏合層161中。 The connector 243 is preferably disposed to be covered by the adhesive layer 161. For example, the connector 243 may be previously dispersed in the adhesive layer 161 before being cured.

在圖16中，作為電路364的例子，示出設置有電晶體201的例子。 In FIG. 16, as an example of the circuit 364, an example in which the transistor 201 is provided is shown.

在圖16中，作為電晶體201及電晶體205的例子，應用由兩個閘極夾著形成有通道的半導體層231的結構。一個閘極由導電層221構成，而另一個閘極由隔著絕緣層212與半導體層231重疊的導電層223構成。藉由採用這種結構，可以控制電晶體的臨界電壓。此時，也可以連接兩個閘極，並藉由對該兩個閘極供應同一信號來驅動電晶體。與其他電晶體相比，這種電晶體能夠提高場效移動率，而可以增大通態電流(on-state current)。其結果是，可以製造能夠高速驅動的電路。再者能夠縮小電路部的佔有面積。藉由使用通態電流大的電晶體，即使在使顯示面板大型化或高清晰化時佈線數增多，也可以降低各佈線的信號延遲，並且可以抑制顯示的不均勻。 In Fig. 16, as an example of the transistor 201 and the transistor 205, a structure in which a semiconductor layer 231 in which a via is formed is sandwiched by two gates is used. One gate is composed of a conductive layer 221, and the other gate is composed of a conductive layer 223 which is overlapped with the semiconductor layer 231 via an insulating layer 212. By adopting such a structure, the threshold voltage of the transistor can be controlled. At this time, it is also possible to connect two gates and drive the transistor by supplying the same signal to the two gates. Compared with other transistors, this transistor can increase the field effect mobility and increase the on-state current. As a result, a circuit that can be driven at a high speed can be manufactured. Furthermore, it is possible to reduce the occupied area of the circuit portion. By using a transistor having a large on-state current, even when the number of wirings is increased when the display panel is increased in size or height, the signal delay of each wiring can be reduced, and display unevenness can be suppressed.

電路364所包括的電晶體與顯示部362所包括的電晶體也可以具有相同的結構。此外，電路364所包括的多個電晶體可以都具有相同的結構或不同的結構。另外，顯示部362所包括的多個電晶體可以都具有相同的結構或不同的結構。 The transistor included in the circuit 364 and the transistor included in the display portion 362 may have the same structure. Moreover, the plurality of transistors included in circuit 364 may all have the same structure or different structures. In addition, the plurality of transistors included in the display portion 362 may have the same structure or different structures.

覆蓋各電晶體的絕緣層212和絕緣層213中的至少一個較佳為使用水或氫等雜質不容易擴散的材料。亦即，可以將絕緣層212或絕緣層213用作障壁膜。藉由採用這種結構，可以有效地抑制雜質從外部擴散到電晶體中，從而能夠實現可靠性高的顯示面板。 At least one of the insulating layer 212 and the insulating layer 213 covering each of the transistors is preferably a material which does not easily diffuse using impurities such as water or hydrogen. That is, the insulating layer 212 or the insulating layer 213 can be used as a barrier film. By adopting such a configuration, it is possible to effectively suppress diffusion of impurities from the outside into the transistor, and it is possible to realize a highly reliable display panel.

在基板361一側設置有覆蓋彩色層135、遮光層136的絕緣層218。絕緣層218可以具有平坦化層的功能。藉由使用絕緣層218可以使導電層313的表面大致平坦，可以使液晶312的配向狀態成為均勻。 An insulating layer 218 covering the color layer 135 and the light shielding layer 136 is provided on the substrate 361 side. The insulating layer 218 may have a function of a planarization layer. By using the insulating layer 218, the surface of the conductive layer 313 can be made substantially flat, and the alignment state of the liquid crystal 312 can be made uniform.

[剖面結構實例2] [Profile structure example 2]

本發明的一個實施方式的顯示面板如圖17所示那樣，可以採用具有設置在像素中的第一電晶體與第二電晶體重疊的區域的結構。藉由採用該結構，可以減小每一個像素的面積，從而可以製造能夠顯示高解析度的影像且像素密度高的顯示面板。 As shown in FIG. 17, the display panel according to an embodiment of the present invention may have a configuration in which a region in which a first transistor and a second transistor are disposed in a pixel overlap each other. By adopting this configuration, the area of each pixel can be reduced, and a display panel capable of displaying a high-resolution image and having a high pixel density can be manufactured.

例如，可以採用具有用來驅動發光元件360的電晶體的電晶體205與電晶體208重疊的區域的結構。另外，也可以採用具有用來驅動液晶元件340的電晶體206與電晶體205和電晶體208中的一個重疊的區域的結構。 For example, a structure having a region in which the transistor 205 for driving the transistor of the light-emitting element 360 overlaps the transistor 208 can be employed. In addition, a structure having a region in which the transistor 206 for driving the liquid crystal element 340 overlaps with one of the transistor 205 and the transistor 208 may also be employed.

[剖面結構實例3] [Profile structure example 3]

另外，本發明的一個實施方式的顯示面板如圖18所示那樣，可以採用將顯示面板300a與顯示面板300b隔著黏合層50貼在一起的結構。顯示面板300a在顯示部362a中包括液晶元件340及電晶體206，在驅動顯示部362a的電路364a中包括電晶體201a。顯示面板300b在顯示部362b中包括發光元件360及電晶體205、208，在驅動顯示部362b的電路364b中包括電晶體201b。 Further, as shown in FIG. 18, the display panel according to the embodiment of the present invention may have a structure in which the display panel 300a and the display panel 300b are attached together via the adhesive layer 50. The display panel 300a includes a liquid crystal element 340 and a transistor 206 in the display portion 362a, and a transistor 201a is included in the circuit 364a that drives the display portion 362a. The display panel 300b includes a light-emitting element 360 and transistors 205 and 208 in the display portion 362b, and a transistor 201b is included in the circuit 364b that drives the display portion 362b.

藉由採用該結構，可以使用分別對顯示面板300a及顯示面板300b適合的製程，可以提高良率。 By adopting this configuration, it is possible to use a process suitable for the display panel 300a and the display panel 300b, respectively, and the yield can be improved.

[各組件] [components]

下面，說明上述各組件。 Hereinafter, each of the above components will be described.

[基板] [substrate]

顯示面板所包括的基板可以使用具有平坦面的材料。作為提取來自顯示元件的光的一側的基板，使用使該光透過的材料。例如，可以 使用玻璃、石英、陶瓷、藍寶石或有機樹脂等的材料。 The substrate included in the display panel may use a material having a flat surface. As the substrate on the side from which the light from the display element is extracted, a material that transmits the light is used. For example, materials such as glass, quartz, ceramic, sapphire or organic resin can be used.

藉由使用厚度薄的基板，可以實現顯示面板的輕量化及薄型化。再者，藉由使用其厚度允許其具有撓性的基板，可以實現具有撓性的顯示面板。 By using a substrate having a small thickness, it is possible to reduce the weight and thickness of the display panel. Furthermore, a flexible display panel can be realized by using a substrate whose thickness allows it to have flexibility.

不提取發光的一側的基板也可以不具有透光性，所以除了上述基板之外也可以使用金屬基板等。由於金屬基板的導熱性高，容易將熱傳導到基板整體，因此能夠抑制顯示面板的局部溫度上升，所以是較佳的。為了獲得撓性或彎曲性，較佳為將金屬基板的厚度設定為10μm以上且200μm以下，更佳為20μm以上且50μm以下。 The substrate on the side where the light is not extracted may not have translucency, and therefore a metal substrate or the like may be used in addition to the above substrate. Since the metal substrate has high thermal conductivity and is easy to conduct heat to the entire substrate, it is preferable because the local temperature rise of the display panel can be suppressed. In order to obtain flexibility or flexibility, the thickness of the metal substrate is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less.

對構成金屬基板的材料沒有特別的限制，例如，較佳為使用鋁、銅、鎳等的金屬、鋁合金或不鏽鋼等的合金等。 The material constituting the metal substrate is not particularly limited. For example, a metal such as aluminum, copper or nickel, an alloy such as an aluminum alloy or stainless steel, or the like is preferably used.

另外，也可以使用進行過使金屬基板的表面氧化或在其表面上形成絕緣膜等絕緣處理的基板。例如，既可以採用旋塗法或浸漬法等塗佈法、電沉積法、蒸鍍法或濺射法等的方法形成絕緣膜，又可以藉由在氧氛圍下放置或加熱基板或者採用陽極氧化法等的方法，在基板的表面形成氧化膜。 Further, a substrate subjected to an insulating treatment such as oxidizing the surface of the metal substrate or forming an insulating film on the surface thereof may be used. For example, the insulating film may be formed by a coating method such as a spin coating method or a dipping method, an electrodeposition method, an evaporation method, or a sputtering method, or may be placed or heated in an oxygen atmosphere or anodized. A method such as a method forms an oxide film on the surface of the substrate.

作為具有撓性及對可見光的透過性的材料，例如可以舉出如下材料：聚酯樹脂諸如聚對苯二甲酸乙二醇酯(PET)或聚萘二甲酸乙二醇酯(PEN)等、聚丙烯腈樹脂、聚醯亞胺樹脂、聚甲基丙烯酸甲酯樹脂、聚碳酸酯(PC)樹脂、聚醚碸(PES)樹脂、聚醯胺樹脂、環烯徑樹脂、聚苯乙烯樹脂、聚醯胺醯亞胺樹脂、聚氯乙烯樹脂或聚四氟乙烯(PTFE)樹脂等。尤其是，較佳為使用熱膨脹係數低的材料，例如較佳為使用熱膨脹係數為30×10^-6/K以下的聚醯胺醯亞胺樹脂、聚醯亞胺樹脂以及PET等。另外，也可以使用將有機樹脂浸滲於玻璃纖維中而成的基板或 將無機填料混合到有機樹脂中來降低熱膨脹係數而成的基板。由於使用這種材料的基板的重量輕，所以使用該基板的顯示面板也可以實現輕量化。 Examples of the material having flexibility and transparency to visible light include, for example, a polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyether oxime (PES) resin, polyamine resin, cycloolefin resin, polystyrene resin, Polyamidoximine resin, polyvinyl chloride resin or polytetrafluoroethylene (PTFE) resin. In particular, a material having a low coefficient of thermal expansion is preferably used, and for example, a polyimide amide resin having a thermal expansion coefficient of 30 × 10 ^-6 /K or less, a polyimide resin, PET, or the like is preferably used. Further, a substrate obtained by impregnating an organic resin with a glass fiber or a substrate obtained by mixing an inorganic filler into an organic resin to reduce a thermal expansion coefficient may be used. Since the substrate using such a material is light in weight, the display panel using the substrate can also be made lighter.

當上述材料中含有纖維體時，作為纖維體使用有機化合物或無機化合物的高強度纖維。明確而言，高強度纖維是指拉力模數或楊氏模數高的纖維。其典型例子為聚乙烯醇類纖維、聚酯類纖維、聚醯胺類纖維、聚乙烯類纖維、芳族聚醯胺類纖維、聚對苯撐苯并雙唑纖維、玻璃纖維或碳纖維。作為玻璃纖維可以舉出使用E玻璃、S玻璃、D玻璃、Q玻璃等的玻璃纖維。可以將上述纖維體以織布或不織布的狀態使用，並且也可以使用在該纖維體中浸滲樹脂並使該樹脂固化而成的結構體作為具有撓性的基板。藉由作為具有撓性的基板使用由纖維體和樹脂構成的結構體，可以提高耐彎曲或局部擠壓所引起的破損的可靠性，所以是較佳的。 When the above material contains a fibrous body, a high-strength fiber of an organic compound or an inorganic compound is used as the fibrous body. Specifically, a high-strength fiber refers to a fiber having a high tensile modulus or a Young's modulus. Typical examples thereof are polyvinyl alcohol fibers, polyester fibers, polyamide fibers, polyethylene fibers, aromatic polyamide fibers, polyparaphenylene benzobisazole fibers, glass fibers or carbon fibers. Examples of the glass fiber include glass fibers such as E glass, S glass, D glass, and Q glass. The fibrous body may be used in a state of woven or non-woven fabric, and a structure in which the resin is impregnated with the resin and the resin is cured may be used as the flexible substrate. By using a structure composed of a fibrous body and a resin as a flexible substrate, it is possible to improve the reliability of breakage due to bending resistance or partial extrusion, which is preferable.

或者，可以將薄得足以具有撓性的玻璃、金屬等用於基板。或者，可以使用玻璃與樹脂材料由黏合層貼合在一起的複合材料。 Alternatively, glass, metal, or the like which is thin enough to have flexibility can be used for the substrate. Alternatively, a composite material in which a glass and a resin material are bonded together by an adhesive layer may be used.

另外，也可以在具有撓性的基板上層疊有保護顯示面板的表面免受損傷等的硬塗層(例如，氮化矽、氧化鋁等)、能夠分散按壓力的材質的層(例如，芳族聚醯胺樹脂層等)等。另外，為了抑制水分等導致顯示元件的使用壽命減少等，也可以在具有撓性的基板上層疊有低透水性的絕緣膜。例如，可以使用氮化矽、氧氮化矽、氮氧化矽、氧化鋁、氮化鋁等無機絕緣材料。 In addition, a hard coat layer (for example, tantalum nitride, alumina, or the like) that protects the surface of the display panel from damage or the like and a layer that can disperse the pressing force may be laminated on the flexible substrate (for example, Fang). A polyamidamine resin layer or the like). Further, in order to suppress a decrease in the service life of the display element due to moisture or the like, an insulating film having a low water permeability may be laminated on the flexible substrate. For example, an inorganic insulating material such as tantalum nitride, hafnium oxynitride, hafnium oxynitride, aluminum oxide, or aluminum nitride can be used.

作為基板也可以使用層疊有多個層的基板。尤其是，藉由採用具有玻璃層的結構，可以提高對水或氧的阻擋性，從而可以提供可靠性高的顯示面板。 As the substrate, a substrate in which a plurality of layers are laminated may be used. In particular, by adopting a structure having a glass layer, the barrier property against water or oxygen can be improved, and a highly reliable display panel can be provided.

[電晶體] [Optograph]

電晶體包括用作閘極電極的導電層、半導體層、用作源極電極的導電層、用作汲極電極的導電層以及用作閘極絕緣層的絕緣層。上面示出採用底閘極結構電晶體的情況。 The transistor includes a conductive layer serving as a gate electrode, a semiconductor layer, a conductive layer serving as a source electrode, a conductive layer serving as a gate electrode, and an insulating layer serving as a gate insulating layer. The case where the bottom gate structure transistor is employed is shown above.

注意，對本發明的一個實施方式的顯示裝置所包括的電晶體的結構沒有特別的限制。例如，可以採用平面型電晶體、交錯型電晶體或反交錯型電晶體。另外，還可以採用頂閘極型或底閘極型的電晶體結構。或者，也可以在通道的上下設置有閘極電極。 Note that the structure of the transistor included in the display device of one embodiment of the present invention is not particularly limited. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor can be used. In addition, a top gate type or a bottom gate type transistor structure can also be used. Alternatively, a gate electrode may be provided above and below the channel.

對用於電晶體的半導體材料的結晶性也沒有特別的限制，可以使用非晶半導體或具有結晶性的半導體(微晶半導體、多晶半導體、單晶半導體或其一部分具有結晶區域的半導體)。當使用具有結晶性的半導體時可以抑制電晶體的特性劣化，所以是較佳的。 The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystal region in a part thereof) can be used. When a semiconductor having crystallinity is used, deterioration of characteristics of the transistor can be suppressed, so that it is preferable.

此外，作為用於電晶體的半導體材料，可以使用能隙為2eV以上，較佳為2.5eV以上，更佳為3eV以上的金屬氧化物。典型地，可以使用包含銦的金屬氧化物等，例如可以使用後面說明的CAC-OS等。 Further, as the semiconductor material used for the transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more can be used. Typically, a metal oxide or the like containing indium can be used, and for example, CAC-OS or the like described later can be used.

另外，使用其能帶間隙比矽寬且載子密度小的金屬氧化物的電晶體由於其關態電流低，因此能夠長期間保持儲存於與電晶體串聯連接的電容器中的電荷。 Further, a transistor using a metal oxide having a band gap wider than that of 矽 and having a small carrier density is low in the off state, so that the charge stored in the capacitor connected in series to the transistor can be held for a long period of time.

作為半導體層例如可以採用包含銦、鋅及M(鋁、鈦、鎵、鍺、釔、鋯、鑭、鈰、錫、釹或鉿等金屬)的以“In-M-Zn類氧化物”表示的膜。 As the semiconductor layer, for example, "In-M-Zn-based oxide" including indium, zinc, and M (a metal such as aluminum, titanium, gallium, lanthanum, cerium, zirconium, hafnium, ytterbium, tin, antimony or bismuth) may be used. Membrane.

當構成半導體層的金屬氧化物為In^-M-Zn類氧化物時，較佳為用來形成In-M-Zn氧化物膜的濺射靶材的金屬元素的原子數比滿足InM及ZnM。這種濺射靶材的金屬元素的原子數比較佳為 In：M：Zn=1：1：1、In：M：Zn=1：1：1.2、In：M：Zn=3：1：2、In：M：Zn=4：2：3、In：M：Zn=4：2：4.1、In：M：Zn=5：1：6、In：M：Zn=5：1：7、In：M：Zn=5：1：8等。注意，所形成的半導體層的原子數比分別可以在上述濺射靶材中的金屬元素的原子數比的±40%的範圍內變動。 When the metal oxide constituting the semiconductor layer is an In ^- M-Zn-based oxide, it is preferred that the atomic ratio of the metal element of the sputtering target for forming the In-M-Zn oxide film satisfies In M and Zn M. The atomic number of the metal element of the sputtering target is preferably In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2 , In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In :M:Zn=5:1:8 and so on. Note that the atomic ratio of the formed semiconductor layer may vary within a range of ±40% of the atomic ratio of the metal elements in the sputtering target.

本實施方式所示的底閘極結構的電晶體由於能夠減少製程，所以是較佳的。另外，此時藉由使用金屬氧化物，可以在比多晶矽低的溫度下形成金屬氧化物，並且作為半導體層下方的佈線或電極的材料及基板材料可以使用耐熱性低的材料，由此可以擴大材料的選擇範圍。例如，可以適當地使用極大面積的玻璃基板等。 The transistor of the bottom gate structure shown in this embodiment is preferable because it can reduce the number of processes. Further, at this time, by using a metal oxide, a metal oxide can be formed at a temperature lower than that of the polycrystalline silicon, and a material having low heat resistance can be used as a material of the wiring or the electrode under the semiconductor layer and the substrate material, thereby being able to be expanded The range of materials to choose from. For example, a glass substrate or the like having a very large area can be suitably used.

作為半導體層，可以使用載子密度低的金屬氧化物膜。例如，作為半導體層可以使用載子密度為1×10¹⁷/cm³以下，較佳為1×10¹⁵/cm³以下，更佳為1×10¹³/cm³以下，進一步較佳為1×10¹¹/cm³以下，更進一步較佳為小於1×10¹⁰/cm³，1×10^-9/cm³以上的金屬氧化物。將這樣的金屬氧化物稱為高純度本質或實質上高純度本質的金屬氧化物。由此，因為雜質濃度及缺陷能階密度低，可以說是具有穩定的特性的金屬氧化物。 As the semiconductor layer, a metal oxide film having a low carrier density can be used. For example, as the semiconductor layer, a carrier density of 1 × 10 ¹⁷ /cm ³ or less, preferably 1 × 10 ¹⁵ /cm ³ or less, more preferably 1 × 10 ¹³ /cm ³ or less, further preferably 1 × can be used. Further, 10 ¹¹ /cm ³ or less is more preferably a metal oxide of less than 1 × 10 ¹⁰ /cm ³ and 1 × 10 ^-9 /cm ³ or more. Such metal oxides are referred to as metal oxides of high purity nature or substantially high purity nature. Thus, since the impurity concentration and the defect energy level density are low, it can be said that it is a metal oxide having stable characteristics.

注意，本發明不侷限於上述記載，可以根據所需的電晶體的半導體特性及電特性(場效移動率、臨界電壓等)來使用具有適當的組成的材料。另外，較佳為適當地設定半導體層的載子密度、雜質濃度、缺陷密度、金屬元素與氧的原子數比、原子間距離、密度等，以得到所需的電晶體的半導體特性。 Note that the present invention is not limited to the above description, and a material having an appropriate composition can be used depending on semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, and the like) of a desired transistor. Further, it is preferable to appropriately set the carrier density, the impurity concentration, the defect density, the atomic ratio of the metal element to oxygen, the interatomic distance, the density, and the like of the semiconductor layer to obtain the desired semiconductor characteristics of the transistor.

當構成半導體層的金屬氧化物包含第14族元素之一的矽或碳時，半導體層中的氧缺陷增加，會使該半導體層變為h型。因此，將半導體層中的矽或碳的濃度(藉由二次離子質譜分析法測得的濃度)設定為2×10¹⁸atoms/cm³以下，較佳為2×10¹⁷atoms/cm³以下。 When the metal oxide constituting the semiconductor layer contains ruthenium or carbon of one of the Group 14 elements, an increase in oxygen defects in the semiconductor layer causes the semiconductor layer to become h-type. Therefore, the concentration of ruthenium or carbon (concentration measured by secondary ion mass spectrometry) in the semiconductor layer is set to 2 × 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁷ atoms / cm ³ or less. .

另外，有時當鹼金屬及鹼土金屬與金屬氧化物鍵合時生成載子，而使電晶體的關態電流增大。因此，將藉由二次離子質譜分析法測得的半導體層的鹼金屬或鹼土金屬的濃度設定為1×10¹⁸atoms/cm³以下，較佳為2×10¹⁶atoms/cm³以下。 Further, when an alkali metal and an alkaline earth metal are bonded to a metal oxide, a carrier is sometimes generated to increase an off-state current of the transistor. Therefore, the concentration of the alkali metal or alkaline earth metal of the semiconductor layer measured by secondary ion mass spectrometry is set to 1 × 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁶ atoms / cm ³ or less.

另外，當構成半導體層的金屬氧化物含有氮時生成作為載子的電子，載子密度增加而容易n型化。其結果，使用具有含有氮的金屬氧化物的電晶體容易變為常開特性。因此，利用二次離子質譜分析法測得的半導體層的氮濃度較佳為5×10¹⁸atoms/cm³以下。 Further, when the metal oxide constituting the semiconductor layer contains nitrogen, electrons as carriers are generated, and the carrier density is increased to facilitate n-type formation. As a result, a transistor having a metal oxide containing nitrogen tends to have a normally-on property. Therefore, the nitrogen concentration of the semiconductor layer measured by secondary ion mass spectrometry is preferably 5 × 10 ¹⁸ atoms / cm ³ or less.

另外，半導體層例如也可以具有非單晶結構。非單晶結構例如包括具有配向為c軸的結晶的CAAC-OS(C-Axis Aligned Crystalline Oxide Semiconductor或者C-Axis Aligned and A-B-plane Anchored Crystalline Oxide Semiconductor)、多晶結構、微晶結構或非晶結構。在非單晶結構中，非晶結構的缺陷態密度最高，而CAAC-OS的缺陷態密度最低。 Further, the semiconductor layer may have a non-single crystal structure, for example. The non-single-crystal structure includes, for example, CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor or C-Axis Aligned and AB-plane Anchored Crystalline Oxide Semiconductor) having a crystal orientation of the c-axis, polycrystalline structure, microcrystalline structure or amorphous structure. In the non-single crystal structure, the amorphous structure has the highest defect state density, while the CAAC-OS has the lowest defect state density.

非晶結構的金屬氧化物膜例如具有無秩序的原子排列且不具有結晶成分。或者，非晶結構的氧化物膜例如是完全的非晶結構且不具有結晶部。 The metal oxide film of an amorphous structure has, for example, an disordered atomic arrangement and does not have a crystalline component. Alternatively, the oxide film of the amorphous structure is, for example, a completely amorphous structure and does not have a crystal portion.

此外，半導體層也可以為具有非晶結構的區域、微晶結構的區域、多晶結構的區域、CAAC-OS的區域和單晶結構的區域中的兩種以上的混合膜。混合膜有時例如具有包括上述區域中的兩種以上的區域的單層結構或疊層結構。 Further, the semiconductor layer may be a mixed film of a region having an amorphous structure, a region of a microcrystalline structure, a region of a polycrystalline structure, a region of a CAAC-OS, and a region of a single crystal structure. The mixed film sometimes has, for example, a single layer structure or a laminated structure including two or more regions in the above regions.

〈CAC-OS的構成〉 <Composition of CAC-OS>

以下，對可用於在本發明的一個實施方式中公開的電晶體的CAC (Cloud Aligned Composite)-OS的構成進行說明。 Hereinafter, the configuration of a CAC (Cloud Aligned Composite)-OS that can be used for the transistor disclosed in one embodiment of the present invention will be described.

在本說明書等中，金屬氧化物(metal oxide)是指廣義上的金屬的氧化物。金屬氧化物被分類為氧化物絕緣體、氧化物導電體(包括透明氧化物導電體)和氧化物半導體(Oxide Semiconductor，也可以簡稱為OS)等。例如，在將金屬氧化物用於電晶體的活性層的情況下，有時將該金屬氧化物稱為氧化物半導體。換言之，可以將OS FET稱為包含金屬氧化物或氧化物半導體的電晶體。 In the present specification and the like, a metal oxide refers to an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), and oxide semiconductors (Oxide Semiconductor, also abbreviated as OS). For example, when a metal oxide is used for an active layer of a transistor, the metal oxide is sometimes referred to as an oxide semiconductor. In other words, the OS FET can be referred to as a transistor including a metal oxide or an oxide semiconductor.

在本說明書中，將如下金屬氧化物定義為CAC(Cloud Aligned Composite)-OS(Oxide Semiconductor)或CAC-metal oxide：金屬氧化物中具有導電體的功能的區域和具有電介質的功能的區域混合而使金屬氧化物在整體上具有半導體的功能。 In the present specification, the following metal oxide is defined as CAC (Cloud Aligned Composite)-OS (Oxide Semiconductor) or CAC-metal oxide: a region of a metal oxide having a function of a conductor and a region having a function of a dielectric are mixed The metal oxide has a semiconductor function as a whole.

換言之，CAC-OS例如是指包含在氧化物半導體中的元素不均勻地分佈的構成，其中包含不均勻地分佈的元素的材料的尺寸為0.5nm以上且10nm以下，較佳為0.5nm以上且3nm以下或近似的尺寸。注意，在下面也將在氧化物半導體中一個或多個元素不均勻地分佈且包含該元素的區域混合的狀態稱為馬賽克(mosaic)狀或補丁(patch)狀，該區域的尺寸為0.5nm以上且10nm以下，較佳為0.5nm以上且3nm以下或近似的尺寸。 In other words, CAC-OS is, for example, a configuration in which elements contained in an oxide semiconductor are unevenly distributed, and a material including an element which is unevenly distributed has a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more. Below 3 nm or approximate size. Note that a state in which one or more elements in the oxide semiconductor are unevenly distributed and a region including the element is mixed is also referred to as a mosaic or patch shape, and the size of the region is 0.5 nm. The above and 10 nm or less are preferably 0.5 nm or more and 3 nm or less or approximately the same size.

包含不均勻地分佈的特定的元素的區域其物理特性由該元素所具有的性質決定。例如，包含不均勻地分佈的包含在金屬氧化物中的元素中更趨於成為絕緣體的元素的區域成為電介質區域。另一方面，包含不均勻地分佈的包含在金屬氧化物中的元素中更趨於成為導體的元素的區域成為導電體區域。藉由使導電體區域及電介質區域以馬賽克狀混合，該材料具有半導體的功能。 The physical characteristics of a region containing a specific element that is unevenly distributed are determined by the properties possessed by the element. For example, a region including an element which is unevenly distributed and contains an element which is more likely to be an insulator among the elements in the metal oxide becomes a dielectric region. On the other hand, a region including an element which is unevenly distributed and contained in the metal oxide and which tends to become an element of the conductor becomes a conductor region. The material has a semiconductor function by mixing the conductor region and the dielectric region in a mosaic form.

換言之，本發明的一個實施方式的金屬氧化物是物理特性不同的材料混合的基質複合材料(matrix composite)或金屬基質複合材料(metal matrix composite)的一種。 In other words, the metal oxide of one embodiment of the present invention is one of a matrix composite or a metal matrix composite in which materials having different physical properties are mixed.

氧化物半導體較佳為至少包含銦。尤其較佳為包含銦及鋅。除此之外，也可以還包含元素M(M選自鎵、鋁、矽、硼、釔、銅、釩、鈹、鈦、鐵、鎳、鍺、鋯、鉬、鑭、鈰、釹、鉿、鉭、鎢和鎂等中的一種或多種)。 The oxide semiconductor preferably contains at least indium. It is especially preferred to include indium and zinc. In addition, it may further comprise an element M (M is selected from the group consisting of gallium, aluminum, lanthanum, boron, lanthanum, copper, vanadium, niobium, titanium, iron, nickel, cerium, zirconium, molybdenum, niobium, tantalum, niobium, tantalum, niobium One or more of bismuth, antimony, tungsten and magnesium).

例如，In-Ga-Zn氧化物中的CAC-OS(在CAC-OS中，尤其可以將In-Ga-Zn氧化物稱為CAC-IGZO)是指材料分成銦氧化物(以下，稱為InO_X1(X1為大於0的實數))或銦鋅氧化物(以下，稱為In_X2Zn_Y2O_Z2(X2、Y2及Z2為大於0的實數))以及鎵氧化物(以下，稱為GaO_X3(X3為大於0的實數))或鎵鋅氧化物(以下，稱為Ga_X4Zn_Y4O_Z4(X4、Y4及Z4為大於0的實數))等而成為馬賽克狀，且馬賽克狀的InO_X1或In_X2Zn_Y2O_Z2均勻地分佈在膜中的構成(以下，也稱為雲狀)。 For example, CAC-OS in In-Ga-Zn oxide (in the case of CAC-OS, in particular, In-Ga-Zn oxide is referred to as CAC-IGZO) means that the material is divided into indium oxide (hereinafter, referred to as InO) _X1 (X1 is a real number greater than 0) or indium zinc oxide (hereinafter, referred to as In _X2 Zn _Y2 O _Z2 (X2, Y2 and Z2 are real numbers greater than 0)) and gallium oxide (hereinafter, referred to as GaO _X3) (X3 is a real number greater than 0) or gallium zinc oxide (hereinafter, referred to as Ga _X4 Zn _Y4 O _Z4 (X4, Y4, and Z4 are real numbers greater than 0)), and is mosaic-like, and mosaic-like InO _X1 Or a composition in which In _X2 Zn _Y2 O _{Z2 is} uniformly distributed in the film (hereinafter, also referred to as a cloud shape).

換言之，CAC-OS是具有以GaO_X3為主要成分的區域和以In_X2Zn_Y2O_Z2或InO_X1為主要成分的區域混在一起的構成的複合氧化物半導體。在本說明書中，例如，當第一區域的In對元素M的原子數比大於第二區域的In對元素M的原子數比時，第一區域的In濃度高於第二區域。 In other words, CAC-OS is a composite oxide semiconductor having a structure in which a region containing GaO _X3 as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component are mixed. In the present specification, for example, when the atomic ratio of the In to element M of the first region is larger than the atomic ratio of the In to the element M of the second region, the In concentration of the first region is higher than that of the second region.

注意，IGZO是通稱，有時是指包含In、Ga、Zn及0的化合物。作為典型例子，可以舉出以InGaO₃(ZnO)_m1(m1為自然數)或In_(1+x0)Ga_(1-x0)O₃(ZnO)_m0(-1x01，m0為任意數)表示的結晶性化合物。 Note that IGZO is a generic term and sometimes refers to a compound containing In, Ga, Zn, and 0. As a typical example, InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _(1+x0) Ga _(1-x0) O ₃ (ZnO) _m0 (-1) X0 1, m0 is an arbitrary number of crystalline compounds.

上述結晶性化合物具有單晶結構、多晶結構或CAAC結構。CAAC結構是多個IGZO的奈米晶具有c軸配向性且在a-b面上以不配向的方式連接的結晶結構。 The above crystalline compound has a single crystal structure, a polycrystalline structure or a CAAC structure. The CAAC structure is a crystal structure in which a plurality of nanocrystals of IGZO have c-axis alignment and are connected in an unaligned manner on the a-b plane.

另一方面，CAC-OS與氧化物半導體的材料構成有關。CAC-OS是指如下構成：在包含In、Ga、Zn及O的材料構成中，一部分中觀察到以Ga為主要成分的奈米粒子狀區域，一部分中觀察到以In為主要成分的奈米粒子狀區域，並且，這些區域以馬賽克狀無規律地分散。因此，在CAC-OS中，結晶結構是次要因素。 On the other hand, CAC-OS is related to the material composition of an oxide semiconductor. CAC-OS is a structure in which a nanoparticle-like region containing Ga as a main component is observed in a part of a material composition containing In, Ga, Zn, and O, and a portion containing In as a main component is observed in a part. Particle-like regions, and these regions are irregularly dispersed in a mosaic shape. Therefore, in CAC-OS, the crystal structure is a secondary factor.

CAC-OS不包含組成不同的兩種以上的膜的疊層結構。例如，不包含由以In為主要成分的膜與以Ga為主要成分的膜的兩層構成的結構。 The CAC-OS does not include a laminated structure of two or more different compositions. For example, a structure composed of two layers of a film containing In as a main component and a film containing Ga as a main component is not included.

注意，有時觀察不到以GaO_X3為主要成分的區域與以In_X2Zn_Y2O_Z2或InO_X1為主要成分的區域之間的明確的邊界。 Note that a clear boundary between a region containing GaO _X3 as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component may not be observed.

在CAC-OS中包含選自鋁、矽、硼、釔、銅、釩、鈹、鈦、鐵、鎳、鍺、鋯、鉬、鑭、鈰、釹、鉿、鉭、鎢和鎂等中的一種或多種以代替鎵的情況下，CAC-OS是指如下構成：一部分中觀察到以該元素為主要成分的奈米粒子狀區域，一部分中觀察到以In為主要成分的奈米粒子狀區域，並且，這些區域以馬賽克狀無規律地分散。 Included in CAC-OS is selected from the group consisting of aluminum, lanthanum, boron, lanthanum, copper, vanadium, niobium, titanium, iron, nickel, cerium, zirconium, molybdenum, niobium, tantalum, niobium, tantalum, niobium, tungsten and magnesium. In the case of replacing one or more of gallium, CAC-OS is a structure in which a nanoparticle-like region containing the element as a main component is observed in a part, and a nanoparticle-like region containing In as a main component is observed in a part thereof. And, these areas are scattered irregularly in a mosaic shape.

〈CAC-OS的分析〉 <Analysis of CAC-OS>

接著，說明使用各種測定方法對在基板上形成的氧化物半導體進行測定的結果。 Next, the results of measurement of the oxide semiconductor formed on the substrate using various measurement methods will be described.

《樣本的結構及製造方法》 "Structure and Manufacturing Methods of Samples"

以下，對本發明的一個實施方式的九個樣本進行說明。各樣本在形成氧化物半導體時的基板溫度及氧氣體流量比上不同。各樣本包括基板及基板上的氧化物半導體。 Hereinafter, nine samples of one embodiment of the present invention will be described. Each sample differs in substrate temperature and oxygen gas flow ratio when forming an oxide semiconductor. Each sample includes a substrate and an oxide semiconductor on the substrate.

對各樣本的製造方法進行說明。 A method of manufacturing each sample will be described.

作為基板使用玻璃基板。使用濺射裝置在玻璃基板上作為氧化物半導體形成厚度為100nm的In-Ga-Zn氧化物。成膜條件為如下：將腔室內的壓力設定為0.6Pa，作為靶材使用氧化物靶材(In：Ga：Zn=4：2：4.1[原子數比])。另外，對設置在濺射裝置內的氧化物靶材供應2500W的AC功率。 A glass substrate is used as the substrate. An In-Ga-Zn oxide having a thickness of 100 nm was formed as an oxide semiconductor on a glass substrate using a sputtering apparatus. The film formation conditions were as follows: the pressure in the chamber was set to 0.6 Pa, and an oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]) was used as a target. In addition, an AC power of 2500 W was supplied to the oxide target provided in the sputtering apparatus.

在形成氧化物時採用如下條件來製造九個樣本：將基板溫度設定為不進行意圖性的加熱時的溫度(以下，也稱為室溫或R.T.)、130℃或170℃。另外，將氧氣體對Ar和氧的混合氣體的流量比(以下，也稱為氧氣體流量比)設定為10%、30%或100%。 In the formation of an oxide, nine samples were produced under the following conditions: the substrate temperature was set to a temperature at which the intended heating was not performed (hereinafter, also referred to as room temperature or R.T.), 130 ° C or 170 ° C. Further, the flow ratio of the oxygen gas to the mixed gas of Ar and oxygen (hereinafter also referred to as the oxygen gas flow ratio) is set to 10%, 30% or 100%.

《X射線繞射分析》 X-ray diffraction analysis

在本節中，說明對九個樣本進行X射線繞射(XRD：X-ray diffraction)測定的結果。作為XRD裝置，使用Bruker公司製造的D8 ADVANCE。條件為如下：利用Out-of-plane法進行θ/2θ掃描，掃描範圍為15deg.至50deg.，步進寬度為0.02deg.，掃描速度為3.0deg./分。 In this section, the results of X-ray diffraction (XRD) measurement of nine samples are described. As the XRD apparatus, D8 ADVANCE manufactured by Bruker Corporation was used. The conditions were as follows: θ/2θ scanning was performed by the Out-of-plane method, the scanning range was 15 deg. to 50 deg., the step width was 0.02 deg., and the scanning speed was 3.0 deg. / min.

圖21示出利用Out-of-plane法測定XRD譜的結果。在圖21中，最上行示出成膜時的基板溫度為170℃的樣本的測定結果，中間行示出成膜時的基板溫度為130℃的樣本的測定結果，最下行示出成膜時的基板溫度為R.T.的樣本的測定結果。另外，最左列示出氧氣體流量比為10%的樣本的測定結果，中間列示出氧氣體流量比為30%的樣本的測定結果，最右列示出氧氣體流量比為100%的樣本的測定結果。 Fig. 21 shows the results of measuring the XRD spectrum by the Out-of-plane method. In Fig. 21, the measurement results of the sample having a substrate temperature of 170 ° C at the time of film formation are shown in the uppermost row, and the measurement results of the sample having a substrate temperature of 130 ° C at the time of film formation are shown in the middle row, and the film formation is shown in the lowermost row. The substrate temperature is the measurement result of the sample of RT. Further, the leftmost column shows the measurement results of the sample having an oxygen gas flow rate ratio of 10%, the middle column shows the measurement results of the sample having the oxygen gas flow rate ratio of 30%, and the rightmost column shows that the oxygen gas flow ratio is 100%. The measurement result of the sample.

圖21所示的XRD譜示出成膜時的基板溫度越高或成膜時的氧氣體流量比越高，2θ=31°附近的峰值強度則越高。另外，已知2θ=31°附近 的峰值來源於在大致垂直於被形成面或頂面的方向上具有c軸配向性的結晶性IGZO化合物(也稱為CAAC(c-axis aligned crystalline)-IGZO)。 The XRD spectrum shown in Fig. 21 shows that the higher the substrate temperature at the time of film formation or the higher the oxygen gas flow rate ratio at the time of film formation, the higher the peak intensity in the vicinity of 2θ = 31°. Further, it is known that a peak near 2θ=31° is derived from a crystalline IGZO compound having a c-axis alignment in a direction substantially perpendicular to a surface to be formed or a top surface (also referred to as CAAC (c-axis aligned crystalline)-IGZO ).

另外，如圖21的XRD譜所示，成膜時的基板溫度越低或氧氣體流量比越低，峰值則越不明顯。因此，可知在成膜時的基板溫度低或氧氣體流量比低的樣本中，觀察不到測定區域的a-b面方向及c軸方向的配向。 Further, as shown by the XRD spectrum of FIG. 21, the lower the substrate temperature at the time of film formation or the lower the oxygen gas flow rate ratio, the less the peak value is. Therefore, it was found that in the samples in which the substrate temperature at the time of film formation was low or the oxygen gas flow rate ratio was low, the alignment of the measurement region in the a-b plane direction and the c-axis direction was not observed.

《電子顯微鏡分析》 Electron Microscopy Analysis

在本節中，說明對在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本利用HAADF-STEM(High-Angle Annular Dark Field Scanning Transmission Electron Microscope：高角度環形暗場-掃描穿透式電子顯微鏡)進行觀察及分析的結果(以下，也將利用HAADF-STEM取得的影像稱為TEM影像)。 In this section, the HAADF-STEM (High-Angle Annular Dark Field Scanning Transmission Electron Microscope) is used for the sample manufactured under the condition that the substrate temperature at the time of film formation is RT and the oxygen gas flow ratio is 10%. - Scanning electron microscope) The results of observation and analysis (hereinafter, images obtained by HAADF-STEM are also referred to as TEM images).

說明對利用HAADF-STEM取得的平面影像(以下，也稱為平面TEM影像)及剖面影像(以下，也稱為剖面TEM影像)進行影像分析的結果。利用球面像差校正功能觀察TEM影像。在取得HAADF-STEM影像時，使用日本電子株式會社製造的原子解析度分析電子顯微鏡JEM-ARM200F，將加速電壓設定為200kV，照射束徑大致為0.1nmΦ的電子束。 The results of image analysis on a planar image (hereinafter also referred to as a planar TEM image) and a cross-sectional image (hereinafter, also referred to as a cross-sectional TEM image) obtained by HAADF-STEM will be described. The TEM image is observed using the spherical aberration correction function. In the case of obtaining the HAADF-STEM image, an electron beam JEM-ARM200F manufactured by JEOL Ltd. was used, and an acceleration voltage was set to 200 kV, and an electron beam having a beam diameter of approximately 0.1 nm Φ was irradiated.

圖22A為在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本的平面TEM影像。圖22B為在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本的剖面TEM影像。 Fig. 22A is a plan TEM image of a sample produced under the conditions that the substrate temperature at the time of film formation is R.T. and the oxygen gas flow rate ratio is 10%. 22B is a cross-sectional TEM image of a sample produced under the conditions that the substrate temperature at the time of film formation is R.T. and the oxygen gas flow rate ratio is 10%.

《電子繞射圖案的分析》 "Analysis of Electronic Diffraction Patterns"

在本節中，說明藉由對在成膜時的基板溫度為R.T.且氧氣體流量 比為10%的條件下製造的樣本照射束徑為1nm的電子束(也稱為奈米束)，來取得電子繞射圖案的結果。 In this section, an electron beam (also referred to as a nanobeam) having a beam diameter of 1 nm is irradiated to a sample produced under the condition that the substrate temperature at the time of film formation is RT and the oxygen gas flow rate ratio is 10%. The result of the electronic diffraction pattern.

觀察圖22A所示的在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本的平面TEM影像中的黑點a1、黑點a2、黑點a3、黑點a4及黑點a5的電子繞射圖案。電子繞射圖案的觀察以固定速度照射電子束35秒鐘的方式進行。圖22C示出黑點a1的結果，圖22D示出黑點a2的結果，圖22E示出黑點a3的結果，圖22F示出黑點a4的結果，圖22G示出黑點a5的結果。 The black dot a1, the black dot a2, the black dot a3, and the black dot a4 in the planar TEM image of the sample prepared under the condition that the substrate temperature at the time of film formation is RT and the oxygen gas flow ratio is 10% shown in FIG. 22A is observed. And an electronic diffraction pattern of black dots a5. The observation of the electronic diffraction pattern was performed by irradiating the electron beam at a fixed speed for 35 seconds. 22C shows the result of the black dot a1, FIG. 22D shows the result of the black dot a2, FIG. 22E shows the result of the black dot a3, FIG. 22F shows the result of the black dot a4, and FIG. 22G shows the result of the black dot a5.

在圖22C、圖22D、圖22E、圖22F及圖22G中，觀察到如圓圈那樣的(環狀的)亮度高的區域。另外，在環狀區域內觀察到多個斑點。 In FIGS. 22C, 22D, 22E, 22F, and 22G, a region having a high (bright) brightness such as a circle is observed. In addition, a plurality of spots were observed in the annular region.

觀察圖22B所示的在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本的剖面TEM影像中的黑點b1、黑點b2、黑點b3、黑點b4及黑點b5的電子繞射圖案。圖22H示出黑點b1的結果，圖22I示出黑點b2的結果，圖22J示出黑點b3的結果，圖22K示出黑點b4的結果，圖22L示出黑點b5的結果。 The black spot b1, the black dot b2, the black dot b3, and the black dot b4 in the cross-sectional TEM image of the sample prepared under the condition that the substrate temperature at the time of film formation is RT and the oxygen gas flow ratio is 10% as shown in FIG. 22B is observed. And the electronic diffraction pattern of the black point b5. 22H shows the result of the black dot b1, FIG. 22I shows the result of the black dot b2, FIG. 22J shows the result of the black dot b3, FIG. 22K shows the result of the black dot b4, and FIG. 22L shows the result of the black dot b5.

在圖22H、圖22I、圖22J、圖22K及圖22L中，觀察到環狀的亮度高的區域。另外，在環狀區域內觀察到多個斑點。 In FIGS. 22H, 22I, 22J, 22K, and 22L, a region in which the ring-shaped luminance is high is observed. In addition, a plurality of spots were observed in the annular region.

例如，當對包含InGaZnO₄結晶的CAAC-OS在平行於樣本面的方向上入射束徑為300nm的電子束時，獲得了包含起因於InGaZnO₄結晶的(009)面的斑點的繞射圖案。換言之，CAAC-OS具有c軸配向性，並且c軸朝向大致垂直於被形成面或頂面的方向。另一方面，當對相同的樣本在垂直於樣本面的方向上入射束徑為300nm的電子束時，確認到環狀繞射圖案。換言之，CAAC-OS不具有a軸配向性及b軸配向性。 For example, when an electron beam having a beam diameter of 300 nm is incident on a CAAC-OS containing InGaZnO ₄ crystal in a direction parallel to the sample surface, a diffraction pattern containing spots derived from the (009) plane of the InGaZnO ₄ crystal is obtained. In other words, the CAAC-OS has a c-axis orientation, and the c-axis faces a direction substantially perpendicular to the surface to be formed or the top surface. On the other hand, when an electron beam having a beam diameter of 300 nm was incident on the same sample in a direction perpendicular to the sample surface, an annular diffraction pattern was confirmed. In other words, CAAC-OS does not have a-axis alignment and b-axis alignment.

當使用大束徑(例如，50nm以上)的電子束對具有微晶的氧化物半導體(nano crystalline oxide semiconductor。以下稱為nc-OS)進行電子繞射時，觀察到類似光暈圖案的繞射圖案。另外，當使用小束徑(例如，小於50nm)的電子束對nc-OS進行奈米束電子繞射時，觀察到亮點(斑點)。另外，在nc-OS的奈米束電子繞射圖案中，有時觀察到如圓圈那樣的(環狀的)亮度高的區域。而且，有時在環狀區域內觀察到多個亮點。 When an electron beam having a large beam diameter (for example, 50 nm or more) is used for electron diffraction of a nanocrystalline oxide semiconductor (hereinafter referred to as nc-OS), a diffraction pattern similar to a halo pattern is observed. . In addition, when an electron beam of a small beam diameter (for example, less than 50 nm) is used to perform nanobeam electron diffraction on the nc-OS, a bright spot (spot) is observed. Further, in the nanobeam electron diffraction pattern of the nc-OS, a region having a high (bright) brightness such as a circle may be observed. Moreover, a plurality of bright spots are sometimes observed in the annular region.

在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本的電子繞射圖案具有環狀的亮度高的區域且在該環狀區域內出現多個亮點。因此，在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本呈現與nc-OS類似的電子繞射圖案，在平面方向及剖面方向上不具有配向性。 The electron diffraction pattern of the sample produced under the condition that the substrate temperature at the time of film formation was R.T. and the oxygen gas flow rate ratio was 10% had a region having a high ring-shaped luminance and a plurality of bright spots appeared in the annular region. Therefore, the sample produced under the condition that the substrate temperature at the time of film formation was R.T. and the oxygen gas flow rate ratio was 10% exhibited an electron diffraction pattern similar to that of nc-OS, and had no alignment in the planar direction and the cross-sectional direction.

如上所述，成膜時的基板溫度低或氧氣體流量比低的氧化物半導體的性質與非晶結構的氧化物半導體膜及單晶結構的氧化物半導體膜都明顯不同。 As described above, the properties of the oxide semiconductor having a low substrate temperature or a low oxygen gas flow rate at the time of film formation are significantly different from those of the oxide semiconductor film of the amorphous structure and the oxide semiconductor film of the single crystal structure.

《元素分析》 "Elemental analysis"

在本節中，說明使用能量色散型X射線分析法(EDX：Energy Dispersive X-ray spectroscopy)取得EDX面分析影像且進行評價，由此進行在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本的元素分析的結果。在EDX測定中，作為元素分析裝置使用日本電子株式會社製造的能量色散型X射線分析裝置JED-2300T。在檢測從樣本發射的X射線時，使用矽漂移探測器。 In this section, an EDX surface analysis image is obtained by EDS (Energy Dispersive X-ray spectroscopy) and evaluated, whereby the substrate temperature at the time of film formation is RT and the oxygen gas flow ratio is The results of elemental analysis of samples made under 10% conditions. In the EDX measurement, an energy dispersive X-ray analyzer JED-2300T manufactured by JEOL Ltd. was used as the elemental analysis device. A chirped drift detector is used when detecting X-rays emitted from the sample.

在EDX測定中，對樣本的分析目標區域的各點照射電子束，並測定此時發生的樣本的特性X射線的能量及發生次數，獲得對應於各點的EDX譜。在本實施方式中，各點的EDX譜的峰值歸屬於In原子中的 向L殼層的電子躍遷、Ga原子中的向K殼層的電子躍遷、Zn原子中的向K殼層的電子躍遷及O原子中的向K殼層的電子躍遷，並算出各點的各原子的比率。藉由在樣本的分析目標區域中進行上述步驟，可以獲得示出各原子的比率分佈的EDX面分析影像。 In the EDX measurement, an electron beam is irradiated to each point of the analysis target region of the sample, and the energy and the number of occurrences of the characteristic X-ray of the sample occurring at this time are measured, and an EDX spectrum corresponding to each point is obtained. In the present embodiment, the peak of the EDX spectrum at each point is attributed to the electron transition to the L shell in the In atom, the electron transition to the K shell in the Ga atom, and the electronic transition to the K shell in the Zn atom. And the electron transition to the K shell in the O atom, and the ratio of each atom at each point is calculated. By performing the above steps in the analysis target region of the sample, an EDX surface analysis image showing the ratio distribution of each atom can be obtained.

圖23A至圖23C示出在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本的剖面的EDX面分析影像。圖23A示出Ga原子的EDX面分析影像(在所有的原子中Ga原子所佔的比率為1.18至18.64[atomic%])。圖23B示出In原子的EDX面分析影像(在所有的原子中In原子所佔的比率為9.28至33.74[atomic%])。圖23C示出Zn原子的EDX面分析影像(在所有的原子中Zn原子所佔的比率為6.69至24.99[atomic%])。另外，圖23A、圖23B及圖23C示出在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本的剖面中的相同區域。在EDX面分析影像中，由明暗表示元素的比率：該區域內的測定元素越多該區域越亮，測定元素越少該區域就越暗。圖23A至圖23C所示的EDX面分析影像的倍率為720萬倍。 23A to 23C show an EDX surface analysis image of a cross section of a sample produced under the condition that the substrate temperature at the time of film formation is R.T. and the oxygen gas flow rate ratio is 10%. Fig. 23A shows an EDX surface analysis image of Ga atoms (the ratio of Ga atoms in all atoms is 1.18 to 18.64 [atomic%]). Fig. 23B shows an EDX surface analysis image of In atoms (the ratio of In atoms in all atoms is 9.28 to 33.74 [atomic%]). Fig. 23C shows an EDX surface analysis image of Zn atoms (the ratio of Zn atoms in all atoms is 6.69 to 24.99 [atomic%]). 23A, 23B, and 23C show the same region in the cross section of the sample produced under the condition that the substrate temperature at the time of film formation is R.T. and the oxygen gas flow rate ratio is 10%. In the EDX surface analysis image, the ratio of elements is indicated by light and dark: the more the measurement elements in the area, the brighter the area, and the less the measurement element, the darker the area. The magnification of the EDX surface analysis image shown in FIGS. 23A to 23C is 7.2 million times.

在圖23A、圖23B及圖23C所示的EDX面分析影像中，確認到明暗的相對分佈，在成膜時的基板溫度為R.T.且氧氣體流量比為10%的條件下製造的樣本中確認到各原子具有分佈。在此，著眼於圖23A、圖23B及圖23C所示的由實線圍繞的區域及由虛線圍繞的區域。 In the EDX surface analysis images shown in FIG. 23A, FIG. 23B, and FIG. 23C, the relative distribution of light and dark was confirmed, and it was confirmed in the sample manufactured under the condition that the substrate temperature at the time of film formation was RT and the oxygen gas flow rate ratio was 10%. There is a distribution to each atom. Here, attention is paid to the area surrounded by the solid line and the area surrounded by the broken line shown in FIGS. 23A, 23B, and 23C.

在圖23A中，在由實線圍繞的區域內相對較暗的區域較多，在由虛線圍繞的區域內相對較亮的區域較多。另外，在圖23B中，在由實線圍繞的區域內相對較亮的區域較多，在由虛線圍繞的區域內相對較暗的區域較多。 In Fig. 23A, relatively dark areas are more in the area surrounded by the solid lines, and relatively bright areas are more in the area surrounded by the broken lines. In addition, in FIG. 23B, a relatively bright region is more in a region surrounded by a solid line, and a relatively dark region is more in a region surrounded by a broken line.

換言之，由實線圍繞的區域為In原子相對較多的區域，由虛線圍繞的區域為In原子相對較少的區域。在圖23C中，在由實線圍繞的區 域內，右側是相對較亮的區域，左側是相對較暗的區域。因此，由實線圍繞的區域為以In_X2Zn_Y2O_Z2或InO_X1等為主要成分的區域。 In other words, the area surrounded by the solid line is a relatively large area of In atoms, and the area surrounded by the dotted line is a relatively small area of In atoms. In Fig. 23C, in the area surrounded by the solid line, the right side is a relatively bright area, and the left side is a relatively dark area. Therefore, the region surrounded by the solid line is a region mainly composed of In _X2 Zn _Y2 O _Z2 or InO _X1 or the like.

另外，由實線圍繞的區域為Ga原子相對較少的區域，由虛線圍繞的區域為Ga原子相對較多的區域。在圖23C中，在由虛線圍繞的區域內，左上方的區域為相對較亮的區域，右下方的區域為相對較暗的區域。因此，由虛線圍繞的區域為以GaO_X3或Ga_X4Zn_Y4O_Z4等為主要成分的區域。 In addition, a region surrounded by a solid line is a region in which Ga atoms are relatively small, and a region surrounded by a broken line is a region in which Ga atoms are relatively large. In FIG. 23C, in the area surrounded by the broken line, the upper left area is a relatively bright area, and the lower right area is a relatively dark area. Therefore, the region surrounded by the broken line is a region mainly composed of GaO _X3 or Ga _X4 Zn _Y4 O _Z4 or the like.

如圖23A、圖23B及圖23C所示，In原子的分佈與Ga原子的分佈相比更均勻，以InO_X1為主要成分的區域看起來像是藉由以In_X2Zn_Y2O_Z2為主要成分的區域互相連接的。如此，以In_X2Zn_Y2O₂₂或InO_X1為主要成分的區域以雲狀展開形成。 As shown in FIG. 23A, FIG. 23B, and FIG. 23C, the distribution of In atoms is more uniform than that of Ga atoms, and the region containing InO _X1 as a main component appears to be composed of In _X2 Zn _Y2 O _Z2 as a main component. The areas are interconnected. Thus, a region containing In _X2 Zn _Y2 O ₂₂ or InO _X1 as a main component is formed in a cloud shape.

如此，可以將具有以GaO_X3等為主要成分的區域及以In_X2Zn_Y2O_Z2或InO_X1為主要成分的區域不均勻地分佈而混合的構成的In-Ga-Zn氧化物稱為CAC-OS。 In this way, an In-Ga-Zn oxide having a composition mainly composed of GaO _X3 or the like and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component may be unevenly distributed and referred to as CAC- OS.

CAC-OS的結晶結構具有nc結構。在具有nc結構的CAC-OS的電子繞射圖案中，除了起因於包含單晶、多晶或CAAC結構的IGZO的亮點(斑點)以外，還出現多個亮點(斑點)。或者，該結晶結構定義為除了出現多個亮點(斑點)之外，還出現環狀的亮度高的區域。 The crystal structure of CAC-OS has an nc structure. In the electronic diffraction pattern of CAC-OS having the nc structure, in addition to the bright spots (spots) of IGZO containing a single crystal, polycrystalline or CAAC structure, a plurality of bright spots (spots) appear. Alternatively, the crystal structure is defined as a region in which a ring-shaped luminance is high in addition to a plurality of bright spots (spots).

另外，如圖23A、圖23B及圖23C所示，以GaO_X3等為主要成分的區域及以In_X2Zn_Y2O_Z2或InO_X1為主要成分的區域的尺寸為0.5nm以上且10nm以下或者1nm以上且3nm以下。在EDX面分析影像中，以各元素為主要成分的區域的直徑較佳為1nm以上且2nm以下。 In addition, as shown in FIG. 23A, FIG. 23B and FIG. 23C, the region containing GaO _X3 or the like as a main component and the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component have a size of 0.5 nm or more and 10 nm or less or 1 nm. Above and below 3 nm. In the EDX surface analysis image, the diameter of a region containing each element as a main component is preferably 1 nm or more and 2 nm or less.

如上所述，CAC-OS的結構與金屬元素均勻地分佈的IGZO化合物不 同，具有與IGZO化合物不同的性質。換言之，CAC-OS具有以GaO_X3等為主要成分的區域及以In_X2Zn_Y2O_Z2或InO_X1為主要成分的區域互相分離且以各元素為主要成分的區域為馬賽克狀的構成。 As described above, the structure of CAC-OS is different from the IGZO compound in which metal elements are uniformly distributed, and has properties different from those of IGZO compounds. In other words, CAC-OS has a structure in which a region containing GaO _X3 or the like as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component are separated from each other, and a region containing each element as a main component is a mosaic.

在此，以In_X2Zn_Y2O_Z2或InO_X1為主要成分的區域的導電性高於以GaO_X3等為主要成分的區域。換言之，當載子流過以In_X2Zn_Y2O_Z2或InO_X1為主要成分的區域時，呈現氧化物半導體的導電性。因此，當以In_X2Zn_Y2O_Z2或InO_X1為主要成分的區域在氧化物半導體中以雲狀分佈時，可以實現高場效移動率(μ)。 Here, the conductivity of a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is higher than a region containing GaO _X3 or the like as a main component. In other words, when the carrier flows through a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component, the conductivity of the oxide semiconductor is exhibited. Therefore, when a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is distributed in a cloud shape in an oxide semiconductor, a high field effect mobility (μ) can be achieved.

另一方面，以GaO_X3等為主要成分的區域的絕緣性高於以In_X2Zn_Y2O_Z2或InO_X1為主要成分的區域。換言之，當以GaO_X3等為主要成分的區域在氧化物半導體中分佈時，可以抑制洩漏電流而實現良好的切換工作。 On the other hand, the region containing GaO _X3 or the like as a main component has higher insulation than the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component. In other words, when a region containing GaO _X3 or the like as a main component is distributed in the oxide semiconductor, a leakage current can be suppressed to achieve a good switching operation.

因此，當將CAC-OS用於半導體元件時，起因於GaO_X3等的絕緣性及起因於In_X2Zn_Y2O_Z2或InO_X1的導電性的互補作用可以實現高通態電流(I_on)及高場效移動率(μ)。 Therefore, when CAC-OS is used for a semiconductor element, high on-state current (I _on ) and high can be achieved due to insulation of GaO _X3 or the like and complementation of conductivity due to In _X2 Zn _Y2 O _Z2 or InO _X1 . Field effect mobility (μ).

另外，使用CAC-OS的半導體元件具有高可靠性。因此，CAC-OS適於顯示器等各種半導體裝置。 In addition, semiconductor elements using CAC-OS have high reliability. Therefore, the CAC-OS is suitable for various semiconductor devices such as displays.

由於在半導體層中具有CAC-OS的電晶體中其場效移動率高並驅動能量高，所以藉由將該電晶體用於驅動電路，典型地是生成閘極信號的閘極線驅動電路，可以提供邊框寬度窄(也稱為窄邊框)的顯示裝置。另外，藉由將該電晶體用於供應來自顯示裝置所包括的信號線的信號的信號線驅動電路(尤其是，與信號線驅動電路所包括的移位暫存器的輸出端子連接的解多工器)，可以提供連接於顯示裝置的佈線數少的顯示裝置。 Since the field effect mobility is high and the driving energy is high in a transistor having a CAC-OS in a semiconductor layer, by using the transistor for a driving circuit, typically a gate line driving circuit that generates a gate signal, A display device having a narrow border width (also referred to as a narrow bezel) can be provided. In addition, a signal line driving circuit for supplying a signal from a signal line included in a display device by the transistor (in particular, a solution connected to an output terminal of a shift register included in the signal line driving circuit) The device can provide a display device with a small number of wires connected to the display device.

另外，半導體層具有CAC-OS的電晶體像使用低溫多矽的電晶體那樣不需要進行雷射晶化製程。由此，即使為使用大面積基板的顯示裝置，也可以減少製造成本。並且，在如超高清(也稱為“4K解析度”、“4K2K”或“4K”)、超高清(也稱為“8K解析度”、“8K4K”或“8K”)等具有高解析度的大型顯示裝置中，藉由將在半導體層具有CAC-OS的電晶體用於驅動電路及顯示部，可以在短時間內進行寫入並降低顯示不良，所以是較佳的。 In addition, the transistor having a semiconductor layer having a CAC-OS does not require a laser crystallization process like the use of a low-temperature multi-turn transistor. Thereby, even if it is a display device using a large-area substrate, the manufacturing cost can be reduced. Also, high resolution such as Ultra HD (also called "4K resolution", "4K2K" or "4K"), Ultra HD (also called "8K resolution", "8K4K" or "8K") In the large display device, it is preferable to use a transistor having a CAC-OS in a semiconductor layer for a driving circuit and a display portion, thereby enabling writing in a short time and reducing display defects.

另外，可以將矽用於電晶體的形成有通道的半導體。作為矽可以使用非晶矽，尤其較佳為使用具有結晶性的矽。例如，較佳為使用微晶矽、多晶矽、單晶矽等。尤其是，多晶矽與單晶矽相比能夠在低溫下形成，並且其場效移動率比非晶矽高，所以多晶矽的可靠性高。 In addition, germanium can be used for the channel-forming semiconductor of the transistor. As the germanium, an amorphous germanium can be used, and it is particularly preferable to use a germanium having crystallinity. For example, microcrystalline germanium, polycrystalline germanium, single crystal germanium or the like is preferably used. In particular, polycrystalline germanium can be formed at a low temperature as compared with single crystal germanium, and its field effect mobility is higher than that of amorphous germanium, so that the reliability of polycrystalline germanium is high.

本實施方式所示的底閘極結構的電晶體由於能夠減少製程，所以是較佳的。另外，此時藉由使用非晶矽，可以在比多晶矽低的溫度下形成氧化物半導體，並且作為半導體層下方的佈線或電極的材料及基板材料可以使用耐熱性低的材料，由此可以擴大材料的選擇範圍。例如，可以適當地使用極大面積的玻璃基板等。另一方面，頂閘極型電晶體容易自對準地形成雜質區域，從而可以減少特性的不均勻等，所以是較佳的。此時，尤其較佳為使用多晶矽或單晶矽等。 The transistor of the bottom gate structure shown in this embodiment is preferable because it can reduce the number of processes. Further, at this time, by using an amorphous germanium, an oxide semiconductor can be formed at a temperature lower than that of the polycrystalline germanium, and a material having low heat resistance can be used as a material of the wiring or the electrode under the semiconductor layer and the substrate material, thereby being able to expand The range of materials to choose from. For example, a glass substrate or the like having a very large area can be suitably used. On the other hand, the top gate type transistor is easy to form an impurity region in a self-aligned manner, so that unevenness in characteristics and the like can be reduced, which is preferable. At this time, it is particularly preferable to use polycrystalline germanium or single crystal germanium or the like.

[導電層] [conductive layer]

作為可用於電晶體的閘極、源極及汲極和構成顯示裝置的各種佈線及電極等導電層的材料，可以舉出鋁、鈦、鉻、鎳、銅、釔、鋯、鉬、銀、鉭或鎢等金屬或者以上述金屬為主要成分的合金等。另外，可以以單層或疊層結構使用包含這些材料的膜。例如，可以舉出包含矽的鋁膜的單層結構、在鈦膜上層疊鋁膜的兩層結構、在鎢膜上層疊鋁膜的兩層結構、在銅-鎂-鋁合金膜上層疊銅膜的兩層結構、在鈦膜上層疊銅膜的兩層結構、在鎢膜上層疊銅膜的兩層結構、依次層疊鈦 膜或氮化鈦膜、鋁膜或銅膜以及鈦膜或氮化鈦膜的三層結構、以及依次層疊鉬膜或氮化鉬膜、鋁膜或銅膜以及鉬膜或氮化鉬膜的三層結構等。另外，可以使用氧化銦、氧化錫或氧化鋅等氧化物。另外，藉由使用包含錳的銅，可以提高蝕刻時的形狀的控制性，所以是較佳的。 Examples of the material which can be used for the gate, the source, the drain of the transistor, and various conductive layers such as wirings and electrodes constituting the display device include aluminum, titanium, chromium, nickel, copper, lanthanum, zirconium, molybdenum, and silver. A metal such as tantalum or tungsten or an alloy containing the above metal as a main component. In addition, a film containing these materials may be used in a single layer or a laminate structure. For example, a single layer structure of an aluminum film containing ruthenium, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, and copper on a copper-magnesium-aluminum alloy film are laminated. a two-layer structure of a film, a two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or a titanium nitride film, an aluminum film or a copper film, and a titanium film or nitrogen are sequentially laminated. A three-layer structure of a titanium film, and a three-layer structure in which a molybdenum film or a molybdenum nitride film, an aluminum film or a copper film, and a molybdenum film or a molybdenum nitride film are sequentially laminated. Further, an oxide such as indium oxide, tin oxide or zinc oxide can be used. Further, it is preferable to use copper containing manganese to improve the controllability of the shape at the time of etching.

另外，作為透光性導電材料，可以使用氧化銦、銦錫氧化物、銦鋅氧化物、氧化鋅、添加有鎵的氧化鋅等導電氧化物或石墨烯。或者，可以使用金、銀、鉑、鎂、鎳、鎢、鉻、鉬、鐵、鈷、銅、鈀或鈦等金屬材料、包含該金屬材料的合金材料。或者，還可以使用該金屬材料的氮化物(例如，氮化鈦)等。另外，當使用金屬材料、合金材料(或者它們的氮化物)時，可以將其形成得薄到具有透光性。另外，可以將上述材料的疊層膜用作導電層。例如，藉由使用銀和鎂的合金與銦錫氧化物的疊層膜等，可以提高導電性，所以是較佳的。上述材料也可以用於構成顯示裝置的各種佈線及電極等的導電層、顯示元件所包括的導電層(被用作像素電極及共用電極的導電層)。 Further, as the light-transmitting conductive material, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or gallium-doped zinc oxide, or graphene can be used. Alternatively, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium or titanium, or an alloy material containing the metal material may be used. Alternatively, a nitride of the metal material (for example, titanium nitride) or the like can also be used. Further, when a metal material, an alloy material (or a nitride thereof) is used, it can be formed to be thin to have light transmissivity. Further, a laminated film of the above materials can be used as the conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and an indium tin oxide to improve conductivity. The above materials can also be used for a conductive layer of various wirings and electrodes constituting the display device, and a conductive layer (a conductive layer used as a pixel electrode and a common electrode) included in the display element.

[絕緣層] [Insulation]

作為可用於各絕緣層的絕緣材料，例如可以使用丙烯酸樹脂、環氧樹脂等樹脂、具有矽氧烷鍵的樹脂、無機絕緣材料諸如氧化矽、氧氮化矽、氮氧化矽、氮化矽或氧化鋁等。 As the insulating material which can be used for each insulating layer, for example, a resin such as an acrylic resin or an epoxy resin, a resin having a decane bond, an inorganic insulating material such as cerium oxide, cerium oxynitride, cerium oxynitride, tantalum nitride or Alumina, etc.

另外，發光元件較佳為設置於一對透水性低的絕緣膜之間。由此，能夠抑制水等雜質進入發光元件，從而能夠抑制裝置的可靠性下降。 Further, it is preferable that the light-emitting element is provided between a pair of insulating films having low water permeability. Thereby, it is possible to suppress impurities such as water from entering the light-emitting element, and it is possible to suppress a decrease in reliability of the device.

作為透水性低的絕緣膜，可以舉出氮化矽膜、氮氧化矽膜等含有氮及矽的膜以及氮化鋁膜等含有氮及鋁的膜等。另外，也可以使用氧化矽膜、氧氮化矽膜以及氧化鋁膜等。 Examples of the insulating film having a low water permeability include a film containing nitrogen and antimony such as a tantalum nitride film or a hafnium oxynitride film, and a film containing nitrogen and aluminum such as an aluminum nitride film. Further, a hafnium oxide film, a hafnium oxynitride film, an aluminum oxide film, or the like can also be used.

例如，透水性低的絕緣膜的水蒸氣透過量為1×10^-5[g/(m²．day)] 以下，較佳為1×10^-6[g/(m²．day)]以下，更佳為1×10^-7[g/(m²．day)]以下，進一步較佳為1×10^-8[g/(m²．day)]以下。 For example, the water vapor transmission amount of the insulating film having low water permeability is 1 × 10 ^-5 [g / (m ² .day)] or less, preferably 1 × 10 ^-6 [g / (m ² .day)] or less. More preferably, it is 1 × 10 ^-7 [g / (m ² .day)] or less, and further preferably 1 × 10 ^-8 [g / (m ² .day)] or less.

[液晶元件] [Liquid Crystal Element]

作為液晶元件，可以採用使用VA(Vertical Alignment：垂直配向)模式的元件。作為垂直配向模式，可以使用MVA(Multi-Domain Vertical Alignment：多象限垂直配向)模式、PVA(Patterned Vertical Alignment：垂直配向構型)模式、ASV(Advanced Super View：高級超視覺)模式等。 As the liquid crystal element, an element using a VA (Vertical Alignment) mode can be used. As the vertical alignment mode, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ASV (Advanced Super View) mode, or the like can be used.

另外，作為液晶元件，可以採用使用各種模式的液晶元件。例如，除了VA(Vertical Alignment：垂直配向)模式以外，可以使用TN(Twisted Nematic：扭曲向列)模式、IPS(In-Plane-Switching：平面切換)模式、FFS(Fringe Field Switching：邊緣電場切換)模式；ASM(Axially Symmetric Aligned Micro-cell：軸對稱排列微單元)模式、OCB(Optically Compensated Birefringence：光學補償彎曲)模式、FLC(Ferroelectric Liquid Crystal：鐵電性液晶)模式、AFLC(AntiFerroelectric Liquid Crystal：反鐵電液晶)模式、ECB(Electrically Controlled Birefringence：電控雙折射)模式、賓主模式等的液晶元件。 Further, as the liquid crystal element, a liquid crystal element using various modes can be employed. For example, in addition to the VA (Vertical Alignment) mode, TN (Twisted Nematic) mode, IPS (In-Plane-Switching) mode, and FFS (Fringe Field Switching) can be used. Mode; ASM (Axially Symmetric Aligned Micro-cell) mode, OCB (Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal: A liquid crystal element such as an antiferroelectric liquid crystal mode, an ECB (Electrically Controlled Birefringence) mode, or a guest mode.

另外，液晶元件是利用液晶的光學調變作用而控制光的透過或非透過的元件。液晶的光學調變作用由施加到液晶的電場(包括橫向電場、縱向電場或傾斜方向電場)控制。作為用於液晶元件的液晶可以使用熱致液晶、低分子液晶、高分子液晶、高分子分散型液晶(PDLC：Polymer Dispersed Liquid Crystal：聚合物分散液晶)、高分子網路型液晶(PNLC：Polymer Network Liquid Crystal)、鐵電液晶、反鐵電液晶等。這些液晶材料根據條件呈現出膽固醇相、層列相、立方相、手向列相、各向同性相等。 Further, the liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation effect of the liquid crystal. The optical modulation of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a transverse electric field, a longitudinal electric field, or an oblique electric field). As the liquid crystal used for the liquid crystal element, thermotropic liquid crystal, low molecular liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal (PDLC: Polymer Dispersed Liquid Crystal), and polymer network type liquid crystal (PNLC: Polymer) can be used. Network Liquid Crystal), ferroelectric liquid crystal, anti-ferroelectric liquid crystal, etc. These liquid crystal materials exhibit a cholesterol phase, a smectic phase, a cubic phase, a nematic phase, and an isotropic phase according to conditions.

另外，作為液晶材料，可以使用正型液晶和負型液晶中的任一種，根據所適用的模式或設計可以採用適當的液晶材料。 Further, as the liquid crystal material, any of a positive liquid crystal and a negative liquid crystal may be used, and a suitable liquid crystal material may be employed depending on the mode or design to be applied.

另外，為了控制液晶的配向，可以設置配向膜。在採用橫向電場方式的情況下，也可以使用不使用配向膜的呈現藍相的液晶。藍相是液晶相的一種，是指當使膽固醇液晶的溫度上升時即將從膽固醇相轉變到各向同性相之前出現的相。因為藍相只在窄的溫度範圍內出現，所以將其中混合了幾wt%以上的手性試劑的液晶組合物用於液晶層，以擴大溫度範圍。包含呈現藍相的液晶和手性試劑的液晶組成物的回應速度快，並且其具有光學各向同性。另外，包含呈現藍相的液晶和手性試劑的液晶組成物不需要配向處理，並且視角依賴性小。另外，由於不需要設置配向膜而不需要摩擦處理，因此可以防止由於摩擦處理而引起的靜電破壞，並可以降低製程中的液晶顯示裝置的不良及破損。 Further, in order to control the alignment of the liquid crystal, an alignment film may be provided. In the case of the transverse electric field method, a liquid crystal exhibiting a blue phase without using an alignment film can also be used. The blue phase is a kind of liquid crystal phase, and refers to a phase which occurs immediately before the temperature of the cholesteric liquid crystal rises from the transition of the cholesterol phase to the isotropic phase. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition in which several wt% or more of a chiral agent is mixed is used for the liquid crystal layer to expand the temperature range. A liquid crystal composition comprising a liquid crystal exhibiting a blue phase and a chiral agent has a fast response speed and is optically isotropic. In addition, the liquid crystal composition containing the liquid crystal exhibiting a blue phase and a chiral agent does not require an alignment treatment, and the viewing angle dependence is small. Further, since it is not necessary to provide the alignment film without the need of the rubbing treatment, it is possible to prevent electrostatic breakdown due to the rubbing treatment, and it is possible to reduce the defects and breakage of the liquid crystal display device in the process.

另外，作為液晶元件，可以採用透射型液晶元件、反射型液晶元件或半透射型液晶元件。 Further, as the liquid crystal element, a transmissive liquid crystal element, a reflective liquid crystal element, or a semi-transmissive liquid crystal element can be used.

在本發明的一個實施方式中，尤其可以採用反射型液晶元件。 In one embodiment of the invention, a reflective liquid crystal element can be used in particular.

當採用透射式液晶元件或半透射式液晶元件時，以夾著一對基板的方式設置兩個偏光板。另外，在一個偏光板的外側設置背光源。背光源可以是直下型背光源，也可以是邊緣照明型背光源。當使用具備LED的直下型背光源時，容易進行局部調光(local dimming)處理，由此可以提高對比，所以是較佳的。另外，當使用邊緣照明型背光源時，可以將包括背光源的模組形成得較薄，所以是較佳的。 When a transmissive liquid crystal element or a semi-transmissive liquid crystal element is used, two polarizing plates are provided so as to sandwich a pair of substrates. In addition, a backlight is provided outside the polarizing plate. The backlight can be either a direct-lit backlight or an edge-lit backlight. When a direct type backlight having an LED is used, it is easy to perform local dimming processing, whereby contrast can be improved, which is preferable. In addition, when an edge-illuminated backlight is used, a module including a backlight can be formed to be thin, so that it is preferable.

當採用反射型液晶元件時，將偏光板設置在顯示面一側。此外， 當在顯示面一側另外設置光擴散板時，可以提高可見度，所以是較佳的。 When a reflective liquid crystal element is used, the polarizing plate is disposed on the display surface side. Further, when a light diffusing plate is additionally provided on the display surface side, visibility can be improved, which is preferable.

另外，當採用反射型液晶元件或半透射型液晶元件時，也可以將前光源設置在偏光板的外側。作為前光源，可以使用邊緣照明型前光源。當使用具備LED的前光源時，可以降低功耗，所以是較佳的。 Further, when a reflective liquid crystal element or a semi-transmissive liquid crystal element is used, the front light source may be provided outside the polarizing plate. As the front light source, an edge illumination type front light source can be used. When a front light source having an LED is used, power consumption can be reduced, so that it is preferable.

[發光元件] [Light-emitting element]

發光元件可以使用能夠進行自發光的元件，並且在其範疇內包括由電流或電壓控制亮度的元件。例如，可以使用LED、有機EL元件以及無機EL元件等。 The light-emitting element may use an element capable of self-illumination and, within its scope, an element that controls brightness by current or voltage. For example, an LED, an organic EL element, an inorganic EL element, or the like can be used.

在本發明的一個實施方式中，尤其是，作為發光元件較佳為使用頂部發射型發光元件、底部發射型發光元件、雙面發射型發光元件等。作為提取光一側的電極使用透射可見光的導電膜。另外，作為不提取光一側的電極較佳為使用反射可見光的導電膜。 In one embodiment of the present invention, in particular, as the light-emitting element, a top emission type light-emitting element, a bottom emission type light-emitting element, a double-sided emission type light-emitting element, or the like is preferably used. As the electrode on the side where the light is extracted, a conductive film that transmits visible light is used. Further, as the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

EL層至少包括發光層。作為發光層以外的層，EL層可以還包括包含電洞注入性高的物質、電洞傳輸性高的物質、電洞阻擋材料、電子傳輸性高的物質、電子注入性高的物質或雙極性的物質(電子傳輸性及電洞傳輸性高的物質)等的層。 The EL layer includes at least a light emitting layer. As the layer other than the light-emitting layer, the EL layer may further include a substance having high hole injectability, a material having high hole transportability, a hole blocking material, a substance having high electron transport property, a substance having high electron injectability, or bipolar A layer of a substance (a substance having high electron transport property and high hole transportability).

EL層可以使用低分子化合物或高分子化合物，還可以包含無機化合物。構成EL層的層分別可以藉由蒸鍍法(包括真空蒸鍍法)、轉印法、印刷法、噴墨法、塗佈法等方法形成。 The EL layer may use a low molecular compound or a high molecular compound, and may also contain an inorganic compound. The layers constituting the EL layer can be formed by a vapor deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.

當在陰極與陽極之間施加高於發光元件的臨界電壓的電壓時，電洞從陽極一側注入到EL層中，而電子從陰極一側注入到EL層中。被注入的電子和電洞在EL層中再結合，由此，包含在EL層中的發光物 質發光。 When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and the anode, the hole is injected into the EL layer from the anode side, and electrons are injected into the EL layer from the cathode side. The injected electrons and holes are recombined in the EL layer, whereby the luminescent substances contained in the EL layer emit light.

當作為發光元件使用白色發光的發光元件時，較佳為使EL層包含兩種以上的發光物質。例如藉由以使兩個以上的發光物質的各發光處於互補色關係的方式選擇發光物質，可以獲得白色發光。例如，較佳為包含如下發光物質中的兩個以上：各呈現R(紅色)、G(綠色)、B(藍色)、Y(黃色)、O(橙色)等發光的發光物質及呈現包含R、G、B中的兩種以上的顏色的光譜成分的發光的發光物質。另外，較佳為使用來自發光元件的發光的光譜在可見光區域的波長(例如350nm至750nm)的範圍內具有兩個以上的峰值的發光元件。另外，在黃色的波長範圍中具有峰值的材料的發射光譜較佳為在綠色及紅色的波長範圍具有光譜成分的材料。 When a white light-emitting light-emitting element is used as the light-emitting element, it is preferable that the EL layer contains two or more kinds of light-emitting substances. For example, white light emission can be obtained by selecting a light-emitting substance such that each light-emitting of two or more light-emitting substances is in a complementary color relationship. For example, it is preferable to contain two or more of the following luminescent materials: luminescent substances each exhibiting R (red), G (green), B (blue), Y (yellow), O (orange), etc. A luminescent substance that emits light of spectral components of two or more colors of R, G, and B. Further, a light-emitting element having two or more peaks in a wavelength range of the visible light region (for example, 350 nm to 750 nm) using a spectrum of light emission from the light-emitting element is preferably used. Further, the emission spectrum of the material having a peak in the yellow wavelength range is preferably a material having a spectral component in the wavelength range of green and red.

EL層較佳為採用疊層結構，該疊層包括包含發射一種顏色的光的發光材料的發光層與包含發射其他顏色的光的發光材料的發光層。例如，EL層中的多個發光層既可以互相接觸而層疊，也可以隔著不包含任何發光材料的區域層疊。例如，可以在螢光發光層與磷光發光層之間設置如下區域：包含與該螢光發光層或磷光發光層相同的材料(例如主體材料、輔助材料)，並且不包含任何發光材料的區域。由此，發光元件的製造變得容易，另外，驅動電壓得到降低。 The EL layer preferably employs a laminate structure comprising a light-emitting layer comprising a light-emitting material that emits light of one color and a light-emitting layer comprising a light-emitting material that emits light of other colors. For example, a plurality of light-emitting layers in the EL layer may be laminated in contact with each other or may be laminated via a region not containing any light-emitting material. For example, a region may be provided between the fluorescent light-emitting layer and the phosphorescent light-emitting layer: a material including the same material as the fluorescent light-emitting layer or the phosphorescent light-emitting layer (for example, a host material, an auxiliary material), and a region not containing any light-emitting material. Thereby, the manufacture of a light-emitting element becomes easy, and the drive voltage is reduced.

另外，發光元件既可以是包括一個EL層的單元件，又可以是隔著電荷產生層層疊有多個EL層的串聯元件。 Further, the light-emitting element may be a unit member including one EL layer or a series element in which a plurality of EL layers are laminated via a charge generating layer.

作為透射可見光的導電膜，例如可以使用氧化銦、銦錫氧化物、銦鋅氧化物、氧化鋅、添加有鎵的氧化鋅等形成。另外，也可以藉由將金、銀、鉑、鎂、鎳、鎢、鉻、鉬、鐵、鈷、銅、鈀或鈦等金屬材料、包含這些金屬材料的合金或這些金屬材料的氮化物(例如，氮化鈦)等形成得薄到具有透光性來使用。另外，可以使用上述材料的疊 層膜作為導電層。例如，當使用銀和鎂的合金與銦錫氧化物的疊層膜等時，可以提高導電性，所以是較佳的。另外，也可以使用石墨烯等。 As the conductive film that transmits visible light, for example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium-added zinc oxide, or the like can be used. In addition, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium or titanium, an alloy containing these metal materials or a nitride of these metal materials may also be used ( For example, titanium nitride or the like is formed to be thin to have light transmissive properties. Further, a laminated film of the above materials may be used as the conductive layer. For example, when a laminated film of an alloy of silver and magnesium and indium tin oxide is used, conductivity can be improved, which is preferable. Further, graphene or the like can also be used.

作為反射可見光的導電膜，例如可以使用鋁、金、鉑、銀、鎳、鎢、鉻、鉬、鐵、鈷、銅或鈀等金屬材料或包含這些金屬材料的合金。另外，也可以在上述金屬材料或合金中添加有鑭、釹或鍺等。另外，也可以使用包含鈦、鎳或釹與鋁的合金(鋁合金)。另外，也可以使用包含銅、鈀或鎂與銀的合金。包含銀和銅的合金具有高耐熱性，所以是較佳的。並且，藉由以與鋁膜或鋁合金膜接觸的方式層疊金屬膜或金屬氧化物膜，可以抑制氧化。作為這種金屬膜、金屬氧化物膜的材料，可以舉出鈦、氧化鈦等。另外，也可以層疊上述透射可見光的導電膜與由金屬材料構成的膜。例如，可以使用銀與銦錫氧化物的疊層膜、銀和鎂的合金與銦錫氧化物的疊層膜等。 As the conductive film that reflects visible light, for example, a metal material such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium or an alloy containing these metal materials can be used. Further, ruthenium, osmium or iridium may be added to the above metal material or alloy. Further, an alloy (aluminum alloy) containing titanium, nickel or tantalum and aluminum may also be used. In addition, an alloy containing copper, palladium or magnesium and silver may also be used. Alloys containing silver and copper have high heat resistance and are therefore preferred. Further, by laminating the metal film or the metal oxide film in contact with the aluminum film or the aluminum alloy film, oxidation can be suppressed. Examples of the material of the metal film or the metal oxide film include titanium and titanium oxide. Further, a conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium, and an indium tin oxide can be used.

各電極可以藉由利用蒸鍍法或濺射法形成。除此之外，也可以藉由利用噴墨法等噴出法、網版印刷法等印刷法、或者鍍法形成。 Each electrode can be formed by a vapor deposition method or a sputtering method. Alternatively, it may be formed by a printing method such as a discharge method such as an inkjet method or a screen printing method, or a plating method.

另外，上述發光層以及包含電洞注入性高的物質、電洞傳輸性高的物質、電子傳輸性高的物質及電子注入性高的物質、雙極性物質等的層可以分別包含量子點等的無機化合物或高分子化合物(低聚物、枝狀聚合物或聚合物等)。例如，藉由將量子點用於發光層，也可以將其用作發光材料。 In addition, the light-emitting layer and the material containing a high hole injectability, a substance having high hole transportability, a substance having high electron transport property, a substance having high electron injectability, and a layer such as a bipolar substance may each include a quantum dot or the like. An inorganic compound or a polymer compound (oligomer, dendrimer, polymer, etc.). For example, by using a quantum dot for a light-emitting layer, it can also be used as a light-emitting material.

作為量子點材料，可以使用膠狀量子點材料、合金型量子點材料、核殼(Core Shell)型量子點材料、核型量子點材料等。另外，也可以使用包含第12族和第16族、第13族和第15族、第14族和第16族的元素組的材料。或者，可以使用包含鎘、硒、鋅、硫、磷、銦、碲、鉛、鎵、砷、鋁等元素的量子點材料。 As the quantum dot material, a colloidal quantum dot material, an alloy type quantum dot material, a core shell type quantum dot material, a nucleus type quantum dot material, or the like can be used. In addition, materials containing element groups of Groups 12 and 16, Group 13, and Group 15, Group 14, and Group 16 may also be used. Alternatively, a quantum dot material containing an element such as cadmium, selenium, zinc, sulfur, phosphorus, indium, antimony, lead, gallium, arsenic or aluminum may be used.

[黏合層] [adhesive layer]

作為黏合層，可以使用紫外線硬化型黏合劑等光硬化型黏合劑、反應硬化型黏合劑、熱固性黏合劑、厭氧黏合劑等各種硬化型黏合劑。作為這些黏合劑，可以舉出環氧樹脂、丙烯酸樹脂、矽酮樹脂、酚醛樹脂、聚醯亞胺樹脂、醯亞胺樹脂、PVC(聚氯乙烯)樹脂、PVB(聚乙烯醇縮丁醛)樹脂、EVA(乙烯-醋酸乙烯酯)樹脂等。尤其是，較佳為使用環氧樹脂等透濕性低的材料。另外，也可以使用兩液混合型樹脂。另外，也可以使用黏合薄片等。 As the adhesive layer, various curing adhesives such as a photocurable adhesive such as an ultraviolet curable adhesive, a reaction-curing adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. Examples of such a binder include an epoxy resin, an acrylic resin, an anthrone resin, a phenol resin, a polyimide resin, a quinone imine resin, a PVC (polyvinyl chloride) resin, and PVB (polyvinyl butyral). Resin, EVA (ethylene-vinyl acetate) resin, and the like. In particular, it is preferred to use a material having low moisture permeability such as an epoxy resin. Further, a two-liquid mixed type resin can also be used. Further, an adhesive sheet or the like can also be used.

另外，在上述樹脂中也可以包含乾燥劑。例如，可以使用鹼土金屬的氧化物(氧化鈣或氧化鋇等)那樣的藉由化學吸附吸附水分的物質。或者，也可以使用沸石或矽膠等藉由物理吸附來吸附水分的物質。當在樹脂中包含乾燥劑時，能夠抑制水分等雜質進入元件，從而提高顯示面板的可靠性，所以是較佳的。 Further, a desiccant may be contained in the above resin. For example, a substance which adsorbs moisture by chemical adsorption such as an oxide of an alkaline earth metal (such as calcium oxide or cerium oxide) can be used. Alternatively, a substance which adsorbs moisture by physical adsorption such as zeolite or silicone may be used. When a desiccant is contained in the resin, it is preferable to prevent impurities such as moisture from entering the element, thereby improving the reliability of the display panel.

另外，藉由在上述樹脂中混合折射率高的填料或光散射構件，可以提高光提取效率。例如，可以使用氧化鈦、氧化鋇、沸石、鋯等。 Further, by mixing a filler having a high refractive index or a light-scattering member in the above resin, the light extraction efficiency can be improved. For example, titanium oxide, cerium oxide, zeolite, zirconium or the like can be used.

[連接層] [connection layer]

作為連接層，可以使用異方性導電膜(ACF：Anisotropic Conductive Film)、異方性導電膏(ACP：Anisotropic Conductive Paste)等。 As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP), or the like can be used.

[彩色層] [color layer]

作為能夠用於彩色層的材料，可以舉出金屬材料、樹脂材料、包含顏料或染料的樹脂材料等。 Examples of the material that can be used for the color layer include a metal material, a resin material, a resin material containing a pigment or a dye, and the like.

[遮光層] [shading layer]

作為能夠用於遮光層的材料，可以舉出碳黑、鈦黑、金屬、金屬 氧化物或包含多個金屬氧化物的固溶體的複合氧化物等。遮光層也可以為包含樹脂材料的膜或包含金屬等無機材料的薄膜。另外，也可以對遮光層使用包含彩色層的材料的膜的疊層膜。例如，可以採用包含用於使某個顏色的光透過的彩色層的材料的膜與包含用於使其他顏色的光透過的彩色層的材料的膜的疊層結構。藉由使彩色層與遮光層的材料相同，除了可以使用相同的設備以外，還可以實現製程簡化，因此是較佳的。 Examples of the material which can be used for the light shielding layer include carbon black, titanium black, a metal, a metal oxide, or a composite oxide containing a solid solution of a plurality of metal oxides. The light shielding layer may also be a film containing a resin material or a film containing an inorganic material such as a metal. Further, a laminated film of a film of a material containing a color layer may be used for the light shielding layer. For example, a laminated structure of a film including a material of a color layer for transmitting light of a certain color and a film containing a color layer for transmitting light of other colors may be employed. By making the color layer and the material of the light-shielding layer the same, it is preferable that the process can be simplified in addition to the same equipment.

本實施方式的至少一部分可以與本說明書所記載的其他實施方式適當地組合而實施。 At least a part of the present embodiment can be implemented in appropriate combination with other embodiments described in the present specification.

實施方式4 Embodiment 4

參照圖19至圖20D對本發明的一個實施方式的輸入輸出面板的結構進行說明。 The configuration of the input/output panel according to an embodiment of the present invention will be described with reference to Figs. 19 to 20D.

圖19是說明本發明的一個實施方式的輸入輸出面板的結構的圖。圖19是輸入輸出面板所包括的像素的剖面圖。 Fig. 19 is a view for explaining the configuration of an input/output panel according to an embodiment of the present invention. 19 is a cross-sectional view of a pixel included in an input/output panel.

圖20A至圖20D是說明本發明的一個實施方式的輸入輸出面板的結構的圖。圖20A是說明圖19所示的輸入輸出面板的功能膜的結構的剖面圖，圖20B是說明輸入單元的結構的剖面圖，圖20C是說明第二單元的結構的剖面圖，圖20D是說明第一單元的結構的剖面圖。 20A to 20D are views for explaining the configuration of an input/output panel according to an embodiment of the present invention. Fig. 20A is a cross-sectional view showing the structure of a functional film of the input/output panel shown in Fig. 19, Fig. 20B is a cross-sectional view showing the structure of the input unit, Fig. 20C is a cross-sectional view showing the structure of the second unit, and Fig. 20D is a view A cross-sectional view of the structure of the first unit.

注意，在本說明書中，有時將取1以上的整數的值的變數用於符號。例如，有時將包含取1以上的整數的值的變數p的(p)用於指定最大為p個組件中的任一個的符號的一部分。另外，例如，有時將包含取1以上的整數的值的變數m及變數n的(m，n)用於指定最大為m×n個組件中的任一個的符號的一部分。 Note that in the present specification, a variable taking a value of an integer of 1 or more is sometimes used for a symbol. For example, (p) of the variable p containing a value of an integer of 1 or more is sometimes used to designate a part of the symbol of any one of the maximum p components. Further, for example, a variable m including a value of an integer of 1 or more and a variable n (m, n) may be used to designate a part of a symbol of at most m×n components.

本結構實例所說明的輸入輸出面板700TP3包括像素702(i，j)(參照圖19)。此外，輸入輸出面板700TP3包括第一單元101、第二單元102、輸入單元103和功能膜770P(參照圖20A至圖20D)。第一單元101包括功能層520，第二單元102包括功能層720。 The input/output panel 700TP3 illustrated in this structural example includes pixels 702(i, j) (refer to FIG. 19). Further, the input-output panel 700TP3 includes a first unit 101, a second unit 102, an input unit 103, and a functional film 770P (refer to FIGS. 20A to 20D). The first unit 101 includes a functional layer 520 and the second unit 102 includes a functional layer 720.

《像素702(i，j)》 Pixel 702 (i, j)

像素702(i，j)包括功能層520的一部分、第一顯示元件750(i，j)和第二顯示元件550(i，j)(參照圖19)。 Pixel 702(i,j) includes a portion of functional layer 520, first display element 750(i,j), and second display element 550(i,j) (see FIG. 19).

功能層520包括第一導電膜、第二導電膜、絕緣膜501C及像素電路530(i，j)。此外，未圖示的像素電路530(i，j)例如包括電晶體M。功能層520也可以包括光學元件560、覆蓋膜565及透鏡580。功能層520也可以包括絕緣膜528及絕緣膜521。此外，可以將層疊有絕緣膜521A及絕緣膜521B的材料用於絕緣膜521。 The functional layer 520 includes a first conductive film, a second conductive film, an insulating film 501C, and a pixel circuit 530 (i, j). Further, the pixel circuit 530 (i, j) not shown includes, for example, a transistor M. Functional layer 520 can also include optical element 560, cover film 565, and lens 580. The functional layer 520 may also include an insulating film 528 and an insulating film 521. Further, a material in which the insulating film 521A and the insulating film 521B are laminated may be used for the insulating film 521.

例如，可以將折射率為1.55附近的材料用於絕緣膜521A或絕緣膜521B。或者，可以將折射率為1.6附近的材料用於絕緣膜521A或絕緣膜521B。或者，可以將丙烯酸樹脂或聚醯亞胺用於絕緣膜521A或絕緣膜521B。 For example, a material having a refractive index of around 1.55 can be used for the insulating film 521A or the insulating film 521B. Alternatively, a material having a refractive index of around 1.6 may be used for the insulating film 521A or the insulating film 521B. Alternatively, an acrylic resin or a polyimide may be used for the insulating film 521A or the insulating film 521B.

絕緣膜501C包括夾在第一導電膜與第二導電膜之間的區域，絕緣膜501C包括開口591A。 The insulating film 501C includes a region sandwiched between the first conductive film and the second conductive film, and the insulating film 501C includes an opening 591A.

第一導電膜與第一顯示元件750(i，j)電連接。明確而言，第一導電膜與第一顯示元件750(i，j)的電極751(i，j)電連接。此外，可以將電極751(i，j)用作第一導電膜。 The first conductive film is electrically connected to the first display element 750(i, j). Specifically, the first conductive film is electrically connected to the electrode 751 (i, j) of the first display element 750 (i, j). Further, the electrode 751 (i, j) can be used as the first conductive film.

第二導電膜包括與第一導電膜重疊的區域。第二導電膜在開口 591A中與第一導電膜電連接。例如，可以將導電膜512B用作第二導電膜。第二導電膜與像素電路530(i，j)電連接。例如，可以將用作用於像素電路530(i，j)的開關SW1的電晶體的源極電極或汲極電極的導電膜用作第二導電膜。這裡，可以將在設置於絕緣膜501C中的開口591A中與第二導電膜電連接的第一導電膜稱為貫穿電極。 The second conductive film includes a region overlapping the first conductive film. The second conductive film is electrically connected to the first conductive film in the opening 591A. For example, the conductive film 512B can be used as the second conductive film. The second conductive film is electrically connected to the pixel circuit 530 (i, j). For example, a conductive film serving as a source electrode or a drain electrode of a transistor for the switch SW1 of the pixel circuit 530 (i, j) can be used as the second conductive film. Here, the first conductive film electrically connected to the second conductive film in the opening 591A provided in the insulating film 501C may be referred to as a through electrode.

第二顯示元件550(i，j)與像素電路530(i，j)電連接。第二顯示元件550(i，j)具有向功能層520發射光的功能。此外，第二顯示元件550(i，j)例如具有向透鏡580或光學元件560發射光的功能。 The second display element 550(i,j) is electrically coupled to the pixel circuit 530(i,j). The second display element 550(i,j) has a function of emitting light to the functional layer 520. Further, the second display element 550(i,j) has a function of emitting light to the lens 580 or the optical element 560, for example.

第二顯示元件(i，j)以在能夠看到使用第一顯示元件750(i，j)的顯示的區域的一部分中能夠看到使用上述第二顯示元件的顯示的方式設置。例如，作為第一顯示元件750(i，j)的電極751(i，j)的形狀，採用包括不遮斷第二顯示元件550(i，j)所發射的光的區域751H的形狀。此外，在圖式中以虛線的箭頭示出外光入射到第一顯示元件750(i，j)而被反射的方向，該第一顯示元件750(i，j)控制反射外光的強度來顯示影像資料。此外，在圖式中以實線的箭頭示出第二顯示元件550(i，j)向能夠看到使用第一顯示元件750(i，j)的顯示的區域的一部分發射光的方向。 The second display element (i, j) is arranged in such a manner that a display using the above-described second display element can be seen in a portion of the area where the display using the first display element 750 (i, j) can be seen. For example, as the shape of the electrode 751 (i, j) of the first display element 750 (i, j), a shape including a region 751H that does not block the light emitted by the second display element 550 (i, j) is employed. Further, in the drawing, the direction in which the external light is incident on the first display element 750 (i, j) is reflected by a broken arrow, and the first display element 750 (i, j) controls the intensity of the reflected external light to be displayed. video material. Furthermore, the direction in which the second display element 550(i,j) emits light to a portion of the area where the display using the first display element 750(i,j) can be seen is shown by solid arrows in the drawing.

由此，在能夠看到使用第一顯示元件的顯示的區域的一部分中，能夠看到使用第二顯示元件的顯示。或者，使用者能夠在不需要改變輸入輸出面板的姿勢等的情況下看到顯示。或者，可以將第一顯示元件所反射的光呈現的物體色乘以第二顯示元件所發射的光呈現的光源色。其結果，可以提供一種方便性或可靠性優異的新穎的輸入輸出面板。 Thereby, in a portion of the area where the display using the first display element can be seen, the display using the second display element can be seen. Alternatively, the user can see the display without changing the posture of the input/output panel or the like. Alternatively, the object color represented by the light reflected by the first display element may be multiplied by the color of the light source presented by the light emitted by the second display element. As a result, a novel input/output panel excellent in convenience or reliability can be provided.

例如，第一顯示元件750(i，j)包括電極751(i，j)、電極752和包含液晶材料的層753。此外，包括配向膜AF1和配向膜AF2。明確 而言，可以將反射型液晶元件用作第一顯示元件750(i，j)。 For example, the first display element 750(i,j) includes an electrode 751(i,j), an electrode 752, and a layer 753 comprising a liquid crystal material. In addition, an alignment film AF1 and an alignment film AF2 are included. Specifically, a reflective liquid crystal element can be used as the first display element 750(i, j).

例如，可以將折射率為2.0附近的透明導電膜用作電極752或電極751(i，j)。明確而言，可以將包含銦和錫和矽的氧化物用於電極752或電極751(i，j)。或者，可以將折射率為1.6附近的材料用於配向膜。 For example, a transparent conductive film having a refractive index of around 2.0 can be used as the electrode 752 or the electrode 751 (i, j). Specifically, an oxide containing indium and tin and antimony may be used for the electrode 752 or the electrode 751 (i, j). Alternatively, a material having a refractive index of around 1.6 can be used for the alignment film.

例如，第二顯示元件550(i，j)包括電極551(i，j)、電極552和包含發光材料的層553(j)。電極552包括與電極551(i，j)重疊的區域。包含發光材料的層553(j)包括夾在電極551(i，j)與電極552之間的區域。電極551(i，j)在連接部522中與像素電路530(i，j)電連接。明確而言，可以將有機EL元件用作第二顯示元件550(i，j)。 For example, the second display element 550(i,j) includes an electrode 551(i,j), an electrode 552, and a layer 553(j) containing a luminescent material. The electrode 552 includes a region overlapping the electrode 551(i, j). The layer 553(j) containing the luminescent material includes a region sandwiched between the electrode 551(i, j) and the electrode 552. The electrode 551(i, j) is electrically connected to the pixel circuit 530(i, j) in the connection portion 522. Specifically, an organic EL element can be used as the second display element 550(i, j).

例如，可以將折射率為2.0附近的透明導電膜用於電極551(i，j)。明確而言，可以將包含銦和錫和矽的氧化物用於電極551(i，j)。或者，可以將折射率為1.8附近的材料用於包含發光材料的層553(j)。 For example, a transparent conductive film having a refractive index of around 2.0 can be used for the electrode 551 (i, j). Specifically, an oxide containing indium, tin, and antimony may be used for the electrode 551 (i, j). Alternatively, a material having a refractive index of around 1.8 may be used for the layer 553(j) containing the luminescent material.

光學元件560具有透光性，光學元件560包括第一區域、第二區域及第三區域。 The optical element 560 is translucent, and the optical element 560 includes a first area, a second area, and a third area.

第一區域包括從第二顯示元件550(i，j)被供應可見光的區域，第二區域包括與覆蓋膜565接觸的區域，第三區域具有發射可見光的一部分的功能。此外，第三區域具有第一區域的被供應可見光的區域的面積以下的面積。 The first region includes a region where visible light is supplied from the second display element 550(i,j), and the second region includes a region in contact with the cover film 565, the third region having a function of emitting a portion of visible light. Further, the third region has an area below the area of the region of the first region to which the visible light is supplied.

覆蓋膜565具有對可見光的反射性，並具有反射可見光的一部分而將其供應到第三區域的功能。 The cover film 565 has a reflectance to visible light and has a function of reflecting a part of visible light to supply it to the third area.

例如，可以將金屬用於覆蓋膜565。明確而言，可以將包含銀的材料用於覆蓋膜565。例如，可以將包含銀及鈀等的材料或包含銀及銅等的材料用於覆蓋膜565。 For example, a metal can be used for the cover film 565. Specifically, a material containing silver can be used for the cover film 565. For example, a material containing silver, palladium or the like or a material containing silver, copper or the like can be used for the cover film 565.

《透鏡580》 Lens 580

可以將透過可見光的材料用於透鏡580。或者，可以將折射率為1.3以上且2.5以下的材料用於透鏡580。例如，可以將無機材料或有機材料用於透鏡580。 A material that transmits visible light can be used for the lens 580. Alternatively, a material having a refractive index of 1.3 or more and 2.5 or less may be used for the lens 580. For example, an inorganic material or an organic material can be used for the lens 580.

例如，可以將包含氧化物或硫化物的材料用於透鏡580。 For example, a material comprising an oxide or sulfide can be used for the lens 580.

明確而言，可以將氧化鈰、氧化鉿、氧化鑭、氧化鎂、氧化鈮、氧化鉭、氧化鈦、氧化釔、氧化鋅、包含銦和錫的氧化物、或者包含銦和鎵和鋅的氧化物等用於透鏡580。或者，可以將硫化鋅等用於透鏡580。 Specifically, cerium oxide, cerium oxide, cerium oxide, magnesium oxide, cerium oxide, cerium oxide, titanium oxide, cerium oxide, zinc oxide, an oxide containing indium and tin, or an oxidation containing indium and gallium and zinc may be used. The object or the like is used for the lens 580. Alternatively, zinc sulfide or the like can be used for the lens 580.

例如，可以將包含樹脂的材料用於透鏡580。明確而言，可以將引入氯、溴或碘的樹脂、引入重金屬原子的樹脂、引入芳雜環的樹脂、引入硫的樹脂等用於透鏡580。或者，可以將樹脂、具有其折射率高於樹脂的材料的奈米粒子的樹脂用於透鏡580。可以將氧化鈦或氧化鋯等用於奈米粒子。 For example, a resin-containing material can be used for the lens 580. Specifically, a resin to which chlorine, bromine or iodine is introduced, a resin to which a heavy metal atom is introduced, a resin to which an aromatic hetero ring is introduced, a resin to which sulfur is introduced, or the like can be used for the lens 580. Alternatively, a resin, a resin having nano particles having a refractive index higher than that of the resin may be used for the lens 580. Titanium oxide, zirconium oxide or the like can be used for the nanoparticles.

《功能層720》 "Function Layer 720"

功能層720包括夾在基板770與絕緣膜501C之間的區域。功能層720包括絕緣膜771及彩色膜CF1。 The functional layer 720 includes a region sandwiched between the substrate 770 and the insulating film 501C. The functional layer 720 includes an insulating film 771 and a color film CF1.

彩色膜CF1包括夾在基板770與第一顯示元件750(i，j)之間的區域。 The color film CF1 includes a region sandwiched between the substrate 770 and the first display element 750(i, j).

絕緣膜771包括夾在彩色膜CF1與包含液晶材料的層753之間的區域。由此，可以使基於彩色膜CF1的厚度的凹凸成為平坦。另外，可以抑制從彩色膜CF1等向包含液晶材料的層753的雜質的擴散。 The insulating film 771 includes a region sandwiched between the color film CF1 and the layer 753 containing the liquid crystal material. Thereby, the unevenness based on the thickness of the color film CF1 can be made flat. Further, it is possible to suppress the diffusion of impurities from the color film CF1 or the like to the layer 753 including the liquid crystal material.

例如，可以將折射率為1.55附近的丙烯酸樹脂用於絕緣膜771。 For example, an acrylic resin having a refractive index of around 1.55 can be used for the insulating film 771.

《基板570、基板770》 "Substrate 570, Substrate 770"

此外，本實施方式所說明的輸入輸出面板包括基板570和基板770。 Further, the input/output panel described in the present embodiment includes a substrate 570 and a substrate 770.

基板770包括與基板570重疊的區域。基板770包括在與基板570之間夾著功能層520的區域。 Substrate 770 includes a region that overlaps substrate 570. The substrate 770 includes a region sandwiching the functional layer 520 with the substrate 570.

基板770包括與第一顯示元件750(i，j)重疊的區域。例如，可以將雙折射得到抑制的材料用於該區域。另外，較佳為在基板770上設置反射防止層。藉由使用具有多層結構的介質層作為反射防止層，可以利用光的干涉效果抑制光反射。 Substrate 770 includes a region that overlaps first display element 750(i,j). For example, a material in which birefringence is suppressed can be used for the region. Further, it is preferable to provide an antireflection layer on the substrate 770. By using a dielectric layer having a multilayer structure as the antireflection layer, it is possible to suppress light reflection by utilizing the interference effect of light.

例如，可以將折射率為1.5附近的樹脂材料用於基板770。 For example, a resin material having a refractive index of around 1.5 can be used for the substrate 770.

《接合層505》 Bonding Layer 505

此外，本實施方式所說明的輸入輸出面板包括接合層505。 Further, the input/output panel described in the present embodiment includes a bonding layer 505.

接合層505包括夾在功能層520與基板570之間的區域，並具有將功能層520和基板570貼在一起的功能。 The bonding layer 505 includes a region sandwiched between the functional layer 520 and the substrate 570, and has a function of bonding the functional layer 520 and the substrate 570 together.

《結構體KB1、結構體KB2》 Structure KB1, Structure KB2

此外，本實施方式所說明的輸入輸出面板包括結構體KB1和結構體KB2。 Further, the input/output panel described in the present embodiment includes the structure KB1 and the structure KB2.

結構體KB1具有在功能層520與基板770之間提供指定的空隙的功能。結構體KB1包括與區域751H重疊的區域，結構體KB1具有透光性。由此，可以將第二顯示元件550(i，j)所發射的光供應到一個面，並將其從另一個面發射。 The structure KB1 has a function of providing a specified gap between the functional layer 520 and the substrate 770. The structure KB1 includes a region overlapping the region 751H, and the structure KB1 has light transmissivity. Thereby, the light emitted by the second display element 550(i,j) can be supplied to one face and emitted from the other face.

此外，結構體KB1包括與光學元件560重疊的區域，例如，將以與用於光學元件560的材料的折射率的差異為0.2以下的方式選擇的材料用於結構體KB1。由此，可以高效地利用第二顯示元件550(i，j)所發射的光。或者，可以擴大第二顯示元件550(i，j)的面積。或者，可以降低流過有機EL元件的電流的密度。 Further, the structure KB1 includes a region overlapping the optical element 560, and for example, a material selected in such a manner that the difference from the refractive index of the material for the optical element 560 is 0.2 or less is used for the structure KB1. Thereby, the light emitted by the second display element 550(i, j) can be utilized efficiently. Alternatively, the area of the second display element 550(i,j) can be enlarged. Alternatively, the density of the current flowing through the organic EL element can be lowered.

結構體KB2具有將偏振層770PB的厚度控制為規定的厚度的功能。結構體KB2包括與第二顯示元件550(i，j)重疊的區域，並具有透光性。 The structure KB2 has a function of controlling the thickness of the polarizing layer 770PB to a predetermined thickness. The structure KB2 includes a region overlapping the second display element 550(i, j) and has light transmissivity.

或者，可以將使規定的顏色的光透過的材料用於結構體KB1或結構體KB2。由此，例如可以將結構體KB1或結構體KB2用作濾色片。例如，可以將使藍色、綠色或紅色的光透過的材料用於結構體KB1或結構體KB2。此外，可以將使黃色的光或白色的光等透過的材料用於結構體KB1或結構體KB2。 Alternatively, a material that transmits light of a predetermined color may be used for the structure KB1 or the structure KB2. Thereby, for example, the structure KB1 or the structure KB2 can be used as a color filter. For example, a material that transmits light of blue, green, or red can be used for the structure KB1 or the structure KB2. Further, a material that transmits yellow light or white light or the like can be used for the structure KB1 or the structure KB2.

明確而言，可以將聚酯、聚烯烴、聚醯胺、聚醯亞胺、聚碳酸酯、聚矽氧烷或丙烯酸樹脂等或者從上述樹脂選擇的多個樹脂的複合材料等用於結構體KB1或結構體KB2。此外，可以使用感光材料形成結構體KB1或結構體KB2。 Specifically, a composite material of a polyester, a polyolefin, a polyamide, a polyimide, a polycarbonate, a polyoxyalkylene or an acrylic resin, or a plurality of resins selected from the above resins may be used for the structure. KB1 or structure KB2. Further, the structure KB1 or the structure KB2 may be formed using a photosensitive material.

例如，可以將折射率為1.5附近的丙烯酸樹脂用於結構體KB1。此外，可以將折射率為1.55附近的丙烯酸樹脂用於結構體KB2。 For example, an acrylic resin having a refractive index of around 1.5 can be used for the structure KB1. Further, an acrylic resin having a refractive index of around 1.55 can be used for the structure KB2.

《輸入單元103》 Input Unit 103

輸入單元103包括檢測元件。檢測元件具有檢測接近與像素702(i，j)重疊的區域的物體的功能。由此，可以將接近顯示部的手指等用作指示器而輸入位置資訊。 The input unit 103 includes a detecting element. The detecting element has a function of detecting an object approaching an area overlapping with the pixel 702 (i, j). Thereby, the position information can be input by using a finger or the like close to the display portion as an indicator.

例如，可以將靜電電容型接近感測器、電磁感應型接近感測器、光學式接近感測器、電阻膜式接近感測器或表面聲波式接近感測器等用於輸入單元103。明確而言，可以使用表面型靜電電容式、投影型靜電電容式或紅外線檢測型接近感測器。 For example, an electrostatic capacitance type proximity sensor, an electromagnetic induction type proximity sensor, an optical proximity sensor, a resistive film proximity sensor, a surface acoustic wave proximity sensor, or the like can be used for the input unit 103. Specifically, a surface type electrostatic capacitance type, a projection type electrostatic capacitance type, or an infrared detection type proximity sensor can be used.

例如，可以將包括靜電電容式接近感測器的折射率為1.6附近的觸控感測器用於輸入單元103。 For example, a touch sensor including a capacitive proximity sensor having a refractive index of 1.6 or so can be used for the input unit 103.

《功能膜770D、功能膜770P等》 "Functional membrane 770D, functional membrane 770P, etc."

此外，本實施方式所說明的輸入輸出面板700TP3包括功能膜770D和功能膜770P。 Further, the input/output panel 700TP3 described in the present embodiment includes a functional film 770D and a functional film 770P.

功能膜770D包括與第一顯示元件750(i，j)重疊的區域。功能膜770D包括在與功能層520之間夾著第一顯示元件750(i，j)的區域。 Functional film 770D includes a region that overlaps first display element 750(i,j). The functional film 770D includes a region sandwiching the first display element 750(i, j) with the functional layer 520.

例如，可以將光擴散薄膜用作功能膜770D。明確而言，可以將具有包括沿著與基板表面交叉的方向的軸的柱狀結構的材料用於功能膜770D。由此，可以容易朝沿著軸的方向使光透過，並且可以容易朝其他方向使光散射。或者，例如可以擴散第一顯示元件750(i，j)所反射的光。 For example, a light diffusing film can be used as the functional film 770D. Specifically, a material having a columnar structure including an axis along a direction crossing the substrate surface may be used for the functional film 770D. Thereby, light can be easily transmitted in the direction along the axis, and light can be easily scattered in other directions. Alternatively, for example, the light reflected by the first display element 750 (i, j) can be diffused.

功能膜770P包括偏振層770PB、相位差薄膜770PA或結構體KB2。 偏振層770PB包括開口，相位差薄膜770PA包括與偏振層770PB重疊的區域。此外，結構體KB2設置在開口中。 The functional film 770P includes a polarizing layer 770PB, a retardation film 770PA, or a structure KB2. The polarizing layer 770PB includes an opening, and the retardation film 770PA includes a region overlapping the polarizing layer 770PB. Further, the structure KB2 is disposed in the opening.

例如，可以將二色性色素、液晶材料及樹脂用於偏振層770PB。偏振層770PB具有偏振性。由此，可以將功能膜770P用作偏光板。 For example, a dichroic dye, a liquid crystal material, and a resin can be used for the polarizing layer 770PB. The polarizing layer 770PB has polarization. Thereby, the functional film 770P can be used as a polarizing plate.

偏振層770PB包括與第一顯示元件750(i，j)重疊的區域，結構體KB2包括與第二顯示元件550(i，j)重疊的區域。由此，可以將液晶元件用作第一顯示元件。例如，可以將反射型液晶元件用作第一顯示元件。或者，可以高效地提取出第二顯示元件所發射的光。或者，可以降低流過有機EL元件的電流的密度。或者，可以提高有機EL元件的可靠性。 The polarizing layer 770PB includes a region overlapping the first display element 750(i,j), and the structure KB2 includes a region overlapping the second display element 550(i,j). Thereby, the liquid crystal element can be used as the first display element. For example, a reflective liquid crystal element can be used as the first display element. Alternatively, the light emitted by the second display element can be efficiently extracted. Alternatively, the density of the current flowing through the organic EL element can be lowered. Alternatively, the reliability of the organic EL element can be improved.

例如，可以將防反射膜(AG(Anti-Glare film))、偏振膜、相位差薄膜用作功能膜770P。明確而言，可以將包含二色性色素的膜及相位差薄膜用作功能膜770P。 For example, an anti-reflective film (AG (Anti-Glare film), a polarizing film, and a retardation film can be used as the functional film 770P. Specifically, a film containing a dichroic dye and a retardation film can be used as the functional film 770P.

另外，可以將抑制塵埃的附著的抗靜電膜、不容易被弄髒的具有拒水性的膜、抑制使用時的損傷的硬塗膜等用作功能膜770P。 Further, an antistatic film that suppresses adhesion of dust, a film having water repellency that is not easily stained, a hard coat film that suppresses damage during use, and the like can be used as the functional film 770P.

例如，可以將折射率為1.6附近的材料用於光擴散薄膜。此外，可以將折射率為1.6附近的材料用於相位差薄膜770PA。 For example, a material having a refractive index of around 1.6 can be used for the light diffusing film. Further, a material having a refractive index of 1.6 or so can be used for the retardation film 770PA.

本實施方式的至少一部分可以與本說明書所記載的其他實施方式適當地組合而實施。 At least a part of the present embodiment can be implemented in appropriate combination with other embodiments described in the present specification.

實施方式5 Embodiment 5

在本實施方式中，對可使用本發明的一個實施方式製造的顯示模 組進行說明。 In the present embodiment, a display module which can be manufactured using one embodiment of the present invention will be described.

圖24A所示的顯示模組6000在上蓋6001與下蓋6002之間包括連接到FPC6005的顯示面板6006、框架6009、印刷電路板6010及電池6011。 The display module 6000 shown in FIG. 24A includes a display panel 6006, a frame 6009, a printed circuit board 6010, and a battery 6011 connected to the FPC 6005 between the upper cover 6001 and the lower cover 6002.

例如，可以將上述使用本發明的一個實施方式製造的顯示裝置用於顯示面板6006。由此，可以以高良率製造顯示模組。 For example, the display device manufactured using one embodiment of the present invention described above can be used for the display panel 6006. Thereby, the display module can be manufactured with high yield.

上蓋6001及下蓋6002可以根據顯示面板6006的尺寸適當地改變其形狀或尺寸。 The upper cover 6001 and the lower cover 6002 may be appropriately changed in shape or size according to the size of the display panel 6006.

可以與顯示面板6006重疊地設置觸控面板。觸控面板可以是電阻膜式觸控面板或靜電容量式觸控面板，並且可以與顯示面板6006重疊地設置。此外，也可以使顯示面板6006具有觸控面板功能，而不設置觸控面板。 The touch panel may be disposed to overlap the display panel 6006. The touch panel may be a resistive touch panel or a capacitive touch panel, and may be disposed to overlap the display panel 6006. In addition, the display panel 6006 can also have a touch panel function without providing a touch panel.

框架6009具有保護顯示面板6006的功能，還具有阻擋因印刷電路板6010的工作產生的電磁波的電磁屏蔽的功能。此外，框架6009也可以具有散熱板的功能。 The frame 6009 has a function of protecting the display panel 6006, and also has a function of blocking electromagnetic shielding of electromagnetic waves generated by the operation of the printed circuit board 6010. In addition, the frame 6009 can also have the function of a heat sink.

印刷電路板6010包括電源電路以及用來輸出視訊信號及時脈信號的信號生成電路等電路。作為對電源電路供應電力的電源，可以使用外部的商用電源，也可以使用利用另行設置的電池6011的電源。當使用商用電源時可以省略電池6011。另外，電池6011採用以不與使顯示面板彎曲的區域重疊的方式配置的結構。該結構從防止電池6011的虛線的觀點來看是較佳的。 The printed circuit board 6010 includes a power supply circuit and a signal generating circuit for outputting a video signal and a pulse signal. As the power source for supplying power to the power supply circuit, an external commercial power source may be used, or a power source using a separately provided battery 6011 may be used. The battery 6011 can be omitted when a commercial power source is used. Further, the battery 6011 is configured to be disposed so as not to overlap with a region where the display panel is curved. This structure is preferable from the viewpoint of preventing the broken line of the battery 6011.

此外，在顯示模組6000中還可以設置偏光板、相位差板、稜鏡片 等構件。 Further, members such as a polarizing plate, a phase difference plate, and a cymbal may be disposed in the display module 6000.

圖24B是具備光學觸控感測器的顯示模組6000的剖面示意圖。 24B is a schematic cross-sectional view of a display module 6000 having an optical touch sensor.

顯示模組6000包括設置在印刷電路板6010上的發光部6015及受光部6016。另外，由上蓋6001與下蓋6002圍繞的區域設置有一對導光部(導光部6017a、導光部6017b)。 The display module 6000 includes a light emitting portion 6015 and a light receiving portion 6016 which are disposed on the printed circuit board 6010. Further, a pair of light guiding portions (the light guiding portion 6017a and the light guiding portion 6017b) are provided in a region surrounded by the upper cover 6001 and the lower cover 6002.

顯示面板6006隔著框架6009與印刷電路板6010、電池6011重疊。顯示面板6006及框架6009固定在導光部6017a、導光部6017b。 The display panel 6006 overlaps the printed circuit board 6010 and the battery 6011 via the frame 6009. The display panel 6006 and the frame 6009 are fixed to the light guiding portion 6017a and the light guiding portion 6017b.

從發光部6015發射的光6018經過導光部6017a、顯示面板6006的頂部及導光部6017b到達受光部6016。例如，當光6018被指頭或觸控筆等被檢測體阻擋時，可以檢測觸摸操作。 The light 6018 emitted from the light-emitting portion 6015 passes through the light guiding portion 6017a, the top of the display panel 6006, and the light guiding portion 6017b to reach the light receiving portion 6016. For example, when the light 6018 is blocked by a subject such as a finger or a stylus, a touch operation can be detected.

例如，多個發光部6015沿著顯示面板6006的相鄰的兩個邊設置。多個受光部6016配置在隔著顯示面板6006與發光部6015對置的位置。由此，可以取得觸摸操作的位置的資訊。 For example, the plurality of light emitting portions 6015 are disposed along adjacent two sides of the display panel 6006. The plurality of light receiving units 6016 are disposed at positions facing the light emitting unit 6015 via the display panel 6006. Thereby, information on the position of the touch operation can be obtained.

作為發光部6015例如可以使用LED元件等光源。尤其是，作為發光部6015，較佳為使用發射不被使用者看到且對使用者無害的紅外線的光源。 As the light-emitting portion 6015, for example, a light source such as an LED element can be used. In particular, as the light-emitting portion 6015, it is preferable to use a light source that emits infrared rays that are not seen by the user and are harmless to the user.

作為受光部6016可以使用接收發光部6015所發射的光且將其轉換為電信號的光電元件。較佳為使用能夠接收紅外線的光電二極體。 As the light receiving portion 6016, a photoelectric element that receives the light emitted from the light emitting portion 6015 and converts it into an electrical signal can be used. It is preferable to use a photodiode capable of receiving infrared rays.

作為導光部6017a、導光部6017b可以使用至少透過光6018的構件。藉由使用導光部6017a及導光部6017b，可以將發光部6015及受光部6016配置在顯示面板6006中的下側，可以抑制外光到達受光部 6016而導致觸控感測器的錯誤工作。尤其較佳為使用吸收可見光且透過紅外線的樹脂。由此，更有效地抑制觸控感測器的錯誤工作。 As the light guiding portion 6017a and the light guiding portion 6017b, a member that transmits at least the light 6018 can be used. By using the light guiding portion 6017a and the light guiding portion 6017b, the light emitting portion 6015 and the light receiving portion 6016 can be disposed on the lower side of the display panel 6006, and the external light can be prevented from reaching the light receiving portion 6016, resulting in malfunction of the touch sensor. . It is particularly preferable to use a resin which absorbs visible light and transmits infrared rays. Thereby, the erroneous operation of the touch sensor is more effectively suppressed.

本實施方式的至少一部分可以與本說明書所記載的其他實施方式適當地組合而實施。 At least a part of the present embodiment can be implemented in appropriate combination with other embodiments described in the present specification.

實施方式6 Embodiment 6

圖25A至圖25F示出可用於具有根據本發明的一個實施方式的顯示裝置的可攜式終端的電子裝置的具體例子。 25A to 25F illustrate specific examples of an electronic device usable for a portable terminal having a display device according to an embodiment of the present invention.

圖25A示出一種可攜式遊戲機，其包括外殼5001、外殼5002、根據本發明的一個實施方式的顯示裝置5003、麥克風5005、揚聲器5006、操作鍵5007以及觸控筆5008等藉由將根據本發明的一個實施方式的顯示裝置5003用於可攜式遊戲機，無論使用環境下的外光的強度如何，也可以將顯示品質高的影像顯示在顯示裝置5003上，並可以抑制功耗。 25A illustrates a portable game machine including a housing 5001, a housing 5002, a display device 5003, a microphone 5005, a speaker 5006, an operation key 5007, and a stylus pen 5008 according to an embodiment of the present invention. The display device 5003 according to an embodiment of the present invention is used in a portable game machine, and can display an image with high display quality on the display device 5003 regardless of the intensity of external light in the use environment, and can suppress power consumption.

圖25B是一種手錶型可攜式終端，其包括外殼5201、根據本發明的一個實施方式的顯示裝置5202、手錶帶5203、光感測器5204以及開關5205等。藉由將根據本發明的一個實施方式的顯示裝置5202用於手錶型可攜式終端，無論使用環境下的外光的強度如何，也可以將顯示品質高的影像顯示在顯示裝置5202上，並可以抑制功耗。 25B is a watch type portable terminal including a housing 5201, a display device 5202, a wristwatch strap 5203, a photo sensor 5204, a switch 5205, and the like according to an embodiment of the present invention. By using the display device 5202 according to an embodiment of the present invention for a watch type portable terminal, an image with high display quality can be displayed on the display device 5202 regardless of the intensity of external light in the use environment, and Power consumption can be suppressed.

圖25C是一種平板電腦式個人電腦，其包括外殼5301、外殼5302、根據本發明的一個實施方式的顯示裝置5303、光感測器5304、光感測器5305、開關5306等。顯示裝置5303由外殼5301及外殼5302支撐。由於顯示裝置5303使用具有撓性的基板形成，因此可以被彎曲。藉由利用鉸鏈5307及5303改變外殼5301與外殼5302之間的角度，可以 以外殼5301與外殼5302重疊的方式折疊顯示裝置5303。雖然未圖示，但是也可以內置開閉感測器來將上述角度的變化用於顯示裝置5303的使用條件的資訊。藉由將根據本發明的一個實施方式的顯示裝置5303用於平板電腦式個人電腦，無論使用環境下的外光的強度如何，也可以將顯示品質高的影像顯示在顯示裝置5303上，並可以抑制功耗。 25C is a tablet type personal computer including a housing 5301, a housing 5302, a display device 5303 according to an embodiment of the present invention, a photo sensor 5304, a photo sensor 5305, a switch 5306, and the like. The display device 5303 is supported by the housing 5301 and the housing 5302. Since the display device 5303 is formed using a substrate having flexibility, it can be bent. By changing the angle between the outer casing 5301 and the outer casing 5302 by means of the hinges 5307 and 5303, the display device 5303 can be folded in such a manner that the outer casing 5301 overlaps the outer casing 5302. Although not shown, an open/close sensor may be incorporated to use the above-described change in angle for information on the use condition of the display device 5303. By using the display device 5303 according to an embodiment of the present invention for a tablet type personal computer, an image with high display quality can be displayed on the display device 5303 regardless of the intensity of the external light in the use environment. Suppress power consumption.

圖25D是示出汽車等移動體中的駕駛座位周邊的圖，其包括方向盤5801、支柱5802、門5803、前擋風玻璃5804以及本發明的一個實施方式的顯示裝置5805等。由於顯示裝置5805使用具有撓性的基板形成，因此可以被彎曲。由此，可以將該顯示裝置適用於具有平面或不同的曲面的汽車的顯示計量器等的儀表板。藉由將本發明的一個實施方式的顯示裝置5805用於汽車的儀表板，無論使用環境下的外光的強度如何，也可以將顯示品質高的影像顯示在顯示裝置5805上，並可以抑制功耗。 25D is a view showing a periphery of a driver's seat in a moving body such as an automobile, and includes a steering wheel 5801, a pillar 5802, a door 5803, a front windshield 5804, a display device 5805 according to an embodiment of the present invention, and the like. Since the display device 5805 is formed using a flexible substrate, it can be bent. Thereby, the display device can be applied to an instrument panel such as a display gauge of an automobile having a flat surface or a different curved surface. By using the display device 5805 according to an embodiment of the present invention for an instrument panel of an automobile, it is possible to display an image with high display quality on the display device 5805 regardless of the intensity of the external light in the use environment, and the work can be suppressed. Consumption.

圖25E是一種手錶型可攜式終端，其包括具有曲面的外殼5701以及根據本發明的一個實施方式的顯示裝置5702。藉由將具有撓性的基板用於根據本發明的一個實施方式的顯示裝置5702，可以使具有曲面的外殼5701支撐顯示裝置5702，從而可以提供撓性、輕量且使用方便的手錶型可攜式終端。並且，藉由將根據本發明的一個實施方式的顯示裝置5702用於手錶型可攜式終端，無論使用環境下的外光的強度如何，也可以將顯示品質高的影像顯示在顯示裝置5702上，並可以抑制功耗。 25E is a watch type portable terminal including a housing 5701 having a curved surface and a display device 5702 according to an embodiment of the present invention. By using the flexible substrate for the display device 5702 according to an embodiment of the present invention, the outer casing 5701 having a curved surface can support the display device 5702, thereby providing a flexible, lightweight, and convenient watch type portable. Terminal. Further, by using the display device 5702 according to an embodiment of the present invention for a watch type portable terminal, an image with high display quality can be displayed on the display device 5702 regardless of the intensity of external light in the use environment. And can suppress power consumption.

圖25F是一種行動電話，在具有曲面的外殼5901中設置有根據本發明的一個實施方式的顯示裝置5902、麥克風5907、揚聲器5904、相機5903、外部連接部5906以及操作按鈕5905。藉由將根據本發明的一個實施方式的顯示裝置5902用於行動電話，無論使用環境下的外光的強度如何，也可以將顯示品質高的影像顯示在顯示裝置5902上，並 可以抑制功耗。 25F is a mobile phone in which a display device 5902, a microphone 5907, a speaker 5904, a camera 5903, an external connection portion 5906, and an operation button 5905 according to an embodiment of the present invention are disposed in a housing 5901 having a curved surface. By using the display device 5902 according to an embodiment of the present invention for a mobile phone, it is possible to display an image with high display quality on the display device 5902 regardless of the intensity of the external light in the use environment, and it is possible to suppress power consumption. .

本實施方式可以與其他實施方式適當地組合而實施。 This embodiment can be implemented in appropriate combination with other embodiments.

〈關於本說明書等的記載的附記〉 <Notes on the description of this manual, etc.>

在本說明書等中，“第一”、“第二”、“第三”等序數詞是為了避免組件的混淆而附加的。因此，該序數詞不限制組件的個數。此外，該序數詞不限制組件的順序。 In the present specification and the like, ordinal numbers such as "first", "second", and "third" are added in order to avoid confusion of components. Therefore, the ordinal does not limit the number of components. Moreover, the ordinal does not limit the order of the components.

在本說明書等中，在方塊圖中根據功能對組件進行分類並以彼此獨立的方塊表示。然而，在實際的電路等中難以根據功能對組件進行分類，有時一個電路係關於到多個功能或者多個電路係關於到一個功能。因此，方塊圖中的方塊的分割不侷限於說明書中說明的組件，而可以根據情況適當地不同。 In this specification and the like, components are classified according to functions in block diagrams and are represented by blocks independent of each other. However, it is difficult to classify components according to functions in actual circuits and the like, and sometimes one circuit is related to a plurality of functions or a plurality of circuits related to one function. Therefore, the division of the blocks in the block diagram is not limited to the components described in the specification, but may be appropriately different depending on the situation.

在圖式中，有時使用同一元件符號表示同一組件、具有相同功能的組件、由同一材料形成的組件或者同時形成的組件等，並且有時省略重複說明。 In the drawings, the same component symbols are sometimes used to denote the same component, a component having the same function, a component formed of the same material, or a component formed at the same time, and the like, and the repeated description is sometimes omitted.

在本說明書等中，當說明電晶體的連接關係時，記載為“源極和汲極中的一個”(或者第一電極或第一端子)和“源極和汲極中的另一個”(或者第二電極或第二端子)。這是因為電晶體的源極和汲極根據電晶體的結構或工作條件等改變的緣故。注意，根據情況可以將電晶體的源極和汲極適當地換稱為源極(汲極)端子或源極(汲極)電極等。 In the present specification and the like, when describing the connection relationship of the transistors, it is described as "one of the source and the drain" (or the first electrode or the first terminal) and "the other of the source and the drain" ( Or a second electrode or a second terminal). This is because the source and the drain of the transistor are changed depending on the structure or operating conditions of the transistor. Note that the source and drain of the transistor may be appropriately referred to as a source (drain) terminal or a source (drain) electrode or the like as the case may be.

另外，在本說明書等中，可以適當地對電壓和電位進行換稱。電壓是指與參考電位之間的電位差，例如在參考電位為地電位(接地電位)時，可以將電壓換稱為電位。接地電位不一定意味著0V。注意， 電位是相對的，對佈線等供應的電位有時根據參考電位而變化。 Further, in the present specification and the like, the voltage and the potential can be appropriately changed. The voltage refers to the potential difference from the reference potential. For example, when the reference potential is the ground potential (ground potential), the voltage can be referred to as the potential. The ground potential does not necessarily mean 0V. Note that the potentials are relative, and the potential supplied to the wiring or the like sometimes varies depending on the reference potential.

在本說明書等中，開關是指具有藉由變為導通狀態(開啟狀態)或非導通狀態(關閉狀態)來控制是否使電流流過的功能的元件。或者，開關是指具有選擇並切換電流路徑的功能的元件。 In the present specification and the like, the switch refers to an element having a function of controlling whether or not a current flows by changing to an on state (on state) or a non-conduction state (off state). Alternatively, a switch refers to an element having the function of selecting and switching a current path.

例如，可以使用電開關或機械開關等。換而言之，開關只要可以控制電流，就不侷限於特定的元件。 For example, an electric switch or a mechanical switch or the like can be used. In other words, the switch is not limited to a specific component as long as it can control the current.

當作為開關使用電晶體時，電晶體的“導通狀態”是指視電晶體的源極與汲極為電短路的狀態。另外，電晶體的“非導通狀態”是指視電晶體的源極與汲極為電斷開的狀態。當將電晶體僅用作開關時，對電晶體的極性(導電型)沒有特別的限制。 When a transistor is used as a switch, the "on state" of the transistor means a state in which the source and the NMOS of the transistor are extremely electrically short-circuited. In addition, the "non-conducting state" of the transistor means a state in which the source of the transistor is extremely electrically disconnected from the crucible. When the transistor is used only as a switch, there is no particular limitation on the polarity (conductivity type) of the transistor.

在本說明書等中，像素指的是例如能夠控制明亮度的一個單元。因此，作為一個例子，一個像素指的是一個色彩單元，並用該一個色彩單元來顯示明亮度。因此，在採用由R(紅色)、G(綠色)和B(藍色)這些色彩單元構成的彩色顯示裝置的情況下，將像素的最小單位設置為由R的像素、G的像素以及B的像素這三個像素構成的像素。有時，將RGB的每一個像素稱為子像素，將RGB的子像素總稱為像素。 In the present specification and the like, a pixel refers to, for example, one unit capable of controlling brightness. Thus, as an example, a pixel refers to a color unit and uses that one color unit to display brightness. Therefore, in the case of using a color display device composed of color units such as R (red), G (green), and B (blue), the minimum unit of the pixel is set to be a pixel of R, a pixel of G, and B. A pixel composed of three pixels of pixels. Sometimes, each pixel of RGB is referred to as a sub-pixel, and sub-pixels of RGB are collectively referred to as a pixel.

再者，色彩單元並不侷限於三種顏色，也可以使用三種以上的顏色，例如有RGBW(W是白色)或對RGB追加黃色(yellow)、青色(cyan)、洋紅色(magenta)的顏色等。 Furthermore, the color unit is not limited to three colors, and three or more colors may be used, for example, RGBW (W is white) or yellow (yellow), cyan (myan), magenta (magenta), etc. for RGB. .

在本說明書等中，“A與B連接”除了包括A與B直接連接的情況以外，還包括A與B電連接的情況。在此，“A與B電連接”是指當在A與B之間存在具有某種電作用的物件時，能夠在A和B之間進行電信號的交換的情況。 In the present specification and the like, "A and B are connected" include a case where A and B are electrically connected in addition to the case where A and B are directly connected. Here, "A and B are electrically connected" means a case where an electrical signal can be exchanged between A and B when an object having a certain electrical action exists between A and B.

Claims (8)

一種顯示裝置，包括：信號生成電路；第一閘極驅動器；第二閘極驅動器；以及具有像素的顯示部，其中，該像素包括液晶元件、發光元件、控制該液晶元件的顯示的第一像素電路以及控制該發光元件的顯示的第二像素電路，該顯示部包括第一顯示部及第二顯示部，該第一閘極驅動器具有對該第一像素電路輸出第一掃描信號的功能，該第二閘極驅動器具有對該第二像素電路輸出第二掃描信號的功能，該第一顯示部具有分別從該第一閘極驅動器及該第二閘極驅動器輸出該第一掃描信號及該第二掃描信號而進行顯示的功能，並且，該第二顯示部具有停止該第一閘極驅動器所輸出的該第一掃描信號及該第二閘極驅動器所輸出的該第二掃描信號而進行顯示的功能。  A display device comprising: a signal generating circuit; a first gate driver; a second gate driver; and a display portion having pixels, wherein the pixel comprises a liquid crystal element, a light emitting element, and a first pixel that controls display of the liquid crystal element a circuit and a second pixel circuit for controlling display of the light emitting element, the display portion including a first display portion and a second display portion, the first gate driver having a function of outputting a first scan signal to the first pixel circuit, The second gate driver has a function of outputting a second scan signal to the second pixel circuit, and the first display portion has the first scan signal and the first scan signal output from the first gate driver and the second gate driver respectively a function of displaying a second scan signal, wherein the second display unit stops displaying the first scan signal output by the first gate driver and the second scan signal output by the second gate driver The function.   根據申請專利範圍第1項之顯示裝置，其中該信號生成電路具有輸出對從該第一閘極驅動器向該顯示部的該第一掃描信號的輸出或停止進行控制的信號的功能以及輸出對從該第二閘極驅動器向任意行的該像素的該第二掃描信號的輸出或停止進行控制的信號的功能。  A display device according to claim 1, wherein the signal generating circuit has a function of outputting a signal for controlling output or stop of the first scan signal from the first gate driver to the display portion, and an output pair The second gate driver functions to output or stop the control of the second scan signal of the pixel of any row.   根據申請專利範圍第1或2項之顯示裝置，其中該第一像素電路及該第二像素電路包括電晶體，並且該電晶體在半導體層中具有金屬氧化物。  A display device according to claim 1 or 2, wherein the first pixel circuit and the second pixel circuit comprise a transistor, and the transistor has a metal oxide in the semiconductor layer.   根據申請專利範圍第3項之顯示裝置，其中該第一像素電路所包括的該電晶體與該第二像素電路所包括 的該電晶體設置在同一層中。  The display device of claim 3, wherein the transistor included in the first pixel circuit is disposed in the same layer as the transistor included in the second pixel circuit.   根據申請專利範圍第1至4中任一項之顯示裝置，其中該液晶元件包括設置有開口的反射電極，具有由該反射電極反射外光進行顯示的功能，並且該發光元件具有經過該開口發射光而進行顯示的功能。  The display device according to any one of claims 1 to 4, wherein the liquid crystal element includes a reflective electrode provided with an opening, having a function of reflecting external light for display by the reflective electrode, and the light emitting element has a light emitted through the opening Light display function.   一種電子裝置，包括：顯示裝置；以及外殼，其中，該顯示裝置包括：信號生成電路；第一閘極驅動器；第二閘極驅動器；以及具有像素的顯示部，該像素包括液晶元件、發光元件、控制該液晶元件的顯示的第一像素電路以及控制該發光元件的顯示的第二像素電路，該顯示部包括第一顯示部、第二顯示部以及第三顯示部，該第一閘極驅動器具有對該第一顯示部至該第三顯示部所包括的該像素的該第一像素電路輸出第一掃描信號的功能，該第二閘極驅動器具有對該第一顯示部至該第三顯示部所包括的該像素的該第二像素電路輸出第二掃描信號的功能，該第一顯示部是在平面上顯示影像的區域，該第二顯示部是與該第一顯示部相鄰且在曲面上顯示影像的區域，該第三顯示部是與該第二顯示部相鄰且在平面上顯示影像的區域，該第一顯示部及該第二顯示部具有分別從該第一閘極驅動器及該第二閘極驅動器輸出該第一掃描信號及該第二掃描信號而進行顯示的功能，並且，該第三顯示部具有停止該第一閘極驅動器所輸出的該第一掃描信號及該第二閘極驅動器所輸出的該第二掃描信號而進行顯示的功能。  An electronic device comprising: a display device; and a housing, wherein the display device comprises: a signal generating circuit; a first gate driver; a second gate driver; and a display portion having a pixel, the pixel comprising a liquid crystal element, a light emitting element a first pixel circuit for controlling display of the liquid crystal element and a second pixel circuit for controlling display of the light emitting element, the display portion including a first display portion, a second display portion, and a third display portion, the first gate driver Having a function of outputting a first scan signal to the first pixel circuit of the pixel included in the first display portion to the third display portion, the second gate driver having the first display portion to the third display The second pixel circuit of the pixel included in the portion outputs a function of displaying a second scanning signal, the first display portion is an area for displaying an image on a plane, and the second display portion is adjacent to the first display portion and An area for displaying an image on the curved surface, the third display portion is an area adjacent to the second display portion and displaying an image on a plane, the first display portion and the second display Having a function of outputting the first scan signal and the second scan signal from the first gate driver and the second gate driver for display, and the third display portion has a stop of the first gate driver And outputting the first scan signal and the second scan signal output by the second gate driver to perform display.   根據申請專利範圍第6項之電子裝置，其中該信號生成電路具有輸出對從該第一閘極驅動器向該顯示部的該第一掃描信號的輸出或停止進行控制的信號的功能以及輸出對從該第二閘極驅動器向任意行的該像素的該第二掃描信號的輸出或停止進行控制的信號的功能。  The electronic device of claim 6, wherein the signal generating circuit has a function of outputting a signal for controlling output or stop of the first scan signal from the first gate driver to the display portion, and an output pair The second gate driver functions to output or stop the control of the second scan signal of the pixel of any row.   根據申請專利範圍第6或7項之顯示裝置，其中該外殼包括第一外殼、第二外殼以及第三外殼，該第一顯示部設置於該第一外殼中，該第二顯示部設置於該第二外殼中，該第三顯示部設置於該第三外殼中，並且該第二外殼具有比該第一外殼及該第三外殼薄的結構。  The display device of claim 6 or 7, wherein the outer casing comprises a first outer casing, a second outer casing and a third outer casing, wherein the first display portion is disposed in the first outer casing, and the second display portion is disposed on the In the second outer casing, the third display portion is disposed in the third outer casing, and the second outer casing has a thinner structure than the first outer casing and the third outer casing.