TW201738903A - Conductive substrate - Google Patents

Conductive substrate Download PDF

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TW201738903A
TW201738903A TW106110668A TW106110668A TW201738903A TW 201738903 A TW201738903 A TW 201738903A TW 106110668 A TW106110668 A TW 106110668A TW 106110668 A TW106110668 A TW 106110668A TW 201738903 A TW201738903 A TW 201738903A
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layer
metal
wet
metal layer
plating
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TW106110668A
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TWI795356B (en
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西山芳英
須田貴広
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住友金屬礦山股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Laminated Bodies (AREA)
  • Inorganic Chemistry (AREA)
  • Non-Insulated Conductors (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

Provided is a conductive substrate comprising a transparent base material, a metal layer disposed on at least one surface of the transparent base material, and a wet-type plating blackened layer disposed on the metal layer, wherein the surface roughness Ra ([mu]m) of a surface of the metal layer opposing the wet-type plating blackened layer is 0.35 times or more the thickness ([mu]m) of the wet-type plating blackened layer.

Description

導電性基板 Conductive substrate

本發明涉及導電性基板。 The present invention relates to a conductive substrate.

靜電容量式觸屏藉由對接近面板表面的物體所引起的靜電容量的變化進行檢測，可將面板表面上的接近物體的位置資訊變換為電信號。由於靜電容量式觸屏中所使用的導電性基板設置在顯示器表面上，故要求導電性基板的導電層的材料的反射率較低且難以被視認。 The electrostatic capacitance type touch screen can detect the positional information of the approaching object on the surface of the panel into an electrical signal by detecting a change in electrostatic capacitance caused by an object approaching the surface of the panel. Since the conductive substrate used in the electrostatic capacity type touch panel is provided on the surface of the display, the material of the conductive layer of the conductive substrate is required to have a low reflectance and is difficult to be visually recognized.

因此，作為靜電容量式觸屏中所使用的導電性基板的導電層的材料，使用了反射率較低且難以被視認的材料，並在透明基板或透明薄膜上還形成了配線。 Therefore, as a material of the conductive layer of the conductive substrate used in the electrostatic capacitance type touch panel, a material having a low reflectance and being difficult to be visually recognized is used, and wiring is also formed on the transparent substrate or the transparent film.

例如，專利文獻1中公開了一種透明導電性薄膜，其包括高分子薄膜及在其上採用氣相成膜法所設置的由金屬氧化物組成的透明導電膜，其特徵在於，由第一金屬氧化物組成的透明導電膜及在其上所設置的由第二金屬氧化物組成的透明導電膜構成了上述由金屬氧化物組成的透明導電膜，並且在與由第一金屬氧化物組成的透明導電膜的成膜條件不同的條件下形成了上述由第二金屬氧化物組成的透明導電膜。此外，還公開了由金屬氧化物組成的透明導電膜為氧化銦-氧化錫(ITO)膜。 For example, Patent Document 1 discloses a transparent conductive film comprising a polymer film and a transparent conductive film composed of a metal oxide provided thereon by a vapor phase film formation method, characterized in that the first metal is A transparent conductive film composed of an oxide and a transparent conductive film composed of a second metal oxide disposed thereon constitute the above-mentioned transparent conductive film composed of a metal oxide, and are transparent with the first metal oxide The above transparent conductive film composed of the second metal oxide is formed under conditions in which the film formation conditions of the conductive film are different. Further, it is also disclosed that the transparent conductive film composed of a metal oxide is an indium oxide-tin oxide (ITO) film.

另外，近年來，具備觸屏的顯示器正趨於大畫面化和高性能化，與此相應地，研討了作為導電層的材料使用銅等金屬以取代電阻較高 的ITO的技術(例如參照專利文獻2、3)。然而，由於金屬具有金屬光澤，故存在反射會導致顯示器的視認性下降的問題。為此，還研討了除了作為導電層的銅等金屬層之外還具有由黑色材料構成的黑化層的導電性基板。 In addition, in recent years, displays with touch panels are becoming larger screens and higher in performance, and accordingly, materials such as copper are used as materials for the conductive layers to replace high resistance. The technique of ITO (for example, refer to Patent Documents 2 and 3). However, since the metal has a metallic luster, there is a problem that reflection causes a decrease in visibility of the display. For this reason, a conductive substrate having a blackened layer made of a black material in addition to a metal layer such as copper as a conductive layer has been studied.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

〔專利文獻1〕日本國特開2003-151358號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-151358

〔專利文獻2〕日本國特開2011-018194號公報 [Patent Document 2] Japanese Special Publication No. 2011-018194

〔專利文獻3〕日本國特開2013-069261號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2013-069261

此外，就具有金屬層和黑化層的導電性基板而言，為了使其成為具有預期配線圖案的導電性基板，通常採用一種在透明基材的至少一個面上形成金屬層和黑化層之後，再對金屬層和黑化層進行蝕刻的方法。 Further, in the case of a conductive substrate having a metal layer and a blackened layer, in order to make it a conductive substrate having a desired wiring pattern, a metal layer and a blackening layer are formed on at least one surface of the transparent substrate. And a method of etching the metal layer and the blackening layer.

然而，對金屬層和黑化層進行蝕刻時，導電性基板內存在例如一部分會比其他部分先溶解等進而導致難以均勻地進行蝕刻的情況。如此，若不能在導電性基板內均勻地進行蝕刻，則存在所形成的配線圖案的線寬會產生偏差的情況和問題。 However, when the metal layer and the blackened layer are etched, for example, a part of the conductive substrate may be dissolved or the like before being partially dissolved, which may make it difficult to perform etching uniformly. As described above, if the etching cannot be performed uniformly in the conductive substrate, there is a problem that the line width of the formed wiring pattern varies.

鑑於上述先前技術的問題，於本發明的一方面，以提供一種蝕刻均勻性較優的導電性基板為目的。 In view of the above problems of the prior art, in an aspect of the present invention, an object of providing a conductive substrate having excellent etching uniformity is provided.

為了解決上述課題，於本發明的一方面，提供一種導電性基板，其具有： 透明基材；金屬層，配置在該透明基材的至少一表面上；及濕式鍍黑化層，配置在該金屬層上，其中，該金屬層的與該濕式鍍黑化層相對的表面的表面粗糙度Ra(μm)為該濕式鍍黑化層的厚度(μm)的0.35倍以上。 In order to solve the above problems, in an aspect of the invention, a conductive substrate is provided which has: a transparent substrate; a metal layer disposed on at least one surface of the transparent substrate; and a wet black-plated layer disposed on the metal layer, wherein the metal layer is opposite to the wet black-plated layer The surface roughness Ra (μm) of the surface is 0.35 times or more the thickness (μm) of the wet blackened layer.

根據本發明的一方面，可提供一種蝕刻均勻性較優的導電性基板。 According to an aspect of the present invention, a conductive substrate having excellent etching uniformity can be provided.

10A、10B、20A、20B、30‧‧‧導電性基板 10A, 10B, 20A, 20B, 30‧‧‧ conductive substrate

11、111、112‧‧‧透明基材 11, 111, 112‧‧‧ transparent substrate

12、121、122‧‧‧金屬層 12, 121, 122‧‧‧ metal layers

13、131、132、321、322‧‧‧濕式鍍黑化層 13,131,132,321,322‧‧‧wet blackening layer

〔第1A圖〕本發明實施方式的導電性基板的斷面圖。 [Fig. 1A] A cross-sectional view of a conductive substrate according to an embodiment of the present invention.

〔第1B圖〕本發明實施方式的導電性基板的斷面圖。 [Fig. 1B] A cross-sectional view of a conductive substrate according to an embodiment of the present invention.

〔第2A圖〕本發明實施方式的導電性基板的斷面圖。 [Fig. 2A] A cross-sectional view of a conductive substrate according to an embodiment of the present invention.

〔第2B圖〕本發明實施方式的導電性基板的斷面圖。 [Fig. 2B] A cross-sectional view of a conductive substrate according to an embodiment of the present invention.

〔第3圖〕本發明實施方式的具有網狀配線的導電性基板的俯視圖。 [Fig. 3] A plan view of a conductive substrate having a mesh wiring according to an embodiment of the present invention.

〔第4A圖〕沿圖3的A-A’線的斷面圖。 [Fig. 4A] A cross-sectional view taken along line A-A' of Fig. 3.

〔第4B圖〕沿圖3的A-A’線的斷面圖。 [Fig. 4B] A cross-sectional view taken along line A-A' of Fig. 3.

以下對本發明的導電性基板及導電性基板的製造方法的一實施方式進行說明。 Hereinafter, an embodiment of the conductive substrate and the method for producing the conductive substrate of the present invention will be described.

(導電性基板) (conductive substrate)

本實施方式的導電性基板可具有：透明基材；配置在透明基材的至少 一表面上的金屬層；及配置在金屬層上的濕式鍍黑化層。此外，金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra(μm)可為濕式鍍黑化層的厚度(μm)的0.35倍以上。 The conductive substrate of the present embodiment may have: a transparent substrate; and at least a transparent substrate a metal layer on a surface; and a wet blackened layer disposed on the metal layer. Further, the surface roughness Ra (μm) of the surface of the metal layer opposite to the wet blackened layer may be 0.35 times or more the thickness (μm) of the wet blackened layer.

需要說明的是，本實施方式的導電性基板是指包括：對金屬層等進行圖案化之前的在透明基材的表面上具有金屬層和黑化層的基板；及對金屬層等進行圖案化以形成了配線形狀的基板、即、配線基板。就對金屬層和黑化層進行了圖案化之後的導電性基板而言，由於透明基材包括未被金屬層等覆蓋的區域，故可使光透過，為透明導電性基板。 In addition, the conductive substrate of the present embodiment includes a substrate having a metal layer and a blackened layer on the surface of the transparent substrate before patterning the metal layer or the like; and patterning the metal layer or the like A substrate in which a wiring shape is formed, that is, a wiring substrate. In the conductive substrate in which the metal layer and the blackened layer are patterned, since the transparent substrate includes a region that is not covered with a metal layer or the like, light can be transmitted through the transparent conductive substrate.

這裡，首先在下面對本實施方式的導電性基板中所包含的各部件進行說明。 Here, first, each member included in the conductive substrate of the present embodiment will be described below.

作為透明基材，對其並無特別限定，可較佳使用能使可視光透過的絕緣體薄膜或玻璃基板等。 The transparent substrate is not particularly limited, and an insulator film, a glass substrate or the like which can transmit visible light can be preferably used.

作為能使可視光透過的絕緣體薄膜，例如，較佳可使用從聚醯胺系薄膜、聚对苯二甲酸乙二醇酯系薄膜(PET)、聚萘二甲酸乙二醇酯(PEN)系薄膜、環烯系薄膜、聚醯亞胺(PI)系薄膜、聚碳酸酯(PC)系薄膜等中所選擇的1種以上。特別地，作為能使可視光透過的絕緣體薄膜的材料，優選可使用從PET(聚對苯二甲酸乙二醇酯)、COP(環烯聚合物)、PEN(聚萘二甲酸乙二醇酯)、聚醯胺、聚醯亞胺、聚碳酸酯等中所選擇的1種以上。 As the insulator film that allows visible light to pass through, for example, a polyimide film, a polyethylene terephthalate film (PET), or a polyethylene naphthalate (PEN) system can be preferably used. One or more selected from the group consisting of a film, a cycloolefin film, a polyimide film (PI) film, and a polycarbonate (PC) film. In particular, as a material of the insulator film that allows visible light to pass through, it is preferable to use PET (polyethylene terephthalate), COP (cycloolefin polymer), PEN (polyethylene naphthalate). One or more selected from the group consisting of polyamine, polyimine, and polycarbonate.

對透明基材的厚度並無特別限定，可根據作為導電性基板使用時所要求的強度、靜電容量或光透過率等進行任意選擇。作為透明基材的厚度，例如可為10μm以上且200μm以下。尤其是在用於觸屏的用途的 情況下，透明基材的厚度較佳為20μm以上且120μm以下，優選為20μm以上且100μm以下。在用於觸屏的用途的情況下，例如，尤其是在要求顯示器的整體厚度較薄的用途中，透明基材的厚度較佳為20μm以上且50μm以下。 The thickness of the transparent substrate is not particularly limited, and can be arbitrarily selected depending on the strength, electrostatic capacity, light transmittance, and the like required when used as a conductive substrate. The thickness of the transparent substrate may be, for example, 10 μm or more and 200 μm or less. Especially for the use of touch screens In the case, the thickness of the transparent substrate is preferably 20 μm or more and 120 μm or less, and preferably 20 μm or more and 100 μm or less. In the case of use for a touch panel, for example, particularly in applications where the overall thickness of the display is required to be thin, the thickness of the transparent substrate is preferably 20 μm or more and 50 μm or less.

透明基材的全光線透過率較高為佳，例如，全光線透過率較佳為30%以上，優選為60%以上。藉由使透明基材的全光線透過率位於上述範圍內，例如在用於觸屏的用途的情況下，可充分確保顯示器的視認性。 The transparent substrate preferably has a high total light transmittance. For example, the total light transmittance is preferably 30% or more, and preferably 60% or more. When the total light transmittance of the transparent substrate is within the above range, for example, in the case of use for a touch panel, the visibility of the display can be sufficiently ensured.

需要說明的是，可藉由JIS K 7361-1中所規定的方法對透明基材的全光線透過率進行評價。 It should be noted that the total light transmittance of the transparent substrate can be evaluated by the method specified in JIS K 7361-1.

接著，對金屬層進行說明。 Next, the metal layer will be described.

對構成金屬層的材料並無特別限定，可選擇具有滿足其用途的導電率的材料，然而，從電氣特性較優且容易進行蝕刻處理的觀點來看，作為構成金屬層的材料，較佳使用銅。即，金屬層較佳含有銅。 The material constituting the metal layer is not particularly limited, and a material having a conductivity satisfying the use thereof may be selected. However, from the viewpoint of excellent electrical characteristics and easy etching treatment, it is preferably used as a material constituting the metal layer. copper. That is, the metal layer preferably contains copper.

在金屬層包括銅的情況下，構成金屬層的材料較佳為例如Cu與從Ni、Mo、Ta、Ti、V、Cr、Fe、Mn、Co及W中所選擇的至少1種以上的金屬的銅合金或者包括銅和從上述金屬中所選擇的1種以上的金屬的材料。此外，金屬層也可為由銅構成的銅層。 In the case where the metal layer includes copper, the material constituting the metal layer is preferably, for example, Cu and at least one metal selected from the group consisting of Ni, Mo, Ta, Ti, V, Cr, Fe, Mn, Co, and W. A copper alloy or a material including copper and one or more metals selected from the above metals. Further, the metal layer may also be a copper layer composed of copper.

對形成金屬層的方法並無特別限定，然而，為了不降低光的透過率，較佳為以在其他部件和金屬層之間不配置接著劑的方式來形成金屬層。即，金屬層較佳為直接形成在其他部件的上表面。需要說明的是，金屬層可形成在透明基材或密著層的上表面。為此，金屬層較佳為直接形成在透明基材或密著層的上表面。 The method of forming the metal layer is not particularly limited. However, in order not to lower the transmittance of light, it is preferable to form the metal layer so that no adhesive is disposed between the other member and the metal layer. That is, the metal layer is preferably formed directly on the upper surface of the other member. It should be noted that the metal layer may be formed on the upper surface of the transparent substrate or the adhesion layer. To this end, the metal layer is preferably formed directly on the upper surface of the transparent substrate or the adhesion layer.

為了在其他部件的上表面直接形成金屬層，金屬層較佳具有採用乾式鍍法而成膜的金屬薄膜層。作為乾式鍍法，對其並無特別限定，例如，可採用蒸鍍法、濺射法、離子鍍法等。尤其從可容易地進行膜厚控制的觀點來看，較佳使用濺射法。 In order to form a metal layer directly on the upper surface of other members, the metal layer preferably has a metal thin film layer formed by dry plating. The dry plating method is not particularly limited, and for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. In particular, from the viewpoint of easily controlling the film thickness, a sputtering method is preferably used.

此外，在使金屬層較厚的情況下，還可使用乾式鍍法和濕式鍍法。具體而言，例如，可在透明基材上採用乾式鍍法形成金屬薄膜層，之後將該金屬薄膜層作為供電層來使用，並採用作為濕式鍍法的一種的電解鍍來形成金屬鍍層。 Further, in the case where the metal layer is made thick, dry plating and wet plating can also be used. Specifically, for example, a metal thin film layer can be formed by dry plating on a transparent substrate, and then the metal thin film layer can be used as a power supply layer, and a metal plating layer can be formed by electrolytic plating as one of wet plating methods.

需要說明的是，在如上所述僅採用乾式鍍法對金屬層進行成膜的情況下，金屬層可由金屬薄膜層構成。此外，在組合使用乾式鍍法和濕式鍍法來形成金屬層的情況下，金屬層可由金屬薄膜層和金屬鍍層構成。即，金屬層還可具有金屬鍍層。 In the case where the metal layer is formed by only the dry plating method as described above, the metal layer may be composed of a metal thin film layer. Further, in the case where a dry plating method and a wet plating method are used in combination to form a metal layer, the metal layer may be composed of a metal thin film layer and a metal plating layer. That is, the metal layer may also have a metal plating layer.

如上所述，可僅採用乾式鍍法或組合使用乾式鍍法和濕式鍍法來形成金屬層，據此可不藉由接著劑而直接在透明基材或密著層上形成金屬層。 As described above, the metal layer can be formed only by dry plating or a combination of dry plating and wet plating, whereby the metal layer can be formed directly on the transparent substrate or the adhesion layer without using an adhesive.

就本實施方式的導電性基板而言，金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra較佳為濕式鍍黑化層的厚度的0.35倍以上。此外，作為使金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra為預期值的方法，如後所述，例如可列舉出對所形成的金屬層進行表面處理的方法、對金屬薄膜層的濺射條件進行選擇的方法、對金屬鍍層成膜時的條件進行選擇的方法等。需要說明的是，作為對金屬鍍層成膜時的條件進行選擇的方法，例如可列舉出使用了在對金屬鍍層進行成膜的中途使供給至電極的 電流的方向周期反轉的PR電流(Periodic Reverse電流)的電鍍法、使用了使電流密度降低的低電流密度的電鍍法等。 In the conductive substrate of the present embodiment, the surface roughness Ra of the surface of the metal layer facing the wet-type blackening layer is preferably 0.35 times or more the thickness of the wet-type blackening layer. In addition, as a method of setting the surface roughness Ra of the surface of the metal layer facing the wet blackened layer to a desired value, as described later, for example, a method of surface-treating the formed metal layer, A method of selecting sputtering conditions of the metal thin film layer, a method of selecting conditions for forming a metal plating layer, and the like. In addition, as a method of selecting the conditions for forming a metal plating layer, for example, it is used to supply the electrode to the electrode in the middle of film formation of the metal plating layer. A plating method of a PR current (Periodic Reverse Current) in which the direction of the current is reversed is used, and a plating method of a low current density for lowering the current density is used.

此外，根據對金屬鍍層成膜時的條件進行選擇的方法可知，不會增加製造導電性基板時的步驟數，尤其是可容易地使金屬鍍層表面的表面粗糙度Ra變為預期值。故，較佳為，採用對金屬鍍層成膜時的條件進行選擇的方法使金屬層表面的表面粗糙度Ra位於預定範圍內。為此，本實施方式的導電性基板的金屬層較佳具有金屬鍍層(濕式鍍金屬層)。 Further, according to the method of selecting the conditions for forming a metal plating layer, it is understood that the number of steps in manufacturing the conductive substrate is not increased, and in particular, the surface roughness Ra of the surface of the metal plating layer can be easily changed to an expected value. Therefore, it is preferred that the surface roughness Ra of the surface of the metal layer be within a predetermined range by selecting a condition for film formation of the metal plating layer. Therefore, the metal layer of the conductive substrate of the present embodiment preferably has a metal plating layer (wet metal plating layer).

對金屬層的厚度並無特別限定，在將金屬層使用為配線的情況下，可根據供給至該配線的電流的大小或配線的寬度等進行任意選擇。 The thickness of the metal layer is not particularly limited, and when the metal layer is used as a wiring, it can be arbitrarily selected depending on the magnitude of the current supplied to the wiring, the width of the wiring, and the like.

然而，如果金屬層較厚，則為了形成配線圖案而進行蝕刻時所需的時間較長，由此容易發生側蝕，存在發生難以形成細線等問題的情況。為此，金屬層的厚度較佳為5μm以下，優選為3μm以下。 However, if the metal layer is thick, the time required for etching to form a wiring pattern is long, and thus side etching is likely to occur, and there is a problem that it is difficult to form a thin line. For this reason, the thickness of the metal layer is preferably 5 μm or less, and preferably 3 μm or less.

此外，為了使金屬層的與濕式鍍黑化層相對的表面的表面粗糙度位於預定範圍內，進一步從減小導電性基板的電阻值以可充分進行電流供給的觀點來看，例如，金屬層的厚度較佳為50nm以上，優選為60nm以上，最佳為150nm以上。 Further, in order to make the surface roughness of the surface of the metal layer opposite to the wet blackened layer within a predetermined range, further, from the viewpoint of reducing the resistance value of the conductive substrate so that current supply can be sufficiently performed, for example, metal The thickness of the layer is preferably 50 nm or more, preferably 60 nm or more, and most preferably 150 nm or more.

需要說明的是，在金屬層如上所述具有金屬薄膜層和金屬鍍層的情況下，金屬薄膜層的厚度和金屬鍍層的厚度的合計優選位於上述範圍內。 In the case where the metal layer has the metal thin film layer and the metal plating layer as described above, the total thickness of the metal thin film layer and the thickness of the metal plating layer are preferably within the above range.

在金屬層由金屬薄膜層構成的情況下或由金屬薄膜層和金屬鍍層構成的情況下，都對金屬薄膜層的厚度並無特別限定，例如，較佳為50nm以上且500nm以下。 In the case where the metal layer is composed of a metal thin film layer or a metal thin film layer and a metal plating layer, the thickness of the metal thin film layer is not particularly limited, and is preferably, for example, 50 nm or more and 500 nm or less.

此外，在本實施方式的導電性基板中，金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra(μm)可為濕式鍍黑化層的厚度(μm)的0.35倍以上。 Further, in the conductive substrate of the present embodiment, the surface roughness Ra (μm) of the surface of the metal layer facing the wet-type blackening layer may be 0.35 times or more the thickness (μm) of the wet-type blackening layer. .

本發明的發明人對在將透明基材上配置了金屬層和濕式鍍黑化層的導電性基板蝕刻為預期配線圖案時導電性基板內無法進行均勻蝕刻的原因進行了銳意探討和研究。 The inventors of the present invention have intensively studied and studied the reason why the conductive substrate in the conductive substrate cannot be uniformly etched when the conductive substrate on which the metal layer and the wet blackened layer are disposed on the transparent substrate is etched into a desired wiring pattern.

其結果為，確認到了，在不能進行均勻蝕刻的導電性基板內，在導電性基板中的一部份處，蝕刻液進入了金屬層和濕式鍍黑化層之間。 As a result, it was confirmed that in a conductive substrate in which uniform etching was not possible, the etching liquid entered between the metal layer and the wet blackened layer at a part of the conductive substrate.

一般而言，濕式鍍黑化層與金屬層相比其相對於蝕刻液的反應性較低，故，在對金屬層和濕式鍍黑化層進行蝕刻所需的時間中，濕式鍍黑化層的蝕刻所需的時間占的比例較大。此外，如果如上所述蝕刻液進入了金屬層和濕式鍍黑化層之間，則進入了的蝕刻液也會從金屬層側對濕式鍍黑化層進行蝕刻，故，該部分與該蝕刻液沒有進入的部分相比，會被較快地進行蝕刻。為此，出現了導電性基板內無法進行均勻蝕刻的情況。需要說明的是，濕式鍍黑化層的厚度越厚，金屬層和濕式鍍黑化層之間進入了蝕刻液的部分和該部分以外的部分的蝕刻所需的時間差越大，越容易出現蝕刻不均。 In general, the wet blackened layer has a lower reactivity with respect to the etching liquid than the metal layer, so in the time required to etch the metal layer and the wet blackened layer, wet plating The time required for the etching of the blackening layer is large. Further, if the etching liquid enters between the metal layer and the wet blackening layer as described above, the entered etching liquid also etches the wet blackening layer from the metal layer side, so the portion and the The portion where the etchant does not enter is etched faster than the portion where the etchant does not enter. For this reason, there has been a case where uniform etching cannot be performed in the conductive substrate. It should be noted that the thicker the thickness of the wet blackened layer, the larger the time difference between the portion of the metal layer and the wet blackened layer that enters the etching liquid and the portion other than the portion, and the easier Uneven etching occurs.

因此，就本實施方式的導電性基板而言，其為一種金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra(μm)是濕式鍍黑化層的厚度(μm)的0.35倍以上的導電性基板，由此可藉由濕式鍍黑化層的厚度提高金屬層和濕式鍍黑化層之間的密著性，並且蝕刻均勻性也較優。 Therefore, in the conductive substrate of the present embodiment, the surface roughness Ra (μm) of the surface of the metal layer opposite to the wet blackened layer is the thickness (μm) of the wet-type blackened layer. With 0.35 times or more of the conductive substrate, the adhesion between the metal layer and the wet-type blackened layer can be improved by the thickness of the wet-type blackened layer, and the etching uniformity is also excellent.

需要說明的是，金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra如上所述盡管可被選擇為滿足與濕式鍍黑化層厚度之間的比值，然而，較佳為0.024μm以上，優選為0.030μm以上。其原因在於，藉由使金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra為0.024μm以上，尤其可抑制金屬層和濕式鍍黑化層之間的蝕刻液的進入。 It is to be noted that the surface roughness Ra of the surface of the metal layer opposite to the wet blackened layer may be selected to satisfy the ratio with the thickness of the wet blackened layer as described above, however, it is preferably 0.024 μm or more, preferably 0.030 μm or more. This is because the surface roughness Ra of the surface of the metal layer facing the wet blackened layer is set to be 0.024 μm or more, and in particular, the entry of the etching liquid between the metal layer and the wet blackened layer can be suppressed.

對金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra的上限值並無特別限定，然而，較佳為0.080μm以下，優選為0.060μm以下。其原因在於，如果金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra超過0.080μm，則存在不能均勻地對濕式鍍黑化層進行被覆的情況，可能會對濕式鍍黑化層的顏色產生不良影響。 The upper limit of the surface roughness Ra of the surface of the metal layer facing the wet blackened layer is not particularly limited. However, it is preferably 0.080 μm or less, and preferably 0.060 μm or less. The reason for this is that if the surface roughness Ra of the surface of the metal layer opposite to the wet blackened layer exceeds 0.080 μm, there is a case where the wet blackened layer cannot be uniformly coated, and wet plating may be applied. The color of the blackened layer has an adverse effect.

需要說明的是，表面粗糙度Ra在JIS B 0601(2013)中被規定為算術平均粗糙度。作為表面粗糙度Ra的測定方法，可採用觸針法或光學法等進行評價。 In addition, the surface roughness Ra is defined as arithmetic mean roughness in JIS B 0601 (2013). The measurement method of the surface roughness Ra can be evaluated by a stylus method, an optical method, or the like.

接著，對濕式鍍黑化層進行說明。 Next, the wet blackening layer will be described.

由於金屬層具有金屬光澤，故，如果在透明基材上僅形成藉由對金屬層進行蝕刻而獲得的配線，則金屬層會對光進行反射，在例如作為觸屏用配線基板而使用的情況下，存在顯示器的視認性下降的問題。因此，為了對金屬層表面的光反射進行抑制，在本實施方式的導電性基板的金屬層上可設置濕式鍍黑化層。 Since the metal layer has a metallic luster, when only the wiring obtained by etching the metal layer is formed on the transparent substrate, the metal layer reflects the light and is used as, for example, a wiring board for a touch panel. Next, there is a problem that the visibility of the display is degraded. Therefore, in order to suppress light reflection on the surface of the metal layer, a wet blackened layer can be provided on the metal layer of the conductive substrate of the present embodiment.

濕式鍍黑化層較佳為包括例如從Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn及Mn中所選擇的至少1種以上的金屬。此外，濕式鍍黑化層還可包括從碳、氧、氫及氮中所選擇的1種以上的元素。 The wet blackening layer preferably includes at least one metal selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Further, the wet blackening layer may further include one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen.

需要說明的是，濕式鍍黑化層也可包括含有從Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn及Mn中所選擇的至少2種以上的金屬的金屬合金。在此情況下，濕式鍍黑化層也還可包括從碳、氧、氫及氮中所選擇的1種以上的元素。此時，作為含有從Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn及Mn中所選擇的至少2種以上的金屬的金屬合金，較佳可使用Ni-Cu合金、Ni-Zn合金、Ni-Zn-Cu合金、Cu-Ti-Fe合金、Cu-Ni-Fe合金、Ni-Ti合金、Ni-W合金、Ni-Cr合金、Ni-Cu-Cr合金。 In addition, the wet blackening layer may include at least two or more selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Metal alloy of metal. In this case, the wet blackening layer may further include one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen. In this case, as the metal alloy containing at least two or more metals selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, Ni is preferably used. -Cu alloy, Ni-Zn alloy, Ni-Zn-Cu alloy, Cu-Ti-Fe alloy, Cu-Ni-Fe alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Ni-Cu-Cr alloy.

濕式鍍黑化層可藉由濕式鍍法進行成膜。 The wet blackened layer can be formed by wet plating.

在採用濕式鍍法對濕式鍍黑化層進行成膜的情況下，可根據濕式鍍黑化層的材料選擇鍍液，並可藉由例如電解鍍法進行成膜。 In the case where the wet black-plated layer is formed by wet plating, the plating solution can be selected according to the material of the wet-type blackening layer, and can be formed by, for example, electrolytic plating.

對濕式鍍黑化層的厚度並無特別限定，然而，例如較佳為40nm以上，優選為50nm以上。其原因在於，在濕式鍍黑化層的厚度較薄的情況下，存在不能充分抑制金屬層表面的光反射的情況，故，如上所述使濕式鍍黑化層的厚度為40nm以上，據此尤其可抑制金屬層表面的光反射，為較佳。 The thickness of the wet-type blackening layer is not particularly limited, and is, for example, preferably 40 nm or more, and preferably 50 nm or more. The reason for this is that when the thickness of the wet blackened layer is thin, the light reflection on the surface of the metal layer cannot be sufficiently suppressed. Therefore, the thickness of the wet blackened layer is 40 nm or more as described above. Accordingly, it is preferable to suppress light reflection on the surface of the metal layer.

對濕式鍍黑化層的厚度的上限值並無特別限定，然而，如果過厚，則成膜所需的時間或形成配線時所需的時間變長，會導致成本上昇。為此，濕式鍍黑化層的厚度較佳為80nm以下，優選為70nm以下。 The upper limit of the thickness of the wet-type blackening layer is not particularly limited. However, if it is too thick, the time required for film formation or the time required for forming wiring becomes long, which leads to an increase in cost. For this reason, the thickness of the wet blackened layer is preferably 80 nm or less, preferably 70 nm or less.

在本實施方式的導電性基板中，藉由配置濕式鍍黑化層，可如上所述抑制金屬層表面的光反射。為此，在例如使用於觸屏等的用途的情況下，可抑制顯示器的視認性的下降。 In the conductive substrate of the present embodiment, by disposing the wet-type blackening layer, light reflection on the surface of the metal layer can be suppressed as described above. For this reason, in the case of use, for example, in a touch panel or the like, it is possible to suppress a decrease in visibility of the display.

此外，在導電性基板上還可設置除了上述的透明基材、銅層 及濕式鍍黑化層之外的任意的層。例如，可設置密著層。 In addition, a transparent substrate or a copper layer other than the above may be disposed on the conductive substrate. And any layer other than the wet plating blackening layer. For example, a close layer can be provided.

對密著層的構成例進行說明。 A configuration example of the adhesion layer will be described.

如上所述金屬層可形成在透明基材上，然而，在透明基材上直接形成金屬層的情況下，存在透明基材和金屬層之間的密著性不充分的情況。為此，在透明基材的上表面直接形成金屬層的情況下，存在製造時或使用時金屬層會從透明基材剝離的情況。 Although the metal layer can be formed on the transparent substrate as described above, in the case where the metal layer is directly formed on the transparent substrate, the adhesion between the transparent substrate and the metal layer may be insufficient. For this reason, in the case where a metal layer is directly formed on the upper surface of the transparent substrate, there is a case where the metal layer is peeled off from the transparent substrate at the time of production or use.

因此，在本實施方式的導電性基板中，為了提高透明基材和金屬層之間的密著性，可在透明基材上配置密著層。 Therefore, in the conductive substrate of the present embodiment, in order to improve the adhesion between the transparent substrate and the metal layer, an adhesion layer may be disposed on the transparent substrate.

藉由在透明基材和金屬層之間配置密著層，可提高透明基材和金屬層之間的密著性，並可抑制金屬層從透明基材剝離。 By disposing an adhesive layer between the transparent substrate and the metal layer, the adhesion between the transparent substrate and the metal layer can be improved, and peeling of the metal layer from the transparent substrate can be suppressed.

此外，密著層還可發揮作為黑化層的功能。為此，也可對來自金屬層的下側即透明基材側的光所引起的金屬層表面的光反射進行抑制。 In addition, the adhesion layer can also function as a blackening layer. For this reason, light reflection from the surface of the metal layer caused by light from the lower side of the metal layer, that is, the transparent substrate side can be suppressed.

對構成密著層的材料並無特別限定，可根據與透明基材和金屬層之間的密著力或所要求的金屬層表面的光反射的抑制程度、及相對於導電性基板的使用環境(例如，濕度或溫度)的穩定性程度等進行任意選擇。 The material constituting the adhesion layer is not particularly limited, and may be based on the adhesion between the transparent substrate and the metal layer or the degree of suppression of light reflection on the surface of the metal layer, and the use environment of the conductive substrate ( For example, the degree of stability of humidity or temperature) is arbitrarily selected.

密著層較佳包括例如從Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn及Mn中所選擇的至少1種以上的金屬。此外，密著層也還可包括從碳、氧、氫及氮中所選擇的1種以上的元素。 The adhesion layer preferably includes, for example, at least one selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Further, the adhesion layer may further include one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen.

需要說明的是，密著層還可包括含有從Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn及Mn中所選擇的至少2種以上的金屬的 金屬合金。在此情況下，密著層也還可包括從碳、氧、氫及氮中所選擇的1種以上的元素。此時，作為含有從Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn及Mn中所選擇的至少2種以上的金屬的金屬合金，較佳可使用Ni-Cu合金、Ni-Zn合金、Ni-Zn-Cu合金、Cu-Ti-Fe合金、Cu-Ni-Fe合金、Ni-Ti合金、Ni-W合金、Ni-Cr合金、Ni-Cu-Cr合金等。 It should be noted that the adhesion layer may further include at least two or more metals selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Metal alloy. In this case, the adhesion layer may further include one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen. In this case, as the metal alloy containing at least two or more metals selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, Ni is preferably used. -Cu alloy, Ni-Zn alloy, Ni-Zn-Cu alloy, Cu-Ti-Fe alloy, Cu-Ni-Fe alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Ni-Cu-Cr Alloys, etc.

對密著層的成膜方法並無特別限定，然而，較佳採用乾式鍍法進行成膜。作為乾式鍍法，例如可較佳使用濺射法、離子鍍法、蒸鍍法等。在採用乾式鍍法對密著層進行成膜的情況下，從可容易對膜厚進行控制的角度來看，較佳使用濺射法。需要說明的是，在密著層中也可如上所述添加從碳、氧、氫及氮中所選擇的1種以上的元素，在此情況下，優選使用反應性濺射法。 The film formation method of the adhesion layer is not particularly limited, however, it is preferable to form a film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. When the adhesion layer is formed by a dry plating method, a sputtering method is preferably used from the viewpoint of easily controlling the film thickness. In addition, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the adhesion layer as described above. In this case, a reactive sputtering method is preferably used.

在採用濺射法對密著層進行成膜的情況下，作為靶材，可使用含有構成密著層的金屬的靶材。在密著層包括合金的情況下，可按照密著層中所包括的每種金屬來使用靶材，由此在基材等被成膜體的表面上形成合金，此外，也可使用預先對密著層中所包括的金屬進行了合金化的靶材。 When the adhesion layer is formed by a sputtering method, a target containing a metal constituting the adhesion layer can be used as the target. In the case where the adhesion layer includes an alloy, the target material may be used in accordance with each metal included in the adhesion layer, thereby forming an alloy on the surface of the film formation body or the like, and may also be used in advance. A target in which the metal included in the adhesion layer is alloyed.

此外，就含有從碳、氧、氫、氮中所選擇的1種以上的元素的密著層而言，可藉由在對密著層進行成膜時的環境氣體中事先添加含有所要添加的元素的氣體而進行成膜。例如，在要向密著層添加碳的情況下，可事先向進行乾式鍍時的環境氣體中添加一氧化碳氣體和/或二氧化碳氣體，在要向密著層添加氧的情況下，可事先向進行乾式鍍時的環境氣體中添加氧氣，在要向密著層添加氫的情況下，可事先向進行乾式鍍時的環境 氣體中添加氫氣和/或水，在要向密著層添加氮的情況下，可事先向進行乾式鍍時的環境氣體中添加氮氣。 In addition, the adhesion layer containing one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen can be added in advance to the ambient gas at the time of film formation on the adhesion layer. The film is formed by the gas of the element. For example, when carbon is to be added to the adhesion layer, carbon monoxide gas and/or carbon dioxide gas may be added to the ambient gas during dry plating in advance, and when oxygen is to be added to the adhesion layer, it may be carried out in advance. Oxygen is added to the ambient gas during dry plating, and when hydrogen is added to the adhesion layer, the environment can be dried in advance. When hydrogen and/or water is added to the gas, when nitrogen is to be added to the adhesion layer, nitrogen gas may be added to the ambient gas during dry plating in advance.

就含有從碳、氧、氫、氮中所選擇的1種以上的元素的氣體而言，優選將其添加至非活性氣體，以作為乾式鍍時的環境氣體。作為非活性氣體，對其並無特別限定，例如可優選使用氬氣。 A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas as an ambient gas during dry plating. The inert gas is not particularly limited, and for example, argon gas can be preferably used.

藉有對密著層如上所述採用乾式鍍法進行成膜，可提高透明基材和密著層之間的密著性。此外，就密著層而言，例如可包括金屬作為其主成分，故也可提高其與金屬層之間的密著性。為此，藉由在透明基材和金屬層之間配置密著層，可對金屬層的剝離進行抑制。 The adhesion between the transparent substrate and the adhesion layer can be improved by forming the adhesion layer by dry plating as described above. Further, in terms of the adhesion layer, for example, a metal may be included as its main component, so that the adhesion to the metal layer can be improved. For this reason, peeling of the metal layer can be suppressed by disposing an adhesive layer between the transparent substrate and the metal layer.

對密著層的厚度並無特別限定，例如較佳為3nm以上且50nm以下，優選為3nm以上且35nm以下，最佳為5nm以上且33nm以下。 The thickness of the adhesion layer is not particularly limited, and is, for example, preferably 3 nm or more and 50 nm or less, preferably 3 nm or more and 35 nm or less, and more preferably 5 nm or more and 33 nm or less.

在使密著層也發揮作為黑化層的功能的情況下，即，在也使其對金屬層的光反射進行抑制的情況下，密著層的厚度如上所述較佳為3nm以上，優選為5nm以上。 When the adhesion layer also functions as a blackening layer, that is, when the light reflection on the metal layer is also suppressed, the thickness of the adhesion layer is preferably 3 nm or more as described above. It is 5 nm or more.

對密著層的厚度的上限值並無特別限定，然而，如果過厚，則成膜所要的時間或形成配線時的蝕刻所要的時間變長，會導致成本上昇。為此，密著層的厚度如上所述較佳為50nm以下，優選為35nm以下，最佳為33nm以下。 The upper limit of the thickness of the adhesion layer is not particularly limited. However, if it is too thick, the time required for film formation or the time required for etching when wiring is formed becomes long, and the cost increases. Therefore, the thickness of the adhesion layer is preferably 50 nm or less, preferably 35 nm or less, and most preferably 33 nm or less as described above.

接著，對本實施方式的導電性基板的構成例進行說明。 Next, a configuration example of the conductive substrate of the present embodiment will be described.

如上所述，本實施方式的導電性基板可具備透明基材、金屬層及濕式鍍黑化層。 As described above, the conductive substrate of the present embodiment may include a transparent substrate, a metal layer, and a wet blackened layer.

下面參照圖1A、圖1B、圖2A、圖2B對具體構成例進行說 明。圖1A、圖1B、圖2A、圖2B示出了本實施方式的導電性基板的與透明基材、金屬層及濕式鍍黑化層的積層方向平行的面的斷面圖的例子。 Next, a specific configuration example will be described with reference to FIGS. 1A, 1B, 2A, and 2B. Bright. 1A, 1B, 2A, and 2B show an example of a cross-sectional view of a surface of the conductive substrate of the present embodiment which is parallel to the lamination direction of the transparent substrate, the metal layer, and the wet-type blackened layer.

例如，如圖1A所示的導電性基板10A那樣，可在透明基材11的一表面11a側依次對金屬層12和濕式鍍黑化層13進行各為一層的積層。 For example, as in the conductive substrate 10A shown in FIG. 1A, the metal layer 12 and the wet blackened layer 13 may be laminated one on another on the surface 11a side of the transparent substrate 11.

在圖1A所示的導電性基板10A中，可將金屬層12的與透明基材11相對的表面作為第1金屬層表面12a，並可將位於第1金屬層表面12a相反側的表面、即、金屬層12的與在金屬層12上配置的濕式鍍黑化層13相對的表面作為第2金屬層表面12b。 In the conductive substrate 10A shown in FIG. 1A, the surface of the metal layer 12 facing the transparent substrate 11 can be used as the first metal layer surface 12a, and the surface on the opposite side of the first metal layer surface 12a can be formed, that is, The surface of the metal layer 12 opposite to the wet blackened layer 13 disposed on the metal layer 12 serves as the second metal layer surface 12b.

此外，就第2金屬層表面12b而言，如上所述，其表面粗糙度Ra可被形成為與濕式鍍黑化層13的厚度具有預定的比例。 Further, as for the second metal layer surface 12b, as described above, the surface roughness Ra thereof may be formed to have a predetermined ratio with the thickness of the wet-type blackening layer 13.

此外，如圖1B所示的導電性基板10B那樣，還可在透明基材11的一表面11a側和另一個面(另一表面)11b側分別依次對金屬層121、122和濕式鍍黑化層131、132進行各為一層的積層。 Further, as in the conductive substrate 10B shown in FIG. 1B, the metal layers 121, 122 and the wet black plating may be sequentially applied to the one surface 11a side and the other surface (the other surface) 11b side of the transparent substrate 11, respectively. The layers 131 and 132 are laminated one by one.

在此情況下，就金屬層121、122而言，也可將與透明基材11相對的表面作為第1金屬層表面121a、122a，並將位於與第1金屬層表面121a，122a相反側的表面作為第2金屬層表面121b、122b。此外，就第2金屬層表面121b、122b而言，如上所述，其表面粗糙度Ra分別可被形成為與濕式鍍黑化層131、132的厚度具有預定的比例。 In this case, as for the metal layers 121 and 122, the surface facing the transparent substrate 11 may be the first metal layer surfaces 121a and 122a, and may be located on the opposite side to the first metal layer surfaces 121a and 122a. The surface serves as the second metal layer surfaces 121b and 122b. Further, as for the second metal layer surfaces 121b and 122b, as described above, the surface roughness Ra thereof may be formed to have a predetermined ratio with the thickness of the wet-type blackening layers 131 and 132, respectively.

此外，如上所述，在透明基材11和金屬層12之間還可具有密著層。 Further, as described above, there may be an adhesion layer between the transparent substrate 11 and the metal layer 12.

例如，如圖2A所示的導電性基板20A那樣，可在透明基材 11的一表面11a側依次對密著層14、金屬層12及濕式鍍黑化層13進行積層。在此情況下，也可將金屬層12的與透明基材11相對的表面作為第1金屬層表面12a，並可將位於與第1金屬層表面12a相反側的表面作為第2金屬層表面12b。此外，就第2金屬層表面12b而言，如上所述，其表面粗糙度Ra可被形成為與濕式鍍黑化層13的厚度具有預定的比例。 For example, as in the conductive substrate 20A shown in FIG. 2A, it can be on a transparent substrate. The adhesion layer 14, the metal layer 12, and the wet blackened layer 13 are laminated in this order on the one surface 11a side. In this case, the surface of the metal layer 12 facing the transparent substrate 11 may be referred to as the first metal layer surface 12a, and the surface on the opposite side to the first metal layer surface 12a may be used as the second metal layer surface 12b. . Further, as for the second metal layer surface 12b, as described above, the surface roughness Ra thereof may be formed to have a predetermined ratio with the thickness of the wet-type blackening layer 13.

此外，如圖2B所示的導電性基板20B那樣，還可在透明基材11的一表面11a側和另一個面(另一面)11b側分別對密著層141、14、金屬層121、122及濕式鍍黑化層131、132進行各為一層的積層。 Further, as in the conductive substrate 20B shown in FIG. 2B, the adhesion layers 141, 14, and the metal layers 121, 122 may be respectively formed on one surface 11a side and the other surface (other surface) 11b side of the transparent substrate 11. And the wet blackened layers 131 and 132 are laminated one by one.

在此情況下，就金屬層121、122而言，也可將與透明基材11相對的表面作為第1金屬層表面121a、122a，並可將位於第1金屬層表面121a、122a相反側的表面作為第2金屬層表面121b、122b。此外，就第2金屬層表面121b、122b而言，如上所述，其表面粗糙度Ra分別可被形成為與配置在金屬層上的濕式鍍黑化層131、132的厚度具有預定的比例。 In this case, as for the metal layers 121 and 122, the surface facing the transparent substrate 11 may be the first metal layer surfaces 121a and 122a, and may be located on the opposite side of the first metal layer surfaces 121a and 122a. The surface serves as the second metal layer surfaces 121b and 122b. Further, as for the second metal layer surfaces 121b and 122b, as described above, the surface roughness Ra thereof may be formed to have a predetermined ratio with the thickness of the wet blackened layers 131 and 132 disposed on the metal layer, respectively. .

需要說明的是，在圖1B、圖2B中，盡管示出了在透明基材的兩個表面上進行了金屬層和濕式鍍黑化層的積層的情況下，以透明基材11為對稱面，在透明基材11的上下進行了積層的層為對稱配置的例子，然而，並不限定於該形態。例如，在圖2B中，還可使透明基材11的一個面11a側的構成與圖1A的構成同樣地為依次對金屬層12和濕式鍍黑化層13進行了積層的形態，由此可使在透明基材11的上下進行了積層的層為非對稱構成。 It is to be noted that, in FIGS. 1B and 2B, in the case where the lamination of the metal layer and the wet blackening layer is performed on both surfaces of the transparent substrate, the transparent substrate 11 is symmetrical. In the surface, the layers which are laminated on the upper and lower sides of the transparent substrate 11 are arranged symmetrically, but are not limited to this embodiment. For example, in FIG. 2B, the configuration of the one surface 11a side of the transparent substrate 11 may be such that the metal layer 12 and the wet blackened layer 13 are laminated in this order, similarly to the configuration of FIG. 1A. The layer laminated on the upper and lower sides of the transparent substrate 11 can be asymmetrically formed.

本實施方式的導電性基板較佳可作為觸屏用導電性基板而使用。在此情況下，導電性基板可為具有網狀配線的構成。 The conductive substrate of the present embodiment is preferably used as a conductive substrate for a touch panel. In this case, the conductive substrate may have a configuration of a mesh wiring.

可藉由對至此所說明的本實施方式的導電性基板的金屬層和濕式鍍黑化層進行蝕刻來獲得具有網狀配線的導電性基板。 The conductive substrate having the mesh wiring can be obtained by etching the metal layer of the conductive substrate and the wet blackened layer of the conductive substrate of the present embodiment described above.

例如，可採用兩層配線形成網狀配線。具體構成例示於圖3。圖3示出了對具有網狀配線的導電性基板30從金屬層等的積層方向的上表面側進行觀察時的圖，為了容易理解配線圖案，藉由對透明基材11和金屬層進行圖案化而形成的配線311、312之外的層的圖示被進行了省略。此外，還示出了穿過透明基材11可看到的配線312。 For example, two layers of wiring can be used to form the mesh wiring. A specific configuration is shown in Fig. 3. FIG. 3 is a view showing a state in which the conductive substrate 30 having the mesh wiring is viewed from the upper surface side in the stacking direction of the metal layer or the like, and the transparent substrate 11 and the metal layer are patterned in order to easily understand the wiring pattern. The illustration of the layers other than the wirings 311 and 312 formed is omitted. In addition, wiring 312 visible through the transparent substrate 11 is also shown.

圖3所示的導電性基板30具有透明基材11、與圖中Y軸方向平行的複數個配線311及與X軸方向平行的配線312。需要說明的是，配線311、312藉由對金屬層進行蝕刻而形成，在該配線311、312的上表面或下表面上還形成了圖中未示的濕式鍍黑化層。此外，就濕式鍍黑化層而言，其較佳被蝕刻為，與透明基材11的配置了金屬層等的表面(以下記為「主表面」)平行的面的斷面形狀和配線311、312的與透明基材11的主表面平行的面的斷面形狀為相同形狀。 The conductive substrate 30 shown in FIG. 3 has a transparent substrate 11 and a plurality of wires 311 which are parallel to the Y-axis direction in the drawing and wires 312 which are parallel to the X-axis direction. It should be noted that the wirings 311 and 312 are formed by etching the metal layer, and a wet blackened layer (not shown) is formed on the upper surface or the lower surface of the wirings 311 and 312. In addition, the wet-type blackening layer is preferably etched into a cross-sectional shape and wiring of a surface parallel to a surface (hereinafter referred to as "main surface") of a transparent substrate 11 on which a metal layer or the like is disposed. The cross-sectional shape of the surface parallel to the main surface of the transparent substrate 11 of 311 and 312 has the same shape.

對透明基材11和配線311、312的配置並無特別限定。透明基材11和配線的配置的構成例示於圖4A、圖4B。圖4A、圖4B為沿圖3的A-A’線的斷面圖。 The arrangement of the transparent substrate 11 and the wirings 311 and 312 is not particularly limited. The configuration of the arrangement of the transparent substrate 11 and the wiring is shown in FIGS. 4A and 4B. 4A and 4B are cross-sectional views taken along line A-A' of Fig. 3.

首先，如圖4A所示，可在透明基材11的上下表面上分別配置配線311、312。需要說明的是，在圖4A中，在配線311的上表面和312的下表面上配置了濕式鍍黑化層321、322，其被蝕刻為，與透明基材11的主表面平行的面的斷面形狀與配線311、312具有相同的形狀。 First, as shown in FIG. 4A, wirings 311 and 312 can be disposed on the upper and lower surfaces of the transparent substrate 11, respectively. In addition, in FIG. 4A, wet blackened layers 321 and 322 are disposed on the upper surface of the wiring 311 and the lower surface of the 312, and are etched into a surface parallel to the main surface of the transparent substrate 11. The cross-sectional shape has the same shape as the wirings 311 and 312.

此外，如圖4B所示，也可使用1組透明基材111、112夾著 其中一個透明基材111在上下表面上配置配線311、312，並且，一個配線312配置在透明基材111、112之間。在此情況下，在配線311、312的上表面也配置了濕式鍍黑化層321、322，其被蝕刻為，與透明基材111的主表面平行的面的斷面形狀與配線311、312具有相同的形狀。 In addition, as shown in FIG. 4B, a set of transparent substrates 111, 112 may also be used. One of the transparent substrates 111 is provided with wirings 311 and 312 on the upper and lower surfaces, and one wiring 312 is disposed between the transparent substrates 111 and 112. In this case, wet plating black layers 321 and 322 are also disposed on the upper surfaces of the wirings 311 and 312, and are etched into a cross-sectional shape of the surface parallel to the main surface of the transparent substrate 111 and the wiring 311, 312 has the same shape.

需要說明的是，如上所述，本實施方式的導電性基板除了金屬層和濕式鍍黑化層之外還可具有密著層。為此，在圖4A和圖4B的任一情況下，例如可在配線311和/或配線312與透明基材11(111、112)之間設置密著層。在設置密著層的情況下，密著層也較佳被蝕刻為，與透明基材11(111、112)的主表面平行的面的斷面形狀與配線311、312具有相同的形狀。 In addition, as described above, the conductive substrate of the present embodiment may have an adhesion layer in addition to the metal layer and the wet-type blackening layer. For this reason, in any of the cases of FIGS. 4A and 4B, for example, an adhesion layer may be provided between the wiring 311 and/or the wiring 312 and the transparent substrate 11 (111, 112). In the case where the adhesion layer is provided, the adhesion layer is preferably etched so that the cross-sectional shape of the surface parallel to the main surface of the transparent substrate 11 (111, 112) has the same shape as the wirings 311, 312.

就具有圖3和圖4A所示的網狀配線的導電性基板而言，例如，可基於如圖1B那樣的在透明基材11的兩面具備金屬層121、122和濕式鍍黑化層131、132的導電性基板而形成。 For the conductive substrate having the mesh wiring shown in FIG. 3 and FIG. 4A, for example, the metal layers 121 and 122 and the wet blackened layer 131 may be provided on both surfaces of the transparent substrate 11 as shown in FIG. 1B. The conductive substrate of 132 is formed.

以使用圖1B的導電性基板來形成的情況為例進行說明，首先，對透明基材11的一個面11a側的金屬層121和濕式鍍黑化層131進行蝕刻，以使與圖1B中Y軸方向平行的複數個線狀圖案沿X軸方向被配置為隔開預定間隔。需要說明的是，圖1B中的X軸方向是指與各層的寬方向平行的方向。此外，圖1B中的Y軸方向是指與圖1B中的紙面垂直的方向。 The case where the conductive substrate of FIG. 1B is used will be described as an example. First, the metal layer 121 on one surface 11a side of the transparent substrate 11 and the wet blackened layer 131 are etched so as to be in FIG. 1B. A plurality of linear patterns parallel to the Y-axis direction are arranged to be spaced apart by a predetermined interval in the X-axis direction. It should be noted that the X-axis direction in FIG. 1B means a direction parallel to the width direction of each layer. Further, the Y-axis direction in Fig. 1B means a direction perpendicular to the plane of the paper in Fig. 1B.

之後，對透明基材11的另一面11b側的金屬層122和濕式鍍黑化層132進行蝕刻，以使與圖1B中X軸方向平行的複數個線狀圖案沿Y軸方向被配置為隔開預定間隔。 Thereafter, the metal layer 122 on the other surface 11b side of the transparent substrate 11 and the wet blackened layer 132 are etched so that a plurality of linear patterns parallel to the X-axis direction in FIG. 1B are arranged in the Y-axis direction as Separate by a predetermined interval.

藉由以上操作，可形成圖3和圖4A所示的具有網狀配線的 導電性基板。需要說明的是，也可同時對透明基材11的兩面進行蝕刻。即，可同時進行金屬層121、122和濕式鍍黑化層131、132的蝕刻。此外，就圖4A中的在配線311、312和透明基材11之間還具有被圖案化為形狀與配線311、312相同的密著層的導電性基板而言，還可使用圖2B所示的導電性基板20B來代替圖1B所示的導電性基板10B，並進行同樣的蝕刻，由此進行製作。 By the above operation, the mesh wiring having the mesh wiring shown in FIGS. 3 and 4A can be formed. Conductive substrate. It should be noted that both surfaces of the transparent substrate 11 may be simultaneously etched. That is, the etching of the metal layers 121 and 122 and the wet blackened layers 131 and 132 can be performed simultaneously. Further, as for the conductive substrate having the same adhesion layer as the wirings 311 and 312 patterned between the wirings 311 and 312 and the transparent substrate 11 in FIG. 4A, it is also possible to use the conductive substrate shown in FIG. 2B. The conductive substrate 20B is produced by replacing the conductive substrate 10B shown in FIG. 1B and performing the same etching.

就圖3所示的具有網狀配線的導電性基板而言，還可使用2個圖1A或圖2A所示的導電性基板進行形成。以使用2個圖1A的導電性基板來形成的情況為例進行說明，針對圖1A所示的2個導電性基板，分別對金屬層12和濕式鍍黑化層13進行蝕刻，以使與X軸方向平行的複數個線狀圖案沿Y軸方向被配置為隔開預定間隔。之後，調整2個導電性基板的方向並使其貼合，以使藉由上述蝕刻處理在各導電性基板上所形成的線狀圖案相互交差，由此可獲得具有網狀配線的導電性基板。對2個導電性基板貼合時的貼合面並無特別限定。例如，也可使進行了金屬層12等的積層的圖1A中的表面A和透明基材11的沒有進行金屬層12等的積層的圖1A中的另一表面11b相互貼合，由此獲得圖4B所示的結構。 The conductive substrate having the mesh wiring shown in FIG. 3 can also be formed using two conductive substrates shown in FIG. 1A or 2A. The case where two conductive substrates of FIG. 1A are used will be described as an example, and the metal layer 12 and the wet blackened layer 13 are respectively etched for the two conductive substrates shown in FIG. 1A so that A plurality of linear patterns parallel to the X-axis direction are arranged to be spaced apart by a predetermined interval in the Y-axis direction. Thereafter, the directions of the two conductive substrates are adjusted and bonded to each other so that the linear patterns formed on the respective conductive substrates by the etching treatment are inferior to each other, whereby a conductive substrate having mesh wiring can be obtained. . The bonding surface when the two conductive substrates are bonded together is not particularly limited. For example, the surface A in FIG. 1A in which the metal layer 12 or the like is laminated and the other surface 11b in FIG. 1A in which the laminate of the metal layer 12 or the like is not laminated may be bonded to each other, thereby obtaining The structure shown in Fig. 4B.

此外，例如，還可使透明基材11的沒有進行金屬層12等的積層的圖1A中的另一表面11b相互貼合，據此使斷面成為圖4A所示的結構。 Further, for example, the other surface 11b of FIG. 1A in which the laminated layer of the transparent substrate 11 is not subjected to the metal layer 12 or the like can be bonded to each other, whereby the cross section becomes the structure shown in FIG. 4A.

需要說明的是，就圖4A和圖4B中的在配線311、312和透明基材11(111、112)之間還具有形狀被圖案化為與配線311、312相同的密著層的導電性基板而言，也可使用圖2A所示的導電性基板20A代替圖1A所示的導電性基板10A來進行製作。 It should be noted that there is also a conductivity between the wirings 311, 312 and the transparent substrate 11 (111, 112) in FIGS. 4A and 4B that is patterned to be the same adhesion layer as the wirings 311, 312. The substrate may be fabricated by using the conductive substrate 20A shown in FIG. 2A instead of the conductive substrate 10A shown in FIG. 1A.

對圖3、圖4A、圖4B所示的具有網狀配線的導電性基板的配線寬度或配線間距並無特別限定，例如，可根據配線中所流動的電流量等進行選擇。 The wiring width or wiring pitch of the conductive substrate having the mesh wiring shown in FIG. 3, FIG. 4A, and FIG. 4B is not particularly limited, and may be selected according to, for example, the amount of current flowing through the wiring.

此外，在圖3、圖4A、圖4B中，盡管示出了對直線形狀的配線進行組合以形成網狀配線(配線圖案)的例子，然而，並不限定於該形態，即，構成配線圖案的配線還可為任意形狀。例如，為了不與顯示器的畫像之間產生干涉紋(moire)，構成網狀配線圖案的配線形狀可分別為彎曲成鋸齒狀的線(“之”字直線)等的各種形狀。 In addition, in FIGS. 3, 4A, and 4B, although an example in which linear wirings are combined to form a mesh wiring (wiring pattern) is shown, it is not limited to this configuration, that is, a wiring pattern is formed. The wiring can also be of any shape. For example, in order to prevent interference with the image of the display, the wiring shape constituting the mesh wiring pattern may be various shapes such as a line curved in a zigzag shape ("straight line").

根據以上所說明的本實施方式的導電性基板，不僅可藉由濕式鍍黑化層的厚度提高金屬層和濕式鍍黑化層之間的密著性，而且還可獲得蝕刻均勻性較優的導電性基板。 According to the conductive substrate of the present embodiment described above, not only the adhesion between the metal layer and the wet-type blackened layer can be improved by the thickness of the wet-type blackening layer, but also the etching uniformity can be obtained. Excellent conductive substrate.

(導電性基板的製造方法) (Method of Manufacturing Conductive Substrate)

接著，對本實施方式的導電性基板的製造方法的構成例進行說明。 Next, a configuration example of a method of manufacturing a conductive substrate of the present embodiment will be described.

本實施方式的導電性基板的製造方法可具有下面的步驟。 The method for producing a conductive substrate of the present embodiment may have the following steps.

在透明基材的至少一表面上形成金屬層的金屬層形成步驟。 A metal layer forming step of forming a metal layer on at least one surface of the transparent substrate.

在金屬層上採用濕式鍍法形成濕式鍍黑化層的濕式鍍黑化層形成步驟。 A wet blackening layer forming step of forming a wet blackened layer on the metal layer by wet plating.

此外，在金屬層形成步驟中，以金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra(μm)為濕式鍍黑化層的厚度(μm)的0.35倍以上的方式形成金屬層。需要說明的是，在濕式鍍黑化層形成步驟中，還可調整濕式鍍黑化層的厚度，以使金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra(μm)為濕式鍍黑化層的厚度(μm)的0.35倍以上。 Further, in the metal layer forming step, the surface roughness Ra (μm) of the surface of the metal layer facing the wet-type blackening layer is formed to be 0.35 times or more the thickness (μm) of the wet-type blackening layer. Metal layer. It should be noted that, in the wet blackening layer forming step, the thickness of the wet blackening layer may be adjusted so that the surface roughness Ra of the surface of the metal layer opposite to the wet blackening layer (μm) It is 0.35 times or more of the thickness (μm) of the wet blackened layer.

下面對本實施方式的導電性基板的製造方法進行說明，需要說明的是，就以下所說明的部分之外的部分而言，由於可被構成為與上述導電性基板時同樣的結構，故對其說明進行了省略。 Next, a method of manufacturing the conductive substrate of the present embodiment will be described. It is to be noted that the portion other than the portion described below can be configured to have the same structure as that of the above-described conductive substrate. The description has been omitted.

首先，對金屬層形成步驟進行說明。 First, the metal layer forming step will be described.

需要說明的是，可預先準備供金屬層形成步驟所使用的透明基材(透明基材準備步驟)。作為透明基材，如上所述例如可使用能使可視光透過的絕緣體薄膜或玻璃基板等，此外，根據需要還可預先將其切斷為任意尺寸等。需要說明的是，關於可較佳使用的能使可視光透過的絕緣體薄膜，由於已經在上面進行了敘述，故省略其說明。 In addition, the transparent substrate used for the metal layer formation step (transparent substrate preparation step) can be prepared in advance. As the transparent substrate, for example, an insulator film or a glass substrate through which visible light can be transmitted can be used as described above, and if necessary, it can be cut into an arbitrary size or the like as necessary. It should be noted that the insulator film which can be preferably used to transmit visible light has been described above, and thus the description thereof will be omitted.

此外，金屬層如上所述較佳具有金屬薄膜層。金屬層還可具有金屬薄膜層和金屬鍍層。為此，金屬層形成步驟可具有例如採用乾式鍍法形成金屬薄膜層的金屬薄膜層形成步驟。此外，金屬層形成步驟還可具有採用乾式鍍法形成金屬薄膜層的金屬薄膜層形成步驟、及以該金屬薄膜層為供電層並採用作為濕式鍍法的一種的電解鍍法形成金屬鍍層的金屬鍍層形成步驟。 Further, the metal layer preferably has a metal thin film layer as described above. The metal layer may also have a metal thin film layer and a metal plating layer. To this end, the metal layer forming step may have a metal thin film layer forming step of forming a metal thin film layer by, for example, dry plating. In addition, the metal layer forming step may further include a metal thin film layer forming step of forming a metal thin film layer by dry plating, and a metal plating layer formed by using the metal thin film layer as a power supply layer and using an electrolytic plating method as one of wet plating methods. Metal plating forming step.

如上所述，可僅採用乾式鍍法或組合使用乾式鍍法和濕式鍍法來形成金屬層，由此可在透明基材或密著層上不藉由接著劑而直接形成金屬層，故為較佳。 As described above, the metal layer can be formed only by dry plating or a combination of dry plating and wet plating, whereby the metal layer can be directly formed on the transparent substrate or the adhesion layer without using an adhesive. It is better.

作為在金屬薄膜層形成步驟中所使用的乾式鍍法，對其並無特別限定，例如，可使用蒸鍍法、濺射法或離子鍍法等。需要說明的是，作為蒸鍍法，較佳可使用真空蒸鍍法。作為在金屬薄膜層形成步驟中所使用的乾式鍍法，尤其從可容易進行膜厚控制的觀點來看，濺射法為較佳。 The dry plating method used in the step of forming the metal thin film layer is not particularly limited, and for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. In addition, as a vapor deposition method, a vacuum vapor deposition method is preferable. As the dry plating method used in the metal thin film layer forming step, a sputtering method is preferable from the viewpoint of easily controlling the film thickness.

此外，對在接著金屬鍍層形成步驟中採用濕式鍍法形成金屬鍍層時的條件、即、電解鍍處理的條件並無特別限定，採用常規方法中的諸條件即可。例如，可將形成了金屬薄膜層的基材放入具有金屬鍍液的鍍槽內，並對電流密度或基材搬送速度進行控制，據此可形成金屬鍍層。 In addition, the conditions for forming the metal plating layer by the wet plating method in the subsequent metal plating layer forming step, that is, the conditions of the electrolytic plating treatment are not particularly limited, and the conditions in the conventional method may be employed. For example, the substrate on which the metal thin film layer is formed can be placed in a plating bath having a metal plating solution, and the current density or the substrate transport speed can be controlled, whereby a metal plating layer can be formed.

然而，在本實施方式的導電性基板的製造方法中，就金屬層形成步驟中所形成的金屬層而言，其可具有與透明基材相對的第1金屬層表面及位於第1金屬層表面的相反側並與濕式鍍黑化層相對的第2金屬層表面。此外，第2金屬層表面的表面粗糙度Ra較佳為濕式鍍黑化層的厚度的0.35倍以上。 However, in the method for producing a conductive substrate of the present embodiment, the metal layer formed in the metal layer forming step may have a surface of the first metal layer opposite to the transparent substrate and a surface of the first metal layer The opposite side and the surface of the second metal layer opposite to the wet blackened layer. Further, the surface roughness Ra of the surface of the second metal layer is preferably 0.35 times or more the thickness of the wet-type blackened layer.

對使第2金屬層表面具有預期的表面粗糙度Ra的方法並無特別限定，可採用任意的方法。 The method for imparting the desired surface roughness Ra to the surface of the second metal layer is not particularly limited, and any method can be employed.

作為使第2金屬層表面具有預期表面粗糙度的方法，例如，可列舉出藉由對成膜了的金屬層的表面進行蝕刻、化學研磨或噴砂等以進行表面處理，據此獲得預期表面粗糙度的方法(以下也記為「對形成了金屬層進行表面處理的方法」)。在此情況下，本實施方式的導電性基板的製造方法在金屬層形成步驟之後還可具有對金屬層進行表面處理的表面處理步驟。 As a method of making the surface of the second metal layer have a desired surface roughness, for example, surface treatment is performed by etching, chemical polishing, sand blasting or the like of the surface of the formed metal layer, thereby obtaining desired surface roughness. The method of degree (hereinafter also referred to as "method of surface treatment for forming a metal layer"). In this case, the method of manufacturing the conductive substrate of the present embodiment may further have a surface treatment step of surface-treating the metal layer after the metal layer forming step.

此外，還可列舉出對金屬薄膜層成膜時的濺射條件進行選擇，據此使金屬薄膜層的最表面的表面粗糙度為預期表面粗糙度的方法(以下也記為「對金屬薄膜層的濺射條件進行選擇的方法」)。需要說明的是，在金屬層僅由金屬薄膜層構成的情況下，可對濺射條件進行選擇，以使金屬薄膜層的最表面具有金屬層的預期表面粗糙度。此外，在金屬層具有金 屬薄膜層和金屬鍍層的情況下，當在金屬薄膜層上進行金屬鍍層的成膜時，可對金屬薄膜層成膜時的濺射條件進行選擇，以使金屬鍍層的表面的表面粗糙度具有金屬層的預期表面粗糙度。 Further, a method of selecting a sputtering condition at the time of film formation of the metal thin film layer, and thereby making the surface roughness of the outermost surface of the metal thin film layer a desired surface roughness (hereinafter also referred to as "the metal thin film layer" The method of selecting the sputtering conditions"). It should be noted that in the case where the metal layer is composed only of the metal thin film layer, the sputtering conditions can be selected such that the outermost surface of the metal thin film layer has the desired surface roughness of the metal layer. In addition, there is gold in the metal layer In the case of a thin film layer and a metal plating layer, when the metal plating layer is formed on the metal thin film layer, the sputtering conditions at the time of film formation of the metal thin film layer can be selected so that the surface roughness of the surface of the metal plating layer has The expected surface roughness of the metal layer.

作為其他方法，在金屬層包括金屬薄膜層和金屬鍍層的情況下，可藉由對金屬鍍層成膜時的被覆(plating)條件進行選擇，以使第2金屬層表面具有預期表面粗糙度。 As another method, in the case where the metal layer includes the metal thin film layer and the metal plating layer, the plating conditions at the time of film formation of the metal plating layer may be selected such that the surface of the second metal layer has a desired surface roughness.

具體而言，例如，可列舉出在對金屬鍍層進行成膜的金屬鍍層形成步驟中，在後半的任意時機實施PR電流(Periodic Reverse電流)鍍，由此使金屬層的表面粗糙度成為預期表面粗糙度的方法(以下也記為「使用了PR電流的鍍法」)。PR電流鍍是在金屬鍍層成膜時使電流方向在任意時機反轉的鍍法，可使電流方向周期反轉。在PR電流鍍中，藉由使電流方向反轉，成膜了金屬鍍的一部分會發生溶解。據此，可容易地對金屬鍍層的表面粗糙度進行調整。 Specifically, for example, in the step of forming a metal plating layer for forming a metal plating layer, a PR current (Periodic Reverse Current) plating is applied at any timing in the second half, whereby the surface roughness of the metal layer becomes the intended surface. The method of roughness (hereinafter also referred to as "plating method using PR current"). The PR current plating is a plating method in which the current direction is reversed at any timing when the metal plating layer is formed, and the current direction period can be reversed. In the PR current plating, by reversing the direction of the current, a part of the metal plating is formed to dissolve. According to this, the surface roughness of the metal plating layer can be easily adjusted.

在此情況下，金屬鍍層形成步驟可具有：沿一定方向供給電流以進行初期金屬鍍層成膜的定方向電流金屬鍍層形成步驟；及在定方向電流金屬鍍層形成步驟之後，實施使電流方向周期反轉的PR電流鍍的PR電流金屬鍍層形成步驟。即，金屬層形成步驟可具有：金屬薄膜層形成步驟；定方向電流金屬鍍層形成步驟；及PR電流金屬鍍層形成步驟。 In this case, the metal plating forming step may have a step of forming a current in the direction of the initial metal plating to form a film, and a step of forming the current in the direction of the current metal plating step; The PR current plating of the PR current metal plating step is formed. That is, the metal layer forming step may have a metal thin film layer forming step, a directional current metal plating layer forming step, and a PR current metal plating layer forming step.

需要說明的是，可連續實施定方向電流金屬鍍層形成步驟和PR電流金屬鍍層形成步驟。 It should be noted that the directional current metal plating step and the PR current metal plating step may be continuously performed.

此外，定方向電流金屬鍍層形成步驟和PR電流金屬鍍層形成步驟較佳為在單一鍍槽中進行實施。其原因在於，藉由在單一鍍槽中進 行實施，可增大金屬層內的結晶，並可降低金屬層的電阻。 Further, the directional current metal plating forming step and the PR current metal plating forming step are preferably carried out in a single plating bath. The reason is that by entering in a single plating tank The row can be performed to increase the crystallinity in the metal layer and reduce the electrical resistance of the metal layer.

此外，作為其他方法，例如還可列舉出在對金屬鍍層進行成膜的金屬鍍層形成步驟中，在後半的任意時機，與一般被覆時相比可降低電流密度(Dk值)，並可在低電流密度條件下對金屬鍍層進行成膜的方法(以下也記為「使用了低電流密度的鍍法」)。藉由在低電流密度條件下對金屬鍍層進行成膜，由於與使電流密度降低之前相比，可使成膜了的金屬鍍層的表面粗化，故，藉由調整電流密度，可獲得預期的表面粗糙度。 Further, as another method, for example, in the step of forming a metal plating layer for forming a metal plating layer, at any timing in the second half, the current density (Dk value) can be lowered as compared with the case of general coating, and can be low. A method of forming a metal plating layer under current density conditions (hereinafter also referred to as "a plating method using a low current density"). By forming a film on the metal plating layer under a low current density condition, since the surface of the formed metal plating layer can be roughened as compared with before the current density is lowered, the current density can be adjusted to obtain the desired Surface roughness.

在此情況下，金屬鍍層形成步驟例如可具有在0.5A/dm2以上的電流密度的條件下對初期金屬鍍層進行成膜的初期金屬鍍層形成步驟、及在初期金屬鍍層形成步驟後，在0.1A/dm2以上且0.5A/dm2以下的電流密度的條件下對粗化金屬鍍層進行成膜的粗化金屬鍍層形成步驟。需要說明的是，在粗化金屬鍍層形成步驟中，電流密度較佳為0.1A/dm2以上且小於0.5A/dm2。此外，還可藉由初期金屬鍍層和粗化金屬鍍層構成金屬鍍層。 In this case, the metal plating layer forming step may have, for example, an initial metal plating layer forming step of forming an initial metal plating layer under a current density of 0.5 A/dm 2 or more, and a 0.1 step after the initial metal plating layer forming step. a / dm 2 or more and 0.5A / roughening the metal plating layer on the roughened metal plating film formation under conditions of a current density of less than 2 dm forming step. In addition, in the roughening metal plating layer forming step, the current density is preferably 0.1 A/dm 2 or more and less than 0.5 A/dm 2 . Further, the metal plating layer may be formed by the initial metal plating layer and the rough metal plating layer.

在此情況下，金屬層形成步驟可具有金屬薄膜層形成步驟、初期金屬鍍層形成步驟及粗化金屬鍍層形成步驟。 In this case, the metal layer forming step may have a metal thin film layer forming step, an initial metal plating layer forming step, and a rough metal plating layer forming step.

此外，就初期金屬鍍層形成步驟和粗化金屬鍍層形成步驟而言，在實施各步驟期間，電流密度並不需要保持一定，也可進行變化。 Further, in the initial metal plating layer forming step and the rough metal plating layer forming step, the current density does not need to be kept constant or may be changed during the execution of each step.

例如，在初期金屬鍍層形成步驟的情況下，步驟開始後，可使電流密度至到達目標電流密度為止逐漸上昇。就初期金屬鍍層形成步驟中的最大電流密度而言，較佳被設定為大于後述的粗化金屬鍍層形成步驟的電流密度。此外，就初期金屬鍍層形成步驟中的電流密度的上限值而言， 可根據所要求的金屬鍍層的厚度、電鍍處理槽的長度、鍍浴的耐電流密度性能等進行確定，盡管對其並無特別限定，然而，例如較佳為4A/dm2以下。 For example, in the case of the initial metal plating forming step, after the start of the step, the current density can be gradually increased until reaching the target current density. The maximum current density in the initial metal plating layer forming step is preferably set to be larger than the current density of the rough metal plating layer forming step to be described later. Further, the upper limit value of the current density in the initial metal plating layer forming step can be determined according to the required thickness of the metal plating layer, the length of the plating treatment bath, the current density resistance performance of the plating bath, and the like, although It is not particularly limited, however, for example, it is preferably 4 A/dm 2 or less.

此外，對粗化金屬鍍層形成步驟中的電流密度的控制也無特別限定，然而，例如可使所設定的粗化金屬鍍層形成步驟中的電流密度保持一定，由此進行金屬鍍層的成膜。 Further, the control of the current density in the step of forming the roughened metal plating layer is not particularly limited. However, for example, the current density in the step of forming the roughened metal plating layer can be kept constant, thereby forming a film of the metal plating layer.

需要說明的是，也可連續實施初期金屬鍍層形成步驟和粗化金屬鍍層形成步驟。在此情況下，例如在初期金屬鍍層形成步驟中，首先從開始時的開始時電流密度開始使電流密度上昇至作為目標的最大電流密度，由此進行初期金屬鍍層的成膜。接著，可在到達所設定的目標的最大電流密度之後立即、或保持預定時間之後，例如使電流密度下降至粗化金屬鍍層形成步驟中的設定電流密度，由此實施該粗化金屬鍍層形成步驟。 It should be noted that the initial metal plating layer forming step and the rough metal plating layer forming step may be continuously performed. In this case, for example, in the initial metal plating layer forming step, first, the current density is increased from the current density at the start of the start to the target maximum current density, whereby the initial metal plating layer is formed. Then, the roughened metal plating layer forming step may be performed immediately after reaching the maximum current density of the set target or after maintaining the predetermined time, for example, reducing the current density to the set current density in the rough metal plating forming step. .

此外，初期金屬鍍層形成步驟和粗化金屬鍍層形成步驟較佳在單一鍍槽內進行實施。其原因在於，藉由在單一鍍槽內進行實施，可增大金屬層內的結晶，並可降低金屬層的電阻。 Further, the initial metal plating forming step and the rough metal plating forming step are preferably carried out in a single plating tank. The reason for this is that by performing in a single plating tank, crystals in the metal layer can be increased, and the electrical resistance of the metal layer can be lowered.

以上，作為使第2金屬層表面具有預期表面粗糙度的方法，盡管列舉了對所形成的金屬層進行表面處理方法、對金屬薄膜層的濺射條件進行選擇的方法、使用了PR電流的鍍法、及使用了低電流密度的鍍法，然而，也可從這些方法中選擇任意一個方法進行實施。或者，還可選擇2個以上的方法並進行組合，據此來使第2金屬層表面具有預期表面粗糙度。 As described above, as a method of imparting a desired surface roughness to the surface of the second metal layer, a method of performing surface treatment on the formed metal layer, a method of selecting sputtering conditions of the metal thin film layer, and plating using PR current are cited. The method and the plating method using a low current density are used, but any one of these methods may be selected and implemented. Alternatively, two or more methods may be selected and combined, whereby the surface of the second metal layer has an intended surface roughness.

接著，對濕式鍍黑化層形成步驟進行說明。 Next, the wet plating black layer formation step will be described.

在濕式鍍黑化層形成步驟中，可採用濕式鍍法對濕式鍍黑化 層進行成膜。 In the wet blackening layer forming step, the wet plating may be black-coated by wet plating. The layer is formed into a film.

對採用濕式鍍法對濕式鍍黑化層進行成膜時的具體條件並無特別限定，可採用與濕式鍍黑化層的材料相應的鍍液並藉由例如電解鍍法來進行成膜。 The specific conditions for forming the wet blackened layer by wet plating are not particularly limited, and a plating solution corresponding to the material of the wet blackened layer may be used and formed by, for example, electrolytic plating. membrane.

在本實施方式的導電性基板的製造方法中，除了上述步驟之外，還可實施任意的步驟。 In the method for producing a conductive substrate of the present embodiment, in addition to the above steps, any step may be carried out.

例如，在透明基材和金屬層之間形成密著層的情況下，可在透明基材的形成金屬層的表面上實施形成密著層的密著層形成步驟。在實施密著層形成步驟的情況下，金屬層形成步驟可在密著層形成步驟之後實施，在金屬層形成步驟中，可在本步驟中在透明基材上形成了密著層的基材上形成金屬層。 For example, in the case where an adhesion layer is formed between the transparent substrate and the metal layer, an adhesion layer forming step of forming an adhesion layer may be performed on the surface of the transparent substrate on which the metal layer is formed. In the case where the adhesion layer forming step is performed, the metal layer forming step may be performed after the adhesion layer forming step, and in the metal layer forming step, the adhesion layer substrate may be formed on the transparent substrate in this step. A metal layer is formed thereon.

對密著層形成步驟中的密著層的成膜方法並無特別限定，較佳採用乾式鍍法進行成膜。作為乾式鍍法，例如較佳可採用濺射法、離子鍍法、蒸鍍法等。在對密著層採用乾式鍍法進行成膜的情況下，從可容易進行膜厚的控制的觀點來看，優選採用濺射法。在密著層中，如上所述，也可添加從碳、氧、氫、氮中所選擇的1種以上的元素，在此情況下，最佳採用反應性濺射法。 The film formation method of the adhesion layer in the adhesion layer formation step is not particularly limited, and it is preferably formed by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. When the adhesion layer is formed by dry plating, it is preferable to use a sputtering method from the viewpoint of easily controlling the film thickness. In the adhesion layer, as described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added. In this case, a reactive sputtering method is preferably employed.

需要說明的是，就金屬層、濕式鍍黑化層及密著層可較佳使用的材料或其較佳厚度等而言，由於在導電性基板中已經進行了敘述，故這裡省略其說明。 In addition, the material which can be preferably used for the metal layer, the wet blackened layer, and the adhesive layer, or the preferred thickness thereof, etc., have been described in the conductive substrate, and thus the description thereof is omitted here. .

藉由本實施方式的導電性基板的製造方法所獲得的導電性基板可使用於例如觸屏等各種用途。此外，在使用於各種用途的情況下， 本實施方式的導電性基板中所包括的金屬層和濕式鍍黑化層較佳被進行圖案化。需要說明的是，在設置密著層的情況下，密著層較佳也被進行圖案化。就金屬層、濕式鍍黑化層、有時還包括密著層在內而言，例如可被圖案化為預期的配線圖案，此外，就金屬層、濕式鍍黑化層、有時還包括密著層在內而言，較佳為被進行圖案化，以使與透明基材的主表面平行的面的斷面為相同形狀。 The conductive substrate obtained by the method for producing a conductive substrate of the present embodiment can be used for various applications such as a touch panel. In addition, when used for various purposes, The metal layer and the wet blackened layer included in the conductive substrate of the present embodiment are preferably patterned. It should be noted that in the case where the adhesion layer is provided, the adhesion layer is preferably patterned. For the metal layer, the wet blackening layer, and sometimes the adhesion layer, for example, it can be patterned into a desired wiring pattern, and in addition, a metal layer, a wet blackening layer, and sometimes Including the adhesion layer, it is preferably patterned so that the cross section of the surface parallel to the main surface of the transparent substrate has the same shape.

故，本實施方式的導電性基板的製造方法可具有對金屬層和濕式鍍黑化層進行圖案化的圖案化步驟。需要說明的是，在形成了密著層的情況下，圖案化步驟可為對密著層、金屬層及濕式鍍黑化層進行圖案化的步驟。 Therefore, the method for producing a conductive substrate of the present embodiment may have a patterning step of patterning the metal layer and the wet blackened layer. It should be noted that, in the case where the adhesion layer is formed, the patterning step may be a step of patterning the adhesion layer, the metal layer, and the wet blackened layer.

對圖案化步驟的具體步驟並無特別限定，可採用任意步驟進行實施。例如，在如圖1A那樣在透明基材11上對金屬層12和濕式鍍黑化層13進行了積層的導電性基板10A的情況下，首先，可實施在濕式鍍黑化層13的表面A上配置具有預期圖案的光阻(resist)的光阻配置步驟。然後，可實施向濕式鍍黑化層13的表面A、即、配置了光阻的表面側供給蝕刻液的蝕刻步驟。 The specific steps of the patterning step are not particularly limited and may be carried out in any step. For example, in the case of the conductive substrate 10A in which the metal layer 12 and the wet blackened layer 13 are laminated on the transparent substrate 11 as shown in FIG. 1A, first, it can be applied to the wet blackened layer 13 A photoresist arrangement step of having a resist of a desired pattern is disposed on the surface A. Then, an etching step of supplying an etching liquid to the surface A of the wet-type blackening layer 13, that is, the surface side on which the photoresist is disposed can be performed.

對蝕刻步驟中所使用的蝕刻液並無特別限定，可根據構成要進行蝕刻的層的材料進行任意選擇。例如，可按各層來改變蝕刻液，此外，還可使用相同蝕刻液同時對金屬層、濕式鍍黑化層、有時還包括密著層在內一起進行蝕刻。 The etching liquid used in the etching step is not particularly limited, and may be arbitrarily selected depending on the material constituting the layer to be etched. For example, the etching liquid may be changed for each layer, and the same etching liquid may be used to simultaneously etch the metal layer, the wet blackening layer, and sometimes the adhesion layer.

此外，就如圖1B那樣的在透明基材11的一表面11a和另一表面11b上進行了金屬層121、122和濕式鍍黑化層131、132的積層的導電 性基板10B而言，也可對其實施進行圖案化的圖案化步驟。在此情況下，例如可實施在濕式鍍黑化層131、132的表面A和表面B上配置具有預期圖案的光阻的光阻配置步驟。接著，可實施向濕式鍍黑化層131、132的表面A和表面B、即、配置了光阻的表面側供給蝕刻液的蝕刻步驟。 Further, a conductive layer of the metal layers 121, 122 and the wet blackened layers 131, 132 is formed on one surface 11a and the other surface 11b of the transparent substrate 11 as shown in Fig. 1B. For the substrate 10B, a patterning step of patterning may be performed. In this case, for example, a photoresist arrangement step of arranging a photoresist having a desired pattern on the surface A and the surface B of the wet-type blackening layers 131, 132 may be performed. Next, an etching step of supplying the etching liquid to the surface A and the surface B of the wet blackened layers 131 and 132, that is, the surface side on which the photoresist is disposed can be performed.

對在蝕刻步驟中所形成的圖案並無特別限定，可為任意形狀。例如，在圖1A所示的導電性基板10A的情況下，如上所述，可對金屬層12和濕式鍍黑化層13進行圖案化，以使其包括複數條直線或彎曲為鋸齒狀的線(“之”字直線)。 The pattern formed in the etching step is not particularly limited and may be any shape. For example, in the case of the conductive substrate 10A shown in FIG. 1A, as described above, the metal layer 12 and the wet blackened layer 13 may be patterned so as to include a plurality of straight lines or curved into a zigzag shape. Line ("the word" line).

此外，在圖1B所示的導電性基板10B的情況下，也可形成圖案以使金屬層121和金屬層122成為網狀配線。在此情況下，濕式鍍黑化層131和金屬層121較佳被進行圖案化，以使與透明基材11的一個表面11a平行的面的斷面形狀為同樣的形狀。此外，濕式鍍黑化層132和金屬層122也較佳被進行圖案化，以使與透明基材11的另一表面11b平行的面的斷面形狀為同樣的形狀。 Further, in the case of the conductive substrate 10B shown in FIG. 1B, a pattern may be formed such that the metal layer 121 and the metal layer 122 become mesh wiring. In this case, the wet blackened layer 131 and the metal layer 121 are preferably patterned such that the cross-sectional shape of the surface parallel to one surface 11a of the transparent substrate 11 has the same shape. Further, the wet blackening layer 132 and the metal layer 122 are also preferably patterned such that the cross-sectional shape of the surface parallel to the other surface 11b of the transparent substrate 11 has the same shape.

此外，例如在圖案化步驟中對上述的導電性基板10A實施了金屬層12等的圖案化之後，也可實施對被圖案化了的2個以上的導電性基板進行積層的積層步驟。在進行積層時，例如，藉由使各導電性基板的金屬層的圖案交差地進行積層，也可獲得具有網狀配線的積層導電性基板。 Further, for example, after the above-described conductive substrate 10A is patterned by the metal layer 12 or the like in the patterning step, a lamination step of laminating two or more patterned conductive substrates may be performed. When laminating, for example, a laminated conductive substrate having a mesh wiring can be obtained by laminating patterns of metal layers of the respective conductive substrates.

對積層了2個以上的導電性基板的固定方法並無特別限定，例如可採用接著劑等進行固定。 The fixing method of laminating two or more conductive substrates is not particularly limited, and for example, it may be fixed by an adhesive or the like.

根據藉由以上的本實施方式的導電性基板的製造方法所獲得的導電性基板，不僅可藉有濕式鍍黑化層的厚度提高金屬層和濕式鍍黑 化層之間的密著性，而且還可獲得蝕刻均勻性較優的導電性基板。 According to the conductive substrate obtained by the method for producing a conductive substrate of the present embodiment described above, the metal layer and the wet black plating can be improved not only by the thickness of the wet blackened layer. The adhesion between the layers is also obtained, and a conductive substrate having excellent etching uniformity can also be obtained.

【實施例】 [Examples]

下面根據具體實施例和比較例對本發明進行進一步詳細說明，需要說明的是，本發明並不限定於這些實施例。 The present invention will be further described in detail below based on the specific examples and comparative examples, and it should be noted that the present invention is not limited to these examples.

(評價方法) (evaluation method)

對下面的實驗例1~8中所製作的導電性基板的評價方法進行說明 The evaluation methods of the conductive substrates prepared in the following Experimental Examples 1 to 8 will be described.

(1)表面粗糙度Ra (1) Surface roughness Ra

在下面的實施例和比較例中，製作了圖2A所示的導電性基板。此外，當製作導電性基板時，在金屬層12成膜後且濕式鍍黑化層13成膜前，對金屬層12的第2金屬層表面12b的表面粗糙度進行了評價。 In the following examples and comparative examples, the conductive substrate shown in Fig. 2A was produced. Further, when a conductive substrate was produced, the surface roughness of the second metal layer surface 12b of the metal layer 12 was evaluated after the metal layer 12 was formed and before the wet blackened layer 13 was formed.

對表面粗糙度Ra採用形狀解析雷射(laser)顯微鏡(KEYENCE CORPORATION製；型號：VK-X150)進行了測定，並在表1中將其表示為Ra。 The surface roughness Ra was measured by a shape analysis laser microscope (manufactured by KEYENCE CORPORATION; model: VK-X150), and it is represented as Ra in Table 1.

此外，還計算了表面粗糙度Ra除以濕式鍍黑化層的厚度t的Ra/t。需要說明的是，厚度t不管在哪個實驗例中都為0.06μm(60nm)。 Further, Ra/t of the surface roughness Ra divided by the thickness t of the wet-type blackened layer was also calculated. It should be noted that the thickness t was 0.06 μm (60 nm) regardless of the experimental example.

(2)蝕刻時間差 (2) Etching time difference

作為蝕刻液，準備了3質量%的氯化鐵和0.3質量%的鹽酸的混合水溶液，並將蝕刻液的溫度保持在室溫(25℃)。 As the etching solution, a mixed aqueous solution of 3 mass% of ferric chloride and 0.3 mass% of hydrochloric acid was prepared, and the temperature of the etching solution was kept at room temperature (25 ° C).

接著，將寬度為40cm的各實驗例中所製作的導電性基板浸漬於蝕刻液。此時，在從導電性基板的濕式鍍黑化層13的表面13b側進行觀察的情況下，在導電性基板的寬度方向的兩個端部和寬度方向的中央部的3個點處，對進行使透明基材露出為止的溶解所要的時間(秒)進行了 計測。需要說明的是，這3個點位於沿寬度方向的同一直線上。然後，對這3個測定點處的溶解所要的時間進行比較，計算了最長時間和最短時間之間的差，並將該差作為蝕刻時間差(秒)。 Next, the conductive substrate produced in each of the experimental examples having a width of 40 cm was immersed in an etching liquid. In this case, when viewed from the side of the surface 13b of the wet-type blackening layer 13 of the conductive substrate, at the three end portions in the width direction of the conductive substrate and at the three points in the central portion in the width direction, The time (seconds) required for the dissolution of the transparent substrate to be exposed was carried out. Measurement. It should be noted that these three points are located on the same straight line in the width direction. Then, the time required for the dissolution at the three measurement points was compared, and the difference between the longest time and the shortest time was calculated, and the difference was taken as the etching time difference (second).

根據本發明的發明人的研究可知，當蝕刻時間差為6秒以下時，可形成預期的微細配線圖案，可稱為是一種蝕刻均勻性較優的導電性基板。為此，將蝕刻時間差在6秒以內的情況評價為○，即，合格。此外，將大于6秒的情況評價為×，即，不合格。 According to the study by the inventors of the present invention, when the etching time difference is 6 seconds or less, a desired fine wiring pattern can be formed, and it can be said that it is a conductive substrate having excellent etching uniformity. For this reason, the case where the etching time difference was within 6 seconds was evaluated as ○, that is, passed. Further, the case of more than 6 seconds was evaluated as ×, that is, failed.

(導電性基板的製作條件) (Production conditions of conductive substrate)

下面示出各實驗例的導電性基板的製作條件和評價結果。需要說明的是，實驗例1~實驗例5是實施例，而實驗例6~實驗例8則是比較例。 The production conditions and evaluation results of the conductive substrate of each experimental example are shown below. It should be noted that Experimental Examples 1 to 5 are examples, and Experimental Examples 6 to 8 are comparative examples.

〔實驗例1〕 [Experimental Example 1]

製作了具有圖2A所示結構的導電性基板。 A conductive substrate having the structure shown in Fig. 2A was produced.

(透明基材準備步驟和密著層形成步驟) (Transparent substrate preparation step and adhesion layer formation step)

首先，在厚度為100μm的PET製透明基材的一表面上形成了密著層。 First, an adhesion layer was formed on one surface of a PET transparent substrate having a thickness of 100 μm.

需要說明的是，針對作為透明基材而使用的PET製透明基材，採用JIS K 7361-1中所規定的方法對其可視光透過率進行了評價，其為97%。 In addition, the visible light transmittance of PET transparent base material used as a transparent base material was evaluated by the method prescribed by JIS K7361-1, and it was 97 %.

就密著層而言，對其採用含有70wt%的鎳和30wt%的銅的鎳銅合金的靶材並藉由濺射法進行了成膜。成膜時，將預先加熱至60℃以除去了水分的上述透明基材設置在濺射裝置的腔體內，在將腔體內排氣至1×10-4Pa以下之後，向腔體內導入含有30體積%的氧氣的氧-氬氣體，並使腔體內的壓力為0.3Pa。 In the case of the adhesion layer, a target of a nickel-copper alloy containing 70% by weight of nickel and 30% by weight of copper was used and film formation was carried out by a sputtering method. At the time of film formation, the transparent substrate which has been previously heated to 60 ° C to remove moisture is placed in the cavity of the sputtering apparatus, and after the chamber is evacuated to 1 × 10 -4 Pa or less, the liquid is introduced into the chamber. 5% by volume of oxygen-argon gas and a pressure in the chamber of 0.3 Pa.

之後，對靶材在該環境氣體下進行電力供給，由此在透明基材的一主表面上進行了厚度為20nm的由含有氧的Ni-Cu合金所構成的密著層的成膜。 Thereafter, electric power was supplied to the target under the atmosphere, whereby a film of an adhesion layer made of an oxygen-containing Ni-Cu alloy having a thickness of 20 nm was formed on one main surface of the transparent substrate.

(金屬層形成步驟) (metal layer forming step)

接著，在進行了密著層的成膜的透明基材的密著層上對金屬層進行了成膜。 Next, the metal layer was formed on the adhesion layer of the transparent substrate on which the adhesion layer was formed.

金屬層藉由實施金屬薄膜層形成步驟、初期金屬鍍層形成步驟及粗化金屬鍍層形成步驟而被進行了成膜。下面對各步驟進行說明。 The metal layer is formed into a film by performing a metal thin film layer forming step, an initial metal plating layer forming step, and a rough metal plating layer forming step. Each step will be described below.

就金屬薄膜層而言，作為靶材使用了銅靶材，並在對腔體內進行了排氣後，除了不導入氧-氬氣體而導入了氬氣這點之外，與形成密著層時同樣地，在密著層的上表面進行了厚度為80nm的作為金屬薄膜層的銅薄膜層的成膜。 In the case of the metal thin film layer, a copper target is used as a target, and after the cavity is exhausted, an argon gas is introduced without introducing an oxy-argon gas, and when an adhesion layer is formed. Similarly, a film of a copper thin film layer as a metal thin film layer having a thickness of 80 nm was formed on the upper surface of the adhesion layer.

就初期金屬鍍層形成步驟和粗化金屬鍍層形成步驟而言，將在透明基材上形成了密著層和金屬薄膜層的基材供給至金屬鍍槽內，並在單一鍍槽中連續地進行了實施。 In the initial metal plating forming step and the rough metal plating forming step, the substrate on which the adhesion layer and the metal thin film layer are formed on the transparent substrate is supplied into the metal plating tank, and is continuously performed in a single plating tank. Implemented.

作為鍍液，使用添加了DDAC(diallyl dimethyl ammonium chloride)-SO2共聚物的銅鍍液。具體而言，使用了將銅、硫酸及氯的濃度調製為銅為30g/L、硫酸為80g/L、及氯為50mg/L的銅鍍液。在所使用的銅鍍液中，作為添加劑，添加了20mg/L的上述的DDAC-SO2共聚物。此外，在鍍液中除了DDAC-SO2共聚物之外還添加了650mg/L的作為聚合物成分的PEG(polyethylene glycol)和15mg/L的作為增白劑(brightener)成分的SPS(bis-(3-Sulfopropyl)disulfide)。在下面的初期金屬鍍層形成步驟 和粗化金屬鍍層形成步驟中，鍍液被調整至30℃並進行了使用。 As the plating solution, a copper plating solution to which a DDAC (diallyl dimethyl ammonium chloride)-SO 2 copolymer was added was used. Specifically, a copper plating solution having a concentration of copper, sulfuric acid, and chlorine of 30 g/L of copper, 80 g/L of sulfuric acid, and 50 mg/L of chlorine was used. In the copper plating solution to be used, 20 mg/L of the above DDAC-SO 2 copolymer was added as an additive. Further, in addition to the DDAC-SO 2 copolymer, 650 mg/L of PEG (polyethylene glycol) as a polymer component and 15 mg/L of SPS as a brightener component were added to the plating solution (bis- (3-Sulfopropyl) disulfide). In the following initial metal plating forming step and roughening metal plating forming step, the plating solution was adjusted to 30 ° C and used.

接著，首先，作為初期金屬鍍層形成步驟，從電流密度為0.5A/dm2開始，隨著鍍層厚度的增加，將電流密度提昇至2.0A/dm2，並保持2分鐘後，結束初期金屬鍍層形成步驟。 Next, as an initial metal plating layer forming step, starting from a current density of 0.5 A/dm 2 , the current density is increased to 2.0 A/dm 2 as the thickness of the plating layer is increased, and after 2 minutes, the initial metal plating layer is terminated. Forming steps.

接著，使電流密度為0.3A/dm2，由此實施粗化金屬鍍層形成步驟。粗化金屬鍍層形成步驟的時間為0.5分鐘。 Next, the current density was set to 0.3 A/dm 2 , thereby performing a rough metal plating layer forming step. The time for roughening the metal plating forming step was 0.5 minutes.

需要說明的是，藉由實施金屬鍍層形成步驟和粗化金屬鍍層形成步驟，作為金屬鍍層，形成了厚度為0.5μm的銅鍍層。故，作為金屬層，形成了銅薄膜層和銅鍍層的合計厚度為0.58μm的銅層。 In addition, a copper plating layer having a thickness of 0.5 μm was formed as a metal plating layer by performing a metal plating layer forming step and a rough metal plating layer forming step. Therefore, as the metal layer, a copper layer having a total thickness of the copper thin film layer and the copper plating layer of 0.58 μm was formed.

在實施了金屬層形成步驟後並在實施濕式鍍黑化層形成步驟前，採用如上所述的方法，對第2金屬層表面的表面粗糙度進行了評價。其結果示於表1。 After the metal layer forming step was carried out and before the wet blackening layer forming step was carried out, the surface roughness of the surface of the second metal layer was evaluated by the method described above. The results are shown in Table 1.

(濕式鍍黑化層形成步驟) (wet blackening layer forming step)

使用含有硫酸鎳和硫酸鋅的鍍浴並採用濕式鍍法，作為濕式鍍黑化層，進行了厚度t為60nm的鎳鋅合金層的成膜。 A nickel-zinc alloy layer having a thickness t of 60 nm was formed as a wet-type blackening layer by a wet plating method using a plating bath containing nickel sulfate and zinc sulfate.

〔實驗例2~實驗例8〕 [Experimental Example 2 to Experimental Example 8]

在各實驗例中，除了對實施粗化金屬鍍層形成步驟的時間進行了變更，並使金屬層的與濕式鍍黑化層相對的表面的表面粗糙度Ra為表1所示的值之外，皆與實驗例1同樣地進行了導電性基板的製作和評價。其結果示於表1。 In each of the experimental examples, the time for performing the rough metal plating layer forming step was changed, and the surface roughness Ra of the surface of the metal layer facing the wet blackened layer was set to the value shown in Table 1. The production and evaluation of the conductive substrate were carried out in the same manner as in Experimental Example 1. The results are shown in Table 1.

由表1所示結果可知，在作為實施例的、作為金屬層的與濕式鍍黑化層相對的表面的第2金屬層表面的表面粗糙度Ra(μm)為濕式鍍黑化層的厚度(μm)的0.35倍以上的實驗例1~實驗例5中，可確認到評價為○。即，可確認到其為蝕刻均勻性較優的導電性基板。 As is clear from the results shown in Table 1, the surface roughness Ra (μm) of the surface of the second metal layer on the surface of the metal layer opposite to the wet blackened layer as the metal layer was a wet blackened layer. In Experimental Example 1 to Experimental Example 5 of 0.35 times or more of the thickness (μm), it was confirmed that the evaluation was ○. That is, it was confirmed that it is a conductive substrate having excellent etching uniformity.

然而，在作為比較例的、作為金屬層的與濕式鍍黑化層相對的表面的第2金屬層表面的表面粗糙度Ra(μm)為小於濕式鍍黑化層的厚度(μm)的0.35倍的實驗例6~實驗例8中，可確認到評價為×。故，就在實驗例6~實驗例8中所製作的導電性基板而言，其為不具有蝕刻均勻性的導電性基板，存在形成配線圖案時不能獲得預期形狀的情況。 However, the surface roughness Ra (μm) of the surface of the second metal layer as the surface of the metal layer opposite to the wet blackened layer as the comparative example is smaller than the thickness (μm) of the wet blackened layer. In 0.35 times of Experimental Example 6 to Experimental Example 8, it was confirmed that the evaluation was ×. Therefore, the conductive substrate produced in Experimental Example 6 to Experimental Example 8 is a conductive substrate having no etching uniformity, and a desired shape cannot be obtained when a wiring pattern is formed.

以上儘管基於實施方式及實施例等對導電性基板進行了說明，然而，本發明並不限定於上述實施方式及實施例等。在請求專利範圍 內記載的本發明的要旨的範圍內，還可進行各種各樣的變形和變更。 Although the conductive substrate has been described above based on the embodiments and the examples, the present invention is not limited to the above-described embodiments, examples, and the like. Request for patent Various modifications and changes can be made without departing from the spirit and scope of the invention.

本申請主張基於2016年4月5日向日本國專利廳申請的特願2016-076157號的優先權，並將特願2016-076157號的全部內容引用於本國際申請。 The present application claims priority to Japanese Patent Application No. 2016-076157, the entire disclosure of which is hereby incorporated by reference.

10A‧‧‧導電性基板 10A‧‧‧Electrically conductive substrate

11‧‧‧透明基材 11‧‧‧Transparent substrate

12‧‧‧金屬層 12‧‧‧metal layer

13‧‧‧濕式鍍黑化層 13‧‧‧ Wet blackening layer

11a‧‧‧一表面 11a‧‧‧ a surface

11b‧‧‧另一表面 11b‧‧‧Other surface

12a‧‧‧第1金屬層表面 12a‧‧‧1st metal layer surface

12b‧‧‧第2金屬層表面 12b‧‧‧2nd metal layer surface

A‧‧‧表面 A‧‧‧ surface

X、Y‧‧‧X、Y軸 X, Y‧‧‧X, Y-axis

Claims (3)

一種導電性基板，其具有：透明基材；金屬層，配置在該透明基材的至少一表面上；及濕式鍍黑化層，配置在該金屬層上，其中，該金屬層的與該濕式鍍黑化層相對的表面的表面粗糙度Ra(μm)為該濕式鍍黑化層的厚度(μm)的0.35倍以上。 A conductive substrate having: a transparent substrate; a metal layer disposed on at least one surface of the transparent substrate; and a wet black-plated layer disposed on the metal layer, wherein the metal layer The surface roughness Ra (μm) of the surface of the wet blackened layer is 0.35 times or more the thickness (μm) of the wet blackened layer. 根據申請專利範圍第1項之導電性基板，其中，該金屬層具有金屬鍍層。 The conductive substrate according to claim 1, wherein the metal layer has a metal plating layer. 根據申請專利範圍第1或第2項之導電性基板，其中，該金屬層的與該濕式鍍黑化層相對的表面的表面粗糙度Ra為0.024μm以上。 The conductive substrate according to the first or second aspect of the invention, wherein the surface of the metal layer facing the wet blackened layer has a surface roughness Ra of 0.024 μm or more.
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