TW201805990A - Plasma processing apparatus - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
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Abstract
Description
本發明係關於一種電漿CVD(Chemical Vapor Deposition；化學氣相沉積)裝置等電漿處理裝置。 The invention relates to a plasma processing device such as a plasma CVD (Chemical Vapor Deposition) device.
一般而言，電漿CVD裝置藉由於高頻電極(陰極)與載台(stage)(陽極)之間之成膜空間(反應室)產生成膜氣體之電漿，而使反應生成物堆積於載台上之基板。於載台之周圍設置有與真空腔室電性連接之複數個接地構件。這些接地構件係形成使高頻電流自載台經由真空腔室而向電源回流之回流電流路徑。 Generally, a plasma CVD apparatus generates a plasma of a film-forming gas by a film-forming gas (reaction chamber) between a high-frequency electrode (cathode) and a stage (anode), so that reaction products are deposited on Substrate on the stage. A plurality of grounding members electrically connected to the vacuum chamber are provided around the carrier. These grounding members form a return current path for returning high-frequency current from the stage to the power source through the vacuum chamber.
此處，若回流電流路徑未得以最佳化，則有時會在陰極、陽極間以外之部位產生意外的放電。例如，若回流電流路徑非等向性地偏稀疏或偏密實地形成，則回流電流會集中於密實之路徑，而產生成膜空間以外之路徑附近處之電場分佈、電場梯度。藉此存在產生局部放電而膜厚等之面內均勻性降低之情況。 Here, if the return current path is not optimized, an accidental discharge may occur in a place other than between the cathode and the anode. For example, if the return current path is formed sparsely or densely anisotropically, the return current will be concentrated on the dense path, resulting in an electric field distribution and electric field gradient near the path outside the film formation space. Thereby, a partial discharge may occur, and the in-plane uniformity, such as a film thickness, may fall.
因此，既存之電漿CVD裝置中實施有如下對策：縮短各接地構件之長度而將回流電流路徑之電阻抑制得較小、減小構件彼此之接觸電阻、使回流電流路徑空間上不會偏向一方、使電場強度分佈最佳化從而不會形成不必要之電場梯度等。 Therefore, in the existing plasma CVD apparatus, the following countermeasures have been implemented: shortening the length of each ground member to suppress the resistance of the return current path to be small, reducing the contact resistance between members, and preventing the return current path from being spaced to one 2. Optimize the electric field intensity distribution so that unnecessary electric field gradients are not formed.
另一方面，於腔室之一部分側壁設置有開口部，該開口部係用以將基板向真空腔室內搬入或向真空腔室外搬出。開口部之側壁外表面側藉由門閥而開閉，開口部之側壁內面側通常一直開放。經由形成有這種開口部之側壁部的回流電流路徑係必需繞過開口部之周圍、或通過開口部之內部之門閥。因此，經由形成有該開口部之側壁部之回流電流路徑係電流路徑較經由其他側壁部之回流電流路徑長，而成為產生不必要之電場分佈、電場梯度之原因。 On the other hand, an opening is provided on a part of the side wall of the chamber, and the opening is used to carry the substrate into or out of the vacuum chamber. The outer surface side of the side wall of the opening portion is opened and closed by a gate valve, and the inner surface side of the side wall of the opening portion is always open at all times. The return current path through the side wall portion where such an opening portion is formed must be a gate valve that bypasses the periphery of the opening portion or passes through the inside of the opening portion. Therefore, the reflow current path through the side wall portion where the opening portion is formed is longer than the reflow current path through the other side wall portion, and causes unnecessary electric field distribution and electric field gradient.
為了解決上述問題，例如於專利文獻1中揭示了一種電漿處理裝置，係將第二門閥作為回流電流路徑之一部分而構成，該第二門閥係自腔室之內側使形成於腔室之側壁之基板搬入搬出部開閉。而且，專利文獻2中揭示了一種電漿處理系統，係使設置於基板支撐件之周圍之複數個接觸構件與基板支撐件一起上升，且與設置於基板搬送埠之上部之複數個板分別接觸，藉此構成回流電流路徑。 In order to solve the above-mentioned problem, for example, Patent Document 1 discloses a plasma processing apparatus configured by using a second gate valve as a part of a return current path, and the second gate valve is formed on the side wall of the chamber from the inside The substrate carrying-in and carrying-out section is opened and closed. Furthermore, Patent Document 2 discloses a plasma processing system that raises a plurality of contact members provided around the substrate support together with the substrate support, and makes contact with a plurality of plates provided above the substrate transfer port, respectively. This constitutes a return current path.
專利文獻1：WO2010/079756號公報。 Patent Document 1: WO2010 / 079756.
專利文獻2：日本特許第5883652號公報。 Patent Document 2: Japanese Patent No. 5863652.
然而在專利文獻1中，因自加熱器(載台)之外周緣延伸出之接地板一開始便連接於真空腔室之底部，故存在回流電流路徑變長之問題。而且，在專利文獻2中，因為是與基板支撐件(載台)之上升聯動地將各接觸構件連接於各板之構成，故例如於載台較大之情形時，難以使各接觸構件以均等之按壓力接觸各板，從而無法實現回流電流路徑的均勻化或對稱性的確保。 However, in Patent Document 1, since the ground plate extending from the outer periphery of the heater (stage) is connected to the bottom of the vacuum chamber from the beginning, there is a problem that the return current path becomes long. Further, in Patent Document 2, since each contact member is connected to each plate in association with the raising of the substrate support (stage), it is difficult to make each contact member to be large when the stage is large, for example. Contacting the plates with equal pressing force makes it impossible to achieve uniformity or symmetry of the return current path.
鑒於以上情況，本發明之目的在於提供一種可實現回流電流路徑的縮短化與對稱性的確保之電漿處理裝置。 In view of the foregoing, an object of the present invention is to provide a plasma processing apparatus capable of shortening a return current path and ensuring symmetry.
為了達成上述目的，本發明之一形態之電漿處理裝置包含有腔室本體、載台、高頻電極、複數個接地構件以及可動單元。 In order to achieve the above object, a plasma processing apparatus according to an aspect of the present invention includes a chamber body, a stage, a high-frequency electrode, a plurality of grounding members, and a movable unit.
上述腔室本體具有於一部分包含有能夠供基板通過的開口部之側壁。 The chamber body has a side wall including an opening portion through which a substrate can pass.
上述載台具有能夠支持上述基板之支持面，且設置於上述腔室本體之內部。 The stage has a supporting surface capable of supporting the substrate, and is disposed inside the chamber body.
上述高頻電極係與上述支持面對向配置，且構成為能夠產生製程氣體之電漿。 The high-frequency electrode is arranged facing the support, and is configured as a plasma capable of generating a process gas.
上述複數個接地構件配置於上述載台之周圍，將上述側壁與上述載台之間電性連接。 The plurality of grounding members are arranged around the carrier and electrically connect the side wall and the carrier.
上述可動單元具有支持體，該支持體係用以支持作為上述複數個接地構件之一部分的第一接地構件。上述可動單元能夠構成為於第一位置與第二位置之間使上述支持體於與上述支持面正交之軸方向移動，上述第一位置係上述第一接地構件隔著上述開口部而與上述開口部之內周面對向之位置，上述第二位置係上述第一接地構件與上述內周面電性連接之位置。 The movable unit has a support body, and the support system is used to support the first grounding member as a part of the plurality of grounding members. The movable unit may be configured to move the support body in an axial direction orthogonal to the support surface between the first position and the second position, and the first position is the first ground member interposed with the above through the opening portion. The position where the inner peripheral surface of the opening faces, and the second position is a position where the first ground member is electrically connected to the inner peripheral surface.
上述電漿處理裝置中，複數個接地構件連接於載台之周圍與腔室本體之側壁(周壁)之間。因此，與將接地構件連接於載台與腔室本體之底部之構成相比，可縮短回流電流路徑。 In the above plasma processing apparatus, a plurality of grounding members are connected between the periphery of the stage and the side wall (peripheral wall) of the chamber body. Therefore, compared with the configuration in which the ground member is connected to the stage and the bottom of the chamber body, the return current path can be shortened.
另一方面，於腔室本體之側壁之一部分設置有用於基板之搬入搬出之開口部。連接於形成有該開口部之側壁部的接地構件(第一接地構件)係由能夠在開口部之內部於上述軸方向移動之支持體支持。支持體係於基板通過開口部時於第一位置待機，於產生電漿時移動至第二位置而將 第一接地構件電性連接於開口部之內周面。藉此，構築無須繞過開口部之回流電流路徑，因而可於側壁部之全周確保回流電流路徑的對稱性。 On the other hand, an opening for loading and unloading the substrate is provided on a part of the side wall of the chamber body. The grounding member (first grounding member) connected to the side wall portion where the opening portion is formed is supported by a support capable of moving in the axial direction inside the opening portion. The support system stands by in the first position when the substrate passes through the opening, and moves to the second position when the plasma is generated. The first grounding member is electrically connected to an inner peripheral surface of the opening. Thereby, a reflow current path that does not need to bypass the opening is constructed, so that the symmetry of the reflow current path can be ensured throughout the entire circumference of the side wall portion.
上述支持體亦可具有於上述第二位置處抵接於上述內周面之導電性的抵接部，上述抵接部構成為能夠於上述軸方向彈性變形。 The support may have a conductive contact portion that abuts the inner peripheral surface at the second position, and the contact portion is configured to be elastically deformable in the axial direction.
藉此，確保支持體與開口部內周面之間之穩定的電性連接。 This ensures a stable electrical connection between the support and the inner peripheral surface of the opening.
該情形時，上述支持體亦可進一步具有配置於上述抵接部之周圍之密封環。上述密封環係於上述第二位置處與上述內周面彈性接觸。 In this case, the support may further include a seal ring arranged around the abutting portion. The seal ring is in elastic contact with the inner peripheral surface at the second position.
藉此，可避免導入至腔室本體內之製程氣體及其反應生成物與抵接部接觸，因而抵接部之耐久性提高。 Thereby, the process gas and its reaction product introduced into the chamber body can be prevented from contacting the contact portion, and the durability of the contact portion is improved.
上述支持體亦可由金屬製之塊所構成。 The support may be made of a metal block.
藉此，可將第一接地構件經由支持體電性連接於腔室本體之側壁。 Thereby, the first grounding member can be electrically connected to the side wall of the chamber body via the support.
典型而言，上述第二位置係設定為與作為上述複數個接地構件之其他部分的第二接地構件中之與上述側壁之連接位置處的自上述腔室本體之底部算起之高度實質相同之高度。 Typically, the second position is set to be substantially the same as the height from the bottom of the chamber body at the connection position with the side wall in the second ground member that is the other part of the plurality of ground members height.
藉此，可確保回流電流路徑的對稱性。 This ensures the symmetry of the return current path.
上述載台亦可構成為能夠沿著上述軸方向移動。該情形時，上述複數個接地構件由複數個可撓性金屬板所構成，該可撓性金屬板分別具有連接於上述側壁之第一端部及連接於上述載台之第二端部。 The stage may be configured to be movable in the axial direction. In this case, the plurality of grounding members are composed of a plurality of flexible metal plates, each of which has a first end portion connected to the side wall and a second end portion connected to the carrier.
上述支持體亦可具有沿著上述開口部之長度方向延伸之長方體形狀，上述第一接地構件包含有隔開間隔排列於上述長度方向之複數個導體部。 The support body may have a rectangular parallelepiped shape extending along the length direction of the opening portion, and the first grounding member includes a plurality of conductor portions arranged at intervals in the length direction.
藉此，即便於開口部相對寬幅之情形時，亦可確保適當之回流電流路徑。 Accordingly, even when the opening portion is relatively wide, an appropriate return current path can be ensured.
而且，為了達成上述目的，本發明之一形態之電漿處理裝置包含有腔室本體、載台、高頻電極、複數個接地構件、可動單元以及收集構件。 In order to achieve the above object, a plasma processing apparatus according to an aspect of the present invention includes a chamber body, a stage, a high-frequency electrode, a plurality of grounding members, a movable unit, and a collecting member.
上述腔室本體具有側壁，上述側壁係於一部分包含有開口部，該開口部能夠供基板通過且具有第一內周面以及與上述第一內周面對向之第二內周面。 The chamber body has a side wall, and the side wall includes an opening at a part, the opening can pass through the substrate, and has a first inner peripheral surface and a second inner peripheral surface facing the first inner peripheral surface.
上述載台具有能夠支持上述基板之支持面，且設置於上述腔室本體之內部。 The stage has a supporting surface capable of supporting the substrate, and is disposed inside the chamber body.
上述高頻電極係與上述支持面對向配置，且構成為能夠產生製程氣體之電漿。 The high-frequency electrode is arranged facing the support, and is configured as a plasma capable of generating a process gas.
上述複數個接地構件配置於上述載台之周圍，將上述 側壁與上述載台之間電性連接。 The plurality of grounding members are arranged around the carrier, and The side wall is electrically connected to the carrier.
上述可動單元具有支持體，該支持體係用以支持作為上述複數個接地構件之一部分的第一接地構件。上述可動單元構成為能夠使上述支持體於第一位置與第二位置之間移動，上述第一位置係上述支持體與和上述第一內周面相連之上述側壁之第一內壁對向之位置，上述第二位置係上述支持體與和上述第二內周面相連之上述側壁之第二內壁電性連接之位置。 The movable unit has a support body, and the support system is used to support the first grounding member as a part of the plurality of grounding members. The movable unit is configured to move the support between a first position and a second position, where the first position is opposite the first inner wall of the support and the side wall connected to the first inner peripheral surface. The position, the second position is a position where the support is electrically connected to the second inner wall of the side wall connected to the second inner peripheral surface.
上述收集構件係配置於上述支持體與上述第二內壁相接之部分之正下方。 The collection member is disposed directly below a portion where the support body is in contact with the second inner wall.
上述電漿處理裝置中，複數個接地構件連接於載台之周圍與腔室本體之側壁(周壁)之間。因此，與將接地構件連接於載台與腔室本體之底部之構成相比，可縮短回流電流路徑。 In the above plasma processing apparatus, a plurality of grounding members are connected between the periphery of the stage and the side wall (peripheral wall) of the chamber body. Therefore, compared with the configuration in which the ground member is connected to the stage and the bottom of the chamber body, the return current path can be shortened.
另一方面，於腔室本體之側壁之一部分設置用於基板之搬入搬出之開口部。連接於形成有該開口部之側壁部之接地構件(第一接地構件)係由能夠於第一位置與第二位置之間移動之支持體支持，上述第一位置係與和第一內周面相連之側壁之第一內壁對向之位置，上述第二位置係與和第二內周面相連之上述側壁之第二內壁電性連接之位置。支持體係於基板通過開口部時待機於第一位置，於產生電漿時移動至第二位置而將第一接地構件電性連接於 開口部之內周面。藉此，因構築無須繞過開口部之回流電流路徑，故於側壁部之全周可確保回流電流路徑的對稱性。 On the other hand, an opening for loading and unloading the substrate is provided on a part of the side wall of the chamber body. The grounding member (first grounding member) connected to the side wall portion where the opening portion is formed is supported by a support capable of moving between a first position and a second position. The first position is a first inner peripheral surface. A position where the first inner wall of the connected side walls is opposite, and the second position is a position electrically connected to the second inner wall of the side wall connected to the second inner peripheral surface. The support system stands by at the first position when the substrate passes through the opening, moves to the second position when the plasma is generated, and electrically connects the first ground member to The inner peripheral surface of the opening. Thereby, since a reflow current path is not required to bypass the opening, the symmetry of the reflow current path can be ensured over the entire circumference of the side wall portion.
再者，於支持體與第二內壁相接之部分之正下方配置有收集構件。藉此，即便支持體與第二內壁相接而發塵，收集構件亦可收集灰塵。 Furthermore, a collecting member is arranged immediately below a portion where the support body contacts the second inner wall. Thereby, even if the support body comes into contact with the second inner wall to generate dust, the collecting member can collect dust.
上述可動單元亦可包含有：第一驅動部，使上述支持體於和上述第二內壁對向之第三位置與上述第一位置之間移動；及第二驅動部，使上述支持體於上述第三位置與上述第二位置之間移動。 The movable unit may further include: a first driving portion that moves the support between a third position facing the second inner wall and the first position; and a second driving portion that causes the support to Move between the third position and the second position.
藉此，支持體於第一位置與第二位置之間移動時，會經由與第二位置隔開之第三位置。其結果，收集構件不與支持體接觸，從而不會引起由收集構件與支持體之接觸所引起之發塵。 Thereby, when the support is moved between the first position and the second position, the support body passes through a third position separated from the second position. As a result, the collection member does not come into contact with the support body, so that dust generation caused by the contact between the collection member and the support body is not caused.
亦可於上述側壁之內壁形成有與上述開口部連通之凹部，上述第一內壁及上述第二內壁係上述凹部之底部之一部分。 A recessed portion communicating with the opening may be formed on an inner wall of the side wall, and the first inner wall and the second inner wall may be part of a bottom portion of the recessed portion.
藉此，可將支持體收納於設置在側壁之凹部中，從而可確保支持體與載台之間之空間。 Thereby, the support body can be accommodated in the recessed portion provided on the side wall, and the space between the support body and the stage can be ensured.
如以上所述，根據本發明，可實現回流電流路徑的縮短化與對稱性的確保。藉此，可抑制產生意外之局部放電。 As described above, according to the present invention, it is possible to shorten the return current path and ensure the symmetry. Thereby, occurrence of an accidental partial discharge can be suppressed.
10‧‧‧真空腔室 10‧‧‧Vacuum chamber
11‧‧‧成膜室 11‧‧‧Film forming room
12‧‧‧腔室本體 12‧‧‧ chamber body
13、30‧‧‧高頻電極 13, 30‧‧‧ high frequency electrode
14‧‧‧絕緣構件 14‧‧‧ Insulating member
15‧‧‧遮蔽蓋 15‧‧‧shield cover
20‧‧‧載台 20‧‧‧ carrier
21、711、811‧‧‧支持面 21,711,811‧‧‧Support
22‧‧‧升降軸 22‧‧‧ Lifting shaft
23、72、85a、86a‧‧‧驅動源 23, 72, 85a, 86a‧‧‧ drive source
31‧‧‧電極凸緣 31‧‧‧electrode flange
32‧‧‧簇射板 32‧‧‧ shower plate
41‧‧‧匹配箱 41‧‧‧ matching box
42‧‧‧高頻電源 42‧‧‧High Frequency Power
43‧‧‧氣體導入管線 43‧‧‧Gas introduction pipeline
51‧‧‧門閥 51‧‧‧Gate Valve
60‧‧‧接地構件 60‧‧‧ grounding member
61‧‧‧第一接地板 61‧‧‧The first ground plate
62‧‧‧第二接地板 62‧‧‧Second ground plate
70、80‧‧‧可動單元 70, 80‧‧‧ mobile units
71、81、171、271‧‧‧支持體 71, 81, 171, 271‧‧‧ support
71A、81A‧‧‧抵接部 71A, 81A‧‧‧Abutting Department
73、85b、86b‧‧‧驅動軸 73, 85b, 86b‧‧‧Drive shaft
83‧‧‧支持棒 83‧‧‧ support stick
84‧‧‧管體 84‧‧‧ tube body
85‧‧‧第一驅動部 85‧‧‧first drive unit
86‧‧‧第二驅動部 86‧‧‧Second driving unit
87‧‧‧臂 87‧‧‧arm
87a、87b‧‧‧臂部 87a, 87b‧‧‧arm
88a、89a‧‧‧固定構件 88a, 89a‧‧‧Fixed members
88b、89b‧‧‧軸部 88b, 89b‧‧‧Shaft
90‧‧‧控制器 90‧‧‧ Controller
100‧‧‧電漿處理裝置 100‧‧‧ Plasma treatment device
121‧‧‧底部 121‧‧‧ bottom
122‧‧‧側壁 122‧‧‧ sidewall
122a、122b、122c、122d‧‧‧側壁部 122a, 122b, 122c, 122d
123、124‧‧‧開口部 123, 124‧‧‧ opening
123a‧‧‧下部內周面 123a‧‧‧ lower inner peripheral surface
123b‧‧‧上部內周面 123b‧‧‧ Upper inner peripheral surface
125‧‧‧內壁 125‧‧‧ inner wall
125a‧‧‧下部內壁 125a‧‧‧ lower inner wall
125b‧‧‧上部內壁 125b‧‧‧ Upper inner wall
125c、127c‧‧‧凹部 125c, 127c ‧‧‧ recess
127‧‧‧收集構件 127‧‧‧Collecting components
127a‧‧‧收集面 127a‧‧‧ collection noodles
311‧‧‧空間部 311‧‧‧Ministry of Space
600‧‧‧可撓性金屬板 600‧‧‧ flexible metal plate
601、602‧‧‧端部 601, 602‧‧‧ end
710、810‧‧‧金屬塊 710, 810‧‧‧ metal block
712、812‧‧‧對向面 712, 812‧‧‧ opposite
713、813‧‧‧彈性構件 713, 813‧‧‧ Elastic members
714、814‧‧‧導電性片材 714, 814‧‧‧ conductive sheet
715、815‧‧‧密封環 715, 815‧‧‧seal ring
P‧‧‧電漿 P‧‧‧ Plasma
W‧‧‧基板 W‧‧‧ substrate
V‧‧‧退避部 V‧‧‧Retreat
X、Y、Z‧‧‧軸 X, Y, Z‧‧‧ axis
圖1係表示本發明之一實施形態之電漿處理裝置之概略側剖視圖。 FIG. 1 is a schematic side sectional view showing a plasma processing apparatus according to an embodiment of the present invention.
圖2係表示上述電漿處理裝置中之基板搬入搬出步驟之概略側剖視圖。 FIG. 2 is a schematic side cross-sectional view showing a substrate carrying-in and carrying-out process in the plasma processing apparatus.
圖3係表示上述電漿處理裝置之主要部分之內部平面構造之概略剖視圖。 FIG. 3 is a schematic cross-sectional view showing an internal planar structure of a main part of the plasma processing apparatus.
圖4係表示上述電漿處理裝置中之接地構件之一構成例之示意圖。 FIG. 4 is a schematic diagram showing a configuration example of a grounding member in the plasma processing apparatus.
圖5係上述電漿處理裝置中之支持體之部分斷裂立體圖。 FIG. 5 is a partially broken perspective view of the support in the above plasma processing apparatus.
圖6係表示上述支持體與腔室本體的開口部之關係之主要部分之概略剖視圖。 FIG. 6 is a schematic cross-sectional view of a main part showing a relationship between the support and the opening of the chamber body.
圖7係說明上述電漿處理裝置中之成膜時(產生電漿時)之電流路徑之概略圖。 FIG. 7 is a schematic diagram illustrating a current path during film formation (when plasma is generated) in the plasma processing apparatus.
圖8係說明比較例之電漿處理裝置之電流路徑之概略圖。 Fig. 8 is a schematic diagram illustrating a current path of a plasma processing apparatus of a comparative example.
圖9係表示上述支持體之構成之變形例之概略立體圖。 FIG. 9 is a schematic perspective view showing a modified example of the structure of the support.
圖10係表示上述電漿處理裝置中之驅動支持體之驅動系統之變形例之概略剖視圖。 FIG. 10 is a schematic cross-sectional view showing a modified example of a drive system of a drive support in the plasma processing apparatus.
圖11係表示上述電漿處理裝置中之驅動支持體之驅動系統之變形例之概略剖視圖。 FIG. 11 is a schematic cross-sectional view showing a modified example of a drive system of a drive support in the plasma processing apparatus.
圖12係表示上述電漿處理裝置中之驅動支持體之驅動系統之變形例之概略剖視圖。 FIG. 12 is a schematic cross-sectional view showing a modified example of a drive system of a drive support in the plasma processing apparatus.
圖13係上述驅動系統之變形例中使用之支持體之部分斷裂立體圖。 FIG. 13 is a partially broken perspective view of a support used in a modification of the drive system.
圖14係上述收集構件之部分斷裂立體圖。 Fig. 14 is a partially broken perspective view of the collecting member.
圖15係上述收集構件之變形例之部分斷裂立體圖。 Fig. 15 is a partially broken perspective view of a modification of the above-mentioned collecting member.
圖16係表示具備上述變形例之驅動系統之電漿處理裝置之變形例之概略剖視圖。 FIG. 16 is a schematic cross-sectional view showing a modification of the plasma processing apparatus provided with the drive system of the modification.
圖17係表示具備上述變形例之驅動系統之電漿處理裝置之變形例之概略剖視圖。 FIG. 17 is a schematic cross-sectional view showing a modification of the plasma processing apparatus provided with the drive system of the modification.
圖18係表示具備上述變形例之驅動系統之電漿處理裝置之變形例之概略剖視圖。 FIG. 18 is a schematic cross-sectional view showing a modification of the plasma processing apparatus provided with the drive system of the modification.
以下，一邊參照圖式一邊對本發明之實施形態進行說明。本實施形態中，作為電漿處理裝置，列舉電漿CVD裝置為例進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In this embodiment, a plasma CVD apparatus will be described as an example of a plasma processing apparatus.
圖1及圖2係表示本實施形態之電漿CVD裝置之構成之概略側剖視圖，圖1表示成膜時，圖2表示基板搬入搬出時。 1 and 2 are schematic side cross-sectional views showing the configuration of a plasma CVD apparatus according to this embodiment. FIG. 1 shows a film formation, and FIG. 2 shows a substrate loading and unloading.
另外，各圖中X軸、Y軸以及Z軸表示相互正交之3 軸方向，X軸以及Y軸相當於水平方向，Z軸相當於高度方向。 In addition, the X-axis, Y-axis, and Z-axis in each figure represent 3 orthogonal to each other. The axis direction, the X axis and the Y axis correspond to a horizontal direction, and the Z axis corresponds to a height direction.
電漿CVD裝置100具有真空腔室10。真空腔室10於內部具有成膜室11。真空腔室10連接於未圖示之真空泵，且構成為能夠將成膜室11排氣至預定之減壓氛圍並加以維持。 The plasma CVD apparatus 100 includes a vacuum chamber 10. The vacuum chamber 10 has a film formation chamber 11 inside. The vacuum chamber 10 is connected to a vacuum pump (not shown), and is configured to be able to exhaust and maintain the film formation chamber 11 to a predetermined reduced-pressure atmosphere.
真空腔室10具有腔室本體12、高頻電極13以及絕緣構件14。 The vacuum chamber 10 includes a chamber body 12, a high-frequency electrode 13, and an insulating member 14.
腔室本體12由不鏽鋼或鋁合金等金屬材料所構成。腔室本體12形成為長方體形狀，該長方體形狀具有底部121以及由立設於底部121之周圍之4個側壁部所構成的側壁(周壁)122。 The chamber body 12 is made of a metallic material such as stainless steel or aluminum alloy. The chamber body 12 is formed in a rectangular parallelepiped shape having a bottom portion 121 and a side wall (peripheral wall) 122 composed of four side wall portions standing around the bottom portion 121.
側壁122具有側壁部122a，該側壁部122a係於一部分包含有X軸方向能夠供基板W通過之開口部123。開口部123作為用以向成膜室11搬入基板W或自成膜室11搬出基板W之搬入搬出口而構成。開口部123具有能夠供基板及未圖示之基板搬送裝置通過之寬度及高度。於側壁部122a之外側設置有能夠使開口部123開閉之門閥51。 The side wall 122 has a side wall portion 122 a which partially includes an opening 123 through which the substrate W can pass in the X-axis direction. The opening portion 123 is configured as a carry-in / out port for carrying the substrate W into or from the film forming chamber 11. The opening 123 has a width and a height through which a substrate and a substrate transfer device (not shown) can pass. A gate valve 51 capable of opening and closing the opening portion 123 is provided outside the side wall portion 122a.
作為基板W，典型而言係使用矩形之玻璃基板。基板W之尺寸並無特別限定，例如使用G5以上(1邊之長度為1000mm以上)之基板，本實施形態中，使用例如G6基板(1850mm×1500mm)。 As the substrate W, a rectangular glass substrate is typically used. The size of the substrate W is not particularly limited. For example, a substrate of G5 or larger (the length of one side is 1000 mm or more) is used. In this embodiment, for example, a G6 substrate (1850 mm × 1500 mm) is used.
於腔室本體12之內部設置有載台20。載台20具有支持基板W之支持面21。支持面21由面積比基板W還大之矩形之平面所構成。載台20內置有能夠將支持面21之整個區域加熱至預定溫度之加熱源。加熱源並無特別限定，典型而言，由加熱器、熱介質循環通路等所構成。載台20具有靜電夾具或機械夾具等於支持面21上保持基板W之適宜之夾持機構(圖示省略)。 A stage 20 is provided inside the chamber body 12. The stage 20 has a support surface 21 that supports the substrate W. The support surface 21 is formed by a rectangular plane having an area larger than that of the substrate W. The stage 20 has a built-in heating source capable of heating the entire area of the support surface 21 to a predetermined temperature. The heating source is not particularly limited, but typically includes a heater, a heat medium circulation path, and the like. The stage 20 has a suitable clamping mechanism (not shown) for holding the substrate W on the support surface 21 with an electrostatic jig or a mechanical jig.
載台20具有升降軸22，且構成為藉由設置於腔室本體12之底部121的外側之驅動源23而能夠於Z軸方向進行升降移動。升降軸22固定於載台20之底部中心，氣密地貫通腔室本體12之底部121。載台20構成為能夠於圖1所示之上升位置與圖2所示之下降位置之間升降。載台20之升降動作藉由控制器90而控制。 The stage 20 includes a lifting shaft 22 and is configured to be movable in the Z-axis direction by a driving source 23 provided outside the bottom 121 of the chamber body 12. The lifting shaft 22 is fixed at the center of the bottom of the stage 20 and hermetically penetrates the bottom 121 of the chamber body 12. The stage 20 is configured to be movable between a raised position shown in FIG. 1 and a lowered position shown in FIG. 2. The lifting operation of the stage 20 is controlled by the controller 90.
高頻電極13以與載台20之支持面21於Z軸方向隔開預定之間隔而對向的方式，經由絕緣構件14(不與腔室本體12電性連接之狀態下)而設置於腔室本體12之上部。高頻電極13係由金屬材料所構成，具有電極凸緣31 以及簇射板(shower plate)32。 The high-frequency electrode 13 is provided in the cavity so as to face the support surface 21 of the stage 20 at a predetermined interval in the Z-axis direction through an insulating member 14 (in a state where it is not electrically connected to the chamber body 12). Upper part of the chamber body 12. The high-frequency electrode 13 is made of a metal material and has an electrode flange 31 And shower plate 32.
電極凸緣31經由匹配箱41而與高頻電源42電性連接。電極凸緣31係與氣體供給管線43連接並且具有被導入經由該氣體供給管線43供給之製程氣體(成膜氣體)之空間部311。簇射板32係固定於電極凸緣31之下端部，具有將導入至空間部311之製程氣體供給至載台20上之基板W之整個區域的複數個孔。高頻電極13係藉由自高頻電源42施加高頻電壓，而使簇射板32與載台20之間之成膜室11產生製程氣體之電漿P(參照圖1)。 The electrode flange 31 is electrically connected to the high-frequency power source 42 through the matching box 41. The electrode flange 31 is connected to the gas supply line 43 and has a space portion 311 into which a process gas (film-forming gas) supplied through the gas supply line 43 is introduced. The shower plate 32 is fixed to the lower end of the electrode flange 31 and has a plurality of holes for supplying the process gas introduced into the space portion 311 to the entire area of the substrate W on the stage 20. The high-frequency electrode 13 applies a high-frequency voltage from a high-frequency power source 42 to generate a plasma P for a process gas in the film forming chamber 11 between the shower plate 32 and the stage 20 (see FIG. 1).
高頻電源42之頻率並無特別限定，例如於10MHz至100MHz之間適當地加以選擇，本實施形態中為27.12MHz。 The frequency of the high-frequency power source 42 is not particularly limited, and is appropriately selected between, for example, 10 MHz and 100 MHz. In this embodiment, it is 27.12 MHz.
製程氣體之種類並無特別限定，能夠根據應成膜之材料之種類適當地進行設定。製程氣體除了包含有原料氣體外，亦可包含有氦、氬、氮等載體氣體(carrier gas)。本實施形態中，電漿CVD裝置100係將非晶矽、氮化矽、氧化矽等矽化合物之薄膜成膜於基板W上。 The type of the process gas is not particularly limited, and can be appropriately set according to the type of the material to be formed into a film. The process gas may include a carrier gas such as helium, argon, and nitrogen in addition to the source gas. In this embodiment, the plasma CVD apparatus 100 is formed on the substrate W by a thin film of a silicon compound such as amorphous silicon, silicon nitride, or silicon oxide.
絕緣構件14係配置於腔室本體12與高頻電極13之間。絕緣構件14係由能夠支持高頻電極13(電極凸緣31)之下端周緣部而形成為環狀之陶瓷等電氣絕緣性材料所構成。絕緣構件14經由未圖示之密封環等密封構件而分 別固定於腔室本體12及高頻電極13。 The insulating member 14 is disposed between the chamber body 12 and the high-frequency electrode 13. The insulating member 14 is formed of an electrically insulating material such as ceramics that can support the peripheral edge portion of the lower end of the high-frequency electrode 13 (electrode flange 31) and is formed in a ring shape. The insulating member 14 is divided by a sealing member such as a sealing ring (not shown). Do not fix it to the chamber body 12 or the high-frequency electrode 13.
高頻電極13係被遮蔽蓋(shield cover)15被覆。遮蔽蓋15係配置於腔室本體12之上部，且與電極凸緣31非接觸地被覆高頻電極13。遮蔽蓋15與電極凸緣31之間維持為大氣壓。遮蔽蓋15係由金屬材料所構成，電性連接於腔室本體12及接地電位。 The high-frequency electrode 13 is covered with a shield cover 15. The shielding cover 15 is arranged on the upper part of the chamber body 12 and covers the high-frequency electrode 13 in a non-contact manner with the electrode flange 31. The atmospheric pressure is maintained between the shielding cover 15 and the electrode flange 31. The shielding cover 15 is made of a metal material, and is electrically connected to the chamber body 12 and a ground potential.
本實施形態之電漿處理裝置100進一步具有複數個接地構件60。複數個接地構件60係配置於載台20之周圍，將真空腔室10之側壁122與載台20之間電性連接。 The plasma processing apparatus 100 according to this embodiment further includes a plurality of grounding members 60. The plurality of grounding members 60 are arranged around the stage 20 and electrically connect the side wall 122 of the vacuum chamber 10 and the stage 20.
圖3係表示腔室本體12之內部平面構造之概略剖視圖。如該圖所示，複數個接地構件60包含有複數個第一接地板61以及複數個第二接地板62。 FIG. 3 is a schematic cross-sectional view showing the internal planar structure of the chamber body 12. As shown in the figure, the plurality of ground members 60 include a plurality of first ground plates 61 and a plurality of second ground plates 62.
第一接地板61(第一接地構件)配置於具有開口部123之側壁部122a以及與該側壁部122a對向之載台20之一周緣部之間。第二接地板62(第二接地構件)分別配置於側壁部122a以外之其他3個側壁部122b、122c、122d及與這些側壁部對向之載台20之其他周緣部之間。接地板61、62沿著載台20之各邊大致等間隔地配置。 The first ground plate 61 (first ground member) is disposed between a side wall portion 122 a having an opening portion 123 and a peripheral edge portion of the stage 20 facing the side wall portion 122 a. The second ground plate 62 (second ground member) is respectively disposed between the three side wall portions 122b, 122c, and 122d other than the side wall portion 122a and other peripheral portions of the stage 20 facing the side wall portions. The ground plates 61 and 62 are arranged at substantially regular intervals along each side of the stage 20.
各接地板61、62典型而言具有相同構成，本實施形 態中由可撓性(撓性(flexibility))金屬板所構成，該可撓性金屬板分別具有連接於側壁122之第一端部601以及連接於載台20之第二端部602，上述各接地板61、62能夠追隨載台20之升降動作而於上下方向彎曲(參照圖1、圖2)。各接地板61、62係由厚度約為0.1mm、寬度約為10mm之鎳基合金或鋁合金等所構成，但不限於此，只要具有導電性則材質及形狀並無特別限定。 The ground plates 61 and 62 typically have the same structure. In the state, it is made of a flexible (flexibility) metal plate having a first end portion 601 connected to the side wall 122 and a second end portion 602 connected to the stage 20, respectively. Each of the ground plates 61 and 62 can be bent in the vertical direction in accordance with the ascending and descending operation of the stage 20 (see FIGS. 1 and 2). Each of the ground plates 61 and 62 is made of a nickel-based alloy or an aluminum alloy having a thickness of about 0.1 mm and a width of about 10 mm, but is not limited thereto. The material and shape are not particularly limited as long as they have conductivity.
各接地板61、62可分別獨立地構成，亦可由複數個接地板之連結體構成。圖4係表示第二接地板62之連結構造之示意圖。如該圖所示，於一片矩形之可撓性金屬板600之面內並列地形成有複數個狹槽(開口)60s，藉此構成圖中上端部及下端部相互連結而成之複數個第二接地板62之連結體。根據該構成，可將金屬板600之上下之各端部分別作為第一端部601及第二端部602而將各接地板62統一地連接到側壁122及載台20。連接方法並無特別限定，典型而言，使用複數個螺釘等固定具。 Each of the ground plates 61 and 62 may be constituted independently, or may be constituted by a connected body of a plurality of ground plates. FIG. 4 is a schematic diagram showing a connection structure of the second ground plate 62. As shown in the figure, a plurality of slots (openings) 60s are formed in parallel on the surface of a rectangular flexible metal plate 600, thereby constituting a plurality of first and lower end portions connected to each other in the figure. The connecting body of the two ground plates 62. According to this configuration, the upper and lower end portions of the metal plate 600 can be connected to the side wall 122 and the stage 20 in a unified manner as the first end portion 601 and the second end portion 602, respectively, and the ground plates 62 can be uniformly connected. The connection method is not particularly limited, and typically, a plurality of fixing devices such as screws are used.
此處，連接於無開口部123之側壁部122b至側壁部122d的第二接地板62之端部601係直接連接於側壁部122b至側壁部122d。另一方面，連接於有開口部123之側壁部122a的第一接地板61之端部601係經由可動單元70之支持體71而連接於側壁部122a。 Here, the end portion 601 of the second ground plate 62 connected to the side wall portion 122b to the side wall portion 122d without the opening portion 123 is directly connected to the side wall portion 122b to the side wall portion 122d. On the other hand, the end portion 601 of the first ground plate 61 connected to the side wall portion 122 a having the opening portion 123 is connected to the side wall portion 122 a via the support 71 of the movable unit 70.
可動單元70具有支持第一接地板61的端部601之支持體71以及使支持體71沿著Z軸方向移動之驅動源72。可動單元70構成為能夠於第一位置與第二位置之間使支持體71於Z軸方向移動(升降)，上述第一位置係第一接地板61隔著開口部123而與開口部123之內周面對向之位置，上述第二位置係第一接地板61電性連接於上述內周面之位置。 The movable unit 70 includes a support body 71 that supports the end portion 601 of the first ground plate 61 and a drive source 72 that moves the support body 71 in the Z-axis direction. The movable unit 70 is configured to be able to move (elevate) the support body 71 in the Z-axis direction between a first position and a second position. The first position is a position between the first ground plate 61 and the opening 123 via the opening 123. The position where the inner peripheral surface faces, the second position is a position where the first ground plate 61 is electrically connected to the inner peripheral surface.
另外，支持體71之形狀只要是於第二位置處第一接地板61電性連接於開口部123之內周面之形狀即可，並無特別限定。 In addition, the shape of the support body 71 is not particularly limited as long as it is a shape in which the first ground plate 61 is electrically connected to the inner peripheral surface of the opening portion 123 at the second position.
繼而，參照圖5及圖6對支持體71之構成之一例進行說明。圖5係支持體71之部分斷裂立體圖，圖6係表示支持體71與開口部123之關係之主要部分之概略剖視圖。 Next, an example of the structure of the support body 71 is demonstrated with reference to FIG. 5 and FIG. 6. FIG. FIG. 5 is a partially broken perspective view of the support 71, and FIG. 6 is a schematic cross-sectional view of a main part showing a relationship between the support 71 and the opening 123.
支持體71配置於開口部123之側壁部122a內面側之端部。支持體71構成為如下：支持排列於Y軸方向之各接地板61之第一端部601的狀態下，如圖6所示能夠於下降位置(第一位置)與上升位置(第二位置)之間移動，上述下降位置係退避至設置於開口部123之下部內周面123a的退避部V之位置，上述上升位置係與開口部123之上部內周面123b接觸之位置。 The support body 71 is arrange | positioned at the edge part of the inner surface side of the side wall part 122a of the opening part 123. The support body 71 is structured as follows: in a state where the first end portion 601 of each ground plate 61 arranged in the Y-axis direction is supported, the support body 71 can be placed in a lowered position (first position) and a raised position (second position) as shown in FIG. During the movement, the lowered position is retracted to the position of the retracted portion V provided on the inner peripheral surface 123a of the lower portion of the opening 123, and the raised position is a position to contact the inner peripheral surface 123b of the upper portion of the opening 123.
退避部V形成為能夠收容支持體71之大小。於退避部V中，支持體71隔著開口部123而與開口部123之上部內周面123b對向。上述下降位置處的支持體71與開口部123之上部內周面123b之間隙並無特別限定，設定為至少能夠供基板W通過開口部123之大小。 The retreat portion V is formed in a size capable of accommodating the support body 71. In the retreat portion V, the support body 71 faces the inner peripheral surface 123 b of the upper portion of the opening portion 123 via the opening portion 123. The gap between the support 71 at the lowered position and the inner peripheral surface 123b above the opening 123 is not particularly limited, and is set to a size at least that the substrate W can pass through the opening 123.
驅動源72設置於腔室本體12之底部121外側，典型而言，由氣缸、油壓缸等流體壓缸所構成，亦可採用滾珠螺桿機構。驅動源72具有氣密地貫通腔室本體12之底部121且連結於支持體71之底部之驅動軸73，且構成為能夠使支持體71於上述第一位置與第二位置之間於Z軸方向升降。 The driving source 72 is disposed outside the bottom 121 of the chamber body 12. Typically, the driving source 72 is composed of a fluid pressure cylinder such as an air cylinder or a hydraulic cylinder, and a ball screw mechanism can also be adopted. The driving source 72 has a driving shaft 73 that passes through the bottom 121 of the chamber body 12 and is connected to the bottom of the support 71 in an airtight manner, and is configured to enable the support 71 to be in the Z axis between the first position and the second position. Lifting direction.
本實施形態中，支持體71係由Y軸方向具有長邊之(沿著開口部123之長度方向延伸之)長方體形狀之金屬塊710所構成。藉此，對開口部123之上部內周面123b之接觸面積增大，於支持體71與側壁部122a之間可實現Y軸方向(開口部123之寬度方向)上大致均勻之接觸。另外，支持體71係於開口部123之寬度方向分割為複數個，且構成為分別能夠個別地或共同地升降移動。 In the present embodiment, the support body 71 is composed of a metal block 710 having a rectangular parallelepiped shape with long sides in the Y-axis direction (extending along the length direction of the opening portion 123). Thereby, the contact area on the inner peripheral surface 123b of the upper portion of the opening portion 123 is increased, and substantially uniform contact in the Y-axis direction (the width direction of the opening portion 123) can be achieved between the support 71 and the side wall portion 122a. In addition, the support body 71 is divided into a plurality of pieces in the width direction of the opening portion 123, and is configured to be able to move up and down individually or collectively.
金屬塊710例如由不鏽鋼或鋁合金等所構成。金屬塊710之一側面(與載台20之周緣部對向之側面)係設為共同 地支持各接地板61的端部601之支持面711，金屬塊710之上表面係設為與開口部123之內壁面對向之對向面712。 The metal block 710 is made of, for example, stainless steel or aluminum alloy. One side of the metal block 710 (the side opposite the peripheral edge portion of the stage 20) is set in common The support surface 711 of the end portion 601 of each ground plate 61 is supported by the ground, and the upper surface of the metal block 710 is set as the facing surface 712 facing the inner wall of the opening portion 123.
各接地板61之端部601係以與支持面711面接觸之方式固定。藉此，實現各接地板61與支持體71之間之接觸電阻之降低。固定方法並無特別限定，能夠採用使用複數個螺釘之機械固定、焊接等。 An end portion 601 of each ground plate 61 is fixed so as to be in surface contact with the support surface 711. This reduces the contact resistance between the ground plates 61 and the support 71. The fixing method is not particularly limited, and mechanical fixing using a plurality of screws, welding, etc. can be used.
導電性片材714經由彈性構件713固定於對向面712。彈性構件713係以自對向面712向上方突出預定高度的方式，配置於對向面712之中心部。彈性構件713係由Y軸方向為長邊之板狀或軸狀構件所構成，其軸方向之剖面形狀(與XZ平面平行之剖面形狀)形成為矩形狀或朝向上方凸出之圓頂形狀。彈性構件713之構成材料並無特別限定，典型而言由橡膠或或彈性體構成。 The conductive sheet 714 is fixed to the facing surface 712 via an elastic member 713. The elastic member 713 is arranged at the center of the facing surface 712 so as to protrude upward from the facing surface 712 by a predetermined height. The elastic member 713 is a plate-shaped or shaft-shaped member having a long side in the Y-axis direction, and a cross-sectional shape in the axial direction (a cross-sectional shape parallel to the XZ plane) is formed into a rectangular shape or a dome shape protruding upward. The constituent material of the elastic member 713 is not particularly limited, but is typically made of rubber or elastomer.
導電性片材714由金屬製片材所構成，該金屬製片材係以被覆彈性構件713之方式固定於對向面712之中心部且Y軸方向為長邊。導電性片材714由具有可撓性之金屬板所構成，其周緣部經由複數個螺釘等固定具固定於對向面712。導電性片材714被覆彈性構件713之區域係構成用以於上述第二位置處抵接於開口部123的上部內周面123b之抵接部71A。抵接部71A構成為經由彈性構件713 而能夠於Z軸方向彈性變形。 The conductive sheet 714 is made of a metal sheet which is fixed to a center portion of the facing surface 712 so as to cover the elastic member 713 and has a long side in the Y-axis direction. The conductive sheet 714 is made of a flexible metal plate, and its peripheral edge portion is fixed to the facing surface 712 via a fixing tool such as a plurality of screws. The area where the conductive sheet 714 covers the elastic member 713 constitutes a contact portion 71A for contacting the upper inner peripheral surface 123b of the opening portion 123 at the second position. The contact portion 71A is configured to pass through the elastic member 713 It can be elastically deformed in the Z-axis direction.
支持體71進一步具有配置於抵接部71A之周圍之密封環715。密封環715以包圍導電性片材714之方式設置於對向面712。密封環715藉由於上述第二位置處與開口部123之上部內周面123b彈性接觸，而自成膜室11阻斷抵接部71A。藉此，防止製程氣體及其反應生成物附著於抵接部71A。 The support body 71 further includes a seal ring 715 arranged around the abutting portion 71A. The seal ring 715 is provided on the facing surface 712 so as to surround the conductive sheet 714. The seal ring 715 blocks the abutting portion 71A from the film forming chamber 11 due to the elastic contact with the inner peripheral surface 123 b of the upper portion of the opening portion 123 at the second position. This prevents the process gas and its reaction product from adhering to the abutting portion 71A.
可動單元70之驅動源72藉由控制器90控制。控制器90由具有CPU(Central Processing Unit；中央處理單元)及記憶體之電腦構成。於圖1所示之成膜步驟中，控制器90分別使載台20移動至上升位置，使支持體71移動至第二位置。另一方面，於圖2所示之基板搬入搬出步驟中，控制器90分別使載台20移動至下降位置，使支持體71移動至第一位置。另外，控制器90構成為除了載台20之升降動作、可動單元70之驅動控制之外，亦能夠控制對氣體供給管線43、高頻電極13施加高頻電壓等電漿CVD裝置100之動作整體。 The driving source 72 of the movable unit 70 is controlled by the controller 90. The controller 90 is composed of a computer having a CPU (Central Processing Unit) and a memory. In the film forming step shown in FIG. 1, the controller 90 moves the stage 20 to the raised position and the support 71 to the second position, respectively. On the other hand, in the substrate loading and unloading step shown in FIG. 2, the controller 90 moves the stage 20 to the lowered position and moves the support 71 to the first position, respectively. In addition, the controller 90 is configured to control the entire operation of the plasma CVD apparatus 100 such as applying a high-frequency voltage to the gas supply line 43 and the high-frequency electrode 13 in addition to the lifting operation of the stage 20 and the drive control of the movable unit 70. .
繼而，對本實施形態之電漿CVD裝置之典型動作進行說明。 Next, a typical operation of the plasma CVD apparatus of this embodiment will be described.
圖1所示之成膜步驟中，成膜室11被加壓至預定壓力，基板W於位於上升位置之載台20上被加熱至預定溫度。高頻電極13將經由氣體導入管線43導入之製程氣體經由空間部311以及簇射板32供給至成膜室11。高頻電極13自高頻電源42(匹配箱41)施加高頻電力，並與載台20之間產生製程氣體之電漿P。藉此，製程氣體中之原料氣體分解，該原料氣體的分解生成物堆積於基板W上，藉此進行成膜。 In the film-forming step shown in FIG. 1, the film-forming chamber 11 is pressurized to a predetermined pressure, and the substrate W is heated to a predetermined temperature on the stage 20 located at the raised position. The high-frequency electrode 13 supplies the process gas introduced through the gas introduction line 43 to the film forming chamber 11 through the space portion 311 and the shower plate 32. The high-frequency electrode 13 applies high-frequency power from a high-frequency power source 42 (matching box 41), and generates a plasma P of a process gas between the high-frequency electrode 13 and the stage 20. Thereby, the raw material gas in the process gas is decomposed, and a decomposition product of the raw material gas is deposited on the substrate W, thereby forming a film.
圖7係對成膜時(產生電漿時)之電漿處理裝置100之電流路徑(參照圖中之虛線箭頭)進行說明之概略圖。可動單元70中之支持體71係位於與開口部123之上部內周面123b接觸之第二位置，載台20係經由第一接地板61及第二接地板62而與腔室本體12之側壁122(122a至122d)電性連接。接地構件60及側壁122係形成使電流自載台20經由腔室本體12及遮蔽蓋15向匹配箱41回流之回流電流路徑。 FIG. 7 is a schematic diagram illustrating a current path (refer to a dotted arrow in the figure) of the plasma processing apparatus 100 during film formation (when plasma generation occurs). The support 71 in the movable unit 70 is located at a second position in contact with the inner peripheral surface 123b of the upper portion of the opening 123, and the stage 20 is connected to the side wall of the chamber body 12 via the first ground plate 61 and the second ground plate 62. 122 (122a to 122d) are electrically connected. The grounding member 60 and the side wall 122 form a return current path for returning current from the stage 20 to the matching box 41 through the chamber body 12 and the shielding cover 15.
成膜後，停止對高頻電極13供給氣體及供給電力，載台20開始向圖2所示之下降位置移動。另一方面，可動單元70中之支持體71亦向圖2及圖6所示之退避位置(第一位置)下降。接下來，門閥51開放，利用未圖示之基板搬送裝置經由開口部123，將成膜過之基板W自載台20上向真空腔室10之外部搬出，將未成膜之基板W向真 空腔室10之內部搬入。然後，門閥51閉合，載台20及支持體71分別上升，執行與上述相同之成膜處理。 After the film formation, the supply of gas and power to the high-frequency electrode 13 is stopped, and the stage 20 starts to move to the lowered position shown in FIG. 2. On the other hand, the support body 71 in the movable unit 70 is also lowered to the retracted position (first position) shown in FIGS. 2 and 6. Next, the gate valve 51 is opened, and the film-formed substrate W is carried out from the stage 20 to the outside of the vacuum chamber 10 through the opening 123 by a substrate conveying device (not shown), and the un-film-formed substrate W is turned toward the true The inside of the hollow chamber 10 is moved in. Then, the gate valve 51 is closed, the stage 20 and the support body 71 are raised, respectively, and the same film formation processing as described above is performed.
又，若成膜時之高頻電流之回流電流路徑未得以最佳化，則有時會於陰極(高頻電極13)與陽極(載台20)之間以外之部位產生意外的放電。例如，如圖8所示，於將接地板61連接於開口部123之正下方之側壁部內面之情形時，由於經由該側壁部之回流電流路徑繞過開口部123之周圍或通過開口部123之內部之門閥51，因而回流電流路徑較長地、或者非等向性地偏稀疏或偏密實地形成。因此，成為發生局部放電之原因，存在膜質或膜厚之面內均勻性降低之情況。 In addition, if the return current path of the high-frequency current during film formation is not optimized, an unexpected discharge may occur at a location other than between the cathode (high-frequency electrode 13) and the anode (stage 20). For example, as shown in FIG. 8, when the ground plate 61 is connected to the inner surface of the side wall portion directly below the opening portion 123, the return current path through the side wall portion bypasses the periphery of the opening portion 123 or passes through the opening portion 123. The internal gate valve 51 is formed with a relatively long return current path or anisotropically thin or densely formed. Therefore, it is a cause of partial discharge, and the in-plane uniformity of film quality or film thickness may fall.
本實施形態中，接地構件60中之第一接地板61係經由支持體71連接於側壁部122a，第二接地板62直接連接於側壁部122b至側壁部122d。因此，與接地構件連接於載台與腔室之底部之間之構成相比，可縮短回流電流路徑。 In this embodiment, the first ground plate 61 in the ground member 60 is connected to the side wall portion 122 a through the support 71, and the second ground plate 62 is directly connected to the side wall portion 122 b to the side wall portion 122 d. Therefore, compared with the configuration in which the ground member is connected between the stage and the bottom of the chamber, the return current path can be shortened.
另一方面，連接於形成有開口部123之側壁部122a之第一接地板61係由能夠於開口部123之內部在Z軸方向升降之支持體71支持。支持體71係於基板通過開口部123時於第一位置待機(圖2)，於產生電漿時移動至第二位置而使第一接地板61電性連接於開口部123之上部內 周面123b(圖1)。藉此，因構築無須繞過開口部123之回流電流路徑，故於側壁122之全周可確保回流電流路徑的對稱性，且提高基板上之膜質及膜厚之均勻性。 On the other hand, the first ground plate 61 connected to the side wall portion 122 a where the opening portion 123 is formed is supported by a support 71 that can be raised and lowered in the Z-axis direction inside the opening portion 123. The support 71 stands by at the first position when the substrate passes through the opening 123 (FIG. 2), and moves to the second position when the plasma is generated, so that the first ground plate 61 is electrically connected to the upper portion of the opening 123. The peripheral surface 123b (Fig. 1). Therefore, since a reflow current path is not required to bypass the opening 123, the symmetry of the reflow current path can be ensured throughout the entire circumference of the side wall 122, and the uniformity of the film quality and film thickness on the substrate is improved.
為了實現回流電流路徑的均勻化或對稱性之提高，較佳為各回流電流路徑之長度相同。而且，例如各接地板60、61與側壁122之連接位置較佳為以腔室本體12之底部121作為基準，分別設定為大致相同之高度。該情形時，支持體71之第二位置亦可設定為與第二接地板62中之與側壁部122b至側壁部122d之連接位置處的自真空腔室10之底部121算起之高度大致相同之高度(參照圖2)。 In order to achieve uniformity or improvement of symmetry of the return current path, it is preferable that the lengths of the respective return current paths are the same. In addition, for example, the connection positions of the ground plates 60 and 61 and the side wall 122 are preferably set to substantially the same height with the bottom 121 of the chamber body 12 as a reference. In this case, the second position of the support body 71 may be set to be substantially the same as the height from the bottom 121 of the vacuum chamber 10 at the connection position between the second ground plate 62 and the side wall portion 122 b to the side wall portion 122 d. Height (see Figure 2).
而且，根據本實施形態，由於在支持體71之對向面712設置有能夠於Z軸方向彈性變形之抵接部71A，因而可藉由第二位置處以適度之按壓力使支持體71與開口部123之上部內周面123b穩定接觸。 Furthermore, according to this embodiment, since the abutting portion 71A capable of being elastically deformed in the Z-axis direction is provided on the facing surface 712 of the support body 71, the support body 71 and the opening can be pressed at a moderate pressing force at the second position The upper inner peripheral surface 123b of the portion 123 is in stable contact.
再者，由於在支持體71之對向面712設置有以包圍抵接部71A之方式配置之密封環715，因而可防止成膜製程中抵接部71A暴露於成膜室11中。藉此，防止製程氣體及其電漿反應生成物與抵接部71A接觸，即便於使用腐蝕性高之氣體之情形時，亦可保護抵接部71A不會腐蝕從而提高耐久性。而且，即便於因抵接部71A與開口部123之接觸而產生灰塵之情形時，亦可避免該灰塵向成 膜室11漏出。藉此，可穩定地進行高品質之成膜處理。 Moreover, since the sealing ring 715 arranged so as to surround the abutting portion 71A is provided on the facing surface 712 of the support body 71, it is possible to prevent the abutting portion 71A from being exposed to the film forming chamber 11 during the film formation process. This prevents the process gas and the plasma reaction product from coming into contact with the contact portion 71A, and even when a highly corrosive gas is used, the contact portion 71A can be protected from corrosion and durability can be improved. In addition, even when dust is generated due to the contact between the abutting portion 71A and the opening portion 123, it is possible to prevent the dust from forming. The membrane chamber 11 leaks. Thereby, a high-quality film-forming process can be performed stably.
再者，本實施形態中，使支持體71升降之驅動源72與使載台20升降之驅動源23係分開構成。因此，於根據成膜處理之規格而載台20之升降移動量發生變化之情形時，亦可確保支持體71之上升位置(第二位置)之定位精度。另外，載台20與支持體71之升降移動可相互同步地進行控制。 In this embodiment, the driving source 72 for raising and lowering the support 71 and the driving source 23 for raising and lowering the stage 20 are configured separately. Therefore, when the amount of movement of the lifting and lowering of the stage 20 is changed according to the specifications of the film forming process, the positioning accuracy of the raising position (second position) of the support 71 can be ensured. In addition, the raising and lowering movements of the stage 20 and the support body 71 can be controlled in synchronization with each other.
如以上，根據本實施形態，可將經由具有開口部123之側壁部122a的回流電流路徑與經由除了該側壁部122a以外之側壁部122b至側壁部122d的回流電流路徑以相同或大致相同之路徑長度而構成，因而可確保回流電流路徑的縮短化、均勻化或對稱性。藉此，可防止局部之異常放電之發生，且可進行膜厚及膜質之均勻性優異之成膜處理。 As described above, according to this embodiment, the return current path through the side wall portion 122a having the opening portion 123 and the return current path through the side wall portion 122b other than the side wall portion 122a to the side wall portion 122d can be the same or substantially the same It has a length, so that shortening, uniformity, or symmetry of the return current path can be ensured. Thereby, the occurrence of local abnormal discharge can be prevented, and a film forming treatment having excellent film thickness and uniformity of film quality can be performed.
尤其本實施形態中，採用27.12MHz之VHF(very high frequency；特高頻)頻帶之高頻電源作為高頻電源42。因此，藉由電漿之高密度化，能夠實現13.56MHz之高頻電源中無法達成之高成膜速度、膜之緻密化。 In particular, in this embodiment, a high-frequency power source in the VHF (very high frequency) band of 27.12 MHz is used as the high-frequency power source 42. Therefore, by increasing the density of the plasma, it is possible to achieve a high film-forming speed and film densification that cannot be achieved with a high-frequency power supply of 13.56 MHz.
另一方面，因採用VHF頻帶電源而引起之電漿密度 高之原因，仍有若回流電流增大而回流電流路徑未最佳化則放電穩定性劣化之擔心。回流電流路徑之不均勻性所引起之局部放電(放電洩漏)中，因離子通量與頻率之餘弦(cos)之平方成比例地增大，故因回流電流路徑長度之微小之差異會產生較大之電場梯度，即便是13.56MHz時未引起放電洩漏之路徑長度，亦會於27.12MHz下引起放電洩漏。 On the other hand, plasma density due to the use of VHF band power supplies The reason for this is that there is a concern that if the reflow current is increased and the reflow current path is not optimized, the discharge stability may be deteriorated. In partial discharge (discharge leakage) caused by the non-uniformity of the return current path, since the ion flux increases proportionally to the square of the cosine (cos) of the frequency, a slight difference in the length of the return current path will cause a small difference. A large electric field gradient, even at a path length that does not cause a discharge leak at 13.56 MHz, will cause a discharge leak at 27.12 MHz.
根據本實施形態，可消除經由具有基板搬入搬出用之開口部123之側壁部122a之回流電流路徑以及經由除了該側壁部122a以外之側壁部122b至側壁部122d之回流電流路徑的不均勻性，因而即便於採用27.12MHz之高頻電源之情形時，亦不會產生局部放電而可實現穩定之成膜。而且，根據本實施形態，連接於開口部123之接地板61構成為能夠於開口部123之內部移動，因而不會妨礙經由開口部123之基板之搬入搬出動作，從而可容易實現上述作用功效。 According to this embodiment, the non-uniformity of the return current path through the side wall portion 122a having the opening 123 for carrying in and out of the substrate and the return current path through the side wall portion 122b to the side wall portion 122d except the side wall portion 122a can be eliminated. Therefore, even when a high-frequency power source of 27.12 MHz is used, stable partial film formation can be achieved without generating partial discharge. Furthermore, according to this embodiment, the ground plate 61 connected to the opening 123 is configured to be movable inside the opening 123, so that the board can not be moved in and out through the opening 123, and the above-mentioned effect can be easily achieved.
以上，對本發明之實施形態進行了說明，但本發明當然不僅限於上述實施形態，亦可添加各種變更。 As mentioned above, although embodiment of this invention was described, it is needless to say that this invention is not limited to the said embodiment, Various changes can be added.
例如以上之實施形態中，已說明如下例：於作為支持體71之金屬塊710之對向面712，設置有能夠於Z軸方向彈性變形之抵接部71A或密封環715，但不限於此。例 如圖9中的A所示，亦可採用僅由不具備上述抵接部或密封環之金屬塊710構成之支持體171。利用此種構成，藉由使對向面712直接與開口部123之上部內周面123b接觸，而可實現第一接地板61與側壁部122a之電性連接。 For example, in the above embodiment, the following example has been described. On the facing surface 712 of the metal block 710 as the support body 71, an abutting portion 71A or a sealing ring 715 capable of elastic deformation in the Z-axis direction is provided, but is not limited thereto . example As shown in A in FIG. 9, a support 171 composed of only a metal block 710 that does not include the abutting portion or the seal ring may be used. With such a configuration, by directly contacting the facing surface 712 with the inner peripheral surface 123b of the upper portion of the opening portion 123, electrical connection between the first ground plate 61 and the side wall portion 122a can be achieved.
而且，以上之實施形態中，已對支持第一接地板61之支持體71由金屬塊710構成之例進行了說明，但也可由陶瓷等絕緣材料所構成。該情形時，如圖9中的B所示，能夠採用如下方式：利用支持體271之對向面712支持各接地板61之端部601，使這些接地板61之端部直接或經由導電性片材714而與開口部123之上部周面部123b接觸。 In the above embodiment, the example in which the support body 71 supporting the first ground plate 61 is composed of the metal block 710 has been described, but it may be made of an insulating material such as ceramics. In this case, as shown by B in FIG. 9, the following method can be adopted: the opposite surface 712 of the support body 271 supports the end portions 601 of the ground plates 61, and the ends of the ground plates 61 are directly or through conductivity. The sheet 714 is in contact with the upper peripheral surface portion 123 b of the opening portion 123.
而且，以上之實施形態中，於真空腔室10之4個側壁部中之1個側壁部122a設置有開口部123，但不限於此，亦可於其他側壁部122b至側壁部122d之至少任一個設置相同之開口部。例如，於相對向之2個側壁部具有基板搬入搬出用的開口部之線上式電漿處理裝置中亦能夠應用本發明。該情形時，藉由於各開口部設置上述構成之可動單元70，可獲得與上述相同之作用功效。 Furthermore, in the above embodiment, the opening portion 123 is provided in one of the four side wall portions 122a of the vacuum chamber 10, but it is not limited to this. At least any of the other side wall portions 122b to 122d may be provided. One is provided with the same opening. For example, the present invention can also be applied to an in-line plasma processing apparatus having openings for loading and unloading a substrate on two opposite side wall portions. In this case, since the movable unit 70 having the above-mentioned configuration is provided in each of the openings, the same functions and effects as described above can be obtained.
圖10至圖12係表示上述電漿處理裝置中之驅動支持體之驅動系統之變形例之概略剖視圖。圖10表示基板搬入搬出時之狀態，圖11表示從基板搬入到成膜前之狀 態，圖12表示成膜時之狀態。 10 to 12 are schematic cross-sectional views showing a modified example of a driving system of a driving support in the above-mentioned plasma processing apparatus. FIG. 10 shows the state when the substrate is carried in and out, and FIG. 11 shows the state before the substrate is carried in to film formation. FIG. 12 shows the state at the time of film formation.
如圖10所示，本實施形態中，設置於側壁122之開口部123包含有下部內周面123a(第一內周面)以及與下部內周面123a對向之上部內周面123b(第二內周面)。而且，本實施形態中，側壁122之內壁125中，於開口部123附近與下部內周面123a相連之部分作為下部內壁125a，於開口部123附近與上部內周面123b相連之部分設為上部內壁125b。 As shown in FIG. 10, in the present embodiment, the opening portion 123 provided on the side wall 122 includes a lower inner peripheral surface 123a (first inner peripheral surface) and an upper inner peripheral surface 123b (first Two inner peripheral surfaces). Furthermore, in the present embodiment, a portion of the inner wall 125 of the side wall 122 that is connected to the lower inner peripheral surface 123a near the opening 123 is defined as a lower inner wall 125a and a portion that is connected to the upper inner peripheral surface 123b near the opening 123. Is the upper inner wall 125b.
支持體81支持複數個第一接地板61。本實施形態中，支持體81由支持棒83支持。支持棒83對支持體81之底部進行支持。 The support body 81 supports a plurality of first ground plates 61. In this embodiment, the support body 81 is supported by a support rod 83. The support rod 83 supports the bottom of the support body 81.
支持體81於退避部V中與和下部內周面123a相連之下部內壁125a(第一內壁)對向。本實施形態中，將支持體81與下部內壁125a對向時之支持體81之位置設為第一位置。當支持體81位於第一位置時，支持體81處於與下部內壁125a非接觸之狀態。當支持體81位於第一位置時，例如載台20位於下降位置。 The support body 81 faces the lower inner wall 125a (first inner wall) connected to the lower inner peripheral surface 123a in the retreat portion V. In this embodiment, the position of the support body 81 when the support body 81 faces the lower inner wall 125a is set to the first position. When the support body 81 is located in the first position, the support body 81 is in a non-contact state with the lower inner wall 125a. When the support body 81 is located at the first position, for example, the stage 20 is located at the lowered position.
驅動支持體81之可動單元80包含有第一驅動部85、第二驅動部86、L型之臂87、固定構件88a、89a以及軸部88b、89b。第一驅動部85及第二驅動部86由控制器 90控制。 The movable unit 80 of the driving support 81 includes a first driving portion 85, a second driving portion 86, an L-shaped arm 87, fixing members 88a, 89a, and shaft portions 88b, 89b. The first driving section 85 and the second driving section 86 are controlled by a controller 90 controls.
第一驅動部85包含有驅動源85a、驅動軸85b。第一驅動部85設置於腔室本體12之底部121外側(例如下方)。第一驅動部85典型而言由氣缸、油壓缸等流體壓缸構成，但亦可採用滾珠螺桿機構。 The first driving section 85 includes a driving source 85a and a driving shaft 85b. The first driving portion 85 is disposed outside (for example, below) the bottom portion 121 of the chamber body 12. The first driving unit 85 is typically constituted by a fluid pressure cylinder such as an air cylinder or a hydraulic cylinder, but a ball screw mechanism may also be used.
軸部89b利用固定構件89a而固定於驅動源85a。軸部89b於Y軸方向延伸。驅動軸85b利用驅動源85a例如能夠於支持棒83延伸之方向伸縮。驅動軸85b之前端連接於支持棒83之下端。驅動軸85b之中心軸與支持棒83之中心軸一致。 The shaft portion 89b is fixed to the drive source 85a by a fixing member 89a. The shaft portion 89b extends in the Y-axis direction. The drive shaft 85b can be extended and contracted in the direction in which the support rod 83 is extended by the drive source 85a. The front end of the drive shaft 85b is connected to the lower end of the support rod 83. The central axis of the drive shaft 85b coincides with the central axis of the support rod 83.
臂87包含有臂部87a、臂部87b。臂部87a例如與臂部87b正交。臂部87b之端軸支撐於軸部88b。藉此，臂87整體能夠以軸部88b為中心而旋轉。軸部88b利用固定構件88a而固定於底部121。軸部88b例如於Y軸方向延伸。與臂部87b相連之臂部87a係固定於與軸部89b為相反側之驅動源85a。藉此，第一驅動部85能夠以軸部88b為中心旋轉。 The arm 87 includes an arm portion 87a and an arm portion 87b. The arm portion 87a is orthogonal to the arm portion 87b, for example. The end of the arm portion 87b is pivotally supported by the shaft portion 88b. Accordingly, the entire arm 87 can be rotated around the shaft portion 88b. The shaft portion 88b is fixed to the bottom portion 121 by a fixing member 88a. The shaft portion 88b extends in the Y-axis direction, for example. The arm portion 87a connected to the arm portion 87b is fixed to a drive source 85a opposite to the shaft portion 89b. Thereby, the 1st driving part 85 can rotate about the shaft part 88b.
當支持體81位於第一位置時，臂部87b與底部121之間之間隙係隨著臂部87b離開軸部88b而逐漸擴大。亦即，當支持體81位於第一位置時，臂部87b延伸之方向 與水平方向交叉。藉此，當支持體81位於第一位置時，固定於臂部87a之驅動源85a相對於高度方向(Z軸方向)斜向配置。其結果，連結於驅動源85a之驅動軸85b亦相對於高度方向傾斜配置。 When the support body 81 is located at the first position, the gap between the arm portion 87b and the bottom portion 121 gradually increases as the arm portion 87b leaves the shaft portion 88b. That is, when the support body 81 is in the first position, the direction in which the arm portion 87b extends Cross the horizontal direction. Thereby, when the support body 81 is located in a 1st position, the drive source 85a fixed to the arm part 87a is arrange | positioned diagonally with respect to a height direction (Z-axis direction). As a result, the drive shaft 85b connected to the drive source 85a is also arranged obliquely with respect to the height direction.
支持棒83貫通設置於底部121之開口部124。支持棒83相對於高度方向斜向傾斜。支持棒83於驅動軸85b之中心軸方向延伸。開口部124之開口寬度並無特別限定，開口部124之內周面以不與支持棒83接觸之方式設定。例如，開口部124之內周面之一部分根據支持棒83之傾斜角度而構成為錐狀。 The support rod 83 penetrates through the opening portion 124 provided in the bottom portion 121. The support bar 83 is inclined obliquely with respect to the height direction. The support rod 83 extends in the direction of the central axis of the drive shaft 85b. The opening width of the opening portion 124 is not particularly limited, and the inner peripheral surface of the opening portion 124 is set so as not to contact the support rod 83. For example, a part of the inner peripheral surface of the opening portion 124 is formed in a tapered shape according to the inclination angle of the support rod 83.
於支持棒83之周圍設置有管體84。例如，管體84於底部121外側包圍支持棒83。管體84係真空波紋管、可撓管體等管體，於驅動軸85b伸縮之方向伸縮或歪曲。管體84連結於開口部124，並且連接於驅動軸85b之前端。若成膜室11被真空排氣，則管體84內為減壓狀態。 A tube body 84 is provided around the support rod 83. For example, the tube body 84 surrounds the support rod 83 outside the bottom 121. The pipe body 84 is a pipe body such as a vacuum bellows pipe or a flexible pipe body, and is stretched or distorted in a direction in which the drive shaft 85b expands and contracts. The pipe body 84 is connected to the opening 124 and is connected to the front end of the drive shaft 85b. When the film forming chamber 11 is evacuated by vacuum, the inside of the tube body 84 is in a decompressed state.
第二驅動部86包含有驅動源86a及驅動軸86b。第二驅動部86設置於腔室本體12之底部121外側(例如第一驅動部85之側方)，典型而言，由氣缸、油壓缸等流體壓缸構成，亦可採用滾珠螺桿機構。 The second driving unit 86 includes a driving source 86a and a driving shaft 86b. The second driving part 86 is provided outside the bottom 121 of the chamber body 12 (for example, the side of the first driving part 85). Typically, the second driving part 86 is composed of a fluid pressure cylinder such as an air cylinder, a hydraulic cylinder, or a ball screw mechanism.
驅動軸86b利用驅動源86a，可於與軸部89b延伸之 方向正交之方向(X軸方向)上伸縮。驅動軸86b之前端軸支撐於軸部89b。若驅動軸86b於X軸方向伸縮，則軸部89b於X軸方向移動。藉此，固定軸部89b之第一驅動部85經由臂87而以軸部88b為中心旋動。 The driving shaft 86b uses a driving source 86a, and can be extended between the driving shaft 86b and the shaft portion 89b. Stretches in a direction orthogonal to the direction (X-axis direction). The front end of the drive shaft 86b is supported by the shaft portion 89b. When the drive shaft 86b expands and contracts in the X-axis direction, the shaft portion 89b moves in the X-axis direction. Thereby, the first driving portion 85 of the fixed shaft portion 89 b is rotated around the shaft portion 88 b via the arm 87.
而且，於開口部123之上部內周面123b配置有收集構件127。收集構件127自開口部123朝向成膜室11突出。收集構件127位於與開口部123之上部內周面123b相連之上部內壁125b(第二內壁)之正下方。例如，於收集構件127之正上方引起發塵之情形時，由發塵而產生之異物會收集於收集構件127上。 A collecting member 127 is disposed on the inner peripheral surface 123 b of the upper portion of the opening portion 123. The collecting member 127 protrudes from the opening portion 123 toward the film forming chamber 11. The collecting member 127 is located directly below the upper inner wall 125b (second inner wall) that is connected to the upper inner peripheral surface 123b of the opening 123. For example, in the case where dust is generated directly above the collecting member 127, foreign matter generated by the dust is collected on the collecting member 127.
圖11中表示支持體81自第一位置移動至與上部內壁125b對向之位置後的狀態。亦即，藉由驅動軸85b自驅動源85a伸長，而支持體81自第一位置移動至與上部內壁125b對向之位置。本實施形態中，將支持體81與上部內壁125b對向時的支持體81之位置設為第三位置。當支持體81位於第三位置時，支持體81處於與上部內壁125b非接觸之狀態。而且，當支持體81位於第三位置時，例如載台20位於上升位置。 FIG. 11 shows a state where the support 81 has moved from the first position to a position facing the upper inner wall 125b. That is, the drive shaft 85b is extended from the drive source 85a, and the support 81 is moved from the first position to a position facing the upper inner wall 125b. In this embodiment, the position of the support body 81 when the support body 81 faces the upper inner wall 125b is set to the third position. When the support body 81 is located in the third position, the support body 81 is in a non-contact state with the upper inner wall 125b. When the support 81 is located at the third position, for example, the stage 20 is located at the raised position.
本實施形態中，於支持體81藉由第一驅動部85而於第一位置與第三位置之間升降時，以支持體81不與收集構件127接觸之方式調整支持棒83之傾斜角度、收集構 件127向成膜室11突出之長度、支持體81之尺寸等。 In this embodiment, when the support body 81 is raised and lowered between the first position and the third position by the first driving portion 85, the inclination angle of the support rod 83 is adjusted so that the support body 81 does not contact the collection member 127, Collection structure The length of the member 127 protruding toward the film forming chamber 11, the size of the support 81, and the like.
圖12中表示支持體81自第三位置移動至與上部內壁125b接觸之位置後的狀態。藉此，由支持體81支持之第一接地板61與上部內壁125b電性連接。例如，藉由第二驅動部86之驅動軸86b自驅動源86a延伸，而由驅動軸86b向X軸方向推壓之第一驅動部85經由臂87以軸部88b為中心旋轉。藉此，由驅動軸85b支持之支持棒83向第一驅動部85被驅動軸86b所推壓之方向的相反側傾斜，從而支持體81與上部內壁125b接觸。支持棒83成為與高度方向實質平行或接***行之狀態。本實施形態中，將支持體81與上部內壁125b電性連接時的支持體81之位置設為第二位置。 FIG. 12 shows a state where the support 81 has moved from the third position to a position in contact with the upper inner wall 125b. Thereby, the first ground plate 61 supported by the support body 81 is electrically connected to the upper inner wall 125b. For example, the drive shaft 86b of the second drive portion 86 extends from the drive source 86a, and the first drive portion 85 pushed in the X-axis direction by the drive shaft 86b rotates around the shaft portion 88b via the arm 87. Thereby, the support rod 83 supported by the drive shaft 85b is inclined to the side opposite to the direction in which the first drive portion 85 is pushed by the drive shaft 86b, so that the support 81 comes into contact with the upper inner wall 125b. The support rod 83 is substantially parallel to or nearly parallel to the height direction. In this embodiment, the position of the support 81 when the support 81 is electrically connected to the upper inner wall 125b is set to the second position.
如此，可動單元80可使支持體81於第一位置與第三位置之間移動，且可使支持體81於第三位置與第二位置之間移動。藉此，可動單元80可使支持體81於第一位置與第二位置之間移動。 In this way, the movable unit 80 can move the support body 81 between the first position and the third position, and can move the support body 81 between the third position and the second position. Thereby, the movable unit 80 can move the support body 81 between the first position and the second position.
另外，第一驅動部85之驅動與第二驅動部86之驅動亦可同時進行。該情形時，支持體81於第一位置至第二位置之間以描繪緩和曲線之方式移動。然而，支持體81係支持體81之軌道被控制，以使得於移動中不會與收集構件127接觸。 In addition, the driving of the first driving section 85 and the driving of the second driving section 86 may be performed simultaneously. In this case, the support 81 moves between the first position and the second position so as to draw a gentle curve. However, the orbit of the support 81 is controlled so that it does not contact the collection member 127 during movement.
圖13係上述驅動系統之變形例中使用之支持體之部分斷裂立體圖。 FIG. 13 is a partially broken perspective view of a support used in a modification of the drive system.
本實施形態中，支持體81係由Y軸方向具有長邊之長方體形狀之金屬塊810所構成。藉此，對上部內壁125b之接觸面積增大，於支持體81與側壁122之間之Y軸方向可實現大致均勻之接觸。圖13之例中，金屬塊810由1根支持棒83支持，但不限於該例。金屬塊810亦可由複數個支持棒83支持。另外，支持體81亦可於開口部123之寬度方向分割為複數個，且構成為分別能夠個別地或共同地升降移動。 In this embodiment, the support body 81 is composed of a metal block 810 having a rectangular parallelepiped shape with long sides in the Y-axis direction. Thereby, the contact area to the upper inner wall 125b is increased, and a substantially uniform contact can be achieved in the Y-axis direction between the support 81 and the side wall 122. In the example of FIG. 13, the metal block 810 is supported by one support rod 83, but it is not limited to this example. The metal block 810 may also be supported by a plurality of support rods 83. In addition, the support body 81 may be divided into a plurality of pieces in the width direction of the opening portion 123, and may be configured to be able to move up and down individually or collectively.
金屬塊810例如由不鏽鋼或鋁合金等所構成。金屬塊810之一側面(與載台20之周緣部對向之側面)設為共同地支持各接地板61的端部601之支持面811，與支持面811為相反側之金屬塊810之側面係設為與上部內壁125b對向之對向面812。 The metal block 810 is made of, for example, stainless steel or aluminum alloy. One side of the metal block 810 (the side opposite to the peripheral edge portion of the stage 20) is a support surface 811 that collectively supports the end portion 601 of each ground plate 61, and the side of the metal block 810 that is opposite to the support surface 811. It is set as the facing surface 812 facing the upper inner wall 125b.
各接地板61的端部601係以與支持面811面接觸之方式固定。藉此實現各接地板61與支持體81之間之接觸電阻之降低。固定方法並無特別限定，能夠採用使用複數個螺釘之機械固定、焊接等。 An end portion 601 of each ground plate 61 is fixed so as to be in surface contact with the support surface 811. This reduces the contact resistance between each ground plate 61 and the support 81. The fixing method is not particularly limited, and mechanical fixing using a plurality of screws, welding, etc. can be used.
導電性片材814係經由彈性構件813固定於對向面812。彈性構件813係以自對向面812向導電性片材814側突出預定高度的方式配置於對向面812之中心部。彈性構件813係由Y軸方向為長邊之板狀或軸狀構件所構成，其剖面形狀(與XZ平面平行之剖面形狀)形成為矩形狀或向上方凸出之圓頂形狀。彈性構件813之構成材料並無特別限定，典型而言由橡膠或彈性體所構成。 The conductive sheet 814 is fixed to the facing surface 812 via an elastic member 813. The elastic member 813 is arranged at the center of the facing surface 812 so as to protrude from the facing surface 812 to the conductive sheet 814 side by a predetermined height. The elastic member 813 is a plate-shaped or shaft-shaped member having a long side in the Y-axis direction, and a cross-sectional shape (a cross-sectional shape parallel to the XZ plane) is formed into a rectangular shape or a dome shape protruding upward. The constituent material of the elastic member 813 is not particularly limited, but is typically made of rubber or an elastomer.
導電性片材814由金屬製片材所構成，該金屬製片材係以被覆彈性構件813之方式固定於對向面812之中心部且Y軸方向為長邊。導電性片材814由具有可撓性之金屬板所構成，導電性片材814的周緣部係經由複數個螺釘等固定具固定於對向面812。導電性片材814被覆彈性構件813之區域係構成於第二位置處抵接於上部內壁125b之抵接部81A。抵接部81A構成為經由彈性構件813而能夠於X軸方向彈性變形。 The conductive sheet 814 is made of a metal sheet that is fixed to a center portion of the facing surface 812 so as to cover the elastic member 813 and has a long side in the Y-axis direction. The conductive sheet 814 is made of a flexible metal plate, and the peripheral edge portion of the conductive sheet 814 is fixed to the facing surface 812 via a fixing tool such as a plurality of screws. The area where the conductive sheet 814 covers the elastic member 813 constitutes a contact portion 81A that abuts on the upper inner wall 125b at the second position. The contact portion 81A is configured to be elastically deformable in the X-axis direction via an elastic member 813.
支持體81進一步具有配置於抵接部81A之周圍之密封環815。密封環815以包圍導電性片材814之方式設置於對向面812。密封環815係藉由於第二位置處與上部內壁125b彈性接觸而自成膜室11阻斷抵接部81A。藉此，防止製程氣體及其反應生成物附著於抵接部81A。 The support body 81 further includes a seal ring 815 arranged around the contact portion 81A. The seal ring 815 is provided on the facing surface 812 so as to surround the conductive sheet 814. The seal ring 815 blocks the contact portion 81A from the film forming chamber 11 due to the elastic contact with the upper inner wall 125b at the second position. This prevents the process gas and its reaction product from adhering to the contact portion 81A.
圖14係上述收集構件之部分斷裂立體圖。 Fig. 14 is a partially broken perspective view of the collecting member.
收集構件127由Y軸方向具有長邊之長方體形狀之金屬塊構成。當支持體81位於第二位置時，支持體81位於收集構件127之收集面127a之正上方。藉此，可效率佳地將支持體81與上部內壁125b相接時產生之異物收集於收集面127a。 The collecting member 127 is composed of a rectangular parallelepiped metal block having long sides in the Y-axis direction. When the support body 81 is located at the second position, the support body 81 is located directly above the collection surface 127a of the collection member 127. Thereby, foreign matter generated when the support body 81 contacts the upper inner wall 125b can be efficiently collected on the collection surface 127a.
收集構件127例如由不鏽鋼或鋁合金等構成。收集構件127之固定方法並無特別限定，例如，能夠採用使用複數個螺釘之機械固定。而且，圖13之例中，收集構件127設置於上部內周面123b，但不限於該例。例如，收集構件127亦可安裝於上部內壁125b。 The collecting member 127 is made of, for example, stainless steel or aluminum alloy. The method for fixing the collecting member 127 is not particularly limited, and for example, mechanical fixing using a plurality of screws can be used. Moreover, in the example of FIG. 13, the collecting member 127 is provided on the upper inner peripheral surface 123 b, but it is not limited to this example. For example, the collecting member 127 may be attached to the upper inner wall 125b.
圖15係上述收集構件之變形例之部分斷裂立體圖。 Fig. 15 is a partially broken perspective view of a modification of the above-mentioned collecting member.
而且，亦可於收集構件127之上表面側形成有凹部127c。若為此種構成，則異物可效率更佳地被凹部127c收集。 Further, a concave portion 127c may be formed on the upper surface side of the collecting member 127. With such a configuration, the foreign matter can be more efficiently collected by the recessed portion 127 c.
若為以上之構成，則除回流電流路徑縮短之外，支持體81自第一位置經由第三位置而移動至第二位置。藉此，支持體81不與收集構件127接觸，從而不會出現由該接觸所引起之發塵。而且，即便導電性片材814之抵接部81A與上部內壁125b接觸而發塵，亦可利用配置於支 持體81與上部內壁125b相接之部分之正下方的收集構件127將異物(例如灰塵)收集於收集構件127上。藉此，異物更不易附著於基板W。 With the above configuration, in addition to shortening the return current path, the support 81 moves from the first position to the second position via the third position. Thereby, the support body 81 does not come into contact with the collecting member 127, so that dust generation caused by the contact does not occur. Furthermore, even if the contact portion 81A of the conductive sheet 814 comes into contact with the upper inner wall 125b and dust is generated, it can be used by being disposed on the support. The collection member 127 directly below the portion where the holding body 81 contacts the upper inner wall 125b collects foreign matter (such as dust) on the collection member 127. This makes it more difficult for foreign matter to adhere to the substrate W.
圖16至圖18係表示具備上述變形例之驅動系統之電漿處理裝置之變形例之概略剖視圖。圖16表示基板搬入搬出時之狀態，圖17表示基板搬入到成膜前之狀態，圖18表示成膜時之狀態。 16 to 18 are schematic cross-sectional views showing a modification of a plasma processing apparatus provided with the drive system of the modification described above. FIG. 16 shows the state when the substrate is carried in and out, FIG. 17 shows the state before the substrate is carried into film formation, and FIG. 18 shows the state during film formation.
如圖16所示，具備可動單元80之電漿處理裝置中，於側壁122之內壁125形成有凹部125c。凹部125c連通到開口部123。於內壁125與下部內壁125a形成有階差，內壁125與上部內壁125b形成有階差。亦即，下部內壁125a及上部內壁125b成為凹部125c之底部之一部分。 As shown in FIG. 16, in the plasma processing apparatus provided with the movable unit 80, a recess 125 c is formed in the inner wall 125 of the side wall 122. The recessed portion 125c communicates with the opening portion 123. A step is formed between the inner wall 125 and the lower inner wall 125a, and a step is formed between the inner wall 125 and the upper inner wall 125b. That is, the lower inner wall 125a and the upper inner wall 125b become a part of the bottom of the recess 125c.
支持體81之至少一部分收納於凹部125c。支持體81於退避部V中與下部內壁125a對向。將該位置設為第一位置。當支持體81位於第一位置時，支持體81處於與下部內壁125a非接觸之狀態。當支持體81位於第一位置時，例如，載台20位於下降位置。 At least a part of the support body 81 is housed in the recess 125c. The support body 81 faces the lower inner wall 125a in the retreat portion V. Set this position as the first position. When the support body 81 is located in the first position, the support body 81 is in a non-contact state with the lower inner wall 125a. When the support body 81 is located at the first position, for example, the stage 20 is located at the lowered position.
圖17中表示支持體81自第一位置移動至與上部內壁125b對向之位置後的狀態。亦即，藉由驅動軸85b自驅動源85a伸長，支持體81自第一位置移動至與上部內壁125b 對向之位置。將該支持體81之位置設為第三位置。當支持體81位於第三位置時，支持體81處於與上部內壁125b非接觸之狀態。而且，當支持體81位於第三位置時，例如載台20位於上升位置。 FIG. 17 shows a state where the support 81 has moved from the first position to a position facing the upper inner wall 125b. That is, as the drive shaft 85b is extended from the drive source 85a, the support 81 moves from the first position to the upper inner wall 125b. Opposite position. The position of the support 81 is set to a third position. When the support body 81 is located in the third position, the support body 81 is in a non-contact state with the upper inner wall 125b. When the support 81 is located at the third position, for example, the stage 20 is located at the raised position.
圖18中表示支持體81自第三位置移動至與上部內壁125b接觸之位置後的狀態。由支持體81支持之第一接地板61與上部內壁125b電性連接。例如，藉由第二驅動部86之驅動軸86b自驅動源86a延伸，而由驅動軸86b向X軸方向推壓之第一驅動部85經由臂87以軸部88b為中心旋轉。藉此，由驅動軸85b支持之支持棒83向第一驅動部85被驅動軸86b推壓之方向的相反側傾斜，從而支持體81與上部內壁125b接觸。支持體81之至少一部分收容於凹部125c。將該支持體81之位置設為第二位置。 FIG. 18 shows a state where the support 81 has moved from the third position to a position in contact with the upper inner wall 125b. The first ground plate 61 supported by the support body 81 is electrically connected to the upper inner wall 125b. For example, the drive shaft 86b of the second drive portion 86 extends from the drive source 86a, and the first drive portion 85 pushed in the X-axis direction by the drive shaft 86b rotates around the shaft portion 88b via the arm 87. Thereby, the supporting rod 83 supported by the driving shaft 85b is inclined to the side opposite to the direction in which the first driving portion 85 is pushed by the driving shaft 86b, so that the supporting body 81 comes into contact with the upper inner wall 125b. At least a part of the support body 81 is housed in the recess 125c. The position of the support 81 is set to the second position.
若為此種構成，則支持體81與載台20之間之距離及支持棒83與載台20之間之距離會進一步延長，從而支持體81、支持棒83以及載台20之各自之配置自由度增加。再者，於支持體81與載台20之間或支持棒83與載台20之間容易配置其他構件。 With this configuration, the distance between the support body 81 and the stage 20 and the distance between the support rod 83 and the stage 20 will be further extended, so that the respective arrangements of the support body 81, the support rod 83, and the stage 20 will be longer. Increased degrees of freedom. Further, it is easy to arrange other members between the support body 81 and the stage 20 or between the support bar 83 and the stage 20.
以上之實施形態中，進而以列舉作為電漿處理裝置之電漿CVD裝置為例進行了說明，但不限於此，本發明亦能夠應用於電漿蝕刻裝置或電漿摻雜裝置等其他電漿處 理裝置中。 In the above embodiment, a plasma CVD apparatus as a plasma processing apparatus has been described as an example, but the present invention is not limited to this, and the present invention can also be applied to other plasmas such as a plasma etching apparatus or a plasma doping apparatus. Place 理 装置 中。 Management device.
10‧‧‧真空腔室 10‧‧‧Vacuum chamber
11‧‧‧成膜室 11‧‧‧Film forming room
12‧‧‧腔室本體 12‧‧‧ chamber body
13‧‧‧高頻電極 13‧‧‧ high frequency electrode
14‧‧‧絕緣構件 14‧‧‧ Insulating member
15‧‧‧遮蔽蓋 15‧‧‧shield cover
20‧‧‧載台 20‧‧‧ carrier
21‧‧‧支持面 21‧‧‧Support
22‧‧‧升降軸 22‧‧‧ Lifting shaft
23、72‧‧‧驅動源 23, 72‧‧‧ drive source
31‧‧‧電極凸緣 31‧‧‧electrode flange
32‧‧‧簇射板 32‧‧‧ shower plate
41‧‧‧匹配箱 41‧‧‧ matching box
42‧‧‧高頻電源 42‧‧‧High Frequency Power
43‧‧‧氣體導入管線 43‧‧‧Gas introduction pipeline
51‧‧‧門閥 51‧‧‧Gate Valve
60‧‧‧接地構件 60‧‧‧ grounding member
61‧‧‧第一接地板 61‧‧‧The first ground plate
62‧‧‧第二接地板 62‧‧‧Second ground plate
70‧‧‧可動單元 70‧‧‧ mobile unit
71‧‧‧支持體 71‧‧‧ support
73‧‧‧驅動軸 73‧‧‧Drive shaft
90‧‧‧控制器 90‧‧‧ Controller
100‧‧‧電漿處理裝置 100‧‧‧ Plasma treatment device
121‧‧‧底部 121‧‧‧ bottom
122‧‧‧側壁 122‧‧‧ sidewall
122a‧‧‧側壁部 122a‧‧‧ sidewall
123‧‧‧開口部 123‧‧‧ opening
311‧‧‧空間部 311‧‧‧Ministry of Space
601、602‧‧‧端部 601, 602‧‧‧ end
P‧‧‧電漿 P‧‧‧ Plasma
W‧‧‧基板 W‧‧‧ substrate
X、Y、Z‧‧‧軸 X, Y, Z‧‧‧ axis
Claims (10)
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| JP2016123404 | 2016-06-22 | ||
| JP2016-123404 | 2016-06-22 |
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| JP (1) | JP6564946B2 (en) |
| KR (1) | KR102242988B1 (en) |
| CN (1) | CN109477221B (en) |
| TW (1) | TWI650790B (en) |
| WO (1) | WO2017221829A1 (en) |
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| TWI756601B (en) * | 2018-12-20 | 2022-03-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | Stage apparatus |
| TWI777045B (en) * | 2018-04-27 | 2022-09-11 | 大陸商中微半導體設備（上海）股份有限公司 | Capacitively coupled plasma processing system and method with adjustable electrode spacing |
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| JP7186393B2 (en) * | 2018-12-06 | 2022-12-09 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP7245107B2 (en) * | 2019-04-23 | 2023-03-23 | 株式会社アルバック | Plasma processing equipment |
| WO2020222764A1 (en) * | 2019-04-29 | 2020-11-05 | Applied Materials, Inc. | Ground strap assemblies |
| KR102378330B1 (en) * | 2019-10-11 | 2022-03-24 | 세메스 주식회사 | Apparatus and method for treating substrate |
| JP7492900B2 (en) | 2020-10-29 | 2024-05-30 | 株式会社アルバック | Plasma Processing Equipment |
| CN114664622A (en) * | 2020-12-23 | 2022-06-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and adjusting method |
| US20230243035A1 (en) * | 2022-01-28 | 2023-08-03 | Applied Materials, Inc. | Ground return for thin film formation using plasma |
| CN115881506B (en) * | 2023-03-02 | 2023-06-27 | 深圳市新凯来技术有限公司 | Plasma adjusting device and semiconductor etching equipment |
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| US7884025B2 (en) * | 2007-01-30 | 2011-02-08 | Applied Materials, Inc. | Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources |
| KR101577474B1 (en) * | 2008-02-08 | 2015-12-14 | 램 리써치 코포레이션 | Rf return strap for use in plasma processing apparatus |
| JP5683469B2 (en) * | 2008-10-09 | 2015-03-11 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | RF return path of large plasma processing chamber |
| JPWO2010079756A1 (en) * | 2009-01-09 | 2012-06-21 | 株式会社アルバック | Plasma processing equipment |
| CN102308675B (en) * | 2009-02-04 | 2016-01-13 | 应用材料公司 | For the ground connection return flow path of plasma process |
| WO2010132716A2 (en) * | 2009-05-13 | 2010-11-18 | Applied Materials, Inc. | Anodized showerhead |
| JP5375763B2 (en) * | 2010-07-27 | 2013-12-25 | 三菱電機株式会社 | Plasma device and semiconductor thin film manufacturing method using the same |
| TW201324818A (en) * | 2011-10-21 | 2013-06-16 | Applied Materials Inc | Method and apparatus for fabricating silicon heterojunction solar cells |
| CN103871819A (en) * | 2012-12-12 | 2014-06-18 | 应用材料公司 | Large-size chamber for forming HJT of high uniformity |
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| TWI777045B (en) * | 2018-04-27 | 2022-09-11 | 大陸商中微半導體設備（上海）股份有限公司 | Capacitively coupled plasma processing system and method with adjustable electrode spacing |
| TWI756601B (en) * | 2018-12-20 | 2022-03-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | Stage apparatus |
| US11694870B2 (en) | 2018-12-20 | 2023-07-04 | Asml Netherlands B.V. | Stage apparatus |
| US11996263B2 (en) | 2018-12-20 | 2024-05-28 | Asml Netherlands B.V. | Stage apparatus |
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| JPWO2017221829A1 (en) | 2018-11-29 |
| JP6564946B2 (en) | 2019-08-21 |
| TWI650790B (en) | 2019-02-11 |
| KR20190019965A (en) | 2019-02-27 |
| WO2017221829A1 (en) | 2017-12-28 |
| CN109477221B (en) | 2020-12-29 |
| KR102242988B1 (en) | 2021-04-20 |
| CN109477221A (en) | 2019-03-15 |
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