TW201819653A - A method for fabricated copper indium gallium selenide sulfide thin film - Google Patents

A method for fabricated copper indium gallium selenide sulfide thin film Download PDF

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TW201819653A
TW201819653A TW105138746A TW105138746A TW201819653A TW 201819653 A TW201819653 A TW 201819653A TW 105138746 A TW105138746 A TW 105138746A TW 105138746 A TW105138746 A TW 105138746A TW 201819653 A TW201819653 A TW 201819653A
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gas
reaction chamber
indium gallium
copper indium
gallium selenide
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TW105138746A
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TWI596234B (en
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吳政翰
梁仕昌
魏肇男
倪國裕
薄慧雲
許春耀
黃鵬丞
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國家中山科學研究院
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The present invention provides a method for fabricated copper indium gallium selenide sulfide thin film solar cell by surface sulfurization using Laminar flow method with a vacuum pump, a pressure control valve, which is melting sulfur powder to produce sulfur vapor, a reaction chamber is connected with a pressure control valve, and a graphite holder posits in a reaction chamber, a turbulent flow converts laminar flow by separating it into a graphite holder with an array of thin, parallel channels. After sulfurization treatment, thin film uniformity, stability will be improved, we look forward to achieve mass production in large area and increasing the efficiency of the solar cell.

Description

銅銦鎵硒薄膜硫化裝置  Copper indium gallium selenide thin film vulcanizing device  

本發明係關於硫化製程之設備，尤其是一種能將紊亂的硫氣體轉換為穩定分層之硫氣體，以對銅銦鎵硒薄膜進行硫化之銅銦鎵硒薄膜硫化裝置。 The invention relates to a device for a vulcanization process, in particular to a copper indium gallium selenide thin film vulcanization device capable of converting a disordered sulfur gas into a stable layered sulfur gas for vulcanizing a copper indium gallium selenide film.

由於近年來地球上能源短缺的問題，太陽能電池已漸引起人們關注。太陽能電池可以簡單區分為矽晶太陽能電池及薄膜太陽能電池，矽晶太陽能電池因為製程技術成熟及轉換效率較高成為目前市場的主流。但是，由於矽晶太陽能電池的材料及生產成本高昂，目前尚無法普及於市場。相對地，薄膜太陽能電池通常是將光吸收層製作於非晶矽的基板上，例如是玻璃基板，相較於矽晶太陽能電池所使用的矽晶圓基板，玻璃基板價格便宜且沒有短缺的問題。所以，薄膜太陽能電池已被視為未來取代矽晶太陽能電池之產品。 Due to the shortage of energy on the earth in recent years, solar cells have drawn attention. Solar cells can be easily divided into twin-crystal solar cells and thin-film solar cells, which have become the mainstream of the market because of mature process technology and high conversion efficiency. However, due to the high material and production cost of the twinned solar cells, it is currently not popular in the market. In contrast, a thin film solar cell usually has a light absorbing layer formed on an amorphous germanium substrate, such as a glass substrate. Compared with a germanium wafer substrate used in a twinned solar cell, the glass substrate is inexpensive and has no shortage. . Therefore, thin film solar cells have been regarded as products that will replace silicon solar cells in the future.

其中，銅銦鎵硒(CIGS)薄膜太陽能電池由於其轉換效率較高而成為較常使用之薄膜太陽能電池。為了提升銅銦鎵硒薄膜太陽能電池效率，透過許多研究得知進行硫化製程步驟是必要的，硫化後能夠改善開路電壓、減少載子再結合機率、改善p-n介面等。為了製程之穩定性，傳統常使用硫 化氫當作原料以進行硫化製程，但是硫化氫係為有毒物質，因此會產生製程之安全問題，故現今有直接將硫粉直接加熱蒸發之方式已完成硫化製程。然而，硫化製程中，硫粉蒸發後的硫氣體流動不易控制，容易使硫擴散至銅銦鎵硒吸收層時發生擴散不均，而使得穩定性差，若是僅進行小面積之硫化，雖仍有擴散不均等情事，但還能勉強使用，不過當需要將大面積之銅銦鎵硒薄膜硫化時，便會造成均勻性不佳、製作成元件後效能降低等情況發生，實為不便。 Among them, copper indium gallium selenide (CIGS) thin film solar cells have become more commonly used thin film solar cells due to their high conversion efficiency. In order to improve the efficiency of the copper indium gallium selenide thin film solar cell, it has been known through many studies that the vulcanization process step is necessary, and the vulcanization can improve the open circuit voltage, reduce the carrier recombination probability, and improve the p-n interface. For the stability of the process, hydrogen sulfide is often used as a raw material for the vulcanization process, but hydrogen sulfide is a toxic substance, which causes safety problems in the process. Therefore, it has been directly vulcanized by direct heating and evaporation of sulfur powder. Process. However, in the vulcanization process, the flow of sulfur gas after evaporation of the sulfur powder is difficult to control, and diffusion unevenness occurs when the sulfur diffuses to the copper indium gallium selenide absorption layer, which results in poor stability, and if only a small area is vulcanized, there is still Diffusion is not uniform, but it can be used barely. However, when it is necessary to vulcanize a large area of copper indium gallium selenide film, it will cause poor uniformity and reduced efficiency after fabrication into components, which is inconvenient.

有鑑於此，本案發明人感其未臻完善而竭其心智苦心研究，並憑其從事該項產業多年之累積經驗，進而提供一種銅銦鎵硒薄膜硫化裝置，以期可以改善上述習知技術之缺失。 In view of this, the inventor of this case feels that he has tried his best to study it, and based on his accumulated experience in the industry for many years, he has provided a copper indium gallium selenide thin film vulcanizing device, in order to improve the above-mentioned conventional technology. Missing.

本發明之一目的，旨在提供一種銅銦鎵硒薄膜硫化裝置，讓裝置內經加熱蒸發後的紊亂硫氣體能夠以穩定層流的形式擴散至銅銦鎵硒薄膜表面，讓無論大面積或小面積之銅銦鎵硒薄膜皆能夠具有均勻硫化，進而提升光電轉換效率之效果。 An object of the present invention is to provide a copper indium gallium selenide thin film vulcanizing device, which can disperse the turbulent sulfur gas heated and evaporated in the device into the surface of the copper indium gallium selenide film in a stable laminar flow, so that no matter large area or small The area of copper indium gallium selenide film can have uniform vulcanization, thereby improving the photoelectric conversion efficiency.

為達上述目的，本發明之銅銦鎵硒薄膜硫化裝置，其包括：一抽氣幫浦；一氣體供應器，其係供以將硫粉加熱產生硫氣體；一反應室，其係分別與該抽氣幫浦與該氣體供應器相互連通；及一氣體分流件，其係設於該反應室內， 且該氣體分流件係具有複數薄型通道，該等薄型通道係為堆疊排列且相互平行，每一該薄型通道內係具有一放置槽，以供放置該銅銦鎵硒薄膜，而該氣體分流件之材質可為石墨。 To achieve the above object, the copper indium gallium selenide thin film vulcanizing apparatus of the present invention comprises: a pumping pump; a gas supply unit for heating the sulfur powder to generate sulfur gas; and a reaction chamber, respectively The gas pump is in communication with the gas supply; and a gas splitter is disposed in the reaction chamber, and the gas splitter has a plurality of thin channels arranged in a stack and parallel to each other. Each of the thin channels has a placement groove for placing the copper indium gallium selenide film, and the gas shunt member is made of graphite.

其中，當該等放置槽放置有該等銅銦鎵硒薄膜並將反應室封閉時，該抽氣幫浦係抽取該反應室之空氣，使內部氣壓低於1×10-2托(torr)，再將事先放置於該氣體供應器內之硫粉加熱形成硫氣體，並將其輸送至該反應室，使剛進入該反應室之紊亂硫氣體透過該氣體分流件之該等薄型通道轉換成層流硫氣體後，對該等銅銦鎵硒薄膜進行硫化反應，使硫元素能夠均勻擴散至每一該銅銦鎵硒薄膜表面，以提升光電轉換效率。 Wherein, when the copper indium gallium selenide film is placed in the placing tank and the reaction chamber is closed, the air pumping chamber extracts the air of the reaction chamber, so that the internal air pressure is lower than 1×10 -2 Torr (torr) And sulphur powder previously placed in the gas supply is heated to form a sulfur gas, and is sent to the reaction chamber, so that the turbulent sulfur gas that has just entered the reaction chamber is converted into layers through the thin passages of the gas flow dividing member. After the sulfur gas is flowed, the copper indium gallium selenide film is subjected to a vulcanization reaction, so that sulfur element can be uniformly diffused to the surface of each of the copper indium gallium selenide film to improve photoelectric conversion efficiency.

本發明一實施例中，該反應室與該氣體供應器之間係具有一壓力控制器，以控制硫氣體進入該反應室之氣壓，便能因需求不同更改製程變因，以得出所需之薄膜性質。 In an embodiment of the invention, a pressure controller is disposed between the reaction chamber and the gas supply to control the gas pressure of the sulfur gas entering the reaction chamber, and the process variation can be changed according to requirements to obtain the required Film properties.

本發明一實施例中，更具有一氣體流量控制器，其係與該反應室連通，以供向該反應室通以氮氣或氬氣等不參與反應之氣體，便能因需求不同更改製程變因，以得出所需之薄膜性質。 In an embodiment of the invention, there is further provided a gas flow controller connected to the reaction chamber for supplying a gas such as nitrogen or argon which does not participate in the reaction to the reaction chamber, so that the process can be changed according to different requirements. Therefore, in order to obtain the desired film properties.

如此一來，本發明係藉由該氣體分流件以限制剛進入反應室之紊亂硫氣體，使其必須分別進入該等薄型通道，而轉換為穩定之層流硫氣體，便能均勻地於每一銅銦鎵硒薄膜之表面上擴散硫氣體，以達到大面積均勻硫化並增加 開路電壓，進而提升光電轉換效率。 In this way, the present invention utilizes the gas splitter to restrict the turbulent sulfur gas that has just entered the reaction chamber, so that it must enter the thin channels separately, and convert to a stable laminar sulfur gas, which can be evenly distributed. A copper indium gallium selenide film diffuses sulfur gas on the surface to achieve uniform vulcanization over a large area and increase the open circuit voltage, thereby improving the photoelectric conversion efficiency.

以上之概述與接下來的詳細說明及附圖，皆是為了能進一步說明本發明達到預定目的所採取的方式、手段及功效。而有關本發明的其他目的及優點，將在後續的說明及圖示中加以闡述。 The above summary, the following detailed description and the accompanying drawings are intended to further illustrate the manner, the Other objects and advantages of the present invention will be described in the following description and drawings.

1‧‧‧銅銦鎵硒薄膜硫化裝置 1‧‧‧ copper indium gallium selenide thin film vulcanizing device

11‧‧‧抽氣幫浦 11‧‧‧Exhaust pump

12‧‧‧氣體供應器 12‧‧‧ gas supply

13‧‧‧反應室 13‧‧‧Reaction room

131‧‧‧加熱器 131‧‧‧heater

14‧‧‧氣體分流件 14‧‧‧ gas distribution parts

141‧‧‧薄型通道 141‧‧‧Thin channel

142‧‧‧放置槽 142‧‧‧Place slot

15‧‧‧壓力控制器 15‧‧‧ Pressure controller

16‧‧‧氣體流量控制器 16‧‧‧ gas flow controller

17‧‧‧氣體鋼瓶 17‧‧‧ gas cylinder

2‧‧‧銅銦鎵硒薄膜 2‧‧‧ Copper Indium Gallium Selenide Film

S1-S4‧‧‧步驟 S1-S4‧‧‧ steps

第1圖，為本發明較佳實施例之整體示意圖。 Figure 1 is a schematic overall view of a preferred embodiment of the present invention.

第2圖，為本發明較佳實施例之氣體分流件示意圖。 Figure 2 is a schematic view of a gas splitter in accordance with a preferred embodiment of the present invention.

第3圖，為本發明較佳實施例之氣體流動示意圖。 Figure 3 is a schematic illustration of gas flow in accordance with a preferred embodiment of the present invention.

第4圖，為本發明較佳實施例之步驟圖。 Figure 4 is a flow diagram of a preferred embodiment of the present invention.

以下係藉由特定的具體實例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點與功效。 The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate other advantages and functions of the present invention from the disclosure herein.

請一併參閱第1圖至第4圖，其係為本發明較佳實施例之整體示意圖、氣體分流件示意圖、氣體流動示意圖和步驟圖。如圖所示，本發明之銅銦鎵硒薄膜硫化裝置1，其包括：一抽氣幫浦11、一氣體供應器12、一反應室13及一氣體分流件14。 Please refer to FIG. 1 to FIG. 4 together, which are an overall schematic view of a preferred embodiment of the present invention, a schematic diagram of a gas splitter, a gas flow diagram and a step diagram. As shown, the copper indium gallium selenide thin film vulcanizing apparatus 1 of the present invention comprises: an exhaust pump 11, a gas supply 12, a reaction chamber 13, and a gas splitter 14.

該反應室13係分別與該抽氣幫浦11及該氣體供應器12相互連通，該抽氣幫浦11係透過與該反應室13連通 而將該反應室13的空氣抽走，而該氣體供應器12則供以將硫粉加熱產生硫氣體後輸送至相連通之該反應室13。並且，該氣體分流件14係設於該反應室13內，且該氣體分流件14係具有複數薄型通道141，其係為堆疊排列且相互平行，每一該薄型通道141內係具有一放置槽142，以供放置該銅銦鎵硒薄膜2，而在本實施例中，該反應室13之材質可為石墨，以提升導熱性。 The reaction chamber 13 is in communication with the pumping pump 11 and the gas supplier 12, respectively, and the pumping pump 11 is in communication with the reaction chamber 13 to evacuate the air of the reaction chamber 13 and the gas The supplier 12 is supplied to heat the sulfur powder to generate sulfur gas and then to the reaction chamber 13 which is in communication. Moreover, the gas flow dividing member 14 is disposed in the reaction chamber 13, and the gas flow dividing member 14 has a plurality of thin channels 141 which are arranged in a stack and are parallel to each other, and each of the thin channels 141 has a placement groove therein. 142, for placing the copper indium gallium selenide film 2, and in the embodiment, the material of the reaction chamber 13 may be graphite to improve thermal conductivity.

本實施例於實際操作時，先於該等放置槽142內分別放置該等銅銦鎵硒薄膜2，當該反應室13封閉後，即啟動該抽氣幫浦11，以抽取該反應室13內之空氣(步驟S1)，於本實施例中，被抽氣後之該反應室13內的真空度(氣壓)係低於1×10-2托(torr)，以避免原本內部所具有之氣體參與反應而使硫化之效果降低或甚至產生異變。接著，使用者將硫粉放置到坩鍋中並放入該氣體供應器12內加熱，使硫粉蒸發形成硫氣體，所產生出之整團硫氣體便透過連通管輸送至該反應室13內(步驟S2)；習知技術製程通常由此步驟開始進行薄膜硫化的動作，然而實際操作中，由於硫粉蒸發後之硫氣體並未受到導流、整流等處置，因此會形成整團較為紊亂且不穩定之硫氣體，造成薄膜硫化厚度不均的情況。因此本發明使用一氣體分流件14對硫氣體進行導流，當這些紊亂的硫氣體進入該反應室13後，透過該氣體分流件14便能將硫氣體分層，並形成較為穩定之硫氣體(步驟S3)，於此步驟中，前述 之紊亂硫氣體進入該反應室13後，會被該氣體分流件14之該等薄型通道141強制分流為僅能各層內流動之層流硫氣體，因此便會如第3圖所示，左側之紊亂硫氣體經由該氣體分流件14分流並穩定流向後，形成右側之穩定層流的硫氣體，進入各該薄型通道141。此時，各個薄型通道141內之穩定流向的硫氣體對該通道內之銅銦鎵硒薄膜進行硫化反應(步驟S4)，意即已變為穩定之硫氣體再分別對每一該薄型通道141內該放置槽142所放置之該銅銦鎵硒薄膜2進行硫化，更有甚者，並且於進行硫化時透過該反應室13內之加熱器131，提升該反應室13之溫度，以加快硫化製程之速率。透過上述之製程內容與裝置便能達到將大面積之該等銅銦鎵硒薄膜2均勻硫化並增加開路電壓，進而提升光電轉換效率之功效。 In the actual operation, the copper indium gallium selenide film 2 is placed in the placing grooves 142 respectively. When the reaction chamber 13 is closed, the pumping pump 11 is started to extract the reaction chamber 13 In the present air (step S1), in the present embodiment, the degree of vacuum (air pressure) in the reaction chamber 13 after being evacuated is less than 1 × 10 -2 torr (torr) to avoid the original internal The gas participates in the reaction to reduce or even cause a change in the effect of vulcanization. Then, the user places the sulfur powder into the crucible and heats it in the gas supply 12 to evaporate the sulfur powder to form sulfur gas, and the generated sulfur gas is sent to the reaction chamber 13 through the communication tube. (Step S2); the conventional technical process usually starts the film vulcanization operation by this step. However, in actual operation, since the sulfur gas after the sulfur powder is evaporated is not subjected to the flow, rectification, etc., the whole cluster is more disorderly formed. The unstable sulfur gas causes uneven thickness of the film vulcanization. Therefore, the present invention uses a gas splitter 14 to conduct a flow of sulfur gas. When these disordered sulfur gases enter the reaction chamber 13, the sulfur gas can be stratified by the gas splitter 14 to form a relatively stable sulfur gas. (Step S3), in this step, after the turbulent sulfur gas enters the reaction chamber 13, the thin passages 141 of the gas splitter 14 are forcibly split into laminar sulfur gas which can flow only in each layer, so As shown in Fig. 3, the turbulent sulfur gas on the left side is branched and stabilized to flow through the gas splitter 14, and a sulfur gas of a stable laminar flow on the right side is formed to enter each of the thin passages 141. At this time, the sulfur gas in the steady flow direction in each of the thin channels 141 is subjected to a vulcanization reaction on the copper indium gallium selenide film in the channel (step S4), that is, the sulfur gas has become stable and is respectively applied to each of the thin channels 141. The copper indium gallium selenide film 2 placed in the placement groove 142 is vulcanized, and more preferably, and passed through the heater 131 in the reaction chamber 13 during vulcanization to raise the temperature of the reaction chamber 13 to accelerate vulcanization. The rate of the process. Through the above process contents and devices, it is possible to uniformly vulcanize a large area of the copper indium gallium selenide film 2 and increase the open circuit voltage, thereby improving the photoelectric conversion efficiency.

此外，於本實施例中，本發明於該氣體供應器12與該反應室13相互連通之連通管上設有一壓力控制器15，而該反應室13另與連通有氣體鋼瓶17之一氣體流量控制器16相連接，使該壓力控制器15藉由控制硫氣體進入該反應室13之流量，進而調控該反應室13內的氣壓，以便更改硫化製程之變因，而於硫化後得到不同性質之該等銅銦鎵硒薄膜2。其中，該氣體流量控制器16係透過連通氣體鋼瓶17，而通以該氣體鋼瓶17內裝之氮氣或氬氣等不參與該實驗反應的氣體，以藉此調整該反應室13內的氣壓，進而達到改變製程變因之 目的。 In addition, in the present embodiment, the present invention provides a pressure controller 15 on the communication pipe in which the gas supplier 12 and the reaction chamber 13 communicate with each other, and the reaction chamber 13 is further connected to a gas flow of the gas cylinder 17 The controller 16 is connected such that the pressure controller 15 controls the flow rate of the sulfur gas into the reaction chamber 13 to regulate the gas pressure in the reaction chamber 13, so as to change the cause of the vulcanization process, and obtain different properties after vulcanization. The copper indium gallium selenide film 2 is. The gas flow controller 16 is configured to pass through the gas cylinder 17 and pass through a gas such as nitrogen or argon contained in the gas cylinder 17 that does not participate in the experimental reaction, thereby adjusting the gas pressure in the reaction chamber 13. In turn, the purpose of changing the process variation is achieved.

本發明之製程裝置也能應用於硒化製程中，將硫粉改為硒粉，並將放置槽中的銅銦鎵硒薄膜改為銅銦鎵薄膜，讓加熱硒粉後產生的硒氣體同樣藉由上述結構以層流方式進行擴散，提高製成之銅銦鎵硒薄膜的反應均勻性與穩定性，因此具有提升整體元件模組效率、避免使用H2Se有毒氣體做為原料以及穩定製作大面積銅銦鎵硒吸收層等優點。 The process device of the invention can also be applied to the selenization process, changing the sulfur powder into selenium powder, and changing the copper indium gallium selenide film in the trough into a copper indium gallium film, so that the selenium gas generated after heating the selenium powder is also the same The above structure is used to diffuse in a laminar flow manner to improve the reaction uniformity and stability of the fabricated copper indium gallium selenide film, thereby improving the efficiency of the overall component module, avoiding the use of H 2 Se toxic gas as a raw material, and stably producing A large area of copper indium gallium selenide absorption layer and other advantages.

綜上所述，本發明透過該氣體分流件便能夠將原先紊亂之硫氣體重新分流整理，形成分層並穩定之硫氣體，讓硫元素能擴散得較為均勻，使得無論是大面積或是小面積的銅銦鎵硒薄膜皆能夠有均勻硫化之效果，並且亦能提升製程之穩定性。由於製程所使用的原料為硫粉，所以也不會如習知技術一般有毒性物質之處理問題。因此，透過此種硫化裝置得出之該等銅銦鎵硒薄膜便能具有表面鈍化、開路電壓提高和光電轉換效率提升的效果。本發明可應用於多種氣體均佈薄膜製程，具有高運用彈性。 In summary, the gas splitter of the present invention can re-sort the originally disordered sulfur gas to form a layered and stable sulfur gas, so that the sulfur element can be diffused evenly, so that the large area or small The area of the copper indium gallium selenide film can have a uniform vulcanization effect, and can also improve the stability of the process. Since the raw material used in the process is sulfur powder, it is not as problematic as the conventional technology. Therefore, the copper indium gallium selenide thin films obtained by such a vulcanization apparatus can have surface passivation, an increase in open circuit voltage, and an effect of improving photoelectric conversion efficiency. The invention can be applied to a plurality of gas uniform film processes, and has high application flexibility.

上述之實施例僅為例示性說明本發明之特點及其功效，而非用於限制本發明之實質技術內容的範圍。任何熟習此技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修飾與變化。因此，本發明之權利保護範圍，應如後述之申請專利範圍所列。 The above-described embodiments are merely illustrative of the features and functions of the present invention, and are not intended to limit the scope of the technical scope of the present invention. Modifications and variations of the above-described embodiments can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.

Claims (6)

一種銅銦鎵硒薄膜硫化裝置，其包括：一抽氣幫浦；一氣體供應器，其係供以將硫粉加熱產生硫氣體；一反應室，其係分別與該抽氣幫浦與該氣體供應器相互連通；及一氣體分流件，其係設於該反應室內，且該氣體分流件係具有複數薄型通道，該等薄型通道係為堆疊排列且相互平行，每一該薄型通道內係具有一放置槽，以供放置該銅銦鎵硒薄膜。  A copper indium gallium selenide thin film vulcanizing device, comprising: a pumping pump; a gas supply device for heating sulfur powder to generate sulfur gas; a reaction chamber, respectively, and the pumping pump The gas supply device is connected to each other; and a gas flow dividing member is disposed in the reaction chamber, and the gas flow dividing member has a plurality of thin channels arranged in a stack and parallel to each other, and each of the thin channels is There is a placement slot for the copper indium gallium selenide film to be placed.   如請求項1所述之銅銦鎵硒薄膜硫化裝置，其中，當該等放置槽放置有該等銅銦鎵硒薄膜並將反應室封閉時，該抽氣幫浦係抽取該反應室之空氣，使內部氣壓低於1×10 -2托(torr)，再將事先放置於該氣體供應器內之硫粉加熱形成硫氣體，並將其輸送至該反應室，使剛進入該反應室之紊亂硫氣體透過該氣體分流件之該等薄型通道轉換成層流硫氣體後，對該等銅銦鎵硒薄膜進行硫化反應。 The copper indium gallium selenide thin film vulcanizing apparatus according to claim 1, wherein the air pumping chamber extracts air of the reaction chamber when the copper indium gallium selenide film is placed in the placing tank and the reaction chamber is closed. , the internal air pressure is lower than 1 × 10 -2 torr, and the sulfur powder previously placed in the gas supply is heated to form a sulfur gas, and is sent to the reaction chamber so that it just enters the reaction chamber. After the turbulent sulfur gas is converted into laminar sulfur gas through the thin channels of the gas shunt, the copper indium gallium selenide film is subjected to a vulcanization reaction. 如請求項2所述之銅銦鎵硒薄膜硫化裝置，其中，該反應室與該氣體供應器之間係具有一壓力控制器，以控制硫氣體進入該反應室之氣壓。  The copper indium gallium selenide thin film vulcanization apparatus according to claim 2, wherein a pressure controller is disposed between the reaction chamber and the gas supply to control the gas pressure of the sulfur gas entering the reaction chamber.   如請求項3所述之銅銦鎵硒薄膜硫化裝置，更具有一氣體流量控制器，其係與該反應室連通，以供向該反應室通以 不參與反應之氣體。  The copper indium gallium selenide thin film vulcanizing apparatus according to claim 3, further comprising a gas flow controller in communication with the reaction chamber for supplying a gas which does not participate in the reaction to the reaction chamber.   如請求項1所述之銅銦鎵硒薄膜硫化裝置，其中，該氣體分流件之材質係為石墨。  The copper indium gallium selenide thin film vulcanizing device according to claim 1, wherein the gas shunt member is made of graphite.   如請求項1所述之銅銦鎵硒薄膜硫化裝置，其中，該反應室之材質係為石墨。  The copper indium gallium selenide thin film vulcanizing apparatus according to claim 1, wherein the material of the reaction chamber is graphite.  
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