TW201802911A - Substrate processing method and substrate processing apparatus - Google Patents
Substrate processing method and substrate processing apparatus Download PDFInfo
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- TW201802911A TW201802911A TW106104897A TW106104897A TW201802911A TW 201802911 A TW201802911 A TW 201802911A TW 106104897 A TW106104897 A TW 106104897A TW 106104897 A TW106104897 A TW 106104897A TW 201802911 A TW201802911 A TW 201802911A
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- 239000000758 substrate Substances 0.000 title claims abstract description 238
- 238000012545 processing Methods 0.000 title claims description 70
- 238000003672 processing method Methods 0.000 title claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 164
- 239000007788 liquid Substances 0.000 claims abstract description 159
- 239000003960 organic solvent Substances 0.000 claims abstract description 133
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 238000011049 filling Methods 0.000 claims description 84
- 239000000243 solution Substances 0.000 claims description 78
- 239000000463 material Substances 0.000 claims description 61
- 230000007246 mechanism Effects 0.000 claims description 49
- 238000011282 treatment Methods 0.000 claims description 25
- 239000011259 mixed solution Substances 0.000 claims description 15
- 230000003028 elevating effect Effects 0.000 claims description 7
- 230000005484 gravity Effects 0.000 claims description 7
- 230000001360 synchronised effect Effects 0.000 claims description 3
- 239000000945 filler Substances 0.000 abstract description 13
- 238000001879 gelation Methods 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 69
- 230000002093 peripheral effect Effects 0.000 description 28
- 239000000126 substance Substances 0.000 description 28
- 238000001035 drying Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
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- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000005070 sampling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
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- 238000004132 cross linking Methods 0.000 description 1
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- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
本發明係關於一種基板處理方法及基板處理裝置。 The present invention relates to a substrate processing method and a substrate processing apparatus.
習知，於半導體基板(以下，簡稱為「基板」)之製造步驟中，使用基板處理裝置對基板實施各種各樣之處理。例如，藉由對表面上形成有光阻之圖案之基板供給藥液，對基板之表面進行蝕刻等之處理。於供給藥液之後，還進行對基板供給純水以除去表面之藥液之沖洗處理、及使基板高速旋轉而除去表面之純水之乾燥處理。 Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as "substrate"), various processes are performed on the substrate using a substrate processing apparatus. For example, the surface of the substrate is subjected to etching or the like by supplying a chemical solution to the substrate on which the pattern of the photoresist is formed. After the supply of the chemical liquid, a rinsing treatment of supplying the pure water to the substrate to remove the chemical liquid on the surface, and a drying process of rotating the substrate at a high speed to remove the pure water on the surface are also performed.
於基板之表面形成有多數之微細圖案要素的情況下，若依序進行純水之沖洗處理及乾燥處理，則於乾燥途中，會於相鄰之2個圖案要素之間形成純水之液面。於該情況下，有可能因作用在圖案要素之純水之表面張力而造成圖案要素倒塌。因此，提出有一種方法，其藉由將充填材溶液充填於多數之圖案要素之間，且以乾式蝕刻等使固化之充填材料昇華，以防止在乾燥處理中之圖案要素之倒塌。 When a plurality of fine pattern elements are formed on the surface of the substrate, if pure water is washed and dried in sequence, a pure water level is formed between the adjacent two pattern elements during drying. . In this case, there is a possibility that the pattern element collapses due to the surface tension of the pure water acting on the pattern element. Therefore, there has been proposed a method of sublimating a solidified filling material by dry etching or the like by filling a filling material solution between a plurality of pattern elements to prevent collapse of the pattern elements in the drying process.
再者，於日本專利特開2014-72439號公報(文獻1)中，記載有以下之問題：當於沖洗處理之執行後，使純水滯留於基板之表面而形成積水(puddle)狀態之液膜，並以IPA(異丙醇)取代該液膜中含有之純水，而形成積水狀態之IPA之液膜時，在疏水性高 之基板或大徑之基板中，於純水液膜之形成中，會於液膜產生龜裂而使基板表面露出。此外，於文獻1中，揭示有一種在沖洗處理後，朝基板之表面供給純水與IPA之混合液之方法。於該方法中，因混合液具有較低之表面張力，可良好地擴散於基板之表面上，從而可以含水之狀態之液膜覆蓋基板之表面全域。 Further, in Japanese Laid-Open Patent Publication No. 2014-72439 (Document 1), there is a problem in that after the execution of the rinsing treatment, pure water is retained on the surface of the substrate to form a liquid in a puddle state. Membrane, and replacing the pure water contained in the liquid film with IPA (isopropyl alcohol) to form a liquid film of IPA in a standing state, which is highly hydrophobic In the substrate or the large-diameter substrate, in the formation of the pure water film, cracks are formed in the liquid film to expose the surface of the substrate. Further, in Document 1, there is disclosed a method of supplying a mixed liquid of pure water and IPA to the surface of a substrate after the rinsing treatment. In this method, since the mixed liquid has a low surface tension, it can be well diffused on the surface of the substrate, so that the liquid film in a state of water can cover the entire surface of the substrate.
然而，於朝主表面上供給充填材溶液時，為了將充填材溶液充填於圖案要素之間，會將基板之轉速設定為較低。因此，於具有複數個杯部之基板處理裝置中，自主表面上溢出之充填材溶液，係藉由最內側之杯部接取。此外，根據充填材溶液之種類，充填材溶液因與純水混合而有可能變成膠狀。於該情況下，會將設置於內側杯部之排液管路堵塞，因此要求能抑制純水朝內側杯部內之流入，防止充填材溶液與純水混合。 However, when the filling material solution is supplied to the main surface, the rotation speed of the substrate is set to be low in order to fill the filling material solution between the pattern elements. Therefore, in the substrate processing apparatus having a plurality of cup portions, the filling material solution overflowing on the autonomous surface is taken up by the innermost cup portion. Further, depending on the type of the filling material solution, the filling material solution may become a gel due to mixing with pure water. In this case, since the drain line provided in the inner cup portion is clogged, it is required to suppress the inflow of pure water into the inner cup portion and prevent the filling material solution from being mixed with the pure water.
另一方面，為了將充填材溶液適宜地充填於圖案要素之間的間隙內，較佳可於供給充填材溶液之前，在基板之主表面上形成IPA之液膜。例如，於進行了純水之沖洗處理後的基板之主表面上形成有較厚之純水之液膜的狀態下，藉由朝主表面上供給IPA，而形成IPA之液膜。然而，於純水之液膜之形成中，需要減小基板之轉速，因此純水會落下於內側杯部內。因此，為了防止充填材溶液與純水在內側杯部內混合，要求不用形成純水之液膜，而形成IPA之液膜。實際上若於純水之沖洗處理後，不形成純水之液膜，而直接將IPA供給於主表面上，則根據圖案要素之形狀或大小、配置等，確認圖案要素會發生倒塌。 On the other hand, in order to appropriately fill the filling material solution in the gap between the pattern elements, it is preferable to form a liquid film of IPA on the main surface of the substrate before the supply of the filling material solution. For example, in a state in which a liquid film of thick pure water is formed on the main surface of the substrate after the rinsing treatment of pure water, IPA is supplied to the main surface to form a liquid film of IPA. However, in the formation of a liquid film of pure water, it is necessary to reduce the rotation speed of the substrate, so that pure water falls into the inner cup portion. Therefore, in order to prevent the filling material solution from being mixed with the pure water in the inner cup portion, it is required to form a liquid film of IPA without forming a liquid film of pure water. In fact, if the liquid film of pure water is not formed after the rinsing treatment of pure water, and IPA is directly supplied to the main surface, it is confirmed that the pattern elements are collapsed according to the shape, size, arrangement, and the like of the pattern elements.
此外，於吐出純水等之噴嘴與吐出IPA之噴嘴互不相同之基板處理裝置中，於純水之供給後形成有純水之液膜之狀態 下，需要將兩個噴嘴互換。然而，於為了防止充填材溶液與純水在內側杯部內混合而省去純水之液膜的形成之情況下，在交換兩個噴嘴之期間，基板之主表面會產生局部乾燥，進而恐有圖案要素倒塌之虞。 Further, in the substrate processing apparatus in which the nozzle for discharging pure water or the like and the nozzle for discharging the IPA are different from each other, the state of the liquid film of pure water is formed after the supply of the pure water. Next, you need to interchange the two nozzles. However, in the case of preventing the formation of a liquid film of pure water in order to prevent the filling material solution from being mixed with the pure water in the inner cup portion, the main surface of the substrate may be partially dried during the exchange of the two nozzles, and thus there is fear The pattern elements collapsed.
本發明係著眼於一種基板處理裝置之基板處理方法，該基板處理裝置，係具備圍繞在一主表面形成有圖案之基板的周圍之外側杯部、及配置於外側杯部之內側之內側杯部，且該基板處理方法之目的，在於防止充填材溶液與純水在內側杯部內混合，並抑制在充填材溶液之供給前之圖案要素的倒塌。 The present invention relates to a substrate processing method for a substrate processing apparatus including a peripheral cup portion surrounding a substrate on which a pattern is formed on a main surface, and an inner cup portion disposed inside the outer cup portion. The purpose of the substrate processing method is to prevent the filling material solution from being mixed with the pure water in the inner cup portion and suppress the collapse of the pattern element before the supply of the filling material solution.
本發明之一基板處理方法，其包含以下之步驟：a)於將上述內側杯部之上端配置於較上述外側杯部之上端更靠下方之第1狀態下，朝藉由基板旋轉機構而旋轉之上述基板之朝向上方之上述主表面供給純水，並藉由上述外側杯部之內側面接取自上述主表面飛濺之上述純水之步驟；b)於上述第1狀態下，朝旋轉之上述基板之上述主表面供給將既定之有機溶劑與純水混合之混合液，並藉由上述外側杯部之上述內側面接取自上述主表面飛濺之上述混合液之步驟；c)於上述第1狀態下，朝旋轉之上述基板之上述主表面供給上述有機溶劑，並藉由上述外側杯部之上述內側面接取自上述主表面飛濺之上述有機溶劑之步驟；d)一面於上述主表面上保持覆蓋上述主表面之上述有機溶劑之液膜，一面藉由使上述內側杯部相對於上述基板相對地上昇而形成使上述內側杯部之內側面配置於上述基板之周圍之第2狀態之步驟；及e)於上述第2狀態下，藉由朝上述主表面供給比重較上述有機溶劑大之充填材溶液，而於上述主表面上充填上述充填材溶液之步驟。 A substrate processing method according to the present invention includes the steps of: a) rotating the upper end of the inner cup portion in a first state lower than an upper end of the outer cup portion, and rotating the substrate rotating mechanism The main surface of the substrate facing the upper surface is supplied with pure water, and the inner side surface of the outer cup portion receives the pure water splashed from the main surface; b) the first state is rotated a step of supplying a mixed liquid of a predetermined organic solvent and pure water to the main surface of the substrate, and picking up the mixed liquid splashed from the main surface by the inner side surface of the outer cup portion; c) in the first state And supplying the organic solvent to the main surface of the rotating substrate, and receiving the organic solvent splashed from the main surface by the inner side surface of the outer cup portion; d) maintaining a cover on the main surface The liquid film of the organic solvent on the main surface is formed such that the inner cup portion is relatively raised with respect to the substrate to form the inner side of the inner cup portion a step of disposing in a second state around the substrate; and e) in the second state, by filling the main surface with a filler solution having a larger specific gravity than the organic solvent, filling the main surface with the filling The step of the material solution.
根據本發明，可抑制純水朝內側杯部內之流入，防止充填材溶液與純水混合，並可抑制在充填材溶液之供給前之圖案要素之倒塌。 According to the present invention, the inflow of pure water into the inner cup portion can be suppressed, the filling material solution can be prevented from being mixed with the pure water, and the collapse of the pattern element before the supply of the filling material solution can be suppressed.
本發明之一較佳形態中，上述基板處理裝置更具備有與上述主表面對向之噴嘴，在上述a)步驟中自上述噴嘴吐出上述純水、在上述b)步驟中自上述噴嘴吐出上述混合液、及在上述c)步驟中自上述噴嘴吐出上述有機溶劑。 In a preferred embodiment of the present invention, the substrate processing apparatus further includes a nozzle facing the main surface, wherein the pure water is discharged from the nozzle in the step a), and the nozzle is discharged from the nozzle in the step b) The mixed solution and the organic solvent are discharged from the nozzle in the step c).
該情況下，較佳為，於上述b)步驟中逐漸升高上述混合液中之上述有機溶劑之濃度。 In this case, it is preferred that the concentration of the organic solvent in the mixed liquid is gradually increased in the step b).
本發明之另一較佳形態中，自固定於較上述主表面更靠上方之既定位置之固定噴嘴，至少吐出上述混合液，與來自上述固定噴嘴之吐出動作同步，使被利用於上述a)步驟之上述純水之供給、或較上述a)步驟更靠前之處理液之供給的第1噴嘴，自與上述主表面對向之位置朝自上述主表面之上方遠離之待機位置移動，並且，使配置於自上述主表面之上方遠離之另一待機位置之第2噴嘴，朝與上述主表面對向之位置移動，於上述c)步驟中自上述第2噴嘴吐出上述有機溶劑。 According to another preferred embodiment of the present invention, at least a fixed nozzle fixed at a predetermined position above the main surface discharges the mixed liquid, and is used in synchronization with the discharge operation from the fixed nozzle to be used in the above a) The first nozzle of the supply of the pure water in the step or the supply of the treatment liquid before the step a) is moved from a position facing the main surface toward a standby position away from the upper surface of the main surface, and The second nozzle disposed at another standby position away from the main surface is moved toward a position facing the main surface, and the organic solvent is discharged from the second nozzle in the step c).
本發明之另一基板處理方法，其包含以下之步驟：a)於將上述內側杯部之上端配置於較上述外側杯部之上端更靠下方之第1狀態下，自固定於較上述主表面更靠上方之既定位置之固定噴嘴，連續地朝藉由基板旋轉機構而旋轉之上述基板之朝向上方之上述主表面供給純水，並藉由上述外側杯部之內側面接取自上述主表面飛濺之上述純水之步驟；b)與上述a)步驟同步，使被利用於較上述a)步驟更靠前之處理液之供給的第1噴嘴，自與上述主表面對 向之位置朝自上述主表面之上方遠離之待機位置移動，並且，使配置於自上述主表面之上方遠離之另一待機位置之第2噴嘴，朝與上述主表面對向之位置移動之步驟；c)於上述第1狀態下，自上述第2噴嘴朝旋轉之上述基板之上述主表面供給既定之有機溶劑，並藉由上述外側杯部之上述內側面接取自上述主表面飛濺之上述有機溶劑之步驟；d)一面於上述主表面上保持覆蓋上述主表面之上述有機溶劑之液膜，一面藉由使上述內側杯部相對於上述基板相對地上昇而形成使上述內側杯部之內側面配置於上述基板之周圍之第2狀態之步驟；及e)於上述第2狀態下，藉由朝上述主表面供給比重較上述有機溶劑大之充填材溶液，而於上述主表面上充填上述充填材溶液之步驟。 Another substrate processing method according to the present invention includes the steps of: a) self-fixing to the main surface in a first state in which the upper end of the inner cup portion is disposed below the upper end of the outer cup portion; a fixed nozzle at a predetermined position above, continuously supplying pure water to the main surface facing upward of the substrate rotated by the substrate rotating mechanism, and splashing from the main surface by the inner side surface of the outer cup portion The step of purifying the pure water; b) synchronizing with the step a), the first nozzle used for the supply of the treatment liquid which is used earlier than the step a), from the main surface pair a step of moving the position toward the standby position away from the upper surface of the main surface, and moving the second nozzle disposed at another standby position away from the main surface toward the position facing the main surface (c) supplying the predetermined organic solvent to the main surface of the substrate that is rotated from the second nozzle in the first state, and the organic surface splashed from the main surface by the inner side surface of the outer cup portion a step of a solvent; d) forming a liquid film covering the organic solvent on the main surface on the main surface, and forming an inner side surface of the inner cup portion by relatively raising the inner cup portion relative to the substrate a step of disposing in a second state around the substrate; and e) in the second state, by filling the main surface with a filler solution having a larger specific gravity than the organic solvent, filling the main surface with the filling The step of the material solution.
本發明還著眼於一種基板處理裝置。基板處理裝置，其包含：基板保持部，其於使形成有圖案之基板之主表面朝向上方的狀態下保持上述基板；基板旋轉機構，其使上述基板保持部與上述基板一同旋轉；外側杯部，其圍繞於上述基板之周圍；內側杯部，其配置於上述外側杯部之內側；升降機構，其使上述內側杯部相對於上述基板相對地升降；純水供給部，其朝上述主表面供給純水；混合液供給部，其朝上述主表面供給將既定之有機溶劑與純水混合之混合液；有機溶劑供給部，其朝上述主表面供給上述有機溶劑；充填材溶液供給部，其朝上述主表面供給比重較上述有機溶劑大之充填材溶液；及控制部，其於將上述內側杯部之上端配置於較上述外側杯部之上端更靠下方之第1狀態下，一面藉由上述純水供給部、上述混合液供給部及上述有機溶劑供給部，朝藉由上述基板旋轉機構而旋轉之上述基板之上述主表面，依序供給上述純水、上述 混合液及上述有機溶劑，一面藉由上述外側杯部之內側面接取自上述主表面飛濺之液體，然後，一面於上述主表面上保持覆蓋上述主表面之上述有機溶劑之液膜，一面藉由上述升降機構使上述內側杯部相對於上述基板相對地上昇而形成使上述內側杯部之內側面配置於上述基板之周圍之第2狀態，於上述第2狀態下，藉由上述充填材溶液供給部朝上述主表面供給上述充填材溶液，而於上述主表面上充填上述充填材溶液。 The present invention also focuses on a substrate processing apparatus. The substrate processing apparatus includes: a substrate holding portion that holds the substrate while a main surface of the substrate on which the pattern is formed faces upward; a substrate rotating mechanism that rotates the substrate holding portion together with the substrate; and an outer cup portion Surrounding the periphery of the substrate; the inner cup portion is disposed inside the outer cup portion; the lifting mechanism is configured to raise and lower the inner cup portion relative to the substrate; and the pure water supply portion faces the main surface Supplying pure water; a mixed liquid supply unit that supplies a mixed liquid in which a predetermined organic solvent and pure water are mixed to the main surface; an organic solvent supply unit that supplies the organic solvent to the main surface; and a filling material solution supply unit. a filling material solution having a larger specific gravity than the organic solvent is supplied to the main surface; and a control unit is disposed in a first state in which the upper end of the inner cup portion is disposed below the upper end of the outer cup portion The pure water supply unit, the mixed liquid supply unit, and the organic solvent supply unit are rotated upward by the substrate rotating mechanism Providing the above-mentioned main surface of the substrate, sequentially supplying the above pure water, the above The mixed solution and the organic solvent are obtained by picking up a liquid splashed from the main surface by the inner side surface of the outer cup portion, and then holding the liquid film covering the organic solvent on the main surface on the main surface while The elevating mechanism raises the inner cup portion relative to the substrate to form a second state in which the inner side surface of the inner cup portion is disposed around the substrate, and is supplied by the filling material solution in the second state. The filling solution is supplied to the main surface, and the filling solution is filled on the main surface.
上述之目的及其他目的、特徵、形式及長處，藉由參照所附圖式且以下進行之本發明的詳細說明，自可明瞭。 The above and other objects, features, aspects and advantages of the present invention will become apparent from
1、1a‧‧‧基板處理裝置 1, 1a‧‧‧ substrate processing device
5‧‧‧艙體 5‧‧‧ cabin
9‧‧‧基板 9‧‧‧Substrate
10‧‧‧控制部 10‧‧‧Control Department
21‧‧‧旋轉馬達 21‧‧‧Rotary motor
22‧‧‧旋轉吸盤 22‧‧‧Rotating suction cup
23‧‧‧杯單元 23‧‧‧ cup unit
24‧‧‧內側杯部 24‧‧‧ inside cup
25‧‧‧外側杯部 25‧‧‧Outer cup
26‧‧‧防濺部升降機構 26‧‧‧ splash guard lifting mechanism
31‧‧‧第1噴嘴 31‧‧‧1st nozzle
32‧‧‧第2噴嘴 32‧‧‧2nd nozzle
32a‧‧‧第3噴嘴 32a‧‧‧3rd nozzle
33‧‧‧第1噴嘴移動機構 33‧‧‧1st nozzle moving mechanism
34‧‧‧第2噴嘴移動機構 34‧‧‧2nd nozzle moving mechanism
34a‧‧‧第2‧第3噴嘴移動機構 34a‧‧‧2‧3rd nozzle moving mechanism
35‧‧‧固定噴嘴 35‧‧‧Fixed nozzle
41‧‧‧藥液供給部 41‧‧‧Drug supply department
42‧‧‧純水供給部 42‧‧‧Pure Water Supply Department
43‧‧‧有機溶劑供給部 43‧‧‧Organic solvent supply department
44‧‧‧充填材溶液供給部 44‧‧‧Filling solution supply department
45‧‧‧連接部 45‧‧‧Connecting Department
50‧‧‧封閉空間 50‧‧‧closed space
51‧‧‧艙體底部 51‧‧‧Bottom of the cabin
52‧‧‧艙體上底部 52‧‧‧Bottom of the cabin
53‧‧‧艙體內側壁部 53‧‧‧ Side wall of the cabin
54‧‧‧艙體外側壁部 54‧‧‧ cabin outer wall
55‧‧‧艙體頂蓋部 55‧‧‧Cable body cover
91‧‧‧(基板之)上面 91‧‧‧(substrate) above
221‧‧‧軸 221‧‧‧Axis
230‧‧‧取液部 230‧‧‧liquid intake
231‧‧‧基部 231‧‧‧ base
232‧‧‧環狀底部 232‧‧‧ring bottom
233‧‧‧內側周壁部 233‧‧‧The inner peripheral wall
234‧‧‧外側周壁部 234‧‧‧Outer peripheral wall
241‧‧‧內側防濺部 241‧‧‧Inside splash guard
242‧‧‧卡合部 242‧‧‧Care Department
243‧‧‧內側排液管路 243‧‧‧Internal drain line
249‧‧‧上部 249‧‧‧ upper
251‧‧‧外側防濺部 251‧‧‧Outside splash guard
252‧‧‧卡合部 252‧‧‧Care Department
253‧‧‧外側排液管路 253‧‧‧Outside drain line
331‧‧‧臂 331‧‧‧ Arm
450‧‧‧開閉閥 450‧‧‧Opening and closing valve
451‧‧‧流量控制閥 451‧‧‧Flow control valve
452‧‧‧開閉閥 452‧‧‧Opening and closing valve
453‧‧‧流量控制閥 453‧‧‧Flow control valve
454‧‧‧開閉閥 454‧‧‧Opening valve
459‧‧‧開閉閥 459‧‧‧Opening valve
461‧‧‧開閉閥 461‧‧‧Opening and closing valve
471、472‧‧‧開閉閥 471, 472‧‧‧Open valve
473‧‧‧開閉閥 473‧‧‧Opening and closing valve
475‧‧‧開閉閥 475‧‧‧Opening and closing valve
476‧‧‧開閉閥 476‧‧‧Opening and closing valve
541‧‧‧搬出入口 541‧‧‧ moving out of the entrance
542‧‧‧蓋部 542‧‧‧ Cover
911‧‧‧液膜 911‧‧‧ liquid film
J1‧‧‧中心軸 J1‧‧‧ central axis
圖1為顯示基板處理裝置之構成之圖。 Fig. 1 is a view showing the configuration of a substrate processing apparatus.
圖2為顯示基板之處理流程之圖。 2 is a view showing a processing flow of a substrate.
圖3為顯示基板處理裝置之剖視圖。 3 is a cross-sectional view showing a substrate processing apparatus.
圖4為顯示基板處理裝置之剖視圖。 4 is a cross-sectional view showing a substrate processing apparatus.
圖5為用以說明比較例之處理之圖。 Fig. 5 is a view for explaining processing of a comparative example.
圖6為用以說明比較例之處理之圖。 Fig. 6 is a view for explaining the processing of a comparative example.
圖7為顯示基板處理裝置之另一例之圖。 Fig. 7 is a view showing another example of the substrate processing apparatus.
圖8為顯示基板之處理之一部分流程之圖。 Fig. 8 is a view showing a part of the flow of processing of the substrate.
圖9為顯示基板處理裝置之剖視圖。 Fig. 9 is a cross-sectional view showing the substrate processing apparatus.
圖10為顯示基板處理裝置之剖視圖。 Figure 10 is a cross-sectional view showing the substrate processing apparatus.
圖11為顯示混合液中之有機溶劑之濃度、及混合液與純水之溶解性的關係之圖。 Fig. 11 is a graph showing the relationship between the concentration of the organic solvent in the mixed solution and the solubility of the mixed solution and pure water.
圖12為顯示混合液中之有機溶劑之濃度、及混合液與純水之 溶解性的關係之圖。 Figure 12 is a graph showing the concentration of the organic solvent in the mixed solution, and the mixed solution and pure water. A diagram of the relationship of solubility.
圖1為顯示本發明之一實施形態的基板處理裝置1之構成之圖。基板處理裝置1之各構成要素，係藉由控制部10所控制。基板處理裝置1具備旋轉吸盤22、旋轉馬達21、杯單元23及艙體5。圓板狀之基板9，係載置於基板保持部即旋轉吸盤22上。旋轉吸盤22係藉由吸引吸附基板9之下面，以水平之姿勢保持基板9。以下之說明中，將朝向上方之基板9之主表面91稱為「上面91」。於上面91形成有既定之圖案，該圖案包含例如直立之多個圖案要素。 Fig. 1 is a view showing the configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. The components of the substrate processing apparatus 1 are controlled by the control unit 10. The substrate processing apparatus 1 includes a rotary chuck 22, a rotary motor 21, a cup unit 23, and a cabin 5. The disk-shaped substrate 9 is placed on the spin chuck 22 which is a substrate holding portion. The spin chuck 22 holds the substrate 9 in a horizontal posture by sucking the lower surface of the adsorption substrate 9. In the following description, the main surface 91 of the substrate 9 facing upward is referred to as "upper surface 91". A predetermined pattern is formed on the upper surface 91, and the pattern includes, for example, a plurality of pattern elements standing upright.
於旋轉吸盤22連接有朝上下方向(鉛垂方向)延伸之軸221。軸221係垂直於基板9之上面91，且軸221之中心軸J1，係通過基板9之中心。基板旋轉機構即旋轉馬達21，係使軸221旋轉。藉此，旋轉吸盤22及基板9，以朝向上下方向之中心軸J1為中心進行旋轉。 A shaft 221 extending in the vertical direction (vertical direction) is connected to the spin chuck 22 . The shaft 221 is perpendicular to the upper surface 91 of the substrate 9, and the central axis J1 of the shaft 221 passes through the center of the substrate 9. The rotation mechanism 21 of the substrate rotation mechanism rotates the shaft 221. Thereby, the chuck 22 and the substrate 9 are rotated to rotate about the central axis J1 in the vertical direction.
杯單元23具備取液部230、內側防濺部241、及外側防濺部251。取液部230具備基部231、環狀底部232、內側周壁部233、及外側周壁部234。基部231係以中心軸J1為中心之筒狀。基部231係嵌入後述之艙體內側壁部53，而被安裝於艙體內側壁部53之外側面。環狀底部232係以中心軸J1為中心之圓環板狀，且自基部231之下端部朝外側伸展。外側周壁部234及內側周壁部233，皆為以中心軸J1為中心之筒狀。外側周壁部234係自環狀底部232之外周部朝上方突出，內側周壁部233係於環狀底部232上且在基部231與外側周壁部234之間朝上方突出。基部231、環狀 底部232、內側周壁部233及外側周壁部234，較佳可作為一個構件而一體形成。 The cup unit 23 includes a liquid take-out portion 230, an inner splash guard portion 241, and an outer splash guard portion 251. The liquid take-out portion 230 includes a base portion 231 , an annular bottom portion 232 , an inner peripheral wall portion 233 , and an outer peripheral wall portion 234 . The base portion 231 has a cylindrical shape centering on the central axis J1. The base portion 231 is fitted into the cabin inner side wall portion 53 to be described later, and is attached to the outer side surface of the cabin inner side wall portion 53. The annular bottom portion 232 has an annular plate shape centering on the central axis J1 and extends outward from the lower end portion of the base portion 231. Each of the outer peripheral wall portion 234 and the inner peripheral wall portion 233 has a cylindrical shape centering on the central axis J1. The outer peripheral wall portion 234 protrudes upward from the outer peripheral portion of the annular bottom portion 232, and the inner peripheral wall portion 233 is attached to the annular bottom portion 232 and protrudes upward between the base portion 231 and the outer peripheral wall portion 234. Base 231, ring The bottom portion 232, the inner peripheral wall portion 233, and the outer peripheral wall portion 234 are preferably integrally formed as one member.
內側防濺部241及外側防濺部251，皆為以中心軸J1為中心之大致圓筒狀之構件，且圍繞於旋轉吸盤22之周圍。內側防濺部241，係配置於外側防濺部251與旋轉吸盤22之間。於內側防濺部241之下部設置有在與內側周壁部233之間形成微小間隙的卡合部242。卡合部242與內側周壁部233，係被維持非接觸狀態。內側防濺部241，係藉由防濺部升降機構26而可在上下方向移動。於外側防濺部251之下部也設置有卡合部252，在卡合部252與外側周壁部234之間形成有微小之間隙。卡合部252與外側周壁部234，係被維持非接觸狀態。外側防濺部251，也藉由防濺部升降機構26而可與內側防濺部241分別在上下方向移動。 Each of the inner splash guard portion 241 and the outer splash guard portion 251 is a substantially cylindrical member centered on the central axis J1 and surrounds the periphery of the spin chuck 22 . The inner splash guard 241 is disposed between the outer splash guard 251 and the spin chuck 22 . An engaging portion 242 that forms a minute gap with the inner peripheral wall portion 233 is provided at a lower portion of the inner splash guard portion 241. The engaging portion 242 and the inner peripheral wall portion 233 are maintained in a non-contact state. The inner splash guard 241 is movable in the vertical direction by the splash guard lifting mechanism 26. An engaging portion 252 is also provided at a lower portion of the outer splash guard portion 251, and a minute gap is formed between the engaging portion 252 and the outer peripheral wall portion 234. The engaging portion 252 and the outer peripheral wall portion 234 are maintained in a non-contact state. The outer splash guard 251 is also movable in the vertical direction by the inner splash guard 241 by the splash guard elevating mechanism 26.
於外側防濺部251與基板9在水平方向直接對向之狀態下，若朝旋轉之基板9之上面91供給處理液，則自該上面91飛濺之該處理液，藉由外側防濺部251所接取。該處理液係於環狀底部232，貯留在內側周壁部233與外側周壁部234之間的區域，且經由設置於該區域之外側排液管路253朝外部排出。於杯單元23中，藉由包含外側周壁部234之取液部230之一部分、及外側防濺部251，構成圍繞在基板9之周圍之外側杯部25。 When the outer splash guard 251 and the substrate 9 are directly opposed to each other in the horizontal direction, when the processing liquid is supplied to the upper surface 91 of the rotating substrate 9, the processing liquid splashed from the upper surface 91 is shielded by the outer splash portion 251. Received. This treatment liquid is stored in the annular bottom portion 232, and is stored in a region between the inner peripheral wall portion 233 and the outer peripheral wall portion 234, and is discharged to the outside via the drain line 253 provided outside the region. In the cup unit 23, the outer cup portion 25 is formed around the periphery of the substrate 9 by a portion including the liquid take-out portion 230 of the outer peripheral wall portion 234 and the outer splash guard portion 251.
此外，於內側防濺部241與基板9在水平方向直接對向之狀態下(參照後述之圖4)，若朝旋轉之基板9之上面91供給處理液，則自該上面91飛濺之該處理液，藉由內側防濺部241所接取。該處理液係於環狀底部232，貯留在基部231與內側周壁部233之間的區域，且經由設置於該區域之內側排液管路243朝外部排 出。於杯單元23中，藉由包含內側周壁部233之取液部230之一部分、及內側防濺部241，構成配置於外側杯部25之內側之內側杯部24。內側杯部24及外側杯部25，也可包含其他之構成要素。於基板處理裝置1中，也可設置包含內側杯部24及外側杯部25之3個以上之杯部。 In the state in which the inner splash guard 241 and the substrate 9 are directly opposed to each other in the horizontal direction (see FIG. 4 described later), when the processing liquid is supplied to the upper surface 91 of the rotating substrate 9, the processing is splashed from the upper surface 91. The liquid is taken up by the inner splash guard 241. The treatment liquid is attached to the annular bottom portion 232, and is stored in a region between the base portion 231 and the inner peripheral wall portion 233, and is discharged to the outside via the inner drain line 243 provided in the region. Out. In the cup unit 23, the inner cup portion 24 disposed inside the outer cup portion 25 is constituted by a portion including the liquid take-out portion 230 of the inner peripheral wall portion 233 and the inner splash guard portion 241. The inner cup portion 24 and the outer cup portion 25 may include other constituent elements. In the substrate processing apparatus 1, three or more cup portions including the inner cup portion 24 and the outer cup portion 25 may be provided.
艙體5具備艙體底部51、艙體上底部52、艙體內側壁部53、艙體外側壁部54、及艙體頂蓋部55。艙體底部51係為板狀，且覆蓋旋轉馬達21及杯單元23之下方。艙體上底部52，係以中心軸J1為中心之大致圓環板狀。艙體上底部52，係於艙體底部51之上方，覆蓋旋轉馬達21之上方，並覆蓋旋轉吸盤22之下方。艙體內側壁部53係以中心軸J1為中心之大致圓筒狀。艙體內側壁部53，係自艙體上底部52之外周部朝下方延伸至艙體底部51。艙體內側壁部53，係位於杯單元23之徑向內側。 The cabin 5 is provided with a cabin bottom 51, a cabin upper bottom 52, a cabin inner side wall portion 53, a cabin outer side wall portion 54, and a cabin top cover portion 55. The nacelle bottom 51 is plate-shaped and covers the lower side of the rotary motor 21 and the cup unit 23. The upper bottom portion 52 of the cabin has a substantially annular plate shape centered on the central axis J1. The upper bottom portion 52 of the cabin is above the nacelle bottom 51, overlying the rotary motor 21 and covering the lower portion of the rotary suction cup 22. The cabin inner side wall portion 53 has a substantially cylindrical shape centering on the central axis J1. The cabin inner side wall portion 53 extends downward from the outer peripheral portion of the cabin upper bottom portion 52 to the cabin bottom portion 51. The cabin inner side wall portion 53 is located radially inward of the cup unit 23.
艙體外側壁部54係大致筒狀，且位於杯單元23之徑向外側。艙體外側壁部54，係自艙體底部51之外周部朝上方延伸至艙體頂蓋部55之外周部。艙體頂蓋部55係為板狀，且覆蓋杯單元23及旋轉吸盤22之上方。於艙體外側壁部54設置有用以將基板9搬入及搬出艙體5內之搬出入口541。搬出入口541係藉由蓋部542而被封閉，艙體5之內部空間成為封閉空間50。 The cabin outer wall portion 54 is substantially cylindrical and located radially outward of the cup unit 23. The outer casing side wall portion 54 extends upward from the outer peripheral portion of the nacelle bottom portion 51 to the outer peripheral portion of the cabin top cover portion 55. The cabin top cover portion 55 is plate-shaped and covers the upper of the cup unit 23 and the rotary suction cup 22. A carry-out port 541 for loading and unloading the substrate 9 into and out of the cabin 5 is provided in the cabin outer wall portion 54. The carry-out port 541 is closed by the lid portion 542, and the internal space of the cabin 5 becomes the closed space 50.
基板處理裝置1還具備第1噴嘴31、第2噴嘴32、第1噴嘴移動機構33、第2噴嘴移動機構34、藥液供給部41、純水供給部42、有機溶劑供給部43、及充填材溶液供給部44。第1噴嘴31例如為朝上下方向延伸之直管式噴嘴，且被安裝於第1噴嘴移動機構33之臂331。第1噴嘴移動機構33，藉由使臂331以 平行於中心軸J1之軸為中心進行轉動，選擇性地將第1噴嘴31配置於與基板9之上面91對向之對向位置、及自上面91之上方遠離之待機位置。配置於對向位置之第1噴嘴31，係與上面91之中央部對向。待機位置係於水平方向上自基板9分離之位置。第1噴嘴移動機構33，也可於上下方向升降臂331。第2噴嘴移動機構34，係與第1噴嘴移動機構33相同之構造，且也可藉由第2噴嘴移動機構34，選擇性地將第2噴嘴32配置於與基板9之上面91對向之對向位置、及自上面91之上方遠離之另一待機位置。 The substrate processing apparatus 1 further includes a first nozzle 31, a second nozzle 32, a first nozzle moving mechanism 33, a second nozzle moving mechanism 34, a chemical liquid supply unit 41, a pure water supply unit 42, an organic solvent supply unit 43, and a filling. Material solution supply unit 44. The first nozzle 31 is, for example, a straight tube nozzle that extends in the vertical direction, and is attached to the arm 331 of the first nozzle moving mechanism 33. The first nozzle moving mechanism 33 is configured by the arm 331 Rotation is performed centering on the axis parallel to the central axis J1, and the first nozzle 31 is selectively disposed at a position opposite to the upper surface 91 of the substrate 9 and a standby position away from the upper side of the upper surface 91. The first nozzle 31 disposed at the opposite position is opposed to the central portion of the upper surface 91. The standby position is a position separated from the substrate 9 in the horizontal direction. The first nozzle moving mechanism 33 may also raise and lower the arm 331 in the vertical direction. The second nozzle moving mechanism 34 has the same structure as the first nozzle moving mechanism 33, and the second nozzle moving mechanism 34 selectively disposes the second nozzle 32 on the upper surface 91 of the substrate 9. The opposite position and another standby position away from above 91.
藥液供給部41，係經由開閉閥450而連接於連接部45。純水供給部42，係經由流量控制閥451及開閉閥452而連接於連接部45，有機溶劑供給部43，係經由流量控制閥453及開閉閥454而連接於連接部45。也可於藥液供給部41與連接部45之間設置流量控制閥。連接部45係經由開閉閥459而連接於第1噴嘴31。例如，藉由連接部45及靠近連接部45而設置之複數個開閉閥450、452、454、459，構成一個多通道閥裝置(混合閥)。充填材溶液供給部44，係經由開閉閥461而連接於第2噴嘴32。藉由藥液供給部41、純水供給部42、有機溶劑供給部43及充填材溶液供給部44，分別朝基板9之上面91供給處理液即藥液、純水、有機溶劑及充填材溶液。 The chemical solution supply unit 41 is connected to the connection unit 45 via the opening and closing valve 450. The pure water supply unit 42 is connected to the connection unit 45 via the flow rate control valve 451 and the opening and closing valve 452, and the organic solvent supply unit 43 is connected to the connection unit 45 via the flow rate control valve 453 and the opening and closing valve 454. A flow rate control valve may be provided between the chemical supply unit 41 and the connection unit 45. The connection portion 45 is connected to the first nozzle 31 via the opening and closing valve 459. For example, a plurality of opening and closing valves 450, 452, 454, and 459 provided by the connecting portion 45 and the connecting portion 45 constitute a multi-channel valve device (mixing valve). The filling solution supply unit 44 is connected to the second nozzle 32 via the opening and closing valve 461. The chemical liquid supply unit 41, the pure water supply unit 42, the organic solvent supply unit 43, and the filling material supply unit 44 supply the chemical liquid, the pure water, the organic solvent, and the filling solution to the upper surface 91 of the substrate 9, respectively. .
圖2為顯示基板處理裝置1之基板9之處理流程之圖。首先，藉由外部之搬送機構將未處理之基板9經由搬出入口541搬入艙體5內，且以旋轉吸盤22進行保持(步驟S11)。於基板9之搬入時，藉由防濺部升降機構26使內側防濺部241及外側防濺部251下降，防止搬入之基板9接觸於兩者(於後述之基板9之搬出中 也相同)。搬送機構朝艙體5外移動之後，藉由蓋部542將搬出入口541封閉。 FIG. 2 is a view showing a processing flow of the substrate 9 of the substrate processing apparatus 1. First, the unprocessed substrate 9 is carried into the cabin 5 via the carry-out port 541 by an external transport mechanism, and held by the spin chuck 22 (step S11). When the substrate 9 is carried in, the inner splash guard 241 and the outer splash guard 251 are lowered by the splash-proof portion elevating mechanism 26, and the loaded substrate 9 is prevented from coming into contact with each other (in the case of the substrate 9 to be described later) The same). After the transport mechanism moves outside the cabin 5, the carry-out port 541 is closed by the lid portion 542.
接著，外側防濺部251上昇至圖1所示之位置，將外側防濺部251之上端配置於較基板9靠上方。此外，內側防濺部241之上端，係位於較基板9靠下方。藉此，形成將內側杯部24之上端配置於較外側杯部25之上端靠下方之外側杯對向狀態(步驟S12)。於外側杯對向狀態下，外側防濺部251與基板9在水平方向直接對向。 Next, the outer splash guard 251 is raised to the position shown in FIG. 1, and the upper end of the outer splash guard 251 is disposed above the substrate 9. Further, the upper end of the inner splash guard 241 is located below the substrate 9. Thereby, the upper end of the inner cup portion 24 is placed on the outer side of the outer cup portion 25, and the outer cup is opposed to the outer side (step S12). In the opposing state of the outer cup, the outer splash guard 251 directly faces the substrate 9 in the horizontal direction.
藉由第1噴嘴移動機構33，將第1噴嘴31配置於與基板9之上面91之中央部對向之對向位置，且藉由旋轉馬達21以既定之轉速(旋轉速度)開始基板9之旋轉。然後，藉由開啟開閉閥450，朝連接部45之內部空間供給藥液，且藉由開啟開閉閥459而使藥液經由第1噴嘴31連續地供給於上面91(步驟S13)。上面91上之藥液，藉由基板9之旋轉而朝外緣部擴散，如圖3中粗線所示，將藥液供給於上面91整體。此外，自外緣部飛濺之藥液，藉由外側杯部25之內側面接取而被回收。藥液例如為包含稀釋氫氟酸(DHF)或氨水之洗淨液。藥液也可為被利用於基板9上之氧化膜之除去或顯影、或蝕刻等洗淨以外之處理者。藥液之供給繼續既定時間後，藉由關閉開閉閥450而被停止。於藥液之處理中，第1噴嘴31也可藉由圖1之第1噴嘴移動機構33而於水平方向擺動。 By the first nozzle moving mechanism 33, the first nozzle 31 is disposed at a position opposed to the center portion of the upper surface 91 of the substrate 9, and the substrate 9 is started by the rotary motor 21 at a predetermined number of rotations (rotation speed). Rotate. Then, the chemical liquid is supplied to the internal space of the connecting portion 45 by opening the opening and closing valve 450, and the chemical liquid is continuously supplied to the upper surface 91 via the first nozzle 31 by opening the opening and closing valve 459 (step S13). The chemical solution on the upper surface 91 is diffused toward the outer edge portion by the rotation of the substrate 9, and the chemical liquid is supplied to the entire upper surface 91 as indicated by a thick line in Fig. 3 . Further, the chemical liquid splashed from the outer edge portion is recovered by the inner side surface of the outer cup portion 25. The chemical solution is, for example, a washing solution containing diluted hydrofluoric acid (DHF) or ammonia water. The chemical liquid may be a process other than the removal or development of the oxide film used on the substrate 9, or the cleaning other than etching. The supply of the chemical liquid is stopped after the predetermined time has elapsed by closing the opening and closing valve 450. In the processing of the chemical liquid, the first nozzle 31 can be swung in the horizontal direction by the first nozzle moving mechanism 33 of Fig. 1 .
若完成藥液之處理後，藉由開啟開閉閥452，朝連接部45之內部空間供給沖洗液即純水，純水經由第1噴嘴31被連續地供給於上面91(步驟S14)。藉此，進行藉由純水沖洗上面91上之藥液之沖洗處理。於沖洗處理中，上面91整體藉由純水所覆蓋。 於純水之供給中，仍藉由旋轉馬達21以較高之轉速繼續基板9之旋轉(於後述之混合液及有機溶劑之供給時也相同)。此外，維持外側杯對向狀態，自基板9飛濺之純水，藉由外側杯部25之內側面接取後，被排出於外部。 When the opening and closing valve 452 is opened, pure water which is a flushing liquid is supplied to the internal space of the connecting portion 45, and the pure water is continuously supplied to the upper surface 91 via the first nozzle 31 (step S14). Thereby, the rinsing treatment of the liquid medicine on the upper surface 91 by pure water is performed. In the rinsing process, the upper surface 91 is entirely covered with pure water. In the supply of the pure water, the rotation of the substrate 9 is continued at a higher rotation speed by the rotary motor 21 (the same applies to the supply of the mixed liquid and the organic solvent to be described later). Further, the pure water splashed from the substrate 9 is maintained in the opposing state of the outer cup, and is taken out by the inner side surface of the outer cup portion 25, and then discharged to the outside.
若純水之供給被繼續既定時間，則維持開啟開閉閥452之狀態不變，將開閉閥454開啟。藉此，有機溶劑也與純水一同被供給於連接部45之內部空間，且於連接部45中生成將有機溶劑與純水混合之混合液(稀釋有機溶劑)。有機溶劑例如為IPA(異丙醇)、甲醇、乙醇、丙酮等，且表面張力較純水低。本實施形態中，作為有機溶劑，係利用IPA。 When the supply of the pure water is continued for a predetermined period of time, the state in which the opening and closing valve 452 is opened is maintained, and the opening and closing valve 454 is opened. Thereby, the organic solvent is supplied to the internal space of the connection portion 45 together with the pure water, and a mixed liquid (diluted organic solvent) in which the organic solvent and the pure water are mixed is formed in the connection portion 45. The organic solvent is, for example, IPA (isopropyl alcohol), methanol, ethanol, acetone or the like, and the surface tension is lower than that of pure water. In the present embodiment, IPA is used as the organic solvent.
混合液經由第1噴嘴31被連續地供給於上面91，且自基板9飛濺之混合液，藉由外側杯部25之內側面所接取(步驟S15)。此時，控制部10藉由控制連接於有機溶劑供給部43之流量控制閥453之開度、及連接於純水供給部42之流量控制閥451之開度，調整有機溶劑與純水之混合比、即混合液中之有機溶劑之濃度。於本實施形態中，自有機溶劑供給部43朝連接部45之有機溶劑之供給流量，係被逐漸(階段性地)增大。此外，自純水供給部42朝連接部45之純水之供給流量，係被逐漸降低。因此，於步驟S15中，供給於上面91之混合液之有機溶劑之濃度，係自0%左右逐漸升高至100%左右。再者，也可於第1噴嘴31與連接部45之間設置管路混合器(In-Line mixer)等。 The mixed liquid is continuously supplied to the upper surface 91 via the first nozzle 31, and the mixed liquid splashed from the substrate 9 is picked up by the inner side surface of the outer cup portion 25 (step S15). At this time, the control unit 10 adjusts the opening degree of the flow rate control valve 453 connected to the organic solvent supply unit 43 and the opening degree of the flow rate control valve 451 connected to the pure water supply unit 42, thereby adjusting the mixing of the organic solvent and the pure water. Ratio, that is, the concentration of the organic solvent in the mixed solution. In the present embodiment, the supply flow rate of the organic solvent from the organic solvent supply unit 43 to the connection portion 45 is gradually increased (stagewise). Further, the supply flow rate of the pure water from the pure water supply unit 42 toward the connection portion 45 is gradually lowered. Therefore, in step S15, the concentration of the organic solvent supplied to the mixed liquid of the upper surface 91 is gradually increased from about 0% to about 100%. Further, an in-line mixer or the like may be provided between the first nozzle 31 and the connecting portion 45.
若自純水供給部42朝連接部45供給之純水的供給流量變為0，而變得無朝連接部45之純水之供給，則僅有機溶劑(純粹之有機溶劑)經由第1噴嘴31被連續地供給於上面91(步驟 S16)。藉此，上面91整體全部藉由有機溶劑覆蓋。自基板9飛濺之有機溶劑，藉由外側杯部25之內側面所接取。 When the supply flow rate of the pure water supplied from the pure water supply unit 42 to the connection unit 45 becomes 0, and there is no supply of pure water to the connection unit 45, only the organic solvent (pure organic solvent) passes through the first nozzle. 31 is continuously supplied to the above 91 (step S16). Thereby, the entire upper surface 91 is entirely covered with an organic solvent. The organic solvent splashed from the substrate 9 is taken up by the inner side surface of the outer cup portion 25.
若自僅為有機溶劑之供給開始經過既定時間，則使基板9之轉速降低、或者停止基板9之旋轉。此外，有機溶劑之供給也藉由流量控制閥453而被停止。藉此，形成有覆蓋上面91整體之較厚之有機溶劑之液膜。液膜係覆蓋基板9之上面91整體之連續的層、即所謂積水狀之液膜。 When the predetermined time elapses from the supply of only the organic solvent, the rotation speed of the substrate 9 is lowered or the rotation of the substrate 9 is stopped. Further, the supply of the organic solvent is also stopped by the flow rate control valve 453. Thereby, a liquid film having a thick organic solvent covering the entire upper surface 91 is formed. The liquid film covers a continuous layer of the entire upper surface 91 of the substrate 9, that is, a so-called water-like liquid film.
此外，藉由防濺部升降機構26使內側防濺部241自圖3所示之位置上昇至圖4所示之位置，以使外側防濺部251之上端、及內側防濺部241之上端兩者位於較基板9靠上方。藉此，形成將內側杯部24之內側面配置於基板9之周圍的內側杯對向狀態(步驟S17)。於內側杯對向狀態下，內側防濺部241與基板9在水平方向直接對向。 Further, the inner splash guard 241 is raised from the position shown in FIG. 3 to the position shown in FIG. 4 by the splash guard lifting mechanism 26 so that the upper end of the outer splash guard 251 and the upper end of the inner splash guard 241 are provided. Both are located above the substrate 9. Thereby, the inner cup facing state in which the inner side surface of the inner side cup portion 24 is disposed around the substrate 9 is formed (step S17). In the opposing state of the inner cup, the inner splash guard 241 and the substrate 9 directly face each other in the horizontal direction.
位於對向位置之第1噴嘴31，藉由第1噴嘴移動機構33朝自上面91之上方遠離之待機位置移動。此外，位於另一待機位置之第2噴嘴32，藉由第2噴嘴移動機構34朝與上面91之中央部對向之對向位置移動。於內側防濺部241上昇之期間、及交換第1噴嘴31與第2噴嘴32之期間，因於上面91上保持有有機溶劑之液膜，因此上面91不會乾燥。 The first nozzle 31 located at the opposite position moves toward the standby position away from the upper side of the upper surface 91 by the first nozzle moving mechanism 33. Further, the second nozzle 32 located at the other standby position is moved by the second nozzle moving mechanism 34 toward the opposite position to the central portion of the upper surface 91. While the inner splash guard 241 is rising and during the exchange of the first nozzle 31 and the second nozzle 32, since the liquid film of the organic solvent is held on the upper surface 91, the upper surface 91 is not dried.
接著，增大基板9之轉速，並藉由充填材溶液供給部44且經由第2噴嘴32朝上面91之中央部供給既定量之充填材溶液(步驟S18)。充填材溶液，例如包含丙烯酸樹脂等之聚合物。作為充填材溶液之溶媒，例示有乙醇等。充填材料係相對於該溶媒具有溶解性，例如，藉由加熱至既定溫度以上會產生交聯反應。 Next, the number of revolutions of the substrate 9 is increased, and a predetermined amount of the filler solution is supplied to the center portion of the upper surface 91 via the second nozzle 32 via the filling solution supply unit 44 (step S18). A filling solution, for example, a polymer containing an acrylic resin or the like. As a solvent of a filling material solution, ethanol etc. are illustrated. The filling material has solubility with respect to the solvent, and for example, a crosslinking reaction occurs by heating to a predetermined temperature or higher.
於完成充填材溶液之供給後，仍繼續既定時間基板9之旋轉。藉此，上面91上之充填材溶液自中央部朝外周部擴散，於上面91上之有機溶劑之液膜上形成充填材溶液之均勻之液層(圖4中，以粗線顯示此等液層)。於基板處理裝置1中，形成內側杯對向狀態，且自基板9飛濺之充填材溶液，係藉由內側杯部24之內側面所接取。此外，藉由充填材溶液之比重較有機溶劑之比重大，於上面91上將充填材溶液之液層與有機溶劑之液層互換。藉此，充填材溶液還進入相互鄰接之圖案要素之間(微小之間隙)，進而將充填材溶液充填於上面91上。再者，充填材溶液之供給時之基板9的轉速，例如較上述藥液、純水及有機溶劑之連續供給時之轉速小。也可於停止基板9之旋轉之狀態下，朝上面91供給充填材溶液，然後開始基板9之旋轉。 After the supply of the filling material solution is completed, the rotation of the substrate 9 is continued for a predetermined period of time. Thereby, the filling material solution on the upper surface 91 is diffused from the central portion toward the outer peripheral portion, and a uniform liquid layer of the filling material solution is formed on the liquid film of the organic solvent on the upper surface 91 (in FIG. 4, these liquids are shown by thick lines). Floor). In the substrate processing apparatus 1, the inner cup is opposed to each other, and the filling material splashed from the substrate 9 is taken up by the inner side surface of the inner cup portion 24. Further, by the ratio of the specific gravity of the filler solution to the organic solvent, the liquid layer of the filler solution is exchanged with the liquid layer of the organic solvent on the upper surface 91. Thereby, the filling material solution also enters between the mutually adjacent pattern elements (small gaps), and the filling material solution is further filled on the upper surface 91. Further, the number of revolutions of the substrate 9 at the time of supply of the filler solution is, for example, smaller than the number of revolutions when the above-mentioned chemical liquid, pure water, and organic solvent are continuously supplied. It is also possible to supply the filling material solution toward the upper surface 91 while stopping the rotation of the substrate 9, and then start the rotation of the substrate 9.
表面之有機溶劑之液層，藉由持續基板9之旋轉而被除去(spin-off)。於基板處理裝置1中，例如，也可在與基板9之上面91或下面之外緣部對向之位置設置輔助噴嘴，藉由自輔助噴嘴吐出有機溶劑，除去附著於基板9之外緣部之充填材溶液(邊緣沖洗)。外緣部之有機溶劑，係藉由基板9之旋轉而被除去(spin dry)。 The liquid layer of the organic solvent on the surface is spin-off by continuing the rotation of the substrate 9. In the substrate processing apparatus 1, for example, an auxiliary nozzle may be provided at a position opposite to the upper surface 91 of the substrate 9 or the lower edge portion, and the organic solvent may be ejected from the auxiliary nozzle to remove the outer edge portion of the substrate 9. Filling solution (edge rinse). The organic solvent in the outer edge portion is spin-dried by the rotation of the substrate 9.
若基板9之旋轉停止，則藉由外部之搬送機構，且經由圖1之搬出入口541將基板9搬出至艙體5外(步驟S19)。基板9藉由外部之熱板烘烤，而被除去充填材溶液之液層中之溶媒成分，並將充填材料硬化(固化)。亦即，於相鄰之圖案要素之間充填有固化之充填材料。然後，將基板9朝乾式蝕刻裝置搬送，藉由乾式蝕刻除去充填材料。 When the rotation of the substrate 9 is stopped, the substrate 9 is carried out to the outside of the cabin 5 via the carry-out port 541 of FIG. 1 by an external transfer mechanism (step S19). The substrate 9 is baked by an external hot plate to remove the solvent component in the liquid layer of the filling material solution, and the filling material is cured (cured). That is, a cured filling material is filled between adjacent pattern elements. Then, the substrate 9 is transferred to a dry etching apparatus, and the filling material is removed by dry etching.
此時，由於介入相鄰之圖案要素之間的介入物(充填 材料)係固體，因此可於介入物之表面張力不會作用於圖案要素之狀態下除去充填材料。沖洗處理之後之上述一系列的處理，可視作附著於上面91之純水(沖洗液)之乾燥處理，藉由該乾燥處理，防止因乾燥途中之純水之表面張力而引起之圖案要素之變形。充填材料之除去，也可藉由不使用液體之其他方法進行。例如，根據充填材料之種類，藉由於減壓狀態下將充填材料加熱，而進行利用充填材料之昇華之除去。 At this point, due to intervention between adjacent pattern elements (filling) The material is a solid, so that the filling material can be removed in a state where the surface tension of the interposer does not act on the pattern element. The above-mentioned series of treatments after the rinsing treatment can be regarded as a drying treatment of the pure water (flushing liquid) attached to the upper surface 91, and the drying treatment is performed to prevent deformation of the pattern elements caused by the surface tension of the pure water in the drying process. . The removal of the filling material can also be carried out by other methods without using a liquid. For example, the sublimation removal by the filling material is performed by heating the filling material under reduced pressure depending on the type of the filling material.
在此，對在純水之沖洗處理後，形成純水之液膜(亦即，進行純水積水)之比較例的處理進行說明。於比較例之處理中，藉由純水對基板9之上面91進行沖洗處理之後，將基板9之轉速及純水之供給流量減小，如圖5所示，於上面91上形成有較厚之純水之液膜911。此時，自上面91溢出之純水，落下於內側杯部24內。此外，純水之液膜911之形成，係自沖洗處理起被連續地進行，因此，基板9之轉速，係於大量之純水存在於上面91上之狀態下被降低。因此，純水有時也會附著於內側防濺部241之內側面之上部249。接著，朝上面91上供給有機溶劑，形成有機溶劑之液膜。此時，有機溶劑以進入純水之液膜911與基板9之上面91之間的方式擴散於上面91整體。於比較例之處理中，不進行混合液之供給。有機溶劑之供給後，如圖6所示，形成使內側杯部24之內側面配置於基板9之周圍之內側杯對向狀態。然後，將充填材溶液供給於上面91上。 Here, a treatment of a comparative example in which a liquid film of pure water (that is, pure water is accumulated) after the rinsing treatment of pure water will be described. In the treatment of the comparative example, after the rinsing treatment of the upper surface 91 of the substrate 9 by pure water, the rotation speed of the substrate 9 and the supply flow rate of the pure water are reduced, as shown in FIG. 5, a thicker layer is formed on the upper surface 91. Liquid film 911 of pure water. At this time, the pure water overflowing from the upper surface 91 falls in the inner cup portion 24. Further, since the formation of the liquid film 911 of pure water is continuously performed from the rinsing treatment, the rotation speed of the substrate 9 is lowered in a state where a large amount of pure water exists on the upper surface 91. Therefore, pure water sometimes adheres to the inner side surface portion 249 of the inner splash guard portion 241. Next, an organic solvent is supplied onto the upper surface 91 to form a liquid film of an organic solvent. At this time, the organic solvent is diffused on the entire upper surface 91 so as to pass between the liquid film 911 entering the pure water and the upper surface 91 of the substrate 9. In the treatment of the comparative example, the supply of the mixed liquid was not performed. After the supply of the organic solvent, as shown in FIG. 6, the inner side of the inner cup portion 24 is placed on the inner side of the substrate 9 in an opposed state. Then, the filling material solution is supplied onto the upper surface 91.
於比較例之處理中，於純水之液膜911之形成時落下於內側杯部24內之純水，係附著於內側杯部24之內側面等，且充填材溶液與該純水混合。因此，根據充填材溶液之種類，充填材溶 液有可能變成膠狀，而將設置於內側杯部24之內側排液管路243(參照圖1)堵塞。此外，附著於內側防濺部241之內側面的上部249之純水，也有可能落下於充填有充填材溶液之上面91上。 In the treatment of the comparative example, the pure water dropped in the inner cup portion 24 at the time of formation of the pure water liquid film 911 adheres to the inner side surface of the inner cup portion 24, and the filling material solution is mixed with the pure water. Therefore, depending on the type of the filling solution, the filling material dissolves. The liquid may be in a gel form, and may be clogged in the inner drain line 243 (see FIG. 1) provided in the inner cup portion 24. Further, the pure water adhering to the upper portion 249 of the inner side surface of the inner splash guard portion 241 may also fall on the upper surface 91 filled with the filling material solution.
此外，若假設其他之比較例的處理、即在圖2中將朝基板9供給混合液之步驟S15省去之處理，則於該其他之比較例之處理中，上面91上之圖案要素有可能會因有機溶劑之供給而倒塌。圖案要素倒塌之原因，雖不明確，但作為其中之一個原因，可列舉會產生僅極少地存在純水之局部區域之情形(亦即，可能對圖案要素產生表面張力之影響之僅存在極少之純水的區域，以下表現為「局部之乾燥」)。例如，供給於上面91之中央部之有機溶劑，係以將上面91上之純水(因基板9之高速旋轉而變為薄層)朝外側擠出之方式擴散、亦即有機溶劑係以有機溶劑與純水之界面自中央部附近朝外緣部移動之方式在上面91上擴散。此時起因於有機溶劑與純水之低溶解性(為兩者之混合容易度，也可視作親和性)、或有機溶劑與純水之表面張力之差，可能於兩者之界面產生上面91之局部之乾燥。若產生局部之乾燥，則圖案要素會因作用於圖案要素之表面張力之影響而倒塌。 Further, if the processing of the other comparative example, that is, the processing of the step S15 of supplying the mixed liquid to the substrate 9 in FIG. 2 is assumed, the pattern elements on the upper surface 91 may be processed in the other comparative examples. It will collapse due to the supply of organic solvents. Although the reason for the collapse of the pattern element is not clear, as one of the reasons, there is a case where a local region in which pure water is scarcely present is generated (that is, only a small amount of surface tension may be exerted on the pattern element). In the area of pure water, the following is expressed as "partial drying"). For example, the organic solvent supplied to the central portion of the upper surface 91 is diffused so that the pure water on the upper surface 91 (which becomes a thin layer due to the high-speed rotation of the substrate 9) is extruded outward, that is, the organic solvent is organic. The interface between the solvent and the pure water spreads on the upper surface 91 in such a manner as to move toward the outer edge portion from the vicinity of the center portion. At this time, the low solubility of the organic solvent and pure water (the ease of mixing between the two, which can also be regarded as affinity), or the difference in surface tension between the organic solvent and the pure water may occur at the interface between the two. Partial drying. If local drying occurs, the pattern elements collapse due to the influence of the surface tension acting on the pattern elements.
相對於此，於圖1之基板處理裝置1中，於形成外側杯對向狀態之後，一面以藉由外側杯部25之內側面接取自上面91飛濺之液體之方式使基板9以較高之轉速旋轉，一面依序朝基板9之上面91上供給純水、混合液及有機溶劑。然後，於內側杯對向狀態下，朝上面91上供給充填材溶液，進而於上面91上充填充填材溶液。藉由以上之處理，可抑制純水之朝內側杯部24內之流入，防止(或抑制)充填材溶液與純水混合。此外，將與純水之溶解性較 有機溶劑高、或與純水之表面張力之差較有機溶劑小之混合液，供給於施加有純水之上面91。藉此，不容易在混合液與純水之界面產生上面91之局部之乾燥。其結果，可一面省去純水之液膜911之形成處理，一面抑制充填材溶液之供給前之圖案要素之倒塌。並且，於將有機溶劑之液膜形成在上面91上之狀態下，朝上面91供給充填材溶液，可適宜地將充填材溶液充填於圖案要素間之間隙內。 On the other hand, in the substrate processing apparatus 1 of FIG. 1, after the outer cup is opposed to each other, the substrate 9 is made higher by picking up the liquid splashed from the upper surface 91 by the inner side surface of the outer cup portion 25. The rotation speed is rotated, and pure water, a mixed liquid, and an organic solvent are supplied to the upper surface 91 of the substrate 9 in this order. Then, in the opposite state of the inner cup, the filling material solution is supplied onto the upper surface 91, and the upper surface 91 is filled with the filling material solution. By the above treatment, the inflow of the pure water into the inner cup portion 24 can be suppressed, and the filling material solution can be prevented (or suppressed) from being mixed with the pure water. In addition, it will be more soluble than pure water. A mixture of a high organic solvent or a surface tension of pure water which is smaller than an organic solvent is supplied to the upper surface 91 to which pure water is applied. Thereby, it is not easy to produce partial drying of the upper surface 91 at the interface between the mixed liquid and the pure water. As a result, the formation of the liquid film 911 of pure water can be omitted, and the collapse of the pattern elements before the supply of the filler solution can be suppressed. Further, in a state where the liquid film of the organic solvent is formed on the upper surface 91, the filling material solution is supplied to the upper surface 91, and the filling material solution can be appropriately filled in the gap between the pattern elements.
再者，雖於內側防濺部241內存在有純粹之有機溶劑，但有機溶劑與充填材溶液混合之情況並不會造成問題。此外，由於步驟S16中之朝基板9上之有機溶劑之供給量少，因此有機溶劑不易附著於內側防濺部241之內側面之上部249(參照圖5)。因此，還可防止附著於該上部249之液體之朝上面91之落下。 Further, although a pure organic solvent exists in the inner splash guard portion 241, the organic solvent is mixed with the filler solution without causing a problem. Further, since the supply amount of the organic solvent on the substrate 9 in the step S16 is small, the organic solvent is less likely to adhere to the inner surface upper portion 249 of the inner splash guard portion 241 (see FIG. 5). Therefore, it is also possible to prevent the liquid adhering to the upper portion 249 from falling toward the upper surface 91.
於基板處理裝置1中，於朝上面91上供給混合液時，混合液中之有機溶劑之濃度被逐漸升高。藉此，可確保存在於上面91上之液體(純水或濃度低之混合液)與混合液之間的一定之溶解性，更確實地抑制上面91之局部之乾燥，並且可於上面91上形成有機溶劑之液膜。此外，於步驟S14~S16中，藉由自相同之第1噴嘴31依序吐出純水、混合液及有機溶劑，可簡化與此等之處理液之吐出相關之處理。 In the substrate processing apparatus 1, when the mixed liquid is supplied onto the upper surface 91, the concentration of the organic solvent in the mixed liquid is gradually increased. Thereby, it is possible to ensure a certain solubility between the liquid (pure water or a low-concentration mixed solution) existing on the upper surface 91 and the mixed liquid, and more reliably suppress the partial drying of the upper surface 91, and can be applied to the upper surface 91. A liquid film forming an organic solvent. Further, in steps S14 to S16, the pure water, the mixed liquid, and the organic solvent are sequentially discharged from the same first nozzle 31, whereby the processing relating to the discharge of the processing liquid can be simplified.
圖7為顯示基板處理裝置之另一例之圖。於圖7之基板處理裝置1a中，除了第1及第2噴嘴31、32外，還設置有第3噴嘴32a、及固定噴嘴35。此外，藥液供給部41、純水供給部42、有機溶劑供給部43及充填材溶液供給部44、與第1噴嘴31、第2噴嘴32、第3噴嘴32a及固定噴嘴35之連接關係，係與圖1之基 板處理裝置1不同。其他之構成，係與圖1之基板處理裝置1相同，且對相同之構成賦予相同之符號。 Fig. 7 is a view showing another example of the substrate processing apparatus. In the substrate processing apparatus 1a of FIG. 7, in addition to the first and second nozzles 31, 32, a third nozzle 32a and a fixed nozzle 35 are provided. Further, the chemical liquid supply unit 41, the pure water supply unit 42, the organic solvent supply unit 43, and the filling material supply unit 44 are connected to the first nozzle 31, the second nozzle 32, the third nozzle 32a, and the fixed nozzle 35, And the base of Figure 1 The board processing apparatus 1 is different. The other configurations are the same as those of the substrate processing apparatus 1 of Fig. 1, and the same components are denoted by the same reference numerals.
固定噴嘴35係於較基板9之上面91靠上方(圖7中，較外側杯部25之上端靠上方)之既定位置上，被固定於艙體5。此外，於沿中心軸J1觀察之情況下，固定噴嘴35係配置在不與基板9重疊之位置。純水供給部42，係經由流量控制閥451及開閉閥452而連接於連接部45，有機溶劑供給部43，係經由流量控制閥453及開閉閥454而連接於連接部45。連接部45係經由開閉閥459而連接於固定噴嘴35。純水供給部42還經由開閉閥471、472而被連接於第1噴嘴31。有機溶劑供給部43還經由開閉閥473而被連接於第2噴嘴32。藥液供給部41係經由開閉閥475、472而連接於第1噴嘴31。充填材溶液供給部44係經由開閉閥476而連接於第3噴嘴32a。第2噴嘴32及第3噴嘴32a，係藉由第2‧第3噴嘴移動機構34a而進行移動。 The fixed nozzle 35 is fixed to the cabin 5 at a predetermined position above the upper surface 91 of the substrate 9 (in Fig. 7, above the upper end of the outer cup portion 25). Further, in the case of viewing along the central axis J1, the fixed nozzle 35 is disposed at a position that does not overlap the substrate 9. The pure water supply unit 42 is connected to the connection unit 45 via the flow rate control valve 451 and the opening and closing valve 452, and the organic solvent supply unit 43 is connected to the connection unit 45 via the flow rate control valve 453 and the opening and closing valve 454. The connecting portion 45 is connected to the fixed nozzle 35 via the opening and closing valve 459. The pure water supply unit 42 is also connected to the first nozzle 31 via the opening and closing valves 471 and 472. The organic solvent supply unit 43 is also connected to the second nozzle 32 via the opening and closing valve 473. The chemical solution supply unit 41 is connected to the first nozzle 31 via the opening and closing valves 475 and 472. The filling solution supply unit 44 is connected to the third nozzle 32a via the opening and closing valve 476. The second nozzle 32 and the third nozzle 32a are moved by the second and third nozzle moving mechanisms 34a.
圖8為顯示基板處理裝置1a之基板9之處理之一部分流程之圖，且顯示在圖2中之步驟S13與步驟S16之間進行的處理。於圖7之基板處理裝置1a中，藉由在外側杯對向狀態下開啟開閉閥475、472，自配置在與基板9之上面91對向之對向位置的第1噴嘴31連續地吐出藥液。來自第1噴嘴31之藥液，被供給於旋轉之基板9之上面91，且自上面91飛濺之藥液，藉由外側杯部25之內側面所接取(圖2：步驟S13)。若將開閉閥475關閉而完成藥液之供給，則藉由開啟開閉閥471，經由第1噴嘴31將純水連續地供給至上面91，進而藉由純水對上面91進行沖洗處理(圖8：步驟S14)。此外，藉由開啟開閉閥452、459，如圖9所示，經由固 定噴嘴35朝上面91供給純水。 Fig. 8 is a view showing a part of the flow of the processing of the substrate 9 of the substrate processing apparatus 1a, and shows the processing performed between step S13 and step S16 in Fig. 2. In the substrate processing apparatus 1a of FIG. 7, the opening and closing valves 475 and 472 are opened in the opposite direction of the outer cup, and the first nozzle 31 disposed at the opposite position to the upper surface 91 of the substrate 9 is continuously discharged. liquid. The chemical liquid from the first nozzle 31 is supplied to the upper surface 91 of the rotating substrate 9, and the chemical liquid splashed from the upper surface 91 is taken up by the inner side surface of the outer cup portion 25 (FIG. 2: step S13). When the opening and closing valve 475 is closed to supply the chemical liquid, the opening and closing valve 471 is opened, and pure water is continuously supplied to the upper surface 91 via the first nozzle 31, and the upper surface 91 is rinsed by pure water (Fig. 8). :Step S14). Further, by opening the opening and closing valves 452 and 459, as shown in FIG. The fixed nozzle 35 supplies pure water toward the upper surface 91.
若來自固定噴嘴35之純水之供給開始後，則停止來自第1噴嘴31之純水之供給。接著，藉由圖7之第1噴嘴移動機構33，使第1噴嘴31在水平方向上朝自基板9分離之待機位置移動(步驟S21)。此外，配置於另一待機位置之第2噴嘴32，藉由第2‧第3噴嘴移動機構34a，朝與上面91之中央部對向之對向位置移動(步驟S22)。再者，也可於完成來自第1噴嘴31之藥液之供給後，僅自固定噴嘴35朝上面91供給純水。 When the supply of the pure water from the fixed nozzle 35 is started, the supply of the pure water from the first nozzle 31 is stopped. Then, the first nozzle 31 is moved in the horizontal direction toward the standby position separated from the substrate 9 by the first nozzle moving mechanism 33 of FIG. 7 (step S21). Further, the second nozzle 32 disposed at the other standby position is moved toward the opposite position to the center portion of the upper surface 91 by the second and third nozzle moving mechanisms 34a (step S22). Further, after the supply of the chemical liquid from the first nozzle 31 is completed, pure water may be supplied only from the fixed nozzle 35 toward the upper surface 91.
與上述步驟S21、S22中之第1及第2噴嘴31、32之移動同步，繼續來自固定噴嘴35之處理液之供給。具體而言，若來自固定噴嘴35之純水之供給被繼續既定時間，則維持開啟連接於純水供給部42之開閉閥452之狀態不變，將連接於有機溶劑供給部43之開閉閥454開啟。藉此，還朝連接部45之內部空間供給有機溶劑，生成將有機溶劑與純水混合之混合液。混合液經由固定噴嘴35被連續地供給於上面91，且自基板9飛濺之混合液，藉由外側杯部25之內側面而被接取(步驟S15)。此時，藉由控制流量控制閥451、453之開度，使混合液中之有機溶劑之濃度自0%左右逐漸升高至100%左右。 In synchronization with the movement of the first and second nozzles 31 and 32 in the above steps S21 and S22, the supply of the treatment liquid from the fixed nozzle 35 is continued. Specifically, when the supply of the pure water from the fixed nozzles 35 is continued for a predetermined period of time, the state in which the opening and closing valve 452 connected to the pure water supply unit 42 is maintained is maintained, and the opening and closing valve 454 connected to the organic solvent supply unit 43 is connected. Open. Thereby, an organic solvent is supplied to the internal space of the connection part 45, and the mixed liquid which mixes an organic solvent and pure water is produced. The mixed liquid is continuously supplied to the upper surface 91 via the fixed nozzle 35, and the mixed liquid splashed from the substrate 9 is picked up by the inner side surface of the outer cup portion 25 (step S15). At this time, by controlling the opening degree of the flow rate control valves 451 and 453, the concentration of the organic solvent in the mixed liquid is gradually increased from about 0% to about 100%.
若混合液之有機溶劑之濃度變為0%左右，則藉由開啟開閉閥473，如圖10所示，經由第2噴嘴32連續地朝上面91供給有機溶劑(純粹之有機溶劑)(圖2：步驟S16)。若來自第2噴嘴32之有機溶劑之供給開始後，則停止來自固定噴嘴35之混合液之供給。自旋轉之基板9飛濺之有機溶劑，藉由外側杯部25之內側面所接取。 When the concentration of the organic solvent of the mixed solution is about 0%, the opening and closing valve 473 is opened, and as shown in FIG. 10, the organic solvent (pure organic solvent) is continuously supplied to the upper surface 91 via the second nozzle 32 (FIG. 2). :Step S16). When the supply of the organic solvent from the second nozzle 32 is started, the supply of the mixed liquid from the fixed nozzle 35 is stopped. The organic solvent splashed by the self-rotating substrate 9 is taken up by the inner side surface of the outer cup portion 25.
若自有機溶劑之供給開始經過既定時間，則降低基板9之轉速、或停止基板9之旋轉。此外，還停止有機溶劑之供給。藉此，形成覆蓋上面91整體之較厚之有機溶劑之液膜。於保持上面91上之有機溶劑之液膜之狀態下，藉由圖7之防濺部升降機構26使內側防濺部241上昇，而形成內側杯對向狀態(步驟S17)。接著，藉由開啟開閉閥476，自充填材溶液供給部44且經由第3噴嘴32a朝上面91之中央部供給既定量之充填材溶液(步驟S18)。然後，停止基板9之旋轉，藉由外部之搬送機構，將基板9搬出至艙體5外(步驟S19)。 When the supply of the organic solvent starts for a predetermined period of time, the rotation speed of the substrate 9 is lowered or the rotation of the substrate 9 is stopped. In addition, the supply of the organic solvent is also stopped. Thereby, a liquid film covering the thick organic solvent of the entire upper surface 91 is formed. In the state in which the liquid film of the organic solvent on the upper surface 91 is held, the inner splash guard 241 is raised by the splash-proof portion lifting mechanism 26 of Fig. 7 to form the inner cup facing state (step S17). Then, by opening the opening and closing valve 476, a predetermined amount of the filling material solution is supplied from the filling solution supply unit 44 to the center portion of the upper surface 91 via the third nozzle 32a (step S18). Then, the rotation of the substrate 9 is stopped, and the substrate 9 is carried out to the outside of the cabin 5 by an external transfer mechanism (step S19).
如以上說明，於圖7之基板處理裝置1a中，吐出純水或包含純水之液體之噴嘴(第1噴嘴31及固定噴嘴35)、與吐出有機溶劑之第2噴嘴32，係被分別設置，且自第2噴嘴32不會吐出包含純水之液體。此外，於此種之構成中，與來自固定噴嘴35之純水及混合液之吐出動作同步，使被利用於朝上面91供給藥液之第1噴嘴31自對向位置朝待機位置移動，並且，使配置於另一待機位置之第2噴嘴32朝對向位置移動。然後，接續來自固定噴嘴35之混合液之吐出，自第2噴嘴32吐出純粹之有機溶劑。藉由以上之處理，於第1噴嘴31與第2噴嘴32之交換時，可防止基板9之上面91乾燥。此外，藉由混合液之供給，不容易產生上面91之局部之乾燥，可抑制充填材溶液之供給前之圖案要素之倒塌。並且，可省去純水之液膜911之形成，抑制純水之朝內側杯部24內之流入，進而可防止充填材溶液與純水混合。 As described above, in the substrate processing apparatus 1a of FIG. 7, the nozzles (the first nozzle 31 and the fixed nozzle 35) for discharging pure water or the liquid containing pure water, and the second nozzle 32 for discharging the organic solvent are separately provided. The liquid containing pure water is not discharged from the second nozzle 32. In addition, in the above-described configuration, the first nozzle 31 that is used to supply the chemical liquid to the upper surface 91 is moved from the opposite position to the standby position in synchronization with the discharge operation of the pure water and the mixed liquid from the fixed nozzle 35, and The second nozzle 32 disposed at the other standby position is moved toward the opposite position. Then, the discharge of the mixed liquid from the fixed nozzle 35 is continued, and a pure organic solvent is discharged from the second nozzle 32. By the above processing, when the first nozzle 31 and the second nozzle 32 are exchanged, the upper surface 91 of the substrate 9 can be prevented from drying. Further, by the supply of the mixed liquid, partial drying of the upper surface 91 is less likely to occur, and collapse of the pattern elements before the supply of the filling material solution can be suppressed. Further, the formation of the liquid film 911 of pure water can be omitted, and the inflow of the pure water into the inner cup portion 24 can be suppressed, and the filling material solution can be prevented from being mixed with the pure water.
於圖7之基板處理裝置1a中，也可自固定噴嘴35僅吐出混合液。該情況下，自第1噴嘴31朝基板9供給純水(步驟 S14)，接著自固定噴嘴35朝基板9供給混合液(步驟S15)。被利用於純水之供給之第1噴嘴31的朝待機位置之移動(步驟S21)、及利用於有機溶劑之供給之第2噴嘴32的朝對向位置之移動(步驟S22)，係與步驟S15中之來自固定噴嘴35之混合液之吐出動作同步進行。如上述，藉由自固定噴嘴35至少吐出混合液，於第1噴嘴31與第2噴嘴32之交換時，可防止基板9之上面91乾燥。 In the substrate processing apparatus 1a of Fig. 7, only the mixed liquid can be discharged from the fixed nozzle 35. In this case, pure water is supplied from the first nozzle 31 to the substrate 9 (step S14), the mixed liquid is supplied from the fixed nozzle 35 to the substrate 9 (step S15). The movement of the first nozzle 31 to the standby position by the supply of the pure water (step S21) and the movement of the second nozzle 32 to the opposite position by the supply of the organic solvent (step S22) The discharge operation of the mixed liquid from the fixed nozzle 35 in S15 is performed in synchronization. As described above, at least the mixed liquid is discharged from the fixed nozzle 35, and when the first nozzle 31 and the second nozzle 32 are exchanged, the upper surface 91 of the substrate 9 can be prevented from drying.
於圖7之基板處理裝置1a中，於接續沖洗處理而供給有機溶劑不會成為問題之情況下，也可省去圖8中之步驟S15，而自固定噴嘴35僅吐出純水。 In the substrate processing apparatus 1a of Fig. 7, when the supply of the organic solvent is not caused by the subsequent rinsing treatment, the step S15 in Fig. 8 can be omitted, and only the pure water can be discharged from the fixed nozzle 35.
具體而言，若完成自第1噴嘴31朝上面91之藥液之供給(圖2：步驟S13)，且開始來自固定噴嘴35之純水之供給(圖8：步驟S14)，則第1噴嘴31藉由第1噴嘴移動機構33朝待機位置移動(步驟S21)。接著，配置於另一待機位置之第2噴嘴32，藉由第2‧第3噴嘴移動機構34a而朝對向位置移動(步驟S22)。然後，若來自固定噴嘴35之純水之供給停止後，則經由第2噴嘴32朝上面91連續地供給有機溶劑(純粹之有機溶劑)(圖2：步驟S16)。於基板處理裝置1a中，於進行步驟S13、S14、S16之期間，維持外側杯對向狀態，自旋轉之基板9飛濺之藥液、純水及有機溶劑，藉由外側杯部25之內側面接取。後續之處理係與上述相同。 Specifically, when the supply of the chemical liquid from the first nozzle 31 to the upper surface 91 is completed (FIG. 2: Step S13), and the supply of pure water from the fixed nozzle 35 is started (FIG. 8: Step S14), the first nozzle 31 is moved to the standby position by the first nozzle moving mechanism 33 (step S21). Then, the second nozzle 32 disposed at the other standby position is moved toward the opposite position by the second and third nozzle moving mechanisms 34a (step S22). Then, when the supply of the pure water from the fixed nozzle 35 is stopped, the organic solvent (pure organic solvent) is continuously supplied to the upper surface 91 via the second nozzle 32 (FIG. 2: Step S16). In the substrate processing apparatus 1a, while the steps S13, S14, and S16 are being performed, the chemical solution, the pure water, and the organic solvent splashed from the rotating substrate 9 are maintained while the outer cup is opposed, and the inner side surface of the outer cup portion 25 is connected. take. Subsequent processing is the same as above.
於自固定噴嘴35僅吐出純水之基板處理裝置1a中，與自固定噴嘴35朝上面91連續地供給純水之處理同步，使利用於藥液之供給之第1噴嘴31自對向位置朝待機位置移動，並且，使配置於另一待機位置之第2噴嘴32朝對向位置移動。然後，大致接續來自固定噴嘴35之純水之吐出，自第2噴嘴32吐出純粹之有 機溶劑。如此，於第1噴嘴31與第2噴嘴32之交換時，藉由自固定噴嘴35供給純水，可防止基板9之上面91乾燥。其結果，可抑制充填材溶液之供給前之圖案要素之倒塌。此外，與上述例子相同，自旋轉之基板9之上面91飛濺之純水，藉由外側杯部25之內側面而被接取。藉此，可抑制純水朝內側杯部24內之流入，防止充填材溶液與純水混合。 In the substrate processing apparatus 1a that discharges only pure water from the fixed nozzle 35, the process of continuously supplying pure water to the upper surface 91 from the fixed nozzle 35 is synchronized, and the first nozzle 31 for supplying the chemical liquid is directed from the opposite position. The standby position is moved, and the second nozzle 32 disposed at the other standby position is moved toward the opposite position. Then, the discharge of the pure water from the fixed nozzle 35 is substantially continued, and the discharge from the second nozzle 32 is pure. Machine solvent. As described above, when the first nozzle 31 and the second nozzle 32 are exchanged, pure water is supplied from the fixed nozzle 35, whereby the upper surface 91 of the substrate 9 can be prevented from drying. As a result, it is possible to suppress collapse of the pattern elements before the supply of the filler solution. Further, as in the above example, the pure water splashed on the upper surface 91 of the self-rotating substrate 9 is taken up by the inner side surface of the outer cup portion 25. Thereby, the inflow of pure water into the inner cup portion 24 can be suppressed, and the filling material solution can be prevented from being mixed with the pure water.
此外，於自固定噴嘴35僅吐出純水之情況下，也可於停止來自固定噴嘴35之純水之吐出之前，開始自配置於對向位置之第2噴嘴32吐出純粹之有機溶劑。換言之，局部同步地進行朝基板9之上面91之純水之供給、與朝上面91之有機溶劑之供給。該情況下，於基板9上實質上會生成混合液、亦即朝基板9供給混合液。然後，停止來自固定噴嘴35之純水之吐出，朝基板9僅供給純粹之有機溶劑。該情況下，也可抑制因上面91之局部之乾燥而引起之圖案要素之倒塌。 Further, when only the pure water is discharged from the fixed nozzle 35, it is possible to start the discharge of the pure organic solvent from the second nozzle 32 disposed at the opposite position before stopping the discharge of the pure water from the fixed nozzle 35. In other words, the supply of the pure water to the upper surface 91 of the substrate 9 and the supply of the organic solvent toward the upper surface 91 are performed in a partially synchronized manner. In this case, a mixed liquid is substantially formed on the substrate 9, that is, the mixed liquid is supplied to the substrate 9. Then, the discharge of the pure water from the fixed nozzle 35 is stopped, and only the pure organic solvent is supplied to the substrate 9. In this case as well, the collapse of the pattern elements caused by the partial drying of the upper surface 91 can be suppressed.
於上述基板處理裝置1、1a中，可進行各種各樣之變形。 Various deformations can be performed in the substrate processing apparatuses 1 and 1a described above.
於基板處理裝置1、1a中，雖然將純水供給部42、有機溶劑供給部43及連接部45作為主要之構成要素，構成將混合液供給於上面91之混合液供給部，但混合液供給部，也可與純水供給部42及有機溶劑供給部43獨立而實現。 In the substrate processing apparatuses 1 and 1a, the pure water supply unit 42, the organic solvent supply unit 43, and the connection unit 45 are main components, and the mixed liquid supply unit that supplies the mixed liquid to the upper surface 91 is configured. The portion may be realized independently of the pure water supply unit 42 and the organic solvent supply unit 43.
混合液中之有機溶劑之濃度也可恆定。圖11及圖12為顯示調查混合液中之有機溶劑(在此為IPA)之濃度、及混合液與純水之溶解性的關係之實驗結果之圖。於本實驗中，準備藉由封閉構件將一端封閉之直徑為19mm之管，且於將15cc之純水蓄積於 朝上下方向延伸之該管內之狀態下，沿該管之內面注入2cc之IPA濃度為10vol%(體積百分比濃度)、20vol%、50vol%、100vol%之混合液(IPA濃度為100vol%之情況，為純粹之有機溶劑)。於封閉構件設置有直徑3mm之取樣管，且於自混合液之注入算起經過0.5分鐘、1分鐘、2分鐘之後，藉由取樣管抽取混合液與純水之界面附近之微量之液體，測定該液體之IPA濃度。圖11及圖12顯示在自混合液之注入前的純水之液面之位置(相當於混合液與純水之界面)朝封閉構件側分別為5mm及10mm之位置抽取之液體之IPA濃度。 The concentration of the organic solvent in the mixed solution can also be constant. Fig. 11 and Fig. 12 are graphs showing experimental results showing the relationship between the concentration of the organic solvent (here, IPA) in the mixed solution and the solubility of the mixed solution and pure water. In this experiment, a tube having a diameter of 19 mm which is closed at one end by a closing member is prepared, and 15 cc of pure water is accumulated in 2 cc of a mixture having an IPA concentration of 10 vol% (volume percent concentration), 20 vol%, 50 vol%, and 100 vol% (IPA concentration of 100 vol%) was injected along the inner surface of the tube in a state in which the tube was extended in the vertical direction. The situation is pure organic solvent). A sampling tube having a diameter of 3 mm is disposed in the closing member, and after a minute, 1 minute, and 2 minutes from the injection of the mixed liquid, a trace amount of the liquid near the interface between the mixed liquid and the pure water is extracted by the sampling tube. The IPA concentration of the liquid. Fig. 11 and Fig. 12 show the IPA concentration of the liquid extracted at a position of the liquid surface of the pure water before the injection of the mixed liquid (corresponding to the interface between the mixed liquid and the pure water) at positions of 5 mm and 10 mm toward the side of the closing member, respectively.
由圖11及圖12可知，於IPA濃度為100vol%之情況(圖11及圖12中，標示為「IPA 100%」。以下相同)，可以說界面附近之IPA濃度之上昇小，且有機溶劑之對純水之溶解性低。另一方面，於IPA濃度為10vol%、20vol%、50vol%之情況下，可以說界面附近之IPA濃度之上昇，較100vol%之情況大，且混合液之對純水之溶解性高。藉此，於將混合液之有機溶劑之濃度設為恆定之情況下，為了更確實地抑制局部之乾燥，較佳為該濃度為50vol%以下且10vol%以上。此外，根據有效率地使用有機溶劑之觀點，該濃度較佳為30%以下，更佳為20%以下。 As can be seen from Fig. 11 and Fig. 12, when the IPA concentration is 100 vol% (indicated as "IPA 100%" in Fig. 11 and Fig. 12, the same applies hereinafter), it can be said that the increase in the IPA concentration near the interface is small, and the organic solvent It has low solubility in pure water. On the other hand, when the IPA concentration is 10 vol%, 20 vol%, or 50 vol%, it can be said that the increase in the IPA concentration in the vicinity of the interface is larger than that in the case of 100 vol%, and the solubility of the mixed liquid in pure water is high. Therefore, when the concentration of the organic solvent of the mixed solution is made constant, in order to more reliably suppress local drying, the concentration is preferably 50 vol% or less and 10 vol% or more. Further, the concentration is preferably 30% or less, more preferably 20% or less, from the viewpoint of efficiently using an organic solvent.
於基板處理裝置1、1a中，也可藉由設置升降旋轉吸盤22之升降機構，於外側杯對向狀態下，藉由使旋轉吸盤22及基板9(例如，參照圖1)下降、亦即使內側杯部24相對於基板9上昇，而形成內側杯對向狀態。如此，基板處理裝置1、1a之升降機構，只要使內側杯部24相對於基板9升降即可。 In the substrate processing apparatuses 1 and 1a, the elevating mechanism for raising and lowering the rotary chuck 22 may be provided, and the rotating chuck 22 and the substrate 9 (see, for example, FIG. 1) may be lowered in the opposite direction of the outer cup, even if The inner cup portion 24 rises relative to the substrate 9 to form an inner cup facing state. As described above, the elevating mechanism of the substrate processing apparatuses 1 and 1a may be such that the inner cup portion 24 is lifted and lowered with respect to the substrate 9.
基板9可以各種之形式保持。例如，也可藉由把持基 板9之外緣部之基板保持部，於使形成有圖案之主表面朝向上方之狀態下保持基板9。 The substrate 9 can be held in various forms. For example, by holding the base The substrate holding portion at the outer edge portion of the plate 9 holds the substrate 9 in a state where the main surface on which the pattern is formed faces upward.
以基板處理裝置1、1a處理之基板，不限於半導體基板，也可為玻璃基板或其他之基板。 The substrate processed by the substrate processing apparatuses 1 and 1a is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.
上述實施形態及各變形例之構成，只要不相互矛盾，也可適宜組合。 The configurations of the above-described embodiments and modifications may be combined as appropriate without contradicting each other.
雖然對發明詳細地進行了描述及說明，但已述之說明僅為例示而非用以限制。因此，只要不超出本發明之範圍，即可實施多數之變形或形態。 Although the invention has been described and illustrated in detail, the foregoing description Therefore, many variations or modifications can be made without departing from the scope of the invention.
1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit
5‧‧‧艙體 5‧‧‧ cabin
9‧‧‧基板 9‧‧‧Substrate
10‧‧‧控制部 10‧‧‧Control Department
21‧‧‧旋轉馬達 21‧‧‧Rotary motor
22‧‧‧旋轉吸盤 22‧‧‧Rotating suction cup
23‧‧‧杯單元 23‧‧‧ cup unit
24‧‧‧內側杯部 24‧‧‧ inside cup
25‧‧‧外側杯部 25‧‧‧Outer cup
26‧‧‧防濺部升降機構 26‧‧‧ splash guard lifting mechanism
31‧‧‧第1噴嘴 31‧‧‧1st nozzle
32‧‧‧第2噴嘴 32‧‧‧2nd nozzle
33‧‧‧第1噴嘴移動機構 33‧‧‧1st nozzle moving mechanism
34‧‧‧第2噴嘴移動機構 34‧‧‧2nd nozzle moving mechanism
41‧‧‧藥液供給部 41‧‧‧Drug supply department
42‧‧‧純水供給部 42‧‧‧Pure Water Supply Department
43‧‧‧有機溶劑供給部 43‧‧‧Organic solvent supply department
44‧‧‧充填材溶液供給部 44‧‧‧Filling solution supply department
45‧‧‧連接部 45‧‧‧Connecting Department
50‧‧‧封閉空間 50‧‧‧closed space
51‧‧‧艙體底部 51‧‧‧Bottom of the cabin
52‧‧‧艙體上底部 52‧‧‧Bottom of the cabin
53‧‧‧艙體內側壁部 53‧‧‧ Side wall of the cabin
54‧‧‧艙體外側壁部 54‧‧‧ cabin outer wall
55‧‧‧艙體頂蓋部 55‧‧‧Cable body cover
91‧‧‧(基板之)上面 91‧‧‧(substrate) above
221‧‧‧軸 221‧‧‧Axis
230‧‧‧取液部 230‧‧‧liquid intake
231‧‧‧基部 231‧‧‧ base
232‧‧‧環狀底部 232‧‧‧ring bottom
233‧‧‧內側周壁部 233‧‧‧The inner peripheral wall
234‧‧‧外側周壁部 234‧‧‧Outer peripheral wall
241‧‧‧內側防濺部 241‧‧‧Inside splash guard
242‧‧‧卡合部 242‧‧‧Care Department
243‧‧‧內側排液管路 243‧‧‧Internal drain line
251‧‧‧外側防濺部 251‧‧‧Outside splash guard
252‧‧‧卡合部 252‧‧‧Care Department
253‧‧‧外側排液管路 253‧‧‧Outside drain line
331‧‧‧臂 331‧‧‧ Arm
450‧‧‧開閉閥 450‧‧‧Opening and closing valve
451‧‧‧流量控制閥 451‧‧‧Flow control valve
452‧‧‧開閉閥 452‧‧‧Opening and closing valve
453‧‧‧流量控制閥 453‧‧‧Flow control valve
454‧‧‧開閉閥 454‧‧‧Opening valve
459‧‧‧開閉閥 459‧‧‧Opening valve
461‧‧‧開閉閥 461‧‧‧Opening and closing valve
541‧‧‧搬出入口 541‧‧‧ moving out of the entrance
542‧‧‧蓋部 542‧‧‧ Cover
J1‧‧‧中心軸 J1‧‧‧ central axis
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