TW201739973A - Apparatus and method for supplying plating solution to plating TANK, plating system, powder container, and plating method - Google Patents

Apparatus and method for supplying plating solution to plating TANK, plating system, powder container, and plating method Download PDF

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TW201739973A
TW201739973A TW106103945A TW106103945A TW201739973A TW 201739973 A TW201739973 A TW 201739973A TW 106103945 A TW106103945 A TW 106103945A TW 106103945 A TW106103945 A TW 106103945A TW 201739973 A TW201739973 A TW 201739973A
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plating
tank
powder
plating solution
supplying
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TWI721094B (en
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竇春暉
向山佳孝
荒木裕二
下山正
藤方淳平
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荏原製作所股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/10—Agitating of electrolytes; Moving of racks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C25D21/14—Controlled addition of electrolyte components
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/003—Electroplating using gases, e.g. pressure influence
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/20—Electroplating using ultrasonics, vibrations

Abstract

An improved apparatus for adding powder comprising at least a metal, such as copper, to a plating solution, and supplying the plating solution to a plating tank is disclosed. The apparatus includes a hopper having an inlet which is connectable to a powder conduit of a powder container holding the powder therein, a feeder which communicates with a bottom opening of the hopper, a motor coupled to the feeder, and a plating-solution tank coupled to an outlet of the feeder and configured to dissolve the powder in the plating solution.

Description

用以供給鍍覆液至鍍覆槽之裝置及方法、鍍覆系統、粉體容器、及鍍覆方法 Apparatus and method for supplying plating liquid to plating tank, plating system, powder container, and plating method

本發明有關用以供給鍍覆液至鍍覆槽之裝置及方法。另外，本發明有關具有那樣的裝置的鍍覆系統。而且，本發明有關用於收容鍍覆所使用的金屬粉體的粉體容器。而且，本發明有關使用添加有鍍覆所使用的金屬粉體的鍍覆液來對基板進行鍍覆的方法。 The present invention relates to an apparatus and method for supplying a plating solution to a plating tank. Further, the present invention relates to a plating system having such a device. Moreover, the present invention relates to a powder container for accommodating a metal powder used for plating. Moreover, the present invention relates to a method of plating a substrate by using a plating solution to which a metal powder used for plating is added.

隨著電子設備的小型化、高速化以及低電能消耗化的進行，進行半導體裝置內的配線圖案的微細化，隨著該配線圖案的微細化，配線所使用的材料從以往的鋁和鋁合金變化成銅和銅合金。銅的電阻率是1.67μΩcm，比鋁(2.65μΩcm)低約37%。因此，銅配線與鋁配線相比，不僅可抑制電力的消耗，而且即使是相同的配線電阻，也可更微細化。而且，由於低電阻化，銅配線也能夠抑制信號延遲。 With the miniaturization, high speed, and low power consumption of the electronic device, the wiring pattern in the semiconductor device is miniaturized. As the wiring pattern is miniaturized, the material used for the wiring is from the conventional aluminum and aluminum alloy. Changed to copper and copper alloys. The resistivity of copper is 1.67 μΩcm, which is about 37% lower than aluminum (2.65 μΩcm). Therefore, compared with the aluminum wiring, the copper wiring can suppress not only the power consumption but also the same wiring resistance. Moreover, the copper wiring can also suppress the signal delay due to the low resistance.

一般而言，與PVD(物理氣相沉積)、CVD(化學氣相沉積)等相比，以能夠高速成膜的電解鍍覆進行銅的向溝槽(trench)內的埋入。在該電解鍍覆中，在鍍覆液的存在下，通過對基板與陽極之間施加電壓，使銅膜在預先形成於基板的電阻較低的晶種層(供電層)上堆積。一般而言，晶種層由PVD等形成的銅薄膜(銅晶種層)構成，但隨著配線的微細化， 要求更薄的晶種層。因此，一般而言，預想50nm左右的晶種層的膜厚今後成為10~20nm以下。 In general, copper is buried in a trench in comparison with PVD (physical vapor deposition), CVD (chemical vapor deposition), or the like, by electrolytic plating capable of forming a film at a high speed. In the electrolytic plating, a voltage is applied between the substrate and the anode in the presence of a plating solution to deposit a copper film on a seed layer (power supply layer) having a low electrical resistance formed in advance on the substrate. In general, the seed layer is composed of a copper thin film (copper seed layer) formed of PVD or the like, but as the wiring is miniaturized, A thinner seed layer is required. Therefore, in general, it is expected that the film thickness of the seed layer of about 50 nm will be 10 to 20 nm or less in the future.

申請人提出了一種鍍覆裝置(參照專利文獻1)，在該鍍覆裝置中，使用分割成複數個的分割陽極作為陽極，使鍍覆電源與這些各分割陽極單獨地連接。根據該鍍覆裝置，僅在將初始鍍覆膜形成於基板的恒定期間，位於中央側的分割陽極的電流密度比位於外周側的分割陽極的電流密度高，防止鍍覆電流集中於基板的外周部而使鍍覆電流也向基板的中央側流動，從而即使是表層電阻較高的情況下，也可形成均勻的膜厚的鍍覆膜。而且，申請人提出了使用不溶解陽極作為陽極的鍍覆技術(參照專利文獻2、3)。在保持該不溶解陽極的陽極保持件設置有對陽極室內的鍍覆液進行抽吸而排出的鍍覆液排出部，並且，設置有連接到從鍍覆液供給裝置延伸的鍍覆液供給管的鍍覆液注入部。 The applicant has proposed a plating apparatus (see Patent Document 1) in which a divided anode which is divided into a plurality of anodes is used as an anode, and a plating power source is separately connected to each of the divided anodes. According to the plating apparatus, the current density of the divided anode located on the center side is higher than the current density of the divided anode located on the outer peripheral side only during the constant period in which the initial plating film is formed on the substrate, and the plating current is prevented from being concentrated on the outer periphery of the substrate. The plating current also flows toward the center side of the substrate, so that even when the surface resistance is high, a plating film having a uniform film thickness can be formed. Further, the applicant has proposed a plating technique using an insoluble anode as an anode (see Patent Documents 2 and 3). The anode holder holding the insoluble anode is provided with a plating liquid discharge portion that discharges the plating liquid in the anode chamber, and is provided with a plating liquid supply pipe that is connected to the plating liquid supply device. The plating solution injection portion.

而且，近來，為了滿足對使用了半導體的電路系統小型化的要求，實現了能夠將半導體電路安裝於接近其晶片尺寸的封裝。作為實現這樣的封裝的安裝的方法之一，提出了被稱為晶圓級封裝(WLP、或者LP-CSP)的封裝方法。另外，一般而言，該晶圓級封裝存在扇入(fan in)型技術(也稱為WLCSP(Wafer Level Chip Scale Package：晶圓級晶片尺寸封裝))和扇出型(fan out)技術。扇入型WLP是在與晶片尺寸相同的區域中設置外部電極(外部端子)的技術。另一方面，扇出型WLP(FOWLP：Fan Out Wafer-Level-Packaging)例如是如下技術：在埋入有複數個晶片的由絕緣樹脂形成的基板上，在形成再配線和外部電極等比晶片尺寸大的區域中設置外部端子的技術。在形成這樣的晶圓上的再配線和絕緣層等時， 有時使用電解鍍覆技術，設想了也將電解鍍覆技術適用於上述的扇出型WLP。為了將電解鍍覆技術適用於這樣的對微細化要求較高的扇出型WLP技術等，在鍍覆液的管理等方面要求更高級的技術。 Further, recently, in order to satisfy the demand for miniaturization of a circuit system using a semiconductor, it has been possible to mount a semiconductor circuit to a package close to its wafer size. As one of methods for realizing the mounting of such a package, a packaging method called wafer level packaging (WLP, or LP-CSP) has been proposed. In addition, in general, the wafer level package has a fan in type technology (also referred to as a WLCSP (Wafer Level Chip Scale Package)) and a fan out technology. The fan-in type WLP is a technique in which an external electrode (external terminal) is provided in the same area as the wafer. On the other hand, a fan-out type WLP (FOWLP: Fan Out Wafer-Level-Packaging) is, for example, a technique in which a rewiring and an external electrode are formed on a substrate formed of an insulating resin in which a plurality of wafers are embedded. A technique for setting an external terminal in a large-sized area. When forming rewiring, insulating layers, etc. on such a wafer, The electrolytic plating technique is sometimes used, and it is assumed that the electrolytic plating technique is also applied to the above-described fan-out type WLP. In order to apply the electrolytic plating technique to such a fan-out type WLP technology which is highly demanding for miniaturization, a more advanced technique is required in management of a plating solution.

申請人提出了如下方法：為了進行所謂的自下而上鍍覆，防止阻礙自下而上鍍覆的電解液成分的生成且對晶圓等基板進行鍍覆(參照專利文獻4)。該方法是如下技術：使不溶解陽極和基板與含有添加劑的硫酸銅鍍覆液接觸，利用鍍覆電源在基板與不溶解陽極之間施加預定的鍍覆電壓而對基板進行鍍覆。 The applicant has proposed a method of preventing the formation of an electrolyte component from bottom-up plating and plating a substrate such as a wafer in order to perform so-called bottom-up plating (see Patent Document 4). This method is a technique in which an insoluble anode and a substrate are brought into contact with a copper sulfate plating solution containing an additive, and a substrate is plated by applying a predetermined plating voltage between the substrate and the insoluble anode by a plating power source.

另一方面，如上所述，在使用了不溶解性陽極的鍍覆裝置中，可設想採用這樣的方法來補充目的的金屬離子：將粉末狀的金屬鹽投入循環槽內、或在別的槽中使金屬片溶解來進行補充。在此，若將粉末狀的金屬鹽向鍍覆液中補充，則微粒在鍍覆液中增加，擔心該增加了的微粒成為使鍍覆處理後的基板的表面產生缺陷的原因，因此，申請人提出了在使用了不溶解陽極的鍍覆裝置中將鍍覆液的各成分的濃度長期保持恒定的技術(專利文獻5)。採用該技術，通過一邊回收鍍覆液一邊循環再利用鍍覆液，能夠儘量將鍍覆液的使用量抑制得較少。另外，通過使用不溶解性陽極，無需陽極的更換就能夠容易地進行陽極的保養、管理。而且，能夠向鍍覆液補充以比鍍覆液高的濃度含有鍍覆液所含有的成分的補充液，從而將隨著使鍍覆液循環並再利用而變化的鍍覆液成分的濃度維持在恒定範圍內。 On the other hand, as described above, in a plating apparatus using an insoluble anode, it is conceivable to employ such a method to supplement the intended metal ions: the powdered metal salt is introduced into the circulation tank, or in another tank. The metal sheet is dissolved to be replenished. Here, when the powdery metal salt is replenished to the plating solution, the fine particles are increased in the plating solution, and it is feared that the increased fine particles cause defects in the surface of the substrate after the plating treatment, and therefore, application is made. A technique of keeping the concentration of each component of the plating solution constant for a long period of time in a plating apparatus using an insoluble anode has been proposed (Patent Document 5). According to this technique, the amount of the plating solution can be kept as small as possible by recycling the plating solution while recovering the plating solution. Further, by using an insoluble anode, maintenance and management of the anode can be easily performed without replacement of the anode. In addition, it is possible to replenish the plating solution with a replenishing liquid containing a component contained in the plating solution at a concentration higher than that of the plating solution, thereby maintaining the concentration of the plating liquid component which changes as the plating solution is circulated and reused. In a constant range.

現有技術文獻 Prior art literature

專利文獻 Patent literature

專利文獻1：日本特開2002-129383號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2002-129383

專利文獻2：日本特開2005-213610號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2005-213610

專利文獻3：日本特開2008-150631號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2008-150631

專利文獻4：日本特開2016-074975號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2016-074975

專利文獻5：日本特開2007-051362號公報 Patent Document 5: Japanese Patent Laid-Open Publication No. 2007-051362

若使用不溶解陽極來以銅對基板進行鍍覆，則鍍覆液中的銅離子減少。因而，在鍍覆液供給裝置中，需要對鍍覆液中的銅離子的濃度進行調整。作為向鍍覆液補充銅的一個方法可列舉的是向鍍覆液添加氧化銅粉體。然而，若粉體在半導體製造工廠內飛散，則引起無塵室內的污染。而且，鍍覆液供給裝置要求不降低生產率就將所需要的量的氧化銅向鍍覆液添加。此外，也提高對使用那樣的添加了氧化銅的鍍覆液而在基板形成品質更高的銅膜的鍍覆技術的要求。 If the substrate is plated with copper by using an insoluble anode, the copper ions in the plating solution are reduced. Therefore, in the plating solution supply device, it is necessary to adjust the concentration of copper ions in the plating solution. As a method of replenishing copper to the plating solution, a copper oxide powder is added to the plating solution. However, if the powder scatters in the semiconductor manufacturing plant, it causes contamination in the clean room. Further, the plating solution supply device requires that a required amount of copper oxide be added to the plating solution without lowering the productivity. In addition, there is also a demand for a plating technique for forming a copper film having a higher quality on a substrate by using such a copper oxide-added plating solution.

本發明的目的在於提供一種用於向鍍覆液添加至少含有銅等金屬的粉體並將該鍍覆液向鍍覆槽供給的改良後的裝置和方法。另外，本發明的目的在於提供一種具備那樣的裝置的鍍覆系統。而且，本發明的目的在於提供一種上述裝置所使用的、用於收容至少含有銅等金屬的粉體的粉體容器。而且，本發明的目的在於提供一種能夠使用添加有至少含有銅等金屬的粉體的鍍覆液而在基板形成品質更高的金屬膜的鍍覆方法。 An object of the present invention is to provide an improved apparatus and method for adding a powder containing at least a metal such as copper to a plating solution and supplying the plating solution to a plating tank. Further, it is an object of the invention to provide a plating system including such a device. Further, an object of the present invention is to provide a powder container for containing a powder containing at least a metal such as copper, which is used in the above apparatus. Further, an object of the present invention is to provide a plating method capable of forming a metal film having a higher quality on a substrate by using a plating solution containing a powder containing at least a metal such as copper.

根據本發明的一方式，提供一種用以供給鍍覆液至鍍覆槽之裝置，所述鍍覆液中溶解有至少含有鍍覆所使用的金屬的粉體，該裝置的特徵在於，具備：料斗，其具有投入口，該投入口能夠與收容有所述粉體 的粉體容器的粉體導管連結；送料器，其與所述料斗的下部開口連通；電動機，其與所述送料器連結；以及鍍覆液箱，其與所述送料器的出口連結，使所述粉體溶解於所述鍍覆液。 According to an aspect of the present invention, there is provided an apparatus for supplying a plating solution to a plating tank, wherein the plating solution is dissolved with a powder containing at least a metal used for plating, and the apparatus is characterized by comprising: a hopper having an input port capable of accommodating the powder a powder conduit connection of the powder container; a feeder communicating with a lower opening of the hopper; an electric motor coupled to the feeder; and a plating liquid tank coupled to the outlet of the feeder to enable The powder is dissolved in the plating solution.

在一實施方式中，該用以供給鍍覆液至鍍覆槽之裝置還具備：重量測定器，其對所述料斗的重量和所述送料器的重量進行測定；動作控制部，其基於所述重量的測定值的變化，對所述電動機的動作進行控制。 In one embodiment, the apparatus for supplying a plating solution to a plating tank further includes: a weight measuring device that measures a weight of the hopper and a weight of the feeder; and an operation control unit based on the The change in the measured value of the weight controls the operation of the motor.

在一實施方式中，所述動作控制部根據所述重量的測定值的變化，對所述粉體向所述鍍覆液的添加量進行推算，使所述電動機動作直到所述添加量達到目標值為止。 In one embodiment, the operation control unit estimates an amount of addition of the powder to the plating solution based on a change in a measured value of the weight, and causes the motor to operate until the added amount reaches a target The value is up.

在一實施方式中，所述料斗的投入口具有連接密封件，該連接密封件的口徑隨著距所述料斗的投入口的頂端的距離變大而逐漸變小。 In one embodiment, the inlet of the hopper has a connection seal, and the diameter of the connection seal gradually becomes smaller as the distance from the tip end of the input port of the hopper becomes larger.

在一實施方式中，所述連接密封件由彈性材料構成。 In an embodiment, the connection seal is constructed of an elastomeric material.

在一實施方式中，該用以供給鍍覆液至鍍覆槽之裝置還具備密閉腔室，在該密閉腔室之內部配置有所述料斗的投入口，所述密閉腔室具備：門，所述粉體容器能夠經由該門搬入該密閉腔室的內部；以及手套式構件，其構成所述密閉腔室的壁的一部分。 In one embodiment, the apparatus for supplying the plating solution to the plating tank further includes a sealed chamber, and an input port of the hopper is disposed inside the sealed chamber, the sealed chamber having: a door, The powder container can be carried into the interior of the closed chamber via the door; and a glove-like member that forms part of the wall of the closed chamber.

在一實施方式中，所述密閉腔室具備用於使其內部空間與負壓源連通的排氣口。 In one embodiment, the sealed chamber is provided with an exhaust port for communicating an internal space thereof with a source of negative pressure.

在一實施方式中，在所述密閉腔室內配置有使所述粉體容器振動的振動裝置。 In one embodiment, a vibration device that vibrates the powder container is disposed in the sealed chamber.

在一實施方式中，在所述密閉腔室內配置有保持所述粉體容器的真空 夾具。 In an embodiment, a vacuum for holding the powder container is disposed in the sealed chamber Fixture.

在一實施方式中，所述鍍覆液箱具備對所述鍍覆液進行攪拌的攪拌機。 In one embodiment, the plating solution tank includes a stirrer that agitates the plating solution.

在一實施方式中，所述鍍覆液箱具備：配置有所述攪拌機的攪拌槽；以及溢流槽，其與設置於該攪拌槽的下部的連通孔連接。 In one embodiment, the plating solution tank includes: an agitation vessel in which the agitator is disposed; and an overflow tank that is connected to a communication hole provided in a lower portion of the agitation vessel.

在一實施方式中，所述鍍覆液箱還具備與所述溢流槽鄰接的迂回流路。 In one embodiment, the plating solution tank further includes a weir return passage adjacent to the overflow tank.

在一實施方式中，所述鍍覆液箱還具備配置於所述溢流槽內的複數個擋板(baffle)，所述複數個擋板相互錯開地排列。 In one embodiment, the plating liquid tank further includes a plurality of baffles disposed in the overflow tank, and the plurality of baffles are arranged to be shifted from each other.

在一實施方式中，該裝置還具備：包圍罩，其包圍所述送料器與所述鍍覆液箱之間的連接部；不活潑氣體供給管線，其與所述包圍罩的內部連通。 In one embodiment, the apparatus further includes an enclosure cover that surrounds a connection between the feeder and the plating tank, and an inert gas supply line that communicates with the interior of the enclosure.

根據本發明的一方式，提供一種鍍覆系統，其特徵在於，該鍍覆系統具備：複數個鍍覆槽，其用於對基板進行鍍覆；上述用以供給鍍覆液至鍍覆槽的裝置；鍍覆液供給管，其從所述用以供給鍍覆液至鍍覆槽的裝置向所述複數個鍍覆槽延伸。 According to an aspect of the present invention, a plating system is provided, the plating system includes: a plurality of plating grooves for plating a substrate; and the plating solution to supply a plating solution to the plating tank. a plating solution supply pipe that extends from the means for supplying the plating liquid to the plating tank to the plurality of plating grooves.

在一實施方式中，該鍍覆系統還具備從所述複數個鍍覆槽向所述用以供給鍍覆液至鍍覆槽的裝置延伸的鍍覆液返回管。 In one embodiment, the plating system further includes a plating liquid return pipe extending from the plurality of plating tanks to the means for supplying the plating liquid to the plating tank.

根據本發明的一方式，提供一種向鍍覆液供給粉體之方法，所述粉體至少含有鍍覆所使用的金屬，該方法的特徵在於，將***述粉體的粉體容器的粉體導管與料斗的投入口連結，從所述粉體容器向所述料斗供給所述粉體，一邊對貯存有所述粉體的所述料斗的重量和與該料斗的下部開口連通的送料器的重量進行測定，一邊使所述送料器動作，基於所 述重量的測定值的變化，利用所述送料器向鍍覆液添加所述粉體。 According to one aspect of the present invention, there is provided a method of supplying a powder to a plating solution, the powder comprising at least a metal used for plating, the method characterized in that a powder of a powder container accommodating the powder is provided The body conduit is connected to the inlet of the hopper, and the powder is supplied from the powder container to the hopper, and the weight of the hopper in which the powder is stored and the feeder that communicates with the lower opening of the hopper are provided. The weight is measured, and the feeder is operated, based on The change in the measured value of the weight is used to add the powder to the plating solution by the feeder.

在一實施方式中，該向鍍覆液供給粉體之方法還包括對添加有所述粉體的所述鍍覆液進行攪拌的工序。 In one embodiment, the method of supplying the powder to the plating solution further includes a step of stirring the plating solution to which the powder is added.

在一實施方式中，該向鍍覆液供給粉體之方法還包括根據所述重量的測定值的變化，對所述粉體向所述鍍覆液的添加量進行推算，使所述送料器動作直到所述添加量達到目標值為止的工序。 In one embodiment, the method of supplying powder to the plating solution further includes estimating an amount of the powder to be added to the plating solution according to a change in a measured value of the weight, and causing the feeder The operation until the amount of addition reaches the target value.

根據本發明的一方式，提供一種粉體容器，用於收容至少含有鍍覆所使用的金屬的粉體，該粉體容器的特徵在於，具備：容器主體，該容器主體能夠在其內部***述粉體；粉體導管，其與所述容器主體連接；以及閥，其安裝於所述粉體導管。 According to an aspect of the present invention, there is provided a powder container for containing a powder containing at least a metal used for plating, the powder container comprising: a container body capable of accommodating the container body therein a powder; a powder conduit connected to the container body; and a valve mounted to the powder conduit.

在一實施方式中，所述粉體導管的頂端具有圓錐台形狀。 In one embodiment, the tip end of the powder conduit has a truncated cone shape.

根據本發明的一方式，提供一種對基板進行鍍覆之方法，其特徵在於，具有：將鍍覆液從鍍覆槽向鍍覆液箱移送的工序；基於鍍覆槽內的鍍覆液中的金屬離子的濃度，對至少含有鍍覆所使用的金屬的粉體應該向收容於所述鍍覆液箱的鍍覆液添加的量進行推算的工序；將所述至少含有鍍覆所使用的金屬的粉體向收容於所述鍍覆液箱的鍍覆液供給的工序；使所述粉體溶解於所述鍍覆液箱所收容的鍍覆液的工序；將所述粉體溶解後的所述鍍覆液從所述鍍覆液箱向所述鍍覆槽供給的工序；使基板與收容於所述鍍覆槽的鍍覆液接觸的工序；以及在收容於所述鍍覆槽內的鍍覆液中產生電化學反應，以在鍍覆液中使所述金屬析出於基板表面上的工序。 According to an aspect of the present invention, a method of plating a substrate, comprising: a step of transferring a plating solution from a plating tank to a plating solution tank; and a plating solution in the plating tank The concentration of the metal ion is a step of estimating the amount of the powder containing at least the metal used for the plating to be added to the plating solution contained in the plating solution tank; and the at least the plating layer is used. a step of supplying the powder of the metal to the plating solution contained in the plating solution tank; a step of dissolving the powder in the plating solution contained in the plating solution tank; and dissolving the powder a step of supplying the plating solution from the plating solution tank to the plating tank, a step of contacting the substrate with a plating solution accommodated in the plating tank, and a step of receiving the plating solution in the plating tank An electrochemical reaction occurs in the plating solution inside to deposit the metal on the surface of the substrate in the plating solution.

在一實施方式中，所述鍍覆槽由複數個鍍覆槽構成，在將收 容於所述鍍覆液箱的鍍覆液向該複數個鍍覆槽供給時，一邊對鍍覆液的流量進行控制，一邊向該複數個鍍覆槽分別供給鍍覆液。 In one embodiment, the plating tank is composed of a plurality of plating tanks, and is to be received When the plating liquid contained in the plating liquid tank is supplied to the plurality of plating tanks, the plating liquid is supplied to the plurality of plating tanks while controlling the flow rate of the plating liquid.

在一實施方式中，所述鍍覆槽由複數個鍍覆槽構成，對該複數個鍍覆槽內的鍍覆液中的金屬離子始終進行監視，並且在所述金屬離子的濃度低於預定值的情況下，使該複數個鍍覆槽內的鍍覆液從鍍覆槽向鍍覆液箱移送，並且將鍍覆液從所述鍍覆液箱向所述複數個鍍覆槽中的任意一個供給。 In one embodiment, the plating tank is composed of a plurality of plating tanks, and metal ions in the plating liquid in the plurality of plating tanks are always monitored, and the concentration of the metal ions is lower than a predetermined one. In the case of a value, the plating solution in the plurality of plating tanks is transferred from the plating tank to the plating liquid tank, and the plating liquid is transferred from the plating liquid tank to the plurality of plating tanks. Any one supply.

根據本發明的一方式，提供一種記憶媒體，其係非暫態性的電腦可讀取的記憶媒體，其存放有用於執行對基板進行電解鍍覆之方法的電腦程式，該記憶媒體的特徵在於，所述對基板進行電解鍍覆之方法具有如下工序：將鍍覆液從鍍覆槽向鍍覆液箱移送的工序；將至少含有鍍覆所使用的金屬的粉體向收容於所述鍍覆液箱的鍍覆液供給的工序；使所述粉體溶解於所述鍍覆液箱所收容的鍍覆液的工序；將所述粉體溶解後的所述鍍覆液從所述鍍覆液箱向所述鍍覆槽供給的工序；使基板與收容到所述鍍覆槽的鍍覆液接觸的工序；以及在收容於所述鍍覆槽內的鍍覆液中產生電化學反應，以在鍍覆液中使所述金屬析出於基板表面上的工序。 According to an aspect of the present invention, a memory medium is provided which is a non-transitory computer readable memory medium storing a computer program for performing a method of electrolytically plating a substrate, the memory medium being characterized by The method of performing electrolytic plating on a substrate includes a step of transferring a plating solution from a plating tank to a plating solution tank, and storing a powder containing at least a metal used for plating in the plating a step of supplying the plating solution of the coating tank; a step of dissolving the powder in the plating solution contained in the plating solution tank; and plating the plating solution after the powder is dissolved a step of supplying the coating tank to the plating tank; a step of bringing the substrate into contact with the plating solution accommodated in the plating tank; and generating an electrochemical reaction in the plating solution accommodated in the plating tank The step of depositing the metal on the surface of the substrate in the plating solution.

根據本發明的一方式，可提供一種記憶媒體，該記憶媒體係非暫態性的電腦可讀取的記憶媒體，其存放有用於執行對基板進行電解鍍覆之方法的電腦程式，該記憶媒體的特徵在於，所述對基板進行電解鍍覆之方法具有如下工序：對鍍覆槽內的鍍覆液所含有的金屬離子的濃度是否低於設定值進行監視的工序；在所述金屬離子的濃度低於預定值的情況下，對至少含有金屬的粉體應該向鍍覆液添加的量進行推算的工序；將鍍覆液從所述鍍覆槽向鍍覆液箱移送的工序；將所述粉體向收容於所述鍍覆 液箱的鍍覆液供給直到達到推算出的所述量為止的工序；使所述粉體溶解於所述鍍覆液箱所收容的鍍覆液的工序；將所述粉體溶解後的所述鍍覆液從所述鍍覆液箱向所述鍍覆槽供給的工序；使基板與收容於所述鍍覆槽的鍍覆液接觸的工序；以及在收容於所述鍍覆槽內的鍍覆液中產生電化學反應，以在鍍覆液中使所述金屬析出於基板表面上的工序。 According to an aspect of the present invention, a memory medium is provided which is a non-transitory computer readable memory medium storing a computer program for performing a method of electrolytically plating a substrate, the memory medium The method of performing electrolytic plating on a substrate includes a step of monitoring whether a concentration of metal ions contained in a plating solution in a plating tank is lower than a set value, and a step of monitoring the metal ions When the concentration is lower than a predetermined value, a step of estimating the amount of the powder containing at least the metal to be added to the plating solution; and a step of transferring the plating solution from the plating tank to the plating solution tank; The powder is accommodated in the plating a step of supplying the plating solution of the liquid tank until the calculated amount is reached; a step of dissolving the powder in the plating solution contained in the plating solution tank; and dissolving the powder a step of supplying a plating solution from the plating solution tank to the plating tank, a step of bringing a substrate into contact with a plating solution accommodated in the plating tank, and a step of being housed in the plating tank An electrochemical reaction occurs in the plating solution to deposit the metal on the surface of the substrate in the plating solution.

根據本發明，能夠提供一種能夠防止粉體的飛散、同時將粉體向鍍覆液添加、且使其溶解的裝置和方法。而且，根據本發明，能夠使用添加有至少銅等金屬的粉體的鍍覆液來在基板形成品質更高的金屬膜(例如銅膜)。 According to the present invention, it is possible to provide an apparatus and method capable of preventing powder from scattering and simultaneously adding and dissolving powder to a plating solution. Moreover, according to the present invention, it is possible to form a metal film (for example, a copper film) having a higher quality on a substrate by using a plating solution to which a powder of at least a metal such as copper is added.

在鍍覆於基板的金屬種類不是銅而是例如銦、鎳、鈷、釕這樣的其他金屬的情況，也能夠使用上述的粉體容器、鍍覆系統以及鍍覆方法。作為該情況的粉體的例子，可列舉出例如硫酸銦、硫酸鎳、硫酸鈷等硫酸鹽、及氨基磺酸鎳、氨基磺酸鈷等氨基磺酸鹽、及溴化鎳、氯化鎳、氯化鈷等鹵化物、及氧化銦這樣的粉體。 When the metal type plated on the substrate is not copper but another metal such as indium, nickel, cobalt or rhodium, the above-described powder container, plating system, and plating method can also be used. Examples of the powder in this case include sulfates such as indium sulfate, nickel sulfate, and cobalt sulfate, and sulfamate such as nickel sulfamate and cobalt sulfamate, and nickel bromide and nickel chloride. A halide such as cobalt chloride or a powder such as indium oxide.

1‧‧‧鍍覆裝置 1‧‧‧ plating device

2‧‧‧鍍覆槽 2‧‧‧ plating trough

5‧‧‧內槽 5‧‧‧ Inside slot

6‧‧‧外槽 6‧‧‧ outer trough

8‧‧‧不溶解陽極 8‧‧‧Insoluble anode

9‧‧‧陽極保持件 9‧‧‧Anode holder

11‧‧‧基板保持件 11‧‧‧Substrate holder

15‧‧‧鍍覆電源 15‧‧‧ plating power supply

17‧‧‧鍍覆控制部 17‧‧‧Plating Control Department

18a、18b‧‧‧濃度測定器 18a, 18b‧‧‧ concentration tester

20‧‧‧鍍覆液供給裝置 20‧‧‧ plating solution supply device

21‧‧‧粉體容器 21‧‧‧ powder container

24‧‧‧密閉腔室 24‧‧‧Closed chamber

26‧‧‧投入口 26‧‧‧ Input

27‧‧‧料斗 27‧‧‧ hopper

28‧‧‧連接密封件 28‧‧‧Connecting seals

30‧‧‧送料器 30‧‧‧Feeder

31‧‧‧電動機 31‧‧‧Electric motor

32‧‧‧動作控制部 32‧‧‧Action Control Department

35‧‧‧鍍覆液箱 35‧‧‧ plating tank

36‧‧‧鍍覆液供給管 36‧‧‧ plating solution supply pipe

36a、36b‧‧‧分支管 36a, 36b‧‧‧ branch pipe

37‧‧‧鍍覆液返回管 37‧‧‧ plating liquid return pipe

37a‧‧‧排出管 37a‧‧‧Draining tube

38‧‧‧流量計 38‧‧‧ Flowmeter

39‧‧‧流量調節閥 39‧‧‧Flow regulating valve

40‧‧‧泵 40‧‧‧ pump

41‧‧‧過濾器 41‧‧‧Filter

42‧‧‧純水供給管線 42‧‧‧pure water supply pipeline

43‧‧‧開閉閥 43‧‧‧Opening and closing valve

44‧‧‧流量計 44‧‧‧ flowmeter

45‧‧‧容器主體 45‧‧‧ container body

46‧‧‧粉體導管 46‧‧‧ powder catheter

47‧‧‧流量調節閥 47‧‧‧Flow regulating valve

48‧‧‧閥 48‧‧‧Valves

49‧‧‧把手 49‧‧‧Handle

50‧‧‧蓋子 50‧‧‧ cover

55‧‧‧門 55‧‧‧

56‧‧‧手套式構件 56‧‧‧Glove components

58‧‧‧排氣口 58‧‧‧Exhaust port

61‧‧‧真空夾具 61‧‧‧vacuum fixture

65‧‧‧振動裝置 65‧‧‧Vibration device

66‧‧‧底座 66‧‧‧Base

68‧‧‧框架 68‧‧‧Frame

70‧‧‧噴射器 70‧‧‧Injector

72‧‧‧壓縮空氣供給管 72‧‧‧Compressed air supply pipe

73‧‧‧托架 73‧‧‧ bracket

74‧‧‧蓋 74‧‧‧ Cover

75‧‧‧排氣管 75‧‧‧Exhaust pipe

80‧‧‧重量測定器 80‧‧‧ Weight measuring device

81‧‧‧包圍罩 81‧‧‧Enclosed cover

83‧‧‧不活潑氣體供給管線 83‧‧‧Inactive gas supply pipeline

85‧‧‧攪拌機 85‧‧‧Mixer

86‧‧‧攪拌葉片 86‧‧‧Agitating blades

87‧‧‧電動機 87‧‧‧Electric motor

88‧‧‧擋板 88‧‧‧Baffle

88a‧‧‧缺口 88a‧‧ ‧ gap

91‧‧‧攪拌槽 91‧‧‧Stirring tank

92‧‧‧溢流槽 92‧‧‧Overflow trough

93‧‧‧迂回流路 93‧‧‧迂Return road

95‧‧‧連通孔 95‧‧‧Connected holes

110‧‧‧第一連結管 110‧‧‧First connecting tube

112‧‧‧第二連結管 112‧‧‧Second connection tube

113‧‧‧泵 113‧‧‧ pump

115‧‧‧流量計 115‧‧‧ flowmeter

116‧‧‧鍍覆液排出閥 116‧‧‧ plating liquid discharge valve

118‧‧‧濃度測定器 118‧‧‧Concentration tester

DIW‧‧‧純水 DIW‧‧‧ pure water

W‧‧‧基板 W‧‧‧Substrate

圖1是表示第一實施方式的鍍覆系統的整體的示意圖。 Fig. 1 is a schematic view showing the entire plating system of the first embodiment.

圖2是表示能夠在內部保持氧化銅粉體的粉體容器的側視圖。 Fig. 2 is a side view showing a powder container capable of holding copper oxide powder inside.

圖3是表示蓋被卸下、閥被打開的狀態的粉體容器的圖。 3 is a view showing a powder container in a state in which the lid is removed and the valve is opened.

圖4是密閉腔室的立體圖。 Figure 4 is a perspective view of a closed chamber.

圖5是表示密閉腔室的內部的圖。 Fig. 5 is a view showing the inside of a sealed chamber.

圖6是表示粉體容器的粉體導管的頂端和料斗的投入口的圖。 Fig. 6 is a view showing a tip end of a powder conduit of a powder container and an inlet of a hopper;

圖7是表示粉體容器的粉體導管的頂端與料斗的投入口緊貼的狀態的圖。 FIG. 7 is a view showing a state in which the tip end of the powder conduit of the powder container is in close contact with the inlet of the hopper.

圖8是表示氧化銅粉體的從粉體容器向料斗的供給工序的流程圖。 8 is a flow chart showing a supply process of a copper oxide powder from a powder container to a hopper.

圖9是表示料斗和送料器的側視圖。 Figure 9 is a side view showing the hopper and the feeder.

圖10是鍍覆液箱的立體圖。 Figure 10 is a perspective view of a plating solution tank.

圖11是鍍覆液箱的俯視圖。 Figure 11 is a plan view of the plating solution tank.

圖12是從圖11的箭頭A所示的方向觀察到的鍍覆液箱的縱剖視圖。 Fig. 12 is a longitudinal sectional view of the plating solution tank as seen from a direction indicated by an arrow A in Fig. 11;

圖13是表示鍍覆液箱的另一實施方式的示意圖。 Fig. 13 is a schematic view showing another embodiment of the plating solution tank.

圖14是表示鍍覆液箱的又一實施方式的示意圖。 Fig. 14 is a schematic view showing still another embodiment of the plating solution tank.

圖15是表示調查擋板的數量對氧化銅粉體的溶解帶來的影響的實驗結果的圖。 Fig. 15 is a graph showing the results of an experiment in which the influence of the number of the baffles on the dissolution of the copper oxide powder was investigated.

圖16是表示第二實施方式的鍍覆系統的整體的示意圖。 Fig. 16 is a schematic view showing the entire plating system of the second embodiment.

圖17是表示在第一實施方式的鍍覆系統中將氧化銅粉體向鍍覆液添加的控制順序的流程圖。 17 is a flow chart showing a control procedure for adding a copper oxide powder to a plating solution in the plating system of the first embodiment.

圖18是表示在第二實施方式的鍍覆系統中將氧化銅粉體向鍍覆液添加的控制順序的流程圖。 18 is a flow chart showing a control procedure for adding a copper oxide powder to a plating solution in the plating system of the second embodiment.

以下，參照圖式說明本發明的實施方式。圖1是表示第一實施方式的鍍覆系統的整體的示意圖。鍍覆系統具備設置於無塵室內的鍍覆裝置1和設置於樓下室的鍍覆液供給裝置20。在本實施方式中，鍍覆裝置1是用於將銅電解鍍覆於晶圓等基板上的電解鍍覆單元，鍍覆液供給裝置20 是用於將至少含有銅的粉體向在鍍覆裝置1中使用的鍍覆液供給的鍍覆液供給單元。在本實施方式中，作為至少含有銅的粉體，對使用了氧化銅粉體的例子進行記載，但能夠使用含有至少銅的顆粒狀的成形物。另外，本實施方式中的氧化銅粉末的平均粒徑是10微米~200微米的範圍，更佳為設為15微米~50微米的範圍。若平均粒徑過小，則有可能成為粉塵而易於飛散。相反，若平均粒徑過大，則在形成鍍覆液時的向溶液的溶解性也有可能變差。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a schematic view showing the entire plating system of the first embodiment. The plating system includes a plating apparatus 1 installed in the clean room and a plating liquid supply device 20 installed in the downstairs room. In the present embodiment, the plating apparatus 1 is an electrolytic plating unit for electrolytically plating copper onto a substrate such as a wafer, and the plating liquid supply device 20 It is a plating liquid supply unit for supplying a powder containing at least copper to the plating liquid used in the plating apparatus 1. In the present embodiment, an example in which a copper oxide powder is used as the powder containing at least copper is described. However, a pellet-shaped molded article containing at least copper can be used. Further, the average particle diameter of the copper oxide powder in the present embodiment is in the range of 10 μm to 200 μm, and more preferably in the range of 15 μm to 50 μm. If the average particle diameter is too small, it may become dust and be easily scattered. On the other hand, when the average particle diameter is too large, the solubility in a solution at the time of forming a plating liquid may worsen.

此外，在本說明書中，「粉體」、「粉末」至少含有固狀的粒子、成形的粒狀物、成形為顆粒狀的固形物、設為小粒徑的球體的銅固形物球、將固體狀的銅成形為緞帶或者細長帶狀而成的帶狀物、或由它們的任一個組合構成的混合物。 In addition, in the present specification, the "powder" and the "powder" include at least solid particles, formed pellets, solid particles formed into pellets, and copper solid pellets which are spheres having a small particle diameter, and The solid copper is formed into a ribbon of a ribbon or an elongated strip, or a mixture of any one of them.

鍍覆裝置1具有四個鍍覆槽2。各鍍覆槽2具備內槽5和外槽6。在內槽5內配置有保持於陽極保持件9的不溶解陽極8。而且，在鍍覆槽2中，在不溶解陽極8的周圍配置有中性膜(未圖示)。內槽5充滿鍍覆液，鍍覆液從內槽5溢流而流入外槽6。此外，在內槽5設置有攪拌棒(未圖示)，該攪拌棒由例如PVC(聚氯乙烯)、PP(聚丙烯)或PTFE(聚四氟乙烯)等樹脂、或由氟樹脂等包覆SUS(不鏽鋼)、鈦且板厚具有3mm~5mm的恒定的厚度的矩形板狀構件構成。該攪拌棒與基板W平行地進行往復運動而對鍍覆液進行攪拌，由此，能夠將充足的銅離子和添加劑向基板W的表面均勻地供給。 The plating apparatus 1 has four plating tanks 2. Each of the plating tanks 2 is provided with an inner tank 5 and an outer tank 6. An insoluble anode 8 held by the anode holder 9 is disposed in the inner tank 5. Further, in the plating tank 2, a neutral film (not shown) is disposed around the insoluble anode 8. The inner tank 5 is filled with a plating liquid, and the plating liquid overflows from the inner tank 5 and flows into the outer tank 6. Further, a stirring rod (not shown) is provided in the inner tank 5, and the stirring rod is made of a resin such as PVC (polyvinyl chloride), PP (polypropylene) or PTFE (polytetrafluoroethylene), or a fluororesin or the like. A rectangular plate-shaped member made of SUS (stainless steel) and titanium and having a constant thickness of 3 mm to 5 mm is formed. The stirring rod reciprocates in parallel with the substrate W to agitate the plating solution, whereby sufficient copper ions and additives can be uniformly supplied to the surface of the substrate W.

晶圓等基板W保持於基板保持件11，與基板保持件11一起浸漬於鍍覆槽2的內槽5內的鍍覆液中。另外，作為被鍍覆對象物的基板W能夠使用半導體基板、印刷配線板等。在此，在使用了例如半導體基板作為 基板W的情況下，半導體基板是平坦或實質上平坦的(此外，在本案說明書中，針對具有槽、管、抗蝕劑圖案等的基板，視作實質上平坦)。在對這樣的平坦的被鍍覆物進行鍍覆的情況下，需要一邊考慮要成膜的鍍覆膜的面內均勻性且要成膜的膜質不降低，一邊隨著時間變化地控制鍍覆條件。 The substrate W such as a wafer is held by the substrate holder 11 and immersed in the plating solution in the inner tank 5 of the plating tank 2 together with the substrate holder 11 . In addition, as the substrate W to be plated, a semiconductor substrate, a printed wiring board, or the like can be used. Here, for example, a semiconductor substrate is used as In the case of the substrate W, the semiconductor substrate is flat or substantially flat (in addition, in the present specification, a substrate having a groove, a tube, a resist pattern, or the like is considered to be substantially flat). When plating such a flat object to be plated, it is necessary to control the plating over time while considering the in-plane uniformity of the plating film to be formed and the film quality to be formed is not lowered. condition.

不溶解陽極8借助陽極保持件9與鍍覆電源15的正極電連接，保持於基板保持件11的基板W借助基板保持件11與鍍覆電源15的負極電連接。若利用鍍覆電源15對浸漬於鍍覆液的不溶解陽極8與基板W之間施加電壓，則在收容於鍍覆槽2內的鍍覆液中引起電化學反應，銅析出於基板W的表面上。這樣一來，基板W的表面被銅鍍覆。鍍覆裝置1也可以具備比四個少的、或比四個多的鍍覆槽2。 The insoluble anode 8 is electrically connected to the positive electrode of the plating power source 15 via the anode holder 9, and the substrate W held by the substrate holder 11 is electrically connected to the negative electrode of the plating power source 15 via the substrate holder 11. When a voltage is applied between the insoluble anode 8 and the substrate W immersed in the plating solution by the plating power source 15, an electrochemical reaction is caused in the plating solution accommodated in the plating tank 2, and copper is deposited on the substrate W. On the surface. In this way, the surface of the substrate W is plated with copper. The plating apparatus 1 may have less than four or more than four plating tanks 2.

鍍覆裝置1具備對基板W的鍍覆處理進行控制的鍍覆控制部17。該鍍覆控制部17具有根據在基板W中流動的電流的累積值對鍍覆槽2內的鍍覆液所含有的銅離子的濃度進行推算的功能。隨著基板W被鍍覆，鍍覆液中的銅被消耗。銅的消耗量與在基板W中流動的電流的累積值成正比。因而，鍍覆控制部17能夠根據電流的累積值對各鍍覆槽2的鍍覆液中的銅離子濃度進行推算。 The plating apparatus 1 includes a plating control unit 17 that controls the plating process of the substrate W. The plating control unit 17 has a function of estimating the concentration of copper ions contained in the plating solution in the plating tank 2 based on the cumulative value of the current flowing through the substrate W. As the substrate W is plated, copper in the plating solution is consumed. The consumption of copper is proportional to the cumulative value of the current flowing in the substrate W. Therefore, the plating control unit 17 can estimate the copper ion concentration in the plating solution of each plating tank 2 based on the accumulated value of the current.

鍍覆液供給裝置20具備：密閉腔室24，其供收容有氧化銅粉體的粉體容器21搬入；料斗27，其貯存從粉體容器21供給來的氧化銅粉體；送料器30，其與料斗27的下部開口連通；電動機31，其與送料器30連結；鍍覆液箱35，其與送料器30的出口連結，使氧化銅粉體溶解於鍍覆液；動作控制部32，其對電動機31的動作進行控制。送料器30被電動機31驅動。作為鍍覆液，可使用酸性的硫酸銅鍍覆液，在該酸性的硫酸銅鍍覆液中， 除了含有硫酸、硫酸銅和鹵離子(halide ion)之外，還含有作為添加劑的、由SPS(聚二硫二丙烷磺酸鈉)構成的鍍覆促進劑、由PEG(聚乙二醇)等構成的抑制劑、和由PEI(聚乙烯亞胺)等構成的均化劑(平滑化劑)的有機添加物。作為鹵離子，較佳為使用氯化物離子。 The plating solution supply device 20 includes a sealed chamber 24 for carrying in a powder container 21 in which copper oxide powder is accommodated, a hopper 27 for storing copper oxide powder supplied from the powder container 21, and a feeder 30. The motor 31 is connected to the lower opening of the hopper 27, and the electric motor 31 is coupled to the feeder 30. The plating liquid tank 35 is connected to the outlet of the feeder 30 to dissolve the copper oxide powder in the plating liquid. The operation control unit 32 It controls the operation of the motor 31. The feeder 30 is driven by the motor 31. As the plating solution, an acidic copper sulfate plating solution can be used, and in the acidic copper sulfate plating solution, In addition to sulfuric acid, copper sulfate, and halide ion, it also contains, as an additive, a plating accelerator composed of SPS (sodium polydithiodipropane sulfonate), PEG (polyethylene glycol), etc. An organic additive of a constituent inhibitor and a leveling agent (smoothing agent) composed of PEI (polyethyleneimine) or the like. As the halide ion, chloride ion is preferably used.

鍍覆裝置1和鍍覆液供給裝置20由鍍覆液供給管36和鍍覆液返回管37連接。更具體而言，鍍覆液供給管36從鍍覆液箱35延伸到鍍覆槽2的內槽5的底部。鍍覆液供給管36分支成四個分支管36a，四個分支管36a分別與四個鍍覆槽2的內槽5的底部連接。在四個分支管36a分別設置有流量計38和流量調節閥39，流量計38和流量調節閥39與鍍覆控制部17連接。鍍覆控制部17構成為，基於由流量計38測定出的鍍覆液的流量對流量調節閥39的開度進行控制。因而，經由四個分支管36a向各鍍覆槽2供給的鍍覆液的流量由設置於各鍍覆槽2的上游側的各流量調節閥39控制，這些流量大致相同。鍍覆液返回管37從鍍覆槽2的外槽6的底部延伸到鍍覆液箱35。鍍覆液返回管37具有與四個鍍覆槽2的外槽6的底部分別連接的四個排出管37a。 The plating apparatus 1 and the plating liquid supply apparatus 20 are connected by a plating liquid supply pipe 36 and a plating liquid return pipe 37. More specifically, the plating solution supply pipe 36 extends from the plating liquid tank 35 to the bottom of the inner tank 5 of the plating tank 2. The plating solution supply pipe 36 is branched into four branch pipes 36a, and the four branch pipes 36a are respectively connected to the bottoms of the inner tanks 5 of the four plating tanks 2. A flow meter 38 and a flow rate adjusting valve 39 are provided in each of the four branch pipes 36a, and the flow meter 38 and the flow rate adjusting valve 39 are connected to the plating control unit 17. The plating control unit 17 is configured to control the opening degree of the flow rate adjusting valve 39 based on the flow rate of the plating liquid measured by the flow meter 38. Therefore, the flow rate of the plating liquid supplied to each plating tank 2 via the four branch pipes 36a is controlled by the respective flow rate adjusting valves 39 provided on the upstream side of each plating tank 2, and these flow rates are substantially the same. The plating liquid return pipe 37 extends from the bottom of the outer tank 6 of the plating tank 2 to the plating liquid tank 35. The plating liquid return pipe 37 has four discharge pipes 37a connected to the bottoms of the outer tanks 6 of the four plating tanks 2, respectively.

在鍍覆液供給管36設置有用於移送鍍覆液的泵40和配置於泵40的下游側的過濾器41。在鍍覆裝置1中使用的鍍覆液經由鍍覆液返回管37向鍍覆液供給裝置20輸送，由鍍覆液供給裝置20將添加了氧化銅粉體的鍍覆液經由鍍覆液供給管36向鍍覆裝置1輸送。泵40既可以使鍍覆液在鍍覆裝置1與鍍覆液供給裝置20之間始終循環，或也可以是，使預先確定好的量的鍍覆液間歇地從鍍覆裝置1向鍍覆液供給裝置20輸送，使添加有氧化銅粉體的鍍覆液從鍍覆液供給裝置20向鍍覆裝置1間歇地返回。 The plating liquid supply pipe 36 is provided with a pump 40 for transferring the plating liquid and a filter 41 disposed on the downstream side of the pump 40. The plating liquid used in the plating apparatus 1 is transported to the plating liquid supply device 20 via the plating liquid return pipe 37, and the plating liquid to which the copper oxide powder is added is supplied from the plating liquid supply device 20 via the plating liquid. The tube 36 is conveyed to the plating apparatus 1. The pump 40 may circulate the plating solution between the plating device 1 and the plating solution supply device 20 at all times, or may cause a predetermined amount of the plating solution to intermittently be plated from the plating device 1 to the plating solution. The liquid supply device 20 is transported, and the plating liquid to which the copper oxide powder is added is intermittently returned from the plating liquid supply device 20 to the plating device 1.

而且，為了向鍍覆液中補充純水(DIW)，純水供給管線42 與鍍覆液箱35連接。在該純水供給管線42配置有用於在使鍍覆裝置1停止時等使純水供給停止的開閉閥43(通常設為開)、用於對純水的流量進行測定的流量計44、用於對純水的流量進行調節的流量調節閥47。該流量計44和流量調節閥47與鍍覆控制部17連接。在鍍覆液中的銅離子濃度超過了設定值的情況下，為了稀釋鍍覆液，鍍覆控制部17構成為對流量調節閥47的開度進行控制而將純水向鍍覆液箱35供給。 Moreover, in order to replenish pure water (DIW) to the plating solution, the pure water supply line 42 It is connected to the plating liquid tank 35. The pure water supply line 42 is provided with an on-off valve 43 (normally opened) for stopping the supply of pure water when the plating apparatus 1 is stopped, and a flow meter 44 for measuring the flow rate of the pure water. A flow regulating valve 47 that regulates the flow rate of pure water. The flow meter 44 and the flow rate adjusting valve 47 are connected to the plating control unit 17. When the copper ion concentration in the plating solution exceeds the set value, the plating control unit 17 is configured to control the opening degree of the flow rate adjusting valve 47 to transfer the pure water to the plating liquid tank 35 in order to dilute the plating liquid. supply.

鍍覆控制部17與鍍覆液供給裝置20的動作控制部32連接。若鍍覆液中的銅離子濃度低於設定值，則鍍覆控制部17將表示補充要求值的信號向鍍覆液供給裝置20的動作控制部32發送。收到該信號，鍍覆液供給裝置20將氧化銅粉體向鍍覆液添加直到氧化銅粉體的添加量達到補充要求值為止。在本實施方式中，鍍覆控制部17和動作控制部32構成為獨立的裝置，但在一實施方式中，鍍覆控制部17和動作控制部32也可以構成為一個控制部。在該情況下，控制部也可以是按照程式動作的電腦。該程式也可以存放於記憶媒體。 The plating control unit 17 is connected to the operation control unit 32 of the plating solution supply device 20. When the copper ion concentration in the plating solution is lower than the set value, the plating control unit 17 transmits a signal indicating the supplementary request value to the operation control unit 32 of the plating liquid supply device 20. Upon receiving this signal, the plating solution supply device 20 adds the copper oxide powder to the plating solution until the amount of addition of the copper oxide powder reaches the replenishment request value. In the present embodiment, the plating control unit 17 and the operation control unit 32 are configured as separate devices. However, in one embodiment, the plating control unit 17 and the operation control unit 32 may be configured as one control unit. In this case, the control unit may be a computer that operates in accordance with the program. The program can also be stored on a memory medium.

鍍覆裝置1也可以具備對鍍覆液中的銅離子濃度進行測定的濃度測定器18a。濃度測定器18a分別安裝於鍍覆液返回管37的四個排出管37a。由濃度測定器18a獲得的銅離子濃度的測定值向鍍覆控制部17發送。鍍覆控制部17既可以將根據電流的累積值推算出的鍍覆液中的銅離子濃度與上述設定值進行比較，或也可以將由濃度測定器18a測定出的銅離子濃度與上述設定值進行比較。鍍覆控制部17也可以基於根據電流的累積值推算出的鍍覆液中的銅離子濃度(即銅離子濃度的推算值)和由濃度測定器18a測定出的銅離子濃度(即銅離子濃度的測定值)之間的比較來對銅離子濃度 的推算值校正。也可以是，例如：鍍覆控制部17透過用銅離子濃度的推算值除銅離子濃度的測定值來決定校正係數，該校正係數乘銅離子濃度的推算值，從而對銅離子濃度的推算值進行校正。較佳為定期地更新校正係數。 The plating apparatus 1 may include a concentration measuring device 18a that measures the concentration of copper ions in the plating solution. The concentration measuring devices 18a are attached to the four discharge pipes 37a of the plating liquid return pipe 37, respectively. The measured value of the copper ion concentration obtained by the concentration measuring device 18a is transmitted to the plating control unit 17. The plating control unit 17 may compare the copper ion concentration in the plating solution calculated from the cumulative value of the current with the set value, or may perform the copper ion concentration measured by the concentration measuring device 18a and the set value. Comparison. The plating control unit 17 may be based on the copper ion concentration (ie, the estimated value of the copper ion concentration) in the plating solution calculated from the cumulative value of the current and the copper ion concentration measured by the concentration measuring device 18a (ie, the copper ion concentration). Comparison between measured values) for copper ion concentration The estimated value is corrected. For example, the plating control unit 17 may determine the correction coefficient by dividing the measured value of the copper ion concentration by the estimated value of the copper ion concentration, and the correction coefficient is obtained by multiplying the estimated value of the copper ion concentration to estimate the copper ion concentration. Make corrections. Preferably, the correction factor is updated periodically.

另外，能夠在鍍覆液供給管36設置有分支管36b，且在該分支管36b設置有濃度測定器18b來對鍍覆液中的銅離子濃度進行監控，也可以在該分支管36b設置有分析裝置(例如CVS(定容取樣)裝置、比色計等)來不僅對銅離子進行定量分析、監視，還對各種化學成分的溶解濃度進行定量分析、監視。只要如此構成，能夠在向各鍍覆槽2供給鍍覆液之前對處於鍍覆液供給管36的鍍覆液中的化學成分、例如雜質的濃度進行分析，因此，能夠防止溶解雜質對鍍覆性能產生影響，更可靠地進行精度更好的鍍覆處理。也可以僅設置濃度測定器18a、18b中的任一者。 Further, the plating liquid supply pipe 36 may be provided with a branch pipe 36b, and the branch pipe 36b may be provided with a concentration measuring device 18b to monitor the copper ion concentration in the plating liquid, or may be provided in the branch pipe 36b. An analysis device (for example, a CVS (constant-capacitance sampling) device, a colorimeter, or the like) not only quantitatively analyzes and monitors copper ions, but also quantitatively analyzes and monitors dissolved concentrations of various chemical components. According to this configuration, the concentration of chemical components, for example, impurities in the plating solution in the plating solution supply pipe 36 can be analyzed before the plating solution is supplied to each plating tank 2, so that the dissolved impurities can be prevented from being plated. Performance has an impact, and a more accurate plating process is performed more reliably. It is also possible to provide only one of the concentration measuring devices 18a, 18b.

利用上述那樣的結構，在第一實施方式的鍍覆系統中，可使鍍覆液中所含有的銅離子濃度在鍍覆槽2間實質上相同來進行銅的向鍍覆液的補充。 With the above-described configuration, in the plating system of the first embodiment, the concentration of copper ions contained in the plating solution can be substantially the same between the plating tanks 2, and the copper can be replenished to the plating solution.

圖2是表示能夠在內部保持氧化銅粉體的粉體容器21的側視圖。如圖2所示，粉體容器21具備：容器主體45，其能夠在內部收容氧化銅粉體；粉體導管46，其與容器主體45連接；閥48，其安裝於粉體導管46。容器主體45由聚乙烯等合成樹脂構成。在容器主體45形成有把手49，作業人員能夠抓住把手49來搬運粉體容器21。粉體容器21的容量沒有特別限定，是作業人員能夠搬運填充有氧化銅粉體的粉體容器21的程度的容量。在一個例子中，粉體容器21的容量是4L。作為向粉體容器21填充的氧化銅，不僅是沒有成形的氧化銅粉體，也可以是由氧化銅粉體成形的顆粒(粒狀 物)。在使用成形為顆粒狀的氧化銅粉體的情況下，能夠更有效地抑制粉塵的飛散。 FIG. 2 is a side view showing the powder container 21 in which the copper oxide powder can be held inside. As shown in FIG. 2, the powder container 21 is provided with a container body 45 which can accommodate copper oxide powder inside, a powder conduit 46 which is connected to the container body 45, and a valve 48 which is attached to the powder conduit 46. The container body 45 is made of a synthetic resin such as polyethylene. A handle 49 is formed in the container body 45, and the worker can grasp the handle 49 to carry the powder container 21. The capacity of the powder container 21 is not particularly limited, and is a capacity that allows an operator to carry the powder container 21 filled with the copper oxide powder. In one example, the capacity of the powder container 21 is 4L. The copper oxide to be filled into the powder container 21 is not only a copper oxide powder which is not formed, but also a pellet formed of copper oxide powder (granular shape). ()). When the copper oxide powder formed into a pellet shape is used, the scattering of dust can be more effectively suppressed.

粉體導管46利用例如焊接這樣的接合手段與容器主體45接合。粉體導管46由允許氧化銅粉體的通過的配管構成。該粉體導管46相對於鉛垂方向以約30度的角度傾斜。若將安裝於粉體導管46的閥48打開，則氧化銅粉體能夠通過粉體導管46，若關閉閥48，則氧化銅粉體無法通過粉體導管46。圖2表示閥48關閉的狀態。在粉體導管46的頂端46a安裝有蓋子(即蓋)50。 The powder conduit 46 is joined to the container body 45 by a joining means such as welding. The powder conduit 46 is composed of a pipe that allows the passage of the copper oxide powder. The powder conduit 46 is inclined at an angle of about 30 degrees with respect to the vertical direction. When the valve 48 attached to the powder conduit 46 is opened, the copper oxide powder can pass through the powder conduit 46, and if the valve 48 is closed, the copper oxide powder cannot pass through the powder conduit 46. Fig. 2 shows a state in which the valve 48 is closed. A cover (i.e., a cover) 50 is attached to the top end 46a of the powder conduit 46.

圖3是表示蓋子50被卸下、閥48被打開了的狀態的粉體容器21的圖。氧化銅粉體經由粉體導管46被投入處於圖3的狀態的粉體容器21。若氧化銅粉體的投入結束，則閥48關閉，蓋子50安裝於粉體導管46的頂端(參照圖2)。填充有氧化銅粉體的粉體容器21在閥48關閉的狀態下向圖1所示的密閉腔室24內搬入。 FIG. 3 is a view showing the powder container 21 in a state in which the cover 50 is removed and the valve 48 is opened. The copper oxide powder is introduced into the powder container 21 in the state of FIG. 3 via the powder conduit 46. When the input of the copper oxide powder is completed, the valve 48 is closed, and the cover 50 is attached to the tip end of the powder conduit 46 (see Fig. 2). The powder container 21 filled with the copper oxide powder is carried into the sealed chamber 24 shown in Fig. 1 in a state where the valve 48 is closed.

圖4是密閉腔室24的立體圖。在本實施方式中，密閉腔室24是能夠在其內部形成密閉了的空間的矩形形狀的箱。密閉腔室24具備：門55，上述粉體容器21能夠經由該門55搬入該密閉腔室24的內部空間；兩個手套式構件56，其構成密閉腔室24的壁的一部分。另外，為了使密閉腔室24內密閉，供門55安裝的安裝框由具有密封功能的橡膠等構件構成。手套式構件56由膜構成，該膜由可隨著作業人員的手的形狀變形的柔軟的原材料(例如氯乙烯等合成橡膠)構成，手套式構件56之主體突出到密閉腔室24內，以便作業人員能夠在密閉腔室24內部作業。這兩個手套式構件56配置於門55的兩側。密閉腔室24具備用於使其內部空間與負壓源連通的排氣 口58。負壓源是例如真空泵。密閉腔室24的內部經由排氣口58形成負壓。 FIG. 4 is a perspective view of the sealed chamber 24. In the present embodiment, the sealed chamber 24 is a rectangular shaped box in which a sealed space can be formed inside. The sealed chamber 24 includes a door 55 through which the powder container 21 can be carried into the internal space of the sealed chamber 24, and two glove members 56 constituting a part of the wall of the sealed chamber 24. Further, in order to seal the inside of the sealed chamber 24, the mounting frame to which the door 55 is attached is constituted by a member such as rubber having a sealing function. The glove member 56 is composed of a film composed of a soft raw material (for example, a synthetic rubber such as vinyl chloride) which can be deformed in accordance with the shape of the hand of the author, and the main body of the glove member 56 protrudes into the sealed chamber 24 so that The worker can work inside the sealed chamber 24. These two glove members 56 are disposed on both sides of the door 55. The hermetic chamber 24 is provided with exhaust gas for communicating the internal space thereof with a negative pressure source Mouth 58. The source of negative pressure is, for example, a vacuum pump. The inside of the hermetic chamber 24 forms a negative pressure via the exhaust port 58.

圖5是表示密閉腔室24的內部的圖。在密閉腔室24內配置有：真空夾具61，其利用真空吸引保持粉體容器21；振動裝置(振動器)65，其使粉體容器21振動；底座66，其支承粉體容器21。粉體容器21以粉體導管46朝向下方的狀態設置於真空夾具61和底座66。真空夾具61固定於框架68，振動裝置65固定於真空夾具61。真空夾具61具有與粉體容器21接觸的防振橡膠61a。在該防振橡膠61a形成有通孔(未圖示)，該通孔在內部形成真空。振動裝置65和真空夾具61的動作可由圖1所示的動作控制部32控制。 FIG. 5 is a view showing the inside of the sealed chamber 24. In the sealed chamber 24, a vacuum jig 61 that holds the powder container 21 by vacuum suction, a vibration device (vibrator) 65 that vibrates the powder container 21, and a base 66 that supports the powder container 21 are disposed. The powder container 21 is provided in the vacuum jig 61 and the base 66 in a state in which the powder duct 46 faces downward. The vacuum clamp 61 is fixed to the frame 68, and the vibration device 65 is fixed to the vacuum clamp 61. The vacuum chuck 61 has a vibration-proof rubber 61a that is in contact with the powder container 21. A through hole (not shown) is formed in the anti-vibration rubber 61a, and the through hole forms a vacuum inside. The operation of the vibration device 65 and the vacuum jig 61 can be controlled by the operation control unit 32 shown in Fig. 1 .

真空夾具61與作為真空產生裝置的噴射器(ejector)70連接。噴射器70和振動裝置65連接於壓縮空氣供給管72。壓縮空氣供給管72分支成兩個，一個與噴射器70連接，另一個與振動裝置65連接。若壓縮空氣向噴射器70輸送，則噴射器70在真空夾具61內形成真空，粉體容器21利用真空吸引而保持於真空夾具61的防振橡膠61a。振動裝置65具有利用壓縮空氣進行工作的構造。振動裝置65將振動經由真空夾具61向粉體容器21傳遞，使保持於真空夾具61的粉體容器21振動。構成為振動裝置65的頻率由鍍覆液供給裝置20的振動控制部(未圖示)控制。振動控制部也可以由動作控制部32構成。振動裝置65也可以與粉體容器21的側面直接接觸。在一實施方式中，振動裝置65也可以是電動式振動裝置。 The vacuum jig 61 is connected to an ejector 70 as a vacuum generating device. The injector 70 and the vibration device 65 are connected to the compressed air supply pipe 72. The compressed air supply pipe 72 is branched into two, one connected to the injector 70 and the other connected to the vibration device 65. When the compressed air is sent to the ejector 70, the ejector 70 forms a vacuum in the vacuum jig 61, and the powder container 21 is held by the vibration-proof rubber 61a of the vacuum jig 61 by vacuum suction. The vibration device 65 has a configuration that operates with compressed air. The vibration device 65 transmits the vibration to the powder container 21 via the vacuum jig 61, and vibrates the powder container 21 held by the vacuum jig 61. The frequency of the vibration device 65 is controlled by a vibration control unit (not shown) of the plating solution supply device 20. The vibration control unit may be configured by the motion control unit 32. The vibration device 65 may also be in direct contact with the side surface of the powder container 21. In an embodiment, the vibration device 65 may also be an electric vibration device.

在密閉腔室24內配置有可與粉體容器21連結的料斗27的投入口26。粉體容器21的粉體導管46的頂端46a(參照圖3)***料斗27的投入口26(參照圖6和圖7)，由此，粉體容器21的粉體導管46的頂端46a與料 斗27的投入口26連結。若在粉體導管46和投入口26連結起來的狀態下打開閥48(參照圖7)，則粉體容器21內的氧化銅粉體經由粉體導管46流入投入口26，最終向料斗27內落下。 An input port 26 of the hopper 27 connectable to the powder container 21 is disposed in the sealed chamber 24. The tip end 46a (see FIG. 3) of the powder conduit 46 of the powder container 21 is inserted into the inlet port 26 of the hopper 27 (see FIGS. 6 and 7), whereby the tip end 46a of the powder conduit 46 of the powder container 21 is filled with the material. The input port 26 of the bucket 27 is connected. When the valve 48 (see FIG. 7) is opened in a state where the powder conduit 46 and the inlet port 26 are connected to each other, the copper oxide powder in the powder container 21 flows into the inlet port 26 via the powder conduit 46, and finally flows into the hopper 27. fall.

在粉體容器21內的粉體導管46附近，有時產生氧化銅粉體的橋接現象。橋接現象是粉體的密度提高而將粉體容器21封閉的現象。為了防止這樣的橋接現象，振動裝置65使粉體容器21振動，使粉體容器21內的氧化銅粉體流動化。振動裝置65的振動範圍較佳為每分鐘1000次~10000次，更佳是每分鐘7000次~8000次。 In the vicinity of the powder conduit 46 in the powder container 21, a bridging phenomenon of the copper oxide powder may occur. The bridging phenomenon is a phenomenon in which the density of the powder is increased to close the powder container 21. In order to prevent such a bridging phenomenon, the vibrating device 65 vibrates the powder container 21 to fluidize the copper oxide powder in the powder container 21. The vibration range of the vibrating device 65 is preferably from 1,000 to 10,000 times per minute, more preferably from 7,000 to 8,000 times per minute.

在粉體導管46與料斗27的投入口26連接時的粉體容器21整體上傾斜那樣的位置，粉體導管46安裝於粉體容器21。具體而言，在粉體導管46連接到料斗27的投入口26時，粉體容器21的一個側面相對於水平面以50度~70度的角度傾斜，另一個側面相對於水平面以20度~40度的角度傾斜。這樣，在粉體導管46連接到料斗27的投入口26時，粉體容器21的兩側面朝向粉體導管46在粉體導管46的左側和右側以不同的角度傾斜，因此，集中於粉體導管46附近的粉體的壓力在粉體導管46的左側和右側不同。因而，能夠有效地防止橋接現象的產生，結果，氧化銅粉體被迅速地排出，且氧化銅粉體難以殘留於粉體容器21內。 The powder container 21 is attached to the powder container 21 at a position where the powder container 21 is inclined as a whole when the powder conduit 46 is connected to the inlet port 26 of the hopper 27. Specifically, when the powder conduit 46 is connected to the input port 26 of the hopper 27, one side of the powder container 21 is inclined at an angle of 50 to 70 degrees with respect to the horizontal plane, and the other side is 20 to 40 with respect to the horizontal plane. The angle of the angle is inclined. Thus, when the powder conduit 46 is connected to the input port 26 of the hopper 27, both side faces of the powder container 21 are inclined at different angles to the left and right sides of the powder conduit 46 toward the powder conduit 46, and therefore, concentrate on the powder. The pressure of the powder near the conduit 46 is different on the left and right sides of the powder conduit 46. Therefore, it is possible to effectively prevent the occurrence of the bridging phenomenon, and as a result, the copper oxide powder is quickly discharged, and it is difficult for the copper oxide powder to remain in the powder container 21.

圖6是表示粉體容器21的粉體導管46的頂端46a和料斗27的投入口26的圖。粉體導管46的頂端46a具有圓錐台形狀。料斗27的投入口26具有與粉體導管46的頂端46a的形狀相對應的形狀。更具體而言，料斗27的投入口26具有隨著距料斗27的投入口26的頂端(上端)的距離變大而口徑逐漸變小的連接密封件28。該連接密封件28由橡膠等彈性材料構成。如圖7 所示，若將粉體導管46的頂端46a***料斗27的投入口26，則粉體導管46的頂端46a與投入口26的連接密封件28緊貼，粉體導管46的頂端46a與料斗27的投入口26之間的間隙被連接密封件28密封。因而，可防止氧化銅粉體的飛散。 FIG. 6 is a view showing the distal end 46a of the powder conduit 46 of the powder container 21 and the inlet port 26 of the hopper 27. The tip end 46a of the powder conduit 46 has a truncated cone shape. The inlet port 26 of the hopper 27 has a shape corresponding to the shape of the tip end 46a of the powder conduit 46. More specifically, the inlet port 26 of the hopper 27 has a connection seal 28 whose diameter gradually decreases as the distance from the tip end (upper end) of the inlet port 26 of the hopper 27 increases. The connection seal 28 is made of an elastic material such as rubber. Figure 7 As shown in the figure, when the tip end 46a of the powder conduit 46 is inserted into the inlet port 26 of the hopper 27, the tip end 46a of the powder conduit 46 is in close contact with the connection seal 28 of the inlet port 26, and the tip end 46a of the powder conduit 46 and the hopper 27 are shown. The gap between the input ports 26 is sealed by the connection seal 28. Therefore, scattering of the copper oxide powder can be prevented.

參照圖8說明氧化銅粉體從粉體容器21向料斗27的供給作業。在步驟1中，準備在內部填充有氧化銅粉體的粉體容器21。在步驟2中，打開密閉腔室24的門55，在步驟3中，將粉體容器21放入密閉腔室24內。在步驟4中，將門55關閉，在步驟5中，作業人員安裝手套式構件56，卸下密閉腔室24內的粉體容器21的蓋子50。在步驟6中，將粉體容器21的粉體導管46與料斗27的投入口26連接，在步驟7中，打開粉體容器21的閥48，在步驟8中，一邊利用真空夾具61保持粉體容器21一邊利用振動裝置65使粉體容器21振動。粉體容器21內的氧化銅粉體經由投入口26向料斗27內供給。若氧化銅粉體的供給結束，則在步驟9中，使粉體容器21的振動停止，在步驟10中，將閥48關閉，在步驟11中，使由真空夾具61進行的粉體容器21的真空吸引停止。在步驟12中，將粉體容器21從真空夾具61和底座66卸下，在步驟13中，將蓋子50安裝於粉體導管46。然後，在步驟14中，將門55打開，在步驟15中，將粉體容器21從密閉腔室24取出。 The supply operation of the copper oxide powder from the powder container 21 to the hopper 27 will be described with reference to Fig. 8 . In the step 1, a powder container 21 filled with copper oxide powder inside is prepared. In step 2, the door 55 of the closed chamber 24 is opened, and in step 3, the powder container 21 is placed in the closed chamber 24. In step 4, the door 55 is closed, and in step 5, the operator installs the glove member 56 to remove the cover 50 of the powder container 21 in the sealed chamber 24. In step 6, the powder conduit 46 of the powder container 21 is connected to the inlet port 26 of the hopper 27, and in step 7, the valve 48 of the powder container 21 is opened, and in step 8, the powder is held by the vacuum jig 61. The body container 21 vibrates the powder container 21 by the vibration device 65. The copper oxide powder in the powder container 21 is supplied into the hopper 27 via the inlet port 26. When the supply of the copper oxide powder is completed, the vibration of the powder container 21 is stopped in step 9. In step 10, the valve 48 is closed, and in step 11, the powder container 21 by the vacuum jig 61 is caused. The vacuum suction stops. In step 12, the powder container 21 is detached from the vacuum jig 61 and the base 66, and in step 13, the cover 50 is attached to the powder conduit 46. Then, in step 14, the door 55 is opened, and in step 15, the powder container 21 is taken out from the sealed chamber 24.

從上述的步驟1到步驟15的全部的步驟以在密閉腔室24內形成有負壓的狀態進行。另外，從打開閥48到關閉閥48為止，粉體容器21位於密閉腔室24內。因而，即使氧化銅粉體從粉體容器21灑落，氧化銅粉體也不會從密閉腔室24洩漏。料斗27的容量是粉體容器21的容量的數倍，因此，反復進行上述的步驟1~步驟15直到充分的量的氧化銅粉體貯存於料斗 27內為止。 All of the steps from the above-described step 1 to step 15 are performed in a state in which a negative pressure is formed in the sealed chamber 24. Further, the powder container 21 is located in the sealed chamber 24 from the opening of the valve 48 to the closing of the valve 48. Therefore, even if the copper oxide powder is sprinkled from the powder container 21, the copper oxide powder does not leak from the sealed chamber 24. Since the capacity of the hopper 27 is several times the capacity of the powder container 21, the above steps 1 to 15 are repeated until a sufficient amount of copper oxide powder is stored in the hopper. Up to 27.

接著，說明料斗27和送料器30。圖9是表示料斗27和送料器30的側視圖。料斗27是粉體貯存器(或顆粒貯存器)，從粉體容器21供給來的氧化銅粉體可貯存於料斗27的內部。料斗27的下半部分具有圓錐台形狀，氧化銅粉體易於向下方流動。料斗27的上端開口由蓋74覆蓋。供上述的粉體容器21的粉體導管46連接的投入口26固定於蓋74。而且，在蓋74固定有排氣管75。該排氣管75與料斗27的內部空間連通，而且，與未圖示的負壓源連通。因而，經由排氣管75在料斗27的內部空間形成負壓。 Next, the hopper 27 and the feeder 30 will be described. FIG. 9 is a side view showing the hopper 27 and the feeder 30. The hopper 27 is a powder reservoir (or a particle reservoir), and the copper oxide powder supplied from the powder container 21 can be stored in the inside of the hopper 27. The lower half of the hopper 27 has a truncated cone shape, and the copper oxide powder easily flows downward. The upper end opening of the hopper 27 is covered by a cover 74. The inlet port 26 to which the powder conduit 46 of the powder container 21 described above is connected is fixed to the lid 74. Further, an exhaust pipe 75 is fixed to the cover 74. The exhaust pipe 75 communicates with the internal space of the hopper 27 and communicates with a negative pressure source (not shown). Thus, a negative pressure is formed in the internal space of the hopper 27 via the exhaust pipe 75.

送料器30與料斗27的下部開口連通。在本實施方式中，送料器30是具備螺桿31a的螺桿送料器。電動機31與送料器30連結，送料器30被電動機31驅動。料斗27和送料器30固定於托架(bracket)73，而且，托架73被重量測定器80支承。重量測定器80構成為，對料斗27、送料器30、電動機31、以及存在於料斗27和送料器30的內部的氧化銅粉體的總重量進行測定。 The feeder 30 communicates with the lower opening of the hopper 27. In the present embodiment, the feeder 30 is a screw feeder including a screw 31a. The motor 31 is coupled to the feeder 30, and the feeder 30 is driven by the motor 31. The hopper 27 and the feeder 30 are fixed to a bracket 73, and the bracket 73 is supported by the weight measuring device 80. The weight measuring device 80 is configured to measure the total weight of the hopper 27, the feeder 30, the motor 31, and the copper oxide powder existing inside the hopper 27 and the feeder 30.

送料器30的出口30b與鍍覆液箱35連結。若電動機31驅動送料器30，則料斗27內的氧化銅粉體被送料器30向鍍覆液箱35輸送。包圍送料器30與鍍覆液箱35之間的連接部的包圍罩81固定於鍍覆液箱35。送料器30的出口30b位於包圍罩81內。包圍罩81與不活潑氣體供給管線83連接，不活潑氣體供給管線83與包圍罩81的內部連通。不活潑氣體供給管線83將氮氣等不活潑氣體向包圍罩81的內部供給，不活潑氣體充滿包圍罩81的內部。 The outlet 30b of the feeder 30 is coupled to the plating liquid tank 35. When the motor 31 drives the feeder 30, the copper oxide powder in the hopper 27 is transported to the plating tank 35 by the feeder 30. The envelope cover 81 that surrounds the connection portion between the feeder 30 and the plating liquid tank 35 is fixed to the plating liquid tank 35. The outlet 30b of the feeder 30 is located within the enclosure cover 81. The enclosure cover 81 is connected to the inert gas supply line 83, and the inert gas supply line 83 communicates with the inside of the enclosure cover 81. The inert gas supply line 83 supplies an inert gas such as nitrogen gas to the inside of the envelope 81, and the inert gas fills the inside of the envelope 81.

將不活潑氣體向包圍罩81的內部供給的理由如下所述。存在以貯存於鍍覆液箱35的鍍覆液維持在高溫的方式進行運轉的情況。在這樣的情況下，從鍍覆液產生蒸氣。該蒸氣上升而到達送料器30與鍍覆液箱35 之間的連接部，而且，經由送料器30的出口30b進入送料器30內。若蒸氣吸附於送料器30內的氧化銅粉體，則氧化銅粉體有可能凝聚而使送料器30封閉。因此，在這樣的情況下，透過將氮氣等不活潑氣體注入包圍罩81內，將蒸氣壓下，防止蒸氣進入送料器30內。 The reason why the inert gas is supplied to the inside of the envelope 81 is as follows. There is a case where the plating liquid stored in the plating liquid tank 35 is maintained at a high temperature. In such a case, steam is generated from the plating solution. The vapor rises to reach the feeder 30 and the plating tank 35 The connection between the two is also entered into the feeder 30 via the outlet 30b of the feeder 30. When the vapor is adsorbed to the copper oxide powder in the feeder 30, the copper oxide powder may aggregate and the feeder 30 may be closed. Therefore, in such a case, by injecting an inert gas such as nitrogen into the surrounding cover 81, the vapor is pressed down to prevent the vapor from entering the feeder 30.

重量測定器80與對電動機31的動作進行控制的動作控制部32連接，從重量測定器80輸出來的重量的測定值向動作控制部32發送。動作控制部32接收從鍍覆裝置1(參照圖1)發送的表示補充要求值的信號，根據從重量測定器80輸出來的重量的測定值的變化，對氧化銅粉體向鍍覆液箱35內的鍍覆液的添加量進行推算，使電動機31動作直到氧化銅粉體的添加量達到補充要求值為止。電動機31驅動送料器30，送料器30將與補充要求值相對應的量的氧化銅粉體向鍍覆液箱35添加。補充要求值是以反映被收容於鍍覆槽2的鍍覆液中的銅離子消耗量的方式隨著鍍覆液的銅離子濃度可變化的值，表示應該向收容於鍍覆液箱35的鍍覆液添加的氧化銅粉體的量的目標值。 The weight measuring device 80 is connected to the operation control unit 32 that controls the operation of the motor 31, and the measured value of the weight output from the weight measuring device 80 is transmitted to the operation control unit 32. The operation control unit 32 receives a signal indicating the supplementary request value transmitted from the plating apparatus 1 (see FIG. 1), and applies the copper oxide powder to the plating liquid tank based on the change in the measured value of the weight output from the weight measuring device 80. The amount of plating solution added in 35 is estimated, and the motor 31 is operated until the amount of addition of the copper oxide powder reaches the supplementary request value. The electric motor 31 drives the feeder 30, and the feeder 30 adds the amount of the copper oxide powder corresponding to the replenishment request value to the plating liquid tank 35. The replenishment request value is a value that changes with the copper ion concentration of the plating solution so as to reflect the amount of copper ions consumed in the plating solution contained in the plating tank 2, and indicates that it should be accommodated in the plating liquid tank 35. The target value of the amount of copper oxide powder added to the plating solution.

若鍍覆槽2內的鍍覆液中的銅離子濃度低於設定值，則鍍覆控制部17根據鍍覆槽2內的鍍覆液中的銅離子濃度對補充要求值進行推算。作為鍍覆槽2內的鍍覆液中的銅離子濃度，如上所述，能夠使用根據電流的累積值推算出的鍍覆液中的銅離子濃度、或由濃度測定器18a和/或濃度測定器18b測定出的銅離子濃度。 When the copper ion concentration in the plating solution in the plating tank 2 is lower than the set value, the plating control unit 17 estimates the replenishment request value based on the copper ion concentration in the plating solution in the plating tank 2. As described above, the copper ion concentration in the plating solution in the plating tank 2 can be measured by the concentration of the copper ion in the plating solution calculated from the cumulative value of the current or by the concentration measuring device 18a and/or the concentration. The copper ion concentration measured by the device 18b.

若大量的氧化銅粉體在短時間添加於鍍覆液中，則有氧化銅粉體在鍍覆液中溶解之前凝聚，氧化銅粉體不完全溶解的擔憂。另外，若送料器30的螺桿30a的旋轉速度過高，則有可能氧化銅粉體在送料器30內凝 聚，形成難以溶於鍍覆液的氧化銅粉體的塊。因此，為了防止這樣的氧化銅粉體的凝聚體、塊的形成，較佳為設定螺桿30a的旋轉速度的上限值。更具體而言，動作控制部32較佳為對電動機31進行控制，以使螺桿30a以預先設定好的上限值以下的旋轉速度旋轉。 When a large amount of copper oxide powder is added to the plating solution for a short period of time, there is a concern that the copper oxide powder aggregates before being dissolved in the plating solution, and the copper oxide powder is not completely dissolved. Further, if the rotational speed of the screw 30a of the feeder 30 is too high, there is a possibility that the copper oxide powder is condensed in the feeder 30. Agglomerates to form a block of copper oxide powder which is hardly soluble in the plating solution. Therefore, in order to prevent the formation of aggregates and blocks of such copper oxide powder, it is preferable to set the upper limit of the rotational speed of the screw 30a. More specifically, the operation control unit 32 preferably controls the motor 31 so that the screw 30a rotates at a rotation speed equal to or lower than a preset upper limit value.

在料斗27內的氧化銅粉體的殘量較少的情況下，較佳為動作控制部32發出警報。更具體而言，若從重量測定器80輸出來的重量的測定值低於下限值，較佳的是動作控制部32發出警報。 When the residual amount of the copper oxide powder in the hopper 27 is small, it is preferable that the operation control unit 32 issues an alarm. More specifically, when the measured value of the weight output from the weight measuring device 80 is lower than the lower limit value, it is preferable that the operation control unit 32 issues an alarm.

接著，說明鍍覆液箱35。圖10是鍍覆液箱35的立體圖，圖11是鍍覆液箱35的俯視圖，圖12是從圖11的箭頭A所示的方向觀察到的鍍覆液箱35的縱剖視圖。鍍覆液箱35具備：攪拌槽91，其配置有攪拌機85；及溢流槽92，其與設置於該攪拌槽91的下部的連通孔95連接。溢流槽92經由連通孔95與攪拌槽91連通。連接到圖1所示的鍍覆槽2的鍍覆液返回管37與攪拌槽91連接。因而，在圖1的鍍覆裝置1中使用的鍍覆液返回攪拌槽91。 Next, the plating solution tank 35 will be described. FIG. 10 is a perspective view of the plating liquid tank 35, FIG. 11 is a plan view of the plating liquid tank 35, and FIG. 12 is a longitudinal cross-sectional view of the plating liquid tank 35 as seen from a direction indicated by an arrow A in FIG. The plating solution tank 35 includes a stirring tank 91 in which a mixer 85 is disposed, and an overflow tank 92 connected to a communication hole 95 provided in a lower portion of the stirring tank 91. The overflow tank 92 communicates with the agitation tank 91 via the communication hole 95. The plating liquid return pipe 37 connected to the plating tank 2 shown in Fig. 1 is connected to the stirring tank 91. Therefore, the plating liquid used in the plating apparatus 1 of FIG. 1 is returned to the stirring tank 91.

送料器30的出口30b位於攪拌槽91的上方，從送料器30供給的氧化銅粉體被投入攪拌槽91。攪拌機85具備：配置於攪拌槽91的內部的攪拌葉片86；及連結到攪拌葉片86的電動機87。電動機87透過使攪拌葉片86旋轉，能夠使氧化銅粉體溶解於鍍覆液。攪拌機85的動作由上述的動作控制部32控制。溢流槽92與攪拌槽91鄰接。添加有氧化銅粉體的鍍覆液從攪拌槽91經由連通孔95流入溢流槽92。為了防止不溶解的氧化銅粉體的流出，也可以在連通孔95設置過濾器。 The outlet 30b of the feeder 30 is located above the agitation tank 91, and the copper oxide powder supplied from the feeder 30 is put into the agitation tank 91. The agitator 85 includes a stirring blade 86 disposed inside the agitation tank 91 and a motor 87 coupled to the agitation blade 86. The motor 87 can dissolve the copper oxide powder in the plating solution by rotating the stirring blade 86. The operation of the agitator 85 is controlled by the above-described operation control unit 32. The overflow tank 92 is adjacent to the agitation tank 91. The plating solution to which the copper oxide powder is added flows into the overflow tank 92 from the agitation tank 91 through the communication hole 95. In order to prevent the outflow of the insoluble copper oxide powder, a filter may be provided in the communication hole 95.

與溢流槽92鄰接地設置有迂回流路93。鍍覆液從溢流槽92溢流而流入迂回流路93。本實施方式的迂回流路93是由複數個擋板88形成 的蛇形流動路徑。在各擋板88的端部形成有缺口88a。鄰接的擋板88的缺口88a形成於擋板88的長度方向上的不同的位置。因而，如圖11的箭頭所示，添加有氧化銅粉體的鍍覆液在迂回流路93中蛇形運動。在一實施方式中，也可以是，沒有缺口88a的複數個擋板88以相互錯開的方式配置而形成迂回流路93。 A meandering return path 93 is provided adjacent to the overflow groove 92. The plating solution overflows from the overflow tank 92 and flows into the helium return path 93. The crucible return path 93 of the present embodiment is formed by a plurality of baffles 88 Serpentine flow path. A notch 88a is formed at an end of each of the baffles 88. The notches 88a of the adjacent baffles 88 are formed at different positions in the longitudinal direction of the baffle 88. Therefore, as shown by the arrow in FIG. 11, the plating liquid to which the copper oxide powder is added is serpentinely moved in the crucible return path 93. In one embodiment, a plurality of baffles 88 having no notches 88a may be arranged to be displaced from each other to form a meandering path 93.

迂回流路93是為了確保足夠的氧化銅粉體溶解於鍍覆液的時間而設置的。較佳為鍍覆液在迂回流路93中通過的時間是10秒以上。通過設置這樣的迂回流路93，能夠使氧化銅粉體充分地溶解於鍍覆液中。 The crucible return path 93 is provided to ensure that sufficient copper oxide powder is dissolved in the plating solution. Preferably, the time during which the plating solution passes through the helium reflux path 93 is 10 seconds or longer. By providing such a meandering path 93, the copper oxide powder can be sufficiently dissolved in the plating liquid.

圖13是表示鍍覆液箱35的另一實施方式的示意圖。在本實施方式中，擋板88設置於溢流槽92內，這些擋板88以在上下方向上交替錯開的方式配置。由這些擋板88形成鍍覆液的迂回流路93。 FIG. 13 is a schematic view showing another embodiment of the plating solution tank 35. In the present embodiment, the baffle plate 88 is provided in the overflow groove 92, and these baffles 88 are arranged alternately in the vertical direction. A meandering return path 93 of the plating solution is formed by these baffles 88.

另外，圖14是表示鍍覆液箱35的又一實施方式的示意圖。在該實施方式中，配置有攪拌機85的攪拌槽91設置於鍍覆液箱35的中心。溢流槽92設置於攪拌槽91的外側，與設置於攪拌槽91的下端的連通孔95連通。迂回流路93與溢流槽92鄰接，而且，迂回流路93與鍍覆液供給路徑36連接。迂回流路93配置於攪拌槽91和溢流槽92的外側。本實施方式中的迂回流路93是呈螺旋狀延伸的螺旋流路。鍍覆液從攪拌槽91經由連通孔95流入溢流槽92，而且，從溢流槽92溢流而流入迂回流路93。在迂回流路93中流動的鍍覆液流入鍍覆液供給路徑36。若迂回流路93如此構成為螺旋狀、即圓形，則不設置擋板88就能夠使鍍覆液滯留，另外，在鍍覆液箱35不存在角部，因此，能夠防止粉體在鍍覆液的流動經常滯留的鍍覆液箱35的角部沉降，而且，能夠構成輕巧的鍍覆液箱35。 In addition, FIG. 14 is a schematic view showing still another embodiment of the plating solution tank 35. In this embodiment, the agitation tank 91 in which the agitator 85 is disposed is provided in the center of the plating solution tank 35. The overflow tank 92 is provided outside the agitation tank 91, and communicates with the communication hole 95 provided at the lower end of the agitation tank 91. The helium return path 93 is adjacent to the overflow tank 92, and the helium return path 93 is connected to the plating liquid supply path 36. The helium return path 93 is disposed outside the agitation tank 91 and the overflow tank 92. The crucible return path 93 in the present embodiment is a spiral flow path extending in a spiral shape. The plating solution flows into the overflow tank 92 from the agitation tank 91 through the communication hole 95, and overflows from the overflow tank 92 to flow into the helium return path 93. The plating liquid flowing in the crucible return path 93 flows into the plating liquid supply path 36. When the meandering return path 93 is formed in a spiral shape, that is, a circular shape, the plating liquid can be retained without providing the baffle plate 88, and the plating liquid tank 35 does not have a corner portion. Therefore, the powder can be prevented from being plated. The corner portion of the plating liquid tank 35, which is often retained by the flow of the liquid coating, is settled, and a lightweight plating liquid tank 35 can be formed.

在圖11~圖12所示的實施方式和圖13所示的實施方式中的任一個，都能夠通過增加擋板88的數量，從而延長鍍覆液在迂回流路93中通過的時間。在圖14所示的實施方式中沒有設置擋板，但通過延長迂回流路93，同樣地，能夠延長鍍覆液在迂回流路93中通過的時間。 In either of the embodiment shown in FIGS. 11 to 12 and the embodiment shown in FIG. 13, the time during which the plating liquid passes in the helium return path 93 can be lengthened by increasing the number of the baffles 88. Although the baffle is not provided in the embodiment shown in Fig. 14, by extending the meandering return path 93, the time during which the plating liquid passes through the meandering return path 93 can be extended in the same manner.

圖15是表示在室溫條件下調查擋板的數量對氧化銅粉體的溶解帶來的影響的實驗結果的圖(SEM(Scanning Electron Microscope：電子顯微鏡)圖)。具體而言，是這樣的圖：在分別在迂回流路93設置有三片擋板、兩片擋板、一片擋板、零片擋板的情況下，使氧化銅粉體溶解後的溶液通過迂回流路93，對在溶液通過後沉降於迂回流路93的底部上的氧化銅粉體進行收集，而利用放大照片進行拍攝而得到的圖。圖15表示SEM照片，倍率分別是50倍、100倍、150倍。 15 is a view showing an experimental result of an effect of investigating the influence of the number of baffles on the dissolution of copper oxide powder under room temperature conditions (SEM (Scanning Electron Microscope) diagram). Specifically, in the case where three baffles, two baffles, one baffle plate, and one plate baffle are provided on the helium return path 93, the solution in which the copper oxide powder is dissolved is passed back. The flow path 93 collects the copper oxide powder which has settled on the bottom of the crucible return path 93 after the solution has passed, and is imaged by taking an enlarged photograph. Fig. 15 shows an SEM photograph in which the magnifications are 50 times, 100 times, and 150 times, respectively.

若考慮鍍覆液供給管36中的摩擦損失、由閥、儀錶、管接頭部等導致的損失，則為了提高位於鍍覆槽2內的鍍覆液中的銅濃度，需要一定程度提高在鍍覆液箱35中流動的鍍覆液的流速。另一方面，若鍍覆液的流速過高，則氧化銅粉體也有可能不完全溶解於鍍覆液中。 In consideration of the friction loss in the plating solution supply pipe 36 and the loss caused by the valve, the meter, the pipe joint portion, and the like, in order to increase the copper concentration in the plating liquid in the plating tank 2, it is necessary to increase the plating to some extent. The flow rate of the plating solution flowing in the coating tank 35. On the other hand, if the flow rate of the plating solution is too high, the copper oxide powder may not be completely dissolved in the plating solution.

如根據圖15所示的實驗結果可知那樣，在擋板的數量設為三片的情況下，氧化銅粉體幾乎不殘留，但在擋板的數量設為零片的情況下，殘存有氧化銅粉體。即擋板的數量越多，氧化銅粉體越進行溶解。對於鍍覆液在迂回流路93中通過所需的時間，在擋板的數量是零片的情況下為大致4秒，在是一片的情況下為大致8秒，在是兩片的情況下為大致12秒，在是三片的情況下為大致16秒左右。 As can be seen from the experimental results shown in FIG. 15, when the number of baffles is three, the copper oxide powder hardly remains, but in the case where the number of baffles is set to zero, there is residual oxidation. Copper powder. That is, the more the number of baffles, the more the copper oxide powder dissolves. The time required for the plating solution to pass through the crucible return path 93 is approximately 4 seconds in the case where the number of the baffles is zero, approximately 8 seconds in the case of one piece, and in the case of two pieces. It is approximately 12 seconds, and it is approximately 16 seconds in the case of three sheets.

根據此次的實驗結果可以說，鍍覆液在迂回流路93中通過所 需的時間較佳是比相當於擋板數1.5片的至少10秒長的時間，例如：比相當於將擋板的數量設為兩片的情況的大致12秒長；更佳為比相當於將擋板的數量設為三片的情況的16秒長。 According to the results of this experiment, it can be said that the plating solution passes through the helium return path 93. The time required is preferably longer than at least 10 seconds corresponding to 1.5 sheets of the baffle plate. For example, the ratio is approximately 12 seconds longer than the case where the number of baffles is two pieces; more preferably the ratio is equivalent to The length of the baffle is set to three pieces and is 16 seconds long.

另外，在上述內容中，記載了調查擋板的數量對氧化銅粉體的溶解帶來的影響的例子，但作為促進氧化銅粉體的溶解的手段，並不限定於僅對擋板的數量進行調整。作為別的構成例，為了促進氧化銅粉體在溶液中的溶解，也能夠在鍍覆液箱35的內部、例如在攪拌槽91設置加熱器來促進氧化銅粉體的溶解。不過，若鍍覆液被過度加熱成高溫，則也會產生鍍覆液中的添加劑等共存成分分解、失去活性這樣的擔心。根據該觀點，為了添加劑不產生分解，較佳為將攪拌槽91中的鍍覆液的溫度的上限設為50度以下。在如此附加有能夠對鍍覆液進行加熱的結構的情況下，也可以是，以鍍覆液在迂回流路93中通過所需的時間為8秒以上的方式在迂回流路93設置一片擋板，或者、在鍍覆液箱35不設置擋板。透過在攪拌槽91設置加熱器，如此，僅使鍍覆液通過鍍覆液箱35，就能夠使氧化銅粉體充分溶解。 Further, in the above description, an example in which the influence of the number of the baffles on the dissolution of the copper oxide powder is investigated is described. However, the means for promoting the dissolution of the copper oxide powder is not limited to the number of the baffles alone. Make adjustments. As another configuration example, in order to promote dissolution of the copper oxide powder in the solution, a heater may be provided inside the plating solution tank 35, for example, in the stirring tank 91 to promote dissolution of the copper oxide powder. However, if the plating solution is excessively heated to a high temperature, there is a fear that the coexisting components such as additives in the plating solution decompose and lose activity. From this point of view, in order to prevent decomposition of the additive, it is preferable to set the upper limit of the temperature of the plating solution in the stirring tank 91 to 50 degrees or less. In the case where a structure capable of heating the plating liquid is added as described above, a one-stop block may be provided in the crucible return path 93 so that the plating liquid passes through the crucible return path 93 for a period of 8 seconds or longer. The plate, or the plating tank 35, is not provided with a baffle. By providing the heater in the stirring tank 91, the copper oxide powder can be sufficiently dissolved only by passing the plating liquid through the plating liquid tank 35.

接著，參照圖16說明第二實施方式的鍍覆系統。第二實施方式的鍍覆系統與第一實施方式的鍍覆系統不同的點在於四個鍍覆槽2串聯連接。更具體而言，各鍍覆槽2的外槽6和鄰接的鍍覆槽2的內槽5由第一連結管110和第二連結管112連接。在第一連結管110和第二連結管112分別安裝有用於移送鍍覆液的泵113。 Next, a plating system according to a second embodiment will be described with reference to Fig. 16 . The plating system of the second embodiment is different from the plating system of the first embodiment in that four plating tanks 2 are connected in series. More specifically, the outer tank 6 of each plating tank 2 and the inner tank 5 of the adjacent plating tank 2 are connected by the first connecting pipe 110 and the second connecting pipe 112. A pump 113 for transferring the plating liquid is attached to each of the first connecting pipe 110 and the second connecting pipe 112.

鍍覆液供給管36與四個鍍覆槽2中的一個內槽5連接，鍍覆液返回管37與四個鍍覆槽2中的另一個外槽6連接。在鍍覆液供給管36設置有 流量計38和流量調節閥39，在鍍覆液返回管37設置有流量計115和鍍覆液排出閥116。連接有鍍覆液返回管37的外槽6與對鍍覆液中的銅離子濃度進行測定的濃度測定器118連接。對與第一實施方式相同的構成要素標注相同的符號，省略其重複說明。 The plating solution supply pipe 36 is connected to one of the four plating tanks 2, and the plating liquid return pipe 37 is connected to the other of the four plating tanks 2. The plating liquid supply pipe 36 is provided with The flow meter 38 and the flow rate adjusting valve 39 are provided with a flow meter 115 and a plating liquid discharge valve 116 in the plating liquid return pipe 37. The outer tank 6 to which the plating liquid return pipe 37 is connected is connected to a concentration measuring device 118 that measures the concentration of copper ions in the plating liquid. The same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated.

第二實施方式的鍍覆系統一邊使位於鍍覆槽2的內部的鍍覆液所含有的銅離子濃度保持成實質上相同，一邊自動地測定鍍覆液中的銅離子濃度。構成為，若在需要向鍍覆液補充銅的情況下，從鍍覆裝置1將鍍覆液向鍍覆液供給裝置20移送，並且，從位於樓下室的鍍覆液供給裝置20將含有比較高的濃度的銅的鍍覆液向鍍覆裝置1供給。 The plating system of the second embodiment automatically measures the copper ion concentration in the plating solution while maintaining the copper ion concentration contained in the plating solution located inside the plating tank 2 substantially the same. When it is necessary to replenish copper to the plating solution, the plating solution is transferred from the plating device 1 to the plating solution supply device 20, and is contained in the plating solution supply device 20 located in the downstairs room. A relatively high concentration of copper plating solution is supplied to the plating apparatus 1.

接著，針對將氧化銅粉體向鍍覆液添加的控制順序，參照圖17說明第一實施方式的鍍覆系統，參照圖18說明第二實施方式的鍍覆系統。對於第一實施方式的鍍覆系統，如圖17所示，在步驟1中，若鍍覆液中的銅離子濃度低於設定值，則鍍覆控制部17將表示補充要求值的信號向動作控制部32發送。在步驟2中，動作控制部32收到信號，使電動機31動作，直到使氧化銅粉體的向鍍覆液的添加量達到補充要求值為止，送料器30將與補充要求值相對應的量的氧化銅粉體向鍍覆液箱35中的鍍覆液添加。 Next, the control procedure for adding the copper oxide powder to the plating solution will be described with reference to FIG. 17 to explain the plating system of the first embodiment with reference to FIG. In the plating system of the first embodiment, as shown in FIG. 17, in step 1, when the copper ion concentration in the plating solution is lower than the set value, the plating control unit 17 operates the signal indicating the supplementary request value. The control unit 32 transmits. In step 2, the operation control unit 32 receives a signal to operate the motor 31 until the amount of addition of the copper oxide powder to the plating solution reaches the replenishment request value, and the feeder 30 sets the amount corresponding to the replenishment request value. The copper oxide powder is added to the plating solution in the plating liquid tank 35.

在步驟3中，動作控制部32使攪拌機85啟動，對添加有氧化銅粉體的鍍覆液進行攪拌。若經過預先設定好的時間，則動作控制部32使攪拌機85的攪拌動作停止。在步驟4中，添加有氧化銅粉體的鍍覆液一邊在溢流槽92和迂回流路93中流動、氧化銅粉體一邊溶解於鍍覆液中。然後，在步驟5中，氧化銅粉體溶解後的鍍覆液經由鍍覆液供給管36向鍍覆裝置1的鍍覆槽2供給。這樣一來，在鍍覆裝置1中使用的鍍覆液中的銅離子濃度 可維持於設定值。根據本實施方式，所需的量的氧化銅粉體被自動地添加於鍍覆液，並被溶解，並且能夠向各鍍覆槽2每次各供給預定量，因此，不使鍍覆裝置1的生產率降低，就能夠管理、維持各鍍覆槽2的鍍覆液中的銅離子濃度，使各自的銅離子濃度分別成為預定的值。 In step 3, the operation control unit 32 activates the agitator 85 and agitates the plating solution to which the copper oxide powder is added. When the predetermined time has elapsed, the operation control unit 32 stops the stirring operation of the agitator 85. In the step 4, the plating solution to which the copper oxide powder is added flows in the overflow tank 92 and the helium reflux path 93, and dissolves in the plating solution while oxidizing the copper powder. Then, in step 5, the plating solution in which the copper oxide powder is dissolved is supplied to the plating tank 2 of the plating apparatus 1 via the plating liquid supply pipe 36. In this way, the copper ion concentration in the plating solution used in the plating apparatus 1 Can be maintained at the set value. According to the present embodiment, the required amount of copper oxide powder is automatically added to the plating solution and dissolved, and each plating tank 2 can be supplied with a predetermined amount each time. Therefore, the plating apparatus 1 is not caused. When the productivity is lowered, the concentration of copper ions in the plating solution of each plating tank 2 can be managed and maintained, and the respective copper ion concentrations can be set to predetermined values.

另外，在第二實施方式的鍍覆系統中，以如下方式將氧化銅粉體向鍍覆液添加。即，收容於鍍覆槽2的鍍覆液中的銅離子濃度由濃度測定器118持續地測定，銅離子濃度的測定值由鍍覆控制部17監視。如圖18所示，在步驟1中，在鍍覆槽2的鍍覆液中的銅離子濃度低於設定值的情況下，鍍覆控制部17將表示補充要求值的信號向鍍覆液供給裝置20的動作控制部32發送。在步驟2中，將從鍍覆槽2排出鍍覆液的鍍覆液排出閥116打開，將鍍覆液從鍍覆槽2向鍍覆液箱35移送。該鍍覆液排出閥116以打開規定時間的方式動作，以便供給鍍覆液箱35的最大容量以下的鍍覆液。 Further, in the plating system of the second embodiment, the copper oxide powder is added to the plating solution as follows. In other words, the concentration of copper ions in the plating solution stored in the plating tank 2 is continuously measured by the concentration measuring device 118, and the measured value of the copper ion concentration is monitored by the plating control unit 17. As shown in FIG. 18, in the case where the copper ion concentration in the plating solution of the plating tank 2 is lower than the set value, the plating control unit 17 supplies a signal indicating the supplementary request value to the plating liquid. The operation control unit 32 of the device 20 transmits. In step 2, the plating liquid discharge valve 116 that discharges the plating liquid from the plating tank 2 is opened, and the plating liquid is transferred from the plating tank 2 to the plating liquid tank 35. The plating solution discharge valve 116 is operated to open for a predetermined period of time so as to supply the plating liquid having a maximum capacity or less of the plating liquid tank 35.

在步驟3中，動作控制部32收到上述信號而使電動機31動作直到氧化銅粉體的向鍍覆液的添加量達到補充要求值為止，送料器30將與補充要求值相對應的量的氧化銅粉體向鍍覆液箱35中的鍍覆液添加。此外，步驟2和步驟3既可以同時進行，或也可以步驟3先於步驟2執行。在步驟4中，動作控制部32使攪拌機85啟動，對添加有氧化銅粉體的鍍覆液進行攪拌。當經過預先設定好的時間，動作控制部32使攪拌機85的攪拌動作停止。 In step 3, the operation control unit 32 receives the signal and operates the motor 31 until the amount of addition of the copper oxide powder to the plating solution reaches the replenishment request value, and the feeder 30 sets the amount corresponding to the replenishment request value. The copper oxide powder is added to the plating solution in the plating liquid tank 35. In addition, step 2 and step 3 may be performed simultaneously, or step 3 may be performed prior to step 2. In step 4, the operation control unit 32 activates the agitator 85 to agitate the plating solution to which the copper oxide powder is added. When the predetermined time has elapsed, the operation control unit 32 stops the stirring operation of the agitator 85.

在步驟5中，添加有氧化銅粉體的鍍覆液一邊在溢流槽92和迂回流路93中流動，氧化銅粉體一邊溶解於鍍覆液中。然後，在步驟6中，氧化銅粉體溶解後的鍍覆液經由鍍覆液供給管36向鍍覆裝置1的鍍覆槽2中 的任意一個供給。複數個鍍覆槽2由第一連結管110和第二連結管112彼此連通，驅動被設置於鍍覆槽2之間的第一連結管110和第二連結管112的泵113，從而鍍覆液遍及複數個鍍覆槽2的整體。這樣一來，在鍍覆裝置1中使用的鍍覆液中的銅離子濃度被維持於設定值。 In the step 5, the plating solution to which the copper oxide powder is added flows in the overflow tank 92 and the helium reflux path 93, and the copper oxide powder is dissolved in the plating liquid. Then, in step 6, the plating solution after the copper oxide powder is dissolved is applied to the plating tank 2 of the plating apparatus 1 via the plating liquid supply pipe 36. Any one of the supplies. The plurality of plating tanks 2 communicate with each other by the first connecting pipe 110 and the second connecting pipe 112, and drive the pump 113 of the first connecting pipe 110 and the second connecting pipe 112 provided between the plating tanks 2, thereby plating The liquid spreads over the entirety of the plurality of plating tanks 2. As a result, the copper ion concentration in the plating solution used in the plating apparatus 1 is maintained at a set value.

如圖1所示，在第一實施方式的鍍覆系統中，鍍覆液供給管36具備與複數個鍍覆槽2分別連接的複數個分支管36a，將相同的濃度的鍍覆液向這些鍍覆槽2供給。在第二實施方式的鍍覆系統中，複數個鍍覆槽2彼此連通，並且，鍍覆液供給管36與複數個鍍覆槽2中的一個連接。因而，在任一實施方式中，複數個鍍覆槽2內的鍍覆液的濃度被均勻地保持。根據本實施方式，不僅提高由鍍覆形成的銅膜的品質，能夠防止鍍覆槽2之間的鍍覆結果的偏差。 As shown in Fig. 1, in the plating system of the first embodiment, the plating solution supply pipe 36 includes a plurality of branch pipes 36a connected to the plurality of plating tanks 2, and the plating liquid of the same concentration is applied to these. The plating tank 2 is supplied. In the plating system of the second embodiment, the plurality of plating tanks 2 are in communication with each other, and the plating liquid supply pipe 36 is connected to one of the plurality of plating tanks 2. Therefore, in any of the embodiments, the concentration of the plating solution in the plurality of plating tanks 2 is uniformly maintained. According to the present embodiment, not only the quality of the copper film formed by plating but also the variation in the plating result between the plating grooves 2 can be prevented.

較佳為氧化銅粉末的平均粒徑設為10微米~200微米的範圍(是指由雷射繞射、散射法測定出的值)。而且，更佳為平均粒徑設為20微米~100微米的範圍。若平均粒徑過小，則擔心在供給粉體時氧化銅粉體向空間飛散。另外，若平均粒徑過大，則也擔心粉末難以迅速地溶解於溶液。 The average particle diameter of the copper oxide powder is preferably in the range of 10 μm to 200 μm (refer to a value measured by a laser diffraction or scattering method). Further, it is more preferable that the average particle diameter is in the range of 20 μm to 100 μm. When the average particle diameter is too small, there is a fear that the copper oxide powder scatters into the space when the powder is supplied. Further, if the average particle diameter is too large, there is a fear that the powder is difficult to dissolve in the solution quickly.

而且，作為別的方法，能夠提供一種鍍覆方法，在該鍍覆方法中，透過使用添加有金屬銅成形為顆粒狀的固形物的鍍覆液，能夠在基板形成品質更高的銅膜。若使用如此金屬銅成形為顆粒狀的固形物，使雜質的量較少的銅粉體與氧化銅粉末混合存在，因此，能夠提高鍍覆膜品質。並且，由於呈顆粒狀，因此能夠更有效地防止供給粉體時的粉體的飛散。 Further, as another method, it is possible to provide a plating method in which a copper film having a higher quality can be formed on a substrate by using a plating solution in which a solid substance formed by molding a metal copper is added. When such a solid metal is formed into a granular solid material, the copper powder having a small amount of impurities is mixed with the copper oxide powder, so that the quality of the plating film can be improved. Further, since it is in the form of particles, it is possible to more effectively prevent the scattering of the powder when the powder is supplied.

一般而言，在將鹼金屬形成為粉體的情況下，也存在起火、***的危險性的擔憂，但金屬銅粉體本身起火、***的危險等也較少，因 此，能夠將金屬銅粉體成形為顆粒狀。也能夠構成為，將這樣的金屬銅成形為顆粒狀的固形物如在圖1等中進行了說明那樣替代氧化銅粉體、或者與氧化銅粉體一起向鍍覆液箱35供給。另外，也可以使用將金屬銅和氧化銅粉體一起成形為顆粒狀的固形物。 In general, when an alkali metal is formed into a powder, there is a concern that the risk of fire or explosion may occur, but the metal copper powder itself is less likely to cause fire or explosion, and the like. Thus, the metallic copper powder can be formed into a pellet shape. The solid metal in which such a metallic copper is formed into a pellet shape may be supplied to the plating liquid tank 35 instead of the copper oxide powder as described in FIG. 1 or the like. Further, a solid matter in which metal copper and copper oxide powder are formed together into a pellet shape can also be used.

另外，若上述那樣成形為顆粒狀的固形物過硬，則可能成為鍍覆液供給裝置20的不良情況的原因，若過於柔軟，則也可設想有可能無法有效地防止粉體的飛散。因此，顆粒的硬度設為恰當的範圍為佳。 Further, if the solid matter formed into a granular shape as described above is too hard, the plating solution supply device 20 may be defective. If it is too soft, it is conceivable that the powder may not be effectively prevented from scattering. Therefore, it is preferred that the hardness of the particles be set to an appropriate range.

另外，對設為顆粒狀的固形物進行了說明，但在鍍銅處理中也能夠使用設為小粒徑的球體的銅固形物球、將固體狀的銅成形為緞帶、或細長帶狀而成的帶狀物。在該情況下，也可以使送料器30的軸帶有固形物的破碎效果。 Further, although the solid matter having a granular shape has been described, a copper solid ball having a spherical body having a small particle diameter can be used in the copper plating treatment, and the solid copper can be formed into a ribbon or an elongated ribbon. a ribbon. In this case, the shaft of the feeder 30 can also have a crushing effect of the solid matter.

在上述實施方式中說明了將銅鍍覆於基板的情況的粉體容器和鍍覆液的供給裝置，但在鍍覆於基板的金屬種類不是銅而是例如銦這樣的別的金屬的情況下，也能夠使用上述的粉體容器、鍍覆系統以及鍍覆方法。 In the above embodiment, the powder container and the plating liquid supply device in the case where copper is plated on the substrate have been described. However, in the case where the metal type plated on the substrate is not copper but another metal such as indium. The powder container, the plating system, and the plating method described above can also be used.

上述的實施方式是以具有本發明所屬的技術領域中具有通常知識者能夠實施本發明為目的而記載的。只要是本領域技術人員，當然能夠做成上述實施方式的各種變形例，本發明的技術的思想也可適用於其他實施方式。因而，本發明並不限定於所記載的實施方式，而解釋為按照由申請專利範圍定義的技術思想的最大的範圍。 The above-described embodiments are described for the purpose of enabling the present invention to be carried out by those having ordinary skill in the art to which the present invention pertains. As long as it is a person skilled in the art, various modifications of the above-described embodiments can be made, and the technical idea of the present invention can be applied to other embodiments. Therefore, the present invention is not limited to the embodiments described, but is construed as the maximum scope of the technical idea defined by the scope of the claims.

1‧‧‧鍍覆裝置 1‧‧‧ plating device

2‧‧‧鍍覆槽 2‧‧‧ plating trough

5‧‧‧內槽 5‧‧‧ Inside slot

6‧‧‧外槽 6‧‧‧ outer trough

8‧‧‧不溶解陽極 8‧‧‧Insoluble anode

9‧‧‧陽極保持件 9‧‧‧Anode holder

11‧‧‧基板保持件 11‧‧‧Substrate holder

15‧‧‧鍍覆電源 15‧‧‧ plating power supply

17‧‧‧鍍覆控制部 17‧‧‧Plating Control Department

18a、18b‧‧‧濃度測定器 18a, 18b‧‧‧ concentration tester

20‧‧‧鍍覆液供給裝置 20‧‧‧ plating solution supply device

21‧‧‧粉體容器 21‧‧‧ powder container

24‧‧‧密閉腔室 24‧‧‧Closed chamber

27‧‧‧料斗 27‧‧‧ hopper

30‧‧‧送料器 30‧‧‧Feeder

31‧‧‧電動機 31‧‧‧Electric motor

32‧‧‧動作控制部 32‧‧‧Action Control Department

35‧‧‧鍍覆液箱 35‧‧‧ plating tank

36‧‧‧鍍覆液供給管 36‧‧‧ plating solution supply pipe

36a、36b‧‧‧分支管 36a, 36b‧‧‧ branch pipe

37‧‧‧鍍覆液返回管 37‧‧‧ plating liquid return pipe

37a‧‧‧排出管 37a‧‧‧Draining tube

38‧‧‧流量計 38‧‧‧ Flowmeter

39‧‧‧流量調節閥 39‧‧‧Flow regulating valve

40‧‧‧泵 40‧‧‧ pump

41‧‧‧過濾器 41‧‧‧Filter

42‧‧‧純水供給管線 42‧‧‧pure water supply pipeline

43‧‧‧開閉閥 43‧‧‧Opening and closing valve

44‧‧‧流量計 44‧‧‧ flowmeter

47‧‧‧流量調節閥 47‧‧‧Flow regulating valve

DIW‧‧‧純水 DIW‧‧‧ pure water

W‧‧‧基板 W‧‧‧Substrate

Claims (26)

一種用以供給鍍覆液至鍍覆槽之裝置，所述鍍覆液中溶解有至少含有鍍覆所使用的金屬的粉體，該裝置的特徵在於，具備：料斗，該料斗具有投入口，該投入口能夠與***述粉體的粉體容器的粉體導管連結；送料器，該送料器與所述料斗的下部開口連通；電動機，該電動機與所述送料器連結；以及鍍覆液箱，該鍍覆液箱與所述送料器的出口連結，使所述粉體溶解於所述鍍覆液。 An apparatus for supplying a plating solution to a plating tank, wherein the plating solution is dissolved with a powder containing at least a metal used for plating, the apparatus comprising: a hopper having an input port; The input port can be coupled to a powder conduit of a powder container that stores the powder; a feeder that communicates with a lower opening of the hopper; an electric motor that is coupled to the feeder; and a plating solution a tank, the plating tank is coupled to an outlet of the feeder to dissolve the powder in the plating solution. 根據申請專利範圍第1項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，該裝置還具備：重量測定器，該重量測定器對所述料斗的重量和所述送料器的重量進行測定；以及動作控制部，該動作控制部基於所述重量的測定值的變化，對所述電動機的動作進行控制。 The apparatus for supplying a plating solution to a plating tank according to the first aspect of the patent application, wherein the apparatus further comprises: a weight measuring device, the weight of the weight measuring unit and the feeder The weight is measured; and the operation control unit controls the operation of the motor based on a change in the measured value of the weight. 根據申請專利範圍第2項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，所述動作控制部根據所述重量的測定值的變化，對所述粉體向所述鍍覆液的添加量進行推算，使所述電動機動作直到所述添加量達到目標值為止。 The apparatus for supplying a plating liquid to a plating tank according to the second aspect of the invention, wherein the operation control unit applies the plating to the powder according to a change in a measured value of the weight. The amount of liquid added is estimated, and the motor is operated until the added amount reaches the target value. 根據申請專利範圍第1至3項中任一項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，所述料斗的投入口具有連接密封件，該連接密封件的口徑隨著距所述料斗的投入口的頂端的距離變大而逐漸變小。 The apparatus for supplying a plating solution to a plating tank according to any one of claims 1 to 3, wherein the inlet of the hopper has a connection seal, and the diameter of the connection seal is The distance from the tip end of the inlet of the hopper becomes larger and becomes smaller. 根據申請專利範圍第4項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，所述連接密封件由彈性材料構成。 A device for supplying a plating solution to a plating tank according to the fourth aspect of the invention, wherein the connection seal is made of an elastic material. 根據申請專利範圍第1項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，該裝置還具備密閉腔室，在該密閉腔室之內部配置有所述料斗的投入口，所述密閉腔室具備：門，所述粉體容器能夠經由該門搬入所述密閉腔室的內部；以及手套式構件，該手套式構件構成所述密閉腔室的壁的一部分。 The apparatus for supplying a plating solution to a plating tank according to the first aspect of the invention, wherein the apparatus further includes a sealed chamber, and an input port of the hopper is disposed inside the sealed chamber. The sealed chamber includes a door through which the powder container can be carried into the sealed chamber, and a glove member that forms a part of a wall of the sealed chamber. 根據申請專利範圍第6項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，所述密閉腔室具備用於使其內部空間與負壓源連通的排氣口。 The apparatus for supplying a plating solution to a plating tank according to the sixth aspect of the invention, wherein the sealed chamber is provided with an exhaust port for communicating an internal space thereof with a negative pressure source. 根據申請專利範圍第6項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，在所述密閉腔室內配置有使所述粉體容器振動的振動裝置。 The apparatus for supplying a plating liquid to a plating tank according to the sixth aspect of the invention, wherein a vibration device for vibrating the powder container is disposed in the sealed chamber. 根據申請專利範圍第6項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，在所述密閉腔室內配置有保持所述粉體容器的真空夾具。 The apparatus for supplying a plating liquid to a plating tank according to the sixth aspect of the invention, wherein a vacuum chuck for holding the powder container is disposed in the sealed chamber. 根據申請專利範圍第1項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，所述鍍覆液箱具備對所述鍍覆液進行攪拌的攪拌機。 The apparatus for supplying a plating liquid to a plating tank according to the first aspect of the invention, wherein the plating liquid tank is provided with a stirrer for stirring the plating liquid. 根據申請專利範圍第10項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，所述鍍覆液箱具備：攪拌槽，該攪拌槽配置有所述攪拌機；以及溢流槽，該溢流槽與設置於該攪拌槽的下部的連通孔連接。 The apparatus for supplying a plating liquid to a plating tank according to claim 10, wherein the plating liquid tank includes: a stirring tank, the stirring tank is provided with the agitating machine; and an overflow tank, The overflow tank is connected to a communication hole provided in a lower portion of the stirring tank. 根據申請專利範圍第11項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，所述鍍覆液箱還具備與所述溢流槽鄰接的迂回流路。 The apparatus for supplying a plating liquid to a plating tank according to claim 11, wherein the plating liquid tank further includes a weir return path adjacent to the overflow tank. 根據申請專利範圍第11項所述的用以供給鍍覆液至鍍覆槽之裝置，其 中，所述鍍覆液箱還具備配置於所述溢流槽內的複數個擋板，所述複數個擋板相互錯開地排列。 a device for supplying a plating solution to a plating tank according to claim 11 of the patent application scope, The plating liquid tank further includes a plurality of baffles disposed in the overflow tank, and the plurality of baffles are arranged in a staggered manner. 根據申請專利範圍第1至13項中任一項所述的用以供給鍍覆液至鍍覆槽之裝置，其中，該裝置還具備：包圍罩，該包圍罩包圍所述送料器和所述鍍覆液箱之間的連接部；以及不活潑氣體供給管線，該不活潑氣體供給管線與所述包圍罩的內部連通。 The apparatus for supplying a plating solution to a plating tank according to any one of claims 1 to 13, wherein the apparatus further comprises: an enclosure cover surrounding the feeder and the a connection portion between the plating liquid tanks; and an inert gas supply line that communicates with the inside of the enclosure cover. 一種鍍覆系統，其特徵在於，具備：複數個鍍覆槽，該複數個鍍覆槽用於對基板進行鍍覆；申請專利範圍第1至14項中任一項所述的用以供給鍍覆液至鍍覆槽之裝置；以及鍍覆液供給管，該鍍覆液供給管從所述用以供給鍍覆液至鍍覆槽的裝置向所述複數個鍍覆槽延伸。 A plating system, comprising: a plurality of plating grooves for plating a substrate; and the plating plate according to any one of claims 1 to 14 And a plating liquid supply pipe extending from the means for supplying the plating liquid to the plating tank to the plurality of plating grooves. 根據申請專利範圍第15項所述的鍍覆系統，其中，該鍍覆系統還具備：從所述複數個鍍覆槽向所述用以供給鍍覆液至鍍覆槽的裝置延伸的鍍覆液返回管。 The plating system according to claim 15, wherein the plating system further comprises: plating from the plurality of plating grooves to the device for supplying the plating liquid to the plating tank Liquid return tube. 一種向鍍覆液供給粉體之方法，所述粉體至少含有鍍覆所使用的金屬，該方法的特徵在於，將***述粉體的粉體容器的粉體導管與料斗的投入口連結，從所述粉體容器向所述料斗供給所述粉體，一邊對貯存有所述粉體的所述料斗的重量和與該料斗的下部開口 連通的送料器的重量進行測定，一邊使所述送料器動作，基於所述重量的測定值的變化，利用所述送料器將所述粉體向鍍覆液添加。 A method of supplying a powder to a plating solution, wherein the powder contains at least a metal used for plating, and the method is characterized in that a powder conduit of a powder container in which the powder is accommodated is connected to an inlet of a hopper Supplying the powder from the powder container to the hopper, while the weight of the hopper storing the powder and the lower opening of the hopper The weight of the connected feeder is measured, and while the feeder is operated, the powder is added to the plating solution by the feeder based on the change in the measured value of the weight. 根據申請專利範圍第17項所述的向鍍覆液供給粉體之方法，其中，該方法還包括：對添加有所述粉體的所述鍍覆液進行攪拌的工序。 A method of supplying a powder to a plating solution according to claim 17, wherein the method further comprises a step of stirring the plating solution to which the powder is added. 根據申請專利範圍第17或18項所述的向鍍覆液供給粉體之方法，其中，該方法還包括如下工序：根據所述重量的測定值的變化，對所述粉體向所述鍍覆液的添加量進行推算，使所述送料器動作直到所述添加量達到目標值為止。 The method of supplying a powder to a plating solution according to claim 17 or 18, wherein the method further comprises the step of: plating the powder according to a change in the measured value of the weight The amount of the liquid coating added is estimated, and the feeder is operated until the added amount reaches the target value. 一種粉體容器，用於收容至少含有鍍覆所使用的金屬的粉體，該粉體容器的特徵在於，具備：容器主體，該容器主體能夠在其內部***述粉體；粉體導管，該粉體導管與所述容器主體連接；以及閥，該閥安裝於所述粉體導管。 A powder container for containing a powder containing at least a metal used for plating, the powder container comprising: a container body capable of accommodating the powder therein; a powder conduit; The powder conduit is coupled to the container body; and a valve is mounted to the powder conduit. 根據申請專利範圍第20項所述的粉體容器，其中，所述粉體導管的頂端具有圓錐台形狀。 The powder container according to claim 20, wherein the tip end of the powder conduit has a truncated cone shape. 一種對基板進行鍍覆之方法，其特徵在於，具有如下工序：將鍍覆液從鍍覆槽向鍍覆液箱移送的工序；基於鍍覆槽內的鍍覆液中的金屬離子的濃度，對至少含有鍍覆所使用的金屬的粉體應該向收容於所述鍍覆液箱的鍍覆液添加的量進行推算的工序； 將所述至少含有鍍覆所使用的金屬的粉體向收容於所述鍍覆液箱的鍍覆液供給的工序；使所述粉體溶解於所述鍍覆液箱所收容的鍍覆液的工序；將所述粉體溶解後的所述鍍覆液從所述鍍覆液箱向所述鍍覆槽供給的工序；使基板與收容於所述鍍覆槽的鍍覆液接觸的工序；以及在收容於所述鍍覆槽內的鍍覆液中產生電化學反應，以在鍍覆液中使所述金屬析出於基板表面上的工序。 A method of plating a substrate, comprising the steps of: transferring a plating solution from a plating tank to a plating solution tank; and based on a concentration of metal ions in the plating solution in the plating tank, a step of estimating the amount of the powder containing at least the metal used for the plating to be added to the plating solution contained in the plating solution tank; a step of supplying the powder containing at least the metal used for plating to the plating solution contained in the plating solution tank; and dissolving the powder in the plating solution contained in the plating solution tank a step of supplying the plating solution in which the powder is dissolved from the plating solution tank to the plating tank, and a step of bringing the substrate into contact with a plating solution accommodated in the plating tank And a step of generating an electrochemical reaction in the plating solution contained in the plating tank to deposit the metal on the surface of the substrate in the plating solution. 根據申請專利範圍第22項所述的對基板進行鍍覆之方法，其中，所述鍍覆槽由複數個鍍覆槽構成，在將收容於所述鍍覆液箱的鍍覆液向該複數個鍍覆槽供給時，一邊對鍍覆液的流量進行控制，一邊向該複數個鍍覆槽分別供給鍍覆液。 The method of plating a substrate according to claim 22, wherein the plating tank is composed of a plurality of plating tanks, and the plating liquid contained in the plating liquid tank is applied to the plurality When the plating tank is supplied, the plating liquid is supplied to the plurality of plating tanks while controlling the flow rate of the plating liquid. 根據申請專利範圍第22項所述的對基板進行鍍覆之方法，其中，所述鍍覆槽由複數個鍍覆槽構成，對該複數個鍍覆槽內的鍍覆液中的金屬離子始終進行監視，並且，在所述金屬離子的濃度低於預定值的情況下，使該複數個鍍覆槽內的鍍覆液從鍍覆槽向鍍覆液箱移送，並且，將鍍覆液從所述鍍覆液箱向所述複數個鍍覆槽中的任意一個供給。 The method of plating a substrate according to claim 22, wherein the plating tank is composed of a plurality of plating tanks, and metal ions in the plating liquid in the plurality of plating tanks are always Monitoring is performed, and when the concentration of the metal ions is lower than a predetermined value, the plating liquid in the plurality of plating tanks is transferred from the plating tank to the plating liquid tank, and the plating liquid is removed from the plating tank The plating solution tank is supplied to any one of the plurality of plating tanks. 一種記憶媒體，係非暫態性的電腦可讀取的記憶媒體，其存放有用於執行對基板進行電解鍍覆之方法的電腦程式，該記憶媒體的特徵在於，所述對基板進行電解鍍覆的方法具有如下工序：將鍍覆液從鍍覆槽向鍍覆液箱移送的工序； 將至少含有鍍覆所使用的金屬的粉體向收容於所述鍍覆液箱的鍍覆液供給的工序；使所述粉體溶解於所述鍍覆液箱所收容的鍍覆液的工序；將所述粉體溶解後的所述鍍覆液從所述鍍覆液箱向所述鍍覆槽供給的工序；使基板與收容於所述鍍覆槽的鍍覆液接觸的工序；以及在收容於所述鍍覆槽內的鍍覆液中產生電化學反應，以在鍍覆液中使所述金屬析出於基板表面上的工序。 A memory medium is a non-transitory computer readable memory medium storing a computer program for performing a method of electrolytically plating a substrate, the memory medium being characterized in that the substrate is electrolytically plated The method has the following steps: a step of transferring the plating solution from the plating tank to the plating tank; a step of supplying a powder containing at least a metal used for plating to a plating solution contained in the plating solution tank, and a step of dissolving the powder in a plating solution contained in the plating solution tank a step of supplying the plating solution in which the powder is dissolved from the plating solution tank to the plating tank, and a step of bringing the substrate into contact with a plating solution accommodated in the plating tank; An electrochemical reaction occurs in the plating solution accommodated in the plating tank to deposit the metal on the surface of the substrate in the plating solution. 一種記憶媒體，係非暫態性的電腦可讀取的記憶媒體，存放有用於執行對基板進行電解鍍覆之方法的電腦程式，該記憶媒體的特徵在於，所述對基板進行電解鍍覆之方法具備如下工序：對鍍覆槽內的鍍覆液所含有的金屬離子的濃度是否低於設定值進行監視的工序；在所述金屬離子的濃度低於預定值的情況下，對至少含有金屬的粉體應該向鍍覆液添加的量進行推算的工序；將鍍覆液從所述鍍覆槽向鍍覆液箱移送的工序；將所述粉體向收容於所述鍍覆液箱的鍍覆液供給直到達到推算出的所述量為止的工序；使所述粉體溶解於所述鍍覆液箱所收容的鍍覆液的工序；將所述粉體溶解後的所述鍍覆液從所述鍍覆液箱向所述鍍覆槽供給的工序；使基板與收容於所述鍍覆槽的鍍覆液接觸的工序； 在收容於所述鍍覆槽內的鍍覆液中產生電化學反應，以在鍍覆液中使所述金屬析出於基板表面上的工序。 A memory medium, which is a non-transitory computer readable memory medium, storing a computer program for performing a method of electrolytically plating a substrate, the memory medium being characterized in that the substrate is electrolytically plated The method includes a step of monitoring whether or not the concentration of the metal ions contained in the plating solution in the plating tank is lower than a set value, and when the concentration of the metal ions is lower than a predetermined value, at least containing the metal a step of estimating the amount of the powder to be added to the plating solution; a step of transferring the plating solution from the plating tank to the plating solution tank; and storing the powder in the plating tank a step of supplying the plating solution until the calculated amount is reached; a step of dissolving the powder in the plating solution contained in the plating solution tank; and plating the powder after dissolving the powder a step of supplying the liquid from the plating solution tank to the plating tank; and a step of bringing the substrate into contact with the plating solution contained in the plating tank; An electrochemical reaction occurs in the plating solution accommodated in the plating tank to deposit the metal on the surface of the substrate in the plating solution.
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